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Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Sun Prairie Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Sun Prairie Water & Light Comm Sun Prairie Water & Light Comm Jump to: navigation, search Name Sun Prairie Water & Light Comm Place Wisconsin Utility Id 18312 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Area Lighting 1000w Halide existing poles Lighting Area Lighting 1000w Halide provided poles Lighting Area Lighting 100w HPS existing poles Lighting Area Lighting 100w HPS provided poles Lighting Area Lighting 150w HPS existing poles Lighting

2

Newnan Wtr, Sewer & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Newnan Wtr, Sewer & Light Comm Newnan Wtr, Sewer & Light Comm Jump to: navigation, search Name Newnan Wtr, Sewer & Light Comm Place Georgia Utility Id 13547 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Power Rates Commercial Large Power Service Industrial Residential Power Rates Residential Security Lighting - 100 Watt (Decorative) Lighting Security Lighting - 1000 Watt (Directional Flood) Lighting Security Lighting - 1000 Watt (Metal Halide Flood) Lighting Security Lighting - 100W (Cobra or Open) Lighting

3

Albany Water Gas & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Water Gas & Light Comm Water Gas & Light Comm Jump to: navigation, search Name Albany Water Gas & Light Comm Place Georgia Utility Id 230 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Demand Commercial Commercial Non-Demand Commercial Large Commercial Demand Commercial Residential Residential Security Lights 1000 Watt Metal Halide Metal Pole Lighting Security Lights 1000 Watt Metal Halide Wooden Pole Lighting Security Lights 150 HPSV Fixtures Metal Pole Lighting Security Lights 150 HPSV Fixtures Wooden Pole Lighting

4

Moose Lake Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Lake Water & Light Comm Lake Water & Light Comm Jump to: navigation, search Name Moose Lake Water & Light Comm Place Minnesota Utility Id 12897 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 2-250HPS-FRO Lighting 250 HPS ELEOLY Lighting 3-250 HPS Lighting 4-250 HPS Lighting 400 HPS Rent Lighting BEST OIL CO Commercial BIKE TRAIL Commercial CIP Commercial Commercial Demand Commercial Commercial Electricity Commercial Demand 1 Phase Industrial

5

Glencoe Light & Power Comm | Open Energy Information  

Open Energy Info (EERE)

Glencoe Light & Power Comm Glencoe Light & Power Comm Jump to: navigation, search Name Glencoe Light & Power Comm Place Minnesota Utility Id 7292 Utility Location Yes Ownership M NERC Location MRO ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Area/Security Lighting-175 Watt Lighting Area/Security Lighting-400 Watt Lighting Large Industrial Service-Primary Voltage Industrial Large industrial Service-secondary volatge Industrial Residential Service Residential

6

Paragould Light & Water Comm | Open Energy Information  

Open Energy Info (EERE)

Paragould Light & Water Comm Paragould Light & Water Comm Jump to: navigation, search Name Paragould Light & Water Comm Place Arkansas Utility Id 14446 Utility Location Yes Ownership M NERC Location SPP NERC SPP Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Single Phase Commercial General Three Phase Commercial Industrial Industrial Residential Residential Security Lighting 100 W HPS Lighting

7

Cedarburg Light & Water Comm | Open Energy Information  

Open Energy Info (EERE)

Cedarburg Light & Water Comm Cedarburg Light & Water Comm Jump to: navigation, search Name Cedarburg Light & Water Comm Place Wisconsin Utility Id 3208 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service - Regular Rate - Single Phase Commercial General Service - Regular rate - Three Phase Commercial General Service Optional Time-of-Day Rate - Single Phase 7am-7pm Commercial General Service Optional Time-of-Day Rate - Single Phase 8am-8pm Commercial

8

Brodhead Water & Lighting Comm | Open Energy Information  

Open Energy Info (EERE)

Brodhead Water & Lighting Comm Brodhead Water & Lighting Comm Jump to: navigation, search Name Brodhead Water & Lighting Comm Place Wisconsin Utility Id 2273 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service - GS-1 - Single Phase Commercial General Service - GS-1 Three Phase Commercial General-OTD 1-Three Phase Commercial General-OTD- Single Phase Commercial Industrial Power Time of day CP-3 above 1,000kW Demand Primary Metering and Transformer Discount Industrial Industrial Power Time of day CP-3 above 1,000kW Demand Industrial

9

Waterloo Light & Water Comm | Open Energy Information  

Open Energy Info (EERE)

Waterloo Light & Water Comm Waterloo Light & Water Comm Jump to: navigation, search Name Waterloo Light & Water Comm Place Wisconsin Utility Id 20182 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service Three Phase Commercial General Service Single Phase Commercial General Service TOU Single Phase Commercial General Service TOU Three Phase Commercial Industrial TOU Industrial Large Power TOU Industrial Renewable Energy Rider 1 Commercial Renewable Energy Rider 2 Industrial

10

North Branch Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

North Branch Water & Light Comm North Branch Water & Light Comm Place Minnesota Utility Id 13681 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Large General Service Industrial Residential Residential Residential- Seasonal Residential Average Rates Residential: $0.1250/kWh Commercial: $0.1140/kWh Industrial: $0.0750/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a"

11

Oconto Falls Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Oconto Falls Water & Light Comm Oconto Falls Water & Light Comm Place Wisconsin Utility Id 13965 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service Industrial Cp-1 Small Power Service Primary Metering Discount with Parallel Generation(20kW or less) Industrial Cp-1 Small Power Service Primary Metering Discount Industrial Cp-1 Small Power Service with Parallel Generation(20kW or less) Industrial Cp-1 TOD Small Power Optional Time-of-Day Service Primary Metering Discount

12

comm022  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

3 Comm 22.10 3 Comm 22.10 DEPARTMENT OF COMMERCE Unofficial Text (See Printed Volume). Current through date and Register shown on Title Page. Register, March, 2009, No. 639 Chapter Comm 22 ENERGY CONSERVATION Subchapter I - Scope and Application Comm 22.01 Scope. Comm 22.02 Application. Subchapter II - Definitions Comm 22.10 Definitions. Subchapter III - Insulation Materials and Installation Comm 22.20 Basic requirements. Comm 22.21 Protection of insulation. Subchapter IV - Dwelling Thermal Envelope Comm 22.30 General design requirements. Comm 22.31 Prescriptive insulation and fenestration criteria. Comm 22.32 Specific insulation requirements. Comm 22.33 Slab floors. Comm 22.34 Crawl spaces. Comm 22.35 Thermally isolated sunrooms. Comm 22.36 Fenestration. Comm 22.37 Air leakage. Comm 22.38

13

COMM REF  

Office of Legacy Management (LM)

4 4 COMM REF _ ADMIN RCD _ TECHNICAL SERVICES DIVISION (TSD) BACKFIT (Documents dated prior to 1 November 1988) FUSRAP COMMUNICATIONS DISTRIBUTION DOEJORO TECHNICAL SERVICES DIVISION (CE-53) BECHTEL NATIONAL., INC. - JOB 14501 RESPONSE TRACKING INFORMAnON I lOWED BY: (ORG) I TARGET DATE I I CLOSING CCN COMPL DATE I CLOSING REF SECONDARY: I I OWED TO: lOWED BY: (ORG) I / I I I TARGET DATE I CLOSING CCN COMPL DATE CLOSING REF _ _~_.::..:~ TO_---i!on~/:....:.$uT'__ COMM DATaO..8//3/il ADDR CODE I I I I CLOSES CCN WBS _~/_=I.!>_.:.../ __ ......!/:....l>.:.._.....¥'__ _ NUMBER ST SUBJECT CODE If~ 0 DOE FILE NO. _ AFFECTED DOCUMENT &0 tA59i< c:eN:f:I: ~~~..:lII...3o...3lo...3~~~:lo..3..~..:lII...3o...3lo...3~~~:lo..3..~.3o..Jl,..JIrt..3I~~~~:lo..3..~.JIo.:CCN _

14

Enhancing the Light Extraction of InGaN Light-Emitting Diodes by Patterning the Dicing Streets  

Science Journals Connector (OSTI)

Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum...

Lin, Hung Cheng; Tseng, Yen Chun; Chyi, Jen Inn; Lee, Chia Ming

15

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Journals Connector (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung; Keun Man Song; Young Su Choi; Hyeong-Ho Park; Hyun-Beom Shin; Ho Kwan Kang; Jaejin Lee

2013-01-01T23:59:59.000Z

16

Mohawk Municipal Comm | Open Energy Information  

Open Energy Info (EERE)

Municipal Comm Municipal Comm Jump to: navigation, search Name Mohawk Municipal Comm Place New York Utility Id 12759 Utility Location Yes Ownership M NERC Location NPCC Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Industrial Rate Industrial Large Commercial Commercial Public Street Lighting Lighting Security Lighting 150 w lamp Lighting Security Lighting 175 w lamp Lighting Security Lighting 250 w lamp Lighting Security Lighting 400 w lamp Lighting Single-Phase Residential Residential Small Commercial Business Commercial Average Rates Residential: $0.0366/kWh

17

Williamstown Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Williamstown Utility Comm Williamstown Utility Comm Jump to: navigation, search Name Williamstown Utility Comm Place Kentucky Utility Id 20731 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes ISO MISO Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 100 Watt High Pressure Sodium Area Light Lighting 150 Watt High Pressure Sodium Floodlight Lighting 175 Watt Mercury Vapor Area Light Lighting 250 Watt High Pressure Sodium Area Light Lighting 250 Watt High Pressure Sodium Floodlight Lighting 400 Watt High Pressure Sodium Area Light Lighting

18

ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission  

E-Print Network [OSTI]

ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission angle Emily D Kosten1 solar cell under direct sunlight, light is received from the solar disk, but is re-emitted isotropically.1038/lsa.2013.1; published online 4 January 2013 Keywords: detailed balance; GaAs solar cell; light

Atwater, Harry

19

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

20

Plasmonic nanoparticle enhanced light absorption in GaAs solar cells Keisuke Nakayama,a  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced light absorption in GaAs solar cells Keisuke Nakayama,a Katsuaki 22 September 2008 We demonstrate an improvement in efficiency of optically thin GaAs solar cells-ratio nanoparticles effectively increases the optical path of the incident light in the absorber layers resulting

Atwater, Harry

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Corbin City Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Corbin City Utilities Comm Corbin City Utilities Comm Jump to: navigation, search Name Corbin City Utilities Comm Place Kentucky Utility Id 4341 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png LGS-1 Large General Service Industrial LGS-2 Large General Srvice V2 Industrial RS-1 Residential Service Residential SGS-1 Small General Service Commercial SLS-1 Security Lighting Service-100 Watt Open Bottom Lighting SLS-1 Security Lighting Service-250 Watt Cobra Lighting SLS-1 Security Lighting Service-250 Watt Directional Flood Lighting

22

Preston Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Preston Public Utilities Comm Place Minnesota Utility Id 15348 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png All Electric Residential Area of Security Lighting- (175W Mercury) Lighting Area of Security Lighting- (400W Lucalox) Lighting Area of Security Lighting- (400W Mercury) Lighting Commercial All Electric- Rate 27 Commercial Commercial All Electric- Rate 28 Commercial

23

Greenville Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Utilities Comm Utilities Comm Jump to: navigation, search Name Greenville Utilities Comm Place North Carolina Utility Id 7639 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes ISO Other Yes Activity Transmission Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png County, Municipal, or Housing Authority Outdoor Lighting- 175W Mercury Vapor Lighting County, Municipal, or Housing Authority Outdoor Lighting- 250W Mercury Vapor Lighting County, Municipal, or Housing Authority Outdoor Lighting- 250W Sodium Vapor

24

Aitkin Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Aitkin Public Utilities Comm Aitkin Public Utilities Comm Jump to: navigation, search Name Aitkin Public Utilities Comm Place Minnesota Utility Id 174 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Industrial Industrial Residential (Peak 08:00 a.m. - 12:00 p.m.) Residential Residential (Peak 12:00 p.m. - 5:00 p.m.) Residential Residential (Peak 5:00 p.m. - 9:00 p.m.) Residential Residential Dual Fuel Residential Security Lights 150 Watt Lighting Security Lights 250 Watt Lighting

25

Hibbing Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Hibbing Public Utilities Comm Hibbing Public Utilities Comm Jump to: navigation, search Name Hibbing Public Utilities Comm Place Minnesota Utility Id 8543 Utility Location Yes Ownership M NERC Location MRO NERC FRCC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png -POWER SERVICE Commercial Commercial Security Lighting Rate - 100 Watt H.P.S Lighting Commercial Security Lighting Rate - 250 Watt H.P.S Lighting General Service - Single Phase Commercial General Service - Three Phase Commercial

26

Springfield Public Utils Comm | Open Energy Information  

Open Energy Info (EERE)

Springfield Public Utils Comm Springfield Public Utils Comm Place Minnesota Utility Id 17836 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Power Commercial Residential Residential Residential with Electric Heating Residential Street Lighting Lighting Average Rates Residential: $0.1180/kWh Commercial: $0.0998/kWh Industrial: $0.0979/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Springfield_Public_Utils_Comm&oldid=411601

27

Greenwood Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Greenwood Utilities Comm Place Mississippi Utility Id 7651 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial All Electric - Single Phase Commercial Commercial All Electric - Three Phase Commercial Cotton Gin Power Commercial General Lighting and Power - Single Phase Commercial General Lighting and Power - Three Phase Commercial Large General Service Commercial

28

New Prague Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name New Prague Utilities Comm Place Minnesota Utility Id 13480 Utility Location Yes Ownership M NERC Location MRO NERC RFC Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial - Single Phase Commercial Commercial - Three Phase Commercial Industrial Industrial Interruptible Commercial Large Industrial Industrial Residential service rates Residential Security Lights - Rental Lighting Small Industrial Industrial

29

Local indium segregation and band structure in high efficiencygreen light emitting InGaN/GaN diodes  

SciTech Connect (OSTI)

GaN/InGaN light emitting diodes (LEDs) are commercialized for lighting applications because of the cost efficient way that they produce light of high brightness. Nevertheless, there is significant room for improving their external emission efficiency from typical values below 10 percent to more than 50 percent, which are obtainable by use of other materials systems that, however, do not cover the visible spectrum. In particular, green-light emitting diodes fall short in this respect, which is troublesome since the human eye is most sensitive in this spectral range. In this letter advanced electron microscopy is used to characterize indium segregation in InGaN quantum wells of high-brightness, green LEDs (with external quantum efficiency as high as 15 percent at 75 A/cm2). Our investigations reveal the presence of 1-3 nm wide indium rich clusters in these devices with indium concentrations as large as 0.30-0.40 that narrow the band gap locally to energies as small as 2.65 eV.

Jinschek, Joerg R.; Erni, Rolf; Gardner, Nathan F.; Kim, AndrewY.; Kisielowski, Christian

2004-11-23T23:59:59.000Z

30

Redwood Falls Public Util Comm | Open Energy Information  

Open Energy Info (EERE)

Public Util Comm Public Util Comm Jump to: navigation, search Name Redwood Falls Public Util Comm Place Minnesota Utility Id 15793 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Area lighting 100 watt Lighting Area lighting 1000 watt Lighting Area lighting 150 watt Lighting Area lighting 250 watt Lighting Area lighting 400 watt Lighting Industrial service rate Industrial Large commercial service rate Commercial

31

Adrian Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Public Utilities Comm Public Utilities Comm Jump to: navigation, search Name Adrian Public Utilities Comm Place Minnesota Utility Id 150 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Large Commercial - LC Commercial Residential - RL Residential Residential Electric Heat Residential Security Lights - SL Commercial Small Commercial - SC Single-Phase Commercial Small Commercial - SC Three-Phase Commercial Average Rates Residential: $0.0955/kWh Commercial: $0.0980/kWh Industrial: $0.1120/kWh References

32

Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers  

Science Journals Connector (OSTI)

We investigate spectra of InGaN/GaN quantum well (QW) light-emitting diode (LED) structures with heavily doped barriers at different excitation levels. We model the spectral shape and energy position in frames of dominating mechanism of free electron ... Keywords: Band filling, Doped barriers, Emission spectra, Quantum well

B. Arnaudov; D. S. Domanevskii; S. Evtimova; Ch. Ivanov; R. Kakanakov

2009-02-01T23:59:59.000Z

33

Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes  

Science Journals Connector (OSTI)

We report on the important role played by internal quantum well (QW) fields in the anomalous inversion of capacitance transients in InGaN/GaN multi-QW light-emitting diodes (LEDs). This effect was observed by deep-level transient spectroscopy (DLTS) ... Keywords: Deep level, III-Nitride, Internal fields, Quantum well

L. Rigutti; A. Castaldini; A. Cavallini

2009-02-01T23:59:59.000Z

34

Princeton Public Utils Comm | Open Energy Information  

Open Energy Info (EERE)

Princeton Public Utils Comm Princeton Public Utils Comm Place Minnesota Utility Id 15387 Utility Location Yes Ownership M NERC Location MAPP NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 100W High Pressure Sodium Lighting 1500W Quartz Commercial 250W High Pressure Sodium Lighting 250W Spot Commercial 400W High Pressure Sodium Lighting Large General Service Commercial Large General Service- Time of Use Commercial Large Power Service Industrial Large Power Service- Time of Use Industrial Residential Service Residential

35

Green light emitting diode grown on thick strain-reduced GaN template  

Science Journals Connector (OSTI)

Abstract We report a green light-emitting diode (LED) grown on thick strain-reduced GaN template. As the injection current changes from 20mA to 120mA, blue-shift of EL peak wavelength reduces from 9.3nm for the LED on sapphire substrate to 6.8nm for the LED grown on thick strain-reduced GaN template. Furthermore, the light output power and external quantum efficiency of the LED on thick strain-reduced GaN template are respectively 1.48mW and 2.5% at the forward current of 20mA, which is twice as much as the LED on sapphire substrate. In contrast, the reverse current is 2?A lower than that of the LED on the sapphire at ?8V.

Jiankun Yang; Tongbo Wei; Qiang Hu; Ziqiang Huo; Baojuan Sun; Ruifei Duan; Junxi Wang

2015-01-01T23:59:59.000Z

36

Sleepy Eye Public Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Eye Public Utility Comm Eye Public Utility Comm Jump to: navigation, search Name Sleepy Eye Public Utility Comm Place Minnesota Utility Id 17320 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Electric Heat Residential Industrial Industrial Large General Commercial Residential Residential Security Lighting- 150W Lighting Security Lighting- 175W Lighting Security Lighting- 250W Lighting

37

Grand Rapids Public Util Comm | Open Energy Information  

Open Energy Info (EERE)

Rapids Public Util Comm Rapids Public Util Comm Jump to: navigation, search Name Grand Rapids Public Util Comm Place Minnesota Utility Id 7489 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png CITY COMMERCIAL Commercial CITY LIGHT & POWER Lighting CITY RESIDENTIAL Residential CONTROLLED WATER HEATING (CITY) Commercial CONTROLLED WATER HEATING (RURAL) Commercial ENTERTAINMENT LIGHTING RATE (CITY) Lighting ENTERTAINMENT LIGHTING RATE (RURAL) Lighting INDUSTRIAL (CITY) Industrial

38

Wafer-scale surface roughening for enhanced light extraction of high power AlGaInP-based light-emitting diodes  

Science Journals Connector (OSTI)

A new approach to surface roughening was established and optimized in this paper for enhancing the light extraction of high power AlGaInP-based LEDs, by combining ultraviolet (UV)...

Park, Hyeong-Ho; Zhang, Xin; Cho, Yunae; Kim, Dong-Wook; Kim, Joondong; Lee, Keun Woo; Choi, Jehyuk; Lee, Hee Kwan; Jung, Sang Hyun; Her, Eun Jin; Kim, Chang Hwan; Moon, A-Young; Shin, Chan-Soo; Shin, Hyun-Beom; Sung, Ho Kun; Park, Kyung Ho; Park, Hyung-Ho; Kim, Hi-Jung; Kang, Ho Kwan

2014-01-01T23:59:59.000Z

39

Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions  

SciTech Connect (OSTI)

This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

2014-02-03T23:59:59.000Z

40

Red light emitting solid state hybrid quantum dotnear-UV GaN LED devices  

Science Journals Connector (OSTI)

We produced coreshell (CdSe)ZnSe quantum dots by direct colloidal chemical synthesis and the surface-passivation methodan overcoating of the core CdSe with a larger-bandgap material ZnSe. The (CdSe)ZnSe quantum dots(QDs) play the role of a colour conversion centre. We call these quantum dots nanophosphors. We fabricated red light emitting hybrid devices of (CdSe)ZnSe QDs and a near-UV GaN LED by combining red light emitting (CdSe)ZnSe quantum dots (as a colour conversion centre) with a near-UV(NUV) GaN LED chip (as an excitation source). A few good red phosphors have been known for UV excitation wavelengths, and red phosphors for UV excitation have been sought for a long time. Here we tested the possibility of using (CdSe)ZnSe QDs as red nanophosphors for UV excitation. The fabricated red light emitting hybrid device of (CdSe)ZnSe and a NUV GaN LED chip showed a good luminance. We demonstrated that the (CdSe)ZnSe quantum dots were promising red nanophosphors for NUV excitation and that a red LED made of QDs and a NUV excitation source was a highly efficient hybrid device.

Hongjoo Song; Seonghoon Lee

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

White light generation by resonant nonradiative energy transfer from epitaxial InGaN/GaN quantum wells to colloidal CdSe/ZnS core/shell quantum dots  

E-Print Network [OSTI]

White light generation by resonant nonradiative energy transfer from epitaxial InGaN/GaN quantum n a l f o r p h y s i c s New Journal of Physics White light generation by resonant nonradiative white-light-generating nonradiative energy transfer (ET) from epitaxial quantum wells (QWs) to colloidal

Demir, Hilmi Volkan

42

Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model  

SciTech Connect (OSTI)

We propose a model to better investigate InGaN light-emitting diode (LED) internal efficiency by extending beyond the usual total carrier density rate equation approach. To illustrate its capability, the model is applied to study intrinsic performance differences between violet and green LEDs. The simulations show performance differences, at different current densities and temperatures, arising from variations in spontaneous emission and heat loss rates. By tracking the momentum-resolved carrier populations, these rate changes are, in turn, traced to differences in bandstructure and plasma heating. The latter leads to carrier distributions that deviate from the quasiequilibrium ones at lattice temperature.

Chow, Weng W.; Crawford, Mary H.; Tsao, Jeffrey Y.; Kneissl, Michael

2010-01-01T23:59:59.000Z

43

Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes  

SciTech Connect (OSTI)

We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO{sub 2}/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metalorganic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs), were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, In{sub x}Ga{sub 1x}N/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

Chung, Kunook; Beak, Hyeonjun; Tchoe, Youngbin; Oh, Hongseok; Yi, Gyu-Chul, E-mail: gcyi@snu.ac.kr [Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Yoo, Hyobin; Kim, Miyoung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)

2014-09-01T23:59:59.000Z

44

Wisconsin Rapids W W & L Comm | Open Energy Information  

Open Energy Info (EERE)

Rapids W W & L Comm Rapids W W & L Comm Jump to: navigation, search Name Wisconsin Rapids W W & L Comm Place Wisconsin Utility Id 20862 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Athletic Field Lighting Service Lighting General Service Three Phase Commercial General Service Single Phase Commercial General Service TOU Single Phase (8am to 8pm) Commercial General Service TOU Single Phase(7am to 7pm) Commercial General Service TOU Single Phase(9 am to 9pm) Commercial

45

GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition  

SciTech Connect (OSTI)

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300?C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.

Xu, Kun; Xu, Chen, E-mail: xuchen58@bjut.edu.cn; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China)] [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Xie, Yiyang [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Jie, E-mail: jie.sun@chalmers.se [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China) [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Mikroteknologi och Nanovetenskap, Chalmers Tekniska Hgskola AB, Gteborg 41296 (Sweden)

2013-11-25T23:59:59.000Z

46

Direct Water Splitting under Visible Light with a Nanostructured Photoanode and GaInP2 Photocathode  

SciTech Connect (OSTI)

Thin films of hematite nanorod and GaInP2 were used for direct water splitting under visible light. In open circuit conditions, the potential of hematite shifted cathodically and that of GaInP2 anodically, which generated an open circuit voltage between the two electrodes. In short circuit condition, the combination of the two photoelectrodes can split water under visible light illumination, though with a very low current of {micro}A/cm2 level even at 1 W/cm2 light. By means of chopped light, we found that hematite nanorod has a low photocurrent, which is responsible for the low short circuit current of the 2-electrode combination. The low photoresponse of hematite nanorods is due to the recombination of photo- generated charges, low holes mobility, and short diffusion length.

Wang, H.; Deutsch, T.; Turner, J.

2008-01-01T23:59:59.000Z

47

Tailoring broadband light trapping of GaAs and Si substrates by self-organised nanopatterning  

SciTech Connect (OSTI)

We report on the formation of high aspect ratio anisotropic nanopatterns on crystalline GaAs (100) and Si (100) substrates exploiting defocused Ion Beam Sputtering assisted by a sacrificial self-organised Au stencil mask. The tailored optical properties of the substrates are characterised in terms of total reflectivity and haze by means of integrating sphere measurements as a function of the morphological modification at increasing ion fluence. Refractive index grading from sub-wavelength surface features induces polarisation dependent anti-reflection behaviour in the visible-near infrared (VIS-NIR) range, while light scattering at off-specular angles from larger structures leads to very high values of the haze functions in reflection. The results, obtained for an important class of technologically relevant materials, are appealing in view of photovoltaic and photonic applications aiming at photon harvesting in ultrathin crystalline solar cells.

Martella, C.; Chiappe, D.; Mennucci, C.; Buatier de Mongeot, F. [Dipartimento di Fisica, Universit di Genova, via Dodecaneso 33, I-16146 Genova (Italy)

2014-05-21T23:59:59.000Z

48

Angular distribution of polarized spontaneous emissions and its effect on light extraction behavior in InGaN-based light emitting diodes  

SciTech Connect (OSTI)

Angular intensity distributions of differently polarized light sources in multiple quantum wells (MQWs) and their effects on extraction behavior of spontaneous emission from light emitting diode (LED) chips have been studied. Theoretical calculation based on kp approximation, ray tracing simulation and angular electroluminescence measurement were applied in this work. It is found that the electron-hole recombination in the InGaN MQWs produces a spherical distribution of an s-polarized source and a dumbbell-shaped p-polarized source. Light rays from different polarized sources experience different extraction processes, determining the polarization degree of electro-luminescence and extraction efficiency of LEDs.

Yuan, Gangcheng; Chen, Xinjuan; Yu, Tongjun, E-mail: tongjun@pku.edu.cn; Lu, Huimin; Chen, Zhizhong; Kang, Xiangning; Wu, Jiejun; Zhang, Guoyi [State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)

2014-03-07T23:59:59.000Z

49

Color optimization of conjugated-polymer/InGaN Hybrid white light emitting diodes by incomplete energy transfer  

Science Journals Connector (OSTI)

Abstract By using the wavelength conversion method, white light emitting diodes (WLEDs) were produced by applying mixtures of polysiloxane and fluorescent polymers on InGaN based light emitting diodes. UV curable organicinorganic hybrid materials with high refractive index (1.561), compromised optical, thermal and mechanical properties was used as encapsulants. Red light emitting fluorescent FABD polymer (with 9,9-dioctylfluorene (F), anthracene (A) and 2,1,3-benzothiadiazole (B), and 4,7-bis(2-thienyl)-2,1,3-benzothiadiazole (D) repeating units) and green light emitting fluorescent FAB polymer were used as wavelength converters. The encapsulant/fluorescent polymer mixture and InGaN produce the white light by incomplete energy transfer mechanism. \\{WLEDs\\} with high color rendering index (CRI, about 93), and tunable correlated color temperature (CCT) properties can be produced by controlling the composition and chemical structures of encapsulating polymer and fluorescent polymer in hybrid materials, offering cool-white and neutral-white LEDs.

Chi-Jung Chang; Chun-Feng Lai; P. Madhusudhana Reddy; Yung-Lin Chen; Wei-Yung Chiou; Shinn-Jen Chang

2014-01-01T23:59:59.000Z

50

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

51

InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices  

SciTech Connect (OSTI)

We present the band parameters such as band gap, spin-orbit splitting energy, band offsets and strain of InGaAsBi on InP based on recent experimental data. It is shown that InGaAsBi is promising for near- and mid-infrared photonic devices operating from 0.30.8?eV (1.54??m) on conventional InP substrates. We also show how bismuth may be used to form alloys whereby the spin-orbit splitting energy (?{sub SO}) is large and controllable and can, for example, be made larger than the band gap (E{sub g}) thereby providing a means of suppressing non-radiative hot-hole producing Auger recombination and inter-valence band absorption both involving the spin-orbit band. This is expected to improve the high-temperature performance and thermal stability of light emitting devices.

Jin, Shirong; John Sweeney, Stephen [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

2013-12-07T23:59:59.000Z

52

InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer  

Science Journals Connector (OSTI)

...Wang. 2011 Electrical characteristics of vertical light emitting diode with n-type contact on a selectively wet-etching...Measurement of electron overflow in 450 nm InGaN light-emitting diode structures. Appl. Phys. Lett. 94, 061116...

2013-01-01T23:59:59.000Z

53

Tuntutuliak Comm Services Assn | Open Energy Information  

Open Energy Info (EERE)

Tuntutuliak Comm Services Assn Tuntutuliak Comm Services Assn Jump to: navigation, search Name Tuntutuliak Comm Services Assn Place Alaska Utility Id 19267 Utility Location Yes Ownership C NERC Location AK Operates Generating Plant Yes Activity Generation Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png All Other Community Facilities Residential Residential Residential Washeteria Residential Average Rates Residential: $0.7200/kWh Commercial: $0.6820/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Tuntutuliak_Comm_Services_Assn&oldid=411884

54

Lanesboro Public Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Lanesboro Public Utility Comm Lanesboro Public Utility Comm Jump to: navigation, search Name Lanesboro Public Utility Comm Place Minnesota Utility Id 10685 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial- Phase 2 Commercial Commercial- Three Phase Commercial Residential Residential Average Rates Residential: $0.1140/kWh Commercial: $0.1090/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Lanesboro_Public_Utility_Comm&oldid=410975

55

Truman Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Truman Public Utilities Comm Truman Public Utilities Comm Jump to: navigation, search Name Truman Public Utilities Comm Place Minnesota Utility Id 19237 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Residential: $0.1360/kWh Commercial: $0.1410/kWh Industrial: $0.1150/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Truman_Public_Utilities_Comm&oldid=411881"

56

Hawley Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Hawley Public Utilities Comm Hawley Public Utilities Comm Jump to: navigation, search Name Hawley Public Utilities Comm Place Minnesota Utility Id 8307 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 3 PHASE COMMERCIAL ELECTRIC Commercial COMMERCIAL ELECTRIC Commercial ELECTRIC VARIANCE Commercial GENERATOR RATE Commercial GROUND SOURCE HEAT PUMP - RESIDENTIAL Residential LARGE COMMERCIAL ELECTRIC Commercial MINNKOTA WIND SURCHARGE - COMMERCIAL Commercial MINNKOTA WIND SURCHARGE - RESIDENTIAL Residential

57

Barbourville Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Barbourville Utility Comm Barbourville Utility Comm Jump to: navigation, search Name Barbourville Utility Comm Place Kentucky Utility Id 1201 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Activity Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Electric Rate Commercial Large Power Electric Commercial Residential Electric Service Residential Average Rates Residential: $0.0778/kWh Commercial: $0.0757/kWh Industrial: $0.0626/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from

58

Shakopee Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Shakopee Public Utilities Comm Shakopee Public Utilities Comm Jump to: navigation, search Name Shakopee Public Utilities Comm Place Minnesota Website www.ci.shakopee.mn.us/ind Utility Id 16971 Utility Location Yes Ownership M NERC Location MRO Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial service rate Commercial Large general service rate Industrial Large industrial service rate Industrial Residential service rate Residential Residential service rate - senior citizens Residential Average Rates Residential: $0.1080/kWh Commercial: $0.0946/kWh Industrial: $0.0805/kWh

59

Hutchinson Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Hutchinson Utilities Comm Hutchinson Utilities Comm Jump to: navigation, search Name Hutchinson Utilities Comm Place Minnesota Utility Id 9130 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Activity Retail Marketing Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png LARGE GENERAL ELECTRIC SERVICE Industrial LARGE GENERAL ELECTRIC SERVICE - PRIMARY VOLTAGE (CUSTOMER OWNED) Industrial

60

Juneau Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Juneau Utility Comm Place Wisconsin Utility Id 9936 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service between 50kW and 200kW Demand Primary Metering and Transformer Ownership Discount with Parallel Generation(20kW or less) Industrial Cp-1 Small Power Service between 50kW and 200kW Demand Primary Metering and Transformer Ownership Discount Industrial Cp-1 Small Power Service between 50kW and 200kW Demand Primary Metering

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Easton Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Utilities Comm Utilities Comm Jump to: navigation, search Name Easton Utilities Comm Place Maryland Utility Id 5625 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes RTO PJM Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png LARGE GENERAL SERVICE Commercial LARGE GENERAL SERVICE(Primary Metering) Commercial PRIMARY GENERAL SERVICE Commercial RESIDENTIAL RATE Residential SMALL GENERAL SERVICE Commercial SMALL GENERAL SERVICE(Primary Metering) Commercial

62

Reedsburg Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Reedsburg Utility Comm Reedsburg Utility Comm Jump to: navigation, search Name Reedsburg Utility Comm Place Wisconsin Utility Id 15804 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service Industrial Cp-1 Small Power Service Primary Metering Discount with Parallel Generation(20kW or less) Industrial Cp-1 Small Power Service Primary Metering and Transformer Ownership Discount Industrial Cp-1 Small Power Service Primary Metering and Transformer Ownership

63

Fort Valley Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Utility Comm Utility Comm Jump to: navigation, search Name Fort Valley Utility Comm Place Georgia Utility Id 6617 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Operates Generating Plant Yes Activity Buying Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png COMMERCIAL: #20 Commercial INDUSTRIAL LARGE POWER: #26/28 Industrial INSTITUTIONAL: #14 Commercial Industrial Small Power Industrial RESIDENTIAL: #10 Residential SMALL COMMERCIAL: #22 Commercial Average Rates Residential: $0.0787/kWh Commercial: $0.1030/kWh Industrial: $0.0772/kWh References

64

Bagley Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Bagley Public Utilities Comm Bagley Public Utilities Comm Jump to: navigation, search Name Bagley Public Utilities Comm Place Minnesota Utility Id 1101 Utility Location Yes Ownership M NERC Location MRO Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Electric Commercial Commercial Electric Demand Commercial Commercial Electric Demand Three Phase Commercial Commercial Electric Three Phase Commercial Electric Heat Non Ripple New Residential Electric Heat Non Ripple Old Residential Electric Heat Ripple Plan 1 Residential Electric Heat Ripple Plan 2 Residential

65

Proctor Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Proctor Public Utilities Comm Proctor Public Utilities Comm Jump to: navigation, search Name Proctor Public Utilities Comm Place Minnesota Utility Id 15460 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Electric- Demand Metering Commercial Commercial Electric- Single Phase Commercial Commercial Electric- Three Phase Commercial Residential Electric Residential Residential- Duel Fuel Residential Residential- ETS Residential Average Rates Residential: $0.0866/kWh Commercial: $0.0849/kWh Industrial: $0.0825/kWh

66

Algoma Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Algoma Utility Comm Algoma Utility Comm Jump to: navigation, search Name Algoma Utility Comm Place Wisconsin Utility Id 307 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Controlled Interdepartmental Service Commercial Customer Owner Generation Systems (Greater than 20kW) Industrial General Service - Optional Time-of-Day Single Phase less than 100kW 7am-7pm Industrial General Service - Optional Time-of-Day Single Phase less than 100kW 9am-9pm Industrial General Service - Optional Time-of-Day Single Phase less than 100kW 8am-8pm

67

Orlando Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Orlando Utilities Comm Orlando Utilities Comm (Redirected from OUC) Jump to: navigation, search Name Orlando Utilities Comm Place Florida Utility Id 14610 Utility Location Yes Ownership M NERC Location FRCC NERC FRCC Yes NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Buying Distribution Yes Activity Wholesale Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Firm General Service Demand Primary Service Standby Service Industrial

68

Henderson City Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Henderson City Utility Comm Henderson City Utility Comm Jump to: navigation, search Name Henderson City Utility Comm Place Kentucky Utility Id 8449 Utility Location Yes Ownership M NERC Location serc NERC RFC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Demand Rate Schedule Schedule D Industrial General Service Rate Schedule Schedule GS-Single Phase- Commercial Commercial General Service Rate Schedule Schedule GS-Single Phase- Industrial Industrial General Service Rate Schedule Schedule GS-Three Phase- Commercial

69

Fairmont Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Public Utilities Comm Public Utilities Comm Jump to: navigation, search Name Fairmont Public Utilities Comm Place Minnesota Utility Id 6151 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png ALL ELECTRIC RATE Industrial COMMERCIAL SERVICE Commercial GENERAL SERVICE Industrial INDUSTRIAL SERVICE Industrial INDUSTRIAL SERVICE - PRIMARY VOLTAGE Industrial RESIDENTIAL HEAT Residential RESIDENTIAL SERVICE Residential RURAL SERVICE Residential

70

Crisp County Power Comm | Open Energy Information  

Open Energy Info (EERE)

Crisp County Power Comm Crisp County Power Comm Jump to: navigation, search Name Crisp County Power Comm Place Georgia Utility Id 4538 Utility Location Yes Ownership P NERC Location SERC NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Retail Marketing Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Agriculture Process Service Commercial Farm Service Commercial Fuel Cost Recovery Schedule- Primary Distribution Commercial Fuel Cost Recovery Schedule- Secondary Distribution Commercial Fuel Cost Recovery Schedule- Transmission Commercial

71

Direct Water Splitting under Visible Light with Nanostructured Hematite and WO3 Photoanodes and a GaInP2 Photocathode  

SciTech Connect (OSTI)

A p-GaInP{sub 2} photocathode was paired with nanostructured hematite and tungsten trioxide photoanodes to investigate the utility of these systems for direct water splitting under visible light illumination. For the hematite system, under illumination at open-circuit conditions, the potential of hematite shifts cathodically and that of the GaInP{sub 2} shifts anodically. Under short-circuit condition and visible light illumination, the combination of the two photoelectrodes can split water, though with a very low rate of a few {micro}A/cm{sup 2} even at an intensity of 1 W/cm{sup 2}. It was determined that the very low photocurrent from the hematite nanorod photoelectrode limits the short-circuit current of the two-photoelectrode combination. Similar potential shifts were observed with the nanostructured WO{sub 3}/GaInP{sub 2} combination. However, at light intensities below 0.2 W/cm{sup 2}, the short-circuited combination would not split water due to an insufficient potential difference. Above 0.2 W/cm{sup 2}, the combination can split water under visible light, with {approx}20 {micro}A/cm{sup 2} obtained at 1 W/cm{sup 2}. A linear photocurrent-light intensity relationship was observed and was attributed to efficient charge transfer and a low recombination of the charge carriers. The bandgap and the associated absorption limit of WO{sub 3} remain a challenge for a higher efficiency system.

Wang, H.; Deutsch, T.; Turner, J. A.

2008-01-01T23:59:59.000Z

72

Confocal microphotoluminescence of InGaN-based light-emitting diodes Koichi Okamoto,a  

E-Print Network [OSTI]

for conventional incandescent and fluorescent light bulbs.5 However, luminous efficacies of commercial white LEDs spectrum region, the external quantum efficiency ext of the LED has achieved 20% at room temperature 25 lm/W have been still lower than that of fluorescent tubes 75 lm/W . Thus, the most important re

Okamoto, Koichi

73

Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission  

SciTech Connect (OSTI)

Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.

Ko, Suk-Min; Kwack, Ho-Sang; Park, Chunghyun; Yoo, Yang-Seok; Cho, Yong-Hoon, E-mail: yhc@kaist.ac.kr [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)] [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kwon, Soon-Yong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of) [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Jin Kim, Hee; Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)] [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Si Dang, Le [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Nel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)] [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Nel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

2013-11-25T23:59:59.000Z

74

Wyandotte Municipal Serv Comm | Open Energy Information  

Open Energy Info (EERE)

Wyandotte Municipal Serv Comm Wyandotte Municipal Serv Comm Place Michigan Utility Id 21048 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png HEATING STEAM RATE Residential HOT WATER DISTRICT HEATING RATE Commercial LARGE GENERAL SERVICE RATE Commercial Commercial LARGE GENERAL SERVICE RATE Commercial (Time-Differentiated Meter) Commercial LARGE GENERAL SERVICE RATE Industrial (Time-Differentiated Meter)

75

Florence Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Florence Utility Comm Florence Utility Comm Jump to: navigation, search Name Florence Utility Comm Place Wisconsin Utility Id 6424 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service between 50kW and 200kW Demand with Parallel Generation (20 kW or less) Industrial Cp-1 Small Power Service between 50kW and 200kW Demand Industrial Cp-1 TOD Small Power Optional Time-of-Day Service between 50kW and 200kW Demand 7am-9pm with Parallel Generation(20 kW or less) Industrial

76

Doubly resonant second harmonic generation of 2.0 pm light in coupled InGaAs/AIAs quantum wells  

E-Print Network [OSTI]

energiesin n-type QWs to reach the technologically important 2 pm wavelength,6,7 where compact InGaAsP and Ga. The absorption spectrum of the sample is shown in Fig. 2. Absorption peaks at Et,=300 meV (4.1

Fejer, Martin M.

77

Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes  

SciTech Connect (OSTI)

Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.

Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wu, Kui; Sun, Bo; Zhang, Yonghui; Chen, Yu; Huo, Ziqiang; Hu, Qiang; Wang, Junxi; Zeng, Yiping; Li, Jinmin [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China); Lan, Ding [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080 (China)

2014-06-15T23:59:59.000Z

78

Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography  

SciTech Connect (OSTI)

The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6 through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-07-07T23:59:59.000Z

79

Orlando Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Name Orlando Utilities Comm Place Florida Utility Id 14610 Utility Location Yes Ownership M NERC Location FRCC NERC FRCC Yes NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Buying Distribution Yes Activity Wholesale Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Firm General Service Demand Primary Service Standby Service Industrial Firm General Service Demand Standby Service Industrial

80

Zigzag and helical AlN layer prepared by glancing angle deposition and its application as a buffer layer in a GaN-based light-emitting diode  

Science Journals Connector (OSTI)

This study investigates an aluminum nitride (AlN) nanorod structure sputtered by glancing angle deposition (GLAD) and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The ray tracing ...

Lung-Chien Chen; Ching-Ho Tien; Liu Xuguang; Xu Bingshe

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode  

Science Journals Connector (OSTI)

Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current...

Park, Yun Soo; Lee, Hwan Gi; Yang, Chung-Mo; Kim, Dong-Seok; Bae, Jin-Hyuk; Cho, Seongjae; Lee, Jung-Hee; Kang, In Man

2012-01-01T23:59:59.000Z

82

City of Public Works Comm- Fayetteville, North Carolina (Utility Company) |  

Open Energy Info (EERE)

Works Comm- Fayetteville, North Carolina (Utility Company) Works Comm- Fayetteville, North Carolina (Utility Company) Jump to: navigation, search Name Public Works Comm-City of Fayetteville Place North Carolina Utility Id 6235 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes ISO Other Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 108 Medium Power Service Industrial 108 Medium Power Service Primary Discount Industrial 110 Small Power Service Commercial

83

Fitzgerald Wtr Lgt & Bond Comm | Open Energy Information  

Open Energy Info (EERE)

Fitzgerald Wtr Lgt & Bond Comm Fitzgerald Wtr Lgt & Bond Comm Jump to: navigation, search Name Fitzgerald Wtr Lgt & Bond Comm Place Georgia Utility Id 6380 Utility Location Yes Ownership M NERC Location SERC NERC RFC Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Industrial Industrial Residential City Residential Residential Rural Residential Average Rates Residential: $0.1000/kWh Commercial: $0.1140/kWh Industrial: $0.0817/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a"

84

Spring Valley Pub Utils Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Spring Valley Pub Utils Comm Place Minnesota Utility Id 17824 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service Commercial Large Commercial (Demand) Commercial Primary Metering Demand Industrial Residential Residential Residential- All Electric Residential Small Commercial (Demand) Commercial Average Rates Residential: $0.1190/kWh Commercial: $0.0964/kWh

85

Public Serv Comm of Yazoo City | Open Energy Information  

Open Energy Info (EERE)

Serv Comm of Yazoo City Serv Comm of Yazoo City Jump to: navigation, search Name Public Serv Comm of Yazoo City Place Mississippi Utility Id 21095 Utility Location Yes Ownership P NERC Location SERC NERC SERC Yes NERC SPP Yes RTO SPP Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Electric - City Commercial Electric - PSC Commercial Electric - Schools Commercial Electric Commercial - Large Commercial Electric Commercial - Seasonal Commercial Electric Commercial - Small Commercial

86

Colorado River Comm of Nevada | Open Energy Information  

Open Energy Info (EERE)

Comm of Nevada Comm of Nevada Jump to: navigation, search Name Colorado River Comm of Nevada Place Nevada Utility Id 4356 Utility Location Yes Ownership S NERC Location WECC NERC WECC Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Buying Distribution Yes Activity Wholesale Marketing Yes Activity Retail Marketing Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Commercial: $0.0656/kWh The following table contains monthly sales and revenue data for Colorado

87

New Ulm Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Ulm Public Utilities Comm Ulm Public Utilities Comm Jump to: navigation, search Name New Ulm Public Utilities Comm Place Minnesota Utility Id 13488 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png INDUSTRIAL SERVICE RATE Industrial LARGE COMMERCIAL SERVICE RATE Commercial MUNICIPAL-CITY SERVICE RATE Commercial MUNICIPAL-PUC SERVICE RATE Commercial RESIDENTIAL SERVICE RATE Residential SMALL COMMERCIAL SERVICE RATE Commercial WHOLE HOUSE HEATING RATE Residential

88

Lighting  

SciTech Connect (OSTI)

The lighting section of ASHRAE standard 90.1 is discussed. It applies to all new buildings except low-rise residential, while excluding specialty lighting applications such as signage, art exhibits, theatrical productions, medical and dental tasks, and others. In addition, lighting for indoor plant growth is excluded if designed to operate only between 10 p.m. and 6 a.m. Lighting allowances for the interior of a building are determined by the use of the system performance path unless the space functions are not fully known, such as during the initial stages of design or for speculative buildings. In such cases, the prescriptive path is available. Lighting allowances for the exterior of all buildings are determined by a table of unit power allowances. A new addition the exterior lighting procedure is the inclusion of facade lighting. However, it is no longer possible to trade-off power allotted for the exterior with the interior of a building or vice versa. A significant change is the new emphasis on lighting controls.

McKay, H.N. (Hayden McKay Lighting Design, New York, NY (US))

1990-02-01T23:59:59.000Z

89

Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)  

SciTech Connect (OSTI)

Energy storage is a key challenge in solar-driven renewable energy conversion. We promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si(100), which could reach both high photovoltaic efficiencies and evolve hydrogen directly without external bias. Homoepitaxial GaP(100) surface preparation was shown to have a significant impact on the semiconductor-water interface formation. Here, we grow a thin, pseudomorphic GaP nucleation buffer on almost single-domain Si(100) prior to GaPN growth and compare the GaP{sub 0.98}N{sub 0.02}/Si(100) surface preparation to established P- and Ga-rich surfaces of GaP/Si(100). We apply reflection anisotropy spectroscopy to study the surface preparation of GaP{sub 0.98}N{sub 0.02} in situ in vapor phase epitaxy ambient and benchmark the signals to low energy electron diffraction, photoelectron spectroscopy, and x-ray diffraction. While the preparation of the Ga-rich surface is hardly influenced by the presence of the nitrogen precursor 1,1-dimethylhydrazine (UDMH), we find that stabilization with UDMH after growth hinders well-defined formation of the V-rich GaP{sub 0.98}N{sub 0.02}/Si(100) surface. Additional features in the reflection anisotropy spectra are suggested to be related to nitrogen incorporation in the GaP bulk.

Supplie, Oliver, E-mail: oliver.supplie@tu-ilmenau.de [Technische Universitt Ilmenau, Institut fr Physik, Gustav-Kirchhoff-Str. 5, 98684 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Humboldt-Universitt zu Berlin, Institut fr Physik, Newtonstr. 15, 12489 Berlin (Germany); May, Matthias M.; Stange, Helena [Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Humboldt-Universitt zu Berlin, Institut fr Physik, Newtonstr. 15, 12489 Berlin (Germany); Hhn, Christian [Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Lewerenz, Hans-Joachim [Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); California Institute of Technology, Joint Center for Artificial Photosynthesis, 1200 East California Boulevard, Pasadena, California 91125 (United States); Hannappel, Thomas [Technische Universitt Ilmenau, Institut fr Physik, Gustav-Kirchhoff-Str. 5, 98684 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

2014-03-21T23:59:59.000Z

90

Les Roms comme minorit ethnique ? Un questionnement roumain.  

E-Print Network [OSTI]

1 Les Roms comme « minorité ethnique » ? Un questionnement roumain. Martin Olivera Article publié dans Roms et Gens du Voyage, nouvelles perspectives de recherche, Etudes tsiganes, n°39-40, 3ème acquis : les « Roms et Voyageurs » (Roma and Travellers) forment une minorité européenne, comptant entre

Paris-Sud XI, Université de

91

GaAsbased quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

92

New Castle Municipal Serv Comm | Open Energy Information  

Open Energy Info (EERE)

New Castle Municipal Serv Comm New Castle Municipal Serv Comm Place Delaware Utility Id 13424 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Space Heating (Grandfathered) Commercial Large General Service Commercial Demand Rate (Primary) Commercial Large General Service Commercial Demand Rate (Secondary) Commercial Medium General Service Commercial Demand Rate Commercial Residential Service Residential Residential Space Heating Residential Small General Service Commercial Non-Demand Rate Commercial

93

Light  

Science Journals Connector (OSTI)

Sunlight contains energy which can be directly converted into electricity in solar cells of various types. This is an example of what is called 'direct conversion', involving no moving parts or heat conversion processes. This chapter looks at photovoltaic and photoelectric devices and also at other ideas for using light energy, some of which operate in the infrared part of the spectrum. Solar electric power is a rapidly developing field, opening up many opportunities for novel applications, as well as requirements, including for storage, with one idea being solar-powered hydrogen production and then direct conversion to electricity in fuel cells. Direct conversion is not always efficient, and this chapter introduces the concept of 'energy return on energy invested'. In speculative mood this chapter also looks at the idea of a global grid, allowing daytime solar generation to be used on the night side of the planet.

David Elliott ? Pages 4-1 to 4-20

94

Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer  

Science Journals Connector (OSTI)

A surface plasmon (SP)-enhanced nanoporous GaN-based green LED based on top-down processing technology has been successfully fabricated. This SP-enhanced LED consists of nanopores...

Yu, Zhi-Guo; Zhao, Li-Xia; Wei, Xue-Cheng; Sun, Xue-Jiao; An, Ping-Bo; Zhu, Shi-Chao; Liu, Lei; Tian, Li-Xin; Zhang, Feng; Lu, Hong-Xi; Wang, Jun-Xi; Zeng, Yi-Ping; Li, Jin-Min

2014-01-01T23:59:59.000Z

95

Photonic crystal light emitting diode.  

E-Print Network [OSTI]

?? This master's thesis describe electromagnetic simulations of a gallium antimonide (GaSb) light emitting diode, LED. A problem for such devices is that most of (more)

Leirset, Erlend

2010-01-01T23:59:59.000Z

96

Surface Plasmon Coupled Light-emitting Diode  

Science Journals Connector (OSTI)

The fundamental phenomena, basic principles, and device fabrication and characterization of surface plasmon coupled InGaN/GaN quantum-well light-emitting diode are reviewed, including...

Chen, Horng-Shyang; Kuo, Yang; Lin, Chun-Han; Chen, Chia-Feng; Chou, Wang-Hsien; Chiu, Min-Hsuan; Shih, Pei-Ying; Su, Chia-Ying; Liao, Che-Hao; Hsieh, Chieh; Chen, Chih-Yen; Kiang, Yean-Woei; Yang, Chih-Chung

97

Optical remote monitoring of CH/sub 4/ gas using low-loss optical fiber link and InGaAsP light-emitting diode in 1. 33-. mu. m region  

SciTech Connect (OSTI)

Purely optical remote monitoring of low-level CH/sub 4/ gas is realized for the first time by the method employing a 2-km long-distance, low-loss silica optical fiber link and a compact absorption cell in conjunction with a high radiant InGaAsP light-emitting diode (LED) at 1.33 ..mu..m. Based on the present experiment, the detection limit of CH/sub 4/ in air was confirmed to be approximately 2000 ppm, i.e., 4% of the lower explosion limit of CH/sub 4/. This result supports the conclusion that the fully optical remote sensing system incorporating ultralow loss optical fiber networks and near infrared LEDs or laser diodes can be extensively used for the detection and surveillance of various inflammable and/or explosive gases in industrial and mining complexes as well as in residential areas.

Chan, K.; Ito, H.; Inaba, H.

1983-10-01T23:59:59.000Z

98

We describe the characteristics and application of a 265nm AlGaN light-emitting diode (LED) operated at 1 MHz repetition rate, 1.2 ns pulse duration, 1.32 W average power, 2.3 mW peak  

E-Print Network [OSTI]

We describe the characteristics and application of a 265nm AlGaN light-emitting diode (LEDnm bandwidth. The LED enables the fluorescence decay of weakly emitting phenylalanine to be measured and resonance energy transfer from phenylalanine to tyrosine and tryptophan, the convenience of the 265nm LED

Strathclyde, University of

99

CONOMIE ET STATISTIQUE N 457-458, 201298 L'automobile est parfois perue comme  

E-Print Network [OSTI]

#12;?CONOMIE ET STATISTIQUE N° 457-458, 201298 L'automobile est parfois perçue comme emblématique d'équipement et aux consommations matérielles (Gartman, 1991). Il est ainsi parfois avancé que l'automobile ne- nismes socio-économiques. L'automobile est de ce fait souvent prise comme exemple d'un bien dont les

Paris-Sud XI, Université de

100

de l'manation du thorium, on peut considrer le nombre 9,5 ions comme reprsentant assez bien,  

E-Print Network [OSTI]

75 de l'émanation du thorium, on peut considérer le nombre 9,5 ions comme représentant assez bien

Boyer, Edmond

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Sandia National Laboratories: Solid-State Lighting  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Optical performance of top-down fabricated InGaNGaN nanorod light emitting diode arrays On November 30, 2011, in Energy, Energy Efficiency, Solid-State Lighting EFRC researchers...

102

Comm. Nonlin. Sci Numer. Simul. 13, (2008), 1256-1263. Discrepancy principle for DSM II  

E-Print Network [OSTI]

Comm. Nonlin. Sci Numer. Simul. 13, (2008), 1256-1263. 1 #12;Discrepancy principle for DSM II A versions of discrepancy principles for the DSM (dynamical systems method) for finding the stopping time of the discrepancy principle for DSM was proved. This version con- sisted in solving the equation for t: ||T-1 a

103

Ontologies et classifications descriptives psychiatriques Au del du DSM : les ontologies comme aide  

E-Print Network [OSTI]

Ontologies et classifications descriptives psychiatriques Au delà du DSM : les ontologies comme'hospi- talisation issus du centre hospitalier Sainte-Anne, les ressources structurées seront la CIM-10, le DSM et problèmes de santé connexes (CIM - World Health Organization (1992)) dont le Chapitre 05 ­ « Troubles men

Paris-Sud XI, Université de

104

Cite this: CrystEngComm, 2013, 15, Calcite formation by hydrothermal carbonation of  

E-Print Network [OSTI]

Cite this: CrystEngComm, 2013, 15, 3392 Calcite formation by hydrothermal carbonation by hydrothermal carbonation of calcium hydroxide by a simulation strategy, in which both the chemical evolution calcite formation by hydrothermal carbonation of portlandite. Calcite is an important ubiquitous mineral

Montes-Hernandez, German

105

Lug A Mug Marketing Campaign One Less Cup Page 1 of 54 COMM 468-202  

E-Print Network [OSTI]

Lug A Mug Marketing Campaign ­ One Less Cup Page 1 of 54 COMM 468-202 Marketing Applications Lug A Mug Marketing Campaign Jasmine Teh Randy Pan Sami Dong Stephanie Gozali Steven Eng Willson Wong Yulichia Ong #12;Lug A Mug Marketing Campaign ­ One Less Cup Page 2 of 54 EXECUTIVE SUMMARY 5 PART I : AMS

106

Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate  

Broader source: Energy.gov [DOE]

This project is producing high-efficiency semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates.

107

GaNInGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaNInGaN LED devices. While most studies focus on output saturation known as current droop from InGaN layer effects, we show an alike influence from p-type GaNs inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

108

Structure and strain-relaxation effects of defects in InxGa1-xN epilayers  

E-Print Network [OSTI]

The direct band gap of InxGa1-xN can be engineered to emit light over the entire visible spectrum depending on the In content (x) of the film. InGaN-based alloys are thereby used to fabricate light-emitting diodes (LEDs), laser diodes (LDs) [1] [2... ] and solar cells [3] [4]. InGaN alloys are excellent candidates for the light-absorption layers in solar cell applications because of their high-energy radiation resistance [3] and because InGaN alloys across the 2 range of In compositions absorb light...

Rhode, S. L.; Fu, W. Y.; Moram, M. A.; Massabuau, F. C.-P.; Kappers, M. J.; McAleese, C.; Oehler, F.; Humphreys, C. J.; Dusane, R. O.; Sahonta, S.-L.

2014-09-10T23:59:59.000Z

109

White Light Generating Nonradiative Energy Transfer Directly from Epitaxial Quantum Wells to Colloidal Nanocrystal Quantum Dots  

Science Journals Connector (OSTI)

We present white light generating nonradiative Frster resonance energy transfer at a rate of (2ns)-1directly from epitaxial InGaN/GaN quantum wells to CdSe/ZnS...

Nizamoglu, Sedat; Sari, Emre; Baek, Jong-Hyeob; Lee, In-Hwan; Demir, Hilmi Volkan

110

Sandia National Laboratories: solid-state lighting technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

in the ... Optical performance of top-down fabricated InGaNGaN nanorod light emitting diode arrays On November 30, 2011, in Energy, Energy Efficiency, Solid-State Lighting...

111

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect (OSTI)

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

112

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

113

14 MHz rate photon counting with room temperature InGaAs/InP avalanche photodiodes  

E-Print Network [OSTI]

14 MHz rate photon counting with room temperature InGaAs/InP avalanche photodiodes PAUL L. VOSS based on InGaAs/InP avalanche photodiodes for use at 1.55 mm wavelength. Operation at room temperature at the above wavelengths for conventional high light-level measurements with PIN or ava- lanche photodiodes

Köprülü, Kahraman Güçlü

114

La fraude scientifique au CNRS Le CNRS, comme tous les tablissements de recherche, est confront la question de la  

E-Print Network [OSTI]

La fraude scientifique au CNRS Le CNRS, comme tous les établissements de recherche, est confronté à la question de la fraude scientifique. Qu'est-ce que la fraude ? trucage, manipulation des données cas individuels)? Il faut distinguer deux situations : - Le cas de fraude peut être découvert par l

van Tiggelen, Bart

115

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

116

Efficiency enhancement in GaAs solar cells using self-assembled microspheres  

Science Journals Connector (OSTI)

In this study we develop an efficient light harvesting scheme that can enhance the efficiency of GaAs solar cells using self-assembled microspheres. Based on the scattering of the...

Chang, Te-Hung; Wu, Pei-Hsuan; Chen, Sheng-Hui; Chan, Chia-Hua; Lee, Cheng-Chung; Chen, Chii -Chang; Su, Yan-Kuin

2009-01-01T23:59:59.000Z

117

Dire le rel. Let Us Now Praise Famous Men de James Agee et Walker Evans , comme exprience de la reprsentation  

E-Print Network [OSTI]

1 Dire le réel. Let Us Now Praise Famous Men de James Agee et Walker Evans (1941) 1 , comme laisse un excès d'oxygène, excès au sens où Agee 1 James Agee, Walker Evans, Let Us Now Praise Famous Men participaient aux actions du New Deal. Ils commandent donc à l'écrivain James Agee (1909-1955) un reportage

Paris-Sud XI, Université de

118

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect (OSTI)

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

119

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

120

Is it viable to improve light output efficiency by nano-light-emitting diodes?  

SciTech Connect (OSTI)

Nanopillar arrays with InGaN/GaN multiple-quantum-disks (MQDs) are fabricated by focused-ion-beam milling with surface damage layer removed by KOH wet etching. Nano-light-emitting diodes (Nano-LEDs) made of the InGaN/GaN MQD nanopillars are found to have 19.49% less output power than that of a conventional LED. The reasons are analyzed in detail and considering their current-voltage and electroluminescence characteristics, internal quantum efficiency, external quantum efficiency, light extraction, and wall-plug efficiency. Our results suggest that nanopillar-LED can outperform if the density can be increased to 2.81??10{sup 9}?cm{sup ?2} with the size unchanged or the size can be increased to 854.4?nm with the density unchanged.

Wang, Chao-Hung; Huang, Yu-Wen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)] [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Wu, Shang-En [Genesis Photonics Incorporation, Tainan 70101, Taiwan (China)] [Genesis Photonics Incorporation, Tainan 70101, Taiwan (China); Liu, Chuan-Pu, E-mail: cpliu@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China) [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-12-02T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Dire le rel. Let Us Now Praise Famous Men de James Agee et Walker Evans (1941)1 comme exprience de la reprsentation  

E-Print Network [OSTI]

1 Dire le réel. Let Us Now Praise Famous Men de James Agee et Walker Evans (1941)1 , comme rédacteurs avaient commandé du sens comme l'on commande un meuble à un 1 James Agee, Walker Evans, Let Us Now participaient aux actions du New Deal. Ils commandent donc à l'écrivain James Agee (1909-1955) un reportage

Paris-Sud XI, Université de

122

GaN High Power Devices  

SciTech Connect (OSTI)

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

123

Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation  

E-Print Network [OSTI]

subcells InGaAsP, InGaAs via direct wafer bonding.8 In order to monolithically interconnect between the top materials, enable increased conversion efficiency due to the higher absorption efficiency obtained from. The additional layer reduces the incident light inten- sity because of the free carrier absorption. A wafer

Atwater, Harry

124

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

125

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

126

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

127

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

128

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

129

Metal contacts on ZnSe and GaN  

SciTech Connect (OSTI)

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

130

Beta decay of Ga-62  

E-Print Network [OSTI]

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

131

Plasmonic Nanostructure Design for Efficient Light Coupling into Solar Cells  

E-Print Network [OSTI]

Plasmonic Nanostructure Design for Efficient Light Coupling into Solar Cells Vivian E. Ferry, Luke in thin film solar cells. In particular, the ability of plasmonic structures to localize light sunlight into guided modes in thin film Si and GaAs plasmonic solar cells whose back interface is coated

Atwater, Harry

132

Amber light-emitting diode comprising a group III-nitride nanowire active region  

DOE Patents [OSTI]

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22T23:59:59.000Z

133

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and  

E-Print Network [OSTI]

InN material lattice-matched to GaN will also be useful as cladding layer in laser structure. Specifically, Al) for solid state light- ing [1­19], visible diode lasers for both display and biosensing [20GaN and AlGaN in III-nitride based applications for LEDs [40­42] and laser diode (LD) [20­26], solar

Gilchrist, James F.

134

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect (OSTI)

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

135

Localization of degradation in InP/InGaAsP mushroom stripe lasers  

SciTech Connect (OSTI)

The rapid degradation observed in InP/InGaAsP mushroom stripe lasers covered with phosphosilicate glass (PSG) was investigated by comparing the light-current characteristics as a function of the preparation technique. We were able to show that the PSG-covering layer is not the reason for the rapid degradation. By inspecting the light-current characteristics before and after degradation and by additional underetching the laser structure after degradation we were able to localize the degraded regions on the open side walls of the InGaAsP active layer.

Jung, H.; Marschall, P.

1987-07-13T23:59:59.000Z

136

RECIPIENT:Gwinnett Co, GA  

Broader source: Energy.gov (indexed) [DOE]

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

137

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

138

Light Portal  

Science Journals Connector (OSTI)

The Light Portal was designed to organize and mark the pedestrian paths that circumnavigate the rectangle of the...

2006-01-01T23:59:59.000Z

139

Light's twist  

Science Journals Connector (OSTI)

...equal to the optical power divided by the speed of light, and hence go unnoticed in our everyday lives...approaching object equal to the power in the light beam (P) divided by the speed of light. The movement of the approaching object does...

2014-01-01T23:59:59.000Z

140

Light Properties Light travels at the speed of light `c'  

E-Print Network [OSTI]

LIGHT!! #12;Light Properties Light travels at the speed of light `c' C = 3 x 108 m/s Or 190.nasa.gov #12;The speed of light The speed of light `c' is equal to the frequency ` times the wavelength,000 miles/second!! Light could travel around the world about 8 times in one second #12;What is light?? Light

Mojzsis, Stephen J.

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Selected Headlines News In Solid-State Lighting  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Headline News | Tracking Reports | Hot Technical Papers | Citation Headline News | Tracking Reports | Hot Technical Papers | Citation Analysis Method | Credits & Disclaimer | Archived Headline News (Links not maintained) SELECTED HEADLINE NEWS This website is not being actively maintained -- see note on homepage. Editor's choice: NOTE: Provision of summaries, mention of specific manufacturers or products, or designation as an "Editor's Choice" item do not constitute an endorsement by Sandia National Laboratories. DOE awards SSL SBIR grants…China to invest $44 million in SSL…NIST researchers make LEDs 7x brighter…DOE announces Round III funding opportunity August 7, 2006 Researchers from National Chiao Tung University in Taiwan have nearly tripled the front side luminance intensity of InGaN-GaN LEDs through "double" roughening both the p-GaN and undoped-GaN surfaces. The team increased the luminance intensities to 133 and 178 mcd for the front and back sides respectively, at 20 mA injection current. Research results were reported as "Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface," Wei Chih Peng and Yew Chung Sermon Wu, Applied Physics Letters, 89, 041116, July 24, 2006. [ News item at CompoundSemiconductor.net ]

142

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

143

Lighting Systems  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Purple LED lamp Purple LED lamp Lighting Systems Lighting research is aimed at improving the energy efficiency of lighting systems in buildings and homes across the nation. The goal is to reduce lighting energy consumption by 50% over twenty years by improving the efficiency of light sources, and controlling and delivering illumination so that it is available, where and when needed, and at the required intensity. Research falls into four main areas: Sources and Ballasts, Light Distribution Systems, Controls and Communications, and Human Factors. Contacts Francis Rubinstein FMRubinstein@lbl.gov (510) 486-4096 Links Lighting Research Group Batteries and Fuel Cells Buildings Energy Efficiency Applications Commercial Buildings Cool Roofs and Heat Islands Demand Response Energy Efficiency Program and Market Trends

144

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

145

Angle-tuned, evanescently-decoupled reflector for high-efficiency red light-emitting diode  

Science Journals Connector (OSTI)

We propose and demonstrate evanescently-decoupled, solid-angle-optimized distributed Bragg reflectors (DBRs) for AlGaInP light-emitting diodes (LEDs). The thickness of each DBR layer...

Kim, Sun-Kyung; Cho, Hyun K; Park, Kyung K; Jang, Junho; Lee, Jeong S; Park, Kyung W; Park, Youngho; Kim, Ju-Young; Lee, Yong-Hee

2008-01-01T23:59:59.000Z

146

Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography  

Science Journals Connector (OSTI)

SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate...

Byeon, Kyeong-Jae; Cho, Joong-Yeon; Kim, Jinseung; Park, Hyoungwon; Lee, Heon

2012-01-01T23:59:59.000Z

147

Direct LED writing of submicron resist patterns: Towards the fabrication of individually-addressable InGaN submicron stripe-shaped LED arrays  

Science Journals Connector (OSTI)

Submicron stripe-shaped InGaN light-emitting diode (LED) arrays with individually addressable capabilities are demonstrated ... the emission pattern, are formed by direct LED writing in a mask-free manner. The .....

Zheng Gong; Benoit Guilhabert; Zhitao Chen; Martin D. Dawson

2014-09-01T23:59:59.000Z

148

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

149

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto

1981-01-01T23:59:59.000Z

150

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network [OSTI]

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

151

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network [OSTI]

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

152

Lighting Renovations  

Broader source: Energy.gov [DOE]

When undertaking a lighting renovation in a Federal building, daylighting is the primary renewable energy opportunity. Photovoltaics (PV) also present an excellent opportunity. While this guide...

153

Cerenkov Light  

ScienceCinema (OSTI)

The bright blue glow from nuclear reactors is Cerenkov light. Karl Slifer describes how nuclear physicists can use this phenomenon to study the nucleus of the atom.

Slifer, Karl

2014-05-22T23:59:59.000Z

154

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

155

Heteroepitaxial growth and surface structure of L1{sub 0}-MnGa(111) ultra-thin films on GaN(0001)  

SciTech Connect (OSTI)

L1{sub 0}-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 2 reconstruction along with small patches of 1 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 2 and a Mn-rich 2 2 surface structure give the best agreement with the observed experimental images.

Mandru, Andrada-Oana; Wang, Kangkang; Cooper, Kevin; Ingram, David C.; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)] [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Garcia Diaz, Reyes; Takeuchi, Noboru [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States) [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autnoma de Mxico, Apartado Postal 14, Ensenada Baja California, Codigo Postal 22800 (Mexico); Haider, Muhammad [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States) [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran, 31261 (Saudi Arabia)

2013-10-14T23:59:59.000Z

156

Observation of the potential distribution in GaN-based devices by a scanning electron microscope  

Science Journals Connector (OSTI)

......potential. On the other hand, higher accelerating voltages resulted in blurred images. The second sample was a light emitting diode structure based on AlN where a multiple quantum well (MQW) structure was sandwiched by p- and n-AlGaN materials......

Takahiro Karumi; Shigeyasu Tanaka; Takayoshi Tanji

2014-11-01T23:59:59.000Z

157

VISIBLE AND INFRARED RARE-EARTH ACTIVATED ELECTROLUMINESCENCE FROM ERBIUM DOPED GaN  

E-Print Network [OSTI]

. At the same time novel work is being conducted using rare earth elements as sources of light emission. Results. III-V semiconductors doped with rare-earth elements have also been used10VISIBLE AND INFRARED RARE-EARTH ACTIVATED ELECTROLUMINESCENCE FROM ERBIUM DOPED GaN M. Garter*, R

Steckl, Andrew J.

158

Northern Lights  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Northern Lights Northern Lights Nature Bulletin No. 178-A February 6, 1965 Forest Preserve District of Cook County Seymour Simon, President Roland F. Eisenbeis, Supt. of Conservation NORTHERN LIGHTS To a person seeing the Aurora Borealis or "northern lights" for the first time, it is an uncanny awe-inspiring spectacle. Sometimes it begins as a glow of red on the northern horizon, ominously suggesting a great fire, gradually changing to a curtain of violet-white, or greenish-yellow light extending from east to west. Some times this may be transformed to appear as fold upon fold of luminous draperies that march majestically across the sky; sometimes as a vast multitude of gigantic flaming swords furiously slashing at the heavens; sometimes as a flowing crown with long undulating colored streamers fanning downward and outward.

159

Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN  

SciTech Connect (OSTI)

The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T{sub g}) and T{sub g} ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T{sub g} on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T{sub g} (800?C) GaN films grown under QB conditions were compared to deep level spectra of high T{sub g} (1150?C) GaN. Reducing T{sub g}, increased the defect density significantly (>50) through introduction of emergent deep level defects at 2.09?eV and 2.9?eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T{sub g} substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T{sub g} GaN growth to active layer growth can mitigate such non-radiative channels.

Armstrong, A. M., E-mail: aarmstr@sandia.gov [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Kelchner, K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)] [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Nakamura, S.; DenBaars, S. P. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States) [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)] [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2013-12-02T23:59:59.000Z

160

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
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161

Coulomb excitation of 73Ga  

E-Print Network [OSTI]

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekstrm; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Krll; R. Krcken; U. Kster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

162

Charakterisierung und Prparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network [OSTI]

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere (more)

Ebbers, Andr

2003-01-01T23:59:59.000Z

163

Contact Information Updated: June 17, 2014 Co. Comm/Sealer Address Telephone/Fax General County E-Mail/Office Hours  

E-Print Network [OSTI]

Contact Information Updated: June 17, 2014 Co. Comm/Sealer Address Telephone/Fax General County E-F: 8-5 El Centro, 92243-2850 Inyo/Mono County Srvs Bldg, 207 W South St (760) 873-7860 inyomonoag-6300 agcomm@co.kern.ca.us Ruben Arroyo Bakersfield, 93307-2857 (661) 868-6301 M-F: 8-5 Kings 680 N Campus

164

High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates  

SciTech Connect (OSTI)

Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop values are in line with the programs milestones. They demonstrate that bulk non-polar GaN substrates represent a disruptive technology for LED performance. Application of this technology to real-world products is feasible, provided that the cost of GaN substrates is compatible with the markets requirement.

David, Aurelien

2012-10-15T23:59:59.000Z

165

NANOSTRUCTURED HIGH PERFORMANCE ULTRAVIOLET AND BLUE LIGHT EMITTING DIODES FOR SOLID STATE LIGHTING  

SciTech Connect (OSTI)

We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the first 12 month contract period include (1) new means of synthesizing zero- and one-dimensional GaN nanostructures, (2) establishment of the building blocks for making GaN-based microcavity devices, and (3) demonstration of top-down approach to nano-scale photonic devices for enhanced spontaneous emission and light extraction. These include a demonstration of eight-fold enhancement of the external emission efficiency in new InGaN QW photonic crystal structures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

Arto V. Nurmikko; Jung Han

2004-10-01T23:59:59.000Z

166

Solid-State Lighting: LED Lighting Facts  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Market-Based Programs Printable Version Share this resource Send a link to Solid-State Lighting: LED Lighting Facts to someone by E-mail Share Solid-State Lighting: LED Lighting Facts on Facebook Tweet about Solid-State Lighting: LED Lighting Facts on Twitter Bookmark Solid-State Lighting: LED Lighting Facts on Google Bookmark Solid-State Lighting: LED Lighting Facts on Delicious Rank Solid-State Lighting: LED Lighting Facts on Digg Find More places to share Solid-State Lighting: LED Lighting Facts on AddThis.com... LED Lighting Facts CALiPER Program Standards Development Technical Information Network Gateway Demonstrations Municipal Consortium Design Competitions LED Lighting Facts LED lighting facts - A Program of the U.S. DOE DOE's LED Lighting Facts® program showcases LED products for general

167

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect (OSTI)

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

168

Abstract --This letter presents highly-polarized edge light emitting diodes with high-confinement, strained, multiple  

E-Print Network [OSTI]

power. We characterize InGaAsP MQW ELED devices with different lengths and optical confinement factors that transitions involving the HH band provide gain/absorption to TE polarized light and those involving the LH band provide gain/absorption mostly to TM polarized light, and to a lesser extent to TE light [7

Coldren, Larry A.

169

Light intensity and temperature regulate petiole elongation by controlling the content of and sensitivity to gibberellin in Cyclamen persicum  

Science Journals Connector (OSTI)

This study was carried out to investigate the responses of cyclamen to gibberellic acids (GAs) and GA biosynthesis inhibitors under different temperature and light intensity during different period, and then t...

Wook Oh; Ki Sun Kim

2014-06-01T23:59:59.000Z

170

Efficient vertical coupling of photodiodes to InGaAsP rib waveguides  

SciTech Connect (OSTI)

We demonstrate vertical integration of InGaAs mesa photodiodes with InGaAsP rib waveguides employing an intermediate optical impedance matching layer. The diode length necessary for 90% light absorption at 1.52 {mu}m wavelength was 42 {mu}m, a threefold reduction in diode length with respect to previous work employing similar waveguides without a matching layer. The quantum efficiency was observed to be almost independent of the optical wavelength and polarization. The influence of spatial transient intensity redistribution effects on these devices is investigated in detail.

Deri, R.J.; Doldissen, W.; Hawkins, R.J.; Bhat, R.; Soole, J.B.D.; Schiavone, L.M.; Seto, M.; Andreadakis, N.; Silberberg, Y.; Koza, M.A. (Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701-7040 (USA))

1991-06-17T23:59:59.000Z

171

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

172

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

173

Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse  

SciTech Connect (OSTI)

Abstract Compared with their bulk counterparts, atomically thin two-dimensional (2D) crystals exhibit new physical properties, and have the potential to enable next-generation electronic and optoelectronic devices. However, controlled synthesis of large uniform monolayer and multi-layer 2D crystals is still challenging. Here, we report the controlled synthesis of 2D GaSe crystals on SiO2/Si substrates using a vapor phase deposition method. For the first time, uniform, large (up to ~60 m in lateral size), single-crystalline, triangular monolayer GaSe crystals were obtained and their atomic resolution structure were characterized. The size, density, shape, thickness, and uniformity of the 2D GaSe crystals were shown to be controllable by growth duration, growth region, growth temperature, and argon carrier gas flow rate. The theoretical modeling of the electronic structure and Raman spectroscopy demonstrate a direct-to-indirect bandgap transition and progressive confinement-induced bandgap shifts for 2D GaSe crystals. The 2D GaSe crystals show p-type semiconductor characteristics and high photoresponsivity (~1.7 A/W under white light illumination) comparable to exfoliated GaSe nanosheets. These 2D GaSe crystals are potentially useful for next-generation electronic and optoelectronic devices such as photodetectors and field-effect transistors.

Li, Xufan [ORNL; Lin, Ming-Wei [ORNL; Zhang, Huidong [University of Tennessee, Knoxville (UTK); Puretzky, Alexander A [ORNL; Idrobo Tapia, Juan C [ORNL; Ma, Cheng [ORNL; Chi, Miaofang [ORNL; Yoon, Mina [ORNL; Rouleau, Christopher M [ORNL; Kravchenko, Ivan I [ORNL; Geohegan, David B [ORNL; Xiao, Kai [ORNL

2014-01-01T23:59:59.000Z

174

Light's twist  

Science Journals Connector (OSTI)

...Glasgow G12 8QQ, UK An invited Perspective to mark the election of Miles Padgett to the fellowship of the Royal Society in 2014. That...energy and momentum flow within light beams can twist to form vortices such as eddies in a stream. These...

2014-01-01T23:59:59.000Z

175

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays  

DOE Patents [OSTI]

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

Rogers, John A; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

2014-10-21T23:59:59.000Z

176

Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings  

Science Journals Connector (OSTI)

Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings ... Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. ...

Lee-Woon Jang; Dae-Woo Jeon; Tae-Hoon Chung; Alexander Y. Polyakov; Han-Su Cho; Jin-Hyeon Yun; Jin-Woo Ju; Jong-Hyeob Baek; Joo-Won Choi; In-Hwan Lee

2013-12-25T23:59:59.000Z

177

Solar Cells from Earth-Abundant Semiconductors with Plasmon-Enhanced Light Absorption  

SciTech Connect (OSTI)

Progress is reported in these areas: Plasmonic Light Trapping in Thin Film a-Si Solar Cells; Plasmonic Light Trapping in Thin InGaN Quantum Well Solar Cells; and Earth Abundant Cu{sub 2}O and Zn{sub 3}P{sub 2} Solar Cells.

Atwater, Harry

2012-04-30T23:59:59.000Z

178

Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.  

SciTech Connect (OSTI)

With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined using optical reflectance and the nucleation density was determined using atomic force microscopy (AFM) and Nomarski microscopy. Dislocation density was measured using X-ray diffraction and AFM after coating the surface with silicon nitride to delineate all dislocation types. The program milestone of producing GaN films with dislocation densities of 1 x 10{sup 8} cm{sup -2} was met by silicon nitride treatment of annealed sapphire followed by the multiple deposition of a low density of GaN nuclei followed by high temperature GaN growth. Details of this growth process and the underlying science are presented in this final report along with problems encountered in this research and recommendations for future work.

Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

2009-07-01T23:59:59.000Z

179

Optically-pumped UV Lasing from a GaN-based VCSEL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Optically-pumped UV Lasing from a GaN-based VCSEL Optically-pumped UV Lasing from a GaN-based VCSEL by J. Han, K. E. Waldrip, J. J. Figiel, S. R. Lee, and A. J. Fischer* Motivation-Compact ultraviolet sources are required for advanced chemical and biological sensors, high density optical storage, and as pump sources for phosphors used in solid-state white lighting. Although GaN-based edge- emitting lasers operating near 400 nm are available commercially, shorter wavelengths as well as other lasing geometries have remained a challenge. In particular, electrically-injected vertical-cavity surface-emitting lasers (VCSELs) have not been demonstrated in the III-Nitrides. VCSELs have unique advantages due to their low cost, compact size, and well- defined circular output beam. Optoelectronic sources based on UV VCSELS will be the

180

Electronic parameters and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs by metalorganic vapor phase epitaxy  

Science Journals Connector (OSTI)

We report a comprehensive study of the optical and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs substrates by metalorganic vapor phase epitaxy which allowed the determination of the electronic parameters appropriate for such quantum wells. High-resolution x-ray diffractometry studies indicate an excellent crystal quality and good periodicity for the multiquantum wells and provided their structural parameters accurately. The photoreflectance spectra exhibit all the allowed and almost all the weakly allowed optical transitions between the confined hole and electron states. From an analysis of the photoreflectance spectra it is shown that the quantum well interfaces have an abruptness better than 1 ML. Photoluminescence spectroscopy was also performed to evaluate independently the roughness of the interfaces and multiquantum well period reproducibility. For a 25-period multiquantum well structure with a well width of 55 , a photoluminescence linewidth of 12.5 meV, which corresponds to a combined well-width fluctuation and interface roughness of less than 1 monolayer over the 25 periods, proves the achievement of heterointerfaces with excellent interfacial quality. From a detailed analysis of the high-order transitions observed in the photoreflectance spectra we determined key quantum well electronic parameters, such as, the heavy-hole valence-band offset Qv=0.330.02, the transverse GaAs heavy-hole effective mass mhh=(0.950.02)m0, and the light-hole effective mass mlh=0.08m0 in ?111? directions, for ?111?-oriented GaAs/AlxGa1-xAs quantum well structures.

Soohaeng Cho; A. Sanz-Hervs; A. Majerfeld; B. W. Kim

2003-07-10T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Princeton Plasma Physics Lab - General Atomics (GA)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
182

EPARTMENT OF COMM NATIONALOCEA  

E-Print Network [OSTI]

T M E N T O F C O M M E R C E fact sheet | NOAA.gov (continued on next page) SEAFOOD & HUMAN HEALTH Seafood inspectors T he connection between seafood and health is undeniable, yet information available of Commerce, NOAA and NOAA's Fisheries Service have an obligation to help make information about seafood

183

EPARTMENT OF COMM NATIONALOCEA  

E-Print Network [OSTI]

to use aquaculture to become more self-sufficient in the production of seafood--also known as fish domestic supply to meet the nation's growing demand for seafood; · Establish aquaculture as a viable: · The United States will need an additional two million metric tons of seafood by 2025, even with wild caught

184

EPARTMENT OF COMM NATIONALOCEA  

E-Print Network [OSTI]

dangerous weather conditions, from hurricanes and tornadoes, to floods and snowstorms. Satellites also watch satellites it operates and sends the information to its key user ­ NOAA's National Weather Service. The National Weather Service uses this satellite data to help create weather and climate forecasts and models

185

Optical resonance modes in GaN pyramid microcavities  

SciTech Connect (OSTI)

An array of GaN hexagonal pyramids with a side length of 8.0 {mu}m was fabricated by selective epitaxial overgrowth. These microsized pyramids are highly efficient microcavities. Three types of optical resonance modes with mode spacings of 10, 5.0, and 6.0 {Angstrom} were observed when a single pyramid was pumped optically by an intense ultraviolet laser beam. An optical ray tracing method has been developed for calculating the optical resonance modes inside the pyramid microcavities. It was shown that a single pyramidal cavity can support several different types of optical resonance modes. The calculated mode spacing agrees very well with the observations. The uniqueness and advantages of this class of hexagonal pyramidal microcavities over the other microcavities are discussed. The implications of our finding on the future GaN microcavity light emitters including micro-light-emitting diodes, microcavity lasers, and vertical-cavity-surface emitting lasers are also discussed. {copyright} {ital 1999 American Institute of Physics.}

Jiang, H.X.; Lin, J.Y.; Zeng, K.C. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Yang, W. [Honeywell Technology Center, Plymouth, Minnesota 55441 (United States)] [Honeywell Technology Center, Plymouth, Minnesota 55441 (United States)

1999-08-01T23:59:59.000Z

186

Ultra-thin ohmic contacts for p-type nitride light emitting devices  

DOE Patents [OSTI]

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

2014-06-24T23:59:59.000Z

187

Texas Electric Lighting Report  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

electric lighting electric lighting The SNAP House's lighting design aims for elegant simplicity in concept, use, and maintenance. Throughout the house, soft, ambient light is juxtaposed with bright, direct task lighting. All ambient and most task lighting is integrated directly into the architectural design of the house. An accent light wall between the bedroom and bathroom provides a glowing light for nighttime navigation.

188

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

189

Phase transitions in C2O4H NH4 1/2H2O : a light scattering study of the high pressure phase  

E-Print Network [OSTI]

1711 Phase transitions in C2O4H NH4 1/2H2O : a light scattering study of the high pressure phase J) Résumé. 2014 AHO présente, à la pression ordinaire, une transition de phase ferroélastique du deuxième phase III soit, comme la phase II, due à une mise en ordre des ions ammoniums : leur orientation serait

Paris-Sud XI, Université de

190

Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

191

Bright Lights and Even Brighter Ideas | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Bright Lights and Even Brighter Ideas Bright Lights and Even Brighter Ideas Bright Lights and Even Brighter Ideas July 3, 2013 - 2:04pm Addthis Kim Kisslinger, a researcher at Brookhaven Lab's Center for Functional Nanomaterials seen here with a focused-ion beam instrument, reduced the indium gallium nitride (InGaN) samples to a thickness of just 20 nanometers to prepare them for electron microscopy. | Photo courtesy of Brookhaven National Laboratory. Kim Kisslinger, a researcher at Brookhaven Lab's Center for Functional Nanomaterials seen here with a focused-ion beam instrument, reduced the indium gallium nitride (InGaN) samples to a thickness of just 20 nanometers to prepare them for electron microscopy. | Photo courtesy of Brookhaven National Laboratory. Charles Rousseaux Charles Rousseaux

192

Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes  

Science Journals Connector (OSTI)

Crystalline gallium arsenide (c-GaAs) possesses many desirable optoelectronic properties suited for solar energy conversion,(1) light and radiation detection,(2) chemical sensing,(3) lighting,(4) and high speed electronics. ... In contrast to conflicting previous reports on the electrodeposition of GaAs,(17, 18) we posit that c-GaAs(s) can be synthesized predictably through the electrodeposition of As from dissolved As2O3 specifically on a Ga(l) electrode at modest temperatures in water. ... Specifically, for any binary system composed of a solid dissolving into a liquid, the rate of dissolution of the solid into the liquid phase is given by eq 5:(60)(5)where kdiss is the dissolution rate constant, s is the surface area of the solid in contact with the liquid, V is the volume of the liquid, Csat is the solubility of the solid in the liquid, and Cdiss is the concentration of the dissolved solid in the bulk of the liquid phase. ...

Eli Fahrenkrug; Junsi Gu; Stephen Maldonado

2012-12-24T23:59:59.000Z

193

Spectral hole burnings at high energy tails in spontaneous emission and hot carrier relaxation in InGaAsP lasers  

SciTech Connect (OSTI)

Spectral hole burnings in spontaneous emission spectra from 1.3 ..mu..m InGaAsP lasers were found. The results are understood on the basis of population burnings of holes associated with the saturation of intervalence-band absorption. Theoretical results on hot carrier relaxation are shown to explain the population burnings, pointing out an importance of nonequilibrium optical phonon populations in the active layers of long wavelength InGaAsP lasers and light emitting diodes (LED's).

Yamanishi, M.; Mikoshiba, N.; Nonomura, K.; Suemune, I.

1983-06-01T23:59:59.000Z

194

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

195

Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.  

SciTech Connect (OSTI)

The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was granted on this program, an additional more 'liquid-like' Sc precursor was evaluated and the nitridation of Sc metals on GaN were investigated. Using the Sc precursor, dopant level quantities of Sc were incorporated into GaN, thereby concluding the growth of ScGaN and YGaN films. Our remaining time during the no-cost extension was focused on pulsed laser deposition of Sc metal films on GaN, followed by nitridation in the MOCVD reactor to form ScN. Finally, GaN films were deposited on the ScN thin films in order to study possible GaN dislocation reduction.

Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

2009-07-01T23:59:59.000Z

196

PUBLISHED ONLINE: 17 OCTOBER 2010 | DOI: 10.1038/NMAT2879 Waterproof AlInGaP optoelectronics on  

E-Print Network [OSTI]

InGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics Rak-Hwan Kim1 , Dae opportunities for optoelectronic devices. A ll established forms of inorganic light-emitting diodes (LEDs restricting the ways in which these devices can be used. Research in organic optoelectronic materials

Rogers, John A.

197

Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same  

SciTech Connect (OSTI)

A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.

Tansu, Nelson; Gilchrist, James F; Ee, Yik-Khoon; Kumnorkaew, Pisist

2013-11-19T23:59:59.000Z

198

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

199

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

200

High-Efficiency Nitride-Based Photonic Crystal Light Sources  

Broader source: Energy.gov [DOE]

The University of California Santa Barbara (UCSB) is maximizing the efficiency of a white LED by enhancing the external quantum efficiency using photonic crystals to extract light that would normally be confined in a conventional structure. Ultimate efficiency can only be achieved by looking at the internal structure of light. To do this, UCSB is focusing on maximizing the light extraction efficiency and total light output from light engines driven by Gallium Nitride (GaN)-based LEDs. The challenge is to engineer large overlap (interaction) between modes and photonic crystals. The project is focused on achieving high extraction efficiency in LEDs, controlled directionality of emitted light, integrated design of vertical device structure, and nanoscale patterning of lateral structure.

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Lighting Test Facilities  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Custom Projects Lighting Test Facilities SSL Guidelines Industrial Federal Agriculture LED Street and Area Lighting Field Test of Exterior LED Down Lights Abstract Outdoor...

202

Light Water Reactor Sustainability  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4 Light Water Reactor Sustainability ACCOMPLISHMENTS REPORT 2014 Accomplishments Report | Light Water Reactor Sustainability 2 T he mission of the Light Water Reactor...

203

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

204

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

205

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

206

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

207

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

208

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect (OSTI)

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

209

Light Bodies: Exploring Interactions with Responsive Lights  

E-Print Network [OSTI]

reinterpretation of street lighting. Before fixed infrastructure illuminated cities at night, people carried Urban street lighting today is a networked, fixed infrastructure that relies on the electrical grid. WeLight Bodies: Exploring Interactions with Responsive Lights Susanne Seitinger MIT Media Laboratory

Hunt, Galen

210

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

211

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90 misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

212

Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Lighting Lighting Lighting When you're shopping for lightbulbs, compare lumens and use the Lighting Facts label to be sure you're getting the amount of light, or level of brightness, you want. You can save money and energy while lighting your home and still maintaining good light quantity and quality. Consider energy-efficient lighting options to use the same amount of light for less money. Learn strategies for comparing and buying lighting products and using them efficiently. Featured Lighting Choices to Save You Money Light your home for less money while using the same amount of light. How Energy-Efficient Light Bulbs Compare with Traditional Incandescents Energy-efficient light bulbs are available today and could save you about $50 per year in energy costs when you replace 15 traditional incandescent bulbs in your home.

213

The feasibility of high-efficiency InAs/GaAs quantum dot intermediate band solar cells  

Science Journals Connector (OSTI)

Abstract In recent years, all the operating principles of intermediate band behaviour have been demonstrated in InAs/GaAs quantum dot (QD) solar cells. Having passed this hurdle, a new stage of research is underway, whose goal is to deliver QD solar cells with efficiencies above those of state-of-the-art single-gap devices. In this work, we demonstrate that this is possible, using the present InAs/GaAs QD system, if the \\{QDs\\} are made to be radiatively dominated, and if absorption enhancements are achieved by a combination of increasing the number of \\{QDs\\} and light trapping. A quantitative prediction is also made of the absorption enhancements required, suggesting that a 30 fold increase in the number of \\{QDs\\} and a light trapping enhancement of 10 are sufficient. Finally, insight is given into the relative merits of absorption enhancement via increasing QD numbers and via light trapping.

A. Mellor; A. Luque; I. Tobas; A. Mart

2014-01-01T23:59:59.000Z

214

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

215

Transformations in Lighting: The Fifth Annual Solid-State Lighting R&D Workshop  

Broader source: Energy.gov [DOE]

More than 300 SSL technology leaders from industry, research organizations, universities, and national laboratories gathered in Atlanta, GA, along with representatives from efficiency programs, utilities, and the lighting design community to participate in the DOE SSL R&D Workshop on January 29-31, 2008. DOE SSL Program Manager James Brodrick kicked off the workshop by highlighting recent signs of the progress and pace of SSL advances: the New Year's Eve debut of the new Times Square Ball, lit with Philips Luxeon LEDs; the first DOE Gateway demonstration of Beta LED streetlights in Oakland, CA; and the LR6 downlight from LED Lighting Fixtures, Inc., Grand Prize Winner in the 2007 Lighting for Tomorrow competition.

216

Architectural Lighting Analysis in Virtual Lighting Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Architectural Lighting Analysis in Virtual Lighting Laboratory Architectural Lighting Analysis in Virtual Lighting Laboratory Speaker(s): Mehlika Inanici Date: July 7, 2003 - 12:00pm Location: Bldg. 90 Seminar Host/Point of Contact: Satkartar K. Kinney Virtual Lighting Laboratory is a Radiance-based lighting analysis tool and methodology that proposes transformations in the utilization of computer visualization in lighting analysis and design decision-making. It is a computer environment, where the user has been provided with matrices of illuminance and luminance values extracted from high dynamic range images. The principal idea is to provide the laboratory to the designer and researcher to explore various lighting analysis techniques instead of imposing limited number of predetermined metrics. In addition, it introduces an analysis approach for temporal and spatial lighting

217

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network [OSTI]

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

218

Light sources based on semiconductor current filaments  

DOE Patents [OSTI]

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Buttram, Malcolm T. (Sandia Park, NM); Mar, Alan (Albuquerque, NM); Helgeson, Wesley D. (Albuquerque, NM); O'Malley, Martin W. (Edgewood, NM); Hjalmarson, Harold P. (Albuquerque, NM); Baca, Albert G. (Albuquerque, NM); Chow, Weng W. (Cedar Crest, NM); Vawter, G. Allen (Albuquerque, NM)

2003-01-01T23:59:59.000Z

219

Ab initio study on noncompensated CrO codoping of GaN for enhanced solar energy conversion  

SciTech Connect (OSTI)

We describe a novel photocatalyst obtained by codoping GaN with CrO, according to a new "noncompensated" codoping concept based on first-principles calculations. The approach enables controllable narrowing of the GaN band gap with significantly enhanced carrier mobility and photocatalytic activity in the visible light region and thus offers immense potential for application in solar energy conversion, water splitting, and a variety of solar-assisted photocatalysis. Our calculations indicate that the formation energy for the cation doping is greatly reduced by noncompensated codoping with an anion. Although Cr doping alone can split the band gap with the formation of an intermediate band, the mobility is low due to carrier trapping by the localized states. The first-principles calculations also demonstrate that CrO codoping of GaN shifts the Fermi level into the conduction band resulting in high carrier density and mobility.

Pan, Hui [ORNL; Gu, Baohua [ORNL; Eres, Gyula [ORNL; Zhang, Zhenyu [ORNL

2010-03-01T23:59:59.000Z

220

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

222

Mobile lighting apparatus  

DOE Patents [OSTI]

A mobile lighting apparatus includes a portable frame such as a moveable trailer or skid having a light tower thereon. The light tower is moveable from a stowed position to a deployed position. A hydrogen-powered fuel cell is located on the portable frame to provide electrical power to an array of the energy efficient lights located on the light tower.

Roe, George Michael; Klebanoff, Leonard Elliott; Rea, Gerald W; Drake, Robert A; Johnson, Terry A; Wingert, Steven John; Damberger, Thomas A; Skradski, Thomas J; Radley, Christopher James; Oros, James M; Schuttinger, Paul G; Grupp, David J; Prey, Stephen Carl

2013-05-14T23:59:59.000Z

223

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

224

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

225

Light Old and New  

Science Journals Connector (OSTI)

The Sun, Moon and stars have been our lights since the earliest times. We have learned ... have much more recently filled our homes and streets with artificial lighting. We are, however, in danger of...natural lights

Bob Mizon

2002-01-01T23:59:59.000Z

226

Specific light in sculpture  

E-Print Network [OSTI]

Specific light is defined as light from artificial or altered natural sources. The use and manipulation of light in three dimensional sculptural work is discussed in an historic and contemporary context. The author's work ...

Powell, John William

1989-01-01T23:59:59.000Z

227

Lighting | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

to installing LEDs in existing fixtures. Tips and Advice Tips: Lighting Lighting choices save you money. Energy-efficient light bulbs are available in a wide variety of sizes...

228

Natural lighting and skylights  

E-Print Network [OSTI]

There are many physiological and psychological factors which enter into the proper design of space for human occupancy. One of these elements is light. Both natural light and manufactured light are basic tools with which any designer must work...

Evans, Benjamin Hampton

1961-01-01T23:59:59.000Z

229

Parametric light generation  

Science Journals Connector (OSTI)

...potential to deliver coherent light with high spectral purity...universal constants such as the speed of light. Single- frequency CW...assessment of optical switching speeds in telecommunication technology...A (2003) Parametric light generation 2749 ment of...

2003-01-01T23:59:59.000Z

230

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes  

SciTech Connect (OSTI)

The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantum efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.

Wang, Xiaodong; Pan, Ming; Hou, Liwei; Xie, Wei [No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Xu, Jintong; Li, Xiangyang; Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai (China)

2014-01-07T23:59:59.000Z

231

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

232

Lighting Group: Links  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Links Links Links Organizations Illuminating Engineering Society of North America (IESNA) International Commission on Illumination (CIE) International Association of Lighting Designers (IALD) International Association of Energy-Efficient Lighting Lightfair International Energy Agency - Task 21: Daylight in Buildings: Design Tools and Performance Analysis International Energy Agency - Task 31: Daylighting Buildings in 21st Century National Association on Qualifications for the Lighting Professions (NCQLP) National Association of Independent Lighting Distributors (NAILD) International Association of Lighting Management Companies (NALMCO) Research Centers California Lighting Technology Center Lighting Research Center Lighting Research at Canada Institute for Research in Construction

233

Advanced Demand Responsive Lighting  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Demand Demand Responsive Lighting Host: Francis Rubinstein Demand Response Research Center Technical Advisory Group Meeting August 31, 2007 10:30 AM - Noon Meeting Agenda * Introductions (10 minutes) * Main Presentation (~ 1 hour) * Questions, comments from panel (15 minutes) Project History * Lighting Scoping Study (completed January 2007) - Identified potential for energy and demand savings using demand responsive lighting systems - Importance of dimming - New wireless controls technologies * Advanced Demand Responsive Lighting (commenced March 2007) Objectives * Provide up-to-date information on the reliability, predictability of dimmable lighting as a demand resource under realistic operating load conditions * Identify potential negative impacts of DR lighting on lighting quality Potential of Demand Responsive Lighting Control

234

Modeling LED street lighting  

Science Journals Connector (OSTI)

LED luminaires may deliver precise illumination patterns to control light pollution, comfort, visibility, and light utilization efficiency. Here, we provide simple equations to...

Moreno, Ivan; Avendao-Alejo, Maximino; Saucedo-A, Tonatiuh; Bugarin, Alejandra

2014-01-01T23:59:59.000Z

235

Lighting | Open Energy Information  

Open Energy Info (EERE)

TODO: Add description List of Lighting Incentives Retrieved from "http:en.openei.orgwindex.php?titleLighting&oldid267174" Category: Articles with outstanding TODO tasks...

236

Cree LED Lighting Solutions Formerly LED Lighting Fixtures LLF...  

Open Energy Info (EERE)

LED Lighting Solutions Formerly LED Lighting Fixtures LLF Jump to: navigation, search Name: Cree LED Lighting Solutions (Formerly LED Lighting Fixtures (LLF)) Place: Morrisville,...

237

Light Duty Combustion Research: Advanced Light-Duty Combustion...  

Broader source: Energy.gov (indexed) [DOE]

Light Duty Combustion Research: Advanced Light-Duty Combustion Experiments Light Duty Combustion Research: Advanced Light-Duty Combustion Experiments 2009 DOE Hydrogen Program and...

238

High?quality focused?ion?beam?made mirrors for InGaP/InGaAlP visible?laser diodes  

Science Journals Connector (OSTI)

We employed a focused ion beam(FIB) to sputter the end mirrors on InGaP/InGaAlP laser diodes. This particular diode operates at a wavelength of about 670 nm. For this wavelength the quality of the sputteredmirrors is far more critical than for longer wavelength devices. The present lasers do in fact show a relatively large increase in their threshold current after FIBmicromachining. In this article we investigate the origins of this increase and how to prevent it. After optimization the lasers with a FIB?made end mirror have a threshold current comparable to that of cleaved?facet devices. We have seen that the polycrystalline structure of the device metallization on top of the laser diode causes roughening of the mirror during sputtering which results in severe scatter losses of the laser light. A method to decrease the surface roughness is given. A further reason for the increase in threshold current is optical absorption at the mirror presumably by a Ga?rich layer. This can be circumvented by chemical etching after FIB treatment to remove the absorbing layer. Finally to demonstrate the quality and the applicability of the FIB?made mirrors the influence of the tilt angle of the end mirror on the threshold current of the laser has been investigated. This dependency can be excellently described by theory.

M. H. F. Overwijk; J. A. de Poorter

1993-01-01T23:59:59.000Z

239

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

240

GA-AL-SC | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

242

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

243

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

244

Nano-photonic Light Trapping In Thin Film Solar Dennis M. Callahan Jr.  

E-Print Network [OSTI]

Nano-photonic Light Trapping In Thin Film Solar Cells Thesis by Dennis M. Callahan Jr. In Partial. Jeremy Munday for helping me get started on the thin-film GaAs project and for all the time we spent to thank Dr. Jonathan Grandidier for working closely with me for a couple years on the nano sphere solar

Winfree, Erik

245

Nanoparticle-induced light scattering for improved performance of quantum-well solar cells  

E-Print Network [OSTI]

performance of InP/InGaAsP quantum-well waveguide solar cells via light scattering from deposited dielectric of quantum wells to ensure high photon absorption efficiency and increased short-circuit current den- sity homojunction device by extending the absorption spectrum to longer wavelengths.6,7 We show here that nor- mally

Yu, Edward T.

246

High-Efficiency Non-Polar GaN-Based LEDs  

SciTech Connect (OSTI)

Inlustra Technologies with subcontractor U.C. Santa Barbara conducted a project with the principle goal of demonstrating high internal quantum efficiency blue (430 nm) and green (540nm) light emitting diodes (LEDs) on low-defect density non-polar GaN wafers. Inlustra pursued the fabrication of smooth thick a-plane and m-plane GaN films, as well as defect reduction techniques such as lateral epitaxial overgrowth (LEO) to uniformly lower dislocation density in these films. Limited free-standing wafers were produced as well. By the end of the reporting period, Inlustra had met its milestone of dislocation reduction to < 5 x 10{sup 6} cm{sup -2}. Stacking faults were still present in appreciable density ({approx} 1 x 10{sup 5} cm{sup -1}), but were not the primary focus of defect reduction since there have been no published studies establishing their detrimental effects on LED performance. Inlustra's LEO progress built a solid foundation upon which further commercial development of GaN substrates will occur. UCSB encountered multiple delays in its LED growth and fabrication efforts due to unavoidable facilities outages imposed by ongoing construction in an area adjacent to the metalorganic chemical vapor deposition (MOCVD) laboratory. This, combined with the large amount of ab initio optimization required for the MOCVD system used during the project, resulted in unsatisfactory LED progress. Although numerous blue-green photoluminescence results were obtained, only a few LED structures exhibited electroluminescence at appreciable levels. UCSB also conducting extensive modeling (led by Prof. Van de Walle) on the problem of non-radiative Auger recombination in GaN-based LED structures, which has been posited to contribute to LED efficiency 'droop' at elevated current density. Unlike previous modeling efforts, UCSB's approach was truly a first-principles ab initio methodology. Building on solid numerical foundations, the Auger recombination rates of In{sub x}Ga{sub 1-x}N alloys were calculated from first-principles density-functional and many-body-perturbation theory. The differing mechanisms of inter- and intra-band recombination were found to affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient was calculated to be as large as 2 x 10{sup -30} cm{sup 6} s{sup -1}; in the infrared it is even larger. These results indicated that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters, whether on non-polar or polar crystal planes.

Paul Fini

2010-11-30T23:59:59.000Z

247

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

248

Fractal quantum well heterostructures for broadband light emitters  

SciTech Connect (OSTI)

We examine carrier relaxation and radiative recombination in AlGaAs based near IR and AlGaInP based visible fractal quantum well heterostructures. Through temperature dependent photoluminescence, we demonstrate that enhanced population of higher lying energy levels can be achieved by varying the thickness of the layers in the fractal heterostructurd. This distribution of carriers results in room temperature emission over a relatively broad range of wavelengths: approximately 700--855 nm for AlGaAs structures and 575--650 nm for AlGaInP structures. Spectra are compared to theoretical calculations to evaluate the non-equilibrium nature of the carrier distributions. Time resolved photoluminescence measurements demonstrate an approximately linear relationship between the radiative decay time and the layer thickness of the structure. Correspondingly, integrated luminescence measurements at room temperature reveal a factor of four increase in the light output efficiency of the structure as the fractal layer thickness is increased from 50 {angstrom} to 400 {angstrom}. The applicability of these heterostructures to broadband LEDs is discussed.

Crawford, M.H.; Gourley, P.L.; Meissner, K.E.; Sinclair, M.B.; Jones, E.D.; Chow, W.W.; Schneider, R.P. Jr.

1994-12-31T23:59:59.000Z

249

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

250

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmauntersttzter Molekularstrahlepitaxie (MBE). Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, und (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

251

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (15) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

252

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect (OSTI)

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

253

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

254

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

255

DOE Kicks Off National "Change a Light, Change the World" Campaign |  

Broader source: Energy.gov (indexed) [DOE]

Kicks Off National "Change a Light, Change the World" Campaign Kicks Off National "Change a Light, Change the World" Campaign DOE Kicks Off National "Change a Light, Change the World" Campaign October 3, 2006 - 9:08am Addthis ATLANTA, GA - U.S. Department of Energy (DOE) Assistant Secretary for Policy and International Affairs Karen A. Harbert today joined Georgia Power President and CEO Mike Garrett to kick off the seventh annual ENERGY STAR ® National "Change a Light, Change the World" campaign at Georgia Power headquarters. The "Change a Light" campaign is a national call-to-action by the U.S. Environmental Protection Agency (EPA) and DOE encouraging all Americans to help change the world, one light - one energy-saving step - at a time. The "Change a Light" campaign runs from

256

Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study  

SciTech Connect (OSTI)

We report the fabrication of a thin film InAs/GaAs quantum dot solar cell (QD cell) by applying epitaxial lift-off (ELO) approach to the GaAs substrate. We confirmed significant current collection enhancement (?0.91?mA/cm{sup 2}) in the ELO-InAs QD cell within the wavelength range of 700?nm900?nm when compared to the ELO-GaAs control cell. This is almost six times of the sub-GaAs bandgap current collection (?0.16?mA/cm{sup 2}) from the wavelength range of 900?nm and beyond, we also confirmed the ELO induced resonance cavity effect was able to increase the solar cell efficiency by increasing both the short circuit current and open voltage. The electric field intensity of the resonance cavity formed in the ELO film between the Au back reflector and the GaAs front contact layer was analyzed in detail by finite-differential time-domain (FDTD) simulation. We found that the calculated current collection enhancement within the wavelength range of 700?nm900?nm was strongly influenced by the size and shape of InAs QD. In addition, we performed concentrated light photovoltaic study and analyzed the effect of intermediate states on the open voltage under varied concentrated light intensity for the ELO-InAs QD cell.

Sogabe, Tomah, E-mail: sogabe@mbe.rcast.u-tokyo.ac.jp; Shoji, Yasushi; Tamayo, Efrain; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504 (Japan); Mulder, Peter; Schermer, John [Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen (Netherlands)

2014-09-15T23:59:59.000Z

257

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

258

Implantation of carbon in GaAs  

SciTech Connect (OSTI)

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

259

O?[]O? nuclear ?-decay of ?Ga  

E-Print Network [OSTI]

The branching ratio for the ?-Decay of ?Ga to the first excited O? state in ?Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

260

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16 from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
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261

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect (OSTI)

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

262

Spectrally Enhanced Lighting  

Broader source: Energy.gov (indexed) [DOE]

November 2007 November 2007 AfterImage + s p a c e 1 Spectrally Enhanced Lighting Spectrally Enhanced Lighting Brian Liebel, PE, LC Brian Liebel, PE, LC November 29, 2007 November 29, 2007 Federal Utilities Partnership Working Group Federal Utilities Partnership Working Group November 29, 2007 November 29, 2007 29 November 2007 AfterImage + s p a c e 2 Spectrally Enhanced Lighting Spectrally Enhanced Lighting Spectrally Enhanced Lighting Spectrally Enhanced Lighting This is not a technology; just a This is not a technology; just a different way to quantify light based on different way to quantify light based on well established scientific findings well established scientific findings Can be used in conjunction with ANY Can be used in conjunction with ANY type of lighting design to gain

263

The performance of double active region InGaAsP lasers  

SciTech Connect (OSTI)

In this paper the light-current characteristic and temperature behavior of the double-carrier-confinement (DCC) InGaAsP laser are shown largely to be determined by auger recombination. The carrier distributions in the two active regions, especially their relative fractions, play a major role in device behavior. A self-consistent, comprehensive numerical laser model is used to analyze a set of devices showing that superlinearity and possibly bistability are due to saturable absorption in the second active region and that a high characteristic temperature is usually tied with a higher threshold current density because of substantial Auger recombination rates in this type of device.

Champagne, A.; Maciejko, R. (Dept. of Engineering Physics, Ecole Polytechnique, Montreal, Quebec H3C 3A7 (CA)); Glinski, J.M. (Bell-Northern Research, Nepean, Ontario K1Y 4H7 (CA))

1991-10-01T23:59:59.000Z

264

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

265

Le travail comme capacit : de la subordination la libert ?1 Sen met au centre de sa conception du dveloppement, l'institution d'un "libre march de l'emploi", par  

E-Print Network [OSTI]

capacité repose en premier lieu, dans l'analyse d'Amartya Sen, sur la liberté réelle de choix en se1 Le travail comme « capacité » : de la subordination à la liberté ?1 Résumé : Sen met au centre de conception du « libre marché de l'emploi » dans la réflexion de Sen, à partir de sa conception du

Paris-Sud XI, Université de

266

Composition dependent valence band order in c-oriented wurtzite AlGaN layers  

SciTech Connect (OSTI)

The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k?p theory yields a critical relative aluminum concentration x{sub c}=(0.090.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with ?{sub 9} symmetry of b{sub ?{sub 9}}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=?0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

Neuschl, B., E-mail: benjamin.neuschl@uni-ulm.de; Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K. [Institute of Quantum Matter / Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm (Germany); Meisch, T.; Forghani, K.; Scholz, F. [Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm (Germany); Feneberg, M. [Institut fr Experimentelle Physik, Otto-von-Guericke-Universitt Magdeburg, Universittsplatz 2, 39106 Magdeburg (Germany)

2014-09-21T23:59:59.000Z

267

Solid-State Lighting: Solid-State Lighting  

Broader source: Energy.gov (indexed) [DOE]

Solid-State Lighting Search Solid-State Lighting Search Search Help Solid-State Lighting HOME ABOUT THE PROGRAM R&D PROJECTS MARKET-BASED PROGRAMS SSL BASICS INFORMATION RESOURCES FINANCIAL OPPORTUNITIES EERE » Building Technologies Office » Solid-State Lighting Printable Version Share this resource Send a link to Solid-State Lighting: Solid-State Lighting to someone by E-mail Share Solid-State Lighting: Solid-State Lighting on Facebook Tweet about Solid-State Lighting: Solid-State Lighting on Twitter Bookmark Solid-State Lighting: Solid-State Lighting on Google Bookmark Solid-State Lighting: Solid-State Lighting on Delicious Rank Solid-State Lighting: Solid-State Lighting on Digg Find More places to share Solid-State Lighting: Solid-State Lighting on AddThis.com... Pause/Resume Photo of a large room with people standing around poster boards.

268

Lighting Group: Overview  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Overview Overview Overview of the Lighting Research Group The Lighting Research Group at Lawrence Berkeley National Laboratory performs research aimed at improving the energy efficiency of lighting systems in buildings and homes, throughout the State of California and across the Nation. The goal is to reduce lighting energy consumption by 50% over twenty years by improving the efficiency of light sources, and controlling and delivering illumination so that it is available, where and when needed, and at the required intensity. Research in the Lighting Group falls into three main areas: Sources and Ballasts, Light Distribution Systems and Controls and Communications. Click on a link below for more information about each of these research areas. Sources and Ballasts investigates next generation light sources, such as

269

Smart street lighting management  

Science Journals Connector (OSTI)

In this work, we propose a new street lighting energy management system in order to reduce ... demand meaning that energy, in this case light, is provided only when needed. In ... demand model, which in the case...

S. Pizzuti; M. Annunziato; F. Moretti

2013-08-01T23:59:59.000Z

270

Adaptive Street Lighting Controls  

Broader source: Energy.gov [DOE]

This two-partDOE Municipal Solid-State Street Lighting Consortium webinar focused on LED street lighting equipped with adaptive control components. In Part I, presenters Amy Olay of the City of...

271

Kyler Nelson Light Timer  

E-Print Network [OSTI]

designated by the user, the Arduino board will dim the light to save energy. The user designates the time instance, the light is dimmed using pulse width modulation (PWM) in the Arduino's pin number 11

Kachroo, Pushkin

272

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network [OSTI]

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

273

Street light holography  

Science Journals Connector (OSTI)

The production of a hologram is demonstrated using only a camera aluminum foil and a mercury vapor street light.

R. R. Turtle

1977-01-01T23:59:59.000Z

274

Outdoor Lighting Resources  

Broader source: Energy.gov [DOE]

DOE offers a variety of resources to guide municipalities, utilities, and others in their evaluation of LED street lighting products.

275

Light emitting device comprising phosphorescent materials for white light generation  

DOE Patents [OSTI]

The present invention relates to phosphors for energy downconversion of high energy light to generate a broadband light spectrum, which emit light of different emission wavelengths.

Thompson, Mark E.; Dapkus, P. Daniel

2014-07-22T23:59:59.000Z

276

Resonant energy transfer in light harvesting and light emitting applications.  

E-Print Network [OSTI]

??The performance of light emitting and light harvesting devices is improved by utilising resonant energy transfer. In lighting applications, the emission energy of a semiconductor (more)

Chanyawadee, Soontorn

2009-01-01T23:59:59.000Z

277

Solid-State Lighting: Solid-State Lighting Videos  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid-State Lighting Videos to Solid-State Lighting Videos to someone by E-mail Share Solid-State Lighting: Solid-State Lighting Videos on Facebook Tweet about Solid-State Lighting: Solid-State Lighting Videos on Twitter Bookmark Solid-State Lighting: Solid-State Lighting Videos on Google Bookmark Solid-State Lighting: Solid-State Lighting Videos on Delicious Rank Solid-State Lighting: Solid-State Lighting Videos on Digg Find More places to share Solid-State Lighting: Solid-State Lighting Videos on AddThis.com... Conferences & Meetings Presentations Publications Webcasts Videos Tools Solid-State Lighting Videos On this page you can access DOE Solid-State Lighting (SSL) Program videos. Photo of a museum art gallery with LED lights in track fixtures overhead. The City of Los Angeles LED Streetlight Program

278

Solid-State Lighting: Solid-State Lighting  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Lighting Lighting Printable Version Share this resource Send a link to Solid-State Lighting: Solid-State Lighting to someone by E-mail Share Solid-State Lighting: Solid-State Lighting on Facebook Tweet about Solid-State Lighting: Solid-State Lighting on Twitter Bookmark Solid-State Lighting: Solid-State Lighting on Google Bookmark Solid-State Lighting: Solid-State Lighting on Delicious Rank Solid-State Lighting: Solid-State Lighting on Digg Find More places to share Solid-State Lighting: Solid-State Lighting on AddThis.com... Pause/Resume Photo of a large room with people standing around poster boards. Register Now for DOE's 11th Annual SSL R&D Workshop January 28-30, join other SSL R&D professionals from industry, government, and academia to learn, share, and shape the future of lighting.

279

Solid-State Lighting: Solid-State Lighting Contacts  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

About the About the Program Printable Version Share this resource Send a link to Solid-State Lighting: Solid-State Lighting Contacts to someone by E-mail Share Solid-State Lighting: Solid-State Lighting Contacts on Facebook Tweet about Solid-State Lighting: Solid-State Lighting Contacts on Twitter Bookmark Solid-State Lighting: Solid-State Lighting Contacts on Google Bookmark Solid-State Lighting: Solid-State Lighting Contacts on Delicious Rank Solid-State Lighting: Solid-State Lighting Contacts on Digg Find More places to share Solid-State Lighting: Solid-State Lighting Contacts on AddThis.com... Contacts Partnerships Solid-State Lighting Contacts For information about Solid-State Lighting, contact James Brodrick Lighting Program Manager Building Technologies Office U.S. Department of Energy

280

Solid-State Lighting: Adaptive Street Lighting Controls  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Adaptive Street Lighting Adaptive Street Lighting Controls to someone by E-mail Share Solid-State Lighting: Adaptive Street Lighting Controls on Facebook Tweet about Solid-State Lighting: Adaptive Street Lighting Controls on Twitter Bookmark Solid-State Lighting: Adaptive Street Lighting Controls on Google Bookmark Solid-State Lighting: Adaptive Street Lighting Controls on Delicious Rank Solid-State Lighting: Adaptive Street Lighting Controls on Digg Find More places to share Solid-State Lighting: Adaptive Street Lighting Controls on AddThis.com... Conferences & Meetings Presentations Publications Webcasts Videos Tools Adaptive Street Lighting Controls This two-part DOE Municipal Solid-State Street Lighting Consortium webinar focused on LED street lighting equipped with adaptive control components.

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

282

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

283

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network [OSTI]

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

284

Kohlenstoffhaltige ternre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternren Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner drften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

285

Control of light speed: From slow light to superluminal light  

E-Print Network [OSTI]

A scheme for controlling light speed from slower-than-c to faster-than-c in an atomic system is presented in this paper. The scheme is based on far detuning Raman effect. Two far detuning coupling fields with small frequency difference will produce two absorptive peaks for the probe field in a $\\Lambda$ structure, and an optical pump between the two ground states can change the absorptive peaks into enhanced peaks, which makes the normal dispersion between the two peaks change into anomalous dispersion, so the probe field can change from slow light to superluminal propagation.

Qun-Feng Chen; Yong-Sheng Zhang; Bao-Sen Shi; Guang-Can Guo

2008-07-01T23:59:59.000Z

286

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System  

SciTech Connect (OSTI)

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.

Abernathy, C.R.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

1998-11-04T23:59:59.000Z

287

Phosphor-free nanopyramid white light-emitting diodes grown on (101{sup }1) planes using nanospherical-lens photolithography  

SciTech Connect (OSTI)

We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO{sub 2} mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the (101{sup }1) planes towards the substrate and the perpendicular direction to the (101{sup }1) planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires.

Wu, Kui [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China) [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084 (China); Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wei, Xuecheng; Zheng, Haiyang; Chen, Yu; Lu, Hongxi; Wang, Junxi; Li, Jinmin [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Lan, Ding [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080 (China)] [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080 (China); Huang, Kai [Platform of Characterization and Test, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215000 (China)] [Platform of Characterization and Test, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215000 (China); Luo, Yi [Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084 (China)] [Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084 (China)

2013-12-09T23:59:59.000Z

288

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect (OSTI)

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

289

Emerging Lighting Technology  

Broader source: Energy.gov (indexed) [DOE]

Emerging Lighting Technology Emerging Lighting Technology Bruce Kinzey Pacific Northwest National Laboratory FUPWG - Portland, OR April 20, 2011 www.ssl.energy.gov 2 | Solid-State Lighting Program GATEWAY Demonstration Program * Purpose: demonstrate new SSL products in real-world applications that save energy, match or improve illumination, and are cost- effective * Demos generate critical field experience providing: - Feedback to manufacturers - Data for utility incentives - Market readiness of specific applications to users - Advancement in lighting knowledge Central Park, NY Photo: Ryan Pyle Smithsonian American Art Museum, Washington, D.C. Photo: Scott Rosenfeld www.ssl.energy.gov 3 | Solid-State Lighting Program LED Product Explosion www.ssl.energy.gov 4 | Solid-State Lighting Program LEDs are Not a Universal Lighting

290

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

291

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect (OSTI)

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

292

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

293

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

294

Measurement of electron beam polarization from unstrained GaAs via two-photon photoemission  

SciTech Connect (OSTI)

Two-photon absorption of 1560 nm light was used to generate polarized electron beams from unstrained GaAs photocathodes of varying thickness: 625 {mu}m, 0.32 {mu}m, and 0.18 {mu}m. For each photocathode, the degree of spin polarization of the photoemitted beam was less than 50%, contradicting earlier predictions based on simple quantum mechanical selection rules for spherically-symmetric systems but consistent with the more sophisticated model of Bhat et al. (Phys. Rev. B 71 (2005) 035209). Polarization via two-photon absorption was the highest from the thinnest photocathode sample and comparable to that obtained via one-photon absorption (using 778 nm light), with values 40.3 +- 1.0% and 42.6 +- 1.0%, respectively.

McCarter, James L. [Univ. of Virginia, Charlottesville, VA (United States); Afanasev, A. [George Washington Univ., Washingon, DC (United States); Gay, T. J. [Univ. of Nebraska, Lincoln, NE (United States); Hansknecht, John C. [JLAB, Newport News, VA (United States); Kechiantz, A. [George Washington Univ., Washingon, DC (United States); Poelker, B. Matthew [JLAB, Newport News, VA (United States)

2014-02-01T23:59:59.000Z

295

Fano Resonance in GaAs 2D Photonic Crystal Nanocavities  

SciTech Connect (OSTI)

We report the results of polarization resolved reflectivity experiments in GaAs air-bridge photonic crystals with L3 cavities. We show that the fundamental L3 cavity mode changes, in a controlled way, from a Lorentzian symmetrical lineshape to an asymmetrical form when the linear polarization of the incident light is rotated in the plane of the crystal. The different lineshapes are well fitted by the Fano asymmetric equation, implying that a Fano resonance is present in the reflectivity. We use the scattering matrix method to model the Fano interference between a localized discrete state (the cavity fundamental mode) and a background of continuum states (the light reflected from the crystal slab in the vicinity of the cavity) with very good agreement with the experimental data.

Valentim, P. T.; Guimaraes, P.S. S. [Departamento de Fisica, Universidade Federal de Minas Gerais, Belo Horizonte (Brazil); Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos Semicondutores - INCT-DISSE (Brazil); Luxmoore, I. J.; Szymanski, D.; Whittaker, D. M.; Fox, A. M.; Skolnick, M. S. [Department of Physics and Astronomy, University of Sheffield, Sheffield (United Kingdom); Vasco, J. P. [Instituto de Fisica, Universidad de Antioquia, Medellin (Colombia); Vinck-Posada, H. [Departamento de Fisica, Facultad de Ciencias, Universidad Nacional de Colombia, Bogota (Colombia)

2011-12-23T23:59:59.000Z

296

SMART LIGHTING SYSTEMS ULTIMATE LIGHTING The Smart Lighting  

E-Print Network [OSTI]

Integration (Holistic Integrated Design) · Sensors as important as LEDs · Interconnected systems (human, building, grid) · Artistic Design Freedom · Lighting is Health, Entertainment, Information and Illumination Cost at any brightness · Chip level integrated electronics THE ERC RESEARCH COVERS THE ENTIRE SUPPLY

Linhardt, Robert J.

297

Solid-State Lighting Issue 15: Selected Business & Technology News  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

9/2002 9/2002 | Table of Contents | Abstracts | Credit and Disclaimer | ISSUE 15: BUSINESS AND TECHNOLOGY NEWS (September - November 2002) A selection of news appears in this section. A. Developer News B. New Products C. Research Results D. Government Activities and Funding News E. Overview Articles Where possible, links to full-text articles and press releases have been included in the abstracts. Click on the links in the table below to go directly to the abstract. Table of Contents: Business and Technology News A. Developer News · Amtech Lighting Services will provide LED traffic signals for City of Dallas, TX. · ATMI received a $9.46 million ONR grant to develop AlGaN/GaN HEMTs on 4-inch GaN and SiC substrates, part of DARPA’s Wide Bandgap Semiconductor Technology Initiative.

298

Solid-State Lighting: Solid-State Lighting Manufacturing Workshop  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid-State Lighting Solid-State Lighting Manufacturing Workshop to someone by E-mail Share Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on Facebook Tweet about Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on Twitter Bookmark Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on Google Bookmark Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on Delicious Rank Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on Digg Find More places to share Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on AddThis.com... Conferences & Meetings Past Conferences Presentations Publications Webcasts Videos Tools Solid-State Lighting Manufacturing Workshop Nearly 200 lighting industry leaders, chip makers, fixture and component

299

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network [OSTI]

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

300

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

P-type doping of GaN  

SciTech Connect (OSTI)

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

302

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN FranzKeldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

303

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect (OSTI)

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

304

Vacancy-Induced 22 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 22 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

305

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Nel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

306

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect (OSTI)

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

307

Lighting the Night: Technology, Urban Life and the Evolution of Street Lighting [Light in Place  

E-Print Network [OSTI]

May 1912), 783. 8. "New Street Lights Increase Trade 3 5 Perlight, including street light, became part of America'sBeautiful-inspired street lights graced wealthy residen

Holden, Alfred

1992-01-01T23:59:59.000Z

308

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

309

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

310

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

311

Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Pedestrian-Friendly Nighttime Pedestrian-Friendly Nighttime Lighting to someone by E-mail Share Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on Facebook Tweet about Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on Twitter Bookmark Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on Google Bookmark Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on Delicious Rank Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on Digg Find More places to share Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on AddThis.com... Conferences & Meetings Presentations Publications Webcasts Videos Tools Pedestrian-Friendly Nighttime Lighting This November 19, 2013 webinar presented issues and considerations related to pedestrian-friendly nighttime lighting, such as color rendering, safety,

312

Lighting Research Group: Facilities  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Facilities Facilities Lighting Research Facilities at LBNL gonio-photometer Gonio-photometer We use this device to measure the intensity and direction of the light from a lamp or fixture. integrating sphere Integrating sphere This instrument allows us to get a fast and accurate measurement of the total light output of a lamp. We are not able to determine the direction of the light, only the intensity. power analyzer Power analyzer We use our power analyzer with the lamps in the gonio-photometer to measure input power, harmonic distortion, power factor, and many other signals that tell us how well a lamp is performing. spectro-radiometer Spectro-radiometer This device measures not only the intensity of a light source but also the intensity of the light at each wavelength.

313

Lighting Group: Software  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Software Software Lighting Software The Lighting Group has developed several computer programs in the course of conducting research on energy efficient lighting. Several of these programs have proven useful outside the research environment. One of the most popular programs for advanced lighting applications is Radiance. For more information on this program and its availability, click on the link below. RADIANCE Radiance is a suite of programs for the analysis and visualization of lighting in design. The primary advantage of Radiance over simpler lighting calculation and rendering tools is that there are no limitations on the geometry or the materials that may be simulated. Radiance is used by architects and engineers to predict illumination, visual quality and appearance of innovative design spaces, and by researchers to evaluate new

314

National Synchrotron Light Source  

ScienceCinema (OSTI)

A tour of Brookhaven's National Synchrotron Light Source (NSLS), hosted by Associate Laboratory Director for Light Sources, Stephen Dierker. The NSLS is one of the world's most widely used scientific research facilities, hosting more than 2,500 guest researchers each year. The NSLS provides intense beams of infrared, ultraviolet, and x-ray light for basic and applied research in physics, chemistry, medicine, geophysics, environmental, and materials sciences.

BNL

2009-09-01T23:59:59.000Z

315

High efficiency incandescent lighting  

DOE Patents [OSTI]

Incandescent lighting structure. The structure includes a thermal emitter that can, but does not have to, include a first photonic crystal on its surface to tailor thermal emission coupled to, in a high-view-factor geometry, a second photonic filter selected to reflect infrared radiation back to the emitter while passing visible light. This structure is highly efficient as compared to standard incandescent light bulbs.

Bermel, Peter; Ilic, Ognjen; Chan, Walker R.; Musabeyoglu, Ahmet; Cukierman, Aviv Ruben; Harradon, Michael Robert; Celanovic, Ivan; Soljacic, Marin

2014-09-02T23:59:59.000Z

316

A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1. 3 and 1. 55 [mu]m  

SciTech Connect (OSTI)

This paper reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs superlattice multiplication region which are transparent for wavelengths of 1.55 and 1.3 [mu]m. The light reflection by the electrode enables the absorption layer to be as thin as 0.8 [mu]m without significantly reducing the quantum efficiency. A maximum bandwidth of 17 GHz was obtained at a low multiplication factor because of the transit time through the absorption layer is reduced.

Kagawa, Toshiaki; Kawamura, Yuichi; Iwamura, Hidetoshi (NTT Opto-electronics Labs., Atsugi-shi, Kanagawa (Japan))

1993-05-01T23:59:59.000Z

317

Total Light Management  

Broader source: Energy.gov (indexed) [DOE]

Light Management Light Management Why is saving Energy Important World Electricity Consumption (2007) Top 20 Countries 0 500 1000 1500 2000 2500 3000 3500 4000 4500 U n i t e d S t a t e s C h i n a J a p a n R u s s i a I n d i a G e r m a n y C a n a d a A f r i c a F r a n c e B r a z i l K o r e a , S o u t h U n i t e d K i n g d o m I t a l y S p a i n A u s t r a l i a T a i w a n S o u t h A f r i c a M e x i c o S a u d i A r a b i a I r a n Billion kWh Source: US DOE Energy Information Administration Lighting Control Strategies 4 5 6 Occupancy/Vacancy Sensing * The greatest energy savings achieved with any lighting fixture is when the lights are shut off * Minimize wasted light by providing occupancy sensing or vacancy sensing 7 8 Daylight Harvesting * Most commercial space has enough natural light flowing into it, and the amount of artificial light being generated can be unnecessary * Cut back on the production of artificial lighting by

318

Domestic Lighting and Heating  

Science Journals Connector (OSTI)

... a 14 22 feet room with a nice spacious window at each end admitting surreptitious draughts in proportion to the amount of light they let in. ...

M. GHEURY DE BRAY

1926-02-06T23:59:59.000Z

319

Comparing Light Bulbs  

Broader source: Energy.gov [DOE]

In this exercise, students will use a light to demonstrate the difference between being energy-efficient and energy-wasteful, and learn what energy efficiency means.

320

Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods  

SciTech Connect (OSTI)

An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy. The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (P{sub c}) with the increase of annealing temperature, followed by a saturation of P{sub c} beyond 350?C annealing. Since the increase of P{sub c} starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential for an optimal spin injection into semiconductor.

Barate, P.; Zhang, T. T.; Vidal, M.; Renucci, P.; Marie, X.; Amand, T. [Universit de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse (France); Liang, S.; Devaux, X.; Hehn, M.; Mangin, S.; Lu, Y., E-mail: yuan.lu@univ-lorraine.fr [Institut Jean Lamour, UMR 7198, CNRS-Nancy Universit, BP 239, 54506 Vandoeuvre (France); Frougier, J.; Jaffrs, H.; George, J. M. [Unit Mixte de Physique CNRS/Thales and Universit Paris-Sud 11, 1 avenue A. Fresnel, 91767 Palaiseau (France); Xu, B.; Wang, Z. [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China); Zheng, Y. [Institut des NanoSciences de Paris, UPMC, CNRS UMR 7588, 4 place Jussieu, 75005 Paris (France); Tao, B. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Universit, BP 239, 54506 Vandoeuvre (France); Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190 (China); Han, X. F. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190 (China)

2014-07-07T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy  

SciTech Connect (OSTI)

The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe{sub 2}MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 11.0.1.1 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni{sub 2}MnGa, although the pinning in the recent work is an epitaxial interface and in this work the e#11;ective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.

Jenkins, Catherine; Scholl, Andreas; Kainuma, R.; Elmers, Hans-Joachim; Omori, Toshihiro

2012-01-18T23:59:59.000Z

322

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

323

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; zgr, .; Morko, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

324

Lakeview Light and Power - Commercial Lighting Rebate Program | Department  

Broader source: Energy.gov (indexed) [DOE]

Lakeview Light and Power - Commercial Lighting Rebate Program Lakeview Light and Power - Commercial Lighting Rebate Program Lakeview Light and Power - Commercial Lighting Rebate Program < Back Eligibility Commercial Fed. Government Local Government Nonprofit State Government Savings Category Appliances & Electronics Commercial Lighting Lighting Program Info Funding Source Funded by Bonneville Power Administration Expiration Date 9/1/2013 State District of Columbia Program Type Utility Rebate Program Rebate Amount Commercial Lighting Installation: Up to 70% of cost Provider Lakeview Light and Power Lakeview Light and Power offers a commercial lighting rebate program. Rebates apply to the installation of energy efficient lighting retrofits in non-residential buildings. The rebate program is funded by BPA and ends in September of 2010 or earlier if the funding is exhausted. Lakeview Light

325

The development of integrated chemical microsensors in GaAs  

SciTech Connect (OSTI)

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

326

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

327

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

328

AIRPORT LIGHTING Session Highlights  

E-Print Network [OSTI]

. These sessions were designed to offer practical-yet-specialized training and information outreach for personnel information on airport lighting and navigational aid equipment selection, funding, maintenance, and operation known as AirTAP, sponsored three airport-lighting training sessions at different locations in Minnesota

Minnesota, University of

329

LED Lighting Facts  

Broader source: Energy.gov [DOE]

DOE's LED Lighting Facts program showcases LED products for general illumination from manufacturers who commit to testing products and reporting performance results according to industry standards. For lighting buyers, designers, and energy efficiency programs, the program provides information essential to evaluating SSL products.

330

Light intensity compressor  

DOE Patents [OSTI]

In a system for recording images having vastly differing light intensities over the face of the image, a light intensity compressor is provided that utilizes the properties of twisted nematic liquid crystals to compress the image intensity. A photoconductor or photodiode material that is responsive to the wavelength of radiation being recorded is placed adjacent a layer of twisted nematic liquid crystal material. An electric potential applied to a pair of electrodes that are disposed outside of the liquid crystal/photoconductor arrangement to provide an electric field in the vicinity of the liquid crystal material. The electrodes are substantially transparent to the form of radiation being recorded. A pair of crossed polarizers are provided on opposite sides of the liquid crystal. The front polarizer linearly polarizes the light, while the back polarizer cooperates with the front polarizer and the liquid crystal material to compress the intensity of a viewed scene. Light incident upon the intensity compressor activates the photoconductor in proportion to the intensity of the light, thereby varying the field applied to the liquid crystal. The increased field causes the liquid crystal to have less of a twisting effect on the incident linearly polarized light, which will cause an increased percentage of the light to be absorbed by the back polarizer. The intensity of an image may be compressed by forming an image on the light intensity compressor.

Rushford, Michael C. (Livermore, CA)

1990-01-01T23:59:59.000Z

331

Explosively pumped laser light  

DOE Patents [OSTI]

A single shot laser pumped by detonation of an explosive in a shell casing. The shock wave from detonation of the explosive causes a rare gas to luminesce. The high intensity light from the gas enters a lasing medium, which thereafter outputs a pulse of laser light to disable optical sensors and personnel.

Piltch, Martin S. (Los Alamos, NM); Michelotti, Roy A. (Los Alamos, NM)

1991-01-01T23:59:59.000Z

332

Structure of a Si(100)22-Ga surface  

Science Journals Connector (OSTI)

The 22 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

333

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

334

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN pin solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying

2013-05-01T23:59:59.000Z

335

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

336

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter

337

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network [OSTI]

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

338

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

339

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

340

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network [OSTI]

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

342

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network [OSTI]

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

343

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

344

Plasmonic Light Trapping in an Ultrathin Photovoltaic Layer with Film-Coupled Metamaterial Structures  

E-Print Network [OSTI]

A film-coupled metamaterial structure is numerically investigated for enhancing the light absorption in an ultrathin photovoltaic layer of crystalline gallium arsenide (GaAs). The top subwavelength concave grating and the bottom metallic film could not only effectively trap light with the help of wave interference and magnetic resonance effects excited above the bandgap, but also practically serve as electrical contacts for photon-generated charge collection. The energy absorbed by the active layer is greatly enhanced in the film-coupled metamaterial structure, resulting in significant enhancement on the short-circuit current density by three times over a free-standing GaAs layer at the same thickness. The results would facilitate the development of next-generation ultrathin solar cells with lower cost and higher efficiency.

Wang, Hao

2014-01-01T23:59:59.000Z

345

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect (OSTI)

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

346

Columbia Water and Light - HVAC and Lighting Efficiency Rebates |  

Broader source: Energy.gov (indexed) [DOE]

Columbia Water and Light - HVAC and Lighting Efficiency Rebates Columbia Water and Light - HVAC and Lighting Efficiency Rebates Columbia Water and Light - HVAC and Lighting Efficiency Rebates < Back Eligibility Commercial Industrial Savings Category Heating & Cooling Commercial Heating & Cooling Cooling Heat Pumps Appliances & Electronics Commercial Lighting Lighting Maximum Rebate Lighting: 50% of invoiced cost up to $22,500 Program Info State Missouri Program Type Utility Rebate Program Rebate Amount HVAC Replacements: $570 - $3,770 Lighting: $300/kW reduction or half of project cost Provider Columbia Water and Light Columbia Water and Light (CWL) offers rebates to its commercial and industrial customers for the purchase of high efficiency HVAC installations and efficient lighting. Incentives for certain measures are based upon the

347

Induction Lighting: An Old Lighting Technology Made New Again | Department  

Broader source: Energy.gov (indexed) [DOE]

Induction Lighting: An Old Lighting Technology Made New Again Induction Lighting: An Old Lighting Technology Made New Again Induction Lighting: An Old Lighting Technology Made New Again July 27, 2009 - 5:00am Addthis John Lippert Induction lighting is one of the best kept secrets in energy-efficient lighting. Simply stated, induction lighting is essentially a fluorescent light without electrodes or filaments, the items that frequently cause other bulbs to burn out quickly. Thus, many induction lighting units have an extremely long life of up to 100,000 hours. To put this in perspective, an induction lighting system lasting 100,000 hours will last more than 11 years in continuous 24/7 operation, and 25 years if operated 10 hours a day. The technology, however, is far from new. Nikola Tesla demonstrated induction lighting in the late 1890s around the same time that his rival,

348

Reading Municipal Light Department - Business Lighting Rebate Program |  

Broader source: Energy.gov (indexed) [DOE]

Reading Municipal Light Department - Business Lighting Rebate Reading Municipal Light Department - Business Lighting Rebate Program Reading Municipal Light Department - Business Lighting Rebate Program < Back Eligibility Agricultural Commercial Fed. Government Industrial Institutional Local Government Nonprofit Schools State Government Savings Category Appliances & Electronics Commercial Lighting Lighting Maximum Rebate Commercial Customers: $10,000 per calendar year Municipal Customers: $15,000 per calendar year Program Info State Massachusetts Program Type Utility Rebate Program Rebate Amount T-8/T-5 Lamp with Electronic Ballasts: $11 - $35/fixture Interior High Output Lamp with Electronic Ballasts: $100/fixture De-lamping: $4 - $9/lamp Lighting Sensors: $20/sensor LED Exit Signs: $20/fixture Provider Incentive Programs

349

Lighting fundamentals handbook: Lighting fundamentals and principles for utility personnel  

SciTech Connect (OSTI)

Lighting accounts for approximately 30% of overall electricity use and demand in commercial buildings. This handbook for utility personnel provides a source of basic information on lighting principles, lighting equipment, and other considerations related to lighting design. The handbook is divided into three parts. Part One, Physics of Light, has chapters on light, vision, optics, and photometry. Part Two, Lighting Equipment and Technology, focuses on lamps, luminaires, and lighting controls. Part Three, Lighting Design Decisions, deals with the manner in which lighting design decisions are made and reviews relevant methods and issues. These include the quantity and quality of light needed for visual tasks, calculation methods for verifying that lighting needs are satisfied, lighting economics and methods for evaluating investments in efficient lighting systems, and miscellaneous design issues including energy codes, power quality, photobiology, and disposal of lighting equipment. The handbook contains a discussion of the role of the utility in promoting the use of energy-efficient lighting. The handbook also includes a lighting glossary and a list of references for additional information. This convenient and comprehensive handbook is designed to enable utility lighting personnel to assist their customers in developing high-quality, energy-efficient lighting systems. The handbook is not intended to be an up-to-date reference on lighting products and equipment.

Eley, C.; Tolen, T. (Eley (Charles) Associates, San Francisco, CA (United States)); Benya, J.R. (Luminae Souter Lighting Design, San Francisco, CA (United States))

1992-12-01T23:59:59.000Z

350

Light and Bread Mold  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Light and Bread Mold Light and Bread Mold Name: CHASE Location: N/A Country: N/A Date: N/A Question: HOW CAN I EFICTIVELY TEST THE EFFECTS OF LIGHT ON BREAD MOLD? Replies: Hello Chase, In order to test the effects of light on bread mould you need to set up an experiment. There are two things you need to have in your experiment to make it a good experiment: 1. A 'control'. 2. Replicates 1. The 'control' Obviously in order to test the effects of light on bread mold you will need to actually shine some light on some bread mold and see what happens. This is your 'treatment'. However, it is vitally important that you know what would have happened without the treatment (in this case added light). Let's pretend that you do a test a you find that the bread mold under the light actually dies. How do you know if your bread mold died because light was added or because at that time of year all bread mold would die naturally or because by adding light you caused the temperature to rise and that killed the bread mold? The answer is that you do not know unless you have taken the trouble to find out with anouther test called the 'control'. The 'control' is a piece of bread mold, identical to the 'treatment' bread mold, which is placed in identical conditions to the 'treatment' piece of bread mold except that light is removed. Your 'control' piece of bread mold will need to be (to the best of your abillity) at the same temperature, in the same area, at similar humidity, etc. Part of the skill of designing a scientific experiment is being able think of all the possible things which might be affecting the bread mold and keeping them the same in both the 'treatment' and the 'control' (except, of course, for the presence of light) so that when you find a difference between the 'treatment' and the 'control' you are sure that it is the result of the light rather than something else.

351

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gmez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

352

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect (OSTI)

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castao, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

353

Lighting Basics | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Lighting Basics Lighting Basics Lighting Basics August 15, 2013 - 5:12pm Addthis Text Version There are many different types of artificial lights, all of which have different applications and uses. Types of lighting include: Fluorescent Lighting High-intensity Discharge Lighting Incandescent Lighting LED Lighting Low-pressure Sodium Lighting. Which type is best depends on the application. See the chart below for a comparison of lighting types. Lighting Comparison Chart Lighting Type Efficacy (lumens/watt) Lifetime (hours) Color Rendition Index (CRI) Color Temperature (K) Indoors/Outdoors Fluorescent Straight Tube 30-110 7000-24,000 50-90 (fair to good) 2700-6500 (warm to cold) Indoors/outdoors Compact Fluorescent 50-70 10,000 65-88 (good) 2700-6500 (warm to cold) Indoors/outdoors

354

Lighting Renovations | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Lighting Renovations Lighting Renovations Lighting Renovations October 16, 2013 - 4:54pm Addthis When undertaking a lighting renovation in a Federal building, daylighting is the primary renewable energy opportunity. Photovoltaics (PV) also present an excellent opportunity. While this guide focuses on the renewable energy opportunities, energy efficiency may also present amble opportunity for energy and cost savings. Renewable Energy Options for Lighting Renovations Daylighting Photovoltaics Daylighting Daylighting maximizes the use of natural light in a space to reduce the need for artificial lighting. Incorporating daylighting into a lighting strategy should occur during the planning stage of design since it affects all aspects. Ambient light dimming controls are critical in daylighting, since the

355

Lighting Group: Controls: IBECS  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

IBECS IBECS Integrated Building Environmental Communications System Objective The overall technical goal of the IBECS project is to develop an integrated building equipment communications network that will allow appropriate automation of lighting and envelope systems to increase energy efficiency, improve building performance, and enhance occupant experience in the space. This network will provide a low-cost means for occupants to control local lighting and window systems, thereby improving occupant comfort, satisfaction and performance. A related goal is to improve existing lighting control components and accelerate development of new daylighting technologies that will allow daylighting to be more extensively applied to a larger proportion of building floor space.

356

Green Light Pulse Oximeter  

DOE Patents [OSTI]

A reflectance pulse oximeter that determines oxygen saturation of hemoglobin using two sources of electromagnetic radiation in the green optical region, which provides the maximum reflectance pulsation spectrum. The use of green light allows placement of an oximetry probe at central body sites (e.g., wrist, thigh, abdomen, forehead, scalp, and back). Preferably, the two green light sources alternately emit light at 560 nm and 577 nm, respectively, which gives the biggest difference in hemoglobin extinction coefficients between deoxyhemoglobin, RHb, and oxyhemoglobin, HbO.sub.2.

Scharf, John Edward (Oldsmar, FL)

1998-11-03T23:59:59.000Z

357

White light velocity interferometer  

DOE Patents [OSTI]

The invention is a technique that allows the use of broadband and incoherent illumination. Although denoted white light velocimetry, this principle can be applied to any wave phenomenon. For the first time, powerful, compact or inexpensive sources can be used for remote target velocimetry. These include flash and arc lamps, light from detonations, pulsed lasers, chirped frequency lasers, and lasers operating simultaneously in several wavelengths. The technique is demonstrated with white light from an incandescent source to measure a target moving at 16 m/s.

Erskine, David J. (Oakland, CA)

1997-01-01T23:59:59.000Z

358

White light velocity interferometer  

DOE Patents [OSTI]

The invention is a technique that allows the use of broadband and incoherent illumination. Although denoted white light velocimetry, this principle can be applied to any wave phenomenon. For the first time, powerful, compact or inexpensive sources can be used for remote target velocimetry. These include flash and arc lamps, light from detonations, pulsed lasers, chirped frequency lasers, and lasers operating simultaneously in several wavelengths. The technique is demonstrated with white light from an incandescent source to measure a target moving at 16 m/s. 41 figs.

Erskine, D.J.

1997-06-24T23:59:59.000Z

359

White light velocity interferometer  

DOE Patents [OSTI]

The invention is a technique that allows the use of broadband and incoherent illumination. Although denoted white light velocimetry, this principle can be applied to any wave phenomenon. For the first time, powerful, compact or inexpensive sources can be used for remote target velocimetry. These include flash and arc lamps, light from detonations, pulsed lasers, chirped frequency lasers, and lasers operating simultaneously in several wavelengths. The technique is demonstrated with white light from an incandescent source to measure a target moving at 16 m/s.

Erskine, David J. (Oakland, CA)

1999-01-01T23:59:59.000Z

360

White light velocity interferometer  

DOE Patents [OSTI]

The invention is a technique that allows the use of broadband and incoherent illumination. Although denoted white light velocimetry, this principle can be applied to any wave phenomenon. For the first time, powerful, compact or inexpensive sources can be used for remote target velocimetry. These include flash and arc lamps, light from detonations, pulsed lasers, chirped frequency lasers, and lasers operating simultaneously in several wavelengths. The technique is demonstrated with white light from an incandescent source to measure a target moving at 16 m/s. 41 figs.

Erskine, D.J.

1999-06-08T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Spectrally Enhanced Lighting  

Broader source: Energy.gov [DOE]

Spectrally enhanced lighting (SEL) is a cost-effective, low-risk design method for achieving significant energy savings. It entails shifting the color of lamps from the warmer to the cooler (whiter) end of the color spectrum, more closely matching daylight. Studies show that, with this color shift, occupants perceive lighting to be brighter and they are able to see more clearly. Since SEL provides the same levels of visual acuity with fewer lumens of output, SEL installations can be designed using fewer lamps or lower wattage lamps than traditional lighting.

362

Peninsula Light Company - Commercial Efficient Lighting Rebate Program |  

Broader source: Energy.gov (indexed) [DOE]

Peninsula Light Company - Commercial Efficient Lighting Rebate Peninsula Light Company - Commercial Efficient Lighting Rebate Program Peninsula Light Company - Commercial Efficient Lighting Rebate Program < Back Eligibility Commercial Savings Category Appliances & Electronics Commercial Lighting Lighting Program Info State District of Columbia Program Type Utility Rebate Program Rebate Amount General: 30% - 70% of cost Provider Peninsula Light Company Peninsula Light Company (PLC) offers a rebate program for commercial customers who wish to upgrade to energy efficient lighting. Participating customers must be served by PLC commercial service. Customers who upgrade to highly efficient fixtures and systems are eligible to receive a rebate generally covering 30% - 70% of the project cost. These retrofits improve light quality and reduce energy costs in participating facilities. PLC

363

Lots of Light Literature  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Lots of Light Literature Lots of Light Literature The Teacher Resource Center contains a great variety of resources for all areas of science K-12. For the concepts of light here is a sampling of some of these resources. Science is Elementary - Spring 1995, vol. 6, no. 4. Science is Elementary is produced by the Museum Institute for Teaching Science, 79 Milk Street, Suite 210, Boston, MA 02109-3903. Science is Elementary is a newsletter we have admired for years. The topic of this issue deals with Color and Light. It contains content information to the teacher, trade secrets or teaching tips, "Book Looking" section and the section call "Sciencing" which includes a variety of activities. Science is Elementary is published quarterly. Subscription cost is: $22.00/year.

364

Solid-State Lighting  

Broader source: Energy.gov (indexed) [DOE]

-U.S. Senator Jeff Bingaman, Chair, Senate Committee on Energy and Natural Resources 2013-2025 * The Future of LED General Lighting 2013-2025 * The Promise of OLED General...

365

National Synchrotron Light Source  

ScienceCinema (OSTI)

A tour of Brookhaven's National Synchrotron Light Source (NSLS). The NSLS is one of the world's most widely used scientific research facilities, hosting more than 2,500 guest researchers each year. The NSLS provides intense beams of infrared, ultraviole

None

2010-01-08T23:59:59.000Z

366

Comparing Light Bulbs  

Broader source: Energy.gov (indexed) [DOE]

Comparing Light Bulbs Grades: K-4, 5-8 Topic: Energy Efficiency and Conservation Owner: U.S. Environmental Protection Agency This educational material is brought to you by the U.S....

367

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

368

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

369

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

370

Sandia National Laboratories: (Lighting and) Solid-State Lighting...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

on the third and upcoming revolution (illumination). Topics cover the basics of light-emitting diode (LED) operation; a 200-year history of lighting technology; the importance of...

371

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect (OSTI)

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

372

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect (OSTI)

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

373

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect (OSTI)

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

374

Lighting Design | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Design Design Lighting Design July 29, 2012 - 6:28pm Addthis Energy-efficient indoor and outdoor lighting design focuses on ways to improve both the quality and efficiency of lighting. | Photo courtesy of ©iStockphoto.com/chandlerphoto. Energy-efficient indoor and outdoor lighting design focuses on ways to improve both the quality and efficiency of lighting. | Photo courtesy of ©iStockphoto.com/chandlerphoto. How does it work? Buy ENERGY STAR-rated lighting for the highest quality, energy-efficient lighting. Use timers and other controls to turn lights on and off. Use outdoor solar lighting. Energy-efficient indoor and outdoor lighting design focuses on ways to improve both the quality and efficiency of lighting. If you're constructing a new house, consider lighting as part of your whole-house design -- an

375

LED Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

LED Lighting LED Lighting LED Lighting July 29, 2012 - 4:43pm Addthis LED Lighting What are the key facts? Quality LED products can last 25 times longer than an incandescent bulb and use 75% less energy. LEDs are directional, focusing light in ways that are useful in homes and commercial settings. The light-emitting diode (LED) is one of today's most energy-efficient and rapidly-developing lighting technologies. Quality LED light bulbs last longer, are more durable, and offer comparable or better light quality than other types of lighting. Check out the top 8 things about LEDs to learn more. Energy Savings LED is a highly energy efficient lighting technology, and has the potential to fundamentally change the future of lighting in the United States. Residential LEDs -- especially ENERGY STAR rated products -- use at least

376

Light and Energy -Daylight measurements  

E-Print Network [OSTI]

Light and Energy - Daylight measurements #12;Light and Energy - Daylight measurements Authors: Jens;3 Title Light and Energy Subtitle Daylight measurements Authors Jens Christoffersen, Ásta Logadóttir ............................................................................... 7 Measurement results: Kyosemi.................................................................. 9

377

Energy Conservation in Industrial Lighting  

E-Print Network [OSTI]

In order to reduce energy use in lighting Union Carbide recently issued drastically reduced new lighting level standards. A computerized lighting cost program was also developed. Using this program a number of additional energy saving techniques...

Meharg, E.

1979-01-01T23:59:59.000Z

378

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

379

Light diffusing fiber optic chamber  

DOE Patents [OSTI]

A light diffusion system for transmitting light to a target area. The light is transmitted in a direction from a proximal end to a distal end by an optical fiber. A diffusing chamber is operatively connected to the optical fiber for transmitting the light from the proximal end to the distal end and transmitting said light to said target area. A plug is operatively connected to the diffusing chamber for increasing the light that is transmitted to the target area.

Maitland, Duncan J. (Lafayette, CA)

2002-01-01T23:59:59.000Z

380

Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Los Angeles, CA to someone Los Angeles, CA to someone by E-mail Share Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop Presentations and Materials-Los Angeles, CA on Facebook Tweet about Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop Presentations and Materials-Los Angeles, CA on Twitter Bookmark Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop Presentations and Materials-Los Angeles, CA on Google Bookmark Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop Presentations and Materials-Los Angeles, CA on Delicious Rank Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop Presentations and Materials-Los Angeles, CA on Digg Find More places to share Solid-State Lighting: Municipal Consortium

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

GaN-based micro-LED arrays on flexible substrates for optical cochlear implants  

Science Journals Connector (OSTI)

Currently available cochlear implants are based on electrical stimulation of the spiral ganglion neurons. Optical stimulation with arrays of micro-sized light-emitting diodes (LEDs) promises to increase the number of distinguishable frequencies. Here, the development of a flexible GaN-based micro-LED array as an optical cochlear implant is reported for application in a mouse model. The fabrication of 15m thin and highly flexible devices is enabled by a laser-based layer transfer process of the GaN-LEDs from sapphire to a polyimide-on-silicon carrier wafer. The fabricated 50?50m2 LEDs are contacted via conducting paths on both p- and n-sides of the LEDs. Up to three separate channels could be addressed. The probes, composed of a linear array of the said LEDs bonded to the flexible polyimide substrate, are peeled off the carrier wafer and attached to flexible printed circuit boards. Probes with four LEDs and a width of 230m are successfully implanted in the mouse cochlea both in vitro and in vivo. The LEDs emit 60W at 1mA after peel-off, corresponding to a radiant emittance of 6mWmm?2.

Christian Goler; Colin Bierbrauer; Rdiger Moser; Michael Kunzer; Katarzyna Holc; Wilfried Pletschen; Klaus Khler; Joachim Wagner; Michael Schwaerzle; Patrick Ruther; Oliver Paul; Jakob Neef; Daniel Keppeler; Gerhard Hoch; Tobias Moser; Ulrich T Schwarz

2014-01-01T23:59:59.000Z

382

Better Medicine Through Proper Lighting  

Science Journals Connector (OSTI)

Adverse lighting conditions can seriously hinder medical diagnoses. Through the use of properly filtered light, medical professionals may dramatically improve viewing conditions for...

Czajkowski, Amber

383

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho

2014-03-01T23:59:59.000Z

384

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Vclav tengl, Jil Henych, Michaela Slun, Tom Matys Grygar, Jana Velick, Martin Kormunda

2014-01-01T23:59:59.000Z

385

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin

1999-05-01T23:59:59.000Z

386

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

387

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect (OSTI)

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

388

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

389

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network [OSTI]

N?GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance­ voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

390

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

391

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

392

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Blsi, Benedikt

393

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

394

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

395

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network [OSTI]

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

396

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

397

Solar lighting | Open Energy Information  

Open Energy Info (EERE)

lighting lighting Jump to: navigation, search Introductory Facts About Solar Lights It is not just a normal light bulb.The solar light consists of a LED or Light Emitting Diode, which draw little power. Coupled with constantly recharging batteries, you will never run out of light! They will save the customer money. By Replacing all outdoor lighting with solar lights there is no need to plug in to the electrical system. The lights will automatically turn on at dusk and will be charged during the day. They help out the environment.Not only does not plugging in to the power system save money but also energy, therefore protecting the Earth. Easy to Install No wires necessary, just pop in the battery. They come in all designs Just because they are solar lights doesn't

398

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect (OSTI)

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

399

ECE 466: LED Lighting Systems -Incandescent lightings rise and  

E-Print Network [OSTI]

versus cost - Power Electronic Drives for CFL and LED light sources to achieve dimmable operation - Basic electric AC and DC circuits at Sophomore level or equivalents Absolutes Lighting System Requirements index as a metric of a light source - Power Electronic Energy sources driving light sources in a compact

Schumacher, Russ

400

Advances in InGaAs/InP single-photon detector systems for quantum communication  

E-Print Network [OSTI]

Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III-V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized.

Zhang, Jun; Zbinden, Hugo; Pan, Jian-Wei

2015-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Solid-state lighting : lamp targets and implications for the semiconductor chip.  

SciTech Connect (OSTI)

A quiet revolution is underway. Over the next 5-10 years inorganic-semiconductor-based solid-state lighting technology is expected to outperform first incandescent, and then fluorescent and high-intensity-discharge, lighting. Along the way, many decision points and technical challenges will be faced. To help understand these challenges, the U.S. Department of Energy, the Optoelectronics Industry Development Association and the National Electrical Manufacturers Association recently updated the U.S. Solid-State Lighting Roadmap. In the first half of this paper, we present an overview of the high-level targets of the inorganic-semiconductor part of that update. In the second half of this paper, we discuss some implications of those high-level targets on the GaN-based semiconductor chips that will be the 'engine' for solid-state lighting.

Tsao, Jeffrey Yeenien

2003-08-01T23:59:59.000Z

402

Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-J. D. Yearsley, J. C. Lin, E. Hwang, S. Datta, and S. E. Mohney  

E-Print Network [OSTI]

Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n- InGaAs J. D. Yearsley, J at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe2 using pulsed laser resistivity of metals on nitrogen-doped cuprous oxide (Cu2O) thin-films J. Appl. Phys. 112, 084508 (2012

Yener, Aylin

403

Amber-green light-emitting diodes using order-disorder Al[subscript x]In[subscript 1?x]P heterostructures  

E-Print Network [OSTI]

We demonstrate amber-green emission from Al[subscript x]In[subscript 1 x]P light-emitting diodes (LEDs) with luminescence peaked at 566?nm and 600?nm. The LEDs are metamorphically grown on GaAs substrates via a graded ...

Christian, Theresa M.

404

Sandia National Laboratories: White Light Creation Architectures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

TechnologiesWhite Light Creation Architectures White Light Creation Architectures Overview of SSL White Light Creation Architectures The entire spectral range of visible light can...

405

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang

2011-10-01T23:59:59.000Z

406

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

407

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

408

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

409

Wisconsin Business Sheds Light on Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Wisconsin Business Sheds Light on Lighting Wisconsin Business Sheds Light on Lighting Wisconsin Business Sheds Light on Lighting April 29, 2010 - 4:59pm Addthis When this photograph was taken, the upper floors of Wisconsin’s Department of Transportation were using a new lighting plan from EPS, while the lower ones were still using the pre-audit lighting scheme. | Photo Courtesy of Energy Performance Specialists, LLC When this photograph was taken, the upper floors of Wisconsin's Department of Transportation were using a new lighting plan from EPS, while the lower ones were still using the pre-audit lighting scheme. | Photo Courtesy of Energy Performance Specialists, LLC Joshua DeLung Wisconsin-based Energy Performance Specialists LLC is helping clients reduce energy consumption in a very simple way-by just using less.

410

National Synchrotron Light Source  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Environmental Assessment Environmental Assessment Proposed Upgrade and Improvement of the National Synchrotron Light Source Complex at Brookhaven National Laboratory, Upton, New York This Environmental Assessment addresses the proposed action by the U.S. Department of Energy to upgrade the facilities of the National Synchrotron Light Source Complex, namely the National Synchrotron Light Source (NSLS), the Accelerator Test Facility and the Source Development Laboratory. The environmental effects of a No-Action Alternative as well as a Proposed Action are evaluated in the Environmental Assessment. The “NSLS Environmental Assessment Fact Sheet” link below leads to a one-page summary of the Environmental Assessment. The “NSLS Environmental Assessment” link below leads to the whole 41-page

411

Lighting Technology Panel  

Broader source: Energy.gov (indexed) [DOE]

Technology Panel Technology Panel Federal Utility Partnership Working Group N b 2009 November 1 1 8, 2009 Doug Avery Southern California Edison Southern California Edison National Energy Conservation M d t Mandates * There are Federal and State Mandates to reduce energy consumption - California Investor Owned Electric Utilities are ordered to save around 3 Billion kWh's each y year from 2007-2113 - Federal buildings ordered to reduce electrical Federal buildings ordered to reduce electrical energy consumption 35% by 2012 Energy Consump ption gy Lighting accounts for 42 7% of energy consumption Lighting accounts for 42.7% of energy consumption Data Courtesy of SDG&E Data Courtesy of SDG&E Energy Consump ption gy More than ¾ of the lighting load is non-residential. Data Courtesy of SDG&E

412

Light harvesting arrays  

DOE Patents [OSTI]

A light harvesting array useful for the manufacture of devices such as solar cells comprises: (a) a first substrate comprising a first electrode; and (b) a layer of light harvesting rods electrically coupled to the first electrode, each of the light harvesting rods comprising a polymer of Formula I: X.sup.1.paren open-st.X.sup.m+1).sub.m (I) wherein m is at least 1, and may be from two, three or four to 20 or more; X.sup.1 is a charge separation group (and preferably a porphyrinic macrocycle, which may be one ligand of a double-decker sandwich compound) having an excited-state of energy equal to or lower than that of X.sup.2, and X.sup.2 through X.sup.m+1 are chromophores (and again are preferably porphyrinic macrocycles).

Lindsey, Jonathan S. (Raleigh, NC)

2002-01-01T23:59:59.000Z

413

Thermoelectric properties of chalcopyrite type CuGaTe{sub 2} and chalcostibite CuSbS{sub 2}  

SciTech Connect (OSTI)

Electronic and transport properties of CuGaTe{sub 2}, a hole-doped ternary copper based chalcopyrite type semiconductor, are studied using calculations within the Density Functional Theory and solving the Boltzmann transport equation within the constant relaxation time approximation. The electronic band structures are calculated by means of the full-potential linear augmented plane wave method, using the Tran-Blaha modified Becke-Johnson potential. The calculated band gap of 1.23?eV is in agreement with the experimental value of 1.2?eV. The carrier concentration- and temperature dependent thermoelectric properties of CuGaTe{sub 2} are derived, and a figure of merit of zT?=?1.69 is obtained at 950?K for a hole concentration of 3.710{sup 19}?cm{sup ?3}, in agreement with a recent experimental finding of zT?=?1.4, confirming that CuGaTe{sub 2} is a promising material for high temperature thermoelectric applications. The good thermoelectric performance of p-type CuGaTe{sub 2} is associated with anisotropic transport from a combination of heavy and light bands. Also for CuSbS{sub 2} (chalcostibite), a better performance is obtained for p-type than for n-type doping. The variation of the thermopower as a function of temperature and concentration suggests that CuSbS{sub 2} will be a good thermoelectric material at low temperatures, similarly to the isostructural CuBiS{sub 2} compound.

Kumar Gudelli, Vijay; Kanchana, V., E-mail: kanchana@iith.ac.in [Department of Physics, Indian Institute of Technology Hyderabad, Ordnance Factory Estate, Yeddumailaram 502 205, Andhra Pradesh (India); Vaitheeswaran, G. [Advanced Centre of Research in High Energy Materials (ACRHEM), University of Hyderabad, Prof. C. R. Rao Road, Gachibowli, Hyderabad 500 046, Andhra Pradesh (India); Svane, A.; Christensen, N. E. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)

2013-12-14T23:59:59.000Z

414

Locations Everyone: Lights, Camera, Action!  

Science Journals Connector (OSTI)

Locations Everyone: Lights, Camera, Action! ... Harvard Institute of Proteomics Harvard Medical School ...

Robert F. Murphy; Joshua LaBaer

2008-12-05T23:59:59.000Z

415

Extreme Ultraviolet Light Chris Cosio  

E-Print Network [OSTI]

Prospectus Extreme Ultraviolet Light Chris Cosio #12;The field of extreme ultraviolet light (XUV to the way XUV interacts with object, XUV properties are difficult to observe. Extreme ultraviolet light is absorbed by all objects it comes in contact with. Furthermore, extreme ultraviolet light also has low

Hart, Gus

416

Nonlinear theory of slow light  

Science Journals Connector (OSTI)

...describes a signal moving with the speed of light on a constant background (fast...profile, propagates with the speed of light, reaches the slow-light soliton...field and propagating with the speed of light has reached the soliton. In figure-6...

2011-01-01T23:59:59.000Z

417

Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy  

Science Journals Connector (OSTI)

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work.

Ph. Ebert and K. Urban

1998-07-15T23:59:59.000Z

418

Another Side of Light - D  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

D. Three quantum phenomena D. Three quantum phenomena In fluorescence, matter absorbs light waves of a high frequency and then emits light of the same or lower frequency. This process was studied and named by George Gabriel Stokes in the mid-19th century. Today, fluorescence is familiar to us from fluorescent light bulbs. A fluorescent bulb's filament produces ultraviolet light, which is absorbed by the bulb's inner coating, which then emits lower-frequency visible light-more visible light than an incandescent bulb produces with the same wattage. According to the hypothesis of light quanta, during fluorescence an atom absorbs a quantum of light whose energy is proportional to the light wave's frequency. If the atom doesn't supply any extra energy of its own, the light quantum emitted should either have the same energy or less energy

419

Tips: Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Lighting Lighting Tips: Lighting May 4, 2012 - 3:16pm Addthis Lighting Choices Save You Money. Energy-efficient light bulbs are available in a wide variety of sizes and shapes. Lighting Choices Save You Money. Energy-efficient light bulbs are available in a wide variety of sizes and shapes. What does this mean for me? Replacing 15 inefficient incandescent bulbs in your home with energy-saving bulbs could save you about $50 per year. For the greatest savings, replace your old incandescent bulbs with ENERGY STAR-qualified bulbs. An average household dedicates about 10% of its energy budget to lighting. Switching to energy-efficient lighting is one of the fastest ways to cut your energy bills. Timers and motion sensors save you even more money by reducing the amount of time lights are on but not being used.

420

Tokyo Street Lights  

E-Print Network [OSTI]

that you have only 17, no 16, no 15 seconds left to get to the other side before the light changes and the impatient American drivers put the pedal to the metal and it's road kill time. Talk about stress! In Tokyo, crossing the street is a leisurely...

Hacker, Randi; Tsutsui, William

2008-03-12T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Radioluminescent polymer lights  

SciTech Connect (OSTI)

The preparation of radioluminescent light sources where the tritium is located on the aryl-ring in a polymer has been demonstrated with deuterium/tritium substitution. This report discusses tests, results, and future applications of radioluminescent polymers. 10 refs. (FI)

Jensen, G.A.; Nelson, D.A.; Molton, P.M.

1990-09-01T23:59:59.000Z

422

Environmental Preferences LIGHT: Sunny.  

E-Print Network [OSTI]

Environmental Preferences LIGHT: Sunny. SOIL: Well-drained, deep sandy loam. FERTILITY: Medium beans BeansDiane Relf, Extension Specialist, Horticulture, Virginia Tech Alan McDaniel, Extension Specialist, Horticulture, Virginia Tech are yellow and waxy in appearance, their flavor is only subtly

Liskiewicz, Maciej

423

Studies in Light Production  

Science Journals Connector (OSTI)

... interested in that subject. The collection consists of ten chapters which have appeared in The Electrician, together with two others. It may at once be said that the contents are ... contents are not only extremely interesting, but will also serve as a useful and important handbook for lighting engineers. ...

1912-12-26T23:59:59.000Z

424

Electroluminescence and phototrigger effect in single crystals of GaS{sub x}Se{sub 1-x} alloys  

SciTech Connect (OSTI)

The effects of switching and electroluminescence as well as the interrelation between these effects in single crystals of GaS{sub x}Se{sub 1-x} alloys are detected and studied. It is established that the threshold voltage for switching depends on temperature, resistivity, and composition of alloys, and also on the intensity and spectrum of photoactive light. As a result, a phototrigger effect is observed; this effect arises under irradiation with light from the fundamental-absorption region. Electroluminescence is observed in the subthreshold region of the current-voltage characteristic; the electroluminescence intensity decreases drastically to zero as the sample is switched from a high-resistivity state to a low-resistivity state. Experimental data indicating that the electroluminescence and the switching effect are based on the injection mechanism (as it takes place in other layered crystals of the III-V type) are reported.

Kyazym-Zade, A. G., E-mail: bsu_aydin@yahoo.com; Salmanov, V. M.; Mokhtari, A. G.; Dadashova, V. V.; Agaeva, A. A. [Baku State University (Azerbaijan)

2008-05-15T23:59:59.000Z

425

Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector  

SciTech Connect (OSTI)

In order to increase the radiative efficiency and directivity of spontaneous emission from a lattice-matched InGaAs/InP heterostructure, we have polished the substrate into a parabolic reflector. We combine optical and thermal measurements to obtain the absolute external efficiency over a wide range of carrier densities. Using a simple model, the measurement is used to determine interface, radiative, and Auger recombination rates in the active material. At the optimal density, the quantum efficiency exceeds 60{percent} at room temperature. The divergence of the emitted light is less than 20{degree}. In fact, the beam profile is dominated by a 6{degree} wide lobe that can be swept across the field of emission by changing the excitation position. This suggests a way to create an all-electronic scanned light beam. {copyright} {ital 1998 American Institute of Physics.}

Gfroerer, T.H.; Cornell, E.A. [JILA, National Institute of Standards and Technology and University of Colorado, and Department of Physics, University of Colorado, Boulder, Colorado, 80309-0440 (United States)] [JILA, National Institute of Standards and Technology and University of Colorado, and Department of Physics, University of Colorado, Boulder, Colorado, 80309-0440 (United States); Wanlass, M.W. [National Renewable Energy Laboratory, Golden, Colorado, 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado, 80401 (United States)

1998-11-01T23:59:59.000Z

426

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

427

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

428

Intrinsic nature of visible-light absorption in amorphous semiconducting oxides  

SciTech Connect (OSTI)

To enlighten microscopic origin of visible-light absorption in transparent amorphous semiconducting oxides, the intrinsic optical property of amorphous InGaZnO{sub 4} is investigated by considering dipole transitions within the quasiparticle band structure. In comparison with the crystalline InGaZnO{sub 4} with the optical gap of 3.6 eV, the amorphous InGaZnO{sub 4} has two distinct features developed in the band structure that contribute to significant visible-light absorption. First, the conduction bands are down-shifted by 0.55 eV mainly due to the undercoordinated In atoms, reducing the optical gap between extended states to 2.8 eV. Second, tail states formed by localized oxygen p orbitals are distributed over ?0.5 eV near the valence edge, which give rise to substantial subgap absorption. The fundamental understanding on the optical property of amorphous semiconducting oxides based on underlying electronic structure will pave the way for resolving instability issues in recent display devices incorporating the semiconducting oxides.

Kang, Youngho; Song, Hochul; Han, Seungwu, E-mail: hansw@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-755 (Korea, Republic of); Nahm, Ho-Hyun [Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747 (Korea, Republic of); Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Jeon, Sang Ho; Cho, Youngmi [CAE Team, Samsung Display Co., Ltd, 95 Samsung 2-ro, Giheung-gu, Youngin-City, Gyeonggi-Do 446-711 (Korea, Republic of)

2014-03-01T23:59:59.000Z

429

Embodied Energy and Off-Grid Lighting  

E-Print Network [OSTI]

solar and wind energy systems. 7 If anticipated improvements in LED lighting system performance (Lighting Africa,

Alstone, Peter

2012-01-01T23:59:59.000Z

430

2006 Archived Selected Headlines of Solid-State Lighting Headlines News  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

March 31, 2006 Group4 Labs announced the first 2-inch GaN-on-diamond semiconductor wafer, the second product in the company's Xero Wafer family. As with the first Xero product, the new wafer also features a single GaN atomically attached to a synthetic diamond substrate, permitting high-temperature resilience for electronic, solid-state lighting, and military applications. The new material offers a unique thermal management solution by extricating heat from the chip's core almost at the instant that it is generated. This is due to the nanometer proximity of the chip's active region to diamond, a nearly perfect thermal conductor. [ Press release ] March 30, 2006 UK's Department of Trade & Industry (DTI) Technology Programme announced funding of £9 million (US$15.6 million) for collaborative R&D projects in the area of electronics and photonics, including high-efficacy solid-state lighting systems. The projects, which must include at least two partners and one end user, will be 50% funded by participants. Emphasis will be placed on projects that address identified needs with the potential for significant improvements and efficiencies. Identified needs include high-brightness, high-efficiency devices, particularly white-light sources for illumination, and improved-efficiency packaging techniques for next-generation lighting systems. [ News item in LEDs Magazine, DTI document ]

431

Incandescent Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Incandescent Lighting Incandescent Lighting Incandescent Lighting October 17, 2013 - 6:15pm Addthis Incandescent lighting is the most common, and least energy efficient, type of lighting used in homes. | Photo courtesy of ©iStockphoto/TokenPhoto. Incandescent lighting is the most common, and least energy efficient, type of lighting used in homes. | Photo courtesy of ©iStockphoto/TokenPhoto. Incandescent lamps are often considered the least energy efficient type of electric lighting commonly found in residential buildings. Although inefficient, incandescent lamps possess a number of key advantages--they are inexpensive to buy, turn on instantly, are available in a huge array of sizes and shapes and provide a pleasant, warm light with excellent color rendition. However, because of their relative inefficiency and short life spans, they

432

Incandescent Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Incandescent Lighting Incandescent Lighting Incandescent Lighting October 17, 2013 - 6:15pm Addthis Incandescent lighting is the most common, and least energy efficient, type of lighting used in homes. | Photo courtesy of ©iStockphoto/TokenPhoto. Incandescent lighting is the most common, and least energy efficient, type of lighting used in homes. | Photo courtesy of ©iStockphoto/TokenPhoto. Incandescent lamps are often considered the least energy efficient type of electric lighting commonly found in residential buildings. Although inefficient, incandescent lamps possess a number of key advantages--they are inexpensive to buy, turn on instantly, are available in a huge array of sizes and shapes and provide a pleasant, warm light with excellent color rendition. However, because of their relative inefficiency and short life spans, they

433

Fluorescent Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Fluorescent Lighting Fluorescent Lighting Fluorescent Lighting October 17, 2013 - 5:44pm Addthis Fluorescent Lighting Fluorescent Lighting Fluorescent lamps use 25%-35% of the energy used by incandescent products to provide a similar amount of light. They also last about 10 times longer (7,000-24,000 hours). The two general types of fluorescent lamps are: Compact fluorescent lamps (CFLs) -- commonly found with integral ballasts and screw bases, these are popular lamps often used in household fixtures Fluorescent tube and circline lamps -- typically used for task lighting such as garages and under cabinet fixtures, and for lighting large areas in commercial buildings. CFLs CFLs combine the energy efficiency of fluorescent lighting with the convenience and popularity of incandescent fixtures. CFLs fit most fixtures

434

Effect of plasmonic losses on light emission enhancement in quantum-wells coupled to metallic gratings  

SciTech Connect (OSTI)

Recent experimental work has shown significant luminescence enhancement from near-surface quantum-well (QW) structures using metallic grating to convert surface plasmon (SP) modes into radiative modes. This work introduces a detailed theoretical study of plasmonic losses and the role of SPs in improving light extraction from grated light-emitting QW structures, using the fluctuational electrodynamics method. The method explains experimental results demonstrating emission enhancement, light scattering, and plasmonic coupling in the structures. We study these effects in angle-resolved reflectometry and luminescence setups in InGaN QW structures with silver grating. In contrast to experiments, our model allows direct calculation of the optical losses. The model predicts that the plasmonic coupling and scattering increases light emission by a factor of up to three compared to a flat semiconductor structure. This corresponds to reducing the absorption losses from approximately 93% in the ungrated metallic structure to 75% in the grated structure. Lower losses are associated with a significant emission enhancement enabled by the SPs of silver/GaN interfaces, which are present in the blue/green wavelength range, and can be optimized by carefully nanostructuring the metal layer and by the positioning of the QW. In general, the enhancement results from the interplay of mode scattering, conversion of SP energy directly into light, and losses in the metallic grating. The reported losses are very high when compared to the losses present in modern light-emitting diodes (LEDs). Albeit, our work provides tools needed for further optimization of plasmonic light extraction, eventually leading to highly efficient LEDs.

Sadi, Toufik; Oksanen, Jani; Tulkki, Jukka [Department of Biomedical Engineering and Computational Sciences, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)

2013-12-14T23:59:59.000Z

435

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network [OSTI]

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

436

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

437

Light with nonzero chemical potential  

Science Journals Connector (OSTI)

Thermodynamic states and processes involving light are discussed in which the chemical potential of light is nonzero. Light with nonzero chemical potential is produced in photochemical reactions for example in a light emitting diode. The chemical potential of black-body radiation becomes negative upon a Joule expansion. The isothermal diffusion of light which is a common phenomenon is driven by the gradient in the chemical potential. These and other examples support the idea that light can be interpreted as a gas of photons with properties similar to a material gas.

F. Herrmann; P. Wrfel

2005-01-01T23:59:59.000Z

438

Lighting the Way with Compact Fluorescent Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Lighting the Way with Compact Fluorescent Lighting Lighting the Way with Compact Fluorescent Lighting Lighting the Way with Compact Fluorescent Lighting April 28, 2009 - 5:00am Addthis John Lippert There is a major push today to get homeowners to adopt compact fluorescent lamp (CFL) light bulbs. They have been on the market for nearly three decades, and many homeowners still do not use them widely. But the tide is definitely turning. Their availability and the percentage of homeowners familiar with the technology and purchasing them for their homes have been steadily rising. The products have improved considerably compared to early products, and their prices have plummeted. The ENERGY STAR® Change a Light, Change the World Campaign has been running now for more than half a dozen years. This campaign is designed to

439

Types of Lighting in Commercial Buildings - Lighting Characteristics  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

of Lighting Types Efficacy Efficacy is the amount of light produced per unit of energy consumed, expressed in lumens per watt (lmW). Lamps with a higher efficacy value are...

440

Lighting Designer Roundtable on Solid-State Lighting  

Broader source: Energy.gov [DOE]

Roundtable meeting in Chicago of a group of lighting designers focused on examining solid-state lighting (SSL) market and technology issues and encouraging a discussion of designers experiences, ideas, and recommendations regarding SSL & SSL industry.

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Lighting the Way with Compact Fluorescent Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Lighting the Way with Compact Fluorescent Lighting Lighting the Way with Compact Fluorescent Lighting Lighting the Way with Compact Fluorescent Lighting April 28, 2009 - 5:00am Addthis John Lippert There is a major push today to get homeowners to adopt compact fluorescent lamp (CFL) light bulbs. They have been on the market for nearly three decades, and many homeowners still do not use them widely. But the tide is definitely turning. Their availability and the percentage of homeowners familiar with the technology and purchasing them for their homes have been steadily rising. The products have improved considerably compared to early products, and their prices have plummeted. The ENERGY STAR® Change a Light, Change the World Campaign has been running now for more than half a dozen years. This campaign is designed to

442

National Synchrotron Light Source  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Report 2001 Report 2001 National Synchrotron Light Source For the period October 1, 2000 through September 30, 2001 Introduction Science Highlights Year in Review Operations Publications Abstracts Nancye Wright & Lydia Rogers The National Synchrotron Light Source Department is supported by the Office of Basic Energy Sciences United States Department of Energy Washington, D.C. Brookhaven National Laboratory Brookhaven Science Associates, Inc. Upton, New York 11973 Under Contract No. DE-AC02-98CH10886 Mary Anne Corwin Steven N. Ehrlich & Lisa M. Miller Managing Editor Science Editors Production Assistants Cover images (clockwise from top left) 1. from Science Highlight by K.R. Rajashankar, M.R. Chance, S.K. Burley, J. Jiang, S.C. Almo, A. Bresnick, T. Dodatko, R. Huang, G. He,

443

Fusion pumped light source  

DOE Patents [OSTI]

Apparatus is provided for generating energy in the form of light radiation. A fusion reactor is provided for generating a long, or continuous, pulse of high-energy neutrons. The neutron flux is coupled directly with the lasing medium. The lasing medium includes a first component selected from Group O of the periodic table of the elements and having a high inelastic scattering cross section. Gamma radiation from the inelastic scattering reactions interacts with the first component to excite the first component, which decays by photon emission at a first output wavelength. The first output wavelength may be shifted to a second output wavelength using a second liquid component responsive to the first output wavelength. The light outputs may be converted to a coherent laser output by incorporating conventional optics adjacent the laser medium.

Pappas, Daniel S. (Los Alamos, NM)

1989-01-01T23:59:59.000Z

444

OLEDS FOR GENERAL LIGHTING  

SciTech Connect (OSTI)

The goal of this program was to reduce the long term technical risks that were keeping the lighting industry from embracing and developing organic light-emitting diode (OLED) technology for general illumination. The specific goal was to develop OLEDs for lighting to the point where it was possible to demonstrate a large area white light panel with brightness and light quality comparable to a fluorescence source and with an efficacy comparable to that of an incandescent source. it was recognized that achieving this would require significant advances in three area: (1) the improvement of white light quality for illumination, (2) the improvement of OLED energy efficiency at high brightness, and (3) the development of cost-effective large area fabrication techniques. The program was organized such that, each year, a ''deliverable'' device would be fabricated which demonstrated progress in one or more of the three critical research areas. In the first year (2001), effort concentrated on developing an OLED capable of generating high illumination-quality white light. Ultimately, a down-conversion method where a blue OLED was coupled with various down-conversion layers was chosen. Various color and scattering models were developed to aid in material development and device optimization. The first year utilized this approach to deliver a 1 inch x 1 inch OLED with higher illumination-quality than available fluorescent sources. A picture of this device is shown and performance metrics are listed. To their knowledge, this was the first demonstration of true illumination-quality light from an OLED. During the second year, effort concentrated on developing a scalable approach to large area devices. A novel device architecture consisting of dividing the device area into smaller elements that are monolithically connected in series was developed. In the course of this development, it was realized that, in addition to being scalable, this approach made the device tolerant to the most common OLED defect--electrical shorts. This architecture enabled the fabrication of a 6 inch x 6 inch OLED deliverable for 2002. A picture of this deliverable is shown and the performance metrics are listed. At the time, this was the highest efficiency, highest lumen output illumination-quality OLED in existence. The third year effort concentrated on improving the fabrication yield of the 6 inch x 6 inch devices and improving the underlying blue device efficiency. An efficiency breakthrough was achieved through the invention of a new device structure such that now 15 lumen per watt devices could be fabricated. A 2 feet x 2 feet OLED panel consisting of sixteen 6 inch x 6 inch high efficiency devices tiled together was then fabricated. Pictures of this panel are shown with performance metrics listed. This panel met all project objectives and was the final deliverable for the project. It is now the highest efficiency, highest lumen output, illumination-quality OLED in existence.

Anil Duggal; Don Foust; Chris Heller; Bill Nealon; Larry Turner; Joe Shiang; Nick Baynes; Tim Butler; Nalin Patel

2004-02-29T23:59:59.000Z

445

First Light SOFIA Instruments  

E-Print Network [OSTI]

The Stratospheric Observatory For Infrared Astronomy SOFIA will become operational with the next two years. It will be the biggest astronomical airborne observatory ever build, comprising a 3m-class telescope onboard a Boeing 747SP. A suite of first-light instruments is under development striving for cutting edge technology to make SOFIA a milestone in infrared astronomy. Here we present an overview over the instrumentation and an update on the current status.

Alfred Krabbe; Sean C. Casey

2002-07-19T23:59:59.000Z

446

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

447

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

448

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

449

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network [OSTI]

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

450

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

451

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

452

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

453

Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)  

Science Journals Connector (OSTI)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest ?110? directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation. A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

C. Giannini; L. Tapfer; Y. Zhuang; L. De Caro; T. Marschner; W. Stolz

1997-02-15T23:59:59.000Z

454

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network [OSTI]

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

455

Solid-State Lighting: Contacts  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Contacts Contacts Printable Version Share this resource Send a link to Solid-State Lighting: Contacts to someone by E-mail Share Solid-State Lighting: Contacts on Facebook Tweet about Solid-State Lighting: Contacts on Twitter Bookmark Solid-State Lighting: Contacts on Google Bookmark Solid-State Lighting: Contacts on Delicious Rank Solid-State Lighting: Contacts on Digg Find More places to share Solid-State Lighting: Contacts on AddThis.com... Contacts Web site and program contacts are provided below. Website Contact Send us your comments, report problems, and/or ask questions about information on this site. Program Contacts Contact information for the Solid-State Lighting Program. Contacts | Web Site Policies | U.S. Department of Energy | USA.gov Content Last Updated: 02/14

456

Solid-State Lighting: Publications  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Publications to someone by Publications to someone by E-mail Share Solid-State Lighting: Publications on Facebook Tweet about Solid-State Lighting: Publications on Twitter Bookmark Solid-State Lighting: Publications on Google Bookmark Solid-State Lighting: Publications on Delicious Rank Solid-State Lighting: Publications on Digg Find More places to share Solid-State Lighting: Publications on AddThis.com... Conferences & Meetings Presentations Publications Postings Articles Program Fact Sheets Technology Fact Sheets CALiPER Reports GATEWAY Reports LED Lighting Facts Reports Project Reports Studies and Reports Technology Roadmaps Product Performance Guides Webcasts Videos Tools Publications The Solid-State Lighting (SSL) program produces a comprehensive portfolio of publications, ranging from overviews of the program's research

457

Plastics That Play on Light  

Science Journals Connector (OSTI)

...instrument. In most materials, the "strings" respond with the same note, only...reduced when light sets the electrons oscillating. The loss ofaromatic stability sets...double bonds, light sets electrons oscillating between electron-attract-ing (right...

David Bradley

1993-09-03T23:59:59.000Z

458

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

459

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect (OSTI)

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

460

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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461

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Universit, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

462

Novel photoaffinity ligands for the GA-receptor  

SciTech Connect (OSTI)

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. (USDA/ARS Biosciences Research Laboratory, Fargo, ND (USA))

1990-05-01T23:59:59.000Z

463

Webinar: Fuel Cell Mobile Lighting  

Broader source: Energy.gov [DOE]

Video recording of the Fuel Cell Technologies Office webinar, Fuel Cell Mobile Lighting, originally presented on November 13, 2012.

464

Photodetector with enhanced light absorption  

DOE Patents [OSTI]

A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.

Kane, James (Lawrenceville, NJ)

1985-01-01T23:59:59.000Z

465

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect (OSTI)

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

466

Dark defects in InGaAsP/InP double heterostructure lasers under accelerated aging  

SciTech Connect (OSTI)

Degradation modes due to dark defects under accelerated aging for InGaAsP/InP double heterostructure lasers are investigated by monitoring pulse threshold current, leak current, absorption coefficient, gain factor, and electroluminescence topograph. Most of the dark defects are dark spot defects (DSD's) and there are only few <100> dark line defects. At the initial stage of the degradation, these dark defects scarcely absorb the emitted light, and the reduction of gain factor causes the increase of pulse threshold current. After this stage, dark defects begin to act as absorber of the emitted light. The generation time of such DSD's strongly depends on the injected current density but only weakly on the junction temperature in the range of 25/sup 0/ to 250/sup 0/C. The activation energies for the generation time of the first dark spot defect and the growing speed of <100> dark line defects are estimated to be 0.16 and 0.2 eV, respectively.

Fukuda, M.; Wakita, K.; Iwane, G.

1983-03-01T23:59:59.000Z

467

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network [OSTI]

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

468

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

469

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

470

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

471

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

472

Arnold Schwarzenegger, LIGHTING RESEARCH PROGRAM  

E-Print Network [OSTI]

;#12;Prepared By: Lighting Research Center Andrew Bierman, Project Lead Troy, New York 12180 Managed ByArnold Schwarzenegger, Governor LIGHTING RESEARCH PROGRAM PROJECT 3.2 ENERGY EFFICIENT LOAD- SHEDDING LIGHTING TECHNOLOGY Prepared For: California Energy Commission Public Interest Energy Research

473

Red light, green light | Y-12 National Security Complex  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Red light, green light Red light, green light Red light, green light Posted: December 4, 2013 - 6:28pm After the National Nuclear Security Administration signaled Y-12 to begin resuming full operations after a potential furlough, Production Vice President Bill Tindal said Production had two objectives: refocus production employees on safety, security and quality, and ensure preparedness for normal operations. "It's tempting to jump right back in when you get the green light," Tindal said. "We were in an abnormal state that really shook people. Focusing on people came first." Production began with return-to-work briefings. "During the briefings, we asked employees what they were concerned about, what was causing them stress," Tindal said. "Another concept from the briefing was the theme

474

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

475

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

476

Surface morphology and magnetic anisotropy in (Ga,Mn)As  

E-Print Network [OSTI]

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

S. Piano; X. Marti; A. W. Rushforth; K. W. Edmonds; R. P. Campion; O. Caha; T. U. Schulli; V. Holy; B. L. Gallagher

2010-10-01T23:59:59.000Z

477

Operating experience with a GaAs photoemission electron source  

SciTech Connect (OSTI)

We report on the development of several operating procedures that promise to make GaAs photoemission electron sources easier to construct, more reliable to operate, and more amenable to use in dynamic vacuum systems. We describe in particular a method for ''ohmically'' heating a <100> crystal of GaAs under vacuum to approximately 600 /sup 0/C. We also discuss our observations of the role of oxygen in the activation of the crystal surface, the use of continuous cesiation, and of the performance of the crystal under varying vacuum conditions.

Tang, F.C.; Lubell, M.S.; Rubin, K.; Vasilakis, A.; Eminyan, M.; Slevin, J.

1986-12-01T23:59:59.000Z

478

An investigation on reliable passivation of GaP  

E-Print Network [OSTI]

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

479

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

480

Contribution of light-by-light scattering to energy levels of light muonic atoms  

Science Journals Connector (OSTI)

The complete contribution of diagrams with the light-by-light scattering to the Lamb shift is found for muonic hydrogen, deuterium and helium ion. The results are obtained in the static-muon approximation and ...

S. G. Karshenboim; E. Yu. Korzinin; V. G. Ivanov; V. A. Shelyuto

2010-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Pedestrian Friendly Outdoor Lighting  

SciTech Connect (OSTI)

This GATEWAY report discusses the problems of pedestrian lighting that occur with all technologies with a focus on the unique optical options and opportunities offered by LEDs through the findings from two pedestrian-focused projects, one at Stanford University in California, and one at the Chautauqua Institution in upstate New York. Incorporating user feedback this report reviews the tradeoffs that must be weighed among visual comfort, color, visibility, efficacy and other factors to stimulate discussion among specifiers, users, energy specialists, and in industry in hopes that new approaches, metrics, and standards can be developed to support pedestrian-focused communities, while reducing energy use.

Miller, Naomi J.; Koltai, Rita; McGowan, Terry

2013-12-31T23:59:59.000Z

482

Structural Properties of Eu-Doped GaN Investigated by Raman Spectroscopy  

SciTech Connect (OSTI)

Rare-earth (RE) impurities doped GaN are highly promising candidates for light emitting device applications due to their efficient electroluminescence properties at room temperature. Among those, Eu doped GaN has been identified as an excellent material for the red spectral region due to its strong emission at 620 nm. As a transition internal to the Eu doping atom (4f-4f), light emission originates in a much smaller complex than the more flexibly controllable quantum structures of wells, wires, and dots. This is thought to make the center less susceptible to structural defects and in particular radiation damage in the lattice host. Nevertheless, the lattice host is crucial for providing the excitation in from of free electrons and holes. In this respect, the actual lattice site Eu occupies in the host lattice, i.e. in GaN, is important. A large fraction of Eu atoms are typically inactive which must be attributed to their lattice site and local environment. GaN films implanted with Eu to concentrations of {approx}10{sup 18} cm{sup -3} were subjected to a highly directed beam of 500 keV He{sup +} at a dose of 5 x 10{sup 14} cm{sup -2}. By means of a shadow mask, irradiated and unexposed regions lie very close to each other on the same sample. We used optical and structural analysis to identify the exerted radiation damage. At the full radiation dose, photoluminescence intensity has decayed to {approx}0.01 of its initial value. From the dose dependence of the radiation decay we previously concluded, that this decay is in part due to the destruction of radiative Eu sites [J.W. Tringe, unpublished (2006)]. Along the transition from virgin to irradiated material we analyze the accumulated damage in terms of surface morphology (atomic force microscopy), crystallinity (x-ray diffraction), and phonon dispersion using micro-Raman spectroscopy. In addition to the well-studied E{sub 2}(high) mode, two new vibrational modes at 659 cm{sup -1} and 201 cm{sup -1} were observed in the Eu implanted and annealed sample, prior to He{sup +} irradiation. These modes are either remnants of the implantation damage or related to the Eu impurity. As such they can be indicative of the actual lattice site the Eu atom resides on. After irradiation, broad Raman modes at 300 cm-1 are being observed. This band indicates disorder activated Raman scattering (DARS) due to the radiation damage. An additional narrow mode appears at 672 cm{sup -1}, which can possibly be due to a nitrogen vacancy related vibrational mode. The continuous transition from irradiated to un-irradiated sample allows the direct evolution of radiation damage and its coordinated effects in structural, optical and vibrational properties. By its systematic correlation we anticipate to be able to elucidate the Eu lattice interaction and the processes of radiation damage.

Senawiratne, J; Xia, Y; Detchprohm, T; Tringe, J W; Stevens, C G; Wetzel, C

2006-06-20T23:59:59.000Z

483

Radiation, Matter and Energy What is light?  

E-Print Network [OSTI]

Radiation, Matter and Energy #12;What is light? #12;Light is an electromagnetic wave #12;Light the visible spectrum, blue light has higher energy than red light Within the electromagnetic spectrum, X-rays have the highest energy, followed by UV, visible light, IR, and radio Remember: Light is just one form

Shirley, Yancy

484

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells  

Science Journals Connector (OSTI)

Dry etch induced damage of GaAs/InGaAs/GaAs heterostructures in an electron cyclotron resonance (ECR) argon discharge has been investigated as a function of additional radio frequency self?biasing of the sample and process pressure in argon ECR discharges. We used depth resolved photoluminescence measurements to determine the influence of the etch process on the samples. We observe a decreasing damage depth for smaller bias voltages reaching its lowest value of 1.7 nm at 20 V bias and a pressure of 0.15 Pa. For lower pressures we observe a strong increase of the damage which is attributed predominantly to high energetic vacuum ultraviolet radiation from the ECR region.

T. Bickl; B. Jacobs; J. Straka; A. Forchel

1993-01-01T23:59:59.000Z

485