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Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Sun Prairie Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Sun Prairie Water & Light Comm Sun Prairie Water & Light Comm Jump to: navigation, search Name Sun Prairie Water & Light Comm Place Wisconsin Utility Id 18312 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Area Lighting 1000w Halide existing poles Lighting Area Lighting 1000w Halide provided poles Lighting Area Lighting 100w HPS existing poles Lighting Area Lighting 100w HPS provided poles Lighting Area Lighting 150w HPS existing poles Lighting

2

Newnan Wtr, Sewer & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Newnan Wtr, Sewer & Light Comm Newnan Wtr, Sewer & Light Comm Jump to: navigation, search Name Newnan Wtr, Sewer & Light Comm Place Georgia Utility Id 13547 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Power Rates Commercial Large Power Service Industrial Residential Power Rates Residential Security Lighting - 100 Watt (Decorative) Lighting Security Lighting - 1000 Watt (Directional Flood) Lighting Security Lighting - 1000 Watt (Metal Halide Flood) Lighting Security Lighting - 100W (Cobra or Open) Lighting

3

Albany Water Gas & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Water Gas & Light Comm Water Gas & Light Comm Jump to: navigation, search Name Albany Water Gas & Light Comm Place Georgia Utility Id 230 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Demand Commercial Commercial Non-Demand Commercial Large Commercial Demand Commercial Residential Residential Security Lights 1000 Watt Metal Halide Metal Pole Lighting Security Lights 1000 Watt Metal Halide Wooden Pole Lighting Security Lights 150 HPSV Fixtures Metal Pole Lighting Security Lights 150 HPSV Fixtures Wooden Pole Lighting

4

Moose Lake Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Lake Water & Light Comm Lake Water & Light Comm Jump to: navigation, search Name Moose Lake Water & Light Comm Place Minnesota Utility Id 12897 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 2-250HPS-FRO Lighting 250 HPS ELEOLY Lighting 3-250 HPS Lighting 4-250 HPS Lighting 400 HPS Rent Lighting BEST OIL CO Commercial BIKE TRAIL Commercial CIP Commercial Commercial Demand Commercial Commercial Electricity Commercial Demand 1 Phase Industrial

5

Glencoe Light & Power Comm | Open Energy Information  

Open Energy Info (EERE)

Glencoe Light & Power Comm Glencoe Light & Power Comm Jump to: navigation, search Name Glencoe Light & Power Comm Place Minnesota Utility Id 7292 Utility Location Yes Ownership M NERC Location MRO ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Area/Security Lighting-175 Watt Lighting Area/Security Lighting-400 Watt Lighting Large Industrial Service-Primary Voltage Industrial Large industrial Service-secondary volatge Industrial Residential Service Residential

6

Paragould Light & Water Comm | Open Energy Information  

Open Energy Info (EERE)

Paragould Light & Water Comm Paragould Light & Water Comm Jump to: navigation, search Name Paragould Light & Water Comm Place Arkansas Utility Id 14446 Utility Location Yes Ownership M NERC Location SPP NERC SPP Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Single Phase Commercial General Three Phase Commercial Industrial Industrial Residential Residential Security Lighting 100 W HPS Lighting

7

Waterloo Light & Water Comm | Open Energy Information  

Open Energy Info (EERE)

Waterloo Light & Water Comm Waterloo Light & Water Comm Jump to: navigation, search Name Waterloo Light & Water Comm Place Wisconsin Utility Id 20182 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service Three Phase Commercial General Service Single Phase Commercial General Service TOU Single Phase Commercial General Service TOU Three Phase Commercial Industrial TOU Industrial Large Power TOU Industrial Renewable Energy Rider 1 Commercial Renewable Energy Rider 2 Industrial

8

Cedarburg Light & Water Comm | Open Energy Information  

Open Energy Info (EERE)

Cedarburg Light & Water Comm Cedarburg Light & Water Comm Jump to: navigation, search Name Cedarburg Light & Water Comm Place Wisconsin Utility Id 3208 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service - Regular Rate - Single Phase Commercial General Service - Regular rate - Three Phase Commercial General Service Optional Time-of-Day Rate - Single Phase 7am-7pm Commercial General Service Optional Time-of-Day Rate - Single Phase 8am-8pm Commercial

9

Brodhead Water & Lighting Comm | Open Energy Information  

Open Energy Info (EERE)

Brodhead Water & Lighting Comm Brodhead Water & Lighting Comm Jump to: navigation, search Name Brodhead Water & Lighting Comm Place Wisconsin Utility Id 2273 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service - GS-1 - Single Phase Commercial General Service - GS-1 Three Phase Commercial General-OTD 1-Three Phase Commercial General-OTD- Single Phase Commercial Industrial Power Time of day CP-3 above 1,000kW Demand Primary Metering and Transformer Discount Industrial Industrial Power Time of day CP-3 above 1,000kW Demand Industrial

10

North Branch Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

North Branch Water & Light Comm North Branch Water & Light Comm Place Minnesota Utility Id 13681 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Large General Service Industrial Residential Residential Residential- Seasonal Residential Average Rates Residential: $0.1250/kWh Commercial: $0.1140/kWh Industrial: $0.0750/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a"

11

Oconto Falls Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Oconto Falls Water & Light Comm Oconto Falls Water & Light Comm Place Wisconsin Utility Id 13965 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service Industrial Cp-1 Small Power Service Primary Metering Discount with Parallel Generation(20kW or less) Industrial Cp-1 Small Power Service Primary Metering Discount Industrial Cp-1 Small Power Service with Parallel Generation(20kW or less) Industrial Cp-1 TOD Small Power Optional Time-of-Day Service Primary Metering Discount

12

comm022  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Comm 22.10 3 Comm 22.10 DEPARTMENT OF COMMERCE Unofficial Text (See Printed Volume). Current through date and Register shown on Title Page. Register, March, 2009, No. 639 Chapter Comm 22 ENERGY CONSERVATION Subchapter I - Scope and Application Comm 22.01 Scope. Comm 22.02 Application. Subchapter II - Definitions Comm 22.10 Definitions. Subchapter III - Insulation Materials and Installation Comm 22.20 Basic requirements. Comm 22.21 Protection of insulation. Subchapter IV - Dwelling Thermal Envelope Comm 22.30 General design requirements. Comm 22.31 Prescriptive insulation and fenestration criteria. Comm 22.32 Specific insulation requirements. Comm 22.33 Slab floors. Comm 22.34 Crawl spaces. Comm 22.35 Thermally isolated sunrooms. Comm 22.36 Fenestration. Comm 22.37 Air leakage. Comm 22.38

13

COMM REF  

Office of Legacy Management (LM)

4 4 COMM REF _ ADMIN RCD _ TECHNICAL SERVICES DIVISION (TSD) BACKFIT (Documents dated prior to 1 November 1988) FUSRAP COMMUNICATIONS DISTRIBUTION DOEJORO TECHNICAL SERVICES DIVISION (CE-53) BECHTEL NATIONAL., INC. - JOB 14501 RESPONSE TRACKING INFORMAnON I lOWED BY: (ORG) I TARGET DATE I I CLOSING CCN COMPL DATE I CLOSING REF SECONDARY: I I OWED TO: lOWED BY: (ORG) I / I I I TARGET DATE I CLOSING CCN COMPL DATE CLOSING REF _ _~_.::..:~ TO_---i!on~/:....:.$uT'__ COMM DATaO..8//3/il ADDR CODE I I I I CLOSES CCN WBS _~/_=I.!>_.:.../ __ ......!/:....l>.:.._.....¥'__ _ NUMBER ST SUBJECT CODE If~ 0 DOE FILE NO. _ AFFECTED DOCUMENT &0 tA59i< c:eN:f:I: ~~~..:lII...3o...3lo...3~~~:lo..3..~..:lII...3o...3lo...3~~~:lo..3..~.3o..Jl,..JIrt..3I~~~~:lo..3..~.JIo.:CCN _

14

passivation of InGaN/GaN nanopillar light emitting diodes.  

E-Print Network (OSTI)

??Recently, InGaN/GaN based blue light emitting diodes (LEDs) have become widely available commercially, but their efficiency is reduced due to the quantum confined Stark effect (more)

Choi, Won

2013-01-01T23:59:59.000Z

15

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes...

16

Mohawk Municipal Comm | Open Energy Information  

Open Energy Info (EERE)

Municipal Comm Municipal Comm Jump to: navigation, search Name Mohawk Municipal Comm Place New York Utility Id 12759 Utility Location Yes Ownership M NERC Location NPCC Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Industrial Rate Industrial Large Commercial Commercial Public Street Lighting Lighting Security Lighting 150 w lamp Lighting Security Lighting 175 w lamp Lighting Security Lighting 250 w lamp Lighting Security Lighting 400 w lamp Lighting Single-Phase Residential Residential Small Commercial Business Commercial Average Rates Residential: $0.0366/kWh

17

Williamstown Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Williamstown Utility Comm Williamstown Utility Comm Jump to: navigation, search Name Williamstown Utility Comm Place Kentucky Utility Id 20731 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes ISO MISO Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 100 Watt High Pressure Sodium Area Light Lighting 150 Watt High Pressure Sodium Floodlight Lighting 175 Watt Mercury Vapor Area Light Lighting 250 Watt High Pressure Sodium Area Light Lighting 250 Watt High Pressure Sodium Floodlight Lighting 400 Watt High Pressure Sodium Area Light Lighting

18

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

19

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures  

E-Print Network (OSTI)

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high materials for green, blue, and UV light emitting diodes (LED) [1-2]. It is known that huge piezoelectric

Wetzel, Christian M.

20

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells  

E-Print Network (OSTI)

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells Shunfeng Li Cubic InGaN/GaN multi-quantum-wells MQWs with high structural and optical quality are achieved by utilizing freestanding 3C-SiC 001 substrates and optimizing InGaN quantum well growth. Superlattice peaks up

As, Donat Josef

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Corbin City Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Corbin City Utilities Comm Corbin City Utilities Comm Jump to: navigation, search Name Corbin City Utilities Comm Place Kentucky Utility Id 4341 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png LGS-1 Large General Service Industrial LGS-2 Large General Srvice V2 Industrial RS-1 Residential Service Residential SGS-1 Small General Service Commercial SLS-1 Security Lighting Service-100 Watt Open Bottom Lighting SLS-1 Security Lighting Service-250 Watt Cobra Lighting SLS-1 Security Lighting Service-250 Watt Directional Flood Lighting

22

Preston Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Preston Public Utilities Comm Place Minnesota Utility Id 15348 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png All Electric Residential Area of Security Lighting- (175W Mercury) Lighting Area of Security Lighting- (400W Lucalox) Lighting Area of Security Lighting- (400W Mercury) Lighting Commercial All Electric- Rate 27 Commercial Commercial All Electric- Rate 28 Commercial

23

Greenville Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Utilities Comm Utilities Comm Jump to: navigation, search Name Greenville Utilities Comm Place North Carolina Utility Id 7639 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes ISO Other Yes Activity Transmission Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png County, Municipal, or Housing Authority Outdoor Lighting- 175W Mercury Vapor Lighting County, Municipal, or Housing Authority Outdoor Lighting- 250W Mercury Vapor Lighting County, Municipal, or Housing Authority Outdoor Lighting- 250W Sodium Vapor

24

Hibbing Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Hibbing Public Utilities Comm Hibbing Public Utilities Comm Jump to: navigation, search Name Hibbing Public Utilities Comm Place Minnesota Utility Id 8543 Utility Location Yes Ownership M NERC Location MRO NERC FRCC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png -POWER SERVICE Commercial Commercial Security Lighting Rate - 100 Watt H.P.S Lighting Commercial Security Lighting Rate - 250 Watt H.P.S Lighting General Service - Single Phase Commercial General Service - Three Phase Commercial

25

Aitkin Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Aitkin Public Utilities Comm Aitkin Public Utilities Comm Jump to: navigation, search Name Aitkin Public Utilities Comm Place Minnesota Utility Id 174 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Industrial Industrial Residential (Peak 08:00 a.m. - 12:00 p.m.) Residential Residential (Peak 12:00 p.m. - 5:00 p.m.) Residential Residential (Peak 5:00 p.m. - 9:00 p.m.) Residential Residential Dual Fuel Residential Security Lights 150 Watt Lighting Security Lights 250 Watt Lighting

26

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN  

E-Print Network (OSTI)

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN Christian in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Detchprohm, Theeradetch

27

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network (OSTI)

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

28

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network (OSTI)

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

29

Greenwood Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Greenwood Utilities Comm Place Mississippi Utility Id 7651 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial All Electric - Single Phase Commercial Commercial All Electric - Three Phase Commercial Cotton Gin Power Commercial General Lighting and Power - Single Phase Commercial General Lighting and Power - Three Phase Commercial Large General Service Commercial

30

Springfield Public Utils Comm | Open Energy Information  

Open Energy Info (EERE)

Springfield Public Utils Comm Springfield Public Utils Comm Place Minnesota Utility Id 17836 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Power Commercial Residential Residential Residential with Electric Heating Residential Street Lighting Lighting Average Rates Residential: $0.1180/kWh Commercial: $0.0998/kWh Industrial: $0.0979/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Springfield_Public_Utils_Comm&oldid=411601

31

New Prague Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name New Prague Utilities Comm Place Minnesota Utility Id 13480 Utility Location Yes Ownership M NERC Location MRO NERC RFC Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial - Single Phase Commercial Commercial - Three Phase Commercial Industrial Industrial Interruptible Commercial Large Industrial Industrial Residential service rates Residential Security Lights - Rental Lighting Small Industrial Industrial

32

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network (OSTI)

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

33

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu  

E-Print Network (OSTI)

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photo- luminescence, m's overall power efficiency. Linearly polarized light can be efficiently generated in GaInN/GaN-based light-emitting

Wetzel, Christian M.

34

Adrian Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Public Utilities Comm Public Utilities Comm Jump to: navigation, search Name Adrian Public Utilities Comm Place Minnesota Utility Id 150 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Large Commercial - LC Commercial Residential - RL Residential Residential Electric Heat Residential Security Lights - SL Commercial Small Commercial - SC Single-Phase Commercial Small Commercial - SC Three-Phase Commercial Average Rates Residential: $0.0955/kWh Commercial: $0.0980/kWh Industrial: $0.1120/kWh References

35

Redwood Falls Public Util Comm | Open Energy Information  

Open Energy Info (EERE)

Public Util Comm Public Util Comm Jump to: navigation, search Name Redwood Falls Public Util Comm Place Minnesota Utility Id 15793 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Area lighting 100 watt Lighting Area lighting 1000 watt Lighting Area lighting 150 watt Lighting Area lighting 250 watt Lighting Area lighting 400 watt Lighting Industrial service rate Industrial Large commercial service rate Commercial

36

Princeton Public Utils Comm | Open Energy Information  

Open Energy Info (EERE)

Princeton Public Utils Comm Princeton Public Utils Comm Place Minnesota Utility Id 15387 Utility Location Yes Ownership M NERC Location MAPP NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 100W High Pressure Sodium Lighting 1500W Quartz Commercial 250W High Pressure Sodium Lighting 250W Spot Commercial 400W High Pressure Sodium Lighting Large General Service Commercial Large General Service- Time of Use Commercial Large Power Service Industrial Large Power Service- Time of Use Industrial Residential Service Residential

37

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution  

E-Print Network (OSTI)

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution Aurélien David of photonic crystal PhC -assisted gallium nitride light-emitting diodes LEDs to the existence of unextracted a promising but challenging solution towards efficient solid-state lighting. Conventional GaN-based light-emitting

Recanati, Catherine

38

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurlien David,a  

E-Print Network (OSTI)

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurélien David,a Tetsuo Fujii 2005; published online 16 February 2006 We study GaN-based light emitting diodes incorporating light- emitting diodes LEDs , as they could extract the emitted light otherwise trapped inside

Recanati, Catherine

39

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Conference Proceedings (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung, Keun Man Song, Young Su Choi, Hyeong-Ho Park, Hyun-Beom Shin, Ho Kwan Kang, Jaejin Lee

2013-01-01T23:59:59.000Z

40

Ultra High p-doping Material Research for GaN Based Light Emitters  

Science Conference Proceedings (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface  

E-Print Network (OSTI)

High efficiency light emitting diode with anisotropically etched GaN- sapphire interface M. H. Lo and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturingGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic

42

Sleepy Eye Public Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Eye Public Utility Comm Eye Public Utility Comm Jump to: navigation, search Name Sleepy Eye Public Utility Comm Place Minnesota Utility Id 17320 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Electric Heat Residential Industrial Industrial Large General Commercial Residential Residential Security Lighting- 150W Lighting Security Lighting- 175W Lighting Security Lighting- 250W Lighting

43

Grand Rapids Public Util Comm | Open Energy Information  

Open Energy Info (EERE)

Rapids Public Util Comm Rapids Public Util Comm Jump to: navigation, search Name Grand Rapids Public Util Comm Place Minnesota Utility Id 7489 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png CITY COMMERCIAL Commercial CITY LIGHT & POWER Lighting CITY RESIDENTIAL Residential CONTROLLED WATER HEATING (CITY) Commercial CONTROLLED WATER HEATING (RURAL) Commercial ENTERTAINMENT LIGHTING RATE (CITY) Lighting ENTERTAINMENT LIGHTING RATE (RURAL) Lighting INDUSTRIAL (CITY) Industrial

44

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

45

Confocal microphotoluminescence of InGaN-based light-emitting diodes Koichi Okamoto,a  

E-Print Network (OSTI)

for conventional incandescent and fluorescent light bulbs.5 However, luminous efficacies of commercial white LEDsConfocal microphotoluminescence of InGaN-based light-emitting diodes Koichi Okamoto,a Akio Kaneta-well-structured light-emitting diodes LEDs with a yellow-green light 530 nm and an amber light 600 nm was measured

Okamoto, Koichi

46

Lighting Enhancement of GaN LEDs by Applying p-Type Ni(P):SnO2 ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, Materials Science & Technology 2013. Symposium, Multifunctional Oxides. Presentation Title, Lighting Enhancement of GaN LEDs...

47

Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes  

E-Print Network (OSTI)

Keywords: GaInN/GaN Light emitting diode temperature Micro-Raman Photoluminescence Electroluminescence well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescenceJunction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting

Wetzel, Christian M.

48

Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces  

SciTech Connect

InGaN-based light emitting diodes (LEDs) with a top pattern-nanoporous p-type GaN:Mg surface were fabricated by using a photoelectrochemical (PEC) process. The peak wavelengths of electroluminescence (EL) and operating voltages were measured as 461.2 nm (3.1 V), 459.6 nm (9.2 V), and 460.1 nm (3.3 V) for conventional, nanoporous, and pattern-nanoporous LEDs using 20 mA operation current. The EL spectrum of the nanoporous LED had a larger blueshift phenomenon as a result of a partial compression strain release in the InGaN active layer through the formation of a top nanoporous surface. The light output power had 12.1% and 26.4% enhancements for the nanoporous and the pattern-nanoporous LEDs compared with conventional LEDs. The larger operating voltage of the nanoporous LED was due to the non-ohmic contact on the PEC treated p-type GaN:Mg surface. By using a pattern-nanoporous p-type GaN:Mg structure, the operating voltage of the pattern-nanoporous LED was reduced to 3.3 V. A lower compression strain in the InGaN active layer and a higher light extraction efficiency at the top nanoporous surface were observed in pattern-nanoporous LEDs for higher efficiency nitride-based LED applications.

Yang, C.C.; Lin, C.F.; Lin, C.M.; Chang, C.C.; Chen, K.T.; Chien, J.F.; Chang, C.Y. [Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

2008-11-17T23:59:59.000Z

49

Wisconsin Rapids W W & L Comm | Open Energy Information  

Open Energy Info (EERE)

Rapids W W & L Comm Rapids W W & L Comm Jump to: navigation, search Name Wisconsin Rapids W W & L Comm Place Wisconsin Utility Id 20862 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Athletic Field Lighting Service Lighting General Service Three Phase Commercial General Service Single Phase Commercial General Service TOU Single Phase (8am to 8pm) Commercial General Service TOU Single Phase(7am to 7pm) Commercial General Service TOU Single Phase(9 am to 9pm) Commercial

50

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

51

Electron Beam-induced Light Emission and Transport in GaN Nanowires  

SciTech Connect

We report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport, limiting the extent to which light is confined. Optical interconnects are powerful components presently applied for high bandwidth communications among high-performance processors. Future circuits based on nanometer-scale components could similarly benefit from optical information transfer among processing blocks. Strong light channeling (and even lasing) has been observed in GaN nanowires, suggesting that these structures could be useful building blocks in a future networked electro-optical processor. However, the extent to which defects and microstructure control optical performance in nanowire waveguides has not been measured. In this study, we use electron microscopy and in-situ modification of individual nanowires to begin to correlate wire structure with light transport efficiency through GaN nanowires tens of microns long.

Tringe, J W; MoberlyChan, W J; Stevens, C G; Davydov, A V; Motayed, A

2006-05-10T23:59:59.000Z

52

Photonic crystal laser lift-off GaN light-emitting diodes Aurlien David,a  

E-Print Network (OSTI)

Photonic crystal laser lift-off GaN light-emitting diodes Aurélien David,a Tetsuo Fujii,b Brendan March 2006 We report on the fabrication and study of laser lift-off GaN-based light-emitting diodes-state lighting. However, as is the case for any light-emitting diode LED , light tends to be trapped in the high

Recanati, Catherine

53

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes  

SciTech Connect

We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)] [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2013-01-28T23:59:59.000Z

54

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes  

E-Print Network (OSTI)

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes]. The detail of the model for current injection model for quantum well heterostructure is described in Ref. [18 Keywords: III-Nitride InGaN QWs Light-emitting diodes Efficiency-droop a b s t r a c t Current injection

Gilchrist, James F.

55

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes  

SciTech Connect

Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1-3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

Sizov, V. S., E-mail: vsizov@mail.ioffe.ru; Tsatsulnikov, A. F.; Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Cherkashin, N. A. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Hytch, M. J. [National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France); Nikolaev, A. E. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Mintairov, A. M.; He Yan; Merz, J. L. [University of Notre Dame, EE Department (United States)

2010-07-15T23:59:59.000Z

56

Tuntutuliak Comm Services Assn | Open Energy Information  

Open Energy Info (EERE)

Tuntutuliak Comm Services Assn Tuntutuliak Comm Services Assn Jump to: navigation, search Name Tuntutuliak Comm Services Assn Place Alaska Utility Id 19267 Utility Location Yes Ownership C NERC Location AK Operates Generating Plant Yes Activity Generation Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png All Other Community Facilities Residential Residential Residential Washeteria Residential Average Rates Residential: $0.7200/kWh Commercial: $0.6820/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Tuntutuliak_Comm_Services_Assn&oldid=411884

57

Lanesboro Public Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Lanesboro Public Utility Comm Lanesboro Public Utility Comm Jump to: navigation, search Name Lanesboro Public Utility Comm Place Minnesota Utility Id 10685 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial- Phase 2 Commercial Commercial- Three Phase Commercial Residential Residential Average Rates Residential: $0.1140/kWh Commercial: $0.1090/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Lanesboro_Public_Utility_Comm&oldid=410975

58

Truman Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Truman Public Utilities Comm Truman Public Utilities Comm Jump to: navigation, search Name Truman Public Utilities Comm Place Minnesota Utility Id 19237 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Residential: $0.1360/kWh Commercial: $0.1410/kWh Industrial: $0.1150/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Truman_Public_Utilities_Comm&oldid=411881"

59

A search for spin-polarized photoemission from GaAs using light with orbital angular momentum  

Science Conference Proceedings (OSTI)

Laser light with photon energy near the bandgap of GaAs and with different amounts of orbital angular momentum was used to produce photoemission from unstrained GaAs. The degree of electron spin polarization was measured using a micro-Mott polarimeter and found to be consistent with zero with an upper limit of ~3% for light with up to 5{bar h} of orbital angular momentum. In contrast, the degree of spin polarization was 32.32 1.35% using circularly-polarized laser light at the same wavelength, which is typical of bulk GaAs.

Nathan Clayburn, James McCarter, Joan Dreiling, Bernard Poelker, Dominic Ryan, Timothy Gay

2013-01-01T23:59:59.000Z

60

Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes  

E-Print Network (OSTI)

of light emitting diodes Ronald A. Arif, Yik-Khoon Ee, and Nelson Tansu Citation: Appl. Phys. Lett. 91 extraction in GaN-based light emitting diodes Appl. Phys. Lett. 100, 061107 (2012) Electrically driven nanopyramid green light emitting diode Appl. Phys. Lett. 100, 061106 (2012) Ultraviolet electroluminescence

Gilchrist, James F.

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
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61

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520525 nm employing graded growth-temperature profile  

E-Print Network (OSTI)

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520­525 nm employing current spreading and light extraction in GaN-based light emitting diodes Appl. Phys. Lett. 100, 061107 (2012) Electrically driven nanopyramid green light emitting diode Appl. Phys. Lett. 100, 061106 (2012

Gilchrist, James F.

62

Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In{sub 0.2}Ga{sub 0.8}N/GaN quantum wells  

SciTech Connect

A procedure for measuring the absorption coefficient for light propagating parallel to the surface of a GaN-based light emitting diode chip on a sapphire substrate is suggested. The procedure implies the study of emission from one end face of the chip as the opposite end face is illuminated with a light emitting diode. The absorption coefficient is calculated from the ratio between the intensities of emission emerging from the end faces of the sapphire substrate and the epitaxial layer. From the measurements for chips based on p-GaN/In{sub 0.2}Ga{sub 0.8}N/n-GaN structures, the lateral absorption coefficient is determined at a level of (23 {+-} 3)cm{sup -1} at a wavelength of 465 nm. Possible causes for the discrepancy between the absorption coefficients determined in the study and those reported previously are analyzed.

Lelikov, Yu. S.; Bochkareva, N. I.; Gorbunov, R. I.; Martynov, I. A.; Rebane, Yu. T.; Tarkin, D. V.; Shreter, Yu. G. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)], E-mail: YShreter@mail.ioffe.ru

2008-11-15T23:59:59.000Z

63

Life tests of Nichia AlGaN/InGaN/GaN blue-light-emitting diodes  

SciTech Connect

We report on results of life testing Nichia NLPB500 blue LEDs in a temperature controlled chamber, with computer automation of equipment operation and data collection. The tests began with 18 newer (Nichia batch 4B0001) and two older (Nichia batch S403024, acquired a year earlier) LEDs, operated at 20 mA continuous wave (CW) and 23{degree}C. Light from each LED was coupled to an optical fiber and fed directly to individual photodetectors. General trend for the 18 newer LEDs was for the output intensity to increase at a faster rate within the first 50 h and then at a slower rate of the remainder of the first test. The output intensity of the two older LEDs increase within the first 50 h then decreased during the remainder of the first 1000 h. All 20 of the LEDs in the first 1000-h test were subjected to a second 1650-h test at 23{degree}C and at currents 20-70 mA CW. Only one LED, an older device, suffered a soft failure during this second test. The remaining LEDs underwent a third test at 30{degree}C and a fourth test at 35{degree}C, all at various currents. We will perform failure analysis.

Helms, C.J.; Berg, N.H.; Barton, D.L.; Osinski, M

1996-03-01T23:59:59.000Z

64

Fairmont Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Public Utilities Comm Public Utilities Comm Jump to: navigation, search Name Fairmont Public Utilities Comm Place Minnesota Utility Id 6151 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png ALL ELECTRIC RATE Industrial COMMERCIAL SERVICE Commercial GENERAL SERVICE Industrial INDUSTRIAL SERVICE Industrial INDUSTRIAL SERVICE - PRIMARY VOLTAGE Industrial RESIDENTIAL HEAT Residential RESIDENTIAL SERVICE Residential RURAL SERVICE Residential

65

Crisp County Power Comm | Open Energy Information  

Open Energy Info (EERE)

Crisp County Power Comm Crisp County Power Comm Jump to: navigation, search Name Crisp County Power Comm Place Georgia Utility Id 4538 Utility Location Yes Ownership P NERC Location SERC NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Retail Marketing Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Agriculture Process Service Commercial Farm Service Commercial Fuel Cost Recovery Schedule- Primary Distribution Commercial Fuel Cost Recovery Schedule- Secondary Distribution Commercial Fuel Cost Recovery Schedule- Transmission Commercial

66

Hawley Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Hawley Public Utilities Comm Hawley Public Utilities Comm Jump to: navigation, search Name Hawley Public Utilities Comm Place Minnesota Utility Id 8307 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 3 PHASE COMMERCIAL ELECTRIC Commercial COMMERCIAL ELECTRIC Commercial ELECTRIC VARIANCE Commercial GENERATOR RATE Commercial GROUND SOURCE HEAT PUMP - RESIDENTIAL Residential LARGE COMMERCIAL ELECTRIC Commercial MINNKOTA WIND SURCHARGE - COMMERCIAL Commercial MINNKOTA WIND SURCHARGE - RESIDENTIAL Residential

67

Barbourville Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Barbourville Utility Comm Barbourville Utility Comm Jump to: navigation, search Name Barbourville Utility Comm Place Kentucky Utility Id 1201 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Activity Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Electric Rate Commercial Large Power Electric Commercial Residential Electric Service Residential Average Rates Residential: $0.0778/kWh Commercial: $0.0757/kWh Industrial: $0.0626/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from

68

Shakopee Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Shakopee Public Utilities Comm Shakopee Public Utilities Comm Jump to: navigation, search Name Shakopee Public Utilities Comm Place Minnesota Website www.ci.shakopee.mn.us/ind Utility Id 16971 Utility Location Yes Ownership M NERC Location MRO Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial service rate Commercial Large general service rate Industrial Large industrial service rate Industrial Residential service rate Residential Residential service rate - senior citizens Residential Average Rates Residential: $0.1080/kWh Commercial: $0.0946/kWh Industrial: $0.0805/kWh

69

Hutchinson Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Hutchinson Utilities Comm Hutchinson Utilities Comm Jump to: navigation, search Name Hutchinson Utilities Comm Place Minnesota Utility Id 9130 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Activity Retail Marketing Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png LARGE GENERAL ELECTRIC SERVICE Industrial LARGE GENERAL ELECTRIC SERVICE - PRIMARY VOLTAGE (CUSTOMER OWNED) Industrial

70

Juneau Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Juneau Utility Comm Place Wisconsin Utility Id 9936 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service between 50kW and 200kW Demand Primary Metering and Transformer Ownership Discount with Parallel Generation(20kW or less) Industrial Cp-1 Small Power Service between 50kW and 200kW Demand Primary Metering and Transformer Ownership Discount Industrial Cp-1 Small Power Service between 50kW and 200kW Demand Primary Metering

71

Easton Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Utilities Comm Utilities Comm Jump to: navigation, search Name Easton Utilities Comm Place Maryland Utility Id 5625 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes RTO PJM Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png LARGE GENERAL SERVICE Commercial LARGE GENERAL SERVICE(Primary Metering) Commercial PRIMARY GENERAL SERVICE Commercial RESIDENTIAL RATE Residential SMALL GENERAL SERVICE Commercial SMALL GENERAL SERVICE(Primary Metering) Commercial

72

Reedsburg Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Reedsburg Utility Comm Reedsburg Utility Comm Jump to: navigation, search Name Reedsburg Utility Comm Place Wisconsin Utility Id 15804 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service Industrial Cp-1 Small Power Service Primary Metering Discount with Parallel Generation(20kW or less) Industrial Cp-1 Small Power Service Primary Metering and Transformer Ownership Discount Industrial Cp-1 Small Power Service Primary Metering and Transformer Ownership

73

Fort Valley Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Utility Comm Utility Comm Jump to: navigation, search Name Fort Valley Utility Comm Place Georgia Utility Id 6617 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Operates Generating Plant Yes Activity Buying Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png COMMERCIAL: #20 Commercial INDUSTRIAL LARGE POWER: #26/28 Industrial INSTITUTIONAL: #14 Commercial Industrial Small Power Industrial RESIDENTIAL: #10 Residential SMALL COMMERCIAL: #22 Commercial Average Rates Residential: $0.0787/kWh Commercial: $0.1030/kWh Industrial: $0.0772/kWh References

74

Bagley Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Bagley Public Utilities Comm Bagley Public Utilities Comm Jump to: navigation, search Name Bagley Public Utilities Comm Place Minnesota Utility Id 1101 Utility Location Yes Ownership M NERC Location MRO Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Electric Commercial Commercial Electric Demand Commercial Commercial Electric Demand Three Phase Commercial Commercial Electric Three Phase Commercial Electric Heat Non Ripple New Residential Electric Heat Non Ripple Old Residential Electric Heat Ripple Plan 1 Residential Electric Heat Ripple Plan 2 Residential

75

Proctor Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Proctor Public Utilities Comm Proctor Public Utilities Comm Jump to: navigation, search Name Proctor Public Utilities Comm Place Minnesota Utility Id 15460 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Electric- Demand Metering Commercial Commercial Electric- Single Phase Commercial Commercial Electric- Three Phase Commercial Residential Electric Residential Residential- Duel Fuel Residential Residential- ETS Residential Average Rates Residential: $0.0866/kWh Commercial: $0.0849/kWh Industrial: $0.0825/kWh

76

Algoma Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Algoma Utility Comm Algoma Utility Comm Jump to: navigation, search Name Algoma Utility Comm Place Wisconsin Utility Id 307 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Controlled Interdepartmental Service Commercial Customer Owner Generation Systems (Greater than 20kW) Industrial General Service - Optional Time-of-Day Single Phase less than 100kW 7am-7pm Industrial General Service - Optional Time-of-Day Single Phase less than 100kW 9am-9pm Industrial General Service - Optional Time-of-Day Single Phase less than 100kW 8am-8pm

77

Orlando Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Orlando Utilities Comm Orlando Utilities Comm (Redirected from OUC) Jump to: navigation, search Name Orlando Utilities Comm Place Florida Utility Id 14610 Utility Location Yes Ownership M NERC Location FRCC NERC FRCC Yes NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Buying Distribution Yes Activity Wholesale Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Firm General Service Demand Primary Service Standby Service Industrial

78

Henderson City Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Henderson City Utility Comm Henderson City Utility Comm Jump to: navigation, search Name Henderson City Utility Comm Place Kentucky Utility Id 8449 Utility Location Yes Ownership M NERC Location serc NERC RFC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Demand Rate Schedule Schedule D Industrial General Service Rate Schedule Schedule GS-Single Phase- Commercial Commercial General Service Rate Schedule Schedule GS-Single Phase- Industrial Industrial General Service Rate Schedule Schedule GS-Three Phase- Commercial

79

Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes  

SciTech Connect

We report metal-assisted electroless fabrication of nanoporous p-GaN to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs). Although it has long been believed that p-GaN cannot be etched at room temperature, in this study we find that Ag nanocrystals (NCs) on the p-GaN surface enable effective etching of p-GaN in a mixture of HF and K{sub 2}S{sub 2}O{sub 8} under ultraviolet (UV) irradiation. It is further shown that the roughened GaN/air interface enables strong scattering of photons emitted from the multiple quantum wells (MQWs). The light output power measurements indicate that the nanoporous LEDs obtained after 10 min etching show a 32.7% enhancement in light-output relative to the conventional LEDs at an injection current of 20 mA without significant increase of the operating voltage. In contrast, the samples etched for 20 min show performance degradation when compared with those etched for 10 min, this is attributed to the current crowding effect and increased surface recombination rate.

Wang Ruijun; Liu Duo; Zuo Zhiyuan; Yu Qian; Feng Zhaobin; Xu Xiangang [State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong 250100 (China)

2012-03-15T23:59:59.000Z

80

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 {mu}m  

Science Conference Proceedings (OSTI)

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 {mu}m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 Degree-Sign C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.

Ye Hong; Song Yuxin; Wang Shumin [Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296 (Sweden); Gu Yi [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Wyandotte Municipal Serv Comm | Open Energy Information  

Open Energy Info (EERE)

Wyandotte Municipal Serv Comm Wyandotte Municipal Serv Comm Place Michigan Utility Id 21048 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png HEATING STEAM RATE Residential HOT WATER DISTRICT HEATING RATE Commercial LARGE GENERAL SERVICE RATE Commercial Commercial LARGE GENERAL SERVICE RATE Commercial (Time-Differentiated Meter) Commercial LARGE GENERAL SERVICE RATE Industrial (Time-Differentiated Meter)

82

Florence Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Florence Utility Comm Florence Utility Comm Jump to: navigation, search Name Florence Utility Comm Place Wisconsin Utility Id 6424 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service between 50kW and 200kW Demand with Parallel Generation (20 kW or less) Industrial Cp-1 Small Power Service between 50kW and 200kW Demand Industrial Cp-1 TOD Small Power Optional Time-of-Day Service between 50kW and 200kW Demand 7am-9pm with Parallel Generation(20 kW or less) Industrial

83

nature materials | VOL 3 | SEPTEMBER 2004 | www.nature.com/naturematerials 601 ince 1993, InGaN light-emitting diodes (LEDs) have been  

E-Print Network (OSTI)

not fulfilled their original promise as solid-state replacements for light bulbs as their light, InGaN light-emitting diodes (LEDs) have been improved and commercialized1,2 , but these devices have and the spontaneous emissionrateinthesemiconductor3­9 ,andleadtotheenhancementof light emission by SP­QW coupling10

Okamoto, Koichi

84

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-Emitting Diodes for Color Conversion  

Science Conference Proceedings (OSTI)

We have demonstrated the fabrication and characterization of hybrid CdSe/ZnS quantum dot (QD)-InGaN blue LEDs. The chemically synthesized red light (lambda = 623 nm) QD solutions with different concentrations were dropped onto the blue InGaN LEDs with ... Keywords: CdSe/ZnS quantum dots, CdSe/ZnS quantum dots (QDs), InGaN quantum well and hybrid LEDs, InGaN quantum well and hybrid light-emitting diodes

Ying-Chih Chen; Chun-Yuan Huang; Yan-Kuin Su; Wen-Liang Li; Chia-Hsien Yeh; Yu-Cheng Lin

2008-07-01T23:59:59.000Z

85

Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures  

SciTech Connect

Amorphous titanium oxide (a-TiO{sub x}:OH) films prepared by plasma-enhanced chemical-vapor deposition at 200 and 25 deg. C are in turn deposited onto the GaN-based light-emitting diode (LED) to enhance the associated light extraction efficiency. The refractive index, porosity, and photocatalytic effect of the deposited films are correlated strongly with the deposition temperatures. The efficiency is enhanced by a factor of {approx}1.31 over that of the uncoated LEDs and exhibited an excellent photocatalytic property after an external UV light irradiation. The increase in the light extraction is related to the reduction in the Fresnel transmission loss and the enhancement of the light scattering into the escape cone by using the graded-refractive-index a-TiO{sub x}:OH film with porous structures.

Liu, D.-S.; Lin, T.-W.; Huang, B.-W.; Juang, F.-S.; Lei, P.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 63201, Taiwan (China); Hu, C.-Z. [Chilin Technology Co. Ltd., Tainan County 71758, Taiwan (China)

2009-04-06T23:59:59.000Z

86

Orlando Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Name Orlando Utilities Comm Place Florida Utility Id 14610 Utility Location Yes Ownership M NERC Location FRCC NERC FRCC Yes NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Buying Distribution Yes Activity Wholesale Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Firm General Service Demand Primary Service Standby Service Industrial Firm General Service Demand Standby Service Industrial

87

Energy distribution of nonequilibrium electrons and optical phonons in GaAs under band-to-band pumping by intense short pulses of light  

SciTech Connect

Deviation from the Fermi distribution of nonequilibrium electrons and distribution of 'hot' optical phonons in GaAs under band-to-band pumping by picosecond pulses of light are calculated.

Altybaev, G. S.; Kumekov, S. E., E-mail: skumekov@mail.ru; Mahmudov, A. A. [Satpaev Kazakh National Technical University (Kazakhstan)

2009-03-15T23:59:59.000Z

88

Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy  

E-Print Network (OSTI)

this paper, we report on the doping characteristics of Si and Mg in the growth of cubic GaN by metalorganic vapor-phase epitaxy (MOVPE). We also report the growth of a p-n diode structure made of cubic GaN, and its characterization by electron-beam-induced-current (EBIC) and current injection measurements.

Hidenao Tanaka Member; Vapor-phase Epitaxy; Atsushi Nakadaira

2000-01-01T23:59:59.000Z

89

Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction  

E-Print Network (OSTI)

have emerged as a reference blue-green solid-state light source. As for any light emitting diode LED

Recanati, Catherine

90

MOCVD growth of In GaP-based heterostructures for light emitting devices  

E-Print Network (OSTI)

In this work, we examine fundamental materials processes in the growth of indium gallium phosphide (InGaP) via metalorganic chemical vapor deposition (MOCVD). In particular, we realize improvements in the epitaxial integration ...

McGill, Lisa Megan, 1975-

2004-01-01T23:59:59.000Z

91

Energy Efficient Lighting Products  

Science Conference Proceedings (OSTI)

... Road Vista, San Diego, CA [200823- 0] Light Laboratory, Inc ... GA. CSA Group, Alpharetta, GA [200732- 0] Cooper Lighting Photometric Laboratory ...

2013-07-26T23:59:59.000Z

92

Influences of excitation-dependent bandstructure changes on InGaN light-emitting diode efficiency  

E-Print Network (OSTI)

Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k\\cdotp equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.

Chow, Weng W

2011-01-01T23:59:59.000Z

93

Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode  

E-Print Network (OSTI)

The changes in excitation dependence of efficiency with temperature is modeled for a wurtzite InGaN light-emitting diode. The model incorporates bandstructure changes with carrier density arising from screening of quantum-confined Stark effect. Bandstructure is computed by solving Poisson and k.p equations in the envelop approximation. The information is used in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach shows the interplay of quantum-well and barrier emissions giving rise to shape changes in efficiency versus current density with changing temperature, as observed in some experiments.

Chow, Weng W

2013-01-01T23:59:59.000Z

94

An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode  

SciTech Connect

We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski-Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.

Mehta, M.; Michaelis de Vasconcellos, S.; Zrenner, A.; Meier, C. [Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Street 100, 33098 Paderborn (Germany); Reuter, D.; Wieck, A. D. [Applied Solid State Physics, Ruhr-University of Bochum, Universitaetsstr. 150, 44780 Bochum (Germany)

2010-10-04T23:59:59.000Z

95

Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes  

SciTech Connect

The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.

Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng; Penn, Samson; Zhao, Hongping; Liu, Guangyu; Li, Xiaohang; Poplawsky, Jonathan

2011-07-14T23:59:59.000Z

96

Public Serv Comm of Yazoo City | Open Energy Information  

Open Energy Info (EERE)

Serv Comm of Yazoo City Serv Comm of Yazoo City Jump to: navigation, search Name Public Serv Comm of Yazoo City Place Mississippi Utility Id 21095 Utility Location Yes Ownership P NERC Location SERC NERC SERC Yes NERC SPP Yes RTO SPP Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Electric - City Commercial Electric - PSC Commercial Electric - Schools Commercial Electric Commercial - Large Commercial Electric Commercial - Seasonal Commercial Electric Commercial - Small Commercial

97

Colorado River Comm of Nevada | Open Energy Information  

Open Energy Info (EERE)

Comm of Nevada Comm of Nevada Jump to: navigation, search Name Colorado River Comm of Nevada Place Nevada Utility Id 4356 Utility Location Yes Ownership S NERC Location WECC NERC WECC Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Buying Distribution Yes Activity Wholesale Marketing Yes Activity Retail Marketing Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Commercial: $0.0656/kWh The following table contains monthly sales and revenue data for Colorado

98

New Ulm Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Ulm Public Utilities Comm Ulm Public Utilities Comm Jump to: navigation, search Name New Ulm Public Utilities Comm Place Minnesota Utility Id 13488 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png INDUSTRIAL SERVICE RATE Industrial LARGE COMMERCIAL SERVICE RATE Commercial MUNICIPAL-CITY SERVICE RATE Commercial MUNICIPAL-PUC SERVICE RATE Commercial RESIDENTIAL SERVICE RATE Residential SMALL COMMERCIAL SERVICE RATE Commercial WHOLE HOUSE HEATING RATE Residential

99

City of Public Works Comm- Fayetteville, North Carolina (Utility Company) |  

Open Energy Info (EERE)

Works Comm- Fayetteville, North Carolina (Utility Company) Works Comm- Fayetteville, North Carolina (Utility Company) Jump to: navigation, search Name Public Works Comm-City of Fayetteville Place North Carolina Utility Id 6235 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes ISO Other Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 108 Medium Power Service Industrial 108 Medium Power Service Primary Discount Industrial 110 Small Power Service Commercial

100

Fitzgerald Wtr Lgt & Bond Comm | Open Energy Information  

Open Energy Info (EERE)

Fitzgerald Wtr Lgt & Bond Comm Fitzgerald Wtr Lgt & Bond Comm Jump to: navigation, search Name Fitzgerald Wtr Lgt & Bond Comm Place Georgia Utility Id 6380 Utility Location Yes Ownership M NERC Location SERC NERC RFC Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Industrial Industrial Residential City Residential Residential Rural Residential Average Rates Residential: $0.1000/kWh Commercial: $0.1140/kWh Industrial: $0.0817/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a"

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Spring Valley Pub Utils Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Spring Valley Pub Utils Comm Place Minnesota Utility Id 17824 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service Commercial Large Commercial (Demand) Commercial Primary Metering Demand Industrial Residential Residential Residential- All Electric Residential Small Commercial (Demand) Commercial Average Rates Residential: $0.1190/kWh Commercial: $0.0964/kWh

102

New Castle Municipal Serv Comm | Open Energy Information  

Open Energy Info (EERE)

New Castle Municipal Serv Comm New Castle Municipal Serv Comm Place Delaware Utility Id 13424 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Space Heating (Grandfathered) Commercial Large General Service Commercial Demand Rate (Primary) Commercial Large General Service Commercial Demand Rate (Secondary) Commercial Medium General Service Commercial Demand Rate Commercial Residential Service Residential Residential Space Heating Residential Small General Service Commercial Non-Demand Rate Commercial

103

Le paysage comme reprsentation spaciale : le paysage viticole comme symbole des indications de provenance des vins des rgions Vale dos Vinhedos, Pinto Bandeira et Monte Belo (Brsil).  

E-Print Network (OSTI)

??Le sujet de cette thse est le paysage dans sa spcificit viticole analyse comme reprsentation spatiale dans le processus de construction de l'espace gographique de (more)

Falcade, Ivanira

2011-01-01T23:59:59.000Z

104

Lighting.  

SciTech Connect

Since lighting accounts for about one-third of the energy used in commercial buildings, there is opportunity to conserve. There are two ways to reduce lighting energy use: modify lighting systems so that they used less electricity and/or reduce the number of hours the lights are used. This booklet presents a number of ways to do both. Topics covered include: reassessing lighting levels, reducing lighting levels, increasing bulb & fixture efficiency, using controls to regulate lighting, and taking advantage of daylight.

United States. Bonneville Power Administration.

1992-09-01T23:59:59.000Z

105

Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density  

SciTech Connect

The study is devoted to theoretical explanation of a decrease in the electroluminescence efficiency as the pump current increases, which is characteristic of light-emitting-diode (LED) heterostructures based on AlInGaN. Numerical simulation shows that the increase in the external quantum efficiency at low current densities J {approx} 1 A/cm{sup 2} is caused by the competition between radiative and nonradiative recombination. The decrease in the quantum efficiency at current densities J > 1 A/cm{sup 2} is caused by a decrease in the efficiency of hole injection into the active region. It is shown that the depth of the acceptor energy level in the AlGaN emitter, as well as low electron and hole mobilities in the p-type region, plays an important role in this effect. A modified LED heterostructure is suggested in which the efficiency decrease with the pump current should not occur.

Rozhansky, I. V., E-mail: igor@quantum.ioffe.ru; Zakheim, D. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

2006-07-15T23:59:59.000Z

106

Lighting  

Energy.gov (U.S. Department of Energy (DOE))

There are many different types of artificial lights, all of which have different applications and uses.Types of lighting include:

107

Lighting  

SciTech Connect

The lighting section of ASHRAE standard 90.1 is discussed. It applies to all new buildings except low-rise residential, while excluding specialty lighting applications such as signage, art exhibits, theatrical productions, medical and dental tasks, and others. In addition, lighting for indoor plant growth is excluded if designed to operate only between 10 p.m. and 6 a.m. Lighting allowances for the interior of a building are determined by the use of the system performance path unless the space functions are not fully known, such as during the initial stages of design or for speculative buildings. In such cases, the prescriptive path is available. Lighting allowances for the exterior of all buildings are determined by a table of unit power allowances. A new addition the exterior lighting procedure is the inclusion of facade lighting. However, it is no longer possible to trade-off power allotted for the exterior with the interior of a building or vice versa. A significant change is the new emphasis on lighting controls.

McKay, H.N. (Hayden McKay Lighting Design, New York, NY (US))

1990-02-01T23:59:59.000Z

108

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network (OSTI)

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Recanati, Catherine

109

Microsoft Word - Comm 21-25Leg ReviewDraft.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

Foundations SECTION 21. Comm 20.24, Table 20.24-6 is amended to read: Table 20.24-6 ASHRAE American Society of Heating, Refrigerating, and Air- conditioning Engineers, Inc....

110

AlGaInN-based light emitting diodes with a transparent p-contact based on thin ITO films  

SciTech Connect

A method for obtaining transparent conductive ITO (indium-tin oxide) films aimed for use in light emitting diodes of the blue spectral range is developed. The peak external quantum efficiency of light-emitting diodes with a p-contact based on the obtained films reaches 25%, while for similar light-emitting diodes with a standard semitransparent metal contact, it is <10%. An observed increase in the direct voltage drop from 3.15 to 3.37 V does not significantly affect the possibility of applying these films in light-emitting diodes since the optical power of light-emitting diodes with a transparent p-contact based on ITO films exceeds that of chips with metal semitransparent p-contacts with a working current of 20 mA by a factor of almost 2.5. Light-emitting diodes with p-contacts based on ITO films successfully withstand a pumping current that exceeds their calculated working current by a factor of 5 without the appearance of any signs of degradation.

Smirnova, I. P., E-mail: irina@quantum.ioffe.ru; Markov, L. K.; Pavlyuchenko, A. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Kukushkin, M. V. [ZAO Innovation Company 'TETIS' (Russian Federation)

2012-03-15T23:59:59.000Z

111

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

112

Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount  

SciTech Connect

Vertical and flip-chip light-emitting diode (LED) chips are compared from the viewpoint of the behavior of current spreading in the active region and the distribution of local temperatures and thermal resistances of chips. AlGaInN LED chips of vertical design are fabricated using Si as a submount and LED flipchips were fabricated with the removal of a sapphire substrate. The latter are also mounted on a Si submount. The active regions of both chips are identical and are about 1 mm{sup 2} in size. It is shown that both the emittance of the crystal surface in the visible range and the distribution of local temperatures estimated from radiation in the infrared region are more uniform in crystals of vertical design. Heat removal from flip-chips is insufficient in regions of the n contact, which do not possess good thermal contact with the submount. As a result, the total thermal resistances between the p-n junction and the submount both for the vertical chips and for flip-chips are approximately 1 K/W. The total area of the flip-chips exceeds that of the vertical design chips by a factor of 1.4.

Markov, L. K., E-mail: l.markov@mail.ioffe.ru; Smirnova, I. P.; Pavlyuchenko, A. S. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kukushkin, M. V.; Vasil'eva, E. D. [ZAO Innovation 'Tetis' (Russian Federation); Chernyakov, A. E. [Russian Academy of Sciences, Science-and-Technology Microelectronics Center (Russian Federation); Usikov, A. S. [De Core Nanosemiconductors Ltd. (India)

2013-03-15T23:59:59.000Z

113

Google, ou comment s'imposer comme un point de passage oblig 1. Introduction  

E-Print Network (OSTI)

Google, ou comment s'imposer comme un point de passage obligé 1. Introduction Chaque jour des centaines de millions d'internautes utilisent Google gratuitement pour effectuer leurs recherches Google est devenu une véritable passerelle entre les ressources Internet et les internautes s'imposant à

Paris-Sud XI, Université de

114

Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes  

SciTech Connect

This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fitting the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.

Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun; Chen, Fu-Rong; Tsai, Chuen-Horng [Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, 300 Taiwan (China); Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China)

2010-07-15T23:59:59.000Z

115

Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection.  

E-Print Network (OSTI)

??The energy band dispersion relations for InGaAsP/InP multi quantum well (MQW) structures were investigated using 8x8 method. In this study, different strain cases in the (more)

Sun, Lu.

2008-01-01T23:59:59.000Z

116

FI St Po Crypto IPS 140 tanley ortal Ga ograph 0-2 Sec Wi-Q ...  

Science Conference Proceedings (OSTI)

... Q Portal Gat ey Wi-Q Port a wireless ga Wi-Q Comm ry 802.15.4 on tested: 3. on tested: 12 tion ... he s the nts. Page 11. ... The PG d lf Test ower-Up ...

2013-06-12T23:59:59.000Z

117

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network (OSTI)

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

118

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

119

Electrically driven nanopyramid green light emitting diode  

Science Conference Proceedings (OSTI)

An electrically driven nanopyramid green light emitting diode(LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch

S.-P. Chang; Y.-C. Chen; J.-K. Huang; Y.-J. Cheng; J.-R. Chang; K.-P. Sou; Y.-T. Kang; H.-C. Yang; T.-C. Hsu; H.-C. Kuo; C.-Y. Chang

2012-01-01T23:59:59.000Z

120

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

122

Worldwide Links of Solid-State Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

semiconductor business news Electronics Design News (EDN) GaN Net.com Laser Focus World LED Journal LED Lighting Tech (PIDA-sponsored) LEDMarketplace.com Lighting.coms Focus...

123

White emitting polyfluorene functionalized with azide hybridized on near-UV light emitting diode  

E-Print Network (OSTI)

White emitting polyfluorene functionalized with azide hybridized on near-UV light emitting diode generation using CdSe/ZnS core-shell nanocrystals hybridized with InGaN/GaN light emitting diodesGaN/conjugated polymer hybrid light-emitting diodes," Appl. Phys. Lett. 70, 2664-2666 (1997). 9. H. V. Demir, S

Demir, Hilmi Volkan

124

Highly efficient blue organic light emitting device using indium-free transparent anode Ga:ZnO with scalability for large area coating  

Science Conference Proceedings (OSTI)

The availability of economically-produced and environmentally-stable transparent conductive oxide (TCO) coatings is critical for the development of a variety of electronic devices requiring transparent electrodes. Such devices include liquid crystal display pixels and organic light emitting diodes (OLEDs),[1, 2] solar cell applications,[3, 4] and electrically heated windows.[5, 6] The materials fulfilling these requirements are usually wide band gap inorganic transparent conductive oxides (TCOs). Tin-doped indium oxide, or ITO, has traditionally been used for electronic TCO applications because of its low resistivity, high work function and transparency. Due to the increasing cost and limited supply of indium and its tendency to migrate in to the device, there has been increasing research interest to substitute ITO with an indium-free material. A number of alternative metal oxides and doped oxides have been evaluated as TCO materials with varying degrees of success.[7, 8] Among these alternatives to ITO, gallium-doped zinc oxide (GZO) [2, 9] and aluminium-doped zinc oxide (AZO) [10, 11] have drawn particular attention. These materials have been demonstrated to have resistivities and transparencies approaching those of the best ITO, low toxicity, and much lower materials cost. Although AZO is attractive as a TCO electrode material, GZO features a greater resistance to oxidation as a result of galliums greater electronegativity compared to Submitted to 2 aluminum.[12, 13

Wang, Liang (Frank); Matson, Dean W.; Polikarpov, Evgueni; Swensen, James S.; Bonham, Charles C.; Cosimbescu, Lelia; Berry, J. J.; Ginley, D. S.; Gaspar, Daniel J.; Padmaperuma, Asanga B.

2010-02-15T23:59:59.000Z

125

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

126

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

be applicable to light sources in fiber-optic communication systems.13 However, there have been no reports intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

127

Nanofabrication of gallium nitride photonic crystal light-emitting diodes  

Science Conference Proceedings (OSTI)

We describe a comparison of nanofabrication technologies for the fabrication of 2D photonic crystal structures on GaN/InGaN blue LEDs. Such devices exhibit enhanced brightness and the possibility of controlling the angular emission profile of emitted ... Keywords: GaN dry-etching, Light-emitting diodes, Nanolithography, Photonic crystals

Ali Z. Khokhar; Keith Parsons; Graham Hubbard; Faiz Rahman; Douglas S. Macintyre; Chang Xiong; David Massoubre; Zheng Gong; Nigel P. Johnson; Richard M. De La Rue; Ian M. Watson; Erdan Gu; Martin D. Dawson; Steve J. Abbott; Martin D. B. Charlton; Martin Tillin

2010-11-01T23:59:59.000Z

128

EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

129

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

130

JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

131

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract--In metal organic vapor phase epitaxy we developed  

E-Print Network (OSTI)

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract-- In metal organic vapor phase epitaxy we developed GaInN/GaN quantum well material suitable for 500 ­ 580 nm light emitting diodes at longer wavelengths. Index Terms-- a-plane GaN, GaInN, Green light emitting diode, m-plane GaN I

Wetzel, Christian M.

132

De la fixation de jauge consideree comme un des beaux arts et de la symetrie de Slavnov qui s'ensuit  

E-Print Network (OSTI)

La fixation de jauge est d\\'efinie comme l'op\\'eration permettant d'exprimer une int\\'egrale sur un espace d'orbite comme int\\'egrale sur le fibr\\'e principal correspondant. Quand la fibre est non compacte cette op\\'eration met en jeu une classe de cohomologie \\`a support compact -ou \\`a d\\'ecroissance rapide- de celle-ci. La sym\\'etrie de Slavnov est l'expression alg\\'ebrique de l'ambiguit\\'e de cette construction.

Raymond Stora

1996-11-15T23:59:59.000Z

133

Photoluminescence study of the 1.047 eV emission in GaN K. Pressela)  

E-Print Network (OSTI)

GaN/ AlGaN blue green light emitting diode, which has a much higher quantum efficiency than the SiC blue light emitting diode, became possible.2 Presently the wide bandgap semi- conductor GaN is intensively. Especially the 1.19 eV is very intense. Thus one can think of developing a light emitting diode in the near

Nabben, Reinhard

134

GaN: Defect and Device Issues  

SciTech Connect

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

1998-11-09T23:59:59.000Z

135

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

136

Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature  

E-Print Network (OSTI)

Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature Yufeng Li1,2 , Wei, photoluminescence and cathodoluminescence of GaInN/GaN multiple quantum well light emitting diode dies are analyzed and efficient pure green light emitting diodes (LEDs) are of high economic value. However, when the emission

Wetzel, Christian M.

137

Light-Light Scattering  

E-Print Network (OSTI)

For a long time, it is believed that the light by light scattering is described properly by the Lagrangian density obtained by Heisenberg and Euler. Here, we present a new calculation which is based on the modern field theory technique. It is found that the light-light scattering is completely different from the old expression. The reason is basically due to the unphysical condition (gauge condition) which was employed by the QED calcualtion of Karplus and Neumann. The correct cross section of light-light scattering at low energy of $(\\frac{\\omega}{m} \\ll 1)$ can be written as $ \\displaystyle{\\frac{d\\sigma}{d\\Omega}=\\frac{1}{(6\\pi)^2}\\frac{\\alpha^4} {(2\\omega)^2}(3+2\\cos^2\\theta +\\cos^4\\theta)}$.

Kanda, Naohiro

2011-01-01T23:59:59.000Z

138

Light-Light Scattering  

E-Print Network (OSTI)

For a long time, it is believed that the light by light scattering is described properly by the Lagrangian density obtained by Heisenberg and Euler. Here, we present a new calculation which is based on the modern field theory technique. It is found that the light-light scattering is completely different from the old expression. The reason is basically due to the unphysical condition (gauge condition) which was employed by the QED calcualtion of Karplus and Neumann. The correct cross section of light-light scattering at low energy of $(\\frac{\\omega}{m} \\ll 1)$ can be written as $ \\displaystyle{\\frac{d\\sigma}{d\\Omega}=\\frac{1}{(6\\pi)^2}\\frac{\\alpha^4} {(2\\omega)^2}(3+2\\cos^2\\theta +\\cos^4\\theta)}$.

Naohiro Kanda

2011-06-03T23:59:59.000Z

139

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

140

LED Lighting  

Energy.gov (U.S. Department of Energy (DOE))

Light-emitting diodes (LEDs) are light sources that differ from more traditional sources of light in that they are semiconductor devices that produce light when an electrical current is applied....

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 ? ? αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

142

K2, Photoluminescence of Bandgap-Graded InGaN Wires Grown by ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

143

II2, GaN/AlN Heterostructures on Vertical {111} Fin Facets of Si (110)  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

144

G3, Improvement of InGaZnO 4 TFT Device Performance on Glass ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

145

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

146

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

147

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network (OSTI)

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

148

2003 Archived Selected Headlines of Solid-State Lighting Headlines...  

NLE Websites -- All DOE Office Websites (Extended Search)

Epistar's AlGaInP LED products willfully infringe on its US Patent 5,008,718, "Light-emitting diode with an electrically conductive window." The company is seeking both monetary...

149

2005 Archived Selected Headlines of Solid-State Lighting Headlines...  

NLE Websites -- All DOE Office Websites (Extended Search)

in Taiwan. The company's first product is MvpLED (Metal Vertical Photon Light Emitting Diode), a GaN-based vertical LED. News item at LIGHTimes October 21, 2005 Former...

150

Stability studies of nanosecond light sources based on blue ultra bright LEDs  

E-Print Network (OSTI)

We present the results of stability studies of nanosecond light sources based on single quantum well (SQW) InGaN/GaN ultra bright blue LEDs. It is shown that the light yield of such light sources and their timing characteristics don't deteriorate even after 10^10 total pulses. The longterm stability of the sources light yield is better than 1%.

Lubsandorzhiev, B K

2004-01-01T23:59:59.000Z

151

Stability studies of nanosecond light sources based on blue ultra bright LEDs  

E-Print Network (OSTI)

We present the results of stability studies of nanosecond light sources based on single quantum well (SQW) InGaN/GaN ultra bright blue LEDs. It is shown that the light yield of such light sources and their timing characteristics don't deteriorate even after 10^10 total pulses. The longterm stability of the sources light yield is better than 1%.

B. K. Lubsandorzhiev; Y. E. Vyatchin

2004-03-01T23:59:59.000Z

152

Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y{sub 2}O{sub 2}S:Er,Yb luminophor  

SciTech Connect

Y{sub 2}O{sub 2}S luminophors doped with Er{sup 3+} and Yb{sup 3+} ions are produced by means of solid-phase synthesis and deposited onto standard AL123A infrared light-emitting diodes. When excited with 940 nm radiation from a light-emitting diode, the structures exhibit intense visible up-conversion luminescence. A maximal brightness of 2340 cd/m{sup 2} of green and red up-conversion luminescence at corresponding wavelengths around 550 and 600 nm is observed for the Y{sub 2}O{sub 2}S compound doped with 2 at % Er{sup 3+} ions and 6 at % Yb{sup 3+} ions. The ratio of the intensity of green (or red) up-conversion luminescence to the intensity of infrared Stokes luminescence increases with increasing applied voltage. The efficiency of visible emission of the light-emitting diode structures is {eta} = 1.2 lm/W at an applied voltage of 1.5 V.

Gruzintsev, A. N., E-mail: gran@ipmt-hpm.ac.ru [Russian Academy of Sciences, Institute of Problems of Microelectronics Technology (Russian Federation); Barthou, C.; Benalloul, P. [Institute des NanoSciences (France)

2008-03-15T23:59:59.000Z

153

Synthesis and luminescence properties of rare earth activated phosphors for near UV-emitting LEDs for efficacious generation of white light  

E-Print Network (OSTI)

Sun, Y. Luo, S. Lu. ?White light emitting diode by using a-silicates for near-UV light emitting diode applications,? J.Park, S.Y. Choi. ?White light-emitting diodes of GaN-based

Han, Jinkyu

2013-01-01T23:59:59.000Z

154

Lighting Techniques  

Science Conference Proceedings (OSTI)

...Lighting is very critical in photography. The specimen should be placed on a background which will not detract from the resolution of the fracture surface. For basic lighting, one spotlight is suggested. The light is then raised or lowered, and

155

Lighting Research Center Lighting Products  

Science Conference Proceedings (OSTI)

... 12) Solid State Lighting Luminaires - Color Characteristic Measurements. [22/S04] IES LM-16:1993 Practical Guide to Colorimetry of Light Sources. ...

2013-07-26T23:59:59.000Z

156

Lighting Group: Light Distribution Systems  

NLE Websites -- All DOE Office Websites (Extended Search)

Retrofit Alternatives to Incandescent Downlights Hotel and Institutional Bathroom Lighting Portable Office Lighting Systems Low Glare Outdoor Retrofit Luminaire LED Luminaires...

157

Outlaw lighting  

SciTech Connect

Demand-side management programs by utilities and the federal government`s Green Lights program have made significant inroads in promoting energy-efficient lighting. But the Energy Policy Act now prohibits certain types of lighting. This article provides analysis to help architects determine new lamp performance compared with older lighting products.

Bryan, H.

1994-12-01T23:59:59.000Z

158

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

159

C. Wetzel et al MRS Internet J. Nitride Semicond. Res. 10, 2 (2005) 1 Development of High Power Green Light Emitting Diode Chips  

E-Print Network (OSTI)

Power Green Light Emitting Diode Chips C. Wetzel and T. Detchprohm Future Chips Constellation Abstract The development of high emission power green light emitting diodes chips using GaInN/GaN multi production-scale implementation of this green LED die process. Keywords: nitrides, light emitting diode

Wetzel, Christian M.

160

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Lighting Controls  

NLE Websites -- All DOE Office Websites (Extended Search)

corridors. The overall range of savings was six to 80 percent. The Advanced Lighting Guidelines On-Line Edition New Buildings Institute 2011 presents a table of lighting energy...

162

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

163

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

164

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

165

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

NLE Websites -- All DOE Office Websites (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

166

Shape the light, light the shape - lighting installation in performance.  

E-Print Network (OSTI)

??This thesis investigates the lighting design theory Light Inside Out, which is the technique of shaping light toward a creation of lighting installation in performance (more)

Yu, Lih-Hwa, 1972-

2010-01-01T23:59:59.000Z

167

Proton damage effects on light emitting diodes  

SciTech Connect

We have studied the effects of 16-MeV proton irradiation on the performance of a variety of light emitting diodes (LED's) emitting between 820 and 1300 nm. Total light output and current were measured at room temperature as a function of forward bias prior to and following a sequence of room temperature 16-MeV proton irradiations. Our results indicate that the relative amount of proton-induced degradation from one LED type to another is similar to that observed for neutron and gamma irradiations. More specifically, the most sensitive device is the amphoterically Si-doped GaAs LED which is characterized by a long preirradiation minority carrier lifetime. The most resistant LEDs are the high radiance GaAlAs (820 nm) and InGaAsP (1300 nm) LEDs. As in the case of Si devices, the degradation rate per irradiating particle fluence is significantly greater for proton irradiation of these LEDs than it is for neutron exposure. Neutron damage data presented herein indicate that the ratio of proton-to-neutron degradation rates can be as high as 100. Lifetime-damage constant products for constant current operation are calculated for each LED type and vary from 1.5 x 10/sup -13/ cm/sup 2//p for the InGaAsP LED to 1.1 x 10/sup -10/ cm/sup 2//p for the amphoterically Si-doped GaAs LED.

Rose, B.H.; Barnes, C.E.

1982-03-01T23:59:59.000Z

168

Lighting Systems  

NLE Websites -- All DOE Office Websites (Extended Search)

Purple LED lamp Purple LED lamp Lighting Systems Lighting research is aimed at improving the energy efficiency of lighting systems in buildings and homes across the nation. The goal is to reduce lighting energy consumption by 50% over twenty years by improving the efficiency of light sources, and controlling and delivering illumination so that it is available, where and when needed, and at the required intensity. Research falls into four main areas: Sources and Ballasts, Light Distribution Systems, Controls and Communications, and Human Factors. Contacts Francis Rubinstein FMRubinstein@lbl.gov (510) 486-4096 Links Lighting Research Group Batteries and Fuel Cells Buildings Energy Efficiency Applications Commercial Buildings Cool Roofs and Heat Islands Demand Response Energy Efficiency Program and Market Trends

169

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure  

SciTech Connect

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2010-09-15T23:59:59.000Z

170

Commercial Lighting and LED Lighting Incentives  

Energy.gov (U.S. Department of Energy (DOE))

Incentives for energy efficient commercial lighting equipment as well as commercial LED lighting equipment are available to businesses under the Efficiency Vermont Lighting and LED Lighting...

171

Nanoengineering for solid-state lighting.  

SciTech Connect

This report summarizes results from a 3-year Laboratory Directed Research and Development project performed in collaboration with researchers at Rensselaer Polytechnic Institute. Our collaborative effort was supported by Sandia's National Institute for Nanoengineering and focused on the study and application of nanoscience and nanoengineering concepts to improve the efficiency of semiconductor light-emitting diodes for solid-state lighting applications. The project explored LED efficiency advances with two primary thrusts: (1) the study of nanoscale InGaN materials properties, particularly nanoscale crystalline defects, and their impact on internal quantum efficiency, and (2) nanoscale engineering of dielectric and metal materials and integration with LED heterostructures for enhanced light extraction efficiency.

Schubert, E. Fred (Rensselaer Polytechnic Institute,Troy, NY); Koleske, Daniel David; Wetzel, Christian (Rensselaer Polytechnic Institute,Troy, NY); Lee, Stephen Roger; Missert, Nancy A.; Lin, Shawn-Yu (Rensselaer Polytechnic Institute,Troy, NY); Crawford, Mary Hagerott; Fischer, Arthur Joseph

2009-09-01T23:59:59.000Z

172

Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the analysis of the potential of GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize three factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the old AM1.5 direct standard spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than {approx}75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.

Friedman, D. J.; Kurtz, S. R.; Geisz, J. F.

2002-05-01T23:59:59.000Z

173

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures  

Science Conference Proceedings (OSTI)

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

Abramkin, D. S.; Putyato, M. A.; Budennyy, S. A.; Gutakovskii, A. K.; Semyagin, B. R.; Preobrazhenskii, V. V.; Shamirzaev, T. S. [A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Lavrentyeva 13, 630090 Novosibirsk (Russian Federation); Kolomys, O. F.; Strelchuk, V. V. [V. E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, Pr. Nauki 41, 03028 Kiev (Ukraine)

2012-10-15T23:59:59.000Z

174

Broadband light-emitting diode  

DOE Patents (OSTI)

A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

Fritz, Ian J. (Albuquerque, NM); Klem, John F. (Sandia Park, NM); Hafich, Michael J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

175

Broadband light-emitting diode  

DOE Patents (OSTI)

A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

Fritz, I.J.; Klem, J.F.; Hafich, M.J.

1998-07-14T23:59:59.000Z

176

Selected Headlines News In Solid-State Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

Headline News | Tracking Reports | Hot Technical Papers | Citation Headline News | Tracking Reports | Hot Technical Papers | Citation Analysis Method | Credits & Disclaimer | Archived Headline News (Links not maintained) SELECTED HEADLINE NEWS This website is not being actively maintained -- see note on homepage. Editor's choice: NOTE: Provision of summaries, mention of specific manufacturers or products, or designation as an "Editor's Choice" item do not constitute an endorsement by Sandia National Laboratories. DOE awards SSL SBIR grants…China to invest $44 million in SSL…NIST researchers make LEDs 7x brighter…DOE announces Round III funding opportunity August 7, 2006 Researchers from National Chiao Tung University in Taiwan have nearly tripled the front side luminance intensity of InGaN-GaN LEDs through "double" roughening both the p-GaN and undoped-GaN surfaces. The team increased the luminance intensities to 133 and 178 mcd for the front and back sides respectively, at 20 mA injection current. Research results were reported as "Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface," Wei Chih Peng and Yew Chung Sermon Wu, Applied Physics Letters, 89, 041116, July 24, 2006. [ News item at CompoundSemiconductor.net ]

177

Northern Lights  

NLE Websites -- All DOE Office Websites (Extended Search)

Northern Lights Northern Lights Nature Bulletin No. 178-A February 6, 1965 Forest Preserve District of Cook County Seymour Simon, President Roland F. Eisenbeis, Supt. of Conservation NORTHERN LIGHTS To a person seeing the Aurora Borealis or "northern lights" for the first time, it is an uncanny awe-inspiring spectacle. Sometimes it begins as a glow of red on the northern horizon, ominously suggesting a great fire, gradually changing to a curtain of violet-white, or greenish-yellow light extending from east to west. Some times this may be transformed to appear as fold upon fold of luminous draperies that march majestically across the sky; sometimes as a vast multitude of gigantic flaming swords furiously slashing at the heavens; sometimes as a flowing crown with long undulating colored streamers fanning downward and outward.

178

General Atomics (GA) Fusion News: A New Spin on Understanding...  

NLE Websites -- All DOE Office Websites (Extended Search)

General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New...

179

Rodefeld Landfill Ga Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

Rodefeld Landfill Ga Biomass Facility Jump to: navigation, search Name Rodefeld Landfill Ga Biomass Facility Facility Rodefeld Landfill Ga Sector Biomass Facility Type Landfill Gas...

180

Solid-State Lighting Issue 19: Scientific Literature (Mid-July...  

NLE Websites -- All DOE Office Websites (Extended Search)

(Japan) Nippon EMC (Japan) Mitsubishi Cable Industries Ltd. (Japan) "A UV light-emitting diode incorporating GaN quantum dots." S Tanaka, JS Lee, P Ramvall, and H Okagawa, in...

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While these samples are representative of the content of NLEBeta,
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181

Solid-State Lighting Issue 11: Scientific Literature (Mid-October...  

NLE Websites -- All DOE Office Websites (Extended Search)

"Suppression of GaInNGaN multi-quantum-well decomposition during growth of light-emitting-diode structure." H Ishikawa et al in Japanese Journal of Applied Physics Part...

182

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

183

Light Organizing/Organizing Light [Light in Place  

E-Print Network (OSTI)

a street through alter nating areas of dark and light, welandscapes, streets and squares. Light summons our spiritfor changing light, both outside rooms (such as streets and

Schwartz, Martin

1992-01-01T23:59:59.000Z

184

Properties of H, O and C in GaN  

DOE Green Energy (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

185

Solid-State Lighting: LED Lighting Facts  

NLE Websites -- All DOE Office Websites (Extended Search)

Market-Based Programs Printable Version Share this resource Send a link to Solid-State Lighting: LED Lighting Facts to someone by E-mail Share Solid-State Lighting: LED Lighting Facts on Facebook Tweet about Solid-State Lighting: LED Lighting Facts on Twitter Bookmark Solid-State Lighting: LED Lighting Facts on Google Bookmark Solid-State Lighting: LED Lighting Facts on Delicious Rank Solid-State Lighting: LED Lighting Facts on Digg Find More places to share Solid-State Lighting: LED Lighting Facts on AddThis.com... LED Lighting Facts CALiPER Program Standards Development Technical Information Network Gateway Demonstrations Municipal Consortium Design Competitions LED Lighting Facts LED lighting facts - A Program of the U.S. DOE DOE's LED Lighting Facts® program showcases LED products for general

186

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

187

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

188

Development of polycrystal GaAs solar cells. Quarterly technical progress report No. 1, January 15-April 30, 1979  

DOE Green Energy (OSTI)

The objective of this program is to develop a thin film GaAs solar cell technology with the potential of yielding cells with 12 to 15% efficiency and to develop thin film growth techniques which are compatible with the low cost production goal of $500/kW-peak. Progress is reported on a study of junction formation in large grain polycrystal GaAs; characterization of the electronic properties of polycrystal GaAs grown by MBE on low cost foreign substrates; optimizing the structure of AlGaAs-GaAs heterojunction Schottky barrier solar cells; and a variety of grain boundary measurements, including Scanning Light Microscopy (SLM), Deep Level Transient Spectroscopy (DLTS), SIMS, and temperature dependent resistivity.

Miller, D.L.; Cohen, M.J.; Harris, J.S. Jr.; Ballantyne, J.; Hoyte, A.; Stefanakos, E.

1979-05-01T23:59:59.000Z

189

Epitaxial Growth of GaN-based LEDs on Simple Sacrificial Substrates  

SciTech Connect

The objective of this project is to produce alternative substrate technologies for GaN-based LEDs by developing an ALD interlayer of Al{sub 2}O{sub 3} on sacrificial substrates such as ZnO and Si. A sacrificial substrate is used for device growth that can easily be removed using a wet chemical etchant leaving only the thin GaN epi-layer. After substrate removal, the GaN LED chip can then be mounted in several different ways to a metal heat sink/reflector and light extraction techniques can then be applied to the chip and compared for performance. Success in this work will lead to high efficiency LED devices with a simple low cost fabrication method and high product yield as stated by DOE goals for its solid state lighting portfolio.

Ian Ferguson; Chris Summers

2009-12-31T23:59:59.000Z

190

Coincident site lattice-matched InGaN on (111) spinel substrates  

Science Conference Proceedings (OSTI)

Coincident site lattice-matched wurtzite (0001) In{sub 0.31}Ga{sub 0.69}N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl{sub 2}O{sub 4} spinel substrate. The coincident site lattice matching condition involves a 30 deg. rotation between the lattice of the InGaN epitaxial layer and the lattice of the spinel. This work describes an alternative approach towards realizing more compositionally homogenous InGaN films with low dislocation density emitting in the ''green gap'' of low efficiency currently observed for semiconductor light emitting diodes (LEDs). This approach could lead to higher efficiency green LEDs presently of great interest for solid-state lighting applications.

Norman, A. G.; Dippo, P. C.; Moutinho, H. R.; Simon, J.; Ptak, A. J. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2012-04-09T23:59:59.000Z

191

Coincident Site Lattice Matched InGaN on (111) Spinel Substrates  

Science Conference Proceedings (OSTI)

Coincident site lattice-matched wurtzite (0001) In{sub 0.31}Ga{sub 0.69}N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl{sub 2}O{sub 4} spinel substrate. The coincident site lattice matching condition involves a 30{sup o} rotation between the lattice of the InGaN epitaxial layer and the lattice of the spinel. This work describes an alternative approach towards realizing more compositionally homogenous InGaN films with low dislocation density emitting in the 'green gap' of low efficiency currently observed for semiconductor light emitting diodes (LEDs). This approach could lead to higher efficiency green LEDs presently of great interest for solid-state lighting applications.

Norman, A. G.; Dippo, P. C.; Moutinho, H. R.; Simon, J.; Ptak, A. J.

2012-04-09T23:59:59.000Z

192

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

DOE Green Energy (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

193

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

194

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

195

Light Computing  

E-Print Network (OSTI)

A configuration of light pulses is generated, together with emitters and receptors, that allows computing. The computing is extraordinarily high in number of flops per second, exceeding the capability of a quantum computer for a given size and coherence region. The emitters and receptors are based on the quantum diode, which can emit and detect individual photons with high accuracy.

Gordon Chalmers

2006-10-13T23:59:59.000Z

196

EK101 Engineering Light Smart Lighting  

E-Print Network (OSTI)

extensively in concert lighting and are finding increased usage in dance lighting because refers to the upstage back curtain (is white or a light color), which can be us for lighting or special Mixer #12;Monitor House speaker Lighting System Control Board: Similar to the sound board, the light

Bifano, Thomas

197

Infrared light sources with semimetal electron injection  

DOE Patents (OSTI)

An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.

Kurtz, Steven R. (Albuquerque, NM); Biefeld, Robert M. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

198

Conference 5739, SPIE International Symposium Integrated Optoelectronic Devices, 22-27 Jan 2005, San Jose, CA Development of high power green light emitting diode dies in  

E-Print Network (OSTI)

, San Jose, CA Development of high power green light emitting diode dies in piezoelectric Ga in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Wetzel, Christian M.

199

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

200

Texas Electric Lighting Report  

NLE Websites -- All DOE Office Websites (Extended Search)

electric lighting electric lighting The SNAP House's lighting design aims for elegant simplicity in concept, use, and maintenance. Throughout the house, soft, ambient light is juxtaposed with bright, direct task lighting. All ambient and most task lighting is integrated directly into the architectural design of the house. An accent light wall between the bedroom and bathroom provides a glowing light for nighttime navigation.

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Light Emitting Diode (LED) Lighting and Systems  

Science Conference Proceedings (OSTI)

This EPRI Technical Update addresses the most promising and unique energy efficient light source light emitting diode (LED) lighting. Business and technical market factors (Chapter 2) explain the upcoming growth of the LED and LED lighting market. Future technical improvements to LEDs and systems are also emphasized. Discussion of the importance of utility involvement in helping their customers make the switch from traditional lighting to LED lighting is provided. LED lighting technologies are covered in...

2007-12-21T23:59:59.000Z

202

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

203

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents (OSTI)

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

204

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

205

UV-Photoassisted Etching of GaN in KOH  

SciTech Connect

The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n - 3x 10^12Gcm-3) GaN are 2 1000 .min-l. The etching is diffusion limited under our conditions with an activation energy of - 0.8kCal.mol-1. The etched surfaces are rough, but retain their stoichiometry. PEC etching is found to selectively reveal grain boundaries in GaN under low light illumination conditions. At high lamp powers the rates increase with sample temperature and the application of bias to the PEC cell, while they go through a maximum with KOH solution molarity. The etching is diffusion-limited, producing rough surface morphologies that are suitable in a limited number of device fabrication steps. The surfaces however appear to remain relatively close to their stoichiometric composition.

Abernathy, C.R.; Auh, K.H.; Cho, H.; Donovan, S.M.; Han, J.; Lambers, E.S.; Pearton, S.J.; Ren F.; Shul, R.J.

1998-11-12T23:59:59.000Z

206

Efficient and Color-Tunable Oxyfluoride Solid Solution Phosphors for Solid-State White Lighting  

Science Conference Proceedings (OSTI)

A solid solution strategy helps increase the efficiency of Ce{sup 3+} oxyfluoride phosphors for solid-state white lighting. The use of a phosphor-capping architecture provides additional light extraction. The accompanying image displays electroluminescence spectra from a 434-nm InGaN LED phosphor that has been capped with the oxyfluoride phosphor.

Im, Won Bin; George, Nathan; Kurzman, Joshua; Brinkley, Stuart; Mikhailovsky, Alexander; Hu, Jerry; Chmelka, Bradley F.; DenBaars, Steven P.; Seshadri, Ram (UCSB)

2012-09-06T23:59:59.000Z

207

Energy and lighting design  

SciTech Connect

A detailed examination of the current energy conservation practices for lighting systems is presented. This first part of a two-part presentation covers the following: energy and lighting design; lighting and energy standards; lighting efficiency factors; light control and photometrics; lighting and the architectural interior; luminaire impact on the environment; basic design techniques; the lighting power budget; and conservation through control.

Helms, R.N.

1979-11-01T23:59:59.000Z

208

Light Emitting Diodes and General Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

Light Emitting Diodes and General Lighting Speaker(s): Martin Moeck Date: August 6, 2009 - 12:00pm Location: 90-3122 We give a short overview on high-power light emitting diodes,...

209

Evaluation of Lighting and Lighting Control Technologies  

Science Conference Proceedings (OSTI)

Energy efficient lighting and lighting controls have been a means to significant energy savings for many facilities around the world. Advances in lighting sources often allow for the conservation of quality of light while providing more flexibility in the control of light. Additionally, advances in core technologies within the lighting marketplace regularly lead to the introduction of new lamps, fixtures and controls. With the rapid introduction of new products and designs, it is important to ...

2013-11-15T23:59:59.000Z

210

Triggering GaAs lock-on switches with laser diode arrays  

Science Conference Proceedings (OSTI)

Many of the applications that require the unique capabilities of Photoconductive Semiconductor Switches (PCSS) demand a compact package. We have been able to demonstrate that GaAs switches operated in the high gain mode called lock-on'' meet the required electrical switching parameters of several such applications using small switch sizes. The only light source that has enough power to trigger a PCSS and is compatible with a small package is a laser diode. This paper will describe the progress that leads to the triggering of high power PCSS switches with laser diodes. Our goal is to switch up to 5 kA in a single shot mode and up to 100 MW repetitively at up to 10 kHz. These goals are feasible since the switches can be used in parallel or in series. Low light level triggering became possible after the discovery of a high electric field, high gain switching mode in GaAs (and later in InP). At electric fields below 3 kV/cm GaAs switches are activated by creation of, at most, only one conduction electron- valence hole pair per photon absorbed in the sample. This linear mode demands high laser power and, after the light is extinguished, the carriers live for only a few nanoseconds. At higher electric fields GaAs behaves as a light activated Zener diode. The laser light generates carriers as in the linear mode and the field induces gain such that the amount of light required to trigger the switch is reduced by a factor of up to 500. The gain continues until the field across the sample drops to a material dependent lock-on field. At this point the switch will carry as much current as, and for as long as, the circuit can maintain the lock-on field. The gain in the switch allows for the use of laser diodes. 8 refs., 11 figs.

Loubriel, G.M.; Helgeson, W.D.; McLaughlin, D.L.; O'Malley, M.W.; Zutavern, F.J. (Sandia National Labs., Albuquerque, NM (USA)); Rosen, A.; Stabile, P.J. (David Sarnoff Research Center, Princeton, NJ (USA))

1990-01-01T23:59:59.000Z

211

Lighting Group: Controls: PIER Lighting Projects  

NLE Websites -- All DOE Office Websites (Extended Search)

PIER Lighting Projects CEC Public Interest Energy Research (PIER) Projects Objective Lighting controls are often expensive, complex, hard to commission properly and difficult to...

212

Architectural Lighting Analysis in Virtual Lighting Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

Architectural Lighting Analysis in Virtual Lighting Laboratory NOTICE Due to the current lapse of federal funding, Berkeley Lab websites are accessible, but may not be updated...

213

Optical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a InGaAs/AlAs resonant tunnelling diode  

E-Print Network (OSTI)

We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band-edge to longer wavelengths via the Franz-Keldysh effect, thus changing the light-guiding characteristics of the waveguide. Low-frequency characterisation of a device shows modulation up to 28 dB at 1565 nm. When dc biased close to the negative differential conductance (NDC) region, the RTD optical waveguide behaves as an electro-absorption modulator integrated with a wide bandwidth electrical amplifier, offering a potential advantage over conventional pn modulators.

Figueiredo, J M L; Stanley, C R; Ironside, C N; McMeekin, S G; Leite, A M P

1999-01-01T23:59:59.000Z

214

Nanoengineering for solid-state lighting.  

SciTech Connect

This report summarizes results from a 3-year Laboratory Directed Research and Development project performed in collaboration with researchers at Rensselaer Polytechnic Institute. Our collaborative effort was supported by Sandia's National Institute for Nanoengineering and focused on the study and application of nanoscience and nanoengineering concepts to improve the efficiency of semiconductor light-emitting diodes for solid-state lighting applications. The project explored LED efficiency advances with two primary thrusts: (1) the study of nanoscale InGaN materials properties, particularly nanoscale crystalline defects, and their impact on internal quantum efficiency, and (2) nanoscale engineering of dielectric and metal materials and integration with LED heterostructures for enhanced light extraction efficiency.

Schubert, E. Fred (Rensselaer Polytechnic Institute,Troy, NY); Koleske, Daniel David; Wetzel, Christian (Rensselaer Polytechnic Institute,Troy, NY); Lee, Stephen Roger; Missert, Nancy A.; Lin, Shawn-Yu (Rensselaer Polytechnic Institute,Troy, NY); Crawford, Mary Hagerott; Fischer, Arthur Joseph

2009-09-01T23:59:59.000Z

215

Detailed Analysis of Temperature Characteristics of InGaP/InGaAs ...  

Science Conference Proceedings (OSTI)

The current-voltage (I-V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. The structures of ...

216

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

217

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw compressors, 30-90 kW / 40-125 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

218

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors ...  

U.S. Energy Information Administration (EIA)

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors, 11-30 kW / 15-40 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

219

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw compressors, 90-160 kW / 125-200 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading ...

220

Bright Lights and Even Brighter Ideas | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Bright Lights and Even Brighter Ideas Bright Lights and Even Brighter Ideas Bright Lights and Even Brighter Ideas July 3, 2013 - 2:04pm Addthis Kim Kisslinger, a researcher at Brookhaven Lab's Center for Functional Nanomaterials seen here with a focused-ion beam instrument, reduced the indium gallium nitride (InGaN) samples to a thickness of just 20 nanometers to prepare them for electron microscopy. | Photo courtesy of Brookhaven National Laboratory. Kim Kisslinger, a researcher at Brookhaven Lab's Center for Functional Nanomaterials seen here with a focused-ion beam instrument, reduced the indium gallium nitride (InGaN) samples to a thickness of just 20 nanometers to prepare them for electron microscopy. | Photo courtesy of Brookhaven National Laboratory. Charles Rousseaux Charles Rousseaux

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

222

GaSb-based Type-I QW LEDs and addressable arrays operated at wavelengths up to 3.66 m  

E-Print Network (OSTI)

Sb-based quantum wells (QW) light emitting diodes (LED) and LED arrays operating at room temperature at wavelengths. Kipshidze, D.Westerfeld, D. Snyder, M.Johnson, G. Belenky, "GaSb-Based Type I Quantum Well Light Emitting Diode Addressable Array Operated at Wavelengths up to 3.66 µm", IEEE Photonics Technol. Lett. 21, 1087

223

Quantized states in homogenous polarized GaInN GaN quantum wells  

E-Print Network (OSTI)

Quantized states in homogenous polarized GaInN GaN quantum wells C. Wetzel1, S. Kamiyama1, H. Amano wells is calculated in a single particle model. The act- ing electric eld in the wells and the band gap-dimensional well layers our approach is based on induction from results obtained at the binary GaN barri- ers

Wetzel, Christian M.

224

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS  

E-Print Network (OSTI)

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS C. Wetzel, T. Takeuchi, H. Amano, and IInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across

Wetzel, Christian M.

225

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

226

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions  

SciTech Connect

Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10{sup 18} cm{sup -3}. The corresponding doping efficiency and hole mobility are approx4.9% and 3.7 cm{sup 2}/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (lambda{sub peak}=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 OMEGA.

Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh [Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2010-03-29T23:59:59.000Z

227

Next Generation Light Source  

Next Generation Light Source Super Thin Light Bulb, Energy Efficient, Long Life, Dimmable, and Uniform Illumination High Entry Barrier 71 ...

228

Optically-pumped UV Lasing from a GaN-based VCSEL  

NLE Websites -- All DOE Office Websites (Extended Search)

Optically-pumped UV Lasing from a GaN-based VCSEL Optically-pumped UV Lasing from a GaN-based VCSEL by J. Han, K. E. Waldrip, J. J. Figiel, S. R. Lee, and A. J. Fischer* Motivation-Compact ultraviolet sources are required for advanced chemical and biological sensors, high density optical storage, and as pump sources for phosphors used in solid-state white lighting. Although GaN-based edge- emitting lasers operating near 400 nm are available commercially, shorter wavelengths as well as other lasing geometries have remained a challenge. In particular, electrically-injected vertical-cavity surface-emitting lasers (VCSELs) have not been demonstrated in the III-Nitrides. VCSELs have unique advantages due to their low cost, compact size, and well- defined circular output beam. Optoelectronic sources based on UV VCSELS will be the

229

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
230

TMS P&GA Wired to Washington  

Science Conference Proceedings (OSTI)

P & GA COMMITTEE HOME ... the connection between MSE and such key U.S. initiatives as national security, energy independence, and economic growth.

231

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

232

First Light  

E-Print Network (OSTI)

The first dwarf galaxies, which constitute the building blocks of the collapsed objects we find today in the Universe, had formed hundreds of millions of years after the big bang. This pedagogical review describes the early growth of their small-amplitude seed fluctuations from the epoch of inflation through dark matter decoupling and matter-radiation equality, to the final collapse and fragmentation of the dark matter on all mass scales above \\~10^{-4} solar masses. The condensation of baryons into halos in the mass range of ~10^5-10^{10} solar masses led to the formation of the first stars and the re-ionization of the cold hydrogen gas, left over from the big bang. The production of heavy elements by the first stars started the metal enrichment process that eventually led to the formation of rocky planets and life. A wide variety of instruments currently under design [including large-aperture infrared telescopes on the ground or in space (JWST), and low-frequency arrays for the detection of redshifted 21cm radiation], will establish better understanding of the first sources of light during an epoch in cosmic history that was largely unexplored so far. Numerical simulations of reionization are computationally challenging, as they require radiative transfer across large cosmological volumes as well as sufficently high resolution to identify the sources of the ionizing radiation. The technological challenges for observations and the computational challenges for numerical simulations, will motivate intense work in this field over the coming decade.

Abraham Loeb

2006-03-14T23:59:59.000Z

233

N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping  

Science Conference Proceedings (OSTI)

Nitrogen-polar III-nitride heterostructures present unexplored advantages over Ga(metal)-polar crystals for optoelectronic devices. This work reports N-polar III-nitride quantum-well ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy that integrate polarization-induced p-type doping by compositional grading from GaN to AlGaN along N-face. The graded AlGaN layer simultaneously acts as an electron blocking layer while facilitating smooth injection of holes into the active region, while the built-in electric field in the barriers improves carrier injection into quantum wells. The enhanced doping, carrier injection, and light extraction indicate that N-polar structures have the potential to exceed the performance of metal-polar ultraviolet light-emitting diodes.

Verma, Jai; Simon, John; Protasenko, Vladimir; Kosel, Thomas; Xing, Huili Grace; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2011-10-24T23:59:59.000Z

234

Lighting | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Lighting Lighting Lighting When you're shopping for lightbulbs, compare lumens and use the Lighting Facts label to be sure you're getting the amount of light, or level of brightness, you want. You can save money and energy while lighting your home and still maintaining good light quantity and quality. Consider energy-efficient lighting options to use the same amount of light for less money. Learn strategies for comparing and buying lighting products and using them efficiently. Featured Lighting Choices to Save You Money Light your home for less money while using the same amount of light. How Energy-Efficient Light Bulbs Compare with Traditional Incandescents Energy-efficient light bulbs are available today and could save you about $50 per year in energy costs when you replace 15 traditional incandescent bulbs in your home.

235

GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LED's  

SciTech Connect

The objective of this project was to develop and then demonstrate the efficacy of a costeffective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this GaN-ready substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded AlxGa1-xN layers on top. Pseudomorphic AlxGa1-xN epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 108 cm-2 while the pseudomorphic LEDs have TDD ? 105 cm-2. The resulting TDD, when grading the AlxGa1-xN layer all the way to pure GaN to produce a GaN-ready substrate, has varied between the mid 108 down to the 106 cm-2. These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

Sandra Schujman; Leo Schowalter

2010-10-15T23:59:59.000Z

236

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

DOE Green Energy (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

237

Price of Elba Island, GA Liquefied Natural Gas Total Imports...  

Annual Energy Outlook 2012 (EIA)

Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet)...

238

Architectural Lighting Analysis in Virtual Lighting Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

Architectural Lighting Analysis in Virtual Lighting Laboratory Architectural Lighting Analysis in Virtual Lighting Laboratory Speaker(s): Mehlika Inanici Date: July 7, 2003 - 12:00pm Location: Bldg. 90 Seminar Host/Point of Contact: Satkartar K. Kinney Virtual Lighting Laboratory is a Radiance-based lighting analysis tool and methodology that proposes transformations in the utilization of computer visualization in lighting analysis and design decision-making. It is a computer environment, where the user has been provided with matrices of illuminance and luminance values extracted from high dynamic range images. The principal idea is to provide the laboratory to the designer and researcher to explore various lighting analysis techniques instead of imposing limited number of predetermined metrics. In addition, it introduces an analysis approach for temporal and spatial lighting

239

New Light Sources for Tomorrow's Lighting Designs  

E-Print Network (OSTI)

The lighting industry is driven to provide light sources and lighting systems that, when properly applied, will produce a suitable luminous environment in which to perform a specified task. Tasks may include everything from office work, manufacturing and inspection to viewing priceless art objects, selecting the right chair for your living room, and deciding which produce item to select for tonight's dinner. While energy efficiency is a major consideration in any new lighting system design, the sacrifice of lighting quality may cost more in terms of lost productivity and user dissatisfaction than can ever be saved on that monthly energy bill. During the past several years, many new light sources have been developed and introduced. These product introductions have not been limited to anyone lamp type, but instead may be found in filament, fluorescent and high intensity discharge lamp families. Manufacturers of light sources have two basic goals for new product development. These goals are high efficiency lighting and improved color rendering properties. High efficiency lighting may take the form of either increasing lamp efficiency (lumens of light delivered per watt of power consumed) or decreasing lamp size, thus making a more easily controlled light source that places light where it is needed. The manufacturer's second goal is to produce lamps that render colors accurately while maintaining high efficiency. This paper will discuss new introductions in light sources and lighting systems and how they may impact the design of luminous environments of the future.

Krailo, D. A.

1986-06-01T23:59:59.000Z

240

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

242

Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.  

SciTech Connect

The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was granted on this program, an additional more 'liquid-like' Sc precursor was evaluated and the nitridation of Sc metals on GaN were investigated. Using the Sc precursor, dopant level quantities of Sc were incorporated into GaN, thereby concluding the growth of ScGaN and YGaN films. Our remaining time during the no-cost extension was focused on pulsed laser deposition of Sc metal films on GaN, followed by nitridation in the MOCVD reactor to form ScN. Finally, GaN films were deposited on the ScN thin films in order to study possible GaN dislocation reduction.

Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

2009-07-01T23:59:59.000Z

243

Lighting Options for Homes.  

SciTech Connect

This report covers many aspects of various lighting options for homes. Types of light sources described include natural light, artificial light, incandescent lamps, fluorescent lamps, and high intensity discharge lamps. A light source selection guide gives the physical characteristics of these, design considerations, and common applications. Color, strategies for efficient lighting, and types of lighting are discussed. There is one section giving tips for various situations in specific rooms. Rooms and types of fixtures are shown on a matrix with watts saved by using the recommended type lighting for that room and room location. A major emphasis of this report is saving energy by utilizing the most suitable, recommended lighting option. (BN)

Baker, W.S.

1991-04-01T23:59:59.000Z

244

Mobile lighting apparatus  

DOE Patents (OSTI)

A mobile lighting apparatus includes a portable frame such as a moveable trailer or skid having a light tower thereon. The light tower is moveable from a stowed position to a deployed position. A hydrogen-powered fuel cell is located on the portable frame to provide electrical power to an array of the energy efficient lights located on the light tower.

Roe, George Michael; Klebanoff, Leonard Elliott; Rea, Gerald W; Drake, Robert A; Johnson, Terry A; Wingert, Steven John; Damberger, Thomas A; Skradski, Thomas J; Radley, Christopher James; Oros, James M; Schuttinger, Paul G; Grupp, David J; Prey, Stephen Carl

2013-05-14T23:59:59.000Z

245

Growth and optical characterization of multilayers of InGaN quantum dots  

E-Print Network (OSTI)

(QDs) have recently attracted much attention for a variety of optoelectronic applications and for exploration of their fundamental physics [1] . By using a high density of uniformly distributed self-assembled QDs, laser diodes (LDs) have been r... [ 11] and microdisks [ 12] , which allows more efficient light extraction from the QD layer. In this paper, we investigated the growth of multilayers of InGaN QDs using the modified droplet epitaxy approach. It is hoped that this could lead...

Zhu, Tontong; El-Ella, Haitham; Reid, Benjamin; Holmes, Mark; Taylor, Robert; Kappers, Menno; Oliver, Rachel

2012-01-01T23:59:59.000Z

246

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

247

Geometry-dependent lighting  

E-Print Network (OSTI)

Abstract In this paper we introduce geometrydependent lighting that allows lighting parameters to be defined independently and possibly discrepantly over an object or scene based on the local geometry. We present and discuss Light Collages, a lighting design system with geometry-dependent lights for effective feature-enhanced visualization. Our algorithm segments the objects into local surface patches and places lights that are locally consistent but globally discrepant to enhance the perception of shape. We use spherical harmonics for efficiently storing and computing light placement and assignment. We also outline a method to find the minimal number of light sources sufficient to illuminate an object well with our globally discrepant lighting approach. Index Terms Lighting design, scientific illustration, discrepant lighting, light placement, silhouette enhancement, proximity shadows, spherical harmonics I.

Chang Ha Lee; Xuejun Hao; Amitabh Varshney

2005-01-01T23:59:59.000Z

248

Lighting Group: What's New  

NLE Websites -- All DOE Office Websites (Extended Search)

What's New What's New in the Lighting Group For more information on what's new in the Lighting Group, please contact: Francis Rubinstein Lighting Group Leader (510) 486-4096...

249

Light in the city  

E-Print Network (OSTI)

This thesis focuses on enhancing the awareness of light for the pedestrian,and using light as a way of revealing the structure of the city and its relation to the cosmos. It proposes that aesthetic qualities of light inform ...

Srinivasan, Kavita, 1976-

2002-01-01T23:59:59.000Z

250

Specific light in sculpture  

E-Print Network (OSTI)

Specific light is defined as light from artificial or altered natural sources. The use and manipulation of light in three dimensional sculptural work is discussed in an historic and contemporary context. The author's work ...

Powell, John William

1989-01-01T23:59:59.000Z

251

Energy_Savings_Light_Emitting_Diodes_Niche_Lighting_Apps.pdf...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EnergySavingsLightEmittingDiodesNicheLightingApps.pdf EnergySavingsLightEmittingDiodesNicheLightingApps.pdf EnergySavingsLightEmittingDiodesNicheLightingApps.p...

252

Light sources based on semiconductor current filaments  

DOE Patents (OSTI)

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Buttram, Malcolm T. (Sandia Park, NM); Mar, Alan (Albuquerque, NM); Helgeson, Wesley D. (Albuquerque, NM); O' Malley, Martin W. (Edgewood, NM); Hjalmarson, Harold P. (Albuquerque, NM); Baca, Albert G. (Albuquerque, NM); Chow, Weng W. (Cedar Crest, NM); Vawter, G. Allen (Albuquerque, NM)

2003-01-01T23:59:59.000Z

253

Prospects for LED lighting.  

SciTech Connect

Solid-state lighting using light-emitting diodes (LEDs) has the potential to reduce energy consumption for lighting by 50% while revolutionizing the way we illuminate our homes, work places, and public spaces. Nevertheless, substantial technical challenges remain in order for solid-state lighting to significantly displace the well-developed conventional lighting technologies. We review the potential of LED solid-state lighting to meet the long-term cost goals.

Tsao, Jeffrey Yeenien; Gee, James Martin; Simmons, Jerry Alvon

2003-08-01T23:59:59.000Z

254

Lighting Control Systems  

Science Conference Proceedings (OSTI)

The demand for lighting control systems in residential, commercial, and industrial facilities is on the rise with the demand for increased energy savings. With lighting accounting for almost 23% of grid load, there is significant opportunity to reduce lighting load while improving the quality of light for customers. Lighting control systems are becoming more intelligent as the need for them to interface with building control systems and demand response systems also increases. Lighting control systems use...

2009-12-17T23:59:59.000Z

255

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

256

Composite Lighting Simulations with Lighting Networks  

E-Print Network (OSTI)

A whole variety of different techniques for simulating global illumination in virtual environments have been developed over recent years. Each technique, including Radiosity, Monte-Carlo ray- or photon tracing, and directional-dependent Radiance computations, is best suited for simulating only some special case environments. None of these techniques is currently able to efficiently simulate all important lighting effects in non-trivial scenes. In this paper, we describe a new approach for efficiently combining different global illumination algorithms to yield a composite lighting simulation: Lighting Networks. Lighting Networks can exploit the advantages of each algorithm and can combine them in such a way as to simulate lighting effects that could only be computed at great costs by any single algorithm. Furthermore, this approach allows a user to configure the Lighting Network to compute only specific lighting effects that are important for a given task, while avoiding a costly simulation of the full global illumination in a scene. We show how the light paths computed by a Lighting Network can be described using regular expressions. This mapping allows us to analyze the composite lighting simulation and ensure completeness and redundant-free computations. Several examples demonstrate the advantages and unique lighting effects that can be obtained using this technique. 1

Philipp Slusallek; Marc Stamminger; Wolfgang Heidrich; Jan-Christian Popp; Hans-peter Seidel

1998-01-01T23:59:59.000Z

257

Lighting Group: Links  

NLE Websites -- All DOE Office Websites (Extended Search)

Links Links Links Organizations Illuminating Engineering Society of North America (IESNA) International Commission on Illumination (CIE) International Association of Lighting Designers (IALD) International Association of Energy-Efficient Lighting Lightfair International Energy Agency - Task 21: Daylight in Buildings: Design Tools and Performance Analysis International Energy Agency - Task 31: Daylighting Buildings in 21st Century National Association on Qualifications for the Lighting Professions (NCQLP) National Association of Independent Lighting Distributors (NAILD) International Association of Lighting Management Companies (NALMCO) Research Centers California Lighting Technology Center Lighting Research Center Lighting Research at Canada Institute for Research in Construction

258

Advanced Demand Responsive Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

Demand Demand Responsive Lighting Host: Francis Rubinstein Demand Response Research Center Technical Advisory Group Meeting August 31, 2007 10:30 AM - Noon Meeting Agenda * Introductions (10 minutes) * Main Presentation (~ 1 hour) * Questions, comments from panel (15 minutes) Project History * Lighting Scoping Study (completed January 2007) - Identified potential for energy and demand savings using demand responsive lighting systems - Importance of dimming - New wireless controls technologies * Advanced Demand Responsive Lighting (commenced March 2007) Objectives * Provide up-to-date information on the reliability, predictability of dimmable lighting as a demand resource under realistic operating load conditions * Identify potential negative impacts of DR lighting on lighting quality Potential of Demand Responsive Lighting Control

259

Light Laboratory, Inc.  

Science Conference Proceedings (OSTI)

... 12) Solid State Lighting Luminaires - Color Characteristic Measurements. [22/S04] IES LM-16:1993 Practical Guide to Colorimetry of Light Sources. ...

2013-07-26T23:59:59.000Z

260

Hubbell Lighting Photometric Laboratory  

Science Conference Proceedings (OSTI)

... 12) Solid State Lighting Luminaires - Color Characteristic Measurements. [22/S04] IES LM-16:1993 Practical Guide to Colorimetry of Light Sources. ...

2013-07-26T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Light Metals 2010  

Science Conference Proceedings (OSTI)

Feb 1, 2010 ... Softcover book: Light Metals 2008 Volume 2: Aluminum Reduction. Hardcover book and CD-ROM: Light Metals 2009...

262

Plant and Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

publicationshouseplantligh t.html Sincerely, Anthony R. Brach "Artificial" light comes from many kinds of bulbs that emit different wavelengths of light; Many plants...

263

National Synchrotron Light Source  

NLE Websites -- All DOE Office Websites (Extended Search)

Angle Limit," Phys. Rev. Lett., 99: 134801 (2007). 33 Researchers Produce Firsts with Bursts of Light BNL researchers have generated extremely short pulses of light that are the...

264

Lighting and Daylighting Basics  

Energy.gov (U.S. Department of Energy (DOE))

Buildings can be lit in two ways: by using artificial lighting, or by using daylighting, or the process of using natural sunlight, windows, and skylights to provide lighting.

265

Lighting | Open Energy Information  

Open Energy Info (EERE)

Community Login | Sign Up Search Page Edit History Facebook icon Twitter icon Lighting Jump to: navigation, search TODO: Add description List of Lighting Incentives...

266

Lighting Systems Test Facilities  

NLE Websites -- All DOE Office Websites (Extended Search)

Measurement equipment with light beam Lighting Systems Test Facilities NOTICE Due to the current lapse of federal funding, Berkeley Lab websites are accessible, but may not be...

267

Lighting and Daylighting  

Energy.gov (U.S. Department of Energy (DOE))

Buildings can be lit in two ways: by using artificial lighting, or by using daylighting, or the process of using natural sunlight, windows, and skylights to provide lighting.

268

Looking For Light.  

E-Print Network (OSTI)

??In my search for the way light can dictate the overall expression of an image, I have found that light is the means that activates (more)

Lindholm, Kevin R.

2010-01-01T23:59:59.000Z

269

LBNL Lighting Research Group  

NLE Websites -- All DOE Office Websites (Extended Search)

LED and ballast berkeley lamp workstation light switch Overview | What's New | Publications | Software | Facilities | People | Contact Us | Links Sources and Ballasts | Light...

270

Properties of Light  

Science Conference Proceedings (OSTI)

... Scattering of Light. Exploration: Sunset in a glass. ... How would you design a camera that could see through a sand storm? Invisible Light. ...

2012-03-23T23:59:59.000Z

271

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence  

E-Print Network (OSTI)

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence October 1997; accepted for publication 5 January 1998 Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed

Bowers, John

272

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs?AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

273

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

274

Cree LED Lighting Solutions Formerly LED Lighting Fixtures LLF...  

Open Energy Info (EERE)

Cree LED Lighting Solutions Formerly LED Lighting Fixtures LLF Jump to: navigation, search Name Cree LED Lighting Solutions (Formerly LED Lighting Fixtures (LLF)) Place...

275

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

276

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

277

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

278

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and ...

279

Incandescent Lighting | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Incandescent Lighting Incandescent Lighting August 16, 2013 - 10:00am Addthis Incandescent lighting is the most common type of lighting used in homes. Incandescent lamps operate...

280

Solid-State Lighting: Registration  

NLE Websites -- All DOE Office Websites (Extended Search)

Lighting: Registration on Twitter Bookmark Solid-State Lighting: Registration on Google Bookmark Solid-State Lighting: Registration on Delicious Rank Solid-State Lighting:...

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Solid-State Lighting: Postings  

NLE Websites -- All DOE Office Websites (Extended Search)

Solid-State Lighting: Postings on Twitter Bookmark Solid-State Lighting: Postings on Google Bookmark Solid-State Lighting: Postings on Delicious Rank Solid-State Lighting:...

282

Lighting Research Group  

NLE Websites -- All DOE Office Websites (Extended Search)

Lighting Research Group overview what's new publications software facilities people contact us links...

283

Plasma Damage in p-GaN  

SciTech Connect

The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J.; Van Hove, J.M.; Zhang, A.P.; Zhang, L.

1999-06-30T23:59:59.000Z

284

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

285

Energy and lighting decisions  

SciTech Connect

This report reviews the fundamental principles of lighting and uses them to evaluate energy-conserving lighting equipment and techniques. The selection of the proper lighting components and systems is complex, requiring a knowledge of the characteristics of light sources and their interactions with the auxiliary equipment and the environment. Furthermore, there are subjective aspects of lighting that are difficult to quantify. We address the simplistic way in which lighting is commonly approached, then present an argument as to the critical nature of the lighting decision. In the final sections we discuss and evaluate lighting equipment in terms of its applications and characteristics. Familiarity with the fundamental characteristics of the elements of lighting equipment will also permit more judicious appraisal and use of lighting concepts that may be introduced in the future. 6 figs., 9 tabs.

Verderber, R.R.

1986-06-01T23:59:59.000Z

286

Lighting Inventory Lighting Theatre and Drama  

E-Print Network (OSTI)

Strand Basic Palette 400 channel 800 attrib. 1 Strand Lighting 200 Series 24/48 1 1 MicroVision 2 HORIZON

Indiana University

287

Lighting Retrofit Study  

SciTech Connect

The Lighting Retrofit Study was an effort to determine the most cost-effective methods of retrofitting several configurations of lighting systems at Lawrence Berkeley Laboratory (LBL) and Lawrence Livermore National Laboratory (LLNL). We developed a test protocol to compare a variety of lighting technologies for their applicability in labs and offices and designed and constructed a novel lighting contrast potential meter to allow for comparison of lighting quality as well as quantity.

Kromer, S.; Morse, O.; Siminovitch, M.

1991-09-01T23:59:59.000Z

288

Growth and Electronic Properties of GaN/ZnO Solid Solution Nanowires  

Science Conference Proceedings (OSTI)

We have grown single-crystal (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid-solution nanowires using nanostructured ZnGa{sub 2}O{sub 4} precursor prepared by a sol-gel method. From electrical transport measurements in individual nanowire field-effect transistors, we have identified the conduction as n-type and obtained a background carrier density (-10{sup 19} cm{sup -3}) and an electron mobility (-1 cm{sup 2}/V s) that are consistent with chemical disorder and a large number of charge traps, as confirmed by the devices photocurrent response. From the dependence of the device photoresponse on incident light wavelength, we have determined the energy band gap of (Ga{sub 0.88}Zn{sub 0.12})(N{sub 0.88}O{sub 0.12}) to be as much as -0.6 eV lower than that of GaN or ZnO.

Han, W.Q.; Zhang, Y.; Nam, C.-Y.; Black, C.T.; Mendez, E.E.

2010-08-23T23:59:59.000Z

289

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

290

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

291

Nanocrystals cylindrical microcavities exploiting thin-walled InGaAs/GaAs microtubes  

Science Conference Proceedings (OSTI)

This paper relies on the design and fabrication of CdSe/ZnS core/shell colloidal nanocrystals (NCs) cylindrical microcavities for microphotonics applications. The fabrication technology relies on the release of the strain in strained heterostructures, ... Keywords: Colloidal nanocrystals, InGaAs/GaAs microtubes, Strained multilayer

C. Giordano; M. T. Todaro; A. Salhi; L. Martiradonna; I. Viola; A. Passab; L. Carbone; G. Gigli; A. Passaseo; M. De Vittorio

2007-05-01T23:59:59.000Z

292

EK101 Engineering Light Smart Lighting  

E-Print Network (OSTI)

represents high usage of an engine and the violet end represents low usage. A light blue coloring represents from red to light blue), and slowly increase their usage of engine A. The seventh row show a patternModeling Long-Term Search Engine Usage Ryen W. White, Ashish Kapoor, and Susan T. Dumais Microsoft

Bifano, Thomas

293

Spectrally Enhanced Lighting  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

November 2007 November 2007 AfterImage + s p a c e 1 Spectrally Enhanced Lighting Spectrally Enhanced Lighting Brian Liebel, PE, LC Brian Liebel, PE, LC November 29, 2007 November 29, 2007 Federal Utilities Partnership Working Group Federal Utilities Partnership Working Group November 29, 2007 November 29, 2007 29 November 2007 AfterImage + s p a c e 2 Spectrally Enhanced Lighting Spectrally Enhanced Lighting Spectrally Enhanced Lighting Spectrally Enhanced Lighting This is not a technology; just a This is not a technology; just a different way to quantify light based on different way to quantify light based on well established scientific findings well established scientific findings Can be used in conjunction with ANY Can be used in conjunction with ANY type of lighting design to gain

294

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

295

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

296

Ab initio study on noncompensated CrO codoping of GaN for enhanced solar energy conversion  

SciTech Connect

We describe a novel photocatalyst obtained by codoping GaN with CrO, according to a new "noncompensated" codoping concept based on first-principles calculations. The approach enables controllable narrowing of the GaN band gap with significantly enhanced carrier mobility and photocatalytic activity in the visible light region and thus offers immense potential for application in solar energy conversion, water splitting, and a variety of solar-assisted photocatalysis. Our calculations indicate that the formation energy for the cation doping is greatly reduced by noncompensated codoping with an anion. Although Cr doping alone can split the band gap with the formation of an intermediate band, the mobility is low due to carrier trapping by the localized states. The first-principles calculations also demonstrate that CrO codoping of GaN shifts the Fermi level into the conduction band resulting in high carrier density and mobility.

Pan, Hui [ORNL; Gu, Baohua [ORNL; Eres, Gyula [ORNL; Zhang, Zhenyu [ORNL

2010-03-01T23:59:59.000Z

297

Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflector  

SciTech Connect

Effects of antimony crystallization on the surface of GaSb during low temperature molecular beam epitaxy growth are investigated. The geometry of these structures is studied via transmission electron and atomic force microscopies, which show the surface metal forms triangular-shaped, elongated nano-wires with a structured orientation composed entirely of crystalline antimony. By depositing antimony on a GaSb/AlAsSb distributed Bragg reflector, the field is localized within the antimony layer. Polarization dependent transmission measurements are carried out on these nano-structures deposited on a GaSb/AlAsSb distributed Bragg reflector. It is shown that the antimony-based structures at the surface favor transmission of light polarized perpendicular to the wires.

Husaini, S.; Shima, D.; Ahirwar, P.; Rotter, T. J.; Hains, C. P.; Dang, T.; Bedford, R. G.; Balakrishnan, G. [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433 (United States)] [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433 (United States)

2013-02-11T23:59:59.000Z

298

LED Lighting | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

LED Lighting LED Lighting August 16, 2013 - 10:07am Addthis Light-emitting diodes (LEDs) are light sources that differ from more traditional sources of light in that they are...

299

Natural lighting and skylights  

E-Print Network (OSTI)

There are many physiological and psychological factors which enter into the proper design of space for human occupancy. One of these elements is light. Both natural light and manufactured light are basic tools with which any designer must work. However, they are only two of the many, many elements which must be considered; and they, therefore, must be considered, always, in relation to the other elements. The achievement of good lighting depends on a reasonable understanding of three primary factors: one, the visual response to lighting; two, the availability and types of lighting; and three, methods for controlling light. This thesis is intended to supply enough information to provide a working knowledge of each of these facets. The human visual response is discussed in "Goals For Good Lighting." The availability and types of lighting are dealt with in the section on available light. The remainder of the thesis concerns methods for controlling light. The use of scale models for studying the natural lighting characteristics of buildings due to the building geometry, the fenestration details and the interior reflectance has been well established as pointed out in the earlier part of this thesis. With the completion of the work outlined herein, the feasibility of using scale models for studying skylights is also an established fact. The method of analysis by models can be a valuable tool to any designer who is concerned about day-lighting.

Evans, Benjamin Hampton

1961-01-01T23:59:59.000Z

300

GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LED's  

SciTech Connect

The objective of this project was to develop and then demonstrate the efficacy of a costeffective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this GaN-ready substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded AlxGa1-xN layers on top. Pseudomorphic AlxGa1-xN epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 108 cm-2 while the pseudomorphic LEDs have TDD ? 105 cm-2. The resulting TDD, when grading the AlxGa1-xN layer all the way to pure GaN to produce a GaN-ready substrate, has varied between the mid 108 down to the 106 cm-2. These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

Sandra Schujman; Leo Schowalter

2010-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

302

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

303

Lighting Group: Overview  

NLE Websites -- All DOE Office Websites (Extended Search)

Overview Overview Overview of the Lighting Research Group The Lighting Research Group at Lawrence Berkeley National Laboratory performs research aimed at improving the energy efficiency of lighting systems in buildings and homes, throughout the State of California and across the Nation. The goal is to reduce lighting energy consumption by 50% over twenty years by improving the efficiency of light sources, and controlling and delivering illumination so that it is available, where and when needed, and at the required intensity. Research in the Lighting Group falls into three main areas: Sources and Ballasts, Light Distribution Systems and Controls and Communications. Click on a link below for more information about each of these research areas. Sources and Ballasts investigates next generation light sources, such as

304

Madrid Electric Lighting Report  

NLE Websites -- All DOE Office Websites (Extended Search)

Electric Lighting Quality Page 1 of 2 ELECTRIC LIGHTING QUALITY MAGIC BOX is a versatile home. Its design allows to change the room size by opening and closing the movable walls...

305

Automatic lighting controls demonstration  

SciTech Connect

The purpose of this work was to demonstrate, in a real building situation, the energy and peak demand reduction capabilities of an electronically ballasted lighting control system that can utilize all types of control strategies to efficiently manage lighting. The project has demonstrated that a state-of-the-art electronically ballasted dimmable lighting system can reduce energy and lighting demand by as least 50% using various combinations of control strategies. By reducing light levels over circulation areas (tuning) and reducing after hours light levels to accommodate the less stringent lighting demands of the cleaning crew (scheduling), lighting energy consumption on weekdays was reduced an average of 54% relative to the initial condition. 10 refs., 14 figs., 3 tabs.

Rubinstein, F.; Verderber, R.

1990-03-01T23:59:59.000Z

306

Lighting energy audit workbook  

SciTech Connect

A simple test to determine the need for a lighting energy audit is followed by how-to information on conducting the audit, identifying savings opportunities, and developing an energy management plan for lighting.

1984-01-01T23:59:59.000Z

307

Inverse Lighting for Photography  

E-Print Network (OSTI)

We introduce a technique for improving photographs using inverse lighting, a new process based on algorithms developed in computer graphics for computing the reflection of light in 3D space. From a photograph and a 3D surface model for the object pictured, inverse lighting estimates the directional distribution of the incident light. We then use this information to process the photograph digitally to alter the lighting on the object. Inverse lighting is a specific example of the general idea of inverse rendering. This refers to the practice of using the methods of computer graphics, which normally are used to render images from scene information, to infer scene information from images. Our system uses physically based rendering technology to construct a linear least squares system that we solve to find the lighting. As an application, the results are then used to simulate a change in the incident light in the photograph. An implementation is described that uses 3D models from a laser...

Stephen R. Marschner; Donald P. Greenberg

1997-01-01T23:59:59.000Z

308

Fast Light, Fast Neutrinos?  

E-Print Network (OSTI)

Light has been observed with group velocities both faster and slower than the speed of light. The recent report from OPERA of superluminal 17 GeV neutrinos may describe a similar phenomenon.

Cahill, Kevin

2011-01-01T23:59:59.000Z

309

Light Wavelength and Plants  

NLE Websites -- All DOE Office Websites (Extended Search)

Light Wavelength and Plants Name: John Location: NA Country: NA Date: NA Question: I just was wandering whether plants grow better in artificial light or in sunlight. I am...

310

Germinating and Light  

NLE Websites -- All DOE Office Websites (Extended Search)

Germinating and Light Name: Chris Location: NA Country: NA Date: NA Question: Can you tell me how plants determine where the light is once they are out of the soil and not a...

311

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network (OSTI)

and have been used extensively in light emitting diodes LEDs and laser diodes at wavelengths through

Heaton, Thomas H.

312

PFP Emergency Lighting Study  

SciTech Connect

NFPA 101, section 5-9 mandates that, where required by building classification, all designated emergency egress routes be provided with adequate emergency lighting in the event of a normal lighting outage. Emergency lighting is to be arranged so that egress routes are illuminated to an average of 1.0 footcandle with a minimum at any point of 0.1 footcandle, as measured at floor level. These levels are permitted to drop to 60% of their original value over the required 90 minute emergency lighting duration after a power outage. The Plutonium Finishing Plant (PFP) has two designations for battery powered egress lights ''Emergency Lights'' are those battery powered lights required by NFPA 101 to provide lighting along officially designated egress routes in those buildings meeting the correct occupancy requirements. Emergency Lights are maintained on a monthly basis by procedure ZSR-12N-001. ''Backup Lights'' are battery powered lights not required by NFPA, but installed in areas where additional light may be needed. The Backup Light locations were identified by PFP Safety and Engineering based on several factors. (1) General occupancy and type of work in the area. Areas occupied briefly during a shiftly surveillance do not require backup lighting while a room occupied fairly frequently or for significant lengths of time will need one or two Backup lights to provide general illumination of the egress points. (2) Complexity of the egress routes. Office spaces with a standard hallway/room configuration will not require Backup Lights while a large room with several subdivisions or irregularly placed rooms, doors, and equipment will require Backup Lights to make egress safer. (3) Reasonable balance between the safety benefits of additional lighting and the man-hours/exposure required for periodic light maintenance. In some plant areas such as building 236-Z, the additional maintenance time and risk of contamination do not warrant having Backup Lights installed in all rooms. Sufficient light for egress is provided by existing lights located in the hallways.

BUSCH, M.S.

2000-02-02T23:59:59.000Z

313

TMS Light Metals Publication  

Science Conference Proceedings (OSTI)

The following instructions should be used when submitting a manuscript for any TMS Light Metals proceedings volume. INTRODUCTION. Orientation to...

314

Solid-State Lighting: Solid-State Lighting  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solid-State Lighting Search Solid-State Lighting Search Search Help Solid-State Lighting HOME ABOUT THE PROGRAM R&D PROJECTS MARKET-BASED PROGRAMS SSL BASICS INFORMATION RESOURCES FINANCIAL OPPORTUNITIES EERE » Building Technologies Office » Solid-State Lighting Printable Version Share this resource Send a link to Solid-State Lighting: Solid-State Lighting to someone by E-mail Share Solid-State Lighting: Solid-State Lighting on Facebook Tweet about Solid-State Lighting: Solid-State Lighting on Twitter Bookmark Solid-State Lighting: Solid-State Lighting on Google Bookmark Solid-State Lighting: Solid-State Lighting on Delicious Rank Solid-State Lighting: Solid-State Lighting on Digg Find More places to share Solid-State Lighting: Solid-State Lighting on AddThis.com... Pause/Resume Photo of a large room with people standing around poster boards.

315

DOE Kicks Off National "Change a Light, Change the World" Campaign |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Kicks Off National "Change a Light, Change the World" Campaign Kicks Off National "Change a Light, Change the World" Campaign DOE Kicks Off National "Change a Light, Change the World" Campaign October 3, 2006 - 9:08am Addthis ATLANTA, GA - U.S. Department of Energy (DOE) Assistant Secretary for Policy and International Affairs Karen A. Harbert today joined Georgia Power President and CEO Mike Garrett to kick off the seventh annual ENERGY STAR ® National "Change a Light, Change the World" campaign at Georgia Power headquarters. The "Change a Light" campaign is a national call-to-action by the U.S. Environmental Protection Agency (EPA) and DOE encouraging all Americans to help change the world, one light - one energy-saving step - at a time. The "Change a Light" campaign runs from

316

Improved InGaN epitaxy yield by precise temperature measurement :yearly report 1.  

SciTech Connect

This Report summarizes the first year progress (October 1, 2004 to September 30, 2005) made under a NETL funded project entitled ''Improved InGaN Epitaxy Yield by Precise Temperature Measurement''. This Project addresses the production of efficient green LEDs, which are currently the least efficient of the primary colors. The Project Goals are to advance IR and UV-violet pyrometry to include real time corrections for surface emissivity on multiwafer MOCVD reactors. Increasing wafer yield would dramatically reduce high brightness LED costs and accelerate the commercial manufacture of inexpensive white light LEDs with very high color quality. This work draws upon and extends our previous research (funded by DOE) that developed emissivity correcting pyrometers (ECP) based on the high-temperature GaN opacity near 400 nm (the ultraviolet-violet range, or UVV), and the sapphire opacity in the mid-IR (MIR) near 7.5 microns.

Koleske, Daniel David; Creighton, James Randall; Russell, Michael J.; Fischer, Arthur Joseph

2006-08-01T23:59:59.000Z

317

Thermoelectric properties of AgGaTe$_2$ and related chalcopyrite structure materials  

Science Conference Proceedings (OSTI)

We present an analysis of the potential thermoelectric performance of p-type AgGaTe$_{2}$, which has already shown a $ZT$ of 0.8 with partial optimization, and observe that the same band structure features, such as a mixture of light and heavy bands and isotropic transport, that lead to this good performance are present in certain other ternary chalcopyrite structure semiconductors. We find that optimal performance of AgGaTe$_2$ will be found for hole concentrations between 4 $\\times 10^{19}$ and 2 $\\times 10^{20}$cm$^{-3}$ at 900 K, and 2 $\\times 10^{19}$ and 10$^{20}$ cm$^{-3}$ at 700 K, and that certain other chalcopyrite semiconductors might show good thermoelectric performance at similar doping ranges and temperatures if not for higher lattice thermal conductivity.

Parker, David S [ORNL; Singh, David J [ORNL

2012-01-01T23:59:59.000Z

318

Lighting management casebook  

SciTech Connect

Fifteen examples illustrate how lighting system projects can save energy as well as improve productivity and safety. The case histories include the use of programmable lighting, fiber optics, skylights, voltage reduction, ultrasonic and infrared sensors, and other strategies for improving lighting efficiency. Each case history includes the management approach, site information, and applications. (DCK)

1982-06-01T23:59:59.000Z

319

Advanced Lighting Guidelines  

Science Conference Proceedings (OSTI)

Information about energy-effective lighting technologies is required to be updated as old technologies become obsolete and new technologies begin to make important market impacts. Providing a comprehensive, state-of-the-art update of lighting technology application and information is necessary to ensure that lighting decision-makers have the best possible information available at all times.

2001-10-22T23:59:59.000Z

320

Energy and lighting design  

SciTech Connect

Energy conserving practices in providing lighting for today's buildings are examined in this second of a two-part presentation. Discussion on light source characteristics, ballast characteristics for gaseous discharge lamps, quality and the cost of lighting, and equivalent sphere illumination are included.

Helms, R.N.

1979-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Radiation effects in 1. 06-. mu. m InGaAs LED's and Si photodiodes  

SciTech Connect

Because of the low-intrinsic and radiation-induced attenuation losses in glass fibers in the wavelength range 1.0--1.3 ..mu..m, emitters and detectors operating in this range are of practical importance for radiation-environment applications. We have studied the effects of both ..gamma.. and neutron irradiation on the properties of InGaAs LED's emitting at 1.06 ..mu..m and Si photodiode detectors optimized for this wavelength. While the preirradiation light output of the InGaAs LED's is low relative to many GaAs LED's, the InGaAs devices exhibit less sensitivity to radiation than the most radiation-hardened GaAs LED's. No significant neutron-induced light-output degradation is observed below 1 x 10/sup 13/ n/cm/sup 2/, while 2 x 10/sup 7/ Co-60 rads are required before any ..gamma..-induced degradation is observed. In addition, a significant portion of the ..gamma..-induced light-output degradation can be recovered by applying forward-bias currents of the order of 50 mA in magnitude. Although ..gamma.. irradiation up to 2 x 10/sup 8/ rads has essentially no effect on the photodiodes, neutron fluences above 2 x 10/sup 14/ n/cm/sup 2/ cause a reduction in responsivity. Analysis of the neutron-induced increases in the photodiode leakage current with the guard ring attached reveals a lifetime-damage constant product of 4 x 10/sup -12/ cm/sup 2//n. Laboratory isolators made up of these emitters and detectors have typical preirradiation current-transfer ratios of 5 x 10/sup -4/ which decrease by a factor of 10 after an irradiation of 1.5 x 10/sup 14/ n/cm/sup 2/.

Barnes, C.E.

1979-08-01T23:59:59.000Z

322

GaN Nanopore Arrays: Fabrication and Characterization  

E-Print Network (OSTI)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

Wang, Yadong

323

Final report on LDRD project : outstanding challenges for AlGaInN MOCVD.  

Science Conference Proceedings (OSTI)

The AlGaInN material system is used for virtually all advanced solid state lighting and short wavelength optoelectronic devices. Although metal-organic chemical vapor deposition (MOCVD) has proven to be the workhorse deposition technique, several outstanding scientific and technical challenges remain, which hinder progress and keep RD&A costs high. The three most significant MOCVD challenges are: (1) Accurate temperature measurement; (2) Reliable and reproducible p-doping (Mg); and (3) Low dislocation density GaN material. To address challenge (1) we designed and tested (on reactor mockup) a multiwafer, dual wavelength, emissivity-correcting pyrometer (ECP) for AlGaInN MOCVD. This system simultaneously measures the reflectance (at 405 and 550 nm) and emissivity-corrected temperature for each individual wafer, with the platen signal entirely rejected. To address challenge (2) we measured the MgCp{sub 2} + NH{sub 3} adduct condensation phase diagram from 65-115 C, at typical MOCVD concentrations. Results indicate that it requires temperatures of 80-100 C in order to prevent MgCp{sub 2} + NH{sub 3} adduct condensation. Modification and testing of our research reactor will not be complete until FY2005. A new commercial Veeco reactor was installed in early FY2004, and after qualification growth experiments were conducted to improve the GaN quality using a delayed recovery technique, which addresses challenge (3). Using a delayed recovery technique, the dislocation densities determined from x-ray diffraction were reduced from 2 x 10{sup 9} cm{sup -2} to 4 x 10{sup 8} cm{sup -2}. We have also developed a model to simulate reflectance waveforms for GaN growth on sapphire.

Mitchell, Christine Charlotte; Follstaedt, David Martin; Russell, Michael J.; Cross, Karen Charlene; Wang, George T.; Creighton, James Randall; Allerman, Andrew Alan; Koleske, Daniel David; Lee, Stephen Roger; Coltrin, Michael Elliott

2005-03-01T23:59:59.000Z

324

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

325

Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape ...  

Science Conference Proceedings (OSTI)

... Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape Memory Alloys. Peng Zhao (Dept. of Materials Science and ...

326

Resonant energy transfer in light harvesting and light emitting applications.  

E-Print Network (OSTI)

??The performance of light emitting and light harvesting devices is improved by utilising resonant energy transfer. In lighting applications, the emission energy of a semiconductor (more)

Chanyawadee, Soontorn

2009-01-01T23:59:59.000Z

327

LIGHT FORCE: An Exploration of Light through Design.  

E-Print Network (OSTI)

??What falls into the realm of light and what it means to design and the human experience? Can light be material? How does light change (more)

Chen, Tzu

2007-01-01T23:59:59.000Z

328

Solid-State Lighting: Webcast: Evaluating LED Street Lighting...  

NLE Websites -- All DOE Office Websites (Extended Search)

Webcast: Evaluating LED Street Lighting Solutions to someone by E-mail Share Solid-State Lighting: Webcast: Evaluating LED Street Lighting Solutions on Facebook Tweet about...

329

Lighting Group: Sources and Ballasts: LED Task Light  

NLE Websites -- All DOE Office Websites (Extended Search)

light The goal of this project is to accelerate the use of energy efficient light emitting diode (LED) technology for general lighting applications by developing a task lamp...

330

High-Efficiency Non-Polar GaN-Based LEDs  

SciTech Connect

Inlustra Technologies with subcontractor U.C. Santa Barbara conducted a project with the principle goal of demonstrating high internal quantum efficiency blue (430 nm) and green (540nm) light emitting diodes (LEDs) on low-defect density non-polar GaN wafers. Inlustra pursued the fabrication of smooth thick a-plane and m-plane GaN films, as well as defect reduction techniques such as lateral epitaxial overgrowth (LEO) to uniformly lower dislocation density in these films. Limited free-standing wafers were produced as well. By the end of the reporting period, Inlustra had met its milestone of dislocation reduction to < 5 x 10{sup 6} cm{sup -2}. Stacking faults were still present in appreciable density ({approx} 1 x 10{sup 5} cm{sup -1}), but were not the primary focus of defect reduction since there have been no published studies establishing their detrimental effects on LED performance. Inlustra's LEO progress built a solid foundation upon which further commercial development of GaN substrates will occur. UCSB encountered multiple delays in its LED growth and fabrication efforts due to unavoidable facilities outages imposed by ongoing construction in an area adjacent to the metalorganic chemical vapor deposition (MOCVD) laboratory. This, combined with the large amount of ab initio optimization required for the MOCVD system used during the project, resulted in unsatisfactory LED progress. Although numerous blue-green photoluminescence results were obtained, only a few LED structures exhibited electroluminescence at appreciable levels. UCSB also conducting extensive modeling (led by Prof. Van de Walle) on the problem of non-radiative Auger recombination in GaN-based LED structures, which has been posited to contribute to LED efficiency 'droop' at elevated current density. Unlike previous modeling efforts, UCSB's approach was truly a first-principles ab initio methodology. Building on solid numerical foundations, the Auger recombination rates of In{sub x}Ga{sub 1-x}N alloys were calculated from first-principles density-functional and many-body-perturbation theory. The differing mechanisms of inter- and intra-band recombination were found to affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient was calculated to be as large as 2 x 10{sup -30} cm{sup 6} s{sup -1}; in the infrared it is even larger. These results indicated that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters, whether on non-polar or polar crystal planes.

Paul Fini

2010-11-30T23:59:59.000Z

331

High-Efficiency Non-Polar GaN-Based LEDs  

Science Conference Proceedings (OSTI)

Inlustra Technologies with subcontractor U.C. Santa Barbara conducted a project with the principle goal of demonstrating high internal quantum efficiency blue (430 nm) and green (540nm) light emitting diodes (LEDs) on low-defect density non-polar GaN wafers. Inlustra pursued the fabrication of smooth thick a-plane and m-plane GaN films, as well as defect reduction techniques such as lateral epitaxial overgrowth (LEO) to uniformly lower dislocation density in these films. Limited free-standing wafers were produced as well. By the end of the reporting period, Inlustra had met its milestone of dislocation reduction to LED performance. Inlustra's LEO progress built a solid foundation upon which further commercial development of GaN substrates will occur. UCSB encountered multiple delays in its LED growth and fabrication efforts due to unavoidable facilities outages imposed by ongoing construction in an area adjacent to the metalorganic chemical vapor deposition (MOCVD) laboratory. This, combined with the large amount of ab initio optimization required for the MOCVD system used during the project, resulted in unsatisfactory LED progress. Although numerous blue-green photoluminescence results were obtained, only a few LED structures exhibited electroluminescence at appreciable levels. UCSB also conducting extensive modeling (led by Prof. Van de Walle) on the problem of non-radiative Auger recombination in GaN-based LED structures, which has been posited to contribute to LED efficiency 'droop' at elevated current density. Unlike previous modeling efforts, UCSB's approach was truly a first-principles ab initio methodology. Building on solid numerical foundations, the Auger recombination rates of In{sub x}Ga{sub 1-x}N alloys were calculated from first-principles density-functional and many-body-perturbation theory. The differing mechanisms of inter- and intra-band recombination were found to affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient was calculated to be as large as 2 x 10{sup -30} cm{sup 6} s{sup -1}; in the infrared it is even larger. These results indicated that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters, whether on non-polar or polar crystal planes.

Paul Fini

2010-11-30T23:59:59.000Z

332

Solid-State Lighting: Solid-State Lighting Videos  

NLE Websites -- All DOE Office Websites (Extended Search)

Solid-State Lighting Videos to Solid-State Lighting Videos to someone by E-mail Share Solid-State Lighting: Solid-State Lighting Videos on Facebook Tweet about Solid-State Lighting: Solid-State Lighting Videos on Twitter Bookmark Solid-State Lighting: Solid-State Lighting Videos on Google Bookmark Solid-State Lighting: Solid-State Lighting Videos on Delicious Rank Solid-State Lighting: Solid-State Lighting Videos on Digg Find More places to share Solid-State Lighting: Solid-State Lighting Videos on AddThis.com... Conferences & Meetings Presentations Publications Webcasts Videos Tools Solid-State Lighting Videos On this page you can access DOE Solid-State Lighting (SSL) Program videos. Photo of a museum art gallery with LED lights in track fixtures overhead. The City of Los Angeles LED Streetlight Program

333

Solid-State Lighting: Solid-State Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

Lighting Lighting Printable Version Share this resource Send a link to Solid-State Lighting: Solid-State Lighting to someone by E-mail Share Solid-State Lighting: Solid-State Lighting on Facebook Tweet about Solid-State Lighting: Solid-State Lighting on Twitter Bookmark Solid-State Lighting: Solid-State Lighting on Google Bookmark Solid-State Lighting: Solid-State Lighting on Delicious Rank Solid-State Lighting: Solid-State Lighting on Digg Find More places to share Solid-State Lighting: Solid-State Lighting on AddThis.com... Pause/Resume Photo of a large room with people standing around poster boards. Register Now for DOE's 11th Annual SSL R&D Workshop January 28-30, join other SSL R&D professionals from industry, government, and academia to learn, share, and shape the future of lighting.

334

Solid-State Lighting: Solid-State Lighting Contacts  

NLE Websites -- All DOE Office Websites (Extended Search)

About the About the Program Printable Version Share this resource Send a link to Solid-State Lighting: Solid-State Lighting Contacts to someone by E-mail Share Solid-State Lighting: Solid-State Lighting Contacts on Facebook Tweet about Solid-State Lighting: Solid-State Lighting Contacts on Twitter Bookmark Solid-State Lighting: Solid-State Lighting Contacts on Google Bookmark Solid-State Lighting: Solid-State Lighting Contacts on Delicious Rank Solid-State Lighting: Solid-State Lighting Contacts on Digg Find More places to share Solid-State Lighting: Solid-State Lighting Contacts on AddThis.com... Contacts Partnerships Solid-State Lighting Contacts For information about Solid-State Lighting, contact James Brodrick Lighting Program Manager Building Technologies Office U.S. Department of Energy

335

Solid-State Lighting: Adaptive Street Lighting Controls  

NLE Websites -- All DOE Office Websites (Extended Search)

Adaptive Street Lighting Adaptive Street Lighting Controls to someone by E-mail Share Solid-State Lighting: Adaptive Street Lighting Controls on Facebook Tweet about Solid-State Lighting: Adaptive Street Lighting Controls on Twitter Bookmark Solid-State Lighting: Adaptive Street Lighting Controls on Google Bookmark Solid-State Lighting: Adaptive Street Lighting Controls on Delicious Rank Solid-State Lighting: Adaptive Street Lighting Controls on Digg Find More places to share Solid-State Lighting: Adaptive Street Lighting Controls on AddThis.com... Conferences & Meetings Presentations Publications Webcasts Videos Tools Adaptive Street Lighting Controls This two-part DOE Municipal Solid-State Street Lighting Consortium webinar focused on LED street lighting equipped with adaptive control components.

336

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

337

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

338

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

339

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

340

Emerging Lighting Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Emerging Lighting Technology Emerging Lighting Technology Bruce Kinzey Pacific Northwest National Laboratory FUPWG - Portland, OR April 20, 2011 www.ssl.energy.gov 2 | Solid-State Lighting Program GATEWAY Demonstration Program * Purpose: demonstrate new SSL products in real-world applications that save energy, match or improve illumination, and are cost- effective * Demos generate critical field experience providing: - Feedback to manufacturers - Data for utility incentives - Market readiness of specific applications to users - Advancement in lighting knowledge Central Park, NY Photo: Ryan Pyle Smithsonian American Art Museum, Washington, D.C. Photo: Scott Rosenfeld www.ssl.energy.gov 3 | Solid-State Lighting Program LED Product Explosion www.ssl.energy.gov 4 | Solid-State Lighting Program LEDs are Not a Universal Lighting

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Industrial lighting handbook  

SciTech Connect

Technological advances in industrial lighting system components now make it possible to reduce lighting system consumption by up to 50% or more without loss of the benefits inherent in good quality electric illumination. Management involvement in decisions about industrial lighting is essential, however, and this document provides generalized information in lay terms to help decision-makers become familiar with the concerns that affect industrial environment and the financial well-being of their companies. The five sections (1) discuss the benefits of good lighting, (2) review certain major lighting issues and terms, (3) identify procedures for developing a lighting energy management plan, (4) identify lighting energy management options (LEMOs), and (5) discuss sources of assistance. 19 figures, 8 tables.

1985-01-01T23:59:59.000Z

342

Photonic crystal light source  

DOE Patents (OSTI)

A light source is provided by a photonic crystal having an enhanced photonic density-of-states over a band of frequencies and wherein at least one of the dielectric materials of the photonic crystal has a complex dielectric constant, thereby producing enhanced light emission at the band of frequencies when the photonic crystal is heated. The dielectric material can be a metal, such as tungsten. The spectral properties of the light source can be easily tuned by modification of the photonic crystal structure and materials. The photonic crystal light source can be heated electrically or other heating means. The light source can further include additional photonic crystals that exhibit enhanced light emission at a different band of frequencies to provide for color mixing. The photonic crystal light source may have applications in optical telecommunications, information displays, energy conversion, sensors, and other optical applications.

Fleming, James G. (Albuquerque, NM); Lin, Shawn-Yu (Albuquerque, NM); Bur, James A. (Corrales, NM)

2004-07-27T23:59:59.000Z

343

Advances in Lighting  

E-Print Network (OSTI)

Increasing electricity costs have made a significant impact on lighting. The Illuminating Engineering society (I.E.S.) and the lighting industry are producing new standards, procedures and products to make lighting more appropriate and energy efficient. This paper will describe the factors which affect the performance of lighting systems, introduce the new I.E.S. procedures for selecting illuminance values and lighting power limits, and illustrate some of the recent developments in the lighting industry. The importance of efficient lighting may be measured by the potential reduction in the electrical demand, and energy consumed. Since it also represents a visible use (or misuse) of energy, it may also reflect on other aspects of a company's energy management program.

Tumber, A. J.

1981-01-01T23:59:59.000Z

344

Evolution in lighting  

SciTech Connect

Lights consume 20-25% of the nation's electricity, establishing strong incentives to develop more efficient lighting strategies. Attention is turning to where, when, and how we light our environment, and the potential savings add up to half the lighting load nationwide. Some types of lamp are more efficient than others, but characteristics other than energy consumption may dictate where they can be used. Current lighting strategies consider task requirements, light quality, and the potential for daylighting. Energy management systems that control the timing and intensity of light and new types of energy-efficient bulbs and fixtures are increasingly attractive to consumers. The effort will require continued research and the awareness of decision makers. 4 references, 8 figures.

Lihach, N.; Pertusiello, S.

1984-06-01T23:59:59.000Z

345

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network (OSTI)

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

346

Lighting in Commercial Buildings, 1986  

Gasoline and Diesel Fuel Update (EIA)

6 Lighting in Commercial Buildings Lighting in Commercial Buildings --1986 Overview Full Report and Tables Detailed analysis of energy consumption for lighting for U.S. commercial...

347

Energy Basics: Lighting and Daylighting  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Lighting Daylighting Passive Solar Design Space Heating & Cooling Water Heating Lighting and Daylighting Buildings can be lit in two ways: by using artificial lighting, or by...

348

Lighting Group: Sources and Ballasts  

NLE Websites -- All DOE Office Websites (Extended Search)

incorporating LEDs into tomorrows task lights, to reducing light entrapment within the LED, to fundamental research into how Organic Lighting Emitting Diodes operate. LED and...

349

Energy Basics: Lighting and Daylighting  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

by using artificial lighting, or by using daylighting, or the process of using natural sunlight, windows, and skylights to provide lighting. Learn more about: Lighting Daylighting...

350

Solid-State Lighting: Solid-State Lighting Manufacturing Workshop  

NLE Websites -- All DOE Office Websites (Extended Search)

Solid-State Lighting Solid-State Lighting Manufacturing Workshop to someone by E-mail Share Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on Facebook Tweet about Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on Twitter Bookmark Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on Google Bookmark Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on Delicious Rank Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on Digg Find More places to share Solid-State Lighting: Solid-State Lighting Manufacturing Workshop on AddThis.com... Conferences & Meetings Past Conferences Presentations Publications Webcasts Videos Tools Solid-State Lighting Manufacturing Workshop Nearly 200 lighting industry leaders, chip makers, fixture and component

351

Lighting the Way with Compact Fluorescent Lighting | Department...  

NLE Websites -- All DOE Office Websites (Extended Search)

and compact fluorescent lights. And I've already purchased a few of the new light emitting diode (LED) solid-state lighting lights-but that's the topic of a future blog. Stay...

352

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

353

LightBox -Exploring Interaction Modalities with Colored Light  

E-Print Network (OSTI)

-bright multi- colored light-emitting diodes (LEDs) of our system can generate any visible lighting color

354

Optical anisotropy of InAs/GaSb broken-gap quantum wells  

Science Conference Proceedings (OSTI)

We investigate in detail the optical anisotropy of absorption of linearly polarized light in InAs/GaSb quantum wells grown on GaSb along the [001] direction, which can be used as an active region of different laser structures. The energy level positions, the wave functions, the optical matrix elements, and the absorption coefficients are calculated using the eight-band k {center_dot} p model and the Burt-Foreman envelope function theory. In these calculations, the Schroedinger and Poisson equations are solved self-consistently taking the lattice-mismatched strain into account. We find that a realistic Hamiltonian, which has the C{sub 2v} symmetry, results in considerable anisotropy of optical matrix elements for different directions of light polarization and different directions of the initial-state in-plane wave vector, including low-symmetry directions. We trace how the optical matrix elements and absorption are modified when spin-orbit interaction and important symmetry breaking mechanisms are taken into account (structural inversion asymmetry, bulk inversion asymmetry, and interface Hamiltonian). These mechanisms result in an almost 100% anisotropy of the absorption coefficients as the light polarization vector rotates in the plane of the structure and in a plane normal to the interfaces.

Zakharova, A. A., E-mail: anna.alex.zakharova@gmail.com; Semenikhin, I. A. [Russian Academy of Sciences, Institute of Physics and Technology (Russian Federation); Chao, K. A. [Lund University, Department of Physics (Sweden)

2012-05-15T23:59:59.000Z

355

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes  

E-Print Network (OSTI)

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

2013-05-06T23:59:59.000Z

356

Recent progress in InGaAsSb/GaSb TPV devices  

DOE Green Energy (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

357

Lighting the Night: Technology, Urban Life and the Evolution of Street Lighting [Light in Place  

E-Print Network (OSTI)

May 1912), 783. 8. "New Street Lights Increase Trade 3 5 Perlight, including street light, became part of America'sBeautiful-inspired street lights graced wealthy residen

Holden, Alfred

1992-01-01T23:59:59.000Z

358

Lighting the Night: Technology, Urban Life and the Evolution of Street Lighting [Light in Place  

E-Print Network (OSTI)

Electrical 16. "Highway Lighting by So dium Vapor Lamps,"Possibilities of Street: Lighting Improve ments," TheLaunches Broad Street Lighting Promotion Campaign," The

Holden, Alfred

1992-01-01T23:59:59.000Z

359

GaNPAs Solar Cells Lattice-Matched To GaP: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Geisz, J. F.; Friedman, D. J.; Kurtz, S.

2002-05-01T23:59:59.000Z

360

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Lighting Research Group: Facilities  

NLE Websites -- All DOE Office Websites (Extended Search)

Facilities Facilities Lighting Research Facilities at LBNL gonio-photometer Gonio-photometer We use this device to measure the intensity and direction of the light from a lamp or fixture. integrating sphere Integrating sphere This instrument allows us to get a fast and accurate measurement of the total light output of a lamp. We are not able to determine the direction of the light, only the intensity. power analyzer Power analyzer We use our power analyzer with the lamps in the gonio-photometer to measure input power, harmonic distortion, power factor, and many other signals that tell us how well a lamp is performing. spectro-radiometer Spectro-radiometer This device measures not only the intensity of a light source but also the intensity of the light at each wavelength.

362

Lighting Group: Software  

NLE Websites -- All DOE Office Websites (Extended Search)

Software Software Lighting Software The Lighting Group has developed several computer programs in the course of conducting research on energy efficient lighting. Several of these programs have proven useful outside the research environment. One of the most popular programs for advanced lighting applications is Radiance. For more information on this program and its availability, click on the link below. RADIANCE Radiance is a suite of programs for the analysis and visualization of lighting in design. The primary advantage of Radiance over simpler lighting calculation and rendering tools is that there are no limitations on the geometry or the materials that may be simulated. Radiance is used by architects and engineers to predict illumination, visual quality and appearance of innovative design spaces, and by researchers to evaluate new

363

High-Intensity Discharge Lighting  

Energy.gov (U.S. Department of Energy (DOE))

High-intensity discharge (HID) lighting provides the highest efficacy and longest service life of any lighting type. It can save 75%-90% of lighting energy when it replaces incandescent lighting.

364

Arnold Schwarzenegger LIGHTING RESEARCH PROGRAM  

E-Print Network (OSTI)

Project Summaries ELEMENT 2: ADVANCE LIGHTING TECHNOLOGIES PROJECT 2.1 LIGHT EMITTING DIODE (LED light emitting diodes (LED) technology for general lighting applications by developing a task lamp

365

Solid-State Lighting: Tools  

NLE Websites -- All DOE Office Websites (Extended Search)

about Solid-State Lighting: Tools on Twitter Bookmark Solid-State Lighting: Tools on Google Bookmark Solid-State Lighting: Tools on Delicious Rank Solid-State Lighting: Tools on...

366

Solid-State Lighting: News  

NLE Websites -- All DOE Office Websites (Extended Search)

about Solid-State Lighting: News on Twitter Bookmark Solid-State Lighting: News on Google Bookmark Solid-State Lighting: News on Delicious Rank Solid-State Lighting: News on...

367

Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

Pedestrian-Friendly Nighttime Pedestrian-Friendly Nighttime Lighting to someone by E-mail Share Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on Facebook Tweet about Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on Twitter Bookmark Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on Google Bookmark Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on Delicious Rank Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on Digg Find More places to share Solid-State Lighting: Pedestrian-Friendly Nighttime Lighting on AddThis.com... Conferences & Meetings Presentations Publications Webcasts Videos Tools Pedestrian-Friendly Nighttime Lighting This November 19, 2013 webinar presented issues and considerations related to pedestrian-friendly nighttime lighting, such as color rendering, safety,

368

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

369

Advanced Light Sources  

Science Conference Proceedings (OSTI)

In the generation of artificial light using electric lamps, photometric and color performance have been paramount in lamp design, manufacturing, measurement, lighting design, and visual perception. Many designers and researchers have strived to understand how light and color are generated, related, and to improve them. This has stemmed from the development of incandescent lamps, halogen lamps, linear fluorescent lamps, high-intensity discharge (HID) lamps, and compact fluorescent lamps (CFLs) among other...

2008-03-31T23:59:59.000Z

370

Advanced Lighting Technologies  

Science Conference Proceedings (OSTI)

This report continues the technical assessment of advanced lighting technologies in the following product areasdimmable light-emitting diode (LED) screw-in replacement lamp, hybrid compact fluorescent lamp/halogen screw-in replacement lamp, replacement recessed can LED downlight, organic LED (OLED) disc, replacement mini high-intensity discharge (HID) lamp and ballast system, and solid-state plasma lighting (miniature HID technology) high-bay fixture. The research in this project helps to demonstrate how...

2011-12-21T23:59:59.000Z

371

Total Light Management  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Light Management Light Management Why is saving Energy Important World Electricity Consumption (2007) Top 20 Countries 0 500 1000 1500 2000 2500 3000 3500 4000 4500 U n i t e d S t a t e s C h i n a J a p a n R u s s i a I n d i a G e r m a n y C a n a d a A f r i c a F r a n c e B r a z i l K o r e a , S o u t h U n i t e d K i n g d o m I t a l y S p a i n A u s t r a l i a T a i w a n S o u t h A f r i c a M e x i c o S a u d i A r a b i a I r a n Billion kWh Source: US DOE Energy Information Administration Lighting Control Strategies 4 5 6 Occupancy/Vacancy Sensing * The greatest energy savings achieved with any lighting fixture is when the lights are shut off * Minimize wasted light by providing occupancy sensing or vacancy sensing 7 8 Daylight Harvesting * Most commercial space has enough natural light flowing into it, and the amount of artificial light being generated can be unnecessary * Cut back on the production of artificial lighting by

372

Light truck forecasts  

SciTech Connect

The recent dramatic increase in the number of light trucks (109% between 1963 and 1974) has prompted concern about the energy consequences of the growing popularity of the light truck. An estimate of the future number of light trucks is considered to be a reasonable first step in assessing the energy impact of these vehicles. The monograph contains forecasts based on two models and six scenarios. The coefficients for the models have been derived by ordinary least squares regression of national level time series data. The first model is a two stage model. The first stage estimates the number of light trucks and cars (together), and the second stage applies a share's submodel to determine the number of light trucks. The second model is a simultaneous equation model. The two models track one another remarkably well, within about 2%. The scenarios were chosen to be consistent with those used in the Lindsey-Kaufman study Projection of Light Truck Population to Year 2025. Except in the case of the most dismal economic scenario, the number of light trucks is expected to increase from the 1974 level of 0.09 light truck per person to about 0.12 light truck per person in 1995.

Liepins, G.E.

1979-09-01T23:59:59.000Z

373

SITE LIGHTING FOUNDATIONS  

SciTech Connect

The purpose of this analysis is to design structural foundations for the Site Lighting. This analysis is in support of design drawing BABBDF000-01717-2100-23016.

M. Gomez

1995-01-17T23:59:59.000Z

374

Advanced Demand Responsive Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

Energy Efficiency Program and Market Trends High Technology and Industrial Buildings Lighting Systems Residential Buildings Simulation Tools Sustainable Federal Operations Windows...

375

Photovoltaic lighting system performance  

DOE Green Energy (OSTI)

The performance of 21 PV-powered low pressure sodium lighting systems on a multi-use has been documented in this paper. Specific areas for evaluation include the vandal resistant PV modules, constant voltage and on/off PV charge controllers, flooded deep-cycle lead-antimony and valve regulated lead-acid (VLRA) gel batteries, and low pressure sodium ballasts and lights. The PV lighting system maintenance intervals and lessons learned have been documented over the past 2.5 years. The above performance data has shown that with careful hardware selection, installation, and maintenance intervals the PV lighting systems will operate reliably.

Harrington, S.R.; Hund, T.D.

1996-06-01T23:59:59.000Z

376

Faster Than Light?  

E-Print Network (OSTI)

It is argued that special relativity remains a viable physical theory even when there is permitted signals traveling faster than light.

Robert Geroch

2010-05-10T23:59:59.000Z

377

Energy Basics: Fluorescent Lighting  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

& Cooling Water Heating Fluorescent Lighting Fluorescent lamps use 25%-35% of the energy used by incandescent lamps to provide the same amount of illumination (efficacy of...

378

NIST Stray light correction  

Science Conference Proceedings (OSTI)

... A correction, which can be done in real time, can reduce errors due to stray light by more than one order of magnitude. ...

2012-10-02T23:59:59.000Z

379

Evaluation of GaN substrates grown in supercritical basic ammonia  

SciTech Connect

GaN crystals grown by the basic ammonothermal method were investigated for their use as substrates for device regrowth. X-ray diffraction analysis indicated that the substrates contained multiple grains while secondary ion mass spectroscopy (SIMS) revealed a high concentration of hydrogen, oxygen, and sodium. Despite these drawbacks, the emission from the light emitting diode structures grown by metal organic chemical vapor deposition on both the c-plane and m-plane epitaxial wafers was demonstrated. The SIMS depth profiles showed that the diffusion of the alkali metal from the substrate into the epitaxial film was small, especially in the m-direction.

Saito, Makoto; Yamada, Hisashi; Iso, Kenji; Sato, Hitoshi; Hirasawa, Hirohiko; Kamber, Derrick S.; Hashimoto, Tadao; Baars, Steven P. den; Speck, James S.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2009-02-02T23:59:59.000Z

380

Rapid microwave hydrothermal synthesis of ZnGa{sub 2}O{sub 4} with high photocatalytic activity toward aromatic compounds in air and dyes in liquid water  

Science Conference Proceedings (OSTI)

ZnGa{sub 2}O{sub 4} was synthesized from Ga(NO{sub 3}){sub 3} and ZnCl{sub 2} via a rapid and facile microwave-assisted hydrothermal method. The photocatalytic properties of the as-prepared ZnGa{sub 2}O{sub 4} were evaluated by the degradation of pollutants in air and aqueous solution under ultraviolet (UV) light illumination. The results demonstrated that ZnGa{sub 2}O{sub 4} had exhibited efficient photocatalytic activities higher than that of commercial P25 (Degussa Co.) in the degradation of benzene, toluene, and ethylbenzene, respectively. In the liquid phase degradation of dyes (methyl orange, Rhodamine B, and methylene blue), ZnGa{sub 2}O{sub 4} has also exhibited remarkable activities higher than that of P25. After 32 min of UV light irradiation, the decomposition ratio of methyl orange (10 ppm, 150 mL) over ZnGa{sub 2}O{sub 4} (0.06 g) was up to 99%. The TOC tests revealed that the mineralization ratio of MO (10 ppm, 150 mL) was 88.1% after 90 min of reaction. A possible mechanism of the photocatalysis over ZnGa{sub 2}O{sub 4} was also proposed. - Graphical abstract: In the degradation of RhB under UV light irradiation, ZnGa{sub 2}O{sub 4} had exhibited efficient photo-activity, and after only 24 min of irradiation the decomposition ratio was up to 99.8%. Highlights: Black-Right-Pointing-Pointer A rapid and facile M-H method to synthesize ZnGa{sub 2}O{sub 4} photocatalyst. Black-Right-Pointing-Pointer The photocatalyst exhibits high activity toward benzene and dyes. Black-Right-Pointing-Pointer The catalyst possesses more surface hydroxyl sites than TiO{sub 2} (P25). Black-Right-Pointing-Pointer Deep oxidation of different aromatic compounds and dyes over catalyst.

Sun Meng [School of Resources and Environment, University of Jinan, Jinan 250022 (China); Research Institute of Photocatalysis, State Key Laboratory Breeding Base of Photocatalysis, Fuzhou University, Fuzhou 350002 (China); Li Danzhen, E-mail: dzli@fzu.edu.cn [Research Institute of Photocatalysis, State Key Laboratory Breeding Base of Photocatalysis, Fuzhou University, Fuzhou 350002 (China); Zhang Wenjuan; Chen Zhixin; Huang Hanjie; Li Wenjuan; He Yunhui; Fu Xianzhi [Research Institute of Photocatalysis, State Key Laboratory Breeding Base of Photocatalysis, Fuzhou University, Fuzhou 350002 (China)

2012-06-15T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Lakeview Light and Power - Commercial Lighting Rebate Program | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Lakeview Light and Power - Commercial Lighting Rebate Program Lakeview Light and Power - Commercial Lighting Rebate Program Lakeview Light and Power - Commercial Lighting Rebate Program < Back Eligibility Commercial Fed. Government Local Government Nonprofit State Government Savings Category Appliances & Electronics Commercial Lighting Lighting Program Info Funding Source Funded by Bonneville Power Administration Expiration Date 9/1/2013 State District of Columbia Program Type Utility Rebate Program Rebate Amount Commercial Lighting Installation: Up to 70% of cost Provider Lakeview Light and Power Lakeview Light and Power offers a commercial lighting rebate program. Rebates apply to the installation of energy efficient lighting retrofits in non-residential buildings. The rebate program is funded by BPA and ends in September of 2010 or earlier if the funding is exhausted. Lakeview Light

382

Explosively pumped laser light  

DOE Patents (OSTI)

A single shot laser pumped by detonation of an explosive in a shell casing. The shock wave from detonation of the explosive causes a rare gas to luminesce. The high intensity light from the gas enters a lasing medium, which thereafter outputs a pulse of laser light to disable optical sensors and personnel.

Piltch, Martin S. (Los Alamos, NM); Michelotti, Roy A. (Los Alamos, NM)

1991-01-01T23:59:59.000Z

383

The gravity of light  

E-Print Network (OSTI)

A solution of the old problem raised by Tolman, Ehrenfest, Podolsky and Wheeler, concerning the lack of attraction of two light pencils "moving parallel", is proposed, considering that the light can be source of nonlinear gravitational waves corresponding (in the would be quantum theory of gravity) to spin-1 massless particles.

G. Sparano; G. Vilasi; S. Vilasi

2010-09-12T23:59:59.000Z

384

Developing architectural lighting representations  

Science Conference Proceedings (OSTI)

This paper reports on the development of a visualization system for architectural lighting designers. It starts by motivating the problem as both complex in its physics and social organization. Three iterations of prototypes for displaying time and space ... Keywords: architectural lighting design, energy efficiency, ethnographic fieldwork, information visualization, qualitative analysis

Daniel C. Glaser; Roger Tan; John Canny; Ellen Yi-Luen Do

2003-10-01T23:59:59.000Z

385

Light intensity compressor  

DOE Patents (OSTI)

In a system for recording images having vastly differing light intensities over the face of the image, a light intensity compressor is provided that utilizes the properties of twisted nematic liquid crystals to compress the image intensity. A photoconductor or photodiode material that is responsive to the wavelength of radiation being recorded is placed adjacent a layer of twisted nematic liquid crystal material. An electric potential applied to a pair of electrodes that are disposed outside of the liquid crystal/photoconductor arrangement to provide an electric field in the vicinity of the liquid crystal material. The electrodes are substantially transparent to the form of radiation being recorded. A pair of crossed polarizers are provided on opposite sides of the liquid crystal. The front polarizer linearly polarizes the light, while the back polarizer cooperates with the front polarizer and the liquid crystal material to compress the intensity of a viewed scene. Light incident upon the intensity compressor activates the photoconductor in proportion to the intensity of the light, thereby varying the field applied to the liquid crystal. The increased field causes the liquid crystal to have less of a twisting effect on the incident linearly polarized light, which will cause an increased percentage of the light to be absorbed by the back polarizer. The intensity of an image may be compressed by forming an image on the light intensity compressor.

Rushford, Michael C. (Livermore, CA)

1990-01-01T23:59:59.000Z

386

Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio  

Science Conference Proceedings (OSTI)

Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment.

Park, K. W. [School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Park, C. Y. [Micro Systems Laboratory, Samsung Advanced Institute of Technology, Yongin 446-712 (Korea, Republic of); Lee, Y. T. [School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Photonics and Applied Physics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2012-07-30T23:59:59.000Z

387

Hybrid lighting: Illuminating our future  

SciTech Connect

Hybrid lighting is a combination of natural and artificial illumination to be used indoors for all lighting needs. Ideally, hybrid lighting is effectively indistinguishable from standard artificial lighting except in quality and cost, where it will likely be an improvement. Hybrid lighting systems are produced by a combination of four technologies: collecting natural light, generating artificial light, transporting and distributing light to where it is needed, and controlling the amounts of both natural and artificial light continuously during usage. Lighting demands a large fraction of our energy needs. If we can control or decrease this demand, we are able to accommodate societal growth without energy demand growth.

Cates, M.R.

1996-12-31T23:59:59.000Z

388

Exploring Lighting Spaces  

E-Print Network (OSTI)

We present a simple system for interactively specifying lighting parameters, including position, for high-quality image synthesis. Unlikeinverse approaches to the lighting-design problem, we do not require the user to indicate a priori the desired illuminative characteristics of an image. In our approach the computer proposes, culls, and organizes a set of candidate lights automatically, using an elementary measure of image similarityasthe basis for both culling and organization. The user then browses the set of candidate-light images, selects which lights to include, and combines them as desired. This work is a particular instance of a general strategy --- sampling a design space broadly and intelligently and organizing the results for rapid browsing by the user --- that may be applicable to many other design problems in computer graphics.

T. Kang; J. Seims; J. Marks; S. Shieber

1996-01-01T23:59:59.000Z

389

Microsoft Word - BSA Comm Rev10.docx  

NLE Websites -- All DOE Office Websites (Extended Search)

0; (Jun-12) 1 of 12 0; (Jun-12) 1 of 12 BROOKHAVEN SCIENCE ASSOCIATES, LLC GENERAL TERMS AND CONDITIONS FOR COMMERCIAL ITEMS AT BROOKHAVEN NATIONAL LABORATORY Table of Contents Article 1 DEFINITIONS ................................................................................................................... 2 Article 2 ORDER OF PRECEDENCE ............................................................................................. 2 Article 3 ACCEPTANCE OF AGREEMENT, SURVIVABILITY ................................................. 3

390

BGE_Comments_CurrentComms.pdf  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Reading (based Reading (based on hourly reads) Cellular network 5000 30 minutes 19.2K >90% <15 sec >95% 4 1 2 Direct Load Control 22 250K 8 hours 1K 100% <120 sec >99% 2 1 2 Real time pricing At the customer premises At charging stations 53 1755 8 hours 9600 bps >90% 5 sec <5 per mo. >95% 5 2 1 CBC-5000 2330 CBC-7000 1621 LVC N/A 638 4 hours N/A N/A N/A N/A N/A N/A N/A See comment See comment N/A N/A Customer Calls N/A N/A N/A N/A N/A N/A N/A N/A Applications Distributed Generation Management in-Home Display of Customer Usage Automated Feeder Switching Transformer Monitoring Voltage and Current Monitoring 8 hours 1K >60% Capacitor Bank Control Fault Current Indicator 10 sec >99% 4 1 2 Quantified Estimates Ranking of Relative Importance of Each Estimated Number of End Point Devices to

391

NANO COMM PREZ (compatible).ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

of Science U.S. Department of Energy Products 2006 - 212 manufacturer-indentified, nano- enabled consumer products Today - More than 610 consumer products Each week -...

392

Microsoft Word - BSA Comm Rev9.docx  

NLE Websites -- All DOE Office Websites (Extended Search)

9; (Aug. 2011) 1 of 10 BROOKHAVEN SCIENCE ASSOCIATES, LLC GENERAL TERMS AND CONDITIONS FOR COMMERCIAL ITEMS AT BROOKHAVEN NATIONAL LABORATORY 1. DEFINITIONS. The following terms...

393

Solid-State Lighting Issue 15: Selected Business & Technology News  

NLE Websites -- All DOE Office Websites (Extended Search)

9/2002 9/2002 | Table of Contents | Abstracts | Credit and Disclaimer | ISSUE 15: BUSINESS AND TECHNOLOGY NEWS (September - November 2002) A selection of news appears in this section. A. Developer News B. New Products C. Research Results D. Government Activities and Funding News E. Overview Articles Where possible, links to full-text articles and press releases have been included in the abstracts. Click on the links in the table below to go directly to the abstract. Table of Contents: Business and Technology News A. Developer News · Amtech Lighting Services will provide LED traffic signals for City of Dallas, TX. · ATMI received a $9.46 million ONR grant to develop AlGaN/GaN HEMTs on 4-inch GaN and SiC substrates, part of DARPA’s Wide Bandgap Semiconductor Technology Initiative.

394

Light emission patterns from stadium-shaped semiconductor microcavity lasers  

E-Print Network (OSTI)

We study light emission patterns from stadium-shaped semiconductor (GaAs) microcavity lasers theoretically and experimentally. Performing systematic wave calculations for passive cavity modes, we demonstrate that the averaging by low-loss modes, such as those realized in multi-mode lasing, generates an emission pattern in good agreement with the ray model's prediction. In addition, we show that the dependence of experimental far-field emission patterns on the aspect ratio of the stadium cavity is well reproduced by the ray model.

Susumu Shinohara; Takehiro Fukushima; Takahisa Harayama

2007-06-01T23:59:59.000Z

395

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from {approx}1 x 10{sup 7} to {approx}5 x 10{sup 8} cm{sup -2} across the substrate. Typical diameters are {approx}110 nm for GaP NWs and {approx}220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is {approx}0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Li, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Tu, C. W. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2012-01-30T23:59:59.000Z

396

Light and Bread Mold  

NLE Websites -- All DOE Office Websites (Extended Search)

Light and Bread Mold Light and Bread Mold Name: CHASE Location: N/A Country: N/A Date: N/A Question: HOW CAN I EFICTIVELY TEST THE EFFECTS OF LIGHT ON BREAD MOLD? Replies: Hello Chase, In order to test the effects of light on bread mould you need to set up an experiment. There are two things you need to have in your experiment to make it a good experiment: 1. A 'control'. 2. Replicates 1. The 'control' Obviously in order to test the effects of light on bread mold you will need to actually shine some light on some bread mold and see what happens. This is your 'treatment'. However, it is vitally important that you know what would have happened without the treatment (in this case added light). Let's pretend that you do a test a you find that the bread mold under the light actually dies. How do you know if your bread mold died because light was added or because at that time of year all bread mold would die naturally or because by adding light you caused the temperature to rise and that killed the bread mold? The answer is that you do not know unless you have taken the trouble to find out with anouther test called the 'control'. The 'control' is a piece of bread mold, identical to the 'treatment' bread mold, which is placed in identical conditions to the 'treatment' piece of bread mold except that light is removed. Your 'control' piece of bread mold will need to be (to the best of your abillity) at the same temperature, in the same area, at similar humidity, etc. Part of the skill of designing a scientific experiment is being able think of all the possible things which might be affecting the bread mold and keeping them the same in both the 'treatment' and the 'control' (except, of course, for the presence of light) so that when you find a difference between the 'treatment' and the 'control' you are sure that it is the result of the light rather than something else.

397

Columbia Water and Light - HVAC and Lighting Efficiency Rebates |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Columbia Water and Light - HVAC and Lighting Efficiency Rebates Columbia Water and Light - HVAC and Lighting Efficiency Rebates Columbia Water and Light - HVAC and Lighting Efficiency Rebates < Back Eligibility Commercial Industrial Savings Category Heating & Cooling Commercial Heating & Cooling Cooling Heat Pumps Appliances & Electronics Commercial Lighting Lighting Maximum Rebate Lighting: 50% of invoiced cost up to $22,500 Program Info State Missouri Program Type Utility Rebate Program Rebate Amount HVAC Replacements: $570 - $3,770 Lighting: $300/kW reduction or half of project cost Provider Columbia Water and Light Columbia Water and Light (CWL) offers rebates to its commercial and industrial customers for the purchase of high efficiency HVAC installations and efficient lighting. Incentives for certain measures are based upon the

398

Induction Lighting: An Old Lighting Technology Made New Again | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Induction Lighting: An Old Lighting Technology Made New Again Induction Lighting: An Old Lighting Technology Made New Again Induction Lighting: An Old Lighting Technology Made New Again July 27, 2009 - 5:00am Addthis John Lippert Induction lighting is one of the best kept secrets in energy-efficient lighting. Simply stated, induction lighting is essentially a fluorescent light without electrodes or filaments, the items that frequently cause other bulbs to burn out quickly. Thus, many induction lighting units have an extremely long life of up to 100,000 hours. To put this in perspective, an induction lighting system lasting 100,000 hours will last more than 11 years in continuous 24/7 operation, and 25 years if operated 10 hours a day. The technology, however, is far from new. Nikola Tesla demonstrated induction lighting in the late 1890s around the same time that his rival,

399

Reading Municipal Light Department - Business Lighting Rebate Program |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Reading Municipal Light Department - Business Lighting Rebate Reading Municipal Light Department - Business Lighting Rebate Program Reading Municipal Light Department - Business Lighting Rebate Program < Back Eligibility Agricultural Commercial Fed. Government Industrial Institutional Local Government Nonprofit Schools State Government Savings Category Appliances & Electronics Commercial Lighting Lighting Maximum Rebate Commercial Customers: $10,000 per calendar year Municipal Customers: $15,000 per calendar year Program Info State Massachusetts Program Type Utility Rebate Program Rebate Amount T-8/T-5 Lamp with Electronic Ballasts: $11 - $35/fixture Interior High Output Lamp with Electronic Ballasts: $100/fixture De-lamping: $4 - $9/lamp Lighting Sensors: $20/sensor LED Exit Signs: $20/fixture Provider Incentive Programs

400

Lighting fundamentals handbook: Lighting fundamentals and principles for utility personnel  

SciTech Connect

Lighting accounts for approximately 30% of overall electricity use and demand in commercial buildings. This handbook for utility personnel provides a source of basic information on lighting principles, lighting equipment, and other considerations related to lighting design. The handbook is divided into three parts. Part One, Physics of Light, has chapters on light, vision, optics, and photometry. Part Two, Lighting Equipment and Technology, focuses on lamps, luminaires, and lighting controls. Part Three, Lighting Design Decisions, deals with the manner in which lighting design decisions are made and reviews relevant methods and issues. These include the quantity and quality of light needed for visual tasks, calculation methods for verifying that lighting needs are satisfied, lighting economics and methods for evaluating investments in efficient lighting systems, and miscellaneous design issues including energy codes, power quality, photobiology, and disposal of lighting equipment. The handbook contains a discussion of the role of the utility in promoting the use of energy-efficient lighting. The handbook also includes a lighting glossary and a list of references for additional information. This convenient and comprehensive handbook is designed to enable utility lighting personnel to assist their customers in developing high-quality, energy-efficient lighting systems. The handbook is not intended to be an up-to-date reference on lighting products and equipment.

Eley, C.; Tolen, T. (Eley (Charles) Associates, San Francisco, CA (United States)); Benya, J.R. (Luminae Souter Lighting Design, San Francisco, CA (United States))

1992-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

EK101 Engineering Light Project: Evaluate Residential Lighting  

E-Print Network (OSTI)

the same level of performance in the LED Lighting product solution (retrofit light bulb, ceiling lighting minute of networking ­ refreshments will be served) Thinking Differently about LED Lighting Dr. Matthew A, LEDs have emerged as the next "filament" for the lighting industry. While LEDs are not new

Bifano, Thomas

402

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

403

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amlie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganire, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benot

404

Lighting Group: Controls: IBECS  

NLE Websites -- All DOE Office Websites (Extended Search)

IBECS IBECS Integrated Building Environmental Communications System Objective The overall technical goal of the IBECS project is to develop an integrated building equipment communications network that will allow appropriate automation of lighting and envelope systems to increase energy efficiency, improve building performance, and enhance occupant experience in the space. This network will provide a low-cost means for occupants to control local lighting and window systems, thereby improving occupant comfort, satisfaction and performance. A related goal is to improve existing lighting control components and accelerate development of new daylighting technologies that will allow daylighting to be more extensively applied to a larger proportion of building floor space.

405

White light velocity interferometer  

DOE Patents (OSTI)

The invention is a technique that allows the use of broadband and incoherent illumination. Although denoted white light velocimetry, this principle can be applied to any wave phenomenon. For the first time, powerful, compact or inexpensive sources can be used for remote target velocimetry. These include flash and arc lamps, light from detonations, pulsed lasers, chirped frequency lasers, and lasers operating simultaneously in several wavelengths. The technique is demonstrated with white light from an incandescent source to measure a target moving at 16 m/s. 41 figs.

Erskine, D.J.

1997-06-24T23:59:59.000Z

406

White light velocity interferometer  

DOE Patents (OSTI)

The invention is a technique that allows the use of broadband and incoherent illumination. Although denoted white light velocimetry, this principle can be applied to any wave phenomenon. For the first time, powerful, compact or inexpensive sources can be used for remote target velocimetry. These include flash and arc lamps, light from detonations, pulsed lasers, chirped frequency lasers, and lasers operating simultaneously in several wavelengths. The technique is demonstrated with white light from an incandescent source to measure a target moving at 16 m/s.

Erskine, David J. (Oakland, CA)

1997-01-01T23:59:59.000Z

407

White light velocity interferometer  

DOE Patents (OSTI)

The invention is a technique that allows the use of broadband and incoherent illumination. Although denoted white light velocimetry, this principle can be applied to any wave phenomenon. For the first time, powerful, compact or inexpensive sources can be used for remote target velocimetry. These include flash and arc lamps, light from detonations, pulsed lasers, chirped frequency lasers, and lasers operating simultaneously in several wavelengths. The technique is demonstrated with white light from an incandescent source to measure a target moving at 16 m/s.

Erskine, David J. (Oakland, CA)

1999-01-01T23:59:59.000Z

408

AUTOMATIC LIGHT CONTROL  

DOE Patents (OSTI)

A control system for a projection kinescope used in a facsimile scanning system and, in particular, meams for maintaining substantially constant the light emanating from the flying spot on the face of the kinescope are described. In general, the invention provides a feeler member disposed in such a position with respect to a projecting lens as to intercept a portion of the light striking the lens. Suitable circuitry in conjunction with a photomultiplier tube provides a signal proportional to the light intensity of the flying spot. The grid bias on the kinescope is controlled by this signal to maintain the intensity of the spot substantially constant.

Artzt, M.

1957-08-27T23:59:59.000Z

409

Green Light Pulse Oximeter  

DOE Patents (OSTI)

A reflectance pulse oximeter that determines oxygen saturation of hemoglobin using two sources of electromagnetic radiation in the green optical region, which provides the maximum reflectance pulsation spectrum. The use of green light allows placement of an oximetry probe at central body sites (e.g., wrist, thigh, abdomen, forehead, scalp, and back). Preferably, the two green light sources alternately emit light at 560 nm and 577 nm, respectively, which gives the biggest difference in hemoglobin extinction coefficients between deoxyhemoglobin, RHb, and oxyhemoglobin, HbO.sub.2.

Scharf, John Edward (Oldsmar, FL)

1998-11-03T23:59:59.000Z

410

Entangled states of light  

E-Print Network (OSTI)

These notes are more or less a faithful representation of my talk at the Workshop on ``Quantum Coding and Quantum Computing'' held at the University of Virginia. As such it is an introduction for non-physicists to the topics of the quantum theory of light and entangled states of light. In particular, I discuss the photon concept and what is really entangled in an entangled state of light (it is not the photons). Moreover, I discuss an example that highlights the peculiar behavior of entanglement in an infinite-dimensional Hilbert space.

S. J. van Enk

2004-03-16T23:59:59.000Z

411

White light velocity interferometer  

DOE Patents (OSTI)

The invention is a technique that allows the use of broadband and incoherent illumination. Although denoted white light velocimetry, this principle can be applied to any wave phenomenon. For the first time, powerful, compact or inexpensive sources can be used for remote target velocimetry. These include flash and arc lamps, light from detonations, pulsed lasers, chirped frequency lasers, and lasers operating simultaneously in several wavelengths. The technique is demonstrated with white light from an incandescent source to measure a target moving at 16 m/s. 41 figs.

Erskine, D.J.

1999-06-08T23:59:59.000Z

412

Charge collection in GaAs MESFET circuits using a high energy microbeam  

Science Conference Proceedings (OSTI)

The mechanisms responsible for single event upsets can be studied more realistically in transistors that are part of an integrated test circuit than in single isolated test transistors with fixed biases on all the nodes. Both energetic, heavy ions and focused, pulsed laser light were used to generate transient voltages at a number of different nodes in a GaAs MESFET integrated test circuit. Three-dimensional maps of charge collection regions were generated with the use of the scanning ion microprobe at Gesellschaft fuer Schwerionenforschung (GSI). The results showed that charge was collected from all areas of the circuit, but with different efficiencies at different injection sites. Regions not covered with metal were exposed to pulsed laser light. The resulting transients had pulse shapes similar to those generated by ions and amplitudes that also depended on ion strike location. These results illustrate the usefulness of the ion microprobe technique for obtaining spatial and temporal information about SEU in integrated circuits.

Buchner, S.; Weatherford, T.; Knudson, A.; McDonald, P. [SFA, Landover, MD (United States); Campbell, A.B.; McMorrow, D. [Naval Research Lab., Washington, DC (United States); Fischer, B.; Metzger, S.; Schloegl, M. [Gesellschaft fuer Schwerionenforschung, Darmstadt (Germany)

1996-12-01T23:59:59.000Z

413

Fano Resonance in GaAs 2D Photonic Crystal Nanocavities  

SciTech Connect

We report the results of polarization resolved reflectivity experiments in GaAs air-bridge photonic crystals with L3 cavities. We show that the fundamental L3 cavity mode changes, in a controlled way, from a Lorentzian symmetrical lineshape to an asymmetrical form when the linear polarization of the incident light is rotated in the plane of the crystal. The different lineshapes are well fitted by the Fano asymmetric equation, implying that a Fano resonance is present in the reflectivity. We use the scattering matrix method to model the Fano interference between a localized discrete state (the cavity fundamental mode) and a background of continuum states (the light reflected from the crystal slab in the vicinity of the cavity) with very good agreement with the experimental data.

Valentim, P. T.; Guimaraes, P.S. S. [Departamento de Fisica, Universidade Federal de Minas Gerais, Belo Horizonte (Brazil); Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos Semicondutores - INCT-DISSE (Brazil); Luxmoore, I. J.; Szymanski, D.; Whittaker, D. M.; Fox, A. M.; Skolnick, M. S. [Department of Physics and Astronomy, University of Sheffield, Sheffield (United Kingdom); Vasco, J. P. [Instituto de Fisica, Universidad de Antioquia, Medellin (Colombia); Vinck-Posada, H. [Departamento de Fisica, Facultad de Ciencias, Universidad Nacional de Colombia, Bogota (Colombia)

2011-12-23T23:59:59.000Z

414

Growth orientation dependent photoluminescence of GaAsN alloys  

SciTech Connect

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Sato, Shinichiro [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2012-01-16T23:59:59.000Z

415

Lighting Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Lighting Basics Lighting Basics Lighting Basics August 15, 2013 - 5:12pm Addthis Text Version There are many different types of artificial lights, all of which have different applications and uses. Types of lighting include: Fluorescent Lighting High-intensity Discharge Lighting Incandescent Lighting LED Lighting Low-pressure Sodium Lighting. Which type is best depends on the application. See the chart below for a comparison of lighting types. Lighting Comparison Chart Lighting Type Efficacy (lumens/watt) Lifetime (hours) Color Rendition Index (CRI) Color Temperature (K) Indoors/Outdoors Fluorescent Straight Tube 30-110 7000-24,000 50-90 (fair to good) 2700-6500 (warm to cold) Indoors/outdoors Compact Fluorescent 50-70 10,000 65-88 (good) 2700-6500 (warm to cold) Indoors/outdoors

416

Lighting Renovations | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Lighting Renovations Lighting Renovations Lighting Renovations October 16, 2013 - 4:54pm Addthis When undertaking a lighting renovation in a Federal building, daylighting is the primary renewable energy opportunity. Photovoltaics (PV) also present an excellent opportunity. While this guide focuses on the renewable energy opportunities, energy efficiency may also present amble opportunity for energy and cost savings. Renewable Energy Options for Lighting Renovations Daylighting Photovoltaics Daylighting Daylighting maximizes the use of natural light in a space to reduce the need for artificial lighting. Incorporating daylighting into a lighting strategy should occur during the planning stage of design since it affects all aspects. Ambient light dimming controls are critical in daylighting, since the

417

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

418

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

419

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

420

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization  

DOE Green Energy (OSTI)

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I. [Rensselaer Polytechnic Inst., Troy, NY (United States); Freeman, M.; Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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421

Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells  

Science Conference Proceedings (OSTI)

The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

Baidus, N. V. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Vainberg, V. V. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine); Zvonkov, B. N. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Pylypchuk, A. S., E-mail: pylypchuk@iop.kiev.ua; Poroshin, V. N.; Sarbey, O. G. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

2012-05-15T23:59:59.000Z

422

High-Efficiency Nitride-Based Solid-State Lighting  

SciTech Connect

In this final technical progress report we summarize research accomplished during Department of Energy contract DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. Two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and the Lighting Research Center at Rensselaer Polytechnic Institute (led by Dr. N. Narendran), pursued the goals of this contract from thin film growth, characterization, and packaging/luminaire design standpoints. The UCSB team initially pursued the development of blue gallium nitride (GaN)-based vertical-cavity surface-emitting lasers, as well as ultraviolet GaN-based light emitting diodes (LEDs). In Year 2, the emphasis shifted to resonant-cavity light emitting diodes, also known as micro-cavity LEDs when extremely thin device cavities are fabricated. These devices have very directional emission and higher light extraction efficiency than conventional LEDs. Via the optimization of thin-film growth and refinement of device processing, we decreased the total cavity thickness to less than 1 {micro}m, such that micro-cavity effects were clearly observed and a light extraction efficiency of over 10% was reached. We also began the development of photonic crystals for increased light extraction, in particular for so-called ''guided modes'' which would otherwise propagate laterally in the device and be re-absorbed. Finally, we pursued the growth of smooth, high-quality nonpolar a-plane and m-plane GaN films, as well as blue light emitting diodes on these novel films. Initial nonpolar LEDs showed the expected behavior of negligible peak wavelength shift with increasing drive current. M-plane LEDs in particular show promise, as unpackaged devices had unsaturated optical output power of {approx} 3 mW at 200 mA drive current. The LRC's tasks were aimed at developing the subcomponents necessary for packaging UCSB's light emitting diodes, and packaging them to produce a white light fixture. During the third and final year of the project, the LRC team investigated alternate packaging methods for the white LED device to achieve at least 25 percent more luminous efficacy than traditional white LEDs; conducted optical ray-tracing analyses and human factors studies to determine the best form factor for the white light source under development, in terms of high luminous efficacy and greater acceptance by subjects; and developed a new die encapsulant using silicone-epoxy resins that showed less yellowing and slower degradation. At the conclusion of this project, the LRC demonstrated a new packaging method, called scattered photon extraction (SPE), that produced an average luminous flux and corresponding average efficacy of 90.7 lm and 36.3 lm/W, respectively, compared with 56.5 lm and 22.6 lm/W for a similar commercial white LED package. At low currents, the SPE package emitted white light with an efficacy of over 80 lm/W and had chromaticity values very close to the blackbody locus. The SPE package showed an overall improvement of 61% for this particular comparison, exceeding the LRC's third-year goal of 25% improvement.

Paul T. Fini; Shuji Nakamura

2005-07-30T23:59:59.000Z

423

Peninsula Light Company - Commercial Efficient Lighting Rebate Program |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Peninsula Light Company - Commercial Efficient Lighting Rebate Peninsula Light Company - Commercial Efficient Lighting Rebate Program Peninsula Light Company - Commercial Efficient Lighting Rebate Program < Back Eligibility Commercial Savings Category Appliances & Electronics Commercial Lighting Lighting Program Info State District of Columbia Program Type Utility Rebate Program Rebate Amount General: 30% - 70% of cost Provider Peninsula Light Company Peninsula Light Company (PLC) offers a rebate program for commercial customers who wish to upgrade to energy efficient lighting. Participating customers must be served by PLC commercial service. Customers who upgrade to highly efficient fixtures and systems are eligible to receive a rebate generally covering 30% - 70% of the project cost. These retrofits improve light quality and reduce energy costs in participating facilities. PLC

424

Solid-State Lighting: 2013 Solid-State Lighting Manufacturing...  

NLE Websites -- All DOE Office Websites (Extended Search)

2013 Solid-State Lighting Manufacturing R&D Workshop Presentations and Materials to someone by E-mail Share Solid-State Lighting: 2013 Solid-State Lighting Manufacturing R&D...

425

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

426

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

427

Lots of Light Literature  

NLE Websites -- All DOE Office Websites (Extended Search)

Lots of Light Literature Lots of Light Literature The Teacher Resource Center contains a great variety of resources for all areas of science K-12. For the concepts of light here is a sampling of some of these resources. Science is Elementary - Spring 1995, vol. 6, no. 4. Science is Elementary is produced by the Museum Institute for Teaching Science, 79 Milk Street, Suite 210, Boston, MA 02109-3903. Science is Elementary is a newsletter we have admired for years. The topic of this issue deals with Color and Light. It contains content information to the teacher, trade secrets or teaching tips, "Book Looking" section and the section call "Sciencing" which includes a variety of activities. Science is Elementary is published quarterly. Subscription cost is: $22.00/year.

428

Slow-light solitons  

E-Print Network (OSTI)

A new type of soliton with controllable speed is constructed generalizing the theory of slow-light propagation to an integrable regime of nonlinear dynamics. The scheme would allow the quantum-information transfer between optical solitons and atomic media.

Ulf Leonhardt

2004-08-06T23:59:59.000Z

429

Light Vector Mesons  

E-Print Network (OSTI)

This article reviews the current status of experimental results obtained in the measurement of light vector mesons produced in proton-proton and heavy ion collisions at different energies. The review is focused on two phenomena related to the light vector mesons; the modification of the spectral shape in search of Chiral symmetry restoration and suppression of the meson production in heavy ion collisions. The experimental results show that the spectral shape of light vector mesons are modified compared to the parameters measured in vacuum. The nature and the magnitude of the modification depends on the energy density of the media in which they are produced. The suppression patterns of light vector mesons are different from the measurements of other mesons and baryons. The mechanisms responsible for the suppression of the mesons are not yet understood. Systematic comparison of existing experimental results points to the missing data which may help to resolve the problem.

Alexander Milov

2008-09-23T23:59:59.000Z

430

Energy Basics: Fluorescent Lighting  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Fluorescent Lighting Fluorescent lamps use 25%-35% of the energy used by incandescent lamps to provide the same amount of illumination (efficacy of 30-110 lumens per watt). They...

431

Energy Basics: LED Lighting  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

positivenegative junction of the diode, the electrons slow down to orbit at a lower energy level. The electrons emit the excess energy as photons of light. LEDs are often used...

432

Light Duty Vehicle Pathways  

NLE Websites -- All DOE Office Websites (Extended Search)

in 2030 0 5 10 15 20 25 30 Million BarrelsDay IMPORTS DOMESTIC OIL SUPPLY OIL DEMAND ELECTRICITY RES. & COM. INDUSTRY MISC. TRANSPORT AIR TRUCKS LIGHT DUTY VEHICLES ETHANOL...

433

General Light Metals  

Science Conference Proceedings (OSTI)

Mar 3, 2011 ... A detailed literature survey indicates that vacuum sintering is able to produce ... In recent years, there is a high demand for light-weight metals foams. ... Each powder mixture's composition is determined by response surface...

434

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys ...  

Science Conference Proceedings (OSTI)

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys Based on the ... Resources for the Selection and Use of Interatomic Potentials in Atomistic...

435

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

contractors supported the dismantlement including asbestos removal and concrete cutting, electrical, and HVAC. Project support functions were provided by GA organizations...

436

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots  

Science Conference Proceedings (OSTI)

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2012-04-15T23:59:59.000Z

437

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb  

DOE Green Energy (OSTI)

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

Dutta, P.S.; Ostrogorsky, A.G.; Gutmann, R.J.

1997-05-01T23:59:59.000Z

438

Practical image based lighting  

E-Print Network (OSTI)

In this thesis, we present a user-friendly and practical method for seamless integration of computer-generated images (CG) with real photographs and video. In general such seamless integration is extremely hard and requires recovery of real world information to simulate the same environment for both CG and real objects. This real world information includes camera positions and parameters, and shapes, material properties, and motion of real objects. Among these one of the most important real world information is lighting. Image based lighting that is developed to recover illumination information of the real world from photographs has recently been popular in computer graphics. In this thesis we present a practical image based lighting method. Our method is based on a simple and easily constructible device: a square plate with a cylindrical stick. We have developed a user-guided system to approximately recover illumination information (i.e. orientations, colors, and intensities of light sources) from a photograph of this device. Our approach also helps to recover surface colors of real objects based on reconstructed lighting information. In addition, we will address our observation on shadows with multi-color lights in a compositing aspect and will present a solution to handle the addressed issue.

Lee, Jaemin

2003-01-01T23:59:59.000Z

439

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

440

II4, Compositionally-Graded Layers Composed of Tandem InGaAs ...  

Science Conference Proceedings (OSTI)

The specification of the 6 miscut is important because it provides step ..... of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions.

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Commercial Lighting and LED Lighting Incentives (Vermont) | Open...  

Open Energy Info (EERE)

form History Share this page on Facebook icon Twitter icon Commercial Lighting and LED Lighting Incentives (Vermont) This is the approved revision of this page, as well as...

442

Solid-State Lighting: Residential Lighting End-Use Consumption  

NLE Websites -- All DOE Office Websites (Extended Search)

Lighting End-Use Consumption Study aims to improve the understanding of lighting energy usage in U.S. residential dwellings using a regional estimation framework. The...

443

Columbia Water & Light- HVAC and Lighting Efficiency Rebates  

Energy.gov (U.S. Department of Energy (DOE))

Columbia Water & Light (CWL) offers rebates to its commercial and industrial customers for the purchase of high efficiency HVAC installations and efficient lighting. Incentives for certain...

444

Solid-State Lighting: Solid-State Lighting  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Lighting Search Search Help Solid-State Lighting HOME ABOUT THE PROGRAM R&D PROJECTS MARKET-BASED PROGRAMS SSL BASICS INFORMATION RESOURCES FINANCIAL OPPORTUNITIES EERE...

445

Towards a poetics of light : the conceits of light.  

E-Print Network (OSTI)

??Towards a Poetics of Light; The Conceits of Light is a critical quest to map associations between rhetorical figures, psychological defences and spatial tropes in (more)

Evans, M

2006-01-01T23:59:59.000Z

446

Types of Lighting in Commercial Buildings - Lighting Characteristics  

U.S. Energy Information Administration (EIA) Indexed Site

U.S. Lighting Market Characterization, Vol. 1: National Lighting Inventory and Energy Consumption Estimate, Office of Energy Efficiency and Renewable Energy,...

447

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

448

LED Lighting | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

LED Lighting LED Lighting LED Lighting July 29, 2012 - 4:43pm Addthis LED Lighting What are the key facts? Quality LED products can last 25 times longer than an incandescent bulb and use 75% less energy. LEDs are directional, focusing light in ways that are useful in homes and commercial settings. The light-emitting diode (LED) is one of today's most energy-efficient and rapidly-developing lighting technologies. Quality LED light bulbs last longer, are more durable, and offer comparable or better light quality than other types of lighting. Check out the top 8 things about LEDs to learn more. Energy Savings LED is a highly energy efficient lighting technology, and has the potential to fundamentally change the future of lighting in the United States. Residential LEDs -- especially ENERGY STAR rated products -- use at least

449

Lighting Design | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Design Design Lighting Design July 29, 2012 - 6:28pm Addthis Energy-efficient indoor and outdoor lighting design focuses on ways to improve both the quality and efficiency of lighting. | Photo courtesy of ©iStockphoto.com/chandlerphoto. Energy-efficient indoor and outdoor lighting design focuses on ways to improve both the quality and efficiency of lighting. | Photo courtesy of ©iStockphoto.com/chandlerphoto. How does it work? Buy ENERGY STAR-rated lighting for the highest quality, energy-efficient lighting. Use timers and other controls to turn lights on and off. Use outdoor solar lighting. Energy-efficient indoor and outdoor lighting design focuses on ways to improve both the quality and efficiency of lighting. If you're constructing a new house, consider lighting as part of your whole-house design -- an

450

Low-Pressure Sodium Lighting  

Energy.gov (U.S. Department of Energy (DOE))

Low-pressure sodium lighting provides more energy-efficient outdoor lighting than high-intensity discharge lighting, but it has very poor color rendition. Typical applications include highway and...

451

Materials for solid state lighting  

E-Print Network (OSTI)

in the Proceedings. Materials for Solid State Lighting S.G.Johnson Lighting Research Group Building TechnologiesMaterials for Solid State Lighting S.G. Johnson 1 and J. A.

Johnson, S.G.; Simmons, J.A.

2002-01-01T23:59:59.000Z

452

Light as a Healing Mechanism  

E-Print Network (OSTI)

S. (1991). Meridians conduct light. Moskow: Raum and Zeit.the bodys absorption of light. Explore, 9(2), doi: https://01). The healing use of light and color. Health Care Design

Lingampalli, Nithya

2013-01-01T23:59:59.000Z

453

Photoluminescence from GaN Nanowires  

Science Conference Proceedings (OSTI)

... into commercial light emitting diodes and commercial laser diodes that operate from ultraviolet (UV) to green wavelengths. ... Phys 103, 124309 (2008 ...

2011-10-03T23:59:59.000Z

454

X=Bi, Sb, Al, Ga  

Science Conference Proceedings (OSTI)

... Nd-Fe-B Permanent Magnets Unique Exchange Bias Induced by Antiferromagnetic Cr-oxide ZnO-graphene Hybrid Quantum Dots Light Emitting Diode...

455

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor  

Science Conference Proceedings (OSTI)

Keywords: Ga vacancies, GaN growth, gas feeding method, optical property, rapid thermal chemical vapor deposition (RTCVD), yellow luminescence

Sun Jung Kim; Young Hun Seo; Kee Suk Nahm; Yun Bong Hahn; Hyun Wook Shim; Eun-Kyung Suh; Kee Young Lim; Hyung Jae Lee

1999-08-01T23:59:59.000Z

456

Light diffusing fiber optic chamber  

DOE Patents (OSTI)

A light diffusion system for transmitting light to a target area. The light is transmitted in a direction from a proximal end to a distal end by an optical fiber. A diffusing chamber is operatively connected to the optical fiber for transmitting the light from the proximal end to the distal end and transmitting said light to said target area. A plug is operatively connected to the diffusing chamber for increasing the light that is transmitted to the target area.

Maitland, Duncan J. (Lafayette, CA)

2002-01-01T23:59:59.000Z

457

Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop  

NLE Websites -- All DOE Office Websites (Extended Search)

Los Angeles, CA to someone Los Angeles, CA to someone by E-mail Share Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop Presentations and Materials-Los Angeles, CA on Facebook Tweet about Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop Presentations and Materials-Los Angeles, CA on Twitter Bookmark Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop Presentations and Materials-Los Angeles, CA on Google Bookmark Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop Presentations and Materials-Los Angeles, CA on Delicious Rank Solid-State Lighting: Municipal Consortium LED Street Lighting Workshop Presentations and Materials-Los Angeles, CA on Digg Find More places to share Solid-State Lighting: Municipal Consortium

458

Virginia Tech Electric Lighting Report  

NLE Websites -- All DOE Office Websites (Extended Search)

LIGHTING Daylight and Electric Careful consideration has been given to the integration of daylight, electric light, and the consequences relative to energy conservation, spatial...

459

Science Afternoon Properties of Light  

Science Conference Proceedings (OSTI)

... Science Afternoon. Properties of Light. ... We discovered that there was a lot to learn about the Properties of Light! Supplemental Materials. ...

2012-04-25T23:59:59.000Z

460

Physics Out Loud - Cerenkov Light  

NLE Websites -- All DOE Office Websites (Extended Search)

Baryon Previous Video (Baryon) Physics Out Loud Main Index Next Video (Cross Section) Cross Section Cerenkov Light The bright blue glow from nuclear reactors is Cerenkov light....

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Physics Out Loud - Cherenkov Light  

NLE Websites -- All DOE Office Websites (Extended Search)

Baryon Previous Video (Baryon) Physics Out Loud Main Index Next Video (Cross Section) Cross Section Cherenkov Light The bright blue glow from nuclear reactors is Cherenkov light....

462

Flash Lighting with Fluorescent Lamp.  

E-Print Network (OSTI)

??A flash lighting circuit with the fluorescent lamp is designed to produce lighting flicker by means of controlling the operating frequency and the duty-ratio of (more)

Hsieh, Horng

2005-01-01T23:59:59.000Z

463

Light pipe - design for efficiency  

Science Conference Proceedings (OSTI)

The high cost and availability of materials which are clear enough to transmit light without absorption has limited the idea of piping large-scale quantities of light. The light pipe uses the principle of Total Internal Reflection, with the light guided by very accurate prisms. The transmission of light directed into the end of a Light Pipe at an angle of less than 27.6 degrees is theoretically 100% efficient. The author describes its uses and advantages for lighting offices, cold storage areas, difficult access and hazardous areas, and for solar lighting. Future directions will be to improve the economics and accuracy of the technology. 4 references, 2 figures.

Hockey, S.N.

1985-08-01T23:59:59.000Z

464

Artificial light and plant growth  

NLE Websites -- All DOE Office Websites (Extended Search)

Artificial light and plant growth Name: Lim Age: NA Location: NA Country: NA Date: NA Question: What color of artificial light works the best in plant growth? Replies:...

465

Lighting Controls | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

fluorescent lighting fixtures rather than replace them. Dimmers and LEDs Some light-emitting diode (LED) lightbulbs can be used with dimmers. LED bulbs and fixtures must be...

466

HIGH-EFFICIENCY NITRIDE-BASED SOLID-STATE LIGHTING  

SciTech Connect

In this second annual report we summarize the progress in the second-year period of Department of Energy contract DE-FC26-01NT41203, entitled ''High- Efficiency Nitride-Based Solid-State Lighting''. The two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and Rensselaer Polytechnic Institute (led by Dr. N. Narendran), are pursuing the goals of this contract from thin film growth, characterization, and packaging standpoints. The UCSB team has recently made significant progress in the development of light-emitting diodes (LEDs) with AlGaN active regions emitting in the ultraviolet (UV), resonant-cavity LEDs (RCLEDs), as well as lateral epitaxial overgrowth (LEO) techniques to obtain large-area non-polar GaN films with low average dislocation density. The Rensselaer team has benchmarked the performance of commercially available LED systems and has also conducted efforts to develop an optimized RCLED packaging scheme, including development of advanced epoxy encapsulant chemistries.

Paul T. Fini; Shuji Nakamura

2003-10-30T23:59:59.000Z

467

Temperature-dependent excitonic absorption in long-period multiple In{sub x}Ga{sub 1-x}As/GaAs quantum well structures  

Science Conference Proceedings (OSTI)

Temperature variations in the fundamental absorption edge of long-period In{sub x}Ga{sub 1-x}As/GaAs structures are studied for samples with different numbers of quantum wells and similar periods. The quantum wells were close in composition and width. Experimental data are interpreted in the model of exciton-polariton light transfer involving localized excitons in confined structures with a finite number of quantum wells. The experimentally observed low-temperature anomaly of the integrated absorption coefficient is attributed to reemission of resonance localized excitons along a finite chain of quantum wells, with no excitonic transfer. The radiative decay time of an exciton in a single quantum well is estimated from the experimental data. It is demonstrated that, at low temperatures, the major contribution to the width of the experimentally observed absorption line corresponding to the ground heavy-hole exciton state is made by inhomogeneous broadening of the line by the field of potential fluctuations associated with the compositional disorder of the alloy. At low temperatures, the inhomogeneous broadening is much more pronounced than the broadening governed by the true radiative and nonradiative dissipative decay.

Vaganov, S. A., E-mail: sv.exciton@mail.ioffc.ru; Seisyan, R. P. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-01-15T23:59:59.000Z

468

Light Field Appearance Manifolds  

E-Print Network (OSTI)

Abstract. Statistical shape and texture appearance models are powerful image representations, but previously had been restricted to 2D or 3D shapes with smooth surfaces and lambertian reflectance. In this paper we present a novel 3D appearance model using image-based rendering techniques, which can represent complex lighting conditions, structures, and surfaces. We construct a light field manifold capturing the multi-view appearance of an object class and extend the direct search algorithm of Cootes and Taylor to match new light fields or 2D images of an object to a point on this manifold. When matching to a 2D image the reconstructed light field can be used to render unseen views of the object. Our technique differs from previous view-based active appearance models in that model coefficients between views are explicitly linked, and that we do not model any pose variation within the shape model at a single view. It overcomes the limitations of polygonal based appearance models and uses light fields that are acquired in real-time. 1

Chris Mario Christoudias; Trevor Darrell

2004-01-01T23:59:59.000Z

469

V7, Quantum Dot Light Emitting Devices and Exciton Recombination ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

470

Solar lighting | Open Energy Information  

Open Energy Info (EERE)

lighting lighting Jump to: navigation, search Introductory Facts About Solar Lights It is not just a normal light bulb.The solar light consists of a LED or Light Emitting Diode, which draw little power. Coupled with constantly recharging batteries, you will never run out of light! They will save the customer money. By Replacing all outdoor lighting with solar lights there is no need to plug in to the electrical system. The lights will automatically turn on at dusk and will be charged during the day. They help out the environment.Not only does not plugging in to the power system save money but also energy, therefore protecting the Earth. Easy to Install No wires necessary, just pop in the battery. They come in all designs Just because they are solar lights doesn't

471

Lighting and Surfaces 11.1 Introduction to Lighting  

E-Print Network (OSTI)

-object-at-a-time. "Intrinsic" light is the light emitted by the object itself, such as the glow from a TV screen, a light-emitting diode, or a star. "Ambient" light is an illumination that seems to come from all sides. In the real

Boyd, John P.

472

Spin injection into semiconductors : the role of Fe/Al[sub x]Ga[sub 1-x]As interface  

SciTech Connect

The influence of the growth and post-growth annealing temperatures of Fe/Al{sub x}Ga{sub 1-x}As-based spin light-emitting diodes (LEDs) on the spin injection efficiency is discussed. The extent of interfacial reactions during molecular beam epitaxial growth of Fe on GaAs was determined from in-situ x-ray photoelectron spectroscopy studies. The Fe/GaAs interface results in {<=} 3 monolayers of reaction for Fe grown at -15 C. Intermediate growth temperatures (95 C) lead to {approx}5 monolayers of interfacial reactions, and high growth temperatures of 175 C lead to a {approx}9 monolayer thick reacted layer. Polarized neutron reflectivity was used to determine the interfacial magnetic properties of epitaxial Fe{sub 0.5}Co{sub 0.5}/GaAs heterostructures grown under identical conditions. No interfacial magnetic dead layer is detected at the interface for Fe{sub 0.5}Co{sub 0.5} films grown at -15 C, an {approx}6 {angstrom} thick nonmagnetic layer formed at the interface for 95 C growth and an {approx}5 {angstrom} thick magnetic interfacial reacted layer formed for growth at 175 C. Spin injection from Fe contacts into spin LEDs decreases sharply when reactions result in a nonmagnetic interfacial layer. Significant spin injection signals are obtained from Fe contacts grown between -5 C and 175 C, although the higher Fe growth temperatures resulted in a change in the sign of the spin polarization. Post-growth annealing of the spin LEDs is found to increase spin injection efficiency for low Fe growth temperatures and to a sign reversal of the spin polarization for high growth temperature (175 C). An effective Schottky barrier height increase indicates that post growth annealing modifies the Fe/Al{sub x}Ga{sub 1-x}As interface.

Fitzsimmons, M. R. (Michael R.); Park, S. (Sungkyun)

2004-01-01T23:59:59.000Z

473

TOPIC Brief BUILDING TECHNOLOGIES PROGRAM Lighting: Residential...  

NLE Websites -- All DOE Office Websites (Extended Search)

Lighting: Residential and Commercial Requirements TOPIC BRIEF 1 Lighting: Residential and Commercial Requirements Residential Lighting Requirements The 2009 International Energy...

474

July 18, 2012 Using QECBs for Street Lighting Upgrades  

E-Print Network (OSTI)

lighting technologies (e.g. light-emitting diodes, induction lighting) can reduce street light energy

475

National Synchrotron Light Source  

NLE Websites -- All DOE Office Websites (Extended Search)

Environmental Assessment Environmental Assessment Proposed Upgrade and Improvement of the National Synchrotron Light Source Complex at Brookhaven National Laboratory, Upton, New York This Environmental Assessment addresses the proposed action by the U.S. Department of Energy to upgrade the facilities of the National Synchrotron Light Source Complex, namely the National Synchrotron Light Source (NSLS), the Accelerator Test Facility and the Source Development Laboratory. The environmental effects of a No-Action Alternative as well as a Proposed Action are evaluated in the Environmental Assessment. The “NSLS Environmental Assessment Fact Sheet” link below leads to a one-page summary of the Environmental Assessment. The “NSLS Environmental Assessment” link below leads to the whole 41-page

476

Lighting Technology Panel  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Technology Panel Technology Panel Federal Utility Partnership Working Group N b 2009 November 1 1 8, 2009 Doug Avery Southern California Edison Southern California Edison National Energy Conservation M d t Mandates * There are Federal and State Mandates to reduce energy consumption - California Investor Owned Electric Utilities are ordered to save around 3 Billion kWh's each y year from 2007-2113 - Federal buildings ordered to reduce electrical Federal buildings ordered to reduce electrical energy consumption 35% by 2012 Energy Consump ption gy Lighting accounts for 42 7% of energy consumption Lighting accounts for 42.7% of energy consumption Data Courtesy of SDG&E Data Courtesy of SDG&E Energy Consump ption gy More than ¾ of the lighting load is non-residential. Data Courtesy of SDG&E

477

Pupillary efficient lighting system  

DOE Patents (OSTI)

A lighting system having at least two independent lighting subsystems each with a different ratio of scotopic illumination to photopic illumination. The radiant energy in the visible region of the spectrum of the lighting subsystems can be adjusted relative to each other so that the total scotopic illumination of the combined system and the total photopic illumination of the combined system can be varied independently. The dilation or contraction of the pupil of an eye is controlled by the level of scotopic illumination and because the scotopic and photopic illumination can be separately controlled, the system allows the pupil size to be varied independently of the level of photopic illumination. Hence, the vision process can be improved for a given level of photopic illumination. 5 figs.

Berman, S.M.; Jewett, D.L.

1989-04-14T23:59:59.000Z

478

Light harvesting arrays  

DOE Patents (OSTI)

A light harvesting array useful for the manufacture of devices such as solar cells comprises: (a) a first substrate comprising a first electrode; and (b) a layer of light harvesting rods electrically coupled to the first electrode, each of the light harvesting rods comprising a polymer of Formula I: X.sup.1.paren open-st.X.sup.m+1).sub.m (I) wherein m is at least 1, and may be from two, three or four to 20 or more; X.sup.1 is a charge separation group (and preferably a porphyrinic macrocycle, which may be one ligand of a double-decker sandwich compound) having an excited-state of energy equal to or lower than that of X.sup.2, and X.sup.2 through X.sup.m+1 are chromophores (and again are preferably porphyrinic macrocycles).

Lindsey, Jonathan S. (Raleigh, NC)

2002-01-01T23:59:59.000Z

479

Pupillary efficient lighting system  

DOE Patents (OSTI)

A lighting system having at least two independent lighting subsystems each with a different ratio of scotopic illumination to photopic illumination. The radiant energy in the visible region of the spectrum of the lighting subsystems can be adjusted relative to each other so that the total scotopic illumination of the combined system and the total photopic illumination of the combined system can be varied independently. The dilation or contraction of the pupil of an eye is controlled by the level of scotopic illumination and because the scotopic and photopic illumination can be separately controlled, the system allows the pupil size to be varied independently of the level of photopic illumination. Hence, the vision process can be improved for a given level of photopic illumination.

Berman, Samuel M. (San Francisco, CA); Jewett, Don L. (Mill Valley, CA)

1991-01-01T23:59:59.000Z

480

Heavy-to-light form factors on the light cone  

E-Print Network (OSTI)

The light cone method provides a convenient non-perturbative tool to study the heavy-to-light form factors. We construct a light cone quark model utilizing the soft collinear effective theory. In the leading order of effective theory, the ten $B$ to light physical form factors are reduced to three universal form factors which can be calculated as overlaps of hadron light front wave functions in the light cone quark model. The numerical results show that the leading contribution is close to the results from other approaches. The $q^2$ dependence of the heavy-to-light form factors are also presented.

Cai-Dian Lu; Wei Wang; Zheng-Tao Wei

2007-01-31T23:59:59.000Z

Note: This page contains sample records for the topic "light comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Deficiencies of Lighting Codes and Ordinances in Controlling Light Pollution from Parking Lot Lighting Installations.  

E-Print Network (OSTI)

??The purpose of this research was to identify the main causes of light pollution from parking lot electric lighting installations and highlight the deficiencies of (more)

Royal, Emily

2012-01-01T23:59:59.000Z

482

Wisconsin Business Sheds Light on Lighting | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Wisconsin Business Sheds Light on Lighting Wisconsin Business Sheds Light on Lighting Wisconsin Business Sheds Light on Lighting April 29, 2010 - 4:59pm Addthis When this photograph was taken, the upper floors of Wisconsin’s Department of Transportation were using a new lighting plan from EPS, while the lower ones were still using the pre-audit lighting scheme. | Photo Courtesy of Energy Performance Specialists, LLC When this photograph was taken, the upper floors of Wisconsin's Department of Transportation were using a new lighting plan from EPS, while the lower ones were still using the pre-audit lighting scheme. | Photo Courtesy of Energy Performance Specialists, LLC Joshua DeLung Wisconsin-based Energy Performance Specialists LLC is helping clients reduce energy consumption in a very simple way-by just using less.

483

Radioluminescent lighting technology  

SciTech Connect

The glow-in-the-dark stereotype that characterizes the popular image of nuclear materials is not accidental. When the French scientist, Henri Becquerel, first discovered radioactivity in 1896, he was interested in luminescence. Radioluminescence, the production of light from a mixture of energetic and passive materials, is probably the oldest practical application of the unstable nucleus. Tritium-based radioluminescent lighting, in spite of the biologically favorable character of the gaseous tritium isotope, was included in the general tightening of environmental and safety regulations. Tritium light manufacturers would have to meet two fundamental conditions: (1) The benefit clearly outweighed the risk, to the extent that even the perceived risk of a skeptical public would be overcome. (2) The need was significant enough that the customer/user would be willing and able to afford the cost of regulation that was imposed both in the manufacture, use and eventual disposal of nuclear materials. In 1981, researchers at Oak Ridge National Laboratory were investigating larger radioluminescent applications using byproduct nuclear material such as krypton-85, as well as tritium. By 1982, it appeared that large source, (100 Curies or more) tritium gas tube, lights might be useful for marking runways and drop zones for military operations and perhaps even special civilian aviation applications. The successful development of this idea depended on making the light bright enough and demonstrating that large gas tube sources could be used and maintained safely in the environment. This successful DOE program is now in the process of being completed and closed-out. Working closely with the tritium light industry, State governments and other Federal agencies, the basic program goals have been achieved. This is a detailed report of what they have learned, proven, and discovered. 91 refs., 29 figs., 5 tabs. (JF)

1990-01-01T23:59:59.000Z

484

Bonding and gap states at GaAs-oxide interfaces  

Science Conference Proceedings (OSTI)

The nature of bonding and possible causes of Fermi level pinning at high mobility-high dielectric constant oxide GaAs:HfO"2 interfaces are discussed. It is argued that these are atoms with defective bonding, rather than states due to the bulk semiconductor ... Keywords: GaAs, bonding, interface

John Robertson; Liang Lin

2011-04-01T23:59:59.000Z

485

Final LDRD report : design and fabrication of advanced device structures for ultra high efficiency solid state lighting.  

SciTech Connect

The goal of this one year LDRD was to improve the overall efficiency of InGaN LEDs by improving the extraction of light from the semiconductor chip. InGaN LEDs are currently the most promising technology for producing high efficiency blue and green semiconductor light emitters. Improving the efficiency of InGaN LEDs will enable a more rapid adoption of semiconductor based lighting. In this LDRD, we proposed to develop photonic structures to improve light extraction from nitride-based light emitting diodes (LEDs). While many advanced device geometries were considered for this work, we focused on the use of a photonic crystal for improved light extraction. Although resonant cavity LEDs and other advanced structures certainly have the potential to improve light extraction, the photonic crystal approach showed the most promise in the early stages of this short program. The photonic crystal (PX)-LED developed here incorporates a two dimensional photonic crystal, or photonic lattice, into a nitride-based LED. The dimensions of the photonic crystal are selected such that there are very few or no optical modes in the plane of the LED ('lateral' modes). This will reduce or eliminate any radiation in the lateral direction so that the majority of the LED radiation will be in vertical modes that escape the semiconductor, which will improve the light-extraction efficiency. PX-LEDs were fabricated using a range of hole diameters and lattice constants and compared to control LEDs without a photonic crystal. The far field patterns from the PX-LEDs were dramatically modified by the presence of the photonic crystal. An increase in LED brightness of 1.75X was observed for light measured into a 40 degree emission cone with a total increase in power of 1.5X for an unencapsulated LED.

Koleske, Daniel David; Bogart, Katherine Huderle Andersen; Shul, Randy John; Wendt, Joel Robert; Crawford, Mary Hagerott; Allerman, Andrew Alan; Fischer, Arthur Joseph

2005-04-01T23:59:59.000Z

486

Fiberoptic home lighting  

Science Conference Proceedings (OSTI)

Initial effort on this grant project was to construct a model that would demonstrate the feasibility of various lighting theories. Testing of suitable materials for utilization as fibreoptic components was the second priority. The material chosen for the project was 5/8 inch diameter plexiglas rod. The next step involved determining the limitations and other properties of the plexiglas rod. The final factor in developing a useable system involved testing different types and colors of light and their ability to be transmitted by the optic fibre. The culmination of the research and testing resulted in the demonstration projects.

Keleher, D.

1982-01-01T23:59:59.000Z

487

Energy 101: Lighting Choices | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Lighting Choices Energy 101: Lighting Choices Addthis Below is the text version for the Energy 101: Lighting Choices video: The video opens with "Energy 101: Lighting Choices."...

488

Lighting Principles and Terms | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

Principles and Terms Lighting Principles and Terms July 29, 2012 - 5:20pm Addthis Light quantity, energy consumption, and light quality are the basic principles of lighting. |...

489

Solid-State Lighting: OLED Basics  

NLE Websites -- All DOE Office Websites (Extended Search)

Lighting: OLED Basics on Twitter Bookmark Solid-State Lighting: OLED Basics on Google Bookmark Solid-State Lighting: OLED Basics on Delicious Rank Solid-State Lighting:...

490

Light Logger Placement Guidelines for Residential Lighting Studies  

Science Conference Proceedings (OSTI)

New technological advancements in lighting have increased the efficiency of residential lighting loads. Light loggers, which use a photocell to sense when lights are on or off, provide valuable metering information for use in measuring technology effectiveness and designing marketing programs. Placement of the loggers is critical to the accuracy and reliability of the measurements. This report provides placement recommendations for various types of lighting, expected accuracy compared to metered energy, ...

1996-03-28T23:59:59.000Z

491

Elastic properties of Pu metal and Pu-Ga alloys  

Science Conference Proceedings (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

492

LIGHT SCATTERING STUDIES OF SOLIDS AND ATOMIC VAPORS  

E-Print Network (OSTI)

appropriate and the dispersion of RRS in GaS Se, is indeedGaS Se^ crystals. We will see there x 1-x that the dispersion

Chiang, Tai-Chang

2011-01-01T23:59:59.000Z

493

Good lighting with energy conservation  

SciTech Connect

The publicity and economic impact of the oil embargo of 1973-74 has frequently caused over-reactive, indiscriminate reductions in lighting without eliminating many of the truly energy-wasteful aspects of lighting system usage. With current technology and a clear knowledge of the lighting requirements significant contributions to energy conservation can be achieved without unnecessarily sacrificing the benefits of good lighting.

Clark, G.W.

1976-01-01T23:59:59.000Z

494

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells  

E-Print Network (OSTI)

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells J. Schörmann,a S and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted wells clear reflection high energy electron diffraction oscillations were observed indicating a two

As, Donat Josef

495

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

496

Another Side of Light - D  

NLE Websites -- All DOE Office Websites (Extended Search)

D. Three quantum phenomena D. Three quantum phenomena In fluorescence, matter absorbs light waves of a high frequency and then emits light of the same or lower frequency. This process was studied and named by George Gabriel Stokes in the mid-19th century. Today, fluorescence is familiar to us from fluorescent light bulbs. A fluorescent bulb's filament produces ultraviolet light, which is absorbed by the bulb's inner coating, which then emits lower-frequency visible light-more visible light than an incandescent bulb produces with the same wattage. According to the hypothesis of light quanta, during fluorescence an atom absorbs a quantum of light whose energy is proportional to the light wave's frequency. If the atom doesn't supply any extra energy of its own, the light quantum emitted should either have the same energy or less energy

497

Tips: Lighting | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Lighting Lighting Tips: Lighting May 4, 2012 - 3:16pm Addthis Lighting Choices Save You Money. Energy-efficient light bulbs are available in a wide variety of sizes and shapes. Lighting Choices Save You Money. Energy-efficient light bulbs are available in a wide variety of sizes and shapes. What does this mean for me? Replacing 15 inefficient incandescent bulbs in your home with energy-saving bulbs could save you about $50 per year. For the greatest savings, replace your old incandescent bulbs with ENERGY STAR-qualified bulbs. An average household dedicates about 10% of its energy budget to lighting. Switching to energy-efficient lighting is one of the fastest ways to cut your energy bills. Timers and motion sensors save you even more money by reducing the amount of time lights are on but not being used.

498

Technology reviews: Lighting systems  

SciTech Connect

We present a representative review of existing, emerging, and future technology options in each of five hardware and systems areas in envelope and lighting technologies: lighting systems, glazing systems, shading systems, daylighting optical systems, and dynamic curtain wall systems. The term technology is used here to describe any design choice for energy efficiency, ranging from individual components to more complex systems to general design strategies. The purpose of this task is to characterize lighting system in the state of the art in envelope and lighting technologies in order to identify those with promise for advanced integrated systems, with an emphasis on California commercial buildings. For each technology category, the following activities have been attempted to the extent possible: Identify key performance characteristics and criteria for each technology. Determine the performance range of available technologies. Identify the most promising technologies and promising trends in technology advances. Examine market forces and market trends. Develop a continuously growing in-house database to be used throughout the project. A variety of information sources have been used in these technology chara