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We encourage you to perform a real-time search of NLEBeta
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1

Investigating Extreme Ultraviolet Lithography Mask Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Investigating Extreme Ultraviolet Lithography Mask Defects Print Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper semiconductors. EUV lithography relies on specialized lenses made of curved mirrors with reflective coatings called multilayers to print patterns with high resolution. One special flat mirror called a mask is particularly sensitive to even the smallest imperfections. To better detect and characterize mask defects, scientists at Berkeley Lab worked with SEMATECH, an international semiconductor industry consortium, to create a unique Fresnel zone-plate microscope on Advanced Light Source Beamline 11.3.2 called the SEMATECH Berkeley Actinic Inspection Tool (AIT).

2

Investigating Extreme Ultraviolet Lithography Mask Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Investigating Extreme Investigating Extreme Ultraviolet Lithography Mask Defects Investigating Extreme Ultraviolet Lithography Mask Defects Print Wednesday, 28 July 2010 00:00 Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper semiconductors. EUV lithography relies on specialized lenses made of curved mirrors with reflective coatings called multilayers to print patterns with high resolution. One special flat mirror called a mask is particularly sensitive to even the smallest imperfections. To better detect and characterize mask defects, scientists at Berkeley Lab worked with SEMATECH, an international semiconductor industry consortium, to create a unique Fresnel zone-plate microscope on Advanced Light Source Beamline 11.3.2 called the SEMATECH Berkeley Actinic Inspection Tool (AIT).

3

Investigating Extreme Ultraviolet Lithography Mask Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Investigating Extreme Ultraviolet Lithography Mask Defects Print Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper semiconductors. EUV lithography relies on specialized lenses made of curved mirrors with reflective coatings called multilayers to print patterns with high resolution. One special flat mirror called a mask is particularly sensitive to even the smallest imperfections. To better detect and characterize mask defects, scientists at Berkeley Lab worked with SEMATECH, an international semiconductor industry consortium, to create a unique Fresnel zone-plate microscope on Advanced Light Source Beamline 11.3.2 called the SEMATECH Berkeley Actinic Inspection Tool (AIT).

4

Reflective masks for extreme ultraviolet lithography  

SciTech Connect (OSTI)

Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 {mu}m wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

Nguyen, Khanh Bao

1994-05-01T23:59:59.000Z

5

Method and apparatus for inspecting reflection masks for defects  

DOE Patents [OSTI]

An at-wavelength system for extreme ultraviolet lithography mask blank defect detection is provided. When a focused beam of wavelength 13 nm is incident on a defective region of a mask blank, three possible phenomena can occur. The defect will induce an intensity reduction in the specularly reflected beam, scatter incoming photons into an off-specular direction, and change the amplitude and phase of the electric field at the surface which can be monitored through the change in the photoemission current. The magnitude of these changes will depend on the incident beam size, and the nature, extent and size of the defect. Inspection of the mask blank is performed by scanning the mask blank with 13 nm light focused to a spot a few .mu.m in diameter, while measuring the reflected beam intensity (bright field detection), the scattered beam intensity (dark-field detection) and/or the change in the photoemission current.

Bokor, Jeffrey (Oakland, CA); Lin, Yun (Berkeley, CA)

2003-04-29T23:59:59.000Z

6

Vitreous carbon mask substrate for X-ray lithography  

DOE Patents [OSTI]

The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

Aigeldinger, Georg (Livermore, CA); Skala, Dawn M. (Fremont, CA); Griffiths, Stewart K. (Livermore, CA); Talin, Albert Alec (Livermore, CA); Losey, Matthew W. (Livermore, CA); Yang, Chu-Yeu Peter (Dublin, CA)

2009-10-27T23:59:59.000Z

7

Actinic imaging of native and programmed defects on a full-field mask , K. A. Goldberga  

E-Print Network [OSTI]

c Global Foundries Dresden Module One. KG Wilschdorfer Landstr. 101, 01109 Dresden, Germany technology node. This is especially true for EUV lithography where the mask, the absorber pattern presented previously [3] separated the defects into the following categories: cleaning residue, particle

8

Atom Nano-lithography with Multi-layer Light Masks: Particle Optics Analysis  

E-Print Network [OSTI]

We study the focusing of atoms by multiple layers of standing light waves in the context of atom lithography. In particular, atomic localization by a double-layer light mask is examined using the optimal squeezing approach. Operation of the focusing setup is analyzed both in the paraxial approximation and in the regime of nonlinear spatial squeezing for the thin-thin as well as thin-thick atom lens combinations. It is shown that the optimized double light mask may considerably reduce the imaging problems, improve the quality of focusing and enhance the contrast ratio of the deposited structures.

R. Arun; I. Sh. Averbukh; T. Pfau

2005-03-22T23:59:59.000Z

9

Printability and inspectability of Defects on the EUV Mask for sub32nm Half Pitch HVM Application  

E-Print Network [OSTI]

strategies for 32-nm half-pitch and beyond", Proc. o f SPIEEUV Mask for sub32nm Half Pitch H V M Application Sungminof phase defect as half pitch, scanner condition and mask

Huh, S.

2012-01-01T23:59:59.000Z

10

Context-based automated defect classification system using multiple morphological masks  

DOE Patents [OSTI]

Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

Gleason, Shaun S. (Knoxville, TN); Hunt, Martin A. (Knoxville, TN); Sari-Sarraf, Hamed (Lubbock, TX)

2002-01-01T23:59:59.000Z

11

Maskless, reticle-free, lithography  

DOE Patents [OSTI]

A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

Ceglio, N.M.; Markle, D.A.

1997-11-25T23:59:59.000Z

12

Metrology Sources for EUV Lithography  

Science Journals Connector (OSTI)

Mask inspection and validation are key elements of the EUV lithography infrastructure. Requirements for the light sources to enable these tools will be ...

Home, Steve; Blackborow, Paul; Bensen, Matthew M; Partlow, Matthew J; Gustafson, Deborah; Goldstein, Michael

13

EUV mask reflectivity measurements with micro-scale spatial resolution  

SciTech Connect (OSTI)

The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. They describe the unique measurement capabilities of a prototype actinic (EUV) wavelength microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. The defects present in EUV masks can appear in many well-known forms: as particles that cause amplitude or phase variations in the reflected field; as surface contamination that reduces reflectivity and contrast; and as damage from inspection and use that reduces the reflectivity of the multilayer coating. This paper presents an overview of several topics where scanning actinic inspection makes a unique contribution to EUVL research. They describe the role of actinic scanning inspection in defect repair studies, observations of laser damage, actinic inspection following scanning electron microscopy, and the detection of both native and programmed defects.

Goldberg, Kenneth A.; Rekawa, Senajith B.; Kemp, Charles D.; Barty, Anton; Anderson, Erik; Kearney, Patrick; Han, Hakseung

2008-02-01T23:59:59.000Z

14

EUV mask reflectivity measurements with micron-scale spatial resolution  

SciTech Connect (OSTI)

The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. We describe the unique measurement capabilities of a prototype actinic (EUV wavelength) microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. Types of defects: (a) Buried Substrate Defects: particles & pits (causes amplitude and/or phase variations); (b) Surface Contamination (reduces reflectivity and (possibly) contrast); (c) Damage from Inspection and Use (reduces the reflectivity of the multilayer coating). This paper presents an overview of several topics where scanning actinic inspection makes a unique contribution to EUVL research. We describe the role of actinic scanning inspection in four cases: defect repair studies; observations of laser damage; after scanning electron microscopy; and native and programmed defects.

Goldberg, Kenneth A.; Rekawa, S.B.; Kemp, C.D.; Barty, A.; Anderson, E.H.; Kearney, Patrick; Han, Hakseung

2008-05-26T23:59:59.000Z

15

Wavelength-specific reflections: A decade of EUV actinic mask inspection research  

SciTech Connect (OSTI)

Mask inspection is essential for the success of any pattern-transfer lithography technology, and EUV Lithography in particular faces unique challenges. EUV masks resonant-reflective multilayer coatings have a narrow, wavelength-specific response that dramatically affects the way that defects appear, or disappear, at various illuminating wavelengths. Furthermore, the ever-shrinking size of 'critical' defects limits the potential effectiveness of DUV inspection techniques over time. Researchers pursuing numerous ways of finding and characterizing defects on EUV masks and have met with varying degrees of success. Their lessons inform the current, urgent exploration to select the most effective techniques for high-volume manufacturing. Ranging from basic research and demonstration experiments to commercial inspection tool prototypes, we survey the recent history of work in this area, including sixteen projects in Europe, Asia, and America. Solutions range from scanning beams to microscopy, dark field imaging to pattern transfer.

Goldberg, Kenneth; Mochi, Iacopo

2010-12-31T23:59:59.000Z

16

Neon Ion Beam Lithography (NIBL)  

E-Print Network [OSTI]

Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. ...

Winston, Donald

17

Comparison of fast 3D simulation and actinic inspection for EUV masks with buries defects  

SciTech Connect (OSTI)

Aerial images for isolated defects and the interactions of defects with features are compared between the Actinic Inspection Tool (AIT) at Lawrence Berkeley National Laboratory (LBNL) and the fast EUV simulation program RADICAL. Comparisons between AIT images from August 2007 and RADICAL simulations are used to extract aberrations. At this time astigmatism was the dominant aberration with a value of 0.55 waves RMS. Significant improvements in the imaging performance of the AIT were made between August 2007 and December 2008. A good match will be shown between the most recent AIT images and RADICAL simulations without aberrations. These comparisons will demonstrate that a large defect, in this case 7nm tall on the surface, is still printable even if it is centered under the absorber line. These comparisons also suggest that the minimum defect size is between 1.5nm and 0.8nm surface height because a 1.5nm defect was printable but a 0.8nm was not. Finally, the image of a buried defect near an absorber line through focus will demonstrate an inversion in the effect of the defect from a protrusion of the dark line into the space to a protrusion of the space into the line.

Clifford, C. H.; Wiraatmadja, S.; Chan, T. T.; Neureuther, A. R.; Goldberg, K. A.; Mochi, I.; Liang, T.

2009-02-23T23:59:59.000Z

18

Porphyrin-Based Photocatalytic Lithography  

SciTech Connect (OSTI)

Photocatalytic lithography is an emerging technique that couples light with coated mask materials in order to pattern surface chemistry. We excite porphyrins to create radical species that photocatalytically oxidize, and thereby pattern, chemistries in the local vicinity. The technique advantageously does not necessitate mass transport or specified substrates, it is fast and robust and the wavelength of light does not limit the resolution of patterned features. We have patterned proteins and cells in order to demonstrate the utility of photocatalytic lithography in life science applications.

Bearinger, J; Stone, G; Christian, A; Dugan, L; Hiddessen, A; Wu, K J; Wu, L; Hamilton, J; Stockton, C; Hubbell, J

2007-10-15T23:59:59.000Z

19

Maskless lithography  

DOE Patents [OSTI]

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

Sweatt, William C. (Albuquerque, NM); Stulen, Richard H. (Livermore, CA)

1999-01-01T23:59:59.000Z

20

Maskless lithography  

DOE Patents [OSTI]

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.

Sweatt, W.C.; Stulen, R.H.

1999-02-09T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Validity of the thin mask approximation in extreme ultraviolet mask roughness simulations  

SciTech Connect (OSTI)

In the case of extreme ultraviolet (EUV) lithography, modeling has shown that reflector phase roughness on the lithographic mask is a significant concern due to the image plan speckle it causes and the resulting line-edge roughness on imaged features. Modeling results have recently been used to determine the requirements for future production worthy masks yielding the extremely stringent specification of 50 pm rms roughness. Owing to the scale of the problem in terms of memory requirements, past modeling results have all been based on the thin mask approximation. EUV masks, however, are inherently three dimensional in nature and thus the question arises as to the validity of the thin mask approximation. Here we directly compare image plane speckle calculation results using the fast two dimensional thin mask model to rigorous finite-difference time-domain results and find the two methods to be comparable.

Naulleau, Patrick; George, Simi

2011-01-26T23:59:59.000Z

22

Absorbance modulation optical lithography  

E-Print Network [OSTI]

In this thesis, the concept of absorbance-modulation optical lithography (AMOL) is described, and the feasibility experimentally verified. AMOL is an implementation of nodal lithography, which is not bounded by the diffraction ...

Tsai, Hsin-Yu Sidney

2007-01-01T23:59:59.000Z

23

Coatings on reflective mask substrates  

DOE Patents [OSTI]

A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

Tong, William Man-Wai (Oakland, CA); Taylor, John S. (Livermore, CA); Hector, Scott D. (Oakland, CA); Mangat, Pawitter J. S. (Gilbert, AZ); Stivers, Alan R. (San Jose, CA); Kofron, Patrick G. (San Jose, CA); Thompson, Matthew A. (Austin, TX)

2002-01-01T23:59:59.000Z

24

Microfield exposure tool enables advances in EUV lithography development  

SciTech Connect (OSTI)

With demonstrated resist resolution of 20 nm half pitch, the SEMATECH Berkeley BUV microfield exposure tool continues to push crucial advances in the areas of BUY resists and masks. The ever progressing shrink in computer chip feature sizes has been fueled over the years by a continual reduction in the wavelength of light used to pattern the chips. Recently, this trend has been threatened by unavailability of lens materials suitable for wavelengths shorter than 193 nm. To circumvent this roadblock, a reflective technology utilizing a significantly shorter extreme ultraviolet (EUV) wavelength (13.5 nm) has been under development for the past decade. The dramatic wavelength shrink was required to compensate for optical design limitations intrinsic in mirror-based systems compared to refractive lens systems. With this significant reduction in wavelength comes a variety of new challenges including developing sources of adequate power, photoresists with suitable resolution, sensitivity, and line-edge roughness characteristics, as well as the fabrication of reflection masks with zero defects. While source development can proceed in the absence of available exposure tools, in order for progress to be made in the areas of resists and masks it is crucial to have access to advanced exposure tools with resolutions equal to or better than that expected from initial production tools. These advanced development tools, however, need not be full field tools. Also, implementing such tools at synchrotron facilities allows them to be developed independent of the availability of reliable stand-alone BUY sources. One such tool is the SEMATECH Berkeley microfield exposure tool (MET). The most unique attribute of the SEMA TECH Berkeley MET is its use of a custom-coherence illuminator made possible by its implementation on a synchrotron beamline. With only conventional illumination and conventional binary masks, the resolution limit of the 0.3-NA optic is approximately 25 nm, however, with EUV not expected in production before the 22-nm half pitch node even finer resolution capabilities are now required from development tools. The SEMATECH Berkeley MET's custom-coherence illuminator allows it to be used with aggressive modified illumination enabling kJ factors as low as 0.25. Noting that the lithographic resolution of an exposure tool is defined as k{sub 1}{lambda}/NA, yielding an ultimate resolution limit of 11 nm. To achieve sub-20-nm aerial-image resolution while avoiding forbidden pitches on Manhattan-geometry features with the centrally-obscured MET optic, a 45-degree oriented dipole pupil fill is used. Figure 1 shows the computed aerial-image contrast as a function of half pitch for a dipole pupil fill optimized to print down to the 19-nm half pitch level. This is achieved with relatively uniform performance at larger dimensions. Using this illumination, printing down to the 20-nm half pitch level has been demonstrated in chemically amplified resists as shown in Fig. 2. The SEMATECH Berkeley MET tool plays a crucial role in the advancement of EUV resists. The unique programmable coherence properties of this tool enable it to achieve higher resolution than other EUV projection tools. As presented here, over the past year the tool has been used to demonstrate resist resolutions of 20 half pitch. Although not discussed here, because the Berkeley MET tool is a true projection lithography tool, it also plays a crucial role in advanced EUV mask research. Examples of the work done in this area include defect printability, mask architecture, and phase shift masks.

Naulleau, Patrick

2009-09-07T23:59:59.000Z

25

Contact thermal lithography  

E-Print Network [OSTI]

Contact thermal lithography is a method for fabricating microscale patterns using heat transfer. In contrast to photolithography, where the minimum achievable feature size is proportional to the wavelength of light used ...

Schmidt, Aaron Jerome, 1979-

2004-01-01T23:59:59.000Z

26

MOVING MASK LITHOGRAPHY FOR REAL-TIME SYNTHESIS OF  

E-Print Network [OSTI]

, California, USA #12;First, we measured the flow speed by generating a test particle and measuring its speed to the limitations in the field of view and computational speed, the maximum measurable flow speed is ~300 µm-phase photocurable oligomer stream with the UV light exposure using a high-magnification objective lens [1]. However

Park, Namkyoo

27

Plating/Lithography-new  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Plating/Lithography Plating/Lithography Manufacturing Technologies The Plating capabilities in the Thin Film, Vacuum and Packaging department include both electroless and electro plating. These processes support Multi-Chip Module, microelectromechanical systems (MEMS), Weapons Systems (Neutron Tubes) and other miscellaneous projects. Photo-processing facilities provide pattern- ing and circuitry on a variety of substrate materials. The department's capabilities include dry film, liquid, and electrophoreti- cally deposited resist application, exposure, development and patterning. Capabilities * Electroplate large areas using cyanide and non-cyanide based chemistries * Routinely plate copper, nickel and gold * Expertise in developing plating process- es for unusual applications and metals

28

XUV free-electron laser-based projection lithography systems  

SciTech Connect (OSTI)

Free-electron laser sources, driven by rf-linear accelerators, have the potential to operate in the extreme ultraviolet (XUV) spectral range with more than sufficient average power for high-volume projection lithography. For XUV wavelengths from 100 nm to 4 nm, such sources will enable the resolution limit of optical projection lithography to be extended from 0.25 {mu}m to 0.05{mu}m and with an adequate total depth of focus (1 to 2 {mu}m). Recent developments of a photoinjector of very bright electron beams, high-precision magnetic undulators, and ring-resonator cavities raise our confidence that FEL operation below 100 nm is ready for prototype demonstration. We address the motivation for an XUV FEL source for commercial microcircuit production and its integration into a lithographic system, include reflecting reduction masks, reflecting XUV projection optics and alignment systems, and surface-imaging photoresists. 52 refs., 7 figs.

Newnam, B.E.

1990-01-01T23:59:59.000Z

29

Development of a laboratory extreme-ultraviolet lithography tool  

SciTech Connect (OSTI)

The development of a laboratory EUV lithography tool based on a laser plasma source, a 10x Schwarzchild camera, and a magnetically levitated wafer stage is presented. Interferometric measurements of the camera aberrations are incorporated into physical-optics simulations to estimate the EUV imaging performance of the camera. Experimental results demonstrate the successful matching of five multilayer reflecting surfaces, coated to specification for a wide range of figure and incidence angle requirements. High-resolution, 10x-reduction images of a reflection mask are shown.

Tichenor, D.A.; Kubiak, G.D.; Malinowski, M.E.; Stulen, R.H.; Haney, S.J.; Berger, K.W.; Nissen, R.P.; Wilkerson, G.A.; Paul, P.H.; Birtola, S.R.; Jin, P.S.; Arling, R.W.; Ray-Chaudhuri, A.K. [Sandia National Labs., Livermore, CA (United States); Sweatt, W.C.; Chow, W.W. [Sandia National Labs., Albuquerque, NM (United States); Bjorkholm, J.E.; Freeman, R.R.; Himel, M.D.; MacDowell, A.A.; Tennant, D.M.; Fetter, L.A.; Wood, O.R. II [AT& T Bell Labs., Holmdel, NJ (United States); Waskiewicz, W.K.; White, D.L.; Windt, D.L. [AT& T Bell Labs., Murray Hill, NJ (United States); Jewell, T.E. [Jewell (T.E.), Boulder, CO (United States)

1994-04-01T23:59:59.000Z

30

Critical illumination condenser for extreme ultraviolet projection lithography  

SciTech Connect (OSTI)

A condenser system couples a radiation source to an imaging system. The authors have designed a critical illumination condenser system which meets the technical challenges of extreme ultraviolet projection lithography based on a ring field imaging system and a laser produced plasma source. The optical system, a three spherical mirror optical design, is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. This type of condenser optical design is sufficiently versatile to be employed with two distinct systems, one from Lawrence Livermore National Laboratory and one from AT and T/Sandia.

Cohen, S.J.; Seppala, L.G.

1995-03-02T23:59:59.000Z

31

Transparent fluids for 157-nm immersion lithography  

E-Print Network [OSTI]

- gineers. [DOI: 10.1117/1.1637366] Subject terms: 157-nm lithography; immersion fluid; perfluoropolyether

Rollins, Andrew M.

32

Method for maskless lithography  

DOE Patents [OSTI]

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

Sweatt, William C. (13027 Arrovo de Vista, Albuquerque, NM 87111); Stulen, Richard H. (5258 Roxanne Ct., Livermore, Alameda County, CA 94550)

2000-01-01T23:59:59.000Z

33

Synchrotron radiation sources and condensers for projection x-ray lithography  

SciTech Connect (OSTI)

The design requirements for a compact electron storage ring that could be used as a soft x-ray source for projection lithography are discussed. The design concepts of the x-ray optics that are required to collect and condition the radiation in divergence, uniformity and direction to properly illuminate the mask and the particular x-ray projection camera used are discussed. Preliminary designs for an entire soft x-ray projection lithography system using an electron storage ring as a soft X-ray source are presented. It is shown that by combining the existing technology of storage rings with large collection angle condensers, a powerful and reliable source of 130[Angstrom] photons for production line projection x-ray lithography is possible.

Murphy, J.B.; MacDowell, A.A. (Brookhaven National Lab., Upton, NY (United States)); White, D.L. (AT and T Bell Labs., Murray Hill, NJ (United States)); Wood, O.R. II (AT and T Bell Labs., Holmdel, NJ (United States))

1992-01-01T23:59:59.000Z

34

Synchrotron radiation sources and condensers for projection x-ray lithography  

SciTech Connect (OSTI)

The design requirements for a compact electron storage ring that could be used as a soft x-ray source for projection lithography are discussed. The design concepts of the x-ray optics that are required to collect and condition the radiation in divergence, uniformity and direction to properly illuminate the mask and the particular x-ray projection camera used are discussed. Preliminary designs for an entire soft x-ray projection lithography system using an electron storage ring as a soft X-ray source are presented. It is shown that by combining the existing technology of storage rings with large collection angle condensers, a powerful and reliable source of 130{Angstrom} photons for production line projection x-ray lithography is possible.

Murphy, J.B.; MacDowell, A.A. [Brookhaven National Lab., Upton, NY (United States); White, D.L. [AT and T Bell Labs., Murray Hill, NJ (United States); Wood, O.R. II [AT and T Bell Labs., Holmdel, NJ (United States)

1992-11-01T23:59:59.000Z

35

Development of an immersion maskless lithography system  

E-Print Network [OSTI]

As lithography quickly approaches its limits with current technologies, a host of new ideas is being proposed in hopes of pushing lithography to new levels of performance. The work presented in this thesis explores the use ...

Chao, David, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

36

Masked multichannel analyzer  

DOE Patents [OSTI]

An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

Winiecki, Alan L. (Downers Grove, IL); Kroop, David C. (Columbia, MD); McGee, Marilyn K. (Colorado Springs, CO); Lenkszus, Frank R. (Woodridge, IL)

1986-01-01T23:59:59.000Z

37

Critical illumination condenser for x-ray lithography  

DOE Patents [OSTI]

A critical illumination condenser system is disclosed, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 {micro}m source and requires a magnification of 26. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth. 6 figs.

Cohen, S.J.; Seppala, L.G.

1998-04-07T23:59:59.000Z

38

Actinic characterization of EUV bump-type phase defects  

SciTech Connect (OSTI)

Despite tremendous progress and learning with EUV lithography, quantitative experimental information about the severity of point-like phase defects remains in short supply. We present a study of measured, EUV aerial images from a series of well-characterized, open-field, bump-type programmed phase defects, created on a substrate before multilayer deposition.

Goldberg, Kenneth A.; Mochi, Iacopo; Liang, Ted

2011-01-10T23:59:59.000Z

39

Fabrication and performance of nanoscale ultra-smooth programmeddefects for EUV Lithography  

SciTech Connect (OSTI)

We have developed processes for producing ultra-smooth nanoscale programmed substrate defects that have applications in areas such as thin film growth, EUV lithography, and defect inspection. Particle, line, pit, and scratch defects on the substrates between 40 and 140 nm wide 50 to 90 nm high have been successfully produced using e-beam lithograpy and plasma etching in both Silicon and Hydrosilsequioxane films. These programmed defect substrates have several advantages over those produced previously using gold nanoparticles or polystyrene latex spheres--most notably, the ability to precisely locate features and produce recessed as well as bump type features in ultra-smooth films. These programmed defects were used to develop techniques for film defect mitigation and results are discussed.

Olynick, D.L.; Salmassi, F.; Liddle, J.A.; Mirkarimi, P.B.; Spiller, E.; Baker, S.L.; Robinson, J.

2005-02-01T23:59:59.000Z

40

History of extreme ultraviolet lithography  

Science Journals Connector (OSTI)

Extreme ultraviolet lithography (EUVL) technology was proposed and progressed on both hemispheres in the latter part of the 1980s independently. Although this technology is a design using a catoptric system instead of refraction lens and the accuracy of subnanometer is demanded for all component engineering the research and development of Japan and the United States has led to significant breakthroughs in processing and measurement technology over the past 20 years. EUVL is now the most promising next-generation technology for large scale integration fabrication. This article discusses the beginnings of EUVL what advances are needed and future prospects.

Hiroo Kinoshita

2005-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Extreme-UV lithography system  

DOE Patents [OSTI]

A photolithography system that employs a condenser that includes a series of aspheric mirrors on one side of a small, incoherent source of radiation producing a series of beams is provided. Each aspheric mirror images the quasi point source into a curved line segment. A relatively small arc of the ring image is needed by the camera; all of the beams are so manipulated that they all fall onto this same arc needed by the camera. Also, all of the beams are aimed through the camera's virtual entrance pupil. The condenser includes a correcting mirror for reshaping a beam segment which improves the overall system efficiency. The condenser efficiently fills the larger radius ringfield created by today's advanced camera designs. The system further includes (i) means for adjusting the intensity profile at the camera's entrance pupil or (ii) means for partially shielding the illumination imaging onto the mask or wafer. The adjusting means can, for example, change at least one of: (i) partial coherence of the photolithography system, (ii) mask image illumination uniformity on the wafer or (iii) centroid position of the illumination flux in the entrance pupil. A particularly preferred adjusting means includes at least one vignetting mask that covers at least a portion of the at least two substantially equal radial segments of the parent aspheric mirror.

Replogle, William C. (Livermore, CA); Sweatt, William C. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

42

ORC Seminar Series Presents: "Nonlinear laser lithography  

E-Print Network [OSTI]

ORC Seminar Series Presents: "Nonlinear laser lithography: formation of self-authored 50 journal and more than 150 conference papers and he has given more than 100 invited talks. http://www.orc

Anderson, Jim

43

Cryogenic xenon droplets for advanced lithography  

SciTech Connect (OSTI)

A cryogenic xenon droplet production system for use in anadvanced laser plasma source for x-ray lithography has been designed, fabricated, and tested at ORNL. The droplet generator is based on proven (ink jet printer) drop-on-demand.

Gouge, M.J.; Fisher, P.W.

1996-04-01T23:59:59.000Z

44

Micro-optic fabrication with subdomain masking  

Science Journals Connector (OSTI)

An innovative fabrication technique is introduced that is based on multiple-exposure techniques for micro-optics fabrication. This approach is compatible with conventional lithography...

Pitchumani, Mahesh; Brown, Jeremiah; Mohammed, Waleed; Johnson, Eric G

2004-01-01T23:59:59.000Z

45

Extreme-UV lithography condenser  

DOE Patents [OSTI]

Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

Sweatt, William C. (Albuquerque, NM); Sweeney, Donald W. (San Ramon, CA); Shafer, David (Fairfield, CT); McGuire, James (Pasadena, CA)

2001-01-01T23:59:59.000Z

46

The Effects of Oxygen Plasma on the Chemical Composition and Morphology of the Ru Capping Layer of the Extreme Ultraviolet (EUV) Mask Blanks  

SciTech Connect (OSTI)

Contamination removal from extreme ultraviolet (EUV) mask surfaces is one of the most important aspects to improve reliability for the next generation of EUV lithography. We report chemical and morphological changes of the ruthenium (Ru) mask surface after oxygen plasma treatment using surface sensitive analytical methods: X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and transmission electron microscopy (TEM). Chemical analysis of the EUV masks shows an increase in the subsurface oxygen concentration, Ru oxidation and surface roughness. XPS spectra at various photoelectron takeoff angles suggest that the EUV mask surface was covered with chemisorbed oxygen after oxygen plasma treatment. It is proposed that the Kirkendall effect is the most plausible mechanism that explains the Ru surface oxidation. The etching rate of the Ru capping layer by oxygen plasma was estimated to be 1.5 {+-} 0.2 {angstrom}/min, based on TEM cross sectional analysis.

Belau, Leonid; Park, Jeong Y.; Liang, Ted; Somorjai, Gabor A.

2008-06-07T23:59:59.000Z

47

Particle removal challenges with EUV patterned masks for the sub-22 Abbas Rastegar*a  

E-Print Network [OSTI]

) in addition to ammonium hydroxide mixture (APM) and megasonic is required to remove 28 nm SiO2 particlesParticle removal challenges with EUV patterned masks for the sub-22 nm HP node Abbas Rastegar.Rastegar@sematech.org ABSTRACT The particle removal efficiency (PRE) of cleaning processes diminishes whenever the minimum defect

48

Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask  

SciTech Connect (OSTI)

Two-dimensional (2D) atomic crystals and their hybrid structures have recently attracted much attention due to their potential applications. The fabrication of metallic contacts or nanostructures on 2D materials is very common and generally achieved by performing electron-beam (e-beam) lithography. However, e-beam lithography is not applicable in certain situations, e.g., cases in which the e-beam resist does not adhere to the substrates or the intrinsic properties of the 2D materials are greatly altered and degraded. Here, we present a residue-free approach for fabricating high-performance graphene devices by patterning a thin film of e-beam resist as a stencil mask. This technique can be generally applied to substrates with varying surface conditions, while causing negligible residues on graphene. The technique also preserves the design flexibility offered by e-beam lithography and therefore allows us to fabricate multi-probe metallic contacts. The graphene field-effect transistors fabricated by this method exhibit smooth surfaces, high mobility, and distinct magnetotransport properties, confirming the advantages and versatility of the presented residue-free technique for the fabrication of devices composed of 2D materials.

Shih, Fu-Yu [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Chen, Shao-Yu; Wu, Tsuei-Shin; Wang, Wei-Hua, E-mail: wwang@sinica.edu.tw [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Liu, Cheng-Hua; Chen, Yang-Fang [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Ho, Po-Hsun; Chen, Chun-Wei [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2014-06-15T23:59:59.000Z

49

Magnetic nanostructures patterned by block copolymer lithography  

E-Print Network [OSTI]

The aim of this research was twofold: understanding the methods of patterning magnetic films using self-assembled block copolymer masks and examining the magnetic reversal mechanisms of as deposited and patterned magnetic ...

Ilievski, Filip, 1980-

2008-01-01T23:59:59.000Z

50

Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography  

DOE Patents [OSTI]

A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated beam at grazing incidence. The ripple plate comprises a plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

Chapman, Henry N. (Livermore, CA); Nugent, Keith A. (North Fitzroy, AU)

2001-01-01T23:59:59.000Z

51

Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography  

DOE Patents [OSTI]

A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated or converging beam at grazing incidence. The ripple plate comprises a flat or curved plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

Chapman, Henry N. (Livermore, CA); Nugent, Keith A. (North Fitzroy, AU)

2002-01-01T23:59:59.000Z

52

Fabrication of phosphor micro-grids using proton beam lithography.  

SciTech Connect (OSTI)

A new nuclear microscopy technique called ion photon emission microscopy or IPEM was recently invented. IPEM allows analysis involving single ions, such as ion beam induced charge (IBIC) or single event upset (SEU) imaging using a slightly modified optical microscope. The spatial resolution of IPEM is currently limited to more than 10 {micro}m by the scattering and reflection of ion-induced photons, i.e. light blooming or spreading, in the ionoluminescent phosphor layer. We are developing a 'Microscopic Gridded Phosphor' (also called Black Matrix) where the phosphor nanocrystals are confined within the gaps of a micrometer scale opaque grid, which limits the amount of detrimental light blooming. MeV-energy proton beam lithography is ideally suited to lithographically form masks for the grid because of high aspect ratio, pattern density and sub-micron resolution of this technique. In brief, the fabrication of the grids was made in the following manner: (1) a MeV proton beam focused to 1.5-2 {micro}m directly fabricated a matrix of pillars in a 15 {micro}m thick SU-8 lithographic resist; (2) 7:1 aspect ratio pillars were then formed by developing the proton exposed area; (3) Ni (Au) was electrochemically deposited onto Cu-coated Si from a sulfamate bath (or buffered CN bath); (4) the SU-8 pillars were removed by chemical etching; finally (5) the metal micro-grid was freed from its substrate by etching the underlying Cu layer. Our proposed metal micro-grids promise an order-of-magnitude improvement in the resolution of IPEM.

Rossi, Paolo (University of Padova and INFN, Padova, Italy); Antolak, Arlyn J.; Provencio, Paula Polyak; Doyle, Barney Lee; Malmqvist, Klas (Lund Institute of Technology, Lund, Sweden); Hearne, Sean Joseph; Nilsson, Christer (Lund Institute of Technology, Lund, Sweden); Kristiansson, Per (Lund Institute of Technology, Lund, Sweden); Wegden, Marie (Lund Institute of Technology, Lund, Sweden); Elfman, Mikael (Lund Institute of Technology, Lund, Sweden); Pallon, Jan (Lund Institute of Technology, Lund, Sweden); Auzelyte, Vaida (Lund Institute of Technology, Lund, Sweden)

2005-07-01T23:59:59.000Z

53

Rechargeable Batteries, Photochromics, Electrochemical Lithography: From  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Rechargeable Batteries, Photochromics, Electrochemical Lithography: From Rechargeable Batteries, Photochromics, Electrochemical Lithography: From Interfacial Studies to Practical Applications Speaker(s): Robert Kostecki Date: January 11, 2001 - 12:00pm Location: Bldg 90 Seminar Host/Point of Contact: Satkartar K. Kinney The constantly growing power requirements of portable electronic devices and the need for high-power batteries for electric vehicles have created a strong demand for new batteries or substantial improvements of existing ones. Fundamental problems associated with complex interfacial processes in batteries must be resolved to enhance battery performance and lifetime. An overview of the principles of electrode-electrolyte interfacial studies, experimental methods, recent results, and potential applications will be presented. Advanced instrumental techniques and

54

UNCTIONAL PERFLUOROPOLYETHERS AS NOVEL MATERIALS FOR MICROFLUIDICS AND SOFT LITHOGRAPHY  

E-Print Network [OSTI]

UNCTIONAL PERFLUOROPOLYETHERS AS NOVEL MATERIALS FOR MICROFLUIDICS AND SOFT LITHOGRAPHY Jason P photocurable perfluoropolyethers (PFPEs). PFPEs are a unique class of fluoropolymers that are liquids at room

Carter, Kenneth

55

Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System  

SciTech Connect (OSTI)

The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies have been studied. The dependence of the throughput with the exposure field size and the speed of the mechanical stage has been investigated. In order to perform maskless lithography, different micro-fabricated pattern generators have been developed for the MMRL system. Ion beamlet switching has been successfully demonstrated on the MMRL system. A positive bias voltage around 10 volts is sufficient to switch off the ion current on the micro-fabricated pattern generators. Some unexpected problems, such as the high-energy secondary electron radiations, have been discovered during the experimental investigation. Thermal and structural analysis indicates that the aperture displacement error induced by thermal expansion can satisfy the 3{delta} CD requirement for lithography nodes down to 25 nm. The cross-talking effect near the surface and inside the apertures of the pattern generator has been simulated in a 3-D ray-tracing code. New pattern generator design has been proposed to reduce the cross-talking effect. In order to eliminate the surface charging effect caused by the secondary electrons, a new beam-switching scheme in which the switching electrodes are immersed in the plasma has been demonstrated on a mechanically fabricated pattern generator.

Jiang, Ximan

2006-05-18T23:59:59.000Z

56

E-Print Network 3.0 - arf immersion lithography Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

immersion lithography using ArF illumination... node; 38-nm node; high-n immersion fluids; ArF immersion lithography; 193-nm immersion ... Source: French, Roger H. -...

57

Large-solid-angle illuminators for extreme ultraviolet lithography with laser plasmas  

SciTech Connect (OSTI)

Laser Plasma Sources (LPSS) of extreme ultraviolet radiation are an attractive alternative to synchrotron radiation sources for extreme ultraviolet lithography (EUVL) due to their modularity, brightness, and modest size and cost. To fully exploit the extreme ultraviolet power emitted by such sources, it is necessary to capture the largest possible fraction of the source emission half-sphere while simultaneously optimizing the illumination stationarity and uniformity on the object mask. In this LDRD project, laser plasma source illumination systems for EUVL have been designed and then theoretically and experimentally characterized. Ellipsoidal condensers have been found to be simple yet extremely efficient condensers for small-field EUVL imaging systems. The effects of aberrations in such condensers on extreme ultraviolet (EUV) imaging have been studied with physical optics modeling. Lastly, the design of an efficient large-solid-angle condenser has been completed. It collects 50% of the available laser plasma source power at 14 nm and delivers it properly to the object mask in a wide-arc-field camera.

Kubiak, G.D.; Tichenor, D.A. [Sandia National Labs., Livermore, CA (United States); Sweatt, W.C.; Chow, W.W. [Sandia National Labs., Albuquerque, NM (United States)

1995-06-01T23:59:59.000Z

58

Maskless Lithography Using Drop-On-Demand Inkjet Printing Method  

E-Print Network [OSTI]

be an attractive alternative approach. A schematic diagram of a maskless lithography system using the DOD inkjet material droplets under computer control. Each droplet takes a ballistic trajectory and lands on a certain and other disposable electronic devices. Thirdly, inkjet printing lithography could handle a wide range

Bokor, Jeffrey

59

Wafer scale patterning by soft UV-nanoimprint lithography  

Science Journals Connector (OSTI)

We present first results on wafer scale patterning within one imprint step only, using Soft UV-Nanoimprint Lithography (UV-NIL). In this process, flexible transparent stamps, fabricated by cast moulding ensure a conformal contact, whereas the usage of ... Keywords: UV-nanoimprint, nanoimprint, patterning on wafer scale, soft lithography

U. Plachetka; M. Bender; A. Fuchs; B. Vratzov; T. Glinsner; F. Lindner; H. Kurz

2004-06-01T23:59:59.000Z

60

Particle removal challenges with EUV patterned mask for the sub-22nm HP node  

SciTech Connect (OSTI)

The particle removal efficiency (PRE) of cleaning processes diminishes whenever the minimum defect size for a specific technology node becomes smaller. For the sub-22 nm half-pitch (HP) node, it was demonstrated that exposure to high power megasonic up to 200 W/cm{sup 2} did not damage 60 nm wide TaBN absorber lines corresponding to the 16 nm HP node on wafer. An ammonium hydroxide mixture and megasonics removes {ge}50 nm SiO{sub 2} particles with a very high PRE, A sulfuric acid hydrogen peroxide mixture (SPM) in addition to ammonium hydroxide mixture (APM) and megasonic is required to remove {ge}28 nm SiO{sub 2} particles with a high PRE. Time-of-flight secondary ion mass spectroscopy (TOFSIMS) studies show that the presence of O{sub 2} during a vacuum ultraviolet (VUV) ({lambda} = 172 nm) surface conditioning step will result in both surface oxidation and Ru removal, which drastically reduce extreme ultraviolet (EUV) mask life time under multiple cleanings. New EUV mask cleaning processes show negligible or no EUV reflectivity loss and no increase in surface roughness after up to 15 cleaning cycles. Reviewing of defect with a high current density scanning electron microscope (SEM) drastically reduces PRE and deforms SiO{sub 2} particles. 28 nm SiO{sub 2} particles on EUV masks age very fast and will deform over time, Care must be taken when reviewing EUV mask defects by SEM. Potentially new particles should be identified to calibrate short wavelength inspection tools, Based on actinic image review, 50 nm SiO{sub 2} particles on top of the EUV mask will be printed on the wafer.

Rastegar, A.; Eichenlaub, S.; Kadaksham, A. J.; Lee, B.; House, M.; Huh, S.; Cha, B.; Yun, H.; Mochi, I.; Goldberg, K. A.

2010-03-12T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Reusable plasmonic substrates fabricated by interference lithography: a platform for  

E-Print Network [OSTI]

Reusable plasmonic substrates fabricated by interference lithography: a platform for systematic between electromagnetic and chemical enhancement, the development of standardized and recyclable SERS open a powerful platform within an analytical tool and in particular for systematic SERS studies

Dalang, Robert C.

62

Case studies on lithography-friendly vlsi circuit layout  

E-Print Network [OSTI]

lithography-friendly. In this work, we intend to implement these modifications as a series of perturbations on the initial layout generated by the CAD tool for the circuit. To implement these changes we first calculate the feature variations offline...

Shah, Pratik Jitendra

2009-05-15T23:59:59.000Z

63

Achieving sub-10-nm resolution using scanning electron beam lithography  

E-Print Network [OSTI]

Achieving the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications have driven demand for ...

Cord, Bryan M. (Bryan Michael), 1980-

2009-01-01T23:59:59.000Z

64

X-ray lithography using holographic images  

DOE Patents [OSTI]

A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

Howells, Malcolm R. (Berkeley, CA); Jacobsen, Chris (Sound Beach, NY)

1995-01-01T23:59:59.000Z

65

Automated mask creation from a 3D model using Faethm.  

SciTech Connect (OSTI)

We have developed and implemented a method which given a three-dimensional object can infer from topology the two-dimensional masks needed to produce that object with surface micro-machining. The masks produced by this design tool can be generic, process independent masks, or if given process constraints, specific for a target process. This design tool calculates the two-dimensional mask set required to produce a given three-dimensional model by investigating the vertical topology of the model.

Schiek, Richard Louis; Schmidt, Rodney Cannon

2007-11-01T23:59:59.000Z

66

Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale  

E-Print Network [OSTI]

Exploring the resolution limit of electron-beam lithography is of great interest both scientifically and technologically. However, when electron-beam lithography approaches its resolution limit, imaging and metrology of ...

Duan, Huigao

67

E-Print Network 3.0 - aperture lithography ppal Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Department of Electrical and Computer Engineering, University of Connecticut Collection: Engineering 26 Immersion fluids for lithography: refractive index measurement using...

68

Argonne CNM Highlight: Block copolymer lithography approach to nanoscale  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Block copolymer lithography approach to nanoscale self-assembly Block copolymer lithography approach to nanoscale self-assembly hybrid organic-organomemtalliic block copolymer thin film cast on a silicon nitride membrane substrate This image created by Seth Darling and Nathan Ramanathan was selected for the September 2009 cover of Materials Today. Block copolymer lithography represents a promising next-generation alternative to traditional top-down methodologies. The figure shows an optical micrograph of a hybrid organic-organometallic block copolymer thin film cast on a silicon nitride membrane substrate, which reveals thickness-induced coloring effects reminiscent of art glass. This polymer self-assembles into an ordered nanoscale cylindrical morphology, the orientation of which can be controlled with film thickness. Cylinders

69

Thermal oxidation as a simple method to increase resolution in nanoimprint lithography  

Science Journals Connector (OSTI)

We introduce a simple thermal oxidation technique for decreasing feature sizes of nanoimprint lithography (NIL) masters. During oxidation, the dimensions of negative features are reduced (e.g., gaps become narrower), and the dimensions of positive features ... Keywords: Electron beam lithography, Master fabrication, Nanoimprint lithography, Resolution, Thermal oxidation

Andrew P. Bonifas; Richard L. McCreery; Kenneth D. Harris

2011-11-01T23:59:59.000Z

70

Dose masking feature for BNCT radiotherapy planning  

DOE Patents [OSTI]

A system for displaying an accurate model of isodoses to be used in radiotherapy so that appropriate planning can be performed prior to actual treatment on a patient. The nature of the simulation of the radiotherapy planning for BNCT and Fast Neutron Therapy, etc., requires that the doses be computed in the entire volume. The "entire volume" includes the patient and beam geometries as well as the air spaces in between. Isodoses derived from the computed doses will therefore extend into the air regions between the patient and beam geometries and thus depict the unrealistic possibility that radiation deposition occurs in regions containing no physical media. This problem is solved by computing the doses for the entire geometry and then masking the physical and air regions along with the isodose contours superimposed over the patient image at the corresponding plane. The user is thus able to mask out (remove) the contour lines from the unwanted areas of the image by selecting the appropriate contour masking region from the raster image.

Cook, Jeremy L. (Greeley, CO); Wessol, Daniel E. (Bozeman, MT); Wheeler, Floyd J. (Idaho Falls, ID)

2000-01-01T23:59:59.000Z

71

Multilayer reflective coatings for extreme-ultraviolet lithography  

SciTech Connect (OSTI)

Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling technology for EUV lithography. Mo/Si multilayers with reflectances of 67.5% at 13.4 nm are now routinely achieved and reflectances of 70 2% at 11.4 nm were obtained with MO/Be multilayers. High reflectance is achieved with careful control of substrate quality, layer thicknesses, multilayer materials, interface quality, and surface termination. Reflectance and film stress were found to be stable relative to the requirements for application to EUV lithography. The run-to-run reproducibility of the reflectance peak position was characterized to be better than 0.2%, providing the required wavelength matching among the seven multilayer-coated mirrors used in the present lithography system design. Uniformity of coating was improved to better than 0.5% across 150 mm diameter substrates. These improvements in EUV multilayer mirror technology will enable us to meet the stringent specifications for coating the large optical substrates for our next-generation EUV lithography system.

Montcalm, C., LLNL

1998-03-10T23:59:59.000Z

72

Ultratech Develops an Improved Lithography Tool for LED Wafer Manufacturing  

Broader source: Energy.gov [DOE]

Ultratech modified an existing lithography tool used for semiconductor manufacturing to better meet the cost and performance targets of the high-brightness LED manufacturing industry. The goal was to make the equipment compatible with the wide range of substrate diameters and thicknesses prevalent in the industry while reducing the capital cost and the overall cost of ownership (COO).

73

Digital microfluidics using soft lithography{ John Paul Urbanski,a  

E-Print Network [OSTI]

Digital microfluidics using soft lithography{ John Paul Urbanski,a William Thies,b Christopher published as an Advance Article on the web 29th November 2005 DOI: 10.1039/b510127a Although microfluidic software to drive the pumps, valves, and electrodes used to manipulate fluids in microfluidic devices

Amarasinghe, Saman

74

Photonic crystal fibre-based light source for STED lithography  

SciTech Connect (OSTI)

A light source having a relative noise level in the order of 10{sup -6} and sufficient stability for application in STED lithography has been obtained using the generation of Cherenkov peaks in a supercontinuum spectrum. (laser applications and other topics in quantum electronics)

Glubokov, D A; Sychev, V V; Vitukhnovsky, Alexey G; Korol'kov, A E

2013-06-30T23:59:59.000Z

75

Condenser for extreme-UV lithography with discharge source  

DOE Patents [OSTI]

Condenser system, for use with a ringfield camera in projection lithography, employs quasi grazing-incidence collector mirrors that are coated with a suitable reflective metal such as ruthenium to collect radiation from a discharge source to minimize the effect of contaminant accumulation on the collecting mirrors.

Sweatt, William C. (Albuquerque, NM); Kubiak, Glenn D. (Livermore, CA)

2001-01-01T23:59:59.000Z

76

Removable pellicle for lithographic mask protection and handling  

DOE Patents [OSTI]

A removable pellicle for a lithographic mask that provides active and robust particle protection, and which utilizes a traditional pellicle and two deployments of thermophoretic protection to keep particles off the mask. The removable pellicle is removably attached via a retaining structure to the mask substrate by magnetic attraction with either contacting or non-contacting magnetic capture mechanisms. The pellicle retaining structural is composed of an anchor piece secured to the mask substrate and a frame member containing a pellicle. The anchor piece and the frame member are in removable contact or non-contact by the magnetic capture or latching mechanism. In one embodiment, the frame member is retained in a floating (non-contact) relation to the anchor piece by magnetic levitation. The frame member and the anchor piece are provided with thermophoretic fins which are interdigitated to prevent particles from reaching the patterned area of the mask. Also, the anchor piece and mask are maintained at a higher temperature than the frame member and pellicle which also prevents particles from reaching the patterned mask area by thermophoresis. The pellicle can be positioned over the mask to provide particle protection during mask handling, inspection, and pumpdown, but which can be removed manually or robotically for lithographic use of the mask.

Klebanoff, Leonard E. (Dublin, CA); Rader, Daniel J. (Albuquerque, NM); Hector, Scott D. (Oakland, CA); Nguyen, Khanh B. (Sunnyvale, CA); Stulen, Richard H. (Livermore, CA)

2002-01-01T23:59:59.000Z

77

Large-Area Zone Plate Fabrication with Optical Lithography  

SciTech Connect (OSTI)

Zone plates as condenser optics for x-ray microscopes offer simple optical designs for both illumination and spectral resolution when used as a linear monochromator. However, due to the long write times for electron beam lithography, both the availability and the size of zone plates for condensers have been limited. Since the resolution provided by the linear monochromator scales almost linearly with the diameter of the zone plate, the full potential for zone plate monochromators as illumination systems for x-ray microscopes has not been achieved. For example, the 10-mm-diameter zone plate has demonstrated a spectral resolution of E/{Delta}E = 700[1], but with a 26-mm-diameter zone plate, the calculated spectral resolution is higher than E/{Delta}E = 3000. These large-area zone plates are possible to fabricate with the leading edge semiconductor lithography tools such as those available at the College of Nanoscale Science and Engineering at the University at Albany. One of the lithography tools available is the ASML TWINSCAN XT: 1950i with 37-nm resolution [2]. A single 300-mm wafer can contain more than 60 fields, each with a large area condenser, and the throughput of the tool can be more than one wafer every minute.

Denbeaux, G. [College of Nanoscale Science and Engineering, University at Albany, 255 Fuller Road, Albany, NY 12203 (United States)

2011-09-09T23:59:59.000Z

78

E-Print Network 3.0 - atom localization lithography Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Atomic Force Microscope Kumar et al... Lithography Parameters Using an ... Source: Yang, Eui-Hyeok - Department of Mechanical Engineering, Stevens Institute of Technology...

79

Nodal photolithography : lithography via far-field optical nodes in the resist  

E-Print Network [OSTI]

In this thesis, I investigate one approach - stimulated emission depletion - to surmounting the diffraction limitation of optical lithography. This approach uses farfield optical nodes to orchestrate reversible, saturable ...

Winston, Donald, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

80

Resolution limits and process latitude of comformable contact nano-lithography  

E-Print Network [OSTI]

Conformable Contact Lithography enables researchers to attain high-resolution lithographic patterning at manageable cost. This thesis characterizes the minimum resolvable feature size and process latitude of Conformable ...

Fucetola, Corey Patrick

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Gray scale x-ray mask  

DOE Patents [OSTI]

The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

Morales, Alfredo M. (Livermore, CA); Gonzales, Marcela (Seattle, WA)

2006-03-07T23:59:59.000Z

82

Nanoimprint lithography with a soft roller and focused UV light for flexible substrates  

Science Journals Connector (OSTI)

This paper presents a nanoimprint lithography system for flexible substrates. With this system, a flexible substrate is pressed on a stamp with a low pressing load, a narrow contact area, and a focused ultraviolet (UV) light. The system efficiently transfers ... Keywords: Flexible substrate, Nanoimprint lithography, Roller, Ultraviolet light

Hyungjun Lim; Geehong Kim; Kee-Bong Choi; Mira Jeong; Jihyeong Ryu; Jaejong Lee

2012-10-01T23:59:59.000Z

83

A microfluidic microbial fuel cell fabricated by soft lithography Fang Qian a,b,  

E-Print Network [OSTI]

A microfluidic microbial fuel cell fabricated by soft lithography Fang Qian a,b, , Zhen He c microfluidic microbial fuel cell (MFC) platform built by soft-lithography tech- niques. The MFC design includes a unique sub-5 lL polydimethylsiloxane soft chamber featuring carbon cloth electrodes and microfluidic

84

Single-molecule transistor fabrication by self-aligned lithography and in situ molecular assembly  

E-Print Network [OSTI]

Single-molecule transistor fabrication by self-aligned lithography and in situ molecular assembly J of single-molecule transistors by self-aligned lithography and in situ molecular assembly. Ultrathin metal fabrication of electrodes that can be bridged by a single molecule remains a significant challenge

Hone, James

85

Low-cost method for producing extreme ultraviolet lithography optics  

DOE Patents [OSTI]

Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

Folta, James A. (Livermore, CA); Montcalm, Claude (Fort Collins, CO); Taylor, John S. (Livermore, CA); Spiller, Eberhard A. (Mt. Kisco, NY)

2003-11-21T23:59:59.000Z

86

Quantum lithography with classical light: Generation of arbitrary patterns  

E-Print Network [OSTI]

Quantum lithography with classical light: Generation of arbitrary patterns Qingqing Sun,1,2 Philip R. Hemmer,3 and M. Suhail Zubairy1,2 1Department of Physics and Institute of Quantum Studies, Texas A&M University, College Station, Texas 77843..., Phys. Rev. Lett. 85, 2733 #1;2000#2;. #3;7#4; S. Kawata, H.-B. Sun, T. Tanaka, and K. Takada, Nature #1;Lon- don#2; 412, 697 #1;2001#2;. #3;8#4; M. D?Angelo, M. V. Chekhova, and Y. Shih, Phys. Rev. Lett. 87, 013602 #1;2001#2;. #3;9#4; A. Pe?er, B...

Sun, Qingqing; Hemmer, Philip R.; Zubairy, M. Suhail

2007-01-01T23:59:59.000Z

87

Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics  

DOE Patents [OSTI]

A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser`s wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known ``feature masks`` of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects. 29 figs.

Ellingson, W.A.; Brada, M.P.

1995-06-20T23:59:59.000Z

88

Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics  

DOE Patents [OSTI]

A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser's wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known "feature masks" of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects.

Ellingson, William A. (Naperville, IL); Brada, Mark P. (Goleta, CA)

1995-01-01T23:59:59.000Z

89

Fabrication and testing of optics for EUV projection lithography  

SciTech Connect (OSTI)

EUV Lithography (EUVL) is a leading candidate as a stepper technology for fabricating the ``0.1 {micro}m generation`` of microelectronic circuits. EUVL is an optical printing technique qualitatively similar to DUV Lithography (DUVL), except that 11-13nm wavelength light is used instead of 193-248nm. The feasibility of creating 0.1{micro}m features has been well-established using small-field EUVL printing tools and development efforts are currently underway to demonstrate that cost-effective production equipment can be engineered to perform full-width ring-field imaging consistent with high wafer throughput rates Ensuring that an industrial supplier base will be available for key components and subsystems is crucial to the success of EUVL. In particular, the projection optics are the heart of the EUVL imaging system, yet they have figure and finish specifications that are beyond the state-of-the-art in optics manufacturing. Thus it is important to demonstrate that industry will be able to fabricate and certify these optics commensurate with EUVL requirements. Indeed, the goal of this paper is to demonstrate that procuring EUVL projection optical substrates is feasible. This conclusion is based on measurements of both commercially-available and developmental substrates. The paper discusses EUVL figure and finish specifications, followed by examples of ultrasmooth and accurate surfaces, and concludes with a discussion of how substrates are measured and evaluated.

Taylor, J. S., LLNL

1998-03-18T23:59:59.000Z

90

P.7 / G. Yoo A Maskless Laser-Write Lithography Processing of Thin-Film Transistors  

E-Print Network [OSTI]

and solar-cell panel processing, as substrate sizes increase, the cost of mask fabrication rapidly increases

Kanicki, Jerzy

91

The New X-Ray Lithography Beamline BL1 At DELTA  

SciTech Connect (OSTI)

Lithography using synchrotron radiation in the x-ray regime provides a powerful method to produce mechanical components of sub-millimeter size with a very good quality for microtechnological applications. In recent years the demand for x-ray lithography beamtime for industrial production of microparts increased rapidly resulting in the development of new experimental endstations at synchrotron radiation sources dedicated for the production of micromechanical devices. We present in this work the layout of the new x-ray lithography beamline BL1 at the synchrotron radiation source DELTA in Dortmund and discuss first results of exposure tests.

Lietz, D.; Paulus, M.; Sternemann, C.; Berges, U.; Hippert, B.; Tolan, M. [Fakultaet Physik / DELTA, TU Dortmund, Maria-Goeppert-Mayer-Str. 2, 44227 Dortmund (Germany)

2010-06-23T23:59:59.000Z

92

Mask roughness induced LER: geometric model at long correlation lengths  

SciTech Connect (OSTI)

Collective understanding of how both the resist and line-edge roughness (LER) on the mask affect the final printed LER has made significant advances. What is poorly understood, however, is the extent to which mask surface roughness couples to image plane LER as a function of illumination conditions, NA, and defocus. Recently, progress has been made in formulating a simplified solution for mask roughness induced LER. Here, we investigate the LER behavior at long correlation lengths of surface roughness on the mask. We find that for correlation lengths greater than 3/NA in wafer dimensions and CDs greater than approximately 0.75/NA, the previously described simplified model, which remains based on physical optics, converges to a 'geometric regime' which is based on ray optics and is independent of partial coherence. In this 'geometric regime', the LER is proportional to the mask slope error as it propagates through focus, and provides a faster alternative to calculating LER in contrast to either full 2D aerial image simulation modeling or the newly proposed physical optics model. Data is presented for both an NA = 0.32 and an NA = 0.5 imaging system for CDs of 22-nm and 50-nm horizontal-line-dense structures.

McClinton, Brittany M.; Naulleau, Patrick P.

2011-02-11T23:59:59.000Z

93

Plasma focus x?ray source for lithography  

Science Journals Connector (OSTI)

A bright and reliable x?ray source for lithography has been developed using plasma focus.Discharge with constant pressure gas one of the features of plasma focus makes the x?ray source system simple and lengthens lifetime. A fine ceramicinsulator made of alumina in place of a conventional Pyrex glass insulator improves system reliability. The system operates for more than 105discharges without maintenance. The lifetime of the system is ten times longer than that of a conventional plasma focusdevice. The resolution of a pattern printed by multishot exposure depends not only on the diameter of pinched plasma but also on the variation of source position. A new spherical electrode surrounding the plasma?focusing space is added to stabilize the location of the spot on the axis by eddy currents which exert the Lorentz force on the plasma. The spot position deviation has become negligibly small as compared with the pinched plasma diameter. The x?ray source size for neon is 1 mm in diameter and 10 mm in length. Consequently 0.4??m fine pattern has been printed with this source. Neon radiates intense x rays in opposite voltage polarity to that of a conventional plasma focus. Polarity inversion enables a very thin beryllium window to be located on the axis with the assistance of magnetic deflector and plasma stop. An x?ray intensity of 5 mJ/cm2/shot 25 cm from the source with an irradiance of 10 mW/cm2 at the 2?Hz repetition rate has been obtained. The plasma focus is a promising x?ray source for lithography from the viewpoint of intensity resolution and lifetime.

Yasuo Kato; Isao Ochiai; Yoshio Watanabe; Seiichi Murayama

1988-01-01T23:59:59.000Z

94

X-ray mask and method for providing same  

DOE Patents [OSTI]

The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.

Morales, Alfredo M. (Pleasanton, CA); Skala, Dawn M. (Fremont, CA)

2004-09-28T23:59:59.000Z

95

X-ray lithography induced radiation damage in CMOS and bipolar devices  

Science Journals Connector (OSTI)

Radiation effects from a synchroton x-ray lithography source on the performance degradation and long term reliability of high performance self-aligned bipolar devices and deep sub-micron CMOS devices are studi...

L. K. Wang

96

High Excitation Efficiency of Channel Plasmon Polaritons in Tailored, UV-Lithography-Defined V-Grooves  

Science Journals Connector (OSTI)

We demonstrate >50% conversion of light to V-groove channel plasmon-polaritons (CPPs) via compact waveguide-termination mirrors. Devices are fabricated using UV-lithography and...

Smith, Cameron L; Thilsted, Anil H; Garcia-Ortiz, Cesar E; Radko, Ilya P; Marie, Rodolphe; Jeppesen, Claus; Vannahme, Christoph; Bozhevolnyi, Sergey I; Kristensen, Anders

97

Modeling the point-spread function in helium-ion lithography  

E-Print Network [OSTI]

We present here a hybrid approach to modeling helium-ion lithography that combines the power and ease-of-use of the Stopping and Range of Ions in Matter (SRIM) software with the results of recent work simulating secondary ...

Winston, Donald

98

Nanometer-precision electron-beam lithography with applications in integrated optics  

E-Print Network [OSTI]

Scanning electron-beam lithography (SEBL) provides sub-10-nm resolution and arbitrary-pattern generation; however, SEBL's pattern-placement accuracy remains inadequate for future integrated-circuits and integrated-optical ...

Hastings, Jeffrey Todd, 1975-

2003-01-01T23:59:59.000Z

99

Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography  

E-Print Network [OSTI]

The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, ...

Berggren, Karl K.

100

Development of a microfluidic device for patterning multiple species by scanning probe lithography  

E-Print Network [OSTI]

Scanning Probe Lithography (SPL) is a versatile nanofabrication platform that leverages microfluidic “ink” delivery systems with Scanning Probe Microscopy (SPM) for generating surface-patterned chemical functionality on the sub-100 nm length scale...

Rivas Cardona, Juan Alberto

2009-06-02T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Contact region fidelity, sensitivity, and control in roll-based soft lithography  

E-Print Network [OSTI]

Soft lithography is a printing process that uses small features on an elastomeric stamp to transfer micron and sub-micron patterns to a substrate. Translating this lab scale process to a roll-based manufacturing platform ...

Petrzelka, Joseph E

2012-01-01T23:59:59.000Z

102

Modeling of multiple-optical-axis pattern-integrated interference lithography systems.  

E-Print Network [OSTI]

??The image quality and collimation in a multiple-optical-axis pattern-integrated interference lithography system are evaluated for an elementary optical system composed of single-element lenses. Image quality… (more)

Sedivy, Donald E.

2014-01-01T23:59:59.000Z

103

Cryogenic etching of nano-scale silicon trenches with resist masks  

Science Journals Connector (OSTI)

Cryogenic silicon etching using SF"6-O"2 at the sub-50 nm scale has been developed for nano-electromechanical systems (NEMS) and nano-photonics systems where high aspect ratio trenches are desired. It was found that the SF"6-O"2 chemistry at cryogenic ... Keywords: Electron beam lithography, Nano-imprint lithography, Nano-scale pattern transfer, Nanofabrication, Plasma etching

Y. Wu; D. L. Olynick; A. Goodyear; C. Peroz; S. Dhuey; X. Liang; S. Cabrini

2011-08-01T23:59:59.000Z

104

Defect Scattering in Graphene  

Science Journals Connector (OSTI)

Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as is evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is 4 times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e2/?h, the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in midgap states.

Jian-Hao Chen; W. G. Cullen; C. Jang; M. S. Fuhrer; E. D. Williams

2009-06-12T23:59:59.000Z

105

Benchmarking EUV mask inspection beyond 0.25 NA  

SciTech Connect (OSTI)

The SEMATECH Berkeley Actinic Inspection Tool (AIT) is an EUV-wavelength mask inspection microscope designed for direct aerial image measurements, and pre-commercial EUV mask research. Operating on a synchrotron bending magnet beamline, the AIT uses an off-axis Fresnel zoneplate lens to project a high-magnification EUV image directly onto a CCD camera. We present the results of recent system upgrades that have improved the imaging resolution, illumination uniformity, and partial coherence. Benchmarking tests show image contrast above 75% for 100-nm mask features, and significant improvements and across the full range of measured sizes. The zoneplate lens has been replaced by an array of user-selectable zoneplates with higher magnification and NA values up to 0.0875, emulating the spatial resolution of a 0.35-NA 4 x EUV stepper. Illumination uniformity is above 90% for mask areas 2-{micro}m-wide and smaller. An angle-scanning mirror reduces the high coherence of the synchrotron beamline light source giving measured {sigma} values of approximately 0.125 at 0.0875 NA.

Goldberg, Kenneth A.; Mochi, Iacopo; Anderson, Erik H.; Rekawa, Seno B.; Kemp, Charles D.; Huh, S.; Han, H.-S.; Naulleau, P.; Gunion, R.F.

2008-09-18T23:59:59.000Z

106

Actinic EUV mask inspection beyond 0.25 NA  

SciTech Connect (OSTI)

The SEMATECH Berkeley Actinic Inspection Tool (AIT) is an EUV-wavelength mask inspection microscope designed for direct aerial image measurements, and pre-commercial EUV mask research. Operating on a synchrotron bending magnet beamline, the AIT uses an off-axis Fresnel zoneplate lens to project a high-magnification EUV image directly onto a CCD camera. We present the results of recent system upgrades that have improved the imaging resolution, illumination uniformity, and partial coherence. Benchmarking tests show image contrast above 75% for 100-nm mask features, and significant improvements and across the full range of measured sizes. The zoneplate lens has been replaced by an array of user-selectable zoneplates with higher magnification and NA values up to 0.0875, emulating the spatial resolution of a 0.35-NA 4x EUV stepper. Illumination uniformity is above 90% for mask areas 2-{micro}m-wide and smaller. An angle-scanning mirror reduces the high coherence of the synchrotron beamline light source giving measured {sigma} values of approximately 0.125 at 0.0875 NA.

Goldberg, Kenneth A.; Mochi, Iacopo; Anderson, Erik H.; Rekawa, Seno. B.; Kemp, Charles D.; Huh, S.; Han, H.-S.; Naulleau, P.; Huh, S.

2008-03-24T23:59:59.000Z

107

Automated real-time detection of defects during machining of ceramics  

DOE Patents [OSTI]

Apparatus for the automated real-time detection and classification of defects during the machining of ceramic components employs an elastic optical scattering technique using polarized laser light. A ceramic specimen is continuously moved while being machined. Polarized laser light is directed onto the ceramic specimen surface at a fixed position just aft of the machining tool for examination of the newly machined surface. Any foreign material near the location of the laser light on the ceramic specimen is cleared by an air blast. As the specimen is moved, its surface is continuously scanned by the polarized laser light beam to provide a two-dimensional image presented in real-time on a video display unit, with the motion of the ceramic specimen synchronized with the data acquisition speed. By storing known ``feature masks`` representing various surface and sub-surface defects and comparing measured defects with the stored feature masks, detected defects may be automatically characterized. Using multiple detectors, various types of defects may be detected and classified. 14 figs.

Ellingson, W.A.; Sun, J.

1997-11-18T23:59:59.000Z

108

Automated real-time detection of defects during machining of ceramics  

DOE Patents [OSTI]

Apparatus for the automated real-time detection and classification of defects during the machining of ceramic components employs an elastic optical scattering technique using polarized laser light. A ceramic specimen is continuously moved while being machined. Polarized laser light is directed onto the ceramic specimen surface at a fixed position just aft of the machining tool for examination of the newly machined surface. Any foreign material near the location of the laser light on the ceramic specimen is cleared by an air blast. As the specimen is moved, its surface is continuously scanned by the polarized laser light beam to provide a two-dimensional image presented in real-time on a video display unit, with the motion of the ceramic specimen synchronized with the data acquisition speed. By storing known "feature masks" representing various surface and sub-surface defects and comparing measured defects with the stored feature masks, detected defects may be automatically characterized. Using multiple detectors, various types of defects may be detected and classified.

Ellingson, William A. (Naperville, IL); Sun, Jiangang (Westmont, IL)

1997-01-01T23:59:59.000Z

109

Soft Lithography Using Acryloxy Perfluoropolyether Composite Tu T. Truong, Rongsheng Lin, Seokwoo Jeon, Hee Hyun Lee, Joana Maria,  

E-Print Network [OSTI]

Soft Lithography Using Acryloxy Perfluoropolyether Composite Stamps Tu T. Truong, Rongsheng Lin composite patterning elements that use a commercially available acryloxy perfluoropolyether (a

Rogers, John A.

110

Submitted to Biosystems 6.12.2003 A MODEL OF VISUAL BACKWARD MASKING.  

E-Print Network [OSTI]

connections, which turn out to support prolonged self-sustained activity. Masking is assumed to arise from

Bugmann, Guido

111

Printing microchips Lithography is used in the manufacture of integrated circuits (ICs) to transfer circuit patterns from a mask to the silicon wafer.  

E-Print Network [OSTI]

; - manufactured and assembled to maximize the imaging efficiency and to reduce distortion; Laser - a high power visible and EUV illumination; Condenser Optics - collects and shapes the EUV beam into a field of 114

112

Proceedings of NAMRI/SME, Vol. 39, 2011 Additive Manufacturing based on Optimized Mask Video  

E-Print Network [OSTI]

Proceedings of NAMRI/SME, Vol. 39, 2011 Additive Manufacturing based on Optimized Mask Video@usc.edu, (213) 740-7829 ABSTRACT Additive manufacturing (AM) processes based on mask image projection and resolution of built components. KEYWORDS Additive manufacturing, Solid freeform fabrication, Mask image

Chen, Yong

113

Affine Defects and Gravitation  

E-Print Network [OSTI]

We argue that the structure general relativity (GR) as a theory of affine defects is deeper than the standard interpretation as a metric theory of gravitation. Einstein-Cartan theory (EC), with its inhomogenous affine symmetry, should be the standard-bearer for GR-like theories. A discrete affine interpretation of EC (and gauge theory) yields topological definitions of momentum and spin (and Yang Mills current), and their conservation laws become discrete topological identities. Considerations from quantum theory provide evidence that discrete affine defects are the physical foundation for gravitation.

R. J. Petti

2014-12-12T23:59:59.000Z

114

Formation of Hierarchical Nanoparticle Pattern Arrays Using Colloidal Lithography and Two-Step Self-Assembly: Microspheres  

E-Print Network [OSTI]

Formation of Hierarchical Nanoparticle Pattern Arrays Using Colloidal Lithography and Two-Step Self of hierarchical nanoparticle arrays and film patterns using a novel combination of colloidal lithography (CL), two-step self-assembly, and reactive-ion etching (RIE). In this approach, a uniform nanoparticle film (15-50 nm

New Mexico, University of

115

Performance of actinic EUVL mask imaging using a zoneplate microscope  

SciTech Connect (OSTI)

The SEMATECH Berkeley Actinic Inspection Tool (AIT) is a dual-mode, scanning and imaging extreme-ultraviolet (EUV) microscope designed for pre-commercial EUV mask research. Dramatic improvements in image quality have been made by the replacement of several critical optical elements, and the introduction of scanning illumination to improve uniformity and contrast. We report high quality actinic EUV mask imaging with resolutions as low as 100-nm half-pitch, (20-nm, 5x wafer equivalent size), and an assessment of the imaging performance based on several metrics. Modulation transfer function (MTF) measurements show high contrast imaging for features sizes close to the diffraction-limit. An investigation of the illumination coherence shows that AIT imaging is much more coherent than previously anticipated, with {sigma} below 0.2. Flare measurements with several line-widths show a flare contribution on the order of 2-3% relative intensity in dark regions above the 1.3% absorber reflectivity on the test mask used for these experiments. Astigmatism coupled with focal plane tilt are the dominant aberrations we have observed. The AIT routinely records 250-350 high-quality images in numerous through-focus series per 8-hour shift. Typical exposure times range from 0.5 seconds during alignment, to approximately 20 seconds for high-resolution images.

Goldberg, K; Naulleau, P; Barty, A; Rekawa, S; Kemp, C; Gunion, R; Salmassi, F; Gullikson, E; Anderson, E; Han, H

2007-09-25T23:59:59.000Z

116

Defect mapping system  

DOE Patents [OSTI]

Apparatus for detecting and mapping defects in the surfaces of polycrystalline materials in a manner that distinguishes dislocation pits from grain boundaries includes a laser for illuminating a wide spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate rastor mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. 20 figures.

Sopori, B.L.

1995-04-11T23:59:59.000Z

117

Counting Defective Parking Functions  

E-Print Network [OSTI]

Suppose that $n$ drivers each choose a preferred parking space in a linear car park with $m$ spaces. Each driver goes to the chosen space and parks there if it is free, and otherwise takes the first available space with larger number (if any). If all drivers park successfully, the sequence of choices is called a parking function. In general, if $k$ drivers fail to park, we have a \\emph{defective parking function} of \\emph{defect} $k$. Let $\\cp(n,m,k)$ be the number of such functions. In this paper, we establish a recurrence relation for the numbers $\\cp(n,m,k)$, and express this as an equation for a three-variable generating function. We solve this equation using the kernel method, and extract the coefficients explicitly: it turns out that the cumulative totals are partial sums in Abel's binomial identity. Finally, we compute the asymptotics of $\\cp(n,m,k)$. In particular, for the case $m=n$, if choices are made independently at random, the limiting distribution of the defect (the number of drivers who fail t...

Cameron, Peter J; Prellberg, Thomas; Schweitzer, Pascal

2008-01-01T23:59:59.000Z

118

Localized defect modes in graphene  

Science Journals Connector (OSTI)

We study the properties of localized vibrational modes associated with structural defects in a sheet of graphene. For the examples of the Stone-Wales defects, one- and two-atom vacancies, many-atom linear vacancies, and adatoms in a honeycomb lattice, we demonstrate that the local defect modes are characterized by stable oscillations with the frequencies lying outside the linear frequency bands of an ideal graphene. In the frequency spectral density of thermal oscillations, such localized defect modes lead to the additional peaks from the right side of the frequency band of the ideal sheet of graphene, which indicate the presence of defects in the graphene flakes.

Alexander V. Savin and Yuri S. Kivshar

2013-09-11T23:59:59.000Z

119

Invisible defects in complex crystals  

E-Print Network [OSTI]

We show that invisible localized defects, i.e. defects that can not be detected by an outside observer, can be realized in a crystal with an engineered imaginary potential at the defect site. The invisible defects are synthesized by means of supersymmetric (Darboux) transformations of an ordinary crystal using band-edge wave functions to construct the superpotential. The complex crystal has an entire real-valued energy spectrum and Bragg scattering is not influenced by the defects. An example of complex crystal synthesis is presented for the Mathieu potential.

S. Longhi; G. Della Valle

2013-06-04T23:59:59.000Z

120

Attractor Flows from Defect Lines  

E-Print Network [OSTI]

Deforming a two dimensional conformal field theory on one side of a trivial defect line gives rise to a defect separating the original theory from its deformation. The Casimir force between these defects and other defect lines or boundaries is used to construct flows on bulk moduli spaces of CFTs. It turns out, that these flows are constant reparametrizations of gradient flows of the g-functions of the chosen defect or boundary condition. The special flows associated to supersymmetric boundary conditions in N=(2,2) superconformal field theories agree with the attractor flows studied in the context of black holes in N=2 supergravity.

Ilka Brunner; Daniel Roggenkamp

2010-02-12T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Proton Beam Lithography at the University of Surrey's Ion Beam Centre , I. Gomez-Morilla  

E-Print Network [OSTI]

the Ion Scan software developed by the National University of Singapore [4]. Simulations with the SRIM in photosensitive glass [3]. This technique has clear advantages in comparison with electron beam lithography and X energy protons have a long range and a low lateral spread making them ideal for exposing thick resist

Webb, Roger P.

122

Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography  

E-Print Network [OSTI]

Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography Michael D. Austin pitch and feature sizes of these applications. Thus, presently, re- searchers have been largely pitch over a large area, its applications in nanogap metal contacts, and a study of fabrication yields

123

Reduction imaging with soft x rays for projection lithography A. A. MacDowell  

E-Print Network [OSTI]

experiments with a 20X reduction Schwarzschild optic produced features as small as 50 nm. It is considered multilayer coated mirrors to image soft x rays at/or near the diffraction limit on to resist coated wafers with projection x-ray lithography. This paper will describe our experimental work using a Schwarzschild camera

Bokor, Jeffrey

124

Mask locations in the SLC final focus region  

SciTech Connect (OSTI)

The location of four sets of masks needed to shield against background in the final focus region of the SLC is shown. The main point of this note is to update the results of Miller and Sens taking into account the recent changes that have been made in the optics of the SLC beams. For the latest beam design we use the TRANSPORT output dated 5-13-83. This design assumes that the final bends will form an S about the interaction point and that the final quadrupoles will be superconducting and will be placed about 8 feet from the interaction point.

Cence, R.J.

1983-07-05T23:59:59.000Z

125

Methane Digesters and Biogas Recovery - Masking the Environmental Consequences of Industrial Concentrated Livestock Production  

E-Print Network [OSTI]

Methane Digesters and Biogas Recovery-Masking theII. METHANE DIGESTERS AND BIOGAs RECOVERY- IN THE2011] METHANE DIGESTERS AND BIOGAS RECOVERY methane, and 64%

Di Camillo, Nicole G.

2011-01-01T23:59:59.000Z

126

SU?FF?J?38: High Precision Mask Based Patient Positioning System  

Science Journals Connector (OSTI)

Purpose: Island mask with infrared (IR) markers is designed for camera based high precision patient positioning system. This system is suitable to monitor head and neck IMRT edentulous and pediatric patents' inter?fractional and intra?fractional movement where current industrial standard bite plate system is not able to apply on the above described patients. Method and Materials: Thermoplastic and Styrofoam are used to make an island mask with the following procedures: First cut the thermoplastic into a predefined template shape; Styrofoam cut into wedge shape with 1 inch in height and has area at least 9×9cm2 for supporting five IR markers. Second put the upper portion of template between philtrum and forehead and wrap the lower portion of template around with the Styrofoam wedge in it. Third make two ear straps to fix the mask through the ears. Exactrac (BrainLAB Inc.) IR camera system is used for this study. The positioning reproducibility of mask system is examined against the bite plate system. The shrinkage of mask and optimal position of placing IR markers are also assessed. Results: The shrinkage of mask is within 1 mm and become stable 30 minutes after the mask has been cooled down. The positioning reproducibility of individual marker is worse for the marker located near the peripheral of the mask and also symmetric pattern of markers is not allowed due to the “ambiguity” of the IR camera system. Therefore the pattern of markers is an irregular shape and markers are located at the flat platform near the center of the mask. The overall positioning reproducibility of mask is within 1.4mm on five non?patient subjects. Conclusion: Our study shows that this mask based patient positioning system is an alternative of patient who can not use bite plate system but needs inter?fractional and intra?fractional movement monitoring.

P Tsai; S Kim; B Lu; J Palta; C Liu

2005-01-01T23:59:59.000Z

127

Sub-10-nm half-pitch electron-beam lithography by using poly(methyl methacrylate) as a negative resist  

E-Print Network [OSTI]

Developing high-resolution resists and processes for electron-beam lithography is of great importance for high-density magnetic storage, integrated circuits, and nanoelectronic and nanophotonic devices. Until now, hydrogen ...

Berggren, Karl K.

128

Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng, Duoming Wang, Dongxia Shi,  

E-Print Network [OSTI]

Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng: Fabrication of graphene nanostructures is of importance for both investigating their intrinsic physical approach for graphene nanostructures. Compared with conventional lithographic fabrication techniques

Zhang, Guangyu

129

2D and 3D periodic templates through holographic interference lithography : photonic and phononic crystals and biomimetic microlens arrays  

E-Print Network [OSTI]

In this thesis a simple technique for controlling structure via holographic interference lithography was established and implemented. Access to various space groups including such important structures as the level set ...

Ullal, Chaitanya K. (Chaitanya Kishore)

2005-01-01T23:59:59.000Z

130

Orthogonal Direct Sum Masking A Smartcard Friendly Computation Paradigm in a Code,  

E-Print Network [OSTI]

analysis (FA) are nowadays well known and most designers of secure embedded systems are aware of them of masks used). A recent line of works known as Low-Entropy Masking Schemes (LEMS) has investigated could be a set of codewords, to reduce the overhead in terms of computational resources and entropy

131

Optimisation of masked ion irradiation damage profiles in YBCO thin films by Monte Carlo simulation  

E-Print Network [OSTI]

Optimisation of masked ion irradiation damage profiles in YBCO thin films by Monte Carlo simulation production with a given mask structure. The results suggest that minimum ion scattering broadening tails with beam energy up to a few hundred keV, though the throughput is intrinsically low [1]. A combination

Webb, Roger P.

132

Auditory Time-Frequency Masking: Psychoacoustical Data and Application to Audio  

E-Print Network [OSTI]

Auditory Time-Frequency Masking: Psychoacoustical Data and Application to Audio Representations models of TF masking currently implemented in some percep- tual audio codecs. In the context of audio models currently implemented in some perceptual audio codecs like MP3 and develop a perceptually relevant

Paris-Sud XI, Université de

133

CHARGED POINT DEFECT IN RUTILE TIO2:FROM DEFECT CHARGE DISTRIBUTION TO DEFECT PHONON FREE ENERGY.  

E-Print Network [OSTI]

??The dominant charged point defects in transition metal oxides can change with temperature (T) and oxygen partial pressure (PO2) to control the electrical properties of… (more)

Li, Xin

2010-01-01T23:59:59.000Z

134

Optical Synchrotron Radiation Beam Imaging with a Digital Mask  

SciTech Connect (OSTI)

We have applied a new imaging/optical masking technique, which employs a digital micro-mirror device (DMD) and optical synchrotron radiation (OSR), to perform high dynamic range (DR) beam imaging at the JLAB Energy Recovery Linac and the SLAC/SPEAR3 Synchrotron Light Source. The OSR from the beam is first focused onto the DMD to produce a primary image; selected areas of this image are spatially filtered by controlling the state of individual micro-mirrors; and finally, the filtered image is refocused onto a CCD camera. At JLAB this technique has been used successfully to view the beam halo with a DR ~ 105. At SPEAR3 the DMD was used to filter out the bright core of the stored beam to study the turn-by-turn dynamics of the 10-3 weaker injected beam. We describe the optical performance, present limitations and our plans to improve the DR of both experimental systems.

Fiorito, R. B. [University of Maryland, College Park, MD (United States); Zhang, H. D. [University of Maryland, College Park, MD (United States); Corbett, W. J. [SLAC, Menlo Park, CA (United States); Fisher, A. S. [SLAC, Menlo Park, CA (United States); Mok, W. Y. [SLAC, Menlo Park, CA (United States); Tian, K. [SLAC, Menlo Park, CA (United States); Douglas, D. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Wilson, F. G. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Zhang, S. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Mitsuhashi, T. M. [KEK, Tsukuba (Japan); Shkvarunets, A. G. [University of Maryland, College Park, MD (United States)

2012-11-01T23:59:59.000Z

135

Gamma-Ray Imaging with the Coded Mask IBIS Telescope  

E-Print Network [OSTI]

The IBIS telescope onboard INTEGRAL, the ESA gamma-ray space mission to be launched in 2002, is a soft gamma-ray (20 keV - 10 MeV) device based on a coded aperture imaging system. We describe here basic concepts of coded masks, the imaging system of the IBIS telescope, and the standard data analysis procedures to reconstruct sky images. This analysis includes, for both the low-energy detector layer (ISGRI) and the high energy layer (PICSIT), iterative procedures which decode recorded shadowgrams, search for and locate sources, clean for secondary lobes, and then rotate and compose sky images. These procedures will be implemented in the Quick Look and Standard Analysis of the INTEGRAL Science Data Center (ISDC) as IBIS Instrument Specific Software.

Goldwurm, A; Gros, A; Stephen, J; Foschini, L; Gianotti, F; Natalucci, L; De Cesare, G; Santo, M D

2000-01-01T23:59:59.000Z

136

"A Novel Objective for EUV Microscopy and EUV Lithography" Inventors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Novel Objective for EUV Microscopy and EUV Lithography" Inventors A Novel Objective for EUV Microscopy and EUV Lithography" Inventors ..--.. Manfred Bitter, Kenneth Hill, Philip Efthimion. This invention is a new x-ray scheme for stigmatic imaging. The scheme consists of one convex spherically bent crystal and one concave spherically bent crystal. The radii of curvature and Bragg reflecting lattice planes of the two crystals are properly matched to eliminate the astigmatism, so that the conditions for stigmatic imaging are met for a particular wavelength. The magnification is adjustable and solely a function of the two Bragg angles or angles of incidence. Although the choice of Bragg angles is constrained by the availability of crystals, this is not a severe limitation for the imaging of plasmas, since a particular wavelength can be

137

Holographic Experiments on Defects  

E-Print Network [OSTI]

Using the AdS/CFT correspondence, we study the anisotropic charge transport properties of both supersymmetric and non-supersymmetric matter fields on (2+1)-dimensional defects coupled to a (3+1)-dimensional ${\\cal N}=4$ SYM "heat bath". We focus on the case of a finite external background magnetic field, finite net charge density and finite mass. At high frequencies, we discover a spectrum of quasiparticle resonances due to the magnetic field and finite density and at small frequencies, we perform a Drude-like expansion around the DC limit. Both of these regimes display many generic features and some features that we attribute to strong coupling, such as a minimum DC conductivity and an unusual behavior of the "cyclotron" and plasmon frequencies, which become related to the resonances found in the conformal case in an earlier paper. We further study the hydrodynamic regime and the relaxation properties, from which the system displays a set of different possible transitions to the collisionless regime. The mas...

Wapler, Matthias C

2009-01-01T23:59:59.000Z

138

Energy Dissipation and Defect Generation for Nanocrystalline...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Dissipation and Defect Generation for Nanocrystalline Silicon Carbide. Energy Dissipation and Defect Generation for Nanocrystalline Silicon Carbide. Abstract: Large-scale molecular...

139

Holographic Experiments on Defects  

E-Print Network [OSTI]

Using the AdS/CFT correspondence, we study the anisotropic charge transport properties of both supersymmetric and non-supersymmetric matter fields on (2+1)-dimensional defects coupled to a (3+1)-dimensional N=4 SYM "heat bath". We focus on the cases of a finite external background magnetic field, finite net charge density and finite mass and their combinations. In this context, we also discuss the limitations due to operator mixing that appears in a few situations and that we ignore in our analysis. At high frequencies, we discover a spectrum of quasi-particle resonances due to the magnetic field and finite density and at small frequencies, we perform a Drude-like expansion around the DC limit. Both of these regimes display many generic features and some features that we attribute to strong coupling, such as a minimum DC conductivity and an unusual behavior of the "cyclotron" and plasmon frequencies, which become related to the resonances found in the conformal case in an earlier paper. We further study the hydrodynamic regime and the relaxation properties, from which the system displays a set of different possible transitions to the collisionless regime. The mass dependence can be cast in two regimes: a generic relativistic behavior dominated by the UV and a non-linear hydrodynamic behavior dominated by the IR. In the massless case, we furthermore extend earlier results from the literature to find an interesting self-duality under a transformation of the conductivity and the exchange of density and magnetic field.

Matthias C Wapler

2009-09-08T23:59:59.000Z

140

Disk Roughness and Defect Monitoring  

Science Journals Connector (OSTI)

Disk surface monitoring and certification refer to the testing and certification of a disk surface in terms of roughness and defect ... as well as the capability to accommodate a flying slider. It includes glide ...

Gang Sheng; Jizhong He; Shuanlin Duan

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Phantom tones and suppressive masking by active nonlinear oscillation of the hair-cell bundle  

Science Journals Connector (OSTI)

...masking (1). Second, a person listening simultaneously to two pure tones f1...linear combinations of f1 and f2 . Any device evinces nonlinearity when...high-fidelity sound receiver (1). A person listening simultaneously to two pure tones...

Jérémie Barral; Pascal Martin

2012-01-01T23:59:59.000Z

142

New MS-Windows-Based Educational Software for Teaching the Sunpath Diagram and Shading Mask Protractor  

E-Print Network [OSTI]

Mask 1 Degrees South Latitude. This combined le sunpath diagram and shading mask yrurr uuurjur u gertical surface facing 30 degrees east of south. FIGURE 7: Data Input Summaryfor the Partial Shading Device. The dimensions of the partial shading..., the shac similarly dimensioned device published in thc In Figure 7 and 8 the front shade is actually the has been rotated 90 degrees, re-sized and moved 1 directly below the horizontal shade. Architectural Graphics Standard is shown in Figure 9...

Oh, J. K. W.; Haberl, J. S.

1996-01-01T23:59:59.000Z

143

Resist trimming technique in CF4/O2 high-density plasmas for sub-0.1 µm MOSFET fabrication using 248-nm lithography  

Science Journals Connector (OSTI)

Resist trimming process using CF4/O2 has been developed for sub-0.1 µm polysilicon gate patterning using conventional 248-nm lithography. This process allows the successful fabrication of 80-nm MOS devices. The trimming step ... Keywords: 248-nm lithography, CF4/O2, critical dimension (CD), polycrystalline silicon (polysilicon), polysilicon gate, resist trimming

Chian-Yuh Sin; Bing-Hung Chen; W. L. Loh; J. Yu; P. Yelehanka; L. Chan

2003-04-01T23:59:59.000Z

144

Photonic assisted light trapping integrated in ultrathin crystalline silicon solar cells by nanoimprint lithography  

E-Print Network [OSTI]

We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic nanopatterning, a better in-coupling and trapping of light is achieved, resulting in an absorption enhancement. The proposed light trapping mechanism can be explained as the superposition of a graded index effect and of the diffraction of light inside the photoactive layer. The absorption enhancement is translated into a 23% increase in short-circuit current, as compared to the benchmark cell, resulting in an increase in energy-conversion efficiency.

Trompoukis, Christos; Depauw, Valérie; Gordon, Ivan; Poortmans, Jef; 10.1063/1.4749810.

2012-01-01T23:59:59.000Z

145

Elevating optical activity: Efficient on-edge lithography of three-dimensional starfish metamaterial  

SciTech Connect (OSTI)

We present an approach for extremely fast, wafer-scale fabrication of chiral starfish metamaterials based on electron beam- and on-edge lithography. A millimeter sized array of both the planar chiral and the true 3D chiral starfish is realized, and their chiroptical performances are compared by circular dichroism measurements. We find optical activity in the visible and near-infrared spectral range, where the 3D starfish clearly outperforms the planar design by almost 2 orders of magnitude, though fabrication efforts are only moderately increased. The presented approach is capable of bridging the gap between high performance optical chiral metamaterials and industrial production by nanoimprint technology.

Dietrich, K., E-mail: dietrich.kay@uni-jena.de; Menzel, C.; Lehr, D.; Puffky, O.; Pertsch, T.; Tünnermann, A.; Kley, E.-B. [Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Hübner, U. [Leibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena (Germany)

2014-05-12T23:59:59.000Z

146

Shedding Light on Nanocrystal Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Shedding Light on Nanocrystal Defects Print Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials are made up of small crystals, called "grains," and what happens at the boundaries between these grains is critical to material properties. Based on computer simulations and electron microscopy analysis, the belief has been that dislocation-mediated plastic deformation becomes inactive below a grain size of at least 10 nanometers, and possibly as large as 30 nanometers.

147

Shedding Light on Nanocrystal Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Shedding Light on Nanocrystal Defects Print Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials are made up of small crystals, called "grains," and what happens at the boundaries between these grains is critical to material properties. Based on computer simulations and electron microscopy analysis, the belief has been that dislocation-mediated plastic deformation becomes inactive below a grain size of at least 10 nanometers, and possibly as large as 30 nanometers.

148

Shedding Light on Nanocrystal Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Shedding Light on Nanocrystal Shedding Light on Nanocrystal Defects Shedding Light on Nanocrystal Defects Print Thursday, 20 June 2013 10:41 Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials are made up of small crystals, called "grains," and what happens at the boundaries between these grains is critical to material properties. Based on computer simulations and electron microscopy analysis, the belief has been that dislocation-mediated plastic deformation becomes inactive below a grain size of at least 10 nanometers, and possibly as large as 30 nanometers.

149

Shedding Light on Nanocrystal Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Shedding Light on Nanocrystal Defects Print Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials are made up of small crystals, called "grains," and what happens at the boundaries between these grains is critical to material properties. Based on computer simulations and electron microscopy analysis, the belief has been that dislocation-mediated plastic deformation becomes inactive below a grain size of at least 10 nanometers, and possibly as large as 30 nanometers.

150

Shedding Light on Nanocrystal Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Shedding Light on Nanocrystal Defects Print Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials are made up of small crystals, called "grains," and what happens at the boundaries between these grains is critical to material properties. Based on computer simulations and electron microscopy analysis, the belief has been that dislocation-mediated plastic deformation becomes inactive below a grain size of at least 10 nanometers, and possibly as large as 30 nanometers.

151

Shedding Light on Nanocrystal Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Shedding Light on Nanocrystal Defects Print Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials are made up of small crystals, called "grains," and what happens at the boundaries between these grains is critical to material properties. Based on computer simulations and electron microscopy analysis, the belief has been that dislocation-mediated plastic deformation becomes inactive below a grain size of at least 10 nanometers, and possibly as large as 30 nanometers.

152

Defect-induced magnetism in graphene  

Science Journals Connector (OSTI)

We study from first principles the magnetism in graphene induced by single carbon atom defects. For two types of defects considered in our study, the hydrogen chemisorption defect and the vacancy defect, the itinerant magnetism due to the defect-induced extended states has been observed. Calculated magnetic moments are equal to 1?B per hydrogen chemisorption defect and 1.12–1.53?B per vacancy defect depending on the defect concentration. The coupling between the magnetic moments is either ferromagnetic or antiferromagnetic, depending on whether the defects correspond to the same or to different hexagonal sublattices of the graphene lattice, respectively. The relevance of itinerant magnetism in graphene to the high-TC magnetic ordering is discussed.

Oleg V. Yazyev and Lothar Helm

2007-03-08T23:59:59.000Z

153

Development of compact extreme ultraviolet interferometry for on-line test of lithography cameras  

SciTech Connect (OSTI)

Extreme ultraviolet lithography (EUVL) is a candidate technology for the microelectronics industry with design rules for 0.1 {micro}m features and beyond. When characterizing an extreme ultraviolet (EUV) lithographic optical system, visible light interferometry is limited to measuring wavefront aberration caused by surface figure error while failing to measure wavefront errors induced by the multilayer coatings. This fact has generated interest in developing interferometry at an EUV camera`s operational wavelength (at-wavelength testing), which is typically around 13 nm. While a laser plasma source (LPS) is being developed as a lithography production source, it has generally been considered that only an undulator located at a synchrotron facility can provide the necessary laser-like point source for EUV interferometry. Although an undulator-based approach has been successfully demonstrated, it would be advantageous to test a camera in its operational configuration. The authors are developing the latter approach by utilizing extended source size schemes to provide usable flux throughput. A slit or a grating mounted in front of the source can provide the necessary spatial coherence for Ronchi interferometry. The usable source size is limited only by the well-corrected field of view of the camera under test. The development of this interferometer will be presented.

Ray-Chaudhuri, A.K.; Nissen, R.P.; Krenz, K.D.; Stulen, R.H. [Sandia National Labs., Livermore, CA (United States); Sweatt, W.C.; Warren, M.E.; Wendt, J.R.; Kravitz, S.H. [Sandia National Labs., Albuquerque, NM (United States); Bjorkholm, J.E. [AT and T Bell Labs., Holmdel, NJ (United States)

1998-12-31T23:59:59.000Z

154

A Comparison of Photoresist Resolution Metrics using 193 nm and EUV Lithography  

SciTech Connect (OSTI)

Image blur due to chemical amplification represents a fundamental limit to photoresist performance and manifests itself in many aspects of lithographic performance. Substantial progress has been made in linking image blur with simple resolution metrics using EUV lithography. In this presentation, they examine performance of 193 nm resist and EUV resist systems using modulation transfer function, corner rounding, and other resolution metrics. In particular, they focus on cross-comparisons in which selected EUV and 193 nm resist are evaluated using both EUV and 193 nm lithography. Simulation methods linking 193 nm and EUV performance will be described as well. Results from simulation indicate that image blur in current generation 193 nm photoresists is comparable to that of many EUV resists, but that ultra-low diffusion materials designs used in very high resolution EUV resists can result in substantially lower blur. In addition to detailing correlations between EUV and 193 nm experimental methods, they discuss their utility in assessing performance needs of future generation photoresists.

Jones, Juanita; Pathak, Piyush; Wallow, Thomas; LaFontaine, Bruno; Deng, Yunfei; Kim, Ryoung-han; Kye, Jongwook; Levinson, Harry; Naulleau, Patrick; Anderson, Chris

2007-08-20T23:59:59.000Z

155

Wafer and reticle positioning system for the Extreme Ultraviolet Lithography Engineering Test Stand  

SciTech Connect (OSTI)

This paper is an overview of the wafer and reticle positioning system of the Extreme Ultraviolet Lithography (EUVL) Engineering Test Stand (ETS). EUVL represents one of the most promising technologies for supporting the integrated circuit (IC) industry's lithography needs for critical features below 100nm. EUVL research and development includes development of capabilities for demonstrating key EUV technologies. The ETS is under development at the EUV Virtual National Laboratory, to demonstrate EUV full-field imaging and provide data that supports production-tool development. The stages and their associated metrology operated in a vacuum environment and must meet stringent outgassing specifications. A tight tolerance is placed on the stage tracking performance to minimize image distortion and provide high position repeatability. The wafer must track the reticle with less than {+-}3nm of position error and jitter must not exceed 10nm rms. To meet these performance requirements, magnetically levitated positioning stages utilizing a system of sophisticated control electronics will be used. System modeling and experimentation have contributed to the development of the positioning system and results indicate that desired ETS performance is achievable.

WRONOSKY,JOHN B.; SMITH,TONY G.; CRAIG,MARCUS J.; STURGIS,BEVERLY R.; DARNOLD,JOEL R.; WERLING,DAVID K.; KINCY,MARK A.; TICHENOR,DANIEL A.; WILLIAMS,MARK E.; BISCHOFF,PAUL

2000-01-27T23:59:59.000Z

156

Nano-imprinting lithography of P(VDF–TrFE–CFE) for flexible freestanding MEMS devices  

Science Journals Connector (OSTI)

Thermoplastic nano-imprinting lithography (T-NIL) has been used for the first time as a method of creating freestanding smooth and patterned membranes of micron scale thickness using poly (vinylidene fluoride–trifluoroethylene–chlorofluoroethylene) [P(VDF–TrFE–CFE)]. PVDF and its copolymers and terpolymers cannot be processed using classical lithography techniques because it is incompatible with most solvents and photoresist developers. In this work, patterning at micron scale resolution and creating freestanding layers is facilitated by means of a hydrophobic dodecyltrichlorosilane layer deposited on the silicon (Si) prior to imprinting. This surface treatment reduces the adhesion between the polymer and Si substrate or stamp, aiding with mould release. A sacrificial layer beneath a spin-coated layer of P(VDF–TrFE–CFE) is presented as an alternative method of creating freestanding membranes. The latter method was used in conjunction with exploiting the thermoplastic properties of P(VDF–TrFE–CFE) during T-NIL to improve the quality of the patterned freestanding layers. The cured membrane thicknesses ranged from 0.4–5.8 ?m with diameters of centimeters order of magnitude. The processes presented here comprise a basis for integrating P(VDF–TrFE–CFE) as an active material in three dimensional electro-active polymeric microelectromechanical system (MEMS) devices.

Jenny Shklovsky; Leeya Engel; Yelena Sverdlov; Yosi Shacham-Diamand; Slava Krylov

2012-01-01T23:59:59.000Z

157

Ultra-lightweight nanorelief networks : photopatterned microframes  

E-Print Network [OSTI]

Lightweight nano-network structures in polymers have been fabricated and investigated for their mechanical properties. Fabrication techniques via holographic interference lithography and phase mask lithography were implemented ...

Choi, Taeyi

2007-01-01T23:59:59.000Z

158

Fully scaled 0.5 ?m MOS cicuits by synchroton X-ray lithography: Resist systems and line width control  

Science Journals Connector (OSTI)

To test the line width control of typical resist systems in x-ray lithography, we have developed and utilized x-ray resist processes for all levels in the fabrication of NMOS and CMOS devices with 0.5 ?m ground rules. Results from line width control studies will be discussed along with the process latitude from the resist systems.

D. Seeger; K. Kwietniak; D. Crockatt; A. Wilson; J. Warlaumont

1989-01-01T23:59:59.000Z

159

Fabrication of large area 100 nm pitch grating by spatial frequency doubling and nanoimprint lithography for subwavelength  

E-Print Network [OSTI]

Fabrication of large area 100 nm pitch grating by spatial frequency doubling and nanoimprint nm pitch gratings over a large area 10 cm2 using a simple, low-cost, fast process. This method doubling and 2 pattern replication using nanoimprint lithography. The form birefringence of a 100 nm pitch

160

Printed wax masks for 254 nm deep-UV pattering of PMMA-based microfluidics  

Science Journals Connector (OSTI)

This paper reports a new technique for masking deep-UV exposure of poly(methyl methacrylate) (PMMA) using a printed wax mask. This technique provides an inexpensive and bulk fabrication method for PMMA structures. The technique involves the direct printing of the mask onto a polymer sheet using a commercial wax printer. The wax layer was then transferred to a PMMA substrate using a thermal laminator, exposed using deep-UV (with a wavelength of 254 nm), developed in an IPA:water solution, and completed by bonding on a PMMA cap layer. A sample microfluidic device fabricated with this method is also presented, with the microchannel as narrow as 50 µm. The whole process is easy to perform without the requirement for any microfabrication facilities.

Yiqiang Fan; Yang Liu; Huawei Li; Ian G Foulds

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices  

DOE Patents [OSTI]

A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

2001-01-01T23:59:59.000Z

162

Design and Synthesis of a Photoaromatization-Based Two-Stage Photobase Generator for Pitch Division Lithography  

E-Print Network [OSTI]

Design and Synthesis of a Photoaromatization-Based Two-Stage Photobase Generator for Pitch Division in such a resist has twice the pitch of the projected mask image. Unfortunately, when sub-100 nm features

Turro, Nicholas J.

163

Top-surface imaging resists for lithography with strongly attenuated radiation  

SciTech Connect (OSTI)

Strong resist photoabsorption at wavelengths below 248 nm necessitates the use of a thin layer imaging (TLI) scheme for microlithography using 193 nm, 157 nm, or 13.4 nm radiation. Previous to this work, a TLI process commonly known as silylated top surface imaging (TSI) was developed by a Sandia/AT and T team for use in extreme ultraviolet lithography (EUVL) at 13.4 nm. Using this bilayer process, 0.13 {micro}m resolution with 87{degree} sidewalls in 0.7 {micro}m of resist was achieved for EUV exposures. New imaging layer polymers, silylation reagents and crosslinkers, and process conditions were screened for improvement in this TSI process with the ultimate goal of demonstrating a resist technology capable of 0.10 {micro}m critical dimension (CD). The results of these attempted improvements to the TSI process are described in this report.

Ray-Chaudhuri, A.; Kubiak, G.; Henderson, C.; Wheeler, D.; Pollagi, T.

1997-09-01T23:59:59.000Z

164

Organic solvent-free water-developable sugar resist material derived from biomass in green lithography  

Science Journals Connector (OSTI)

Abstract We have demonstrated an organic solvent-free water-developable branched sugar resist material derived from biomass for its use in green electron beam lithography. This emphasizes the use of plant products instead of conventionally used tetramethylammonium hydroxide and organic solvents. The rationally designed water-developable branched sugar resist material developed in this study can be patterned with an excellent sensitivity of 7 ?C/cm2 and a resolution of 50–200 nm lines. In addition, it indicated sufficient thermal stability at ?180 °C, acceptable CF4 etch selectivity with a hardmask material, 42–53% rate of chemical reaction of acryloyl groups affected by the tacticity of branched sugar chain polymers, and developable in pure water at 23 °C for 60 s.

Satoshi Takei; Akihiro Oshima; Takumi Ichikawa; Atsushi Sekiguchi; Miki Kashiwakura; Takahiro Kozawa; Seiichi Tagawa; Tomoko G. Oyama; Syoji Ito; Hiroshi Miyasaka

2014-01-01T23:59:59.000Z

165

Study of nano imprinting using soft lithography on Krafty glue and PVDF polymer thin films  

SciTech Connect (OSTI)

The present work reveals soft lithography strategy based on self assembly and replica molding for carrying out micro and nanofabrication. It provides a convenient, effective and very low cost method for the formation and manufacturing of micro and nano structures. Al-layer of compact disc (sony CD-R) used as a stamp with patterned relief structures to generate patterns and structures with pattern size of 100nm height, 1.7 ?m wide. In literature, PDMS (Polydimethylsiloxane) solution is widely used to get negative copy of the Al-layer. In this work, we have used inexpensive white glue (Polyvinylacetate + water), 15gm (?5) and PVDF (Polyvinylidene difluoride) spin coated films and successfully transferred the nano patterns of Al layer on to white glue and PVDF films.

Sankar, M. S. Ravi, E-mail: rameshg.phy@pondiuni.edu; Gangineni, Ramesh Babu, E-mail: rameshg.phy@pondiuni.edu [Department of Physics, Pondicherry University, R. V. Nagar, Kalapet, Puducherry - 605014 (India)

2014-04-24T23:59:59.000Z

166

Gd plasma source modeling at 6.7 nm for future lithography  

SciTech Connect (OSTI)

Plasmas containing gadolinium have been proposed as sources for next generation lithography at 6.x nm. To determine the optimum plasma conditions, atomic structure calculations have been performed for Gd{sup 11+} to Gd{sup 27+} ions which showed that n = 4 - n = 4 resonance transitions overlap in the 6.5-7.0 nm region. Plasma modeling calculations, assuming collisional-radiative equilibrium, predict that the optimum temperature for an optically thin plasma is close to 110 eV and that maximum intensity occurs at 6.76 nm under these conditions. The close agreement between simulated and experimental spectra from laser and discharge produced plasmas indicates the validity of our approach.

Li Bowen; Dunne, Padraig; O'Sullivan, Gerry [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Higashiguchi, Takeshi; Yugami, Noboru [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), and Optical Technology Innovation Center (OpTIC), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Japan Science and Technology Agency, CREST, 4-1-8 Honcho, Kanagawa, Saitama 332-0012 (Japan); Otsuka, Takamitsu [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), and Optical Technology Innovation Center (OpTIC), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Jiang, Weihua [Department of Electrical Engineering, Nagaoka University of Technology, Kami-tomiokamachi 1603-1, Nagaoka, Niigata 940-2188 (Japan); Endo, Akira [Research Institute of Science and Engineering, Waseda University, 3-4-1, Okubo, Shinjuku-ku, Tokyo 169-0072 (Japan)

2011-12-05T23:59:59.000Z

167

Effects of Stone-Wales and vacancy defects in atomic-scale friction on defective graphite  

SciTech Connect (OSTI)

Graphite is an excellent solid lubricant for surface coating, but its performance is significantly weakened by the vacancy or Stone-Wales (SW) defect. This study uses molecular dynamics simulations to explore the frictional behavior of a diamond tip sliding over a graphite which contains a single defect or stacked defects. Our results suggest that the friction on defective graphite shows a strong dependence on defect location and type. The 5-7-7-5 structure of SW defect results in an effectively negative slope of friction. For defective graphite containing a defect in the surface, adding a single vacancy in the interior layer will decrease the friction coefficients, while setting a SW defect in the interior layer may increase the friction coefficients. Our obtained results may provide useful information for understanding the atomic-scale friction properties of defective graphite.

Sun, Xiao-Yu [Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan 430072 (China); Key Laboratory of Hubei Province for Water Jet Theory and New Technology, Wuhan University, Wuhan 430072 (China); Wu, RunNi; Xia, Re [Key Laboratory of Hubei Province for Water Jet Theory and New Technology, Wuhan University, Wuhan 430072 (China); Chu, Xi-Hua; Xu, Yuan-Jie, E-mail: yj-xu@whu.edu.cn [Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan 430072 (China)

2014-05-05T23:59:59.000Z

168

Theory of masking with codewords in hardware: low-weight dth-order correlation-immune Boolean  

E-Print Network [OSTI]

, d = 4) and (n = 10, d {4, 5}). These results set new bounds for the minimal number of lines difficulty when design- ing a masking scheme is to pass through the substitution boxes (sboxes). Clas- sical with the entropy. In this article, we are interested in a masking solution with- out timing overhead and a limited

169

Annual variation in primary moult parameters in Cape Weavers, Southern Masked Weavers and Southern Red  

E-Print Network [OSTI]

and Southern Red Bishops in the Western Cape, South Africa #12;160 #12;161 Annual variation in primary moult parameters in Cape Weavers, Southern Masked Weavers and Southern Red Bishops in the Western Cape, South Africa Abstract Duration of primary moult was similar in Cape Weavers and Southern Red Bishops (96 days

de Villiers, Marienne

170

Geographic structure of masked stingray in the Indo-Malay-Papua archipelago  

E-Print Network [OSTI]

is the origin of the high marine biodiversity in the Indo-Malay-Papuan archipelago at the core of the Coral Triangle, which is the global epicentre for marine biodiversity (P.H. Barber, J. Biogeogr. 2009). DoesAssociationforTropicalBiologyandConservation,"Tropical biodiversity:survivingthefood,energyandclimatecrisis",19-23July2010,Denpasar The blue-spotted or masked

171

Investigation of user complaints of sound masking delivered from underfloor air distribution grilles.  

Science Journals Connector (OSTI)

A LEED?Gold certified government building includes six floors of open?plan office space that are equipped with electronic sound masking delivered from a raised floor having under?floor air distribution (UFAD). Results of user polling show mixed results for acoustic satisfaction with significant complaints about speech privacy and noise from the systems interfering with users’ ability to work. This research focuses on this dissatisfaction the general conflict between speech privacy ease of verbal communication and acceptance of noise?generating treatments. Little research has been done on masking delivered via UFAD so it was also desired to further the understanding of this design as part of a larger research program by the Federal government on Green Buildings. Specific objectives were to develop and test possible remedies for this system and improve planning of future facilities that may have masking via UFAD. On?site measurements of masking and HVAC spectra as well as noise reduction and observations for various conditions were made. Post?measurement data analysis was conducted and experimental remedies were developed and tested. The results and recommendations will be presented.

Mark Rogers

2011-01-01T23:59:59.000Z

172

Spatial release from masking of aerial tones in pinnipeds Marla M. Holta  

E-Print Network [OSTI]

such as those of conspecifics, prey, or predators. In both air and water, pinnipeds seals, sea lions-located. In this study, SRM was investigated in a harbor seal, who naturally lacks pinnae, and California sea lion, who where co-located, masked thresholds were lower by as much as 19 and 12 dB in the harbor seal and sea

Reichmuth, Colleen

173

Improving Patch-Based Synthesis by Learning Patch Masks Nima Khademi Kalantari1  

E-Print Network [OSTI]

Improving Patch-Based Synthesis by Learning Patch Masks Nima Khademi Kalantari1 Eli Shechtman2, Seattle, WA Abstract Patch-based synthesis is a powerful framework for nu- merous image and video editing applications such as hole- filling, retargeting, and reshuffling. In all these applica- tions, a patch

Sen, Pradeep

174

Planck CMB Anomalies: Astrophysical and Cosmological Foregrounds and the Curse of Masking  

E-Print Network [OSTI]

Understanding the origin of reported anomalies in the CMB is fundamental to either validate the standard model of cosmology or to explore new physics. Their confirmation with Planck data suggests they are not due to a problem in WMAP or Planck data. We investigate three other possible issues: 1) the trade-off between minimising systematics due to foreground contamination (with a conservative mask) and minimising systematics due to masking, 2) astrophysical foregrounds (the kinetic Doppler quadrupole and kinetic Sunyaev-Zel'dovich effect), and 3) secondary cosmological signals (the integrated Sachs-Wolfe effect). We address the masking issue by considering new procedures that use both WMAP and Planck to produce higher quality full-sky maps using the sparsity methodology (LGMCA maps). We show the impact of masking is dominant over that of residual foregrounds, and the LGMCA full-sky maps can be used without further processing to study anomalies. We consider four official Planck PR1 and two LGMCA CMB maps. Analy...

Rassat, A; Paykari, P; Sureau, F; Bobin, J

2014-01-01T23:59:59.000Z

175

Comparison of level discrimination, increment detection, and comodulation masking release in the audio-and  

E-Print Network [OSTI]

in the audio- and envelope-frequency domains Paul C. Nelson Department of Biomedical and Chemical Engineering for certain observations made in detection and masking experiments in the audio-frequency domain. Two; these variations are referred to as fine structure and are determined by the instantaneous audio fre- quency

Carney, Laurel H.

176

Low temperature a - Si : H photodiodes and flexible image sensor arrays patterned by digital lithography  

Science Journals Connector (OSTI)

Hydrogenated amorphous silicon-based image sensor arrays were fabricated on polyethylene naphthalate substrates with photodiodes optimized for process temperatures of 150 ° C . An optimal i -layer thickness was determined to minimize carrier recombination and to maintain sufficient light absorption and acceptable leakage current. Patterning of the thin-film transistor backplane was accomplished using ink-jet printed etch masks. A flexible image sensor is demonstrated with 75 dots ? in. resolution over 180 × 180 pixels and with sensitivity of 1.2 pW ? cm 2 .

Tse Nga Ng; Rene A. Lujan; Sanjiv Sambandan; Robert A. Street; Scott Limb; William S. Wong

2007-01-01T23:59:59.000Z

177

Space-time defects and teleparallelism  

E-Print Network [OSTI]

We consider the class of space-time defects investigated by Puntigam and Soleng. These defects describe space-time dislocations and disclinations (cosmic strings), and are in close correspondence to the actual defects that arise in crystals and metals. It is known that in such materials dislocations and disclinations require a small and large amount of energy, respectively, to be created. The present analysis is carried out in the context of the teleparallel equivalent of general relativity (TEGR). We evaluate the gravitational energy of these space-time defects in the framework of the TEGR and find that there is an analogy between defects in space-time and in continuum material systems: the total gravitational energy of space-time dislocations and disclinations (considered as idealized defects) is zero and infinit, respectively.

J. W. Maluf; A. Goya

2001-10-24T23:59:59.000Z

178

EUV actinic defect inspection and defect printability at the sub-32 nm half pitch  

E-Print Network [OSTI]

at the Sub-32 run Half-pitch Sungmin Huha, Patrick Kearneya,below the 32 nm half-pitch node. Phase defect printabilityfor the sub-32 nm half-pitch technology node. Defect

Huh, Sungmin

2010-01-01T23:59:59.000Z

179

Polythiophene-based charge dissipation layer for electron beam lithography of zinc oxide and gallium nitride  

Science Journals Connector (OSTI)

The ability of thin polythiophene layers to dissipate accumulated charge in the electron beam lithography (EBL) of wide bandgap semiconductors such as zinc oxide and gallium nitride is demonstrated. A quick and inexpensive processing method is demonstrated for EBL exposure of dense and high-resolution patterns in a hydrogen silsesquioxane (HSQ) negative-tone resistdeposited on bulk ZnO samples and with GaN/AlN on sapphire substrates. For the former experimental results are given for three different cases: where no charge dissipation layer was used as well as cases where 40-nm-thick Al and 100-nm-thick conductive polymer layers were used on the top of the HSQ resist. For the latter material EBL exposure was investigated for pure HSQ and for HSQ with a thin conductive polymer layer on top. Based on the scanning electron microscope observations of the resulting photonic crystal(PhC) pattern conventional Al and the proposed polymer approach were compared. Good agreement between these results is reported while the new method considerably simplifies sample processing. Spin-coatable conducting polymer may be easily removed due to its solubility in water which makes it a perfect solution for the processing of amphoteric oxide samples i.e. zinc oxide. Gallium nitride processing also benefits from polymer dissipation layer usage due to extended exposure range and the avoidance of dense pattern overexposure in HSQ.

R. Dylewicz; S. Lis; R. M. De La Rue; F. Rahman

2010-01-01T23:59:59.000Z

180

Lady Chatterley's Lover as a rhetorical response: justification for D. H. Lawrence's mask of Oliver Mellors  

E-Print Network [OSTI]

: Robert Newman (Chairman of Committee) Sam Dra (Manber) Wil iam Owen (Nember) H in all ( a o f rtment) December 1988 Lady Chatterley's Lover as a Rhetorical Response: Justification for D. H. Lawrence's Mask of Oliver Nellors. (December 1988...) David Scott McCracken, B. A. ; Belxant College Chairman of Advisory Caranittee: Dr. Robert Newman Literary scholars debate whether or not Lawrence is worthy of the distinction of successfully combining the poet and the polemcist. Several critics...

McCracken, David Scott

2012-06-07T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

3D Printing Phosphonium Ionic Liquid Networks with Mask Projection Microstereolithography  

Science Journals Connector (OSTI)

3D Printing Phosphonium Ionic Liquid Networks with Mask Projection Microstereolithography ... Additive manufacturing, often referred to as 3D printing, where objects are constructed in a layer-by-layer fashion, enables the design and creation of geometrically complex objects with tailored topology, and thus, functionality. ... Herein, we report photopolymerization strategies coupled with additive manufacturing to achieve 3D printed phosphonium PILs in order to demonstrate the first example of 3D printing of an ion-conducting polymer. ...

Alison R. Schultz; Philip M. Lambert; Nicholas A. Chartrain; David M. Ruohoniemi; Zhiyang Zhang; Chainika Jangu; Musan Zhang; Christopher B. Williams; Timothy E. Long

2014-11-06T23:59:59.000Z

182

Computer-aided engineering system for design of sequence arrays and lithographic masks  

DOE Patents [OSTI]

An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

Hubbell, E.A.; Morris, M.S.; Winkler, J.L.

1996-11-05T23:59:59.000Z

183

Compton telescope with coded aperture mask: Imaging with the INTEGRAL/IBIS Compton mode  

E-Print Network [OSTI]

Compton telescopes provide a good sensitivity over a wide field of view in the difficult energy range running from a few hundred keV to several MeV. Their angular resolution is, however, poor and strongly energy dependent. We present a novel experimental design associating a coded mask and a Compton detection unit to overcome these pitfalls. It maintains the Compton performance while improving the angular resolution by at least an order of magnitude in the field of view subtended by the mask. This improvement is obtained only at the expense of the efficiency that is reduced by a factor of two. In addition, the background corrections benefit from the coded mask technique, i.e. a simultaneous measurement of the source and background. This design is implemented and tested using the IBIS telescope on board the INTEGRAL satellite to construct images with a 12' resolution over a 29 degrees x 29 degrees field of view in the energy range from 200 keV to a few MeV. The details of the analysis method and the resulting telescope performance, particularly in terms of sensitivity, are presented.

M. Forot; P. Laurent; F. Lebrun; O. Limousin

2007-08-28T23:59:59.000Z

184

Coulomb screening in graphene with topological defects  

E-Print Network [OSTI]

We analyze the screening of an external Coulomb charge in gapless graphene cone, which is taken as a prototype of a topological defect. In the subcritical regime, the induced charge is calculated using both the Green's function and the Friedel sum rule. The dependence of the polarization charge on the Coulomb strength obtained from the Green's function clearly shows the effect of the conical defect and indicates that the critical charge itself depends on the sample topology. Similar analysis using the Friedel sum rule indicates that the two results agree for low values of the Coulomb charge but differ for the higher strengths, especially in the presence of the conical defect. For a given subcritical charge, the transport cross-section has a higher value in the presence of the conical defect. In the supercritical regime we show that the coefficient of the power law tail of polarization charge density can be expressed as a summation of functions which vary log periodically with the distance from the Coulomb impurity. The period of variation depends on the conical defect. In the presence of the conical defect, the Fano resonances begin to appear in the transport cross-section for a lower value of the Coulomb charge. For both sub and supercritical regime we derive the dependence of LDOS on the conical defect. The effects of generalized boundary condition on the physical observables are also discussed.

Baishali Chakraborty; Kumar S. Gupta; Siddhartha Sen

2015-02-16T23:59:59.000Z

185

Irradiation-induced defect clustering and amorphization in silicon...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Irradiation-induced defect clustering and amorphization in silicon carbide. Irradiation-induced defect clustering and amorphization in silicon carbide. Abstract: Previous computer...

186

Magnesium behavior and structural defects in Mg+ ion implanted...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide. Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide. Abstract: As a...

187

Modification of Defect Structures in Graphene by Electron Irradiation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Modification of Defect Structures in Graphene by Electron Irradiation: Ab Initio Molecular Dynamics Simulations. Modification of Defect Structures in Graphene by Electron...

188

Exploring the interaction between lithium ion and defective graphene...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Exploring the interaction between lithium ion and defective graphene surface using dispersion corrected DFT studies. Exploring the interaction between lithium ion and defective...

189

Energetics of Defects on Graphene through Fluorination. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Defects on Graphene through Fluorination. Energetics of Defects on Graphene through Fluorination. Abstract: In the present study, we used FGS5 as the substrate and implemented...

190

Paving the Way to Nanoelectronics 16 nm and Smaller  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Paving the Way to Paving the Way to Nanoelectronics 16 nm and Smaller Paving the Way to Nanoelectronics 16 nm and Smaller Print Wednesday, 30 March 2011 00:00 As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over the past decade, significant challenges remain, including defect-free mask fabrication (see Science Highlight Investigating Extreme Ultraviolet Lithography Mask Defects), and the development of ultrahigh-resolution photoresist-a light-sensitive material used to form a patterned coating-that simultaneously supports low line-edge roughness (LER), high sensitivity, and sub-22-nm resolution. Using the SEMATECH Berkeley Microfield Exposure Tool (MET) at ALS Beamline 12.0.1.3, advanced EUV photoresist research can be performed while high-power stand-alone light sources are still being developed. High-quality 16-nm lines and spaces have been printed using the MET, representing the highest resolution ever achieved from a single-exposure projection optical lithography tool.

191

Paving the Way to Nanoelectronics 16 nm and Smaller  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Paving the Way to Nanoelectronics 16 nm and Smaller Print Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over the past decade, significant challenges remain, including defect-free mask fabrication (see Science Highlight Investigating Extreme Ultraviolet Lithography Mask Defects), and the development of ultrahigh-resolution photoresist-a light-sensitive material used to form a patterned coating-that simultaneously supports low line-edge roughness (LER), high sensitivity, and sub-22-nm resolution. Using the SEMATECH Berkeley Microfield Exposure Tool (MET) at ALS Beamline 12.0.1.3, advanced EUV photoresist research can be performed while high-power stand-alone light sources are still being developed. High-quality 16-nm lines and spaces have been printed using the MET, representing the highest resolution ever achieved from a single-exposure projection optical lithography tool.

192

Paving the Way to Nanoelectronics 16 nm and Smaller  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Paving the Way to Nanoelectronics 16 nm and Smaller Print Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over the past decade, significant challenges remain, including defect-free mask fabrication (see Science Highlight Investigating Extreme Ultraviolet Lithography Mask Defects), and the development of ultrahigh-resolution photoresist-a light-sensitive material used to form a patterned coating-that simultaneously supports low line-edge roughness (LER), high sensitivity, and sub-22-nm resolution. Using the SEMATECH Berkeley Microfield Exposure Tool (MET) at ALS Beamline 12.0.1.3, advanced EUV photoresist research can be performed while high-power stand-alone light sources are still being developed. High-quality 16-nm lines and spaces have been printed using the MET, representing the highest resolution ever achieved from a single-exposure projection optical lithography tool.

193

Generalized quantum defect methods in quantum chemistry  

E-Print Network [OSTI]

The reaction matrix of multichannel quantum defect theory, K, gives a complete picture of the electronic structure and the electron - nuclear dynamics for a molecule. The reaction matrix can be used to examine both bound ...

Altunata, Serhan

2006-01-01T23:59:59.000Z

194

Sleeve installations speed pipeline defect repair  

SciTech Connect (OSTI)

Repairing defects in pipelines can be a major challenge for pipeline companies or contractors. To reduce cost and eliminate unscheduled shut downs, pipeline operating companies have adopted ``in-service`` repair methods to restore overall integrity of the pipeline without taking it out of service. Interprovincial Pipe Line Co. has undertaken an aggressive approach to this ``in-service`` repair method by using a developed sleeving system for repairing leaking and non-leaking defects. A structural reinforcement sleeve consists of two non-fillet welded collars (one on each side of the defect) and a full encirclement sleeve welded on top of these collars. The annular space between the pipe and sleeve is filled with a hardenable, non-shrinking epoxy. Three different pressure vessel sleeves can be used for repairing certain defects. They can be used in combination with the pre-stressed sleeve or for independent repairs. This paper reviews the performance and installation of these sleeves.

Friedrich, J.; Smith, J.

1995-12-01T23:59:59.000Z

195

INNOVATIVE EDDY CURRENT PROBE FOR MICRO DEFECTS  

SciTech Connect (OSTI)

This paper reports the development of an innovative eddy current (EC) probe, and its application to micro-defects on the root of the Friction Stir Welding (FSW). The new EC probe presents innovative concept issues, allowing 3D induced current in the material, and a lift-off independence. Validation experiments were performed on aluminium alloys processed by FSW. The results clearly show that the new EC probe is able to detect and sizing surface defects about 60 microns depth.

Santos, Telmo G.; Vilaca, Pedro; Quintino, Luisa [IDMEC, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Santos, Jorge dos [GKSS, Max-Planck-Street 1, D-21502 Geesthacht (Germany); Rosado, Luis [IST, UTL, Av. Rovisco Pais, 1049-001 Lisbon (Portugal)

2010-02-22T23:59:59.000Z

196

Intrinsic structural defects in monolayer molybdenum disulfide  

SciTech Connect (OSTI)

Monolayer molybdenum disulfide (MoS2) is a two-dimensional direct band gap semiconductor with distinctive mechanical, electronic, optical and chemical properties that can be utilized for novel nanoelectronics and optoelectronics devices. The performance of these electronic devices strongly depends on the quality and defect morphology of the MoS2 layers. Yet, little is known about the atomic structure of defects present in monolayer MoS2 and their influences on the material properties. Here we provide a systematic study of various intrinsic structural defects, including point defects, grain boundaries, and edges, in chemical vapor phase grown monolayer MoS2 via direct atomic resolution imaging, and explore their energy landscape and electronic properties using first-principles calculations. We discover that one-dimensional metallic wires can be created via two different types of 60 grain boundaries consisting of distinct 4-fold ring chains. A new type of edge reconstruction, representing a transition state during growth, was also identified, providing insights into the material growth mechanism. The atomic scale study of structural defects presented here brings new opportunities to tailor the properties of MoS2 via controlled synthesis and defect engineering.

Zhou, Wu [ORNL; Idrobo Tapia, Juan C [ORNL

2013-01-01T23:59:59.000Z

197

Line detection -The masks shown below can be used to detect lines at various orientations  

E-Print Network [OSTI]

every mask over the image and we combine the responses: R(x, y) = max(|R1(x, y)|, |R2(x, y)|, |R3(x, y)|, |R4(x, y)|) If R(x, y) > T, then discontinuity -1 -1 -1 -1 -1 -1 -1-1 -1 -1 -1 -1 2 -1 -1 -1 -1 2 -1 -1 -1222 2 -1 -1-12 2 -1 2 2 2 2 -1 Original Image R1 R2 R3 R4 Convolved Image with R1 Convolved

Masci, Frank

198

Patterned graphene functionalization via mask-free scanning of micro-plasma jet under ambient condition  

SciTech Connect (OSTI)

In this work, a mask-free method is introduced for patterned nitrogen doping of graphene using a micro-plasma jet under ambient condition. Raman and X-ray photoelectron spectroscopy spectra indicate that nitrogen atoms are incorporated into the graphene lattice with the two-dimensional spatial distribution precisely controlled in the range of mm down to 10??m. Since the chemistry of the micro-plasma jet can be controlled by the choice of the gas mixture, this direct writing process with micro-plasma jet can be a versatile approach for patterned functionalization of graphene with high spatial resolution. This could have promising applications in graphene-based electronics.

Ye, Dong; Yu, Yao, E-mail: ensiyu@mail.hust.edu.cn; Liu, Lin [School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074 Wuhan (China)] [School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074 Wuhan (China); Wu, Shu-Qun; Lu, Xin-Pei [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, 430074 Wuhan (China)] [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, 430074 Wuhan (China); Wu, Yue [Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3255 (United States)] [Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3255 (United States)

2014-03-10T23:59:59.000Z

199

Characterization of an expanded-field Schwarzschild objective for extreme ultraviolet lithography  

SciTech Connect (OSTI)

The performance of a new 10x-reduction Schwarzschild system for projection imaging at 13.4 nm wavelength is reported. The optical design is optimized to achieve 0.1 {mu}m resolution over a 0.4 mm image field of view, an increase in area of a factor of 100 over previous designs. An off-set aperture, located on the convex primary, defines an unobscured 0.08 numerical aperture. The system is illuminated using extreme ultraviolet (EUV) radiation emitted from a laser plasma source and collected by an ellipsoidal condenser. A 450 turning mirror is used to relay the collected EUV radiation onto a near-normal reflecting mask. Multiple sets of primary and secondary elements were fabricated, matched and clocked to minimize the effects of small figure errors on imaging performance. Optical metrology indicates that the wave-front error within the subaperture used is within a factor of two of the design value. Images recorded in PMMA and ZEP 520 resists reveal good imaging fidelity over much of the 0.4 mm field with equal line/space gratings being resolved to 0.1 {mu}m.

Kubiak, G.D.; Tichenor, D.A.; Ray-Chaudhuri, A.K. [and others

1994-08-01T23:59:59.000Z

200

Characterization of an expanded?field Schwarzschild objective for extreme ultraviolet lithography  

Science Journals Connector (OSTI)

The performance of a new 10×?reduction Schwarzschild system for projection imaging at 13.4 nm wavelength is reported. The optical design is optimized to achieve 0.1 ?m resolution over a 0.4 mm image field of view an increase in area of a factor of 100 over previous designs. An offset aperture located on the convex primary defines an unobscured 0.08 numerical aperture. The system is illuminated using extreme ultraviolet(EUV)radiation emitted from a laser plasma source and collected by an ellipsoidal condenser. A 45° turning mirror is used to relay the collected EUVradiation onto a near?normal reflecting mask. Multiple sets of primary and secondary elements were fabricated matched and clocked to minimize the effects of small figure errors on imaging performance. Optical metrology indicates that the wave?front error within the subaperture used is within a factor of 2 of the design value. Images recorded in poly(methyl methacrylate) and ZEP 520 (Nippon Zeon) resists reveal good imaging fidelity over much of the 0.4 mm field with equal line/space gratings being resolved to 0.1 ?m.

G. D. Kubiak; D. A. Tichenor; A. K. Ray?Chaudhuri; M. E. Malinowski; R. H. Stulen; S. J. Haney; K. W. Berger; R. P. Nissen; G. A. Wilkerson; P. H. Paul; J. E. Bjorkholm; L. A. Fetter; R. R. Freeman; M. D. Himel; A. A. MacDowell; D. M. Tennant; O. R. Wood II; W. K. Waskiewicz; D. L. White; D. L. Windt; T. E. Jewell

1994-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Characterization of an expanded-field Schwarzschild objective for extreme ultraviolet lithography  

SciTech Connect (OSTI)

The performance of a new 10[times]-reduction Schwarzschild system for projection imaging at 13.4 nm wavelength is reported. The optical design is optimized to achieve 0.1 [mu]m resolution over a 0.4 mm image field of view, an increase in area of a factor of 100 over previous designs. An offset aperture, located on the convex primary, defines an unobscured 0.08 numerical aperture. The system is illuminated using extreme ultraviolet (EUV) radiation emitted from a laser plasma source and collected by an ellipsoidal condenser. A 45[degree] turning mirror is used to relay the collected EUV radiation onto a near-normal reflecting mask. Multiple sets of primary and secondary elements were fabricated, matched, and clocked to minimize the effects of small figure errors on imaging performance. Optical metrology indicates that the wave-front error within the subaperture used is within a factor of 2 of the design value. Images recorded in poly(methyl methacrylate) and ZEP 520 (Nippon Zeon) resists reveal good imaging fidelity over much of the 0.4 mm field with equal line/space gratings being resolved to 0.1 [mu]m.

Kubiak, G.D.; Tichenor, D.A.; Ray-Chaudhuri, A.K.; Malinowski, M.E.; Stulen, R.H.; Haney, S.J.; Berger, K.W.; Nissen, R.P.; Wilkerson, G.A.; Paul, P.H. (Sandia National Laboratories, Livermore, California 94551-0969 (United States)); Bjorkholm, J.E.; Fetter, L.A.; Freeman, R.R.; Himel, M.D.; MacDowell, A.A.; Tennant, D.M.; Wood, O.R. II (AT T Bell Laboratories, Holmdel, New Jersey 07733-3030 (United States)); Waskiewicz, W.K.; White, D.L.; Windt, D.L. (AT T Bell Laboratories, Murray Hill, New Jersey 07974-2070 (United States)); Jewell, T.E. (Optical Engineering Consultant, Boulder, Colorado 80304 (United States))

1994-11-01T23:59:59.000Z

202

Quantum States of Light Produced by a High-Gain Optical Parametric Amplifier for Use in Quantum Lithography  

E-Print Network [OSTI]

We present a theoretical analysis of the properties of an unseeded optical parametic amplifier (OPA) used as the source of entangled photons for applications in quantum lithography. We first study the dependence of the excitation rate of a two-photon absorber on the intensity of the light leaving the OPA. We find that the rate depends linearly on intensity only for output beams so weak that they contain fewer than one photon per mode. We also study the use of an N-photon absorber for arbitrary N as the recording medium to be used with such a light source. We find that the contrast of the interference pattern and the sharpness of the fringe maxima tend to increase with increasing values of N, but that the density of fringes and thus the limiting resolution does not increase with N. We conclude that the output of an unseeded OPA exciting an N-photon absorber provides an attractive system in which to perform quantum lithography.

Girish S. Agarwal; Kam Wai Chan; Robert W. Boyd; Hugo Cable; Jonathan P. Dowling

2006-08-22T23:59:59.000Z

203

The role of reverberation in release from masking due to spatial separation of sources in speech recognition  

Science Journals Connector (OSTI)

Arbogast et al. [ARO Mtg. (2002)] found a large release from masking obtained by spatial separation of a target talker and competing speech masker. Both stimuli were sentences from the Coordinate Response Measure corpus [Bolia et al. J. Acoust. Soc. Am. (2000)] processed by extracting the envelopes of 15 narrow frequency bands and using the envelopes to modulate carrier tones at the center of each band. By playing nonoverlapping subsets (6–8) of bands from signal and masker they minimized the energetic component while maximizing the informational component of masking. This study extends that work to determine the interaction between reverberation masker type and spatial release from masking. Stimuli were processed and presented as above. The target sentence was played at 0?deg azimuth while the masker sentence was played at 0 or 90?deg azimuth. Noise–masker controls were also tested. The listening environment was an IAC booth having dimensions of 12 ft×13 ft. Acoustic extremes were achieved using PlexiglasTM (highly reflective) or foam (highly absorptive). The results indicated that the amount of masking and the spatial release from masking depend both on the characteristics of the room and masker type. Discussion will center on the acoustic and perceptual factors affecting performance. [Work supported by NIH/NIDCD.

2002-01-01T23:59:59.000Z

204

Influence of defects on thermal and mechanical properties of metals  

E-Print Network [OSTI]

of theories of melting with respect to defects. We studied the melting and freezing process for a model system of copper with and without defects. We studied point defects (1, 2, 4, 8 vacancies and 1, 2, 4, 8 interstitials), line defects (edge dislocation...

Kamani, Sandeep Kumar

2009-05-15T23:59:59.000Z

205

Simulation of localized barrier defects in resonant tunneling diodes  

E-Print Network [OSTI]

. . . . 30 14 PVCR versus left energy and position for right defect atxt = 2152 A and Et =-0. 1 eV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 15 16 17 PVCR versus left defect position and energy for the right defect at xt... = 2152 A and Et = 0. 15 eV. . . . . . . . PVCR versus left defect position and energy for the right defect at xt = 2142 A and Et = 0. 15 eV. . . . . . . PVCR versus left defect position and energy for the right defect at x I = 2122 A and Et = 0 e...

Stoneberg, Jason Neal

1995-01-01T23:59:59.000Z

206

The Effect of Obstacles Close to the Anemometer Mask located on a Building  

Open Energy Info (EERE)

The Effect of Obstacles Close to the Anemometer Mask located on a Building The Effect of Obstacles Close to the Anemometer Mask located on a Building on Wind Flow in the WAsP Model Dataset Summary Description (Abstract): Wind Atlas Analysis and Application Program (WAsP) is a powerful software package which is used for wind energy assessment for any location using the data of a nearby location under the same climatic condition. In this work WAsP has been used to predict potential areas of Kutubdia, an Island of Bangladesh, for installation of wind generators. As the mast is on the roof of Bangladesh Meteorological Department (BMD) station the hill effect has been introduced. If full heights of obstacles are used the predicted speed for another location becomes high and therefore the height parameter of the obstacles has been adjusted. It appears that those with height below or equal to the slope should not be considered and an obstacle with height greater then the slope should be taken as around h/2 where h is the height above the slope towards the wind direction. The computation shows that the speed difference for one year period between the measured and predicted annual values is 0.3m/s.

207

I n s i t u thermal oxidation for surface cleaning and mask generation prior to selective area epitaxy  

Science Journals Connector (OSTI)

Dry thermal oxidation of GaAs and AlAs has been carried out in an organometallic chemical vapor deposition system. This i n s i t u process performed either before or after an epitaxialgrowth serves the purposes of surface cleaning and mask generation for selective area epitaxy of various III?V semiconductors.AlAsoxidized immediately after growth and patterned for the next regrowth provides better oxide?semiconductor interfaces and minimizes wafer handling. Pre?epitaxy oxidation at 435?°C on a patterned wafer with AlAs/GaAs areas resulted in a selective oxide mask. Since thermal oxides of GaAssublime at temperatures >600?°C a 700?°C pregrowth annealing thus thermally cleans the oxidizedGaAs areas while the oxides of AlAs remain as a mask for the following regrowth. Photoluminescence results indicate that high quality regrown interfaces have been obtained.

Stephen H. Jones; Kei May Lau

1988-01-01T23:59:59.000Z

208

Symmetry, Defects, and Gauging of Topological Phases  

E-Print Network [OSTI]

We examine the interplay of symmetry and topological order in $2+1$ dimensional topological phases of matter. We present a definition of the \\it topological symmetry \\rm group, which characterizes the symmetry of the emergent topological quantum numbers of a topological phase $\\mathcal{C}$, and describe its relation with the microscopic symmetry of the underlying physical system. We derive a general framework to classify symmetry fractionalization in topological phases, including non-Abelian phases and the possibility that the symmetries permute the quasiparticle types. We develop a theory of extrinsic defects (fluxes) associated with elements of the symmetry group, which provides a general classification of symmetry-enriched topological phases derived from a topological phase of matter $\\mathcal{C}$ with (on-site) symmetry group $G$. The algebraic theory of the defects, known as a $G$-crossed braided tensory category $\\mathcal{C}_{G}^{\\times}$, allows one to compute many properties, such as the number of topologically distinct types of defects associated with each group element, their fusion rules, quantum dimensions, zero modes, braiding exchange transformations, a generalized Verlinde formula for the defects, and modular transformations of the $G$-crossed extensions of topological phases. We also examine the promotion of the global symmetry to a local gauge invariance, wherein the extrinsic $G$-defects are turned into deconfined quasiparticle excitations, which results in a different topological phase $\\mathcal{C}/G$. A number of instructive and/or physically relevant examples are studied in detail.

Maissam Barkeshli; Parsa Bonderson; Meng Cheng; Zhenghan Wang

2014-10-16T23:59:59.000Z

209

Bonding defects in hydrogenated amorphous silicon  

SciTech Connect (OSTI)

A mechanism for charged-carrier-trapping-induced defect metastability in hydrogenated amorphous silicon (a-Si:H) and in hydrogenated amorphous silicon alloys containing relatively high concentrations of oxygen and/or nitrogen atoms (a-Si:X:H, X = O or N) is described. The experimental results that identified this defect metastability mechanism were (i) differences in the Staebler-Wronski effect in a-Si:H and a-Si:N:H alloys prepared from N{sub 2} and NH{sub 3} source gases by remote plasma-enhanced chemical-vapor deposition, and (ii) differences in defect generation at N-atom terminated Si-SiO{sub 2} interfaces prepared from NH{sub 3} and N{sub 2}O.

Lucovsky, G.; Yang, H. [North Carolina State Univ., Raleigh, NC (United States)

1996-12-31T23:59:59.000Z

210

The effects of fastener hole defects  

E-Print Network [OSTI]

) August 1991 ABSTRACT The Effects of Fastener Hole Defects. (August 1991) Scot D. Andrews, B. S. , Texas A8rM University Chair of Advisory Committee: Dr. Orden O. Ochoa The influence of drilling-induced defects, such as delamination, on the fatigue... Of Delaminated Zone Elements . . Figure 34. Enlarged View Of Area Near Hole 58 59 61 Page Figure 35. Example Finite Element Mesh Figure 36. Selected Elements For Stress Distribution Graphs . . Figure 37. Example Of o? Stress Distribution For 18 Ply Tape...

Andrews, Scot D.

2012-06-07T23:59:59.000Z

211

A NEW ALGORITHM FOR RADIOISOTOPE IDENTIFICATION OF SHIELDED AND MASKED SNM/RDD MATERIALS  

SciTech Connect (OSTI)

Detection and identification of shielded and masked nuclear materials is crucial to national security, but vast borders and high volumes of traffic impose stringent requirements for practical detection systems. Such tools must be be mobile, and hence low power, provide a low false alarm rate, and be sufficiently robust to be operable by non-technical personnel. Currently fielded systems have not achieved all of these requirements simultaneously. Transport modeling such as that done in GADRAS is able to predict observed spectra to a high degree of fidelity; our research is focusing on a radionuclide identification algorithm that inverts this modeling within the constraints imposed by a handheld device. Key components of this work include incorporation of uncertainty as a function of both the background radiation estimate and the hypothesized sources, dimensionality reduction, and nonnegative matrix factorization. We have partially evaluated performance of our algorithm on a third-party data collection made with two different sodium iodide detection devices. Initial results indicate, with caveats, that our algorithm performs as good as or better than the on-board identification algorithms. The system developed was based on a probabilistic approach with an improved approach to variance modeling relative to past work. This system was chosen based on technical innovation and system performance over algorithms developed at two competing research institutions. One key outcome of this probabilistic approach was the development of an intuitive measure of confidence which was indeed useful enough that a classification algorithm was developed based around alarming on high confidence targets. This paper will present and discuss results of this novel approach to accurately identifying shielded or masked radioisotopes with radiation detection systems.

Jeffcoat, R.

2012-06-05T23:59:59.000Z

212

Coulomb screening in graphene with topological defects  

E-Print Network [OSTI]

We analyze the screening of an external Coulomb charge in gapless graphene cone, which is taken as a prototype of a topological defect. In the subcritical regime, the induced charge is calculated using both the Green's function and the Friedel sum rule. The dependence of the polarization charge on the Coulomb strength obtained from the Green's function clearly shows the effect of the conical defect and indicates that the critical charge itself depends on the sample topology. Similar analysis using the Friedel sum rule indicates that the two results agree for low values of the Coulomb charge but differ for the higher strengths, especially in the presence of the conical defect. For a given subcritical charge, the transport cross-section has a higher value in the presence of the conical defect. In the supercritical regime we show that the coefficient of the power law tail of polarization charge density can be expressed as a summation of functions which vary log periodically with the distance from the Coulomb imp...

Chakraborty, Baishali; Sen, Siddhartha

2015-01-01T23:59:59.000Z

213

Defect analysis using resonant ultrasound spectroscopy  

E-Print Network [OSTI]

) ......................................................................... 62 Figure 4.5 FEA models of (a) Y Bend 1, (b) X Torsion 1, and (c) Z Bend 1 ......................................................................................... 64 Figure 4.6 Change in frequency vs. defect depth for mode Y Bend 1...................................................................................................... ix LIST OF TABLES .................................................................................................... xiii 1. INTRODUCTION............................................................................................... 1 1.1...

Flynn, Kevin Joseph

2009-05-15T23:59:59.000Z

214

Defect Tolerant Semiconductors for Solar Energy Conversion  

Science Journals Connector (OSTI)

Defect Tolerant Semiconductors for Solar Energy Conversion ... He obtained his Ph.D. in Physics at Paris-Sud University where he modeled Hot Carrier Solar Cells by means of Ensemble Monte Carlo methods. ... These surface energies are significantly lower compared to 96 and 102 meV/Ĺ2 for (1010) and (1120) low energy nonpolar GaN surfaces respectively. ...

Andriy Zakutayev; Christopher M. Caskey; Angela N. Fioretti; David S. Ginley; Julien Vidal; Vladan Stevanovic; Eric Tea; Stephan Lany

2014-03-13T23:59:59.000Z

215

Defect Characterization for Scaling of QCA Devices  

E-Print Network [OSTI]

operation and ultra low power dissipation [8]. Among these new devices, quantum dot cellular automata (QCA promising new computing scheme in the nano-scale regimes. As an emerging technology, QCA relies on radically voter, the inverter and the binary wire, are provided to show that defects have definitive trends

216

A magnetotelluric survey on Manitoulin Island and Bruce Peninsula along GLIMPCE seismic line J: black shales mask the Grenville Front  

Science Journals Connector (OSTI)

......Geological Survey, 1985. Oil shale assessment project drillholes...GLIMPCE seismic line J: black shales mask the Grenville Front M...highly conductive layer of black shales of limited extent, precludes...y believed to be caused by anisotropic effects associated with thick......

M. Mareschal; R. D. Kurtz; M. Chouteau; R. Chakridi

1991-04-01T23:59:59.000Z

217

Wavelength Invariant Bi/In Thermal Resist As A Si Anisotropic Etch Masking Layer And Direct Write Photomask Material  

E-Print Network [OSTI]

which form an etch resistant material at ~7 mJ/cm2 laser exposures with near wavelength invariance fromWavelength Invariant Bi/In Thermal Resist As A Si Anisotropic Etch Masking Layer And Direct Write Photomask Material Glenn Chapman1 , Yuqiang Tu and Jun Peng School of Engineering Science, Simon Fraser

Chapman, Glenn H.

218

Fast Yield-Driven Fracture for Variable Shaped-Beam Mask Andrew B. Kahng, Xu Xu and Alex Zelikovsky  

E-Print Network [OSTI]

Fast Yield-Driven Fracture for Variable Shaped-Beam Mask Writing Andrew B. Kahng, Xu Xu and Alex process generation have collectively presented new challenges for current fracture tools, which-dimension errors. Some commercial tools are available for handling the sliver minimization problem in fracture

Zelikovsky, Alexander

219

Atomic-Level Computer Simulation of SiC: Defect Accumulation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Atomic-Level Computer Simulation of SiC: Defect Accumulation, Mechanical Properties and Defect Recovery. Atomic-Level Computer Simulation of SiC: Defect Accumulation, Mechanical...

220

Buckling and Topological Defects in Graphene and Carbon Nanotubes  

E-Print Network [OSTI]

defect formation energy in carbon nanotubes and graphene”.Carbon Nanotubes strain e zz Defect Formation Energies fromCARBON NANOTUBES Figure 4.3: Contour plots of strain energy

Chen, Shuo

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Estimating the expected latency to failure due to manufacturing defects  

E-Print Network [OSTI]

Manufacturers of digital circuits test their products to find defective parts so they are not sold to customers. Despite extensive testing, some of their products that are defective pass the testing process. To combat this problem, manufacturers...

Dorsey, David Michael

2004-09-30T23:59:59.000Z

222

Defect site prediction based upon statistical analysis of fault signatures  

E-Print Network [OSTI]

Good failure analysis is the ability to determine the site of a circuit defect quickly and accurately. We propose a method for defect site prediction that is based on a site's probability of excitation, making no assumptions about the type...

Trinka, Michael Robert

2004-09-30T23:59:59.000Z

223

THE DEFECT STRUCTURE OF CdTe (*) F. A. KRGER  

E-Print Network [OSTI]

THE DEFECT STRUCTURE OF CdTe (*) F. A. KR�GER David Packard Professor of Electrical Engineering haute résistivité. Abstract. 2014 Evidence concerning the defect structure of CdTe is reviewed

Paris-Sud XI, Université de

224

Modeling of virtual standards of vibration of defective bearing units  

Science Journals Connector (OSTI)

Results of studies designed to model vibration signals are presented below. A sample of time signals obtained as a result of cranking defective and defect-free bearings of railway freight cars on a test bench ser...

V. Yu. Tetter; E. N. Sidorov; E. A. Sidorova

2013-06-01T23:59:59.000Z

225

Defect- and Strain-enhanced Cavity Formation and Au Precipitation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Defect- and Strain-enhanced Cavity Formation and Au Precipitation at nano-crystalline ZrO2SiO2Si Interfaces . Defect- and Strain-enhanced Cavity Formation and Au Precipitation at...

226

Photoconductivity Studies of Defects in p-Type Silicon: Boron Interstitial and Aluminum Interstitial Defects  

Science Journals Connector (OSTI)

Two defects introduced in p-type silicon by 1.5-MeV electron irradiation are studied by means of infrared photoconductivity, including the measurement of the stress-induced dichroism. They are identified as being dopant atoms in interstitial positions produced by the silicon interstitial-impurity atom replacement mechanism proposed by Watkins. They are introduced by room-temperature irradiations as well as by irradiations performed at 77, 20.4, and 4.2°K. They disappear during annealing at temperatures ?250-300°C. The symmetry of these defects C3v is deduced from the low-temperature stress-induced dichroism of the photoconductivity which is associated with electronic reorientation among different configurations. This C3v symmetry can be explained by distortion of a possible Jahn-Teller type of a configuration in which the dopant atom was originally in a tetrahedral position. The defect response to the stress is determined by the value of the term in the piezospectroscopic defect tensor which characterizes the relative change in defect energy per unit strain. This value is ? -12 eV/(unit strain). Numerical values of the dichroic ratios show that the photoconductivity transition which is observed corresponds to a distribution of dipole moments which is an ellipsoid of rotation about the trigonal axis of the defect. They also allow the determination of this distribution.

M. Cherki and A. H. Kalma

1970-01-15T23:59:59.000Z

227

Imaging Vertically Oriented Defects with Multi-Saft  

Science Journals Connector (OSTI)

Imaging vertically oriented defects using the Synthetic Aperture Focusing Technique (SAFT) requires special consideration. When the faces...

M. Lorenz; U. Stelwagen; A. J. Berkhout

1991-01-01T23:59:59.000Z

228

A new pathway in the generation of defective retrovirus DNA.  

Science Journals Connector (OSTI)

...pathway in the generation of defective retrovirus DNA. J C Olsen...suggest that in the formation of defective circular DNA, the U5 domain...II I I I I , I I Il I I 1. DEFECTIVE RETROVIRUS DNA 783 deletions...Nucleotide sequence analysis was car- ried out on the relevant...

J C Olsen; R Swanstrom

1985-12-01T23:59:59.000Z

229

Defective Interfering Particles of Poliovirus IV. Mechanisms of Enrichment  

Science Journals Connector (OSTI)

...virus. 1424 J. VIROL. 3 DEFECTIVE INTERFERING PARTICLES OF POLIOVIRUS...experiments were originally car- ried out in an attempt to...input ratio of standard to defective particles as measured by the...and D. Baltimore. 1973. Defective interfering particles of poliovirus...

Charles N. Cole; David Baltimore

1973-12-01T23:59:59.000Z

230

Counting Defective Parking Functions Peter J Cameron, Daniel Johannsen,  

E-Print Network [OSTI]

the corresponding assignments a defective parking function of defect k. Suppose that m cars attempt to parkCounting Defective Parking Functions Peter J Cameron, Daniel Johannsen, Thomas Prellberg, Pascal a preferred parking space in a linear car park with n spaces. Each driver goes to the chosen space and parks

231

Defective Interfering Particles of Poliovirus I. Isolation and Physical Properties  

Science Journals Connector (OSTI)

...gel, and electrophoresis was car- ried out at 5 ma/gel for...anode is at the right. POLIO DEFECTIVE PARTICLES TABLE 1. Annealing of unlabeled standard and defective intferfering [DI(I)] ribonucleic...formed by replication of the defective RNA by a mechanism similar...

Charles N. Cole; Donna Smoler; Eckard Wimmer; David Baltimore

1971-04-01T23:59:59.000Z

232

Survey Reproduction of Defect Reporting in Industrial Software Development  

Science Journals Connector (OSTI)

Context: Defect reporting is an important part of software development in-vivo, but previous work from open source context suggests that defect reports often have insufficient information for defect fixing. Objective: Our goal was to reproduce and partially ... Keywords: software debugging, software maintenance, software quality

Eero I. Laukkanen; Mika V. Mantyla

2011-09-01T23:59:59.000Z

233

Developing criteria for identifying acoustical defects  

Science Journals Connector (OSTI)

In a construction defect lawsuit of a multifamily residential project the determination of whether a defect exists often hinges on the criteria applied. For many acoustical items such as plumbing and HVAC noise there are no code requirements but a number of guidelines and recommendations. For items such as noise from traffic or airborne and impact sound isolation between units minimum code requirements exist but often a more stringent standard is applied. How does an expert decide when it is appropriate to apply an acoustical standard that is beyond that required by building codes? Project drawings marketing materials homeowner regulations and other documents can provide indications of the intent and promise of the project as it relates to acoustical issues. The process is discussed with examples from recent cases.

John LoVerde; David W. Dong

2013-01-01T23:59:59.000Z

234

Metastable light induced defects in pentacene  

SciTech Connect (OSTI)

In this study we analyzed one of the environmental factors that could affect organic materials. Pentacene thin film samples were fabricated and the degradation of their electrical characteristics was measured when the devices were exposed to ultraviolet light irradiation. The results have been reported in terms of a trap density model, which provides a description of the dynamics of light induced electrically active defects in an organic semiconductor.

Liguori, R.; Aprano, S.; Rubino, A. [Department of Industrial Engineering (DIIn), University of Salerno, via Giovanni Paolo II, 132, 84084 Fisciano (Italy)

2014-02-21T23:59:59.000Z

235

ALSNews Vol. 311  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1 Print 1 Print Irradiation Effects on Human Cortical Bone Fracture Behavior The role irradiation plays in high-exposure bone fracturing experiments, and how it affects the properties of bone tissue, are not fully understood. To better predict fracturing in bone, researchers must understand the role of sustained irradiation damage at different size scales within bone. Using synchrotron radiation microtomography at ALS Beamline 8.3.2, researchers investigated changes in crack path and toughening mechanisms in human cortical bone with increased exposure to radiation, finding that this can lead to drastic losses in strength, ductility, and toughness. Read more... Contact: Robert O. Ritchie Investigating Extreme Ultraviolet Lithography Mask Defects Printing computer chips using extreme ultraviolet (EUV) lithography will enable the production of smaller, faster, and cheaper semiconductors. EUV lithography relies on specialized, curved-mirror lenses to print patterns with high resolution. One special flat mirror called a mask is particularly sensitive to even the smallest imperfections. To better detect and characterize mask defects, Berkeley Lab scientists worked with an international semiconductor industry consortium to create a unique Fresnel zoneplate microscope on ALS Beamline 11.3.2: The SEMATECH Berkeley Actinic Inspection Tool (AIT). Read more...

236

ALSNews Vol. 311  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1 Print 1 Print Irradiation Effects on Human Cortical Bone Fracture Behavior The role irradiation plays in high-exposure bone fracturing experiments, and how it affects the properties of bone tissue, are not fully understood. To better predict fracturing in bone, researchers must understand the role of sustained irradiation damage at different size scales within bone. Using synchrotron radiation microtomography at ALS Beamline 8.3.2, researchers investigated changes in crack path and toughening mechanisms in human cortical bone with increased exposure to radiation, finding that this can lead to drastic losses in strength, ductility, and toughness. Read more... Contact: Robert O. Ritchie Investigating Extreme Ultraviolet Lithography Mask Defects Printing computer chips using extreme ultraviolet (EUV) lithography will enable the production of smaller, faster, and cheaper semiconductors. EUV lithography relies on specialized, curved-mirror lenses to print patterns with high resolution. One special flat mirror called a mask is particularly sensitive to even the smallest imperfections. To better detect and characterize mask defects, Berkeley Lab scientists worked with an international semiconductor industry consortium to create a unique Fresnel zoneplate microscope on ALS Beamline 11.3.2: The SEMATECH Berkeley Actinic Inspection Tool (AIT). Read more...

237

The role of point defects and defect complexes in silicon device processing. Summary report and papers  

SciTech Connect (OSTI)

This report is a summary of a workshop hold on August 24--26, 1992. Session 1 of the conference discussed characteristics of various commercial photovoltaic silicon substrates, the nature of impurities and defects in them, and how they are related to the material growth. Session 2 on point defects reviewed the capabilities of theoretical approaches to determine equilibrium structure of defects in the silicon lattice arising from transitional metal impurities and hydrogen. Session 3 was devoted to a discussion of the surface photovoltaic method for characterizing bulk wafer lifetimes, and to detailed studies on the effectiveness of various gettering operations on reducing the deleterious effects of transition metals. Papers presented at the conference are also included in this summary report.

Sopori, B.; Tan, T.Y.

1994-08-01T23:59:59.000Z

238

Improved repeat identification and masking in Dipterans Christopher D. Smith1,2,,*, Robert C. Edgar3,, Mark D. Yandell4, Douglas R. Smith5, Susan  

E-Print Network [OSTI]

Improved repeat identification and masking in Dipterans Christopher D. Smith1,2,,*, Robert C. Edgar3,, Mark D. Yandell4, Douglas R. Smith5, Susan E. Celniker2, Eugene W. Myers6,7, and Gary H. Karpen2

Yandell, Mark

239

The Effects of Oxygen Plasma on the Chemical Composition and Morphology of the Ru Capping Layer of the Extreme Ultraviolet (EUV) Mask Blanks  

E-Print Network [OSTI]

P-5B-03 The effects of oxygen plasma on the chemicalRu) mask surface after oxygen plasma treatment using surfacein the subsurface oxygen concentration, Ru oxidation and

Belau, Leonid

2009-01-01T23:59:59.000Z

240

Tuning extreme ultraviolet emission for optimum coupling with multilayer mirrors for future lithography through control of ionic charge states  

SciTech Connect (OSTI)

We report on the identification of the optimum plasma conditions for a laser-produced plasma source for efficient coupling with multilayer mirrors at 6.x nm for beyond extreme ultraviolet lithography. A small shift to lower energies of the peak emission for Nd:YAG laser-produced gadolinium plasmas was observed with increasing laser power density. Charge-defined emission spectra were observed in electron beam ion trap (EBIT) studies and the charge states responsible identified by use of the flexible atomic code (FAC). The EBIT spectra displayed a larger systematic shift of the peak wavelength of intense emission at 6.x nm to longer wavelengths with increasing ionic charge. This combination of spectra enabled the key ion stage to be confirmed as Gd{sup 18+}, over a range of laser power densities, with contributions from Gd{sup 17+} and Gd{sup 19+} responsible for the slight shift to longer wavelengths in the laser-plasma spectra. The FAC calculation also identified the origin of observed out-of-band emission and the charge states responsible.

Ohashi, Hayato, E-mail: ohashi@cc.utsunomiya-u.ac.jp; Higashiguchi, Takeshi, E-mail: higashi@cc.utsunomiya-u.ac.jp; Suzuki, Yuhei; Kawasaki, Masato [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Li, Bowen; Dunne, Padraig; O'Sullivan, Gerry [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Kanehara, Tatsuhiko; Aida, Yuya; Nakamura, Nobuyuki [Institute for Laser Science, The University of Electro-Communications, Chofu, Tokyo 182-8585 (Japan); Torii, Shuichi; Makimura, Tetsuya [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Jiang, Weihua [Department of Electrical Engineering, Nagaoka University of Technology, Kami-tomiokamachi 1603-1, Nagaoka, Niigata 940-2188 (Japan)

2014-01-21T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Optimization of extreme ultraviolet photons emission and collection in mass-limited laser produced plasmas for lithography application  

SciTech Connect (OSTI)

The progress in development of commercial system for next generation EUV lithography requires, among other factors, significant improvement in EUV photon sources such as discharge produced plasma (DPP) and laser produced plasma (LPP) devices. There are still many uncertainties in determining the optimum device since there are many parameters for the suitable and efficient energy source and target configuration and size. Complex devices with trigger lasers in DPP or with pre-pulsing in LPP provide wide area for optimization in regards to conversion efficiency (CE) and components lifetime. We considered in our analysis a promising LPP source configuration using 10-30 {mu}m tin droplet targets, and predicted conditions for the most efficient EUV radiation output and collection as well as calculating photons source location and size. We optimized several parameters of dual-beam lasers and their relationship to target size. We used our HEIGHTS comprehensive and integrated full 3D simulation package to study and optimize LPP processes with various target sizes to maximize the CE of the system.

Sizyuk, T.; Hassanein, A. [Center for Materials under Extreme Environment, School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2012-08-01T23:59:59.000Z

242

Cloud Detection with MODIS, Part I: Improvements in the MODIS Cloud Mask for Collection 5 *Richard A. Frey, Steven A. Ackerman, Yinghui Liu, Kathleen I. Strabala, Hong Zhang,  

E-Print Network [OSTI]

Cloud Detection with MODIS, Part I: Improvements in the MODIS Cloud Mask for Collection 5 *Richard.frey@ssec.wisc.edu August 2007 #12;ABSTRACT Significant improvements have been made to the MODIS cloud mask (MOD35 and MYD35 to the 3.9-12 m and 11-12 m cloud tests. More non-MODIS ancillary input data has been added. Land and sea

Sheridan, Jennifer

243

Chapter Two - Pipeline Defects and Corrective Actions  

Science Journals Connector (OSTI)

Abstract One important part of pipeline integrity management activity encompasses the repair and maintenance of anomalies by the maintenance crew. In addition to the advanced inspection tools, knowledge of pipeline defects and how to conduct both immediate and scheduled repairs is of critical importance. The pipeline industry had used the ASME B31G criteria to evaluate corroded pipe for removal or repair. However, there was a need to establish a new approach. The modified criteria were therefore established with the objective to reduce excess conservatism without creating an unsafe condition.

Ramesh Singh

2014-01-01T23:59:59.000Z

244

Structural phase transitions and topological defects in ion Coulomb crystals  

Science Journals Connector (OSTI)

Abstract We use laser-cooled ion Coulomb crystals in the well-controlled environment of a harmonic radiofrequency ion trap to investigate phase transitions and defect formation. Topological defects in ion Coulomb crystals (kinks) have been recently proposed for studies of nonlinear physics with solitons and as carriers of quantum information. Defects form when a symmetry breaking phase transition is crossed nonadiabatically. For a second order phase transition, the Kibble–Zurek mechanism predicts that the formation of these defects follows a power law scaling in the rate of the transition. We demonstrate a scaling of defect density and describe kink dynamics and stability. We further discuss the implementation of mass defects and electric fields as first steps toward controlled kink preparation and manipulation.

Heather L. Partner; Ramil Nigmatullin; Tobias Burgermeister; Jonas Keller; Karsten Pyka; Martin B. Plenio; Alex Retzker; Wojciech H. Zurek; Adolfo del Campo; Tanja E. Mehlstäubler

2014-01-01T23:59:59.000Z

245

Structural phase transitions and topological defects in ion Coulomb crystals  

E-Print Network [OSTI]

We use laser-cooled ion Coulomb crystals in the well-controlled environment of a harmonic radiofrequency ion trap to investigate phase transitions and defect formation. Topological defects in ion Coulomb crystals (kinks) have been recently proposed for studies of nonlinear physics with solitons and as carriers of quantum information. Defects form when a symmetry breaking phase transition is crossed nonadiabatically. For a second order phase transition, the Kibble-Zurek mechanism predicts that the formation of these defects follows a power law scaling in the rate of the transition. We demonstrate a scaling of defect density and describe kink dynamics and stability. We further discuss the implementation of mass defects and electric fields as first steps toward controlled kink preparation and manipulation.

Heather L. Partner; Ramil Nigmatullin; Tobias Burgermeister; Jonas Keller; Karsten Pyka; Martin B. Plenio; Alex Retzker; Wojciech H. Zurek; Adolfo del Campo; Tanja E. Mehlstäubler

2014-11-19T23:59:59.000Z

246

Physisorption of molecular hydrogen on carbon nanotube with vacant defects  

SciTech Connect (OSTI)

Physisorption of molecular hydrogen on single-walled carbon nanotubes (SWCNTs) is important for its engineering applications and hydrogen energy storage. Using molecular dynamics simulation, we study the physisorption of molecular hydrogen on a SWCNT with a vacant defect, focusing on the effect of the vacant defect size and external parameters such as temperature and pressure. We find that hydrogen can be physisorbed inside a SWCNT through a vacant defect when the defect size is above a threshold. By controlling the size of the defects, we are able to extract hydrogen molecules from a gas mixture and store them inside the SWCNT. We also find that external parameters, such as low temperature and high pressure, enhance the physisorption of hydrogen molecules inside the SWCNT. In addition, the storage efficiency can be improved by introducing more defects, i.e., reducing the number of carbon atoms on the SWCNT.

Sun, Gang; Shen, Huaze; Wang, Enge; Xu, Limei, E-mail: limei.xu@pku.edu.cn [International Center for Quantum Materials and School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Tangpanitanon, Jirawat [University of Cambridge, Cambridge, Cambridgeshire CB2 1TP (United Kingdom); Wen, Bo [International Center for Quantum Materials and School of Physics, Peking University, Beijing 100871 (China); Beijing Computational Science Research Center, Heqing Street, Haidian District, Beijing 100084 (China); Xue, Jianming [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Center for Applied Physics and Technology, Peking University, Beijing 100871 (China)

2014-05-28T23:59:59.000Z

247

AUTOMATED DEFECT CLASSIFICATION USING AN ARTIFICIAL NEURAL NETWORK  

SciTech Connect (OSTI)

The automated defect classification algorithm based on artificial neural network with multilayer backpropagation structure was utilized. The selected features of flaws were used as input data. In order to train the neural network it is necessary to prepare learning data which is representative database of defects. Database preparation requires the following steps: image acquisition and pre-processing, image enhancement, defect detection and feature extraction. The real digital radiographs of welded parts of a ship were used for this purpose.

Chady, T.; Caryk, M. [Szczecin University of Technology, Department of Electrical Engineering (Poland); Piekarczyk, B. [Technic-Control, Szczecin (Poland)

2009-03-03T23:59:59.000Z

248

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

249

SciTech Connect: Thermal Hydraulic Characteristics of Fuel Defects...  

Office of Scientific and Technical Information (OSTI)

VA at www.ntis.gov. Thermal Hydraulic Characteristics of Fuel Defects in Plate Type Nuclear Research Reactors Turbulent flow coupled with heat transfer is investigated for a...

250

Defect Migration and Recombination in Nanoindentation of Silica...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Defect Migration and Recombination in Nanoindentation of Silica Glass Authors: Nomura, K., Chen, Y., Kalia, R.K., Nakano, A., Vashishta, P. Deformation, plasticity, and flow in...

251

Nonradiative coherent carrier captures and defect reaction at deep-level defects via phonon-kick mechanism  

SciTech Connect (OSTI)

We simulated the time evolution of electron-lattice coupling mode, and a series of nonradiative carrier captures by a deep-level defect in a semiconductor. For lattice relaxation energy of the order of the band gap, a series of coherent (athermal) electron and hole captures by a defect is possible for high carrier densities, which results in an inflation in the induced lattice vibration, which in turn enhances a defect reaction.

Wakita, Masaki; Suzuki, Kei; Shinozuka, Yuzo [Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510 (Japan)

2014-02-21T23:59:59.000Z

252

Energetics of Defects on Graphene through Fluorination  

SciTech Connect (OSTI)

In the present study, we used FGS[5] as the substrate and implemented low temperature (<=150 oC) direct fluorination on graphene sheets. The fluorine content has been modulated to investigate the formation mechanism of different functional groups such as C-F, CF2, O-CF2 and (C=O)F during the fluorination process. The detailed structure and chemical bonds were simulated theoretically and quantified experimentally by using density function theory (DFT) calculations and NMR techniques, respectively. The adjustable power/energy ratio from fluorinated graphene as cathode for primary lithium batteries is also discussed. From a combination of NMR spectroscopy and theoretical calculation, we conclude that the topological defects without oxygen containing groups provide most of the reactive sites to react with F. FGS also contain a small number of COOH groups which contribute for the fluorination reaction. Hydroxyl or epoxy groups contribute to another fraction of the reaction products.

Xiao, Jie; Meduri, Praveen; Chen, Honghao; Wang, Zhiguo; Gao, Fei; Hu, Jian Z.; Feng, Ju; Hu, Mary Y.; Dai, Sheng; Brown, Suree; Adcock, Jamie L.; Deng, Zhiqun; Liu, Jun; Graff, Gordon L.; Aksay, Ilhan A.; Zhang, Jiguang

2014-04-01T23:59:59.000Z

253

Science & Technology Review September/October 2008  

SciTech Connect (OSTI)

This issue has the following articles: (1) Answering Scientists Most Audacious Questions--Commentary by Dona Crawford; (2) Testing the Accuracy of the Supernova Yardstick--High-resolution simulations are advancing understanding of Type Ia supernovae to help uncover the mysteries of dark energy; (3) Developing New Drugs and Personalized Medical Treatment--Accelerator mass spectrometry is emerging as an essential tool for assessing the effects of drugs in humans; (4) Triage in a Patch--A painless skin patch and accompanying detector can quickly indicate human exposure to biological pathogens, chemicals, explosives, or radiation; and (5) Smoothing Out Defects for Extreme Ultraviolet Lithography--A process for smoothing mask defects helps move extreme ultraviolet lithography one step closer to creating smaller, more powerful computer chips.

Bearinger, J P

2008-07-21T23:59:59.000Z

254

Quantitative Quality Management through Defect Prediction and Statistical Process Control  

E-Print Network [OSTI]

Quantitative Quality Management through Defect Prediction and Statistical Process Control Pankaj: To produce high quality software, the final software should have as few defects as possible. The task of quality management in a software project is to plan suitable quality control activities, and properly

Jalote, Pankaj

255

Understanding of Defect Physics in Polycrystalline Photovoltaic Materials: Preprint  

SciTech Connect (OSTI)

The performance of thin-film solar cells is influenced by the quality of interfaces and formation of defects such as point defects, stacking faults, twins, dislocations, and grain boundaries. It is important to understand the defect physics so that appropriate methods may be developed to suppress the formation of harmful defects. Here, we review our understanding of defect physics in thin-film photovoltaic (PV) materials such as Si, CdTe, Cu(In,Ga)Se2 (CIGS), Cu2ZnSnSe2 (CZTSe), and Cu2ZnSnS2 (CZTS) using the combination of nanoscale electron microscopy characterization and density-functional theory (DFT). Although these thin-film PV materials share the same basic structural feature - diamond structure based - the defect physics in them could be very different. Some defects, such as stacking faults and special twins, have similar electronic properties in these thin-film materials. However, some other defects, such as grain boundaries and interfaces, have very different electronic properties in these materials. For example, grain boundaries produce harmful deep levels in Si and CdTe, but they do not produce significant deep levels in CIGS, CZTSe, and CZTS. These explain why passivation is critical for Si and CdTe solar cells, but is less important in CIS and CZTS solar cells. We further provide understanding of the effects of interfaces on the performance of solar cells made of these PV materials.

Yan, Y.

2011-07-01T23:59:59.000Z

256

Counting Defective Parking Functions Peter J Cameron, Daniel Johannsen,  

E-Print Network [OSTI]

parking function of defect k. Suppose that m cars attempt to park in a linear car park with n spacesCounting Defective Parking Functions Peter J Cameron, Daniel Johannsen, Thomas Prellberg, Pascal each choose a preferred parking space in a linear car park with n spaces. Each driver goes

Prellberg, Thomas

257

Replication-Defective Vector Based on a Chimpanzee Adenovirus  

Science Journals Connector (OSTI)

...rendered replication defective by deletion of E1 sequences...coxsackievirus and adenovirus (CAR) receptor, such chimeric...fiber proteins. The CAR binding site in the fiber...explanation of the role of CAR in C68 uptake, refer...C68. A replication-defective version of C68 was isolated...

Steven F. Farina; Guang-ping Gao; Z. Q. Xiang; John J. Rux; Roger M. Burnett; Mauricio R. Alvira; Jonathan Marsh; Hildegund C. J. Ertl; James M. Wilson

2001-12-01T23:59:59.000Z

258

Fatigue crack growth testing of sub-clad defects  

SciTech Connect (OSTI)

Fatigue crack growth tests were performed on four-point bend specimens with cracklike defects intentionally placed in A302B low-alloy pressure vessel steel clad with 308/309L weld-deposited stainless steel. The defects were placed in the base metal under the cladding by machining a cavity from the side opposite the cladding, electric-discharge machining a very sharp flaw, fatigue precracking the flaw, and then filling up the cavity by a weld repair process. The specimens were stress relieved before fatigue testing. The specimens were fatigue cycled at positive load ratios until the defects broke through to the surface. The specimens were then fractured at liquid nitrogen temperatures to reveal the fracture surfaces. Seven different sub-clad flaw specimens were tested in room temperature air and each test provides a record of cycles to defect breakthrough. Changes in defect size and shape as a function of applied load cycles were obtained by beach-marking the crack at various stages of the load history. The results provide a set of embedded defect data which can be used for qualifying fatigue crack growth analysis procedures such as those in Section XI of the ASME boiler and Pressure Vessel Code. A comparison between calculated and measured values shows that the ASME B and PV Section XI fatigue crack growth procedures conservatively predict cycles to defect breakthrough for small sub-clad defects.

Jones, D.P.; Leax, T.R. [Bechtel Bettis, Inc., West Mifflin, PA (United States). Bettis Atomic Power Lab.

1999-08-01T23:59:59.000Z

259

Formation of topological defects in first order phase transitions  

Science Journals Connector (OSTI)

We analyze the evolution of scalar and gauge fields during first-order phase transitions and show how the Kibble mechanism for the formation of topological defects emerges from the underlying dynamics, paying particular attention to problems posed by gauge invariance when a local symmetry is spontaneously broken. We discuss also the application of the mechanism to semilocal defects and electroweak strings.

Mark Hindmarsh; Anne-Christine Davis; Robert Brandenberger

1994-02-15T23:59:59.000Z

260

Defect-induced magnetism and transport phenomena in epitaxial oxides  

E-Print Network [OSTI]

that the transition metal dopants (i.e. Mn) have no influence on the ferromagnetic nature of the zinc oxide, but that localised magnetic moments on intrinsic defects are in fact responsible for the ferromagnetic behaviour. A relation between strain (related to defect...

Schoofs, Frank

2012-07-03T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Apple Defect Segmentation by Artificial Neural Networks Devrim Unay a  

E-Print Network [OSTI]

Apple Defect Segmentation by Artificial Neural Networks Devrim Unay a Bernard Gosselin a a TCTS Lab-colored apple fruits performed by several artificial neural networks. Pixel-wise classification approach apple defects. 1 Introduction Quality of apple fruits depends on size, color, shape and presence

Dupont, Stéphane

262

Point Defect Characterization in CdZnTe  

SciTech Connect (OSTI)

Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.

Gul,R.; Li, Z.; Bolotnikov, A.; Keeter, K.; Rodriguez, R.; James, R.

2009-03-24T23:59:59.000Z

263

The spatial evaluation of neighborhood clusters of birth defects  

SciTech Connect (OSTI)

Spatial statistics have recently been applied in epidemiology to evaluate clusters of cancer and birth defects. Their use requires a comparison population, drawn from the population at risk for disease, that may not always be readily available. In this dissertation the plausibility of using data on all birth defects, available from birth defects registries, as a surrogate for the spatial distribution of all live births in the analysis of clusters is assessed. Three spatial statistics that have been applied in epidemiologic investigations of clusters, nearest neighbor distance, average interpoint distance, and average distance to a fixed point, were evaluated by computer simulation for their properties in a unit square, and in a zip code region. Comparison of spatial distributions of live births and birth defects was performed by drawing samples of live births and birth defects from Santa Clara County, determining the street address at birth, geocoding this address and evaluating the resultant maps using various statistical techniques. The proposed method was then demonstrated on a previously confirmed cluster of oral cleft cases. All live births for the neighborhood were geocoded, as were all birth defects. Evaluation of this cluster using the nearest neighbor and average interpoint distance statistics was performed using randomization techniques with both the live births population and the birth defect population as comparison groups. 113 refs., 36 figs., 16 tabs.

Frisch, J.D.

1990-04-16T23:59:59.000Z

264

Diffraction of light by topological defects in liquid crystals  

E-Print Network [OSTI]

We study light scattering by a hedgehog-like and linear disclination topological defects in a nematic liquid crystal by a metric approach. Light propagating near such defects feels an effective metric equivalent to the spatial part of the global monopole and cosmic string geometries. We obtain the scattering amplitude and the differential and total scattering cross section for the case of the hedgehog defect, in terms of the characteristic parameters of the liquid crystal. Studying the disclination case, a cylindrical partial wave method is developed. As an application of the previous developments, we also examine the temperature influence on the localization of the diffraction patterns.

E. Pereira; F. Moraes

2010-11-22T23:59:59.000Z

265

Icosahedral order and defects in metallic liquids and glasses  

Science Journals Connector (OSTI)

Molecular-dynamics simulations of 500 particles have been performed to study the icosahedral order and the defects in the supercooled liquid and glass states of metallic Mg3Ca7. Not only are Frank-Kasper polyhedra and Bernal ‘‘hole’’ polyhedra detected, but also a variety of defective icosahedra. Especially, the number of the type of defective icosahedron defined by eight 1551 bonds, two 1661 bonds, and two 1441 bonds is much greater than the number of any kind of Frank-Kasper and Bernal polyhedra. This strongly supports the physical picture of liquids and glasses being a disordered, entangled array of +72° and -72° disclination lines in an icosahedral medium.

D. W. Qi and S. Wang

1991-07-01T23:59:59.000Z

266

Probing graphene defects and estimating graphene quality with optical microscopy  

SciTech Connect (OSTI)

We report a simple and accurate method for detecting graphene defects that utilizes the mild, dry annealing of graphene/Cu films in air. In contrast to previously reported techniques, our simple approach with optical microscopy can determine the density and degree of dislocation of defects in a graphene film without inducing water-related damage or functionalization. Scanning electron microscopy, confocal Raman and atomic force microscopy, and X-ray photoelectron spectroscopy analysis were performed to demonstrate that our nondestructive approach to characterizing graphene defects with optimized thermal annealing provides rapid and comprehensive determinations of graphene quality.

Lai, Shen [SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 440-746 (Korea, Republic of); Center for Human Interface Nanotechnology (HINT), Suwon 440-746 (Korea, Republic of); Kyu Jang, Sung [SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 440-746 (Korea, Republic of); Jae Song, Young, E-mail: yjsong@skku.edu [SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan University (SKKU), Suwon 440-746 (Korea, Republic of); Lee, Sungjoo, E-mail: leesj@skku.edu [SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 440-746 (Korea, Republic of); Center for Human Interface Nanotechnology (HINT), Suwon 440-746 (Korea, Republic of); College of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746 (Korea, Republic of)

2014-01-27T23:59:59.000Z

267

Modeling of three dimensional defects in integrated circuits  

E-Print Network [OSTI]

Critical regions shown in black for CM F intrusions of cube shaped defect of side 5 p. 52 Critical regions shown in black for CP G protrusions of cube shaped defect of side 5 p. 33 Critical regions shown in black lor shorts between CAA and CMF for a... cube shaped defect of side 4 p. 54 Critical regions shown in black for breaks bctwccn CPG and CMF for a cube shaped del'ect of side 5 p. 35 A layout in three styles (a) Tgm (b) Pla. (c) Std. 36 Sensitivities of CPG-CMI' prism sized shorts for (a...

Dani, Sameer Manohar

2012-06-07T23:59:59.000Z

268

Saturation of light?induced defects in a?Si:H  

Science Journals Connector (OSTI)

The steady?state defect density in hydrogenated amorphous silicon (a?Si:H) under illumination was investigated for a wide range of illumination intensities and temperatures. The saturation defect density under illumination is both temperature and light intensity dependent. A chemical equilibrium model for light?induced defect generation is proposed. According to the model defect generation is enhanced under illumination due to the reduction of the defect formation energy when the bands are populated by photogenerated carriers. Defect generation is a self limiting process and the defect density reaches a saturation value at long illumination time despite the existence of an extended distribution of defect formation sites.

P. V. Santos; W. B. Jackson; R. A. Street

1991-01-01T23:59:59.000Z

269

E-Print Network 3.0 - atomic scale defect Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

assembled DNA nanostructures. Atomic force microscope (AFM) images are used... of defect identification. 4.1 Defect ... Source: Chakrabarty, Krishnendu - Department of Electrical...

270

Modeling and experimental characterization of stepped and v-shaped (311) defects in silicon  

SciTech Connect (OSTI)

We propose an atomistic model to describe extended (311) defects in silicon. It is based on the combination of interstitial and bond defect chains. The model is able to accurately reproduce not only planar (311) defects but also defect structures that show steps, bends, or both. We use molecular dynamics techniques to show that these interstitial and bond defect chains spontaneously transform into extended (311) defects. Simulations are validated by comparing with precise experimental measurements on actual (311) defects. The excellent agreement between the simulated and experimentally derived structures, regarding individual atomic positions and shape of the distinct structural (311) defect units, provides strong evidence for the robustness of the proposed model.

Marqués, Luis A., E-mail: lmarques@ele.uva.es; Aboy, María [Departamento de Electrónica, Universidad de Valladolid, E.T.S.I. de Telecomunicación, 47011 Valladolid (Spain); Dudeck, Karleen J.; Botton, Gianluigi A. [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Knights, Andrew P. [Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Gwilliam, Russell M. [Surrey Ion Beam Centre, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

2014-04-14T23:59:59.000Z

271

E-Print Network 3.0 - automatic defect classification Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

defects and color transition areas of skin... introduced an automatic system to detect patch-like defects on apples by computer vision, where he used... , respectively. It should...

272

E-Print Network 3.0 - active defects induced Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for Multistage Production Systems with Time-Varying Quality Summary: assume that repair of one defect type cannot induce a defect of another type. There are three...

273

Growth of individual carbon nanotubes on an array of TiN/Ni nanodots patterned by e-beam lithography and defined by dry etching for field emission application.  

E-Print Network [OSTI]

: Individual vertically aligned carbon nanotubes, Electron-beam lithography, Dry etching, Field emission and uniform electronic emission, cathodes based on vertically aligned carbon nanotubes (VACNTs) are patternedGrowth of individual carbon nanotubes on an array of TiN/Ni nanodots patterned by e

Boyer, Edmond

274

Defect Analysis of Vehicle Compressed Natural Gas Composite Cylinder  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Defect Analysis of Vehicle Defect Analysis of Vehicle Compressed Natural Gas Composite Cylinder A China Paper on Type 4 Cylinder, translated and presented by J. P. Hsu, PhD, Smart Chemistry Reason for Defect Analysis of CNG Composite Cylinder * Safety Issue - Four explosion accidents of auto used CNG composite material cylinders resulting huge personnel and vehicles loss. * Low Compliance Rate - Inspect 12119 Auto used CNG composite cylinders and only 3868 are qualified with compliance rate of 32%. Plastic CNG Composite Cylinder Process Fitting Internal Plastic Liner External Composite Layer Metal Fitting HDPE Cylinder Liner * HDPE has a high density, great stiffness, good anti-permeability and high melting point, but poor environmental stress cracking Resistance (ESCR). * The defects of cylinder liner quality can be

275

NHTSA's Office of Defects Investigation (ODI) - Technical Service Bulletins  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NHTSA's Office of Defects Investigation (ODI) - Technical Service Bulletins NHTSA's Office of Defects Investigation (ODI) - Technical Service Bulletins System (TSBS) - Downloadable file Manufacturing Data/Tools Research/Tech Services Apps Challenges Blogs Let's Talk Manufacturing You are here Data.gov » Communities » Manufacturing » Data NHTSA's Office of Defects Investigation (ODI) - Technical Service Bulletins System (TSBS) - Downloadable file Dataset Summary Description The Technical Service Bulletins data contains summaries of the Manufacturers' Technical Service Bulletins by single year, make and model. An optional item of Vehicle Component may be also available. (The data does not contain all the service bulletins generated by a manufacturer. Bulletins for safety recalls in general are not included, and also bulletins which may not pertain to a defect may not be included.)

276

The geodesic rule for higher codimensional global defects  

E-Print Network [OSTI]

We generalize the geodesic rule to the case of formation of higher codimensional global defects. Relying on energetic arguments, we argue that, for such defects, the geometric structures of interest are the totally geodesic submanifolds. On the other hand, stochastic arguments lead to a diffusion equation approach, from which the geodesic rule is deduced. It turns out that the most appropriate geometric structure that one should consider is the convex hull of the values of the order parameter on the causal volumes whose collision gives rise to the defect. We explain why these two approaches lead to similar results when calculating the density of global defects by using a theorem of Cheeger and Gromoll. We present a computation of the probability of formation of strings/vortices in the case of a system, such as nematic liquid crystals, whose vacuum is $\\mathbb{R}P^2$.

Anthony J. Creaco; Nikos Kalogeropoulos

2008-05-15T23:59:59.000Z

277

New Composite Silicon-Defect Graphene Anode Architecture  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A New Composite Silicon-Defect Graphene Anode Architecture for High Capacity, High-Rate Li-ion Batteries Xin Zhao, Cary Hayner, Mayfair Kung, and Harold Kung, Northwestern...

278

RIS-M-2478 ELECTRICAL CONDUCTIVITY, DEFECT STRUCTURE AND  

E-Print Network [OSTI]

BACKGROUND 7 THEORY 8 MODEL FOR CALCULATION OF THEORETICAL DENSITY IN THE SYSTEM 10 EXPERIMENTAL 12 sensors, fuel c e l l s and electrolyzers. The defect responsible for the high conductivity

279

Built-In Self Test (BIST) for Realistic Delay Defects  

E-Print Network [OSTI]

Testing of delay defects is necessary in deep submicron (DSM) technologies. High coverage delay tests produced by automatic test pattern generation (ATPG) can be applied during wafer and package tests, but are difficult to apply during the board...

Tamilarasan, Karthik Prabhu

2012-02-14T23:59:59.000Z

280

Effects of Compositional Defects on Small Polaron Hopping in...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(ET) theory were used to model the effects of compositional defects on ET in the brucite-like octahedral sheet of mica. ET was modeled as a FeIIIII valence interchange...

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


281

Defects and impurities in graphene-like materials  

E-Print Network [OSTI]

Graphene-like materials could be used in the fabrication of electronic and optoelectronic devices, gas sensors, biosensors, and batteries for energy storage. Since it is almost impossible to work with defect-free or ...

Terrones, Mauricio

282

Design and optimization of a defect tolerant processor array  

E-Print Network [OSTI]

In this thesis we design and optimization of a defect tolerant MIMD processor array, for maximum performance per wafer area, targeted at applications that have a large number of operations per memory word, is described. The optimization includes...

Lakkapragada, Bhavani S

2012-06-07T23:59:59.000Z

283

COMMUNICATION Escherichia coli tatC Mutations that Suppress Defective  

E-Print Network [OSTI]

COMMUNICATION Escherichia coli tatC Mutations that Suppress Defective Twin-Arginine Transporter@che.utexas.edu. Abbreviations used: Tat, twin-arginine translocation; MBP, maltose-binding protein; GFP, green fluorescence

Georgiou, George

284

Defect passivation using ultrasound treatment: fundamentals and application  

Science Journals Connector (OSTI)

Ultrasonic vibrations introduced into semiconductor thin-films can trigger defect reactions, which are beneficial for electronic materials and devices. This type of semiconductor processing is assigned as ultraso...

S. Ostapenko

1999-08-01T23:59:59.000Z

285

Multi-Saft: A Flexible Method for Defect Characterization  

Science Journals Connector (OSTI)

Another method in development is the synthetic aperture focusing technique (SAFT). SAFT2 is capable of sizing and localization of defects in three dimensions. Furthermore SAFT can be used for classification of th...

Peter Paul van’t Veen; Machteid de Kroon

1996-01-01T23:59:59.000Z

286

Nanoimprint Lithography | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Instrument ID: 34143 Availability: 10 hours a day, 5 days a week Quick Specs Science Contact Science Highlights Publications Custodians Ryan Kelly (509) 371-6525 ryan.kelly...

287

Solvent Immersion Imprint Lithography  

SciTech Connect (OSTI)

The mechanism of polymer disolution was explored for polymer microsystem prototyping, including microfluidics and optofluidics. Polymer films are immersed in a solvent, imprinted and finally brought into contact with a non-modified surface to permanently bond. The underlying polymer-solvent interactions were experimentally and theoretically investigated, and enabled rapid polymer microsystem prototyping. During imprinting, small molecule integration in the molded surfaces was feasible, a principle applied to oxygen sensing. Polystyrene (PS) was employed for microbiological studies at extreme environmental conditions. The thermophile anaerobe Clostridium Thermocellum was grown in PS pore-scale micromodels, revealing a double mean generation lifetime than under ideal culture conditions. Microsystem prototyping through directed polymer dissolution is simple and accessible, while simultaneous patterning, bonding, and surface/volume functionalization are possible in less than one minute.

Vasdekis, Andreas E.; Wilkins, Michael J.; Grate, Jay W.; Kelly, Ryan T.; Konopka, Allan; Xantheas, Sotiris S.; Chang, M. T.

2014-06-21T23:59:59.000Z

288

Graphene materials having randomly distributed two-dimensional structural defects  

SciTech Connect (OSTI)

Graphene-based storage materials for high-power battery applications are provided. The storage materials are composed of vertical stacks of graphene sheets and have reduced resistance for Li ion transport. This reduced resistance is achieved by incorporating a random distribution of structural defects into the stacked graphene sheets, whereby the structural defects facilitate the diffusion of Li ions into the interior of the storage materials.

2013-10-08T23:59:59.000Z

289

Automated defect spatial signature analysis for semiconductor manufacturing process  

DOE Patents [OSTI]

An apparatus and method for performing automated defect spatial signature alysis on a data set representing defect coordinates and wafer processing information includes categorizing data from the data set into a plurality of high level categories, classifying the categorized data contained in each high level category into user-labeled signature events, and correlating the categorized, classified signature events to a present or incipient anomalous process condition.

Tobin, Jr., Kenneth W. (Harriman, TN); Gleason, Shaun S. (Knoxville, TN); Karnowski, Thomas P. (Knoxville, TN); Sari-Sarraf, Hamed (Knoxville, TN)

1999-01-01T23:59:59.000Z

290

Examples of embedded defects (in particle physics and condensed matter)  

Science Journals Connector (OSTI)

We present a series of examples designed to clarify the formalism of the previous paper. After summarizing this formalism in a prescriptive sense, we run through several examples: first, deriving the embedded defect spectrum for the Weinberg-Salam theory, then discussing several examples designed to illustrate facets of the formalism. We then calculate the embedded defect spectrum for three physical grand unified theories and conclude with a discussion of vortices formed in the superfluid 3He-A phase transition.

Nathan F. Lepora and Anne-Christine Davis

1998-11-23T23:59:59.000Z

291

Dark matter from cosmic defects on galactic scales?  

SciTech Connect (OSTI)

We discuss the possible dynamical role of extended cosmic defects on galactic scales, specifically focusing on the possibility that they may provide the dark matter suggested by the classical problem of galactic rotation curves. We emphasize that the more standard defects (such as Goto-Nambu strings) are unsuitable for this task but show that more general models (such as transonic wiggly strings) could in principle have a better chance. In any case, we show that observational data severely restricts any such scenarios.

Guerreiro, N.; Carvalho, J. P. M. de [Centro de Astrofisica da Universidade do Porto, Rua das Estrelas, 4150-762 Porto (Portugal); Departamento de Matematica Aplicada da, Faculdade de Ciencias da Universidade do Porto, Rua do Campo Alegre 687, 4169-007, Porto (Portugal); Avelino, P. P. [Centro de Fisica do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); Departamento de Fisica da Faculdade de Ciencias da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); Martins, C. J. A. P. [Centro de Astrofisica da Universidade do Porto, Rua das Estrelas, 4150-762 Porto (Portugal); DAMTP, University of Cambridge, Wilberforce Road, Cambridge CB3 0WA (United Kingdom)

2008-09-15T23:59:59.000Z

292

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

293

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

294

Effects of a modified through-mask drinking system (MDS) on fluid intake during exercise in chemical protective gear. Report for January-May 1989  

SciTech Connect (OSTI)

This study was designed to evaluate the effects of a modified through-mask drinking system (MDS) on voluntary fluid consumption. Eighteen male volunteers walked on a treadmill (4.02 km/hr, 0 deg. grade, 50 min/hr for 6 hr) in a climatic chamber (dry bulb=32.6 deg C, wet bulb=17.5 deg C, 20.4% relative humidity, and windspeed=8.05 km/hr, producing a WBGT of 22.1 deg C). Subjects wore chemical protective gear (trousers, jacket, boots, gloves, and M17A1 protective mask) and were randomly assigned one of two through-mask and were randomly assigned one of two through-mask drinking systems: CS (n=9), the current gravity fed system or MDS (n=9), a prototype hand-pump drinking system. Because decontamination of the mask and drinking connections was performed prior to drinking, the overall use of the CS was rated significantly more difficult during both work and rest than the MDS. Failure to decontaminate connections prior to drinking was noted early in the trial in 2 soldiers using the CS suggesting an increase risk of accidental contamination associated with this system. Drinking with the MDS had no measurable adverse effect on hydration status of the test subjects: water intake rate, 0.36 L/hr (CS) and 0.42 L/hr (MDS); sweat rate, 0.63 L/hr (CS) and 0.67 L/hr (MDS); body weight loss, 0.32 %/hr (CS) and 0.31 %/hr (MDS).

Szlyk, P.C.; Sils, I.V.; Tharion, W.J.; Francesconi, R.P.; Mahnke, R.B.

1989-10-12T23:59:59.000Z

295

Fire tests on defective tank-car thermal protection systems  

Science Journals Connector (OSTI)

Many railway tank-cars carrying hazardous materials are thermally protected from fire impingement by thermal insulation and a steel jacket applied to the outside of the tank-car shell. Over time, it is possible that the thermal insulation will sag, rip, degrade, or be crushed under the steel jacket. A thermographic technique to determine whether or not a tank has insulation deficiencies has been developed, but it is necessary to determine which thermal deficiencies do not affect a tank’s survivability in a fire and which thermal deficiencies must be repaired. In order to develop a guideline in assessing thermal defects, a thermal model and experimental data would be beneficial. A series of fire tests were performed on a quarter-section tank-car mock-up to assist in developing a guideline and to provide validation data for a thermal model. Twelve fire tests, with constant, credible, simulated pool fire conditions, were performed on the tank-car mock-up with various insulation deficiencies. An infrared thermal imaging camera was used to measure the tank wall temperature. The thermal images were useful in determining the temperature profiles across the defects at different times and the transient temperature behaviour at different locations. It was seen that the properly installed thermal protection system significantly reduced the heat transfer from the fire to the tank wall. It was also seen that the steel jacket alone (i.e. 100% defect) acted as a radiation shield and provided a significant level of protection. With small defects, it was observed that the surrounding protected material provided a cooling effect by thermal conduction. A square defect greater than about 40 cm on each side should be considered significant, because unlike smaller defects, there is little benefit from the surrounding material as far as the peak defect temperature is concerned.

J.D.J VanderSteen; A.M Birk

2003-01-01T23:59:59.000Z

296

Invisible surface defects in a tight-binding lattice  

E-Print Network [OSTI]

Surface Tamm states arise in one-dimensional lattices from some defects at the lattice edge and their energy generally falls in a gap of the crystal. The defects at the surface change rather generally the phase of propagative Bloch waves scattered off at the lattice edge, so that an observer, far from the surface, can detect the existence of edge defects from e.g. time-of-flight measurements as a delay or an advancement of a Bloch wave packet. Here we show that a special class of defects can sustain surface Tamm states which are invisible, in a sense that reflected waves acquire the same phase as in a fully homogeneous lattice with no surface state. Surface states have an energy embedded into the tight-binding lattice band and show a lower than exponential (algebraic) localization. Like most of bound states in the continuum of von Neumann - Wigner type, such states are fragile and decay into resonance surface states in presence of perturbations or lattice disorder. The impact of structural lattice imperfections and disorder on the invisibility of the defects is investigated by numerical simulations.

Stefano Longhi

2014-06-24T23:59:59.000Z

297

Defect formation mechanism during PECVD of a-Si:H  

SciTech Connect (OSTI)

Defect formation mechanism in a-Si:H during PECVD at substrate temperature below 250 C is considered to be breaking of weak bonds in the Urbach tail. To break weak bonds, an extra energy is necessary. This energy is supplied by the reaction energy of SiH{sub 3} precursor at the growing surface incorporating SiH{sub 2} into the network. The defect density is experimentally shown to be proportional to a product of the energy supply frequency, i.e., SiH{sub 2} density, and the weak bond density which is obtained by the Urbach energy. By analysis using the configurational coordinate diagram the energy level of the broken weak bond is determined to be 0.2 eV above the valence band mobility edge. There is similarity of the defect formation mechanism during deposition to that of the Staebler-Wronski effect.

Maeda, Keiji; Umezu, Ikurou

1997-07-01T23:59:59.000Z

298

Graphene defect formation by extreme ultraviolet generated photoelectrons  

E-Print Network [OSTI]

We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80 eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transformation from microcrystalline to nanocrystalline and then further to amorphous carbon. Further, irradiation of graphene with increased water partial pressure does not significantly change the Raman spectra, which suggests that, in the extremely low energy range, e-beam induced chemical reactions between residual water and graphene is not the dominant mechanism driving defect formation in graphene. Single layer graphene, par...

Gao, A; Bijkerk, F

2014-01-01T23:59:59.000Z

299

Additive manufacturing for in situ repair of osteochondral defects  

Science Journals Connector (OSTI)

Tissue engineering holds great promise for injury repair and replacement of defective body parts. While a number of techniques exist for creating living biological constructs in vitro, none have been demonstrated for in situ repair. Using novel geometric feedback-based approaches and through development of appropriate printing-material combinations, we demonstrate the in situ repair of both chondral and osteochondral defects that mimic naturally occurring pathologies. A calf femur was mounted in a custom jig and held within a robocasting-based additive manufacturing (AM) system. Two defects were induced: one a cartilage-only representation of a grade IV chondral lesion and the other a two-material bone and cartilage fracture of the femoral condyle. Alginate hydrogel was used for the repair of cartilage; a novel formulation of demineralized bone matrix was used for bone repair. Repair prints for both defects had mean surface errors less than 0.1 mm. For the chondral defect, 42.8 ± 2.6% of the surface points had errors that were within a clinically acceptable error range; however, with 1 mm path planning shift, an estimated ~75% of surface points could likely fall within the benchmark envelope. For the osteochondral defect, 83.6 ± 2.7% of surface points had errors that were within clinically acceptable limits. In addition to implications for minimally invasive AM-based clinical treatments, these proof-of-concept prints are some of the only in situ demonstrations to-date, wherein the substrate geometry was unknown a priori. The work presented herein demonstrates in situ AM, suggests potential biomedical applications and also explores in situ-specific issues, including geometric feedback, material selection and novel path planning techniques.

Daniel L Cohen; Jeffrey I Lipton; Lawrence J Bonassar; Hod Lipson

2010-01-01T23:59:59.000Z

300

Sub-degree Scale Microwave Anisotropies from Cosmic Defects  

E-Print Network [OSTI]

If current ideas about unified field theories are correct, macroscopic cosmic defects may well exist. The observation of such an entity would have enormous significance for our understanding of fundamental physics. This paper points out a novel observable signature of cosmic texture and global monopoles, namely strong hot spots in the cosmic microwave anisotropy pattern on subdegree scales. This signal should be readily detectable by the next generation of anisotropy mapping experiments. The signature arises from overdensities in the photon-baryon fluid generated by the gravitational attraction of the defects. The angular power spectrum of the anisotropy fluctuations on subdegree scales is also calculated, for cosmic string, global monopoles, and texture.

Neil Turok

1996-06-16T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

On the material geometry of continuously defective corrugated graphene sheets  

E-Print Network [OSTI]

Geometrical objects describing the material geometry of continuously defective graphene sheets are introduced and their compatibility conditions are formulated. Effective edge dislocations embedded in the Riemann-Cartan material space and defined by their scalar density and by local Burgers vectors, are considered. The case of secondary curvature-type defects created by this distribution of dislocations is analysed in terms of the material space. The variational geometry of the material space closely related with the existence of a characteristic length parameter is proposed. The formula which describes, in a reference temperature, the influence of dislocations on the material Riemannian metric, is given.

Andrzej Trzesowski

2014-07-05T23:59:59.000Z

302

On the defect induced gauge and Yukawa fields in graphene  

E-Print Network [OSTI]

We consider lattice deformations (both continuous and topological) in the hexagonal lattice Hubbard model in the tight binding approximation to graphene, involving operators with the range up to next-to-neighbor. In the low energy limit, we find that these deformations give rise to couplings of the electronic Dirac field to an external scalar (Yukawa) and gauge fields. The fields are expressed in terms of original defects. As a by-product we establish that the next-to-nearest order is the minimal range of deformations which produces the complete gauge and scalar fields. We consider an example of Stone--Wales defect, and find the associated gauge field.

Corneliu Sochichiu

2010-12-24T23:59:59.000Z

303

Measuring Point Defect Density in Individual Carbon Nanotubes Using  

E-Print Network [OSTI]

based on defec- tive nanotubes also show improved sensitivity.7 Recently, high-energy electron and ionMeasuring Point Defect Density in Individual Carbon Nanotubes Using Polarization-Dependent X in carbon nanotubes (CNTs) dramatically alter their physical, mechani- cal, and electronic properties.1

Hitchcock, Adam P.

304

Convergence properties of the local defect correction method for parabolic  

E-Print Network [OSTI]

and, for a one-dimensional heat equation, we study its properties analytically. Numerical experiment of adaptive grid techniques. In adaptive grid methods, a fine grid spacing and a relatively small time step requirements are minimized. An adaptive grid technique of particular interest is the Local Defect Correction

Eindhoven, Technische Universiteit

305

Defects and Faults in Quantum Cellular Automata at Nano Scale  

E-Print Network [OSTI]

Defects and Faults in Quantum Cellular Automata at Nano Scale Mehdi Baradaran Tahoori, Mariam considerable research on quantum dot cellular automata (QCA) as a new computing scheme in the nano, quantum dot cellular automata (QCA) not only gives a solution at nano scale, but also it offers a new

306

Atomic Computer Simulations of Defect Migration in 3C and 4H...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Computer Simulations of Defect Migration in 3C and 4H-SiC. Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC. Abstract: Knowledge of the migration of intrinsic point...

307

Operating Experience Level 3: Radcalc V4.1 Software Defect |...  

Broader source: Energy.gov (indexed) [DOE]

OE-3 2011-01: Radcalc V4.1 Software Defect Operating Experience Level 3: Radcalc V4.1 Software Defect More Documents & Publications RADCALC DOE-STD-3013-2012 DOE-HDBK-1129-2007...

308

Phase fluctuations and the absence of topological defects in photo-excited charge ordered nickelate  

E-Print Network [OSTI]

of topological defects in a photo-excited charge-orderedof topological defects in a photo-excited charge-orderedremains unchanged in the photo-excited transient state.

Lee, W.S.

2014-01-01T23:59:59.000Z

309

Identification of structural defects in graphitic materials by gas-phase anisotropic etching  

E-Print Network [OSTI]

Identification of structural defects in graphitic materials by gas-phase anisotropic etching Shuang interest but also industrial importance, as the existence of surface and bulk defects inevitably influences

Zhang, Guangyu

310

Impact of Point Defects on Electronic Structure in YTiO. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

defect states are available to tune this U value, care must be taken in applying DFT+U to electronic structure calculations of Y&8322;Ti&8322;O&8327; with point defects. Based...

311

Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography  

SciTech Connect (OSTI)

The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-07-07T23:59:59.000Z

312

Indirect selection for plasmid mutants: isolation of ColVBtrp mutants defective in self-maintenance in Escherichia coli.  

Science Journals Connector (OSTI)

...isolation of ColVBtrp mutants defective in self-maintenance in Escherichia...fact, many of the mutants defective in plasmid maintenance were...characterization of strains car- rying mutated plasmids defective in self-main- tenance has...

A H Koyama; C Wada; T Nagata; T Yura

1975-04-01T23:59:59.000Z

313

DISSERTATION Role of the Cu-O Defect in CdTe Solar Cells  

E-Print Network [OSTI]

OF THE CU-O DEFECT COMPLEX IN CDTE SOLAR CELLS Thin-film CdTe is one of the leading materials used the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdDISSERTATION Role of the Cu-O Defect in CdTe Solar Cells Submitted by Caroline R. Corwine

Sites, James R.

314

Stability of irradiation-induced point defects on walls of carbon nanotubes  

E-Print Network [OSTI]

Stability of irradiation-induced point defects on walls of carbon nanotubes A. V. Krasheninnikov #3 of atomic-scale irradiation- induced defects on walls of carbon nanotubes. Since atomic vacancies. Carbon nanotubes; C. Computational chemistry; Scanning tunneling microscopy; D. Defects; Electronic

Nordlund, Kai

315

Generation of defective virus after infection of newborn rats with reovirus.  

Science Journals Connector (OSTI)

...Research Article Generation of defective virus after infection of newborn...exceptions to this are described. Defective virions lacking the L1 segment...of cells J. VIROL. 4 .4 DEFECTIVE REOVIRUS IN VIVO 243 1? i...other experiments were being car- ried out with A mutants in...

D A Spandidos; A F Graham

1976-10-01T23:59:59.000Z

316

Reduced COX-2 Protein in Colorectal Cancer with Defective Mismatch Repair  

Science Journals Connector (OSTI)

...Protein in Colorectal Cancer with Defective Mismatch Repair 1 1 This work...typic characteristics of defective DNA mismatch repair express...may arise in the setting of defective DNA mismatch repair. INTRODUCTION...sporadic colorectal adenomas and car cinomas (6-7) and in FAP...

William E. Karnes, Jr.; Rebecca Shattuck-Brandt; Lawrence J. Burgart; Raymond N. DuBois; David J. Tester; Julie M. Cunningham; Cheong-Yong Kim; Shannon K. McDonnell; Daniel J. Schaid; and Stephen N. Thibodeau

1998-12-01T23:59:59.000Z

317

Subgenomic mRNA in OK10 Defective Leukemia Virus-Transformed Cells  

Science Journals Connector (OSTI)

...Viruses Subgenomic mRNA in OK10 Defective Leukemia Virus-Transformed...Helsinki 29, Finland OK10, a defective leukemia virus, is produced...transcriptase assay. OK10 defective viral particles were purified...transcriptase assay was then car- ried out as follows: purified...

S. Saule; A. Sergeant; G. Torpier; M. B. Raes; S. Pfeifer; D. Stehelin

1982-04-01T23:59:59.000Z

318

Virulence of Streptococcus mutans: Restoration of Pathogenesis of a Glucosyltransferase-Defective Mutant (C4)  

Science Journals Connector (OSTI)

...an avirulent, aggregation-defective mutant of S. mutans 6715 WT...of pathogenesis of a GTF-defective mutant of S. mutans can be...complementation with a mutant defective in aggregation properties or...humans is undoubedly dental car- ies (24). Streptococcus...

Masatomo Hirasawa; Hiroshi Kiyono; Tetsuo Shiota; Richard A. Hull; Roy Curtiss III; Suzanne M. Michalek; Jerry R. McGhee

1980-03-01T23:59:59.000Z

319

Residual Magnetic Flux Leakage: A Possible Tool for Studying Pipeline Defects  

E-Print Network [OSTI]

Residual Magnetic Flux Leakage: A Possible Tool for Studying Pipeline Defects Vijay Babbar1 weaker flux signals. KEY WORDS: Magnetic flux leakage; residual magnetization; pipeline defects; pipeline pipelines, which may develop defects such as corrosion pits as they age in service.(1) Under the ef- fect

Clapham, Lynann

320

Oxygen sublattice defect in cobalt oxide : formation, migration, charge localization and thermodynamic processes  

E-Print Network [OSTI]

643 Oxygen sublattice defect in cobalt oxide : formation, migration, charge localization of oxygen defects in CoO using classical simulations. The charge localization in the oxygen vacancy has]. The defect concentration in the oxygen sublattice is several orders of magnitude smaller, but never- theless

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Testing the theory of relative defect proneness for closed-source software  

Science Journals Connector (OSTI)

Recent studies on open-source software (OSS) products report that smaller modules are proportionally more defect prone compared to larger ones. This phenomenon, referred to as the Theory of Relative Defect Proneness (RDP), challenges the traditional ... Keywords: Closed---source software, Planning for software quality assurance, Size---defect relationship, Software inspections, Software metrics, Software reviews, Software science, Software testing

Gunes Koru; Hongfang Liu; Dongsong Zhang; Khaled Emam

2010-12-01T23:59:59.000Z

322

Ab Initio Studies of Vacancy-Defected Fullerenes and Single-Walled Carbon  

E-Print Network [OSTI]

Ab Initio Studies of Vacancy-Defected Fullerenes and Single-Walled Carbon Nanotubes LEI VINCENT LIU- vacancy-defected fullerenes, C60 and C70, and the single- and double-vacancy-defected single-walled carbon nanotubes (SWCNTs) were studied within density functional theory. The isomerization barriers for the single-vacancy

Wang, Yan Alexander

323

A simulation model of focus and radial servos in Compact Disc players with Disc surface defects  

E-Print Network [OSTI]

A simulation model of focus and radial servos in Compact Disc players with Disc surface defects P of controllers handling surface defects easier. A simulation model of Compact Disc players playing discs of the controller has been based on trial and error on real test systems since no simulation models of the defects

Wickerhauser, M. Victor

324

Extreme ultraviolet induced defects on few-layer graphene  

SciTech Connect (OSTI)

We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H{sub 2} background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp{sup 2} bonded carbon fraction decreases while the sp{sup 3} bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

Gao, A.; Zoethout, E.; Lee, C. J. [FOM-Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein (Netherlands)] [FOM-Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein (Netherlands); Rizo, P. J.; Scaccabarozzi, L.; Banine, V. [ASML, De Run 6501, 5504DR Veldhoven (Netherlands)] [ASML, De Run 6501, 5504DR Veldhoven (Netherlands); Bijkerk, F. [FOM-Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein (Netherlands) [FOM-Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2013-07-28T23:59:59.000Z

325

Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels  

SciTech Connect (OSTI)

Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

Drummond, T.J.

1999-03-11T23:59:59.000Z

326

Improving Cooling performance of the mechanical resonator with the two-level-system defects  

E-Print Network [OSTI]

We study cooling performance of a realistic mechanical resonator containing defects. The normal cooling method through an optomechanical system does not work efficiently due to those defects. We show by employing periodical $\\sigma_z$ pulses, we can eliminate the interaction between defects and their surrounded heat baths up to the first order of time. Compared with the cooling performance of no $\\sigma_z$ pulses case, much better cooling results are obtained. Moreover, this pulse sequence has an ability to improve the cooling performance of the resonator with different defects energy gaps and different defects damping rates.

Tian Chen; Xiang-Bin Wang

2014-06-03T23:59:59.000Z

327

Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates  

SciTech Connect (OSTI)

We prepared InAs nanowires (NWs) by lateral growth on GaAs (110) masked substrates in molecular beam epitaxy. We measured magneto-transport properties of the InAs NWs. In spite of parallel-NW multi-channels, we observed fluctuating magneto-conductance. From the fluctuation, we evaluated phase coherence length as a function of measurement temperature, and found decrease in the length with increase in the temperature. We also evaluate phase coherence length as a function of gate voltage.

Akabori, M.; Yamada, S. [Center for Nano-Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1, Asahidai, Nomi, Ishikawa 923-1292 (Japan)

2013-12-04T23:59:59.000Z

328

Optimization of neon soft X-rays emission from 200 J fast miniature dense plasma focus device: A potential source for soft X-ray lithography  

Science Journals Connector (OSTI)

Abstract The neon soft X-ray (SXR) emission characteristics of a Fast Miniature Plasma Focus (FMPF-3) device have been investigated. The FMPF-3 device used for our experiment is of sub-kilojoule energy capacity, which is an order of magnitude lesser than the other well established plasma focus devices. The influence of different geometrical parameters of the anode and the pressure of the filling gas on the SXR emission was investigated to optimize the neon SXR yield and thereby make it a potential source for X-ray lithography. The SXR signal, solely from the desired, characteristic spectral range (900–1600) eV was selectively extracted and acquired using appropriate X-ray absorption filters on diode X-ray spectrometer. It was found that the neon SXR emission from 17 mm long cylindrical anode, which produced best neutron yields, was rather poor, in a very narrow pressure range and that too at low operating pressure. With decrease in the length of cylindrical anode, the optimum operating pressure shifts to higher pressure side, the working pressure range widens and the SXR yield also increases until the anode length is reduced to 12 mm, after which, the SXR yield and working pressure range start to degrade. The highest neon SXR yield of 1.1 J/shot, corresponding to a wall plug efficiency of 0.57%, was obtained for 12 mm long cylindrical anode. The tapered anodes with different length were also designed and tested, but they did not show any significant improvement in neon SXR yield.

S.M.P. Kalaiselvi; T.L. Tan; A. Talebitaher; P. Lee; R.S. Rawat

2013-01-01T23:59:59.000Z

329

Defect Chaos of Oscillating Hexagons in Rotating Convection  

SciTech Connect (OSTI)

Using coupled Ginzburg-Landau equations, the dynamics of hexagonal patterns with broken chiral symmetry are investigated, as they appear in rotating non-Boussinesq or surface-tension-driven convection. We find that close to the secondary Hopf bifurcation to oscillating hexagons the dynamics are well described by a single complex Ginzburg-Landau equation (CGLE) coupled to the phases of the hexagonal pattern. At the band center these equations reduce to the usual CGLE and the system exhibits defect chaos. Away from the band center a transition to a frozen vortex state is found. (c) 2000 The American Physical Society.

Echebarria, Blas; Riecke, Hermann

2000-05-22T23:59:59.000Z

330

Kinetics of light induced defect creation in organic solar cells  

Science Journals Connector (OSTI)

The kinetics of light-induced recombination centers in bulk heterojunction organic solar cells are measured as a function of exposure time intensity and the illumination photon energy. The density of induced centers increases with exposure but stabilizes partially due to self-annealing. UV exposure is roughly 50 times more effective for defect creation than white light or yellow-filtered white light. Light-induced breaking of C-H bonds to create H-related localized states is proposed as the underlying mechanism.

R. A. Street; D. M. Davies

2013-01-01T23:59:59.000Z

331

Defect characterization and classification for the ICON inspection reliability trials  

SciTech Connect (OSTI)

A major series of inspection reliability trials have been conducted as part of the ICON project, a THERMIE Joint Industry project. Part of the ICON work involved developing a procedure for characterization of the library of cracks. This will be reported in the paper. A second area considered was that of defect classification. This involved a reassessment of previously used classification, in the light of risk based inspection scheduling requirements, and the introduction of a new classification based on PD6493. This work will also be reported together with examples of the measured Probability of Detection curves.

Dover, W.D.; Rudlin, J. [University College London (United Kingdom). NDE Center

1996-12-31T23:59:59.000Z

332

Preshot Predictions for Defect Induced Mix (DIME) Capsules  

SciTech Connect (OSTI)

In this memo, we evaluate the most probable yield and other results for the Defect Induced Mix (DIME-12A) Polar Direct Drive (PDD) capsule-only shots. We evaluate the expected yield, bang time, burn averaged ion temperature, and the average electron temperature of the Ge line-emitting region. We also include synthetic images of the capsule backlit by Cu K-{alpha} emission (8.39 keV) and core self-emission synthetic images. This memo is a companion to the maximum credible yield memo (LA-UR-12-00287) published earlier.

Bradley, Paul A. [Los Alamos National Laboratory; Krasheninnikova, Natalia S. [Los Alamos National Laboratory; Tregillis, Ian L. [Los Alamos National Laboratory; Schmitt, Mark J. [Los Alamos National Laboratory

2012-07-31T23:59:59.000Z

333

Defect Prevention and Detection in Software for Automated Test Equipment  

SciTech Connect (OSTI)

Software for automated test equipment can be tedious and monotonous making it just as error-prone as other software. Active defect prevention and detection are also important for test applications. Incomplete or unclear requirements, a cryptic syntax used for some test applications—especially script-based test sets, variability in syntax or structure, and changing requirements are among the problems encountered in one tester. Such problems are common to all software but can be particularly problematic in test equipment software intended to test another product. Each of these issues increases the probability of error injection during test application development. This report describes a test application development tool designed to address these issues and others for a particular piece of test equipment. By addressing these problems in the development environment, the tool has powerful built-in defect prevention and detection capabilities. Regular expressions are widely used in the development tool as a means of formally defining test equipment requirements for the test application and verifying conformance to those requirements. A novel means of using regular expressions to perform range checking was developed. A reduction in rework and increased productivity are the results. These capabilities are described along with lessons learned and their applicability to other test equipment software. The test application development tool, or “application builder”, is known as the PT3800 AM Creation, Revision and Archiving Tool (PACRAT).

E. Bean

2006-11-30T23:59:59.000Z

334

Space time as a continuum with a point defect  

E-Print Network [OSTI]

In cosmology it has become usual to try and explain observational data, such as the temperature distribution of the cosmic microwave background or the accelerated expansion of the universe, introducing new entities as dark matter and dark energy. Here we describe a different approach treating space time as a continuum endowed with properties similar to the ones of ordinary material continua, such as internal viscosity and strain distributions originated by defects in the texture. A Lagrangian modelled on the one valid for simple dissipative phenomena in fluids is build and used for empty space time. The internal "viscosity" is shown to correspond to a four-vector field. Using the known symmetry of the universe, assuming the vector field to be divergence-less and solving the Euler-Lagrange equation we obtain directly inflation and a phase of accelerated expansion of space time. The vector field is shown to be connected with the displacement vector field induced by a point defect in a four-dimensional continuum...

Tartaglia, A

2006-01-01T23:59:59.000Z

335

Multichannel Quantum Defect Theory of Strontium Rydberg Series  

E-Print Network [OSTI]

Using the reactance matrix approach, we systematically develop new multichannel quantum defect theory models for the singlet and triplet S, P, D and F states of strontium based on improved energy level measurements. The new models reveal additional insights into the character of doubly excited perturber states, and the improved energy level measurements for certain series allow fine structure to be resolved for those series' perturbers. Comparison between the predictions of the new models and those of previous empirical and \\emph{ab initio} studies reveals good agreement with most series, however some discrepancies are highlighted. Using the multichannel quantum defect theory wave functions derived from our models we calculate other observables such as Land\\'e $g_J$-factors and radiative lifetimes. The analysis reveals the impact of perturbers on the Rydberg state properties of divalent atoms, highlighting the importance of including two-electron effects in the calculations of these properties. The work enables future investigations of properties such as Stark maps and long-range interactions of Rydberg states of strontium.

C L Vaillant; M P A Jones; R M Potvliege

2014-02-24T23:59:59.000Z

336

Defective graphene as promising anode material for Na-ion battery and Ca-ion battery  

E-Print Network [OSTI]

We have investigated adsorption of Na and Ca on graphene with divacancy (DV) and Stone-Wales (SW) defect. Our results show that adsorption is not possible on pristine graphene. However, their adsorption on defective sheet is energetically favorable. The enhanced adsorption can be attributed to the increased charge transfer between adatoms and underlying defective sheet. With the increase in defect density until certain possible limit, maximum percentage of adsorption also increases giving higher battery capacity. For maximum possible DV defect, we can achieve maximum capacity of 1459 mAh/g for Na-ion batteries (NIBs) and 2900 mAh/g for Ca-ion batteries (CIBs). For graphene full of SW defect, we find the maximum capacity of NIBs and CIBs is around 1071 mAh/g and 2142 mAh/g respectively. Our results will help create better anode materials with much higher capacity and better cycling performance for NIBs and CIBs.

Datta, Dibakar; Shenoy, Vivek B

2013-01-01T23:59:59.000Z

337

Polymer defect states modulate open-circuit voltage in bulk-heterojunction solar cells  

SciTech Connect (OSTI)

Defect states influence the operation of organic solar cells altering transport, recombination, and energetic mechanisms. This work investigates how processing conditions induce morphology-related, electrically active defects in the donor polymer of bulk-heterojunction solar cells. Structural order is inferred from absorption and X-ray diffraction data, while defect density is determined from capacitance methods. A correlation is observed between the polymer nanocrystallite size, the defect concentration, and the output voltage. For the case of poly(3-hexylthiophene), processing that promote crystallinity is beneficial for the device performance as it decreases the defect density (energy disorder) that finally enlarges the maximum achievable open-circuit voltage. Defect states within the effective bandgap modulate the downshift of the hole Fermi level upon illumination that in turn establishes the achievable open-circuit voltage.

Ripolles, Teresa S.; Guerrero, Antonio; Garcia-Belmonte, Germŕ, E-mail: garciag@uji.es [Photovoltaic and Optoelectronic Devices Group, Departament de Física, Universitat Jaume I, ES-12071 Castelló (Spain)] [Photovoltaic and Optoelectronic Devices Group, Departament de Física, Universitat Jaume I, ES-12071 Castelló (Spain)

2013-12-09T23:59:59.000Z

338

Heterotic Surface Defects and Dualities from 2d/4d Indices  

E-Print Network [OSTI]

Starting with the superconformal indices for 4d N=2 and N=1 supersymmetric gauge theories, which are related by superpotential deformation, we perform the contour integrations and isolate the residue contributions which can be attributed to the surface defects. These defects can be interpreted as the IR limit of dynamical vortices. Given the 2d N=(2,2) and N=(0,2) world sheet theories for these surface defects, we then verify this statement by explicitly computing their elliptic genera and identifying their fugacity parameters through superconformal algebras. We show them precisely match, and the results extend previous prescriptions for inserting surface defects into 4d supersymmetric partition functions to N=1 setting. We also study how 4d N=1 IR dualities descend into the N=(0,2) world sheet theories of their surface defects, and extend the N=(2,2) triality observed earlier to other N=(0,2) surface defects unrelated to dynamical vortices.

Heng-Yu Chen; Hsiao-Yi Chen

2014-07-17T23:59:59.000Z

339

First principles predictions of intrinsic defects in aluminum arsenide, AlAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in aluminum arsenide, AlAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz, 'First principles predictions of intrinsic defects in Aluminum Arsenide, AlAs', Materials Research Society Symposia Proceedings 1370 (2011; SAND2011-2436C), and intended for use as reference tables for a defect physics package in device models.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

340

Origin of type-C defects on the Si(100)-(2×1) surface  

Science Journals Connector (OSTI)

The generation processes of type-C defects on the Si(100)-(2×1) surface have been systematically investigated by using scanning tunneling microscopy and infrared absorption spectroscopy. We show that the type-C defect is extrinsic, being caused by bimolecular dissociative adsorption of H2O in the ultrahigh vacuum environment. A structural model of the type-C defect is proposed.

Masayasu Nishizawa; Tetsuji Yasuda; Satoshi Yamasaki; Kazushi Miki; Masanori Shinohara; Nozomu Kamakura; Yasuo Kimura; Michio Niwano

2002-03-28T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Physical Modeling of Transient Enhanced Diusion and Dopant Deactivation via Extended Defect Evolution  

E-Print Network [OSTI]

Physical Modeling of Transient Enhanced Diusion and Dopant Deactivation via Extended Defect requires the use of well-founded physical models for these aggregation processes. We have developed

Dunham, Scott

342

E-Print Network 3.0 - acetabular bone defect Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Journal of Arthroplasty Vol. 14 No. 7 1999 Case Report Summary: modular head and polyethylene liner. Bone defects were filled with morcellized allograft. Three months......

343

Energy Dissipation to Defect Evolution (EDDE) | U.S. DOE Office...  

Office of Science (SC) Website

Dissipation to Defect Evolution (EDDE) Energy Frontier Research Centers (EFRCs) EFRCs Home Centers EFRC External Websites Research Science Highlights News & Events Publications...

344

RKKY interaction between extended magnetic defect lines in graphene  

Science Journals Connector (OSTI)

Of fundamental interest in the field of spintronics is the mechanism of indirect exchange coupling between magnetic impurities embedded in metallic hosts. A range of physical features, such as magnetotransport and overall magnetic moment formation, are predicated upon this magnetic coupling, often referred to as the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. Recent theoretical studies on the RKKY in graphene have been motivated by possible spintronic applications of magnetically doped graphene systems. In this paper a combination of analytic and numerical techniques are used to examine the effects of defect dimensionality on such an interaction. We show, in a mathematically transparent manner, that moving from single magnetic impurities to extended lines of impurities effectively reduces the dimensionality of the system and increases the range of the interaction. This has important consequences for the spintronic application of magnetically-doped systems, and we illustrate this with a simple magnetoresistance device.

P. D. Gorman; J. M. Duffy; S. R. Power; M. S. Ferreira

2014-09-08T23:59:59.000Z

345

Electrodes mitigating effects of defects in organic electronic devices  

DOE Patents [OSTI]

A compound electrode for organic electronic devices comprises a thin first layer of a first electrically conducting material and a second electrically conducting material disposed on the first layer. In one embodiment, the second electrically conducting material is formed into a plurality of elongated members. In another embodiment, the second material is formed into a second layer. The elongated members or the second layer has a thickness greater than that of the first layer. The second layer is separated from the first layer by a conducting material having conductivity less than at least the material of the first layer. The compound electrode is capable of mitigating adverse effects of defects, such as short circuits, in the construction of the organic electronic devices, and can be included in light-emitting or photovoltaic devices.

Heller, Christian Maria Anton (Albany, NY)

2008-05-06T23:59:59.000Z

346

Embedded defects and symmetry breaking in flipped SU(5)  

Science Journals Connector (OSTI)

We explicitly show the analogy between the symmetry-breaking scheme for the GUT flipped SU(5) with that of the Weinberg-Salam theory of electroweak interactions. This allows us to construct the embedded defect spectrum of the flipped SU(5) theory. We find that the spectrum consists of twelve gauge-equivalent unstable leptoquark strings, which are analogous to W strings in electroweak theory, and another string that is gauge inequivalent to the leptoquark strings which we call the ‘‘V string.’’ The V string is analogous to the Z string of electroweak theory, correspondingly admitting a stable semilocal limit. Using data on the running coupling constants we indicate that in the nonsupersymmetric case V strings can be stable for part of the physically viable parameter space. Cosmological consequences are briefly discussed. © 1995 The American Physical Society.

Anne-Christine Davis and Nathan F. Lepora

1995-12-15T23:59:59.000Z

347

Directed polymers in a random environment with a defect line  

E-Print Network [OSTI]

We study the depinning transition of the $1+1$ dimensional directed polymer in a random environment with a defect line. The random environment consists of i.i.d. potential values assigned to each site of $\\mathbb{Z}^2$; sites on the positive axis have the potential enhanced by a deterministic value $u$. We show that for small inverse temperature $\\beta$ the quenched and annealed free energies differ significantly at most in a small neighborhood (of size of order $\\beta$) of the annealed critical point $u_c^a=0$. For the case $u=0$, we show that the difference between quenched and annealed free energies is of order $\\beta^4$ as $\\beta\\to 0$, assuming only finiteness of exponential moments of the potential values, improving existing results which required stronger assumptions.

Kenneth S. Alexander; Gökhan Yildirim

2014-02-26T23:59:59.000Z

348

Point-defect optical transitions and thermal ionization energies from quantum Monte Carlo methods: Application to the F-center defect in MgO  

E-Print Network [OSTI]

We present an approach to calculation of point-defect optical and thermal ionization energies based on the highly accurate quantum Monte Carlo methods. The use of an inherently many-body theory that directly treats electron ...

Ertekin, Elif

349

Masked-backlighter technique used to simultaneously image x-ray absorption and x-ray emission from an inertial confinement fusion plasma  

SciTech Connect (OSTI)

A method to simultaneously image both the absorption and the self-emission of an imploding inertial confinement fusion plasma has been demonstrated on the OMEGA Laser System. The technique involves the use of a high-Z backlighter, half of which is covered with a low-Z material, and a high-speed x-ray framing camera aligned to capture images backlit by this masked backlighter. Two strips of the four-strip framing camera record images backlit by the high-Z portion of the backlighter, while the other two strips record images aligned with the low-Z portion of the backlighter. The emission from the low-Z material is effectively eliminated by a high-Z filter positioned in front of the framing camera, limiting the detected backlighter emission to that of the principal emission line of the high-Z material. As a result, half of the images are of self-emission from the plasma and the other half are of self-emission plus the backlighter. The advantage of this technique is that the self-emission simultaneous with backlighter absorption is independently measured from a nearby direction. The absorption occurs only in the high-Z backlit frames and is either spatially separated from the emission or the self-emission is suppressed by filtering, or by using a backlighter much brighter than the self-emission, or by subtraction. The masked-backlighter technique has been used on the OMEGA Laser System to simultaneously measure the emission profiles and the absorption profiles of polar-driven implosions.

Marshall, F. J., E-mail: fredm@lle.rochester.edu; Radha, P. B. [Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623 (United States)

2014-11-15T23:59:59.000Z

350

Defect-Free, Size-Tunable Graphene for High-Performance Lithium Ion Battery  

Science Journals Connector (OSTI)

Defect-Free, Size-Tunable Graphene for High-Performance Lithium Ion Battery ... These results propose that the as-prepared defect free graphene will bring significant advance of composite electrodes for high performance in electrochemical energy systems such as batteries, fuel cells, and capacitors. ...

Kwang Hyun Park; Dongju Lee; Jungmo Kim; Jongchan Song; Yong Min Lee; Hee-Tak Kim; Jung-Ki Park

2014-07-11T23:59:59.000Z

351

Topological description of the Stone-Wales defect formation energy in carbon nanotubes and graphene  

E-Print Network [OSTI]

Topological description of the Stone-Wales defect formation energy in carbon nanotubes and graphene,10,12,16,18,26 The reported values for SW defect formation energies both in carbon nanotubes and graphene8 energies depend largely on the nanotube radius, the orientation of the dislocation dipole, and, to a lesser

Daw, Murray S.

352

Heart Defects in Gulf Tuna Seen Tied to 2010 BP Oil Spill  

E-Print Network [OSTI]

Heart Defects in Gulf Tuna Seen Tied to 2010 BP Oil Spill By Jim Efstathiou Jr. Mar 25, 2014 12 of Mexico spill may have led to heart defects and premature death for tuna, researchers backed hearts may reduce swimming performance, jeopardizing a fish's survival. "The timing and location

Grosell, Martin

353

Electrochemical method for defect delineation in silicon-on-insulator wafers  

DOE Patents [OSTI]

An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

Guilinger, Terry R. (Albuquerque, NM); Jones, Howland D. T. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Medernach, John W. (Albuquerque, NM); Stevenson, Joel O. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

354

Principal component analysis based on wavelet characteristics applied to automated surface defect inspection  

Science Journals Connector (OSTI)

Automated visual inspection, a crucial manufacturing step, has been replacing the more time-consuming and less accurate human inspection. This research explores automated visual inspection of surface defects in a light-emitting diode (LED) chip. Commonly ... Keywords: hotelling statistic, machine vision system, principal component analysis, surface defect inspection, wavelet characteristics

Hong-Dar Lin; Chung-Yu Chung; Wan-Ting Lin

2008-04-01T23:59:59.000Z

355

DuoTracker: Tool Support for Software Defect Data Collection and Analysis  

E-Print Network [OSTI]

evaluate their process using either the Capability Maturity Model (CMM) [3] or the ISO 9001 standards [4 software processes. Keywords--software defects; software anomalies; defect classification; PSP; CMM; IS0-9001 is then compared against the quality models of CMM or IS0 9001. There are also improvement methods such as IDEAL [5

Dascalu, Sergiu

356

Inspection of surface defects in copper strip using multivariate statistical approach and SVM  

Science Journals Connector (OSTI)

The surface quality would directly influence the capability and quality of the final product, but there is little domestic research focused on surface defects inspection for copper strip based on automated visual inspection. According to the gradual change of intensity levels of copper strips surface defect, a defect detection algorithm is proposed using wavelet-based multivariate statistical analysis. First, the image is divided into several sub-images, namely statistical units, and then each unit is further decomposed into multiple wavelet processing units. Then each wavelet processing unit is decomposed by 1D db4 wavelet function. Then, multivariate statistics of Hotelling T˛ are applied to distinguish the existence of defects and classify the defects using support vector machine (SVM). During SVM design, the authors used cross-validation method to get the best parameters and then used the parameters to train and test the samples. Finally, the defect detection performance of the proposed approach is compared with the traditional method based on greyscale. Experimental results demonstrate that the proposed method has better performance on identification, especially its application in the ripple defects can achieve a 96.7% probability of detecting the existence of micro defects, which was poor in common algorithms.

Xue-Wu Zhang; Fang Gong; Li-Zhong Xu

2012-01-01T23:59:59.000Z

357

Recombination between a defective retrovirus and homologous sequences in host DNA: reversion by patch repair.  

Science Journals Connector (OSTI)

...transcriptase assay (16). Virus infections were car- ried out with the addition of polybrene...NIH/3T3 cells were infected with the defective virions as described above, but these...infected cell. Thus, we have shown that defective viruses can repair their mutations by...

P Schwartzberg; J Colicelli; S P Goff

1985-03-01T23:59:59.000Z

358

Multiscale finite element analysis of elastic wave scattering from localized defects  

Science Journals Connector (OSTI)

This paper investigates the use of a multiscale finite element approach to study the interaction between elastic waves and localized defects. The analysis of wave-defect interaction is of fundamental importance for the development of ultrasonic non-destructive ... Keywords: Elastic wave scattering, Finite element method, Multiscale analysis

F. Casadei, J. J. Rimoli, M. Ruzzene

2014-10-01T23:59:59.000Z

359

IDENTIFICATION OF IMPACTING FACTORS OF SURFACE DEFECTS IN HOT ROLLING PROCESSES USING MULTI-LEVEL REGRESSION  

E-Print Network [OSTI]

IDENTIFICATION OF IMPACTING FACTORS OF SURFACE DEFECTS IN HOT ROLLING PROCESSES USING MULTI. The result obtained can provide guidelines for root cause identification and quality improvement of hot products. Surface defects remain as a weakness or stress concentration site of the bulk material and hence

Zhou, Shiyu

360

Impurity-defect interaction in polycrystalline silicon for photovoltaic applications. The role of hydrogen  

E-Print Network [OSTI]

of the cell ? ii) Will the defects of the polycrystalline material hinder the photovoltaic properties..., leading also to a degradation of the efficiency of the photovoltaic cells ? iii) What would655 Impurity-defect interaction in polycrystalline silicon for photovoltaic applications. The role

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Ian Sommerville 2000 Software Engineering, 6th edition. Chapter 20 Slide 1 Defect testing  

E-Print Network [OSTI]

©Ian Sommerville 2000 Software Engineering, 6th edition. Chapter 20 Slide 1 Defect testing l Testing programs to establish the presence of system defects #12;©Ian Sommerville 2000 Software Engineering, 6th edition. Chapter 20 Slide 2 Objectives l To understand testing techniques that are geared

Scharff, Christelle

362

Stone-Wales defects in graphene and other planar sp2 -bonded materials  

E-Print Network [OSTI]

Stone-Wales defects in graphene and other planar sp2 -bonded materials Jie Ma,1,2,3 Dario Alfè,2 that the structure of the Stone-Wales SW defect in graphene is more complex than hitherto appreciated. Rather than of graphene and in so doing modify its chemical re- activity toward adsorbates, and likely impact upon its

Alfè, Dario

363

Understanding structural defects in lithium-rich layered oxide cathodes Karalee A. Jarvis,a  

E-Print Network [OSTI]

the required amounts of lithium, manganese, and nickel acetates were added to this solution. The molar ratioUnderstanding structural defects in lithium-rich layered oxide cathodes Karalee A. Jarvis, Accepted 31st March 2012 DOI: 10.1039/c2jm30575e Planar defects in lithium-rich layered oxides were

Ferreira, Paulo J.

364

Hydrogen interaction with point defects in tungsten K. Heinola, T. Ahlgren, K. Nordlund, and J. Keinonen  

E-Print Network [OSTI]

Hydrogen interaction with point defects in tungsten K. Heinola, T. Ahlgren, K. Nordlund, and J-principles calculations were used in determining the binding and trapping properties of hydrogen to point defects in tungsten. Hydrogen zero-point vibrations were taken into account. It was concluded that the monovacancy can

Nordlund, Kai

365

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Kelsey A. Whitesell*a  

E-Print Network [OSTI]

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Crystals Kelsey A. Whitesell to enhance performance of thin film solar cells because of their unique ability to control light. We show for light trapping in thin film photovoltaics. Keywords: photonic crystals, defect, silicon, solar cell

Atwater, Harry

366

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory  

SciTech Connect (OSTI)

We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels, and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement.

Szállás, A., E-mail: szallas.attila@wigner.mta.hu [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Szász, K. [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Institute of Physics, Eötvös University, Pázmány Péter sétány 1/A, H-1117 Budapest (Hungary); Trinh, X. T.; Son, N. T.; Janzén, E. [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Gali, A., E-mail: gali.adam@wigner.mta.hu [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest (Hungary)

2014-09-21T23:59:59.000Z

367

Dark defects in InGaAsP/InP double heterostructure lasers under accelerated aging  

SciTech Connect (OSTI)

Degradation modes due to dark defects under accelerated aging for InGaAsP/InP double heterostructure lasers are investigated by monitoring pulse threshold current, leak current, absorption coefficient, gain factor, and electroluminescence topograph. Most of the dark defects are dark spot defects (DSD's) and there are only few <100> dark line defects. At the initial stage of the degradation, these dark defects scarcely absorb the emitted light, and the reduction of gain factor causes the increase of pulse threshold current. After this stage, dark defects begin to act as absorber of the emitted light. The generation time of such DSD's strongly depends on the injected current density but only weakly on the junction temperature in the range of 25/sup 0/ to 250/sup 0/C. The activation energies for the generation time of the first dark spot defect and the growing speed of <100> dark line defects are estimated to be 0.16 and 0.2 eV, respectively.

Fukuda, M.; Wakita, K.; Iwane, G.

1983-03-01T23:59:59.000Z

368

First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen  

Science Journals Connector (OSTI)

Hydrogen-related defects and oxygen vacancies in silica are analyzed using first-principles density-functional calculations. Energetics, structures, charge-state levels, and hyperfine parameters are determined. These calculations identify the hydrogen bridge related to the E4? center as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown of gate oxides in transistors.

Peter E. Blöchl

2000-09-01T23:59:59.000Z

369

Exploring the interaction between lithium ion and defective graphene surface using dispersion corrected DFT studies  

SciTech Connect (OSTI)

To analyze the lithium ion interaction with realistic graphene surfaces, we carried out dispersion corrected DFT-D3 studies on graphene with common point defects and chemisorbed oxygen containing functional groups along with defect free graphene surface. Our study reveals that, the interaction between lithium ion (Li+) and graphene is mainly through the delocalized ? electron of pure graphene layer. However, the oxygen containing functional groups pose high adsorption energy for lithium ion due to the Li-O ionic bond formation. Similarly, the point defect groups interact with lithium ion through possible carbon dangling bonds and/or cation-? type interactions. Overall these defect sites render a preferential site for lithium ions compared with pure graphene layer. Based on these findings, the role of graphene surface defects in lithium battery performance were discussed.

Vijayakumar, M.; Hu, Jian Z.

2013-10-15T23:59:59.000Z

370

Thermal evolution of boron irradiation induced defects in predoped Si revealed by positron annihilation experiments  

SciTech Connect (OSTI)

The isochronal annealing behavior of high energy (25-72 MeV) boron ion irradiation induced defects in boron-doped silicon is monitored through measurements of positron lifetimes and three distinct defect-evolution stages are identified. The initial boron doping created a defect environment where positrons could sensitively annihilate with the boron electrons, suggesting boron-decorated Si monovacancies as potential trapping sites. The irradiation results in the dissolution of boron from these sites and positrons are then trapped by the empty divacancies of Si. Charge neutralization of divacancies through interaction with boron atoms leads to enhanced positron trapping in the initial stages of isochronal annealing. The divacancies start annealing above 673 K. However, a remarkable defect evolution stage due to the diffusion of the boron atoms beyond their initial depths of penetration is seen above 873 K and it leaves the sample with defects still present even at the highest annealing temperature 1273 K used in this work.

Nambissan, P. M. G.; Bhagwat, P. V.; Kurup, M. B. [Nuclear and Atomic Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Nuclear Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India)

2007-06-01T23:59:59.000Z

371

Delocalised oxygen as the origin of two-level defects in Josephson junctions  

E-Print Network [OSTI]

One of the key problems facing superconducting qubits and other Josephson junction devices is the decohering effects of bi-stable material defects. Although a variety of phenomenological models exist, the true microscopic origin of these defects remains elusive. For the first time we show that these defects may arise from delocalisation of the atomic position of the oxygen in the oxide forming the Josephson junction barrier. Using a microscopic model, we compute experimentally observable parameters for phase qubits. Such defects are charge neutral but have non-zero response to both applied electric field and strain. This may explain the observed long coherence time of two-level defects in the presence of charge noise, while still coupling to the junction electric field and substrate phonons.

Timothy C. DuBois; Manolo C. Per; Salvy P. Russo; Jared H. Cole

2012-06-12T23:59:59.000Z

372

Process for rapid detection of fratricidal defects on optics using Linescan Phase Differential Imaging  

SciTech Connect (OSTI)

Phase-defects on optics used in high-power lasers can cause light intensification leading to laser-induced damage of downstream optics. We introduce Linescan Phase Differential Imaging (LPDI), a large-area dark-field imaging technique able to identify phase-defects in the bulk or surface of large-aperture optics with a 67 second scan-time. Potential phase-defects in the LPDI images are indentified by an image analysis code and measured with a Phase Shifting Diffraction Interferometer (PSDI). The PSDI data is used to calculate the defects potential for downstream damage using an empirical laser-damage model that incorporates a laser propagation code. A ray tracing model of LPDI was developed to enhance our understanding of its phase-defect detection mechanism and reveal limitations.

Ravizza, F L; Nostrand, M C; Kegelmeyer, L M; Hawley, R A; Johnson, M A

2009-11-05T23:59:59.000Z

373

An Atom-Wide Antennae Created from Difference-Making Defects | Department  

Broader source: Energy.gov (indexed) [DOE]

An Atom-Wide Antennae Created from Difference-Making Defects An Atom-Wide Antennae Created from Difference-Making Defects An Atom-Wide Antennae Created from Difference-Making Defects March 7, 2012 - 3:35pm Addthis Take advantage of microwave microscopy, researchers were able to locate graphene islands on graphene. “Point defects” locally enhanced the graphene’s ability to transform waves of light into electronic signals. | Photo courtesy of Oak Ridge National Laboratory. Take advantage of microwave microscopy, researchers were able to locate graphene islands on graphene. "Point defects" locally enhanced the graphene's ability to transform waves of light into electronic signals. | Photo courtesy of Oak Ridge National Laboratory. Charles Rousseaux Charles Rousseaux Senior Writer, Office of Science

374

Inhibition of Repair of Radiation-Induced DNA Damage Enhances Gene Expression from Replication-Defective Adenoviral Vectors  

Science Journals Connector (OSTI)

...those related to increased expression of CAR and integrin are responsible for the enhanced...of gene expression from replication-defective adenoviral vectors: implications for...enhances gene expression from replication-defective adenoviral vectors. | Radiation has been...

Mohan Hingorani; Christine L. White; Andrew Merron; Inge Peerlinck; Martin E. Gore; Andrew Slade; Simon D. Scott; Christopher M. Nutting; Hardev S. Pandha; Alan A. Melcher; Richard G. Vile; Georges Vassaux; and Kevin J. Harrington

2008-12-01T23:59:59.000Z

375

Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy  

E-Print Network [OSTI]

Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy defect levels in absorber materials, and may be used to support the identification of remedial processing

Anderson, Timothy J.

376

Higgsless superconductivity from topological defects in compact BF terms  

E-Print Network [OSTI]

We present a new Higgsless model of superconductivity, inspired from anyon superconductivity but P- and T-invariant and generalizable to any dimension. While the original anyon superconductivity mechanism was based on incompressible quantum Hall fluids as average field states, our mechanism involves topological insulators as average field states. In D space dimensions it involves a (D-1)-form fictitious pseudovector gauge field which originates from the condensation of topological defects in compact low-energy effective BF theories. In the average field approximation, the corresponding uniform emergent charge creates a gap for the (D-2)-dimensional branes via the Magnus force, the dual of the Lorentz force. One particular combination of intrinsic and emergent charge fluctuations that leaves the total charge distribution invariant constitutes an isolated gapless mode leading to superfluidity. The remaining massive modes organise themselves into a D-dimensional charged, massive vector. There is no massive Higgs scalar as there is no local order parameter. When electromagnetism is switched on, the photon acquires mass by the topological BF mechanism. Although the charge of the gapless mode (2) and the topological order (4) are the same as those of the standard Higgs model, the two models of superconductivity are clearly different since the origins of the gap, reflected in the high-energy sectors are totally different. In 2D this type of superconductivity is explicitly realized as global superconductivity in Josephson junction arrays. In 3D this model predicts a possible phase transition from topological insulators to Higgsless superconductors.

M. Cristina Diamantini; Carlo A. Trugenberger

2014-08-29T23:59:59.000Z

377

Quantitative description of microstructure defects in hexagonal boron nitrides using X-ray diffraction analysis  

SciTech Connect (OSTI)

A routine for simultaneous quantification of turbostratic disorder, amount of puckering and the dislocation and stacking fault density in hexagonal materials was proposed and tested on boron nitride powder samples that were synthesised using different methods. The routine allows the individual microstructure defects to be recognised according to their effect on the anisotropy of the X-ray diffraction line broadening. For quantification of the microstructure defects, the total line broadening is regarded as a linear combination of the contributions from the particular defects. The total line broadening is obtained from the line profile fitting. As testing material, graphitic boron nitride (h-BN) was employed in the form of hot-isostatically pressed h-BN, pyrolytic h-BN or a h-BN, which was chemically vapour deposited at a low temperature. The kind of the dominant microstructure defects determined from the broadening of the X-ray diffraction lines was verified by high resolution transmission electron microscopy. Their amount was attempted to be verified by alternative methods. - Highlights: • Reliable method for quantification of microstructure defects in BN was suggested. • The method is based on the analysis of anisotropic XRD line broadening. • This XRD line broadening is unique and characteristic of the respective defect. • Thus, the quantification of coexistent microstructure defects is possible. • The method was tested on hexagonal BN, which was produced by different techniques.

Schimpf, C., E-mail: schimpf@iww.tu-freiberg.de; Motylenko, M.; Rafaja, D.

2013-12-15T23:59:59.000Z

378

Defective posttranslational processing activates the tyrosine kinase encoded by the MET proto-oncogene (hepatocyte growth factor receptor).  

Science Journals Connector (OSTI)

...treatment of intact cells. That a defective posttranslational mechanism...compartment is functionally defective in LoVo cells. Since a small...compartment is either incompletely defective or an alternative pathway exists...phosphorylated in the colon car- cinoma line studied. This...

A Mondino; S Giordano; P M Comoglio

1991-12-01T23:59:59.000Z

379

Assembly of 60S ribosomal subunits is perturbed in temperature-sensitive yeast mutants defective in ribosomal protein L16.  

Science Journals Connector (OSTI)

...temperature-sensitive yeast mutants defective in ribosomal protein L16...RIBOSOME ASSEMBLY MUTANTS DEFECTIVE FOR L16 5689 sis of the 35S...temperature (24). Strains car- rying mutations in the PRTI...assembled before the shift are not defective for function in translation...

M Moritz; B A Pulaski; J L Woolford Jr

1991-11-01T23:59:59.000Z

380

Four Moloney murine leukemia virus-infected rat cell clones producing replication-defective particles: protein and nucleic acid analyses.  

Science Journals Connector (OSTI)

...clones producing replication-defective particles: protein and nucleic...below. Viral proteins in the defective particles were labeled with...Fig. 3, lane B), the defective particles produced by the NX...respective marker proteins, car- bonic anhydrase (30K) and...

F K Yoshimura; J M Yamamura

1981-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

A mutant of Escherichia coli defective in penicillin-binding protein 5 and lacking D-alanine carboxypeptidase IA.  

Science Journals Connector (OSTI)

...preparation of D-alanrne car- boxypeptidase IA of...IA, because a mutant defective in D-alanine carbox...both activities were defective or both were normal...residual D-alanine car- boxypeptidase IA activity...and to obtain a mutant defective in PBP-6 are in progress...

Y Nishimura; H Suzuki; Y Hirota; J T Park

1980-07-01T23:59:59.000Z

382

Isolation and partial characterization of Rhodopseudomonas sphaeroides mutants defective in the regulation of ribulose bisphosphate carboxylase/oxygenase.  

Science Journals Connector (OSTI)

...Rhodopseudomonas sphaeroides Mutants Defective in the Regulation of Ribulose...Rhodopseudomonas sphaeroides defective in the derepres- sion of the...indicated that mutants were defective in the regulation of only one...pJB4JI, a "suicide" plasmid car- rying TnS (1), and pRK340...

K E Weaver; F R Tabita

1983-11-01T23:59:59.000Z

383

Cisplatin-resistant cancer cells are defective in the 26S proteasome: applications in cancer gene therapy  

Science Journals Connector (OSTI)

...Cisplatin-resistant cancer cells are defective in the 26S proteasome: applications...was excluded by analyzing for CAR receptor, alphavbeta3 and...19S and 20S subunits might be defective in 2008/C13* cells. Subsequent...CDDP-resistant tumor cells are defective in 26S proteasome and are sensitive...

Began Gopalan; Carlos Rached; Sunil Chada; and Rajagopal Ramesh

2006-04-15T23:59:59.000Z

384

Sites of copy choice replication involved in generation of vesicular stomatitis virus defective-interfering particle RNAs.  

Science Journals Connector (OSTI)

...Replication DNA Restriction Enzymes Defective Viruses genetics Genes, Viral...Vesicular Stomatitis Virus Defective-Interfering Particle RNAs...Celter, Diur liali,n Nor thl Car olina i 277102 Received 27...model for the generation of defective interfering (DI) particles...

E Meier; G G Harmison; J D Keene; M Schubert

1984-08-01T23:59:59.000Z

385

Transformation-defective mutant of adenovirus type 5 containing a single altered E1a mRNA species.  

Science Journals Connector (OSTI)

...H5in500 has been found to be defective in viral DNA replication and...acid residues (6). d1311 is defective for viral DNA replication...and yet the removal of the car- boxy-terminal residues...VIROL. TRANSFORMATION-DEFECTIVE MUTANT OF Ad5 663 transformation...

L R Carlock; N C Jones

1981-12-01T23:59:59.000Z

386

Genetic and biochemical analysis of transformation-competent, replication-defective simian virus 40 large T antigen mutants.  

Science Journals Connector (OSTI)

...transformation-competent, replication-defective simian virus 40 large T antigen...antigen which is replica- tion defective; it contains the lysine-to-glutamic...exhibited tI replication-defective phenotype in marker res ments...C8 T antigen lacks the 49 car nal amino acids and has a predicted...

M M Manos; Y Gluzman

1985-01-01T23:59:59.000Z

387

Society Evaluation of point defect concentrations in B2-FeAl intermetallic compound  

E-Print Network [OSTI]

Thermal defects are studied for three compositions (49, 50 and 52 at.%Fe) of the intermetallic compound FeAl with B2 structure. Magnetic measurements are used to determine the thermal defect concentrations. These concentrations are determined from fitting the experimental curves of magnetic susceptibility, obtained during an isochronal annealing after a quench. Next we have evaluated theoretically the concentrations of different point defects that exist in this compound. The used model is based in the Bragg-Williams approximation assuming the nearest-neighbour interaction. The calculated concentrations describe well the experimental values. I.

S. Zaroual; O. Sassi; J. Aride; J. Bernardini; G. Moya; Supérieure Takaddoum; B. P. Rabat-morocco

2001-01-01T23:59:59.000Z

388

Defect motion and lattice pinning barriers in Josephson-junction ladders  

SciTech Connect (OSTI)

We study the motion of domain wall defects in a fully frustrated Josephson-junction ladder system, driven by small applied currents. For small system sizes, the energy barrier E{sub B} to the defect motion is computed analytically via symmetry and topological considerations. More generally, we perform numerical simulations directly on the equations of motion, based on the resistively-shunted junction model, to study the dynamics of defects, varying the system size. Coherent motion of domain walls is observed for large system sizes. In the thermodynamical limit, we find E{sub B}=0.1827 in units of the Josephson coupling energy.

Kang, H.; Lim, Jong Soo [Department of Physics and Center for Theoretical Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Fortin, J.-Y. [Laboratoire de Physique Theorique, Universite Louis Pasteur, 67084 Strasbourg (France); Choi, J. [Department of Physics, Keimyung University, Daegu 704-701 (Korea, Republic of); Choi, M. Y. [Department of Physics and Center for Theoretical Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Korea Institute for Advanced Study, Seoul 130-722 (Korea, Republic of)

2006-01-01T23:59:59.000Z

389

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample  

SciTech Connect (OSTI)

We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ?97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications.

Lesik, M.; Roch, J.-F. [Laboratoire Aimé Cotton, CNRS, Université Paris-Sud and Ecole Normale Supérieure de Cachan, 91405 Orsay (France); Tetienne, J.-P.; Jacques, V., E-mail: vjacques@ens-cachan.fr [Laboratoire Aimé Cotton, CNRS, Université Paris-Sud and Ecole Normale Supérieure de Cachan, 91405 Orsay (France); Laboratoire de Photonique Quantique et Moléculaire, Ecole Normale Supérieure de Cachan and CNRS UMR 8537, 94235 Cachan (France); Tallaire, A., E-mail: alexandre.tallaire@lspm.cnrs.fr; Achard, J.; Mille, V.; Gicquel, A. [Laboratoire des Sciences des Procédés et des Matériaux, CNRS and Université Paris 13, 93340 Villetaneuse (France)

2014-03-17T23:59:59.000Z

390

Impact of point defects on electronic structure in Y2Ti2O7  

SciTech Connect (OSTI)

With many technologies and applications downscaling to nanometer dimensions, the influence of single point defects on electronic structure has shown increasingly profound impact on optical and electrical properties, and advancing fundamental understanding is critical to defect engineering and control of materials properties. In the present study, first-principles calculations based on density functional theory (DFT) are carried out to study the effects of Ti point defects on the electronic structure of Y2Ti2O7. In the literature, it has been demonstrated that conventional DFT tends to produce delocalized holes and electrons in defective oxide materials due to insufficient cancellation of the self-interaction energy and underestimation of the band gap, which results in an incorrect description of the electronic structure of the system. In an effort to better understand the accuracy of DFT in describing the behavior of Y2Ti2O7 with point defects, the calculated results obtained from using DFT and DFT+U methods are compared, including the geometrical distortion, the localization of the defect states and the position of the defect levels in the band gap. Using DFT, distorted geometries around the Ti vacancy and interstitial are found, along with localized oxygen holes and Ti electrons, both of which compare well with the DFT+U results, suggesting that the conventional DFT can be used to describe the localization of the Ti defects in Y2Ti2O7. One major difference in the DFT and DFT+U calculations is the energy position of the defect levels, for which DFT+U results in the states positioned deep in the band gap. Since the DFT+U method suffers from the dependence of the results on the empirical parameter U and no experimental results on the energy position of the defect states are available to tune this U value, care must be taken in applying DFT+U to electronic structure calculations of Y2Ti2O7 with point defects. Based on the DFT method, the most preferred charge state is determined by the formation energies for charged point defects. Moving the Fermi level across the band gap has slight effects on the charge state, and the Ti vacancy and interstitial are found to be in -4 and +4 charge states, respectively.

Xiao, Haiyan [University of Tennessee, Knoxville (UTK); Zhang, Yanwen [ORNL; Weber, William J [ORNL

2012-01-01T23:59:59.000Z

391

Impact of Point Defects on Electronic Structure in Y?Ti?O?  

SciTech Connect (OSTI)

With many technologies and applications downscaling to nanometer dimensions, the influence of single point defects on electronic structure has shown an increasingly profound impact on optical and electrical properties, and advancing fundamental understanding is critical to defect engineering and control of materials properties. In the present study, first-principles calculations based on density functional theory (DFT) are carried out to study the effects of Ti point defects on the electronic structure of Y?Ti?O?. In the literature, it has been demonstrated that conventional DFT tends to produce delocalized holes and electrons in defective oxide materials due to insufficient cancellation of the self-interaction energy and underestimation of the band gap, which results in an incorrect description of the electronic structure of the system. In an effort to better understand the accuracy of DFT in describing the behavior of Y?Ti?O? with point defects, the calculated results obtained from DFT and DFT+U methods are compared, including the geometrical distortion, the localization of the defect states and the position of the defect levels in the band gap. Using DFT, distorted geometries around the Ti vacancy and interstitial are found, along with localized oxygen holes and Ti electrons, both of which compare well with the DFT+U results, suggesting that the conventional DFT can be used to describe the localization of the Ti defects in Y?Ti?O?. One major difference in the DFT and DFT+U calculations is the energy position of the defect levels, for which DFT+U results in the states positioned deep in the band gap. Since the DFT+U method suffers from the dependence of the results on the empirical parameter U and no experimental results on the energy position of the defect states are available to tune this U value, care must be taken in applying DFT+U to electronic structure calculations of Y?Ti?O? with point defects. Based on the DFT method, the most preferred charge state is determined by the formation energies for charged point defects. Moving the Fermi level across the band gap has slight effects on the charge state, and the Ti vacancy and interstitial are found to be in 24 and +4 charge states, respectively.

Xiao, Haiyan Y.; Zhang, Yanwen; Weber, William J.

2012-06-13T23:59:59.000Z

392

Structural defects in GaN revealed by Transmission Electron Microscopy  

SciTech Connect (OSTI)

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Liliental-Weber, Zuzanna

2014-04-18T23:59:59.000Z

393

Tuning the Optical Properties of Nanoscale Materials on Surfaces Through Controlled Exchange Reactions on Cadmium Selenide Quantum Dots and Patterning of Gold and QD Nanoparticle Arrays  

E-Print Network [OSTI]

combination between the use of a self-assembled monolayer (SAM) molecular linker and PS mask fabricated via polydimethylsiloxane (PDMS) micro-stamp was also discussed briefly. Particle lithography is a versatile method and can be used to fabricate pattern...

Pravitasari, Arika

2013-11-11T23:59:59.000Z

394

A study of local and extended migration of H and defects in a-Si by molecular dynamics simulations  

SciTech Connect (OSTI)

The author reports on extensive molecular dynamics (MD) simulations on a-Si:H for up to 5 Ps using the ab initio code of Sankey and Drabold. The supercells contain about 70 atoms and only one defect in order to minimize defect-defect interaction. Simulations on supercell samples that originally contain one bond centered (BC) H in an otherwise defect free sample exhibit BC to BC diffusion as in c-Si. However, the author also observed localized motion of defects and H atoms on a very fast time scale that probably has been observed in several experiments.

Fedders, P.A. [Washington Univ., St. Louis, MO (United States). Dept. of Physics

1996-12-31T23:59:59.000Z

395

Correlation between nuclear response and defects in CZT  

SciTech Connect (OSTI)

Vertical high pressure Bridgman (VHPB) was considered until now to be the most successful crystal growth method to produce Cd{sub 1{minus}x}Zn{sub x}Te (CZT), (0.04 < x < 0.24), for X- and gamma-ray detector crystals. Recently Horizontal Bridgman (HB) Cd{sub 1{minus}x}Zn{sub x}Te crystals produced by IMARAD Co. have also been successfully fabricated into nuclear spectroscopic radiation detectors. In view of the database of many years' study of the electrical properties of VHPB CZT grown and obtained from various sources, the authors also studied the HB CZT crystals in order to compare the defects present in both different kinds of crystals grown by different methods. The VHB-grown samples were examined using thermoelectric emission spectroscopy (TEES), X- and gamma ray spectroscopy and laser induced transient charge technique (TCT). The surface and the bulk crystalline homogeneity were mapped using triaxial double crystal x-ray diffraction (TADXRD) and infrared transmission spectroscopy (IR). They have found a correlation between crystallinity, IR transmission microstructure and trapping times. Spectrometer grade VHPB CZT crystals exhibit trapping times of 20 {micro}s for electrons and 7 {micro}s for holes, however, regions, which were opaque to IR transmission, had trapping times shorter by one order of magnitude. The trapping times of HB CZT for electrons, were 10--15 {micro}s. A similar trend has been observed on VHPB CZT crystals with poor crystallinity. The HB CZT crystals that they measured in this study had a crystallinity that was inferior to that of the best spectroscopic grade VHPB crystals.

H. Hermon; M. Schieber; R. B. James; E. Lee; E. Cross; M. Goorsky; T. Lam; T. E. Schlesinger; M. Greaves

1999-07-19T23:59:59.000Z

396

Joint Summer School on "The Evolution and Impact of Microstructural Defects  

Office of Science (SC) Website

Joint Summer School on "The Evolution and Impact Joint Summer School on "The Evolution and Impact of Microstructural Defects on In-Reactor Material Response" Energy Frontier Research Centers (EFRCs) EFRCs Home Centers Research Science Highlights News & Events EFRC News EFRC Events DOE Announcements Publications Contact BES Home 11.08.10 Joint Summer School on "The Evolution and Impact of Microstructural Defects on In-Reactor Material Response" Print Text Size: A A A Subscribe FeedbackShare Page June 6 - 10, 2011 :: The International Summer School, "The Evolution and Impact of Microstructural Defects on In-Reactor Material Response", at Idaho National Laboratories will be sponsored by the Center for Materials Science of Nuclear Fuel (Idaho National Laboratory), the Center for Defect

397

Hydrogen effects on the point defect spectrum in Fe-C alloys  

E-Print Network [OSTI]

As part of a multi-scale approach for modeling hydrogen embrittlement in hardened steels we have investigated, employing density functional theory methods, the stability and concentrations of the point defect clusters ...

Monasterio Velásquez, Paul Rene

2008-01-01T23:59:59.000Z

398

E-Print Network 3.0 - aging-related chromatin defects Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

temperature... Research Fund tion at ARS elements in cells carrying defective ORC2Lincoln's Inn Fields and ORC5 (Fox et al... United Kingdom yeast silent mating-type...

399

Graphene for reducing bubble defects and enhancing mechanical properties of graphene/cellulose acetate composite films  

Science Journals Connector (OSTI)

In this study, we have demonstrated a strategy by which graphene was used to reduce the bubble defects and enhance the mechanical properties in graphene/cellulose acetate (Gr/CA) composite films. Mono- and multil...

Lei Liu; Zhigang Shen; Shuaishuai Liang; Min Yi…

2014-01-01T23:59:59.000Z

400

Effects of Point Defects and Impurities on Kinetics in NaAlH4  

Broader source: Energy.gov [DOE]

A presentation showing that point defects play an important role in the kinetics of NaAlH4 including vacancies and interstitials consistent with observed effects of Ti.

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Integrated approaches to elucidate the genetic architecture of congenital heart defects  

E-Print Network [OSTI]

Congenital heart defects (CHD) are structural anomalies affecting the heart, are found in 1% of the population and arise during early stages of embryo development. Without surgical and medical interventions, most of the severe CHD cases would...

Al Turki, Saeed

2014-02-04T23:59:59.000Z

402

Strangulated hernia through a defect in the broad ligament: a sheep in wolf’s clothing  

Science Journals Connector (OSTI)

Small bowel obstruction due to an internal hernia is an uncommon finding and, when caused by a defect in the broad ligament, it is exceptionally rare. This condition should be considered when evaluating all fe...

R. C. Langan; K. Holzman; M. Coblentz

2012-08-01T23:59:59.000Z

403

Detection of defects in FRP-reinforced concrete with the acoustic-laser vibrometry method  

E-Print Network [OSTI]

Fiber-reinforced polymer (FRP) strengthening and retrofitting of concrete structural elements has become increasingly popular for civil infrastructure systems. When defects occur in FRP-reinforced concrete elements at the ...

Chen, Justin Gejune

2013-01-01T23:59:59.000Z

404

Evaluation and Visualization of Surface Defects — a Numerical and Experimental Study on Sheet?Metal Parts  

Science Journals Connector (OSTI)

The ability to predict surface defects in outer panels is of vital importance in the automotive industry especially for brands in the premium car segment. Today measures to prevent these defects can not be taken until a test part has been manufactured which requires a great deal of time and expense. The decision as to whether a certain surface is of acceptable quality or not is based on subjective evaluation. It is quite possible to detect a defect by measurement but it is not possible to correlate measured defects and the subjective evaluation. If all results could be based on the same criteria it would be possible to compare a surface by both FE simulations experiments and subjective evaluation with the same result.

A. Andersson

2005-01-01T23:59:59.000Z

405

Analysis, Simulation and Prediction of Cosmetic Defects on Automotive External Panel  

Science Journals Connector (OSTI)

The first feeling of quality for a vehicle is linked to its perfect appearance. This has a major impact on the reputation of a car manufacturer. Cosmetic defects are thus more and more taken into account in the process design. Qualifying a part as good or bad from the cosmetic point of view is mainly subjective: the part aspect is considered acceptable if no defect is visible on the vehicle by the final customer. Cosmetic defects that appear during sheet metal forming are checked by visual inspection in light inspection rooms stoning or with optical or mechanical sensors or feelers. A lack of cosmetic defect prediction before part production leads to the need for corrective actions production delays and generates additional costs.

A. Le Port; S. Thuillier; C. Borot; J. Charbonneaux; Aethra Automotive Systems

2011-01-01T23:59:59.000Z

406

Investigation on Wave Propagation Characteristics in Plates and Pipes for Identification of Structural Defect Locations  

E-Print Network [OSTI]

For successful identification of structural defects in plates and pipes, it is essential to understand structural wave propagation characteristics such as dispersion relations. Analytical approaches to identify the dispersion relations...

Han, Je Heon

2013-07-31T23:59:59.000Z

407

Laser-Directed Hierarchical Assembly of Liquid Crystal Defects and Control of Optical Phase Singularities  

SciTech Connect (OSTI)

Topological defect lines are ubiquitous and important in a wide variety of fascinating phenomena and theories in many fields ranging from materials science to early-universe cosmology, and to engineering of laser beams. However, they are typically hard to control in a reliable manner. Here we describe facile erasable 'optical drawing' of self-assembled defect clusters in liquid crystals. These quadrupolar defect clusters, stabilized by the medium's chirality and the tendency to form twisted configurations, are shaped into arbitrary two-dimensional patterns, including reconfigurable phase gratings capable of generating and controlling optical phase singularities in laser beams. Our findings bridge the studies of defects in condensed matter physics and optics and may enable applications in data storage, singular optics, displays, electro-optic devices, diffraction gratings, as well as in both optically- and electrically-addressed pixel-free spatial light modulators.

Ackerman, P. J.; Qi, Z. Y.; Lin, Y. H.; Twombly, C. W.; Laviada, M. J.; Lansac, Y.; Smalyukh, I. I.

2012-06-07T23:59:59.000Z

408

Image contrast range for detection of enamel defects using a digital dental imaging system  

Science Journals Connector (OSTI)

The purpose of this study was to quantitatively assess the acceptable range of image contrast for the detection of enamel defects by adjusting the contrast and brightness of a digital dental imaging system. Ex...

Hiromi Kitagawa D.D.S.; Ph.D.; Mamoru Wakoh D.D.S.; Ph.D.…

1999-12-01T23:59:59.000Z

409

An analytical study of rail grinding optimization for rail-head fatigue defect prevention  

E-Print Network [OSTI]

and increased train traffic on the remaining routes. These changes in railroad industry practice have caused an increase in the rate of occurrence of rail head fatigue defects, one potential cause of train derailment. The primary form of maintenance employed...

Jones, Scott Laurence

1997-01-01T23:59:59.000Z

410

Ab initio calculations on magnetism induced by composite defects in magnesium oxide  

SciTech Connect (OSTI)

The local magnetic state induced by the composite defects, composed of an oxygen vacancy and a nitrogen substituting oxygen, in magnesium oxide has been studied by using ab initio calculation based on density functional theory. The calculated results show that local magnetic moment can be induced by the composite defects around the oxygen vacancy, when the exchange split of the oxygen vacancy is enhanced either by the hybridization between the N-p and nearest neighbor O-p orbitals or by applying on-site Coulomb repulsion (U) and exchange interaction (J). We show that the magnetic state induced by the composite defect is energetically more stable than the non-magnetic state. In addition, we show that the U and J applied on the p-orbitals of N and O atoms may significantly impact the calculated magnetic state of the composite defect, resulting in magnetic state for a configuration that is non-magnetic by generalized gradient approximation.

Zhang, Yao-Fang [Department of Physics, Tianjin Polytechnic University, Tianjin 300384 (China); College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Feng, Min [School of Physics, Nankai University, Tianjin 300071 (China); Shao, Bin [Department of Physics, Tsinghua University, Beijing 100084 (China); Lu, Yuan; Zuo, Xu, E-mail: xzuonku@gmail.com [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Liu, Hong [Office of International Academic Exchanges, Nankai University, Tianjin 300071 (China)

2014-05-07T23:59:59.000Z

411

Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence  

Science Journals Connector (OSTI)

Results obtained in development of physical foundations of ion implantation technology for fabrication of silicon light- ... . The development of the concept of defect engineering in the technology of semiconduct...

N. A. Sobolev

2010-01-01T23:59:59.000Z

412

Graphene flakes with defective edge terminations: Universal and topological aspects, and one-dimensional quantum behavior  

E-Print Network [OSTI]

Graphene flakes with defective edge terminations: Universal and topological aspects, and one graphene nanoflakes with reconstructed zigzag edges, where a succes- sion of pentagons and heptagons these spectra. The electronic spectra of trigonal graphene nanoflakes with reczag edge terminations exhibit

Yannouleas, Constantine

413

Real-Time Tracking and Shape Analysis of Atrial Septal Defects in 3D Echocardiography1  

E-Print Network [OSTI]

heart procedures. Our application assists pediatric atrial septal defect (ASD) closure techniques using.G.L., R.D.H.); National Institutes of Health, Diag- nostic Radiology Department, Bethesda, MD (M

414

Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint  

SciTech Connect (OSTI)

Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

Yan, F.; Johnston, S.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

2011-07-01T23:59:59.000Z

415

Boron-Silicon complex defects in GaAs: An ab initio study  

Science Journals Connector (OSTI)

First principles calculations have been performed to investigate defect equilibria of the silicon–boron pair complex (Si–B) in a GaAs matrix. For several charge states the formation energies were evaluated within the Car–Parrinello scheme considering cation and anion substitutional site defects. The calculations including the full relaxation of all ionic coordinates investigate native defects and isolated substitutional silicon (Si) and boron (B) impurities. The obtained formation energies are used to calculate the impurity concentration for different growth conditions. These results can be used to estimate the effect of different thermal profiles on the distribution and electrical state of Si and B defects which is interesting for classical process simulations.

R. Leitsmann; F. Chicker; Ph. Plänitz; C. Radehaus; U. Kretzer; M. Scheffer-Czygan; S. Eichler

2011-01-01T23:59:59.000Z

416

Classification and Reconstruction of Defects by Combined Acoustical Holography and Line-Saft  

Science Journals Connector (OSTI)

For the purpose of defect location, sizing and characterization a couple of analyzing nondestructive testing methods have been developed. Here a data acquisition system is presented which is based upon data co...

V. Schmitz; W. Müller; G. Schäfer

1983-01-01T23:59:59.000Z

417

Analysis of a Defected Dissimilar Metal Weld in a PWR Power Plant  

SciTech Connect (OSTI)

During the refueling outage 2000, inspections of the RC-loops of one of the Ringhals PWR-units, Ringhals 4, indicated surface breaking defects in the axial direction of the piping in a dissimilar weld between the Low alloy steel nozzle and the stainless safe end in the hot leg. In addition some indications were found that there were embedded defects in the weld material. These defects were judged as being insignificant to the structural integrity. The welds were inspected in 1993 with the result that no significant indications were found. The weld it self is a double U weld, where the thickness of the material is ideally 79,5 mm. Its is constructed by Inconel 182 weld material. At the nozzle a buttering was applied, also by Inconel 182. The In-service inspection, ISI, of the object indicated four axial defects, 9-16 mm deep. During fabrication, the areas where the defects are found were repaired at least three times, onto a maximum depth of 32 mm. To evaluate the defects, 6 boat samples from the four axial defects were cut from the perimeter and shipped to the hot-cell laboratory for further examination. This examination revealed that the two deep defects had been under sized by the ISI outside the requirement set by the inspection tolerances, while the two shallow defects were over sized, but within the tolerances of the detection system. When studying the safety case it became evident that there were several missing elements in the way this problems is handled with respect to the Swedish safety evaluation code. Among these the most notable at the beginning was the absence of reliable fracture mechanical data such as crack growth laws and fracture toughness at elevated temperature. Both these questions were handled by the project. The fracture mechanical evaluation has focused on a fit for service principal. Thus defects both in the unaffected zones and the disturbed zones, boat sample cutouts, of the weld have been analyzed. With reference to the Swedish safety evaluation system in accordance to the regulatory demands, a safety evaluation was performed using the R6-method. The failure assessment diagram is modified by the addition of the ASME XI safety factors both for limit load analysis and fracture assessment. This results in a very high conservatism since the secondary stresses such as residual stresses are high in the area. In order to quantify this effect an analysis in accordance to ASME IWB-3640, App. C was performed. This analysis provides the decision-makers with a sensitivity study; important to have to value the real risk of any missed defects in the area. (authors)

Efsing, P. [Barseback Kraft AB, P.O. Box 524, Loddekopinge SE-246 25 (Sweden); Lagerstrom, J. [Vattenfall AB, Ringhals, 430 22 Vaeroebacka (Sweden)

2002-07-01T23:59:59.000Z

418

Point Defects in CdZnTe Crystals Grown by Different Techniques  

SciTech Connect (OSTI)

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

R Gul; A Bolotnikov; H Kim; R Rodriguez; K Keeter; Z Li; G Gu; R James

2011-12-31T23:59:59.000Z

419

Point Defects in CdZnTe Crystals Grown by Different Techniques  

SciTech Connect (OSTI)

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

Gul, R.; Bolotnikov, A.; Kim, H.K.; Rodriguez, R.; Keeter, K.; Li, Z.; Gu, G.; and James, R.B.

2011-02-02T23:59:59.000Z

420

Electron spin resonance study of proton-irradiation-induced defects in graphite  

SciTech Connect (OSTI)

Electron spin resonance measurements of proton-irradiated graphite have revealed detailed nature of proton-irradiation-induced defects. Our results indicate that proton-irradiation creates confined defect regions of a metallic island surrounded by an insulating magnetic region which ''isolates'' the metallic island inside from the metallic graphite background outside. We have thus come up with a picture of phase separation in proton-irradiated graphite comprising three regions of distinct electrical and magnetic properties.

Won Lee, Kyu; Kweon, H.; Kweon, J. J.; Lee, Cheol Eui [Department of Physics and Institute for Nano Science, Korea University, Seoul 136-713 (Korea, Republic of)

2010-02-15T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Effects of time constraint and percent defective on visual inspection performance  

E-Print Network [OSTI]

EFFECTS OF TIME CONSTRAINT AND PERCENT DEFECTIVE ON VISUAL INSPECTION PERFORMANCE A Thesis by WALTER EDGAR GILMORE II Submitted to the Graduate College of Texas ABM University in partial fulfillment of the requirement for the degree MASTER... OF SCIENCE August 1982 Major Subject: Industrial Engineering EFFECTS OF TIME CONSTRAINT AND PERCENT DEFECTIVE ON VISUAL INSPECTION PERFORMANCE A Thesis by WALTER EDGAR GILMORE II Approved as to sty1e and content by: Chairman of Committ e) (Memb r...

Gilmore, Walter Edgar

2012-06-07T23:59:59.000Z

422

Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon  

Science Journals Connector (OSTI)

We analyze the core structure of the carrier-lifetime-reducing boron- and oxygen-related metastable defect center in crystalline silicon by measuring the correlation of the defect concentration with the boron and the oxygen contents on a large number of different silicon materials. The experimental results indicate that the defect is composed of one substitutional boron and two interstitial oxygen atoms. Formation and annihilation of the metastable boron-oxygen complex are found to be thermally activated processes, characterized by two strongly differing activation energies. Measurements of the defect generation rate as a function of light intensity show that the defect generation rate increases proportionally with light intensity below 1 mW/cm2 and saturates at higher intensities. All experimental results can be consistently explained using a defect reaction model based on fast-diffusing oxygen dimers (O2i), which are captured by substitutional boron (Bs) to form a metastable Bs-O2i complex. Based on this model, new strategies for an effective reduction of the light degradation of solar cells made on oxygen-rich silicon materials are derived. The model also explains why no lifetime degradation is observed in aluminum-, gallium-, and indium-doped oxygen-rich silicon.

Jan Schmidt and Karsten Bothe

2004-01-22T23:59:59.000Z

423

Evaluation of the association between birth defects and exposure to ambient vinyl chloride  

SciTech Connect (OSTI)

Birth defects incidence for infants born to residents of Shawinigan, Canada in 1966-1979 were significantly higher than in three comparison communities. Since there has been a vinyl chloride polymerization plant in this town since 1943 from which ten cases of angiosarcoma of the liver have been identified, this study explores the possible association between exposure to vinyl chloride monomer (VCM) in ambient air and the occurrence of birth defects in the community. The excess of birth defects fluctuated seasonally in a way that corresponded to changes in VCM concentration in the environment. Mothers who gave birth to malformed children were younger on average in Shawinigan than in the comparison communities. However, there was no excess of still-births in Shawinigan. The excess in birth defects involved most organ systems, and variation in birth-defect rates among school districts could not be accounted for by estimates of VCM in the atmosphere. The occupational and residential histories of parents who gave birth to malformed infants were compared with those of parents of normal infants. The two groups did not differ in occupational exposure or closeness of residence to the vinyl chloride polymerization plant. Some descriptive data from this study raised the hypothesis of an association between VCM in the air and birth defects in the exposed community, but as a whole, within the sample size available, such an association could not be substantiated.

Theriault, G.; Iturra, H.; Gingras, S.

1983-06-01T23:59:59.000Z

424

Evaluation on defect in the weld of stainless steel materials using nondestructive technique  

Science Journals Connector (OSTI)

Abstract The objective of this study is to evaluate the elastic wave's characteristic on the crack in the weld of stainless steel materials using guided wave and acoustic emission, nondestructive tests. The stainless steel is expected as candidate of structural piping material under high temperature condition in nuclear fusion instrument, and a tungsten inert gas (TIG) weld technique was applied for making its jointing. The defect size of 20 mm was induced in the weld material. The guided wave, one of elastic waves, can propagate through very long pipe, and easily change to lots of modes by the defects in the structure. By analyzing the relationship between the mode conversion and the defects we can evaluate existing of the defects in weld material. In present study Nd-YAG laser was used to excite the guided wave by non-contact method, and AE technique was also used to clarify the mode conversion of guided wave by defect because lots of AE parameters of energy, count and amplitude can give more chances for analysis of mode conversion. The optimal AE parameters for the evaluation of the defects in weld zone using laser guided wave were derived.

Jin Kyung Lee; Dong Su Bae; Sang Pill Lee; Joon Hyun Lee

2014-01-01T23:59:59.000Z

425

3D Simulation of Missing Pellet Surface Defects in Light Water Reactor Fuel Rods  

SciTech Connect (OSTI)

The cladding on light water reactor (LWR) fuel rods provides a stable enclosure for fuel pellets and serves as a first barrier against fission product release. Consequently, it is important to design fuel to prevent cladding failure due to mechanical interactions with fuel pellets. Cladding stresses can be effectively limited by controlling power increase rates. However, it has been shown that local geometric irregularities caused by manufacturing defects known as missing pellet surfaces (MPS) in fuel pellets can lead to elevated cladding stresses that are sufficiently high to cause cladding failure. Accurate modeling of these defects can help prevent these types of failures. Nuclear fuel performance codes commonly use a 1.5D (axisymmetric, axially-stacked, one-dimensional radial) or 2D axisymmetric representation of the fuel rod. To study the effects of MPS defects, results from 1.5D or 2D fuel performance analyses are typically mapped to thermo-mechanical models that consist of a 2D plane-strain slice or a full 3D representation of the geometry of the pellet and clad in the region of the defect. The BISON fuel performance code developed at Idaho National Laboratory employs either a 2D axisymmetric or 3D representation of the full fuel rod. This allows for a computational model of the full fuel rod to include local defects. A 3D thermo-mechanical model is used to simulate the global fuel rod behavior, and includes effects on the thermal and mechanical behavior of the fuel due to accumulation of fission products, fission gas production and release, and the effects of fission gas accumulation on thermal conductivity across the fuel-clad gap. Local defects can be modeled simply by including them in the 3D fuel rod model, without the need for mapping between two separate models. This allows for the complete set of physics used in a fuel performance analysis to be included naturally in the computational representation of the local defect, and for the effects of the local defect to be coupled with the global fuel rod model. This approach for modeling fuel with MPS defects is demonstrated and compared with alternative techniques. The effects of varying parameters of the MPS defect are studied using this technique and presented here.

B.W. Spencer; J.D. Hales; S.R. Novascone; R.L. Williamson

2012-09-01T23:59:59.000Z

426

Effects of local defect growth in direct-drive cryogenic implosions on OMEGA  

SciTech Connect (OSTI)

Spherically symmetric, low-adiabat (adiabat ? ? 3) cryogenic direct-drive-implosion experiments on the OMEGA laser [T. R. Boehly et al., Opt. Commun. 133, 495 (1995)] yield less than 10% of the neutrons predicted in one-dimensional hydrodynamic simulations. Two-dimensional hydrodynamic simulations suggest that this performance degradation can be explained assuming perturbations from isolated defects of submicron to tens-of-micron scale on the outer surface or inside the shell of implosion targets. These defects develop during the cryogenic filling process and typically number from several tens up to hundreds for each target covering from about 0.2% to 1% of its surface. The simulations predict that such defects can significantly perturb the implosion and result in the injection of about 1 to 2 ?g of the hot ablator (carbon-deuterium) and fuel (deuterium-tritium) materials from the ablation surface into the targets. Both the hot mass injection and perturbations of the shell reduce the final shell convergence ratio and implosion performance. The injected carbon ions radiatively cool the hot spot, reducing the fuel temperature, and further reducing the neutron yield. The negative effect of local defects can be minimized by decreasing the number and size of these defects and/or using more hydrodynamically stable implosion designs with higher shell adiabat.

Igumenshchev, I. V.; Shmayda, W. T.; Harding, D. R.; Sangster, T. C. [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States)] [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States); Goncharov, V. N. [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States) [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14623 (United States); Meyerhofer, D. D. [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States) [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14623 (United States); Department of Physics and Astronomy, University of Rochester, Rochester, New York 14623 (United States)

2013-08-15T23:59:59.000Z

427

Defect formation by pristine indenter at the initial stage of nanoindentation  

SciTech Connect (OSTI)

Nano-indentation is a sophisticated method to characterize mechanical properties of materials. This method samples a very small amount of material during each indentation. Therefore, this method is extremely useful to measure mechanical properties of nano-materials. The measurements using nanoindentation is very sensitive to the surface topology of the indenter and the indenting surfaces. The mechanisms involved in the entire process of nanoindentation require an atomic level understanding of the interplay between the indenter and the substrate. In this paper, we have used atomistic simulation methods with empirical potentials to investigate the effect of various types of pristine indenter on the defect nucleation and growth. Using molecular dynamics simulations, we have predicted the load-depth curve for conical, vickers, and sperical tip. The results are analyzed based on the coherency between the indenter tip and substrate surface for a fixed depth of 20?Ĺ. The depth of defect nucleation and growth is observed to be dependent on the tip geometry. A tip with larger apex angle nucleates defects at a shallower depth. However, the type of defect generated is dependent on the crystalline orientation of the tip and substrate. For coherent systems, prismatic loops were generated, which released into the substrate along the close-packed directions with continued indentation. For incoherent systems, pyramidal shaped dislocation junctions formed in the FCC systems and disordered atomic clusters formed in the BCC systems. These defect nucleation and growth process provide the atomistic mechanisms responsible for the observed load-depth response during nanoindentation.

Chen, I-Hsien [Department of Materials Science and Engineering, National Cheng Kung University, Tainan City, 70101 Taiwan (China); Hsiao, Chun-I [Department of Materials Science and Engineering, National Cheng Kung University, Tainan City, 70101 Taiwan (China); Promotion Center for Global Materials Research, National Cheng Kung University, Tainan City 70101, Taiwan (China); Behera, Rakesh K. [Nuclear and Radiological Engineering Program, George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Hsu, Wen-Dung, E-mail: wendung@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan City, 70101 Taiwan (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan City 70101, Taiwan (China); Promotion Center for Global Materials Research, National Cheng Kung University, Tainan City 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan City 70101 Taiwan (China)

2013-12-07T23:59:59.000Z

428

Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure  

SciTech Connect (OSTI)

Schottky barrier diodes prepared by electron beam deposition (EBD) on Sb-doped n-type Ge were characterized using deep level transient spectroscopy (DLTS). Pt EBD diodes manufactured with forming gas in the chamber had two defects, E{sub 0.28} and E{sub 0.31}, which were not previously observed after EBD. By shielding the samples mechanically during EBD, superior diodes were produced with no measureable deep levels, establishing that energetic ions created in the electron beam path were responsible for the majority of defects observed in the unshielded sample. Ge samples that were first exposed to the conditions of EBD, without metal deposition (called electron beam exposure herein), introduced a number of new defects not seen after EBD with only the E-center being common to both processes. Substantial differences were noted when these DLTS spectra were compared to those obtained using diodes irradiated by MeV electrons or alpha particles indicating that very different defect creation mechanisms are at play when too little energy is available to form Frenkel pairs. These observations suggest that when EBD ions and energetic particles collide with the sample surface, inducing intrinsic non-localised lattice excitations, they modify defects deeper in the semiconductor thus rendering them observable.

Coelho, S. M. M.; Auret, F. D.; Janse van Rensburg, P. J.; Nel, J. M. [Department of Physics, University of Pretoria, Private Bag X20, Hatfield, 0028 (South Africa)

2013-11-07T23:59:59.000Z

429

Analysis of defect generation in Ti–6Al–4V parts made using powder bed fusion additive manufacturing processes  

Science Journals Connector (OSTI)

Abstract Ti–6Al–4V parts made using additive manufacturing processes such as selective laser melting (SLM) and electron beam melting (EBM) are subject to the inclusion of defects. This study purposely fabricated Ti–6Al–4V samples with defects by varying process parameters from the factory default settings in both SLM and EBM systems. Process parameters are classified according to their tendency to create certain types of porosity. Finally, defect characteristics are discussed with respect to defect generation mechanisms; and effective process windows for SLM and EBM system are discussed.

Haijun Gong; Khalid Rafi; Hengfeng Gu; Thomas Starr; Brent Stucker

2014-01-01T23:59:59.000Z

430

The effect of magnetic field on bistability in 1D photonic crystal doped by magnetized plasma and coupled nonlinear defects  

SciTech Connect (OSTI)

In this work, we study the defect mode and bistability behavior of 1-D photonic band gap structure with magnetized plasma and coupled nonlinear defects. The transfer matrix method has been employed to investigate the magnetic field effect on defect mode frequency and bistability threshold. The obtained results show that the frequency of defect mode and bistability threshold can be altered, without changing the structure of the photonic multilayer. Therefore, the bistability behavior of the subjected structure in the presence of magnetized plasma can be utilized in manufacturing wide frequency range devices.

Mehdian, H.; Mohammadzahery, Z.; Hasanbeigi, A. [Department of Physics and Institute for Plasma Research, Kharazmi University, 49 Dr Mofatteh Avenue, Tehran 15614 (Iran, Islamic Republic of)] [Department of Physics and Institute for Plasma Research, Kharazmi University, 49 Dr Mofatteh Avenue, Tehran 15614 (Iran, Islamic Republic of)

2014-01-15T23:59:59.000Z

431

Estimate of the allowable dimensions of diagnosed defects in category III and IV welded pipeline joints{sup 1}  

SciTech Connect (OSTI)

An approach for estimating the permissible dimensions of technological defects in butt welded joints in category III and IV pipelines is described. The allowable size of a welding defect is determined from the condition of compliance with the specifications on strength for a reference cross section (damaged joint) of the pipeline taking into account its weakening by a given defect.With regard to the fairly widespread discovery of technological defects in butt welded joints during diagnostics of auxiliary pipelines for thermal electric power plants, the proposed approach can be used in practice by repair and consulting organizations.

Grin', E. A.; Bochkarev, V. I. [JSC 'All-Russia Thermal Engineering Institute' (JSC 'VTI') (Russian Federation)] [JSC 'All-Russia Thermal Engineering Institute' (JSC 'VTI') (Russian Federation)

2013-01-15T23:59:59.000Z

432

Energy dependence of defects in a-Si:H solar cells during degradation and annealing processes  

SciTech Connect (OSTI)

In this work the authors report on the effect of current-induced degradation and annealing on p-i-n amorphous silicon solar cells. Current-voltage curves and capacitance measurements under forward bias have been used to monitor the current-induced changes as a function of time. They found that the recovery rate increases with the annealing current, while the stabilized value of efficiency decreases. Comparison of short circuit current and capacitance evolution suggests that defect kinetics in the electronic gap occurs in a different way during degradation and annealing. This behavior can be modeled assuming a faster annealing of defects closest to the extended band and a slower annealing of mid-gap defects.

Caputo, D.; Lemmi, F.; Palma, F.

1997-07-01T23:59:59.000Z

433

Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states  

SciTech Connect (OSTI)

The electronic and ionic transports in 32–56?nm thick anodic aluminum oxide films are investigated before and after a 1-h anneal at 200–400?°C in argon. Results are correlated to their defect density as measured by the Mott-Schottky technique. Solid state measurements show that electronic conduction upon annealing is hindered by an increase in the Schottky emission barrier, induced by a reduction in dopant density. Using an electrochemical contact, the films fail rapidly under cathodic polarization, unless defect density is decreased down to 10{sup 17}?cm{sup ?3}, resulting in a three order of magnitude reduction in current and no visible gas evolution. Under anodic polarization, the decrease in defect density delays the onset of ionic conduction as well as further oxide growth and failure.

Mibus, M.; Zangari, G. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jensen, C. [Department of Chemical Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Hu, X.; Reed, M. L. [Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Knospe, C. [Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)

2014-06-16T23:59:59.000Z

434

Multiscale quantum-defect theory and its application to atomic spectrum  

E-Print Network [OSTI]

We present a multiscale quantum-defect theory based on the first analytic solution for a two-scale long range potential consisting of a Coulomb potential and a polarization potential. In its application to atomic structure, the theory extends the systematic understanding of atomic Rydberg states, as afforded by the standard single-scale quantum-defect theory, to a much greater range of energies to include the first few excited states and even the ground state. Such a level of understanding has important implications not only on atomic structure, but also on the electronic structure of molecules and on atomic and molecular interactions and reactions. We demonstrate the theory by showing that it provides an analytic description of the energy variations of the standard Coulomb quantum defects for alkali-metal atoms.

Fu, Haixiang; Tey, Meng Khoon; You, Li; Gao, Bo

2015-01-01T23:59:59.000Z

435

Electrostatic particle trap for ion beam sputter deposition  

DOE Patents [OSTI]

A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

Vernon, Stephen P. (Pleasanton, CA); Burkhart, Scott C. (Livermore, CA)

2002-01-01T23:59:59.000Z

436

Single Defect Center Scanning Near-Field Optical Microscopy on Graphene  

E-Print Network [OSTI]

We demonstrate high resolution scanning fluorescence resonance energy transfer 10 microscopy between a single nitrogen-vacancy center as donor and graphene as acceptor. 11 Images with few nanometer resolution of single and multilayer graphene structures were 12 attained. An energy transfer efficiency of 30% at distances of 10nm between a single 13 defect and graphene was measured. Further the energy transfer distance dependence of 14 the nitrogen-vacancy center to graphene was measured to show the predicted d-4 15 dependence. Our studies pave the way towards a diamond defect center based versatile 16 single emitter scanning microscope.

J. Tisler; T. Oeckinghaus; R. Stöhr; R. Kolesov; F. Reinhard; J. Wrachtrup

2013-01-02T23:59:59.000Z

437

Atomic delocalisation as a microscopic origin of two-level defects in Josephson junctions  

E-Print Network [OSTI]

Identifying the microscopic origins of decoherence sources prevalent in Josephson junction based circuits is central to their use as functional quantum devices. Focussing on so called "strongly coupled" two-level defects, we construct a theoretical model using the atomic position of the oxygen which is spatially delocalised in the oxide forming the Josephson junction barrier. Using this model, we investigate which atomic configurations give rise to two-level behaviour of the type seen in experiments. We compute experimentally observable parameters for phase qubits and examine defect response under the effects of applied electric field and strain.

Timothy C. DuBois; Salvy P. Russo; Jared H. Cole

2014-08-25T23:59:59.000Z

438

Hydrogen density of states and defects densities in a-Si:H  

SciTech Connect (OSTI)

The properties of hydrogenated amorphous silicon (a-Si:H) and its devices depend fundamentally on the density of states (DOS) in the gap due to dangling bonds. It is generally believed that the density of dangling bonds is controlled by a chemical equilibrium with the weak Si-Si bonds which form the localized valence band tail states. Further details are given of a unified model of the hydrogen density of states and defect pool of a-Si:H. The model is compared to other defect models and extended to describe a-Si alloys and the creation of valence band tail states during growth.

Deane, S.C.; Powell, M.J. [Philips Research Labs., Redhill, Surrey (United Kingdom); Robertson, J. [Cambridge Univ. (United Kingdom). Engineering Dept.

1996-12-31T23:59:59.000Z

439

Influence of defects on excess charge carrier kinetics studied by transient PC and transient PA  

SciTech Connect (OSTI)

By comparison of transient photoconductivity (TPC) and transient photoinduced absorption (PA) the influence of the density of states in the bandgap on excess charge carrier kinetics is studied for a-Si:H films deposited at different temperatures and for state of the art a-Si:H films in two different states of light soaking. In both series the rising deep defect density leads to an enhancement of electron trapping rather than recombination via deep defects. The samples deposited at temperatures lower than 250 C additionally show a lower effective electron mobility, i.e., a broader conduction band tail.

Feist, H.; Kunst, M.; Swiatkowski, C.

1997-07-01T23:59:59.000Z

440

Atomic configuration of irradiation-induced planar defects in 3C-SiC  

SciTech Connect (OSTI)

The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

Lin, Y. R. [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); National Synchrotron Radiation Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan (China); Ho, C. Y. [Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Hsieh, C. Y.; Chang, M. T.; Lo, S. C. [Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Chen, F. R. [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Kai, J. J., E-mail: ceer0001@gmail.com [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China)

2014-03-24T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

All-optical coherent population trapping with defect spin ensembles in silicon carbide  

E-Print Network [OSTI]

Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions, with properties that are similar to the nitrogen-vacancy defect in diamond. We report experiments on 4H-SiC that investigate all-optical addressing of spin states with the zero-phonon-line transitions. Our magneto-spectroscopy results identify the spin $S=1$ structure of the ground and excited state, and a role for decay via intersystem crossing. We use these results for demonstrating coherent population trapping of spin states with divacancy ensembles that have particular orientations in the SiC crystal.

Olger V. Zwier; Danny O'Shea; Alexander R. Onur; Caspar H. van der Wal

2014-11-06T23:59:59.000Z

442

Friedel sum rule in the presence of topological defects for graphene  

E-Print Network [OSTI]

The Friedel sum rule is extended to deal with topological defects for the case of a graphene cone in the presence of an external Coulomb charge. The dependence in the way the number of states change due to both the topological defect as well as the Coulomb charge are studied. Our analysis addresses both the cases of a subcritical as well as a supercritical value of the Coulomb charge. We also discuss the experimental implications of introducing a self-adjoint extension of the system Hamiltonian. We argue that the boundary conditions following from the self-adjoint extension encode the effect of short range interactions present in the system.

Baishali Chakraborty; Kumar S. Gupta; Siddhartha Sen

2014-03-20T23:59:59.000Z

443

Work function engineering of single layer graphene by irradiation-induced defects  

SciTech Connect (OSTI)

We report the tuning of electrical properties of single layer graphene by ?-beam irradiation. As the defect density increases upon irradiation, the surface potential of the graphene changes, as determined by Kelvin probe force microscopy and Raman spectroscopy studies. X-ray photoelectron spectroscopy studies indicate that the formation of C/O bonding is promoted as the dose of irradiation increases when at atmospheric conditions. Our results show that the surface potential of the graphene can be engineered by introducing atomic-scale defects via irradiation with high-energy particles.

Kim, Jong-Hun; Hwang, Jin Heui; Kwon, Sangku; Young Park, Jeong [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science, and Graduate School of EEWS, KAIST, 373-1 Guseong Dong, Daejeon 305-701 (Korea, Republic of)] [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science, and Graduate School of EEWS, KAIST, 373-1 Guseong Dong, Daejeon 305-701 (Korea, Republic of); Suh, Joonki; Tongay, Sefaattin [Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720 (United States)] [Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720 (United States); Hwang, C. C. [Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)] [Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of); Wu, Junqiao [Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720 (United States) [Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720 (United States); Division of Materials Sciences, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2013-10-21T23:59:59.000Z

444

Identifying structural flow defects in disordered solids using machine learning methods  

E-Print Network [OSTI]

We use machine learning methods on local structure to identify flow defects - or regions susceptible to rearrangement - in jammed and glassy systems. We apply this method successfully to two disparate systems: a two dimensional experimental realization of a granular pillar under compression, and a Lennard-Jones glass in both two and three dimensions above and below its glass transition temperature. We also identify characteristics of flow defects that differentiate them from the rest of the sample. Our results show it is possible to discern subtle structural features responsible for heterogeneous dynamics observed across a broad range of disordered materials.

Ekin D. Cubuk; Samuel S. Schoenholz; Jennifer M. Rieser; Brad D. Malone; Joerg Rottler; Douglas J. Durian; Efthimios Kaxiras; Andrea J. Liu

2014-09-24T23:59:59.000Z

445

Supermodes of Chiral Photonic Filters with Combined Twist and Layer Defects  

Science Journals Connector (OSTI)

We consider the circularly polarized localized modes of chiral photonic structures with combined central twist and isotropic layer defects. The general filter is shown to suffer from anomalous remittance and saturation of linewidth as the thickness of the structure is increased. However, by choosing parameters that phase match the elements of the round-trip matrix of the isotropic layer defect, we demonstrate the existence of supermodes that maintain exceptional purity of polarization state and exponential decrease in linewidth as the thickness is increased.

Ian J. Hodgkinson; Qi hong Wu; Lakshman De Silva; Matthew Arnold; Martin W. McCall; Akhlesh Lakhtakia

2003-11-26T23:59:59.000Z

446

Orientational Defects in Ice Ih: An Interpretation of Electrical Conductivity Measurements  

Science Journals Connector (OSTI)

We present a first-principles study of the structure and energetics of Bjerrum defects in ice Ih and compare the results to experimental electrical conductivity data. While the DFT result for the activation energy is in good agreement with experiment, we find that its two components have quite different values. Aside from providing new insight into the fundamental parameters of the microscopic electrical theory of ice, our results suggest the activity of traps in doped ice in the temperature regime typically assumed to be controlled by the free migration of L defects.

Maurice de Koning; Alex Antonelli; Antonio J. R. da Silva; A. Fazzio

2006-02-21T23:59:59.000Z

447

Role of point defects in the photosensitivity of hydrogen-loaded phosphosilicate glass  

SciTech Connect (OSTI)

It is shown that point defect modifications in hydrogen-loaded phosphosilicate glass (PSG) do not play a central role in determining its photosensitivity. Photochemical reactions that involve a two-step point defect modification and pre-exposure effect are incapable of accounting for photoinduced refractive index changes. It seems likely that a key role in UV-induced refractive index modifications is played by structural changes in the PSG network. Experimental data are presented that demonstrate intricate network rearrangement dynamics during UV exposure of PSG. (fiber optics)

Larionov, Yu V [A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

2010-08-03T23:59:59.000Z

448

All-optical switching and multistability in photonic structures with liquid crystal defects  

E-Print Network [OSTI]

We demonstrate that one-dimensional photonic crystals with pure nematic liquid-crystal defects can operate as all-optical switching devices based on optical orientational nonlinearities of liquid crystals. We show that such a periodic structure is responsible for a modulated threshold of the optical Fr\\'eedericksz transition in the spectral domain, and this leads to all-optical switching and light-induced multistability. This effect has no quasi-statics electric field analogue, and it results from nonlinear coupling between light and a defect mode.

Andrey E. Miroshnichenko; Etienne Brasselet; Yuri S. Kivshar

2007-12-24T23:59:59.000Z

449

Statistical process control based on Multivariate Image Analysis: A new proposal for monitoring and defect detection  

Science Journals Connector (OSTI)

Abstract The monitoring, fault detection and visualization of defects are a strategic issue for product quality. This paper presents a novel methodology based on the integration of textural Multivariate Image Analysis (MIA) and multivariate statistical process control (MSPC) for process monitoring. The proposed approach combines MIA and p-control charts, as well as T2 and RSS images for defect location and visualization. Simulated images of steel plates are used to illustrate the monitoring performance of it. Both approaches are also applied on real clover images.

J.M. Prats-Montalbán; A. Ferrer

2014-01-01T23:59:59.000Z

450

Dry Etching with Photoresist Masks  

E-Print Network [OSTI]

Typical etch gases for SiO2 -etching are mixtures of Cx Fy Hz , e. g. CF4 (1) Formation of Fluoric-radicals by impact ionization: e- + CF4 CF3 + F + e- (2) Formation of volatile silicon compounds: SiO2 + 4F SiF4 + O2 Typical etch gases for Si-etching are mixtures of Cx Fy Clz , e. g. CF4 (1) Formation of Fluoric

Yoo, S. J. Ben

451

A programmable droplet-based microfluidic device applied to multiparameter analysis of single microbes and microbial communities  

Science Journals Connector (OSTI)

...bottom of the device and the slide (Harrick Plasma). Photo-lithography masks were designed by using AutoCAD software (Autodesk) and used to generate high-resolution (20,000 dpi) transparency masks (CAD/Art Services). Molds were fabricated...

Kaston Leung; Hans Zahn; Timothy Leaver; Kishori M. Konwar; Niels W. Hanson; Antoine P. Pagé; Chien-Chi Lo; Patrick S. Chain; Steven J. Hallam; Carl L. Hansen

2012-01-01T23:59:59.000Z

452

The association between mountaintop mining and birth defects among live births in central Appalachia, 1996–2003  

Science Journals Connector (OSTI)

Birth defects are examined in mountaintop coal mining areas compared to other coal mining areas and non-mining areas of central Appalachia. The study hypothesis is that higher birth-defect rates are present in mountaintop mining areas. National Center for Health Statistics natality files were used to analyze 1996–2003 live births in four Central Appalachian states (N=1,889,071). Poisson regression models that control for covariates compare birth defect prevalence rates associated with maternal residence in county mining type: mountaintop mining areas, other mining areas, or non-mining areas. The prevalence rate ratio (PRR) for any birth defect was significantly higher in mountaintop mining areas compared to non-mining areas (PRR=1.26, 95% CI=1.21, 1.32), after controlling for covariates. Rates were significantly higher in mountaintop mining areas for six of seven types of defects: circulatory/respiratory, central nervous system, musculoskeletal, gastrointestinal, urogenital, and ‘other’. There was evidence that mountaintop mining effects became more pronounced in the latter years (2000–2003) versus earlier years (1996–1999.) Spatial correlation between mountaintop mining and birth defects was also present, suggesting effects of mountaintop mining in a focal county on birth defects in neighboring counties. Elevated birth defect rates are partly a function of socioeconomic disadvantage, but remain elevated after controlling for those risks. Both socioeconomic and environmental influences in mountaintop mining areas may be contributing factors.

Melissa M. Ahern; Michael Hendryx; Jamison Conley; Evan Fedorko; Alan Ducatman; Keith J. Zullig

2011-01-01T23:59:59.000Z

453

PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER  

E-Print Network [OSTI]

267 PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER Laboratoire Einstein, 69621 Villeurbanne Cedex, France Résumé. 2014 Les défauts électriquement inactifs dans CdTe ont of electrically inactive defects has been performed on CdTe single crystals by two different experimental

Boyer, Edmond

454

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine,1  

E-Print Network [OSTI]

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine Laboratory, Golden, CO 80401 ABSTRACT Polycrystalline thin-film CdTe is one of the leading materials used various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL

Sites, James R.

455

Process Guide for the Identification and Disposition of S/CI or Defective Items at Department of Energy Facilities  

Broader source: Energy.gov [DOE]

The Process Guide for the Identification and Disposition of S/CI or Defective Items was developed to help DOE facilities to collect, screen, communicate information, and dispose of S/CI or defective items that could potentially impact operations at DOE facilities.

456

Comments on the formation entropy of a Frenkel defect in BaF2 and CaF2  

Science Journals Connector (OSTI)

The entropy for the formation of a Frenkel defect in alkaline-earth halides has been estimated using the defect's formation enthalpy and the temperature variation of the crystal's bulk modulus. The values obtained for BaF2 and CaF2 are in good agreement with the experimental results.

P. Varotsos

1976-01-15T23:59:59.000Z

457

I point my heart with the tip of my ngers -Biometry for the diagnosis congenital heart defects  

E-Print Network [OSTI]

I point my heart with the tip of my ngers - Biometry for the diagnosis congenital heart defects Vasculaires, HĂ´pital de Pontchaillou, Rennes, France Abstract Congenital heart defects are characterized by abnormal positioning of some anatomical structures relative to a normal heart. Classically the classication

Boyer, Edmond

458

Atomic Resolution Imaging of Grain Boundary Defects in Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride  

E-Print Network [OSTI]

-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed to their potential scalability. However, low and ambient pressure CVD synthesis routes on polycrystalline substrates determined the structure of vacancies, holes, line defects, and grain boundaries8-10 in CVD graphene, as well

Zettl, Alex

459

Regular bottlenecks and restrictions to somatic fusion prevent the accumulation of mitochondrial defects in Neurospora  

Science Journals Connector (OSTI)

...Table-3. Effect of hyphal fusion on the survival of cultures...methods. On race tubes, fusion-defective ham-2RIP...twofold longer than wild-type strains (Wald's Z...2003 Different cell types in Neurospora crassa...The genetics of hyphal fusion and vegetative incompatibility...

2014-01-01T23:59:59.000Z

460

Spiral-defect chaos: Swift-Hohenberg model versus Boussinesq equations Rainer Schmitz,1,  

E-Print Network [OSTI]

Spiral-defect chaos: Swift-Hohenberg model versus Boussinesq equations Rainer Schmitz,1, * Werner properties of SDC are accurately described on the basis of the standard three-dimensional Boussinesq and the rigorous solutions of the Boussinesq equations. The small-scale structure of the vorticity field

Schmidt, Matthias

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Efficient 3D characterization of raised topological defects in smooth specular coatings  

Science Journals Connector (OSTI)

Many smooth, highly specular coatings, such as automotive paints and appliance coatings, are subjected to considerable performance demands and manufacturers spend significant sums each year to monitor and repair coating surface quality. Additionally, ... Keywords: Camera calibration, Defect characterization, Surface quality of specular coatings, Surface reflectance model

Pradeep Gnanaprakasam; Johné M. Parker; Subburengan Ganapathiraman; Zhen Hou

2009-03-01T23:59:59.000Z

462

Nature Neuroscience Circuit level defects in the developing neocortex of fragile X mice.  

E-Print Network [OSTI]

Nature Neuroscience Circuit level defects in the developing neocortex of fragile X mice. J. Tiago correlation coefficients and firing rates in WT and in Fmr1­/­ mice. Nature Neuroscience: doi:10.1038/nn.3415 =0.005 ** p Firing rate vs. correlation coefficient P14

Cai, Long

463

Narrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence  

E-Print Network [OSTI]

Institute of Physics. Related Articles Effect of CdS film thickness on the photoexcited carrier lifetime of TiO2/CdS core-shell nanowires Appl. Phys. Lett. 99, 153111 (2011) Current underestimationNarrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence

Russell, Kasey

464

Mapping defects in a carbon nanotube by momentum transfer dependent electron energy loss spectromicroscopy  

E-Print Network [OSTI]

Mapping defects in a carbon nanotube by momentum transfer dependent electron energy loss nanotubes Electron microscopy Electron energy loss spectroscopy q-dependence Electron linear dichroism a b s t r a c t Momentum resolved electron energy loss (EELS) spectra of multi-walled carbon nanotubes

Hitchcock, Adam P.

465

Modeling a distribution of point defects as misfitting inclusions in stressed solids  

E-Print Network [OSTI]

, as in the case of solid solution strengthening, or undesirable effects, as with hydrogen embrittlement-stress limit. Key words: solute, point defect, hydrogen, inclusion, dislocation 1 Introduction Solid solutions and Physics of Solids (2014) #12;or processing, or via attack by highly permeable contaminants (e.g. hydrogen

Cai, Wei

466

Primary Radiation Defect Production in Polyethylene and Cellulose Jussi Polvi,* Petri Luukkonen, and Kai Nordlund  

E-Print Network [OSTI]

Primary Radiation Defect Production in Polyethylene and Cellulose Jussi Polvi,* Petri Luukkonen in polyethylene and cellulose were examined using molecular dynamics simulations. The governing reactions in both. Crystalline cellulose was found to be more resistant to radiation damage than crystalline polyethylene

Nordlund, Kai

467

On the Computation of CMBR Anisotropies from Simulations of Topological Defects  

E-Print Network [OSTI]

Techniques for computing the CMBR anisotropy from simulations of topological defects are discussed with an eye to getting as much information from a simulation as possible. Here we consider the practical details of which sums and multiplications to do and how many terms there are.

Albert Stebbins; Scott Dodelson

1997-05-21T23:59:59.000Z

468

Calculation of the Formation Energy of a Schottky Defect in Germanium  

Science Journals Connector (OSTI)

The formation energy of a Schottky defect in germanium has been calculated from first principles by using the valence-bond method of Heitler and London. The formation energy of a vacancy is given by the difference between the ground-state energy of the crystal containing the defect and that of the perfect crystal. The latter is derived by using a method based on the general directional theory of valence. The energy of the defect crystal is obtained by using the same general method but taking into account the possible pairing schemes for the vacancy electrons and applying the method of resonance. The tetrahedral valence state of germanium is used as the reference level for the various energies in the calculation. The numerical result obtained depends on the value chosen for the cohesive energy of germanium. Using an average of the three reported values for this quantity, we find for the formation energy at a Schottky defect Ev=2.21±0.18 eV. This is in good agreement with the experimental values.

C. J. Hwang and L. A. K. Watt

1968-07-15T23:59:59.000Z

469

Atomistic simulations of surface segregation of defects in solid oxide electrolytes  

E-Print Network [OSTI]

) are widely used electrolyte materials for solid oxide fuel cells (SOFCs) due to their high ionic conductivAtomistic simulations of surface segregation of defects in solid oxide electrolytes Hark B. Lee is important in fuel cell applications because it can affect the near-surface chemical reactions and ionic

Cai, Wei

470

Optimal Randomized Group Testing: A Canonical Form and the One-Defective Case  

E-Print Network [OSTI]

In the group testing problem, a set of n elements is given which are either defective (positive) or non. A group test takes any subset Q of elements, called a pool. The test (or pool) is positive if Q P is not limited, and tests can be done sequentially. We sometimes refer to a set of pools as a pooling design

Damaschke, Peter

471

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance  

E-Print Network [OSTI]

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance P.J. Sellin1-destructive material characterisation techniques have been applied to CdTe wafers grown by the Travelling Heater Method Imaging Group PL mapping of whole CdTe wafers PL ( =819 nm) scan for two CdTe wafers, (left: wafer L700

Sellin, Paul

472

Exploring the eddy current excitation invariance to infer about defect characteristics  

SciTech Connect (OSTI)

This paper explores the excitation probe excitation field invariance when the eddy current method is applied to detect, localize and characterize material defects in conductive nonmagnetic media. The cases relative to rotational symmetry in circular solenoidal probes and translation symmetry in constant field probes are presented. The experimental data shows that this theoretical treatment is useful to preview the behavior of these probes.

Ribeiro, A. Lopes; Ramos, H. G. [I and M Group, Instituto de Telecomunicacoes, Lisboa, Portugal Instituto Superior Tecnico, DEEC, Lisboa (Portugal)

2011-06-23T23:59:59.000Z

473

Prophage mutation causing heat inducibility of defective Bacillus subtilis bacteriophage PBSX.  

Science Journals Connector (OSTI)

...activity. It therefore appeared that RB1952 car- 3 ried two mutations, one designated...MMC did trast, bot (22) were strain car Siegel an( Protein some stag occur, sin...952. A culture of strain RB1034 growing defective (22), Kill+ recombinants were iso...

R S Buxton

1976-10-01T23:59:59.000Z

474

Identification of defect sites on oxide surfaces by metastable impact electron spectroscopy  

E-Print Network [OSTI]

Identification of defect sites on oxide surfaces by metastable impact electron spectroscopy S). The electronic and chemical properties of the thin films are identical to those of the corre- sponding bulk that exhibit essentially the same electronic and chemical properties of the corresponding bulk single crystals

Goodman, Wayne

475

Atomic-Scale Mapping of Thermoelectric Power on Graphene: Role of Defects and Boundaries  

E-Print Network [OSTI]

by conductance measurements alone. Indeed, the thermoelectric properties of this two-dimensional material have scattering effects in thermoelectric materials. An alternative way to study the thermoelectric properties1 Atomic-Scale Mapping of Thermoelectric Power on Graphene: Role of Defects and Boundaries Jewook

Feenstra, Randall

476

Grain boundary defects initiation at the outer surface of dissimilar welds: Corrosion mechanism studies  

SciTech Connect (OSTI)

Dissimilar welds located on the primary coolant system of the French PWR plants exhibit grain boundary defects in the true austenitic zones of the first buttering layer. If grain boundaries reach the interface, they can extend to the martensitic band. Those defects are filled with compact oxides. In addition, the ferritic base metal presents some pits along the interface. Nowadays, three mechanisms are proposed to explain the initiation of those defects: stress corrosion cracking, intergranular corrosion and high temperature intergranular oxidation. This paper is dealing with the study of the mechanisms involved in the corrosion phenomenon. Intergranular corrosion tests performed on different materials show that only the first buttering layer, even with some {delta} ferrite, is sensitized. The results of stress corrosion cracking tests in water solutions show that intergranular cracking is possible on a bulk material representative of the first buttering layer. It is unlikely on actual dissimilar welds where the ferritic base metal protects the first austenitic layer by galvanic coupling. Therefore, the stress corrosion cracking assumption cannot explain the initiation of the defects in aqueous environment. The results of the investigations and of the corrosion studies led to the conclusion that the atmosphere could be the only possible aggressive environment. This conclusion is based on natural atmospheric exposure and accelerated corrosion tests carried out with SO{sub 2} additions in controlled atmosphere. They both induce a severe intergranular corrosion on true sensitized austenitic materials.

Bouvier, O. De; Yrieix, B. [Electricite De France, Moret Sur Loing (France). Research and Development Division

1995-12-31T23:59:59.000Z

477

Testing for Interconnect Crosstalk Defects Using On-Chip Embedded Processor Cores  

E-Print Network [OSTI]

Testing for Interconnect Crosstalk Defects Using On-Chip Embedded Processor Cores Li Chen on long interconnects and must be addressed during manufacturing testing. External testing for crosstalk is expensive due to the need for high-speed testers. Built-in self-test, while eliminating the need for a high

California at San Diego, University of

478

Computing in the 21st century: nanocircuitry, defect tolerance and quantum logic  

Science Journals Connector (OSTI)

...estimate of the energy required to add...from ENIAC. The implementation of some reversibility...similar to the challenges that are faced...Teramac and its implementation of defect tolerance...even such exotic implementations of quantum logic...pursued today could wind up in desktop computers...

1998-01-01T23:59:59.000Z

479

PARTIAL DISCHARGE TESTING OF DEFECTIVE THREE-PHASE PILC CABLE UNDER RATED CONDITIONS  

E-Print Network [OSTI]

PARTIAL DISCHARGE TESTING OF DEFECTIVE THREE-PHASE PILC CABLE UNDER RATED CONDITIONS J. A. Hunter 1 lifespan. An increase in the failure rates of paper insulated lead covered (PILC) cables that make up is to document the effects of mechanical stress on the generation of partial discharge (PD) for cables of PILC

Southampton, University of

480

Nanostructured high-temperature superconductors: Creation of strong-pinning columnar defects in  

E-Print Network [OSTI]

Nanostructured high-temperature superconductors: Creation of strong-pinning columnar defects the growth and incorporation of MgO nanorods into high temperature superconductors (HTS's) has been developed a limitation to the performance of HTS materials at high temperatures and magnetic fields.11­13 The traditional

Yang, Peidong

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Salvaged castings and methods of salvaging castings with defective cast cooling bumps  

DOE Patents [OSTI]

Castings for gas turbine parts exposed on one side to a high-temperature fluid medium have cast-in bumps on an opposite cooling surface side to enhance heat transfer. Areas on the cooling surface having defectively cast bumps, i.e., missing or partially formed bumps during casting, are coated with a braze alloy and cooling enhancement material to salvage the part.

Johnson, Robert Alan (Simpsonville, SC); Schaeffer, Jon Conrad (Greenville, SC); Lee, Ching-Pang (Cincinnati, OH); Abuaf, Nesim (Lincoln City, OR); Hasz, Wayne Charles (Pownal, VT)

2002-01-01T23:59:59.000Z

482

Atomic-scale electron-beam sculpting of defect-free graphene nanostructures  

E-Print Network [OSTI]

Atomic-scale electron-beam sculpting of defect-free graphene nanostructures Bo Song, Grégory F.w.zandbergen@tudelft.nl ABSTRACT. In order to harvest the many promising properties of graphene in (electronic) applications a temperature-dependent self-repair mechanism allowing damage-free atomic-scale sculpting of graphene using

Dekker, Cees

483

The influence of ion flux on defect production in MeV proton-irradiated silicon  

E-Print Network [OSTI]

The influence of ion flux on defect production in MeV proton-irradiated silicon A. Hall&, D. Fenyli, and B. U. R. Sundqvist Department of Radiation Sciences, Division of Ion Physics, P.O. Box 535, Uppsala University, S-751 21 UppsaIa, Sweden R. E. Johnson Department of Nuclear Engineering and Engineering Physics

Johnson, Robert E.

484

Effect of Tin+ defects on electrochemical properties of highly-ordered titania  

E-Print Network [OSTI]

and photoelectrocatalysis [2­5]. However, the general conclusion is that titanium dioxide is the most promising material due band gap, e.g., of about 3.2 eV, too high to provide a good match between the adsorption of spectrum defects, such as oxygen vacancies, titanium interstitial and more complex structures, which will increase

Cao, Guozhong

485

Defect-Oriented Testing and Diagnosis of Digital Microfluidics-Based Biochips*  

E-Print Network [OSTI]

Defect-Oriented Testing and Diagnosis of Digital Microfluidics- Based Biochips* Fei Su , William, NC 27708 Charlotte, NC 28223 {fs, wlh, krish}@ee.duke.edu amukherj@uncc.edu Abstract Microfluidics]. Microfluidics-based biochips constitute an emerging category of mixed-technology microsystems [7]. Recent

Chakrabarty, Krishnendu

486

Back-side hydrogenation technique for defect passivation in silicon solar cells  

DOE Patents [OSTI]

A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts. 3 figures.

Sopori, B.L.

1994-04-19T23:59:59.000Z

487

The effect of topological defects and oxygen adsorption on the electronic transport properties of  

E-Print Network [OSTI]

The effect of topological defects and oxygen adsorption on the electronic transport properties theory (DFT) calculations of the interactions between isolated infinitely-long semiconducting zig- zag-oxygen adsorption and its effect on electronic transport properties of these SWCNTs. A Green's function method

Grujicic, Mica

488

Mapping hidden aircraft defects with dual-band infrared computed tomography  

SciTech Connect (OSTI)

Infrared computed tomography (IRCT) is a promising, non-contact, nondestructive evaluation tool used to inspect the mechanical integrity of large structures. We describe on-site, proof-of-principle demonstrations of IRCt to inspect defective metallic and composite structures. The IRCT system captures time sequences of heat-stimulated, dual-band infrared (DBIR) thermal maps for flash-heated and naturally-heated targets. Our VIEW algorithms produce co-registered thermal, thermal inertia, and thermal-timegram maps from which we quantify the percent metal-loss corrosion damage for airframes and the defect sites, depths, and host-material physical properties for composite structures. The IRCT method clarifies the type of defect, e.g., corrosion, fabrication, foreign-material insert, delamination, unbond, void, and quantifies the amount of damage from the defect, e.g., the percent metal-loss from corrosion in metal structures, the depth, thickness, and areal extent of heat damage in multi-layered composite materials. Potential long-term benefits of IRCT technology are in-service monitoring of incipient corrosion damage, to avoid catastrophic failure and production-monitoring of cure states for composite materials.

Del Grande, N.K.; Durbin, P.F.

1995-04-03T23:59:59.000Z

489

Apple Defect Detection and Quality Classification with MLP-Neural Networks  

E-Print Network [OSTI]

Apple Defect Detection and Quality Classification with MLP-Neural Networks Devrim UNAY, Bernard' apples is shown. Color, texture and wavelet features are extracted from the apple images. Principal-classifications. The European Union defines three quality classes ("extra", "I", and "II") for the fresh apples

Dupont, Stéphane

490

Surface Science 411 (1998) 137153 Intrinsic defects on a TiO  

E-Print Network [OSTI]

(UHV). After annealing to 1100 K in UHV, a (1�1) surface with a terrace width of ~100 A° is obtained defects) in the bridging oxygen rows are created by the high-temperature anneal in UHV. In STM images]. and annealed to ~1100 K in UHV. We first discussRecently, Scanning Tunneling Microscopy the overall morph

Diebold, Ulrike

491

The role of vacancy defects and holes in the fracture of carbon nanotubes  

E-Print Network [OSTI]

, The University of Iowa, Iowa City, IA 52242-1527, USA Received 16 February 2004; in final form 16 April 2004 defects in- troduced by high-energy transmission electron micros- copy (TEM) imaging. Theoretical Letters 390 (2004) 413­420 www.elsevier.com/locate/cplett #12;failure stresses were independently measured

492

Deepwater Horizon oil left tuna, other species with heart defects likely to prove fatal  

E-Print Network [OSTI]

of crude, young tuna and amberjack, some of the speediest predators in the ocean, developed heart defects in the northern Gulf of Mexico in April 2010. Embryos are highly sensitive, so fragile that it is possible to see population." The study -- "Deepwater Horizon crude oil impacts the developing hearts of large predatory

Grosell, Martin

493

Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers  

SciTech Connect (OSTI)

A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al{sub 0.32}Ga{sub 0.68}As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al{sub 0.32}Ga{sub 0.68}:Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700{degrees}C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450{degrees}C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500{degrees}C. The nature of the defect was shown to be different for material grown at 350 and 230{degrees}C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230{degrees}C, respectively.

Umlor, M.T.; Keeble, D.J. [Michigan Technological Univ., Houghton, MI (United States). Dept. of Physics; Asoka-Kumar, P.; Lynn, K.G. [Brookhaven National Lab., Upton, NY (United States); Cooke, P.W. [Geo-Centers, Inc., Eatontown, NJ (United States). Fort Monmouth Operation

1994-08-01T23:59:59.000Z

494

Tuning the defect configurations in nematic and smectic liquid crystalline shells  

Science Journals Connector (OSTI)

...arrangements in smectic liquid crystal shells utilizing the...Nematic-smectic transition in spherical shells. Phys. Rev...Topological defects in spherical nematics. Phys. Rev...a smectic-a from a bent nematic phase and smectic...The physics of liquid crystals. Oxford, UK: Clarendon...

2013-01-01T23:59:59.000Z

495

Role of self-irradiation defects on the ageing of 239 , J.-C. Griveau1  

E-Print Network [OSTI]

, France PACS 74.62.Dh ­ Effects of crystal defects, doping and substitution PACS 74.25.Qt ­ Vortex irradiation techniques. Among these are exposure at low temperature to high energy electrons, yielding in a German silver tube (Cu62Ni18Zn20 alloy) for magnetisation measurements or in a copper sample- p-1 hal

Boyer, Edmond

496

Photocatalytic studies of Ho–Zr–O nano-composite with controllable composition and defects  

SciTech Connect (OSTI)

With the help of sol–gel method assisted by melting salt, a series of Ho–Zr–O nano-composite with controllable composition and defects have been successfully prepared. Characterization results show that the positions, intensity, and width of the X-ray diffraction peaks of the products have a regular variation with the increase of zirconium element which implies the gradual changes of crystal spacing and product size. At the same time, the molar ratios between holmium and zirconium ions are consistent with the chemical formula and both of them are uniformly distributed in products further showing the perfect formation of targeted materials. Optical properties reveal that diversified defect forms of Ho–Zr–O nano-composite lead to the different absorptions of visible light. Photocatalytic experiments demonstrate Zr{sub 0.8}Ho{sub 0.2}O{sub 2??} nano-crystals have excellent visible-light-responsive photocatalytic activities on some familiar dyes (e.g.: methylene blue and Rhodamine B) which results from the special defect structure, better absorption of visible light and larger specific surface area. It follows that Zr{sub 0.8}Ho{sub 0.2}O{sub 2??} nano-crystals are a new kind of visible-light-responsive photocatalysts with better prospects in conversion and utilization of solar energy. Also, the present melting salt assisted route might be generalized to synthesize other AxByOz composite oxide nano-crystals with more complicated structures. - Highlights: • Ho–Zr–O nano-composite with controllable composition and defects has been obtained. • Diversified defect forms of products lead to the different visible light absorption. • Zr{sub 0.8}Ho{sub 0.2}O{sub 2??} nano-crystals have excellent photocatalytic activities.

Du, Weimin, E-mail: duweimin75@gmail.com [College of Chemistry and Chemical Engineering, Anyang Normal University, Anyang, Henan 455000 (China); Zhao, Guoyan; Chang, Hongxun; Shi, Fei; Zhu, Zhaoqiang [College of Chemistry and Chemical Engineering, Anyang Normal University, Anyang, Henan 455000 (China); Qian, Xuefeng [School of Chemistry and Chemical Technology, Shanghai Jiao Tong University, Shanghai 200240 (China)

2013-09-15T23:59:59.000Z

497

Effects of the Combination of Microfracture and Self-Assembling Peptide Filling on the Repair of a Clinically Relevant Trochlear Defect in an Equine Model  

E-Print Network [OSTI]

Background: The goal of this study was to test the ability of an injectable self-assembling peptide (KLD) hydrogel, with or without microfracture, to augment articular cartilage defect repair in an equine cartilage defect ...

Barrett, M. F.

498

JOURNAL DE PHYSIQUE Colloque C6, suppliment au no 7, Tome 41, Juillet 1980,page C6-32 Defect properties and ionic transport in layered compounds  

E-Print Network [OSTI]

and migration. 2. Methods employed. - Our studies employ the PLUTO-HADES suite of lattice simulation pro- grams with the benefit of the HADES I11 computer program to calculate the properties of the defective lattice. The defect

Paris-Sud XI, Université de

499

Fracture resistance of welded thick-walled high-pressure vessels in power plants. Report No. 1. Statistical analysis of defects and fracture resistance of vessel materials  

Science Journals Connector (OSTI)

1. Given the current technology for making and constructing 440- and 1000-MW power plants, the limiting defect s...

I. V. Gorynin; V. A. Ignatov; Yu. I. Zvezdin; B. T. Timofeev…

1985-11-01T23:59:59.000Z

500

Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation  

SciTech Connect (OSTI)

The effects of irradiation by F, P, and PF{sub 4} on optical properties of GaN were studied experimentally and by atomistic simulations. Additionally, the effect of Ag was studied by simulation. The irradiation energy was 0.6?keV/amu for all projectiles. The measured photoluminescence (PL) decay time was found to be decreasing faster when irradiation was done by molecular ion compared to light ion irradiation. The PL decay time change is connected with the types of defect produced by different projectiles. Simulation results show that the light ions mainly produce isolated point defects while molecular and heavy ions produce clusters of point defects. The total amount of defects produced by the PF{sub 4} projectile was found to be very close to the sum of all defects produced in five individual cascades started by one P and four F single ions. This and the similar depth profiles of damage produced by molecular and light ion irradiations suggest that the defect clusters are one of the important reasons for fast PL decay. Moreover, the simulations of irradiation by Ag ions, whose mass is close to the mass of the PF{sub 4} molecule, showed that the produced defects are clustering in even bigger conglomerates compared to PF{sub 4} case. The latter has a tendency to split in the pre-surface region, reducing on average the density of the collision cascade.

Ullah, M. W., E-mail: mohammad.ullah@helsinki.fi; Kuronen, A.; Nordlund, K.; Djurabekova, F. [Department of Physics, University of Helsinki, P.O. Box 64, FIN 00014 (Finland); Karaseov, P. A.; Karabeshkin, K. V.; Titov, A. I. [Department of Physical Electronics, St. Petersburg State Polytechnic University, St. Petersburg (Russian Federation)

2013-11-14T23:59:59.000Z