National Library of Energy BETA

Sample records for layered bispectral threshold

  1. ARM - VAP Process - lbtm-minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    : Layered Bispectral Threshold Method (LBTM) cloud products derived from GMS-5,Darwin lbtm3minnisman : Layered Bispectral Threshold Method (LBTM) cloud products derived...

  2. Transport-driven scrape-off layer flows and the x-point dependence of the L-H power threshold in Alcator C-Mod

    SciTech Connect (OSTI)

    LaBombard, B.; Rice, J.E.; Hubbard, A.E.; Hughes, J.W.; Greenwald, M.; Granetz, R.S.; Irby, J.H.; Lin, Y.; Lipschultz, B.; Marmar, E.S.; Marr, K.; Mossessian, D.; Parker, R.; Rowan, W.; Smick, N.; Snipes, J.A.; Terry, J.L.; Wolfe, S.M.; Wukitch, S.J.

    2005-05-15

    Factor of {approx}2 higher power thresholds for low- to high-confinement mode transitions (L-H) with unfavorable x-point topologies in Alcator C-Mod [Phys. Plasmas 1, 1511 (1994)] are linked to flow boundary conditions imposed by the scrape-off layer (SOL). Ballooning-like transport drives flow along magnetic field lines from low- to high-field regions with toroidal direction dependent on upper/lower x-point balance; the toroidal rotation of the confined plasma responds, exhibiting a strong counter-current rotation when Bx{nabla}B points away from the x point. Increased auxiliary heating power (rf, no momentum input) leads to an L-H transition at approximately twice the edge electron pressure gradient when Bx{nabla}B points away. As gradients rise prior to the transition, toroidal rotation ramps toward the co-current direction; the H mode is seen when the counter-current rotation imposed by the SOL flow becomes compensated. Remarkably, L-H thresholds in lower-limited discharges are identical to lower x-point discharges; SOL flows are also found similar, suggesting a connection.

  3. Adaptive Thresholds

    Energy Science and Technology Software Center (OSTI)

    2014-08-26

    ADAPT is a topological analysis code that allow to compute local threshold, in particular relevance based thresholds for features defined in scalar fields. The initial target application is vortex detection but the software is more generally applicable to all threshold based feature definitions.

  4. FAR Dollar Threshold Changes

    Broader source: Energy.gov [DOE]

    Attached is a table summarizing the new FAR dollar thresholds. These thresholds became effective on October 1, 2010.

  5. Current-induced electrical self-oscillations across out-of-plane threshold switches based on VO{sub 2} layers integrated in crossbars geometry

    SciTech Connect (OSTI)

    Beaumont, A.; Leroy, J.; Crunteanu, A.

    2014-04-21

    Electrically activated metal-insulator transition (MIT) in vanadium dioxide (VO{sub 2}) is widely studied from both fundamental and practical points of view. It can give valuable insights on the currently controversial phase transition mechanism in this material and, at the same time, allows the development of original MIT-based electronic devices. Electrically triggered insulator-metal transitions are demonstrated in novel out-of-plane, metal-oxide-metal type devices integrating a VO{sub 2} thin film, upon applying moderate threshold voltages. It is shown that the current-voltage characteristics of such devices present clear negative differential resistance effects supporting the onset of continuous, current-driven phase oscillations across the vanadium dioxide material. The frequencies of these self-sustained oscillations are ranging from 90 to 300 kHz and they may be tuned by adjusting the injected current. A phenomenological model of the device and its command circuit is developed, and allows to extract the analytical expressions of the oscillation frequencies and to simulate the electrical oscillatory phenomena developed across the VO{sub 2} material. Such out-of-plane devices may further contribute to the general understanding of the driving mechanism in metal-insulator transition materials and devices, a prerequisite to promising applications in high speed/high frequency networks of oscillatory or resistive memories circuits.

  6. Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

    SciTech Connect (OSTI)

    Zhou, Xin; Qiao, Ming; He, Yitao; Li, Zhaoji; Zhang, Bo

    2015-11-16

    Hot-carrier-induced linear drain current (I{sub dlin}) and threshold voltage (V{sub th}) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the V{sub th} increasing and the channel conductance (G{sub ch}) decreasing, then reduces I{sub dlin}. In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (G{sub d}), and then increases I{sub dlin}. Consequently, the eventual I{sub dlin} degradation is controlled by the competition of the two mechanisms due to conductance modulation in the both regions. Based on the model, it is explained that the measured I{sub dlin} anomalously increases while the V{sub th} is increasing with power law. The thin layer field pLDMOS exhibits more severe V{sub th} instability compared with thick SOI layer structure; as a result, it should be seriously evaluated in actual application in switching circuit.

  7. ARM - Publications: Science Team Meeting Documents

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GOES-8 cloud and radiative properties data set. The ARM GOES-8 data set is derived using the Layered Bispectral Threshold Method (LBTM, see Khaiyer et al., 2001 this conference). ...

  8. ARM - VAP Product - lbtm3minnisdar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    below or call us at 1-888-ARM-DATA. Send VAP Output : LBTM3MINNISDAR Layered Bispectral Threshold Method (LBTM) cloud products derived from GMS-5,Darwin Active Dates 2002.04.01...

  9. Threshold Reflectivity Zc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The black and red colors represent those for 0.33 (q 3) and 1(q 1), respectively. The dependency exhibits two distinct regimes: threshold function ...

  10. Hydrogen Threshold Cost Calculation

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Program Record (Offices of Fuel Cell Technologies) Record #: 11007 Date: March 25, 2011 Title: Hydrogen Threshold Cost Calculation Originator: Mark Ruth & Fred Joseck Approved by: Sunita Satyapal Date: March 24, 2011 Description: The hydrogen threshold cost is defined as the hydrogen cost in the range of $2.00-$4.00/gge (2007$) which represents the cost at which hydrogen fuel cell electric vehicles (FCEVs) are projected to become competitive on a cost per mile basis with the competing

  11. Threshold electron excitation of Na

    SciTech Connect (OSTI)

    Marinkovic, B.; Wang, P.; Gallagher, A. )

    1992-09-01

    Electron collisional excitation of the 4{ital D}, 5{ital D}, 4{ital P}, and 6{ital S} states of Na has been measured with about 30-meV energy resolution. Very rapid, unresolved threshold onsets are seen for all but the 4{ital P} state, and a near-threshold resonance is suggested by the 5{ital D} data. However, only weak undulations in the cross sections are observed above threshold.

  12. Probabilistic Threshold Criterion

    SciTech Connect (OSTI)

    Gresshoff, M; Hrousis, C A

    2010-03-09

    The Probabilistic Shock Threshold Criterion (PSTC) Project at LLNL develops phenomenological criteria for estimating safety or performance margin on high explosive (HE) initiation in the shock initiation regime, creating tools for safety assessment and design of initiation systems and HE trains in general. Until recently, there has been little foundation for probabilistic assessment of HE initiation scenarios. This work attempts to use probabilistic information that is available from both historic and ongoing tests to develop a basis for such assessment. Current PSTC approaches start with the functional form of the James Initiation Criterion as a backbone, and generalize to include varying areas of initiation and provide a probabilistic response based on test data for 1.8 g/cc (Ultrafine) 1,3,5-triamino-2,4,6-trinitrobenzene (TATB) and LX-17 (92.5% TATB, 7.5% Kel-F 800 binder). Application of the PSTC methodology is presented investigating the safety and performance of a flying plate detonator and the margin of an Ultrafine TATB booster initiating LX-17.

  13. Hydrogen Threshold Cost Calculation | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Threshold Cost Calculation Hydrogen Threshold Cost Calculation DOE Hydrogen Program Record number11007, Hydrogen Threshold Cost Calculation, documents the methodology and assumptions used to calculate that threshold cost. 11007_h2_threshold_costs.pdf (443.22 KB) More Documents & Publications DOE Hydrogen and Fuel Cells Program Record 11007: Hydrogen Threshold Cost Calculation Fuel Cell Technologies Program Overview: 2010 Annual Merit Review and Peer Evaluation Meeting Fuel Cell Technologies

  14. GC GUIDANCE ON MINOR CONSTRUCTION THRESHOLDS

    Energy Savers [EERE]

    GUIDANCE ON MINOR CONSTRUCTION THRESHOLDS We have been asked about how the Department implements what is known as the "minor construction threshold," which limits the amount of ...

  15. Threshold 21 Model | Open Energy Information

    Open Energy Info (EERE)

    Moderate Website: www.millennium-institute.orgintegratedplanningtoolsT21 Cost: Free Threshold 21 Model Screenshot References: Threshold 21 Model1 Related Tools Energy...

  16. Method for depositing layers of high quality semiconductor material

    DOE Patents [OSTI]

    Guha, Subhendu; Yang, Chi C.

    2001-08-14

    Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.

  17. Damage thresholds of thin film materials and high reflectors at 248 nm

    SciTech Connect (OSTI)

    Rainer, F.; Lowdermilk, W.H.; Milam, D.; Carniglia, C.K.; Hart, T.T.; Lichtenstein, T.L.

    1982-01-01

    Twenty-ns, 248-nm KrF laser pulses were used to measure laser damage thresholds for halfwave-thick layers of 15 oxide and fluoride coating materials, and for high reflectance coatings made with 13 combinations of these materials. The damage thresholds of the reflectors and single-layer films were compared to measurements of several properties of the halfwave-thick films to determine whether measurements of these properties of single-layer films to determine whether measurements of these properties of single-layer films were useful for identifying materials for fabrication of damage resistant coatings.

  18. ARM - VAP Product - lbtm3minnisman

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    minnisman Documentation lbtm-minnis : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : LBTM3MINNISMAN Layered Bispectral Threshold Method (LBTM) cloud products derived from GMS-5,Manus

  19. ARM - VAP Product - lbtm3minnisnau

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    minnisnau Documentation lbtm-minnis : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : LBTM3MINNISNAU Layered Bispectral Threshold Method (LBTM) cloud products derived from GMS-5,Nauru

  20. Compositional threshold for Nuclear Waste Glass Durability

    SciTech Connect (OSTI)

    Kruger, Albert A.; Farooqi, Rahmatullah; Hrma, Pavel R.

    2013-04-24

    Within the composition space of glasses, a distinct threshold appears to exist that separates "good" glasses, i.e., those which are sufficiently durable, from "bad" glasses of a low durability. The objective of our research is to clarify the origin of this threshold by exploring the relationship between glass composition, glass structure and chemical durability around the threshold region.

  1. DOE Hydrogen and Fuel Cells Program Record 11007: Hydrogen Threshold...

    Office of Environmental Management (EM)

    1007: Hydrogen Threshold Cost Calculation DOE Hydrogen and Fuel Cells Program Record 11007: Hydrogen Threshold Cost Calculation The hydrogen threshold cost is defined as the ...

  2. Acquisition Guide Chapter Updates for Threshold Changes

    Broader source: Energy.gov [DOE]

    The Federal Acquisition Regulation is regularly updated to revise dollar thresholds associated for various activities. Policy Flash 2011-15 provides a quick reference guide to the threshold changes that were effective October 1, 2010. This Flash is to inform you that the following Guide Chapters have been updated to reflect the threshold changes: Chapter 3.1 Chapter 6.1 Chapter 15.4-4 Chapter 16.1 Chapter 18.0 Chapter 37.1 Chapter 38.1

  3. DOE Contractor Work Force Restructuring Approval Thresholds

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Contractor Work Force Restructuring Approval Thresholds Up to 100 employees Contractor can ... to provide approval for NNSA work force restructurings in consultation with LM 501 ...

  4. CABLE TECHNOLOGY LABORATORIES, INC. DETERMINATION OF THRESHOLD...

    Office of Scientific and Technical Information (OSTI)

    CABLE TECHNOLOGY LABORATORIES, INC. DETERMINATION OF THRESHOLD AND MAXIMUM OPERATING ELECTRIC STRESSES FOR SELECTED HIGH VOLTAGE INSULATIONS Investigation of Aged Polymeric ...

  5. CABLE TECHNOLOGY LABORATORIES, INC. DETERMINATION OF THRESHOLD...

    Office of Scientific and Technical Information (OSTI)

    Cable TABLE OF CONTENTS ABSTRACT INTRODUCTION DESCRIPTION OF TEST CABLES TEMPERATURE CONDITIONING OF TEST CABLES TESTING OF XLPE INSULATED CABLE BEFORE AGING Threshold ...

  6. New photodisintegration threshold observable in

    SciTech Connect (OSTI)

    E.A. Wulf; R.S. Canon; Sally J. Gaff; J.H. Kelley; R.M. Prior; E.C. Schreiber; M. Spraker; D.R. Tilley; H.R. Weller; M. Viviani; A. Kievsky; S. Rosati; Rocco Schiavilla

    2000-02-01

    Measurements of the cross section, vector, and tensor analyzing powers, and linear gamma-ray polarization in the radiative capture reactions D(p,y){sup 3} He and p(d,y){sup 3}He at c.m. energies in the range 0-53 keV allow the determination of the reduced matrix elements (RMEs) relevant for these transitions. From these RMEs the value of the integral which determines the Gerasimov-Drell-Hearn sum rule for He is obtained in the threshold region, corresponding to two-body breakup, and compared with the results of an ab initio microscopic three-body model calculation.The theoretical predictions for the value of this integral based on a ''nucleons-only'' assumption are an order of magnitude smaller than experiment. The discrepancy is reduced to about a factor of 2 when two-body currents are taken into account. This factor of 2 is due to an almost exact cancellation between the dominant E1 RMEs in the theoretical calculation. The excess E1 strength observed experimentally could provide useful insights into the nuclear interaction at low energies.

  7. Methods for automatic trigger threshold adjustment

    DOE Patents [OSTI]

    Welch, Benjamin J; Partridge, Michael E

    2014-03-18

    Methods are presented for adjusting trigger threshold values to compensate for drift in the quiescent level of a signal monitored for initiating a data recording event, thereby avoiding false triggering conditions. Initial threshold values are periodically adjusted by re-measuring the quiescent signal level, and adjusting the threshold values by an offset computation based upon the measured quiescent signal level drift. Re-computation of the trigger threshold values can be implemented on time based or counter based criteria. Additionally, a qualification width counter can be utilized to implement a requirement that a trigger threshold criterion be met a given number of times prior to initiating a data recording event, further reducing the possibility of a false triggering situation.

  8. Initiation Pressure Thresholds from Three Sources

    SciTech Connect (OSTI)

    Souers, P C; Vitello, P

    2007-02-28

    Pressure thresholds are minimum pressures needed to start explosive initiation that ends in detonation. We obtain pressure thresholds from three sources. Run-to-detonation times are the poorest source but the fitting of a function gives rough results. Flyer-induced initiation gives the best results because the initial conditions are the best known. However, very thick flyers are needed to give the lowest, asymptotic pressure thresholds used in modern models and this kind of data is rarely available. Gap test data is in much larger supply but the various test sizes and materials are confusing. We find that explosive pressures are almost the same if the distance in the gap test spacers are in units of donor explosive radius. Calculated half-width time pulses in the spacers may be used to create a pressure-time curve similar to that of the flyers. The very-large Eglin gap tests give asymptotic thresholds comparable to extrapolated flyer results. The three sources are assembled into a much-expanded set of near-asymptotic pressure thresholds. These thresholds vary greatly with density: for TATB/LX-17/PBX 9502, we find values of 4.9 and 8.7 GPa at 1.80 and 1.90 g/cm{sup 3}, respectively.

  9. Effects of pulse duration on magnetostimulation thresholds

    SciTech Connect (OSTI)

    Saritas, Emine U.; Goodwill, Patrick W.; Conolly, Steven M.

    2015-06-15

    Purpose: Medical imaging techniques such as magnetic resonance imaging and magnetic particle imaging (MPI) utilize time-varying magnetic fields that are subject to magnetostimulation limits, which often limit the speed of the imaging process. Various human-subject experiments have studied the amplitude and frequency dependence of these thresholds for gradient or homogeneous magnetic fields. Another contributing factor was shown to be number of cycles in a magnetic pulse, where the thresholds decreased with longer pulses. The latter result was demonstrated on two subjects only, at a single frequency of 1.27 kHz. Hence, whether the observed effect was due to the number of cycles or due to the pulse duration was not specified. In addition, a gradient-type field was utilized; hence, whether the same phenomenon applies to homogeneous magnetic fields remained unknown. Here, the authors investigate the pulse duration dependence of magnetostimulation limits for a 20-fold range of frequencies using homogeneous magnetic fields, such as the ones used for the drive field in MPI. Methods: Magnetostimulation thresholds were measured in the arms of six healthy subjects (age: 27 ± 5 yr). Each experiment comprised testing the thresholds at eight different pulse durations between 2 and 125 ms at a single frequency, which took approximately 30–40 min/subject. A total of 34 experiments were performed at three different frequencies: 1.2, 5.7, and 25.5 kHz. A solenoid coil providing homogeneous magnetic field was used to induce stimulation, and the field amplitude was measured in real time. A pre-emphasis based pulse shaping method was employed to accurately control the pulse durations. Subjects reported stimulation via a mouse click whenever they felt a twitching/tingling sensation. A sigmoid function was fitted to the subject responses to find the threshold at a specific frequency and duration, and the whole procedure was repeated at all relevant frequencies and pulse durations

  10. Methods for threshold determination in multiplexed assays

    DOE Patents [OSTI]

    Tammero, Lance F. Bentley; Dzenitis, John M; Hindson, Benjamin J

    2014-06-24

    Methods for determination of threshold values of signatures comprised in an assay are described. Each signature enables detection of a target. The methods determine a probability density function of negative samples and a corresponding false positive rate curve. A false positive criterion is established and a threshold for that signature is determined as a point at which the false positive rate curve intersects the false positive criterion. A method for quantitative analysis and interpretation of assay results together with a method for determination of a desired limit of detection of a signature in an assay are also described.

  11. Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices

    SciTech Connect (OSTI)

    Wang, Yuhan; Comes, Ryan B.; Wolf, Stuart A.; Lu, Jiwei

    2015-11-25

    Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of this device as an electronic switch.

  12. DOE Contractor Work Force Restructuring Approval Thresholds

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Contractor Work Force Restructuring Approval Thresholds Up to 100 employees Contractor can make decision bit must notify DOE of intent of restructuring 101-200 employees DOE/NNSA field office is authorized to provide approval 201-500 employees LM is authorized to provide approval and NNSA Administrator is authorized to provide approval for NNSA work force restructurings in consultation with LM 501 and above employees Under Secretary/NNSA Administrator approval required

  13. Monolayer semiconductor nanocavity lasers with ultralow thresholds

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; et al

    2015-03-16

    Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter1–5, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC)6–8. However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots7, extreme difficulty in current injection8, and lackmore » of compatibility with electronic circuits7,8. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers7. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.« less

  14. Acoustic emission sensor radiation damage threshold experiment

    SciTech Connect (OSTI)

    Beeson, K.M.; Pepper, C.E.

    1994-09-01

    Determination of the threshold for damage to acoustic emission sensors exposed to radiation is important in their application to leak detection in radioactive waste transport and storage. Proper response to system leaks is necessary to ensure the safe operation of these systems. A radiation impaired sensor could provide ``false negative or false positive`` indication of acoustic signals from leaks within the system. Research was carried out in the Radiochemical Technology Division at Oak Ridge National Laboratory to determine the beta/gamma radiation damage threshold for acoustic emission sensor systems. The individual system consisted of an acoustic sensor mounted with a two part epoxy onto a stainless steel waveguide. The systems were placed in an irradiation fixture and exposed to a Cobalt-60 source. After each irradiation, the sensors were recalibrated by Physical Acoustics Corporation. The results were compared to the initial calibrations performed prior to irradiation and a control group, not exposed to radiation, was used to validate the results. This experiment determines the radiation damage threshold of each acoustic sensor system and verifies its life expectancy, usefulness and reliability for many applications in radioactive environments.

  15. Threshold photodetachment spectroscopy of negative ions

    SciTech Connect (OSTI)

    Kitsopoulos, T.N.

    1991-12-01

    This thesis is concerned with the development and application of high resolution threshold photodetachment spectroscopy of negative ions. Chapter I deals with the principles of our photodetachment technique, and in chapter II a detailed description of the apparatus is presented. The threshold photodetachment spectra of I{sup {minus}}, and SH{sup {minus}}, presented in the last sections of chapter II, indicated that a resolution of 3 cm{sup {minus}1} can be achieved using our technique. In chapter III the threshold photodetachment spectroscopy study of the transition state region of I + HI and I + Di reactions is discussed. Our technique probes the transition state region directly, and the results of our study are the first unambiguous observations of reactive resonances in a chemical reaction. Chapters IV, V and VI are concerned with the spectroscopy of small silicon and carbon clusters. From our spectra we were able to assign electronic state energies and vibrational frequencies for the low lying electronics states of Si{sub n} (n=2,3,4), C{sub 5} and their corresponding anions.

  16. Measurement and modeling of infrared nonlinear absorption coefficients and laser-induced damage thresholds in Ge and GaSb

    SciTech Connect (OSTI)

    Wagner, T. J.; Bohn, M. J.; Coutu, R. A. Jr.; Gonzalez, L. P.; Murray, J. M.; Guha, S.; Schepler, K. L.

    2010-10-15

    Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 {mu}m for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 {mu}m and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al{sub 2}O{sub 3} anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond pulses, respectively.

  17. Category 3 threshold quantities for hazard categorization of nonreactor facilities

    SciTech Connect (OSTI)

    Mandigo, R.L.

    1996-02-13

    This document provides the information necessary to determine Hazard Category 3 threshold quantities for those isotopes of interest not listed in WHC-CM-4-46, Section 4, Table 1.''Threshold Quantities.''

  18. Threshold Phenomena in a Throbbing Complex Plasma

    SciTech Connect (OSTI)

    Mikikian, Maxime; Coueedel, Lenaiec; Cavarroc, Marjorie; Tessier, Yves; Boufendi, Laiefa

    2010-08-13

    In complex plasmas, the trapped dust particle cloud is often characterized by a central dust-free region ('void'). The void induces a spatial inhomogeneity of the dust particle distribution and is at the origin of many intricate unstable phenomena. One type of this kind of behavior is the so-called heartbeat instability consisting of successive contractions and expansions of the void. This instability is characterized by a strong nonlinear dynamics which can reveal the occurrence of incomplete sequences corresponding to failed contractions. Experimental results based on high-speed imaging are presented for the first time and underline this threshold effect in both the dust cloud motion and the evolution of the plasma light emission.

  19. Review of recent theories and experiments for improving high-power microwave window breakdown thresholds

    SciTech Connect (OSTI)

    Chang Chao; Liu Guozhi; Tang Chuanxiang; Chen Changhua; Fang Jinyong

    2011-05-15

    Dielectric window breakdown is a serious challenge in high-power microwave (HPM) transmission and radiation. Breakdown at the vacuum/dielectric interface is triggered by multipactor and finally realized by plasma avalanche in the ambient desorbed or evaporated gas layer above the dielectric. Methods of improving breakdown thresholds are key challenges in HPM systems. First, the main theoretical and experimental progress is reviewed. Next, the mechanisms of multipactor suppression for periodic rectangular and triangular surface profiles by dynamic analysis and particle-in-cell simulations are surveyed. Improved HPM breakdown thresholds are demonstrated by proof-of-principle and multigigawatt experiments. The current theories and experiments of using dc magnetic field to resonantly accelerate electrons to suppress multipactor are also synthesized. These methods of periodic profiles and magnetic field may solve the key issues of HPM vacuum dielectric breakdown.

  20. Optical ranked-order filtering using threshold decomposition

    DOE Patents [OSTI]

    Allebach, Jan P.; Ochoa, Ellen; Sweeney, Donald W.

    1990-01-01

    A hybrid optical/electronic system performs median filtering and related ranked-order operations using threshold decomposition to encode the image. Threshold decomposition transforms the nonlinear neighborhood ranking operation into a linear space-invariant filtering step followed by a point-to-point threshold comparison step. Spatial multiplexing allows parallel processing of all the threshold components as well as recombination by a second linear, space-invariant filtering step. An incoherent optical correlation system performs the linear filtering, using a magneto-optic spatial light modulator as the input device and a computer-generated hologram in the filter plane. Thresholding is done electronically. By adjusting the value of the threshold, the same architecture is used to perform median, minimum, and maximum filtering of images. A totally optical system is also disclosed.

  1. Optical ranked-order filtering using threshold decomposition

    DOE Patents [OSTI]

    Allebach, J.P.; Ochoa, E.; Sweeney, D.W.

    1987-10-09

    A hybrid optical/electronic system performs median filtering and related ranked-order operations using threshold decomposition to encode the image. Threshold decomposition transforms the nonlinear neighborhood ranking operation into a linear space-invariant filtering step followed by a point-to-point threshold comparison step. Spatial multiplexing allows parallel processing of all the threshold components as well as recombination by a second linear, space-invariant filtering step. An incoherent optical correlation system performs the linear filtering, using a magneto-optic spatial light modulator as the input device and a computer-generated hologram in the filter plane. Thresholding is done electronically. By adjusting the value of the threshold, the same architecture is used to perform median, minimum, and maximum filtering of images. A totally optical system is also disclosed. 3 figs.

  2. Probabilistic Shock Iinitiation Thresholds and QMU Applications

    SciTech Connect (OSTI)

    Hrousis, C A; Gresshoff, M; Overturf, G E

    2009-04-10

    The Probabilistic Threshold Criterion (PTC) Project at LLNL develops phenomenological criteria for establishing margin of safety or performance margin on high explosive (HE) initiation in the high-speed impact regime, creating tools for safety assessment and design of initiation systems and HE trains in general. Until recently, there has been little foundation for probabilistic assessment of HE initiation scenarios. This work attempts to use probabilistic information that is available from both historic and ongoing tests to develop a basis for such assessment. Current PTC approaches start with the functional form of James Initiation Criterion as a backbone, and generalize to include varying areas of initiation and provide a probabilistic response based on test data. Recent work includes application of the PTC methodology to safety assessments involving a donor charge detonation and the need for assessment of a nearby acceptor charge's response, as well as flyer-acceptor configurations, with and without barriers. Results to date are in agreement with other less formal assessment protocols, and indicate a promising use for PTC-based assessments. In particular, there is interest in this approach because it supports the Quantified Margins and Uncertainties (QMU) framework for establishing confidence in the performance and/or safety of an HE system.

  3. MinorConstructionThresholdGuidance.PDF | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    MinorConstructionThresholdGuidance.PDF MinorConstructionThresholdGuidance.PDF (165.68 KB) More Documents & Publications Audit Report: OAS-M-15-02 CX-008733: Categorical Exclusion Determination Microsoft PowerPoint - 04 Melendez Rimando Restructuring of EM Portfolio Briefing 3 March 2010 rev 2 rcvd 8 Mar 1100 [Compatibi

  4. Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition

    SciTech Connect (OSTI)

    Ahn, Cheol Hyoun; Hee Kim, So; Gu Yun, Myeong; Koun Cho, Hyung

    2014-12-01

    In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents. The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition). The TFT with ascending step-composition channel structure (5 → 10 → 14 at. % Al composition) showed relatively negative threshold voltage (−3.7 V) and good instability characteristics with a reduced threshold voltage shift (Δ 1.4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents. Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.5 cm{sup 2}/V s. We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.

  5. Damage threshold of platinum coating used for optics for self...

    Office of Scientific and Technical Information (OSTI)

    used for optics for self-seeding of soft x-ray free electron laser Citation Details In-Document Search Title: Damage threshold of platinum coating used for optics for ...

  6. Incoherent photoproduction of {eta} mesons from the deuteron near threshold

    SciTech Connect (OSTI)

    Sibirtsev, A.; Elster, Ch.; Haidenbauer, J.; Speth, J.

    2001-08-01

    Incoherent photoproduction of the {eta} meson on the deuteron is studied for photon energies from threshold to 800 MeV. The dominant contribution, the {gamma}N-{eta}N amplitude, is described within an isobar model. The final state interaction derived from the CD-Bonn potential is included and found to be important for the description of the production cross section close to threshold. Possible effects from the {eta}N final state interaction are discussed.

  7. Photonic layered media

    DOE Patents [OSTI]

    Fleming, James G.; Lin, Shawn-Yu

    2002-01-01

    A new class of structured dielectric media which exhibit significant photonic bandstructure has been invented. The new structures, called photonic layered media, are easy to fabricate using existing layer-by-layer growth techniques, and offer the ability to significantly extend our practical ability to tailor the properties of such optical materials.

  8. Scintillator reflective layer coextrusion

    DOE Patents [OSTI]

    Yun, Jae-Chul; Para, Adam

    2001-01-01

    A polymeric scintillator has a reflective layer adhered to the exterior surface thereof. The reflective layer comprises a reflective pigment and an adhesive binder. The adhesive binder includes polymeric material from which the scintillator is formed. A method of forming the polymeric scintillator having a reflective layer adhered to the exterior surface thereof is also provided. The method includes the steps of (a) extruding an inner core member from a first amount of polymeric scintillator material, and (b) coextruding an outer reflective layer on the exterior surface of the inner core member. The outer reflective layer comprises a reflective pigment and a second amount of the polymeric scintillator material.

  9. Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Wednesday, 29 March 2006 00:00 A threshold law describes the dependence of a reaction ... threshold behavior with a threshold law or a departure from it can be a sensitive ...

  10. Threshold magnitudes for a multichannel correlation detector in background seismicity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Carmichael, Joshua D.; Hartse, Hans

    2016-04-01

    Colocated explosive sources often produce correlated seismic waveforms. Multichannel correlation detectors identify these signals by scanning template waveforms recorded from known reference events against "target" data to find similar waveforms. This screening problem is challenged at thresholds required to monitor smaller explosions, often because non-target signals falsely trigger such detectors. Therefore, it is generally unclear what thresholds will reliably identify a target explosion while screening non-target background seismicity. Here, we estimate threshold magnitudes for hypothetical explosions located at the North Korean nuclear test site over six months of 2010, by processing International Monitoring System (IMS) array data with a multichannelmore » waveform correlation detector. Our method (1) accounts for low amplitude background seismicity that falsely triggers correlation detectors but is unidentifiable with conventional power beams, (2) adapts to diurnally variable noise levels and (3) uses source-receiver reciprocity concepts to estimate thresholds for explosions spatially separated from the template source. Furthermore, we find that underground explosions with body wave magnitudes mb = 1.66 are detectable at the IMS array USRK with probability 0.99, when using template waveforms consisting only of P -waves, without false alarms. We conservatively find that these thresholds also increase by up to a magnitude unit for sources located 4 km or more from the Feb.12, 2013 announced nuclear test.« less

  11. Near-threshold photoproduction of Φ mesons from deuterium

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qian, X.; Chen, W.; Gao, H.; Hicks, K.; Kramer, K.; Laget, J. M.; Mibe, T.; Qiang, Y.; Stepanyan, S.; Tedeschi, D. J.; et al

    2011-01-05

    In this report, we measure the differential cross section onmore » $$\\phi$$-meson photoproduction from deuterium near the production threshold for a proton using the CLAS detector and a tagged-photon beam in Hall B at Jefferson Lab. The measurement was carried out by a triple coincidence detection of a proton, $K^+$ and $K^-$ near the theoretical production threshold of 1.57 GeV. Moreover, the extracted differential cross sections $$\\frac{d\\sigma}{dt}$$ for the initial photon energy from 1.65-1.75 GeV are consistent with predictions based on a quasifree mechanism. Ultimately, this experiment establishes a baseline for a future experimental search for an exotic $$\\phi$$-N bound state from heavier nuclear targets utilizing subthreshold/near-threshold production of $$\\phi$$ mesons.« less

  12. On the mixing time of geographical threshold graphs

    SciTech Connect (OSTI)

    Bradonjic, Milan

    2009-01-01

    In this paper, we study the mixing time of random graphs generated by the geographical threshold graph (GTG) model, a generalization of random geometric graphs (RGG). In a GTG, nodes are distributed in a Euclidean space, and edges are assigned according to a threshold function involving the distance between nodes as well as randomly chosen node weights. The motivation for analyzing this model is that many real networks (e.g., wireless networks, the Internet, etc.) need to be studied by using a 'richer' stochastic model (which in this case includes both a distance between nodes and weights on the nodes). We specifically study the mixing times of random walks on 2-dimensional GTGs near the connectivity threshold. We provide a set of criteria on the distribution of vertex weights that guarantees that the mixing time is {Theta}(n log n).

  13. Layered plasma polymer composite membranes

    DOE Patents [OSTI]

    Babcock, W.C.

    1994-10-11

    Layered plasma polymer composite fluid separation membranes are disclosed, which comprise alternating selective and permeable layers for a total of at least 2n layers, where n is [>=]2 and is the number of selective layers. 2 figs.

  14. Layered plasma polymer composite membranes

    DOE Patents [OSTI]

    Babcock, Walter C.

    1994-01-01

    Layered plasma polymer composite fluid separation membranes are disclosed, which comprise alternating selective and permeable layers for a total of at least 2n layers, where n is .gtoreq.2 and is the number of selective layers.

  15. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    SciTech Connect (OSTI)

    Fill, Matthias; Phocone AG, 8005 Zurich ; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

    2013-11-11

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  16. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  17. Multiple density layered insulator

    DOE Patents [OSTI]

    Alger, Terry W.

    1994-01-01

    A multiple density layered insulator for use with a laser is disclosed wh provides at least two different insulation materials for a laser discharge tube, where the two insulation materials have different thermoconductivities. The multiple layer insulation materials provide for improved thermoconductivity capability for improved laser operation.

  18. Multiple density layered insulator

    DOE Patents [OSTI]

    Alger, T.W.

    1994-09-06

    A multiple density layered insulator for use with a laser is disclosed which provides at least two different insulation materials for a laser discharge tube, where the two insulation materials have different thermoconductivities. The multiple layer insulation materials provide for improved thermoconductivity capability for improved laser operation. 4 figs.

  19. Multiple layer insulation cover

    DOE Patents [OSTI]

    Farrell, James J.; Donohoe, Anthony J.

    1981-11-03

    A multiple layer insulation cover for preventing heat loss in, for example, a greenhouse, is disclosed. The cover is comprised of spaced layers of thin foil covered fabric separated from each other by air spaces. The spacing is accomplished by the inflation of spaced air bladders which are integrally formed in the cover and to which the layers of the cover are secured. The bladders are inflated after the cover has been deployed in its intended use to separate the layers of the foil material. The sizes of the material layers are selected to compensate for sagging across the width of the cover so that the desired spacing is uniformly maintained when the cover has been deployed. The bladders are deflated as the cover is stored thereby expediting the storage process and reducing the amount of storage space required.

  20. Threshold responses to interacting global changes in a California grassland ecosystem

    SciTech Connect (OSTI)

    Field, Christopher; Cortinas, Susan

    2015-02-02

    Final Report for Threshold responses to interacting global changes in a California grassland ecosystem

  1. ARM - VAP Product - lbtm3minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    minnis Documentation lbtm-minnis : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : LBTM3MINNIS Layered Bispectral Threshold Method (LBTM) cloud products derived from GMS-5 Active Dates 1998.01.03 - 2003.05.21 Originating VAP Process Minnis Cloud Products Using LBTM Algorithm : LBTM-MINNIS Measurements The measurements below provided by this

  2. Compliant layer chucking surface

    DOE Patents [OSTI]

    Blaedel, Kenneth L.; Spence, Paul A.; Thompson, Samuel L.

    2004-12-28

    A method and apparatus are described wherein a thin layer of complaint material is deposited on the surface of a chuck to mitigate the deformation that an entrapped particle might cause in the part, such as a mask or a wafer, that is clamped to the chuck. The harder particle will embed into the softer layer as the clamping pressure is applied. The material composing the thin layer could be a metal or a polymer for vacuum or electrostatic chucks. It may be deposited in various patterns to affect an interrupted surface, such as that of a "pin" chuck, thereby reducing the probability of entrapping a particle.

  3. Boundary Layer Structure:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Boundary Layer Structure: a comparison between methods and sites Thiago Biscaro Suzane de Sá Jae-In Song Shaoyue "Emily" Qiu Mentors: Virendra Ghate and Ewan O'Connor July 24 2015 1 st ever ARM Summer Training Outline * IntroducQon * Methodology * Results - SGP - MAO - Comparison between the 2 sites * Conclusions INTRODUCTION Focus: esQmates of PBL height Boundary Layer: "The boUom layer of the troposphere that is in contact with the surface of the earth." (AMS, Glossary of

  4. Structured luminescence conversion layer

    DOE Patents [OSTI]

    Berben, Dirk; Antoniadis, Homer; Jermann, Frank; Krummacher, Benjamin Claus; Von Malm, Norwin; Zachau, Martin

    2012-12-11

    An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern.

  5. A Survey of Architectural Techniques for Near-Threshold Computing

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mittal, Sparsh

    2015-12-28

    Energy efficiency has now become the primary obstacle in scaling the performance of all classes of computing systems. In low-voltage computing and specifically, near-threshold voltage computing (NTC), which involves operating the transistor very close to and yet above its threshold voltage, holds the promise of providing many-fold improvement in energy efficiency. However, use of NTC also presents several challenges such as increased parametric variation, failure rate and performance loss etc. Our paper surveys several re- cent techniques which aim to offset these challenges for fully leveraging the potential of NTC. By classifying these techniques along several dimensions, we also highlightmore » their similarities and differences. Ultimately, we hope that this paper will provide insights into state-of-art NTC techniques to researchers and system-designers and inspire further research in this field.« less

  6. Threshold π0 Photoproduction on Transverse Polarised Protons at MAMI

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schumann, S.

    2015-09-14

    Polarisation-dependent differential cross sections σT associated with the target asymmetry T have been measured for the reaction γ p-→ p π0 with transverse target polarisation from π0 threshold up to photon energies of 190 MeV. Additionally, the data were obtained using a frozen-spin butanol target with the Crystal Ball / TAPS detector set-up and the Glasgow photon tagging system at the Mainz Microtron MAMI. Our results for σT have been used in combination with our previous measurements of the unpolarised cross section σ0 and the beam asymmetry Σ for a model-independent determination of S and P wave multipoles in themore » π0 threshold region, which includes for the first time a direct determination of the imaginary part of the E0+ multipole.« less

  7. Damage of multilayer optics with varying capping layers induced by focused extreme ultraviolet beam

    SciTech Connect (OSTI)

    Jody Corso, Alain; Nicolosi, Piergiorgio; Nardello, Marco; Guglielmina Pelizzo, Maria; Barkusky, Frank; Mann, Klaus; Mueller, Matthias

    2013-05-28

    Extreme ultraviolet Mo/Si multilayers protected by capping layers of different materials were exposed to 13.5 nm plasma source radiation generated with a table-top laser to study the irradiation damage mechanism. Morphology of single-shot damaged areas has been analyzed by means of atomic force microscopy. Threshold fluences were evaluated for each type of sample in order to determine the capability of the capping layer to protect the structure underneath.

  8. Predicting threshold and location of laser damage on optical surfaces

    DOE Patents [OSTI]

    Siekhaus, Wigbert

    1987-01-01

    An apparatus useful in the prediction of the damage threshold of various optical devices, the location of weak spots on such devices and the location, identification, and elimination of optical surface impurities comprising, a focused and pulsed laser, an photo electric detector/imaging means, and a timer. The weak spots emit photoelectrons when subjected to laser intensities that are less than the intensity actually required to produce the damage. The weak spots may be eliminated by sustained exposure to the laser beam.

  9. THRESHOLD FOR EXTENDED EMISSION IN SHORT GAMMA-RAY BURSTS

    SciTech Connect (OSTI)

    Norris, Jay P.; Gehrels, Neil

    2010-07-01

    The initial pulse complex (IPC) in short gamma-ray bursts is sometimes accompanied by a softer, low-intensity extended emission (EE) component. In cases where such a component is not observed, it is not clear if it is present but below the detection threshold. Using Bayesian Block (BB) methods, we measure the EE component and show that it is present in one-quarter of a Swift/BAT sample of 51 short bursts, as was found for the Compton/BATSE sample. We simulate bursts with EE to calibrate the BAT threshold for EE detection and show that this component would have been detected in nearly half of BAT short bursts if it were present, to intensities {approx}10{sup -2} counts cm{sup -2} s{sup -1}, a factor of 5 lower than actually observed in short bursts. In the BAT sample, the ratio of average EE intensity to IPC peak intensity, R{sub int}, ranges over a factor of 25, R{sub int} {approx} 3 x 10{sup -3} to 8 x 10{sup -2}. In comparison, for the average of the 39 bursts without an EE component, the 2{sigma} upper limit is R{sub int} < 8 x 10{sup -4}. These results suggest that a physical threshold effect operates near R{sub int} {approx} few x 10{sup -3} below which the EE component is not manifest.

  10. Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment Print Wednesday, 29 March 2006 00:00 A threshold law describes the dependence of a reaction yield near a reaction threshold. It is also a signature of the physical forces involved in the reaction, so the agreement of an observed threshold behavior with a threshold law or a departure from it can be a sensitive probe into how well the reaction physics is

  11. Layered electrode for electrochemical cells

    DOE Patents [OSTI]

    Swathirajan, Swathy; Mikhail, Youssef M.

    2001-01-01

    There is provided an electrode structure comprising a current collector sheet and first and second layers of electrode material. Together, the layers improve catalyst utilization and water management.

  12. Layered semiconductor neutron detectors

    DOE Patents [OSTI]

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  13. Predicting threshold and location of laser damage on optical surfaces

    DOE Patents [OSTI]

    Siekhaus, W.

    1985-02-04

    Disclosed is an apparatus useful in the prediction of the damage threshold of various optical devices, the location of weak spots on such devices and the location, identification, and elimination of optical surface impurities. The apparatus comprises a focused and pulsed laser, a photo electric detector/imaging means, and a timer. The weak spots emit photoelectrons when subjected to laser intensities that are less than the intensity actually required to produce the damage. The weak spots may be eliminated by sustained exposure to the laser beam.

  14. CNEEC - Atomic Layer Deposition Tutorial by Stacey Bent

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition

  15. Pressure Systems Stored-Energy Threshold Risk Analysis

    SciTech Connect (OSTI)

    Paulsen, Samuel S.

    2009-08-25

    Federal Regulation 10 CFR 851, which became effective February 2007, brought to light potential weaknesses regarding the Pressure Safety Program at the Pacific Northwest National Laboratory (PNNL). The definition of a pressure system in 10 CFR 851 does not contain a limit based upon pressure or any other criteria. Therefore, the need for a method to determine an appropriate risk-based hazard level for pressure safety was identified. The Laboratory has historically used a stored energy of 1000 lbf-ft to define a pressure hazard; however, an analytical basis for this value had not been documented. This document establishes the technical basis by evaluating the use of stored energy as an appropriate criterion to establish a pressure hazard, exploring a suitable risk threshold for pressure hazards, and reviewing the methods used to determine stored energy. The literature review and technical analysis concludes the use of stored energy as a method for determining a potential risk, the 1000 lbf-ft threshold, and the methods used by PNNL to calculate stored energy are all appropriate. Recommendations for further program improvements are also discussed

  16. Ionization Thresholds of Small Carbon Clusters: Tunable VUVExperiments and Theory

    SciTech Connect (OSTI)

    Belau, Leonid; Wheeler, Steven E.; Ticknor, Brian W.; Ahmed,Musahid; Leone, Stephen R.; Allen, Wesley D.; Schaefer III, Henry F.; Duncan, Michael A.

    2007-07-31

    Small carbon clusters (Cn, n = 2-15) are produced in amolecular beam by pulsed laser vaporization and studied with vacuumultraviolet (VUV) photoionization mass spectrometry. The required VUVradiation in the 8-12 eV range is provided by the Advanced Light Source(ALS) at the Lawrence Berkeley National Laboratory. Mass spectra atvarious ionization energies reveal the qualitative relative abundances ofthe neutral carbon clusters produced. By far the most abundant species isC3. Using the tunability of the ALS, ionization threshold spectra arerecorded for the clusters up to 15 atoms in size. The ionizationthresholds are compared to those measured previously with charge-transferbracketing methods. To interpret the ionization thresholds for differentcluster sizes, new ab initio calculations are carried out on the clustersfor n = 4-10. Geometric structures are optimized at the CCSD(T) levelwith cc-pVTZ (or cc-pVDZ) basis sets, and focal point extrapolations areapplied to both neutral and cation species to determine adiabatic andvertical ionization potentials. The comparison of computed and measuredionization potentials makes it possible to investigate the isomericstructures of the neutral clusters produced in this experiment. Themeasurements are inconclusive for the n = 4-6 species because ofunquenched excited electronic states. However, the data provide evidencefor the prominence of linear structures for the n = 7, 9, 11, 13 speciesand the presence of cyclic C10.

  17. The NEPA threshold question revisited: Proposed'' actions and continuing'' activities

    SciTech Connect (OSTI)

    Wolff, T.A. ); Hansen, R.P. )

    1993-01-01

    The National Environmental Policy Act (NEPA) requires Federal agencies to include a detailed statement'' in every recommendation or report on proposals'' for major Federal actions significantly affecting the quality of the human environment.'' Unless the three elements of a proposal are present (major, federal, and action), preparation of a detailed statement is not required. This paper addresses the practical decision-making dilemma that attends determinations of what types of Federal activities meet the NEPA threshold test under what kinds of varying circumstances. The authors' experience with the US Dept. of Energy (DOE) NEPA documentation is used to discuss how decisions may be made to determine whether a proposed action qualifies for a categorical exclusion'' or whether it requires preparation of an environmental assessment (EA) or an environmental impact statement (EIS). The concept of new'' actions versus continuing'' actions which may be bounded'' by previous NEPA documentation is also discussed. A dichotomous key for separating or combining Federal action'' candidates for different levels of NEPA documentation is provided. Leading court opinions on the threshold question and related issues are discussed in lay terms.

  18. Distortion of power law blinking with binning and thresholding

    SciTech Connect (OSTI)

    Amecke, Nicole; Heber, André; Cichos, Frank

    2014-03-21

    Fluorescence intermittency is a random switching between emitting (on) and non-emitting (off) periods found for many single chromophores such as semiconductor quantum dots and organic molecules. The statistics of the duration of on- and off-periods are commonly determined by thresholding the emission time trace of a single chromophore and appear to be power law distributed. Here we test with the help of simulations if the experimentally determined power law distributions can actually reflect the underlying statistics. We find that with the experimentally limited time resolution real power law statistics with exponents α{sub on/off} ≳ 1.6, especially if α{sub on} ≠ α{sub off} would not be observed as such in the experimental data after binning and thresholding. Instead, a power law appearance could simply be obtained from the continuous distribution of intermediate intensity levels. This challenges much of the obtained data and the models describing the so-called power law blinking.

  19. Layered seal for turbomachinery

    DOE Patents [OSTI]

    Sarawate, Neelesh Nandkumar; Morgan, Victor John; Weber, David Wayne

    2015-11-20

    The present application provides seal assemblies for reducing leakages between adjacent components of turbomachinery. The seal assemblies may include outer shims, and at least a portion of the outer shims may be substantially impervious. At least one of the outer shims may be configured for sealing engagement with seal slots of the adjacent components. The seal assemblies may also include at least one of an inner shim and a filler layer positioned between the outer shims. The at least one inner shim may be substantially solid and the at least one filler layer may be relatively porous. The seal assemblies may be sufficiently flexible to account for misalignment between the adjacent components, sufficiently stiff to meet assembly requirements, and sufficiently robust to operating meet requirements associated with turbomachinery.

  20. Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment Print A threshold law describes the dependence of a reaction yield near a reaction threshold. It is also a signature of the physical forces involved in the reaction, so the agreement of an observed threshold behavior with a threshold law or a departure from it can be a sensitive probe into how well the reaction physics is understood. A collaboration from Western Michigan University, the ALS, and Denison University has now shown

  1. Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment Print A threshold law describes the dependence of a reaction yield near a reaction threshold. It is also a signature of the physical forces involved in the reaction, so the agreement of an observed threshold behavior with a threshold law or a departure from it can be a sensitive probe into how well the reaction physics is understood. A collaboration from Western Michigan University, the ALS, and Denison University has now shown

  2. Resonances above the proton threshold in 26Si

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chipps, Kelly A.

    2016-03-06

    26Al remains an intriguing target for observational gamma-ray astronomy, thanks to its characteristic decay. The 25Al(p, )26Si reaction is part of a chain that bypasses the production of the observable 26Alg in favor of the isomeric state; its rate at novae temperatures is dominated by a resonance around 400 keV, the precise location and J assignment of which has been hotly debated. Considerable confusion in this regard has arisen from the use of outdated excitation energies and masses. Here, a reanalysis of previous work is completed to first, elucidate the confusion regarding the level structure just above the proton threshold,more » and second, provide focus to future studies.« less

  3. Above-threshold ionization beyond the dipole approximation

    SciTech Connect (OSTI)

    Klaiber, Michael; Hatsagortsyan, Karen Z.; Keitel, Christoph H.

    2005-03-01

    A generalization of the analytical theory of above-threshold ionization in the single active electron approximation is developed while taking into account leading non-dipole and relativistic corrections in the starting Hamiltonian. Special interest is placed on the high energy part of the photoelectron spectrum which consists of a plateau and a characteristic cutoff. It is shown that the correction due to the magnetic component of the laser field gives rise to a decrease of the plateau height, an increase of the maximal cutoff energy, and a drift of the emitted electrons in propagation direction of the laser field. Furthermore, the influence of the relativistic mass shift may become non-neglible by reducing the cutoff energy significantly. Spin effects or the Zitterbewegung play a comparably minor role in the investigated parameter regime of suboptical frequencies and high but not ultra-high laser intensities.

  4. Bone sarcoma in humans induced by radium: A threshold response?

    SciTech Connect (OSTI)

    Rowland, R.E.

    1996-08-01

    The radium 226 and radium 228 have induced malignancies in the skeleton (primarily bone sarcomas) of humans. They have also induced carcinomas in the paranasal sinuses and mastoid air cells. There is no evidence that any leukemias or any other solid cancers have been induced by internally deposited radium. This paper discuses a study conducted on the dial painter population. This study made a concerted effort to verify, for each of the measured radium cases, the published values of the skeletal dose and the initial intake of radium. These were derived from body content measurements made some 40 years after the radium intake. Corrections to the assumed radium retention function resulted in a considerable number of dose changes. These changes have changed the shape of the dose response function. It now appears that the induction of bone sarcomas is a threshold process.

  5. Reexamination of an anomaly in near-threshold pair production

    SciTech Connect (OSTI)

    De Braeckeleer, L.; Adelberger, E.G.; Garcia, A. )

    1992-11-01

    We investigated a reported anomaly in near-threshold pair production, using radioactive sources to measure the {gamma}+Ge{r arrow}{ital e}{sup +}+{ital e}{sup {minus}}+Ge cross-section at {ital E}{sub {gamma}}=1063, 1086, 1112, 1173, 1213, 1299, 1332, and 1408 keV. Although the data agree with the theory (numerical calculations based on an exact partial-wave formulation for a screened central potential) at the higher energies, the data lie above the theory at 1063, 1082, and 1112 keV. The discrepancy is reduced by including the final-state Coulomb interaction between the {ital e}{sup +} and {ital e}{sup {minus}}.

  6. Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

    SciTech Connect (OSTI)

    Ma, H. J. Harsan E-mail: ariando@nus.edu.sg; Zeng, S. W.; Annadi, A.; Ariando E-mail: ariando@nus.edu.sg; Huang, Z.; Venkatesan, T.

    2015-08-15

    The two-dimensional electron gas (2DEG) formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO{sub 3} (LAO) and non-polar SrTiO{sub 3} (STO). Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La{sub 0.5}Sr{sub 0.5}TiO{sub 3} (LSTO) layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

  7. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    SciTech Connect (OSTI)

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar; Okyay, Ali K.; UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  8. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  9. Metal deposition using seed layers

    DOE Patents [OSTI]

    Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

    2013-11-12

    Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

  10. Coupling quantum dots to optical fiber: Low pump threshold laser in the red with a near top hat beam profile

    SciTech Connect (OSTI)

    Cheng, H.; Mironov, A. E.; Ni, J. H.; Yang, H. J.; Chen, W. W.; Dai, Z.; Park, S.-J.; Eden, J. G.; Dragic, P. D.; Dong, J.

    2015-02-23

    Direct coupling of the optical field in a ?244?nm thick, CdSe/ZnS quantum dot film to an optical fiber has yielded lasing in the red (? ? 644?nm) with a threshold pump energy density?layers of ?8?nm diameter quantum dots deposited onto the exterior surface of a 125??m diameter coreless silica fiber, this free-running oscillator produces 134 nJ in 3.6?ns FWHM pulses which correspond to 37?W of peak power from an estimated gain volume of ?4.5??10{sup ?7}?cm{sup 3}. Lasing was confirmed by narrowing of the output optical radiation in both the spectral and temporal domains, and the laser beam intensity profile approximates a top hat.

  11. The Cryogenic Dark Matter Search low ionization-threshold experiment

    SciTech Connect (OSTI)

    Basu Thakur, Ritoban

    2014-01-01

    Over 80 years ago we discovered the presence of Dark Matter in our universe. Endeavors in astronomy and cosmology are in consensus with ever improving precision that Dark Matter constitutes an essential 27% of our universe. The Standard Model of Particle Physics does not provide any answers to the Dark Matter problem. It is imperative that we understand Dark Matter and discover its fundamental nature. This is because, alongside other important factors, Dark Matter is responsible for formation of structure in our universe. The very construct in which we sit is defined by its abundance. The Milky Way galaxy, hence life, wouldn't have formed if small over densities of Dark Matter had not caused sufficient accretion of stellar material. Marvelous experiments have been designed based on basic notions to directly and in-directly study Dark Matter, and the Cryogenic Dark Matter Search (CDMS) experiment has been a pioneer and forerunner in the direct detection field. Generations of the CDMS experiment were designed with advanced scientific upgrades to detect Dark Matter particles of mass O(100) GeV/c2. This mass-scale was set primarily by predictions from Super Symmetry. Around 2013 the canonical SUSY predictions were losing some ground and several observations (rather hints of signals) from various experiments indicated to the possibility of lighter Dark Matter of mass O(10) GeV/c2. While the SuperCDMS experiment was probing the regular parameter space, the CDMSlite experiment was conceived to dedicatedly search for light Dark Matter using a novel technology. "CDMSlite" stands for CDMS - low ionization threshold experiment. Here we utilize a unique electron phonon coupling mechanism to measure ionization generated by scattering of light particles. Typically signals from such low energy recoils would be washed under instrumental noise. In CDMSlite via generation of Luke-Neganov phonons we can detect the small ionization energies, amplified in phonon

  12. Templated, layered manganese phosphate

    DOE Patents [OSTI]

    Thoma, Steven G.; Bonhomme, Francois R.

    2004-08-17

    A new crystalline maganese phosphate composition having an empirical formula: O). The compound was determined to crystallize in the trigonal space group P-3c1 with a=8.8706(4) .ANG., c=26.1580(2) .ANG., and V (volume)=1783 .ANG..sup.3. The structure consists of sheets of corner sharing Mn(II)O.sub.4 and PO.sub.4 tetrahedra with layers of (H.sub.3 NCH.sub.2 CH.sub.2).sub.3 N and water molecules in-between. The pronated (H.sub.3 NCH.sub.2 CH.sub.2).sub.3 N molecules provide charge balancing for the inorganic sheets. A network of hydrogen bonds between water molecules and the inorganic sheets holds the structure together.

  13. DOE Hydrogen and Fuel Cells Program Record 11007: Hydrogen Threshold Cost

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Calculation | Department of Energy 1007: Hydrogen Threshold Cost Calculation DOE Hydrogen and Fuel Cells Program Record 11007: Hydrogen Threshold Cost Calculation The hydrogen threshold cost is defined as the hydrogen cost in the range of $2.00-$4.00/gge (2007$), which represents the cost at which hydrogen fuel cell electric vehicles are projected to become competitive on a cost per mile basis with the competing vehicles (gasoline in hybrid-electric vehicles) in 2020. This record from the

  14. Laser damage threshold measurements of optical materials for direct laser accelerators

    SciTech Connect (OSTI)

    Soong, Ken; Byer, R. L.; Colby, E. R.; England, R. J.; Peralta, E. A.

    2012-12-21

    The laser-damage threshold is a fundamental limit for any dielectric laser-driven accelerator and is set by the material of the structure. In this paper, we present a theoretical model of the laser damage mechanism, in comparison with experimental data on the damage threshold of silicon. Additionally, we present damage threshold measurement data of various optical materials, most of which have not been previously characterized in the picosecond-regime.

  15. No-Impact Threshold Values for NRAP's Reduced Order Models

    SciTech Connect (OSTI)

    Last, George V.; Murray, Christopher J.; Brown, Christopher F.; Jordan, Preston D.; Sharma, Maneesh

    2013-02-01

    The purpose of this study was to develop methodologies for establishing baseline datasets and statistical protocols for determining statistically significant changes between background concentrations and predicted concentrations that would be used to represent a contamination plume in the Gen II models being developed by NRAP’s Groundwater Protection team. The initial effort examined selected portions of two aquifer systems; the urban shallow-unconfined aquifer system of the Edwards-Trinity Aquifer System (being used to develop the ROM for carbon-rock aquifers, and the a portion of the High Plains Aquifer (an unconsolidated and semi-consolidated sand and gravel aquifer, being used to development the ROM for sandstone aquifers). Threshold values were determined for Cd, Pb, As, pH, and TDS that could be used to identify contamination due to predicted impacts from carbon sequestration storage reservoirs, based on recommendations found in the EPA’s ''Unified Guidance for Statistical Analysis of Groundwater Monitoring Data at RCRA Facilities'' (US Environmental Protection Agency 2009). Results from this effort can be used to inform a ''no change'' scenario with respect to groundwater impacts, rather than the use of an MCL that could be significantly higher than existing concentrations in the aquifer.

  16. Laser thermoelastic generation in metals above the melt threshold

    SciTech Connect (OSTI)

    Every, A. G.; Utegulov, Z. N.; Veres, I. A.

    2013-11-28

    An approach is presented for calculating thermoelastic generation of ultrasound in a metal plate exposed to nanosecond pulsed laser heating, sufficient to cause melting but not ablation. Detailed consideration is given to the spatial and temporal profiles of the laser pulse, penetration of the laser beam into the sample, the appearance and subsequent growth and then contraction of the melt pool, and the time dependent thermal conduction in the melt and surrounding solid throughout. The excitation of the ultrasound takes place during and shortly after the laser pulse and occurs predominantly within the thermal diffusion length of a micron or so beneath the surface. It is shown how, because of this, the output of the thermal simulations can be expressed as axially symmetric transient radial and normal surface force distributions. The epicentral displacement response to these force distributions is obtained by two methods, the one based on the elastodynamic Green's functions for plate geometry determined by the Cagniard generalized ray method and the other using a finite element numerical method. The two approaches are in very close agreement. Numerical simulations are reported on the epicentral displacement response of a 3.12 mm thick tungsten plate irradiated with a 4 ns pulsed laser beam with Gaussian spatial profile, at intensities below and above the melt threshold.

  17. Processes for multi-layer devices utilizing layer transfer

    DOE Patents [OSTI]

    Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2015-02-03

    A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

  18. Oxygen-reducing catalyst layer

    DOE Patents [OSTI]

    O'Brien, Dennis P.; Schmoeckel, Alison K.; Vernstrom, George D.; Atanasoski, Radoslav; Wood, Thomas E.; Yang, Ruizhi; Easton, E. Bradley; Dahn, Jeffrey R.; O'Neill, David G.

    2011-03-22

    An oxygen-reducing catalyst layer, and a method of making the oxygen-reducing catalyst layer, where the oxygen-reducing catalyst layer includes a catalytic material film disposed on a substrate with the use of physical vapor deposition and thermal treatment. The catalytic material film includes a transition metal that is substantially free of platinum. At least one of the physical vapor deposition and the thermal treatment is performed in a processing environment comprising a nitrogen-containing gas.

  19. Layer-by-Layer Assembly of Enzymes on Carbon Nanotubes

    SciTech Connect (OSTI)

    Wang, Jun; Liu, Guodong; Lin, Yuehe

    2008-06-01

    The use of Layer-by-layer techniques for immobilizing several types of enzymes, e.g. glucose oxidase (GOx), horse radish oxidases(HRP), and choline oxidase(CHO) on carbon nanotubes and their applications for biosenseing are presented. The enzyme is immobilized on the negatively charged CNT surface by alternatively assembling a cationic polydiallyldimethyl-ammonium chloride (PDDA) layer and a enzyme layer. The sandwich-like layer structure (PDDA/enzyme/PDDA/CNT) formed by electrostatic assembling provides a favorable microenvironment to keep the bioactivity of enzyme and to prevent enzyme molecule leakage. The morphologies and electrocatalytic acitivity of the resulted enzyme film were characterized using TEM and electrochemical techniques, respectively. It was found that these enzyme-based biosensors are very sensitive, selective for detection of biomolecules, e.g. glucose, choline.

  20. Leakage pathway layer for solar cell

    SciTech Connect (OSTI)

    Luan, Andy; Smith, David; Cousins, Peter; Sun, Sheng

    2015-12-01

    Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.

  1. Double-layer ion acceleration triggered by ion magnetization in expanding radiofrequency plasma sources

    SciTech Connect (OSTI)

    Takahashi, Kazunori; Charles, Christine; Boswell, Rod W.; Fujiwara, Tamiya

    2010-10-04

    Ion energy distribution functions downstream of the source exit in magnetically expanding low-pressure plasmas are experimentally investigated for four source tube diameters ranging from about 5 to 15 cm. The magnetic-field threshold corresponding to a transition from a simple expanding plasma to a double layer-containing plasma is observed to increase with a decrease in the source tube diameter. The results demonstrate that for the four geometries, the double layer and the accelerated ion beam form when the ion Larmour radius in the source becomes smaller than the source tube radius, i.e., when the ions become magnetized in the source tube.

  2. Threshold selection for classification of MR brain images by clustering method

    SciTech Connect (OSTI)

    Moldovanu, Simona; Obreja, Cristian; Moraru, Luminita

    2015-12-07

    Given a grey-intensity image, our method detects the optimal threshold for a suitable binarization of MR brain images. In MR brain image processing, the grey levels of pixels belonging to the object are not substantially different from the grey levels belonging to the background. Threshold optimization is an effective tool to separate objects from the background and further, in classification applications. This paper gives a detailed investigation on the selection of thresholds. Our method does not use the well-known method for binarization. Instead, we perform a simple threshold optimization which, in turn, will allow the best classification of the analyzed images into healthy and multiple sclerosis disease. The dissimilarity (or the distance between classes) has been established using the clustering method based on dendrograms. We tested our method using two classes of images: the first consists of 20 T2-weighted and 20 proton density PD-weighted scans from two healthy subjects and from two patients with multiple sclerosis. For each image and for each threshold, the number of the white pixels (or the area of white objects in binary image) has been determined. These pixel numbers represent the objects in clustering operation. The following optimum threshold values are obtained, T = 80 for PD images and T = 30 for T2w images. Each mentioned threshold separate clearly the clusters that belonging of the studied groups, healthy patient and multiple sclerosis disease.

  3. Fabrication of Emissible Metallic Layer-by-Layer Photonic Crystals...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    polymer is coated on the first polymer. A substrate or a multi-layer polymer structure is placed on the filled mold and the resulting structure is exposed to UV light (i.e., is UV...

  4. D0 layer 0 innermost layer of silicon microstrip tracker

    SciTech Connect (OSTI)

    Hanagaki, K.; /Fermilab

    2006-01-01

    A new inner layer silicon strip detector has been built and will be installed in the existing silicon microstrip tracker in D0. They report on the motivation, design, and performance of this new detector.

  5. BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation

    SciTech Connect (OSTI)

    Feng, Jijun; Akimoto, Ryoichi

    2015-10-19

    Low threshold current ridge-waveguide BeZnCdSe quantum-well laser diodes (LDs) have been developed by completely etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, which can suppress the leakage current that flows laterally outside of the electrode. The waveguide LDs are covered with a thick SiO{sub 2} layer and planarized with chemical-mechanical polishing and a reactive ion etching process. Room-temperature lasing under continuous-wave condition is achieved with the laser cavity formed by the cleaved waveguide facets coated with high-reflectivity dielectric films. For a 4 μm-wide green LD lasing around a wavelength of 535 nm, threshold current and voltage of 7.07 mA and 7.89 V are achieved for a cavity length of 300 μm, and the internal differential quantum efficiency, internal absorption loss, gain constant, and nominal transparency current density are estimated to be 27%, 4.09 cm{sup −1}, 29.92 (cm × μm)/kA and 6.35 kA/(cm{sup 2 }× μm), respectively. This compact device can realize a significantly improved performance with much lower threshold power consumption, which would benefit the potential application for ZnSe-based green LDs as light sources in full-color display and projector devices installed in consumer products such as pocket projectors.

  6. Higgs boson gluon-fusion production beyond threshold in NLO QCD

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anastasiou, Charalampos; Duhr, Claude; Dulat, Falko; Furlan, Elisabetta; Gehrmann, Thomas; Herzog, Franz; Mistlberger, Bernhard

    2015-03-01

    In this article, we compute the gluon fusion Higgs boson cross-section at NLO through the second term in the threshold expansion. This calculation constitutes a major milestone towards the full NLO cross section. Our result has the best formal accuracy in the threshold expansion currently available, and includes contributions from collinear regions besides subleading corrections from soft and hard regions, as well as certain logarithmically enhanced contributions for general kinematics. We use our results to perform a critical appraisal of the validity of the threshold approximation at NLO in perturbative QCD.

  7. Higgs boson gluon-fusion production beyond threshold in N3LO QCD

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anastasiou, Charalampos; Duhr, Claude; Dulat, Falko; Furlan, Elisabetta; Gehrmann, Thomas; Herzog, Franz; Mistlberger, Bernhard

    2015-03-18

    In this study, we compute the gluon fusion Higgs boson cross-section at N3LO through the second term in the threshold expansion. This calculation constitutes a major milestone towards the full N3LO cross section. Our result has the best formal accuracy in the threshold expansion currently available, and includes contributions from collinear regions besides subleading corrections from soft and hard regions, as well as certain logarithmically enhanced contributions for general kinematics. We use our results to perform a critical appraisal of the validity of the threshold approximation at N3LO in perturbative QCD.

  8. JET/DIII-D size scaling of the H-mode power threshold

    SciTech Connect (OSTI)

    Carlstrom, T.N.; Campbell, D.J.; Cordey, J.G.

    1995-10-01

    Previous scaling results indicate that the H-mode power threshold increases nearly linearly with the line averaged density, {bar n}{sub e}, and the toroidal field, B{sub t}. The power threshold was measured in similar, ITER-like, discharges in JET and DIII-D, at the same {bar n}{sub e} and B{sub t} in order to determine the size scaling of the power threshold. The results indicate a size scaling proportional to the surface area, S{sup 0.5}, which is weaker than the linear surface area dependence previously assumed.

  9. Boundary Layer Cloud Turbulence Characteristics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Boundary Layer Cloud Turbulence Characteristics Virendra Ghate Bruce Albrecht Parameter Observational Readiness (/10) Modeling Need (/10) Cloud Boundaries 9 9 Cloud Fraction Variance Skewness Up/Downdraft coverage Dominant Freq. signal Dissipation rate ??? Observation-Modeling Interface

  10. Intermetallic Layers in Soldered Joints

    Energy Science and Technology Software Center (OSTI)

    1998-12-10

    ILAG solves the one-dimensional partial differential equations describing the multiphase, multicomponent, solid-state diffusion-controlled growth of intermetallic layers in soldered joints. This software provides an analysis capability for materials researchers to examine intermetallic growth mechanisms in a wide variety of defense and commercial applications involving both traditional and advanced materials. ILAG calculates the interface positions of the layers, as well as the spatial distribution of constituent mass fractions, and outputs the results at user-prescribed simulation times.

  11. Linking the micro and macro: L-H transition dynamics and threshold...

    Office of Scientific and Technical Information (OSTI)

    Linking the micro and macro: L-H transition dynamics and threshold physics Citation Details In-Document Search Title: Linking the micro and macro: L-H transition dynamics and ...

  12. N 3 LO Higgs boson and Drell-Yan production at threshold: The...

    Office of Scientific and Technical Information (OSTI)

    N 3 LO Higgs boson and Drell-Yan production at threshold: The one-loop two-emission contribution Citation Details In-Document Search Title: N 3 LO Higgs boson and Drell-Yan ...

  13. Observation of the tune dependence of the stability threshold current in the PSR (Proton Storage Ring)

    SciTech Connect (OSTI)

    Wang, Tai Sen F.; Colton, E.; Lombardi, A.; Neuffer, D.V.; Thiessen, H.A.

    1989-01-01

    In the high-intensity unbunched-beam experiments carried out in the Proton Storage Ring at Los Alamos National Laboratory, the threshold current of vertical transverse instability showed pronounced differences when the betatron tune varied across an integer. In this paper, we shall present our experimental observations and discuss the possible relations between the threshold current and the machine impedance. The possible effects related to the distorted closed orbit are also discussed. 5 refs., 3 figs., 1 tab.

  14. Increase of bulk optical damage threshold fluences of KDP crystals by laser irradiation and heat treatment

    DOE Patents [OSTI]

    Swain, J.E.; Stokowski, S.E.; Milam, D.; Kennedy, G.C.; Rainer, F.

    1982-07-07

    The bulk optical damage threshold fluence of potassium dihydrogen phosphate (KDP) crystals is increased by irradiating the crystals with laser pulses of duration 1 to 20 nanoseconds of increasing fluence, below the optical damage threshold fluence for untreated crystals, or by baking the crystals for times of the order of 24 hours at temperatures of 110 to 165/sup 0/C, or by a combination of laser irradiation and baking.

  15. The FY 2007 Budget Request - On the Threshold of Incredible Advances |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 7 Budget Request - On the Threshold of Incredible Advances The FY 2007 Budget Request - On the Threshold of Incredible Advances DOE's Office of Energy Efficiency and Renewable Energy's fiscal year 2007 budget presentation. FY07_budget_request.pdf (598.17 KB) More Documents & Publications The FY 2008 Budget Request - Twenty in Ten: Strengthening America's Energy Security The FY 2006 Budget Request Federal Support for Hydrogen and Fuel Cell Technologies

  16. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming

    2010-02-23

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  17. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming; Liao, Xianbo; Du, Wenhui

    2011-10-04

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  18. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming; Liao, Xianbo; Du, Wenhui

    2011-02-01

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  19. Estimating Alarm Thresholds for Process Monitoring Data under Different Assumptions about the Data Generating Mechanism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Burr, Tom; Hamada, Michael S.; Howell, John; Skurikhin, Misha; Ticknor, Larry; Weaver, Brian

    2013-01-01

    Process monitoring (PM) for nuclear safeguards sometimes requires estimation of thresholds corresponding to small false alarm rates. Threshold estimation dates to the 1920s with the Shewhart control chart; however, because possible new roles for PM are being evaluated in nuclear safeguards, it is timely to consider modern model selection options in the context of threshold estimation. One of the possible new PM roles involves PM residuals, where a residual is defined as residual = data − prediction. This paper reviews alarm threshold estimation, introduces model selection options, and considers a range of assumptions regarding the data-generating mechanism for PM residuals.more » Two PM examples from nuclear safeguards are included to motivate the need for alarm threshold estimation. The first example involves mixtures of probability distributions that arise in solution monitoring, which is a common type of PM. The second example involves periodic partial cleanout of in-process inventory, leading to challenging structure in the time series of PM residuals.« less

  20. Measurement and interpretation of threshold stress intensity factors for steels in high-pressure hydrogen gas.

    SciTech Connect (OSTI)

    Nibur, Kevin A.

    2010-11-01

    Threshold stress intensity factors were measured in high-pressure hydrogen gas for a variety of low alloy ferritic steels using both constant crack opening displacement and rising crack opening displacement procedures. The sustained load cracking procedures are generally consistent with those in ASME Article KD-10 of Section VIII Division 3 of the Boiler and Pressure Vessel Code, which was recently published to guide design of high-pressure hydrogen vessels. Three definitions of threshold were established for the two test methods: K{sub THi}* is the maximum applied stress intensity factor for which no crack extension was observed under constant displacement; K{sub THa} is the stress intensity factor at the arrest position for a crack that extended under constant displacement; and K{sub JH} is the stress intensity factor at the onset of crack extension under rising displacement. The apparent crack initiation threshold under constant displacement, K{sub THi}*, and the crack arrest threshold, K{sub THa}, were both found to be non-conservative due to the hydrogen exposure and crack-tip deformation histories associated with typical procedures for sustained-load cracking tests under constant displacement. In contrast, K{sub JH}, which is measured under concurrent rising displacement and hydrogen gas exposure, provides a more conservative hydrogen-assisted fracture threshold that is relevant to structural components in which sub-critical crack extension is driven by internal hydrogen gas pressure.

  1. Measurement and interpretation of threshold stress intensity factors for steels in high-pressure hydrogen gas.

    SciTech Connect (OSTI)

    Dadfarnia, Mohsen; Nibur, Kevin A.; San Marchi, Christopher W.; Sofronis, Petros; Somerday, Brian P.; Foulk, James W., III; Hayden, Gary A.

    2010-07-01

    Threshold stress intensity factors were measured in high-pressure hydrogen gas for a variety of low alloy ferritic steels using both constant crack opening displacement and rising crack opening displacement procedures. The sustained load cracking procedures are generally consistent with those in ASME Article KD-10 of Section VIII Division 3 of the Boiler and Pressure Vessel Code, which was recently published to guide design of high-pressure hydrogen vessels. Three definitions of threshold were established for the two test methods: K{sub THi}* is the maximum applied stress intensity factor for which no crack extension was observed under constant displacement; K{sub THa} is the stress intensity factor at the arrest position for a crack that extended under constant displacement; and K{sub JH} is the stress intensity factor at the onset of crack extension under rising displacement. The apparent crack initiation threshold under constant displacement, K{sub THi}*, and the crack arrest threshold, K{sub THa}, were both found to be non-conservative due to the hydrogen exposure and crack-tip deformation histories associated with typical procedures for sustained-load cracking tests under constant displacement. In contrast, K{sub JH}, which is measured under concurrent rising displacement and hydrogen gas exposure, provides a more conservative hydrogen-assisted fracture threshold that is relevant to structural components in which sub-critical crack extension is driven by internal hydrogen gas pressure.

  2. Doped LZO buffer layers for laminated conductors

    DOE Patents [OSTI]

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  3. Lubricant-infused nanoparticulate coatings assembled by layer...

    Office of Scientific and Technical Information (OSTI)

    Lubricant-infused nanoparticulate coatings assembled by layer-by-layer deposition Title: Lubricant-infused nanoparticulate coatings assembled by layer-by-layer deposition ...

  4. Organic photovoltaic cells utilizing ultrathin sensitizing layer

    DOE Patents [OSTI]

    Rand, Barry P.; Forrest, Stephen R.

    2011-05-24

    A photosensitive device includes a series of organic photoactive layers disposed between two electrodes. Each layer in the series is in direct contact with a next layer in the series. The series is arranged to form at least one donor-acceptor heterojunction, and includes a first organic photoactive layer comprising a first host material serving as a donor, a thin second organic photoactive layer comprising a second host material disposed between the first and a third organic photoactive layer, and the third organic photoactive layer comprising a third host material serving as an acceptor. The first, second, and third host materials are different. The thin second layer serves as an acceptor relative to the first layer or as a donor relative to the third layer.

  5. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  6. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  7. Chemical solution seed layer for rabits tapes

    DOE Patents [OSTI]

    Goyal, Amit; Paranthaman, Mariappan; Wee, Sung-Hun

    2014-06-10

    A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.

  8. Tail-ion transport and Knudsen layer formation in the presence of magnetic fields

    SciTech Connect (OSTI)

    Schmit, P. F.; Molvig, Kim; Nakhleh, C. W.

    2013-11-15

    Knudsen layer losses of tail fuel ions could reduce significantly the fusion reactivity of highly compressed cylindrical and spherical targets in inertial confinement fusion (ICF). With the class of magnetized ICF targets in mind, the effect of embedded magnetic fields on Knudsen layer formation is investigated for the first time. The modified energy scaling of ion diffusivity in magnetized hot spots is found to suppress the preferential losses of tail-ions perpendicular to the magnetic field lines to a degree that the tail distribution can be at least partially, if not fully, restored. Two simple threshold conditions are identified leading to the restoration of fusion reactivity in magnetized hot spots. A kinetic equation for tail-ion transport in the presence of a magnetic field is derived, and solutions to the equation are obtained numerically in simulations. Numerical results confirm the validity of the threshold conditions for restored reactivity and identify two different asymptotic regimes of the fusion fuel. While Knudsen layer formation is shown to be suppressed entirely in strongly magnetized cylindrical hot spot cavities, uniformly magnetized spherical cavities demonstrate remnant, albeit reduced, levels of tail-ion depletion.

  9. Linking the micro and macro: L-H transition dynamics and threshold physics

    SciTech Connect (OSTI)

    Malkov, M. A. Diamond, P. H.; Miki, K.; Rice, J. E.; Tynan, G. R.

    2015-03-15

    The links between the microscopic dynamics and macroscopic threshold physics of the L → H transition are elucidated. Emphasis is placed on understanding the physics of power threshold scalings, and especially on understanding the minimum in the power threshold as a function of density P{sub thr} (n). By extending a numerical 1D model to evolve both electron and ion temperatures, including collisional coupling, we find that the decrease in P{sub thr} (n) along the low-density branch is due to the combination of an increase in collisional electron-to-ion energy transfer and an increase in the heating fraction coupled to the ions. Both processes strengthen the edge diamagnetic electric field needed to lock in the mean electric field shear for the L→H transition. The increase in P{sub thr} (n) along the high-density branch is due to the increase with ion collisionality of damping of turbulence-driven shear flows. Turbulence driven shear flows are needed to trigger the transition by extracting energy from the turbulence. Thus, we identify the critical transition physics components of the separatrix ion heat flux and the zonal flow excitation. The model reveals a power threshold minimum in density scans as a crossover between the threshold decrease supported by an increase in heat fraction received by ions (directly or indirectly, from electrons) and a threshold increase, supported by the rise in shear flow damping. The electron/ion heating mix emerges as important to the transition, in that it, together with electron-ion coupling, regulates the edge diamagnetic electric field shear. The importance of possible collisionless electron-ion heat transfer processes is explained.

  10. Threshold Values for Identification of Contamination Predicted by Reduced-Order Models

    SciTech Connect (OSTI)

    Last, George V.; Murray, Christopher J.; Bott, Yi-Ju; Brown, Christopher F.

    2014-12-31

    The U.S. Department of Energys (DOEs) National Risk Assessment Partnership (NRAP) Project is developing reduced-order models to evaluate potential impacts on underground sources of drinking water (USDWs) if CO2 or brine leaks from deep CO2 storage reservoirs. Threshold values, below which there would be no predicted impacts, were determined for portions of two aquifer systems. These threshold values were calculated using an interwell approach for determining background groundwater concentrations that is an adaptation of methods described in the U.S. Environmental Protection Agencys Unified Guidance for Statistical Analysis of Groundwater Monitoring Data at RCRA Facilities.

  11. Light-controlled electric Freedericksz threshold in dye doped liquid crystals

    SciTech Connect (OSTI)

    Lucchetti, L.; Catani, L.; Simoni, F.

    2014-05-28

    We report the results of measurements of the threshold of Freedericksz transition in a nematic liquid crystal doped by Methyl-red. We show that in case of dc field the threshold voltage can decrease or increase depending on the light dose, due to the light-induced desorption and adsorption of charge complexes from and on the irradiated surface, that has been recently demonstrated. This effect has the potential to be exploited in optical devices such as liquid crystal microlenses and spatial light modulators.

  12. Experimental Determination of Damage Threshold Characteristics of IR Compatible Optical Materials

    SciTech Connect (OSTI)

    Soong, Ken

    2011-05-20

    The accelerating gradient in a laser-driven dielectric accelerating structure is often limited by the laser damage threshold of the structure. For a given laser-driven dielectric accelerator design, we can maximize the accelerating gradient by choosing the best combination of the accelerator's constituent material and operating wavelength. We present here a model of the damage mechanism from ultrafast infrared pulses and compare that model with experimental measurements of the damage threshold of bulk silicon. Additionally, we present experimental measurements of a variety of candidate materials, thin films, and nanofabricated accelerating structures.

  13. Threshold Values for Identification of Contamination Predicted by Reduced-Order Models

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Last, George V.; Murray, Christopher J.; Bott, Yi-Ju; Brown, Christopher F.

    2014-12-31

    The U.S. Department of Energy’s (DOE’s) National Risk Assessment Partnership (NRAP) Project is developing reduced-order models to evaluate potential impacts on underground sources of drinking water (USDWs) if CO2 or brine leaks from deep CO2 storage reservoirs. Threshold values, below which there would be no predicted impacts, were determined for portions of two aquifer systems. These threshold values were calculated using an interwell approach for determining background groundwater concentrations that is an adaptation of methods described in the U.S. Environmental Protection Agency’s Unified Guidance for Statistical Analysis of Groundwater Monitoring Data at RCRA Facilities.

  14. Optimized capping layers for EUV multilayers

    DOE Patents [OSTI]

    Bajt, Sasa; Folta, James A.; Spiller, Eberhard A.

    2004-08-24

    A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B.sub.4 C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B.sub.4 C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.

  15. Hurricane Sandy Contingency Operation-- Increase in Micro-Purchase and Simplified Acquisition Thresholds for Specific States and Counties

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Department of Energy (DOE) Senior Procurement Executive (SPE) has increased the micro-purchase and simplified acquisition thresholds for Hurricane Sandy Contingency Operation.

  16. Influence of emission threshold of explosive emission cathodes on current waveform in foilless diodes

    SciTech Connect (OSTI)

    Wu, P.; Liu, G. Z.; Huo, S. F.; Sun, J.; Chen, C. H.

    2015-08-15

    The emission threshold of explosive emission cathodes (EECs) is an important factor for beam quality. It can affect the explosive emission delay time, the plasma expansion process on the cathode surface, and even the current amplitude when the current is not fully space-charge-limited. This paper researches the influence of the emission threshold of an annular EEC on the current waveform in a foilless diode when the current is measured by a Rogowski coil. The particle-in-cell simulation which is performed under some tolerable and necessary simplifications shows that the long explosive emission delay time of high-threshold cathodes may leave an apparent peak of displacement current on the rise edge of the current waveform, and this will occur only when the electron emission starts after this peak. The experimental researches, which are performed under a diode voltage of 1 MV and a repetitive frequency of 20 Hz, demonstrate that the graphite cathode has a lower emission threshold and a longer lifetime than the stainless steel cathode according to the variation of the peak of displacement current on the rise edge of the current waveform.

  17. Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

    DOE Patents [OSTI]

    Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

    2013-06-11

    Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

  18. Low-threshold short-cavity diode laser for a miniature atomic clock

    SciTech Connect (OSTI)

    Kargapol'tsev, Sergei V; Velichansky, Vladimir L; Vasil'ev, V V; Kobyakova, M Sh; Morozyuk, A V; Shiryaeva, N V; Konyaev, V P

    2009-06-30

    Short-cavity diode lasers (SCDLs) emitting at the 894-nm D{sub 1} line of caesium are developed. Low threshold currents and power consumption will make it possible to use these lasers in chip-size atomic clocks (CSACs) and magnetometers. The SCDL parameters are comparable with the parameters of surface-emitting lasers. (lasers)

  19. Incorporation of trace elements in Portland cement clinker: Thresholds limits for Cu, Ni, Sn or Zn

    SciTech Connect (OSTI)

    Gineys, N.; Aouad, G.; Sorrentino, F.; Damidot, D.

    2011-11-15

    This paper aims at defining precisely, the threshold limits for several trace elements (Cu, Ni, Sn or Zn) which correspond to the maximum amount that could be incorporated into a standard clinker whilst reaching the limit of solid solution of its four major phases (C{sub 3}S, C{sub 2}S, C{sub 3}A and C{sub 4}AF). These threshold limits were investigated through laboratory synthesised clinkers that were mainly studied by X-ray Diffraction and Scanning Electron Microscopy. The reference clinker was close to a typical Portland clinker (65% C{sub 3}S, 18% C{sub 2}S, 8% C{sub 3}A and 8% C{sub 4}AF). The threshold limits for Cu, Ni, Zn and Sn are quite high with respect to the current contents in clinker and were respectively equal to 0.35, 0.5, 0.7 and 1 wt.%. It appeared that beyond the defined threshold limits, trace elements had different behaviours. Ni was associated with Mg as a magnesium nickel oxide (MgNiO{sub 2}) and Sn reacted with lime to form a calcium stannate (Ca{sub 2}SnO{sub 4}). Cu changed the crystallisation process and affected therefore the formation of C{sub 3}S. Indeed a high content of Cu in clinker led to the decomposition of C{sub 3}S into C{sub 2}S and of free lime. Zn, in turn, affected the formation of C{sub 3}A. Ca{sub 6}Zn{sub 3}Al{sub 4}O{sub 15} was formed whilst a tremendous reduction of C{sub 3}A content was identified. The reactivity of cements made with the clinkers at the threshold limits was followed by calorimetry and compressive strength measurements on cement paste. The results revealed that the doped cements were at least as reactive as the reference cement.

  20. Inkjet Deposition of Layer-by-Layer Assembled Films

    SciTech Connect (OSTI)

    Andres, C. M.; Kotov, Nicholas A.

    2010-09-23

    Layer-by-layer assembly (LBL) can create advanced composites with exceptional properties unavailable by other means, but the laborious deposition process and multiple dipping cycles hamper their utilization in microtechnologies and electronics. Multiple rinse steps provide both structural control and thermodynamic stability to LBL multilayers, but they significantly limit their practical applications and contribute significantly to the processing time and waste. Here we demonstrate that by employing inkjet technology one can deliver the necessary quantities of LBL components required for film buildup without excess, eliminating the need for repetitive rinsing steps. This feature differentiates this approach from all other recognized LBL modalities. Using a model system of negatively charged gold nanoparticles and positively charged poly(diallyldimethylammonium) chloride, the material stability, nanoscale control over thickness, and particle coverage offered by the inkjet LBL technique are shown to be equal or better than the case of multilayers made with traditional dipping cycles. The opportunity for fast deposition of complex metallic patterns using a simple inkjet printer is also shown. The additive nature of LBL deposition based on the formation of insoluble nanoparticle-polyelectrolyte complexes of various compositions provides an excellent opportunity for versatile, multicomponent, and noncontact patterning for the simple production of stratified patterns that are much needed in advanced devices.

  1. ARM - Measurement - Planetary boundary layer height

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govMeasurementsPlanetary boundary layer height ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Measurement : Planetary boundary layer height Top of the planetary boundary layer; also known as depth or height of the mixing layer. Categories Atmospheric State Instruments The above measurement is considered scientifically relevant for the following instruments. Refer to the datastream (netcdf) file headers of each

  2. Biaxially textured metal substrate with palladium layer

    DOE Patents [OSTI]

    Robbins, William B.

    2002-12-31

    Described is an article comprising a biaxially textured metal substrate and a layer of palladium deposited on at least one major surface of the metal substrate; wherein the palladium layer has desired in-plane and out-of-plane crystallographic orientations, which allow subsequent layers that are applied on the article to also have the desired orientations.

  3. Dense, layered membranes for hydrogen separation

    DOE Patents [OSTI]

    Roark, Shane E.; MacKay, Richard; Mundschau, Michael V.

    2006-02-21

    This invention provides hydrogen-permeable membranes for separation of hydrogen from hydrogen-containing gases. The membranes are multi-layer having a central hydrogen-permeable layer with one or more catalyst layers, barrier layers, and/or protective layers. The invention also relates to membrane reactors employing the hydrogen-permeable membranes of the invention and to methods for separation of hydrogen from a hydrogen-containing gas using the membranes and reactors. The reactors of this invention can be combined with additional reactor systems for direct use of the separated hydrogen.

  4. Solar cell with silicon oxynitride dielectric layer

    SciTech Connect (OSTI)

    Shepherd, Michael; Smith, David D

    2015-04-28

    Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0layer is disposed on the back surface of the portion of the substrate. A semiconductor layer is disposed on the silicon oxynitride dielectric layer.

  5. Higher certainty of the laser-induced damage threshold test with a redistributing data treatment

    SciTech Connect (OSTI)

    Jensen, Lars; Mrohs, Marius; Gyamfi, Mark; Mädebach, Heinrich; Ristau, Detlev

    2015-10-15

    As a consequence of its statistical nature, the measurement of the laser-induced damage threshold holds always risks to over- or underestimate the real threshold value. As one of the established measurement procedures, the results of S-on-1 (and 1-on-1) tests outlined in the corresponding ISO standard 21 254 depend on the amount of data points and their distribution over the fluence scale. With the limited space on a test sample as well as the requirements on test site separation and beam sizes, the amount of data from one test is restricted. This paper reports on a way to treat damage test data in order to reduce the statistical error and therefore measurement uncertainty. Three simple assumptions allow for the assignment of one data point to multiple data bins and therefore virtually increase the available data base.

  6. Vibrational Feshbach resonances in near threshold HOCO{sup -} photodetachment: a theoretical study

    SciTech Connect (OSTI)

    Miyabe, Shungo; Haxton, Dan; Lawler, Keith; Orel, Ann; McCurdy, Bill; Rescigno, Tom

    2011-03-02

    The results of a theoretical study of HOCO{sup ?} photodetachment are presented, with a view toward understanding the origin of two peaks observed by Lu and Continetti (Phys. Rev. Lett. 99, 113005 (2007)) in the photoelectron kinetic energy spectrum very close to threshold. It is shown that the peaks can be attributed to vibrational Feshbach resonances of dipole-bound trans-HOCO{sup ?}, and not s- and p-wave shape resonances as previously assumed. Fixed-nuclei variational electron-HOCO scattering calculations are used to compute photodetachment cross sections and laboratory-frame photoelectron angular distributions. The calculations show a broad A??(#25;{pi}*)-shape resonance several eV above threshold.

  7. Threshold ?0 Photoproduction on Transverse Polarised Protons at MAMI

    SciTech Connect (OSTI)

    Schumann, S.

    2015-09-14

    Polarisation-dependent differential cross sections ?T associated with the target asymmetry T have been measured for the reaction ? p-? p ?0 with transverse target polarisation from ?0 threshold up to photon energies of 190 MeV. Additionally, the data were obtained using a frozen-spin butanol target with the Crystal Ball / TAPS detector set-up and the Glasgow photon tagging system at the Mainz Microtron MAMI. Our results for ?T have been used in combination with our previous measurements of the unpolarised cross section ?0 and the beam asymmetry ? for a model-independent determination of S and P wave multipoles in the ?0 threshold region, which includes for the first time a direct determination of the imaginary part of the E0+ multipole.

  8. Communication: Classical threshold law for ion-neutral-neutral three-body recombination

    SciTech Connect (OSTI)

    Pérez-Ríos, Jesús; Greene, Chris H.

    2015-07-28

    A very recently method for classical trajectory calculations for three-body collision [Pérez-Ríos et al., J. Chem. Phys. 140, 044307 (2014)] has been applied to describe ion-neutral-neutral ternary processes for low energy collisions: 0.1 mK–10 mK. As a result, a threshold law for the three-body recombination cross section is obtained and corroborated numerically. The derived threshold law predicts the formation of weakly bound dimers, with binding energies comparable to the collision energy of the collisional partners. In this low energy range, this analysis predicts that molecular ions should dominate over molecular neutrals as the most products formed.

  9. Mixing of partial waves near B*B̄* threshold in e⁺e⁻ annihilation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xin; Voloshin, M. B.

    2013-05-31

    We consider the production of B*B̄* meson pairs in e⁺e⁻ annihilation near the threshold. The rescattering due to pion exchange between the mesons results in a mixing between three partial wave amplitudes: two P-wave amplitudes with the total spin of the meson pair S=0 and S=2 and an F-wave amplitude. The mixing due to pion exchange with a low momentum transfer is calculable up to c.m. energy E≈15–20 MeV above the threshold. We find that the P–F mixing is numerically quite small in this energy range, while the mixing of the two P-wave amplitudes is rapidly changing with energy andmore » can reach of order one at such low energies.« less

  10. Multi Layer Contaminant Migration Model

    Energy Science and Technology Software Center (OSTI)

    1999-07-28

    This computer software augments and enhances certain calculation included in the previously copyrighted Vadose Zone Contaminant Migration Model. The computational method used in this model recognizes the heterogenous nature of the soils and attempts to account for the variability by using four separate layers to simulate the flow of water through the vadose zone. Therefore, the pore-water velocity calculated by the code will be different than the previous model because it accounts for a widermore » variety of soil properties encountered in the vadose zone. This model also performs an additional screening step than in the previous model. In this model the higher value of two different types of Soil Screening Levels are compared to soil concentrations of contaminants. If the contaminant concentration exceeds the highest of two SSLs, then that contaminant is listed. This is consistent with USEPA's Soil Screening Guidance.« less

  11. Determination of the Z` Mass and Couplings Below Threshold at the NLC

    SciTech Connect (OSTI)

    Rizzo, Thomas G.

    1996-12-31

    We investigate the capability of the NLC to indirectly determine both the mass as well as the couplings to leptons and b-quarks of a new neutral gauge boson below direct production threshold. By using data collected at several different values of the collide center of mass energy, we demonstrate how this can be done in an anonymous and model- independent manner. The procedure can be easily extended to the top and charm quark couplings.

  12. Stochastic generation of explicit pore structures by thresholding Gaussian random fields

    SciTech Connect (OSTI)

    Hyman, Jeffrey D.; Winter, C. Larrabee

    2014-11-15

    We provide a description and computational investigation of an efficient method to stochastically generate realistic pore structures. Smolarkiewicz and Winter introduced this specific method in pores resolving simulation of Darcy flows (Smolarkiewicz and Winter, 2010 [1]) without giving a complete formal description or analysis of the method, or indicating how to control the parameterization of the ensemble. We address both issues in this paper. The method consists of two steps. First, a realization of a correlated Gaussian field, or topography, is produced by convolving a prescribed kernel with an initial field of independent, identically distributed random variables. The intrinsic length scales of the kernel determine the correlation structure of the topography. Next, a sample pore space is generated by applying a level threshold to the Gaussian field realization: points are assigned to the void phase or the solid phase depending on whether the topography over them is above or below the threshold. Hence, the topology and geometry of the pore space depend on the form of the kernel and the level threshold. Manipulating these two user prescribed quantities allows good control of pore space observables, in particular the Minkowski functionals. Extensions of the method to generate media with multiple pore structures and preferential flow directions are also discussed. To demonstrate its usefulness, the method is used to generate a pore space with physical and hydrological properties similar to a sample of Berea sandstone. -- Graphical abstract: -- Highlights: An efficient method to stochastically generate realistic pore structures is provided. Samples are generated by applying a level threshold to a Gaussian field realization. Two user prescribed quantities determine the topology and geometry of the pore space. Multiple pore structures and preferential flow directions can be produced. A pore space based on Berea sandstone is generated.

  13. High-Power Electrostatic Discharges in PETN: Threshold and Scaling Experiments

    SciTech Connect (OSTI)

    Liou, W; McCarrick, J F; Hodgin, R L; Phillips, D F

    2010-03-05

    There is a considerable set of data establishing the safety of PETN-based detonators that are insulted by electrostatic discharge (ESD) from a human body. However, the subject of ESD safety has garnered renewed interest because of the sparse data on high-power, low-impedance discharges that result when the source is a metallic object such as a tool. Experiments on as-built components, using pin-to-cap fault circuits through PETN-based detonators, showed significant evidence of a power dependence but with a very broad energy threshold and some uncertainty in the breakdown path. We have performed a series of experiments using a well-defined arc discharge path and a well-characterized source that is capable of independent variation of energy and power. Studies include threshold variation with power, arc length, powder surface area, and surface vs. bulk discharge paths. We find that an energy threshold variation with power does not appear to exist in the tested range of fractions to tens of MW, and that there are many subtleties to proper energy and power bookkeeping. We also present some test results for PBX 9407.

  14. Temperature threshold for nanorod structuring of metal and oxide films grown by glancing angle deposition

    SciTech Connect (OSTI)

    Deniz, Derya; Lad, Robert J.

    2011-01-15

    Thin films of tin (Sn), aluminum (Al), gold (Au), ruthenium (Ru), tungsten (W), ruthenium dioxide (RuO{sub 2}), tin dioxide (SnO{sub 2}), and tungsten trioxide (WO{sub 3}) were grown by glancing angle deposition (GLAD) to determine the nanostructuring temperature threshold, {Theta}{sub T}, above which adatom surface diffusion becomes large enough such that nanorod morphology is no longer formed during growth. The threshold was found to be lower in metals compared to oxides. Films were grown using both dc and pulsed dc magnetron sputtering with continuous substrate rotation over the temperature range from 291 to 866 K. Film morphologies, structures, and compositions were characterized by high resolution scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Films were also grown in a conventional configuration for comparison. For elemental metals, nanorod structuring occurs for films with melting points higher than that of Al (933 K) when grown at room temperature with a rotation rate of {approx}5 rpm, corresponding to a value of {Theta}{sub T}{approx_equal}0.33{+-}0.01. For the oxide films, a value of {Theta}{sub T}{approx_equal}0.5 was found, above which GLAD nanorod structuring does not occur. The existence of a nanostructuring temperature threshold in both metal and oxide GLAD films can be attributed to greater adatom mobilities as temperature is increased resulting in nonkinetically limited film nucleation and growth processes.

  15. Interplay of threshold resummation and hadron mass corrections in deep inelastic processes

    SciTech Connect (OSTI)

    Accardi, Alberto; Anderle, Daniele P.; Ringer, Felix

    2015-02-01

    We discuss hadron mass corrections and threshold resummation for deep-inelastic scattering lN-->l'X and semi-inclusive annihilation e+e- → hX processes, and provide a prescription how to consistently combine these two corrections respecting all kinematic thresholds. We find an interesting interplay between threshold resummation and target mass corrections for deep-inelastic scattering at large values of Bjorken xB. In semi-inclusive annihilation, on the contrary, the two considered corrections are relevant in different kinematic regions and do not affect each other. A detailed analysis is nonetheless of interest in the light of recent high precision data from BaBar and Belle on pion and kaon production, with which we compare our calculations. For both deep inelastic scattering and single inclusive annihilation, the size of the combined corrections compared to the precision of world data is shown to be large. Therefore, we conclude that these theoretical corrections are relevant for global QCD fits in order to extract precise parton distributions at large Bjorken xB, and fragmentation functions over the whole kinematic range.

  16. Interplay of threshold resummation and hadron mass corrections in deep inelastic processes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Accardi, Alberto; Anderle, Daniele P.; Ringer, Felix

    2015-02-01

    We discuss hadron mass corrections and threshold resummation for deep-inelastic scattering lN-->l'X and semi-inclusive annihilation e+e- → hX processes, and provide a prescription how to consistently combine these two corrections respecting all kinematic thresholds. We find an interesting interplay between threshold resummation and target mass corrections for deep-inelastic scattering at large values of Bjorken xB. In semi-inclusive annihilation, on the contrary, the two considered corrections are relevant in different kinematic regions and do not affect each other. A detailed analysis is nonetheless of interest in the light of recent high precision data from BaBar and Belle on pion and kaonmore » production, with which we compare our calculations. For both deep inelastic scattering and single inclusive annihilation, the size of the combined corrections compared to the precision of world data is shown to be large. Therefore, we conclude that these theoretical corrections are relevant for global QCD fits in order to extract precise parton distributions at large Bjorken xB, and fragmentation functions over the whole kinematic range.« less

  17. A Low-threshold Analysis of CDMS Shallow-site Data

    SciTech Connect (OSTI)

    Akerib, D.S.; Attisha, M.J.; Baudis, L.; Bauer, D.A.; Bolozdynya, A.I.; Brink, P.L.; Bunker, R.; Cabrera, B.; Caldwell, D.O.; Chang, C.L.; Clarke, R.M.; Cooley, J.; Crisler, M.B.; Cushman, P.; DeJongh, F.; Dixon, R.; Driscoll, D.D.; Filippini, J.; Funkhouser, S.; Gaitskell, R.J.; Golwala, S.R.; /Caltech /Fermilab /Fermilab /Colorado U., Denver /Case Western Reserve U. /Texas A-M /Minnesota U. /UC, Berkeley /UC, Berkeley /Caltech /Stanford U., Phys. Dept. /UC, Santa Barbara /Stanford U., Phys. Dept. /Minnesota U. /Queen's U., Kingston /Minnesota U. /St. Olaf Coll. /Florida U. /LBL, Berkeley /UC, Berkeley /Texas A-M /UC, Santa Barbara /Syracuse U. /UC, Berkeley /Princeton U. /Case Western Reserve U. /Stanford U., Phys. Dept. /UC, Santa Barbara /Fermilab /Santa Clara U.

    2012-06-04

    Data taken during the final shallow-site run of the first tower of the Cryogenic Dark Matter Search (CDMS II) detectors have been reanalyzed with improved sensitivity to small energy depositions. Four {approx}224 g germanium and two {approx}105 g silicon detectors were operated at the Stanford Underground Facility (SUF) between December 2001 and June 2002, yielding 118 live days of raw exposure. Three of the germanium and both silicon detectors were analyzed with a new low-threshold technique, making it possible to lower the germanium and silicon analysis thresholds down to the actual trigger thresholds of {approx}1 and {approx}2 keV, respectively. Limits on the spin-independent cross section for weakly interacting massive particles (WIMPs) to elastically scatter from nuclei based on these data exclude interesting parameter space for WIMPs with masses below 9 GeV/c{sup 2}. Under standard halo assumptions, these data partially exclude parameter space favored by interpretations of the DAMA/LIBRA and CoGeNT experiments data as WIMP signals, and exclude new parameter space for WIMP masses between 3 and 4 GeV/c{sup 2}.

  18. Nanomanufacturing : nano-structured materials made layer-by-layer.

    SciTech Connect (OSTI)

    Cox, James V.; Cheng, Shengfeng; Grest, Gary Stephen; Tjiptowidjojo, Kristianto; Reedy, Earl David, Jr.; Fan, Hongyou; Schunk, Peter Randall; Chandross, Michael Evan; Roberts, Scott A.

    2011-10-01

    Large-scale, high-throughput production of nano-structured materials (i.e. nanomanufacturing) is a strategic area in manufacturing, with markets projected to exceed $1T by 2015. Nanomanufacturing is still in its infancy; process/product developments are costly and only touch on potential opportunities enabled by growing nanoscience discoveries. The greatest promise for high-volume manufacturing lies in age-old coating and imprinting operations. For materials with tailored nm-scale structure, imprinting/embossing must be achieved at high speeds (roll-to-roll) and/or over large areas (batch operation) with feature sizes less than 100 nm. Dispersion coatings with nanoparticles can also tailor structure through self- or directed-assembly. Layering films structured with these processes have tremendous potential for efficient manufacturing of microelectronics, photovoltaics and other topical nano-structured devices. This project is designed to perform the requisite R and D to bring Sandia's technology base in computational mechanics to bear on this scale-up problem. Project focus is enforced by addressing a promising imprinting process currently being commercialized.

  19. Solar collector with blackened layer facing insulation

    SciTech Connect (OSTI)

    Brugger, R.

    1981-05-12

    A solar collector has a surface turned toward the sun and forms a heat exchange cell which has at least one wall composed of sheet aluminum. A tramsmitting layer of such a wall or the absorption layer thereof is a black layer of aluminum oxide containing Ag or Sn and formed unitarily on the aluminum sheet, e.g. By a chemical or electrochemical process.

  20. Size distributions of boundary-layer clouds

    SciTech Connect (OSTI)

    Stull, R.; Berg, L.; Modzelewski, H.

    1996-04-01

    Scattered fair-weather clouds are triggered by thermals rising from the surface layer. Not all surface layer air is buoyant enough to rise. Also, each thermal has different humidities and temperatures, resulting in interthermal variability of their lifting condensation levels (LCL). For each air parcel in the surface layer, it`s virtual potential temperature and it`s LCL height can be computed.

  1. Superconductive articles including cerium oxide layer

    DOE Patents [OSTI]

    Wu, Xin D.; Muenchausen, Ross E.

    1993-01-01

    A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.

  2. Manganese containing layer for magnetic recording media

    DOE Patents [OSTI]

    Lambeth, David N.; Lee, Li-Lien; Laughlin, David E.

    1999-01-01

    The present invention provides for a magnetic recording media incorporating Mn-containing layers between a substrate and a magnetic layer to provide media having increased coercivity and lower noise. The Mn-containing layer can be incorporated in a rotating, translating or stationary recording media to operate in conjunction with magnetic transducing heads for recording and reading of magnetic data, as well as other applications. The magnetic recording medium of the invention preferably includes a Co or Co alloy film magnetic layer, and Mn-containing layer, preferably comprised of VMn, TiMn, MnZn, CrMnMo, CrMnW, CrMnV, and CrMnTi, and most preferably a CrMn alloy, disposed between the substrate and the magnetic layer to promote an epitaxial crystalline structure in the magnetic layer. The medium can further include seed layers, preferably polycrystalline MgO for longitudinal media, underlayers, and intermediate layers. Underlayers and intermediate layers are comprised of materials having either an A2 structure or a B2-ordered crystalline structure disposed between the seed layer and the magnetic layer. Materials having an A2 structure are preferably Cr or Cr alloys, such as CrV, CrMo, CrW and CrTi. Materials having a B2-ordered structure having a lattice constant that is substantially comparable to that of Cr, such as those preferably selected from the group consisting of NiAl, AILCo, FeAl, FeTi, CoFe, CoTi, CoHf, CoZr, NiTi, CuBe, CuZn, A-LMn, AlRe, AgMg, and Al.sub.2 FeMn.sub.2, and is most preferably FeAl or NiAl.

  3. Multi-layer seal for electrochemical devices

    DOE Patents [OSTI]

    Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

    2010-09-14

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  4. Multi-layer seal for electrochemical devices

    DOE Patents [OSTI]

    Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

    2010-11-16

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  5. Method to fabricate layered material compositions

    DOE Patents [OSTI]

    Fleming, James G.; Lin, Shawn-Yu

    2002-01-01

    A new class of processes suited to the fabrication of layered material compositions is disclosed. Layered material compositions are typically three-dimensional structures which can be decomposed into a stack of structured layers. The best known examples are the photonic lattices. The present invention combines the characteristic features of photolithography and chemical-mechanical polishing to permit the direct and facile fabrication of, e.g., photonic lattices having photonic bandgaps in the 0.1-20.mu. spectral range.

  6. Method to fabricate layered material compositions

    DOE Patents [OSTI]

    Fleming, James G.; Lin, Shawn-Yu

    2004-11-02

    A new class of processes suited to the fabrication of layered material compositions is disclosed. Layered material compositions are typically three-dimensional structures which can be decomposed into a stack of structured layers. The best known examples are the photonic lattices. The present invention combines the characteristic features of photolithography and chemical-mechanical polishing to permit the direct and facile fabrication of, e.g., photonic lattices having photonic bandgaps in the 0.1-20.mu. spectral range.

  7. Higgs boson gluon-fusion production beyond threshold in N3LO QCD

    SciTech Connect (OSTI)

    Anastasiou, Charalampos; Duhr, Claude; Dulat, Falko; Furlan, Elisabetta; Gehrmann, Thomas; Herzog, Franz; Mistlberger, Bernhard

    2015-03-18

    In this study, we compute the gluon fusion Higgs boson cross-section at N3LO through the second term in the threshold expansion. This calculation constitutes a major milestone towards the full N3LO cross section. Our result has the best formal accuracy in the threshold expansion currently available, and includes contributions from collinear regions besides subleading corrections from soft and hard regions, as well as certain logarithmically enhanced contributions for general kinematics. We use our results to perform a critical appraisal of the validity of the threshold approximation at N3LO in perturbative QCD.

  8. Sodium-layer laser guide stars

    SciTech Connect (OSTI)

    Friedman, H.W.

    1993-08-03

    The requirements and design of a laser system to generate a sodium- layer beacon is presented. Early results of photometry and wavefront sensing are given.

  9. Enhanced Densification of SDC Barrier Layers

    SciTech Connect (OSTI)

    Hardy, John S.; Templeton, Jared W.; Lu, Zigui; Stevenson, Jeffry W.

    2011-09-12

    This technical report explores the Enhanced Densification of SCD Barrier Layers A samaria-doped ceria (SDC) barrier layer separates the lanthanum strontium cobalt ferrite (LSCF) cathode from the yttria-stabilized zirconia (YSZ) electrolyte in a solid oxide fuel cell (SOFC) to prevent the formation of electrically resistive interfacial SrZrO{sub 3} layers that arise from the reaction of Sr from the LSCF with Zr from the YSZ. However, the sintering temperature of this SDC layer must be limited to {approx}1200 C to avoid extensive interdiffusion between SDC and YSZ to form a resistive CeO{sub 2}-ZrO{sub 2} solid solution. Therefore, the conventional SDC layer is often porous and therefore not as impervious to Sr-diffusion as would be desired. In the pursuit of improved SOFC performance, efforts have been directed toward increasing the density of the SDC barrier layer without increasing the sintering temperature. The density of the SDC barrier layer can be greatly increased through small amounts of Cu-doping of the SDC powder together with increased solids loading and use of an appropriate binder system in the screen print ink. However, the resulting performance of cells with these barrier layers did not exhibit the expected increase in accordance with that achieved with the prototypical PLD SDC layer. It was determined by XRD that increased sinterability of the SDC also results in increased interdiffusivity between the SDC and YSZ, resulting in formation of a highly resistive solid solution.

  10. Organic photovoltaic cells utilizing ultrathin sensitizing layer

    DOE Patents [OSTI]

    Forrest, Stephen R.; Yang, Fan; Rand, Barry P.

    2011-09-06

    A photosensitive device includes a plurality of organic photoconductive materials disposed in a stack between a first electrode and a second electrode, including a first continuous layer of donor host material, a second continuous layer of acceptor host material, and at least one other organic photoconductive material disposed as a plurality of discontinuous islands between the first continuous layer and the second continuous layer. Each of these other photoconductive materials has an absorption spectra different from the donor host material and the acceptor host material. Preferably, each of the discontinuous islands consists essentially of a crystallite of the respective organic photoconductive material, and more preferably, the crystallites are nanocrystals.

  11. Modeling the summertime Arctic cloudy boundary layer

    SciTech Connect (OSTI)

    Curry, J.A.; Pinto, J.O.; McInnes, K.L.

    1996-04-01

    Global climate models have particular difficulty in simulating the low-level clouds during the Arctic summer. Model problems are exacerbated in the polar regions by the complicated vertical structure of the Arctic boundary layer. The presence of multiple cloud layers, a humidity inversion above cloud top, and vertical fluxes in the cloud that are decoupled from the surface fluxes, identified in Curry et al. (1988), suggest that models containing sophisticated physical parameterizations would be required to accurately model this region. Accurate modeling of the vertical structure of multiple cloud layers in climate models is important for determination of the surface radiative fluxes. This study focuses on the problem of modeling the layered structure of the Arctic summertime boundary-layer clouds and in particular, the representation of the more complex boundary layer type consisting of a stable foggy surface layer surmounted by a cloud-topped mixed layer. A hierarchical modeling/diagnosis approach is used. A case study from the summertime Arctic Stratus Experiment is examined. A high-resolution, one-dimensional model of turbulence and radiation is tested against the observations and is then used in sensitivity studies to infer the optimal conditions for maintaining two separate layers in the Arctic summertime boundary layer. A three-dimensional mesoscale atmospheric model is then used to simulate the interaction of this cloud deck with the large-scale atmospheric dynamics. An assessment of the improvements needed to the parameterizations of the boundary layer, cloud microphysics, and radiation in the 3-D model is made.

  12. Wavelength dependence of femtosecond laser-induced damage threshold of optical materials

    SciTech Connect (OSTI)

    Gallais, L. Douti, D.-B.; Commandré, M.; Batavičiūtė, G.; Pupka, E.; Ščiuka, M.; Smalakys, L.; Sirutkaitis, V.; Melninkaitis, A.

    2015-06-14

    An experimental and numerical study of the laser-induced damage of the surface of optical material in the femtosecond regime is presented. The objective of this work is to investigate the different processes involved as a function of the ratio of photon to bandgap energies and compare the results to models based on nonlinear ionization processes. Experimentally, the laser-induced damage threshold of optical materials has been studied in a range of wavelengths from 1030 nm (1.2 eV) to 310 nm (4 eV) with pulse durations of 100 fs with the use of an optical parametric amplifier system. Semi-conductors and dielectrics materials, in bulk or thin film forms, in a range of bandgap from 1 to 10 eV have been tested in order to investigate the scaling of the femtosecond laser damage threshold with the bandgap and photon energy. A model based on the Keldysh photo-ionization theory and the description of impact ionization by a multiple-rate-equation system is used to explain the dependence of laser-breakdown with the photon energy. The calculated damage fluence threshold is found to be consistent with experimental results. From these results, the relative importance of the ionization processes can be derived depending on material properties and irradiation conditions. Moreover, the observed damage morphologies can be described within the framework of the model by taking into account the dynamics of energy deposition with one dimensional propagation simulations in the excited material and thermodynamical considerations.

  13. Searching for low-lying multi-particle thresholds in lattice spectroscopy

    SciTech Connect (OSTI)

    Mahbub, M. Selim; CSIRO Computational Informatics, College Road, Sandy Bay, TAS 7005 ; Kamleh, Waseem; Leinweber, Derek B.; Williams, Anthony G.

    2014-03-15

    We explore the Euclidean-time tails of odd-parity nucleon correlation functions in a search for the S-wave pion–nucleon scattering-state threshold contribution. The analysis is performed using 2+1 flavor 32{sup 3}×64 PACS-CS gauge configurations available via the ILDG. Correlation matrices composed with various levels of fermion source/sink smearing are used to project low-lying states. The consideration of 25,600 fermion propagators reveals the presence of more than one state in what would normally be regarded as an eigenstate-projected correlation function. This observation is in accord with the scenario where the eigenstates contain a strong mixing of single and multi-particle states but only the single particle component has a strong coupling to the interpolating field. Employing a two-exponential fit to the eigenvector-projected correlation function, we are able to confirm the presence of two eigenstates. The lower-lying eigenstate is consistent with a Nπ scattering threshold and has a relatively small coupling to the three-quark interpolating field. We discuss the impact of this small scattering-state contamination in the eigenvector projected correlation function on previous results presented in the literature. -- Highlights: • Correlation-matrix projected correlators reveal more than one state contributing. • Results are associated with strong mixing of single and multi-particle states in QCD. • A two-exponential fit confirms the presence of two QCD eigenstates. •The lower-lying eigenstate is consistent with a nucleon–pion scattering threshold. •The impact of this small contamination on the higher-lying state is examined.

  14. Identification of the stimulated-emission threshold in high-{beta} nanoscale lasers through phase-space reconstruction

    SciTech Connect (OSTI)

    Hachair, X.; Elvira, D.; Le Gratiet, L.; Lemaitre, A.; Abram, I.; Sagnes, I.; Robert-Philip, I.; Beveratos, A.; Braive, R.; Lippi, G. L.

    2011-05-15

    Nanoscale lasers sustain a few optical modes so that the fraction of spontaneous emission {beta} funnelled into the useful (lasing) mode is high (of the order of 10{sup -1}) and the threshold, which traditionally corresponds to an abrupt kink in the light-in-light-out curve, becomes ill defined. We propose an alternative definition of the threshold that is based on the dynamical response of the laser and is valid even for {beta}=1 lasers. The laser dynamics is analyzed through a reconstruction of its phase-space trajectory for pulsed excitations. Crossing the threshold, brings about a change in the shape of the trajectory and in the area contained in it. An unambiguous determination of the threshold in terms of this change is shown theoretically and illustrated experimentally in a photonic-crystal laser.

  15. Exploration of below threshold Z{sup {prime}} mass and coupling determinations at the NLC

    SciTech Connect (OSTI)

    Rizzo, T.G.

    1997-05-01

    We examine of the capability of the Next Linear Collider to determine the mass as well as the couplings to leptons and b quarks of a new neutral gauge boson Z{sup {prime}} below direct production threshold. By using simulated data collected at several different values of {radical}(s), we demonstrate how this can be done in a model-independent manner via an anonymous case approach. The importance of beam polarization to the success of this program is discussed. The procedure is shown to be easily extended to the case of top and charm quark couplings. {copyright} {ital 1997} {ital The American Physical Society}

  16. Spin-lasers: From threshold reduction to large-signal analysis

    SciTech Connect (OSTI)

    Lee, Jeongsu; Bearden, Sean; Wasner, Evan; Žutić, Igor

    2014-07-28

    Lasers in which spin-polarized carriers are injected provide paths to different practical room temperature spintronic devices, not limited to magnetoresistive effects. Unlike the conventional understanding of spintronic devices, an optimal performance of such spin-lasers can arise for finite, not infinite, spin relaxation time. By considering spin-relaxation times of both electrons and holes, we elucidate advantages of spin-lasers over their conventional (spin-unpolarized) counterparts. In addition to the steady-state threshold reduction, spin-lasers can improve transient operation leading to shorter turn-on delay times, reduced ringing of emitted light, and an enhanced bandwidth.

  17. Self-Sputtering Far above the Runaway Threshold: An Extraordinary Metal-Ion Generator

    SciTech Connect (OSTI)

    Andersson, Joakim; Anders, Andre

    2009-01-30

    When self-sputtering is driven far above the runaway threshold voltage, energetic electrons are made available to produce 'excess plasma' far from the magnetron target. Ionization balance considerations show that the secondary electrons deliver the necessary energy to the 'remote' zone. Thereby, such a system can be an extraordinarily prolific generator of usable metal ions. Contrary to other known sources, the ion current to a substrate can exceed the discharge current. For gasless self-sputtering of copper, the usable ion current scales exponentially with the discharge voltage.

  18. Self-sputtering far above the runaway threshold: an extraordinary metal ion generator

    SciTech Connect (OSTI)

    Andersson, Joakim; Anders, Andre

    2008-12-16

    When self-sputtering is driven far above the runaway threshold voltage, energetic electrons are made available to produce"excess plasma" far from the magnetron target. Ionization balance considerations show that the secondary electrons deliver the necessary energy to the"remote" zone. Thereby, such a system can be an extraordinarily prolific generator of useable metal ions. Contrary to other known sources, the ion current to a substrate can exceed the discharge current. For gasless self-sputtering of copper, the useable ion current scales exponentially with the discharge voltage.

  19. QCD CORRECTIONS TO DILEPTON PRODUCTION NEAR PARTONIC THRESHOLD IN PP SCATTERING.

    SciTech Connect (OSTI)

    SHIMIZU, H.; STERMAN, G.; VOGELSANG, W.; YOKOYA, H.

    2005-10-02

    We present a recent study of the QCD corrections to dilepton production near partonic threshold in transversely polarized {bar p}p scattering, We analyze the role of the higher-order perturbative QCD corrections in terms of the available fixed-order contributions as well as of all-order soft-gluon resummations for the kinematical regime of proposed experiments at GSI-FAIR. We find that perturbative corrections are large for both unpolarized and polarized cross sections, but that the spin asymmetries are stable. The role of the far infrared region of the momentum integral in the resummed exponent and the effect of the NNLL resummation are briefly discussed.

  20. Lower and upper estimates on the excitation threshold for breathers in discrete nonlinear Schroedinger lattices

    SciTech Connect (OSTI)

    Cuevas, J.; Palmero, F.

    2009-11-15

    We propose analytical lower and upper estimates on the excitation threshold for breathers (in the form of spatially localized and time periodic solutions) in discrete nonlinear Schroedinger (DNLS) lattices with power nonlinearity. The estimation, depending explicitly on the lattice parameters, is derived by a combination of a comparison argument on appropriate lower bounds depending on the frequency of each solution with a simple and justified heuristic argument. The numerical studies verify that the analytical estimates can be of particular usefulness, as a simple analytical detection of the activation energy for breathers in DNLS lattices.

  1. Crystalline perfection, birefringence and laser damage threshold properties of piperidinium p-hydroxybenzoate

    SciTech Connect (OSTI)

    Sudhahar, S.; Zahid, I. MD; Kumar, M. Krishna; Kumar, R. Mohan

    2015-06-24

    Piperidinium p-hydroxybenzoate (PPHB) crystal was grown by slow evaporation method. Single crystal X-ray diffraction studies confirm that PPHB crystallizes in monoclinic crystal system with noncentrosymmetric space group Cc. The crystalline perfection of the grown crystal was evaluated by using high resolution X-ray diffractometry. UV-Visible transmission and birefringence studies were employed on the grown PPHB crystal. The laser induced damage threshold value was estimated using Nd:YAG laser. Thermal behavior of PPHB crystal has been investigated by TG-DTA analyses. Etching studies have been performed to assess the growth pattern of PPHB crystal.

  2. Cyclone separator having boundary layer turbulence control

    DOE Patents [OSTI]

    Krishna, Coimbatore R.; Milau, Julius S.

    1985-01-01

    A cyclone separator including boundary layer turbulence control that is operable to prevent undue build-up of particulate material at selected critical areas on the separator walls, by selectively varying the fluid pressure at those areas to maintain the momentum of the vortex, thereby preventing particulate material from inducing turbulence in the boundary layer of the vortical fluid flow through the separator.

  3. Atomic Layer Deposition | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition New nanophase thin film materials with properties tailored to specifically meet the needs of industry New software simulates ALD over multiple length scale, saving industry time and money on developing specialized tools PDF icon Atomic_Layer_Deposition

  4. Epitaxial growth of silicon for layer transfer

    DOE Patents [OSTI]

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  5. Instability limits for spontaneous double layer formation

    SciTech Connect (OSTI)

    Carr, J. Jr.; Department of Physics, Texas Lutheran University, Seguin, Texas 78155 ; Galante, M. E.; McCarren, D.; Scime, E. E.; Sears, S.; VanDervort, R. W.; Magee, R. M.; TriAlpha Energy, Inc., Foothill Ranch, California 92610 ; Reynolds, E.

    2013-11-15

    We present time-resolved measurements that demonstrate that large amplitude electrostatic instabilities appear in pulsed, expanding helicon plasmas at the same time as particularly strong double layers appear in the expansion region. A significant cross-correlation between the electrostatic fluctuations and fluctuations in the number of ions accelerated by the double layer electric field is observed. No correlation is observed between the electrostatic fluctuations and ions that have not passed through the double layer. These measurements confirm that the simultaneous appearance of the electrostatic fluctuations and the double layer is not simple coincidence. In fact, the accelerated ion population is responsible for the growth of the instability. The double layer strength, and therefore, the velocity of the accelerated ions, is limited by the appearance of the electrostatic instability.

  6. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOE Patents [OSTI]

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  7. Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition

    DOE Patents [OSTI]

    Cho, Jung Young; Ahn, Dongjoon; Salvador, James R.; Meisner, Gregory P.

    2016-06-07

    A thermoelectric material includes a substrate particle and a plurality of conformal oxide layers formed on the substrate particle. The plurality of conformal oxide layers has a total oxide layer thickness ranging from about 2 nm to about 20 nm. The thermoelectric material excludes oxide nanoparticles. A method of making the thermoelectric material is also disclosed herein.

  8. Blister Threshold Based Thermal Limits for the U-Mo Monolithic Fuel System

    SciTech Connect (OSTI)

    D. M. Wachs; I. Glagolenko; F. J. Rice; A. B. Robinson; B. H. Rabin; M. K. Meyer

    2012-10-01

    Fuel failure is most commonly induced in research and test reactor fuel elements by exposure to an under-cooled or over-power condition that results in the fuel temperature exceeding a critical threshold above which blisters form on the plate. These conditions can be triggered by normal operational transients (i.e. temperature overshoots that may occur during reactor startup or power shifts) or mild upset events (e.g., pump coastdown, small blockages, mis-loading of fuel elements into higher-than-planned power positions, etc.). The rise in temperature has a number of general impacts on the state of a fuel plate that include, for example, stress relaxation in the cladding (due to differential thermal expansion), softening of the cladding, increased mobility of fission gases, and increased fission-gas pressure in pores, all of which can encourage the formation of blisters on the fuel-plate surface. These blisters consist of raised regions on the surface of fuel plates that occur when the cladding plastically deforms in response to fission-gas pressure in large pores in the fuel meat and/or mechanical buckling of the cladding over damaged regions in the fuel meat. The blister temperature threshold decreases with irradiation because the mechanical properties of the fuel plate degrade while under irradiation (due to irradiation damage and fission-product accumulation) and because the fission-gas inventory progressively increases (and, thus, so does the gas pressure in pores).

  9. L to H mode transition: Parametric dependencies of the temperature threshold

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bourdelle, C.; Chone, L.; Fedorczak, N.; Garbet, Xavier; Beyer, P.; Citrin, J.; Fuhr, G.; Loarte, A.; Maggi, C. F.; Militello, F.; et al

    2015-06-15

    The L to H mode transition occurs at a critical power which depends on various parameters, such as the magnetic field, the density, etc. Experimental evidence on various tokamaks (JET, ASDEX-Upgrade, DIII-D, Alcator C-Mod) points towards the existence of a critical temperature characterizing the transition. This criterion for the L-H transition is local and is therefore easier to be compared to theoretical approaches. In order to shed light on the mechanisms of the transition, simple theoretical ideas are used to derive a temperature threshold (Tth). They are based on the stabilization of the underlying turbulence by a mean radial electricmore » field shear. The nature of the turbulence varies as the collisionality decreases, from resistive ballooning modes to ion temperature gradient and trapped electron modes. The obtained parametric dependencies of the derived Tth are tested versus magnetic field, density, effective charge. Furthermore, various robust experimental observations are reproduced, in particular Tth increases with magnetic field B and increases with density below the density roll-over observed on the power threshold.« less

  10. ZnO-PVA nanocomposite films for low threshold optical limiting applications

    SciTech Connect (OSTI)

    Viswanath, Varsha; Beenakumari, C.; Muneera, C. I.

    2014-10-15

    Zinc oxide-PVA nanocomposite films were fabricated adopting a simple method based on solution-casting, incorporating small weight percentages (<1.2 wt%) of ZnO in PVA (∼0.625×10{sup −3}M to 7×10{sup −3}M), and their structure, morphology, linear and low threshold nonlinear optical properties were investigated. The films were characterized as nanostructured ZnO encapsulated between the molecules/chains of the semicrystalline host polymer PVA. The samples exhibited low threshold nonlinear absorption and negative nonlinear refraction, as studied using the Z-scan technique. A switchover from SA to RSA was observed as the concentration of ZnO was increased. The optical limiting of 632.8 nm CW laser light displayed by these nanocomposite films is also demonstrated. The estimated values of the effective coefficients of nonlinear absorption, nonlinear refraction and third-order nonlinear susceptibility, |χ{sup (3)}|, compared to those reported for continuous wave laser light excitation, measure up to the highest among them. The results show that the ZnO-PVA nanocomposite films have great potential applications in future optical and photonic devices.

  11. Reaction {pi}N {yields} {pi}{pi}N near threshold

    SciTech Connect (OSTI)

    Frlez, E.

    1993-11-01

    The LAMPF E1179 experiment used the {pi}{sup 0} spectrometer and an array of charged particle range counters to detect and record {pi}{sup +}{pi}{sup 0}, {pi}{sup 0}p, and {pi}{sup +}{pi}{sup 0}p coincidences following the reaction {pi}{sup +}p {yields} {pi}{sup 0}{pi}{sup +}p near threshold. The total cross sections for single pion production were measured at the incident pion kinetic energies 190, 200, 220, 240, and 260 MeV. Absolute normalizations were fixed by measuring {pi}{sup +}p elastic scattering at 260 MeV. A detailed analysis of the {pi}{sup 0} detection efficiency was performed using cosmic ray calibrations and pion single charge exchange measurements with a 30 MeV {pi}{sup {minus}} beam. All published data on {pi}N {yields} {pi}{pi}N, including our results, are simultaneously fitted to yield a common chiral symmetry breaking parameter {xi} ={minus}0.25{plus_minus}0.10. The threshold matrix element {vert_bar}{alpha}{sub 0}({pi}{sup 0}{pi}{sup +}p){vert_bar} determined by linear extrapolation yields the value of the s-wave isospin-2 {pi}{pi} scattering length {alpha}{sub 0}{sup 2}({pi}{pi}) = {minus}0.041{plus_minus}0.003 m{sub {pi}}{sup {minus}1}, within the framework of soft-pion theory.

  12. Direct Measurement of the Bubble Nucleation Energy Threshold in a CF3I Bubble Chamber

    SciTech Connect (OSTI)

    Behnke, E.; Benjamin, T.; Brice, S. J.; Broemmelsiek, D.; Collar, J. I.; Cooper, P. S.; Crisler, M.; Dahl, C. E.; Fustin, D.; Hall, Jeter C.; Harnish, C.; Levine, I.; Lippincott, W. H.; Moan, T.; Nania, T.; Neilson, R.; Ramberg, E.; Robinson, A. E.; Ruschman, M.; Sonnenschein, Andrew; Vazquez-Jauregui, E.; RIvera, R. A.; Uplegger, L.

    2013-07-30

    Here, we measured the energy threshold and efficiency for bubble nucleation from iodine recoils in a CF3I bubble chamber in the energy range of interest for a dark matter search. These interactions cannot be probed by standard neutron calibration methods, so we develop a new technique by observing the elastic scattering of 12 GeV/c negative pions. The pions are tracked with a silicon pixel telescope and the reconstructed scattering angle provides a measure of the nuclear recoil kinetic energy. The bubble chamber was operated with a nominal threshold of (13.6±0.6) keV. Interpretation of the results depends on the response to fluorine and carbon recoils, but in general we find agreement with the predictions of the classical bubble-nucleation theory. Moreover, this measurement confirms the applicability of CF3I as a target for spin-independent dark matter interactions and represents a novel technique for calibration of superheated fluid detectors.

  13. Precision Measurement of the Spin-dependent Asymmetry in the Threshold Region of Quasielastic 3He

    SciTech Connect (OSTI)

    Feng Xiong

    2002-09-01

    The first precision measurement of the spin-dependent asymmetry in the threshold region of polarized {sup 3}He(polarized e, e') was carried out in Hall A at the Jefferson Laboratory, using a longitudinally polarized continuous electron beam incident on a high-pressure polarized {sup 3}He gas target. The polarized electron beam was generated by illuminating a strained GaAs cathode with high intensity circularly polarized laser light, and an average beam polarization of about 70% was achieved. The {sup 3}He target was polarized based on the principle of spin-exchange optical pumpint and the average target polarization was about 30%. The scattered electrons were detected in the two Hall A high resolution spectrometers, HRSe and HRSh. The data from HRSh were used for this analysis and covered both the elastic peak and the threshold region. Two kinematic points were measured in the threshold region, one with a central Q{sup 2}-value of 0.1 (GeV/c){sup 2} at an incident beam energy E{sub 0} = 0.778 GeV and the other with a central Q{sup 2}-value of 0.2 (GeV/c){sup 2} at E-0 = 1.727 GeV. The average beam current was 10 mu-A, which was mainly due to the limitation of the polarized {sup 3}He target. The measured asymmetry was compared with both plane wave impulse approximation (PWIA) calculations and non-relativistic full Faddeev calculations which include both final-state interactions (FSIs) and meson-exchange currents (MECs) effects. The poor description of the data by PWIA calculations at both Q{sup 2}-values suggests the existence of strong FSI and MEC effects in the threshold region of polarized {sup 3}He (polarized e, e'). Indeed, the agreement between the data and full calculations is very good at Q{sup 2} = 0.1 (GeV/c){sup 2}. On the other hand, a small discrepancy at Q{sup 2} = 0.2 (GeV/c){sup 2} is observed, which might be due to some Q{sup 2} -dependent effects such as relativity and three-nucleon forces (3NFs), which are not included in the framework of non

  14. Method for forming a barrier layer

    DOE Patents [OSTI]

    Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palo Alto, CA)

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  15. Superconductive articles including cerium oxide layer

    DOE Patents [OSTI]

    Wu, X.D.; Muenchausen, R.E.

    1993-11-16

    A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure. 7 figures.

  16. Strained layer Fabry-Perot device

    DOE Patents [OSTI]

    Brennan, Thomas M.; Fritz, Ian J.; Hammons, Burrell E.

    1994-01-01

    An asymmetric Fabry-Perot reflectance modulator (AFPM) consists of an active region between top and bottom mirrors, the bottom mirror being affixed to a substrate by a buffer layer. The active region comprises a strained-layer region having a bandgap and thickness chosen for resonance at the Fabry-Perot frequency. The mirrors are lattice matched to the active region, and the buffer layer is lattice matched to the mirror at the interface. The device operates at wavelengths of commercially available semiconductor lasers.

  17. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    SciTech Connect (OSTI)

    Wu, Tian-Li Groeseneken, Guido; Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan; Bakeroot, Benoit; Roelofs, Robin

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  18. Cryogenic target system for hydrogen layering

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parham, T.; Kozioziemski, B.; Atkinson, D.; Baisden, P.; Bertolini, L.; Boehm, K; Chernov, A.; Coffee, K.; Coffield, F.; Dylla-Spears, R.; et al

    2015-11-24

    Here, a cryogenic target positioning system was designed and installed on the National Ignition Facility (NIF) target chamber. This instrument incorporates the ability to fill, form, and characterize the NIF targets with hydrogen isotopes needed for ignition experiments inside the NIF target bay then transport and position them in the target chamber. This effort brought to fruition years of research in growing and metrologizing high-quality hydrogen fuel layers and landed it in an especially demanding operations environment in the NIF facility. D-T (deuterium-tritium) layers for NIF ignition experiments have extremely tight specifications and must be grown in a very highlymore » constrained environment: a NIF ignition target inside a cryogenic target positioner inside the NIF target bay. Exquisite control of temperature, pressure, contaminant level, and thermal uniformity are necessary throughout seed formation and layer growth to create an essentially-groove-free single crystal layer.« less

  19. Layered solid sorbents for carbon dioxide capture

    DOE Patents [OSTI]

    Li, Bingyun; Jiang, Bingbing; Gray, McMahan L; Fauth, Daniel J; Pennline, Henry W; Richards, George A

    2014-11-18

    A solid sorbent for the capture and the transport of carbon dioxide gas is provided having at least one first layer of a positively charged material that is polyethylenimine or poly(allylamine hydrochloride), that captures at least a portion of the gas, and at least one second layer of a negatively charged material that is polystyrenesulfonate or poly(acryclic acid), that transports the gas, wherein the second layer of material is in juxtaposition to, attached to, or crosslinked with the first layer for forming at least one bilayer, and a solid substrate support having a porous surface, wherein one or more of the bilayers is/are deposited on the surface of and/or within the solid substrate. A method of preparing and using the solid sorbent is provided.

  20. Counting molecular-beam grown graphene layers

    SciTech Connect (OSTI)

    Plaut, Annette S.; Wurstbauer, Ulrich; Pinczuk, Aron; Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 ; Garcia, Jorge M.; Pfeiffer, Loren N.

    2013-06-17

    We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

  1. Cermet layer for amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J.

    1979-01-01

    A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.

  2. Multi-layer waste containment barrier

    DOE Patents [OSTI]

    Smith, Ann Marie; Gardner, Bradley M.; Nickelson, David F.

    1999-01-01

    An apparatus for constructing an underground containment barrier for containing an in-situ portion of earth. The apparatus includes an excavating device for simultaneously (i) excavating earthen material from beside the in-situ portion of earth without removing the in-situ portion and thereby forming an open side trench defined by opposing earthen sidewalls, and (ii) excavating earthen material from beneath the in-situ portion of earth without removing the in-situ portion and thereby forming a generally horizontal underground trench beneath the in-situ portion defined by opposing earthen sidewalls. The apparatus further includes a barrier-forming device attached to the excavating device for simultaneously forming a side barrier within the open trench and a generally horizontal, multi-layer barrier within the generally horizontal trench. The multi-layer barrier includes at least a first layer and a second layer.

  3. Molecular dynamics of wetting layer formation and forced water invasion in angular nanopores with mixed wettability

    SciTech Connect (OSTI)

    Sedghi, Mohammad Piri, Mohammad; Goual, Lamia

    2014-11-21

    The depletion of conventional hydrocarbon reservoirs has prompted the oil and gas industry to search for unconventional resources such as shale gas/oil reservoirs. In shale rocks, considerable amounts of hydrocarbon reside in nanoscale pore spaces. As a result, understanding the multiphase flow of wetting and non-wetting phases in nanopores is important to improve oil and gas recovery from these formations. This study was designed to investigate the threshold capillary pressure of oil and water displacements in a capillary dominated regime inside nanoscale pores using nonequilibrium molecular dynamics (NEMD) simulations. The pores have the same cross-sectional area and volume but different cross-sectional shapes. Oil and water particles were represented with a coarse grained model and the NEMD simulations were conducted by assigning external pressure on an impermeable piston. Threshold capillary pressures were determined for the drainage process (water replaced by oil) in different pores. The molecular dynamics results are in close agreements with calculations using the Mayer-Stowe-Princen (MS-P) method which has been developed on the premise of energy balance in thermodynamic equilibrium. After the drainage simulations, a change in wall particles’ wettability from water-wet to oil-wet was implemented based on the final configuration of oil and water inside the pore. Waterflooding simulations were then carried out at the threshold capillary pressure. The results show that the oil layer formed between water in the corner and in the center of the pore is not stable and collapses as the simulation continues. This is in line with the predictions from the MS-P method.

  4. Optical devices featuring nonpolar textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  5. Optical devices featuring textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  6. Optical devices featuring textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  7. MOA-2010-BLG-311: A PLANETARY CANDIDATE BELOW THE THRESHOLD OF RELIABLE DETECTION

    SciTech Connect (OSTI)

    Yee, J. C.; Hung, L.-W.; Gould, A.; Gaudi, B. S.; Bond, I. A.; Allen, W.; Monard, L. A. G.; Albrow, M. D.; Fouque, P.; Dominik, M.; Tsapras, Y.; Udalski, A.; Zellem, R.; Christie, G. W.; DePoy, D. L.; Dong, Subo; Drummond, J.; Gorbikov, E.; Han, C. E-mail: rzellem@lpl.arizona.edu; Collaboration: muFUN Collaboration; MOA Collaboration; OGLE Collaboration; PLANET Collaboration; RoboNet Collaboration; MiNDSTEp Consortium; and others

    2013-05-20

    We analyze MOA-2010-BLG-311, a high magnification (A{sub max} > 600) microlensing event with complete data coverage over the peak, making it very sensitive to planetary signals. We fit this event with both a point lens and a two-body lens model and find that the two-body lens model is a better fit but with only {Delta}{chi}{sup 2} {approx} 80. The preferred mass ratio between the lens star and its companion is q = 10{sup -3.7{+-}0.1}, placing the candidate companion in the planetary regime. Despite the formal significance of the planet, we show that because of systematics in the data the evidence for a planetary companion to the lens is too tenuous to claim a secure detection. When combined with analyses of other high-magnification events, this event helps empirically define the threshold for reliable planet detection in high-magnification events, which remains an open question.

  8. Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding

    SciTech Connect (OSTI)

    Meng, Chao; Yu, Shao-Liang; Wang, Hong -Qing; Cao, Yue; Tong, Li -Min; Liu, Wei -Tao; Shen, Yuen -Ron

    2015-11-06

    Graphene-doped polymer nanofibers are fabricated by taper drawing of solvated polyvinyl alcohol doped with liquid-phase exfoliated graphene flakes. Nanofibers drawn this way typically have diameters measured in hundreds of nanometers and lengths in tens of millimeters; they show excellent uniformity and surface smoothness for optical waveguiding. Owing to their tightly confined waveguiding behavior, light–matter interaction in these subwavelength-diameter nanofibers is significantly enhanced. Using approximately 1350-nm-wavelength femto-second pulses, we demonstrate saturable absorption behavior in these nanofibers with a saturation threshold down to 0.25 pJ pulse-1 (peak power ~1.3 W). Additionally, using 1064-nm-wavelength nanosecond pulses as switching light, we show all-optical modulation of a 1550-nm-wavelength signal light guided along a single nanofiber with a switching peak power of ~3.2 W.

  9. Φ-Meson Photoproduction with Linearly Polarized Photons at Threshold Energies

    SciTech Connect (OSTI)

    Salamanca, Julian; Cole, Philip L

    2007-10-01

    The observables provided by linearly-polarized photons are of interest in delineating the contributions of the various hadronic processes giving rise to vector meson photoproduction. In particular, we describe how Φ-meson production affords an incisive tool for exploring the nature of the parity exchange at threshold energies, the strangeness content of proton, as well as extracting signatures for the violation of Okubo-Zweig-Iizuka observation (OZI rule). Our goal is to study the γp → Φp reaction, with Φ → K+K-, in the photon energy range of 1.7 to 2.1 GeV by using the Coherent Linear Bremsstrahlung Facility in Hall B of Jefferson Laboratory, Newport News, VA. The data were collected during the g8b run in the summer of 2005.

  10. {phi}-Meson Photoproduction with Linearly Polarized Photons at Threshold Energies

    SciTech Connect (OSTI)

    Salamanca, Julian; Cole, Philip L.

    2007-10-26

    The observables provided by linearly-polarized photons are of interest in delineating the contributions of the various hadronic processes giving rise to vector meson photoproduction. In particular, we describe how {phi}-meson production affords an incisive tool for exploring the nature of the parity exchange at threshold energies, the strangeness content of proton, as well as extracting signatures for the violation of Okubo-Zweig-Iizuka observation (OZI rule). Our goal is to study the {gamma}-vectorp{yields}{phi}p reaction, with {phi}{yields}K{sup +}K{sup -}, in the photon energy range of 1.7 to 2.1 GeV by using the Coherent Linear Bremsstrahlung Facility in Hall B of Jefferson Laboratory, Newport News, VA. The data were collected during the g8b run in the summer of 2005.

  11. Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Meng, Chao; Yu, Shao-Liang; Wang, Hong -Qing; Cao, Yue; Tong, Li -Min; Liu, Wei -Tao; Shen, Yuen -Ron

    2015-11-06

    Graphene-doped polymer nanofibers are fabricated by taper drawing of solvated polyvinyl alcohol doped with liquid-phase exfoliated graphene flakes. Nanofibers drawn this way typically have diameters measured in hundreds of nanometers and lengths in tens of millimeters; they show excellent uniformity and surface smoothness for optical waveguiding. Owing to their tightly confined waveguiding behavior, light–matter interaction in these subwavelength-diameter nanofibers is significantly enhanced. Using approximately 1350-nm-wavelength femto-second pulses, we demonstrate saturable absorption behavior in these nanofibers with a saturation threshold down to 0.25 pJ pulse-1 (peak power ~1.3 W). Additionally, using 1064-nm-wavelength nanosecond pulses as switching light, we show all-optical modulationmore » of a 1550-nm-wavelength signal light guided along a single nanofiber with a switching peak power of ~3.2 W.« less

  12. Violations of Lorentz invariance in the neutrino sector: an improved analysis of anomalous threshold constraints

    SciTech Connect (OSTI)

    Maccione, Luca; Liberati, Stefano; Mattingly, David M. E-mail: liberati@sissa.it

    2013-03-01

    Recently there has been a renewed activity in the physics of violations of Lorentz invariance in the neutrino sector. Flavor dependent Lorentz violation, which generically changes the pattern of neutrino oscillations, is extremely tightly constrained by oscillation experiments. Flavor independent Lorentz violation, which does not introduce new oscillation phenomena, is much more weakly constrained with constraints coming from time of flight and anomalous threshold analyses. We use a simplified rotationally invariant model to investigate the effects of finite baselines and energy dependent dispersion on anomalous reaction rates in long baseline experiments and show numerically that anomalous reactions do not necessarily cut off the spectrum quite as sharply as currently assumed. We also present a revised analysis of how anomalous reactions can be used to cast constraints from the observed atmospheric high energy neutrinos and the expected cosmogenic ones.

  13. Magnetic Field Control of the NO{sub 2} Photodissociation Threshold

    SciTech Connect (OSTI)

    Jost, R.; Nygard, J.; Pasinski, A.; Delon, A. [Grenoble High Magnetic Field Laboratory, MPI FKF/CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France)] [Grenoble High Magnetic Field Laboratory, MPI FKF/CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France)

    1997-04-01

    This is the first experimental observation of the control of the dissociation energy of a polyatomic molecule with an external magnetic field. We have observed by laser-induced fluorescence that the NO{sub 2} photodissociation threshold is linearly lowered by a magnetic field. This effect reaches 13.2cm{sup -1} under 14T, i.e., 2{mu}{sub B}B. This result demonstrates that all the rovibronic levels of NO{sub 2} energetically above the lowest dissociation channel are significantly coupled, without any barrier, to the lowest exit channel: NO({sup 2}{Pi}{sub 1/2},v=0,J=1/2) and O({sup 3}P{sub 2},M{sub J}=-2). This simple behavior is explained by the existence of quantum chaos within the NO{sub 2} rovibronic levels. {copyright} {ital 1997} {ital The American Physical Society}

  14. Ablation experiment and threshold calculation of titanium alloy irradiated by ultra-fast pulse laser

    SciTech Connect (OSTI)

    Zheng, Buxiang; Jiang, Gedong; Wang, Wenjun Wang, Kedian; Mei, Xuesong; State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710054

    2014-03-15

    The interaction between an ultra-fast pulse laser and a material's surface has become a research hotspot in recent years. Micromachining of titanium alloy with an ultra-fast pulse laser is a very important research direction, and it has very important theoretical significance and application value in investigating the ablation threshold of titanium alloy irradiated by ultra-fast pulse lasers. Irradiated by a picosecond pulse laser with wavelengths of 1064 nm and 532 nm, the surface morphology and feature sizes, including ablation crater width (i.e. diameter), ablation depth, ablation area, ablation volume, single pulse ablation rate, and so forth, of the titanium alloy were studied, and their ablation distributions were obtained. The experimental results show that titanium alloy irradiated by a picosecond pulse infrared laser with a 1064 nm wavelength has better ablation morphology than that of the green picosecond pulse laser with a 532 nm wavelength. The feature sizes are approximately linearly dependent on the laser pulse energy density at low energy density and the monotonic increase in laser pulse energy density. With the increase in energy density, the ablation feature sizes are increased. The rate of increase in the feature sizes slows down gradually once the energy density reaches a certain value, and gradually saturated trends occur at a relatively high energy density. Based on the linear relation between the laser pulse energy density and the crater area of the titanium alloy surface, and the Gaussian distribution of the laser intensity on the cross section, the ablation threshold of titanium alloy irradiated by an ultra-fast pulse laser was calculated to be about 0.109 J/cm{sup 2}.

  15. Observed Minimum Illuminance Threshold for Night Market Vendors in Kenya who use LED Lamps

    SciTech Connect (OSTI)

    Johnstone, Peter; Jacobson, Arne; Mills, Evan; Radecsky, Kristen

    2009-03-21

    Creation of light for work, socializing, and general illumination is a fundamental application of technology around the world. For those who lack access to electricity, an emerging and diverse range of LED based lighting products hold promise for replacing and/or augmenting their current fuel-based lighting sources that are costly and dirty. Along with analysis of environmental factors, economic models for total cost-ofownership of LED lighting products are an important tool for studying the impacts of these products as they emerge in markets of developing countries. One important metric in those models is the minimum illuminance demanded by end-users for a given task before recharging the lamp or replacing batteries. It impacts the lighting service cost per unit time if charging is done with purchased electricity, batteries, or charging services. The concept is illustrated in figure 1: LED lighting products are generally brightest immediately after the battery is charged or replaced and the illuminance degrades as the battery is discharged. When a minimum threshold level of illuminance is reached, the operational time for the battery charge cycle is over. The cost to recharge depends on the method utilized; these include charging at a shop at a fixed price per charge, charging on personal grid connections, using solar chargers, and purchasing dry cell batteries. This Research Note reports on the observed"charge-triggering" illuminance level threshold for night market vendors who use LED lighting products to provide general and task oriented illumination. All the study participants charged with AC power, either at a fixed-price charge shop or with electricity at their home.

  16. Method of depositing epitaxial layers on a substrate

    SciTech Connect (OSTI)

    Goyal, Amit

    2003-12-30

    An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

  17. Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

    SciTech Connect (OSTI)

    Bolat, S. E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B.; Ozgit-Akgun, C.; Biyikli, N.; Okyay, A. K. E-mail: aokyay@ee.bilkent.edu.tr

    2014-06-16

    We report GaN thin film transistors (TFT) with a thermal budget below 250?C. GaN thin films are grown at 200?C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3?nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3?V/decade. The entire TFT device fabrication process temperature is below 250?C, which is the lowest process temperature reported for GaN based transistors, so far.

  18. Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

    SciTech Connect (OSTI)

    Hahn, Herwig Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

    2015-06-07

    In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10{sup 13 }cm{sup –2} allowing to considerably shift the threshold voltage to more positive values.

  19. Selective layer disordering in III-nitrides with a capping layer

    DOE Patents [OSTI]

    Wierer, Jr., Jonathan J.; Allerman, Andrew A.

    2016-06-14

    Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

  20. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

    SciTech Connect (OSTI)

    Wu, Wei Cao, Yanyan; Caspar, Jonathan V.; Guo, Qijie; Johnson, Lynda K.; Mclean, Robert S.; Malajovich, Irina; Choudhury, Kaushik Roy

    2014-07-28

    We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

  1. Direct Measurements of an increased threshold for stimulated Brillouin scattering with polarization smoothing in ignition hohlraum plasmas

    SciTech Connect (OSTI)

    Froula, D; Divol, L; Berger, R L; London, R; Meezan, N; Neumayer, P; Ross, J S; Stagnito, S; Suter, L; Glenzer, S H; Strozzi, D

    2007-11-08

    We demonstrate a significant reduction of stimulated Brillouin scattering by polarization smoothing. The intensity threshold is measured to increase by a factor of 1.7 {+-} 0.2 when polarization smoothing is applied. The results were obtained in a high-temperature (T{sub 3} {approx_equal} 3 keV) hohlraum plasma where filamentation is negligible in determining the backscatter threshold. These results are explained by an analytical model relevant to ICF plasma conditions that modifies the linear gain exponent to account for polarization smoothing.

  2. Organic light emitting device having multiple separate emissive layers

    DOE Patents [OSTI]

    Forrest, Stephen R. (Ann Arbor, MI)

    2012-03-27

    An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive layer with the adjacent emissive layers, exciton formation in each layer may be improved. Devices incorporating multiple emissive layers with multiple exciton formation regions may exhibit improved performance, including internal quantum efficiencies of up to 100%.

  3. Inorganic dual-layer microporous supported membranes

    DOE Patents [OSTI]

    Brinker, C. Jeffrey; Tsai, Chung-Yi; Lu, Yungfeng

    2003-03-25

    The present invention provides for a dual-layer inorganic microporous membrane capable of molecular sieving, and methods for production of the membranes. The inorganic microporous supported membrane includes a porous substrate which supports a first inorganic porous membrane having an average pore size of less than about 25 .ANG. and a second inorganic porous membrane coating the first inorganic membrane having an average pore size of less than about 6 .ANG.. The dual-layered membrane is produced by contacting the porous substrate with a surfactant-template polymeric sol, resulting in a surfactant sol coated membrane support. The surfactant sol coated membrane support is dried, producing a surfactant-templated polymer-coated substrate which is calcined to produce an intermediate layer surfactant-templated membrane. The intermediate layer surfactant-templated membrane is then contacted with a second polymeric sol producing a polymeric sol coated substrate which is dried producing an inorganic polymeric coated substrate. The inorganic polymeric coated substrate is then calcined producing an inorganic dual-layered microporous supported membrane in accordance with the present invention.

  4. Membrane catalyst layer for fuel cells

    DOE Patents [OSTI]

    Wilson, Mahlon S.

    1993-01-01

    A gas reaction fuel cell incorporates a thin catalyst layer between a solid polymer electrolyte (SPE) membrane and a porous electrode backing. The catalyst layer is preferably less than about 10 .mu.m in thickness with a carbon supported platinum catalyst loading less than about 0.35 mgPt/cm.sup.2. The film is formed as an ink that is spread and cured on a film release blank. The cured film is then transferred to the SPE membrane and hot pressed into the surface to form a catalyst layer having a controlled thickness and catalyst distribution. Alternatively, the catalyst layer is formed by applying a Na.sup.+ form of a perfluorosulfonate ionomer directly to the membrane, drying the film at a high temperature, and then converting the film back to the protonated form of the ionomer. The layer has adequate gas permeability so that cell performance is not affected and has a density and particle distribution effective to optimize proton access to the catalyst and electronic continuity for electron flow from the half-cell reaction occurring at the catalyst.

  5. Boundary Layer Cloudiness Parameterizations Using ARM Observations

    SciTech Connect (OSTI)

    Bruce Albrecht

    2004-09-15

    This study used DOE ARM data and facilities to: (1) study macroscopic properties of continental stratus clouds at SGP and the factors controlling these properties, (2) develop a scientific basis for understanding the processes responsible for the formation of boundary layer clouds using ARM observations in conjunction with simple parametric models and LES, and (3) evaluate cumulus cloud characteristics retrieved from the MMCR operating at TWP-Nauru. In addition we have used high resolution 94 GHz observations of boundary layer clouds and precipitation to: (1) develop techniques for using high temporal resolution Doppler velocities to study large-eddy circulations and turbulence in boundary layer clouds and estimate the limitations of using current and past MMCR data for boundary layer cloud studies, (2) evaluate the capability and limitations of the current MMCR data for estimating reflectivity, vertical velocities, and spectral under low- signal-to-noise conditions associated with weak no n-precipitating clouds, (3) develop possible sampling modes for the new MMCR processors to allow for adequate sampling of boundary layer clouds, and (4) retrieve updraft and downdraft structures under precipitating conditions.

  6. ARM - Field Campaign - Lower Atmospheric Boundary Layer Experiment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Related Campaigns 2013 Lower Atmospheric Boundary Layer Experiment 2013.05.28, Turner, SGP ... Lead Scientist : David Turner For data sets, see below. Abstract Boundary layer turbulence ...

  7. Thermopower Enhancement by Fractional Layer Control in 2D Oxide...

    Office of Scientific and Technical Information (OSTI)

    Thermopower Enhancement by Fractional Layer Control in 2D Oxide Superlattices Citation Details In-Document Search Title: Thermopower Enhancement by Fractional Layer Control in 2D ...

  8. Application of Analytical Heat Transfer Models of Multi-layered...

    Office of Scientific and Technical Information (OSTI)

    multi-layered cylindrical solution to simulate the temperature response of a deep geologic radioactive waste repository with multi-layered natural and engineered...

  9. Spatial atomic layer deposition on flexible substrates using...

    Office of Scientific and Technical Information (OSTI)

    Spatial atomic layer deposition on flexible substrates using a modular rotating cylinder reactor Citation Details In-Document Search Title: Spatial atomic layer deposition on...

  10. Analysis of thomsen parameters for finely layered VTI media ...

    Office of Scientific and Technical Information (OSTI)

    Conference: Analysis of thomsen parameters for finely layered VTI media Citation Details In-Document Search Title: Analysis of thomsen parameters for finely layered VTI media ...

  11. Controlled Covalent Modification of Epitaxial Single Layer Graphene...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Controlled Covalent Modification of Epitaxial Single Layer Graphene on ... Title: Controlled Covalent Modification of Epitaxial Single Layer Graphene on 6H-SiC ...

  12. A dual mass flux framework for boundary layer convection

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A dual mass flux framework for boundary layer convection Neggers, Roel European Centre for Medium-range Weather Forecasts (ECMWF) Category: Modeling A new convective boundary layer...

  13. Buffer layer for thin film structures (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate ...

  14. Solvothermal Thin Film Deposition of Electron Blocking Layers...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solvothermal Thin Film Deposition of Electron Blocking Layers Home > Research > ANSER Research Highlights > Solvothermal Thin Film Deposition of Electron Blocking Layers...

  15. Graphene-silicon layered structures on single-crystalline Ir...

    Office of Scientific and Technical Information (OSTI)

    Accepted Manuscript: Graphene-silicon layered structures on single-crystalline Ir(111) thin films Prev Next Title: Graphene-silicon layered structures on single-crystalline...

  16. Thermal Multi-layer Coating Analysis | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thermal Multi-layer Coating Analysis Key to Argonne's thermal multi-layer analysis method is the numerical algorithm used for automated analysis of thermal imaging data for...

  17. Facile oxygen intercalation between full layer graphene and Ru...

    Office of Scientific and Technical Information (OSTI)

    Facile oxygen intercalation between full layer graphene and Ru(0001) under ambient ... Title: Facile oxygen intercalation between full layer graphene and Ru(0001) under ambient ...

  18. Atomic Layer Deposition of Metal Sulfide Materials | Argonne...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition of Metal Sulfide Materials Title Atomic Layer Deposition of Metal Sulfide Materials Publication Type Journal Article Year of Publication 2015 Authors...

  19. Impact of different cleaning processes on the laser damage threshold of antireflection coatings for Z-Backlighter optics at Sandia National Laboratories

    SciTech Connect (OSTI)

    Field, Ella; Bellum, John; Kletecka, Damon

    2014-11-06

    We have examined how different cleaning processes affect the laser-induced damage threshold of antireflection coatings for large dimension, Z-Backlighter laser optics at Sandia National Laboratories. Laser damage thresholds were measured after the coatings were created, and again 4 months later to determine which cleaning processes were most effective. There is a nearly twofold increase in laser-induced damage threshold between the antireflection coatings that were cleaned and those that were not cleaned. Aging of the coatings after 4 months resulted in even higher laser-induced damage thresholds. Also, the laser-induced damage threshold results revealed that every antireflection coating had a high defect density, despite the cleaning process used, which indicates that improvements to either the cleaning or deposition processes should provide even higher laser-induced damage thresholds.

  20. Impact of different cleaning processes on the laser damage threshold of antireflection coatings for Z-Backlighter optics at Sandia National Laboratories

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Field, Ella; Bellum, John; Kletecka, Damon

    2014-11-06

    We have examined how different cleaning processes affect the laser-induced damage threshold of antireflection coatings for large dimension, Z-Backlighter laser optics at Sandia National Laboratories. Laser damage thresholds were measured after the coatings were created, and again 4 months later to determine which cleaning processes were most effective. There is a nearly twofold increase in laser-induced damage threshold between the antireflection coatings that were cleaned and those that were not cleaned. Aging of the coatings after 4 months resulted in even higher laser-induced damage thresholds. Also, the laser-induced damage threshold results revealed that every antireflection coating had a high defectmore » density, despite the cleaning process used, which indicates that improvements to either the cleaning or deposition processes should provide even higher laser-induced damage thresholds.« less

  1. L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

    SciTech Connect (OSTI)

    Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

    2014-04-21

    In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for IIIV MOSFETs at the 7?nm technology node and/or beyond.

  2. Development of CDMS-II Surface Event Rejection Techniques and Their Extensions to Lower Energy Thresholds

    SciTech Connect (OSTI)

    Hofer, Thomas James

    2014-12-01

    The CDMS-II phase of the Cryogenic Dark Matter Search, a dark matter direct-detection experiment, was operated at the Soudan Underground Laboratory from 2003 to 2008. The full payload consisted of 30 ZIP detectors, totaling approximately 1.1 kg of Si and 4.8 kg of Ge, operated at temperatures of 50 mK. The ZIP detectors read out both ionization and phonon pulses from scatters within the crystals; channel segmentation and analysis of pulse timing parameters allowed e ective ducialization of the crystal volumes and background rejection su cient to set world-leading limits at the times of their publications. A full re-analysis of the CDMS-II data was motivated by an improvement in the event reconstruction algorithms which improved the resolution of ionization energy and timing information. The Ge data were re-analyzed using three distinct background-rejection techniques; the Si data from runs 125 - 128 were analyzed for the rst time using the most successful of the techniques from the Ge re-analysis. The results of these analyses prompted a novel \\mid-threshold" analysis, wherein energy thresholds were lowered but background rejection using phonon timing information was still maintained. This technique proved to have signi cant discrimination power, maintaining adequate signal acceptance and minimizing background leakage. The primary background for CDMS-II analyses comes from surface events, whose poor ionization collection make them di cult to distinguish from true nuclear recoil events. The novel detector technology of SuperCDMS, the successor to CDMS-II, uses interleaved electrodes to achieve full ionization collection for events occurring at the top and bottom detector surfaces. This, along with dual-sided ionization and phonon instrumentation, allows for excellent ducialization and relegates the surface-event rejection techniques of CDMS-II to a secondary level of background discrimination. Current and future SuperCDMS results hold great promise for mid- to low

  3. Process for depositing Cr-bearing layer

    DOE Patents [OSTI]

    Ellis, Timothy W.; Lograsso, Thomas A.; Eshelman, Mark A.

    1995-05-09

    A method of applying a Cr-bearing layer to a substrate, comprises introducing an organometallic compound, in vapor or solid powder form entrained in a carrier gas to a plasma of an inductively coupled plasma torch or device to thermally decompose the organometallic compound and contacting the plasma and the substrate to be coated so as to deposit the Cr-bearing layer on the substrate. A metallic Cr, Cr alloy or Cr compound such as chromium oxide, nitride and carbide can be provided on the substrate. Typically, the organometallic compound is introduced to an inductively coupled plasma torch that is disposed in ambient air so to thermally decompose the organometallic compound in the plasma. The plasma is directed at the substrate to deposit the Cr-bearing layer or coating on the substrate.

  4. Growth of oxide exchange bias layers

    DOE Patents [OSTI]

    Chaiken, Alison; Michel, Richard P.

    1998-01-01

    An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

  5. Process for depositing Cr-bearing layer

    DOE Patents [OSTI]

    Ellis, T.W.; Lograsso, T.A.; Eshelman, M.A.

    1995-05-09

    A method of applying a Cr-bearing layer to a substrate, comprises introducing an organometallic compound, in vapor or solid powder form entrained in a carrier gas to a plasma of an inductively coupled plasma torch or device to thermally decompose the organometallic compound and contacting the plasma and the substrate to be coated so as to deposit the Cr-bearing layer on the substrate. A metallic Cr, Cr alloy or Cr compound such as chromium oxide, nitride and carbide can be provided on the substrate. Typically, the organometallic compound is introduced to an inductively coupled plasma torch that is disposed in ambient air so to thermally decompose the organometallic compound in the plasma. The plasma is directed at the substrate to deposit the Cr-bearing layer or coating on the substrate. 7 figs.

  6. Growth of oxide exchange bias layers

    DOE Patents [OSTI]

    Chaiken, A.; Michel, R.P.

    1998-07-21

    An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bias layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200 C, the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 {angstrom}/sec. The resulting NiO film was amorphous. 4 figs.

  7. Excess Oxygen Defects in Layered Cuprates

    DOE R&D Accomplishments [OSTI]

    Lightfoot, P.; Pei, S. Y.; Jorgensen, J. D.; Manthiram, A.; Tang, X. X.; Goodenough, J. B.

    1990-09-01

    Neutron powder diffraction has been used to study the oxygen defect chemistry of two non-superconducting layered cuprates, La{sub 1. 25}Dy{sub 0.75}Cu{sub 3.75}F{sub 0.5}, having a T{sup {asterisk}}- related structure, and La{sub 1.85}Sr{sub 1.15}Cu{sub 2}O{sub 6.25}, having a structure related to that of the newly discovered double-layer superconductor La{sub 2-x}Sr{sub x}CaCu{sub 2}O{sub 6}. The role played by oxygen defects in determining the superconducting properties of layered cuprates is discussed.

  8. Permafrost Active Layer Seismic Interferometry Experiment (PALSIE).

    SciTech Connect (OSTI)

    Abbott, Robert; Knox, Hunter Anne; James, Stephanie; Lee, Rebekah; Cole, Chris

    2016-01-01

    We present findings from a novel field experiment conducted at Poker Flat Research Range in Fairbanks, Alaska that was designed to monitor changes in active layer thickness in real time. Results are derived primarily from seismic data streaming from seven Nanometric Trillium Posthole seismometers directly buried in the upper section of the permafrost. The data were evaluated using two analysis methods: Horizontal to Vertical Spectral Ratio (HVSR) and ambient noise seismic interferometry. Results from the HVSR conclusively illustrated the method's effectiveness at determining the active layer's thickness with a single station. Investigations with the multi-station method (ambient noise seismic interferometry) are continuing at the University of Florida and have not yet conclusively determined active layer thickness changes. Further work continues with the Bureau of Land Management (BLM) to determine if the ground based measurements can constrain satellite imagery, which provide measurements on a much larger spatial scale.

  9. Buffer layers on metal alloy substrates for superconducting tapes

    DOE Patents [OSTI]

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  10. Fusion utility in the Knudsen layer

    SciTech Connect (OSTI)

    Davidovits, Seth; Fisch, Nathaniel J.

    2014-09-15

    In inertial confinement fusion, the loss of fast ions from the edge of the fusing hot-spot region reduces the reactivity below its Maxwellian value. The loss of fast ions may be pronounced because of the long mean free paths of fast ions, compared with those of thermal ions. We introduce a fusion utility function to demonstrate essential features of this Knudsen layer effect, in both magnetized and unmagnetized cases. The fusion utility concept is also used to evaluate the restoring reactivity in the Knudsen layer by manipulating fast ions in phase space using waves.

  11. Photovoltaic cell with thin CS layer

    DOE Patents [OSTI]

    Jordan, John F.; Albright, Scot P.

    1994-01-18

    An improved photovoltaic panel and method of forming a photovoltaic panel are disclosed for producing a high efficiency CdS/CdTe photovoltaic cell. The photovoltaic panel of the present invention is initially formed with a substantially thick Cds layer, and the effective thickness of the CdS layer is substantially reduced during regrowth to both form larger diameter CdTe crystals and substantially reduce the effective thickness of the C This invention was made with Government support under Subcontract No. ZL-7-06031-3 awarded by the Department of Energy. The Government has certain rights in this invention.

  12. Fusion Utility in the Knudsen Layer

    SciTech Connect (OSTI)

    Davidovits, Seth; Fisch, Nathaniel J.

    2014-08-01

    In inertial confi nement fusion, the loss of fast ions from the edge of the fusing hot-spot region reduces the reactivity below its Maxwellian value. The loss of fast ions may be pronounced because of the long mean free paths of fast ions, compared to those of thermal ions. We introduce a fusion utility function to demonstrate essential features of this Knudsen layer e ffect, in both magnetized and unmagnetized cases. The fusion utility concept is also used to evaluate restoring the reactivity in the Knudsen layer by manipulating fast ions in phase space using waves.

  13. ARM - Field Campaign - Boundary Layer Cloud IOP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govCampaignsBoundary Layer Cloud IOP Campaign Links Campaign Images ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Boundary Layer Cloud IOP 2005.07.11 - 2005.08.07 Lead Scientist : William Shaw For data sets, see below. Abstract Investigators from Pacific Northwest National Laboratory, in collaboration with scientists from a number of other institutions, carried out a month of intensive measurements at

  14. Damage Threshold of Platinum Coating used for Optics for Self-Seeding of Soft X-ray Free Electron Laser

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Krzywinski, Jacek; Cocco, Daniele; Moeller, Stefan; Ratner, Daniel

    2015-02-23

    We investigated the experimental damage threshold of platinum coating on a silicon substrate illuminated by soft x-ray radiation at grazing incidence angle of 2.1 deg. The coating was the same as the blazed grating used for the soft X-ray self-seeding optics of the Linac Coherent Light Source free electron laser. The irradiation condition was chosen such that the absorbed dose was similar to the maximum dose expected for the grating. The expected dose was simulated by solving the Helmholtz equation in non-homogenous media. The experiment was performed at 900 eV photon energy for both single pulse and multi-shot conditions. Wemorehave not observed single shot damage. This corresponds to a single shot damage threshold being higher than 3 J/cm2. The multiple shot damage threshold measured for 10 shots and about 600 shots was determined to be 0.95 J/cm2 and 0.75 J/cm2 respectively. The damage threshold occurred at an instantaneous dose which is higher that the melt dose of platinum.less

  15. A threshold gas Cerenkov detector for the spin asymmetries of the nucleon experiment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Armstrong, Whitney R.; Choi, Seonho; Kaczanowicz, Ed; Lukhanin, Alexander; Meziani, Zein -Eddine; Sawatzky, Brad D.

    2015-09-26

    In this study, we report on the design, construction, commissioning, and performance of a threshold gas Cerenkov counter in an open configuration, which operates in a high luminosity environment and produces a high photo-electron yield. Part of a unique open geometry detector package known as the Big Electron Telescope Array, this Cerenkov counter served to identify scattered electrons and reject produced pions in an inclusive scattering experiment known as the Spin Asymmetries of the Nucleon Experiment E07-003 at the Thomas Jefferson National Accelerator Facility (TJNAF) also known as Jefferson Lab. The experiment consisted of a measurement of double spin asymmetriesmore » A|| and A⊥ of a polarized electron beam impinging on a polarized ammonia target. The Cerenkov counter's performance is characterised by a yield of about 20 photoelectrons per electron or positron track. Thanks to this large number of photoelectrons per track, the Cerenkov counter had enough resolution to identify electron-positron pairs from the conversion of photons resulting mainly from π0 decays.« less

  16. Sensitivity of the threshold voltage of organic thin-film transistors to light and water

    SciTech Connect (OSTI)

    Feng, Cong; Marinov, Ognian; Deen, M. Jamal; Selvaganapathy, Ponnambalam Ravi; Wu, Yiliang

    2015-05-14

    Analyses of extensive experiments with organic thin-film transistors (OTFTs) indicate that the threshold voltage V{sub T} of an OTFT has a temporal differential sensitivity. In particular, V{sub T} changes initially by changing the light illumination intensity or making/removing a contact of water with the organic semiconductor. Keeping the conditions stationary, then the initial shift of V{sub T} diminishes, since the time dependence of V{sub T} gradually recovers the OTFT to the state before applying the change in the environmental conditions. While still causing a differential and time-variant shift of V{sub T}, the deionized water does not have a dramatic impact on OTFTs that use the polymer DKPP-?T (diketopyrrolopyrrole ?-unsubstituted quaterthiophene) as the active semiconductor material. Observations for the impact of water are made from experiments with an OTFT that has a microfluidic channel on the top the electrical channel, with the water in the microfluidic channel in direct contact with the electrical channel of the OTFT. This arrangement of electrical and microfluidic channels is a novel structure of the microfluidic OTFT, suitable for sensing applications of liquid analytes by means of organic electronics.

  17. Revision of laser-induced damage threshold evaluation from damage probability data

    SciTech Connect (OSTI)

    Bataviciute, Gintare; Grigas, Povilas; Smalakys, Linas; Melninkaitis, Andrius

    2013-04-15

    In this study, the applicability of commonly used Damage Frequency Method (DFM) is addressed in the context of Laser-Induced Damage Threshold (LIDT) testing with pulsed lasers. A simplified computer model representing the statistical interaction between laser irradiation and randomly distributed damage precursors is applied for Monte Carlo experiments. The reproducibility of LIDT predicted from DFM is examined under both idealized and realistic laser irradiation conditions by performing numerical 1-on-1 tests. A widely accepted linear fitting resulted in systematic errors when estimating LIDT and its error bars. For the same purpose, a Bayesian approach was proposed. A novel concept of parametric regression based on varying kernel and maximum likelihood fitting technique is introduced and studied. Such approach exhibited clear advantages over conventional linear fitting and led to more reproducible LIDT evaluation. Furthermore, LIDT error bars are obtained as a natural outcome of parametric fitting which exhibit realistic values. The proposed technique has been validated on two conventionally polished fused silica samples (355 nm, 5.7 ns).

  18. PT-symmetric sinusoidal optical lattices at the symmetry-breaking threshold

    SciTech Connect (OSTI)

    Graefe, Eva-Maria [Mathematics Department, Imperial College, London SW7 2BZ (United Kingdom); Jones, H. F. [Physics Department, Imperial College, London SW7 2BZ (United Kingdom)

    2011-07-15

    The PT-symmetric potential V{sub 0}[cos(2{pi}x/a)+i{lambda}sin(2{pi}x/a)] has a completely real spectrum for {lambda}{<=}1 and begins to develop complex eigenvalues for {lambda}>1. At the symmetry-breaking threshold {lambda}=1 some of the eigenvectors become degenerate, giving rise to a Jordan-block structure for each degenerate eigenvector. In general this is expected to result in a secular growth in the amplitude of the wave. However, it has been shown in a recent paper by Longhi, by numerical simulation and by the use of perturbation theory, that for a broad initial wave packet this growth is suppressed, and instead a saturation leading to a constant maximum amplitude is observed. We revisit this problem by explicitly constructing the Bloch wave functions and the associated Jordan functions and using the method of stationary states to find the dependence on the longitudinal distance z for a variety of different initial wave packets. This allows us to show in detail how the saturation of the linear growth arises from the close connection between the contributions of the Jordan functions and those of the neighboring Bloch waves.

  19. Reprogrammable read only variable threshold transistor memory with isolated addressing buffer

    DOE Patents [OSTI]

    Lodi, Robert J.

    1976-01-01

    A monolithic integrated circuit, fully decoded memory comprises a rectangular array of variable threshold field effect transistors organized into a plurality of multi-bit words. Binary address inputs to the memory are decoded by a field effect transistor decoder into a plurality of word selection lines each of which activates an address buffer circuit. Each address buffer circuit, in turn, drives a word line of the memory array. In accordance with the word line selected by the decoder the activated buffer circuit directs reading or writing voltages to the transistors comprising the memory words. All of the buffer circuits additionally are connected to a common terminal for clearing all of the memory transistors to a predetermined state by the application to the common terminal of a large magnitude voltage of a predetermined polarity. The address decoder, the buffer and the memory array, as well as control and input/output control and buffer field effect transistor circuits, are fabricated on a common substrate with means provided to isolate the substrate of the address buffer transistors from the remainder of the substrate so that the bulk clearing function of simultaneously placing all of the memory transistors into a predetermined state can be performed.

  20. Pulsed laser generation of ultrasound in a metal plate between the melting and ablation thresholds

    SciTech Connect (OSTI)

    Every, A. G.; Utegulov, Z. N.; Veres, I. A.

    2015-03-31

    The generation of ultrasound in a metal plate exposed to nanosecond pulsed laser heating, sufficient to cause melting but not ablation, is treated. Consideration is given to the spatial and temporal profiles of the laser pulse, penetration of the laser beam into the sample, the evolution of the melt pool, and thermal conduction in the melt and surrounding solid. The excitation of the ultrasound takes place over a few nanoseconds, and occurs predominantly within the thermal diffusion length of a micron or so beneath the surface. Because of this, the output of the thermal simulations can be represented as axially symmetric transient radial and normal surface force distributions. The epicentral displacement response at the opposite surface to these forces is obtained by two methods, the one based on the elastodynamic Green’s functions for plate geometry determined by the Cagniard generalized ray method, and the other using a finite element numerical method. The two approaches are in very close agreement. Numerical simulations are reported of the epicentral displacement response of a 3.12mm thick tungsten plate irradiated with a 4 ns pulsed laser beam with Gaussian spatial profile, at intensities below and above the melt threshold. Comparison is made between results obtained using available temperature dependent thermophysical data, and room temperature materials constants except near the melting point.

  1. A threshold gas Cerenkov detector for the spin asymmetries of the nucleon experiment

    SciTech Connect (OSTI)

    Armstrong, Whitney R.; Choi, Seonho; Kaczanowicz, Ed; Lukhanin, Alexander; Meziani, Zein -Eddine; Sawatzky, Brad D.

    2015-09-26

    In this study, we report on the design, construction, commissioning, and performance of a threshold gas Cerenkov counter in an open configuration, which operates in a high luminosity environment and produces a high photo-electron yield. Part of a unique open geometry detector package known as the Big Electron Telescope Array, this Cerenkov counter served to identify scattered electrons and reject produced pions in an inclusive scattering experiment known as the Spin Asymmetries of the Nucleon Experiment E07-003 at the Thomas Jefferson National Accelerator Facility (TJNAF) also known as Jefferson Lab. The experiment consisted of a measurement of double spin asymmetries A|| and A? of a polarized electron beam impinging on a polarized ammonia target. The Cerenkov counter's performance is characterised by a yield of about 20 photoelectrons per electron or positron track. Thanks to this large number of photoelectrons per track, the Cerenkov counter had enough resolution to identify electron-positron pairs from the conversion of photons resulting mainly from ?0 decays.

  2. Coherent ?{sup 0}-photoproduction on the deuteron near the ?-production threshold including polarization observables

    SciTech Connect (OSTI)

    Darwish, Eed M.; Al-Thoyaib, Suleiman S.

    2014-12-15

    Coherent ?{sup 0}-photoproduction on the deuteron including polarization observables is studied in the energy region near the ?-production threshold at backward center-of-mass angles of the outgoing pion. This work is motivated by the measurements of the CLAS Collaboration at Jefferson Lab, where a cusp-like structure in the energy dependence of the differential cross section has been observed at extremely backward pion angles. The present approach is based on the impulse approximation and first-order rescattering diagrams with intermediate production of both ?- and ?-mesons. Numerical results for unpolarized cross sections, the linear photon asymmetry (?), the vector (T{sub 11}) and tensor (T{sub 2M}, M=0, 1, 2) deuteron target asymmetries, and the double polarization E-asymmetry are predicted and compared with available experimental data and other theoretical models. The effect of first-order rescattering is found to be much larger in spin asymmetries than in the unpolarized cross sections. It reaches on average about 40% in the tensor target and E asymmetries. Compared to the experimental data from CLAS Collaboration, sizable discrepancies are found. This is not the case for the linear photon asymmetry, for which a better comparison with the data from YerPhI Collaboration is obtained.

  3. Investigation of the Cause of Low Blister Threshold Temperatures in the RERTR-12 and AFIP-4 Experiments

    SciTech Connect (OSTI)

    Mitchell K Meyer

    2012-06-01

    Blister–threshold testing of fuel plates is a standard method through which the safety margin for operation of plate-type in research and test reactors is assessed. The blister-threshold temperature is indicative of the ability of fuel to operate at high temperatures for short periods of time (transient conditions) without failure. This method of testing was applied to the newly developed U-Mo monolithic fuel system. Blister annealing studies on the U-Mo monolithic fuel plates began in 2007, with the Reduced Enrichment for Research and Test Reactors (RERTR)-6 experiment, and they have continued as the U-Mo fuel system has evolved through the research and development process. Blister anneal threshold temperatures from early irradiation experiments (RERTR-6 through RERTR-10) ranged from 400 to 500°C. These temperatures were projected to be acceptable for NRC-licensed research reactors and the high-power Advanced Test Reactor (ATR) and the High Flux Isotope Reactor (HFIR) based on current safety-analysis reports (SARs). Initial blister testing results from the RERTR-12 experiment capsules X1 and X2 showed a decrease in the blister-threshold temperatures. Blister threshold temperatures from this experiment ranged from 300 to 400°C. Selected plates from the AFIP-4 experiment, which was fabricated using a process similar to that used to fabricate the RERTR-12 experiment, also underwent blister testing to determine whether results would be similar. The measured blister-threshold temperatures from the AFIP-4 plates fell within the same blister-threshold temperature range measured in the RERTR-12 plates. Investigation of the cause of this decrease in bister threshold temperature is being conducted under the guidance of Idaho National Laboratory PLN-4155, “Analysis of Low Blister Threshold Temperatures in the RERTR-12 and AFIP-4 Experiments,” and is driven by hypotheses. The main focus of the investigation is in the following areas: 1. Fabrication variables 2. Pre

  4. Thick diffusion limit boundary layer test problems

    SciTech Connect (OSTI)

    Bailey, T. S.; Warsa, J. S.; Chang, J. H.; Adams, M. L.

    2013-07-01

    We develop two simple test problems that quantify the behavior of computational transport solutions in the presence of boundary layers that are not resolved by the spatial grid. In particular we study the quantitative effects of 'contamination' terms that, according to previous asymptotic analyses, may have a detrimental effect on the solutions obtained by both discontinuous finite element (DFEM) and characteristic-method (CM) spatial discretizations, at least for boundary layers caused by azimuthally asymmetric incident intensities. Few numerical results have illustrated the effects of this contamination, and none have quantified it to our knowledge. Our test problems use leading-order analytic solutions that should be equal to zero in the problem interior, which means the observed interior solution is the error introduced by the contamination terms. Results from DFEM solutions demonstrate that the contamination terms can cause error propagation into the problem interior for both orthogonal and non-orthogonal grids, and that this error is much worse for non-orthogonal grids. This behavior is consistent with the predictions of previous analyses. We conclude that these boundary layer test problems and their variants are useful tools for the study of errors that are introduced by unresolved boundary layers in diffusive transport problems. (authors)

  5. Buffer layers on biaxially textured metal substrates

    DOE Patents [OSTI]

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2001-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  6. Atomic layer deposition of nanoporous biomaterials.

    SciTech Connect (OSTI)

    Narayan, R. J.; Adiga, S. P.; Pellin, M. J.; Curtiss, L. A.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N. A.; Brigmon, R. L.; Elam, J. W.; Univ. of North Carolina; North Carolina State Univ.; Eastman Kodak Co.; North Dakota State Univ.; SRL

    2010-03-01

    Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials. Nanoporous alumina, also known as anodic aluminum oxide (AAO), is a nanomaterial that exhibits several unusual properties, including high pore densities, straight pores, small pore sizes, and uniform pore sizes. In 1953, Keller et al. showed that anodizing aluminum in acid electrolytes results in a thick layer of nearly cylindrical pores, which are arranged in a close-packed hexagonal cell structure. More recently, Matsuda & Fukuda demonstrated preparation of highly ordered platinum and gold nanohole arrays using a replication process. In this study, a negative structure of nanoporous alumina was initially fabricated and a positive structure of a nanoporous metal was subsequently fabricated. Over the past fifteen years, nanoporous alumina membranes have been used as templates for growth of a variety of nanostructured materials, including nanotubes, nanowires, nanorods, and nanoporous membranes.

  7. Planetary Boundary Layer from AERI and MPL

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Sawyer, Virginia

    2014-02-13

    The distribution and transport of aerosol emitted to the lower troposphere is governed by the height of the planetary boundary layer (PBL), which limits the dilution of pollutants and influences boundary-layer convection. Because radiative heating and cooling of the surface strongly affect the PBL top height, it follows diurnal and seasonal cycles and may vary by hundreds of meters over a 24-hour period. The cap the PBL imposes on low-level aerosol transport makes aerosol concentration an effective proxy for PBL height: the top of the PBL is marked by a rapid transition from polluted, well-mixed boundary-layer air to the cleaner, more stratified free troposphere. Micropulse lidar (MPL) can provide much higher temporal resolution than radiosonde and better vertical resolution than infrared spectrometer (AERI), but PBL heights from all three instruments at the ARM SGP site are compared to one another for validation. If there is agreement among them, the higher-resolution remote sensing-derived PBL heights can accurately fill in the gaps left by the low frequency of radiosonde launches, and thus improve model parameterizations and our understanding of boundary-layer processes.

  8. Double layer capacitor prospects look good

    SciTech Connect (OSTI)

    1995-07-01

    The Fourth International Seminar in Double Layer Capacitors and similar energy devices has been sponsored again by Dr. S.P. Wolsky and Dr. Nikola Marincic. The seminar was held in December 1994, at Deerfield Beach, FL. This report provides a brief description of information on supercapacitors.

  9. Nano-soldering to single atomic layer

    DOE Patents [OSTI]

    Girit, Caglar O.; Zettl, Alexander K.

    2011-10-11

    A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.

  10. Quantum Security for the Physical Layer

    SciTech Connect (OSTI)

    Humble, Travis S

    2013-01-01

    The physical layer describes how communication signals are encoded and transmitted across a channel. Physical security often requires either restricting access to the channel or performing periodic manual inspections. In this tutorial, we describe how the field of quantum communication offers new techniques for securing the physical layer. We describe the use of quantum seals as a unique way to test the integrity and authenticity of a communication channel and to provide security for the physical layer. We present the theoretical and physical underpinnings of quantum seals including the quantum optical encoding used at the transmitter and the test for non-locality used at the receiver. We describe how the envisioned quantum physical sublayer senses tampering and how coordination with higher protocol layers allow quantum seals to influence secure routing or tailor data management methods. We conclude by discussing challenges in the development of quantum seals, the overlap with existing quantum key distribution cryptographic services, and the relevance of a quantum physical sublayer to the future of communication security.

  11. Layered method of electrode for solid oxide electrochemical cells

    SciTech Connect (OSTI)

    Jensen, R.R.

    1991-07-30

    This patent describes a fuel electrode. It comprises a first layer comprising substantially stabilized zirconia; a second layer, in intimate contact with the first layer, comprising a mixture of stabilized zirconia and metal powder selected from the group consisting of nickel, palladium, platinum and cobalt; and a third layer comprising substantially metal powder selected from the group consisting of nickel, palladium, platinum and cobalt.

  12. Pd/Ni-WO3 anodic double layer gasochromic device

    DOE Patents [OSTI]

    Lee, Se-Hee; Tracy, C. Edwin; Pitts, J. Roland; Liu, Ping

    2004-04-20

    An anodic double layer gasochromic sensor structure for optical detection of hydrogen in improved response time and with improved optical absorption real time constants, comprising: a glass substrate; a tungsten-doped nickel oxide layer coated on the glass substrate; and a palladium layer coated on the tungsten-doped nickel oxide layer.

  13. Double layer field shaping systems for toroidal plasmas

    DOE Patents [OSTI]

    Ohyabu, Nobuyoshi

    1982-01-01

    Methods and apparatus for plasma generation, confinement and control such as Tokamak plasma systems are described having a two layer field shaping coil system comprising an inner coil layer close to the plasma and an outer coil layer to minimize the current in the inner coil layer.

  14. Back contact buffer layer for thin-film solar cells

    DOE Patents [OSTI]

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  15. Thin film solar cell including a spatially modulated intrinsic layer

    SciTech Connect (OSTI)

    Guha, Subhendu; Yang, Chi-Chung; Ovshinsky, Stanford R.

    1989-03-28

    One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

  16. Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

    SciTech Connect (OSTI)

    Altuntas, Halit E-mail: biyikli@unam.bilkent.edu.tr; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi E-mail: biyikli@unam.bilkent.edu.tr

    2015-04-21

    Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200?C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.221.5 MV/m), Schottky emission (23.639.5 MV/m), Frenkel-Poole emission (63.8211.8 MV/m), trap-assisted tunneling (226280 MV/m), and Fowler-Nordheim tunneling (290447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.

  17. Conductive layer for biaxially oriented semiconductor film growth

    DOE Patents [OSTI]

    Findikoglu, Alp T.; Matias, Vladimir

    2007-10-30

    A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

  18. e08-008: Exclusive study of deuteron electrodisintegration near threshold

    SciTech Connect (OSTI)

    Hanretty, C.

    2014-01-01

    The study of threshold electrodisintegration of and elastic scattering on the only stable two nucleon system, the deuteron, can reveal specific aspects of the N-N interaction. The simplicity of electrodisintegration along with the simplicity of the deuteron makes this study most appropriate for revealing these interactions. By using an incident beam of polarized electrons and by measuring the polarization of the recoiling proton, the ratio of the electric (G{sub E} ) and magnetic (G{sub M} ) form factors for d((vector e),e'(vector p)) (and p((vector e) ,e'(vector p))) reactions may be extracted. This experiment was conducted in Hall A at Jefferson Lab in Newport News, Virginia using a beam of polarized electrons provided by the CEBAF Accelerator incident on a liquid deuterium (and hydrogen) target. The scattered electron and the recoiling (polarized) proton were detected using the High Resolution Spectrometers of Hall A. To determine the polarization of the recoil proton, an analyzing material was placed perpendicular to the protons trajectory through the spectrometer, in front of a set of straw chambers. Due to the spin-orbit interactions involved in the scattering of the proton from the analyzer material, asymmetries seen in the distribution of events detected by these straw chambers reveal the polarization of the recoil proton. By tracking the spin procession of the polarized protons from the straw chambers back to the target, the transferred and induced polarization of the proton may be determined. The (double-spin) asymmetries observed in the straw chambers will first be studied for the well-known elastic p((vector e), e'(vector p)) process and compared to the asymmetries for d((vector e),e'(vector p))n(x{sub B}=1) . The analysis will then be repeated to determine how these asymmetries change with increasing x{sub B} (to the kinematic limit for deuteron electrodisintegration).

  19. Elastodynamic behavior of the three dimensional layer-by-layer metamaterial structure

    SciTech Connect (OSTI)

    Aravantinos-Zafiris, N.; Sigalas, M. M.; Economou, E. N.

    2014-10-07

    In this work, we numerically investigate for the first time the elastodynamic behavior of a three dimensional layer-by-layer rod structure, which is easy to fabricate and has already proved to be very efficient as a photonic crystal. The Finite Difference Time Domain method was used for the numerical calculations. For the rods, several materials were examined and the effects of all the geometric parameters of the structure were also numerically investigated. Additionally, two modifications of the structure were included in our calculations. The results obtained here (for certain geometric parameters), exhibiting a high ratio of longitudinal over transverse sound velocity and therefore a close approach to ideal pentamode behavior over a frequency range, clearly show that the layer-by-layer rod structure, besides being an efficient photonic crystal, is a very serious contender as an elastodynamic metamaterial.

  20. Method of adhesion between an oxide layer and a metal layer

    DOE Patents [OSTI]

    Jennison, Dwight R.; Bogicevic, Alexander; Kelber, Jeffry A.; Chambers, Scott A.

    2004-09-14

    A method of controlling the wetting characteristics and increasing the adhesion between a metal and an oxide layer. By introducing a negatively-charged species to the surface of an oxide layer, layer-by-layer growth of metal deposited onto the oxide surface is promoted, increasing the adhesion strength of the metal-oxide interface. The negatively-charged species can either be deposited onto the oxide surface or a compound can be deposited that dissociates on, or reacts with, the surface to form the negatively-charged species. The deposited metal adatoms can thereby bond laterally to the negatively-charged species as well as vertically to the oxide surface as well as react with the negatively charged species, be oxidized, and incorporated on or into the surface of the oxide.

  1. Final report for CCS cross-layer reliability visioning study

    SciTech Connect (OSTI)

    Quinn, Heather M; Dehon, Andre; Carter, Nicj

    2010-12-20

    spite of rare events, such as one high-threshold transistor in a billion or one erroneous gate evaluation in an hour of computation, cross-layer reliability schemes make reliability management a cooperative effort across the system stack, sharing information across layers so that they only expend energy on reliability when an error actually occurs. Figure 1 illustrates an example of such a system that uses a combination of information from the application and cheap architecture-level techniques to detect errors. When an error occurs, mechanisms at higher levels in the stack correct the error, efficiently delivering correct operation to the user in spite of errors at the device or circuit levels. In the realms of memory and communication, engineers have a long history of success in tolerating unpredictable effects such as fabrication variability, transient upsets, and lifetime wear using information sharing, limited redundancy, and cross-layer approaches that anticipate, accommodate, and suppress errors. Networks use a combination of hardware and software to guarantee end-toend correctness. Error-detection and correction codes use additional information to correct the most common errors, single-bit transmission errors. When errors occur that cannot be corrected by these codes, the network protocol requests re-transmission of one or more packets until the correct data is received. Similarly, computer memory systems exploit a cross-layer division of labor to achieve high performance with modest hardware. Rather than demanding that hardware alone provide the virtual memory abstraction, software page-fault and TLB-miss handlers allow a modest piece of hardware, the TLB, to handle the common-case operations on a cyc1e-by-cycle basis while infrequent misses are handled in system software. Unfortunately, mitigating logic errors is not as simple or as well researched as memory or communication systems. This lack of understanding has led to very expensive solutions. For example

  2. Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

    SciTech Connect (OSTI)

    Yun, Yu; Meng, Dechao; Wang, Jianlin; Ma, Chao; Zhai, Xiaofang; Huang, Haoliang; Fu, Zhengping; Peng, Ranran; Brown, Gail J.; and others

    2015-07-06

    There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high quality Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.

  3. Biomimetic processing of oriented crystalline ceramic layers

    SciTech Connect (OSTI)

    Cesarano, J.; Shelnutt, J.A.

    1997-10-01

    The aim of this project was to develop the capabilities for Sandia to fabricate self assembled Langmuir-Blodgett (LB) films of various materials and to exploit their two-dimensional crystalline structure to promote the growth of oriented thin films of inorganic materials at room temperature. This includes the design and synthesis of Langmuir-active (amphiphilic) organic molecules with end groups offering high nucleation potential for various ceramics. A longer range goal is that of understanding the underlying principles, making it feasible to use the techniques presented in this report to fabricate unique oriented films of various materials for electronic, sensor, and membrane applications. Therefore, whenever possible, work completed in this report was completed with the intention of addressing the fundamental phenomena underlying the growth of crystalline, inorganic films on template layers of highly organized organic molecules. This problem was inspired by biological processes, which often produce exquisitely engineered structures via templated growth on polymeric layers. Seashells, for example, exhibit great toughness owing to their fine brick-and-mortar structure that results from templated growth of calcium carbonate on top of layers of ordered organic proteins. A key goal in this work, therefore, is to demonstrate a positive correlation between the order and orientation of the template layer and that of the crystalline ceramic material grown upon it. The work completed was comprised of several parallel efforts that encompassed the entire spectrum of biomimetic growth from solution. Studies were completed on seashells and the mechanisms of growth for calcium carbonate. Studies were completed on the characterization of LB films and the capability developed for the in-house fabrication of these films. Standard films of fatty acids were studied as well as novel polypeptides and porphyrins that were synthesized.

  4. Semiconductor tunnel junction with enhancement layer

    DOE Patents [OSTI]

    Klem, John F.; Zolper, John C.

    1997-01-01

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

  5. Semiconductor tunnel junction with enhancement layer

    DOE Patents [OSTI]

    Klem, J.F.; Zolper, J.C.

    1997-10-21

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.

  6. Layered Atom Arrangements in Complex Materials

    SciTech Connect (OSTI)

    K.E. Sikafus; R.W.Grimes; S.M.Corish; A.R. Cleave; M.Tang; C.R.Stanek; B.P. Uberuaga; J.A.Valdez

    2005-04-15

    In this report, we develop an atom layer stacking model to describe systematically the crystal structures of complex materials. To illustrate the concepts, we consider a sequence of oxide compounds in which the metal cations progress in oxidation state from monovalent (M{sup 1+}) to tetravalent (M{sup 4+}). We use concepts relating to geometric subdivisions of a triangular atom net to describe the layered atom patterns in these compounds (concepts originally proposed by Shuichi Iida). We demonstrate that as a function of increasing oxidation state (from M{sup 1+} to M{sup 4+}), the layer stacking motifs used to generate each successive structure (specifically, motifs along a 3 symmetry axis), progress through the following sequence: MMO, MO, M{sub r}O, MO{sub r/s}O{sub u/v}, MOO (where M and O represent fully dense triangular atom nets and r/s and u/v are fractions used to describe partially filled triangular atom nets). We also develop complete crystallographic descriptions for the compounds in our oxidation sequence using trigonal space group R{bar 3}.

  7. SUPERSONIC SHEAR INSTABILITIES IN ASTROPHYSICAL BOUNDARY LAYERS

    SciTech Connect (OSTI)

    Belyaev, Mikhail A.; Rafikov, Roman R., E-mail: rrr@astro.princeton.edu [Department of Astrophysical Sciences, Princeton University, Ivy Lane, Princeton, NJ 08540 (United States)

    2012-06-20

    Disk accretion onto weakly magnetized astrophysical objects often proceeds via a boundary layer (BL) that forms near the object's surface, in which the rotation speed of the accreted gas changes rapidly. Here, we study the initial stages of formation for such a BL around a white dwarf or a young star by examining the hydrodynamical shear instabilities that may initiate mixing and momentum transport between the two fluids of different densities moving supersonically with respect to each other. We find that an initially laminar BL is unstable to two different kinds of instabilities. One is an instability of a supersonic vortex sheet (implying a discontinuous initial profile of the angular speed of the gas) in the presence of gravity, which we find to have a growth rate of order (but less than) the orbital frequency. The other is a sonic instability of a finite width, supersonic shear layer, which is similar to the Papaloizou-Pringle instability. It has a growth rate proportional to the shear inside the transition layer, which is of order the orbital frequency times the ratio of stellar radius to the BL thickness. For a BL that is thin compared to the radius of the star, the shear rate is much larger than the orbital frequency. Thus, we conclude that sonic instabilities play a dominant role in the initial stages of nonmagnetic BL formation and give rise to very fast mixing between disk gas and stellar fluid in the supersonic regime.

  8. Multi-layer carbon-based coatings for field emission

    DOE Patents [OSTI]

    Sullivan, John P.; Friedmann, Thomas A.

    1998-01-01

    A multi-layer resistive carbon film field emitter device for cold cathode field emission applications. The multi-layered film of the present invention consists of at least two layers of a conductive carbon material, preferably amorphous-tetrahedrally coordinated carbon, where the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure can be a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film can be a plurality of carbon layers, where adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.

  9. Multi-layer carbon-based coatings for field emission

    DOE Patents [OSTI]

    Sullivan, J.P.; Friedmann, T.A.

    1998-10-13

    A multi-layer resistive carbon film field emitter device for cold cathode field emission applications is disclosed. The multi-layered film of the present invention consists of at least two layers of a conductive carbon material, preferably amorphous-tetrahedrally coordinated carbon, where the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure can be a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film can be a plurality of carbon layers, where adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. 8 figs.

  10. Organic electronic devices with multiple solution-processed layers

    DOE Patents [OSTI]

    Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

    2015-08-04

    A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

  11. On Baryon-Antibaryon Cross Sections from Initial State Radiation Processes at BABAR and their Surprising Threshold Behavior

    SciTech Connect (OSTI)

    Pacetti, Simone

    2015-04-14

    BABAR has measured with unprecedented accuracy the e+e- → pp-bar and e+e- → ΛΛ-bar cross sections by means of the initial state radiation technique, which has the advantages of good efficiency and energy resolution, and full angular acceptance in the threshold region. A striking feature of these cross sections is their non-vanishing values at threshold. In the case of charged baryons, the phenomenon is well understood in terms of the Coulomb interaction between the outgoing baryon and antibaryon. However, such an effect is not expected for neutral baryons. We suggest a simple explanation for both charged and neutral baryon pairs based on Coulomb interactions at the valence quark level.

  12. Exotic Effects at the Charm Threshold and Other Novel Physics Topics at JLab-12 GeV

    SciTech Connect (OSTI)

    Brodsky, Stanley J.; /SLAC

    2012-05-03

    I briefly survey a number of novel hadron physics topics which can be investigated with the 12 GeV upgrade at J-Lab. The topics include new the formation of exotic heavy quark resonances accessible above the charm threshold, intrinsic charm and strangeness phenomena, the exclusive Sivers effect, hidden-color Fock states of nuclei, local two-photon interactions in deeply virtual Compton scattering, and non-universal antishadowing.

  13. Study of small carbon and semiconductor clusters using negative ion threshold photodetachment spectroscopy

    SciTech Connect (OSTI)

    Arnold, C.C.

    1994-08-01

    The bonding and electronics of several small carbon and semiconductor clusters containing less than ten atoms are probed using negative ion threshold photodetachment (zero electron kinetic energy, or ZEKE) spectroscopy. ZEKE spectroscopy is a particularly advantageous technique for small cluster study, as it combines mass selection with good spectroscopic resolution. The ground and low-lying electronic states of small clusters in general can be accessed by detaching an electron from the ground anion state. The clusters studied using this technique and described in this work are C{sub 6}{sup {minus}}/C{sub 6}, Si{sub n}{sup {minus}}/Si{sub n} (n = 2, 3, 4), Ge{sub 2}{sup {minus}}/Ge{sub 2}, In{sub 2}P{sup {minus}}/In{sub 2}P,InP{sub 2}{sup {minus}}/InP{sup 2}, and Ga{sub 2}As{sup {minus}}. The total photodetachment cross sections of several other small carbon clusters and the ZEKE spectrum of the I{sup {minus}}{center_dot}CH{sub 3}I S{sub N}2 reaction complex are also presented to illustrate the versatility of the experimental apparatus. Clusters with so few atoms do not exhibit bulk properties. However, each specie exhibits bonding properties that relate to the type of bonding found in the bulk. C{sub 6}, as has been predicted, exhibits a linear cumulenic structure, where double bonds connect all six carbon atoms. This double bonding reflects how important {pi} bonding is in certain phases of pure carbon (graphite and fullerenes). The symmetric stretch frequencies observed in the C{sub 6}{sup {minus}} spectra, however, are in poor agreement with the calculated values. Also observed as sharp structure in total photodetachment cross section scans was an excited anion state bound by only {approximately}40 cm{sup {minus}1} relative to the detachment continuum. This excited anion state appears to be a valence bound state, possible because of the high electron affinity of C{sub 6}, and the open shell of the anion.

  14. Wall loss of atomic nitrogen determined by ionization threshold mass spectrometry

    SciTech Connect (OSTI)

    Sode, M. Schwarz-Selinger, T.; Jacob, W.; Kersten, H.

    2014-11-21

    In the afterglow of an inductively coupled N{sub 2} plasma, relative N atom densities are measured by ionization threshold mass spectrometry as a function of time in order to determine the wall loss time t{sub wN} from the exponential decay curves. The procedure is performed with two mass spectrometers on different positions in the plasma chamber. t{sub wN} is determined for various pressures, i.e., for 3.0, 5.0, 7.5, and 10?Pa. For this conditions also the internal plasma parameters electron density n{sub e} and electron temperature T{sub e} are determined with the Langmuir probe and the rotational temperature T{sub rot}{sup N{sub 2}} of N{sub 2} is determined with the optical emission spectroscopy. For T{sub rot}{sup N{sub 2}}, a procedure is presented to evaluate the spectrum of the transition ?{sup ?}=0??{sup ?}=2 of the second positive system (C{sup 3}?{sub u}?B{sup 3}?{sub g}) of N{sub 2}. With this method, a gas temperature of 610?K is determined. For both mass spectrometers, an increase of the wall loss times of atomic nitrogen with increasing pressure is observed. The wall loss time measured with the first mass spectrometer in the radial center of the cylindrical plasma vessel increases linearly from 0.31?ms for 3?Pa to 0.82?ms for 10?Pa. The wall loss time measured with the second mass spectrometer (further away from the discharge) is about 4 times higher. A model is applied to describe the measured t{sub wN.} The main loss mechanism of atomic nitrogen for the considered pressure is diffusion to the wall. The surface loss probability ?{sub N} of atomic nitrogen on stainless steel was derived from t{sub wN} and is found to be 1 for the present conditions. The difference in wall loss times measured with the mass spectrometers on different positions in the plasma chamber is attributed to the different diffusion lengths.

  15. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

    SciTech Connect (OSTI)

    Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J.

    2012-01-15

    Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

  16. Analysis of the Younger Dryas Impact Layer

    SciTech Connect (OSTI)

    Firestone, Richard B.; West, Allen; Revay, Zsolt; Hagstrum, Jonathon T,; Belgya, Thomas; Hee, Shane S. Que; Smith, Alan R.

    2010-02-27

    We have uncovered a thin layer of magnetic grains and microspherules, carbon spherules, and glass-like carbon at nine sites across North America, a site in Belgium, and throughout the rims of 16 Carolina Bays. It is consistent with the ejecta layer from an impact event and has been dated to 12.9 ka BP coinciding with the onset of Younger Dryas (YD) cooling and widespread megafaunal extinctions in North America. At many locations the impact layer is directly below a black mat marking the sudden disappearance of the megafauna and Clovis people. The distribution pattern of the Younger Dryas boundary (YDB) ejecta layer is consistent with an impact near the Great Lakes that deposited terrestrial-like ejecta near the impact site and unusual, titanium-rich projectile-like ejecta further away. High water content associated with the ejecta, up to 28 at. percent hydrogen (H), suggests the impact occurred over the Laurentide Ice Sheet. YDB microspherules and magnetic grains are highly enriched in TiO{sub 2}. Magnetic grains from several sites are enriched in iridium (Ir), up to 117 ppb. The TiO{sub 2}/FeO, K/Th, TiO{sub 2}/Zr, Al{sub 2}O{sub 3}/FeO+MgO, CaO/Al{sub 2}O{sub 3}, REE/ chondrite, FeO/MnO ratios and SiO{sub 2}, Na{sub 2}O, K{sub 2}O, Cr{sub 2}O{sub 3}, Ni, Co, U, Th and other trace element abundances are inconsistent with all terrestrial and extraterrestrial (ET) sources except for KREEP, a lunar igneous rock rich in potassium (K), rare-earth elements (REE), phosphorus (P), and other incompatible elements including U and Th. Normal Fe, Ti, and {sup 238}U/{sup 235}U isotopic abundances were found in the magnetic grains, but {sup 234}U was enriched over equilibrium values by 50 percent in Murray Springs and by 130 percent in Belgium. 40K abundance is enriched by up to 100 percent in YDB sediments and Clovis chert artifacts. Highly vesicular carbon spherules containing nanodiamonds, glass-like carbon, charcoal and soot found in large quantities in the YDB layer are

  17. Discontinuous non-equilibrium phase transition in a threshold Schloegl model for autocatalysis: Generic two-phase coexistence and metastability

    SciTech Connect (OSTI)

    Wang, Chi -Jen; Liu, Da -Jiang; Evans, James W.

    2015-04-28

    Threshold versions of Schloegl’s model on a lattice, which involve autocatalytic creation and spontaneous annihilation of particles, can provide a simple prototype for discontinuous non-equilibrium phase transitions. These models are equivalent to so-called threshold contact processes. A discontinuous transition between populated and vacuum states can occur selecting a threshold of N ≥ 2 for the minimum number, N, of neighboring particles enabling autocatalytic creation at an empty site. Fundamental open questions remain given the lack of a thermodynamic framework for analysis. For a square lattice with N = 2, we show that phase coexistence occurs not at a unique value but for a finite range of particle annihilation rate (the natural control parameter). This generic two-phase coexistence also persists when perturbing the model to allow spontaneous particle creation. Such behavior contrasts both the Gibbs phase rule for thermodynamic systems and also previous analysis for this model. We find metastability near the transition corresponding to a non-zero effective line tension, also contrasting previously suggested critical behavior. As a result, mean-field type analysis, extended to treat spatially heterogeneous states, further elucidates model behavior.

  18. Discontinuous non-equilibrium phase transition in a threshold Schloegl model for autocatalysis: Generic two-phase coexistence and metastability

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Chi -Jen; Liu, Da -Jiang; Evans, James W.

    2015-04-28

    Threshold versions of Schloegl’s model on a lattice, which involve autocatalytic creation and spontaneous annihilation of particles, can provide a simple prototype for discontinuous non-equilibrium phase transitions. These models are equivalent to so-called threshold contact processes. A discontinuous transition between populated and vacuum states can occur selecting a threshold of N ≥ 2 for the minimum number, N, of neighboring particles enabling autocatalytic creation at an empty site. Fundamental open questions remain given the lack of a thermodynamic framework for analysis. For a square lattice with N = 2, we show that phase coexistence occurs not at a unique valuemore » but for a finite range of particle annihilation rate (the natural control parameter). This generic two-phase coexistence also persists when perturbing the model to allow spontaneous particle creation. Such behavior contrasts both the Gibbs phase rule for thermodynamic systems and also previous analysis for this model. We find metastability near the transition corresponding to a non-zero effective line tension, also contrasting previously suggested critical behavior. As a result, mean-field type analysis, extended to treat spatially heterogeneous states, further elucidates model behavior.« less

  19. High thermal conductivity lossy dielectric using a multi layer configuration

    DOE Patents [OSTI]

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-01-01

    Systems and methods are described for loss dielectrics. A loss dielectric includes at least one high dielectric loss layer and at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. A method of manufacturing a loss dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. The systems and methods provide advantages because the loss dielectrics are less costly and more environmentally friendly than the available alternatives.

  20. Method of transferring a thin crystalline semiconductor layer

    DOE Patents [OSTI]

    Nastasi, Michael A.; Shao, Lin; Theodore, N. David

    2006-12-26

    A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

  1. Buffer layers on metal alloy substrates for superconducting tapes

    DOE Patents [OSTI]

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-06-29

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

  2. Surface segregation as a means of gettering Cu in liquid-phase-epitaxy silicon thin layers grown from Al-Cu-Si solutions

    SciTech Connect (OSTI)

    Wang, T.H.; Ciszek, T.F.; Reedy, R.; Asher, S.; King, D.

    1996-05-01

    The authors demonstrate that, by using the natural surface segregation phenomenon, Cu can be gettered to the surface from the bulk of silicon layers so that its concentrations in the liquid-phase-epitaxy (LPE) layers are much lower than its solubility at the layer growth temperature and the reported 10{sup 17} cm{sup {minus}3} degradation threshold for solar-cell performance. Secondary-ion mass spectroscopy (SIMS) analysis indicates that, within a micron-deep sub-surface region, Cu accumulates even in as-grown LPE samples. Slower cooling after growth to room temperature enhances this Cu enrichment. X-ray photoelectron spectroscopy (XPS) measurement shows as much as 3.2% Cu in a surface region of about 50 {Angstrom}. More surface-sensitive, ion-scattering spectroscopy (ISS) analysis further reveals about 7% of Cu at the top surface. These results translate to an areal gettering capacity of about 1.0 x 10{sup 16} cm{sup {minus}2}, which is higher than the available total-area density of Cu in the layer and substrate (3.6 x 10{sup 15} cm{sup {minus}2} for a uniform 1.2 x 10{sup 17}cm{sup {minus}3} Cu throughout the layer and substrate with a total thickness of 300 {mu}m).

  3. MultiLayer solid electrolyte for lithium thin film batteries...

    Office of Scientific and Technical Information (OSTI)

    Patent: MultiLayer solid electrolyte for lithium thin film batteries Citation Details In-Document Search Title: MultiLayer solid electrolyte for lithium thin film batteries A ...

  4. Method of depositing buffer layers on biaxially textured metal...

    Office of Scientific and Technical Information (OSTI)

    eu; gd; tb; tm; resup1subx; resup2sub1-xsub2; osub3; buffer; layer; deposited; sol-gel; metal-organic; decomposition; laminate; article; layer; ybco; resup1subx; ...

  5. Solvothermal Thin Film Deposition of Electron Blocking Layers | ANSER

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Center | Argonne-Northwestern National Laboratory Solvothermal Thin Film Deposition of Electron Blocking Layers Home > Research > ANSER Research Highlights > Solvothermal Thin Film Deposition of Electron Blocking Layers

  6. Layered zeolite materials and methods related thereto

    DOE Patents [OSTI]

    Tsapatsis, Michael; Maheshwari, Sudeep; Bates, Frank S; Koros, William J

    2013-08-06

    A novel oxide material (MIN-I) comprising YO.sub.2; and X.sub.2O.sub.3, wherein Y is a tetravalent element and X is a trivalent element, wherein X/Y=O or Y/X=30 to 100 is provided. Surprisingly, MIN-I can be reversibly deswollen. MIN-I can further be combined with a polymer to produce a nanocomposite, depolymerized to produce predominantly fully exfoliated layers (MIN-2), and pillared to produce a pillared oxide material (MIN-3), analogous to MCM-36. The materials are useful in a wide range of applications, such as catalysts, thin films, membranes, and coatings.

  7. Bursting frequency prediction in turbulent boundary layers

    SciTech Connect (OSTI)

    LIOU,WILLIAM W.; FANG,YICHUNG

    2000-02-01

    The frequencies of the bursting events associated with the streamwise coherent structures of spatially developing incompressible turbulent boundary layers were predicted using global numerical solution of the Orr-Sommerfeld and the vertical vorticity equations of hydrodynamic stability problems. The structures were modeled as wavelike disturbances associated with the turbulent mean flow. The global method developed here involves the use of second and fourth order accurate finite difference formula for the differential equations as well as the boundary conditions. An automated prediction tool, BURFIT, was developed. The predicted resonance frequencies were found to agree very well with previous results using a local shooting technique and measured data.

  8. Buffer layers and articles for electronic devices

    DOE Patents [OSTI]

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  9. Counting graphene layers with very slow electrons

    SciTech Connect (OSTI)

    Frank, Lud?k; Mikmekov, Elika; Mllerov, Ilona; Lejeune, Michal

    2015-01-05

    The study aimed at collection of data regarding the transmissivity of freestanding graphene for electrons across their full energy scale down to the lowest energies. Here, we show that the electron transmissivity of graphene drops with the decreasing energy of the electrons and remains below 10% for energies below 30?eV, and that the slow electron transmissivity value is suitable for reliable determination of the number of graphene layers. Moreover, electrons incident below 50?eV release adsorbed hydrocarbon molecules and effectively clean graphene in contrast to faster electrons that decompose these molecules and create carbonaceous contamination.

  10. Ruthenium / aerogel nanocomposits via Atomic Layer Deposition

    SciTech Connect (OSTI)

    Biener, J; Baumann, T F; Wang, Y; Nelson, E J; Kucheyev, S O; Hamza, A V; Kemell, M; Ritala, M; Leskela, M

    2006-08-28

    We present a general approach to prepare metal/aerogel nanocomposites via template directed atomic layer deposition (ALD). In particular, we used a Ru ALD process consisting of alternating exposures to bis(cyclopentadienyl)ruthenium (RuCp{sub 2}) and air at 350 C to deposit metallic Ru nanoparticles on the internal surfaces of carbon and silica aerogels. The process does not affect the morphology of the aerogel template and offers excellent control over metal loading by simply adjusting the number of ALD cycles. We also discuss the limitations of our ALD approach, and suggest ways to overcome these.

  11. Engineering Glass Passivation Layers -Model Results

    SciTech Connect (OSTI)

    Skorski, Daniel C.; Ryan, Joseph V.; Strachan, Denis M.; Lepry, William C.

    2011-08-08

    The immobilization of radioactive waste into glass waste forms is a baseline process of nuclear waste management not only in the United States, but worldwide. The rate of radionuclide release from these glasses is a critical measure of the quality of the waste form. Over long-term tests and using extrapolations of ancient analogues, it has been shown that well designed glasses exhibit a dissolution rate that quickly decreases to a slow residual rate for the lifetime of the glass. The mechanistic cause of this decreased corrosion rate is a subject of debate, with one of the major theories suggesting that the decrease is caused by the formation of corrosion products in such a manner as to present a diffusion barrier on the surface of the glass. Although there is much evidence of this type of mechanism, there has been no attempt to engineer the effect to maximize the passivating qualities of the corrosion products. This study represents the first attempt to engineer the creation of passivating phases on the surface of glasses. Our approach utilizes interactions between the dissolving glass and elements from the disposal environment to create impermeable capping layers. By drawing from other corrosion studies in areas where passivation layers have been successfully engineered to protect the bulk material, we present here a report on mineral phases that are likely have a morphological tendency to encrust the surface of the glass. Our modeling has focused on using the AFCI glass system in a carbonate, sulfate, and phosphate rich environment. We evaluate the minerals predicted to form to determine the likelihood of the formation of a protective layer on the surface of the glass. We have also modeled individual ions in solutions vs. pH and the addition of aluminum and silicon. These results allow us to understand the pH and ion concentration dependence of mineral formation. We have determined that iron minerals are likely to form a complete incrustation layer and we plan

  12. Underpotential deposition-mediated layer-by-layer growth of thin films

    DOE Patents [OSTI]

    Wang, Jia Xu; Adzic, Radoslav R.

    2015-05-19

    A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

  13. Current-voltage characteristics of layer-by-layer self-assembled colloidal thin films

    SciTech Connect (OSTI)

    Jafri, S. H. M.; Dutta, J.; Sweatman, D.; Sharma, A. B.

    2006-09-25

    Self-organized construction of advanced materials and devices has been carried out starting with tailor-made colloidal nanoparticles as building blocks. Multilayer thin films of gold nanoparticles stabilized by glutamates and zinc sulfide nanoparticles capped with chitosan were self-organized by a modified polyelectrolyte deposition process. Resistive current-voltage characteristic was observed in devices (less than 50 layers). The conduction onset in thicker devices (>50 layers) was found to be at applied voltages of {approx}1.6, {approx}1.94, and {approx}2.79 V for 75, 100, and 150 layer structures, respectively. Devices exhibit similar behavior in forward and reverse biases and the electrical characteristics were repeatable.

  14. Layered method of electrode for solid oxide electrochemical cells

    DOE Patents [OSTI]

    Jensen, Russell R. (Murrysville, PA)

    1991-07-30

    A process for fabricating a fuel electrode comprising: slurry dipping to form layers which are structurally graded from all or mostly all stabilized zirconia at a first layer, to an outer most layer of substantially all metal powder, such an nickel. Higher performaance fuel electrodes may be achieved if sinter active stabilized zirconia doped for electronic conductivity is used.

  15. Thin layer chromatography residue applicator sampler

    DOE Patents [OSTI]

    Nunes, Peter J.; Kelly, Fredrick R.; Haas, Jeffrey S.; Andresen, Brian D.

    2007-07-24

    A thin layer chromatograph residue applicator sampler. The residue applicator sampler provides for rapid analysis of samples containing high explosives, chemical warfare, and other analyses of interest under field conditions. This satisfied the need for a field-deployable, small, hand-held, all-in-one device for efficient sampling, sample dissolution, and sample application to an analytical technique. The residue applicator sampler includes a sampling sponge that is resistant to most chemicals and is fastened via a plastic handle in a hermetically sealed tube containing a known amount of solvent. Upon use, the wetted sponge is removed from the sealed tube and used as a swiping device across an environmental sample. The sponge is then replaced in the hermetically sealed tube where the sample remains contained and dissolved in the solvent. A small pipette tip is removably contained in the hermetically sealed tube. The sponge is removed and placed into the pipette tip where a squeezing-out of the dissolved sample from the sponge into the pipette tip results in a droplet captured in a vial for later instrumental analysis, or applied directly to a thin layer chromatography plate for immediate analysis.

  16. Electron holography of devices with epitaxial layers

    SciTech Connect (OSTI)

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0}?=?12.75?V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge}?=?18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L?=?30?nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  17. Nano-indentation of single-layer optical oxide thin films grown by electron-beam deposition

    SciTech Connect (OSTI)

    Mehrotra, K.; Oliver, J. B.; Lambropoulos, J. C.

    2015-01-01

    Mechanical characterization of optical oxide thin films is performed using nano-indentation, and the results are explained based on the deposition conditions used. These oxide films are generally deposited to have a porous microstructure that optimizes laser induced damage thresholds, but changes in deposition conditions lead to varying degrees of porosity, density, and possibly the microstructure of the thin film. This can directly explain the differences in the mechanical properties of the film studied here and those reported in literature. Of the four single-layer thin films tested, alumina was observed to demonstrate the highest values of nano-indentation hardness and elastic modulus. This is likely a result of the dense microstructure of the thin film arising from the particular deposition conditions used.

  18. Performance of High-Convergence, Layered DT Implosions on Power-Scaling Experiments at National Ignition Facility

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Smalyuk, V. A.; Atherton, L. J.; Benedetti, L. R.; Bionta, R.; Bleuel, D.; Bond, E.; Bradley, D. K.; Caggiano, J.; Callahan, D. A.; Casey, D. T.; et al

    2013-10-19

    The radiation-driven, low-adiabat, cryogenic DT layered plastic capsule implosions were carried out on the National Ignition Facility (NIF) to study the sensitivity of performance to peak power and drive duration. An implosion with extended drive and at reduced peak power of 350 TW achieved the highest compression with fuel areal density of ~1.3±0.1 g/cm 2, representing a significant step from previously measured ~1.0 g/cm2 toward a goal of 1.5 g/cm 2. Moreover, for future experiments will focus on understanding and mitigating hydrodynamic instabilities and mix, and improving symmetry required to reach the threshold for thermonuclear ignition on NIF.

  19. Performance of High-Convergence, Layered DT Implosions on Power-Scaling Experiments at National Ignition Facility

    SciTech Connect (OSTI)

    Smalyuk, V. A.; Atherton, L. J.; Benedetti, L. R.; Bionta, R.; Bleuel, D.; Bond, E.; Bradley, D. K.; Caggiano, J.; Callahan, D. A.; Casey, D. T.; Celliers, P. M.; Cerjan, C. J.; Clark, D.; Dewald, E. L.; Dixit, S. N.; Doeppner, T.; Edgell, D. H.; Edwards, M. J.; Frenje, J.; Gatu-Johnson, M.; Glebov, V. Y.; Glenn, S.; Glenzer, S. H.; Grim, G.; Haan, S. W.; Hammel, B. A.; Hartouni, E.; Hatarik, R.; Hatchett, S.; Hicks, D.; Hsing, W. W.; Izumi, N.; Jones, O. S.; Key, M. H.; Khan, S. F.; Kilkenny, J. D.; Kline, J. L.; Knauer, J.; Kyrala, G. A.; Landen, O. L.; Pape, S. L.; Lindl, J. D.; Ma, T.; MacGowan, B. J.; Mackinnon, A. J.; MacPhee, A. G.; McNaney, J.; Meezan, N. B.; Moody, J. D.; Moore, A.; Moran, M.; Moses, E. I.; Pak, A.; Parham, T; Park, H. -S.; Patel, P. K.; Petrasso, R.; Ralph, J. E.; Regan, S. P.; Remington, B. A.; Robey, H. F.; Ross, J. S.; Spears, B. K.; Springer, P. T.; Suter, L J; Tommasini, R.; Town, R. P.; Weber, S. V.; Widmann, K.

    2013-10-19

    The radiation-driven, low-adiabat, cryogenic DT layered plastic capsule implosions were carried out on the National Ignition Facility (NIF) to study the sensitivity of performance to peak power and drive duration. An implosion with extended drive and at reduced peak power of 350 TW achieved the highest compression with fuel areal density of ~1.3±0.1 g/cm 2, representing a significant step from previously measured ~1.0 g/cm2 toward a goal of 1.5 g/cm 2. Moreover, for future experiments will focus on understanding and mitigating hydrodynamic instabilities and mix, and improving symmetry required to reach the threshold for thermonuclear ignition on NIF.

  20. Method of forming buried oxide layers in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  1. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

    2004-08-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

  2. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  3. Buffer layers for REBCO films for use in superconducting devices

    DOE Patents [OSTI]

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  4. An Approach to Industrial Stormwater Benchmarks: Establishing and Using Site-Specific Threshold Criteria at Lawrence Livermore National Laboratory

    SciTech Connect (OSTI)

    Campbell, C G; Mathews, S

    2006-09-07

    Current regulatory schemes use generic or industrial sector specific benchmarks to evaluate the quality of industrial stormwater discharges. While benchmarks can be a useful tool for facility stormwater managers in evaluating the quality stormwater runoff, benchmarks typically do not take into account site-specific conditions, such as: soil chemistry, atmospheric deposition, seasonal changes in water source, and upstream land use. Failing to account for these factors may lead to unnecessary costs to trace a source of natural variation, or potentially missing a significant local water quality problem. Site-specific water quality thresholds, established upon the statistical evaluation of historic data take into account these factors, are a better tool for the direct evaluation of runoff quality, and a more cost-effective trigger to investigate anomalous results. Lawrence Livermore National Laboratory (LLNL), a federal facility, established stormwater monitoring programs to comply with the requirements of the industrial stormwater permit and Department of Energy orders, which require the evaluation of the impact of effluent discharges on the environment. LLNL recognized the need to create a tool to evaluate and manage stormwater quality that would allow analysts to identify trends in stormwater quality and recognize anomalous results so that trace-back and corrective actions could be initiated. LLNL created the site-specific water quality threshold tool to better understand the nature of the stormwater influent and effluent, to establish a technical basis for determining when facility operations might be impacting the quality of stormwater discharges, and to provide ''action levels'' to initiate follow-up to analytical results. The threshold criteria were based on a statistical analysis of the historic stormwater monitoring data and a review of relevant water quality objectives.

  5. Redox Active Layer-by-Layer Structures containing MnO2 Nanoparticles

    SciTech Connect (OSTI)

    Bazito, Fernanda; O'Brien, Robert; Buttry, Daniel A.

    2005-02-01

    Nanoscale materials provide unique properties that will enable new technologies and enhance older ones. One area of intense activity in which nanoscale materials are being used is in the development of new functional materials for battery applications. This effort promises superior materials with properties that circumvent many of the problems associated with traditional battery materials. Previously we have worked on several approaches for using nanoscale materials for application as cathode materials in rechargeable Li batteries. Our recent work has focused on synthesizing MnO2 nanoparticles and using these in layer-by-layer (LbL) structures to probe the redox properties of the nanoparticles. We show that the aqueous colloidal nanoparticles produced by butanol reduction of tetramethylammonium permanganate can be trapped in thin films using a layer-by-layer deposition approach, and that these films are both redox active and exhibit kinetically facile electrochemical responses. We show cyclic voltammetry of MnO2 colloidal nanoparticles entrapped in a LbL thin film at an ITO electrode surface using poly(diallyldimethylammonium chloride) (PDDA). CV experiments demonstrate that Li+ insertion accompanies Mn(IV) reduction in LiClO4 supporting electrolytes, and that reduction is hindered in supporting electrolytes containing only tetrabutylammonium cations. We also show that electron propagation through multilayer films is facile, suggesting that electrons percolate through the films via electron exchange between nanoparticles.

  6. Layer-by-layer and intrinsic analysis of molecular and thermodynamic properties across soft interfaces

    SciTech Connect (OSTI)

    Sega, Marcello; Jedlovszky, Pál

    2015-09-21

    Interfaces are ubiquitous objects, whose thermodynamic behavior we only recently started to understand at the microscopic detail. Here, we borrow concepts from the techniques of surface identification and intrinsic analysis, to provide a complementary point of view on the density, stress, energy, and free energy distribution across liquid (“soft”) interfaces by analyzing the respective contributions coming from successive layers.

  7. {sup 16}O resonances near 4? threshold through {sup 12}C({sup 6}Li,d) reaction

    SciTech Connect (OSTI)

    Rodrigues, M. R. D.; Borello-Lewin, T.; Miyake, H.; Horodynski-Matsushigue, L. B.; Duarte, J. L. M.; Rodrigues, C. L.; Faria, P. Neto de; Cunsolo, A.; Cappuzzello, F.; Foti, A.; Agodi, C.; Cavallaro, M.; Napoli, M. di; Ukita, G. M.

    2014-11-11

    Several narrow alpha resonant {sup 16}O states were detected through the {sup 12}C({sup 6}Li,d) reaction, in the range of 13.5 to 17.5 MeV of excitation energy. The reaction was measured at a bombarding energy of 25.5 MeV employing the So Paulo Pelletron-Enge-Spectrograph facility and the nuclear emulsion technique. Experimental angular distributions associated with natural parity quasi-bound states around the 4? threshold are presented and compared to DWBA predictions. The upper limit for the resonance widths obtained is near the energy resolution (15 keV)

  8. Resonance {eta} Prime -meson photoproduction on protons at photon energies from the reaction threshold to 3700 MeV

    SciTech Connect (OSTI)

    Tryasuchev, V. A.

    2013-06-15

    The parameters of six resonances of the isobar model for {eta} Prime -meson photoproduction were fitted to experimental differential cross sections for the reaction {gamma}{pi} {yields} {eta} Prime p that weremeasured by the CLAS-2009 and CBELSA/TAPS Collaborations (Mainz, Germany). It was shown that, in the photon energy region from the reaction threshold to 3700MeV, a good description of the experimental cross sections was attained by taking into account the contributions of high-angular-momenta heavy resonances alone.

  9. Investigation of photoneutron reactions close to and above the neutron emission threshold in the rare earth region

    SciTech Connect (OSTI)

    Hasper, J.; Mueller, S.; Savran, D.; Schnorrenberger, L.; Sonnabend, K.; Zilges, A.

    2008-01-15

    We have investigated the photoneutron cross section of the isotopes {sup 148,150}Nd, {sup 154}Sm, and {sup 154,160}Gd close to the neutron emission threshold in photoactivation experiments at the superconducting Darmstadt electron linear accelerator S-DALINAC. Naturally composed targets were activated with a high-intensity bremsstrahlung beam at various energies and the reaction yields have been determined by measuring the activity of the produced radioactive isotopes with HPGe detectors. The results are compared to two different statistical model calculations.

  10. Domain imaging on multiferroic BiFeO{sub 3}(001) by linear and circular dichroism in threshold photoemission

    SciTech Connect (OSTI)

    Sander, Anke; Christl, Maik; Chiang, Cheng-Tien; Alexe, Marin; Widdra, Wolf

    2015-12-14

    We demonstrate ferroelectric domain imaging at BiFeO{sub 3}(001) single crystal surfaces with laser-based threshold photoemission electron microscopy (PEEM). Work function differences and linear dichroism allow for the identification of the eight independent ferroelectric domain configurations in the PEEM images. There, the determined domain structure is consistent with piezoresponse force microscopy of the sample surface and can also be related to the circular dichroic PEEM images. Our results provide a method for efficient mapping of complex ferroelectric domains with laser-excited PEEM and may allow lab-based time-resolved studies of the domain dynamics in the future.

  11. Combining multi-layered bitmap files using network specific hardware

    DOE Patents [OSTI]

    DuBois, David H.; DuBois, Andrew J.; Davenport, Carolyn Connor

    2012-02-28

    Images and video can be produced by compositing or alpha blending a group of image layers or video layers. Increasing resolution or the number of layers results in increased computational demands. As such, the available computational resources limit the images and videos that can be produced. A computational architecture in which the image layers are packetized and streamed through processors can be easily scaled so to handle many image layers and high resolutions. The image layers are packetized to produce packet streams. The packets in the streams are received, placed in queues, and processed. For alpha blending, ingress queues receive the packetized image layers which are then z sorted and sent to egress queues. The egress queue packets are alpha blended to produce an output image or video.

  12. Organic photovoltaic cell incorporating electron conducting exciton blocking layers

    SciTech Connect (OSTI)

    Forrest, Stephen R.; Lassiter, Brian E.

    2014-08-26

    The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to an analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.

  13. Fabrication of Ceramic Layer-by-Layer Infrared Wavelength Photonic Band Gap Crystals

    SciTech Connect (OSTI)

    Henry Hao-Chuan Kang

    2004-12-19

    Photonic band gap (PBG) crystals, also known as photonic crystals, are periodic dielectric structures which form a photonic band gap that prohibit the propagation of electromagnetic (EM) waves of certain frequencies at any incident angles. Photonic crystals have several potential applications including zero-threshold semiconductor lasers, the inhibition of spontaneous emission, dielectric mirrors, and wavelength filters. If defect states are introduced in the crystals, light can be guided from one location to another or even a sharp bending of light in micron scale can be achieved. This generates the potential for optical waveguide and optical circuits, which will contribute to the improvement in the fiber-optic communications and the development of high-speed computers.

  14. Investigation on the damage threshold of films coated on various silicate, fluorophosphate and phosphate laser glasses. Final report, January 1, 1979-August 29, 1980

    SciTech Connect (OSTI)

    Nakajima, Y; Izumitani, T

    1980-01-01

    Effects of substrate laser glass on the damage threshold and adhesion of dielectric films has been studied in order to improve the damage threshold. The study is divided into two parts: the first part dealing with four types of laser glass, LSG-91H silicate, LHG-8 phosphate, P-1 phosphate and LHG-10 fluorophosphate; the second part dealing with twenty-six glasses with systematically modified compositions in three glass systems, silicate, phosphate and fluorophosphate.

  15. Carbides composite surface layers produced by (PTA)

    SciTech Connect (OSTI)

    Tajoure, Meloud; Tajouri, Ali E-mail: dr.mokhtarphd@yahoo.com; Abuzriba, Mokhtar E-mail: dr.mokhtarphd@yahoo.com; Akreem, Mosbah

    2013-12-16

    The plasma transferred arc technique was applied to deposit a composite layer of nickel base with tungsten carbide in powder form on to surface of low alloy steel 18G2A type according to polish standard. Results showed that, plasma transferred arc hard facing process was successfully conducted by using Deloro alloy 22 plus tungsten carbide powders. Maximum hardness of 1489 HV and minimum dilution of 8.4 % were achieved by using an arc current of 60 A. However, when the current was further increased to 120 A and the dilution increases with current increase while the hardness decreases. Microstructure of the nickel base deposit with tungsten carbide features uniform distribution of reinforcement particles with regular grain shape half - dissolved in the matrix.

  16. Cleaning graphene with a titanium sacrificial layer

    SciTech Connect (OSTI)

    Joiner, C. A. Roy, T.; Hesabi, Z. R.; Vogel, E. M.; Chakrabarti, B.

    2014-06-02

    Graphene is a promising material for future electronic applications and chemical vapor deposition of graphene on copper is a promising method for synthesizing graphene on the wafer scale. The processing of such graphene films into electronic devices introduces a variety of contaminants which can be difficult to remove. An approach to cleaning residues from the graphene channel is presented in which a thin layer of titanium is deposited via thermal e-beam evaporation and immediately removed. This procedure does not damage the graphene as evidenced by Raman spectroscopy, greatly enhances the electrical performance of the fabricated graphene field effect transistors, and completely removes the chemical residues from the surface of the graphene channel as evidenced by x-ray photoelectron spectroscopy.

  17. Hand portable thin-layer chromatography system

    DOE Patents [OSTI]

    Haas, Jeffrey S.; Kelly, Fredrick R.; Bushman, John F.; Wiefel, Michael H.; Jensen, Wayne A.

    2000-01-01

    A hand portable, field-deployable thin-layer chromatography (TLC) unit and a hand portable, battery-operated unit for development, illumination, and data acquisition of the TLC plates contain many miniaturized features that permit a large number of samples to be processed efficiently. The TLC unit includes a solvent tank, a holder for TLC plates, and a variety of tool chambers for storing TLC plates, solvent, and pipettes. After processing in the TLC unit, a TLC plate is positioned in a collapsible illumination box, where the box and a CCD camera are optically aligned for optimal pixel resolution of the CCD images of the TLC plate. The TLC system includes an improved development chamber for chemical development of TLC plates that prevents solvent overflow.

  18. Layered electrodes for lithium cells and batteries

    DOE Patents [OSTI]

    Johnson, Christopher S.; Thackeray, Michael M.; Vaughey, John T.; Kahaian, Arthur J.; Kim, Jeom-Soo

    2008-04-15

    Lithium metal oxide compounds of nominal formula Li.sub.2MO.sub.2, in which M represents two or more positively charged metal ions, selected predominantly and preferably from the first row of transition metals are disclosed herein. The Li.sub.2MO.sub.2 compounds have a layered-type structure, which can be used as positive electrodes for lithium electrochemical cells, or as a precursor for the in-situ electrochemical fabrication of LiMO.sub.2 electrodes. The Li.sub.2MO.sub.2 compounds of the invention may have additional functions in lithium cells, for example, as end-of-discharge indicators, or as negative electrodes for lithium cells.

  19. Hydrogen Diffusion through Multiple Packaging Layers

    SciTech Connect (OSTI)

    McAllister, J.; Mohiuddin, A.

    2010-05-05

    For this scenario, hydrogen is generated in a container that is eventually stored within a drum or some type of long range storage container. When preparing for long-term storage, the hydrogen container (HC) is placed in a plastic bag (PB1). The PB1 is then placed inside an inner drum (ID). The ID is placed inside a plastic bag (PB2) which is then placed within an outer drum (OD). One or more ODs are then storage is a large container (LC). Filtered vents or vent holes are located on all the container barriers to prevent pressurization and allow gases to flow in and out of the HC. The LC is vented to the atmosphere with four vent paths for this example. The source of hydrogen generation for this study is not important. Any source that generates hydrogen in elemental form (i.e., H{sub 2}) is a candidate for the purposes of this generic evaluation. The released hydrogen accumulates inside the waste packaging. Depending on the permeability of the packaging layers, some of the accumulated hydrogen may diffuse out of the packaging layers and into the space surrounding the drums. Since the drums are confined in the LC, the hydrogen accumulates in the LC as it did inside the drums if venting of the LC does not occur. If accumulation in the LC is allowed without venting, the confinement is eventually breached or the hydrogen is consumed by reaction with other chemical species. One possible reaction is combustion with oxygen. Such a reaction can be explosive, and from this possibility arises the safety concern.

  20. Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

    SciTech Connect (OSTI)

    Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H.

    2015-07-20

    Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

  1. Precision Measurement of the p(e, e´p) π⁰ Reaction at Threshold

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chirapatpimol, K.; Shabestari, M.H.; Lindgren, R. A.; Smith, L. C.; Annand, J. R. M.; Higinbotham, D. W.; Moffit, B.

    2015-05-01

    New results are reported from a measurement ofmore » $$\\pi^0$$ electroproduction near threshold using the p(e, e´p) π⁰ reaction. The experiment was designed to determine precisely the energy dependence of $s-$ and $p-$wave electromagnetic multipoles as a stringent test of the predictions of Chiral Perturbation Theory (ChPT). The data were taken with an electron beam energy of 1192 MeV using a two-spectrometer setup in Hall A at Jefferson Lab. For the first time, complete coverage of the $$\\phi^*_{\\pi}$$ and $$\\theta^*_{\\pi}$$ angles in the $$p \\pi^0$$ center-of-mass was obtained for invariant energies above threshold from 0.5 MeV up to 15 MeV. The 4-momentum transfer $Q^2$ coverage ranges from 0.05 to 0.155 (GeV/c)$^2$ in fine steps. A simple phenomenological analysis of our data shows strong disagreement with $p-$wave predictions from ChPT for $Q^2>0.07$ (GeV/c)$^2$, while the $s-$wave predictions are in reasonable agreement.« less

  2. Production of K⁺K⁻ pairs in proton-proton collisions below the Φ meson threshold

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ye, Q. J.; Hartmann, M.; Chiladze, D.; Dymov, S.; Dzyuba, A.; Gao, H.; Gebel, R.; Hejny, V.; Kacharava, A.; Lorentz, B.; et al

    2013-06-12

    The pp→ppK⁺K⁻ reaction was measured below the Φ threshold at a beam energy of 2.568 GeV using the COSY-ANKE magnetic spectrometer. By assuming that the four-body phase space is distorted only by the product of two-body final-state interactions, fits to a variety of one-dimensional distributions permit the evaluation of differential and total cross sections. The shapes of the distributions in the Kp and Kpp invariant masses are reproduced only if the K⁻p interaction is even stronger than that found at higher energy. The cusp effect in the K⁺K⁻ distribution at the K⁰K¯¯¯⁰ threshold is much more clear and some evidencemore » is also found for coupling between the K⁻p and K¯¯¯⁰n channels. However, the energy dependence of the total cross section cannot be reproduced by considering only a simple product of such pairwise final-state interactions.« less

  3. Ultralow-threshold laser and blue shift cooperative luminescence in a Yb{sup 3+} doped silica microsphere

    SciTech Connect (OSTI)

    Huang, Yantang Huang, Yu; Zhang, Peijin; Guo, Changlei; Department of Electronic Engineering, Institute of Optoelectronic Technology, Xiamen University, Xiamen, 361005

    2014-02-15

    An experimental investigation on ultralow threshold laser and blue shift cooperative luminescence (CL) in a Yb{sup 3+} doped silica microsphere (YDSM) with continuous-wave 976 nm laser diode pumping is reported. The experimental results show that the YDSM emits laser oscillation with ultralow threshold of 2.62 ?W, and the laser spectrum is modulated by the microsphere morphology characteristics. In addition, blue emission of YDSM is also observed with the increase of pump power, which is supposed to be generated by CL of excited Yb ion-pairs with the absorption of 976 nm photons and Si-O vibration phonons, and the process is explained with an energy level diagram. This property of the blue shift CL with phonons absorption in the Yb{sup 3+}doped microcavity makes it attractive for the application of laser cooling based on anti-Stokes fluorescence emission, if the Yb{sup 3+}doped microcavity made from with low phonon energy host materials.

  4. Precision Measurement of the p(e, e´p) π⁰ Reaction at Threshold

    SciTech Connect (OSTI)

    Chirapatpimol, K.; Shabestari, M.H.; Lindgren, R. A.; Smith, L. C.; Annand, J. R. M.; Higinbotham, D. W.; Moffit, B.

    2015-05-01

    New results are reported from a measurement of $\\pi^0$ electroproduction near threshold using the p(e, e´p) π⁰ reaction. The experiment was designed to determine precisely the energy dependence of $s-$ and $p-$wave electromagnetic multipoles as a stringent test of the predictions of Chiral Perturbation Theory (ChPT). The data were taken with an electron beam energy of 1192 MeV using a two-spectrometer setup in Hall A at Jefferson Lab. For the first time, complete coverage of the $\\phi^*_{\\pi}$ and $\\theta^*_{\\pi}$ angles in the $p \\pi^0$ center-of-mass was obtained for invariant energies above threshold from 0.5 MeV up to 15 MeV. The 4-momentum transfer $Q^2$ coverage ranges from 0.05 to 0.155 (GeV/c)$^2$ in fine steps. A simple phenomenological analysis of our data shows strong disagreement with $p-$wave predictions from ChPT for $Q^2>0.07$ (GeV/c)$^2$, while the $s-$wave predictions are in reasonable agreement.

  5. Rare earth zirconium oxide buffer layers on metal substrates

    DOE Patents [OSTI]

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  6. Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer

    SciTech Connect (OSTI)

    El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Okyay, Ali K.

    2014-07-21

    A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage V{sub t} shift (4?V) at low operating voltage (6/?6?V), good retention (>10 yr), and good endurance characteristic (>10{sup 4} cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced V{sub t} shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger V{sub t} shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E???5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications.

  7. Enhanced memory effect via quantum confinement in 16?nm InN nanoparticles embedded in ZnO charge trapping layer

    SciTech Connect (OSTI)

    El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Orta, Blend; Alevli, Mustafa; Dietz, Nikolaus; Okyay, Ali K.

    2014-06-23

    In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al{sub 2}O{sub 3} layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V{sub gate} measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4?V, the memory shows a noticeable threshold voltage (V{sub t}) shift of 2?V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10?V, a memory window of 5?V is achieved and the V{sub t} shift direction indicates that electrons tunnel from channel to charge storage layer.

  8. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    DOE Patents [OSTI]

    Wang, Qingwu; Li, Wenguang; Jiang, Hua

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  9. ARM - Field Campaign - LASIC: Layered Atlantic Smoke Interactions with

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Clouds govCampaignsLASIC: Layered Atlantic Smoke Interactions with Clouds Campaign Links Science Plan Backgrounder Baseline Instruments and Data Plots Total Carbon Column Observing Network (TCCON) Ascension Island Site TCCON Ascension Data News & Press ARM Data Discovery Browse Data Related Campaigns LASIC: Layered Atlantic Smoke Interactions with Clouds - Cloud Radar at St. Helena 2017.08.01, Zuidema, AMF LASIC: Layered Atlantic Smoke Interactions with Clouds - Supplemental Measurements

  10. Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Ozone | Argonne National Laboratory Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Title Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Publication Type Journal Article Year of Publication 2016 Authors Mane, AU, Allen, AJ, Kanjolia, RK, Elam, JW Journal Journal of Physical Chemistry C Volume 120 Start Page 9874 Issue 18 Pagination 10 Date Published 04182016 Abstract We investigated the atomic layer deposition (ALD)

  11. Corrosion protected, multi-layer fuel cell interface

    DOE Patents [OSTI]

    Feigenbaum, Haim; Pudick, Sheldon; Wang, Chiu L.

    1986-01-01

    An improved interface configuration for use between adjacent elements of a fuel cell stack. The interface is impervious to gas and liquid and provides resistance to corrosion by the electrolyte of the fuel cell. The multi-layer configuration for the interface comprises a non-cupreous metal-coated metallic element to which is film-bonded a conductive layer by hot pressing a resin therebetween. The multi-layer arrangement provides bridging electrical contact.

  12. Encapsulation methods and dielectric layers for organic electrical devices

    DOE Patents [OSTI]

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  13. Experimentally excellent beaming in a two-layer dielectric structure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tasolamprou, Anna C.; Zhang, Lei; Kafesaki, Maria; Koschny, Thomas; Soukoulis, Costas M.

    2014-09-15

    We demonstrate both experimentally and theoretically that a two-layer dielectric structure can provide collimation and enhanced transmission of a Gaussian beam passing through it. This is due to formation of surface localized states along the layered structure and the coupling of these states to outgoing propagating waves. As a result, a system of multiple cascading two-layers can sustain the beaming for large propagation distances.

  14. Methods for making thin layers of crystalline materials

    DOE Patents [OSTI]

    Lagally, Max G; Paskiewicz, Deborah M; Tanto, Boy

    2013-07-23

    Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

  15. Dual ion beam assisted deposition of biaxially textured template layers

    DOE Patents [OSTI]

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  16. Coronal electron confinement by double layers

    SciTech Connect (OSTI)

    Li, T. C.; Drake, J. F.; Swisdak, M.

    2013-12-01

    In observations of flare-heated electrons in the solar corona, a longstanding problem is the unexplained prolonged lifetime of the electrons compared to their transit time across the source. This suggests confinement. Recent particle-in-cell (PIC) simulations, which explored the transport of pre-accelerated hot electrons through ambient cold plasma, showed that the formation of a highly localized electrostatic potential drop, in the form of a double layer (DL), significantly inhibited the transport of hot electrons. The effectiveness of confinement by a DL is linked to the strength of the DL as defined by its potential drop. In this work, we investigate the scaling of the DL strength with the hot electron temperature by PIC simulations and find a linear scaling. We demonstrate that the strength is limited by the formation of parallel shocks. Based on this, we analytically determine the maximum DL strength, and also find a linear scaling with the hot electron temperature. The DL strength obtained from the analytic calculation is comparable to that from the simulations. At the maximum strength, the DL is capable of confining a significant fraction of hot electrons in the source.

  17. Melanin as an active layer in biosensors

    SciTech Connect (OSTI)

    Piacenti da Silva, Marina Congiu, Mirko Oliveira Graeff, Carlos Frederico de; Fernandes, Jssica Colnaghi Biziak de Figueiredo, Natlia Mulato, Marcelo

    2014-03-15

    The development of pH sensors is of great interest due to its extensive application in several areas such as industrial processes, biochemistry and particularly medical diagnostics. In this study, the pH sensing properties of an extended gate field effect transistor (EGFET) based on melanin thin films as active layer are investigated and the physical mechanisms related to the device operation are discussed. Thin films were produced from different melanin precursors on indium tin oxide (ITO) and gold substrates and were investigated by Atomic Force Microscopy and Electrochemical Impedance Spectroscopy. Experiments were performed in the pH range from 2 to 12. EGFETs with melanin deposited on ITO and on gold substrates showed sensitivities ranging from 31.3 mV/pH to 48.9 mV/pH, depending on the melanin precursor and the substrate used. The pH detection is associated with specific binding sites in its structure, hydroxyl groups and quinone imine.

  18. ARM - Field Campaign - 2013 Lower Atmospheric Boundary Layer...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lower Atmospheric Boundary Layer Experiment 2012.09.17, Turner, SGP Comments? We would ... Lead Scientist : David Turner For data sets, see below. Abstract Instruments were deployed ...

  19. Aqueous proton transfer across single-layer graphene (Journal...

    Office of Scientific and Technical Information (OSTI)

    Proton transfer across single-layer graphene proceeds with large computed energy barriers and is thought to be unfavourable at room temperature unless nanoscale holes or dopants ...

  20. Permafrost and organic layer interactions over a climate gradient...

    Office of Scientific and Technical Information (OSTI)

    in permafrost occurrence (PF) and organic layer thickness (OLT) in more than 3000 soil pedons across a mean annual temperature (MAT) gradient. Cause and effect relationships...

  1. Method of depositing buffer layers on biaxially textured metal substrates

    DOE Patents [OSTI]

    Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

    2002-08-27

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  2. Atomic Layer Deposition for Stabilization of Amorphous Silicon...

    Broader source: Energy.gov (indexed) [DOE]

    More Documents & Publications Nanostructured Metal Oxide Anodes Atomic Layer Deposition for Stabilization of Silicon Anodes Development of Industrially Viable Battery Electrode ...

  3. ARM - PI Product - Planetary Boundary Layer from AERI and MPL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ProductsPlanetary Boundary Layer from AERI and MPL ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send PI Product : Planetary Boundary Layer from AERI and MPL The distribution and transport of aerosol emitted to the lower troposphere is governed by the height of the planetary boundary layer (PBL), which limits the dilution of pollutants and influences boundary-layer convection. Because radiative heating and cooling of

  4. Nano-sized structured layered positive electrode materials to...

    Office of Scientific and Technical Information (OSTI)

    positive electrode materials to enable high energy density and high rate capability lithium batteries Title: Nano-sized structured layered positive electrode materials to ...

  5. Simulations of Cyclic Voltammetry for Electric Double Layers...

    Office of Scientific and Technical Information (OSTI)

    Simulations of Cyclic Voltammetry for Electric Double Layers in Asymmetric Electrolytes: A Generalized Modified PoissonNernstPlanck Model Citation Details In-Document Search...

  6. "Lidar Investigations of Aerosol, Cloud, and Boundary Layer Properties...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: "Lidar Investigations of Aerosol, Cloud, and Boundary Layer Properties Over the ARM ACRF Sites" Citation Details In-Document Search Title: "Lidar Investigations ...

  7. Low cost fuel cell diffusion layer configured for optimized anode...

    Office of Scientific and Technical Information (OSTI)

    for optimized anode water management Citation Details In-Document Search Title: Low cost fuel cell diffusion layer configured for optimized anode water management A fuel cell ...

  8. Atomic Layer Deposition and in Situ Characterization of Ultraclean...

    Office of Scientific and Technical Information (OSTI)

    Hydroxide Citation Details In-Document Search Title: Atomic Layer Deposition and in Situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide Authors: Kozen,...

  9. Planetary Boundary Layer from AERI and MPL (Dataset) | Data Explorer

    Office of Scientific and Technical Information (OSTI)

    Because radiative heating and cooling of the surface strongly affect the PBL top height, ... thus improve model parameterizations and our understanding of boundary-layer processes. ...

  10. Scientist finds new way to predict heat layer troublemaker |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientist finds new way to predict heat layer troublemaker By John Greenwald August 27, ... But heat inevitably flows through the system and becomes separated, or scraped off, from ...

  11. Layered Electrodes for Lithium Cells and Batteries | Argonne...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electrodes for Lithium Cells and Batteries Technology available for licensing: Layered lithium metal oxide compounds for ultra-high-capacity, rechargeable cathodes Lowers cost to ...

  12. Observation of Ordered Structures in Counterion Layers near Wet...

    Office of Scientific and Technical Information (OSTI)

    Title: Observation of Ordered Structures in Counterion Layers near Wet Charged Surfaces: A Potential Mechanism for Charge Inversion Authors: Miller, Mitchell ; Chu, Miaoqi ; Lin, ...

  13. Electroless Atomic Layer Deposition: A Scalable Approach to Surface...

    Office of Scientific and Technical Information (OSTI)

    Title: Electroless Atomic Layer Deposition: A Scalable Approach to Surface Modified Metal Powders. Abstract not provided. Authors: Cappillino, Patrick ; Robinson, David ; El Gabaly ...

  14. Process for synthesis of a layered oxide cathode composition

    DOE Patents [OSTI]

    Petrovic, Ivan; Thurston, Anthony; Sheargold, Stephen

    2015-03-31

    A method for preparing a layered oxide cathode using a two step calcination procedure, wherein the first step includes pre-calcination utilizing a rotary calciner.

  15. Atomic layer engineering for chemically sharp oxide heterointerfaces...

    Office of Scientific and Technical Information (OSTI)

    Title: Atomic layer engineering for chemically sharp oxide heterointerfaces Authors: Choi, Woo Seok 1 ; Rouleau, Christopher M 1 ; Seo, Sung Seok A 1 ; Eres, Gyula 1 ; Lee, ...

  16. Method of fabricating a solar cell with a tunnel dielectric layer

    SciTech Connect (OSTI)

    Dennis, Tim; Harrington, Scott; Manning, Jane; Smith, David D.; Waldhauer, Ann

    2015-08-18

    Method of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

  17. Method of fabricating a solar cell with a tunnel dielectric layer

    DOE Patents [OSTI]

    Dennis, Tim; Harrington, Scott; Manning, Jane; Smith, David D; Waldhauer, Ann

    2014-04-29

    Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

  18. Method of fabricating a solar cell with a tunnel dielectric layer

    DOE Patents [OSTI]

    Dennis, Tim; Harrington, Scott; Manning, Jane; Smith, David; Waldhauer, Ann

    2012-12-18

    Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

  19. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

    DOE Patents [OSTI]

    Albright, Scot P.; Chamberlin, Rhodes R.

    1996-03-26

    A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

  20. Evaluate Si Layers: Cooperative Research and Development Final Report, CRADA Number CRD-07-255

    SciTech Connect (OSTI)

    Teplin, C.

    2013-04-01

    Evaluate Si layers based on heteroepitaxial Si growth on RABITS textured metal substrates coated with textured buffer layers.

  1. Threshold Photoelectron Photoion Coincidence (TPEPICO) Studies: The Road to ? 0.1 kJ/mol Thermochemistry

    SciTech Connect (OSTI)

    Baer, Tomas

    2013-10-14

    The threshold photoelectron photoion coincidence (TPEPICO) technique is utilized to investigate the dissociation dynamics and thermochemistry of energy selected medium to large organic molecular ions. The reactions include parallel and consecutive steps that are modeled with the statistical theory in order to extract dissociation onsets for multiple dissociation paths. These studies are carried out with the aid of molecular orbital calculations of both ions and the transition states connecting the ion structure to their products. The results of these investigations yield accurate heats of formation of ions, free radicals, and stable molecules. In addition, they provide information about the potential energy surface that governs the dissociation process. Isomerization reactions prior to dissociation are readily inferred from the TPEPICO data.

  2. Measurement of the tradeoff between intrinsic emittance and quantum efficiency from a NaKSb photocathode near threshold

    SciTech Connect (OSTI)

    Maxson, Jared Cultrera, Luca; Gulliford, Colwyn; Bazarov, Ivan

    2015-06-08

    We measure the tradeoff between the quantum efficiency and intrinsic emittance from a NaKSb photocathode at three increasing wavelengths (635, 650, and 690 nm) at or below the energy of the bandgap plus the electron affinity, hν≤E{sub g}+E{sub a}. These measurements were performed using a high voltage dc gun for varied photocathode surface fields of 1.4−4.4 MV/m. Measurements of intrinsic emittance are performed using two different methods and were found to agree. At the longest wavelength available, 690 nm, the intrinsic emittance was 0.26 μm/mm-rms with a quantum efficiency of ∼10{sup −4}. The suitability of NaKSb emitting at threshold for various low emittance applications is discussed.

  3. Measurement of the generalized form factors near threshold via γ*p → nπ+ at high Q2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Park, K.; Adhikari, K. P.; Adikaram, D.; Anghinolfi, M.; Baghdasaryan, H.; Ball, J.; Battaglieri, M.; Batourine, V.; Bedlinskiy, I.; Bennett, R. P.; et al

    2012-03-26

    We report the first extraction of the pion-nucleon multipoles near the production threshold for the nπ+ channel at relatively high momentum transfer (Q2 up to 4.2 GeV2). The dominance of the s-wave transverse multipole (E0+), expected in this region, allowed us to access the generalized form factor G1 within the light-cone sum rule (LCSR) framework as well as the axial form factor GA. The data analyzed in this work were collected by the nearly 4π CEBAF Large Acceptance Spectrometer (CLAS) using a 5.754-GeV electron beam on a proton target. The differential cross section and the π-N multipole E0+/GD were measuredmore »using two different methods, the LCSR and a direct multipole fit. The results from the two methods are found to be consistent and almost Q2 independent.« less

  4. Threshold of photoelectron emission from CN{sub x} films deposited at room temperature and at 500 deg. C

    SciTech Connect (OSTI)

    Sago, Genki; Li Wanyan; Goto, Keisuke; Ichikawa, Yo; Ishida, Yoshihisa; Kohiki, Shigemi

    2004-10-15

    The threshold of photoelectron emission was measured for amorphous CN{sub x} films deposited at room temperature (RT) and at 500 deg. C. The x values of the films deposited at RT and at 500 deg. C by magnetron sputtering of a graphite target in a mixed N{sub 2}/Ar gas were 0.6 and 0.3, respectively. Ratios of the sp{sup 2}- to sp{sup 3}-hybridized components of both C and N for the film deposited at 500 deg. C were larger by {approx_equal}4 times than those for the film deposited at RT. The onsets of the electron emission by photon irradiation were 5.0 and 4.7 eV for the films deposited at RT and at 500 deg. C, respectively.

  5. Measurement of the generalized form factors near threshold via γ*p → nπ+ at high Q2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Park, K.; Adhikari, K. P.; Adikaram, D.; Anghinolfi, M.; Baghdasaryan, H.; Ball, J.; Battaglieri, M.; Batourine, V.; Bedlinskiy, I.; Bennett, R. P.; et al

    2012-03-26

    We report the first extraction of the pion-nucleon multipoles near the production threshold for the nπ+ channel at relatively high momentum transfer (Q2 up to 4.2 GeV2). The dominance of the s-wave transverse multipole (E0+), expected in this region, allowed us to access the generalized form factor G1 within the light-cone sum rule (LCSR) framework as well as the axial form factor GA. The data analyzed in this work were collected by the nearly 4π CEBAF Large Acceptance Spectrometer (CLAS) using a 5.754-GeV electron beam on a proton target. The differential cross section and the π-N multipole E0+/GD were measuredmore » using two different methods, the LCSR and a direct multipole fit. The results from the two methods are found to be consistent and almost Q2 independent.« less

  6. The effect of the hole injection layer on the performance of single layer organic light-emitting diodes

    SciTech Connect (OSTI)

    Wenjin, Zeng; Ran, Bi; Hongmei, Zhang E-mail: iamwhuang@njupt.edu.cn; Wei, Huang E-mail: iamwhuang@njupt.edu.cn

    2014-12-14

    Efficient single-layer organic light-emitting diodes (OLEDs) were reported based on a green fluorescent dye 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7tetramethyl-1H,5H,11H-(1) benzopyropyrano (6,7-8-I,j)quinolizin-11-one (C545T). Herein, poly(3,4-ethylenedioxy thiophene) poly(styrene sulfonate) were, respectively, applied as the injection layer for comparison. The hole transport properties of the emission layer with different hole injection materials are well investigated via current-voltage measurement. It was clearly found that the hole injection layers (HILs) play an important role in the adjustment of the electron/hole injection to attain transport balance of charge carriers in the single emission layer of OLEDs with electron-transporting host. The layer of tris-(8-hydroxyquinoline) aluminum played a dual role of host and electron-transporting materials within the emission layer. Therefore, appropriate selection of hole injection layer is a key factor to achieve high efficiency OLEDs with single emission layer.

  7. Acute phytotoxicity of seven metals alone and in mixture: Are Italian soil threshold concentrations suitable for plant protection?

    SciTech Connect (OSTI)

    Baderna, Diego Lomazzi, Eleonora; Pogliaghi, Alberto; Ciaccia, Gianluca; Lodi, Marco; Benfenati, Emilio

    2015-07-15

    Metals can pollute soils in both urban and rural areas with severe impacts on the health of humans, plants and animals living there. Information on metal toxicity is therefore important for ecotoxicology. This study investigated the phytotoxicity of different metals frequently found as pollutants in soils: arsenic, cadmium, chromium, lead, mercury, nickel and zinc. Cucumber (Cucumis sativus), sorghum (Sorghum saccharatum) and cress (Lepidium sativum) seeds were used as models for other plants used in human nutrition such as cereals, rice, fruits and vegetables. The 72-h germination rate and root elongations were selected as short-term ecotoxicological endpoints in seeds exposed to single metals and mixtures. Metals were spiked onto OECD standard soils in concentrations comparable to current Italian contamination threshold concentrations for residential and commercial soils. Arsenic, chromium, mercury and nickel were the most toxic metals in our experimental conditions, particularly to cress seeds (5.172, 152 and 255.4 mg/kg as 72 h IC50 for arsenic, mercury and nickel respectively). Italian limits were acceptable for plant protection only for exposure to each metal alone but not for the mixtures containing all the metals concentrations expected by their respective legislative threshold. The effects of the mixture were class-specific: trends were comparable in dicots but different in monocots. The response induced by the mixture at high concentrations differed from that theoretically obtainable by summing the effects of the individual metals. This might be due to partial antagonism of the metals in soil or to the formation of complexes between the metals, which reduce the bioavailability of the pollutants for plants. - Graphical abstract: Metals investigated: Arsenic, Cadmium, Chromium, Lead, Mercury, Nickel and Zinc. - Highlights: • The short-term phytotoxicity of seven metals was investigated with 3 higher plants. • Italian limits for arsenic and nickel in

  8. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  9. Multi-layer laminate structure and manufacturing method

    SciTech Connect (OSTI)

    Keenihan, James R.; Cleereman, Robert J.; Eurich, Gerald; Graham, Andrew T.; Langmaid, Joe A.

    2012-04-24

    The present invention is premised upon a multi-layer laminate structure and method of manufacture, more particularly to a method of constructing the multi-layer laminate structure utilizing a laminate frame and at least one energy activated flowable polymer.

  10. Multi-layer laminate structure and manufacturing method

    DOE Patents [OSTI]

    Keenihan, James R.; Cleereman, Robert J.; Eurich, Gerald; Graham, Andrew T.; Langmaid, Joe A.

    2013-01-29

    The present invention is premised upon a multi-layer laminate structure and method of manufacture, more particularly to a method of constructing the multi-layer laminate structure utilizing a laminate frame and at least one energy activated flowable polymer.

  11. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOE Patents [OSTI]

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  12. Photovoltaic device comprising compositionally graded intrinsic photoactive layer

    DOE Patents [OSTI]

    Hoffbauer, Mark A; Williamson, Todd L

    2013-04-30

    Photovoltaic devices and methods of making photovoltaic devices comprising at least one compositionally graded photoactive layer, said method comprising providing a substrate; growing onto the substrate a uniform intrinsic photoactive layer having one surface disposed upon the substrate and an opposing second surface, said intrinsic photoactive layer consisting essentially of In.sub.1-xA.sub.xN,; wherein: i. 0.ltoreq.x.ltoreq.1; ii. A is gallium, aluminum, or combinations thereof; and iii. x is at least 0 on one surface of the intrinsic photoactive layer and is compositionally graded throughout the layer to reach a value of 1 or less on the opposing second surface of the layer; wherein said intrinsic photoactive layer is isothermally grown by means of energetic neutral atom beam lithography and epitaxy at a temperature of 600.degree. C. or less using neutral nitrogen atoms having a kinetic energy of from about 1.0 eV to about 5.0 eV, and wherein the intrinsic photoactive layer is grown at a rate of from about 5 nm/min to about 100 nm/min.

  13. Integrated circuit with dissipative layer for photogenerated carriers

    DOE Patents [OSTI]

    Myers, D.R.

    1988-04-20

    The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissipative layer of silicon nitride between a silicon substrate and the active device. Free carriers generated in the substrate are dissipated by the layer before they can build up charge on the active device. 1 fig.

  14. Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

    DOE Patents [OSTI]

    Thompson, Mark E.; Li, Jian; Forrest, Stephen; Rand, Barry

    2011-02-22

    An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

  15. Electroluminescent apparatus having a structured luminescence conversion layer

    DOE Patents [OSTI]

    Krummacher, Benjamin Claus

    2008-09-02

    An apparatus such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains color-changing and non-color-changing regions arranged in a particular pattern.

  16. Mitigation of substrate defects in reticles using multilayer buffer layers

    DOE Patents [OSTI]

    Mirkarimi, Paul B.; Bajt, Sasa; Stearns, Daniel G.

    2001-01-01

    A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.

  17. MultiLayer solid electrolyte for lithium thin film batteries

    DOE Patents [OSTI]

    Lee, Se -Hee; Tracy, C. Edwin; Pitts, John Roland; Liu, Ping

    2015-07-28

    A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

  18. Solder for oxide layer-building metals and alloys

    DOE Patents [OSTI]

    Kronberg, J.W.

    1992-09-15

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  19. Solder for oxide layer-building metals and alloys

    DOE Patents [OSTI]

    Kronberg, James W.

    1992-01-01

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  20. Lubricant-infused nanoparticulate coatings assembled by layer-by-layer deposition

    SciTech Connect (OSTI)

    Sunny, Steffi; Vogel, Nicolas; Howell, Caitlin; Vu, Thy L.; Aizenberg, Joanna

    2014-09-01

    Omniphobic coatings are designed to repel a wide range of liquids without leaving stains on the surface. A practical coating should exhibit stable repellency, show no interference with color or transparency of the underlying substrate and, ideally, be deposited in a simple process on arbitrarily shaped surfaces. We use layer-by-layer (LbL) deposition of negatively charged silica nanoparticles and positively charged polyelectrolytes to create nanoscale surface structures that are further surface-functionalized with fluorinated silanes and infiltrated with fluorinated oil, forming a smooth, highly repellent coating on surfaces of different materials and shapes. We show that four or more LbL cycles introduce sufficient surface roughness to effectively immobilize the lubricant into the nanoporous coating and provide a stable liquid interface that repels water, low-surface-tension liquids and complex fluids. The absence of hierarchical structures and the small size of the silica nanoparticles enables complete transparency of the coating, with light transmittance exceeding that of normal glass. The coating is mechanically robust, maintains its repellency after exposure to continuous flow for several days and prevents adsorption of streptavidin as a model protein. As a result, the LbL process is conceptually simple, of low cost, environmentally benign, scalable, automatable and therefore may present an efficient synthetic route to non-fouling materials.

  1. Lubricant-infused nanoparticulate coatings assembled by layer-by-layer deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sunny, Steffi; Vogel, Nicolas; Howell, Caitlin; Vu, Thy L.; Aizenberg, Joanna

    2014-09-01

    Omniphobic coatings are designed to repel a wide range of liquids without leaving stains on the surface. A practical coating should exhibit stable repellency, show no interference with color or transparency of the underlying substrate and, ideally, be deposited in a simple process on arbitrarily shaped surfaces. We use layer-by-layer (LbL) deposition of negatively charged silica nanoparticles and positively charged polyelectrolytes to create nanoscale surface structures that are further surface-functionalized with fluorinated silanes and infiltrated with fluorinated oil, forming a smooth, highly repellent coating on surfaces of different materials and shapes. We show that four or more LbL cycles introducemore » sufficient surface roughness to effectively immobilize the lubricant into the nanoporous coating and provide a stable liquid interface that repels water, low-surface-tension liquids and complex fluids. The absence of hierarchical structures and the small size of the silica nanoparticles enables complete transparency of the coating, with light transmittance exceeding that of normal glass. The coating is mechanically robust, maintains its repellency after exposure to continuous flow for several days and prevents adsorption of streptavidin as a model protein. As a result, the LbL process is conceptually simple, of low cost, environmentally benign, scalable, automatable and therefore may present an efficient synthetic route to non-fouling materials.« less

  2. Lubricant-Infused Nanoparticulate Coatings Assembled by Layer-by-Layer Deposition

    SciTech Connect (OSTI)

    Sunny, S; Vogel, N; Howell, C; Vu, TL; Aizenberg, J

    2014-09-01

    Omniphobic coatings are designed to repel a wide range of liquids without leaving stains on the surface. A practical coating should exhibit stable repellency, show no interference with color or transparency of the underlying substrate and, ideally, be deposited in a simple process on arbitrarily shaped surfaces. We use layer-by-layer (LbL) deposition of negatively charged silica nanoparticles and positively charged polyelectrolytes to create nanoscale surface structures that are further surface-functionalized with fluorinated silanes and infiltrated with fluorinated oil, forming a smooth, highly repellent coating on surfaces of different materials and shapes. We show that four or more LbL cycles introduce sufficient surface roughness to effectively immobilize the lubricant into the nanoporous coating and provide a stable liquid interface that repels water, low-surface-tension liquids and complex fluids. The absence of hierarchical structures and the small size of the silica nanoparticles enables complete transparency of the coating, with light transmittance exceeding that of normal glass. The coating is mechanically robust, maintains its repellency after exposure to continuous flow for several days and prevents adsorption of streptavidin as a model protein. The LbL process is conceptually simple, of low cost, environmentally benign, scalable, automatable and therefore may present an efficient synthetic route to non-fouling materials.

  3. Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

    SciTech Connect (OSTI)

    Zeng, X. E-mail: dmitri.boiko@csem.ch; Stadelmann, T.; Grossmann, S.; Hoogerwerf, A. C.; Boko, D. L. E-mail: dmitri.boiko@csem.ch; Sulmoni, L.; Lamy, J.-M.; Grandjean, N.

    2015-02-16

    In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injected photons.

  4. NMR of thin layers using a meanderline surface coil

    DOE Patents [OSTI]

    Cowgill, Donald F.

    2001-01-01

    A miniature meanderline sensor coil which extends the capabilities of nuclear magnetic resonance (NMR) to provide analysis of thin planar samples and surface layer geometries. The sensor coil allows standard NMR techniques to be used to examine thin planar (or curved) layers, extending NMRs utility to many problems of modern interest. This technique can be used to examine contact layers, non-destructively depth profile into films, or image multiple layers in a 3-dimensional sense. It lends itself to high resolution NMR techniques of magic angle spinning and thus can be used to examine the bonding and electronic structure in layered materials or to observe the chemistry associated with aging coatings. Coupling this sensor coil technology with an arrangement of small magnets will produce a penetrator probe for remote in-situ chemical analysis of groundwater or contaminant sediments. Alternatively, the sensor coil can be further miniaturized to provide sub-micron depth resolution within thin films or to orthoscopically examine living tissue. This thin-layer NMR technique using a stationary meanderline coil in a series-resonant circuit has been demonstrated and it has been determined that the flat meanderline geometry has about he same detection sensitivity as a solenoidal coil, but is specifically tailored to examine planar material layers, while avoiding signals from the bulk.

  5. Ocean Barrier Layers Effect on Tropical Cyclone Intensification

    SciTech Connect (OSTI)

    Balaguru, Karthik; Chang, P.; Saravanan, R.; Leung, Lai-Yung R.; Xu, Zhao; Li, M.; Hsieh, J.

    2012-09-04

    Improving a tropical cyclone's forecast and mitigating its destructive potential requires knowledge of various environmental factors that influence the cyclone's path and intensity. Herein, using a combination of observations and model simulations, we systematically demonstrate that tropical cyclone intensification is significantly affected by salinity-induced barrier layers, which are 'quasi-permanent' features in the upper tropical oceans. When tropical cyclones pass over regions with barrier layers, the increased stratification and stability within the layer reduce storm-induced vertical mixing and sea surface temperature cooling. This causes an increase in enthalpy flux from the ocean to the atmosphere and, consequently, an intensification of tropical cyclones. On average, the tropical cyclone intensification rate is nearly 50% higher over regions with barrier layers, compared to regions without. Our finding, which underscores the importance of observing not only the upper-ocean thermal structure but also the salinity structure in deep tropical barrier layer regions, may be a key to more skillful predictions of tropical cyclone intensities through improved ocean state estimates and simulations of barrier layer processes. As the hydrological cycle responds to global warming, any associated changes in the barrier layer distribution must be considered in projecting future tropical cyclone activity.

  6. Methods for improved growth of group III nitride buffer layers

    DOE Patents [OSTI]

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  7. Schottky barrier contrasts in single and bi-layer graphene contacts for MoS{sub 2} field-effect transistors

    SciTech Connect (OSTI)

    Du, Hyewon; Kim, Taekwang; Shin, Somyeong; Kim, Dahye; Seo, Sunae; Kim, Hakseong; Lee, Sang Wook; Sung, Ji Ho; Jo, Moon-Ho; Lee, Myoung Jae; Seo, David H.

    2015-12-07

    We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS{sub 2} transistors. Ti-MoS{sub 2}-graphene heterojunction transistors using both single-layer MoS{sub 2} (1M) and 4-layer MoS{sub 2} (4M) were fabricated in order to compare graphene electrodes with commonly used Ti electrodes. MoS{sub 2}-graphene Schottky barrier provided electron injection efficiency up to 130 times higher in the subthreshold regime when compared with MoS{sub 2}-Ti, which resulted in V{sub DS} polarity dependence of device parameters such as threshold voltage (V{sub TH}) and subthreshold swing (SS). Comparing single-layer graphene (SG) with bi-layer graphene (BG) in 4M devices, SG electrodes exhibited enhanced device performance with higher on/off ratio and increased field-effect mobility (μ{sub FE}) due to more sensitive Fermi level shift by gate voltage. Meanwhile, in the strongly accumulated regime, we observed opposing behavior depending on MoS{sub 2} thickness for both SG and BG contacts. Differential conductance (σ{sub d}) of 1M increases with V{sub DS} irrespective of V{sub DS} polarity, while σ{sub d} of 4M ceases monotonic growth at positive V{sub DS} values transitioning to ohmic-like contact formation. Nevertheless, the low absolute value of σ{sub d} saturation of the 4M-graphene junction demonstrates that graphene electrode could be unfavorable for high current carrying transistors.

  8. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOE Patents [OSTI]

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2001-01-01

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  9. ARM - Field Campaign - Stable Boundary Layer Education (StaBLE)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govCampaignsStable Boundary Layer Education (StaBLE) Campaign Links Final Campaign Summary ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Stable Boundary Layer Education (StaBLE) 2011.10.01 - 2014.05.31 Lead Scientist : David Turner For data sets, see below. Abstract The properties and processing in the nocturnal stable boundary layer are not well understood, which makes it difficult to represent

  10. USE OF ATOMIC LAYER DEPOSITION OF FUNCTIONALIZATION OF NANOPOROUS BIOMATERIALS

    SciTech Connect (OSTI)

    Brigmon, R.; Narayan, R.; Adiga, S.; Pellin, M.; Curtiss, L.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N.; Elam, J.

    2010-02-08

    Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials.

  11. Initial experience with the CDF layer 00 silicon detector

    SciTech Connect (OSTI)

    C. Hill

    2003-03-17

    We report on initial experience with the CDF Layer 00 Detector. Layer 00 is an innovative, low-mass, silicon detector installed in CDF during the upgrade for Run 2A of the Tevatron. Noise pickup present during operation at CDF is discussed. An event-by-event pedestal correction implemented by CDF is presented. This off-line solution prevents L00 from being used in the current incarnation of the on-line displaced track trigger. Preliminary performance of Layer 00 is described.

  12. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOE Patents [OSTI]

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2004-01-27

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  13. Electrodeposition of biaxially textured layers on a substrate

    DOE Patents [OSTI]

    Bhattacharya, Raghu N; Phok, Sovannary; Spagnol, Priscila; Chaudhuri, Tapas

    2013-11-19

    Methods of producing one or more biaxially textured layer on a substrate, and articles produced by the methods, are disclosed. An exemplary method may comprise electrodepositing on the substrate a precursor material selected from the group consisting of rare earths, transition metals, actinide, lanthanides, and oxides thereof. An exemplary article (150) may comprise a biaxially textured base material (130), and at least one biaxially textured layer (110) selected from the group consisting of rare earths, transition metals, actinides, lanthanides, and oxides thereof. The at least one biaxially textured layer (110) is formed by electrodeposition on the biaxially textured base material (130).

  14. Delaminations of thin layers by high dose hydrogen ion implantation in silicon. Formation of thin silicon on insulator silicon layers

    SciTech Connect (OSTI)

    Hara, Tohru; Onda, Takayuki; Kakizaki, Yasuo; Oshima, Sotaro; Kitamura, Taira; Kajiyama, Kenji; Yoneda, Tomoaki; Sekine, Kohei; Inoue, Morio

    1996-08-01

    The delamination of a thin layer from a Si wafer by high dose H{sup +} implantation has been studied. This process is applicable to the manufacture of Si on insulator wafers. Hydrogen ions are implanted into (100) p-Si through a 100 nm thick oxide layer at 100 keV with doses of 1.0 {times} 10{sup 16} and 1.0 {times} 10{sup 17} ion/cm{sup 2}. The implanted layer is measured by 1.5 MeV He{sup +} Rutherford backscattering spectrometry aligned spectra and by cross-sectional transmission electron microscopy after annealing. With annealing at 600 C, delamination of the Si layer, which occurred parallel to the surface, could be observed clearly at a depth of 0.85 {micro}m for a dose of 1.0 {times} 10{sup 17} ion/cm{sup 2}. The gap of the split Si layer is 20--30 nm wide. The roughness of the split layer surface is 7.5 nm. Point defects at the split layer surface decreased with annealing at high temperatures.

  15. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  16. Correction of the near threshold behavior of electron collisional excitation cross-sections in the plane-wave Born approximation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kilcrease, D. P.; Brookes, S.

    2013-08-19

    The modeling of NLTE plasmas requires the solution of population rate equations to determine the populations of the various atomic levels relevant to a particular problem. The equations require many cross sections for excitation, de-excitation, ionization and recombination. Additionally, a simple and computational fast way to calculate electron collisional excitation cross-sections for ions is by using the plane-wave Born approximation. This is essentially a high-energy approximation and the cross section suffers from the unphysical problem of going to zero near threshold. Various remedies for this problem have been employed with varying degrees of success. We present a correction procedure formore » the Born cross-sections that employs the Elwert–Sommerfeld factor to correct for the use of plane waves instead of Coulomb waves in an attempt to produce a cross-section similar to that from using the more time consuming Coulomb Born approximation. We compare this new approximation with other, often employed correction procedures. Furthermore, we also look at some further modifications to our Born Elwert procedure and its combination with Y.K. Kim's correction of the Coulomb Born approximation for singly charged ions that more accurately approximate convergent close coupling calculations.« less

  17. A semi-analytic power balance model for low (L) to high (H) mode transition power threshold

    SciTech Connect (OSTI)

    Singh, R., E-mail: rsingh129@yahoo.co.in [WCI Center for Fusion Theory, National Fusion Research Institute, Daejeon 305-333 (Korea, Republic of); Institute for Plasma Research, Bhat Gandhinagar 2382 428 (India); Jhang, Hogun [WCI Center for Fusion Theory, National Fusion Research Institute, Daejeon 305-333 (Korea, Republic of); Kaw, P. K. [Institute for Plasma Research, Bhat Gandhinagar 2382 428 (India); Diamond, P. H. [WCI Center for Fusion Theory, National Fusion Research Institute, Daejeon 305-333 (Korea, Republic of); Center for Momentum Transport and Flow Organization, University of California, San Diego, California 92093 (United States); Center for Astrophysics and Space Sciences, University of California, San Diego, 9500 Gilman Dr., La Jolla, California 92093-0424 (United States); Nordman, H. [Department of Earth and Space Sciences, Chalmers University of Technology, SE-412 96 Gteborg (Sweden); Bourdelle, C. [Euratom-CEA Association, CEA/DSM/DRFC, CEA Cadarache F-13108 Saint-Paul-Lez-Durance (France); Loarte, A. [ITER Organization, Route de Vinon Sur Verdon, A. 13115 Saint Paul Lez Durance (France)

    2014-06-15

    We present a semi-analytic model for low (L) to high (H) mode transition power threshold (P{sub th}). Two main assumptions are made in our study. First, high poloidal mode number drift resistive ballooning modes (high-m DRBM) are assumed to be the dominant turbulence driver in a narrow edge region near to last closed flux surface. Second, the pre-transition edge profile and turbulent diffusivity at the narrow edge region pertain to turbulent equipartition. An edge power balance relation is derived by calculating the dissipated power flux through both turbulent conduction and convection, and radiation in the edge region. P{sub th} is obtained by imposing the turbulence quench rule due to sheared E??B rotation. Evaluation of P{sub th} shows a good agreement with experimental results in existing machines. Increase of P{sub th} at low density (i.e., the existence of roll-over density in P{sub th} vs. density) is shown to originate from the longer scale length of the density profile than that of the temperature profile.

  18. Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm

    SciTech Connect (OSTI)

    Wang Haifeng; Huang Zhimeng; Zhang Dayong; Luo Fei; Huang Lixian; Li Yanglong; Luo Yongquan; Wang Weiping; Zhao Xiangjie

    2011-12-01

    Laser-induced-damage characteristics of commercial indium-tin oxide (ITO) films deposited by DC magnetron sputtering deposition on K9 glass substrates as a function of the film thickness have been studied at 1064 nm with a 10 ns laser pulse in the 1-on-1 mode, and the various mechanisms for thickness effect on laser-induced-damage threshold (LIDT) of the film have been discussed in detail. It is observed that laser-damage-resistance of ITO film shows dramatic thickness effect with the LIDT of the 50-nm ITO film 7.6 times as large as the value of 300 nm film, and the effect of depressed carrier density by decreasing the film thickness is demonstrated to be the primary reason. Our experiment findings indicate that searching transparent conductive oxide (TCO) film with low carrier density and high carrier mobility is an efficient technique to improve the laser-damage-resistance of TCO films based on maintaining their well electric conductivity.

  19. THE DISPERSION RELATIONS AND INSTABILITY THRESHOLDS OF OBLIQUE PLASMA MODES IN THE PRESENCE OF AN ION BEAM

    SciTech Connect (OSTI)

    Verscharen, Daniel; Chandran, Benjamin D. G. E-mail: benjamin.chandran@unh.edu

    2013-02-10

    An ion beam can destabilize Alfven/ion-cyclotron waves and magnetosonic/whistler waves if the beam speed is sufficiently large. Numerical solutions of the hot-plasma dispersion relation have previously shown that the minimum beam speed required to excite such instabilities is significantly smaller for oblique modes with k Multiplication-Sign B {sub 0} {ne} 0 than for parallel-propagating modes with k Multiplication-Sign B {sub 0} = 0, where k is the wavevector and B {sub 0} is the background magnetic field. In this paper, we explain this difference within the framework of quasilinear theory, focusing on low-{beta} plasmas. We begin by deriving, in the cold-plasma approximation, the dispersion relation and polarization properties of both oblique and parallel-propagating waves in the presence of an ion beam. We then show how the instability thresholds of the different wave branches can be deduced from the wave-particle resonance condition, the conservation of particle energy in the wave frame, the sign (positive or negative) of the wave energy, and the wave polarization. We also provide a graphical description of the different conditions under which Landau resonance and cyclotron resonance destabilize Alfven/ion-cyclotron waves in the presence of an ion beam. We draw upon our results to discuss the types of instabilities that may limit the differential flow of alpha particles in the solar wind.

  20. Stable thin film resistors using double layer structure

    SciTech Connect (OSTI)

    Jia, Q.X.; Lee, H.J.; Ma, E.; Anderson, W.A.; Collins, F.M.

    1995-06-01

    Highly stable bilayer thin film resistors, which consist of an underlying layer of tantalum nitride and of a capping layer of ruthenium oxide, were developed by taking advantage of the desired characteristics of two different materials in a single system. The resistors fabricated in such a way were highly stable under power loading or thermal cycling. Resistors with one digit temperature coefficient of resistance could be easily controlled by the layer thickness ratio of the tantalum nitride to the ruthenium oxide and the {ital ex} {ital situ} annealing temperature or duration. Auger electron spectroscopy depth profile on the thin films indicates that the ruthenium oxide layer is well defined for the as-deposited form. Nevertheless, interdiffusion takes place after thermal treatment of the bilayer which is used to tune the temperature coefficient of resistance and to stabilize the resistance of the resistors.

  1. Layered Atlantic Smoke Interactions with Clouds (LASIC) Science...

    Office of Scientific and Technical Information (OSTI)

    Many uncertainties contribute to the highly variable model radiation fields: the aging of ... layer, and how the low clouds adjust to smoke-radiation and smoke-cloud interactions. ...

  2. Percolation in a Proton Exchange Membrane Fuel Cell Catalyst Layer

    SciTech Connect (OSTI)

    Stacy, Stephen; Allen, Jeffrey

    2012-07-01

    Water management in the catalyst layers of proton exchange membrane fuel cells (PEMFC) is confronted by two issues, flooding and dry out, both of which result in improper functioning of the fuel cell and lead to poor performance and degradation. At the present time, the data that has been reported about water percolation and wettability within a fuel cell catalyst layer is limited. A method and apparatus for measuring the percolation pressure in the catalyst layer has been developed based upon an experimental apparatus used to test water percolation in porous transport layers (PTL). The experimental setup uses a pseudo Hele-Shaw type testing where samples are compressed and a fluid is injected into the sample. Testing the samples gives percolation pressure plots which show trends in increasing percolation pressure with an increase in flow rate. A decrease in pressure was seen as percolation occurred in one sample, however the pressure only had a rising effect in the other sample.

  3. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOE Patents [OSTI]

    Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

  4. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOE Patents [OSTI]

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-07-04

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

  5. Internal wave energy radiated from a turbulent mixed layer

    SciTech Connect (OSTI)

    Munroe, James R.; Sutherland, Bruce R.

    2014-09-15

    We examine mixed-layer deepening and the generation of internal waves in stratified fluid resulting from turbulence that develops in response to an applied surface stress. In laboratory experiments the stress is applied over the breadth of a finite-length tank by a moving roughened conveyor belt. The turbulence in the shear layer is characterized using particle image velocimetry to measure the kinetic energy density. The internal waves are measured using synthetic schlieren to determine their amplitudes, frequencies, and energy density. We also perform fully nonlinear numerical simulations restricted to two dimensions but in a horizontally periodic domain. These clearly demonstrate that internal waves are generated by transient eddies at the integral length scale of turbulence and which translate with the background shear along the base of the mixed layer. In both experiments and simulations we find that the energy density of the generated waves is 1%3% of the turbulent kinetic energy density of the turbulent layer.

  6. Buffer layers on biaxially textured metal substrates (Patent...

    Office of Scientific and Technical Information (OSTI)

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzingannealing in ...

  7. Lithium-ion batteries having conformal solid electrolyte layers

    DOE Patents [OSTI]

    Kim, Gi-Heon; Jung, Yoon Seok

    2014-05-27

    Hybrid solid-liquid electrolyte lithium-ion battery devices are disclosed. Certain devices comprise anodes and cathodes conformally coated with an electron insulating and lithium ion conductive solid electrolyte layer.

  8. High voltage switches having one or more floating conductor layers

    DOE Patents [OSTI]

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  9. Magnetic anisotropy and domain structure of the layered manganite...

    Office of Scientific and Technical Information (OSTI)

    1.64Mnsub 2Osub 7 Citation Details In-Document Search Title: Magnetic anisotropy and domain structure of the layered manganite Lasub 1.36Srsub 1.64Mnsub 2Osub ...

  10. Vanadium dioxide film protected with an atomic-layer-deposited...

    Office of Scientific and Technical Information (OSTI)

    In this work, the authors deposited an ultrathin Alsub 2Osub 3 film with atomic layer ... heated at 350 C. However, in a humid environment at prolonged durations, a thicker ALD ...

  11. Marine Boundary Layer Cloud Observations in the Azores (Journal...

    Office of Scientific and Technical Information (OSTI)

    Marine Boundary Layer Cloud Observations in the Azores Citation Details ... Publication Date: 2012-11-01 OSTI Identifier: 1059795 Report Number(s): BNL--98829-2012-JA Journal ID: ISSN ...

  12. An Analytical Study Of A 2-Layer Transient Thermal Conduction...

    Open Energy Info (EERE)

    (e.g., where there is a shallow water table or a thin soil layer). Authors T. H. Larson and A. T. Hsui Published Journal Geophysics, 1992 DOI Not Provided Check for DOI...

  13. Nonlocal Thermal Transport across Embedded Few-Layer Graphene Sheets

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Ying; Huxtable, Scott T; Yang, Bao; Sumpter, Bobby G; Qiao, Rui

    2014-01-01

    Thermal transport across the interfaces between few-layer graphene sheets and soft materials exhibits intriguing anomalies when interpreted using the classical Kapitza model, e.g., the conductance of the same interface differs greatly for different modes of interfacial thermal transport. Using atomistic simulations, we show that such thermal transport follows a nonlocal flux-temperature drop constitutive law and is characterized jointly by a quasi-local conductance and a nonlocal conductance instead of the classical Kapitza conductance. The nonlocal model enables rationalization of many anomalies of the thermal transport across embedded few-layer graphene sheets and should be used in studies of interfacial thermal transport involvingmore » few-layer graphene sheets or other ultra-thin layered materials.« less

  14. Focusing of dipole radiation by a negative index chiral layer. 1. A thick layer as compared with the wavelength

    SciTech Connect (OSTI)

    Guzatov, D V; Klimov, V V

    2014-09-30

    We have derived and investigated the analytical expressions for the fields of scattered radiation of an electric dipole source by a chiral (bi-isotropic) layer with arbitrary permittivity and permeability and arbitrary thickness. It is shown that in the negativeindex chiral layer the focus spot of dipole radiation is split due to excitation of right- and left-hand circularly polarised waves. The conditions are found under which the waves with one of the polarisations can be suppressed, which leads to a substantial improvement of the focusing properties of the chiral layer. (metamaterials)

  15. Method for making photovoltaic devices using oxygenated semiconductor thin film layers

    SciTech Connect (OSTI)

    Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

    2014-12-16

    A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

  16. Low cost fuel cell diffusion layer configured for optimized anode water management

    DOE Patents [OSTI]

    Owejan, Jon P; Nicotera, Paul D; Mench, Matthew M; Evans, Robert E

    2013-08-27

    A fuel cell comprises a cathode gas diffusion layer, a cathode catalyst layer, an anode gas diffusion layer, an anode catalyst layer and an electrolyte. The diffusion resistance of the anode gas diffusion layer when operated with anode fuel is higher than the diffusion resistance of the cathode gas diffusion layer. The anode gas diffusion layer may comprise filler particles having in-plane platelet geometries and be made of lower cost materials and manufacturing processes than currently available commercial carbon fiber substrates. The diffusion resistance difference between the anode gas diffusion layer and the cathode gas diffusion layer may allow for passive water balance control.

  17. Center for the Computational Design of Functional Layered Materials (CCDM)

    Office of Science (SC) Website

    | U.S. DOE Office of Science (SC) the Computational Design of Functional Layered Materials (CCDM) Energy Frontier Research Centers (EFRCs) EFRCs Home Centers EFRC External Websites Research Science Highlights News & Events Publications History Contact BES Home Centers Center for the Computational Design of Functional Layered Materials (CCDM) Print Text Size: A A A FeedbackShare Page CCDM Header Director John Perdew Lead Institution Temple University Year Established 2014 Mission To

  18. ARM - Field Campaign - LASIC: Layered Atlantic Smoke Interactions with

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Clouds - Supplemental Measurements Supplemental Measurements Related Campaigns LASIC: Layered Atlantic Smoke Interactions with Clouds 2016.06.01, Zuidema, AMF Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : LASIC: Layered Atlantic Smoke Interactions with Clouds - Supplemental Measurements 2016.06.01 - 2017.05.31 Lead Scientist : Paquita Zuidema Abstract Supplementary measurements are desired for the LASIC campaign to properly

  19. A Liquid Layer Solution for the Grid | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    A Liquid Layer Solution for the Grid A Liquid Layer Solution for the Grid September 15, 2011 - 2:47pm Addthis The Liquid Metal Battery is comprised of liquid metal electrodes and a liquid electrolyte of differing densities, which allows the liquids to separate and stratify without the need for any solid separator. The Liquid Metal Battery is comprised of liquid metal electrodes and a liquid electrolyte of differing densities, which allows the liquids to separate and stratify without the need for

  20. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Wednesday, 21 December 2005 00:00 Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features

  1. Neutron detectors comprising ultra-thin layers of boron powder

    DOE Patents [OSTI]

    Wang, Zhehul; Morris, Christopher

    2013-07-23

    High-efficiency neutron detector substrate assemblies comprising a first conductive substrate, wherein a first side of the substrate is in direct contact with a first layer of a powder material having a thickness of from about 50 nm to about 250 nm and comprising .sup.10boron, .sup.10boron carbide or combinations thereof, and wherein a conductive material is in proximity to the first layer of powder material; and processes of making said neutron detector substrate assemblies.

  2. Multi-layer articles and methods of making same

    DOE Patents [OSTI]

    Fritzemeier, Leslie G.; Zhang, Wei; Palm, Walter C.; Rupich, Martin W.

    2005-05-17

    The invention relates to superconductor articles, and compositions and methods for making superconductor articles. The methods can include using a precursor solution having a relatively small concentration of total free acid. The articles can include more than one layer of superconductor material in which at least one layer of superconductor material can be formed by a solution process, such as a solution process involving the use of metalorganic precursors.

  3. Hexagons, kinks, and disorder in oscillated granular layers

    SciTech Connect (OSTI)

    Melo, F.; Umbanhowar, P.B.; Swinney, H.L.

    1995-11-20

    Experiments on vertically oscillated granular layers in an evacuated container reveal a sequence of well-defined pattern bifurcations as the container acceleration is increased. Period doublings of the layer center of mass motion and a standing wave instability interact to produce hexagons and more complicated patterns composed of distinct spatial domains of different relative phase separated by kinks (phase discontinuities). A simple model displays quantitative agreement with the observed transition sequence. {copyright} {ital 1995} {ital The} {ital American} {ital Physical} {ital Society}.

  4. Layered rocks beneath the Phanerozoic platform of the US midcontinent

    SciTech Connect (OSTI)

    Hauser, E.C. (Cornell Univ., Ithaca, NY (United States))

    1991-03-01

    A thick sequence of layered rocks lies hidden beneath the Phanerozoic cover of the central US over large regions. A thick sequence of Precambrian layered rocks in imaged on the COCORP transect across southern Illinois and Indiana. The thickness of this layered sequence varies from 1-3 times the thickness of the overlying Phanerozoic section of the Illinois basin. The layered sequence is observed for close to 200 km in an east-west direction. Similar layered reflections are seen on the COCORP data from Hardeman Co., TX, and neighboring southwest Oklahoma. Both of these known occurrences lie within the region of the middle Proterozoic Granite/Rhyolite province of the US midcontinent, an area within which scattered wells to basement commonly encounter 1.3-1.5 Ga undeformed granite and/or compositionally similar rhyolite. Therefore, these layered assemblages may comprise a thick sequence of silicic volcanic and sedimentary rocks (perhaps also injected by mafic sills) between scattered volcanic-intrusive centers, such as exposed in the St. Francois Mountains of southeast Missouri. However, in places such as Illinois and Indiana, the near absence of deep wells leaves the possibility that the upper portion of these layered rocks may locally be of late Proterozoic or earliest Paleozoic age. The reprocessing of available industry data, analyzed in conjunction with the existing COCORP data, includes extended vibroseis correlation. These industry data are invaluable in the author's effort to expand the known distribution of these layered rocks (e.g., into north-central Illinois) and to map their structures.

  5. Microsoft Word - Group 1 Boundary Layer(RS).docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Planetary Boundary Layer Height: A Comparison of Estimation Methods and Sites Report Participants: Thiago Biscaro, Instituto Nacional de Pesquisas Espaciais, Brazil Suzane S. de Sá, Harvard University Jae-In Song, Yonsei University, Korea Instructors: Virendra Ghate, Argonne National Laboratory Ewan O'Connor, Finnish Meteorological Institute, University of Reading July 2015 Group 1, July 2015, ARM Summer Training and Science Applications 1 1.0 Planetary Boundary Layer Height: A Comparison of

  6. The Synthesis and Characterization of Substituted Phosphates and Layered

    Broader source: Energy.gov (indexed) [DOE]

    Manganese Oxides | Department of Energy 1 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation es050_whittingham_2011_o.pdf (643.56 KB) More Documents & Publications The Synthesis and Characterization of Substituted Olivines and Layered Manganese Oxides The Synthesis and Characterization of Substituted Olivines and Layered Manganese Oxides FY 2011 Annual Progress Report for Energy Storage R&D

  7. Layered Atlantic Smoke Interactions with Clouds (LASIC) Science Plan

    Office of Scientific and Technical Information (OSTI)

    (Program Document) | SciTech Connect Layered Atlantic Smoke Interactions with Clouds (LASIC) Science Plan Citation Details In-Document Search Title: Layered Atlantic Smoke Interactions with Clouds (LASIC) Science Plan Southern Africa is the world's largest emitter of biomass-burning (BB) aerosols. Their westward transport over the remote southeast Atlantic Ocean colocates some of the largest atmospheric loadings of absorbing aerosol with the least examined of the Earth's major subtropical

  8. Simulation of High Reynolds Number Turbulent Boundary Layers | Argonne

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Leadership Computing Facility A visualization of the velocity in a boundary layer at Reynolds numbers up to 2100 shows the growth of the turbulence structures out into the free stream as it evolves downstream (to the right) and the intermittent uneven boundary of the turbulent region. Juan Sillero, Universidad Politécnica de Madrid. Simulation of High Reynolds Number Turbulent Boundary Layers PI Name: Robert Moser PI Email: rmoser@ices.utexas.edu Institution: University of Texas at Austin

  9. Polaron Coherence Condensation in Layered Colossal Resistive Manganites

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Polaron Coherence Condensation in Layered Colossal Resistive Manganites Polaron Coherence Condensation in Layered Colossal Resistive Manganites Print Wednesday, 30 July 2008 00:00 Novel quantum phenomena, such as high-temperature superconductivity (HTSC) and colossal magnetoresistance (CMR), arise in certain materials where the interactions between electrons are very strong, but the mechanism driving their appearance remains a major puzzle. Now, angle-resolved photoemission findings from an

  10. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    SciTech Connect (OSTI)

    Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2015-04-28

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  11. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOE Patents [OSTI]

    Liu, Jun; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2014-09-16

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  12. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOE Patents [OSTI]

    Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2013-10-22

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  13. Intermediate coating layer for high temperature rubbing seals for rotary regenerators

    DOE Patents [OSTI]

    Schienle, James L.; Strangman, Thomas E.

    1995-01-01

    A metallic regenerator seal is provided having multi-layer coating comprising a NiCrAlY bond layer, a yttria stabilized zirconia (YSZ) intermediate layer, and a ceramic high temperature solid lubricant surface layer comprising zinc oxide, calcium fluoride, and tin oxide. Because of the YSZ intermediate layer, the coating is thermodynamically stable and resists swelling at high temperatures.

  14. Method of making a layered composite electrode/electrolyte

    DOE Patents [OSTI]

    Visco, Steven J.; Jacobson, Craig P.; DeJonghe, Lutgard C.

    2005-01-25

    An electrode/electrolyte structure is prepared by a plurality of methods. An unsintered (possibly bisque fired) moderately catalytic electronically-conductive or homogeneous mixed ionic electronic conductive electrode material is deposited on a layer composed of a sintered or unsintered ionically-conductive electrolyte material prior to being sintered. A layer of particulate electrode material is deposited on an unsintered ("green") layer of electrolyte material and the electrode and electrolyte layers are sintered simultaneously, sometimes referred to as "co-firing," under conditions suitable to fully densify the electrolyte while the electrode retains porosity. Or, the layer of particulate electrode material is deposited on a previously sintered layer of electrolyte, and then sintered. Subsequently, a catalytic material is added to the electrode structure by infiltration of an electrolcatalyst precursor (e.g., a metal salt such as a transition metal nitrate). This may be followed by low temperature firing to convert the precursor to catalyst. The invention allows for an electrode with high electronic conductivity and sufficient catalytic activity to achieve high power density in an ionic (electrochemical) device such as fuel cells and electrolytic gas separation systems.

  15. MCrAlY bond coat with enhanced Yttrium layer

    DOE Patents [OSTI]

    Jablonski, Paul D; Hawk, Jeffrey A

    2015-04-21

    One or more embodiments relates to an MCrAlY bond coat comprising an MCrAlY layer in contact with a Y--Al.sub.2O.sub.3 layer. The MCrAlY layer is comprised of a .gamma.-M solid solution, a .beta.-MAl intermetallic phase, and Y-type intermetallics. The Y--Al.sub.2O.sub.3 layer is comprised of Yttrium atoms coordinated with oxygen atoms comprising the Al.sub.2O.sub.3 lattice. Both the MCrAlY layer and the Y--Al.sub.2O.sub.3 layer have a substantial absence of Y--Al oxides, providing advantage in the maintainability of the Yttrium reservoir within the MCrAlY bulk. The MCrAlY bond coat may be fabricated through application of a Y.sub.2O.sub.3 paste to an MCrAlY material, followed by heating in a non-oxidizing environment.

  16. Bounce-coated ablation layers on fusion targets

    SciTech Connect (OSTI)

    Gram, R.Q.; Immesoete, C.K.; Kim, H.; Forsley, L.

    1988-09-01

    The current effort to achieve high compression of deuterium--tritium fuel by the Laboratory for Laser Energetics utilizes targets which are coated with uniform ablation layers of parylene. These layers are applied to the targets while they bounce on the vertically vibrating surface of a resonator. The low-power plasma required to prevent targets from sticking to each other and to the vibrating surface increases the deposition rate by a factor of 2 to 4. Careful control of plasma conditions is required to maintain bouncing while avoiding overly rapid polymerization, defect growth, embrittlement, and other adverse effects in the parylene layers. Ablation layer quality is studied as a function of parylene monomer pressure, argon pressure, and plasma power, and the optimum operating region is discussed. Automatic control of these parameters is described. A tensile strength of 36 MPa is achieved in the bounce-coated parylene layers, adding considerable strength to polymer shell targets. The permeability of these layers to Ar and He is measured.

  17. Mo layer thickness requirement on the ion source back plate for the HNB and DNB ion sources in ITER

    SciTech Connect (OSTI)

    Singh, M. J.; Hemsworth, R.; Boilson, D.; De Esch, H. P. L.

    2015-04-08

    All the inner surfaces of the ion sources and the upstream surface of the plasma grid of the ITER neutral beam ion sources are proposed to be coated with molybdenum. This is done to avoid sputtering of the base material (Cu or CuCrZr) by the ions in the source plasma (D{sup +}, D{sub 2}{sup +}, D{sub 3}{sup +} or H{sup +}, H{sub 2}{sup +}, H{sub 3}{sup +}). The sputtering of Mo by the ions in the source plasma is low compared to that from Cu, and the threshold energy for sputtering ∼80 eV) is high compared to the energy of the ions in the source. However the D{sub 2}{sup +}, H{sub 2}{sup +} and D{sup +}, H{sup +} ions backstreaming from the accelerators will have energies that substantially exceed that threshold and it is important that the Mo layer is not eroded such that the base material is exposed to the source plasma. In the case of the HNB, the backstreaming ion power is calculated to be in the order of ∼1 MW, and the average energy of the backstreaming ions is calculated to be ∼300 keV. The ion sources in the HNB beam lines, 40 A 1 MeV D and 46 A 870 keV H beams, are supposed to operate for a period of 2 x 10{sup 7} s. For the DNB, 60 A 100 keV H beams, the corresponding number is 1.4 × 10{sup 6} s considering a beam duty cycle of 3s ON/20s OFF with 5 Hz modulation. The Mo layer on the ion source back plate should be thick enough to survive this operational time. Thickness estimation has been carried out taking into account the sputtering yields (atoms/ion), the energy spectrum of the backstreaming ions and the estimated profiles on the ion source back plate.

  18. Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition

    DOE Patents [OSTI]

    Jiang, Ying-Bing; Cecchi, Joseph L.; Brinker, C. Jeffrey

    2011-05-24

    Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the surface of the porous layer. A plasma can then be used to react a plurality of second molecules with the first layer of first molecules to form a first layer of a barrier layer. The barrier layers can seal the pores of the porous material, function as a diffusion barrier, be conformal, and/or have a negligible impact on the overall ILD k value of the porous material.

  19. Demonstration of fuel hot-spot pressure in excess of 50 Gbar for direct-drive, layered deuterium-tritium implosions on OMEGA

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Regan, S. P.; Goncharov, V. N.; Igumenshchev, I. V.; Sangster, T. C.; Betti, R.; Bose, A.; Boehly, T. R.; Bonino, M. J.; Campbell, E. M.; Cao, D.; et al

    2016-07-07

    A record fuel hot-spot pressure Phs = 56±7 Gbar was inferred from x-ray and nuclear diagnostics for direct-drive inertial confinement fusion cryogenic, layered deuterium–tritium implosions on the 60-beam, 30-kJ, 351-nm OMEGA Laser System. When hydrodynamically scaled to the energy of the National Ignition Facility (NIF), these implosions achieved a Lawson parameter ~60% of the value required for ignition [A. Bose et al., Phys. Rev. E (in press)], similar to indirect-drive implosions [R. Betti et al., Phys. Rev. Lett. 114, 255003 (2015)], and nearly half of the direct-drive ignition-threshold pressure. Relative to symmetric, one-dimensional simulations, the inferred hot-spot pressure is ~40%more » lower. Furthermore, three-dimensional simulations suggest that low-mode distortion of the hot spot seeded by laser-drive nonuniformity and target-positioning error reduces target performance.« less

  20. Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization

    SciTech Connect (OSTI)

    Kraus, Theodore J.; Nepomnyashchii, Alexander B.; Parkinson, B. A.

    2015-01-15

    Atomic layer deposition was used to grow epitaxial layers of anatase (001) TiO{sub 2} on the surface of SrTiO{sub 3} (100) crystals with a 3% lattice mismatch. The epilayers grow as anatase (001) as confirmed by x-ray diffraction. Atomic force microscope images of deposited films showed epitaxial layer-by-layer growth up to about 10 nm, whereas thicker films, of up to 32 nm, revealed the formation of 2–5 nm anatase nanocrystallites oriented in the (001) direction. The anatase epilayers were used as substrates for dye sensitization. The as received strontium titanate crystal was not sensitized with a ruthenium-based dye (N3) or a thiacyanine dye (G15); however, photocurrent from excited state electron injection from these dyes was observed when adsorbed on the anatase epilayers. These results show that highly ordered anatase surfaces can be grown on an easily obtained substrate crystal.

  1. Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

    DOE Patents [OSTI]

    Syn, C.K.; Lesuer, D.R.

    1995-07-04

    A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step. 5 figs.

  2. Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

    DOE Patents [OSTI]

    Syn, Chol K.; Lesuer, Donald R.

    1995-01-01

    A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step.

  3. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOE Patents [OSTI]

    Jansen, Kai W.; Maley, Nagi

    2001-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  4. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOE Patents [OSTI]

    Jansen, Kai W.; Maley, Nagi

    2000-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  5. One-photon mass-analyzed threshold ionization (MATI) spectroscopy of pyridine: Determination of accurate ionization energy and cationic structure

    SciTech Connect (OSTI)

    Lee, Yu Ran; Kang, Do Won; Kim, Hong Lae E-mail: hlkim@kangwon.ac.kr; Kwon, Chan Ho E-mail: hlkim@kangwon.ac.kr

    2014-11-07

    Ionization energies and cationic structures of pyridine were intensively investigated utilizing one-photon mass-analyzed threshold ionization (MATI) spectroscopy with vacuum ultraviolet radiation generated by four-wave difference frequency mixing in Kr. The present one-photon high-resolution MATI spectrum of pyridine demonstrated a much finer and richer vibrational structure than that of the previously reported two-photon MATI spectrum. From the MATI spectrum and photoionization efficiency curve, the accurate ionization energy of the ionic ground state of pyridine was confidently determined to be 73 570 ± 6 cm{sup −1} (9.1215 ± 0.0007 eV). The observed spectrum was almost completely assigned by utilizing Franck-Condon factors and vibrational frequencies calculated through adjustments of the geometrical parameters of cationic pyridine at the B3LYP/cc-pVTZ level. A unique feature unveiled through rigorous analysis was the prominent progression of the 10 vibrational mode, which corresponds to in-plane ring bending, and the combination of other totally symmetric fundamentals with the ring bending overtones, which contribute to the geometrical change upon ionization. Notably, the remaining peaks originate from the upper electronic state ({sup 2}A{sub 2}), as predicted by high-resolution photoelectron spectroscopy studies and symmetry-adapted cluster configuration interaction calculations. Based on the quantitatively good agreement between the experimental and calculated results, it was concluded that upon ionization the pyridine cation in the ground electronic state should have a planar structure of C{sub 2v} symmetry through the C-N axis.

  6. Buffer layer for thin film structures (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Buffer layer for thin film structures Citation Details In-Document Search Title: Buffer layer for thin film structures A composite structure including a base substrate and a layer...

  7. Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

    DOE Patents [OSTI]

    Auciello, Orlando

    2010-05-11

    A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

  8. High rate buffer layer for IBAD MgO coated conductors

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.

    2007-08-21

    Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

  9. Tandem photovoltaic cells with a composite intermediate layer

    SciTech Connect (OSTI)

    Travkin, V. V. Pakhomov, G. L.; Luk’anov, A. Yu.; Stuzhin, P. A.

    2015-11-15

    We have fabricated and tested tandem photovoltaic cells containing series-connected subcells of the “oxide–organic semiconductor–metal” type. The organic semiconductors were two phthalocyanine dyes (SubPc and PcVO); Al or Ag:Mg were used as capping metallic electrodes. A semitransparent composite metal–oxide layer formed by molybdenum oxide MoO{sub x} deposited over an ultrathin Al layer is used to join the subcells. Additionally, a MoO{sub x} layer deposited onto glass/ITO substrates serves as an anode buffer in the front subcell, and LiF deposited onto the dye layers serves as a cathode buffer in the front or rear subcells. Upon optimization of the thickness and composition of the intermediate layer, the open circuit voltage U{sub oc} amounts to 1.6 V reflecting total summation of the contributions from the each of the subcells at a wide spectral coating from 300–1000 nm. The fill factor in the tandem cell is not worse than in individually made single cells with the same scheme or in disconnected subcells.

  10. A robust absorbing layer method for anisotropic seismic wave modeling

    SciTech Connect (OSTI)

    Mtivier, L.; Brossier, R.; Labb, S.; Operto, S.; Virieux, J.

    2014-12-15

    When applied to wave propagation modeling in anisotropic media, Perfectly Matched Layers (PML) exhibit instabilities. Incoming waves are amplified instead of being absorbed. Overcoming this difficulty is crucial as in many seismic imaging applications, accounting accurately for the subsurface anisotropy is mandatory. In this study, we present the SMART layer method as an alternative to PML approach. This method is based on the decomposition of the wavefield into components propagating inward and outward the domain of interest. Only outgoing components are damped. We show that for elastic and acoustic wave propagation in Transverse Isotropic media, the SMART layer is unconditionally dissipative: no amplification of the wavefield is possible. The SMART layers are not perfectly matched, therefore less accurate than conventional PML. However, a reasonable increase of the layer size yields an accuracy similar to PML. Finally, we illustrate that the selective damping strategy on which is based the SMART method can prevent the generation of spurious S-waves by embedding the source in a small zone where only S-waves are damped.

  11. LARGE-AREA EPITAXIAL GRAPHENE LAYER. (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Conference: LARGE-AREA EPITAXIAL GRAPHENE LAYER. Citation Details In-Document Search Title: LARGE-AREA EPITAXIAL GRAPHENE LAYER. Abstract not provided. Authors: Ohta, Taisuke ...

  12. Strained layer superlattice focal plane array having a planar structure

    DOE Patents [OSTI]

    Kim, Jin K; Carroll, Malcolm S; Gin, Aaron; Marsh, Phillip F; Young, Erik W; Cich, Michael J

    2012-10-23

    An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.

  13. Visibility of two-dimensional layered materials on various substrates

    SciTech Connect (OSTI)

    Müller, M. R. E-mail: knoch@iht.rwth-aachen.de; Gumprich, A.; Ecik, E.; Kallis, K. T.; Winkler, F.; Kardynal, B.; Petrov, I.; Kunze, U.; Knoch, J. E-mail: knoch@iht.rwth-aachen.de

    2015-10-14

    For the investigation of 2D layered materials such as graphene, transition-metal dichalcogenides, boron nitride, and their heterostructures, dedicated substrates are required to enable unambiguous identification through optical microscopy. A systematic study is conducted, focusing on various 2D layered materials and substrates. The simulated colors are displayed and compared with microscopy images. Additionally, the issue of defining an appropriate index for measuring the degree of visibility is discussed. For a wide range of substrate stacks, layer thicknesses for optimum visibility are given along with the resulting sRGB colors. Further simulations of customized stacks can be conducted using our simulation tool, which is available for download and contains a database featuring a wide range of materials.

  14. Ternary metal-rich sulfide with a layered structure

    DOE Patents [OSTI]

    Franzen, Hugo F.; Yao, Xiaoqiang

    1993-08-17

    A ternary Nb-Ta-S compound is provided having the atomic formula, Nb.sub.1.72 Ta.sub.3.28 S.sub.2, and exhibiting a layered structure in the sequence S-M3-M2-M1-M2-M3-S wherein S represents sulfur layers and M1, M2, and M3 represent Nb/Ta mixed metal layers. This sequence generates seven sheets stacked along the [001] direction of an approximate body centered cubic crystal structure with relatively weak sulfur-to-sulfur van der Waals type interactions between adjacent sulfur sheets and metal-to-metal bonding within and between adjacent mixed metal sheets.

  15. Nanostructure templating using low temperature atomic layer deposition

    DOE Patents [OSTI]

    Grubbs, Robert K.; Bogart, Gregory R.; Rogers, John A.

    2011-12-20

    Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods comprise depositing by atomic layer deposition (ALD) structural layers that are stable at the desired elevated temperatures, onto a template employing a graded temperature deposition scheme. At least one structural layer is deposited at an initial temperature that is less than or equal to the stability temperature of the template, and subsequent depositions made at incrementally increased deposition temperatures until the desired elevated temperature stability is achieved. Nanostructure templates include three dimensional (3D) polymeric templates having features on the order of 100 nm fabricated by proximity field nanopatterning (PnP) methods.

  16. Anomalous reduction of the switching voltage of Bi-doped Ge{sub 0.5}Se{sub 0.5} ovonic threshold switching devices

    SciTech Connect (OSTI)

    Seo, Juhee; Ahn, Hyung-Woo; Shin, Sang-yeol; Cheong, Byung-ki; Lee, Suyoun

    2014-04-14

    Switching devices based on Ovonic Threshold Switching (OTS) have been considered as a solution to overcoming limitations of Si-based electronic devices, but the reduction of switching voltage is a major challenge. Here, we investigated the effect of Bi-doping in Ge{sub 0.5}Se{sub 0.5} thin films on their thermal, optical, electrical properties, as well as on the characteristics of OTS devices. As Bi increased, it was found that both of the optical energy gap (E{sub g}{sup opt}) and the depth of trap states decreased resulting in a drastic reduction of the threshold voltage (V{sub th}) by over 50%. In addition, E{sub g}{sup opt} was found to be about three times of the conduction activation energy for each composition. These results are explained in terms of the Mott delocalization effect by doping Bi.

  17. Atomic and molecular layer deposition for surface modification

    SciTech Connect (OSTI)

    Vh-Nissi, Mika; Sievnen, Jenni; Salo, Erkki; Heikkil, Pirjo; Kentt, Eija; Johansson, Leena-Sisko; Koskinen, Jorma T.; Harlin, Ali

    2014-06-01

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gassolid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin even non-uniform atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: ALD/MLD can be used to adjust surface characteristics of films and fiber materials. Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. Different film growth and oxidation potential with different precursors. Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

  18. Microsoft Word - NRAP-TRS-III-00X-2016_No-Impact Threshold Values for Groundwater Reduced-Order Models.final.2016.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    No-Impact Threshold Values for Groundwater Reduced-Order Models 28 January 2016 Office of Fossil Energy NRAP-TRS-III-002-2016 Disclaimer This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus,

  19. On the possibility of reducing the instability threshold of a parametric decay of an extraordinary wave into two upper hybrid waves in an inhomogeneous plasma

    SciTech Connect (OSTI)

    Popov, A. Yu. Gusakov, E. Z.

    2015-01-15

    A parametric decay instability (PDI) of an extraordinary wave leading to excitation of two upper hybrid (UH) plasmons at frequencies close to half the pump wave frequency is analyzed. It is shown that the two-plasmon PDI power threshold can be significantly reduced under conditions of electron cyclotron resonance heating (ECRH) experiments in toroidal magnetic devices, where the plasma density profile is often nonmonotonic, which leads to the localization of UH waves.

  20. ARM - Field Campaign - LASIC: Layered Atlantic Smoke Interactions with

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Clouds - Cloud Radar at St. Helena Cloud Radar at St. Helena Related Campaigns LASIC: Layered Atlantic Smoke Interactions with Clouds 2016.06.01, Zuidema, AMF Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : LASIC: Layered Atlantic Smoke Interactions with Clouds - Cloud Radar at St. Helena 2017.08.01 - 2017.10.31 Lead Scientist : Paquita Zuidema Abstract Smoke and clouds over the remote ocean represent a regime of significant

  1. Inter-layer potential for hexagonal boron nitride

    SciTech Connect (OSTI)

    Leven, Itai; Hod, Oded; Azuri, Ido; Kronik, Leeor

    2014-03-14

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

  2. ARM - Field Campaign - Boundary Layer CO2 Using CW Lidar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govCampaignsBoundary Layer CO2 Using CW Lidar Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Boundary Layer CO2 Using CW Lidar 2005.05.21 - 2005.05.24 Lead Scientist : Michael Dobbs Abstract Overflights Underway at ACRF Southern Great Plains Site (M.Dobbs/J.Liljegren) Science collaborators at ITT Industries and the National Aeronautics and Space Administration (NASA) Langley Research Center (LaRC) conducted flights over the Central

  3. Deposition of thin silicon layers on transferred large area graphene

    SciTech Connect (OSTI)

    Lupina, Grzegorz Kitzmann, Julia; Lukosius, Mindaugas; Dabrowski, Jarek; Wolff, Andre; Mehr, Wolfgang

    2013-12-23

    Physical vapor deposition of Si onto transferred graphene is investigated. At elevated temperatures, Si nucleates preferably on wrinkles and multilayer graphene islands. In some cases, however, Si can be quasi-selectively grown only on the monolayer graphene regions while the multilayer islands remain uncovered. Experimental insights and ab initio calculations show that variations in the removal efficiency of carbon residuals after the transfer process can be responsible for this behavior. Low-temperature Si seed layer results in improved wetting and enables homogeneous growth. This is an important step towards realization of electronic devices in which graphene is embedded between two Si layers.

  4. Plasma flows in scrape-off layer of Aditya tokamak

    SciTech Connect (OSTI)

    Sangwan, Deepak; Jha, Ratneshwar; Brotankova, Jana; Gopalkrishna, M. V. [Institute for Plasma Research, Gandhinagar 382 428, Gujarat (India)

    2012-09-15

    The magnetized Mach probe is used to make measurement of plasma flows in the scrape-off layer of the Aditya tokamak [R. Jha et al., Plasma Phys. Controlled Fusion 51, 095010 (2009)]. This probe is further used to measure dependencies of Mach number on local plasma densities and radial distances of the probe in the scrape-off layer. The measured Mach number has contributions from E Multiplication-Sign B drift, Pfrisch-Schlueter, and transport driven flows. We have determined that the toroidal flow is towards the ion side of the limiter and the poloidal flow direction is towards the contact of the last closed flux surface with the limiter.

  5. Lower Atmospheric Boundary Layer Experiment (LABLE) Final Campaign Report

    SciTech Connect (OSTI)

    Klein, P; Bonin, TA; Newman, JF; Turner, DD; Chilson, P; Blumberg, WG; Mishra, S; Wainwright, CE; Carney, M; Jacobsen, EP; Wharton, S

    2015-11-01

    The Lower Atmospheric Boundary Layer Experiment (LABLE) included two measurement campaigns conducted at the Atmospheric Radiation Measurement (ARM) Southern Great Plains site in Oklahoma during 2012 and 2013. LABLE was designed as a multi-phase, low-cost collaboration among the University of Oklahoma, the National Severe Storms Laboratory, Lawrence Livermore National Laboratory, and the ARM program. A unique aspect was the role of graduate students in LABLE. They served as principal investigators and took the lead in designing and conducting experiments using different sampling strategies to best resolve boundary-layer phenomena.

  6. Double layer -- a particle accelerator in the magnetosphere

    SciTech Connect (OSTI)

    Fu, Xiangrong

    2015-07-16

    Slides present the material under the following topics: Introduction (What is a double layer (DL)? Why is it important? Key unsolved problems); Theory -- time-independent solutions of 1D Vlasov--Poisson system; Particle-in-cell simulations (Current-driven DLs); and Electron acceleration by DL (Betatron acceleration). Key problems include the generation mechanism, stability, and electron acceleration. In summary, recent observations by Van Allen Probes show large number of DLs in the outer radiation belt, associated with enhanced flux of relativistic electrons. Simulations show that ion acoustic double layers can be generated by field-aligned currents. Thermal electrons can gain energy via betatron acceleration in a dipole magnetic field.

  7. Method for removing semiconductor layers from salt substrates

    DOE Patents [OSTI]

    Shuskus, Alexander J.; Cowher, Melvyn E.

    1985-08-27

    A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

  8. Deep Insights from Thin Layers | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Deep Insights from Thin Layers Deep Insights from Thin Layers March 13, 2014 - 4:08pm Addthis The Linac Coherent Light Source will create 3D images of single molecules using ultrafast pulses of very intense hard X-rays. | Image courtesy of SLAC. The Linac Coherent Light Source will create 3D images of single molecules using ultrafast pulses of very intense hard X-rays. | Image courtesy of SLAC. Charles Rousseaux Charles Rousseaux Senior Communications Specialist (detailee) How does it work? A

  9. Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wierer, Jonathan J.; Allerman, Andrew A.; Skogen, Erik J.; Tauke-Pedretti, Anna; Vawter, Gregory A.; Montaño, Ines

    2015-06-01

    We demonstrate the selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices using a silicon nitride (SiNx) capping layer. The (SiNx) capped superlattice exhibits suppressed layer disordering under high-temperature annealing. In addition, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. In conclusion, patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III–nitride-based intersubband devices.

  10. Multiple Layer Graphene Optical Modulator - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advanced Materials Advanced Materials Find More Like This Return to Search Multiple Layer Graphene Optical Modulator Lawrence Berkeley National Laboratory Contact LBL About This Technology Publications: PDF Document Publication LBNL Commercial Analysis Report (233 KB) Technology Marketing Summary Scientists at Berkeley Lab have developed a tiny optical modulator based on graphene, potentially leading to significantly improved data transmission speeds in digital communications. The extremely

  11. APIVT-Grown Silicon Thin Layers and PV Devices: Preprint

    SciTech Connect (OSTI)

    Wang, T. H.; Ciszek, T. F.; Page, M. R.; Bauer, R. E.; Wang, Q.; Landry, M. D.

    2002-05-01

    Large-grained (5-20 ..mu..m) polycrystalline silicon layers have been grown at intermediate temperatures of 750-950C directly on foreign substrates without a seeding layer by iodine vapor transport at atmospheric pressure with rates as high as 3 mm/min. A model is constructed to explain the atypical temperature dependence of growth rate. We have also used this technique to grow high-quality epitaxial layers on heavily doped CZ-Si and on upgraded MG-Si substrates. Possible solar cell structures of thin-layer polycrystalline silicon on foreign substrates with light trapping have been examined, compared, and optimized by two-dimensional device simulations. The effects of grain boundary re-combination on device performance are presented for two grain sizes of 2 and 20 mm. We found that 104 cm/s recombination velocity is adequate for 20-m m grain-sized thin silicon, whereas a very low recombination velocity of 103 cm/s must be accomplished in order to achieve reasonable performance for a 2- mm grain-sized polycrystalline silicon device.

  12. Single-layer graphene cathodes for organic photovoltaics

    SciTech Connect (OSTI)

    Cox, Marshall P.; Gorodetsky, Alon A.; Kim, Bumjung; Kim, Keun Soo; Jia, Zhang; Kim, Philip; Nuckolls, Colin; Kymissis, Ioannis

    2011-01-01

    A laminated single-layer graphene is demonstrated as a cathode for organic photovoltaicdevices. The measured properties indicate that graphene offers two potential advantages over conventional photovoltaic electrode materials; work function matching via contact doping, and increased power conversion efficiency due to transparency. These findings indicate that flexible, light-weight all carbon solar cells can be constructed using graphene as the cathode material.

  13. Charge density wave transition in single-layer titanium diselenide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chen, P.; Chan, Y. -H.; Fang, X. -Y.; Zhang, Y.; Chou, M. Y.; Mo, S. -K.; Hussain, Z.; Fedorov, A. -V.; Chiang, T. -C.

    2015-11-16

    A single molecular layer of titanium diselenide (TiSe2) is a promising material for advanced electronics beyond graphene--a strong focus of current research. Such molecular layers are at the quantum limit of device miniaturization and can show enhanced electronic effects not realizable in thick films. We show that single-layer TiSe2 exhibits a charge density wave (CDW) transition at critical temperature TC=232±5 K, which is higher than the bulk TC=200±5 K. Angle-resolved photoemission spectroscopy measurements reveal a small absolute bandgap at room temperature, which grows wider with decreasing temperature T below TC in conjunction with the emergence of (2 × 2) ordering.more » The results are rationalized in terms of first-principles calculations, symmetry breaking and phonon entropy effects. The behavior of the Bardeen-Cooper-Schrieffer (BCS) gap implies a mean-field CDW order in the single layer and an anisotropic CDW order in the bulk.« less

  14. Charge density wave transition in single-layer titanium diselenide

    SciTech Connect (OSTI)

    Chen, P.; Chan, Y. -H.; Fang, X. -Y.; Zhang, Y.; Chou, M. Y.; Mo, S. -K.; Hussain, Z.; Fedorov, A. -V.; Chiang, T. -C.

    2015-11-16

    A single molecular layer of titanium diselenide (TiSe2) is a promising material for advanced electronics beyond graphene--a strong focus of current research. Such molecular layers are at the quantum limit of device miniaturization and can show enhanced electronic effects not realizable in thick films. We show that single-layer TiSe2 exhibits a charge density wave (CDW) transition at critical temperature TC=232±5 K, which is higher than the bulk TC=200±5 K. Angle-resolved photoemission spectroscopy measurements reveal a small absolute bandgap at room temperature, which grows wider with decreasing temperature T below TC in conjunction with the emergence of (2 × 2) ordering. The results are rationalized in terms of first-principles calculations, symmetry breaking and phonon entropy effects. The behavior of the Bardeen-Cooper-Schrieffer (BCS) gap implies a mean-field CDW order in the single layer and an anisotropic CDW order in the bulk.

  15. Development of Highly Selective Oxidation Catalysts by Atomic Layer Deposition

    Broader source: Energy.gov [DOE]

    This factsheet describes a research project whose goal is to use Atomic Layer Deposition to construct nanostructured catalysts to improve the effectiveness of oxidative dehydrogenation of alkanes. More effective catalysts could enable higher specific conversion rates and result in drastic energy savings - up to 25 trillion Btu per year by 2020.

  16. Enhanced Raman Scattering on In-plane Anisotropic Layered Materials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liang, Liangbo; Meunier, Vincent; Sumpter, Bobby G.; Ling, Xi; Lin, Jingjing; Zhang, Shuqing; Mao, Nannan; Zhang, Na; Tong, Lianming; Zhang, Jin

    2015-11-19

    Surface-enhanced Raman scattering (SERS) on two-dimensional (2D) layered materials has provided a unique platform to study the chemical mechanism (CM) of the enhancement due to its natural separation from electromagnetic enhancement. The CM stems from the basic charge interactions between the substrate and molecules. Despite the extensive studies of the energy alignment between 2D materials and molecules, an understanding of how the electronic properties of the substrate are explicitly involved in the charge interaction is still unclear. Lately, a new group of 2D layered materials with anisotropic structure, including orthorhombic black phosphorus (BP) and triclinic rhenium disulphide (ReS2), has attractedmore » great interest due to their unique anisotropic electrical and optical properties. Herein, we report a unique anisotropic Raman enhancement on few-layered BP and ReS2 using copper phthalocyanine (CuPc) molecules as a Raman probe, which is absent on isotropic graphene and h-BN. According to detailed Raman tensor analysis and density functional theory calculations, anisotropic charge interactions due to the anisotropic carrier mobilities of the 2D materials are responsible for the angular dependence of the Raman enhancement. Our findings not only provide new insights into the CM process in SERS, but also open up new avenues for the exploration and application of the electronic properties of anisotropic 2D layered materials.« less

  17. Enhanced Raman Scattering on In-plane Anisotropic Layered Materials

    SciTech Connect (OSTI)

    Liang, Liangbo; Meunier, Vincent; Sumpter, Bobby G.; Ling, Xi; Lin, Jingjing; Zhang, Shuqing; Mao, Nannan; Zhang, Na; Tong, Lianming; Zhang, Jin

    2015-11-19

    Surface-enhanced Raman scattering (SERS) on two-dimensional (2D) layered materials has provided a unique platform to study the chemical mechanism (CM) of the enhancement due to its natural separation from electromagnetic enhancement. The CM stems from the basic charge interactions between the substrate and molecules. Despite the extensive studies of the energy alignment between 2D materials and molecules, an understanding of how the electronic properties of the substrate are explicitly involved in the charge interaction is still unclear. Lately, a new group of 2D layered materials with anisotropic structure, including orthorhombic black phosphorus (BP) and triclinic rhenium disulphide (ReS2), has attracted great interest due to their unique anisotropic electrical and optical properties. Herein, we report a unique anisotropic Raman enhancement on few-layered BP and ReS2 using copper phthalocyanine (CuPc) molecules as a Raman probe, which is absent on isotropic graphene and h-BN. According to detailed Raman tensor analysis and density functional theory calculations, anisotropic charge interactions due to the anisotropic carrier mobilities of the 2D materials are responsible for the angular dependence of the Raman enhancement. Our findings not only provide new insights into the CM process in SERS, but also open up new avenues for the exploration and application of the electronic properties of anisotropic 2D layered materials.

  18. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  19. Fabrication of layered self-standing diamond film by dc arc plasma jet chemical vapor deposition

    SciTech Connect (OSTI)

    Chen, G. C.; Dai, F. W.; Li, B.; Lan, H.; Askari, J.; Tang, W. Z.; Lu, F. X.

    2007-01-15

    Layered self-standing diamond films, consisting of an upper layer, buffer layer, and a lower layer, were fabricated by fluctuating the ratio of methane to hydrogen in high power dc arc plasma jet chemical vapor deposition. There were micrometer-sized columnar diamond crystalline grains in both upper layer and lower layer. The size of the columnar diamond crystalline grains was bigger in the upper layer than that in the lower layer. The orientation of the upper layer was (110), while it was (111) for the lower layer. Raman results showed that no sp{sup 3} peak shift was found in the upper layer, but it was found and blueshifted in the lower layer. This indicated that the internal stress within the film body could be tailored by this layered structure. The buffer layer with nanometer-sized diamond grains formed by secondary nucleation was necessary in order to form the layered film. Growth rate was over 10 {mu}m/h in layered self-standing diamond film fabrication.

  20. Organic photovoltaic device with interfacial layer and method of fabricating same

    DOE Patents [OSTI]

    Marks, Tobin J.; Hains, Alexander W.

    2013-03-19

    An organic photovoltaic device and method of forming same. In one embodiment, the organic photovoltaic device has an anode, a cathode, an active layer disposed between the anode and the cathode; and an interfacial layer disposed between the anode and the active layer, the interfacial layer comprising 5,5'-bis[(p-trichlorosilylpropylphenyl)phenylamino]-2,2'-bithiophene (PABTSi.sub.2).