Sample records for lighting ge osram

  1. STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA DEVELOPMENT...

    Broader source: Energy.gov (indexed) [DOE]

    State Lighting." In this program, Osram will explore the feasibility of new LED architecture for white light emission using thin films of nitride- based luminescent...

  2. Osram Sylvania | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup |JilinLuOpenNorthOlympia GreenThesource HistoryOsram Sylvania Jump to:

  3. OSRAM SYLVANIA Develops High-Efficiency LED Troffer Replacement

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, OSRAM SYLVANIA is developing a high-efficiency LED 2'x2' troffer replacement that is expected to be commercially available in the spring of 2012 and to be cost-competitive with existing troffers of that size. It is projected to have a light output of up to 4,000 lumens, an efficacy of more than 100 lm/W, and a CCT of 3500K.

  4. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  5. STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS

    Broader source: Energy.gov (indexed) [DOE]

    LLC (LPI). The purpose of the cooperative agreement is to develop a new white light emitting diode (LED) light source that emits 1000 lumens with an efficacy exceeding 100 lumens...

  6. CTu2J.1.pdf CLEO Technical Digest OSA 2012 Light Emission in Ge Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.1.pdf CLEO Technical Digest © OSA 2012 Light Emission in Ge Quantum Wells Edward T. Fei1 Engineering, Stanford University, Stanford, CA 94305, USA edfei@stanford.edu Abstract: We present the Ge/SiGe and electroluminescence show enhanced optical properties over bulk Ge. Further optical enhancement is observed in disk

  7. 6 GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34 October 23, 1985 YCAVR To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV...

  8. Light Stops, Light Staus and the 125 GeV Higgs

    SciTech Connect (OSTI)

    Carena, Marcela; Gori, Stefania; Shah, Nausheen R.; Wagner, Carlos E.M.; Wang, Lian-Tao

    2013-08-01T23:59:59.000Z

    The ATLAS and CMS experiments have recently announced the discovery of a Higgs-like resonance with mass close to 125 GeV. Overall, the data is consistent with a Standard Model (SM)-like Higgs boson. Such a particle may arise in the minimal supersymmetric extension of the SM with average stop masses of the order of the TeV scale and a sizable stop mixing parameter. In this article we discuss properties of the SM-like Higgs production and decay rates induced by the possible presence of light staus and light stops. Light staus can affect the decay rate of the Higgs into di-photons and, in the case of sizable left-right mixing, induce an enhancement in this production channel up to $\\sim$ 50% of the Standard Model rate. Light stops may induce sizable modifications of the Higgs gluon fusion production rate and correlated modifications to the Higgs diphoton decay. Departures from SM values of the bottom-quark and tau-lepton couplings to the Higgs can be obtained due to Higgs mixing effects triggered by light third generation scalar superpartners. We describe the phenomenological implications of light staus on searches for light stops and non-standard Higgs bosons. Finally, we discuss the current status of the search for light staus produced in association with sneutrinos, in final states containing a $W$ gauge boson and a pair of $\\tau$s.

  9. Smart Lighting ERC Industrial Speaker Series

    E-Print Network [OSTI]

    LĆ¼, James Jian-Qiang

    . Stough Director of Solid State Lighting Research Osram Sylvania Abstract: For the past five years or so fixture, etc.), and present problems for the Lighting Company trying to implement LED-based lighting them as the next `filament." Bio: Dr. Matthew Stough is the director of research in Solid-State

  10. Room temperature 1.6 m electroluminescence from Ge light emitting diode on Si substrate

    E-Print Network [OSTI]

    Vuckovic, Jelena

    Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate Szu n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device.4670) Optical materials; (230.3670) Light-emitting diodes. References and links 1. L. C. Kimerling, "Silicon

  11. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes

    E-Print Network [OSTI]

    Sun, Xiaochen

    We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to ...

  12. GE Lighting Solutions: Proposed Penalty (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S.

  13. GE Lighting Solutions: Noncompliance Determination (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards.

  14. Light-Induced Frequency Shift in Chemical Spirals Valery Petrov, Qi Ouyang, Ge Li, and Harry L. Swinney*

    E-Print Network [OSTI]

    Texas at Austin. University of

    Light-Induced Frequency Shift in Chemical Spirals Valery Petrov, Qi Ouyang, Ge Li, and Harry L-Tyson relation for the spirals, D /3k2 , is independent of light intensity (D ) 2.5 × 10-6 cm2 /s). Introduction The light-sensitive Belousov-Zhabotinsky (BZ) reaction with a ruthenium-based catalyst is a convenient

  15. Jitter Studies for a 2.4 GeV Light Source Accelerator Using LiTrack

    E-Print Network [OSTI]

    Penn, Gregory E

    2010-01-01T23:59:59.000Z

    S2E simulations on jitter for European XFEL project,”Jitter Studies for a 2.4 GeV Light Source Accelerator Usingpeak current, and energy chirp. Jitter in average energy is

  16. A Spin-Light Polarimeter for Multi-GeV Longitudinally Polarized Electron Beams

    SciTech Connect (OSTI)

    Mohanmurthy, Prajwal [Mississippi State University, Starkville, MS (United States); Dutta, Dipangkar [Mississippi State University, Starkville, MS (United States) and Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

    2014-02-01T23:59:59.000Z

    The physics program at the upgraded Jefferson Lab (JLab) and the physics program envisioned for the proposed electron-ion collider (EIC) include large efforts to search for interactions beyond the Standard Model (SM) using parity violation in electroweak interactions. These experiments require precision electron polarimetry with an uncertainty of < 0.5 %. The spin dependent Synchrotron radiation, called "spin-light," can be used to monitor the electron beam polarization. In this article we develop a conceptual design for a "spin-light" polarimeter that can be used at a high intensity, multi-GeV electron accelerator. We have also built a Geant4 based simulation for a prototype device and report some of the results from these simulations.

  17. Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrates

    SciTech Connect (OSTI)

    Kwon, O.; Boeckl, J.; Lee, M.L.; Pitera, A.J.; Fitzgerald, E.A.; Ringel, S.A. [Department of Electrical Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Department of Electrical and Computer Engineering, Ohio State University, 2015 Neil Avenue, Columbus, Ohio 43210 (United States)

    2005-02-01T23:59:59.000Z

    Visible AlGaInP resonant cavity light emitting diodes (RCLEDs) were grown by molecular beam epitaxy and fabricated on low-dislocation density, SiGe/Si metamorphic substrates. A comparison with identical devices grown on GaAs and Ge substrates shows that not only did the RCLED device structure successfully transfer to the SiGe/Si substrate, but also a higher optical output power was obtained. This result is attributed to enhanced lateral current spreading by the low residual dislocation density ({approx}1x10{sup 6} cm{sup -2}) network within the virtual Ge substrate and the superior thermal conductivity of the underlying Si wafer. In addition, the growth of an AlGaAs current spreading layer and a modified top metal contact were incorporated in the RCLED on SiGe to optimize device performance. The measured electroluminescent output power was 166 {mu}W at a 665 nm peak wavelength under 500 mA current injection. Extremely narrow electroluminescence linewidths were achieved with a full width half maximum value of 3.63 nm under 50 mA current injection. These results demonstrate great promise for the monolithic integration of visible band optical sources with Si-based electronic circuitry.

  18. Light Nuclides Produced in the Proton-Induced Spallation of 238U at 1 GeV

    E-Print Network [OSTI]

    M. V. Ricciardi; P. Armbruster; J. Benlliure; M. Bernas; A. Boudard; S. Czajkowski; T. Enqvist; A. Kelic; S. Leray; R. Legrain; B. Mustapha; J. Pereira; F. Rejmund; K. -H. Schmidt; C. Stephan; L. Tassan-Got; C. Volant; O. Yordanov

    2005-08-24T23:59:59.000Z

    The production of light and intermediate-mass nuclides formed in the reaction 1H+238U at 1 GeV was measured at the Fragment Separator (FRS) at GSI, Darmstadt. The experiment was performed in inverse kinematics, shooting a 1 A GeV 238U beam on a thin liquid-hydrogen target. 254 isotopes of all elements in the range from Z=7 to Z=37 were unambiguously identified, and the velocity distributions of the produced nuclides were determined with high precision. The results show that the nuclides are produced in a very asymmetric binary decay of heavy nuclei originating from the spallation of uranium. All the features of the produced nuclides merge with the characteristics of the fission products as their mass increases.

  19. Light NMSSM Neutralino Dark Matter in the Wake of CDMS II and a 126 GeV Higgs

    E-Print Network [OSTI]

    Kozaczuk, Jonathan

    2013-01-01T23:59:59.000Z

    Recent results from the Cryogenic Dark Matter Search (CDMS) experiment have renewed interest in light dark matter with a large spin-independent neutralino-nucleon scattering cross-section. Here, we examine the regions of the NMSSM capable of producing a light neutralino with a large direct detection cross-section, with scattering mediated by a light singlet-like scalar, and a 126 GeV Higgs consistent with the LHC results. We focus on two different scenarios for annihilation in the early universe, namely annihilation mediated by (1) a light scalar or by (2) a light pseudoscalar. We find that there exists viable parameter space in which a very light CP-even Higgs boson mediates both the neutralino-nucleon spin-independent elastic scattering and the neutralino pair-annihilation in the early universe. These regions can feature significant tree-level contributions to the SM-like Higgs mass and hence not require very heavy or highly-mixed stops. The strongest constraints in this case come from the decays of the SM-...

  20. Light harvesting with Ge quantum dots embedded in SiO{sub 2} or Si{sub 3}N{sub 4}

    SciTech Connect (OSTI)

    Cosentino, Salvatore, E-mail: Salvatore.cosentino@ct.infn.it; Raciti, Rosario; Simone, Francesca; Crupi, Isodiana; Terrasi, Antonio; Mirabella, Salvo [MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universitą di Catania, via S. Sofia 64, 95123 Catania (Italy); Sungur Ozen, Emel; Aydinli, Atilla [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Mio, Antonio M.; Nicotra, Giuseppe [IMM-CNR, VII strada 5, 95121 Catania (Italy); Turan, Rasit [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey)

    2014-01-28T23:59:59.000Z

    Germanium quantum dots (QDs) embedded in SiO{sub 2} or in Si{sub 3}N{sub 4} have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850?°C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 3–9?nm range in the SiO{sub 2} matrix, or in the 1–2?nm range in the Si{sub 3}N{sub 4} matrix, as measured by transmission electron microscopy. Thus, Si{sub 3}N{sub 4} matrix hosts Ge QDs at higher density and more closely spaced than SiO{sub 2} matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si{sub 3}N{sub 4} matrix in comparison with those in the SiO{sub 2} host. Light absorption by Ge QDs is shown to be more effective in Si{sub 3}N{sub 4} matrix, due to the optical bandgap (0.9–1.6?eV) being lower than in SiO{sub 2} matrix (1.2–2.2?eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si{sub 3}N{sub 4} matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices.

  1. 'Self-absorbed' GeV light curves of gamma-ray burst afterglows

    SciTech Connect (OSTI)

    Panaitescu, A.; Vestrand, W. T.; Wo?niak, P. [Space and Remote Sensing, MS B244, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2014-06-10T23:59:59.000Z

    We investigate the effect that the absorption of high-energy (above 100 MeV) photons produced in gamma-ray burst afterglow shocks has on the light curves and spectra of Fermi Large Area Telescope (LAT) afterglows. Afterglows produced by the interaction of a relativistic outflow with a wind-like medium peak when the blast wave deceleration sets in, and the afterglow spectrum could be hardening before that peak, as the optical thickness to pair formation is decreasing. In contrast, in afterglows produced in the interaction with a homogeneous medium, the optical thickness to pair formation should increase and yield a light curve peak when it reaches unity, followed by a fast light curve decay, accompanied by spectral softening. If energy is injected in the blast wave, then the accelerated increase of the optical thickness yields a convex afterglow light curve. Other features, such as a double-peak light curve or a broad hump, can arise from the evolution of the optical thickness to photon-photon absorption. Fast decays and convex light curves are seen in a few LAT afterglows, but the expected spectral softening is rarely seen in (and difficult to measure with) LAT observations. Furthermore, for the effects of photon-photon attenuation to shape the high-energy afterglow light curve without attenuating it too much, the ejecta initial Lorentz factor must be in a relatively narrow range (50-200), which reduces the chance of observing those effects.

  2. GeV-TeV gamma-ray light curves expected in the IC electron-positron pair cascade model for massive binaries: Application to LS 5039

    E-Print Network [OSTI]

    W. Bednarek

    2006-11-09T23:59:59.000Z

    TeV gamma-ray emission from two massive binaries of the microquasar type, LS 5039 and LS I +61$^{\\rm o}$ 303, show clear variability with their orbital periods. Our purpose is to calculate the GeV and TeV $\\gamma$-ray light curves from the massive binary LS 5039 which are expected in the specific Inverse Compton $e^\\pm$ pair cascade model. This model successfully predicted the basic features of the high energy $\\gamma$-ray emission from LS 5039 and LS I +61 303. In the calculations we apply the Monte Carlo code which follows the IC $e^\\pm$ pair cascade in the anisotropic radiation of the massive star. The $\\gamma$-ray light curves and spectra are obtained for different parameters of the acceleration scenario and the inclination angles of the binary system. It is found that the GeV and TeV $\\gamma$-ray light curves should be anti-correlated. This feature can be tested in the near future by the simultaneous observations of LS 5039 with the AGILE and GLAST telescopes in GeV energies and the Cherenkov telescopes in the TeV energies. Considered model also predicts a broad maximum in the TeV $\\gamma$-ray light curve between the phases $\\sim 0.4-0.8$ consistently with the observations of LS 5039 by the HESS telescopes. Moreover, we predict additional dip in the TeV light curve for large inclination angles $\\sim 60^{\\rm o}$. This feature could serve as a diagnostic for independent measuring of the inclination angle of this binary system indicating also on the presence of a neutron star in LS 5039.

  3. Slideshow: Flipping the Switch on LED Lighting for the National...

    Broader source: Energy.gov (indexed) [DOE]

    President & CEO, OSRAM SYLVANIA - Eric Spiegel, President and Chief Executive Officer, Siemens Corporation & CEO, U.S. Region - Interior Department Secretary Ken Salazar - Joseph...

  4. Electric polarizabilities of Ge(CH{sub 3}){sub 4} from collision-induced light-scattering experiments and ab initio calculations

    SciTech Connect (OSTI)

    Maroulis, G.; Hohm, Uwe [Department of Chemistry, University of Patras, GR-26500 Patras (Greece); Institut fuer Physikalische und Theoretische Chemie der Technischen, Universitaet Braunschweig, Hans-Sommer-Strasse 10, D-38106 Braunschweig (Germany)

    2007-09-15T23:59:59.000Z

    The dipole-quadrupole and dipole-octopole polarizabilities A and E of Ge(CH{sub 3}){sub 4} have been determined from collision-induced light-scattering experiments and ab initio calculations. Our experimental results are |A|/e{sup 2}a{sub 0}{sup 3}E{sub h}{sup -1}<143 and |E|/e{sup 2}a{sub 0}{sup 4}E{sub h}{sup -1}<545. Our best theoretical values are A=45.48 and E=-389.9, respectively. The calculated value for the dipole polarizability is {alpha}/e{sup 2}a{sub 0}{sup 2}E{sub h}{sup -1}=83.26, in fine accord with our static experimental estimate of 83.2. We present a detailed discussion of the level of agreement between experiment and theory.

  5. Study of Pu consumption in Advanced Light Water Reactors. Evaluation of GE Advanced Boiling Water Reactor plants

    SciTech Connect (OSTI)

    Not Available

    1993-05-13T23:59:59.000Z

    Timely disposal of the weapons plutonium is of paramount importance to permanently safeguarding this material. GE`s 1300 MWe Advanced Boiling Water Reactor (ABWR) has been designed to utilize fill] core loading of mixed uranium-plutonium oxide fuel. Because of its large core size, a single ABWR reactor is capable of disposing 100 metric tons of plutonium within 15 years of project inception in the spiking mode. The same amount of material could be disposed of in 25 years after the start of the project as spent fuel, again using a single reactor, while operating at 75 percent capacity factor. In either case, the design permits reuse of the stored spent fuel assemblies for electrical energy generation for the remaining life of the plant for another 40 years. Up to 40 percent of the initial plutonium can also be completely destroyed using ABWRS, without reprocessing, either by utilizing six ABWRs over 25 years or by expanding the disposition time to 60 years, the design life of the plants and using two ABWRS. More complete destruction would require the development and testing of a plutonium-base fuel with a non-fertile matrix for an ABWR or use of an Advanced Liquid Metal Reactor (ALMR). The ABWR, in addition, is fully capable of meeting the tritium target production goals with already developed target technology.

  6. Formation of Light Isotopes by Protons and Deuterons of 3.65 GeV/nucleon on Separated Tin Isotopes

    E-Print Network [OSTI]

    A. R. Balabekyan; A. S. Danagulyan; J. R. Drnoyan; G. H. Hovhannisyan; J. Adam; V. G. Kalinnikov; M. I. Krivopustov; V. S. Pronskikh; V. I. Stegailov; A. A. Solnyshkin; P. Chaloun; V. M. Tsoupko-Sitnikov; S. G. Mashnik; K. K. Gudima

    2005-06-22T23:59:59.000Z

    We measure cross sections for residual nuclide formation in the mass range 6 tin isotopes (112-Sn, 118-Sn, 120-Sn, 124-Sn). The experimental data are compared with calculations by the codes FLUKA, LAHET, CEM03, and LAQGSM03. Scaling behavior is observed for the whole mass region of residual nuclei, showing a possible multifragmentation mechanism for the formation of light products (6 < A < 31). Our analysis of the isoscaling dependence also shows a possible contribution of multifragmentation to the production of heavier nuclides, in the mass region 39 < A < 81.

  7. Phenomenology of a very light scalar (100 MeV $GeV) mixing with the SM Higgs

    E-Print Network [OSTI]

    Jackson D. Clarke; Robert Foot; Raymond R. Volkas

    2014-03-02T23:59:59.000Z

    In this paper we investigate the phenomenology of a very light scalar, $h$, with mass 100 MeV $GeV, mixing with the SM Higgs. As a benchmark model we take the real singlet scalar extension of the SM. We point out apparently unresolved uncertainties in the branching ratios and lifetime of $h$ in a crucial region of parameter space for LHC phenomenology. Bounds from LEP, meson decays and fixed target experiments are reviewed. We also examine prospects at the LHC. For $m_h \\lesssim m_B$ the dominant production mechanism is via meson decay; our main result is the calculation of the differential $p_T$ spectrum of $h$ scalars originating from B mesons and the subsequent prediction of up to thousands of moderate (triggerable) $p_T$ displaced dimuons possibly hiding in the existing dataset at ATLAS/CMS or at LHCb. We also demonstrate that the subdominant $Vh$ production channel has the best sensitivity for $m_h \\gtrsim m_B$ and that future bounds in this region could conceivably compete with those of LEP.

  8. Embodied Energy and Off-Grid Lighting

    E-Print Network [OSTI]

    Alstone, Peter

    2012-01-01T23:59:59.000Z

    Fluorescent Lamps, and LED Lamps. Published by Osram Optothe embodied energy of the LED lamp was “paid for” in onlyof manufacture for an LED lamp powered by a ¼ watt solar

  9. Municipal Consortium LED Street Lighting Workshop Presentations...

    Broader source: Energy.gov (indexed) [DOE]

    A Rational View of LM-79 Reports, IES Files, and Product Variation Gary Steinberg, GE Lighting Solutions Solid-State Street Lighting: Calculating Light Loss Factors Dana Beckwith,...

  10. Lighting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5Let us countLighting Sign In About | Careers |

  11. Study of Pu consumption in advanced light water reactors: Evaluation of GE advanced boiling water reactor plants - compilation of Phase 1B task reports

    SciTech Connect (OSTI)

    NONE

    1993-09-15T23:59:59.000Z

    This report contains an extensive evaluation of GE advanced boiling water reactor plants prepared for United State Department of Energy. The general areas covered in this report are: core and system performance; fuel cycle; infrastructure and deployment; and safety and environmental approval.

  12. LED Market Intelligence Report

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    early adopters of LED technologies, particularly around dimming capabilities. 16 LED Market Intelligence Report Home Depot Walmart Cree Philips TCP GE LSG Osram Feit Costco...

  13. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01T23:59:59.000Z

    Claeys, et al. , "Si versus Ge for future microelectronics,"in Selectively Doped Si/Si x Ge 1-x Superlattices," PhysicalA. Fitzgerald, et al. , "Relaxed Ge x Si 1-x structures for

  14. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01T23:59:59.000Z

    High-electron-mobility Si/SiGe heterostructures: influenceof the relaxed SiGe buffer layer," Semiconductor Science andFrom its discovery to SiGe devices," Materials Science in

  15. Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

    E-Print Network [OSTI]

    Zhengping Jiang; Neerav Kharche; Timothy Boykin; Gerhard Klimeck

    2012-03-06T23:59:59.000Z

    A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

  16. Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

    E-Print Network [OSTI]

    Jiang, Zhengping; Boykin, Timothy; Klimeck, Gerhard

    2011-01-01T23:59:59.000Z

    A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

  17. STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA FOR AN...

    Broader source: Energy.gov (indexed) [DOE]

    similar to a frosted incandescent bulb. Use of the ceramic enables the size of the remote phosphor to be minimized while maintaining a sufficient thermal path for...

  18. Workplace Charging Challenge Partner: OSRAM SYLVANIA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: SinceDevelopment | DepartmentDepartment of Energy Lewis & ClarkNetApp

  19. Smart Street Lights | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del Sol HomeFacebookScholarship Fund3Biology| National NuclearWind

  20. Advanced Lighting Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  1. ecent developments in molecular beam epitaxial growth of group IV semiconductors devices has led to a renewed interest in SiGe heterostructures. This effort is motivated

    E-Print Network [OSTI]

    Abbondandolo, Alberto

    to a renewed interest in SiGe heterostructures. This effort is motivated Rmainly by the goal of integrating Valence and conduction band dispersion around the Gpoint of a double Si/Ge QW system grown on cubic Si. Ge originate from the splitting of the Ge confined light hole bands. Electronic states of Si-Ge based

  2. CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GE 210 MATH 223CE 212 CMPT 116 Hum/SocSci Jr. GEOE 218 CE 225 MATH 224GE 213# GE 348# CE 295 English 11x# CE 315 CE 311 CE 318 CE 319 CE 317 CE 316CE 327 CE 321 Sr Sci elect#CE 329 CE 328 GE 300# Eng/Sr Sci Elec# CE Elec

  3. Tailoring the spin polarization in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario [LNESS-Dipartimento di Scienza dei Materiali, Universitą degli Studi di Milano-Bicocca, I-20125 Milano (Italy); Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni [LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy); Trivedi, Dhara; Song, Yang [Department of Physics and Astronomy, University of Rochester, Rochester (United States); Li, Pengki [Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States); Dery, Hanan [Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)

    2013-12-04T23:59:59.000Z

    We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

  4. High-Speed Network Enables Industrial Internet | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light...

  5. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 Hum/SocSci Jr. MATH 224 English 11x CHE 220CHE 210 CHECHE 413 Grp. B elective#* Grp. B elective*#CHE 424 CHE 421 CHE 422 GE 348# CHE 423 GE 449# CH E 470

  6. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 HSS@# MATH 224 English 11x CHE 220CHE 210 CHE 323 CHE Grp. B elective#* Grp. B elective*#CHE 424 CHE 421 CHE 422 GE 348# CHE 423 GE 449# CH E 470^ Chemical

  7. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 ME 227 GE 213# MATH 223 EE 201ME 214 CMPT 116 ME 215 GE 226 MATH 224 Hum/SocSci@# ME 251 ME 229 ME 318 ME 335 ME 313 ME 316 ME 352ME 330 GE 348# ME 328 ME 327 ME 323 ME 321ME 324 RCM 300# ME 418 ME 417 ME 450 ME 431

  8. GE ?????????????????4G?????...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE 4G Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click...

  9. GE Healthcare Introduction

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare Introduction HR 16 columns are designed for high resolution liquid chromatography your local GE Healthcare office. System compatibility HR 16 columns are designed to be used with ÄKTATM. Wash the parts thoroughly in distilled water. 4. Reassemble the column (see Assembling the column above

  10. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology...

  11. GE Global Research Locations | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMFormsGasReleaseSpeechesHall ATours,Dioxide and MethaneLocations GE

  12. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbell is theOpportunitiesTheGAOHome >About GE

  13. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.Newof EnergyFunding OpportunityF G F ! ( ! ( ! ( !ProgressGE

  14. Spin-polarized photoemission from SiGe heterostructures

    SciTech Connect (OSTI)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04T23:59:59.000Z

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  15. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28T23:59:59.000Z

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150?°C for 1?h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301?kJ·mol{sup ?1}) are greater than that of Ge-Ge bonds (264?kJ·mol{sup ?1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  16. Thermoelectric properties of nanoporous Ge

    E-Print Network [OSTI]

    Lee, Joo-Hyoung

    We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant ...

  17. GE Anna Heijbel / The Storm

    E-Print Network [OSTI]

    Tian, Weidong

    1 / GE Anna Heijbel / The Storm® Confocal Optics 50, 100, 200 µm 5 IQTL · ·DNA ·DNA Gels, blots, tissue sections (not in situ), radio-TLC & X-Ray diffraction #12;2 / GE Anna Heijbel / Phosphor µm 1010 43 x 35 cm43 x 35 cm Scanning Technology #12;3 / GE Anna Heijbel / Confocal Optics PMTPMT

  18. The Advanced Light Source

    SciTech Connect (OSTI)

    Jackson, A.

    1991-05-01T23:59:59.000Z

    The Advanced Light Source (ALS), a national user facility currently under construction at the Lawrence Berkeley Laboratory (LBL), is a third-generation synchrotron light source designed to produce extremely bright beams of synchrotron radiation in the energy range from a few eV to 10 keV. The design is based on a 1--1.9-GeV electron storage ring (optimized at 1.5 GeV), and utilizes special magnets, known as undulators and wigglers (collectively referred to as insertion devices), to generate the radiation. The facility is scheduled to begin operating in April 1993. In this paper we describe the progress in the design, construction, and commissioning of the accelerator systems, insertion devices, and beamlines. Companion presentations at this conference give more detail of specific components in the ALS, and describe the activities towards establishing an exciting user program. 3 figs., 2 tabs.

  19. GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

    SciTech Connect (OSTI)

    Tseng, H. H.; Li, H.; Mashanov, V.; Yang, Y. J.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Chang, G. E. [Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, Chiayi County 62102, Taiwan (China)] [Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, Chiayi County 62102, Taiwan (China); Soref, R. A.; Sun, G. [Department of Physics, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)] [Department of Physics, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)

    2013-12-02T23:59:59.000Z

    We report an investigation of GeSn-based p-i-n photodiodes with an active GeSn layer that is almost fully strained. The results show that (a) the response of the Ge/GeSn/Ge heterojunction photodiodes is stronger than that of the reference Ge-based photodiodes at photon energies above the 0.8 eV direct bandgap of bulk Ge (<1.55??m), and (b) the optical response extends to lower energy regions (1.55–1.80??m wavelengths) as characterized by the strained GeSn bandgap. A cusp-like spectral characteristic is observed for samples with high Sn contents, which is attributed to the significant strain-induced energy splitting of heavy and light hole bands. This work represents a step forward in developing GeSn-based infrared photodetectors.

  20. HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping of Ocular Dominance Columns

    E-Print Network [OSTI]

    HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping these techniques in humans. Previous human studies (4-6) instead used the conventional GE BOLD technique, combined and limitations of GE BOLD differential mapping as compared to HSE BOLD differential mapping of ocular dominance

  1. Characteristics of Sn segregation in Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Li, H.; Chang, C.; Chen, T. P.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shi, Z. W.; Chen, H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-10-13T23:59:59.000Z

    We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

  2. CTu2J.4.pdf CLEO Technical Digest OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.4.pdf CLEO Technical Digest © OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 µm thick silicon. Introduction and motivation Ge and especially Ge/SiGe quantum wells exhibit strong electroabsorption (Franz

  3. GE Wins Manufacturing Leadership Award |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    secured software platform that delivers data and visualizations to all major artificial lift functions at GE Oil & Gas. Several analytic modules were built to extract meaningful...

  4. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Academia Partner on Microgrid Project GE Awarded a 1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events...

  5. GE, Aavid Commercialize Dual Cool Jets Technology | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    market. GE's broad array of industrial businesses requires highly advanced and reliable electronics that are increasingly driving the need for advanced cooling solutions to...

  6. GE, University of Washington Disease Detection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    excited about this team's unique ability to combine new designs for paper-based microfluidics with new nucleic amplification methods and GE's novel paper chemistries to help...

  7. The GE Store

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over Our InstagramStructureProposedPAGESafetyTed5,AuditThe FiveBiofuelsGE Store for

  8. GE Healthcare Product Guide 2007

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare BioProcess Product Guide 2007 #12;How to contact us Europe www.gehealthcare.com/bioprocess or by phone (T), fax (F), and Email Austria T: +43 1 57 606 1613 F: +43 1 57 606 1614 Email: cust.orderde@ge.com Belgium T: 0800 73890 F: 02 416 8206 Email: order.bnl@ge.com Central and East Europe (Austria) T: +43 1

  9. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    temperature," said Frank Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. Developed over the past decade, these new magnetocaloric...

  10. Sneaky light stop

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Eifert, Till; Nachman, Benjamin

    2015-04-01T23:59:59.000Z

    A light supersymmetric top quark partner (stop) with a mass nearly degenerate with that of the standard model (SM) top quark can evade direct searches. The precise measurement of SM top properties such as the cross-section has been suggested to give a handle for this ‘stealth stop’ scenario. We present an estimate of the potential impact a light stop may have on top quark mass measurements. The results indicate that certain light stop models may induce a bias of up to a few GeV, and that this effect can hide the shift in, and hence sensitivity from, cross-section measurements. Duemore »to the different initial states, the size of the bias is slightly different between the LHC and the Tevatron. The studies make some simplifying assumptions for the top quark measurement technique, and are based on truth-level samples.« less

  11. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menéndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Aoki, Toshihiro [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)

    2014-10-07T23:59:59.000Z

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1–y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1–y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1–y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1–y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1–y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1–y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1–x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

  12. Serial and parallel Si, Ge, and SiGe direct-write with scanning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting...

  13. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 Hum/SocSci Jr. GEOE 315 GEOE 475 Grp C Elec.# GE 348#CE 318 CE 319 ENG 11X# GEOL 463 or Grp B Elec.# GEOL 226 GE 300# CE 316

  14. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2005-2006 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 BusSci/HSS# GEOE 315 GEOE 475 Grp C Elec.# GE 348#CE 318 CE 319 ENG 11X# GEOL 463 or Grp B Elec.# GEOL 226 GE 300# CE 316 Grp

  15. Low-voltage broad-band electroabsorption from thin Ge/SiGe

    E-Print Network [OSTI]

    Miller, David A. B.

    Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using

  16. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on is presented, with a detailed discussion of wafer bonding approaches for strained Si, SiGe, and Ge on

  17. GE, Berkeley Energy Storage for Electric Vehicles | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Just Add Water: GE, Berkeley Lab Explore Possible Key to Energy Storage for Electric Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  18. Cold Spray and GE Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    difference of the work done at GE Global Research is the development of cold spray for additive manufacturing, where we adapt this novel coating process to build 3D shapes....

  19. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  20. Joining GE Global Research Thermal Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Alps. With more than 16 years working as an aerospace engineer in the development of gas turbine jet engines, I had GE on my radar screen right from the beginning when I was...

  1. Uniaxially stressed Ge:Ga and Ge:Be

    SciTech Connect (OSTI)

    Dubon, O.D. Jr.

    1992-12-01T23:59:59.000Z

    The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

  2. Smart lighting: New Roles for Light

    E-Print Network [OSTI]

    Salama, Khaled

    Smart lighting: New Roles for Light in the Solid State Lighting World Robert F. Karlicek, Jr. Director, Smart Lighting Engineering Research Center Professor, Electrical, Systems and Computer Lighting · What is Smart Lighting · Technology Barriers to Smart Lighting · Visible Light Communications

  3. Commercial Lighting

    Broader source: Energy.gov [DOE]

    Commercial lighting accounts for more than 20 percent of total commercial building energy use. The Energy Department works to reduce lighting energy use through research and deployment.

  4. GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurTheBrookhaven NationalRegionalsResearch Ā»Funding Opportunity

  5. Recommended GE Curriculum for the BSEE Majors

    E-Print Network [OSTI]

    Ravikumar, B.

    Recommended GE Curriculum for the BSEE Majors Area Subjects Suggested GE Courses Courses Actual units GE Units A. Communication and Critical Thinking (9) A.2. Fund. of Communication ENGL 101 4 4 A.3, Theatre, Dance and Music and Film Select from the GE C.1 list in the SSU Catalog 3 3 C.2. Literature

  6. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    Ge­Si intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of Si­Ge intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  7. Nonlithographic epitaxial SnxGe1x dense nanowire arrays grown on Ge,,001...

    E-Print Network [OSTI]

    Atwater, Harry

    Nonlithographic epitaxial SnxGe1Ąx dense nanowire arrays grown on Ge,,001... Regina Ragan-thick SnxGe1 x /Ge(001) epitaxial films with 0 x 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1 x nanowires oriented along 001 , as confirmed by composition contrast

  8. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

    SciTech Connect (OSTI)

    Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2013-11-15T23:59:59.000Z

    The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

  9. New Efficiency Record Achieved for White OLED Device

    Broader source: Energy.gov [DOE]

    Osram Opto-Semiconductors, Inc. has successfully demonstrated a white organic light emitting diode (OLED) with a record efficiency of 25 lumens per watt, the highest known efficiency achieved to date for a polymer-based white OLED. The 25 LPW cool-white-emitting device was produced by applying a standard external inorganic phosphor to Osram's record-breaking blue-emitting phosphorescent polymer device with a peak luminous efficacy of 14 LPW.

  10. Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser

    E-Print Network [OSTI]

    Nam, Donguk; Cheng, Szu-Lin; Roy, Arunanshu; Huang, Kevin Chih-Yao; Brongersma, Mark; Nishi, Yoshio; Saraswat, Krishna

    2012-01-01T23:59:59.000Z

    We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and FDTD simulations, we discuss the implications for highly efficient Ge lasers.

  11. Light Properties Light travels at the speed of light `c'

    E-Print Network [OSTI]

    Mojzsis, Stephen J.

    LIGHT!! #12;Light Properties Light travels at the speed of light `c' C = 3 x 108 m/s Or 190,000 miles/second!! Light could travel around the world about 8 times in one second #12;What is light?? Light is a "wave packet" A photon is a "light particle" #12;Electromagnetic Radiation and You Light is sometimes

  12. Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1,

    E-Print Network [OSTI]

    Coppersmith, Susan N.

    Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1, * Sucismita Chutia,1 Charles an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting interface, with characteristic energy splittings of order 0.1­1 meV for the case of SiGe/Si/SiGe quantum

  13. Direct band gap optical emission from compressively strained Ge films grown on relaxed Si{sub 0.5}Ge{sub 0.5} substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)] [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2013-10-14T23:59:59.000Z

    Compressively strained Ge films have been grown on relaxed Si{sub 0.5}Ge{sub 0.5} virtual substrate in ultra high vacuum using molecular beam epitaxy. Structural characterization has shown that the Ge films are compressively strained with partial strain relaxation in a film thicker than 3.0 nm, due to onset of island nucleation. Photoluminescence spectra exhibit the splitting of degenerate Ge valence band into heavy hole and light hole bands with a broad direct band gap emission peak around 0.81 eV. Temperature and excitation power dependent emission characteristics have been studied to investigate the mechanism of luminescence quenching at high temperatures and the role of non-radiative recombination centers.

  14. Rolling up SiGe on insulator

    SciTech Connect (OSTI)

    Cavallo, F.; Songmuang, R.; Ulrich, C.; Schmidt, O. G. [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)

    2007-05-07T23:59:59.000Z

    SiGe on insulator films of 10-50 nm thickness are fabricated by Ge condensation applying different oxidation times. The layers are released from the substrate by selectively etching the insulator film. Due to the varying Ge composition, the layers bend downward toward the substrate surface and roll up into microtubes. Depending on the Ge condensation, the strain distribution in the SiGe layers varies and allows a scaling of the tube diameters between 1 and 4 {mu}m. Assuming pseudomorphic SiGe layers, the tube diameters are smaller than expected from continuum mechanical theory. This suggests the occurrence of additional strain in the oxidized films.

  15. Smart Lighting Controller!! Smart lighting!

    E-Print Network [OSTI]

    Anderson, Betty Lise

    1! Smart Lighting Controller!! #12;2! Smart lighting! No need to spend energy lighting the room if://blogs.stthomas.edu/realestate/2011/01/24/residential-real-estate-professionals-how-do-you- develop feedback! There is a connection between the output and the input! Therefore forces inputs to same voltage

  16. Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

    SciTech Connect (OSTI)

    Drichko, I. L.; Diakonov, A. M.; Lebedeva, E. V.; Smirnov, I. Yu. [A. F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Mironov, O. A. [Warwick SEMINANO R and D Centre, University of Warwick Science Park, Coventry CV4 7EZ (United Kingdom); Kummer, M.; Kaenel, H. von [Laboratorium fuer Festkoerperphysik ETH Zuerich, CH-8093 Zuerich (Switzerland); EpiSpeed SA, Technoparkstrasse 1, CH-8005 Zuerich (Switzerland)

    2009-11-01T23:59:59.000Z

    Measurement results of the acoustoelectric effects [surface acoustic waves (SAW) attenuation and velocity] in a high-mobility p-SiGe/Ge/SiGe structure are presented. The structure was low-energy plasma-enhanced chemical vapor deposition grown with a two-dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5-4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time tau{sub e}psilon and the deformation potential constant determined.

  17. PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON

    E-Print Network [OSTI]

    Kundu, Debasis

    PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON LIKELIHOOD RATIO proposes the use of likelihood ratio statistic in choosing between gamma and GE models or between Weibull and GE models. Probability of correct selec- tions are obtained using Monte Carlo simulations for various

  18. Cerenkov Light

    ScienceCinema (OSTI)

    Slifer, Karl

    2014-05-22T23:59:59.000Z

    The bright blue glow from nuclear reactors is Cerenkov light. Karl Slifer describes how nuclear physicists can use this phenomenon to study the nucleus of the atom.

  19. Cerenkov Light

    SciTech Connect (OSTI)

    Slifer, Karl

    2013-06-13T23:59:59.000Z

    The bright blue glow from nuclear reactors is Cerenkov light. Karl Slifer describes how nuclear physicists can use this phenomenon to study the nucleus of the atom.

  20. Lighting Renovations

    Broader source: Energy.gov [DOE]

    When undertaking a lighting renovation in a Federal building, daylighting is the primary renewable energy opportunity. Photovoltaics (PV) also present an excellent opportunity. While this guide...

  1. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    SciTech Connect (OSTI)

    Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-08-11T23:59:59.000Z

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  2. SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication

    E-Print Network [OSTI]

    SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication Zhiyuan Cheng, E. A. Fitzgerald, and D with less defects in SiGe film, but the SiGe film uniformity is inferior. "Smart-cut" approach has better control on the SiGe film thickness and uniformity, and is applicable to wider Ge content range of the SiGe

  3. About GE Global Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMForms About Become agovEducationWelcome toAboutAbout GE Global Research

  4. Heat Transfer in GE Jet Engines | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cn SunnybankD.jpgHanfordDepartment ofHeat Transfer in GE Jet Engines Click to

  5. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15T23:59:59.000Z

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  6. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    SciTech Connect (OSTI)

    Liu, Zhi; Li, Yaming; He, Chao; Li, Chuanbo; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen, E-mail: cbw@semi.ac.cn; Wang, Qiming [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-05-12T23:59:59.000Z

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n{sup ?}-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N{sup +} region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.

  7. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWP TWP Related LinksATHENAAdministrative80-AA (01-2015)GE

  8. GeV emission from Gamma-Ray Burst afterglows

    E-Print Network [OSTI]

    A. Panaitescu

    2008-01-10T23:59:59.000Z

    We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

  9. Thermal Imaging Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enables Advanced Thermal Imaging An error occurred. Unable to execute Javascript. Bryan Whalen in the Electronics Cooling Lab at GE Global Research recorded this thermo...

  10. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28T23:59:59.000Z

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.3–0.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  11. Limited-area growth of Ge and SiGe on Si

    E-Print Network [OSTI]

    Kim, Meekyung, Ph. D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    The goal of this thesis is to develop and understand processing conditions that improve the surface morphology and reduce the dislocation density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low ...

  12. SiGe/sSi quantum dot electron spin decoherence dependence on $^{73}$Ge

    E-Print Network [OSTI]

    Witzel, Wayne M; Carroll, Malcolm S

    2011-01-01T23:59:59.000Z

    We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/sSi quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.

  13. SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge

    E-Print Network [OSTI]

    Wayne M. Witzel; Rajib Rahman; Malcolm S. Carroll

    2012-05-14T23:59:59.000Z

    We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/Si quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.

  14. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...

  15. Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs

    E-Print Network [OSTI]

    Chléirigh, C. Ni

    The hole mobility characteristics of ?110? /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied.

  16. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31T23:59:59.000Z

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  17. Gas-source molecular-beam epitaxy of InGaP and GaAs on strained-relaxed Ge{sub x}Si{sub 1-x}/Si

    SciTech Connect (OSTI)

    Kuo, J.M.; Fitzgerald, E.A.; Xie, Y.H. [AT& T Bell Lab., Murray Hill, NJ (United States)] [and others] [AT& T Bell Lab., Murray Hill, NJ (United States); and others

    1993-05-01T23:59:59.000Z

    Lattice-matched GaAs and InGaP structures on strain-relieved Ge/graded GeSi/Si without increasing the threading dislocation density at the III-V/Ge interface have been successfully grown. The results show that exposure of the Ge surface to As{sub 2} produces a drastic change in the step structure of the Ge surface. Subsequent exposure to Ga and continuation of growth invariably produces three-dimensional growth and a high threading dislocation density at the GaAs/Ge interface. However, exposure of the Ge surface to Ga does not appear to change the Ge step structure, and subsequent growth of GaAs leads to near two-dimensional growth and no massive increase in threading dislocation density at the GaAs/Ge interface as in the case of As{sub 2} exposure. InGaP light-emitting homojunction diodes have been fabricated on the relaxed Ge/graded GeSi/Si. Room-temperature operation was achieved with a surface-emitting output power of {approximately} 10 mW/cm{sup 2}. The best dislocation density achieved was 5x10{sup 6}-10{sup 7} cm{sup {minus}2} in the InGaP/GaAs/Ge/graded GeSi/Si structure. 9 refs., 3 figs.

  18. Light Computing

    E-Print Network [OSTI]

    Gordon Chalmers

    2006-10-13T23:59:59.000Z

    A configuration of light pulses is generated, together with emitters and receptors, that allows computing. The computing is extraordinarily high in number of flops per second, exceeding the capability of a quantum computer for a given size and coherence region. The emitters and receptors are based on the quantum diode, which can emit and detect individual photons with high accuracy.

  19. Relaxed SiGe Layers with High Ge Content by Compliant Substrates , R.L. Peterson1

    E-Print Network [OSTI]

    Relaxed SiGe Layers with High Ge Content by Compliant Substrates H. Yin1 , R.L. Peterson1 , K, high Ge content SiGe layers have been realized using stress balance on a compliant under compression. Upon equilibrium after an annealing, stress balance was formed between the SiGe films

  20. Monolithic Ge-on-Si lasers for integrated photonics

    E-Print Network [OSTI]

    Liu, Jifeng

    We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

  1. Ge-on-Si laser for silicon photonics

    E-Print Network [OSTI]

    Camacho-Aguilera, Rodolfo Ernesto

    2013-01-01T23:59:59.000Z

    Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (Ge ...

  2. Is there a risk from not using GE animals?

    E-Print Network [OSTI]

    Murray, James D.; Maga, Elizabeth A.

    2010-01-01T23:59:59.000Z

    Is there a risk from not using GE animals? James D. Murray •rst genetically engi- neered (GE) plants and animals forthe debate often focuses on GE as a technique that is used

  3. Germanium: From Its Discovery to SiGe Devices

    E-Print Network [OSTI]

    Haller, E.E.

    2006-01-01T23:59:59.000Z

    From Its Discovery to SiGe Devices E.E. Haller Department ofrapidly rising interest in SiGe alloys, we are just startingstrained and unstrained SiGe multilayer structures [58]. 9.

  4. Scaling of SiGe Heterojunction Bipolar Transistors

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    Scaling of SiGe Heterojunction Bipolar Transistors JAE-SUNG RIEH, SENIOR MEMBER, IEEE, DAVID-century. This paper inves- tigates the impacts of scaling on SiGe heterojunction bipolar tran- sistors (HBTs), which), epitaxial-base Si BJTs (Epi Si BJT), SiGe HBTs (SiGe HBT), and SiGe HBTs with carbon-doped base (SiGeC HBT

  5. Residential Lighting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's PossibleRadiation Protection Technical squestionnairesquestionnaires AgreementLighting

  6. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

    SciTech Connect (OSTI)

    Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2013-08-19T23:59:59.000Z

    The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

  7. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03T23:59:59.000Z

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  8. Engineer Receives UMass "Salute To Service" Award | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    November 22, 2013 - GE Global Research, the technology development arm of the General Electric Company (NYSE: GE), is proud to announce that Dr. Marshall Jones, a world renowned...

  9. Crowdsourcing Wins Manufacturing Leadership 100 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NY, May 22, 2013 - GE Global Research, the technology development arm of the General Electric Co. (NYSE: GE) today announced that it has won a prestigious Manufacturing Leadership...

  10. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis An error occurred. Unable to execute Javascript. Text Version The words...

  11. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-4-13-v-3d-printing-medical-devices Additive Manufacturing Demonstration at GE Global Research ...

  12. Lighting Inventory Lighting Theatre and Drama

    E-Print Network [OSTI]

    Indiana University

    Lighting Inventory Lighting Theatre and Drama Description Totals R.Halls Wells- Metz Light ERS ETC SourceFour 25 25 50 degree ERS Strand Lighting 64 14 24 12 14 36 degree ERS ETC Source Four 15 15 36 degree ERS Strand Lighting 124 60 58 2 4 26 degree ERS ETC SourceFour 2 2 26 degree ERS Strand

  13. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212Elective* Elective* AB E 311 ABE 313 ABE 312 GE 348#ABE 323 co-requisite ABE 327 HSS#@ HSS#@ ABE 324 GE 300# ABE 395 4TH YEAR ABE Elec* ABE Elec* ABE Elec*ABE 422 GE 449# Ag Elec* T.E.* T.E.* ABE Elec* Ag Elec

  14. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect (OSTI)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)] [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

    2014-02-15T23:59:59.000Z

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  15. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect (OSTI)

    Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-21T23:59:59.000Z

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  16. LED Lighting Basics

    Broader source: Energy.gov [DOE]

    Light-Emitting diodes (LEDs) efficiently produce light in a fundamentally different way than any legacy or traditional source of light.

  17. Light Source

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5Let us count theLienertLift Forces in a Light

  18. Structural, electronic and optical properties of orthorhombic CdGeO{sub 3} from first principles calculations

    SciTech Connect (OSTI)

    Barboza, C.A.; Henriques, J.M.; Albuquerque, E.L. [Departamento de Fisica Teorica e Experimental, Universidade Federal do Rio Grande do Norte, 59072-900 Natal, Rio Grande do Norte (Brazil); Caetano, E.W.S., E-mail: ewcaetano@gmail.co [Instituto Federal de Educacao, Ciencia e Tecnologia do Ceara, Av. 13 de Maio, 2081, Benfica, 60040-531 Fortaleza, Ceara (Brazil); Freire, V.N.; Costa, J.A.P. da [Departamento de Fisica, Universidade Federal do Ceara, Centro de Ciencias, Caixa Postal 6030, Campus do Pici, 60455-760 Fortaleza, Ceara (Brazil)

    2010-02-15T23:59:59.000Z

    Orthorhombic perovskite CdGeO{sub 3} was studied using the density-functional theory (DFT) formalism. The electronic band structure, density of states, effective masses, dielectric function and optical absorption were obtained. Comparing with orthorhombic CaGeO{sub 3}, which is an indirect S->GAMMA gap material, the substitution of calcium by cadmium changes the valence band maximum from the S point to the GAMMA point in reciprocal space, and decreases the Kohn-Sham band gap energy. Our results suggest that orthorhombic CdGeO{sub 3} has features of a semiconductor and is potentially useful for optoelectronic applications. - Abstract: Graphical Abstract Legend (TOC Figure): Different views of the unit cell of orthorhombic CdGeO{sub 3} (left, top). The electronic band structure near the main gap and the partial density of states (PDOS) are shown also (right), as well as the optical absorption for different polarizations of incident light (left, bottom).

  19. On The Origin of Light Dark Matter Species

    SciTech Connect (OSTI)

    Essig, Rouven; Kaplan, Jared; Schuster, Philip; /SLAC; Toro, Natalia; /Stanford U., Phys. Dept.

    2010-06-04T23:59:59.000Z

    TeV-mass dark matter charged under a new GeV-scale gauge force can explain electronic cosmic-ray anomalies. We propose that the CoGeNT and DAMA direct detection experiments are observing scattering of light stable states 'GeV-Matter' that are charged under this force and constitute a small fraction of the dark matter halo. Dark higgsinos in a supersymmetric dark sector are natural candidates for GeV-Matter that scatter off protons with a universal cross-section of 5 x 10{sup -38} cm{sup 2} and can naturally be split by 10-30 keV so that their dominant interaction with protons is down-scattering. As an example, down-scattering of an O(5) GeV dark higgsino can simultaneously explain the spectra observed by both CoGeNT and DAMA. The event rates in these experiments correspond to a GeV-Matter abundance of 0.2-1% of the halo mass density. This abundance can arise directly from thermal freeze-out at weak coupling, or from the late decay of an unstable TeV-scale WIMP. Our proposal can be tested by searches for exotics in the BaBar and Belle datasets.

  20. Atomic scale insight into the amorphous structure of Cu doped GeTe phase-change material

    SciTech Connect (OSTI)

    Zhang, Linchuan; Sa, Baisheng [Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005 (China); Zhou, Jian; Sun, Zhimei, E-mail: zmsun@buaa.edu.cn [School of Materials Science and Engineering, and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China); Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, CAS, 200050 Shanghai (China)

    2014-10-21T23:59:59.000Z

    GeTe shows promising application as a recording material for phase-change nonvolatile memory due to its fast crystallization speed and extraordinary amorphous stability. To further improve the performance of GeTe, various transition metals, such as copper, have been doped in GeTe in recent works. However, the effect of the doped transition metals on the stability of amorphous GeTe is not known. Here, we shed light on this problem for the system of Cu doped GeTe by means of ab initio molecular dynamics calculations. Our results show that the doped Cu atoms tend to agglomerate in amorphous GeTe. Further, base on analyzing the pair correlation functions, coordination numbers and bond angle distributions, remarkable changes in the local structure of amorphous GeTe induced by Cu are obviously seen. The present work may provide some clues for understanding the effect of early transition metals on the local structure of amorphous phase-change compounds, and hence should be helpful for optimizing the structure and performance of phase-change materials by doping transition metals.

  1. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  2. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

  3. GE Unveils High-Tech Superhero GENIUS MAN | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    education Committed to inspiring the next generation of scientists and engineers Infused with an array of superpowers inspired by GE technologies Super Vision, ability to...

  4. LIPSS results for photons coupling to light neutral scalar bosons

    SciTech Connect (OSTI)

    Andrei Afanasev; Oliver K. Baker; Kevin Beard; George Biallas; James Boyce; Minarni Minarni; Roopchan Ramdon; Michelle D. Shinn; Penny Slocum

    2008-06-01T23:59:59.000Z

    The LIPSS search for a light neutral scalar boson coupling to optical photons is reported. The search covers a region of parameter space of approximately 1.0 meV and coupling strength greater than 10^-6 GeV^-1. The LIPSS results show no evidence for scalar coupling in this region of parameter space.

  5. Be a part of something bigger than yourself GE Healthcare

    E-Print Network [OSTI]

    Rimon, Elon

    Be a part of something bigger than yourself GE Healthcare Position: Mechanical Engineer as a contractor · Working at GE site at Tirat-Carmel. · Start: immediately · Duration 6-10 months, with optional elongation. ElgemsMoked@ge.com-CV www.gehealthcare.com We are GE Healthcare, a $17 billion division

  6. Sustainable Office Lighting Options

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Sustainable Office Lighting Options Task Lighting: Task lighting is a localized method of lighting a workspace so that additional, unnecessary lighting is eliminated, decreasing energy usage and costs. Illumination levels in the targeted work areas are higher with task lighting than with the ambient levels

  7. Advanced Light Source control system

    SciTech Connect (OSTI)

    Magyary, S.; Chin, M.; Cork, C.; Fahmie, M.; Lancaster, H.; Molinari, P.; Ritchie, A.; Robb, A.; Timossi, C.

    1989-03-01T23:59:59.000Z

    The Advanced Light Source (ALS) is a third generation 1--2 GeV synchrotron radiation source designed to provide ports for 60 beamlines. It uses a 50 MeV electron linac and 1.5 GeV, 1 Hz, booster synchrotron for injection into a 1--2 GeV storage ring. Interesting control problems are created because of the need for dynamic closed beam orbit control to eliminate interaction between the ring tuning requirements and to minimize orbit shifts due to ground vibrations. The extremely signal sensitive nature of the experiments requires special attention to the sources of electrical noise. These requirements have led to a control system design which emphasizes connectivity at the accelerator equipment end and a large I/O bandwidth for closed loop system response. Not overlooked are user friendliness, operator response time, modeling, and expert system provisions. Portable consoles are used for local operation of machine equipment. Our solution is a massively parallel system with >120 Mbits/sec I/O bandwidth and >1500 Mips computing power. At the equipment level connections are made using over 600 powerful Intelligent Local Controllers (ILC-s) mounted in 3U size Eurocard slots using fiber-optic cables between rack locations. In the control room, personal computers control and display all machine variables at a 10 Hz rate including the scope signals which are collected though the control system. Commercially available software and industry standards are used extensively. Particular attention is paid to reliability, maintainability and upgradeability. 10 refs., 11 figs.

  8. UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 201213 Includes course titles and Schedule of Classes designations

    E-Print Network [OSTI]

    Loudon, Catherine

    UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 2012­13 Includes course titles and Schedule of Classes designations GENERAL EDUCATION (GE) REQUIREMENT UCI is committed undergraduates complete a set of general education (GE) requirements. General education courses introduce

  9. 2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director of the National Institute for Advanced

    E-Print Network [OSTI]

    2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director, and emendation of all sorts of newly discovered texts (mostly found at archaeological sites). Professor Ge University, Professor Ge taught at Tsinghua University for a number of years. He is known for many important

  10. Measurement of the direct energy gap of coherently strained SnxGe1x Ge,,001... heterostructures

    E-Print Network [OSTI]

    Atwater, Harry

    Measurement of the direct energy gap of coherently strained SnxGe1Ąx ÕGe,,001... heterostructures The direct energy gap has been measured for coherently strained SnxGe1 x alloys on Ge 001 substrates with 0 for coherently strained SnxGe1 x alloys indicates a large alloy contribution and a small strain contribution

  11. GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising

    E-Print Network [OSTI]

    de Lijser, Peter

    GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising 9% 13% 11% 13% 10% 8% Faculty can easily advise students on GE requirements 10% 18% 9% 24% 33% 11% Staff academic advisors can easily advise students on GE requirements 8% 11

  12. High-germanium-content SiGe islands formed on compliant oxide by SiGe Haizhou Yina)

    E-Print Network [OSTI]

    High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation Haizhou Yina and the nonuniformity of the enhanced germanium content during the SiGe oxidation were improved by depositing a silicon was relaxed by lateral expansion of the SiGe islands, showing that dislocations were not required

  13. Relaxation and recombination processes in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Universitą di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

    2013-12-04T23:59:59.000Z

    The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

  14. High Quality Down Lighting Luminaire with 73% Overall System Efficiency

    SciTech Connect (OSTI)

    Robert Harrison; Steven C. Allen; Joseph Bernier; Robert Harrison

    2010-08-31T23:59:59.000Z

    This report summarizes work to develop a high flux, high efficiency LED-based downlight at OSRAM SYLVANIA under US Department of Energy contract DE-FC26-08NT01582. A new high power LED and electronic driver were developed for these downlights. The LED achieved 100 lumens per watt efficacy and 1700 lumen flux output at a correlated color temperature of 3500K. The driver had 90% electrical conversion efficiency while maintaining excellent power quality with power factor >0.99, and total harmonic distortion <10%. Two styles of downlights using the LED and driver were shown to exceed the project targets for steady-state luminous efficacy and flux of 70 lumens per watt and 1300 lumens, respectively. Compared to similar existing downlights using compact fluorescent or LED sources, these downlights had much higher efficacy at nearly the same luminous flux.

  15. Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe/Si*

    E-Print Network [OSTI]

    Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe the sudden rise in threading dislocation density in Ge-rich relaxed graded SiGe layers grown at higher growth systems, including relaxed graded SiGe on Si substrates i.e., x Si1-xGex /Si ,1,2 InGaP on GaP substrates

  16. Development of White-Light Emitting Active Layers in Nitride Based Heterostructures for Phosphorless Solid State Lighting

    SciTech Connect (OSTI)

    Jan Talbot; Kailash Mishra

    2007-12-31T23:59:59.000Z

    This report provides a summary of research activities carried out at the University of California, San Diego and Central Research of OSRAM SYLVANIA in Beverly, MA partially supported by a research contract from US Department of Energy, DE-FC26-04NT422274. The main objective of this project was to develop III-V nitrides activated by rare earth ions, RE{sup 3+}, which could eliminate the need for phosphors in nitride-based solid state light sources. The main idea was to convert electron-hole pairs injected into the active layer in a LED die to white light directly through transitions within the energy levels of the 4f{sup n}-manifold of RE{sup 3+}. We focused on the following materials: Eu{sup 3+}(red), Tb{sup 3+}(green), Er{sup 3+}(green), Dy{sup 3+}(yellow) and Tm{sup 3+}(blue) in AlN, GaN and alloys of AlN and GaN. Our strategy was to explore candidate materials in powder form first, and then study their behavior in thin films. Thin films of these materials were to be deposited on sapphire substrates using pulsed laser deposition (PLD) and metal organic vapor phase epitaxy (MOVPE). The photo- and cathode-luminescence measurements of these materials were used to investigate their suitability for white light generation. The project proceeded along this route with minor modifications needed to produce better materials and to expedite our progress towards the final goal. The project made the following accomplishments: (1) red emission from Eu{sup 3+}, green from Tb{sup 3+}, yellow from Dy{sup 3+} and blue from Tm{sup 3+} in AlN powders; (2) red emission from Eu{sup 3+} and green emission from Tb{sup 3+} in GaN powder; (3) red emission from Eu{sup 3+} in alloys of GaN and AlN; (4) green emission from Tb{sup 3+} in GaN thin films by PLD; (5) red emission from Eu{sup 3+} and Tb{sup 3+} in GaN thin films deposited by MOVPE; (6) energy transfer from host to RE{sup 3+}; (7) energy transfer from Tb{sup 3+} to Eu{sup 3+} in AlN powders; (8) emission from AlN powder samples codoped with (Eu{sup 3+} ,Tb{sup 3+} ) and (Dy{sup 3+}, Tm{sup 3+}); and (9) white emission from AlN codoped with Dy{sup 3+} and Tm{sup 3+}. We also extensively studied the stabilities of rare earth ions in GaN, and the nature of oxygen defects in GaN and its impact on the optical properties of the host material, using first principles method. Results from these theoretical calculations together with fluorescence measurements from the materials essentially proved the underlying concepts for generating white light using RE{sup 3+}-activated nitrides. For this project, we successfully built a horizontal MOVPE reactor and used it to deposit thin films of undoped and doped nitrides of GaN and InGaN, which is a very significant achievement. Since this reactor was designed and built by in-house experts, it could be easily modified and reassembled for specific research purposes. During this study, it was successfully modified for homogeneous distribution of rare earth ions in a deposited film. It will be an ideal tool for future research involving novel thin film material concepts. We examined carefully the suitability of various metal organic precursors for incorporating RE{sup 3+}. In order to avoid oxygen contamination, several oxygen-free RE{sup 3+} precursors were identified. Both oxygen-free and oxygen- containing metal organic precursors were used for certain rare earth ions (Eu{sup 3+}, Tb{sup 3+} and Er{sup 3+}). However, the suitability of any particular type of precursor for MOVPE deposition was not established during this study, and further study is needed. More intensive research in the future is needed to improve the film quality, and eliminate the separation of rare earth oxide phases during the deposition of thin films by MOVPE. The literature in the area of the chemistry of rare earth ions in nitrides is almost nonexistent, in spite of the significant research on luminescence of RE{sup 3+} in nitrides. Consequently, MOVPE as a method of deposition of RE{sup 3+}-activated nitrides is relatively unexplored. In the following sections of this report, the ou

  17. Light-Meson Spectroscopy with COMPASS

    E-Print Network [OSTI]

    Boris Grube for the COMPASS Collaboration

    2010-12-10T23:59:59.000Z

    COMPASS is a multi-purpose fixed-target experiment at the CERN Super Proton Synchrotron investigating the structure and spectrum of hadrons. One primary goal is the search for new hadronic states, in particular spin-exotic mesons and glueballs. After a short pilot run in 2004 with a 190 GeV/c $\\pi^-$ beam on a Pb target, which showed a significant spin-exotic $J^{PC} = 1^{-+}$ resonance consistent with the controversial $\\pi_1(1600)$, COMPASS collected large data samples with negative and positive hadron beams on H$_2$, Ni, W, and Pb targets in 2008 and 2009. We present results from a partial-wave analysis of diffractive dissociation of 190 GeV/c $\\pi^-$ into $\\pi^-\\pi^+\\pi^-$ final states on Pb and H$_2$ targets with squared four-momentum transfer in the range 0.1 < t' < 1 (GeV/c)^2. This reaction provides clean access to the light-quark meson spectrum up to masses of 2.5 GeV/c^2. A first comparison of the data from Pb and H$_2$ target shows a strong target dependence of the production strength of states with spin projections $M = 0$ and 1 relative to the $a_2(1320)$. The 2004 Pb data were also analyzed in the region of small squared four-momentum transfer t' < 10^{-2} (GeV/c)^2, where we observe interference of diffractive production and photoproduction in the Coulomb-field of the Pb nucleus.

  18. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect (OSTI)

    Gatti, E., E-mail: eleonora.gatti@mater.unimib.it; Pezzoli, F.; Grilli, E. [L-NESS and Dipartimento di Scienza dei Materiali, Universitą di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy); Isa, F.; Chrastina, D.; Isella, G. [L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy); Müller Gubler, E. [Electron Microscopy Center of ETH Zürich (EMEZ), August-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

    2014-07-28T23:59:59.000Z

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3??m thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3?×?10{sup 7?}cm{sup ?2} and an interdiffusion layer at the well/barrier interface of 2.1?nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  19. Lighting Options for Homes.

    SciTech Connect (OSTI)

    Baker, W.S.

    1991-04-01T23:59:59.000Z

    This report covers many aspects of various lighting options for homes. Types of light sources described include natural light, artificial light, incandescent lamps, fluorescent lamps, and high intensity discharge lamps. A light source selection guide gives the physical characteristics of these, design considerations, and common applications. Color, strategies for efficient lighting, and types of lighting are discussed. There is one section giving tips for various situations in specific rooms. Rooms and types of fixtures are shown on a matrix with watts saved by using the recommended type lighting for that room and room location. A major emphasis of this report is saving energy by utilizing the most suitable, recommended lighting option. (BN)

  20. Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay, Jonathan E. Roth, Rebecca K. Scheavitz, Yu-Hsuan Kuo*

    E-Print Network [OSTI]

    Miller, David A. B.

    Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay University, Taipei, Taiwan Abstract: We demonstrate an optical link on silicon employing Ge/SiGe quantum well of the quantum-confined Stark effect (QCSE) on silicon using Ge/SiGe quantum wells opened up the possibility

  1. The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer et al.

    E-Print Network [OSTI]

    Hague, Jim

    The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli,1 L. Ferre Llin,1 S. Cecchi,2 J in the thermoelectric figure of merit, ZT, and power factor at room temperature over bulk Ge, Si1ĄyGey, and Si/Ge

  2. Mobile lighting apparatus

    DOE Patents [OSTI]

    Roe, George Michael; Klebanoff, Leonard Elliott; Rea, Gerald W; Drake, Robert A; Johnson, Terry A; Wingert, Steven John; Damberger, Thomas A; Skradski, Thomas J; Radley, Christopher James; Oros, James M; Schuttinger, Paul G; Grupp, David J; Prey, Stephen Carl

    2013-05-14T23:59:59.000Z

    A mobile lighting apparatus includes a portable frame such as a moveable trailer or skid having a light tower thereon. The light tower is moveable from a stowed position to a deployed position. A hydrogen-powered fuel cell is located on the portable frame to provide electrical power to an array of the energy efficient lights located on the light tower.

  3. Light disappears rapidly (exponentially)

    E-Print Network [OSTI]

    Kudela, Raphael M.

    #12;#12;#12;#12;Light disappears rapidly (exponentially) with depth At the same time, the color of the light shifts #12;#12;#12;#12;· Euphotic zone ­ plentiful light ­ 0-100 m (about) · Dysphotic zone ­ very, very little light ­ 100-1000 m (about) · Aphotic zone ­ no light ­ below 1000 m #12;Sunlight in Water

  4. 23 6 12 8:00 III-V/Ge CMOS

    E-Print Network [OSTI]

    Katsumoto, Shingo

    23 6 12 8:00 - 1 - 1. : III-V/Ge CMOS ~ 200%~ 2. : III-V (Ge) III-V/Ge CMOS (Si) 200% III-V/Ge CMOS 200% III-V/Ge CMOS () () () () III-V III-V/Ge CMOS (1) III-V Ge III-V/Ge CMOS (2) III-V-OI MOSFET (3) III-V/Ge CMOS "2011 Symposia on VLSI

  5. New Light Sources for Tomorrow's Lighting Designs

    E-Print Network [OSTI]

    Krailo, D. A.

    can ever be saved on that monthly energy bill. During the past several years, many new light sources have been developed and introduced. These product introductions have not been limited to anyone lamp type, but instead may be found in fila ment..., fluorescent and high intensity discharge lamp families. Man , ufacturers of light sources have two basic goals for new product development. These goals are high efficiency lighting and improved colo'r rendering properties. High efficiency lighting may take...

  6. Measurement of the neutron-capture cross section of ??Ge and ??Ge below 15 MeV and its relevance to 0??? decay searches of ??Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01T23:59:59.000Z

    The neutron radiative-capture cross section of ??Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ~86% ??Ge and ~14% ??Ge used in the 0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the ³H(p,n)³He, ²H(d,n)³He and ³H(d,n)?He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for ??Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy wasmore »used to determine the ?-ray activity of the daughter nuclei of interest. For the ??Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the ??Ge(n,?)??Ge reaction, the present data are about a factor of two larger than predicted. It was found that the ??Ge(n,?)??Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the ??Ge(n,?)??Ge yield due to the larger cross section of the former reaction.« less

  7. EK101 Engineering Light Smart Lighting

    E-Print Network [OSTI]

    Bifano, Thomas

    EK101 Engineering Light Smart Lighting Homework for 9/10 1. Make an estimate (using if the patent is granted.) 3. What is a lumen? A lux? How are the two related? How would you use a lux meter, (Lux, Lumens/m2) Luminous Flux: Perceivable light power from a source, (Lumens) Use the lux meter

  8. Viscosity Measurement G.E. Leblanc

    E-Print Network [OSTI]

    Kostic, Milivoje M.

    30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western Ontario 30.1 Shear Viscosity ............................................................. 30-l Newtonian and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic

  9. Specific light in sculpture

    E-Print Network [OSTI]

    Powell, John William

    1989-01-01T23:59:59.000Z

    Specific light is defined as light from artificial or altered natural sources. The use and manipulation of light in three dimensional sculptural work is discussed in an historic and contemporary context. The author's work ...

  10. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    SciTech Connect (OSTI)

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433 (China); Chen, D. D.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, College of Science, Shanghai University, Shanghai 200444 (China)

    2014-07-14T23:59:59.000Z

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488?nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325?nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  11. Light Duty Combustion Research: Advanced Light-Duty Combustion...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Light Duty Combustion Research: Advanced Light-Duty Combustion Experiments Light Duty Combustion Research: Advanced Light-Duty Combustion Experiments 2009 DOE Hydrogen Program and...

  12. GE Teams with NY College to Pilot SOFC Technology |GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to...

  13. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap...

  14. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year...

  15. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    SciTech Connect (OSTI)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel, E-mail: daniel.chrastina@polimi.it; Mondiali, Valeria; Isella, Giovanni [L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Bollani, Monica [IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4?GPa of tensile stress to be obtained.

  16. Status of the Linac Coherent Light Source

    SciTech Connect (OSTI)

    Galayda, John N.; /SLAC

    2011-11-04T23:59:59.000Z

    The Linac Coherent Light Source (LCLS) is a free electron laser facility in construction at Stanford Linear Accelerator Center. It is designed to operate in the wavelength range 0.15-1.5 nanometers. At the time of this conference, civil construction of new tunnels and buildings is complete, the necessary modifications to the SLAC linac are complete, and the undulator system and x-ray optics/diagnostics are being installed. The electron gun, 135 MeV injector linac and 250 MeV bunch compressor were commissioned in 2007. Accelerator commissioning activities are presently devoted to the achievement of performance goals for the completed 14 GeV linac.

  17. Exciting White Lighting

    Broader source: Energy.gov [DOE]

    Windows that emit light and are more energy efficient? Universal Display’s PHOLED technology enables windows that have transparent light-emitting diodes in them.

  18. The Majorana Ge-76 double-beta decay project

    SciTech Connect (OSTI)

    Avignone, Frank Titus [ORNL

    2010-01-01T23:59:59.000Z

    The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

  19. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ok GE Foundation donates 400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to sponsor week-long, GE Summer Science Academy at OSSM for Oklahoma...

  20. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Meet & Greet GE Researchers at ASME Turbo 2014 Thomas Ripplinger 2014.06.10 Do you love gas turbine research as much as I do? Then I want to meet you next week Since joining GE...

  1. Driving Sensing Technology in Oil & Gas | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a bit more about Bill's work. Bill joined GE Global Research in 2010. For the past four years his emphasis has been on developing advanced photonics technologies for multiple GE...

  2. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-03-11T23:59:59.000Z

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore »dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  3. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    SciTech Connect (OSTI)

    Cecchi, S., E-mail: stefano.cecchi@mdm.imm.cnr.it; Chrastina, D.; Frigerio, J.; Isella, G. [L-NESS, Dipartimento di Fisica, Politecnico di Milano–Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Gatti, E.; Guzzi, M. [L-NESS, Dipartimento di Scienza dei Materiali, Universitą di Milano Bicocca, via Cozzi 53, I-20126 Milano (Italy); Müller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Auguste-Piccard-Hof 1, CH-8093 Zurich (Switzerland); Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-03-07T23:59:59.000Z

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1??m thick Si{sub 1?x}Ge{sub x} buffers (with x?>?0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475?°C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1?x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

  4. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom); Dobbie, A.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7A (United Kingdom)

    2014-01-07T23:59:59.000Z

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1?x}Ge{sub x} alloys for germanium concentrations x???0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28?Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ?2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x?=?1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  5. Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*

    E-Print Network [OSTI]

    Bowers, John

    Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

  6. MOTION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2011-01-01T23:59:59.000Z

    MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.OF ELECTRON-HOLE DROPS IN Ge R M Westervelt, J C Culbertson

  7. Ge.Meyer -MPL-27.11.002 Status Tunerentwicklung

    E-Print Network [OSTI]

    Ge.Meyer -MPL- 27.11.002 Status Tunerentwicklung 1) Geschichte: Alter franz. Tuner weich, hatte Hysterese. Federkonstante: Gerechnet 5,4 µ/kN, gemessen 26,7 µ/kN (Faktor 5), Ge.Meyer gerechnet 14,6 µ Felder. 2) Tuner 0 / H.Kaiser, Ge.Meyer -MPL- Deshalb wurde ein neues Konzept überlegt. Dieses Konzept

  8. PFP Emergency Lighting Study

    SciTech Connect (OSTI)

    BUSCH, M.S.

    2000-02-02T23:59:59.000Z

    NFPA 101, section 5-9 mandates that, where required by building classification, all designated emergency egress routes be provided with adequate emergency lighting in the event of a normal lighting outage. Emergency lighting is to be arranged so that egress routes are illuminated to an average of 1.0 footcandle with a minimum at any point of 0.1 footcandle, as measured at floor level. These levels are permitted to drop to 60% of their original value over the required 90 minute emergency lighting duration after a power outage. The Plutonium Finishing Plant (PFP) has two designations for battery powered egress lights ''Emergency Lights'' are those battery powered lights required by NFPA 101 to provide lighting along officially designated egress routes in those buildings meeting the correct occupancy requirements. Emergency Lights are maintained on a monthly basis by procedure ZSR-12N-001. ''Backup Lights'' are battery powered lights not required by NFPA, but installed in areas where additional light may be needed. The Backup Light locations were identified by PFP Safety and Engineering based on several factors. (1) General occupancy and type of work in the area. Areas occupied briefly during a shiftly surveillance do not require backup lighting while a room occupied fairly frequently or for significant lengths of time will need one or two Backup lights to provide general illumination of the egress points. (2) Complexity of the egress routes. Office spaces with a standard hallway/room configuration will not require Backup Lights while a large room with several subdivisions or irregularly placed rooms, doors, and equipment will require Backup Lights to make egress safer. (3) Reasonable balance between the safety benefits of additional lighting and the man-hours/exposure required for periodic light maintenance. In some plant areas such as building 236-Z, the additional maintenance time and risk of contamination do not warrant having Backup Lights installed in all rooms. Sufficient light for egress is provided by existing lights located in the hallways.

  9. Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1?x]/Ge interface

    E-Print Network [OSTI]

    Mazzeo, G.

    Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate ...

  10. Donald Foust | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Adhesion A Transparent, High Barrier and High Heat Substrate for Organic Electronics Fault-Tolerant, Scalable Organic Light-Emitting Device Architecture ...

  11. 33rd International Lie`ge Colloquium on Ocean Dynamics Lie`ge, Belgium, May 711, 2001

    E-Print Network [OSTI]

    Leonard, John J.

    Preface 33rd International Lie`ge Colloquium on Ocean Dynamics Lie`ge, Belgium, May 7Ā­11, 2001 The International Lie`ge Colloquium on Ocean Dynamics is organized annually. The topic differs from year to year. Assembling a group of active and eminent scien- tists from various countries and often different disci

  12. On the origin of GeV emission in gamma-ray bursts

    SciTech Connect (OSTI)

    Beloborodov, Andrei M.; Hascoėt, Romain; Vurm, Indrek, E-mail: amb@phys.columbia.edu [Physics Department and Columbia Astrophysics Laboratory, Columbia University, 538 West 120th Street, New York, NY 10027 (United States)

    2014-06-10T23:59:59.000Z

    The most common progenitors of gamma-ray bursts (GRBs) are massive stars with strong stellar winds. We show that the GRB blast wave in the wind should emit a bright GeV flash. It is produced by inverse-Compton cooling of the thermal plasma behind the forward shock. The main part of the flash is shaped by scattering of the prompt MeV radiation (emitted at smaller radii) which streams through the external blast wave. The inverse-Compton flash is bright due to the huge e {sup ±} enrichment of the external medium by the prompt radiation ahead of the blast wave. At late times, the blast wave switches to normal synchrotron-self-Compton cooling. The mechanism is demonstrated by a detailed transfer simulation. The observed prompt MeV radiation is taken as an input of the simulation; we use GRB 080916C as an example. The result reproduces the GeV flash observed by the Fermi telescope. It explains the delayed onset, the steep rise, the peak flux, the time of the peak, the long smooth decline, and the spectral slope of GeV emission. The wind density required to reproduce all these features is typical of Wolf-Rayet stars. Our simulation predicts strong TeV emission 1 minute after the burst trigger; then a cutoff in the observed high-energy spectrum is expected from absorption by extragalactic background light. In addition, a bright optical counterpart of the GeV flash is predicted for plausible values of the magnetic field; such a double (optical+GeV) flash has been observed in GRB 130427A.

  13. Status Report on the Light Baryonic States

    E-Print Network [OSTI]

    B. M. K. Nefkens; J. W. Price

    2002-02-08T23:59:59.000Z

    The regularities in the spectrum of the light baryon resonances are reviewed and compared with those of the light mesons. We discuss the occurrence of parity doublets and clusters, and note the trends in the values of the masses, widths, spins, and parities. The importance of SU(3) flavor is illustrated and the status of quark model calculations of the baryonic spectrum is reviewed. The absence of evidence for baryonic hybrids is particularly interesting. We propose to use better symbols for the baryon resonances which do not conflict with the simple quark structure of QCD. We shall comment also on fine tuning the Star System for the hadronic states. The importance of greater support for the construction and operation of secondary beams of $\\pi$, $K$, $\\bar p$, $\\vec{n}$ and $\\vec\\gamma$ up to 5 GeV/$c$ for the future of non-perturbative QCD is emphasized.

  14. Properties of excited states in {sup 77}Ge.

    SciTech Connect (OSTI)

    Kay, B. P.; Chiara, C. J.; Schiffer, J. P.; Kondev, F. G.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; McCutchan, E. A.; Seweryniak, D.; Stefanescu, I.; Univ. of Maryland; Horia-Hulubei National Inst. for Physics and Nuclear Engineering

    2009-07-01T23:59:59.000Z

    The nucleus {sup 77}Ge was studied through the {sup 76}Ge({sup 13}C,{sup 12}C){sup 77}Ge reaction at a sub-Coulomb energy. The angular distributions of rays depopulating excited states in {sup 77}Ge were measured in order to constrain spin and parity assignments. Some of these assignments are of use in connection with neutrinoless double beta decay, where the population of states near the Fermi surface of {sup 76}Ge was recently explored using transfer reactions.

  15. Lighting and Daylight Harvesting

    E-Print Network [OSTI]

    Bos, J.

    2011-01-01T23:59:59.000Z

    exposing us to the latest products and technologies. Daylight Harvesting A system of controlling the direction and the quantity of light both natural and artificial within a given space. This implies: Control of fenestration in terms of size..., transmission and direction. Control of reflected light within a space. Control of electric light in terms of delivery and amount Daylight harvesting systems are typically designed to maintain a minimum recommended light level. This light level...

  16. EK101 Engineering Light Project: Evaluate Residential Lighting

    E-Print Network [OSTI]

    Bifano, Thomas

    EK101 Engineering Light Project: Evaluate Residential Lighting Compare technical and economic characteristics of three sources of residential light. Two teams of four complete the same project Engineering Light Project: Evaluate Residential Lighting Project Assignment: Evaluate current options

  17. Measuring Ambient Densities and Lorentz Factors of Gamma-Ray Bursts from GeV and Optical Observations

    E-Print Network [OSTI]

    Hascoėt, Romain; Beloborodov, Andrei M

    2015-01-01T23:59:59.000Z

    Fermi satellite discovered that cosmological gamma-ray bursts (GRBs) are accompanied by long GeV flashes. In two GRBs, an optical counterpart of the GeV flash has been detected. Recent work suggests that the GeV+optical flash is emitted by the external blast wave from the explosion in a medium loaded with copious $e^\\pm$ pairs. The full light curve of the flash is predicted by a first-principle radiative transfer simulation and can be tested against observations. Here we examine a sample of 7 bursts with best GeV+optical data and test the model. We find that the observed light curves are in agreement with the theoretical predictions and allow us to measure three parameters for each burst: the Lorentz factor of the explosion, its isotropic kinetic energy, and the external density. With one possible exception of GRB 090510 (which is the only short burst in the sample) the ambient medium is consistent with a wind from a Wolf-Rayet progenitor. The wind density parameter $A=\\rho r^2$ varies in the sample around $1...

  18. Role of nucleation sites on the formation of nanoporous Ge

    SciTech Connect (OSTI)

    Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2012-09-24T23:59:59.000Z

    The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

  19. Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b , Sarah R passivation of Ge(100) surface via formation of Ge-N and Ge-O surface species was studied using scanning cyclotron resonance (ECR) plasma source formed an ordered Ge-N structure on a Ge(100) surface at 500o C. DFT

  20. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28T23:59:59.000Z

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  1. Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner *Corresponding author: rschaevitz@stanford.edu Abstract: Photocurrent measurements in Ge quantum wells parameters for design of high-performance SiGe/Ge quantum well optoelectronics on silicon. Germanium

  2. Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo bandwidth have been demonstrated [4]. 2. Quantum well design Ge is an indirect band gap material, but it has. In order to have good quantum confinement, SiGe barriers are used since Si and Ge have a very high direct

  3. Midinfrared scattering and absorption in Ge powder close to the Anderson localization transition J. Gomez Rivas, R. Sprik, and A. Lagendijk

    E-Print Network [OSTI]

    Sprik, Rudolf

    localization (kls 1) of near infrared light was reported in GaAs (n 3.5) powder samples consisting of randomly a free electron laser we have performed midinfrared transmission and reflection measurements in strongly transition. The refractive index of Ge is very high in the near and midinfrared (n 4.0) 8

  4. ({lambda}, p) Spectrum Analysis in p+A Interactions at 10 GeV/c

    SciTech Connect (OSTI)

    Aslanyan, P. Zh. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Yerevan State of University (Russian Federation); Emelyanenko, V. N. [Joint Institute for Nuclear Research, Dubna (Russian Federation)

    2007-06-13T23:59:59.000Z

    Experimental data from the 2m propane bubble chamber have been analyzed for exotic baryon states search. A number of peculiarities were found in the effective mass spectra of: {lambda}{pi}+({sigma}*+(1382),PDG), {lambda}p and {lambda}pp subsystems. A few events detected on the photographs of the propane bubble chamber exposed to a 10 GeV/c proton beam, were interpreted as S=-2 H0 light(

  5. A Bunch Length Monitor for JLab 12 GeV Upgrade

    SciTech Connect (OSTI)

    Ahmad, Mahmoud Mohamad Ali [ODU; Freyberger, Arne P. [JLAB; Gubeli, Joseph F. [JLAB; Krafft, Geoffrey A. [JLAB

    2013-12-01T23:59:59.000Z

    A continuous non-invasive bunch length monitor for the 12 GeV upgrade of Jefferson Lab will be used to determine the bunch length of the beam. The measurement will be done at the fourth dipole of the injector chicane at 123 MeV using the coherent synchrotron light emitted from the dipole. The estimated bunch length is 333 fs. A vacuum chamber will be fabricated and a Radiabeam real time interferometer will be used. In this paper, background, the estimated calculations and the construction of the chamber will be discussed.

  6. Mid infrared optical properties of Ge/Si quantum dots with different doping level

    SciTech Connect (OSTI)

    Sofronov, A. N.; Firsov, D. A.; Vorobjev, L. E.; Shalygin, V. A.; Panevin, V. Yu.; Vinnichenko, M. Ya. [St. Petersburg State Polytechnic University, Polytechnicheskaya str. 29, St. Petersburg (Russian Federation); Tonkikh, A. A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Danilov, S. N. [University of Regensburg, Regensburg (Germany)

    2013-12-04T23:59:59.000Z

    Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.

  7. Optimized Phosphors for Warm White LED Light Engines

    SciTech Connect (OSTI)

    Setlur, Anant; Brewster, Megan; Garcia, Florencio; Hill, M. Christine; Lyons, Robert; Murphy, James; Stecher, Tom; Stoklosa, Stan; Weaver, Stan; Happek, Uwe; Aesram, Danny; Deshpande, Anirudha

    2012-07-30T23:59:59.000Z

    The objective of this program is to develop phosphor systems and LED light engines that have steady-state LED efficacies (using LEDs with a 60% wall-plug efficiency) of 105–120 lm/W with correlated color temperatures (CCT) ~3000 K, color rendering indices (CRI) >85, <0.003 distance from the blackbody curve (dbb), and <2% loss in phosphor efficiency under high temperature, high humidity conditions. In order to reach these goals, this involves the composition and processing optimization of phosphors previously developed by GE in combination with light engine package modification.

  8. Upgrade of CEBAF from 6-GeV To 12-GeV: Status

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-04-01T23:59:59.000Z

    The CEBAF accelerator is being upgraded from 6 GeV to 12 GeV by the US Department of Energy. The accelerator upgrade is being done within the existing tunnel footprint. The accelerator upgrade includes: 10 new srfbased high-performance cryomodules plus RF systems, doubling the 2K helium plants capability, upgrading the existing beamlines to operate at nearly double the original performance envelope, and adding a beamline to a new experimental area. Construction is over 75% complete with final completion projected for late FY13. Details of the upgrade and status of the work will be presented.

  9. Interface and nanostructure evolution of cobalt germanides on Ge(001)

    SciTech Connect (OSTI)

    Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Universitą degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

    2014-02-21T23:59:59.000Z

    Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

  10. SiGe thin-film structures for solar cells

    SciTech Connect (OSTI)

    Bremond, G.; Daami, A.; Laugier, A. [Inst. National des Sciences Appliquees de Lyon, Villeurbanne (France). Lab. de Physique de la Matiere] [and others

    1998-12-31T23:59:59.000Z

    In order to study their applicability as the active base material in Si thin crystalline film solar cell technology, SiGe relaxed layers grown by Liquid Phase Epitaxy (LPE) and Chemical Vapor Deposition (CVD) on Si substrates are investigated by optical and electrical measurements (TEM, EXD, PL, EBIC). The main results of this work is to point out the improvement of the SiGe active base layer by using smooth Ge graded SiGe buffer layer and remote plasma hydrogenation. TEM, EXD, PL experiments show the effect of the Ge graded buffer layer grown using LPE, by confining the threading dislocations in the SiGe buffer layer close to the Si/SiGe interface. EBIC measurements reveal low recombination activity of dislocations at 300 K providing the diffusion length exceeds the 15 {micro}m layer thickness. The enhanced luminescence of SiGe near bandgap indicates that remote plasma hydrogenation induces a decrease of the non-radiative recombination pathways due to dislocations on CVD layers where defect recombinations dominate as indicated by EBIC measurements. This study points out the importance of controlling relaxed SiGe layers with good minority carrier recombination quality as a key issue for the optimization of new SiGe/Si based solar cells.

  11. Deficiencies of Lighting Codes and Ordinances in Controlling Light Pollution from Parking Lot Lighting Installations

    E-Print Network [OSTI]

    Royal, Emily

    2012-05-31T23:59:59.000Z

    The purpose of this research was to identify the main causes of light pollution from parking lot electric lighting installations and highlight the deficiencies of lighting ordinances in preventing light pollution. Using an industry-accepted lighting...

  12. OpenGL Lighting 13. OpenGL Lighting

    E-Print Network [OSTI]

    McDowell, Perry

    OpenGL Lighting 13. OpenGL Lighting · Overview of Lighting in OpenGL In order for lighting to have an effect in OpenGL, two things are required: A light An object to be lit Lights can be set to any color determine how they reflect the light which hits them. The color(s) of an object is determined

  13. Adaptive Street Lighting Controls

    Broader source: Energy.gov [DOE]

    This two-part DOE Municipal Solid-State Street Lighting Consortium webinar focused on LED street lighting equipped with adaptive control components. In Part I, presenters Amy Olay of the City of...

  14. Sandia National Laboratories: Lighting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lighting Solid-State Lighting Science EFRC On November 11, 2010, in Welcome History of Incandescence History of LEDs Grand Challenges Our EFRC SSLS-EFRC Contacts News Publications...

  15. Patent Record Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPO WebsitePalms Village ResortEnergyL L 2PatentGE's E.

  16. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution4 Department of EnergyCross-SectorDepartment ofGE, MIT

  17. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution4 Department of EnergyCross-SectorDepartment ofGE,

  18. Brazil Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWPSuccess Stories Site MapSolarAboutTaubmanBiofuels Research at GE's

  19. Study of plutonium disposition using existing GE advanced Boiling Water Reactors

    SciTech Connect (OSTI)

    Not Available

    1994-06-01T23:59:59.000Z

    The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the US to dispose of 50 to 100 metric tons of excess of plutonium in a safe and proliferation resistant manner. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing permanent conversion and long-term diversion resistance to this material. The NAS study ``Management and Disposition of Excess Weapons Plutonium identified Light Water Reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a US disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a typical 1155 MWe GE Boiling Water Reactor (BWR) is utilized to convert the plutonium to spent fuel. A companion study of the Advanced BWR has recently been submitted. The MOX core design work that was conducted for the ABWR enabled GE to apply comparable fuel design concepts and consequently achieve full MOX core loading which optimize plutonium throughput for existing BWRs.

  20. Light emitting device comprising phosphorescent materials for white light generation

    DOE Patents [OSTI]

    Thompson, Mark E.; Dapkus, P. Daniel

    2014-07-22T23:59:59.000Z

    The present invention relates to phosphors for energy downconversion of high energy light to generate a broadband light spectrum, which emit light of different emission wavelengths.

  1. Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy spectroscopy

    E-Print Network [OSTI]

    Neumark, Daniel M.

    Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy The low-lying states of Ge2 and Ge2 are probed using negative ion zero electron kinetic energy ZEKE spectroscopy. The ZEKE spectrum of Ge2 yields an electron affinity of 2.035 0.001 eV for Ge2, as well as term

  2. Advanced Demand Responsive Lighting

    E-Print Network [OSTI]

    Advanced Demand Responsive Lighting Host: Francis Rubinstein Demand Response Research Center demand responsive lighting systems Ā­ Importance of dimming Ā­ New wireless controls technologies Ā· Advanced Demand Responsive Lighting (commenced March 2007) #12;Objectives Ā· Provide up-to-date information

  3. Light Rail Transit Strengthening

    E-Print Network [OSTI]

    Minnesota, University of

    Light Rail Transit Improving mobility Easing congestion Strengthening our communities Central Corridor Communicating to the Public During Major Construction May 25, 2011 #12;2 Light Rail Transit;Light Rail Transit Central Corridor Route and Stations 3 · 18 new stations · 9.8 miles of new double

  4. A New Look at the Galactic Diffuse GeV

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    ;Gamma-ray Detectors from 10s MeV to 100s GeV Gamma-rays' trajectories cannot be directly detected #12;Gamma-ray Detectors from 10s MeV to 100s GeV Gamma-rays' trajectories cannot be directly detected Physics 1 #12;Overview Diffuse gamma-ray emission The Galactic diffuse gamma-ray GeV excess Discussion

  5. Structure and vibrations of different charge Ge impurity in ?-quartz

    SciTech Connect (OSTI)

    Kislov, A. N., E-mail: a.n.kislov@urfu.ru; Mikhailovich, A. P., E-mail: a.n.kislov@urfu.ru; Zatsepin, A. F., E-mail: a.n.kislov@urfu.ru [Ural Federal University, 19 Mira St., Yekaterinburg, 620002 (Russian Federation)

    2014-10-21T23:59:59.000Z

    Atomic structure and localized vibrations of ??SiO{sub 2}:Ge are studied using computer modeling techniques. The simulation was carried out by the lattice dynamics calculation of the local density of vibrational states. Local structures parameters are calculated, localized symmetrized vibrations frequency caused by Ge impurity in different charge states are defined. The movements of atoms located near Ge impurity are analyzed and their contribution into localized vibrations of different type is evaluated.

  6. Control of Laser Plasma Based Accelerators up to 1 GeV

    SciTech Connect (OSTI)

    Nakamura, Kei

    2007-12-03T23:59:59.000Z

    This dissertation documents the development of a broadband electron spectrometer (ESM) for GeV class Laser Wakefield Accelerators (LWFA), the production of high quality GeV electron beams (e-beams) for the first time in a LWFA by using a capillary discharge guide (CDG), and a statistical analysis of CDG-LWFAs. An ESM specialized for CDG-LWFAs with an unprecedented wide momentum acceptance, from 0.01 to 1.1 GeV in a single shot, has been developed. Simultaneous measurement of e-beam spectra and output laser properties as well as a large angular acceptance (> {+-} 10 mrad) were realized by employing a slitless scheme. A scintillating screen (LANEX Fast back, LANEX-FB)--camera system allowed faster than 1 Hz operation and evaluation of the spatial properties of e-beams. The design provided sufficient resolution for the whole range of the ESM (below 5% for beams with 2 mrad divergence). The calibration between light yield from LANEX-FB and total charge, and a study on the electron energy dependence (0.071 to 1.23 GeV) of LANEX-FB were performed at the Advanced light source (ALS), Lawrence Berkeley National Laboratory (LBNL). Using this calibration data, the developed ESM provided a charge measurement as well. The production of high quality electron beams up to 1 GeV from a centimeter-scale accelerator was demonstrated. The experiment used a 310 {micro}m diameter gas-filled capillary discharge waveguide that channeled relativistically-intense laser pulses (42 TW, 4.5 x 10{sup 18} W/cm{sup 2}) over 3.3 centimeters of sufficiently low density ({approx_equal} 4.3 x 10{sup 18}/cm{sup 3}) plasma. Also demonstrated was stable self-injection and acceleration at a beam energy of {approx_equal} 0.5 GeV by using a 225 {micro}m diameter capillary. Relativistically-intense laser pulses (12 TW, 1.3 x 10{sup 18}W/cm{sup 2}) were guided over 3.3 centimeters of low density ({approx_equal} 3.5 x 10{sup 18}/cm{sup 3}) plasma in this experiment. A statistical analysis of the CDG-LWFAs performance was carried out. By taking advantage of the high repetition rate experimental system, several thousands of shots were taken in a broad range of the laser and plasma parameters. An analysis program was developed to sort and select the data by specified parameters, and then to evaluate performance statistically. The analysis suggested that the generation of GeV-level beams comes from a highly unstable and regime. By having the plasma density slightly above the threshold density for self injection, (1) the longest dephasing length possible was provided, which led to the generation of high energy e-beams, and (2) the number of electrons injected into the wakefield was kept small, which led to the generation of high quality (low energy spread) e-beams by minimizing the beam loading effect on the wake. The analysis of the stable half-GeV beam regime showed the requirements for stable self injection and acceleration. A small change of discharge delay t{sub dsc}, and input energy E{sub in}, significantly affected performance. The statistical analysis provided information for future optimization, and suggested possible schemes for improvement of the stability and higher quality beam generation. A CDG-LWFA is envisioned as a construction block for the next generation accelerator, enabling significant cost and size reductions.

  7. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01T23:59:59.000Z

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  8. GE Technology to Help Canada Province Meet Growing Energy Needs

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

  9. Limitless Hot Gas Path Cooling Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Organization at GE Global Research, one such potent combination already taking shape is Additive Manufacturing and High Pressure Turbine Blade Cooling. Additive Manufacturing...

  10. GE researchers perform simulations in pursuit of more efficient...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE researchers perform simulations in pursuit of more efficient jet engines and wind turbines Author: John Spizzirri . July 1, 2014 Printer-friendly version The recent addition of...

  11. How Will We Explore Earth's Final Frontier? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    see how technology is helping us understand, utilize and protect the last frontier on earth. At GE Global Research's Rio de Janiero location, researchers are developing...

  12. Media Advisory - Jefferson Lab 12 GeV Upgrade Groundbreaking...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for its 310 million 12 GeV Upgrade project. When: Tuesday, April 14, 2009. Where: CEBAF Center, Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue,...

  13. GE's Arnie Lund Discusses User Experience at an Industrial Scale...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at an Industrial Scale Arnie Lund, manager of the UX Industrial Innovation Lab at GE Global Research in San Ramon, Calif, recently spoke to the Farstuff Podcast about...

  14. approaching cryogenic ge: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Very low Weinreb, Sander 2 Draft 040509 A new high-background-rejection dark matter Ge cryogenic Computer Technologies and Information Sciences Websites Summary: Draft...

  15. Titan propels GE wind turbine research into new territory | ornl...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

  16. Light extraction from organic light-emitting diodes for lighting applications by sand-blasting

    E-Print Network [OSTI]

    Light extraction from organic light-emitting diodes for lighting applications by sand@ust.hk Abstract: Light extraction from organic light-emitting diodes (OLEDs) by scattering the light is one of the effective methods for large-area lighting applications. In this paper, we present a very simple and cost

  17. Photonic crystal light source

    DOE Patents [OSTI]

    Fleming, James G. (Albuquerque, NM); Lin, Shawn-Yu (Albuquerque, NM); Bur, James A. (Corrales, NM)

    2004-07-27T23:59:59.000Z

    A light source is provided by a photonic crystal having an enhanced photonic density-of-states over a band of frequencies and wherein at least one of the dielectric materials of the photonic crystal has a complex dielectric constant, thereby producing enhanced light emission at the band of frequencies when the photonic crystal is heated. The dielectric material can be a metal, such as tungsten. The spectral properties of the light source can be easily tuned by modification of the photonic crystal structure and materials. The photonic crystal light source can be heated electrically or other heating means. The light source can further include additional photonic crystals that exhibit enhanced light emission at a different band of frequencies to provide for color mixing. The photonic crystal light source may have applications in optical telecommunications, information displays, energy conversion, sensors, and other optical applications.

  18. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15T23:59:59.000Z

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  19. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps

    SciTech Connect (OSTI)

    Vasko, Stephanie E.; Kapetanovic, Adnan; Talla, Vamsi; Brasino, Michael D.; Zhu, Zihua; Scholl, Andreas; Torrey, Jessica D.; Rolandi, Marco

    2011-05-16T23:59:59.000Z

    Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel directwrite is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.

  20. Foundations and Light Compass Foundations and Light Compass

    E-Print Network [OSTI]

    Wong, Jennifer L.

    Foundations and Light Compass Case Study Foundations and Light Compass Case Study Jennifer L. WongQuantitative Sensor--centric Designcentric Design Light CompassLight Compass ­­ Models and Abstractions Contaminant Transport Marine Microorganisms Ecosystems, Biocomplexity What is a Light Compass?What is a Light

  1. Lighting and Surfaces 11.1 Introduction to Lighting

    E-Print Network [OSTI]

    Boyd, John P.

    Chapter 11 Lighting and Surfaces 11.1 Introduction to Lighting Three-dimensional surfaces can react to light, and how computer graphics simulates this. There are three species of light (or "illumination models"): 1. Intrinsic (self-emitting) 2. Ambient light (sometimes called "diffuse light") 3

  2. SHIELDING ESTIMATES FOR THE ANL 6.0 GeV SYNCHROTRON LIGHT SOURCE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    JfJO 1>0 i J A. A NGLfi" ItL"u-P f) J'? t1"G- C Ob"G.') 'v's'n t1 Qyl'4 'O::J tj,,5S::' ,:",un3>l ...., : I I I H:lNI 3H1. 01. 01 X 0' SCLS <:1 I &1;------t---...

  3. Ge-on-Si light-emitting materials and devices for silicon photonics

    E-Print Network [OSTI]

    Sun, Xiaochen

    2009-01-01T23:59:59.000Z

    The rapid growing needs for high data transmission bandwidth challenge the metal interconnection technology in every area from chip-level interconnects to long distance communication. Silicon photonics is an ideal platform ...

  4. Preliminary Vacuum Parameters 6 GeV Light Source J. Moenich and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in these gas loadings is 0.5 Tlm. This value also agrees with the preferred gas load between conditioning points as found in tests on a chamber containing the NEG strip 7...

  5. LS-35 6 GeV Light Source Storage Ring Quadrupole and Sextupole...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 shows the cross section of one-fourth of a storage ring quadru- pole magnet. The vacuum chamber outline is shown by the dashed line. A tapered pole is necessary to reduce the...

  6. TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014,ZaleskiThis Decision considers an AppealNORDYNE,Energy

  7. TEE-0077 - In the Matter of GE Appliances & Lighting | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014,ZaleskiThis Decision considers an

  8. Why Is the Speed of Light in Meters Per Second What It Is? | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del SolStrengthening aTurbulenceUtilizeRuraltheWelcomeAnalyticsWhiteResearch Why Is

  9. Arnold Schwarzenegger LIGHTING RESEARCH PROGRAM

    E-Print Network [OSTI]

    Project Summaries ELEMENT 2: ADVANCE LIGHTING TECHNOLOGIES PROJECT 2.1 LIGHT EMITTING DIODE (LED light emitting diodes (LED) technology for general lighting applications by developing a task lamp

  10. Centrality dependence of the thermal excitation-energy deposition in 8-15 GeV/c hadron-Au reactions

    E-Print Network [OSTI]

    R. A. Soltz; R. J. Newby; J. L. Klay; M. Heffner; L. Beaulieu; T. Lefort; K. Kwiatkowski; V. E. Viola

    2009-01-09T23:59:59.000Z

    The excitation energy per residue nucleon (E*/A) and fast and thermal light particle multiplicities are studied as a function of centrality defined as the number of grey tracks emitted N_grey and by the mean number of primary hadron-nucleon scatterings and mean impact parameter extracted from it. The value of E*/A and the multiplicities show an increase with centrality for all systems, 14.6 GeV p-Au and 8.0 GeV pi-Au and pbar-Au collisions, and the excitation energy per residue nucleon exhibits a uniform dependence on N_grey.

  11. Shell model description of Ge isotopes

    E-Print Network [OSTI]

    J. G. Hirsch; P. C. Srivastava

    2012-04-12T23:59:59.000Z

    A shell model study of the low energy region of the spectra in Ge isotopes for $38\\leq N\\leq 50$ is presented, analyzing the excitation energies, quadrupole moments, $B(E2)$ values and occupation numbers. The theoretical results have been compared with the available experimental data. The shell model calculations have been performed employing three different effective interactions and valence spaces.We have used two effective shell model interactions, JUN45 and jj44b, for the valence space $f_{5/2} \\, p \\,g_{9/2}$ without truncation. To include the proton subshell $f_{7/2}$ in valence space we have employed the $fpg$ effective interaction due to Sorlin {\\it et al.}, with $^{48}$Ca as a core and a truncation in the number of excited particles.

  12. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16T23:59:59.000Z

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  13. Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 Si0.75Ge0.25 using various H2 pressures

    E-Print Network [OSTI]

    Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 ÕSi0.75Ge0.25 using various H2 pressures Gianni Taraschi,a) Sajan Saini, Wendy W. Fan, Lionel C Ge in SiO2 was synthesized by the reduction of Si0.75Ge0.25O2 with H2 , at various annealing

  14. High Capacity Li Ion Battery Anodes Using Ge Nanowires

    E-Print Network [OSTI]

    Cui, Yi

    High Capacity Li Ion Battery Anodes Using Ge Nanowires Candace K. Chan, Xiao Feng Zhang, and Yi Cui efficiency > 99%. Structural characterization revealed that the Ge nanowires remain intact and connected nanowire anodes are promising candidates for the development of high-energy-density lithium batteries

  15. Project-X Workshop 120 GeV Target

    E-Print Network [OSTI]

    McDonald, Kirk

    Project-X Workshop 120 GeV Target Summary Ā­ Workshop # 1 N. Simos, M. Martens #12;Project-X Workshop Challenges OVERVIEW Driven by 120 GeV/170 TP-per-spill Ā· Short Term: 170 TPs/2us-spill (materials an existing 400 kW facility Ā­ Constraints #12;Project-X Workshop Presentations - Discussions Ā· Engineering

  16. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  17. Excess vacancies in high energy ion implanted SiGe

    SciTech Connect (OSTI)

    Koegler, R.; Muecklich, A.; Skorupa, W.; Peeva, A.; Kuznetsov, A. Yu.; Christensen, J. S.; Svensson, B. G. [Forschungszentrum Rossendorf, PF 510119, D-01314 Dresden (Germany); Institute of Solid State Physics BAS, Boulevard Tzarigradsko Chaussee 72, 1784 Sofia (Bulgaria); Deparment of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

    2007-02-01T23:59:59.000Z

    Excess vacancies generated by high energy implantation with 1.2 MeV Si{sup +} and 2 MeV Ge{sup +} ions in SiGe were investigated after rapid thermal annealing at 900 degree sign C. Excess vacancies were probed by decoration with Cu and measuring the Cu profile by secondary ion mass spectrometry. Cross section transmission electron microscopy of cleaved specimen enabled to visualize nanocavities resulting from agglomeration of excess vacancies. The ion-induced damage in SiGe increases with increasing Ge fraction of the alloy. The amorphization threshold decreases and the extension of a buried amorphous layer increases for given implantation and annealing conditions. In contrast to ballistic simulations of excess defect generation where perfect local self-annihilation is assumed the concentrations of excess vacancies and excess interstitials in SiGe increase with increasing Ge fraction. The main contribution to the high excess vacancy concentration in SiGe results from the inefficient recombination of vacancies and interstitials. The widely used +1 model describing the ion-induced damage in Si is not valid for SiGe.

  18. Volcanic rifting at Martian grabens Daniel Me`ge,1

    E-Print Network [OSTI]

    Mege, Daniel

    Volcanic rifting at Martian grabens Daniel Me`ge,1 Anthony C. Cook,2,3 Erwan Garel,4 Yves: Solar System Objects: Mars; 8121 Tectonophysics: Dynamics, convection currents and mantle plumes; 8010: Me`ge, D., A. C. Cook, E. Garel, Y. Lagabrielle, and M.-H. Cormier, Volcanic rifting at Martian

  19. High efficiency incandescent lighting

    DOE Patents [OSTI]

    Bermel, Peter; Ilic, Ognjen; Chan, Walker R.; Musabeyoglu, Ahmet; Cukierman, Aviv Ruben; Harradon, Michael Robert; Celanovic, Ivan; Soljacic, Marin

    2014-09-02T23:59:59.000Z

    Incandescent lighting structure. The structure includes a thermal emitter that can, but does not have to, include a first photonic crystal on its surface to tailor thermal emission coupled to, in a high-view-factor geometry, a second photonic filter selected to reflect infrared radiation back to the emitter while passing visible light. This structure is highly efficient as compared to standard incandescent light bulbs.

  20. National Synchrotron Light Source

    ScienceCinema (OSTI)

    BNL

    2009-09-01T23:59:59.000Z

    A tour of Brookhaven's National Synchrotron Light Source (NSLS), hosted by Associate Laboratory Director for Light Sources, Stephen Dierker. The NSLS is one of the world's most widely used scientific research facilities, hosting more than 2,500 guest researchers each year. The NSLS provides intense beams of infrared, ultraviolet, and x-ray light for basic and applied research in physics, chemistry, medicine, geophysics, environmental, and materials sciences.

  1. LED Lighting Retrofit

    E-Print Network [OSTI]

    Shaw-Meadow, N.

    2011-01-01T23:59:59.000Z

    ? Municipal Street Lighting Consortium ? American Public Power Association (APPA) ? Demonstration in Energy Efficiency Development (DEED) ? Source of funding and database of completed LED roadway projects 6 Rules of the Road ESL-KT-11-11-57 CATEE 2011..., 2011 ? 9 Solar-Assisted LED Case Study LaQuinta Hotel, Cedar Park, Texas ? Utilizes 18 - ActiveLED Solar-Assisted Parking Lot Lights ? Utilizes ?power management? to extend battery life while handling light output ? Reduces load which reduces PV...

  2. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect (OSTI)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Süess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10T23:59:59.000Z

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6?ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3?ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  3. Edmund G. Brown Jr. LIGHTING CALIFORNIA'S FUTURE

    E-Print Network [OSTI]

    Edmund G. Brown Jr. Governor LIGHTING CALIFORNIA'S FUTURE: SMART LIGHT-EMITTING DIODE LIGHTING's Future: Smart LightEmitting Diode Lighting in Residential Fans. California Energy Commission, PIER

  4. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe

    E-Print Network [OSTI]

    Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe J. Akola1,2 and R. O. Jones1 1Institut für Festkörperforschung, Forschungszentrum to characterize the amorphous structure of the prototype materials Ge2Sb2Te5 and GeTe. In both, there is long

  5. III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 SiGe Single-Hole Transistor Fabricated by AFM Oxidation and Epitaxial Regrowth

    E-Print Network [OSTI]

    III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 110 SiGe Single, West Lafayette, IN 47907, U.S.A. Nanodevices on Si/SiGe heterostructures are of growing interest [1 the performance of the devices. In this paper, we demonstrate a reproducible single-hole transistor SiGe device

  6. The role of straining and morphology in thermal conductivity of a set of SiGe superlattices and biomimetic SiGe nanocomposites

    E-Print Network [OSTI]

    Tomar, Vikas

    The role of straining and morphology in thermal conductivity of a set of Si­Ge superlattices and biomimetic Si­Ge nanocomposites This article has been downloaded from IOPscience. Please scroll down to see and morphology in thermal conductivity of a set of Si­Ge superlattices and biomimetic Si­Ge nanocomposites Vikas

  7. Comparing Light Bulbs

    Broader source: Energy.gov [DOE]

    In this exercise, students will use a light to demonstrate the difference between being energy-efficient and energy-wasteful, and learn what energy efficiency means.

  8. Total Light Management

    Broader source: Energy.gov [DOE]

    Presentation covers total light management, and is given at the Spring 2010 Federal Utility Partnership Working Group (FUPWG) meeting in Providence, Rhode Island.

  9. Lighting Technology Panel

    Broader source: Energy.gov [DOE]

    Presentation covers the Lighting Technology Panel for the Federal Utility Partnership Working Group (FUPWG) meeting, held on November 18-19, 2009. 

  10. Hybrid Solar Lighting

    SciTech Connect (OSTI)

    Maxey, L Curt [ORNL

    2008-01-01T23:59:59.000Z

    Hybrid solar lighting systems focus highly concentrated sunlight into a fiber optic bundle to provide sunlight in rooms without windows or conventional skylights.

  11. Solid-State Lighting

    Broader source: Energy.gov (indexed) [DOE]

    into the market. On the market side, DOE works closely with drivers, heat sinks, and optics. LEDs must be carefully energy efficiency program partners, lighting professionals,...

  12. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

    SciTech Connect (OSTI)

    Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

    2013-09-14T23:59:59.000Z

    Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

  13. Ratio of jet cross sections at root s=630 GeV and 1800 GeV

    E-Print Network [OSTI]

    Baringer, Philip S.; Bean, Alice; Coppage, Don; Hebert, C.

    2001-03-01T23:59:59.000Z

    The DO Collaboration has measured the inclusive jet cross section in (p) over barp collisions at roots = 630 GeV. The results for pseudorapidities \\ eta \\ < 0.5 are combined with our previous results at roots = 1800 GeV ...

  14. Light quark masses using domain wall fermions

    E-Print Network [OSTI]

    Tom Blum; Amarjit Soni; Matthew Wingate

    1998-09-10T23:59:59.000Z

    We compute the one-loop self-energy correction to the massive domain wall quark propagator. Combining this calculation with simulations at several gauge couplings, we estimate the strange quark mass in the continuum limit. The perturbative one-loop mass renormalization is comparable to that for Wilson quarks and considerably smaller than that for Kogut-Susskind quarks. Also, scaling violations appear mild in comparison to other errors at present. Given their good chiral behavior and these features, domain wall quarks are attractive for evaluating the light quark masses. Our preliminary quenched result is m_s(2 GeV) = 82(15) MeV in the ${\\bar{MS}}$ scheme.

  15. Semiconductor Probes of Light Dark Matter

    E-Print Network [OSTI]

    Peter W. Graham; David E. Kaplan; Surjeet Rajendran; Matthew T. Walters

    2012-11-12T23:59:59.000Z

    Dark matter with mass below about a GeV is essentially unobservable in conventional direct detection experiments. However, newly proposed technology will allow the detection of single electron events in semiconductor materials with significantly lowered thresholds. This would allow detection of dark matter as light as an MeV in mass. Compared to other detection technologies, semiconductors allow enhanced sensitivity because of their low ionization energy around an eV. Such detectors would be particularly sensitive to dark matter with electric and magnetic dipole moments, with a reach many orders of magnitude beyond current bounds. Observable dipole moment interactions can be generated by new particles with masses as great as 1000 TeV, providing a window to scales beyond the reach of current colliders.

  16. Light-shining-through-walls with lasers

    E-Print Network [OSTI]

    Friederike Januschek

    2014-10-07T23:59:59.000Z

    Light-shining-through-walls experiments are the search experiments for weakly interacting slim particles (WISPs) with the smallest model dependence. They have the advantage that not only the detection, but also the production of the WISPs takes place in the laboratory and can thus be controlled. Using lasers is the preferred option for most of the mass region and has led to the world's most stringent laboratory limits (ALPS I) there. At CERN, OSQAR promises to surpass these and at DESY ALPS II is currently set up, which is planning to probe the axion-like particle to photon coupling down to $|g_{a\\gamma}|\\gtrsim 2\\cdot10^{-11}$ GeV$^{-1}$, which is in a region favored by many astrophysical hints.

  17. Ion Implanted Ge:B Far Infrard Blocked Impurity Band Detectors

    E-Print Network [OSTI]

    Beeman, J.W.; Goyal, S.; Reichertz, L.A.; Haller, E.E.

    2008-01-01T23:59:59.000Z

    +16 1.E+15 1.E+14 Depth into Ge Crystal Surface (Å) Figure 5devices does not match that of Ge:Ga photoconductors, whichimplants or stacking devices) Ge IBIB detectors will reach

  18. ALFVEN-WAVE OSCILLATIONS IN A SPHERE, WITH APPLICATIONS TO ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Markiewicz, R.S.

    2011-01-01T23:59:59.000Z

    Rev. B 13,4626 (1976). For Ge(4:2) m is the average of thediscussed for EHD in unstressed Ge (B II )TO ELECI'RON-OOLE DROPS IN Ge R. S. Markiewicz January 1978

  19. NUCLEATION PHENOMENA IN THE FORMATION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2010-01-01T23:59:59.000Z

    lO cjl(K) Symbol erg cm ) Ge - 0.064 T2 Ref. x x Si Ref. T2constructed the ultra-sensitive Ge photodetector which wasand method of mounting. The Ge sample is electrically and

  20. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01T23:59:59.000Z

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byBerkeley, CA, 94720 ABSTRACT Ge nanocrystals are formed inthe Raman spectra of the Ge nanocrystals in-situ. The

  1. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01T23:59:59.000Z

    segregation in Mn-doped Ge”, Journal of Applied Physics 101,Room-temperature ferromagnetism in Ge 1-x Mn x nanowires”,BC high-?/metal gate Ge/C alloy pMOSFETs fabricated directly

  2. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

    SciTech Connect (OSTI)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

    2013-12-04T23:59:59.000Z

    The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

  3. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M., E-mail: nicolau.bom@ufrgs.br [PGMICRO, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil); Soares, G. V.; Hartmann, S.; Bordin, A. [Instituto de Fķsica, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil); Radtke, C. [Instituto de Quķmica, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil)

    2014-10-06T23:59:59.000Z

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?°C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  4. Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen* and D. K. Saldin

    E-Print Network [OSTI]

    Saldin, Dilano

    Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen quantitatively the geometry of mixed Ge-Si dimers on a single domain Si 001 2 1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si 001 at 0.1 ML

  5. Reducing home lighting expenses

    SciTech Connect (OSTI)

    Aimone, M.A.

    1981-02-01T23:59:59.000Z

    Ways to reduce lighting expenses are summarized. These include: turning off lights when not in use; keeping fixtures and lamps clean; replacing lamps with more efficient types; using three-way bulbs; use of daylighting; buying fewer lamps and reducing lamp wattage; consider repainting rooms; replacing recessed fixtures with tracklighting; and using efficient lamps for outdoor use. (MCW)

  6. Explosively pumped laser light

    DOE Patents [OSTI]

    Piltch, Martin S. (Los Alamos, NM); Michelotti, Roy A. (Los Alamos, NM)

    1991-01-01T23:59:59.000Z

    A single shot laser pumped by detonation of an explosive in a shell casing. The shock wave from detonation of the explosive causes a rare gas to luminesce. The high intensity light from the gas enters a lasing medium, which thereafter outputs a pulse of laser light to disable optical sensors and personnel.

  7. Light intensity compressor

    DOE Patents [OSTI]

    Rushford, Michael C. (Livermore, CA)

    1990-01-01T23:59:59.000Z

    In a system for recording images having vastly differing light intensities over the face of the image, a light intensity compressor is provided that utilizes the properties of twisted nematic liquid crystals to compress the image intensity. A photoconductor or photodiode material that is responsive to the wavelength of radiation being recorded is placed adjacent a layer of twisted nematic liquid crystal material. An electric potential applied to a pair of electrodes that are disposed outside of the liquid crystal/photoconductor arrangement to provide an electric field in the vicinity of the liquid crystal material. The electrodes are substantially transparent to the form of radiation being recorded. A pair of crossed polarizers are provided on opposite sides of the liquid crystal. The front polarizer linearly polarizes the light, while the back polarizer cooperates with the front polarizer and the liquid crystal material to compress the intensity of a viewed scene. Light incident upon the intensity compressor activates the photoconductor in proportion to the intensity of the light, thereby varying the field applied to the liquid crystal. The increased field causes the liquid crystal to have less of a twisting effect on the incident linearly polarized light, which will cause an increased percentage of the light to be absorbed by the back polarizer. The intensity of an image may be compressed by forming an image on the light intensity compressor.

  8. Multi-GeV neutrinos due to neutro anti-neutron oscillation in Gamma-Ray Burst Fireballs

    E-Print Network [OSTI]

    Sarira Sahu

    2007-02-27T23:59:59.000Z

    The long and short gamma-ray bursts are believed to be produced due to collapse of massive stars and merger of compact binaries respectively. All these objects are rich in neutron and the jet outflow from these objects must have a neutron component in it. By postulating the neutron anti-neutron oscillation in the gamma-ray burst fireball, we show that, 19-38 GeV neutrinos and anti-neutrinos can be produced due to annihilation of anti-neutrons with the background neutrons. These neutrinos and anti-neutrinos will be produced before the 5-10 GeV neutrinos due to dynamical decoupling of neutrons from the rest of the fireball. Observation of these neutrinos will shed more light on the nature of the GRB progenitors and also be a unique signature of physics beyond the standard model. A possible way of detecting these neutrinos in future is also discussed.

  9. Mrk 421, Mrk 501, and 1ES 1426+428 at 100 GeV with the CELESTE Cherenkov Telescope

    E-Print Network [OSTI]

    Smith, D A; Britto, R; Bruel, P; Gordo, J B; Dumora, D; Durand, E; Eschstruth, P; Espigat, P; Holder, J; Jacholkowska, A; Lavalle, J; Le Gallou, R; Lott, B; Manseri, H; Munz, F; Nuss, E; Piron, Frédéric; Reposeur, T; Sako, T

    2006-01-01T23:59:59.000Z

    We have measured the gamma-ray fluxes of the blazars Mrk 421 and Mrk 501 in the energy range between 50 and 350 GeV (1.2 to 8.3 x 10^25 Hz). The detector, called CELESTE, used first 40, then 53 heliostats of the former solar facility "Themis" in the French Pyrenees to collect Cherenkov light generated in atmospheric particle cascades. The signal from Mrk 421 is often strong. We compare its flux with previously published multi-wavelength studies and infer that we are straddling the high energy peak of the spectral energy distribution. The signal from Mrk 501 in 2000 was weak (3.4 sigma). We obtain an upper limit on the flux from 1ES 1426+428 of less than half that of the Crab flux near 100 GeV. The data analysis and understanding of systematic biases have improved compared to previous work, increasing the detector's sensitivity.

  10. Mrk 421, Mrk 501, and 1ES 1426+428 at 100 GeV with the CELESTE Cherenkov Telescope

    E-Print Network [OSTI]

    D. A. Smith; E. Brion; R. Britto; P. Bruel; J. Bussons Gordo; D. Dumora; E. Durand; P. Eschstruth; P. Espigat; J. Holder; A. Jacholkowska; J. Lavalle; R. Le Gallou; B. Lott; H. Manseri; F. Munz; E. Nuss; F. Piron; R. C. Rannot; T. Reposeur; T. Sako

    2006-08-19T23:59:59.000Z

    We have measured the gamma-ray fluxes of the blazars Mrk 421 and Mrk 501 in the energy range between 50 and 350 GeV (1.2 to 8.3 x 10^25 Hz). The detector, called CELESTE, used first 40, then 53 heliostats of the former solar facility "Themis" in the French Pyrenees to collect Cherenkov light generated in atmospheric particle cascades. The signal from Mrk 421 is often strong. We compare its flux with previously published multi-wavelength studies and infer that we are straddling the high energy peak of the spectral energy distribution. The signal from Mrk 501 in 2000 was weak (3.4 sigma). We obtain an upper limit on the flux from 1ES 1426+428 of less than half that of the Crab flux near 100 GeV. The data analysis and understanding of systematic biases have improved compared to previous work, increasing the detector's sensitivity.

  11. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    SciTech Connect (OSTI)

    Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)

    2013-12-21T23:59:59.000Z

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  12. Lighting affects appearance LightSource emits photons

    E-Print Network [OSTI]

    Jacobs, David

    1 Lighting affects appearance #12;2 LightSource emits photons Photons travel in a straight line). And then some reach the eye/camera. #12;3 Reflectance Model how objects reflect light. Model light sources Algorithms for computing Shading: computing intensities within polygons Determine what light strikes what

  13. VIRTUAL LIGHT: DIGITALLY-GENERATED LIGHTING FOR VIDEO CONFERENCING APPLICATIONS

    E-Print Network [OSTI]

    Fisher, Kathleen

    VIRTUAL LIGHT: DIGITALLY-GENERATED LIGHTING FOR VIDEO CONFERENCING APPLICATIONS Andrea Basso method to improve the lighting conditions of a real scene or video sequence. In particular we concentrate on modifying real light sources intensities and inserting virtual lights into a real scene viewed from a fixed

  14. GeV Emission from Collisional Magnetized Gamma Ray Bursts

    E-Print Network [OSTI]

    P. Mészįros; M. J. Rees

    2011-04-26T23:59:59.000Z

    Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

  15. Efficient tunable luminescence of SiGe alloy sheet polymers

    SciTech Connect (OSTI)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-06-18T23:59:59.000Z

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si{sub 1{minus}x}Ge{sub x}){sub 2} precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. {copyright} 2001 American Institute of Physics.

  16. Optical absorption in highly-strained Ge/SiGe quantum wells: the role of ?-to-? scattering

    E-Print Network [OSTI]

    L. Lever; Z. Ikoni?; A. Valavanis; R. W. Kelsall; M. Myronov; D. R. Leadley; Y. Hu; N. Owens; F. Y. Gardes; G. T. Reed

    2013-02-28T23:59:59.000Z

    We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch with the virtual substrate results in a blue shift of the direct absorption edge, as well as a reduction in the \\Gamma-valley scattering lifetime because of strain-induced splittings of the conduction band valleys. We investigate theoretically the \\Gamma-valley carrier lifetimes by evaluating the \\Gamma-to-L and \\Gamma-to-\\Delta{} scattering rates in strained Ge/SiGe semiconductor heterostructures. These scattering rates are used to determine the lifetime broadening of excitonic peaks and the indirect absorption in simulated absorption spectra, which are compared with measured absorption spectra for quantum well structures with systematically-varied dimensions. We find that \\Gamma-to-\\Delta{} scattering is significant in compressively strained Ge quantum wells and that the \\Gamma-valley electron lifetime is less than 50 fs in the highly-strained structures reported here, where \\Gamma-to-\\Delta{} scattering accounted for approximately half of the total scattering rate.

  17. Light-Front Holographic QCD

    SciTech Connect (OSTI)

    Brodsky, Stanley J.; /SLAC /Southern Denmark U., CP3-Origins; de Teramond, Guy F.; /Costa Rica U.

    2012-02-16T23:59:59.000Z

    The relation between the hadronic short-distance constituent quark and gluon particle limit and the long-range confining domain is yet one of the most challenging aspects of particle physics due to the strong coupling nature of Quantum Chromodynamics, the fundamental theory of the strong interactions. The central question is how one can compute hadronic properties from first principles; i.e., directly from the QCD Lagrangian. The most successful theoretical approach thus far has been to quantize QCD on discrete lattices in Euclidean space-time. Lattice numerical results follow from computation of frame-dependent moments of distributions in Euclidean space and dynamical observables in Minkowski spacetime, such as the time-like hadronic form factors, are not amenable to Euclidean lattice computations. The Dyson-Schwinger methods have led to many important insights, such as the infrared fixed point behavior of the strong coupling constant, but in practice, the analyses are limited to ladder approximation in Landau gauge. Baryon spectroscopy and the excitation dynamics of nucleon resonances encoded in the nucleon transition form factors can provide fundamental insight into the strong-coupling dynamics of QCD. New theoretical tools are thus of primary interest for the interpretation of the results expected at the new mass scale and kinematic regions accessible to the JLab 12 GeV Upgrade Project. The AdS/CFT correspondence between gravity or string theory on a higher-dimensional anti-de Sitter (AdS) space and conformal field theories in physical space-time has led to a semiclassical approximation for strongly-coupled QCD, which provides physical insights into its nonperturbative dynamics. The correspondence is holographic in the sense that it determines a duality between theories in different number of space-time dimensions. This geometric approach leads in fact to a simple analytical and phenomenologically compelling nonperturbative approximation to the full light-front QCD Hamiltonian 'Light-Front Holography'. Light-Front Holography is in fact one of the most remarkable features of the AdS/CFT correspondence. The Hamiltonian equation of motion in the light-front (LF) is frame independent and has a structure similar to eigenmode equations in AdS space. This makes a direct connection of QCD with AdS/CFT methods possible. Remarkably, the AdS equations correspond to the kinetic energy terms of the partons inside a hadron, whereas the interaction terms build confinement and correspond to the truncation of AdS space in an effective dual gravity approximation. One can also study the gauge/gravity duality starting from the bound-state structure of hadrons in QCD quantized in the light-front. The LF Lorentz-invariant Hamiltonian equation for the relativistic bound-state system is P{sub {mu}}P{sup {mu}}|{psi}(P)> = (P{sup +}P{sup -} - P{sub {perpendicular}}{sup 2})|{psi}(P)> = M{sup 2}|{psi}(P)>, P{sup {+-}} = P{sup 0} {+-} P{sup 3}, where the LF time evolution operator P{sup -} is determined canonically from the QCD Lagrangian. To a first semiclassical approximation, where quantum loops and quark masses are not included, this leads to a LF Hamiltonian equation which describes the bound-state dynamics of light hadrons in terms of an invariant impact variable {zeta} which measures the separation of the partons within the hadron at equal light-front time {tau} = x{sup 0} + x{sup 3}. This allows us to identify the holographic variable z in AdS space with an impact variable {zeta}. The resulting Lorentz-invariant Schroedinger equation for general spin incorporates color confinement and is systematically improvable. Light-front holographic methods were originally introduced by matching the electromagnetic current matrix elements in AdS space with the corresponding expression using LF theory in physical space time. It was also shown that one obtains identical holographic mapping using the matrix elements of the energy-momentum tensor by perturbing the AdS metric around its static solution. A gravity dual to QCD is not known, but th

  18. Lakeview Light and Power- Commercial Lighting Rebate Program

    Broader source: Energy.gov [DOE]

    Lakeview Light and Power offers a commercial lighting rebate program. Rebates apply to the installation of energy efficient lighting retrofits in non-residential buildings. The rebate program is...

  19. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbell isOklahoma City, USAGE BBQ Center isThe GE

  20. Particle-accelerator constraints on isotropic modifications of the speed of light

    E-Print Network [OSTI]

    Michael A. Hohensee; Ralf Lehnert; David F. Phillips; Ronald L. Walsworth

    2009-04-13T23:59:59.000Z

    The absence of vacuum Cherenkov radiation for 104.5 GeV electrons and positrons at LEP combined with the observed stability of 300 GeV photons at the Tevatron constrains deviations of the speed of light relative to the maximal attainable speed of electrons. Within the Standard-Model Extension (SME), the limit $-5.8\\times10^{-12} \\leq \\tilde{\\kappa}_{\\rm tr}-{4/3}c_e^{00} \\leq 1.2\\times10^{-11}$ is extracted, which sharpens previous bounds by more than 3 orders of magnitude. The potential for further refinements of this limit with terrestrial experiments and astrophysical observations is discussed.

  1. NATIONAL SYNCHROTRON LIGHT SOURCE ACTIVITY REPORT 1998.

    SciTech Connect (OSTI)

    ROTHMAN,E.

    1999-05-01T23:59:59.000Z

    In FY 1998, following the 50th Anniversary Year of Brookhaven National Laboratory, Brookhaven Science Associates became the new Managers of BNL. The new start is an appropriate time to take stock of past achievements and to renew or confirm future goals. During the 1998 NSLS Annual Users Meeting (described in Part 3 of this Activity Report), the DOE Laboratory Operations Board, Chaired by the Under Secretary for Energy, Ernest Moniz met at BNL. By chance all the NSLS Chairmen except Martin Blume (acting NSLS Chair 84-85) were present as recorded in the picture. Under their leadership the NSLS has improved dramatically: (1) The VUV Ring current has increased from 100 mA in October 1982 to nearly 1 A today. For the following few years 10 Ahrs of current were delivered most weeks - NSLS now exceeds that every day. (2) When the first experiments were performed on the X-ray ring during FY1985 the electron energy was 2 GeV and the current up to 100 mA - the X-Ray Ring now runs routinely at 2.5 GeV and at 2.8 GeV with up to 350 mA of current, with a very much longer beam half-life and improved reliability. (3) Starting in FY 1984 the proposal for the Phase II upgrade, mainly for a building extension and a suite of insertion devices and their associated beamlines, was pursued - the promises were delivered in full so that for some years now the NSLS has been running with two undulators in the VUV Ring and three wigglers and an undulator in the X-Ray Ring. In addition two novel insertion devices have been commissioned in the X13 straight. (4) At the start of FY 1998 the NSLS welcomed its 7000th user - attracted by the opportunity for pursuing research with high quality beams, guaranteed not to be interrupted by 'delivery failures', and welcomed by an efficient and caring user office and first class teams of PRT and NSLS staff. R & D have lead to the possibility of running the X-Ray Ring at the higher energy of 2.8 GeV. Figure 1 shows the first user beam, which was provided thereafter for half of the running time in FY 1998. In combination with the development of narrow gap undulators this mode opens the possibility of new undulators which could produce hard X-rays in the fundamental, perhaps up to 10 keV. On 27 September 1998, a low horizontal emittance lattice became operational at 2.584 GeV. This results in approximately a 50% decrease in the horizontal beam-size on dipole bending magnet beamlines, and somewhat less of a decrease on the insertion device lines. The beam lifetime is not degraded by the low emittance lattice. This represents an important achievement, enhancing for all users the x-ray ring brightness. The reduced horizontal emittance electron beam will produce brighter x-ray beams for all the beamlines, both bending magnets and insertion devices, adding to other recent increases in the X-Ray ring brightness. During FY 1999 users will gain experience of the new running mode and plans are in place to do the same at 2.8GeV during further studies sessions. Independent evidence of the reduced emittance is shown in Figure 2. This is a pinhole camera scan showing the X-ray beam profile, obtained on the diagnostic beamline X28. Finally, work has begun to update and refine the proposal of the Phase III upgrade endorsed by the Birgeneau panel and BESAC last year. With the whole NSLS facility in teenage years and with many demonstrated enhancements available, the time has come to herald in the next stage of life at the Light Source.

  2. Green Light Pulse Oximeter

    DOE Patents [OSTI]

    Scharf, John Edward (Oldsmar, FL)

    1998-11-03T23:59:59.000Z

    A reflectance pulse oximeter that determines oxygen saturation of hemoglobin using two sources of electromagnetic radiation in the green optical region, which provides the maximum reflectance pulsation spectrum. The use of green light allows placement of an oximetry probe at central body sites (e.g., wrist, thigh, abdomen, forehead, scalp, and back). Preferably, the two green light sources alternately emit light at 560 nm and 577 nm, respectively, which gives the biggest difference in hemoglobin extinction coefficients between deoxyhemoglobin, RHb, and oxyhemoglobin, HbO.sub.2.

  3. White light velocity interferometer

    DOE Patents [OSTI]

    Erskine, D.J.

    1999-06-08T23:59:59.000Z

    The invention is a technique that allows the use of broadband and incoherent illumination. Although denoted white light velocimetry, this principle can be applied to any wave phenomenon. For the first time, powerful, compact or inexpensive sources can be used for remote target velocimetry. These include flash and arc lamps, light from detonations, pulsed lasers, chirped frequency lasers, and lasers operating simultaneously in several wavelengths. The technique is demonstrated with white light from an incandescent source to measure a target moving at 16 m/s. 41 figs.

  4. Greatly improved interfacial passivation of in-situ high ? dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    SciTech Connect (OSTI)

    Chu, R. L. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2014-05-19T23:59:59.000Z

    A high-quality high-?/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high ? dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5?Å to 1?Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high ? dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-?/Ge interface using the Ge epi-layer approach.

  5. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

    SciTech Connect (OSTI)

    Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-02-25T23:59:59.000Z

    The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

  6. Expected performance of an ideal liquid argon neutrino detector with enhanced sensitivity to scintillation light

    E-Print Network [OSTI]

    M. Sorel

    2014-09-05T23:59:59.000Z

    Scintillation light is used in liquid argon (LAr) neutrino detectors to provide a trigger signal, veto information against cosmic rays, and absolute event timing. In this work, we discuss additional opportunities offered by detectors with enhanced sensitivity to scintillation light, that is with light collection efficiencies of about $10^{-3}$. We focus on two key detector performance indicators for neutrino oscillation physics: calorimetric neutrino energy reconstruction and neutrino/antineutrino separation in a non-magnetized detector. Our results are based on detailed simulations, with neutrino interactions modelled according to the GENIE event generator, while the charge and light responses of a large LAr ideal detector are described by the Geant4 and NEST simulation tools. A neutrino energy resolution as good as 3.3\\% RMS for 4 GeV electron neutrino charged-current interactions can in principle be obtained in a large detector of this type, by using both charge and light information. By exploiting muon capture in argon and scintillation light information to veto muon decay electrons, we also obtain muon neutrino identification efficiencies of about 50\\%, and muon antineutrino misidentification rates at the few percent level, for few-GeV neutrino interactions that are fully contained. We argue that the construction of large LAr detectors with sufficiently high light collection efficiencies is in principle possible.

  7. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect (OSTI)

    Prestat, E., E-mail: eric.prestat@gmail.com; Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A., E-mail: andre.barski@cea.com [INAC, SP2M, CEA and Université Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2014-03-10T23:59:59.000Z

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  8. Axial SiGe Heteronanowire Tunneling Field-Effect Transistors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our...

  9. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  10. Taking on the World's Toughest Problems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    direct write2square The GE Store for Technology is Open for Business 2-4-13-v-3d-printing-medical-devices Invention Factory: How Will The World Get Smaller? ...

  11. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick [University of Texas at Austin; Fredrickson, Kurt [University of Texas at Austin; Posadas, Agham B. [University of Texas at Austin; Ren, Yuan [University of Texas at Austin; Vasudevan, Rama K [ORNL; Okatan, Mahmut Baris [ORNL; Jesse, Stephen [ORNL; Aoki, Toshihiro [Arizona State University; McCartney, Martha [Arizona State University; Smith, David J [Arizona State University; Kalinin, Sergei V [ORNL; Lai, Keji [University of Texas at Austin; Demkov, Alexander A. [University of Texas at Austin

    2015-01-01T23:59:59.000Z

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  12. Direct band gap narrowing in highly doped Ge

    E-Print Network [OSTI]

    Han, Zhaohong

    Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration ...

  13. Growth strategies to control tapering in Ge nanowires

    SciTech Connect (OSTI)

    Periwal, P.; Baron, T., E-mail: thierry.baron@cea.fr; Salem, B.; Bassani, F. [Laboratoire des Technologies de la Microelectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Gentile, P. [SiNaPs Laboratory SP2M, UMR-E, CEA/UJF-Grenoble 1, INAC, 38054 Grenoble (France)

    2014-04-01T23:59:59.000Z

    We report the effect of PH{sub 3} on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400?°C in the presence of PH{sub 3}, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH{sub 3}/GeH{sub 4} ratio causes passivation at NW surface. At high PH{sub 3} concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH{sub 3} flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH{sub 3}-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  14. Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

    E-Print Network [OSTI]

    Kan, Eric Win Hong

    Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...

  15. Discovery of Isotopes of Elements with Z $\\ge$ 100

    E-Print Network [OSTI]

    M. Thoennessen

    2012-03-09T23:59:59.000Z

    Currently, 163 isotopes of elements with Z $\\ge$ 100 have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  16. Ge-on-Si laser operating at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

  17. GE Software Expert Julian Keith Loren Discusses Innovation and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window)...

  18. Technology "Relay Race" Against Cancer | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Scientists in Technology "Relay Race" Against Cancer Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new...

  19. An Update on the Brazil Tech Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    desde meu ultimo update a voces sobre o Centro de Pesquisas da GE no Rio de Janeiro, Brasil e tambm minha terra natal 2011 foi um timo ano para mim. Depois de viver na...

  20. Construction progresses at GE's Oil & Gas Technology Center ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens...

  1. ECS Transactions 3, (7), 1211-1222 (2006) Characterization of Strained Si/SiGe with Raman, Pulsed MOS Capacitor

    E-Print Network [OSTI]

    Schroder, Dieter K.

    2006-01-01T23:59:59.000Z

    ECS Transactions 3, (7), 1211-1222 (2006) 1211 Characterization of Strained Si/SiGe with Raman silicon/relaxed SiGe/graded SiGe/Si samples. The effective generation lifetime depends on the defect defective SiGe. GOI statistical analysis shows worsening oxide breakdown as the Ge concentration in the SiGe

  2. Sandia Energy - (Lighting and) Solid-State Lighting: Science...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the third and upcoming revolution (illumination). Topics cover the basics of light-emitting diode (LED) operation; a 200-year history of lighting technology; the importance of...

  3. Sandia National Laboratories: (Lighting and) Solid-State Lighting...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the third and upcoming revolution (illumination). Topics cover the basics of light-emitting diode (LED) operation; a 200-year history of lighting technology; the importance of...

  4. Columbia Water and Light- HVAC and Lighting Efficiency Rebates

    Broader source: Energy.gov [DOE]

    Columbia Water and Light (CWL) offers rebates to its commercial and industrial customers for the purchase of high efficiency HVAC installations and efficient lighting. Incentives for certain...

  5. Reading Municipal Light Department- Business Lighting Rebate Program

    Broader source: Energy.gov [DOE]

    Reading Municipal Light Department (RMLD) offers incentives for non-residential customers to install energy efficient lights and sensors in existing facilities. In addition to rebates for the...

  6. Peninsula Light Company- Commercial Efficient Lighting Rebate Program

    Broader source: Energy.gov [DOE]

    Peninsula Light Company (PLC) offers a rebate program for commercial customers who wish to upgrade to energy efficient lighting. Participating customers must be served by PLC commercial service....

  7. Light Duty Combustion Research: Advanced Light-Duty Combustion...

    Broader source: Energy.gov (indexed) [DOE]

    duty Diesel Combustion Research Advanced Light-Duty Combustion Experiments Paul Miles Sandia National Laboratories Light-Duty Combustion Modeling Rolf Reitz University of Wisconsin...

  8. Study of plutonium disposition using the GE Advanced Boiling Water Reactor (ABWR)

    SciTech Connect (OSTI)

    NONE

    1994-04-30T23:59:59.000Z

    The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the U.S. to disposition 50 to 100 metric tons of excess of plutonium in parallel with a similar program in Russia. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing long-term diversion resistance to this material. The NAS study {open_quotes}Management and Disposition of Excess Weapons Plutonium{close_quotes} identified light water reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a U.S. disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a 1350 MWe GE Advanced Boiling Water Reactor (ABWR) is utilized to convert the plutonium to spent fuel. The ABWR represents the integration of over 30 years of experience gained worldwide in the design, construction and operation of BWRs. It incorporates advanced features to enhance reliability and safety, minimize waste and reduce worker exposure. For example, the core is never uncovered nor is any operator action required for 72 hours after any design basis accident. Phase 1 of this study was documented in a GE report dated May 13, 1993. DOE`s Phase 1 evaluations cited the ABWR as a proven technical approach for the disposition of plutonium. This Phase 2 study addresses specific areas which the DOE authorized as appropriate for more in-depth evaluations. A separate report addresses the findings relative to the use of existing BWRs to achieve the same goal.

  9. Azimuthal correlations of transverse energy for Pb on Pb at 158 GeV/nucleon

    SciTech Connect (OSTI)

    Wienold, T. [Lawrence Berkeley National Lab., CA (United States); Huang, I. [California Univ., Davis, CA (United States); The NA49 Collaboration

    1996-02-03T23:59:59.000Z

    Azimuthal correlations have been studied in heavy ion reactions over a wide range of beam energies. At low incident energies up to 100 MeV/nucleon where collective effects like the directed sidewards flow are generally small, azimuthal correlations provide a useful tool to determine the reaction plane event by event. In the energy regime of the BEVALAC (up to 1 GeV/nucleon for heavy ions) particular emission patterns, i.e. azimuthal correlations of nucleons and light nuclei with respect to the reaction plane, have been associated with the so called squeeze out and sidesplash effects. These effects are of particular interest because of their sensitivity to the equation of state at the high baryon density which is build up during the collision process. Angular distributions similar to the squeeze out have been observed for pions at the SIS in Darmstadt as well as from the EOS - collaboration. Recently also the sideward flow was measured for pions and kaons. However, the origin of the signal in the case of produced mesons is thought to be of a different nature than that for the nucleon flow. At the AGS, azimuthally anisotropic event shapes have been reported from the E877 collaboration for the highest available heavy ion beam energy (11.4 GeV/nucleon). Using a Fourier analysis of the transverse energy distribution measured in calorimeters, it was concluded that sideward flow is still of significant magnitude. Here we will report a first analysis of azimuthal correlations found in the transverse energy distribution from Pb on Pb collisions at the CERN SPS (158 GeV/nucleon).

  10. Efficient Light Sources Today

    E-Print Network [OSTI]

    Hart, A. L.

    1982-01-01T23:59:59.000Z

    This paper reviews new lamp and lighting technology in terms of application and economic impact. Included are the latest advances in High Intensity Discharge systems, energy saving fluorescent lamps and ballasts, and the new state of the art high...

  11. Natural lighting and skylights

    E-Print Network [OSTI]

    Evans, Benjamin Hampton

    1961-01-01T23:59:59.000Z

    outlined herein, the feasibility of using scale models for studying skylights is also an established fact. The method of analysis by models can be a valuable tool to any designer who is concerned about day-lighting....

  12. National Synchrotron Light Source

    ScienceCinema (OSTI)

    None

    2010-01-08T23:59:59.000Z

    A tour of Brookhaven's National Synchrotron Light Source (NSLS). The NSLS is one of the world's most widely used scientific research facilities, hosting more than 2,500 guest researchers each year. The NSLS provides intense beams of infrared, ultraviole

  13. Light Vector Mesons

    E-Print Network [OSTI]

    Alexander Milov

    2008-12-21T23:59:59.000Z

    This article reviews the current status of experimental results obtained in the measurement of light vector mesons produced in proton-proton and heavy ion collisions at different energies. The review is focused on two phenomena related to the light vector mesons; the modification of the spectral shape in search of Chiral symmetry restoration and suppression of the meson production in heavy ion collisions. The experimental results show that the spectral shape of light vector mesons are modified compared to the parameters measured in vacuum. The nature and the magnitude of the modification depends on the energy density of the media in which they are produced. The suppression patterns of light vector mesons are different from the measurements of other mesons and baryons. The mechanisms responsible for the suppression of the mesons are not yet understood. Systematic comparison of existing experimental results points to the missing data which may help to resolve the problem.

  14. Light and Plants Plants use light to photosynthesize. Name two places that light can come from

    E-Print Network [OSTI]

    Koptur, Suzanne

    Light and Plants Plants use light to photosynthesize. Name two places that light can come from: 1 (CO2, a gas) from the air and turn it into SUGARS (food). This process is powered by energy from light plants) for energy. Photosynthetically Active Radiation (PAR) is a combination of red light and blue

  15. The Jefferson Lab 12 GeV Upgrade

    E-Print Network [OSTI]

    McKeown, R D

    2010-01-01T23:59:59.000Z

    Construction of the 12 GeV upgrade to the Continuous Electron Beam Accelerator Facility (CEBAF) at the Thomas Jefferson National Accelerator Facility is presently underway. This upgrade includes doubling the energy of the electron beam to 12 GeV, the addition of a new fourth experimental hall, and the construction of upgraded detector hardware. An overview of this upgrade project is presented, along with highlights of the anticipated experimental program.

  16. The Jefferson Lab 12 GeV Upgrade

    E-Print Network [OSTI]

    R. D. McKeown

    2010-09-22T23:59:59.000Z

    Construction of the 12 GeV upgrade to the Continuous Electron Beam Accelerator Facility (CEBAF) at the Thomas Jefferson National Accelerator Facility is presently underway. This upgrade includes doubling the energy of the electron beam to 12 GeV, the addition of a new fourth experimental hall, and the construction of upgraded detector hardware. An overview of this upgrade project is presented, along with highlights of the anticipated experimental program.

  17. Light and Energy -Daylight measurements

    E-Print Network [OSTI]

    Light and Energy - Daylight measurements #12;Light and Energy - Daylight measurements Authors: Jens;3 Title Light and Energy Subtitle Daylight measurements Authors Jens Christoffersen, Ɓsta LogadĆ³ttir ........................................................................................................ 5 Daylight quantity

  18. Light as a Healing Mechanism

    E-Print Network [OSTI]

    Lingampalli, Nithya

    2013-01-01T23:59:59.000Z

    S. (1991). Meridians conduct light. Moskow: Raum and Zeit.the bod’ys absorption of light. Explore, 9(2), doi: https://01). The healing use of light and color. Health Care Design

  19. Solid state lighting component

    DOE Patents [OSTI]

    Yuan, Thomas; Keller, Bernd; Ibbetson, James; Tarsa, Eric; Negley, Gerald

    2010-10-26T23:59:59.000Z

    An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.

  20. Solid state lighting component

    DOE Patents [OSTI]

    Keller, Bernd; Ibbetson, James; Tarsa, Eric; Negley, Gerald; Yuan, Thomas

    2012-07-10T23:59:59.000Z

    An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.

  1. AC transport in p-Ge/GeSi quantum well in high magnetic fields

    SciTech Connect (OSTI)

    Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.; Golub, L. E.; Tarasenko, S. A. [A.F. Ioffe Physical Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Suslov, A. V. [National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States); Mironov, O. A. [Warwick SEMINANO R and D Center, University of Warwick Science Park, Coventry CV4 7EZ (United Kingdom); Kummer, M.; Känel, H. von [Laboratorium für Festkörperphysik ETH Zürich, CH-8093 Zürich (Switzerland)

    2014-08-20T23:59:59.000Z

    The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|?4.5. It is shown that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.

  2. July 18, 2012 Using QECBs for Street Lighting Upgrades

    E-Print Network [OSTI]

    lighting technologies (e.g. light-emitting diodes, induction lighting) can reduce street light energy

  3. Novel Higgs-to-125 GeV Higgs boson decays in the complex NMSSM

    E-Print Network [OSTI]

    Shoaib Munir

    2014-05-05T23:59:59.000Z

    In the Next-to-Minimal Supersymmetric Standard Model (NMSSM) a variety of parameter configurations yields a Higgs boson consistent with the one observed at the LHC. Additionally, the Higgs sector of the model can contain explicit CP-violating phases even at the tree level, in contrast with the Minimal Supersymmetric Standard Model (MSSM). In this article we present the one-loop Higgs boson mass matrix of the complex NMSSM in the renormalisation-group-improved effective potential approach. We also present the trilinear Higgs boson self-couplings as well as various partial decay widths of a generic CP-mixed Higgs boson in the model. We then analyse a very interesting phenomenological scenario wherein the decay of a relatively light pseudoscalar-like Higgs boson into ~ 125 GeV SM-like Higgs boson(s) is induced by non-zero CP-violating phases. We discuss in detail a few benchmark cases in which such a decay can contribute significantly to the production of SM-like Higgs bosons at the LHC on top of the gluon fusion process. It can thus be partially responsible for the gamma.gamma excess near 125 GeV due to the subsequent decay of the SM-like Higgs boson. Such a scenario is extremely difficult to realize in the complex MSSM and, if probed at the LHC, it could provide an indication of the non-minimal nature of supersymmetry.

  4. MULTIWAVELENGTH OBSERVATIONS OF GRB 110731A: GeV EMISSION FROM ONSET TO AFTERGLOW

    SciTech Connect (OSTI)

    Ackermann, M. [Deutsches Elektronen Synchrotron DESY, D-15738 Zeuthen (Germany)] [Deutsches Elektronen Synchrotron DESY, D-15738 Zeuthen (Germany); Ajello, M.; Blandford, R. D.; Borgland, A. W.; Bottacini, E.; Buehler, R.; Cameron, R. A. [W. W. Hansen Experimental Physics Laboratory, Kavli Institute for Particle Astrophysics and Cosmology, Department of Physics and SLAC National Accelerator Laboratory, Stanford University, Stanford, CA 94305 (United States)] [W. W. Hansen Experimental Physics Laboratory, Kavli Institute for Particle Astrophysics and Cosmology, Department of Physics and SLAC National Accelerator Laboratory, Stanford University, Stanford, CA 94305 (United States); Asano, K. [Interactive Research Center of Science, Tokyo Institute of Technology, Meguro City, Tokyo 152-8551 (Japan)] [Interactive Research Center of Science, Tokyo Institute of Technology, Meguro City, Tokyo 152-8551 (Japan); Baldini, L.; Bellazzini, R.; Bregeon, J. [Istituto Nazionale di Fisica Nucleare, Sezione di Pisa, I-56127 Pisa (Italy)] [Istituto Nazionale di Fisica Nucleare, Sezione di Pisa, I-56127 Pisa (Italy); Barbiellini, G. [Istituto Nazionale di Fisica Nucleare, Sezione di Trieste, I-34127 Trieste (Italy)] [Istituto Nazionale di Fisica Nucleare, Sezione di Trieste, I-34127 Trieste (Italy); Baring, M. G. [Department of Physics and Astronomy, Rice University, MS-108, P.O. Box 1892, Houston, TX 77251 (United States)] [Department of Physics and Astronomy, Rice University, MS-108, P.O. Box 1892, Houston, TX 77251 (United States); Bastieri, D.; Buson, S. [Istituto Nazionale di Fisica Nucleare, Sezione di Padova, I-35131 Padova (Italy)] [Istituto Nazionale di Fisica Nucleare, Sezione di Padova, I-35131 Padova (Italy); Bonamente, E. [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, I-06123 Perugia (Italy)] [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, I-06123 Perugia (Italy); Brigida, M. [Dipartimento di Fisica 'M. Merlin' dell'Universita e del Politecnico di Bari, I-70126 Bari (Italy)] [Dipartimento di Fisica 'M. Merlin' dell'Universita e del Politecnico di Bari, I-70126 Bari (Italy); Bruel, P. [Laboratoire Leprince-Ringuet, Ecole polytechnique, CNRS/IN2P3, Palaiseau (France)] [Laboratoire Leprince-Ringuet, Ecole polytechnique, CNRS/IN2P3, Palaiseau (France); Caliandro, G. A. [Institut de Ciencies de l'Espai (IEEE-CSIC), Campus UAB, E-08193 Barcelona (Spain)] [Institut de Ciencies de l'Espai (IEEE-CSIC), Campus UAB, E-08193 Barcelona (Spain); Caraveo, P. A., E-mail: kocevski@slac.stanford.edu, E-mail: giacomov@slac.stanford.edu, E-mail: johan.bregeon@pi.infn.it, E-mail: srazzaque@ssd5.nrl.navy.mil, E-mail: eleonora.troja@nasa.gov, E-mail: dgruber@mpe.mpg.de [INAF-Istituto di Astrofisica Spaziale e Fisica Cosmica, I-20133 Milano (Italy); and others

    2013-02-15T23:59:59.000Z

    We report on the multiwavelength observations of the bright, long gamma-ray burst GRB 110731A, by the Fermi and Swift observatories, and by the MOA and GROND optical telescopes. The analysis of the prompt phase reveals that GRB 110731A shares many features with bright Large Area Telescope bursts observed by Fermi during the first three years on-orbit: a light curve with short time variability across the whole energy range during the prompt phase, delayed onset of the emission above 100 MeV, extra power-law component and temporally extended high-energy emission. In addition, this is the first GRB for which simultaneous GeV, X-ray, and optical data are available over multiple epochs beginning just after the trigger time and extending for more than 800 s, allowing temporal and spectral analysis in different epochs that favor emission from the forward shock in a wind-type medium. The observed temporally extended GeV emission is most likely part of the high-energy end of the afterglow emission. Both the single-zone pair transparency constraint for the prompt signal and the spectral and temporal analysis of the forward-shock afterglow emission independently lead to an estimate of the bulk Lorentz factor of the jet {Gamma} {approx} 500-550.

  5. Multiwavelength observations of GRB 110731A: GeV emission from onset to afterglow

    E-Print Network [OSTI]

    ,

    2012-01-01T23:59:59.000Z

    We report on the multiwavelength observations of the bright, long gamma-ray burst \\GRB, by the \\Fermi and \\Swift observatories, and by the MOA and GROND optical telescopes. The analysis of the prompt phase reveals that \\GRB shares many features with bright Large Area Telescope bursts observed by \\Fermi during the first 3 years on-orbit: a light curve with short time variability across the whole energy range during the prompt phase, delayed onset of the emission above 100 MeV, extra power law component and temporally extended high-energy emission. In addition, this the first GRB for which simultaneous GeV, X-ray, and optical data are available over multiple epochs beginning just after the trigger time and extending for more than 800 s, allowing temporal and spectral analysis in different epochs that favor emission from the forward shock in a wind-type medium. The observed temporally extended GeV emission is most likely part of the high-energy end of the afterglow emission. Both the single-zone pair transparenc...

  6. Members of a workshop at the tenth IAYC Conference, July 7, 2006 1. ge -hak -te le -ber, ge -fil -te -fish: sha-bes iz a far -ge -ni -gn

    E-Print Network [OSTI]

    Finkel, Raphael

    A SUDE Members of a workshop at the tenth IAYC Conference, July 7, 2006 = 90 4 4 1. ge - hak - te le - ber, ge - fil - te - fish: sha- bes iz a far - ge - ni - gn 2. kha - le gri - vn, ku - gl yoykh: ku - men on di ma - khe - to - nem. 3. shtru - dl, tsi - mes, zi - se kalte: a su - de vos men vet ge

  7. Co silicide formation on SiGeC/Si and SiGe/Si layers R. A. Donatona)

    E-Print Network [OSTI]

    on the total strain energy in the layer and restricts the applications where high Ge concentrations are needed spectrometry, secondary ion mass spectroscopy SIMS , and four point probe for sheet resistance measure- ments

  8. Production and Testing Experience with the SRF Cavities for the CEBAF 12 GeV Upgrade

    SciTech Connect (OSTI)

    A. Burrill, G.K. Davis, F. Marhauser, C.E. Reece, A.V. Reilly, M. Stirbet

    2011-09-01T23:59:59.000Z

    The CEBAF recirculating CW electron linear accelerator at Jefferson Lab is presently undergoing a major upgrade to 12 GeV. This project includes the fabrication, preparation, and testing of 80 new 7-cell SRF cavities, followed by their incorporation into ten new cryomodules for subsequent testing and installation. In order to maximize the cavity Q over the full operable dynamic range in CEBAF (as high as 25 MV/m), the decision was taken to apply a streamlined preparation process that includes a final light temperature-controlled electropolish of the rf surface over the vendor-provided bulk BCP etch. Cavity processing work began at JLab in September 2010 and will continue through December 2011. The excellent performance results are exceeding project requirements and indicate a fabrication and preparation process that is stable and well controlled. The cavity production and performance experience to date will be summarized and lessons learned reported to the community.

  9. GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change Pathway Today's Date to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours OR ____ I am a Pathway student, and I would like

  10. College of Engineering Partner Schools Australia Melbourne University, Melbourne GE3*

    E-Print Network [OSTI]

    Lee, Tonghun

    College of Engineering Partner Schools Australia Melbourne University, Melbourne ­ GE3* University of New South Wales, New South Wales ­ GE3* Austria Technical University of Vienna, Vienna - GE3* Chile Universidad del Bio Bio, Concepcion China Xiamen University, Xiamen ­ GE3* Denmark Aalborg University, Aalborg

  11. On the Comparison of Fisher Information of the Weibull and GE Distributions

    E-Print Network [OSTI]

    Kundu, Debasis

    On the Comparison of Fisher Information of the Weibull and GE Distributions Rameshwar D. Gupta exponen- tial (GE) and Weibull distributions for complete and Type-I censored observations. Fisher is much more than the GE distribution. We compute the total information of the Weibull and GE

  12. C-band side-entry Ge quantum-well electroabsorption modulator on SOI

    E-Print Network [OSTI]

    Miller, David A. B.

    C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing J. Modulation was due to the quantum-confined Stark effect from ten Ge/SiGe quantum wells epitaxially grown the totally internally reflecting air-SiGe interface and a frustrated total internal reflection from

  13. University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS

    E-Print Network [OSTI]

    © University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE and characterization of SiGe/Si superlattice coolers are described. Superlattice structures were used to enhance for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature

  14. Strain Relaxation of SiGe on Compliant BPSG and Its Applications

    E-Print Network [OSTI]

    Strain Relaxation of SiGe on Compliant BPSG and Its Applications Haizhou Yin A DISSERTATION of SiGe on compliant borophosphosilicate glass (BPSG). Through modeling and experiments it has been shown that strain relaxation in the SiGe film can be induced by lateral expansion and buckling of the SiGe

  15. OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng

    E-Print Network [OSTI]

    Deng, Xunming

    OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR CELLS Xunming Deng Department cells, all employing high- quality a-SiGe cells, are reviewed in this paper. Incorporating various improvements in device fabrication, the UT group fabricated 1) triple-junction a-Si/a-SiGe/a- SiGe solar cells

  16. SiGe virtual substrate HMOS transistor for analogue applications K. Michelakisa,*

    E-Print Network [OSTI]

    Papavassiliou, Christos

    SiGe virtual substrate HMOS transistor for analogue applications K. Michelakisa,* , S Abstract Silicon­germanium (SiGe) heterojunction metal-oxide-semiconductor field-effect transistors (SiGe design. The results suggest that the realisation of buried-channel SiGe n-HMOSFETs is feasible in MOS

  17. SiGe-On-Insulator (SGOI): Two Structures for CMOS Application

    E-Print Network [OSTI]

    SiGe-On-Insulator (SGOI): Two Structures for CMOS Application Zhiyuan Cheng,a) Jongwan Jung, b Massachusetts Avenue, Cambridge, MA 02141 a) E-mail: cheng@alum.MIT.EDU Abstract ­ Two SiGe-on-insulator (SGOI enhancement on both electron and hole mobilities. Keywords ­ strained-Si, SiGe, SiGe-on-Insulator, SGOI

  18. Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)

    SciTech Connect (OSTI)

    Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

    2013-09-30T23:59:59.000Z

    We investigate the growth of self-assembled Ge nanostructures on top of embedded Ge nanowires on Si(001) substrates. Ge nanostructures, such as nanodashes, nanodumbbells, and dot chains are observed simply by tuning the growth temperature and thickness of the Si spacer between the Ge layers. The self-assembly process is governed by the surface strain fields generated by the embedded Ge nanowires and is well-described by our theoretical calculations. The catalyst-free and horizontal growth of such Ge nanostructures directly on Si(001) is attractive for investigating exotic transport properties through Si/Ge-based quantum devices.

  19. Background p(450 GeV/c)-p,d (NA51)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    #12;#12;Background ' Open charm J / Drell-Yan #12;* p(450 GeV/c)-p,d (NA51) 208 16 p(200 Ge) 32 p(450 GeV/c)-A (A=C,Al,Cu,W) (NA38) 10101 10101010 652 3 4 B targetprojectile B(J/)/(AB)(nb) 5 4 3 Pb(208x158 GeV/c)-Pb (NA50) S(32x200 GeV/c)-U (NA38) p(200 GeV/c)-W (NA38) p(450 GeV/c)-A (A=p,d) (NA

  20. Sandia National Laboratories: White Light Creation Architectures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Light Creation Architectures White Light Creation Architectures Overview of SSL White Light Creation Architectures The entire spectral range of visible light can be...

  1. Sandia National Laboratories: Lighting Developments to 2030

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ClimateLighting Developments to 2030 Lighting Developments to 2030 videobanner Lighting Technologies, Costs, and Energy Demand: Global Developments to 2030 V iew Slides: Lighting...

  2. Photoluminescence and positron annihilation spectroscopy investigation of (Ge, Er) codoped Si oxides deposited by magnetron sputtering

    SciTech Connect (OSTI)

    Heng, C. L.; Chelomentsev, E.; Peng, Z. L.; Mascher, P. [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4K1 (Canada); Simpson, P. J. [Department of Physics and Astronomy, University of Western Ontario, London, Ontario N6A 3K7 (Canada)

    2009-01-01T23:59:59.000Z

    We have investigated the nature of violet-blue emission from (Ge, Er) codoped Si oxides (Ge+Er+SiO{sub 2}) using photoluminescence (PL) and positron annihilation spectroscopy (PAS) measurements. The PL spectra and PAS analysis for a control Ge-doped SiO{sub 2} (Ge+SiO{sub 2}) indicate that Ge-associated neutral oxygen vacancies (Ge-NOV) are likely responsible for the major emission in the violet-blue band. For Ge+Er+SiO{sub 2}, both Ge-NOV and GeO color centers are believed to be responsible for the emission band. The addition of Er has a significant influence on the emission, which is discussed in terms of Er-concentration-related structural change in the Ge+Er+SiO{sub 2}.

  3. Interior Light Level Measurements Appendix F -Interior Light Level Measurements

    E-Print Network [OSTI]

    Appendix F ­ Interior Light Level Measurements #12;F.1 Appendix F - Interior Light Level. A potential concern is that a lower VT glazing may increase electric lighting use to compensate for lost qualify and quantify a representative loss of daylighting, and therefore electric lighting use

  4. Quasi light fields: extending the light field to coherent radiation

    E-Print Network [OSTI]

    Wornell, Gregory W.

    Quasi light fields: extending the light field to coherent radiation Anthony Accardi1,2 and Gregory light field, and for coherent radiation using electromagnetic field theory. We present a model of coherent image formation that strikes a balance between the utility of the light field

  5. Lighting affects appearance LightSource emits photons

    E-Print Network [OSTI]

    Jacobs, David

    1 Lighting affects appearance #12;2 LightSource emits photons Photons travel in a straight line). And then some reach the eye/camera. #12;3 Basic fact: Light is linear Double intensity of sources, double photons reaching eye. Turn on two lights, and photons reaching eye are same as sum of number when each

  6. Smart Lighting: A Second Wave in Solid State Lighting?

    E-Print Network [OSTI]

    Salama, Khaled

    Smart Lighting: A Second Wave in Solid State Lighting? OIDA Conference on Green Photonics Bob Karlicek Director, Smart Lighting Engineering Research Center Rensselaer Polytechnic Institute June 2010 #12;2 Outline · The First Wave of Solid State Lighting · Complex Dynamics in the Supply Chain · What

  7. Valley splitting in Si quantum dots embedded in SiGe S. Srinivasan,1,2

    E-Print Network [OSTI]

    Rokhinson, Leonid

    Valley splitting in Si quantum dots embedded in SiGe S. Srinivasan,1,2 G. Klimeck,1,2 and L. P subband.4 Recently, calculations predicted that valley splitting in nar- row few nanometers SiGe/Si/SiGe that prediction, which has been explained12 by the disorders of the Si/SiGe interface and in the SiGe buffer

  8. Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate

    E-Print Network [OSTI]

    , and SiGe virtual substrate V. K. Yang, S. M. Ting, M. E. Groenert, M. T. Bulsara, M. T. Currie, C. W efficiency of InGaAs quantum wells on Si via SiGe interlayers, identical In0.2Ga0.8As quantum well structures metalorganic vapor deposition system. The substrates used include GaAs, Si, Ge, and SiGe virtual substrates

  9. Light-Ion-Induced Multifragmentation: The ISiS Project

    E-Print Network [OSTI]

    V. E. Viola

    2006-04-20T23:59:59.000Z

    An extensive study of GeV light-ion-induced multifragmentation and its possible interpretation in terms of a nuclear liquid-gas phase transition has been performed with the Indiana Silicon Sphere (ISiS)4 pi detector array. Measurements were performed with 5-15 GeV/c p, pbar, and pion beams incident on $^{197}$Au and 2-5 GeV $^3$He incident on $^{nat}$Ag and $^{197}$Au targets. Both the reaction dynamics and the subsequent decay of the heavy residues have been explored. The data provide evidence for a dramatic change in the reaction observables near an excitation energy of E*/A = 4-5 MeV per residue nucleon. In this region, fragment multiplicities and energy spectra indicate emission from an expanded/dilute source on a very short time scale (20-50 fm/c). These properties, along with caloric curve and scaling-law behavior, yield a pattern that is consistent with a nuclear liquid-gas phase transition.

  10. Solar neutrino physics: Sensitivity to light dark matter particles

    E-Print Network [OSTI]

    Ilidio Lopes; Joseph Silk

    2013-09-29T23:59:59.000Z

    Neutrinos are produced in several neutrino nuclear reactions of the proton-proton chain and carbon-nitrogen-oxygen cycle that take place at different radius of the Sun's core. Hence, measurements of solar neutrino fluxes provide a precise determination of the local temperature. The accumulation of non-annihilating light dark matter particles (with masses between 5 GeV and 16 GeV in the Sun produces a change in the local solar structure, namely, a decrease in the central temperature of a few percent. This variation depends on the properties of the dark matter particles, such as the mass of the particle and its spin-independent scattering cross-section on baryon-nuclei, specifically, the scattering with helium, oxygen, and nitrogen among other heavy elements. This temperature effect can be measured in almost all solar neutrino fluxes. In particular, by comparing the neutrino fluxes generated by stellar models with current observations, namely 8B neutrino fluxes, we find that non-annihilating dark matter particles with a mass smaller than 10 GeV and a spin-independent scattering cross-section with heavy baryon-nuclei larger than 3 x 10^{-37} cm^-2 produce a variation in the 8B neutrino fluxes that would be in conflict with current measurements.

  11. Pupillary efficient lighting system

    DOE Patents [OSTI]

    Berman, Samuel M. (San Francisco, CA); Jewett, Don L. (Mill Valley, CA)

    1991-01-01T23:59:59.000Z

    A lighting system having at least two independent lighting subsystems each with a different ratio of scotopic illumination to photopic illumination. The radiant energy in the visible region of the spectrum of the lighting subsystems can be adjusted relative to each other so that the total scotopic illumination of the combined system and the total photopic illumination of the combined system can be varied independently. The dilation or contraction of the pupil of an eye is controlled by the level of scotopic illumination and because the scotopic and photopic illumination can be separately controlled, the system allows the pupil size to be varied independently of the level of photopic illumination. Hence, the vision process can be improved for a given level of photopic illumination.

  12. Light emitting ceramic device

    DOE Patents [OSTI]

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18T23:59:59.000Z

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  13. Light harvesting arrays

    DOE Patents [OSTI]

    Lindsey, Jonathan S. (Raleigh, NC)

    2002-01-01T23:59:59.000Z

    A light harvesting array useful for the manufacture of devices such as solar cells comprises: (a) a first substrate comprising a first electrode; and (b) a layer of light harvesting rods electrically coupled to the first electrode, each of the light harvesting rods comprising a polymer of Formula I: X.sup.1.paren open-st.X.sup.m+1).sub.m (I) wherein m is at least 1, and may be from two, three or four to 20 or more; X.sup.1 is a charge separation group (and preferably a porphyrinic macrocycle, which may be one ligand of a double-decker sandwich compound) having an excited-state of energy equal to or lower than that of X.sup.2, and X.sup.2 through X.sup.m+1 are chromophores (and again are preferably porphyrinic macrocycles).

  14. Fermi LAT Observations of LS I +61 303: First Detection of an Orbital Modulation in GeV Gamma Rays

    SciTech Connect (OSTI)

    Abdo, A.A.; /Federal City Coll. /Naval Research Lab, Wash., D.C.; Ackermann, M.; /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept.; Ajello, M.; /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept.; Atwood, W.B.; /UC, Santa Cruz; Axelsson, M.; /Stockholm U., OKC /Stockholm U.; Baldini, L.; /INFN, Pisa; Ballet, J.; /DAPNIA, Saclay; Barbiellini, G.; /INFN, Trieste /Trieste U.; Bastieri, D.; /INFN, Padua /Padua U.; Baughman, B.M.; /Ohio State U.; Bechtol, K.; /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept.; Bellazzini, R.; /INFN, Pisa; Berenji, B.; /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept.; Blandford, R.; /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept.; Bloom, E.D.; /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept.; Bonamente, E.; /INFN, Perugia /Perugia U.; Borgland, A.W.; /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept.; Bregeon, J.; /INFN, Pisa; Brez, A.; /INFN, Pisa; Brigida, M.; /Bari U. /INFN, Bari; Bruel, P.; /Ecole Polytechnique /Washington U., Seattle /Bari U. /INFN, Bari /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept. /IASF, Milan /Milan Polytechnic /DAPNIA, Saclay /ASDC, Frascati /INFN, Perugia /Perugia U. /NASA, Goddard /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept. /DAPNIA, Saclay /Naval Research Lab, Wash., D.C. /George Mason U. /NASA, Goddard /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept. /INFN, Perugia /Perugia U. /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept. /Montpellier U. /Sonoma State U. /Stockholm U., OKC /Royal Inst. Tech., Stockholm /Stockholm U. /DAPNIA, Saclay /NASA, Goddard /CSST, Baltimore /ASDC, Frascati /Naval Research Lab, Wash., D.C. /INFN, Trieste /Pavia U. /Bari U. /INFN, Bari /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept. /UC, Santa Cruz /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept. /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept. /SLAC /Stanford U., HEPL /KIPAC, Menlo Park /Stanford U., Phys. Dept. /Grenoble, CEN; /more authors..

    2012-04-02T23:59:59.000Z

    This Letter presents the first results from the observations of LS I +61{sup o}303 using Large Area Telescope data from the Fermi Gamma-Ray Space Telescope between 2008 August and 2009 March. Our results indicate variability that is consistent with the binary period, with the emission being modulated at 26.6 {+-} 0.5 days. This constitutes the first detection of orbital periodicity in high-energy gamma rays (20 MeV-100 GeV, HE). The light curve is characterized by a broad peak after periastron, as well as a smaller peak just before apastron. The spectrum is best represented by a power law with an exponential cutoff, yielding an overall flux above 100 MeV of 0.82 {+-} 0.03(stat) {+-} 0.07(syst) 10{sup -6} ph cm{sup -2} s{sup -1}, with a cutoff at 6.3 {+-} 1.1(stat) {+-} 0.4(syst) GeV and photon index {Gamma} = 2.21 {+-} 0.04(stat) {+-} 0.06(syst). There is no significant spectral change with orbital phase. The phase of maximum emission, close to periastron, hints at inverse Compton scattering as the main radiation mechanism. However, previous very high-energy gamma ray (>100 GeV, VHE) observations by MAGIC and VERITAS show peak emission close to apastron. This and the energy cutoff seen with Fermi suggest that the link between HE and VHE gamma rays is nontrivial.

  15. MANDATORY MEASURES INDOOR LIGHTING CONTROLS

    E-Print Network [OSTI]

    California at Davis, University of

    MANDATORY MEASURES INDOOR LIGHTING CONTROLS (Reference: Sub-Chapter 4, Section 130.1) #12;SECTION 4 MANDATORY LIGHTING CONTROLS 1. 130.1 (a) Area Controls: Manual controls that control lighting in each area separately 2. 130.1 (b) Multi-level Controls: Allow occupants to choose the appropriate light level for each

  16. MANDATORY MEASURES INDOOR LIGHTING CONTROLS

    E-Print Network [OSTI]

    California at Davis, University of

    MANDATORY MEASURES INDOOR LIGHTING CONTROLS (Reference: Sub-Chapter 4, Section 130.1) #12;SECTION 3 MANDATORY LIGHTING CONTROLS 1. 130.1 (a) Area Controls: Manual controls that control lighting in each area separately 2. 130.1 (b) Multi-level Controls: "Dimmability." Allow occupants to choose the appropriate light

  17. MANDATORY MEASURES INDOOR LIGHTING CONTROLS

    E-Print Network [OSTI]

    California at Davis, University of

    MANDATORY MEASURES INDOOR LIGHTING CONTROLS (Reference: Sub-Chapter 4, Section 130.1) #12;SECTION 5 MANDATORY LIGHTING CONTROLS 1. Area Controls: Manual controls that control lighting in each area separately 2. Multi-level Controls: Allow occupants to choose the appropriate light level for each area 3. Shut

  18. LIGHTING 101 1. Common terminology

    E-Print Network [OSTI]

    California at Davis, University of

    SECTION 3 LIGHTING 101 1. Common terminology 2. Sources & luminaires 3. Controls #12;SECTION 3SECTION 3 DISCUSSION: COMMON LIGHTING TERMINOLOGY 1. What are the definitions of the following lighting terms? 2. Do you use these terms in professional practice? 3. What other lighting terminology do you use

  19. LIGHTING 101 1. Common terminology

    E-Print Network [OSTI]

    California at Davis, University of

    LIGHTING 101 1. Common terminology 2. Sources and luminaires 3. Controls #12;SECTION 2 DISCUSSION: COMMON LIGHTING TERMINOLOGY 1. What are the definitions of the following lighting terms? 2. Do you use these terms in professional practice? 3. What other lighting terminology do you use on the job? SLIDE 14

  20. Radioluminescent lighting technology

    SciTech Connect (OSTI)

    Not Available

    1990-01-01T23:59:59.000Z

    The glow-in-the-dark stereotype that characterizes the popular image of nuclear materials is not accidental. When the French scientist, Henri Becquerel, first discovered radioactivity in 1896, he was interested in luminescence. Radioluminescence, the production of light from a mixture of energetic and passive materials, is probably the oldest practical application of the unstable nucleus. Tritium-based radioluminescent lighting, in spite of the biologically favorable character of the gaseous tritium isotope, was included in the general tightening of environmental and safety regulations. Tritium light manufacturers would have to meet two fundamental conditions: (1) The benefit clearly outweighed the risk, to the extent that even the perceived risk of a skeptical public would be overcome. (2) The need was significant enough that the customer/user would be willing and able to afford the cost of regulation that was imposed both in the manufacture, use and eventual disposal of nuclear materials. In 1981, researchers at Oak Ridge National Laboratory were investigating larger radioluminescent applications using byproduct nuclear material such as krypton-85, as well as tritium. By 1982, it appeared that large source, (100 Curies or more) tritium gas tube, lights might be useful for marking runways and drop zones for military operations and perhaps even special civilian aviation applications. The successful development of this idea depended on making the light bright enough and demonstrating that large gas tube sources could be used and maintained safely in the environment. This successful DOE program is now in the process of being completed and closed-out. Working closely with the tritium light industry, State governments and other Federal agencies, the basic program goals have been achieved. This is a detailed report of what they have learned, proven, and discovered. 91 refs., 29 figs., 5 tabs. (JF)

  1. TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

    E-Print Network [OSTI]

    Chew, Han Guan

    Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO?) system have been studied based on the Ge content of co-sputtered Ge-SiO? films using transmission electron microscopy (TEM) and X-ray ...

  2. SU4 light stop signature analysis at ATLAS

    SciTech Connect (OSTI)

    Krstic, Jelena; Milosavljevic, Marija; Popovic, Dragan [Institute of Physics, Belgrade (Serbia and Montenegro)

    2007-04-23T23:59:59.000Z

    A possibility to observe light stop signal above the Standard Model background was analysed for SU4 low mass SUSY model. With a production cross section of 270 pb, SU4 seems to be a promising target for SUSY searches with early ATLAS data. In order to extract a light stop signal from the decay g-tilde {yields} t-tilde{sub 1}t {yields} {chi}-tilde{sub 1}{sup {+-}}tb the final state tb invariant mass distribution was reconstructed. A kinematic endpoint was observed at a position close to the expected value for this decay chain which is 300 GeV. By establishing proper event selection criteria SM backgrounds can be suppressed to the level S/B > 4 with only 200 pb-1 of data. The analysis was performed on fully simulated ATLAS data.

  3. The Development of the Linac Coherent Light Source RF Gun

    E-Print Network [OSTI]

    Dowell, David H; Lewandowski, James; Limborg-Deprey, Cecile; Li, Zenghai; Schmerge, John; Vlieks, Arnold; Wang, Juwen; Xiao, Liling

    2015-01-01T23:59:59.000Z

    The Linac Coherent Light Source (LCLS) is the first x-ray laser user facility based upon a free electron laser (FEL). In addition to many other stringent requirements, the LCLS XFEL requires extraordinary beam quality to saturate at 1.5 angstroms within a 100 meter undulator.[1] This new light source is using the last kilometer of the three kilometer linac at SLAC to accelerate the beam to an energy as high as 13.6 GeV and required a new electron gun and injector to produce a very bright beam for acceleration. At the outset of the project it was recognized that existing RF guns had the potential to produce the desired beam but none had demonstrated it. This paper describes the analysis and design improvements of the BNL/SLAC/UCLA s-band gun leading to achievement of the LCLS performance goals.

  4. Towards the Light Front Variables for High Energy Production Processes

    E-Print Network [OSTI]

    N. S. Amaglobeli; S. M. Esakia; V. R. Garsevanishvili; G. O. Kuratashvili; N. K. Kutsidi; R. A. Kvatadze; Yu V. Tevzadze; T. P. Topuria

    1997-03-21T23:59:59.000Z

    Scale invariant presentation of inclusive spectra in terms of light front variables is proposed. The variables introduced go over to the well-known scaling variables x_F = 2p_z/sqrt(s) and x_T=2p_T/sqrt{s} in the high p_z and high p_T limits respectively. So Some surface is found in the phase space of produced pi-mesons in the inclusive reaction anti p p -> pi+- X at 22.4 GeV/c, which separates two groups of particles with significantly different characteristics. In one of these regions a naive statistical model seems to be in a good agreement with data, whereas it fails in the second region. Key words: Light front, inclusive, hadron-hadron, electron-positron, relativistic heavy ions, deep inelastic.

  5. Dark Sectors and New, Light, Weakly-Coupled Particles

    E-Print Network [OSTI]

    Essig, R; Wester, W; Adrian, P Hansson; Andreas, S; Averett, T; Baker, O; Batell, B; Battaglieri, M; Beacham, J; Beranek, T; Bjorken, J D; Bossi, F; Boyce, J R; Cates, G D; Celentano, A; Chou, A S; Cowan, R; Curciarello, F; Davoudiasl, H; deNiverville, P; De Vita, R; Denig, A; Dharmapalan, R; Dongwi, B; Döbrich, B; Echenard, B; Espriu, D; Fegan, S; Fisher, P; Franklin, G B; Gasparian, A; Gershtein, Y; Graham, M; Graham, P W; Haas, A; Hatzikoutelis, A; Holtrop, M; Irastorza, I; Izaguirre, E; Jaeckel, J; Kahn, Y; Kalantarians, N; Kohl, M; Krnjaic, G; Kubarovsky, V; Lee, H-S; Lindner, A; Lobanov, A; Marciano, W J; Marsh, D J E; Maruyama, T; McKeen, D; Merkel, H; Moffeit, K; Monaghan, P; Mueller, G; Nelson, T K; Neil, G R; Oriunno, M; Pavlovic, Z; Phillips, S K; Pivovaroff, M J; Poltis, R; Pospelov, M; Rajendran, S; Redondo, J; Ringwald, A; Ritz, A; Ruz, J; Saenboonruang, K; Schuster, P; Shinn, M; Slatyer, T R; Steffen, J H; Stepanyan, S; Tanner, D B; Thaler, J; Tobar, M E; Toro, N; Upadye, A; Van de Water, R; Vlahovic, B; Vogel, J K; Walker, D; Weltman, A; Wojtsekhowski, B; Zhang, S; Zioutas, K

    2013-01-01T23:59:59.000Z

    Dark sectors, consisting of new, light, weakly-coupled particles that do not interact with the known strong, weak, or electromagnetic forces, are a particularly compelling possibility for new physics. Nature may contain numerous dark sectors, each with their own beautiful structure, distinct particles, and forces. This review summarizes the physics motivation for dark sectors and the exciting opportunities for experimental exploration. It is the summary of the Intensity Frontier subgroup "New, Light, Weakly-coupled Particles" of the Community Summer Study 2013 (Snowmass). We discuss axions, which solve the strong CP problem and are an excellent dark matter candidate, and their generalization to axion-like particles. We also review dark photons and other dark-sector particles, including sub-GeV dark matter, which are theoretically natural, provide for dark matter candidates or new dark matter interactions, and could resolve outstanding puzzles in particle and astro-particle physics. In many cases, the explorat...

  6. Windows and lighting program

    SciTech Connect (OSTI)

    Not Available

    1990-06-01T23:59:59.000Z

    More than 30% of all energy use in buildings is attributable to two sources: windows and lighting. Together they account for annual consumer energy expenditures of more than $50 billion. Each affects not only energy use by other major building systems, but also comfort and productivity -- factors that influence building economics far more than does direct energy consumption alone. Windows play a unique role in the building envelope, physically separating the conditioned space from the world outside without sacrificing vital visual contact. Throughout the indoor environment, lighting systems facilitate a variety of tasks associated with a wide range of visual requirements while defining the luminous qualities of the indoor environment. Windows and lighting are thus essential components of any comprehensive building science program. Despite important achievements in reducing building energy consumption over the past decade, significant additional savings are still possible. These will come from two complementary strategies: (1) improve building designs so that they effectively apply existing technologies and extend the market penetration of these technologies; and (2) develop advanced technologies that increase the savings potential of each application. Both the Windows and Daylighting Group and the Lighting System Research Group have made substantial contributions in each of these areas, and continue to do so through the ongoing research summarized here. 23 refs., 16 figs.

  7. AIRPORT LIGHTING Session Highlights

    E-Print Network [OSTI]

    Minnesota, University of

    Administration advisory circulars, available online at www.faa.gov or by mail at the following address: Federal Aviation Administration, Airports 800 Independence Ave. S.W. Washington, D.C. 20591 To qualify for federal AND NAVIGATIONAL AIDS A complete list of federal regulations for airfield lighting is located in Federal Aviation

  8. Tokyo Street Lights

    E-Print Network [OSTI]

    Hacker, Randi; Tsutsui, William

    2008-03-12T23:59:59.000Z

    that you have only 17, no 16, no 15 seconds left to get to the other side before the light changes and the impatient American drivers put the pedal to the metal and it's road kill time. Talk about stress! In Tokyo, crossing the street is a leisurely...

  9. Sweetness and light 

    E-Print Network [OSTI]

    Craig, Katie

    2014-07-03T23:59:59.000Z

    1. Sweetness and Light. A novel. Judi lives in a nice, clean house with her seventeen year old stepson, who won’t talk to her in anything but monosyllables. His father, Nelson, and she are struggling to relate to each ...

  10. Jefferson Lab 12 GeV CEBAF Upgrade

    SciTech Connect (OSTI)

    Claus Rode

    2010-04-01T23:59:59.000Z

    The existing continuous electron beam accelerator facility (CEBAF) at Thomas Jefferson National Accelerator Facility (TJNAF) is a 5-pass, recirculating cw electron Linac operating at ~6 GeV and is devoted to basic research in nuclear physics. The 12 GeV CEBAF Upgrade is a $310 M project, sponsored by the Department of Energy (DOE) Office of Nuclear Physics, that will expand its research capabilities substantially by doubling the maximum energy and adding major new experimental apparatus. The project received construction approval in September 2008 and has started the major procurement process. The cryogenic aspects of the 12 GeV CEBAF Upgrade includes: doubling the accelerating voltages of the Linacs by adding ten new high-performance, superconducting radiofrequency (SRF) cryomodules (CMs) to the existing 42 1/4 cryomodules; doubling of the 2 K cryogenics plant; and the addition of eight superconducting magnets.

  11. S5 0716+714 : GeV variability study

    E-Print Network [OSTI]

    Rani, B; Lott, B; Fuhrmann, L; Zensus, J A

    2013-01-01T23:59:59.000Z

    The GeV observations by Fermi-LAT give us the opportunity to characterize the high-energy emission (100 MeV - 300 GeV) variability properties of the BL Lac object S5 0716+714. In this study, we performed flux and spectral analysis of more than 3 year long (August 2008 to April 2012) Fermi-LAT data of the source. During this period, the source exhibits two different modes of flux variability with characteristic timescales of ~75 and ~140 days, respectively. We also notice that the flux variations are characterized by a weak spectral hardening. The GeV spectrum of the source shows a clear deviation from a simple power law, and is better explained by a broken power law. Similar to other bright Fermi blazars, the break energy does not vary with the source flux during the different activity states. We discuss several possible scenarios to explain the observed spectral break.

  12. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J. [University of Connecticut, JLAB

    2015-01-01T23:59:59.000Z

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  13. Spin Structure with JLab 6 and 12 GeV

    SciTech Connect (OSTI)

    Jian-Ping Chen

    2012-02-01T23:59:59.000Z

    Highlights of JLab 6 GeV results on spin structure study and plan for 12 GeV program. Spin structure study is full of surprises and puzzles. A decade of experiments from JLab yield these exciting results: (1) valence spin structure; (2) precision measurements of g{sub 2}/d{sub 2} - high-twist; (3) spin sum rules and polarizabilities; and (4) first neutron transversity. There is a bright future as the 12 GeV Upgrade will greatly enhance our capability: (1) Precision determination of the valence quark spin structure flavor separation; (2) Precision measurements of g{sub 2}/d{sub 2}; and (3) Precision extraction of transversity/tensor charge.

  14. Reducing 68Ge Background in Dark Matter Experiments

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Orrell, John L.

    2011-03-01T23:59:59.000Z

    Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

  15. Higgs Discovery in the Presence of Light CP-Odd Scalars

    SciTech Connect (OSTI)

    Lisanti, Mariangela; Wacker, Jay G.; /SLAC /Stanford U., Phys. Dept.

    2009-06-19T23:59:59.000Z

    Many models of electroweak symmetry breaking have an additional light pseudoscalar. If the Higgs boson can decay to a new pseudoscalar, LEP searches for the Higgs can be significantly altered and the Higgs can be as light as 86 GeV. Discovering the Higgs boson in these models is challenging when the pseudoscalar is lighter than 10 GeV because it decays dominantly into tau leptons. In this paper, we discuss discovering the Higgs in a subdominant decay mode where one of the pseudoscalars decays to a pair of muons. This search allows for potential discovery of a cascade-decaying Higgs boson with the complete Tevatron data set or early data at the LHC.

  16. Material and device characterization toward high-efficiency GaAs solar cells on optical-grade polycrystalline Ge substrates

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; Malta, D.P.; Timmons, M.L.; Posthill, J.B.; Hutchby, J.A. [Research Triangle Inst., Research Triangle Park, NC (United States); Ahrenkiel, R.; Keyes, B.; Wangensteen, T. [National Renewable Energy Lab., Golden, CO (United States)

    1994-12-31T23:59:59.000Z

    In this work, the authors present a detailed characterization of the material and device properties of GaAs materials grown on optical-grade poly-Ge substrates. Although the minority-carrier lifetime of the starting optical-grade polycrystalline Ge substrate is about a factor of 8 less than that measured in single-crystal electronic-grade Ge, the minority carrier lifetime in GaAs-AlGaAs double-hetero (DH) structures grown on these two substrates were about comparable. C-V measurements on poly-GaAs p{sup +}n junctions indicate negligible role of grain-boundaries in majority-carrier trapping and also that no compensating deep levels were introduced into the n-GaAs active layers from the optical-grade substrates. The polycrystalline GaAs p{sup +}-n junctions were evaluated by dark In I-V measurements and the authors observed that there is a considerable variation of the saturation dark current density (within a factor of ten) of diodes located in various grains. The performance of the poly p{sup +}n GaAs cells is improved by the introduction of an undoped spacer in the p{sup +}-n junction. Diode I-V data of p{sup +}-n GaAs junctions, grown with this spacer, show a factor of near 100 reduction in diode saturation dark-current density. The reduction in dark current is believed to be associated with the reduction of tunneling currents in the depletion-layer of the p{sup +}-n junction in polycrystalline materials. Since the series resistance of the lightly-doped substrate is presently limiting the efficiency of large-area cells, efforts are underway to develop GaAs solar cells on more heavily-doped poly-Ge substrates.

  17. Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

    SciTech Connect (OSTI)

    Gunasekera, K.; Boolchand, P. [School of Electronics and Computing Systems, College of Engineering and Applied Science, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Micoulaut, M., E-mail: mmi@lptl.jussieu.fr [Laboratoire de Physique Théorique de la Matičre Condensée, Université Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France)

    2014-04-28T23:59:59.000Z

    Amorphous Ge{sub x}Si{sub x}Te{sub 1?2x} glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions x{sub c1}=7.5% and Ge, Si) are increased. The structural manifestation of these anomalies is understood from ?{sup 119}Sn Mössbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge{sub 20}Te{sub 80}, Si{sub 20}Te{sub 80}, and Ge{sub 10}Si{sub 10}Te{sub 80}). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp{sup 3} geometry, whereas Mössbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x??8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

  18. Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy

    SciTech Connect (OSTI)

    Ali, Dyan; Richardson, Christopher J. K. [Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740 (United States)

    2012-11-15T23:59:59.000Z

    The authors present a study on the thermal evolution of the reflection high-energy electron diffraction pattern of chemically cleaned (001)-oriented Si, Ge, and SiGe surfaces, associating observed changes in the reconstructions with the desorption of known residual contaminants for Si and Ge surfaces. The implications of residual oxides prior to epitaxy on stacking fault densities in the grown films are presented. Further evidence for the two-phase nature of oxides on SiGe surfaces is provided, demonstrating that it is necessary to heat a SiGe surface up to the thermal deoxidation temperature of a Si surface to obtain stacking fault-free growth.

  19. (Sr,Ba)(Si,Ge){sub 2} for thin-film solar-cell applications: First-principles study

    SciTech Connect (OSTI)

    Kumar, Mukesh, E-mail: Kumar.Mukesh@nims.go.jp, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan); TU-NIMS Joint Research Center, School of Materials Science and Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin (China); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

    2014-05-28T23:59:59.000Z

    In order to meet the increasing demand for electric power generation from solar energy conversion, the development of efficient light absorber materials has been awaited. To this end, the electronic and optical properties of advanced alkaline-earth-metals disilicides and digermanides (SrSi{sub 2}, BaSi{sub 2}, SrGe{sub 2}, and BaGe{sub 2}) are studied by means of the density functional theory using HSE06 exchange-correlation energy functional. Our calculations show that all these orthorhombic structured compounds have fundamental indirect band gaps in the range E{sub g} ? 0.89–1.25 eV, which is suitable for solar cell applications. The estimated lattice parameters and band gaps are in good agreement with experiments. Our calculations show that the electronic band structures of all four compounds are very similar except in the vicinity of the ?-point. The valence band of these compounds is made up by Si(Ge)-p states, whereas the conduction band is composed of Sr(Ba)-d states. Their band alignments are carefully determined by estimating the work function of each compound using slab model. The optical properties are discussed in terms of the complex dielectric function ?(?)?=??{sub 1}(?)?+?i?{sub 2}(?). The static and high-frequency dielectric constants are calculated, taking into account the ionic contribution. The absorption coefficient ?(?) demonstrates that a low energy dispersion of the conduction band, which results in a flat conduction band minimum, leads to large optical activity in these compounds. Therefore, alkaline-earth-metals disilicides and digermanides possess great potential as light absorbers for applications in thin-film solar cell technologies.

  20. C incorporation in epitaxial Ge1yCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D'Arcy-Gall, and J. E. Greene

    E-Print Network [OSTI]

    Gall, Daniel

    C incorporation in epitaxial Ge1ĄyCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D lattice site configurations in fully coherent Ge1 yCy layers grown on Ge 001 . Calculations using strained configuration involving only one C atom per configura- tion. The bond-centered interstitial and the Ge-C split

  1. EBIC characterization of strained Si/SiGe heterostructures

    SciTech Connect (OSTI)

    Yakimov, E. B. [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)], E-mail: yakimov@ipmt-hpm.ac.ru; Zhang, R. H.; Rozgonyi, G. A. [North Carolina State University, Department of Materials Science and Engineering (United States); Seacrist, M. [MEMC Electronic Materials (United States)

    2007-04-15T23:59:59.000Z

    Strained-Si/SiGe heterostructure is studied by EBIC. The effect of annealing at 800 deg. C is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on E{sub b}. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play the role of such defects.

  2. Superposed Coherent and Squeezed Light

    E-Print Network [OSTI]

    Fesseha Kassahun

    2012-01-18T23:59:59.000Z

    We first calculate the mean photon number and quadrature variance of superposed coherent and squeezed light, following a procedure of analysis based on combining the Hamiltonians and using the usual definition for the quadrature variance of superposed light beams. This procedure of analysis leads to physically unjustifiable mean photon number of the coherent light and quadrature variance of the superposed light. We then determine both of these properties employing a procedure of analysis based on superposing the Q functions and applying a slightly modified definition for the quadrature variance of a pair of superposed light beams. We find the expected mean photon number of the coherent light and the quadrature variance of the superposed light. Moreover, the quadrature squeezing of the superposed output light turns out to be equal to that of the superposed cavity light.

  3. Direct band gap optical emission from Ge islands grown on relaxed Si{sub 0.5}Ge{sub 0.5}/Si (100) substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2014-01-07T23:59:59.000Z

    Strained Ge islands have been grown on fully relaxed Si{sub 0.5}Ge{sub 0.5} substrate by pulsed laser ablation technique. The formation of strained Ge islands has been found for film with higher thickness following Stranski–Krastanov growth mechanism. The variation of strain with changing Ge layer thickness has been analyzed using Raman spectroscopy and high-resolution X-ray diffraction techniques. X-ray photoelectron spectra have shown the absence of any Si-Ge intermixing and oxidation of Ge films. A strong no-phonon photoluminescence emission from Ge islands has been observed, showing the superior optical characteristics of the islands grown on relaxed substrate.

  4. INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS

    E-Print Network [OSTI]

    INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS SRIKANTH B and Engineering, University of California, Los Angeles, CA 90095. ABSTRACT Relaxed graded Si-Ge/Si layers can of these applications requires a different final Ge concentration in the graded Si-Ge layer. With increasing Ge content

  5. GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change ­ General English of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take ______________________________________________ Date _________________ #12;GE & AE Extension Request Form, Version 11, Feb 2013, JC Please submit

  6. Transformations in Lighting: The Ninth Annual Solid-State Lighting...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    in DOE's "Transformations in Lighting" Solid-State Lighting (SSL) R&D Workshop. DOE SSL Portfolio Manager James Brodrick kicked off Day 1 by observing that although LED...

  7. National Synchrotron Light Source 2008 Activity Report

    SciTech Connect (OSTI)

    Nasta,K.

    2009-05-01T23:59:59.000Z

    Funded by the U.S. Department of Energy's Office of Basic Energy Sciences, the National Synchrotron Light Source (NSLS) is a national user facility that operates two electron storage rings: X-Ray (2.8 GeV, 300 mA) and Vacuum Ultraviolet (VUV) (800 mev, 1.0A). These two rings provide intense light spanning the electromagnetic spectrum -- from very long infrared rays to ultraviolet light and super-short x-rays -- to analyze very small or highly dilute samples. The properties of this light, and the specially designed experimental stations, called beamlines, allow scientists in many diverse disciplines of research to perform experiments not possible at their own laboratories. Each year, about 2,200 scientists from more than 400 universities and companies use the NSLS for research in such diverse fields as biology, physics, chemistry, geology, medicine, and environmental and materials sciences. For example, researchers have used the NSLS to examine the minute details of computer chips, decipher the structures of viruses, probe the density of bone, determine the chemical composition of moon rocks, and reveal countless other mysteries of science. The facility has 65 operating beamlines, with 51 beamlines on the X-Ray Ring and 14 beamlines on the VUV-Infrared Ring. It runs seven days a week, 24 hours a day throughout the year, except during periods of maintenance and studies. Researchers are not charged for beam time, provided that the research results are published in open literature. Proprietary research is conducted on a full-cost-recovery basis. With close to 1,000 publications per year, the NSLS is one of the most prolific scientific facilities in the world. Among the many accolades given to its users and staff, the NSLS has won nine R&D 100 Awards for innovations ranging from a closed orbit feedback system to the first device able to focus a large spread of high-energy x-rays. In addition, a visiting NSLS researcher shared the 2003 Nobel Prize in Chemistry for work explaining how one class of proteins helps to generate nerve impulses.

  8. Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers

    SciTech Connect (OSTI)

    Valakh, M. Ya.; Lytvyn, P. M.; Nikolenko, A. S.; Strelchuk, V. V. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv (Ukraine); Krasilnik, Z. F.; Lobanov, D. N.; Novikov, A. V. [Institute for Physics of Microstructures, RAS, GSP-105, Nizhny Novgorod 603950 (Russian Federation)

    2010-04-05T23:59:59.000Z

    Raman spectroscopy and atomic-force microscopy were applied to study the morphology of nanoislands grown on strained Si{sub 1-x}Ge{sub x} sublayers. It was shown that the growth of nanoislands on strained Si{sub 1-x}Ge{sub x} sublayer not only induces the effect of their spatial ordering but also enhances the role of interdiffusion processes. Unusual high island volume increase during the epitaxy is explained by anomalous strong material diffusion from the sublayer into the islands, induced by nonuniform field of elastic strains.

  9. Light cone matrix product

    SciTech Connect (OSTI)

    Hastings, Matthew B [Los Alamos National Laboratory

    2009-01-01T23:59:59.000Z

    We show how to combine the light-cone and matrix product algorithms to simulate quantum systems far from equilibrium for long times. For the case of the XXZ spin chain at {Delta} = 0.5, we simulate to a time of {approx} 22.5. While part of the long simulation time is due to the use of the light-cone method, we also describe a modification of the infinite time-evolving bond decimation algorithm with improved numerical stability, and we describe how to incorporate symmetry into this algorithm. While statistical sampling error means that we are not yet able to make a definite statement, the behavior of the simulation at long times indicates the appearance of either 'revivals' in the order parameter as predicted by Hastings and Levitov (e-print arXiv:0806.4283) or of a distinct shoulder in the decay of the order parameter.

  10. Nonequilibrium lighting plasmas

    SciTech Connect (OSTI)

    Dakin, J.T. (GE Lighting, Nela Park, Cleveland, OH (US))

    1991-12-01T23:59:59.000Z

    In this paper the science of a variety of devices employing nonequilibrium lighting plasmas is reviewed. The devices include the fluorescent lamp, the low-pressure sodium lamp, the neon sign, ultraviolet lamps, glow indicators, and a variety of devices used by spectroscopists, such as the hollow cathode light source. The plasma conditions in representative commercial devices are described. Recent research on the electron gas, the role of heavy particles, spatial and temporal inhomogeneities, and new electrodeless excitation schemes is reviewed. Areas of future activity are expected to be in new applications of high-frequency electronics to commercial devices, new laser-based diagnostics of plasma conditions, and more sophisticated models requiring more reliable and extensive rate coefficient data.

  11. Scattering Of Light Nuclei

    SciTech Connect (OSTI)

    Quaglioni, S; Navratil, P; Roth, R

    2009-12-15T23:59:59.000Z

    The exact treatment of nuclei starting from the constituent nucleons and the fundamental interactions among them has been a long-standing goal in nuclear physics. Above all nuclear scattering and reactions, which require the solution of the many-body quantum-mechanical problem in the continuum, represent an extraordinary theoretical as well as computational challenge for ab initio approaches.We present a new ab initio many-body approach which derives from the combination of the ab initio no-core shell model with the resonating-group method [4]. By complementing a microscopic cluster technique with the use of realistic interactions, and a microscopic and consistent description of the nucleon clusters, this approach is capable of describing simultaneously both bound and scattering states in light nuclei. We will discuss applications to neutron and proton scattering on sand light p-shell nuclei using realistic nucleon-nucleon potentials, and outline the progress toward the treatment of more complex reactions.

  12. Fusion pumped light source

    DOE Patents [OSTI]

    Pappas, Daniel S. (Los Alamos, NM)

    1989-01-01T23:59:59.000Z

    Apparatus is provided for generating energy in the form of light radiation. A fusion reactor is provided for generating a long, or continuous, pulse of high-energy neutrons. The neutron flux is coupled directly with the lasing medium. The lasing medium includes a first component selected from Group O of the periodic table of the elements and having a high inelastic scattering cross section. Gamma radiation from the inelastic scattering reactions interacts with the first component to excite the first component, which decays by photon emission at a first output wavelength. The first output wavelength may be shifted to a second output wavelength using a second liquid component responsive to the first output wavelength. The light outputs may be converted to a coherent laser output by incorporating conventional optics adjacent the laser medium.

  13. Solar light bulb

    SciTech Connect (OSTI)

    Smith, D.A.

    1983-07-26T23:59:59.000Z

    A system for generating light directly using solar energy is provided herein. It includes a concentrator and accumulator for the sun's rays to generate a concentrated beam of visible solar radiation. A distributor shaft is provided for distributing the beam of visible solar radiation. A fork is provided in the distributor shaft to define a plurality of branch lines, each provided with a mirror at the intersection to direct the beam down the respective branch line to permit parallel fractions of the beam to be reflected off the respective mirrors and to pass down the respective branch line. A solar bulb is provided including a double walled upper bulbous portion including the inlet from the branch line and a pair of heat outlet tubes, and a double walled lower bulbous portion, the upper portion thereof being divergently reflective, with the lower portion having walls which are either transparent or translucent to provide greater light diffusion, and the space between the two walls being maintained under vacuum to provide heat insulation values. A structure is provided within the solar bulb for the absorption and radiation of the concentrated beam of visible solar radiation. Preferably structure is provided connected to the solar bulb to draw in outside air in the summer to direct it past the solar bulb and to air vent hot air produced at the solar bulb to the outside, thereby providing light with minimal heat in the summer. The same structure is operated in the winter to draw in household air to direct it past the solar bulb and to recirculate such heated air produced at the solar bulb to the house, thereby providing light and heat in the winter.

  14. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01T23:59:59.000Z

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  15. Nucleon Form Factors experiments with 12 GeV CEBAF

    SciTech Connect (OSTI)

    Wojtsekhowski, Bogdan

    2008-11-01T23:59:59.000Z

    A number of precision form factor experiments at high momentum transfer will be performed with the 11 GeV electron beam of CEBAF. We review the approved proposals and the conceptual schemes of several new suggestions. Form factor data will serve as a major input for the construction of a tomographic image of the nucleon.

  16. GeV C. W. electron microtron design report

    SciTech Connect (OSTI)

    Not Available

    1982-05-01T23:59:59.000Z

    Rising interest in the nuclear physics community in a GeV C.W. electron accelerator reflects the growing importance of high-resolution short-range nuclear physics to future advances in the field. In this report major current problems are reviewed and the details of prospective measurements which could be made with a GeV C.W. electron facility are discussed, together with their impact on an understanding of nuclear forces and the structure of nuclear matter. The microtron accelerator has been chosen as the technology to generate the electron beams required for the research discussed because of the advantages of superior beam quality, low capital and operating cost and capability of furnishing beams of several energies and intensities simultaneously. A complete technical description of the conceptual design for a 2 GeV double-sided C.W. electron microtron is presented. The accelerator can furnish three beams with independently controlled energy and intensity. The maximum current per beam is 100 ..mu..amps. Although the precise objective for maximum beam energy is still a subject of debate, the design developed in this study provides the base technology for microtron accelerators at higher energies (2 to 6 GeV) using multi-sided geometries.

  17. Structural Changes in Vitreous GeSe4 under Pressure

    SciTech Connect (OSTI)

    Skinner L. B.; Parise J.; Benmore, C.J,; Antao, S.; Soignard, E.; Amin, S.A.; Bychkov, E.; Rissi, E. and Yarger, J.L.

    2011-11-21T23:59:59.000Z

    High-energy X-ray diffraction experiments have been performed on GeSe{sub 4} glass up to pressures of 8.6 GPa, and the equation of state has been measured up to 10 GPa. The X-ray structure factors reveal a decrease in the first sharp diffraction peak intensity and broadening with pressure, which signifies a break-up of the intermediate range order in the glass. In contrast, the principal peak in the structure factor shows an increase in intensity and a sharpening with pressure, which is attributed to an increase in extended range order and coherence of the compacted units. The average nearest neighbor coordination number is found to remain constant in GeSe{sub 4} glass (within experimental error) over the pressure range measured. This is in contrast with the gradual increase found in GeSe{sub 2} glass. Rather, in GeSe{sub 4} glass the densification mechanism is shown to be associated with large inward shifts of the second neighbor and higher coordination shells. These features appear as additional correlations at 3.3 and 5.3 {angstrom} in the differences taken between adjacent pair distribution functions with increasing pressure.

  18. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H. [JLAB

    2013-12-01T23:59:59.000Z

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  19. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01T23:59:59.000Z

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  20. Demonstration of 2nd Generation Ducted GE "Brillion" Hybrid Water

    E-Print Network [OSTI]

    sharing partners. #12;Project Synopsis Evaluate the performance and demand response (DR) of the Gen II GE/frequency response) in the PNW and nationwide (Lu et al, 2011; Diao et al 2012) The demand response characteristics Participants Project Sponsors: DOE Building America Program/Bonneville Power Administration Contractor: PNNL

  1. Turbo-Charged Lighting Design

    E-Print Network [OSTI]

    Clark, W. H. II

    TURBO-CHARGED LIGHTING DESIGN William H. Clark II Design Engineer O'Connell Robertson & Assoc Austin/ Texas ABSTRACT The task of the lighting designer has become very complex, involving thousands of choices for fixture types and hundreds...

  2. Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

    E-Print Network [OSTI]

    Teherani, James T.

    Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantum-mechanical ...

  3. Webinar: Fuel Cell Mobile Lighting

    Broader source: Energy.gov [DOE]

    Video recording of the Fuel Cell Technologies Office webinar, Fuel Cell Mobile Lighting, originally presented on November 13, 2012.

  4. Faster than Light Quantum Communication

    E-Print Network [OSTI]

    A. Y. Shiekh

    2008-04-05T23:59:59.000Z

    Faster than light communication might be possible using the collapse of the quantum wave-function without any accompanying paradoxes.

  5. MANDATORY MEASURES OUTDOOR LIGHTING CONTROLS

    E-Print Network [OSTI]

    California at Davis, University of

    MANDATORY MEASURES OUTDOOR LIGHTING CONTROLS (Reference: Sub-Chapter 4, Section 130.2) #12;SECTION level of each multi-tier garage. Ā· General lighting must have occupant sensing controls with at least one control step between 20% and 50% of design lighting power Ā· No more than 500 watts of rated

  6. MANDATORY MEASURES OUTDOOR LIGHTING CONTROLS

    E-Print Network [OSTI]

    California at Davis, University of

    MANDATORY MEASURES OUTDOOR LIGHTING CONTROLS (Reference: Sub-Chapter 4, Section 130.2) #12;SECTION 5 Additions and Alterations Any alteration that increases the connected lighting load must meet all No measures required OUTDOOR LIGHTING11/20/2014 #12;SECTION 5 BACKLIGHT, UPLIGHT, AND GLARE (BUG) RATINGS

  7. STATE OF CALIFORNIA RESIDENTIAL LIGHTING

    E-Print Network [OSTI]

    STATE OF CALIFORNIA RESIDENTIAL LIGHTING CEC-CF-6R-LTG-01 (Revised 08/09) CALIFORNIA ENERGY COMMISSION INSTALLATION CERTIFICATE CF-6R-LTG-01 Residential Lighting (Page 1 of 6) Site Address: Enforcement Agency: Permit Number: 2008 Residential Compliance Forms August 2009 1. Kitchen Lighting Does project

  8. Arnold Schwarzenegger, LIGHTING RESEARCH PROGRAM

    E-Print Network [OSTI]

    ;#12;Prepared By: Lighting Research Center Andrew Bierman, Project Lead Troy, New York 12180 Managed ByArnold Schwarzenegger, Governor LIGHTING RESEARCH PROGRAM PROJECT 3.2 ENERGY EFFICIENT LOAD- SHEDDING LIGHTING TECHNOLOGY Prepared For: California Energy Commission Public Interest Energy Research

  9. Slow-light solitons revisited

    E-Print Network [OSTI]

    A. V. Rybin; I. P. Vadeiko; A. R. Bishop

    2006-08-16T23:59:59.000Z

    We investigate propagation of slow-light solitons in atomic media described by the nonlinear $\\Lambda$-model. Under a physical assumption, appropriate to the slow light propagation, we reduce the $\\Lambda$-scheme to a simplified nonlinear model, which is also relevant to 2D dilatonic gravity. Exact solutions describing various regimes of stopping slow-light solitons can then be readily derived.

  10. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect (OSTI)

    Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

    2014-08-26T23:59:59.000Z

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  11. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01T23:59:59.000Z

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  12. Precision Studies of Light Mesons at COMPASS

    E-Print Network [OSTI]

    Bernhard Ketzer; for the COMPASS Collaboration

    2014-03-19T23:59:59.000Z

    The COMPASS experiment at CERN's SPS investigates the structure and excitations of strongly interacting systems. Using reactions of 190 GeV/c pions with protons and nuclear targets, mediated by the strong and electromagnetic interaction, an unprecedented statistical precision has been reached allowing new insight into the properties of light mesons. For the first time the diffractively produced 3pi final state has been analyzed simultaneously in bins of invariant mass and four-momentum transfer using a large set of 88 waves up to a total angular momentum of 6. In addition to a precise determination of the properties of known resonances and including a model-indepedent analysis of the pi pi S-wave isobar, a new narrow axial-vector state coupling strongly to f0(980)pi has been found in previously unchartered territory. By selecting reactions with very small four-momentum transfer COMPASS is able to study processes involving the exchange of quasi-real photons. These provide clean access to low-energy quantities such as radiative couplings and polarizabilities of mesons, and thus constitute a test of model predictions such as chiral perturbation theory.

  13. Adsorption of alkali metals on Ge(001)(2×1) surface. |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    alkali metals on Ge(001)(2×1) surface. Adsorption of alkali metals on Ge(001)(2×1) surface. Abstract: Ab initio total energy calculations have been performed for Na, K...

  14. Large inherent optical gain from the direct gap transition of Ge thin films

    E-Print Network [OSTI]

    Wang, Xiaoxin

    The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

  15. Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications

    E-Print Network [OSTI]

    Bai, Yu, Ph.D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic ...

  16. GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd...

    Open Energy Info (EERE)

    GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd Kvaerner Hangfa Jump to: navigation, search Name: GE Hydro Asia Co Ltd (formerly Kvaerner Power Equipment Co., Ltd...

  17. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01T23:59:59.000Z

    group-IV-based dilute magnetic semiconductors by electronicMn x Ge 1-x dilute magnetic semiconductor”, Applied Physicsamorphous Ge 1-x Mn x magnetic semiconductor films”, Journal

  18. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  19. $J/?$, $?(2S)$ Production in pp Collisions at E=510 GeV

    E-Print Network [OSTI]

    Leonard S. Kisslinger; Debasish Das

    2014-10-06T23:59:59.000Z

    This brief report is an extension of studies of $J/\\Psi,\\Psi(2S)$ production in pp collisions at the BNL with E=$\\sqrt{s}$=200 GeV to E=510 GeV at PHENIX.

  20. Postdoctoral Positions: Si/SiGe Quantum Dots and Quantum Computing Eriksson Group

    E-Print Network [OSTI]

    Saffman, Mark

    Postdoctoral Positions: Si/SiGe Quantum Dots and Quantum Computing Eriksson Group Department in the area of Si/SiGe quantum dots and quantum computing. Recent advances in our group include single

  1. Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

    SciTech Connect (OSTI)

    Kanno, Hiroshi; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)

    2006-10-30T23:59:59.000Z

    Metal-induced lateral crystallization (MILC) of amorphous SiGe films on SiO{sub 2} has been investigated as a function of Ge fraction (0%-100%) and annealing temperature (320-550 deg. C). High temperature annealing (>500 deg. C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400 deg. C). As a result, large poly-SiGe regions (>20 {mu}m) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%-100%)

  2. Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications

    E-Print Network [OSTI]

    Goh, Johnathan Jian Ming

    2006-01-01T23:59:59.000Z

    This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

  3. Electron Backscatter Diffraction of a Ge Growth Tip from a Vertical...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of a Ge Growth Tip from a Vertical Gradient Freeze Furnace. Electron Backscatter Diffraction of a Ge Growth Tip from a Vertical Gradient Freeze Furnace. Abstract: The growth-tip...

  4. LIFETIME AND RADIATIVE EFFICIENCY VS DENSITY IN THE STRAIN-CONFINED ELECTRON-HOLE LIQUID IN Ge

    E-Print Network [OSTI]

    Kelso, Susan M.

    2011-01-01T23:59:59.000Z

    electron-hole liquid (SCEHL) in Ge. Sample CR50 was T = 1.9CONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and JohnCONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and John

  5. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    E-Print Network [OSTI]

    Pan, Hsuan-yu

    2010-01-01T23:59:59.000Z

    1.1 SiGe BiCMOS Technology . . . . . . .A Linear-in-dB SiGe HBT Wideband High Dynamic Range RFpower dissapation trade-off between Si BJTs and SiGe HBTs [

  6. Ris-M-2737 ' / > ^ ' ' . / , / -THE PHASES OF Pb/Ge(lll)

    E-Print Network [OSTI]

    #12;Risų-M-2737 ' / > ^ ' ' . / , / - THE PHASES OF Pb/Ge(lll): A SURFACE X-RAY DIFFRACTION STUDY of a chemisorbed overlayer of Pb on the Ge(lll) surface. Three phases of Pb/Ge(lll) exist in the monolayer regime: the a- and B-phases with a V3xV3R30° unit cell, and a high-temperature IX1 phase. In the 1X1 phase of Pb/Ge

  7. Directional correlation of [gamma] transitions in [sup 72]Ge following the decay of [sup 72]Ga

    SciTech Connect (OSTI)

    Landulfo, E.; Saxena, R.N.; Zamboni, C.B.; Lapolli, A.L. (Instituto de Pesquisas Energeticas e Nucleares, IPEN-Comissao Nacional de Energia Nuclear de Brasil, Sao Paulo, Sao Paulo (Brazil))

    1994-08-01T23:59:59.000Z

    Directional correlations of coincident gamma transitions in [sup 72]Ge have been measured following the [beta][sup [minus

  8. MECHANICS OF RELAXING SiGe ISLANDS ON A VISCOUS GLASS , J. Liang1

    E-Print Network [OSTI]

    Suo, Zhigang

    MECHANICS OF RELAXING SiGe ISLANDS ON A VISCOUS GLASS R. Huang1 , H. Yin2 , J. Liang1 , J.C. Sturm2, a SiGe thin film, a glass layer, and a Si wafer. The SiGe film is a perfect crystal, and is under biaxial compression. Pattern the SiGe film into islands. On annealing, the glass flows and the islands

  9. Sandia National Laboratories: efficient LED lighting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Partnership, Research & Capabilities, Solid-State Lighting Solid state lighting (SSL), which uses light-emitting diodes (LEDs), has the potential to be 10 times more energy...

  10. Sandia National Laboratories: Light Creation Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    TechnologiesLight Creation Materials Light Creation Materials Overview of SSL Light Creation Materials Different families of inorganic semiconductor materials can...

  11. Ecological Consequences of Artificial Night Lighting

    E-Print Network [OSTI]

    Piselli, Kathy

    2006-01-01T23:59:59.000Z

    of Artificial Night Lighting Catherine Rich and Travisof artificial night lighting. This book provides editedage of modern urban lighting was ushered in. Coincidentally,

  12. Sandia National Laboratories: Solid-State Lighting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lighting Developments to 2030 On July 30, 2012, in Lighting Technologies, Costs, and Energy Demand: Global Developments to 2030 View Slides: Lighting Technologies, Costs, and...

  13. LIGHTING CONTROLS: SURVEY OF MARKET POTENTIAL

    E-Print Network [OSTI]

    Verderber, R.R.

    2010-01-01T23:59:59.000Z

    REFERENCES Task Report to Lighting Systems Research,Berkeley Laboratory, "Lighting Control System Market1980). Task Report to Lighting Systems Research, Lawrence

  14. Demand Responsive Lighting: A Scoping Study

    E-Print Network [OSTI]

    Rubinstein, Francis; Kiliccote, Sila

    2007-01-01T23:59:59.000Z

    3 3.0 Previous Experience with Demand Responsive Lighting11 4.3. Prevalence of Lighting13 4.4. Impact of Title 24 on Lighting

  15. Municipal Consortium LED Street Lighting Workshop Presentations...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    National Association of Energy Services Companies Calculating Light Loss Factors for Solid-State Lighting Systems Chad Stalker, Philips Lumileds Lighting Intro to MSSLC's...

  16. Light propagation and Imaging in Indefinite Metamaterials

    E-Print Network [OSTI]

    Yao, Jie

    2010-01-01T23:59:59.000Z

    photolithography by polarized light,” Applied PhysicsZhang, “Imaging visible light using anisotropic metamaterialcross-sectional review of the light propagation of TE mode (

  17. Advances in Lighting

    E-Print Network [OSTI]

    Tumber, A. J.

    1981-01-01T23:59:59.000Z

    colour rendition. The quartz-halogen incandescent lam s operate at higher temperatures, and have a somewhat higher efficacy, but they are rarely used except for special applicati ns. 3-2 High Intensity Discharge Lamps. Mercury is the grandfather... of the H.I.D. lamps. Its blue-green light, has been used almost exclusively for streetlighti and, often with colour-improving phospho it is still being used in industrial and commercial applications. Reactor-type ballasted mercury lamps can now...

  18. Pedestrian Friendly Outdoor Lighting

    SciTech Connect (OSTI)

    Miller, Naomi J.; Koltai, Rita; McGowan, Terry

    2013-12-31T23:59:59.000Z

    This GATEWAY report discusses the problems of pedestrian lighting that occur with all technologies with a focus on the unique optical options and opportunities offered by LEDs through the findings from two pedestrian-focused projects, one at Stanford University in California, and one at the Chautauqua Institution in upstate New York. Incorporating user feedback this report reviews the tradeoffs that must be weighed among visual comfort, color, visibility, efficacy and other factors to stimulate discussion among specifiers, users, energy specialists, and in industry in hopes that new approaches, metrics, and standards can be developed to support pedestrian-focused communities, while reducing energy use.

  19. Lighting Test Facilities

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5Let us countLighting Sign In About

  20. Lighting | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup |Jilin ZhongdiantouLichuan City Yujiang River ValleyLighting

  1. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R. [JLAB

    2014-02-01T23:59:59.000Z

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  2. 2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a

    E-Print Network [OSTI]

    Athens, University of

    2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a , M.A. Savelonas a , D. Maroulis a , M of protein spots in 2D-GE images. The proposed scheme incorporates a protein spot detection stage based both software packages in terms of segmentation performance. Index Terms--2D-GE Images, Protein Spot

  3. Surface Science Letters Self-assembled growth of ordered Ge nanoclusters on

    E-Print Network [OSTI]

    Gao, Hongjun

    Surface Science Letters Self-assembled growth of ordered Ge nanoclusters on the Si(1 1 1)-(7 Ā 7-assembled growth of submonolayer Ge on the Si(1 1 1)-(7 Ā 7) surface grown by solid phase epitaxy has been studied using scanning tunneling microscopy. Ordered Ge nanoclusters on the surface are formed by the deposition

  4. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01T23:59:59.000Z

    Mn-Si (red squares) and Mn-Ge distances (blue circles) d asof the number of Si or Ge nearest neighbours N c ; (c) localthree Mn atoms with different N c in a-Mn 0.094 Ge 0.906 .

  5. Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays

    E-Print Network [OSTI]

    Javey, Ali

    Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays Yu-Lun Chueh,,§,|,# Zhiyong, ROC ABSTRACT Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays

  6. Defects in Ge and Si caused by 1 MeV Si+ implantation*

    E-Print Network [OSTI]

    Florida, University of

    Defects in Ge and Si caused by 1 MeV Si+ implantation* D. P. Hickeya Department of Materials defect formation and evolution in the 001 Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no 311 defect

  7. Formation of Ge nanoclusters on Si(1 1 1)-7 7 surface at high temperature

    E-Print Network [OSTI]

    Gao, Hongjun

    Formation of Ge nanoclusters on Si(1 1 1)-7 · 7 surface at high temperature H.M. Guo, Y.L. Wang, H for publication 17 May 2004 Available online 5 June 2004 Abstract We report on Ge nanocluster formation on Si(1 1 of the Ge clusters are more uniform than those obtained at room temperature due to an increase

  8. Transistor-Based Ge/SOI Photodetector for Integrated Silicon Photonics

    E-Print Network [OSTI]

    Luo, Xi

    2011-01-01T23:59:59.000Z

    11. Y. -H. Kuo, Y. -K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I.Colace and G. Assanto, “Poly-Ge Near-infrared PhotodetectorsMasini and G. Assanto, “Ge on Si p-i-n photodiodes operating

  9. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping

    E-Print Network [OSTI]

    Rommel, Sean

    Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick and A. Lochtefeld A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2

  10. Materials synthesis and investigation of itinerant ferromagnetism in the UCo?-xFex Ge system

    E-Print Network [OSTI]

    Huang, Kevin

    2009-01-01T23:59:59.000Z

    B. UCo 1?x Fe x Ge . . . . . . . . . . . . . 1. Polycrystalvs temperature data of UCo 1?x Fe x Ge from x = 0.0 to x =vs temperature data of UCo 1?x Fe x Ge from x = 0.20 to x =

  11. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor

    E-Print Network [OSTI]

    Paris-Sud XI, UniversitƩ de

    1 Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Ilmenau (Germany) Abstract. In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface

  12. Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells Q. Mi, X. Xiao report the first room-temperature 1.3 ,um electroluminescence from strained Sir-,Ge,/Si quantum wells to that from the Sit-,GeX wells. A minimum band offset is required to have effective room

  13. GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension General English English (GE) Academic English (AE) 2. Which term will this extension begin? Fall Winter Spring Summer 3 of General English do you wish to request? 1 2 3 4 5 6 (GE sessions are 5 weeks) How many General English

  14. Coexisting Superconductivity and Magnetism in UCoGe Gregory S. Boebinger, National High Magnetic Field Laboratory

    E-Print Network [OSTI]

    Weston, Ken

    Coexisting Superconductivity and Magnetism in UCoGe Gregory S. Boebinger, National High Magnetic focused on the coexistence of superconductivity and ferromagnetism, including UGe2, URhGe, and UCoGe. In these materials, superconductivity develops below the ferromagnetic Curie temperature TC without destroying

  15. Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

    E-Print Network [OSTI]

    Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates V. K. Yang, MAs films grown on Si and SiGe virtual substrates analytically and experimentally. The analytical model­10 Relaxed SiGe graded layers on Si have produced the highest quality GaAs on Si to date for the integration

  16. \\Development, implementation and veri cation of a physics-based Si/SiGe

    E-Print Network [OSTI]

    Paper I \\Development, implementation and veri#12;cation of a physics-based Si/SiGe HBT model and verification of a physics­based Si/SiGe HBT model for millimeter­wave non­ linear circuit simulations. S. Bruce thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects

  17. EVOLUTION OF SELF-INTERSTITIALS INDUCED BY ION-IMPLANTATION IN SiGe ALLOYS

    E-Print Network [OSTI]

    Florida, University of

    EVOLUTION OF SELF-INTERSTITIALS INDUCED BY ION-IMPLANTATION IN SiGe ALLOYS By ROBERT T. CROSBY and Astronomy at the University of Aarhus in Denmark provided the utmost quality SiGe structures for my {311 great colleague, supervisor, and friend) grew the B-doped SiGe structures. J. Liu of Varian

  18. High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator

    E-Print Network [OSTI]

    1 High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator Zhonghe as the gate insulator for low temperature (SiGe thin film transistors (TFTs) has been between the Al2O3 and the SiGe channel layer is sufficiently passivated to make Al2O3 a better alternative

  19. Design of a 250-Gbit/s SiGe HBT Electrooptic Modulator

    E-Print Network [OSTI]

    Huang, Zhaoran "Rena"

    Design of a 250-Gbit/s SiGe HBT Electrooptic Modulator Volume 3, Number 5, October 2011 Tuhin Guha.1109/JPHOT.2011.2169658 1943-0655/$26.00 ©2011 IEEE #12;Design of a 250-Gbit/s SiGe HBT Electrooptic: We present a rigorous electrical and optical analysis of a highly scaled, graded- base, SiGe

  20. SiGe/Si superlattice power generators Gehong Zeng, John E. Bowers

    E-Print Network [OSTI]

    Bowers, John

    SiGe/Si superlattice power generators Gehong Zeng, John E. Bowers Department of Electrical 95064 *Corresponding Email: ali@soe.ucsc.edu, phone: (831) 459-3821 Abstract SiGe is one of the best selective emission of hot electrons through thermionic emission. SiGe/Si superlattice structures were grown

  1. Simulation of Si/SiGe Micro-Cooler by Thermal Quadrupoles Method Y. Ezzahri *(a)

    E-Print Network [OSTI]

    Simulation of Si/SiGe Micro-Cooler by Thermal Quadrupoles Method Y. Ezzahri *(a) , S. Dilhaire (a on thermal quadrupoles is presented to model the behavior of a single stage Si/SiGe micro-cooler in AC of the model with experimental reflectometry techniques is also presented. Performance of Si/SiGe micro

  2. SiGe HBT Nonlinear Phase Noise Modeling Sebastien Gribaldo, Laurent Bary and Olivier Llopis

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    SiGe HBT Nonlinear Phase Noise Modeling S“ebastien Gribaldo, Laurent Bary and Olivier Llopis LAAS model of a SiGe bipolar transistor is presented. This model includes nonlinear noise sources and is able phase noise data at different RF power level. Keywords: nonlinear noise, modelling, SiGe PACS: 85.40.Qx

  3. Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates

    E-Print Network [OSTI]

    Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates R. L on the relaxation of Si/SiGe bilayers of different geometries to obtain up to 1.0% uniaxial tensile strain in silicon and 1.5 GPa uniaxial compressive stress in SiGe [1,2]. The process generates uniform uniaxially

  4. Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation

    E-Print Network [OSTI]

    Allen, Leslie H.

    Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation G. L and Nomarski microscopy. In n-type modulation-doped Si-SiGe structures, the band structure is type II where SiGe layer, generally on top of the strained Si, is intentionally doped leaving the adjacent Si layer

  5. Development, implementation and verification of a physicsbased Si/SiGe

    E-Print Network [OSTI]

    Development, implementation and verification of a physics­based Si/SiGe HBT model for millimeter Abstract A physics­based large­signal model including thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects that are important for the operation of Si/SiGe HBTs

  6. Evaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    1 Evaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction Bipolar. The devices investigated were first, second and third-generation Silicon- Germanium (SiGe) Heterojunction-engineered SiGe technology [1] have potential advantages when compared with Complementary Metal Oxide

  7. IEEE BCTM1.3 Explorations for High Performance SiGe-HeterojunctionBipolar

    E-Print Network [OSTI]

    Technische Universiteit Delft

    IEEE BCTM1.3 Explorations for High Performance SiGe-HeterojunctionBipolar Transistor Integration P.Deixler@philips.com,Phone: -1 505 858 2960 Abstract We present a SiGe HBT integration-study, introducing a low-complexity integration-scheme. We demonstrate a stepped box-like SiGe base-profile designed to reduce reverse Early

  8. Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice

    E-Print Network [OSTI]

    Yang, Peidong

    Letters Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires Yiying Wu, Rong-defined compositional profile along the wire axis. Single-crystalline nanowires with longitudinal Si/SiGe superlattice-crystalline nano- wires with Si/SiGe superlattice structure are obtained and thoroughly characterized using

  9. Thermionic power generation at high temperatures using SiGe/Si superlattices

    E-Print Network [OSTI]

    Thermionic power generation at high temperatures using SiGe/Si superlattices Daryoosh Vashaeea of SiGe/Si superlattices for power generation at high temperatures. A detailed theory based on Boltzmann provides only a modest improvement in the power factor. This is due to the fact that SiGe is a multivalley

  10. Plasma process-induced band-gap modifications of a strained SiGe heterostructure

    E-Print Network [OSTI]

    Misra, Durgamadhab "Durga"

    Plasma process-induced band-gap modifications of a strained SiGe heterostructure P. K. Swain,a) S the strain of coherently strained SiGe. This work investigates the change in valence-band discontinuity in plasma-exposed SiGe films due to strain relaxation by a capacitance­voltage (C­V) profiling technique

  11. IBM Systems and Technology IBM SiGe 5PAe and

    E-Print Network [OSTI]

    IBM Systems and Technology IBM SiGe 5PAe and 1KW5PAe technologies Keep pace with mobile advances SiGe offerings featuring copper pillar and through-silicon-via options Take advantage of ongoing to solutions based on gallium arsenide (GaAs) technology, for example, the IBM SiGe 5PAe family offers several

  12. SiGe integrated circuits for millimeter-wave imaging and phased arrays

    E-Print Network [OSTI]

    May, Jason W.

    2009-01-01T23:59:59.000Z

    48 Chapter 4 SiGe W-Band RFIC Components . . . 4.1 W-Bandarray beamformer in 0.18- m SiGe BiCMOS technology. Thetotal power radiometer with SiGe LNA + Detec- tor, (b)

  13. Measurementof Seebeck coefficient perpendicular to SiGe superlattice , Gehang Zeng2

    E-Print Network [OSTI]

    Page 1 Measurementof Seebeck coefficient perpendicular to SiGe superlattice Yan Zhang1 , Gehang to measure the Seebeck coefficient of SiGe superlattice material perpendicular to the layers1 . Successful of the SiGe superlattice micro coolers. Extensive thermoreflectance imaging characterization was performed

  14. Development, implementation and verification of a physics-based Si/SiGe

    E-Print Network [OSTI]

    Development, implementation and verification of a physics-based Si/SiGe HBT model for millimeter Abstract A physics-based large-signal model including thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects that are important for the operation of Si/SiGe HBTs

  15. Study of thermomechanical properties of Si/SiGe superlattices using femtosecond transient thermoreflectance technique

    E-Print Network [OSTI]

    Study of thermomechanical properties of Si/SiGe superlattices using femtosecond transient the thermomechanical properties of two Si/SiGe superlattices. A theoretical model is presented which agrees well-lattice vectors is smaller.8 In the experiments reported here we have applied a FTT technique to study two Si/SiGe

  16. P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1

    E-Print Network [OSTI]

    P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1 , Gerry Robinson, Chris and characterization of single element p-type SiGe/Si superlattice coolers are described. Superlattice structures were]. SiGe is a good thermoelectric material especially for high temperature applications [11

  17. Buckling suppression of SiGe islands on compliant substrates Haizhou Yina)

    E-Print Network [OSTI]

    Duffy, Thomas S.

    Buckling suppression of SiGe islands on compliant substrates Haizhou Yina) Center for Photonics structure made of SiGe and a cap layer were studied by both modeling and experiment. Both epitaxial silicon and accelerate the lateral relaxation, so that larger, flat, relaxed SiGe islands can be achieved. Using a 31 nm

  18. The revolution in SiGe: impact on device electronics D.L. Haramea,*

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    The revolution in SiGe: impact on device electronics D.L. Haramea,* , S.J. Koesterb , G. Freemanc, Hopewell Junction, NY, USA d Georgia Technical University, Atlanta, GA, USA Abstract SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which

  19. Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0??? decay searches of 76Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01T23:59:59.000Z

    The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of View the MathML source?86%Ge76 and View the MathML source?14%Ge74 used in the 0???0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the View the MathML sourceH3(p,n)He3, View the MathML sourceH2(d,n)He3 and View the MathML sourceH3(d,n)He4 reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium andmore »gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy was used to determine the ?-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the View the MathML sourceGe74(n,?)Ge75 reaction, the present data are about a factor of two larger than predicted. It was found that the View the MathML sourceGe74(n,?)Ge75 yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the View the MathML sourceGe76(n,?)Ge77 yield due to the larger cross section of the former reaction.« less

  20. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    SciTech Connect (OSTI)

    Atabaev, I. G., E-mail: atvi@uzsci.net; Matchanov, N. A.; Hajiev, M. U., E-mail: hajiev_mardonbek@mail.ru; Pak, V.; Saliev, T. M. [Academy of Sciences of Uzbekistan, Starodubtsev Physicotechnical Institute (Uzbekistan)

    2010-05-15T23:59:59.000Z

    The effect of different chemical treatments on the properties of Au-n-SiGe and Al-p-SiGe Schottky barriers has been investigated. Etching under different conditions was used to prepare surfaces with different densities of surface states (D{sub ss}). It is shown that the barrier height in the structures under study correlates with the D{sub ss} value and germanium content in the Si{sub 1-x}Ge{sub x} alloy.