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Sample records for lighting ge osram

  1. Osram Sylvania | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg, Oregon:OGEProjects/DefinitionsOrchidxOsComp SystemsOsram

  2. OSRAM SYLVANIA Develops High-Efficiency LED Troffer Replacement

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, OSRAM SYLVANIA is developing a high-efficiency LED 2'x2' troffer replacement that is expected to be commercially available in the spring of 2012 and to be cost-competitive with existing troffers of that size. It is projected to have a light output of up to 4,000 lumens, an efficacy of more than 100 lm/W, and a CCT of 3500K.

  3. High lumen compact fluorescents boost light output in new fixtures

    SciTech Connect (OSTI)

    1992-12-31

    Some compact fluorescent lamps aren`t so compact. General Electric (GE), OSRAM, and Philips have been expanding offerings in longer, more powerful, hard wired CFLs that generate enough light to serve applications once limited to conventional fluorescents and metal halide systems. All three of these manufacturers have for some time offered 18- to 40-watt high-output CFLs, which use a fluorescent tube doubled back on itself to produce a lot of light in a compact source. Now GE has introduced an even larger, more powerful 50-watt unit, and OSRAM is soon to follow suit with a 55-watt lamp. These new entries to the field of turbocharged CFLs can provide general lighting at ceiling heights of 12 feet or more as well as indirect lighting, floodlighting, and wall washing. They are such a concentrated source of light that they can provide the desired illumination using fewer lamps and fixtures than would be needed with competing sources.

  4. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  5. Workplace Charging Challenge Partner: OSRAM SYLVANIA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematics And Statistics » USAJobs SearchAMERICA'SEnergyof Energy JLANetApp WorkplaceOSRAM SYLVANIA

  6. Advanced Lighting Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of raregovAboutRecovery Act RecoveryTechnologies |Appliances & Lighting

  7. CTu2J.1.pdf CLEO Technical Digest OSA 2012 Light Emission in Ge Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.1.pdf CLEO Technical Digest © OSA 2012 Light Emission in Ge Quantum Wells Edward T. Fei1 Engineering, Stanford University, Stanford, CA 94305, USA edfei@stanford.edu Abstract: We present the Ge/SiGe and electroluminescence show enhanced optical properties over bulk Ge. Further optical enhancement is observed in disk

  8. EXC-13-0002 - In the Matter of Technical Consumer Products, Inc...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    decision in which OHA granted exception relief to Philips Lighting Company (Philips), GE Lighting (GE) and Osram Sylvania, Inc. (OSI), as well as several subsequent cases...

  9. EXC-13-0003 - In the Matter of W.W. Grainger, Inc. | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    decision in which OHA granted exception relief to Philips Lighting Company (Philips), GE Lighting (GE) and Osram Sylvania, Inc. (OSI), as well as several subsequent cases...

  10. EXC-12-0013 - In the Matter of EiKO, Ltd. | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    decision in which OHA granted exception relief to Philips Lighting Company (Philips), GE Lighting (GE) and Osram Sylvania, Inc. (OSI), as well as several subsequent cases...

  11. EXC-13-0001 - In the Matter of Feit Electric Company, Inc. |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    decision in which OHA granted exception relief to Philips Lighting Company (Philips), GE Lighting (GE) and Osram Sylvania, Inc. (OSI), as well as several subsequent cases...

  12. Light Stops, Light Staus and the 125 GeV Higgs

    SciTech Connect (OSTI)

    Carena, Marcela; Gori, Stefania; Shah, Nausheen R.; Wagner, Carlos E.M.; Wang, Lian-Tao

    2013-08-01

    The ATLAS and CMS experiments have recently announced the discovery of a Higgs-like resonance with mass close to 125 GeV. Overall, the data is consistent with a Standard Model (SM)-like Higgs boson. Such a particle may arise in the minimal supersymmetric extension of the SM with average stop masses of the order of the TeV scale and a sizable stop mixing parameter. In this article we discuss properties of the SM-like Higgs production and decay rates induced by the possible presence of light staus and light stops. Light staus can affect the decay rate of the Higgs into di-photons and, in the case of sizable left-right mixing, induce an enhancement in this production channel up to $\\sim$ 50% of the Standard Model rate. Light stops may induce sizable modifications of the Higgs gluon fusion production rate and correlated modifications to the Higgs diphoton decay. Departures from SM values of the bottom-quark and tau-lepton couplings to the Higgs can be obtained due to Higgs mixing effects triggered by light third generation scalar superpartners. We describe the phenomenological implications of light staus on searches for light stops and non-standard Higgs bosons. Finally, we discuss the current status of the search for light staus produced in association with sneutrinos, in final states containing a $W$ gauge boson and a pair of $\\tau$s.

  13. Room temperature 1.6 m electroluminescence from Ge light emitting diode on Si substrate

    E-Print Network [OSTI]

    Vuckovic, Jelena

    Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate Szu n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device.4670) Optical materials; (230.3670) Light-emitting diodes. References and links 1. L. C. Kimerling, "Silicon

  14. Project planning workshop 6-GeV synchrotron light source: Volume 2

    SciTech Connect (OSTI)

    Not Available

    1986-01-01

    A series of work sheets, graphs, and printouts are given which detail the work breakdown structure, cost, and manpower requirements for the 6 GeV Synchrotron Light Source. (LEW)

  15. GE Lighting Solutions: Proposed Penalty (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S.

  16. GE Lighting Solutions: Noncompliance Determination (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards.

  17. Impact of Minority Carrier Lifetime on the Performance of Strained Ge Light Sources

    E-Print Network [OSTI]

    Sukhdeo, David S; Birendra,; Dutt,; Nam, Donguk

    2015-01-01

    We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we show that improving the material quality can offer even greater enhancements than techniques such as tensile strain, the leading approach for enhancing Ge light emission. Even for Ge that is so heavily strained that it becomes a direct bandgap semiconductor, the ~1 ns defect-limited carrier lifetime of typical epitaxial Ge limits the LED internal quantum efficiency to less than 10%. In contrast, if the epitaxial Ge carrier lifetime can be increased to its bulk value, internal quantum efficiencies exceeding 90% become possible. For Ge lasers, we show that the defect-limited lifetime becomes increasing important as tensile strain is introduced, and that this defect-limited lifetime must be improved if the full benefits of strain are to be realized. We conversely show that improving the material quality supersedes much of the utility of n...

  18. Kinetics of visible light photo-oxidation of Ge nanocrystals:Theory and in situ measurement

    SciTech Connect (OSTI)

    Sharp, I.D.; Xu, Q.; Yuan, C.W.; Beeman, J.W.; Ager III, J.W.; Chrzan, D.C.; Haller, E.E.

    2006-11-14

    Photo-oxidation of Ge nanocrystals illuminated with visible laser light under ambient conditions was investigated. The photo-oxidation kinetics were monitored by in situ measurement of the crystalline Ge volume fraction by Raman spectroscopy. The effects of laser power and energy on the extent of oxidation were measured using both in situ and ex situ Raman scattering techniques. A mechanistic model in which the tunneling of photo-excited carriers to the oxide surface for electron activated molecular oxygen dissociation is proposed. This quantitative model successfully describes all experimental photo-oxidation observations using physical parameters.

  19. A Spin-Light Polarimeter for Multi-GeV Longitudinally Polarized Electron Beams

    SciTech Connect (OSTI)

    Mohanmurthy, Prajwal [Mississippi State University, Starkville, MS (United States); Dutta, Dipangkar [Mississippi State University, Starkville, MS (United States) and Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

    2014-02-01

    The physics program at the upgraded Jefferson Lab (JLab) and the physics program envisioned for the proposed electron-ion collider (EIC) include large efforts to search for interactions beyond the Standard Model (SM) using parity violation in electroweak interactions. These experiments require precision electron polarimetry with an uncertainty of < 0.5 %. The spin dependent Synchrotron radiation, called "spin-light," can be used to monitor the electron beam polarization. In this article we develop a conceptual design for a "spin-light" polarimeter that can be used at a high intensity, multi-GeV electron accelerator. We have also built a Geant4 based simulation for a prototype device and report some of the results from these simulations.

  20. It's 2015: Should All Your Sockets be Filled with LEDs?

    Energy Savers [EERE]

    - mid-power LEDs on PCb used in 2x4 troffers 4 LED Modules and Light Engines GE Infusion Philips Fortimo Osram PrevaLED 5 LEDs: A New Light Source for Everything * Outdoor...

  1. Polymer OLED White Light Development Program

    SciTech Connect (OSTI)

    Homer Antoniadis; Vi-En Choong; Stelios Choulis; Brian Cumpston; Rahul Gupta; Mathew Mathai; Michael Moyer; Franky So

    2005-12-19

    OSRAM Opto Semiconductors (OSRAM) successfully completed development, fabrication and characterization of the large area, polymer based white light OLED prototype at their OLED Research and Development (R&D) facility in San Jose, CA. The program, funded by the Department of Energy (DOE), consisted of three key objectives: (1) Develop new polymer materials and device architectures--in order to improve the performance of organic light emitters. (2) Develop processing techniques--in order to demonstrate and enable the manufacturing of large area, white light and color tunable, solid state light sources. (3) Develop new electronics and driving schemes for organic light sources, including color-tunable light sources. The key performance goals are listed. A world record efficiency of 25 lm/W was established for the solution processed white organic device from the significant improvements made during the project. However, the challenges to transfer this technology from an R&D level to a large tile format such as, the robustness of the device and the coating uniformity of large area panels, remain. In this regard, the purity and the blend nature of the materials are two factors that need to be addressed in future work. During the first year, OSRAM's Materials and Device group (M&D) worked closely with the major polymer material suppliers to develop the polymer emissive technology. M&D was successful in demonstrating a 7-8 lm/W white light source which was based on fluorescent materials. However, it became apparent that the major gains in efficiency could only be made if phosphorescent materials were utilized. Thus, in order to improve the performance of the resulting devices, the focus of the project shifted towards development of solution-processable phosphorescent light emitting diodes (PHOLEDs) and device architectures. The result is a higher efficiency than the outlined project milestone.

  2. Light nuclides produced in the proton-induced spallation of {sup 238}U at 1 GeV

    SciTech Connect (OSTI)

    Ricciardi, M.V.; Armbruster, P.; Enqvist, T.; Kelic, A.; Rejmund, F.; Schmidt, K.-H.; Yordanov, O.; Benlliure, J.; Pereira, J.; Bernas, M.; Mustapha, B.; Stephan, C.; Tassan-Got, L.

    2006-01-15

    The production of light and intermediate-mass nuclides formed in the reaction {sup 1}H+{sup 238}U at 1 GeV was measured at the Fragment Separator at GSI, Darmstadt. The experiment was performed in inverse kinematics, by shooting a 1 A GeV {sup 238}U beam on a thin liquid-hydrogen target. A total of 254 isotopes of all elements in the range 7{<=}Z{<=}37 were unambiguously identified, and the velocity distributions of the produced nuclides were determined with high precision. The results show that the nuclides are produced in a very asymmetric binary decay of heavy nuclei originating from the spallation of uranium. All the features of the produced nuclides merge with the characteristics of the fission products as their mass increases.

  3. Light Nuclides Produced in the Proton-Induced Spallation of 238U at 1 GeV

    E-Print Network [OSTI]

    M. V. Ricciardi; P. Armbruster; J. Benlliure; M. Bernas; A. Boudard; S. Czajkowski; T. Enqvist; A. Kelic; S. Leray; R. Legrain; B. Mustapha; J. Pereira; F. Rejmund; K. -H. Schmidt; C. Stephan; L. Tassan-Got; C. Volant; O. Yordanov

    2005-08-24

    The production of light and intermediate-mass nuclides formed in the reaction 1H+238U at 1 GeV was measured at the Fragment Separator (FRS) at GSI, Darmstadt. The experiment was performed in inverse kinematics, shooting a 1 A GeV 238U beam on a thin liquid-hydrogen target. 254 isotopes of all elements in the range from Z=7 to Z=37 were unambiguously identified, and the velocity distributions of the produced nuclides were determined with high precision. The results show that the nuclides are produced in a very asymmetric binary decay of heavy nuclei originating from the spallation of uranium. All the features of the produced nuclides merge with the characteristics of the fission products as their mass increases.

  4. Light NMSSM Neutralino Dark Matter in the Wake of CDMS II and a 126 GeV Higgs

    E-Print Network [OSTI]

    Kozaczuk, Jonathan

    2013-01-01

    Recent results from the Cryogenic Dark Matter Search (CDMS) experiment have renewed interest in light dark matter with a large spin-independent neutralino-nucleon scattering cross-section. Here, we examine the regions of the NMSSM capable of producing a light neutralino with a large direct detection cross-section, with scattering mediated by a light singlet-like scalar, and a 126 GeV Higgs consistent with the LHC results. We focus on two different scenarios for annihilation in the early universe, namely annihilation mediated by (1) a light scalar or by (2) a light pseudoscalar. We find that there exists viable parameter space in which a very light CP-even Higgs boson mediates both the neutralino-nucleon spin-independent elastic scattering and the neutralino pair-annihilation in the early universe. These regions can feature significant tree-level contributions to the SM-like Higgs mass and hence not require very heavy or highly-mixed stops. The strongest constraints in this case come from the decays of the SM-...

  5. Light harvesting with Ge quantum dots embedded in SiO{sub 2} or Si{sub 3}N{sub 4}

    SciTech Connect (OSTI)

    Cosentino, Salvatore Raciti, Rosario; Simone, Francesca; Crupi, Isodiana; Terrasi, Antonio; Mirabella, Salvo; Sungur Ozen, Emel; Aydinli, Atilla; Mio, Antonio M.; Nicotra, Giuseppe; Turan, Rasit

    2014-01-28

    Germanium quantum dots (QDs) embedded in SiO{sub 2} or in Si{sub 3}N{sub 4} have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850?°C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 3–9?nm range in the SiO{sub 2} matrix, or in the 1–2?nm range in the Si{sub 3}N{sub 4} matrix, as measured by transmission electron microscopy. Thus, Si{sub 3}N{sub 4} matrix hosts Ge QDs at higher density and more closely spaced than SiO{sub 2} matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si{sub 3}N{sub 4} matrix in comparison with those in the SiO{sub 2} host. Light absorption by Ge QDs is shown to be more effective in Si{sub 3}N{sub 4} matrix, due to the optical bandgap (0.9–1.6?eV) being lower than in SiO{sub 2} matrix (1.2–2.2?eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si{sub 3}N{sub 4} matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices.

  6. 'Self-absorbed' GeV light curves of gamma-ray burst afterglows

    SciTech Connect (OSTI)

    Panaitescu, A.; Vestrand, W. T.; Wo?niak, P. [Space and Remote Sensing, MS B244, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2014-06-10

    We investigate the effect that the absorption of high-energy (above 100 MeV) photons produced in gamma-ray burst afterglow shocks has on the light curves and spectra of Fermi Large Area Telescope (LAT) afterglows. Afterglows produced by the interaction of a relativistic outflow with a wind-like medium peak when the blast wave deceleration sets in, and the afterglow spectrum could be hardening before that peak, as the optical thickness to pair formation is decreasing. In contrast, in afterglows produced in the interaction with a homogeneous medium, the optical thickness to pair formation should increase and yield a light curve peak when it reaches unity, followed by a fast light curve decay, accompanied by spectral softening. If energy is injected in the blast wave, then the accelerated increase of the optical thickness yields a convex afterglow light curve. Other features, such as a double-peak light curve or a broad hump, can arise from the evolution of the optical thickness to photon-photon absorption. Fast decays and convex light curves are seen in a few LAT afterglows, but the expected spectral softening is rarely seen in (and difficult to measure with) LAT observations. Furthermore, for the effects of photon-photon attenuation to shape the high-energy afterglow light curve without attenuating it too much, the ejecta initial Lorentz factor must be in a relatively narrow range (50-200), which reduces the chance of observing those effects.

  7. Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

    E-Print Network [OSTI]

    J. W. Beeman; A. Gentils; A. Giuliani; M. Mancuso; G. Pessina; O. Plantevin; C. Rusconi

    2012-12-01

    In germanium-based light detectors for scintillating bolometers, a SiO$_2$ anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25-35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at $\\sim 630$ nm wavelength) that will characterise future neutrinoless double beta decay experiments on the isotope $^{82}$Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO$_2$ coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

  8. A tale of tails. Dark matter interpretations of the Fermi GeV excess in light of background model systematics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Calore, Francesca; Cholis, Ilias; McCabe, Christopher; Weniger, Christoph

    2015-03-10

    Several groups have identified an extended excess of gamma rays over the modeled foreground and background emissions towards the Galactic center (GC) based on observations with the Fermi Large Area Telescope. This excess emission is compatible in morphology and spectrum with a telltale sign from dark matter (DM) annihilation. Here, we present a critical reassessment of DM interpretations of the GC signal in light of the foreground and background uncertainties that some of us recently outlaid in Calore et al. (2014). We find that a much larger number of DM models fits the gamma-ray data than previously noted. In particular:more »(1) In the case of DM annihilation into b¯b, we find that even large DM masses up to m??74 GeV are allowed at p-value >0.05. (2) Surprisingly, annihilation into nonrelativistic hh gives a good fit to the data. (3) The inverse Compton emission from ?+?– with m? ~ 60–70 GeV can also account for the excess at higher latitudes, |b|>2°, both in its spectrum and morphology. We also present novel constraints on a large number of mixed annihilation channels, including cascade annihilation involving hidden sector mediators. In conclusion, we show that the current limits from dwarf spheroidal observations are not in tension with a DM interpretation when uncertainties on the DM halo profile are accounted for.« less

  9. The 750 GeV Diphoton Excess as a First Light on Supersymmetry Breaking

    E-Print Network [OSTI]

    J. A. Casas; J. R. Espinosa; J. M. Moreno

    2015-12-24

    One of the most exciting explanations advanced for the recent diphoton excess found by ATLAS and CMS is in terms of sgoldstino decays: a signal of low-energy supersymmetry-breaking scenarios. The sgoldstino, a scalar, couples directly to gluons and photons, with strength related to gaugino masses, that can be of the right magnitude to explain the excess. However, fitting the suggested resonance width, Gamma ~ 45 GeV, is not so easy. In this paper we explore efficient possibilities to enhance the sgoldstino width, via the decay into two Higgses, two Higgsinos and through mixing between the sgoldstino and the Higgs boson. In addition, we present an alternative and more efficient mechanism to generate a mass splitting between the scalar and pseudoscalar components of the sgoldstino, which has been suggested as an interesting alternative explanation to the apparent width of the resonance.

  10. Production of multistrange hadrons, light nuclei and hypertriton in central Au+Au collisions at $\\sqrt{s_{NN}}=$ 11.5 and 200 GeV

    E-Print Network [OSTI]

    Shah, N; Chen, J H; Zhang, and S

    2015-01-01

    The production of dibaryons, light nuclei and hypertriton in the most central Au+Au collisions at $\\sqrt{s_{NN}}=$ 11.5 and 200 GeV are investigated by using a naive coalescence model. The production of light nuclei is studied and found that the production rate reduces by a factor of 330 (1200) for each extra nucleon added to nuclei at $\\sqrt{s_{NN}}=$ 11.5 (200) GeV. The $p_{T}$ integrated yield of multistrange hadrons falls exponentially as strangeness quantum number increases. We further investigate strangeness population factor $S_{3}, S_{2}$ as a function of transverse momentum as well as $\\sqrt{s_{NN}}$. The baryon-strangeness correlation coefficient $C_{BS}$ is also investigated for $\\sqrt{s_{NN}}=$ 11.5 and 200 GeV. The calculations for $\\sqrt{s_{NN}}=$ 11.5 GeV presented here will stimulate interest to carry out these measurements during the phase-II of beam energy scan program at STAR experiment.

  11. Phenomenology of ``inos'' in the Light Gaugino Scenario and Possible Evidence for a $\\sim 53$ GeV Chargino

    E-Print Network [OSTI]

    Glennys R. Farrar

    1996-12-13

    The tree-level-massless gaugino scenario predicts that the lighter chargino mass is less than m_W and that gluino and lightest neutralino masses are $\\lsi 1$ GeV. In this case the dominant decay mode of charginos and non-LSP neutralinos is generically to three jets. The excess of "4j" events with total invariant mass $\\sim 105$ GeV observed in LEP running at 130-136 GeV is noted to be consistent with pair production of $\\sim 53$ GeV charginos. Data at 161 and 172 GeV from Fall, 1996, cannot conclusively test this hypothesis (because cuts to eliminate $W^+W^-$ background reduce the efficiency significantly) but is suggestive that the signal persists.

  12. Electric polarizabilities of Ge(CH{sub 3}){sub 4} from collision-induced light-scattering experiments and ab initio calculations

    SciTech Connect (OSTI)

    Maroulis, G.; Hohm, Uwe [Department of Chemistry, University of Patras, GR-26500 Patras (Greece); Institut fuer Physikalische und Theoretische Chemie der Technischen, Universitaet Braunschweig, Hans-Sommer-Strasse 10, D-38106 Braunschweig (Germany)

    2007-09-15

    The dipole-quadrupole and dipole-octopole polarizabilities A and E of Ge(CH{sub 3}){sub 4} have been determined from collision-induced light-scattering experiments and ab initio calculations. Our experimental results are |A|/e{sup 2}a{sub 0}{sup 3}E{sub h}{sup -1}<143 and |E|/e{sup 2}a{sub 0}{sup 4}E{sub h}{sup -1}<545. Our best theoretical values are A=45.48 and E=-389.9, respectively. The calculated value for the dipole polarizability is {alpha}/e{sup 2}a{sub 0}{sup 2}E{sub h}{sup -1}=83.26, in fine accord with our static experimental estimate of 83.2. We present a detailed discussion of the level of agreement between experiment and theory.

  13. Study of Pu consumption in Advanced Light Water Reactors. Evaluation of GE Advanced Boiling Water Reactor plants

    SciTech Connect (OSTI)

    Not Available

    1993-05-13

    Timely disposal of the weapons plutonium is of paramount importance to permanently safeguarding this material. GE`s 1300 MWe Advanced Boiling Water Reactor (ABWR) has been designed to utilize fill] core loading of mixed uranium-plutonium oxide fuel. Because of its large core size, a single ABWR reactor is capable of disposing 100 metric tons of plutonium within 15 years of project inception in the spiking mode. The same amount of material could be disposed of in 25 years after the start of the project as spent fuel, again using a single reactor, while operating at 75 percent capacity factor. In either case, the design permits reuse of the stored spent fuel assemblies for electrical energy generation for the remaining life of the plant for another 40 years. Up to 40 percent of the initial plutonium can also be completely destroyed using ABWRS, without reprocessing, either by utilizing six ABWRs over 25 years or by expanding the disposition time to 60 years, the design life of the plants and using two ABWRS. More complete destruction would require the development and testing of a plutonium-base fuel with a non-fertile matrix for an ABWR or use of an Advanced Liquid Metal Reactor (ALMR). The ABWR, in addition, is fully capable of meeting the tritium target production goals with already developed target technology.

  14. Embodied Energy and Off-Grid Lighting

    E-Print Network [OSTI]

    Alstone, Peter

    2012-01-01

    8 W driver for 6 high power LEDs MJ/m2 Manufacturing Energychip estimate for high power LED MJ/kg Cradle to Gate Duque1 kWh/LED package for high power LED packages. Osram (2009)

  15. Lighting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E C H N13,CenterCenterLighting Sign In

  16. Study of Pu consumption in advanced light water reactors: Evaluation of GE advanced boiling water reactor plants - compilation of Phase 1B task reports

    SciTech Connect (OSTI)

    1993-09-15

    This report contains an extensive evaluation of GE advanced boiling water reactor plants prepared for United State Department of Energy. The general areas covered in this report are: core and system performance; fuel cycle; infrastructure and deployment; and safety and environmental approval.

  17. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01

    Claeys, et al. , "Si versus Ge for future microelectronics,"in Selectively Doped Si/Si x Ge 1-x Superlattices," PhysicalA. Fitzgerald, et al. , "Relaxed Ge x Si 1-x structures for

  18. Fast Light, Fast Neutrinos?

    E-Print Network [OSTI]

    Kevin Cahill

    2011-10-10

    In certain media, light has been observed with group velocities faster than the speed of light. The recent OPERA report of superluminal 17 GeV neutrinos may describe a similar phenomenon.

  19. LED Market Intelligence Report

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    around dimming capabilities. 16 LED Market Intelligence Report Home Depot Walmart Cree Philips TCP GE LSG Osram Feit Costco Lowe's Retail, Regulations, and LEDs Like...

  20. GE's Digital Marketplace to Revolutionize Manufacturing | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    an open online space for companies to collaborate and transform how they design and manufacture their products in the future NISKAYUNA, NY, June 2, 2015 - GE (NYSE:GE), a leading...

  1. CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GE 210 MATH 223CE 212 CMPT 116 Hum/SocSci Jr. GEOE 218 CE 225 MATH 224GE 213# GE 348# CE 295 English 11x# CE 315 CE 311

  2. Smart Street Lights | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation ofAlbuquerque|Sensitive Species3performed StevenSmall

  3. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 ME 227 GE 213# MATH 223 EE 201ME 214 CMPT 116 ME 215 GE 226 MATH 224 Hum/SocSci@# ME 251 ME 229 ME 318 ME 335 ME 313

  4. Organic Light-Emitting Devices (OLEDS) and Their Optically Detected Magnetic Resonance (ODMR)

    SciTech Connect (OSTI)

    Gang Li

    2003-12-12

    Organic Light-Emitting Devices (OLEDs), both small molecular and polymeric have been studied extensively since the first efficient small molecule OLED was reported by Tang and VanSlyke in 1987. Burroughes' report on conjugated polymer-based OLEDs led to another track in OLED development. These developments have resulted in full color, highly efficient (up to {approx} 20% external efficiency 60 lm/W power efficiency for green emitters), and highly bright (> 140,000 Cd/m{sup 2} DC, {approx}2,000,000 Cd/m{sup 2} AC), stable (>40,000 hr at 5 mA/cm{sup 2}) devices. OLEDs are Lambertian emitters, which intrinsically eliminates the view angle problem of liquid crystal displays (LCDs). Thus OLEDs are beginning to compete with the current dominant LCDs in information display. Numerous companies are now active in this field, including large companies such as Pioneer, Toyota, Estman Kodak, Philipps, DuPont, Samsung, Sony, Toshiba, and Osram, and small companies like Cambridge Display Technology (CDT), Universal Display Corporation (UDC), and eMagin. The first small molecular display for vehicular stereos was introduced in 1998, and polymer OLED displays have begun to appear in commercial products. Although displays are the major application for OLEDs at present, they are also candidates for nest generation solid-state lighting. In this case the light source needs to be white in most cases. Organic transistors, organic solar cells, etc. are also being developed vigorously.

  5. GE ?????????????????4G?????...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A die containing 400 ohmic MEMS switches, as viewed under a microscope, atop a U.S. dime. This device, made with GE's...

  6. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 Hum/SocSci Jr. MATH 224 English 11x CHE 220CHE 210 CHE

  7. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 HSS@# MATH 224 English 11x CHE 220CHE 210 CHE 323 CHE

  8. GE Research and Development | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of rare Kaonforsupernovae model (Journal About DOE ButtonFSO HomefeatureGE

  9. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)about aMunich, GermanyAbout GE

  10. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)aboutRio de Janeiro,theIsGE

  11. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150?°C for 1?h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301?kJ·mol{sup ?1}) are greater than that of Ge-Ge bonds (264?kJ·mol{sup ?1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  12. Thermoelectric properties of nanoporous Ge

    E-Print Network [OSTI]

    Lee, Joo-Hyoung

    We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant ...

  13. GE Anna Heijbel / The Storm

    E-Print Network [OSTI]

    Tian, Weidong

    1 / GE Anna Heijbel / The Storm® Confocal Optics 50, 100, 200 µm 5 IQTL · ·DNA ·DNA Gels, blots, tissue sections (not in situ), radio-TLC & X-Ray diffraction #12;2 / GE Anna Heijbel / Phosphor µm 1010 43 x 35 cm43 x 35 cm Scanning Technology #12;3 / GE Anna Heijbel / Confocal Optics PMTPMT

  14. OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng

    E-Print Network [OSTI]

    Deng, Xunming

    OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR CELLS Xunming Deng Department, tandem and triple-junction a-SiGe based solar cells and materials [6-19]. Much of the research is also light and bias voltage for the measurement of multiple-junction cells. Materials characterization using

  15. Characteristics of Sn segregation in Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Li, H.; Chang, C.; Chen, T. P.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shi, Z. W.; Chen, H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-10-13

    We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

  16. CTu2J.4.pdf CLEO Technical Digest OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.4.pdf CLEO Technical Digest © OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 µm thick silicon. Introduction and motivation Ge and especially Ge/SiGe quantum wells exhibit strong electroabsorption (Franz

  17. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    control platform which can be used to host intelligent grid management software for microgrids. A typical GE control platform which can be used to host intelligent grid management...

  18. GE Develops High Water Recovery Technology in China | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    purification industry SHANGHAI, September. 17, 2015 - A team of scientists led by the Coating and Membrane Technology Laboratory at GE's China Technology Center have successfully...

  19. GE Healthcare Product Guide 2007

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare BioProcess Product Guide 2007 #12;How to contact us Europe www.gehealthcare.com/bioprocess or by phone (T), fax (F), and Email Austria T: +43 1 57 606 1613 F: +43 1 57 606 1614 Email: cust.orderde@ge.com Belgium T: 0800 73890 F: 02 416 8206 Email: order.bnl@ge.com Central and East Europe (Austria) T: +43 1

  20. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and it will become hotter. Move it away (demagnetization) and the food cools down. GE researchers predict the cooling refrigerators could reduce energy consumption by 20%, in...

  1. Flexible Energy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) Flexible Fuel Solutions Offer Efficient, Reliable Energy The world of power generation is evolving at lightning speed. GE is focused on staying one step...

  2. GE Energy Management Ancillary Services

    E-Print Network [OSTI]

    GE Energy Management Ancillary Services Definitions and Capability Study Part 2, Tasks 3-4, Final Online Wind Plants & Frequency Responsive Load Reserves

  3. Light-Light Scattering

    E-Print Network [OSTI]

    Naohiro Kanda

    2011-06-03

    For a long time, it is believed that the light by light scattering is described properly by the Lagrangian density obtained by Heisenberg and Euler. Here, we present a new calculation which is based on the modern field theory technique. It is found that the light-light scattering is completely different from the old expression. The reason is basically due to the unphysical condition (gauge condition) which was employed by the QED calcualtion of Karplus and Neumann. The correct cross section of light-light scattering at low energy of $(\\frac{\\omega}{m} \\ll 1)$ can be written as $ \\displaystyle{\\frac{d\\sigma}{d\\Omega}=\\frac{1}{(6\\pi)^2}\\frac{\\alpha^4} {(2\\omega)^2}(3+2\\cos^2\\theta +\\cos^4\\theta)}$.

  4. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menéndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Aoki, Toshihiro [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1–y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1–y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1–y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1–y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1–y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1–y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1–x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

  5. Advanced Light Source QUICK FACTS

    E-Print Network [OSTI]

    : Electrons with a nominal energy of 1.9 GeV ~0.20 mm × 0.02 mm (about the width of a human hair) Electrons and x-ray light that is directed down beamlines to experiment endstations. Size of Electron Beam: 35 around the storage ring, the electrons emit synchrotron radiation--energy in the form of photons

  6. Low-voltage broad-band electroabsorption from thin Ge/SiGe

    E-Print Network [OSTI]

    Miller, David A. B.

    Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using

  7. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 449# GE 110 Geological Engineering CE 271 GEOE 378 4TH YEAR 3RD YEAR 2ND YEAR 1ST YEAR or PHYS 128

  8. Miniaturized Turbine Offers Desalination Solution | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    salt from ice New solution draws from the GE Store, integrating GE's experience with steam turbine, oil & gas compressors, 3D printing and water processing NISKAYUNA, NY,...

  9. Energy Frontier Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    include GE Global Research, Yale University-Crabtree Group, Yale University-Batista Group, Stanford University and Lawrence Berkeley National Laboratory. GE Global...

  10. Edison Summit Brings GE Leaders Together | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    We are ONE Edison Aisha Yousuf 2014.03.21 "We are ONE Edison" was the theme of the first GE Global Edison Summit held February 16-18, 2014 at Coronado Springs Resort in Orlando,...

  11. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  12. Sneaky light stop

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Eifert, Till; Nachman, Benjamin

    2015-02-20

    A light supersymmetric top quark partner (stop) with a mass nearly degenerate with that of the standard model (SM) top quark can evade direct searches. The precise measurement of SM top properties such as the cross-section has been suggested to give a handle for this ‘stealth stop’ scenario. We present an estimate of the potential impact a light stop may have on top quark mass measurements. The results indicate that certain light stop models may induce a bias of up to a few GeV, and that this effect can hide the shift in, and hence sensitivity from, cross-section measurements. Duemore »to the different initial states, the size of the bias is slightly different between the LHC and the Tevatron. The studies make some simplifying assumptions for the top quark measurement technique, and are based on truth-level samples.« less

  13. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2005-2006 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 BusSci/HSS# GEOE 315 GEOE

  14. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 Hum/SocSci Jr. GEOE 315

  15. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window)...

  16. Moving | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on77 PAGEMissionStressMove data fromMoving We're always working

  17. Recommended GE Curriculum for the BSEE Majors

    E-Print Network [OSTI]

    Ravikumar, B.

    Recommended GE Curriculum for the BSEE Majors Area Subjects Suggested GE Courses Courses Actual units GE Units A. Communication and Critical Thinking (9) A.2. Fund. of Communication ENGL 101 4 4 A.3, Theatre, Dance and Music and Film Select from the GE C.1 list in the SSU Catalog 3 3 C.2. Literature

  18. HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping of Ocular Dominance Columns

    E-Print Network [OSTI]

    HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping the contamination of non-specific large vessel signals. Animal studies have used non- conventional functional minimizing the contributions of extravascular BOLD signals around large vessels due to the refocusing pulse

  19. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge condensation and wafer bonding. In this paper, a brief introduction of each method

  20. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    Ge­Si intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of Si­Ge intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  1. Nonlithographic epitaxial SnxGe1x dense nanowire arrays grown on Ge,,001...

    E-Print Network [OSTI]

    Atwater, Harry

    Nonlithographic epitaxial SnxGe1Àx dense nanowire arrays grown on Ge,,001... Regina Ragan-thick SnxGe1 x /Ge(001) epitaxial films with 0 x 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1 x nanowires oriented along 001 , as confirmed by composition contrast

  2. GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery...

    Office of Science (SC) Website

    chemistry of an actual commercial battery while charging and discharging in real time. Additional studies of battery cross-sections at APS helped engineers further...

  3. Smart Lighting Controller!! Smart lighting!

    E-Print Network [OSTI]

    Anderson, Betty Lise

    'll build the circuit! We'll use an LED to represent the room lights! #12;4! Block diagram! Battery! Rail! #12;23! LED: light-emitting diode! Diode conducts current in only one direction! When current flows1! Smart Lighting Controller!! #12;2! Smart lighting! No need to spend energy lighting the room if

  4. 2015 SSL R&D WORKSHOP PRESENTATIONS - DAY 3 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    3 2015 SSL R&D WORKSHOP PRESENTATIONS - DAY 3 The Physiological Impact of Lighting - Andreas Wojtysiak, OSRAM Ongoing LED R&D Challenges - Peter Blais, Kemet Ongoing LED R&D...

  5. Direct band gap optical emission from compressively strained Ge films grown on relaxed Si{sub 0.5}Ge{sub 0.5} substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)] [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2013-10-14

    Compressively strained Ge films have been grown on relaxed Si{sub 0.5}Ge{sub 0.5} virtual substrate in ultra high vacuum using molecular beam epitaxy. Structural characterization has shown that the Ge films are compressively strained with partial strain relaxation in a film thicker than 3.0 nm, due to onset of island nucleation. Photoluminescence spectra exhibit the splitting of degenerate Ge valence band into heavy hole and light hole bands with a broad direct band gap emission peak around 0.81 eV. Temperature and excitation power dependent emission characteristics have been studied to investigate the mechanism of luminescence quenching at high temperatures and the role of non-radiative recombination centers.

  6. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    ND YEAR 1ST YEAR 3RD YEAR # These courses can be taken in either term.*must meet specific Hum/SocSci@# Bus Sci/HSS#Design Elec.#* T.E.*# T.E.*#GE 449# ME 314 or PHYS 128 or GEOL 121 4TH YEAR 2

  7. GE Energy Management Ancillary Services

    E-Print Network [OSTI]

    GE Energy Management Ancillary Services Definitions and Capability Study Part 1, Tasks 1-2, FinalRose Michael O'Connor Sundar Venkataraman Revision 1 Date: 12/19/2012 #12;Ancillary Services Definitions.................................................................................................................... 7 3.1 Task 1: Identify and define ancillary services needed for integration of new generation

  8. PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON

    E-Print Network [OSTI]

    Kundu, Debasis

    PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON LIKELIHOOD RATIO proposes the use of likelihood ratio statistic in choosing between gamma and GE models or between Weibull and GE models. Probability of correct selec- tions are obtained using Monte Carlo simulations for various

  9. Phenomenology of Charginos and Neutralinos in the Light Gaugino Scenario

    E-Print Network [OSTI]

    Glennys R. Farrar

    1996-08-21

    The light gaugino scenario predicts that the lighter chargino mass is less than m_W, gluino and lightest neutralino masses are <~ 1 GeV, and the dominant decay mode of charginos and non-LSP neutralinos is generically to three jets. The excess "4j" events observed by ALEPH in e+ e- annihilation at 133 GeV may be evidence that m(C_1) = 53 GeV. If so, m(N_2) = 110-121 GeV, m(N_2) = 38-63 GeV, m(N_3) = 75-68 GeV; m(sneu_e) is probably ~m(C_1). A detailed analysis of the multi-jet events is needed to exclude this possibility. Consequences for FNAL and higher energy LEP running are given.

  10. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    SciTech Connect (OSTI)

    Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-08-11

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  11. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    Engineering * must meet specific requirements # These courses can be taken in either term. 2ND YEAR 3RD YEAR 4 431 Last editted Apr 4, 2006 ^offered in alternate years; take in either 3rd or 4th year CHEM 242TH YEAR 1ST YEAR CHE 422 CHE 232 HSS@# 2005-2006 or PHYS 128 or GEOL 121 or AB E 312 GE 300# CHE 332

  12. Light Properties Light travels at the speed of light `c'

    E-Print Network [OSTI]

    Mojzsis, Stephen J.

    LIGHT!! #12;Light Properties Light travels at the speed of light `c' C = 3 x 108 m/s Or 190,000 miles/second!! Light could travel around the world about 8 times in one second #12;What is light?? Light is a "wave packet" A photon is a "light particle" #12;Electromagnetic Radiation and You Light is sometimes

  13. Light Gluinos

    E-Print Network [OSTI]

    Glennys R. Farrar

    1994-08-30

    Gluino and lightest neutralino masses are naturally less than a few GeV if dimension-3 susy-breaking operators are absent from the low energy theory. In this case gaugino masses come from loops and are calculable in terms of known particle masses and two mass parameters, $\\mu$ and $\\tilde{m}$. The phenomenology of such a scenario is discussed.

  14. New Efficiency Record Achieved for White OLED Device

    Broader source: Energy.gov [DOE]

    Osram Opto-Semiconductors, Inc. has successfully demonstrated a white organic light emitting diode (OLED) with a record efficiency of 25 lumens per watt, the highest known efficiency achieved to date for a polymer-based white OLED. The 25 LPW cool-white-emitting device was produced by applying a standard external inorganic phosphor to Osram's record-breaking blue-emitting phosphorescent polymer device with a peak luminous efficacy of 14 LPW.

  15. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212 can be taken in either term. GE 124 MATH 110 MATH 124CHEM 115 PHYS 155 3RD YEAR GE 125 GE 110 COMM 102

  16. Purdue, GE Collaborate On Advanced Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptionsProteinTotal natural gasPurchase, Delivery,Purdue, GE to

  17. About GE Global Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of raregovAboutRecovery Act Recovery ActARM OverviewAbout GE Global Research

  18. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article)Forthcoming UpgradesArea:Benefits ofofStackOn thePower ofGE

  19. High-efficiency GaAs/Ge monolithic tandem solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.; Vernon, S.M.; Bajgar, C.; Haven, V.E.; Geoffroy, L.M.; Lillington, D.R.

    1988-05-01

    High photovoltaic efficiency and light weight are important criteria for spacecraft power applications. Present GaAs cells are approaching their efficiency limits, but are not efficient or light enough for future needs. The authors have investigated tandem cells of GaAs grown by MOCVD on thin Ge to address both higher efficiency and reduced weight. GaAs/Ge monolithic tandem cells of 4-cm/sup 2/ area have been produced with independently verified efficiencies up to 21.7 percent (AMO, one sun, 25/sup 0/C, total area). Under AM1.5 Global conditions, efficiencies are up to 24.3 percent. These are the highest one-sun efficiencies reported for GaAs/Ge cells, and the highest efficiency for a two-terminal monolithic tandem cell.

  20. Microgravity and Vision in Astronauts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matterEnergyPublicatonsSubstancesproteinGE Researchers Study

  1. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  2. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclear SecurityChattanChemistry ofNanChevron, GE form

  3. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room News Publications Traditional Knowledge KiosksAboutHelp & Reference Users AdvAncedGE

  4. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    SciTech Connect (OSTI)

    Liu, Zhi; Li, Yaming; He, Chao; Li, Chuanbo; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen Wang, Qiming

    2014-05-12

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n{sup ?}-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N{sup +} region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.

  5. Cerenkov Light

    ScienceCinema (OSTI)

    Slifer, Karl

    2014-05-22

    The bright blue glow from nuclear reactors is Cerenkov light. Karl Slifer describes how nuclear physicists can use this phenomenon to study the nucleus of the atom.

  6. Cerenkov Light

    SciTech Connect (OSTI)

    Slifer, Karl

    2013-06-13

    The bright blue glow from nuclear reactors is Cerenkov light. Karl Slifer describes how nuclear physicists can use this phenomenon to study the nucleus of the atom.

  7. Lighting Renovations

    Broader source: Energy.gov [DOE]

    When undertaking a lighting renovation in a Federal building, daylighting is the primary renewable energy opportunity. Photovoltaics (PV) also present an excellent opportunity. While this guide...

  8. GeV emission from Gamma-Ray Burst afterglows

    E-Print Network [OSTI]

    A. Panaitescu

    2008-01-10

    We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

  9. GE Global Research in San Ramon, California

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Careers Leadership Programs What's new in San Ramon Ars Technica: Analyzing the Internet of Things GE Unveils High-Speed Network Infrastructure to Connect Machines, Data...

  10. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...

  11. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.3–0.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  12. DEGREE-SCALE GeV 'JETS' FROM ACTIVE AND DEAD TeV BLAZARS

    SciTech Connect (OSTI)

    Neronov, A.; Semikoz, D.; Kachelriess, M.; Ostapchenko, S.; Elyiv, A.

    2010-08-20

    We show that images of TeV blazars in the GeV energy band should contain, along with point-like sources, degree-scale jet-like extensions. These GeV extensions are the result of electromagnetic cascades initiated by TeV {gamma}-rays interacting with extragalactic background light and the deflection of the cascade electrons/positrons in extragalactic magnetic fields (EGMFs). Using Monte Carlo simulations, we study the spectral and timing properties of the degree-scale extensions in simulated GeV band images of TeV blazars. We show that the brightness profile of such degree-scale extensions can be used to infer the light curve of the primary TeV {gamma}-ray source over the past 10{sup 7} yr, i.e., over a time scale comparable to the lifetime of the parent active galactic nucleus. This implies that the degree-scale jet-like GeV emission could be detected not only near known active TeV blazars, but also from 'TeV blazar remnants', whose central engines were switched off up to 10 million years ago. Since the brightness profile of the GeV 'jets' depends on the strength and the structure of the EGMF, their observation provides additional information about the EGMF.

  13. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  14. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  15. GE Turbine Parts www.edisonmachine.com

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    GE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from's smallest windmills to power cell phones 1/17/2014http://www.gizmag.com/worlds-smallest-windmill-energy

  16. Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  17. Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  18. Update on light WIMP limits: LUX, lite and light

    SciTech Connect (OSTI)

    Nobile, Eugenio Del; Gelmini, Graciela B.; Huh, Ji-Haeng [Department of Physics and Astronomy, UCLA, 475 Portola Plaza, Los Angeles, CA 90095 (United States); Gondolo, Paolo, E-mail: delnobile@physics.ucla.edu, E-mail: gelmini@physics.ucla.edu, E-mail: paolo@physics.utah.edu, E-mail: jhhuh@physics.ucla.edu [Department of Physics and Astronomy, University of Utah, 115 South 1400 East #201, Salt Lake City, UT 84112 (United States)

    2014-03-01

    We reexamine the current direct dark matter data including the recent CDMSlite and LUX data, assuming that the dark matter consists of light WIMPs, with mass close to 10 GeV/c{sup 2} with spin-independent and isospin-conserving or isospin-violating interactions. We compare the data with a standard model for the dark halo of our galaxy and also in a halo-independent manner. In our standard-halo analysis, we find that for isospin-conserving couplings, CDMSlite and LUX together exclude the DAMA, CoGeNT, CDMS-II-Si, and CRESST-II possible WIMP signal regions. For isospin-violating couplings instead, we find that a substantial portion of the CDMS-II-Si region is compatible with all exclusion limits. In our halo-independent analysis, we find that for isospin-conserving couplings, the situation is of strong tension between the positive and negative results, as it was before the LUX and CDMSlite bounds, which turn out to exclude the same possible WIMP signals as previous limits. For isospin-violating couplings, we find that LUX and CDMS-II-Si bounds together exclude or severely constrain the DAMA, CoGeNT and CRESST-II possible WIMP signals.

  19. Monolithic Ge-on-Si lasers for integrated photonics

    E-Print Network [OSTI]

    Liu, Jifeng

    We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

  20. Is there a risk from not using GE animals?

    E-Print Network [OSTI]

    Murray, James D.; Maga, Elizabeth A.

    2010-01-01

    Is there a risk from not using GE animals? James D. Murray •rst genetically engi- neered (GE) plants and animals forthe debate often focuses on GE as a technique that is used

  1. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  2. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  3. Ge-on-Si laser for silicon photonics

    E-Print Network [OSTI]

    Camacho-Aguilera, Rodolfo Ernesto

    2013-01-01

    Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

  4. Materials science and design for germanium monolithic light source on silicon

    E-Print Network [OSTI]

    Cai, Yan, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    Germanium (Ge) is an optically active material with the advantages of Si-CMOS compatibility and monolithic integration. It has great potential to be used as the light emitter for Si photonics. Tensile strain and n-type ...

  5. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

    SciTech Connect (OSTI)

    Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2013-08-19

    The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

  6. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  7. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis An error occurred. Try watching this video on www.youtube.com, or enable...

  8. Work & Life at San Ramon | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    new window) Click to share on Tumblr (Opens in new window) Employee Organizations GE Software Women's Network TBD Celebrations GE Software Technology Conference This event allows...

  9. Rocket Science? No, It's Harder | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    says Juan Albeniz, Business Program Manager, Oil & Gas at GE Global Research Europe. Juan Albeniz, Business Program Manager, Oil & Gas at GE Global Research, Europe Juan...

  10. Lighting in the Library

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    by your library lights E Kilowatt-hours consumed by your library lights F Annual cost of operating your library lights H Current lighting index for your library ...

  11. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212Elective* Elective* AB E 311 ABE 313 ABE 312 GE 348#ABE 323 co-requisite ABE 327 HSS#@ HSS#@ ABE 324 GE 300# ABE 395 4TH YEAR ABE Elec* ABE Elec* ABE Elec*ABE 422 GE 449# Ag Elec* T.E.* T.E.* ABE Elec* Ag Elec

  12. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect (OSTI)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)] [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

    2014-02-15

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  13. Mechanism of the Initial Oxidation of Hydrogen andHalogen Terminated Ge(111) Surfaces in Air

    SciTech Connect (OSTI)

    Sun, Shiyu; /Stanford U., Phys. Dept.; Sun, Yun; Liu, Zhi; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL

    2006-08-23

    The initial stage of the oxidation of Ge(111) surfaces etched by HF, HCl and HBr solutions is systematically studied using synchrotron radiation photoelectron spectroscopy (SR-PES). We perform controlled experiments to differentiate the effects of different oxidation factors. SR-PES results show that both moisture and oxygen contribute to the oxidation of the surfaces; however, they play different roles in the oxidation process. Moisture effectively replaces the hydrogen and halogen termination layers with hydroxyl (OH), but hardly oxidizes the surfaces further. On the other hand, dry oxygen does not replace the termination layers, but breaks the Ge-Ge back bonds and oxidizes the substrates with the aid of moisture. In addition, room light enhances the oxidation rate significantly.

  14. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect (OSTI)

    Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-21

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  15. Light's Darkness

    ScienceCinema (OSTI)

    Padgett, Miles [University of Glasgow, Glasgow, Scotland

    2010-01-08

    Optical vortices and orbital angular momentum are currently topical subjects in the optics literature. Although seemingly esoteric, they are, in fact, the generic state of light and arise whenever three or more plane waves interfere. To be observed by eye the light must be monochromatic. Laser speckle is one such example, where the optical energy circulates around each black spot, giving a local orbital angular momentum. This talk with report three on-going studies. First, when considering a volume of interfering waves, the laser specs map out threads of complete darkness embedded in the light. Do these threads form loops? Links? Or even knots? Second, when looking through a rapidly spinning window, the image of the world on the other side is rotated: true or false? Finally, the entanglement of orbital angular momentum states means measuring how the angular position of one photons sets the angular momentum of another: is this an angular version of the EPR (Einstein, Podolsky, and Rosen) paradox?

  16. LIGHT PHOTINOS AS DARK MATTER

    E-Print Network [OSTI]

    Glennys R. Farrar; Edward W. Kolb

    1995-04-24

    There are good reasons to consider models of low-energy supersymmetry with very light photinos and gluinos. In a wide class of models the lightest $R$-odd, color-singlet state containing a gluino, the $\\r0$, has a mass in the 1-2 GeV range and the slightly lighter photino, $\\pho$, would survive as the relic $R$-odd species. For the light photino masses considered here, previous calculations resulted in an unacceptable photino relic abundance. But we point out that processes other than photino self-annihilation determine the relic abundance when the photino and $R^0$ are close in mass. Including $\\r0\\longleftrightarrow\\pho$ processes, we find that the photino relic abundance is most sensitive to the $\\r0$-to-$\\pho$ mass ratio, and within model uncertainties, a critical density in photinos may be obtained for an $\\r0$-to-$\\pho$ mass ratio in the range 1.2 to 2.2. We propose photinos in the mass range of 500 MeV to 1.6 GeV as a dark matter candidate, and discuss a strategy to test the hypothesis.

  17. Types of Lights Types of Lights

    E-Print Network [OSTI]

    1 Types of Lights Types of Lights q So far we have studied point lights ­ Radiate in all direc7ons q Other lights ­ Direc7onal lights (posi7on-independent) ­ Spotlights #12;2 Direc1onal Lights q Shine in a single, uniform direc7on q All rays

  18. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  19. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    I never thought I would get the incredible opportunity to become a summer intern at the GE Global Research Center, amongst such brilliant and tenacious individuals. I have been...

  20. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Niskayuna, NY, Christine is responsible for working with both R&D leaders at GE's industrial businesses and with strategic partners to set strategy for growth, and to...

  1. Light Computing

    E-Print Network [OSTI]

    Gordon Chalmers

    2006-10-13

    A configuration of light pulses is generated, together with emitters and receptors, that allows computing. The computing is extraordinarily high in number of flops per second, exceeding the capability of a quantum computer for a given size and coherence region. The emitters and receptors are based on the quantum diode, which can emit and detect individual photons with high accuracy.

  2. First observation of temperature dependent lightinduced response of Ge25As10Se65 thin films

    E-Print Network [OSTI]

    Khan, Pritam; Deshpande, Uday; Adarsh, K V

    2015-01-01

    Ge rich ternary chalcogenide glasses (ChG) exhibit photobleaching (PB) when illuminated with bandgap light and such an effect is originating from the combined effect of intrinsic structural changes and photo-oxidation. In a sharp contradict to these previous observations, in this letter, we demonstrate for the first time that Ge rich Ge25As10Se65 ChG thin films exhibit photodarkening (PD) at 20 K and PB at 300 and 420 K for continuous illumination of ~ 3 hours. Strikingly, the temporal evolution of PD/PB show distinct characteristics at the temperatures of illumination and provide valuable information on the light induced structural changes. Further, structure specific far infrared (FIR) absorption measurements give direct evidence of different structural units involved in PD/PB at the contrasting temperatures. By comparing the lightinduced effects in vacuum and air, we conclude that intrinsic structural changes dominate over photo-oxidation in the observed PB in Ge25As10Se65 ChG thin films.

  3. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Internet and Brilliant Factory. This transition marks another chapter in GE's transformation to become the world's premiere Digital Industrial company. Enabled by a...

  4. Be a part of something bigger than yourself GE Healthcare

    E-Print Network [OSTI]

    Rimon, Elon

    Be a part of something bigger than yourself GE Healthcare Position: Mechanical Engineer as a contractor · Working at GE site at Tirat-Carmel. · Start: immediately · Duration 6-10 months, with optional elongation. ElgemsMoked@ge.com-CV www.gehealthcare.com We are GE Healthcare, a $17 billion division

  5. UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 201213 Includes course titles and Schedule of Classes designations

    E-Print Network [OSTI]

    Loudon, Catherine

    UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 2012­13 Includes course titles and Schedule of Classes designations GENERAL EDUCATION (GE) REQUIREMENT UCI is committed undergraduates complete a set of general education (GE) requirements. General education courses introduce

  6. 2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director of the National Institute for Advanced

    E-Print Network [OSTI]

    2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director, and emendation of all sorts of newly discovered texts (mostly found at archaeological sites). Professor Ge University, Professor Ge taught at Tsinghua University for a number of years. He is known for many important

  7. Measurement of the direct energy gap of coherently strained SnxGe1x Ge,,001... heterostructures

    E-Print Network [OSTI]

    Atwater, Harry

    Measurement of the direct energy gap of coherently strained SnxGe1Àx ÕGe,,001... heterostructures The direct energy gap has been measured for coherently strained SnxGe1 x alloys on Ge 001 substrates with 0 for coherently strained SnxGe1 x alloys indicates a large alloy contribution and a small strain contribution

  8. GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising

    E-Print Network [OSTI]

    de Lijser, Peter

    GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising 9% 13% 11% 13% 10% 8% Faculty can easily advise students on GE requirements 10% 18% 9% 24% 33% 11% Staff academic advisors can easily advise students on GE requirements 8% 11

  9. On The Origin of Light Dark Matter Species

    SciTech Connect (OSTI)

    Essig, Rouven; Kaplan, Jared; Schuster, Philip; /SLAC; Toro, Natalia; /Stanford U., Phys. Dept.

    2010-06-04

    TeV-mass dark matter charged under a new GeV-scale gauge force can explain electronic cosmic-ray anomalies. We propose that the CoGeNT and DAMA direct detection experiments are observing scattering of light stable states 'GeV-Matter' that are charged under this force and constitute a small fraction of the dark matter halo. Dark higgsinos in a supersymmetric dark sector are natural candidates for GeV-Matter that scatter off protons with a universal cross-section of 5 x 10{sup -38} cm{sup 2} and can naturally be split by 10-30 keV so that their dominant interaction with protons is down-scattering. As an example, down-scattering of an O(5) GeV dark higgsino can simultaneously explain the spectra observed by both CoGeNT and DAMA. The event rates in these experiments correspond to a GeV-Matter abundance of 0.2-1% of the halo mass density. This abundance can arise directly from thermal freeze-out at weak coupling, or from the late decay of an unstable TeV-scale WIMP. Our proposal can be tested by searches for exotics in the BaBar and Belle datasets.

  10. Relaxation and recombination processes in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

    2013-12-04

    The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

  11. A light scalar WIMP through the Higgs portal?

    E-Print Network [OSTI]

    Michel H. G. Tytgat

    2010-12-02

    In these proceedings, I report on the status of a simple singlet scalar dark matter model in the light of recent results from both direct detection experiments, in particular DAMA, CoGeNT, CDMS-II and Xenon10/100, and indirect searches, in particular Fermi-LAT. Specifically, I confront the light scalar WIMP candidates, M_DM ~ few GeV, that are consistent with CoGeNT and/or DAMA, to constraints that may be set using the recent Fermi-LAT data on Milky Way dwarf spheroidal galaxies (dSphs) and the isotropic diffuse gamma-ray emission. I show that the latter observations set relevant exclusion limits on the lightest WIMP candidates.

  12. A light scalar wimp, the Higgs portal, and DAMA

    E-Print Network [OSTI]

    Michel H. G. Tytgat

    2009-06-16

    In these proceedings, we report on the possible signatures of a light scalar WIMP, a dark matter candidate with M_DM ~ few GeV, which is supposed to interact with the Standard Model particles through the Higgs, and which might be related to the annual modulation observed by DAMA.

  13. Residential Lighting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMassR&D100Nationalquestionnaires 0 Averagequestionnaires 7tniLighting Sign In

  14. LED Lighting Basics

    Broader source: Energy.gov [DOE]

    Light-Emitting diodes (LEDs) efficiently produce light in a fundamentally different way than any legacy or traditional source of light.

  15. Demand Responsive Lighting: A Scoping Study

    E-Print Network [OSTI]

    Rubinstein, Francis; Kiliccote, Sila

    2007-01-01

    Figure 17: Description of the GE Wireless Energy Managementresponse effectiveness of the GE Wireless Energy Managementtest facility. The GE Wireless Energy Management system was

  16. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect (OSTI)

    Gatti, E., E-mail: eleonora.gatti@mater.unimib.it; Pezzoli, F.; Grilli, E. [L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy); Isa, F.; Chrastina, D.; Isella, G. [L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy); Müller Gubler, E. [Electron Microscopy Center of ETH Zürich (EMEZ), August-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

    2014-07-28

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3??m thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3?×?10{sup 7?}cm{sup ?2} and an interdiffusion layer at the well/barrier interface of 2.1?nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  17. Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay, Jonathan E. Roth, Rebecca K. Scheavitz, Yu-Hsuan Kuo*

    E-Print Network [OSTI]

    Miller, David A. B.

    Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay University, Taipei, Taiwan Abstract: We demonstrate an optical link on silicon employing Ge/SiGe quantum well of the quantum-confined Stark effect (QCSE) on silicon using Ge/SiGe quantum wells opened up the possibility

  18. 23 6 12 8:00 III-V/Ge CMOS

    E-Print Network [OSTI]

    Katsumoto, Shingo

    23 6 12 8:00 - 1 - 1. : III-V/Ge CMOS ~ 200%~ 2. : III-V (Ge) III-V/Ge CMOS (Si) 200% III-V/Ge CMOS 200% III-V/Ge CMOS () () () () III-V III-V/Ge CMOS (1) III-V Ge III-V/Ge CMOS (2) III-V-OI MOSFET (3) III-V/Ge CMOS "2011 Symposia on VLSI

  19. Measurement of the neutron-capture cross section of ??Ge and ??Ge below 15 MeV and its relevance to 0??? decay searches of ??Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01

    The neutron radiative-capture cross section of ??Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ~86% ??Ge and ~14% ??Ge used in the 0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the ³H(p,n)³He, ²H(d,n)³He and ³H(d,n)?He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for ??Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy wasmore »used to determine the ?-ray activity of the daughter nuclei of interest. For the ??Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the ??Ge(n,?)??Ge reaction, the present data are about a factor of two larger than predicted. It was found that the ??Ge(n,?)??Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the ??Ge(n,?)??Ge yield due to the larger cross section of the former reaction.« less

  20. Sandia Energy - (Lighting and) Solid-State Lighting: Science...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Lighting and) Solid-State Lighting: Science, Technology, Economic Perspectives Home Energy Research EFRCs Solid-State Lighting Science EFRC (Lighting and) Solid-State Lighting:...

  1. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  2. Updated 8/28/2014 New GE Requirements & Environmental Studies Advising

    E-Print Network [OSTI]

    Updated 8/28/2014 New GE Requirements & Environmental Studies Advising Course Concentration(s) Lower Division GE Upper Division GE Overlay(s) AIS 310

  3. Viscosity Measurement G.E. Leblanc

    E-Print Network [OSTI]

    Kostic, Milivoje M.

    30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic must be supplied (1) to create viscous flow units by breaking bonds between atoms and molecules, and (2

  4. Sustainable Office Lighting Options

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Sustainable Office Lighting Options Task Lighting: Task lighting is a localized method of lighting a workspace so that additional, unnecessary lighting is eliminated, decreasing energy usage and costs. Illumination levels in the targeted work areas are higher with task lighting than with the ambient levels

  5. Thickness effect on the structural and electrical properties of poly-SiGe films

    SciTech Connect (OSTI)

    Asafa, T.B., E-mail: asafa@kfupm.edu.sa [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications, Riyadh (Saudi Arabia); imec, Kapeldreef 75, 3001 Leuven (Belgium); King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Witvrouw, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Schneider, D. [Fraunhofer-Institute for Material and Beam Technology, Winterbergstrasse 28, Dresden (Germany); Moussa, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Tabet, N.; Said, S.A.M. [King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia)

    2014-01-01

    Graphical abstract: - Highlights: • Stress and Young's modulus of poly-SiGe film are linked to the grain columnar structure. • The above properties remain unchanged for poly-SiGe films thicker than 40 nm. • The point of transition is close to the electron mean free path for SiGe. • Both the resistivity and Hall mobility follow a similar trend. - Abstract: As lateral dimensions of electromechanical devices are scaled down to length scales comparable to electron mean free paths, the influence of thickness effect on their properties becomes sine qua non. This paper presents a detailed study of thickness effect on the Young's modulus, residual stress, resistivity and Hall mobility of ultrathin poly-Si{sub 11}Ge{sub 89} films deposited by low pressure chemical vapour deposition. The Young's moduli for the films thicker than ?40 nm are close to the bulk value (135 GPa) while those of the thinner films are much lower. The reduction in resistivity and subsequent improved Hall mobility as thickness increases are discussed in light of surface morphology which is evident from atomic microscopy images. The near constant values of Young's modulus, resistivity and Hall mobility for the films thicker than ?40 nm are attributed to the columnar grain structure as confirmed by the transmission electron microscopy images.

  6. Effects of Ge replacement in GeTe by [Ag+Sb] on thermoelectric...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in GeTe by Ag+Sb on thermoelectric properties and NMR spectra Requirements for student: general physics and chemistry courses, and desire to work in experimental laboratory. This...

  7. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    SciTech Connect (OSTI)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel, E-mail: daniel.chrastina@polimi.it; Mondiali, Valeria; Isella, Giovanni [L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Bollani, Monica [IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy)

    2014-09-21

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  8. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    offered 19 programs and counted 375 participants; this year, Girls Who Code will offer 60 programs reaching close to 1,200 girls in nine cities nationwide. GE joins other...

  9. Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis...

  10. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Innovation and Manufacturing in Europe 2-4-13-v-3d-printing-medical-devices Additive Manufacturing Demonstration at GE Global Research 2-3-10-v Crowdsourcing...

  11. What Happens in Research-Based Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    paths we have at GE Global Research ("GE Leaders are Researchers Too",). The field of gas turbine heat transfer is growing in importance, and as a result, we have a lot of job...

  12. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    SciTech Connect (OSTI)

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433 (China); Chen, D. D.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, College of Science, Shanghai University, Shanghai 200444 (China)

    2014-07-14

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488?nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325?nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  13. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom); Dobbie, A.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7A (United Kingdom)

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1?x}Ge{sub x} alloys for germanium concentrations x???0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28?Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ?2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x?=?1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  14. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore »dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  15. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    SciTech Connect (OSTI)

    Cecchi, S., E-mail: stefano.cecchi@mdm.imm.cnr.it; Chrastina, D.; Frigerio, J.; Isella, G. [L-NESS, Dipartimento di Fisica, Politecnico di Milano–Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Gatti, E.; Guzzi, M. [L-NESS, Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 53, I-20126 Milano (Italy); Müller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Auguste-Piccard-Hof 1, CH-8093 Zurich (Switzerland); Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-03-07

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1??m thick Si{sub 1?x}Ge{sub x} buffers (with x?>?0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475?°C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1?x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

  16. Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*

    E-Print Network [OSTI]

    Bowers, John

    Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

  17. MOTION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2011-01-01

    MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.OF ELECTRON-HOLE DROPS IN Ge R M Westervelt, J C Culbertson

  18. Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1?x]/Ge interface

    E-Print Network [OSTI]

    Mazzeo, G.

    Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate ...

  19. Signatures for Squarks in the Light Gaugino Scenario

    E-Print Network [OSTI]

    Glennys R. Farrar

    1996-02-17

    When the gluino is light and long lived, missing energy is a poor signature for both squarks and gluinos. Instead, squark pair production leads to events with $\\ge 4$ jets. If a chargino can decay to squark and quark, missing energy is also a poor signature for the chargino. Properties of 4-jet events originating from squarks are discussed. ALEPH's preliminary report of an excess of 4-jet events, with a peak in total dijet mass of 109 GeV, is analyzed in terms of $S_q S_q^*$ and chargino pair production.

  20. Phenomenology of Light Gauginos: I. Motivation, Masses, Lifetimes and Limits

    E-Print Network [OSTI]

    Glennys R. Farrar

    1995-08-14

    I explore an economical variant on supersymmetric standard models which may be indicated on cosmological grounds and is shown to have no SUSY-CP problem. Demanding radiative electroweak symmetry breaking suggests that the Higgs is light; other scalar masses may be ~ 100-200 GeV or less. In this case the gluino and photino, while massless at tree level, have 1-loop masses m(gluino) ~ 100 - 600 MeV and m(photino) ~ 100 - 1000 MeV. New hadrons with mass ~ 1 - 3 GeV are predicted and their lifetimes estimated. Existing experimental limits are discussed.

  1. High Quality Down Lighting Luminaire with 73% Overall System Efficiency

    SciTech Connect (OSTI)

    Robert Harrison; Steven C. Allen; Joseph Bernier; Robert Harrison

    2010-08-31

    This report summarizes work to develop a high flux, high efficiency LED-based downlight at OSRAM SYLVANIA under US Department of Energy contract DE-FC26-08NT01582. A new high power LED and electronic driver were developed for these downlights. The LED achieved 100 lumens per watt efficacy and 1700 lumen flux output at a correlated color temperature of 3500K. The driver had 90% electrical conversion efficiency while maintaining excellent power quality with power factor >0.99, and total harmonic distortion <10%. Two styles of downlights using the LED and driver were shown to exceed the project targets for steady-state luminous efficacy and flux of 70 lumens per watt and 1300 lumens, respectively. Compared to similar existing downlights using compact fluorescent or LED sources, these downlights had much higher efficacy at nearly the same luminous flux.

  2. Lattice study of an electroweak phase transition at m{sub h} ? 126 GeV

    SciTech Connect (OSTI)

    Laine, M.; Nardini, G.; Rummukainen, K. E-mail: germano@physik.uni-bielefeld.de

    2013-01-01

    We carry out lattice simulations of a cosmological electroweak phase transition for a Higgs mass m{sub h} ? 126 GeV. The analysis is based on a dimensionally reduced effective theory for an MSSM-like scenario including a relatively light coloured SU(2)-singlet scalar, referred to as a right-handed stop. The non-perturbative transition is stronger than in 2-loop perturbation theory, and may offer a window for electroweak baryogenesis. The main remaining uncertainties concern the physical value of the right-handed stop mass which according to our analysis could be as high as m{sub t-tilde{sub R}} ? 155 GeV; a more precise effective theory derivation and vacuum renormalization than available at present are needed for confirming this value.

  3. Dirac gauginos, R symmetry and the 125 GeV Higgs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bertuzzo, Enrico; Frugiuele, Claudia; Grégoire, Thomas; Pontón, Eduardo

    2015-04-01

    We study a supersymmetric scenario with a quasi exact R-symmetry in light of the discovery of a Higgs resonance with a mass of 125 GeV. In such a framework, the additional adjoint superfields, needed to give Dirac masses to the gauginos, contribute both to the Higgs mass and to electroweak precision observables. We analyze the interplay between the two aspects, finding regions in parameter space in which the contributions to the precision observables are under control and a 125 GeV Higgs boson can be accommodated. We estimate the fine-tuning of the model finding regions of the parameter space still unexploredmore »by the LHC with a fine-tuning considerably improved with respect to the minimal supersymmetric scenario. In particular, sizable non-holomorphic (non-supersoft) adjoints masses are required to reduce the fine-tuning.« less

  4. Dirac gauginos, R symmetry and the 125 GeV Higgs

    SciTech Connect (OSTI)

    Bertuzzo, Enrico; Frugiuele, Claudia; Grégoire, Thomas; Pontón, Eduardo

    2015-04-01

    We study a supersymmetric scenario with a quasi exact R-symmetry in light of the discovery of a Higgs resonance with a mass of 125 GeV. In such a framework, the additional adjoint superfields, needed to give Dirac masses to the gauginos, contribute both to the Higgs mass and to electroweak precision observables. We analyze the interplay between the two aspects, finding regions in parameter space in which the contributions to the precision observables are under control and a 125 GeV Higgs boson can be accommodated. We estimate the fine-tuning of the model finding regions of the parameter space still unexplored by the LHC with a fine-tuning considerably improved with respect to the minimal supersymmetric scenario. In particular, sizable non-holomorphic (non-supersoft) adjoints masses are required to reduce the fine-tuning.

  5. Properties of excited states in {sup 77}Ge.

    SciTech Connect (OSTI)

    Kay, B. P.; Chiara, C. J.; Schiffer, J. P.; Kondev, F. G.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; McCutchan, E. A.; Seweryniak, D.; Stefanescu, I.; Univ. of Maryland; Horia-Hulubei National Inst. for Physics and Nuclear Engineering

    2009-07-01

    The nucleus {sup 77}Ge was studied through the {sup 76}Ge({sup 13}C,{sup 12}C){sup 77}Ge reaction at a sub-Coulomb energy. The angular distributions of rays depopulating excited states in {sup 77}Ge were measured in order to constrain spin and parity assignments. Some of these assignments are of use in connection with neutrinoless double beta decay, where the population of states near the Fermi surface of {sup 76}Ge was recently explored using transfer reactions.

  6. Particle Production at 3 GeV X. Ding, UCLA

    E-Print Network [OSTI]

    McDonald, Kirk

    = 50m 0.02976 (neg: 0.01206, pos: 0.01770) Carbon 3 GeV, Z = 0m 0.03341 (neg: 0.01370, pos: 0.01971) Mercury 3 GeV, Z = 50 m 0.02096 (neg: 0.01070, pos: 0.01026) Mercury 3 GeV, Z = 0 m 0.02496 (neg: 0.01273, pos: 0.01223) Mercury 8 GeV, Z = 50 m 0.0263 (neg: 0.0136, pos: 0.0127) Mercury 8 GeV, Z = 0m 0

  7. Lighting Options for Homes.

    SciTech Connect (OSTI)

    Baker, W.S.

    1991-04-01

    This report covers many aspects of various lighting options for homes. Types of light sources described include natural light, artificial light, incandescent lamps, fluorescent lamps, and high intensity discharge lamps. A light source selection guide gives the physical characteristics of these, design considerations, and common applications. Color, strategies for efficient lighting, and types of lighting are discussed. There is one section giving tips for various situations in specific rooms. Rooms and types of fixtures are shown on a matrix with watts saved by using the recommended type lighting for that room and room location. A major emphasis of this report is saving energy by utilizing the most suitable, recommended lighting option. (BN)

  8. On the origin of GeV emission in gamma-ray bursts

    SciTech Connect (OSTI)

    Beloborodov, Andrei M.; Hascoët, Romain; Vurm, Indrek, E-mail: amb@phys.columbia.edu [Physics Department and Columbia Astrophysics Laboratory, Columbia University, 538 West 120th Street, New York, NY 10027 (United States)

    2014-06-10

    The most common progenitors of gamma-ray bursts (GRBs) are massive stars with strong stellar winds. We show that the GRB blast wave in the wind should emit a bright GeV flash. It is produced by inverse-Compton cooling of the thermal plasma behind the forward shock. The main part of the flash is shaped by scattering of the prompt MeV radiation (emitted at smaller radii) which streams through the external blast wave. The inverse-Compton flash is bright due to the huge e {sup ±} enrichment of the external medium by the prompt radiation ahead of the blast wave. At late times, the blast wave switches to normal synchrotron-self-Compton cooling. The mechanism is demonstrated by a detailed transfer simulation. The observed prompt MeV radiation is taken as an input of the simulation; we use GRB 080916C as an example. The result reproduces the GeV flash observed by the Fermi telescope. It explains the delayed onset, the steep rise, the peak flux, the time of the peak, the long smooth decline, and the spectral slope of GeV emission. The wind density required to reproduce all these features is typical of Wolf-Rayet stars. Our simulation predicts strong TeV emission 1 minute after the burst trigger; then a cutoff in the observed high-energy spectrum is expected from absorption by extragalactic background light. In addition, a bright optical counterpart of the GeV flash is predicted for plausible values of the magnetic field; such a double (optical+GeV) flash has been observed in GRB 130427A.

  9. Mobile lighting apparatus

    DOE Patents [OSTI]

    Roe, George Michael; Klebanoff, Leonard Elliott; Rea, Gerald W; Drake, Robert A; Johnson, Terry A; Wingert, Steven John; Damberger, Thomas A; Skradski, Thomas J; Radley, Christopher James; Oros, James M; Schuttinger, Paul G; Grupp, David J; Prey, Stephen Carl

    2013-05-14

    A mobile lighting apparatus includes a portable frame such as a moveable trailer or skid having a light tower thereon. The light tower is moveable from a stowed position to a deployed position. A hydrogen-powered fuel cell is located on the portable frame to provide electrical power to an array of the energy efficient lights located on the light tower.

  10. Role of nucleation sites on the formation of nanoporous Ge

    SciTech Connect (OSTI)

    Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2012-09-24

    The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

  11. Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b , Sarah R passivation of Ge(100) surface via formation of Ge-N and Ge-O surface species was studied using scanning cyclotron resonance (ECR) plasma source formed an ordered Ge-N structure on a Ge(100) surface at 500o C. DFT

  12. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  13. Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner *Corresponding author: rschaevitz@stanford.edu Abstract: Photocurrent measurements in Ge quantum wells parameters for design of high-performance SiGe/Ge quantum well optoelectronics on silicon. Germanium

  14. Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo bandwidth have been demonstrated [4]. 2. Quantum well design Ge is an indirect band gap material, but it has. In order to have good quantum confinement, SiGe barriers are used since Si and Ge have a very high direct

  15. Measuring Ambient Densities and Lorentz Factors of Gamma-Ray Bursts from GeV and Optical Observations

    E-Print Network [OSTI]

    Hascoët, Romain; Beloborodov, Andrei M

    2015-01-01

    Fermi satellite discovered that cosmological gamma-ray bursts (GRBs) are accompanied by long GeV flashes. In two GRBs, an optical counterpart of the GeV flash has been detected. Recent work suggests that the GeV+optical flash is emitted by the external blast wave from the explosion in a medium loaded with copious $e^\\pm$ pairs. The full light curve of the flash is predicted by a first-principle radiative transfer simulation and can be tested against observations. Here we examine a sample of 7 bursts with best GeV+optical data and test the model. We find that the observed light curves are in agreement with the theoretical predictions and allow us to measure three parameters for each burst: the Lorentz factor of the explosion, its isotropic kinetic energy, and the external density. With one possible exception of GRB 090510 (which is the only short burst in the sample) the ambient medium is consistent with a wind from a Wolf-Rayet progenitor. The wind density parameter $A=\\rho r^2$ varies in the sample around $1...

  16. Practical image based lighting 

    E-Print Network [OSTI]

    Lee, Jaemin

    2003-01-01

    information is lighting. Image based lighting that is developed to recover illumination information of the real world from photographs has recently been popular in computer graphics. In this thesis we present a practical image based lighting method. Our...

  17. Light in the city

    E-Print Network [OSTI]

    Srinivasan, Kavita, 1976-

    2002-01-01

    This thesis focuses on enhancing the awareness of light for the pedestrian,and using light as a way of revealing the structure of the city and its relation to the cosmos. It proposes that aesthetic qualities of light inform ...

  18. Advances in Lighting 

    E-Print Network [OSTI]

    Tumber, A. J.

    1981-01-01

    Increasing electricity costs have made a significant impact on lighting. The Illuminating Engineering society (I.E.S.) and the lighting industry are producing new standards, procedures and products to make lighting more appropriate and energy...

  19. Natural lighting and skylights 

    E-Print Network [OSTI]

    Evans, Benjamin Hampton

    1961-01-01

    There are many physiological and psychological factors which enter into the proper design of space for human occupancy. One of these elements is light. Both natural light and manufactured light are basic tools with which any designer must work...

  20. Specific light in sculpture

    E-Print Network [OSTI]

    Powell, John William

    1989-01-01

    Specific light is defined as light from artificial or altered natural sources. The use and manipulation of light in three dimensional sculptural work is discussed in an historic and contemporary context. The author's work ...

  1. Advanced Demand Responsive Lighting

    E-Print Network [OSTI]

    Advanced Demand Responsive Lighting Host: Francis Rubinstein Demand Response Research Center demand responsive lighting systems ­ Importance of dimming ­ New wireless controls technologies · Advanced Demand Responsive Lighting (commenced March 2007) #12;Objectives · Provide up-to-date information

  2. Light Duty Combustion Research: Advanced Light-Duty Combustion...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Light Duty Combustion Research: Advanced Light-Duty Combustion Experiments Light Duty Combustion Research: Advanced Light-Duty Combustion Experiments 2009 DOE Hydrogen Program and...

  3. Lighting in Commercial Buildings

    U.S. Energy Information Administration (EIA) Indexed Site

    are also under consideration. Outside the DOE, the Environmental Protection Agency's Green Lights program promotes energy-efficient lighting as a means to reducing...

  4. Lighting in Commercial Buildings

    U.S. Energy Information Administration (EIA) Indexed Site

    Motivation and Computation of Lighting Measures Floorspace by Lighting Equipment Configuration As described in Appendix A, for each building b, the CBECS data set has the total...

  5. Lighting in Commercial Buildings

    U.S. Energy Information Administration (EIA) Indexed Site

    more comprehensive understanding of commercial lighting and the potential for lighting energy savings. Steps to build on this analysis can be taken in many directions. One...

  6. Leavenworth Tree Lighting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Join HERO for our annual Leavenworth Tree Lighting Ceremony & Shopping SATURDAY DECEMBER 12, 2015 Leavenworth Christmas Lighting Festival Visitors return year after year for some...

  7. Lighting in Commercial Buildings

    U.S. Energy Information Administration (EIA) Indexed Site

    light by passing electricity through mercury vapor, which causes the fluorescent coating to glow or fluoresce. High-Efficiency Ballast (HEB): A lighting conservation feature...

  8. Exciting White Lighting

    Broader source: Energy.gov [DOE]

    Windows that emit light and are more energy efficient? Universal Display’s PHOLED technology enables windows that have transparent light-emitting diodes in them.

  9. Interface and nanostructure evolution of cobalt germanides on Ge(001)

    SciTech Connect (OSTI)

    Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

    2014-02-21

    Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

  10. ({lambda}, p) Spectrum Analysis in p+A Interactions at 10 GeV/c

    SciTech Connect (OSTI)

    Aslanyan, P. Zh.; Emelyanenko, V. N.

    2007-06-13

    Experimental data from the 2m propane bubble chamber have been analyzed for exotic baryon states search. A number of peculiarities were found in the effective mass spectra of: {lambda}{pi}+({sigma}*+(1382),PDG), {lambda}p and {lambda}pp subsystems. A few events detected on the photographs of the propane bubble chamber exposed to a 10 GeV/c proton beam, were interpreted as S=-2 H0 light(

  11. Mid infrared optical properties of Ge/Si quantum dots with different doping level

    SciTech Connect (OSTI)

    Sofronov, A. N.; Firsov, D. A.; Vorobjev, L. E.; Shalygin, V. A.; Panevin, V. Yu.; Vinnichenko, M. Ya.; Tonkikh, A. A.; Danilov, S. N.

    2013-12-04

    Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.

  12. A Bunch Length Monitor for JLab 12 GeV Upgrade

    SciTech Connect (OSTI)

    Ahmad, Mahmoud Mohamad Ali; Freyberger, Arne P.; Gubeli, Joseph F.; Krafft, Geoffrey A.

    2013-12-01

    A continuous non-invasive bunch length monitor for the 12 GeV upgrade of Jefferson Lab will be used to determine the bunch length of the beam. The measurement will be done at the fourth dipole of the injector chicane at 123 MeV using the coherent synchrotron light emitted from the dipole. The estimated bunch length is 333 fs. A vacuum chamber will be fabricated and a Radiabeam real time interferometer will be used. In this paper, background, the estimated calculations and the construction of the chamber will be discussed.

  13. Searches for exotic decays of the 125 GeV Higgs boson and the lightest neutral Higgs boson in NMSSM with the ATLAS detector

    E-Print Network [OSTI]

    Looper, Kristina Anne; The ATLAS collaboration

    2015-01-01

    We present the results of searches for non-Standard Model decays of the 125 GeV Higgs boson, including decays to dark sector bosons, lepton flavour violating and flavour changing decays, and decays to a light pseudoscalar neutral Higgs boson (a) predicted by the next-Minimal-Supersymmetric-Standard-Model.

  14. Lighting Controls | Department of Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Controls Lighting Controls Use lighting controls to automatically turn lights on and off as needed, and save energy. | Photo courtesy of iStockphoto.comMaliketh. Use lighting...

  15. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclearDNP 20082 P2014 CollegiateVanderbilt, GE Team

  16. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding in Actinide SandwichCrayCrosscuttingGE, MIT Build

  17. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding in Actinide SandwichCrayCrosscuttingGE, MIT

  18. Patent Record Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| Department ofStephenSkinner,Past and Present EERE Budget PastGE's

  19. Game Changing Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear PhysicsGE GlobalGetting&Tools »GambitI

  20. Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy spectroscopy

    E-Print Network [OSTI]

    Neumark, Daniel M.

    Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy The low-lying states of Ge2 and Ge2 are probed using negative ion zero electron kinetic energy ZEKE spectroscopy. The ZEKE spectrum of Ge2 yields an electron affinity of 2.035 0.001 eV for Ge2, as well as term

  1. Pedestrian Friendly Outdoor Lighting

    SciTech Connect (OSTI)

    Miller, N. J.; Koltai, R. N.; McGowan, T. K.

    2013-12-01

    The GATEWAY program followed two pedestrian-scale lighting projects that required multiple mockups – one at Stanford University in California and the other at Chautauqua Institution in upstate New York. The report provides insight into pedestrian lighting criteria, how they differ from street and area lighting criteria, and how solid-state lighting can be better applied in pedestrian applications.

  2. Cs6Ge8Zn: A Zintl Phase with Isolated Heteroatomic Clusters of Ge8Zn

    E-Print Network [OSTI]

    a single phase of Cs6Ge8Zn.8 The plate-like crystals of the compound are brittle, black, and with coal-like luster. Single-crystal studies unveiled a new type of cluster formation, a dimer of corner different types. The clusters of type A have only a horizontal mirror plane (Cm) while the clusters of type

  3. Study of plutonium disposition using existing GE advanced Boiling Water Reactors

    SciTech Connect (OSTI)

    Not Available

    1994-06-01

    The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the US to dispose of 50 to 100 metric tons of excess of plutonium in a safe and proliferation resistant manner. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing permanent conversion and long-term diversion resistance to this material. The NAS study ``Management and Disposition of Excess Weapons Plutonium identified Light Water Reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a US disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a typical 1155 MWe GE Boiling Water Reactor (BWR) is utilized to convert the plutonium to spent fuel. A companion study of the Advanced BWR has recently been submitted. The MOX core design work that was conducted for the ABWR enabled GE to apply comparable fuel design concepts and consequently achieve full MOX core loading which optimize plutonium throughput for existing BWRs.

  4. LArGe - Active background suppression using argon scintillation for the GERDA $0???$-experiment

    E-Print Network [OSTI]

    M. Agostini; M. Barnabé-Heider; D. Budjáš; C. Cattadori; A. Gangapshev; K. Gusev; M. Heisel; M. Junker; A. Klimenko; A. Lubashevskiy; K. Pelczar; S. Schönert; A. Smolnikov; G. Zuzel

    2015-06-11

    LArGe is a GERDA low-background test facility to study novel background suppression methods in a low-background environment, for future application in the GERDA experiment. Similar to GERDA, LArGe operates bare germanium detectors submersed into liquid argon (1 m$^3$, 1.4 tons), which in addition is instrumented with photomultipliers to detect argon scintillation light. The scintillation signals are used in anti-coincidence with the germanium detectors to effectively suppress background events that deposit energy in the liquid argon. The background suppression efficiency was studied in combination with a pulse shape discrimination (PSD) technique using a BEGe detector for various sources, which represent characteristic backgrounds to GERDA. Suppression factors of a few times $10^3$ have been achieved. First background data of LArGe with a coaxial HPGe detector (without PSD) yield a background index of (0.12$-$4.6)$\\cdot 10^{-2}$ cts/(keV$\\cdot$kg$\\cdot$y) (90% C.L.), which is at the level of GERDA Phase I. Furthermore, for the first time we monitor the natural $^{42}$Ar abundance (parallel to GERDA), and have indication for the $2\

  5. Structure and vibrations of different charge Ge impurity in ?-quartz

    SciTech Connect (OSTI)

    Kislov, A. N., E-mail: a.n.kislov@urfu.ru; Mikhailovich, A. P., E-mail: a.n.kislov@urfu.ru; Zatsepin, A. F., E-mail: a.n.kislov@urfu.ru [Ural Federal University, 19 Mira St., Yekaterinburg, 620002 (Russian Federation)

    2014-10-21

    Atomic structure and localized vibrations of ??SiO{sub 2}:Ge are studied using computer modeling techniques. The simulation was carried out by the lattice dynamics calculation of the local density of vibrational states. Local structures parameters are calculated, localized symmetrized vibrations frequency caused by Ge impurity in different charge states are defined. The movements of atoms located near Ge impurity are analyzed and their contribution into localized vibrations of different type is evaluated.

  6. Tackling light higgsinos at the ILC

    E-Print Network [OSTI]

    Mikael Berggren; Felix Brümmer; Jenny List; Gudrid Moortgat-Pick; Tania Robens; Krzysztof Rolbiecki; Hale Sert

    2013-12-10

    In supersymmetric extensions of the Standard Model, higgsino-like charginos and neutralinos are preferred to have masses of the order of the electroweak scale by naturalness arguments. Such light $\\widetilde{\\chi}^0_1$, $\\widetilde{\\chi}^0_2$ and $\\widetilde{\\chi}^{\\pm}_1$ states can be almost mass degenerate, and their decays are then difficult to observe at colliders. In addition to the generic naturalness argument, light higgsinos are well motivated from a top-down perspective. For instance, they arise naturally in certain models of hybrid gauge-gravity mediation. In the present analysis, we study two benchmark points which have been derived in the framework of such a model, which exhibit mass differences of O(GeV) in the higgsino sector. For chargino pair and neutralino associated production with initial-state photon radiation, we simulate the detector response and determine how accurately the small mass differences, the absolute masses and the cross sections can be measured at the International Linear Collider. Assuming that 500/fb has been collected at each of two beam-polarisations $P(e^+,e^-)=(\\pm 30\\%,\\mp 80\\%)$, we find that the mass differences can be measured to 40-300 MeV, the cross sections to 2-5%, and the absolute masses to 1.5-3.3 GeV, where the range of values correspond to the different scenarios and channels. Based on these observables we perform a parameter fit in the MSSM, from which we infer that the higgsino mass parameter $\\mu$ can be measured to a precision of about $\\Delta\\mu=$2--7 GeV. For the electroweak gaugino mass parameters $M_1$, $M_2$, which are chosen in the multi-TeV range, a narrow region is compatible with the measurements. For both parameters independently, we can determine a lower bound.

  7. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  8. The Proposed Majorana 76Ge Double-Beta Decay Experiment

    SciTech Connect (OSTI)

    Aalseth, Craig E.; Anderson, Dale N.; Arthur, Richard J.; Avignone, Frank T.; Baktash, Cryus; Ball, Thedore; Barabash, Alexander S.; Bertrand, F.; Brodzinski, Ronald L.; Brudanin, V.; Bugg, William; Champagne, A. E.; Chan, Yuen-Dat; Cianciolo, Thomas V.; Collar, J. I.; Creswick, R. W.; Descovich, M.; Di Marco, Marie; Doe, P. J.; Dunham, Glen C.; Efremenko, Yuri; Egerov, V.; Ejiri, H.; Elliott, Steven R.; Emanuel, A.; Fallon, Paul; Farach, H. A.; Gaitskell, R. J.; Gehman, Victor; Grzywacz, Robert; Hallin, A.; Hazma, R.; Henning, R.; Hime, Andrew; Hossbach, Todd W.; Jordan, David V.; Kazkaz, K.; Kephart, Jeremy; King, G. S.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; Lesko, Kevin; Luke, P.; Luzum, M.; Macchiavelli, A. O.; McDonald, A.; Mei, Dongming; Miley, Harry S.; Mills, G. B.; Mokhtarani, A.; Nomachi, Masaharu; Orrell, John L.; Palms, John M.; Poon, Alan; Radford, D. C.; Reeves, James H.; Robertson, R. G. H.; Runkle, Robert C.; Rykaczewski, Krzysztof P.; Saburov, Konstantin; Sandukovsky, Viatcheslav; Sonnenschein, Andrew; Tornow, W.; Tull, C.; van de Water, R. G.; Vanushin, Igor; Vetter, Kai; Warner, Ray A.; Wilkerson, John F.; Wouters, Jan M.; Young , A. R.; Yumatov, V.

    2005-01-01

    The proposed Majorana experiment is based on an array of segmented intrinsic Ge detectors with a total mass of 500 kg of Ge isotopically enriched to 86% in 76Ge. Background reduction will be accomplished by: material selection, detector segmentation, pulse shape analysis, electro-formation of copper parts, and granularity of detector spacing. The predicted experimental sensitivity for measurement of the neutrinoless double-beta decay mode of 76Ge, over a data acquisition period of 5000 kg•y, is ~ 4?1027 y.

  9. GE funds initiative to support STEM initiatives in Oklahoma ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    investment in Oklahoma reflects GE's commitment to skills development for the future. "Growth and development go hand-in-hand with educational excellence, strength in science,...

  10. CMC technology revolutionary for aviation, power | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in new window) Novel CMC technology revolutionizes aircraft engines, turbines CMCs - Ceramic Matrix Composites - are a revolutionary material invented by GE scientists that offer...

  11. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  12. Construction progresses at GE's Oil & Gas Technology Center ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window)...

  13. RADIATION DAMAGE RESISTANCE OF REVERSE ELECTRODE GE COAXIAL DETECTORS

    E-Print Network [OSTI]

    Pehl, Richard H.

    2011-01-01

    Parker, "Radiation Damage of Germanium Detectors", Bull. Am.to radiation damage between the two detectors was clearlyRADIATION DAMAGE RESISTANCE OF REVERSE ELECTRODE GE COAXIAL DETECTORS

  14. GE China Technology Center Wins Top 12 Most Innovative Practices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to our local markets and innovating technologies to meet the most urgent needs of Chinese society. Additionally, GE teams up with local customers to jointly develop innovative...

  15. The Wizard of Schenectady: Charles Proteus Steinmetz | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    week the Smithsonian's "Past Imperfect" blog highlighted a man near and dear to the heart of GE Global Research, Charles Proteus Steinmetz. The article paints a really...

  16. Big Data and Analytics at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    time analytics is required At GE we keep pace with these trends via the Industrial Internet, a highly connected ecosystem of intelligent machines, advanced analytics and people...

  17. A Sneak Peek Into Santa's Smarter Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    legs a break. - An upgraded sleigh frame made from GE's high temperature Ceramic Matrix Composites (CMCs). The CMCs can withstand the heat of entry and reentry in earth's...

  18. Titan propels GE wind turbine research into new territory | ornl...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

  19. Thoughts From the 2012 Whitney Software Symposium | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Big Data, Modeling and Simulation, High Performance Computing and the Industrial Internet as key technological enablers of GE's Software initiatives. We enjoyed speakers from...

  20. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ready to dive in? Apply for the program. GE Software Leadership Program The rise of the Industrial Internet requires a new breed of talent and organizational capability. New...

  1. Dark Matter and Cosmic Rays from Light Gauginos

    E-Print Network [OSTI]

    Glennys R. Farrar

    1997-04-13

    An attractive class of SUSY-breaking mechanisms predicts a photino mass of order 1 GeV. Relic photinos can naturally account for the observed dark matter. Detection of these light photinos is discussed and contrasted with conventional WIMPs. In this scenario the gluino mass is about 100 MeV. The lightest gluino-containing baryon could account for the recently observed ultra-high energy cosmic rays, which violate the GZK bound.

  2. Light Gluino Mass and Condensate from Properties of $?$ and $?'$

    E-Print Network [OSTI]

    Glennys R. Farrar; G. T. Gabadadze

    1997-02-07

    We investigate whether known properties of the $\\eta'$ meson are consistent with its being the Goldstone boson of the spontaneously broken anomaly-free R symmetry required in the light gluino scenario. We fit the masses and $2\\gamma$ decays of the $\\eta$ and $\\eta'$ mesons, and also their production in radiative $J/\\psi$ decays. We find that the $\\eta-\\eta'$ system is well-described in the light gluino scenario, if $m_\\lambda\\simeq (84-144) MeV$ and $ \\simeq -(0.15-0.36) GeV^3$. These values are in the range expected when the gluino gets its mass entirely from radiative corrections.

  3. Optimized Phosphors for Warm White LED Light Engines

    SciTech Connect (OSTI)

    Setlur, Anant; Brewster, Megan; Garcia, Florencio; Hill, M. Christine; Lyons, Robert; Murphy, James; Stecher, Tom; Stoklosa, Stan; Weaver, Stan; Happek, Uwe; Aesram, Danny; Deshpande, Anirudha

    2012-07-30

    The objective of this program is to develop phosphor systems and LED light engines that have steady-state LED efficacies (using LEDs with a 60% wall-plug efficiency) of 105–120 lm/W with correlated color temperatures (CCT) ~3000 K, color rendering indices (CRI) >85, <0.003 distance from the blackbody curve (dbb), and <2% loss in phosphor efficiency under high temperature, high humidity conditions. In order to reach these goals, this involves the composition and processing optimization of phosphors previously developed by GE in combination with light engine package modification.

  4. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  5. Tips: Lighting | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Tips: Lighting Tips: Lighting Lighting choices save you money. Energy-efficient light bulbs are available in a wide variety of sizes and shapes. Lighting choices save you money....

  6. Direct Detection of sub-GeV Dark Matter with Semiconductor Targets

    E-Print Network [OSTI]

    Rouven Essig; Marivi Fernandez-Serra; Jeremy Mardon; Adrian Soto; Tomer Volansky; Tien-Tien Yu

    2015-09-04

    Dark matter in the sub-GeV mass range is a theoretically motivated but largely unexplored paradigm. Such light masses are out of reach for conventional nuclear recoil direct detection experiments, but may be detected through the small ionization signals caused by dark matter-electron scattering. Semiconductors are well-studied and are particularly promising target materials because their ${\\cal O}(1~\\rm{eV})$ band gaps allow for ionization signals from dark matter as light as a few hundred keV. Current direct detection technologies are being adapted for dark matter-electron scattering. In this paper, we provide the theoretical calculations for dark matter-electron scattering rate in semiconductors, overcoming several complications that stem from the many-body nature of the problem. We use density functional theory to numerically calculate the rates for dark matter-electron scattering in silicon and germanium, and estimate the sensitivity for upcoming experiments such as DAMIC and SuperCDMS. We find that the reach for these upcoming experiments has the potential to be orders of magnitude beyond current direct detection constraints and that sub-GeV dark matter has a sizable modulation signal. We also give the first direct detection limits on sub-GeV dark matter from its scattering off electrons in a semiconductor target (silicon) based on published results from DAMIC. We make available publicly our code, QEdark, with which we calculate our results. Our results can be used by experimental collaborations to calculate their own sensitivities based on their specific setup. The searches we propose will probe vast new regions of unexplored dark matter model and parameter space.

  7. Shell model description of Ge isotopes

    E-Print Network [OSTI]

    J. G. Hirsch; P. C. Srivastava

    2012-04-12

    A shell model study of the low energy region of the spectra in Ge isotopes for $38\\leq N\\leq 50$ is presented, analyzing the excitation energies, quadrupole moments, $B(E2)$ values and occupation numbers. The theoretical results have been compared with the available experimental data. The shell model calculations have been performed employing three different effective interactions and valence spaces.We have used two effective shell model interactions, JUN45 and jj44b, for the valence space $f_{5/2} \\, p \\,g_{9/2}$ without truncation. To include the proton subshell $f_{7/2}$ in valence space we have employed the $fpg$ effective interaction due to Sorlin {\\it et al.}, with $^{48}$Ca as a core and a truncation in the number of excited particles.

  8. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  9. Nucleon Resonances Near 2 GeV

    E-Print Network [OSTI]

    He, Jun

    2015-01-01

    The nucleon resonances near 2 GeV are investigated through the $\\Sigma$(1385) and $\\Lambda(1520)$ photoproductions within a Regge-plus-resonance approach based on the new experimental data released by the CLAS Collaboration. The $\\Delta(2000)$ and the $N(2120)$ are found essential to reproduce the experimental data and should be assigned as second $[\\Delta 5/2^+]$ and third $[N3/2^-]$ in the constituent quark model, respectively. A calculation of the binding energy and decay pattern supports that the $N(1875)$, which is listed in the PDG as the third $N3/2^-$ nucleon resonance instead of the $N(2120)$, is from the $\\Sigma(1385)K$ interaction rather than a three quark state.

  10. Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 Si0.75Ge0.25 using various H2 pressures

    E-Print Network [OSTI]

    Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 ÕSi0.75Ge0.25 using various H2 pressures Gianni Taraschi,a) Sajan Saini, Wendy W. Fan, Lionel C Ge in SiO2 was synthesized by the reduction of Si0.75Ge0.25O2 with H2 , at various annealing

  11. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  12. Ge#ng Started on HokieSpeed

    E-Print Network [OSTI]

    Crawford, T. Daniel

    Ge#ng Started on HokieSpeed Advanced Research Computing #12;Advanced Research Compu:ng;Advanced Research Compu:ng Important Login Informa:on · Account sheets provide login Compu:ng Ge#ng Started Steps 1. Sheet distributed provides your training account

  13. Deficiencies of Lighting Codes and Ordinances in Controlling Light Pollution from Parking Lot Lighting Installations

    E-Print Network [OSTI]

    Royal, Emily

    2012-05-31

    The purpose of this research was to identify the main causes of light pollution from parking lot electric lighting installations and highlight the deficiencies of lighting ordinances in preventing light pollution. Using an industry-accepted lighting...

  14. OpenGL Lighting 13. OpenGL Lighting

    E-Print Network [OSTI]

    McDowell, Perry

    OpenGL Lighting 13. OpenGL Lighting · Overview of Lighting in OpenGL In order for lighting to have an effect in OpenGL, two things are required: A light An object to be lit Lights can be set to any color determine how they reflect the light which hits them. The color(s) of an object is determined

  15. Centrality dependence of the thermal excitation-energy deposition in 8-15 GeV/c hadron-Au reactions

    E-Print Network [OSTI]

    R. A. Soltz; R. J. Newby; J. L. Klay; M. Heffner; L. Beaulieu; T. Lefort; K. Kwiatkowski; V. E. Viola

    2009-01-09

    The excitation energy per residue nucleon (E*/A) and fast and thermal light particle multiplicities are studied as a function of centrality defined as the number of grey tracks emitted N_grey and by the mean number of primary hadron-nucleon scatterings and mean impact parameter extracted from it. The value of E*/A and the multiplicities show an increase with centrality for all systems, 14.6 GeV p-Au and 8.0 GeV pi-Au and pbar-Au collisions, and the excitation energy per residue nucleon exhibits a uniform dependence on N_grey.

  16. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect (OSTI)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Süess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6?ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3?ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  17. The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer et al.

    E-Print Network [OSTI]

    Hague, Jim

    The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli,1 L. Ferre Llin,1 S. Cecchi,2 J June 2013) The thermoelectric and physical properties of superlattices consisting of modulation doped

  18. CONNECTED LIGHTING SYSTEMS MEETING

    Office of Energy Efficiency and Renewable Energy (EERE)

    There is a lot of buzz today about the Internet of Things and the convergence of intelligent controllable light sources, communication networks, sensors, and data exchange in future lighting...

  19. Kyler Nelson Light Timer

    E-Print Network [OSTI]

    Kachroo, Pushkin

    designated by the user, the Arduino board will dim the light to save energy. The user designates the time instance, the light is dimmed using pulse width modulation (PWM) in the Arduino's pin number 11

  20. Automatic lighting controls demonstration

    SciTech Connect (OSTI)

    Rubinstein, F.; Verderber, R.

    1990-03-01

    The purpose of this work was to demonstrate, in a real building situation, the energy and peak demand reduction capabilities of an electronically ballasted lighting control system that can utilize all types of control strategies to efficiently manage lighting. The project has demonstrated that a state-of-the-art electronically ballasted dimmable lighting system can reduce energy and lighting demand by as least 50% using various combinations of control strategies. By reducing light levels over circulation areas (tuning) and reducing after hours light levels to accommodate the less stringent lighting demands of the cleaning crew (scheduling), lighting energy consumption on weekdays was reduced an average of 54% relative to the initial condition. 10 refs., 14 figs., 3 tabs.

  1. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

    SciTech Connect (OSTI)

    Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

    2013-09-14

    Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

  2. Lighting and Daylight Harvesting 

    E-Print Network [OSTI]

    Bos, J.

    2011-01-01

    in 1992 to serve the lighting design needs of the architectural and interior design communities. With over fifty years of combined experience, our areas of expertise range from architectural and theatrical lighting to custom fixture design. Bos... Lighting Design We are active members of the International Association of Lighting Designers, the American Institute of Architects, the Illuminating Engineering Society, International Dark Skies Association and the United States Green Building Council...

  3. LED Lighting Retrofit 

    E-Print Network [OSTI]

    Shaw-Meadow, N.

    2011-01-01

    kWh is the one that never gets used? ?Dedicated to making environmentally responsible products? Ringdale Introduction LED Roadway Lighting Better Light, Fewer Watts. Period. Nathan Shaw-Meadow LED Lighting Specialist Ringdale ActiveLED ESL.../exponential efficiency growth often deters investment today 7 Challenges to Implementation ESL-KT-11-11-57 CATEE 2011, Dallas, Texas, Nov. 7 ? 9, 2011 ? Municipal Street Light Case Study 8 ? Replaced 400W High Pressure Sodium fixtures with 52W Active...

  4. Ge-on-Si light-emitting materials and devices for silicon photonics

    E-Print Network [OSTI]

    Sun, Xiaochen

    2009-01-01

    The rapid growing needs for high data transmission bandwidth challenge the metal interconnection technology in every area from chip-level interconnects to long distance communication. Silicon photonics is an ideal platform ...

  5. Why Is the Speed of Light in Meters Per Second What It Is? | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservationBio-Inspired SolarAbout /Two0Photos andSeminarsDesign » Design for EfficiencyWhy

  6. TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergyPlan | Department ofSUPPLEMENTSwitzerland|ofSessions |2Energy 71 - In3 -4

  7. TEE-0077 - In the Matter of GE Appliances & Lighting | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergyPlan | Department ofSUPPLEMENTSwitzerland|ofSessions |2Energy 71 - In37 -

  8. Ratio of jet cross sections at root s=630 GeV and 1800 GeV

    E-Print Network [OSTI]

    Baringer, Philip S.; Bean, Alice; Coppage, Don; Hebert, C.

    2001-03-01

    The DO Collaboration has measured the inclusive jet cross section in (p) over barp collisions at roots = 630 GeV. The results for pseudorapidities \\ eta \\ < 0.5 are combined with our previous results at roots = 1800 GeV ...

  9. Light emitting device comprising phosphorescent materials for white light generation

    DOE Patents [OSTI]

    Thompson, Mark E.; Dapkus, P. Daniel

    2014-07-22

    The present invention relates to phosphors for energy downconversion of high energy light to generate a broadband light spectrum, which emit light of different emission wavelengths.

  10. And the Oscar for Sustainable Mobile Lighting Goes to.... Lighting...

    Energy Savers [EERE]

    And the Oscar for Sustainable Mobile Lighting Goes to.... Lighting Up Operations with Hydrogen and Fuel Cell Technology And the Oscar for Sustainable Mobile Lighting Goes to.......

  11. Ion Implanted Ge:B Far Infrard Blocked Impurity Band Detectors

    E-Print Network [OSTI]

    Beeman, J.W.; Goyal, S.; Reichertz, L.A.; Haller, E.E.

    2008-01-01

    +16 1.E+15 1.E+14 Depth into Ge Crystal Surface (Å) Figure 5devices does not match that of Ge:Ga photoconductors, whichimplants or stacking devices) Ge IBIB detectors will reach

  12. ALFVEN-WAVE OSCILLATIONS IN A SPHERE, WITH APPLICATIONS TO ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Markiewicz, R.S.

    2011-01-01

    Rev. B 13,4626 (1976). For Ge(4:2) m is the average of thediscussed for EHD in unstressed Ge (B II )TO ELECI'RON-OOLE DROPS IN Ge R. S. Markiewicz January 1978

  13. NUCLEATION PHENOMENA IN THE FORMATION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2010-01-01

    lO cjl(K) Symbol erg cm ) Ge - 0.064 T2 Ref. x x Si Ref. T2constructed the ultra-sensitive Ge photodetector which wasand method of mounting. The Ge sample is electrically and

  14. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byBerkeley, CA, 94720 ABSTRACT Ge nanocrystals are formed inthe Raman spectra of the Ge nanocrystals in-situ. The

  15. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01

    segregation in Mn-doped Ge”, Journal of Applied Physics 101,Room-temperature ferromagnetism in Ge 1-x Mn x nanowires”,BC high-?/metal gate Ge/C alloy pMOSFETs fabricated directly

  16. Phenomenology of Light Gauginos

    E-Print Network [OSTI]

    Glennys R. Farrar

    1995-04-13

    I advocate the virtues of a very economical version of the minimal supersymmetric standard model which avoids cosmological problems often encountered in dynamical SUSY-breaking and solves the SUSY-CP problem. Imposing $m_Z=91$ GeV and $m_t \\sim 175$ GeV implies that scalar masses are generally $100-200$ GeV. The gluino and photino are massless at tree level. At 1-loop, the gluino mass is predicted to be in the range $m_{\\gluino}: 100 - 600$ MeV and the photino mass can be estimated to be $m_{\\photino}: 100 - 1400$ MeV. New hadrons with mass $\\sim 1 \\frac{1}{2}$ GeV are predicted and described. The ``extra'' flavor singlet pseudoscalar observed in two experiments in the $\\iota(1440)$ region, if confirmed, is naturally interpreted as the state which gets its mass via the QCD anomaly. Its superpartner, a gluon-gluino bound state, generally has a lifetime longer than $5~10^{-11}$ sec and would not have shown up in existing searches. Search strategies and other consequences of the scenario are discussed.

  17. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

    SciTech Connect (OSTI)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

    2013-12-04

    The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

  18. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?°C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  19. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  20. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  1. Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen* and D. K. Saldin

    E-Print Network [OSTI]

    Saldin, Dilano

    Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen quantitatively the geometry of mixed Ge-Si dimers on a single domain Si 001 2 1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si 001 at 0.1 ML

  2. Lighting Design | Department of Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Design Lighting Design Energy-efficient indoor and outdoor lighting design focuses on ways to improve both the quality and efficiency of lighting. | Photo courtesy of...

  3. Light extraction from organic light-emitting diodes for lighting applications by sand-blasting

    E-Print Network [OSTI]

    Light extraction from organic light-emitting diodes for lighting applications by sand@ust.hk Abstract: Light extraction from organic light-emitting diodes (OLEDs) by scattering the light is one of the effective methods for large-area lighting applications. In this paper, we present a very simple and cost

  4. Induction Lighting: An Old Lighting Technology Made New Again

    Broader source: Energy.gov [DOE]

    Induction lighting is one of the best kept secrets in energy-efficient lighting. Simply stated, induction lighting is essentially a fluorescent light without electrodes or filaments, the items that...

  5. GeV Emission from Collisional Magnetized Gamma Ray Bursts

    E-Print Network [OSTI]

    P. Mészáros; M. J. Rees

    2011-04-26

    Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

  6. Multi-GeV neutrinos due to neutro anti-neutron oscillation in Gamma-Ray Burst Fireballs

    E-Print Network [OSTI]

    Sarira Sahu

    2007-02-27

    The long and short gamma-ray bursts are believed to be produced due to collapse of massive stars and merger of compact binaries respectively. All these objects are rich in neutron and the jet outflow from these objects must have a neutron component in it. By postulating the neutron anti-neutron oscillation in the gamma-ray burst fireball, we show that, 19-38 GeV neutrinos and anti-neutrinos can be produced due to annihilation of anti-neutrons with the background neutrons. These neutrinos and anti-neutrinos will be produced before the 5-10 GeV neutrinos due to dynamical decoupling of neutrons from the rest of the fireball. Observation of these neutrinos will shed more light on the nature of the GRB progenitors and also be a unique signature of physics beyond the standard model. A possible way of detecting these neutrinos in future is also discussed.

  7. Lighting the Night: Technology, Urban Life and the Evolution of Street Lighting [Light in Place

    E-Print Network [OSTI]

    Holden, Alfred

    1992-01-01

    Electrical 16. "Highway Lighting by So­ dium Vapor Lamps,"Possibilities of Street: Lighting Improve­ ments," TheLaunches Broad Street Lighting Promotion Campaign," The

  8. ECE 466: LED Lighting Systems -Incandescent lightings rise and

    E-Print Network [OSTI]

    Connors, Daniel A.

    ECE 466: LED Lighting Systems - Incandescent lightings rise and demise via government policy - Alternative Fluorescent light sources and compact fluorescent lights (CFL) to incandescents - Alternative LED light sources - Color index as well as Watts to Lumens efficiency available from all three light sources

  9. Lighting and Surfaces 11.1 Introduction to Lighting

    E-Print Network [OSTI]

    Boyd, John P.

    Chapter 11 Lighting and Surfaces 11.1 Introduction to Lighting Three-dimensional surfaces can react to light, and how computer graphics simulates this. There are three species of light (or "illumination models"): 1. Intrinsic (self-emitting) 2. Ambient light (sometimes called "diffuse light") 3

  10. Dynamical model for light composite fermions

    SciTech Connect (OSTI)

    Derman, E.

    1981-04-01

    A simple dynamical model for the internal structure of the three light lepton and quark generations (..nu../sub e/,e,u,d), (..nu../sub ..mu../,..mu..,c,s), and (..nu../sub tau/,tau,t,b) is proposed. Each generation is constructed of only one fundamental massive generation F=(L-italic/sup 0/,L/sup -/,U,D) with the same (SU/sub 3/)/sub c/ x SU/sub 2/ x U/sub 1/ quantum numbers as the light generations, bound to a core of one or more massive Higgs bosons H, where H is the single physical Higgs boson necessary for spontaneous symmetry breaking in the standard model. For example, e/sup -/=L/sup -/H), ..mu../sup -/=L/sup -/HH), tau/sup -/=L/sup -/HHH). It is shown that the known binding force due to H exchange is attractive and strong enough to produce light bound states. Dynamical calculations for the bound-state composite fermions using the Bethe-Salpeter equation, together with some phenomenological imput, suggest M/sub H/approx.16 TeV and M/sub F/approx.100 GeV. It is likely that such bound states can have properties compatible with the up to now apparently elementary appearance of known fermions, for example, their Dirac magnetic moments and absence of intergeneration radiative decays (such as ..mu -->..e..gamma..). Phenomenological consequences and tests of the model are discussed.

  11. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)aboutRio deCooperation atThe GE

  12. Sandia Energy - Light Creation Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Light Creation Materials Home Energy Research EFRCs Solid-State Lighting Science EFRC Overview Light Creation Materials Light Creation MaterialsAlyssa Christy2015-03-26T16:28:52+00...

  13. Arnold Schwarzenegger LIGHTING RESEARCH PROGRAM

    E-Print Network [OSTI]

    Project Summaries ELEMENT 2: ADVANCE LIGHTING TECHNOLOGIES PROJECT 2.1 LIGHT EMITTING DIODE (LED light emitting diodes (LED) technology for general lighting applications by developing a task lamp

  14. Greatly improved interfacial passivation of in-situ high ? dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    SciTech Connect (OSTI)

    Chu, R. L. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2014-05-19

    A high-quality high-?/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high ? dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5?Å to 1?Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high ? dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-?/Ge interface using the Ge epi-layer approach.

  15. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

    SciTech Connect (OSTI)

    Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-02-25

    The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

  16. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect (OSTI)

    Prestat, E., E-mail: eric.prestat@gmail.com; Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A., E-mail: andre.barski@cea.com [INAC, SP2M, CEA and Université Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  17. Light-shining-through-walls with lasers

    E-Print Network [OSTI]

    Friederike Januschek

    2014-10-07

    Light-shining-through-walls experiments are the search experiments for weakly interacting slim particles (WISPs) with the smallest model dependence. They have the advantage that not only the detection, but also the production of the WISPs takes place in the laboratory and can thus be controlled. Using lasers is the preferred option for most of the mass region and has led to the world's most stringent laboratory limits (ALPS I) there. At CERN, OSQAR promises to surpass these and at DESY ALPS II is currently set up, which is planning to probe the axion-like particle to photon coupling down to $|g_{a\\gamma}|\\gtrsim 2\\cdot10^{-11}$ GeV$^{-1}$, which is in a region favored by many astrophysical hints.

  18. Status of the SAGA Light Source

    SciTech Connect (OSTI)

    Kaneyasu, T.; Takabayashi, Y.; Iwasaki, Y.; Koda, S.

    2010-06-23

    The SAGA Light Source (SAGA-LS) is a synchrotron radiation facility consisting of a 255 MeV injector linac and a 1.4 GeV storage ring that is 75.6 m in circumference. The SAGA-LS has been stably providing synchrotron radiation to users since it first started user operation in February 2006. Along with the user operation, various machine improvements have been made over the past years, including upgrading the injector linac control system, replacing a septum magnet and constructing a beam diagnostic system. In addition to these improvements, insertion devices have been developed and installed. An APPLE-II type variable polarization undulator was installed in 2008. To address the demand from users for high-flux hard x-rays, a superconducting 4 T class wiggler is being developed. An experimental setup for generating MeV photons by laser Compton scattering is being constructed for beam monitoring and future user experiments.

  19. Light quark masses using domain wall fermions

    E-Print Network [OSTI]

    Tom Blum; Amarjit Soni; Matthew Wingate

    1998-09-10

    We compute the one-loop self-energy correction to the massive domain wall quark propagator. Combining this calculation with simulations at several gauge couplings, we estimate the strange quark mass in the continuum limit. The perturbative one-loop mass renormalization is comparable to that for Wilson quarks and considerably smaller than that for Kogut-Susskind quarks. Also, scaling violations appear mild in comparison to other errors at present. Given their good chiral behavior and these features, domain wall quarks are attractive for evaluating the light quark masses. Our preliminary quenched result is m_s(2 GeV) = 82(15) MeV in the ${\\bar{MS}}$ scheme.

  20. Direct band gap narrowing in highly doped Ge

    E-Print Network [OSTI]

    Han, Zhaohong

    Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration ...

  1. Growth strategies to control tapering in Ge nanowires

    SciTech Connect (OSTI)

    Periwal, P.; Baron, T., E-mail: thierry.baron@cea.fr; Salem, B.; Bassani, F. [Laboratoire des Technologies de la Microelectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Gentile, P. [SiNaPs Laboratory SP2M, UMR-E, CEA/UJF-Grenoble 1, INAC, 38054 Grenoble (France)

    2014-04-01

    We report the effect of PH{sub 3} on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400?°C in the presence of PH{sub 3}, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH{sub 3}/GeH{sub 4} ratio causes passivation at NW surface. At high PH{sub 3} concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH{sub 3} flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH{sub 3}-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  2. Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

    E-Print Network [OSTI]

    Kan, Eric Win Hong

    Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...

  3. Discovery of Isotopes of Elements with Z $\\ge$ 100

    E-Print Network [OSTI]

    M. Thoennessen

    2012-03-09

    Currently, 163 isotopes of elements with Z $\\ge$ 100 have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  4. Ge-on-Si laser operating at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

  5. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new...

  6. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click...

  7. ORNL Partners with GE on New Hybrid | ornl.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save...

  8. Kids Invention: Vision of the Future |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Bring your Child to Work Day, to student mentoring, teaching in the class room, Invention Convention and Science Day. To take the message nationally, GE teamed up with the...

  9. The Need for Biological Computation System Models | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2012.10.09 Hello everyone, I'm Maria Zavodszky and I work in the Computational Biology and Biostatistics Lab at GE Global Research in Niskayuna, New York. This being our...

  10. Demonstration of 2nd Generation Ducted GE "Brillion" Hybrid Water

    E-Print Network [OSTI]

    sharing partners. #12;Project Synopsis Evaluate the performance and demand response (DR) of the Gen II GE/frequency response) in the PNW and nationwide (Lu et al, 2011; Diao et al 2012) The demand response characteristics

  11. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  12. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  13. High efficiency incandescent lighting

    DOE Patents [OSTI]

    Bermel, Peter; Ilic, Ognjen; Chan, Walker R.; Musabeyoglu, Ahmet; Cukierman, Aviv Ruben; Harradon, Michael Robert; Celanovic, Ivan; Soljacic, Marin

    2014-09-02

    Incandescent lighting structure. The structure includes a thermal emitter that can, but does not have to, include a first photonic crystal on its surface to tailor thermal emission coupled to, in a high-view-factor geometry, a second photonic filter selected to reflect infrared radiation back to the emitter while passing visible light. This structure is highly efficient as compared to standard incandescent light bulbs.

  14. National Synchrotron Light Source

    ScienceCinema (OSTI)

    BNL

    2009-09-01

    A tour of Brookhaven's National Synchrotron Light Source (NSLS), hosted by Associate Laboratory Director for Light Sources, Stephen Dierker. The NSLS is one of the world's most widely used scientific research facilities, hosting more than 2,500 guest researchers each year. The NSLS provides intense beams of infrared, ultraviolet, and x-ray light for basic and applied research in physics, chemistry, medicine, geophysics, environmental, and materials sciences.

  15. First Beam Measurements with the LHC Synchrotron Light Monitors

    SciTech Connect (OSTI)

    Lefevre, Thibaut; Bravin, Enrico; Burtin, Gerard; Guerrero, Ana; Jeff, Adam; Rabiller, Aurelie; Roncarolo, Federico; Fisher, Alan; /SLAC

    2012-07-13

    The continuous monitoring of the transverse sizes of the beams in the Large Hadron Collider (LHC) relies on the use of synchrotron radiation and intensified video cameras. Depending on the beam energy, different synchrotron light sources must be used. A dedicated superconducting undulator has been built for low beam energies (450 GeV to 1.5 TeV), while edge and centre radiation from a beam-separation dipole magnet are used respectively for intermediate and high energies (up to 7 TeV). The emitted visible photons are collected using a retractable mirror, which sends the light into an optical system adapted for acquisition using intensified CCD cameras. This paper presents the design of the imaging system, and compares the expected light intensity with measurements and the calculated spatial resolution with a cross calibration performed with the wire scanners. Upgrades and future plans are also discussed.

  16. Faster Than Light?

    E-Print Network [OSTI]

    Robert Geroch

    2010-05-10

    It is argued that special relativity remains a viable physical theory even when there is permitted signals traveling faster than light.

  17. Comparing Light Bulbs

    Office of Energy Efficiency and Renewable Energy (EERE)

    In this exercise, students will use a light to demonstrate the difference between being energy-efficient and energy-wasteful, and learn what energy efficiency means.

  18. Lighting in Commercial Buildings

    U.S. Energy Information Administration (EIA) Indexed Site

    Illuminance Assignments for CBECS Building Activity Categories Illuminance ranges were adopted from the 1987 Illuminating Engineering Society (IES) Lighting Handbook. The IES...

  19. Lighting in Commercial Buildings

    U.S. Energy Information Administration (EIA) Indexed Site

    from the engineering literature, based on CBECS building activity.) 4. Efficacy: an energy efficiency measure. Technically, the amount of light produced per unit of energy...

  20. Lighting in Commercial Buildings

    U.S. Energy Information Administration (EIA) Indexed Site

    (CEC), March 1990. Advanced Lighting Technologies Application Guidelines (ALTAG), Building and Appliance Efficiency Office. 3. Dubin, F.S., Mindell, H.L., and Bloome, S., 1976....

  1. Lighting in Commercial Buildings

    U.S. Energy Information Administration (EIA) Indexed Site

    energy are presented in this section. Statistics are presented by subgroups based on building characteristics, and by subgroups based on lighting equipment. The three sets of...

  2. Medical Imaging Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING Release date: Todd A.FebruaryMaking

  3. Edmund G. Brown Jr. LIGHTING CALIFORNIA'S FUTURE

    E-Print Network [OSTI]

    Edmund G. Brown Jr. Governor LIGHTING CALIFORNIA'S FUTURE: SMART LIGHT-EMITTING DIODE LIGHTING's Future: Smart LightEmitting Diode Lighting in Residential Fans. California Energy Commission, PIER

  4. Study of plutonium disposition using the GE Advanced Boiling Water Reactor (ABWR)

    SciTech Connect (OSTI)

    1994-04-30

    The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the U.S. to disposition 50 to 100 metric tons of excess of plutonium in parallel with a similar program in Russia. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing long-term diversion resistance to this material. The NAS study {open_quotes}Management and Disposition of Excess Weapons Plutonium{close_quotes} identified light water reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a U.S. disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a 1350 MWe GE Advanced Boiling Water Reactor (ABWR) is utilized to convert the plutonium to spent fuel. The ABWR represents the integration of over 30 years of experience gained worldwide in the design, construction and operation of BWRs. It incorporates advanced features to enhance reliability and safety, minimize waste and reduce worker exposure. For example, the core is never uncovered nor is any operator action required for 72 hours after any design basis accident. Phase 1 of this study was documented in a GE report dated May 13, 1993. DOE`s Phase 1 evaluations cited the ABWR as a proven technical approach for the disposition of plutonium. This Phase 2 study addresses specific areas which the DOE authorized as appropriate for more in-depth evaluations. A separate report addresses the findings relative to the use of existing BWRs to achieve the same goal.

  5. Azimuthal correlations of transverse energy for Pb on Pb at 158 GeV/nucleon

    SciTech Connect (OSTI)

    Wienold, T. [Lawrence Berkeley National Lab., CA (United States); Huang, I. [California Univ., Davis, CA (United States); The NA49 Collaboration

    1996-02-03

    Azimuthal correlations have been studied in heavy ion reactions over a wide range of beam energies. At low incident energies up to 100 MeV/nucleon where collective effects like the directed sidewards flow are generally small, azimuthal correlations provide a useful tool to determine the reaction plane event by event. In the energy regime of the BEVALAC (up to 1 GeV/nucleon for heavy ions) particular emission patterns, i.e. azimuthal correlations of nucleons and light nuclei with respect to the reaction plane, have been associated with the so called squeeze out and sidesplash effects. These effects are of particular interest because of their sensitivity to the equation of state at the high baryon density which is build up during the collision process. Angular distributions similar to the squeeze out have been observed for pions at the SIS in Darmstadt as well as from the EOS - collaboration. Recently also the sideward flow was measured for pions and kaons. However, the origin of the signal in the case of produced mesons is thought to be of a different nature than that for the nucleon flow. At the AGS, azimuthally anisotropic event shapes have been reported from the E877 collaboration for the highest available heavy ion beam energy (11.4 GeV/nucleon). Using a Fourier analysis of the transverse energy distribution measured in calorimeters, it was concluded that sideward flow is still of significant magnitude. Here we will report a first analysis of azimuthal correlations found in the transverse energy distribution from Pb on Pb collisions at the CERN SPS (158 GeV/nucleon).

  6. Members of a workshop at the tenth IAYC Conference, July 7, 2006 1. ge -hak -te le -ber, ge -fil -te -fish: sha-bes iz a far -ge -ni -gn

    E-Print Network [OSTI]

    Finkel, Raphael

    A SUDE Members of a workshop at the tenth IAYC Conference, July 7, 2006 = 90 4 4 1. ge - hak - te le - ber, ge - fil - te - fish: sha- bes iz a far - ge - ni - gn 2. kha - le gri - vn, ku - gl yoykh: ku - men on di ma - khe - to - nem. 3. shtru - dl, tsi - mes, zi - se kalte: a su - de vos men vet ge

  7. GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change Pathway Today's Date to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours OR ____ I am a Pathway student, and I would like

  8. College of Engineering Partner Schools Australia Melbourne University, Melbourne GE3*

    E-Print Network [OSTI]

    Lee, Tonghun

    College of Engineering Partner Schools Australia Melbourne University, Melbourne ­ GE3* University of New South Wales, New South Wales ­ GE3* Austria Technical University of Vienna, Vienna - GE3* Chile Universidad del Bio Bio, Concepcion China Xiamen University, Xiamen ­ GE3* Denmark Aalborg University, Aalborg

  9. On the Comparison of Fisher Information of the Weibull and GE Distributions

    E-Print Network [OSTI]

    Kundu, Debasis

    On the Comparison of Fisher Information of the Weibull and GE Distributions Rameshwar D. Gupta exponen- tial (GE) and Weibull distributions for complete and Type-I censored observations. Fisher is much more than the GE distribution. We compute the total information of the Weibull and GE

  10. GE Hosts Visit by DOE to Kick Off High-Efficiency GeneratorDevelopment Program

    E-Print Network [OSTI]

    history of working with the DOE on critical energy programs. Jon Ebacher, Vice President of GE PowerGE Hosts Visit by DOE to Kick Off High-Efficiency GeneratorDevelopment Program Technology Expected of Energy (DOE) recently met with representatives of GE Power Systems and the GE Global Research Center

  11. Spectral analysis of Fermi-LAT blazars above 50 GeV

    E-Print Network [OSTI]

    Domínguez, Alberto

    2015-01-01

    We present an analysis of the intrinsic (unattenuated by the extragalactic background light, EBL) power-law spectral indices of 128 extragalactic sources detected up to z~2 with the Fermi-Large Area Telescope (LAT) at very high energies (VHEs, E>50 GeV). The median of the intrinsic index distribution is 2.20 (versus 2.54 for the observed distribution). We also analyze the observed spectral breaks (i.e., the difference between the VHE and high energy, HE, 100 MeVGeV, spectral indices). The LAT has now provided a large sample of sources detected both at VHE and HE with comparable exposure that allows us to test models of extragalactic gamma-ray photon propagation. We find that our data are compatible with simulations that include intrinsic blazar curvature and EBL attenuation. There is also no evidence of evolution with redshift of the physics that drives the photon emission in high-frequency synchrotron peak (HSP) blazars. This makes HSP blazars excellent probes of the EBL.

  12. Right-handed neutrino production rate at T > 160 GeV

    SciTech Connect (OSTI)

    Ghisoiu, I.; Laine, M. E-mail: laine@itp.unibe.ch

    2014-12-01

    The production rate of right-handed neutrinos from a Standard Model plasma at a temperature above a hundred GeV has previously been evaluated up to NLO in Standard Model couplings (g ? 2/3) in relativistic (M ? ?T) and non-relativistic regimes (M >> ?T), and up to LO in an ultrarelativistic regime (M ?< gT). The last result necessitates an all-orders resummation of the loop expansion, accounting for multiple soft scatterings of the nearly light-like particles participating in 1 ? 2 reactions. In this paper we suggest how the regimes can be interpolated into a result applicable for any right-handed neutrino mass and at all temperatures above 160GeV. The results can also be used for determining the lepton number washout rate in models containing right-handed neutrinos. Numerical results are given in a tabulated form permitting for their incorporation into leptogenesis codes. We note that due to effects from soft Higgs bosons there is a narrow intermediate regime around (M ? g{sup 1/2}T in which our interpolation is phenomenological and a more precise study would be welcome.

  13. Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects

    E-Print Network [OSTI]

    Chen, Haydn H.

    Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects X. L. Wua. A new orange-green PL band, centered at 2.25 eV, was observed with full-width at half-maximum of 0.1 e coated, the new PL band remains unchanged in peak energy but drops abruptly in intensity. Spectral

  14. Explosively pumped laser light

    DOE Patents [OSTI]

    Piltch, Martin S. (Los Alamos, NM); Michelotti, Roy A. (Los Alamos, NM)

    1991-01-01

    A single shot laser pumped by detonation of an explosive in a shell casing. The shock wave from detonation of the explosive causes a rare gas to luminesce. The high intensity light from the gas enters a lasing medium, which thereafter outputs a pulse of laser light to disable optical sensors and personnel.

  15. Light intensity compressor

    DOE Patents [OSTI]

    Rushford, Michael C. (Livermore, CA)

    1990-01-01

    In a system for recording images having vastly differing light intensities over the face of the image, a light intensity compressor is provided that utilizes the properties of twisted nematic liquid crystals to compress the image intensity. A photoconductor or photodiode material that is responsive to the wavelength of radiation being recorded is placed adjacent a layer of twisted nematic liquid crystal material. An electric potential applied to a pair of electrodes that are disposed outside of the liquid crystal/photoconductor arrangement to provide an electric field in the vicinity of the liquid crystal material. The electrodes are substantially transparent to the form of radiation being recorded. A pair of crossed polarizers are provided on opposite sides of the liquid crystal. The front polarizer linearly polarizes the light, while the back polarizer cooperates with the front polarizer and the liquid crystal material to compress the intensity of a viewed scene. Light incident upon the intensity compressor activates the photoconductor in proportion to the intensity of the light, thereby varying the field applied to the liquid crystal. The increased field causes the liquid crystal to have less of a twisting effect on the incident linearly polarized light, which will cause an increased percentage of the light to be absorbed by the back polarizer. The intensity of an image may be compressed by forming an image on the light intensity compressor.

  16. Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)

    SciTech Connect (OSTI)

    Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

    2013-09-30

    We investigate the growth of self-assembled Ge nanostructures on top of embedded Ge nanowires on Si(001) substrates. Ge nanostructures, such as nanodashes, nanodumbbells, and dot chains are observed simply by tuning the growth temperature and thickness of the Si spacer between the Ge layers. The self-assembly process is governed by the surface strain fields generated by the embedded Ge nanowires and is well-described by our theoretical calculations. The catalyst-free and horizontal growth of such Ge nanostructures directly on Si(001) is attractive for investigating exotic transport properties through Si/Ge-based quantum devices.

  17. Production and Testing Experience with the SRF Cavities for the CEBAF 12 GeV Upgrade

    SciTech Connect (OSTI)

    A. Burrill, G.K. Davis, F. Marhauser, C.E. Reece, A.V. Reilly, M. Stirbet

    2011-09-01

    The CEBAF recirculating CW electron linear accelerator at Jefferson Lab is presently undergoing a major upgrade to 12 GeV. This project includes the fabrication, preparation, and testing of 80 new 7-cell SRF cavities, followed by their incorporation into ten new cryomodules for subsequent testing and installation. In order to maximize the cavity Q over the full operable dynamic range in CEBAF (as high as 25 MV/m), the decision was taken to apply a streamlined preparation process that includes a final light temperature-controlled electropolish of the rf surface over the vendor-provided bulk BCP etch. Cavity processing work began at JLab in September 2010 and will continue through December 2011. The excellent performance results are exceeding project requirements and indicate a fabrication and preparation process that is stable and well controlled. The cavity production and performance experience to date will be summarized and lessons learned reported to the community.

  18. Absolute Drell-Yan Dimuon Cross Sections in 800 GeV/c pp and pd Collisions

    E-Print Network [OSTI]

    FNAL E866/NuSea Collaboration; :; J. C. Webb; T. C. Awes; M. L. Brooks; C. N. Brown; J. D. Bush; T. A. Carey; T. H. Chang; W. E. Cooper; C. A. Gagliardi; G. T. Garvey; D. F. Geesaman; E. A. Hawker; X. C. He; L. D. Isenhower; D. M. Kaplan; S. B. Kaufman; D. D. Koetke; D. M. Lee; W. M. Lee; M. J. Leitch; N. Makins; P. L. McGaughey; J. M. Moss; B. A. Mueller; P. M. Nord; V. Papavassiliou; B. K. Park; J. C. Peng; G. Petitt; P. E. Reimer; M. E. Sadler; W. E. Sondheim; P. W. Stankus; T. N. Thompson; R. S. Towell; R. E. Tribble; M. A. Vasiliev; J. L. Willis; D. K. Wise; G. R. Young

    2003-02-14

    The Fermilab E866/NuSea Collaboration has measured the Drell-Yan dimuon cross sections in 800 GeV/$c$ $pp$ and $pd$ collisions. This represents the first measurement of the Drell-Yan cross section in $pp$ collisions over a broad kinematic region and the most extensive study to date of the Drell-Yan cross section in $pd$ collisions. The results indicate that recent global parton distribution fits provide a good description of the light antiquark sea in the nucleon over the Bjorken-$x$ range $0.03 \\lesssim x < 0.15$, but overestimate the valence quark distributions as $x \\to 1$.

  19. Lighting affects appearance LightSource emits photons

    E-Print Network [OSTI]

    Jacobs, David

    1 Lighting affects appearance #12;2 LightSource emits photons Photons travel in a straight line). And then some reach the eye/camera. #12;3 Reflectance Model how objects reflect light. Model light sources Algorithms for computing Shading: computing intensities within polygons Determine what light strikes what

  20. VIRTUAL LIGHT: DIGITALLY-GENERATED LIGHTING FOR VIDEO CONFERENCING APPLICATIONS

    E-Print Network [OSTI]

    Greenberg, Albert

    VIRTUAL LIGHT: DIGITALLY-GENERATED LIGHTING FOR VIDEO CONFERENCING APPLICATIONS Andrea Basso method to improve the lighting conditions of a real scene or video sequence. In particular we concentrate on modifying real light sources intensities and inserting virtual lights into a real scene viewed from a fixed

  1. LightBox -Exploring Interaction Modalities with Colored Light

    E-Print Network [OSTI]

    of light to very subtle animations, transitions and dimmed lighting effects. Implementation LightBox is housed in an aluminum suitcase measuring 48x38x25cm. The lid of the suitcase contains a panel of 12x12 Design. Figure 1. An animated lighting sequence visualized on the hi-power LEDs of LightBox #12

  2. Indoor positioning algorithm using light-emitting diode visible light

    E-Print Network [OSTI]

    Kavehrad, Mohsen

    Indoor positioning algorithm using light- emitting diode visible light communications Zhou Zhou of Use: http://spiedl.org/terms #12;Indoor positioning algorithm using light-emitting diode visible light. This paper proposes a novel indoor positioning algorithm using visible light communications (VLC

  3. TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

    E-Print Network [OSTI]

    Chew, Han Guan

    Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO?) system have been studied based on the Ge content of co-sputtered Ge-SiO? films using transmission electron microscopy (TEM) and X-ray ...

  4. White light velocity interferometer

    DOE Patents [OSTI]

    Erskine, D.J.

    1999-06-08

    The invention is a technique that allows the use of broadband and incoherent illumination. Although denoted white light velocimetry, this principle can be applied to any wave phenomenon. For the first time, powerful, compact or inexpensive sources can be used for remote target velocimetry. These include flash and arc lamps, light from detonations, pulsed lasers, chirped frequency lasers, and lasers operating simultaneously in several wavelengths. The technique is demonstrated with white light from an incandescent source to measure a target moving at 16 m/s. 41 figs.

  5. Green Light Pulse Oximeter

    DOE Patents [OSTI]

    Scharf, John Edward (Oldsmar, FL)

    1998-11-03

    A reflectance pulse oximeter that determines oxygen saturation of hemoglobin using two sources of electromagnetic radiation in the green optical region, which provides the maximum reflectance pulsation spectrum. The use of green light allows placement of an oximetry probe at central body sites (e.g., wrist, thigh, abdomen, forehead, scalp, and back). Preferably, the two green light sources alternately emit light at 560 nm and 577 nm, respectively, which gives the biggest difference in hemoglobin extinction coefficients between deoxyhemoglobin, RHb, and oxyhemoglobin, HbO.sub.2.

  6. Lakeview Light and Power- Commercial Lighting Rebate Program

    Broader source: Energy.gov [DOE]

    Lakeview Light and Power offers a commercial lighting rebate program. Rebates apply to the installation of energy efficient lighting retrofits in non-residential buildings. The rebate program is...

  7. Demonstration Assessment of Light-Emitting Diode (LED) Roadway Lighting

    SciTech Connect (OSTI)

    None

    2009-11-01

    A U.S. Department of Energy Solid-State Lighting Gateway Report on a Demonstration Assessment of Light-Emitting Diode (LED) Roadway Lighting in Lija Loop, Portland, Oregon.

  8. The Majorana Demonstrator: Progress towards showing the feasibility of a 76Ge neutrinoless double-beta decay experiment

    SciTech Connect (OSTI)

    Finnerty, P.; Aguayo, Estanislao; Amman, M.; Avignone, Frank T.; Barabash, Alexander S.; Barton, P. J.; Beene, Jim; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Doe, P. J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, S. R.; Esterline, James H.; Fast, James E.; Fields, N.; Fraenkle, Florian; Galindo-Uribarri, A.; Gehman, Victor M.; Giovanetti, G. K.; Green, M.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, M. A.; Johnson, R. A.; Keeter, K.; Kidd, M. F.; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; Leon, Jonathan D.; Leviner, L.; Loach, J. C.; Looker, Q.; Luke, P.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Perumpilly, Gopakumar; Phillips, David; Poon, Alan; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Schubert, Alexis G.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Steele, David; Strain, J.; Timkin, V.; Tornow, Werner; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Yakushev, E.; Yaver, Harold; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir

    2014-03-24

    The Majorana Demonstrator will search for the neutrinoless double-beta decay (0*) of the 76Ge isotope with a mixed array of enriched and natural germanium detectors. The observation of this rare decay would indicate the neutrino is its own anti-particle, demonstrate that lepton number is not conserved, and provide information on the absolute mass-scale of the neutrino. The Demonstrator is being assembled at the 4850 foot level of the Sanford Underground Research Facility in Lead, South Dakota. The array will be contained in a lowbackground environment and surrounded by passive and active shielding. The goals for the Demonstrator are: demonstrating a background rate less than 3 counts tonne -1 year-1 in the 4 keV region of interest (ROI) surrounding the 2039 keV 76Ge endpoint energy; establishing the technology required to build a tonne-scale germanium based double-beta decay experiment; testing the recent claim of observation of 0; and performing a direct search for lightWIMPs (3-10 GeV/c2).

  9. Columbia Water & Light- HVAC and Lighting Efficiency Rebates

    Broader source: Energy.gov [DOE]

    Columbia Water & Light (CWL) offers rebates to its commercial and industrial customers for the purchase of high efficiency HVAC installations and efficient lighting. Incentives for certain...

  10. Peninsula Light Company- Commercial Efficient Lighting Rebate Program

    Broader source: Energy.gov [DOE]

    Peninsula Light Company (PLC) offers a rebate program for commercial customers who wish to upgrade to energy efficient lighting. Participating customers must be served by PLC commercial service....

  11. Light Vector Mesons

    E-Print Network [OSTI]

    Alexander Milov

    2008-12-21

    This article reviews the current status of experimental results obtained in the measurement of light vector mesons produced in proton-proton and heavy ion collisions at different energies. The review is focused on two phenomena related to the light vector mesons; the modification of the spectral shape in search of Chiral symmetry restoration and suppression of the meson production in heavy ion collisions. The experimental results show that the spectral shape of light vector mesons are modified compared to the parameters measured in vacuum. The nature and the magnitude of the modification depends on the energy density of the media in which they are produced. The suppression patterns of light vector mesons are different from the measurements of other mesons and baryons. The mechanisms responsible for the suppression of the mesons are not yet understood. Systematic comparison of existing experimental results points to the missing data which may help to resolve the problem.

  12. lighting in the library

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    lamp produces about 1750 lumens. Footcandle: a lumen of light distributed over a 1-square-foot (0.09-square-meter) area. Ideal Illumination: the minimum number of footcandles...

  13. Solid State Lighting Reliability

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solid State Lighting Reliability 2015Building Technologies Office Peer Review Lynn Davis, PhD RTI International ldavis@rti.org --- 919-316-3325 Project Summary Timeline: Start...

  14. The Facts of Light

    E-Print Network [OSTI]

    Horn, Berthold K.P.

    This is a random collection of facts about radiant and luminous energy. Some of this information may be useful in the design of photo-diode image sensors, in the set-up of lighting for television microscopes and the ...

  15. National Synchrotron Light Source

    ScienceCinema (OSTI)

    None

    2010-01-08

    A tour of Brookhaven's National Synchrotron Light Source (NSLS). The NSLS is one of the world's most widely used scientific research facilities, hosting more than 2,500 guest researchers each year. The NSLS provides intense beams of infrared, ultraviole

  16. Lighting in Commercial Buildings

    U.S. Energy Information Administration (EIA) Indexed Site

    5.2 152.6 160.5 54.6 Assembly Health Care Lodging Office 0 20 40 60 80 100 120 140 160 180 Energy Information Administration Energy Consumption Series: Lighting in Commercial...

  17. Solid state lighting component

    DOE Patents [OSTI]

    Yuan, Thomas; Keller, Bernd; Ibbetson, James; Tarsa, Eric; Negley, Gerald

    2010-10-26

    An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.

  18. Solid state lighting component

    DOE Patents [OSTI]

    Keller, Bernd; Ibbetson, James; Tarsa, Eric; Negley, Gerald; Yuan, Thomas

    2012-07-10

    An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.

  19. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  20. Light and Plants Plants use light to photosynthesize. Name two places that light can come from

    E-Print Network [OSTI]

    Koptur, Suzanne

    Light and Plants Plants use light to photosynthesize. Name two places that light can come from: 1 (CO2, a gas) from the air and turn it into SUGARS (food). This process is powered by energy from light plants) for energy. Photosynthetically Active Radiation (PAR) is a combination of red light and blue

  1. LED Lighting | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    focusing light in ways that are useful in homes and commercial settings. The light-emitting diode (LED) is one of today's most energy-efficient and rapidly-developing lighting...

  2. Energy Conservation in Industrial Lighting 

    E-Print Network [OSTI]

    Meharg, E.

    1979-01-01

    were identified. Savings in power and cost were quantified for typical examples as follows: Task lighting, high light source efficacy, high luminaire mounting height, efficient luminaires, surroundings painted a light color, regular luminaire cleaning...

  3. Higher order light propagation volumes

    E-Print Network [OSTI]

    Martin, Timothy Ly; Martin, Timothy Ly

    2012-01-01

    1.1 Introduction . . . . . . . . . 1.2 Light Propagation4.1.1 Injection of Virtual Point Lights and Geometryof the Stanford bunny, lit by an area light, rendered using

  4. Light as a Healing Mechanism

    E-Print Network [OSTI]

    Lingampalli, Nithya

    2013-01-01

    S. (1991). Meridians conduct light. Moskow: Raum and Zeit.the bod’ys absorption of light. Explore, 9(2), doi: https://01). The healing use of light and color. Health Care Design

  5. Lighting and the Bottom Line 

    E-Print Network [OSTI]

    Christensen, M.

    1981-01-01

    A discussion of the cost of light and how it relates to the cost of people. The new Illuminating Engineering Society recommended method of determining lighting levels will be explained. Also several ways of providing good lighting to increase...

  6. Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

    SciTech Connect (OSTI)

    Gunasekera, K.; Boolchand, P. [School of Electronics and Computing Systems, College of Engineering and Applied Science, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Micoulaut, M., E-mail: mmi@lptl.jussieu.fr [Laboratoire de Physique Théorique de la Matière Condensée, Université Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France)

    2014-04-28

    Amorphous Ge{sub x}Si{sub x}Te{sub 1?2x} glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions x{sub c1}=7.5% and Ge, Si) are increased. The structural manifestation of these anomalies is understood from ?{sup 119}Sn Mössbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge{sub 20}Te{sub 80}, Si{sub 20}Te{sub 80}, and Ge{sub 10}Si{sub 10}Te{sub 80}). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp{sup 3} geometry, whereas Mössbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x??8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

  7. C incorporation in epitaxial Ge1yCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D'Arcy-Gall, and J. E. Greene

    E-Print Network [OSTI]

    Gall, Daniel

    C incorporation in epitaxial Ge1ÀyCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D lattice site configurations in fully coherent Ge1 yCy layers grown on Ge 001 . Calculations using strained configuration involving only one C atom per configura- tion. The bond-centered interstitial and the Ge-C split

  8. New Light Sources for Tomorrow's Lighting Designs 

    E-Print Network [OSTI]

    Krailo, D. A.

    1986-01-01

    and lighting systems. Table 2 shows the development of four-foot energy-saving retrofit lamps. By utilizing new cathode designed and different gas fills, 34-watt energy-saving lamps were developed that operate on existing rapid start ballasts and afford... of fluorescent lamps, two watts of system power are consumed in heating the lamp cath odes. The shedding of cathode heating wattage was the next lamp efficiency improvement to be introduced. One available sy tern dis connects the lamp cathodes from...

  9. MCNP6 simulation of light and medium nuclei fragmentation at intermediate energies

    E-Print Network [OSTI]

    Stepan G. Mashnik; Leslie M. Kerby

    2015-08-24

    Fragmentation reactions induced on light and medium nuclei by protons and light nuclei of energies around 1 GeV/nucleon and below are studied with the Los Alamos transport code MCNP6 and with its CEM03.03 and LAQGSM03.03 event generators. CEM and LAQGSM assume that intermediate-energy fragmentation reactions on light nuclei occur generally in two stages. The first stage is the intranuclear cascade (INC), followed by the second, Fermi breakup disintegration of light excited residual nuclei produced after the INC. CEM and LAQGSM account also for coalescence of light fragments (complex particles) up to 4He from energetic nucleons emitted during INC. We investigate the validity and performance of MCNP6, CEM, and LAQGSM in simulating fragmentation reactions at intermediate energies and discuss possible ways of further improving these codes

  10. MCNP6 simulation of light and medium nuclei fragmentation at intermediate energies

    E-Print Network [OSTI]

    Mashnik, Stepan G

    2015-01-01

    Fragmentation reactions induced on light and medium nuclei by protons and light nuclei of energies around 1 GeV/nucleon and below are studied with the Los Alamos transport code MCNP6 and with its CEM03.03 and LAQGSM03.03 event generators. CEM and LAQGSM assume that intermediate-energy fragmentation reactions on light nuclei occur generally in two stages. The first stage is the intranuclear cascade (INC), followed by the second, Fermi breakup disintegration of light excited residual nuclei produced after the INC. CEM and LAQGSM account also for coalescence of light fragments (complex particles) up to 4He from energetic nucleons emitted during INC. We investigate the validity and performance of MCNP6, CEM, and LAQGSM in simulating fragmentation reactions at intermediate energies and discuss possible ways of further improving these codes

  11. Field-induced quantum criticality in YbAgGe

    SciTech Connect (OSTI)

    Bud'ko, S.; Canfield, P.

    2008-01-01

    YbAgGe is one of the very few stoichiometric, Yb-based, heavy fermion materials that exhibit field-induced quantum criticality. We will present an overview of thermodynamic and transport measurements in YbAgGe single crystals. Moderate magnetic field (45-90 kOe, depending on orientation) suppresses long range magnetic order, giving rise to non-Fermi-liquid behavior followed at higher field by a crossover to a heavy Fermi-liquid. Given the more accessible temperature and field scales, a non-Fermi liquid region rather than point for T {yields} 0 K may be detected.

  12. Lighting Design | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    as part of your whole-house design -- an approach for building an energy-efficient home. Indoor Lighting Design When designing indoor lighting for energy efficiency,...

  13. GATEWAY Demonstrations: LED Street Lighting

    SciTech Connect (OSTI)

    Cook, Tyson; Shackelford, Jordan; Pang, Terrance Pang

    2008-12-01

    This report summarizes an assessment project conducted to study the performance of light emitting diode (LED) luminaires in a street lighting application in San Francisco, CA.

  14. Interior Lighting Efficiency for Municipalities

    Broader source: Energy.gov [DOE]

    This webinar covered a basic understanding of lighting, different types of lamps and luminaries, importance of energy efficiency in lighting, and knowledge of where to find financial resources.

  15. 2010 US Lighting Market Characterization

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2010 U.S. Lighting Market Characterization January 2012 Prepared for: Solid-State Lighting Program Building Technologies Program Office of Energy Efficiency and Renewable Energy...

  16. Lighting Controls | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    fluorescent lighting fixtures rather than replace them. Dimmers and LEDs Some light-emitting diode (LED) lightbulbs can be used with dimmers. LED bulbs and fixtures must be...

  17. Direct band gap optical emission from Ge islands grown on relaxed Si{sub 0.5}Ge{sub 0.5}/Si (100) substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2014-01-07

    Strained Ge islands have been grown on fully relaxed Si{sub 0.5}Ge{sub 0.5} substrate by pulsed laser ablation technique. The formation of strained Ge islands has been found for film with higher thickness following Stranski–Krastanov growth mechanism. The variation of strain with changing Ge layer thickness has been analyzed using Raman spectroscopy and high-resolution X-ray diffraction techniques. X-ray photoelectron spectra have shown the absence of any Si-Ge intermixing and oxidation of Ge films. A strong no-phonon photoluminescence emission from Ge islands has been observed, showing the superior optical characteristics of the islands grown on relaxed substrate.

  18. Light-Ion-Induced Multifragmentation: The ISiS Project

    E-Print Network [OSTI]

    V. E. Viola

    2006-04-20

    An extensive study of GeV light-ion-induced multifragmentation and its possible interpretation in terms of a nuclear liquid-gas phase transition has been performed with the Indiana Silicon Sphere (ISiS)4 pi detector array. Measurements were performed with 5-15 GeV/c p, pbar, and pion beams incident on $^{197}$Au and 2-5 GeV $^3$He incident on $^{nat}$Ag and $^{197}$Au targets. Both the reaction dynamics and the subsequent decay of the heavy residues have been explored. The data provide evidence for a dramatic change in the reaction observables near an excitation energy of E*/A = 4-5 MeV per residue nucleon. In this region, fragment multiplicities and energy spectra indicate emission from an expanded/dilute source on a very short time scale (20-50 fm/c). These properties, along with caloric curve and scaling-law behavior, yield a pattern that is consistent with a nuclear liquid-gas phase transition.

  19. Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS

    E-Print Network [OSTI]

    Fei, Ruixiang; Li, Ju; Yang, Li

    2015-01-01

    We predict enormous piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their characteristic piezoelectric coefficients are about two orders of magnitude larger than those of other 2D materials, such as MoS2 and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique "puckered" D2h symmetry and weaker chemical bonds of monolayer group IV monochalcogenides. Given the achieved experimental advances in fabrication of monolayers, their flexible character and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications, such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  20. (Sr,Ba)(Si,Ge){sub 2} for thin-film solar-cell applications: First-principles study

    SciTech Connect (OSTI)

    Kumar, Mukesh E-mail: mkgarg79@gmail.com; Umezawa, Naoto; Imai, Motoharu

    2014-05-28

    In order to meet the increasing demand for electric power generation from solar energy conversion, the development of efficient light absorber materials has been awaited. To this end, the electronic and optical properties of advanced alkaline-earth-metals disilicides and digermanides (SrSi{sub 2}, BaSi{sub 2}, SrGe{sub 2}, and BaGe{sub 2}) are studied by means of the density functional theory using HSE06 exchange-correlation energy functional. Our calculations show that all these orthorhombic structured compounds have fundamental indirect band gaps in the range E{sub g} ? 0.89–1.25 eV, which is suitable for solar cell applications. The estimated lattice parameters and band gaps are in good agreement with experiments. Our calculations show that the electronic band structures of all four compounds are very similar except in the vicinity of the ?-point. The valence band of these compounds is made up by Si(Ge)-p states, whereas the conduction band is composed of Sr(Ba)-d states. Their band alignments are carefully determined by estimating the work function of each compound using slab model. The optical properties are discussed in terms of the complex dielectric function ?(?)?=??{sub 1}(?)?+?i?{sub 2}(?). The static and high-frequency dielectric constants are calculated, taking into account the ionic contribution. The absorption coefficient ?(?) demonstrates that a low energy dispersion of the conduction band, which results in a flat conduction band minimum, leads to large optical activity in these compounds. Therefore, alkaline-earth-metals disilicides and digermanides possess great potential as light absorbers for applications in thin-film solar cell technologies.

  1. INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS

    E-Print Network [OSTI]

    INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS SRIKANTH B and Engineering, University of California, Los Angeles, CA 90095. ABSTRACT Relaxed graded Si-Ge/Si layers can of these applications requires a different final Ge concentration in the graded Si-Ge layer. With increasing Ge content

  2. GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change ­ General English of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take ______________________________________________ Date _________________ #12;GE & AE Extension Request Form, Version 11, Feb 2013, JC Please submit

  3. Lighting affects appearance LightSource emits photons

    E-Print Network [OSTI]

    Jacobs, David

    1 Lighting affects appearance #12;2 LightSource emits photons Photons travel in a straight line). And then some reach the eye/camera. #12;3 Basic fact: Light is linear Double intensity of sources, double photons reaching eye. Turn on two lights, and photons reaching eye are same as sum of number when each

  4. Quasi light fields: extending the light field to coherent radiation

    E-Print Network [OSTI]

    Wornell, Gregory W.

    Quasi light fields: extending the light field to coherent radiation Anthony Accardi1,2 and Gregory light field, and for coherent radiation using electromagnetic field theory. We present a model of coherent image formation that strikes a balance between the utility of the light field

  5. Interior Light Level Measurements Appendix F -Interior Light Level Measurements

    E-Print Network [OSTI]

    Appendix F ­ Interior Light Level Measurements #12;F.1 Appendix F - Interior Light Level. A potential concern is that a lower VT glazing may increase electric lighting use to compensate for lost qualify and quantify a representative loss of daylighting, and therefore electric lighting use

  6. Demonstration Assessment of LED Roadway Lighting: Philadelphia...

    Office of Scientific and Technical Information (OSTI)

    LED Roadway Lighting: Philadelphia, PA Royer, Michael P.; Tuenge, Jason R.; Poplawski, Michael E. Roadway Lighting; Solid-state lighting; LED lighting; SSL; LED; GATEWAY Roadway...

  7. Lighting Principles and Terms | Department of Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Principles and Terms Lighting Principles and Terms Light quantity, energy consumption, and light quality are the basic principles of lighting. | Photo courtesy of

  8. Testimonials - Partnerships in LED Lighting - Philips Lumileds...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    LED Lighting - Philips Lumileds Lighting, LLC Testimonials - Partnerships in LED Lighting - Philips Lumileds Lighting, LLC Addthis An error occurred. Try watching this video on...

  9. Light Quark Mass Reweighting

    E-Print Network [OSTI]

    Qi Liu; Norman H. Christ; Chulwoo Jung

    2012-06-01

    We present a systematic study of the effectiveness of light quark mass reweighting. This method allows a single lattice QCD ensemble, generated with a specific value of the dynamical light quark mass, to be used to determine results for other, nearby light dynamical quark masses. We study two gauge field ensembles generated with 2+1 flavors of dynamical domain wall fermions with light quark masses m_l=0.02 (m_\\pi=620 MeV) and m_l=0.01 (m_\\pi=420 MeV). We reweight each ensemble to determine results which could be computed directly from the other and check the consistency of the reweighted results with the direct results. The large difference between the 0.02 and 0.01 light quark masses suggests that this is an aggressive application of reweighting as can be seen from fluctuations in the magnitude of the reweighting factor by four orders of magnitude. Never-the-less, a comparison of the reweighed topological charge, average plaquette, residual mass, pion mass, pion decay constant, and scalar correlator between these two ensembles shows agreement well described by the statistical errors. The issues of the effective number of configurations and finite sample size bias are discussed. An examination of the topological charge distribution implies that it is more favorable to reweight from heavier mass to lighter quark mass.

  10. The Development of the Linac Coherent Light Source RF Gun

    E-Print Network [OSTI]

    Dowell, David H; Lewandowski, James; Limborg-Deprey, Cecile; Li, Zenghai; Schmerge, John; Vlieks, Arnold; Wang, Juwen; Xiao, Liling

    2015-01-01

    The Linac Coherent Light Source (LCLS) is the first x-ray laser user facility based upon a free electron laser (FEL). In addition to many other stringent requirements, the LCLS XFEL requires extraordinary beam quality to saturate at 1.5 angstroms within a 100 meter undulator.[1] This new light source is using the last kilometer of the three kilometer linac at SLAC to accelerate the beam to an energy as high as 13.6 GeV and required a new electron gun and injector to produce a very bright beam for acceleration. At the outset of the project it was recognized that existing RF guns had the potential to produce the desired beam but none had demonstrated it. This paper describes the analysis and design improvements of the BNL/SLAC/UCLA s-band gun leading to achievement of the LCLS performance goals.

  11. The Past and Future of Light Dark Matter Direct Detection

    E-Print Network [OSTI]

    Jonathan H. Davis

    2015-06-12

    We review the status and future of direct searches for light dark matter. We start by answering the question: `Whatever happened to the light dark matter anomalies?' i.e. the fate of the potential dark matter signals observed by the CoGeNT, CRESST-II, CDMS-Si and DAMA/LIBRA experiments. We discuss how the excess events in the first two of these experiments have been explained by previously underestimated backgrounds. For DAMA we summarise the progress and future of mundane explanations for the annual modulation reported in its event rate. Concerning the future of direct detection we focus on the irreducible background from solar neutrinos. We explain broadly how it will affect future searches and summarise efforts to mitigate its effects.

  12. Tropical cyclone energy dispersion under vertical shears Xuyang Ge,1

    E-Print Network [OSTI]

    Li, Tim

    Tropical cyclone energy dispersion under vertical shears Xuyang Ge,1 Tim Li,1,2 and Xiaqiong Zhou1] Tropical cyclone Rossby wave energy dispersion under easterly and westerly vertical shears is investigated, and X. Zhou (2007), Tropical cyclone energy dispersion under vertical shears, Geophys. Res. Lett., 34, L

  13. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  14. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  15. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  16. Are Light Gluinos Dead?

    E-Print Network [OSTI]

    Glennys R. Farrar

    1997-07-25

    Not yet. ALEPH's recent exclusion limit employs an aggressive determination of theoretical uncertainties using a simplified application of the Bayesian method. The validity of their analysis can be evaluated by its further implications, such as contradicting the existence a b quark and requiring relations between hadronic event-shape observables which are not observed. Traditional error estimation methods result in a much larger estimate for the theoretical uncertainties. This puts the ALEPH and also Csikor-Fodor limits at the $\\sim 1~ \\sigma$ level for the very light gluino scenario. A recent astrophysical result implies direct searches will be more difficult than previously anticipated, adding to the importance of reducing the QCD uncertainty in predictions sensitive to indirect effects of light gluinos. Some possible indications in favor of a light gluino are noted.

  17. Light harvesting arrays

    DOE Patents [OSTI]

    Lindsey, Jonathan S. (Raleigh, NC)

    2002-01-01

    A light harvesting array useful for the manufacture of devices such as solar cells comprises: (a) a first substrate comprising a first electrode; and (b) a layer of light harvesting rods electrically coupled to the first electrode, each of the light harvesting rods comprising a polymer of Formula I: X.sup.1.paren open-st.X.sup.m+1).sub.m (I) wherein m is at least 1, and may be from two, three or four to 20 or more; X.sup.1 is a charge separation group (and preferably a porphyrinic macrocycle, which may be one ligand of a double-decker sandwich compound) having an excited-state of energy equal to or lower than that of X.sup.2, and X.sup.2 through X.sup.m+1 are chromophores (and again are preferably porphyrinic macrocycles).

  18. Pupillary efficient lighting system

    DOE Patents [OSTI]

    Berman, Samuel M. (San Francisco, CA); Jewett, Don L. (Mill Valley, CA)

    1991-01-01

    A lighting system having at least two independent lighting subsystems each with a different ratio of scotopic illumination to photopic illumination. The radiant energy in the visible region of the spectrum of the lighting subsystems can be adjusted relative to each other so that the total scotopic illumination of the combined system and the total photopic illumination of the combined system can be varied independently. The dilation or contraction of the pupil of an eye is controlled by the level of scotopic illumination and because the scotopic and photopic illumination can be separately controlled, the system allows the pupil size to be varied independently of the level of photopic illumination. Hence, the vision process can be improved for a given level of photopic illumination.

  19. Light emitting ceramic device

    DOE Patents [OSTI]

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  20. Radioluminescent lighting technology

    SciTech Connect (OSTI)

    Not Available

    1990-01-01

    The glow-in-the-dark stereotype that characterizes the popular image of nuclear materials is not accidental. When the French scientist, Henri Becquerel, first discovered radioactivity in 1896, he was interested in luminescence. Radioluminescence, the production of light from a mixture of energetic and passive materials, is probably the oldest practical application of the unstable nucleus. Tritium-based radioluminescent lighting, in spite of the biologically favorable character of the gaseous tritium isotope, was included in the general tightening of environmental and safety regulations. Tritium light manufacturers would have to meet two fundamental conditions: (1) The benefit clearly outweighed the risk, to the extent that even the perceived risk of a skeptical public would be overcome. (2) The need was significant enough that the customer/user would be willing and able to afford the cost of regulation that was imposed both in the manufacture, use and eventual disposal of nuclear materials. In 1981, researchers at Oak Ridge National Laboratory were investigating larger radioluminescent applications using byproduct nuclear material such as krypton-85, as well as tritium. By 1982, it appeared that large source, (100 Curies or more) tritium gas tube, lights might be useful for marking runways and drop zones for military operations and perhaps even special civilian aviation applications. The successful development of this idea depended on making the light bright enough and demonstrating that large gas tube sources could be used and maintained safely in the environment. This successful DOE program is now in the process of being completed and closed-out. Working closely with the tritium light industry, State governments and other Federal agencies, the basic program goals have been achieved. This is a detailed report of what they have learned, proven, and discovered. 91 refs., 29 figs., 5 tabs. (JF)

  1. Higgs Discovery in the Presence of Light CP-Odd Scalars

    SciTech Connect (OSTI)

    Lisanti, Mariangela; Wacker, Jay G.; /SLAC /Stanford U., Phys. Dept.

    2009-06-19

    Many models of electroweak symmetry breaking have an additional light pseudoscalar. If the Higgs boson can decay to a new pseudoscalar, LEP searches for the Higgs can be significantly altered and the Higgs can be as light as 86 GeV. Discovering the Higgs boson in these models is challenging when the pseudoscalar is lighter than 10 GeV because it decays dominantly into tau leptons. In this paper, we discuss discovering the Higgs in a subdominant decay mode where one of the pseudoscalars decays to a pair of muons. This search allows for potential discovery of a cascade-decaying Higgs boson with the complete Tevatron data set or early data at the LHC.

  2. Light is Heavy

    E-Print Network [OSTI]

    van der Mark, M B

    2015-01-01

    Einstein's relativity theory appears to be very accurate, but at times equally puzzling. On the one hand, electromagnetic radiation must have zero rest mass in order to propagate at the speed of light, but on the other hand, since it definitely carries momentum and energy, it has non-zero inertial mass. Hence, by the principle of equivalence, it must have non-zero gravitational mass, and so, light must be heavy. In this paper, no new results will be derived, but a possibly surprising perspective on the above paradox is given.

  3. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect (OSTI)

    Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  4. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  5. Large inherent optical gain from the direct gap transition of Ge thin films

    E-Print Network [OSTI]

    Wang, Xiaoxin

    The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

  6. GeV electron beams from cm-scale channel guided laser wakefield accelerator

    E-Print Network [OSTI]

    2008-01-01

    GeV electron beams from cm-scale channel guided laser wake?the generation of GeV-class electron beams using an intenseranges and high-quality electron beams with energy up to 1

  7. GeV electron beams from a centimeter-scale laser-driven plasma accelerator

    E-Print Network [OSTI]

    2008-01-01

    GeV electron beams from cm-scale channel guided laser wake?the generation of GeV-class electron beams using an intenseranges and high-quality electron beams with energy up to 1

  8. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in an experimental hall, recording the first data of the 12 GeV era. The machine sent electrons around the racetrack three times (known as "3-pass" beam), resulting in 6.11 GeV...

  9. A new physics era at 12 GeV | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A new physics era at 12 GeV January 29, 2015 In several articles over the past years, we have written of progress with the CEBAF 12 GeV Upgrade Project. Since the beginning of...

  10. Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications

    E-Print Network [OSTI]

    Goh, Johnathan Jian Ming

    2006-01-01

    This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

  11. Discovery of GeV Emission tfrom the Circinus Galaxy with the...

    Office of Scientific and Technical Information (OSTI)

    Discovery of GeV Emission tfrom the Circinus Galaxy with the Fermi-Lat Citation Details In-Document Search Title: Discovery of GeV Emission tfrom the Circinus Galaxy with the...

  12. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process

    E-Print Network [OSTI]

    Lin, Hsin-Chang

    2015-01-01

    1.3 Millimeter-Wave Signal Generation 1.4 ThesisPower Millimeter-Wave Signal Generation in Advanced SiGe andPower Millimeter-Wave Signal Generation in Advanced SiGe and

  13. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  14. Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications

    E-Print Network [OSTI]

    Bai, Yu, Ph.D. Massachusetts Institute of Technology

    2011-01-01

    Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic ...

  15. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Optical Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Citation Details In-Document Search Title: Optical Observations of Gamma-Ray Bursts: Connections to GeVTeV...

  16. GE to Invest in Penn State Center to Study Natural Gas Supply...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    window) GE to Invest in Penn State Center to Study Natural Gas Supply Chains University Park, Pa. - GE announced it will invest up to 10 million in Penn State to establish a new...

  17. LIFETIME AND RADIATIVE EFFICIENCY VS DENSITY IN THE STRAIN-CONFINED ELECTRON-HOLE LIQUID IN Ge

    E-Print Network [OSTI]

    Kelso, Susan M.

    2011-01-01

    electron-hole liquid (SCEHL) in Ge. Sample CR50 was T = 1.9CONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and JohnCONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and John

  18. Ris-M-2737 ' / > ^ ' ' . / , / -THE PHASES OF Pb/Ge(lll)

    E-Print Network [OSTI]

    #12;Risø-M-2737 ' / > ^ ' ' . / , / - THE PHASES OF Pb/Ge(lll): A SURFACE X-RAY DIFFRACTION STUDY of a chemisorbed overlayer of Pb on the Ge(lll) surface. Three phases of Pb/Ge(lll) exist in the monolayer regime: the a- and B-phases with a V3xV3R30° unit cell, and a high-temperature IX1 phase. In the 1X1 phase of Pb/Ge

  19. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    ferromagnetic Mn 5 Ge 3 for spintronic applications. Phys.dopants of interest for spintronic applications, where both

  20. Solid State Lighting

    SciTech Connect (OSTI)

    Hastbacka, Mildred; Dieckmann, John; Bouza, Antonio

    2013-03-30

    The article discusses solid state lighting technologies. This topic was covered in two previous ASHRAE Journal columns (2010). This article covers advancements in technologies and the associated efficacies. The life-cycle, energy savings and market potential of these technologies are addressed as well.

  1. Light-by-light scattering with intact protons at the LHC: from Standard Model to New Physics

    E-Print Network [OSTI]

    Sylvain Fichet; Gero von Gersdorff; Bruno Lenzi; Christophe Royon; Matthias Saimpert

    2015-01-15

    We discuss the discovery potential of light-by-light scattering at the Large Hadron Collider (LHC), induced by the Standard Model (SM) and by new exotic charged particles. Our simulation relies on intact proton detection in the planned forward detectors of CMS and ATLAS. The full four-photon amplitudes generated by any electrically charged particles of spins $1/2$ and $1$, including the SM processes involving loops of leptons, quarks and $W$ bosons are implemented in the Forward Physics Monte Carlo generator. Our method provides model-independent bounds on massive charged particles, only parametrized by the spin, mass and "effective charge" $Q_{\\rm eff}$ of the new particle. We find that a new charged vector (fermion) with $Q_{\\rm eff}=4$ can be discovered up to $m=700~\\rm GeV$ ($m=370~\\rm GeV$) with an integrated luminosity of $300~\\rm fb^{-1}$ at the LHC. We also discuss the sensitivities to neutral particles such as a strongly-interacting heavy dilaton and warped Kaluza-Klein gravitons, whose effects could be discovered for masses in the multi-TeV range.

  2. 2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a

    E-Print Network [OSTI]

    Athens, University of

    2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a , M.A. Savelonas a , D. Maroulis a , M of protein spots in 2D-GE images. The proposed scheme incorporates a protein spot detection stage based both software packages in terms of segmentation performance. Index Terms--2D-GE Images, Protein Spot

  3. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    Mn-Si (red squares) and Mn-Ge distances (blue circles) d asof the number of Si or Ge nearest neighbours N c ; (c) localthree Mn atoms with different N c in a-Mn 0.094 Ge 0.906 .

  4. Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays

    E-Print Network [OSTI]

    Javey, Ali

    Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays Yu-Lun Chueh,,§,|,# Zhiyong, ROC ABSTRACT Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays

  5. Defects in Ge and Si caused by 1 MeV Si+ implantation*

    E-Print Network [OSTI]

    Florida, University of

    Defects in Ge and Si caused by 1 MeV Si+ implantation* D. P. Hickeya Department of Materials defect formation and evolution in the 001 Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no 311 defect

  6. Formation of Ge nanoclusters on Si(1 1 1)-7 7 surface at high temperature

    E-Print Network [OSTI]

    Gao, Hongjun

    Formation of Ge nanoclusters on Si(1 1 1)-7 · 7 surface at high temperature H.M. Guo, Y.L. Wang, H for publication 17 May 2004 Available online 5 June 2004 Abstract We report on Ge nanocluster formation on Si(1 1 of the Ge clusters are more uniform than those obtained at room temperature due to an increase

  7. Transistor-Based Ge/SOI Photodetector for Integrated Silicon Photonics

    E-Print Network [OSTI]

    Luo, Xi

    2011-01-01

    11. Y. -H. Kuo, Y. -K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I.Colace and G. Assanto, “Poly-Ge Near-infrared PhotodetectorsMasini and G. Assanto, “Ge on Si p-i-n photodiodes operating

  8. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping

    E-Print Network [OSTI]

    Rommel, Sean

    Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick and A. Lochtefeld A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2

  9. Materials synthesis and investigation of itinerant ferromagnetism in the UCo?-xFex Ge system

    E-Print Network [OSTI]

    Huang, Kevin

    2009-01-01

    B. UCo 1?x Fe x Ge . . . . . . . . . . . . . 1. Polycrystalvs temperature data of UCo 1?x Fe x Ge from x = 0.0 to x =vs temperature data of UCo 1?x Fe x Ge from x = 0.20 to x =

  10. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Ilmenau (Germany) Abstract. In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface

  11. Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells Q. Mi, X. Xiao report the first room-temperature 1.3 ,um electroluminescence from strained Sir-,Ge,/Si quantum wells to that from the Sit-,GeX wells. A minimum band offset is required to have effective room

  12. GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension General English English (GE) Academic English (AE) 2. Which term will this extension begin? Fall Winter Spring Summer 3 of General English do you wish to request? 1 2 3 4 5 6 (GE sessions are 5 weeks) How many General English

  13. Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si

    E-Print Network [OSTI]

    Rokhinson, Leonid

    Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si L. P and photoluminescence PL spectroscopy of self-assembled Ge dots grown on Si 100 by molecular beam epitaxy. PL spectra show a transition from two- to three-dimensional growth as the Ge thickness exceeds 7 Å. The sum

  14. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R. [JLAB

    2014-02-01

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  15. Atomic and electronic structure of styrene on Ge(100) Do Hwan Kim a

    E-Print Network [OSTI]

    Kim, Sehun

    Atomic and electronic structure of styrene on Ge(100) Do Hwan Kim a , Yun Jeong Hwang b , Junga: Styrene Ge(100) Adsorption DFT calculations STM Coverage-dependent adsorption structures of styrene favorable configuration at room temperature is that the two styrene molecules are bound to two Ge dimers

  16. Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0??? decay searches of 76Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01

    The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of View the MathML source?86%Ge76 and View the MathML source?14%Ge74 used in the 0???0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the View the MathML sourceH3(p,n)He3, View the MathML sourceH2(d,n)He3 and View the MathML sourceH3(d,n)He4 reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium andmore »gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy was used to determine the ?-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the View the MathML sourceGe74(n,?)Ge75 reaction, the present data are about a factor of two larger than predicted. It was found that the View the MathML sourceGe74(n,?)Ge75 yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the View the MathML sourceGe76(n,?)Ge77 yield due to the larger cross section of the former reaction.« less

  17. National Synchrotron Light Source 2008 Activity Report

    SciTech Connect (OSTI)

    Nasta,K.

    2009-05-01

    Funded by the U.S. Department of Energy's Office of Basic Energy Sciences, the National Synchrotron Light Source (NSLS) is a national user facility that operates two electron storage rings: X-Ray (2.8 GeV, 300 mA) and Vacuum Ultraviolet (VUV) (800 mev, 1.0A). These two rings provide intense light spanning the electromagnetic spectrum -- from very long infrared rays to ultraviolet light and super-short x-rays -- to analyze very small or highly dilute samples. The properties of this light, and the specially designed experimental stations, called beamlines, allow scientists in many diverse disciplines of research to perform experiments not possible at their own laboratories. Each year, about 2,200 scientists from more than 400 universities and companies use the NSLS for research in such diverse fields as biology, physics, chemistry, geology, medicine, and environmental and materials sciences. For example, researchers have used the NSLS to examine the minute details of computer chips, decipher the structures of viruses, probe the density of bone, determine the chemical composition of moon rocks, and reveal countless other mysteries of science. The facility has 65 operating beamlines, with 51 beamlines on the X-Ray Ring and 14 beamlines on the VUV-Infrared Ring. It runs seven days a week, 24 hours a day throughout the year, except during periods of maintenance and studies. Researchers are not charged for beam time, provided that the research results are published in open literature. Proprietary research is conducted on a full-cost-recovery basis. With close to 1,000 publications per year, the NSLS is one of the most prolific scientific facilities in the world. Among the many accolades given to its users and staff, the NSLS has won nine R&D 100 Awards for innovations ranging from a closed orbit feedback system to the first device able to focus a large spread of high-energy x-rays. In addition, a visiting NSLS researcher shared the 2003 Nobel Prize in Chemistry for work explaining how one class of proteins helps to generate nerve impulses.

  18. Demonstration Assessment of Light-Emitting Diode Roadway Lighting...

    Office of Scientific and Technical Information (OSTI)

    New York Citation Details In-Document Search Title: Demonstration Assessment of Light-Emitting Diode Roadway Lighting on the FDR Drive in New York, New York This a report about a...

  19. Light Dance : light and the nature of body movement

    E-Print Network [OSTI]

    Riskin, Seth

    1989-01-01

    Light Dance is a conscious transfiguration of the body, its movement and the encompassing space; a transposition of matter to light exalted in the dance. This corresponds to the conceptualized spirit of the performer whose ...

  20. Making fuel from light: Argonne research sheds light on photosynthesis...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making fuel from light: Argonne research sheds light on photosynthesis and creation of solar fuel By Jo Napolitano * September 1, 2015 Tweet EmailPrint Refined by nature over a...

  1. GRB 131231A: IMPLICATIONS OF THE GeV EMISSION

    SciTech Connect (OSTI)

    Liu, Bin; Chen, Wei; Liang, Yun-Feng; Zhou, Bei; He, Hao-Ning; Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming [Key laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Tam, Pak-Hin Thomas [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Shao, Lang, E-mail: liangyf@pmo.ac.cn, E-mail: beizhou@pmo.ac.cn, E-mail: yzfan@pmo.ac.cn, E-mail: dmwei@pmo.ac.cn, E-mail: phtam@phys.nthu.edu.tw [Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)

    2014-05-20

    GRB 131231A was detected by the Large Area Telescope on board the Fermi Space Gamma-ray Telescope. The high-energy gamma-ray (>100 MeV) afterglow emission spectrum is F {sub ?}??{sup –0.54} {sup ±} {sup 0.15} in the first ?1300 s after the trigger and the most energetic photon has an energy of ?62 GeV, arriving at t ? 520 s. With reasonable parameters of the gamma-ray burst (GRB) outflow as well as the density of the circum-burst medium, the synchrotron radiation of electrons or protons accelerated at an external forward shock have difficulty accounting for the data. Rather, the synchrotron self-Compton radiation of the forward shock-accelerated electrons can account for both the spectrum and temporal behavior of the GeV afterglow emission. We also show that the prospect for detecting GRB 131231A-like GRBs with the Cherenkov Telescope Array is promising.

  2. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  3. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  4. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    SciTech Connect (OSTI)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325?°C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200??m in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  5. Fusion pumped light source

    DOE Patents [OSTI]

    Pappas, Daniel S. (Los Alamos, NM)

    1989-01-01

    Apparatus is provided for generating energy in the form of light radiation. A fusion reactor is provided for generating a long, or continuous, pulse of high-energy neutrons. The neutron flux is coupled directly with the lasing medium. The lasing medium includes a first component selected from Group O of the periodic table of the elements and having a high inelastic scattering cross section. Gamma radiation from the inelastic scattering reactions interacts with the first component to excite the first component, which decays by photon emission at a first output wavelength. The first output wavelength may be shifted to a second output wavelength using a second liquid component responsive to the first output wavelength. The light outputs may be converted to a coherent laser output by incorporating conventional optics adjacent the laser medium.

  6. Scattering Of Light Nuclei

    SciTech Connect (OSTI)

    Quaglioni, S; Navratil, P; Roth, R

    2009-12-15

    The exact treatment of nuclei starting from the constituent nucleons and the fundamental interactions among them has been a long-standing goal in nuclear physics. Above all nuclear scattering and reactions, which require the solution of the many-body quantum-mechanical problem in the continuum, represent an extraordinary theoretical as well as computational challenge for ab initio approaches.We present a new ab initio many-body approach which derives from the combination of the ab initio no-core shell model with the resonating-group method [4]. By complementing a microscopic cluster technique with the use of realistic interactions, and a microscopic and consistent description of the nucleon clusters, this approach is capable of describing simultaneously both bound and scattering states in light nuclei. We will discuss applications to neutron and proton scattering on sand light p-shell nuclei using realistic nucleon-nucleon potentials, and outline the progress toward the treatment of more complex reactions.

  7. OLEDS FOR GENERAL LIGHTING

    SciTech Connect (OSTI)

    Anil Duggal; Don Foust; Chris Heller; Bill Nealon; Larry Turner; Joe Shiang; Nick Baynes; Tim Butler; Nalin Patel

    2004-02-29

    The goal of this program was to reduce the long term technical risks that were keeping the lighting industry from embracing and developing organic light-emitting diode (OLED) technology for general illumination. The specific goal was to develop OLEDs for lighting to the point where it was possible to demonstrate a large area white light panel with brightness and light quality comparable to a fluorescence source and with an efficacy comparable to that of an incandescent source. it was recognized that achieving this would require significant advances in three area: (1) the improvement of white light quality for illumination, (2) the improvement of OLED energy efficiency at high brightness, and (3) the development of cost-effective large area fabrication techniques. The program was organized such that, each year, a ''deliverable'' device would be fabricated which demonstrated progress in one or more of the three critical research areas. In the first year (2001), effort concentrated on developing an OLED capable of generating high illumination-quality white light. Ultimately, a down-conversion method where a blue OLED was coupled with various down-conversion layers was chosen. Various color and scattering models were developed to aid in material development and device optimization. The first year utilized this approach to deliver a 1 inch x 1 inch OLED with higher illumination-quality than available fluorescent sources. A picture of this device is shown and performance metrics are listed. To their knowledge, this was the first demonstration of true illumination-quality light from an OLED. During the second year, effort concentrated on developing a scalable approach to large area devices. A novel device architecture consisting of dividing the device area into smaller elements that are monolithically connected in series was developed. In the course of this development, it was realized that, in addition to being scalable, this approach made the device tolerant to the most common OLED defect--electrical shorts. This architecture enabled the fabrication of a 6 inch x 6 inch OLED deliverable for 2002. A picture of this deliverable is shown and the performance metrics are listed. At the time, this was the highest efficiency, highest lumen output illumination-quality OLED in existence. The third year effort concentrated on improving the fabrication yield of the 6 inch x 6 inch devices and improving the underlying blue device efficiency. An efficiency breakthrough was achieved through the invention of a new device structure such that now 15 lumen per watt devices could be fabricated. A 2 feet x 2 feet OLED panel consisting of sixteen 6 inch x 6 inch high efficiency devices tiled together was then fabricated. Pictures of this panel are shown with performance metrics listed. This panel met all project objectives and was the final deliverable for the project. It is now the highest efficiency, highest lumen output, illumination-quality OLED in existence.

  8. Solid State Lighting Reliability

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy BillsNo.Hydrogen4EnergySolid State Lighting Reliability 2014 Building

  9. Gamma-Ray Bursts Above 1 GeV

    E-Print Network [OSTI]

    Matthew G. Baring

    1997-11-21

    One of the principal results obtained by the Compton Gamma Ray Observatory relating to the study of gamma-ray bursts was the detection by the EGRET instrument of energetic ($>$100 MeV) photons from a handful of bright bursts. The most extreme of these was the single 18 GeV photon from the GRB940217 source. Given EGRET's sensitivity and limited field of view, the detection rate implies that such high energy emission may be ubiquitous in bursts. Hence expectations that bursts emit out to at least TeV energies are quite realistic, and the associated target-of-opportunity activity of the TeV gamma-ray community is well-founded. This review summarizes the observations and a handful of theoretical models for generating GeV--TeV emission in bursts sources, outlining possible ways that future positive detections could discriminate between different scenarios. The power of observations in the GeV--TeV range to distinguish between spectral structure intrinsic to bursts and that due to the intervening medium between source and observer is also discussed.

  10. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  11. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  12. LED Lighting | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    are directional, focusing light in ways that are useful in homes and commercial settings. The light-emitting diode (LED) is one of today's most energy-efficient and...

  13. An International Year of Light

    E-Print Network [OSTI]

    Faure, Claudie

    of light-based technologies for the equitable development of global society. The project received, renewable energy and energy efficiency, and for PROSPECTUS An International Year of Light Science ­ Technology ­ Nature ­ Culture ­ Development

  14. Photodetector with enhanced light absorption

    DOE Patents [OSTI]

    Kane, James (Lawrenceville, NJ)

    1985-01-01

    A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.

  15. Webinar: Fuel Cell Mobile Lighting

    Broader source: Energy.gov [DOE]

    Video recording of the Fuel Cell Technologies Office webinar, Fuel Cell Mobile Lighting, originally presented on November 13, 2012.

  16. Faster than Light Quantum Communication

    E-Print Network [OSTI]

    A. Y. Shiekh

    2008-04-05

    Faster than light communication might be possible using the collapse of the quantum wave-function without any accompanying paradoxes.

  17. Strained Sistrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor

    E-Print Network [OSTI]

    Strained SiÕstrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility By growing heterostructures that combine a surface strained Si layer with a buried strained Ge layer on Si0.5Ge0.5 , we have fabricated metal-oxide-semiconductor field-effect transistors with mobility

  18. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2}

    SciTech Connect (OSTI)

    Peter, Sebastian C. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Malliakas, Christos D. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Nakotte, Heinze; Kothapilli, Karunakar [Physics Department, New Mexico State University, Las Cruces, NM 88003 (United States); Los Alamos Neutron Science Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, R-5 Shed, Trombay, Mumbai 400085 (India); Schultz, Arthur J. [X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2012-03-15

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Angstrom-Sign , b=10.7447(20) Angstrom-Sign , c=8.4754(17) Angstrom-Sign and {beta}=110.288(30) Degree-Sign (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge){sub n}. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Angstrom-Sign and c=15.1178(19) Angstrom-Sign . The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{proportional_to}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures. - Graphical abstract: The compounds Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are obtained from reactions of Yb and Ge in excess liquid gallium. Highlights: Black-Right-Pointing-Pointer Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are two new polygallides. Black-Right-Pointing-Pointer The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was established using neutron diffraction data. Black-Right-Pointing-Pointer YbGa{sub 4}Ge{sub 2} is one of the rare polar intermetallic compounds. Black-Right-Pointing-Pointer The physical properties of Yb{sub 3}Ga{sub 7}Ge{sub 3} point to a Fermi-liquid regime at low temperature.

  19. Lighting and Dark Sky Regulations

    E-Print Network [OSTI]

    Radcliffe, David

    Lighting and Dark Sky Regulations Marjorie Palmer Spring 2008 #12;The UGA Land Use Clinic provides Road, Room 101 Athens, GA 30602-1510 (706) 583-0373 · Fax (706) 583-0612 jroskie@uga.edu #12;Lighting......................................................................................................................................1 II. Approaches to Lighting Regulation

  20. Radiation, Matter and Energy What is light?

    E-Print Network [OSTI]

    Shirley, Yancy

    Radiation, Matter and Energy #12;What is light? #12;Light is an electromagnetic wave #12;Light is an electromagnetic wave #12;#12;Light is also a particle Photons: "pieces" of light, each with precise wavelength the visible spectrum, blue light has higher energy than red light Within the electromagnetic spectrum, X

  1. Light Board Operation 208 Jordan Hall

    E-Print Network [OSTI]

    Buechler, Steven

    Light Board Operation 208 Jordan Hall Using the Light Board 1. Turn on the lights next to the entry door. 2. Turn on the Light Board lights (illustration 1). The light switch is on the west wall, slightly behind the computer cart's display. 3. Locate the lapel microphone (usually on top of the Light

  2. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe

    E-Print Network [OSTI]

    Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge and computer memory, but the structure of the amorphous phases and the nature of the phase transition of types A Ge and Sb and B Te , an "ABAB square." The rapid amorphous-to-crystalline phase change

  3. Large-angle production of charged pions by 3 GeV/c - 12.9 GeV/c protons on beryllium, aluminium and lead targets

    E-Print Network [OSTI]

    HARP Collaboration

    2007-09-21

    Measurements of the double-differential $\\pi^{\\pm}$ production cross-section in the range of momentum $100 \\MeVc \\leq p beryllium, proton--aluminium and proton--lead collisions are presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12.9 \\GeVc hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was performed using a small-radius cylindrical time projection chamber (TPC) placed inside a solenoidal magnet. Incident particles were identified by an elaborate system of beam detectors. Results are obtained for the double-differential cross-sections at six incident proton beam momenta (3 \\GeVc, 5 \\GeVc, 8 \\GeVc, 8.9 \\GeVc (Be only), 12 \\GeVc and 12.9 \\GeVc (Al only)) and compared to previously available data.

  4. Search for a Light Pseudoscalar Higgs Boson in the Dimuon Decay Channel in pp Collisions at ?s=7??TeV

    E-Print Network [OSTI]

    Bauer, Gerry P.

    The dimuon invariant mass spectrum is searched in the range between 5.5 and 14 GeV for a light pseudoscalar Higgs boson a, predicted in a number of new physics models, including the next-to-minimal supersymmetric standard ...

  5. Smart Spaces Industry/Academia Day | 02.08.2011 | Page 1 Dr. M.A.Stough | Research Solid-State Lighting

    E-Print Network [OSTI]

    Lü, James Jian-Qiang

    InP/GaAs/Ge Triple junction solar cell manufacturer Joint venture with EMCORE on solar business ­ SUNCORE Largest HCPV Solar (1 MW connected to State Grid, October, 2010) INTEREST IN SOLID STATE LIGHTING Company mission ­ LEAD THE CHIPS TO NEW ENERGY Green energy technology utilize SSL Fusion of SSL and Solar

  6. GE & AE Extension Request Form, Version 7, Sept 2012, JC Program Extension General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Sept 2012, JC Program Extension ­ General English) General English (GE) Academic English (AE) Which term will this extension begin? Fall Winter Spring Summer more sessions of GE do you wish to request? 1 2 3 4 5 6 Other ____ (GE sessions are 4 weeks) *Please

  7. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films

    SciTech Connect (OSTI)

    Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

    2014-03-18

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.50–1.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  8. GE & AE Extension Request Form, Version 6, May 2012, JC Program Extension General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 6, May 2012, JC Program Extension ­ General English) General English (GE) Academic English (AE) Which term will this extension begin? Fall Winter Spring Summer more sessions of GE do you wish to request? 1 2 3 4 5 6 Other ____ (GE sessions are 4 weeks) *Please

  9. GE & AE Program Change Request Form, Version 12, July 2013, ML Program Change-General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Program Change Request Form, Version 12, July 2013, ML Program Change-General English English student, and I would like to switch to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours

  10. Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical in an a-Si based multiple- junction solar cell. 1. INTRODUCTION Narrow bandgap amorphous SiGe (a

  11. On photo-expansion and microlens formation in (GeS{sub 2}){sub 0.74}(Sb{sub 2}S{sub 3}){sub 0.26} chalcogenide glass

    SciTech Connect (OSTI)

    Knotek, P.; Tichy, L.

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ? Photo-expansion induced by sub-band-gap photons in GeSbS glass. ? One-step microlens formation. ? The topography of the microlenses detected by AFM and DHM. ? The good mechanical characteristics of the microlenses were obtained. ? Local light-induced overheating of the glass. -- Abstract: Photo-expansion of the bulk of (GeS{sub 2}){sub 0.74}(Sb{sub 2}S{sub 3}){sub 0.26} glass induced by sub-gap photons is studied employing specifically atomic force microscopy (AFM) namely an atomic force acoustic microscopy (AFAM) and a force spectroscopy and digital holographic microscopy. The results are discussed with respect to the possible role of light induced overheating in the process of photo-expansion.

  12. Pedestrian Friendly Outdoor Lighting

    SciTech Connect (OSTI)

    Miller, Naomi J.; Koltai, Rita; McGowan, Terry

    2013-12-31

    This GATEWAY report discusses the problems of pedestrian lighting that occur with all technologies with a focus on the unique optical options and opportunities offered by LEDs through the findings from two pedestrian-focused projects, one at Stanford University in California, and one at the Chautauqua Institution in upstate New York. Incorporating user feedback this report reviews the tradeoffs that must be weighed among visual comfort, color, visibility, efficacy and other factors to stimulate discussion among specifiers, users, energy specialists, and in industry in hopes that new approaches, metrics, and standards can be developed to support pedestrian-focused communities, while reducing energy use.

  13. National Lighting Energy Consumption

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Financing Tool Fits the BillDepartmentSites KDFNational Fuel Cell andEnergy NationalLighting

  14. Extragalactic Background Light

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnical Report:Speeding accessby aLED Street Lighting HostDISCLAIMERlinacSYNCHROTRON

  15. Lighting Market Characterization

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E C H2015 Non-Residential Lighting Market

  16. Lighting Test Facilities

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E C H2015 Non-Residential Lighting

  17. Lighting in the Library

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E C H2015 Non-Residential LightingThe

  18. Overview of Light-Ion Beam Therapy

    SciTech Connect (OSTI)

    Chu, William T.

    2006-03-16

    In 1930, Ernest Orlando Lawrence at the University of California at Berkeley invented the cyclotron. One of his students, M. Stanley Livingston, constructed a 13-cm diameter model that had all the features of early cyclotrons, accelerating protons to 80 keV using less than 1 kV on a semi-circular accelerating electrode, now called the ''dee''. Soon after, Lawrence constructed the first two-dee 27-Inch (69-cm) Cyclotron, which produced protons and deuterons of 4.8 MeV. In 1939, Lawrence constructed the 60-Inch (150-cm) Cyclotron, which accelerated deuterons to 19 MeV. Just before WWII, Lawrence designed a 184-inch cyclotron, but the war prevented the building of this machine. Immediately after the war ended, the Veksler-McMillan principle of phase stability was put forward, which enabled the transformation of conventional cyclotrons to successful synchrocyclotrons. When completed, the 184-Inch Synchrocyclotron produced 340-MeV protons. Following it, more modern synchrocyclotrons were built around the globe, and the synchrocyclotrons in Berkeley and Uppsala, together with the Harvard cyclotron, would perform pioneering work in treatment of human cancer using accelerated hadrons (protons and light ions). When the 184-Inch Synchrocyclotron was built, Lawrence asked Robert Wilson, one of his former graduate students, to look into the shielding requirements for of the new accelerator. Wilson soon realized that the 184-Inch would produce a copious number of protons and other light ions that had enough energy to penetrate human body, and could be used for treatment of deep-seated diseases. Realizing the advantages of delivering a larger dose in the Bragg peak when placed inside deep-seated tumors, he published in a medical journal a seminal paper on the rationale to use accelerated protons and light ions for treatment of human cancer. The precise dose localization provided by protons and light ions means lower doses to normal tissues adjacent to the treatment volume compared to those in conventional (photon) treatments. Wilson wrote his personal account of this pioneering work in 1997. In 1954 Cornelius Tobias and John Lawrence at the Radiation Laboratory (former E.O. Lawrence Berkeley National Laboratory) of the University of California, Berkeley performed the first therapeutic exposure of human patients to hadron (deuteron and helium ion) beams at the 184-Inch Synchrocyclotron. By 1984, or 30 years after the first proton treatment at Berkeley, programs of proton radiation treatments had opened at: University of Uppsala, Sweden, 1957; the Massachusetts General Hospital-Harvard Cyclotron Laboratory (MGH/HCL), USA, 1961; Dubna (1967), Moscow (1969) and St Petersburg (1975) in Russia; Chiba (1979) and Tsukuba (1983) in Japan; and Villigen, Switzerland, 1984. These centers used the accelerators originally constructed for nuclear physics research. The experience at these centers has confirmed the efficacy of protons and light ions in increasing the tumor dose relative to normal tissue dose, with significant improvements in local control and patient survival for several tumor sites. M.R. Raju reviewed the early clinical studies. In 1990, the Loma Linda University Medical Center in California heralded in the age of dedicated medical accelerators when it commissioned its proton therapy facility with a 250-MeV synchrotron. Since then there has been a relatively rapid increase in the number of hospital-based proton treatment centers around the world, and by 2006 there are more than a dozen commercially-built facilities in use, five new facilities under construction, and more in planning stages. In the 1950s larger synchrotrons were built in the GeV region at Brookhaven (3-GeV Cosmotron) and at Berkeley (6-GeV Bevatron), and today most of the world's largest accelerators are synchrotrons. With advances in accelerator design in the early 1970s, synchrotrons at Berkeley and Princeton accelerated ions with atomic numbers between 6 and 18, at energies that permitted the initiation of several biological studies. It is worth noting that when th

  19. Lighting Principles and Terms | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Light quantity, energy consumption, and light quality are the basic principles of lighting. | Photo courtesy of

  20. Embodied Energy and Off-Grid Lighting

    E-Print Network [OSTI]

    Alstone, Peter

    2012-01-01

    Self-reported Impacts of LED Lighting Technology Compared to2011. Adoption of LED Lighting by Night Market Vendors inbased to rechargeable LED lighting. However, as with most

  1. Types of Lighting | Department of Energy

    Energy Savers [EERE]

    For a technical comparison of the different types of lighting, visit Energy Basics. External Resources Find a Lighting Designer - International Association of Lighting...

  2. Demand Responsive Lighting: A Scoping Study

    E-Print Network [OSTI]

    Rubinstein, Francis; Kiliccote, Sila

    2007-01-01

    3 3.0 Previous Experience with Demand Responsive Lighting11 4.3. Prevalence of Lighting13 4.4. Impact of Title 24 on Lighting

  3. Ecological Consequences of Artificial Night Lighting

    E-Print Network [OSTI]

    Piselli, Kathy

    2006-01-01

    of Artificial Night Lighting Catherine Rich and Travisof artificial night lighting. This book provides editedage of modern urban lighting was ushered in. Coincidentally,

  4. LIGHTING CONTROLS: SURVEY OF MARKET POTENTIAL

    E-Print Network [OSTI]

    Verderber, R.R.

    2010-01-01

    REFERENCES Task Report to Lighting Systems Research,Berkeley Laboratory, "Lighting Control System Market1980). Task Report to Lighting Systems Research, Lawrence

  5. LED Outdoor Area Lighting Fact Sheet

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Outdoor Area Lighting LED technology is rapidly becoming competitive with high-intensity discharge light sources for outdoor area lighting. This document reviews the major design...

  6. Controls for Solid-State Lighting

    E-Print Network [OSTI]

    Rubinstein, Francis

    2007-01-01

    of controlling LED lighting using the DALI protocol. Figurewith dimming white LED lighting depending on whether the LEDthe promising hybrid LED lighting systems are: 1. LED Hybrid

  7. Measuring Light Reflectance of BGO Crystal Surfaces

    E-Print Network [OSTI]

    Janecek, Martin

    2009-01-01

    Carlo program simulating light propagation in isotropic orTerms—Lambertian reflection, light collection, Monte Carloy-axis) and fraction specular light (right y- axis) for a

  8. Light propagation and Imaging in Indefinite Metamaterials

    E-Print Network [OSTI]

    Yao, Jie

    2010-01-01

    photolithography by polarized light,” Applied PhysicsZhang, “Imaging visible light using anisotropic metamaterialcross-sectional review of the light propagation of TE mode (

  9. Chemical non-equilibrium and deconfinement in 200 A GeV Sulphur induced reactions

    E-Print Network [OSTI]

    Jean Letessier; Johann Rafelski

    1998-10-06

    We interpret hadronic particle abundances produced in S--Au/W/Pb 200 A GeV reactions in terms of the final state hadronic phase space model and determine by a data fit of the chemical hadron freeze-out parameters. Allowing for the flavor abundance non-equilibrium a highly significant fit to experimental particle abundance data emerges, which supports possibility of strangeness distillation. We find under different strategies stable values for freeze-out temperature T_f=143\\pm3 MeV, baryochemical potential \\mu_B= 173\\pm6 MeV, ratio of strangeness (\\gamma_s) and light quark (\\gamma_q) phase space occupancies \\gamma_s/\\gamma_q=0.60\\pm0.02, and \\gamma_q=1.22\\pm0.05 without accounting for collective expansion (radial flow). When introducing flow effects which allow a consistent description of the transverse mass particle spectra, yielding |v_c|=0.49\\pm0.01c, we find \\gamma_s/\\gamma_q=0.69\\pm0.03, \\gamma_q=1.41\\pm0.08. The strange quark fugacity is fitted at \\lambda_s=1.00\\pm0.02 suggesting chemical freeze-out directly from the deconfined phase.

  10. Characterization of second-phase plates in a Gd5Ge3 intermetallic compound

    SciTech Connect (OSTI)

    Cao, Qing; Chumbley, Leonard S.

    2013-05-16

    Rare-earth compounds based on the stoichiometry R5(SixGe1?x)4 (R = rare-earth elements) exhibit many unusual features, including possessing R5(SixGe1?x)3 thin plates which always precipitate from the matrix despite efforts to suppress their formation. In an effort to better understand the unique relationship between these two intermetallic alloy systems, the bulk microstructure of the compound Gd5Ge3 was examined using scanning (SEM) and transmission electron microscopy (TEM) and optical microscopy. Surprisingly, SEM examination revealed a series of thin plates present in the Gd5Ge3 matrix similar to what is seen in Gd5Ge4. TEM observation revealed that a role reversal had occurred, with the thin plates possessing the orthorhombic structure and composition of Gd5Ge4. The orientation relationship between Gd5Ge4 thin plates and the Gd5Ge3 matrix was determined to be Graphic the same relationship reported for Gd5Ge3 plates precipitating from a Gd5Ge4 matrix. However, by exchanging the respective roles of the phases as regards matrix vs. precipitate, the total number of precipitation variants seen can be increased from two to six. The persistence with which these two intermetallic systems co-exist is truly unique. However, understanding exactly the kinetic and thermodynamic conditions that lead to their unique relationship is hampered by the high formation temperatures at which the observed reaction occurs.

  11. Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers

    SciTech Connect (OSTI)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo; Lei, Xiao-Wu

    2013-10-15

    One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

  12. Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height

    SciTech Connect (OSTI)

    Lin, Guangyang; Tang, Mengrao; Li, Cheng, E-mail: lich@xmu.edu.cn; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)] [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

    2013-12-16

    In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58?eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

  13. Light Stops and Observation of Supersymmetry at LHC RUN-II

    E-Print Network [OSTI]

    Kaufman, Bryan; Nelson, Brent D; Spisak, Andrew

    2015-01-01

    Light stops consistent with the Higgs boson mass of $\\sim126\\,{\\rm GeV}$ are investigated within the framework of minimal supergravity. It is shown that models with light stops which are also consistent with the thermal relic density constraints require stop coannihilation with the neutralino LSP. The analysis shows that the residual set of parameter points with light stops satisfying both the Higgs mass and the relic density constraints lie within a series of thin strips in the $m_0-m_{1/2}$ plane for different values of $A_0/m_0$. Consequently, this region of minimal supergravity parameter space makes a number of very precise predictions. It is found that light stops of mass down to 400~GeV or lower can exist consistent with all constraints. A signal analysis for this class of models at LHC RUN-II is carried out and the dominant signals for their detection identified. Also computed is the minimum integrated luminosity for $5\\sigma$ discovery of the models analyzed. If supersymmetry is realized in this manne...

  14. GE & AE Program Change Form, Version 9, May 2012, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Program Change Form, Version 9, May 2012, JC Program Change ­ General English or Academic to GE. How many more sessions of GE do you wish to request? 1 2 3 4 5 6 How many GE hours do you wish to take? 21 hours 27 hours 2) ____ I am a GE student, and I would like to switch to AE. How many more

  15. Reliable reduction of Fermi-level pinning at atomically matched metal/Ge interfaces by sulfur treatment

    SciTech Connect (OSTI)

    Kasahara, K.; Yamada, S.; Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sakurai, T.; Sawano, K.; Nohira, H. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan); Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)

    2014-04-28

    This study demonstrates that by using a sulfur (S) treatment on the Ge surface, a reduction in Fermi level pinning can reproducibly be achieved at atomically matched metal/Ge(111) interfaces. The Schottky barrier height for p-type Ge can be controlled by changing the metal work function despite the metal/Ge junctions. The results indicate that the combination of atomic-arrangement matching and S treatment can remove extrinsic factors influencing Fermi level pinning at metal/Ge interfaces.

  16. 3 GeV Booster Synchrotron Conceptual Design Report

    SciTech Connect (OSTI)

    Wiedemann, Helmut

    2009-06-02

    Synchrotron light cna be produced from a relativistic particle beam circulating in a storage ring at extremely high intensity and brilliance over a large spectral region reaching from the far infrared regime to hard x-rays. The particles, either electrons or positrons, radiate as they are deflected in the fields of the storage ring bending magnets or of magnets specially optimized for the production of synchrotron light. The synchrotron light being very intense and well collimated in the forward direction has become a major tool in a large variety of research fields in physics, chemistry, material science, biology, and medicine.

  17. Diamond turning of Si and Ge single crystals

    SciTech Connect (OSTI)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  18. Extended Battery Life in Electric Vehicles | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFES OctoberEvan Racah Evan-5 BeamlineGE, Ford, University of

  19. Miniaturized Turbine Offers Desalination Solution | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory ofDid you notHeatMaRIEdioxide capture |GE Puts Desalination "on Ice"

  20. Crystal Lake - GE Energy Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePower VenturesInformation9) Wind Farm Jump to: navigation, search NameGE