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Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Investigating Extreme Ultraviolet Lithography Mask Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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2

Investigating Extreme Ultraviolet Lithography Mask Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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3

Method and apparatus for inspecting reflection masks for defects  

DOE Patents [OSTI]

An at-wavelength system for extreme ultraviolet lithography mask blank defect detection is provided. When a focused beam of wavelength 13 nm is incident on a defective region of a mask blank, three possible phenomena can occur. The defect will induce an intensity reduction in the specularly reflected beam, scatter incoming photons into an off-specular direction, and change the amplitude and phase of the electric field at the surface which can be monitored through the change in the photoemission current. The magnitude of these changes will depend on the incident beam size, and the nature, extent and size of the defect. Inspection of the mask blank is performed by scanning the mask blank with 13 nm light focused to a spot a few .mu.m in diameter, while measuring the reflected beam intensity (bright field detection), the scattered beam intensity (dark-field detection) and/or the change in the photoemission current.

Bokor, Jeffrey (Oakland, CA); Lin, Yun (Berkeley, CA)

2003-04-29T23:59:59.000Z

4

Method for mask repair using defect compensation  

DOE Patents [OSTI]

A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.

Sweeney, Donald W. (San Ramon, CA); Ray-Chaudhuri, Avijit K. (Livermore, CA)

2001-01-01T23:59:59.000Z

5

EUV mask surface cleaning effects on lithography process performance  

SciTech Connect (OSTI)

The reflective, multilayer based, mask architectures for extreme ultraviolet (EUV) lithography are highly susceptible to surface oxidation and contamination. As a result, EUV masks are expected to undergo cleaning processes in order to maintain the lifetimes necessary for high volume manufacturing. For this study, the impact of repetitive cleaning of EUV masks on imaging performance was evaluated. Two, high quality industry standard, EUV masks are used for this study with one of the masks undergoing repeated cleaning and the other one kept as a reference. Lithographic performance, in terms of process window analysis and line edge roughness, was monitored after every two cleans and compared to the reference mask performance. After 8x clean, minimal degradation is observed. The cleaning cycles will be continued until significant loss imaging fidelity is found.

George, Simi; Baclea-an, Lorie Mae; Naulleau, Patrick; Chen, Robert J.; Liang, Ted

2010-06-18T23:59:59.000Z

6

Vitreous carbon mask substrate for X-ray lithography  

DOE Patents [OSTI]

The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

Aigeldinger, Georg (Livermore, CA); Skala, Dawn M. (Fremont, CA); Griffiths, Stewart K. (Livermore, CA); Talin, Albert Alec (Livermore, CA); Losey, Matthew W. (Livermore, CA); Yang, Chu-Yeu Peter (Dublin, CA)

2009-10-27T23:59:59.000Z

7

Investigating Extreme Ultraviolet Lithography Mask Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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8

Investigating Extreme Ultraviolet Lithography Mask Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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9

Investigating Extreme Ultraviolet Lithography Mask Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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10

Investigating Extreme Ultraviolet Lithography Mask Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFunInfrared LandResponses toInvestigating Extreme Ultraviolet

11

Investigating Extreme Ultraviolet Lithography Mask Defects  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFunInfrared LandResponses toInvestigating Extreme UltravioletInvestigating

12

Actinic imaging of native and programmed defects on a full-field mask , K. A. Goldberga  

E-Print Network [OSTI]

c Global Foundries Dresden Module One. KG Wilschdorfer Landstr. 101, 01109 Dresden, Germany technology node. This is especially true for EUV lithography where the mask, the absorber pattern presented previously [3] separated the defects into the following categories: cleaning residue, particle

13

Atom Nano-lithography with Multi-layer Light Masks: Particle Optics Analysis  

E-Print Network [OSTI]

We study the focusing of atoms by multiple layers of standing light waves in the context of atom lithography. In particular, atomic localization by a double-layer light mask is examined using the optimal squeezing approach. Operation of the focusing setup is analyzed both in the paraxial approximation and in the regime of nonlinear spatial squeezing for the thin-thin as well as thin-thick atom lens combinations. It is shown that the optimized double light mask may considerably reduce the imaging problems, improve the quality of focusing and enhance the contrast ratio of the deposited structures.

R. Arun; I. Sh. Averbukh; T. Pfau

2005-03-22T23:59:59.000Z

14

Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns  

DOE Patents [OSTI]

The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

Hau-Riege, Stefan Peter (Fremont, CA)

2007-05-01T23:59:59.000Z

15

Context-based automated defect classification system using multiple morphological masks  

DOE Patents [OSTI]

Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

Gleason, Shaun S. (Knoxville, TN); Hunt, Martin A. (Knoxville, TN); Sari-Sarraf, Hamed (Lubbock, TX)

2002-01-01T23:59:59.000Z

16

Comparison of fast 3D simulation and actinic inspection for EUV masks with buries defects  

SciTech Connect (OSTI)

Aerial images for isolated defects and the interactions of defects with features are compared between the Actinic Inspection Tool (AIT) at Lawrence Berkeley National Laboratory (LBNL) and the fast EUV simulation program RADICAL. Comparisons between AIT images from August 2007 and RADICAL simulations are used to extract aberrations. At this time astigmatism was the dominant aberration with a value of 0.55 waves RMS. Significant improvements in the imaging performance of the AIT were made between August 2007 and December 2008. A good match will be shown between the most recent AIT images and RADICAL simulations without aberrations. These comparisons will demonstrate that a large defect, in this case 7nm tall on the surface, is still printable even if it is centered under the absorber line. These comparisons also suggest that the minimum defect size is between 1.5nm and 0.8nm surface height because a 1.5nm defect was printable but a 0.8nm was not. Finally, the image of a buried defect near an absorber line through focus will demonstrate an inversion in the effect of the defect from a protrusion of the dark line into the space to a protrusion of the space into the line.

Clifford, C. H.; Wiraatmadja, S.; Chan, T. T.; Neureuther, A. R.; Goldberg, K. A.; Mochi, I.; Liang, T.

2009-02-23T23:59:59.000Z

17

Diffractive optics for maskless lithography and imaging  

E-Print Network [OSTI]

Semiconductor industry has primarily been driven by the capability of lithography to pattern smaller and smaller features. However due to increasing mask costs and complexity, and increasing tool costs, the state-of-the-art ...

Menon, Rajesh, 1976-

2003-01-01T23:59:59.000Z

18

Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer  

DOE Patents [OSTI]

A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

Cardinale, Gregory F. (Oakland, CA)

2002-01-01T23:59:59.000Z

19

An Ice Lithography Instrument Anpan Han 1, John Chervinsky2  

E-Print Network [OSTI]

Page 1 An Ice Lithography Instrument Anpan Han 1, John Chervinsky2 , Daniel Branton3 , and J. A a new nano-patterning method called ice lithography, where ice is used as the resist. Water vapor. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice

20

Extreme ultraviolet lithography machine  

DOE Patents [OSTI]

An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

Tichenor, Daniel A. (Castro Valley, CA); Kubiak, Glenn D. (Livermore, CA); Haney, Steven J. (Tracy, CA); Sweeney, Donald W. (San Ramon, CA)

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Method for extreme ultraviolet lithography  

DOE Patents [OSTI]

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

Felter, T. E. (Livermore, CA); Kubiak, Glenn D. (Livermore, CA)

1999-01-01T23:59:59.000Z

22

Method for extreme ultraviolet lithography  

DOE Patents [OSTI]

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

Felter, T. E. (727 Clara St., Livermore, Alameda County, CA 94550); Kubiak, G. D. (475 Maple St., Livermore, Alameda County, CA 94550)

2000-01-01T23:59:59.000Z

23

Validity of the thin mask approximation in extreme ultraviolet mask roughness simulations  

SciTech Connect (OSTI)

In the case of extreme ultraviolet (EUV) lithography, modeling has shown that reflector phase roughness on the lithographic mask is a significant concern due to the image plan speckle it causes and the resulting line-edge roughness on imaged features. Modeling results have recently been used to determine the requirements for future production worthy masks yielding the extremely stringent specification of 50 pm rms roughness. Owing to the scale of the problem in terms of memory requirements, past modeling results have all been based on the thin mask approximation. EUV masks, however, are inherently three dimensional in nature and thus the question arises as to the validity of the thin mask approximation. Here we directly compare image plane speckle calculation results using the fast two dimensional thin mask model to rigorous finite-difference time-domain results and find the two methods to be comparable.

Naulleau, Patrick; George, Simi

2011-01-26T23:59:59.000Z

24

Absorbance modulation optical lithography  

E-Print Network [OSTI]

In this thesis, the concept of absorbance-modulation optical lithography (AMOL) is described, and the feasibility experimentally verified. AMOL is an implementation of nodal lithography, which is not bounded by the diffraction ...

Tsai, Hsin-Yu Sidney

2007-01-01T23:59:59.000Z

25

Coatings on reflective mask substrates  

DOE Patents [OSTI]

A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

Tong, William Man-Wai (Oakland, CA); Taylor, John S. (Livermore, CA); Hector, Scott D. (Oakland, CA); Mangat, Pawitter J. S. (Gilbert, AZ); Stivers, Alan R. (San Jose, CA); Kofron, Patrick G. (San Jose, CA); Thompson, Matthew A. (Austin, TX)

2002-01-01T23:59:59.000Z

26

Photoresist composition for extreme ultraviolet lithography  

DOE Patents [OSTI]

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

Felter, T. E. (Alameda County, CA); Kubiak, G. D. (Alameda County, CA)

1999-01-01T23:59:59.000Z

27

Contact thermal lithography  

E-Print Network [OSTI]

Contact thermal lithography is a method for fabricating microscale patterns using heat transfer. In contrast to photolithography, where the minimum achievable feature size is proportional to the wavelength of light used ...

Schmidt, Aaron Jerome, 1979-

2004-01-01T23:59:59.000Z

28

M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features  

DOE Patents [OSTI]

Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

Brueck, Steven R.J. (Albuquerque, NM); Chen, Xiaolan (Albuquerque, NM); Zaidi, Saleem (Albuquerque, NM); Devine, Daniel J. (Los Gatos, CA)

1998-06-02T23:59:59.000Z

29

Development of free-electron lasers for xuv projection lithography  

SciTech Connect (OSTI)

Future rf-linac-driven FELs, operating in the range from 4 nm to 100 nm, could be excellent exposure tools for extending the resolution limit of projection optical lithography to {le}0.1 {mu}m and with adequate total depth of focus (1 to 2 {mu}m). When operated at a moderate duty rate of {ge}1%, XUV FELs should be able to supply sufficient average power to support high-volume chip production. Recent developments of the electron beam, magnetic undulator, and resonator mirrors are described which raise our expectation that FEL operation below 100 nm is almost ready for demonstration. Included as a supplement is a review of initial design studies of the reflecting XUV projection optics, fabrication of reflection masks, characterization of photoresists, and the first experimental demonstrations of the capability of projection lithography with 14-nm radiation to produce lines and spaces as small as 0.05 {mu}m. 88 refs., 10 figs.

Newnam, B.E.

1990-01-01T23:59:59.000Z

30

Transparent fluids for 157-nm immersion lithography  

E-Print Network [OSTI]

- gineers. [DOI: 10.1117/1.1637366] Subject terms: 157-nm lithography; immersion fluid; perfluoropolyether

Rollins, Andrew M.

31

Soft x-ray reduction camera for submicron lithography  

DOE Patents [OSTI]

Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm.sup.2. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics.

Hawryluk, Andrew M. (2708 Rembrandt Pl., Modesto, CA 95356); Seppala, Lynn G. (7911 Mines Rd., Livermore, CA 94550)

1991-01-01T23:59:59.000Z

32

Soft x-ray reduction camera for submicron lithography  

DOE Patents [OSTI]

Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm[sup 2]. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics. 9 figures.

Hawryluk, A.M.; Seppala, L.G.

1991-03-26T23:59:59.000Z

33

Programmable imprint lithography template  

DOE Patents [OSTI]

A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

Cardinale, Gregory F. (Oakland, CA); Talin, Albert A. (Livermore, CA)

2006-10-31T23:59:59.000Z

34

Masked multichannel analyzer  

DOE Patents [OSTI]

An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

Winiecki, Alan L. (Downers Grove, IL); Kroop, David C. (Columbia, MD); McGee, Marilyn K. (Colorado Springs, CO); Lenkszus, Frank R. (Woodridge, IL)

1986-01-01T23:59:59.000Z

35

Critical illumination condenser for x-ray lithography  

DOE Patents [OSTI]

A critical illumination condenser system, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 .mu.m source and requires a magnification of 26.times.. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth.

Cohen, Simon J. (Pleasanton, CA); Seppala, Lynn G. (Livermore, CA)

1998-01-01T23:59:59.000Z

36

Critical illumination condenser for x-ray lithography  

DOE Patents [OSTI]

A critical illumination condenser system is disclosed, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 {micro}m source and requires a magnification of 26. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth. 6 figs.

Cohen, S.J.; Seppala, L.G.

1998-04-07T23:59:59.000Z

37

X-ray lithography source  

DOE Patents [OSTI]

A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

Piestrup, M.A.; Boyers, D.G.; Pincus, C.

1991-12-31T23:59:59.000Z

38

X-ray lithography source  

DOE Patents [OSTI]

A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

Piestrup, Melvin A. (Woodside, CA); Boyers, David G. (Mountain View, CA); Pincus, Cary (Sunnyvale, CA)

1991-01-01T23:59:59.000Z

39

Sandia National Laboratories: MASK  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -theErik Spoerke SSLS ExhibitIowaLos Alamos National LaboratoryEngineersMASK

40

Actinic characterization of EUV bump-type phase defects  

SciTech Connect (OSTI)

Despite tremendous progress and learning with EUV lithography, quantitative experimental information about the severity of point-like phase defects remains in short supply. We present a study of measured, EUV aerial images from a series of well-characterized, open-field, bump-type programmed phase defects, created on a substrate before multilayer deposition.

Goldberg, Kenneth A.; Mochi, Iacopo; Liang, Ted

2011-01-10T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Extreme-UV lithography system  

DOE Patents [OSTI]

A photolithography system that employs a condenser that includes a series of aspheric mirrors on one side of a small, incoherent source of radiation producing a series of beams is provided. Each aspheric mirror images the quasi point source into a curved line segment. A relatively small arc of the ring image is needed by the camera; all of the beams are so manipulated that they all fall onto this same arc needed by the camera. Also, all of the beams are aimed through the camera's virtual entrance pupil. The condenser includes a correcting mirror for reshaping a beam segment which improves the overall system efficiency. The condenser efficiently fills the larger radius ringfield created by today's advanced camera designs. The system further includes (i) means for adjusting the intensity profile at the camera's entrance pupil or (ii) means for partially shielding the illumination imaging onto the mask or wafer. The adjusting means can, for example, change at least one of: (i) partial coherence of the photolithography system, (ii) mask image illumination uniformity on the wafer or (iii) centroid position of the illumination flux in the entrance pupil. A particularly preferred adjusting means includes at least one vignetting mask that covers at least a portion of the at least two substantially equal radial segments of the parent aspheric mirror.

Replogle, William C. (Livermore, CA); Sweatt, William C. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

42

ORC Seminar Series Presents: "Nonlinear laser lithography  

E-Print Network [OSTI]

ORC Seminar Series Presents: "Nonlinear laser lithography: formation of self-authored 50 journal and more than 150 conference papers and he has given more than 100 invited talks. http://www.orc

Anderson, Jim

43

Extreme-UV lithography condenser  

DOE Patents [OSTI]

Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

Sweatt, William C. (Albuquerque, NM); Sweeney, Donald W. (San Ramon, CA); Shafer, David (Fairfield, CT); McGuire, James (Pasadena, CA)

2001-01-01T23:59:59.000Z

44

The Effects of Oxygen Plasma on the Chemical Composition and Morphology of the Ru Capping Layer of the Extreme Ultraviolet (EUV) Mask Blanks  

SciTech Connect (OSTI)

Contamination removal from extreme ultraviolet (EUV) mask surfaces is one of the most important aspects to improve reliability for the next generation of EUV lithography. We report chemical and morphological changes of the ruthenium (Ru) mask surface after oxygen plasma treatment using surface sensitive analytical methods: X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and transmission electron microscopy (TEM). Chemical analysis of the EUV masks shows an increase in the subsurface oxygen concentration, Ru oxidation and surface roughness. XPS spectra at various photoelectron takeoff angles suggest that the EUV mask surface was covered with chemisorbed oxygen after oxygen plasma treatment. It is proposed that the Kirkendall effect is the most plausible mechanism that explains the Ru surface oxidation. The etching rate of the Ru capping layer by oxygen plasma was estimated to be 1.5 {+-} 0.2 {angstrom}/min, based on TEM cross sectional analysis.

Belau, Leonid; Park, Jeong Y.; Liang, Ted; Somorjai, Gabor A.

2008-06-07T23:59:59.000Z

45

II. Types of LithographyII. Types of Lithography A. Photolithography (optical, UV, EUV) F. Step Growth  

E-Print Network [OSTI]

lithography S i b I. Self-Assembly J NanotemplatesE. Scanning Probe Voltage pulse CVD Local electrodeposition J. Nanotemplates Diblock copolymer Sphere Alumina membraneLocal electrodeposition Dip Interference Lithography FIG. 1. SEM images of nickel dot arrays fabricated by x-ray interference lithography

Liu, Kai

46

Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask  

SciTech Connect (OSTI)

Two-dimensional (2D) atomic crystals and their hybrid structures have recently attracted much attention due to their potential applications. The fabrication of metallic contacts or nanostructures on 2D materials is very common and generally achieved by performing electron-beam (e-beam) lithography. However, e-beam lithography is not applicable in certain situations, e.g., cases in which the e-beam resist does not adhere to the substrates or the intrinsic properties of the 2D materials are greatly altered and degraded. Here, we present a residue-free approach for fabricating high-performance graphene devices by patterning a thin film of e-beam resist as a stencil mask. This technique can be generally applied to substrates with varying surface conditions, while causing negligible residues on graphene. The technique also preserves the design flexibility offered by e-beam lithography and therefore allows us to fabricate multi-probe metallic contacts. The graphene field-effect transistors fabricated by this method exhibit smooth surfaces, high mobility, and distinct magnetotransport properties, confirming the advantages and versatility of the presented residue-free technique for the fabrication of devices composed of 2D materials.

Shih, Fu-Yu [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Chen, Shao-Yu; Wu, Tsuei-Shin; Wang, Wei-Hua, E-mail: wwang@sinica.edu.tw [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Liu, Cheng-Hua; Chen, Yang-Fang [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Ho, Po-Hsun; Chen, Chun-Wei [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2014-06-15T23:59:59.000Z

47

Magnetic nanostructures patterned by block copolymer lithography  

E-Print Network [OSTI]

The aim of this research was twofold: understanding the methods of patterning magnetic films using self-assembled block copolymer masks and examining the magnetic reversal mechanisms of as deposited and patterned magnetic ...

Ilievski, Filip, 1980-

2008-01-01T23:59:59.000Z

48

Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography  

DOE Patents [OSTI]

A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated beam at grazing incidence. The ripple plate comprises a plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

Chapman, Henry N. (Livermore, CA); Nugent, Keith A. (North Fitzroy, AU)

2001-01-01T23:59:59.000Z

49

Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography  

DOE Patents [OSTI]

A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated or converging beam at grazing incidence. The ripple plate comprises a flat or curved plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

Chapman, Henry N. (Livermore, CA); Nugent, Keith A. (North Fitzroy, AU)

2002-01-01T23:59:59.000Z

50

Nanofabrication on unconventional substrates using transferred hard masks  

E-Print Network [OSTI]

A major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or ...

Li, Luozhou

51

UNCTIONAL PERFLUOROPOLYETHERS AS NOVEL MATERIALS FOR MICROFLUIDICS AND SOFT LITHOGRAPHY  

E-Print Network [OSTI]

UNCTIONAL PERFLUOROPOLYETHERS AS NOVEL MATERIALS FOR MICROFLUIDICS AND SOFT LITHOGRAPHY Jason P photocurable perfluoropolyethers (PFPEs). PFPEs are a unique class of fluoropolymers that are liquids at room

Carter, Kenneth

52

Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System  

SciTech Connect (OSTI)

The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies have been studied. The dependence of the throughput with the exposure field size and the speed of the mechanical stage has been investigated. In order to perform maskless lithography, different micro-fabricated pattern generators have been developed for the MMRL system. Ion beamlet switching has been successfully demonstrated on the MMRL system. A positive bias voltage around 10 volts is sufficient to switch off the ion current on the micro-fabricated pattern generators. Some unexpected problems, such as the high-energy secondary electron radiations, have been discovered during the experimental investigation. Thermal and structural analysis indicates that the aperture displacement error induced by thermal expansion can satisfy the 3{delta} CD requirement for lithography nodes down to 25 nm. The cross-talking effect near the surface and inside the apertures of the pattern generator has been simulated in a 3-D ray-tracing code. New pattern generator design has been proposed to reduce the cross-talking effect. In order to eliminate the surface charging effect caused by the secondary electrons, a new beam-switching scheme in which the switching electrodes are immersed in the plasma has been demonstrated on a mechanically fabricated pattern generator.

Jiang, Ximan

2006-05-18T23:59:59.000Z

53

E-Print Network 3.0 - arf immersion lithography Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

immersion lithography using ArF illumination... node; 38-nm node; high-n immersion fluids; ArF immersion lithography; 193-nm immersion ... Source: French, Roger H. -...

54

CMA Operating Manual: Canon Mask Aligner Introduction  

E-Print Network [OSTI]

CMA Operating Manual: Canon Mask Aligner Introduction Use the Canon PLA-501F Mask Aligner (See Fig: Dan Haskell, 1125 Kemper Hall Corey Wolin, 1125 Kemper Hall Lab Manager Pre-operational Checklist Before you enter the cleanroom: 1. Have you arranged training from the superuser or lab manager

Yoo, S. J. Ben

55

Optics, mask and resist implications on contact CDU  

SciTech Connect (OSTI)

Mask and condenser roughness plays important in contact CDU. Resist blur drives both dose requirements and mask specs. Correlation methods can be used to measure mask contributions to CDU.

Naulleau, Patrick

2010-06-01T23:59:59.000Z

56

Simplified models for mask roughness induced LER  

SciTech Connect (OSTI)

The ITRS requires < 1.2nm line-edge roughness (LER) for the 22nm half-pitch node. Currently, we can consistently achieve only about 3nm LER. Further progress requires understanding the principle causes of LER. Much work has already been done on how both the resist and LER on the mask effect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and factor into LER limits. Presently, mask-roughness induced LER is studied via full 2D aerial image modeling and subsequent analysis of the resulting image. This method is time consuming and cumbersome. It is, therefore, the goal of this research to develop a useful 'rule-of-thumb' analytic model for mask roughness induced LER to expedite learning and understanding.

McClinton, Brittany; Naulleau, Patrick

2011-02-21T23:59:59.000Z

57

Two-dimensional Photonic Crystals Fabricated by Nanoimprint Lithography  

E-Print Network [OSTI]

We report on the process parameters of nanoimprint lithography (NIL) for the fabrication of two-dimensional (2-D) photonic crystals. The nickel mould with 2-D photonic crystal patterns covering the area up to 20mm² is ...

Chen, A.

58

Achieving sub-10-nm resolution using scanning electron beam lithography  

E-Print Network [OSTI]

Achieving the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications have driven demand for ...

Cord, Bryan M. (Bryan Michael), 1980-

2009-01-01T23:59:59.000Z

59

Protective mask for airborne toxic substances  

SciTech Connect (OSTI)

A protective mask is described which includes a one-piece face piece molded of a transparent elastomer. A visor in the face piece provides panoramic visibility and is resilient enough to deform under applied force to permit improved use of optical devices. Identical left and right cheek fittings permit installation of a canister on either side so that the same mask can be used by right-handed and left-handed wearers voice for use with a telephone and the like. Air deflectors inside the mask adjacent the left and right cheek fittings deflect de-foging air along the inside surface of the visor when either left or right or both cheek fittings are used for attachment of a canister. A sealing adapter permits sealing around earpiece shafts of eyeglasses.

Shoemaker, C.J.; Scavnicky, J.A.; Little, M.E.; Hagy, E.M.; Bloom, A.

1983-10-21T23:59:59.000Z

60

Masking line foregrounds in intensity mapping surveys  

E-Print Network [OSTI]

We address the problem of line confusion in intensity mapping surveys and explore the possibility to mitigate line foreground contamination by progressively masking the brightest pixels in the observed map. We consider experiments targeting CO(1-0) at $z=3$, Ly$\\alpha$ at $z=7$, and CII at $z=7$, and use simulated intensity maps, which include both clustering and shot noise components of the signal and possible foregrounds, in order to test the efficiency of our method. We find that for CO and Ly$\\alpha$ it is quite possible to remove most of the foreground contribution from the maps via only 1%-3% pixel masking. The CII maps will be more difficult to clean, however, due to instrumental constraints and the high-intensity foreground contamination involved. While the masking procedure sacrifices much of the astrophysical information present in our maps, we demonstrate that useful cosmological information in the targeted lines can be successfully retrieved.

Breysse, Patrick C; Kamionkowski, Marc

2015-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

X-ray lithography using holographic images  

DOE Patents [OSTI]

A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

Howells, Malcolm R. (Berkeley, CA); Jacobsen, Chris (Sound Beach, NY)

1995-01-01T23:59:59.000Z

62

Pattern-placement-error detection for spatial-phase-locked e-beam lithography (SPLEBL)  

E-Print Network [OSTI]

Spatial-phase-locked electron-beam lithography (SPLEBL) is a new paradigm for scanning electron-beam lithography (SEBL) that permits nanometer-level pattern placement accuracy. Unlike conventional SEBL systems which run ...

Caramana, Cynthia L. (Cynthia Louise), 1978-

2004-01-01T23:59:59.000Z

63

Automated mask creation from a 3D model using Faethm.  

SciTech Connect (OSTI)

We have developed and implemented a method which given a three-dimensional object can infer from topology the two-dimensional masks needed to produce that object with surface micro-machining. The masks produced by this design tool can be generic, process independent masks, or if given process constraints, specific for a target process. This design tool calculates the two-dimensional mask set required to produce a given three-dimensional model by investigating the vertical topology of the model.

Schiek, Richard Louis; Schmidt, Rodney Cannon

2007-11-01T23:59:59.000Z

64

E-Print Network 3.0 - aperture lithography ppal Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Department of Electrical and Computer Engineering, University of Connecticut Collection: Engineering 26 Immersion fluids for lithography: refractive index measurement using...

65

BAYESIAN RELIABILITY MODELING FOR MASKED SYSTEM LIFETIME DATA  

E-Print Network [OSTI]

BAYESIAN RELIABILITY MODELING FOR MASKED SYSTEM LIFETIME DATA Lynn KUO \\Lambda Department to fail. The objective is to make inferences for the reliability of the components. In this paper we Title: Reliability Inference for Masked System Lifetime Data. 1. Introduction In the masked system

Kuo, Lynn

66

Digital Material Fabrication Using Mask-Image-Projection-based Stereolithography  

E-Print Network [OSTI]

1/16 Digital Material Fabrication Using Mask-Image-Projection- based Stereolithography Chi Zhou/methodology/approach ­ A two-channel system design is presented for the multi-material mask-image- projection of the developed multi-material mask-image-projection-based Stereolithography process. Research limitations

Chen, Yong

67

Condenser for extreme-UV lithography with discharge source  

SciTech Connect (OSTI)

Condenser system, for use with a ringfield camera in projection lithography, employs quasi grazing-incidence collector mirrors that are coated with a suitable reflective metal such as ruthenium to collect radiation from a discharge source to minimize the effect of contaminant accumulation on the collecting mirrors.

Sweatt, William C. (Albuquerque, NM); Kubiak, Glenn D. (Livermore, CA)

2001-01-01T23:59:59.000Z

68

Diffractive element in extreme-UV lithography condenser  

DOE Patents [OSTI]

Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

Sweatt, William C. (Albuquerque, NM); Ray-Chaudhurl, Avijit K. (Livermore, CA)

2000-01-01T23:59:59.000Z

69

Ultratech Develops an Improved Lithography Tool for LED Wafer Manufacturing  

Broader source: Energy.gov [DOE]

Ultratech modified an existing lithography tool used for semiconductor manufacturing to better meet the cost and performance targets of the high-brightness LED manufacturing industry. The goal was to make the equipment compatible with the wide range of substrate diameters and thicknesses prevalent in the industry while reducing the capital cost and the overall cost of ownership (COO).

70

Diffractive element in extreme-UV lithography condenser  

DOE Patents [OSTI]

Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

Sweatt, William C. (Albuquerque, NM); Ray-Chaudhuri, Avijit (Livermore, CA)

2001-01-01T23:59:59.000Z

71

Digital microfluidics using soft lithography{ John Paul Urbanski,a  

E-Print Network [OSTI]

Digital microfluidics using soft lithography{ John Paul Urbanski,a William Thies,b Christopher published as an Advance Article on the web 29th November 2005 DOI: 10.1039/b510127a Although microfluidic software to drive the pumps, valves, and electrodes used to manipulate fluids in microfluidic devices

Amarasinghe, Saman

72

Removable pellicle for lithographic mask protection and handling  

DOE Patents [OSTI]

A removable pellicle for a lithographic mask that provides active and robust particle protection, and which utilizes a traditional pellicle and two deployments of thermophoretic protection to keep particles off the mask. The removable pellicle is removably attached via a retaining structure to the mask substrate by magnetic attraction with either contacting or non-contacting magnetic capture mechanisms. The pellicle retaining structural is composed of an anchor piece secured to the mask substrate and a frame member containing a pellicle. The anchor piece and the frame member are in removable contact or non-contact by the magnetic capture or latching mechanism. In one embodiment, the frame member is retained in a floating (non-contact) relation to the anchor piece by magnetic levitation. The frame member and the anchor piece are provided with thermophoretic fins which are interdigitated to prevent particles from reaching the patterned area of the mask. Also, the anchor piece and mask are maintained at a higher temperature than the frame member and pellicle which also prevents particles from reaching the patterned mask area by thermophoresis. The pellicle can be positioned over the mask to provide particle protection during mask handling, inspection, and pumpdown, but which can be removed manually or robotically for lithographic use of the mask.

Klebanoff, Leonard E. (Dublin, CA); Rader, Daniel J. (Albuquerque, NM); Hector, Scott D. (Oakland, CA); Nguyen, Khanh B. (Sunnyvale, CA); Stulen, Richard H. (Livermore, CA)

2002-01-01T23:59:59.000Z

73

Solving Maximum-Entropy Sampling Problems Using Factored Masks  

E-Print Network [OSTI]

Mar 2, 2005 ... Abstract: We present a practical approach to Anstreicher and Lee's masked spectral bound for maximum-entropy sampling, and we describe ...

Samuel Burer

2005-03-02T23:59:59.000Z

74

A masked spectral bound for maximum-entropy sampling  

E-Print Network [OSTI]

Sep 16, 2003 ... Abstract: We introduce a new masked spectral bound for the maximum-entropy sampling problem. This bound is a continuous generalization of ...

Kurt Anstreicher

2003-09-16T23:59:59.000Z

75

EFFECT OF MASKED REGIONS ON WEAK-LENSING STATISTICS  

SciTech Connect (OSTI)

Sky masking is unavoidable in wide-field weak-lensing observations. We study how masks affect the measurement of statistics of matter distribution probed by weak gravitational lensing. We first use 1000 cosmological ray-tracing simulations to examine in detail the impact of masked regions on the weak-lensing Minkowski Functionals (MFs). We consider actual sky masks used for a Subaru Suprime-Cam imaging survey. The masks increase the variance of the convergence field and the expected values of the MFs are biased. The bias then compromises the non-Gaussian signals induced by the gravitational growth of structure. We then explore how masks affect cosmological parameter estimation. We calculate the cumulative signal-to-noise ratio (S/N) for masked maps to study the information content of lensing MFs. We show that the degradation of S/N for masked maps is mainly determined by the effective survey area. We also perform simple {chi}{sup 2} analysis to show the impact of lensing MF bias due to masked regions. Finally, we compare ray-tracing simulations with data from a Subaru 2 deg{sup 2} survey in order to address if the observed lensing MFs are consistent with those of the standard cosmology. The resulting {chi}{sup 2}/n{sub dof} = 29.6/30 for three combined MFs, obtained with the mask effects taken into account, suggests that the observational data are indeed consistent with the standard {Lambda}CDM model. We conclude that the lensing MFs are a powerful probe of cosmology only if mask effects are correctly taken into account.

Shirasaki, Masato; Yoshida, Naoki [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Hamana, Takashi, E-mail: masato.shirasaki@utap.phys.s.u-tokyo.ac.jp [National Astronomical Observatory of Japan, Tokyo 181-0015 (Japan)

2013-09-10T23:59:59.000Z

76

Large-Area Zone Plate Fabrication with Optical Lithography  

SciTech Connect (OSTI)

Zone plates as condenser optics for x-ray microscopes offer simple optical designs for both illumination and spectral resolution when used as a linear monochromator. However, due to the long write times for electron beam lithography, both the availability and the size of zone plates for condensers have been limited. Since the resolution provided by the linear monochromator scales almost linearly with the diameter of the zone plate, the full potential for zone plate monochromators as illumination systems for x-ray microscopes has not been achieved. For example, the 10-mm-diameter zone plate has demonstrated a spectral resolution of E/{Delta}E = 700[1], but with a 26-mm-diameter zone plate, the calculated spectral resolution is higher than E/{Delta}E = 3000. These large-area zone plates are possible to fabricate with the leading edge semiconductor lithography tools such as those available at the College of Nanoscale Science and Engineering at the University at Albany. One of the lithography tools available is the ASML TWINSCAN XT: 1950i with 37-nm resolution [2]. A single 300-mm wafer can contain more than 60 fields, each with a large area condenser, and the throughput of the tool can be more than one wafer every minute.

Denbeaux, G. [College of Nanoscale Science and Engineering, University at Albany, 255 Fuller Road, Albany, NY 12203 (United States)

2011-09-09T23:59:59.000Z

77

Low Cost Lithography Tool for High Brightness LED Manufacturing  

SciTech Connect (OSTI)

The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

Andrew Hawryluk; Emily True

2012-06-30T23:59:59.000Z

78

Resolution limits and process latitude of comformable contact nano-lithography  

E-Print Network [OSTI]

Conformable Contact Lithography enables researchers to attain high-resolution lithographic patterning at manageable cost. This thesis characterizes the minimum resolvable feature size and process latitude of Conformable ...

Fucetola, Corey Patrick

2007-01-01T23:59:59.000Z

79

Nodal photolithography : lithography via far-field optical nodes in the resist  

E-Print Network [OSTI]

In this thesis, I investigate one approach - stimulated emission depletion - to surmounting the diffraction limitation of optical lithography. This approach uses farfield optical nodes to orchestrate reversible, saturable ...

Winston, Donald, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

80

Bunch Profiling Using a Rotating Mask  

SciTech Connect (OSTI)

The current method for measuring profiles of proton bunches in accelerators is severely lacking. One must dedicate a great deal of time and expensive equipment to achieve meaningful results. A new method to complete this task uses a rotating mask with slots of three different orientations to collect this data. By scanning over the beam in three different directions, a complete profile for each bunch is built in just seconds, compared to the hours necessary for the previous method. This design was successfully tested using synchrotron radiation emitted by SPEAR3. The profile of the beam was measured in each of the three desired directions. Due to scheduled beam maintenance, only one set of data was completed and more are necessary to solve any remaining issues. The data collected was processed and all of the RMS sizes along the major and minor axes, as well as the tilt of the beam ellipse were measured.

Miller, Mitchell; /SLAC /IIT, Chicago

2012-08-24T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Gray scale x-ray mask  

DOE Patents [OSTI]

The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

Morales, Alfredo M. (Livermore, CA); Gonzales, Marcela (Seattle, WA)

2006-03-07T23:59:59.000Z

82

Low thermal distortion extreme-UV lithography reticle  

DOE Patents [OSTI]

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

2001-01-01T23:59:59.000Z

83

Low thermal distortion extreme-UV lithography reticle  

DOE Patents [OSTI]

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

2002-01-01T23:59:59.000Z

84

Low thermal distortion Extreme-UV lithography reticle and method  

DOE Patents [OSTI]

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

2002-01-01T23:59:59.000Z

85

Computer-Aided Design for Microfluidic Chips Based on Multilayer Soft Lithography  

E-Print Network [OSTI]

Computer-Aided Design for Microfluidic Chips Based on Multilayer Soft Lithography Nada Amin1 Abstract-- Microfluidic chips are emerging as a powerful platform for automating biology experiments automation techniques for microfluidic chips based on multilayer soft lithography. We focus our attention

Rajamani, Sriram K.

86

header for SPIE use Fluoropolymers for 157nm Lithography: Optical Properties from VUV  

E-Print Network [OSTI]

new radiation damage mechanisms in previously accepted optical materials. For 157 nm pellicles, newheader for SPIE use Fluoropolymers for 157nm Lithography: Optical Properties from VUV Absorbance With the introduction of 157 nm as the next optical lithography wavelength, the need for new pellicle and photoresist

Rollins, Andrew M.

87

A microfluidic microbial fuel cell fabricated by soft lithography Fang Qian a,b,  

E-Print Network [OSTI]

A microfluidic microbial fuel cell fabricated by soft lithography Fang Qian a,b, , Zhen He c microfluidic microbial fuel cell (MFC) platform built by soft-lithography tech- niques. The MFC design includes a unique sub-5 lL polydimethylsiloxane soft chamber featuring carbon cloth electrodes and microfluidic

88

A laser triggered vacuum spark x-ray lithography source  

E-Print Network [OSTI]

ionized state or the physical processes occurring 15 in a high temperature plasma. There are many advantages to the use of the vacuum spark as an x-ray source; the simplicity of the machine is one. The x-ray output is within the range usable for x-ray... spark apparatus ha- been studied here to determine its applicability to x-ray lithography. A capacitor which stored approximately 3 KJ supplied most of the energy for the plasma. A Nd-YAG laser was used to supply electrons and metallic atoms...

Keating, Richard Allen

1987-01-01T23:59:59.000Z

89

Low-cost method for producing extreme ultraviolet lithography optics  

DOE Patents [OSTI]

Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

Folta, James A. (Livermore, CA); Montcalm, Claude (Fort Collins, CO); Taylor, John S. (Livermore, CA); Spiller, Eberhard A. (Mt. Kisco, NY)

2003-11-21T23:59:59.000Z

90

Self-cleaning optic for extreme ultraviolet lithography  

DOE Patents [OSTI]

A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

Klebanoff, Leonard E.; Stulen, Richard H.

2003-12-16T23:59:59.000Z

91

Quantum lithography with classical light: Generation of arbitrary patterns  

E-Print Network [OSTI]

Quantum lithography with classical light: Generation of arbitrary patterns Qingqing Sun,1,2 Philip R. Hemmer,3 and M. Suhail Zubairy1,2 1Department of Physics and Institute of Quantum Studies, Texas A&M University, College Station, Texas 77843..., Phys. Rev. Lett. 85, 2733 #1;2000#2;. #3;7#4; S. Kawata, H.-B. Sun, T. Tanaka, and K. Takada, Nature #1;Lon- don#2; 412, 697 #1;2001#2;. #3;8#4; M. D?Angelo, M. V. Chekhova, and Y. Shih, Phys. Rev. Lett. 87, 013602 #1;2001#2;. #3;9#4; A. Pe?er, B...

Sun, Qingqing; Hemmer, Philip R.; Zubairy, M. Suhail

2007-01-01T23:59:59.000Z

92

Electrodeposition of nickel oxyhydroxide films through polymer masks  

SciTech Connect (OSTI)

Electrochromic materials have attracted much attention for devices including ``smart windows`` and displays. Nickel oxyhydroxide films were electrodeposited through gelatin masks, whose thicknesses may control the optical transmittances of the deposited electrochromic films. The difference of transmittance, {Delta}T{sub 540}, between bleaching and coloration states at wavelength of 540 nm has a linear relationship with the gelatin mask thickness. {Delta}T{sub 540} increased if nickel oxyhydroxide was prepared in agitated electrolyte. The electrodeposited films, prepared with gelatin masks, may have higher stability. These results showed the feasibility of fabricating an electrochromic device with a controlled image whose contrast and brightness are adjustable with potential or current.

Yang, M.C.; Lin, C.K.; Su, C.L. [National Cheng Kung Univ., Tainan (Taiwan, Province of China). Dept. of Chemical Engineering

1995-04-01T23:59:59.000Z

93

SIGNAL MASKING IN GAUSSIAN CHANNELS John A. Quinn  

E-Print Network [OSTI]

and masking noise pollution. We present results as to how this can be done efficiently, assuming that we have. We also discuss the ap- plication of the theory to acoustic signals, where we consider aspects

Edinburgh, University of

94

Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics  

DOE Patents [OSTI]

A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser`s wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known ``feature masks`` of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects. 29 figs.

Ellingson, W.A.; Brada, M.P.

1995-06-20T23:59:59.000Z

95

Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics  

DOE Patents [OSTI]

A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser's wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known "feature masks" of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects.

Ellingson, William A. (Naperville, IL); Brada, Mark P. (Goleta, CA)

1995-01-01T23:59:59.000Z

96

P.7 / G. Yoo A Maskless Laser-Write Lithography Processing of Thin-Film Transistors  

E-Print Network [OSTI]

and solar-cell panel processing, as substrate sizes increase, the cost of mask fabrication rapidly increases

Kanicki, Jerzy

97

Bubble masks for time-encoded imaging of fast neutrons.  

SciTech Connect (OSTI)

Time-encoded imaging is an approach to directional radiation detection that is being developed at SNL with a focus on fast neutron directional detection. In this technique, a time modulation of a detected neutron signal is induced-typically, a moving mask that attenuates neutrons with a time structure that depends on the source position. An important challenge in time-encoded imaging is to develop high-resolution two-dimensional imaging capabilities; building a mechanically moving high-resolution mask presents challenges both theoretical and technical. We have investigated an alternative to mechanical masks that replaces the solid mask with a liquid such as mineral oil. Instead of fixed blocks of solid material that move in pre-defined patterns, the oil is contained in tubing structures, and carefully introduced air gaps-bubbles-propagate through the tubing, generating moving patterns of oil mask elements and air apertures. Compared to current moving-mask techniques, the bubble mask is simple, since mechanical motion is replaced by gravity-driven bubble propagation; it is flexible, since arbitrary bubble patterns can be generated by a software-controlled valve actuator; and it is potentially high performance, since the tubing and bubble size can be tuned for high-resolution imaging requirements. We have built and tested various single-tube mask elements, and will present results on bubble introduction and propagation as a function of tubing size and cross-sectional shape; real-time bubble position tracking; neutron source imaging tests; and reconstruction techniques demonstrated on simple test data as well as a simulated full detector system.

Brubaker, Erik; Brennan, James S.; Marleau, Peter; Nowack, Aaron B.; Steele, John; Sweany, Melinda; Throckmorton, Daniel J.

2013-09-01T23:59:59.000Z

98

E-Print Network 3.0 - actinic euvl mask Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

lithography (EUVL) ... Source: Lawrence Berkeley National Laboratory, Center for X-Ray Optics, EUV Interferometry Collection: Physics 3 High sensitivity actinic detection of native...

99

Method for the protection of extreme ultraviolet lithography optics  

DOE Patents [OSTI]

A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH3 and H2S. The use of PH3 and H2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

2010-06-22T23:59:59.000Z

100

Development of a microfluidic device for patterning multiple species by scanning probe lithography  

E-Print Network [OSTI]

Scanning Probe Lithography (SPL) is a versatile nanofabrication platform that leverages microfluidic “ink” delivery systems with Scanning Probe Microscopy (SPM) for generating surface-patterned chemical functionality on the sub-100 nm length scale...

Rivas Cardona, Juan Alberto

2009-06-02T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Contact region fidelity, sensitivity, and control in roll-based soft lithography  

E-Print Network [OSTI]

Soft lithography is a printing process that uses small features on an elastomeric stamp to transfer micron and sub-micron patterns to a substrate. Translating this lab scale process to a roll-based manufacturing platform ...

Petrzelka, Joseph E

2012-01-01T23:59:59.000Z

102

BAYESIAN INSIGHTS ON DISCLOSURE LIMITATION: MASK OR IMPUTE?  

SciTech Connect (OSTI)

Statistical agencies seek to disseminate useful data while keeping low the risk of statistical confidentiality disclosure. Recognizing that reidentification of data is generally inadequate to protect its confidentiality against attack by a data snooper, agencies restrict the data they release for general use. Typically, these restricted data procedures have involved transformation or masking of the original, collected data through such devices as adding noise, topcoding, data swapping, and recoding. Recently, proposals have been put forth for the release of synthetic data, simulated from models constructed from the original data. This paper gives a framework for the comparison of masking and synthetic data as two approaches to disclosure limitation. Particular attention is paid to data utility and disclosure risk. Examples of instantiation of masking and of synthetic data construction are provided to illustrate the concepts. Particular attention is paid to data swapping. Insights drawn from the Bayesian paxadigm are provided.

S. KELLER-MCNULTY; G. DUNCAN

2000-10-01T23:59:59.000Z

103

X-ray mask and method for providing same  

DOE Patents [OSTI]

The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.

Morales, Alfredo M. (Pleasanton, CA); Skala, Dawn M. (Fremont, CA)

2004-09-28T23:59:59.000Z

104

X-ray mask and method for providing same  

DOE Patents [OSTI]

The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.

Morales, Alfredo M. (Pleasanton, CA); Skala, Dawn M. (Fremont, CA)

2002-01-01T23:59:59.000Z

105

System for generating two-dimensional masks from a three-dimensional model using topological analysis  

DOE Patents [OSTI]

A method of generating two-dimensional masks from a three-dimensional model comprises providing a three-dimensional model representing a micro-electro-mechanical structure for manufacture and a description of process mask requirements, reducing the three-dimensional model to a topological description of unique cross sections, and selecting candidate masks from the unique cross sections and the cross section topology. The method further can comprise reconciling the candidate masks based on the process mask requirements description to produce two-dimensional process masks.

Schiek, Richard (Albuquerque, NM)

2006-06-20T23:59:59.000Z

106

Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes  

SciTech Connect (OSTI)

This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fitting the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.

Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun; Chen, Fu-Rong; Tsai, Chuen-Horng [Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, 300 Taiwan (China); Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China)

2010-07-15T23:59:59.000Z

107

Ga lithography in sputtered niobium for superconductive micro and nanowires  

SciTech Connect (OSTI)

This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert [Sandia National Labs, MESA Facility, P.O. Box 5800, Albuquerque, New Mexico 87185-1084 (United States)

2014-08-18T23:59:59.000Z

108

Masking Property of Quantum Random Cipher with Phase Mask Encryption -Towards Quantum Enigma Cipher-  

E-Print Network [OSTI]

The security analysis of physical encryption protocol based on coherent pulse position modulation(CPPM) originated by Yuen is one of the most interesting topics in the study of cryptosystem with a security level beyond the Shannon limit. Although the implementation of CPPM scheme has certain difficulty, several methods have been proposed recently. This paper deals with the CPPM encryption in terms of symplectic transformation, which includes a phase mask encryption as a special example, and formulates a unified security analysis for such encryption schemes. Specifically, we give a lower bound of Eve's symbol error probability using reliability function theory to ensure that our proposed system exceeds the Shannon limit. Then we assume the secret key is given to Eve after her heterodyne measurement. Since this assumption means that Eve has a great advantage in the sense of the conventional cryptography, the lower bound of her error indeed ensures the security level beyond the Shannon limit. In addition, we show some numerical examples of the security performance.

Masaki Sohma; Osamu Hirota

2014-04-18T23:59:59.000Z

109

Soft Lithography Using Acryloxy Perfluoropolyether Composite Tu T. Truong, Rongsheng Lin, Seokwoo Jeon, Hee Hyun Lee, Joana Maria,  

E-Print Network [OSTI]

Soft Lithography Using Acryloxy Perfluoropolyether Composite Stamps Tu T. Truong, Rongsheng Lin composite patterning elements that use a commercially available acryloxy perfluoropolyether (a

Rogers, John A.

110

Adaptive Streaming and Rendering of Large Terrains using Strip Masks  

E-Print Network [OSTI]

Adaptive Streaming and Rendering of Large Terrains using Strip Masks Joachim Pouderoux Jean-Eudes Marvie IPARLA Project (LaBRI - INRIA Futurs) University of Bordeaux, France Abstract Terrain rendering is an important factor in the rendering of virtual scenes. If they are large and detailed, digital terrains can

Paris-Sud XI, Université de

111

The rhetorical mask as an aid to composition  

E-Print Network [OSTI]

, it can be demonstrated that professional writers do use a rhetorical mask. A short essay from The Norton Reader, "Pop Angler, " will be used to illustrate this idea; the opening paragraphs are quoted in order to show that the persona is established...

Bovey, Shirley Ellen

1972-01-01T23:59:59.000Z

112

State Amplification and State Masking for the Binary Energy Harvesting Channel  

E-Print Network [OSTI]

State Amplification and State Masking for the Binary Energy Harvesting Channel Kaya Tutuncuoglu1 its energy harvests. Specifically, we study state amplification and state masking, which define- spectively. For an independent and identically distributed energy harvesting process, we first find

Yener, Aylin

113

Fundamentals of embossing nanoimprint lithography in polymer substrates.  

SciTech Connect (OSTI)

The convergence of micro-/nano-electromechanical systems (MEMS/NEMS) and biomedical industries is creating a need for innovation and discovery around materials, particularly in miniaturized systems that use polymers as the primary substrate. Polymers are ubiquitous in the microelectronics industry and are used as sensing materials, lithography tools, replication molds, microfluidics, nanofluidics, and biomedical devices. This diverse set of operational requirements dictates that the materials employed must possess different properties in order to reduce the cost of production, decrease the scale of devices to the appropriate degree, and generate engineered devices with new functional properties at cost-competitive levels of production. Nanoscale control of polymer deformation at a massive scale would enable breakthroughs in all of the aforementioned applications, but is currently beyond the current capabilities of mass manufacturing. This project was focused on developing a fundamental understanding of how polymers behave under different loads and environments at the nanoscale in terms of performance and fidelity in order to fill the most critical gaps in our current knowledgebase on this topic.

Simmons, Blake Alexander; King, William P. (University of Illinois, Urbana IL)

2011-02-01T23:59:59.000Z

114

Printing microchips Lithography is used in the manufacture of integrated circuits (ICs) to transfer circuit patterns from a mask to the silicon wafer.  

E-Print Network [OSTI]

; - manufactured and assembled to maximize the imaging efficiency and to reduce distortion; Laser - a high power visible and EUV illumination; Condenser Optics - collects and shapes the EUV beam into a field of 114

115

Submitted to Biosystems 6.12.2003 A MODEL OF VISUAL BACKWARD MASKING.  

E-Print Network [OSTI]

connections, which turn out to support prolonged self-sustained activity. Masking is assumed to arise from

Bugmann, Guido

116

Analysis of Optics and Mask Contamination in SEMATECH EUV Micro-Exposure Tools  

E-Print Network [OSTI]

Analysis of Optics and Mask Contamination in SEMATECHMioro^Exposure Tools IEUVI Optics Contamination/Lifetime TWG

Wuest, Andrea

2008-01-01T23:59:59.000Z

117

E-Print Network 3.0 - annual assembly american Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nanolithography for ece138L Summary: CP) Nanoimprinting lithography (NIL) Ink-Jet printing Self-assembly Nano-mask lithography Molecular ruler etc... -contact lithography...

118

ROBUST CONTENT-BASED VIDEO WATERMARKING EXPLOITING MOTION ENTROPY MASKING EFFECT  

E-Print Network [OSTI]

ROBUST CONTENT-BASED VIDEO WATERMARKING EXPLOITING MOTION ENTROPY MASKING EFFECT Amir Houmansadr: Digital watermarking, Video sequence, Entropy masking. Abstract: A major class of image and video, a content-based video watermarking scheme is developed and the concept of entropy masking effect is employed

Reif, Rafael

119

Virtually distortion-free imaging system for large field, high resolution lithography  

DOE Patents [OSTI]

Virtually distortion free large field high resolution imaging is performed using an imaging system which contains large field distortion or field curvature. A reticle is imaged in one direction through the optical system to form an encoded mask. The encoded mask is then imaged back through the imaging system onto a wafer positioned at the reticle position.

Hawryluk, A.M.; Ceglio, N.M.

1993-01-05T23:59:59.000Z

120

Affine Defects and Gravitation  

E-Print Network [OSTI]

We argue that the structure general relativity (GR) as a theory of affine defects is deeper than the standard interpretation as a metric theory of gravitation. Einstein-Cartan theory (EC), with its inhomogenous affine symmetry, should be the standard-bearer for GR-like theories. A discrete affine interpretation of EC (and gauge theory) yields topological definitions of momentum and spin (and Yang Mills current), and their conservation laws become discrete topological identities. Considerations from quantum theory provide evidence that discrete affine defects are the physical foundation for gravitation.

R. J. Petti

2014-12-12T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Indus-2 X-ray lithography beamline for X-ray optics and material science applications  

SciTech Connect (OSTI)

X-ray lithography is an ideal technique by which high aspect ratio and high spatial resolution micro/nano structures are fabricated using X-rays from synchrotron radiation source. The technique has been used for fabricating optics (X-ray, visible and infrared), sensors and actuators, fluidics and photonics. A beamline for X-ray lithography is operational on Indus-2. The beamline offers wide lithographic window from 1-40keV photon energy and wide beam for producing microstructures in polymers upto size ?100mm × 100mm. X-ray exposures are possible in air, vacuum and He gas environment. The air based exposures enables the X-ray irradiation of resist for lithography and also irradiation of biological and liquid samples.

Dhamgaye, V. P., E-mail: vishal@rrcat.gov.in; Lodha, G. S., E-mail: vishal@rrcat.gov.in [Indus Synchrotrons Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

2014-04-24T23:59:59.000Z

122

Micropulse Lidar Cloud Mask Value-Added Product Technical Report  

SciTech Connect (OSTI)

Lidar backscattered signal is a useful tool for identifying vertical cloud structure in the atmosphere in optically thin clouds. Cloud boundaries derived from lidar signals are a necessary input for popular ARM data products, such as the Active Remote Sensing of Clouds (ARSCL) product. An operational cloud boundary algorithm (Wang and Sassen 2001) has been implemented for use with the ARM Micropulse Lidar (MPL) systems. In addition to retrieving cloud boundaries above 500 m, the value-added product (VAP) named Micropulse Lidar Cloud Mask (MPLCMASK) applies lidar-specific corrections (i.e., range-square, background, deadtime, and overlap) as described in Campbell et al. (2002) to the measured backscattered lidar. Depolarization ratio is computed using the methodology developed by Flynn et al. (2007) for polarization-capable MPL systems. The cloud boundaries output from MPLCMASK will be the primary lidar cloud mask for input to the ARSCL product and will be applied to all MPL systems, including historical data sets.

Sivaraman, C; Comstock, J

2011-07-25T23:59:59.000Z

123

Corner Rounding in Photoresists for Extreme Ultraviolet Lithography  

SciTech Connect (OSTI)

Deprotection blur in EUV resists fundamentally limits the smallest sized dense features that can be patterned in a single exposure and development step. Several metrics have recently been developed to explore the ways that different resist and process parameters affect the deprotection blur in EUV resists. One of these metrics is based on the imaging fidelity of a sharp corner on a large feature. As this metric has involved the close inspection of printing fidelity of corner features, it has brought attention to an interesting phenomena: corners print differently whether or not the remaining resist edge contains 270 degrees of resist or 90 degrees of resist. Here we present experimental data across a wide sampling of leading resists to show this effect is real and reproducible. They provide aerial image modeling results assuming thin and realistic mask models that show no corner bias between the aerial images in the 90-degree and 270-degree configurations. They also compare modeled patterning results assuming several resist models including the single blur, dual blur, and Prolith models, none of which reproduce the corner biasing that is observed experimentally.

Anderson, Christopher N.; Naulleau, Patrick; Deng, Yunfei; Wallow, Thomas

2008-06-01T23:59:59.000Z

124

Defect mapping system  

DOE Patents [OSTI]

Apparatus for detecting and mapping defects in the surfaces of polycrystalline materials in a manner that distinguishes dislocation pits from grain boundaries includes a laser for illuminating a wide spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate rastor mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. 20 figures.

Sopori, B.L.

1995-04-11T23:59:59.000Z

125

Magnetic anisotropy in a permalloy microgrid fabricated by near-field optical lithography  

SciTech Connect (OSTI)

We report the fabrication and magnetic properties of permalloy microgrids prepared by near-field optical lithography and characterized using high-sensitivity magneto-optical Kerr effect techniques. A fourfold magnetic anisotropy induced by the grid architecture is identified. {copyright} 2001 American Institute of Physics.

Li, S. P.; Lebib, A.; Peyrade, D.; Natali, M.; Chen, Y.; Lew, W. S.; Bland, J. A. C.

2001-07-01T23:59:59.000Z

126

Proton Beam Lithography at the University of Surrey's Ion Beam Centre , I. Gomez-Morilla  

E-Print Network [OSTI]

the Ion Scan software developed by the National University of Singapore [4]. Simulations with the SRIM in photosensitive glass [3]. This technique has clear advantages in comparison with electron beam lithography and X energy protons have a long range and a low lateral spread making them ideal for exposing thick resist

Webb, Roger P.

127

Ice-assisted electron beam lithography of graphene Jules A Gardener1  

E-Print Network [OSTI]

1 Ice-assisted electron beam lithography of graphene Jules A Gardener1 and Jene A Golovchenko1 with a thin ice layer. The irradiated ice plays a crucial role in the process by providing activated species that locally remove graphene from a silicon dioxide substrate. After patterning the graphene, the ice resist

128

Flexible CO2 laser system for fundamental research related to an extreme ultraviolet lithography source  

E-Print Network [OSTI]

Flexible CO2 laser system for fundamental research related to an extreme ultraviolet lithography 2009; published online 10 December 2009 A CO2 laser system with flexible parameters was developed 1010 W/cm2 . Utilizing this CO2 MOPA laser system, high conversion efficiency from laser to in-band 2

Najmabadi, Farrokh

129

Fabrication of magnetic microfiltration systems using soft lithography Tao Deng, Mara Prentiss,a)  

E-Print Network [OSTI]

. The combination of microtransfer molding--a soft lithography technique--and electrodeposition generated nickel, Massachusetts 02138 Received 9 August 2001; accepted for publication 9 November 2001 Arrays of nickel posts were field from an external, permanent, neodymium­iron­boron magnet, these nickel posts generated strong

Prentiss, Mara

130

Low-voltage spatial-phase-locked scanning-electron-beam lithography  

E-Print Network [OSTI]

Spatial-phase-locked electron-beam lithography (SPLEBL) is a method that tracks and corrects the position of an electron-beam in real-time by using a reference grid placed above the electron-beam resist. In this thesis, ...

Cheong, Lin Lee

2010-01-01T23:59:59.000Z

131

Toward Optimized Light Utilization in Nanowire Arrays Using Scalable Nanosphere Lithography and Selected Area Growth  

E-Print Network [OSTI]

can have application in high-throughput and low-cost optoelectronic devices, including solar cellsToward Optimized Light Utilization in Nanowire Arrays Using Scalable Nanosphere Lithography promising results when used to fabricate light emitters6-10 and photovoltaic devices.11-15 The small contact

Zhou, Chongwu

132

Sub-10 nm imprint lithography and applications Stephen Y. Chou,a)  

E-Print Network [OSTI]

, Lingjie Guo, and Lei Zhuang NanoStructure Laboratory, Department of Electrical Engineering, University on its surface is pressed into a thin resist cast on a substrate. The resist, a thermal plastic into the entire resist. Since imprint lithography is not based on modification of resist chemical structure

133

Confinement and flow dynamics in thin polymer films for nanoimprint lithography  

E-Print Network [OSTI]

a soft film resist deposited on the surface, the film material flows into the mask features in methyl-isobutyl- ketone. The residual stresses and residual solvent in the film were minimized

Boyer, Edmond

134

Methane Digesters and Biogas Recovery - Masking the Environmental Consequences of Industrial Concentrated Livestock Production  

E-Print Network [OSTI]

DIGESTERS AND BIOGAS RECOVERY Digesters Do Not Address theMethane Digesters and Biogas Recovery-Masking theII. METHANE DIGESTERS AND BIOGAs RECOVERY- IN THE

Di Camillo, Nicole G.

2011-01-01T23:59:59.000Z

135

E-Print Network 3.0 - aperture masking interferometry Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

masking interferometry Page: << < 1 2 3 4 5 > >> 1 INTERFEROMETRY FOLLOWING ADAPTIVE OPTICS Department of Physics, Technion, Haifa 32000, Israel Summary: frequency adaptive...

136

Methane Digesters and Biogas Recovery - Masking the Environmental Consequences of Industrial Concentrated Livestock Production  

E-Print Network [OSTI]

Methane Digesters and Biogas Recovery-Masking theII. METHANE DIGESTERS AND BIOGAs RECOVERY- IN THEA. Digesters Have Received Attention for Their Potential to

Di Camillo, Nicole G.

2011-01-01T23:59:59.000Z

137

Methane Digesters and Biogas Recovery - Masking the Environmental Consequences of Industrial Concentrated Livestock Production  

E-Print Network [OSTI]

Methane Digesters and Biogas Recovery-Masking theII. METHANE DIGESTERS AND BIOGAs RECOVERY- IN THEEVEN BEYOND MANURE-ASSOCIATED METHANE EMISSIONS, INDUSTRIAL

Di Camillo, Nicole G.

2011-01-01T23:59:59.000Z

138

Methane Digesters and Biogas Recovery - Masking the Environmental Consequences of Industrial Concentrated Livestock Production  

E-Print Network [OSTI]

Methane Digesters and Biogas Recovery-Masking theII. METHANE DIGESTERS AND BIOGAs RECOVERY- IN THE2011] METHANE DIGESTERS AND BIOGAS RECOVERY methane, and 64%

Di Camillo, Nicole G.

2011-01-01T23:59:59.000Z

139

Design and analysis of a scanning beam interference lithography system for patterning gratings with nanometer-level distortions  

E-Print Network [OSTI]

This thesis describes the design and analysis of a system for patterning large-area gratings with nanometer level phase distortions. The novel patterning method, termed scanning beam interference lithography (SBIL), uses ...

Konkola, Paul Thomas, 1973-

2003-01-01T23:59:59.000Z

140

Theoretical efficiency analysis of a condenser-embedded grating-based spectral purity filter for EUV lithography  

SciTech Connect (OSTI)

Being based on reflective optics, extreme ultraviolet (EUV) lithography systems are, in principle, relatively immune to chromatic errors. However, illumination bandwidth control is still required for EUV lithography. For example, appreciable amounts of UV power, combined with resist sensitivity to this wavelength band, would decrease image contrast. Also, appreciable amounts of IR power would place unacceptable thermal loads on the projection optics. A practical method for spectral filtering, widely used in short-wavelength synchrotron applications, is the grating monochromator. Here we present the theoretical performance analysis of a grating-based spectral purity filter integrated into an EUV lithography condenser system. Although the specific examples presented here are geared towards a specific condenser design, it should be noted that the methods described are generally applicable to a variety of condenser designs as might be found in future EUV lithography systems.

Naulleau, Patrick P.; Sweatt, William C.; Tichenor, Daniel A.

2002-09-02T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng, Duoming Wang, Dongxia Shi,  

E-Print Network [OSTI]

Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng: Fabrication of graphene nanostructures is of importance for both investigating their intrinsic physical approach for graphene nanostructures. Compared with conventional lithographic fabrication techniques

Zhang, Guangyu

142

2D and 3D periodic templates through holographic interference lithography : photonic and phononic crystals and biomimetic microlens arrays  

E-Print Network [OSTI]

In this thesis a simple technique for controlling structure via holographic interference lithography was established and implemented. Access to various space groups including such important structures as the level set ...

Ullal, Chaitanya K. (Chaitanya Kishore)

2005-01-01T23:59:59.000Z

143

Who named the quantum defect?  

SciTech Connect (OSTI)

The notion of the quantum defect is important in atomic and molecular spectroscopy and also in unifying spectroscopy with collision theory. In the latter context, the quantum defect may be viewed as an ancestor of the phase shift. However, the origin of the term quantum defect does not seem to be explained in standard textbooks. It occurred in a 1921 paper by Schroedinger, preceding quantum mechanics, yet giving the correct meaning as an index of the short-range interactions with the core of an atom. The authors present the early history of the quantum-defect idea, and sketch its recent developments.

Rau, A.R.P. [Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy; Inokuti, M. [Argonne National Lab., IL (United States). Physics Div.

1997-08-01T23:59:59.000Z

144

Orthogonal Direct Sum Masking A Smartcard Friendly Computation Paradigm in a Code,  

E-Print Network [OSTI]

analysis (FA) are nowadays well known and most designers of secure embedded systems are aware of them of masks used). A recent line of works known as Low-Entropy Masking Schemes (LEMS) has investigated could be a set of codewords, to reduce the overhead in terms of computational resources and entropy

145

Optimisation of masked ion irradiation damage profiles in YBCO thin films by Monte Carlo simulation  

E-Print Network [OSTI]

Optimisation of masked ion irradiation damage profiles in YBCO thin films by Monte Carlo simulation production with a given mask structure. The results suggest that minimum ion scattering broadening tails with beam energy up to a few hundred keV, though the throughput is intrinsically low [1]. A combination

Webb, Roger P.

146

ATOMIC FORCE LITHOGRAPHY OF NANO MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING IN AQUEOUS SOLUTIONS  

SciTech Connect (OSTI)

The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

Torres, R.; Mendez-Torres, A.; Lam, P.

2011-06-09T23:59:59.000Z

147

ATOMIC FORCE LITHOGRAPHY OF NANO/MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING OF AQUEOUS SOLUTIONS  

SciTech Connect (OSTI)

The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

Mendez-Torres, A.; Torres, R.; Lam, P.

2011-07-15T23:59:59.000Z

148

Gamma-Ray Imaging with the Coded Mask IBIS Telescope  

E-Print Network [OSTI]

The IBIS telescope onboard INTEGRAL, the ESA gamma-ray space mission to be launched in 2002, is a soft gamma-ray (20 keV - 10 MeV) device based on a coded aperture imaging system. We describe here basic concepts of coded masks, the imaging system of the IBIS telescope, and the standard data analysis procedures to reconstruct sky images. This analysis includes, for both the low-energy detector layer (ISGRI) and the high energy layer (PICSIT), iterative procedures which decode recorded shadowgrams, search for and locate sources, clean for secondary lobes, and then rotate and compose sky images. These procedures will be implemented in the Quick Look and Standard Analysis of the INTEGRAL Science Data Center (ISDC) as IBIS Instrument Specific Software.

Goldwurm, A; Gros, A; Stephen, J; Foschini, L; Gianotti, F; Natalucci, L; De Cesare, G; Santo, M D

2000-01-01T23:59:59.000Z

149

Defect dynamics in active nematics  

E-Print Network [OSTI]

Topological defects are distinctive signatures of liquid crystals. They profoundly affect the viscoelastic behavior of the fluid by constraining the orientational structure in a way that inevitably requires global changes not achievable with any set of local deformations. In active nematic liquid crystals topological defects not only dictate the global structure of the director, but also act as local sources of motion, behaving as self-propelled particles. In this article we present a detailed analytical and numerical study of the mechanics of topological defects in active nematic liquid crystals.

Luca Giomi; Mark J. Bowick; Prashant Mishra; Rastko Sknepnek; M. Cristina Marchetti

2014-03-26T23:59:59.000Z

150

Energy Dissipation and Defect Generation for Nanocrystalline...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Dissipation and Defect Generation for Nanocrystalline Silicon Carbide. Energy Dissipation and Defect Generation for Nanocrystalline Silicon Carbide. Abstract: Large-scale molecular...

151

Topological Defects from the Multiverse  

E-Print Network [OSTI]

Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

Jun Zhang; Jose J. Blanco-Pillado; Jaume Garriga; Alexander Vilenkin

2015-01-22T23:59:59.000Z

152

Proceedings of NAMRI/SME, Vol. 39, 2011 Additive Manufacturing based on Optimized Mask Video  

E-Print Network [OSTI]

Proceedings of NAMRI/SME, Vol. 39, 2011 Additive Manufacturing based on Optimized Mask Video of NAMRI/SME, Vol. 39, 2011 horizontal planes. Each slice is then converted into a two- dimensional (2D

Chen, Yong

153

Proceedings of NAMRI/SME, Vol. 40, 2012 Smooth Surface Fabrication in Mask Projection based  

E-Print Network [OSTI]

Proceedings of NAMRI/SME, Vol. 40, 2012 Smooth Surface Fabrication in Mask Projection based-stepping effect. #12;Proceedings of NAMRI/SME, Vol. 40, 2012 In this paper, we present an alternative approach

Chen, Yong

154

New MS-Windows-Based Educational Software for Teaching the Sunpath Diagram and Shading Mask Protractor  

E-Print Network [OSTI]

Mask 1 Degrees South Latitude. This combined le sunpath diagram and shading mask yrurr uuurjur u gertical surface facing 30 degrees east of south. FIGURE 7: Data Input Summaryfor the Partial Shading Device. The dimensions of the partial shading..., the shac similarly dimensioned device published in thc In Figure 7 and 8 the front shade is actually the has been rotated 90 degrees, re-sized and moved 1 directly below the horizontal shade. Architectural Graphics Standard is shown in Figure 9...

Oh, J. K. W.; Haberl, J. S.

1996-01-01T23:59:59.000Z

155

Diffraction spectral filter for use in extreme-UV lithography condenser  

SciTech Connect (OSTI)

A condenser system for generating a beam of radiation includes a source of radiation light that generates a continuous spectrum of radiation light; a condenser comprising one or more first optical elements for collecting radiation from the source of radiation light and for generating a beam of radiation; and a diffractive spectral filter for separating first radiation light having a particular wavelength from the continuous spectrum of radiation light. Cooling devices can be employed to remove heat generated. The condenser system can be used with a ringfield camera in projection lithography.

Sweatt, William C. (Albuquerque, NM); Tichenor, Daniel A. (Castro Valley, CA); Bernardez, Luis J. (Livermore, CA)

2002-01-01T23:59:59.000Z

156

Wafer chamber having a gas curtain for extreme-UV lithography  

DOE Patents [OSTI]

An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

Kanouff, Michael P. (Livermore, CA); Ray-Chaudhuri, Avijit K. (Livermore, CA)

2001-01-01T23:59:59.000Z

157

Photonic assisted light trapping integrated in ultrathin crystalline silicon solar cells by nanoimprint lithography  

E-Print Network [OSTI]

We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic nanopatterning, a better in-coupling and trapping of light is achieved, resulting in an absorption enhancement. The proposed light trapping mechanism can be explained as the superposition of a graded index effect and of the diffraction of light inside the photoactive layer. The absorption enhancement is translated into a 23% increase in short-circuit current, as compared to the benchmark cell, resulting in an increase in energy-conversion efficiency.

Trompoukis, Christos; Depauw, Valérie; Gordon, Ivan; Poortmans, Jef; 10.1063/1.4749810.

2012-01-01T23:59:59.000Z

158

Elevating optical activity: Efficient on-edge lithography of three-dimensional starfish metamaterial  

SciTech Connect (OSTI)

We present an approach for extremely fast, wafer-scale fabrication of chiral starfish metamaterials based on electron beam- and on-edge lithography. A millimeter sized array of both the planar chiral and the true 3D chiral starfish is realized, and their chiroptical performances are compared by circular dichroism measurements. We find optical activity in the visible and near-infrared spectral range, where the 3D starfish clearly outperforms the planar design by almost 2 orders of magnitude, though fabrication efforts are only moderately increased. The presented approach is capable of bridging the gap between high performance optical chiral metamaterials and industrial production by nanoimprint technology.

Dietrich, K., E-mail: dietrich.kay@uni-jena.de; Menzel, C.; Lehr, D.; Puffky, O.; Pertsch, T.; Tünnermann, A.; Kley, E.-B. [Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Hübner, U. [Leibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena (Germany)

2014-05-12T23:59:59.000Z

159

Soft holographic interference lithography microlens for enhanced organic light emitting diode light extraction  

SciTech Connect (OSTI)

Very uniform 2 {micro}m-pitch square microlens arrays ({micro}LAs), embossed on the blank glass side of an indium-tin-oxide (ITO)-coated 1.1 mm-thick glass, are used to enhance light extraction from organic light-emitting diodes (OLEDs) by {approx}100%, significantly higher than enhancements reported previously. The array design and size relative to the OLED pixel size appear to be responsible for this enhancement. The arrays are fabricated by very economical soft lithography imprinting of a polydimethylsiloxane (PDMS) mold (itself obtained from a Ni master stamp that is generated from holographic interference lithography of a photoresist) on a UV-curable polyurethane drop placed on the glass. Green and blue OLEDs are then fabricated on the ITO to complete the device. When the {mu}LA is {approx}15 x 15 mm{sup 2}, i.e., much larger than the {approx}3 x 3 mm{sup 2} OLED pixel, the electroluminescence (EL) in the forward direction is enhanced by {approx}100%. Similarly, a 19 x 25 mm{sup 2} {mu}LA enhances the EL extracted from a 3 x 3 array of 2 x 2 mm{sup 2} OLED pixels by 96%. Simulations that include the effects of absorption in the organic and ITO layers are in accordance with the experimental results and indicate that a thinner 0.7 mm thick glass would yield a {approx}140% enhancement.

Park, Joong-Mok; Gan, Zhengqing; Leung, Wai Y.; Liu, Rui; Ye, Zhuo; Constant, Kristen; Shinar, Joseph; Shinar, Ruth; Ho, Kai-Ming

2011-06-06T23:59:59.000Z

160

Fabrication of planar quantum magnetic disk structure using electron beam lithography, reactive ion etching, and chemical mechanical polishing  

E-Print Network [OSTI]

Fabrication of planar quantum magnetic disk structure using electron beam lithography, reactive ion, Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 Received 2 June's size and location, and reactive ion etching was used to form an SiO2 template. Nickel electroplating

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Ultra-lightweight nanorelief networks : photopatterned microframes  

E-Print Network [OSTI]

Lightweight nano-network structures in polymers have been fabricated and investigated for their mechanical properties. Fabrication techniques via holographic interference lithography and phase mask lithography were implemented ...

Choi, Taeyi

2007-01-01T23:59:59.000Z

162

Anticorrelation between Surface and Subsurface Point Defects...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

between Surface and Subsurface Point Defects and the Impact on the Redox Chemistry of TiO2(110). Anticorrelation between Surface and Subsurface Point Defects and the...

163

Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices  

DOE Patents [OSTI]

A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

2001-01-01T23:59:59.000Z

164

Gd plasma source modeling at 6.7 nm for future lithography  

SciTech Connect (OSTI)

Plasmas containing gadolinium have been proposed as sources for next generation lithography at 6.x nm. To determine the optimum plasma conditions, atomic structure calculations have been performed for Gd{sup 11+} to Gd{sup 27+} ions which showed that n = 4 - n = 4 resonance transitions overlap in the 6.5-7.0 nm region. Plasma modeling calculations, assuming collisional-radiative equilibrium, predict that the optimum temperature for an optically thin plasma is close to 110 eV and that maximum intensity occurs at 6.76 nm under these conditions. The close agreement between simulated and experimental spectra from laser and discharge produced plasmas indicates the validity of our approach.

Li Bowen; Dunne, Padraig; O'Sullivan, Gerry [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Higashiguchi, Takeshi; Yugami, Noboru [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), and Optical Technology Innovation Center (OpTIC), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Japan Science and Technology Agency, CREST, 4-1-8 Honcho, Kanagawa, Saitama 332-0012 (Japan); Otsuka, Takamitsu [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), and Optical Technology Innovation Center (OpTIC), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Jiang, Weihua [Department of Electrical Engineering, Nagaoka University of Technology, Kami-tomiokamachi 1603-1, Nagaoka, Niigata 940-2188 (Japan); Endo, Akira [Research Institute of Science and Engineering, Waseda University, 3-4-1, Okubo, Shinjuku-ku, Tokyo 169-0072 (Japan)

2011-12-05T23:59:59.000Z

165

Study of nano imprinting using soft lithography on Krafty glue and PVDF polymer thin films  

SciTech Connect (OSTI)

The present work reveals soft lithography strategy based on self assembly and replica molding for carrying out micro and nanofabrication. It provides a convenient, effective and very low cost method for the formation and manufacturing of micro and nano structures. Al-layer of compact disc (sony CD-R) used as a stamp with patterned relief structures to generate patterns and structures with pattern size of 100nm height, 1.7 ?m wide. In literature, PDMS (Polydimethylsiloxane) solution is widely used to get negative copy of the Al-layer. In this work, we have used inexpensive white glue (Polyvinylacetate + water), 15gm (?5) and PVDF (Polyvinylidene difluoride) spin coated films and successfully transferred the nano patterns of Al layer on to white glue and PVDF films.

Sankar, M. S. Ravi, E-mail: rameshg.phy@pondiuni.edu; Gangineni, Ramesh Babu, E-mail: rameshg.phy@pondiuni.edu [Department of Physics, Pondicherry University, R. V. Nagar, Kalapet, Puducherry - 605014 (India)

2014-04-24T23:59:59.000Z

166

Learning Defect Predictors:Lessons from the Trenches Learning Defect Predictors  

E-Print Network [OSTI]

Learning Defect Predictors:Lessons from the Trenches Learning Defect Predictors: Lessons from the Trenches Tim Menzies LCSEE, WVU tim@menzies.us October 28, 2008 1 / 40 #12;Learning Defect Predictors:Lessons change the rules of the game. 2 / 40 #12;Learning Defect Predictors:Lessons from the Trenches

Menzies, Tim

167

Effects of Stone-Wales and vacancy defects in atomic-scale friction on defective graphite  

SciTech Connect (OSTI)

Graphite is an excellent solid lubricant for surface coating, but its performance is significantly weakened by the vacancy or Stone-Wales (SW) defect. This study uses molecular dynamics simulations to explore the frictional behavior of a diamond tip sliding over a graphite which contains a single defect or stacked defects. Our results suggest that the friction on defective graphite shows a strong dependence on defect location and type. The 5-7-7-5 structure of SW defect results in an effectively negative slope of friction. For defective graphite containing a defect in the surface, adding a single vacancy in the interior layer will decrease the friction coefficients, while setting a SW defect in the interior layer may increase the friction coefficients. Our obtained results may provide useful information for understanding the atomic-scale friction properties of defective graphite.

Sun, Xiao-Yu [Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan 430072 (China); Key Laboratory of Hubei Province for Water Jet Theory and New Technology, Wuhan University, Wuhan 430072 (China); Wu, RunNi; Xia, Re [Key Laboratory of Hubei Province for Water Jet Theory and New Technology, Wuhan University, Wuhan 430072 (China); Chu, Xi-Hua; Xu, Yuan-Jie, E-mail: yj-xu@whu.edu.cn [Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan 430072 (China)

2014-05-05T23:59:59.000Z

168

A direct-write thick-film lithography process for multi-parameter control of tooling in continuous roll-to-roll microcontact printing  

E-Print Network [OSTI]

Roll-to-roll (R2R) microcontact printing ([mu]CP) aims to transform micron-precision soft lithography in a continuous, large-scale, high-throughput process for large-area surface patterning, flexible electronics and ...

Nietner, Larissa F

2014-01-01T23:59:59.000Z

169

A NOVEL APPROACH TO SOFT-MASK ESTIMATION AND LOG-SPECTRAL ENHANCEMENT FOR ROBUST SPEECH RECOGNITION  

E-Print Network [OSTI]

A NOVEL APPROACH TO SOFT-MASK ESTIMATION AND LOG-SPECTRAL ENHANCEMENT FOR ROBUST SPEECH RECOGNITION-- Speech Recognition, Feature Extraction, Speech Enhancement, Mask Estimation, Median Filtering. 1 enhancement. Reliable SPPs provide clues about the spectro-temporal location of speech and are thus a highly

Alwan, Abeer

170

Theory of masking with codewords in hardware: low-weight dth-order correlation-immune Boolean  

E-Print Network [OSTI]

, d = 4) and (n = 10, d {4, 5}). These results set new bounds for the minimal number of lines difficulty when design- ing a masking scheme is to pass through the substitution boxes (sboxes). Clas- sical with the entropy. In this article, we are interested in a masking solution with- out timing overhead and a limited

171

Conformal nets III: fusion of defects  

E-Print Network [OSTI]

Conformal nets provides a mathematical model for conformal field theory. We define a notion of defect between conformal nets, formalizing the idea of an interaction between two conformal field theories. We introduce an operation of fusion of defects, and prove that the fusion of two defects is again a defect, provided the fusion occurs over a conformal net of finite index. There is a notion of sector (or bimodule) between two defects, and operations of horizontal and vertical fusion of such sectors. Our most difficult technical result is that the horizontal fusion of the vacuum sectors of two defects is isomorphic to the vacuum sector of the fused defect. Equipped with this isomorphism, we construct the basic interchange isomorphism between the horizontal fusion of two vertical fusions and the vertical fusion of two horizontal fusions of sectors.

Arthur Bartels; Christopher L. Douglas; André Henriques

2015-02-21T23:59:59.000Z

172

Mask estimation for missing data speech recognition based on statistics of binaural interaction  

E-Print Network [OSTI]

1 Mask estimation for missing data speech recognition based on statistics of binaural interaction to a target sound source in the presence of other This work was funded by EPSRC grant GR/R47400 comparisons are used to cancel interfering sound sources [5] or actively group acoustic energy which

Barker, Jon

173

The application of nanosecond-pulsed laser welding technology in MEMS packaging with a shadow mask$  

E-Print Network [OSTI]

The application of nanosecond-pulsed laser welding technology in MEMS packaging with a shadow mask wiring is not pre- ferred. A comprehensive review on laser welding was given in [6]. The laser welding of laser welding is to create the liquid pool by absorption of incident radiation, allow it to grow

Lin, Liwei

174

Annual variation in primary moult parameters in Cape Weavers, Southern Masked Weavers and Southern Red  

E-Print Network [OSTI]

and Southern Red Bishops in the Western Cape, South Africa #12;160 #12;161 Annual variation in primary moult parameters in Cape Weavers, Southern Masked Weavers and Southern Red Bishops in the Western Cape, South Africa Abstract Duration of primary moult was similar in Cape Weavers and Southern Red Bishops (96 days

de Villiers, Marienne

175

Development of metal etch mask by single layer lift-off for silicon nitride photonic crystals  

E-Print Network [OSTI]

been great interest in extending these devices into the visible and ultraviolet (UV) wavelengths that spans the entire visible and part of the UV spec- trum. SiN has already been used to develop low loss dry etching, which results in significant degradation of the mask pattern. This degradation typically

Waks, Edo

176

Computer-aided engineering system for design of sequence arrays and lithographic masks  

DOE Patents [OSTI]

An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks.

Hubbell, Earl A. (Mt. View, CA); Lipshutz, Robert J. (Palo Alto, CA); Morris, Macdonald S. (San Jose, CA); Winkler, James L. (Palo Alto, CA)

1997-01-01T23:59:59.000Z

177

Multi-Color Coronagraph Experiment in a Vacuum Testbed with a Binary Shaped Pupil Mask  

E-Print Network [OSTI]

We conducted a number of multi-band coronagraph experiments using a vacuum chamber and a binary-shaped pupil mask which in principle should work at all wavelengths, in the context of the research and development on a coronagraph to observe extra-solar planets (exoplanets) directly. The aim of this work is to demonstrate that subtraction of Point Spread Function (PSF) and multi-band experiments using a binary-shaped pupil mask coronagraph would help improve the contrast in the observation of exoplanets. A checkerboard mask, a kind of binary-shaped pupil mask, was used. We improved the temperature stability by installing the coronagraph optics in a vacuum chamber, controlling the temperature of the optical bench, and covering the vacuum chamber with thermal insulation layers. We evaluated how much the PSF subtraction contributes to the high contrast observation by subtracting the images obtained through the coronagraph. We also carried out multi- band experiments in order to demonstrate a more realistic observa...

Haze, Kanae; Abe, Lyu; Kotani, Takayuki; Nakagawa, Takao; Sato, Toshimichi; Yamamuro, Tomoyasu

2011-01-01T23:59:59.000Z

178

Can we stop the spread of influenza in schools with face masks?  

SciTech Connect (OSTI)

In the absence of a strain-specific vaccine and the potential resistance to antiviral medication, nonpharmaceutical interventions can be used to reduce the spread of an infectious disease such as influenza. The most common non-pharmaceutical interventions include school closures, travel restrictions, social distancing, enforced or volunteer home isolation and quarantine, improved hand hygiene, and the appropriate wearing of face masks. However, for some of these interventions, there are some unavoidable economic costs to both employees and employers, as well as possible additional detriment to society as a whole. For example, it has been shown that school-age children are most likely to be infected and act as sources of infection for others, due to their greater societal interaction and increased susceptibility. Therefore, preventing or at least reducing infections in children is a logical first-line of defense. For this reason, school closures have been widely investigated and recommended as part of pandemic influenza preparedness, and some studies support this conclusion. Yet, school closures would result in lost work days if at least one parent must be absent from work to care for children who would otherwise be at school. In addition, the delay in-academic progress may be detrimental due to mass school absenteeism. In particular, the pandemic influenza guidance by the U.S. Department of Health and Human Services recommends school closures for less than four weeks for Category 2 and 3 pandemics (i.e., similar to the milder 1957 and 1968 pandemics) and one to three months for Category 4 and 5 pandemics (i .e., similar to the 1918 pandemic ). Yet, given the above, it is clear that closing schools for up to three months is unlikely to be a practical mitigation strategy for many families and society. Thus modelers and policy makers need to weigh all factors before recommending such drastic measures, particularly if the agent under consideration typically has low mortality and causes a mild disease. Therefore, we contend that face masks are an effective, practical, non-pharmaceutical intervention that would reduce the spread of disease among school-children, while keeping schools open. Influenza spreads through person-to-person contact, via transmission by large droplets or aerosols (droplet nuclei) produced by breathing, talking, coughing or sneezing, as well as by direct (though most people touch very few others in their daily lives) or indirect (i.e., via fomites) contact. Face masks act as a physical barrier to reduce the amount of potentially infectious inhaled and exhaled particles, although they would not reliably protect the wearer against aerosols; a recent study also demonstrated that they can redirect and decelerate exhaled airflows (when worn by an infected individual) to prevent them from entering the breathing zones of others. Thus, if a whole classroom were to don face masks, disease transmission would be expected to be greatly diminished. Another recent study on face masks and hand hygiene show a 10-50% transmission reduction for influenza-like illnesses. Furthermore, face masks can act as an effective physical reminder and barrier to transmission by preventing the wearer from touching any potentially infectious secretions from their mucous membranes (i.e., from the nose and mouth), which is another mechanism for direct and indirect contact transmission for influenza. A recent systematic review has suggested that wearing masks can be highly effective in limiting the transmission of respiratory infections, such as influenza. Yet, admittedly, the effectiveness of this intervention strategy is highly dependent on compliance (i.e., the willingness to wear the mask in all appropriate situations), which in tum depends on comfort, convenience, fitness, and hygiene. Importantly, masks themselves must not become a source of infection (or reinfection); as such they should be replaced or sanitized daily (where possible) to maximize effectiveness. One solution could be for masks to be touted as fashion accessories, whi

Del Valle, Sara Y [Los Alamos National Laboratory; Tellier, Raymond [UNIV OF CALGARY; Settles, Gary [UNIV PARK; Tang, Julian [NATIONAL UNIV OF SINGAPORE

2009-01-01T23:59:59.000Z

179

Evolution of Topological Defects During Inflation  

E-Print Network [OSTI]

Topological defects can be formed during inflation by phase transitions as well as by quantum nucleation. We study the effect of the expansion of the Universe on the internal structure of the defects. We look for stationary solutions to the field equations, i.e. solutions that depend only on the proper distance from the defect core. In the case of very thin defects, whose core dimensions are much smaller than the de Sitter horizon, we find that the solutions are well approximated by the flat space solutions. However, as the flat space thickness parameter $\\delta_0$ increases we notice a deviation from this, an effect that becomes dramatic as $\\delta_0$ approaches $(H)^{-1}/{\\sqrt 2}$. Beyond this critical value we find no stationary solutions to the field equations. We conclude that only defects that have flat space thicknesses less than the critical value survive, while thicker defects are smeared out by the expansion.

R. Basu; A. Vilenkin

1994-02-22T23:59:59.000Z

180

Threshold displacement energies and defect formation energies...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

energies and defect formation energies in Y2Ti2O7. Abstract: Ab initio molecular dynamics simulations have been carried out to determine both the threshold displacement...

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Arrays of nanoscale magnetic dots: Fabrication by x-ray interference lithography and characterization  

SciTech Connect (OSTI)

X-ray interference lithography (XIL) was employed in combination with electrodeposition to fabricate arrays of nanoscale nickel dots which are uniform over 40 {mu}m and have periods down to 71 nm. Using extreme-ultraviolet light, XIL has the potential to produce magnetic dot arrays over large areas with periods well below 50 nm, and down to a theoretical limit of 6.5 nm for a 13 nm x-ray wavelength. In the nickel dot arrays, we observed the effect of interdot magnetic stray field interactions. Measuring the hysteresis loops using the magneto-optical Kerr effect, a double switching via the vortex state was observed in the nickel dots with diameters down to 44 nm and large dot separations. As the dot separations are reduced to below around 50 nm a single switching, occurring by collective rotation of the magnetic spins, is favored due to interdot magnetic stray field interactions. This results in magnetic flux closure through several dots which could be visualized with micromagnetic simulations. Further evidence of the stray field interactions was seen in photoemission electron microscopy images, where bands of contrast corresponding to chains of coupled dots were observed.

Heyderman, L.J.; Solak, H.H.; David, C.; Atkinson, D.; Cowburn, R.P.; Nolting, F. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Nanomagnetism Group, Department of Physics, University of Durham, Rochester Building, Science Laboratories, South Road, Durham DH1 3LE (United Kingdom); Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

2004-11-22T23:59:59.000Z

182

ThreeDimensional Metallic Microstructures Fabricated by Soft Lithography and Microelectrodeposition  

E-Print Network [OSTI]

will require new approaches not drawn from existing tech­ nologies. Electroforming (electrodeposition structures by repairing any strain­induced defects with electrodeposition of ad­ ditional metal over bubblememorydevices, 11 thin­ film chip carriers, 2 and components for MEMS (nickel turbine rotor, 5 magnetic

Whitesides, Sue

183

Computer-aided engineering system for design of sequence arrays and lithographic masks  

DOE Patents [OSTI]

An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system (100) is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files (104) to design and/or generate lithographic masks (110).

Hubbell, Earl A. (Mt. View, CA); Morris, MacDonald S. (San Jose, CA); Winkler, James L. (Palo Alto, CA)

1999-01-05T23:59:59.000Z

184

Computer-aided engineering system for design of sequence arrays and lithographic masks  

DOE Patents [OSTI]

An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system (100) is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files (104) to design and/or generate lithographic masks (110).

Hubbell, Earl A. (Mt. View, CA); Morris, MacDonald S. (San Jose, CA); Winkler, James L. (Palo Alto, CA)

1996-01-01T23:59:59.000Z

185

Computer-aided engineering system for design of sequence arrays and lithographic masks  

DOE Patents [OSTI]

An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

Hubbell, E.A.; Morris, M.S.; Winkler, J.L.

1999-01-05T23:59:59.000Z

186

Computer-aided engineering system for design of sequence arrays and lithographic masks  

DOE Patents [OSTI]

An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

Hubbell, E.A.; Morris, M.S.; Winkler, J.L.

1996-11-05T23:59:59.000Z

187

Computer-aided engineering system for design of sequence arrays and lithographic masks  

DOE Patents [OSTI]

An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

Hubbell, E.A.; Lipshutz, R.J.; Morris, M.S.; Winkler, J.L.

1997-01-14T23:59:59.000Z

188

Defect Analysis of Vehicle Compressed Natural Gas  

E-Print Network [OSTI]

Defect Analysis of Vehicle Compressed Natural Gas Composite Cylinder A China Paper on Type 4;Industrial Computed Tomography (CT) Examination of Composite Gas Cylinder #12;CT of 01-01 Layer at 4.8MPa during the gas compressing and releasing processes are the direct causes for liner defect - Since

189

DefectDomain Wall Interactions in Trigonal  

E-Print Network [OSTI]

Defect­Domain Wall Interactions in Trigonal Ferroelectrics Venkatraman Gopalan,1 Volkmar Dierolf,2 walls in the trigonal ferroelectrics lithium niobate and lithium tantalate. It is shown that extrinsic questions re- garding intrinsic widths, defect­domain wall interactions, and static versus dynamic wall

Gopalan, Venkatraman

190

Native point defects in GaSb  

SciTech Connect (OSTI)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

2014-10-14T23:59:59.000Z

191

Coulomb screening in graphene with topological defects  

E-Print Network [OSTI]

We analyze the screening of an external Coulomb charge in gapless graphene cone, which is taken as a prototype of a topological defect. In the subcritical regime, the induced charge is calculated using both the Green's function and the Friedel sum rule. The dependence of the polarization charge on the Coulomb strength obtained from the Green's function clearly shows the effect of the conical defect and indicates that the critical charge itself depends on the sample topology. Similar analysis using the Friedel sum rule indicates that the two results agree for low values of the Coulomb charge but differ for the higher strengths, especially in the presence of the conical defect. For a given subcritical charge, the transport cross-section has a higher value in the presence of the conical defect. In the supercritical regime we show that the coefficient of the power law tail of polarization charge density can be expressed as a summation of functions which vary log periodically with the distance from the Coulomb impurity. The period of variation depends on the conical defect. In the presence of the conical defect, the Fano resonances begin to appear in the transport cross-section for a lower value of the Coulomb charge. For both sub and supercritical regime we derive the dependence of LDOS on the conical defect. The effects of generalized boundary condition on the physical observables are also discussed.

Baishali Chakraborty; Kumar S. Gupta; Siddhartha Sen

2015-02-16T23:59:59.000Z

192

Coulomb screening in graphene with topological defects  

E-Print Network [OSTI]

We analyze the screening of an external Coulomb charge in gapless graphene cone, which is taken as a prototype of a topological defect. In the subcritical regime, the induced charge is calculated using both the Green's function and the Friedel sum rule. The dependence of the polarization charge on the Coulomb strength obtained from the Green's function clearly shows the effect of the conical defect and indicates that the critical charge itself depends on the sample topology. Similar analysis using the Friedel sum rule indicates that the two results agree for low values of the Coulomb charge but differ for the higher strengths, especially in the presence of the conical defect. For a given subcritical charge, the transport cross-section has a higher value in the presence of the conical defect. In the supercritical regime we show that the coefficient of the power law tail of polarization charge density can be expressed as a summation of functions which vary log periodically with the distance from the Coulomb impurity. The period of variation depends on the conical defect. In the presence of the conical defect, the Fano resonances begin to appear in the transport cross-section for a lower value of the Coulomb charge. For both sub and supercritical regime we derive the dependence of LDOS on the conical defect. The effects of generalized boundary condition on the physical observables are also discussed.

Baishali Chakraborty; Kumar S. Gupta; Siddhartha Sen

2015-02-20T23:59:59.000Z

193

Irradiation-induced defect clustering and amorphization in silicon...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Irradiation-induced defect clustering and amorphization in silicon carbide. Irradiation-induced defect clustering and amorphization in silicon carbide. Abstract: Previous computer...

194

Magnesium behavior and structural defects in Mg+ ion implanted...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide. Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide. Abstract: As a...

195

Defect classes - an overdue paradigm for CMOS IC testing  

SciTech Connect (OSTI)

The IC test industry has struggled for more than 30 years to establish a test approach that would guarantee a low defect level to the customer. We propose a comprehensive strategy for testing CMOS ICs that uses defect classes based on measured defect electrical properties. Defect classes differ from traditional fault models. Our defect class approach requires that the test strategy match the defect electrical properties, while fault models require that IC defects match the fault definition. We use data from Sandia Labs failure analysis and test facilities and from public literature. We describe test pattern requirements for each defect class and propose a test paradigm.

Hawkins, C.F. [Univ. of New Mexico, Albuquerque, NM (United States); Soden, J.M.; Righter, A.W. [Sandia National Labs., Albuquerque, NM (United States); Ferguson, F.J. [Univ. of California, Santa Cruz, CA (United States)

1994-09-01T23:59:59.000Z

196

Modification of Defect Structures in Graphene by Electron Irradiation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Modification of Defect Structures in Graphene by Electron Irradiation: Ab Initio Molecular Dynamics Simulations. Modification of Defect Structures in Graphene by Electron...

197

Exploring the interaction between lithium ion and defective graphene...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Exploring the interaction between lithium ion and defective graphene surface using dispersion corrected DFT studies. Exploring the interaction between lithium ion and defective...

198

Brake Defect Causation and Abatement Study (BDCAS)  

E-Print Network [OSTI]

Brake Defect Causation and Abatement Study (BDCAS) Oak Ridge National Laboratory managed by UT corrective actions and validate true abatement of initial out-of- service causation the FMCSA began the BDCAS

199

Generalized quantum defect methods in quantum chemistry  

E-Print Network [OSTI]

The reaction matrix of multichannel quantum defect theory, K, gives a complete picture of the electronic structure and the electron - nuclear dynamics for a molecule. The reaction matrix can be used to examine both bound ...

Altunata, Serhan

2006-01-01T23:59:59.000Z

200

Di-interstitial defect in silicon revisited  

SciTech Connect (OSTI)

Infrared spectroscopy was used to study the defect spectrum of Cz-Si samples following fast neutron irradiation. We mainly focus on the band at 533 cm{sup ?1}, which disappears from the spectra at ?170 °C, exhibiting similar thermal stability with the Si-P6 electron paramagnetic resonance (EPR) spectrum previously correlated with the di-interstitial defect. The suggested structural model of this defect comprises of two self-interstitial atoms located symmetrically around a lattice site Si atom. The band anneals out following a first-order kinetics with an activation energy of 0.88 ± 0.3 eV. This value does not deviate considerably from previously quoted experimental and theoretical values for the di-interstitial defect. The present results indicate that the 533 cm{sup ?1} IR band originates from the same structure as that of the Si-P6 EPR spectrum.

Londos, C. A.; Antonaras, G. [Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens (Greece)] [Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens (Greece); Chroneos, A. [Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom) [Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom); Department of Materials, Imperial College London, London SW7 2BP (United Kingdom)

2013-11-21T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Wavelet-Smoothed Interpolation of Masked Scientific Data for JPEG 2000 Compression  

SciTech Connect (OSTI)

How should we manage scientific data with 'holes'? Some applications, like JPEG 2000, expect logically rectangular data, but some sources, like the Parallel Ocean Program (POP), generate data that isn't defined on certain subsets. We refer to grid points that lack well-defined, scientifically meaningful sample values as 'masked' samples. Wavelet-smoothing is a highly scalable interpolation scheme for regions with complex boundaries on logically rectangular grids. Computation is based on forward/inverse discrete wavelet transforms, so runtime complexity and memory scale linearly with respect to sample count. Efficient state-of-the-art minimal realizations yield small constants (O(10)) for arithmetic complexity scaling, and in-situ implementation techniques make optimal use of memory. Implementation in two dimensions using tensor product filter banks is straighsorward and should generalize routinely to higher dimensions. No hand-tuning required when the interpolation mask changes, making the method aeractive for problems with time-varying masks. Well-suited for interpolating undefined samples prior to JPEG 2000 encoding. The method outperforms global mean interpolation, as judged by both SNR rate-distortion performance and low-rate artifact mitigation, for data distributions whose histograms do not take the form of sharply peaked, symmetric, unimodal probability density functions. These performance advantages can hold even for data whose distribution differs only moderately from the peaked unimodal case, as demonstrated by POP salinity data. The interpolation method is very general and is not tied to any particular class of applications, could be used for more generic smooth interpolation.

Brislawn, Christopher M. [Los Alamos National Laboratory

2012-08-13T23:59:59.000Z

202

Line detection -The masks shown below can be used to detect lines at various orientations  

E-Print Network [OSTI]

every mask over the image and we combine the responses: R(x, y) = max(|R1(x, y)|, |R2(x, y)|, |R3(x, y)|, |R4(x, y)|) If R(x, y) > T, then discontinuity -1 -1 -1 -1 -1 -1 -1-1 -1 -1 -1 -1 2 -1 -1 -1 -1 2 -1 -1 -1222 2 -1 -1-12 2 -1 2 2 2 2 -1 Original Image R1 R2 R3 R4 Convolved Image with R1 Convolved

Masci, Frank

203

Patterned graphene functionalization via mask-free scanning of micro-plasma jet under ambient condition  

SciTech Connect (OSTI)

In this work, a mask-free method is introduced for patterned nitrogen doping of graphene using a micro-plasma jet under ambient condition. Raman and X-ray photoelectron spectroscopy spectra indicate that nitrogen atoms are incorporated into the graphene lattice with the two-dimensional spatial distribution precisely controlled in the range of mm down to 10??m. Since the chemistry of the micro-plasma jet can be controlled by the choice of the gas mixture, this direct writing process with micro-plasma jet can be a versatile approach for patterned functionalization of graphene with high spatial resolution. This could have promising applications in graphene-based electronics.

Ye, Dong; Yu, Yao, E-mail: ensiyu@mail.hust.edu.cn; Liu, Lin [School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074 Wuhan (China)] [School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074 Wuhan (China); Wu, Shu-Qun; Lu, Xin-Pei [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, 430074 Wuhan (China)] [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, 430074 Wuhan (China); Wu, Yue [Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3255 (United States)] [Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3255 (United States)

2014-03-10T23:59:59.000Z

204

Integrated circuit mask generation using a raster scanned laser trimming system  

E-Print Network [OSTI]

7. Desir ed geometry deflation 8. Geometry deflation error 9. Windowing a mask layout 10. SLIMM system diagram 11. MGF file structure 47 48 49 49 50 52 53 53 54 61 64 12. Macro definition example 13. PFP to MGF conversion 14. PTR... completing each shape, the electron beam is "vector ed" directly to the star ting point of the next shape. Consider able time savings are possible since the beam doesn't have to scan over areas not requiring geometries to be produced. Raster scanning...

Gourley, Kevin Dwayne

1982-01-01T23:59:59.000Z

205

A CLOSE COMPANION SEARCH AROUND L DWARFS USING APERTURE MASKING INTERFEROMETRY AND PALOMAR LASER GUIDE STAR ADAPTIVE OPTICS  

SciTech Connect (OSTI)

We present a close companion search around 16 known early L dwarfs using aperture masking interferometry with Palomar laser guide star adaptive optics (LGS AO). The use of aperture masking allows the detection of close binaries, corresponding to projected physical separations of 0.6-10.0 AU for the targets of our survey. This survey achieved median contrast limits of {Delta}K {approx} 2.3 for separations between 1.2 {lambda}/D-4{lambda}/D and {Delta}K {approx} 1.4 at 2/3 {lambda}/D. We present four candidate binaries detected with moderate-to-high confidence (90%-98%). Two have projected physical separations less than 1.5 AU. This may indicate that tight-separation binaries contribute more significantly to the binary fraction than currently assumed, consistent with spectroscopic and photometric overluminosity studies. Ten targets of this survey have previously been observed with the Hubble Space Telescope as part of companion searches. We use the increased resolution of aperture masking to search for close or dim companions that would be obscured by full aperture imaging, finding two candidate binaries. This survey is the first application of aperture masking with LGS AO at Palomar. Several new techniques for the analysis of aperture masking data in the low signal-to-noise regime are explored.

Bernat, David [Department of Astronomy, Cornell University, Ithaca, NY 14853 (United States); Bouchez, Antonin H.; Cromer, John L.; Dekany, Richard G.; Moore, Anna M. [California Institute of Technology, Pasadena, CA 91125 (United States); Ireland, Michael; Tuthill, Peter [Sydney Institute for Astrophysics, School of Physics, University of Sydney (Australia); Martinache, Frantz [National Astronomical Observatory of Japan, Subaru Telescope, Hilo, HI 96720 (United States); Angione, John; Burruss, Rick S.; Guiwits, Stephen R.; Henning, John R.; Hickey, Jeff; Kibblewhite, Edward; McKenna, Daniel L.; Petrie, Harold L.; Roberts, Jennifer; Shelton, J. Chris; Thicksten, Robert P.; Trinh, Thang [Palomar Laser Guide Star Adaptive Optics Team, Palomar Observatory, California Institute of Technology, Palomar Mountain, CA 92060 (United States)

2010-06-01T23:59:59.000Z

206

Sub-50 nm high aspect-ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion  

E-Print Network [OSTI]

resolution electron beam lithography and reactive ion etching P. B. Fischer and S. Y. Chou University of Minnesota Department of Electrical Engineering, Minneapolis, Minnesota 554~3 (Received 29 July 1992 and chlorine based reactive ion etching. These nanoscale Si features can be further reduced to 10 nm using

207

Ice-assisted electron beam lithography of graphene This article has been downloaded from IOPscience. Please scroll down to see the full text article.  

E-Print Network [OSTI]

Ice-assisted electron beam lithography of graphene This article has been downloaded from IOPscience PUBLISHING NANOTECHNOLOGY Nanotechnology 23 (2012) 185302 (6pp) doi:10.1088/0957-4484/23/18/185302 Ice demonstrate that a low energy focused electron beam can locally pattern graphene coated with a thin ice layer

208

1 2014 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim wileyonlinelibrary.com Interfacial Nanosphere Lithography toward Ag2SAg  

E-Print Network [OSTI]

-shell Au@Ag2S nanoparticles,[6] hollow-solid Ag2S­Ag nanocomposites,[2,7] porous Ag2S­Ag hybrid nano- tubes. While a variety of physical processes-aided nano- sphere lithography methods have been developed above the tangent-point plane and Ag nano- bowl arrays enclosing the lower part of the MCC template were

Qi, Limin

209

Fabrication of Sub-10-nm Silicon Nanowire Arrays by Size Reduction Lithography Yang-Kyu Choi, Ji Zhu,, Jeff Grunes,, Jeffrey Bokor, and Gabor. A. Somorjai*,,  

E-Print Network [OSTI]

systems. Introduction The fabrication of nanoscale patterns with dimensions of 10 nm or less has been and space dimensions" from polysilicon (polycrystalline silicon) and a metal oxide by etching one et al. carried out what they called "spacer lithography" to produce electronic devices in silicon

Bokor, Jeffrey

210

Simulation of localized barrier defects in resonant tunneling diodes  

E-Print Network [OSTI]

. . . . 30 14 PVCR versus left energy and position for right defect atxt = 2152 A and Et =-0. 1 eV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 15 16 17 PVCR versus left defect position and energy for the right defect at xt... = 2152 A and Et = 0. 15 eV. . . . . . . . PVCR versus left defect position and energy for the right defect at xt = 2142 A and Et = 0. 15 eV. . . . . . . PVCR versus left defect position and energy for the right defect at x I = 2122 A and Et = 0 e...

Stoneberg, Jason Neal

1995-01-01T23:59:59.000Z

211

Beam Halo Measurements at UMER and the JLAB FEL Using an Adaptive Masking Method  

SciTech Connect (OSTI)

Beam halo is a chal­leng­ing issue for in­tense beams since it can cause beam loss, emit­tance growth, nu­cle­ar ac­ti­va­tion and sec­ondary elec­tron emis­sion. Be­cause of the po­ten­tial­ly low num­ber of par­ti­cles in the halo com­pared with beam core, tra­di­tion­al imag­ing meth­ods may not have suf­fi­cient con­trast to de­tect faint halos. We have de­vel­oped a high dy­nam­ic range, adap­tive mask­ing method to mea­sure halo using a dig­i­tal mi­cro-mir­ror array de­vice and demon­strat­ed its ef­fec­tive­ness ex­per­i­men­tal­ly on the Uni­ver­si­ty of Mary­land Elec­tron Ring (UMER). We also re­port on sim­i­lar ex­per­i­ments cur­rent­ly in progress at the Jef­fer­son Lab Free Elec­tron Laser (FEL) using this method.

Zhang, H D; Fiorito, R B; Kishek, R A; O& #x27; Shea, P G; Shkvarunets, A G; Benson, S V; Douglas, D; Wilson, F G

2011-03-01T23:59:59.000Z

212

Role of point defects/defect complexes in silicon device processing. Book of abstracts, fourth workshop  

SciTech Connect (OSTI)

The 41 abstracts are arranged into 6 sessions: impurities and defects in commercial substrates: their sources, effects on material yield, and material quality; impurity gettering in silicon: limits and manufacturability of impurity gettering and in silicon solar cells; impurity/defect passivation; new concepts in silicon growth: improved initial quality and thin films; and silicon solar cell design opportunities.

Not Available

1994-06-01T23:59:59.000Z

213

Manufacturing Defects Common to Composite Wind Turbine Blades: Effects of Defects  

E-Print Network [OSTI]

uni-directional wind turbine fiber-reinforced composite material with an epoxy resin were utilized of wind turbine blades have essentially dictated the use of low cost fiberglass composite materials. Even1 Manufacturing Defects Common to Composite Wind Turbine Blades: Effects of Defects Jared W. Nelson

214

Influence of defects on thermal and mechanical properties of metals  

E-Print Network [OSTI]

SDen ..................................... 33 13 Copper with 8 interstitials at 1600K ....................................................... 34 14 Temperature Vs time for copper without defects at 1360K .................... 39 15 Potential energy Vs time for copper without defects... at 1360K .............. 40 16 Total energy Vs time for copper without defects at 1360K .................... 40 17 Average volume Vs temperature for pure copper without defects .......... 41 18 Total energy Vs temperature for copper without defects...

Kamani, Sandeep Kumar

2009-05-15T23:59:59.000Z

215

High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding  

SciTech Connect (OSTI)

We report on the fabrication and characterization of hard x-ray waveguide channels manufactured by e-beam lithography, reactive ion etching and wafer bonding. The guiding layer consists of air or vacuum and the cladding material of silicon, which is favorable in view of minimizing absorption losses. The specifications for waveguide channels which have to be met in the hard x-ray range to achieve a suitable beam confinement in two orthogonal directions are extremely demanding. First, high aspect ratios up to 10{sup 6} have to be achieved between lateral structure size and length of the guides. Second, the channels have to be deeply embedded in material to warrant the guiding of the desired modes while absorbing all other (radiative) modes in the cladding material. We give a detailed report on device fabrication with the respective protocols and parameter optimization, the inspection and the optical characterization.

Neubauer, H.; Hoffmann, S.; Kanbach, M.; Haber, J.; Kalbfleisch, S.; Krüger, S. P.; Salditt, T., E-mail: tsaldit@gwdg.de [Institut für Röntgenphysik, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)

2014-06-07T23:59:59.000Z

216

The effects of fastener hole defects  

E-Print Network [OSTI]

) August 1991 ABSTRACT The Effects of Fastener Hole Defects. (August 1991) Scot D. Andrews, B. S. , Texas A8rM University Chair of Advisory Committee: Dr. Orden O. Ochoa The influence of drilling-induced defects, such as delamination, on the fatigue... ambient and elevated temperature wet conditions. Specimens were tested in a bearing tension frame to static failure in order to measure the failure load and to calculate pin bearing stress. From static test results, a fatigue load was selected as 66...

Andrews, Scot D.

1991-01-01T23:59:59.000Z

217

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier  

E-Print Network [OSTI]

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten properties of two epitaxial-laterally overgrown GaN structures with tungsten masks in 1100 and 1120 direction by tungsten masks3 to prevent the in-diffusion of silicon and oxygen atoms in the overgrown GaN, which

Nabben, Reinhard

218

A NEW ALGORITHM FOR RADIOISOTOPE IDENTIFICATION OF SHIELDED AND MASKED SNM/RDD MATERIALS  

SciTech Connect (OSTI)

Detection and identification of shielded and masked nuclear materials is crucial to national security, but vast borders and high volumes of traffic impose stringent requirements for practical detection systems. Such tools must be be mobile, and hence low power, provide a low false alarm rate, and be sufficiently robust to be operable by non-technical personnel. Currently fielded systems have not achieved all of these requirements simultaneously. Transport modeling such as that done in GADRAS is able to predict observed spectra to a high degree of fidelity; our research is focusing on a radionuclide identification algorithm that inverts this modeling within the constraints imposed by a handheld device. Key components of this work include incorporation of uncertainty as a function of both the background radiation estimate and the hypothesized sources, dimensionality reduction, and nonnegative matrix factorization. We have partially evaluated performance of our algorithm on a third-party data collection made with two different sodium iodide detection devices. Initial results indicate, with caveats, that our algorithm performs as good as or better than the on-board identification algorithms. The system developed was based on a probabilistic approach with an improved approach to variance modeling relative to past work. This system was chosen based on technical innovation and system performance over algorithms developed at two competing research institutions. One key outcome of this probabilistic approach was the development of an intuitive measure of confidence which was indeed useful enough that a classification algorithm was developed based around alarming on high confidence targets. This paper will present and discuss results of this novel approach to accurately identifying shielded or masked radioisotopes with radiation detection systems.

Jeffcoat, R.

2012-06-05T23:59:59.000Z

219

FEATURE ENHANCEMENT USING SPARSE REFERENCE AND ESTIMATED SOFT-MASK EXEMPLAR-PAIRS FOR NOISY SPEECH RECOGNITION  

E-Print Network [OSTI]

FEATURE ENHANCEMENT USING SPARSE REFERENCE AND ESTIMATED SOFT-MASK EXEMPLAR-PAIRS FOR NOISY SPEECH-robust speech recogni- tion is proposed. Existing sparse exemplar-based feature enhance- ment methods use clean speech recognition [14]. More recently in [13], another feature enhancement scheme is pro

Alwan, Abeer

220

Fast Yield-Driven Fracture for Variable Shaped-Beam Mask Andrew B. Kahng, Xu Xu and Alex Zelikovsky  

E-Print Network [OSTI]

Fast Yield-Driven Fracture for Variable Shaped-Beam Mask Writing Andrew B. Kahng, Xu Xu and Alex process generation have collectively presented new challenges for current fracture tools, which-dimension errors. Some commercial tools are available for handling the sliver minimization problem in fracture

Zelikovsky, Alexander

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Wavelength Invariant Bi/In Thermal Resist As A Si Anisotropic Etch Masking Layer And Direct Write Photomask Material  

E-Print Network [OSTI]

Wavelength Invariant Bi/In Thermal Resist As A Si Anisotropic Etch Masking Layer And Direct Write University, Burnaby, BC V5A 1S6, Canada ABSTRACT Bilayer Bi/In thin film thermal resists are Bi and In films which form an etch resistant material at ~7 mJ/cm2 laser exposures with near wavelength invariance from

Chapman, Glenn H.

222

Versatile, fuel-powered active gas mask or room air purifier Paul D. Ronney, Department of Aerospace and Mechanical Engineering  

E-Print Network [OSTI]

temperature (250°C ­ 400°C), a catalyst is required. Breakdown products of chemical-agent molecules eitherVersatile, fuel-powered active gas mask or room air purifier Paul D. Ronney, Department Number: CBDIF-2006-PRO01 (Individual Protection) Motivation and approach Practically all chemical

223

Defect analysis using resonant ultrasound spectroscopy  

E-Print Network [OSTI]

) ......................................................................... 62 Figure 4.5 FEA models of (a) Y Bend 1, (b) X Torsion 1, and (c) Z Bend 1 ......................................................................................... 64 Figure 4.6 Change in frequency vs. defect depth for mode Y Bend 1...................................................................................................... ix LIST OF TABLES .................................................................................................... xiii 1. INTRODUCTION............................................................................................... 1 1.1...

Flynn, Kevin Joseph

2009-05-15T23:59:59.000Z

224

Defect Characterization for Scaling of QCA Devices  

E-Print Network [OSTI]

operation and ultra low power dissipation [8]. Among these new devices, quantum dot cellular automata (QCA promising new computing scheme in the nano-scale regimes. As an emerging technology, QCA relies on radically voter, the inverter and the binary wire, are provided to show that defects have definitive trends

225

Coulomb screening in graphene with topological defects  

E-Print Network [OSTI]

We analyze the screening of an external Coulomb charge in gapless graphene cone, which is taken as a prototype of a topological defect. In the subcritical regime, the induced charge is calculated using both the Green's function and the Friedel sum rule. The dependence of the polarization charge on the Coulomb strength obtained from the Green's function clearly shows the effect of the conical defect and indicates that the critical charge itself depends on the sample topology. Similar analysis using the Friedel sum rule indicates that the two results agree for low values of the Coulomb charge but differ for the higher strengths, especially in the presence of the conical defect. For a given subcritical charge, the transport cross-section has a higher value in the presence of the conical defect. In the supercritical regime we show that the coefficient of the power law tail of polarization charge density can be expressed as a summation of functions which vary log periodically with the distance from the Coulomb imp...

Chakraborty, Baishali; Sen, Siddhartha

2015-01-01T23:59:59.000Z

226

Atomic-Level Computer Simulation of SiC: Defect Accumulation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Atomic-Level Computer Simulation of SiC: Defect Accumulation, Mechanical Properties and Defect Recovery. Atomic-Level Computer Simulation of SiC: Defect Accumulation, Mechanical...

227

Estimating the expected latency to failure due to manufacturing defects  

E-Print Network [OSTI]

Manufacturers of digital circuits test their products to find defective parts so they are not sold to customers. Despite extensive testing, some of their products that are defective pass the testing process. To combat this problem, manufacturers...

Dorsey, David Michael

2004-09-30T23:59:59.000Z

228

Defect site prediction based upon statistical analysis of fault signatures  

E-Print Network [OSTI]

Good failure analysis is the ability to determine the site of a circuit defect quickly and accurately. We propose a method for defect site prediction that is based on a site's probability of excitation, making no assumptions about the type...

Trinka, Michael Robert

2004-09-30T23:59:59.000Z

229

THE DEFECT STRUCTURE OF CdTe (*) F. A. KRGER  

E-Print Network [OSTI]

THE DEFECT STRUCTURE OF CdTe (*) F. A. KR�GER David Packard Professor of Electrical Engineering haute résistivité. Abstract. 2014 Evidence concerning the defect structure of CdTe is reviewed

Paris-Sud XI, Université de

230

Buckling and Topological Defects in Graphene and Carbon Nanotubes  

E-Print Network [OSTI]

defect formation energy in carbon nanotubes and graphene”.Carbon Nanotubes strain e zz Defect Formation Energies fromCARBON NANOTUBES Figure 4.3: Contour plots of strain energy

Chen, Shuo

2012-01-01T23:59:59.000Z

231

Defect- and Strain-enhanced Cavity Formation and Au Precipitation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Defect- and Strain-enhanced Cavity Formation and Au Precipitation at nano-crystalline ZrO2SiO2Si Interfaces . Defect- and Strain-enhanced Cavity Formation and Au Precipitation at...

232

Healing of defects in a two-dimensional granular crystal  

E-Print Network [OSTI]

Using a macroscopic analog for a two dimensional hexagonal crystal, we perform an experimental investigation of the self-healing properties of circular grain defects with an emphasis on defect orientation. A circular grain ...

Rice, Marie C

2014-01-01T23:59:59.000Z

233

Collective phenomena in defect crystals Reimer Kuhn1,  

E-Print Network [OSTI]

by quantum effects. Both thermal and dynamical properties are considered. The influence of interactions Talence cedex, France Received 25 April 2000 We investigate the effects of interactions between substitutional defects on the properties of defect crystals at low temperatures, where defect motion is governed

Kühn, Reimer

234

Metastable light induced defects in pentacene  

SciTech Connect (OSTI)

In this study we analyzed one of the environmental factors that could affect organic materials. Pentacene thin film samples were fabricated and the degradation of their electrical characteristics was measured when the devices were exposed to ultraviolet light irradiation. The results have been reported in terms of a trap density model, which provides a description of the dynamics of light induced electrically active defects in an organic semiconductor.

Liguori, R.; Aprano, S.; Rubino, A. [Department of Industrial Engineering (DIIn), University of Salerno, via Giovanni Paolo II, 132, 84084 Fisciano (Italy)

2014-02-21T23:59:59.000Z

235

Further investigation of the characteristics of nodular defects  

SciTech Connect (OSTI)

To increase the understanding of the damage sensitivity of nodular defects and provide exact evidence for theoretical study, the structures and the damage behavior of nodular defects in electron-beam deposited mirrors of HfO2/SiO2 are systemically investigated with a double-beam microscope (focused ion beam, scanning electron microscope). Nodular defects are classified into two kinds. In one kind the boundaries between nodules and the surrounding layers have become continuous for the last deposited materials, and in the other there are discontinuous boundaries between nodules and the surrounding layers. Nodular defects of the first kind typically have low domes, and the second have high domes. Laser damage experiments show that nodular defects of the first kind usually have a high laser resistance, and the laser-induced damage thresholds are limited in the second class of nodules. The dominant parameter of nodular defects related to damage is the height of the nodular defect.

Liu Xiaofeng; Li Dawei; Zhao Yuan'an; Li Xiao

2010-04-01T23:59:59.000Z

236

Tuning extreme ultraviolet emission for optimum coupling with multilayer mirrors for future lithography through control of ionic charge states  

SciTech Connect (OSTI)

We report on the identification of the optimum plasma conditions for a laser-produced plasma source for efficient coupling with multilayer mirrors at 6.x nm for beyond extreme ultraviolet lithography. A small shift to lower energies of the peak emission for Nd:YAG laser-produced gadolinium plasmas was observed with increasing laser power density. Charge-defined emission spectra were observed in electron beam ion trap (EBIT) studies and the charge states responsible identified by use of the flexible atomic code (FAC). The EBIT spectra displayed a larger systematic shift of the peak wavelength of intense emission at 6.x nm to longer wavelengths with increasing ionic charge. This combination of spectra enabled the key ion stage to be confirmed as Gd{sup 18+}, over a range of laser power densities, with contributions from Gd{sup 17+} and Gd{sup 19+} responsible for the slight shift to longer wavelengths in the laser-plasma spectra. The FAC calculation also identified the origin of observed out-of-band emission and the charge states responsible.

Ohashi, Hayato, E-mail: ohashi@cc.utsunomiya-u.ac.jp; Higashiguchi, Takeshi, E-mail: higashi@cc.utsunomiya-u.ac.jp; Suzuki, Yuhei; Kawasaki, Masato [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Li, Bowen; Dunne, Padraig; O'Sullivan, Gerry [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Kanehara, Tatsuhiko; Aida, Yuya; Nakamura, Nobuyuki [Institute for Laser Science, The University of Electro-Communications, Chofu, Tokyo 182-8585 (Japan); Torii, Shuichi; Makimura, Tetsuya [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Jiang, Weihua [Department of Electrical Engineering, Nagaoka University of Technology, Kami-tomiokamachi 1603-1, Nagaoka, Niigata 940-2188 (Japan)

2014-01-21T23:59:59.000Z

237

Optimization of extreme ultraviolet photons emission and collection in mass-limited laser produced plasmas for lithography application  

SciTech Connect (OSTI)

The progress in development of commercial system for next generation EUV lithography requires, among other factors, significant improvement in EUV photon sources such as discharge produced plasma (DPP) and laser produced plasma (LPP) devices. There are still many uncertainties in determining the optimum device since there are many parameters for the suitable and efficient energy source and target configuration and size. Complex devices with trigger lasers in DPP or with pre-pulsing in LPP provide wide area for optimization in regards to conversion efficiency (CE) and components lifetime. We considered in our analysis a promising LPP source configuration using 10-30 {mu}m tin droplet targets, and predicted conditions for the most efficient EUV radiation output and collection as well as calculating photons source location and size. We optimized several parameters of dual-beam lasers and their relationship to target size. We used our HEIGHTS comprehensive and integrated full 3D simulation package to study and optimize LPP processes with various target sizes to maximize the CE of the system.

Sizyuk, T.; Hassanein, A. [Center for Materials under Extreme Environment, School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2012-08-01T23:59:59.000Z

238

Enhanced Software for Displaying Orthographic, Stereographic, Gnomic and Cylindrical Projections of the Sunpath Diagram and Shading Mask Protractor  

E-Print Network [OSTI]

. INTRODUCTION The sun-path diagram and shading mask protractor are well known graphic formats that have traditionally been used by architects and engineers to analyze whether or not a solar shading device will block direct sunlight on a given point... 1990), SOMBRERO (Schnieders et al. 1997), AWNSHADE (McCluney 1995), SOLAR-2 (Sheu 1986), SUNPATH (McCluney 1995), and SUNSPEC (McCluney 1995) programs. OPAQUE (Abouella and Milne 1990), developed by the Department of Architecture at UCLA, draws a...

Oh, K. W.; Haberl, J. S.; Degelman, L. O.

2000-01-01T23:59:59.000Z

239

Design of the commissioning filter/mask/window assembly for undulator beamline front ends at the Advanced Photon Source  

SciTech Connect (OSTI)

A compact filter/mask/window assembly has been designed for undulator beamline commissioning activity at the Advanced Photon Source beamlines. The assembly consists of one 300-{mu}m graphite filter, one 127-{mu}m CVD diamond filter and two 250-{mu}m beryllium windows. A water-cooled Glidcop fixed mask with a 4.5-mm {times} 4.5-mm output optical aperture and a 0.96-mrad {times} 1.6-mrad beam missteering acceptance is a major part in the assembly. The CVD diamond filter which is mounted on the downstream side of the fixed mask is designed to also function as a transmitting x-ray beam position monitor. The sum signal from the latter can be used to monitor the physical condition of the graphite filter and prevent any possible chain reaction damage to the beryllium windows downstream. In this paper, the design concept as well as the detailed structural design of the commissioning window are presented. Further applications of the commissioning window commissioning window components are also discussed.

Shu, D.; Kuzay, T.M.

1995-10-20T23:59:59.000Z

240

A Close Companion Search around L Dwarfs using Aperture Masking Interferometry and Palomar Laser Guide Star Adaptive Optics  

E-Print Network [OSTI]

We present a close companion search around sixteen known early-L dwarfs using aperture masking interferometry with Palomar laser guide star adaptive optics. The use of aperture masking allows the detection of close binaries, corresponding to projected physical separations of 0.6-10.0 AU for the targets of our survey. This survey achieved median contrast limits of Delta_K ~ 2.3 for separations between 1.2 - 4 lambda/D, and Delta_K ~ 1.4 at (2/3)lambda/D. We present four candidate binaries detected with moderate to high confidence (90-98%). Two have projected physical separations less than 1.5 AU. This may indicate that tight-separation binaries contribute more significantly to the binary fraction than currently assumed, consistent with spectroscopic and photometric overluminosity studies. Ten targets of this survey have previously been observed with the Hubble Space Telescope as part of companion searches. We use the increased resolution of aperture masking to search for close or dim companions that would be o...

Bernat, David; Ireland, Michael; Tuthill, Peter; Martinache, Frantz; Angione, John; Burruss, Rick S; Cromer, John L; Dekany, Richard G; Guiwits, Stephen R; Henning, John R; Hickey, Jeff; Kibblewhite, Edward; McKenna, Daniel L; Moore, Anna M; Petrie, Harold L; Roberts, Jennifer; Shelton, J Chris; Thicksten, Robert P; Trinh, Thang; Tripathi, Renu; Troy, Mitchell; Truong, Tuan; Velur, Viswa; Lloyd, James P

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Improved repeat identification and masking in Dipterans Christopher D. Smith1,2,,*, Robert C. Edgar3,, Mark D. Yandell4, Douglas R. Smith5, Susan  

E-Print Network [OSTI]

Improved repeat identification and masking in Dipterans Christopher D. Smith1,2,,*, Robert C. Edgar3,, Mark D. Yandell4, Douglas R. Smith5, Susan E. Celniker2, Eugene W. Myers6,7, and Gary H. Karpen2

Yandell, Mark

242

The Effects of Oxygen Plasma on the Chemical Composition and Morphology of the Ru Capping Layer of the Extreme Ultraviolet (EUV) Mask Blanks  

E-Print Network [OSTI]

P-5B-03 The effects of oxygen plasma on the chemicalRu) mask surface after oxygen plasma treatment using surfacein the subsurface oxygen concentration, Ru oxidation and

Belau, Leonid

2009-01-01T23:59:59.000Z

243

Lithography High-Resolution Soft Lithography: Enabling  

E-Print Network [OSTI]

from photocurable perfluoropolyethers (PFPEs).[6] PFPE-based materials are liquids at room temperature

Carter, Kenneth

244

Cloud Detection with MODIS, Part I: Improvements in the MODIS Cloud Mask for Collection 5 *Richard A. Frey, Steven A. Ackerman, Yinghui Liu, Kathleen I. Strabala, Hong Zhang,  

E-Print Network [OSTI]

Cloud Detection with MODIS, Part I: Improvements in the MODIS Cloud Mask for Collection 5 *Richard.frey@ssec.wisc.edu August 2007 #12;ABSTRACT Significant improvements have been made to the MODIS cloud mask (MOD35 and MYD35 to the 3.9-12 m and 11-12 m cloud tests. More non-MODIS ancillary input data has been added. Land and sea

Sheridan, Jennifer

245

Sandia National Laboratories: Defect-Carrier Interactions  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -the Mid-Infrared0EnergySandia InvolvesDOE-BER NASA AwardDefect-Carrier Interactions

246

Physisorption of molecular hydrogen on carbon nanotube with vacant defects  

SciTech Connect (OSTI)

Physisorption of molecular hydrogen on single-walled carbon nanotubes (SWCNTs) is important for its engineering applications and hydrogen energy storage. Using molecular dynamics simulation, we study the physisorption of molecular hydrogen on a SWCNT with a vacant defect, focusing on the effect of the vacant defect size and external parameters such as temperature and pressure. We find that hydrogen can be physisorbed inside a SWCNT through a vacant defect when the defect size is above a threshold. By controlling the size of the defects, we are able to extract hydrogen molecules from a gas mixture and store them inside the SWCNT. We also find that external parameters, such as low temperature and high pressure, enhance the physisorption of hydrogen molecules inside the SWCNT. In addition, the storage efficiency can be improved by introducing more defects, i.e., reducing the number of carbon atoms on the SWCNT.

Sun, Gang; Shen, Huaze; Wang, Enge; Xu, Limei, E-mail: limei.xu@pku.edu.cn [International Center for Quantum Materials and School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Tangpanitanon, Jirawat [University of Cambridge, Cambridge, Cambridgeshire CB2 1TP (United Kingdom); Wen, Bo [International Center for Quantum Materials and School of Physics, Peking University, Beijing 100871 (China); Beijing Computational Science Research Center, Heqing Street, Haidian District, Beijing 100084 (China); Xue, Jianming [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Center for Applied Physics and Technology, Peking University, Beijing 100871 (China)

2014-05-28T23:59:59.000Z

247

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

248

The case against scaling defect models of cosmic structure formation  

E-Print Network [OSTI]

We calculate predictions from defect models of structure formation for both the matter and Cosmic Microwave Background (CMB) over all observable scales. Our results point to a serious problem reconciling the observed large-scale galaxy distribution with the COBE normalization, a result which is robust for a wide range of defect parameters. We conclude that standard scaling defect models are in conflict with the data, and show how attempts to resolve the problem by considering non-scaling defects would require radical departures from the standard scaling picture.

Andreas Albrecht; Richard A. Battye; James Robinson

1997-07-11T23:59:59.000Z

249

Nonradiative coherent carrier captures and defect reaction at deep-level defects via phonon-kick mechanism  

SciTech Connect (OSTI)

We simulated the time evolution of electron-lattice coupling mode, and a series of nonradiative carrier captures by a deep-level defect in a semiconductor. For lattice relaxation energy of the order of the band gap, a series of coherent (athermal) electron and hole captures by a defect is possible for high carrier densities, which results in an inflation in the induced lattice vibration, which in turn enhances a defect reaction.

Wakita, Masaki; Suzuki, Kei; Shinozuka, Yuzo [Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510 (Japan)

2014-02-21T23:59:59.000Z

250

Energetics of Defects on Graphene through Fluorination  

SciTech Connect (OSTI)

In the present study, we used FGS[5] as the substrate and implemented low temperature (<=150 oC) direct fluorination on graphene sheets. The fluorine content has been modulated to investigate the formation mechanism of different functional groups such as C-F, CF2, O-CF2 and (C=O)F during the fluorination process. The detailed structure and chemical bonds were simulated theoretically and quantified experimentally by using density function theory (DFT) calculations and NMR techniques, respectively. The adjustable power/energy ratio from fluorinated graphene as cathode for primary lithium batteries is also discussed. From a combination of NMR spectroscopy and theoretical calculation, we conclude that the topological defects without oxygen containing groups provide most of the reactive sites to react with F. FGS also contain a small number of COOH groups which contribute for the fluorination reaction. Hydroxyl or epoxy groups contribute to another fraction of the reaction products.

Xiao, Jie; Meduri, Praveen; Chen, Honghao; Wang, Zhiguo; Gao, Fei; Hu, Jian Z.; Feng, Ju; Hu, Mary Y.; Dai, Sheng; Brown, Suree; Adcock, Jamie L.; Deng, Zhiqun; Liu, Jun; Graff, Gordon L.; Aksay, Ilhan A.; Zhang, Jiguang

2014-04-01T23:59:59.000Z

251

Science & Technology Review September/October 2008  

SciTech Connect (OSTI)

This issue has the following articles: (1) Answering Scientists Most Audacious Questions--Commentary by Dona Crawford; (2) Testing the Accuracy of the Supernova Yardstick--High-resolution simulations are advancing understanding of Type Ia supernovae to help uncover the mysteries of dark energy; (3) Developing New Drugs and Personalized Medical Treatment--Accelerator mass spectrometry is emerging as an essential tool for assessing the effects of drugs in humans; (4) Triage in a Patch--A painless skin patch and accompanying detector can quickly indicate human exposure to biological pathogens, chemicals, explosives, or radiation; and (5) Smoothing Out Defects for Extreme Ultraviolet Lithography--A process for smoothing mask defects helps move extreme ultraviolet lithography one step closer to creating smaller, more powerful computer chips.

Bearinger, J P

2008-07-21T23:59:59.000Z

252

Simple intrinsic defects in InAs : numerical predictions.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

Schultz, Peter Andrew

2013-03-01T23:59:59.000Z

253

Understanding of Defect Physics in Polycrystalline Photovoltaic Materials: Preprint  

SciTech Connect (OSTI)

The performance of thin-film solar cells is influenced by the quality of interfaces and formation of defects such as point defects, stacking faults, twins, dislocations, and grain boundaries. It is important to understand the defect physics so that appropriate methods may be developed to suppress the formation of harmful defects. Here, we review our understanding of defect physics in thin-film photovoltaic (PV) materials such as Si, CdTe, Cu(In,Ga)Se2 (CIGS), Cu2ZnSnSe2 (CZTSe), and Cu2ZnSnS2 (CZTS) using the combination of nanoscale electron microscopy characterization and density-functional theory (DFT). Although these thin-film PV materials share the same basic structural feature - diamond structure based - the defect physics in them could be very different. Some defects, such as stacking faults and special twins, have similar electronic properties in these thin-film materials. However, some other defects, such as grain boundaries and interfaces, have very different electronic properties in these materials. For example, grain boundaries produce harmful deep levels in Si and CdTe, but they do not produce significant deep levels in CIGS, CZTSe, and CZTS. These explain why passivation is critical for Si and CdTe solar cells, but is less important in CIS and CZTS solar cells. We further provide understanding of the effects of interfaces on the performance of solar cells made of these PV materials.

Yan, Y.

2011-07-01T23:59:59.000Z

254

Apple Defect Segmentation by Artificial Neural Networks Devrim Unay a  

E-Print Network [OSTI]

Apple Defect Segmentation by Artificial Neural Networks Devrim Unay a Bernard Gosselin a a TCTS Lab-colored apple fruits performed by several artificial neural networks. Pixel-wise classification approach apple defects. 1 Introduction Quality of apple fruits depends on size, color, shape and presence

Dupont, Stéphane

255

CHARACTERIZATION OF VIBRATIONINDUCED IMAGE DEFECTS IN INPUT SCANNERS  

E-Print Network [OSTI]

) by dynamic errors of gears, timing bets, and motors, and indirectly by structural vibrations induced by gearsCHARACTERIZATION OF VIBRATION­INDUCED IMAGE DEFECTS IN INPUT SCANNERS Robert P. Loce George Wolberg. Keywords: image defects, digital documents, scanned documents, vibrations, motion quality 1. INTRODUCTION

Wolberg, George

256

Ultrasonic generator and detector using an optical mask having a grating for launching a plurality of spatially distributed, time varying strain pulses in a sample  

DOE Patents [OSTI]

A method and a system are disclosed for determining at least one characteristic of a sample that contains a substrate and at least one film disposed on or over a surface of the substrate. The method includes a first step of placing a mask over a free surface of the at least one film, where the mask has a top surface and a bottom surface that is placed adjacent to the free surface of the film. The bottom surface of the mask has formed therein or thereon a plurality of features for forming at least one grating. A next step directs optical pump pulses through the mask to the free surface of the film, where individual ones of the pump pulses are followed by at least one optical probe pulse. The pump pulses are spatially distributed by the grating for launching a plurality of spatially distributed, time varying strain pulses within the film, which cause a detectable change in optical constants of the film. A next step detects a reflected or a transmitted portion of the probe pulses, which are also spatially distributed by the grating. A next step measures a change in at least one characteristic of at least one of reflected or transmitted probe pulses due to the change in optical constants, and a further step determines the at least one characteristic of the sample from the measured change in the at least one characteristic of the probe pulses. An optical mask is also disclosed herein, and forms a part of these teachings.

Maris, Humphrey J. (Barrington, RI)

2003-01-01T23:59:59.000Z

257

Ultrasonic generator and detector using an optical mask having a grating for launching a plurality of spatially distributed, time varying strain pulses in a sample  

DOE Patents [OSTI]

A method and a system are disclosed for determining at least one characteristic of a sample that contains a substrate and at least one film disposed on or over a surface of the substrate. The method includes a first step of placing a mask over a free surface of the at least one film, where the mask has a top surface and a bottom surface that is placed adjacent to the free surface of the film. The bottom surface of the mask has formed therein or thereon a plurality of features for forming at least one grating. A next step directs optical pump pulses through the mask to the free surface of the film, where individual ones of the pump pulses are followed by at least one optical probe pulse. The pump pulses are spatially distributed by the grating for launching a plurality of spatially distributed, time varying strain pulses within the film, which cause a detectable change in optical constants of the film. A next step detects a reflected or a transmitted portion of the probe pulses, which are also spatially distributed by the grating. A next step measures a change in at least one characteristic of at least one of reflected or transmitted probe pulses due to the change in optical constants, and a further step determines the at least one characteristic of the sample from the measured change in the at least one characteristic of the probe pulses. An optical mask is also disclosed herein, and forms a part of these teachings.

Maris, Humphrey J. (Barrington, RI)

2002-01-01T23:59:59.000Z

258

Point Defect Characterization in CdZnTe  

SciTech Connect (OSTI)

Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.

Gul,R.; Li, Z.; Bolotnikov, A.; Keeter, K.; Rodriguez, R.; James, R.

2009-03-24T23:59:59.000Z

259

Disentangling defects and sound modes in disordered solids  

E-Print Network [OSTI]

We develop a new method to isolate localized defects from extended vibrational modes in disordered solids. This method augments particle interactions with an artificial potential that acts as a high-pass filter: it preserves small-scale structures while pushing extended vibrational modes to higher frequencies. The low-frequency modes that remain are "bare" defects; they are exponentially localized without the quadrupolar tails associated with elastic interactions. We identify a robust definition for the energy barrier associated with each defect, which is an important parameter in continuum models for plasticity. Surprisingly, we find that the energy barriers associated with "bare" defects are generally higher than those for defects decorated with elastic tails, suggesting that elastic interactions may help to constitutively activate particle rearrangements.

Sven Wijtmans; M. Lisa Manning

2015-02-05T23:59:59.000Z

260

The spatial evaluation of neighborhood clusters of birth defects  

SciTech Connect (OSTI)

Spatial statistics have recently been applied in epidemiology to evaluate clusters of cancer and birth defects. Their use requires a comparison population, drawn from the population at risk for disease, that may not always be readily available. In this dissertation the plausibility of using data on all birth defects, available from birth defects registries, as a surrogate for the spatial distribution of all live births in the analysis of clusters is assessed. Three spatial statistics that have been applied in epidemiologic investigations of clusters, nearest neighbor distance, average interpoint distance, and average distance to a fixed point, were evaluated by computer simulation for their properties in a unit square, and in a zip code region. Comparison of spatial distributions of live births and birth defects was performed by drawing samples of live births and birth defects from Santa Clara County, determining the street address at birth, geocoding this address and evaluating the resultant maps using various statistical techniques. The proposed method was then demonstrated on a previously confirmed cluster of oral cleft cases. All live births for the neighborhood were geocoded, as were all birth defects. Evaluation of this cluster using the nearest neighbor and average interpoint distance statistics was performed using randomization techniques with both the live births population and the birth defect population as comparison groups. 113 refs., 36 figs., 16 tabs.

Frisch, J.D.

1990-04-16T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Growth of individual carbon nanotubes on an array of TiN/Ni nanodots patterned by e-beam lithography and defined by dry etching for field emission application.  

E-Print Network [OSTI]

: Individual vertically aligned carbon nanotubes, Electron-beam lithography, Dry etching, Field emission and uniform electronic emission, cathodes based on vertically aligned carbon nanotubes (VACNTs) are patternedGrowth of individual carbon nanotubes on an array of TiN/Ni nanodots patterned by e

Boyer, Edmond

262

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

263

Diffraction of light by topological defects in liquid crystals  

E-Print Network [OSTI]

We study light scattering by a hedgehog-like and linear disclination topological defects in a nematic liquid crystal by a metric approach. Light propagating near such defects feels an effective metric equivalent to the spatial part of the global monopole and cosmic string geometries. We obtain the scattering amplitude and the differential and total scattering cross section for the case of the hedgehog defect, in terms of the characteristic parameters of the liquid crystal. Studying the disclination case, a cylindrical partial wave method is developed. As an application of the previous developments, we also examine the temperature influence on the localization of the diffraction patterns.

E. Pereira; F. Moraes

2010-11-22T23:59:59.000Z

264

Probing graphene defects and estimating graphene quality with optical microscopy  

SciTech Connect (OSTI)

We report a simple and accurate method for detecting graphene defects that utilizes the mild, dry annealing of graphene/Cu films in air. In contrast to previously reported techniques, our simple approach with optical microscopy can determine the density and degree of dislocation of defects in a graphene film without inducing water-related damage or functionalization. Scanning electron microscopy, confocal Raman and atomic force microscopy, and X-ray photoelectron spectroscopy analysis were performed to demonstrate that our nondestructive approach to characterizing graphene defects with optimized thermal annealing provides rapid and comprehensive determinations of graphene quality.

Lai, Shen [SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 440-746 (Korea, Republic of); Center for Human Interface Nanotechnology (HINT), Suwon 440-746 (Korea, Republic of); Kyu Jang, Sung [SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 440-746 (Korea, Republic of); Jae Song, Young, E-mail: yjsong@skku.edu [SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan University (SKKU), Suwon 440-746 (Korea, Republic of); Lee, Sungjoo, E-mail: leesj@skku.edu [SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 440-746 (Korea, Republic of); Center for Human Interface Nanotechnology (HINT), Suwon 440-746 (Korea, Republic of); College of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746 (Korea, Republic of)

2014-01-27T23:59:59.000Z

265

E-Print Network 3.0 - atomic scale defect Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

assembled DNA nanostructures. Atomic force microscope (AFM) images are used... of defect identification. 4.1 Defect ... Source: Chakrabarty, Krishnendu - Department of Electrical...

266

Modeling and experimental characterization of stepped and v-shaped (311) defects in silicon  

SciTech Connect (OSTI)

We propose an atomistic model to describe extended (311) defects in silicon. It is based on the combination of interstitial and bond defect chains. The model is able to accurately reproduce not only planar (311) defects but also defect structures that show steps, bends, or both. We use molecular dynamics techniques to show that these interstitial and bond defect chains spontaneously transform into extended (311) defects. Simulations are validated by comparing with precise experimental measurements on actual (311) defects. The excellent agreement between the simulated and experimentally derived structures, regarding individual atomic positions and shape of the distinct structural (311) defect units, provides strong evidence for the robustness of the proposed model.

Marqués, Luis A., E-mail: lmarques@ele.uva.es; Aboy, María [Departamento de Electrónica, Universidad de Valladolid, E.T.S.I. de Telecomunicación, 47011 Valladolid (Spain); Dudeck, Karleen J.; Botton, Gianluigi A. [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Knights, Andrew P. [Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Gwilliam, Russell M. [Surrey Ion Beam Centre, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

2014-04-14T23:59:59.000Z

267

E-Print Network 3.0 - automatic defect detection Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Food Packages Using the Ultrasonic Contrast Summary: a signicant impact on the DBAI value. The utility of DBAI for detecting defects makes it a useful... detection of defects....

268

Do the Defects Make It Work? Defect Engineering in Pi-Conjugated Polymers and Their Solar Cells: Preprint  

SciTech Connect (OSTI)

The charged defect density in common pi-conjugated polymers such as poly(3-hexylthiophene), P3HT, is around 1018 cm-3. Despite, or perhaps because of, this huge defect density, bulk heterojunction solar cells made from these polymers and a C60 derivative such as PCBM exhibit some of the highest efficiencies (~5%) yet obtained in solid state organic photovoltaic cells. We discuss defects in molecular organic semiconductors and in pi-conjugated polymers. These defects can be grouped in two categories, covalent and noncovalent. Somewhat analogous to treating amorphous silicon with hydrogen, we introduce chemical methods to modify the density and charge of the covalent defects in P3HT by treating it with electrophiles such as dimethyl sulfate and nucleophiles such as sodium methoxide. The effects of these treatments on the electrical and photovoltaic properties and stability of organic PV cells is discussed in terms of the change in the number and chemical properties of the defects. Finally, we address the question of whether the efficiency of OPV cells requires the presence of these defects which function as adventitious p-type dopants. Their presence relieves the resistance limitations usually encountered in cleaner organic semiconductors and can create built-in electric fields at junctions.

Wang, D.; Reese, M.; Kopidakis N.; Gregg, B. A.

2008-05-01T23:59:59.000Z

269

Solvent Immersion Imprint Lithography  

SciTech Connect (OSTI)

The mechanism of polymer disolution was explored for polymer microsystem prototyping, including microfluidics and optofluidics. Polymer films are immersed in a solvent, imprinted and finally brought into contact with a non-modified surface to permanently bond. The underlying polymer-solvent interactions were experimentally and theoretically investigated, and enabled rapid polymer microsystem prototyping. During imprinting, small molecule integration in the molded surfaces was feasible, a principle applied to oxygen sensing. Polystyrene (PS) was employed for microbiological studies at extreme environmental conditions. The thermophile anaerobe Clostridium Thermocellum was grown in PS pore-scale micromodels, revealing a double mean generation lifetime than under ideal culture conditions. Microsystem prototyping through directed polymer dissolution is simple and accessible, while simultaneous patterning, bonding, and surface/volume functionalization are possible in less than one minute.

Vasdekis, Andreas E.; Wilkins, Michael J.; Grate, Jay W.; Kelly, Ryan T.; Konopka, Allan; Xantheas, Sotiris S.; Chang, M. T.

2014-06-21T23:59:59.000Z

270

Nanoimprint Lithography | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas Conchas recoveryLaboratory | NationalJohn F. Geisz,AerialStaff NUGWedged Crater.Nanoimprint

271

Advances in Lithography  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc Documentation RUCProductstwrmrAre theAdministratorCFM LEAP Aircraft Enginesof

272

Heavy and Overweight Vehicle Defects Interim Report  

SciTech Connect (OSTI)

The Federal Highway Administration (FHWA), along with the Federal Motor Carrier Safety Administration (FMCSA), has an interest in overweight commercial motor vehicles, how they affect infrastructure, and their impact on safety on the nation s highways. To assist both FHWA and FMCSA in obtaining more information related to this interest, data was collected and analyzed from two separate sources. A large scale nationwide data collection effort was facilitated by the Commercial Vehicle Safety Alliance as part of a special study on overweight vehicles and an additional, smaller set, of data was collected from the state of Tennessee which included a much more detailed set of data. Over a six-month period, 1,873 Level I inspections were performed in 18 different states that volunteered to be a part of this study. Of the 1,873 inspections, a vehicle out-of-service (OOS) violation was found on 44.79% of the vehicles, a rate significantly higher than the national OOS rate of 27.23%. The main cause of a vehicle being placed OOS was brake-related defects, with approximately 30% of all vehicles having an OOS brake violation. Only about 4% of vehicles had an OOS tire violation, and even fewer had suspension and wheel violations. Vehicle weight violations were most common on an axle group as opposed to a gross vehicle weight violation. About two thirds of the vehicles cited with a weight violation were overweight on an axle group with an average amount of weight over the legal limit of about 2,000 lbs. Data collection is scheduled to continue through January 2014, with more potentially more states volunteering to collect data. More detailed data collections similar to the Tennessee data collection will also be performed in multiple states.

Siekmann, Adam [ORNL; Capps, Gary J [ORNL

2012-12-01T23:59:59.000Z

273

Quality improvement and control based on defect reduction  

E-Print Network [OSTI]

This thesis addresses the quality improvement in a printing process at a food packaging company now experiencing hundreds of printing defects. Methodologies of Define, Measure, Analyze, Improve, and Control (DMAIC), and ...

Dai, Qi, M. Eng. Massachusetts Institute of Technology

2010-01-01T23:59:59.000Z

274

Spin properties of very shallow nitrogen vacancy defects in diamond  

E-Print Network [OSTI]

We investigate spin and optical properties of individual nitrogen vacancy centers located within 1–10 nm from the diamond surface. We observe stable defects with a characteristic optically detected magnetic-resonance ...

Ofori-Okai, Benjamin Kwasi

275

Design and process solutions for decreasing vendor defects  

E-Print Network [OSTI]

Why do some new initiatives fail while others succeed? This thesis attempts to answer this complex question by investigating the failure of a defect tracking initiative at Amazon and examining how a reintroduction of the ...

Joyce, Michael (Michael Sagar)

2013-01-01T23:59:59.000Z

276

Role of defects in III-nitride based electronics  

SciTech Connect (OSTI)

The LDRD entitled ``Role of Defects in III-Nitride Based Devices'' is aimed to place Sandia National Laboratory at the forefront of the field of GaN materials and devices by establishing a scientific foundation in areas such as material growth, defect characterization/modeling, and processing (metalization and etching) chemistry. In this SAND report the authors summarize their studies such as (1) the MOCVD growth and doping of GaN and AlGaN, (2) the characterization and modeling of hydrogen in GaN, including its bonding, diffusion, and activation behaviors, (3) the calculation of energetic of various defects including planar stacking faults, threading dislocations, and point defects in GaN, and (4) dry etching (plasma etching) of GaN (n- and p-types) and AlGaN. The result of the first AlGaN/GaN heterojunction bipolar transistor is also presented.

HAN,JUNG; MYERS JR.,SAMUEL M.; FOLLSTAEDT,DAVID M.; WRIGHT,ALAN F.; CRAWFORD,MARY H.; LEE,STEPHEN R.; SEAGER,CARLETON H.; SHUL,RANDY J.; BACA,ALBERT G.

2000-01-01T23:59:59.000Z

277

RIS-M-2478 ELECTRICAL CONDUCTIVITY, DEFECT STRUCTURE AND  

E-Print Network [OSTI]

BACKGROUND 7 THEORY 8 MODEL FOR CALCULATION OF THEORETICAL DENSITY IN THE SYSTEM 10 EXPERIMENTAL 12 sensors, fuel c e l l s and electrolyzers. The defect responsible for the high conductivity

278

The geodesic rule for higher codimensional global defects  

E-Print Network [OSTI]

We generalize the geodesic rule to the case of formation of higher codimensional global defects. Relying on energetic arguments, we argue that, for such defects, the geometric structures of interest are the totally geodesic submanifolds. On the other hand, stochastic arguments lead to a diffusion equation approach, from which the geodesic rule is deduced. It turns out that the most appropriate geometric structure that one should consider is the convex hull of the values of the order parameter on the causal volumes whose collision gives rise to the defect. We explain why these two approaches lead to similar results when calculating the density of global defects by using a theorem of Cheeger and Gromoll. We present a computation of the probability of formation of strings/vortices in the case of a system, such as nematic liquid crystals, whose vacuum is $\\mathbb{R}P^2$.

Anthony J. Creaco; Nikos Kalogeropoulos

2008-05-15T23:59:59.000Z

279

Modeling rough energy landscapes in defected condensed matter  

E-Print Network [OSTI]

This dissertation is a computational and theoretical investigation of the behavior of defected condensed matter and its evolution over long time scales. The thesis provides original contributions to the methodology used ...

Monasterio Velásquez, Paul Rene

2010-01-01T23:59:59.000Z

280

Liability for Defective Documentation FloridaInstitute of Technology  

E-Print Network [OSTI]

Liability for Defective Documentation Cem Kaner FloridaInstitute of Technology 150 West University behind its claims. False claims in documentation might subject the manufacturer to liability for breach Engineering]: Distribution, Maintenance and Enhancement ­ documentation. General Terms Documentation, Human

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

COMMUNICATION Escherichia coli tatC Mutations that Suppress Defective  

E-Print Network [OSTI]

COMMUNICATION Escherichia coli tatC Mutations that Suppress Defective Twin-Arginine Transporter@che.utexas.edu. Abbreviations used: Tat, twin-arginine translocation; MBP, maltose-binding protein; GFP, green fluorescence

Georgiou, George

282

Topological defect motifs in two-dimensional Coulomb clusters  

E-Print Network [OSTI]

The most energetically favourable arrangement of low-density electrons in an infinite two-dimensional plane is the ordered triangular Wigner lattice. However, in most instances of contemporary interest one deals instead with finite clusters of strongly interacting particles localized in potential traps, for example, in complex plasmas. In the current contribution we study distribution of topological defects in two-dimensional Coulomb clusters with parabolic lateral confinement. The minima hopping algorithm based on molecular dynamics is used to efficiently locate the ground- and low-energy metastable states, and their structure is analyzed by means of the Delaunay triangulation. The size, structure and distribution of geometry-induced lattice imperfections strongly depends on the system size and the energetic state. Besides isolated disclinations and dislocations, classification of defect motifs includes defect compounds --- grain boundaries, rosette defects, vacancies and interstitial particles. Proliferatio...

Radzvilavi?ius, A; 10.1088/0953-8984/23/38/385301

2012-01-01T23:59:59.000Z

283

Defects and impurities in graphene-like materials  

E-Print Network [OSTI]

Graphene-like materials could be used in the fabrication of electronic and optoelectronic devices, gas sensors, biosensors, and batteries for energy storage. Since it is almost impossible to work with defect-free or ...

Terrones, Mauricio

284

Wave propagation in periodic lattices with defects of smaller dimension  

E-Print Network [OSTI]

The procedure of evaluating of the spectrum for discrete periodic operators perturbed by operators of smaller dimensions is obtained. This result allows to obtain propagative, guided, localised spectra for different kind of physical operators on graphs with defects.

A. A. Kutsenko

2013-05-20T23:59:59.000Z

285

Defect reaction network in Si-doped InP : numerical predictions.  

SciTech Connect (OSTI)

This Report characterizes the defects in the defect reaction network in silicon-doped, n-type InP deduced from first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si-doped InP until culminating in immobile reaction products. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon-related defects in the reaction network. This Report serves to extend the results for intrinsic defects in SAND 2012-3313: %E2%80%9CSimple intrinsic defects in InP: Numerical predictions%E2%80%9D to include Si-containing simple defects likely to be present in a radiation-induced defect reaction sequence.

Schultz, Peter Andrew

2013-10-01T23:59:59.000Z

286

Automated defect spatial signature analysis for semiconductor manufacturing process  

DOE Patents [OSTI]

An apparatus and method for performing automated defect spatial signature alysis on a data set representing defect coordinates and wafer processing information includes categorizing data from the data set into a plurality of high level categories, classifying the categorized data contained in each high level category into user-labeled signature events, and correlating the categorized, classified signature events to a present or incipient anomalous process condition.

Tobin, Jr., Kenneth W. (Harriman, TN); Gleason, Shaun S. (Knoxville, TN); Karnowski, Thomas P. (Knoxville, TN); Sari-Sarraf, Hamed (Knoxville, TN)

1999-01-01T23:59:59.000Z

287

Relative projective cover works for Broue's abelian defect group  

E-Print Network [OSTI]

University, Chiba, Japan Tue. 22 June, 2010 Joint work with J¨urgen M¨uller and Felix Noeske Brou´e's abelian that A is a block algebra of OG with a defect group P and that AN is a block algebra of ONG(P) which is the Brauer´e's abelian defect group conjecture holds for all primes p and for all block algebras of OG if G = Co3, where

Thévenaz, Jacques

288

Graphene materials having randomly distributed two-dimensional structural defects  

DOE Patents [OSTI]

Graphene-based storage materials for high-power battery applications are provided. The storage materials are composed of vertical stacks of graphene sheets and have reduced resistance for Li ion transport. This reduced resistance is achieved by incorporating a random distribution of structural defects into the stacked graphene sheets, whereby the structural defects facilitate the diffusion of Li ions into the interior of the storage materials.

2013-10-08T23:59:59.000Z

289

Gradient Improvement by Removal of Identified Local Defects  

SciTech Connect (OSTI)

Recent experience of ILC cavity processing and testing at Jefferson Lab has shown that some 9-cell cavities are quench limited at a gradient in the range of 15-25 MV/m. Further studies reveal that these quench limits are often correlated with sub-mm sized and highly localized geometrical defects at or near the equator weld. There are increasing evidence to show that these genetic defects have their origin in the material or in the electron beam welding process (for example due to weld irregularities or splatters on the RF surface and welding porosity underneath the surface). A local defect removal method has been proposed at Jefferson Lab by locally re-melting the niobium material. Several 1-cell cavities with known local defects have been treated by using the JLab local e-beam re-melting method, resulting in gradient and Q0 improvement. We also sent 9-cell cavities with known gradient limiting local defects to KEK for local grinding and to FNAL for global mechanical polishing. We report on the results of gradient improvements by removal of local defects in these cavities.

R.L. Geng, W.A. Clemens, C.A. Cooper, H. Hayano, K. Watanabe

2011-07-01T23:59:59.000Z

290

Crystal defect studies using x-ray diffuse scattering  

SciTech Connect (OSTI)

Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute precipitates are characterized by local electronic density changes at the defect sites and by distortions of the lattice structure surrounding the defects. The effect of these interruptions of the crystal lattice on the scattering of x-rays is considered in this paper, and examples are presented of the use of the diffuse scattering to study the defects. X-ray studies of self-interstitials in electron irradiated aluminum and copper are discussed in terms of the identification of the interstitial configuration. Methods for detecting the onset of point defect aggregation into dislocation loops are considered and new techniques for the determination of separate size distributions for vacancy loops and interstitial loops are presented. Direct comparisons of dislocation loop measurements by x-rays with existing electron microscopy studies of dislocation loops indicate agreement for larger size loops, but x-ray measurements report higher concentrations in the smaller loop range. Methods for distinguishing between loops and three-dimensional precipitates are discussed and possibilities for detailed studies considered. A comparison of dislocation loop size distributions obtained from integral diffuse scattering measurements with those from TEM show a discrepancy in the smaller sizes similar to that described above.

Larson, B.C.

1980-01-01T23:59:59.000Z

291

A detail study of defect models for cosmic structure formation  

E-Print Network [OSTI]

We calculate predictions from wide class of `active' models of cosmic structure formation which allows us to scan the space of possible defect models. We calculate the linear cold dark matter power spectrum and Cosmic Microwave Background (CMB) anisotropies over all observable scales using a full linear Einstein-Boltzmann code. Our main result, which has already been reported, points to a serious problem reconciling the observed amplitude of the large-scale galaxy distribution with the COBE normalization. Here, we describe our methods and results in detail. The problem is present for a wide range of defect parameters, which can be used to represent potential differences among defect models, as well as possible systematic numerical errors. We explicitly examine the impact of varying the defect model parameters and we show how the results substantiate these conclusions. The standard scaling defect models are in serious conflict with the current data, and we show how attempts to resolve the problem by considering non-scaling defects or modified stress-energy components would require radical departures from what has become the standard picture.

A. Albrecht; R. A. Battye; J. Robinson

1997-11-27T23:59:59.000Z

292

Application of a Theory for Generation of Soft X-Ray by Storage Rings and Its Use For X-Ray Lithography  

SciTech Connect (OSTI)

A theory has been developed for generation of soft X-ray transition radiation (TR) by storage ring synchrotrons. It takes into consideration that the dielectric constant of the TR target material is a complex number, utilizes an explicit expression for the number of passes of an injected electron through the target, and describes more precisely the absorption of TR in the target. Such TR can be used for performing X-ray lithography (XRL), and therefore a formula is included for the sensitivity of the photoresist used in XRL. TR targets for XRL can be optimized, based on finding a maximum of the resist sensitivity. Application of this theory to optimization of Mg target shows that a target containing only one Mg foil, with a thickness of about 245 nm is the best Mg target, for performing XRL by our storage ring synchrotron MIRRORCLE-20SX.

Minkov, D. [21st Century COE SLLS (Japan); Yamada, H. [21st Century COE SLLS (Japan); Ritsumeikan University (Japan); PPL Co. Ltd., 1-1-1 Nojihigashi, Kusatsu City, Shiga 525-8577 (Japan); Toyosugi, N.; Morita, M. [PPL Co. Ltd., 1-1-1 Nojihigashi, Kusatsu City, Shiga 525-8577 (Japan); Yamaguchi, T. [Ritsumeikan University (Japan)

2007-01-19T23:59:59.000Z

293

DEFECT ASSESSMENT USING CONFORMABLE ARRAY DATA  

SciTech Connect (OSTI)

The conformable array data acquisition system consists of the array, the data acquisition and analysis hardware, and the data acquisition and analysis software. The following decisions were made in the development of the system. Array design decisions include the following: (a) The flexible array board will be approximately 8 by 12 inches square with the active coil section confined to a smaller 6-inch-square section at the center of the board. The outer edges of the board will be used for switching and other circuitry. (b) The diameter of the array coils will be approximately 0.375 inch (9.5 mm). Data acquisition strategy includes: (a) The corrosion spots will be mapped by successive interrogations of the active section of the array board. Approximately 10,000 samples will be acquired for each coil. The 10,000 readings will be averaged to produce one lower-noise value for each coil. This will be repeated for each coil in the array in a sequential manner. The total corrosion image for the sector will be built from the individual coil data. (b) Corrosion larger than the operational portion of the array board will be measured using a grid technique. Uniquely identified areas in the grid will overlay a corroded area, and data collected for each area will be connected by the display and assessment software to form a composite image for the corroded area. (c) Defect assessment will be invoked on the corrosion image by ''boxing'' selected areas on the color contour map. Software decisions consisted of selecting the appropriate LABVIEW modules running in a Windows XP operating system to obtain the required functionality. This third quarterly report of the project presents the activity and conclusions reached to date. Specifically, the design of the conformable array was completed and work was started on obtaining the data acquisition hardware. Southwest Research Institute (SwRI) and Clock Spring{reg_sign} staff met at the SwRI facilities in June 2003 to discuss the project. The Clock Spring representative was given the latest version of the data acquisition and analysis software for evaluation. Comments were received.

Alfred E. Crouch

2003-07-01T23:59:59.000Z

294

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

295

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

296

Effects of a modified through-mask drinking system (MDS) on fluid intake during exercise in chemical protective gear. Report for January-May 1989  

SciTech Connect (OSTI)

This study was designed to evaluate the effects of a modified through-mask drinking system (MDS) on voluntary fluid consumption. Eighteen male volunteers walked on a treadmill (4.02 km/hr, 0 deg. grade, 50 min/hr for 6 hr) in a climatic chamber (dry bulb=32.6 deg C, wet bulb=17.5 deg C, 20.4% relative humidity, and windspeed=8.05 km/hr, producing a WBGT of 22.1 deg C). Subjects wore chemical protective gear (trousers, jacket, boots, gloves, and M17A1 protective mask) and were randomly assigned one of two through-mask and were randomly assigned one of two through-mask drinking systems: CS (n=9), the current gravity fed system or MDS (n=9), a prototype hand-pump drinking system. Because decontamination of the mask and drinking connections was performed prior to drinking, the overall use of the CS was rated significantly more difficult during both work and rest than the MDS. Failure to decontaminate connections prior to drinking was noted early in the trial in 2 soldiers using the CS suggesting an increase risk of accidental contamination associated with this system. Drinking with the MDS had no measurable adverse effect on hydration status of the test subjects: water intake rate, 0.36 L/hr (CS) and 0.42 L/hr (MDS); sweat rate, 0.63 L/hr (CS) and 0.67 L/hr (MDS); body weight loss, 0.32 %/hr (CS) and 0.31 %/hr (MDS).

Szlyk, P.C.; Sils, I.V.; Tharion, W.J.; Francesconi, R.P.; Mahnke, R.B.

1989-10-12T23:59:59.000Z

297

Systems and methods for forming defects on graphitic materials and curing radiation-damaged graphitic materials  

DOE Patents [OSTI]

Systems and methods are disclosed herein for forming defects on graphitic materials. The methods for forming defects include applying a radiation reactive material on a graphitic material, irradiating the applied radiation reactive material to produce a reactive species, and permitting the reactive species to react with the graphitic material to form defects. Additionally, disclosed are methods for removing defects on graphitic materials.

Ryu, Sunmin; Brus, Louis E.; Steigerwald, Michael L.; Liu, Haitao

2012-09-25T23:59:59.000Z

298

Structure, defects, and strain in silicon-silicon oxide interfaces  

SciTech Connect (OSTI)

The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

Kova?evi?, Goran, E-mail: gkova@irb.hr; Pivac, Branko [Department of Materials Physics, Rudjer Boskovic Institute, Bijeni?ka 56, P.O.B. 180, HR-10002 Zagreb (Croatia)

2014-01-28T23:59:59.000Z

299

Invisible surface defects in a tight-binding lattice  

E-Print Network [OSTI]

Surface Tamm states arise in one-dimensional lattices from some defects at the lattice edge and their energy generally falls in a gap of the crystal. The defects at the surface change rather generally the phase of propagative Bloch waves scattered off at the lattice edge, so that an observer, far from the surface, can detect the existence of edge defects from e.g. time-of-flight measurements as a delay or an advancement of a Bloch wave packet. Here we show that a special class of defects can sustain surface Tamm states which are invisible, in a sense that reflected waves acquire the same phase as in a fully homogeneous lattice with no surface state. Surface states have an energy embedded into the tight-binding lattice band and show a lower than exponential (algebraic) localization. Like most of bound states in the continuum of von Neumann - Wigner type, such states are fragile and decay into resonance surface states in presence of perturbations or lattice disorder. The impact of structural lattice imperfections and disorder on the invisibility of the defects is investigated by numerical simulations.

Stefano Longhi

2014-06-24T23:59:59.000Z

300

Apparatus and method for defect testing of integrated circuits  

DOE Patents [OSTI]

An apparatus and method for defect and failure-mechanism testing of integrated circuits (ICs) is disclosed. The apparatus provides an operating voltage, V.sub.DD, to an IC under test and measures a transient voltage component, V.sub.DDT, signal that is produced in response to switching transients that occur as test vectors are provided as inputs to the IC. The amplitude or time delay of the V.sub.DDT signal can be used to distinguish between defective and defect-free (i.e. known good) ICs. The V.sub.DDT signal is measured with a transient digitizer, a digital oscilloscope, or with an IC tester that is also used to input the test vectors to the IC. The present invention has applications for IC process development, for the testing of ICs during manufacture, and for qualifying ICs for reliability.

Cole, Jr., Edward I. (Albuquerque, NM); Soden, Jerry M. (Placitas, NM)

2000-01-01T23:59:59.000Z

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301

Apparatus and method for defect testing of integrated circuits  

SciTech Connect (OSTI)

An apparatus and method for defect and failure-mechanism testing of integrated circuits (ICs) is disclosed. The apparatus provides an operating voltage, V(DD), to an IC under test and measures a transient voltage component, V(DDT), signal that is produced in response to switching transients that occur as test vectors are provided as inputs to the IC. The amplitude or time delay of the V(DDT) signal can be used to distinguish between defective and defect-free (i.e. known good) ICs. The V(DDT) signal is measured with a transient digitizer, a digital oscilloscope, or with an IC tester that is also used to input the test vectors to the IC. The present invention has applications for IC process development, for the testing of ICs during manufacture, and for qualifying ICs for reliability.

Cole, E.I. Jr.; Soden, J.M.

2000-02-29T23:59:59.000Z

302

Ultrasonic imaging system for in-process fabric defect detection  

DOE Patents [OSTI]

An ultrasonic method and system are provided for monitoring a fabric to identify a defect. A plurality of ultrasonic transmitters generate ultrasonic waves relative to the fabric. An ultrasonic receiver means responsive to the generated ultrasonic waves from the transmitters receives ultrasonic waves coupled through the fabric and generates a signal. An integrated peak value of the generated signal is applied to a digital signal processor and is digitized. The digitized signal is processed to identify a defect in the fabric. The digitized signal processing includes a median value filtering step to filter out high frequency noise. Then a mean value and standard deviation of the median value filtered signal is calculated. The calculated mean value and standard deviation are compared with predetermined threshold values to identify a defect in the fabric.

Sheen, Shuh-Haw (Naperville, IL); Chien, Hual-Te (Naperville, IL); Lawrence, William P. (Downers Grove, IL); Raptis, Apostolos C. (Downers Grove, IL)

1997-01-01T23:59:59.000Z

303

I{sub DDQ} Testing and Defect Classes: A Tutorial  

SciTech Connect (OSTI)

I{sub DDQ} testing of CMOSICs is a technique for production quality and reliability improvement, design validation, and failure analysis. The origin and basic concepts of I{sub DDQ} testing are reviewed. The relationship of I{sub DDQ} testing to other test methods is considered in the context of the whole IC life cycle from design, fabrication, and test through end use. A comprehensive test strategy is described that uses defect classes based on defect electrical properties rather than traditional fault models.

Soden, J.M. [Sandia National Labs., Albuquerque, NM (United States); Hawkins, C.F. [New Mexico State Univ., Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering

1994-12-31T23:59:59.000Z

304

On the defect induced gauge and Yukawa fields in graphene  

E-Print Network [OSTI]

We consider lattice deformations (both continuous and topological) in the hexagonal lattice Hubbard model in the tight binding approximation to graphene, involving operators with the range up to next-to-neighbor. In the low energy limit, we find that these deformations give rise to couplings of the electronic Dirac field to an external scalar (Yukawa) and gauge fields. The fields are expressed in terms of original defects. As a by-product we establish that the next-to-nearest order is the minimal range of deformations which produces the complete gauge and scalar fields. We consider an example of Stone--Wales defect, and find the associated gauge field.

Corneliu Sochichiu

2011-03-08T23:59:59.000Z

305

On the material geometry of continuously defective corrugated graphene sheets  

E-Print Network [OSTI]

Geometrical objects describing the material geometry of continuously defective graphene sheets are introduced and their compatibility conditions are formulated. Effective edge dislocations embedded in the Riemann-Cartan material space and defined by their scalar density and by local Burgers vectors, are considered. The case of secondary curvature-type defects created by this distribution of dislocations is analysed in terms of the material space. The variational geometry of the material space closely related with the existence of a characteristic length parameter is proposed. The formula which describes, in a reference temperature, the influence of dislocations on the material Riemannian metric, is given.

Andrzej Trzesowski

2014-12-22T23:59:59.000Z

306

Improvements in Near-Terminator and Nocturnal Cloud Masks using Satellite Imager Data over the Atmospheric Radiation Measurement Sites  

SciTech Connect (OSTI)

Cloud detection using satellite measurements presents a big challenge near the terminator where the visible (VIS; 0.65 {micro}m) channel becomes less reliable and the reflected solar component of the solar infrared 3.9-{micro}m channel reaches very low signal-to-noise ratio levels. As a result, clouds are underestimated near the terminator and at night over land and ocean in previous Atmospheric Radiation Measurement (ARM) Program cloud retrievals using Geostationary Operational Environmental Satellite (GOES) imager data. Cloud detection near the terminator has always been a challenge. For example, comparisons between the CLAVR-x (Clouds from Advanced Very High Resolution Radiometer [AVHRR]) cloud coverage and Geoscience Laser Altimeter System (GLAS) measurements north of 60{sup o}N indicate significant amounts of missing clouds from AVHRR because this part of the world was near the day/night terminator viewed by AVHRR. Comparisons between MODIS cloud products and GLAS at the same regions also shows the same difficulty in the MODIS cloud retrieval (Pavolonis and Heidinger 2005). Consistent detection of clouds at all times of day is needed to provide reliable cloud and radiation products for ARM and other research efforts involving the modeling of clouds and their interaction with the radiation budget. To minimize inconsistencies between daytime and nighttime retrievals, this paper develops an improved twilight and nighttime cloud mask using GOES-9, 10, and 12 imager data over the ARM sites and the continental United States (CONUS).

Trepte, Q.Z.; Minnis, P.; Heck, P.W.; Palikonda, R.

2005-03-18T23:59:59.000Z

307

Empirical Evaluation of Defect Projection Models for Widely-deployed  

E-Print Network [OSTI]

, Reliability Engineering, Defect modeling, empirical research, COTS, open source software, maintenance resource. *Bonnie Ray and P. Santhanam are researchers at the Center for Software Engineering at IBM T. J. Watson Research Center. This research was supported by the National Science Foundation under Grand CCR-0086003

308

Empirical Evaluation of Defect Projection Models for Widelydeployed  

E-Print Network [OSTI]

, Reliability Engineering, Defect modeling, empirical research, COTS, open source software, maintenance resource. *Bonnie Ray and P. Santhanam are researchers at the Center for Software Engineering at IBM T. J. Watson Research Center. This research was supported by the National Science Foundation under Grand CCR­0086003

309

An Empirical Comparison of Field Defect Modeling Methods  

E-Print Network [OSTI]

Management, Measurement, Reliability, Experimentation, Defect modeling, empirical research, COTS, maintenance of Computer Science Carnegie Mellon University Pittsburgh PA, 15213 *Center for Software Engineering IBM T.J. Watson Research Center Hawthorne, NY 10532 This research was supported by the National Science Foundation

310

Defect of villous cytotrophoblast differentiation into syncytiotrophoblast in Down syndrome  

E-Print Network [OSTI]

Defect of villous cytotrophoblast differentiation into syncytiotrophoblast in Down syndrome FRENDO: evain@pharmacie.univ-paris5.fr Running title: Trophoblast and Down syndrome Key words: Trisomy 21 the formation and function of the ST in trisomy 21 (Down syndrome). We first used the in vitro model

Boyer, Edmond

311

Measuring Point Defect Density in Individual Carbon Nanotubes Using  

E-Print Network [OSTI]

based on defec- tive nanotubes also show improved sensitivity.7 Recently, high-energy electron and ionMeasuring Point Defect Density in Individual Carbon Nanotubes Using Polarization-Dependent X in carbon nanotubes (CNTs) dramatically alter their physical, mechani- cal, and electronic properties.1

Hitchcock, Adam P.

312

Preparation and characterization of low-defect surfaces  

SciTech Connect (OSTI)

Silver crystal surfaces with low defect densities were prepared electrochemically from aqueous solutions using capillary-growth techniques. These surfaces had low rates for the nucleation of new silver layers. The impedance of these inert silver/aqueous silver nitrate interfaces was used to determine silver adatom concentration and water dipole reorientation energetics.

Robinson, T.O.

1991-12-01T23:59:59.000Z

313

Modeling of three dimensional defects in integrated circuits  

E-Print Network [OSTI]

properties that result from the interaction between the IC and the defect size in two coordinate spaces: x-y and z. The approach is a natural extension to the concept of critical areas, namely, the extraction of critical volumes. Through the course...

Dani, Sameer Manohar

1993-01-01T23:59:59.000Z

314

Infrared photothermal radiometry of deep subsurface defects in semiconductor materials  

E-Print Network [OSTI]

Infrared photothermal radiometry of deep subsurface defects in semiconductor materials M. E. Rodri-resistivity Si wafer with a mechanical damage on the backsurface, probed from the front intact surface that the position of the underlying damage is well resolved in both images, with the phase image showing

Mandelis, Andreas

315

Convergence properties of the local defect correction method for parabolic  

E-Print Network [OSTI]

and, for a one-dimensional heat equation, we study its properties analytically. Numerical experiment of adaptive grid techniques. In adaptive grid methods, a fine grid spacing and a relatively small time step requirements are minimized. An adaptive grid technique of particular interest is the Local Defect Correction

Eindhoven, Technische Universiteit

316

Defects and Faults in Quantum Cellular Automata at Nano Scale  

E-Print Network [OSTI]

Defects and Faults in Quantum Cellular Automata at Nano Scale Mehdi Baradaran Tahoori, Mariam considerable research on quantum dot cellular automata (QCA) as a new computing scheme in the nano, quantum dot cellular automata (QCA) not only gives a solution at nano scale, but also it offers a new

317

Graphene defect formation by extreme ultraviolet generated photoelectrons  

SciTech Connect (OSTI)

We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80?eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transformation from microcrystalline to nanocrystalline and then further to amorphous carbon. Further, irradiation of graphene with increased water partial pressure does not significantly change the Raman spectra, which suggests that, in the extremely low energy range, e-beam induced chemical reactions between residual water and graphene are not the dominant mechanism driving defect formation in graphene. Single layer graphene, partially suspended over holes was irradiated with EUV radiation. By comparing with the Raman results from e-beam irradiation, it is concluded that the photoelectrons, especially those from the valence band, contribute to defect formation in graphene during irradiation.

Gao, A., E-mail: a.gao@utwente.nl; Lee, C. J.; Bijkerk, F. [FOM-Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein, The Netherlands and XUV Optics Group, MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

2014-08-07T23:59:59.000Z

318

Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography  

SciTech Connect (OSTI)

The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-07-07T23:59:59.000Z

319

Identification of structural defects in graphitic materials by gas-phase anisotropic etching  

E-Print Network [OSTI]

Identification of structural defects in graphitic materials by gas-phase anisotropic etching Shuang interest but also industrial importance, as the existence of surface and bulk defects inevitably influences

Zhang, Guangyu

320

Characterization of Defects in N-type 4H-SiC After High-Energy...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Characterization of Defects in N-type 4H-SiC After High-Energy N Ion Implantation by RBS-Channeling and Raman Spectroscopy. Characterization of Defects in N-type 4H-SiC After...

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Atomic Computer Simulations of Defect Migration in 3C and 4H...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Computer Simulations of Defect Migration in 3C and 4H-SiC. Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC. Abstract: Knowledge of the migration of intrinsic point...

322

EFFECTS OF MANUFACTURING DEFECTS ON THE STRENGTH OF TOUGHENED CARBON/EPOXY PREPREG COMPOSITES  

E-Print Network [OSTI]

EFFECTS OF MANUFACTURING DEFECTS ON THE STRENGTH OF TOUGHENED CARBON/EPOXY PREPREG COMPOSITES .......................................................................................11 Toughened Resin Systems

323

DISSERTATION Role of the Cu-O Defect in CdTe Solar Cells  

E-Print Network [OSTI]

OF THE CU-O DEFECT COMPLEX IN CDTE SOLAR CELLS Thin-film CdTe is one of the leading materials used the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdDISSERTATION Role of the Cu-O Defect in CdTe Solar Cells Submitted by Caroline R. Corwine

Sites, James R.

324

Robotic Tracking and Marking of Surface Shape Defects on Moving Automotive Panels  

E-Print Network [OSTI]

Robotic Tracking and Marking of Surface Shape Defects on Moving Automotive Panels Valentin Borsu defects for quality control in the automotive industry. In order to integrate a defects detection station. INTRODUCTION Quality control in the automotive industry is essential in order to ensure that the products meet

Payeur, Pierre

325

Stability of irradiation-induced point defects on walls of carbon nanotubes  

E-Print Network [OSTI]

Stability of irradiation-induced point defects on walls of carbon nanotubes A. V. Krasheninnikov #3 of atomic-scale irradiation- induced defects on walls of carbon nanotubes. Since atomic vacancies. Carbon nanotubes; C. Computational chemistry; Scanning tunneling microscopy; D. Defects; Electronic

Nordlund, Kai

326

Polarized Luminescence of Defects in CuGaSe2 Susanne Siebentritt1,2  

E-Print Network [OSTI]

). But for the whole group of I-III-VI2 chalcopyrite semiconductors no reliable identification of native defects by ESR been found in CuInSe2. [14] In the effort of relating the energy positions of the defects to defect. Res. Soc. Symp. Proc. Vol. 1012 © 2007 Materials Research Society 1012-Y13-01 #12;the experiment

Rockett, Angus

327

Residual Magnetic Flux Leakage: A Possible Tool for Studying Pipeline Defects  

E-Print Network [OSTI]

Residual Magnetic Flux Leakage: A Possible Tool for Studying Pipeline Defects Vijay Babbar1 weaker flux signals. KEY WORDS: Magnetic flux leakage; residual magnetization; pipeline defects; pipeline pipelines, which may develop defects such as corrosion pits as they age in service.(1) Under the ef- fect

Clapham, Lynann

328

Oxygen sublattice defect in cobalt oxide : formation, migration, charge localization and thermodynamic processes  

E-Print Network [OSTI]

643 Oxygen sublattice defect in cobalt oxide : formation, migration, charge localization of oxygen defects in CoO using classical simulations. The charge localization in the oxygen vacancy has]. The defect concentration in the oxygen sublattice is several orders of magnitude smaller, but never- theless

Paris-Sud XI, Université de

329

Ab Initio Studies of Vacancy-Defected Fullerenes and Single-Walled Carbon  

E-Print Network [OSTI]

Ab Initio Studies of Vacancy-Defected Fullerenes and Single-Walled Carbon Nanotubes LEI VINCENT LIU- vacancy-defected fullerenes, C60 and C70, and the single- and double-vacancy-defected single-walled carbon nanotubes (SWCNTs) were studied within density functional theory. The isomerization barriers for the single-vacancy

Wang, Yan Alexander

330

A simulation model of focus and radial servos in Compact Disc players with Disc surface defects  

E-Print Network [OSTI]

A simulation model of focus and radial servos in Compact Disc players with Disc surface defects P of controllers handling surface defects easier. A simulation model of Compact Disc players playing discs of the controller has been based on trial and error on real test systems since no simulation models of the defects

Wickerhauser, M. Victor

331

Defect production in tungsten: A comparison between field-ion microscopy and molecular-dynamics simulations  

E-Print Network [OSTI]

Defect production in tungsten: A comparison between field-ion microscopy and molecular defect production efficiencies obtained by FIM are a consequence of a surface effect, which greatly enhances defect production compared to that in the crystal interior. Comparison of clustering of vacancies

Nordlund, Kai

332

Native defects in MBE-grown CdTe  

SciTech Connect (OSTI)

Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz [Institute of Physics, Polish Academy of Sciences, Al. Lotników32/46, 02-668 Warsaw (Poland)

2013-12-04T23:59:59.000Z

333

Plasma-based localized defect for switchable coupling applications  

SciTech Connect (OSTI)

We report in this paper experimental measurements in order to validate the concept of switchable electromagnetic band gap filters based on plasma capillaries in the microwave regime. The plasma tube is embedded inside the structure to create a bistable (plasma on or off) punctual defect. We first investigate two kinds of discharge tubes: Ar-Hg and pure Ne, which we then use to experimentally achieve plasma-based reconfigurable applications, namely, a two-port coupler and a two-port demultiplexer.

Varault, Stefan [ONERA/DEMR, 2, Avenue Edouard Belin, BP4025, 31055 Toulouse Cedex (France); LAboratoire PLAsma et Conversion d'Energie (LAPLACE), UPS, CNRS, 118 Route de Narbonne, F-31062 Toulouse Cedex 9 (France); Gabard, Benjamin [STAE, 4, rue Emile Monso, BP84234, 31030 Toulouse, Cedex 4 (France); Sokoloff, Jerome [LAboratoire PLAsma et Conversion d'Energie (LAPLACE), UPS, CNRS, 118 Route de Narbonne, F-31062 Toulouse Cedex 9 (France); Bolioli, Sylvain [ONERA/DEMR, 2, Avenue Edouard Belin, BP4025, 31055 Toulouse Cedex (France)

2011-03-28T23:59:59.000Z

334

Light defection due to a charged, rotating body  

E-Print Network [OSTI]

According to GTR and subsequent developments in the field, it is known that there are three factors namely mass, rotation and charge that can influence the space-time geometry. Accordingly, we discuss the effect of space-time geometry of a charged, rotating body on the motion of the light ray. We obtained the expression for equatorial defection of light due to such a body up to fourth order term. In our expression for defection angle it is clear that charge can influence the path of light ray. We used the null geodesic approach of light ray for our calculation. If we set the charge to zero our expression of bending angle gets reduced to the Kerr equatorial bending angle.If we set rotation to zero our expression reduces to Resinner-Nordstr$\\ddot{o}$m defection angle and if we set both charge and rotation to zero our expression reduces to Schwarzschild bending angle. However, we get non-zero bending angle for a hypothetical massless, rotating, charged body.

Sarani Chakraborty; A. K. Sen

2014-06-05T23:59:59.000Z

335

Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels  

SciTech Connect (OSTI)

Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

Drummond, T.J.

1999-03-11T23:59:59.000Z

336

Nature of Radiation-Induced Defects in Quartz  

E-Print Network [OSTI]

Although quartz ($\\rm \\alpha$-form) is a mineral used in numerous applications wherein radiation exposure is an issue, the nature of the atomistic defects formed during radiation-induced damage have not been fully clarified. Especially, the extent of oxygen vacancy formation is still debated, which is an issue of primary importance as optical techniques based on charged oxygen vacancies have been utilized to assess the level of radiation damage in quartz. In this paper, molecular dynamics (MD) simulations are applied to study the effects of ballistic impacts on the atomic network of quartz. We show that the defects that are formed mainly consist of over-coordinated Si and O, as well as Si--O connectivity defects, e.g., small Si--O rings and edge-sharing Si tetrahedra. Oxygen vacancies, on the contrary, are found in relatively low abundance, suggesting that characterizations based on $E^{\\prime}$ centers do not adequately capture radiation-induced structural damage in quartz. Finally, we evaluate the dependenc...

Wang, Bu; Pignatelli, Isabella; Sant, Gaurav N; Bauchy, Mathieu

2015-01-01T23:59:59.000Z

337

Defects in Four-Dimensional Continua: A Paradigm for the Expansion of the Universe?  

E-Print Network [OSTI]

The presence of defects in material continua is known to produce internal permanent strained states. Extending the theory of defects to four dimensions and allowing for the appropriate signature, it is possible to apply these concepts to space-time. In this case a defect would induce a non-trivial metric tensor, which can be interpreted as a gravitational field. The image of a defect in space-time can be applied to the description of the Big Bang. A review of the four-dimensional generalisation of defects and an application to the expansion of the universe will be presented.

A. Tartaglia

2008-08-24T23:59:59.000Z

338

Improving Cooling performance of the mechanical resonator with the two-level-system defects  

E-Print Network [OSTI]

We study cooling performance of a realistic mechanical resonator containing defects. The normal cooling method through an optomechanical system does not work efficiently due to those defects. We show by employing periodical $\\sigma_z$ pulses, we can eliminate the interaction between defects and their surrounded heat baths up to the first order of time. Compared with the cooling performance of no $\\sigma_z$ pulses case, much better cooling results are obtained. Moreover, this pulse sequence has an ability to improve the cooling performance of the resonator with different defects energy gaps and different defects damping rates.

Tian Chen; Xiang-Bin Wang

2014-06-03T23:59:59.000Z

339

Architectures built using bottom-up self-assembly of nanoelectronic devices will need to tolerate defect rates that  

E-Print Network [OSTI]

in the lithography process, the high energy associated with shorter wavelengths and the accuracy needed to fabricate1 Abstract Architectures built using bottom-up self-assembly of nanoelectronic devices will need isolation. Simulations show that, for a fail-stop model of node failure, the broadcast connects all nodes

Sorin, Daniel J.

340

Architectures built using bottom-up self-assembly of nanoelectronic devices will need to tolerate defect rates that  

E-Print Network [OSTI]

in the lithography process, the high energy associated with shorter wavelengths and the accuracy needed to fabricateAbstract Architectures built using bottom-up self-assembly of nanoelectronic devices will need isolation. Simulations show that, for a fail-stop model of node failure, the broadcast connects all nodes

Dwyer, Chris

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

10^{-7} contrast ratio at 4.5Lambda/D: New results obtained in laboratory experiments using nano-fabricated coronagraph and multi-Gaussian shaped pupil masks  

E-Print Network [OSTI]

We present here new experimental results on high contrast imaging of 10^{-7} at 4.5Lambda/D (Lambda = 0.820 microns) by combining a circular focal plane mask (coronagraph) of 2.5Lambda/D diameter and a multi-Gaussian pupil plane mask. Both the masks were fabricated on very high surface quality (Lambda/30) BK7 optical substrates using nano-fabrication techniques of photolithography and metal lift-off. This process ensured that the shaped masks have a useable edge roughness better than Lambda/4 (rms error better than 0.2 microns), a specification that is necessary to realize the predicted theoretical limits of any mask design. Though a theoretical model predicts a contrast level of 10^{-12}, the background noise of the observed images was speckle dominated which reduced the contrast level to 4x10^{-7} at 4.5Lambda/D. The optical setup was built on the University of Illinois Seeing Improvement System (UnISIS) optics table which is at the Coude focus of the 2.5-m telescope of the Mt. Wilson Observatory. We used a 0.820 micron laser source coupled with a 5 micron single-mode fiber to simulate an artificial star on the optical test bench of UnISIS.

Abhijit Chakraborty; Laird A. Thompson; Mike Rogosky

2005-04-05T23:59:59.000Z

342

Composition dependent intrinsic defect structures in SrTiO3  

SciTech Connect (OSTI)

Intrinsic point defect complexes in SrTiO3 under different chemical conditions are studied using density functional theory. The Schottky defect complex consisting of nominally charged Sr, Ti and O vacancies is predicted to be the most stable defect structure in stoichiometric SrTiO3, with a relatively low formation energy of 1.64 eV/defect. In addition, the mechanisms of defect complex formation in nonstoichiometric SrTiO3 are investigated. Excess SrO leads to the formation of the oxygen vacancies and a strontium-titanium antisite defect, while a strontium vacancy together with an oxygen vacancy and the titanium-strontium antisite defect are produced in an excess TiO2 environment. Since point defects, such as oxygen vacancies and cation antisite defects, are intimately related to the functionality of SrTiO3, these results provide guidelines for controlling the formation of intrinsic point defects and optimizing the functionality of SrTiO3 by controlling nonstoichiometric chemical compositions of SrO and TiO2 in experiments.

Liu, Bin [ORNL] [ORNL; Cooper, Valentino R [ORNL] [ORNL; Xu, Haixuan [University of Tennessee, Knoxville (UTK)] [University of Tennessee, Knoxville (UTK); Xiao, Haiyan [University of Tennessee, Knoxville (UTK)] [University of Tennessee, Knoxville (UTK); Zhang, Yanwen [ORNL] [ORNL; Weber, William J [ORNL] [ORNL

2014-01-01T23:59:59.000Z

343

Preshot Predictions for Defect Induced Mix (DIME) Capsules  

SciTech Connect (OSTI)

In this memo, we evaluate the most probable yield and other results for the Defect Induced Mix (DIME-12A) Polar Direct Drive (PDD) capsule-only shots. We evaluate the expected yield, bang time, burn averaged ion temperature, and the average electron temperature of the Ge line-emitting region. We also include synthetic images of the capsule backlit by Cu K-{alpha} emission (8.39 keV) and core self-emission synthetic images. This memo is a companion to the maximum credible yield memo (LA-UR-12-00287) published earlier.

Bradley, Paul A. [Los Alamos National Laboratory; Krasheninnikova, Natalia S. [Los Alamos National Laboratory; Tregillis, Ian L. [Los Alamos National Laboratory; Schmitt, Mark J. [Los Alamos National Laboratory

2012-07-31T23:59:59.000Z

344

Blade reliability collaborative : collection of defect, damage and repair data.  

SciTech Connect (OSTI)

The Blade Reliability Collaborative (BRC) was started by the Wind Energy Technologies Department of Sandia National Laboratories and DOE in 2010 with the goal of gaining insight into planned and unplanned O&M issues associated with wind turbine blades. A significant part of BRC is the Blade Defect, Damage and Repair Survey task, which will gather data from blade manufacturers, service companies, operators and prior studies to determine details about the largest sources of blade unreliability. This report summarizes the initial findings from this work.

Ashwill, Thomas D.; Ogilvie, Alistair B.; Paquette, Joshua A.

2013-04-01T23:59:59.000Z

345

Energetics of Defects on Graphene through Fluorination. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing Zirconia Nanoparticles asSecond stage ofDefects on Graphene through

346

Sandia National Laboratories: Research Challenge 4: Defect-Carrier  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -theErik SpoerkeSolar RegionalClimateResearchInteractions 4: Defect-Carrier

347

Defect Prevention and Detection in Software for Automated Test Equipment  

SciTech Connect (OSTI)

Software for automated test equipment can be tedious and monotonous making it just as error-prone as other software. Active defect prevention and detection are also important for test applications. Incomplete or unclear requirements, a cryptic syntax used for some test applications—especially script-based test sets, variability in syntax or structure, and changing requirements are among the problems encountered in one tester. Such problems are common to all software but can be particularly problematic in test equipment software intended to test another product. Each of these issues increases the probability of error injection during test application development. This report describes a test application development tool designed to address these issues and others for a particular piece of test equipment. By addressing these problems in the development environment, the tool has powerful built-in defect prevention and detection capabilities. Regular expressions are widely used in the development tool as a means of formally defining test equipment requirements for the test application and verifying conformance to those requirements. A novel means of using regular expressions to perform range checking was developed. A reduction in rework and increased productivity are the results. These capabilities are described along with lessons learned and their applicability to other test equipment software. The test application development tool, or “application builder”, is known as the PT3800 AM Creation, Revision and Archiving Tool (PACRAT).

E. Bean

2006-11-30T23:59:59.000Z

348

Multichannel Quantum Defect Theory of Strontium Rydberg Series  

E-Print Network [OSTI]

Using the reactance matrix approach, we systematically develop new multichannel quantum defect theory models for the singlet and triplet S, P, D and F states of strontium based on improved energy level measurements. The new models reveal additional insights into the character of doubly excited perturber states, and the improved energy level measurements for certain series allow fine structure to be resolved for those series' perturbers. Comparison between the predictions of the new models and those of previous empirical and \\emph{ab initio} studies reveals good agreement with most series, however some discrepancies are highlighted. Using the multichannel quantum defect theory wave functions derived from our models we calculate other observables such as Land\\'e $g_J$-factors and radiative lifetimes. The analysis reveals the impact of perturbers on the Rydberg state properties of divalent atoms, highlighting the importance of including two-electron effects in the calculations of these properties. The work enables future investigations of properties such as Stark maps and long-range interactions of Rydberg states of strontium.

C L Vaillant; M P A Jones; R M Potvliege

2014-02-24T23:59:59.000Z

349

Simulation and analysis on ultrasonic testing for the cement grouting defects of the corrugated pipe  

SciTech Connect (OSTI)

The defects exist in the cement grouting process of prestressed corrugated pipe may directly impair the bridge safety. In this paper, sound fields propagation in concrete structures with corrugated pipes and the influence of various different defects are simulated and analyzed using finite element method. The simulation results demonstrate a much complex propagation characteristic due to multiple reflection, refraction and scattering, where the scattering signals caused by metal are very strong, while the signals scattered by an air bubble are weaker. The influence of defect both in time and frequency domain are found through deconvolution treatment. In the time domain, the deconvolution signals correspond to larger defect display a larger head wave amplitude and shorter arrive time than those of smaller defects; in the frequency domain, larger defect also shows a stronger amplitude, lower center frequency and lower cutoff frequency.

Qingbang, Han; Ling, Chen; Changping, Zhu [Changzhou Key Laboratory of Sensor Networks and Environmental Sensing, College of IOT, Hohai University Changzhou, Jiangsu, 213022 (China)

2014-02-18T23:59:59.000Z

350

Defective graphene as promising anode material for Na-ion battery and Ca-ion battery  

E-Print Network [OSTI]

We have investigated adsorption of Na and Ca on graphene with divacancy (DV) and Stone-Wales (SW) defect. Our results show that adsorption is not possible on pristine graphene. However, their adsorption on defective sheet is energetically favorable. The enhanced adsorption can be attributed to the increased charge transfer between adatoms and underlying defective sheet. With the increase in defect density until certain possible limit, maximum percentage of adsorption also increases giving higher battery capacity. For maximum possible DV defect, we can achieve maximum capacity of 1459 mAh/g for Na-ion batteries (NIBs) and 2900 mAh/g for Ca-ion batteries (CIBs). For graphene full of SW defect, we find the maximum capacity of NIBs and CIBs is around 1071 mAh/g and 2142 mAh/g respectively. Our results will help create better anode materials with much higher capacity and better cycling performance for NIBs and CIBs.

Datta, Dibakar; Shenoy, Vivek B

2013-01-01T23:59:59.000Z

351

Multiple stalk formation as a pathway of defect-induced membrane fusion  

E-Print Network [OSTI]

We propose that the first stage of membrane fusion need not be the formation of a single stalk. Instead, we consider a scenario for defect-induced membrane fusion that proceeds cooperatively via multiple stalk formation. The defects (stalks or pores) attract each other via membrane-mediated capillary interactions that result in a condensation transition of the defects. The resulting dense phase of stalks corresponds to the so-called fusion intermediate.

D. B. Lukatsky; Daan Frenkel

2004-03-29T23:59:59.000Z

352

First principles predictions of intrinsic defects in aluminum arsenide, AlAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in aluminum arsenide, AlAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz, 'First principles predictions of intrinsic defects in Aluminum Arsenide, AlAs', Materials Research Society Symposia Proceedings 1370 (2011; SAND2011-2436C), and intended for use as reference tables for a defect physics package in device models.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

353

Proceedings of NAMRI/SME, Vol. 41, 2013 Removal Mechanism and Defect Characterization for Glass-  

E-Print Network [OSTI]

Proceedings of NAMRI/SME, Vol. 41, 2013 Removal Mechanism and Defect Characterization for Glass of NAMRI/SME, Vol. 41, 2013 f

Yao, Y. Lawrence

354

E-Print Network 3.0 - acetabular bone defect Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Journal of Arthroplasty Vol. 14 No. 7 1999 Case Report Summary: modular head and polyethylene liner. Bone defects were filled with morcellized allograft. Three months......

355

Interstitial defects in silicon from 1{endash}5 keV Si{sup +} ion implantation  

SciTech Connect (OSTI)

Extended defects from 5-, 2-, and 1-keV Si{sup +} ion implantation are investigated by transmission electron microscopy using implantation doses of 1 and 3{times}10{sup 14}cm{sup {minus}2} and annealing temperatures from 750 to 900{degree}C. Despite the proximity of the surface, {l_brace}311{r_brace}-type defects are observed even for 1 keV. Samples with a peak concentration of excess interstitials exceeding {approximately}1{percent} of the atomic density also contain some {l_brace}311{r_brace} defects which are corrugated across their width. These so-called zig-zag {l_brace}311{r_brace} defects are more stable than the ordinary {l_brace}311{r_brace} defects, having a dissolution rate at 750{degree}C which is ten times smaller. Due to their enhanced stability, the zig-zag {l_brace}311{r_brace} defects grow to lengths that are many times longer than their distance from the surface. It is proposed that zig-zag {l_brace}311{r_brace} defects form during the early stages of annealing by coalescence the high volume density of {l_brace}311{r_brace} defects confined within a very narrow implanted layer. These findings indicate that defect formation and dissolution will continue to control the interstitial supersaturation from ion implantation down to very low energies. {copyright} {ital 1997 American Institute of Physics.}

Agarwal, A.; Haynes, T.E. [Oak Ridge National Laboratory, MS-6048, Oak Ridge, Tennessee 37831 (United States)] [Oak Ridge National Laboratory, MS-6048, Oak Ridge, Tennessee 37831 (United States); Eaglesham, D.J.; Gossmann, H.; Jacobson, D.C.; Poate, J.M. [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)] [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States); Erokhin, Y.E. [Eaton Corporation, 108 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States)] [Eaton Corporation, 108 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States)

1997-06-01T23:59:59.000Z

356

E-Print Network 3.0 - automated defect classification Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Search Sample search results for: automated defect classification Page: << < 1 2 3 4 5 > >> 1 ADC customization software module, Applied Materials, Summary: Classification...

357

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC  

SciTech Connect (OSTI)

Dicarbon antisite defects were created by either electron irradiation or ion implantation into 4H-SiC. The no-phonon lines from the dicarbon antisite defect center were observed with their phonon replicas. The stretch frequencies of the defect were observed up to the fifth harmonic. The Morse potential model accounts for the anharmonicity quite well and gives a very good prediction of the vibration energies up to the fifth harmonic with an error of less than 1%. First principles calculations show that the model of a dicarbon antisite defect along with its four nearest neighboring carbon atoms can explain the observed anharmonicity.

Yan, F.; Devaty, R. P.; Choyke, W. J. [Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States); Gali, A. [Research Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Kimoto, T. [Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510 (Japan); Ohshima, T. [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Pensl, G. [Lehrstuhl fuer Angewandte Physik, Universitaet Erlangen-Nuernberg, Staudstr. 7/A3 Erlangen (Germany)

2012-03-26T23:59:59.000Z

358

E-Print Network 3.0 - annealing radiation defects Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

band decreases... that the combination of laser annealing and passivation of oxygen vacancies by hydrogen results in films free of defect... method of nanocluster surface...

359

2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012  

SciTech Connect (OSTI)

The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

GLASER, EVAN

2012-08-17T23:59:59.000Z

360

Physical Modeling of Transient Enhanced Diusion and Dopant Deactivation via Extended Defect Evolution  

E-Print Network [OSTI]

Physical Modeling of Transient Enhanced Diusion and Dopant Deactivation via Extended Defect requires the use of well-founded physical models for these aggregation processes. We have developed

Dunham, Scott

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

E-Print Network 3.0 - agglomerates behavioral defects Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

exceed the tensile strength of concrete these micro- cracksmicro-defects evolve. The control of concrete Source: Southwest Region University Transportation Center Collection:...

362

E-Print Network 3.0 - apoptosis-associated reproductive defects...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Reproduction and Development March 5, 2009 Summary: -98-1 Birth defects, Spontaneous abortion Known reproductive hazard for males and females. Butyl Benzyl... showed...

363

Periodic Schrödinger operators with local defects and spectral pollution  

E-Print Network [OSTI]

This article deals with the numerical calculation of eigenvalues of perturbed periodic Schr\\"odinger operators located in spectral gaps. Such operators are encountered in the modeling of the electronic structure of crystals with local defects, and of photonic crystals. The usual finite element Galerkin approximation is known to give rise to spectral pollution. In this article, we give a precise description of the corresponding spurious states. We then prove that the supercell model does not produce spectral pollution. Lastly, we extend results by Lewin and S\\'er\\'e on some no-pollution criteria. In particular, we prove that using approximate spectral projectors enables one to eliminate spectral pollution in a given spectral gap of the reference periodic Sch\\"odinger operator.

Eric Cancès; Virginie Ehrlacher; Yvon Maday

2011-11-16T23:59:59.000Z

364

Directed polymers in a random environment with a defect line  

E-Print Network [OSTI]

We study the depinning transition of the $1+1$ dimensional directed polymer in a random environment with a defect line. The random environment consists of i.i.d. potential values assigned to each site of $\\mathbb{Z}^2$; sites on the positive axis have the potential enhanced by a deterministic value $u$. We show that for small inverse temperature $\\beta$ the quenched and annealed free energies differ significantly at most in a small neighborhood (of size of order $\\beta$) of the annealed critical point $u_c^a=0$. For the case $u=0$, we show that the difference between quenched and annealed free energies is of order $\\beta^4$ as $\\beta\\to 0$, assuming only finiteness of exponential moments of the potential values, improving existing results which required stronger assumptions.

Kenneth S. Alexander; Gökhan Y?ld?r?m

2015-01-21T23:59:59.000Z

365

Defect localization, characterization and reliability assessment in emerging photovoltaic devices.  

SciTech Connect (OSTI)

Microsystems-enabled photovoltaics (MEPV) can potentially meet increasing demands for light-weight, portable, photovoltaic solutions with high power density and efficiency. The study in this report examines failure analysis techniques to perform defect localization and evaluate MEPV modules. CMOS failure analysis techniques, including electroluminescence, light-induced voltage alteration, thermally-induced voltage alteration, optical beam induced current, and Seabeck effect imaging were successfully adapted to characterize MEPV modules. The relative advantages of each approach are reported. In addition, the effects of exposure to reverse bias and light stress are explored. MEPV was found to have good resistance to both kinds of stressors. The results form a basis for further development of failure analysis techniques for MEPVs of different materials systems or multijunction MEPVs. The incorporation of additional stress factors could be used to develop a reliability model to generate lifetime predictions for MEPVs as well as uncover opportunities for future design improvements.

Yang, Benjamin Bing-Yeh; Cruz-Campa, Jose Luis; Haase, Gad S.; Tangyunyong, Paiboon; Cole, Edward Isaac,; Okandan, Murat; Nielson, Gregory N.

2014-04-01T23:59:59.000Z

366

Defects and diffusion in MeV implanted silicon  

SciTech Connect (OSTI)

In this work we demonstrate that the defects that are created by 2-MeV Si ions can interact with dopant atoms both during implantation and during post-implant annealing. We show that the interstitials and vacancies created during MeV Si implantation result in a radiation enhanced diffusion of B and Sb markers, respectively, when the temperature of implantation is above the threshold temperature for formation of mobile dopant complexes. With the use of these dopant markers we also demonstrate that a vacancy-rich near surface region results during post-implant annealing of MeV implanted silicon. The depth distribution and the thermal evolution of clustered vacancies was measured by a Au labeling technique.

Venezia, V. C.; Haynes, T. E.; Agarwal, Aditya; Gossmann, H.-J.; Pelaz, L.; Jacobson, D. C.; Eaglesham, D. J.; Duggan, J. L. [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States); Solid State Division, Oak Ridge National Laboratory, MS-6048, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States); Semiconductor Equipment Operations, Eaton Corporation, 55 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States); Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States); Department of Physics, University of North Texas, Denton, Texas 76201 (United States)

1999-06-10T23:59:59.000Z

367

Electrodes mitigating effects of defects in organic electronic devices  

DOE Patents [OSTI]

A compound electrode for organic electronic devices comprises a thin first layer of a first electrically conducting material and a second electrically conducting material disposed on the first layer. In one embodiment, the second electrically conducting material is formed into a plurality of elongated members. In another embodiment, the second material is formed into a second layer. The elongated members or the second layer has a thickness greater than that of the first layer. The second layer is separated from the first layer by a conducting material having conductivity less than at least the material of the first layer. The compound electrode is capable of mitigating adverse effects of defects, such as short circuits, in the construction of the organic electronic devices, and can be included in light-emitting or photovoltaic devices.

Heller, Christian Maria Anton (Albany, NY)

2008-05-06T23:59:59.000Z

368

Ion beam collimating grid to reduce added defects  

DOE Patents [OSTI]

A collimating grid for an ion source located after the exit grid. The collimating grid collimates the ion beamlets and disallows beam spread and limits the beam divergence during transients and steady state operation. The additional exit or collimating grid prevents beam divergence during turn-on and turn-off and prevents ions from hitting the periphery of the target where there is re-deposited material or from missing the target and hitting the wall of the vessel where there is deposited material, thereby preventing defects from being deposited on a substrate to be coated. Thus, the addition of a collimating grid to an ion source ensures that the ion beam will hit and be confined to a specific target area.

Lindquist, Walter B. (Oakland, CA); Kearney, Patrick A. (Livermore, CA)

2003-01-01T23:59:59.000Z

369

Yield improvement and defect reduction in steel casting  

SciTech Connect (OSTI)

This research project investigated yield improvement and defect reduction techniques in steel casting. Research and technology development was performed in the following three specific areas: (1) Feeding rules for high alloy steel castings; (2) Unconventional yield improvement and defect reduction techniques--(a) Riser pressurization; and (b) Filling with a tilting mold; and (3) Modeling of reoxidation inclusions during filling of steel castings. During the preparation of the proposal for this project, these areas were identified by the High Alloy Committee and Carbon and Low Alloy Committee of the Steel Founders' Society of America (SFSA) as having the highest research priority to the steel foundry industry. The research in each of the areas involved a combination of foundry experiments, modeling and simulation. Numerous SFSA member steel foundries participated in the project through casting trials and meetings. The technology resulting from this project will result in decreased scrap and rework, casting yield improvement, and higher quality steel castings produced with less iteration. This will result in considerable business benefits to steel foundries, primarily due to reduced energy and labor costs, increased capacity and productivity, reduced lead-time, and wider use and application of steel castings. As estimated using energy data provided by the DOE, the technology produced as a result of this project will result in an energy savings of 2.6 x 10{sup 12} BTU/year. This excludes the savings that were anticipated from the mold tilting research. In addition to the energy savings, and corresponding financial savings this implies, there are substantial environmental benefits as well. The results from each of the research areas listed above are summarized.

Kent Carlson

2004-03-16T23:59:59.000Z

370

Intracardiac Echocardiography Evaluation in Secundum Atrial Septal Defect Transcatheter Closure  

SciTech Connect (OSTI)

Purpose: This study was designed to assess the balloon sizing maneuvers and deployment of an Amplatzer Septal Occluder (ASO). In addition, intraprocedural balloon sizing was compared with off-line intracardiac echocardiographic measurements. Methods: The intracardiac echocardiography (ICE) measurements were: maximum transverse and longitudinal atrial septal defect (ASD) diameters in the aortic valve and four-chamber planes;area of the ASD and its equivalent circle diameter. Thirteen consecutive patients underwent transcatheter implantation of an ASO device using ICE guidance under local anesthesia. The device matching the balloon sizing diameter of the defect was implanted. Qualitative ICE assessment of the ASO devices implanted was performed off line. Results: The mean equivalent circle diameter predicted by ICE was 24.40 {+-} 5.61 mm and was significantly higher(p 0.027) than the ASD measured by balloonsizing (21.38 {+-} 5.28 mm). Unlike previous studies we did not find any correlation between the two measurements (correlation coefficient = 0.47). Only four of the 13 patients had optimal device positioning as shown by the qualitative ICE evaluation, whereas the remaining nine patients had inadequate device placement. This resulted in a waist diameter that was an average 26.1% undersized in seven patients and 12.7% oversized in two patients. Five of the seven patients with an undersized device had ASO-atrial septum misalignment with leftward device deviation. Conclusion: The ICE images allowed careful measurement of the dimensions of the ASD and accurately displayed the spatial relations of the ASO astride the ASD.Moreover, use of the ICE measurement led to selection of a different size of device in comparison with those of balloon sizing. The clinical benefit of this new approach needs to be rigorously tested.

Zanchetta, Mario; Pedon, Luigi; Rigatelli, Gianluca; Carrozza, Antonio; Zennaro, Marco; Di Martino, Roberta [Department of Cardiovascular Disease, Cittadella General Hospital, Cittadella, Padua (Italy); Onorato, Eustaquio [Operative Unit ofCardiology, Clinica S. Rocco, Ome, Brescia (Italy); Maiolino, Pietro [Department of Cardiovascular Disease, Cittadella General Hospital, Cittadella, Padua (Italy)

2003-02-15T23:59:59.000Z

371

Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks  

E-Print Network [OSTI]

that of hydro- genated amorphous silicon,6 and their low processing tem- perature makes them more attractive be precisely controlled and defect-free dielectric films can be grown with optimized processing conditions of device parameters, such as drain current, gate delay, and power dissipation, and FET performance

Dokmeci, Mehmet

372

Solvent Immersion Imprint Lithography. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administrationcontroller systemsBiSite CulturalDepartment2)isomerase from GiardiaA CombinedSolvent

373

Masked-backlighter technique used to simultaneously image x-ray absorption and x-ray emission from an inertial confinement fusion plasma  

SciTech Connect (OSTI)

A method to simultaneously image both the absorption and the self-emission of an imploding inertial confinement fusion plasma has been demonstrated on the OMEGA Laser System. The technique involves the use of a high-Z backlighter, half of which is covered with a low-Z material, and a high-speed x-ray framing camera aligned to capture images backlit by this masked backlighter. Two strips of the four-strip framing camera record images backlit by the high-Z portion of the backlighter, while the other two strips record images aligned with the low-Z portion of the backlighter. The emission from the low-Z material is effectively eliminated by a high-Z filter positioned in front of the framing camera, limiting the detected backlighter emission to that of the principal emission line of the high-Z material. As a result, half of the images are of self-emission from the plasma and the other half are of self-emission plus the backlighter. The advantage of this technique is that the self-emission simultaneous with backlighter absorption is independently measured from a nearby direction. The absorption occurs only in the high-Z backlit frames and is either spatially separated from the emission or the self-emission is suppressed by filtering, or by using a backlighter much brighter than the self-emission, or by subtraction. The masked-backlighter technique has been used on the OMEGA Laser System to simultaneously measure the emission profiles and the absorption profiles of polar-driven implosions.

Marshall, F. J., E-mail: fredm@lle.rochester.edu; Radha, P. B. [Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623 (United States)

2014-11-15T23:59:59.000Z

374

Heart Defects in Gulf Tuna Seen Tied to 2010 BP Oil Spill  

E-Print Network [OSTI]

Heart Defects in Gulf Tuna Seen Tied to 2010 BP Oil Spill By Jim Efstathiou Jr. Mar 25, 2014 12 of Mexico spill may have led to heart defects and premature death for tuna, researchers backed hearts may reduce swimming performance, jeopardizing a fish's survival. "The timing and location

Grosell, Martin

375

Impurity-defect interaction in polycrystalline silicon for photovoltaic applications. The role of hydrogen  

E-Print Network [OSTI]

655 Impurity-defect interaction in polycrystalline silicon for photovoltaic applications. The role of hydrogen A. Chari, P. de Mierry, A. Menikh and M. Aucouturier Laboratoire de Physique des Solides, C silicon, passivation of recombining defects by hydrogen, hydrogen-dopant interaction. A more focused

Paris-Sud XI, Université de

376

Electrochemical method for defect delineation in silicon-on-insulator wafers  

DOE Patents [OSTI]

An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

Guilinger, Terry R. (Albuquerque, NM); Jones, Howland D. T. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Medernach, John W. (Albuquerque, NM); Stevenson, Joel O. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

377

Shape defect detection in ferrite cores Judit Verest'oy and Dmitry Chetverikov  

E-Print Network [OSTI]

Shape defect detection in ferrite cores Judit Verest'oy and Dmitry Chetverikov Computer. The method is applied to the visual inspection and dimensional measurement of ferrite cores. An optical shape defects may deteriorate any of the dimensions. Key words: image analysis, industrial inspection, ferrite

Chetverikov, Dmitry

378

Detecting shape defects in ferrite cores \\Lambda Dmitry Chetverikov and Judit Verest'oy  

E-Print Network [OSTI]

Detecting shape defects in ferrite cores \\Lambda Dmitry Chetverikov and Judit Verest'oy Computer of the objects. The method is applied to the visual inspection and dimensional measurement of ferrite cores CIPA­CT94 0153 CRASH (for CRAck and SHape defect detection in ferrite cores) which has been in progress

Chetverikov, Dmitry

379

DuoTracker: Tool Support for Software Defect Data Collection and Analysis  

E-Print Network [OSTI]

evaluate their process using either the Capability Maturity Model (CMM) [3] or the ISO 9001 standards [4 software processes. Keywords--software defects; software anomalies; defect classification; PSP; CMM; IS0-9001 is then compared against the quality models of CMM or IS0 9001. There are also improvement methods such as IDEAL [5

Dascalu, Sergiu

380

IDENTIFICATION OF IMPACTING FACTORS OF SURFACE DEFECTS IN HOT ROLLING PROCESSES USING MULTI-LEVEL REGRESSION  

E-Print Network [OSTI]

IDENTIFICATION OF IMPACTING FACTORS OF SURFACE DEFECTS IN HOT ROLLING PROCESSES USING MULTI. The result obtained can provide guidelines for root cause identification and quality improvement of hot products. Surface defects remain as a weakness or stress concentration site of the bulk material and hence

Zhou, Shiyu

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Topological description of the Stone-Wales defect formation energy in carbon nanotubes and graphene  

E-Print Network [OSTI]

Topological description of the Stone-Wales defect formation energy in carbon nanotubes and graphene,10,12,16,18,26 The reported values for SW defect formation energies both in carbon nanotubes and graphene8 energies depend largely on the nanotube radius, the orientation of the dislocation dipole, and, to a lesser

Daw, Murray S.

382

Ian Sommerville 2000 Software Engineering, 6th edition. Chapter 20 Slide 1 Defect testing  

E-Print Network [OSTI]

©Ian Sommerville 2000 Software Engineering, 6th edition. Chapter 20 Slide 1 Defect testing l Testing programs to establish the presence of system defects #12;©Ian Sommerville 2000 Software Engineering, 6th edition. Chapter 20 Slide 2 Objectives l To understand testing techniques that are geared

Scharff, Christelle

383

Stone-Wales defects in graphene and other planar sp2 -bonded materials  

E-Print Network [OSTI]

Stone-Wales defects in graphene and other planar sp2 -bonded materials Jie Ma,1,2,3 Dario Alfè,2 that the structure of the Stone-Wales SW defect in graphene is more complex than hitherto appreciated. Rather than of graphene and in so doing modify its chemical re- activity toward adsorbates, and likely impact upon its

Alfè, Dario

384

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Kelsey A. Whitesell*a  

E-Print Network [OSTI]

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Crystals Kelsey A. Whitesell to enhance performance of thin film solar cells because of their unique ability to control light. We show for light trapping in thin film photovoltaics. Keywords: photonic crystals, defect, silicon, solar cell

Atwater, Harry

385

Dark defects in InGaAsP/InP double heterostructure lasers under accelerated aging  

SciTech Connect (OSTI)

Degradation modes due to dark defects under accelerated aging for InGaAsP/InP double heterostructure lasers are investigated by monitoring pulse threshold current, leak current, absorption coefficient, gain factor, and electroluminescence topograph. Most of the dark defects are dark spot defects (DSD's) and there are only few <100> dark line defects. At the initial stage of the degradation, these dark defects scarcely absorb the emitted light, and the reduction of gain factor causes the increase of pulse threshold current. After this stage, dark defects begin to act as absorber of the emitted light. The generation time of such DSD's strongly depends on the injected current density but only weakly on the junction temperature in the range of 25/sup 0/ to 250/sup 0/C. The activation energies for the generation time of the first dark spot defect and the growing speed of <100> dark line defects are estimated to be 0.16 and 0.2 eV, respectively.

Fukuda, M.; Wakita, K.; Iwane, G.

1983-03-01T23:59:59.000Z

386

76 PostErs EMBnet.journal 19.B An ontology describing congenital heart defects data  

E-Print Network [OSTI]

76 PostErs EMBnet.journal 19.B An ontology describing congenital heart defects data Charalampos interests: the authors have declared that no competing interests exist. Abstract Congenital heart defects (CHDs) are a group of diseases characterized by a structural anomaly of the heart that is pre- sent

387

Towards Fault-Tolerant Digital Microfluidic Lab-on-Chip: Defects, Fault Modeling, Testing, and Reconfiguration  

E-Print Network [OSTI]

Towards Fault-Tolerant Digital Microfluidic Lab-on-Chip: Defects, Fault Modeling, Testing, NC 27708, USA Abstract Dependability is an important attribute for microfluidic lab-on-chip devices microfluidic lab-on-chip systems. Defects are related to logical fault models that can be viewed not only

Chakrabarty, Krishnendu

388

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory  

SciTech Connect (OSTI)

We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels, and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement.

Szállás, A., E-mail: szallas.attila@wigner.mta.hu [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Szász, K. [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Institute of Physics, Eötvös University, Pázmány Péter sétány 1/A, H-1117 Budapest (Hungary); Trinh, X. T.; Son, N. T.; Janzén, E. [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Gali, A., E-mail: gali.adam@wigner.mta.hu [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest (Hungary)

2014-09-21T23:59:59.000Z

389

Electrical characterisation of defects in polycrystalline B-doped diamond films  

E-Print Network [OSTI]

applied to B-doped thin polycrystalline diamond films deposited on p+ -silicon by hot filament chemical]. Recently valuable information about defects in monocrystalline [3] and polycrystalline [7] diamond filmsElectrical characterisation of defects in polycrystalline B-doped diamond films O. S. Elsherif 1, a

Bristol, University of

390

Unifying power-law behaviour, functionality and defect distribution in general software  

E-Print Network [OSTI]

Unifying power-law behaviour, functionality and defect distribution in general software systems Les between power-law distribution of component sizes and defect growth in maturing software systems. It was further noted that power-law distributions appear to be present in software systems from the beginning

Hatton, Les

391

Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams  

SciTech Connect (OSTI)

Vacancy-type defects introduced by the grinding of Czochralski-grown Si wafers were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons showed that vacancy-type defects were introduced in the surface region (<98?nm), and the major defect species were identified as (i) relatively small vacancies incorporated in dislocations and (ii) large vacancy clusters. Annealing experiments showed that the defect concentration decreased with increasing annealing temperature in the range between 100 and 500?°C. After 600–700?°C annealing, the defect-rich region expanded up to about 170?nm, which was attributed to rearrangements of dislocation networks, and a resultant emission of point defects toward the inside of the sample. Above 800?°C, the stability limit of those vacancies was reached and they started to disappear. After the vacancies were annealed out (900?°C), oxygen-related defects were the major point defects and they were located at <25?nm.

Uedono, Akira; Yoshihara, Nakaaki [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Mizushima, Yoriko [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Kim, Youngsuk [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Disco Corporation, Ota, Tokyo 143-8580 (Japan); Nakamura, Tomoji [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Ohba, Takayuki [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Oshima, Nagayasu; Suzuki, Ryoichi [Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

2014-10-07T23:59:59.000Z

392

Hydrogen interaction with point defects in tungsten K. Heinola, T. Ahlgren, K. Nordlund, and J. Keinonen  

E-Print Network [OSTI]

Hydrogen interaction with point defects in tungsten K. Heinola, T. Ahlgren, K. Nordlund, and J-principles calculations were used in determining the binding and trapping properties of hydrogen to point defects in tungsten. Hydrogen zero-point vibrations were taken into account. It was concluded that the monovacancy can

Nordlund, Kai

393

Computer code for the atomistic simulation of lattice defects and dynamics. [COMENT code  

SciTech Connect (OSTI)

This document has been prepared to satisfy the need for a detailed, up-to-date description of a computer code that can be used to simulate phenomena on an atomistic level. COMENT was written in FORTRAN IV and COMPASS (CDC assembly language) to solve the classical equations of motion for a large number of atoms interacting according to a given force law, and to perform the desired ancillary analysis of the resulting data. COMENT is a dual-purpose intended to describe static defect configurations as well as the detailed motion of atoms in a crystal lattice. It can be used to simulate the effect of temperature, impurities, and pre-existing defects on radiation-induced defect production mechanisms, defect migration, and defect stability.

Schiffgens, J.O.; Graves, N.J.; Oster, C.A.

1980-04-01T23:59:59.000Z

394

Process for rapid detection of fratricidal defects on optics using Linescan Phase Differential Imaging  

SciTech Connect (OSTI)

Phase-defects on optics used in high-power lasers can cause light intensification leading to laser-induced damage of downstream optics. We introduce Linescan Phase Differential Imaging (LPDI), a large-area dark-field imaging technique able to identify phase-defects in the bulk or surface of large-aperture optics with a 67 second scan-time. Potential phase-defects in the LPDI images are indentified by an image analysis code and measured with a Phase Shifting Diffraction Interferometer (PSDI). The PSDI data is used to calculate the defects potential for downstream damage using an empirical laser-damage model that incorporates a laser propagation code. A ray tracing model of LPDI was developed to enhance our understanding of its phase-defect detection mechanism and reveal limitations.

Ravizza, F L; Nostrand, M C; Kegelmeyer, L M; Hawley, R A; Johnson, M A

2009-11-05T23:59:59.000Z

395

Delocalised oxygen as the origin of two-level defects in Josephson junctions  

E-Print Network [OSTI]

One of the key problems facing superconducting qubits and other Josephson junction devices is the decohering effects of bi-stable material defects. Although a variety of phenomenological models exist, the true microscopic origin of these defects remains elusive. For the first time we show that these defects may arise from delocalisation of the atomic position of the oxygen in the oxide forming the Josephson junction barrier. Using a microscopic model, we compute experimentally observable parameters for phase qubits. Such defects are charge neutral but have non-zero response to both applied electric field and strain. This may explain the observed long coherence time of two-level defects in the presence of charge noise, while still coupling to the junction electric field and substrate phonons.

Timothy C. DuBois; Manolo C. Per; Salvy P. Russo; Jared H. Cole

2012-06-12T23:59:59.000Z

396

Exploring the interaction between lithium ion and defective graphene surface using dispersion corrected DFT studies  

SciTech Connect (OSTI)

To analyze the lithium ion interaction with realistic graphene surfaces, we carried out dispersion corrected DFT-D3 studies on graphene with common point defects and chemisorbed oxygen containing functional groups along with defect free graphene surface. Our study reveals that, the interaction between lithium ion (Li+) and graphene is mainly through the delocalized ? electron of pure graphene layer. However, the oxygen containing functional groups pose high adsorption energy for lithium ion due to the Li-O ionic bond formation. Similarly, the point defect groups interact with lithium ion through possible carbon dangling bonds and/or cation-? type interactions. Overall these defect sites render a preferential site for lithium ions compared with pure graphene layer. Based on these findings, the role of graphene surface defects in lithium battery performance were discussed.

Vijayakumar, M.; Hu, Jian Z.

2013-10-15T23:59:59.000Z

397

Current rectification, switching, polarons, and defects in molecular electronic devices  

E-Print Network [OSTI]

Devices for nano- and molecular size electronics are currently a focus of research aimed at an efficient current rectification and switching. A few generic molecular scale devices are reviewed here on the basis of first-principles and model approaches. Current rectification by (ballistic) molecular quantum dots can produce the rectification ratio ~100. Current switching due to conformational changes in the molecules is slow, on the order of a few kHz. Fast switching (~1THz) may be achieved, at least in principle, in a degenerate molecular quantum dot with strong coupling of electrons with vibrational excitations. We show that the mean-field approach fails to properly describe intrinsic molecular switching and present an exact solution to the problem. Defects in molecular films result in spurious peaks in conductance, apparent negative differential resistance, and may also lead to unusual temperature and bias dependence of current. The observed switching in many cases is_extrinsic_, caused by changes in molecule-electrode geometry, molecule reconfiguration, metallic filament formation through, and/or changing amount of disorder in a molecular film. We give experimental examples of telegraph "switching" and "hot spot" formation in the molecular films.

A. M. Bratkovsky

2006-11-06T23:59:59.000Z

398

Higgsless superconductivity from topological defects in compact BF terms  

E-Print Network [OSTI]

We present a new Higgsless model of superconductivity, inspired from anyon superconductivity but P- and T-invariant and generalizable to any dimension. While the original anyon superconductivity mechanism was based on incompressible quantum Hall fluids as average field states, our mechanism involves topological insulators as average field states. In D space dimensions it involves a (D-1)-form fictitious pseudovector gauge field which originates from the condensation of topological defects in compact low-energy effective BF theories. In the average field approximation, the corresponding uniform emergent charge creates a gap for the (D-2)-dimensional branes via the Magnus force, the dual of the Lorentz force. One particular combination of intrinsic and emergent charge fluctuations that leaves the total charge distribution invariant constitutes an isolated gapless mode leading to superfluidity. The remaining massive modes organise themselves into a D-dimensional charged, massive vector. There is no massive Higgs scalar as there is no local order parameter. When electromagnetism is switched on, the photon acquires mass by the topological BF mechanism. Although the charge of the gapless mode (2) and the topological order (4) are the same as those of the standard Higgs model, the two models of superconductivity are clearly different since the origins of the gap, reflected in the high-energy sectors are totally different. In 2D this type of superconductivity is explicitly realized as global superconductivity in Josephson junction arrays. In 3D this model predicts a possible phase transition from topological insulators to Higgsless superconductors.

M. Cristina Diamantini; Carlo A. Trugenberger

2014-08-29T23:59:59.000Z

399

Control of Suspect/Counterfeit and Defective Items  

SciTech Connect (OSTI)

This procedure implements portions of the requirements of MSC-MP-599, Quality Assurance Program Description. It establishes the Mission Support Alliance (MSA) practices for minimizing the introduction of and identifying, documenting, dispositioning, reporting, controlling, and disposing of suspect/counterfeit and defective items (S/CIs). employees whose work scope relates to Safety Systems (i.e., Safety Class [SC] or Safety Significant [SS] items), non-safety systems and other applications (i.e., General Service [GS]) where engineering has determined that their use could result in a potential safety hazard. MSA implements an effective Quality Assurance (QA) Program providing a comprehensive network of controls and verification providing defense-in-depth by preventing the introduction of S/CIs through the design, procurement, construction, operation, maintenance, and modification of processes. This procedure focuses on those safety systems, and other systems, including critical load paths of lifting equipment, where the introduction of S/CIs would have the greatest potential for creating unsafe conditions.

Sheriff, Marnelle L.

2013-09-03T23:59:59.000Z

400

The Defect Induced Mix Experiment (DIME) for NIF  

SciTech Connect (OSTI)

LANL will perform two Defect Induced Mix Experiment (DIME) implosion campaigns on NIF in July and September, 2012. This presentation describes the goals for these shots and the experimental configuration and diagnostic set up to collect the appropriate data. The first two-shot campaign will focus on executing polar direct drive (PDD) implosions of plastic CH capsules filled with deuterium gas. Gas filling will be performed through a fill tube at target chamber center. A vanadium backligher foil will provide x-rays to radiograph the last half of the implosion to compare the implosion trajectory with modeling predictions. An equatorial groove in one of the capsules will be present to determine its effect on implosion dynamics. The second DIME campaign will commission and use a spectral imager (MMI) to examine the evolution of thin capsule layers doped with either Ge or Ga at 1.85%. Spectral line emission from these layers will quantify the mix width at the inner shell radius and near an equatorial groove feature.

Schmitt, Mark J [Los Alamos National Laboratory; Bradley, Paul A [Los Alamos National Laboratory; Cobble, James A [Los Alamos National Laboratory; Hakel, Peter [Los Alamos National Laboratory; Hsu, Scott C [Los Alamos National Laboratory; Krasheninnikova, Natalia S [Los Alamos National Laboratory; Kyrala, George A [Los Alamos National Laboratory; Murphy, Thomas J [Los Alamos National Laboratory; Obrey, Kimberly A [Los Alamos National Laboratory; Shah, Rahul C [Los Alamos National Laboratory; Tregillis, Ian L [Los Alamos National Laboratory

2012-06-18T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Hydrogen decoration of radiation damage induced defect structures  

SciTech Connect (OSTI)

The defect complexes that are formed when protons with energies in the MeV-range were implanted into high-purity silicon were investigated. After implantation, the samples were annealed at 400 °C or 450 °C for times ranging between 15 minutes and 30 hours. The resistivity of the samples was then analyzed by Spreading Resistance Profiling (SRP). The resistivity shows minima where there is a high carrier concentration and it is possible to extract the carrier concentration from the resistivity data. Initially, there is a large peak in the carrier concentration at the implantation depth where most of the hydrogen is concentrated. For longer anneals, this peak widens as the hydrogen diffuses away from the implantation depth. Following the changes in resistivity as a function of annealing time allows us to characterize the diffusion of hydrogen through these samples. Differences in the diffusion were observed depending on whether the silicon was grown by the magnetic Czochralski (m:Cz) method or the Float zone (Fz) method.

Kirnstötter, S. [Institute of Solid State Physics, Graz University of Technology, 8010 Graz and Infineon Technologies Austria AG, 9500 Villach (Austria); Faccinelli, M.; Hadley, P. [Institute of Solid State Physics, Graz University of Technology, 8010 (Austria); Schustereder, W. [Infineon Technologies Austria AG, 9500 Villach (Austria); Laven, J. G.; Schulze, H.-J. [Infineon Technologies AG, 81726 Munich (Germany)

2014-02-21T23:59:59.000Z

402

Effect of implanted species on thermal evolution of ion-induced defects in ZnO  

SciTech Connect (OSTI)

Implanted atoms can affect the evolution of ion-induced defects in radiation hard materials exhibiting a high dynamic annealing and these processes are poorly understood. Here, we study the thermal evolution of structural defects in wurtzite ZnO samples implanted at room temperature with a wide range of ion species (from {sup 11}B to {sup 209}Bi) to ion doses up to 2?×?10{sup 16}?cm{sup ?2}. The structural disorder was characterized by a combination of Rutherford backscattering spectrometry, nuclear reaction analysis, and transmission electron microscopy, while secondary ion mass spectrometry was used to monitor the behavior of both the implanted elements and residual impurities, such as Li. The results show that the damage formation and its thermal evolution strongly depend on the ion species. In particular, for F implanted samples, a strong out-diffusion of the implanted ions results in an efficient crystal recovery already at 600?°C, while co-implantation with B (via BF{sub 2}) ions suppresses both the F out-diffusion and the lattice recovery at such low temperatures. The damage produced by heavy ions (such as Cd, Au, and Bi) exhibits a two-stage annealing behavior where efficient removal of point defects and small defect clusters occurs at temperatures ?500?°C, while the second stage is characterized by a gradual and partial annealing of extended defects. These defects can persist even after treatment at 900?°C. In contrast, the defects produced by light and medium mass ions (O, B, and Zn) exhibit a more gradual annealing with increasing temperature without distinct stages. In addition, effects of the implanted species may lead to a nontrivial defect evolution during the annealing, with N, Ag, and Er as prime examples. In general, the obtained results are interpreted in terms of formation of different dopant-defect complexes and their thermal stability.

Azarov, A. Yu.; Rauwel, P.; Kuznetsov, A. Yu.; Svensson, B. G. [Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, PO Box 1048 Blindern, N-0316 Oslo (Norway); Hallén, A. [Royal Institute of Technology, KTH-ICT, Electrum 229, SE-164 40, Kista, Stockholm (Sweden); Du, X. L. [Institute of Physics, The Chinese Academy of Sciences, Beijing 100190 (China)

2014-02-21T23:59:59.000Z

403

Spin counting in electrically detected magnetic resonance via low-field defect state mixing  

SciTech Connect (OSTI)

The work herein describes a method that allows one to measure paramagnetic defect densities in semiconductor and insulator based devices with electrically detected magnetic resonance (EDMR). The method is based upon the mixing of defect states which results from the dipolar coupling of paramagnetic sites at low magnetic fields. We demonstrate the measurement method with spin dependent tunneling in thin film dielectrics; however, the method should be equally applicable to paramagnetic defect density measurements in semiconductors via the more commonly utilized EDMR technique called spin dependent recombination.

Cochrane, Corey J.; Lenahan, Patrick M. [The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-03-03T23:59:59.000Z

404

Scattering of linear and nonlinear waves in a waveguide array with a PT-symmetric defect  

SciTech Connect (OSTI)

We study the scattering of linear and nonlinear waves in a long waveguide array with a parity-time (PT)-symmetric defect created by two waveguides with balanced gain and loss. We present exact solutions for the scattering of linear waves on such a defect, and then demonstrate numerically that the linear theory can describe, with a good accuracy, the soliton scattering in the case of weak nonlinearity. We reveal that the reflected and transmitted linear and nonlinear waves can be amplified substantially after interaction with the PT-symmetric defect thus allowing an active control of the wave scattering in the array.

Dmitriev, Sergey V.; Suchkov, Sergey V. [Institute for Metals Superplasticity Problems, Russian Academy of Science, Ufa RU-450001 (Russian Federation); Sukhorukov, Andrey A.; Kivshar, Yuri S. [Nonlinear Physics Centre, Research School of Physics and Engineering,Australian National University, Canberra, ACT 0200 (Australia)

2011-07-15T23:59:59.000Z

405

Society Evaluation of point defect concentrations in B2-FeAl intermetallic compound  

E-Print Network [OSTI]

Thermal defects are studied for three compositions (49, 50 and 52 at.%Fe) of the intermetallic compound FeAl with B2 structure. Magnetic measurements are used to determine the thermal defect concentrations. These concentrations are determined from fitting the experimental curves of magnetic susceptibility, obtained during an isochronal annealing after a quench. Next we have evaluated theoretically the concentrations of different point defects that exist in this compound. The used model is based in the Bragg-Williams approximation assuming the nearest-neighbour interaction. The calculated concentrations describe well the experimental values. I.

S. Zaroual; O. Sassi; J. Aride; J. Bernardini; G. Moya; Supérieure Takaddoum; B. P. Rabat-morocco

2001-01-01T23:59:59.000Z

406

Defect motion and lattice pinning barriers in Josephson-junction ladders  

SciTech Connect (OSTI)

We study the motion of domain wall defects in a fully frustrated Josephson-junction ladder system, driven by small applied currents. For small system sizes, the energy barrier E{sub B} to the defect motion is computed analytically via symmetry and topological considerations. More generally, we perform numerical simulations directly on the equations of motion, based on the resistively-shunted junction model, to study the dynamics of defects, varying the system size. Coherent motion of domain walls is observed for large system sizes. In the thermodynamical limit, we find E{sub B}=0.1827 in units of the Josephson coupling energy.

Kang, H.; Lim, Jong Soo [Department of Physics and Center for Theoretical Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Fortin, J.-Y. [Laboratoire de Physique Theorique, Universite Louis Pasteur, 67084 Strasbourg (France); Choi, J. [Department of Physics, Keimyung University, Daegu 704-701 (Korea, Republic of); Choi, M. Y. [Department of Physics and Center for Theoretical Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Korea Institute for Advanced Study, Seoul 130-722 (Korea, Republic of)

2006-01-01T23:59:59.000Z

407

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample  

SciTech Connect (OSTI)

We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ?97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications.

Lesik, M.; Roch, J.-F. [Laboratoire Aimé Cotton, CNRS, Université Paris-Sud and Ecole Normale Supérieure de Cachan, 91405 Orsay (France); Tetienne, J.-P.; Jacques, V., E-mail: vjacques@ens-cachan.fr [Laboratoire Aimé Cotton, CNRS, Université Paris-Sud and Ecole Normale Supérieure de Cachan, 91405 Orsay (France); Laboratoire de Photonique Quantique et Moléculaire, Ecole Normale Supérieure de Cachan and CNRS UMR 8537, 94235 Cachan (France); Tallaire, A., E-mail: alexandre.tallaire@lspm.cnrs.fr; Achard, J.; Mille, V.; Gicquel, A. [Laboratoire des Sciences des Procédés et des Matériaux, CNRS and Université Paris 13, 93340 Villetaneuse (France)

2014-03-17T23:59:59.000Z

408

Structural defects in GaN revealed by Transmission Electron Microscopy  

SciTech Connect (OSTI)

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Liliental-Weber, Zuzanna

2014-04-18T23:59:59.000Z

409

Tuning the Optical Properties of Nanoscale Materials on Surfaces Through Controlled Exchange Reactions on Cadmium Selenide Quantum Dots and Patterning of Gold and QD Nanoparticle Arrays  

E-Print Network [OSTI]

combination between the use of a self-assembled monolayer (SAM) molecular linker and PS mask fabricated via polydimethylsiloxane (PDMS) micro-stamp was also discussed briefly. Particle lithography is a versatile method and can be used to fabricate pattern...

Pravitasari, Arika

2013-11-11T23:59:59.000Z

410

Electrode Placement and the Fabrication of Sub-100-nm Nanopore Arrays  

E-Print Network [OSTI]

The anodization of aluminum films grown on silicon substrates under controlled conditions is used to fabricate porous alumina arrays. Such porous arrays are used as sensors or lithography masks for fabrication of sub-100-nm nanodot arrays...

Gonzales, Jacob D.

2010-07-14T23:59:59.000Z

411

Ordered and self-disordered dynamics of holes and defects in the one-dimensional complex Ginzburg-Landau equation  

E-Print Network [OSTI]

We study the dynamics of holes and defects in the 1D complex Ginzburg--Landau equation in ordered and chaotic cases. Ordered hole--defect dynamics occurs when an unstable hole invades a plane wave state and periodically nucleates defects from which new holes are born. The results of a detailed numerical study of these periodic states are incorporated into a simple analytic description of isolated "edge" holes. Extending this description, we obtain a minimal model for general hole--defect dynamics. We show that interactions between the holes and a self--disordered background are essential for the occurrence of spatiotemporal chaos in hole--defect states.

Martin van Hecke; Martin Howard

2001-01-15T23:59:59.000Z

412

Effect of defects on long-pulse laser-induced damage of two kinds of optical thin films  

SciTech Connect (OSTI)

In order to study the effect of defects on the laser-induced damage of different optical thin films, we carried out damage experiments on two kinds of thin films with a 1ms long-pulse laser. Surface-defect and subsurface-defect damage models were used to explain the damage morphology. The two-dimensional finite element method was applied to calculate the temperature and thermal-stress fields of these two films. The results show that damages of the two films are due to surface and subsurface defects, respectively. Furthermore, the different dominant defects for thin films of different structures are discussed.

Wang Bin; Qin Yuan; Ni Xiaowu; Shen Zhonghua; Lu Jian

2010-10-10T23:59:59.000Z

413

Correlation between nuclear response and defects in CZT  

SciTech Connect (OSTI)

Vertical high pressure Bridgman (VHPB) was considered until now to be the most successful crystal growth method to produce Cd{sub 1{minus}x}Zn{sub x}Te (CZT), (0.04 < x < 0.24), for X- and gamma-ray detector crystals. Recently Horizontal Bridgman (HB) Cd{sub 1{minus}x}Zn{sub x}Te crystals produced by IMARAD Co. have also been successfully fabricated into nuclear spectroscopic radiation detectors. In view of the database of many years' study of the electrical properties of VHPB CZT grown and obtained from various sources, the authors also studied the HB CZT crystals in order to compare the defects present in both different kinds of crystals grown by different methods. The VHB-grown samples were examined using thermoelectric emission spectroscopy (TEES), X- and gamma ray spectroscopy and laser induced transient charge technique (TCT). The surface and the bulk crystalline homogeneity were mapped using triaxial double crystal x-ray diffraction (TADXRD) and infrared transmission spectroscopy (IR). They have found a correlation between crystallinity, IR transmission microstructure and trapping times. Spectrometer grade VHPB CZT crystals exhibit trapping times of 20 {micro}s for electrons and 7 {micro}s for holes, however, regions, which were opaque to IR transmission, had trapping times shorter by one order of magnitude. The trapping times of HB CZT for electrons, were 10--15 {micro}s. A similar trend has been observed on VHPB CZT crystals with poor crystallinity. The HB CZT crystals that they measured in this study had a crystallinity that was inferior to that of the best spectroscopic grade VHPB crystals.

H. Hermon; M. Schieber; R. B. James; E. Lee; E. Cross; M. Goorsky; T. Lam; T. E. Schlesinger; M. Greaves

1999-07-19T23:59:59.000Z

414

Ultrasonic nondestructive evaluation and imaging of defects in reinforced cementitious materials  

E-Print Network [OSTI]

Characterization of defect is one of the important objectives of nondestructive evaluation (NDE) for condition assessment of structures. Among many other NDE techniques, ultrasonic methods play a prominent role in the both ...

Wang, Ji-yong, 1967-

2003-01-01T23:59:59.000Z

415

Integrated approaches to elucidate the genetic architecture of congenital heart defects  

E-Print Network [OSTI]

Congenital heart defects (CHD) are structural anomalies affecting the heart, are found in 1% of the population and arise during early stages of embryo development. Without surgical and medical interventions, most of the severe CHD cases would...

Al Turki, Saeed

2014-02-04T23:59:59.000Z

416

BORON-OXYGEN DEFECTS IN COMPENSATED P-TYPE CZOCHRALSKI SILICON D. Macdonald1  

E-Print Network [OSTI]

BORON-OXYGEN DEFECTS IN COMPENSATED P-TYPE CZOCHRALSKI SILICON D. Macdonald1 , A. Liu1 , F Energy, PO Box 1, NL-1755 ZG Petten, The Netherlands. email: daniel.macdonald@anu.edu.au ABSTRACT

417

Investigation on Wave Propagation Characteristics in Plates and Pipes for Identification of Structural Defect Locations  

E-Print Network [OSTI]

For successful identification of structural defects in plates and pipes, it is essential to understand structural wave propagation characteristics such as dispersion relations. Analytical approaches to identify the dispersion relations...

Han, Je Heon

2013-07-31T23:59:59.000Z

418

Graphene flakes with defective edge terminations: Universal and topological aspects, and one-dimensional quantum behavior  

E-Print Network [OSTI]

Graphene flakes with defective edge terminations: Universal and topological aspects, and one graphene nanoflakes with reconstructed zigzag edges, where a succes- sion of pentagons and heptagons these spectra. The electronic spectra of trigonal graphene nanoflakes with reczag edge terminations exhibit

Yannouleas, Constantine

419

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Broader source: Energy.gov (indexed) [DOE]

current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

420

An analytical study of rail grinding optimization for rail-head fatigue defect prevention  

E-Print Network [OSTI]

and increased train traffic on the remaining routes. These changes in railroad industry practice have caused an increase in the rate of occurrence of rail head fatigue defects, one potential cause of train derailment. The primary form of maintenance employed...

Jones, Scott Laurence

1997-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Stochastic Damage Evolution under Static and Fatigue Loading in Composites with Manufacturing Defects  

E-Print Network [OSTI]

In this dissertation, experimental investigations and theoretical studies on the stochastic matrix cracking evolution under static and fatigue loading in composite laminates with defects are presented. The presented work demonstrates a methodology...

Huang, Yongxin

2012-07-16T23:59:59.000Z

422

PHYSICAL REVIEW B 86, 165440 (2012) Graphene flakes with defective edge terminations: Universal and topological aspects,  

E-Print Network [OSTI]

PHYSICAL REVIEW B 86, 165440 (2012) Graphene flakes with defective edge terminations: Universal (as a function of the magnetic field) are presented for trigonal graphene nanoflakes. The electronic spectra of trigonal graphene nanoflakes with reczag edge terminations exhibit certain unique

Yannouleas, Constantine

2012-01-01T23:59:59.000Z

423

Defect-Enhanced Charge Transfer by Ion-Solid Interactions in...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

transfer effects on recoil atoms. Citation: Gao F, HY Xiao, XT Zu, M Posselt, and WJ Weber.2009."Defect-Enhanced Charge Transfer by Ion-Solid Interactions in SiC using...

424

E-Print Network 3.0 - aging-related chromatin defects Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

temperature... Research Fund tion at ARS elements in cells carrying defective ORC2Lincoln's Inn Fields and ORC5 (Fox et al... United Kingdom yeast silent mating-type...

425

Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells  

E-Print Network [OSTI]

In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating ...

Bertoni, Mariana I.

426

Ab initio calculations on magnetism induced by composite defects in magnesium oxide  

SciTech Connect (OSTI)

The local magnetic state induced by the composite defects, composed of an oxygen vacancy and a nitrogen substituting oxygen, in magnesium oxide has been studied by using ab initio calculation based on density functional theory. The calculated results show that local magnetic moment can be induced by the composite defects around the oxygen vacancy, when the exchange split of the oxygen vacancy is enhanced either by the hybridization between the N-p and nearest neighbor O-p orbitals or by applying on-site Coulomb repulsion (U) and exchange interaction (J). We show that the magnetic state induced by the composite defect is energetically more stable than the non-magnetic state. In addition, we show that the U and J applied on the p-orbitals of N and O atoms may significantly impact the calculated magnetic state of the composite defect, resulting in magnetic state for a configuration that is non-magnetic by generalized gradient approximation.

Zhang, Yao-Fang [Department of Physics, Tianjin Polytechnic University, Tianjin 300384 (China); College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Feng, Min [School of Physics, Nankai University, Tianjin 300071 (China); Shao, Bin [Department of Physics, Tsinghua University, Beijing 100084 (China); Lu, Yuan; Zuo, Xu, E-mail: xzuonku@gmail.com [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Liu, Hong [Office of International Academic Exchanges, Nankai University, Tianjin 300071 (China)

2014-05-07T23:59:59.000Z

427

Real-Time Tracking and Shape Analysis of Atrial Septal Defects in 3D Echocardiography1  

E-Print Network [OSTI]

heart procedures. Our application assists pediatric atrial septal defect (ASD) closure techniques using.G.L., R.D.H.); National Institutes of Health, Diag- nostic Radiology Department, Bethesda, MD (M

428

Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint  

SciTech Connect (OSTI)

Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

Yan, F.; Johnston, S.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

2011-07-01T23:59:59.000Z

429

Integrated Droplet Routing and Defect Tolerance in the Synthesis of Digital  

E-Print Network [OSTI]

11 Integrated Droplet Routing and Defect Tolerance in the Synthesis of Digital Microfluidic Biochips TAO XU and KRISHNENDU CHAKRABARTY Duke University Microfluidic biochips are revolutionizing high to digital microfluidic platforms, the need for design automation techniques is being increasingly felt

Chakrabarty, Krishnendu

430

The use of mouse models to elucidate the genetic and environmental components of neural tube defects  

E-Print Network [OSTI]

Neural tub defects (NTDs) rank among the most common phics. congenital anomalies affecting human infants worldwide. Unfortunately, the: etiology is poorly understood accuse the genetic and environmental components contributing to their expression...

Gefrides, Lisa Anne

1998-01-01T23:59:59.000Z

431

Origin of radiation tolerance in 3C-SiC with nanolayered planar defects  

SciTech Connect (OSTI)

We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang et al., Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC containing nanolayers of (111) planar defects. We found that preferential amorphization, when it does occur, takes place at grain boundaries and at 111 and 111 planar defects. Radiationinduced point defects, such as interstitials and vacancies, migrate two-dimensionally between the (111) planar defects, which probably enhances the damage recovery.

Ishimaru, Dr. Manabu [Osaka University; Zhang, Yanwen [ORNL; Shannon, Prof. Steven [North Carolina State University; Weber, William J [ORNL

2013-01-01T23:59:59.000Z

432

E-Print Network 3.0 - active point defects Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Technology Rev. IFP, Vol. 56 (2001), No. 1, pp. 23-31 Copyright 2001, ditions Technip Summary: small number of defects acting as individual pinning points. Then we...

433

E-Print Network 3.0 - a-center defect complex Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Technology Rev. IFP, Vol. 56 (2001), No. 1, pp. 23-31 Copyright 2001, ditions Technip Summary: of defects is smaller than the capillary length, the contact line shape is...

434

E-Print Network 3.0 - active defects induced Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Technology Rev. IFP, Vol. 56 (2001), No. 1, pp. 23-31 Copyright 2001, ditions Technip Summary: . The three-dimensional deformation induced by the surface defects is...

435

Higher-Order Mass Defect Analysis for Mass Spectra of Complex...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

high-resolution mass spectrum of crude oil containing nearly 13,000 peaks. Citation: Roach PJ, J Laskin, and A Laskin.2011."Higher-Order Mass Defect Analysis for Mass Spectra of...

436

Electrical properties and defect structures of praseodymium-cerium oxide solid solutions  

E-Print Network [OSTI]

A defect chemistry model consistent with observed trends in the pO2 and temperature dependence of electrical conductivity in praseodymium cerium oxide (PCO) was developed. Four point DC conductivity measurements were made ...

Stefanik, Todd Stanley, 1973-

2004-01-01T23:59:59.000Z

437

Hydrogen effects on the point defect spectrum in Fe-C alloys  

E-Print Network [OSTI]

As part of a multi-scale approach for modeling hydrogen embrittlement in hardened steels we have investigated, employing density functional theory methods, the stability and concentrations of the point defect clusters ...

Monasterio Velásquez, Paul Rene

2008-01-01T23:59:59.000Z

438

Analysis of a Defected Dissimilar Metal Weld in a PWR Power Plant  

SciTech Connect (OSTI)

During the refueling outage 2000, inspections of the RC-loops of one of the Ringhals PWR-units, Ringhals 4, indicated surface breaking defects in the axial direction of the piping in a dissimilar weld between the Low alloy steel nozzle and the stainless safe end in the hot leg. In addition some indications were found that there were embedded defects in the weld material. These defects were judged as being insignificant to the structural integrity. The welds were inspected in 1993 with the result that no significant indications were found. The weld it self is a double U weld, where the thickness of the material is ideally 79,5 mm. Its is constructed by Inconel 182 weld material. At the nozzle a buttering was applied, also by Inconel 182. The In-service inspection, ISI, of the object indicated four axial defects, 9-16 mm deep. During fabrication, the areas where the defects are found were repaired at least three times, onto a maximum depth of 32 mm. To evaluate the defects, 6 boat samples from the four axial defects were cut from the perimeter and shipped to the hot-cell laboratory for further examination. This examination revealed that the two deep defects had been under sized by the ISI outside the requirement set by the inspection tolerances, while the two shallow defects were over sized, but within the tolerances of the detection system. When studying the safety case it became evident that there were several missing elements in the way this problems is handled with respect to the Swedish safety evaluation code. Among these the most notable at the beginning was the absence of reliable fracture mechanical data such as crack growth laws and fracture toughness at elevated temperature. Both these questions were handled by the project. The fracture mechanical evaluation has focused on a fit for service principal. Thus defects both in the unaffected zones and the disturbed zones, boat sample cutouts, of the weld have been analyzed. With reference to the Swedish safety evaluation system in accordance to the regulatory demands, a safety evaluation was performed using the R6-method. The failure assessment diagram is modified by the addition of the ASME XI safety factors both for limit load analysis and fracture assessment. This results in a very high conservatism since the secondary stresses such as residual stresses are high in the area. In order to quantify this effect an analysis in accordance to ASME IWB-3640, App. C was performed. This analysis provides the decision-makers with a sensitivity study; important to have to value the real risk of any missed defects in the area. (authors)

Efsing, P. [Barseback Kraft AB, P.O. Box 524, Loddekopinge SE-246 25 (Sweden); Lagerstrom, J. [Vattenfall AB, Ringhals, 430 22 Vaeroebacka (Sweden)

2002-07-01T23:59:59.000Z

439

Confinement of magnetostatic forward volume waves in two-dimensional magnonic crystals with line defects  

SciTech Connect (OSTI)

The mode patterns of magnetostatic forward volume waves (MSFVWs) propagating in two-dimensional magnonic crystals with line defects via periodic variation in thickness of square lattice in a yttrium iron garnet thin film are reported. The theoretical approach based on Walker's equation was employed to analyze the confinement of MSFVWs in the line defects. A good agreement between the theoretical predictions and the experimental results was obtained.

Chi, K. H.; Zhu, Y. [Department of Electrical Engineering and Computer Science, and Institute for Surface and Interface Science, University of California, Irvine, California 92697 (United States); Tsai, C. S., E-mail: cstsai@uci.edu [Department of Electrical Engineering and Computer Science, and Institute for Surface and Interface Science, University of California, Irvine, California 92697 (United States); Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China)

2014-05-07T23:59:59.000Z

440

Point Defects in CdZnTe Crystals Grown by Different Techniques  

SciTech Connect (OSTI)

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

R Gul; A Bolotnikov; H Kim; R Rodriguez; K Keeter; Z Li; G Gu; R James

2011-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Point Defects in CdZnTe Crystals Grown by Different Techniques  

SciTech Connect (OSTI)

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

Gul, R.; Bolotnikov, A.; Kim, H.K.; Rodriguez, R.; Keeter, K.; Li, Z.; Gu, G.; and James, R.B.

2011-02-02T23:59:59.000Z

442

Modulated Amplitude Waves and Defect Formation in the One-Dimensional Complex Ginzburg-Landau Equation  

E-Print Network [OSTI]

The transition from phase chaos to defect chaos in the complex Ginzburg-Landau equation (CGLE) is related to saddle-node bifurcations of modulated amplitude waves (MAWs). First, the spatial period P of MAWs is shown to be limited by a maximum P_SN which depends on the CGLE coefficients; MAW-like structures with period larger than P_SN evolve to defects. Second, slowly evolving near-MAWs with average phase gradients $\

Lutz Brusch; Alessandro Torcini; Martin van Hecke; Martin G. Zimmermann; Markus Baer

2001-04-10T23:59:59.000Z

443

Structure of a Glomulin-RBX1-CUL1 Complex: Inhibition of a RING E3 Ligase through Masking of Its E2-Binding Surface  

SciTech Connect (OSTI)

The approximately 300 human cullin-RING ligases (CRLs) are multisubunit E3s in which a RING protein, either RBX1 or RBX2, recruits an E2 to catalyze ubiquitination. RBX1-containing CRLs also can bind Glomulin (GLMN), which binds RBX1's RING domain, regulates the RBX1-CUL1-containing SCF{sup FBW7} complex, and is disrupted in the disease Glomuvenous Malformation. Here we report the crystal structure of a complex between GLMN, RBX1, and a fragment of CUL1. Structural and biochemical analyses reveal that GLMN adopts a HEAT-like repeat fold that tightly binds the E2-interacting surface of RBX1, inhibiting CRL-mediated chain formation by the E2 CDC34. The structure explains the basis for GLMN's selectivity toward RBX1 over RBX2, and how disease-associated mutations disrupt GLMN-RBX1 interactions. Our study reveals a mechanism for RING E3 ligase regulation, whereby an inhibitor blocks E2 access, and raises the possibility that other E3s are likewise controlled by cellular proteins that mask E2-binding surfaces to mediate inhibition.

Duda, David M.; Olszewski, Jennifer L.; Tron, Adriana E.; Hammel, Michal; Lambert, Lester J.; Waddell, M. Brett; Mittag, Tanja; DeCaprio, James A.; Schulman, Brenda A. (BWH); (LBNL); (SJCH); (DFCI)

2012-11-01T23:59:59.000Z

444

The role of helium implantation induced vacancy defect on hardening of tungsten  

SciTech Connect (OSTI)

Vacancy-type defects created by helium implantation in tungsten and their impact on the nano-hardness characteristics were investigated by correlating the results from the positron annihilation spectroscopy and the nano-indentation technique. Helium implantation was performed at room temperature (RT) and at an elevated temperate of 600?°C. Also, the effect of post-annealing of the RT implanted sample was studied. The S parameter characterizing the open volume in the material was found to increase after helium irradiation and is significantly enhanced for the samples thermally treated at 600?°C either by irradiation at high temperature or by post-annealing. Two types of helium-vacancy defects were detected after helium irradiation; small defects with high helium-to-vacancy ratio (low S parameter) for RT irradiation and large defects with low helium-to-vacancy ratio (high S parameter) for thermally treated tungsten. The hardness of the heat treated tungsten coincides with the S parameter, and hence is controlled by the large helium-vacancy defects. The hardness of tungsten irradiated at RT without thermal treatment is dominated by manufacturing related defects such as dislocation loops and impurity clusters and additionally by trapped He atoms from irradiation effects, which enhance hardness. He-stabilized dislocation loops mainly cause the very high hardness values in RT irradiated samples without post-annealing.

Ou, Xin, E-mail: x.ou@hzdr.de [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200250 (China); Anwand, Wolfgang, E-mail: w.anwand@hzdr.de; Kögler, Reinhard, E-mail: r.koegler@hzdr.de [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Zhou, Hong-Bo [Department of Physics, Beihang University, Beijing 100191 (China); Richter, Asta, E-mail: asta.richter@th-wildau.de [Technische Hochschule Wildau, Hochschulring1, 15745 Wildau (Germany)

2014-03-28T23:59:59.000Z

445

Evaluation of the association between birth defects and exposure to ambient vinyl chloride  

SciTech Connect (OSTI)

Birth defects incidence for infants born to residents of Shawinigan, Canada in 1966-1979 were significantly higher than in three comparison communities. Since there has been a vinyl chloride polymerization plant in this town since 1943 from which ten cases of angiosarcoma of the liver have been identified, this study explores the possible association between exposure to vinyl chloride monomer (VCM) in ambient air and the occurrence of birth defects in the community. The excess of birth defects fluctuated seasonally in a way that corresponded to changes in VCM concentration in the environment. Mothers who gave birth to malformed children were younger on average in Shawinigan than in the comparison communities. However, there was no excess of still-births in Shawinigan. The excess in birth defects involved most organ systems, and variation in birth-defect rates among school districts could not be accounted for by estimates of VCM in the atmosphere. The occupational and residential histories of parents who gave birth to malformed infants were compared with those of parents of normal infants. The two groups did not differ in occupational exposure or closeness of residence to the vinyl chloride polymerization plant. Some descriptive data from this study raised the hypothesis of an association between VCM in the air and birth defects in the exposed community, but as a whole, within the sample size available, such an association could not be substantiated.

Theriault, G.; Iturra, H.; Gingras, S.

1983-06-01T23:59:59.000Z

446

Leak before break behaviour of austenitic and ferritic pipes containing circumferential defects  

SciTech Connect (OSTI)

Several research projects carried out at MPA Stuttgart to investigate the Leak-before-Break (LBB) behavior of safety relevant pressure bearing components are summarized. Results presented relate to pipes containing circumferential defects subjected to internal pressure and external bending loading. An overview of the experimentally determined results for ferritic components is presented. For components containing postulated or actual defects, the dependence of the critical loading limit on the defect size is shown in the form of LBB curves. These are determined experimentally and/or by calculation for through-wall slits, and represent the boundary curve between leakage and massive fracture. For surface defects and a given bending moment and internal pressure, no fracture will occur if the length at leakage remains smaller than the critical defect length given by the LBB curve for through-wall defects. The predictive capability of engineering calculational methods are presented by way of example. The investigation programs currently underway, testing techniques, and initial results are outlined.

Stadtmueller, W.; Sturm, D.

1997-04-01T23:59:59.000Z

447

Effects of local defect growth in direct-drive cryogenic implosions on OMEGA  

SciTech Connect (OSTI)

Spherically symmetric, low-adiabat (adiabat ? ? 3) cryogenic direct-drive-implosion experiments on the OMEGA laser [T. R. Boehly et al., Opt. Commun. 133, 495 (1995)] yield less than 10% of the neutrons predicted in one-dimensional hydrodynamic simulations. Two-dimensional hydrodynamic simulations suggest that this performance degradation can be explained assuming perturbations from isolated defects of submicron to tens-of-micron scale on the outer surface or inside the shell of implosion targets. These defects develop during the cryogenic filling process and typically number from several tens up to hundreds for each target covering from about 0.2% to 1% of its surface. The simulations predict that such defects can significantly perturb the implosion and result in the injection of about 1 to 2 ?g of the hot ablator (carbon-deuterium) and fuel (deuterium-tritium) materials from the ablation surface into the targets. Both the hot mass injection and perturbations of the shell reduce the final shell convergence ratio and implosion performance. The injected carbon ions radiatively cool the hot spot, reducing the fuel temperature, and further reducing the neutron yield. The negative effect of local defects can be minimized by decreasing the number and size of these defects and/or using more hydrodynamically stable implosion designs with higher shell adiabat.

Igumenshchev, I. V.; Shmayda, W. T.; Harding, D. R.; Sangster, T. C. [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States)] [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States); Goncharov, V. N. [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States) [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14623 (United States); Meyerhofer, D. D. [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States) [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14623 (United States); Department of Physics and Astronomy, University of Rochester, Rochester, New York 14623 (United States)

2013-08-15T23:59:59.000Z

448

Development of SQUID microscope for localization and imaging of material defects (NDE)  

SciTech Connect (OSTI)

Dramatic progress was made in FY1997, the first full year of implementing a new technique for detecting and imaging material defects in nuclear weapon components. Design, fabrication, and initial tests of a ``SQUID Microscope`` has been completed utilizing the extraordinary sensitivity of High-Critical-Temperature (HTC) Superconducting QUantum Interference Device (SQUID) technology. SQUIDs, the most sensitive magnetic field detectors known, are used to sense magnetic anomalies caused by the perturbation of an induction field by defects in the material under examination. Time variation of the amplitude (A) and angle ({theta}) of an induction field with unique spatial distribution allows examination of material defects as a function of depth and orientation within the sample. Variation of the frequency of amplitude variation, {Omega}(A), enables depth selection in a given sample. Scanning the sample in physical, A, and {theta} space enables detection and localization of defects to high precision. A few examples of the material defects anticipated for study include cracks, stress fractures, corrosion, separation between layers, and material inclusions. Design and fabrication of a prototype SQUID Microscope has been completed during FY97. Extensive testing of the physical, thermal, precision mechanical, and vacuum performance of the SQUID microscope were performed. First preliminary tests of the integrated system have been performed and initial results were obtained in the first week of September 1997, more than 3 months ahead of schedule.

Kraus, R.H. Jr.; Espy, M.; Atencio, L.

1997-10-01T23:59:59.000Z

449

Atomistic simulation of Er irradiation induced defects in GaN nanowires  

SciTech Connect (OSTI)

Classical molecular dynamics simulation was used to irradiate a GaN nanowire with rear-earth erbium (Er). Ten cumulative irradiations were done using an ion energy of 37.5?keV on a 10?×?10?nm{sup 2} surface area which corresponds to a fluence of 1?×?10{sup 13?}cm{sup ?2}. We studied the location and types of defects produced in the irradiation. Er implantation leads to a net positive (expansion) strain in the nanowire and especially at the top region a clear expansion has been observed in the lateral and axial directions. The lattice expansion is due to the hydrostatic strain imposed by a large number of radiation induced defects at the top of the NW. Due to the large surface-to-volume ratio, most of the defects were concentrated at the surface region, which suggests that the experimentally observed yellow luminescence (YL) in ion implanted GaN NWs arises from surface defects. We observed big clusters of point defects and vacancy clusters which are correlated with stable lattice strain and the YL band, respectively.

Ullah, M. W., E-mail: mohammad.ullah@helsinki.fi; Kuronen, A.; Djurabekova, F.; Nordlund, K. [Department of Physics, University of Helsinki, P.O. Box 64, FIN-00014 (Finland); Stukowski, A. [Technische Universität Darmstadt, 64287 Darmstadt (Germany)

2014-09-28T23:59:59.000Z

450

Defect-related internal dissipation in mechanical resonators and the study of coupled mechanical systems.  

SciTech Connect (OSTI)

Understanding internal dissipation in resonant mechanical systems at the micro- and nanoscale is of great technological and fundamental interest. Resonant mechanical systems are central to many sensor technologies, and microscale resonators form the basis of a variety of scanning probe microscopies. Furthermore, coupled resonant mechanical systems are of great utility for the study of complex dynamics in systems ranging from biology to electronics to photonics. In this work, we report the detailed experimental study of internal dissipation in micro- and nanomechanical oscillators fabricated from amorphous and crystalline diamond materials, atomistic modeling of dissipation in amorphous, defect-free, and defect-containing crystalline silicon, and experimental work on the properties of one-dimensional and two-dimensional coupled mechanical oscillator arrays. We have identified that internal dissipation in most micro- and nanoscale oscillators is limited by defect relaxation processes, with large differences in the nature of the defects as the local order of the material ranges from amorphous to crystalline. Atomistic simulations also showed a dominant role of defect relaxation processes in controlling internal dissipation. Our studies of one-dimensional and two-dimensional coupled oscillator arrays revealed that it is possible to create mechanical systems that should be ideal for the study of non-linear dynamics and localization.

Friedmann, Thomas Aquinas; Czaplewski, David A.; Sullivan, John Patrick; Modine, Normand Arthur; Wendt, Joel Robert; Aslam, Dean (Michigan State University, Lansing, MI); Sepulveda-Alancastro, Nelson (University of Puerto Rico, Mayaguez, PR)

2007-01-01T23:59:59.000Z

451

Estimate of the allowable dimensions of diagnosed defects in category III and IV welded pipeline joints{sup 1}  

SciTech Connect (OSTI)

An approach for estimating the permissible dimensions of technological defects in butt welded joints in category III and IV pipelines is described. The allowable size of a welding defect is determined from the condition of compliance with the specifications on strength for a reference cross section (damaged joint) of the pipeline taking into account its weakening by a given defect.With regard to the fairly widespread discovery of technological defects in butt welded joints during diagnostics of auxiliary pipelines for thermal electric power plants, the proposed approach can be used in practice by repair and consulting organizations.

Grin', E. A.; Bochkarev, V. I. [JSC 'All-Russia Thermal Engineering Institute' (JSC 'VTI') (Russian Federation)] [JSC 'All-Russia Thermal Engineering Institute' (JSC 'VTI') (Russian Federation)

2013-01-15T23:59:59.000Z

452

The effect of magnetic field on bistability in 1D photonic crystal doped by magnetized plasma and coupled nonlinear defects  

SciTech Connect (OSTI)

In this work, we study the defect mode and bistability behavior of 1-D photonic band gap structure with magnetized plasma and coupled nonlinear defects. The transfer matrix method has been employed to investigate the magnetic field effect on defect mode frequency and bistability threshold. The obtained results show that the frequency of defect mode and bistability threshold can be altered, without changing the structure of the photonic multilayer. Therefore, the bistability behavior of the subjected structure in the presence of magnetized plasma can be utilized in manufacturing wide frequency range devices.

Mehdian, H.; Mohammadzahery, Z.; Hasanbeigi, A. [Department of Physics and Institute for Plasma Research, Kharazmi University, 49 Dr Mofatteh Avenue, Tehran 15614 (Iran, Islamic Republic of)] [Department of Physics and Institute for Plasma Research, Kharazmi University, 49 Dr Mofatteh Avenue, Tehran 15614 (Iran, Islamic Republic of)

2014-01-15T23:59:59.000Z

453

Modulated Amplitude Waves and the Transition from Phase to Defect Chaos  

E-Print Network [OSTI]

The mechanism for transitions from phase to defect chaos in the one-dimensional complex Ginzburg-Landau equation (CGLE) is presented. We introduce and describe periodic coherent structures of the CGLE, called Modulated Amplitude Waves (MAWs). MAWs of various period P occur naturally in phase chaotic states. A bifurcation study of the MAWs reveals that for sufficiently large period P, pairs of MAWs cease to exist via a saddle-node bifurcation. For periods beyond this bifurcation, incoherent near-MAW structures occur which evolve toward defects. This leads to our main result: the transition from phase to defect chaos takes place when the periods of MAWs in phase chaos are driven beyond their saddle-node bifurcation.

Lutz Brusch; Martin G. Zimmermann; Martin van Hecke; Markus Baer; Alessandro Torcini

2000-05-18T23:59:59.000Z

454

Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states  

SciTech Connect (OSTI)

The electronic and ionic transports in 32–56?nm thick anodic aluminum oxide films are investigated before and after a 1-h anneal at 200–400?°C in argon. Results are correlated to their defect density as measured by the Mott-Schottky technique. Solid state measurements show that electronic conduction upon annealing is hindered by an increase in the Schottky emission barrier, induced by a reduction in dopant density. Using an electrochemical contact, the films fail rapidly under cathodic polarization, unless defect density is decreased down to 10{sup 17}?cm{sup ?3}, resulting in a three order of magnitude reduction in current and no visible gas evolution. Under anodic polarization, the decrease in defect density delays the onset of ionic conduction as well as further oxide growth and failure.

Mibus, M.; Zangari, G. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jensen, C. [Department of Chemical Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Hu, X.; Reed, M. L. [Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Knospe, C. [Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)

2014-06-16T23:59:59.000Z

455

Multiscale quantum-defect theory and its application to atomic spectrum  

E-Print Network [OSTI]

We present a multiscale quantum-defect theory based on the first analytic solution for a two-scale long range potential consisting of a Coulomb potential and a polarization potential. In its application to atomic structure, the theory extends the systematic understanding of atomic Rydberg states, as afforded by the standard single-scale quantum-defect theory, to a much greater range of energies to include the first few excited states and even the ground state. Such a level of understanding has important implications not only on atomic structure, but also on the electronic structure of molecules and on atomic and molecular interactions and reactions. We demonstrate the theory by showing that it provides an analytic description of the energy variations of the standard Coulomb quantum defects for alkali-metal atoms.

Fu, Haixiang; Tey, Meng Khoon; You, Li; Gao, Bo

2015-01-01T23:59:59.000Z

456

A qualitative study of spin polarization effect in defect tuned Co/graphene/Co nanostructures  

SciTech Connect (OSTI)

Theoretical reports predict that in contact with a ferromagnetic giant spin, spin polarization evolves in defective graphene since defects in graphene act as local spin moments. We have synthesized different Co/graphene/Co nano spin valve like structures tuning the degree of defect applying ultrasonic vibration and characterized them by Raman spectroscopy. Initially with increasing I{sub D}/I{sub G} ratio in Raman spectra, antiferromagnetic coupling between the Co nanosheets on either sides of graphene enhances leading to betterment in spin transport through graphene. But for highest I{sub D}/I{sub G}, a totally new phenomenon called antiferro quadrupolar ordering (AFQ) takes place which eventually reduces the spin polarization effect.

Mandal, Sumit, E-mail: smtdone@gmail.com, E-mail: cnssks@iacs.res.in; Saha, Shyamal K., E-mail: smtdone@gmail.com, E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

2014-10-15T23:59:59.000Z

457

Higher-Order Mass Defect Analysis for Mass Spectra of Complex Organic Mixtures  

SciTech Connect (OSTI)

Higher-order mass defect analysis is introduced as a unique formula assignment and visualization method for the analysis of complex mass spectra. This approach is an extension of the concepts of Kendrick mass transformation widely used for identification of homologous compounds differing only by a number of base units (e.g., CH2, H2, O, CH2O, etc.) in complex mixtures. We present an iterative renormalization routine for defining higher order homologous series and multidimensional clustering of mass spectral features. This approach greatly simplifies visualization of complex mass spectra and increases the number of chemical formulae that can be confidently assigned for given mass accuracy. The potential for using higher-order mass defects for data reduction and visualization is shown. Higher-order mass defect analysis is described and demonstrated through third-order analysis of a de-isotoped high-resolution mass spectrum of crude oil containing nearly 13,000 peaks.

Roach, Patrick J.; Laskin, Julia; Laskin, Alexander

2011-06-15T23:59:59.000Z

458

In-growth of an electrically active defect in high-purity silicon after proton irradiation  

SciTech Connect (OSTI)

Defect-related energy levels in the lower half of the band gap of silicon have been studied with transient-capacitance techniques in high-purity, carbon and oxygen lean, plasma-enhanced chemical-vapor deposition grown, n-and p-type silicon layers after 2-MeV proton irradiations at temperatures at or just below room temperature. The in-growth of a distinct line in deep-level transient spectroscopy spectra, corresponding to a level in the band gap at E{sub V} + 0.357 eV where E{sub V} is the energy of the valence band edge, takes place for anneal temperatures at around room temperature with an activation energy of 0.95 ± 0.08 eV. The line disappears at an anneal temperature of around 450 K. The corresponding defect is demonstrated not to contain boron, carbon, oxygen, or phosphorus. Possible defect candidates are discussed.

Nylandsted Larsen, A.; Juul Pedersen, H.; Christian Petersen, M. [Department of Physics and Astronomy, and Interdisciplinary Nanoscience Center, Aarhus University, Aarhus (Denmark)] [Department of Physics and Astronomy, and Interdisciplinary Nanoscience Center, Aarhus University, Aarhus (Denmark); Privitera, V. [CNR-IMM, Institute of Microelectronics and Microsystems, Catania (Italy)] [CNR-IMM, Institute of Microelectronics and Microsystems, Catania (Italy); Gurimskaya, Y.; Mesli, A. [IM2NP, CNRS (UMR 7334) and Université Aix-Marseille, 13397 Marseille Cedex 20 (France)] [IM2NP, CNRS (UMR 7334) and Université Aix-Marseille, 13397 Marseille Cedex 20 (France)

2013-12-14T23:59:59.000Z

459

Electrostatic particle trap for ion beam sputter deposition  

DOE Patents [OSTI]

A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

Vernon, Stephen P. (Pleasanton, CA); Burkhart, Scott C. (Livermore, CA)

2002-01-01T23:59:59.000Z

460

Radioactive Fission Product Release from Defective Light Water Reactor Fuel Elements  

SciTech Connect (OSTI)

Results are provided of the experimental investigation of radioactive fission product (RFP) release, i.e., krypton, xenon, and iodine radionuclides from fuel elements with initial defects during long-term (3 to 5 yr) irradiation under low linear power (5 to 12 kW/m) and during special experiments in the VK-50 vessel-type boiling water reactor.The calculation model for the RFP release from the fuel-to-cladding gap of the defective fuel element into coolant was developed. It takes into account the convective transport in the fuel-to-cladding gap and RFP sorption on the internal cladding surface and is in good agreement with the available experimental data. An approximate analytical solution of the transport equation is given. The calculation dependencies of the RFP release coefficients on the main parameters such as defect size, fuel-to-cladding gap, temperature of the internal cladding surface, and radioactive decay constant were analyzed.It is shown that the change of the RFP release from the fuel elements with the initial defects during long-term irradiation is, mainly, caused by fuel swelling followed by reduction of the fuel-to-cladding gap and the fuel temperature. The calculation model for the RFP release from defective fuel elements applicable to light water reactors (LWRs) was developed. It takes into account the change of the defective fuel element parameters during long-term irradiation. The calculation error according to the program does not exceed 30% over all the linear power change range of the LWR fuel elements (from 5 to 26 kW/m)

Konyashov, Vadim V.; Krasnov, Alexander M. [State Scientific Centre of Russian Federation-Research Institute of Atomic Reactors (Russian Federation)

2002-04-15T23:59:59.000Z

Note: This page contains sample records for the topic "lithography mask defects" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Identifying structural flow defects in disordered solids using machine learning methods  

E-Print Network [OSTI]

We use machine learning methods on local structure to identify flow defects - or regions susceptible to rearrangement - in jammed and glassy systems. We apply this method successfully to two disparate systems: a two dimensional experimental realization of a granular pillar under compression, and a Lennard-Jones glass in both two and three dimensions above and below its glass transition temperature. We also identify characteristics of flow defects that differentiate them from the rest of the sample. Our results show it is possible to discern subtle structural features responsible for heterogeneous dynamics observed across a broad range of disordered materials.

Ekin D. Cubuk; Samuel S. Schoenholz; Jennifer M. Rieser; Brad D. Malone; Joerg Rottler; Douglas J. Durian; Efthimios Kaxiras; Andrea J. Liu

2014-09-24T23:59:59.000Z

462

Atomic configuration of irradiation-induced planar defects in 3C-SiC  

SciTech Connect (OSTI)

The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

Lin, Y. R. [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); National Synchrotron Radiation Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan (China); Ho, C. Y. [Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Hsieh, C. Y.; Chang, M. T.; Lo, S. C. [Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Chen, F. R. [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Kai, J. J., E-mail: ceer0001@gmail.com [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China)

2014-03-24T23:59:59.000Z

463

All-optical coherent population trapping with defect spin ensembles in silicon carbide  

E-Print Network [OSTI]

Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions, with properties that are similar to the nitrogen-vacancy defect in diamond. We report experiments on 4H-SiC that investigate all-optical addressing of spin states with the zero-phonon-line transitions. Our magneto-spectroscopy results identify the spin $S=1$ structure of the ground and excited state, and a role for decay via intersystem crossing. We use these results for demonstrating coherent population trapping of spin states with divacancy ensembles that have particular orientations in the SiC crystal.

Olger V. Zwier; Danny O'Shea; Alexander R. Onur; Caspar H. van der Wal

2014-11-06T23:59:59.000Z

464

Single Defect Center Scanning Near-Field Optical Microscopy on Graphene  

E-Print Network [OSTI]

We demonstrate high resolution scanning fluorescence resonance energy transfer 10 microscopy between a single nitrogen-vacancy center as donor and graphene as acceptor. 11 Images with few nanometer resolution of single and multilayer graphene structures were 12 attained. An energy transfer efficiency of 30% at distances of 10nm between a single 13 defect and graphene was measured. Further the energy transfer distance dependence of 14 the nitrogen-vacancy center to graphene was measured to show the predicted d-4 15 dependence. Our studies pave the way towards a diamond defect center based versatile 16 single emitter scanning microscope.

J. Tisler; T. Oeckinghaus; R. Stöhr; R. Kolesov; F. Reinhard; J. Wrachtrup

2013-01-02T23:59:59.000Z

465

Role of point defects in the photosensitivity of hydrogen-loaded phosphosilicate glass  

SciTech Connect (OSTI)

It is shown that point defect modifications in hydrogen-loaded phosphosilicate glass (PSG) do not play a central role in determining its photosensitivity. Photochemical reactions that involve a two-step point defect modification and pre-exposure effect are incapable of accounting for photoinduced refractive index changes. It seems likely that a key role in UV-induced refractive index modifications is played by structural changes in the PSG network. Experimental data are presented that demonstrate intricate network rearrangement dynamics during UV exposure of PSG. (fiber optics)

Larionov, Yu V [A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

2010-08-03T23:59:59.000Z

466

Electrochemical impedance spectroscopy system and methods for determining spatial locations of defects  

DOE Patents [OSTI]

A method and apparatus for determining spatial locations of defects in a material are described. The method includes providing a plurality of electrodes in contact with a material, applying a sinusoidal voltage to a select number of the electrodes at a predetermined frequency, determining gain and phase angle measurements at other of the electrodes in response to applying the sinusoidal voltage to the select number of electrodes, determining impedance values from the gain and phase angle measurements, computing an impedance spectrum for an area of the material from the determined impedance values, and comparing the computed impedance spectrum with a known impedance spectrum to identify spatial locations of defects in the material.

Glenn, David F.; Matthern, Gretchen E.; Propp, W. Alan; Glenn, Anne W.; Shaw, Peter G.

2006-08-08T23:59:59.000Z

467

All-optical switching and multistability in photonic structures with liquid crystal defects  

E-Print Network [OSTI]

We demonstrate that one-dimensional photonic crystals with pure nematic liquid-crystal defects can operate as all-optical switching devices based on optical orientational nonlinearities of liquid crystals. We show that such a periodic structure is responsible for a modulated threshold of the optical Fr\\'eedericksz transition in the spectral domain, and this leads to all-optical switching and light-induced multistability. This effect has no quasi-statics electric field analogue, and it results from nonlinear coupling between light and a defect mode.

Andrey E. Miroshnichenko; Etienne Brasselet; Yuri S. Kivshar

2007-12-24T23:59:59.000Z

468

Friedel sum rule in the presence of topological defects for graphene  

E-Print Network [OSTI]

The Friedel sum rule is extended to deal with topological defects for the case of a graphene cone in the presence of an external Coulomb charge. The dependence in the way the number of states change due to both the topological defect as well as the Coulomb charge are studied. Our analysis addresses both the cases of a subcritical as well as a supercritical value of the Coulomb charge. We also discuss the experimental implications of introducing a self-adjoint extension of the system Hamiltonian. We argue that the boundary conditions following from the self-adjoint extension encode the effect of short range interactions present in the system.

Baishali Chakraborty; Kumar S. Gupta; Siddhartha Sen

2014-03-20T23:59:59.000Z

469

Atomic delocalisation as a microscopic origin of two-level defects in Josephson junctions  

E-Print Network [OSTI]

Identifying the microscopic origins of decoherence sources prevalent in Josephson junction based circuits is central to their use as functional quantum devices. Focussing on so called "strongly coupled" two-level defects, we construct a theoretical model using the atomic position of the oxygen which is spatially delocalised in the oxide forming the Josephson junction barrier. Using this model, we investigate which atomic configurations give rise to two-level behaviour of the type seen in experiments. We compute experimentally observable parameters for phase qubits and examine defect response under the effects of applied electric field and strain.

Timothy C. DuBois; Salvy P. Russo; Jared H. Cole

2014-08-25T23:59:59.000Z

470

Enhanced UV and suppressed defect related emission in yttrium doped zinc oxide  

SciTech Connect (OSTI)

Yttrium doped ZnO (YZO) synthesized through conventional solid state reaction method using ZnO and Y{sub 2}O{sub 3} as starting material. The formation of YZO compounds were confirmed by X-ray diffraction and Raman spectroscopy. Photoluminescence measurements revealed an enhanced ultra-violet (UV) and suppressed defect related emission in YZO which is due to reduction in the concentration of the defects related to oxygen interstitials (O{sub i}) and zinc vacancy (V{sub Zn}) of ZnO.

Sharma, Vikas; Vyas, Rishi; Sachdev, K. [Department of Physics, Malaviya National Institute of Technology, Jaipur - 302017 (India); Kumar, Parmod, E-mail: parmodphysics@gmail.com; Malik, Hitendra K. [Department of Physics, Indian Institute of Technology Delhi, New Delhi - 110016 (India); Rana, Geeta [Department of Physics, G. B. Pant University of Agriculture and Technology, Pantnagar - 263145 (India); Asokan, K. [Material Science Division, Inter University Accelerator Centre, New Delhi - 110067 (India)

2014-04-24T23:59:59.000Z

471

Topological defects and gapless modes in insulators and superconductors Jeffrey C. Y. Teo and C. L. Kane  

E-Print Network [OSTI]

Topological defects and gapless modes in insulators and superconductors Jeffrey C. Y. Teo and C. L topological defects in insulators and superconductors described by spatially modulated Bloch and Bogoliubov de that the combination of time-reversal symmetry and the spin-orbit interaction can lead to topologi- cal insulating

Kane, Charles

472

PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER  

E-Print Network [OSTI]

267 PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER Laboratoire Einstein, 69621 Villeurbanne Cedex, France Résumé. 2014 Les défauts électriquement inactifs dans CdTe ont of electrically inactive defects has been performed on CdTe single crystals by two different experimental

Boyer, Edmond

473

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine,1  

E-Print Network [OSTI]

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine Laboratory, Golden, CO 80401 ABSTRACT Polycrystalline thin-film CdTe is one of the leading materials used various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL

Sites, James R.

474

I point my heart with the tip of my ngers -Biometry for the diagnosis congenital heart defects  

E-Print Network [OSTI]

I point my heart with the tip of my ngers - Biometry for the diagnosis congenital heart defects Vasculaires, Hôpital de Pontchaillou, Rennes, France Abstract Congenital heart defects are characterized by abnormal positioning of some anatomical structures relative to a normal heart. Classically the classication

Boyer, Edmond

475

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering  

SciTech Connect (OSTI)

The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 Degree-Sign C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 Degree-Sign C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {l_brace}311{r_brace} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation.

Oliviero, E. [CSNSM, CNRS-IN2P3-Universite Paris-Sud, Batiment 108, 91405 Orsay (France); David, M. L.; Beaufort, M. F.; Barbot, J. F. [Institut Pprime, CNRS-Universite de Poitiers-ENSMA, SP2MI, Bd Marie et Pierre Curie, BP30179, 86962 Futuroscope-Chasseneuil Cedex (France); Fichtner, P. F. P. [Departamento de Metalurgia, Universidade Federal do Rio Grande do Sul, Av Bento Goncalves 9500, Caixa Postal 15051, 90035-190 Porto Alegre, RS (Brazil)

2013-02-28T23:59:59.000Z

476

PARTIAL DISCHARGE TESTING OF DEFECTIVE THREE-PHASE PILC CABLE UNDER RATED CONDITIONS  

E-Print Network [OSTI]

PARTIAL DISCHARGE TESTING OF DEFECTIVE THREE-PHASE PILC CABLE UNDER RATED CONDITIONS J. A. Hunter 1 lifespan. An increase in the failure rates of paper insulated lead covered (PILC) cables that make up is to document the effects of mechanical stress on the generation of partial discharge (PD) for cables of PILC

Southampton, University of

477

SOLID STATE NMR STUDY SUPPORTING THE LITHIUM VACANCY DEFECT MODEL IN CONGRUENT LITHIUM  

E-Print Network [OSTI]

@ Pergamon SOLID STATE NMR STUDY SUPPORTING THE LITHIUM VACANCY DEFECT MODEL IN CONGRUENT LITHIUM performed on powdered and single crystal lithium niobate of defectivecongruent composition (48.4%LirO;51.6% NbrOr) using a magnetic field strength of 7.05 Tesla with the aim to distinguish between a lithium

Bluemel, Janet

478

Empirical Evaluation of Defect Projection Models for Widely-deployed Production Software Systems  

E-Print Network [OSTI]

Ray, P.Santhanam Center for Software Engineering IBM T.J. Watson Research Center Hawthorne, NY 10532 Descriptors D.2.8 [Software Engineering]: Empirical Studies, Metrics, Reliability Engineering Keywords Defect modeling, empirical research, COTS, open source software, maintenance resource planning, software insurance

Herbsleb, James D.

479

Optimal Randomized Group Testing: A Canonical Form and the One-Defective Case  

E-Print Network [OSTI]

In the group testing problem, a set of n elements is given which are either defective (positive) or non. A group test takes any subset Q of elements, called a pool. The test (or pool) is positive if Q P is not limited, and tests can be done sequentially. We sometimes refer to a set of pools as a pooling design

Damaschke, Peter

480

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance  

E-Print Network [OSTI]

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance P.J. Sellin1-destructive material characterisation techniques have been applied to CdTe wafers grown by the Travelling Heater Method Imaging Group PL mapping of whole CdTe wafers PL ( =819 nm) scan for two CdTe wafers, (left: wafer L700

Sellin, Paul

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to obtain the most current and comprehensive results.


481

USE OF GCLS TO CONTROL LEAKAGE THROUGH GEOMEMBRANE DEFECTS UNDER HIGH HYDRAULIC HEADS  

E-Print Network [OSTI]

USE OF GCLS TO CONTROL LEAKAGE THROUGH GEOMEMBRANE DEFECTS UNDER HIGH HYDRAULIC HEADS Christine T liners under conditions representative of dams (i.e., high hydraulic heads). Specifically, the objective of interface contact, hydraulic head, and GCL hydration procedures on the leakage rate were considered

Zornberg, Jorge G.

482

Identification of defect sites on oxide surfaces by metastable impact electron spectroscopy  

E-Print Network [OSTI]

Identification of defect sites on oxide surfaces by metastable impact electron spectroscopy S). The electronic and chemical properties of the thin films are identical to those of the corre- sponding bulk that exhibit essentially the same electronic and chemical properties of the corresponding bulk single crystals

Goodman, Wayne

483

Atomic-Scale Mapping of Thermoelectric Power on Graphene: Role of Defects and Boundaries  

E-Print Network [OSTI]

by conductance measurements alone. Indeed, the thermoelectric properties of this two-dimensional material have scattering effects in thermoelectric materials. An alternative way to study the thermoelectric properties1 Atomic-Scale Mapping of Thermoelectric Power on Graphene: Role of Defects and Boundaries Jewook

Feenstra, Randall

484

Grain boundary defects initiation at the outer surface of dissimilar welds: Corrosion mechanism studies  

SciTech Connect (OSTI)

Dissimilar welds located on the primary coolant system of the French PWR plants exhibit grain boundary defects in the true austenitic zones of the first buttering layer. If grain boundaries reach the interface, they can extend to the martensitic band. Those defects are filled with compact oxides. In addition, the ferritic base metal presents some pits along the interface. Nowadays, three mechanisms are proposed to explain the initiation of those defects: stress corrosion cracking, intergranular corrosion and high temperature intergranular oxidation. This paper is dealing with the study of the mechanisms involved in the corrosion phenomenon. Intergranular corrosion tests performed on different materials show that only the first buttering layer, even with some {delta} ferrite, is sensitized. The results of stress corrosion cracking tests in water solutions show that intergranular cracking is possible on a bulk material representative of the first buttering layer. It is unlikely on actual dissimilar welds where the ferritic base metal protects the first austenitic layer by galvanic coupling. Therefore, the stress corrosion cracking assumption cannot explain the initiation of the defects in aqueous environment. The results of the investigations and of the corrosion studies led to the conclusion that the atmosphere could be the only possible aggressive environment. This conclusion is based on natural atmospheric exposure and accelerated corrosion tests carried out with SO{sub 2} additions in controlled atmosphere. They both induce a severe intergranular corrosion on true sensitized austenitic materials.

Bouvier, O. De; Yrieix, B. [Electricite De France, Moret Sur Loing (France). Research and Development Division

1995-12-31T23:59:59.000Z

485

Defect Chemistry of Yttrium-Doped Barium Zirconate: A Thermodynamic Analysis of Water Uptake  

E-Print Network [OSTI]

generates oxygen vacancies as charge compensating defects. By means of treatment in water vapor holes are generated (the oxidation reaction8 ). Thus, protons, oxygen vacancies, and electronic holes thereof. In contrast to oxygen ion conductors, which typically have a constant carrier (oxygen vacancy

486

Last Passage Percolation with a Defect Line and the Solution of the Slow Bond Problem  

E-Print Network [OSTI]

We address the question of how a localized microscopic defect, especially if it is small with respect to certain dynamic parameters, affects the macroscopic behavior of a system. In particular we consider two classical exactly solvable models: Ulam's problem of the maximal increasing sequence and the totally asymmetric simple exclusion process. For the first model, using its representation as a Poissonian version of directed last passage percolation on $\\mathbb R^2$, we introduce the defect by placing a positive density of extra points along the diagonal line. For the latter, the defect is produced by decreasing the jump rate of each particle when it crosses the origin. The powerful algebraic tools for studying these processes break down in the perturbed versions of the models. Taking a more geometric approach we show that in both cases the presence of an arbitrarily small defect affects the macroscopic behavior of the system: in Ulam's problem the time constant increases, and for the exclusion process the flux of particles decreases. This, in particular, settles the longstanding Slow Bond Problem.

Riddhipratim Basu; Vladas Sidoravicius; Allan Sly

2014-08-18T23:59:59.000Z

487

A study of the mechanism of laser welding defects in low thermal expansion superalloy GH909  

SciTech Connect (OSTI)

In this paper, we describe experimental laser welding of low-thermal-expansion superalloy GH909. The main welding defects of GH909 by laser in the weld are liquation cracks and porosities, including hydrogen and carbon monoxide porosity. The forming mechanism of laser welding defects was investigated. This investigation was conducted using an optical microscope, scanning electron microscope, energy diffraction spectrum, X-ray diffractometer and other methodologies. The results demonstrated that porosities appearing in the central weld were related to incomplete removal of oxide film on the surface of the welding samples. The porosities produced by these bubbles were formed as a result of residual hydrogen or oxygenium in the weld. These elements failed to escape from the weld since laser welding has both a rapid welding speed and cooling rate. The emerging crack in the heat affected zone is a liquation crack and extends along the grain boundary as a result of composition segregation. Laves–Ni{sub 2}Ti phase with low melting point is a harmful phase, and the stress causes grain boundaries to liquefy, migrate and even crack. Removing the oxides on the surface of the samples before welding and carefully controlling technological parameters can reduce welding defects and improve formation of the GH909 alloy weld. - Highlights: ? It is a new process for the forming of GH909 alloy via laser welding. ? The forming mechanism of laser welding defects in GH909 has been studied. ? It may be a means to improve the efficiency of aircraft engine production.

Yan, Fei; Wang, Chunming, E-mail: yanxiangfei225@163.com; Wang, Yajun; Hu, Xiyuan; Wang, Tianjiao; Li, Jianmin; Li, Guozhu

2013-04-15T23:59:59.000Z

488

Mapping defects in a carbon nanotube by momentum transfer dependent electron energy loss spectromicroscopy  

E-Print Network [OSTI]

Mapping defects in a carbon nanotube by momentum transfer dependent electron energy loss nanotubes Electron microscopy Electron energy loss spectroscopy q-dependence Electron linear dichroism a b s t r a c t Momentum resolved electron energy loss (EELS) spectra of multi-walled carbon nanotubes

Hitchcock, Adam P.

489

Modeling a distribution of point defects as misfitting inclusions in stressed solids  

E-Print Network [OSTI]

, as in the case of solid solution strengthening, or undesirable effects, as with hydrogen embrittlement-stress limit. Key words: solute, point defect, hydrogen, inclusion, dislocation 1 Introduction Solid solutions and Physics of Solids (2014) #12;or processing, or via attack by highly permeable contaminants (e.g. hydrogen

Cai, Wei

490

Primary Radiation Defect Production in Polyethylene and Cellulose Jussi Polvi,* Petri Luukkonen, and Kai Nordlund  

E-Print Network [OSTI]

Primary Radiation Defect Production in Polyethylene and Cellulose Jussi Polvi,* Petri Luukkonen in polyethylene and cellulose were examined using molecular dynamics simulations. The governing reactions in both. Crystalline cellulose was found to be more resistant to radiation damage than crystalline polyethylene

Nordlund, Kai

491

Atomic-scale electron-beam sculpting of defect-free graphene nanostructures  

E-Print Network [OSTI]

Atomic-scale electron-beam sculpting of defect-free graphene nanostructures Bo Song, Grégory F.w.zandbergen@tudelft.nl ABSTRACT. In order to harvest the many promising properties of graphene in (electronic) applications a temperature-dependent self-repair mechanism allowing damage-free atomic-scale sculpting of graphene using

Dekker, Cees

492

Strains Induced by Point Defects in Graphene on a Metal Nils Blanc,1, 2  

E-Print Network [OSTI]

Strains Induced by Point Defects in Graphene on a Metal Nils Blanc,1, 2 Fabien Jean,1 Arkady V Strains strongly affect the properties of low-dimensional materials, such as graphene. By combin- ing-principles calculations, we show that large strains, above 2%, are present in graphene during its growth by chemical vapor

Paris-Sud XI, Université de

493

On the Computation of CMBR Anisotropies from Simulations of Topological Defects  

E-Print Network [OSTI]

Techniques for computing the CMBR anisotropy from simulations of topological defects are discussed with an eye to getting as much information from a simulation as possible. Here we consider the practical details of which sums and multiplications to do and how many terms there are.

Albert Stebbins; Scott Dodelson

1997-05-21T23:59:59.000Z

494

Defect transition energies and the density of electronic states in hydrogenated amorphous silicon  

E-Print Network [OSTI]

-Si:H. The data allow us to determine the dominant ra- diative transitions and the corresponding positionsDefect transition energies and the density of electronic states in hydrogenated amorphous silicon G of Utah, Salt Lake City, UT 84112, USA Abstract Using photoluminescence excitation (PLE) spectroscopy, we

Tolk, Norman H.

495

Nature Neuroscience Circuit level defects in the developing neocortex of fragile X mice.  

E-Print Network [OSTI]

Nature Neuroscience Circuit level defects in the developing neocortex of fragile X mice. J. Tiago correlation coefficients and firing rates in WT and in Fmr1­/­ mice. Nature Neuroscience: doi:10.1038/nn.3415 =0.005 ** p Firing rate vs. correlation coefficient P14

Cai, Long

496

Wind turbine composite blade manufacturing : the need for understanding defect origins, prevalence, implications and reliability.  

SciTech Connect (OSTI)

Renewable energy is an important element in the US strategy for mitigating our dependence on non-domestic oil. Wind energy has emerged as a viable and commercially successful renewable energy source. This is the impetus for the 20% wind energy by 2030 initiative in the US. Furthermore, wind energy is important on to enable a global economy. This is the impetus for such rapid, recent growth. Wind turbine blades are a major structural element of a wind turbine blade. Wind turbine blades have near aerospace quality demands at commodity prices; often two orders of magnitude less cost than a comparable aerospace structure. Blade failures are currently as the second most critical concern for wind turbine reliability. Early blade failures typically occur at manufacturing defects. There is a need to understand how to quantify, disposition, and mitigate manufacturing defects to protect the current wind turbine fleet, and for the future. This report is an overview of the needs, approaches, and strategies for addressing the effect of defects in wind turbine blades. The overall goal is to provide the wind turbine industry with a hierarchical procedure for addressing blade manufacturing defects relative to wind turbine reliability.

Cairns, Douglas S. (Montana State University, Bozeman, MT); Riddle, Trey (Montana State University, Bozeman, MT); Nelson, Jared (Montana State University, Bozeman, MT)

2011-02-01T23:59:59.000Z

497

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN  

E-Print Network [OSTI]

, and photodetectors have been developed, but the optical transitions in GaN:Mg are still not well under- stood.2 Mg.1007/s11664-012-2342-9 Ã? 2012 TMS #12;irradiation during growth affected the material, but the nature demonstrate point defect control in Mg-doped GaN, by UV irradiation during growth. First, details

Nabben, Reinhard

498

Salvaged castings and methods of salvaging castings with defective cast cooling bumps  

DOE Patents [OSTI]

Castings for gas turbine parts exposed on one side to a high-temperature fluid medium have cast-in bumps on an opposite cooling surface side to enhance heat transfer. Areas on the cooling surface having defectively cast bumps, i.e., missing or partially formed bumps during casting, are coated with a braze alloy and cooling enhancement material to salvage the part.

Johnson, Robert Alan (Simpsonville, SC); Schaeffer, Jon Conrad (Greenville, SC); Lee, Ching-Pang (Cincinnati, OH); Abuaf, Nesim (Lincoln City, OR); Hasz, Wayne Charles (Pownal, VT)

2002-01-01T23:59:59.000Z

499

Endoplasmic reticulum retention is a common defect associated with tyrosinase-negative albinism  

E-Print Network [OSTI]

Endoplasmic reticulum retention is a common defect associated with tyrosinase-negative albinism, March 16, 2000 (received for review February 17, 2000) Tyrosinase is a melanocyte-specific enzyme albino substitution TYR(T373K), and the temperature-sensitive tyrosinase TYR(R402Q) Tyr(H402A) found

Hebert, Daniel N.

500

Effect of Tin+ defects on electrochemical properties of highly-ordered titania  

E-Print Network [OSTI]

and photoelectrocatalysis [2­5]. However, the general conclusion is that titanium dioxide is the most promising material due band gap, e.g., of about 3.2 eV, too high to provide a good match between the adsorption of spectrum defects, such as oxygen vacancies, titanium interstitial and more complex structures, which will increase

Cao, Guozhong