National Library of Energy BETA

Sample records for layered bispectral threshold

  1. ARM - VAP Process - lbtm-minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    : Layered Bispectral Threshold Method (LBTM) cloud products derived from GMS-5,Darwin lbtm3minnisman : Layered Bispectral Threshold Method (LBTM) cloud products derived...

  2. Transport-driven scrape-off layer flows and the x-point dependence of the L-H power threshold in Alcator C-Mod

    SciTech Connect (OSTI)

    LaBombard, B.; Rice, J.E.; Hubbard, A.E.; Hughes, J.W.; Greenwald, M.; Granetz, R.S.; Irby, J.H.; Lin, Y.; Lipschultz, B.; Marmar, E.S.; Marr, K.; Mossessian, D.; Parker, R.; Rowan, W.; Smick, N.; Snipes, J.A.; Terry, J.L.; Wolfe, S.M.; Wukitch, S.J.

    2005-05-15

    Factor of {approx}2 higher power thresholds for low- to high-confinement mode transitions (L-H) with unfavorable x-point topologies in Alcator C-Mod [Phys. Plasmas 1, 1511 (1994)] are linked to flow boundary conditions imposed by the scrape-off layer (SOL). Ballooning-like transport drives flow along magnetic field lines from low- to high-field regions with toroidal direction dependent on upper/lower x-point balance; the toroidal rotation of the confined plasma responds, exhibiting a strong counter-current rotation when Bx{nabla}B points away from the x point. Increased auxiliary heating power (rf, no momentum input) leads to an L-H transition at approximately twice the edge electron pressure gradient when Bx{nabla}B points away. As gradients rise prior to the transition, toroidal rotation ramps toward the co-current direction; the H mode is seen when the counter-current rotation imposed by the SOL flow becomes compensated. Remarkably, L-H thresholds in lower-limited discharges are identical to lower x-point discharges; SOL flows are also found similar, suggesting a connection.

  3. Adaptive Thresholds

    Energy Science and Technology Software Center (OSTI)

    2014-08-26

    ADAPT is a topological analysis code that allow to compute local threshold, in particular relevance based thresholds for features defined in scalar fields. The initial target application is vortex detection but the software is more generally applicable to all threshold based feature definitions.

  4. FAR Dollar Threshold Changes

    Broader source: Energy.gov [DOE]

    Attached is a table summarizing the new FAR dollar thresholds. These thresholds became effective on October 1, 2010.

  5. Current-induced electrical self-oscillations across out-of-plane threshold switches based on VO{sub 2} layers integrated in crossbars geometry

    SciTech Connect (OSTI)

    Beaumont, A.; Leroy, J.; Crunteanu, A.

    2014-04-21

    Electrically activated metal-insulator transition (MIT) in vanadium dioxide (VO{sub 2}) is widely studied from both fundamental and practical points of view. It can give valuable insights on the currently controversial phase transition mechanism in this material and, at the same time, allows the development of original MIT-based electronic devices. Electrically triggered insulator-metal transitions are demonstrated in novel out-of-plane, metal-oxide-metal type devices integrating a VO{sub 2} thin film, upon applying moderate threshold voltages. It is shown that the current-voltage characteristics of such devices present clear negative differential resistance effects supporting the onset of continuous, current-driven phase oscillations across the vanadium dioxide material. The frequencies of these self-sustained oscillations are ranging from 90 to 300 kHz and they may be tuned by adjusting the injected current. A phenomenological model of the device and its command circuit is developed, and allows to extract the analytical expressions of the oscillation frequencies and to simulate the electrical oscillatory phenomena developed across the VO{sub 2} material. Such out-of-plane devices may further contribute to the general understanding of the driving mechanism in metal-insulator transition materials and devices, a prerequisite to promising applications in high speed/high frequency networks of oscillatory or resistive memories circuits.

  6. Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

    SciTech Connect (OSTI)

    Zhou, Xin; Qiao, Ming; He, Yitao; Li, Zhaoji; Zhang, Bo

    2015-11-16

    Hot-carrier-induced linear drain current (I{sub dlin}) and threshold voltage (V{sub th}) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the V{sub th} increasing and the channel conductance (G{sub ch}) decreasing, then reduces I{sub dlin}. In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (G{sub d}), and then increases I{sub dlin}. Consequently, the eventual I{sub dlin} degradation is controlled by the competition of the two mechanisms due to conductance modulation in the both regions. Based on the model, it is explained that the measured I{sub dlin} anomalously increases while the V{sub th} is increasing with power law. The thin layer field pLDMOS exhibits more severe V{sub th} instability compared with thick SOI layer structure; as a result, it should be seriously evaluated in actual application in switching circuit.

  7. ARM - Publications: Science Team Meeting Documents

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GOES-8 cloud and radiative properties data set. The ARM GOES-8 data set is derived using the Layered Bispectral Threshold Method (LBTM, see Khaiyer et al., 2001 this conference). ...

  8. ARM - VAP Product - lbtm3minnisdar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    below or call us at 1-888-ARM-DATA. Send VAP Output : LBTM3MINNISDAR Layered Bispectral Threshold Method (LBTM) cloud products derived from GMS-5,Darwin Active Dates 2002.04.01...

  9. Threshold Reflectivity Zc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The black and red colors represent those for 0.33 (q 3) and 1(q 1), respectively. The dependency exhibits two distinct regimes: threshold function ...

  10. Hydrogen Threshold Cost Calculation

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Program Record (Offices of Fuel Cell Technologies) Record #: 11007 Date: March 25, 2011 Title: Hydrogen Threshold Cost Calculation Originator: Mark Ruth & Fred Joseck Approved by: Sunita Satyapal Date: March 24, 2011 Description: The hydrogen threshold cost is defined as the hydrogen cost in the range of $2.00-$4.00/gge (2007$) which represents the cost at which hydrogen fuel cell electric vehicles (FCEVs) are projected to become competitive on a cost per mile basis with the competing

  11. Threshold electron excitation of Na

    SciTech Connect (OSTI)

    Marinkovic, B.; Wang, P.; Gallagher, A. )

    1992-09-01

    Electron collisional excitation of the 4{ital D}, 5{ital D}, 4{ital P}, and 6{ital S} states of Na has been measured with about 30-meV energy resolution. Very rapid, unresolved threshold onsets are seen for all but the 4{ital P} state, and a near-threshold resonance is suggested by the 5{ital D} data. However, only weak undulations in the cross sections are observed above threshold.

  12. Probabilistic Threshold Criterion

    SciTech Connect (OSTI)

    Gresshoff, M; Hrousis, C A

    2010-03-09

    The Probabilistic Shock Threshold Criterion (PSTC) Project at LLNL develops phenomenological criteria for estimating safety or performance margin on high explosive (HE) initiation in the shock initiation regime, creating tools for safety assessment and design of initiation systems and HE trains in general. Until recently, there has been little foundation for probabilistic assessment of HE initiation scenarios. This work attempts to use probabilistic information that is available from both historic and ongoing tests to develop a basis for such assessment. Current PSTC approaches start with the functional form of the James Initiation Criterion as a backbone, and generalize to include varying areas of initiation and provide a probabilistic response based on test data for 1.8 g/cc (Ultrafine) 1,3,5-triamino-2,4,6-trinitrobenzene (TATB) and LX-17 (92.5% TATB, 7.5% Kel-F 800 binder). Application of the PSTC methodology is presented investigating the safety and performance of a flying plate detonator and the margin of an Ultrafine TATB booster initiating LX-17.

  13. Hydrogen Threshold Cost Calculation | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Threshold Cost Calculation Hydrogen Threshold Cost Calculation DOE Hydrogen Program Record number11007, Hydrogen Threshold Cost Calculation, documents the methodology and assumptions used to calculate that threshold cost. 11007_h2_threshold_costs.pdf (443.22 KB) More Documents & Publications DOE Hydrogen and Fuel Cells Program Record 11007: Hydrogen Threshold Cost Calculation Fuel Cell Technologies Program Overview: 2010 Annual Merit Review and Peer Evaluation Meeting Fuel Cell Technologies

  14. GC GUIDANCE ON MINOR CONSTRUCTION THRESHOLDS

    Energy Savers [EERE]

    GUIDANCE ON MINOR CONSTRUCTION THRESHOLDS We have been asked about how the Department implements what is known as the "minor construction threshold," which limits the amount of ...

  15. Threshold 21 Model | Open Energy Information

    Open Energy Info (EERE)

    Moderate Website: www.millennium-institute.orgintegratedplanningtoolsT21 Cost: Free Threshold 21 Model Screenshot References: Threshold 21 Model1 Related Tools Energy...

  16. Method for depositing layers of high quality semiconductor material

    DOE Patents [OSTI]

    Guha, Subhendu; Yang, Chi C.

    2001-08-14

    Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.

  17. Damage thresholds of thin film materials and high reflectors at 248 nm

    SciTech Connect (OSTI)

    Rainer, F.; Lowdermilk, W.H.; Milam, D.; Carniglia, C.K.; Hart, T.T.; Lichtenstein, T.L.

    1982-01-01

    Twenty-ns, 248-nm KrF laser pulses were used to measure laser damage thresholds for halfwave-thick layers of 15 oxide and fluoride coating materials, and for high reflectance coatings made with 13 combinations of these materials. The damage thresholds of the reflectors and single-layer films were compared to measurements of several properties of the halfwave-thick films to determine whether measurements of these properties of single-layer films to determine whether measurements of these properties of single-layer films were useful for identifying materials for fabrication of damage resistant coatings.

  18. ARM - VAP Product - lbtm3minnisman

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    minnisman Documentation lbtm-minnis : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : LBTM3MINNISMAN Layered Bispectral Threshold Method (LBTM) cloud products derived from GMS-5,Manus

  19. ARM - VAP Product - lbtm3minnisnau

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    minnisnau Documentation lbtm-minnis : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : LBTM3MINNISNAU Layered Bispectral Threshold Method (LBTM) cloud products derived from GMS-5,Nauru

  20. Compositional threshold for Nuclear Waste Glass Durability

    SciTech Connect (OSTI)

    Kruger, Albert A.; Farooqi, Rahmatullah; Hrma, Pavel R.

    2013-04-24

    Within the composition space of glasses, a distinct threshold appears to exist that separates "good" glasses, i.e., those which are sufficiently durable, from "bad" glasses of a low durability. The objective of our research is to clarify the origin of this threshold by exploring the relationship between glass composition, glass structure and chemical durability around the threshold region.

  1. DOE Hydrogen and Fuel Cells Program Record 11007: Hydrogen Threshold...

    Office of Environmental Management (EM)

    1007: Hydrogen Threshold Cost Calculation DOE Hydrogen and Fuel Cells Program Record 11007: Hydrogen Threshold Cost Calculation The hydrogen threshold cost is defined as the ...

  2. Acquisition Guide Chapter Updates for Threshold Changes

    Broader source: Energy.gov [DOE]

    The Federal Acquisition Regulation is regularly updated to revise dollar thresholds associated for various activities. Policy Flash 2011-15 provides a quick reference guide to the threshold changes that were effective October 1, 2010. This Flash is to inform you that the following Guide Chapters have been updated to reflect the threshold changes: Chapter 3.1 Chapter 6.1 Chapter 15.4-4 Chapter 16.1 Chapter 18.0 Chapter 37.1 Chapter 38.1

  3. CABLE TECHNOLOGY LABORATORIES, INC. DETERMINATION OF THRESHOLD...

    Office of Scientific and Technical Information (OSTI)

    Cable TABLE OF CONTENTS ABSTRACT INTRODUCTION DESCRIPTION OF TEST CABLES TEMPERATURE CONDITIONING OF TEST CABLES TESTING OF XLPE INSULATED CABLE BEFORE AGING Threshold ...

  4. DOE Contractor Work Force Restructuring Approval Thresholds

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Contractor Work Force Restructuring Approval Thresholds Up to 100 employees Contractor can ... to provide approval for NNSA work force restructurings in consultation with LM 501 ...

  5. CABLE TECHNOLOGY LABORATORIES, INC. DETERMINATION OF THRESHOLD...

    Office of Scientific and Technical Information (OSTI)

    CABLE TECHNOLOGY LABORATORIES, INC. DETERMINATION OF THRESHOLD AND MAXIMUM OPERATING ELECTRIC STRESSES FOR SELECTED HIGH VOLTAGE INSULATIONS Investigation of Aged Polymeric ...

  6. New photodisintegration threshold observable in

    SciTech Connect (OSTI)

    E.A. Wulf; R.S. Canon; Sally J. Gaff; J.H. Kelley; R.M. Prior; E.C. Schreiber; M. Spraker; D.R. Tilley; H.R. Weller; M. Viviani; A. Kievsky; S. Rosati; Rocco Schiavilla

    2000-02-01

    Measurements of the cross section, vector, and tensor analyzing powers, and linear gamma-ray polarization in the radiative capture reactions D(p,y){sup 3} He and p(d,y){sup 3}He at c.m. energies in the range 0-53 keV allow the determination of the reduced matrix elements (RMEs) relevant for these transitions. From these RMEs the value of the integral which determines the Gerasimov-Drell-Hearn sum rule for He is obtained in the threshold region, corresponding to two-body breakup, and compared with the results of an ab initio microscopic three-body model calculation.The theoretical predictions for the value of this integral based on a ''nucleons-only'' assumption are an order of magnitude smaller than experiment. The discrepancy is reduced to about a factor of 2 when two-body currents are taken into account. This factor of 2 is due to an almost exact cancellation between the dominant E1 RMEs in the theoretical calculation. The excess E1 strength observed experimentally could provide useful insights into the nuclear interaction at low energies.

  7. Methods for automatic trigger threshold adjustment

    DOE Patents [OSTI]

    Welch, Benjamin J; Partridge, Michael E

    2014-03-18

    Methods are presented for adjusting trigger threshold values to compensate for drift in the quiescent level of a signal monitored for initiating a data recording event, thereby avoiding false triggering conditions. Initial threshold values are periodically adjusted by re-measuring the quiescent signal level, and adjusting the threshold values by an offset computation based upon the measured quiescent signal level drift. Re-computation of the trigger threshold values can be implemented on time based or counter based criteria. Additionally, a qualification width counter can be utilized to implement a requirement that a trigger threshold criterion be met a given number of times prior to initiating a data recording event, further reducing the possibility of a false triggering situation.

  8. Initiation Pressure Thresholds from Three Sources

    SciTech Connect (OSTI)

    Souers, P C; Vitello, P

    2007-02-28

    Pressure thresholds are minimum pressures needed to start explosive initiation that ends in detonation. We obtain pressure thresholds from three sources. Run-to-detonation times are the poorest source but the fitting of a function gives rough results. Flyer-induced initiation gives the best results because the initial conditions are the best known. However, very thick flyers are needed to give the lowest, asymptotic pressure thresholds used in modern models and this kind of data is rarely available. Gap test data is in much larger supply but the various test sizes and materials are confusing. We find that explosive pressures are almost the same if the distance in the gap test spacers are in units of donor explosive radius. Calculated half-width time pulses in the spacers may be used to create a pressure-time curve similar to that of the flyers. The very-large Eglin gap tests give asymptotic thresholds comparable to extrapolated flyer results. The three sources are assembled into a much-expanded set of near-asymptotic pressure thresholds. These thresholds vary greatly with density: for TATB/LX-17/PBX 9502, we find values of 4.9 and 8.7 GPa at 1.80 and 1.90 g/cm{sup 3}, respectively.

  9. Effects of pulse duration on magnetostimulation thresholds

    SciTech Connect (OSTI)

    Saritas, Emine U.; Goodwill, Patrick W.; Conolly, Steven M.

    2015-06-15

    Purpose: Medical imaging techniques such as magnetic resonance imaging and magnetic particle imaging (MPI) utilize time-varying magnetic fields that are subject to magnetostimulation limits, which often limit the speed of the imaging process. Various human-subject experiments have studied the amplitude and frequency dependence of these thresholds for gradient or homogeneous magnetic fields. Another contributing factor was shown to be number of cycles in a magnetic pulse, where the thresholds decreased with longer pulses. The latter result was demonstrated on two subjects only, at a single frequency of 1.27 kHz. Hence, whether the observed effect was due to the number of cycles or due to the pulse duration was not specified. In addition, a gradient-type field was utilized; hence, whether the same phenomenon applies to homogeneous magnetic fields remained unknown. Here, the authors investigate the pulse duration dependence of magnetostimulation limits for a 20-fold range of frequencies using homogeneous magnetic fields, such as the ones used for the drive field in MPI. Methods: Magnetostimulation thresholds were measured in the arms of six healthy subjects (age: 27 ± 5 yr). Each experiment comprised testing the thresholds at eight different pulse durations between 2 and 125 ms at a single frequency, which took approximately 30–40 min/subject. A total of 34 experiments were performed at three different frequencies: 1.2, 5.7, and 25.5 kHz. A solenoid coil providing homogeneous magnetic field was used to induce stimulation, and the field amplitude was measured in real time. A pre-emphasis based pulse shaping method was employed to accurately control the pulse durations. Subjects reported stimulation via a mouse click whenever they felt a twitching/tingling sensation. A sigmoid function was fitted to the subject responses to find the threshold at a specific frequency and duration, and the whole procedure was repeated at all relevant frequencies and pulse durations

  10. Methods for threshold determination in multiplexed assays

    DOE Patents [OSTI]

    Tammero, Lance F. Bentley; Dzenitis, John M; Hindson, Benjamin J

    2014-06-24

    Methods for determination of threshold values of signatures comprised in an assay are described. Each signature enables detection of a target. The methods determine a probability density function of negative samples and a corresponding false positive rate curve. A false positive criterion is established and a threshold for that signature is determined as a point at which the false positive rate curve intersects the false positive criterion. A method for quantitative analysis and interpretation of assay results together with a method for determination of a desired limit of detection of a signature in an assay are also described.

  11. Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices

    SciTech Connect (OSTI)

    Wang, Yuhan; Comes, Ryan B.; Wolf, Stuart A.; Lu, Jiwei

    2015-11-25

    Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of this device as an electronic switch.

  12. Monolayer semiconductor nanocavity lasers with ultralow thresholds

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; et al

    2015-03-16

    Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter1–5, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC)6–8. However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots7, extreme difficulty in current injection8, and lackmore » of compatibility with electronic circuits7,8. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers7. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.« less

  13. DOE Contractor Work Force Restructuring Approval Thresholds

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Contractor Work Force Restructuring Approval Thresholds Up to 100 employees Contractor can make decision bit must notify DOE of intent of restructuring 101-200 employees DOE/NNSA field office is authorized to provide approval 201-500 employees LM is authorized to provide approval and NNSA Administrator is authorized to provide approval for NNSA work force restructurings in consultation with LM 501 and above employees Under Secretary/NNSA Administrator approval required

  14. Acoustic emission sensor radiation damage threshold experiment

    SciTech Connect (OSTI)

    Beeson, K.M.; Pepper, C.E.

    1994-09-01

    Determination of the threshold for damage to acoustic emission sensors exposed to radiation is important in their application to leak detection in radioactive waste transport and storage. Proper response to system leaks is necessary to ensure the safe operation of these systems. A radiation impaired sensor could provide ``false negative or false positive`` indication of acoustic signals from leaks within the system. Research was carried out in the Radiochemical Technology Division at Oak Ridge National Laboratory to determine the beta/gamma radiation damage threshold for acoustic emission sensor systems. The individual system consisted of an acoustic sensor mounted with a two part epoxy onto a stainless steel waveguide. The systems were placed in an irradiation fixture and exposed to a Cobalt-60 source. After each irradiation, the sensors were recalibrated by Physical Acoustics Corporation. The results were compared to the initial calibrations performed prior to irradiation and a control group, not exposed to radiation, was used to validate the results. This experiment determines the radiation damage threshold of each acoustic sensor system and verifies its life expectancy, usefulness and reliability for many applications in radioactive environments.

  15. Threshold photodetachment spectroscopy of negative ions

    SciTech Connect (OSTI)

    Kitsopoulos, T.N.

    1991-12-01

    This thesis is concerned with the development and application of high resolution threshold photodetachment spectroscopy of negative ions. Chapter I deals with the principles of our photodetachment technique, and in chapter II a detailed description of the apparatus is presented. The threshold photodetachment spectra of I{sup {minus}}, and SH{sup {minus}}, presented in the last sections of chapter II, indicated that a resolution of 3 cm{sup {minus}1} can be achieved using our technique. In chapter III the threshold photodetachment spectroscopy study of the transition state region of I + HI and I + Di reactions is discussed. Our technique probes the transition state region directly, and the results of our study are the first unambiguous observations of reactive resonances in a chemical reaction. Chapters IV, V and VI are concerned with the spectroscopy of small silicon and carbon clusters. From our spectra we were able to assign electronic state energies and vibrational frequencies for the low lying electronics states of Si{sub n} (n=2,3,4), C{sub 5} and their corresponding anions.

  16. Measurement and modeling of infrared nonlinear absorption coefficients and laser-induced damage thresholds in Ge and GaSb

    SciTech Connect (OSTI)

    Wagner, T. J.; Bohn, M. J.; Coutu, R. A. Jr.; Gonzalez, L. P.; Murray, J. M.; Guha, S.; Schepler, K. L.

    2010-10-15

    Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 {mu}m for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 {mu}m and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al{sub 2}O{sub 3} anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond pulses, respectively.

  17. Category 3 threshold quantities for hazard categorization of nonreactor facilities

    SciTech Connect (OSTI)

    Mandigo, R.L.

    1996-02-13

    This document provides the information necessary to determine Hazard Category 3 threshold quantities for those isotopes of interest not listed in WHC-CM-4-46, Section 4, Table 1.''Threshold Quantities.''

  18. Threshold Phenomena in a Throbbing Complex Plasma

    SciTech Connect (OSTI)

    Mikikian, Maxime; Coueedel, Lenaiec; Cavarroc, Marjorie; Tessier, Yves; Boufendi, Laiefa

    2010-08-13

    In complex plasmas, the trapped dust particle cloud is often characterized by a central dust-free region ('void'). The void induces a spatial inhomogeneity of the dust particle distribution and is at the origin of many intricate unstable phenomena. One type of this kind of behavior is the so-called heartbeat instability consisting of successive contractions and expansions of the void. This instability is characterized by a strong nonlinear dynamics which can reveal the occurrence of incomplete sequences corresponding to failed contractions. Experimental results based on high-speed imaging are presented for the first time and underline this threshold effect in both the dust cloud motion and the evolution of the plasma light emission.

  19. Review of recent theories and experiments for improving high-power microwave window breakdown thresholds

    SciTech Connect (OSTI)

    Chang Chao; Liu Guozhi; Tang Chuanxiang; Chen Changhua; Fang Jinyong

    2011-05-15

    Dielectric window breakdown is a serious challenge in high-power microwave (HPM) transmission and radiation. Breakdown at the vacuum/dielectric interface is triggered by multipactor and finally realized by plasma avalanche in the ambient desorbed or evaporated gas layer above the dielectric. Methods of improving breakdown thresholds are key challenges in HPM systems. First, the main theoretical and experimental progress is reviewed. Next, the mechanisms of multipactor suppression for periodic rectangular and triangular surface profiles by dynamic analysis and particle-in-cell simulations are surveyed. Improved HPM breakdown thresholds are demonstrated by proof-of-principle and multigigawatt experiments. The current theories and experiments of using dc magnetic field to resonantly accelerate electrons to suppress multipactor are also synthesized. These methods of periodic profiles and magnetic field may solve the key issues of HPM vacuum dielectric breakdown.

  20. Optical ranked-order filtering using threshold decomposition

    DOE Patents [OSTI]

    Allebach, Jan P.; Ochoa, Ellen; Sweeney, Donald W.

    1990-01-01

    A hybrid optical/electronic system performs median filtering and related ranked-order operations using threshold decomposition to encode the image. Threshold decomposition transforms the nonlinear neighborhood ranking operation into a linear space-invariant filtering step followed by a point-to-point threshold comparison step. Spatial multiplexing allows parallel processing of all the threshold components as well as recombination by a second linear, space-invariant filtering step. An incoherent optical correlation system performs the linear filtering, using a magneto-optic spatial light modulator as the input device and a computer-generated hologram in the filter plane. Thresholding is done electronically. By adjusting the value of the threshold, the same architecture is used to perform median, minimum, and maximum filtering of images. A totally optical system is also disclosed.

  1. Optical ranked-order filtering using threshold decomposition

    DOE Patents [OSTI]

    Allebach, J.P.; Ochoa, E.; Sweeney, D.W.

    1987-10-09

    A hybrid optical/electronic system performs median filtering and related ranked-order operations using threshold decomposition to encode the image. Threshold decomposition transforms the nonlinear neighborhood ranking operation into a linear space-invariant filtering step followed by a point-to-point threshold comparison step. Spatial multiplexing allows parallel processing of all the threshold components as well as recombination by a second linear, space-invariant filtering step. An incoherent optical correlation system performs the linear filtering, using a magneto-optic spatial light modulator as the input device and a computer-generated hologram in the filter plane. Thresholding is done electronically. By adjusting the value of the threshold, the same architecture is used to perform median, minimum, and maximum filtering of images. A totally optical system is also disclosed. 3 figs.

  2. Probabilistic Shock Iinitiation Thresholds and QMU Applications

    SciTech Connect (OSTI)

    Hrousis, C A; Gresshoff, M; Overturf, G E

    2009-04-10

    The Probabilistic Threshold Criterion (PTC) Project at LLNL develops phenomenological criteria for establishing margin of safety or performance margin on high explosive (HE) initiation in the high-speed impact regime, creating tools for safety assessment and design of initiation systems and HE trains in general. Until recently, there has been little foundation for probabilistic assessment of HE initiation scenarios. This work attempts to use probabilistic information that is available from both historic and ongoing tests to develop a basis for such assessment. Current PTC approaches start with the functional form of James Initiation Criterion as a backbone, and generalize to include varying areas of initiation and provide a probabilistic response based on test data. Recent work includes application of the PTC methodology to safety assessments involving a donor charge detonation and the need for assessment of a nearby acceptor charge's response, as well as flyer-acceptor configurations, with and without barriers. Results to date are in agreement with other less formal assessment protocols, and indicate a promising use for PTC-based assessments. In particular, there is interest in this approach because it supports the Quantified Margins and Uncertainties (QMU) framework for establishing confidence in the performance and/or safety of an HE system.

  3. MinorConstructionThresholdGuidance.PDF | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    MinorConstructionThresholdGuidance.PDF MinorConstructionThresholdGuidance.PDF (165.68 KB) More Documents & Publications Audit Report: OAS-M-15-02 CX-008733: Categorical Exclusion Determination Microsoft PowerPoint - 04 Melendez Rimando Restructuring of EM Portfolio Briefing 3 March 2010 rev 2 rcvd 8 Mar 1100 [Compatibi

  4. Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition

    SciTech Connect (OSTI)

    Ahn, Cheol Hyoun; Hee Kim, So; Gu Yun, Myeong; Koun Cho, Hyung

    2014-12-01

    In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents. The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition). The TFT with ascending step-composition channel structure (5 → 10 → 14 at. % Al composition) showed relatively negative threshold voltage (−3.7 V) and good instability characteristics with a reduced threshold voltage shift (Δ 1.4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents. Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.5 cm{sup 2}/V s. We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.

  5. Damage threshold of platinum coating used for optics for self...

    Office of Scientific and Technical Information (OSTI)

    used for optics for self-seeding of soft x-ray free electron laser Citation Details In-Document Search Title: Damage threshold of platinum coating used for optics for ...

  6. Incoherent photoproduction of {eta} mesons from the deuteron near threshold

    SciTech Connect (OSTI)

    Sibirtsev, A.; Elster, Ch.; Haidenbauer, J.; Speth, J.

    2001-08-01

    Incoherent photoproduction of the {eta} meson on the deuteron is studied for photon energies from threshold to 800 MeV. The dominant contribution, the {gamma}N-{eta}N amplitude, is described within an isobar model. The final state interaction derived from the CD-Bonn potential is included and found to be important for the description of the production cross section close to threshold. Possible effects from the {eta}N final state interaction are discussed.

  7. Photonic layered media

    DOE Patents [OSTI]

    Fleming, James G.; Lin, Shawn-Yu

    2002-01-01

    A new class of structured dielectric media which exhibit significant photonic bandstructure has been invented. The new structures, called photonic layered media, are easy to fabricate using existing layer-by-layer growth techniques, and offer the ability to significantly extend our practical ability to tailor the properties of such optical materials.

  8. Scintillator reflective layer coextrusion

    DOE Patents [OSTI]

    Yun, Jae-Chul; Para, Adam

    2001-01-01

    A polymeric scintillator has a reflective layer adhered to the exterior surface thereof. The reflective layer comprises a reflective pigment and an adhesive binder. The adhesive binder includes polymeric material from which the scintillator is formed. A method of forming the polymeric scintillator having a reflective layer adhered to the exterior surface thereof is also provided. The method includes the steps of (a) extruding an inner core member from a first amount of polymeric scintillator material, and (b) coextruding an outer reflective layer on the exterior surface of the inner core member. The outer reflective layer comprises a reflective pigment and a second amount of the polymeric scintillator material.

  9. Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Wednesday, 29 March 2006 00:00 A threshold law describes the dependence of a reaction ... threshold behavior with a threshold law or a departure from it can be a sensitive ...

  10. Threshold magnitudes for a multichannel correlation detector in background seismicity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Carmichael, Joshua D.; Hartse, Hans

    2016-04-01

    Colocated explosive sources often produce correlated seismic waveforms. Multichannel correlation detectors identify these signals by scanning template waveforms recorded from known reference events against "target" data to find similar waveforms. This screening problem is challenged at thresholds required to monitor smaller explosions, often because non-target signals falsely trigger such detectors. Therefore, it is generally unclear what thresholds will reliably identify a target explosion while screening non-target background seismicity. Here, we estimate threshold magnitudes for hypothetical explosions located at the North Korean nuclear test site over six months of 2010, by processing International Monitoring System (IMS) array data with a multichannelmore » waveform correlation detector. Our method (1) accounts for low amplitude background seismicity that falsely triggers correlation detectors but is unidentifiable with conventional power beams, (2) adapts to diurnally variable noise levels and (3) uses source-receiver reciprocity concepts to estimate thresholds for explosions spatially separated from the template source. Furthermore, we find that underground explosions with body wave magnitudes mb = 1.66 are detectable at the IMS array USRK with probability 0.99, when using template waveforms consisting only of P -waves, without false alarms. We conservatively find that these thresholds also increase by up to a magnitude unit for sources located 4 km or more from the Feb.12, 2013 announced nuclear test.« less

  11. Near-threshold photoproduction of Φ mesons from deuterium

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qian, X.; Chen, W.; Gao, H.; Hicks, K.; Kramer, K.; Laget, J. M.; Mibe, T.; Qiang, Y.; Stepanyan, S.; Tedeschi, D. J.; et al

    2011-01-05

    In this report, we measure the differential cross section onmore » $$\\phi$$-meson photoproduction from deuterium near the production threshold for a proton using the CLAS detector and a tagged-photon beam in Hall B at Jefferson Lab. The measurement was carried out by a triple coincidence detection of a proton, $K^+$ and $K^-$ near the theoretical production threshold of 1.57 GeV. Moreover, the extracted differential cross sections $$\\frac{d\\sigma}{dt}$$ for the initial photon energy from 1.65-1.75 GeV are consistent with predictions based on a quasifree mechanism. Ultimately, this experiment establishes a baseline for a future experimental search for an exotic $$\\phi$$-N bound state from heavier nuclear targets utilizing subthreshold/near-threshold production of $$\\phi$$ mesons.« less

  12. On the mixing time of geographical threshold graphs

    SciTech Connect (OSTI)

    Bradonjic, Milan

    2009-01-01

    In this paper, we study the mixing time of random graphs generated by the geographical threshold graph (GTG) model, a generalization of random geometric graphs (RGG). In a GTG, nodes are distributed in a Euclidean space, and edges are assigned according to a threshold function involving the distance between nodes as well as randomly chosen node weights. The motivation for analyzing this model is that many real networks (e.g., wireless networks, the Internet, etc.) need to be studied by using a 'richer' stochastic model (which in this case includes both a distance between nodes and weights on the nodes). We specifically study the mixing times of random walks on 2-dimensional GTGs near the connectivity threshold. We provide a set of criteria on the distribution of vertex weights that guarantees that the mixing time is {Theta}(n log n).

  13. Layered plasma polymer composite membranes

    DOE Patents [OSTI]

    Babcock, W.C.

    1994-10-11

    Layered plasma polymer composite fluid separation membranes are disclosed, which comprise alternating selective and permeable layers for a total of at least 2n layers, where n is [>=]2 and is the number of selective layers. 2 figs.

  14. Layered plasma polymer composite membranes

    DOE Patents [OSTI]

    Babcock, Walter C.

    1994-01-01

    Layered plasma polymer composite fluid separation membranes are disclosed, which comprise alternating selective and permeable layers for a total of at least 2n layers, where n is .gtoreq.2 and is the number of selective layers.

  15. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    SciTech Connect (OSTI)

    Fill, Matthias; Phocone AG, 8005 Zurich ; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

    2013-11-11

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  16. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  17. Multiple density layered insulator

    DOE Patents [OSTI]

    Alger, T.W.

    1994-09-06

    A multiple density layered insulator for use with a laser is disclosed which provides at least two different insulation materials for a laser discharge tube, where the two insulation materials have different thermoconductivities. The multiple layer insulation materials provide for improved thermoconductivity capability for improved laser operation. 4 figs.

  18. Multiple density layered insulator

    DOE Patents [OSTI]

    Alger, Terry W.

    1994-01-01

    A multiple density layered insulator for use with a laser is disclosed wh provides at least two different insulation materials for a laser discharge tube, where the two insulation materials have different thermoconductivities. The multiple layer insulation materials provide for improved thermoconductivity capability for improved laser operation.

  19. Multiple layer insulation cover

    DOE Patents [OSTI]

    Farrell, James J.; Donohoe, Anthony J.

    1981-11-03

    A multiple layer insulation cover for preventing heat loss in, for example, a greenhouse, is disclosed. The cover is comprised of spaced layers of thin foil covered fabric separated from each other by air spaces. The spacing is accomplished by the inflation of spaced air bladders which are integrally formed in the cover and to which the layers of the cover are secured. The bladders are inflated after the cover has been deployed in its intended use to separate the layers of the foil material. The sizes of the material layers are selected to compensate for sagging across the width of the cover so that the desired spacing is uniformly maintained when the cover has been deployed. The bladders are deflated as the cover is stored thereby expediting the storage process and reducing the amount of storage space required.

  20. Threshold responses to interacting global changes in a California grassland ecosystem

    SciTech Connect (OSTI)

    Field, Christopher; Cortinas, Susan

    2015-02-02

    Final Report for Threshold responses to interacting global changes in a California grassland ecosystem

  1. ARM - VAP Product - lbtm3minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    minnis Documentation lbtm-minnis : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : LBTM3MINNIS Layered Bispectral Threshold Method (LBTM) cloud products derived from GMS-5 Active Dates 1998.01.03 - 2003.05.21 Originating VAP Process Minnis Cloud Products Using LBTM Algorithm : LBTM-MINNIS Measurements The measurements below provided by this

  2. Compliant layer chucking surface

    DOE Patents [OSTI]

    Blaedel, Kenneth L.; Spence, Paul A.; Thompson, Samuel L.

    2004-12-28

    A method and apparatus are described wherein a thin layer of complaint material is deposited on the surface of a chuck to mitigate the deformation that an entrapped particle might cause in the part, such as a mask or a wafer, that is clamped to the chuck. The harder particle will embed into the softer layer as the clamping pressure is applied. The material composing the thin layer could be a metal or a polymer for vacuum or electrostatic chucks. It may be deposited in various patterns to affect an interrupted surface, such as that of a "pin" chuck, thereby reducing the probability of entrapping a particle.

  3. Boundary Layer Structure:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Boundary Layer Structure: a comparison between methods and sites Thiago Biscaro Suzane de Sá Jae-In Song Shaoyue "Emily" Qiu Mentors: Virendra Ghate and Ewan O'Connor July 24 2015 1 st ever ARM Summer Training Outline * IntroducQon * Methodology * Results - SGP - MAO - Comparison between the 2 sites * Conclusions INTRODUCTION Focus: esQmates of PBL height Boundary Layer: "The boUom layer of the troposphere that is in contact with the surface of the earth." (AMS, Glossary of

  4. Structured luminescence conversion layer

    DOE Patents [OSTI]

    Berben, Dirk; Antoniadis, Homer; Jermann, Frank; Krummacher, Benjamin Claus; Von Malm, Norwin; Zachau, Martin

    2012-12-11

    An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern.

  5. A Survey of Architectural Techniques for Near-Threshold Computing

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mittal, Sparsh

    2015-12-28

    Energy efficiency has now become the primary obstacle in scaling the performance of all classes of computing systems. In low-voltage computing and specifically, near-threshold voltage computing (NTC), which involves operating the transistor very close to and yet above its threshold voltage, holds the promise of providing many-fold improvement in energy efficiency. However, use of NTC also presents several challenges such as increased parametric variation, failure rate and performance loss etc. Our paper surveys several re- cent techniques which aim to offset these challenges for fully leveraging the potential of NTC. By classifying these techniques along several dimensions, we also highlightmore » their similarities and differences. Ultimately, we hope that this paper will provide insights into state-of-art NTC techniques to researchers and system-designers and inspire further research in this field.« less

  6. Threshold π0 Photoproduction on Transverse Polarised Protons at MAMI

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schumann, S.

    2015-09-14

    Polarisation-dependent differential cross sections σT associated with the target asymmetry T have been measured for the reaction γ p-→ p π0 with transverse target polarisation from π0 threshold up to photon energies of 190 MeV. Additionally, the data were obtained using a frozen-spin butanol target with the Crystal Ball / TAPS detector set-up and the Glasgow photon tagging system at the Mainz Microtron MAMI. Our results for σT have been used in combination with our previous measurements of the unpolarised cross section σ0 and the beam asymmetry Σ for a model-independent determination of S and P wave multipoles in themore » π0 threshold region, which includes for the first time a direct determination of the imaginary part of the E0+ multipole.« less

  7. Damage of multilayer optics with varying capping layers induced by focused extreme ultraviolet beam

    SciTech Connect (OSTI)

    Jody Corso, Alain; Nicolosi, Piergiorgio; Nardello, Marco; Guglielmina Pelizzo, Maria; Barkusky, Frank; Mann, Klaus; Mueller, Matthias

    2013-05-28

    Extreme ultraviolet Mo/Si multilayers protected by capping layers of different materials were exposed to 13.5 nm plasma source radiation generated with a table-top laser to study the irradiation damage mechanism. Morphology of single-shot damaged areas has been analyzed by means of atomic force microscopy. Threshold fluences were evaluated for each type of sample in order to determine the capability of the capping layer to protect the structure underneath.

  8. Predicting threshold and location of laser damage on optical surfaces

    DOE Patents [OSTI]

    Siekhaus, Wigbert

    1987-01-01

    An apparatus useful in the prediction of the damage threshold of various optical devices, the location of weak spots on such devices and the location, identification, and elimination of optical surface impurities comprising, a focused and pulsed laser, an photo electric detector/imaging means, and a timer. The weak spots emit photoelectrons when subjected to laser intensities that are less than the intensity actually required to produce the damage. The weak spots may be eliminated by sustained exposure to the laser beam.

  9. THRESHOLD FOR EXTENDED EMISSION IN SHORT GAMMA-RAY BURSTS

    SciTech Connect (OSTI)

    Norris, Jay P.; Gehrels, Neil

    2010-07-01

    The initial pulse complex (IPC) in short gamma-ray bursts is sometimes accompanied by a softer, low-intensity extended emission (EE) component. In cases where such a component is not observed, it is not clear if it is present but below the detection threshold. Using Bayesian Block (BB) methods, we measure the EE component and show that it is present in one-quarter of a Swift/BAT sample of 51 short bursts, as was found for the Compton/BATSE sample. We simulate bursts with EE to calibrate the BAT threshold for EE detection and show that this component would have been detected in nearly half of BAT short bursts if it were present, to intensities {approx}10{sup -2} counts cm{sup -2} s{sup -1}, a factor of 5 lower than actually observed in short bursts. In the BAT sample, the ratio of average EE intensity to IPC peak intensity, R{sub int}, ranges over a factor of 25, R{sub int} {approx} 3 x 10{sup -3} to 8 x 10{sup -2}. In comparison, for the average of the 39 bursts without an EE component, the 2{sigma} upper limit is R{sub int} < 8 x 10{sup -4}. These results suggest that a physical threshold effect operates near R{sub int} {approx} few x 10{sup -3} below which the EE component is not manifest.

  10. Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment Print Wednesday, 29 March 2006 00:00 A threshold law describes the dependence of a reaction yield near a reaction threshold. It is also a signature of the physical forces involved in the reaction, so the agreement of an observed threshold behavior with a threshold law or a departure from it can be a sensitive probe into how well the reaction physics is

  11. Layered electrode for electrochemical cells

    DOE Patents [OSTI]

    Swathirajan, Swathy; Mikhail, Youssef M.

    2001-01-01

    There is provided an electrode structure comprising a current collector sheet and first and second layers of electrode material. Together, the layers improve catalyst utilization and water management.

  12. Layered semiconductor neutron detectors

    DOE Patents [OSTI]

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  13. Predicting threshold and location of laser damage on optical surfaces

    DOE Patents [OSTI]

    Siekhaus, W.

    1985-02-04

    Disclosed is an apparatus useful in the prediction of the damage threshold of various optical devices, the location of weak spots on such devices and the location, identification, and elimination of optical surface impurities. The apparatus comprises a focused and pulsed laser, a photo electric detector/imaging means, and a timer. The weak spots emit photoelectrons when subjected to laser intensities that are less than the intensity actually required to produce the damage. The weak spots may be eliminated by sustained exposure to the laser beam.

  14. CNEEC - Atomic Layer Deposition Tutorial by Stacey Bent

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition

  15. The NEPA threshold question revisited: Proposed'' actions and continuing'' activities

    SciTech Connect (OSTI)

    Wolff, T.A. ); Hansen, R.P. )

    1993-01-01

    The National Environmental Policy Act (NEPA) requires Federal agencies to include a detailed statement'' in every recommendation or report on proposals'' for major Federal actions significantly affecting the quality of the human environment.'' Unless the three elements of a proposal are present (major, federal, and action), preparation of a detailed statement is not required. This paper addresses the practical decision-making dilemma that attends determinations of what types of Federal activities meet the NEPA threshold test under what kinds of varying circumstances. The authors' experience with the US Dept. of Energy (DOE) NEPA documentation is used to discuss how decisions may be made to determine whether a proposed action qualifies for a categorical exclusion'' or whether it requires preparation of an environmental assessment (EA) or an environmental impact statement (EIS). The concept of new'' actions versus continuing'' actions which may be bounded'' by previous NEPA documentation is also discussed. A dichotomous key for separating or combining Federal action'' candidates for different levels of NEPA documentation is provided. Leading court opinions on the threshold question and related issues are discussed in lay terms.

  16. Ionization Thresholds of Small Carbon Clusters: Tunable VUVExperiments and Theory

    SciTech Connect (OSTI)

    Belau, Leonid; Wheeler, Steven E.; Ticknor, Brian W.; Ahmed,Musahid; Leone, Stephen R.; Allen, Wesley D.; Schaefer III, Henry F.; Duncan, Michael A.

    2007-07-31

    Small carbon clusters (Cn, n = 2-15) are produced in amolecular beam by pulsed laser vaporization and studied with vacuumultraviolet (VUV) photoionization mass spectrometry. The required VUVradiation in the 8-12 eV range is provided by the Advanced Light Source(ALS) at the Lawrence Berkeley National Laboratory. Mass spectra atvarious ionization energies reveal the qualitative relative abundances ofthe neutral carbon clusters produced. By far the most abundant species isC3. Using the tunability of the ALS, ionization threshold spectra arerecorded for the clusters up to 15 atoms in size. The ionizationthresholds are compared to those measured previously with charge-transferbracketing methods. To interpret the ionization thresholds for differentcluster sizes, new ab initio calculations are carried out on the clustersfor n = 4-10. Geometric structures are optimized at the CCSD(T) levelwith cc-pVTZ (or cc-pVDZ) basis sets, and focal point extrapolations areapplied to both neutral and cation species to determine adiabatic andvertical ionization potentials. The comparison of computed and measuredionization potentials makes it possible to investigate the isomericstructures of the neutral clusters produced in this experiment. Themeasurements are inconclusive for the n = 4-6 species because ofunquenched excited electronic states. However, the data provide evidencefor the prominence of linear structures for the n = 7, 9, 11, 13 speciesand the presence of cyclic C10.

  17. Distortion of power law blinking with binning and thresholding

    SciTech Connect (OSTI)

    Amecke, Nicole; Heber, André; Cichos, Frank

    2014-03-21

    Fluorescence intermittency is a random switching between emitting (on) and non-emitting (off) periods found for many single chromophores such as semiconductor quantum dots and organic molecules. The statistics of the duration of on- and off-periods are commonly determined by thresholding the emission time trace of a single chromophore and appear to be power law distributed. Here we test with the help of simulations if the experimentally determined power law distributions can actually reflect the underlying statistics. We find that with the experimentally limited time resolution real power law statistics with exponents α{sub on/off} ≳ 1.6, especially if α{sub on} ≠ α{sub off} would not be observed as such in the experimental data after binning and thresholding. Instead, a power law appearance could simply be obtained from the continuous distribution of intermediate intensity levels. This challenges much of the obtained data and the models describing the so-called power law blinking.

  18. Pressure Systems Stored-Energy Threshold Risk Analysis

    SciTech Connect (OSTI)

    Paulsen, Samuel S.

    2009-08-25

    Federal Regulation 10 CFR 851, which became effective February 2007, brought to light potential weaknesses regarding the Pressure Safety Program at the Pacific Northwest National Laboratory (PNNL). The definition of a pressure system in 10 CFR 851 does not contain a limit based upon pressure or any other criteria. Therefore, the need for a method to determine an appropriate risk-based hazard level for pressure safety was identified. The Laboratory has historically used a stored energy of 1000 lbf-ft to define a pressure hazard; however, an analytical basis for this value had not been documented. This document establishes the technical basis by evaluating the use of stored energy as an appropriate criterion to establish a pressure hazard, exploring a suitable risk threshold for pressure hazards, and reviewing the methods used to determine stored energy. The literature review and technical analysis concludes the use of stored energy as a method for determining a potential risk, the 1000 lbf-ft threshold, and the methods used by PNNL to calculate stored energy are all appropriate. Recommendations for further program improvements are also discussed

  19. Layered seal for turbomachinery

    DOE Patents [OSTI]

    Sarawate, Neelesh Nandkumar; Morgan, Victor John; Weber, David Wayne

    2015-11-20

    The present application provides seal assemblies for reducing leakages between adjacent components of turbomachinery. The seal assemblies may include outer shims, and at least a portion of the outer shims may be substantially impervious. At least one of the outer shims may be configured for sealing engagement with seal slots of the adjacent components. The seal assemblies may also include at least one of an inner shim and a filler layer positioned between the outer shims. The at least one inner shim may be substantially solid and the at least one filler layer may be relatively porous. The seal assemblies may be sufficiently flexible to account for misalignment between the adjacent components, sufficiently stiff to meet assembly requirements, and sufficiently robust to operating meet requirements associated with turbomachinery.

  20. Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment Print A threshold law describes the dependence of a reaction yield near a reaction threshold. It is also a signature of the physical forces involved in the reaction, so the agreement of an observed threshold behavior with a threshold law or a departure from it can be a sensitive probe into how well the reaction physics is understood. A collaboration from Western Michigan University, the ALS, and Denison University has now shown

  1. Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Long-Range Validity of Threshold Laws in Inner-Shell Photodetachment Print A threshold law describes the dependence of a reaction yield near a reaction threshold. It is also a signature of the physical forces involved in the reaction, so the agreement of an observed threshold behavior with a threshold law or a departure from it can be a sensitive probe into how well the reaction physics is understood. A collaboration from Western Michigan University, the ALS, and Denison University has now shown

  2. Reexamination of an anomaly in near-threshold pair production

    SciTech Connect (OSTI)

    De Braeckeleer, L.; Adelberger, E.G.; Garcia, A. )

    1992-11-01

    We investigated a reported anomaly in near-threshold pair production, using radioactive sources to measure the {gamma}+Ge{r arrow}{ital e}{sup +}+{ital e}{sup {minus}}+Ge cross-section at {ital E}{sub {gamma}}=1063, 1086, 1112, 1173, 1213, 1299, 1332, and 1408 keV. Although the data agree with the theory (numerical calculations based on an exact partial-wave formulation for a screened central potential) at the higher energies, the data lie above the theory at 1063, 1082, and 1112 keV. The discrepancy is reduced by including the final-state Coulomb interaction between the {ital e}{sup +} and {ital e}{sup {minus}}.

  3. Above-threshold ionization beyond the dipole approximation

    SciTech Connect (OSTI)

    Klaiber, Michael; Hatsagortsyan, Karen Z.; Keitel, Christoph H.

    2005-03-01

    A generalization of the analytical theory of above-threshold ionization in the single active electron approximation is developed while taking into account leading non-dipole and relativistic corrections in the starting Hamiltonian. Special interest is placed on the high energy part of the photoelectron spectrum which consists of a plateau and a characteristic cutoff. It is shown that the correction due to the magnetic component of the laser field gives rise to a decrease of the plateau height, an increase of the maximal cutoff energy, and a drift of the emitted electrons in propagation direction of the laser field. Furthermore, the influence of the relativistic mass shift may become non-neglible by reducing the cutoff energy significantly. Spin effects or the Zitterbewegung play a comparably minor role in the investigated parameter regime of suboptical frequencies and high but not ultra-high laser intensities.

  4. Bone sarcoma in humans induced by radium: A threshold response?

    SciTech Connect (OSTI)

    Rowland, R.E.

    1996-08-01

    The radium 226 and radium 228 have induced malignancies in the skeleton (primarily bone sarcomas) of humans. They have also induced carcinomas in the paranasal sinuses and mastoid air cells. There is no evidence that any leukemias or any other solid cancers have been induced by internally deposited radium. This paper discuses a study conducted on the dial painter population. This study made a concerted effort to verify, for each of the measured radium cases, the published values of the skeletal dose and the initial intake of radium. These were derived from body content measurements made some 40 years after the radium intake. Corrections to the assumed radium retention function resulted in a considerable number of dose changes. These changes have changed the shape of the dose response function. It now appears that the induction of bone sarcomas is a threshold process.

  5. Resonances above the proton threshold in 26Si

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chipps, Kelly A.

    2016-03-06

    26Al remains an intriguing target for observational gamma-ray astronomy, thanks to its characteristic decay. The 25Al(p, )26Si reaction is part of a chain that bypasses the production of the observable 26Alg in favor of the isomeric state; its rate at novae temperatures is dominated by a resonance around 400 keV, the precise location and J assignment of which has been hotly debated. Considerable confusion in this regard has arisen from the use of outdated excitation energies and masses. Here, a reanalysis of previous work is completed to first, elucidate the confusion regarding the level structure just above the proton threshold,more » and second, provide focus to future studies.« less

  6. Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

    SciTech Connect (OSTI)

    Ma, H. J. Harsan E-mail: ariando@nus.edu.sg; Zeng, S. W.; Annadi, A.; Ariando E-mail: ariando@nus.edu.sg; Huang, Z.; Venkatesan, T.

    2015-08-15

    The two-dimensional electron gas (2DEG) formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO{sub 3} (LAO) and non-polar SrTiO{sub 3} (STO). Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La{sub 0.5}Sr{sub 0.5}TiO{sub 3} (LSTO) layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

  7. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    SciTech Connect (OSTI)

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar; Okyay, Ali K.; UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  8. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  9. Metal deposition using seed layers

    DOE Patents [OSTI]

    Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

    2013-11-12

    Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

  10. Coupling quantum dots to optical fiber: Low pump threshold laser in the red with a near top hat beam profile

    SciTech Connect (OSTI)

    Cheng, H.; Mironov, A. E.; Ni, J. H.; Yang, H. J.; Chen, W. W.; Dai, Z.; Park, S.-J.; Eden, J. G.; Dragic, P. D.; Dong, J.

    2015-02-23

    Direct coupling of the optical field in a ?244?nm thick, CdSe/ZnS quantum dot film to an optical fiber has yielded lasing in the red (? ? 644?nm) with a threshold pump energy density?layers of ?8?nm diameter quantum dots deposited onto the exterior surface of a 125??m diameter coreless silica fiber, this free-running oscillator produces 134 nJ in 3.6?ns FWHM pulses which correspond to 37?W of peak power from an estimated gain volume of ?4.5??10{sup ?7}?cm{sup 3}. Lasing was confirmed by narrowing of the output optical radiation in both the spectral and temporal domains, and the laser beam intensity profile approximates a top hat.

  11. The Cryogenic Dark Matter Search low ionization-threshold experiment

    SciTech Connect (OSTI)

    Basu Thakur, Ritoban

    2014-01-01

    Over 80 years ago we discovered the presence of Dark Matter in our universe. Endeavors in astronomy and cosmology are in consensus with ever improving precision that Dark Matter constitutes an essential 27% of our universe. The Standard Model of Particle Physics does not provide any answers to the Dark Matter problem. It is imperative that we understand Dark Matter and discover its fundamental nature. This is because, alongside other important factors, Dark Matter is responsible for formation of structure in our universe. The very construct in which we sit is defined by its abundance. The Milky Way galaxy, hence life, wouldn't have formed if small over densities of Dark Matter had not caused sufficient accretion of stellar material. Marvelous experiments have been designed based on basic notions to directly and in-directly study Dark Matter, and the Cryogenic Dark Matter Search (CDMS) experiment has been a pioneer and forerunner in the direct detection field. Generations of the CDMS experiment were designed with advanced scientific upgrades to detect Dark Matter particles of mass O(100) GeV/c2. This mass-scale was set primarily by predictions from Super Symmetry. Around 2013 the canonical SUSY predictions were losing some ground and several observations (rather hints of signals) from various experiments indicated to the possibility of lighter Dark Matter of mass O(10) GeV/c2. While the SuperCDMS experiment was probing the regular parameter space, the CDMSlite experiment was conceived to dedicatedly search for light Dark Matter using a novel technology. "CDMSlite" stands for CDMS - low ionization threshold experiment. Here we utilize a unique electron phonon coupling mechanism to measure ionization generated by scattering of light particles. Typically signals from such low energy recoils would be washed under instrumental noise. In CDMSlite via generation of Luke-Neganov phonons we can detect the small ionization energies, amplified in phonon

  12. Templated, layered manganese phosphate

    DOE Patents [OSTI]

    Thoma, Steven G.; Bonhomme, Francois R.

    2004-08-17

    A new crystalline maganese phosphate composition having an empirical formula: O). The compound was determined to crystallize in the trigonal space group P-3c1 with a=8.8706(4) .ANG., c=26.1580(2) .ANG., and V (volume)=1783 .ANG..sup.3. The structure consists of sheets of corner sharing Mn(II)O.sub.4 and PO.sub.4 tetrahedra with layers of (H.sub.3 NCH.sub.2 CH.sub.2).sub.3 N and water molecules in-between. The pronated (H.sub.3 NCH.sub.2 CH.sub.2).sub.3 N molecules provide charge balancing for the inorganic sheets. A network of hydrogen bonds between water molecules and the inorganic sheets holds the structure together.

  13. DOE Hydrogen and Fuel Cells Program Record 11007: Hydrogen Threshold Cost

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Calculation | Department of Energy 1007: Hydrogen Threshold Cost Calculation DOE Hydrogen and Fuel Cells Program Record 11007: Hydrogen Threshold Cost Calculation The hydrogen threshold cost is defined as the hydrogen cost in the range of $2.00-$4.00/gge (2007$), which represents the cost at which hydrogen fuel cell electric vehicles are projected to become competitive on a cost per mile basis with the competing vehicles (gasoline in hybrid-electric vehicles) in 2020. This record from the

  14. Laser damage threshold measurements of optical materials for direct laser accelerators

    SciTech Connect (OSTI)

    Soong, Ken; Byer, R. L.; Colby, E. R.; England, R. J.; Peralta, E. A.

    2012-12-21

    The laser-damage threshold is a fundamental limit for any dielectric laser-driven accelerator and is set by the material of the structure. In this paper, we present a theoretical model of the laser damage mechanism, in comparison with experimental data on the damage threshold of silicon. Additionally, we present damage threshold measurement data of various optical materials, most of which have not been previously characterized in the picosecond-regime.

  15. Laser thermoelastic generation in metals above the melt threshold

    SciTech Connect (OSTI)

    Every, A. G.; Utegulov, Z. N.; Veres, I. A.

    2013-11-28

    An approach is presented for calculating thermoelastic generation of ultrasound in a metal plate exposed to nanosecond pulsed laser heating, sufficient to cause melting but not ablation. Detailed consideration is given to the spatial and temporal profiles of the laser pulse, penetration of the laser beam into the sample, the appearance and subsequent growth and then contraction of the melt pool, and the time dependent thermal conduction in the melt and surrounding solid throughout. The excitation of the ultrasound takes place during and shortly after the laser pulse and occurs predominantly within the thermal diffusion length of a micron or so beneath the surface. It is shown how, because of this, the output of the thermal simulations can be expressed as axially symmetric transient radial and normal surface force distributions. The epicentral displacement response to these force distributions is obtained by two methods, the one based on the elastodynamic Green's functions for plate geometry determined by the Cagniard generalized ray method and the other using a finite element numerical method. The two approaches are in very close agreement. Numerical simulations are reported on the epicentral displacement response of a 3.12 mm thick tungsten plate irradiated with a 4 ns pulsed laser beam with Gaussian spatial profile, at intensities below and above the melt threshold.

  16. No-Impact Threshold Values for NRAP's Reduced Order Models

    SciTech Connect (OSTI)

    Last, George V.; Murray, Christopher J.; Brown, Christopher F.; Jordan, Preston D.; Sharma, Maneesh

    2013-02-01

    The purpose of this study was to develop methodologies for establishing baseline datasets and statistical protocols for determining statistically significant changes between background concentrations and predicted concentrations that would be used to represent a contamination plume in the Gen II models being developed by NRAP’s Groundwater Protection team. The initial effort examined selected portions of two aquifer systems; the urban shallow-unconfined aquifer system of the Edwards-Trinity Aquifer System (being used to develop the ROM for carbon-rock aquifers, and the a portion of the High Plains Aquifer (an unconsolidated and semi-consolidated sand and gravel aquifer, being used to development the ROM for sandstone aquifers). Threshold values were determined for Cd, Pb, As, pH, and TDS that could be used to identify contamination due to predicted impacts from carbon sequestration storage reservoirs, based on recommendations found in the EPA’s ''Unified Guidance for Statistical Analysis of Groundwater Monitoring Data at RCRA Facilities'' (US Environmental Protection Agency 2009). Results from this effort can be used to inform a ''no change'' scenario with respect to groundwater impacts, rather than the use of an MCL that could be significantly higher than existing concentrations in the aquifer.

  17. Processes for multi-layer devices utilizing layer transfer

    DOE Patents [OSTI]

    Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2015-02-03

    A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

  18. Oxygen-reducing catalyst layer

    DOE Patents [OSTI]

    O'Brien, Dennis P.; Schmoeckel, Alison K.; Vernstrom, George D.; Atanasoski, Radoslav; Wood, Thomas E.; Yang, Ruizhi; Easton, E. Bradley; Dahn, Jeffrey R.; O'Neill, David G.

    2011-03-22

    An oxygen-reducing catalyst layer, and a method of making the oxygen-reducing catalyst layer, where the oxygen-reducing catalyst layer includes a catalytic material film disposed on a substrate with the use of physical vapor deposition and thermal treatment. The catalytic material film includes a transition metal that is substantially free of platinum. At least one of the physical vapor deposition and the thermal treatment is performed in a processing environment comprising a nitrogen-containing gas.

  19. Layer-by-Layer Assembly of Enzymes on Carbon Nanotubes

    SciTech Connect (OSTI)

    Wang, Jun; Liu, Guodong; Lin, Yuehe

    2008-06-01

    The use of Layer-by-layer techniques for immobilizing several types of enzymes, e.g. glucose oxidase (GOx), horse radish oxidases(HRP), and choline oxidase(CHO) on carbon nanotubes and their applications for biosenseing are presented. The enzyme is immobilized on the negatively charged CNT surface by alternatively assembling a cationic polydiallyldimethyl-ammonium chloride (PDDA) layer and a enzyme layer. The sandwich-like layer structure (PDDA/enzyme/PDDA/CNT) formed by electrostatic assembling provides a favorable microenvironment to keep the bioactivity of enzyme and to prevent enzyme molecule leakage. The morphologies and electrocatalytic acitivity of the resulted enzyme film were characterized using TEM and electrochemical techniques, respectively. It was found that these enzyme-based biosensors are very sensitive, selective for detection of biomolecules, e.g. glucose, choline.

  20. Leakage pathway layer for solar cell

    SciTech Connect (OSTI)

    Luan, Andy; Smith, David; Cousins, Peter; Sun, Sheng

    2015-12-01

    Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.

  1. Double-layer ion acceleration triggered by ion magnetization in expanding radiofrequency plasma sources

    SciTech Connect (OSTI)

    Takahashi, Kazunori; Charles, Christine; Boswell, Rod W.; Fujiwara, Tamiya

    2010-10-04

    Ion energy distribution functions downstream of the source exit in magnetically expanding low-pressure plasmas are experimentally investigated for four source tube diameters ranging from about 5 to 15 cm. The magnetic-field threshold corresponding to a transition from a simple expanding plasma to a double layer-containing plasma is observed to increase with a decrease in the source tube diameter. The results demonstrate that for the four geometries, the double layer and the accelerated ion beam form when the ion Larmour radius in the source becomes smaller than the source tube radius, i.e., when the ions become magnetized in the source tube.

  2. Threshold selection for classification of MR brain images by clustering method

    SciTech Connect (OSTI)

    Moldovanu, Simona; Obreja, Cristian; Moraru, Luminita

    2015-12-07

    Given a grey-intensity image, our method detects the optimal threshold for a suitable binarization of MR brain images. In MR brain image processing, the grey levels of pixels belonging to the object are not substantially different from the grey levels belonging to the background. Threshold optimization is an effective tool to separate objects from the background and further, in classification applications. This paper gives a detailed investigation on the selection of thresholds. Our method does not use the well-known method for binarization. Instead, we perform a simple threshold optimization which, in turn, will allow the best classification of the analyzed images into healthy and multiple sclerosis disease. The dissimilarity (or the distance between classes) has been established using the clustering method based on dendrograms. We tested our method using two classes of images: the first consists of 20 T2-weighted and 20 proton density PD-weighted scans from two healthy subjects and from two patients with multiple sclerosis. For each image and for each threshold, the number of the white pixels (or the area of white objects in binary image) has been determined. These pixel numbers represent the objects in clustering operation. The following optimum threshold values are obtained, T = 80 for PD images and T = 30 for T2w images. Each mentioned threshold separate clearly the clusters that belonging of the studied groups, healthy patient and multiple sclerosis disease.

  3. D0 layer 0 innermost layer of silicon microstrip tracker

    SciTech Connect (OSTI)

    Hanagaki, K.; /Fermilab

    2006-01-01

    A new inner layer silicon strip detector has been built and will be installed in the existing silicon microstrip tracker in D0. They report on the motivation, design, and performance of this new detector.

  4. Fabrication of Emissible Metallic Layer-by-Layer Photonic Crystals...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    polymer is coated on the first polymer. A substrate or a multi-layer polymer structure is placed on the filled mold and the resulting structure is exposed to UV light (i.e., is UV...

  5. BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation

    SciTech Connect (OSTI)

    Feng, Jijun; Akimoto, Ryoichi

    2015-10-19

    Low threshold current ridge-waveguide BeZnCdSe quantum-well laser diodes (LDs) have been developed by completely etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, which can suppress the leakage current that flows laterally outside of the electrode. The waveguide LDs are covered with a thick SiO{sub 2} layer and planarized with chemical-mechanical polishing and a reactive ion etching process. Room-temperature lasing under continuous-wave condition is achieved with the laser cavity formed by the cleaved waveguide facets coated with high-reflectivity dielectric films. For a 4 μm-wide green LD lasing around a wavelength of 535 nm, threshold current and voltage of 7.07 mA and 7.89 V are achieved for a cavity length of 300 μm, and the internal differential quantum efficiency, internal absorption loss, gain constant, and nominal transparency current density are estimated to be 27%, 4.09 cm{sup −1}, 29.92 (cm × μm)/kA and 6.35 kA/(cm{sup 2 }× μm), respectively. This compact device can realize a significantly improved performance with much lower threshold power consumption, which would benefit the potential application for ZnSe-based green LDs as light sources in full-color display and projector devices installed in consumer products such as pocket projectors.

  6. JET/DIII-D size scaling of the H-mode power threshold

    SciTech Connect (OSTI)

    Carlstrom, T.N.; Campbell, D.J.; Cordey, J.G.

    1995-10-01

    Previous scaling results indicate that the H-mode power threshold increases nearly linearly with the line averaged density, {bar n}{sub e}, and the toroidal field, B{sub t}. The power threshold was measured in similar, ITER-like, discharges in JET and DIII-D, at the same {bar n}{sub e} and B{sub t} in order to determine the size scaling of the power threshold. The results indicate a size scaling proportional to the surface area, S{sup 0.5}, which is weaker than the linear surface area dependence previously assumed.

  7. Higgs boson gluon-fusion production beyond threshold in NLO QCD

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anastasiou, Charalampos; Duhr, Claude; Dulat, Falko; Furlan, Elisabetta; Gehrmann, Thomas; Herzog, Franz; Mistlberger, Bernhard

    2015-03-01

    In this article, we compute the gluon fusion Higgs boson cross-section at NLO through the second term in the threshold expansion. This calculation constitutes a major milestone towards the full NLO cross section. Our result has the best formal accuracy in the threshold expansion currently available, and includes contributions from collinear regions besides subleading corrections from soft and hard regions, as well as certain logarithmically enhanced contributions for general kinematics. We use our results to perform a critical appraisal of the validity of the threshold approximation at NLO in perturbative QCD.

  8. Higgs boson gluon-fusion production beyond threshold in N3LO QCD

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anastasiou, Charalampos; Duhr, Claude; Dulat, Falko; Furlan, Elisabetta; Gehrmann, Thomas; Herzog, Franz; Mistlberger, Bernhard

    2015-03-18

    In this study, we compute the gluon fusion Higgs boson cross-section at N3LO through the second term in the threshold expansion. This calculation constitutes a major milestone towards the full N3LO cross section. Our result has the best formal accuracy in the threshold expansion currently available, and includes contributions from collinear regions besides subleading corrections from soft and hard regions, as well as certain logarithmically enhanced contributions for general kinematics. We use our results to perform a critical appraisal of the validity of the threshold approximation at N3LO in perturbative QCD.

  9. Boundary Layer Cloud Turbulence Characteristics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Boundary Layer Cloud Turbulence Characteristics Virendra Ghate Bruce Albrecht Parameter Observational Readiness (/10) Modeling Need (/10) Cloud Boundaries 9 9 Cloud Fraction Variance Skewness Up/Downdraft coverage Dominant Freq. signal Dissipation rate ??? Observation-Modeling Interface

  10. Intermetallic Layers in Soldered Joints

    Energy Science and Technology Software Center (OSTI)

    1998-12-10

    ILAG solves the one-dimensional partial differential equations describing the multiphase, multicomponent, solid-state diffusion-controlled growth of intermetallic layers in soldered joints. This software provides an analysis capability for materials researchers to examine intermetallic growth mechanisms in a wide variety of defense and commercial applications involving both traditional and advanced materials. ILAG calculates the interface positions of the layers, as well as the spatial distribution of constituent mass fractions, and outputs the results at user-prescribed simulation times.

  11. Linking the micro and macro: L-H transition dynamics and threshold...

    Office of Scientific and Technical Information (OSTI)

    Linking the micro and macro: L-H transition dynamics and threshold physics Citation Details In-Document Search Title: Linking the micro and macro: L-H transition dynamics and ...

  12. N 3 LO Higgs boson and Drell-Yan production at threshold: The...

    Office of Scientific and Technical Information (OSTI)

    N 3 LO Higgs boson and Drell-Yan production at threshold: The one-loop two-emission contribution Citation Details In-Document Search Title: N 3 LO Higgs boson and Drell-Yan ...

  13. The FY 2007 Budget Request - On the Threshold of Incredible Advances |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 7 Budget Request - On the Threshold of Incredible Advances The FY 2007 Budget Request - On the Threshold of Incredible Advances DOE's Office of Energy Efficiency and Renewable Energy's fiscal year 2007 budget presentation. FY07_budget_request.pdf (598.17 KB) More Documents & Publications The FY 2008 Budget Request - Twenty in Ten: Strengthening America's Energy Security The FY 2006 Budget Request Federal Support for Hydrogen and Fuel Cell Technologies

  14. Observation of the tune dependence of the stability threshold current in the PSR (Proton Storage Ring)

    SciTech Connect (OSTI)

    Wang, Tai Sen F.; Colton, E.; Lombardi, A.; Neuffer, D.V.; Thiessen, H.A.

    1989-01-01

    In the high-intensity unbunched-beam experiments carried out in the Proton Storage Ring at Los Alamos National Laboratory, the threshold current of vertical transverse instability showed pronounced differences when the betatron tune varied across an integer. In this paper, we shall present our experimental observations and discuss the possible relations between the threshold current and the machine impedance. The possible effects related to the distorted closed orbit are also discussed. 5 refs., 3 figs., 1 tab.

  15. Increase of bulk optical damage threshold fluences of KDP crystals by laser irradiation and heat treatment

    DOE Patents [OSTI]

    Swain, J.E.; Stokowski, S.E.; Milam, D.; Kennedy, G.C.; Rainer, F.

    1982-07-07

    The bulk optical damage threshold fluence of potassium dihydrogen phosphate (KDP) crystals is increased by irradiating the crystals with laser pulses of duration 1 to 20 nanoseconds of increasing fluence, below the optical damage threshold fluence for untreated crystals, or by baking the crystals for times of the order of 24 hours at temperatures of 110 to 165/sup 0/C, or by a combination of laser irradiation and baking.

  16. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming

    2010-02-23

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  17. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming; Liao, Xianbo; Du, Wenhui

    2011-10-04

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  18. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming; Liao, Xianbo; Du, Wenhui

    2011-02-01

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  19. Estimating Alarm Thresholds for Process Monitoring Data under Different Assumptions about the Data Generating Mechanism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Burr, Tom; Hamada, Michael S.; Howell, John; Skurikhin, Misha; Ticknor, Larry; Weaver, Brian

    2013-01-01

    Process monitoring (PM) for nuclear safeguards sometimes requires estimation of thresholds corresponding to small false alarm rates. Threshold estimation dates to the 1920s with the Shewhart control chart; however, because possible new roles for PM are being evaluated in nuclear safeguards, it is timely to consider modern model selection options in the context of threshold estimation. One of the possible new PM roles involves PM residuals, where a residual is defined as residual = data − prediction. This paper reviews alarm threshold estimation, introduces model selection options, and considers a range of assumptions regarding the data-generating mechanism for PM residuals.more » Two PM examples from nuclear safeguards are included to motivate the need for alarm threshold estimation. The first example involves mixtures of probability distributions that arise in solution monitoring, which is a common type of PM. The second example involves periodic partial cleanout of in-process inventory, leading to challenging structure in the time series of PM residuals.« less

  20. Measurement and interpretation of threshold stress intensity factors for steels in high-pressure hydrogen gas.

    SciTech Connect (OSTI)

    Dadfarnia, Mohsen; Nibur, Kevin A.; San Marchi, Christopher W.; Sofronis, Petros; Somerday, Brian P.; Foulk, James W., III; Hayden, Gary A.

    2010-07-01

    Threshold stress intensity factors were measured in high-pressure hydrogen gas for a variety of low alloy ferritic steels using both constant crack opening displacement and rising crack opening displacement procedures. The sustained load cracking procedures are generally consistent with those in ASME Article KD-10 of Section VIII Division 3 of the Boiler and Pressure Vessel Code, which was recently published to guide design of high-pressure hydrogen vessels. Three definitions of threshold were established for the two test methods: K{sub THi}* is the maximum applied stress intensity factor for which no crack extension was observed under constant displacement; K{sub THa} is the stress intensity factor at the arrest position for a crack that extended under constant displacement; and K{sub JH} is the stress intensity factor at the onset of crack extension under rising displacement. The apparent crack initiation threshold under constant displacement, K{sub THi}*, and the crack arrest threshold, K{sub THa}, were both found to be non-conservative due to the hydrogen exposure and crack-tip deformation histories associated with typical procedures for sustained-load cracking tests under constant displacement. In contrast, K{sub JH}, which is measured under concurrent rising displacement and hydrogen gas exposure, provides a more conservative hydrogen-assisted fracture threshold that is relevant to structural components in which sub-critical crack extension is driven by internal hydrogen gas pressure.

  1. Measurement and interpretation of threshold stress intensity factors for steels in high-pressure hydrogen gas.

    SciTech Connect (OSTI)

    Nibur, Kevin A.

    2010-11-01

    Threshold stress intensity factors were measured in high-pressure hydrogen gas for a variety of low alloy ferritic steels using both constant crack opening displacement and rising crack opening displacement procedures. The sustained load cracking procedures are generally consistent with those in ASME Article KD-10 of Section VIII Division 3 of the Boiler and Pressure Vessel Code, which was recently published to guide design of high-pressure hydrogen vessels. Three definitions of threshold were established for the two test methods: K{sub THi}* is the maximum applied stress intensity factor for which no crack extension was observed under constant displacement; K{sub THa} is the stress intensity factor at the arrest position for a crack that extended under constant displacement; and K{sub JH} is the stress intensity factor at the onset of crack extension under rising displacement. The apparent crack initiation threshold under constant displacement, K{sub THi}*, and the crack arrest threshold, K{sub THa}, were both found to be non-conservative due to the hydrogen exposure and crack-tip deformation histories associated with typical procedures for sustained-load cracking tests under constant displacement. In contrast, K{sub JH}, which is measured under concurrent rising displacement and hydrogen gas exposure, provides a more conservative hydrogen-assisted fracture threshold that is relevant to structural components in which sub-critical crack extension is driven by internal hydrogen gas pressure.

  2. Doped LZO buffer layers for laminated conductors

    DOE Patents [OSTI]

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  3. Lubricant-infused nanoparticulate coatings assembled by layer...

    Office of Scientific and Technical Information (OSTI)

    Lubricant-infused nanoparticulate coatings assembled by layer-by-layer deposition Title: Lubricant-infused nanoparticulate coatings assembled by layer-by-layer deposition ...

  4. Organic photovoltaic cells utilizing ultrathin sensitizing layer

    DOE Patents [OSTI]

    Rand, Barry P.; Forrest, Stephen R.

    2011-05-24

    A photosensitive device includes a series of organic photoactive layers disposed between two electrodes. Each layer in the series is in direct contact with a next layer in the series. The series is arranged to form at least one donor-acceptor heterojunction, and includes a first organic photoactive layer comprising a first host material serving as a donor, a thin second organic photoactive layer comprising a second host material disposed between the first and a third organic photoactive layer, and the third organic photoactive layer comprising a third host material serving as an acceptor. The first, second, and third host materials are different. The thin second layer serves as an acceptor relative to the first layer or as a donor relative to the third layer.

  5. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  6. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  7. Chemical solution seed layer for rabits tapes

    DOE Patents [OSTI]

    Goyal, Amit; Paranthaman, Mariappan; Wee, Sung-Hun

    2014-06-10

    A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.

  8. Tail-ion transport and Knudsen layer formation in the presence of magnetic fields

    SciTech Connect (OSTI)

    Schmit, P. F.; Molvig, Kim; Nakhleh, C. W.

    2013-11-15

    Knudsen layer losses of tail fuel ions could reduce significantly the fusion reactivity of highly compressed cylindrical and spherical targets in inertial confinement fusion (ICF). With the class of magnetized ICF targets in mind, the effect of embedded magnetic fields on Knudsen layer formation is investigated for the first time. The modified energy scaling of ion diffusivity in magnetized hot spots is found to suppress the preferential losses of tail-ions perpendicular to the magnetic field lines to a degree that the tail distribution can be at least partially, if not fully, restored. Two simple threshold conditions are identified leading to the restoration of fusion reactivity in magnetized hot spots. A kinetic equation for tail-ion transport in the presence of a magnetic field is derived, and solutions to the equation are obtained numerically in simulations. Numerical results confirm the validity of the threshold conditions for restored reactivity and identify two different asymptotic regimes of the fusion fuel. While Knudsen layer formation is shown to be suppressed entirely in strongly magnetized cylindrical hot spot cavities, uniformly magnetized spherical cavities demonstrate remnant, albeit reduced, levels of tail-ion depletion.

  9. Linking the micro and macro: L-H transition dynamics and threshold physics

    SciTech Connect (OSTI)

    Malkov, M. A. Diamond, P. H.; Miki, K.; Rice, J. E.; Tynan, G. R.

    2015-03-15

    The links between the microscopic dynamics and macroscopic threshold physics of the L → H transition are elucidated. Emphasis is placed on understanding the physics of power threshold scalings, and especially on understanding the minimum in the power threshold as a function of density P{sub thr} (n). By extending a numerical 1D model to evolve both electron and ion temperatures, including collisional coupling, we find that the decrease in P{sub thr} (n) along the low-density branch is due to the combination of an increase in collisional electron-to-ion energy transfer and an increase in the heating fraction coupled to the ions. Both processes strengthen the edge diamagnetic electric field needed to lock in the mean electric field shear for the L→H transition. The increase in P{sub thr} (n) along the high-density branch is due to the increase with ion collisionality of damping of turbulence-driven shear flows. Turbulence driven shear flows are needed to trigger the transition by extracting energy from the turbulence. Thus, we identify the critical transition physics components of the separatrix ion heat flux and the zonal flow excitation. The model reveals a power threshold minimum in density scans as a crossover between the threshold decrease supported by an increase in heat fraction received by ions (directly or indirectly, from electrons) and a threshold increase, supported by the rise in shear flow damping. The electron/ion heating mix emerges as important to the transition, in that it, together with electron-ion coupling, regulates the edge diamagnetic electric field shear. The importance of possible collisionless electron-ion heat transfer processes is explained.

  10. Light-controlled electric Freedericksz threshold in dye doped liquid crystals

    SciTech Connect (OSTI)

    Lucchetti, L.; Catani, L.; Simoni, F.

    2014-05-28

    We report the results of measurements of the threshold of Freedericksz transition in a nematic liquid crystal doped by Methyl-red. We show that in case of dc field the threshold voltage can decrease or increase depending on the light dose, due to the light-induced desorption and adsorption of charge complexes from and on the irradiated surface, that has been recently demonstrated. This effect has the potential to be exploited in optical devices such as liquid crystal microlenses and spatial light modulators.

  11. Threshold Values for Identification of Contamination Predicted by Reduced-Order Models

    SciTech Connect (OSTI)

    Last, George V.; Murray, Christopher J.; Bott, Yi-Ju; Brown, Christopher F.

    2014-12-31

    The U.S. Department of Energys (DOEs) National Risk Assessment Partnership (NRAP) Project is developing reduced-order models to evaluate potential impacts on underground sources of drinking water (USDWs) if CO2 or brine leaks from deep CO2 storage reservoirs. Threshold values, below which there would be no predicted impacts, were determined for portions of two aquifer systems. These threshold values were calculated using an interwell approach for determining background groundwater concentrations that is an adaptation of methods described in the U.S. Environmental Protection Agencys Unified Guidance for Statistical Analysis of Groundwater Monitoring Data at RCRA Facilities.

  12. Threshold Values for Identification of Contamination Predicted by Reduced-Order Models

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Last, George V.; Murray, Christopher J.; Bott, Yi-Ju; Brown, Christopher F.

    2014-12-31

    The U.S. Department of Energy’s (DOE’s) National Risk Assessment Partnership (NRAP) Project is developing reduced-order models to evaluate potential impacts on underground sources of drinking water (USDWs) if CO2 or brine leaks from deep CO2 storage reservoirs. Threshold values, below which there would be no predicted impacts, were determined for portions of two aquifer systems. These threshold values were calculated using an interwell approach for determining background groundwater concentrations that is an adaptation of methods described in the U.S. Environmental Protection Agency’s Unified Guidance for Statistical Analysis of Groundwater Monitoring Data at RCRA Facilities.

  13. Experimental Determination of Damage Threshold Characteristics of IR Compatible Optical Materials

    SciTech Connect (OSTI)

    Soong, Ken

    2011-05-20

    The accelerating gradient in a laser-driven dielectric accelerating structure is often limited by the laser damage threshold of the structure. For a given laser-driven dielectric accelerator design, we can maximize the accelerating gradient by choosing the best combination of the accelerator's constituent material and operating wavelength. We present here a model of the damage mechanism from ultrafast infrared pulses and compare that model with experimental measurements of the damage threshold of bulk silicon. Additionally, we present experimental measurements of a variety of candidate materials, thin films, and nanofabricated accelerating structures.

  14. Optimized capping layers for EUV multilayers

    DOE Patents [OSTI]

    Bajt, Sasa; Folta, James A.; Spiller, Eberhard A.

    2004-08-24

    A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B.sub.4 C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B.sub.4 C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.

  15. Hurricane Sandy Contingency Operation-- Increase in Micro-Purchase and Simplified Acquisition Thresholds for Specific States and Counties

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Department of Energy (DOE) Senior Procurement Executive (SPE) has increased the micro-purchase and simplified acquisition thresholds for Hurricane Sandy Contingency Operation.

  16. Influence of emission threshold of explosive emission cathodes on current waveform in foilless diodes

    SciTech Connect (OSTI)

    Wu, P.; Liu, G. Z.; Huo, S. F.; Sun, J.; Chen, C. H.

    2015-08-15

    The emission threshold of explosive emission cathodes (EECs) is an important factor for beam quality. It can affect the explosive emission delay time, the plasma expansion process on the cathode surface, and even the current amplitude when the current is not fully space-charge-limited. This paper researches the influence of the emission threshold of an annular EEC on the current waveform in a foilless diode when the current is measured by a Rogowski coil. The particle-in-cell simulation which is performed under some tolerable and necessary simplifications shows that the long explosive emission delay time of high-threshold cathodes may leave an apparent peak of displacement current on the rise edge of the current waveform, and this will occur only when the electron emission starts after this peak. The experimental researches, which are performed under a diode voltage of 1 MV and a repetitive frequency of 20 Hz, demonstrate that the graphite cathode has a lower emission threshold and a longer lifetime than the stainless steel cathode according to the variation of the peak of displacement current on the rise edge of the current waveform.

  17. Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

    DOE Patents [OSTI]

    Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

    2013-06-11

    Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

  18. Low-threshold short-cavity diode laser for a miniature atomic clock

    SciTech Connect (OSTI)

    Kargapol'tsev, Sergei V; Velichansky, Vladimir L; Vasil'ev, V V; Kobyakova, M Sh; Morozyuk, A V; Shiryaeva, N V; Konyaev, V P

    2009-06-30

    Short-cavity diode lasers (SCDLs) emitting at the 894-nm D{sub 1} line of caesium are developed. Low threshold currents and power consumption will make it possible to use these lasers in chip-size atomic clocks (CSACs) and magnetometers. The SCDL parameters are comparable with the parameters of surface-emitting lasers. (lasers)

  19. Incorporation of trace elements in Portland cement clinker: Thresholds limits for Cu, Ni, Sn or Zn

    SciTech Connect (OSTI)

    Gineys, N.; Aouad, G.; Sorrentino, F.; Damidot, D.

    2011-11-15

    This paper aims at defining precisely, the threshold limits for several trace elements (Cu, Ni, Sn or Zn) which correspond to the maximum amount that could be incorporated into a standard clinker whilst reaching the limit of solid solution of its four major phases (C{sub 3}S, C{sub 2}S, C{sub 3}A and C{sub 4}AF). These threshold limits were investigated through laboratory synthesised clinkers that were mainly studied by X-ray Diffraction and Scanning Electron Microscopy. The reference clinker was close to a typical Portland clinker (65% C{sub 3}S, 18% C{sub 2}S, 8% C{sub 3}A and 8% C{sub 4}AF). The threshold limits for Cu, Ni, Zn and Sn are quite high with respect to the current contents in clinker and were respectively equal to 0.35, 0.5, 0.7 and 1 wt.%. It appeared that beyond the defined threshold limits, trace elements had different behaviours. Ni was associated with Mg as a magnesium nickel oxide (MgNiO{sub 2}) and Sn reacted with lime to form a calcium stannate (Ca{sub 2}SnO{sub 4}). Cu changed the crystallisation process and affected therefore the formation of C{sub 3}S. Indeed a high content of Cu in clinker led to the decomposition of C{sub 3}S into C{sub 2}S and of free lime. Zn, in turn, affected the formation of C{sub 3}A. Ca{sub 6}Zn{sub 3}Al{sub 4}O{sub 15} was formed whilst a tremendous reduction of C{sub 3}A content was identified. The reactivity of cements made with the clinkers at the threshold limits was followed by calorimetry and compressive strength measurements on cement paste. The results revealed that the doped cements were at least as reactive as the reference cement.

  20. Inkjet Deposition of Layer-by-Layer Assembled Films

    SciTech Connect (OSTI)

    Andres, C. M.; Kotov, Nicholas A.

    2010-09-23

    Layer-by-layer assembly (LBL) can create advanced composites with exceptional properties unavailable by other means, but the laborious deposition process and multiple dipping cycles hamper their utilization in microtechnologies and electronics. Multiple rinse steps provide both structural control and thermodynamic stability to LBL multilayers, but they significantly limit their practical applications and contribute significantly to the processing time and waste. Here we demonstrate that by employing inkjet technology one can deliver the necessary quantities of LBL components required for film buildup without excess, eliminating the need for repetitive rinsing steps. This feature differentiates this approach from all other recognized LBL modalities. Using a model system of negatively charged gold nanoparticles and positively charged poly(diallyldimethylammonium) chloride, the material stability, nanoscale control over thickness, and particle coverage offered by the inkjet LBL technique are shown to be equal or better than the case of multilayers made with traditional dipping cycles. The opportunity for fast deposition of complex metallic patterns using a simple inkjet printer is also shown. The additive nature of LBL deposition based on the formation of insoluble nanoparticle-polyelectrolyte complexes of various compositions provides an excellent opportunity for versatile, multicomponent, and noncontact patterning for the simple production of stratified patterns that are much needed in advanced devices.

  1. ARM - Measurement - Planetary boundary layer height

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govMeasurementsPlanetary boundary layer height ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Measurement : Planetary boundary layer height Top of the planetary boundary layer; also known as depth or height of the mixing layer. Categories Atmospheric State Instruments The above measurement is considered scientifically relevant for the following instruments. Refer to the datastream (netcdf) file headers of each

  2. Biaxially textured metal substrate with palladium layer

    DOE Patents [OSTI]

    Robbins, William B.

    2002-12-31

    Described is an article comprising a biaxially textured metal substrate and a layer of palladium deposited on at least one major surface of the metal substrate; wherein the palladium layer has desired in-plane and out-of-plane crystallographic orientations, which allow subsequent layers that are applied on the article to also have the desired orientations.

  3. Dense, layered membranes for hydrogen separation

    DOE Patents [OSTI]

    Roark, Shane E.; MacKay, Richard; Mundschau, Michael V.

    2006-02-21

    This invention provides hydrogen-permeable membranes for separation of hydrogen from hydrogen-containing gases. The membranes are multi-layer having a central hydrogen-permeable layer with one or more catalyst layers, barrier layers, and/or protective layers. The invention also relates to membrane reactors employing the hydrogen-permeable membranes of the invention and to methods for separation of hydrogen from a hydrogen-containing gas using the membranes and reactors. The reactors of this invention can be combined with additional reactor systems for direct use of the separated hydrogen.

  4. Solar cell with silicon oxynitride dielectric layer

    SciTech Connect (OSTI)

    Shepherd, Michael; Smith, David D

    2015-04-28

    Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0layer is disposed on the back surface of the portion of the substrate. A semiconductor layer is disposed on the silicon oxynitride dielectric layer.

  5. Vibrational Feshbach resonances in near threshold HOCO{sup -} photodetachment: a theoretical study

    SciTech Connect (OSTI)

    Miyabe, Shungo; Haxton, Dan; Lawler, Keith; Orel, Ann; McCurdy, Bill; Rescigno, Tom

    2011-03-02

    The results of a theoretical study of HOCO{sup ?} photodetachment are presented, with a view toward understanding the origin of two peaks observed by Lu and Continetti (Phys. Rev. Lett. 99, 113005 (2007)) in the photoelectron kinetic energy spectrum very close to threshold. It is shown that the peaks can be attributed to vibrational Feshbach resonances of dipole-bound trans-HOCO{sup ?}, and not s- and p-wave shape resonances as previously assumed. Fixed-nuclei variational electron-HOCO scattering calculations are used to compute photodetachment cross sections and laboratory-frame photoelectron angular distributions. The calculations show a broad A??(#25;{pi}*)-shape resonance several eV above threshold.

  6. Communication: Classical threshold law for ion-neutral-neutral three-body recombination

    SciTech Connect (OSTI)

    Pérez-Ríos, Jesús; Greene, Chris H.

    2015-07-28

    A very recently method for classical trajectory calculations for three-body collision [Pérez-Ríos et al., J. Chem. Phys. 140, 044307 (2014)] has been applied to describe ion-neutral-neutral ternary processes for low energy collisions: 0.1 mK–10 mK. As a result, a threshold law for the three-body recombination cross section is obtained and corroborated numerically. The derived threshold law predicts the formation of weakly bound dimers, with binding energies comparable to the collision energy of the collisional partners. In this low energy range, this analysis predicts that molecular ions should dominate over molecular neutrals as the most products formed.

  7. Mixing of partial waves near B*B̄* threshold in e⁺e⁻ annihilation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xin; Voloshin, M. B.

    2013-05-31

    We consider the production of B*B̄* meson pairs in e⁺e⁻ annihilation near the threshold. The rescattering due to pion exchange between the mesons results in a mixing between three partial wave amplitudes: two P-wave amplitudes with the total spin of the meson pair S=0 and S=2 and an F-wave amplitude. The mixing due to pion exchange with a low momentum transfer is calculable up to c.m. energy E≈15–20 MeV above the threshold. We find that the P–F mixing is numerically quite small in this energy range, while the mixing of the two P-wave amplitudes is rapidly changing with energy andmore » can reach of order one at such low energies.« less

  8. Higher certainty of the laser-induced damage threshold test with a redistributing data treatment

    SciTech Connect (OSTI)

    Jensen, Lars; Mrohs, Marius; Gyamfi, Mark; Mädebach, Heinrich; Ristau, Detlev

    2015-10-15

    As a consequence of its statistical nature, the measurement of the laser-induced damage threshold holds always risks to over- or underestimate the real threshold value. As one of the established measurement procedures, the results of S-on-1 (and 1-on-1) tests outlined in the corresponding ISO standard 21 254 depend on the amount of data points and their distribution over the fluence scale. With the limited space on a test sample as well as the requirements on test site separation and beam sizes, the amount of data from one test is restricted. This paper reports on a way to treat damage test data in order to reduce the statistical error and therefore measurement uncertainty. Three simple assumptions allow for the assignment of one data point to multiple data bins and therefore virtually increase the available data base.

  9. Threshold ?0 Photoproduction on Transverse Polarised Protons at MAMI

    SciTech Connect (OSTI)

    Schumann, S.

    2015-09-14

    Polarisation-dependent differential cross sections ?T associated with the target asymmetry T have been measured for the reaction ? p-? p ?0 with transverse target polarisation from ?0 threshold up to photon energies of 190 MeV. Additionally, the data were obtained using a frozen-spin butanol target with the Crystal Ball / TAPS detector set-up and the Glasgow photon tagging system at the Mainz Microtron MAMI. Our results for ?T have been used in combination with our previous measurements of the unpolarised cross section ?0 and the beam asymmetry ? for a model-independent determination of S and P wave multipoles in the ?0 threshold region, which includes for the first time a direct determination of the imaginary part of the E0+ multipole.

  10. Multi Layer Contaminant Migration Model

    Energy Science and Technology Software Center (OSTI)

    1999-07-28

    This computer software augments and enhances certain calculation included in the previously copyrighted Vadose Zone Contaminant Migration Model. The computational method used in this model recognizes the heterogenous nature of the soils and attempts to account for the variability by using four separate layers to simulate the flow of water through the vadose zone. Therefore, the pore-water velocity calculated by the code will be different than the previous model because it accounts for a widermore » variety of soil properties encountered in the vadose zone. This model also performs an additional screening step than in the previous model. In this model the higher value of two different types of Soil Screening Levels are compared to soil concentrations of contaminants. If the contaminant concentration exceeds the highest of two SSLs, then that contaminant is listed. This is consistent with USEPA's Soil Screening Guidance.« less

  11. Determination of the Z` Mass and Couplings Below Threshold at the NLC

    SciTech Connect (OSTI)

    Rizzo, Thomas G.

    1996-12-31

    We investigate the capability of the NLC to indirectly determine both the mass as well as the couplings to leptons and b-quarks of a new neutral gauge boson below direct production threshold. By using data collected at several different values of the collide center of mass energy, we demonstrate how this can be done in an anonymous and model- independent manner. The procedure can be easily extended to the top and charm quark couplings.

  12. Stochastic generation of explicit pore structures by thresholding Gaussian random fields

    SciTech Connect (OSTI)

    Hyman, Jeffrey D.; Winter, C. Larrabee

    2014-11-15

    We provide a description and computational investigation of an efficient method to stochastically generate realistic pore structures. Smolarkiewicz and Winter introduced this specific method in pores resolving simulation of Darcy flows (Smolarkiewicz and Winter, 2010 [1]) without giving a complete formal description or analysis of the method, or indicating how to control the parameterization of the ensemble. We address both issues in this paper. The method consists of two steps. First, a realization of a correlated Gaussian field, or topography, is produced by convolving a prescribed kernel with an initial field of independent, identically distributed random variables. The intrinsic length scales of the kernel determine the correlation structure of the topography. Next, a sample pore space is generated by applying a level threshold to the Gaussian field realization: points are assigned to the void phase or the solid phase depending on whether the topography over them is above or below the threshold. Hence, the topology and geometry of the pore space depend on the form of the kernel and the level threshold. Manipulating these two user prescribed quantities allows good control of pore space observables, in particular the Minkowski functionals. Extensions of the method to generate media with multiple pore structures and preferential flow directions are also discussed. To demonstrate its usefulness, the method is used to generate a pore space with physical and hydrological properties similar to a sample of Berea sandstone. -- Graphical abstract: -- Highlights: An efficient method to stochastically generate realistic pore structures is provided. Samples are generated by applying a level threshold to a Gaussian field realization. Two user prescribed quantities determine the topology and geometry of the pore space. Multiple pore structures and preferential flow directions can be produced. A pore space based on Berea sandstone is generated.

  13. Interplay of threshold resummation and hadron mass corrections in deep inelastic processes

    SciTech Connect (OSTI)

    Accardi, Alberto; Anderle, Daniele P.; Ringer, Felix

    2015-02-01

    We discuss hadron mass corrections and threshold resummation for deep-inelastic scattering lN-->l'X and semi-inclusive annihilation e+e- → hX processes, and provide a prescription how to consistently combine these two corrections respecting all kinematic thresholds. We find an interesting interplay between threshold resummation and target mass corrections for deep-inelastic scattering at large values of Bjorken xB. In semi-inclusive annihilation, on the contrary, the two considered corrections are relevant in different kinematic regions and do not affect each other. A detailed analysis is nonetheless of interest in the light of recent high precision data from BaBar and Belle on pion and kaon production, with which we compare our calculations. For both deep inelastic scattering and single inclusive annihilation, the size of the combined corrections compared to the precision of world data is shown to be large. Therefore, we conclude that these theoretical corrections are relevant for global QCD fits in order to extract precise parton distributions at large Bjorken xB, and fragmentation functions over the whole kinematic range.

  14. High-Power Electrostatic Discharges in PETN: Threshold and Scaling Experiments

    SciTech Connect (OSTI)

    Liou, W; McCarrick, J F; Hodgin, R L; Phillips, D F

    2010-03-05

    There is a considerable set of data establishing the safety of PETN-based detonators that are insulted by electrostatic discharge (ESD) from a human body. However, the subject of ESD safety has garnered renewed interest because of the sparse data on high-power, low-impedance discharges that result when the source is a metallic object such as a tool. Experiments on as-built components, using pin-to-cap fault circuits through PETN-based detonators, showed significant evidence of a power dependence but with a very broad energy threshold and some uncertainty in the breakdown path. We have performed a series of experiments using a well-defined arc discharge path and a well-characterized source that is capable of independent variation of energy and power. Studies include threshold variation with power, arc length, powder surface area, and surface vs. bulk discharge paths. We find that an energy threshold variation with power does not appear to exist in the tested range of fractions to tens of MW, and that there are many subtleties to proper energy and power bookkeeping. We also present some test results for PBX 9407.

  15. Temperature threshold for nanorod structuring of metal and oxide films grown by glancing angle deposition

    SciTech Connect (OSTI)

    Deniz, Derya; Lad, Robert J.

    2011-01-15

    Thin films of tin (Sn), aluminum (Al), gold (Au), ruthenium (Ru), tungsten (W), ruthenium dioxide (RuO{sub 2}), tin dioxide (SnO{sub 2}), and tungsten trioxide (WO{sub 3}) were grown by glancing angle deposition (GLAD) to determine the nanostructuring temperature threshold, {Theta}{sub T}, above which adatom surface diffusion becomes large enough such that nanorod morphology is no longer formed during growth. The threshold was found to be lower in metals compared to oxides. Films were grown using both dc and pulsed dc magnetron sputtering with continuous substrate rotation over the temperature range from 291 to 866 K. Film morphologies, structures, and compositions were characterized by high resolution scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Films were also grown in a conventional configuration for comparison. For elemental metals, nanorod structuring occurs for films with melting points higher than that of Al (933 K) when grown at room temperature with a rotation rate of {approx}5 rpm, corresponding to a value of {Theta}{sub T}{approx_equal}0.33{+-}0.01. For the oxide films, a value of {Theta}{sub T}{approx_equal}0.5 was found, above which GLAD nanorod structuring does not occur. The existence of a nanostructuring temperature threshold in both metal and oxide GLAD films can be attributed to greater adatom mobilities as temperature is increased resulting in nonkinetically limited film nucleation and growth processes.

  16. A Low-threshold Analysis of CDMS Shallow-site Data

    SciTech Connect (OSTI)

    Akerib, D.S.; Attisha, M.J.; Baudis, L.; Bauer, D.A.; Bolozdynya, A.I.; Brink, P.L.; Bunker, R.; Cabrera, B.; Caldwell, D.O.; Chang, C.L.; Clarke, R.M.; Cooley, J.; Crisler, M.B.; Cushman, P.; DeJongh, F.; Dixon, R.; Driscoll, D.D.; Filippini, J.; Funkhouser, S.; Gaitskell, R.J.; Golwala, S.R.; /Caltech /Fermilab /Fermilab /Colorado U., Denver /Case Western Reserve U. /Texas A-M /Minnesota U. /UC, Berkeley /UC, Berkeley /Caltech /Stanford U., Phys. Dept. /UC, Santa Barbara /Stanford U., Phys. Dept. /Minnesota U. /Queen's U., Kingston /Minnesota U. /St. Olaf Coll. /Florida U. /LBL, Berkeley /UC, Berkeley /Texas A-M /UC, Santa Barbara /Syracuse U. /UC, Berkeley /Princeton U. /Case Western Reserve U. /Stanford U., Phys. Dept. /UC, Santa Barbara /Fermilab /Santa Clara U.

    2012-06-04

    Data taken during the final shallow-site run of the first tower of the Cryogenic Dark Matter Search (CDMS II) detectors have been reanalyzed with improved sensitivity to small energy depositions. Four {approx}224 g germanium and two {approx}105 g silicon detectors were operated at the Stanford Underground Facility (SUF) between December 2001 and June 2002, yielding 118 live days of raw exposure. Three of the germanium and both silicon detectors were analyzed with a new low-threshold technique, making it possible to lower the germanium and silicon analysis thresholds down to the actual trigger thresholds of {approx}1 and {approx}2 keV, respectively. Limits on the spin-independent cross section for weakly interacting massive particles (WIMPs) to elastically scatter from nuclei based on these data exclude interesting parameter space for WIMPs with masses below 9 GeV/c{sup 2}. Under standard halo assumptions, these data partially exclude parameter space favored by interpretations of the DAMA/LIBRA and CoGeNT experiments data as WIMP signals, and exclude new parameter space for WIMP masses between 3 and 4 GeV/c{sup 2}.

  17. Interplay of threshold resummation and hadron mass corrections in deep inelastic processes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Accardi, Alberto; Anderle, Daniele P.; Ringer, Felix

    2015-02-01

    We discuss hadron mass corrections and threshold resummation for deep-inelastic scattering lN-->l'X and semi-inclusive annihilation e+e- → hX processes, and provide a prescription how to consistently combine these two corrections respecting all kinematic thresholds. We find an interesting interplay between threshold resummation and target mass corrections for deep-inelastic scattering at large values of Bjorken xB. In semi-inclusive annihilation, on the contrary, the two considered corrections are relevant in different kinematic regions and do not affect each other. A detailed analysis is nonetheless of interest in the light of recent high precision data from BaBar and Belle on pion and kaonmore » production, with which we compare our calculations. For both deep inelastic scattering and single inclusive annihilation, the size of the combined corrections compared to the precision of world data is shown to be large. Therefore, we conclude that these theoretical corrections are relevant for global QCD fits in order to extract precise parton distributions at large Bjorken xB, and fragmentation functions over the whole kinematic range.« less

  18. Nanomanufacturing : nano-structured materials made layer-by-layer.

    SciTech Connect (OSTI)

    Cox, James V.; Cheng, Shengfeng; Grest, Gary Stephen; Tjiptowidjojo, Kristianto; Reedy, Earl David, Jr.; Fan, Hongyou; Schunk, Peter Randall; Chandross, Michael Evan; Roberts, Scott A.

    2011-10-01

    Large-scale, high-throughput production of nano-structured materials (i.e. nanomanufacturing) is a strategic area in manufacturing, with markets projected to exceed $1T by 2015. Nanomanufacturing is still in its infancy; process/product developments are costly and only touch on potential opportunities enabled by growing nanoscience discoveries. The greatest promise for high-volume manufacturing lies in age-old coating and imprinting operations. For materials with tailored nm-scale structure, imprinting/embossing must be achieved at high speeds (roll-to-roll) and/or over large areas (batch operation) with feature sizes less than 100 nm. Dispersion coatings with nanoparticles can also tailor structure through self- or directed-assembly. Layering films structured with these processes have tremendous potential for efficient manufacturing of microelectronics, photovoltaics and other topical nano-structured devices. This project is designed to perform the requisite R and D to bring Sandia's technology base in computational mechanics to bear on this scale-up problem. Project focus is enforced by addressing a promising imprinting process currently being commercialized.

  19. Superconductive articles including cerium oxide layer

    DOE Patents [OSTI]

    Wu, Xin D.; Muenchausen, Ross E.

    1993-01-01

    A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.

  20. Manganese containing layer for magnetic recording media

    DOE Patents [OSTI]

    Lambeth, David N.; Lee, Li-Lien; Laughlin, David E.

    1999-01-01

    The present invention provides for a magnetic recording media incorporating Mn-containing layers between a substrate and a magnetic layer to provide media having increased coercivity and lower noise. The Mn-containing layer can be incorporated in a rotating, translating or stationary recording media to operate in conjunction with magnetic transducing heads for recording and reading of magnetic data, as well as other applications. The magnetic recording medium of the invention preferably includes a Co or Co alloy film magnetic layer, and Mn-containing layer, preferably comprised of VMn, TiMn, MnZn, CrMnMo, CrMnW, CrMnV, and CrMnTi, and most preferably a CrMn alloy, disposed between the substrate and the magnetic layer to promote an epitaxial crystalline structure in the magnetic layer. The medium can further include seed layers, preferably polycrystalline MgO for longitudinal media, underlayers, and intermediate layers. Underlayers and intermediate layers are comprised of materials having either an A2 structure or a B2-ordered crystalline structure disposed between the seed layer and the magnetic layer. Materials having an A2 structure are preferably Cr or Cr alloys, such as CrV, CrMo, CrW and CrTi. Materials having a B2-ordered structure having a lattice constant that is substantially comparable to that of Cr, such as those preferably selected from the group consisting of NiAl, AILCo, FeAl, FeTi, CoFe, CoTi, CoHf, CoZr, NiTi, CuBe, CuZn, A-LMn, AlRe, AgMg, and Al.sub.2 FeMn.sub.2, and is most preferably FeAl or NiAl.

  1. Solar collector with blackened layer facing insulation

    SciTech Connect (OSTI)

    Brugger, R.

    1981-05-12

    A solar collector has a surface turned toward the sun and forms a heat exchange cell which has at least one wall composed of sheet aluminum. A tramsmitting layer of such a wall or the absorption layer thereof is a black layer of aluminum oxide containing Ag or Sn and formed unitarily on the aluminum sheet, e.g. By a chemical or electrochemical process.

  2. Size distributions of boundary-layer clouds

    SciTech Connect (OSTI)

    Stull, R.; Berg, L.; Modzelewski, H.

    1996-04-01

    Scattered fair-weather clouds are triggered by thermals rising from the surface layer. Not all surface layer air is buoyant enough to rise. Also, each thermal has different humidities and temperatures, resulting in interthermal variability of their lifting condensation levels (LCL). For each air parcel in the surface layer, it`s virtual potential temperature and it`s LCL height can be computed.

  3. Method to fabricate layered material compositions

    DOE Patents [OSTI]

    Fleming, James G.; Lin, Shawn-Yu

    2002-01-01

    A new class of processes suited to the fabrication of layered material compositions is disclosed. Layered material compositions are typically three-dimensional structures which can be decomposed into a stack of structured layers. The best known examples are the photonic lattices. The present invention combines the characteristic features of photolithography and chemical-mechanical polishing to permit the direct and facile fabrication of, e.g., photonic lattices having photonic bandgaps in the 0.1-20.mu. spectral range.

  4. Method to fabricate layered material compositions

    DOE Patents [OSTI]

    Fleming, James G.; Lin, Shawn-Yu

    2004-11-02

    A new class of processes suited to the fabrication of layered material compositions is disclosed. Layered material compositions are typically three-dimensional structures which can be decomposed into a stack of structured layers. The best known examples are the photonic lattices. The present invention combines the characteristic features of photolithography and chemical-mechanical polishing to permit the direct and facile fabrication of, e.g., photonic lattices having photonic bandgaps in the 0.1-20.mu. spectral range.

  5. Multi-layer seal for electrochemical devices

    DOE Patents [OSTI]

    Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

    2010-09-14

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  6. Multi-layer seal for electrochemical devices

    DOE Patents [OSTI]

    Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

    2010-11-16

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  7. Higgs boson gluon-fusion production beyond threshold in N3LO QCD

    SciTech Connect (OSTI)

    Anastasiou, Charalampos; Duhr, Claude; Dulat, Falko; Furlan, Elisabetta; Gehrmann, Thomas; Herzog, Franz; Mistlberger, Bernhard

    2015-03-18

    In this study, we compute the gluon fusion Higgs boson cross-section at N3LO through the second term in the threshold expansion. This calculation constitutes a major milestone towards the full N3LO cross section. Our result has the best formal accuracy in the threshold expansion currently available, and includes contributions from collinear regions besides subleading corrections from soft and hard regions, as well as certain logarithmically enhanced contributions for general kinematics. We use our results to perform a critical appraisal of the validity of the threshold approximation at N3LO in perturbative QCD.

  8. Enhanced Densification of SDC Barrier Layers

    SciTech Connect (OSTI)

    Hardy, John S.; Templeton, Jared W.; Lu, Zigui; Stevenson, Jeffry W.

    2011-09-12

    This technical report explores the Enhanced Densification of SCD Barrier Layers A samaria-doped ceria (SDC) barrier layer separates the lanthanum strontium cobalt ferrite (LSCF) cathode from the yttria-stabilized zirconia (YSZ) electrolyte in a solid oxide fuel cell (SOFC) to prevent the formation of electrically resistive interfacial SrZrO{sub 3} layers that arise from the reaction of Sr from the LSCF with Zr from the YSZ. However, the sintering temperature of this SDC layer must be limited to {approx}1200 C to avoid extensive interdiffusion between SDC and YSZ to form a resistive CeO{sub 2}-ZrO{sub 2} solid solution. Therefore, the conventional SDC layer is often porous and therefore not as impervious to Sr-diffusion as would be desired. In the pursuit of improved SOFC performance, efforts have been directed toward increasing the density of the SDC barrier layer without increasing the sintering temperature. The density of the SDC barrier layer can be greatly increased through small amounts of Cu-doping of the SDC powder together with increased solids loading and use of an appropriate binder system in the screen print ink. However, the resulting performance of cells with these barrier layers did not exhibit the expected increase in accordance with that achieved with the prototypical PLD SDC layer. It was determined by XRD that increased sinterability of the SDC also results in increased interdiffusivity between the SDC and YSZ, resulting in formation of a highly resistive solid solution.

  9. Sodium-layer laser guide stars

    SciTech Connect (OSTI)

    Friedman, H.W.

    1993-08-03

    The requirements and design of a laser system to generate a sodium- layer beacon is presented. Early results of photometry and wavefront sensing are given.

  10. Organic photovoltaic cells utilizing ultrathin sensitizing layer

    DOE Patents [OSTI]

    Forrest, Stephen R.; Yang, Fan; Rand, Barry P.

    2011-09-06

    A photosensitive device includes a plurality of organic photoconductive materials disposed in a stack between a first electrode and a second electrode, including a first continuous layer of donor host material, a second continuous layer of acceptor host material, and at least one other organic photoconductive material disposed as a plurality of discontinuous islands between the first continuous layer and the second continuous layer. Each of these other photoconductive materials has an absorption spectra different from the donor host material and the acceptor host material. Preferably, each of the discontinuous islands consists essentially of a crystallite of the respective organic photoconductive material, and more preferably, the crystallites are nanocrystals.

  11. Modeling the summertime Arctic cloudy boundary layer

    SciTech Connect (OSTI)

    Curry, J.A.; Pinto, J.O.; McInnes, K.L.

    1996-04-01

    Global climate models have particular difficulty in simulating the low-level clouds during the Arctic summer. Model problems are exacerbated in the polar regions by the complicated vertical structure of the Arctic boundary layer. The presence of multiple cloud layers, a humidity inversion above cloud top, and vertical fluxes in the cloud that are decoupled from the surface fluxes, identified in Curry et al. (1988), suggest that models containing sophisticated physical parameterizations would be required to accurately model this region. Accurate modeling of the vertical structure of multiple cloud layers in climate models is important for determination of the surface radiative fluxes. This study focuses on the problem of modeling the layered structure of the Arctic summertime boundary-layer clouds and in particular, the representation of the more complex boundary layer type consisting of a stable foggy surface layer surmounted by a cloud-topped mixed layer. A hierarchical modeling/diagnosis approach is used. A case study from the summertime Arctic Stratus Experiment is examined. A high-resolution, one-dimensional model of turbulence and radiation is tested against the observations and is then used in sensitivity studies to infer the optimal conditions for maintaining two separate layers in the Arctic summertime boundary layer. A three-dimensional mesoscale atmospheric model is then used to simulate the interaction of this cloud deck with the large-scale atmospheric dynamics. An assessment of the improvements needed to the parameterizations of the boundary layer, cloud microphysics, and radiation in the 3-D model is made.

  12. Searching for low-lying multi-particle thresholds in lattice spectroscopy

    SciTech Connect (OSTI)

    Mahbub, M. Selim; CSIRO Computational Informatics, College Road, Sandy Bay, TAS 7005 ; Kamleh, Waseem; Leinweber, Derek B.; Williams, Anthony G.

    2014-03-15

    We explore the Euclidean-time tails of odd-parity nucleon correlation functions in a search for the S-wave pion–nucleon scattering-state threshold contribution. The analysis is performed using 2+1 flavor 32{sup 3}×64 PACS-CS gauge configurations available via the ILDG. Correlation matrices composed with various levels of fermion source/sink smearing are used to project low-lying states. The consideration of 25,600 fermion propagators reveals the presence of more than one state in what would normally be regarded as an eigenstate-projected correlation function. This observation is in accord with the scenario where the eigenstates contain a strong mixing of single and multi-particle states but only the single particle component has a strong coupling to the interpolating field. Employing a two-exponential fit to the eigenvector-projected correlation function, we are able to confirm the presence of two eigenstates. The lower-lying eigenstate is consistent with a Nπ scattering threshold and has a relatively small coupling to the three-quark interpolating field. We discuss the impact of this small scattering-state contamination in the eigenvector projected correlation function on previous results presented in the literature. -- Highlights: • Correlation-matrix projected correlators reveal more than one state contributing. • Results are associated with strong mixing of single and multi-particle states in QCD. • A two-exponential fit confirms the presence of two QCD eigenstates. •The lower-lying eigenstate is consistent with a nucleon–pion scattering threshold. •The impact of this small contamination on the higher-lying state is examined.

  13. Wavelength dependence of femtosecond laser-induced damage threshold of optical materials

    SciTech Connect (OSTI)

    Gallais, L. Douti, D.-B.; Commandré, M.; Batavičiūtė, G.; Pupka, E.; Ščiuka, M.; Smalakys, L.; Sirutkaitis, V.; Melninkaitis, A.

    2015-06-14

    An experimental and numerical study of the laser-induced damage of the surface of optical material in the femtosecond regime is presented. The objective of this work is to investigate the different processes involved as a function of the ratio of photon to bandgap energies and compare the results to models based on nonlinear ionization processes. Experimentally, the laser-induced damage threshold of optical materials has been studied in a range of wavelengths from 1030 nm (1.2 eV) to 310 nm (4 eV) with pulse durations of 100 fs with the use of an optical parametric amplifier system. Semi-conductors and dielectrics materials, in bulk or thin film forms, in a range of bandgap from 1 to 10 eV have been tested in order to investigate the scaling of the femtosecond laser damage threshold with the bandgap and photon energy. A model based on the Keldysh photo-ionization theory and the description of impact ionization by a multiple-rate-equation system is used to explain the dependence of laser-breakdown with the photon energy. The calculated damage fluence threshold is found to be consistent with experimental results. From these results, the relative importance of the ionization processes can be derived depending on material properties and irradiation conditions. Moreover, the observed damage morphologies can be described within the framework of the model by taking into account the dynamics of energy deposition with one dimensional propagation simulations in the excited material and thermodynamical considerations.

  14. Identification of the stimulated-emission threshold in high-{beta} nanoscale lasers through phase-space reconstruction

    SciTech Connect (OSTI)

    Hachair, X.; Elvira, D.; Le Gratiet, L.; Lemaitre, A.; Abram, I.; Sagnes, I.; Robert-Philip, I.; Beveratos, A.; Braive, R.; Lippi, G. L.

    2011-05-15

    Nanoscale lasers sustain a few optical modes so that the fraction of spontaneous emission {beta} funnelled into the useful (lasing) mode is high (of the order of 10{sup -1}) and the threshold, which traditionally corresponds to an abrupt kink in the light-in-light-out curve, becomes ill defined. We propose an alternative definition of the threshold that is based on the dynamical response of the laser and is valid even for {beta}=1 lasers. The laser dynamics is analyzed through a reconstruction of its phase-space trajectory for pulsed excitations. Crossing the threshold, brings about a change in the shape of the trajectory and in the area contained in it. An unambiguous determination of the threshold in terms of this change is shown theoretically and illustrated experimentally in a photonic-crystal laser.

  15. Exploration of below threshold Z{sup {prime}} mass and coupling determinations at the NLC

    SciTech Connect (OSTI)

    Rizzo, T.G.

    1997-05-01

    We examine of the capability of the Next Linear Collider to determine the mass as well as the couplings to leptons and b quarks of a new neutral gauge boson Z{sup {prime}} below direct production threshold. By using simulated data collected at several different values of {radical}(s), we demonstrate how this can be done in a model-independent manner via an anonymous case approach. The importance of beam polarization to the success of this program is discussed. The procedure is shown to be easily extended to the case of top and charm quark couplings. {copyright} {ital 1997} {ital The American Physical Society}

  16. Spin-lasers: From threshold reduction to large-signal analysis

    SciTech Connect (OSTI)

    Lee, Jeongsu; Bearden, Sean; Wasner, Evan; Žutić, Igor

    2014-07-28

    Lasers in which spin-polarized carriers are injected provide paths to different practical room temperature spintronic devices, not limited to magnetoresistive effects. Unlike the conventional understanding of spintronic devices, an optimal performance of such spin-lasers can arise for finite, not infinite, spin relaxation time. By considering spin-relaxation times of both electrons and holes, we elucidate advantages of spin-lasers over their conventional (spin-unpolarized) counterparts. In addition to the steady-state threshold reduction, spin-lasers can improve transient operation leading to shorter turn-on delay times, reduced ringing of emitted light, and an enhanced bandwidth.

  17. Self-Sputtering Far above the Runaway Threshold: An Extraordinary Metal-Ion Generator

    SciTech Connect (OSTI)

    Andersson, Joakim; Anders, Andre

    2009-01-30

    When self-sputtering is driven far above the runaway threshold voltage, energetic electrons are made available to produce 'excess plasma' far from the magnetron target. Ionization balance considerations show that the secondary electrons deliver the necessary energy to the 'remote' zone. Thereby, such a system can be an extraordinarily prolific generator of usable metal ions. Contrary to other known sources, the ion current to a substrate can exceed the discharge current. For gasless self-sputtering of copper, the usable ion current scales exponentially with the discharge voltage.

  18. Self-sputtering far above the runaway threshold: an extraordinary metal ion generator

    SciTech Connect (OSTI)

    Andersson, Joakim; Anders, Andre

    2008-12-16

    When self-sputtering is driven far above the runaway threshold voltage, energetic electrons are made available to produce"excess plasma" far from the magnetron target. Ionization balance considerations show that the secondary electrons deliver the necessary energy to the"remote" zone. Thereby, such a system can be an extraordinarily prolific generator of useable metal ions. Contrary to other known sources, the ion current to a substrate can exceed the discharge current. For gasless self-sputtering of copper, the useable ion current scales exponentially with the discharge voltage.

  19. QCD CORRECTIONS TO DILEPTON PRODUCTION NEAR PARTONIC THRESHOLD IN PP SCATTERING.

    SciTech Connect (OSTI)

    SHIMIZU, H.; STERMAN, G.; VOGELSANG, W.; YOKOYA, H.

    2005-10-02

    We present a recent study of the QCD corrections to dilepton production near partonic threshold in transversely polarized {bar p}p scattering, We analyze the role of the higher-order perturbative QCD corrections in terms of the available fixed-order contributions as well as of all-order soft-gluon resummations for the kinematical regime of proposed experiments at GSI-FAIR. We find that perturbative corrections are large for both unpolarized and polarized cross sections, but that the spin asymmetries are stable. The role of the far infrared region of the momentum integral in the resummed exponent and the effect of the NNLL resummation are briefly discussed.

  20. Lower and upper estimates on the excitation threshold for breathers in discrete nonlinear Schroedinger lattices

    SciTech Connect (OSTI)

    Cuevas, J.; Palmero, F.

    2009-11-15

    We propose analytical lower and upper estimates on the excitation threshold for breathers (in the form of spatially localized and time periodic solutions) in discrete nonlinear Schroedinger (DNLS) lattices with power nonlinearity. The estimation, depending explicitly on the lattice parameters, is derived by a combination of a comparison argument on appropriate lower bounds depending on the frequency of each solution with a simple and justified heuristic argument. The numerical studies verify that the analytical estimates can be of particular usefulness, as a simple analytical detection of the activation energy for breathers in DNLS lattices.

  1. Crystalline perfection, birefringence and laser damage threshold properties of piperidinium p-hydroxybenzoate

    SciTech Connect (OSTI)

    Sudhahar, S.; Zahid, I. MD; Kumar, M. Krishna; Kumar, R. Mohan

    2015-06-24

    Piperidinium p-hydroxybenzoate (PPHB) crystal was grown by slow evaporation method. Single crystal X-ray diffraction studies confirm that PPHB crystallizes in monoclinic crystal system with noncentrosymmetric space group Cc. The crystalline perfection of the grown crystal was evaluated by using high resolution X-ray diffractometry. UV-Visible transmission and birefringence studies were employed on the grown PPHB crystal. The laser induced damage threshold value was estimated using Nd:YAG laser. Thermal behavior of PPHB crystal has been investigated by TG-DTA analyses. Etching studies have been performed to assess the growth pattern of PPHB crystal.

  2. Cyclone separator having boundary layer turbulence control

    DOE Patents [OSTI]

    Krishna, Coimbatore R.; Milau, Julius S.

    1985-01-01

    A cyclone separator including boundary layer turbulence control that is operable to prevent undue build-up of particulate material at selected critical areas on the separator walls, by selectively varying the fluid pressure at those areas to maintain the momentum of the vortex, thereby preventing particulate material from inducing turbulence in the boundary layer of the vortical fluid flow through the separator.

  3. Atomic Layer Deposition | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition New nanophase thin film materials with properties tailored to specifically meet the needs of industry New software simulates ALD over multiple length scale, saving industry time and money on developing specialized tools PDF icon Atomic_Layer_Deposition

  4. Epitaxial growth of silicon for layer transfer

    DOE Patents [OSTI]

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  5. Instability limits for spontaneous double layer formation

    SciTech Connect (OSTI)

    Carr, J. Jr.; Department of Physics, Texas Lutheran University, Seguin, Texas 78155 ; Galante, M. E.; McCarren, D.; Scime, E. E.; Sears, S.; VanDervort, R. W.; Magee, R. M.; TriAlpha Energy, Inc., Foothill Ranch, California 92610 ; Reynolds, E.

    2013-11-15

    We present time-resolved measurements that demonstrate that large amplitude electrostatic instabilities appear in pulsed, expanding helicon plasmas at the same time as particularly strong double layers appear in the expansion region. A significant cross-correlation between the electrostatic fluctuations and fluctuations in the number of ions accelerated by the double layer electric field is observed. No correlation is observed between the electrostatic fluctuations and ions that have not passed through the double layer. These measurements confirm that the simultaneous appearance of the electrostatic fluctuations and the double layer is not simple coincidence. In fact, the accelerated ion population is responsible for the growth of the instability. The double layer strength, and therefore, the velocity of the accelerated ions, is limited by the appearance of the electrostatic instability.

  6. Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition

    DOE Patents [OSTI]

    Cho, Jung Young; Ahn, Dongjoon; Salvador, James R.; Meisner, Gregory P.

    2016-06-07

    A thermoelectric material includes a substrate particle and a plurality of conformal oxide layers formed on the substrate particle. The plurality of conformal oxide layers has a total oxide layer thickness ranging from about 2 nm to about 20 nm. The thermoelectric material excludes oxide nanoparticles. A method of making the thermoelectric material is also disclosed herein.

  7. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOE Patents [OSTI]

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  8. Direct Measurement of the Bubble Nucleation Energy Threshold in a CF3I Bubble Chamber

    SciTech Connect (OSTI)

    Behnke, E.; Benjamin, T.; Brice, S. J.; Broemmelsiek, D.; Collar, J. I.; Cooper, P. S.; Crisler, M.; Dahl, C. E.; Fustin, D.; Hall, Jeter C.; Harnish, C.; Levine, I.; Lippincott, W. H.; Moan, T.; Nania, T.; Neilson, R.; Ramberg, E.; Robinson, A. E.; Ruschman, M.; Sonnenschein, Andrew; Vazquez-Jauregui, E.; RIvera, R. A.; Uplegger, L.

    2013-07-30

    Here, we measured the energy threshold and efficiency for bubble nucleation from iodine recoils in a CF3I bubble chamber in the energy range of interest for a dark matter search. These interactions cannot be probed by standard neutron calibration methods, so we develop a new technique by observing the elastic scattering of 12 GeV/c negative pions. The pions are tracked with a silicon pixel telescope and the reconstructed scattering angle provides a measure of the nuclear recoil kinetic energy. The bubble chamber was operated with a nominal threshold of (13.6±0.6) keV. Interpretation of the results depends on the response to fluorine and carbon recoils, but in general we find agreement with the predictions of the classical bubble-nucleation theory. Moreover, this measurement confirms the applicability of CF3I as a target for spin-independent dark matter interactions and represents a novel technique for calibration of superheated fluid detectors.

  9. ZnO-PVA nanocomposite films for low threshold optical limiting applications

    SciTech Connect (OSTI)

    Viswanath, Varsha; Beenakumari, C.; Muneera, C. I.

    2014-10-15

    Zinc oxide-PVA nanocomposite films were fabricated adopting a simple method based on solution-casting, incorporating small weight percentages (<1.2 wt%) of ZnO in PVA (∼0.625×10{sup −3}M to 7×10{sup −3}M), and their structure, morphology, linear and low threshold nonlinear optical properties were investigated. The films were characterized as nanostructured ZnO encapsulated between the molecules/chains of the semicrystalline host polymer PVA. The samples exhibited low threshold nonlinear absorption and negative nonlinear refraction, as studied using the Z-scan technique. A switchover from SA to RSA was observed as the concentration of ZnO was increased. The optical limiting of 632.8 nm CW laser light displayed by these nanocomposite films is also demonstrated. The estimated values of the effective coefficients of nonlinear absorption, nonlinear refraction and third-order nonlinear susceptibility, |χ{sup (3)}|, compared to those reported for continuous wave laser light excitation, measure up to the highest among them. The results show that the ZnO-PVA nanocomposite films have great potential applications in future optical and photonic devices.

  10. Reaction {pi}N {yields} {pi}{pi}N near threshold

    SciTech Connect (OSTI)

    Frlez, E.

    1993-11-01

    The LAMPF E1179 experiment used the {pi}{sup 0} spectrometer and an array of charged particle range counters to detect and record {pi}{sup +}{pi}{sup 0}, {pi}{sup 0}p, and {pi}{sup +}{pi}{sup 0}p coincidences following the reaction {pi}{sup +}p {yields} {pi}{sup 0}{pi}{sup +}p near threshold. The total cross sections for single pion production were measured at the incident pion kinetic energies 190, 200, 220, 240, and 260 MeV. Absolute normalizations were fixed by measuring {pi}{sup +}p elastic scattering at 260 MeV. A detailed analysis of the {pi}{sup 0} detection efficiency was performed using cosmic ray calibrations and pion single charge exchange measurements with a 30 MeV {pi}{sup {minus}} beam. All published data on {pi}N {yields} {pi}{pi}N, including our results, are simultaneously fitted to yield a common chiral symmetry breaking parameter {xi} ={minus}0.25{plus_minus}0.10. The threshold matrix element {vert_bar}{alpha}{sub 0}({pi}{sup 0}{pi}{sup +}p){vert_bar} determined by linear extrapolation yields the value of the s-wave isospin-2 {pi}{pi} scattering length {alpha}{sub 0}{sup 2}({pi}{pi}) = {minus}0.041{plus_minus}0.003 m{sub {pi}}{sup {minus}1}, within the framework of soft-pion theory.

  11. Blister Threshold Based Thermal Limits for the U-Mo Monolithic Fuel System

    SciTech Connect (OSTI)

    D. M. Wachs; I. Glagolenko; F. J. Rice; A. B. Robinson; B. H. Rabin; M. K. Meyer

    2012-10-01

    Fuel failure is most commonly induced in research and test reactor fuel elements by exposure to an under-cooled or over-power condition that results in the fuel temperature exceeding a critical threshold above which blisters form on the plate. These conditions can be triggered by normal operational transients (i.e. temperature overshoots that may occur during reactor startup or power shifts) or mild upset events (e.g., pump coastdown, small blockages, mis-loading of fuel elements into higher-than-planned power positions, etc.). The rise in temperature has a number of general impacts on the state of a fuel plate that include, for example, stress relaxation in the cladding (due to differential thermal expansion), softening of the cladding, increased mobility of fission gases, and increased fission-gas pressure in pores, all of which can encourage the formation of blisters on the fuel-plate surface. These blisters consist of raised regions on the surface of fuel plates that occur when the cladding plastically deforms in response to fission-gas pressure in large pores in the fuel meat and/or mechanical buckling of the cladding over damaged regions in the fuel meat. The blister temperature threshold decreases with irradiation because the mechanical properties of the fuel plate degrade while under irradiation (due to irradiation damage and fission-product accumulation) and because the fission-gas inventory progressively increases (and, thus, so does the gas pressure in pores).

  12. L to H mode transition: Parametric dependencies of the temperature threshold

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bourdelle, C.; Chone, L.; Fedorczak, N.; Garbet, Xavier; Beyer, P.; Citrin, J.; Fuhr, G.; Loarte, A.; Maggi, C. F.; Militello, F.; et al

    2015-06-15

    The L to H mode transition occurs at a critical power which depends on various parameters, such as the magnetic field, the density, etc. Experimental evidence on various tokamaks (JET, ASDEX-Upgrade, DIII-D, Alcator C-Mod) points towards the existence of a critical temperature characterizing the transition. This criterion for the L-H transition is local and is therefore easier to be compared to theoretical approaches. In order to shed light on the mechanisms of the transition, simple theoretical ideas are used to derive a temperature threshold (Tth). They are based on the stabilization of the underlying turbulence by a mean radial electricmore » field shear. The nature of the turbulence varies as the collisionality decreases, from resistive ballooning modes to ion temperature gradient and trapped electron modes. The obtained parametric dependencies of the derived Tth are tested versus magnetic field, density, effective charge. Furthermore, various robust experimental observations are reproduced, in particular Tth increases with magnetic field B and increases with density below the density roll-over observed on the power threshold.« less

  13. Precision Measurement of the Spin-dependent Asymmetry in the Threshold Region of Quasielastic 3He

    SciTech Connect (OSTI)

    Feng Xiong

    2002-09-01

    The first precision measurement of the spin-dependent asymmetry in the threshold region of polarized {sup 3}He(polarized e, e') was carried out in Hall A at the Jefferson Laboratory, using a longitudinally polarized continuous electron beam incident on a high-pressure polarized {sup 3}He gas target. The polarized electron beam was generated by illuminating a strained GaAs cathode with high intensity circularly polarized laser light, and an average beam polarization of about 70% was achieved. The {sup 3}He target was polarized based on the principle of spin-exchange optical pumpint and the average target polarization was about 30%. The scattered electrons were detected in the two Hall A high resolution spectrometers, HRSe and HRSh. The data from HRSh were used for this analysis and covered both the elastic peak and the threshold region. Two kinematic points were measured in the threshold region, one with a central Q{sup 2}-value of 0.1 (GeV/c){sup 2} at an incident beam energy E{sub 0} = 0.778 GeV and the other with a central Q{sup 2}-value of 0.2 (GeV/c){sup 2} at E-0 = 1.727 GeV. The average beam current was 10 mu-A, which was mainly due to the limitation of the polarized {sup 3}He target. The measured asymmetry was compared with both plane wave impulse approximation (PWIA) calculations and non-relativistic full Faddeev calculations which include both final-state interactions (FSIs) and meson-exchange currents (MECs) effects. The poor description of the data by PWIA calculations at both Q{sup 2}-values suggests the existence of strong FSI and MEC effects in the threshold region of polarized {sup 3}He (polarized e, e'). Indeed, the agreement between the data and full calculations is very good at Q{sup 2} = 0.1 (GeV/c){sup 2}. On the other hand, a small discrepancy at Q{sup 2} = 0.2 (GeV/c){sup 2} is observed, which might be due to some Q{sup 2} -dependent effects such as relativity and three-nucleon forces (3NFs), which are not included in the framework of non

  14. Method for forming a barrier layer

    DOE Patents [OSTI]

    Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palo Alto, CA)

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  15. Superconductive articles including cerium oxide layer

    DOE Patents [OSTI]

    Wu, X.D.; Muenchausen, R.E.

    1993-11-16

    A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure. 7 figures.

  16. Strained layer Fabry-Perot device

    DOE Patents [OSTI]

    Brennan, Thomas M.; Fritz, Ian J.; Hammons, Burrell E.

    1994-01-01

    An asymmetric Fabry-Perot reflectance modulator (AFPM) consists of an active region between top and bottom mirrors, the bottom mirror being affixed to a substrate by a buffer layer. The active region comprises a strained-layer region having a bandgap and thickness chosen for resonance at the Fabry-Perot frequency. The mirrors are lattice matched to the active region, and the buffer layer is lattice matched to the mirror at the interface. The device operates at wavelengths of commercially available semiconductor lasers.

  17. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    SciTech Connect (OSTI)

    Wu, Tian-Li Groeseneken, Guido; Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan; Bakeroot, Benoit; Roelofs, Robin

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  18. Cermet layer for amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J.

    1979-01-01

    A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.

  19. Cryogenic target system for hydrogen layering

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parham, T.; Kozioziemski, B.; Atkinson, D.; Baisden, P.; Bertolini, L.; Boehm, K; Chernov, A.; Coffee, K.; Coffield, F.; Dylla-Spears, R.; et al

    2015-11-24

    Here, a cryogenic target positioning system was designed and installed on the National Ignition Facility (NIF) target chamber. This instrument incorporates the ability to fill, form, and characterize the NIF targets with hydrogen isotopes needed for ignition experiments inside the NIF target bay then transport and position them in the target chamber. This effort brought to fruition years of research in growing and metrologizing high-quality hydrogen fuel layers and landed it in an especially demanding operations environment in the NIF facility. D-T (deuterium-tritium) layers for NIF ignition experiments have extremely tight specifications and must be grown in a very highlymore » constrained environment: a NIF ignition target inside a cryogenic target positioner inside the NIF target bay. Exquisite control of temperature, pressure, contaminant level, and thermal uniformity are necessary throughout seed formation and layer growth to create an essentially-groove-free single crystal layer.« less

  20. Counting molecular-beam grown graphene layers

    SciTech Connect (OSTI)

    Plaut, Annette S.; Wurstbauer, Ulrich; Pinczuk, Aron; Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 ; Garcia, Jorge M.; Pfeiffer, Loren N.

    2013-06-17

    We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

  1. Multi-layer waste containment barrier

    DOE Patents [OSTI]

    Smith, Ann Marie; Gardner, Bradley M.; Nickelson, David F.

    1999-01-01

    An apparatus for constructing an underground containment barrier for containing an in-situ portion of earth. The apparatus includes an excavating device for simultaneously (i) excavating earthen material from beside the in-situ portion of earth without removing the in-situ portion and thereby forming an open side trench defined by opposing earthen sidewalls, and (ii) excavating earthen material from beneath the in-situ portion of earth without removing the in-situ portion and thereby forming a generally horizontal underground trench beneath the in-situ portion defined by opposing earthen sidewalls. The apparatus further includes a barrier-forming device attached to the excavating device for simultaneously forming a side barrier within the open trench and a generally horizontal, multi-layer barrier within the generally horizontal trench. The multi-layer barrier includes at least a first layer and a second layer.

  2. Layered solid sorbents for carbon dioxide capture

    DOE Patents [OSTI]

    Li, Bingyun; Jiang, Bingbing; Gray, McMahan L; Fauth, Daniel J; Pennline, Henry W; Richards, George A

    2014-11-18

    A solid sorbent for the capture and the transport of carbon dioxide gas is provided having at least one first layer of a positively charged material that is polyethylenimine or poly(allylamine hydrochloride), that captures at least a portion of the gas, and at least one second layer of a negatively charged material that is polystyrenesulfonate or poly(acryclic acid), that transports the gas, wherein the second layer of material is in juxtaposition to, attached to, or crosslinked with the first layer for forming at least one bilayer, and a solid substrate support having a porous surface, wherein one or more of the bilayers is/are deposited on the surface of and/or within the solid substrate. A method of preparing and using the solid sorbent is provided.

  3. Molecular dynamics of wetting layer formation and forced water invasion in angular nanopores with mixed wettability

    SciTech Connect (OSTI)

    Sedghi, Mohammad Piri, Mohammad; Goual, Lamia

    2014-11-21

    The depletion of conventional hydrocarbon reservoirs has prompted the oil and gas industry to search for unconventional resources such as shale gas/oil reservoirs. In shale rocks, considerable amounts of hydrocarbon reside in nanoscale pore spaces. As a result, understanding the multiphase flow of wetting and non-wetting phases in nanopores is important to improve oil and gas recovery from these formations. This study was designed to investigate the threshold capillary pressure of oil and water displacements in a capillary dominated regime inside nanoscale pores using nonequilibrium molecular dynamics (NEMD) simulations. The pores have the same cross-sectional area and volume but different cross-sectional shapes. Oil and water particles were represented with a coarse grained model and the NEMD simulations were conducted by assigning external pressure on an impermeable piston. Threshold capillary pressures were determined for the drainage process (water replaced by oil) in different pores. The molecular dynamics results are in close agreements with calculations using the Mayer-Stowe-Princen (MS-P) method which has been developed on the premise of energy balance in thermodynamic equilibrium. After the drainage simulations, a change in wall particles’ wettability from water-wet to oil-wet was implemented based on the final configuration of oil and water inside the pore. Waterflooding simulations were then carried out at the threshold capillary pressure. The results show that the oil layer formed between water in the corner and in the center of the pore is not stable and collapses as the simulation continues. This is in line with the predictions from the MS-P method.

  4. Optical devices featuring nonpolar textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  5. Optical devices featuring textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  6. Optical devices featuring textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  7. Violations of Lorentz invariance in the neutrino sector: an improved analysis of anomalous threshold constraints

    SciTech Connect (OSTI)

    Maccione, Luca; Liberati, Stefano; Mattingly, David M. E-mail: liberati@sissa.it

    2013-03-01

    Recently there has been a renewed activity in the physics of violations of Lorentz invariance in the neutrino sector. Flavor dependent Lorentz violation, which generically changes the pattern of neutrino oscillations, is extremely tightly constrained by oscillation experiments. Flavor independent Lorentz violation, which does not introduce new oscillation phenomena, is much more weakly constrained with constraints coming from time of flight and anomalous threshold analyses. We use a simplified rotationally invariant model to investigate the effects of finite baselines and energy dependent dispersion on anomalous reaction rates in long baseline experiments and show numerically that anomalous reactions do not necessarily cut off the spectrum quite as sharply as currently assumed. We also present a revised analysis of how anomalous reactions can be used to cast constraints from the observed atmospheric high energy neutrinos and the expected cosmogenic ones.

  8. Φ-Meson Photoproduction with Linearly Polarized Photons at Threshold Energies

    SciTech Connect (OSTI)

    Salamanca, Julian; Cole, Philip L

    2007-10-01

    The observables provided by linearly-polarized photons are of interest in delineating the contributions of the various hadronic processes giving rise to vector meson photoproduction. In particular, we describe how Φ-meson production affords an incisive tool for exploring the nature of the parity exchange at threshold energies, the strangeness content of proton, as well as extracting signatures for the violation of Okubo-Zweig-Iizuka observation (OZI rule). Our goal is to study the γp → Φp reaction, with Φ → K+K-, in the photon energy range of 1.7 to 2.1 GeV by using the Coherent Linear Bremsstrahlung Facility in Hall B of Jefferson Laboratory, Newport News, VA. The data were collected during the g8b run in the summer of 2005.

  9. {phi}-Meson Photoproduction with Linearly Polarized Photons at Threshold Energies

    SciTech Connect (OSTI)

    Salamanca, Julian; Cole, Philip L.

    2007-10-26

    The observables provided by linearly-polarized photons are of interest in delineating the contributions of the various hadronic processes giving rise to vector meson photoproduction. In particular, we describe how {phi}-meson production affords an incisive tool for exploring the nature of the parity exchange at threshold energies, the strangeness content of proton, as well as extracting signatures for the violation of Okubo-Zweig-Iizuka observation (OZI rule). Our goal is to study the {gamma}-vectorp{yields}{phi}p reaction, with {phi}{yields}K{sup +}K{sup -}, in the photon energy range of 1.7 to 2.1 GeV by using the Coherent Linear Bremsstrahlung Facility in Hall B of Jefferson Laboratory, Newport News, VA. The data were collected during the g8b run in the summer of 2005.

  10. Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Meng, Chao; Yu, Shao-Liang; Wang, Hong -Qing; Cao, Yue; Tong, Li -Min; Liu, Wei -Tao; Shen, Yuen -Ron

    2015-11-06

    Graphene-doped polymer nanofibers are fabricated by taper drawing of solvated polyvinyl alcohol doped with liquid-phase exfoliated graphene flakes. Nanofibers drawn this way typically have diameters measured in hundreds of nanometers and lengths in tens of millimeters; they show excellent uniformity and surface smoothness for optical waveguiding. Owing to their tightly confined waveguiding behavior, light–matter interaction in these subwavelength-diameter nanofibers is significantly enhanced. Using approximately 1350-nm-wavelength femto-second pulses, we demonstrate saturable absorption behavior in these nanofibers with a saturation threshold down to 0.25 pJ pulse-1 (peak power ~1.3 W). Additionally, using 1064-nm-wavelength nanosecond pulses as switching light, we show all-optical modulationmore » of a 1550-nm-wavelength signal light guided along a single nanofiber with a switching peak power of ~3.2 W.« less

  11. Magnetic Field Control of the NO{sub 2} Photodissociation Threshold

    SciTech Connect (OSTI)

    Jost, R.; Nygard, J.; Pasinski, A.; Delon, A. [Grenoble High Magnetic Field Laboratory, MPI FKF/CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France)] [Grenoble High Magnetic Field Laboratory, MPI FKF/CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France)

    1997-04-01

    This is the first experimental observation of the control of the dissociation energy of a polyatomic molecule with an external magnetic field. We have observed by laser-induced fluorescence that the NO{sub 2} photodissociation threshold is linearly lowered by a magnetic field. This effect reaches 13.2cm{sup -1} under 14T, i.e., 2{mu}{sub B}B. This result demonstrates that all the rovibronic levels of NO{sub 2} energetically above the lowest dissociation channel are significantly coupled, without any barrier, to the lowest exit channel: NO({sup 2}{Pi}{sub 1/2},v=0,J=1/2) and O({sup 3}P{sub 2},M{sub J}=-2). This simple behavior is explained by the existence of quantum chaos within the NO{sub 2} rovibronic levels. {copyright} {ital 1997} {ital The American Physical Society}

  12. MOA-2010-BLG-311: A PLANETARY CANDIDATE BELOW THE THRESHOLD OF RELIABLE DETECTION

    SciTech Connect (OSTI)

    Yee, J. C.; Hung, L.-W.; Gould, A.; Gaudi, B. S.; Bond, I. A.; Allen, W.; Monard, L. A. G.; Albrow, M. D.; Fouque, P.; Dominik, M.; Tsapras, Y.; Udalski, A.; Zellem, R.; Christie, G. W.; DePoy, D. L.; Dong, Subo; Drummond, J.; Gorbikov, E.; Han, C. E-mail: rzellem@lpl.arizona.edu; Collaboration: muFUN Collaboration; MOA Collaboration; OGLE Collaboration; PLANET Collaboration; RoboNet Collaboration; MiNDSTEp Consortium; and others

    2013-05-20

    We analyze MOA-2010-BLG-311, a high magnification (A{sub max} > 600) microlensing event with complete data coverage over the peak, making it very sensitive to planetary signals. We fit this event with both a point lens and a two-body lens model and find that the two-body lens model is a better fit but with only {Delta}{chi}{sup 2} {approx} 80. The preferred mass ratio between the lens star and its companion is q = 10{sup -3.7{+-}0.1}, placing the candidate companion in the planetary regime. Despite the formal significance of the planet, we show that because of systematics in the data the evidence for a planetary companion to the lens is too tenuous to claim a secure detection. When combined with analyses of other high-magnification events, this event helps empirically define the threshold for reliable planet detection in high-magnification events, which remains an open question.

  13. Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding

    SciTech Connect (OSTI)

    Meng, Chao; Yu, Shao-Liang; Wang, Hong -Qing; Cao, Yue; Tong, Li -Min; Liu, Wei -Tao; Shen, Yuen -Ron

    2015-11-06

    Graphene-doped polymer nanofibers are fabricated by taper drawing of solvated polyvinyl alcohol doped with liquid-phase exfoliated graphene flakes. Nanofibers drawn this way typically have diameters measured in hundreds of nanometers and lengths in tens of millimeters; they show excellent uniformity and surface smoothness for optical waveguiding. Owing to their tightly confined waveguiding behavior, light–matter interaction in these subwavelength-diameter nanofibers is significantly enhanced. Using approximately 1350-nm-wavelength femto-second pulses, we demonstrate saturable absorption behavior in these nanofibers with a saturation threshold down to 0.25 pJ pulse-1 (peak power ~1.3 W). Additionally, using 1064-nm-wavelength nanosecond pulses as switching light, we show all-optical modulation of a 1550-nm-wavelength signal light guided along a single nanofiber with a switching peak power of ~3.2 W.

  14. Method of depositing epitaxial layers on a substrate

    SciTech Connect (OSTI)

    Goyal, Amit

    2003-12-30

    An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

  15. Ablation experiment and threshold calculation of titanium alloy irradiated by ultra-fast pulse laser

    SciTech Connect (OSTI)

    Zheng, Buxiang; Jiang, Gedong; Wang, Wenjun Wang, Kedian; Mei, Xuesong; State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710054

    2014-03-15

    The interaction between an ultra-fast pulse laser and a material's surface has become a research hotspot in recent years. Micromachining of titanium alloy with an ultra-fast pulse laser is a very important research direction, and it has very important theoretical significance and application value in investigating the ablation threshold of titanium alloy irradiated by ultra-fast pulse lasers. Irradiated by a picosecond pulse laser with wavelengths of 1064 nm and 532 nm, the surface morphology and feature sizes, including ablation crater width (i.e. diameter), ablation depth, ablation area, ablation volume, single pulse ablation rate, and so forth, of the titanium alloy were studied, and their ablation distributions were obtained. The experimental results show that titanium alloy irradiated by a picosecond pulse infrared laser with a 1064 nm wavelength has better ablation morphology than that of the green picosecond pulse laser with a 532 nm wavelength. The feature sizes are approximately linearly dependent on the laser pulse energy density at low energy density and the monotonic increase in laser pulse energy density. With the increase in energy density, the ablation feature sizes are increased. The rate of increase in the feature sizes slows down gradually once the energy density reaches a certain value, and gradually saturated trends occur at a relatively high energy density. Based on the linear relation between the laser pulse energy density and the crater area of the titanium alloy surface, and the Gaussian distribution of the laser intensity on the cross section, the ablation threshold of titanium alloy irradiated by an ultra-fast pulse laser was calculated to be about 0.109 J/cm{sup 2}.

  16. Observed Minimum Illuminance Threshold for Night Market Vendors in Kenya who use LED Lamps

    SciTech Connect (OSTI)

    Johnstone, Peter; Jacobson, Arne; Mills, Evan; Radecsky, Kristen

    2009-03-21

    Creation of light for work, socializing, and general illumination is a fundamental application of technology around the world. For those who lack access to electricity, an emerging and diverse range of LED based lighting products hold promise for replacing and/or augmenting their current fuel-based lighting sources that are costly and dirty. Along with analysis of environmental factors, economic models for total cost-ofownership of LED lighting products are an important tool for studying the impacts of these products as they emerge in markets of developing countries. One important metric in those models is the minimum illuminance demanded by end-users for a given task before recharging the lamp or replacing batteries. It impacts the lighting service cost per unit time if charging is done with purchased electricity, batteries, or charging services. The concept is illustrated in figure 1: LED lighting products are generally brightest immediately after the battery is charged or replaced and the illuminance degrades as the battery is discharged. When a minimum threshold level of illuminance is reached, the operational time for the battery charge cycle is over. The cost to recharge depends on the method utilized; these include charging at a shop at a fixed price per charge, charging on personal grid connections, using solar chargers, and purchasing dry cell batteries. This Research Note reports on the observed"charge-triggering" illuminance level threshold for night market vendors who use LED lighting products to provide general and task oriented illumination. All the study participants charged with AC power, either at a fixed-price charge shop or with electricity at their home.

  17. Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

    SciTech Connect (OSTI)

    Bolat, S. E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B.; Ozgit-Akgun, C.; Biyikli, N.; Okyay, A. K. E-mail: aokyay@ee.bilkent.edu.tr

    2014-06-16

    We report GaN thin film transistors (TFT) with a thermal budget below 250?C. GaN thin films are grown at 200?C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3?nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3?V/decade. The entire TFT device fabrication process temperature is below 250?C, which is the lowest process temperature reported for GaN based transistors, so far.

  18. Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

    SciTech Connect (OSTI)

    Hahn, Herwig Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

    2015-06-07

    In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10{sup 13 }cm{sup –2} allowing to considerably shift the threshold voltage to more positive values.

  19. Selective layer disordering in III-nitrides with a capping layer

    DOE Patents [OSTI]

    Wierer, Jr., Jonathan J.; Allerman, Andrew A.

    2016-06-14

    Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

  20. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

    SciTech Connect (OSTI)

    Wu, Wei Cao, Yanyan; Caspar, Jonathan V.; Guo, Qijie; Johnson, Lynda K.; Mclean, Robert S.; Malajovich, Irina; Choudhury, Kaushik Roy

    2014-07-28

    We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

  1. Organic light emitting device having multiple separate emissive layers

    DOE Patents [OSTI]

    Forrest, Stephen R. (Ann Arbor, MI)

    2012-03-27

    An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive layer with the adjacent emissive layers, exciton formation in each layer may be improved. Devices incorporating multiple emissive layers with multiple exciton formation regions may exhibit improved performance, including internal quantum efficiencies of up to 100%.

  2. Direct Measurements of an increased threshold for stimulated Brillouin scattering with polarization smoothing in ignition hohlraum plasmas

    SciTech Connect (OSTI)

    Froula, D; Divol, L; Berger, R L; London, R; Meezan, N; Neumayer, P; Ross, J S; Stagnito, S; Suter, L; Glenzer, S H; Strozzi, D

    2007-11-08

    We demonstrate a significant reduction of stimulated Brillouin scattering by polarization smoothing. The intensity threshold is measured to increase by a factor of 1.7 {+-} 0.2 when polarization smoothing is applied. The results were obtained in a high-temperature (T{sub 3} {approx_equal} 3 keV) hohlraum plasma where filamentation is negligible in determining the backscatter threshold. These results are explained by an analytical model relevant to ICF plasma conditions that modifies the linear gain exponent to account for polarization smoothing.

  3. Boundary Layer Cloudiness Parameterizations Using ARM Observations

    SciTech Connect (OSTI)

    Bruce Albrecht

    2004-09-15

    This study used DOE ARM data and facilities to: (1) study macroscopic properties of continental stratus clouds at SGP and the factors controlling these properties, (2) develop a scientific basis for understanding the processes responsible for the formation of boundary layer clouds using ARM observations in conjunction with simple parametric models and LES, and (3) evaluate cumulus cloud characteristics retrieved from the MMCR operating at TWP-Nauru. In addition we have used high resolution 94 GHz observations of boundary layer clouds and precipitation to: (1) develop techniques for using high temporal resolution Doppler velocities to study large-eddy circulations and turbulence in boundary layer clouds and estimate the limitations of using current and past MMCR data for boundary layer cloud studies, (2) evaluate the capability and limitations of the current MMCR data for estimating reflectivity, vertical velocities, and spectral under low- signal-to-noise conditions associated with weak no n-precipitating clouds, (3) develop possible sampling modes for the new MMCR processors to allow for adequate sampling of boundary layer clouds, and (4) retrieve updraft and downdraft structures under precipitating conditions.

  4. Membrane catalyst layer for fuel cells

    DOE Patents [OSTI]

    Wilson, Mahlon S.

    1993-01-01

    A gas reaction fuel cell incorporates a thin catalyst layer between a solid polymer electrolyte (SPE) membrane and a porous electrode backing. The catalyst layer is preferably less than about 10 .mu.m in thickness with a carbon supported platinum catalyst loading less than about 0.35 mgPt/cm.sup.2. The film is formed as an ink that is spread and cured on a film release blank. The cured film is then transferred to the SPE membrane and hot pressed into the surface to form a catalyst layer having a controlled thickness and catalyst distribution. Alternatively, the catalyst layer is formed by applying a Na.sup.+ form of a perfluorosulfonate ionomer directly to the membrane, drying the film at a high temperature, and then converting the film back to the protonated form of the ionomer. The layer has adequate gas permeability so that cell performance is not affected and has a density and particle distribution effective to optimize proton access to the catalyst and electronic continuity for electron flow from the half-cell reaction occurring at the catalyst.

  5. Inorganic dual-layer microporous supported membranes

    DOE Patents [OSTI]

    Brinker, C. Jeffrey; Tsai, Chung-Yi; Lu, Yungfeng

    2003-03-25

    The present invention provides for a dual-layer inorganic microporous membrane capable of molecular sieving, and methods for production of the membranes. The inorganic microporous supported membrane includes a porous substrate which supports a first inorganic porous membrane having an average pore size of less than about 25 .ANG. and a second inorganic porous membrane coating the first inorganic membrane having an average pore size of less than about 6 .ANG.. The dual-layered membrane is produced by contacting the porous substrate with a surfactant-template polymeric sol, resulting in a surfactant sol coated membrane support. The surfactant sol coated membrane support is dried, producing a surfactant-templated polymer-coated substrate which is calcined to produce an intermediate layer surfactant-templated membrane. The intermediate layer surfactant-templated membrane is then contacted with a second polymeric sol producing a polymeric sol coated substrate which is dried producing an inorganic polymeric coated substrate. The inorganic polymeric coated substrate is then calcined producing an inorganic dual-layered microporous supported membrane in accordance with the present invention.

  6. Solvothermal Thin Film Deposition of Electron Blocking Layers...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solvothermal Thin Film Deposition of Electron Blocking Layers Home > Research > ANSER Research Highlights > Solvothermal Thin Film Deposition of Electron Blocking Layers...

  7. Spatial atomic layer deposition on flexible substrates using...

    Office of Scientific and Technical Information (OSTI)

    Spatial atomic layer deposition on flexible substrates using a modular rotating cylinder reactor Citation Details In-Document Search Title: Spatial atomic layer deposition on...

  8. Analysis of thomsen parameters for finely layered VTI media ...

    Office of Scientific and Technical Information (OSTI)

    Conference: Analysis of thomsen parameters for finely layered VTI media Citation Details In-Document Search Title: Analysis of thomsen parameters for finely layered VTI media ...

  9. Controlled Covalent Modification of Epitaxial Single Layer Graphene...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Controlled Covalent Modification of Epitaxial Single Layer Graphene on ... Title: Controlled Covalent Modification of Epitaxial Single Layer Graphene on 6H-SiC ...

  10. ARM - Field Campaign - Lower Atmospheric Boundary Layer Experiment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Related Campaigns 2013 Lower Atmospheric Boundary Layer Experiment 2013.05.28, Turner, SGP ... Lead Scientist : David Turner For data sets, see below. Abstract Boundary layer turbulence ...

  11. Thermopower Enhancement by Fractional Layer Control in 2D Oxide...

    Office of Scientific and Technical Information (OSTI)

    Thermopower Enhancement by Fractional Layer Control in 2D Oxide Superlattices Citation Details In-Document Search Title: Thermopower Enhancement by Fractional Layer Control in 2D ...

  12. Application of Analytical Heat Transfer Models of Multi-layered...

    Office of Scientific and Technical Information (OSTI)

    multi-layered cylindrical solution to simulate the temperature response of a deep geologic radioactive waste repository with multi-layered natural and engineered...

  13. Thermal Multi-layer Coating Analysis | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thermal Multi-layer Coating Analysis Key to Argonne's thermal multi-layer analysis method is the numerical algorithm used for automated analysis of thermal imaging data for...

  14. Facile oxygen intercalation between full layer graphene and Ru...

    Office of Scientific and Technical Information (OSTI)

    Facile oxygen intercalation between full layer graphene and Ru(0001) under ambient ... Title: Facile oxygen intercalation between full layer graphene and Ru(0001) under ambient ...

  15. Graphene-silicon layered structures on single-crystalline Ir...

    Office of Scientific and Technical Information (OSTI)

    Accepted Manuscript: Graphene-silicon layered structures on single-crystalline Ir(111) thin films Prev Next Title: Graphene-silicon layered structures on single-crystalline...

  16. A dual mass flux framework for boundary layer convection

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A dual mass flux framework for boundary layer convection Neggers, Roel European Centre for Medium-range Weather Forecasts (ECMWF) Category: Modeling A new convective boundary layer...

  17. Buffer layer for thin film structures (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate ...

  18. Atomic Layer Deposition of Metal Sulfide Materials | Argonne...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition of Metal Sulfide Materials Title Atomic Layer Deposition of Metal Sulfide Materials Publication Type Journal Article Year of Publication 2015 Authors...

  19. L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

    SciTech Connect (OSTI)

    Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

    2014-04-21

    In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for IIIV MOSFETs at the 7?nm technology node and/or beyond.

  20. Impact of different cleaning processes on the laser damage threshold of antireflection coatings for Z-Backlighter optics at Sandia National Laboratories

    SciTech Connect (OSTI)

    Field, Ella; Bellum, John; Kletecka, Damon

    2014-11-06

    We have examined how different cleaning processes affect the laser-induced damage threshold of antireflection coatings for large dimension, Z-Backlighter laser optics at Sandia National Laboratories. Laser damage thresholds were measured after the coatings were created, and again 4 months later to determine which cleaning processes were most effective. There is a nearly twofold increase in laser-induced damage threshold between the antireflection coatings that were cleaned and those that were not cleaned. Aging of the coatings after 4 months resulted in even higher laser-induced damage thresholds. Also, the laser-induced damage threshold results revealed that every antireflection coating had a high defect density, despite the cleaning process used, which indicates that improvements to either the cleaning or deposition processes should provide even higher laser-induced damage thresholds.

  1. Impact of different cleaning processes on the laser damage threshold of antireflection coatings for Z-Backlighter optics at Sandia National Laboratories

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Field, Ella; Bellum, John; Kletecka, Damon

    2014-11-06

    We have examined how different cleaning processes affect the laser-induced damage threshold of antireflection coatings for large dimension, Z-Backlighter laser optics at Sandia National Laboratories. Laser damage thresholds were measured after the coatings were created, and again 4 months later to determine which cleaning processes were most effective. There is a nearly twofold increase in laser-induced damage threshold between the antireflection coatings that were cleaned and those that were not cleaned. Aging of the coatings after 4 months resulted in even higher laser-induced damage thresholds. Also, the laser-induced damage threshold results revealed that every antireflection coating had a high defectmore » density, despite the cleaning process used, which indicates that improvements to either the cleaning or deposition processes should provide even higher laser-induced damage thresholds.« less

  2. Development of CDMS-II Surface Event Rejection Techniques and Their Extensions to Lower Energy Thresholds

    SciTech Connect (OSTI)

    Hofer, Thomas James

    2014-12-01

    The CDMS-II phase of the Cryogenic Dark Matter Search, a dark matter direct-detection experiment, was operated at the Soudan Underground Laboratory from 2003 to 2008. The full payload consisted of 30 ZIP detectors, totaling approximately 1.1 kg of Si and 4.8 kg of Ge, operated at temperatures of 50 mK. The ZIP detectors read out both ionization and phonon pulses from scatters within the crystals; channel segmentation and analysis of pulse timing parameters allowed e ective ducialization of the crystal volumes and background rejection su cient to set world-leading limits at the times of their publications. A full re-analysis of the CDMS-II data was motivated by an improvement in the event reconstruction algorithms which improved the resolution of ionization energy and timing information. The Ge data were re-analyzed using three distinct background-rejection techniques; the Si data from runs 125 - 128 were analyzed for the rst time using the most successful of the techniques from the Ge re-analysis. The results of these analyses prompted a novel \\mid-threshold" analysis, wherein energy thresholds were lowered but background rejection using phonon timing information was still maintained. This technique proved to have signi cant discrimination power, maintaining adequate signal acceptance and minimizing background leakage. The primary background for CDMS-II analyses comes from surface events, whose poor ionization collection make them di cult to distinguish from true nuclear recoil events. The novel detector technology of SuperCDMS, the successor to CDMS-II, uses interleaved electrodes to achieve full ionization collection for events occurring at the top and bottom detector surfaces. This, along with dual-sided ionization and phonon instrumentation, allows for excellent ducialization and relegates the surface-event rejection techniques of CDMS-II to a secondary level of background discrimination. Current and future SuperCDMS results hold great promise for mid- to low

  3. Process for depositing Cr-bearing layer

    DOE Patents [OSTI]

    Ellis, T.W.; Lograsso, T.A.; Eshelman, M.A.

    1995-05-09

    A method of applying a Cr-bearing layer to a substrate, comprises introducing an organometallic compound, in vapor or solid powder form entrained in a carrier gas to a plasma of an inductively coupled plasma torch or device to thermally decompose the organometallic compound and contacting the plasma and the substrate to be coated so as to deposit the Cr-bearing layer on the substrate. A metallic Cr, Cr alloy or Cr compound such as chromium oxide, nitride and carbide can be provided on the substrate. Typically, the organometallic compound is introduced to an inductively coupled plasma torch that is disposed in ambient air so to thermally decompose the organometallic compound in the plasma. The plasma is directed at the substrate to deposit the Cr-bearing layer or coating on the substrate. 7 figs.

  4. Growth of oxide exchange bias layers

    DOE Patents [OSTI]

    Chaiken, A.; Michel, R.P.

    1998-07-21

    An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bias layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200 C, the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 {angstrom}/sec. The resulting NiO film was amorphous. 4 figs.

  5. Process for depositing Cr-bearing layer

    DOE Patents [OSTI]

    Ellis, Timothy W.; Lograsso, Thomas A.; Eshelman, Mark A.

    1995-05-09

    A method of applying a Cr-bearing layer to a substrate, comprises introducing an organometallic compound, in vapor or solid powder form entrained in a carrier gas to a plasma of an inductively coupled plasma torch or device to thermally decompose the organometallic compound and contacting the plasma and the substrate to be coated so as to deposit the Cr-bearing layer on the substrate. A metallic Cr, Cr alloy or Cr compound such as chromium oxide, nitride and carbide can be provided on the substrate. Typically, the organometallic compound is introduced to an inductively coupled plasma torch that is disposed in ambient air so to thermally decompose the organometallic compound in the plasma. The plasma is directed at the substrate to deposit the Cr-bearing layer or coating on the substrate.

  6. Growth of oxide exchange bias layers

    DOE Patents [OSTI]

    Chaiken, Alison; Michel, Richard P.

    1998-01-01

    An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

  7. Permafrost Active Layer Seismic Interferometry Experiment (PALSIE).

    SciTech Connect (OSTI)

    Abbott, Robert; Knox, Hunter Anne; James, Stephanie; Lee, Rebekah; Cole, Chris

    2016-01-01

    We present findings from a novel field experiment conducted at Poker Flat Research Range in Fairbanks, Alaska that was designed to monitor changes in active layer thickness in real time. Results are derived primarily from seismic data streaming from seven Nanometric Trillium Posthole seismometers directly buried in the upper section of the permafrost. The data were evaluated using two analysis methods: Horizontal to Vertical Spectral Ratio (HVSR) and ambient noise seismic interferometry. Results from the HVSR conclusively illustrated the method's effectiveness at determining the active layer's thickness with a single station. Investigations with the multi-station method (ambient noise seismic interferometry) are continuing at the University of Florida and have not yet conclusively determined active layer thickness changes. Further work continues with the Bureau of Land Management (BLM) to determine if the ground based measurements can constrain satellite imagery, which provide measurements on a much larger spatial scale.

  8. Excess Oxygen Defects in Layered Cuprates

    DOE R&D Accomplishments [OSTI]

    Lightfoot, P.; Pei, S. Y.; Jorgensen, J. D.; Manthiram, A.; Tang, X. X.; Goodenough, J. B.

    1990-09-01

    Neutron powder diffraction has been used to study the oxygen defect chemistry of two non-superconducting layered cuprates, La{sub 1. 25}Dy{sub 0.75}Cu{sub 3.75}F{sub 0.5}, having a T{sup {asterisk}}- related structure, and La{sub 1.85}Sr{sub 1.15}Cu{sub 2}O{sub 6.25}, having a structure related to that of the newly discovered double-layer superconductor La{sub 2-x}Sr{sub x}CaCu{sub 2}O{sub 6}. The role played by oxygen defects in determining the superconducting properties of layered cuprates is discussed.

  9. Buffer layers on metal alloy substrates for superconducting tapes

    DOE Patents [OSTI]

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  10. Photovoltaic cell with thin CS layer

    DOE Patents [OSTI]

    Jordan, John F.; Albright, Scot P.

    1994-01-18

    An improved photovoltaic panel and method of forming a photovoltaic panel are disclosed for producing a high efficiency CdS/CdTe photovoltaic cell. The photovoltaic panel of the present invention is initially formed with a substantially thick Cds layer, and the effective thickness of the CdS layer is substantially reduced during regrowth to both form larger diameter CdTe crystals and substantially reduce the effective thickness of the C This invention was made with Government support under Subcontract No. ZL-7-06031-3 awarded by the Department of Energy. The Government has certain rights in this invention.