National Library of Energy BETA

Sample records for llc al ga

  1. GA-AL-SC | Department of Energy

    Energy Savers [EERE]

    GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E

  2. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  3. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  4. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  5. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  6. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: Biedermann, Laura Butler ; Kaplar, Robert James ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2012-10-01 OSTI Identifier: 1111316 Report Number(s):

  7. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Conference: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: DasGupta, Sandeepan ; Biedermann, Laura Butler ; Kaplar, Robert ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2013-02-01 OSTI Identifier:

  8. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240350?nm emission

    SciTech Connect (OSTI)

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240350?nm range with internal quantum efficiencies around 30%.

  9. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  10. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  11. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  12. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  13. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  14. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  15. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  16. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  17. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  18. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  19. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  20. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

    SciTech Connect (OSTI)

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramn; Mita, Seiji; Tweedie, James

    2015-06-08

    Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGaN and AlGaN-based laser structures were studied over the whole composition range, as well as various strain states, quantum confinements, and carrier densities. A quantitative relationship between the theoretical valence band separation, determined using kp theory, and the experimentally measured degree of polarization is presented. Next to composition, strain was found to have the largest influence on the degree of polarization while all other factors were practically insignificant. The lowest crossover point from the transverse electric to transverse magnetic polarized emission of 245?nm was found for structures pseudomorphically grown on AlN substrates. This finding has significant implications toward the efficiency and feasibility of surface emitting devices below this wavelength.

  1. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  2. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  3. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  4. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  5. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  6. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  7. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  8. Relaxation of compressively strained AlGaN by inclined threading

    Office of Scientific and Technical Information (OSTI)

    dislocations. (Journal Article) | SciTech Connect Journal Article: Relaxation of compressively strained AlGaN by inclined threading dislocations. Citation Details In-Document Search Title: Relaxation of compressively strained AlGaN by inclined threading dislocations. Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of Al{sub x}Ga{sub 1?x}N(x = 0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by

  9. Effect of Al-mole fraction in Al{sub x}Ga{sub 1?x}N grown by MOCVD

    SciTech Connect (OSTI)

    Jayasakthi, M. Ramesh, R. Prabakaran, K. Loganathan, R. Kuppulingam, B. Balaji, M. Arivazhagan, P. Sankaranarayanan, S. Singh, Shubra Baskar, K.

    2014-04-24

    AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The Al{sub x}Ga{sub 1?x}N layer composition was varied from 15% to 25%. The crystalline quality, thickness and aluminum (Al) composition of AlGaN were determined using high resolution X-ray diffraction (HRXRD). The growth rate decreases on increasing Al composition. Reciprocal space mapping (RSM) was used to estimate the strain and relaxation between AlGaN and AlN. The optical properties of AlGaN layers were investigated by room temperature Photoluminescence (PL). The AlGaN peak shifts towards lower wavelength with Al composition. The surface morphology of AlGaN was studied by atomic force microscopy (AFM). Root mean square (RMS) roughness values were found to be increased in AlGaN layers with composition.

  10. ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub

    Office of Scientific and Technical Information (OSTI)

    x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect (Journal Article) | SciTech Connect ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect Citation Details In-Document Search Title: ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect This paper presents a study of the

  11. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  12. Structure and magnetic properties of Ce?(Ni/Al/Ga)??A new phase with the La?Al?? structure type

    SciTech Connect (OSTI)

    Janka, Oliver; Shang, Tian; Baumbach, Ryan E.; Bauer, Eric D.; Thompson, Joe D.; Kauzlarich, Susan M.

    2015-03-01

    Single crystals of Ce?(Ni/Al/Ga)?? were obtained from an Al flux reaction. Single crystals of the title compound crystallizing in the orthorhombic space group Immm (No. 71, Z = 2) with a = 436.38(14), b = 1004.5(3) and c = 1293.4(4) pm. This is a standardized unit cell of the previously published La?Al?? structure type. Wavelength dispersive microprobe provides the composition of Ce?.?????Ni?.?????Al?.?????Ga?.?????. Single crystal refinement provides the composition Ce?Ni?.??Al?.??Ga?.?? with substitution of the Ni and Ga on the Al1 and Al4 sites with the Al2 and Al3 solely occupied by Al. Magnetic susceptibility measurements reveal antiferromagnetic ordering with TN = 4.8 K and there is no evidence for a ferromagnetic ordering that has been reported for Ce?Al??. The effective magnetic moment was found to be ?eff = 1.9?B/Ce, which is lower than the expected value for trivalent Ce (2.54?B/Ce).

  13. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  14. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    SciTech Connect (OSTI)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300?nm GaN/ 200?nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8??10{sup 12} to 2.1 10{sup 13} cm{sup ?2} as the AlN barrier thickness increased from 2.2 to 4.5?nm, while a 4.5?nm AlN barrier would result to 3.1??10{sup 13} cm{sup ?2} on a GaN buffer layer. The 3.0?nm AlN barrier structure exhibited the highest 2DEG mobility of 900?cm{sup 2}/Vs for a density of 1.3??10{sup 13} cm{sup ?2}. The results were also confirmed by the performance of 1??m gate-length transistors. The scaling of AlN barrier thickness from 1.5?nm to 4.5?nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63?A/mm. The maximum drain-source current was 1.1?A/mm for AlN barrier thickness of 3.0?nm and 3.7?nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0?nm AlN barrier.

  15. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect (OSTI)

    Guo, Wei Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramn; Sitar, Zlatko; Xie, Jinqiao; Mita, Seiji; Gerhold, Michael

    2014-03-14

    Optical gain spectra for ?250?nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150?kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8?nm without a cavity. The DH and MQW structures showed gain values of 5060?cm{sup ?1} when pumped at 1?MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280?nm laser diodes.

  16. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    SciTech Connect (OSTI)

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramn; Xie, Jinqiao; Mita, Seiji

    2015-04-06

    The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ?80% at a carrier density of 10{sup 18?}cm{sup ?3} was achieved at ?258?nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.

  17. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.626.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  18. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

    SciTech Connect (OSTI)

    Schmid, A. Schroeter, Ch.; Otto, R.; Heitmann, J.; Schuster, M.; Klemm, V.; Rafaja, D.

    2015-02-02

    Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9??10{sup ?6} ? cm{sup 2} was achieved at an annealing temperature of 650?C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150?K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

  19. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect (OSTI)

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??AlInGaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  20. Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH{sub 3}-molecular beam epitaxy

    SciTech Connect (OSTI)

    Fireman, Micha N.; Browne, David A.; Mazumder, Baishakhi; Speck, James S.; Mishra, Umesh K.

    2015-05-18

    The results of vertical transport through nitride heterobarrier structures grown by ammonia molecular beam epitaxy are presented. Structures are designed with binary layers to avoid the effects of random alloy fluctuations in ternary nitride barriers. The unintentional incorporation of Ga in the AlN growth is investigated by atom probe tomography and is shown to be strongly dependent on both the NH{sub 3} flowrate and substrate temperature growth parameters. Once nominally pure AlN layer growth conditions are achieved, structures consisting of unintentionally doped (UID) GaN spacer layers adjacent to a nominally pure AlN are grown between two layers of n+ GaN, from which isotype diodes are fabricated. Varying the design parameters of AlN layer thickness, UID spacer layer thickness, and threading dislocation density show marked effects on the vertical transport characteristics of these structures. The lack of significant temperature dependence, coupled with Fowler-Nordheim and/or Milliken-Lauritsen analysis, point to a prevalently tunneling field emission mechanism through the AlN barrier. Once flatband conditions in the UID layer are achieved, electrons leave the barrier with significant energy. This transport mechanism is of great interest for applications in hot electron structures.

  1. Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

    SciTech Connect (OSTI)

    Hu, J. Groeseneken, G.; Stoffels, S.; Lenci, S.; Venegas, R.; Decoutere, S.; Bakeroot, B.

    2015-02-23

    This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5?V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ?{sub B} increase) together with R{sub ON} degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

  2. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Toms

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related specieshydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  3. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

    SciTech Connect (OSTI)

    Tracy, Lisa A; Reno, John L.; Hargett, Terry W.

    2015-09-01

    Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

  4. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  5. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  6. Attachment to Modification M067 BWXT Pantex, LLC Contract No. DE-AC04-00AL66620

    National Nuclear Security Administration (NNSA)

    M067 BWXT Pantex, LLC Contract No. DE-AC04-00AL66620 PX-SEC-J (6-24-04).doc J-App. E-1 PART III - LIST OF DOCUMENTS, EXHIBITS, AND OTHER ATTACHMENTS SECTION J - LIST OF ATTACHMENTS APPENDIX E - LIST OF APPLICABLE DIRECTIVES June 24, 2004 Pursuant to the contract clause entitled "Laws, Regulations, and DOE Directives," the following list of Directives is applicable to this contract. Environmental, Safety, and Health (ES&H) requirements for work conducted under this contract have

  7. Attachment to Modification M125 BWXT Pantex, LLC Contract No. DE-AC04-00AL66620

    National Nuclear Security Administration (NNSA)

    M125 BWXT Pantex, LLC Contract No. DE-AC04-00AL66620 PX-SEC-J (01/16/07) J-App. E-1 PART III - LIST OF DOCUMENTS, EXHIBITS, AND OTHER ATTACHMENTS SECTION J - LIST OF ATTACHMENTS APPENDIX E - LIST OF APPLICABLE DIRECTIVES January 16, 2007 Pursuant to the contract clause entitled "Laws, Regulations, and DOE Directives," the following list of directives is applicable to this contract. Environmental, Safety, and Health (ES&H) requirements for work conducted under this contract have

  8. Modification No. M081 BWXT Pantex, LLC Contract No. DE-AC04-00AL66620

    National Nuclear Security Administration (NNSA)

    1 BWXT Pantex, LLC Contract No. DE-AC04-00AL66620 Page 2 of 4 1. This modification deletes Appendix D entitled, "Key Personnel," dated August 23, 2004, that is currently in Section J of the Contract and replaces it with Attachment 1, Appendix D entitled, "Key Personnel," dated December 23, 2004, of this Modification. 2. This modification deletes Contract Clause I 63. entitled, "DEAR 952.204-2 Security (SEP 1997)(Modified)," and replaces it with Contract Clause I 63.

  9. Structure and scintillation yield of Ce-doped AlGa substituted yttrium garnet

    SciTech Connect (OSTI)

    Sidletskiy, Oleg; Kononets, Valerii; Lebbou, Kheirreddine; Neicheva, Svetlana; Voloshina, Olesya; Bondar, Valerii; Baumer, Vyacheslav; Belikov, Konstantin; Gektin, Alexander; Grinyov, Boris; Joubert, Marie-France

    2012-11-15

    Highlights: ? Range of Y{sub 3}(Al{sub 1?x}Ga{sub x}){sub 5}O{sub 12}:Ce solid solution crystals are grown from melt by the Czochralski method. ? Light yield of mixed crystals reaches 130% of the YAG:Ce value at x ? 0.4. ? ?1% of antisite defects is formed in YGG:Ce, but no evidence of this is obtained for the rest of crystals. -- Abstract: Structure and scintillation yield of Y{sub 3}(Al{sub 1?x}Ga{sub x}){sub 5}O{sub 12}:Ce solid solution crystals are studied. Crystals are grown from melt by the Czochralski method. Distribution of host cations in crystal lattice is determined. Quantity of antisite defects in crystals is evaluated using XRD and atomic emission spectroscopy data. Trend of light output at Al/Ga substitution in Y{sub 3}(Al{sub 1?x}Ga{sub x}){sub 5}O{sub 12}:Ce is determined for the first time. Light output in mixed crystals reaches 130% comparative to Ce-doped yttriumaluminum garnet. Luminescence properties at Al/Ga substitution are evaluated.

  10. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  11. Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

    SciTech Connect (OSTI)

    Bryan, Z; Bryan, I; Gaddy, BE; Reddy, P; Hussey, L; Bobea, M; Guo, W; Hoffmann, M; Kirste, R; Tweedie, J; Gerhold, M; Irving, DL; Sitar, Z; Collazo, R

    2014-12-01

    A Fermi-level control scheme for point defect management using above-bandgap UV illumination during growth is presented. We propose an extension to the analogy between the Fermi level and the electrochemical potential such that the electrochemical potential of a charged defect in a material with steady-state populations of free charge carriers may be expressed in terms of the quasi-Fermi levels. A series of highly Si-doped Al0.65Ga0.35N films grown by metalorganic chemical vapor deposition with and without UV illumination showed that samples grown under UV illumination had increased free carrier concentration, free carrier mobility, and reduced midgap photoluminescence all indicating a reduction in compensating point defects. (c) 2014 AIP Publishing LLC.

  12. Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces

    SciTech Connect (OSTI)

    Li, Huijie E-mail: sh-yyang@semi.ac.cn; Zhao, Guijuan; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan E-mail: sh-yyang@semi.ac.cn; Wang, Lianshan; Zhu, Qinsheng

    2014-05-21

    One dimensional electron gas (1DEG) arrays in vicinal GaN/AlGaN heterostructures have been studied. The steps at the interface would lead to the lateral barriers and limit the electron movement perpendicular to such steps. Through a self-consistent Schrdinger-Poisson approach, the electron energy levels and wave functions were calculated. It was found that when the total electron density was increased, the lateral barriers were lowered due to the screening effects by the electrons, and the electron gas became more two-dimension like. The calculated 1DEG densities were compared to the experimental values and good agreements were found. Moreover, we found that a higher doping density is more beneficial to form 1-D like electron gas arrays.

  13. Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

    2013-12-04

    We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ?{sub c}, and the microwave angular frequency, ?, satisfy 2? ? ?{sub c} ? 3.5? The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions.

  14. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 mΩ · cm2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  15. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect (OSTI)

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  16. Radiation resistance of GaAs-GaAlAs vertical cavity surface emitting lasers

    SciTech Connect (OSTI)

    Jabbour, J.; Zazoui, M.; Sun, G.C.; Bourgoin, J.C.; Gilard, O.

    2005-02-15

    The variations of the optical and electrical characteristics of a vertical cavity surface emitting laser based on GaAs quantum wells have been monitored versus irradiation with 1 MeV electrons. The results are understood by the introduction of nonradiative recombination centers in the wells whose characteristics, capture cross section for minority carriers times their introduction rate, can be determined. A similar study performed for proton irradiation shows that the results can be explained in the same way when the introduction rate of the defects is replaced by the proton energy loss into atomic collisions. These results allow us to deduce the equivalence between electron and proton irradiations: A flux of 1 proton cm{sup -2} which loses an energy E{sub nl} (eV) into atomic collisions is equivalent to a fluence of about 9x10{sup -2} E{sub nl} cm{sup -2}, 1 MeV electrons.

  17. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Masuda, T; Tomasulo, S; Lang, JR; Lee, ML

    2015-03-07

    We have investigated similar to 2.0 eV (AlxGa1-x)(0.51)In0.49P and similar to 1.9 eV Ga0.51In0.49P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (AlxGa1-x)(0.51)In0.49P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V-oc) ranging from 1.29 to 1.30 V for Ga0.51In0.49P cells, and 1.35-1.37 V for (AlxGa1-x)(0.51)In0.49P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W-oc = E-g/q - V-oc) of Ga0.51In0.49P cells to decrease from similar to 575 mV to similar to 565 mV, while that of (AlxGa1-x)(0.51)In0.49P cells remained nearly constant at 620 mV. The constant Woc as a function of substrate offcut for (AlxGa1-x)(0.51)In0.49P implies greater losses from non-radiative recombination compared with the Ga0.51In0.49P devices. In addition to larger Woc values, the (AlxGa1-x)(0.51)In0.49P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga0.51In0.49P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (AlxGa1-x)(0.51)In0.49P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells. (C) 2015 AIP Publishing LLC.

  18. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  19. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  20. Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Zaidi, Z. H. Lee, K. B.; Qian, H.; Jiang, S.; Houston, P. A.; Guiney, I.; Wallis, D. J.; Humphreys, C. J.

    2014-12-28

    In this work, we have compared SiN{sub x} passivation, hydrogen peroxide, and sulfuric acid treatment on AlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1??A/mm, which is much lower than that for SiN{sub x} passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 10{sup 4}10{sup 5} to 10{sup 7}) and a reduction in the device sub-threshold (S.S.) slope (from ?215 to 90?mV/decade) is achieved. The sulfuric acid is believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (D{sub it}) is reduced (from 4.86 to 0.90??10{sup 12?}cm{sup ?2} eV{sup ?1}), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiN{sub x} passivation after full device fabrication results in the reduction of D{sub it} and improves the surface related current collapse.

  1. Electron and hole gas in modulation-doped GaAs/Al{sub 1-x}Ga{sub x}As radial heterojunctions

    SciTech Connect (OSTI)

    Bertoni, Andrea; Royo, Miquel; Mahawish, Farah; Goldoni, Guido

    2011-11-15

    We perform self-consistent Schroedinger-Poisson calculations with exchange and correlation corrections to determine the electron and hole gas in a radial heterojunction formed in a GaAs/AlGaAs core-multi-shell nanowire, which is either n- or p-doped. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping density/gate potential. Contrary to planar heterojunctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between an isotropic, cylindrical distribution deep in the GaAs core (low doping) and a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface. At low doping, they present an additional localization pattern with six separated 2DEGs strips. The field generated by a back-gate may easily deform the electron or hole gas, breaking the sixfold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.

  2. Perpendicularly magnetized {tau}-MnAl (001) thin films epitaxied on GaAs

    SciTech Connect (OSTI)

    Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.

    2013-04-15

    Perpendicularly magnetized {tau}-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm{sup 3}, perpendicular magnetic anisotropy constant of 13.65 Merg/cm{sup 3}, and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets.

  3. Properties of Cu(In,Ga,Al)Se{sub 2} thin films fabricated by magnetron sputtering

    SciTech Connect (OSTI)

    Hameed, Talaat A.; Cao, Wei; Mansour, Bahiga A.; Elzawaway, Inas K.; Abdelrazek, El-Metwally M.; Elsayed-Ali, Hani E.

    2015-05-15

    Cu(In,Ga,Al)Se{sub 2} (CIGAS) thin films were studied as an alternative absorber layer material to Cu(In{sub x}Ga{sub 1?x})Se{sub 2}. CIGAS thin films with varying Al content were prepared by magnetron sputtering on Si(100) and soda-lime glass substrates at 350?C, followed by postdeposition annealing at 520?C for 5 h in vacuum. The film composition was measured by an electron probe microanalyzer while the elemental depth profiles were determined by secondary ion mass spectrometry. X-ray diffraction studies indicated that CIGAS films are single phase with chalcopyrite structure and that the (112) peak clearly shifts to higher 2? values with increasing Al content. Scanning electron microscopy images revealed dense and well-defined grains, as well as sharp CIGAS/Si(100) interfaces for all films. Atomic force microscopy analysis indicated that the roughness of CIGAS films decreases with increasing Al content. The bandgap of CIGAS films was determined from the optical transmittance and reflectance spectra and was found to increase as Al content increased.

  4. Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

    SciTech Connect (OSTI)

    Himwas, C.; Songmuang, R.; Le Si Dang; Bleuse, J.; Monroy, E.; Rapenne, L.; Sarigiannidou, E.

    2012-12-10

    We report on the structural and optical properties of AlGaN/AlN quantum dot (QD) superlattices synthesized by plasma-assisted molecular-beam epitaxy. Modifying the composition and geometry of the QDs, the peak emission wavelength can be shifted from 320 nm to 235 nm while keeping the internal quantum efficiency larger than 30%. The efficient carrier confinement is confirmed by the stability of the photoluminescence (PL) intensity and decay time, from low temperature up to 100 K. Above this threshold, the PL intensity decreases and the radiative lifetime increases due to carrier thermalization. We also identified the intraband electronic transition between the ground level of the conduction band and the first excited state confined along the growth axis (s-p{sub z}).

  5. Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films

    DOE Patents [OSTI]

    Allerman, Andrew A.; Crawford, Mary H.; Lee, Stephen R.

    2013-01-08

    A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.

  6. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    SciTech Connect (OSTI)

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (23) 108 cm2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  7. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  8. Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping

    SciTech Connect (OSTI)

    Hille, P. Mener, J.; Becker, P.; Teubert, J.; Schrmann, J.; Eickhoff, M.; Mata, M. de la; Rosemann, N.; Chatterjee, S.; Magn, C.; Arbiol, J.; Institucio Catalana de Recerca i Estudis Avanats , 08010 Barcelona, CAT

    2014-03-10

    We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10{sup 20}?cm{sup 3} shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration, a degradation of the photoluminescence properties is not observed.

  9. Influence of composition and heat treatment on damping and magnetostrictive properties of Fe18%(Ga + Al) alloys

    SciTech Connect (OSTI)

    Golovin, I. S.; Palacheva, V. V.; Zadorozhnyy, V. Yu.; Zhu, J.; Jiang, H.; Cifre, J.; Lograsso, T. A.

    2014-07-16

    The structure, magnetostriction and damping properties of Fe82Ga(18x)Alx (x = 0, 5, 8, 12) alloys were analyzed. The anelastic response of Fe18(Ga + Al) alloys was studied as a function of temperature (from 0 to 600 C), frequency (from 0.01 to 200 Hz) and amplitude (from 0.0004% to 0.2%) of forced vibrations. The origin of the relatively high damping capacity of FeGaAl alloy at room temperature was determined by applying a magnetic field and different heat treatment regimes. The substitution of Ga by Al in Fe18% Ga alloys was found to decrease magnetostriction and damping. The heat treatment of alloys influences the damping capacity of alloys more than variations of their chemical compositions. Thermally activated frequency and temperature-dependent anelastic effects in FeGaAl alloys were analyzed and the corresponding activation parameters for relaxation processes were evaluated. Internal friction effects caused by structural transformations were recorded and were found to be consistent with the A2 ? D03 ? L12 reaction. Thus, the physical mechanisms for all anelastic effects are discussed.

  10. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Masuda, Taizo Tomasulo, Stephanie; Lang, Jordan R.; Lee, Minjoo Larry

    2015-03-07

    We have investigated ?2.0?eV (Al{sub x}Ga{sub 1?x}){sub 0.51}In{sub 0.49}P and ?1.9?eV Ga{sub 0.51}In{sub 0.49}P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (Al{sub x}Ga{sub 1?x}){sub 0.51}In{sub 0.49}P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V{sub oc}) ranging from 1.29 to 1.30?V for Ga{sub 0.51}In{sub 0.49}P cells, and 1.351.37?V for (Al{sub x}Ga{sub 1?x}){sub 0.51}In{sub 0.49}P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W{sub oc}?=?E{sub g}/q???V{sub oc}) of Ga{sub 0.51}In{sub 0.49}P cells to decrease from ?575?mV to ?565?mV, while that of (Al{sub x}Ga{sub 1?x}){sub 0.51}In{sub 0.49}P cells remained nearly constant at 620?mV. The constant W{sub oc} as a function of substrate offcut for (Al{sub x}Ga{sub 1?x}){sub 0.51}In{sub 0.49}P implies greater losses from non-radiative recombination compared with the Ga{sub 0.51}In{sub 0.49}P devices. In addition to larger W{sub oc} values, the (Al{sub x}Ga{sub 1?x}){sub 0.51}In{sub 0.49}P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga{sub 0.51}In{sub 0.49}P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (Al{sub x}Ga{sub 1?x}){sub 0.51}In{sub 0.49}P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells.

  11. Development of an IR-transparent, inverted-grown, thin-film, Al[sub 0. 34]Ga[sub 0. 66]As/GaAs cascade solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; Timmons, M.L.; Sharps, P.R.; Colpitts, T.S.; Hills, J.S.; Hancock, J.; Hutchby, J.A. )

    1992-12-01

    Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 efficiency of 20.3%. Also, an inverted-grown, thin-film, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiencies of 19.9% and 21% at 1-sun and 7-suns, respectively, has been obtained.

  12. Influence of composition and heat treatment on damping and magnetostrictive properties of Fe18%(Ga+Al) alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Golovin, I. S.; Palacheva, V. V.; Zadorozhnyy, V. Yu.; Zhu, J.; Jiang, H.; Cifre, J.; Lograsso, T. A.

    2014-07-16

    The structure, magnetostriction and damping properties of Fe82Ga(18x)Alx (x = 0, 5, 8, 12) alloys were analyzed. The anelastic response of Fe18(Ga + Al) alloys was studied as a function of temperature (from 0 to 600 C), frequency (from 0.01 to 200 Hz) and amplitude (from 0.0004% to 0.2%) of forced vibrations. The origin of the relatively high damping capacity of FeGaAl alloy at room temperature was determined by applying a magnetic field and different heat treatment regimes. The substitution of Ga by Al in Fe18% Ga alloys was found to decrease magnetostriction and damping. The heat treatment of alloysmoreinfluences the damping capacity of alloys more than variations of their chemical compositions. Thermally activated frequency and temperature-dependent anelastic effects in FeGaAl alloys were analyzed and the corresponding activation parameters for relaxation processes were evaluated. Internal friction effects caused by structural transformations were recorded and were found to be consistent with the A2 ? D03 ? L12 reaction. Thus, the physical mechanisms for all anelastic effects are discussed.less

  13. Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures

    SciTech Connect (OSTI)

    Hofstetter, Daniel; Bour, David P.; Kirste, Lutz

    2014-06-16

    We present electro-modulated absorption and electro-luminescence measurements on chirped AlGaN/GaN-based multi-quantum well inter-subband structures grown by metal-organic vapour phase epitaxy. The absorption signal is a TM-polarized, 70?meV wide feature centred at 230?meV. At medium injection current, a 58?meV wide luminescence peak corresponding to an inter-subband transition at 1450?cm{sup ?1} (180?meV) is observed. Under high injection current, we measured a 4?meV wide structure peaking at 92.5?meV in the luminescence spectrum. The energy location of this peak is exactly at the longitudinal optical phonon of GaN.

  14. Highly tunable quantum Hall far-infrared photodetector by use of GaAs/Al{sub x}Ga{sub 1?x}As-graphene composite material

    SciTech Connect (OSTI)

    Tang, Chiu-Chun [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ling, D. C. [Department of Physics, Tamkang University, Tamsui Dist., New Taipei City 25137, Taiwan (China); Chi, C. C.; Chen, Jeng-Chung [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2014-11-03

    We have developed a highly tunable, narrow band far-infrared (FIR) photodetector which utilizes the characteristic merits of graphene and two-dimensional electron gas (2DEG) in GaAs/Al{sub x}Ga{sub 1?x}As heterostructure in the Quantum Hall states (QHS). The heterostructure surface is covered with chemical vapor-deposited graphene, which functions as a transparent top-gate to vary the electron density of the 2DEG. FIR response observed in the vicinity of integer QH regime can be effectively tuned in a wide range of 27102?cm{sup ?1} with a bias voltage less than ?1?V. In addition, we have found that the presence of graphene can genuinely modulate the photoresponse. Our results demonstrate a promising direction for realizing a tunable long-wavelength FIR detector using QHS in GaAs 2DEG/ graphene composite material.

  15. Birefringence in the transparency region of GaAs/AlAs multiple quantum wells

    SciTech Connect (OSTI)

    Sirenko, A.A.; Etchegoin, P.; Fainstein, A.; Eberl, K.; Cardona, M.

    1999-09-01

    Birefringence measurements for in-plane propagation of light below the absorption edge in GaAs/AlAs multiple quantum wells (MQW{close_quote}s) are reported for different well/barrier widths. A remarkable drop in the low-frequency limit of the birefringence has been observed for MQW structures with small periods and ascribed to the presence of local fields. The temperature dependence of the birefringence is also studied and complementary results in InP quantum dot structures are also presented. The latter exhibit a strong resonant birefringence, which can be explained by the reduced dimensionality in the joint density of states for optical transitions in the dots. {copyright} {ital 1999} {ital The American Physical Society}

  16. Performance Evaluation Plan (PEP) Pantex Plant Babcock & Wilcox Technical Services Pantex, LLC Contract No. DE-AC54-00AL66620

    National Nuclear Security Administration (NNSA)

    2 Performance Evaluation Plan (PEP) Pantex Plant Babcock & Wilcox Technical Services Pantex, LLC Contract No. DE-AC54-00AL66620 October 1, 2011 to September 30, 2012 A. Pursuant to the terms and conditions of the Contract, this Performance Evaluation Plan (PEP) sets forth the criteria upon which the Contractor's performance of work under the contract will be evaluated and upon which the determination of the total available fee amount earned shall be based. B. The base PEP is composed of

  17. Effect of exciton oscillator strength on upconversion photoluminescence in GaAs/AlAs multiple quantum wells

    SciTech Connect (OSTI)

    Kojima, Osamu, E-mail: kojima@phoenix.kobe-u.ac.jp; Okumura, Shouhei; Kita, Takashi [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan); Akahane, Kouichi [National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795 (Japan)

    2014-11-03

    We report upconversion photoluminescence (UCPL) in GaAs/AlAs multiple quantum wells. UCPL from the AlAs barrier is caused by the resonant excitation of the excitons in the GaAs well. When the quantum well has sufficient miniband width, UCPL is hardly observed because of the small exciton oscillator strength. The excitation-energy and excitation-density dependences of UCPL intensity show the exciton resonant profile and a linear increase, respectively. These results demonstrate that the observed UCPL caused by the saturated two-step excitation process requires a large number of excitons.

  18. Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy

    SciTech Connect (OSTI)

    Iwata, Yoshiya; Banal, Ryan G.; Ichikawa, Shuhei; Funato, Mitsuru; Kawakami, Yoichi

    2015-02-21

    The optical properties of Al-rich AlGaN/AlN quantum wells are assessed by excitation-power-dependent time-integrated (TI) and time-resolved (TR) photoluminescence (PL) measurements. Two excitation sources, an optical parametric oscillator and the 4th harmonics of a Ti:sapphire laser, realize a wide range of excited carrier densities between 10{sup 12} and 10{sup 21 }cm{sup −3}. The emission mechanisms change from an exciton to an electron-hole plasma as the excitation power increases. Accordingly, the PL decay time is drastically reduced, and the integrated PL intensities increase in the following order: linearly, super-linearly, linearly again, and sub-linearly. The observed results are well accounted for by rate equations that consider the saturation effect of non-radiative recombination processes. Using both TIPL and TRPL measurements allows the density of non-radiative recombination centers, the internal quantum efficiency, and the radiative recombination coefficient to be reliably extracted.

  19. Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN–based devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chan, Silvia; Mishra, Umesh K.; Tahhan, Maher; Liu, Xiang; Bisi, David; Gupta, Chirag; Koksaldi, Onur; Li, Haoran; Mates, Tom; DenBaars, Steven P.; et al

    2016-01-20

    In this study, we report on the growth and electrical characterization of (Al,Si)O dielectrics grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, oxygen, and silane as precursors. The growth rates, refractive indices, and composition of (Al,Si)O films grown on Si(001) were determined from ellipsometry and XPS measurements. Crystallinity and electrical properties of (Al,Si)O films grown in situ on c-plane GaN were characterized using grazing incidence X-ray diffraction and capacitance–voltage with current–voltage measurements, respectively. Si concentration in the films was found to be tunable by varying the trimethylaluminum and/or oxygen precursor flows. The Si incorporation suppressed the formation of crystallinemore » domains, leading to amorphous films that resulted in reduced interfacial trap density, low gate leakage and ultra-low hysteresis in (Al,Si)O/n-GaN MOS-capacitors.« less

  20. Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

    SciTech Connect (OSTI)

    Goswami, Arunesh; Trew, Robert J.; Bilbro, Griff L.

    2014-10-28

    A physics based model of the gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors is demonstrated. The model is based on the space charge limited current flow dominated by the effects of deep traps in the InAlN surface layer. The model predicts accurately the gate-leakage measurement data of the N-polar InAlN/GaN device with InAlN cap layer. In the pinch-off state, the gate leakage current conduction through the surface of the device in the drain access region dominates the current flow through the two dimensional electron gas channel. One deep trap level and two levels of shallow traps are extracted by fitting the model results with measurement data.

  1. Influence of composition and heat treatment on damping and magnetostrictive properties of Fe–18%(Ga + Al) alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Golovin, I. S.; Palacheva, V. V.; Zadorozhnyy, V. Yu.; Zhu, J.; Jiang, H.; Cifre, J.; Lograsso, T. A.

    2014-07-16

    The structure, magnetostriction and damping properties of Fe82Ga(18–x)Alx (x = 0, 5, 8, 12) alloys were analyzed. The anelastic response of Fe–18(Ga + Al) alloys was studied as a function of temperature (from 0 to 600 °C), frequency (from 0.01 to 200 Hz) and amplitude (from 0.0004% to 0.2%) of forced vibrations. The origin of the relatively high damping capacity of Fe–Ga–Al alloy at room temperature was determined by applying a magnetic field and different heat treatment regimes. The substitution of Ga by Al in Fe–18% Ga alloys was found to decrease magnetostriction and damping. The heat treatment of alloysmore »influences the damping capacity of alloys more than variations of their chemical compositions. Thermally activated frequency and temperature-dependent anelastic effects in Fe–Ga–Al alloys were analyzed and the corresponding activation parameters for relaxation processes were evaluated. Internal friction effects caused by structural transformations were recorded and were found to be consistent with the A2 → D03 → L12 reaction. Thus, the physical mechanisms for all anelastic effects are discussed.« less

  2. Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics

    SciTech Connect (OSTI)

    Khan, Aurangzeb; Marupaduga, S.; Anandakrishnan, S.S.; Alam, M.; Ekins-Daukes, N.J.; Lee, H.S.; Sasaki, T.; Yamaguchi, M.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imazumi, M.

    2004-11-29

    We present here the direct observation of the majority and minority carrier defects generation from wide-band-gap (2.04 eV) and thick (2 {mu}m) p-AlInGaP diodes and solar cells structures before and after 1 MeV electron irradiation by deep level transient spectroscopy (DLTS). One dominant hole-emitting trap H1 (E{sub V}+0.37{+-}0.05 eV) and two electron-emitting traps, E1 (E{sub C}-0.22{+-}0.04 eV) and E3 (E{sub C}-0.78{+-}0.05 eV) have been observed in the temperature range, which we could scan by DLTS. Detailed analysis of the minority carrier injection annealing experiment reveals that the H1 center has shown the same annealing characteristics, which has been previously observed in all phosphide-based materials such as InP, InGaP, and InGaAsP. The annealing property of the radiation-induced defects in p-AlInGaP reveals that multijunction solar cells and other optoelectronic devices such as light-emitting diodes based on this material could be considerably better to Si and GaAs in a radiation environment.

  3. Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well

    SciTech Connect (OSTI)

    Zhu, Laipan; Liu, Yu; Jiang, Chongyun; Yu, Jinling; Gao, Hansong; Ma, Hui; Qin, Xudong; Li, Yuan; Wu, Qing; Chen, Yonghai

    2014-10-13

    The spin polarization under low electric fields (?300?V/cm) at low temperatures has been studied in undoped InGaAs/AlGaAs multiple quantum well. The spin polarization was created by optical spin orientation using circularly polarized light and the inverse spin-Hall effect was employed to measure the spin polarization current. We observed an obvious spin depolarization especially at lower temperatures (80120?K). We ascribed the spin depolarization of the photoinduced electrons to the heating effect from the low electric fields (the low field regime 50300?V/cm). This spin depolarization due to the heating effect is sensitive to temperature and electric field, suggesting a wide range of potential applications and devices.

  4. Frequency up-conversion in nonpolar a-plane GaN/AlGaN based multiple quantum wells optimized for applications with silicon solar cells

    SciTech Connect (OSTI)

    Radosavljevi?, S.; Radovanovi?, J. Milanovi?, V.; Tomi?, S.

    2014-07-21

    We have described a method for structural parameters optimization of GaN/AlGaN multiple quantum well based up-converter for silicon solar cells. It involves a systematic tuning of individual step quantum wells by use of the genetic algorithm for global optimization. In quantum well structures, the up-conversion process can be achieved by utilizing nonlinear optical effects based on intersubband transitions. Both single and double step quantum wells have been tested in order to maximize the second order susceptibility derived from the density matrix formalism. The results obtained for single step wells proved slightly better and have been further pursued to obtain a more complex design, optimized for conversion of an entire range of incident photon energies.

  5. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

    SciTech Connect (OSTI)

    Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Lu, Liu; Ren, Fan; Holzworth, M. R.; Jones, Kevin S.; Pearton, Stephen J.; Smith, David J.; Kim, Jihyun; Zhang, Ming-Lan

    2015-04-13

    The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450?C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.

  6. Single photon emission of a charge-tunable GaAs/Al{sub 0.25}Ga{sub 0.75}As droplet quantum dot device

    SciTech Connect (OSTI)

    Langer, Fabian Plischke, David; Kamp, Martin; Hfling, Sven

    2014-08-25

    In this work, we report the fabrication of a charge-tunable GaAs/Al{sub 0.25}Ga{sub 0.75}As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 10{sup 9?}cm{sup ?2} range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40??eV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g{sup (2)}(0)?=?0.05).

  7. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  8. In situ study of atomic layer deposition Al{sub 2}O{sub 3} on GaP (100)

    SciTech Connect (OSTI)

    Dong, H.; Brennan, B.; Qin, X.; Hinkle, C. L.; Kim, J.; Wallace, R. M.; Zhernokletov, D. M.

    2013-09-16

    The interfacial chemistry of atomic layer deposition (ALD) of Al{sub 2}O{sub 3} on chemically treated GaP (100) has been studied using in situ X-ray photoelectron spectroscopy. A “self-cleaning” effect for Ga-oxide upon exposure to trimethylaluminum is seen to be efficient on the native oxide and chemically treated surfaces. The phosphorus oxide chemical states are seen to change during the ALD process, but the total concentration of P-oxides is seen to remain constant throughout the ALD process.

  9. Structure and Magnetic Properties of Ce3(Ni/Al/Ga)11„A New Phase with the La3Al11 Structure Type

    Office of Scientific and Technical Information (OSTI)

    Crystals 2015, 5, 1-8; doi:10.3390/cryst5010001 crystals ISSN 2073-4352 www.mdpi.com/journal/crystals Article Structure and Magnetic Properties of Ce 3 (Ni/Al/Ga) 11 -A New Phase with the La 3 Al 11 Structure Type Oliver Janka 1,2,†, *, Tian Shang 3,4,† , Ryan E. Baumbach 3,5,† , Eric D. Bauer 3,† , Joe D. Thompson 3,† and Susan M. Kauzlarich 1,†, * 1 Department of Chemistry, University of California, Davis, CA 95616, USA 2 Institut für Anorganische und Analytische Chemie,

  10. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    SciTech Connect (OSTI)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  11. Anti-site disorder and improved functionality of Mn?NiX (X = Al, Ga, In, Sn) inverse Heusler alloys

    SciTech Connect (OSTI)

    Paul, Souvik; Kundu, Ashis; Ghosh, Subhradip; Sanyal, Biplab

    2014-10-07

    Recent first-principles calculations have predicted Mn?NiX (X = Al, Ga, In, Sn) alloys to be magnetic shape memory alloys. Moreover, experiments on Mn?NiGa and Mn?NiSn suggest that the alloys deviate from the perfect inverse Heusler arrangement and that there is chemical disorder at the sublattices with tetrahedral symmetry. In this work, we investigate the effects of such chemical disorder on phase stabilities and magnetic properties using first-principles electronic structure methods. We find that except Mn?NiAl, all other alloys show signatures of martensitic transformations in presence of anti-site disorder at the sublattices with tetrahedral symmetry. This improves the possibilities of realizing martensitic transformations at relatively low fields and the possibilities of obtaining significantly large inverse magneto-caloric effects, in comparison to perfect inverse Heusler arrangement of atoms. We analyze the origin of such improvements in functional properties by investigating electronic structures and magnetic exchange interactions.

  12. Synthesis, Crystal and Electronic Structures of the Pnictides AE3TrPn3 (AE = Sr, Ba; Tr = Al, Ga; Pn = P, As)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Stoyko, Stanislav; Voss, Leonard; He, Hua; Bobev, Svilen

    2015-09-24

    New ternary arsenides AE3TrAs3 (AE = Sr, Ba; Tr = Al, Ga) and their phosphide analogs Sr3GaP3 and Ba3AlP3 have been prepared by reactions of the respective elements at high temperatures. Single-crystal X-ray diffraction studies reveal that Sr3AlAs3 and Ba3AlAs3 adopt the Ba3AlSb3-type structure (Pearson symbol oC56, space group Cmce, Z = 8). This structure is also realized for Sr3GaP3 and Ba3AlP3. Likewise, the compounds Sr3GaAs3 and Ba3GaAs3 crystallize with the Ba3GaSb3-type structure (Pearson symbol oP56, space group Pnma, Z = 8). Both structures are made up of isolated pairs of edge-shared AlPn4 and GaPn4 tetrahedra (Pn = pnictogen, i.e.,more » P or As), separated by the alkaline-earth Sr2+ and Ba2+ cations. In both cases, there are no homoatomic bonds, hence, regardless of the slightly different atomic arrangements, both structures can be rationalized as valence-precise [AE2+]3[Tr3+][Pn3-]3, or rather [AE2+]6[Tr2Pn6]12-, i.e., as Zintl phases.« less

  13. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub

    Office of Scientific and Technical Information (OSTI)

    0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy (Journal Article) | SciTech Connect Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy Citation Details In-Document Search Title: Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy Modulation-doped In{sub 0.41}Ga{sub

  14. Inductively coupled plasmareactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry

    SciTech Connect (OSTI)

    Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab

    2013-11-15

    Inductively coupled plasma (ICP)reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1?x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1?x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (?350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ??45 VDC.

  15. Optical characteristics of nanocrystalline Al{sub x}Ga{sub 1?x}N thin films deposited by hollow cathode plasma-assisted atomic layer deposition

    SciTech Connect (OSTI)

    Goldenberg, Eda; Ozgit-Akgun, Cagla; Biyikli, Necmi; Kemal Okyay, Ali

    2014-05-15

    Gallium nitride (GaN), aluminum nitride (AlN), and Al{sub x}Ga{sub 1?x}N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200?C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al{sub x}Ga{sub 1?x}N films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2?nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4?nm when the annealing duration increased from 30?min to 2?h (800?C). For all films, the average optical transmission was ?85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and Al{sub x}Ga{sub 1?x}N were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (??=?550?nm) with the increased Al content x (0???x???1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400?nm). Postdeposition annealing at 900?C for 2?h considerably lowered the refractive index value of GaN films (2.331.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95?eV, and it decreased to 3.90?eV for films annealed at 800?C for 30?min and 2?h. On the other hand, this value increased to 4.1?eV for GaN films annealed at 900?C for 2?h. This might be caused by Ga{sub 2}O{sub 3} formation and following phase change. The optical bandgap value of as-deposited Al{sub x}Ga{sub 1?x}N films decreased from 5.75 to 5.25?eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films.

  16. Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

    SciTech Connect (OSTI)

    Boucherit, M.; Soltani, A.; Rousseau, M.; Deresmes, D.; Berthe, M.; Durand, C.; De Jaeger, J.-C.

    2011-10-31

    AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 {mu}m to 4 {mu}m. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential resistance (NDR) was detected in the forward bias at 120 K. The NDR was observed for the mesa size of 2 {mu}m at 4 V with a peak-to-valley current ratio of 3.5. The measurement conditions were chosen to make NDR reproducible more than 50 times and apparent in both scan voltage directions after electrical treatment.

  17. Comparison of steady-state and transient characteristics of lattice-matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum-well lasers

    SciTech Connect (OSTI)

    Lam, Y.; Singh, J. ); Loehr, J.P. )

    1992-05-01

    This paper reports on numerical techniques to study the output spectra and to solve the multimode coupled rate equations including TE and TM propagations for In{sub x}Ga{sub 1{minus}x}As-Al{sub 0.3}Ga{sub 0.7}As and In{sub 0.53+x}Ga{sub 0.47{minus}x}As-Al{sub 0.48}In{sub 0.52}As quantum well lasers. Optical properties are calculated from a 4 {times} 4 k {center dot} p bandstructure and strain effects are included with the deformation potential theory. The authors find that an introduction of 1.4% compressive strain to the quantum well results in roughly 3-4 times improvement in the intrinsic static characteristics in terms of lower threshold current, greater mode suppression, and lower nonlashing photon population in the laser cavity. The authors also identify the role of strain on the large signal temporal response. If the laser is switched from the off state to a given photon density in the lasing mode, then the strained system exhibits a faster intrinsic time response. However, if the lasers are switched to equal total photon density, then the strained system has a slower time response. The authors also include calculated CHSH Auger rates in our model and find that the main effect of Auger recombination is to greatly increase the threshold current and to shorten the response time to large signal switching.

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    Open Energy Info (EERE)

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  1. Impact of N{sub 2} and forming gas plasma exposure on the growth and interfacial characteristics of Al{sub 2}O{sub 3} on AlGaN

    SciTech Connect (OSTI)

    Qin, Xiaoye; Dong, Hong; Brennan, Barry; Azacatl, Angelica; Kim, Jiyoung; Wallace, Robert M.

    2013-11-25

    The interface and atomic layer deposition (ALD) of Al{sub 2}O{sub 3} on the annealed, N{sub 2} plasma and forming gas (N{sub 2}:H{sub 2}) exposed Al{sub 0.25}Ga{sub 0.75}N surface was studied using in situ X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. Exposure of the Al{sub 0.25}Ga{sub 0.75}N surface to the plasma treatments is able to remove spurious carbon, and readily facilitate uniform ALD Al{sub 2}O{sub 3} nucleation.

  2. Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

    SciTech Connect (OSTI)

    Dyakonova, N.; Teppe, F.; Lusakowski, J.; Knap, W.; Levinshtein, M.; Dmitriev, A.P.; Shur, M.S.; Bollaert, S.; Cappy, A.

    2005-06-01

    The influence of the magnetic field on the excitation of plasma waves in InGaAs/AlInAs lattice matched high electron mobility transistors is reported. The threshold source-drain voltage of the excitation of the terahertz emission shifts to higher values under a magnetic field increasing from 0 to 6 T. We show that the main change of the emission threshold in relatively low magnetic fields (smaller than approximately 4 T) is due to the magnetoresistance of the ungated parts of the channel. In higher magnetic fields, the effect of the magnetic field on the gated region of the device becomes important.

  3. Security, LLC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two-hundred twenty-five nonprofit organizations receive monetary donations from Los Alamos National Security, LLC September 21, 2015 Recognizing employee and retiree volunteer efforts LOS ALAMOS, N.M., Sept. 21, 2015-More than 225 nonprofit organizations received $162,650 from Los Alamos National Security, LLC, which manages Los Alamos National Laboratory. The LANS contributions are determined by the number of volunteer hours logged by Laboratory employees and retirees through an organization

  4. Role of Ce4+ in the scintillation mechanism of codoped Gd3Ga3Al2O12:Ce

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, Yuntao; Meng, Fang; Li, Qi; Koschan, Merry; Melcher, Charles L.

    2014-10-17

    To control the time-response performance of widely used cerium-activated scintillators in cutting-edge medical-imaging devices, such as time-of-flight positron-emission tomography, a comprehensive understanding of the role of Ce valence states, especially stable Ce4+, in the scintillation mechanism is essential. However, despite some progress made recently, an understanding of the physical processes involving Ce4+ is still lacking. The aim of this work is to clarify the role of Ce4+ in scintillators by studying Ca2+ codoped Gd3Ga3Al2O12∶Ce (GGAG∶Ce). By using a combination of optical absorption spectra and x-ray absorption near-edge spectroscopies, the correlation between Ca2+codoping content and the Ce4+ fraction is seen. The energy-levelmore » diagrams of Ce3+ and Ce4+ in the Gd3Ga3Al2O12 host are established by using theoretical and experimental methods, which indicate a higher position of the 5d1 state of Ce4+ in the forbidden gap in comparison to that of Ce3+. Underlying reasons for the decay-time acceleration resulting from Ca2+ codoping are revealed, and the physical processes of the Ce4+-emission model are proposed and further demonstrated by temperature-dependent radioluminescence spectra under x-ray excitation.« less

  5. Role of Ce4+ in the scintillation mechanism of codoped Gd3Ga3Al2O12:Ce

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, Yuntao; Meng, Fang; Li, Qi; Koschan, Merry; Melcher, Charles L.

    2014-10-17

    To control the time-response performance of widely used cerium-activated scintillators in cutting-edge medical-imaging devices, such as time-of-flight positron-emission tomography, a comprehensive understanding of the role of Ce valence states, especially stable Ce4+, in the scintillation mechanism is essential. However, despite some progress made recently, an understanding of the physical processes involving Ce4+ is still lacking. The aim of this work is to clarify the role of Ce4+ in scintillators by studying Ca2+ codoped Gd3Ga3Al2O12∶Ce (GGAG∶Ce). By using a combination of optical absorption spectra and x-ray absorption near-edge spectroscopies, the correlation between Ca2+codoping content and the Ce4+ fraction is seen. The energy-levelmore »diagrams of Ce3+ and Ce4+ in the Gd3Ga3Al2O12 host are established by using theoretical and experimental methods, which indicate a higher position of the 5d1 state of Ce4+ in the forbidden gap in comparison to that of Ce3+. Underlying reasons for the decay-time acceleration resulting from Ca2+ codoping are revealed, and the physical processes of the Ce4+-emission model are proposed and further demonstrated by temperature-dependent radioluminescence spectra under x-ray excitation.« less

  6. Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb.sub.x alloy system

    DOE Patents [OSTI]

    Moon, Ronald L. (Palo Alto, CA)

    1980-01-01

    Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5 .mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photolvoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of growing layer.

  7. Structure and magnetic properties of Ce?(Ni/Al/Ga)??-A...

    Office of Scientific and Technical Information (OSTI)

    Z 2) with a 436.38(14), b 1004.5(3) and c 1293.4(4) pm. This is a standardized unit cell of the previously published LaAl structure type. Wavelength dispersive...

  8. The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs

    SciTech Connect (OSTI)

    Mandal, A.; Verma, U.; Halder, N.; Chakrabarti, S.

    2012-03-15

    Highlight: Black-Right-Pointing-Pointer Coupled InAs/GaAs MQDs with (In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As + GaAs) caps are considered. Black-Right-Pointing-Pointer Monolayer coverage, barrier thickness and growth rate of the dots are the factors. Black-Right-Pointing-Pointer PL peaks for the samples are within 1.1-1.3 {mu}m; significant for IBSCs and lasers. Black-Right-Pointing-Pointer NPTP (non-resonant multi-phonon assisted tunneling process) effect on FWHM of PL. -- Abstract: The self-assembled InAs/GaAs MQDs are widely investigated for their potential application in optoelectronic devices like lasers and photovoltaics. We have explored the effect of QD growth rate and structural parameters like capping layer thickness on the morphology and optical properties of the MQD heterostructures overgrown with a combination capping of InAlGaAs and GaAs. The growth rate of the seed layers in the MQD samples is also varied to investigate its effect in the vertical stacking of the islands. The change in the morphology and the optical properties of the samples due to variation in growth and structural parameters are explained by the presence of strain in the QD structures, which arises due to lattice mismatch.

  9. Thermodynamics of CoAl{sub 2}O{sub 4}-CoGa{sub 2}O{sub 4} solid solutions

    SciTech Connect (OSTI)

    Lilova, Kristina I.; Navrotsky, Alexandra; Melot, Brent C.; Seshadri, Ram

    2010-06-15

    CoAl{sub 2}O{sub 4}, CoGa{sub 2}O{sub 4}, and their solid solution Co(Ga{sub z}Al{sub 1-z}){sub 2}O{sub 4} have been studied using high temperature oxide melt solution calorimetry in molten 2PbO.B{sub 2}O{sub 3} at 973 K. There is an approximately linear correlation between lattice parameters, enthalpy of formation from oxides, and the Ga content. The experimental enthalpy of mixing is zero within experimental error. The cation distribution parameters are calculated using the O'Neill and Navrotsky thermodynamic model. The enthalpies of mixing calculated from these parameters are small and consistent with the calorimetric data. The entropies of mixing are calculated from site occupancies and compared to those for a random mixture of Ga and Al ions on octahedral site with all Co tetrahedral and for a completely random mixture of all cations on both sites. Despite a zero heat of mixing, the solid solution is not ideal in that activities do not obey Raoult's Law because of the more complex entropy of mixing. - Graphical abstract: Measured enthalpies of mixing of CoAl{sub 2}O{sub 4}-CoGa{sub 2}O{sub 4} solid solutions are close to zero but entropies of mixing reflect the complex cation distribution, so the system is not an ideal solution.

  10. CuAl{sub x}Ga{sub 1?x}Se{sub 2} thin films for photovoltaic applications: Optical and compositional analysis

    SciTech Connect (OSTI)

    Lpez-Garca, J.; Maffiotte, C.; Guilln, C.; Herrero, J.

    2013-03-15

    Highlights: ? Wide band gap CAGS thin films have been obtained by selenization of evaporated metallic precursors. ? Direct nonlinear dependence of the band gap energy with the Al/(Al + Ga) ratio is found. ? The bowing parameter decreases when the CAGS film thickness increases. ? The Cu at% remains constant in depth, together with some Al, Ga and Se gradients. ? Surface is strongly oxidized but the oxidation is relatively low in bulk. - Abstract: Wide-band gap chalcopyrite semiconductors have a great interest due to their potential application in multi-junction thin film solar cells or as window layers. Polycrystalline CuAl{sub x}Ga{sub 1?x}Se{sub 2} (CAGS) thin films have been prepared by selenization of evaporated metallic precursor layers on bare and Mo-coated soda lime glass substrates. The optical properties of CAGS films of 2 thicknesses have been analyzed by spectrophotometry in the visible-infrared (VIS-IR) and the compositional characteristics have been studied by energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy (XPS). The optical transmission increases and the band gap energy shifts toward higher values as the Al content increases, which indicates the partial substitution of Ga by Al. The dependence of the band gap with the composition has resulted to be nonlinear and a bowing parameter of b = 0.62 and b = 0.54 for 0.6 ?m and 1.1 ?m-CAGS samples, respectively, has been obtained. XPS data have shown an Al, Ga and Se composition gradient in depth and a surface strongly oxidized. However, XPS reveals that the Cu composition remains constant in depth and the oxidation is relatively low in bulk increasing slightly in the interface with Mo/SLG. Moreover, samples with high Al content reveal a higher contribution of CuO in depth.

  11. Luminescence and superradiance in electron-beam-excited Al{sub x}Ga{1-sub x}N

    SciTech Connect (OSTI)

    Bokhan, P. A.; Gugin, P. P.; Zakrevsky, Dm. E.; Malin, T. V.; Zhuravlev, K. S.; Osinnykh, I. V.; Solomonov, V. I.; Spirina, A. V.

    2014-09-21

    Luminescence and superradiance characteristics of 0.51.2-?m thick Al{sub x}Ga{sub 1-x}N films grown by molecular-beam epitaxy on sapphire substrates were studied under excitation of the films with low-energy (<20 keV) and high-energy (170 keV) electron beams. In both cases, the luminescence spectra looked quite similarly; they exhibited a band-edge luminescence with x-dependent wavelength ranging from 365 nm to 310 nm and a broadband emission taking over the whole visible spectral region. Superradiance within the broad band was obtained by pumping the samples with powerful an electron beam in the form of an open-discharge-generated filament.

  12. Electronic properties of binary and mixed [RMNH]{sub n} (R=H,CH{sub 3}, M=Al,Ga,In) oligomers

    SciTech Connect (OSTI)

    Oranskaya, A. A. Pomogaeva, A. V. Timoshkin, A. Y.

    2015-03-30

    Theoretical investigation of structural and electronic properties is presented for the rod-like oligomers R{sub 3}-[MRNH]{sub 3n}-H{sub 3} and [RMNH]{sub n+1} (M=Ga,Al,In R=H,CH{sub 3}) of different lengths. Electronic structures of the oligomers with and without substitutions of Ga atoms with Al or In were studied at DFT level of theory. Clusters up to 8?nm of length were considered. A type of terminal groups of the oligomers is found to have a dominant influence on their electronic properties.

  13. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Wang, Juan; Xing, Jun-Liang; Xiang, Wei; Wang, Guo-Wei; Xu, Ying-Qiang; Ren, Zheng-Wei; Niu, Zhi-Chuan

    2014-02-03

    Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877??10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112??10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300?K to 77?K. This study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.

  14. Investigations on the electronic, structural, magnetic properties related to shape-memory behavior in Ti{sub 2}CoX (X=Al, Ga, In)

    SciTech Connect (OSTI)

    Wei, Xiao-Ping; Chu, Yan-Dong; Sun, Xiao-Wei; E, Yan; Deng, Jian-Bo; Xing, Yong-Zhong

    2015-02-15

    Highlights: • The analysis of phase stability trend is studied for Ti{sub 2}CoX(X = Al, Ga, In). • Ti{sub 2}CoGa is more suitable as shape memory alloy. • Total magnetic moments disappear with a increase of c/a ratio for all systems. • Density of states at the Fermi level are also shown. - Abstract: Using the full-potential local orbital minimum-basis method, we have performed a systematic investigations on the electronic, structural, and magnetic properties related to shape memory applications for Ti{sub 2}CoX (X=Al, Ga, In) alloys. Our results confirm that these alloys are half-metallic ferromagnets with total magnetic moment of 2μ{sub B} per formula unit in austenite phase, and undergo a martensitic transformation at low temperatures. The relative stabilities of the martensitic phases differ considerably between Ti{sub 2}CoX (X=Al, Ga, In). Details of the electronic structures suggest that the differences in hybridizations between the magnetic components are responsible for trends of phase. Quantitative estimates for the energetics and the magnetizations indicate that Ti{sub 2}CoGa is a promising candidate for shape memory applications.

  15. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

    SciTech Connect (OSTI)

    Crawford, Mary Hagerott; Olson, S. M.; Banas, M.; Park, Y. -B.; Ladous, C.; Russell, Michael J.; Thaler, Gerald; Zahler, J. M.; Pinnington, T.; Koleske, Daniel David; Atwater, Harry A.

    2008-06-01

    We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.

  16. Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction

    SciTech Connect (OSTI)

    Kuchuk, A. V.; Stanchu, H. V.; Kladko, V. P.; Belyaev, A. E.; Li, Chen; Ware, M. E.; Mazur, Yu. I.; Salamo, G. J.

    2014-12-14

    Here, we demonstrate X-ray fitting through kinematical simulations of the intensity profiles of symmetric reflections for epitaxial compositionally graded layers of AlGaN grown by molecular beam epitaxy pseudomorphically on [0001]-oriented GaN substrates. These detailed simulations depict obvious differences between changes in thickness, maximum concentration, and concentration profile of the graded layers. Through comparison of these simulations with as-grown samples, we can reliably determine these parameters, most important of which are the profiles of the concentration and strain which determine much of the electrical properties of the film. In addition to learning about these parameters for the characterization of thin film properties, these fitting techniques create opportunities to calibrate growth rates and control composition profiles of AlGaN layers with a single growth rather than multiple growths as has been done traditionally.

  17. AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

    SciTech Connect (OSTI)

    Sun, K. X.

    2011-05-31

    This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

  18. Raman scattering as a tool for the evaluation of strain in GaN/AlN quantum dots: The effect of capping

    SciTech Connect (OSTI)

    Cros, A.; Cantarero, A.; Garro, N.; Coraux, J.; Daudin, B.

    2007-10-15

    The strain state of GaN/AlN quantum dots grown on 6H-SiC has been investigated as a function of AlN capping thickness by three different techniques. On the one hand, resonant Raman scattering allowed the detection of the A{sub 1}(LO) quasiconfined mode. It was found that its frequency increases with AlN deposition, while its linewidth did not evolve significantly. Available experiments of multiwavelength anomalous diffraction and diffraction anomalous fine structure on the same samples provided the determination of the wurtzite lattice parameters a and c of the quantum dots. A very good agreement is found between resonant Raman scattering and x-ray measurements, especially concerning the in-plane strain state. The results demonstrate the adequacy of Raman scattering, in combination with the deformation potential and biaxial approximations, to determine quantitatively values of strain in GaN quantum dot layers.

  19. Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yu, J. L.; Cheng, S. Y.; Lai, Y. F.; Zheng, Q.

    2015-01-07

    The in-plane optical anisotropy (IPOA) in (001)-grown GaAs/AlGaAs quantum wells (QWs) with different well widths varying from 2?nm to 8?nm has been studied by reflectance difference spectroscopy. Ultra-thin InAs layers with thickness ranging from 0.5 monolayer (ML) to 1.5 ML have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry in the QWs. It is demonstrated that the IPOA can be accurately tailored by the thickness of the inserted ultra-thin InAs layer at the interfaces. Strain-induced IPOA has also been extracted by using a stress apparatus. We find that the intensity of the strain-induced IPOA decreases with the thickness of the inserted InAs layer, while that of the interface-induced IPOA increases with the thickness of the InAs layer. Theoretical calculations based on 6 band k ? p theory have been carried out, and good agreements with experimental results are obtained. Our results demonstrate that, the IPOA of the QWs can be greatly and effectively tuned by inserting an ultra-thin InAs layer with different thicknesses at the interfaces of QWs, which does not significantly influence the transition energies and the transition probability of QWs.

  20. Systematic investigation of effects of exciton–acoustic-phonon scattering on photoluminescence rise times of free excitons in GaAs/Al{sub 0.3}Ga{sub 0.7}As single quantum wells

    SciTech Connect (OSTI)

    Nakayama, Masaaki Ohno, Tatsuya; Furukawa, Yoshiaki

    2015-04-07

    We have systematically investigated the photoluminescence (PL) dynamics of free excitons in GaAs/Al{sub 0.3}Ga{sub 0.7}As single quantum wells, focusing on the energy relaxation process due to exciton–acoustic-phonon scattering under non-resonant and weak excitation conditions as a function of GaAs-layer thickness from 3.6 to 12.0 nm and temperature from 30 to 50 K. The free exciton characteristics were confirmed by observation that the PL decay time has a linear dependence with temperature. We found that the free exciton PL rise rate, which is the reciprocal of the rise time, is inversely linear with the GaAs-layer thickness and linear with temperature. This is consistent with a reported theoretical study of the exciton–acoustic-phonon scattering rate in the energy relaxation process in quantum wells. Consequently, it is conclusively verified that the PL rise rate is dominated by the exciton–acoustic-phonon scattering rate. In addition, from quantitative analysis of the GaAs-layer thickness and temperature dependences, we suggest that the PL rise rate reflects the number of exciton–acoustic-phonon scattering events.

  1. Epuron LLC | Open Energy Information

    Open Energy Info (EERE)

    Epuron LLC Jump to: navigation, search Name: Epuron LLC Place: Philadelphia, Pennsylvania Zip: 19103 Sector: Solar Product: Epuron LLC is the US subsidiary of Germany solar...

  2. Agenera, LLC | Open Energy Information

    Open Energy Info (EERE)

    Agenera, LLC Jump to: navigation, search Logo: Agenera, LLC Name: Agenera, LLC Address: P.O. Box 15544 Place: Phoenix, Arizona Zip: 85060 Sector: Solar Product: Solar energy...

  3. InAs quantum dot growth on Al{sub x}Ga{sub 1?x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    SciTech Connect (OSTI)

    Jakomin, R.; Kawabata, R. M. S.; Souza, P. L.; Mouro, R. T.; Pires, M. P.; Micha, D. N.

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1?x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x?=?0.3 and InAs dot vertical dimensions of 5?nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  4. Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

    SciTech Connect (OSTI)

    Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N. J.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Itoh, H.

    2005-11-01

    Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al{sub 0.08}Ga{sub 0.92}){sub 0.52}In{sub 0.48}P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm{sup -1}, which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E{sub {nu}}+0.90{+-}0.05 eV) was observed. The changes in carrier concentrations ({delta}p) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm{sup -1}, of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm{sup -1}, in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm{sup 2}), the annealing activation energy of H2 defect is {delta}E=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V{sub p}-P{sub i}). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center.

  5. Structure and magnetic properties of Ce₃(Ni/Al/Ga)₁₁—A new phase with the La₃Al₁₁ structure type

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Janka, Oliver; Shang, Tian; Baumbach, Ryan E.; Bauer, Eric D.; Thompson, Joe D.; Kauzlarich, Susan M.

    2015-03-01

    Single crystals of Ce₃(Ni/Al/Ga)₁₁ were obtained from an Al flux reaction. Single crystals of the title compound crystallizing in the orthorhombic space group Immm (No. 71, Z = 2) with a = 436.38(14), b = 1004.5(3) and c = 1293.4(4) pm. This is a standardized unit cell of the previously published La₃Al₁₁ structure type. Wavelength dispersive microprobe provides the composition of Ce₃.₁₁₍₁₎Ni₀.₀₃₍₁₎Al₈.₉₅₍₁₎Ga₁.₉₀₍₁₎. Single crystal refinement provides the composition Ce₃Ni₀.₀₈Al₉.₁₃Ga₁.₇₈ with substitution of the Ni and Ga on the Al1 and Al4 sites with the Al2 and Al3 solely occupied by Al. Magnetic susceptibility measurements reveal antiferromagnetic ordering with TN =more » 4.8 K and there is no evidence for a ferromagnetic ordering that has been reported for Ce₃Al₁₁. The effective magnetic moment was found to be μeff = 1.9μB/Ce, which is lower than the expected value for trivalent Ce (2.54μB/Ce).« less

  6. Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells

    SciTech Connect (OSTI)

    Huang, Cheng-Ying Law, Jeremy J. M.; Rodwell, Mark J. W.; Lu, Hong; Gossard, Arthur C.; Jena, Debdeep

    2014-03-28

    We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10?nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3?nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63??10{sup 3} cm{sup 2}/Vs to 2.71??10{sup 3}?cm{sup 2}/Vs for a 3?nm InGaAs well.

  7. Band alignment and electrical properties of Al{sub 2}O{sub 3}/?-Ga{sub 2}O{sub 3} heterojunctions

    SciTech Connect (OSTI)

    Kamimura, Takafumi Hoi Wong, Man; Krishnamurthy, Daivasigamani; Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Masui, Takekazu

    2014-05-12

    The band alignment of Al{sub 2}O{sub 3}/n-Ga{sub 2}O{sub 3} was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8??0.2?eV measured for Al{sub 2}O{sub 3}, the conduction and valence band offsets at the interface were estimated to be 1.5??0.2?eV and 0.7??0.2?eV, respectively. The conduction band offset was also obtained from tunneling current in Al{sub 2}O{sub 3}/n-Ga{sub 2}O{sub 3} (2{sup }01) metal-oxide-semiconductor (MOS) diodes using the Fowler-Nordheim model. The electrically extracted value was in good agreement with the XPS data. Furthermore, the MOS diodes exhibited small capacitance-voltage hysteresis loops, indicating the successful engineering of a high-quality Al{sub 2}O{sub 3}/Ga{sub 2}O{sub 3} interface.

  8. Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Moseley, Michael Allerman, Andrew; Crawford, Mary; Wierer, Jonathan J.; Smith, Michael; Biedermann, Laura

    2014-08-07

    Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al{sub 0.7}Ga{sub 0.3}N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these open-core threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al{sub 0.7}Ga{sub 0.3}N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.

  9. Didion Ethanol LLC | Open Energy Information

    Open Energy Info (EERE)

    Didion Ethanol LLC Jump to: navigation, search Name: Didion Ethanol LLC Place: Cambria, Wisconsin Zip: 53923 Product: Also Didion Milling LLC, Grand River Distribution LLC....

  10. Al

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the way to the drip line .... 31 Al 28 Mg 32 Si 12 B + 18 O 30 Al* (-pn) 28 Mg 15 C + 18 O 33 Si* (-pn) 31 Al 16 N + 18 O 34 P* (-pn) 32 Si 15 C 10 7 s...

  11. X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al{sub 2}O{sub 3}/InGaAs stacks

    SciTech Connect (OSTI)

    Shekhter, P.; Palumbo, F.; Cohen Weinfeld, K.; Eizenberg, M.

    2014-09-08

    In this work, the post-breakdown characteristics of metal gate/Al{sub 2}O{sub 3}/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al{sub 2}O{sub 3}/InGaAs and SiO{sub 2}/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.

  12. Characterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology

    SciTech Connect (OSTI)

    Kotera, N.; Tanaka, K. [Kyushu Inst. of Technology, Iizuka, Fukuoka (Japan); Arimoto, H.; Miura, N. [Univ. of Tokyo, Roppongi, Tokyo (Japan). Inst. of Solid State Physics; Jones, E.D. [Sandia National Labs., Albuquerque, NM (United States); Mishima, T. [Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.; Washima, M. [Hitachi Cable, Ltd., Tsukuba, Ibaraki (Japan). Advanced Research Center

    1998-05-01

    Conduction-band effective masses in a direction parallel to the quantum well plane were investigated in n-type-modulation-doped InGaAs/InAlAs multiquantum well system. Thicknesses of well and barrier were 5 and 10 nm. Three highly-doped specimens having about 1 {times} 10{sup 12} cm{sup {minus}2} per one quantum well were prepared by MBE. Double-crystal X-ray diffraction was used to check the crystal quality. Heavy electron effective masses, almost 50% bigger than the band edge mass of 0.041m{sub 0}, were measured by far-infrared and infrared cyclotron resonances under pulse high magnetic fields up to 100 T. Nonparabolicity of this subband was less than 12% by comparing the two cyclotron resonances. Observed two-dimensional subband structure was quite different from conduction-band effective mass in a direction perpendicular to the same quantum well and from GaAs/GaAlAs quantum well system.

  13. Improved InGaN LED System Efficacy and Cost via Droop Reduction...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Improved InGaN LED System Efficacy and Cost via Droop Reduction Improved InGaN LED System Efficacy and Cost via Droop Reduction Lead Performer: Lumileds, LLC - San Jose, CA DOE ...

  14. Analysis of different tunneling mechanisms of In{sub x}Ga{sub 1?x}As/AlGaAs tunnel junction light-emitting transistors

    SciTech Connect (OSTI)

    Wu, Cheng-Han; Wu, Chao-Hsin

    2014-10-27

    The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x?=?5% and 2.5%) of the In{sub x}Ga{sub 1?x}As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

  15. Cation-poor complex metallic alloys in Ba(Eu)AuAl(Ga) systems: Identifying the keys that control structural arrangements and atom distributions at the atomic level

    SciTech Connect (OSTI)

    Smetana, Volodymyr; Steinberg, Simon; Mudryk, Yaroslav; Pecharsky, Vitalij; Miller, Gordon J.; Mudring, Anja -Verena

    2015-10-19

    Four complex intermetallic compounds BaAu6xGa6y (x = 1, y = 0.9) (I), BaAu6xAl6y (x = 0.9, y = 0.6) (II), EuAu6.2Ga5.8 (III), and EuAu6.1Al5.9 (IV) have been synthesized, and their structures and homogeneity ranges have been determined by single crystal and powder X-ray diffraction. Whereas I and II originate from the NaZn13-type structure (cF104112, Fm3C), III (tP52, P4/nbm) is derived from the tetragonal Ce2Ni17Si9-type, and IV (oP104, Pbcm) crystallizes in a new orthorhombic structure type. Both I and II feature formally anionic networks with completely mixed site occupation by Au and triel (Tr = Al, Ga) atoms, while a successive decrease of local symmetry from the parental structures of I and II to III and, ultimately, to IV correlates with increasing separation of Au and Tr on individual crystallographic sites. Density functional theory-based calculations were employed to determine the crystallographic site preferences of Au and the respective triel element to elucidate reasons for the atom distribution (coloring scheme). Chemical bonding analyses for two different EuAu6Tr6 models reveal maximization of the number of heteroatomic AuTr bonds as the driving force for atom organization. The Fermi levels fall in broad pseudogaps for both models allowing some electronic flexibility. Spin-polarized band structure calculations on the EuAu6Tr6 models hint to singlet ground states for europium and long-range magnetic coupling for both EuAu6.2Ga5.8 (III) and EuAu6.1Al5.9 (IV). This is substantiated by experimental evidence because both compounds show nearly identical magnetic behavior with ferromagnetic transitions at TC = 6 K and net magnetic moments of 7.35 ?B/f.u. at 2 K. As a result, the effective moments of 8.3 ?B/f.u., determined from CurieWeiss fits, point to divalent oxidation states for europium in both III and IV.

  16. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs

    SciTech Connect (OSTI)

    Fluegel, Brian; Alberi, Kirstin; Reno, John; Mascarenhas, Angelo

    2015-03-12

    The aluminum concentration dependence of the energies of the direct and indirect bandgaps arising from the ? and X conduction bands are measured at 1.7 K in the semiconductor alloy AlxGa1-xAs. The composition at which the bands cross is determined from photoluminescence of molecular-beam epitaxy samples grown very close to crossover. The use of resonant laser excitation and the improved sample linewidth allows precise determination of the bound exciton transition energies. Moreover, photoluminescence excitation spectroscopy is used to measure the binding energies of the donor-bound excitons and the ? free exciton binding energy.

  17. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs

    SciTech Connect (OSTI)

    Fluegel, Brian; Alberi, Kirstin; Reno, John; Mascarenhas, Angelo

    2015-03-12

    The aluminum concentration dependence of the energies of the direct and indirect bandgaps arising from the Γ and X conduction bands are measured at 1.7 K in the semiconductor alloy AlxGa1-xAs. The composition at which the bands cross is determined from photoluminescence of molecular-beam epitaxy samples grown very close to crossover. The use of resonant laser excitation and the improved sample linewidth allows precise determination of the bound exciton transition energies. Moreover, photoluminescence excitation spectroscopy is used to measure the binding energies of the donor-bound excitons and the Γ free exciton binding energy.

  18. A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In{sub 0.50}Ga{sub 0.50}As/GaAs quantum dot infrared photodetector with quaternary In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As capping

    SciTech Connect (OSTI)

    Adhikary, Sourav; Chakrabarti, Subhananda

    2012-11-15

    Highlights: ? We investigated the effect of ex situ annealing on InGaAs/GaAs QDIP with InAlGaAs layer. ? As-grown defect was removed by using post-growth annealing treatment. ? Increase in the compressive strain due to annealing is calculated from XRD curve. ? Three-fold enhancement in responsivity is observed in the QDIPs annealed at 650 C. ? Two-fold enhancement in D* is observed sample annealed at 650 C compared to as grown. -- Abstract: The effect of post-growth rapid thermal annealing on 35-layer In{sub 0.50}Ga{sub 0.50}As/GaAs quantum dot infrared photodetector (QDIP) with quaternary In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As capping has been investigated. Transmission electron microscopy showed some as-grown defects were removed by post growth annealing treatment. An increase in the compressive strain in the heterostructure due to annealing was identified from X-ray diffraction curve. A two-color photoresponse in the long-wave region (8.5 and 10.2 ?m) was observed in both as-grown device and those annealed at 650 C temperature. A three-fold enhancement in peak responsivity was observed in the QDIPs annealed at 650 C (1.19 A/W) compared to that in the as-grown (0.34 A/W). Detectivity also increased by two fold from as-grown to 650 C annealed device. The changes are attributed to the removal of as-grown defects and dislocations during epitaxial growth. These removals changed the confinement potential profile, which resulted in an improvement in the detectivity and responsivity of the annealed sample.

  19. Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy

    SciTech Connect (OSTI)

    Wen, C.; Ge, B. H.; Cui, Y. X.; Li, F. H.; Zhu, J.; Yu, R.; Cheng, Z. Y.

    2014-11-15

    The stacking faults (SFs) in an AlSb/GaAs (001) interface were investigated using a 300 kV spherical aberration-corrected high-resolution transmission electron microscope (HRTEM). The structure and strain distribution of the single and intersecting (V-shaped) SFs associated with partial dislocations (PDs) were characterized by the [110] HRTEM images and geometric phase analysis, respectively. In the biaxial strain maps ?{sub xx} and ?{sub yy}, a SF can be divided into several sections under different strain states (positive or negative strain values). Furthermore, the strain state for the same section of a SF is in contrast to each other in ?{sub xx} and ?{sub yy} strain maps. The modification in the strain states was attributed to the variation in the local atomic displacements for the SF in the AlSb film on the GaAs substrate recorded in the lattice image. Finally, the single SF was found to be bounded by two 30 PDs. A pair of 30 PDs near the heteroepitaxial interface reacted to form a Lomer-Cottrell sessile dislocation located at the vertices of V-shaped SFs with opposite screw components. The roles of misfit dislocations, such as the PDs, in strain relaxation were also discussed.

  20. USGlobal LLC | Open Energy Information

    Open Energy Info (EERE)

    USGlobal LLC Jump to: navigation, search Name: USGlobal LLC Address: 1451 W. Cypress Creek Road, Suite 307 Place: Fort Lauderdale, Florida Zip: 33309 Product: Investment and...

  1. TIAX LLC | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Logo: TIAX LLC Name: TIAX LLC Address: 15 Acorn Park Place: Cambridge, Massachusetts Zip: 02140-2390 Region: Greater Boston Area Sector: Efficiency Year...

  2. Wader LLC | Open Energy Information

    Open Energy Info (EERE)

    Wader LLC Jump to: navigation, search Name: Wader LLC Place: Laguna Hills, California Zip: 92653 Sector: Hydro Product: Developer of energy generation equipment based on salt...

  3. Solarbuzz LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Place: San Francisco, California Zip: 94103 Product: Consultancy and research provider to PV industry References: Solarbuzz LLC1 This article is a stub. You can help...

  4. Fortistar LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Place: New York, New York Zip: 10650 Product: Fortistar is a privately owned US power generation company largely based on landfill gas. References: Fortistar LLC1 This...

  5. Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint

    SciTech Connect (OSTI)

    Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

    2011-07-01

    We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 ?m to a modest 0.50 ?m over an underlying 0.10-?m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 ?m/3 ?m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

  6. Photopumped red-emitting InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Ryou, J. H.; Dupuis, R. D.; Walter, G.; Kellogg, D. A.; Holonyak, N.; Mathes, D. T.; Hull, R.; Reddy, C. V.; Narayanamurti, V.

    2001-06-25

    We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650{degree}C on In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers have a high density on the order of 10{sup 10} cm{sup {minus}2} and the dominant size of individual quantum dots ranges from {similar_to}5 to {similar_to}10 nm for 7.5 monolayer {open_quotes}equivalent growth.{close_quotes} These InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at {lambda}{similar_to}680 nm at room temperature in optically pumped samples. {copyright} 2001 American Institute of Physics.

  7. Pinpoint Power DR LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Pinpoint Power DR LLC Place: Massachusetts Product: Demand response provider. References: Pinpoint Power DR LLC1 This article is a stub. You...

  8. Atlanta Chemical Engineering LLC | Open Energy Information

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    Atlanta Chemical Engineering LLC Jump to: navigation, search Logo: Atlanta Chemical Engineering LLC Name: Atlanta Chemical Engineering LLC Place: Marietta, Georgia Country: United...

  9. Zilkha Biomass Energy LLC | Open Energy Information

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  10. Edgewood Carbon Holdings LLC | Open Energy Information

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    Edgewood Carbon Holdings LLC Jump to: navigation, search Name: Edgewood Carbon Holdings LLC Place: Cornwall, Vermont Zip: 57530 Sector: Carbon Product: Edgewood Carbon Holdings LLC...

  11. Ecowatt Design LLC | Open Energy Information

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    Ecowatt Design LLC Jump to: navigation, search Logo: Ecowatt Design LLC Name: Ecowatt Design LLC Address: 10900 Northwest Fwy Place: Houston, Texas Zip: 77092 Region: Texas Area...

  12. Nedak Ethanol LLC | Open Energy Information

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    Nedak Ethanol LLC Jump to: navigation, search Name: Nedak Ethanol LLC Place: Atkinson, Nebraska Zip: 68713 Product: NEDAK Ethanol, LLC is a Nebraska limited liability company,...

  13. Incognito Green Building, LLC | Open Energy Information

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    Incognito Green Building, LLC Jump to: navigation, search Logo: Incognito Green Building, LLC Name: Incognito Green Building, LLC Address: 230 Dove Court Place: Santa Paula,...

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    Solar LLC Jump to: navigation, search Logo: Inovateus Solar LLC Name: Inovateus Solar LLC Address: 19890 State Line Rd. Place: South Bend, Indiana Zip: 46637 Sector: Solar Number...

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    Squared, LLC Jump to: navigation, search Logo: Solar Energy Squared, LLC Name: Solar Energy Squared, LLC Address: 116 Ottenheimer Plaza, President Clinton Avenue Place: Little...

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    Panels Plus LLC Jump to: navigation, search Name: Solar Panels Plus LLC Place: Chesapeake, Virginia Zip: 23320 Sector: Solar Product: Solar Panels Plus LLC distributes solar energy...

  18. Homeland Renewable Energy LLC | Open Energy Information

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    Homeland Renewable Energy LLC Jump to: navigation, search Name: Homeland Renewable Energy LLC Place: Langhorne, Pennsylvania Zip: 19047 Product: Holding company for Fibrowatt LLC...

  19. Carbon Micro Battery LLC | Open Energy Information

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    Micro Battery LLC Jump to: navigation, search Name: Carbon Micro Battery, LLC Place: California Sector: Carbon Product: Carbon Micro Battery, LLC, technology developer of micro and...

  20. Biofuel Industries Group LLC | Open Energy Information

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    Industries Group LLC Jump to: navigation, search Name: Biofuel Industries Group LLC Place: Adrian, Michigan Zip: 49221 Product: Biofuel Industries Group, LLC owns and operates the...

  1. New Hope Partners LLC | Open Energy Information

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    Partners LLC Jump to: navigation, search Name: New Hope Partners, LLC Place: Newtown, Pennsylvania Sector: Renewable Energy Product: New Hope Partners LLC, is a business...

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    Sustainable Energy, LLC Jump to: navigation, search Logo: Go Sustainable Energy, LLC Name: Go Sustainable Energy, LLC Address: 3857 N. High Street, Suite 208 Place: Columbus, Ohio...

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    Biofuels LLC Jump to: navigation, search Name: Mid-America Biofuels LLC Place: Jefferson City, Missouri Zip: 65102 Sector: Biofuels Product: Joint Venture of Biofuels LLC,...

  5. Empire Biofuels LLC | Open Energy Information

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    Biofuels LLC Jump to: navigation, search Name: Empire Biofuels LLC Place: New York, New York Zip: 13148 Sector: Biofuels Product: Empire Biofuels LLC (Empire) was founded in April...

  6. Energy Capital LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Energy Capital LLC Place: Ketchum, Idaho Zip: ID 83340 Sector: Renewable Energy Product: Energy Capital LLc is a financial catalyst focusing...

  7. Booner Capital LLC | Open Energy Information

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    Booner Capital LLC Jump to: navigation, search Name: Booner Capital LLC Place: Florida Sector: Wind energy Product: Booner Capital LLC is PE investor in wind power companies....

  8. Townsend Ventures LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Townsend Ventures LLC Product: A Maryland, USA based branch of Townsend Capital LLC formed as a vehicle for that company's...

  9. Turnbull Hydro LLC | Open Energy Information

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    Turnbull Hydro LLC Jump to: navigation, search Name: Turnbull Hydro LLC Place: Montana Sector: Hydro Product: Montana-based small hydro developer. References: Turnbull Hydro LLC1...

  10. A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures

    SciTech Connect (OSTI)

    Lin, Jun; Povey, Ian M.; Hurley, Paul K.; Walsh, Lee; Hughes, Greg; Woicik, Joseph C.; O'Regan, Terrance P.

    2014-07-14

    Capacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface move towards the expected direction as observed from HAXPES measurements. The In{sub 0.53}Ga{sub 0.47}As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface and suggest an interface state density increasing towards the In{sub 0.53}Ga{sub 0.47}As valence band edge.

  11. Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55??m

    SciTech Connect (OSTI)

    Dusanowski, ?.; Syperek, M. Rudno-Rudzi?ski, W.; Mrowi?ski, P.; Sek, G.; Misiewicz, J.; Somers, A.; Reithmaier, J. P.; Hfling, S.; Forchel, A.

    2013-12-16

    Exciton and biexciton dynamics in a single self-assembled InAs/In{sub 0.53}Ga{sub 0.23}Al{sub 0.24}As/InP(001) quantum dash emitting near 1.55??m has been investigated by micro-photoluminescence and time-resolved micro-photoluminescence at T?=?4.2?K. The exciton and biexciton fine structure splitting of ?60??eV, the biexciton binding energy of ?3.5?meV, and the characteristic exciton and biexciton decay times of 2.0??0.1?ns and 1.1??0.1?ns, respectively, have been determined. The measurement of the biexciton and exciton cross-correlation statistics of the photon emission confirmed the cascaded relaxation process. The exciton-to-biexciton decay time ratio and a small fine structure splitting suggest carrier localization within the investigated quantum dash.

  12. AL2007-04.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    4.pdf AL2007-04.pdf PDF icon AL2007-04.pdf More Documents & Publications Preliminary Notice of Violation, BWXT Y-12 LLC - EA-2007-04 AL2007-05.doc&0; AL2007-09...

  13. VICA Technologies LLC | Open Energy Information

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    Technologies LLC Jump to: navigation, search Name: VICA Technologies LLC Place: Philadelphia, Pennsylvania Zip: 19104 Sector: Biomass, Renewable Energy Product:...

  14. Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al{sub 2}O{sub 3} on GaSb(100)

    SciTech Connect (OSTI)

    Zhernokletov, Dmitry M.; Dong, Hong; Brennan, Barry; Kim, Jiyoung; Wallace, Robert M.; Yakimov, Michael; Tokranov, Vadim; Oktyabrsky, Serge

    2013-11-15

    In-situ monochromatic x-ray photoelectron spectroscopy, low energy electron diffraction, ion scattering spectroscopy, and transmission electron microscopy are used to examine the GaSb(100) surfaces grown by molecular beam epitaxy after thermal desorption of a protective As or Sb layer and subsequent atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. An antimony protective layer is found to be more favorable compared to an arsenic capping layer as it prevents As alloys from forming with the GaSb substrate. The evolution of oxide free GaSb/Al{sub 2}O{sub 3} interface is investigated by “half-cycle” ALD reactions of trimethyl aluminum and deionized water.

  15. Ovonic Hydrogen Systems LLC formerly Texaco Ovonic Hydrogen Systems...

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    Hydrogen Systems LLC formerly Texaco Ovonic Hydrogen Systems LLC Jump to: navigation, search Name: Ovonic Hydrogen Systems LLC (formerly Texaco Ovonic Hydrogen Systems LLC) Place:...

  16. Alamos National Security, LLC

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    Security, LLC during a recognition event beginning at 9:30 a.m. Thursday, June 28, at Fuller Lodge in downtown Los Alamos. LANS contributions are determined by the number of...

  17. Alamos National Security, LLC

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    National Security, LLC during a recognition event beginning at 9 a.m. Wednesday at Fuller Lodge in downtown Los Alamos. The monetary donations are being made to the nonprofits...

  18. Alamos National Security, LLC

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    Security (LANS), LLC during a recognition event beginning at 9:30 a.m. June 12, at Fuller Lodge in downtown Los Alamos. LANS contributions are determined by the number of...

  19. Nuclear Waste Partnership, LLC

    Office of Environmental Management (EM)

    Nuclear Waste Partnership, LLC Waste Isolation Pilot Plant Report from the Department of Energy Voluntary Protection Program Onsite Review March 17-27, 2015 U.S. Department of...

  20. Alamos National Security, LLC

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    Eleven nonprofit organizations receive community giving grants from Los Alamos National Security, LLC December 15, 2009 Los Alamos, New Mexico, December 15, 2009- Eleven local nonprofit organizations with projects supported by Los Alamos National Laboratory employee volunteers received $75,000 in Community Giving grants from Los Alamos National Security, LLC, the company that manages the Lab for the National Nuclear Security Administration. The organizations are located in Los Alamos, Española,

  1. Alamos National Security, LLC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    30 nonprofit organizations to receive monetary donations from Los Alamos National Security, LLC June 25, 2012 Recognizing employee and retiree volunteer efforts LOS ALAMOS, NEW MEXICO, June 25, 2012-Nonprofit organizations will receive more than $180,000 from Los Alamos National Security, LLC during a recognition event beginning at 9:30 a.m. Thursday, June 28, at Fuller Lodge in downtown Los Alamos. LANS contributions are determined by the number of volunteer hours logged by Los Alamos National

  2. Brookhaven Science Associates, LLC

    Office of Environmental Management (EM)

    23, 2015 Dr. Doon L. Gibbs Laboratory Director Brookhaven Science Associates, LLC Brookhaven National Laboratory 40 Brookhaven Avenue Upton, New York 11973-5000 WCO-2015-02 Dear Dr. Gibbs: The Office of Enterprise Assessments' Office of Enforcement completed its investigation into the facts and circumstances associated with the meteorological tower electrical shock event that occurred at the Brookhaven National Laboratory on November 12, 2014. Brookhaven Science Associates, LLC (BSA) documented

  3. Terrabon LLC | Open Energy Information

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    Product: Texas-based Terrabon LLC was founded in 1995 in an effort to commercialize biofuel technology originally developed at Texas A&M University. References: Terrabon LLC1...

  4. IBIS LLC | Open Energy Information

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    IBIS LLC Jump to: navigation, search Name: IBIS LLC Region: United States Sector: Marine and Hydrokinetic Website: www.ibisltd.com This company is listed in the Marine and...

  5. Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs high electron mobility transistor

    SciTech Connect (OSTI)

    Moro-Melgar, Diego; Mateos, Javier Gonzlez, Toms Vasallo, Beatriz G.

    2014-12-21

    By using a Monte Carlo simulator, the influence of the tunnel injection through the Schottky contact at the gate electrode of a GaInAs/AlInAs High Electron Mobility Transistor (HEMT) has been studied in terms of the static and noise performance. The method used to characterize the quantum tunnel current has been the Wentzel-Kramers-Brillouin (WKB) approach. The possibility of taking into account the influence of the image charge effect in the potential barrier height has been included as well. Regarding the static behavior, tunnel injection leads to a decrease in the drain current I{sub D} due to an enhancement of the potential barrier controlling the carrier transport through the channel. However, the pinch-off is degraded due to the tunneling current. Regarding the noise behavior, since the fluctuations in the potential barrier height caused by the tunnel-injected electrons are strongly coupled with the drain current fluctuations, a significant increase in the drain-current noise takes place, even when the tunnel effect is hardly noticeable in the static I-V characteristics, fact that must be taken into account when designing scaled HEMT for low-noise applications. In addition, tunnel injection leads to the appearance of full shot noise in the gate current.

  6. Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount

    SciTech Connect (OSTI)

    Markov, L. K., E-mail: l.markov@mail.ioffe.ru; Smirnova, I. P.; Pavlyuchenko, A. S. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kukushkin, M. V.; Vasil'eva, E. D. [ZAO Innovation 'Tetis' (Russian Federation); Chernyakov, A. E. [Russian Academy of Sciences, Science-and-Technology Microelectronics Center (Russian Federation); Usikov, A. S. [De Core Nanosemiconductors Ltd. (India)

    2013-03-15

    Vertical and flip-chip light-emitting diode (LED) chips are compared from the viewpoint of the behavior of current spreading in the active region and the distribution of local temperatures and thermal resistances of chips. AlGaInN LED chips of vertical design are fabricated using Si as a submount and LED flipchips were fabricated with the removal of a sapphire substrate. The latter are also mounted on a Si submount. The active regions of both chips are identical and are about 1 mm{sup 2} in size. It is shown that both the emittance of the crystal surface in the visible range and the distribution of local temperatures estimated from radiation in the infrared region are more uniform in crystals of vertical design. Heat removal from flip-chips is insufficient in regions of the n contact, which do not possess good thermal contact with the submount. As a result, the total thermal resistances between the p-n junction and the submount both for the vertical chips and for flip-chips are approximately 1 K/W. The total area of the flip-chips exceeds that of the vertical design chips by a factor of 1.4.

  7. Distribution of cations in wurtzitic InxGa1-xN and InxAl1-xN alloys: Consequences for energetics and quasiparticle electronic structures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    de Carvalho, Luiz Cláudio; Schleife, André; Furthmüller, Jürgen; Bechstedt, Friedhelm

    2012-03-27

    The ternary, isostructural, wurtzite-derived group-III mononitride alloys InxGa1-xN andInxAl1-xN are reexamined within a cluster expansion approach. Using density functional theory together with the AM05 exchange-correlation functional, the total energies and the optimized atomic geometries of all 22 clusters classes of the cluster expansion for each material system are calculated. The computationally demanding calculation of the corresponding quasiparticle electronic structures is achieved for all cluster classes by means of a recently developed scheme to approximately solve the quasiparticle equation based on the HSE06 hybrid functional and the G₀W₀ approach. Using two different alloy statistics, the configurational averages for the lattice parameters,more » the mixing enthalpies, and the bulk moduli are calculated. The composition-dependent electronic structures of the alloys are discussed based on configurationally averaged electronic states, band gaps, and densities of states. Ordered cluster arrangements are found to be energetically rather unfavorable, however, they possess the smallest energy gaps and, hence, contribute to light emission. The influence of the alloy statistics on the composition dependencies and the corresponding bowing parameters of the band gaps is found to be significant and should, hence, lead to different signatures in the optical-absorption or -emission spectra.« less

  8. Venture Global Calcasieu Pass, LLC - (Formerly Venture Global LNG, LLC) -

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    14-88-LNG | Department of Energy Venture Global Calcasieu Pass, LLC - (Formerly Venture Global LNG, LLC) - 14-88-LNG Venture Global Calcasieu Pass, LLC - (Formerly Venture Global LNG, LLC) - 14-88-LNG The Office of Fossil Energy gives notice of receipt of an application filed on May 13, 2014, by Venture Global LNG, LLC (VGP) requesting long-term, multi-contract authority to export (in addition to the volumes proposed in Docket 13-69-LNG) domestically produced LNG of up to five million

  9. First principles study of the structural, elastic, electronic and phonon properties of CdX{sub 2}O{sub 4} (X=Al, Ga, In) spinel-type oxides

    SciTech Connect (OSTI)

    Candan, Abdullah; U?ur, Gkay

    2014-10-06

    We have performed ab-initio calculations of the structural, electronic, elastic and dynamical properties for the spinel compounds CdX{sub 2}O{sub 4} (X=Al, Ga, In) using the plane wave pseudo-potential method within the generalized gradient approximation (GGA). The calculated lattice parameters, elastic constants for these compounds are in good agreement with the previous calculated values. The computed direct band gaps of CdAl{sub 2}O{sub 4}, CdGa{sub 2}O{sub 4} and CdIn{sub 2}O{sub 4} are 2.90 eV, 1.92 eV and 1.16 eV, respectively. The lattice vibrations were calculated by direct method. The calculated phonon dispersion curves show that all compounds are dynamically stable in the spinel structure.

  10. Thermoelectric power generator module of 16x16 Bi{sub 2}Te{sub 3} and 0.6%ErAs:(InGaAs){sub 1-x}(InAlAs){sub x} segmented elements

    SciTech Connect (OSTI)

    Zeng Gehong; Bahk, Je-Hyeong; Bowers, John E.; Lu Hong; Gossard, Arthur C.; Singer, Suzanne L.; Majumdar, Arun; Bian, Zhixi; Zebarjadi, Mona; Shakouri, Ali

    2009-08-24

    We report the fabrication and characterization of thermoelectric power generator modules of 16x16 segmented elements consisting of 0.8 mm thick Bi{sub 2}Te{sub 3} and 50 {mu}m thick ErAs:(InGaAs){sub 1-x}(InAlAs){sub x} with 0.6% ErAs by volume. An output power up to 6.3 W was measured when the heat source temperature was at 610 K. The thermoelectric properties of (InGaAs){sub 1-x}(InAlAs){sub x} were characterized from 300 up to 830 K. The finite element modeling shows that the performance of the generator modules can further be enhanced by improving the thermoelectric properties of the element materials, and reducing the electrical and thermal parasitic losses.

  11. Alamos National Security, LLC

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    40 nonprofit organizations to receive monetary donations from Los Alamos National Security, LLC June 10, 2013 Employees and retirees perform 270,000 volunteer hours LOS ALAMOS, N.M., June 10, 2013-Nonprofit organizations will receive more than $180,000 from Los Alamos National Security (LANS), LLC during a recognition event beginning at 9:30 a.m. June 12, at Fuller Lodge in downtown Los Alamos. LANS contributions are determined by the number of volunteer hours logged by Los Alamos National

  12. Mission Support Alliance, LLC

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    Alliance, LLC 2490 Garlick Boulevard Richland, WA 99354 Subcontracting Plan for Small Business Concerns Pursuant to FAR 19.7 FAR Clause 52.219-9 and Public Laws 95-907, 99-661, 106-50, and 100-108 Update: November 19, 2014 In accordance with Public Law (P.L.) 95-507, P.L. 99-661, Section 1207, P.L. 106-50, P.L. 100-180, Section 806 and FAR Clause 52-219-9 (Small Business Subcontracting Plan); Mission Support Alliance LLC is using the following subcontracting plan: Name of Contractor: Mission

  13. GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J.; Sun, X.; Alian, A.; Heyns, M.; Afanas'ev, V. V.

    2011-04-01

    The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

  14. Growth of large-domain YBa{sub 2}Cu{sub 3}O{sub x} with new seeding crystals of CaNdAlO{sub 4} and SrLaGaO{sub 4}.

    SciTech Connect (OSTI)

    Shi, D.; Hull, J. R.; LeBlanc, D.; LeBlanc, M. A. R.; Dabkowski, A.; Chang, Y.; Jiang, Y.; Zhang, Z.; Fan, H.; Energy Technology; Univ. of Cincinnati; Univ. of Ottawa; McMaster Univ.; Chinese Academy of Sciences

    1995-05-10

    Single crystals of CaNdAlO{sub 4} and SrLaGaO{sub 4} were used as seeds to grow large domains of YBa{sub 2}Cu{sub 3}O{sub x} for levitation applications. These crystals have high melting temperatures (> 1500 C) and similar lattice structures to that of YBa{sub 2}Cu{sub 3}O{sub x}. In a seeded melt-texturing method developed previously, the single crystals of CaNdAlO{sub 4}, SrLaGaO{sub 4}, and NdBa{sub 2}Cu{sub 3}O{sub x} were used as seeds for comparison. After melt processing, scanning electron microscopy analysis did not reveal any major differences in all these seeded melt-textured samples. However, the levitation forces in the samples seeded with single crystals of CaNdAlO{sub 4} and SrLaGaO{sub 4} increased considerably compared to that of the sample seeded with NdBa{sub 2}Cu{sub 3}O{sub x}. A model is proposed to describe the domain growth mechanism during seeded melt processing.

  15. Microstructural evaluation of Sb-adjusted Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer layer systems for IR applications

    SciTech Connect (OSTI)

    Chen, E.; Paine, D.C.; Uppal, P.; Ahearn, J.S.; Nichols, K.; Charache, G.W.

    1998-06-01

    The authors report on a transmission electron microscopy (TEM) study of Sb-adjusted quaternary Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBE at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBe at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} is successively increased in a series of 125 nm thick layers. Post growth analysis using conventional bright field and weak beam dark field imaging of these buffer layers in cross-section reveals that the interface misfit dislocations are primarily of the 60{degree} type and are distributed through out the interfaces of the buffer layer. When optimized, the authors have shown, using plan view and cross-sectional TEM, that this approach can reduce the threading defect density to below the detectability limit of TEM (< 10{sup 5}/cm{sup 2}) and preserve growth surface planarity. The Sb-graded approach was used to fabricate two 2.2 {micro}m power converter structures fabricated using InGaAs grown on Sb-based buffer layers on GaAs substrates. A microstructural and electrical characterization was performed on these device structures and the results are contrasted with a sample in which InP was selected as the substrate. Microstructure, defect density and device performance in these not-yet-optimized Sb-based buffer layers compares favorably to equivalent devices fabricated using InP substrates.

  16. WilderShares LLC | Open Energy Information

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    WilderShares LLC Jump to: navigation, search Name: WilderShares LLC Place: Encinitas, California Zip: 92024 Product: WilderShares LLC, is a provider of indexes for the clean...

  17. Vision FL LLC | Open Energy Information

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    FL LLC Jump to: navigation, search Name: VisionFL, LLC Place: Florida Sector: Biomass Product: Florida-based biomass project developer. References: VisionFL, LLC1 This article...

  18. Asia West LLC | Open Energy Information

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    West LLC Jump to: navigation, search Logo: Asia West LLC Name: Asia West LLC Address: One East Weaver Street Place: Greenwich, Connecticut Zip: 06831 Region: Northeast - NY NJ CT...

  19. Prairie Creek Ethanol LLC | Open Energy Information

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    Ethanol LLC Jump to: navigation, search Name: Prairie Creek Ethanol LLC Place: Goldfield, Iowa Zip: 50542 Product: Prairie Creek Ethanol, LLC had planned to build a 55m gallon...

  20. First United Ethanol LLC | Open Energy Information

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    Ethanol LLC Jump to: navigation, search Name: First United Ethanol LLC Place: Camilla, Georgia Zip: 31730 Product: First United Ethanol LLC (FUEL) was formed to construct a 100 MGY...

  1. Trinity CO2 LLC | Open Energy Information

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    CO2 LLC Jump to: navigation, search Name: Trinity CO2 LLC Place: Texas Product: String representation "Trinity CO2 LLC ... smission lines." is too long. References: Trinity CO2...

  2. Everton Energy LLC | Open Energy Information

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    Energy LLC Place: Kansas Product: Everton Energy, LLC develops and acquires ethanol plants References: Everton Energy LLC1 This article is a stub. You can help OpenEI by...

  3. Emc3 LLC | Open Energy Information

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    Emc3 LLC Jump to: navigation, search Logo: Emc3 LLC Name: Emc3 LLC Address: 5 Blue Anchor Street Place: Marlton, New Jersey Zip: 08053 Region: Northeast - NY NJ CT PA Area Sector:...

  4. EMC3, llc | Open Energy Information

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    EMC3, llc Jump to: navigation, search Logo: EMC3, llc Name: EMC3, llc Address: 5 Blue Anchor Street Place: Marlton, New Jersey Zip: 08053 Region: Northeast - NY NJ CT PA Area Phone...

  5. M Power LLC | Open Energy Information

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    Power LLC Jump to: navigation, search Name: M-Power LLC Place: Finley, North Dakota Sector: Wind energy Product: M-Power, LLC, headquartered in Finley, North Dakota, was formed...

  6. AEP Wind Energy LLC | Open Energy Information

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    AEP Wind Energy LLC Jump to: navigation, search Name: AEP Wind Energy LLC Place: Dallas, Texas Zip: 75266 1064 Sector: Wind energy Product: AEP Wind Energy LLC is a project...

  7. Universal Entech LLC | Open Energy Information

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    Entech LLC Jump to: navigation, search Name: Universal Entech, LLC Place: Phoenix, Arizona Zip: 85041 Product: Project developer focused on waste-to-energy References: Universal...

  8. Solar Generations LLC | Open Energy Information

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    Generations LLC Jump to: navigation, search Name: Solar Generations LLC Address: 965 W. Main Street Place: Branford, Massachusetts Zip: 06405 Region: Greater Boston Area Sector:...

  9. Cornerstone Holdings LLC | Open Energy Information

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    Holdings LLC Jump to: navigation, search Name: Cornerstone Holdings LLC Address: 11001 W. 120th Ave, Suite 330 Place: Broomfield, Colorado Zip: 80021 Region: Rockies Area...

  10. White Mountain Group LLC | Open Energy Information

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    Group LLC Jump to: navigation, search Name: White Mountain Group, LLC Place: Delaware Product: The company has entered an agreement with Australian Biodiesel Group for a share...

  11. Diamond Wire Technology LLC | Open Energy Information

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    Wire Technology LLC Jump to: navigation, search Name: Diamond Wire Technology LLC Place: Colorado Springs, Colorado Zip: 80916 Sector: Solar Product: US-based manufacturer of...

  12. Florida Biomass Energy LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Florida Biomass Energy, LLC Place: Florida Sector: Biomass Product: Florida-based biomass project developer. References: Florida Biomass...

  13. Multitrade Biomass Holdings LLC | Open Energy Information

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    Holdings LLC Jump to: navigation, search Name: Multitrade Biomass Holdings LLC Place: Ridgeway, Virginia Zip: 24148-0000 Sector: Renewable Energy Product: Virginia-based developer...

  14. CPV Wind Ventures LLC | Open Energy Information

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    Ventures LLC Jump to: navigation, search Name: CPV Wind Ventures LLC Place: Silver Spring, Maryland Zip: 20910 Sector: Wind energy Product: Wind power project developer....

  15. Nautica Windpower LLC | Open Energy Information

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    Nautica Windpower LLC Jump to: navigation, search Name: Nautica Windpower LLC Address: 9670 Maurer Dr Place: Olmsted Falls, Ohio Zip: 44138 Sector: Wind energy Phone Number:...

  16. Four Seasons Windpower, LLC | Open Energy Information

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    Seasons Windpower, LLC Jump to: navigation, search Name: Four Seasons Windpower, LLC Address: 1697 Wilbur Road Place: Medina, Ohio Zip: 44256 Sector: Solar, Wind energy Product:...

  17. Third Planet Windpower LLC | Open Energy Information

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    Third Planet Windpower LLC Jump to: navigation, search Name: Third Planet Windpower LLC Place: San Ramon, California Zip: 94583 Sector: Wind energy Product: Third Planet Windpower,...

  18. Innovation Forward, LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Innovation Forward, LLC Address: 1000 Creekside Plaza Third Floor Place: Gahanna, Ohio Zip: 43230 Sector: Services Phone Number: (614)...

  19. Adkins Energy LLC | Open Energy Information

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    search Name: Adkins Energy LLC Place: Illinois Product: Cooperative producing bioethanol in Illinois References: Adkins Energy LLC1 This article is a stub. You can help...

  20. Silicon Border Development LLC | Open Energy Information

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    Silicon Border Development LLC Jump to: navigation, search Name: Silicon Border Development LLC Place: Poway, California Zip: 92064 Sector: Solar Product: US-based developer of...

  1. National Grid Generation, LLC | Open Energy Information

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    Grid Generation, LLC Jump to: navigation, search Name: National Grid Generation, LLC Place: New York Service Territory: Massachusetts, New Hampshire, New York, Rhode Island Phone...

  2. Planetary Fuels LLC | Open Energy Information

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    Fuels LLC Jump to: navigation, search Name: Planetary Fuels, LLC Place: Seattle, Washington Product: Seattle-based start-up dedicated to the production of biodiesel. Coordinates:...

  3. Sky Power LLC | Open Energy Information

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    Power LLC Jump to: navigation, search Name: Sky Power LLC Place: Portland, Oregon Zip: 97204 Sector: Wind energy Product: Developer of a high-altitude wind turbine technology....

  4. Aeronautica Windpower LLC | Open Energy Information

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    Aeronautica Windpower LLC Jump to: navigation, search Name: Aeronautica Windpower LLC Place: Plymouth, Massachusetts Zip: 23600 Sector: Services, Wind energy Product: String...

  5. Mohave Sun Power LLC | Open Energy Information

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    Sun Power LLC Jump to: navigation, search Name: Mohave Sun Power LLC Place: Cambridge, Massachusetts Zip: 2139 Sector: Solar Product: Project developer with solar interests in US...

  6. C Change Investments LLC | Open Energy Information

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    Investments LLC Jump to: navigation, search Name: C Change Investments, LLC Place: Cambridge, Massachusetts Zip: 2142 Product: Massachusetts-based investment company with a...

  7. Sunton United Energy LLC | Open Energy Information

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    United Energy LLC Jump to: navigation, search Name: Sunton United Energy LLC Place: Salt Lake City, Utah Sector: Renewable Energy Product: Utah-based investment company seeking...

  8. Renewable NRG LLC | Open Energy Information

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    search Name: Renewable NRG LLC Place: Woodstock, New York Zip: 12498 Product: Small manufacturing company located in New York. References: Renewable NRG LLC1 This article is a...

  9. Equinox Carbon Equities LLC | Open Energy Information

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    Equinox Carbon Equities LLC Jump to: navigation, search Name: Equinox Carbon Equities, LLC Place: Newport Beach, California Zip: 92660 Sector: Carbon Product: Investment firm...

  10. New York Biodiesel LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: New York Biodiesel LLC Place: Hamilton, Madison County, New York Product: Biodiesel producer using soybean oil as its feedstock References:...

  11. Freedom Fuels LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Freedom Fuels LLC Place: Hampton, Iowa Product: Biodiesel producer based in Hampton, Iowa. Coordinates: 37.027795, -76.345119 Show Map...

  12. Big Biodiesel LLC | Open Energy Information

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    Biodiesel LLC Jump to: navigation, search Name: Big Biodiesel LLC Place: Pulaski, Tennessee Zip: 38478 Product: Biodiesel plant developer in Pulaski, Tennessee. References: Big...

  13. Brownfield Biodiesel LLC | Open Energy Information

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    Brownfield Biodiesel LLC Jump to: navigation, search Name: Brownfield Biodiesel LLC Place: Ralls, Texas Zip: 79357 Product: Biodiesel producer in Ralls, Texas. Coordinates:...

  14. Northeast Biodiesel Company LLC | Open Energy Information

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    Company LLC Jump to: navigation, search Name: Northeast Biodiesel Company, LLC Place: Massachusetts Zip: 1301 Product: Massachusetts-based biodiesel producer and project developer....

  15. Heartland biodiesel LLC | Open Energy Information

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    biodiesel LLC Jump to: navigation, search Name: Heartland biodiesel LLC Place: Rock Port, Missouri Product: Biodiesel producer which is currently developing a 113m liter plant in...

  16. Midwest Biodiesel Producers LLC | Open Energy Information

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    Biodiesel Producers LLC Jump to: navigation, search Name: Midwest Biodiesel Producers LLC Place: Alexandria, South Dakota Zip: 57311 Product: South Dakota-based biodiesel producer....

  17. Springboard Biodiesel LLC | Open Energy Information

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    Springboard Biodiesel LLC Jump to: navigation, search Name: Springboard Biodiesel LLC Place: Chico, California Zip: 95928 Product: Provider of products and technologies for the...

  18. Biodiesel Systems LLC | Open Energy Information

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    Systems LLC Jump to: navigation, search Name: Biodiesel Systems, LLC Place: Madison, Wisconsin Zip: WI 53704 Product: The core business of Biodiesel Systems is plan, design,...

  19. East Fork Biodiesel LLC | Open Energy Information

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    Fork Biodiesel LLC Jump to: navigation, search Name: East Fork Biodiesel, LLC Place: Algona, Iowa Sector: Renewable Energy Product: Biodiesel producer and co-developer, with...

  20. Bay Biodiesel LLC | Open Energy Information

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    Biodiesel LLC Jump to: navigation, search Name: Bay Biodiesel LLC Place: Martinez, California Zip: 94553 Product: Biodiesel producers in Martinez, California. References: Bay...

  1. Avalon Solar LLC | Open Energy Information

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    Avalon Solar LLC Jump to: navigation, search Name: Avalon Solar LLC Place: Albuquerque, New Mexico Zip: 87123 Sector: Solar Product: Albuquerque-based solar project developer....

  2. MGI Electronics LLC | Open Energy Information

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    MGI Electronics LLC Jump to: navigation, search Name: MGI Electronics LLC Place: Temple, Arizona Zip: 85282 Product: US-based manufacturer of wafer transfer and PV cell handling...

  3. Malczewski Product Design LLC | Open Energy Information

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    Malczewski Product Design LLC Jump to: navigation, search Name: Malczewski Product Design LLC Place: Neenah, Wisconsin Zip: 54956 Sector: Wind energy Product: Product development...

  4. Brayton Energy LLC | Open Energy Information

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    Brayton Energy LLC Jump to: navigation, search Name: Brayton Energy LLC Place: Hampton, New Hampshire Zip: 3842 Sector: Renewable Energy Product: Brayton Energy was established in...

  5. Millennium Ethanol LLC | Open Energy Information

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    Ethanol LLC Jump to: navigation, search Name: Millennium Ethanol, LLC Place: Marion, South Dakota Zip: 57043 Product: Millennium Ethanol is a group of more than 900 South Dakotan...

  6. Center Ethanol Company LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Center Ethanol Company LLC Place: Illinois Product: Illinois based company building a 54m gallon ethanol plant in Sauget, IL. References:...

  7. Sioux River Ethanol LLC | Open Energy Information

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    River Ethanol LLC Jump to: navigation, search Name: Sioux River Ethanol LLC Place: Hudson, South Dakota Zip: 57034 Product: Farmer owned ethanol producer, Sioux River Ethanol is...

  8. Prairie Ethanol LLC | Open Energy Information

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    Ethanol LLC Jump to: navigation, search Name: Prairie Ethanol LLC Place: Loomis, South Dakota Product: Farmer owned bioethanol project development and managment team. Coordinates:...

  9. Marysville Ethanol LLC | Open Energy Information

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    Marysville Ethanol LLC Jump to: navigation, search Name: Marysville Ethanol LLC Place: Marysville, Michigan Zip: 48040 Product: Developing a 50m gallon ethanol plant in Marysville,...

  10. Badger State Ethanol LLC | Open Energy Information

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    State Ethanol LLC Jump to: navigation, search Name: Badger State Ethanol LLC Place: Monroe, Wisconsin Zip: 53566 Product: Dry-mill bioethanol producer References: Badger State...

  11. Great Valley Ethanol LLC | Open Energy Information

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    Valley Ethanol LLC Jump to: navigation, search Name: Great Valley Ethanol LLC Place: Bakersfield, California Product: Developing a 63m gallon ethanol plant in Hanford, CA...

  12. Central Indiana Ethanol LLC | Open Energy Information

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    Indiana Ethanol LLC Jump to: navigation, search Name: Central Indiana Ethanol LLC Place: Marion, Indiana Zip: 46952 Product: Ethanol producer developina a 151 mlpa plant in Marion,...

  13. Iowa Ethanol LLC | Open Energy Information

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    Ethanol LLC Jump to: navigation, search Name: Iowa Ethanol LLC Place: Hanlontown, Iowa Zip: 50451 Product: Corn-base bioethanol producer in Iowa Coordinates: 43.28456,...

  14. Kansas Ethanol LLC | Open Energy Information

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    Ethanol LLC Jump to: navigation, search Name: Kansas Ethanol LLC Place: Lyons, Kansas Zip: 67554 Product: Constructing a 55m gallon ethanol plant in Rice County, Kansas...

  15. Tall Corn Ethanol LLC | Open Energy Information

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    Tall Corn Ethanol LLC Jump to: navigation, search Name: Tall Corn Ethanol LLC Place: Coon Rapids, Iowa Zip: 50058 Product: Farmer owned bioethanol production company which owns a...

  16. Heartland Ethanol LLC | Open Energy Information

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    Ethanol LLC Jump to: navigation, search Name: Heartland Ethanol LLC Place: Knoxville, Tennessee Zip: 37929 Product: Knoxville, TN based ethanol developer. Coordinates: 35.960495,...

  17. Standard Ethanol LLC | Open Energy Information

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    Standard Ethanol LLC Place: Nebraska Product: Nebraska based ethanol producer that operates two plants References: Standard Ethanol LLC1 This article is a stub. You can help...

  18. Frontier Ethanol LLC | Open Energy Information

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    Ethanol LLC Jump to: navigation, search Name: Frontier Ethanol LLC Place: Gowrie, Iowa Product: Owner and operator of a bioethanol plant near Gowrie, Iowa. Coordinates: 42.28227,...

  19. Ethanol Grain Processors LLC | Open Energy Information

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    Processors LLC Jump to: navigation, search Name: Ethanol Grain Processors, LLC Place: Obion, Tennessee Zip: TN 38240 Product: Tennessee-based ethanol producer. Coordinates:...

  20. Kaapa Ethanol LLC | Open Energy Information

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    Kaapa Ethanol LLC Jump to: navigation, search Name: Kaapa Ethanol LLC Place: Minden, Nebraska Zip: 68959 Product: Bioethanol producer using corn as feedstock Coordinates:...

  1. Michigan Ethanol LLC | Open Energy Information

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    Ethanol LLC Jump to: navigation, search Name: Michigan Ethanol LLC Place: Caro, Michigan Zip: 48723-8804 Product: Ethanol productor in Caro, Michigan. Coordinates: 43.488705,...

  2. Siouxland Ethanol LLC | Open Energy Information

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    Ethanol LLC Jump to: navigation, search Name: Siouxland Ethanol LLC Place: Jackson, Nebraska Zip: 68743 Product: Startup hoping to build a USD 80m ethanol manufacturing plant near...

  3. Cardinal Ethanol LLC | Open Energy Information

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    Ethanol LLC Jump to: navigation, search Name: Cardinal Ethanol LLC Place: Winchester, Indiana Zip: 47394 Product: Cardinal Ethanol is in the process of building an ethanol plant in...

  4. Platinum Ethanol LLC | Open Energy Information

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    Platinum Ethanol LLC Jump to: navigation, search Name: Platinum Ethanol LLC Place: Arthut, Iowa Product: Developed a 110m gallon (416m litre) ethanol plant in Arthur, IA....

  5. North Country Ethanol LLC | Open Energy Information

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    Country Ethanol LLC Jump to: navigation, search Name: North Country Ethanol LLC Place: Rosholt, South Dakota Zip: 57260 Product: 20mmgy (75.7m litresy) ethanol producer....

  6. South Louisiana Ethanol LLC | Open Energy Information

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    South Louisiana Ethanol LLC Place: Louisiana Product: Ethanol production equipment provider. References: South Louisiana Ethanol LLC1 This article is a stub. You can help OpenEI...

  7. Show Me Ethanol LLC | Open Energy Information

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    Show Me Ethanol LLC Jump to: navigation, search Name: Show Me Ethanol, LLC Place: Carrollton, Missouri Zip: 64633 Product: Developing an ethanol project in Carrollton, Missouri....

  8. Western Ethanol Company LLC | Open Energy Information

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    Ethanol Company LLC Jump to: navigation, search Name: Western Ethanol Company LLC Place: Placentia, California Zip: 92871 Product: California-based fuel ethanol distribution and...

  9. Green Isle Energy LLC | Open Energy Information

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    Isle Energy LLC Jump to: navigation, search Name: Green Isle Energy, LLC Place: Hawaii Zip: 96744 Sector: Renewable Energy Product: Hawaiian company that monitor the performance of...

  10. Green Energy Technologies LLC | Open Energy Information

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    Technologies LLC Jump to: navigation, search Name: Green Energy Technologies LLC Place: Akron, Ohio Zip: 44333 Sector: Wind energy Product: Ohio-based micro-scale wind power...

  11. Green Light Energy LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Green Light Energy LLC Place: Reading, Pennsylvania Product: Reading-based energy management consultants. Coordinates: 43.45529,...

  12. Lousiana Green Fuels LLC | Open Energy Information

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    Lousiana Green Fuels LLC Jump to: navigation, search Name: Lousiana Green Fuels LLC Place: Louisiana Sector: Biomass Product: Developing a cellulosic biomass-to-ethanol plant in...

  13. Liberty Green Renewables LLC | Open Energy Information

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    Green Renewables LLC Jump to: navigation, search Name: Liberty Green Renewables, LLC Place: Georgetown, Indiana Zip: 47122 Sector: Biomass Product: Biomass power plant developer...

  14. Green Spark Ventures LLC | Open Energy Information

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    Spark Ventures LLC Jump to: navigation, search Name: Green Spark Ventures, LLC Place: Denver, Colorado Zip: 80203 Sector: Efficiency, Renewable Energy Product: Denver-based venture...

  15. Gerlach Green Energy LLC | Open Energy Information

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    Green Energy LLC Jump to: navigation, search Name: Gerlach Green Energy LLC Place: Gerlach, Nevada Sector: Geothermal energy Product: Gerlach has formed an exploration joint...

  16. Green Partners LLC | Open Energy Information

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    Partners LLC Jump to: navigation, search Name: Green Partners LLC Place: New York Zip: NY 10022 Sector: Efficiency, Renewable Energy Product: US-based investment firm focused on...

  17. Concentrating Technologies LLC | Open Energy Information

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    LLC Place: Owens Crossroads, Alabama Zip: 35763 Product: Developer of concentrating photovoltaic technology (CPV). References: Concentrating Technologies LLC1 This article is a...

  18. Lectrique Solaire LLC | Open Energy Information

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    Name: Lectrique Solaire LLC Sector: Solar Product: Designs and manufactures solar photovoltaic and thermal products. References: Lectrique Solaire LLC1 This article is a stub....

  19. Front Range Energy LLC | Open Energy Information

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    search Logo: Front Range Energy LLC Name: Front Range Energy LLC Address: 31375 Great Western Dr Place: Windsor, Colorado Zip: 80550 Region: Rockies Area Sector: Biofuels...

  20. EIS-0428: Mississippi Gasification, LLC, Industrial Gasification...

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    8: Mississippi Gasification, LLC, Industrial Gasification Facility in Moss Point, MS EIS-0428: Mississippi Gasification, LLC, Industrial Gasification Facility in Moss Point, MS...

  1. Advanced Bioenergy LLC | Open Energy Information

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    Bioenergy LLC Jump to: navigation, search Name: Advanced Bioenergy LLC Place: Minneapolis, Minnesota Zip: 55305 Product: Developer of the 378.5m litre pa bioethanol plant in...

  2. Alterra Bioenergy LLC | Open Energy Information

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    Bioenergy LLC Jump to: navigation, search Name: Alterra Bioenergy LLC Place: Macon, Georgia Sector: Biofuels Product: Manufacturer and distributor of biofuels. References: Alterra...

  3. Northeast Kansas Bioenergy LLC | Open Energy Information

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    Kansas Bioenergy LLC Jump to: navigation, search Name: Northeast Kansas Bioenergy LLC Place: Hiawatha, Kansas Zip: 66434 Product: Developing and integrated Bioethanol Biodiesel...

  4. Tremont Electric, LLC | Open Energy Information

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    Electric, LLC Address: 2379 Professor Ave Place: Cleveland, Ohio Zip: 44113 Sector: Bioenergy Website: www.npowerpeg.com References: Tremont Electric, LLC1 This article is a...

  5. Terranova Bioenergy LLC | Open Energy Information

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    Terranova Bioenergy LLC Jump to: navigation, search Name: Terranova Bioenergy LLC Place: Larkspur, California Zip: 94939 Sector: Biofuels Product: California-based project...

  6. Crown Renewable Energy LLC | Open Energy Information

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    Renewable Energy LLC Jump to: navigation, search Name: Crown Renewable Energy LLC Place: Union City, California Zip: 94587 Product: Buys monosilicon PV cells from JingAo....

  7. Iowa Renewable Energy LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Iowa Renewable Energy LLC Place: Washington, Iowa Product: Set up to develop a 114m-litre biodiesel facility near Washington, Iowa....

  8. Zero Emissions Leasing LLC | Open Energy Information

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    Zero Emissions Leasing LLC Jump to: navigation, search Name: Zero Emissions Leasing LLC Place: Honolulu, Hawaii Zip: 96822 Sector: Solar Product: Honolulu-based developer of solar...

  9. Chevron Technology Ventures LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Chevron Technology Ventures LLC Address: 3901 Briarpark Drive Place: Houston Zip: 77042 Region: United States Sector: Marine and Hydrokinetic...

  10. Higher Power Energy LLC | Open Energy Information

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    Higher Power Energy LLC Jump to: navigation, search Name: Higher Power Energy, LLC Place: Flower Mound, Texas Zip: 78028 Sector: Renewable Energy, Wind energy Product: Higher Power...

  11. Reunion Power LLC Vermont | Open Energy Information

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    Reunion Power LLC Vermont Jump to: navigation, search Name: Reunion Power LLC (Vermont) Place: Vermont Sector: Biomass Product: Reunion Power holds a portfolio of biomass projects...

  12. Port Asset Acquisition LLC | Open Energy Information

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    Acquisition LLC Jump to: navigation, search Name: Port Asset Acquisition LLC Place: Louisiana Product: PAA was formed to acquire a fuel terminal, tanks and land in Alexandria,...

  13. Wave Wind LLC | Open Energy Information

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    Wave Wind LLC Jump to: navigation, search Name: Wave Wind LLC Place: Sun Prairie, Wisconsin Zip: 53590 Sector: Services, Wind energy Product: Wisconsin-based wind developer and...

  14. Bio Pure Maryland LLC | Open Energy Information

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    Bio Pure Maryland LLC Jump to: navigation, search Name: Bio-Pure Maryland LLC Place: Potomac, Maryland Product: Biodiesel plant developer in Maryland. References: Bio-Pure Maryland...

  15. Point Bio Energy LLC | Open Energy Information

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    Point Bio Energy LLC Jump to: navigation, search Name: Point Bio Energy LLC Place: La Pointe, Wisconsin Product: Wisconsin-based wood fuel pellet producer. References: Point Bio...

  16. Phoenix Bio Industries LLC | Open Energy Information

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    Bio Industries LLC Jump to: navigation, search Name: Phoenix Bio-Industries LLC Place: Goshen, California Zip: 93227 Product: Ethanol producer. Coordinates: 37.988525,...

  17. Marathon Capital LLC (California) | Open Energy Information

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    Marathon Capital LLC (California) Name: Marathon Capital LLC (California) Address: 42 Miller Avenue Place: Mill Valley, California Zip: 94941 Region: Bay Area Product: Investment...

  18. Varon Lighting Group LLC | Open Energy Information

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    Varon Lighting Group LLC Jump to: navigation, search Name: Varon Lighting Group LLC Place: Chicago, Illinois Zip: 60126 Product: Chicago-based manufacturer of energy-efficient...

  19. Impact Technologies LLC | Open Energy Information

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    Technologies LLC Jump to: navigation, search Name: Impact Technologies LLC Place: Tulsa, OK Zip: 74153 Sector: Geothermal energy Product: drilling technology Phone Number:...

  20. Lone Star Transmission LLC | Open Energy Information

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    Transmission LLC Jump to: navigation, search Name: Lone Star Transmission LLC Place: Juno Beach, Florida Zip: 33408 Product: Wholly owned subsidiary of FPL Energy, developing...

  1. Green Star Energy LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Green Star Energy LLC Place: Houston, Texas Zip: 77002 Product: Houston-based producer of sugar cane processed ethanol, with additional...

  2. Global Power Solutions LLC | Open Energy Information

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    Global Power Solutions LLC Jump to: navigation, search Name: Global Power Solutions LLC Place: Colorado Zip: CO 80401 Sector: Geothermal energy Product: String representation...

  3. Solar Electric Solutions LLC | Open Energy Information

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    Electric Solutions LLC Jump to: navigation, search Name: Solar Electric Solutions, LLC Place: Woodland Hills, California Zip: 91364 Sector: Solar Product: California-based...

  4. Orion Energy LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Orion Energy LLC Place: Oakland, California Zip: 94612 Sector: Wind energy Product: Wind farm developer active in North America. Coordinates:...

  5. Blue Source LLC | Open Energy Information

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    Source LLC Jump to: navigation, search Name: Blue Source LLC Place: Salt Lake City, Utah Zip: 84121 Product: Salt Lake City-based emission offset aggregation company. References:...

  6. Southwest Wind Consulting LLC | Open Energy Information

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    Consulting LLC Jump to: navigation, search Name: Southwest Wind Consulting, LLC Place: Tyler, Minnesota Zip: MN 56178 Sector: Wind energy Product: Minnesota based wind project...

  7. Sanderson Engine Development LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Sanderson Engine Development LLC Address: 16 Tyler Road Place: Upton, Massachusetts Zip: 01568 Region: Greater Boston Area Sector:...

  8. Big River Resources LLC | Open Energy Information

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    Resources LLC Jump to: navigation, search Name: Big River Resources LLC Place: West Burlington, Iowa Zip: 52655 Product: Dry-mill bioethanol producer with a cooperative structure....

  9. Cinergy Ventures II LLC | Open Energy Information

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    Cinergy Ventures II LLC Jump to: navigation, search Name: Cinergy Ventures II, LLC Place: Cincinnati, Ohio Zip: OH 45202 Product: The venture capital arm of Cinergy Corp....

  10. Community Renewable Solutions LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Community Renewable Solutions LLC Place: Santa Barbara, California Phone Number: 805 284 9028 Website: www.communityrenewables.biz...

  11. NGEN Partners LLC | Open Energy Information

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    NGEN Partners LLC Jump to: navigation, search Name: NGEN Partners LLC Place: Santa Barbara, California Zip: 93101 Product: NGEN provides second stage venture capital funding to...

  12. Applied Ventures LLC | Open Energy Information

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    Applied Ventures LLC Name: Applied Ventures LLC Address: 3050 Bowers Avenue Place: Santa Clara, California Zip: 95054 Region: Southern CA Area Product: Venture capital. Number...

  13. Sustainable Energy Advantage LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Sustainable Energy Advantage, LLC Place: Massachusetts Zip: 1701 Sector: Renewable Energy Product: String representation "Massachusetts-b ......

  14. Heritage Sustainable Energy LLC | Open Energy Information

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    Sustainable Energy LLC Jump to: navigation, search Name: Heritage Sustainable Energy LLC Place: Traverse City, Michigan Sector: Wind energy Product: Start up wind developer in...

  15. Smiling Earth Energy LLC | Open Energy Information

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    Earth Energy LLC Place: Bakersfield, California Zip: 93314 Product: California based biodiesel producer and project developer. References: Smiling Earth Energy LLC1 This...

  16. Renewable Energy Products LLC | Open Energy Information

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    Products, LLC Place: Santa Fe Springs, California Zip: 90670 Product: Own and operate a biodiesel production facility in California. References: Renewable Energy Products, LLC1...

  17. Bio Energy Systems LLC | Open Energy Information

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    search Name: Bio-Energy Systems LLC Place: san Anselmo, California Zip: 94960 Product: Biodiesel producer in Vallejo, California. References: Bio-Energy Systems LLC1 This...

  18. Access Solar Energy LLC | Open Energy Information

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    Solar Energy LLC Jump to: navigation, search Name: Access Solar Energy LLC Place: Park CIty, Utah Zip: 84060 Sector: Renewable Energy, Solar Product: Utah-based developers of...

  19. Energetech America LLC | Open Energy Information

    Open Energy Info (EERE)

    America LLC Place: Deep River, Connecticut Product: US subsidiary of Energetech Australia. References: Energetech America LLC1 This article is a stub. You can help OpenEI...

  20. Central Texas Biofuels LLC | Open Energy Information

    Open Energy Info (EERE)

    Texas Biofuels LLC Jump to: navigation, search Name: Central Texas Biofuels LLC Place: Giddings, Texas Zip: 78942 Product: Biodiesel producer in Giddings, Texas. References:...

  1. Ultimate Biofuels LLC | Open Energy Information

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    Biofuels LLC Jump to: navigation, search Name: Ultimate Biofuels LLC Place: Ann Arbor, Michigan Zip: 48108 Product: Plans to develop sweet sorghum based ethanol plants. References:...

  2. Blackhawk Biofuels LLC | Open Energy Information

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    Blackhawk Biofuels LLC Jump to: navigation, search Name: Blackhawk Biofuels, LLC Place: Freeport, Illinois Zip: 61032 Sector: Biofuels Product: Blackhawk Biofuels was founded by a...

  3. Blue Ridge Biofuels LLC | Open Energy Information

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    Biofuels LLC Jump to: navigation, search Name: Blue Ridge Biofuels LLC Place: Asheville, North Carolina Zip: 28801 Sector: Biofuels Product: Blue Ridge Biofuels is a worker...

  4. Best Biofuels LLC | Open Energy Information

    Open Energy Info (EERE)

    Biofuels LLC Jump to: navigation, search Name: Best Biofuels LLC Place: Austin, Texas Zip: 78746 Sector: Biofuels Product: Best Biofuels is developing and commercialising vegetable...

  5. Carolina Biofuels LLC | Open Energy Information

    Open Energy Info (EERE)

    Carolina Biofuels LLC Place: North Carolina Zip: 29687 Product: Biodiesel producer based in South Carolina. References: Carolina Biofuels LLC1 This article is a stub. You can...

  6. Biofuels of Colorado LLC | Open Energy Information

    Open Energy Info (EERE)

    of Colorado LLC Jump to: navigation, search Name: Biofuels of Colorado LLC Place: Denver, Colorado Zip: 80216 Product: Biodiesel producer in Denver, Colorado. References: Biofuels...

  7. Greenleaf Biofuels LLC | Open Energy Information

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    Greenleaf Biofuels LLC Jump to: navigation, search Name: Greenleaf Biofuels LLC Place: Guilford, Connecticut Zip: 6437 Product: Connecticut-based biodiesel start-up planning to...

  8. Northwest Missouri Biofuels LLC | Open Energy Information

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    Missouri Biofuels LLC Jump to: navigation, search Name: Northwest Missouri Biofuels, LLC Place: St Joseph, Missouri Sector: Biofuels Product: Northwest Missouri Biofuels operates a...

  9. Endicott Biofuels II LLC | Open Energy Information

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    Endicott Biofuels II LLC Jump to: navigation, search Name: Endicott Biofuels II, LLC Place: Houston, Texas Zip: 77060-3235 Sector: Biofuels Product: Houston-based biofuels producer...

  10. Midwestern Biofuels LLC | Open Energy Information

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    Midwestern Biofuels LLC Jump to: navigation, search Name: Midwestern Biofuels LLC Place: South Shore, Kentucky Zip: 41175 Sector: Biomass Product: Kentucky-based biomass energy...

  11. Memphis Biofuels LLC | Open Energy Information

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    Biofuels LLC Jump to: navigation, search Name: Memphis Biofuels LLC Place: Memphis, Tennessee Product: Biodiesel start-up planning to construct a 36-million-gallon-per-year...

  12. Mercurius Biofuels LLC | Open Energy Information

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    Mercurius Biofuels LLC Jump to: navigation, search Name: Mercurius Biofuels LLC Address: 3190 Bay Road Place: Ferndale, Washington Zip: 98248 Region: Pacific Northwest Area Sector:...

  13. Butamax Advanced Biofuels LLC | Open Energy Information

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    Butamax Advanced Biofuels LLC Jump to: navigation, search Name: Butamax Advanced Biofuels LLC Place: Wilmington, Delaware Zip: 19880-0268 Sector: Biofuels Product: Delaware-based...

  14. Northern Growers LLC | Open Energy Information

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    Farmer cooperative that provides corn to Northern Lights Ethanol LLC (a 77% owned joint venture with Broin Companies). References: Northern Growers LLC1 This article is a...

  15. Safe Hydrogen LLC | Open Energy Information

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    Hydrogen LLC Jump to: navigation, search Name: Safe Hydrogen LLC Place: Lexington, Massachusetts Sector: Hydro, Hydrogen Product: Focused on hydrogen storage, through a 'slurry' of...

  16. H2 Energy LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: H2 Energy LLC Place: Hawaii Sector: Hydro, Hydrogen Product: Partnership between HiBEAM, an organisation of venture capitalists, and Sennet...

  17. Hydrogen Innovations LLC | Open Energy Information

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    Innovations LLC Jump to: navigation, search Name: Hydrogen Innovations LLC Place: Blackfoot, Idaho Zip: 83221 Product: Manufacturer of alternative fuel delivery system that cleans...

  18. Chevron Hydrogen Company LLC | Open Energy Information

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    Hydrogen Company LLC Jump to: navigation, search Name: Chevron Hydrogen Company LLC Place: California Sector: Hydro, Hydrogen Product: California-based, subsidairy of Chevron...

  19. Crownbutte Wind Power LLC | Open Energy Information

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    Crownbutte Wind Power LLC Jump to: navigation, search Name: Crownbutte Wind Power LLC Place: Mandan, North Dakota Zip: 58554 Sector: Wind energy Product: North Dakota wind power...

  20. Padoma Wind Power LLC | Open Energy Information

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    Padoma Wind Power LLC Jump to: navigation, search Name: Padoma Wind Power LLC Place: La Jolla, California Zip: 92037 Sector: Wind energy Product: A wind energy consulting and...

  1. Evergreen Wind Power LLC | Open Energy Information

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    Wind Power LLC Jump to: navigation, search Name: Evergreen Wind Power LLC Place: Bangor, Maine Zip: 4401 Sector: Wind energy Product: Formed to develop wind projects in Maine....

  2. Wind Power Associates LLC | Open Energy Information

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    Power Associates LLC Jump to: navigation, search Name: Wind Power Associates LLC Place: Goldendale, Washington State Sector: Wind energy Product: Wind farm developer and operater....

  3. Cleantech Group LLC | Open Energy Information

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    Group LLC Jump to: navigation, search Name: Cleantech Group LLC Place: Brighton, Michigan Zip: 48114 Sector: Services Product: Michigan-based cleantech consultant and parent of the...

  4. Altira Group LLC | Open Energy Information

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    Group LLC Jump to: navigation, search Name: Altira Group LLC Address: 1675 Broadway, Suite 2400 Place: Denver, Colorado Zip: 80202 Region: Rockies Area Product: Venture capital for...

  5. Current Group LLC | Open Energy Information

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    Group LLC Jump to: navigation, search Name: Current Group, LLC Place: Germantown, Maryland Zip: 20874 Sector: Services Product: Current provides electric utilities with smart grid...

  6. Fagen Engineering LLC | Open Energy Information

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    Fagen Engineering LLC Jump to: navigation, search Name: Fagen Engineering LLC Place: Granite Falls, Minnesota Zip: 56241 Product: Designs and builds ethanol production plants and...

  7. Renewable Energy Engineering LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Jump to: navigation, search Name: Renewable Energy Engineering, LLC Place: Newberg, Oregon Zip: 22700 Sector: Renewable Energy Product: Oregon-based renewable energy...

  8. Encore Renewable Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Encore Renewable Energy LLC Jump to: navigation, search Name: Encore Renewable Energy, LLC Place: Santa Barbara, California Zip: 93111 Sector: Renewable Energy Product: National...

  9. Eolian Renewable Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Eolian Renewable Energy LLC Jump to: navigation, search Name: Eolian Renewable Energy LLC Place: Portsmouth, New Hampshire Zip: 3801 Sector: Solar, Wind energy Product: New...

  10. Lincoln Renewable Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Renewable Energy LLC Jump to: navigation, search Name: Lincoln Renewable Energy LLC Place: Chicago, Illinois Zip: 60606 Sector: Solar, Wind energy Product: Chicago-based company...

  11. Renewable Energy Solutions, LLC | Open Energy Information

    Open Energy Info (EERE)

    Solutions, LLC Jump to: navigation, search Name: Renewable Energy Solutions, LLC Place: Fairfield, California Zip: 94534 Region: Bay Area Sector: Services Year Founded: 2008...

  12. Superior Renewable Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Renewable Energy LLC Jump to: navigation, search Name: Superior Renewable Energy LLC Place: Houston, Texas Zip: 77002 Sector: Renewable Energy, Wind energy Product: An independent...

  13. Outland Renewable Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Outland Renewable Energy LLC Jump to: navigation, search Name: Outland Renewable Energy, LLC Place: Chaska, Minnesota Zip: 55318 Sector: Renewable Energy Product: Outland Renewable...

  14. Grasslands Renewable Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Grasslands Renewable Energy LLC Jump to: navigation, search Name: Grasslands Renewable Energy LLC Place: Bozeman, Montana Zip: 59715 Sector: Wind energy Product: Montana-based...

  15. Virgin Bioverda LLC VBV | Open Energy Information

    Open Energy Info (EERE)

    Virgin Bioverda LLC VBV Jump to: navigation, search Name: Virgin Bioverda LLC (VBV) Place: Chicago, Illinois Product: Chicago-based JV established between Virgin & NTR to back US...

  16. Fuel Cells America LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Jump to: navigation, search Name: Fuel Cells America LLC Place: Mount Horeb, Wisconsin Zip: 53572 Product: Consulting service and commissioned fuel cell sales division....

  17. NRG Thermal LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: NRG Thermal LLC Place: Minneapolis, Minnesota Zip: 55402-2200 Product: A subsidiary of NRG Energy that specialises in district energy systems...

  18. Digilog Global Environmental LLC | Open Energy Information

    Open Energy Info (EERE)

    Digilog Global Environmental LLC Jump to: navigation, search Name: Digilog Global Environmental LLC Place: Chicago, Illinois Zip: 60606 Product: TradeLink is registered as a...

  19. Renewable Spirits LLC | Open Energy Information

    Open Energy Info (EERE)

    Spirits LLC Jump to: navigation, search Name: Renewable Spirits LLC Place: Delray Beach, Florida Zip: 33446 Product: Focused on developing citrus waste into ethanol. References:...

  20. Renewable Power Systems LLC | Open Energy Information

    Open Energy Info (EERE)

    Power Systems LLC Jump to: navigation, search Name: Renewable Power Systems, LLC Place: Averill Park, New York Zip: 12018 Sector: Solar Product: Albany, New York-based solar...

  1. American Agri diesel LLC | Open Energy Information

    Open Energy Info (EERE)

    American Agri diesel LLC Jump to: navigation, search Name: American Agri-diesel LLC Place: Colorado Springs, Colorado Product: Biodiesel producer in Colorado. References: American...

  2. American Ag Fuels LLC | Open Energy Information

    Open Energy Info (EERE)

    American Ag Fuels LLC Jump to: navigation, search Name: American Ag Fuels LLC Place: Defiance, Ohio Zip: 43512 Product: Biodiesel producer in Defiance, Ohio. References: American...

  3. American Renewables LLC | Open Energy Information

    Open Energy Info (EERE)

    Renewables LLC Jump to: navigation, search Name: American Renewables LLC Place: Boston, Massachusetts Sector: Biomass Product: US developer of biomass-fueled power generating...

  4. ECO Solutions LLC | Open Energy Information

    Open Energy Info (EERE)

    ECO Solutions LLC Jump to: navigation, search Name: ECO Solutions, LLC Place: Chatsworth, Georgia Zip: 30705 Product: ECO Solutions operates a biodiesel plant in Georgia with a...

  5. Climate Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Climate Energy LLC Jump to: navigation, search Name: Climate Energy LLC Place: Medfield, Massachusetts Zip: 2052 Product: Develops and markets micro-combined heat power systems for...

  6. EIS-0429: Indiana Gasification, LLC, Industrial Gasification...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    9: Indiana Gasification, LLC, Industrial Gasification Facility in Rockport, IN and CO2 Pipeline EIS-0429: Indiana Gasification, LLC, Industrial Gasification Facility in Rockport,...

  7. Pennamaquan Tidal Power LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Jump to: navigation, search Name: Pennamaquan Tidal Power LLC Address: 45 Memorial Circle PO Box 1058 Place: Augusta Zip: 4332 Region: United States Sector: Marine and...

  8. Prometheus Energy Services LLC | Open Energy Information

    Open Energy Info (EERE)

    Energy Services LLC Jump to: navigation, search Name: Prometheus Energy Services LLC Place: California Sector: Wind energy Product: Wind project developer, working on the Pine Tree...

  9. Northern Excellence Seed LLC | Open Energy Information

    Open Energy Info (EERE)

    Seed LLC Jump to: navigation, search Name: Northern Excellence Seed LLC Place: Williams, Minnesota Sector: Biomass Product: Producer-owned cooperative focused on...

  10. Environmental Capital Partners LLC | Open Energy Information

    Open Energy Info (EERE)

    Partners LLC Jump to: navigation, search Name: Environmental Capital Partners LLC Place: New York, New York Zip: 10017 Sector: Services Product: Private equity firm funded with USD...

  11. Environmental Capital Group LLC | Open Energy Information

    Open Energy Info (EERE)

    Group LLC Jump to: navigation, search Name: Environmental Capital Group LLC Place: Grass Valley, California Zip: 95945 Product: String representation "Environmental C ... tartup...

  12. Digital Power Capital LLC | Open Energy Information

    Open Energy Info (EERE)

    Capital LLC Jump to: navigation, search Name: Digital Power Capital LLC Place: Greenwich, Connecticut Zip: 6830 Product: A private equity firm focused on new technologies that...

  13. Conservation Capital LLC | Open Energy Information

    Open Energy Info (EERE)

    Conservation Capital LLC Jump to: navigation, search Name: Conservation Capital LLC Place: Houston, Texas Zip: 77018 Product: Houston-based land investment and consulting company...

  14. Nimes Capital LLC | Open Energy Information

    Open Energy Info (EERE)

    Nimes Capital LLC Jump to: navigation, search Name: Nimes Capital LLC Place: Los Angeles, California Zip: 90067 Product: Los Angeles-based private equity firm that provides growth...

  15. Strategic Capital Investments LLC | Open Energy Information

    Open Energy Info (EERE)

    Capital Investments LLC Jump to: navigation, search Name: Strategic Capital Investments LLC Place: Short Hills, New Jersey Zip: 7078 Product: New Jersey-based, project development...

  16. Chestnut Capital LLC | Open Energy Information

    Open Energy Info (EERE)

    Capital LLC Jump to: navigation, search Name: Chestnut Capital LLC Place: West Newton, Massachusetts Zip: 2465 Sector: Wind energy Product: Chestnut Capital is a wind energy...

  17. Marathon Capital LLC (Illinois) | Open Energy Information

    Open Energy Info (EERE)

    Logo: Marathon Capital LLC (Illinois) Name: Marathon Capital LLC (Illinois) Address: 2801 Lakeside Drive, Suite 210 Place: Bannockburn, Illinois Zip: 60015 Product: Investment...

  18. New Cycle Capital LLC | Open Energy Information

    Open Energy Info (EERE)

    Cycle Capital LLC Jump to: navigation, search Name: New Cycle Capital, LLC. Place: San Francisco, California Zip: 94103 Product: San Francisco-based venture capitalist firm...

  19. Wind Smart LLC | Open Energy Information

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    Smart LLC Jump to: navigation, search Name: Wind-Smart LLC Place: Greene, Rhode Island Zip: 2827 Sector: Wind energy Product: Rhode Island consulting company dedicated to the...

  20. Strategic Energy LLC (California) | Open Energy Information

    Open Energy Info (EERE)

    search Name: Strategic Energy LLC Place: California Phone Number: (760) 929-4735 Facebook: https:www.facebook.compagesStrategic-Energy-LLC138633162851531 Outage Hotline:...

  1. Simple Energies LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Simple Energies LLC Place: California Sector: Renewable Energy Product: California-based hybrid renewable energy project developer for...

  2. EDGE Energy LLC | Open Energy Information

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    EDGE Energy LLC Jump to: navigation, search Name: EDGE Energy LLC Place: Phoenix, Arizona Zip: 85018 Sector: Solar Product: Arizona-based solar developer focused on building...

  3. Golden Turbines LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Jump to: navigation, search Name: Golden Turbines LLC Address: 280 Meadow Ash Dr Lewis Center Zip: 43035 Region: United States Sector: Marine and Hydrokinetic Year Founded:...

  4. Solar Millennium LLC USA | Open Energy Information

    Open Energy Info (EERE)

    LLC USA Jump to: navigation, search Name: Solar Millennium LLC (USA) Place: Berkeley, California Sector: Solar Product: California-based STEG power plant developer, parabolic...

  5. AREA USA LLC | Open Energy Information

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    AREA USA LLC Jump to: navigation, search Name: AREA USA LLC Place: Washington, DC Zip: 20004 Sector: Services Product: Washington, D.C.-based division of Fabiani & Company...

  6. Norvento USA LLC | Open Energy Information

    Open Energy Info (EERE)

    USA LLC Jump to: navigation, search Name: Norvento USA LLC Place: Boston, Massachusetts Product: Boston-based engineering consultancy and division of Norvento SA. Coordinates:...

  7. LappinTech LLC | Open Energy Information

    Open Energy Info (EERE)

    "LappinTech LLC" Retrieved from "http:en.openei.orgwindex.php?titleLappinTechLLC&oldid813159" Categories: Organizations Companies Stubs Articles with outstanding TODO tasks...

  8. MARMC Enterprises LLC | Open Energy Information

    Open Energy Info (EERE)

    MARMC Enterprises LLC Jump to: navigation, search Name: MARMC Enterprises LLC Address: 722 Oak Lane Place: Thibodaux Zip: 70301 Region: United States Sector: Marine and...

  9. Exelon Enterprises Company LLC | Open Energy Information

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    Exelon Enterprises Company LLC Jump to: navigation, search Name: Exelon Enterprises Company, LLC Place: Chicago, Illinois Zip: Illinois 60680-5398 Sector: Services Product:...

  10. Free Green Energy LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Free Green Energy LLC Place: Houston, Texas Zip: 77060 Sector: Geothermal energy Product: Houston-based company formed to develop geothermal...

  11. Cp Holdings Llc | Open Energy Information

    Open Energy Info (EERE)

    Cp Holdings Llc Jump to: navigation, search Name: Cp Holdings Llc Place: Stillwater, Minnesota Zip: 55082 Sector: Carbon Product: An external carbon advisor. Coordinates:...

  12. Bison Renewable Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Renewable Energy LLC Place: Minneapolis, Minnesota Zip: 55401 Product: Developing biogas production facilities. References: Bison Renewable Energy LLC1 This article is a...

  13. NRG Power Marketing LLC | Open Energy Information

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    Marketing LLC Jump to: navigation, search Name: NRG Power Marketing LLC Address: 211 Carnegie Center Place: Princeton, New Jersey Country: United States Phone Number: 609-524-4500...

  14. Freedom Energy Solutions LLC | Open Energy Information

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    Energy Solutions LLC Jump to: navigation, search Name: Freedom Energy Solutions LLC Place: Westminster, Maryland Zip: 21157 Sector: Geothermal energy, Solar Product: Retailer and...

  15. Foresight Wind Energy LLC | Open Energy Information

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    Foresight Wind Energy LLC Jump to: navigation, search Name: Foresight Wind Energy LLC Place: San Francisco, California Zip: 94105 Sector: Wind energy Product: San Francisco-based...

  16. Midwest Wind Energy LLC | Open Energy Information

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    Energy LLC Jump to: navigation, search Name: Midwest Wind Energy LLC Place: Chicago, Illinois Zip: 60611 Sector: Wind energy Product: Wind farm developer, owner and operator....

  17. Prairie Wind Energy LLC | Open Energy Information

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    Wind Energy LLC Jump to: navigation, search Name: Prairie Wind Energy LLC Place: Lamar, Colorado Zip: 81052 Sector: Wind energy Product: Developer and owner of Prairie wind farm....

  18. Havoco Wind Energy LLC | Open Energy Information

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    Havoco Wind Energy LLC Jump to: navigation, search Name: Havoco Wind Energy LLC Place: Dallas, Texas Zip: 75206 Sector: Wind energy Product: Wind developer of Altamont Pass wind...

  19. Freedom Wind Energy LLC | Open Energy Information

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    Wind Energy LLC Jump to: navigation, search Name: Freedom Wind Energy LLC Place: Tampa, Florida Zip: 33623 Sector: Wind energy Product: Develops and manages wind farms in north...

  20. Solar America LLC | Open Energy Information

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    LLC Jump to: navigation, search Name: Solar America LLC Place: Marmora, New Jersey Zip: 8223 Sector: Solar Product: New Jersey-based company that designs and installs Solar...

  1. RES North America LLC | Open Energy Information

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    RES North America LLC Jump to: navigation, search Name: RES North America LLC Place: Portland, Oregon Zip: 97258 Sector: Wind energy Product: US development arm of RES Ltd....

  2. Wireless Environment LLC | Open Energy Information

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    Wireless Environment LLC Jump to: navigation, search Name: Wireless Environment LLC Place: Elyria, Ohio Product: Wireless Environment designs light-emitting diode lighting products...

  3. 808 Investments LLC | Open Energy Information

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    8 Investments LLC Jump to: navigation, search Name: 808 Investments LLC Place: Huntington Beach, California Zip: 92649 Sector: Solar Product: California-based boutique investment...

  4. Merrill Group LLC | Open Energy Information

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    Merrill Group LLC Jump to: navigation, search Name: Merrill Group LLC Address: PO Box 202943 Place: Denver Co Country: United States Zip: 80220 Region: Rockies Area Sector:...

  5. Ultimate Best Buy LLC | Open Energy Information

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    Ultimate Best Buy LLC Jump to: navigation, search Name: Ultimate Best Buy LLC Place: Lebanon, Ohio Country: United States Zip: 45036 Sector: Efficiency, Renewable Energy, Services,...

  6. Wind Management LLC | Open Energy Information

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    Management LLC Jump to: navigation, search Name: Wind Management LLC Place: South Yarmouth, Massachusetts Zip: 2664 Sector: Wind energy Product: Massachussets wind project...

  7. Winslow Management Company LLC | Open Energy Information

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    Management Company LLC Jump to: navigation, search Name: Winslow Management Company LLC Place: Boston, Massachusetts Zip: 2110 Product: Boston-based, environmentally focused...

  8. Vortex Hydro Energy LLC | Open Energy Information

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    Energy LLC Jump to: navigation, search Name: Vortex Hydro Energy LLC Address: 4870 West Clark Rd Suite 108 Place: Ypsilanti Zip: 48197 Region: United States Sector: Marine and...

  9. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  10. Ecomerit Technologies LLC see Dehlsen Associates LLC | Open Energy...

    Open Energy Info (EERE)

    LLC Region: United States Sector: Marine and Hydrokinetic Phone Number: 805.684.2495 X 450 Website: http: This company is listed in the Marine and Hydrokinetic Technology...

  11. Los Alamos National Security, LLC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    About » Leadership, Governance » Los Alamos National Security, LLC Los Alamos National Security, LLC (LANS) The Lab's mission is to develop and apply science and technology to ensure the safety, security, and reliability of the U.S. nuclear deterrent; reduce global threats; and solve other emerging national security and energy challenges. Contact LANS, LLC Office (505) 606-0105 Four world-class organizations team to support delivery of NNSA's mission at the Lab Los Alamos National Security,

  12. Structural and band alignment properties of Al{sub 2}O{sub 3} on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y.; Maurya, D.; Priya, S.; Patra, P. K.; Ma, A. W. K.; Aphale, A.; Macwan, I.

    2013-04-07

    Structural and band alignment properties of atomic layer Al{sub 2}O{sub 3} oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al{sub 2}O{sub 3} film and the Ge epilayer. The extracted valence band offset, {Delta}E{sub v}, values of Al{sub 2}O{sub 3} relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in {Delta}E{sub v} related to the crystallographic orientation were {Delta}E{sub V}(110)Ge>{Delta}E{sub V}(100)Ge{>=}{Delta}E{sub V}(111)Ge and the conduction band offset, {Delta}E{sub c}, related to the crystallographic orientation was {Delta}E{sub c}(111)Ge>{Delta}E{sub c}(110)Ge>{Delta}E{sub c}(100)Ge using the measured {Delta}E{sub v}, bandgap of Al{sub 2}O{sub 3} in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

  13. Geoplasma LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Place: Atlanta, Georgia Zip: 30363 Product: Geoplasma is developing plasma gasification technology. Coordinates: 33.748315, -84.391109 Show Map Loading map......

  14. Tao LLC | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: Tao LLC Place: Nashville, California Zip: 37216 Product: Start-up venture capital investment partnership with a strong interest in the cleantech...

  15. Celgard LLC | Open Energy Information

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    search Name: Celgard LLC Place: Charlotte, North Carolina Zip: 28273 Product: Celgard battery separators are polypropylene andor polyethylene electrolytic membranes used in high...

  16. GELcore LLC | Open Energy Information

    Open Energy Info (EERE)

    Name: GELcore LLC Place: Valley View, Ohio Zip: 44125-4635 Product: Manufacturer of LED lighting for signage and architecture, transportation and display lighting. GELcore was...

  17. HCE LLC | Open Energy Information

    Open Energy Info (EERE)

    search Name: HCE LLC Place: Oakton, Virginia Zip: 22124-1530 Sector: Hydro, Hydrogen Product: Has developed a new device and method for hydrogen storage. Coordinates:...

  18. Genesys LLC | Open Energy Information

    Open Energy Info (EERE)

    search Name: Genesys LLC Place: Palo Alto, California Zip: 94306 Sector: Hydro, Hydrogen Product: Focused on RET (Radiant Energy Transfer) technology for the production of...

  19. Voltaix LLC | Open Energy Information

    Open Energy Info (EERE)

    silicon, germanium and boron, and its customers are primarily manufacturers of solar cells and semiconductors. References: Voltaix, LLC1 This article is a stub. You...

  20. QER- Comment of Bridger LLC

    Broader source: Energy.gov [DOE]

    Attn: Quadrennial Energy Review Task Force Task Force: Please find attached written comments by Bridger LLC for the Quadrennial Energy Review Report.

  1. EA-212-D Coral Power, LLC | Department of Energy

    Energy Savers [EERE]

    -D Coral Power, LLC EA-212-D Coral Power, LLC Order rescinding the authorization of Coral Power, LLC to export electric energy to Mexico. PDF icon EA-212-D Coral Power, LLC More Documents & Publications EA-212-C Coral Power, LLC Application to export electric energy OE Docket No. EA-212-C Coral Power, LLC EA-213-A Coral Power, LLC

  2. Annual Benefits Statement, PIA, Bechtel Jacobs Company, LLC | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Annual Benefits Statement, PIA, Bechtel Jacobs Company, LLC Annual Benefits Statement, PIA, Bechtel Jacobs Company, LLC Annual Benefits Statement, PIA, Bechtel Jacobs Company, LLC PDF icon Annual Benefits Statement, PIA, Bechtel Jacobs Company, LLC More Documents & Publications Medgate, PIA, Bechtel Jacobs Company, LLC Electronic Document Management System PIA, BechtelJacobs Company, LLC Oracle Financials PIA, Bechtel Jacobs Company, LLC

  3. Oracle Financials PIA, Bechtel Jacobs Company, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Oracle Financials PIA, Bechtel Jacobs Company, LLC Oracle Financials PIA, Bechtel Jacobs Company, LLC Oracle Financials PIA, Bechtel Jacobs Company, LLC PDF icon Oracle Financials PIA, Bechtel Jacobs Company, LLC More Documents & Publications Medgate, PIA, Bechtel Jacobs Company, LLC Electronic Document Management System PIA, BechtelJacobs Company, LLC Annual Benefits Statement, PIA, Bechtel Jacobs Company, LLC

  4. P Stub Online, Bechtel Jacobs Company, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    P Stub Online, Bechtel Jacobs Company, LLC P Stub Online, Bechtel Jacobs Company, LLC P Stub Online, Bechtel Jacobs Company, LLC PDF icon P Stub Online, Bechtel Jacobs Company, LLC More Documents & Publications Medgate, PIA, Bechtel Jacobs Company, LLC Electronic Document Management System PIA, BechtelJacobs Company, LLC Oracle Financials PIA, Bechtel Jacobs Company, LLC

  5. Insurance Eligibility, PIA, Bechtel Jacobs Company, LLC | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Insurance Eligibility, PIA, Bechtel Jacobs Company, LLC Insurance Eligibility, PIA, Bechtel Jacobs Company, LLC Insurance Eligibility, PIA, Bechtel Jacobs Company, LLC PDF icon Insurance Eligibility, PIA, Bechtel Jacobs Company, LLC More Documents & Publications Medgate, PIA, Bechtel Jacobs Company, LLC Electronic Document Management System PIA, BechtelJacobs Company, LLC Oracle Financials PIA, Bechtel Jacobs Company, LLC

  6. Legacy Claims, PIA, Bechtel Jacobs Company, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Legacy Claims, PIA, Bechtel Jacobs Company, LLC Legacy Claims, PIA, Bechtel Jacobs Company, LLC Legacy Claims, PIA, Bechtel Jacobs Company, LLC PDF icon Legacy Claims, PIA, Bechtel Jacobs Company, LLC More Documents & Publications Medgate, PIA, Bechtel Jacobs Company, LLC Electronic Document Management System PIA, BechtelJacobs Company, LLC Oracle Financials PIA, Bechtel Jacobs Company, LLC

  7. Medgate, PIA, Bechtel Jacobs Company, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Medgate, PIA, Bechtel Jacobs Company, LLC Medgate, PIA, Bechtel Jacobs Company, LLC Medgate, PIA, Bechtel Jacobs Company, LLC PDF icon Medgate, PIA, Bechtel Jacobs Company, LLC More Documents & Publications Electronic Document Management System PIA, BechtelJacobs Company, LLC Oracle Financials PIA, Bechtel Jacobs Company, LLC Annual Benefits Statement, PIA, Bechtel Jacobs Company, LLC

  8. Sub-250?nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO{sub 2}/SiO{sub 2} dielectric mirrors

    SciTech Connect (OSTI)

    Kao, Tsung-Ting; Liu, Yuh-Shiuan; Mahbub Satter, Md.; Li, Xiao-Hang; Lochner, Zachary; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Shen, Shyh-Chiang Ryou, Jae-Hyun; Fischer, Alec M.; Wei, Yong; Xie, Hongen; Ponce, Fernando A.

    2013-11-18

    We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al{sub x}Ga{sub 1?x}N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250?kW/cm{sup 2}. After employing high-reflectivity SiO{sub 2}/HfO{sub 2} dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180?kW/cm{sup 2}. The internal loss and threshold modal gain can be calculated as 2?cm{sup ?1} and 10.9?cm{sup ?1}, respectively.

  9. POET Project Liberty, LLC

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    POET Project LIBERTY, LLC (formerly Broin Companies) Corporate HQ: Sioux Falls, South Dakota Facility Location: Emmetsburg, Palo Alto County, Iowa Description: This 21-year old Midwest-based company is the nation's largest ethanol producer, which currently operates 26 production facilities in the United States. The company produces and markets more than 1.5 billion gallons of ethanol annually. Their proposal will demonstrate the benefits of integrating an innovative lignocellulose-to- ethanol

  10. Adrian Energy Associates LLC Biomass Facility | Open Energy Informatio...

    Open Energy Info (EERE)

    Adrian Energy Associates LLC Biomass Facility Jump to: navigation, search Name Adrian Energy Associates LLC Biomass Facility Facility Adrian Energy Associates LLC Sector Biomass...

  11. Lyonsdale Biomass LLC Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    LLC Biomass Facility Jump to: navigation, search Name Lyonsdale Biomass LLC Biomass Facility Facility Lyonsdale Biomass LLC Sector Biomass Location Lewis County, New York...

  12. Avon Energy Partners LLC Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    Avon Energy Partners LLC Biomass Facility Jump to: navigation, search Name Avon Energy Partners LLC Biomass Facility Facility Avon Energy Partners LLC Sector Biomass Facility Type...

  13. Brickyard Energy Partners LLC Biomass Facility | Open Energy...

    Open Energy Info (EERE)

    Brickyard Energy Partners LLC Biomass Facility Jump to: navigation, search Name Brickyard Energy Partners LLC Biomass Facility Facility Brickyard Energy Partners LLC Sector Biomass...

  14. EA-249-A Exelon Generation Company LLC | Department of Energy

    Energy Savers [EERE]

    Generation Company LLC Order authorizing Exelon Generation Company LLC to export electric energy to Canada. EA-249-A Exelon Generation Company LLC More Documents &...

  15. Midwest Renewable Energy Projects LLC | Open Energy Information

    Open Energy Info (EERE)

    Projects LLC Jump to: navigation, search Name: Midwest Renewable Energy Projects LLC Place: Florida Zip: FL 33408 Sector: Renewable Energy, Wind energy Product: MRE Projects LLC is...

  16. Windy City Renewable Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Windy City Renewable Energy LLC Jump to: navigation, search Logo: Windy City Renewable Energy LLC Name: Windy City Renewable Energy LLC Place: Chicago, Illinois Zip: 60606 Sector:...

  17. EA-341 Photovoltaic Technologies, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1 Photovoltaic Technologies, LLC EA-341 Photovoltaic Technologies, LLC Order authorizing Photovoltaic Technologies, LLC to export electric energy to Mexico PDF icon EA- 341 ...

  18. Wind Energy Systems Technology LLC | Open Energy Information

    Open Energy Info (EERE)

    Technology LLC Jump to: navigation, search Logo: Wind Energy Systems Technology LLC Name: Wind Energy Systems Technology LLC Address: 17350 State Highway 249 Place: Houston, Texas...

  19. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

    SciTech Connect (OSTI)

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-02-23

    This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600?nm, 400?nm, and 200?nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5?nm, In{sub 0.17}Al{sub 0.83}N1.25?nm, GaN1.5?nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10?}cm{sup ?2} to 10{sup 8?}cm{sup ?2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89?nm, 1.2?nm, and 1.45?nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.

  20. Cation-poor complex metallic alloys in Ba(Eu)–Au–Al(Ga) systems: Identifying the keys that control structural arrangements and atom distributions at the atomic level

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Smetana, Volodymyr; Steinberg, Simon; Mudryk, Yaroslav; Pecharsky, Vitalij; Miller, Gordon J.; Mudring, Anja -Verena

    2015-10-19

    Four complex intermetallic compounds BaAu6±xGa6±y (x = 1, y = 0.9) (I), BaAu6±xAl6±y (x = 0.9, y = 0.6) (II), EuAu6.2Ga5.8 (III), and EuAu6.1Al5.9 (IV) have been synthesized, and their structures and homogeneity ranges have been determined by single crystal and powder X-ray diffraction. Whereas I and II originate from the NaZn13-type structure (cF104–112, Fm3C), III (tP52, P4/nbm) is derived from the tetragonal Ce2Ni17Si9-type, and IV (oP104, Pbcm) crystallizes in a new orthorhombic structure type. Both I and II feature formally anionic networks with completely mixed site occupation by Au and triel (Tr = Al, Ga) atoms, while a successivemore » decrease of local symmetry from the parental structures of I and II to III and, ultimately, to IV correlates with increasing separation of Au and Tr on individual crystallographic sites. Density functional theory-based calculations were employed to determine the crystallographic site preferences of Au and the respective triel element to elucidate reasons for the atom distribution (“coloring scheme”). Chemical bonding analyses for two different “EuAu6Tr6” models reveal maximization of the number of heteroatomic Au–Tr bonds as the driving force for atom organization. The Fermi levels fall in broad pseudogaps for both models allowing some electronic flexibility. Spin-polarized band structure calculations on the “EuAu6Tr6” models hint to singlet ground states for europium and long-range magnetic coupling for both EuAu6.2Ga5.8 (III) and EuAu6.1Al5.9 (IV). This is substantiated by experimental evidence because both compounds show nearly identical magnetic behavior with ferromagnetic transitions at TC = 6 K and net magnetic moments of 7.35 μB/f.u. at 2 K. As a result, the effective moments of 8.3 μB/f.u., determined from Curie–Weiss fits, point to divalent oxidation states for europium in both III and IV.« less

  1. RSE Pulp & Chemical, LLC (Subsidiary of Red Shield Environmental, LLC) |

    Energy Savers [EERE]

    Department of Energy RSE Pulp & Chemical, LLC (Subsidiary of Red Shield Environmental, LLC) RSE Pulp & Chemical, LLC (Subsidiary of Red Shield Environmental, LLC) A fact sheet detailling a proposal of a biorefinery facility in an existing pulp mill to demonstrate the production of cellulosic ethanol from lignocellulosic (wood) extract. PDF icon RSE Pulp & Chemical, LLC (Subsidiary of Red Shield Environmental, LLC) More Documents & Publications Pacific Ethanol, Inc EA-1888:

  2. EA-225 Split Rock Energy LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    5 Split Rock Energy LLC EA-225 Split Rock Energy LLC Order authorizing Split Rock Energy LLC to export electric energy to Canada. PDF icon EA-225 Split Rock Energy LLC

  3. Mission Support Alliance, LLC

    Office of Environmental Management (EM)

    December 3, 2015 Mr. William Johnson President Mission Support Alliance, LLC 2490 Garlick Boulevard P.O. Box 650 Richland, Washington 99352 WEL-2015-07 Dear Mr. Johnson: The Office of Enterprise Assessments' Office of Enforcement has completed an evaluation of an incident involving a rigger injured during a crane re-spooling operation, as reported into the Department of Energy's (DOE) Occurrence Reporting and Processing System under EM-RL--MSC-FSS-2015-0002 on May 11, 2015. On May 1, 2015, a

  4. EA-209-A Cargill-Alliant, LLC | Department of Energy

    Energy Savers [EERE]

    09-A Cargill-Alliant, LLC EA-209-A Cargill-Alliant, LLC Order authorizing A Cargill-Alliant, LLC to export electric energy to Canada. PDF icon EA-209-A Cargill-Alliant, LLC More Documents & Publications EA-209 Cargill-Alliant, LLC EA-209-C Cargill Power Markets LLC EA-209-B Cargill Power Markets

  5. EA-212-A Coral Power, LLC | Department of Energy

    Energy Savers [EERE]

    -A Coral Power, LLC EA-212-A Coral Power, LLC Order authorizing Coral Power, LLC to export electric energy to Mexico. PDF icon EA-212-A Coral Power, LLC More Documents & Publications EA-212 Coral Power, LLC EA-167 PG&E Energy Trading-Power, L.P EA-166 Duke Energy Trading and Marketing, L.L.C

  6. EA-213-A Coral Power, LLC | Department of Energy

    Energy Savers [EERE]

    -A Coral Power, LLC EA-213-A Coral Power, LLC Order authorizing Coral Power, LLC to export electric energy to Canada. PDF icon EA-213-A Coral Power, LLC More Documents & Publications EA-212-C Coral Power, LLC EA-212-D Coral Power, LLC EA-253-A Coral Canada US

  7. EA-293-A Coral Energy Management, LLC | Department of Energy

    Energy Savers [EERE]

    3-A Coral Energy Management, LLC EA-293-A Coral Energy Management, LLC Order authorizing Coral Energy Management, LLC to export electric energy to Canada PDF icon EA-293-A Coral Energy Management, LLC More Documents & Publications EA-213-A Coral Power, LLC EA-212-C Coral Power, LLC EA-253-A Coral Canada US Inc

  8. EA-346 Credit Suisse Energy LLC - Canada | Department of Energy

    Energy Savers [EERE]

    Canada EA-346 Credit Suisse Energy LLC - Canada Order authorizing Credit Suisse Energy LLC to export electric energy to Canada PDF icon EA-346 Credit Suisse Energy LLC More Documents & Publications EA-346 Credit Suisse Energy LLC - Mexico EA-344 Twin Cities Power-Canada, LLC EA-354 Endure Energy, L.L.C.

  9. EA-346 Credit Suisse Energy LLC - Mexico | Department of Energy

    Energy Savers [EERE]

    Mexico EA-346 Credit Suisse Energy LLC - Mexico Order authorizing Credit Suisse Energy LLC to export electric energy to Mexico PDF icon EA-346 Credit Suisse Energy LLC More Documents & Publications EA-346 Credit Suisse Energy LLC - Canada EA-212-C Coral Power, LLC EA-341 Photovoltaic Technologies, LLC

  10. EA-358 Twin Cities Energy, LLC | Department of Energy

    Energy Savers [EERE]

    8 Twin Cities Energy, LLC EA-358 Twin Cities Energy, LLC Order authorizing Twin Cities Energy, LLC to export electric energy to Canada PDF icon EA-358 Twin Cities Energy, LLC More Documents & Publications Application to Export Electric Energy OE Docket No. EA-358 Twin Cities Energy, LLC EA-344 Twin Cities Power-Canada, LLC EA-344-A Twin Cities Power

  11. PENSION ACTUARIAL APPLICATION, Bechtel Jacobs Company, LLC | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy PENSION ACTUARIAL APPLICATION, Bechtel Jacobs Company, LLC PENSION ACTUARIAL APPLICATION, Bechtel Jacobs Company, LLC PENSION ACTUARIAL APPLICATION, Bechtel Jacobs Company, LLC PDF icon PENSION ACTUARIAL APPLICATION, Bechtel Jacobs Company, LLC More Documents & Publications Pension Estimate System PIA, Bechtel Jacobs Company, LLC Medgate, PIA, Bechtel Jacobs Company, LLC Electronic Document Management System PIA, BechtelJacobs

  12. Pension Estimate System PIA, Bechtel Jacobs Company, LLC | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Pension Estimate System PIA, Bechtel Jacobs Company, LLC Pension Estimate System PIA, Bechtel Jacobs Company, LLC Pension Estimate System PIA, Bechtel Jacobs Company, LLC PDF icon Pension Estimate System PIA, Bechtel Jacobs Company, LLC More Documents & Publications Electronic Document Management System PIA, BechtelJacobs Company, LLC Dosimetry Records System PIA, bechtel Jacobs Company, LLC Medgate, PIA, Bechtel Jacobs

  13. EA-212-C Coral Power, LLC | Department of Energy

    Office of Environmental Management (EM)

    12-C Coral Power, LLC EA-212-C Coral Power, LLC Order authorizing Coral Power, LLC to export electric energy to Mexico. PDF icon EA-212-C Coral Power, LLC More Documents & Publications Application to export electric energy OE Docket No. EA-212-C Coral Power, LLC EA-212-D Coral Power, LLC EA-213-A Coral Power,

  14. Spinworks LLC | Open Energy Information

    Open Energy Info (EERE)

    Product: Spinworks is the exclusive producer of radiant tube inserts made of Silicon- Graphite. References: Spinworks LLC1 This article is a stub. You can help OpenEI by...

  15. Sopogy LLC | Open Energy Information

    Open Energy Info (EERE)

    STEG projects and equipment and maker of solar thermal process heat and solar air-conditioning systems. References: Sopogy LLC1 This article is a stub. You can help OpenEI by...

  16. Alte LLC | Open Energy Information

    Open Energy Info (EERE)

    Sector: Vehicles Product: Michigan-based manufacturer of powertrains for plug-in hybrid electric vehicles. References: Alte LLC1 This article is a stub. You can help OpenEI by...

  17. Hythane LLC | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: Hythane LLC Place: Denver, Colorado Sector: Hydro, Hydrogen Product: Produces a fuel system which runs on 'Hythane' - a 50:50 blend of natural...

  18. Sunrgi LLC | Open Energy Information

    Open Energy Info (EERE)

    A Los-Angeles based CPV company that claims to intensify sunlight at extremely high concentration, using passive cooling. References: Sunrgi LLC1 This article is a stub. You can...

  19. Order 3727: EMERA CNG, LLC

    Broader source: Energy.gov [DOE]

    On October 19, 2015, the Energy Department announced final authorization to Emera CNG, LLC (Emera) to export domestically produced compressed natural gas to countries that do not have a Free Trade Agreement with the United States.

  20. Cyclocean LLC | Open Energy Information

    Open Energy Info (EERE)

    search Name: Cyclocean LLC Address: 3000 Par Drive Region: United States Sector: Marine and Hydrokinetic Phone Number: 561-317-1446 Website: www.cyclocean.com This company is...

  1. Alliance for Sustainable Energy, LLC

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    27, 2013 Dr. Dan Arvizu, President Alliance for Sustainable Energy, LLC National Renewable Energy Laboratory 15013 Denver West Parkway Golden, Colorado 80401 WEL-2013-04 Dear Dr. Arvizu: The Office of Health, Safety and Security's Office of Enforcement and Oversight evaluated a drum rupture and flash event that occurred on February 8, 2013, at the National Renewable Energy Laboratory (NREL) Thermochemical User Facility (TCUF). Alliance for Sustainable Energy, LLC (Alliance) manages and operates

  2. Magic Wind LLC | Open Energy Information

    Open Energy Info (EERE)

    Wind LLC Jump to: navigation, search Name: Magic Wind, LLC Place: Buhl, Idaho Zip: 83316 Sector: Wind energy Product: A small Idaho-based limited liability company developing the...

  3. PJM Interconnection, LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Jump to: navigation, search Name: PJM Interconnection, LLC Place: Norristown, PA References: SGIC1 This article is a stub. You can help OpenEI by expanding it. PJM...

  4. US Wind Force LLC | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: US Wind Force LLC Place: Wexford, Pennsylvania Zip: PA 15090-9 Sector: Wind energy Product: US Wind Force, LLC is an independent, privately...

  5. Agri Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Name: Agri-Energy LLC Place: Luverne, Minnesota Zip: 56156 Product: Corn trader and bioethanol producer. References: Agri-Energy LLC1 This article is a stub. You can help OpenEI...

  6. Western NY Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    search Name: Western NY Energy LLC Place: Mount Morris, New York Zip: 14510 Product: Bioethanol producer. References: Western NY Energy LLC1 This article is a stub. You can help...

  7. Victory Renewable Fuels LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Jump to: navigation, search Name: Victory Renewable Fuels LLC Place: Iowa Zip: 51242 Product: Plans to develop a 113.7m litre biodiesel and multiple feedstock facility in Iowa....

  8. S W Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Energy LLC Jump to: navigation, search Name: S.W. Energy, LLC Place: Elk River, Minnesota Zip: 55330 Product: Minnesota-based ethanol project developer. References: S.W. Energy,...

  9. Clean Burn Fuels LLC | Open Energy Information

    Open Energy Info (EERE)

    Burn Fuels LLC Jump to: navigation, search Name: Clean Burn Fuels LLC Place: Raleigh, North Carolina Zip: 27603 Sector: Biofuels Product: Biofuels developer planning to build a 60m...

  10. Evergreen Renewables LLC | Open Energy Information

    Open Energy Info (EERE)

    Evergreen Renewables LLC Place: Indiana Zip: P.O. Box 565 Product: Biodiesel producer which runs a 19m liter plant in Hammond, Indiana. References: Evergreen Renewables LLC1 This...

  11. Wyobraska Biodiesel LLC | Open Energy Information

    Open Energy Info (EERE)

    Wyobraska Biodiesel LLC Jump to: navigation, search Name: Wyobraska Biodiesel LLC Place: Scottsbluff, Nebraska Zip: 69361 Product: Wyobraska operates a 37.9mLpa (10m gallon)...

  12. Tri State Biodiesel LLC | Open Energy Information

    Open Energy Info (EERE)

    Biodiesel LLC Jump to: navigation, search Name: Tri-State Biodiesel LLC Place: New York, New York Zip: 10009 Product: A New York-based producer and retailer of biodiesel....

  13. SolarAire LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Place: Folsom, California Sector: Solar Product: Developing a solar thermal air conditioning unit. References: SolarAire LLC1 This article is a stub. You can help OpenEI by...

  14. Northern Lights Ethanol LLC | Open Energy Information

    Open Energy Info (EERE)

    Lights Ethanol LLC Jump to: navigation, search Name: Northern Lights Ethanol LLC Place: Big Stone City, South Dakota Zip: 57216 Product: 75mmgy (283.9m litresy) ethanol producer....

  15. US Ethanol LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Place: Vancouver, Washington State Zip: 98660 Product: Ethanol producer in the north-west. References: US Ethanol LLC1 This article is a stub. You can help OpenEI by...

  16. Tharaldson Ethanol LLC | Open Energy Information

    Open Energy Info (EERE)

    Tharaldson Ethanol LLC Jump to: navigation, search Name: Tharaldson Ethanol LLC Place: Casselton, North Dakota Zip: 58012 Product: Owner of a USD 200m 120m-gallon ethanol plant in...

  17. United Ethanol LLC | Open Energy Information

    Open Energy Info (EERE)

    United Ethanol LLC Place: Wisconsin Product: Developed a 43m gallon ethanol plant in Milton, Wisconsin. References: United Ethanol LLC1 This article is a stub. You can help...

  18. Horizon Ethanol LLC | Open Energy Information

    Open Energy Info (EERE)

    Ethanol LLC Jump to: navigation, search Name: Horizon Ethanol LLC Place: Jewell, Iowa Zip: 50130 Product: 60mmgy (227.1m litrey) ethanol producers in Jewell, Iowa. Coordinates:...

  19. JH Kelly LLC Ethanol | Open Energy Information

    Open Energy Info (EERE)

    JH Kelly LLC Ethanol Jump to: navigation, search Name: JH Kelly LLC Ethanol Place: Longview, Washington State Zip: 98632 Product: A joint venture company between JH Kelly and and...

  20. Farmers Ethanol LLC | Open Energy Information

    Open Energy Info (EERE)

    Ethanol LLC Jump to: navigation, search Name: Farmers' Ethanol LLC Place: Adamsville, Ohio Zip: OH 43802 Product: An association of farmers registered on July 12,2002 with a goal...

  1. Duquesne Light Energy, LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Jump to: navigation, search Name: Duquesne Light Energy, LLC Place: Pennsylvania Phone Number: (877) 393-1130 Website: www.duqenergy.com Outage Hotline: (877) 393-1130...

  2. SmallFoot LLC | Open Energy Information

    Open Energy Info (EERE)

    SmallFoot LLC Place: Boulder, Colorado Product: Colorado-based developer of wireless demand control devices for the small commercial market. References: SmallFoot LLC1 This...

  3. Ohio Green Wind, LLC | Open Energy Information

    Open Energy Info (EERE)

    Wind, LLC Jump to: navigation, search Name: Ohio Green Wind, LLC Address: 5126 S County Road 25A Place: Tipp City, Ohio Zip: 45371 Sector: Efficiency, Geothermal energy, Hydro,...

  4. Felton Bay Logistics, LLC | Open Energy Information

    Open Energy Info (EERE)

    Logistics, LLC1 This article is a stub. You can help OpenEI by expanding it. Felton Bay Logistics, LLC is a company based in San Diego, California. Felton Bay offers training,...

  5. ITC Great Plains, LLC | Open Energy Information

    Open Energy Info (EERE)

    ITC Great Plains, LLC Jump to: navigation, search Name: ITC Great Plains, LLC Place: Kansas Phone Number: Topeka (785) 783-2226 or Dodge City (620) 371-6534 or (785) 783-2226...

  6. EDrive Systems LLC | Open Energy Information

    Open Energy Info (EERE)

    EDrive Systems LLC Place: Los Angeles, California Product: Developer of a plug-in and battery kit for the Toyota Prius. References: EDrive Systems LLC1 This article is a stub....

  7. Young Energy, LLC | Open Energy Information

    Open Energy Info (EERE)

    Energy, LLC Jump to: navigation, search Name: Young Energy, LLC Place: Texas Phone Number: 888-963-9363 Website: www.puc.texas.govindustryele Outage Hotline: 888-963-9363...

  8. Bio Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Jump to: navigation, search Name: Bio-Energy LLC Place: Independence, Ohio Zip: 44131 Product: Bio-Energy founded at the beginning of the year has been commissioned its first...

  9. New Bio LLC | Open Energy Information

    Open Energy Info (EERE)

    Bio LLC Jump to: navigation, search Name: New Bio LLC Place: Eden Prarie, Minnesota Zip: MN 55344-3446 Sector: Biomass Product: Working on the development and commercialization of...

  10. Solar Star NAFB LLC | Open Energy Information

    Open Energy Info (EERE)

    NAFB LLC Jump to: navigation, search Name: Solar Star NAFB LLC Place: Nevada Phone Number: (702) 643-8097 Outage Hotline: (702) 643-8097 References: EIA Form EIA-861 Final Data...

  11. Alliance Star Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Star Energy LLC Jump to: navigation, search Name: Alliance Star Energy LLC Place: California Phone Number: (619) 574-0527 Outage Hotline: (619) 574-0527 References: EIA Form...

  12. Mobius Risk Group LLC | Open Energy Information

    Open Energy Info (EERE)

    Mobius Risk Group LLC Jump to: navigation, search Name: Mobius Risk Group LLC Place: Houston, Texas Zip: TX 77056 Product: A risk advisor to energy-consuming companies, utilities...

  13. Tres Amigas LLC | Open Energy Information

    Open Energy Info (EERE)

    Amigas LLC Jump to: navigation, search Name: Tres Amigas LLC Place: Santa Fe, New Mexico Zip: 87501-2643 Product: New Mexico-based merchant transmission company. References: Tres...

  14. R3 Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    R3 Energy LLC Jump to: navigation, search Name: R3 Energy LLC Place: Topeka, Kansas Zip: 66604 Product: Kansas-based biodiesel producer. Coordinates: 39.049285, -95.671184 Show...

  15. Synergy Biofuels LLC | Open Energy Information

    Open Energy Info (EERE)

    Biofuels LLC Jump to: navigation, search Name: Synergy Biofuels LLC Place: Dryden, Virginia Zip: 24243 Product: Developing a 3m gallon (11.4m litre) biodiesel facility in Lee...

  16. E Biofuels LLC | Open Energy Information

    Open Energy Info (EERE)

    Biofuels LLC Jump to: navigation, search Name: E-Biofuels LLC Place: Fishers, Indiana Zip: 46038 Product: Indiana-based biodiesel producer. Coordinates: 43.01397, -77.471829...

  17. EPG Fuel Cell LLc | Open Energy Information

    Open Energy Info (EERE)

    EPG Fuel Cell LLc Jump to: navigation, search Name: EPG Fuel Cell LLc Place: Maryland Product: 50-50 JV between Catamount Energy and Elemental Power. References: EPG Fuel Cell...

  18. Langford Wind Power LLC | Open Energy Information

    Open Energy Info (EERE)

    Power LLC Jump to: navigation, search Name: Langford Wind Power LLC Place: Texas Phone Number: 512-691-6261 or 512-585-0450 Website: www.puc.texas.govindustryele Outage Hotline:...

  19. Cielo Wind Power LLC | Open Energy Information

    Open Energy Info (EERE)

    Power LLC Jump to: navigation, search Name: Cielo Wind Power LLC Place: Austin, Texas Zip: 78701 2459 Sector: Wind energy Product: Currently the largest wind power developer in the...

  20. AeroCity LLC | Open Energy Information

    Open Energy Info (EERE)

    Name: AeroCity LLC Place: Lake Katrine, New York Sector: Wind energy Product: Micro urban wind turbine maker based in New York State. References: AeroCity LLC1 This article...