National Library of Energy BETA

Sample records for lithography mask defects

  1. Defect tolerant transmission lithography mask

    DOE Patents [OSTI]

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  2. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Investigating Extreme Ultraviolet Lithography Mask Defects Print Wednesday, 28 July 2010 00:00 Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using

  3. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  4. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  5. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  6. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  7. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  8. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  9. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    blemishes. In lithography, the complex process used to create computer chips, a six-inch glass plate called a mask carries one layer of a circuit pattern-the image of which is...

  10. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Tchikoulaeva, and C. Holfeld, "Actinic imaging of native and programmed defects on a full-field mask," Proc. SPIE 7636, 76361A (2010). ALS Science Highlight 213 ALSNews Vol. 311

  11. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... La Fontaine, A. Tchikoulaeva, and C. Holfeld, "Actinic imaging of native and programmed defects on a full-field mask," Proc. SPIE 7636, 76361A (2010). ALS Science Highlight 213

  12. Defect tolerant transmission lithography mask (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Structural imperfections and defects in the coating have negligible effect on the aerial ... the phase defect problem, and is independent of the thermal load during exposure. ...

  13. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the size of this defect, which appears as a dark line surrounded by a transparent halo. Actinic inspection with the AIT shows that the halo is completely opaque to EUV. This...

  14. Printability and inspectability of programmed pit defects on teh masks in EUV lithography

    SciTech Connect (OSTI)

    Kang, I.-Y.; Seo, H.-S.; Ahn, B.-S.; Lee, D.-G.; Kim, D.; Huh, S.; Koh, C.-W.; Cha, B.; Kim, S.-S.; Cho, H.-K.; Mochi, I.; Goldberg, K. A.

    2010-03-12

    Printability and inspectability of phase defects in ELlVL mask originated from substrate pit were investigated. For this purpose, PDMs with programmed pits on substrate were fabricated using different ML sources from several suppliers. Simulations with 32-nm HP L/S show that substrate pits with below {approx}20 nm in depth would not be printed on the wafer if they could be smoothed by ML process down to {approx}1 nm in depth on ML surface. Through the investigation of inspectability for programmed pits, minimum pit sizes detected by KLA6xx, AIT, and M7360 depend on ML smoothing performance. Furthermore, printability results for pit defects also correlate with smoothed pit sizes. AIT results for pattemed mask with 32-nm HP L/S represents that minimum printable size of pits could be {approx}28.3 nm of SEVD. In addition, printability of pits became more printable as defocus moves to (-) directions. Consequently, printability of phase defects strongly depends on their locations with respect to those of absorber patterns. This indicates that defect compensation by pattern shift could be a key technique to realize zero printable phase defects in EUVL masks.

  15. Method to repair localized amplitude defects in a EUV lithography mask blank

    DOE Patents [OSTI]

    Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Chapman, Henry N.

    2005-11-22

    A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.

  16. Inspection of lithographic mask blanks for defects

    DOE Patents [OSTI]

    Sommargren, Gary E.

    2001-01-01

    A visible light method for detecting sub-100 nm size defects on mask blanks used for lithography. By using optical heterodyne techniques, detection of the scattered light can be significantly enhanced as compared to standard intensity detection methods. The invention is useful in the inspection of super-polished surfaces for isolated surface defects or particulate contamination and in the inspection of lithographic mask or reticle blanks for surface defects or bulk defects or for surface particulate contamination.

  17. Phase measurements of EUV mask defects

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine; Benk, Markus P.; Goldberg, Kenneth A.; Neureuther, Andrew R.; Naulleau, Patrick P.; Waller, Laura

    2015-02-22

    Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than themore » conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.« less

  18. Etched-multilayer phase shifting masks for EUV lithography

    DOE Patents [OSTI]

    Chapman, Henry N.; Taylor, John S.

    2005-04-05

    A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

  19. Method and apparatus for inspecting reflection masks for defects

    DOE Patents [OSTI]

    Bokor, Jeffrey; Lin, Yun

    2003-04-29

    An at-wavelength system for extreme ultraviolet lithography mask blank defect detection is provided. When a focused beam of wavelength 13 nm is incident on a defective region of a mask blank, three possible phenomena can occur. The defect will induce an intensity reduction in the specularly reflected beam, scatter incoming photons into an off-specular direction, and change the amplitude and phase of the electric field at the surface which can be monitored through the change in the photoemission current. The magnitude of these changes will depend on the incident beam size, and the nature, extent and size of the defect. Inspection of the mask blank is performed by scanning the mask blank with 13 nm light focused to a spot a few .mu.m in diameter, while measuring the reflected beam intensity (bright field detection), the scattered beam intensity (dark-field detection) and/or the change in the photoemission current.

  20. Vitreous carbon mask substrate for X-ray lithography

    DOE Patents [OSTI]

    Aigeldinger, Georg; Skala, Dawn M.; Griffiths, Stewart K.; Talin, Albert Alec; Losey, Matthew W.; Yang, Chu-Yeu Peter

    2009-10-27

    The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

  1. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tool The AIT is the world's highest-performing EUV microscope dedicated to photomask research. It operates on bend-magnet Beamline 11.3.2 at the Advanced Light Source, Lawrence...

  2. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    At the center of the viewable 30-micron region, the aberration-corrected "sweet spot" covers 5 to 8 microns. The AIT team has developed methods to optimize the alignment of the ...

  3. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

    SciTech Connect (OSTI)

    Jha, Smita; Liu, C.-C.; Nealey, P. F.; Kuech, T. F.; Kuan, T. S.; Babcock, S. E.; Park, J. H.; Mawst, L. J.

    2009-08-10

    Defect reduction in the large lattice mismatched system of GaSb on GaAs, {approx}7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of {approx}20 nm holes on {approx}40 nm centers in a 20 nm SiO{sub 2} layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO{sub 2} layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.

  4. EUVL Mask Blank Repair

    SciTech Connect (OSTI)

    Barty, A; Mirkarimi, P; Stearns, D G; Sweeney, D; Chapman, H N; Clift, M; Hector, S; Yi, M

    2002-05-22

    EUV mask blanks are fabricated by depositing a reflective Mo/Si multilayer film onto super-polished substrates. Small defects in this thin film coating can significantly alter the reflected field and introduce defects in the printed image. Ideally one would want to produce defect-free mask blanks; however, this may be very difficult to achieve in practice. One practical way to increase the yield of mask blanks is to effectively repair multilayer defects, and to this effect they present two complementary defect repair strategies for use on multilayer-coated EUVL mask blanks. A defect is any area on the mask which causes unwanted variations in EUV dose in the aerial image obtained in a printing tool, and defect repair is correspondingly defined as any strategy that renders a defect unprintable during exposure. The term defect mitigation can be adopted to describe any strategy which renders a critical defect non-critical when printed, and in this regard a non-critical defect is one that does not adversely affect device function. Defects in the patterned absorber layer consist of regions where metal, typically chrome, is unintentionally added or removed from the pattern leading to errors in the reflected field. There currently exists a mature technology based on ion beam milling and ion beam assisted deposition for repairing defects in the absorber layer of transmission lithography masks, and it is reasonable to expect that this technology will be extended to the repair of absorber defects in EUVL masks. However, techniques designed for the repair of absorber layers can not be directly applied to the repair of defects in the mask blank, and in particular the multilayer film. In this paper they present for the first time a new technique for the repair of amplitude defects as well as recent results on the repair of phase defects.

  5. Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns

    DOE Patents [OSTI]

    Hau-Riege, Stefan Peter

    2007-05-01

    The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

  6. Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.

    2004-11-23

    A method is provided for repairing defects in a multilayer coating layered onto a reticle blank used in an extreme ultraviolet lithography (EUVL) system. Using high lateral spatial resolution, energy is deposited in the multilayer coating in the vicinity of the defect. This can be accomplished using a focused electron beam, focused ion beam or a focused electromagnetic radiation. The absorbed energy will cause a structural modification of the film, producing a localized change in the film thickness. The change in film thickness can be controlled with sub-nanometer accuracy by adjusting the energy dose. The lateral spatial resolution of the thickness modification is controlled by the localization of the energy deposition. The film thickness is adjusted locally to correct the perturbation of the reflected field. For example, when the structural modification is a localized film contraction, the repair of a defect consists of flattening a mound or spreading out the sides of a depression.

  7. Method for the manufacture of phase shifting masks for EUV lithography

    DOE Patents [OSTI]

    Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Barty, Anton

    2006-04-04

    A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

  8. Context-based automated defect classification system using multiple morphological masks

    DOE Patents [OSTI]

    Gleason, Shaun S.; Hunt, Martin A.; Sari-Sarraf, Hamed

    2002-01-01

    Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

  9. Maskless, reticle-free, lithography

    DOE Patents [OSTI]

    Ceglio, Natale M. (Livermore, CA); Markle, David A. (Saratoga, CA)

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

  10. Maskless, reticle-free, lithography

    DOE Patents [OSTI]

    Ceglio, N.M.; Markle, D.A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

  11. VUV lithography

    DOE Patents [OSTI]

    George, E.V.; Oster, Y.; Mundinger, D.C.

    1990-12-25

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

  12. VUV lithography

    DOE Patents [OSTI]

    George, Edward V.; Oster, Yale; Mundinger, David C.

    1990-01-01

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

  13. Defect Mask Encoder (DME) for a Content-Based Image Retrieval System

    Energy Science and Technology Software Center (OSTI)

    2002-10-08

    With the proliferation and accessibility of web-based Internet sites for the posting and viewing of various forms of data and information, digital watermark technology has been created to facilitate the copyright protection of digital imagery even under conditions where the original image may have been modified through image transforms such as compression, rotation, and cropping. This software represents a new application of digital watermarking for the purpose of encoding, storing, and decoding image region segmentationsmore » sometimes referred to as “drawings”, “masks”, or “defect masks”, to facilitate the description and management of large numbers of electronic images in digital libraries or databases. The technology provides a transparent, secure, and space-efficient method for maintaining these masks within digital libraries for purposes such as manufacturing, biomedical, satellite/land use, and other image-intensive applications.« less

  14. Wavelength-specific reflections: A decade of EUV actinic mask inspection research

    SciTech Connect (OSTI)

    Goldberg, Kenneth; Mochi, Iacopo

    2010-12-31

    Mask inspection is essential for the success of any pattern-transfer lithography technology, and EUV Lithography in particular faces unique challenges. EUV masks resonant-reflective multilayer coatings have a narrow, wavelength-specific response that dramatically affects the way that defects appear, or disappear, at various illuminating wavelengths. Furthermore, the ever-shrinking size of 'critical' defects limits the potential effectiveness of DUV inspection techniques over time. Researchers pursuing numerous ways of finding and characterizing defects on EUV masks and have met with varying degrees of success. Their lessons inform the current, urgent exploration to select the most effective techniques for high-volume manufacturing. Ranging from basic research and demonstration experiments to commercial inspection tool prototypes, we survey the recent history of work in this area, including sixteen projects in Europe, Asia, and America. Solutions range from scanning beams to microscopy, dark field imaging to pattern transfer.

  15. Nanoimprint-lithography Patterned Epitaxial Fe Nanowire Arrays...

    Office of Scientific and Technical Information (OSTI)

    epitaxial Fe nanowire arrays on MgO(001) substrates by nanoimprint lithography with a direct metallization of epitaxial materials through a metallic mask, which avoided the...

  16. Plasma formed ion beam projection lithography system

    DOE Patents [OSTI]

    Leung, Ka-Ngo; Lee, Yung-Hee Yvette; Ngo, Vinh; Zahir, Nastaran

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  17. Virtual mask digital electron beam lithography

    DOE Patents [OSTI]

    Baylor, L.R.; Thomas, C.E.; Voelkl, E.; Moore, J.A.; Simpson, M.L.; Paulus, M.J.

    1999-04-06

    Systems and methods for direct-to-digital holography are described. An apparatus includes a laser; a beamsplitter optically coupled to the laser; a reference beam mirror optically coupled to the beamsplitter; an object optically coupled to the beamsplitter, a focusing lens optically coupled to both the reference beam mirror and the object; and a digital recorder optically coupled to the focusing lens. A reference beam is incident upon the reference beam mirror at a non-normal angle, and the reference beam and an object beam are focused by the focusing lens at a focal plane of the digital recorder to form an image. The systems and methods provide advantages in that computer assisted holographic measurements can be made. 5 figs.

  18. Virtual mask digital electron beam lithography

    DOE Patents [OSTI]

    Baylor, Larry R.; Thomas, Clarence E.; Voelkl, Edgar; Moore, James A.; Simpson, Michael L.; Paulus, Michael J.

    1999-01-01

    Systems and methods for direct-to-digital holography are described. An apparatus includes a laser; a beamsplitter optically coupled to the laser; a reference beam mirror optically coupled to the beamsplitter; an object optically coupled to the beamsplitter, a focusing lens optically coupled to both the reference beam mirror and the object; and a digital recorder optically coupled to the focusing lens. A reference beam is incident upon the reference beam mirror at a non-normal angle, and the reference beam and an object beam are focused by the focusing lens at a focal plane of the digital recorder to form an image. The systems and methods provide advantages in that computer assisted holographic measurements can be made.

  19. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

    DOE Patents [OSTI]

    Cardinale, Gregory F.

    2002-01-01

    A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

  20. Dynamic mask for producing uniform or graded-thickness thin films

    DOE Patents [OSTI]

    Folta, James A. (Livermore, CA)

    2006-06-13

    A method for producing single layer or multilayer films with high thickness uniformity or thickness gradients. The method utilizes a moving mask which blocks some of the flux from a sputter target or evaporation source before it deposits on a substrate. The velocity and position of the mask is computer controlled to precisely tailor the film thickness distribution. The method is applicable to any type of vapor deposition system, but is particularly useful for ion beam sputter deposition and evaporation deposition; and enables a high degree of uniformity for ion beam deposition, even for near-normal incidence of deposition species, which may be critical for producing low-defect multilayer coatings, such as required for masks for extreme ultraviolet lithography (EUVL). The mask can have a variety of shapes, from a simple solid paddle shape to a larger mask with a shaped hole through which the flux passes. The motion of the mask can be linear or rotational, and the mask can be moved to make single or multiple passes in front of the substrate per layer, and can pass completely or partially across the substrate.

  1. Mask fabrication process

    DOE Patents [OSTI]

    Cardinale, Gregory F.

    2000-01-01

    A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

  2. Extreme ultraviolet lithography machine

    DOE Patents [OSTI]

    Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  3. Maskless lithography

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Stulen, Richard H. (Livermore, CA)

    1999-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  4. Maskless lithography

    DOE Patents [OSTI]

    Sweatt, W.C.; Stulen, R.H.

    1999-02-09

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.

  5. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (727 Clara St., Livermore, Alameda County, CA 94550); Kubiak, G. D. (475 Maple St., Livermore, Alameda County, CA 94550)

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  6. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E.; Kubiak, Glenn D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  7. Maskless, resistless ion beam lithography

    SciTech Connect (OSTI)

    Ji, Qing

    2003-03-10

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O{sub 2}{sup +}, BF{sub 2}{sup +}, P{sup +} etc., for surface modification and doping applications. With optimized source condition, around 85% of BF{sub 2}{sup +}, over 90% of O{sub 2}{sup +} and P{sup +} have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He{sup +} beam is as high as 440 A/cm{sup 2} {center_dot} Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O{sub 2}{sup +} ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O{sub 2}{sup +} ions with the dose of 10{sup 15} cm{sup -2}. The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features

  8. Graphene nanoribbon superlattices fabricated via He ion lithography

    SciTech Connect (OSTI)

    Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Canado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

    2014-05-12

    Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel defect lines of ?1??m length and ?5?nm width were written to form nanoribbon gratings down to 20?nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ? 2 smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

  9. Coatings on reflective mask substrates

    DOE Patents [OSTI]

    Tong, William Man-Wai; Taylor, John S.; Hector, Scott D.; Mangat, Pawitter J. S.; Stivers, Alan R.; Kofron, Patrick G.; Thompson, Matthew A.

    2002-01-01

    A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

  10. Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

    DOE Patents [OSTI]

    Sweatt, William C.; Christenson, Todd R.

    2005-04-05

    A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

  11. MASK basin

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MASK basin - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs Advanced Nuclear Energy

  12. Photoresist composition for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (Alameda County, CA); Kubiak, G. D. (Alameda County, CA)

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  13. Advances in Lithography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advances in Lithography Advances in Lithography Print Tuesday, 16 December 2014 11:40 Work featured on Applied Optics cover from ALS Beamline 11.3.2. Field-dependent wavefront aberration distribution of an extreme ultraviolet single-lens zone-plate microscope, recovered by the gradient descent algorithm customized for partially coherent imaging and targeted for fast and accurate retrieval. For information, see Yamazoe et al., pp. B34-B43, part of the Applied Optics-JOSA A cohosted feature,

  14. Nanopatterning of ultrananocrystalline diamond thin films via block copolymer lithography.

    SciTech Connect (OSTI)

    Ramanathan, M.; Darling, S. B.; Sumant, A. V.; Auciello, O.

    2010-07-01

    Nanopatterning of diamond surfaces is critical for the development of diamond-based microelectromechanical system/nanoelectromechanical system (MEMS/NEMS), such as resonators or switches. Micro-/nanopatterning of diamond materials is typically done using photolithography or electron beam lithography combined with reactive ion etching (RIE). In this work, we demonstrate a simple process, block copolymer (BCP) lithography, for nanopatterning of ultrananocrystalline diamond (UNCD) films to produce nanostructures suitable for the fabrication of NEMS based on UNCD. In BCP lithography, nanoscale self-assembled polymeric domains serve as an etch mask for pattern transfer. The authors used thin films of a cylinder-forming organic-inorganic BCP, poly(styrene-block-ferrocenyldimethylsilane), PS-b-PFS, as an etch mask on the surface of UNCD films. Orientational control of the etch masking cylindrical PFS blocks is achieved by manipulating the polymer film thickness in concert with the annealing treatment. We have observed that the surface roughness of UNCD layers plays an important role in transferring the pattern. Oxygen RIE was used to etch the exposed areas of the UNCD film underneath the BCP. Arrays of both UNCD posts and wirelike structures have been created using the same starting polymeric materials as the etch mask.

  15. Nanofabrication on unconventional substrates using transferred hard masks

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Luozhou; Bayn, Igal; Lu, Ming; Nam, Chang -Yong; Schroder, Tim; Stein, Aaron; Harris, Nicholas C.; Englund, Dirk

    2015-01-15

    Here, a major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantationmore » are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.« less

  16. Nanofabrication on unconventional substrates using transferred hard masks

    SciTech Connect (OSTI)

    Li, Luozhou; Bayn, Igal; Lu, Ming; Nam, Chang -Yong; Schroder, Tim; Stein, Aaron; Harris, Nicholas C.; Englund, Dirk

    2015-01-15

    Here, a major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantation are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.

  17. Ion beam lithography system

    DOE Patents [OSTI]

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  18. Maskless micro-ion-beam reduction lithography system

    DOE Patents [OSTI]

    Leung, Ka-Ngo; Barletta, William A.; Patterson, David O.; Gough, Richard A.

    2005-05-03

    A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.

  19. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

    DOE Patents [OSTI]

    Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

    1998-06-02

    Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

  20. Membrane projection lithography

    DOE Patents [OSTI]

    Burckel, David Bruce; Davids, Paul S; Resnick, Paul J; Draper, Bruce L

    2015-03-17

    The various technologies presented herein relate to a three dimensional manufacturing technique for application with semiconductor technologies. A membrane layer can be formed over a cavity. An opening can be formed in the membrane such that the membrane can act as a mask layer to the underlying wall surfaces and bottom surface of the cavity. A beam to facilitate an operation comprising any of implantation, etching or deposition can be directed through the opening onto the underlying surface, with the opening acting as a mask to control the area of the underlying surfaces on which any of implantation occurs, material is removed, and/or material is deposited. The membrane can be removed, a new membrane placed over the cavity and a new opening formed to facilitate another implantation, etching, or deposition operation. By changing the direction of the beam different wall/bottom surfaces can be utilized to form a plurality of structures.

  1. Decal transfer lithography

    DOE Patents [OSTI]

    Nuzzo, Ralph G.; Childs, William R.; Motala, Michael J.; Lee, Keon Jae

    2010-02-16

    A method of making a microstructure includes selectively activating a portion of a surface of a silicon-containing elastomer, contacting the activated portion with a substance, and bonding the activated portion and the substance, such that the activated portion of the surface and the substance in contact with the activated portion are irreversibly attached. The selective activation may be accomplished by positioning a mask on the surface of the silicon-containing elastomer, and irradiating the exposed portion with UV radiation.

  2. SYSTEM CONSIDERATIONS FOR MASKLESS LITHOGRAPHY

    SciTech Connect (OSTI)

    Karnowski, Thomas Paul; Joy, David; Allard Jr, Lawrence Frederick; Clonts, Lloyd G

    2004-01-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting problems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-off switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devices are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  3. Method for maskless lithography

    DOE Patents [OSTI]

    Sweatt, William C.; Stulen, Richard H.

    2000-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  4. Programmable imprint lithography template

    DOE Patents [OSTI]

    Cardinale, Gregory F.; Talin, Albert A.

    2006-10-31

    A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

  5. High numerical aperture projection system for extreme ultraviolet projection lithography

    DOE Patents [OSTI]

    Hudyma, Russell M.

    2000-01-01

    An optical system is described that is compatible with extreme ultraviolet radiation and comprises five reflective elements for projecting a mask image onto a substrate. The five optical elements are characterized in order from object to image as concave, convex, concave, convex, and concave mirrors. The optical system is particularly suited for ring field, step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width which effectively minimizes dynamic distortion. The present invention allows for higher device density because the optical system has improved resolution that results from the high numerical aperture, which is at least 0.14.

  6. Method and apparatus for inspecting an EUV mask blank

    DOE Patents [OSTI]

    Goldberg, Kenneth A.

    2005-11-08

    An apparatus and method for at-wavelength EUV mask-blank characterization for inspection of moderate and low spatial frequency coating uniformity using a synchrotron or other source of EUV light. The apparatus provides for rapid, non-destruction, non-contact, at-wavelength qualification of large mask areas, and can be self-calibrating or be calibrated to well-characterized reference samples. It can further check for spatial variation of mask reflectivity or for global differences among masks. The apparatus and method is particularly suited for inspection of coating uniformity and quality and can detect defects in the order of 50 .mu.m and above.

  7. Soft x-ray reduction camera for submicron lithography

    DOE Patents [OSTI]

    Hawryluk, A.M.; Seppala, L.G.

    1991-03-26

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm[sup 2]. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics. 9 figures.

  8. Soft x-ray reduction camera for submicron lithography

    DOE Patents [OSTI]

    Hawryluk, Andrew M.; Seppala, Lynn G.

    1991-01-01

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm.sup.2. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics.

  9. X-ray lithography source

    DOE Patents [OSTI]

    Piestrup, M.A.; Boyers, D.G.; Pincus, C.

    1991-12-31

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

  10. X-ray lithography source

    DOE Patents [OSTI]

    Piestrup, Melvin A.; Boyers, David G.; Pincus, Cary

    1991-01-01

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

  11. Critical illumination condenser for x-ray lithography

    DOE Patents [OSTI]

    Cohen, S.J.; Seppala, L.G.

    1998-04-07

    A critical illumination condenser system is disclosed, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 {micro}m source and requires a magnification of 26. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth. 6 figs.

  12. Critical illumination condenser for x-ray lithography

    DOE Patents [OSTI]

    Cohen, Simon J.; Seppala, Lynn G.

    1998-01-01

    A critical illumination condenser system, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 .mu.m source and requires a magnification of 26.times.. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth.

  13. Interferometric Lithography Patterned Pyrolytic Carbon. (Conference...

    Office of Scientific and Technical Information (OSTI)

    Title: Interferometric Lithography Patterned Pyrolytic Carbon. Abstract not provided. Authors: Burckel, David Bruce ; Polsky, Ronen ; Washburn, Cody M. ; Wheeler, David Roger ; ...

  14. Masked multichannel analyzer

    DOE Patents [OSTI]

    Winiecki, A.L.; Kroop, D.C.; McGee, M.K.; Lenkszus, F.R.

    1984-01-01

    An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

  15. Masked multichannel analyzer

    DOE Patents [OSTI]

    Winiecki, Alan L. (Downers Grove, IL); Kroop, David C. (Columbia, MD); McGee, Marilyn K. (Colorado Springs, CO); Lenkszus, Frank R. (Woodridge, IL)

    1986-01-01

    An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

  16. Extreme-UV lithography system

    DOE Patents [OSTI]

    Replogle, William C.; Sweatt, William C.

    2001-01-01

    A photolithography system that employs a condenser that includes a series of aspheric mirrors on one side of a small, incoherent source of radiation producing a series of beams is provided. Each aspheric mirror images the quasi point source into a curved line segment. A relatively small arc of the ring image is needed by the camera; all of the beams are so manipulated that they all fall onto this same arc needed by the camera. Also, all of the beams are aimed through the camera's virtual entrance pupil. The condenser includes a correcting mirror for reshaping a beam segment which improves the overall system efficiency. The condenser efficiently fills the larger radius ringfield created by today's advanced camera designs. The system further includes (i) means for adjusting the intensity profile at the camera's entrance pupil or (ii) means for partially shielding the illumination imaging onto the mask or wafer. The adjusting means can, for example, change at least one of: (i) partial coherence of the photolithography system, (ii) mask image illumination uniformity on the wafer or (iii) centroid position of the illumination flux in the entrance pupil. A particularly preferred adjusting means includes at least one vignetting mask that covers at least a portion of the at least two substantially equal radial segments of the parent aspheric mirror.

  17. Compact multi-bounce projection system for extreme ultraviolet projection lithography

    DOE Patents [OSTI]

    Hudyma, Russell M.

    2002-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four optical elements providing five reflective surfaces for projecting a mask image onto a substrate. The five optical surfaces are characterized in order from object to image as concave, convex, concave, convex and concave mirrors. The second and fourth reflective surfaces are part of the same optical element. The optical system is particularly suited for ring field step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width, which effectively minimizes dynamic distortion.

  18. Extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C.; Sweeney, Donald W.; Shafer, David; McGuire, James

    2001-01-01

    Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

  19. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Science Highlight Investigating Extreme Ultraviolet Lithography Mask Defects), and the development of ultrahigh-resolution photoresist-a light-sensitive material used to form a...

  20. Sequential Infiltration Synthesis for Enhancing Advanced Lithography |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Argonne National Laboratory Advanced Lithography Technology available for licensing: The invention is a plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. Benefits: The plasma etch resist

  1. Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography

    DOE Patents [OSTI]

    Chapman, Henry N.; Nugent, Keith A.

    2001-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated beam at grazing incidence. The ripple plate comprises a plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  2. Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography

    DOE Patents [OSTI]

    Chapman, Henry N.; Nugent, Keith A.

    2002-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated or converging beam at grazing incidence. The ripple plate comprises a flat or curved plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  3. "A Novel Objective for EUV Microscopy and EUV Lithography" Inventors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Novel Objective for EUV Microscopy and EUV Lithography" Inventors ..--.. Manfred Bitter, Kenneth Hill, Philip Efthimion. This invention is a new x-ray scheme for stigmatic...

  4. Demonstration of electronic pattern switching and 10x pattern demagnification in a maskless micro-ion beam reduction lithography system

    SciTech Connect (OSTI)

    Ngo, V.V.; Akker, B.; Leung, K.N.; Noh, I.; Scott, K.L.; Wilde, S.

    2002-05-31

    A proof-of-principle ion projection lithography (IPL) system called Maskless Micro-ion beam Reduction Lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory (LBNL) for future integrated circuits (ICs) manufacturing and thin film media patterning [1]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [2] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp RF plasma generator, a multi-beamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on PMMA and Shipley UVII-HS resists using 75 keV H+ are presented in this paper. Proof-of-principle electronic pattern switching together with 10x reduction ion optics (using a pattern generator made of nine 50-{micro}m switchable apertures) has been performed and is reported in this paper. In addition, the fabrication of a micro-fabricated pattern generator [3] on an SOI membrane is also presented.

  5. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System

    SciTech Connect (OSTI)

    Jiang, Ximan

    2006-05-18

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

  6. Masked Areas in Shear Peak Statistics: A Forward Modeling Approach...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Masked Areas in Shear Peak Statistics: A Forward Modeling Approach Citation Details In-Document Search Title: Masked Areas in Shear Peak Statistics: A Forward ...

  7. X-ray lithography using holographic images

    DOE Patents [OSTI]

    Howells, Malcolm R.; Jacobsen, Chris

    1995-01-01

    A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

  8. Microphotonic parabolic light directors fabricated by two-photon lithography

    SciTech Connect (OSTI)

    Atwater, Jackson H; Spinelli, P.; Kosten, Emily D; Parsons, J.; Van Lare, C; Van de Groep, J; Garcia de Abajo, J.; Polman, Albert; Atwater, Harry A.

    2011-01-01

    We have fabricated microphotonic parabolic light directors using two-photon lithography, thin-film processing, and aperture formation by focused ion beam lithography. Optical transmission measurements through upright parabolic directors 22 ?m high and 10 ?m in diameter exhibit strong beam directivity with a beam divergence of 5.6, in reasonable agreement with ray-tracing and full-field electromagnetic simulations. The results indicate the suitability of microphotonic parabolic light directors for producing collimated beams for applications in advanced solar cell and light-emitting diode designs.

  9. Free electron laser with masked chicane

    DOE Patents [OSTI]

    Nguyen, Dinh C. (Los Alamos, NM); Carlsten, Bruce E. (Los Alamos, NM)

    1999-01-01

    A free electron laser (FEL) is provided with an accelerator for outputting electron beam pulses; a buncher for modulating each one of the electron beam pulses to form each pulse into longitudinally dispersed bunches of electrons; and a wiggler for generating coherent light from the longitudinally dispersed bunches of electrons. The electron beam buncher is a chicane having a mask for physically modulating the electron beam pulses to form a series of electron beam bunches for input to the wiggler. In a preferred embodiment, the mask is located in the chicane at a position where each electron beam pulse has a maximum dispersion.

  10. Carbon contamination topography analysis of EUV masks

    SciTech Connect (OSTI)

    Fan, Y.-J.; Yankulin, L.; Thomas, P.; Mbanaso, C.; Antohe, A.; Garg, R.; Wang, Y.; Murray, T.; Wuest, A.; Goodwin, F.; Huh, S.; Cordes, A.; Naulleau, P.; Goldberg, K. A.; Mochi, I.; Gullikson, E.; Denbeaux, G.

    2010-03-12

    The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.

  11. Diffractive element in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C.; Ray-Chaudhurl, Avijit K.

    2000-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  12. Diffractive element in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C.; Ray-Chaudhuri, Avijit

    2001-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  13. Ultratech Develops an Improved Lithography Tool for LED Wafer Manufacturing

    Broader source: Energy.gov [DOE]

    Ultratech modified an existing lithography tool used for semiconductor manufacturing to better meet the cost and performance targets of the high-brightness LED manufacturing industry. The goal was to make the equipment compatible with the wide range of substrate diameters and thicknesses prevalent in the industry while reducing the capital cost and the overall cost of ownership (COO).

  14. Condenser for extreme-UV lithography with discharge source

    DOE Patents [OSTI]

    Sweatt, William C.; Kubiak, Glenn D.

    2001-01-01

    Condenser system, for use with a ringfield camera in projection lithography, employs quasi grazing-incidence collector mirrors that are coated with a suitable reflective metal such as ruthenium to collect radiation from a discharge source to minimize the effect of contaminant accumulation on the collecting mirrors.

  15. Translational-symmetry alternating phase shifting mask grating mark used in a linear measurement model of lithographic projection lens aberrations

    SciTech Connect (OSTI)

    Qiu Zicheng; Wang Xiangzhao; Bi Qunyu; Yuan Qiongyan; Peng Bo; Duan Lifeng

    2009-07-01

    A linear measurement model of lithographic projection lens aberrations is studied numerically based on the Hopkins theory of partially-coherent imaging and positive resist optical lithography (PROLITH) simulation. In this linearity model, the correlation between the mark's structure and its sensitivities to aberrations is analyzed. A method to design a mark with high sensitivity is proved and declared. By use of this method, a translational-symmetry alternating phase shifting mask (Alt-PSM) grating mark is redesigned with all of the even orders, {+-}3rd and {+-}5th order diffraction light missing. In the evaluation simulation, the measurement accuracies of aberrations prove to be enhanced apparently by use of the redesigned mark instead of the old ones.

  16. Multi-part mask for implanting workpieces

    DOE Patents [OSTI]

    Webb, Aaron P.; Carlson, Charles T.

    2016-05-10

    A multi-part mask has a pattern plate, which includes a planar portion that has the desired aperture pattern to be used during workpiece processing. The multi-part mask also has a mounting frame, which is used to hold the pattern plate. Prior to assembly, the pattern plate has an aligning portion, which has one or more holes through which reusable alignment pins are inserted. These alignment pins enter kinematic joints disposed on the mounting frame, which serve to precisely align the pattern plate to the mounting frame. After the pattern plate has been secured to the mounting frame, the aligning portion can be detached from the pattern plate. The alignment pins can be reused at a later time. In some embodiments, the pattern plate can later be removed from the mounting frame, so that the mounting frame may be reused.

  17. Dose masking feature for BNCT radiotherapy planning

    DOE Patents [OSTI]

    Cook, Jeremy L.; Wessol, Daniel E.; Wheeler, Floyd J.

    2000-01-01

    A system for displaying an accurate model of isodoses to be used in radiotherapy so that appropriate planning can be performed prior to actual treatment on a patient. The nature of the simulation of the radiotherapy planning for BNCT and Fast Neutron Therapy, etc., requires that the doses be computed in the entire volume. The "entire volume" includes the patient and beam geometries as well as the air spaces in between. Isodoses derived from the computed doses will therefore extend into the air regions between the patient and beam geometries and thus depict the unrealistic possibility that radiation deposition occurs in regions containing no physical media. This problem is solved by computing the doses for the entire geometry and then masking the physical and air regions along with the isodose contours superimposed over the patient image at the corresponding plane. The user is thus able to mask out (remove) the contour lines from the unwanted areas of the image by selecting the appropriate contour masking region from the raster image.

  18. Low Cost Lithography Tool for High Brightness LED Manufacturing

    SciTech Connect (OSTI)

    Andrew Hawryluk; Emily True

    2012-06-30

    The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

  19. Resolution Limits of Electron-beam Lithography Pushed Towards the Atomic

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scale | MIT-Harvard Center for Excitonics Resolution Limits of Electron-beam Lithography Pushed Towards the Atomic Scale 10.22.2013

  20. Low thermal distortion extreme-UV lithography reticle

    DOE Patents [OSTI]

    Gianoulakis, Steven E.; Ray-Chaudhuri, Avijit K.

    2001-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  1. Low thermal distortion extreme-UV lithography reticle

    DOE Patents [OSTI]

    Gianoulakis, Steven E.; Ray-Chaudhuri, Avijit K.

    2002-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  2. Low thermal distortion Extreme-UV lithography reticle and method

    DOE Patents [OSTI]

    Gianoulakis, Steven E.; Ray-Chaudhuri, Avijit K.

    2002-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  3. EUV Dark-Field Microscopy for Defect Inspection

    SciTech Connect (OSTI)

    Juschkin, L.; Maryasov, A.; Herbert, S.; Aretz, A.; Bergmann, K.; Lebert, R.

    2011-09-09

    An actinic EUV microscope for defect detection on mask blanks for operation in dark field using a table-top discharge-produced plasma source has been developed. Several test structures (pits and bumps) on multilayer mirrors were investigated by our Schwarzschild objective-based EUV microscope at 13.5-nm wavelength and then characterized with an atomic force microscope. Possible defect-detection limits with large field of view and moderate magnification are discussed in terms of required irradiation dose and system performance.

  4. Micropatterning of metal substrate by adhesive force lithography

    SciTech Connect (OSTI)

    Seo, Soon-min; Park, Jeong-yong; Lee, Hong H.

    2005-03-28

    We introduce adhesive force lithography (AFL), a detachment-based method for patterning metal surface. In this method, all the polymer layer except for the desired pattern gets lifted up from the metal surface. The craze microstructure unique to thin polymer films on the order of 10{sup 2} nm is utilized for this AFL along with a difference in adhesive force at two interfaces. Poly(urethaneacrylate) mold, which has a high enough work of adhesion with polymer, makes AFL effective. This technique is purely additive, fast ({approx}10 s contact time), and applicable to large area patterning (10 cmx10 cm)

  5. Self-cleaning optic for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Klebanoff, Leonard E.; Stulen, Richard H.

    2003-12-16

    A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

  6. Low-cost method for producing extreme ultraviolet lithography optics

    DOE Patents [OSTI]

    Folta, James A.; Montcalm, Claude; Taylor, John S.; Spiller, Eberhard A.

    2003-11-21

    Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

  7. Gray scale x-ray mask

    DOE Patents [OSTI]

    Morales, Alfredo M.; Gonzales, Marcela

    2006-03-07

    The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

  8. Phase-shifting point diffraction interferometer mask designs

    DOE Patents [OSTI]

    Goldberg, Kenneth Alan

    2001-01-01

    In a phase-shifting point diffraction interferometer, different image-plane mask designs can improve the operation of the interferometer. By keeping the test beam window of the mask small compared to the separation distance between the beams, the problem of energy from the reference beam leaking through the test beam window is reduced. By rotating the grating and mask 45.degree., only a single one-dimensional translation stage is required for phase-shifting. By keeping two reference pinholes in the same orientation about the test beam window, only a single grating orientation, and thus a single one-dimensional translation stage, is required. The use of a two-dimensional grating allows for a multiplicity of pinholes to be used about the pattern of diffracted orders of the grating at the mask. Orientation marks on the mask can be used to orient the device and indicate the position of the reference pinholes.

  9. Lithography process for patterning HgI2 photonic devices

    DOE Patents [OSTI]

    Mescher, Mark J.; James, Ralph B.; Hermon, Haim

    2004-11-23

    A photolithographic process forms patterns on HgI.sub.2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI.sub.2 surfaces and for producing trenches in HgI.sub.2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.

  10. Holographic illuminator for synchrotron-based projection lithography systems

    DOE Patents [OSTI]

    Naulleau, Patrick P.

    2005-08-09

    The effective coherence of a synchrotron beam line can be tailored to projection lithography requirements by employing a moving holographic diffuser and a stationary low-cost spherical mirror. The invention is particularly suited for use in an illuminator device for an optical image processing system requiring partially coherent illumination. The illuminator includes: (1) a synchrotron source of coherent or partially coherent radiation which has an intrinsic coherence that is higher than the desired coherence, (2) a holographic diffuser having a surface that receives incident radiation from said source, (3) means for translating the surface of the holographic diffuser in two dimensions along a plane that is parallel to the surface of the holographic diffuser wherein the rate of the motion is fast relative to integration time of said image processing system; and (4) a condenser optic that re-images the surface of the holographic diffuser to the entrance plane of said image processing system.

  11. Development of ion sources for ion projection lithography

    SciTech Connect (OSTI)

    Lee, Y.; Gough, R.A.; Kunkel, W.B.; Leung, K.N.; Perkins, L.T.

    1996-05-01

    Multicusp ion sources are capable of generating ion beams with low axial energy spread as required by the Ion Projection Lithography (IPL). Longitudinal ion energy spread has been studied in two different types of plasma discharge: the filament discharge ion source characterized by its low axial energy spread, and the RF-driven ion source characterized by its long source lifetime. For He{sup +} ions, longitudinal ion energy spreads of 1-2 eV were measured for a filament discharge multicusp ion source which is within the IPL device requirements. Ion beams with larger axial energy spread were observed in the RF-driven source. A double-chamber ion source has been designed which combines the advantages of low axial energy spread of the filament discharge ion source with the long lifetime of the RF-driven source. The energy spread of the double chamber source is lower than that of the RF-driven source.

  12. Method for the protection of extreme ultraviolet lithography optics

    DOE Patents [OSTI]

    Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

    2010-06-22

    A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

  13. Molecular pathways for defect annihilation in directed self-assembly.

    SciTech Connect (OSTI)

    Hur, Su-Mi; Thapar, Vikram; Ramirez-Hernandez, Abelardo; Khaira, Gurdaman S.; Segal-Peretz, Tamar; Rincon-Delgadillo, Paulina A.; Li, Weihua; Muller, Marcus; Nealey, Paul F.; de Pablo, Juan J.

    2015-11-17

    Over the last few years, the directed self-assembly of block copolymers by surface patterns has transitioned from academic curiosity to viable contender for commercial fabrication of next-generation nanocircuits by lithography. Recently, it has become apparent that kinetics, and not only thermodynamics, plays a key role for the ability of a polymeric material to self-assemble into a perfect, defect-free ordered state. Perfection, in this context, implies not more than one defect, with characteristic dimensions on the order of 5 nm, over a sample area as large as 100 cm2. In this work, we identify the key pathways and the corresponding free-energy barriers for eliminating defects, and we demonstrate that an extraordinarily large thermodynamic driving force is not necessarily sufficient for their removal. By adopting a concerted computational and experimental approach, we explain the molecular origins of these barriers, how they depend on material characteristics, and we propose strategies designed to over-come them. The validity of our conclusions for industrially-relevant patterning processes is established by relying on instruments and assembly lines that are only available at state-of-the-art fabrication facilities and, through this confluence of fundamental and applied research, we are able to discern the evolution of morphology at the smallest relevant length scales - a handful of nanometers -, and present a view of defect annihilation in directed self-assembly at an unprecedented level of detail.

  14. Mask-Assisted Seeded Growth of Segmented Metallic Heteronanostructures

    SciTech Connect (OSTI)

    Crane, Cameron C.; Tao, Jing; Wang, Feng; Zhu, Yimei; Chen, Jingyi

    2014-12-04

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclines to grow vertically into branched topology on Au. Without removal of the SiO₂ mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.

  15. Mask-Assisted Seeded Growth of Segmented Metallic Heteronanostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Crane, Cameron C.; Tao, Jing; Wang, Feng; Zhu, Yimei; Chen, Jingyi

    2014-12-04

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclinesmore » to grow vertically into branched topology on Au. Without removal of the SiO₂ mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.« less

  16. Mask-Assisted Seeded Growth of Segmented Metallic Heteronanostructures

    SciTech Connect (OSTI)

    Crane, Cameron C.; Tao, Jing; Wang, Feng; Zhu, Yimei; Chen, Jingyi

    2014-12-04

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclines to grow vertically into branched topology on Au. Without removal of the SiO? mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.

  17. Bubble masks for time-encoded imaging of fast neutrons.

    SciTech Connect (OSTI)

    Brubaker, Erik; Brennan, James S.; Marleau, Peter; Nowack, Aaron B.; Steele, John; Sweany, Melinda; Throckmorton, Daniel J.

    2013-09-01

    Time-encoded imaging is an approach to directional radiation detection that is being developed at SNL with a focus on fast neutron directional detection. In this technique, a time modulation of a detected neutron signal is induced-typically, a moving mask that attenuates neutrons with a time structure that depends on the source position. An important challenge in time-encoded imaging is to develop high-resolution two-dimensional imaging capabilities; building a mechanically moving high-resolution mask presents challenges both theoretical and technical. We have investigated an alternative to mechanical masks that replaces the solid mask with a liquid such as mineral oil. Instead of fixed blocks of solid material that move in pre-defined patterns, the oil is contained in tubing structures, and carefully introduced air gaps-bubbles-propagate through the tubing, generating moving patterns of oil mask elements and air apertures. Compared to current moving-mask techniques, the bubble mask is simple, since mechanical motion is replaced by gravity-driven bubble propagation; it is flexible, since arbitrary bubble patterns can be generated by a software-controlled valve actuator; and it is potentially high performance, since the tubing and bubble size can be tuned for high-resolution imaging requirements. We have built and tested various single-tube mask elements, and will present results on bubble introduction and propagation as a function of tubing size and cross-sectional shape; real-time bubble position tracking; neutron source imaging tests; and reconstruction techniques demonstrated on simple test data as well as a simulated full detector system.

  18. Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics

    DOE Patents [OSTI]

    Ellingson, W.A.; Brada, M.P.

    1995-06-20

    A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser`s wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known ``feature masks`` of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects. 29 figs.

  19. Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics

    DOE Patents [OSTI]

    Ellingson, William A.; Brada, Mark P.

    1995-01-01

    A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser's wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known "feature masks" of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects.

  20. Ga Lithography in Sputtered Niobium for Superconductive Micro and Nanowires.

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Henry, Michael David; Lewis, Rupert M.; Wolfley, Steven L.; Monson, Todd C.

    2014-08-18

    This work demonstrates the use of FIB implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12 nm deep with a 14 nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10 um by and 10 um and 100 um by 100 um, demonstrate that doses above than 7.5 x 1015 cm-2 at 30 kV provide adequate mask protection for a 205 nm thick, sputtered Nb film. The resolution of this dry lithographic techniquemore » is demonstrated by fabrication of nanowires 75 nm wide by 10 um long connected to 50 um wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature, Tc =7.7 K, was measured using MPMS. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.« less

  1. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-08-18

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5??10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  2. Micrograph Defect Indentifier

    Energy Science and Technology Software Center (OSTI)

    2012-10-11

    Micrograph image defect identifier is a computer code written in MATLAB to automatically detect defects on scanned image of thin film membrane samples employing three methods: global threshold, line detection and k-means segmentation. The results are segmented binary images of thin film with defects identified. Defect area fractions are also calculated. The users may use default functional variables calculated by program, or input preferred value from user’s experience. This will empower the user to processingmore » the image with more flexibility. MDI was designed to identify defects of thin films fabricated. It is also used in phase identification, porosity study on SEM, OM, TEM images. Different methods were applied in this software package: global threshold, line detection and k-means segmentation.« less

  3. Coma measurement by use of an alternating phase-shifting mask mark with a specific phase width

    SciTech Connect (OSTI)

    Qiu Zicheng; Wang Xiangzhao; Yuan Qiongyan; Wang Fan

    2009-01-10

    The correlation between the coma sensitivity of the alternating phase-shifting mask (Alt-PSM) mark and the mark's structure is studied based on the Hopkins theory of partially coherent imaging and positive resist optical lithography (PROLITH) simulation. It is found that an optimized Alt-PSM mark with its phase width being two-thirds its pitch has a higher sensitivity to coma than Alt-PSM marks with the same pitch and the different phase widths. The pitch of the Alt-PSM mark is also optimized by PROLITH simulation, and the structure of p=1.92{lambda}/NA and pw=2p/3 proves to be with the highest sensitivity. The optimized Alt-PSM mark is used as a measurement mark to retrieve coma aberration from the projection optics in lithographic tools. In comparison with an ordinary Alt-PSM mark with its phase width being a half its pitch, the measurement accuracies of Z7 and Z14 apparently increase.

  4. Four-mirror extreme ultraviolet (EUV) lithography projection system

    DOE Patents [OSTI]

    Cohen, Simon J; Jeong, Hwan J; Shafer, David R

    2000-01-01

    The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures. The convex spherical mirror is positioned on the optical axis, and has a substantially or perfectly spherical shape. The spherical concave mirror is positioned substantially on the opposite side of the optical axis from the hyperbolic and elliptical mirrors. Because it is positioned off-axis to a degree, the spherical concave mirror has some asphericity to counter aberrations. The spherical concave mirror forms a relatively large, uniform field on the wafer substrate. The mirrors can be tilted or decentered slightly to achieve further increase in the field size.

  5. Fundamentals of embossing nanoimprint lithography in polymer substrates.

    SciTech Connect (OSTI)

    Simmons, Blake Alexander; King, William P.

    2011-02-01

    The convergence of micro-/nano-electromechanical systems (MEMS/NEMS) and biomedical industries is creating a need for innovation and discovery around materials, particularly in miniaturized systems that use polymers as the primary substrate. Polymers are ubiquitous in the microelectronics industry and are used as sensing materials, lithography tools, replication molds, microfluidics, nanofluidics, and biomedical devices. This diverse set of operational requirements dictates that the materials employed must possess different properties in order to reduce the cost of production, decrease the scale of devices to the appropriate degree, and generate engineered devices with new functional properties at cost-competitive levels of production. Nanoscale control of polymer deformation at a massive scale would enable breakthroughs in all of the aforementioned applications, but is currently beyond the current capabilities of mass manufacturing. This project was focused on developing a fundamental understanding of how polymers behave under different loads and environments at the nanoscale in terms of performance and fidelity in order to fill the most critical gaps in our current knowledgebase on this topic.

  6. X-ray mask and method for providing same

    DOE Patents [OSTI]

    Morales, Alfredo M. (Pleasanton, CA); Skala, Dawn M. (Fremont, CA)

    2004-09-28

    The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.

  7. X-ray mask and method for providing same

    DOE Patents [OSTI]

    Morales, Alfredo M.; Skala, Dawn M.

    2002-01-01

    The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.

  8. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Shedding Light on Nanocrystal Defects Print Thursday, 20 June 2013 10:41 Nanocrystals have been the focus of much scientific interest lately,...

  9. Automated Defect Classification (ADC)

    Energy Science and Technology Software Center (OSTI)

    1998-01-01

    The ADC Software System is designed to provide semiconductor defect feature analysis and defect classification capabilities. Defect classification is an important software method used by semiconductor wafer manufacturers to automate the analysis of defect data collected by a wide range of microscopy techniques in semiconductor wafer manufacturing today. These microscopies (e.g., optical bright and dark field, scanning electron microscopy, atomic force microscopy, etc.) generate images of anomalies that are induced or otherwise appear on wafermore » surfaces as a result of errant manufacturing processes or simple atmospheric contamination (e.g., airborne particles). This software provides methods for analyzing these images, extracting statistical features from the anomalous regions, and applying supervised classifiers to label the anomalies into user-defined categories.« less

  10. Lithography with MeV Energy Ions for Biomedical Applications: Accelerator Considerations

    SciTech Connect (OSTI)

    Sangyuenyongpipat, S.; Whitlow, H. J.; Nakagawa, S. T.; Yoshida, E.

    2009-03-10

    MeV ion beam lithographies are very powerful techniques for 3D direct writing in positive or negative photoresist materials. Nanometer-scale rough structures, or clear areas with straight vertical sidewalls as thin as a few 10's of nm in a resist of a few nm to 100 {mu}m thickness can be made. These capabilities are particularly useful for lithography in cellular- and sub-cellular level biomedical research and technology applications. It can be used for tailor making special structures such as optical waveguides, biosensors, DNA sorters, spotting plates, systems for DNA, protein and cell separation, special cell-growth substrates and microfluidic lab-on-a-chip devices. Furthermore MeV ion beam lithography can be used for rapid prototyping, and also making master stamps and moulds for mass production by hot embossing and nanoimprint lithography. The accelerator requirements for three different high energy ion beam lithography techniques are overviewed. We consider the special requirements placed on the accelerator and how this is achieved for a commercial proton beam writing tool.

  11. System for generating two-dimensional masks from a three-dimensional model using topological analysis

    DOE Patents [OSTI]

    Schiek, Richard

    2006-06-20

    A method of generating two-dimensional masks from a three-dimensional model comprises providing a three-dimensional model representing a micro-electro-mechanical structure for manufacture and a description of process mask requirements, reducing the three-dimensional model to a topological description of unique cross sections, and selecting candidate masks from the unique cross sections and the cross section topology. The method further can comprise reconciling the candidate masks based on the process mask requirements description to produce two-dimensional process masks.

  12. Fabrication of moth-eye structures on silicon by direct six-beam laser interference lithography

    SciTech Connect (OSTI)

    Xu, Jia; Zhang, Ziang; Weng, Zhankun; Wang, Zuobin Wang, Dapeng

    2014-05-28

    This paper presents a new method for the generation of cross-scale laser interference patterns and the fabrication of moth-eye structures on silicon. In the method, moth-eye structures were produced on a surface of silicon wafer using direct six-beam laser interference lithography to improve the antireflection performance of the material surface. The periodic dot arrays of the moth-eye structures were formed due to the ablation of the irradiance distribution of interference patterns on the wafer surface. The shape, size, and distribution of the moth-eye structures can be adjusted by controlling the wavelength, incidence angles, and exposure doses in a direct six-beam laser interference lithography setup. The theoretical and experimental results have shown that direct six-beam laser interference lithography can provide a way to fabricate cross-scale moth-eye structures for antireflection applications.

  13. Soft X-ray Lithography Beamline at the Siam Photon Laboratory

    SciTech Connect (OSTI)

    Klysubun, P.; Chomnawang, N.; Songsiriritthigul, P.

    2007-01-19

    Construction of a soft x-ray lithography beamline utilizing synchrotron radiation generated by one of the bending magnets at the Siam Photon Laboratory is finished and the beamline is currently in a commissioning period. The beamline was modified from the existing monitoring beamline and is intended for soft x-ray lithographic processing and radiation biological research. The lithography exposure station with a compact one-dimensional scanning mechanism was constructed and assembled in-house. The front-end of the beamline has been modified to allow larger exposure area. The exposure station for studying radiation effects on biological samples will be set up in tandem with the lithography station, with a Mylar window for isolation. Several improvements to both the beamline and the exposure stations, such as improved scanning speed and the ability to adjust the exposure spectrum by means of low-Z filters, are planned and will be implemented in the near future.

  14. Solar panel with interconnects and masking structure, and method

    SciTech Connect (OSTI)

    Gaddy, E.M.; Dominguez, R.

    1991-04-30

    This patent describes a solar panel. It includes: solar cells having radiation absorbing surface and opposed back surfaces; conducting means for interconnecting the solar cells; a transparent superstrate upon one surface of which radiation absorbing surfaces are mounted; and means upon a surface of the transparent superstrate for masking the interconnecting means.

  15. Virtually distortion-free imaging system for large field, high resolution lithography

    DOE Patents [OSTI]

    Hawryluk, A.M.; Ceglio, N.M.

    1993-01-05

    Virtually distortion free large field high resolution imaging is performed using an imaging system which contains large field distortion or field curvature. A reticle is imaged in one direction through the optical system to form an encoded mask. The encoded mask is then imaged back through the imaging system onto a wafer positioned at the reticle position.

  16. Automated real-time detection of defects during machining of ceramics

    DOE Patents [OSTI]

    Ellingson, W.A.; Sun, J.

    1997-11-18

    Apparatus for the automated real-time detection and classification of defects during the machining of ceramic components employs an elastic optical scattering technique using polarized laser light. A ceramic specimen is continuously moved while being machined. Polarized laser light is directed onto the ceramic specimen surface at a fixed position just aft of the machining tool for examination of the newly machined surface. Any foreign material near the location of the laser light on the ceramic specimen is cleared by an air blast. As the specimen is moved, its surface is continuously scanned by the polarized laser light beam to provide a two-dimensional image presented in real-time on a video display unit, with the motion of the ceramic specimen synchronized with the data acquisition speed. By storing known ``feature masks`` representing various surface and sub-surface defects and comparing measured defects with the stored feature masks, detected defects may be automatically characterized. Using multiple detectors, various types of defects may be detected and classified. 14 figs.

  17. Automated real-time detection of defects during machining of ceramics

    DOE Patents [OSTI]

    Ellingson, William A.; Sun, Jiangang

    1997-01-01

    Apparatus for the automated real-time detection and classification of defects during the machining of ceramic components employs an elastic optical scattering technique using polarized laser light. A ceramic specimen is continuously moved while being machined. Polarized laser light is directed onto the ceramic specimen surface at a fixed position just aft of the machining tool for examination of the newly machined surface. Any foreign material near the location of the laser light on the ceramic specimen is cleared by an air blast. As the specimen is moved, its surface is continuously scanned by the polarized laser light beam to provide a two-dimensional image presented in real-time on a video display unit, with the motion of the ceramic specimen synchronized with the data acquisition speed. By storing known "feature masks" representing various surface and sub-surface defects and comparing measured defects with the stored feature masks, detected defects may be automatically characterized. Using multiple detectors, various types of defects may be detected and classified.

  18. X-ray mask and method for making

    DOE Patents [OSTI]

    Morales, Alfredo M.

    2004-10-26

    The present invention describes a method for fabricating an x-ray mask tool which is a contact lithographic mask which can provide an x-ray exposure dose which is adjustable from point-to-point. The tool is useful in the preparation of LIGA plating molds made from PMMA, or similar materials. In particular the tool is useful for providing an ability to apply a graded, or "stepped" x-ray exposure dose across a photosensitive substrate. By controlling the x-ray radiation dose from point-to-point, it is possible to control the development process for removing exposed portions of the substrate; adjusting it such that each of these portions develops at a more or less uniformly rate regardless of feature size or feature density distribution.

  19. Defect mapping system

    DOE Patents [OSTI]

    Sopori, Bhushan L.

    1995-01-01

    Apparatus for detecting and mapping defects in the surfaces of polycrystalline materials in a manner that distinguishes dislocation pits from grain boundaries includes a laser for illuminating a wide spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate rastor mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities.

  20. Defect mapping system

    DOE Patents [OSTI]

    Sopori, B.L.

    1995-04-11

    Apparatus for detecting and mapping defects in the surfaces of polycrystalline materials in a manner that distinguishes dislocation pits from grain boundaries includes a laser for illuminating a wide spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate rastor mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. 20 figures.

  1. ATOMIC FORCE LITHOGRAPHY OF NANO MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING IN AQUEOUS SOLUTIONS

    SciTech Connect (OSTI)

    Torres, R.; Mendez-Torres, A.; Lam, P.

    2011-06-09

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  2. ATOMIC FORCE LITHOGRAPHY OF NANO/MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING OF AQUEOUS SOLUTIONS

    SciTech Connect (OSTI)

    Mendez-Torres, A.; Torres, R.; Lam, P.

    2011-07-15

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  3. Lithography-free large-area metamaterials for stable thermophotovoltaic energy conversion

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Coppens, Zachary J.; Kravchenko, Ivan I.; Valentine, Jason G.

    2016-02-08

    A large-area metamaterial thermal emitter is fabricated using facile, lithography-free techniques. The device is composed of conductive oxides, refractory ceramics, and noble metals and shows stable, selective emission after exposure to 1173 K for 22 h in oxidizing and inert atmospheres. Lastly, the results indicate that the metamaterial can be used to achieve high-performance thermophotovoltaic devices for applications such as portable power generation.

  4. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their...

  5. 2010 Defects in Semiconductors GRC

    SciTech Connect (OSTI)

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  6. Multilayer mirror with enhanced spectral selectivity for the next generation extreme ultraviolet lithography

    SciTech Connect (OSTI)

    Medvedev, V. V. Kruijs, R. W. E. van de; Yakshin, A. E.; Novikova, N. N.; Krivtsun, V. M.; Louis, E.; Bijkerk, F.; MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede ; Yakunin, A. M.

    2013-11-25

    We have demonstrated a hybrid extreme ultraviolet (EUV) multilayer mirror for 6.x nm radiation that provides selective suppression for infrared (IR) radiation. The mirror consists of an IR-transparent LaN∕B multilayer stack which is used as EUV-reflective coating and antireflective (AR) coating to suppress IR. The AR coating can be optimized to suppress CO{sub 2} laser radiation at the wavelength of 10.6 μm, which is of interest for application in next-generation EUV lithography systems.

  7. Properites of ultrathin films appropriate for optics capping layers in extreme ultraviolet lithography (EUVL)

    SciTech Connect (OSTI)

    Bajt, S; Edwards, N V; Madey, T E

    2007-06-25

    The contamination of optical surfaces by irradiation shortens optics lifetime and is one of the main concerns for optics used in conjunction with intense light sources, such as high power lasers, 3rd and 4th generation synchrotron sources or plasma sources used in extreme ultraviolet lithography (EUVL) tools. This paper focuses on properties and surface chemistry of different materials, which as thin layers, could be used as capping layers to protect and extend EUVL optics lifetime. The most promising candidates include single element materials such as ruthenium and rhodium, and oxides such as TiO{sub 2} and ZrO{sub 2}.

  8. Diffraction spectral filter for use in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C.; Tichenor, Daniel A.; Bernardez, Luis J.

    2002-01-01

    A condenser system for generating a beam of radiation includes a source of radiation light that generates a continuous spectrum of radiation light; a condenser comprising one or more first optical elements for collecting radiation from the source of radiation light and for generating a beam of radiation; and a diffractive spectral filter for separating first radiation light having a particular wavelength from the continuous spectrum of radiation light. Cooling devices can be employed to remove heat generated. The condenser system can be used with a ringfield camera in projection lithography.

  9. Wafer chamber having a gas curtain for extreme-UV lithography

    DOE Patents [OSTI]

    Kanouff, Michael P.; Ray-Chaudhuri, Avijit K.

    2001-01-01

    An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

  10. Could Material Defects Actually Improve Solar Cells?

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Deep-level defects frequently hamper the efficiency of solar cells, but NREL theoretical research suggests that defects with properly engineered energy levels can improve carrier ...

  11. Sequential detection of web defects

    DOE Patents [OSTI]

    Eichel, Paul H.; Sleefe, Gerard E.; Stalker, K. Terry; Yee, Amy A.

    2001-01-01

    A system for detecting defects on a moving web having a sequential series of identical frames uses an imaging device to form a real-time camera image of a frame and a comparitor to comparing elements of the camera image with corresponding elements of an image of an exemplar frame. The comparitor provides an acceptable indication if the pair of elements are determined to be statistically identical; and a defective indication if the pair of elements are determined to be statistically not identical. If the pair of elements is neither acceptable nor defective, the comparitor recursively compares the element of said exemplar frame with corresponding elements of other frames on said web until one of the acceptable or defective indications occur.

  12. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials

  13. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials

  14. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials

  15. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials

  16. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials

  17. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Shedding Light on Nanocrystal Defects Print Thursday, 20 June 2013 10:41 Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from

  18. Topological defects from the multiverse

    SciTech Connect (OSTI)

    Zhang, Jun; Blanco-Pillado, Jose J.; Garriga, Jaume; Vilenkin, Alexander

    2015-05-28

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

  19. Development characteristics of polymethyl methacrylate in alcohol/water mixtures. A lithography and Raman spectroscopy study

    SciTech Connect (OSTI)

    Ocola, Leonidas E.; Costales, Maya; Gosztola, David J.

    2015-12-10

    Poly methyl methacrylate (PMMA) is the most widely used resist in electron beam lithography. This paper reports on a lithography and Raman spectroscopy study of development characteristics of PMMA in methanol, ethanol and isopropanol mixtures with water as developers. We have found that ethanol/water mixtures at a 4:1 volume ratio are an excellent, high resolution, non-toxic, developer for exposed PMMA. We also have found that the proper methodology to use so that contrast data can be compared to techniques used in polymer science is not to rinse the developed resist but to immediately dry with nitrogen. Our results show how powerful simple lithographic techniques can be used to study ternary polymer solvent solutions when compared to other techniques used in the literature. Raman data shows that there both tightly bonded –OH groups and non-hydrogen bonded –OH groups play a role in the development of PMMA. Tightly hydrogen bonded –OH groups show pure Lorentzian Raman absorption only in the concentration ranges where ethanol/water and IPA/water mixtures are effective developers of PMMA. The impact of the understanding these interactions may open doors to a new developers of other electron beam resists that can reduce the toxicity of the waste stream.

  20. Objective for EUV microscopy, EUV lithography, and x-ray imaging

    DOE Patents [OSTI]

    Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

    2016-05-03

    Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

  1. Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy

    SciTech Connect (OSTI)

    Iberi, Vighter O.; Vlassiouk, Ivan V.; Zhang, X. -G.; Matola, Brad R.; Linn, Allison R.; Joy, David Charles; Adam Justin Rondinone

    2015-07-07

    The remarkable mechanical and electronic properties of graphene make it an ideal candidate for next generation nanoelectronics. With the recent development of commercial-level single-crystal graphene layers, the potential for manufacturing household graphene-based devices has improved, but significant challenges still remain with regards to patterning the graphene into devices. In the case of graphene supported on a substrate, traditional nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene nanoribbons but the multi-step processes they require can result in contamination of the graphene with resists and solvents. In this letter, we report the utility of scanning helium ion lithography for fabricating functional graphene nanoconductors that are supported directly on a silicon dioxide layer, and we measure the minimum feature size achievable due to limitations imposed by thermal fluctuations and ion scattering during the milling process. Further we demonstrate that ion beams, due to their positive charging nature, may be used to observe and test the conductivity of graphene-based nanoelectronic devices in situ.

  2. Soft holographic interference lithography microlens for enhanced organic light emitting diode light extraction

    SciTech Connect (OSTI)

    Park, Joong-Mok; Gan, Zhengqing; Leung, Wai Y.; Liu, Rui; Ye, Zhuo; Constant, Kristen; Shinar, Joseph; Shinar, Ruth; Ho, Kai-Ming

    2011-06-06

    Very uniform 2 {micro}m-pitch square microlens arrays ({micro}LAs), embossed on the blank glass side of an indium-tin-oxide (ITO)-coated 1.1 mm-thick glass, are used to enhance light extraction from organic light-emitting diodes (OLEDs) by {approx}100%, significantly higher than enhancements reported previously. The array design and size relative to the OLED pixel size appear to be responsible for this enhancement. The arrays are fabricated by very economical soft lithography imprinting of a polydimethylsiloxane (PDMS) mold (itself obtained from a Ni master stamp that is generated from holographic interference lithography of a photoresist) on a UV-curable polyurethane drop placed on the glass. Green and blue OLEDs are then fabricated on the ITO to complete the device. When the {mu}LA is {approx}15 x 15 mm{sup 2}, i.e., much larger than the {approx}3 x 3 mm{sup 2} OLED pixel, the electroluminescence (EL) in the forward direction is enhanced by {approx}100%. Similarly, a 19 x 25 mm{sup 2} {mu}LA enhances the EL extracted from a 3 x 3 array of 2 x 2 mm{sup 2} OLED pixels by 96%. Simulations that include the effects of absorption in the organic and ITO layers are in accordance with the experimental results and indicate that a thinner 0.7 mm thick glass would yield a {approx}140% enhancement.

  3. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    SciTech Connect (OSTI)

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven Reitzenstein, Stephan; Strittmatter, André

    2015-07-15

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  4. Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Iberi, Vighter O.; Vlassiouk, Ivan V.; Zhang, X. -G.; Matola, Brad R.; Linn, Allison R.; Joy, David Charles; Adam Justin Rondinone

    2015-07-07

    The remarkable mechanical and electronic properties of graphene make it an ideal candidate for next generation nanoelectronics. With the recent development of commercial-level single-crystal graphene layers, the potential for manufacturing household graphene-based devices has improved, but significant challenges still remain with regards to patterning the graphene into devices. In the case of graphene supported on a substrate, traditional nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene nanoribbons but the multi-step processes they require can result in contamination of the graphene with resists and solvents. In this letter, we report the utility of scanning helium ionmore » lithography for fabricating functional graphene nanoconductors that are supported directly on a silicon dioxide layer, and we measure the minimum feature size achievable due to limitations imposed by thermal fluctuations and ion scattering during the milling process. Further we demonstrate that ion beams, due to their positive charging nature, may be used to observe and test the conductivity of graphene-based nanoelectronic devices in situ.« less

  5. Submicron surface patterning by laser ablation with short UV pulses using a proximity phase mask setup

    SciTech Connect (OSTI)

    Borchers, B.; Bekesi, J.; Simon, P.; Ihlemann, J.

    2010-03-15

    A new approach for the generation of large-area periodic surface structures on different materials, like polymers and semiconductors, by direct laser ablation is presented. The surfaces were illuminated with the interference pattern emerging in close proximity behind a laser irradiated phase mask. In the experiments, nanosecond and picosecond laser pulses at 248 nm were applied. To prevent contamination or damage of the phase mask caused by the ablated material, the mask is protected by a thin water film or a thin quartz plate. In addition we present a technique to eliminate a lateral variation of the generated structures due to insufficient alignment precision of the workpiece.

  6. Mask effects on cosmological studies with weak-lensing peak statistics

    SciTech Connect (OSTI)

    Liu, Xiangkun; Pan, Chuzhong; Fan, Zuhui; Wang, Qiao

    2014-03-20

    With numerical simulations, we analyze in detail how the bad data removal, i.e., the mask effect, can influence the peak statistics of the weak-lensing convergence field reconstructed from the shear measurement of background galaxies. It is found that high peak fractions are systematically enhanced because of the presence of masks; the larger the masked area is, the higher the enhancement is. In the case where the total masked area is about 13% of the survey area, the fraction of peaks with signal-to-noise ratio ? ? 3 is ?11% of the total number of peaks, compared with ?7% of the mask-free case in our considered cosmological model. This can have significant effects on cosmological studies with weak-lensing convergence peak statistics, inducing a large bias in the parameter constraints if the effects are not taken into account properly. Even for a survey area of 9 deg{sup 2}, the bias in (? {sub m}, ?{sub 8}) is already intolerably large and close to 3?. It is noted that most of the affected peaks are close to the masked regions. Therefore, excluding peaks in those regions in the peak statistics can reduce the bias effect but at the expense of losing usable survey areas. Further investigations find that the enhancement of the number of high peaks around the masked regions can be largely attributed to the smaller number of galaxies usable in the weak-lensing convergence reconstruction, leading to higher noise than that of the areas away from the masks. We thus develop a model in which we exclude only those very large masks with radius larger than 3' but keep all the other masked regions in peak counting statistics. For the remaining part, we treat the areas close to and away from the masked regions separately with different noise levels. It is shown that this two-noise-level model can account for the mask effect on peak statistics very well, and the bias in cosmological parameters is significantly reduced if this model is applied in the parameter fitting.

  7. Defect distributions in weld-deposited cladding

    SciTech Connect (OSTI)

    Li, Y.Y.; Mabe, W.R.

    1998-11-01

    Defect distributions in stainless steel and nickel-chromium alloy weld-deposited cladding over a low alloy steel base were characterized by destructive evaluation (DE). An evaluation of the observed defects was conducted to characterize the defects by type or classification. Size distributions of cladding defect types were developed from the information obtained. This paper presents the results of the cladding evaluation.

  8. Annotated bibliography for gas-mask and chemical-defense-gear related papers. Interim report

    SciTech Connect (OSTI)

    Kelly, T.L.; Sucec, A.A.; Englund, C.E.

    1988-01-15

    This is an annotated bibliography of papers that relate to the characteristics and effects of gas masks and other chemical-defense gear. Psychological, physiological, and cognitive performance effects are included.

  9. Estimated Costing of an EUV Mask Inspection Microscope

    SciTech Connect (OSTI)

    Barty, A; Taylor, J S

    2002-08-20

    This document is the fourth sub-report of the EUV AIM design study being conducted at LLNL on behalf of International SEMATECH (ISMT) and addresses the issue of preliminary system costing. The purpose of the LLNL study, as identified in section 1.2 of the statement of work, is to research the basic user requirements of an actinic defect characterization tool, potential design configurations and top-level specifications. The objectives of this design study specifically identified in section 1.3 of the statement of work were to: (1) Determine the user requirements of an actinic defect characterization tool; (2) Determine if an EUV AIM tool is an appropriate platform for actinic defect characterization; (3) Determine possible design configurations and top-level performance specifications; (4) Identify potential technical issues and risks of different technical approaches; (5) Provide estimates of cost relating to different technical approaches; and (6) Provide simulated performance for key subsystems and the entire system. The sub-sections of the study to be addressed were accordingly defined in the statement of work as being: (1) Formulation of top-level specifications; (2) Identification of system configurations suitable for meeting the top-level specifications; (3) Preliminary design of imaging systems; (4) Preliminary design of illumination systems; (5) Prediction and comparison of performance through aerial image calculation; (6) Identification of sub-system requirements; (7) Identification of potential vendors; (8) Estimation of system cost; (9) Identification of technical issues; and (10) Definition of technology transfer or development required. Points 1 to 7 and 9 to 10 are addressed in separate reports to ISMT. This report addresses item 8, system costing, and is provided as a separate report so that its content can be kept confidential at the discretion of ISMT. In this analysis we cost two systems--one based on normal-incidence multilayer-coated optics and

  10. Study of nano imprinting using soft lithography on Krafty glue and PVDF polymer thin films

    SciTech Connect (OSTI)

    Sankar, M. S. Ravi, E-mail: rameshg.phy@pondiuni.edu; Gangineni, Ramesh Babu, E-mail: rameshg.phy@pondiuni.edu [Department of Physics, Pondicherry University, R. V. Nagar, Kalapet, Puducherry - 605014 (India)

    2014-04-24

    The present work reveals soft lithography strategy based on self assembly and replica molding for carrying out micro and nanofabrication. It provides a convenient, effective and very low cost method for the formation and manufacturing of micro and nano structures. Al-layer of compact disc (sony CD-R) used as a stamp with patterned relief structures to generate patterns and structures with pattern size of 100nm height, 1.7 ?m wide. In literature, PDMS (Polydimethylsiloxane) solution is widely used to get negative copy of the Al-layer. In this work, we have used inexpensive white glue (Polyvinylacetate + water), 15gm (?5) and PVDF (Polyvinylidene difluoride) spin coated films and successfully transferred the nano patterns of Al layer on to white glue and PVDF films.

  11. Window-assisted nanosphere lithography for vacuum micro-nano-electronics

    SciTech Connect (OSTI)

    Li, Nannan; Pang, Shucai; Yan, Fei; Chen, Lei; Jin, Dazhi; Xiang, Wei; Zhang, De; Zeng, Baoqing

    2015-04-15

    Development of vacuum micro-nano-electronics is quite important for combining the advantages of vacuum tubes and solid-state devices but limited by the prevailing fabricating techniques which are expensive, time consuming and low-throughput. In this work, window-assisted nanosphere lithography (NSL) technique was proposed and enabled the low-cost and high-efficiency fabrication of nanostructures for vacuum micro-nano-electronic devices, thus allowing potential applications in many areas. As a demonstration, we fabricated high-density field emitter arrays which can be used as cold cathodes in vacuum micro-nano-electronic devices by using the window-assisted NSL technique. The details of the fabricating process have been investigated. This work provided a new and feasible idea for fabricating nanostructure arrays for vacuum micro-nano-electronic devices, which would spawn the development of vacuum micro-nano-electronics.

  12. Virtually distortion-free imaging system for large field, high resolution lithography using electrons, ions or other particle beams

    DOE Patents [OSTI]

    Hawryluk, A.M.; Ceglio, N.M.

    1993-01-12

    Virtually distortion free large field high resolution imaging is performed using an imaging system which contains large field distortion or field curvature. A reticle is imaged in one direction through the optical system to form an encoded mask. The encoded mask is then imaged back through the imaging system onto a wafer positioned at the reticle position. Particle beams, including electrons, ions and neutral particles, may be used as well as electromagnetic radiation.

  13. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Contolini, Robert J.

    2001-01-01

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  14. Phase-shifting point diffraction interferometer focus-aid enhanced mask

    DOE Patents [OSTI]

    Naulleau, Patrick

    2000-01-01

    A phase-shifting point diffraction interferometer system (PS/PDI) employing a PS/PDI mask that includes a PDI focus aid is provided. The PDI focus aid mask includes a large or secondary reference pinhole that is slightly displaced from the true or primary reference pinhole. The secondary pinhole provides a larger capture tolerance for interferometrically performing fine focus. With the focus-aid enhanced mask, conventional methods such as the knife-edge test can be used to perform an initial (or rough) focus and the secondary (large) pinhole is used to perform interferometric fine focus. Once the system is well focused, high accuracy interferometry can be performed using the primary (small) pinhole.

  15. Cavity-enhanced single photon emission from site-controlled In(Ga)As quantum dots fabricated using nanoimprint lithography

    SciTech Connect (OSTI)

    Tommila, J.; Hakkarainen, T. V.; Schramm, A. Guina, M.; Belykh, V. V.; Sibeldin, N. N.; Heinonen, E.

    2014-05-26

    We report on the emission dynamics of single In(Ga)As quantum dots formed in etched GaAs pits and integrated into micropillar cavities. The site-controlled quantum dots were fabricated by molecular beam epitaxy on nanoimprint lithography patterned GaAs(001) surfaces. Triggered single photon emission confirmed by photon autocorrelation measurements is demonstrated. Time-resolved photoluminescence experiments clearly show an effect of the cavity on the spontaneous emission rate of the quantum dot.

  16. A simplified method for generating periodic nanostructures by interference lithography without the use of an anti-reflection coating

    SciTech Connect (OSTI)

    Kapon, Omree; Muallem, Merav; Palatnik, Alex; Aviv, Hagit; Tischler, Yaakov R.

    2015-11-16

    Interference lithography has proven to be a useful technique for generating periodic sub-diffraction limited nanostructures. Interference lithography can be implemented by exposing a photoresist polymer to laser light using a two-beam arrangement or more simply a one beam configuration based on a Lloyd's Mirror Interferometer. For typical photoresist layers, an anti-reflection coating must be deposited on the substrate to prevent adverse reflections from cancelling the holographic pattern of the interfering beams. For silicon substrates, such coatings are typically multilayered and complex in composition. By thinning the photoresist layer to a thickness well below the quarter wavelength of the exposing beam, we demonstrate that interference gratings can be generated without an anti-reflection coating on the substrate. We used ammonium dichromate doped polyvinyl alcohol as the positive photoresist because it provides excellent pinhole free layers down to thicknesses of 40 nm, and can be cross-linked by a low-cost single mode 457 nm laser, and can be etched in water. Gratings with a period of 320 nm and depth of 4 nm were realized, as well as a variety of morphologies depending on the photoresist thickness. This simplified interference lithography technique promises to be useful for generating periodic nanostructures with high fidelity and minimal substrate treatments.

  17. Effects of Stone-Wales and vacancy defects in atomic-scale friction on defective graphite

    SciTech Connect (OSTI)

    Sun, Xiao-Yu; Wu, RunNi; Xia, Re; Chu, Xi-Hua; Xu, Yuan-Jie

    2014-05-05

    Graphite is an excellent solid lubricant for surface coating, but its performance is significantly weakened by the vacancy or Stone-Wales (SW) defect. This study uses molecular dynamics simulations to explore the frictional behavior of a diamond tip sliding over a graphite which contains a single defect or stacked defects. Our results suggest that the friction on defective graphite shows a strong dependence on defect location and type. The 5-7-7-5 structure of SW defect results in an effectively negative slope of friction. For defective graphite containing a defect in the surface, adding a single vacancy in the interior layer will decrease the friction coefficients, while setting a SW defect in the interior layer may increase the friction coefficients. Our obtained results may provide useful information for understanding the atomic-scale friction properties of defective graphite.

  18. Selecting the best defect reduction methodology

    SciTech Connect (OSTI)

    Hinckley, C.M.; Barkan, P.

    1994-04-01

    Defect rates less than 10 parts per million, unimaginable a few years ago, have become the standard of world-class quality. To reduce defects, companies are aggressively implementing various quality methodologies, such as Statistical Quality Control Motorola`s Six Sigma, or Shingo`s poka-yok. Although each quality methodology reduces defects, selection has been based on an intuitive sense without understanding their relative effectiveness in each application. A missing link in developing superior defect reduction strategies has been a lack of a general defect model that clarifies the unique focus of each method. Toward the goal of efficient defect reduction, we have developed an event tree which addresses a broad spectrum of quality factors and two defect sources, namely, error and variation. The Quality Control Tree (QCT) predictions are more consistent with production experience than obtained by the other methodologies considered independently. The QCT demonstrates that world-class defect rates cannot be achieved through focusing on a single defect source or quality control factor, a common weakness of many methodologies. We have shown that the most efficient defect reduction strategy depend on the relative strengths and weaknesses of each organization. The QCT can help each organization identify the most promising defect reduction opportunities for achieving its goals.

  19. A Molecular- and Nano-Electronics Test (MONET) platform fabricated using extreme ultraviolet lithography.

    SciTech Connect (OSTI)

    Dentinger, Paul M.; Cardinale, Gregory F.; Hunter, Luke L.; Talin, Albert Alec

    2003-12-01

    We describe the fabrication and characterization of an electrode array test structure, designed for electrical probing of molecules and nanocrystals. We use Extreme Ultraviolet Lithography (EUVL) to define the electrical test platform features. As fabricated, the platform includes nominal electrode gaps of 0 nm, 40 nm, 60 nm, and 80 nm. Additional variation in electrode gap is achieved by controlling the exposure conditions, such as dose and focus. To enable EUVL based nanofabrication, we develop a novel bi-level photoresist process. The bi-level photoresist consists of a combination of a commercially available polydimethylglutarimide (PMGI) bottom layer and an experimental EUVL photoresist top (imaging) layer. We measure the sensitivity of PMGI to EUV exposure dose as a function of photoresist pre-bake temperature, and using this data, optimize a metal lift-off process. Reliable fabrication of 700 Angstrom thick Au structures with sub-1000 Angstrom critical dimensions is achieved, even without the use of a Au adhesion layer, such as Ti. Several test platforms are used to characterize electrical properties of organic molecules deposited as self assembled monolayers.

  20. On nuclear reactions in defects

    SciTech Connect (OSTI)

    Sienes, J.K. )

    1991-05-01

    The variability of results concerning cold fusion, together with the difficulty of explaining the observations, suggests that some nonstandard processes may be occurring. One such possibility is that nuclear reactions occur in defects of a deuterated lattice as a result of transient motions that momentarily bring deuterium atoms into close proximity. In this paper a mechanism involving shear of a one-dimensional lattice is described that illustrates this possibility. Order-of-magnitude estimates indicate that the expected fusion rate is not inconsistent with some experiments.

  1. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, Earl A.; Lipshutz, Robert J.; Morris, Macdonald S.; Winkler, James L.

    1997-01-01

    An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks.

  2. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell; Shafer, David R.

    2001-01-01

    An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first convex mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receive a chief ray at an incidence angle of less than substantially 9.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 14.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than substantially 16 .mu.m.

  3. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell

    2000-01-01

    An all-refelctive optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six refelecting surfaces has an aspheric departure of less than 16.0 .mu.m.

  4. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell

    2001-01-01

    An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than 16.0 .mu.m.

  5. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell; Shafer, David

    2001-01-01

    An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first convex mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 9.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 14.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than substantially 16 .mu.m.

  6. Assessing out-of-band flare effects at the wafer level for EUV lithography

    SciTech Connect (OSTI)

    George, Simi; Naulleau, Patrick; Kemp, Charles; Denham, Paul; Rekawa, Senajith

    2010-01-25

    To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the results obtained are in agreement.

  7. Theoretical and numerical analyses of a slit-masked chicane for modulated bunch generation

    SciTech Connect (OSTI)

    Zhu, Xiaofang; Broemmelsiek, Daniel R.; Shin, Young -Min

    2015-10-28

    Density modulations on electron beams can improve machine performance of beam-driven accelerators and FELs with resonance beam-wave coupling. The beam modulation is studied with a masked chicane by the analytic model and simulations with the beam parameters of the Fermilab Accelerator Science and Technology (FAST) facility. With the chicane design parameters (bending angle of 18o, bending radius of 0.95 m and R56 ~ –0.19 m) and a nominal beam of 3 ps bunch length, the analytic model showed that a slit-mask with slit period 900 μ m and aperture width 300 μ m induces a modulation of bunch-to-bunch spacing ~ 100 μ m to the bunch with 2.4% correlated energy spread. With the designed slit mask and a 3 ps bunch, particle-in-cell (PIC) simulations, including nonlinear energy distributions, space charge force, and coherent synchrotron radiation (CSR) effect, also result in beam modulation with bunch-to-bunch distance around 100 μ m and a corresponding modulation frequency of 3 THz. The beam modulation has been extensively examined with three different beam conditions, 2.25 ps (0.25 nC), 3.25 ps (1 nC), and 4.75 ps (3.2 nC), by tracking code Elegant. The simulation analysis indicates that the sliced beam by the slit-mask with 3 ~ 6% correlated energy spread has modulation lengths about 187 μ m (0.25 nC), 270 μ m (1 nC) and 325 μ m (3.2 nC). As a result, the theoretical and numerical data proved the capability of the designed masked chicane in producing modulated bunch train with micro-bunch length around 100 fs.

  8. Theoretical and numerical analyses of a slit-masked chicane for modulated bunch generation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Xiaofang; Broemmelsiek, Daniel R.; Shin, Young -Min; Fermi National Accelerator Lab.

    2015-10-28

    Density modulations on electron beams can improve machine performance of beam-driven accelerators and FELs with resonance beam-wave coupling. The beam modulation is studied with a masked chicane by the analytic model and simulations with the beam parameters of the Fermilab Accelerator Science and Technology (FAST) facility. With the chicane design parameters (bending angle of 18o, bending radius of 0.95 m and R56 ~ –0.19 m) and a nominal beam of 3 ps bunch length, the analytic model showed that a slit-mask with slit period 900 μ m and aperture width 300 μ m induces a modulation of bunch-to-bunch spacing ~more » 100 μ m to the bunch with 2.4% correlated energy spread. With the designed slit mask and a 3 ps bunch, particle-in-cell (PIC) simulations, including nonlinear energy distributions, space charge force, and coherent synchrotron radiation (CSR) effect, also result in beam modulation with bunch-to-bunch distance around 100 μ m and a corresponding modulation frequency of 3 THz. The beam modulation has been extensively examined with three different beam conditions, 2.25 ps (0.25 nC), 3.25 ps (1 nC), and 4.75 ps (3.2 nC), by tracking code Elegant. The simulation analysis indicates that the sliced beam by the slit-mask with 3 ~ 6% correlated energy spread has modulation lengths about 187 μ m (0.25 nC), 270 μ m (1 nC) and 325 μ m (3.2 nC). As a result, the theoretical and numerical data proved the capability of the designed masked chicane in producing modulated bunch train with micro-bunch length around 100 fs.« less

  9. Could Material Defects Actually Improve Solar Cells?

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Could Material Defects Actually Improve Solar Cells? Could Material Defects Actually Improve Solar Cells? March 21, 2016 Contact: Kathy Kincade, kkincade@lbl.gov, +1 510 495 2124 NRELsolarcell Scientists at the U.S. Department of Energy's (DOE) National Renewable Energy Laboratory (NREL) are using supercomputers to study what may seem paradoxical: certain defects in silicon solar cells may actually improve their performance. The findings, published January 11, 2016 in Applied Physics Letters,

  10. Research Challenge 4: Defect-Carrier Interactions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4: Defect-Carrier Interactions - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary ...

  11. System and methods for determining masking signals for applying empirical mode decomposition (EMD) and for demodulating intrinsic mode functions obtained from application of EMD

    DOE Patents [OSTI]

    Senroy, Nilanjan; Suryanarayanan, Siddharth

    2011-03-15

    A computer-implemented method of signal processing is provided. The method includes generating one or more masking signals based upon a computed Fourier transform of a received signal. The method further includes determining one or more intrinsic mode functions (IMFs) of the received signal by performing a masking-signal-based empirical mode decomposition (EMD) using the at least one masking signal.

  12. Amplified spontaneous emission in active channel waveguides produced by electron-beam lithography in LiF crystals

    SciTech Connect (OSTI)

    Montereali, R. M.; Piccinini, M.; Burattini, E.

    2001-06-25

    In this letter we report the observation of amplified spontaneous emission of the red light from LiF:F{sub 2} centers in active channel waveguides realized by electron-beam lithography in lithium fluoride crystals. Low pumping power densities have been used in quasi-continuous-wave regime at room temperature; the appreciable values of the gain coefficients, 4.67 cm{minus}1 with an exciting power density of 0.31 W/cm2 at 458 nm, make this material a good candidate for the realization of active integrated optical devices. {copyright} 2001 American Institute of Physics.

  13. Method for locating defective nuclear fuel elements

    SciTech Connect (OSTI)

    Lawrie, W.E.; White, N.W.; Womack, R.E.

    1982-02-02

    Defects in nuclear fuel elements are ascertained and located within an assembled fuel assembly by ultrasonic means. In a typical embodiment of the invention, an ultrasonic search unit is positioned within the fuel assembly opposite the lower plenum of the fuel element to be tested. An ultrasonic pulse is radially projected into the element. Defective fuel elements are ascertained by ultrasonic reflection measurements.

  14. Woodgrain defect on tinned steel Flandres foil

    SciTech Connect (OSTI)

    Sarkis, A.M.; Robin, A. Souza, V.A.; Suzuki, P.A.

    2011-06-15

    Tin electrocoated steel strip, also referred to as Flandres foil, is largely used for manufacturing food containers. Tinplates must have good corrosion resistance, workability, weldability, as well as a bright appearance. The woodgrain defect, a not yet fully understood defect that occurs on tinplates and accounts for their high scrap rate, consists of alternate bands of bright/dull reflectivity and resembles longitudinally cut wood. Observations of the woodgrain defect by scanning electron microscopy showed that the molten tin spreads irregularly during both the melting and solidification stages. X-ray diffraction analyses showed that the metallic tin tended to crystallize in the (200) direction for coupons with and without the woodgrain defect. Nevertheless, the preferential orientation degree decreased for coupons with the woodgrain defect. The rocking curves, also known as omega-scan, showed that the tin grains were uniformly aligned parallel to the strip surface for coupons with no defects, whereas for tinplates with woodgrain, the tin grains were not uniformly oriented, probably due to the misalignment of the grains in relation to the surface. - Graphical abstract: The woodgrain defect occurs on Flandres tinplates and consists in the formation of alternate bands of different reflectivity (bright/dull), which looks like longitudinally cut wood. X-ray diffractometry showed that the typical bright surface of tinplate is associated to the uniform distribution of aligned (200) Sn grains, whereas in tinplate with the woodgrain defect, the Sn grains were not uniformly oriented, due to the misalignment of the (200) Sn planes relative to the surface. Research highlights: {yields} The bright surface of tinplate is associated to the uniform distribution of aligned (200) Sn grains. {yields} The woodgrain defect on tinplate consists in alternate bands of bright/dull appearance. {yields} In tinplate with the woodgrain defect, the Sn grains were not uniformly oriented, due

  15. Patterned Exfoliation of GaAs Based on Masked Helium Implantation and Subsequent Rapid Thermal Annealing

    SciTech Connect (OSTI)

    Woo, H. J.; Choi, H. W.; Kim, G. D.; Hong, W.; Kim, J. K.

    2009-03-10

    A method of patterning single crystal GaAs based on ion implantation induced selective area exfoliation is suggested. Samples were implanted with 200-500 keV helium ions to a fluence range of 2-4x10{sup 16} He{sup +}/cm{sup 2} at room temperature through masks of Ni mesh (40 {mu}m opening) or stainless steel wire (50 {mu}m in diameter), and subsequent rapid thermal annealing at 350-500{open_square} resulted in expulsion of ion beam exposed material. The influences of ion energy, ion fluence, implantation temperature, subsequent annealing conditions (temperature and ramp rate), and mask pattern and its orientation with GaAs lattice on the patterned exfoliation were examined.

  16. The role of point defects and defect complexes in silicon device processing. Summary report and papers

    SciTech Connect (OSTI)

    Sopori, B.; Tan, T.Y.

    1994-08-01

    This report is the summary of the third workshop on the role of point defects and defect complexes in silicon device processing. The workshop was organized: (1) to discuss recent progress in the material quality produced by photovoltaic Si manufacturers, (2) to foster the understanding of point defect issues in Si device processing, (3) to review the effects of inhomogeneities on large- area solar cell performance, (4) to discuss how to improve Si solar cell processing, and (5) to develop a new understanding of gettering, defect passivation, and defect annihilation. Separate abstract were prepared for the individual papers, for the database.

  17. DOE/SC-ARM/TR-098 Micropulse Lidar Cloud Mask Value-Added Product Technical Report

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8 Micropulse Lidar Cloud Mask Value-Added Product Technical Report C Sivaraman J Comstock July 2011 DISCLAIMER This report was prepared as an account of work sponsored by the U.S. Government. Neither the United States nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would

  18. Planck CMB anomalies: astrophysical and cosmological secondary effects and the curse of masking

    SciTech Connect (OSTI)

    Rassat, A.; Starck, J.-L.; Paykari, P.; Sureau, F.; Bobin, J. E-mail: jstarck@cea.fr E-mail: florent.sureau@cea.fr

    2014-08-01

    Large-scale anomalies have been reported in CMB data with both WMAP and Planck data. These could be due to foreground residuals and or systematic effects, though their confirmation with Planck data suggests they are not due to a problem in the WMAP or Planck pipelines. If these anomalies are in fact primordial, then understanding their origin is fundamental to either validate the standard model of cosmology or to explore new physics. We investigate three other possible issues: 1) the trade-off between minimising systematics due to foreground contamination (with a conservative mask) and minimising systematics due to masking, 2) astrophysical secondary effects (the kinetic Doppler quadrupole and kinetic Sunyaev-Zel'dovich effect), and 3) secondary cosmological signals (the integrated Sachs-Wolfe effect). We address the masking issue by considering new procedures that use both WMAP and Planck to produce higher quality full-sky maps using the sparsity methodology (LGMCA maps). We show the impact of masking is dominant over that of residual foregrounds, and the LGMCA full-sky maps can be used without further processing to study anomalies. We consider four official Planck PR1 and two LGMCA CMB maps. Analysis of the observed CMB maps shows that only the low quadrupole and quadrupole-octopole alignment seem significant, but that the planar octopole, Axis of Evil, mirror parity and cold spot are not significant in nearly all maps considered. After subtraction of astrophysical and cosmological secondary effects, only the low quadrupole may still be considered anomalous, meaning the significance of only one anomaly is affected by secondary effect subtraction out of six anomalies considered. In the spirit of reproducible research all reconstructed maps and codes will be made available for download here http://www.cosmostat.org/anomaliesCMB.html.

  19. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, Earl A.; Morris, MacDonald S.; Winkler, James L.

    1996-01-01

    An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system (100) is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files (104) to design and/or generate lithographic masks (110).

  20. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, E.A.; Morris, M.S.; Winkler, J.L.

    1996-11-05

    An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

  1. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, E.A.; Lipshutz, R.J.; Morris, M.S.; Winkler, J.L.

    1997-01-14

    An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

  2. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, Earl A.; Morris, MacDonald S.; Winkler, James L.

    1999-01-05

    An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system (100) is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files (104) to design and/or generate lithographic masks (110).

  3. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, E.A.; Morris, M.S.; Winkler, J.L.

    1999-01-05

    An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

  4. Can we stop the spread of influenza in schools with face masks?

    SciTech Connect (OSTI)

    Del Valle, Sara Y; Tellier, Raymond; Settles, Gary; Tang, Julian

    2009-01-01

    In the absence of a strain-specific vaccine and the potential resistance to antiviral medication, nonpharmaceutical interventions can be used to reduce the spread of an infectious disease such as influenza. The most common non-pharmaceutical interventions include school closures, travel restrictions, social distancing, enforced or volunteer home isolation and quarantine, improved hand hygiene, and the appropriate wearing of face masks. However, for some of these interventions, there are some unavoidable economic costs to both employees and employers, as well as possible additional detriment to society as a whole. For example, it has been shown that school-age children are most likely to be infected and act as sources of infection for others, due to their greater societal interaction and increased susceptibility. Therefore, preventing or at least reducing infections in children is a logical first-line of defense. For this reason, school closures have been widely investigated and recommended as part of pandemic influenza preparedness, and some studies support this conclusion. Yet, school closures would result in lost work days if at least one parent must be absent from work to care for children who would otherwise be at school. In addition, the delay in-academic progress may be detrimental due to mass school absenteeism. In particular, the pandemic influenza guidance by the U.S. Department of Health and Human Services recommends school closures for less than four weeks for Category 2 and 3 pandemics (i.e., similar to the milder 1957 and 1968 pandemics) and one to three months for Category 4 and 5 pandemics (i .e., similar to the 1918 pandemic ). Yet, given the above, it is clear that closing schools for up to three months is unlikely to be a practical mitigation strategy for many families and society. Thus modelers and policy makers need to weigh all factors before recommending such drastic measures, particularly if the agent under consideration typically has low

  5. PROJECT PROFILE: Defining the Defect Chemistry and Structural...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Defining the Defect Chemistry and Structural Properties Required for 24%-Efficient CdTe Devices PROJECT PROFILE: Defining the Defect Chemistry and Structural Properties Required for ...

  6. Design of defect spins in piezoelectric aluminum nitride for...

    Office of Scientific and Technical Information (OSTI)

    Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum ... To date, defect qubits have only been realized in materials with strong covalent bonds. ...

  7. Defect Analysis of Vehicle Compressed Natural Gas Composite Cylinder...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Defect Analysis of Vehicle Compressed Natural Gas Composite Cylinder Defect Analysis of Vehicle Compressed Natural Gas Composite Cylinder These slides were presented at the Onboard ...

  8. Theory of Defect-Induced Non-Radiative Recombination. (Conference...

    Office of Scientific and Technical Information (OSTI)

    Conference: Theory of Defect-Induced Non-Radiative Recombination. Citation Details In-Document Search Title: Theory of Defect-Induced Non-Radiative Recombination. Authors: Modine, ...

  9. Partial Defect Testing of Pressurized Water Reactor Spent Fuel...

    Office of Scientific and Technical Information (OSTI)

    Partial Defect Testing of Pressurized Water Reactor Spent Fuel Assemblies Citation Details In-Document Search Title: Partial Defect Testing of Pressurized Water Reactor Spent Fuel ...

  10. Self-Regulation Mechanism for Charged Point Defects in Hybrid...

    Office of Scientific and Technical Information (OSTI)

    Accepted Manuscript: Self-Regulation Mechanism for Charged Point Defects in Hybrid Halide Perovskites Title: Self-Regulation Mechanism for Charged Point Defects in Hybrid Halide ...

  11. Bowing of the defect formation energy in semiconductor alloys...

    Office of Scientific and Technical Information (OSTI)

    Bowing of the defect formation energy in semiconductor alloys Prev Next Title: Bowing of the defect formation energy in semiconductor alloys Authors: Ma, Jie ; Wei, Su-Huai ...

  12. Di-interstitial defect in silicon revisited

    SciTech Connect (OSTI)

    Londos, C. A.; Antonaras, G.; Chroneos, A.; Department of Materials, Imperial College London, London SW7 2BP

    2013-11-21

    Infrared spectroscopy was used to study the defect spectrum of Cz-Si samples following fast neutron irradiation. We mainly focus on the band at 533 cm{sup ?1}, which disappears from the spectra at ?170 C, exhibiting similar thermal stability with the Si-P6 electron paramagnetic resonance (EPR) spectrum previously correlated with the di-interstitial defect. The suggested structural model of this defect comprises of two self-interstitial atoms located symmetrically around a lattice site Si atom. The band anneals out following a first-order kinetics with an activation energy of 0.88 0.3 eV. This value does not deviate considerably from previously quoted experimental and theoretical values for the di-interstitial defect. The present results indicate that the 533 cm{sup ?1} IR band originates from the same structure as that of the Si-P6 EPR spectrum.

  13. Neutron-induced defects in optical fibers

    SciTech Connect (OSTI)

    Rizzolo, S.; Morana, A.; Boukenter, A.; Ouerdane, Y.; Girard, S.; Cannas, M.; Boscaino, R.; Bauer, S.; Perisse, J.; Mace, J-R.; Nacir, B.

    2014-10-21

    We present a study on 0.8 MeV neutron-induced defects up to fluences of 10{sup 17} n/cm{sup 2} in fluorine doped optical fibers by using electron paramagnetic resonance, optical absorption and confocal micro-luminescence techniques. Our results allow to address the microscopic mechanisms leading to the generation of Silica-related point-defects such as E', H(I), POR and NBOH Centers.

  14. AN IMAGE-PLANE ALGORITHM FOR JWST'S NON-REDUNDANT APERTURE MASK DATA

    SciTech Connect (OSTI)

    Greenbaum, Alexandra Z.; Pueyo, Laurent; Sivaramakrishnan, Anand; Lacour, Sylvestre

    2015-01-10

    The high angular resolution technique of non-redundant masking (NRM) or aperture masking interferometry (AMI) has yielded images of faint protoplanetary companions of nearby stars from the ground. AMI on James Webb Space Telescope (JWST)'s Near Infrared Imager and Slitless Spectrograph (NIRISS) has a lower thermal background than ground-based facilities and does not suffer from atmospheric instability. NIRISS AMI images are likely to have 90%-95% Strehl ratio between 2.77 and 4.8 μm. In this paper we quantify factors that limit the raw point source contrast of JWST NRM. We develop an analytic model of the NRM point spread function which includes different optical path delays (pistons) between mask holes and fit the model parameters with image plane data. It enables a straightforward way to exclude bad pixels, is suited to limited fields of view, and can incorporate effects such as intra-pixel sensitivity variations. We simulate various sources of noise to estimate their effect on the standard deviation of closure phase, σ{sub CP} (a proxy for binary point source contrast). If σ{sub CP} < 10{sup –4} radians—a contrast ratio of 10 mag—young accreting gas giant planets (e.g., in the nearby Taurus star-forming region) could be imaged with JWST NIRISS. We show the feasibility of using NIRISS' NRM with the sub-Nyquist sampled F277W, which would enable some exoplanet chemistry characterization. In the presence of small piston errors, the dominant sources of closure phase error (depending on pixel sampling, and filter bandwidth) are flat field errors and unmodeled variations in intra-pixel sensitivity. The in-flight stability of NIRISS will determine how well these errors can be calibrated by observing a point source. Our results help develop efficient observing strategies for space-based NRM.

  15. Active galactic nucleus and quasar science with aperture masking interferometry on the James Webb Space Telescope

    SciTech Connect (OSTI)

    Ford, K. E. Saavik; McKernan, Barry; Sivaramakrishnan, Anand; Martel, André R.; Koekemoer, Anton; Lafrenière, David; Parmentier, Sébastien

    2014-03-10

    Due to feedback from accretion onto supermassive black holes (SMBHs), active galactic nuclei (AGNs) are believed to play a key role in ΛCDM cosmology and galaxy formation. However, AGNs extreme luminosities and the small angular size of their accretion flows create a challenging imaging problem. We show that the James Webb Space Telescope's Near Infrared Imager and Slitless Spectrograph (JWST-NIRISS) Aperture Masking Interferometry (AMI) mode will enable true imaging (i.e., without any requirement of prior assumptions on source geometry) at ∼65 mas angular resolution at the centers of AGNs. This is advantageous for studying complex extended accretion flows around SMBHs and in other areas of angular-resolution-limited astrophysics. By simulating data sequences incorporating expected sources of noise, we demonstrate that JWST-NIRISS AMI mode can map extended structure at a pixel-to-pixel contrast of ∼10{sup –2} around an L = 7.5 point source, using short exposure times (minutes). Such images will test models of AGN feedback, fueling, and structure (complementary with ALMA observations), and are not currently supported by any ground-based IR interferometer or telescope. Binary point source contrast with NIRISS is ∼10{sup –4} (for observing binary nuclei in merging galaxies), significantly better than current ground-based optical or IR interferometry. JWST-NIRISS's seven-hole non-redundant mask has a throughput of 15%, and utilizes NIRISS's F277W (2.77 μm), F380M (3.8 μm), F430M (4.3 μm), and F480M (4.8 μm) filters. NIRISS's square pixels are 65 mas per side, with a field of view ∼2' × 2'. We also extrapolate our results to AGN science enabled by non-redundant masking on future 2.4 m and 16 m space telescopes working at long-UV to near-IR wavelengths.

  16. Patterned graphene functionalization via mask-free scanning of micro-plasma jet under ambient condition

    SciTech Connect (OSTI)

    Ye, Dong; Yu, Yao Liu, Lin; Wu, Shu-Qun; Lu, Xin-Pei; Wu, Yue

    2014-03-10

    In this work, a mask-free method is introduced for patterned nitrogen doping of graphene using a micro-plasma jet under ambient condition. Raman and X-ray photoelectron spectroscopy spectra indicate that nitrogen atoms are incorporated into the graphene lattice with the two-dimensional spatial distribution precisely controlled in the range of mm down to 10??m. Since the chemistry of the micro-plasma jet can be controlled by the choice of the gas mixture, this direct writing process with micro-plasma jet can be a versatile approach for patterned functionalization of graphene with high spatial resolution. This could have promising applications in graphene-based electronics.

  17. Development of computer program ENMASK for prediction of residual environmental masking-noise spectra, from any three independent environmental parameters

    SciTech Connect (OSTI)

    Chang, Y.-S.; Liebich, R. E.; Chun, K. C.

    2000-03-31

    Residual environmental sound can mask intrusive4 (unwanted) sound. It is a factor that can affect noise impacts and must be considered both in noise-impact studies and in noise-mitigation designs. Models for quantitative prediction of sensation level (audibility) and psychological effects of intrusive noise require an input with 1/3 octave-band spectral resolution of environmental masking noise. However, the majority of published residual environmental masking-noise data are given with either octave-band frequency resolution or only single A-weighted decibel values. A model has been developed that enables estimation of 1/3 octave-band residual environmental masking-noise spectra and relates certain environmental parameters to A-weighted sound level. This model provides a correlation among three environmental conditions: measured residual A-weighted sound-pressure level, proximity to a major roadway, and population density. Cited field-study data were used to compute the most probable 1/3 octave-band sound-pressure spectrum corresponding to any selected one of these three inputs. In turn, such spectra can be used as an input to models for prediction of noise impacts. This paper discusses specific algorithms included in the newly developed computer program ENMASK. In addition, the relative audibility of the environmental masking-noise spectra at different A-weighted sound levels is discussed, which is determined by using the methodology of program ENAUDIBL.

  18. Role of point defects/defect complexes in silicon device processing. Book of abstracts, fourth workshop

    SciTech Connect (OSTI)

    Not Available

    1994-06-01

    The 41 abstracts are arranged into 6 sessions: impurities and defects in commercial substrates: their sources, effects on material yield, and material quality; impurity gettering in silicon: limits and manufacturability of impurity gettering and in silicon solar cells; impurity/defect passivation; new concepts in silicon growth: improved initial quality and thin films; and silicon solar cell design opportunities.

  19. The pilus usher controls protein interactions via domain masking and is functional as an oligomer

    SciTech Connect (OSTI)

    Werneburg, Glenn T.; Li, Huilin; Henderson, Nadine S.; Portnoy, Erica B.; Sarowar, Samema; Hultgren, Scott J.; Thanassi, David G.

    2015-06-08

    The chaperone/usher (CU) pathway is responsible for biogenesis of organelles termed pili or fimbriae in Gram-negative bacteria. Type 1 pili expressed by uropathogenic Escherichia coli are prototypical structures assembled by the CU pathway. Assembly and secretion of pili by the CU pathway requires a dedicated periplasmic chaperone and a multidomain outer membrane protein termed the usher (FimD). We show that the FimD C-terminal domains provide the high-affinity substrate binding site, but that these domains are masked in the resting usher. Domain masking requires the FimD plug domain, which served as a central switch controlling usher activation. In addition, we demonstrate that usher molecules can act in trans for pilus biogenesis, providing conclusive evidence for a functional usher oligomer. These results reveal mechanisms by which molecular machines such as the usher regulate and harness protein-protein interactions, and suggest that ushers may interact in a cooperative manner during pilus assembly in bacteria.

  20. The pilus usher controls protein interactions via domain masking and is functional as an oligomer

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Werneburg, Glenn T.; Li, Huilin; Henderson, Nadine S.; Portnoy, Erica B.; Sarowar, Samema; Hultgren, Scott J.; Thanassi, David G.

    2015-06-08

    The chaperone/usher (CU) pathway is responsible for biogenesis of organelles termed pili or fimbriae in Gram-negative bacteria. Type 1 pili expressed by uropathogenic Escherichia coli are prototypical structures assembled by the CU pathway. Assembly and secretion of pili by the CU pathway requires a dedicated periplasmic chaperone and a multidomain outer membrane protein termed the usher (FimD). We show that the FimD C-terminal domains provide the high-affinity substrate binding site, but that these domains are masked in the resting usher. Domain masking requires the FimD plug domain, which served as a central switch controlling usher activation. In addition, we demonstratemore » that usher molecules can act in trans for pilus biogenesis, providing conclusive evidence for a functional usher oligomer. These results reveal mechanisms by which molecular machines such as the usher regulate and harness protein-protein interactions, and suggest that ushers may interact in a cooperative manner during pilus assembly in bacteria.« less

  1. Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

    SciTech Connect (OSTI)

    Li, Hu; Muraki, Yu; Karahashi, Kazuhiro; Hamaguchi, Satoshi

    2015-07-15

    Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH{sub 3}) or methanol (CH{sub 3}OH) plasmas have been examined by mass-selected ion beam experiments with in-situ surface analyses. It has been suggested in earlier studies that etching of magnetic materials, i.e., Fe, Ni, Co, and their alloys, by such plasmas is mostly due to physical sputtering and etch selectivity of the process arises from etch resistance (i.e., low-sputtering yield) of the hard mask materials such as Ta. In this study, it is shown that, during Ta etching by energetic CO{sup +} or N{sup +} ions, suboxides or subnitrides are formed on the Ta surface, which reduces the apparent sputtering yield of Ta. It is also shown that the sputtering yield of Ta by energetic CO{sup +} or N{sup +} ions has a strong dependence on the angle of ion incidence, which suggests a correlation between the sputtering yield and the oxidation states of Ta in the suboxide or subnitride; the higher the oxidation state of Ta, the lower is the sputtering yield. These data account for the observed etch selectivity by CO/NH{sub 3} and CH{sub 3}OH plasmas.

  2. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  3. Phase-Field Simulations of GaN Growth by Selective Area Epitaxy on Complex Mask Geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaNgrowth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  4. Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks andmore » processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.« less

  5. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Thornton, Katsuyo; Coltrin, Michael E.; Han, Jung

    2015-05-21

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  6. Defect-free ultrahigh flux asymmetric membranes

    DOE Patents [OSTI]

    Pinnau, Ingo; Koros, William J.

    1990-01-01

    Defect-free, ultrahigh flux integrally-skinned asymmetric membranes having extremely thin surface layers (<0.2 .mu.m) comprised of glassy polymers are disclosed. The membranes are formed by casting an appropriate drope followed by forced convective evaporation of solvent to obtain a dry phase separated asymmetrical structure. The structure is then washed in a precipitation liquid and dried.

  7. Radiation-Hardened Circuitry Using Mask-Programmable Analog Arrays. Final Report

    SciTech Connect (OSTI)

    Britton, Jr., Charles L.; Ericson, Milton Nance; Bobrek, Miljko; Blalock, Benjamin

    2015-12-01

    As the recent accident at Fukushima Daiichi so vividly demonstrated, telerobotic technologies capable of withstanding high radiation environments need to be readily available to enable operations, repair, and recovery under severe accident scenarios where human entry is extremely dangerous or not possible. Telerobotic technologies that enable remote operation in high dose rate environments have undergone revolutionary improvement over the past few decades. However, much of this technology cannot be employed in nuclear power environments due the radiation sensitivity of the electronics and the organic insulator materials currently in use. This is the final report of the activities involving the NEET 2 project Radiation Hardened Circuitry Using Mask-Programmable Analog Arrays. We present a detailed functional block diagram of the proposed data acquisition system, the thought process leading to technical decisions, the implemented system, and the tested results from the systems. This system will be capable of monitoring at least three parameters of importance to nuclear reactor monitoring: temperature, radiation level, and pressure.

  8. Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

    SciTech Connect (OSTI)

    Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schröder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk; Lu, M.; Stein, A.; Ruggiero, C. A.; Salzman, J.; Kalish, R.

    2014-11-24

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 10{sup 6}) photonic crystal cavities with low mode volume (V{sub m} = 1.062 × (λ/n){sup 3}), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 10{sup 3}.

  9. Experimental demonstration of line-width modulation in plasmonic lithography using a solid immersion lens-based active nano-gap control

    SciTech Connect (OSTI)

    Lee, Won-Sup; Kim, Taeseob; Choi, Guk-Jong; Lim, Geon; Joe, Hang-Eun; Gang, Myeong-Gu; Min, Byung-Kwon; Park, No-Cheol; Moon, Hyungbae; Kim, Do-Hyung; Park, Young-Pil

    2015-02-02

    Plasmonic lithography has been used in nanofabrication because of its utility beyond the diffraction limit. The resolution of plasmonic lithography depends on the nano-gap between the nanoaperture and the photoresist surface—changing the gap distance can modulate the line-width of the pattern. In this letter, we demonstrate solid-immersion lens based active non-contact plasmonic lithography, applying a range of gap conditions to modulate the line-width of the pattern. Using a solid-immersion lens-based near-field control system, the nano-gap between the exit surface of the nanoaperture and the media can be actively modulated and maintained to within a few nanometers. The line-widths of the recorded patterns using 15- and 5-nm gaps were 47 and 19.5 nm, respectively, which matched closely the calculated full-width at half-maximum. From these results, we conclude that changing the nano-gap within a solid-immersion lens-based plasmonic head results in varying line-width patterns.

  10. A NEW ALGORITHM FOR RADIOISOTOPE IDENTIFICATION OF SHIELDED AND MASKED SNM/RDD MATERIALS

    SciTech Connect (OSTI)

    Jeffcoat, R.

    2012-06-05

    Detection and identification of shielded and masked nuclear materials is crucial to national security, but vast borders and high volumes of traffic impose stringent requirements for practical detection systems. Such tools must be be mobile, and hence low power, provide a low false alarm rate, and be sufficiently robust to be operable by non-technical personnel. Currently fielded systems have not achieved all of these requirements simultaneously. Transport modeling such as that done in GADRAS is able to predict observed spectra to a high degree of fidelity; our research is focusing on a radionuclide identification algorithm that inverts this modeling within the constraints imposed by a handheld device. Key components of this work include incorporation of uncertainty as a function of both the background radiation estimate and the hypothesized sources, dimensionality reduction, and nonnegative matrix factorization. We have partially evaluated performance of our algorithm on a third-party data collection made with two different sodium iodide detection devices. Initial results indicate, with caveats, that our algorithm performs as good as or better than the on-board identification algorithms. The system developed was based on a probabilistic approach with an improved approach to variance modeling relative to past work. This system was chosen based on technical innovation and system performance over algorithms developed at two competing research institutions. One key outcome of this probabilistic approach was the development of an intuitive measure of confidence which was indeed useful enough that a classification algorithm was developed based around alarming on high confidence targets. This paper will present and discuss results of this novel approach to accurately identifying shielded or masked radioisotopes with radiation detection systems.

  11. Apparatus and method for detecting defective fuel rods

    SciTech Connect (OSTI)

    Jester, A.; Lawrie, W.E.; Womack, R.E.

    1980-03-18

    Defects in the fuel rods of nuclear fuel assemblies are ascertained and located by ultrasonic means. The fuel assemblies are subjected to ultrasonic waves. Differences in fuel rod resonance is indicative of defective rods.

  12. Defect Analysis of Vehicle Compressed Natural Gas Composite Cylinder

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Defect Analysis of Vehicle Compressed Natural Gas Composite Cylinder A China Paper on Type 4 Cylinder, translated and presented by J. P. Hsu, PhD, Smart Chemistry Reason for Defect ...

  13. Comparative study of defect transition energy calculation methods...

    Office of Scientific and Technical Information (OSTI)

    Comparative study of defect transition energy calculation methods: The case of oxygen vacancy in In2O3 and ZnO Prev Next Title: Comparative study of defect transition energy ...

  14. Vacancy-Driven Anisotropic Defect Distribution in the Battery...

    Office of Scientific and Technical Information (OSTI)

    Vacancy-Driven Anisotropic Defect Distribution in the Battery-Cathode Material LiFePO4 Citation Details In-Document Search Title: Vacancy-Driven Anisotropic Defect Distribution in ...

  15. Impact of polymer film thickness and cavity size on polymer flow during embossing : towards process design rules for nanoimprint lithography.

    SciTech Connect (OSTI)

    Schunk, Peter Randall; King, William P. (Georgia Institute of Technology, Atlanta, GA); Sun, Amy Cha-Tien; Rowland, Harry D.

    2006-08-01

    This paper presents continuum simulations of polymer flow during nanoimprint lithography (NIL). The simulations capture the underlying physics of polymer flow from the nanometer to millimeter length scale and examine geometry and thermophysical process quantities affecting cavity filling. Variations in embossing tool geometry and polymer film thickness during viscous flow distinguish different flow driving mechanisms. Three parameters can predict polymer deformation mode: cavity width to polymer thickness ratio, polymer supply ratio, and Capillary number. The ratio of cavity width to initial polymer film thickness determines vertically or laterally dominant deformation. The ratio of indenter width to residual film thickness measures polymer supply beneath the indenter which determines Stokes or squeeze flow. The local geometry ratios can predict a fill time based on laminar flow between plates, Stokes flow, or squeeze flow. Characteristic NIL capillary number based on geometry-dependent fill time distinguishes between capillary or viscous driven flows. The three parameters predict filling modes observed in published studies of NIL deformation over nanometer to millimeter length scales. The work seeks to establish process design rules for NIL and to provide tools for the rational design of NIL master templates, resist polymers, and process parameters.

  16. Excess Oxygen Defects in Layered Cuprates

    DOE R&D Accomplishments [OSTI]

    Lightfoot, P.; Pei, S. Y.; Jorgensen, J. D.; Manthiram, A.; Tang, X. X.; Goodenough, J. B.

    1990-09-01

    Neutron powder diffraction has been used to study the oxygen defect chemistry of two non-superconducting layered cuprates, La{sub 1. 25}Dy{sub 0.75}Cu{sub 3.75}F{sub 0.5}, having a T{sup {asterisk}}- related structure, and La{sub 1.85}Sr{sub 1.15}Cu{sub 2}O{sub 6.25}, having a structure related to that of the newly discovered double-layer superconductor La{sub 2-x}Sr{sub x}CaCu{sub 2}O{sub 6}. The role played by oxygen defects in determining the superconducting properties of layered cuprates is discussed.

  17. Automated Diagnosis and Classification of Steam Generator Tube Defects

    SciTech Connect (OSTI)

    Dr. Gabe V. Garcia

    2004-10-01

    A major cause of failure in nuclear steam generators is tube degradation. Tube defects are divided into seven categories, one of which is intergranular attack/stress corrosion cracking (IGA/SCC). Defects of this type usually begin on the outer surface of the tubes and propagate both inward and laterally. In many cases these defects occur at or near the tube support plates. Several different methods exist for the nondestructive evaluation of nuclear steam generator tubes for defect characterization.

  18. NREL Theorizes Defects Could Improve Solar Cells - News Releases | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NREL Theorizes Defects Could Improve Solar Cells January 12, 2016 Drawing of of a good defect. Schematic of a 'good' defect (red cross), which helps collection of electrons from photo-absorber (n-Si), and blocks the holes, hence suppresses carriers recombination. Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) are studying what may seem paradoxical - certain defects in silicon solar cells may actually improve their performance. The findings run counter to

  19. Research Challenge 4: Defect-Carrier Interactions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4: Defect-Carrier Interactions - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs

  20. A single-molecule approach to ZnO defect studies: Single photons and single defects

    SciTech Connect (OSTI)

    Jungwirth, N. R.; Pai, Y. Y.; Chang, H. S.; MacQuarrie, E. R.; Nguyen, K. X.; Fuchs, G. D.

    2014-07-28

    Investigations that probe defects one at a time offer a unique opportunity to observe properties and dynamics that are washed out of ensemble measurements. Here, we present confocal fluorescence measurements of individual defects in ZnO nanoparticles and sputtered films that are excited with sub-bandgap energy light. Photon correlation measurements yield both antibunching and bunching, indicative of single-photon emission from isolated defects that possess a metastable shelving state. The single-photon emission is in the range of ?560720?nm and typically exhibits two broad spectral peaks separated by ?150?meV. The excited state lifetimes range from 1 to 13?ns, consistent with the finite-size and surface effects of nanoparticles and small grains. We also observe discrete jumps in the fluorescence intensity between a bright state and a dark state. The dwell times in each state are exponentially distributed and the average dwell time in the bright (dark) state does (may) depend on the power of the exciting laser. Taken together, our measurements demonstrate the utility of a single-molecule approach to semiconductor defect studies and highlight ZnO as a potential host material for single-defect based applications.

  1. Native defects in Tl6SI4: Density functional calculations

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shi, Hongliang; Du, Mao -Hua

    2015-05-05

    In this study, Tl6SI4 is a promising room-temperature semiconductor radiation detection material. Here, we report density functional calculations of native defects and dielectric properties of Tl6SI4. Formation energies and defect levels of native point defects and defect complexes are calculated. Donor-acceptor defect complexes are shown to be abundant in Tl6SI4. High resistivity can be obtained by Fermi level pinning by native donor and acceptor defects. Deep donors that are detrimental to electron transport are identified and methods to mitigate such problem are discussed. Furthermore, we show that mixed ionic-covalent character of Tl6SI4 gives rise to enhanced Born effective charges andmore » large static dielectric constant, which provides effective screening of charged defects and impurities.« less

  2. The role of point defects and defect complexes in silicon device processing. Summary report and papers

    SciTech Connect (OSTI)

    Sopori, B.; Tan, T.Y.

    1994-08-01

    This report is a summary of a workshop hold on August 24--26, 1992. Session 1 of the conference discussed characteristics of various commercial photovoltaic silicon substrates, the nature of impurities and defects in them, and how they are related to the material growth. Session 2 on point defects reviewed the capabilities of theoretical approaches to determine equilibrium structure of defects in the silicon lattice arising from transitional metal impurities and hydrogen. Session 3 was devoted to a discussion of the surface photovoltaic method for characterizing bulk wafer lifetimes, and to detailed studies on the effectiveness of various gettering operations on reducing the deleterious effects of transition metals. Papers presented at the conference are also included in this summary report.

  3. Method of identifying defective particle coatings

    DOE Patents [OSTI]

    Cohen, Mark E.; Whiting, Carlton D.

    1986-01-01

    A method for identifying coated particles having defective coatings desig to retain therewithin a build-up of gaseous materials including: (a) Pulling a vacuum on the particles; (b) Backfilling the particles at atmospheric pressure with a liquid capable of wetting the exterior surface of the coated particles, said liquid being a compound which includes an element having an atomic number higher than the highest atomic number of any element in the composition which forms the exterior surface of the particle coating; (c) Drying the particles; and (d) Radiographing the particles. By television monitoring, examination of the radiographs is substantially enhanced.

  4. The role of variation, error, and complexity in manufacturing defects

    SciTech Connect (OSTI)

    Hinckley, C.M.; Barkan, P.

    1994-03-01

    Variation in component properties and dimensions is a widely recognized factor in product defects which can be quantified and controlled by Statistical Process Control methodologies. Our studies have shown, however, that traditional statistical methods are ineffective in characterizing and controlling defects caused by error. The distinction between error and variation becomes increasingly important as the target defect rates approach extremely low values. Motorola data substantiates our thesis that defect rates in the range of several parts per million can only be achieved when traditional methods for controlling variation are combined with methods that specifically focus on eliminating defects due to error. Complexity in the product design, manufacturing processes, or assembly increases the likelihood of defects due to both variation and error. Thus complexity is also a root cause of defects. Until now, the absence of a sound correlation between defects and complexity has obscured the importance of this relationship. We have shown that assembly complexity can be quantified using Design for Assembly (DFA) analysis. High levels of correlation have been found between our complexity measures and defect data covering tens of millions of assembly operations in two widely different industries. The availability of an easily determined measure of complexity, combined with these correlations, permits rapid estimation of the relative defect rates for alternate design concepts. This should prove to be a powerful tool since it can guide design improvement at an early stage when concepts are most readily modified.

  5. Computer programs for eddy-current defect studies

    SciTech Connect (OSTI)

    Pate, J. R.; Dodd, C. V.

    1990-06-01

    Several computer programs to aid in the design of eddy-current tests and probes have been written. The programs, written in Fortran, deal in various ways with the response to defects exhibited by four types of probes: the pancake probe, the reflection probe, the circumferential boreside probe, and the circumferential encircling probe. Programs are included which calculate the impedance or voltage change in a coil due to a defect, which calculate and plot the defect sensitivity factor of a coil, and which invert calculated or experimental readings to obtain the size of a defect. The theory upon which the programs are based is the Burrows point defect theory, and thus the calculations of the programs will be more accurate for small defects. 6 refs., 21 figs.

  6. Structural phase transitions and topological defects in ion Coulomb crystals

    SciTech Connect (OSTI)

    Partner, Heather L.; Nigmatullin, Ramil; Burgermeister, Tobias; Keller, Jonas; Pyka, Karsten; Plenio, Martin B.; Retzker, Alex; Zurek, Wojciech Hubert; del Campo, Adolfo; Mehlstaubler, Tanja E.

    2014-11-19

    We use laser-cooled ion Coulomb crystals in the well-controlled environment of a harmonic radiofrequency ion trap to investigate phase transitions and defect formation. Topological defects in ion Coulomb crystals (kinks) have been recently proposed for studies of nonlinear physics with solitons and as carriers of quantum information. Defects form when a symmetry breaking phase transition is crossed non-adiabatically. For a second order phase transition, the Kibble-Zurek mechanism predicts that the formation of these defects follows a power law scaling in the rate of the transition. We demonstrate a scaling of defect density and describe kink dynamics and stability. We further discuss the implementation of mass defects and electric fields as first steps toward controlled kink preparation and manipulation.

  7. Power spectrum analysis for defect screening in integrated circuit devices

    DOE Patents [OSTI]

    Tangyunyong, Paiboon; Cole Jr., Edward I.; Stein, David J.

    2011-12-01

    A device sample is screened for defects using its power spectrum in response to a dynamic stimulus. The device sample receives a time-varying electrical signal. The power spectrum of the device sample is measured at one of the pins of the device sample. A defect in the device sample can be identified based on results of comparing the power spectrum with one or more power spectra of the device that have a known defect status.

  8. Supercomputers Help Identify Efficiency-Limiting Defects in LEDs

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Supercomputers Help Identify Efficiency-Limiting Defects in LEDs Supercomputers Help Identify Efficiency-Limiting Defects in LEDs July 18, 2016 Contact: Kathy Kincade, kkincade@lbl.gov, +1 510 495 2124 ChrisVanDerWalle PressReleaseImage A conceptual illustration of how defects in a crystal lattice might contribute to nonradiative recombination of electrons and holes in LEDs. Image: Peter Allen Light-emitting diodes (LEDs) have found firm footing in the lighting industry, not just for blue and

  9. Nanofabrication of sharp diamond tips by e-beam lithography and inductively coupled plasma reactive ion etching.

    SciTech Connect (OSTI)

    Moldovan, N.; Divan, R.; Zeng, H.; Carlisle, J. A.; Advanced Diamond Tech.

    2009-12-07

    Ultrasharp diamond tips make excellent atomic force microscopy probes, field emitters, and abrasive articles due to diamond's outstanding physical properties, i.e., hardness, low friction coefficient, low work function, and toughness. Sharp diamond tips are currently fabricated as individual tips or arrays by three principal methods: (1) focused ion beam milling and gluing onto a cantilever of individual diamond tips, (2) coating silicon tips with diamond films, or (3) molding diamond into grooves etched in a sacrificial substrate, bonding the sacrificial substrate to another substrate or electrodepositing of a handling chip, followed by dissolution of the sacrificial substrate. The first method is tedious and serial in nature but does produce very sharp tips, the second method results in tips whose radius is limited by the thickness of the diamond coating, while the third method involves a costly bonding and release process and difficulties in thoroughly filling the high aspect ratio apex of molding grooves with diamond at the nanoscale. To overcome the difficulties with these existing methods, this article reports on the feasibility of the fabrication of sharp diamond tips by direct etching of ultrananocrystalline diamond (UNCD{reg_sign}) as a starting and structural material. The UNCD is reactive ion etched using a cap-precursor-mask scheme. An optimized etching recipe demonstrates the formation of ultrasharp diamond tips ({approx} 10 nm tip radius) with etch rates of 650 nm/min.

  10. Center for Defect Physics in Structural Materials - CDP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    LLNL Research Atomic and magnetic interactions treated using ab initio density functional theory (DFT). Quantum Monte Carlo (QMC) calculations of defect structures and energetics...

  11. Influence of Surface Orientation and Defects on Early Stage Oxidation...

    Office of Scientific and Technical Information (OSTI)

    Influence of Surface Orientation and Defects on Early Stage Oxidation and Ultrathin Oxide Growth on Pure Copper Citation Details In-Document Search Title: Influence of Surface ...

  12. Suppress Carrier Recombination by Introducing Defects: The Case...

    Office of Scientific and Technical Information (OSTI)

    The Case of Si Solar Cell Citation Details In-Document Search Title: Suppress Carrier Recombination by Introducing Defects: The Case of Si Solar Cell Authors: Liu, Yuanyue ; ...

  13. Design of defect spins in piezoelectric aluminum nitride for...

    Office of Scientific and Technical Information (OSTI)

    Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum ... Language: English Subject: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS electronic ...

  14. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  15. The Interplay Between Surface Hydrogen and Defect Propagation...

    Office of Scientific and Technical Information (OSTI)

    The Interplay Between Surface Hydrogen and Defect Propagation in Si Nanowire Kinking Superstructures Citation Details In-Document Search Title: The Interplay Between Surface ...

  16. Thermal Hydraulic Characteristics of Fuel Defects in Plate Type...

    Office of Scientific and Technical Information (OSTI)

    in Plate Type Nuclear Research Reactors Citation Details In-Document Search Title: Thermal Hydraulic Characteristics of Fuel Defects in Plate Type Nuclear Research Reactors ...

  17. Energetics of Defects on Graphene through Fluorination

    SciTech Connect (OSTI)

    Xiao, Jie; Meduri, Praveen; Chen, Honghao; Wang, Zhiguo; Gao, Fei; Hu, Jian Z.; Feng, Ju; Hu, Mary Y.; Dai, Sheng; Brown, Suree; Adcock, Jamie L.; Deng, Zhiqun; Liu, Jun; Graff, Gordon L.; Aksay, Ilhan A.; Zhang, Jiguang

    2014-04-01

    In the present study, we used FGS[5] as the substrate and implemented low temperature (<=150 oC) direct fluorination on graphene sheets. The fluorine content has been modulated to investigate the formation mechanism of different functional groups such as C-F, CF2, O-CF2 and (C=O)F during the fluorination process. The detailed structure and chemical bonds were simulated theoretically and quantified experimentally by using density function theory (DFT) calculations and NMR techniques, respectively. The adjustable power/energy ratio from fluorinated graphene as cathode for primary lithium batteries is also discussed. From a combination of NMR spectroscopy and theoretical calculation, we conclude that the topological defects without oxygen containing groups provide most of the reactive sites to react with F. FGS also contain a small number of COOH groups which contribute for the fluorination reaction. Hydroxyl or epoxy groups contribute to another fraction of the reaction products.

  18. A new casting defect healing technology

    SciTech Connect (OSTI)

    Hodge, E.S.; Reddoch, T.W.; Viswanathan, S.

    1997-01-01

    A new technology is presented for healing of defects in 356 aluminium alloys that provides economic upgrading of these cast alloys. It uses pneumatic isostatic forging (PIF) to produce high quality Al alloys products with enhanced mechanical properties uniform throughout the part, allowing higher design allowables and increased usage of Al alloy castings. The fundamental mechanism underlying PIF is a single mode plastic deformation process that uses isostatic application of pressures for 10-30 seconds at temperature. The process can be integrated in-line with other production operations, i.e., using the latent heat from the previous casting step. Results of applying the PIF process indicate lower cost and significant improvement in mechanical properties that rival and often exceed corresponding properties of other technologies like hot isostatic pressing and related processes. This process offers many advantages that are described in this paper in addition to presenting case histories of property enhancement by PIF and the mechanism responsible for property enhancement.

  19. Defect behavior of polycrystalline solar cell silicon

    SciTech Connect (OSTI)

    Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P.

    1993-05-01

    The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

  20. Nonradiative coherent carrier captures and defect reaction at deep-level defects via phonon-kick mechanism

    SciTech Connect (OSTI)

    Wakita, Masaki; Suzuki, Kei; Shinozuka, Yuzo

    2014-02-21

    We simulated the time evolution of electron-lattice coupling mode, and a series of nonradiative carrier captures by a deep-level defect in a semiconductor. For lattice relaxation energy of the order of the band gap, a series of coherent (athermal) electron and hole captures by a defect is possible for high carrier densities, which results in an inflation in the induced lattice vibration, which in turn enhances a defect reaction.

  1. Radiation-Hardened Circuitry Using Mask-Programmable Analog Arrays. Report 3

    SciTech Connect (OSTI)

    Britton, Jr, Charles L.; Shelton, Jacob H.; Ericson, Milton Nance; Blalock, Benjamin

    2015-03-01

    As the recent accident at Fukushima Daiichi so vividly demonstrated, telerobotic technologies capable of withstanding high radiation environments need to be readily available to enable operations, repair, and recovery under severe accident scenarios when human entry is extremely dangerous or not possible. Telerobotic technologies that enable remote operation in high dose rate environments have undergone revolutionary improvement over the past few decades. However, much of this technology cannot be employed in nuclear power environments because of the radiation sensitivity of the electronics and the organic insulator materials currently in use. This is a report of the activities involving Task 3 of the Nuclear Energy Enabling Technologies (NEET) 2 project Radiation Hardened Circuitry Using Mask-Programmable Analog Arrays [1]. Evaluation of the performance of the system for both pre- and post-irradiation as well as operation at elevated temperature will be performed. Detailed performance of the system will be documented to ensure the design meets requirements prior to any extended evaluation. A suite of tests will be developed which will allow evaluation before and after irradiation and during temperature. Selection of the radiation exposure facilities will be determined in the early phase of the project. Radiation exposure will consist of total integrated dose (TID) up to 200 kRad or above with several intermediate doses during test. Dose rates will be in various ranges determined by the facility that will be used with a target of 30 kRad/hr. Many samples of the pre-commercial devices to be used will have been tested in previous projects to doses of at least 300 kRad and temperatures up to 125C. The complete systems will therefore be tested for performance at intermediate doses. Extended temperature testing will be performed up to the limit of the commercial sensors. The test suite performed at each test point will consist of operational testing of the three basic

  2. Solvent Immersion Imprint Lithography

    SciTech Connect (OSTI)

    Vasdekis, Andreas E.; Wilkins, Michael J.; Grate, Jay W.; Kelly, Ryan T.; Konopka, Allan; Xantheas, Sotiris S.; Chang, M. T.

    2014-06-21

    The mechanism of polymer disolution was explored for polymer microsystem prototyping, including microfluidics and optofluidics. Polymer films are immersed in a solvent, imprinted and finally brought into contact with a non-modified surface to permanently bond. The underlying polymer-solvent interactions were experimentally and theoretically investigated, and enabled rapid polymer microsystem prototyping. During imprinting, small molecule integration in the molded surfaces was feasible, a principle applied to oxygen sensing. Polystyrene (PS) was employed for microbiological studies at extreme environmental conditions. The thermophile anaerobe Clostridium Thermocellum was grown in PS pore-scale micromodels, revealing a double mean generation lifetime than under ideal culture conditions. Microsystem prototyping through directed polymer dissolution is simple and accessible, while simultaneous patterning, bonding, and surface/volume functionalization are possible in less than one minute.

  3. Point defects and ion migration in PbFCl

    SciTech Connect (OSTI)

    Islam, M.S. )

    1990-04-01

    Atomistic simulation techniques have been applied to PbFCl in order to calculate the energetics of defect formation and ion transport mechanisms in the undoped material. Schottky-like disorder is computed to be the dominant ionic defect. The activation energies for a variety of anion vacancy migration mechanisms are calculated and found to be in good agreement with experiment.

  4. Simple intrinsic defects in InAs : numerical predictions.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2013-03-01

    This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

  5. Temperature dependence of carrier capture by defects in gallium arsenide

    SciTech Connect (OSTI)

    Wampler, William R.; Modine, Normand A.

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  6. Ultrasonic generator and detector using an optical mask having a grating for launching a plurality of spatially distributed, time varying strain pulses in a sample

    DOE Patents [OSTI]

    Maris, Humphrey J.

    2003-01-01

    A method and a system are disclosed for determining at least one characteristic of a sample that contains a substrate and at least one film disposed on or over a surface of the substrate. The method includes a first step of placing a mask over a free surface of the at least one film, where the mask has a top surface and a bottom surface that is placed adjacent to the free surface of the film. The bottom surface of the mask has formed therein or thereon a plurality of features for forming at least one grating. A next step directs optical pump pulses through the mask to the free surface of the film, where individual ones of the pump pulses are followed by at least one optical probe pulse. The pump pulses are spatially distributed by the grating for launching a plurality of spatially distributed, time varying strain pulses within the film, which cause a detectable change in optical constants of the film. A next step detects a reflected or a transmitted portion of the probe pulses, which are also spatially distributed by the grating. A next step measures a change in at least one characteristic of at least one of reflected or transmitted probe pulses due to the change in optical constants, and a further step determines the at least one characteristic of the sample from the measured change in the at least one characteristic of the probe pulses. An optical mask is also disclosed herein, and forms a part of these teachings.

  7. Ultrasonic generator and detector using an optical mask having a grating for launching a plurality of spatially distributed, time varying strain pulses in a sample

    DOE Patents [OSTI]

    Maris, Humphrey J.

    2002-01-01

    A method and a system are disclosed for determining at least one characteristic of a sample that contains a substrate and at least one film disposed on or over a surface of the substrate. The method includes a first step of placing a mask over a free surface of the at least one film, where the mask has a top surface and a bottom surface that is placed adjacent to the free surface of the film. The bottom surface of the mask has formed therein or thereon a plurality of features for forming at least one grating. A next step directs optical pump pulses through the mask to the free surface of the film, where individual ones of the pump pulses are followed by at least one optical probe pulse. The pump pulses are spatially distributed by the grating for launching a plurality of spatially distributed, time varying strain pulses within the film, which cause a detectable change in optical constants of the film. A next step detects a reflected or a transmitted portion of the probe pulses, which are also spatially distributed by the grating. A next step measures a change in at least one characteristic of at least one of reflected or transmitted probe pulses due to the change in optical constants, and a further step determines the at least one characteristic of the sample from the measured change in the at least one characteristic of the probe pulses. An optical mask is also disclosed herein, and forms a part of these teachings.

  8. Gate dielectric degradation: Pre-existing vs. generated defects

    SciTech Connect (OSTI)

    Veksler, Dmitry E-mail: gennadi.bersuker@sematech.org; Bersuker, Gennadi E-mail: gennadi.bersuker@sematech.org

    2014-01-21

    We consider the possibility that degradation of the electrical characteristics of high-k gate stacks under low voltage stresses of practical interest is caused primarily by activation of pre-existing defects rather than generation of new ones. In nFETs in inversion, in particular, defect activation is suggested to be associated with the capture of an injected electron: in this charged state, defects can participate in a fast exchange of charge carriers with the carrier reservoir (substrate or gate electrode) that constitutes the physical process underlying a variety of electrical measurements. The degradation caused by the activation of pre-existing defects, as opposed to that of new defect generation, is both reversible and exhibits a tendency to saturate through the duration of stress. By using the multi-phonon assisted charge transport description, it is demonstrated that the trap activation concept allows reproducing a variety of experimental results including stress time dependency of the threshold voltage, leakage current, charge pumping current, and low frequency noise. Continuous, long-term degradation described by the power law time dependency is shown to be determined by the activation of defects located in the interfacial SiO{sub 2} layer of the high-k gate stacks. The findings of this study can direct process optimization efforts towards reduction of as-grown precursors of the charge trapping defects as the major factor affecting reliability.

  9. An orbital angular momentum radio communication system optimized by intensity controlled masks effectively: Theoretical design and experimental verification

    SciTech Connect (OSTI)

    Gao, Xinlu; Huang, Shanguo Wei, Yongfeng; Zhai, Wensheng; Xu, Wenjing; Yin, Shan; Gu, Wanyi; Zhou, Jing

    2014-12-15

    A system of generating and receiving orbital angular momentum (OAM) radio beams, which are collectively formed by two circular array antennas (CAAs) and effectively optimized by two intensity controlled masks, is proposed and experimentally investigated. The scheme is effective in blocking of the unwanted OAM modes and enhancing the power of received radio signals, which results in the capacity gain of system and extended transmission distance of the OAM radio beams. The operation principle of the intensity controlled masks, which can be regarded as both collimator and filter, is feasible and simple to realize. Numerical simulations of intensity and phase distributions at each key cross-sectional plane of the radio beams demonstrate the collimated results. The experimental results match well with the theoretical analysis and the receive distance of the OAM radio beam at radio frequency (RF) 20 GHz is extended up to 200 times of the wavelength of the RF signals, the measured distance is 5 times of the original measured distance. The presented proof-of-concept experiment demonstrates the feasibility of the system.

  10. Modeling of casting microstructures and defects

    SciTech Connect (OSTI)

    Shapiro, A.B.; Summers, L.T.; Eckels, D.J.; Sahai, V.

    1997-09-26

    Casting is an ancient art that has been a trial-and-error process for more than 4000 years. To predict the size, shape, and quality of a cast product, casting manufacturers typically cast full-size prototypes. If one part of the process is done incorrectly, the entire process is repeated until an acceptable product is achieved. One way to reduce the time, cost, and waste associated with casting is to use computer modeling to predict not only the quality of a product on the macro- scale, such as distortion and part shape, but also on the micro-scale such as grain defects. Modeling of solidification is becoming increasingly feasible with the advent of parallel computers. There are essentially two approaches to solidification modeling.The first is that of macro-modeling where heat transfer codes model latent heat release during solidification as a constant and based solely on the local temperature. This approach is useful in predicting large scale distortion and final part shape. The second approach, micro-modeling, is more fundamental. The micro-models estimate the latent heat release during solidification using nucleation and grain growth kinetics. Micro-models give insight into cast grain morphology and show promise in the future to predict engineering properties such as tensile strength. The micro-model solidification kinetics can be evaluated using first principles or they can be evaluated using experiments. This work describes an implementation of a micro-model for uranium which uses experimental results to estimate nucleation and growth kinetics.

  11. Heavy and Overweight Vehicle Defects Interim Report

    SciTech Connect (OSTI)

    Siekmann, Adam; Capps, Gary J

    2012-12-01

    The Federal Highway Administration (FHWA), along with the Federal Motor Carrier Safety Administration (FMCSA), has an interest in overweight commercial motor vehicles, how they affect infrastructure, and their impact on safety on the nation s highways. To assist both FHWA and FMCSA in obtaining more information related to this interest, data was collected and analyzed from two separate sources. A large scale nationwide data collection effort was facilitated by the Commercial Vehicle Safety Alliance as part of a special study on overweight vehicles and an additional, smaller set, of data was collected from the state of Tennessee which included a much more detailed set of data. Over a six-month period, 1,873 Level I inspections were performed in 18 different states that volunteered to be a part of this study. Of the 1,873 inspections, a vehicle out-of-service (OOS) violation was found on 44.79% of the vehicles, a rate significantly higher than the national OOS rate of 27.23%. The main cause of a vehicle being placed OOS was brake-related defects, with approximately 30% of all vehicles having an OOS brake violation. Only about 4% of vehicles had an OOS tire violation, and even fewer had suspension and wheel violations. Vehicle weight violations were most common on an axle group as opposed to a gross vehicle weight violation. About two thirds of the vehicles cited with a weight violation were overweight on an axle group with an average amount of weight over the legal limit of about 2,000 lbs. Data collection is scheduled to continue through January 2014, with more potentially more states volunteering to collect data. More detailed data collections similar to the Tennessee data collection will also be performed in multiple states.

  12. Probing graphene defects and estimating graphene quality with optical microscopy

    SciTech Connect (OSTI)

    Lai, Shen; Kyu Jang, Sung; Jae Song, Young; Lee, Sungjoo

    2014-01-27

    We report a simple and accurate method for detecting graphene defects that utilizes the mild, dry annealing of graphene/Cu films in air. In contrast to previously reported techniques, our simple approach with optical microscopy can determine the density and degree of dislocation of defects in a graphene film without inducing water-related damage or functionalization. Scanning electron microscopy, confocal Raman and atomic force microscopy, and X-ray photoelectron spectroscopy analysis were performed to demonstrate that our nondestructive approach to characterizing graphene defects with optimized thermal annealing provides rapid and comprehensive determinations of graphene quality.

  13. Nanofiltration across Defect-Sealed Nanoporous Monolayer Graphene

    SciTech Connect (OSTI)

    O'Hern, Sean C.; Jang, Doojoon; Bose, Suman; Idrobo Tapia, Juan Carlos; Song, Yi; Laoui, Tahar; Kong, Jing; Karnik, Rohit

    2015-04-27

    Monolayer nanoporous graphene represents an ideal membrane for molecular separations, but its practical realization is impeded by leakage through defects in the ultrathin graphene. Here, we report a multiscale leakage-sealing process that exploits the nonpolar nature and impermeability of pristine graphene to selectively block defects, resulting in a centimeter-scale membrane that can separate two fluid reservoirs by an atomically thin layer of graphene. After introducing subnanometer pores in graphene, the membrane exhibited rejection of multivalent ions and small molecules and water flux consistent with prior molecular dynamics simulations. The results indicate the feasibility of constructing defect-tolerant monolayer graphene membranes for nanofiltration, desalination, and other separation processes.

  14. Formation of Nanopore-Arrays by Plasma-based Thin FilmDeposition...

    Office of Scientific and Technical Information (OSTI)

    beam lithography, DNA sequencing, single ion implantations, and single molecule studies. ... Such arrays of nanopores can serve as membrane channels for DNA sequencing, as masks in ...

  15. SU-E-T-603: Analysis of Optical Tracked Head Inter-Fraction Movements Within Masks to Access Intracranial Immobilization Techniques in Proton Therapy

    SciTech Connect (OSTI)

    Hsi, W; Zeidan, O

    2014-06-01

    Purpose: We present a quantitative methodology utilizing an optical tracking system for monitoring head inter-fraction movements within brain masks to assess the effectiveness of two intracranial immobilization techniques. Methods and Materials: A 3-point-tracking method was developed to measure the mask location for a treatment field at each fraction. Measured displacement of mask location to its location at first fraction is equivalent to the head movement within the mask. Head movements for each of treatment fields were measured over about 10 fractions at each patient for seven patients; five treated in supine and two treated in prone. The Q-fix Base-of-Skull head frame was used in supine while the CIVCO uni-frame baseplate was used in prone. Displacements of recoded couch position of each field post imaging at each fraction were extracted for those seven patients. Standard deviation (S.D.) of head movements and couch displacements was scored for statistical analysis. Results: The accuracy of 3PtTrack method was within 1.0 mm by phantom measurements. Patterns of head movement and couch displacement were similar for patients treated in either supine or prone. In superior-inferior direction, mean value of scored standard deviations over seven patients were 1.6 mm and 3.4 mm for the head movement and the couch displacement, respectively. The result indicated that the head movement combined with a loose fixation between the mask-to-head frame results large couch displacements for each patient, and also large variation between patients. However, the head movement is the main cause for the couch displacement with similar magnitude of around 1.0 mm in anterior-posterior and lateral directions. Conclusions: Optical-tracking methodology independently quantifying head movements could improve immobilization devices by correctly acting on causes for head motions within mask. A confidence in the quality of intracranial immobilization techniques could be more efficient by

  16. Modeling and experimental characterization of stepped and v-shaped (311) defects in silicon

    SciTech Connect (OSTI)

    Marqus, Luis A. Aboy, Mara; Dudeck, Karleen J.; Botton, Gianluigi A.; Knights, Andrew P.; Gwilliam, Russell M.

    2014-04-14

    We propose an atomistic model to describe extended (311) defects in silicon. It is based on the combination of interstitial and bond defect chains. The model is able to accurately reproduce not only planar (311) defects but also defect structures that show steps, bends, or both. We use molecular dynamics techniques to show that these interstitial and bond defect chains spontaneously transform into extended (311) defects. Simulations are validated by comparing with precise experimental measurements on actual (311) defects. The excellent agreement between the simulated and experimentally derived structures, regarding individual atomic positions and shape of the distinct structural (311) defect units, provides strong evidence for the robustness of the proposed model.

  17. Design of defect spins in piezoelectric aluminum nitride for...

    Office of Scientific and Technical Information (OSTI)

    Citation Details In-Document Search Title: Design of defect spins in ... GrantContract Number: AC02-06CH11357 Type: Accepted Manuscript Journal Name: Scientific Reports ...

  18. Mitigation of substrate defects in reticles using multilayer buffer layers

    DOE Patents [OSTI]

    Mirkarimi, Paul B.; Bajt, Sasa; Stearns, Daniel G.

    2001-01-01

    A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.

  19. Fast Diffusion of Native Defects and Impurities in Perovskite...

    Office of Scientific and Technical Information (OSTI)

    in Perovskite Solar Cell Material CH 3 NH 3 PbI 3 Citation Details In-Document Search Title: Fast Diffusion of Native Defects and Impurities in Perovskite Solar Cell Material CH ...

  20. Point defect weakened thermal contraction in monolayer graphene

    SciTech Connect (OSTI)

    Zha, Xian-Hu; Zhang, Rui-Qin; Lin, Zijing

    2014-08-14

    We investigate the thermal expansion behaviors of monolayer graphene and three configurations of graphene with point defects, namely the replacement of one carbon atom with a boron or nitrogen atom, or of two neighboring carbon atoms by boron-nitrogen atoms, based on calculations using first-principles density functional theory. It is found that the thermal contraction of monolayer graphene is significantly decreased by point defects. Moreover, the corresponding temperature for negative linear thermal expansion coefficient with the maximum absolute value is reduced. The cause is determined to be point defects that enhance the mechanical strength of graphene and then reduce the amplitude and phonon frequency of the out-of-plane acoustic vibration mode. Such defect weakening of graphene thermal contraction will be useful in nanotechnology to diminish the mismatching or strain between the graphene and its substrate.

  1. Hot Rolling Scrap Reduction through Edge Cracking and Surface Defects

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Control | Department of Energy Hot Rolling Scrap Reduction through Edge Cracking and Surface Defects Control Hot Rolling Scrap Reduction through Edge Cracking and Surface Defects Control hot_rolling.pdf (541.63 KB) More Documents & Publications ITP Aluminum: Aluminum Industry Roadmap for the Automotive Market (May 1999) Vehicle Technologies Office: 2012 Lightweight Materials R&D Annual Progress Report ITP Aluminum: Aluminum Industry Technology Roadmap

  2. PROJECT PROFILE: Defining the Defect Chemistry and Structural Properties

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Required for 24%-Efficient CdTe Devices | Department of Energy Defining the Defect Chemistry and Structural Properties Required for 24%-Efficient CdTe Devices PROJECT PROFILE: Defining the Defect Chemistry and Structural Properties Required for 24%-Efficient CdTe Devices Funding Opportunity: SuNLaMP SunShot Subprogram: Photovoltaics Location: National Renewable Energy Laboratory, Golden, CO Amount Awarded: $6,900,000 While crystalline silicon accounted for two thirds of the photovoltaic (PV)

  3. Automated defect spatial signature analysis for semiconductor manufacturing process

    DOE Patents [OSTI]

    Tobin, Jr., Kenneth W.; Gleason, Shaun S.; Karnowski, Thomas P.; Sari-Sarraf, Hamed

    1999-01-01

    An apparatus and method for performing automated defect spatial signature alysis on a data set representing defect coordinates and wafer processing information includes categorizing data from the data set into a plurality of high level categories, classifying the categorized data contained in each high level category into user-labeled signature events, and correlating the categorized, classified signature events to a present or incipient anomalous process condition.

  4. Vehicle Technologies Office Merit Review 2015: Electrode Coating Defect

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Analysis and Processing NDE for High-Energy Lithium-Ion Batteries | Department of Energy Electrode Coating Defect Analysis and Processing NDE for High-Energy Lithium-Ion Batteries Vehicle Technologies Office Merit Review 2015: Electrode Coating Defect Analysis and Processing NDE for High-Energy Lithium-Ion Batteries Presentation given by Oak Ridge National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting

  5. Graphene materials having randomly distributed two-dimensional structural defects

    DOE Patents [OSTI]

    2013-10-08

    Graphene-based storage materials for high-power battery applications are provided. The storage materials are composed of vertical stacks of graphene sheets and have reduced resistance for Li ion transport. This reduced resistance is achieved by incorporating a random distribution of structural defects into the stacked graphene sheets, whereby the structural defects facilitate the diffusion of Li ions into the interior of the storage materials.

  6. Graphene materials having randomly distributed two-dimensional structural defects

    DOE Patents [OSTI]

    Kung, Harold H.; Zhao, Xin; Hayner, Cary M.; Kung, Mayfair C.

    2016-05-31

    Graphene-based storage materials for high-power battery applications are provided. The storage materials are composed of vertical stacks of graphene sheets and have reduced resistance for Li ion transport. This reduced resistance is achieved by incorporating a random distribution of structural defects into the stacked graphene sheets, whereby the structural defects facilitate the diffusion of Li ions into the interior of the storage materials.

  7. Defect Analysis of Vehicle Compressed Natural Gas Composite Cylinder |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Defect Analysis of Vehicle Compressed Natural Gas Composite Cylinder Defect Analysis of Vehicle Compressed Natural Gas Composite Cylinder These slides were presented at the Onboard Storage Tank Workshop on April 29, 2010. defectanalysis_naturalgas_ostw.pdf (2.31 MB) More Documents & Publications Safety analysis of in-use vehicle wrapping cylinder International Hydrogen Fuel and Pressure Vessel Forum 2010 Proceedings Type 4 Tank Testing, Certification and Field

  8. Rapid Coarsening of Ion Beam Ripple Patterns by Defect Annihilation

    SciTech Connect (OSTI)

    Hansen, Henri; Messlinger, Sebastian; Stoian, Georgiana [I. Physikalisches Institut, RWTH Aachen, 52056 Aachen (Germany); Redinger, Alex [I. Physikalisches Institut, RWTH Aachen, 52056 Aachen (Germany); II. Physikalisches Institut, Universitaet zu Koeln, 50937 Koeln, Zuelpicher Strasse 77 (Germany); Krug, Joachim [Institut fuer Theoretische Physik, Universitaet zu Koeln, 50937 Koeln, Zuelpicher Strasse 77 (Germany); Michely, Thomas [II. Physikalisches Institut, Universitaet zu Koeln, 50937 Koeln, Zuelpicher Strasse 77 (Germany)

    2009-04-10

    Ripple patterns formed on Pt(111) through grazing incidence ion beam erosion coarsen rapidly. At and below 450 K coarsening of the patterns is athermal and kinetic, unrelated to diffusion and surface free energy. Similar to the situation for sand dunes, coarsening takes place through annihilation reactions of mobile defects in the pattern. The defect velocity derived on the basis of a simple model agrees quantitatively with the velocity of monatomic steps illuminated by the ion beam.

  9. Crystal defect studies using x-ray diffuse scattering

    SciTech Connect (OSTI)

    Larson, B.C.

    1980-01-01

    Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute precipitates are characterized by local electronic density changes at the defect sites and by distortions of the lattice structure surrounding the defects. The effect of these interruptions of the crystal lattice on the scattering of x-rays is considered in this paper, and examples are presented of the use of the diffuse scattering to study the defects. X-ray studies of self-interstitials in electron irradiated aluminum and copper are discussed in terms of the identification of the interstitial configuration. Methods for detecting the onset of point defect aggregation into dislocation loops are considered and new techniques for the determination of separate size distributions for vacancy loops and interstitial loops are presented. Direct comparisons of dislocation loop measurements by x-rays with existing electron microscopy studies of dislocation loops indicate agreement for larger size loops, but x-ray measurements report higher concentrations in the smaller loop range. Methods for distinguishing between loops and three-dimensional precipitates are discussed and possibilities for detailed studies considered. A comparison of dislocation loop size distributions obtained from integral diffuse scattering measurements with those from TEM show a discrepancy in the smaller sizes similar to that described above.

  10. Defect reaction network in Si-doped InP : numerical predictions.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2013-10-01

    This Report characterizes the defects in the defect reaction network in silicon-doped, n-type InP deduced from first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si-doped InP until culminating in immobile reaction products. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon-related defects in the reaction network. This Report serves to extend the results for intrinsic defects in SAND 2012-3313: %E2%80%9CSimple intrinsic defects in InP: Numerical predictions%E2%80%9D to include Si-containing simple defects likely to be present in a radiation-induced defect reaction sequence.

  11. Systems and methods for forming defects on graphitic materials and curing radiation-damaged graphitic materials

    DOE Patents [OSTI]

    Ryu, Sunmin; Brus, Louis E.; Steigerwald, Michael L.; Liu, Haitao

    2012-09-25

    Systems and methods are disclosed herein for forming defects on graphitic materials. The methods for forming defects include applying a radiation reactive material on a graphitic material, irradiating the applied radiation reactive material to produce a reactive species, and permitting the reactive species to react with the graphitic material to form defects. Additionally, disclosed are methods for removing defects on graphitic materials.

  12. Voltage shifts and defect-dipoles in ferroelectric capacitors

    SciTech Connect (OSTI)

    Warren, W.L.; Pike, G.E.; Dimos, D.

    1996-12-01

    We review the processes and mechanisms by which voltage offsets occur in the hysteresis loop of ferroelectric materials. Simply stated, voltage shifts arise from near-interfacial charge trapping in the ferroelectric. We show that the impetus behind voltage shifts in ferroelectric capacitors is the net polarization, with the net polarization being determined by the perovskite and the aligned defect-dipole components. Some common defect-dipoles in the PZT system are lead vacancy-oxygen vacancy complexes. One way to change the net polarization in the ferroelectric is to subject the PZT capacitor to a dc bias at elevated temperature; this process is spectroscopically shown to align defect-dipoles along the direction of the applied electric field. The alignment of defect-dipoles can strongly impact several material properties. One such impact is that it can lead to enhanced voltage shifts (imprint). It is proposed that the net polarization determines the spatial location of the asymmetrically trapped charge that are the cause for the voltage shifts. An enhanced polarization at one electrode interface can lead to larger voltage shifts since it lowers the electrostatic potential well for electron trapping, i.e., more electron trapping can occur. Defect-dipole alignment is also shown to increase the UV sensitivity of the ferroelectric.

  13. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  14. Developmental defects in zebrafish for classification of EGF pathway inhibitors

    SciTech Connect (OSTI)

    Pruvot, Benoist; Cur, Yoann; Djiotsa, Joachim; Voncken, Audrey; Muller, Marc

    2014-01-15

    One of the major challenges when testing drug candidates targeted at a specific pathway in whole animals is the discrimination between specific effects and unwanted, off-target effects. Here we used the zebrafish to define several developmental defects caused by impairment of Egf signaling, a major pathway of interest in tumor biology. We inactivated Egf signaling by genetically blocking Egf expression or using specific inhibitors of the Egf receptor function. We show that the combined occurrence of defects in cartilage formation, disturbance of blood flow in the trunk and a decrease of myelin basic protein expression represent good indicators for impairment of Egf signaling. Finally, we present a classification of known tyrosine kinase inhibitors according to their specificity for the Egf pathway. In conclusion, we show that developmental indicators can help to discriminate between specific effects on the target pathway from off-target effects in molecularly targeted drug screening experiments in whole animal systems. - Highlights: We analyze the functions of Egf signaling on zebrafish development. Genetic blocking of Egf expression causes cartilage, myelin and circulatory defects. Chemical inhibition of Egf receptor function causes similar defects. Developmental defects can reveal the specificity of Egf pathway inhibitors.

  15. Predicting the Occurrence of Cosmetic Defects in Automotive Skin Panels

    SciTech Connect (OSTI)

    Hazra, S.; Williams, D.; Roy, R.; Aylmore, R.; Allen, M.; Hollingdale, D.

    2011-05-04

    The appearance of defects such as 'hollows' and 'shock lines' can affect the perceived quality and attractiveness of automotive skin panels. These defects are the result of the stamping process and appear as small, localized deviations from the intended styling of the panels. Despite their size, they become visually apparent after the application of paint and the perceived quality of a panel may become unacceptable. Considerable time is then dedicated to minimizing their occurrence through tool modifications. This paper will investigate the use of the wavelet transform as a tool to analyze physically measured panels. The transform has two key aspects. The first is its ability to distinguish small scale local defects from large scale styling curvature. The second is its ability to characterize the shape of a defect in terms of its wavelength and a 'correlation value'. The two features of the transform enable it to be used as a tool for locating and predicting the severity of defects. The paper will describe the transform and illustrate its application on test cases.

  16. Limitation of the Open-Circuit Voltage Due to Metastable Intrinsic Defects in Cu(In,Ga)Se2 and Strategies to Avoid These Defects: Preprint

    SciTech Connect (OSTI)

    Lany, S.; Zunger, A.

    2008-05-01

    This paper summarizes using first-principles defect theory to investigate the role of intrinsic point defects in the limitation of the open-circuit voltage (VOC) in Cu(In,Ga)Se2 solar cells.

  17. Defect reaction network in Si-doped InAs. Numerical predictions.

    SciTech Connect (OSTI)

    Schultz, Peter A.

    2015-05-01

    This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulk InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank

  18. Charge state defect engineering of silicon during ion implantation

    SciTech Connect (OSTI)

    Brown, R.A.; Ravi, J.; Erokhin, Y.; Rozgonyi, G.A.; White, C.W.

    1997-01-01

    Effects of in situ interventions which alter defect interactions during implantation, and thereby affect the final damage state, have been investigated. Specifically, we examined effects of internal electric fields and charge carrier injection on damage accumulation in Si. First, we implanted H or He ions into diode structures which were either reverse or forward biased during implantation. Second, we implanted B or Si ions into plain Si wafers while illuminating them with UV light. In each case, the overall effect is one of damage reduction. Both the electric field and charge carrier injection effects may be understood as resulting from changes in defect interactions caused in part by changes to the charge state of defects formed during implantation.

  19. UNIVERSALITY OF PHASE TRANSITION DYNAMICS: TOPOLOGICAL DEFECTS FROM SYMMETRY BREAKING

    SciTech Connect (OSTI)

    Zurek, Wojciech H.; Del Campo, Adolfo

    2014-02-13

    In the course of a non-equilibrium continuous phase transition, the dynamics ceases to be adiabatic in the vicinity of the critical point as a result of the critical slowing down (the divergence of the relaxation time in the neighborhood of the critical point). This enforces a local choice of the broken symmetry and can lead to the formation of topological defects. The Kibble-Zurek mechanism (KZM) was developed to describe the associated nonequilibrium dynamics and to estimate the density of defects as a function of the quench rate through the transition. During recent years, several new experiments investigating formation of defects in phase transitions induced by a quench both in classical and quantum mechanical systems were carried out. At the same time, some established results were called into question. We review and analyze the Kibble-Zurek mechanism focusing in particular on this surge of activity, and suggest possible directions for further progress.

  20. Nanofiltration across Defect-Sealed Nanoporous Monolayer Graphene

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    O'Hern, Sean C.; Jang, Doojoon; Bose, Suman; Idrobo Tapia, Juan Carlos; Song, Yi; Laoui, Tahar; Kong, Jing; Karnik, Rohit

    2015-04-27

    Monolayer nanoporous graphene represents an ideal membrane for molecular separations, but its practical realization is impeded by leakage through defects in the ultrathin graphene. Here, we report a multiscale leakage-sealing process that exploits the nonpolar nature and impermeability of pristine graphene to selectively block defects, resulting in a centimeter-scale membrane that can separate two fluid reservoirs by an atomically thin layer of graphene. After introducing subnanometer pores in graphene, the membrane exhibited rejection of multivalent ions and small molecules and water flux consistent with prior molecular dynamics simulations. The results indicate the feasibility of constructing defect-tolerant monolayer graphene membranes formore » nanofiltration, desalination, and other separation processes.« less

  1. Apparatus and method for defect testing of integrated circuits

    DOE Patents [OSTI]

    Cole, Jr., Edward I.; Soden, Jerry M.

    2000-01-01

    An apparatus and method for defect and failure-mechanism testing of integrated circuits (ICs) is disclosed. The apparatus provides an operating voltage, V.sub.DD, to an IC under test and measures a transient voltage component, V.sub.DDT, signal that is produced in response to switching transients that occur as test vectors are provided as inputs to the IC. The amplitude or time delay of the V.sub.DDT signal can be used to distinguish between defective and defect-free (i.e. known good) ICs. The V.sub.DDT signal is measured with a transient digitizer, a digital oscilloscope, or with an IC tester that is also used to input the test vectors to the IC. The present invention has applications for IC process development, for the testing of ICs during manufacture, and for qualifying ICs for reliability.

  2. Ultrasonic imaging system for in-process fabric defect detection

    DOE Patents [OSTI]

    Sheen, Shuh-Haw; Chien, Hual-Te; Lawrence, William P.; Raptis, Apostolos C.

    1997-01-01

    An ultrasonic method and system are provided for monitoring a fabric to identify a defect. A plurality of ultrasonic transmitters generate ultrasonic waves relative to the fabric. An ultrasonic receiver means responsive to the generated ultrasonic waves from the transmitters receives ultrasonic waves coupled through the fabric and generates a signal. An integrated peak value of the generated signal is applied to a digital signal processor and is digitized. The digitized signal is processed to identify a defect in the fabric. The digitized signal processing includes a median value filtering step to filter out high frequency noise. Then a mean value and standard deviation of the median value filtered signal is calculated. The calculated mean value and standard deviation are compared with predetermined threshold values to identify a defect in the fabric.

  3. Final report. Defects and transport in mixed oxides

    SciTech Connect (OSTI)

    Dieckmann, R {umlt u}diger

    2001-12-13

    New results on the point defect chemistry of (Ni{sub x}Fe{sub 1-x}){sub 3-delta}O{sub 4} and on the cation tracer diffusion in this spinel solid solution are presented and discussed. The equation system for the defect chemistry of perovskites of the type A{sub 1-x}B{sub 1+x}O{sub 3-delta} have been worked out and used to derive Kr{umlt o}ger-Vink diagrams. The deviation from stoichiometry, delta, in LA{sub 1-x}Mn{sub 1+x}O{sub 3-delta} has been measured at 1100, 1200, and 1300 degrees Celsius as a function of the oxygen activity and the composition variable x. At high and low oxygen activities, the data were fit by taking into account the electrostatic interaction between the charge defects by making use of the Debye H{umlt u}ckel theory.

  4. Defectiveness of the crystal structure of electroerosion powders

    SciTech Connect (OSTI)

    Fominskii, L.P.; Myuller, A.S.; Levchuk, M.V.

    1988-03-01

    The fine structure and defectiveness of metal powder crystal lattices produced by electroerosion dispersion were examined. Dispersion was performed on granulated aluminum, Armco iron, carbon steels, and tungsten. The fine structure was examined by x-ray diffraction. Harmonic analysis was performed using a computer and a program which calculates not only the expansion coefficients of the functions into a Fourier series but also the microdistortions and the dimensions of the mosaic blocks. Electroerosion powders were found to have higher density of crystal lattice defects which can increase their chemical and catalytic activity, improve the metallic electroerosion powder passivation, and increase their corrosion resistance.

  5. Multi-level scanning method for defect inspection

    DOE Patents [OSTI]

    Bokor, Jeffrey; Jeong, Seongtae

    2002-01-01

    A method for performing scanned defect inspection of a collection of contiguous areas using a specified false-alarm-rate and capture-rate within an inspection system that has characteristic seek times between inspection locations. The multi-stage method involves setting an increased false-alarm-rate for a first stage of scanning, wherein subsequent stages of scanning inspect only the detected areas of probable defects at lowered values for the false-alarm-rate. For scanning inspection operations wherein the seek time and area uncertainty is favorable, the method can substantially increase inspection throughput.

  6. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    SciTech Connect (OSTI)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-07-07

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6 through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  7. Quantitative phase retrieval with arbitrary pupil and illumination

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claus, Rene A.; Naulleau, Patrick P.; Neureuther, Andrew R.; Waller, Laura

    2015-10-02

    We present a general algorithm for combining measurements taken under various illumination and imaging conditions to quantitatively extract the amplitude and phase of an object wave. The algorithm uses the weak object transfer function, which incorporates arbitrary pupil functions and partially coherent illumination. The approach is extended beyond the weak object regime using an iterative algorithm. Finally, we demonstrate the method on measurements of Extreme Ultraviolet Lithography (EUV) multilayer mask defects taken in an EUV zone plate microscope with both a standard zone plate lens and a zone plate implementing Zernike phase contrast.

  8. Dragging two-dimensional discrete solitons by moving linear defects

    SciTech Connect (OSTI)

    Brazhnyi, Valeriy A.; Malomed, Boris A.

    2011-07-15

    We study the mobility of small-amplitude solitons attached to moving defects which drag the solitons across a two-dimensional (2D) discrete nonlinear Schroedinger lattice. Findings are compared to the situation when a free small-amplitude 2D discrete soliton is kicked in a uniform lattice. In agreement with previously known results, after a period of transient motion the free soliton transforms into a localized mode pinned by the Peierls-Nabarro potential, irrespective of the initial velocity. However, the soliton attached to the moving defect can be dragged over an indefinitely long distance (including routes with abrupt turns and circular trajectories) virtually without losses, provided that the dragging velocity is smaller than a certain critical value. Collisions between solitons dragged by two defects in opposite directions are studied too. If the velocity is small enough, the collision leads to a spontaneous symmetry breaking, featuring fusion of two solitons into a single one, which remains attached to either of the two defects.

  9. Graphene defect formation by extreme ultraviolet generated photoelectrons

    SciTech Connect (OSTI)

    Gao, A. Lee, C. J.; Bijkerk, F.

    2014-08-07

    We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80?eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transformation from microcrystalline to nanocrystalline and then further to amorphous carbon. Further, irradiation of graphene with increased water partial pressure does not significantly change the Raman spectra, which suggests that, in the extremely low energy range, e-beam induced chemical reactions between residual water and graphene are not the dominant mechanism driving defect formation in graphene. Single layer graphene, partially suspended over holes was irradiated with EUV radiation. By comparing with the Raman results from e-beam irradiation, it is concluded that the photoelectrons, especially those from the valence band, contribute to defect formation in graphene during irradiation.

  10. Applying a tapered electrode on a porous ceramic support tube by masking a band inside the tube and drawing in electrode material from the outside of the tube by suction

    DOE Patents [OSTI]

    Vasilow, T.R.; Zymboly, G.E.

    1991-12-17

    An electrode is deposited on a support by providing a porous ceramic support tube having an open end and closed end; masking at least one circumferential interior band inside the tube; evacuating air from the tube by an evacuation system, to provide a permeability gradient between the masked part and unmasked part of the tube; applying a liquid dispersion of solid electrode particles to the outside surface of the support tube, where liquid flows through the wall, forming a uniform coating over the unmasked support part and a tapered coating over the masked part. 2 figures.

  11. Applying a tapered electrode on a porous ceramic support tube by masking a band inside the tube and drawing in electrode material from the outside of the tube by suction

    DOE Patents [OSTI]

    Vasilow, Theodore R.; Zymboly, Gregory E.

    1991-01-01

    An electrode is deposited on a support by providing a porous ceramic support tube (10) having an open end (14) and closed end (16); masking at least one circumferential interior band (18 and 18') inside the tube; evacuating air from the tube by an evacuation system (30), to provide a permeability gradient between the masked part (18 and 18') and unmasked part (20) of the tube; applying a liquid dispersion of solid electrode particles to the outside surface of the support tube, where liquid flows through the wall, forming a uniform coating (42) over the unmasked support part (20) and a tapered coating over the masked part (18 and 18').

  12. Low-energy planar magnetic defects in BaFe2As2: Nanotwins, twins...

    Office of Scientific and Technical Information (OSTI)

    These nanoscale defects have a very low surface energy (22-210 m Jm-2), with twins favorable to the mesoscale. Defects exhibit smaller moments confined near their boundaries-making ...

  13. ENERGY OF THE DEFECTS INDUCED BY NEUTRON IRRADIATION IN MgO....

    Office of Scientific and Technical Information (OSTI)

    ENERGY OF THE DEFECTS INDUCED BY NEUTRON IRRADIATION IN MgO. Citation Details In-Document Search Title: ENERGY OF THE DEFECTS INDUCED BY NEUTRON IRRADIATION IN MgO. (in French) ...

  14. Defect-induced discriminative modulation of the highest occupied molecular orbital energies of graphene

    SciTech Connect (OSTI)

    Yuan, Wenjuan E-mail: luojunkink@126.com; Yang, Hongping; Zhu, Jing; Luo, Jun E-mail: luojunkink@126.com

    2015-11-15

    Defects are capable of modulating various properties of graphene, and thus controlling defects is useful in the development of graphene-based devices. Here we present first-principles calculations, which reveal a new avenue for defect engineering of graphene: the modulation by defects on the highest occupied molecular orbital (HOMO) energy of a charged monolayer graphene quantum dot (GQD) is discriminative. When the charge of a GQD increases its HOMO energy also increases. Importantly, when the GQD contains one particular class of defects its HOMO energy is sometimes higher and sometimes lower than that of the corresponding GQD without any defects, but when the GQD contains another class of defects its HOMO energy is always higher or lower than that of the corresponding intact GQD as its excess charge reaches a critical value. This discriminative modulation could allow defect engineering to control secondary electron ejection in graphene, leading to a new way to develop graphene-based devices.

  15. Electron-limiting defect complex in hyperdoped GaAs: The D D...

    Office of Scientific and Technical Information (OSTI)

    Electron-limiting defect complex in hyperdoped GaAs: The D D X center Prev Next Title: Electron-limiting defect complex in hyperdoped GaAs: The D D X center Authors: Ma, Jie ...

  16. Doping-assisted defect control in compound semiconductors

    DOE Patents [OSTI]

    Specht, Petra; Weber, Eicke R.; Weatherford, Todd Russell

    2006-07-11

    The present invention relates to the production of thin film epilayers of IIIV and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other IIIV materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.

  17. Extreme ultraviolet induced defects on few-layer graphene

    SciTech Connect (OSTI)

    Gao, A.; Zoethout, E.; Lee, C. J.; Rizo, P. J.; Scaccabarozzi, L.; Banine, V.; Bijkerk, F.; MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede

    2013-07-28

    We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H{sub 2} background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp{sup 2} bonded carbon fraction decreases while the sp{sup 3} bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

  18. Doping-assisted defect control in compound semiconductors

    DOE Patents [OSTI]

    Specht, Petra; Weber, Eicke R.; Weatherford, Todd Russell

    2006-07-11

    The present invention relates to the production of thin film epilayers of III–V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III–V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.

  19. Defect density and dielectric constant in perovskite solar cells

    SciTech Connect (OSTI)

    Samiee, Mehran; Konduri, Siva; Abbas, Hisham A.; Joshi, Pranav; Zhang, Liang; Dalal, Vikram; Ganapathy, Balaji; Kottokkaran, Ranjith; Noack, Max; Kitahara, Andrew

    2014-10-13

    We report on measurement of dielectric constant, mid-gap defect density, Urbach energy of tail states in CH{sub 3}NH{sub 3}PbI{sub x}Cl{sub 1?x} perovskite solar cells. Midgap defect densities were estimated by measuring capacitance vs. frequency at different temperatures and show two peaks, one at 0.66?eV below the conduction band and one at 0.24?eV below the conduction band. The attempt to escape frequency is in the range of 2??10{sup 11}/s. Quantum efficiency data indicate a bandgap of 1.58?eV. Urbach energies of valence and conduction band are estimated to be ?16 and ?18?meV. Measurement of saturation capacitance indicates that the relative dielectric constant is ?18.

  20. Native defects in MBE-grown CdTe

    SciTech Connect (OSTI)

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

    2013-12-04

    Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

  1. Nanotube-based gas sensors - role of structural defects

    SciTech Connect (OSTI)

    Andzelm, J; Govind, N; Maiti, A

    2005-05-05

    Existing theoretical literature suggests that defect-free, pristine carbon nanotubes (CNTs) interact weakly with many gas molecules like H{sub 2}O, CO, NH{sub 3}, H{sub 2}, and so on. The case of NH{sub 3} is particularly intriguing because this is in disagreement with experimentally observed changes in electrical conductance of CNTs upon exposure to these gases. In order to explain such discrepancy, we have carried out Density Functional Theory (DFT) investigations of the role of common atomistic defects in CNT (Stone-Wales, monovacancy, and interstitial) on the chemisorption of NH{sub 3}. Computed binding energies, charge transfer, dissociation barriers, and vibrational modes are compared with existing experimental results on electrical conductance, thermal desorption and infrared spectroscopy.

  2. Accessing defect dynamics using intense, nanosecond pulsed ion beams

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Persaud, A.; Barnard, J. J.; Guo, H.; Hosemann, P.; Lidia, S.; Minor, A. M.; Seidl, P. A.; Schenkel, T.

    2015-06-18

    Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystalmore » Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.« less

  3. Accessing defect dynamics using intense, nanosecond pulsed ion beams

    SciTech Connect (OSTI)

    Persaud, A.; Barnard, J. J.; Guo, H.; Hosemann, P.; Lidia, S.; Minor, A. M.; Seidl, P. A.; Schenkel, T.

    2015-06-18

    Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystal Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.

  4. Operating Experience Level 3: Radcalc V4.1 Software Defect | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Level 3: Radcalc V4.1 Software Defect Operating Experience Level 3: Radcalc V4.1 Software Defect September 6, 2011 OE-3 2011-01: Radcalc V4.1 Software Defect OE-3 2011-01: Radcalc V4.1 Software Defect (117.61 KB) More Documents & Publications RADCALC DOE-HDBK-1129-2007 DOE-STD-3013-2012

  5. Scientists optimize defects for better superconducting effects | Argonne

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    National Laboratory optimize defects for better superconducting effects By Jared Sagoff * July 12, 2016 Tweet EmailPrint High-temperature superconducting materials hold enormous promise for a variety of different applications because of their ability to transmit a current without any dissipation at relatively high temperatures - up to around 90 Kelvin (about -300° F), which permits cooling with liquid nitrogen. However, this special ability decreases rapidly in the presence of a magnetic

  6. Scientists optimize defects for better superconducting effects | Argonne

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Leadership Computing Facility Scientists optimize defects for better superconducting effects Author: Jared Sagoff July 12, 2016 Facebook Twitter LinkedIn Google E-mail Printer-friendly version High-temperature superconducting materials hold enormous promise for a variety of different applications because of their ability to transmit a current without any dissipation at relatively high temperatures - up to around 90 Kelvin (about -300° F), which permits cooling with liquid nitrogen. However,

  7. Defect Migration and Recombination in Nanoindentation of Silica Glass |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Argonne Leadership Computing Facility Defect Migration and Recombination in Nanoindentation of Silica Glass Authors: Nomura, K., Chen, Y., Kalia, R.K., Nakano, A., Vashishta, P. Deformation, plasticity, and flow in silica-based glasses have been studied for decades, and yet important questions remain about the atomistic mechanisms underlying these processes. Our molecular dynamics simulations of nanoindentation indicate that these mechanical processes have a unified underlying atomistic

  8. CASTING DEFECT MODELING IN AN INTEGRATED COMPUTATIONAL MATERIALS ENGINEERING APPROACH

    SciTech Connect (OSTI)

    Sabau, Adrian S

    2015-01-01

    To accelerate the introduction of new cast alloys, the simultaneous modeling and simulation of multiphysical phenomena needs to be considered in the design and optimization of mechanical properties of cast components. The required models related to casting defects, such as microporosity and hot tears, are reviewed. Three aluminum alloys are considered A356, 356 and 319. The data on calculated solidification shrinkage is presented and its effects on microporosity levels discussed. Examples are given for predicting microporosity defects and microstructure distribution for a plate casting. Models to predict fatigue life and yield stress are briefly highlighted here for the sake of completion and to illustrate how the length scales of the microstructure features as well as porosity defects are taken into account for modeling the mechanical properties. Thus, the data on casting defects, including microstructure features, is crucial for evaluating the final performance-related properties of the component. ACKNOWLEDGEMENTS This work was performed under a Cooperative Research and Development Agreement (CRADA) with the Nemak Inc., and Chrysler Co. for the project "High Performance Cast Aluminum Alloys for Next Generation Passenger Vehicle Engines. The author would also like to thank Amit Shyam for reviewing the paper and Andres Rodriguez of Nemak Inc. Research sponsored by the U. S. Department of Energy, Office of Energy Efficiency and Renewable Energy, Vehicle Technologies Office, as part of the Propulsion Materials Program under contract DE-AC05-00OR22725 with UT-Battelle, LLC. Part of this research was conducted through the Oak Ridge National Laboratory's High Temperature Materials Laboratory User Program, which is sponsored by the U. S. Department of Energy, Office of Energy Efficiency and Renewable Energy, Vehicle Technologies Program.

  9. Point Defects in Binary Laves-Phase Alloys

    SciTech Connect (OSTI)

    Liaw, P.K.; Liu, C.T.; Pike, L.M.; Zhu, J.H.

    1998-11-30

    Point defect mechanisms in the binary C15 NbCr{sub 2} and NbCo{sub 2}, and C14 NbFe{sub 2} systems on both sides of stoichiometry was studied and clarified by both bulk density and X-ray lattice parameter measurements. It was found that the vacancy concentrations in these systems after quenching from 1000 C are essentially zero. The constitutional defects on both sides of stoichiometry for these systems were found to be of the anti-site type in comparison with the model predictions. However, thermal vacancies exhibiting a maximum at the stoichiometric composition were obtained in NbCr{sub 2} laves phase alloys after quenching from 1400 C. These could be completely eliminated by annealing at 1000 C. Anti-site hardening was found on both sides of stoichiometry for all three Laves phase systems studied. Furthermore, the thermal vacancies in NbCr{sub 2} alloys after quenching from 1400 C were found to soften the Laves phase. The anti-site hardening of the Laves phases is similar to that of the B2 compounds, while the thermal vacancy softening is unique to the Laves phase. Both the anti-site defects and thermal vacancies do not significantly affect the fracture toughness of the Laves phases.

  10. RHIC prefire protection masks

    SciTech Connect (OSTI)

    Drees, A.; Biscardi, C.; Curcio, T.; Gassner, D.; DeSanto, L.; Fu, W.; Liaw, C. J.; Montag, C.; Thieberger, P.; Yip, K.

    2015-01-07

    The protection of the RHIC experimental detectors from damage due to beam hitting close upstream elements in cases of abort kicker prefires requires some dedicated precautionary measures with two general options: to bring the beam close to a limiting aperture (i.e. the beam pipe wall), as far upstream of the detector components as possible or, alternatively, to bring a limiting aperture close to the circulating beam. Spontaneous and random prefires of abort kicker modules (Pulse Forming Network, PFN) have a history as long as RHIC is being operated. The abort system consist of 5 kickers in per ring, each of them equipped with its own dedicated PFN.

  11. Self-regulation of charged defect compensation and formation energy pinning in semiconductors

    SciTech Connect (OSTI)

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Wei, Su -Huai

    2015-11-20

    Current theoretical analyses of defect properties without solving the detailed balance equations often estimate Fermi-level pinning position by omitting free carriers and assume defect concentrations can be always tuned by atomic chemical potentials. This could be misleading in some circumstance. Here we clarify that: (1) Because the Fermi-level pinning is determined not only by defect states but also by free carriers from band-edge states, band-edge states should be treated explicitly in the same footing as the defect states in practice; (2) defect formation energy, thus defect density, could be pinned and independent on atomic chemical potentials due to the entanglement of atomic chemical potentials and Fermi energy, in contrast to the usual expectation that defect formation energy can always be tuned by varying the atomic chemical potentials; and (3) the charged defect compensation behavior, i.e., most of donors are compensated by acceptors or vice versa, is self-regulated when defect formation energies are pinned. The last two phenomena are more dominant in wide-gap semiconductors or when the defect formation energies are small. Using NaCl and CH3NH3PbI3 as examples, we illustrate these unexpected behaviors. Furthermore, our analysis thus provides new insights that enrich the understanding of the defect physics in semiconductors and insulators.

  12. Self-regulation of charged defect compensation and formation energy pinning in semiconductors

    SciTech Connect (OSTI)

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Wei, Su -Huai

    2015-11-20

    Current theoretical analyses of defect properties without solving the detailed balance equations often estimate Fermi-level pinning position by omitting free carriers and assume defect concentrations can be always tuned by atomic chemical potentials. This could be misleading in some circumstance. Here we clarify that: (1) Because the Fermi-level pinning is determined not only by defect states but also by free carriers from band-edge states, band-edge states should be treated explicitly in the same footing as the defect states in practice; (2) defect formation energy, thus defect density, could be pinned and independent on atomic chemical potentials due to the entanglement of atomic chemical potentials and Fermi energy, in contrast to the usual expectation that defect formation energy can always be tuned by varying the atomic chemical potentials; and (3) the charged defect compensation behavior, i.e., most of donors are compensated by acceptors or vice versa, is self-regulated when defect formation energies are pinned. The last two phenomena are more dominant in wide-gap semiconductors or when the defect formation energies are small. Using NaCl and CH3NH3PbI3 as examples, we illustrate these unexpected behaviors. Our analysis thus provides new insights that enrich the understanding of the defect physics in semiconductors and insulators.

  13. Self-regulation of charged defect compensation and formation energy pinning in semiconductors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Wei, Su -Huai

    2015-11-20

    Current theoretical analyses of defect properties without solving the detailed balance equations often estimate Fermi-level pinning position by omitting free carriers and assume defect concentrations can be always tuned by atomic chemical potentials. This could be misleading in some circumstance. Here we clarify that: (1) Because the Fermi-level pinning is determined not only by defect states but also by free carriers from band-edge states, band-edge states should be treated explicitly in the same footing as the defect states in practice; (2) defect formation energy, thus defect density, could be pinned and independent on atomic chemical potentials due to the entanglementmore » of atomic chemical potentials and Fermi energy, in contrast to the usual expectation that defect formation energy can always be tuned by varying the atomic chemical potentials; and (3) the charged defect compensation behavior, i.e., most of donors are compensated by acceptors or vice versa, is self-regulated when defect formation energies are pinned. The last two phenomena are more dominant in wide-gap semiconductors or when the defect formation energies are small. Using NaCl and CH3NH3PbI3 as examples, we illustrate these unexpected behaviors. Our analysis thus provides new insights that enrich the understanding of the defect physics in semiconductors and insulators.« less

  14. Self-regulation of charged defect compensation and formation energy pinning in semiconductors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Wei, Su -Huai

    2015-11-20

    Current theoretical analyses of defect properties without solving the detailed balance equations often estimate Fermi-level pinning position by omitting free carriers and assume defect concentrations can be always tuned by atomic chemical potentials. This could be misleading in some circumstance. Here we clarify that: (1) Because the Fermi-level pinning is determined not only by defect states but also by free carriers from band-edge states, band-edge states should be treated explicitly in the same footing as the defect states in practice; (2) defect formation energy, thus defect density, could be pinned and independent on atomic chemical potentials due to the entanglementmoreof atomic chemical potentials and Fermi energy, in contrast to the usual expectation that defect formation energy can always be tuned by varying the atomic chemical potentials; and (3) the charged defect compensation behavior, i.e., most of donors are compensated by acceptors or vice versa, is self-regulated when defect formation energies are pinned. The last two phenomena are more dominant in wide-gap semiconductors or when the defect formation energies are small. Using NaCl and CH3NH3PbI3 as examples, we illustrate these unexpected behaviors. Furthermore, our analysis thus provides new insights that enrich the understanding of the defect physics in semiconductors and insulators.less

  15. Blade reliability collaborative : collection of defect, damage and repair data.

    SciTech Connect (OSTI)

    Ashwill, Thomas D.; Ogilvie, Alistair B.; Paquette, Joshua A.

    2013-04-01

    The Blade Reliability Collaborative (BRC) was started by the Wind Energy Technologies Department of Sandia National Laboratories and DOE in 2010 with the goal of gaining insight into planned and unplanned O&M issues associated with wind turbine blades. A significant part of BRC is the Blade Defect, Damage and Repair Survey task, which will gather data from blade manufacturers, service companies, operators and prior studies to determine details about the largest sources of blade unreliability. This report summarizes the initial findings from this work.

  16. Highly defective oxides as sinter resistant thermal barrier coating

    DOE Patents [OSTI]

    Subramanian, Ramesh

    2005-08-16

    A thermal barrier coating material formed of a highly defective cubic matrix structure having a concentration of a stabilizer sufficiently high that the oxygen vacancies created by the stabilizer interact within the matrix to form multi-vacancies, thereby improving the sintering resistance of the material. The concentration of stabilizer within the cubic matrix structure is greater than that concentration of stabilizer necessary to give the matrix a peak ionic conductivity value. The concentration of stabilizer may be at least 30 wt. %. Embodiments include a cubic matrix of zirconia stabilized by at least 30-50 wt. % yttria, and a cubic matrix of hafnia stabilized by at least 30-50 wt. % gadolinia.

  17. Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates

    SciTech Connect (OSTI)

    Akabori, M.; Yamada, S.

    2013-12-04

    We prepared InAs nanowires (NWs) by lateral growth on GaAs (110) masked substrates in molecular beam epitaxy. We measured magneto-transport properties of the InAs NWs. In spite of parallel-NW multi-channels, we observed fluctuating magneto-conductance. From the fluctuation, we evaluated phase coherence length as a function of measurement temperature, and found decrease in the length with increase in the temperature. We also evaluate phase coherence length as a function of gate voltage.

  18. Defect production during ion implantation of various A/sub III/B/sub V/ semiconductors

    SciTech Connect (OSTI)

    Wesch, W.; Wendler, E.; Goetz, G.; Kekelidse, N.P.

    1989-01-15

    The present paper gives a survey about the defect generation caused by ion implantation of GaAs, InAs, GaP, and InP. By combining Rutherford backscattering spectrometry, optical spectroscopy, and transmission electron microscopic methods, further information concerning the kinetics of the defect production as well as the type of defects created is obtained. Generally, the defect concentration in the region of implantation parameters investigated can be described by the energy density deposited into nuclear processes. Below critical values of the nuclear deposited energy density in GaAs weakly damaged layers containing point defects and point defect clusters are produced. With increasing nuclear deposited energy density an increasing number of amorphous zones is created due to manifold overlap of the initial defect clusters. The results indicate that in GaAs and InAs already at relatively low implantation temperatures, the amorphization occurs via homogeneous defect nucleation. The results obtained for GaP and InP, on the other hand, point at a remarkable contribution of heterogeneous defect nucleation already at room temperature, leading to amorphization at markedly lower nuclear deposited energy densities in spite of nearly identical values of the nuclear deposited energy. It is therefore concluded that defect recombination and annealing at room temperature is much less pronounced in the phosphides than in the arsenides.

  19. Defect Prevention and Detection in Software for Automated Test Equipment

    SciTech Connect (OSTI)

    E. Bean

    2006-11-30

    Software for automated test equipment can be tedious and monotonous making it just as error-prone as other software. Active defect prevention and detection are also important for test applications. Incomplete or unclear requirements, a cryptic syntax used for some test applicationsespecially script-based test sets, variability in syntax or structure, and changing requirements are among the problems encountered in one tester. Such problems are common to all software but can be particularly problematic in test equipment software intended to test another product. Each of these issues increases the probability of error injection during test application development. This report describes a test application development tool designed to address these issues and others for a particular piece of test equipment. By addressing these problems in the development environment, the tool has powerful built-in defect prevention and detection capabilities. Regular expressions are widely used in the development tool as a means of formally defining test equipment requirements for the test application and verifying conformance to those requirements. A novel means of using regular expressions to perform range checking was developed. A reduction in rework and increased productivity are the results. These capabilities are described along with lessons learned and their applicability to other test equipment software. The test application development tool, or application builder, is known as the PT3800 AM Creation, Revision and Archiving Tool (PACRAT).

  20. Gauge turbulence, topological defect dynamics, and condensation in Higgs models

    SciTech Connect (OSTI)

    Gasenzer, Thomas; McLerran, Larry; Pawlowski, Jan M.; Sexty, Dénes

    2014-07-28

    The real-time dynamics of topological defects and turbulent configurations of gauge fields for electric and magnetic confinement are studied numerically within a 2+1D Abelian Higgs model. It is shown that confinement is appearing in such systems equilibrating after a strong initial quench such as the overpopulation of the infrared modes. While the final equilibrium state does not support confinement, metastable vortex defect configurations appearing in the gauge field are found to be closely related to the appearance of physically observable confined electric and magnetic charges. These phenomena are seen to be intimately related to the approach of a non-thermal fixed point of the far-from-equilibrium dynamical evolution, signaled by universal scaling in the gauge-invariant correlation function of the Higgs field. Even when the parameters of the Higgs action do not support condensate formation in the vacuum, during this approach, transient Higgs condensation is observed. We discuss implications of these results for the far-from-equilibrium dynamics of Yang–Mills fields and potential mechanisms of how confinement and condensation in non-Abelian gauge fields can be understood in terms of the dynamics of Higgs models. These suggest that there is an interesting new class of dynamics of strong coherent turbulent gauge fields with condensates.

  1. Dark matter with topological defects in the Inert Doublet Model

    SciTech Connect (OSTI)

    Hindmarsh, Mark; Kirk, Russell; No, Jose Miguel; West, Stephen M.

    2015-05-26

    We examine the production of dark matter by decaying topological defects in the high mass region m{sub DM}≫m{sub W} of the Inert Doublet Model, extended with an extra U(1) gauge symmetry. The density of dark matter states (the neutral Higgs states of the inert doublet) is determined by the interplay of the freeze-out mechanism and the additional production of dark matter states from the decays of topological defects, in this case cosmic strings. These decays increase the predicted relic abundance compared to the standard freeze-out only case, and as a consequence the viable parameter space of the Inert Doublet Model can be widened substantially. In particular, for a given dark matter annihilation rate lower dark matter masses become viable. We investigate the allowed mass range taking into account constraints on the energy injection rate from the diffuse γ-ray background and Big Bang Nucleosynthesis, together with constraints on the dark matter properties coming from direct and indirect detection limits. For the Inert Doublet Model high-mass region, an inert Higgs mass as low as ∼200 GeV is permitted. There is also an upper limit on string mass per unit length, and hence the symmetry breaking scale, from the relic abundance in this scenario. Depending on assumptions made about the string decays, the limits are in the range 10{sup 12} GeV to 10{sup 13} GeV.

  2. Defect structure of ultrafine MgB{sub 2} nanoparticles

    SciTech Connect (OSTI)

    Bateni, Ali; Somer, Mehmet E-mail: msomer@ku.edu.tr; Repp, Sergej; Erdem, Emre E-mail: msomer@ku.edu.tr; Thomann, Ralf; Acar, Seluk

    2014-11-17

    Defect structure of MgB{sub 2} bulk and ultrafine particles, synthesized by solid state reaction route, have been investigated mainly by the aid of X-band electron paramagnetic resonance spectrometer. Two different amorphous Boron (B) precursors were used for the synthesis of MgB{sub 2}, namely, boron 95 (purity 95%97%, <1.5??m) and nanoboron (purity >98.5%, <250?nm), which revealed bulk and nanosized MgB{sub 2}, respectively. Scanning and transmission electron microscopy analysis demonstrate uniform and ultrafine morphology for nanosized MgB{sub 2} in comparison with bulk MgB{sub 2}. Powder X-ray diffraction data show that the concentration of the by-product MgO is significantly reduced when nanoboron is employed as precursor. It is observed that a significant average particle size reduction for MgB{sub 2} can be achieved only by using B particles of micron or nano size. The origin and the role of defect centers were also investigated and the results proved that at nanoscale MgB{sub 2} material contains Mg vacancies. Such vacancies influence the connectivity and the conductivity properties which are crucial for the superconductivity applications.

  3. Gauge turbulence, topological defect dynamics, and condensation in Higgs models

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gasenzer, Thomas; McLerran, Larry; Pawlowski, Jan M.; Sexty, Dénes

    2014-07-28

    The real-time dynamics of topological defects and turbulent configurations of gauge fields for electric and magnetic confinement are studied numerically within a 2+1D Abelian Higgs model. It is shown that confinement is appearing in such systems equilibrating after a strong initial quench such as the overpopulation of the infrared modes. While the final equilibrium state does not support confinement, metastable vortex defect configurations appearing in the gauge field are found to be closely related to the appearance of physically observable confined electric and magnetic charges. These phenomena are seen to be intimately related to the approach of a non-thermal fixedmore » point of the far-from-equilibrium dynamical evolution, signaled by universal scaling in the gauge-invariant correlation function of the Higgs field. Even when the parameters of the Higgs action do not support condensate formation in the vacuum, during this approach, transient Higgs condensation is observed. We discuss implications of these results for the far-from-equilibrium dynamics of Yang–Mills fields and potential mechanisms of how confinement and condensation in non-Abelian gauge fields can be understood in terms of the dynamics of Higgs models. These suggest that there is an interesting new class of dynamics of strong coherent turbulent gauge fields with condensates.« less

  4. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  5. 2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012

    SciTech Connect (OSTI)

    GLASER, EVAN

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  6. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    SciTech Connect (OSTI)

    Wampler, William R.; Myers, Samuel M.

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  7. PDET-A New Tool for Partial Defect Verification of Pressurized...

    Office of Scientific and Technical Information (OSTI)

    PDET-A New Tool for Partial Defect Verification of Pressurized Water Reactor Spent Fuel ... Visit OSTI to utilize additional information resources in energy science and technology. A ...

  8. PDET-A New Tool for Partial Defect Verification of Pressurized...

    Office of Scientific and Technical Information (OSTI)

    of Pressurized Water Reactor Spent Fuel Assemblies Citation Details In-Document Search Title: PDET-A New Tool for Partial Defect Verification of Pressurized Water Reactor Spent ...

  9. Effects of Point Defects and Impurities on Kinetics in NaAlH4 | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Point Defects and Impurities on Kinetics in NaAlH4 Effects of Point Defects and Impurities on Kinetics in NaAlH4 A presentation showing that point defects play an important role in the kinetics of NaAlH4 including vacancies and interstitials consistent with observed effects of Ti. effects_of_point_defects.pdf (503.7 KB) More Documents & Publications Catalytic Effect of Ti for Hydrogen Cycling in NaAlH4 FTA - SunLine Transit Agency - Final Report Proceedings of the 1998 U.S. DOE

  10. Theoretical investigations of defects in a Si-based digital ferromagne...

    Office of Scientific and Technical Information (OSTI)

    digital ferromagnetic heterostructure - a spintronic material Citation Details In-Document Search Title: Theoretical investigations of defects in a Si-based digital ...

  11. Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution...

    Office of Scientific and Technical Information (OSTI)

    Hydrogen Evolution Reaction This content will become publicly available on January 13, 2017 Prev Next Title: Defects Engineered Monolayer MoS2 for Improved Hydrogen ...

  12. Electronic and magnetic properties of zigzag silicene nanoribbons with Stone–Wales defects

    SciTech Connect (OSTI)

    Dong, Haixia; Fang, Dangqi; Gong, Baihua; Zhang, Yang; Zhang, Erhu; Zhang, Shengli

    2015-02-14

    The structural, electronic, and magnetic properties of zigzag silicene nanoribbons (ZSiNRs) with Stone–Wales (SW) defects were investigated using first-principles calculations. We found that two types of SW defects (named SW-Ι and SW-ΙΙ) exist in ZSiNRs. The SW defect was found to be the most stable at the edge of the ZSiNR, independently of the defect orientation, even more stable than it is in an infinite silicene sheet. In addition, the ZSiNRs can transition from semiconductor to metal or half-metal by modifying the SW defect location and concentration. For the same defect concentration, the band structures influenced by the SW-Ι defect are more distinct than those influenced by the SW-ΙΙ when the SW defect is at the edge. The present study suggests the possibility of tuning the electronic properties of ZSiNRs using the SW defects and might motivate their potential application in nanoelectronics and spintronics.

  13. Defect localization, characterization and reliability assessment in emerging photovoltaic devices.

    SciTech Connect (OSTI)

    Yang, Benjamin Bing-Yeh; Cruz-Campa, Jose Luis; Haase, Gad S.; Tangyunyong, Paiboon; Cole, Edward Isaac,; Okandan, Murat; Nielson, Gregory N.

    2014-04-01

    Microsystems-enabled photovoltaics (MEPV) can potentially meet increasing demands for light-weight, portable, photovoltaic solutions with high power density and efficiency. The study in this report examines failure analysis techniques to perform defect localization and evaluate MEPV modules. CMOS failure analysis techniques, including electroluminescence, light-induced voltage alteration, thermally-induced voltage alteration, optical beam induced current, and Seabeck effect imaging were successfully adapted to characterize MEPV modules. The relative advantages of each approach are reported. In addition, the effects of exposure to reverse bias and light stress are explored. MEPV was found to have good resistance to both kinds of stressors. The results form a basis for further development of failure analysis techniques for MEPVs of different materials systems or multijunction MEPVs. The incorporation of additional stress factors could be used to develop a reliability model to generate lifetime predictions for MEPVs as well as uncover opportunities for future design improvements.

  14. Ion beam collimating grid to reduce added defects

    DOE Patents [OSTI]

    Lindquist, Walter B. (Oakland, CA); Kearney, Patrick A. (Livermore, CA)

    2003-01-01

    A collimating grid for an ion source located after the exit grid. The collimating grid collimates the ion beamlets and disallows beam spread and limits the beam divergence during transients and steady state operation. The additional exit or collimating grid prevents beam divergence during turn-on and turn-off and prevents ions from hitting the periphery of the target where there is re-deposited material or from missing the target and hitting the wall of the vessel where there is deposited material, thereby preventing defects from being deposited on a substrate to be coated. Thus, the addition of a collimating grid to an ion source ensures that the ion beam will hit and be confined to a specific target area.

  15. Electrodes mitigating effects of defects in organic electronic devices

    DOE Patents [OSTI]

    Heller, Christian Maria Anton

    2008-05-06

    A compound electrode for organic electronic devices comprises a thin first layer of a first electrically conducting material and a second electrically conducting material disposed on the first layer. In one embodiment, the second electrically conducting material is formed into a plurality of elongated members. In another embodiment, the second material is formed into a second layer. The elongated members or the second layer has a thickness greater than that of the first layer. The second layer is separated from the first layer by a conducting material having conductivity less than at least the material of the first layer. The compound electrode is capable of mitigating adverse effects of defects, such as short circuits, in the construction of the organic electronic devices, and can be included in light-emitting or photovoltaic devices.

  16. Nonlinear effects in defect production by atomic and molecular ion implantation

    SciTech Connect (OSTI)

    David, C. Dholakia, Manan; Chandra, Sharat; Nair, K. G. M.; Panigrahi, B. K.; Amirthapandian, S.; Amarendra, G.; Varghese Anto, C.; Santhana Raman, P.; Kennedy, John

    2015-01-07

    This report deals with studies concerning vacancy related defects created in silicon due to implantation of 200 keV per atom aluminium and its molecular ions up to a plurality of 4. The depth profiles of vacancy defects in samples in their as implanted condition are carried out by Doppler broadening spectroscopy using low energy positron beams. In contrast to studies in the literature reporting a progressive increase in damage with plurality, implantation of aluminium atomic and molecular ions up to Al{sub 3}, resulted in production of similar concentration of vacancy defects. However, a drastic increase in vacancy defects is observed due to Al{sub 4} implantation. The observed behavioural trend with respect to plurality has even translated to the number of vacancies locked in vacancy clusters, as determined through gold labelling experiments. The impact of aluminium atomic and molecular ions simulated using MD showed a monotonic increase in production of vacancy defects for cluster sizes up to 4. The trend in damage production with plurality has been explained on the basis of a defect evolution scheme in which for medium defect concentrations, there is a saturation of the as-implanted damage and an increase for higher defect concentrations.

  17. Electrochemical method for defect delineation in silicon-on-insulator wafers

    DOE Patents [OSTI]

    Guilinger, Terry R.; Jones, Howland D. T.; Kelly, Michael J.; Medernach, John W.; Stevenson, Joel O.; Tsao, Sylvia S.

    1991-01-01

    An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

  18. Internal hydriding in irradiated defected Zircaloy fuel rods: A review (LWBR Development Program)

    SciTech Connect (OSTI)

    Clayton, J C

    1987-10-01

    Although not a problem in recent commercial power reactors, including the Shippingport Light Water Breeder Reactor, internal hydriding of Zircaloy cladding was a persistent cause of gross cladding failures during the 1960s. It occurred in the fuel rods of water-cooled nuclear power reactors that had a small cladding defect. This report summarizes the experimental findings, causes, mechanisms, and methods of minimizing internal hydriding in defected Zircaloy-clad fuel rods. Irradiation test data on the different types of defected fuel rods, intentionally fabricated defected and in-pile operationally defected rods, are compared. Significant factors affecting internal hydriding in defected Zircaloy-clad fuel rods (defect hole size, internal and external sources of hydrogen, Zircaloy cladding surface properties, nickel alloy contamination of Zircaloy, the effect of heat flux and fluence) are discussed. Pertinent in-pile and out-of-pile test results from Bettis and other laboratories are used as a data base in constructing a qualitative model which explains hydrogen generation and distribution in Zircaloy cladding of defected water-cooled reactor fuel rods. Techniques for minimizing internal hydride failures in Zircaloy-clad fuel rods are evaluated.

  19. Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams

    SciTech Connect (OSTI)

    Uedono, Akira; Yoshihara, Nakaaki; Mizushima, Yoriko; Kim, Youngsuk; Nakamura, Tomoji; Ohba, Takayuki; Oshima, Nagayasu; Suzuki, Ryoichi

    2014-10-07

    Vacancy-type defects introduced by the grinding of Czochralski-grown Si wafers were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons showed that vacancy-type defects were introduced in the surface region (<98 nm), and the major defect species were identified as (i) relatively small vacancies incorporated in dislocations and (ii) large vacancy clusters. Annealing experiments showed that the defect concentration decreased with increasing annealing temperature in the range between 100 and 500C. After 600700C annealing, the defect-rich region expanded up to about 170 nm, which was attributed to rearrangements of dislocation networks, and a resultant emission of point defects toward the inside of the sample. Above 800C, the stability limit of those vacancies was reached and they started to disappear. After the vacancies were annealed out (900C), oxygen-related defects were the major point defects and they were located at <25 nm.

  20. The relationship between grain boundary structure, defect mobility, and grain boundary sink efficiency

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Uberuaga, Blas Pedro; Vernon, Louis J.; Martinez, Enrique; Voter, Arthur F.

    2015-03-13

    Nanocrystalline materials have received great attention due to their potential for improved functionality and have been proposed for extreme environments where the interfaces are expected to promote radiation tolerance. However, the precise role of the interfaces in modifying defect behavior is unclear. Using long-time simulations methods, we determine the mobility of defects and defect clusters at grain boundaries in Cu. We find that mobilities vary significantly with boundary structure and cluster size, with larger clusters exhibiting reduced mobility, and that interface sink efficiency depends on the kinetics of defects within the interface via the in-boundary annihilation rate of defects. Thus,more » sink efficiency is a strong function of defect mobility, which depends on boundary structure, a property that evolves with time. Further, defect mobility at boundaries can be slower than in the bulk, which has general implications for the properties of polycrystalline materials. Finally, we correlate defect energetics with the volumes of atomic sites at the boundary.« less

  1. Defects, Entropy, and the Stabilization of Alternative Phase Boundary Orientations in Battery Electrode Particles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Heo, Tae Wook; Tang, Ming; Chen, Long-Qing; Wood, Brandon C.

    2016-01-04

    Using a novel statistical approach that efficiently explores the space of possible defect configurations, our present study investigates the chemomechanical coupling between interfacial structural defects and phase boundary alignments within phase-separating electrode particles. Applied to the battery cathode material LiXFePO4 as an example, the theoretical analysis reveals that small, defect-induced deviations from an ideal interface can lead to dramatic shifts in the orientations of phase boundaries between Li-rich and Li-lean phases, stabilizing otherwise unfavorable orientations. Significantly, this stabilization arises predominantly from configurational entropic factors associated with the presence of the interfacial defects rather than from absolute energetic considerations. The specificmore » entropic factors pertain to the diversity of defect configurations and their contributions to rotational/orientational rigidity of phase boundaries. Comparison of the predictions with experimental observations indicates that the additional entropy contributions indeed play a dominant role under actual cycling conditions, leading to the conclusion that interfacial defects must be considered when analyzing the stability and evolution kinetics of the internal phase microstructure of strongly phase-separating systems. Possible implications for tuning the kinetics of (de)lithiation based on selective defect incorporation are discussed. Ultimately, this understanding can be generalized to the chemomechanics of other defective solid phase boundaries.« less

  2. Growth, defect structure, and THz application of stoichiometric lithium niobate

    SciTech Connect (OSTI)

    Lengyel, K.; Péter, Á.; Kovács, L.; Corradi, G.; Dravecz, G.; Hajdara, I.; Szaller, Zs.; Polgár, K.; Pálfalvi, L.; Unferdorben, M.; Hebling, J.

    2015-12-15

    Owing to the extraordinary richness of its physical properties, congruent lithium niobate has attracted multidecade-long interest both for fundamental science and applications. The combination of ferro-, pyro-, and piezoelectric properties with large electro-optic, acousto-optic, and photoelastic coefficients as well as the strong photorefractive and photovoltaic effects offers a great potential for applications in modern optics. To provide powerful optical components in high energy laser applications, tailoring of key material parameters, especially stoichiometry, is required. This paper reviews the state of the art of growing large stoichiometric LiNbO{sub 3} (sLN) crystals, in particular, the defect engineering of pure and doped sLN with emphasis on optical damage resistant (ODR) dopants (e.g., Mg, Zn, In, Sc, Hf, Zr, Sn). The discussion is focused on crystals grown by the high temperature top seeded solution growth (HTTSSG) technique using alkali oxide fluxing agents. Based on high-temperature phase equilibria studies of the Li{sub 2}O–Nb{sub 2}O{sub 5}–X{sub 2}O ternary systems (X = Na, K, Rb, Cs), the impact of alkali homologue additives on the stoichiometry of the lithium niobate phase will be analyzed, together with a summary of the ultraviolet, infrared, and far-infrared absorption spectroscopic methods developed to characterize the composition of the crystals. It will be shown that using HTTSSG from K{sub 2}O containing flux, crystals closest to the stoichiometric composition can be grown characterized by a UV-edge position of at about 302 nm and a single narrow hydroxyl band in the IR with a linewidth of less than 3 cm{sup −1} at 300 K. The threshold concentrations for ODR dopants depend on crystal stoichiometry and the valence of the dopants; Raman spectra, hydroxyl vibration spectra, and Z-scan measurements prove to be useful to distinguish crystals below and above the photorefractive threshold. Crystals just above the threshold are

  3. Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bayu Aji, L. B.; Wallace, J. B.; Shao, L.; Kucheyev, S. O.

    2016-08-03

    Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a changemore » in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.« less

  4. Tight-binding calculation studies of vacancy and adatom defects in graphene

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Wei; Lu, Wen-Cai; Zhang, Hong-Xing; Ho, K. M.; Wang, C. Z.

    2016-02-19

    Computational studies of complex defects in graphene usually need to deal with a larger number of atoms than the current first-principles methods can handle. We show a recently developed three-center tight-binding potential for carbon is very efficient for large scale atomistic simulations and can accurately describe the structures and energies of various defects in graphene. Using the three-center tight-binding potential, we have systematically studied the stable structures and formation energies of vacancy and embedded-atom defects of various sizes up to 4 vacancies and 4 embedded atoms in graphene. In conclusion, our calculations reveal low-energy defect structures and provide a moremore » comprehensive understanding of the structures and stability of defects in graphene.« less

  5. Localized states and their stability in an anharmonic medium with a nonlinear defect

    SciTech Connect (OSTI)

    Gerasimchuk, I. V.

    2015-10-15

    A comprehensive analysis of soliton states localized near a plane defect (a defect layer) possessing nonlinear properties is carried out within a quasiclassical approach for different signs of nonlinearity of the medium and different characters of interaction of elementary excitations of the medium with the defect. A quantum interpretation is given to these nonlinear localized modes as a bound state of a large number of elementary excitations. The domains of existence of such states are determined, and their properties are analyzed as a function of the character of interaction of elementary excitations between each other and with the defect. A full analysis of the stability of all the localized states with respect to small perturbations of amplitude and phase is carried out analytically, and the frequency of small oscillations of the state localized on the defect is determined.

  6. Time constant of defect relaxation in ion-irradiated 3C-SiC

    SciTech Connect (OSTI)

    Wallace, J. B.; Bayu Aji, L. B.; Kucheyev, S. O.; Shao, L.

    2015-05-18

    Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ∼3 ms (for second order kinetics) and a dynamic annealing efficiency of ∼40% for defects in both Si and C sublattices. This demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.

  7. Exploring the interaction between lithium ion and defective graphene surface using dispersion corrected DFT studies

    SciTech Connect (OSTI)

    Vijayakumar, M.; Hu, Jian Z.

    2013-10-15

    To analyze the lithium ion interaction with realistic graphene surfaces, we carried out dispersion corrected DFT-D3 studies on graphene with common point defects and chemisorbed oxygen containing functional groups along with defect free graphene surface. Our study reveals that, the interaction between lithium ion (Li+) and graphene is mainly through the delocalized π electron of pure graphene layer. However, the oxygen containing functional groups pose high adsorption energy for lithium ion due to the Li-O ionic bond formation. Similarly, the point defect groups interact with lithium ion through possible carbon dangling bonds and/or cation-π type interactions. Overall these defect sites render a preferential site for lithium ions compared with pure graphene layer. Based on these findings, the role of graphene surface defects in lithium battery performance were discussed.

  8. First-principles study of noble gas impurities and defects in UO{sub 2}

    SciTech Connect (OSTI)

    Thompson, Alexander E.; Wolverton, C.

    2011-10-01

    We performed a series of density functional theory + U (DFT + U) calculations to explore the energetics of various defects in UO{sub 2}, i.e., noble gases (He, Ne, Ar, Kr, Xe), Schottky defects, and the interaction between these defects. We found the following: (1) collinear antiferromagnetic UO{sub 2} has an energy-lowering distortion of the oxygen sublattice from ideal fluorite positions; (2) DFT + U qualitatively affects the formation volume of Schottky defect clusters in UO{sub 2} (without U the formation volume is negative, but including U the formation volume is positive); (3) the configuration of the Schottky defect cluster is dictated by a competition between electrostatic and surface energy effects; (4) the incorporation energy of inserting noble gas atoms into an interstitial site has a strong dependence on the volume of the noble gas atom, corresponding to the strain it causes in the interstitial site, from He (0.98 eV) to Xe (9.73 eV); (5) the energetics of each of the noble gas atoms incorporated in Schottky defects show strong favorable binding, due to strain relief associated with moving the noble gas atom from the highly strained interstitial position into the vacant space of the Schottky defect; and (6) for argon, krypton, and xenon, the binding energy of a noble gas impurity with the Schottky defect is larger than the formation energy of a Schottky defect, thereby making the formation of Schottky defects thermodynamically favorable in the presence of these large impurities.

  9. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect (OSTI)

    Taoka, Noriyuki Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200?C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500?C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33?eV from the conduction band minimum and 0.55?eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500?C was observed. The effect of H{sub 2} annealing at around 200?C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  10. Oxide Film and Porosity Defects in Magnesium Alloy AZ91

    SciTech Connect (OSTI)

    Wang, Liang [Mississippi State University (MSU); Rhee, Hongjoo [Mississippi State University (MSU); Felicelli, Sergio D. [Mississippi State University (MSU); Sabau, Adrian S [ORNL; Berry, John T. [Mississippi State University (MSU)

    2009-01-01

    Porosity is a major concern in the production of light metal parts. This work aims to identify some of the mechanisms of microporosity formation in magnesium alloy AZ91. Microstructure analysis was performed on several samples obtained from gravity-poured ingots in graphite plate molds. Temperature data during cooling was acquired with type K thermocouples at 60 Hz at three locations of each casting. The microstructure of samples extracted from the regions of measured temperature was then characterized with optical metallography. Tensile tests and conventional four point bend tests were also conducted on specimens cut from the cast plates. Scanning electron microscopy was then used to observe the microstructure on the fracture surface of the specimens. The results of this study revealed the existence of abundant oxide film defects, similar to those observed in aluminum alloys. Remnants of oxide films were detected on some pore surfaces, and folded oxides were observed in fracture surfaces indicating the presence of double oxides entrained during pouring.

  11. Preparation of Simulated LBL Defects for Round Robin Experiment

    SciTech Connect (OSTI)

    Gerczak, Tyler J.; Baldwin, Charles A.; Hunn, John D.; Montgomery, Fred C.

    2015-12-01

    A critical characteristic of the TRISO fuel design is its ability to retain fission products. During reactor operation, the TRISO layers act as barriers to release of fission products not stabilized in the kernel. Each component of the TRISO particle and compact construction plays a unique role in retaining select fission products, and layer performance is often interrelated. The IPyC, SiC, and OPyC layers are barriers to the release of fission product gases such as Kr and Xe. The SiC layer provides the primary barrier to release of metallic fission products not retained in the kernel, as transport across the SiC layer is rate limiting due to the greater permeability of the IPyC and OPyC layers to many metallic fission products. These attributes allow intact TRISO coatings to successfully retain most fission products released from the kernel, with the majority of released fission products during operation being due to defective, damaged, or failed coatings. This dominant release of fission products from compromised particles contributes to the overall source term in reactor; causing safety and maintenance concerns and limiting the lifetime of the fuel. Under these considerations, an understanding of the nature and frequency of compromised particles is an important part of predicting the expected fission product release and ensuring safe and efficient operation.

  12. Control of Suspect/Counterfeit and Defective Items

    SciTech Connect (OSTI)

    Sheriff, Marnelle L.

    2013-09-03

    This procedure implements portions of the requirements of MSC-MP-599, Quality Assurance Program Description. It establishes the Mission Support Alliance (MSA) practices for minimizing the introduction of and identifying, documenting, dispositioning, reporting, controlling, and disposing of suspect/counterfeit and defective items (S/CIs). employees whose work scope relates to Safety Systems (i.e., Safety Class [SC] or Safety Significant [SS] items), non-safety systems and other applications (i.e., General Service [GS]) where engineering has determined that their use could result in a potential safety hazard. MSA implements an effective Quality Assurance (QA) Program providing a comprehensive network of controls and verification providing defense-in-depth by preventing the introduction of S/CIs through the design, procurement, construction, operation, maintenance, and modification of processes. This procedure focuses on those safety systems, and other systems, including critical load paths of lifting equipment, where the introduction of S/CIs would have the greatest potential for creating unsafe conditions.

  13. Characterization of V-shaped defects in 4H-SiC homoepitaxial layers

    SciTech Connect (OSTI)

    Zhang, Lihua; Su, Dong; Kisslinger, Kim; Stach, Eric; Chung, Gil; Zhang, Jie; Thomas, Bernd; Sanchez, Edward K; Mueller, Stephan G.; Hansen, Darren; Loboda, Mark J.; Wu, Fangzhen; Wang, Huanhuan; Raghothamachar, Balaji; Dudley, Michael

    2014-12-04

    Synchrotron white beam x-ray topography images show that faint needle-like surface morphological features observed on the Si-face of 4H-SiC homoepitaxial layers using Nomarski optical microscopy are associated with V shaped stacking faults in the epilayer. KOH etching of the V shaped defect reveals small oval pits connected by a shallow line which corresponding to the surface intersections of two partial dislocations and the stacking fault connecting them. Transmission electron microscopy (TEM) specimens from regions containing the V shaped defects were prepared using focused ion beam milling, and stacking sequences of (85), (50) and (63) are observed at the faulted region with high resolution TEM. In order to study the formation mechanism of V shaped defect, low dislocation density 4H-SiC substrates were chosen for epitaxial growth, and the corresponding regions before and after epitaxy growth are compared in SWBXT images. It is found that no defects in the substrate are directly associated with the formation of the V shaped defect. Simulation results of the contrast from the two partial dislocations associated with V shaped defect in synchrotron monochromatic beam x-ray topography reveals the opposite sign nature of their Burgers vectors. Therefore, a mechanism of 2D nucleation during epitaxy growth is postulated for the formation of the V shaped defect, which requires elimination of non-sequential 1/4[0001] bilayers from the original structure to create the observed faulted stacking sequence.

  14. Evolution of iron-containing defects during processing of Si solar cells

    SciTech Connect (OSTI)

    Mchedlidze, Teimuraz Weber, Jrg; Mller, Christian; Lauer, Kevin

    2014-12-28

    The formation of iron-containing defects was studied during the fabrication process of a Si solar cell. Three Cz-Si crystals with different iron content in the feedstock were grown for the study. Iron-containing defects in and near-to the n{sup +}p-junction volume (NJV) of the cells are formed directly after phosphorus diffusion due to an inflow of iron atoms from the dissolving iron-silicide precipitates. These NJV-defects strongly affect the dark saturation current of the junctions. Partial dissolution or gettering of the NJV-defects during formation of the antireflection coating is accompanied by an increase in defect concentrations in the bulk of the cell. Further deterioration of bulk carrier lifetime during the formation of electrical contacts is related to the partial dissolution of remaining iron-silicide precipitates during the firing process. A general description of the defect evolution in iron-contaminated wafers during solar cell processing is presented and possible strategies for reducing the influence of iron-containing defects are proposed.

  15. Radiation defect dynamics in Si at room temperature studied by pulsed ion beams

    SciTech Connect (OSTI)

    Wallace, J. B.; Myers, M. T.; Charnvanichborikarn, S.; Bayu Aji, L. B.; Kucheyev, S. O.; Shao, L.

    2015-10-07

    The evolution of radiation defects after the thermalization of collision cascades often plays the dominant role in the formation of stable radiation disorder in crystalline solids of interest to electronics and nuclear materials applications. Here, we explore a pulsed-ion-beam method to study defect interaction dynamics in Si crystals bombarded at room temperature with 500 keV Ne, Ar, Kr, and Xe ions. The effective time constant of defect interaction is measured directly by studying the dependence of lattice disorder, monitored by ion channeling, on the passive part of the beam duty cycle. The effective defect diffusion length is revealed by the dependence of damage on the active part of the beam duty cycle. Results show that the defect relaxation behavior obeys a second order kinetic process for all the cases studied, with a time constant in the range of ∼4–13 ms and a diffusion length of ∼15–50 nm. Both radiation dynamics parameters (the time constant and diffusion length) are essentially independent of the maximum instantaneous dose rate, total ion dose, and dopant concentration within the ranges studied. However, both the time constant and diffusion length increase with increasing ion mass. This demonstrates that the density of collision cascades influences not only defect production and annealing efficiencies but also the defect interaction dynamics.

  16. Characterization of V-shaped defects in 4H-SiC homoepitaxial layers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Lihua; Su, Dong; Kisslinger, Kim; Stach, Eric; Chung, Gil; Zhang, Jie; Thomas, Bernd; Sanchez, Edward K; Mueller, Stephan G.; Hansen, Darren; et al

    2014-12-04

    Synchrotron white beam x-ray topography images show that faint needle-like surface morphological features observed on the Si-face of 4H-SiC homoepitaxial layers using Nomarski optical microscopy are associated with V shaped stacking faults in the epilayer. KOH etching of the V shaped defect reveals small oval pits connected by a shallow line which corresponding to the surface intersections of two partial dislocations and the stacking fault connecting them. Transmission electron microscopy (TEM) specimens from regions containing the V shaped defects were prepared using focused ion beam milling, and stacking sequences of (85), (50) and (63) are observed at the faulted regionmore » with high resolution TEM. In order to study the formation mechanism of V shaped defect, low dislocation density 4H-SiC substrates were chosen for epitaxial growth, and the corresponding regions before and after epitaxy growth are compared in SWBXT images. It is found that no defects in the substrate are directly associated with the formation of the V shaped defect. Simulation results of the contrast from the two partial dislocations associated with V shaped defect in synchrotron monochromatic beam x-ray topography reveals the opposite sign nature of their Burgers vectors. Therefore, a mechanism of 2D nucleation during epitaxy growth is postulated for the formation of the V shaped defect, which requires elimination of non-sequential 1/4[0001] bilayers from the original structure to create the observed faulted stacking sequence.« less

  17. Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

    DOE Patents [OSTI]

    Warren, W.L.; Vanheusden, K.J.R.; Schwank, J.R.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.

    1998-07-28

    A method is disclosed for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer. 5 figs.

  18. Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

    DOE Patents [OSTI]

    Warren, William L.; Vanheusden, Karel J. R.; Schwank, James R.; Fleetwood, Daniel M.; Shaneyfelt, Marty R.; Winokur, Peter S.; Devine, Roderick A. B.

    1998-01-01

    A method for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus-voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer.

  19. Self-regulation mechanism for charged point defects in hybrid halide perovskites

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Walsh, Aron; Scanlon, David O.; Chen, Shiyou; Gong, X. G.; Wei, Su -Huai

    2014-12-11

    Hybrid halide perovskites such as methylammonium lead iodide (CH3NH3PbI3) exhibit unusually low free-carrier concentrations despite being processed at low-temperatures from solution. We demonstrate, through quantum mechanical calculations, that an origin of this phenomenon is a prevalence of ionic over electronic disorder in stoichiometric materials. Schottky defect formation provides a mechanism to self-regulate the concentration of charge carriers through ionic compensation of charged point defects. The equilibrium charged vacancy concentration is predicted to exceed 0.4 % at room temperature. Furthermore, this behavior, which goes against established defect conventions for inorganic semiconductors, has implications for photovoltaic performance.

  20. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    SciTech Connect (OSTI)

    Venkatesh, S.; Roqan, I. S.; Franklin, J. B.; Ryan, M. P.; McLachlan, M. A.; Alford, N. M.; Lee, J.-S.; Ohldag, Hendrik

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (defect band formed due to oxygen deficiency related defect complexes. Mott's theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

  1. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    SciTech Connect (OSTI)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-07-14

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO{sub 2} (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  2. Identification of luminescent surface defect in SiC quantum dots

    SciTech Connect (OSTI)

    Dai, Dejian; Guo, Xiaoxiao; Fan, Jiyang

    2015-02-02

    The surface defect that results in the usually observed blue luminescence in the SiC quantum dots (QDs) remains unclear. We experimentally identify that the surface defect C=O (in COO) is responsible for this constant blue luminescence. The HOC=O [n{sub (OH)} ? ?*{sub (CO)}] interaction between the hydroxyl and carbonyl groups changes the energy levels of C=O and makes the light absorption/emission arise at around 326/438?nm. Another surface defect (SiSi) is identified and its light absorption contributes to both C=O-related luminescence and quantum-confinement luminescence of the SiC QDs.

  3. Structural defects in GaN revealed by Transmission Electron Microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liliental-Weber, Zuzanna

    2014-09-08

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  4. Simplified models of growth, defect formation, and thermal conductivity in diamond chemical vapor deposition

    SciTech Connect (OSTI)

    Coltrin, M.E.; Dandy, D.S.

    1996-04-01

    A simplified surface reaction mechanism is presented for the CVD of diamond thin films. The mechanism also accounts for formation of point defects in the diamond lattice, an alternate, undesirable reaction pathway. Both methyl radicals and atomic C are considered as growth precursors. While not rigorous in all details, the mechanism is useful in describing the CVD diamond process over a wide range of reaction conditions. It should find utility in reactor modeling studies, for example in optimizing diamond growth rate while minimizing defect formation. This report also presents a simple model relating the diamond point-defect density to the thermal conductivity of the material.

  5. Process Guide for the Identification and Disposition of S/CI or Defective

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Items at Department of Energy Facilities | Department of Energy Process Guide for the Identification and Disposition of S/CI or Defective Items at Department of Energy Facilities Process Guide for the Identification and Disposition of S/CI or Defective Items at Department of Energy Facilities August 2011 The Process Guide for the Identification and Disposition of S/CI or Defective Items was developed to help DOE facilities to collect, screen, communicate information, and dispose of S/CI or

  6. Structural defects in GaN revealed by Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Liliental-Weber, Zuzanna

    2014-04-18

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  7. Defects in GaInNAs: What We've Learned So Far

    SciTech Connect (OSTI)

    Ptak, A. J.; Kurtz, S.; Johnston, S. W.; Friedman, D. J.; Geisz, J. F.; Olson, J. M.; McMahon, W. E.; Kibbler, A. E.; Kramer, C.; Young, M.; Wei, S.-H; Zhang, S.B.; Janotti, A.; Carrier, P.; Crandall, R. S.; Keyes, B. M.; Dippo, P.; Norman, A. G.; Metzger, W. K.; Ahrenkiel, R. K.

    2003-05-01

    We show results from a number of experimental and theoretical investigations on GaInNAs in an attempt to provide a more complete picture of defects in this material than is currently available. Much has been learned in recent years, including the effects of impurities such as hydrogen and carbon, the behavior of GaInNAs on annealing, and the defects that cause a degradation of material properties, including photoluminescence intensity and, especially important for solar cells, minority-carrier lifetimes. Much of our current understanding stems from a comparison of GaInNAs grown by both MOCVD and MBE. This comparison, along with the use of several characterization techniques and theoretical modeling, has allowed us to understand the roles of various defects and to identify a signature for the defect that reduces the minority-carrier lifetime.

  8. Influence of deep level defects on carrier lifetime in CdZnTe:In

    SciTech Connect (OSTI)

    Guo, Rongrong; Jie, Wanqi Wang, Ning; Zha, Gangqiang; Xu, Yadong; Wang, Tao; Fu, Xu

    2015-03-07

    The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining {sup 241}Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

  9. Spin and photophysics of carbon-antisite vacancy defect in

    Office of Scientific and Technical Information (OSTI)

    Spin and photophysics of carbon-antisite vacancy defect in 4 H silicon carbide: A potential quantum bit Not Available Temp HTML ...

  10. Tuning thermal conductivity in homoepitaxial SrTiO{sub 3} films via defects

    SciTech Connect (OSTI)

    Brooks, Charles M.; Wilson, Richard B.; Cahill, David G.; Schäfer, Anna; Schubert, Jürgen; Mundy, Julia A.; Holtz, Megan E.; Muller, David A.; Schlom, Darrell G.

    2015-08-03

    We demonstrate the ability to tune the thermal conductivity of homoepitaxial SrTiO{sub 3} films deposited by reactive molecular-beam epitaxy by varying growth temperature, oxidation environment, and cation stoichiometry. Both point defects and planar defects decrease the longitudinal thermal conductivity (k{sub 33}), with the greatest decrease in films of the same composition observed for films containing planar defects oriented perpendicular to the direction of heat flow. The longitudinal thermal conductivity can be modified by as much as 80%—from 11.5 W m{sup −1}K{sup −1} for stoichiometric homoepitaxial SrTiO{sub 3} to 2 W m{sup −1}K{sup −1} for strontium-rich homoepitaxial Sr{sub 1+δ}TiO{sub x} films—by incorporating (SrO){sub 2} Ruddlesden-Popper planar defects.

  11. Amorphous carbon film growth on Si: Correlation between stress and generation of defects into the substrate

    SciTech Connect (OSTI)

    Brusa, R.S.; Macchi, C.; Mariazzi, S.; Karwasz, G.P.; Laidani, N.; Bartali, R.; Anderle, M.

    2005-05-30

    Amorphous carbon films of several thicknesses were prepared by graphite sputtering on crystalline silicon substrate. The samples were depth profiled with positron annihilation spectroscopy for open-volume measurements and characterized for their residual internal stress. It was found that after film growth the substrate presents vacancy-like defects decorated by oxygen in a layer extending in the substrate by several tens of nanometers beyond the film/Si interface. The width of the defected layer and the decoration of vacancy-like defects are directly and inversely proportional to the measured intensity of the residual stress, respectively. These findings indicate the existence of a relaxation mechanism of the stress in the films that involves deeply the substrate. The decorated vacancy-like defects are suggested to be bounded to dislocations induced in the substrate by the stress relaxation.

  12. Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint

    SciTech Connect (OSTI)

    Yan, F.; Johnston, S.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

    2011-07-01

    Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

  13. Classification of Lattice Defects in the Kesterite Cu2ZnSnS4...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Classification of Lattice Defects in the Kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 Earth-Abundant Solar Cell Absorbers Citation Details In-Document Search Title: ...

  14. Defect structure of indium tin oxide and its relationship to conductivity

    SciTech Connect (OSTI)

    Gonzalez, G. B.; Cohen, J. B.; Hwang, J.-H.; Mason, T. O.; Hodges, J. P.; Jorgensen, J. D.

    2000-05-09

    Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Although indium tin oxide (ITO) is the most frequently used commercial TCO, its defect structure is still uncertain. Previously, its defect chemistry has been inferred based on the conductivity of the material. To directly study the defect structure of ITO, the authors prepared powders under different processing environments and performed neutron powder diffraction. Structural information was obtained by performing Rietveld analysis. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the defect oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites, showing a strong preference for the b site. These structural results are correlated with the measured electrical properties of the same samples.

  15. Proceedings of the TMS symposium on radiation facilities and defect studies

    SciTech Connect (OSTI)

    Snead, C.L. Jr.

    1992-11-01

    Intent of the symposium is to highlight the various means of producing and characterizing irradition-induced defects in materials of interest in nuclear applications. Viewgraphs are presented for 18 papers. Separate abstracts were prepared for the data base.

  16. Proceedings of the TMS symposium on radiation facilities and defect studies

    SciTech Connect (OSTI)

    Snead, C.L. Jr.

    1992-01-01

    Intent of the symposium is to highlight the various means of producing and characterizing irradition-induced defects in materials of interest in nuclear applications. Viewgraphs are presented for 18 papers. Separate abstracts were prepared for the data base.

  17. Defect-induced magnetism in cobalt-doped ZnO epilayers

    SciTech Connect (OSTI)

    Ciatto, G.; Fonda, E.; Trolio, A. Di; Alippi, P.; Varvaro, G.; Bonapasta, A. Amore; Polimeni, A.; Capizzi, M.

    2014-02-21

    We used a synergic Co-edge X-ray absorption spectroscopy (XAS) and density functional theory calculations approach to perform a study of defects which could account for the room temperature ferromagnetism of ZnCoO, an oxide of great potential interest in semiconductor spintronics. Our results suggest that a key role is played by specific defect complexes in which O vacancies are located close to the Co atoms. Extended defects such as Co clusters have a marginal function, although we observe their formation at the epilayer surface under certain growth conditions. We also show preliminary results of the study of hydrogen-induced defects in ZnCoO epilayers deliberately hydrogen irradiated via a Kaufman source. Hydrogen was in fact predicted to mediate a ferromagnetic spin-spin interaction between neighboring magnetic impurities.

  18. A multiscale method for the analysis of defect behavior in MO during electron irradiation

    SciTech Connect (OSTI)

    Rest, J.; Insepov, Z.; Ye, B.; Yun, D.

    2014-10-01

    In order to overcome a lack of experimental information on values for key materials properties and kinetic coefficients, a multiscale modeling approach is applied to defect behavior in irradiated Mo where key materials properties, such as point defect (vacancy and interstitial) migration enthalpies as well as kinetic factors such as dimer formation, defect recombination, and self interstitial–interstitial loop interaction coefficients, are obtained by molecular dynamics calculations and implemented into rate-theory simulations of defect behavior. The multiscale methodology is validated against interstitial loop growth data obtained from electron irradiation of pure Mo. It is shown that the observed linear behavior of the loop diameter vs. the square root of irradiation time is a direct consequence of the 1D migration of self-interstitial atoms.

  19. An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

    SciTech Connect (OSTI)

    Brenet, G.; Timerkaeva, D.; Caliste, D.; Pochet, P.; Sgourou, E. N.; Londos, C. A.

    2015-09-28

    We introduce an atomistic description of the kinetic Mass Action Law to predict concentrations of defects and complexes. We demonstrate in this paper that this approach accurately predicts carbon/oxygen related defect concentrations in silicon upon annealing. The model requires binding and migration energies of the impurities and complexes, here obtained from density functional theory (DFT) calculations. Vacancy-oxygen complex kinetics are studied as a model system during both isochronal and isothermal annealing. Results are in good agreement with experimental data, confirming the success of the methodology. More importantly, it gives access to the sequence of chain reactions by which oxygen and carbon related complexes are created in silicon. Beside the case of silicon, the understanding of such intricate reactions is a key to develop point defect engineering strategies to control defects and thus semiconductors properties.

  20. Effect of defects on long-pulse laser-induced damage of two kinds of optical thin films

    SciTech Connect (OSTI)

    Wang Bin; Qin Yuan; Ni Xiaowu; Shen Zhonghua; Lu Jian

    2010-10-10

    In order to study the effect of defects on the laser-induced damage of different optical thin films, we carried out damage experiments on two kinds of thin films with a 1ms long-pulse laser. Surface-defect and subsurface-defect damage models were used to explain the damage morphology. The two-dimensional finite element method was applied to calculate the temperature and thermal-stress fields of these two films. The results show that damages of the two films are due to surface and subsurface defects, respectively. Furthermore, the different dominant defects for thin films of different structures are discussed.

    1. Energy Dissipation to Defect Evolution (EDDE) | U.S. DOE Office of Science

      Office of Science (SC) Website

      (SC) Dissipation to Defect Evolution (EDDE) Energy Frontier Research Centers (EFRCs) EFRCs Home Centers EFRC External Websites Research Science Highlights News & Events Publications History Contact BES Home Centers Energy Dissipation to Defect Evolution (EDDE) Print Text Size: A A A FeedbackShare Page EDDE Header Director Yanwen Zhang Lead Institution Oak Ridge National Laboratory Year Established 2014 Mission To develop a fundamental understanding of energy dissipation mechanisms

    2. Defects Lead to Order | U.S. DOE Office of Science (SC)

      Office of Science (SC) Website

      Defects Lead to Order Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy Sciences Advisory Committee (BESAC) Community Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: Email Us More Information » 12.14.15 Defects Lead to Order Surprising order found in bundles of protein

    3. Revealing origin of quasi-one dimensional current transport in defect rich two dimensional materials

      SciTech Connect (OSTI)

      Lotz, Mikkel R.; Boll, Mads; Bøggild, Peter; Petersen, Dirch H.; Hansen, Ole; Kjær, Daniel

      2014-08-04

      The presence of defects in graphene have for a long time been recognized as a bottleneck for its utilization in electronic and mechanical devices. We recently showed that micro four-point probes may be used to evaluate if a graphene film is truly 2D or if defects in proximity of the probe will lead to a non-uniform current flow characteristic of lower dimensionality. In this work, simulations based on a finite element method together with a Monte Carlo approach are used to establish the transition from 2D to quasi-1D current transport, when applying a micro four-point probe to measure on 2D conductors with an increasing amount of line-shaped defects. Clear 2D and 1D signatures are observed at low and high defect densities, respectively, and current density plots reveal the presence of current channels or branches in defect configurations yielding 1D current transport. A strong correlation is found between the density filling factor and the simulation yield, the fraction of cases with 1D transport and the mean sheet conductance. The upper transition limit is shown to agree with the percolation threshold for sticks. Finally, the conductance of a square sample evaluated with macroscopic edge contacts is compared to the micro four-point probe conductance measurements and we find that the micro four-point probe tends to measure a slightly higher conductance in samples containing defects.

    4. Leak before break behaviour of austenitic and ferritic pipes containing circumferential defects

      SciTech Connect (OSTI)

      Stadtmueller, W.; Sturm, D.

      1997-04-01

      Several research projects carried out at MPA Stuttgart to investigate the Leak-before-Break (LBB) behavior of safety relevant pressure bearing components are summarized. Results presented relate to pipes containing circumferential defects subjected to internal pressure and external bending loading. An overview of the experimentally determined results for ferritic components is presented. For components containing postulated or actual defects, the dependence of the critical loading limit on the defect size is shown in the form of LBB curves. These are determined experimentally and/or by calculation for through-wall slits, and represent the boundary curve between leakage and massive fracture. For surface defects and a given bending moment and internal pressure, no fracture will occur if the length at leakage remains smaller than the critical defect length given by the LBB curve for through-wall defects. The predictive capability of engineering calculational methods are presented by way of example. The investigation programs currently underway, testing techniques, and initial results are outlined.

    5. Introducing thermally stable inter-tube defects to assist off-axial phonon transport in carbon nanotube films

      SciTech Connect (OSTI)

      Wang, Jing; Chen, Di; Wallace, Joseph; Gigax, Jonathan; Wang, Xuemei; Shao, Lin

      2014-05-12

      Through integrated molecular dynamics (MD) simulations and experimental studies, we demonstrated the feasibility of an ion-irradiation-and-annealing based phonon engineering technique to enhance thermal conductivity of carbon nanotube (CNT) films. Upon ion irradiation of CNT films, both inter-tube defects and intra-tube defects are introduced. Our MD simulations show that inter-tube defects created between neighboring tubes are much more stable than intra-tube defects created on tube graphitic planes. Upon thermal annealing, intra-tube defects are preferentially removed but inter-tube defects stay. Consequently, axial phonon transport increases due to reduced phonon scattering and off-axial phonon transport is sustained due to the high stability of inter-tube defects, leading to a conductivity enhancement upon annealing. The modeling predictions agree with experimental observations that thermal conductivities of CNT films were enhanced after 2 MeV hydrogen ion irradiations and conductivities were further enhanced upon post irradiation annealing.

    6. 3D Simulation of Missing Pellet Surface Defects in Light Water Reactor Fuel Rods

      SciTech Connect (OSTI)

      B.W. Spencer; J.D. Hales; S.R. Novascone; R.L. Williamson

      2012-09-01

      The cladding on light water reactor (LWR) fuel rods provides a stable enclosure for fuel pellets and serves as a first barrier against fission product release. Consequently, it is important to design fuel to prevent cladding failure due to mechanical interactions with fuel pellets. Cladding stresses can be effectively limited by controlling power increase rates. However, it has been shown that local geometric irregularities caused by manufacturing defects known as missing pellet surfaces (MPS) in fuel pellets can lead to elevated cladding stresses that are sufficiently high to cause cladding failure. Accurate modeling of these defects can help prevent these types of failures. Nuclear fuel performance codes commonly use a 1.5D (axisymmetric, axially-stacked, one-dimensional radial) or 2D axisymmetric representation of the fuel rod. To study the effects of MPS defects, results from 1.5D or 2D fuel performance analyses are typically mapped to thermo-mechanical models that consist of a 2D plane-strain slice or a full 3D representation of the geometry of the pellet and clad in the region of the defect. The BISON fuel performance code developed at Idaho National Laboratory employs either a 2D axisymmetric or 3D representation of the full fuel rod. This allows for a computational model of the full fuel rod to include local defects. A 3D thermo-mechanical model is used to simulate the global fuel rod behavior, and includes effects on the thermal and mechanical behavior of the fuel due to accumulation of fission products, fission gas production and release, and the effects of fission gas accumulation on thermal conductivity across the fuel-clad gap. Local defects can be modeled simply by including them in the 3D fuel rod model, without the need for mapping between two separate models. This allows for the complete set of physics used in a fuel performance analysis to be included naturally in the computational representation of the local defect, and for the effects of the

    7. Surface defects characterization in a quantum wire by coherent phonons scattering

      SciTech Connect (OSTI)

      Rabia, M. S.

      2015-03-30

      The influence of surface defects on the scattering properties of elastic waves in a quasi-planar crystallographic waveguide is studied in the harmonic approximation using the matching method formalism. The structural model is based on three infinite atomic chains forming a perfect lattice surmounted by an atomic surface defect. Following the Landauer approach, we solve directly the Newton dynamical equation with scattering boundary conditions and taking into account the next nearest neighbour’s interaction. A detailed study of the defect-induced fluctuations in the transmission spectra is presented for different adatom masses. As in the electronic case, the presence of localized defect-induced states leads to Fano-like resonances. In the language of mechanical vibrations, these are called continuum resonances. Numerical results reveal the intimate relation between transmission spectra and localized defect states and provide a basis for the understanding of conductance spectroscopy experiments in disordered mesoscopic systems. The results could be useful for the design of phononic devices.

    8. Effects of local defect growth in direct-drive cryogenic implosions on OMEGA

      SciTech Connect (OSTI)

      Igumenshchev, I. V.; Shmayda, W. T.; Harding, D. R.; Sangster, T. C.; Goncharov, V. N.; Department of Mechanical Engineering, University of Rochester, Rochester, New York 14623 ; Meyerhofer, D. D.; Department of Mechanical Engineering, University of Rochester, Rochester, New York 14623; Department of Physics and Astronomy, University of Rochester, Rochester, New York 14623

      2013-08-15

      Spherically symmetric, low-adiabat (adiabat ? ? 3) cryogenic direct-drive-implosion experiments on the OMEGA laser [T. R. Boehly et al., Opt. Commun. 133, 495 (1995)] yield less than 10% of the neutrons predicted in one-dimensional hydrodynamic simulations. Two-dimensional hydrodynamic simulations suggest that this performance degradation can be explained assuming perturbations from isolated defects of submicron to tens-of-micron scale on the outer surface or inside the shell of implosion targets. These defects develop during the cryogenic filling process and typically number from several tens up to hundreds for each target covering from about 0.2% to 1% of its surface. The simulations predict that such defects can significantly perturb the implosion and result in the injection of about 1 to 2 ?g of the hot ablator (carbon-deuterium) and fuel (deuterium-tritium) materials from the ablation surface into the targets. Both the hot mass injection and perturbations of the shell reduce the final shell convergence ratio and implosion performance. The injected carbon ions radiatively cool the hot spot, reducing the fuel temperature, and further reducing the neutron yield. The negative effect of local defects can be minimized by decreasing the number and size of these defects and/or using more hydrodynamically stable implosion designs with higher shell adiabat.

    9. Tuning Interfacial Thermal Conductance of Graphene Embedded in Soft Materials by Vacancy Defects

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Liu, Ying; Hu, Chongze; Huang, Jingsong; Sumpter, Bobby G; Qiao, Rui

      2015-01-01

      Nanocomposites based on graphene dispersed in matrices of soft materials are promising thermal management materials. Their effective thermal conductivity depends on both the thermal conductivity of graphene and the conductance of the thermal transport across graphene-matrix interfaces. Here we report on molecular dynamics simulations of the thermal transport across the interfaces between defected graphene and soft materials in two different modes: in the across mode, heat enters graphene from one side of its basal plane and leaves through the other side; in the non-across mode, heat enters or leaves a graphene simultaneously from both sides of its basal plane. Wemore » show that, as the density of vacancy defects in graphene increases from 0 to 8%, the conductance of the interfacial thermal transport in the across mode increases from 160.4 16 to 207.8 11 MW/m2K, while that in the non-across mode increases from 7.2 0.1 to 17.8 0.6 MW/m2K. The molecular mechanisms for these variations of thermal conductance are clarified by using the phonon density of states and structural characteristics of defected graphenes. On the basis of these results and effective medium theory, we show that it is possible to enhance the effective thermal conductivity of thermal nanocomposites by tuning the density of vacancy defects in graphene despite the fact that graphene s thermal conductivity always decreases as vacancy defects are introduced.« less

    10. Topological defects in electric double layers of ionic liquids at carbon interfaces

      SciTech Connect (OSTI)

      Black, Jennifer M.; Okatan, Mahmut Baris; Feng, Guang; Cummings, Peter T.; Kalinin, Sergei V.; Balke, Nina

      2015-06-07

      The structure and properties of the electrical double layer in ionic liquids is of interest in a wide range of areas including energy storage, catalysis, lubrication, and many more. Theories describing the electrical double layer for ionic liquids have been proposed, however a full molecular level description of the double layer is lacking. To date, studies have been predominantly focused on ion distributions normal to the surface, however the 3D nature of the electrical double layer in ionic liquids requires a full picture of the double layer structure not only normal to the surface, but also in plane. Here we utilize 3D force mapping to probe the in plane structure of an ionic liquid at a graphite interface and report the direct observation of the structure and properties of topological defects. The observation of ion layering at structural defects such as step-edges, reinforced by molecular dynamics simulations, defines the spatial resolution of the method. Observation of defects allows for the establishment of the universality of ionic liquid behavior vs. separation from the carbon surface and to map internal defect structure. In conclusion, these studies offer a universal pathway for probing the internal structure of topological defects in soft condensed matter on the nanometer level in three dimensions.

    11. Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Seo, Hosung; Govoni, Marco; Galli, Giulia

      2016-02-15

      Spin defects in wide-band gap semiconductors are promising systems for the realization of quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been realized in materials with strong covalent bonds. Here, we introduce a strain-driven scheme to rationally design defect spins in functional ionic crystals, which may operate as potential qubits. In particular, using a combination of state-of-the-art ab-initio calculations based on hybrid density functional and many-body perturbation theory, we predicted that the negatively charged nitrogen vacancy center in piezoelectric aluminum nitride exhibits spin-triplet ground states under realistic uni- and bi-axial strain conditions; such states maymore » be harnessed for the realization of qubits. As a result, the strain-driven strategy adopted here can be readily extended to a wide range of point defects in other wide-band gap semiconductors, paving the way to controlling the spin properties of defects in ionic systems for potential spintronic technologies.« less

    12. Topological defects in electric double layers of ionic liquids at carbon interfaces

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Black, Jennifer M.; Okatan, Mahmut Baris; Feng, Guang; Cummings, Peter T.; Kalinin, Sergei V.; Balke, Nina

      2015-06-07

      The structure and properties of the electrical double layer in ionic liquids is of interest in a wide range of areas including energy storage, catalysis, lubrication, and many more. Theories describing the electrical double layer for ionic liquids have been proposed, however a full molecular level description of the double layer is lacking. To date, studies have been predominantly focused on ion distributions normal to the surface, however the 3D nature of the electrical double layer in ionic liquids requires a full picture of the double layer structure not only normal to the surface, but also in plane. Here wemore » utilize 3D force mapping to probe the in plane structure of an ionic liquid at a graphite interface and report the direct observation of the structure and properties of topological defects. The observation of ion layering at structural defects such as step-edges, reinforced by molecular dynamics simulations, defines the spatial resolution of the method. Observation of defects allows for the establishment of the universality of ionic liquid behavior vs. separation from the carbon surface and to map internal defect structure. In conclusion, these studies offer a universal pathway for probing the internal structure of topological defects in soft condensed matter on the nanometer level in three dimensions.« less

    13. Tuning Interfacial Thermal Conductance of Graphene Embedded in Soft Materials by Vacancy Defects

      SciTech Connect (OSTI)

      Liu, Ying; Hu, Chongze; Huang, Jingsong; Sumpter, Bobby G; Qiao, Rui

      2015-01-01

      Nanocomposites based on graphene dispersed in matrices of soft materials are promising thermal management materials. Their effective thermal conductivity depends on both the thermal conductivity of graphene and the conductance of the thermal transport across graphene-matrix interfaces. Here we report on molecular dynamics simulations of the thermal transport across the interfaces between defected graphene and soft materials in two different modes: in the across mode, heat enters graphene from one side of its basal plane and leaves through the other side; in the non-across mode, heat enters or leaves a graphene simultaneously from both sides of its basal plane. We show that, as the density of vacancy defects in graphene increases from 0 to 8%, the conductance of the interfacial thermal transport in the across mode increases from 160.4 16 to 207.8 11 MW/m2K, while that in the non-across mode increases from 7.2 0.1 to 17.8 0.6 MW/m2K. The molecular mechanisms for these variations of thermal conductance are clarified by using the phonon density of states and structural characteristics of defected graphenes. On the basis of these results and effective medium theory, we show that it is possible to enhance the effective thermal conductivity of thermal nanocomposites by tuning the density of vacancy defects in graphene despite the fact that graphene s thermal conductivity always decreases as vacancy defects are introduced.

    14. Defect-related internal dissipation in mechanical resonators and the study of coupled mechanical systems.

      SciTech Connect (OSTI)

      Friedmann, Thomas Aquinas; Czaplewski, David A.; Sullivan, John Patrick; Modine, Normand Arthur; Wendt, Joel Robert; Aslam, Dean (Michigan State University, Lansing, MI); Sepulveda-Alancastro, Nelson (University of Puerto Rico, Mayaguez, PR)

      2007-01-01

      Understanding internal dissipation in resonant mechanical systems at the micro- and nanoscale is of great technological and fundamental interest. Resonant mechanical systems are central to many sensor technologies, and microscale resonators form the basis of a variety of scanning probe microscopies. Furthermore, coupled resonant mechanical systems are of great utility for the study of complex dynamics in systems ranging from biology to electronics to photonics. In this work, we report the detailed experimental study of internal dissipation in micro- and nanomechanical oscillators fabricated from amorphous and crystalline diamond materials, atomistic modeling of dissipation in amorphous, defect-free, and defect-containing crystalline silicon, and experimental work on the properties of one-dimensional and two-dimensional coupled mechanical oscillator arrays. We have identified that internal dissipation in most micro- and nanoscale oscillators is limited by defect relaxation processes, with large differences in the nature of the defects as the local order of the material ranges from amorphous to crystalline. Atomistic simulations also showed a dominant role of defect relaxation processes in controlling internal dissipation. Our studies of one-dimensional and two-dimensional coupled oscillator arrays revealed that it is possible to create mechanical systems that should be ideal for the study of non-linear dynamics and localization.

    15. Simulation of the signals of a pancake-type transducer caused by a plane defect of arbitrary form

      SciTech Connect (OSTI)

      Beda, P.I.; Putnikov, Yu.G.

      1994-10-01

      Redistribution of eddy currents caused by a defect is represented by a multitude of the fine circular contours located in that portion of the area of significant eddy currents associated with the defect. The current in the contours of the model {Delta}I{sub km} is expressed in terms of the primary current of each defect I{sub km} and the function of influence of the defect calculated with use of equivalent electrical circuits. The discretely distributed density of eddy currents is considered as an external current in the Helmholtz equation by solution of which an equation is obtained for the eddy current transducer voltage introduced by the defect. The method presented for calculation of eddy current transducer signals from a plane defect may be used in many cases for any type of pancake, solenoid, submersible, screen, and other transducers and for any form of object of inspection when the rule of spatial distribution of the eddy current density is known.

    16. Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Bayu Aji, L. B.; Wallace, J. B.; Shao, L.; Kucheyev, S. O.

      2016-04-14

      Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal a diffusion length of ~10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. Lastly, these results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.

    17. A qualitative study of spin polarization effect in defect tuned Co/graphene/Co nanostructures

      SciTech Connect (OSTI)

      Mandal, Sumit E-mail: cnssks@iacs.res.in; Saha, Shyamal K. E-mail: cnssks@iacs.res.in

      2014-10-15

      Theoretical reports predict that in contact with a ferromagnetic giant spin, spin polarization evolves in defective graphene since defects in graphene act as local spin moments. We have synthesized different Co/graphene/Co nano spin valve like structures tuning the degree of defect applying ultrasonic vibration and characterized them by Raman spectroscopy. Initially with increasing I{sub D}/I{sub G} ratio in Raman spectra, antiferromagnetic coupling between the Co nanosheets on either sides of graphene enhances leading to betterment in spin transport through graphene. But for highest I{sub D}/I{sub G}, a totally new phenomenon called antiferro quadrupolar ordering (AFQ) takes place which eventually reduces the spin polarization effect.

    18. Direct Evidence of Phosphorus-Defect Complexes in n -Type Amorphous Silicon and Hydrogenated Amorphous Silicon

      SciTech Connect (OSTI)

      Petkov, M.P.; Weber, M.H.; Lynn, K.G.; Crandall, R.S.; Ghosh, V.J.

      1999-05-01

      We use positron annihilation spectroscopy (PAS) to identify the phosphorus-defect complex ({sup {asterisk}}D{sup {minus}}) in n -type hydrogenated amorphous Si (a -Si:H). The positrons are attracted and localized at the small open volume associated with the dangling bond defects. The radiation detected after annihilation gives a characteristic P signature, regarded as a {sup {asterisk}}D{sup {minus}} {open_quotes}fingerprint.{close_quotes} Additional evidence is obtained from a comparison to P-implanted amorphized Si, as well as from theoretical calculations. This work lays the foundation for PAS studies of impurity-defect related processes in a -Si:H. {copyright} {ital 1999} {ital The American Physical Society}

    19. Influence of defects on positron transmission and annihilation in the lithium fluoride crystal

      SciTech Connect (OSTI)

      Varisov, A.Z.; Kozlov, V.G.

      1984-05-01

      The positron implantation profile and the angular distribution of annihilation ..gamma.. quanta were determined for a lithium fluoride crystal under ..beta../sup +/ and ..gamma.. irradiation (/sup 22/Na source). The positron absorption coefficient of the irradiated crystal was ..cap alpha.. = 76.2 +- 1.5 cm/sup -1/. The angular distribution had a strong narrow component. After thermal bleaching of the crystal, ..cap alpha.. = 91.9 +- 1.5 cm/sup -1/, the narrow component made a smaller contribution to the angular distribution, and its half-width increased. The positron mobility was found to be ..mu.. = 18 +- 8 cm/sup 2/ x V/sup -1/ x sec/sup -1/. It is suggested that defects influence in two ways the fate of positrons in the lithium fluoride crystal: free positrons may be trapped by some defects (cationic vacancies) or annihilated in collisions with others (F centers). The defect concentration is estimated.

    20. Inspection and monitoring of wind turbine blade-embedded wave defects during fatigue testing

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Niezrecki, Christopher; Avitabile, Peter; Chen, Julie; Sherwood, James; Lundstrom, Troy; LeBlanc, Bruce; Hughes, Scott; Desmond, Michael; Beattie, Alan; Rumsey, Mark; et al

      2014-05-20

      The research we present in this article focuses on a 9-m CX-100 wind turbine blade, designed by a team led by Sandia National Laboratories and manufactured by TPI Composites Inc. The key difference between the 9-m blade and baseline CX-100 blades is that this blade contains fabric wave defects of controlled geometry inserted at specified locations along the blade length. The defect blade was tested at the National Wind Technology Center at the National Renewable Energy Laboratory using a schedule of cycles at increasing load level until failure was detected. Our researchers used digital image correlation, shearography, acoustic emission, fiber-opticmore » strain sensing, thermal imaging, and piezoelectric sensing as structural health monitoring techniques. Furthermore, this article provides a comparison of the sensing results of these different structural health monitoring approaches to detect the defects and track the resultant damage from the initial fatigue cycle to final failure.« less

    1. Weld defect distributions in offshore structures and their influence on structural reliability

      SciTech Connect (OSTI)

      Rogerson, J.H.; Wong, W.K.

      1982-01-01

      Failure by fracture is a serious possible fracture mode of steel offshore structures particularly in hostile, low-temperature environments. Such fracture usually initiates from flaws in regions of stress concentration. For any probabilistic failure analysis to be credible, it is necessary to have a good estimate of the flaw size and distribution. For fixed steel platforms the important flaw size distribution is the distribution of defect height in welds in node connections. Previous work has shown that different structures have similar defect distributions which suggests that a function can be derived for the generality of such structures. Data has been analyzed relating to > 1000 m of weld in one North Sea structure. From this can be seen that a Weibull distribution is the appropriate function to use for defect height. Conclusions also are drawn about the required reliability of even an imperfect inspection and repair technique to significantly reduce failure probability.

    2. Influence of chemical disorder on energy dissipation and defect evolution in concentrated solid solution alloys

      SciTech Connect (OSTI)

      Zhang, Yanwen; Stocks, George Malcolm; Jin, Ke; Lu, Chenyang; Bei, Hongbin; Sales, Brian C.; Wang, Lumin; Béland, Laurent K.; Stoller, Roger E.; Samolyuk, German D.; Caro, Magdalena; Caro, Alfredo; Weber, William J.

      2015-10-28

      A long-standing objective in materials research is to understand how energy is dissipated in both the electronic and atomic subsystems in irradiated materials, and how related non-equilibrium processes may affect defect dynamics and microstructure evolution. Here we show that alloy complexity in concentrated solid solution alloys having both an increasing number of principal elements and altered concentrations of specific elements can lead to substantial reduction in the electron mean free path and thermal conductivity, which has a significant impact on energy dissipation and consequentially on defect evolution during ion irradiation. Enhanced radiation resistance with increasing complexity from pure nickel to binary and to more complex quaternary solid solutions is observed under ion irradiation up to an average damage level of 1 displacement per atom. Understanding how materials properties can be tailored by alloy complexity and their influence on defect dynamics may pave the way for new principles for the design of radiation tolerant structural alloys.

    3. Inspection and monitoring of wind turbine blade-embedded wave defects during fatigue testing

      SciTech Connect (OSTI)

      Niezrecki, Christopher; Avitabile, Peter; Chen, Julie; Sherwood, James; Lundstrom, Troy; LeBlanc, Bruce; Hughes, Scott; Desmond, Michael; Beattie, Alan; Rumsey, Mark; Klute, Sandra M.; Pedrazzani, Renee; Werlink, Rudy; Newman, John

      2014-05-20

      The research we present in this article focuses on a 9-m CX-100 wind turbine blade, designed by a team led by Sandia National Laboratories and manufactured by TPI Composites Inc. The key difference between the 9-m blade and baseline CX-100 blades is that this blade contains fabric wave defects of controlled geometry inserted at specified locations along the blade length. The defect blade was tested at the National Wind Technology Center at the National Renewable Energy Laboratory using a schedule of cycles at increasing load level until failure was detected. Our researchers used digital image correlation, shearography, acoustic emission, fiber-optic strain sensing, thermal imaging, and piezoelectric sensing as structural health monitoring techniques. Furthermore, this article provides a comparison of the sensing results of these different structural health monitoring approaches to detect the defects and track the resultant damage from the initial fatigue cycle to final failure.

    4. Effects of graphene defect on electronic structures of its interface with organic semiconductor

      SciTech Connect (OSTI)

      Yang, Qing-Dan; Wang, Chundong; Mo, Hin-Wai; Lo, Ming-Fai; Yuen, Muk Fung; Ng, Tsz-Wai E-mail: apcslee@cityu.edu.hk; Zhang, Wen-Jun; Lee, Chun-Sing E-mail: apcslee@cityu.edu.hk; Dou, Wei-Dong; Tsang, Sai-Wing

      2015-03-30

      Electronic structures of copper hexadecafluorophthalocyanine (F{sub 16}CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H{sub 2} plasma treatment. By increasing the treatment time of H{sub 2} plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F{sub 16}CuPc/graphene interface are significantly reduced from 0.86 to 0.56?eV and 0.71 to 0.29?eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.

    5. KINETIC MONTE CARLO SIMULATIONS OF THE EFFECTS OF 1-D DEFECT TRANSPORT ON DEFECT REACTION KINETICS AND VOID LATTICE FORMATION DURING IRRADIATION

      SciTech Connect (OSTI)

      Heinisch, Howard L.; Singh, Bachu N.

      2003-03-01

      Within the last decade molecular dynamics simulations of displacement cascades have revealed that glissile clusters of self-interstitial crowdions are formed directly in cascades. Also, under various conditions, a crowdion cluster can change its Burgers vector and glide along a different close-packed direction. In order to incorporate the migration properties of crowdion clusters into analytical rate theory models, it is necessary to describe the reaction kinetics of defects that migrate one-dimensionally with occasional changes in their Burgers vector. To meet this requirement, atomic-scale kinetic Monte Carlo (KMC) simulations have been used to study the defect reaction kinetics of one-dimensionally migrating crowdion clusters as a function of the frequency of direction changes, specifically to determine the sink strengths for such one-dimensionally migrating defects. The KMC experiments are used to guide the development of analytical expressions for use in reaction rate theories and especially to test their validity. Excellent agreement is found between the results of KMC experiments and the analytical expressions derived for the transition from one-dimensional to three-dimensional reaction kinetics. Furthermore, KMC simulations have been performed to investigate the significant role of crowdion clusters in the formation and stability of void lattices. The necessity for both one-dimensional migration and Burgers vectors changes for achieving a stable void lattice is demonstrated.

    6. Estimate of the allowable dimensions of diagnosed defects in category III and IV welded pipeline joints{sup 1}

      SciTech Connect (OSTI)

      Grin', E. A.; Bochkarev, V. I.

      2013-01-15

      An approach for estimating the permissible dimensions of technological defects in butt welded joints in category III and IV pipelines is described. The allowable size of a welding defect is determined from the condition of compliance with the specifications on strength for a reference cross section (damaged joint) of the pipeline taking into account its weakening by a given defect.With regard to the fairly widespread discovery of technological defects in butt welded joints during diagnostics of auxiliary pipelines for thermal electric power plants, the proposed approach can be used in practice by repair and consulting organizations.

    7. The effect of magnetic field on bistability in 1D photonic crystal doped by magnetized plasma and coupled nonlinear defects

      SciTech Connect (OSTI)

      Mehdian, H.; Mohammadzahery, Z.; Hasanbeigi, A. [Department of Physics and Institute for Plasma Research, Kharazmi University, 49 Dr Mofatteh Avenue, Tehran 15614 (Iran, Islamic Republic of)] [Department of Physics and Institute for Plasma Research, Kharazmi University, 49 Dr Mofatteh Avenue, Tehran 15614 (Iran, Islamic Republic of)

      2014-01-15

      In this work, we study the defect mode and bistability behavior of 1-D photonic band gap structure with magnetized plasma and coupled nonlinear defects. The transfer matrix method has been employed to investigate the magnetic field effect on defect mode frequency and bistability threshold. The obtained results show that the frequency of defect mode and bistability threshold can be altered, without changing the structure of the photonic multilayer. Therefore, the bistability behavior of the subjected structure in the presence of magnetized plasma can be utilized in manufacturing wide frequency range devices.

    8. The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities

      SciTech Connect (OSTI)

      Simmons, Jay G.; Liu, Jie; Foreman, John V.; Everitt, Henry O.

      2013-11-11

      The quantum efficiencies of both the band edge and deep-level defect emission from annealed ZnO powders were measured as a function of excitation fluence and wavelength from a tunable sub-picosecond source. A simple model of excitonic decay reproduces the observed excitation dependence of rate constants and associated trap densities for all radiative and nonradiative processes. The analysis explores how phosphor performance deteriorates as excitation fluence and energy increase, provides an all-optical approach for estimating the number density of defects responsible for deep-level emission, and yields new insights for designing efficient ZnO-based phosphors.

    9. Apodized structures for the integration of defect sites into photonic lattices

      SciTech Connect (OSTI)

      Boguslawski, Martin Kelberer, Andreas; Rose, Patrick; Denz, Cornelia

      2014-09-15

      We introduce a versatile concept to optically induce photonic structures of local refractive index modulations as well as photonic lattices holding single defect sites. For a given structure, we develop a set of nondiffracting beams obtained by fractionalizing the corresponding spatial spectrum. By combining this set in a multiplexing procedure, we achieve an incoherent combination of all individual structures of the set resulting in a locally addressable refractive index manipulation. We exemplarily present experimental results for apodized, meaning locally confined index changes in a photorefractive crystal resembling a sixfold and a circular symmetric structure. By an additional multiplexing step, we furthermore create periodic photonic lattices featuring embedded defects.

    10. STM Images of Atomic-Scale Carbon Nanotube Defects Produced by Ar+ Irradiation

      SciTech Connect (OSTI)

      Osvath, Z.; Vertesy, G.; Tapaszto, L.; Weber, F.; Horvath, Z.E.; Gyulai, J.; Biro, L.P.

      2005-09-27

      Multi-wall carbon nanotubes (MWCNTs) dispersed on graphite (HOPG) substrate were irradiated with Ar+ ions of 30 keV, using a low-dose of D 5x1011 ions/cm2. The irradiated samples were investigated by scanning tunneling microscopy (STM) under ambient conditions. Atomic resolution STM images reveal individual nanotube defects, which appear as hillocks of 1-2 angstroms in height, due to the locally changed electronic structure. After annealing at 450 deg. C in nitrogen atmosphere, the irradiated MWCNTs were investigated again by STM. The effect of the heat treatment on the irradiation-induced nanotube defects is also discussed.

    11. Role of point defects in the photosensitivity of hydrogen-loaded phosphosilicate glass

      SciTech Connect (OSTI)

      Larionov, Yu V

      2010-08-03

      It is shown that point defect modifications in hydrogen-loaded phosphosilicate glass (PSG) do not play a central role in determining its photosensitivity. Photochemical reactions that involve a two-step point defect modification and pre-exposure effect are incapable of accounting for photoinduced refractive index changes. It seems likely that a key role in UV-induced refractive index modifications is played by structural changes in the PSG network. Experimental data are presented that demonstrate intricate network rearrangement dynamics during UV exposure of PSG. (fiber optics)

    12. Joint Summer School on "The Evolution and Impact of Microstructural Defects

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      on In-Reactor Material Response" | U.S. DOE Office of Science (SC) Joint Summer School on "The Evolution and Impact of Microstructural Defects on In-Reactor Material Response" Energy Frontier Research Centers (EFRCs) EFRCs Home Centers Research Science Highlights News & Events EFRC News EFRC Events DOE Announcements Publications History Contact BES Home 11.08.10 Joint Summer School on "The Evolution and Impact of Microstructural Defects on In-Reactor Material

    13. Electrochemical impedance spectroscopy system and methods for determining spatial locations of defects

      DOE Patents [OSTI]

      Glenn, David F.; Matthern, Gretchen E.; Propp, W. Alan; Glenn, Anne W.; Shaw, Peter G.

      2006-08-08

      A method and apparatus for determining spatial locations of defects in a material are described. The method includes providing a plurality of electrodes in contact with a material, applying a sinusoidal voltage to a select number of the electrodes at a predetermined frequency, determining gain and phase angle measurements at other of the electrodes in response to applying the sinusoidal voltage to the select number of electrodes, determining impedance values from the gain and phase angle measurements, computing an impedance spectrum for an area of the material from the determined impedance values, and comparing the computed impedance spectrum with a known impedance spectrum to identify spatial locations of defects in the material.

    14. Investigation of defect-induced abnormal body current in fin field-effect-transistors

      SciTech Connect (OSTI)

      Liu, Kuan-Ju; Tsai, Jyun-Yu; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Yang, Ren-Ya; Cheng, Osbert; Huang, Cheng-Tung

      2015-08-24

      This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

    15. Atomic configuration of irradiation-induced planar defects in 3C-SiC

      SciTech Connect (OSTI)

      Lin, Y. R. [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); National Synchrotron Radiation Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan (China); Ho, C. Y. [Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Hsieh, C. Y.; Chang, M. T.; Lo, S. C. [Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Chen, F. R. [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Kai, J. J., E-mail: ceer0001@gmail.com [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China)

      2014-03-24

      The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

    16. Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation

      SciTech Connect (OSTI)

      Fukata, N.; Chen, J.; Sekiguchi, T.; Matsushita, S.; Oshima, T.; Uchida, N.; Murakami, K.; Tsurui, T.; Ito, S.

      2007-04-09

      Phosphorus (P) doping was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. At least three types of signals were observed by electron spin resonance (ESR) at 4.2 K. Phosphorus doping into substitutional sites of crystalline Si in SiNWs was demonstrated by the detection of an ESR signal with a g value of 1.998, which corresponds to conduction electrons in crystalline Si, and by an energy-dispersive x-ray spectroscopy spectrum of the P K{alpha} line. The ESR results also revealed the presence of defects. These defects were partially passivated by hydrogen and oxygen atoms.

    17. maneuvering and seakeeping (MASK) basin

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      managing the stockpile NNSA Releases Annual Stockpile Stewardship & Management Plan Annual Report Provides Insight into Vital National Security Programs WASHINGTON, DC - The Department of Energy's National Nuclear Security Administration (NNSA) has released its Fiscal Year 2016 Stockpile Stewardship and Management Plan (SSMP). The FY16 SSMP documents NNSA's 25-year strategic plan... Law Enforcement & Emergency Management Liaison Mission StatementThe Office of Secure Transportation (OST)

    18. NREL Develops High-Speed Scanner to Monitor Fuel Cell Material Defects

      SciTech Connect (OSTI)

      2015-09-01

      This highlight describes results of recent work in which polymer electrolyte membrane fuel cell electrodes with intentionally introduced known defects were imaged and analyzed using a fuel cell scanner recently developed at NREL. The highlight is being developed for the September 2015 Alliance S&T Board meeting.

    19. Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures

      SciTech Connect (OSTI)

      Zhang, Minghuan; Cai, Rongsheng; Zhang, Yujuan; Wang, Chao; Wang, Yiqian; Ross, Guy G.; Barba, David

      2014-07-01

      Ge nanocrystals (Ge-ncs) were produced by implantation of {sup 74}Ge{sup +} into a SiO{sub 2} film on (100) Si, followed by high-temperature annealing from 700 °C to 1100 °C. Transmission electron microscopy (TEM) studies show that the average size of Ge-ncs increases with the annealing temperature. High-resolution TEM (HRTEM) investigations reveal the presence of planar and linear defects in the formed Ge-ncs, whose relative concentrations are determined at each annealing temperature. The relative concentration of planar defects is almost independent of the annealing temperature up to 1000 °C. However, from 1000 °C to 1100 °C, its concentration decreases dramatically. For the linear defects, their concentration varies considerably with the annealing temperatures. In addition, by measuring the interplanar spacing of Ge-ncs from the HRTEM images, a strong correlation is found between the dislocation percentage and the stress field intensity. Our results provide fundamental insights regarding both the presence of microstructural defects and the origin of the residual stress field within Ge-ncs, which can shed light on the fabrication of Ge-ncs with quantified crystallinity and appropriate size for the advanced Ge-nc devices. - Highlights: • Growth of Ge nanocrystals at different annealing temperatures was investigated. • Strain field has great effects on the formation of dislocations. • Different mechanisms are proposed to explain growth regimes of Ge nanocrystals.

    20. A study of the mechanism of laser welding defects in low thermal expansion superalloy GH909

      SciTech Connect (OSTI)

      Yan, Fei; Wang, Chunming, E-mail: yanxiangfei225@163.com; Wang, Yajun; Hu, Xiyuan; Wang, Tianjiao; Li, Jianmin; Li, Guozhu

      2013-04-15

      In this paper, we describe experimental laser welding of low-thermal-expansion superalloy GH909. The main welding defects of GH909 by laser in the weld are liquation cracks and porosities, including hydrogen and carbon monoxide porosity. The forming mechanism of laser welding defects was investigated. This investigation was conducted using an optical microscope, scanning electron microscope, energy diffraction spectrum, X-ray diffractometer and other methodologies. The results demonstrated that porosities appearing in the central weld were related to incomplete removal of oxide film on the surface of the welding samples. The porosities produced by these bubbles were formed as a result of residual hydrogen or oxygenium in the weld. These elements failed to escape from the weld since laser welding has both a rapid welding speed and cooling rate. The emerging crack in the heat affected zone is a liquation crack and extends along the grain boundary as a result of composition segregation. LavesNi{sub 2}Ti phase with low melting point is a harmful phase, and the stress causes grain boundaries to liquefy, migrate and even crack. Removing the oxides on the surface of the samples before welding and carefully controlling technological parameters can reduce welding defects and improve formation of the GH909 alloy weld. - Highlights: ? It is a new process for the forming of GH909 alloy via laser welding. ? The forming mechanism of laser welding defects in GH909 has been studied. ? It may be a means to improve the efficiency of aircraft engine production.

    1. Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Ye, Gonglan; Gong, Yongji; Lin, Junhao; Li, Bo; He, Yongmin; Pantelides, Sokrates T.; Zhou, Wu; Vajtai, Robert; Ajayan, Pulickel M.

      2016-01-13

      MoS2 is a promising, low-cost material for electrochemical hydrogen production due to its high activity and stability during the reaction. Our work represents an easy method to increase the hydrogen production in electrochemical reaction of MoS2 via defect engineering, and helps to understand the catalytic properties of MoS2.

    2. Back-side hydrogenation technique for defect passivation in silicon solar cells

      DOE Patents [OSTI]

      Sopori, B.L.

      1994-04-19

      A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts. 3 figures.

    3. Salvaged castings and methods of salvaging castings with defective cast cooling bumps

      DOE Patents [OSTI]

      Johnson, Robert Alan; Schaeffer, Jon Conrad; Lee, Ching-Pang; Abuaf, Nesim; Hasz, Wayne Charles

      2002-01-01

      Castings for gas turbine parts exposed on one side to a high-temperature fluid medium have cast-in bumps on an opposite cooling surface side to enhance heat transfer. Areas on the cooling surface having defectively cast bumps, i.e., missing or partially formed bumps during casting, are coated with a braze alloy and cooling enhancement material to salvage the part.

    4. On the structural defects in synthetic {gamma}-MnO{sub 2}s

      SciTech Connect (OSTI)

      Hill, L.I.; Verbaere, A. . E-mail: alain.verbaere@cnrs-imn.fr

      2004-12-01

      In the literature, the {gamma}-MnO{sub 2} structure is considered to be that of ramsdellite (R), in which two types of defects exist. The occurrence of a slab of pyrolusite (r) is named a De Wolff defect and random faults r in R give intergrowths of ramsdellite and pyrolusite, which account well for the global features of many experimental diffraction patterns. The other type of defect results from 'microtwinning', which allows the so-called {epsilon}-MnO{sub 2} to be put with {gamma}-MnO{sub 2} in the same classification. This paper discusses the previous models of defect and what could be the features of the 'microtwinning', giving for each possible model the corresponding expected features in reciprocal space. The results of a selected area electron diffraction study of rather well crystallized samples of {gamma}-MnO{sub 2} are presented. The splitting of particular diffraction spots and new diffuse intensity are interpreted as the first experimental evidence for 'microtwinning', and a model with orientation variants within microdomains embedded in a 'normal' structure is proposed, which is rather different from the previous hypotheses involving parallel twin planes and parallel twin boundaries.

    5. Back-side hydrogenation technique for defect passivation in silicon solar cells

      DOE Patents [OSTI]

      Sopori, Bhushan L.

      1994-01-01

      A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.

    6. Defect-enhanced void filling and novel filled phases of open-structure skutterudites

      SciTech Connect (OSTI)

      Xi, Lili; Qiu, Yuting; Zhang, Wenqing; Chen, Lidong; Singh, David J.; Yang, Jihui

      2015-05-14

      Here, we report the design of novel filled CoSb3 skutterudite phases based on a combination of filling and Sb-substituted Ga/In defects. Ga/In doped skutterudite phases with Li-, Nd-, and Sm-fillings can be formed via this strategy, which can have relatively wider ranges of carrier concentration than other conventional filled skutterudite phases.

    7. Specific features of defect and mass transport in concentrated fcc alloys

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Osetsky, Yuri N.; Béland, Laurent K.; Stoller, Roger E.

      2016-06-15

      We report that diffusion and mass transport are basic properties that control materials performance, such as phase stability, solute decomposition and radiation tolerance. While understanding diffusion in dilute alloys is a mature field, concentrated alloys are much less studied. Here, atomic-scale diffusion and mass transport via vacancies and interstitial atoms are compared in fcc Ni, Fe and equiatomic Ni-Fe alloy. High temperature properties were determined using conventional molecular dynamics on the microsecond timescale, whereas the kinetic activation-relaxation (k-ART) approach was applied at low temperatures. The k-ART was also used to calculate transition states in the alloy and defect transport coefficients.more » The calculations reveal several specific features. For example, vacancy and interstitial defects migrate via different alloy components, diffusion is more sluggish in the alloy and, notably, mass transport in the concentrated alloy cannot be predicted on the basis of diffusion in its pure metal counterparts. Lastly, the percolation threshold for the defect diffusion in the alloy is discussed and it is suggested that this phenomenon depends on the properties and diffusion mechanisms of specific defects.« less

    8. Influence of gadolinium doping on the structure and defects of ceria under fuel cell operating temperature

      SciTech Connect (OSTI)

      Acharya, S. A. Gaikwad, V. M.; Sathe, V.; Kulkarni, S. K.

      2014-03-17

      Correlation between atomic positional shift, oxygen vacancy defects, and oxide ion conductivity in doped ceria system has been established in the gadolinium doped ceria system from X-ray diffraction (XRD) and Raman spectroscopy study at operating temperature (300600?C) of Intermediate Temperature Solid Oxide Fuel Cell (IT-SOFC). High temperature XRD data are used to quantify atomic positional shift from mean position with temperature. The Raman spectroscopy study shows additional vibration modes related to ordering of defect spaces (Gd{sub Ce}{sup ?}?V{sub o}{sup }){sup *} and (2Gd{sub Ce}{sup ?}?V{sub o}{sup }){sup x} generated due to association of oxygen vacancies and reduced cerium or dopant cations site (Gd{sup 3+}), which disappear at 450?C; indicating oxygen vacancies dissociation from the defect complex. The experimental evidences of cation-anion positional shifting and oxygen vacancies dissociation from defect complex in the IT-SOFC operating temperature are discussed to correlate with activation energy for ionic conductivity.

    9. Mapping hidden aircraft defects with dual-band infrared computed tomography

      SciTech Connect (OSTI)

      Del Grande, N.K.; Durbin, P.F.

      1995-04-03

      Infrared computed tomography (IRCT) is a promising, non-contact, nondestructive evaluation tool used to inspect the mechanical integrity of large structures. We describe on-site, proof-of-principle demonstrations of IRCt to inspect defective metallic and composite structures. The IRCT system captures time sequences of heat-stimulated, dual-band infrared (DBIR) thermal maps for flash-heated and naturally-heated targets. Our VIEW algorithms produce co-registered thermal, thermal inertia, and thermal-timegram maps from which we quantify the percent metal-loss corrosion damage for airframes and the defect sites, depths, and host-material physical properties for composite structures. The IRCT method clarifies the type of defect, e.g., corrosion, fabrication, foreign-material insert, delamination, unbond, void, and quantifies the amount of damage from the defect, e.g., the percent metal-loss from corrosion in metal structures, the depth, thickness, and areal extent of heat damage in multi-layered composite materials. Potential long-term benefits of IRCT technology are in-service monitoring of incipient corrosion damage, to avoid catastrophic failure and production-monitoring of cure states for composite materials.

    10. Wind turbine composite blade manufacturing : the need for understanding defect origins, prevalence, implications and reliability.

      SciTech Connect (OSTI)

      Cairns, Douglas S.; Riddle, Trey; Nelson, Jared

      2011-02-01

      Renewable energy is an important element in the US strategy for mitigating our dependence on non-domestic oil. Wind energy has emerged as a viable and commercially successful renewable energy source. This is the impetus for the 20% wind energy by 2030 initiative in the US. Furthermore, wind energy is important on to enable a global economy. This is the impetus for such rapid, recent growth. Wind turbine blades are a major structural element of a wind turbine blade. Wind turbine blades have near aerospace quality demands at commodity prices; often two orders of magnitude less cost than a comparable aerospace structure. Blade failures are currently as the second most critical concern for wind turbine reliability. Early blade failures typically occur at manufacturing defects. There is a need to understand how to quantify, disposition, and mitigate manufacturing defects to protect the current wind turbine fleet, and for the future. This report is an overview of the needs, approaches, and strategies for addressing the effect of defects in wind turbine blades. The overall goal is to provide the wind turbine industry with a hierarchical procedure for addressing blade manufacturing defects relative to wind turbine reliability.

    11. Defect-enhanced void filling and novel filled phases of open-structure skutterudites

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Xi, Lili; Qiu, Yuting; Zhang, Wenqing; Chen, Lidong; Singh, David J.; Yang, Jihui

      2015-05-14

      Here, we report the design of novel filled CoSb3 skutterudite phases based on a combination of filling and Sb-substituted Ga/In defects. Ga/In doped skutterudite phases with Li-, Nd-, and Sm-fillings can be formed via this strategy, which can have relatively wider ranges of carrier concentration than other conventional filled skutterudite phases.

    12. Radionuclide release from PWR spent fuel specimens with induced cladding defects

      SciTech Connect (OSTI)

      Wilson, C.N.; Oversby, V.M.

      1984-03-01

      Radionuclide releases from pressurized water reactor (PWR) spent fuel rod specimens containing various artificially induced cladding defects were compared by leach testing. The study was conducted in support of the Nevada Nuclear Waste Storage Investigations (NNWSI) Waste Package Task to evaluate the effectiveness of failed cladding as a barrier to radionuclide release. Test description and results are presented. 6 references, 4 figures.

    13. Radionuclide release from PWR spent fuel specimens with induced cladding defects

      SciTech Connect (OSTI)

      Wilson, C.N.; Oversby, V.M.

      1984-03-01

      Radionuclide releases from pressurized water reactor (PWR) spent fuel rod specimens containing various artificially induced cladding defects were compared by leach testing. The study was conducted in support of the Nevada Nuclear Waste Storage Investigations (NNWSI) Waste Package Task to evaluate the effectiveness of failed cladding as a barrier to radionuclide release. Test description and results are presented.

    14. Electrostatic particle trap for ion beam sputter deposition

      DOE Patents [OSTI]

      Vernon, Stephen P.; Burkhart, Scott C.

      2002-01-01

      A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

    15. A theoretical study of the stability of anionic defects in cubic ZrO2 at extreme conditions

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Samanta, Amit

      2016-02-19

      Using first principles density functional theory calculations, we present a study of the structure, mobility, and the thermodynamic stability of anionic defects in the high-temperature cubic phase of ZrO2. Our results suggest that the local structure of an oxygen interstitial depends on the charge state and the cubic symmetry of the anionic sublattice is unstable at 0 K. In addition, the oxygen interstitials and the vacancies exhibit symmetry breaking transitions to low-energy structures with tetragonal distortion of the oxygen sublattice at 0 K. However, the vibrational entropy stabilizes the defect structures with cubic symmetry at 2600–2980 K. The formation freemore » energies of the anionic defects and Gibbs free energy changes associated with different defect reactions are calculated by including the vibrational free energy contributions and the effect of pressure on these defect structures. By analyzing the defect chemistry, we obtain the defect concentrations at finite temperature and pressure conditions using the zero temperature ab initio results as input and find that at low oxygen partial pressures, neutral oxygen vacancies are most dominant and at high oxygen partial pressures, doubly charged anionic defects are dominant. As a result, the relevance of the results to the thermal protective coating capabilities of zirconium-based ceramic composites is elucidated.« less

    16. Defect evolution in single crystalline tungsten following low temperature and low dose neutron irradiation

      SciTech Connect (OSTI)

      Hu, Xunxiang; Koyanagi, Takaaki; Fukuda, Makoto; Katoh, Yutai; Wirth, Brian D; Snead, Lance Lewis

      2016-01-01

      The tungsten plasma-facing components of fusion reactors will experience an extreme environment including high temperature, intense particle fluxes of gas atoms, high-energy neutron irradiation, and significant cyclic stress loading. Irradiation-induced defect accumulation resulting in severe thermo-mechanical property degradation is expected. For this reason, and because of the lack of relevant fusion neutron sources, the fundamentals of tungsten radiation damage must be understood through coordinated mixed-spectrum fission reactor irradiation experiments and modeling. In this study, high-purity (110) single-crystal tungsten was examined by positron annihilation spectroscopy and transmission electron microscopy following low-temperature (~90 °C) and low-dose (0.006 and 0.03 dpa) mixed-spectrum neutron irradiation and subsequent isochronal annealing at 400, 500, 650, 800, 1000, 1150, and 1300 °C. The results provide insights into microstructural and defect evolution, thus identifying the mechanisms of different annealing behavior. Following 1 h annealing, ex situ characterization of vacancy defects using positron lifetime spectroscopy and coincidence Doppler broadening was performed. The vacancy cluster size distributions indicated intense vacancy clustering at 400 °C with significant damage recovery around 1000 °C. Coincidence Doppler broadening measurements confirm the trend of the vacancy defect evolution, and the S–W plots indicate that only a single type of vacancy cluster is present. Furthermore, transmission electron microscopy observations at selected annealing conditions provide supplemental information on dislocation loop populations and visible void formation. This microstructural information is consistent with the measured irradiation-induced hardening at each annealing stage. This provides insight into tungsten hardening and embrittlement due to irradiation-induced matrix defects.

    17. Defect evolution in single crystalline tungsten following low temperature and low dose neutron irradiation

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Hu, Xunxiang; Koyanagi, Takaaki; Fukuda, Makoto; Katoh, Yutai; Wirth, Brian D; Snead, Lance Lewis

      2016-01-01

      The tungsten plasma-facing components of fusion reactors will experience an extreme environment including high temperature, intense particle fluxes of gas atoms, high-energy neutron irradiation, and significant cyclic stress loading. Irradiation-induced defect accumulation resulting in severe thermo-mechanical property degradation is expected. For this reason, and because of the lack of relevant fusion neutron sources, the fundamentals of tungsten radiation damage must be understood through coordinated mixed-spectrum fission reactor irradiation experiments and modeling. In this study, high-purity (110) single-crystal tungsten was examined by positron annihilation spectroscopy and transmission electron microscopy following low-temperature (~90 °C) and low-dose (0.006 and 0.03 dpa) mixed-spectrum neutronmore » irradiation and subsequent isochronal annealing at 400, 500, 650, 800, 1000, 1150, and 1300 °C. The results provide insights into microstructural and defect evolution, thus identifying the mechanisms of different annealing behavior. Following 1 h annealing, ex situ characterization of vacancy defects using positron lifetime spectroscopy and coincidence Doppler broadening was performed. The vacancy cluster size distributions indicated intense vacancy clustering at 400 °C with significant damage recovery around 1000 °C. Coincidence Doppler broadening measurements confirm the trend of the vacancy defect evolution, and the S–W plots indicate that only a single type of vacancy cluster is present. Furthermore, transmission electron microscopy observations at selected annealing conditions provide supplemental information on dislocation loop populations and visible void formation. This microstructural information is consistent with the measured irradiation-induced hardening at each annealing stage. This provides insight into tungsten hardening and embrittlement due to irradiation-induced matrix defects.« less

    18. In-Process Detection of Weld Defects Using Laser-Based Ultrasonic Lamb Waves

      SciTech Connect (OSTI)

      Kercel, S W

      2001-01-04

      Laser-based ultrasonic (LBU) measurement shows great promise for on-line monitoring of weld quality in tailor-welded blanks. Tailor-welded blanks are steel blanks made from plates of differing thickness and/or properties butt-welded together; they are used in automobile manufacturing to produce body, frame, and closure panels. LBU uses a pulsed laser to generate the ultrasound and a continuous wave (CW) laser interferometer to detect the ultrasound at the point of interrogation to perform ultrasonic inspection. LBU enables in-process measurements since there is no sensor contact or near-contact with the workpiece. The authors have used laser-generated plate (Lamb) waves to propagate from one plate into the weld nugget as a means of detecting defects. This report recounts an investigation of a number of inspection architectures based on processing of signals from selected plate waves, which are either reflected from or transmitted through the weld zone. Bayesian parameter estimation and wavelet analysis (both continuous and discrete) have shown that the LBU time-series signal is readily separable into components that provide distinguishing features, which describe weld quality. The authors anticipate that, in an on-line industrial application, these measurements can be implemented just downstream from the weld cell. Then the weld quality data can be fed back to control critical weld parameters or alert the operator of a problem requiring maintenance. Internal weld defects and deviations from the desired surface profile can then be corrected before defective parts are produced. The major conclusions of this study are as follows. Bayesian parameter estimation is able to separate entangled Lamb wave modes. Pattern recognition algorithms applied to Lamb mode features have produced robust features for distinguishing between several types of weld defects. In other words, the information is present in the output of the laser ultrasonic hardware, and it is feasible to

    19. Intrinsic and extrinsic defects in a family of coal-derived graphene quantum dots

      SciTech Connect (OSTI)

      Singamaneni, Srinivasa Rao E-mail: tour@rice.edu; Tol, Johan van; Ye, Ruquan; Tour, James M. E-mail: tour@rice.edu

      2015-11-23

      In this letter, we report on the high frequency (239.2 and 336 GHz) electron spin resonance (ESR) studies performed on graphene quantum dots (GQDs), prepared through a wet chemistry route from three types of coal: (a) bituminous, (b) anthracite, and (c) coke; and from non-coal derived GQDs. The microwave frequency-, power-, and temperature-dependent ESR spectra coupled with computer-aided simulations reveal four distinct magnetic defect centers. In bituminous- and anthracite-derived GQDs, we have identified two of them as intrinsic carbon-centered magnetic defect centers (a broad signal of peak to peak width = 697 (10{sup −4} T), g = 2.0023; and a narrow signal of peak to peak width = 60 (10{sup −4} T), g = 2.003). The third defect center is Mn{sup 2+} ({sup 6}S{sub 5/2}, 3d{sup 5}) (signal width = 61 (10{sup −4} T), g = 2.0023, A{sub iso} = 93(10{sup −4} T)), and the fourth defect is identified as Cu{sup 2+} ({sup 2}D{sub 5/2}, 3d{sup 9}) (g{sub ⊥} = 2.048 and g{sub ‖} = 2.279), previously undetected. Coke-derived and non-coal derived GQDs show Mn{sup 2+} and two-carbon related signals, and no Cu{sup 2+} signal. The extrinsic impurities most likely originate from the starting coal. Furthermore, Raman, photoluminescence, and ESR measurements detected no noticeable changes in the properties of the bituminous GQDs after one year. This study highlights the importance of employing high frequency ESR spectroscopy in identifying the (magnetic) defects, which are roadblocks for spin relaxation times of graphene-based materials. These defects would not have been possible to probe by other spin transport measurements.

    20. Investigation of intrinsic and extrinsic defects effective role on producing intense red emission in ZnO:Eu nanostructures

      SciTech Connect (OSTI)

      Najafi, Mehrdad Haratizadeh, Hamid

      2015-05-15

      Highlights: • Effective role of defects on producing red emission at indirect excitation. • V{sub Zn} and V{sub O} defects have important role on energy transfer. • Mg related defects and Zn{sub i} defects were responsible for blue emission. • Extrinsic and intrinsic defects mediated energy transfer to sensitize Eu{sup 3+} ions. • Decrease of red emission because of diminishing in oxygen vacancy. - Abstract: Europium doped ZnO nanorads and nanosheets were synthesized by hydrothermal method. Effects of Mg doping, morphology and annealing in oxygen ambient on structural and optical properties of ZnO nanostructures were investigated using X-ray diffraction (XRD), particle size analysis (PSA), thermo gravimetric analysis (TGA), differential thermal analysis (DTA), differential thermo gravimetry (DTG), scanning electron microscopy (SEM) and photoluminescence spectroscopy (PL). This study recommends that both of intrinsic and extrinsic defects facilitate energy transfer (ET) from the ZnO host to Eu{sup 3+} ions and consequently have efficient role on producing intense red emission at indirect excitation. The results also showed that annealing process improved the crystal structure of ZnO nanosheets due to decrease of surface defects; however decreased ET and red emission because of diminishing in oxygen vacancy. In addition in ZnO nanorods sample with more surface area in comparison with ZnO nanosheets sample deep level emissions are enhanced.

    1. Self-consistent simulation of CdTe solar cells with active defects

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Brinkman, Daniel; Guo, Da; Akis, Richard; Ringhofer, Christian; Sankin, Igor; Fang, Tian; Vasileska, Dragica

      2015-07-21

      We demonstrate a self-consistent numerical scheme for simulating an electronic device which contains active defects. As a specific case, we consider copper defects in cadmium telluride solar cells. The presence of copper has been shown experimentally to play a crucial role in predicting device performance. The primary source of this copper is migration away from the back contact during annealing, which likely occurs predominantly along grain boundaries. We introduce a mathematical scheme for simulating this effect in 2D and explain the numerical implementation of the system. Lastly, we will give numerical results comparing our results to known 1D simulations tomore » demonstrate the accuracy of the solver and then show results unique to the 2D case.« less

    2. Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

      SciTech Connect (OSTI)

      Alimardani, Nasir; Conley, John F.

      2014-08-25

      Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta{sub 2}O{sub 5} via defect based conduction before tunneling directly through the Al{sub 2}O{sub 3}, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature.

    3. Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Koyanagi, T.; Lance, M. J.; Katoh, Y.

      2016-08-11

      Raman spectra from polycrystalline beta-silicon carbide (SiC) were collected following neutron irradiation at 380–1180 °C to 0.011–1.87 displacement per atom. The longitudinal optical (LO) peak shifted to a lower frequency and broadened as a result of the irradiation. The changes observed in the LO phonon line shape and position in neutron-irradiated SiC are explained by a combination of changes in the lattice constant and Young's modulus, and the phonon confinement effect. The phonon confinement model reasonably estimates the defect-defect distance in the irradiated SiC, which is consistent with results from previous experimental studies and simulations.

    4. Density functional study of H-induced defects as nucleation sites in hybrid carbon nanomaterials.

      SciTech Connect (OSTI)

      Barnard, A.; Terranova, M. L.; Rossi, M.; Dip. Scienze e Tecnologie Chimiche; Dip di Energetica; INFM

      2005-01-01

      Recently we have reported on the growth of an exciting new class of hybrid nanostructured carbon materials, coupling nanosized diamond with single-walled carbon nanotubes. The inner structures were shown to be single-walled C nanotubes or bundles of single-walled nanotubes up to 15 {micro}m long, and the outer deposit consisted of faceted diamond crystallites with diameters in the range of 20-100 nm. To aid in understanding the mechanisms responsible for the formation of such materials, the present study uses density functional theory to examine the role of atomic hydrogen in creating localized sp{sup 3} hybridized defects on the outer wall of carbon nanotubes. The results illustrate that certain absorption configurations may produce defects containing dangling carbon bonds, and thus promote the formation of suitable sites for nanodiamond nucleation.

    5. Surface defect states in MBE-grown CdTe layers

      SciTech Connect (OSTI)

      Olender, Karolina; Wosinski, Tadeusz; Fronc, Krzysztof; Tkaczyk, Zbigniew; Chusnutdinow, Sergij; Karczewski, Grzegorz

      2014-02-21

      Semiconductor surface plays an important role in the technology of semiconductor devices. In the present work we report results of our deep-level transient spectroscopy (DLTS) investigations of surface defect states in nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. We observed a deep-level trap associated with surface states, with the activation energy for hole emission of 0.33 eV. DLTS peak position in the spectra for this trap, and its ionization energy, strongly depend on the electric field. Our measurements allow to determine a mechanism responsible for the enhancement of hole emission rate from the traps as the phonon-assisted tunnel effect. Density of surface defect states significantly decreased as a result of passivation in ammonium sulfide. Capacitance-voltage measurements confirmed the results obtained by the DLTS technique.

    6. Self-consistent simulation of CdTe solar cells with active defects

      SciTech Connect (OSTI)

      Brinkman, Daniel; Guo, Da; Akis, Richard; Ringhofer, Christian; Sankin, Igor; Fang, Tian; Vasileska, Dragica

      2015-07-21

      We demonstrate a self-consistent numerical scheme for simulating an electronic device which contains active defects. As a specific case, we consider copper defects in cadmium telluride solar cells. The presence of copper has been shown experimentally to play a crucial role in predicting device performance. The primary source of this copper is migration away from the back contact during annealing, which likely occurs predominantly along grain boundaries. We introduce a mathematical scheme for simulating this effect in 2D and explain the numerical implementation of the system. Lastly, we will give numerical results comparing our results to known 1D simulations to demonstrate the accuracy of the solver and then show results unique to the 2D case.

    7. Self-consistent simulation of CdTe solar cells with active defects

      SciTech Connect (OSTI)

      Brinkman, Daniel; Ringhofer, Christian; Guo, Da; Akis, Richard; Vasileska, Dragica; Sankin, Igor; Fang, Tian

      2015-07-21

      We demonstrate a self-consistent numerical scheme for simulating an electronic device which contains active defects. As a specific case, we consider copper defects in cadmium telluride solar cells. The presence of copper has been shown experimentally to play a crucial role in predicting device performance. The primary source of this copper is migration away from the back contact during annealing, which likely occurs predominantly along grain boundaries. We introduce a mathematical scheme for simulating this effect in 2D and explain the numerical implementation of the system. Finally, we will give numerical results comparing our results to known 1D simulations to demonstrate the accuracy of the solver and then show results unique to the 2D case.

    8. Impact of strain on electronic defects in (Mg,Zn)O thin films

      SciTech Connect (OSTI)

      Schmidt, Florian Müller, Stefan; Wenckstern, Holger von; Benndorf, Gabriele; Pickenhain, Rainer; Grundmann, Marius

      2014-09-14

      We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y₂, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3´ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.

    9. Interaction of defects and H in proton-irradiated GaN(Mg, H)

      SciTech Connect (OSTI)

      Myers, S.M.; Seager, C.H.

      2005-05-01

      Magnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of the H, and photoluminescence. The results support the annihilation of Ga Frenkel pairs near room temperature, leaving the N interstitial and N vacancy to influence the elevated-temperature behavior. Multiple changes are observed with increasing temperature, ending with thermal release of the H above 700 deg. C. These effects are interpreted in terms of a succession of complexes involving Mg, the point defects, and H.

    10. Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H).

      SciTech Connect (OSTI)

      Myers, Samuel Maxwell, Jr.; Fleming, Robert M.

      2005-06-01

      Deuterated p-type GaN(Mg,{sup 2}H) films were irradiated at room temperature with 1 MeV protons to create native point defects with a concentration approximately equal to the Mg doping (5 x 10{sup 19} cm{sup -3}). The samples were then annealed isothermally at a succession of temperatures while monitoring the infrared absorption due to the H local mode of the MgH defect. As the samples were annealed, the MgH absorption signal decreased and a new mode at slightly higher frequency appeared, which has been associated with the approach of a mobile nitrogen interstitial. We used the time dependence of the MgH absorption to obtain a diffusion barrier of the nitrogen interstitial in p-type GaN of 1.99 eV. This is in good agreement with theoretical calculations of nitrogen interstitial motion in GaN.

    11. Grinding assembly, grinding apparatus, weld joint defect repair system, and methods

      DOE Patents [OSTI]

      Larsen, Eric D.; Watkins, Arthur D.; Bitsoi, Rodney J.; Pace, David P.

      2005-09-27

      A grinding assembly for grinding a weld joint of a workpiece includes a grinder apparatus, a grinder apparatus includes a grinding wheel configured to grind the weld joint, a member configured to receive the grinding wheel, the member being configured to be removably attached to the grinder apparatus, and a sensor assembly configured to detect a contact between the grinding wheel and the workpiece. The grinding assembly also includes a processing circuitry in communication with the grinder apparatus and configured to control operations of the grinder apparatus, the processing circuitry configured to receive weld defect information of the weld joint from an inspection assembly to create a contour grinding profile to grind the weld joint in a predetermined shape based on the received weld defect information, and a manipulator having an end configured to carry the grinder apparatus, the manipulator further configured to operate in multiple dimensions.

    12. Defect-free ZnO nanorods for low temperature hydrogen sensor applications

      SciTech Connect (OSTI)

      Ranwa, Sapana; Kumar, Mahesh; Kulriya, Pawan K.; Sahu, Vikas Kumar; Kukreja, L. M.

      2014-11-24

      Uniformly distributed and defect-free vertically aligned ZnO nanorods (NRs) with high aspect ratio are deposited on Si by sputtering technique. X-ray diffraction along with transmission electron microscopy studies confirmed the single crystalline wurtzite structure of ZnO. Absence of wide band emission in photoluminescence spectra showed defect-free growth of ZnO NRs which was further conformed by diamagnetic behavior of the NRs. H{sub 2} sensing mechanism based on the change in physical dimension of channel is proposed to explain the fast response (?21.6?s) and recovery times (?27?s) of ZnO NRs/Si/ZnO NRs sensors. Proposed H{sub 2} sensor operates at low temperature (?70?C) unlike the existing high temperature (>150?C) sensors.

    13. Fission gas release from UO{sub 2+x} in defective light water reactor fuel rods

      SciTech Connect (OSTI)

      Skim, Y. S.

      1999-11-12

      A simplified semi-empirical model predicting fission gas release form UO{sub 2+x} fuel to the fuel rod plenum as a function of stoichiometry excess (x) is developed to apply to the fuel of a defective LWR fuel rod in operation. The effect of fuel oxidation in enhancing gas diffusion is included as a parabolic dependence of the stoichiometry excess. The increase of fission gas release in a defective BWR fuel rod is at the most 3 times higher than in an intact fuel rod because of small extent of UO{sub 2} oxidation. The major enhancement contributor in fission gas release of UO{sub 2+x} fuel is the increased diffusivity due to stoichiometry excess rather than the higher temperature caused by degraded fuel thermal conductivity.

    14. Electrical conductivity, Seebeck coefficient, and defect structure of Ca-doped YCrO sub 3

      SciTech Connect (OSTI)

      Carini, G.F. II.

      1990-01-01

      High temperature electrical conductivity, Seebeck coefficient, and thermogravimetric measurements were made as a function of oxygen activity to investigate the electrical transport behavior and defect structure of Ca-doped YCrO{sub 3}. Defect models were developed to correlate the electrical conductivity and thermogravimetric data by relating the concentration of charge carriers to the acceptor dopant and oxygen vacancy concentrations. These relations were found to adequately explain the experimental data. Thermodynamic properties were calculated which were consistent with the model. Calculations of the carrier concentrations, the activation energies, and the mobilities were also performed. The analysis of the electrical conductivity, Seebeck and mobility data suggested that the conduction process in Ca-doped YCrO{sub 3} occurs via the small polaron hopping mechanism. Kroger-Vink diagrams showing the regions of stability with respect to oxygen activity and temperature were constructed.

    15. Dehydrogenation of methanol to formaldehyde catalyzed by pristine and defective ceria surfaces

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Beste, Ariana; Overbury, Steven H.

      2016-03-09

      We have explored the dehydrogenation of methoxy on pristine and defective (111), (100), and (110) ceria surfaces with density functional methods. Methanol conversion is used as a probe reaction to understand structure sensitivity of the oxide catalysis. Differences in reaction selectivity have been observed experimentally as a function of crystallographically exposed faces and degree of reduction. We find that the barrier for carbon-hydrogen cleavage in methoxy is similar for the pristine and defective (111), (100), and (110) surfaces. However, there are large differences in the stability of the surface intermediates on the different surfaces. The variations in experimentally observed productmore » selectivities are a consequence of the interplay between barrier controlled bond cleavage and desorption processes. Ultimately, subtle differences in activation energies for carbon-hydrogen cleavage on the different crystallographic faces of ceria could not be correlated with structural or electronic descriptors.« less

    16. Method of detecting defects in ion exchange membranes of electrochemical cells by chemochromic sensors

      DOE Patents [OSTI]

      Brooker, Robert Paul; Mohajeri, Nahid

      2016-01-05

      A method of detecting defects in membranes such as ion exchange membranes of electrochemical cells. The electrochemical cell includes an assembly having an anode side and a cathode side with the ion exchange membrane in between. In a configuration step a chemochromic sensor is placed above the cathode and flow isolation hardware lateral to the ion exchange membrane which prevents a flow of hydrogen (H.sub.2) between the cathode and anode side. The anode side is exposed to a first reactant fluid including hydrogen. The chemochromic sensor is examined after the exposing for a color change. A color change evidences the ion exchange membrane has at least one defect that permits H.sub.2 transmission therethrough.

    17. A global conformance quality model. A new strategic tool for minimizing defects caused by variation, error, and complexity

      SciTech Connect (OSTI)

      Hinckley, C.M.

      1994-01-01

      The performance of Japanese products in the marketplace points to the dominant role of quality in product competition. Our focus is motivated by the tremendous pressure to improve conformance quality by reducing defects to previously unimaginable limits in the range of 1 to 10 parts per million. Toward this end, we have developed a new model of conformance quality that addresses each of the three principle defect sources: (1) Variation, (2) Human Error, and (3) Complexity. Although the role of variation in conformance quality is well documented, errors occur so infrequently that their significance is not well known. We have shown that statistical methods are not useful in characterizing and controlling errors, the most common source of defects. Excessive complexity is also a root source of defects, since it increases errors and variation defects. A missing link in the defining a global model has been the lack of a sound correlation between complexity and defects. We have used Design for Assembly (DFA) methods to quantify assembly complexity and have shown that assembly times can be described in terms of the Pareto distribution in a clear exception to the Central Limit Theorem. Within individual companies we have found defects to be highly correlated with DFA measures of complexity in broad studies covering tens of millions of assembly operations. Applying the global concepts, we predicted that Motorola`s Six Sigma method would only reduce defects by roughly a factor of two rather than orders of magnitude, a prediction confirmed by Motorola`s data. We have also shown that the potential defects rates of product concepts can be compared in the earliest stages of development. The global Conformance Quality Model has demonstrated that the best strategy for improvement depends upon the quality control strengths and weaknesses.

    18. Defect and damage evolution quantification in dynamically-deformed metals using orientation-imaging microscopy

      SciTech Connect (OSTI)

      Gray, George T., III; Livescu, Veronica; Cerreta, Ellen K

      2010-03-18

      Orientation-imaging microscopy offers unique capabilities to quantify the defects and damage evolution occurring in metals following dynamic and shock loading. Examples of the quantification of the types of deformation twins activated, volume fraction of twinning, and damage evolution as a function of shock loading in Ta are presented. Electron back-scatter diffraction (EBSD) examination of the damage evolution in sweeping-detonation-wave shock loading to study spallation in Cu is also presented.

    19. Turbine superalloy component defect repair with low-temperature curing resin

      SciTech Connect (OSTI)

      Hunt, David W.; Allen, David B.

      2015-09-08

      Voids, cracks or other similar defects in substrates of thermal barrier coated superalloy components, such as turbine blades or vanes, are filled with resin, without need to remove substrate material surrounding the void by grinding or other processes. The resin is cured at a temperature under 200.degree. C., eliminating the need for post void-filling heat treatment. The void-filled substrate and resin are then coated with a thermal barrier coating.

    20. Nondestructive method for detecting defects in photodetector and solar cell devices

      DOE Patents [OSTI]

      Sawyer, David E.

      1981-01-01

      The invention described herein is a method for locating semiconductor device defects and for measuring the internal resistance of such devices by making use of the intrinsic distributed resistance nature of the devices. The method provides for forward-biasing a solar cell or other device while it is scanning with an optical spot. The forward-biasing is achieved with either an illuminator light source or an external current source.

    1. Nondestructive method for detecting defects in photodetector and solar cell devices

      DOE Patents [OSTI]

      Not Available

      The invention described herein is a method for locating semiconductor device defects and for measuring the internal resistance of such devices by making use of the intrinsic distributed resistance nature of the devices. The method provides for forward-biasing a solar cell or other device while it is scanning with an optical spot. The forward-biasing is achieved with either an illuminator light source or an external current source.

    2. Hot Rolling Scrap Reduction through Edge Cracking and Surface Defects Control

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      Hot Rolling Scrap Reduction through Edge Cracking and Surface Defects Control Improving Energy Efficiency in Hot Rolling by Increasing Recovery Rates Hot rolling of large ingots is the predominant process for producing plate, sheet, and foil aluminum products. Hot rolling has typical recovery rates of 82%, because 18% of the original material is lost as planned end cuts and scalping, or as incidental (unplanned) scrap. Hot rolled scrap is then typically re-melted to either form fresh ingot

    3. Defect scriber

      DOE Patents [OSTI]

      Russell, Harold C.

      1979-01-01

      This disclosure describes a device for repeatably scribing a V-shaped scratch having sharply defined dimensions on the interior surface of a nuclear reactor fuel rod tube. A cutting tool having a V-shaped cutting tip is supported within the fuel rod tube so that the V-shaped cutting tip can be pivoted about an axis and scribe a scratch on the interior surface of the fuel rod tube. Lengthwise the scratch runs parallel to a line drawn through the axis of the fuel rod tube and is in the shape of an arc, and widthwise the scratch is V-shaped. This shape is used because the dimensions of the scratch can be plugged into appropriate formulas to calculate stress intensity of cracks in fuel rod tubes. Since the fuel rod tubes which are to be scribed may be radioactive, the scratching assembly is designed for use in a fixture which allows it to be operated in a cave by remote control handling devices.

    4. Continuous-wave radar to detect defects within heat exchangers and steam generator tubes.

      SciTech Connect (OSTI)

      Nassersharif, Bahram (New Mexico State University, Las Cruces, NM); Caffey, Thurlow Washburn Howell; Jedlicka, Russell P.; Garcia, Gabe V. (New Mexico State University, Las Cruces, NM); Rochau, Gary Eugene

      2003-01-01

      A major cause of failures in heat exchangers and steam generators in nuclear power plants is degradation of the tubes within them. The tube failure is often caused by the development of cracks that begin on the outer surface of the tube and propagate both inwards and laterally. A new technique was researched for detection of defects using a continuous-wave radar method within metal tubing. The experimental program resulted in a completed product development schedule and the design of an experimental apparatus for studying handling of the probe and data acquisition. These tests were completed as far as the prototypical probe performance allowed. The prototype probe design did not have sufficient sensitivity to detect a defect signal using the defined radar technique and did not allow successful completion of all of the project milestones. The best results from the prototype probe could not detect a tube defect using the radar principle. Though a more precision probe may be possible, the cost of design and construction was beyond the scope of the project. This report describes the probe development and the status of the design at the termination of the project.

    5. Investigation of defects in InGaZn oxide thin film using electron spin resonance signals

      SciTech Connect (OSTI)

      Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi; Yamauchi, Jun

      2014-04-28

      InGaZn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g?=?2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g?=?1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

    6. Effect of point defects on the thermal conductivity of UO2: molecular dynamics simulations

      SciTech Connect (OSTI)

      Liu, Xiang-Yang; Stanek, Christopher Richard; Andersson, Anders David Ragnar

      2015-07-21

      The thermal conductivity of uranium dioxide (UO2) fuel is an important materials property that affects fuel performance since it is a key parameter determining the temperature distribution in the fuel, thus governing, e.g., dimensional changes due to thermal expansion, fission gas release rates, etc. [1] The thermal conductivity of UO2 nuclear fuel is also affected by fission gas, fission products, defects, and microstructural features such as grain boundaries. Here, molecular dynamics (MD) simulations are carried out to determine quantitatively, the effect of irradiation induced point defects on the thermal conductivity of UO2, as a function of defect concentrations, for a range of temperatures, 300 – 1500 K. The results will be used to develop enhanced continuum thermal conductivity models for MARMOT and BISON by INL. These models express the thermal conductivity as a function of microstructure state-variables, thus enabling thermal conductivity models with closer connection to the physical state of the fuel [2].

    7. Fragmentation of fast Josephson vortices and breakdown of ordered states by moving topological defects

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Sheikhzada, Ahmad; Gurevich, Alex

      2015-12-07

      Topological defects such as vortices, dislocations or domain walls define many important effects in superconductivity, superfluidity, magnetism, liquid crystals, and plasticity of solids. Here we address the breakdown of the topologically-protected stability of such defects driven by strong external forces. We focus on Josephson vortices that appear at planar weak links of suppressed superconductivity which have attracted much attention for electronic applications, new sources of THz radiation, and low-dissipative computing. Our numerical simulations show that a rapidly moving vortex driven by a constant current becomes unstable with respect to generation of vortex-antivortex pairs caused by Cherenkov radiation. As a result,more » vortices and antivortices become spatially separated and accumulate continuously on the opposite sides of an expanding dissipative domain. This effect is most pronounced in thin film edge Josephson junctions at low temperatures where a single vortex can switch the whole junction into a resistive state at currents well below the Josephson critical current. In conclusion, our work gives a new insight into instability of a moving topological defect which destroys global long-range order in a way that is remarkably similar to the crack propagation in solids.« less

    8. Influence of chemical disorder on energy dissipation and defect evolution in concentrated solid solution alloys

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Zhang, Yanwen; Stocks, George Malcolm; Jin, Ke; Lu, Chenyang; Bei, Hongbin; Sales, Brian C.; Wang, Lumin; Béland, Laurent K.; Stoller, Roger E.; Samolyuk, German D.; et al

      2015-10-28

      A long-standing objective in materials research is to understand how energy is dissipated in both the electronic and atomic subsystems in irradiated materials, and how related non-equilibrium processes may affect defect dynamics and microstructure evolution. Here we show that alloy complexity in concentrated solid solution alloys having both an increasing number of principal elements and altered concentrations of specific elements can lead to substantial reduction in the electron mean free path and thermal conductivity, which has a significant impact on energy dissipation and consequentially on defect evolution during ion irradiation. Enhanced radiation resistance with increasing complexity from pure nickel tomore » binary and to more complex quaternary solid solutions is observed under ion irradiation up to an average damage level of 1 displacement per atom. Understanding how materials properties can be tailored by alloy complexity and their influence on defect dynamics may pave the way for new principles for the design of radiation tolerant structural alloys.« less

    9. Ab initio study of point defects near stacking faults in 3C-SiC

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Xi, Jianqi; Liu, Bin; Zhang, Yanwen; Weber, William J.

      2016-07-02

      Interactions between point defects and stacking faults in 3C-SiC are studied using an ab initio method based on density functional theory. The results show that the discontinuity of the stacking sequence considerably affects the configurations and behavior of intrinsic defects, especially in the case of silicon interstitials. The existence of an intrinsic stacking fault (missing a C-Si bilayer) shortens the distance between the tetrahedral-center site and its second-nearest-neighboring silicon layer, making the tetrahedral silicon interstitial unstable. Instead of a tetrahedral configuration with four C neighbors, a pyramid-like interstitial structure with a defect state within the band gap becomes a stablemore » configuration. In addition, orientation rotation occurs in the split interstitials that has diverse effects on the energy landscape of silicon and carbon split interstitials in the stacking fault region. Moreover, our analyses of ionic relaxation and electronic structure of vacancies show that the built-in strain field, owing to the existence of the stacking fault, makes the local environment around vacancies more complex than that in the bulk.« less

    10. Self-evolving atomistic kinetic Monte Carlo simulations of defects in materials

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Xu, Haixuan; Beland, Laurent K.; Stoller, Roger E.; Osetskiy, Yury N.

      2015-01-29

      The recent development of on-the-fly atomistic kinetic Monte Carlo methods has led to an increased amount attention on the methods and their corresponding capabilities and applications. In this review, the framework and current status of Self-Evolving Atomistic Kinetic Monte Carlo (SEAKMC) are discussed. SEAKMC particularly focuses on defect interaction and evolution with atomistic details without assuming potential defect migration/interaction mechanisms and energies. The strength and limitation of using an active volume, the key concept introduced in SEAKMC, are discussed. Potential criteria for characterizing an active volume are discussed and the influence of active volume size on saddle point energies ismore » illustrated. A procedure starting with a small active volume followed by larger active volumes was found to possess higher efficiency. Applications of SEAKMC, ranging from point defect diffusion, to complex interstitial cluster evolution, to helium interaction with tungsten surfaces, are summarized. A comparison of SEAKMC with molecular dynamics and conventional object kinetic Monte Carlo is demonstrated. Overall, SEAKMC is found to be complimentary to conventional molecular dynamics, especially when the harmonic approximation of transition state theory is accurate. However it is capable of reaching longer time scales than molecular dynamics and it can be used to systematically increase the accuracy of other methods such as object kinetic Monte Carlo. Furthermore, the challenges and potential development directions are also outlined.« less

    11. Ion irradiation induced defect evolution in Ni and Ni-based FCC equiatomic binary alloys

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Jin, Ke; Zhang, Yanwen; Bei, Hongbin

      2016-01-01

      In order to explore the chemical effects on radiation response of alloys with multi-principal elements, defect evolution under Au ion irradiation was investigated in the elemental Ni, equiatomic NiCo and NiFe alloys. Single crystals were successfully grown in an optical floating zone furnace and their (100) surfaces were irradiated with 3 MeV Au ions at fluences ranging from 1 × 1013 to 5 × 1015 ions cm–2 at room temperature. The irradiation-induced defect evolution was analyzed by using ion channeling technique. Experiment shows that NiFe is more irradiation-resistant than NiCo and pure Ni at low fluences. With continuously increasing themore » ion fluences, damage level is eventually saturated for all materials but at different dose levels. The saturation level in pure Ni appears at relatively lower irradiation fluence than the alloys, suggesting that damage accumulation slows down in the alloys. Here, under high-fluence irradiations, pure Ni has wider damage ranges than the alloys, indicating that defects in pure Ni have high mobility.« less

    12. Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects or vacancies

      SciTech Connect (OSTI)

      Park, Sohee [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of)] [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of); Park, Changwon [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)] [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Kim, Gunn, E-mail: gunnkim@sejong.ac.kr [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)] [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

      2014-04-07

      Hexagonal boron nitride (hBN), a remarkable material with a two-dimensional atomic crystal structure, has the potential to fabricate heterostructures with unusual properties. We perform first-principles calculations to determine whether intercalated metal atoms and vacancies can mediate interfacial coupling and influence the structural and electronic properties of the graphene/hBN heterostructure. Metal impurity atoms (Li, K, Cr, Mn, Co, and Cu), acting as extrinsic defects between the graphene and hBN sheets, produce n-doped graphene. We also consider intrinsic vacancy defects and find that a boron monovacancy in hBN acts as a magnetic dopant for graphene, whereas a nitrogen monovacancy in hBN serves as a nonmagnetic dopant for graphene. In contrast, the smallest triangular vacancy defects in hBN are unlikely to result in significant changes in the electronic transport of graphene. Our findings reveal that a hBN layer with some vacancies or metal impurities enhances the interlayer coupling in the graphene/hBN heterostructure with respect to charge doping and electron scattering.

    13. Migration of defect clusters and xenon-vacancy clusters in uranium dioxide

      SciTech Connect (OSTI)

      Chen, Dong; Gao, Fei; Deng, Huiqiu; Hu, Wangyu; Sun, Xin

      2014-07-01

      The possible transition states, minimum energy paths and migration mechanisms of defect clusters and xenon-vacancy defect clusters in uranium dioxide have been investigated using the dimer and the nudged elastic-band methods. The nearby O atom can easily hop into the oxygen vacancy position by overcoming a small energy barrier, which is much lower than that for the migration of a uranium vacancy. A simulation for a vacancy cluster consisting of two oxygen vacancies reveals that the energy barrier of the divacancy migration tends to decrease with increasing the separation distance of divacancy. For an oxygen interstitial, the migration barrier for the hopping mechanism is almost three times larger than that for the exchange mechanism. Xe moving between two interstitial sites is unlikely a dominant migration mechanism considering the higher energy barrier. A net migration process of a Xe-vacancy pair containing an oxygen vacancy and a xenon interstitial is identified by the NEB method. We expect the oxygen vacancy-assisted migration mechanism to possibly lead to a long distance migration of the Xe interstitials in UO2. The migration of defect clusters involving Xe substitution indicates that Xe atom migrating away from the uranium vacancy site is difficult.

    14. Ionization-induced annealing of pre-existing defects in silicon carbide

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H.; Chisholm, Matthew F.; Liu, Peng; Xue, Haizhou; Weber, William J.

      2015-08-12

      A long-standing objective in materials research is to find innovative ways to remove preexisting damage and heal fabrication defects or environmentally induced defects in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power, high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization processes results in a highly localized thermal spike that can effectively heal preexisting defects and restore the structural order. This work revealsmore » an innovative self-healing process using highly ionizing ions, and it describes a critical aspect to be considered in modeling SiC performance as either a functional or a structural material for device applications or high-radiation environments.« less

    15. Fragmentation of fast Josephson vortices and breakdown of ordered states by moving topological defects

      SciTech Connect (OSTI)

      Sheikhzada, Ahmad; Gurevich, Alex

      2015-12-07

      Topological defects such as vortices, dislocations or domain walls define many important effects in superconductivity, superfluidity, magnetism, liquid crystals, and plasticity of solids. Here we address the breakdown of the topologically-protected stability of such defects driven by strong external forces. We focus on Josephson vortices that appear at planar weak links of suppressed superconductivity which have attracted much attention for electronic applications, new sources of THz radiation, and low-dissipative computing. Our numerical simulations show that a rapidly moving vortex driven by a constant current becomes unstable with respect to generation of vortex-antivortex pairs caused by Cherenkov radiation. As a result, vortices and antivortices become spatially separated and accumulate continuously on the opposite sides of an expanding dissipative domain. This effect is most pronounced in thin film edge Josephson junctions at low temperatures where a single vortex can switch the whole junction into a resistive state at currents well below the Josephson critical current. In conclusion, our work gives a new insight into instability of a moving topological defect which destroys global long-range order in a way that is remarkably similar to the crack propagation in solids.

    16. Defect structures induced by high-energy displacement cascades in γ uranium

      SciTech Connect (OSTI)

      Miao, Yinbin; Beeler, Benjamin; Deo, Chaitanya; Baskes, Michael I.; Okuniewski, Maria A.; Stubbins, James F.

      2015-01-01

      Displacement cascade simulations were conducted for the c uranium system based on molecular dynamics. A recently developed modified embedded atom method (MEAM) potential was employed to replicate the atomic interactions while an embedded atom method (EAM) potential was adopted to help characterize the defect structures induced by the displacement cascades. The atomic displacement process was studied by providing primary knock-on atoms (PKAs) with kinetic energies from 1 keV to 50 keV. The influence of the PKA incident direction was examined. The defect structures were analyzed after the systems were fully relaxed. The states of the self-interstitial atoms (SIAs) were categorized into various types of dumbbells, the crowdion, and the octahedral interstitial. The voids were determined to have a polyhedral shape with {110} facets. The size distribution of the voids was also obtained. The results of this study not only expand the knowledge of the microstructural evolution in irradiated c uranium, but also provide valuable references for the radiation-induced defects in uranium alloy fuels.

    17. Ion irradiation induced defect evolution in Ni and Ni-based FCC equiatomic binary alloys

      SciTech Connect (OSTI)

      Jin, Ke; Zhang, Yanwen; Bei, Hongbin

      2016-01-01

      In order to explore the chemical effects on radiation response of alloys with multi-principal elements, defect evolution under Au ion irradiation was investigated in the elemental Ni, equiatomic NiCo and NiFe alloys. Single crystals were successfully grown in an optical floating zone furnace and their (100) surfaces were irradiated with 3 MeV Au ions at fluences ranging from 1 × 1013 to 5 × 1015 ions cm–2 at room temperature. The irradiation-induced defect evolution was analyzed by using ion channeling technique. Experiment shows that NiFe is more irradiation-resistant than NiCo and pure Ni at low fluences. With continuously increasing the ion fluences, damage level is eventually saturated for all materials but at different dose levels. The saturation level in pure Ni appears at relatively lower irradiation fluence than the alloys, suggesting that damage accumulation slows down in the alloys. Here, under high-fluence irradiations, pure Ni has wider damage ranges than the alloys, indicating that defects in pure Ni have high mobility.

    18. Stress-dependent recovery of point defects in deformed aluminum: An acoustic-damping study

      SciTech Connect (OSTI)

      Ogi, H.; Tsujimoto, A.; Hirao, M.; Ledbetter, H.

      1999-10-26

      The stress dependence of point-defect diffusion to dislocations in a 99.99% polycrystalline aluminum was studied using shear-wave attenuation and phase velocity. By holding the stress after deformation, attenuation and velocity approach their nonstressed values. The holding stress was varied between 0 and 12 MPa, after applying a 15 MPa compressive stress. Time-independent attenuation and stress-induced velocity change were introduced into the Granato-Hikata-Luecke theory, which first established the change of attenuation and velocity caused by the point-defect diffusion to dislocations. Good agreement was found between measurements and the modified theory. The stress dependence of the recovery rate was interpreted as a reduction of the migration energy of point defects diffusing to dislocations, and the activation volume was calculated for uniaxial stress. Electromagnetic acoustic resonance (EMAR) was used for the measurements. Being noncontact and highly sensitive, EMAR permitted detailed measurement of the attenuation and velocity evolutions during the unloading-holding stress sequence.

    19. Sequential Infiltration Synthesis Advances Lithography (IN-10...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      practical applications of DSA by dramatically improving both the etch resistance and differential etch resistance of block copolymer films. Technology Marketing Summary...

    20. Superconductive silicon nanowires using gallium beam lithography.

      SciTech Connect (OSTI)

      Henry, Michael David; Jarecki, Robert Leo,

      2014-01-01

      This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.