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Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
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1

UNIVERSITY of CALIFORNIA ATOMIC LAYER DEPOSITION OF ALUMINUM OXIDE  

E-Print Network (OSTI)

UNIVERSITY of CALIFORNIA SANTA CRUZ ATOMIC LAYER DEPOSITION OF ALUMINUM OXIDE A thesis submitted deposition (ALD) of aluminum oxide on crystalline silicon and anodized aluminum substrates. A homemade ALD system is used with trimethylaluminum (TMA) and water as precursors to deposit uniform aluminum oxide

Belanger, David P.

2

Atomic layer deposition of W on nanoporous carbon aerogels  

Science Journals Connector (OSTI)

In this study the authors demonstrate the ability to apply precise conformal W coatings onto all surfaces of nanoporouscarbon aerogels using atomic layer deposition(ALD). The resulting material has a filamentous structure in which the W completely encapsulates the carbon aerogel strands. The material mass increases nonlinearly with W coating achieving a tenfold increase following ten ALD cycles. The aerogel surface area increases by nearly a factor of 2 after ten W ALD cycles. This conformal metalcoating of extremely high aspect ratio nanoporous materials by ALD represents a unique route to forming metal functionalized high surface area materials.

J. W. Elam; J. A. Libera; M. J. Pellin; A. V. Zinovev; J. P. Greene; J. A. Nolen

2006-01-01T23:59:59.000Z

3

Growth mode evolution of hafnium oxide by atomic layer deposition  

SciTech Connect

HfO{sub 2} thin films were deposited using tetrakis-ethylmethylamido hafnium and H{sub 2}O as precursors on silicon by atomic layer deposition (ALD). The morphology and microstructures at different ALD cycles were characterized by atomic force microscopy and high-resolution transmission electron microscopy. Based on the height–height correlation function and power spectral density function, quantitative analysis of surface morphologies was performed. Three characteristic dimensions (?{sub 1}, ?{sub 2}, and ?{sub 3}) corresponding to three surface structures, islands, local and global fluctuations, were identified. The evolution of ALD growth mode at range of the three critical scales was investigated, respectively. It suggests the transformation of growth mode from quasi two-dimensional layer-by-layer to three-dimensional island for global fluctuations.

Nie, Xianglong; Ma, Fei; Ma, Dayan, E-mail: madayan@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi (China); Xu, Kewei [State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China and Department of Physics and Opt-electronic Engineering, Xi'an University of Arts and Science, Xi'an 710065, Shaanxi (China)

2014-01-15T23:59:59.000Z

4

Exergy Analysis of Atomic Layer Deposition for Al2O3 Nano-film Preparation  

Science Journals Connector (OSTI)

In this paper exergy analysis is applied on Atomic Layer Deposition...2O3...thin film to analyze the utilization and losses of exergy in ALD system. The exergies associated with ... work flow are calculated. Base...

Fenfen Wang; Tao Li; Hong-Chao Zhang…

2013-01-01T23:59:59.000Z

5

Biocompatibility of atomic layer-deposited alumina thin films  

E-Print Network (OSTI)

. These results sug- gest that patterning a substrate with hydrophilic and hydro- phobic groups can control cell and excellent dielectric properties for bio- micro electro mechanical systems (Bio-MEMS) in sensors, actuators of atomic layer-deposited (ALD) alumina (Al2O3) and hydro- phobic coatings. While these coatings

George, Steven M.

6

Atomic layer deposited protective coatings for micro-electromechanical systems$  

E-Print Network (OSTI)

Atomic layer deposited protective coatings for micro-electromechanical systems$ Nils D. Hoivika of thin-®lm materials to protect MEMS devices from electrical breakdown, mechanical wear and stiction. Electrostatic testing of the coated MEMS cantilever beams revealed that the ALD Al2O3 ®lms prevented electrical

George, Steven M.

7

Atomic Layer Deposition of Uniform Metal Coatings on Highly Porous Aerogel Substrates  

Science Journals Connector (OSTI)

Atomic Layer Deposition of Uniform Metal Coatings on Highly Porous Aerogel Substrates ... Figure 1 Bright-field transmission electron micrographs of the (a) uncoated and (b) W-coated alumina aerogel (6 ALD cycles), and the (c) uncoated and (b) W-coated germania aerogel (6 ALD cycles). ... For the alumina aerogel, the coating consists of crystalline W nanoparticles, ?2 nm in diameter, uniformly deposited on the surfaces of the nanoleaflets (Figure 1b). ...

Theodore F. Baumann; Juergen Biener; Yinmin M. Wang; Sergei O. Kucheyev; Erik J. Nelson; Joe H. Satcher, Jr.; Jeffrey W. Elam; Michael J. Pellin; Alex V. Hamza

2006-11-18T23:59:59.000Z

8

Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness  

SciTech Connect

Previously, Lau (one of the authors) pointed out that the deposition of an amorphous thin film by atomic layer deposition (ALD) on a substrate with nano-sized roughness probably has a surface smoothing effect. In this letter, polycrystalline zinc oxide deposited by ALD onto a smooth substrate was used as a substrate with nano-sized roughness. Atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) were used to demonstrate that an amorphous aluminum oxide thin film deposited by ALD can reduce the surface roughness of a polycrystalline zinc oxide coated substrate.

Lau, W. S., E-mail: liuweicheng@zju.edu.cn; Wan, X.; Xu, Y.; Wong, H. [Zhejiang University, Department of Information Science and Electronic Engineering, No. 38 Zheda Road, Hangzhou 310027 (China)] [Zhejiang University, Department of Information Science and Electronic Engineering, No. 38 Zheda Road, Hangzhou 310027 (China); Zhang, J. [Zhejiang University, Department of Materials Science and Engineering, No. 38 Zheda Road, Hangzhou 310027 (China)] [Zhejiang University, Department of Materials Science and Engineering, No. 38 Zheda Road, Hangzhou 310027 (China); Luo, J. K. [Zhejiang University, Department of Information Science and Electronic Engineering, No. 38 Zheda Road, Hangzhou 310027 (China) [Zhejiang University, Department of Information Science and Electronic Engineering, No. 38 Zheda Road, Hangzhou 310027 (China); Institute of Renewable Energy and Environment Technology, Bolton University, Deane Road, Bolton BL3 5 AB (United Kingdom)

2014-02-15T23:59:59.000Z

9

Results from Point Contact Tunnelling Spectroscopy and Atomic Layer Deposition  

SciTech Connect

We have shown previously that magnetic niobium oxides can influence the superconducting density of states at the surface of cavity-grade niobium coupons. We will present recent results obtained by Point Contact Tunneling spectroscopy (PCT) on coupons removed from hot and cold spots in a niobium cavity, as well as a comparative study of magnetic oxides on mild baked/unbaked electropolished coupons. We will also describe recent results obtained from coated cavities, ALD films properties and new materials using Atomic Layer Deposition (ALD).

Proslier, Th. [Illinois Institute of Technology; Zasadzinski, J. [Illinois Institute of Technology; Ciovati, Gianluigi [JLAB; Kneisel, Peter K. [JLAB; Elam, J. W. [ANL; Norem, J. [ANL; Pellin, M. J. [ANL

2009-11-01T23:59:59.000Z

10

Fabrication of inverted opal ZnO photonic crystals by atomic layer deposition  

E-Print Network (OSTI)

Fabrication of inverted opal ZnO photonic crystals by atomic layer deposition M. Scharrer, X. Wu, A method to fabricate so-called "inverted opal" structures which have the long-range order, high filling into opal or inverted opal backbones.3,5,13,14 Recently, atomic layer deposition ALD has been pro- posed

Cao, Hui

11

Atmospheric pressure spatial atomic layer deposition web coating with in situ monitoring of film thickness  

SciTech Connect

Spectral reflectometry was implemented as a method for in situ thickness monitoring in a spatial atomic layer deposition (ALD) system. Al{sub 2}O{sub 3} films were grown on a moving polymer web substrate at 100?°C using an atmospheric pressure ALD web coating system, with film growth of 0.11–0.13?nm/cycle. The modular coating head design and the in situ monitoring allowed for the characterization and optimization of the trimethylaluminum and water precursor exposures, purge flows, and web speed. A thickness uniformity of ±2% was achieved across the web. ALD cycle times as low as 76?ms were demonstrated with a web speed of 1?m/s and a vertical gap height of 0.5?mm. This atmospheric pressure ALD system with in situ process control demonstrates the feasibility of low-cost, high throughput roll-to-roll ALD.

Yersak, Alexander S.; Lee, Yung C. [Department of Mechanical Engineering, University of Colorado at Boulder, 1045 Regent Drive, 422 UCB, Boulder, Colorado 80309-0422 (United States); Spencer, Joseph A.; Groner, Markus D., E-mail: mgroner@aldnanosolutions.com [ALD NanoSolutions, Inc., 580 Burbank Street, Unit 100, Broomfield, Colorado 80020 (United States)

2014-01-15T23:59:59.000Z

12

Nanostructure templating using low temperature atomic layer deposition  

DOE Patents (OSTI)

Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods comprise depositing by atomic layer deposition (ALD) structural layers that are stable at the desired elevated temperatures, onto a template employing a graded temperature deposition scheme. At least one structural layer is deposited at an initial temperature that is less than or equal to the stability temperature of the template, and subsequent depositions made at incrementally increased deposition temperatures until the desired elevated temperature stability is achieved. Nanostructure templates include three dimensional (3D) polymeric templates having features on the order of 100 nm fabricated by proximity field nanopatterning (PnP) methods.

Grubbs, Robert K. (Albuquerque, NM); Bogart, Gregory R. (Corrales, NM); Rogers, John A. (Champaign, IL)

2011-12-20T23:59:59.000Z

13

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR CELLS  

E-Print Network (OSTI)

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al of aluminum ox- ide (Al2O3) grown by atomic layer deposition (ALD) pro- vide an excellent level of sur

14

Property transformation of graphene with Al{sub 2}O{sub 3} films deposited directly by atomic layer deposition  

SciTech Connect

Al{sub 2}O{sub 3} films are deposited directly onto graphene by H{sub 2}O-based atomic layer deposition (ALD), and the films are pinhole-free and continuously cover the graphene surface. The growth process of Al{sub 2}O{sub 3} films does not introduce any detective defects in graphene, suppresses the hysteresis effect and tunes the graphene doping to n-type. The self-cleaning of ALD growth process, together with the physically absorbed H{sub 2}O and oxygen-deficient ALD environment consumes OH{sup ?} bonds, suppresses the p-doping of graphene, shifts Dirac point to negative gate bias and enhances the electron mobility.

Zheng, Li; Cao, Duo; Wang, Zhongjian; Xia, Chao [State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh-cheng@mail.sim.ac.cn; Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Shanghai 200050 (China); Shen, Dashen [University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States)

2014-01-13T23:59:59.000Z

15

Aligned Carbon Nanotube Array Functionalization for Enhanced Atomic Layer Deposition of Platinum Electrocatalysts  

SciTech Connect

Uniform metal deposition onto high surface area supports is a key challenge of developing successful efficient catalyst materials. Atomic layer deposition (ALD) circumvents permeation difficulties, but relies on gas-surface reactions to initiate growth. Our work demonstrates that modified surfaces within vertically aligned carbon nanotube (CNT) arrays, from plasma and molecular precursor treatments, can lead to improved catalyst deposition. Gas phase functionalization influences the number of ALD nucleation sites and the onset of ALD growth and, in turn, affects the uniformity of the coating along the length of the CNTs within the aligned arrays. The induced chemical changes for each functionalization route are identified by X-ray photoelectron and Raman spectroscopies. The most effective functionalization routes increase the prevalence of oxygen moieties at defect sites on the carbon surfaces. The striking effects of the functionalization are demonstrated with ALD Pt growth as a function of surface treatment and ALD cycles examined by electron microscopy of the arrays and the individual CNTs. Finally, we demonstrate applicability of these materials as fuel cell electrocatalysts and show that surface functionalization affects their performance towards oxygen reduction reaction.

Dameron, A. A.; Pylypenko, S.; Bult, J. B.; Neyerlin, K. C.; Engtrakul, C.; Bochert, C.; Leong, G. J.; Frisco, S. L.; Simpson, L.; Dinh, H. N.; Pivovar, B.

2012-04-15T23:59:59.000Z

16

Paper deacidification and UV protection using ZnO atomic layer deposition  

Science Journals Connector (OSTI)

Acid degradation of cellulosic paper in archival books periodicals and historic documents is a serious and widespread problem. Using acidic page samples from ?40 year old books we demonstrate that atomic layer deposition (ALD) ZnO can adjust and controllably neutralize the paper acid content. The paper samples were collected and analyzed in accordance with recognized Technical Association of the Pulp and Paper Industry (TAPPI) test standards. The average pH of the starting paper was 3.7?±?0.4 and 4.4?±?0.1 as determined using the TAPPI surface probe and cold water extraction methods respectively. After 50 ALD ZnO cycles the same tests on the coated paper produced an average pH of 7.39?±?0.08 and 7.3?±?0.4 respectively. Scanning electron microscopy confirmed that the cellulose structure remained intact during ALD. Additional tests of recently printed newspaper samples coated with ALD ZnO also show that ALD can effectively prevent paper discoloration and embrittlement caused by UV sunlight photoexposure. While there are many known methods for paper preservation including others using diethyl zinc the control afforded by ALD provides attractive advantages over other known approaches for preservation of archival paper and other natural fibrous materials.

C. A. Hanson; C. J. Oldham; G. N. Parsons

2012-01-01T23:59:59.000Z

17

Comparative Study of Zn(O,S) Buffer Layers and CIGS Solar Cells Fabricated by CBD, ALD, and Sputtering: Preprint  

SciTech Connect

Zn(O,S) thin films were deposited by chemical bath deposition (CBD), atomic layer deposition, and sputtering. Composition of the films and band gap were measured and found to follow the trends described in the literature. CBD Zn(O,S) parameters were optimized and resulted in an 18.5% efficiency cell that did not require post annealing, light soaking, or an undoped ZnO layer. Promising results were obtained with sputtering. A 13% efficiency cell was obtained for a Zn(O,S) emitter layer deposited with 0.5%O2. With further optimization of process parameters and an analysis of the loss mechanisms, it should be possible to increase the efficiency.

Ramanathan, K.; Mann, J.; Glynn, S.; Christensen, S.; Pankow, J.; Li, J.; Scharf, J.; Mansfield, L. M.; Contreras, M. A.; Noufi, R.

2012-06-01T23:59:59.000Z

18

Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment  

SciTech Connect

The role of surface hydroxyl content in atomic layer deposition (ALD) of aluminum oxide (AO) on polymers is demonstrated by performing an atomic layer deposition of AO onto a variety of polymer types, before and after pretreatment in a plasma struck in water vapor. The treatment and deposition reactions are performed in situ in a high vacuum chamber that is interfaced to an x-ray photoelectron spectrometer to prevent adventitious exposure to atmospheric contaminants. X-ray photoelectron spectroscopy is used to follow the surface chemistries of the polymers, including theformation of surface hydroxyls and subsequent growth of AO by ALD. Using dimethyl aluminum isopropoxide and water as reactants, ALD is obtained for water-plasma-treated poly(styrene) (PS), poly(propylene) (PP), poly(vinyl alcohol) (PVA), and poly(ethylene naphthalate) (PEN). For PS, PP, and PEN, initial growth rates of AO on the native (untreated) polymers are at least an order of magnitude lower than on the same polymer surface following the plasma treatment. By contrast, native PVA is shown to initiate ALD of AO as a result of the presence of intrinsic surface hydroxyls that are derived from the repeat unit of this polymer.

Steven Brandt, E.; Grace, Jeremy M. [Eastman Kodak Company, 1999 Lake Avenue, Rochester, New York 14650-2022 (United States)

2012-01-15T23:59:59.000Z

19

In situ study of HfO{sub 2} atomic layer deposition on InP(100)  

SciTech Connect

The interfacial chemistry of the native oxide and chemically treated InP samples during atomic layer deposition (ALD) HfO{sub 2} growth at 250 Degree-Sign C has been studied by in situ X-ray photoelectron spectroscopy. The In-oxide concentration is seen to gradually decrease on the native oxide and acid etched samples. No significant changes of the P-oxide concentrations are detected, while the P-oxides chemical states are seen to change gradually during the initial cycles of ALD on the native oxide and the chemically treated samples. (NH{sub 4}){sub 2}S treatment strongly decreases In-oxide and P-oxide concentrations prior to ALD and maintains low concentrations during the ALD process.

Dong, H.; Brennan, B.; Kim, J.; Hinkle, C. L.; Wallace, R. M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Zhernokletov, D. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-29T23:59:59.000Z

20

Metal deposition using seed layers  

DOE Patents (OSTI)

Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

2013-11-12T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of AlxSiyOz from Trimethylaluminium, Hexakis(ethylamino)disilane, and Water  

Science Journals Connector (OSTI)

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of AlxSiyOz from Trimethylaluminium, Hexakis(ethylamino)disilane, and Water ... The hexakis(ethylamino)disilane Si2(NHEt)6 precursor, also known as AHEAD, exhibits a high ALD growth rate (1 Å/cycle) with ozone as the oxygen source at temperatures ranging from 150 to 300 °C,(28) thus appearing as a serious candidate for ALD of silicon oxide. ...

Yoann Tomczak; Kjell Knapas; Suvi Haukka; Marianna Kemell; Mikko Heikkilä; Marcel Ceccato; Markku Leskelä; Mikko Ritala

2012-10-12T23:59:59.000Z

22

Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films  

Science Journals Connector (OSTI)

We adopted an ultrathin blocking layer of PEALD Al2O3 (10 cycles, 1 nm in thickness) for the leakage current suppression between BTO (5 nm) and Si substrate (Figure S2). ... For Al2O3 deposition, we used the plasma-enhanced ALD reactor (FlexAl) by Oxford Instruments. ...

Jihwan An; Takane Usui; Manca Logar; Joonsuk Park; Dickson Thian; Sam Kim; Kihyun Kim; Fritz B. Prinz

2014-06-19T23:59:59.000Z

23

Surface modification of nitrogen-doped carbon nanotubes by ozone via atomic layer deposition  

SciTech Connect

The use of ozone as an oxidizing agent for atomic layer deposition (ALD) processes is rapidly growing due to its strong oxidizing capabilities. However, the effect of ozone on nanostructured substrates such as nitrogen-doped multiwalled carbon nanotubes (NCNTs) and pristine multiwalled carbon nanotubes (PCNTs) are not very well understood and may provide an avenue toward functionalizing the carbon nanotube surface prior to deposition. The effects of ALD ozone treatment on NCNTs and PCNTs using 10?wt. % ozone at temperatures of 150, 250, and 300?°C are studied. The effect of ozone pulse time and ALD cycle number on NCNTs and PCNTs was also investigated. Morphological changes to the substrate were observed by scanning electron microscopy and high resolution transmission electron microscopy. Brunauer-Emmett-Teller measurements were also conducted to determine surface area, pore size, and pore size distribution following ozone treatment. The graphitic nature of both NCNTs and PCNTs was determined using Raman analysis while x-ray photoelectron spectroscopy (XPS) was employed to probe the chemical nature of NCNTs. It was found that O{sub 3} attack occurs preferentially to the outermost geometric surface of NCNTs. Our research also revealed that the deleterious effects of ozone are found only on NCNTs while little or no damage occurs on PCNTs. Furthermore, XPS analysis indicated that ALD ozone treatment on NCNTs, at elevated temperatures, results in loss of nitrogen content. Our studies demonstrate that ALD ozone treatment is an effective avenue toward creating low nitrogen content, defect rich substrates for use in electrochemical applications and ALD of various metal/metal oxides.

Lushington, Andrew; Liu, Jian; Tang, Yongji; Li, Ruying; Sun, Xueliang, E-mail: xsun@eng.uwo.ca [Department of Mechanical and Materials Engineering, University of Western Ontario, London, Ontario N6A 5B9 (Canada)

2014-01-15T23:59:59.000Z

24

E-Print Network 3.0 - atom layer scale Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

DistributedSpatially Distributed Experimentation toExperimentation to Summary: properties Significance Atomic layer deposition (ALD) is widely sought for its atomic-scale...

25

Molecular Layer Deposition on Carbon Nanotubes  

Science Journals Connector (OSTI)

They were fabricated by compressing a CNT aerogel produced as an output from a chemical vapor deposition furnace. ... The CNT3 specimens may be harder in general to coat due to their smaller diameter in comparison to the other materials. ... (1) Data tables for mechanical test results parallel and perpendicular to the CNT sheet orientation; (2) additional SEM and TEM images of coated CNT materials; (3) additional EDS spectra of MLD coatings on CNTs, and comparison to Al2O3 ALD coating on CNTs. ...

Joseph J. Brown; Robert A. Hall; Paul E. Kladitis; Steven M. George; Victor M. Bright

2013-08-13T23:59:59.000Z

26

Nucleation and growth of MgO atomic layer deposition: A real-time spectroscopic ellipsometry study  

SciTech Connect

The atomic layer deposition (ALD) of MgO thin films from bis(cyclopentadienyl) magnesium and H{sub 2}O was studied using in-situ real-time spectroscopic ellipsometry (SE), ex-situ x-ray photoelectron spectroscopy, and grazing-incidence x-ray diffraction. It is found that the initial growth is not linear during the first ten cycles, and magnesium silicate forms spontaneously on the SiO{sub 2}/Si substrates at 250 °C. Submonolayer sensitivity of SE is demonstrated by the analysis of each half-cycle and self-limiting adsorption, revealing characteristic features of hetero- and homo-MgO ALD processes.

Wang, Han; Fu, Kan [Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269. (United States)] [Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269. (United States)

2013-11-15T23:59:59.000Z

27

LDRD Project 52523 final report :Atomic layer deposition of highly conformal tribological coatings.  

SciTech Connect

Friction and wear are major concerns in the performance and reliability of micromechanical (MEMS) devices. While a variety of lubricant and wear resistant coatings are known which we might consider for application to MEMS devices, the severe geometric constraints of many micromechanical systems (high aspect ratios, shadowed surfaces) make most deposition methods for friction and wear-resistance coatings impossible. In this program we have produced and evaluate highly conformal, tribological coatings, deposited by atomic layer deposition (ALD), for use on surface micromachined (SMM) and LIGA structures. ALD is a chemical vapor deposition process using sequential exposure of reagents and self-limiting surface chemistry, saturating at a maximum of one monolayer per exposure cycle. The self-limiting chemistry results in conformal coating of high aspect ratio structures, with monolayer precision. ALD of a wide variety of materials is possible, but there have been no studies of structural, mechanical, and tribological properties of these films. We have developed processes for depositing thin (<100 nm) conformal coatings of selected hard and lubricious films (Al2O3, ZnO, WS2, W, and W/Al{sub 2}O{sub 3} nanolaminates), and measured their chemical, physical, mechanical and tribological properties. A significant challenge in this program was to develop instrumentation and quantitative test procedures, which did not exist, for friction, wear, film/substrate adhesion, elastic properties, stress, etc., of extremely thin films and nanolaminates. New scanning probe and nanoindentation techniques have been employed along with detailed mechanics-based models to evaluate these properties at small loads characteristic of microsystem operation. We emphasize deposition processes and fundamental properties of ALD materials, however we have also evaluated applications and film performance for model SMM and LIGA devices.

Jungk, John Michael (University of Minnesota); Dugger, Michael Thomas; George, Steve M. (University of Colorado); Prasad, Somuri V.; Grubbs, Robert K.; Moody, Neville Reid; Mayer, Thomas Michael; Scharf, Thomas W.; Goeke, Ronald S.; Gerberich, William W. (University of Minnesota)

2005-10-01T23:59:59.000Z

28

In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system  

E-Print Network (OSTI)

In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods ...

Cheng, Cheng-Wei, Ph.D. Massachusetts Institute of Technology

2010-01-01T23:59:59.000Z

29

In situ study of the role of substrate temperature during atomic layer deposition of HfO{sub 2} on InP  

SciTech Connect

The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO{sub 2} on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO{sub 2} at different temperatures. An (NH{sub 4}){sub 2} S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200 °C, 250 °C and 300 °C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states.

Dong, H.; Santosh, K.C.; Qin, X.; Brennan, B.; McDonnell, S.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Zhernokletov, D. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Hinkle, C. L.; Cho, K.; Wallace, R. M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-10-21T23:59:59.000Z

30

Inorganic Hollow Nanotube Aerogels by Atomic Layer Deposition onto Native Nanocellulose Templates  

Science Journals Connector (OSTI)

First we show a preparation method for titanium dioxide, zinc oxide, and aluminum oxide nanotube aerogels based on atomic layer deposition (ALD) on biological nanofibrillar aerogel templates, that is, nanofibrillated cellulose (NFC), also called microfibrillated cellulose (MFC) or nanocellulose. ... Inorganic layer thickness data (S1), larger SEM micrographs of single nanocellulose fibrils (S2), several samples demonstrating differences in preparation methods (S3, S4) and different coatings (S5?S7), XRD data for a TiO2 nanotube film (S8). ... Fabrication of Transparent-Conducting-Oxide-Coated Inverse Opals as Mesostructured Architectures for Electrocatalysis Applications: A Case Study with NiO ...

Juuso T. Korhonen; Panu Hiekkataipale; Jari Malm; Maarit Karppinen; Olli Ikkala; Robin H. A. Ras

2011-03-01T23:59:59.000Z

31

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition  

SciTech Connect

A tunneling spectroscopy study is presented of superconducting MoN and Nb{sub 0.8}Ti{sub 0.2}N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2?meV and 2.4?meV, respectively, with a corresponding critical temperature of 11.5?K and 13.4?K, among the highest reported T{sub c} values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below ?10%) were obtained using an artificial tunnel barrier of Al{sub 2}O{sub 3} on the film's surface grown ex situ by ALD. We find a large critical current density on the order of 4?×?10{sup 6}?A/cm{sup 2} at T?=?0.8T{sub c} for a 60?nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest that the ALD technique offers significant promise for thin film superconducting device applications.

Groll, Nickolas R., E-mail: ngroll@anl.gov; Klug, Jeffrey A.; Claus, Helmut; Pellin, Michael J.; Proslier, Thomas, E-mail: proslier@anl.gov [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Cao, Chaoyue; Becker, Nicholas G.; Zasadzinski, John F. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Physics, Illinois Institute of Technology, Chicago, Illinois 60616 (United States); Altin, Serdar [Fen Edebiyat Fakultesi, Fizik Bolumu, Inonu Universitesi, 44280 Malatya (Turkey)

2014-03-03T23:59:59.000Z

32

Surface Reactivity of Copper Precursors for Atomic Layer Deposition (ALD) on Metal Surfaces  

E-Print Network (OSTI)

under ultrahigh vacuum (UHV) conditions by using ainside an ultrahigh vacuum (UHV) chamber equipped with X-rayand under ultrahigh vacuum (UHV) condition, hence atomically

MA, QIANG

2010-01-01T23:59:59.000Z

33

Waterless TiO{sub 2} atomic layer deposition using titanium tetrachloride and titanium tetraisopropoxide  

SciTech Connect

The surface chemistry for TiO{sub 2} atomic layer deposition (ALD) typically utilizes water or other oxidants that can oxidize underlying substrates such as magnetic disks or semiconductors. To avoid this oxidation, waterless or oxidant-free surface chemistry can be used that involves titanium halides and titanium alkoxides. In this study, waterless TiO{sub 2} ALD was accomplished using titanium tetrachloride (TiCl{sub 4}) and titanium tetraisopropoxide (TTIP). In situ transmission Fourier transform infrared (FTIR) studies were employed to study the surface species and the reactions during waterless TiO{sub 2} ALD. At low temperatures between 125 and 225??°C, the FTIR absorbance spectra revealed that the isopropoxide species remained on the surface after TTIP exposures. The TiCl{sub 4} exposures then removed the isopropoxide species and deposited additional titanium species. At high temperatures between 250 and 300??°C, the isopropoxide species were converted to hydroxyl species by ?-hydride elimination. The observation of propene gaseous reaction product by quadrupole mass spectrometry (QMS) confirmed the ?-hydride elimination reaction pathway. The TiCl{sub 4} exposures then easily reacted with the hydroxyl species. QMS studies also observed the 2-chloropropane and HCl gaseous reaction products and monitored the self-limiting nature of the TTIP reaction. Additional studies examined the waterless TiO{sub 2} ALD growth at low and high temperature. Quartz crystal microbalance measurements observed growth rates of ?3?ng/cm{sup 2} at a low temperature of 150??°C. Much higher growth rates of ?15?ng/cm{sup 2} were measured at a higher temperature of 250??°C under similar reaction conditions. X-ray reflectivity analysis measured a growth rate of 0.55 ± 0.05?Å/cycle at 250??°C. X-ray photoelectron depth-profile studies showed that the TiO{sub 2} films contained low Cl concentrations <1 at. %. This waterless TiO{sub 2} ALD process using TiCl{sub 4} and TTIP should be valuable to prevent substrate oxidation during TiO{sub 2} ALD on oxygen-sensitive substrates.

Anderson, Virginia R.; Cavanagh, Andrew S.; Abdulagatov, Aziz I. [Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215 (United States); Gibbs, Zachary M. [Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309-0424 (United States); George, Steven M., E-mail: Steven.George@Colorado.Edu [Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215 and Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309-0427. (United States)

2014-01-15T23:59:59.000Z

34

Surface modification of Au/TiO2 catalysts by SiO2 via atomic layer deposition  

SciTech Connect

Atomic layer deposition (ALD) was utilized for the surface engineering of metallic nanoparticles to tame their sintering problems and catalytic activities. We chose the surface modification of gold nanocatalysts as an example to demonstrate the concept of this ALD-based approach. Herein, an active Au/TiO{sub 2} catalyst was modified by amorphous SiO{sub 2} via ALD, and the samples were characterized by inductively coupled plasma-optical emission spectrometry (ICP-OES), scanning (SEM-EDX) and transmission electron microscope-energy-dispersive X-ray spectrometry (TEM-EDX), X-ray diffraction (XRD), and thermogravimetry/differential thermogravimetry (TG/DTG), and the catalytic activities in CO oxidation and H{sub 2} oxidation were tested with respect to the pretreatment temperature and SiO{sub 2} content. A significant sintering resistance and changes in catalytic activities were observed. The difference between the SiO{sub 2}/Au/TiO{sub 2} samples prepared by gas-phase ALD and solution-phase chemical grafting was discussed.

Ma, Zhen [ORNL; Brown, Suree [ORNL; Howe, Jane Y [ORNL; Overbury, Steven {Steve} H [ORNL; Dai, Sheng [ORNL

2008-01-01T23:59:59.000Z

35

Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone  

SciTech Connect

In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1?±?0.01?nm/cycle within the wide ALD temperature window of 175–300?°C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure, refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}–Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3?? cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.

Kannan Selvaraj, Sathees [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Feinerman, Alan [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Takoudis, Christos G., E-mail: takoudis@uic.edu [Departments of Bioengineering and Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

2014-01-15T23:59:59.000Z

36

Synthesis of Pt?Pd Core?Shell Nanostructures by Atomic Layer Deposition: Application in Propane Oxidative Dehydrogenation to Propylene  

SciTech Connect

Atomic layer deposition (ALD) was employed to synthesize supported Pt?Pd bimetallic particles in the 1 to 2 nm range. The metal loading and composition of the supported Pt?Pd nanoparticles were controlled by varying the deposition temperature and by applying ALD metal oxide coatings to modify the support surface chemistry. Highresolution scanning transmission electron microscopy images showed monodispersed Pt?Pd nanoparticles on ALD Al2O3 - and TiO2 -modi?ed SiO2 gel. X-ray absorption spectroscopy revealed that the bimetallic nanoparticles have a stable Pt-core, Pd-shell nanostructure. Density functional theory calculations revealed that the most stable surface con?guration for the Pt? Pd alloys in an H2 environment has a Pt-core, Pd-shell nanostructure. In comparison to their monometallic counterparts, the small Pt?Pd bimetallic core?shell nanoparticles exhibited higher activity in propane oxidative dehydrogenation as compared to their physical mixture.

Lei, Y.; Liu, Bin; Lu, Junling; Lobo-Lapidus, Rodrigo J.; Wu, Tianpin; Feng, Hao; Xia, Xiaoxing; Mane, Anil U.; Libera, Joseph A.; Greeley, Jeffrey P.; Miller, Jeffrey T.; Elam, J. W.

2012-08-20T23:59:59.000Z

37

In Situ Synchrotron Based X-ray Fluorescence and Scattering Measurements During Atomic Layer Deposition: Initial Growth of HfO2 on Si and Ge Substrates  

SciTech Connect

The initial growth of HfO{sub 2} was studied by means of synchrotron based in situ x-ray fluorescence (XRF) and grazing incidence small angle x-ray scattering (GISAXS). HfO{sub 2} was deposited by atomic layer deposition (ALD) using tetrakis(ethylmethylamino)hafnium and H{sub 2}O on both oxidized and H-terminated Si and Ge surfaces. XRF quantifies the amount of deposited material during each ALD cycle and shows an inhibition period on H-terminated substrates. No inhibition period is observed on oxidized substrates. The evolution of film roughness was monitored using GISAXS. A correlation is found between the inhibition period and the onset of surface roughness.

K Devloo-Casier; J Dendooven; K Ludwig; G Lekens; J DHaen; C Detavernier

2011-12-31T23:59:59.000Z

38

Genesis and evolution of surface species during Pt atomic layer deposition on oxide supports characterized by in-situ XAFS analysis and water-gas shift reaction.  

SciTech Connect

Platinum atomic layer deposition (ALD) using MeCpPtMe{sub 3} was employed to prepare high loadings of uniform-sized, 1-2 nm Pt nanoparticles on high surface area Al{sub 2}O{sub 3}, TiO{sub 2}, and SrTiO{sub 3} supports. X-ray absorption fine structure was utilized to monitor the changes in the Pt species during each step of the synthesis. The temperature, precursor exposure time, treatment gas, and number of ALD cycles were found to affect the Pt particle size and density. Lower-temperature MeCpPtMe{sub 3} adsorption yielded smaller particles due to reduced thermal decomposition. A 300 C air treatment of the adsorbed MeCpPtMe{sub 3} leads to PtO. In subsequent ALD cycles, the MeCpPtMe{sub 3} reduces the PtO to metallic Pt in the ratio of one precursor molecule per PtO. A 200 C H{sub 2} treatment of the adsorbed MeCpPtMe{sub 3} leads to the formation of 1-2 nm, metallic Pt nanoparticles. During subsequent ALD cycles, MeCpPtMe{sub 3} adsorbs on the support, which, upon reduction, yields additional Pt nanoparticles with a minimal increase in size of the previously formed nanoparticles. The catalysts produced by ALD had identical water-gas shift reaction rates and reaction kinetics to those of Pt catalysts prepared by standard solution methods. ALD synthesis of catalytic nanoparticles is an attractive method for preparing novel model and practical catalysts.

Setthapun, W.; Williams, W.; Kim, S.; Feng, H.; Elam, J.; Rabuffetti, F.; Poeppelmeier, K.; Stair, P.; Stach, E.; Ribeiro, F.; Miller, J.; Marshall, C.; Northwestern Univ.; Purdue Univ.

2010-06-03T23:59:59.000Z

39

Atomic layer deposition of Al{sub 2}O{sub 3} on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment  

SciTech Connect

GeSn is quickly emerging as a potential candidate for high performance Si-compatible transistor technology. Fabrication of high-? gate stacks on GeSn with good interface properties is essential for realizing high performance field effect transistors based on this material system. We demonstrate an effective surface passivation scheme for n-Ge{sub 0.97}Sn{sub 0.03} alloy using atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. The effect of pre-ALD wet chemical surface treatment is analyzed and shown to be critical in obtaining a good quality interface between GeSn and Al{sub 2}O{sub 3}. Using proper surface pre-treatment, mid-gap trap density for the Al{sub 2}O{sub 3}/GeSn interface of the order of 10{sup 12}?cm{sup ?2} has been achieved.

Gupta, Suyog, E-mail: suyog@stanford.edu; Chen, Robert; Harris, James S.; Saraswat, Krishna C. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)] [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2013-12-09T23:59:59.000Z

40

Hydrogen Production via Chemical Looping Redox Cycles Using Atomic Layer Deposition-Synthesized Iron Oxide and Cobalt Ferrites  

Science Journals Connector (OSTI)

Hydrogen Production via Chemical Looping Redox Cycles Using Atomic Layer Deposition-Synthesized Iron Oxide and Cobalt Ferrites ... Unlike solution and line-of-sight methods used to synthesize metal-substituted ferrites, including solution combustion synthesis,(6) aerial oxidation of aqueous suspensions,(5) sol?gel process,(8) laser molecular beam epitaxy,(21) sputtering,(22) and chemical vapor deposition (CVD),(23) ALD can produce conformal thin films on porous materials. ... The drop in peak H2 production rate is accompanied by a ?55% decrease in the total amount of H2 produced (see Table 1) and a similar decrease in the time required to achieve 95% conversion, suggesting a loss of accessible iron in this material. ...

Jonathan R. Scheffe; Mark D. Allendorf; Eric N. Coker; Benjamin W. Jacobs; Anthony H. McDaniel; Alan W. Weimer

2011-03-24T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Exploring the effect of Al2O3 ALD coating on a high gradient ILC single-cell cavity  

SciTech Connect

Encouraged by work at Argonne National Lab, we investigated atomic layer deposition technique (ALD) for high gradient superconducting RF cavities at JLab with an ALD coating system of Old Dominion University located on the JLab site. The goal of this study was to look into the possibility of coating a dielectric layer on top of RF niobium surface at a lower temperature of 120 C as compared to ANL coatings at 200 C to preserve niobium pentoxide on niobium surface. The initial coatings showed complete, but non-uniform coatings of the surface with several areas exhibiting discoloration, which was probably due to the temperature variation across the cavity surface. The initial coating showed a high RF losses, which were improved after discolored areas on the beam tubes were removed with HF rinse of the beam tubes only. The best result was 2 109 low field Q0 and Eacc = 18 MV/m limited by available power.

Grigory Eremeev, Anne-Marie Valente, Andy Wu, Diefeng Gu

2012-07-01T23:59:59.000Z

42

Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices  

SciTech Connect

As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metal–oxide–semiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ?4.6?eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

Lee, Albert, E-mail: alee@intermolecular.com; Fuchigami, Nobi; Pisharoty, Divya; Hong, Zhendong; Haywood, Ed; Joshi, Amol; Mujumdar, Salil; Bodke, Ashish; Karlsson, Olov [Intermolecular, 3011 North First Street, San Jose, California 95134 (United States); Kim, Hoon; Choi, Kisik [GLOBALFOUNDRIES Technology Research Group, 257 Fuller Road, Albany, New York 12309 (United States); Besser, Paul [GLOBALFOUNDRIES, 1050 East Arques, Sunnyvale, California 94085 (United States)

2014-01-15T23:59:59.000Z

43

USE OF ATOMIC LAYER DEPOSITION OF FUNCTIONALIZATION OF NANOPOROUS BIOMATERIALS  

SciTech Connect

Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials.

Brigmon, R.; Narayan, R.; Adiga, S.; Pellin, M.; Curtiss, L.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N.; Elam, J.

2010-02-08T23:59:59.000Z

44

Effective passivation of In{sub 0.2}Ga{sub 0.8}As by HfO{sub 2} surpassing Al{sub 2}O{sub 3} via in-situ atomic layer deposition  

SciTech Connect

High {kappa} gate dielectrics of HfO{sub 2} and Al{sub 2}O{sub 3} were deposited on molecular beam epitaxy-grown In{sub 0.2}Ga{sub 0.8}As pristine surface using in-situ atomic-layer-deposition (ALD) without any surface treatment or passivation layer. The ALD-HfO{sub 2}/p-In{sub 0.2}Ga{sub 0.8}As interface showed notable reduction in the interfacial density of states (D{sub it}), deduced from quasi-static capacitance-voltage and conductance-voltage (G-V) at room temperature and 100 Degree-Sign C. More significantly, the midgap peak commonly observed in the D{sub it}(E) of ALD-oxides/In{sub 0.2}Ga{sub 0.8}As is now greatly diminished. The midgap D{sub it} value decreases from {>=}15 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-Al{sub 2}O{sub 3} to {approx}2-4 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-HfO{sub 2}. Further, thermal stability at 850 Degree-Sign C was achieved in the HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As, whereas C-V characteristics of Al{sub 2}O{sub 3}/p-In{sub 0.2}Ga{sub 0.8}As degraded after the high temperature annealing. From in-situ x-ray photoelectron spectra, the AsO{sub x}, which is not the oxidized state from the native oxide, but is an induced state from adsorption of trimethylaluminum and H{sub 2}O, was found at the ALD-Al{sub 2}O{sub 3}/In{sub 0.2}Ga{sub 0.8}As interface, while that was not detected at the ALD-HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As interface.

Chang, Y. H.; Chiang, T. H. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, C. A.; Liu, Y. T.; Lin, H. Y.; Huang, M. L.; Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M. [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

2012-10-22T23:59:59.000Z

45

High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor  

SciTech Connect

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

Ono, S., E-mail: shimpei@criepi.denken.or.jp [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Häusermann, R. [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan) [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland); Chiba, D. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan) [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 322-0012 (Japan); Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan); Shimamura, K.; Ono, T. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)] [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Batlogg, B. [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)] [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)

2014-01-06T23:59:59.000Z

46

Development of Highly Selective Oxidation Catalysts by Atomic Layer Deposition  

Energy.gov (U.S. Department of Energy (DOE))

This factsheet describes a research project whose goal is to use Atomic Layer Deposition to construct nanostructured catalysts to improve the effectiveness of oxidative dehydrogenation of alkanes. More effective catalysts could enable higher specific conversion rates and result in drastic energy savings - up to 25 trillion Btu per year by 2020.

47

Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings  

SciTech Connect

Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

Long, Rong, E-mail: rlongmech@gmail.com [Department of Mechanical Engineering, University of Alberta, Edmonton, Alberta T6G 2G8 (Canada); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Dunn, Martin L. [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Singapore University of Technology and Design, Singapore 138682 (Singapore)

2014-06-21T23:59:59.000Z

48

Deposition of thin silicon layers on transferred large area graphene  

SciTech Connect

Physical vapor deposition of Si onto transferred graphene is investigated. At elevated temperatures, Si nucleates preferably on wrinkles and multilayer graphene islands. In some cases, however, Si can be quasi-selectively grown only on the monolayer graphene regions while the multilayer islands remain uncovered. Experimental insights and ab initio calculations show that variations in the removal efficiency of carbon residuals after the transfer process can be responsible for this behavior. Low-temperature Si seed layer results in improved wetting and enables homogeneous growth. This is an important step towards realization of electronic devices in which graphene is embedded between two Si layers.

Lupina, Grzegorz, E-mail: lupina@ihp-microelectronics.com; Kitzmann, Julia; Lukosius, Mindaugas; Dabrowski, Jarek; Wolff, Andre; Mehr, Wolfgang [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)] [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

2013-12-23T23:59:59.000Z

49

Vehicle Technologies Office Merit Review 2014: Atomic Layer Deposition for Stabilization of Silicon Anodes  

Energy.gov (U.S. Department of Energy (DOE))

Presentation given by NREL at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about atomic layer deposition for...

50

CO-CATALYTIC ABSORPTION LAYERS FOR CONTROLLED LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF CARBON NANOTUBES  

E-Print Network (OSTI)

The concept of co-catalytic layer structures for controlled laser-induced chemical vapor deposition of carbon nanotubes is established, in which a thin Ta support layer chemically aids the initial Fe catalyst reduction. This enables a significant...

Michaelis, F.B.; Weatherup, R.S.; Bayer, B.C.; Bock, M.C.D; Sugime, H.; Caneva, S.; Robertson, J.; Baumberg, J.J.; Hofmann, S.

2014-02-24T23:59:59.000Z

51

Shape-selective catalysts for Fischer-Tropsch chemistry : atomic layer deposition of active catalytic metals. Activity report : January 1, 2005 - September 30, 2005.  

SciTech Connect

Argonne National Laboratory is carrying out a research program to create, prepare, and evaluate catalysts to promote Fischer-Tropsch (FT) chemistry - specifically, the reaction of hydrogen with carbon monoxide to form long-chain hydrocarbons. In addition to needing high activity, it is desirable that the catalysts have high selectivity and stability with respect to both mechanical strength and aging properties. The broad goal is to produce diesel fraction components and avoiding excess yields of both light hydrocarbons and heavy waxes. Originally the goal was to prepare shape-selective catalysts that would limit the formation of long-chain products and yet retain the active metal sites in a protected 'cage.' Such catalysts were prepared with silica-containing fractal cages. The activity was essentially the same as that of catalysts without the cages. We are currently awaiting follow-up experiments to determine the attrition strength of these catalysts. A second experimental stage was undertaken to prepare and evaluate active FT catalysts formed by atomic-layer deposition [ALD] of active components on supported membranes and particulate supports. The concept was that of depositing active metals (i.e. ruthenium, iron or cobalt) upon membranes with well defined flow channels of small diameter and length such that the catalytic activity and product molecular weight distribution could be controlled. In order to rapidly evaluate the catalytic membranes, the ALD coating processes were performed in an 'exploratory mode' in which ALD procedures from the literature appropriate for coating flat surfaces were applied to the high surface area membranes. Consequently, the Fe and Ru loadings in the membranes were likely to be smaller than those expected for complete monolayer coverage. In addition, there was likely to be significant variation in the Fe and Ru loading among the membranes due to difficulties in nucleating these materials on the aluminum oxide surfaces. The first series of experiments using coated membranes demonstrated that the technology needed further improvement. Specifically, observed catalytic FT activity was low. This low activity appeared to be due to: (1) low available surface area, (2) atomic deposition techniques that needed improvements, and (3) insufficient preconditioning of the catalyst surface prior to FT testing. Therefore, experimentation was expanded to the use of particulate silica supports having defined channels and reasonably high surface area. This later experimentation will be discussed in the next progress report. Subsequently, we plan to evaluate membranes after the ALD techniques are improved with a careful study to control and quantify the Fe and Ru loadings. The preconditioning of these surfaces will also be further developed. (A number of improvements have been made with particulate supports; they will be discussed in the subsequent report.) In support of the above, there was an opportunity to undertake a short study of cobalt/promoter/support interaction using the Advanced Photon Source (APS) of Argonne. Five catalysts and a reference cobalt oxide were characterized during a temperature programmed EXAFS/XANES experimental study with the combined effort of Argonne and the Center for Applied Energy Research (CAER) of the University of Kentucky. This project was completed, and it resulted in an extensive understanding of the preconditioning step of reducing Co-containing FT catalysts. A copy of the resulting manuscript has been submitted and accepted for publication. A similar project was undertaken with iron-containing FT catalysts; the data is currently being studied.

Cronauer, D. C. (Chemical Sciences and Engineering Division)

2011-04-15T23:59:59.000Z

52

Stephenson Appointed ALD for Photon Sciences  

NLE Websites -- All DOE Office Websites (Extended Search)

APS, Other DOE Labs Help Develop New Cancer Fighting Drug APS, Other DOE Labs Help Develop New Cancer Fighting Drug Paper on Fast Pharmaceuticals by APS Authors Featured in New Journal Art Scene Investigation: Picasso goes Nanotech Linda Young of APS Elected Vice Chair of DAMOP Moffat of BioCARS and U. of C. Receives 2011 ACA Patterson Award APS News Archives: 2012 | 2011 | 2010 | 2009 2008 | 2007 | 2006 | 2005 2004 | 2003 | 2002 | 2001 2000 Subscribe to APS News rss feed Stephenson Appointed ALD for Photon Sciences SEPTEMBER 7, 2011 Bookmark and Share Brian Stephenson Argonne National Laboratory Director Eric D. Isaacs announced today that Brian Stephenson has been appointed Associate Laboratory Director (ALD) for Photon Sciences, effective September 1, 2011. The directorate comprises three research and support divisions centered on Argonne's

53

Homogeneous, dual layer, solid state, thin film deposition for structural and/or electrochemical characteristics  

DOE Patents (OSTI)

Solid state, thin film, electrochemical devices (10) and methods of making the same are disclosed. An exemplary device 10 includes at least one electrode (14) and an electrolyte (16) deposited on the electrode (14). The electrolyte (16) includes at least two homogenous layers of discrete physical properties. The two homogenous layers comprise a first dense layer (15) and a second porous layer (16).

Pitts, J. Roland; Lee, Se-Hee; Tracy, C. Edwin; Li, Wenming

2014-04-08T23:59:59.000Z

54

Al{sub 2}O{sub 3} multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition  

SciTech Connect

Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition have been used for thin film encapsulation of organic light emitting diode. In this study, a multi-density layer structure consisting of two Al{sub 2}O{sub 3} layers with different densities are deposited with different deposition conditions of O{sub 2} plasma reactant time. This structure improves moisture permeation barrier characteristics, as confirmed by a water vapor transmission rate (WVTR) test. The lowest WVTR of the multi-density layer structure was 4.7 × 10{sup ?5} gm{sup ?2} day{sup ?1}, which is one order of magnitude less than WVTR for the reference single-density Al{sub 2}O{sub 3} layer. This improvement is attributed to the location mismatch of paths for atmospheric gases, such as O{sub 2} and H{sub 2}O, in the film due to different densities in the layers. This mechanism is analyzed by high resolution transmission electron microscopy, elastic recoil detection, and angle resolved X-ray photoelectron spectroscopy. These results confirmed that the multi-density layer structure exhibits very good characteristics as an encapsulation layer via location mismatch of paths for H{sub 2}O and O{sub 2} between the two layers.

Jung, Hyunsoo [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741 (Korea, Republic of); Jeon, Heeyoung [Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Choi, Hagyoung; Ham, Giyul; Shin, Seokyoon [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2014-02-21T23:59:59.000Z

55

Thermodynamic properties and interfacial layer characteristics of HfO{sub 2} thin films deposited by plasma-enhanced atomic layer deposition  

SciTech Connect

The thermodynamic properties and interfacial characteristics of HfO{sub 2} thin films that were deposited by the direct plasma atomic layer deposition (DPALD) method are investigated. The as-deposited HfO{sub 2} films that were deposited by the DPALD method show crystallization of the HfO{sub 2} layers, which initiates at approximately the 35th cycle (about 2.8 nm) of the DPALD process. Medium-energy ion scattering analysis reveals that the direct O{sub 2} plasma causes a compositional change in the interfacial layer as the process progresses. With an increase in the number of process cycles, the Si content decreases and the O content increases at that position, so that the HfO{sub 2}-like Hf-silicate layer is formed on top of the interfacial layer. The enhanced physical reactivity of the oxygen ions in the direct plasma and the Hf-silicate layer may be the driving forces that accelerate the early crystallization of the HfO{sub 2} layer in the DPALD process in the as-deposited state.

Kim, Inhoe; Kuk, Seoungwoo; Kim, Seokhoon; Kim, Jinwoo; Jeon, Hyeongtag; Cho, M.-H.; Chung, K.-B. [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Korea Research Institute of Standard and Science, Daejeon 305-600 (Korea, Republic of)

2007-05-28T23:59:59.000Z

56

Application of Atomic Layer Deposition of Platinum to Solid Oxide Fuel Cells  

Science Journals Connector (OSTI)

Application of Atomic Layer Deposition of Platinum to Solid Oxide Fuel Cells ... (4, 5, 8-10) Therefore, the electrode material requires particular attention in the development and optimization of low-temperature SOFCs. ... Enormous Plasmonic Enhancement and Suppressed Quenching of Luminescence from Nanoscale ZnO Films by Uniformly Dispersed Atomic-Layer-Deposited Platinum with Optimized Spacer Thickness ...

Xirong Jiang; Hong Huang; Friedrich B. Prinz; Stacey F. Bent

2008-05-23T23:59:59.000Z

57

Heteroepitaxy of group IV-VI nitrides by atomic layer deposition  

SciTech Connect

Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (?-Al{sub 2}O{sub 3}) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.

Klug, Jeffrey A., E-mail: jklug@anl.gov; Groll, Nickolas R.; Pellin, Michael J.; Proslier, Thomas, E-mail: prolier@anl.gov [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)] [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Becker, Nicholas G.; Cao, Chaoyue; Zasadzinski, John F. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States) [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Physics, Illinois Institute of Technology, Chicago, Illinois 60616 (United States); Weimer, Matthew S. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States) [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Chemistry, Illinois Institute of Technology, Chicago, Illinois 60616 (United States)

2013-11-18T23:59:59.000Z

58

Method of depositing multi-layer carbon-based coatings for field emission  

DOE Patents (OSTI)

A novel field emitter device for cold cathode field emission applications, comprising a multi-layer resistive carbon film. The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials.

Sullivan, John P. (Albuquerque, NM); Friedmann, Thomas A. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

59

Method of depositing multi-layer carbon-based coatings for field emission  

DOE Patents (OSTI)

A novel field emitter device is disclosed for cold cathode field emission applications, comprising a multi-layer resistive carbon film. The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials. 8 figs.

Sullivan, J.P.; Friedmann, T.A.

1999-08-10T23:59:59.000Z

60

RANDOM DEPOSITION MODEL OF CDS LAYER IN CDS/CDTE THINFILM SOLAR CELLS  

E-Print Network (OSTI)

THESIS RANDOM DEPOSITION MODEL OF CDS LAYER IN CDS/CDTE THIN­FILM SOLAR CELLS Submitted by Lei Chen LAYER IN CDS/CDTE THIN­FILM SOLAR CELLS BE AC- CEPTED AS FULFILLING IN PART REQUIREMENTS FOR THE DEGREE MODEL OF CDS LAYER IN CDS/CDTE THIN­FILM SOLAR CELLS Thin­film solar cells are developing dramatically

Sites, James R.

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum  

E-Print Network (OSTI)

IPA is chosen as the oxygen source for the ALD in the MOCVD. Second, IPA will not react precursor pulse time. b Dependence of ALD Al2O3 growth rate on temperature. The pulse time for TMA and IPA

62

Atomic layer deposition-based functionalization of materials for medical and environmental health applications  

Science Journals Connector (OSTI)

...implantable sensor membranes and water purification membranes. Atomic layer deposition...of nanoporous membranes for water purification. As mentioned earlier, many...have potential applications in water purification. Human epithelial keratinocyte...

2010-01-01T23:59:59.000Z

63

Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel  

E-Print Network (OSTI)

An ambient pressure chemical vapor deposition (APCVD) process is used to fabricate graphene based films consisting of one to several graphene layers across their area. Polycrystalline Ni thin films are used and the graphene ...

Reina Ceeco, Alfonso

2010-01-01T23:59:59.000Z

64

Stephenson is Interim ALD for Photon Sciences  

NLE Websites -- All DOE Office Websites (Extended Search)

Students at Argonne on the FaST Track to New Skills Students at Argonne on the FaST Track to New Skills How Did the Caterpillar Cross the Road? R&D 100 Awards for New X-ray Technologies In Nature: Fischetti on Minibeams Sidorowicz of AES Earns UChicago Argonne, LLC Board of Governors Outstanding Service Award for 2010 APS News Archives: 2012 | 2011 | 2010 | 2009 2008 | 2007 | 2006 | 2005 2004 | 2003 | 2002 | 2001 2000 Subscribe to APS News rss feed Stephenson is Interim ALD for Photon Sciences OCTOBER 1, 2010 Bookmark and Share G. Brian Stephenson Argonne Director Eric Isaacs has appointed G. Brian Stephenson as the Interim Associate Laboratory Director for Photon Sciences, effective Oct. 1, 2010. The text of Director Isaacs' announcement is below. Sept. 30, 2010 To: All employees From: Eric Isaacs, Argonne Director

65

Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers  

SciTech Connect

Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7?eV to a value of 0.28?eV for a thin Al{sub 2}O{sub 3} interfacial layer (?2.8?nm). For diodes with an Al{sub 2}O{sub 3} interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8?nm. For diodes with a HfO{sub 2} interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5?nm.

Gajula, D. R., E-mail: dgajula01@qub.ac.uk; Baine, P.; Armstrong, B. M.; McNeill, D. W. [School of Electronics, Electrical Engineering and Computer Science, Queen's University Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH (United Kingdom)] [School of Electronics, Electrical Engineering and Computer Science, Queen's University Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH (United Kingdom); Modreanu, M.; Hurley, P. K. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland)] [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland)

2014-01-06T23:59:59.000Z

66

Quartz crystal microbalance study of tungsten atomic layer deposition using WF6 and Si2H6  

E-Print Network (OSTI)

(disilane). In this paper, W ALD is explored using in situ quartz crystal microbalance (QCM) measurements for disilane exposures > 4Ã?104 L. The W ALD growth rate was also weakly temperature

George, Steven M.

67

VHF plasma deposition of {mu}c-Si p-layer materials  

SciTech Connect

Microcrystalline silicon ({micro}c-Si) p-layers have been widely used in amorphous silicon (a-Si) solar cell research and manufacturing to achieve record high solar cell efficiency. In order to further improve the solar cell performance and achieve wider parameter windows for the process conditions, the authors studied the deposition of high quality {micro}c-Si p-layer material using a very high frequency (VHF) plasma enhanced CVD process. A design of experiment (DOE) approach was used for the exploration and optimization of deposition parameters. The usage of DOE leads to a quick optimization of the deposition process within a short time frame. In addition, by using a modified VHF deposition process, they have improved the solar cell blue response which leads to a 6--10% improvement in the solar cell efficiency. Such an improvement is likely due to an improved microcrystalline formation in the p-layer.

Deng, X.; Jones, S.J.; Liu, T.; Izu, M.; Ovshinsky, S.R.; Hoffman, K.

1997-07-01T23:59:59.000Z

68

Cite this: RSC Advances, 2013, 3, Cathodic ALD V2O5 thin films for high-rate  

E-Print Network (OSTI)

passivation layers and more recently active storage material. Here we report a detailed study of ALD V2O5 as a high capacity cathode material, using vanadium tri-isopropoxide (VTOP) precursor with both O3 and H2O in electrochemical energy storage by Li-ion batteries, materials which actively store the ionic charge must

Ghodssi, Reza

69

Detecting sub-glacial aquifers in the north polar layered deposits with Mars Express/MARSIS  

E-Print Network (OSTI)

water ice cap and underlying dusty-ice polar layered deposits or PLD) via melting from ice insulation into the polar ice mass is modeled to determine the capability of the instrument to locate sub-glacial aquifers will investigate the effect of ice reflective and conductive losses on the radar-detection of subsurface aquifers

Gurnett, Donald A.

70

Selective mining of multiple-layer lignite deposits. A fuzzy approach  

Science Journals Connector (OSTI)

In this paper the development and the application of a fuzzy expert system for the evaluation of the exploitable reserves of multiple-layer lignite deposits, mined by continuous surface methods, is presented. The exploitable reserves are determined decisively ... Keywords: Expert, Exploitable, Fuzzy, Lignite, Mining, Reserves, System

Michael Galetakis; Anthoula Vasiliou

2010-06-01T23:59:59.000Z

71

Selective mining of multiple-layer lignite deposits. A fuzzy approach  

Science Journals Connector (OSTI)

In this paper the development and the application of a fuzzy expert system for the evaluation of the exploitable reserves of multiple-layer lignite deposits, mined by continuous surface methods, is presented. The exploitable reserves are determined decisively by the structure of these deposits, as well as by the limitations of the used mining systems. In practice, thin layers of lignite and interbedded waste layers are grouped under specified assumptions regarding thickness and ash content, to form the exploitable blocks. Moreover, the decision for excavating such a block is made under subjective constraints of different importance, or by using uncertain data. Advances in fuzzy inference systems (FIS) have provided a new approach to the evaluation of multiple-layer lignite deposits. FIS have the ability to handle imprecise, incomplete or linguistically ambiguous information and incorporate them into decision-making processes. In the developed FIS (Mamdani type) new linguistic variables, related to working conditions, operators’ experience and production were involved. The FIS was used for the estimation of the exploitable reserves of the Southern Field lignite deposit, located in the area of Ptolemais (Greece).

Michael Galetakis; Anthoula Vasiliou

2010-01-01T23:59:59.000Z

72

Cobalt cluster-assembled thin films deposited by low energy cluster beam deposition: Structural and magnetic investigations of deposited layers  

SciTech Connect

Cobalt cluster-assembled thin films were deposited on amorphous-carbon-coated copper grids and on silicon substrates at room temperature by low energy cluster beam deposition. Characterizations using high-resolution transmission electronic microscopy and atomic force microscopy reveal randomly stacked agglomerates of 9-11 nm diameter, which are themselves composed of small 3.6 nm diameter fcc cobalt clusters. The films are ferromagnetic up to room temperature and above, which implies that the clusters are exchange coupled. The approach to saturation is analyzed within the random anisotropy model. The values of the exchange coefficient A and the anisotropy constant K then derived are discussed. The temperature dependence of the coercivity below 100 K is discussed in terms of thermal activation effects. All results indicate that the fundamental entity governing the magnetic behaviors is constituted by the 9-11 nm diameter agglomerates rather than by the clusters themselves.

Dumas-Bouchiat, F.; Nagaraja, H. S.; Rossignol, F.; Champeaux, C.; Trolliard, G.; Catherinot, A.; Givord, D. [Centre de Projet Films Minces et Microdispositifs pour Telecommunications, SPCTS, UMR CNRS 6638, 123 Avenue Albert Thomas, 87060 Limoges Cedex (France); SPCTS, UMR CNRS 6638, ENSCI, 47 Avenue Albert Thomas, 87065 Limoges Cedex (France); Centre de Projet Films Minces et Microdispositifs pour Telecommunications, SPCTS, UMR CNRS 6638, 123 Avenue Albert Thomas, 87060 Limoges Cedex (France); SPCTS, UMR CNRS 6638, 123 Avenue Albert Thomas, 87060 Limoges Cedex (France); Centre de Projet Films Minces et Microdispositifs pour Telecommunications, SPCTS, UMR CNRS 6638, 123 Avenue Albert Thomas, 87060 Limoges Cedex (France); Laboratoire Louis Neel, UPR CNRS 5051, BP 166, F-38042 Grenoble Cedex (France)

2006-09-15T23:59:59.000Z

73

Resuspension of Small Particles from Multilayer Deposits in Turbulent Boundary Layers  

E-Print Network (OSTI)

We present a hybrid stochastic model for the resuspension of micron-size particles from multilayer deposits in a fully-developed turbulent boundary layer. The rate of removal of particles from any given layer depends upon the rate of removal of particles from the layer above which acts as a source of uncovering and exposure of particles to the resuspending flow. The primary resuspension rate constant for an individual particle within a layer is based on the Rock'n'Roll (R'n'R) model using non-Gaussian statistics for the aerodynamic forces acting on the particles (Zhang et al., 2012). The coupled layer equations that describe multilayer resuspension of all the particles in each layer are based on the generic lattice model of Friess & Yadigaroglu (2001) which is extended here to include the influence of layer coverage and particle size distribution. We consider the influence of layer thickness on the resuspension along with the spread of adhesion within layers, and the statistics of non-Gaussian versus Gaussian removal forces including their timescale. Unlike its weak influence on long-term resuspension rates for monolayers, this timescale plays a crucial and influential role in multilayer resuspension. Finally we compare model predictions with those of a large-scale and a mesoscale resuspension test, STORM (Castelo et al., 1999) and BISE (Alloul-Marmor, 2002).

F. Zhang; M. Reeks; M. Kissane; R. J. Perkins

2012-06-09T23:59:59.000Z

74

Resuspension of small particles from multilayer deposits in turbulent boundary layers  

Science Journals Connector (OSTI)

Abstract This paper describes a hybrid kinetic model for the resuspension of micron-size particles from multilayer deposits in a fully developed turbulent boundary layer. The rate of removal of particles from any given layer depends upon the rate of removal of particles from the layer above which acts as a source of uncovering and exposure of particles to the resuspending flow. The primary resuspension rate constant for an individual particle within a layer is based on the Rock'n'Roll (R'n'R) model using non-Gaussian statistics for the aerodynamic removal forces acting on the particles (Zhang et al., 2013). The coupled layer equations that describe multilayer resuspension of all the particles in each layer are based on the generic lattice model of Friess & Yadigaroglu (2001) which is extended here to include the influence of layer coverage and particle size distribution. The model is used to investigate a range of effects, including the influence of layer thickness on resuspension, the spread of inter-particle adhesive forces within layers, Gaussian and non-Gaussian pdfs for the removal forces and the associated timescales. Finally model predictions are compared with data from two resuspension experiments – STORM (Castelo et al., 1999) and BISE (Alloul-Marmor, 2002).

F. Zhang; M.W. Reeks; M.P. Kissane; R.J. Perkins

2013-01-01T23:59:59.000Z

75

Method of depositing a protective layer over a biaxially textured alloy substrate and composition therefrom  

DOE Patents (OSTI)

A laminate article consists of a substrate and a biaxially textured protective layer over the substrate. The substrate can be biaxially textured and also have reduced magnetism over the magnetism of Ni. The substrate can be selected from the group consisting of nickel, copper, iron, aluminum, silver and alloys containing any of the foregoing. The protective layer can be selected from the group consisting of gold, silver, platinum, palladium, and nickel and alloys containing any of the foregoing. The protective layer is also non-oxidizable under conditions employed to deposit a desired, subsequent oxide buffer layer. Layers of YBCO, CeO.sub.2, YSZ, LaAlO.sub.3, SrTiO.sub.3, Y.sub.2 O.sub.3, RE.sub.2 O.sub.3, SrRuO.sub.3, LaNiO.sub.3 and La.sub.2 ZrO.sub.3 can be deposited over the protective layer. A method of forming the laminate article is also disclosed.

Goyal, Amit (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); Paranthaman, Mariappan (Knoxville, TN); Lee, Dominic F. (Knoxville, TN); Feenstra, Roeland (Knoxville, TN); Norton, David P. (Gainesville, FL)

2002-01-01T23:59:59.000Z

76

In Situ Cycle-by-Cycle Flash Annealing of Atomic Layer Deposited Materials  

Science Journals Connector (OSTI)

Furthermore, these large thermal budget heating methods may overheat ALD reactor components such as the chamber O-ring. ... For example, the electrochemical properties of TiO2 have been shown to be dependent on the crystalline phase, with anatase TiO2 having desirable performance in photoelectrochemical applications such as dye-sensitized solar cells and photocatalysis. ...

Michael C. Langston; Neil P. Dasgupta; Hee Joon Jung; Manca Logar; Yu Huang; Robert Sinclair; Fritz B. Prinz

2012-11-02T23:59:59.000Z

77

Effect of buffer layer growth temperature on epitaxial GaN films deposited by magnetron sputtering  

SciTech Connect

Epitaxial GaN films were deposited by reactive sputtering of a GaAs target in 100 % nitrogen at 700 deg. C on ZnO buffer layers grown at different substrate temperatures over sapphire substrates. High resolution X-ray diffraction measurements and the corresponding analysis show that the growth temperature of buffer layers significantly affects the micro-structural parameters of GaN epilayer, such as lateral coherence length, tilt and twist, while the vertical coherence length remains unaffected. The optimum substrate temperature for buffer layer growth has been found to be 300 deg. C. High epitaxial quality GaN film grown on such a buffer layer exhibited micro strain of 1.8x10{sup -4} along with screw and edge type dislocation densities of 7.87x10{sup 9} and 1.16x10{sup 11}, respectively.

Mohanta, P.; Singh, D.; Kumar, R.; Ganguli, T.; Srinivasa, R. S.; Major, S. S. [Center For Research in Nano-Technology and Science (India); Semiconductor Laser Section, RRCAT, Indore-452013 (India); Department of Metallurgical Engineering and Materials Science (India); Department of Physics, Indian Institute of Technology Bombay, Mumbai - 400076 (India)

2012-06-05T23:59:59.000Z

78

Recrystallization of amorphous silicon deposited on ultra thin microcrystalline silicon layers  

SciTech Connect

This study reports on a method to reduce the thermal crystallization time and temperature of amorphous silicon films by initially depositing an ultra thin {micro}c-Si:H seed layer. After rapid thermal annealing (RTA), films were characterized by means of Raman spectroscopy, x-ray diffraction, reflection high energy electron diffraction, atomic force microscopy, and dark and photocurrent. The results show that the microcrystalline particles in the seed layer act as nucleation centers, promoting crystallization of a-Si:H at lower temperatures and at shorter times, compared to a-Si:H films deposited without any seed layer. Additionally, it was found that the seed layer affects the orientation of the crystallized films. The dark current increases abruptly over 4 orders of magnitude in the first 15 second anneal, then decreases as the time increases, and tends to saturate. The photocurrent has an opposite behavior. These transport results can be understood in terms of a change in defect density and band gap shrinkage.

Wang, F.; Wolfe, D.; Lucovsky, G.

1997-07-01T23:59:59.000Z

79

Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition  

SciTech Connect

Carbon layer has been grown on a Ni/SiO{sub 2}/Si(111) substrate under high vacuum pressure by pulse arc plasma deposition. From the results of Raman spectroscopy for the sample, it is found that graphene was formed by ex-situ annealing of sample grown at room temperature. Furthermore, for the sample grown at high temperature, graphene formation was shown and optimum temperature was around 1000 Degree-Sign C. Transmission electron microscopy observation of the sample suggests that the graphene was grown from step site caused by grain of Ni film. The results show that the pulse arc plasma technique has the possibility for acquiring homogenous graphene layer with controlled layer thickness.

Fujita, K.; Banno, K.; Aryal, H. R.; Egawa, T. [Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-Ku, Nagoya 466-8555 (Japan)

2012-10-15T23:59:59.000Z

80

CF4 Glow Discharge Modification of CH4 Plasma Polymer Layers Deposited onto Asymmetric Polysulfone Gas Separation Membranes  

Science Journals Connector (OSTI)

Post CF4 glow discharge modification of methane plasma polymer layers deposited onto asymmetric polysulfone membranes has been investigated by XPS, FTIR, AFM, and gas permeability measurements. Oxygen and nitrogen gas permeability and permselectivity ...

J. Hopkins; J. P. S. Badyal

1996-08-21T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Atomic Layer Deposition of TiO2 on Aerogel Templates: New Photoanodes for Dye-Sensitized Solar Cells  

Science Journals Connector (OSTI)

Atomic layer deposition was employed to coat the aerogel template conformally with various thicknesses of TiO2 with subnanometer precision. ... The TiO2-coated aerogel membranes were incorporated as photoanodes in dye-sensitized solar cells. ...

Thomas W. Hamann; Alex B. F. Martinson; Jeffrey W. Elam; Michael J. Pellin; Joseph T. Hupp

2008-06-18T23:59:59.000Z

82

Impact of titanium addition on film characteristics of HfO{sub 2} gate dielectrics deposited by atomic layer deposition  

SciTech Connect

The impact of 8-to 45-at. % Ti on physical and electrical characteristics of atomic-layer-deposited and annealed hafnium dioxide was studied using vacuum-ultraviolet spectroscopic ellipsometry, secondary ion mass spectroscopy, transmission electron microscopy, atomic force microscopy, x-ray diffraction, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and x-ray reflectometry. The role of Ti addition on the electrical performance is investigated using molybdenum (Mo)-gated capacitors. The film density decreases with increasing Ti addition. Ti addition stabilizes the amorphous phase of HfO{sub 2}, resulting in amorphous films as deposited. After a high-temperature annealing, the films transition from an amorphous to a polycrystalline phase. Orthorhombic Hf-Ti-O peaks are detected in polycrystalline films containing 33-at. % or higher Ti content. As Ti content is decreased, monoclinic HfO{sub 2} becomes the predominant microstructure. No TiSi is formed at the dielectric/Si interface, indicating films with good thermal stability. The band gap of Hf-Ti-O was found to be lower than that of HfO{sub 2}. Well-behaved capacitance-voltage and leakage current density-voltage characteristics were obtained for Hf-Ti-O. However, an increased leakage current density was observed with Ti addition. The data from capacitance-voltage stressing indicate a smaller flatband voltage (V{sub fb}) shift in the HfO{sub 2} films with low Ti content when compared with the HfO{sub 2} films. This indicates less charge trapping with a small amount of Ti addition.

Triyoso, D.H.; Hegde, R.I.; Zollner, S.; Ramon, M.E.; Kalpat, S.; Gregory, R.; Wang, X.-D.; Jiang, J.; Raymond, M.; Rai, R.; Werho, D.; Roan, D.; White, B.E. Jr.; Tobin, P.J. [Freescale Semiconductor, Inc., Advanced Products Research and Development Laboratory, 3501 Ed Bluestein Boulevard, Austin, Texas 78721 (United States)

2005-09-01T23:59:59.000Z

83

Growth mechanism of atomic layer deposition of zinc oxide: A density functional theory approach  

SciTech Connect

Atomic layer deposition of zinc oxide (ZnO) using diethylzinc (DEZ) and water is studied using density functional theory. The reaction pathways between the precursors and ZnO surface sites are discussed. Both reactions proceed by the formation of intermediate complexes on the surface. The Gibbs free energy of the formation of these complexes is positive at temperatures above ?120?°C and ?200?°C for DEZ and water half-reactions, respectively. Spectroscopic ellipsometry results show that the growth per cycle changes at approximately the same temperatures.

Afshar, Amir; Cadien, Kenneth C., E-mail: kcadien@ualberta.ca [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)

2013-12-16T23:59:59.000Z

84

Atomic layer deposition of ZnO on ultralow-density nanoporous silica aerogel monoliths  

Science Journals Connector (OSTI)

We report on atomic layer deposition of an ? 2 -nm-thick ZnO layer on the inner surface of ultralow-density ( ? 0.5 % of the full density) nanoporoussilica aerogel monoliths with an extremely large effective aspect ratio of ? 10 5 (defined as the ratio of the monolith thickness to the average pore size). The resultant monoliths are formed by amorphous- SiO 2 core/wurtzite-ZnO shell nanoparticles which are randomly oriented and interconnected into an open-cell network with an apparent density of ? 3 % and a surface area of ? 10 0 m 2 g ? 1 . Secondary ion mass spectrometry and high-resolution transmission electron microscopy imaging reveal excellent uniformity and crystallinity of ZnO coating. Oxygen K -edge and Zn L 3 -edge soft x-ray absorption near-edge structure spectroscopy shows broadened O p - as well as Zn s - and d -projected densities of states in the conduction band.

S. O. Kucheyev; J. Biener; Y. M. Wang; T. F. Baumann; K. J. Wu; T. van Buuren; A. V. Hamza; J. H. Satcher Jr.; J. W. Elam; M. J. Pellin

2005-01-01T23:59:59.000Z

85

Improved oxidation resistance of organic/inorganic composite atomic layer deposition coated cellulose nanocrystal aerogels  

Science Journals Connector (OSTI)

Cellulose nanocrystal (CNC) aerogels are coated with thin conformal layers of Al2O3 using atomic layer deposition to form hybrid organic/inorganic nanocomposites. Electron probe microanalysis and scanning electron microscopy analysis indicated the Al2O3 penetrated more than 1500??m into the aerogel for extended precursor pulse and exposure/purge times. The measured profile of coated fiber radius versus depth from the aerogel surface agrees well with simulations of precursor penetration depth in modeled aerogel structures. Thermogravimetric analysis shows that Al2O3 coated CNC aerogel nanocomposites do not show significant thermal degradation below 295?°C as compared with 175?°C for uncoated CNC aerogels an improvement of over 100?°C.

2014-01-01T23:59:59.000Z

86

Atomic Layer Deposition Preparation of Pd Nanoparticles on a Porous Carbon Support for Alcohol Oxidation  

Science Journals Connector (OSTI)

The ALD-prepared catalyst was characterized by atomic emission spectroscopy (AES) (ICP-AES, Varian Liberty series II), X-ray diffraction, (XRD) (PanAnalytical X’Pert Pro), X-ray photoelectron spectroscopy (XPS) (SSX-100), transmission electron microscopy (TEM) (Tecnai 12 Bio Twin with LaB6 gun at 120 kV), and scanning electron microscopy (SEM) equipped with energy-dispersive spectroscopy (EDS) (JEOL JSM-7500FA). ... CNB-E project through the Multidisciplinary Institute of Digitalization and Energy (MIDE) program and Academy of Finland are acknowledged for financial support. ...

Emma Rikkinen; Annukka Santasalo-Aarnio; Sanna Airaksinen; Maryam Borghei; Ville Viitanen; Jani Sainio; Esko I. Kauppinen; Tanja Kallio; A. Outi I. Krause

2011-10-24T23:59:59.000Z

87

Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications  

Science Journals Connector (OSTI)

This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate \\{TFTs\\} were fabricated and its electrical characteristics were measured.

S.M. Sultan; O.D. Clark; T.B. Masaud; Q. Fang; R. Gunn; M.M.A. Hakim; K. Sun; P. Ashburn; H.M.H. Chong

2012-01-01T23:59:59.000Z

88

Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol B. B. Burton,  

E-Print Network (OSTI)

temperatures and higher TPS pressures. SiO2 ALD thicknesses of 125-140 � were observed at the highest TPS requires high temperatures of >325 °C and large reactant exposure of >109 L (1 L ) 10-6 Torr s).4-7 However ALD films using liquid tris(tert-pentoxy)silanol (TPS). The SiO2 film thicknesses were determined

George, Steven M.

89

Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations  

SciTech Connect

The importance of O{sub 3} pulse duration for encapsulation of organic light emitting diodes (OLEDs) with ultra thin inorganic atomic layer deposited Al{sub 2}O{sub 3} layers is demonstrated for deposition temperatures of 50 °C. X-ray reflectivity (XRR) measurements show that O{sub 3} pulse durations longer than 15?s produce dense and thin Al{sub 2}O{sub 3} layers. Correspondingly, black spot growth is not observed in OLEDs encapsulated with such layers during 91 days of aging under ambient conditions. This implies that XRR can be used as a tool for process optimization of OLED encapsulation layers leading to devices with long lifetimes.

Singh, Aarti, E-mail: aarti.singh@namlab.com; Schröder, Uwe [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany)] [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany); Klumbies, Hannes; Müller-Meskamp, Lars; Leo, Karl [Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany)] [Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany); Geidel, Marion; Knaut, Martin; Hoßbach, Christoph; Albert, Matthias [Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)] [Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany); Mikolajick, Thomas [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany) [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany); Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)

2013-12-02T23:59:59.000Z

90

Hierarchical functional layers on high-capacity lithium-excess cathodes for superior lithium ion batteries  

Science Journals Connector (OSTI)

Abstract Li-excess layered Li[Li0.2Mn0.54Ni0.13Co0.13]O2 (LMNCO) nanoparticles are facilely synthesized using a surfactant-assisted dispersion method. Ultrathin and conformal oxide coatings are deposited on the surface of individual LMNCO nanoparticle via atomic layer deposition (ALD). The effect of oxide ALD coatings on improving electrochemical performance of LMNCO electrodes is evaluated and optimized via tuning the coating thickness and composition. In addition, we synthesize a novel core–shell structure cathode consisting of Li-excess LMNCO as core and Li-stoichiometric material as shell, and its electrochemical property is optimized by tailoring weight content and composition of shell materials. Finally, electrochemical performance of Li-excess cathode material can be maximized by surface modification with hierarch functional layers composed of 10 wt.% LiCoO2 shell (?10 nm thick) and 6ZrO2 ALD layers (?1 nm thick), which delivers very high initial discharge capacities of 296.4, 259.8, 156.6 and 104.2 mAh g?1 at 0.1C, 1C, 5C and 10C, and can retain 184.0 mAh g?1 at 1C after 100 electrochemical cycles. Such remarkably improved cycleabilitiy and rate capability of nanoarchitected Li-excess layered cathode material can be attributed to the synergic effect from hierarchical functional coatings to reduce electrochemical polarization, structural degradation and side reactions during electrochemical cycling.

Jianqing Zhao; Saad Aziz; Ying Wang

2014-01-01T23:59:59.000Z

91

Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier  

SciTech Connect

Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells.

Ip, Alexander H.; Labelle, André J.; Sargent, Edward H., E-mail: ted.sargent@utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada)

2013-12-23T23:59:59.000Z

92

Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition  

SciTech Connect

ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10{sup 3}, better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

Zhang Jian; Yang Hui; Zhang Qilong [Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)] [Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Dong Shurong [Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China)] [Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China); Luo, J. K. [Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China) [Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China); Institute of Material Research and Innovation, Bolton University, Deane Road, Bolton BL3 5AB (United Kingdom)

2013-01-07T23:59:59.000Z

93

Highly efficient flexible inverted organic solar cells using atomic layer deposited ZnO as electron selective layer  

E-Print Network (OSTI)

advancements, the power conversion efficiency (PCE) of organic solar cells (OSCs) has been improved with PCE more than 4% was demonstrated.7 However,Cs2CO3 exhibitsdeliquescencewhichaffects severely a PCE of 3.09%.14 Hau et al. adopted spin-coated ZnO nanoparticles as the electron selective layer

94

Microstructural characteristics of the built up layer of a precipitation hardened nickel based superalloy by electrospark deposition  

Science Journals Connector (OSTI)

Abstract Buildup of precipitation hardened nickel base superalloys by electro spark deposition due to the low heat input of the process has many attractions. Characterization of the microstructure of the ESD built up layer of IN738LC over an as-cast base metal is accomplished in this work. The grain structure and solidification texture of the coating are investigated by orientation imaging microscopy (OIM), optical and scanning electron microscopy. It is shown that the deposited layer is formed mainly through epitaxial nucleation and growth on the base metal structure while discontinuities acting as nucleation sites produce fine grains with independent orientations. It is shown that such independent grains can have a significant role in improving the integrity of the ESD built up layer, since they can act as crack arrest sites and make the coating more resistant to the propagation of liquation and solidification fissures. Moreover, it is found that nanosized ?? precipitates exist in the coating indicating the high tendency of ?? for precipitation even in the extremely high cooling rates involved in the ESD process. Hardness measurements indicated a higher hardness for the built up layer which is attributable to the finer microstructure of the coating.

M. Ebrahimnia; F. Malek Ghaini; Y.J. Xie; H. Shahverdi

2014-01-01T23:59:59.000Z

95

Interfacial mixing in as-deposited Si/Ni/Si layers analyzed by x-ray and polarized neutron reflectometry  

Science Journals Connector (OSTI)

Interdiffusion occurring across the interfaces in a Si/Ni/Si layered system during deposition at room temperature was probed using x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Exploiting the complementarity of these techniques, both structural and magnetic characterization with nanometer depth resolution could be achieved. Suitable model fitting of the reflectivity profiles identified the formation of Ni–Si mixed alloy layers at the Si/Ni and Ni/Si interfaces. The physical parameters of the layered structure, including quantitative assessment of the stoichiometry of interfacial alloys, were obtained from the analyses of XRR and PNR patterns. In addition, PNR provided magnetic moment density profile as a function of depth in the stratified medium.

Debarati Bhattacharya; Saibal Basu; Surendra Singh; Sumalay Roy; Bhupendra Nath Dev

2012-01-01T23:59:59.000Z

96

CdS/CdTe Solar Cells Containing Directly-Deposited CdSxTe1-x Alloy Layers  

SciTech Connect

A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdS{sub x}Te{sub 1-x} films of lower S content (x<;0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment (HT) at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} HT. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdS{sub x}Te{sub 1-x} alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl{sub 2} HT is performed. Further investigation is required to determine whether the CdCl{sub 2} heat treatment step can be altered or eliminated through direct deposition of the alloy layer.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-01-01T23:59:59.000Z

97

ALD and Pulsed CVD of Ruthenium and Ruthenium Dioxide Thin Films From an Amidinate Precursor  

E-Print Network (OSTI)

Narrow window of O2 exposure (e.g. 0.02~0.04 Torr·s @ 325ºC) to obtain high quality pure Ru filmALD and Pulsed CVD of Ruthenium and Ruthenium Dioxide Thin Films From an Amidinate Precursor Xinwei, China Introduction Experimental ALD with O2 Ru metal film Pulsed CVD with NH3+H2 Ru metal film Pulsed

98

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer  

DOE Patents (OSTI)

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1980-01-01T23:59:59.000Z

99

Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor  

SciTech Connect

The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO{sub 2} thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr){sub 3}SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO{sub 2} films at temperatures as low as 50?°C without carbon impurities. In addition, films obtained with plasma ignition times of 3?s and 10?s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO{sub 2} films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS.

Jeon, Ki-Moon [Vacuum Center, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Advanced Materials Engineering, Dae Jeon University, Daejeon 300-716 (Korea, Republic of); Shin, Jae-Su [Department of Advanced Materials Engineering, Dae Jeon University, Daejeon 300-716 (Korea, Republic of); Yun, Ju-Young [Vacuum Center, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Nano and Bio Surface Science, University of Science and Technology (UST), Daejeon 305-333 (Korea, Republic of); Jun Lee, Sang [Center of Nanomaterials Characterization, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Nano Science, University of Science and Technology (UST), Daejeon 305-333 (Korea, Republic of); Kang, Sang-Woo, E-mail: swkang@kriss.re.kr [Vacuum Center, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Advanced Device Technology, University of Science and Technology (UST), Daejeon 305-333 (Korea, Republic of)

2014-05-15T23:59:59.000Z

100

Abstract --A physical-vapour-deposition (PVD) of AlN thin films is presented in this paper. For AlN layers that are  

E-Print Network (OSTI)

high quality layers with as high as possible thermal conductivity kTH, different materials have been are developed. The deposition parameters are tuned to guarantee low stress, high thermal conductivity , the dielectric constant about 8, and the thermal conductivity around -1 -1 11 Wm K . The deposition conditions

Technische Universiteit Delft

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101

The Effect of Laser Energy and Target–Substrate Distance on the Quality of CeO2 Seed Layer Deposited by PLD  

Science Journals Connector (OSTI)

In this work, CeO2...seed layers have been deposited on RABiTS substrates by pulsed laser deposition (PLD) in a reel-to-reel chamber. We have systematically investigated the effect of laser energy and target–subs...

Xiaokun Song; Dan Hong; Ying Wang…

2011-07-01T23:59:59.000Z

102

Deposition of TiN and HfO{sub 2} in a commercial 200 mm remote plasma atomic layer deposition reactor  

SciTech Connect

The authors describe a remote plasma atomic layer deposition reactor (Oxford Instruments FlexAL trade mark sign ) that includes an inductively coupled plasma source and a load lock capable of handling substrates up to 200 mm in diameter. The deposition of titanium nitride (TiN) and hafnium oxide (HfO{sub 2}) is described for the combination of the metal-halide precursor TiCl{sub 4} and H{sub 2}-N{sub 2} plasma and the combination of the metallorganic precursor Hf[N(CH{sub 3})(C{sub 2}H{sub 5})]{sub 4} and O{sub 2} plasma, respectively. The influence of the plasma exposure time and substrate temperature has been studied and compositional, structural, and electrical properties are reported. TiN films with a low Cl impurity content were obtained at 350 deg. C at a growth rate of 0.35 A /cycle with an electrical resistivity as low as 150 {mu}{omega} cm. Carbon-free (detection limit <2 at. %) HfO{sub 2} films were obtained at a growth rate of 1.0 A /cycle at 290 deg. C. The thickness and resisitivity nonuniformity was <5% for the TiN and the thickness uniformality was <2% for the HfO{sub 2} films as determined over 200 mm wafers.

Heil, S. B. S.; Hemmen, J. L. van; Hodson, C. J.; Singh, N.; Klootwijk, J. H.; Roozeboom, F.; Sanden, M. C. M. van de; Kessels, W. M. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Oxford Instruments Plasma Technology, North End, Yatton BS49 4AP (United Kingdom); Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); NXP Semiconductors Research, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

2007-09-15T23:59:59.000Z

103

Band offsets of Al{sub 2}O{sub 3} and HfO{sub 2} oxides deposited by atomic layer deposition technique on hydrogenated diamond  

SciTech Connect

High-k oxide insulators (Al{sub 2}O{sub 3} and HfO{sub 2}) have been deposited on a single crystalline hydrogenated diamond (H-diamond) epilayer by an atomic layer deposition technique at temperature as low as 120 Degree-Sign C. Interfacial electronic band structures are characterized by X-ray photoelectron spectroscopy. Based on core-level binding energies and valence band maximum values, valence band offsets are found to be 2.9 {+-} 0.2 and 2.6 {+-} 0.2 eV for Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions, respectively. Band gaps of the Al{sub 2}O{sub 3} and HfO{sub 2} have been determined to be 7.2 {+-} 0.2 and 5.4 {+-} 0.2 eV by measuring O 1s energy loss spectra, respectively. Both the Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions are concluded to be type-II staggered band configurations with conduction band offsets of 1.2 {+-} 0.2 and 2.7 {+-} 0.2 eV, respectively.

Liu, J. W.; Liao, M. Y.; Imura, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Koide, Y. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2012-12-17T23:59:59.000Z

104

Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel  

E-Print Network (OSTI)

) deposition temperatures under 350 °C (due to the thermal instability of low-k materials); (8) good growth, and electrically conducting. All of the films showed good adhesion to the substrates, were acid-resistant, and did resistivity than aluminum, 1.7 versus 2.7 µ-cm, respectively (bulk values). This property of copper enables

105

Air-stable ink for scalable, high-throughput layer deposition  

DOE Patents (OSTI)

A method for producing and depositing air-stable, easily decomposable, vulcanized ink on any of a wide range of substrates is disclosed. The ink enables high-volume production of optoelectronic and/or electronic devices using scalable production methods, such as roll-to-roll transfer, fast rolling processes, and the like.

Weil, Benjamin D; Connor, Stephen T; Cui, Yi

2014-02-11T23:59:59.000Z

106

Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices  

E-Print Network (OSTI)

2003 Friction and wear are major concerns in the performance and reliability of microelectromechanical aluminum and water. Deposition is carried out in a viscous flow reactor at 1 Torr and 168 °C, with N2 as a carrier gas. Cross-section transmission electron microscopy analysis shows that films are uniform

George, Steven M.

107

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.  

SciTech Connect

The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250°C, the temperature may reach 1600°C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

2013-08-01T23:59:59.000Z

108

Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers  

SciTech Connect

Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-21T23:59:59.000Z

109

Performance of Anode-Supported Solid Oxide Fuel Cell with Thin Bi-Layer Electrolyte by Pulsed Laser Deposition  

SciTech Connect

Anode-supported yttria stabilized zirconia (YSZ)/samaria doped ceria (SDC) bi-layer electrolytes with uniform thickness and high density were fabricated by pulsed laser deposition at 1000 degrees C. Fuel cells with such bi-layer electrolytes were fabricated and tested, yielding open circuit voltages from 0.94 to 1.0 V at 600-700 degrees C. Power densities from 0.4 to 1.0 W cm{sup -2} at 0.7 V were achieved in air at temperatures of 600-700 degrees C. Cell performance was improved in flowing oxygen, with an estimated peak power density of over 2 W cm{sup -2} at 650 degrees C, assuming the same overall resistance over the entire range of current density. The high cell performance was attributed to the very low ohmic resistance of the fuel cell, owing to the small thickness of the electrolyte. Stable performance was also demonstrated in that the voltage of the fuel cell showed very little change at a constant current density of 1 A cm{sup -2} during more than 400 hours of operation at 650 degrees C in flowing oxygen. SEM analysis of the fuel cell after testing showed that the bi-layer electrolyte had retained its chemical and mechanical integrity.

Lu, Zigui; Hardy, John S.; Templeton, Jared W.; Stevenson, Jeffry W.; Fisher, Daniel; Wu, Naijuan; Ignatiev, Alex

2012-07-15T23:59:59.000Z

110

More stable hybrid organic solar cells deposited on amorphous Si electron transfer layer  

SciTech Connect

We report on defect densities, performance, and stability of organic/inorganic hybrid solar cells produced using n-doped inorganic amorphous silicon-carbide layers as the electron transport layer (ETL). The organic material was poly-3-hexyl-thiophene (P3HT) and heterojunction was formed using phenyl-C{sub 71}-Butyric-Acid-Methyl Ester (PCBM). For comparison, inverted solar cells fabricated using Cs{sub 2}CO{sub 3} as ETL were fabricated. Defect densities and subgap quantum efficiency curves were found to be nearly identical for both types of cells. The cells were subjected to 2xsun illumination and it was found that the cells produced using doped a-Si as ETL were much more stable than the cells produced using Cs{sub 2}CO{sub 3}.

Samiee, Mehran; Modtland, Brian; Dalal, Vikram L., E-mail: vdalal@iastate.edu [Iowa State University, Dept. of Electrical and Computer Engineering, Ames, Iowa 50011 (United States); Aidarkhanov, Damir [Nazarbayev University, Astana (Kazakhstan)

2014-05-26T23:59:59.000Z

111

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride  

SciTech Connect

Al{sub 2}O{sub 3} films, HfO{sub 2} films, and HfO{sub 2}/Al{sub 2}O{sub 3} stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H{sub 2}/N{sub 2} plasma at 650 Degree-Sign C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 Degree-Sign C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 Degree-Sign C. The valence band and conduction band offsets (VBOs and CBOs) of the Al{sub 2}O{sub 3}/GaN and HfO{sub 2}/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al{sub 2}O{sub 3} layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO{sub 2}/IPL/GaN structures. The VBOs were {approx}0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO{sub 2} with respect to Al{sub 2}O{sub 3} and GaN, respectively.

Yang Jialing; Eller, Brianna S.; Zhu Chiyu; England, Chris; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

2012-09-01T23:59:59.000Z

112

Effective work function of Pt, Pd, and Re on atomic layer deposited HfO{sub 2}  

SciTech Connect

Platinum and Pd show a significant difference in work function on SiO{sub 2} and high-K materials (HfO{sub 2}). The effective metal work functions for Pd, Pt, and Re on atomic layer deposited HfO{sub 2}, which are different from the vacuum work function and important for device threshold voltage control, are measured by the C-V method. The difference is attributed to the dipoles at the metal/HfO{sub 2} interface, which is a result of charge transfer across the interface. Moreover, the extracted charge neutrality level and screening parameter are correlated with the phase development, film stoichiometry, and density of interface states at the metal/high-K interface.

Gu Diefeng; Dey, Sandwip K.; Majhi, Prashant [Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287-6006 (United States) and Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Planar CMOS Scaling, SEMATECH, Austin, Texas 78741 (United States)

2006-08-21T23:59:59.000Z

113

Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition  

SciTech Connect

We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and a top gate contact. The ZnO active channel and thin high-? HfO{sub 2} dielectric utilized are both grown by atomic layer deposition at temperatures less than 130?°C, and their material and electronic properties are characterized. These SGTFTs demonstrate enhancement-mode operation with a threshold voltage of 0.91?V, electron mobility of 3.9 cm{sup 2} V{sup ?1} s{sup ?1}, and low subthreshold swing of 192?mV/decade. The devices also exhibit a unique combination of high breakdown voltages (>20?V) with low output conductances.

Ma, Alex M.; Gupta, Manisha; Shoute, Gem; Tsui, Ying Y.; Barlage, Douglas W., E-mail: barlage@ualberta.ca [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada); Afshar, Amir; Cadien, Kenneth C. [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)] [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)

2013-12-16T23:59:59.000Z

114

Investigation of Thermal Stability and Delivery of Cobalt Amidinates and Novel Cobalt Formamidinates for Metallic Cobalt by ALD/CVD  

E-Print Network (OSTI)

Investigation of Thermal Stability and Delivery of Cobalt Amidinates and Novel Cobalt Si nanowire devices[2]. The Co precursor selection for CVD and ALD is primarily based on good thermal Liquid Injection process (DLI). ¾ For CVD and ALD of cobalt, various sources such as Co2(CO)8, (tert

115

Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition  

SciTech Connect

We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO{sub 2} substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12 000 {mu}C/cm{sup 2}) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.

Iqbal, M. Z.; Kumar Singh, Arun; Iqbal, M. W.; Seo, Sunae; Eom, Jonghwa [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

2012-04-15T23:59:59.000Z

116

A quantum chemical study of ZrO2 atomic layer deposition growth reactions on the SiO2 surface  

E-Print Network (OSTI)

A quantum chemical study of ZrO2 atomic layer deposition growth reactions on the SiO2 surface Department, Ford Research Laboratory, Ford Motor Company, Dearborn, MI 48121, USA c Department of Chemistry to replace silicon oxide (SiO2) as the gate dielectric for future generation metal-oxide-semiconductor (MOS

Garfunkel, Eric

117

Zigzag and helical AlN layer prepared by glancing angle deposition and its application as a buffer layer in a GaN-based light-emitting diode  

Science Journals Connector (OSTI)

This study investigates an aluminum nitride (AlN) nanorod structure sputtered by glancing angle deposition (GLAD) and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The ray tracing ...

Lung-Chien Chen; Ching-Ho Tien; Liu Xuguang; Xu Bingshe

2012-01-01T23:59:59.000Z

118

Thermal stability and long term hydrogen/deuterium release from soft to hard amorphous carbon layers analyzed using in-situ Raman spectroscopy. Comparison with Tore Supra deposits  

E-Print Network (OSTI)

The thermal stability of 200 nm thick plasma enhanced chemical vapor deposited a-C:H and a-C:D layers ranging from soft to hard layers has been studied and compared to that of deposits collected on the Tore Supra tokamak plasma facing components by means of in-situ Raman spectroscopy. Linear ramp heating and long term isotherms (from several minutes to 21 days) have been performed and correlations between spectrometric parameters have been found. The information obtained on the sp 2 clustering has been investigated by comparing the G band shift and the 514 nm photon absorption evolution due to the thermal treatment of the layer. The effects of isotopic substitution have also been investigated.

Pardanaud, C; Giacometti, G; Mellet, N; Pégourié, B; Roubin, P

2015-01-01T23:59:59.000Z

119

Monitoring of thin layer deposits of high temperature superconducting materials by energy-dispersive X-ray fluorescence technique (EDXRF)  

Science Journals Connector (OSTI)

We present here a method for rapidly monitoring the composition of samples deposited on a substrate. This was applied to the case of superconducting material YBa2Cu3O7 deposited by laser evaporation on quartz pla...

Madan Lal; R K Choudhury

1988-05-01T23:59:59.000Z

120

Influences of alcoholic solvents on spray pyrolysis deposition of TiO{sub 2} blocking layer films for solid-state dye-sensitized solar cells  

SciTech Connect

Influences of alcoholic solvents for titanium diisopropoxide bis(acetylacetonate) (TPA) precursor solutions on the spray pyrolysis deposited TiO{sub 2} films and the photovoltaic performance of the solid-state dye-sensitized solar cells (SDSCs) using these TiO{sub 2} films as the blocking layers were investigated. Smooth TiO{sub 2} films were obtained by spray pyrolysis deposition of a TPA solution in isopropanol (IPA) at a relatively low temperature of 260 Degree-Sign C. On the other hand, when ethanol was used as solvent, the TiO{sub 2} films fabricated at the same temperature showed much rougher surfaces with many pinholes. Our results showed that ethanol reacts with TPA to form titanium diethoxide bis(acetylacetonate) (TEA), which requires a higher thermal decomposition temperature than that of TPA. SDSCs with TiO{sub 2} blocking layer films fabricated using a TPA solution in IPA showed higher power conversion efficiencies with smaller variations. - Graphical abstract: Alcoholic solvents used for the TiO{sub 2} precursor play a critical role in determining the surface morphology of blocking layers and thus the photovoltaic performance of the SDSCs. Highlights: Black-Right-Pointing-Pointer Solvent influences morphology of spray pyrolysis deposited TiO{sub 2} blocking layer. Black-Right-Pointing-Pointer Ethanol reacts with TPA, resulting poor quality of blocking layer. Black-Right-Pointing-Pointer Isopropanol is better than ethanol for obtaining smooth blocking layer. Black-Right-Pointing-Pointer SDSC with blocking layer made with isopropanol showed better performance.

Jiang, Changyun, E-mail: jiangc@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A-STAR, 3 Research Link, 117602 Singapore (Singapore)] [Institute of Materials Research and Engineering, A-STAR, 3 Research Link, 117602 Singapore (Singapore); Koh, Wei Lin; Leung, Man Yin [Institute of Materials Research and Engineering, A-STAR, 3 Research Link, 117602 Singapore (Singapore)] [Institute of Materials Research and Engineering, A-STAR, 3 Research Link, 117602 Singapore (Singapore); Hong, Wei [Department of Chemical Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Ave West ON, Waterloo, Canada N2L 3G1 (Canada)] [Department of Chemical Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Ave West ON, Waterloo, Canada N2L 3G1 (Canada); Li, Yuning, E-mail: yuning.li@uwaterloo.ca [Institute of Materials Research and Engineering, A-STAR, 3 Research Link, 117602 Singapore (Singapore) [Institute of Materials Research and Engineering, A-STAR, 3 Research Link, 117602 Singapore (Singapore); Department of Chemical Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Ave West ON, Waterloo, Canada N2L 3G1 (Canada); Zhang, Jie [Institute of Materials Research and Engineering, A-STAR, 3 Research Link, 117602 Singapore (Singapore)] [Institute of Materials Research and Engineering, A-STAR, 3 Research Link, 117602 Singapore (Singapore)

2013-02-15T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Light-Material Interactions in Energy Conversion - Energy Frontier...  

NLE Websites -- All DOE Office Websites (Extended Search)

Cambridge Nanotech Atomic Layer Deposition A Cambridge Nanotech (USA) Savannah S200 atomic layer deposition (ALD) system was purchased for conformal growth of metal oxide films....

122

Interface effect on dielectric constant of HfO{sub 2}/Al{sub 2}O{sub 3} nanolaminate films deposited by plasma-enhanced atomic layer deposition  

SciTech Connect

The effect of the interface between Al{sub 2}O{sub 3} and HfO{sub 2} sublayers on the dielectric constant was investigated in HfO{sub 2}/Al{sub 2}O{sub 3} nanolaminate films deposited using plasma-enhanced atomic layer deposition. After annealing at 700 deg. C, the dielectric constants of the nanolaminate films with a sublayer thickness of 40 A ring or greater were the same as the calculated values for a series of capacitors consisting of amorphous Al{sub 2}O{sub 3} and monoclinic or tetragonal HfO{sub 2}. As the sublayer thickness was reduced to 10 A, the dielectric constant increased up to 17.7 because a thin Hf-O-Al mixture layer, of which the number increases drastically in the nanolaminate films with thin sublayers, is formed at the interface.

Park, Pan Kwi; Cha, Eun-Soo; Kang, Sang-Won [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)

2007-06-04T23:59:59.000Z

123

The optimization of interfaces in InAsSb/InGaAs strained-layer superlattices grown by metal-organic chemical vapor deposition  

SciTech Connect

We have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) under a variety of conditions. Presence of an InGaAsSb interface layer is indicated by x-ray diffraction patterns. Optimized growth conditions involved the use of low pressure, short purge times, and no reactant flow during the purges. MOCVD was used to prepare an optically pumped, single heterostructure InAsSb/InGaAs SLS/InPSb laser which emitted at 3.9 {mu}m with a maximum operating temperature of approximately 100 K.

Biefeld, R.M.; Baucom, K.C.; Kurtz, S.R.

1993-12-31T23:59:59.000Z

124

Reduction of native oxides on InAs by atomic layer deposited Al{sub 2}O{sub 3} and HfO{sub 2}  

SciTech Connect

Thin high-{kappa} oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al{sub 2}O{sub 3} or HfO{sub 2} layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.

Timm, R.; Fian, A.; Hjort, M.; Thelander, C.; Lind, E.; Andersen, J. N.; Wernersson, L.-E.; Mikkelsen, A. [Department of Physics, Nanometer Structure Consortium, Lund University, P.O. Box 118, 22 100 Lund (Sweden)

2010-09-27T23:59:59.000Z

125

RealReal--Time Chemical SensingTime Chemical Sensing for Advanced Process Control in ALDfor Advanced Process Control in ALD  

E-Print Network (OSTI)

) Differential pumping Gas Inlet Gas Outlet 300 amu CIS mass-spec 35 µm orifice 5 Torr 100 mm wafer, substrate-heated Incomplete layer adsorption & reaction Multilayer adsorption & reaction Atomic Layer DepositionAtomic Layer Temperature-dependent growth Dose dependencies Incomplete layer adsorption & reaction Multilayer adsorption

Rubloff, Gary W.

126

Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters  

SciTech Connect

We have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) by metal-organic chemical vapor deposition using a variety of growth conditions. Presence of an InGaAsSb interface layer was indicated by x-ray diffraction. This interface effect was minimized by optimizing the purge times, reactant flows, and growth conditions. The optimized growth conditions involved the use of low pressure, short purge times between the growth of the layers, and no reactant flow during the purges. Electron diffraction indicates that CuPt-type compositional ordering occurs in InAs{sub 1{minus}x}Sb{sub x} alloys and SLSs which explains an observed bandgap reduction from previously accepted alloy values.

Biefeld, R.M.; Baucom, K.C.; Follstaedt, D.M.; Kurtz, S.R.

1994-08-01T23:59:59.000Z

127

Study of charge-collecting interlayers for single-junction and tandem organic solar cells.  

E-Print Network (OSTI)

??A hole-collecting interlayer layer for organic solar cells, NiO, processed by atomic layer deposition (ALD) was studied. ALD-NiO film offered a novel alternative to efficient… (more)

Shim, Jae Won

2014-01-01T23:59:59.000Z

128

Disilane-based cyclic deposition/etch of Si, Si:P and Si1?yCy:P layers: II. The CDE features  

Science Journals Connector (OSTI)

We have developed innovative cyclic deposition/etch (CDE) processes in order to grow Si, Si:P and Si1–yCy:P raised sources and drains (RSDs) on patterned wafers. A Si2H6 + PH3 + SiCH6 chemistry was used for the 550 °C growth steps. Meanwhile, the selective etch of poly-crystalline layers on dielectrics was conducted at 600 °C with HCl + GeH4. We have first studied the specifics of those isobaric (P = 20 Torr) CDE processes on bulk, blanket Si(0 0 1) substrates. CDE-grown Si, Si:P and Si1?yCy(:P) layers were high crystalline quality and smooth, although these also contained 2–3% of Ge. Due to the preferential incorporation of P atoms in the lattice, the 'apparent' substitutional C content was higher for intrinsic than for in situ phosphorous-doped layers (1.29% versus 1.17% and 1.59% versus 1.47% for the two SiCH6 mass-flows probed). The atomic P concentration in our Si1?yCy:P layers was close to 2.6 ? 1020 cm?3, versus 2.1 ? 1020 cm?3 in the Si:P layers. The Si, Si:P and Si1?yCy(:P) thickness deposited in each CDE cycle decreased linearly as the HCl+GeH4 etch time increased, with the 'equivalent' etch rate (i.e. the slope of this linear decrease) being lower in intrinsic than in in situ doped layers. Higher C contents resulted in lower 'equivalent' etch rates. A CDE strategy suppressed the surface roughening occurring for high C content, several tens of nm thick Si1?yCy:P layers grown in one step only. We have then calibrated, for 19–23 nm thick CDE-grown Si, Si:P and Si1?yCy:P RSDs, the HCl + GeH4 etch time per step necessary to achieve full selectivity on patterned silicon-on-insulator substrates. Selectivity was obtained for intrinsic Si once 180 s etch steps were used. Longer etch times were needed for Si:P and especially Si1?yCy:P (270 and 315 s/CDE cycle, respectively). The resulting S/D areas were rather smooth and slightly facetted, but the un-protected poly-Si layers sitting on top of the gate stacks were completely removed with these etch times.

J M Hartmann; V Benevent; J P Barnes; M Veillerot; B Prévitali; P Batude

2013-01-01T23:59:59.000Z

129

Thermal Stability and Substitutional Carbon Incorporation far above Solid-Solubility in Si1-xCx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition  

E-Print Network (OSTI)

Cx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition using Disilane M. S. Carroll*, J. C. Sturm on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane source gas and disilane is known to produce higher silicon epitaxial growth rates for similar partial

130

Vapor-deposited /sup 235/UO/sub 2/ layers for an ultra-high-sensitivity fission counter  

SciTech Connect

After evaluating the properties of uranium oxide coatings prepared by electrodeposition, painting and physical vapor deposition, the vapor deposition method was selected as being preferable for preparing coatings on aluminum electrodes having a total area of 5 m/sup 2/. The electrodes were used in an experimental fission chamber designed at the Oak Ridge National Laboratory for use as a neutron flux monitor the Clinch River Breeder Reactor. Initial testing of the Ultra-High Sensitivity Fission Counter (UHSFC) indicated that a tenfold increase in sensitivity was achieved as compared to commercially available fission counters. Techniques used in vapor coating and characterizing the /sup 235/UO/sub 2/ deposits on the large-area curved substrates are described.

Adair, H.L.; Byrum, B.L.; Dailey, J.M.; Gibson, J.R.

1982-01-01T23:59:59.000Z

131

Low-temperature formation of Si O 2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process  

Science Journals Connector (OSTI)

Silicon oxide ( Si O 2 ) layers were fabricated at low temperatures ( ? 400 ° C ) by combining the deposition of hydrogenated amorphous Si ( a - Si : H ) with its oxidation using atmospheric pressure plasmas excited by a 150 MHz very high-frequency (VHF) power. The surface excitation by the atmospheric pressure VHF plasma was capable of reducing the temperature for the hydrogen effusion from a - Si : H . As a result a porous a - Si : H film containing a large amount of hydrogen could be transformed into a stoichiometric Si O 2 with an approximately 24% increase in oxidation rate compared with the oxidation of Si(001) at a temperature of 400 ° C .

Hiroaki Kakiuchi; Hiromasa Ohmi; Makoto Harada; Heiji Watanabe; Kiyoshi Yasutake

2007-01-01T23:59:59.000Z

132

Highly transparent low capacitance plasma enhanced atomic layer deposition Al{sub 2}O{sub 3}-HfO{sub 2} tunnel junction engineering  

SciTech Connect

The development of metallic single electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions. These tunnel junctions should insure high tunnel current levels, low thermionic current, and low capacitance. The authors use atomic layer deposition to fabricate Al{sub 2}O{sub 3} and HfO{sub 2} thin layers. Tunnel barrier engineering allows the achievement of low capacitance Al{sub 2}O{sub 3} and HfO{sub 2} tunnel junctions using optimized annealing and plasma exposure conditions. Different stacks were designed and fabricated to increase the transparency of the tunnel junction while minimizing thermionic current. This tunnel junction is meant to be integrated in SET to enhance its electrical properties (e.g., operating temperature, I{sub ON}/I{sub OFF} ratio)

El Hajjam, Khalil, E-mail: khalil.el-hajjam@insa-lyon.fr [INL, INSA, UMR CNRS 5270, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France and Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada); Baboux, Nicolas; Calmon, Francis [INL, INSA, UMR CNRS 5270, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Souifi, Abdelkader [Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada); Poncelet, Olivier; Francis, Laurent A. [ICTEAM, ELEN, UCL, Place du Levant 3, 1348 Louvain-la-Neuve (Belgium); Ecoffey, Serge; Drouin, Dominique [Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada and Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada)

2014-01-15T23:59:59.000Z

133

L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer  

SciTech Connect

In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7?nm technology node and/or beyond.

Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

2014-04-21T23:59:59.000Z

134

High-Speed Data Transmission in Multi-Layer Deposited Silicon Photonics for Advanced Photonic Networks-on-Chip  

E-Print Network (OSTI)

the potential to supply an immense amount of bandwidth, while reducing the total energy consumption. The extent a waveguide coupled to a microring resonator, forming an optical filter with a through port (Fig. 3). The 60 layer, comprising another waveguide, providing a drop port to this optical filter (Fig. 3). All

Bergman, Keren

135

Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALD  

Science Journals Connector (OSTI)

Low pressure chemical vapour deposition (LPCVD) of [ZrCp2(NMe2)2] (1), [ZrCp2(?2-MeNCH2CH2NMe)] (2), [ZrCp?2(NMe2)2] (3) and [ZrCp?2(NEt2)2] (4) (Cp = ?5-cyclopentadienyl, Cp? = ?5-monomethylcyclopentadienyl), onto glass substrates at 600 °C, afforded highly reflective and adhesive films of zirconium carbide and amorphous carbon. Powder XRD indicated that the films were largely amorphous, although small, broad peaks accounting for ZrC and ZrO2 were present, suggesting that the remaining carbon was due to amorphous deposits from the cyclopentadienyl ligands. SEM images showed an island-growth mechanism with distinct crevices between the concentric nodules. Plasma-enhanced atomic layer deposition (PEALD) of compounds 1 and 2 showed that the precursors were not sufficiently stable or volatile to give a good rate of film growth.

Stephen E. Potts; Claire J. Carmalt; Christopher S. Blackman; Fawzi Abou-Chahine; Noémi Leick; W.M.M. Kessels; Hywel O. Davies; Peter N. Heys

2010-01-01T23:59:59.000Z

136

Low-temperature formation of SiO{sub 2} layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process  

SciTech Connect

Silicon oxide (SiO{sub 2}) layers were fabricated at low temperatures ({<=}400 deg. C) by combining the deposition of hydrogenated amorphous Si (a-Si:H) with its oxidation using atmospheric pressure plasmas excited by a 150 MHz very high-frequency (VHF) power. The surface excitation by the atmospheric pressure VHF plasma was capable of reducing the temperature for the hydrogen effusion from a-Si:H. As a result, a porous a-Si:H film containing a large amount of hydrogen could be transformed into a stoichiometric SiO{sub 2} with an approximately 24% increase in oxidation rate compared with the oxidation of Si(001) at a temperature of 400 deg. C.

Kakiuchi, Hiroaki; Ohmi, Hiromasa; Harada, Makoto; Watanabe, Heiji; Yasutake, Kiyoshi [Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)

2007-10-15T23:59:59.000Z

137

Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces  

SciTech Connect

An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-01T23:59:59.000Z

138

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition  

SciTech Connect

We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

Michon, A.; Vezian, S.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Ouerghi, A. [CNRS-LPN, Route de Nozay, 91460 Marcoussis (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

2010-10-25T23:59:59.000Z

139

Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits  

SciTech Connect

Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 M?/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10?k?/sq (of the order of its initial value). Moreover, the maximum current density of ?1.2?×?10{sup 7?}A/cm{sup 2} has been obtained for SLG (1?×?2.5??m{sup 2}) on SiO{sub 2}/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

Prasad, Neetu, E-mail: neetu.prasad@south.du.ac.in, E-mail: neetu23686@gmail.com; Kumari, Anita; Bhatnagar, P. K.; Mathur, P. C. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Bhatia, C. S. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2014-09-15T23:59:59.000Z

140

Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO{sub 2} using tetrakis(dimethylamido)titanium and water  

SciTech Connect

Atomic layer deposition of titanium dioxide using tetrakis(dimethylamido)titanium (TDMAT) and water vapor is studied by reflection-absorption infrared spectroscopy (RAIRS) with a time resolution of 120?ms. At 190?°C and 240?°C, a decrease in the absorption from adsorbed TDMAT is observed without any evidence of an adsorbed product. Ex situ measurements indicate that this behavior is not associated with an increase in the impurity concentration or a dramatic change in the growth rate. A desorbing decomposition product is consistent with these observations. RAIRS also indicates that dehydroxylation of the growth surface occurs only among one type of surface hydroxyl groups. Molecular water is observed to remain on the surface and participates in reactions even at a relatively high temperature (110?°C) and with long purge times (30?s)

Sperling, Brent A., E-mail: brent.sperling@nist.gov; Hoang, John; Kimes, William A.; Maslar, James E. [Chemical Sciences Division, National Institute of Standards and Technology, 100 Bureau Dr., Stop 8320, Gaithersburg, Maryland 20899-8320 (United States); Steffens, Kristen L. [Biomolecular Measurement Division, National Institute of Standards and Technology, 100 Bureau Dr., Stop 8362, Gaithersburg, Maryland 20899-8362 (United States); Nguyen, Nhan V. [Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, 100 Bureau Dr., Stop 8120, Gaithersburg, Maryland 20899-8120 (United States)

2014-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Disilane-based cyclic deposition/etch of Si, Si:P and Si1?yCy:P layers: I. The elementary process steps  

Science Journals Connector (OSTI)

We have benchmarked the 550 °C, 20 Torr growth of Si:P and Si1?yCy:P using SiH4 and Si2H6. P segregation has prevented us from reaching P+ ion concentrations in Si higher than a few 1019 cm?3 using SiH4; the resulting surface 'poisoning' led to a severe growth rate reduction. Meanwhile, [P+] increased linearly with the phosphine flow when using Si2H6 as the Si precursor; values as high as 1.7 ? 1020 cm?3 were obtained. The Si:P growth rate using Si2H6 was initially stable then increased as the PH3 flow increased. Mono-methylsilane flows 6.5–10 times higher were needed with Si2H6 than with SiH4 to reach the same substitutional C concentrations in intrinsic Si1?yCy layers ([C]subst. up to 1.9%). Growth rates were approximately six times higher with Si2H6 than with SiH4, however. 30 nm thick Si1?yCy layers became rough as [C]subst. exceeded 1.6% (formation of increasing numbers of islands). We have also studied the structural and electrical properties of 'low' and 'high' C content Si1?yCy:P layers (~ 1.5 and 1.8%, respectively) grown with Si2H6. Adding significant amounts of PH3 led to a reduction of the tensile strain in the films. This was due to the incorporation of P atoms (at the expense of C atoms) in the substitutional sites of the Si matrix. Si1?yCy:P layers otherwise became rough as the PH3 flow increased. Resistivities lower than 1 m? cm were nevertheless associated with those Si1?yCy:P layers, with P atomic concentrations at most 3.9 ? 1020 cm?3. Finally, we have quantified the beneficial impact of adding GeH4 to HCl for the low-temperature etching of Si. Etch rates 12–36 times higher with HCl + GeH4 than with pure HCl were achieved at 20 Torr. Workable etch rates close to 1 nm min?1 were obtained at 600 °C (versus 750 °C for pure HCl), enabling low-temperature cyclic deposition/etch strategies for the selective epitaxial growth of Si, Si:P and Si1?yCy:P layers on patterned wafers.

J M Hartmann; V Benevent; J P Barnes; M Veillerot; C Deguet

2013-01-01T23:59:59.000Z

142

NOIJLVaiSINIWaV NOIlVlAldOdNI AOU3N3 Z661  

Gasoline and Diesel Fuel Update (EIA)

61- 61- NOIJLVaiSINIWaV NOIlVlAldOdNI AOU3N3 Z661 This publication and other Energy Information Administration (EIA) publications may be purchased from the Superintendent of Documents, U.S. Government Printing Office. AH telephone orders should be directed to: U.S. Government Printing Office McPherson Square Bookstore 1510 H Street, N.W. Washington, DC 20005 (202)653-2050 FAX (202)376-5055 9 a.m. to 5 p.m., eastern time, M-F All mail orders should be directed to: Superintendent of Documents U.S. Government Printing Office Washington, DC 20402 (202)783-3238 FAX (202)512-2233 8 a.m. to 5 p.m., eastern time, M-F U.S. Government Printing Office c/o Mellon Bank P.O. Box 371954 Pittsburgh, PA 15250-7954 Complimentary subscriptions and single issues are available to certain groups of subscribers, such

143

LAKESHORE AVON BR ANT-EDEN ALD EN-LANC ASTER AU BURN W SH ELDON  

U.S. Energy Information Administration (EIA) Indexed Site

81 81 § ¨ ¦ 81 LAKESHORE AVON BR ANT-EDEN ALD EN-LANC ASTER AU BURN W SH ELDON CALEDONIA HURON C REEK LEIC EST ER COL DEN ASH FORD INDIAN FALLS LAWTONS SAR DINIA RPD-037 -2 GLENWOOD PU LASKI PAVILION CON CORD COL LINS N ELM A ORC HARD PARK-H AMBU RG DANLEY CORNERS ST ILLWAT ER CHAFF EE-ARCAD E FAYETT E-WATERLOO LAKEVIEW JAVA SEN EC A W ELLER Y AU RORA E ZOAR BU FFALO TIOGA SILVER LAKE AKR ON ROM E RAT HBON E ALM A BET HANY WYOMING ULYSSES BR ANCH W SAN DY CREEK COL LINS BLOOMFIELD E LEBANON STATE LINE ALLEN CHUR CHVILLE BATH ATT ICA ELLI COT VILLE ROU LETT E BR ADFORD BU FFALO CREEK PEN N YAN N BEECH HILL-INDEPENDENC E GERRY-CH ARLOTTE STAGECOACH CHIPMUN K HEBRON VIN CENT BALD WI NSVILLE AKELEY OLEAN COWLESVILLE AN NIN SMET HPORT BR ADLEY BR OOK BU STI FIVE MILE BLOOMFIELD W SEN EC A FALLS NILE STAGECOACH LEWIS R UN BR ADFORD CAMDEN VAN ETT EN ROAN OKE SH ARON RICHBU RG FULTON N FINN EGAN H ILL TONAWANDA

144

Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects  

SciTech Connect

100-nm-thick nanocrystalline silicon (nano-Si)-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 5–6 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL) measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ? 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.

Kosemura, Daisuke, E-mail: d-kose@isc.meiji.ac.jp; Mizukami, Yuki; Takei, Munehisa; Numasawa, Yohichiroh; Ogura, Atsushi [School of Science and Technology, Meiji University, Kawasaki 214-8571 (Japan)] [School of Science and Technology, Meiji University, Kawasaki 214-8571 (Japan); Ohshita, Yoshio [Toyota Technological Institute, Nagoya 468-8511 (Japan)] [Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-01-15T23:59:59.000Z

145

Energy band alignment of atomic layer deposited HfO{sub 2} on epitaxial (110)Ge grown by molecular beam epitaxy  

SciTech Connect

The band alignment properties of atomic layer HfO{sub 2} film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO{sub 2} film. The measured valence band offset value of HfO{sub 2} relative to (110)Ge was 2.28 {+-} 0.05 eV. The extracted conduction band offset value was 2.66 {+-} 0.1 eV using the bandgaps of HfO{sub 2} of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO{sub 2}/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

146

Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide...  

NLE Websites -- All DOE Office Websites (Extended Search)

Form (VOSF) and Layered Indium Selenide Thin Film Deposition by Laser Back Ablation. Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide Thin Film Deposition by...

147

Center for Nanophase Materials Sciences (CNMS) - Chemical Functionalit...  

NLE Websites -- All DOE Office Websites (Extended Search)

materials (metals, oxides) Atomic layer deposition (ALD) and surface sol-gel processing (SSG) for conformal functionalization of support surfaces (located outside of...

148

As-Received, Ozone Cleaned and Ar+ Sputtered Surfaces of Hafnium Oxide Grown by Atomic Layer Deposition and Studied by XPS  

SciTech Connect

In this study, X-ray photoelectron spectroscopy (XPS) characterization was performed on 47 nm thick hafnium oxide (HfO{sub 2}) films grown by atomic layer deposition using TEMA-Hf/H{sub 2}O at 250 C substrate temperature. HfO{sub 2} is currently being studied as a possible replacement for Silicon Oxide (SiO{sub 2}) as a gate dielectric in electronics transistors. XPS spectra were collected on a Physical Electronics Quantum 2000 Scanning ESCA Microprobe using a monochromatic Al K{sub a} X-ray (1486.7 eV) excitation source. The sample was analyzed under the following conditions: as received, after UV irradiation for five minutes, and after sputter cleaning with 2 kV Ar{sup +} ions for 180 seconds. Survey scans showed carbon, oxygen, and hafnium as the major species in the film, while the only minor species of argon and carbide was detected after sputtering. Adventitious carbon initially composed approximately 18.6 AT% of the surface, but after UV cleaning it was reduced to 2.4 AT%. This demonstrated that that the majority of carbon was due to adventitious carbon. However, after 2 kV Ar{sup +} sputtering there was still only trace amounts of carbon at {approx}1 AT%, Some of this trace carbon is now in the form of a carbide due to the interaction with Ar{sup +} used for sputter cleaning. Furthermore, the stoiciometric ratio of oxygen and hafnium is consistent with a high quality HfO{sub 2} film.

Engelhard, Mark H.; Herman, Jacob A.; Wallace, Robert; Baer, Donald R.

2012-06-27T23:59:59.000Z

149

Synchrotron radiation photoemission study of interfacial electronic structure of HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As(001)-4?×?2 from atomic layer deposition  

SciTech Connect

The growth of a passivating layer on a In{sub 0.53}Ga{sub 0.47}As(001)-4?×?2 surface by atomic-layer deposition of tetrakis[ethylmethylamino]Hafnium (TEMAHf)) followed by the water pulse was investigated by synchrotron radiation photoemission. The Hf atoms maintain four-fold coordination, both after the initial TEMAHf deposition and the subsequent water pulse. The Hf atoms initially bond to the As dangling bonds of the surface As atom located on the edges of the raised ridges. One EMA ligand is removed in this process. Subsequent water exposure substitutes OH ligand for one or more remaining EMA ligands. These in turn react with TEMAHf to form Hf-O-Hf bonds allowing the hafnium oxides to grow. The surface In atoms on the terrace of the raised ridges were partially removed, but none bonded of the precursor atoms. Correlations between the interfacial electronic structure and the electric performance are discussed.

Pi, T. W., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Lin, T. D.; Chang, Y. C.; Hong, M., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Lin, H. Y.; Kwo, J., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wertheim, G. K., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Woodland Consulting, 175 Woodland Ave., Morristown, New Jersey 07960 (United States)

2014-01-27T23:59:59.000Z

150

Experimental study on the energy deposition of an ns-DBD plasma actuator and its effect on a laminar boundary layer:.  

E-Print Network (OSTI)

??An experimental study aimed at the influence of different barrier materials on the energy deposition of nanosecond pulsed dielectric barrier discharge (ns-DBD) plasma actuator was… (more)

Winkel, R.

2015-01-01T23:59:59.000Z

151

Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition  

E-Print Network (OSTI)

2D nanoelectronics based on single-layer MoS[subscript 2] offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS[subscript 2] and ...

Wang, H.

152

2012 NNIN ALD Symposium ALD Staff Review  

E-Print Network (OSTI)

; Remote Assisted - $165 · Rates ­ Non-academic ­Regular - $120/hr; Assisted use - $165/hr; Remote Assisted Reaction Unit #12;Problems (cont.) · Hot lid...melts things. ­ Put heat shield on hinge (custom - drawing available) #12;Heat Shield Hinge #12;#12;#12;Problems (cont.) · Hot lid...melts things. ­ Put heat shield

153

Variable temperature semiconductor film deposition  

DOE Patents (OSTI)

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Li, X.; Sheldon, P.

1998-01-27T23:59:59.000Z

154

Molecular beam deposition of Al{sub 2}O{sub 3} on p-Ge(001)/Ge{sub 0.95}Sn{sub 0.05} heterostructure and impact of a Ge-cap interfacial layer  

SciTech Connect

We investigated the molecular beam deposition of Al{sub 2}O{sub 3} on Ge{sub 0.95}Sn{sub 0.05} surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge{sub 1-x}Sn{sub x} and Ge/Ge{sub 1-x}Sn{sub x} surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge{sub 1-x}Sn{sub x}/Al{sub 2}O{sub 3} gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge{sub 1-x}Sn{sub x} layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D{sub it}) in the range of 10{sup 12} eV{sup -1} cm{sup -2} in mid gap and higher close to the valence band edge.

Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001 Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001 Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2011-05-09T23:59:59.000Z

155

Effects of N{sub 2} remote plasma nitridation on the structural and electrical characteristics of the HfO{sub 2} gate dielectrics grown using remote plasma atomic layer deposition methods  

SciTech Connect

The characteristics of remote plasma atomic layer deposited HfO{sub 2} on Si, which has a very thin SiO{sub 2} interlayer with and without remote plasma nitridation (RPN), have been investigated. Small amounts of N atoms were successfully incorporated by RPN pretreatment, in which the dominant emission species were excited atomic nitrogen (N{sup *}) and excited molecular nitrogen (N{sub 2}{sup *}), into a very thin SiO{sub 2} interlayer for the growth of HfO{sub 2} thin film. The thin ({approx}1.5 nm) intermediate layer containing nitrogen, which was prepared by sequential O{sub 2} and N{sub 2} remote plasma treatment of the Si substrate, can effectively suppress growth of the unintentional interface layer. In addition, it enhances the thermal stability and the resistance to oxygen diffusion during rapid thermal annealing. The HfO{sub 2} film containing the remote plasma nitrided SiO{sub 2} interlayer annealed at 800 deg. C showed a lower equivalent oxide thickness of {approx}1.89 nm and a lower leakage current density (3.78x10{sup -7} A cm{sup -2} at |V{sub G}-V{sub FB}|=2 V) compared to a non-nitrided sample of the same physical thickness. Also, we compared the characteristics of HfO{sub 2} films annealed in two different ambient environments, N{sub 2} and O{sub 2}.

Choi, Jihoon; Kim, Seokhoon; Kim, Jinwoo; Kang, Hyunseok; Jeon, Hyeongtag; Bae, Choelhwyi [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2006-07-15T23:59:59.000Z

156

Seeding Conformal Dielectrics on Graphene J. M. P. Alaboson, Q. H. Wang, J. D. Emery, A. L. Lipson, M. J. Bedzyk, J. W. Elam, M. J. Pellin,  

E-Print Network (OSTI)

MRSEC Seeding Conformal Dielectrics on Graphene J. M. P. Alaboson, Q. H. Wang, J. D. Emery, A. L of graphene-based nanoelectronics requires the deposition of ultrathin and pinhole-free high-k dielectric layer deposition (ALD) of HfO2 and Al2O3 on graphene. Whereas identical ALD conditions lead

Shahriar, Selim

157

Realization of high-quality HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As by in-situ atomic-layer-deposition  

SciTech Connect

High {kappa} dielectric of HfAlO/HfO{sub 2} was an in-situ atomic-layer-deposited directly on molecular beam epitaxy grown In{sub 0.53}Ga{sub 0.47}As surface without using pre-treatments or interfacial passivation layers, where HfAlO (HfO{sub 2}:Al{sub 2}O{sub 3} {approx} 4:1) with high re-crystallization temperature was employed as the top oxide layer. The HfAlO ({approx}4.5 nm)/HfO{sub 2} (0.8 nm)/In{sub 0.53}Ga{sub 0.47}As metal oxide semiconductor capacitors have exhibited an oxide/In{sub 0.53}Ga{sub 0.47}As interface free of arsenic-related defective bonding, thermodynamic stability at 800 deg. C, and low leakage current densities of <10{sup -7} A/cm{sup 2} at {+-}1 MV/cm. The interfacial trap density (D{sub it}) spectra in absence of mid-gap peaks were obtained by temperature-dependent capacitance and conductance with D{sub it}'s of 2-3 x 10{sup 12} eV{sup -1} cm{sup -2} below and 6-12 x 10{sup 11} eV{sup -1} cm{sup -2} above the mid-gap of In{sub 0.53}Ga{sub 0.47}As, respectively. An equivalent oxide thickness of less than 1 nm has been achieved by reducing the HfAlO thickness to {approx}2.7 nm with the same initial HfO{sub 2} thickness of {approx}0.8 nm.

Lin, T. D.; Hong, M. [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Chang, Y. H. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, C. A.; Huang, M. L.; Lee, W. C. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)

2012-04-23T23:59:59.000Z

158

Structured luminescence conversion layer  

DOE Patents (OSTI)

An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern.

Berben, Dirk; Antoniadis, Homer; Jermann, Frank; Krummacher, Benjamin Claus; Von Malm, Norwin; Zachau, Martin

2012-12-11T23:59:59.000Z

159

Phase Behavior and Electrophoretic Deposition of LPEI-PAA Polyelectrolyte Complexes  

E-Print Network (OSTI)

This project aims to discover a new means of overcoming the drawbacks of traditional layer-by-layer dip coating through the use of polyelectrolyte complexes (PECs) and electrophoretic deposition. The layer-by-layer process, by which oppositely...

Davis, Ryan

2013-05-03T23:59:59.000Z

160

Environmental Performance Characterization of Atomic Layer Deposition  

E-Print Network (OSTI)

temperature can only save 3~5% of total energy consumption.all invariable, the total energy consumption, Q, is directlyLabview program. The total energy consumption of the circuit

Yuan, Chris; Dornfeld, David

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Layering Technologies  

Science Journals Connector (OSTI)

Planar technology requires that thin layers of materials be formed and patterned sequentially, commencing with a flat rigid substrate. The key aspects of each layer are its Thi...

Ivor Brodie; Julius J. Muray

1992-01-01T23:59:59.000Z

162

Chemical solution seed layer for rabits tapes  

SciTech Connect

A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.

Goyal, Amit; Paranthaman, Mariappan; Wee, Sung-Hun

2014-06-10T23:59:59.000Z

163

Calculating Deposit Formation in the Pipelining of Waxy Crude Oils  

Science Journals Connector (OSTI)

Wax deposition from a waxy crude oil is modelled in turbulent flow in a pipeline. Molecular diffusion in a thin boundary layer...

S. Correra; A. Fasano; L. Fusi; D. Merino-Garcia

2007-04-01T23:59:59.000Z

164

Chemical vapor deposition of epitaxial silicon  

DOE Patents (OSTI)

A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

Berkman, Samuel (Florham Park, NJ)

1984-01-01T23:59:59.000Z

165

Deposition Process  

NLE Websites -- All DOE Office Websites (Extended Search)

Pulsed Plasma Processing Pulsed Plasma Processing NEW: Downloadable: Invited Talk "Pulsed Metal Plasmas," presented at the 2006 AVS Meeting, San Francisco, California, November 15, 2006. (PDF, file size 8 MB). Plasma Sources for Window Coatings Deposition processes for low-emittance and solar control coatings can be improved through the use of advanced plasma technology developed at LBNL. A new type of constricted glow-discharge plasma source was selected for the 1997 R&D 100 Award. Invented by LBNL researchers Andre Anders, Mike Rubin, and Mike Dickinson, the source was designed to be compatible with industrial vacuum deposition equipment and practice. Construction is simple, rugged and inexpensive. It can operate indefinitely over a wide range of chamber pressure without any consumable parts such as filaments or grids. Several different gases including Argon, Oxygen and Nitrogen have been tested successfully.

166

Layer-by-layer assembly of electrically conductive polymer thin films  

E-Print Network (OSTI)

) to deposit layers of carbon black that are pre-stabilized with polyethylenimine (PEI) and poly(acrylic acid) (PAA) (see chemical structures in Fig. 3). The resulting films are thin, flexible, and relatively dense, with a high concentration of carbon black... within the deposition mixtures is described in Chapter III. Materials and Methods Materials Two types of polymers were used to stabilize carbon black for layer-by-layer (LbL) assembly of composite thin films. Poly(acrylic acid) (PAA...

Jan, Chien Sy Jason

2007-09-17T23:59:59.000Z

167

Method for deposition of a conductor in integrated circuits  

DOE Patents (OSTI)

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

Creighton, J. Randall (Albuquerque, NM); Dominguez, Frank (Albuquerque, NM); Johnson, A. Wayne (Albuquerque, NM); Omstead, Thomas R. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

168

Pulsed Laser Deposition | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

Pulsed Laser Deposition Pulsed Laser Deposition EMSL's pulsed laser deposition (PLD) system is designed for epitaxial growth of oxide, ceramic, or synthetic mineral thin films and...

169

Characterization of metal oxide layers grown on CVD graphene  

SciTech Connect

Growth of a fully oxidized aluminum oxide layer with low surface roughness on graphene grown by chemical vapor deposition is demonstrated. This is accomplished by the deposition of a 0.2 nm thick titanium seed layer on the graphene prior to the deposition of the aluminum under ultra high vacuum conditions, which was subsequently oxidized. The stoichiometry and surface roughness of the oxide layers were measured for a range of titanium and aluminum depositions utilizing ex situ x-ray photoelectron spectrometry and atomic force microscopy. These fully oxidized films are expected to produce good dielectric layers for use in graphene based electronic devices.

Matsubayashi, Akitomo; Abel, Joseph; Prasad Sinha, Dhiraj; Lee, Ji Ung; LaBella, Vincent P. [College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203 (United States)

2013-03-15T23:59:59.000Z

170

Scalable Manufacture of Built-to-Order Nanomedicine: Spray-Assisted Layer-by-Layer Functionalization of PRINT Nanoparticles  

E-Print Network (OSTI)

Scalable methods, PRINT particle fabrication, and spray-assisted Layer-by-Layer deposition are combined to generate uniform and functional nanotechnologies with precise control over composition, size, shape, and surface ...

Herlihy, Kevin P.

171

Superconducting structure with layers of niobium nitride and aluminum nitride  

DOE Patents (OSTI)

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

Murduck, James M. (Lisle, IL); Lepetre, Yves J. (Lauris, FR); Schuller, Ivan K. (Woodridge, IL); Ketterson, John B. (Evanston, IL)

1989-01-01T23:59:59.000Z

172

Superconducting structure with layers of niobium nitride and aluminum nitride  

DOE Patents (OSTI)

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-07-04T23:59:59.000Z

173

Boundary Layer  

NLE Websites -- All DOE Office Websites (Extended Search)

Sea Spray on the Thermodynamics of the Hurricane Boundary Layer For original submission and image(s), see ARM Research Highlights http:www.arm.govsciencehighlights Research...

174

Process for thin film deposition of cadmium sulfide  

DOE Patents (OSTI)

The present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O.sup.-2 for S.sup.-2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.

Muruska, H. Paul (East Windsor, NJ); Sansregret, Joseph L. (Scotch Plains, NJ); Young, Archie R. (Montclair, NJ)

1982-01-01T23:59:59.000Z

175

Method Of Transferring A Thin Crystalline Semiconductor Layer  

NLE Websites -- All DOE Office Websites (Extended Search)

Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure

176

Selective deposition of silicon and silicon-germanium alloys by rapid thermal chemical vapor deposition  

SciTech Connect

Selective deposition of SiGe alloys by rapid thermal deposition has been studied using a commercially available Rapid Thermal Chemical Vapor Deposition (RTCVD) cluster tool. The precursors used in this work were dichlorosilane and germane diluted in either hydrogen or argon. An initial characterization was performed to find the appropriate temperature and GeH{sub 4} flow ranges to deposit epitaxial layers with low surface roughness. For layers with higher germanium concentration lower deposition temperatures are required to minimize surface roughness. The effects of the dilutant gas on the deposition were examined. An H{sub 2} dilutant affects the deposition by consuming chlorine released by the SiCl{sub 2}H{sub 2} and forming HCl. When Ar is used as the dilutant, more chlorine is available for other reactions that can result in etching of the silicon surface. Finally, the effects of pre-deposition treatment were determined. When compared to a wet HF dip, a gas/vapor phase HF/methanol native oxide removal treatment appears to increase the initiation time for the epitaxial deposition reaction. This is most likely due to increased fluorine termination of the surface. When a wet HF or HF/methanol native oxide removal is followed by a UV-Cl{sub 2} process, the deposition reaction initiation time is reduced. The UV-Cl{sub 2} process was also found to etch silicon through the native oxide.

Grant, J.M.; Ang, M.; Allen, L.R. [Sharp Microelectronics Technology, Inc., Camas, WA (United States)

1996-12-01T23:59:59.000Z

177

Method of transferring a thin crystalline semiconductor layer  

DOE Patents (OSTI)

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Nastasi, Michael A. (Sante Fe, NM); Shao, Lin (Los Alamos, NM); Theodore, N. David (Mesa, AZ)

2006-12-26T23:59:59.000Z

178

Direct chemical vapor deposition of graphene on dielectric surfaces  

DOE Patents (OSTI)

A substrate is provided that has a metallic layer on a substrate surface of a substrate. A film made of a two dimensional (2-D) material, such as graphene, is deposited on a metallic surface of the metallic layer. The metallic layer is dewet and/or removed to provide the film on the substrate surface.

Zhang, Yuegang; Ismach, Ariel

2014-04-29T23:59:59.000Z

179

Chemical vapor deposition of boron-doped hydrogenated amorphous silicon  

SciTech Connect

Deposition conditions and film properties for a variety of boron-doped hydrogenated amorphous silicon films and silicon-carbon films produced by chemical vapor deposition (CVD) are discussed. Deposition gases include monosilane, disilane, trisilane, and acetylene. Two types of optically wide band-gap p layers are obtained. One of these window p layers (without carbon) has been extensively tested in photovoltaic devices. Remarkably, this p layer can be deposited between about 200 to 300 /sup 0/C. A typical open circuit voltage in an all CVD p-i-n device is 0.70--0.72 V, and in a hybrid device where the i and n layers are deposited by glow discharge, 0.8--0.83 V.

Ellis F.B. Jr.; Delahoy, A.E.

1985-07-15T23:59:59.000Z

180

Layer-by-layer Assembly of Nanobrick Wall Ultrathin Transparent Gas Barrier Films  

E-Print Network (OSTI)

Thin layers with high barrier to oxygen and other gases are a key component to many packaging applications, such as flexible electronics, food, and pharmaceuticals. Vapor deposited thin films provide significant gas barrier, but are prone...

Priolo, Morgan Alexander

2012-07-16T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Superconductive articles including cerium oxide layer  

DOE Patents (OSTI)

A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.

Wu, Xin D. (Greenbelt, MD); Muenchausen, Ross E. (Espanola, NM)

1993-01-01T23:59:59.000Z

182

Method for depositing high-quality microcrystalline semiconductor materials  

DOE Patents (OSTI)

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Guha, Subhendu (Bloomfield Hills, MI); Yang, Chi C. (Troy, MI); Yan, Baojie (Rochester Hills, MI)

2011-03-08T23:59:59.000Z

183

Method for making photovoltaic devices using oxygenated semiconductor thin film layers  

DOE Patents (OSTI)

A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

2014-12-16T23:59:59.000Z

184

Christmas Island lagoonal lakes, models for the deposition of carbonateevaporiteorganic laminated sediments  

E-Print Network (OSTI)

, halite) and organic layers are deposited. Observations suggest that deposition of these different laminae), followed by evaporitic minerals (carbonate, calcium sulfate, halite) when salinity increases through Laminated series displaying sequential alternations of evaporitic (anhydrite, gypsum, halite) and carbonate

Boyer, Edmond

185

Electrostatic force assisted deposition of graphene  

DOE Patents (OSTI)

An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

Liang, Xiaogan (Berkeley, CA)

2011-11-15T23:59:59.000Z

186

Vacuum deposition and curing of liquid monomers  

DOE Patents (OSTI)

The present invention is the formation of solid polymer layers under vacuum. More specifically, the present invention is the use of standard polymer layer-making equipment that is generally used in an atmospheric environment in a vacuum, and degassing the monomer material prior to injection into the vacuum. Additional layers of polymer or metal may be vacuum deposited onto solid polymer layers. Formation of polymer layers under a vacuum improves material and surface characteristics, and subsequent quality of bonding to additional layers. Further advantages include use of less to no photoinitiator for curing, faster curing, fewer impurities in the polymer electrolyte, as well as improvement in material properties including no trapped gas resulting in greater density, and reduced monomer wetting angle that facilitates spreading of the monomer and provides a smoother finished surface.

Affinito, J.D.

1993-11-09T23:59:59.000Z

187

GIS package on mineral deposits database and thematic maps of Central Eurasia  

Science Journals Connector (OSTI)

The GIS (Geographic Information System) Central Asia is composed of spatially referenced geographical, geological, geophysical, geochemical and mineral deposit thematic layers, and their respective attribute d...

R. Seltmann; V. Shatov; G. Guriev…

2005-01-01T23:59:59.000Z

188

Layer-thickness dependence of cw photoluminescence in single a-Si:H layers  

Science Journals Connector (OSTI)

Photoluminescence data are presented for ultrathin single layers of a-Si:H deposited on a-SiO2. We observe a nonmonotonic shift of the luminescence peak with layer thickness, indicating that more than one mechanism is operative. Possible sources of the opposing shifts are discussed.

B. A. Wilson; C. M. Taylor; J. P. Harbison

1986-09-15T23:59:59.000Z

189

High density Ru nanocrystal deposition for nonvolatile memory applications  

E-Print Network (OSTI)

High density Ru nanocrystal deposition for nonvolatile memory applications Damon B. Farmer School density optimizes the charge storing capability of the floating layer, while a high degree of size

190

Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interface Self-cleaning by Atomic Layer Deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As  

SciTech Connect

The Synchrotron Radiation Photoemission Spectroscopic (SRPES) study was conducted to (a) investigate the surface chemistry of In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.48}As post chemical and thermal treatments, (b) construct band diagram and (c) investigate the interface property of HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As and HfO{sub 2}/In{sub 0.52}Al{sub 0.48}As. Dilute HCl and HF etch remove native oxides on In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.47}As, whereas in-situ vacuum annealing removes surface arsenic pile-up. After the atomic layer deposition of HfO{sub 2}, native oxides were considerably reduced compared to that in as-received epi-layers, strongly suggesting the self-clean mechanism. Valence and conduction band offsets are measured to be 3.37 {+-} 0.1eV, 1.80 {+-} 0.3eV for In{sub 0.53}Ga{sub 0.47}As and 3.00 {+-} 0.1eV, 1.47 {+-} 0.3eV for In{sub 0.52}Al{sub 0.47}As, respectively.

Kobayashi, Masaharu; /SLAC, SSRL; Chen, P.T.; Sun, Y.; Goel, N.; Majhi, P.; Garner, M; Tsai, W.; Pianetta, P.; Nishi, Y.; /SLAC, SSRL

2008-10-31T23:59:59.000Z

191

Colloidal particle deposition in turbulent flow  

SciTech Connect

A theoretical analysis is presented which describes the initial deposition of monodispersed spherical colloidal particles from a steady fully developed turbulent flow onto conduit walls. When the net particle-conduit electrical interaction potential is attractive, particle deposition is shown to be often governed by turbulent hydrodynamics. When the net particle-conduit electrical interaction potential possess a repulsive maximum, particle deposition to first order is uniform and depends solely on electrical interaction effects. The developed theoretical model specialized to orifice deposition with the use of Harwell Flow3D turbulence modelling software qualitatively described the deposition of 0.5 {mu}m silica particles onto glass orifices from an aqueous suspension. The effect of the electrical double layer on the rate of colloidal particle deposition in laminar flow has been described by Spielman and Friedlander (1), Dahneke (2), Bowen et al. (3) and Bowen and Epstein (4). This article describes the extension of their work to colloidal particle deposition under steady fully developed turbulent flow conditions. This article also reports the results of orifice particle deposition experiments which were conducted to qualitatively investigate the developed theoretical model.

Morton, D.S.

1994-05-01T23:59:59.000Z

192

Back contact buffer layer for thin-film solar cells  

DOE Patents (OSTI)

A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

Compaan, Alvin D.; Plotnikov, Victor V.

2014-09-09T23:59:59.000Z

193

Deposition method for producing silicon carbide high-temperature semiconductors  

DOE Patents (OSTI)

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

1987-01-01T23:59:59.000Z

194

Sandy Depositional Systems  

Science Journals Connector (OSTI)

Why is the study of sandy depositional systems central to the understanding of sand and sandstone? From earliest times geologists have wanted to know where and under what conditions a sandstone was deposited—t...

F. J. Pettijohn; Paul Edwin Potter; Raymond Siever

1987-01-01T23:59:59.000Z

195

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2012-08-07T23:59:59.000Z

196

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2011-10-11T23:59:59.000Z

197

Low temperature junction growth using hot-wire chemical vapor deposition  

DOE Patents (OSTI)

A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

2014-02-04T23:59:59.000Z

198

Glow discharge deposition at high rates using disilane  

SciTech Connect

The research program reported makes use of the fact that amorphous silicon films can be grown faster from disilane in a glow discharge than from the traditional silane. The goal is to find a method to grow films at a high rate and with sufficiently high quality to be used in an efficient solar cell. It must also be demonstrated that the appropriate device structure can be successfully fabricated under conditions which give high deposition rates. High quality intrinsic films have been deposited at 20 A/s. Efficiency of 5.6% on steel substrates and 5.3% on glass substrates were achieved using disilane i-layers deposited at 15 A/s in a basic structure, without wide-gap doped layers or light trapping. Wide gap p-layers were deposited using disilane. Results were compared with those obtained at Vactronic using high power discharges of silane-hydrogen mixtures. (LEW)

Rajeswaran, G.; Corderman, R.R.; Kampas, F.J.; Vanier, P.E.

1985-01-01T23:59:59.000Z

199

Fast Transporting ZnO–TiO2 Coaxial Photoanodes for Dye-Sensitized Solar Cells Based on ALD-Modified SiO2 Aerogel Frameworks  

Science Journals Connector (OSTI)

To circumvent this problem, we have explored here the idea of conformally coating the silica–ZnO aerogel structures with very thin layers of more robust metal oxides such as Al2O3, ZrO2, or TiO2 to create doubly coaxial structures. ... J–V characteristics of DSSCs featuring 25 ?m thick aerogel-based SiO2–ZnO films compared to similar films with ca. 3 and 4 Å coatings of Al2O3 and TiO2, respectively: (a) light performance; (b) dark performance. ... Figure 7. Plot showing the effects of increased layers of TiO2 coats over 6 nm ZnO-coated silica aerogels with respect to charge lifetimes from OCVD measurements. ...

Vennesa O. Williams; Nak Cheon Jeong; Chaiya Prasittichai; Omar K. Farha; Michael J. Pellin; Joseph T. Hupp

2012-06-21T23:59:59.000Z

200

Sputter deposition for multi-component thin films  

DOE Patents (OSTI)

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

1990-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Sputter deposition for multi-component thin films  

DOE Patents (OSTI)

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

Krauss, A.R.; Auciello, O.

1990-05-08T23:59:59.000Z

202

Deposition of dopant impurities and pulsed energy drive-in  

DOE Patents (OSTI)

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

Wickboldt, Paul (Walnut Creek, CA); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Jose, CA); Ellingboe, Albert R. (Malahide, IE)

2008-01-01T23:59:59.000Z

203

Deposition of dopant impurities and pulsed energy drive-in  

DOE Patents (OSTI)

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

Wickboldt, Paul (Walnut Creek, CA); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Ellingboe, Albert R. (Fremont, CA)

1999-01-01T23:59:59.000Z

204

Superconductive articles including cerium oxide layer  

DOE Patents (OSTI)

A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure. 7 figures.

Wu, X.D.; Muenchausen, R.E.

1993-11-16T23:59:59.000Z

205

Method for forming a barrier layer  

SciTech Connect

Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palo Alto, CA)

2002-01-01T23:59:59.000Z

206

direct_deposit_111609  

NLE Websites -- All DOE Office Websites (Extended Search)

PROTECT YOUR BANKING INFORMATION: PROTECT YOUR BANKING INFORMATION: DO NOT complete this form until you are ready to submit it to the Payroll Department. DIRECT DEPOSIT REQUEST Directions: 1. Provide required information neatly, legibly; 2. If Checking Account Direct Deposit, include a voided check. a. DO NOT submit a deposit slip! 3. If Savings Account Direct Deposit, include a copy of savings card. 4. Sign this form; 5. Inter-office mail it to Craft Payroll at "P238." DIRECT DEPOSITION AUTHORIZATION I hereby authorize Los Alamos National Laboratory, hereinafter called The Laboratory, to initiate credit entries and, if necessary, debit entries and adjustments for any credit entries in error to my account listed on this form. If deposit is for:

207

Spores from Devonian Deposits  

Science Journals Connector (OSTI)

... IN a well-illustrated paper on "Spores from Devonian Deposits, Mimerdalen, Spitsbergen" (Norsk. Polarinstitutt Skrifter, No. 132, 1964), Jorunn Os Vigran deals with the dispersed ...

1965-06-05T23:59:59.000Z

208

EMSL - ion deposition  

NLE Websites -- All DOE Office Websites (Extended Search)

deposition en Physical Properties of Ambient and Laboratory-Generated Secondary Organic Aerosol. http:www.emsl.pnl.govemslwebpublicationsphysical-properties-ambient-and-labora...

209

EMSL - Deposition and Microfabrication  

NLE Websites -- All DOE Office Websites (Extended Search)

ion beam for nanolithography and deposition and manipulation of structures at the nano scale* Microfabrication suite for designing and etching complex patterns into varied...

210

Surface acoustic wave dust deposition monitor  

DOE Patents (OSTI)

A system is disclosed for using the attenuation of surface acoustic waves to monitor real time dust deposition rates on surfaces. The system includes a signal generator, a tone-burst generator/amplifier connected to a transmitting transducer for converting electrical signals into acoustic waves. These waves are transmitted through a path defining means adjacent to a layer of dust and then, in turn, transmitted to a receiving transducer for changing the attenuated acoustic wave to electrical signals. The signals representing the attenuated acoustic waves may be amplified and used in a means for analyzing the output signals to produce an output indicative of the dust deposition rates and/or values of dust in the layer. 8 figs.

Fasching, G.E.; Smith, N.S. Jr.

1988-02-12T23:59:59.000Z

211

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Films Thin Films PDF format (189 kb) Multi Layer Thin Films Multi Layer Thin Films Planetary Sputtering SystemsPlanetary Sputtering Systems Planetary Sputtering Systems The Thin Film laboratory within Manufacturing Science & Technology provides a variety of vapor deposition processes and facilities for cooperative research and development. Available capabilities include electron beam evaporation, sputter deposition, reactive deposition processes, atomic layer deposition (ALD) and specialized techniques such as focused ion beam induced chemical vapor deposition. Equipment can be reconfigured for prototyping or it can be dedicated to long-term research, development and manufacturing. Most sputter and evaporative deposition systems are capable of depositing multiple materials.

212

Ash & Pulverized Coal Deposition in Combustors & Gasifiers  

SciTech Connect

Further progress in achieving the objectives of the project was made in the period of January I to March 31, 1998. The direct numerical simulation of particle removal process in turbulent gas flows was completed. Variations of particle trajectories are studied. It is shown that the near wall vortices profoundly affect the particle removal process in turbulent boundary layer flows. Experimental data for transport and deposition of fibrous particles in the aerosol wind tunnel was obtained. The measured deposition velocity for irregular fibrous particles is compared with the empirical correlation and the available data for glass fibers and discussed. Additional progress on the sublayer model for evaluating the particle deposition and resuspension in turbulent flows was made.

Goodarz Ahmadi

1998-12-02T23:59:59.000Z

213

Integrated Sustainability Analysis of Atomic Layer Deposition for Microelectronics Manufacturing  

E-Print Network (OSTI)

monitoring, etc. The total energy consumption of the ALDof 42.7% of the total energy consumption; pumping duringwhich is 32.8% of total energy consumption; the electronics

Yuan, Chris Yingchun; David Dornfeld

2010-01-01T23:59:59.000Z

214

Atomic Layer Deposition for Stabilization of Silicon Anodes  

Energy.gov (U.S. Department of Energy (DOE))

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

215

Atomic Layer Deposition for Stabilization of Amorphous Silicon Anodes  

Energy.gov (U.S. Department of Energy (DOE))

2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

216

Functional Nano-Structures Using Atomic Layer Deposition  

E-Print Network (OSTI)

. For the effective operation of a solar cell with a high conversion between solar energy and electrical energy two physical processes have to be optimised: the generation of charge carriers via the absorption of incident photons; and the separation and transport... of the exciton into free charge carriers. (C) The free charge carriers are transported to the macroscopic electrodes to drive an external load. Two main figures of merit exist for excitonic solar cells: the power conversion efficiency (PCE) and the external...

Salgård Cunha, Pedro

2014-05-27T23:59:59.000Z

217

Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides  

E-Print Network (OSTI)

author. E-mail: gordon@chemistry.harvard.edu. (1) Toth, L. E. Transition Metal Carbides and Nitrides homoleptic tetrakis(dialkylamido)- metal(IV) complexes and ammonia at low substrate temperatures (150-250 °C). The precursor vapors were alternately pulsed into a heated reactor, yielding 1.15-1.20 � of metal nitride film

218

Infiltration in Unsaturated Layered Fluvial Deposits at Rio Bravo:  

Science Journals Connector (OSTI)

...meetings since 1992. We acknowledge funding from DOEs Environmental Management...fracture network at Fran Ridge, Yucca Mountain, Nevada: A photo essay and data...radioactive and hazardous waste disposal. Ann Arbor Science, Ann Arbor...

R. J. Glass; J. R. Brainard; T.-C. Jim Yeh

219

Solution deposition assembly  

DOE Patents (OSTI)

Methods and devices are provided for improved deposition systems. In one embodiment of the present invention, a deposition system is provided for use with a solution and a substrate. The system comprises of a solution deposition apparatus; at least one heating chamber, at least one assembly for holding a solution over the substrate; and a substrate curling apparatus for curling at least one edge of the substrate to define a zone capable of containing a volume of the solution over the substrate. In another embodiment of the present invention, a deposition system for use with a substrate, the system comprising a solution deposition apparatus; at heating chamber; and at least assembly for holding solution over the substrate to allow for a depth of at least about 0.5 microns to 10 mm.

Roussillon, Yann; Scholz, Jeremy H; Shelton, Addison; Green, Geoff T; Utthachoo, Piyaphant

2014-01-21T23:59:59.000Z

220

Building biomedical materials layer-by-layer  

E-Print Network (OSTI)

In this materials perspective, the promise of water based layer-by-layer (LbL) assembly as a means of generating drug-releasing surfaces for biomedical applications, from small molecule therapeutics to biologic drugs and ...

Hammond, Paula T.

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Buffer layers for REBCO films for use in superconducting devices  

SciTech Connect

A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

Goyal, Amit; Wee, Sung-Hun

2014-06-10T23:59:59.000Z

222

ThinFilms  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Films Thin Films Manufacturing Technologies The Thin Film laboratory provides a variety of vapor deposition processes and facilities for cooperative research and development. Available capabilities include electron beam evaporation, sputter deposition, reactive deposi- tion processes, atomic layer deposition (ALD) and specialized techniques such as focused ion beam induced chemical vapor deposition. Equipment can be reconfigured for prototyping, or it can be dedicated to long-term research, development and manufacturing. Most sputter and evaporative deposition systems are capable of depositing multiple materials. Deposition capabilities and expertise * Deposition of a large variety of thin film mate- rials * Multiple sputter deposition systems - Capable of depositing four materials in a

223

Fabrication of solid oxide fuel cell by electrochemical vapor deposition  

DOE Patents (OSTI)

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Brian, Riley (Willimantic, CT); Szreders, Bernard E. (Oakdale, CT)

1989-01-01T23:59:59.000Z

224

Fabrication of solid oxide fuel cell by electrochemical vapor deposition  

DOE Patents (OSTI)

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Riley, B.; Szreders, B.E.

1988-04-26T23:59:59.000Z

225

Perspectives on Deposition Velocity  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Deposition Deposition Velocity ... Going down the rabbit hole to explain that sinking feeling Brian DiNunno, Ph.D. Project Enhancement Corporation June 6 th , 2012 Discussion Framework ï‚— Development of the HSS Deposition Velocity Safety Bulletin ï‚— Broader discussion of appropriate conservatism within dispersion modeling and DOE-STD-3009 DOE-STD-3009 Dose Comparison "General discussion is provided for source term calculation and dose estimation, as well as prescriptive guidance for the latter. The intent is that calculations be based on reasonably conservative estimates of the various input parameters." - DOE-STD-3009, Appendix A.3 DOE-STD-3009 Dispersion

226

EMSL: Capabilities: Deposition and Microfabrication  

NLE Websites -- All DOE Office Websites (Extended Search)

Deposition and Microfabrication Deposition and Microfabrication Additional Information Meet the Deposition and Microfabrication Experts Related EMSL User Projects Deposition and Microfabrication Tools are Applied to all Science Themes Deposition and Microfabrication brochure Designed to augment research important to a variety of disciplines, EMSL's Deposition and Microfabrication Capability tackles serious scientific challenges from a microscopic perspective. From deposition instruments that emphasize oxide films and interfaces to a state-of-the-art microfabrication suite, EMSL has equipment to tailor surfaces, as diverse as single-crystal thin films or nanostructures, or create the microenvironments needed for direct experimentation at micron scales. Users benefit from coupling deposition and microfabrication applications

227

Electrophoretic deposition of biomaterials  

Science Journals Connector (OSTI)

...Wilson 2003). The use of citric acid as a dispersant allowed the deposition of thin...poly(lactic-co-glycolic acid) (PLGA) nanoparticles embedded...stent for local drug delivery. Polyacrylic acid was used as surfactant because...

2010-01-01T23:59:59.000Z

228

Layered solid sorbents for carbon dioxide capture  

DOE Patents (OSTI)

A solid sorbent for the capture and the transport of carbon dioxide gas is provided having at least one first layer of a positively charged material that is polyethylenimine or poly(allylamine hydrochloride), that captures at least a portion of the gas, and at least one second layer of a negatively charged material that is polystyrenesulfonate or poly(acryclic acid), that transports the gas, wherein the second layer of material is in juxtaposition to, attached to, or crosslinked with the first layer for forming at least one bilayer, and a solid substrate support having a porous surface, wherein one or more of the bilayers is/are deposited on the surface of and/or within the solid substrate. A method of preparing and using the solid sorbent is provided.

Li, Bingyun; Jiang, Bingbing; Gray, McMahan L; Fauth, Daniel J; Pennline, Henry W; Richards, George A

2014-11-18T23:59:59.000Z

229

Thick adherent dielectric films on plastic substrates and method for depositing same  

DOE Patents (OSTI)

Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 .mu.m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N.sub.2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 .mu.m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.

Wickboldt, Paul (Walnut Creek, CA); Ellingboe, Albert R. (Fremont, CA); Theiss, Steven D. (Woodbury, MN); Smith, Patrick M. (San Ramon, CA)

2002-01-01T23:59:59.000Z

230

Electrophoretic deposition of biomaterials  

Science Journals Connector (OSTI)

...hybrid treatment involving micro-arc discharge oxidation and EPD. A dual-coating...the porous TiO2 layer by micro-arc oxidation coupled with EPD has been...within porous TiO2 layer by micro-arc oxidation coupled with electrophoretic...

2010-01-01T23:59:59.000Z

231

A simplified model of thin layer static/flowing dynamics for granular materials with yield  

E-Print Network (OSTI)

/deposition processes when a layer of particles is flowing over a static layer or near the destabilization and arrestA simplified model of thin layer static/flowing dynamics for granular materials with yield, 75005 Paris, France, 4 ANGE team, INRIA, CETMEF, Lab. J.-L. Lions, Paris, France Abstract We introduce

Paris-Sud XI, Université de

232

As-deposited low-strain LPCVD (low-pressure, chemical-vapor-deposition) polysilicon  

SciTech Connect

As-deposited polysilicon films with very low residual strain (lower than 5 x 10/sup -5/) are obtained by a low-pressure, chemical-vapor-deposition (LPCVD) process. Straight polysilicon bridges 300 ..mu..m long, 1.2 ..mu..m thick, and 2 to 20 ..mu..m wide, made using this process. No buckling has been observed in any of the nearly one thousand bridges of this type made in two separate process runs. In addition, no problems of sticking between the bridges and the substrate were encountered with these structures. The polysilicon films from which the beams were fabricated were deposited by pyrolyzing silane at 605/degree/C on a phosphosilicate-glass (PSG) layer (8 wt % P). The PSG layer serves as a sacrificial layer to be subsequently etched away to free the bridge. Our research is aimed at obtaining an understanding of these relationships through consideration of the role of interfacial stresses and the kinetics of initial crystalline nucleation. The technique for producing these low-strain films is significant, however, because no high-temperature annealing steps are required to produce them. 4 refs., 4 figs.

Fan, L.S.; Muller, R.S.

1988-08-01T23:59:59.000Z

233

Vacuum arc deposition devices  

SciTech Connect

The vacuum arc is a high-current, low-voltage electrical discharge which produces a plasma consisting of vaporized and ionized electrode material. In the most common cathodic arc deposition systems, the arc concentrates at minute cathode spots on the cathode surface and the plasma is emitted as a hypersonic jet, with some degree of contamination by molten droplets [known as macroparticles (MPs)] of the cathode material. In vacuum arc deposition systems, the location and motion of the cathode spots are confined to desired surfaces by an applied magnetic field and shields around undesired surfaces. Substrates are mounted on a holder so that they intercept some portion of the plasma jet. The substrate often provides for negative bias to control the energy of depositing ions and heating or cooling to control the substrate temperature. In some systems, a magnetic field is used to guide the plasma around an obstacle which blocks the MPs. These elements are integrated with a deposition chamber, cooling, vacuum gauges and pumps, and power supplies to produce a vacuum arc deposition system.

Boxman, R.L.; Zhitomirsky, V.N. [Electrical Discharge and Plasma Laboratory, Faculty of Engineering, Tel Aviv University, P.O. Box 39040, Tel Aviv 69978 (Israel)

2006-02-15T23:59:59.000Z

234

Instrument Series: Deposition and Microfabrication  

NLE Websites -- All DOE Office Websites (Extended Search)

Deposition and Microfabrication Deposition and Microfabrication Sputter Deposition System Only available at EMSL, the Discovery ® Deposition System has been customized to be a fully automated multi-functional "hybrid" instrument with several modes for thin film processing, including multi-target sputtering, effusion cell deposition, electron beam deposition, and in-situ reflection high-energy electron diffraction (RHEED) materials characterization. Unlike most systems, the Discovery ® Deposition System's unique configuration offers operational flexibility, efficiency, and control, allowing a range of applications and materials to be processed simultaneously. Because it is software controlled, users can provide their own "recipes" and have a complete log of what happens throughout the

235

Ion bombardment in silane VHF deposition plasmas  

SciTech Connect

The measurement of mass resolved ion energy distributions at the grounded substrate in an RF glow discharge allows to determine the ion flux and the ion energy flux towards the surface of a growing hydrogenated amorphous silicon (a-Si:H) layer. This provides the means to study the influence of ions on the structural properties of a-Si:H. Here the authors focus on the {alpha}-{gamma}{prime} transition as occurs in silane-hydrogen plasmas at an RF frequency of 50 MHz and a substrate temperature of 250 C. The structural properties of the layers appear to depend on the kinetic energy of the arriving ions. This is supported by measurements of ion fluxes under other deposition conditions and by characterization of the corresponding layers. The influence of ions on the growth is discussed in terms of their flux, and the amount of delivered kinetic and potential energy to the growing film. The measurements suggest that a threshold energy of about 5 eV per deposited atom is needed for the construction of a dense amorphous silicon network.

Hamers, E.A.G.; Bezemer, J.; Meiling, H.; Van Sark, W.G.J.H.M.; Van Der Weg, W.F.

1997-07-01T23:59:59.000Z

236

Layer-By-Layer Deposition and Ordering of Low-Molecular-Weight Dye Molecules  

E-Print Network (OSTI)

) that exhibit second- harmonic generation (red 3green), with c(2) values as large as 11.3 Ã? 10Ã?9 esu, that is processes using reactive silane compounds require organic solvents and high temperatures.[5

Heflin, Randy

237

Earth's Core Hottest Layer  

NLE Websites -- All DOE Office Websites (Extended Search)

Earth's Core Hottest Layer Earth's Core Hottest Layer Name: Alfred Status: Grade: 6-8 Location: FL Country: USA Date: Spring 2011 Question: Why is the inner core the hottest layer? How is that possible? Replies: There are two factors causing the center of the Earth hotter than various layers of the Earth's. First, the more dense is the layer. The denser layer, the hotter it will be. In addition, the source of the heating is due to heat produced by nuclear decay. These substances tend to be more dense than lower dense substances. So the source of heat (temperature) is higher, the greater will be the temperature. Having said all that, the reasons are rather more complicated in the "real" Earth. If the inner layers were less dense they would rise (bubble) to the "surface" leaving the inner layers more dense and thus hotter layers.

238

Cathodic Arc Plasma Deposition  

Office of Scientific and Technical Information (OSTI)

Cathodic Arc Plasma Deposition Cathodic Arc Plasma Deposition André Anders Lawrence Berkeley National Laboratory, University of California, 1 Cyclotron Road, Mailstop 53, Berkeley, California 94720 aanders@lbl.gov Abstract Cathodic arc plasma deposition is one of oldest coatings technologies. Over the last two decades it has become the technology of choice for hard, wear resistant coatings on cutting and forming tools, corrosion resistant and decorative coatings on door knobs, shower heads, jewelry, and many other substrates. The history, basic physics of cathodic arc operation, the infamous macroparticle problem and common filter solutions are reviewed. Cathodic arc plasmas stand out due to their high degree of ionization, with important consequences for film nucleation, growth, and efficient utilization of substrate bias. The

239

A new pulsed laser deposition technique: Scanning multi-component pulsed laser deposition method  

SciTech Connect

The scanning multi-component pulsed laser deposition (PLD) method realizes uniform depositions of desired coatings by a modified pulsed laser deposition process, preferably with a femto-second laser-system. Multi-component coatings (single or multilayered) are thus deposited onto substrates via laser induced ablation of segmented targets. This is achieved via horizontal line-scanning of a focused laser beam over a uniformly moving target's surface. This process allows to deposit the desired composition of the coating simultaneously, starting from the different segments of the target and adjusting the scan line as a function of target geometry. The sequence and thickness of multilayers can easily be adjusted by target architecture and motion, enabling inter/intra layer concentration gradients and thus functional gradient coatings. This new, simple PLD method enables the achievement of uniform, large-area coatings. Case studies were performed with segmented targets containing aluminum, titanium, and niobium. Under the laser irradiation conditions applied, all three metals were uniformly ablated. The elemental composition within the rough coatings obtained was fixed by the scanned area to Ti-Al-Nb = 1:1:1. Crystalline aluminum, titanium, and niobium were found to coexist side by side at room temperature within the substrate, without alloy formation up to 600 deg. C.

Fischer, D.; Jansen, M. [Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart (Germany); Fuente, G. F. de la [Instituto de Ciencia de Materiales de Aragon (CSIC-Universidad de Zaragoza), Maria de Luna, 3, 50018 Zaragoza (Spain)

2012-04-15T23:59:59.000Z

240

Deposition of biaxially textured yttria-stabilized zirconia by ion-beam-assisted deposition.  

SciTech Connect

Biaxially textured yttria (8 mol %)-stabilized zirconia (YSZ) thin films were deposited on randomly oriented Hastelloy C and Stainless Steel 304 at room temperature as a buffer layer for subsequent deposition of oriented YBa{sub 2}Cu{sub 3}O{sub x} films. The 0.16-1.3 {micro}m thick YSZ films were deposited by e-beam evaporation at rates of 1.2-3.2 {angstrom}/sec. Biaxially textured films were produced with an Ar/O{sub 2} ion beam directed at the substrate during film growth. X-ray diffraction was used to study in-plane and out-of-plane orientation as a function of ion-bombardment angle, film thickness, ion-to-atom flux ratio, and substrate material. In-plane and out-of-plane average-misorientation angles on these YSZ films that were deposited by ion-beam-assisted deposition were as low as 17 and 5.4{degree}, respectively, on as-received substrates.

Chudzik, M. P.

1998-09-17T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Energy deposition by Alfven waves into the dayside auroral oval: Cluster and FAST observations  

E-Print Network (OSTI)

Energy deposition by Alfve´n waves into the dayside auroral oval: Cluster and FAST observations C observations from the Cluster and FAST spacecraft showing the deposition of energy into the auroral ionosphere from broadband ULF waves in the cusp and low-latitude boundary layer. A comparison of the wave Poynting

California at Berkeley, University of

242

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto  

E-Print Network (OSTI)

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto , Veronica Keywords: Schottky barrier Ambipolarity Si nanowire Stencil lithography FET Silicide a b s t r a c t We chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning

De Micheli, Giovanni

243

Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes  

DOE Patents (OSTI)

A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

Tansu, Nelson; Zhao, Hongping; Zhang, Jing; Liu, Guangyu

2014-04-01T23:59:59.000Z

244

Nanotube Fabrication byNanotube Fabrication by Anodic Aluminum Oxide,Anodic Aluminum Oxide,  

E-Print Network (OSTI)

Nanotube Fabrication byNanotube Fabrication by Anodic Aluminum Oxide,Anodic Aluminum Oxide, Self-regulating phenomena in materials science: Self-assembly of nanopores during anodic oxidation of aluminum (AAO) Self combined anodic aluminum oxide (AAO) nanostructures with atomic layer deposition (ALD) to fabricate

Rubloff, Gary W.

245

Model for reflectance anisotropy spectra of molecular layered systems  

Science Journals Connector (OSTI)

We present a theoretical study based on the local field interaction for the reflectance anisotropy spectra of organic molecular layers. Each layer is formed by an ordered two-dimensional array of polarizable organic molecules that respond to the local electric field like point-like harmonic oscillators. We concentrate on the morphological characteristics of the layers and its effect on the spectra, showing that the reorientation of the molecules from layer to layer, as the system is assembled, gives rise to a line shape of the spectra that goes from peak-like to derivative-like. Our spectra shows good qualitative agreement with experimental results of a layered system of metalloporphyrin octaesters molecules deposited onto an isotropic gold substrate by the Langmuir-Schaefer technique.

Bernardo S. Mendoza and R. A. Vázquez-Nava

2005-07-05T23:59:59.000Z

246

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire  

E-Print Network (OSTI)

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films Cedex 9, France (Dated: 15 March 2011) Uniform single layer graphene was grown on single-crystal Ir. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown

Boyer, Edmond

247

Stability of polymer-dielectric bi-layers for athermal silicon photonics  

E-Print Network (OSTI)

Temperature sensitivity of Si based rings can be nullified by the use of polymer over-cladding. Integration of athermal passive rings in an electronic-photonic architecture requires the possibility of multi-layer depositions ...

Raghunathan, Vivek

248

Organic solar cells with an ultra thin organized hole transport layer  

Science Journals Connector (OSTI)

Discotic liquid crystals (LC) are promising materials to manufacture devices for organic photovoltaic conversion. These molecules possess a mesophase ... the columns. After the deposition of an organic layer on t...

S. Archambeau; H. Bock; I. Seguy; P. Jolinat…

2007-09-01T23:59:59.000Z

249

Hybrid Thin Film Deposition System | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

Hybrid Thin Film Deposition System Hybrid Thin Film Deposition System Only available at EMSL, the Discovery Deposition System has been customized to be a fully automated...

250

Ash & Pulverized Coal Deposition in Combustors & Gasifiers  

SciTech Connect

Further progress in achieving the objectives of the project was made in the period of October I to December 31, 1997. The direct numerical simulation of particle removal process in turbulent gas flows was continued. Variations of vorticity contours which are averaged over a short time duration are studied. It is shown that the near wall vortices profoundly affect the particle removal process in turbulent boundary layer flows. The sublayer model for evaluating the particle deposition in turbulent flows was extended to include the effect of particle rebound. A new more advance flow model for the near wall vortices is also used in these analysis. Sample particle trajectories are obtained and discussed. Experimental data for transport and deposition of fibrous particles in the aerosol wind tunnel was obtained. The measured deposition velocity is compared with the empirical correlation and the available data and discussed. Particle resuspension process in turbulent flows are studied. The model is compared with the experimental data. It is shown that when the effects of the near wall flow structure, as well as the surface roughness are included the model agrees with the available experimental data.

Goodarz Ahmadi

1998-12-02T23:59:59.000Z

251

Ash & Pulverized Coal Deposition in Combustors & Gasifiers  

SciTech Connect

Further progress in achieving the objectives of the project was made in the period of July 1 to September 30, 1997. The direct numerical simulation of particle removal process in turbulent gas flows was continued. Variations of vorticity contours which are averaged over a short time duration are studied. It is shown that the near wall vortices profoundly affect the particle removal process in turbulent boundary layer flows. The sublayer model for evaluating the particle deposition in turbulent flows was extended to include the effect of particle rebound. A new more advance flow model for the near wall vortices is also used in these analysis. Sample particle trajectories are obtained and discussed. Experimental data for transport and deposition of fibrous particles in the aerosol wind tunnel was obtained. The measured deposition velocity is compared with the empirical correlation and the available data and discussed. Particle resuspension process in turbulent flows are studied. The model is compared with the experimental data. It is shown that when the effects of the near wall flow structure, as well as the surface roughness are included the model agrees with the available experimental data.

Goodarz Ahmadi

1998-12-02T23:59:59.000Z

252

Layered plasma polymer composite membranes  

DOE Patents (OSTI)

Layered plasma polymer composite fluid separation membranes are disclosed, which comprise alternating selective and permeable layers for a total of at least 2n layers, where n is [>=]2 and is the number of selective layers. 2 figs.

Babcock, W.C.

1994-10-11T23:59:59.000Z

253

High-rate deposition of hydrogenated amorphous silicon films and devices  

SciTech Connect

In high-rate deposition of a-Si:H films, the effect of deposition parameters on material properties are examined when silane and disilane are the feed gases. The emphasis is on RF glow discharge, but other deposition methods are also covered. The problems of gas-phase polymerization and power formation at high rates have been overcome by modified reactor designs. Deposition rates of 1-3 nm/s are adequate for economically fabricating the intrinsic layer. Laboratory-size a-Si:H cells with greater than 10% efficiency have been achieved with both silane and disilane at rates in the 1- to 2-nm/s range.

Luft, W.

1988-12-01T23:59:59.000Z

254

Chemical vapor deposition sciences  

SciTech Connect

Chemical vapor deposition (CVD) is a widely used method for depositing thin films of a variety of materials. Applications of CVD range from the fabrication of microelectronic devices to the deposition of protective coatings. New CVD processes are increasingly complex, with stringent requirements that make it more difficult to commercialize them in a timely fashion. However, a clear understanding of the fundamental science underlying a CVD process, as expressed through computer models, can substantially shorten the time required for reactor and process development. Research scientists at Sandia use a wide range of experimental and theoretical techniques for investigating the science of CVD. Experimental tools include optical probes for gas-phase and surface processes, a range of surface analytic techniques, molecular beam methods for gas/surface kinetics, flow visualization techniques and state-of-the-art crystal growth reactors. The theoretical strategy uses a structured approach to describe the coupled gas-phase and gas-surface chemistry, fluid dynamics, heat and mass transfer of a CVD process. The software used to describe chemical reaction mechanisms is easily adapted to codes that model a variety of reactor geometries. Carefully chosen experiments provide critical information on the chemical species, gas temperatures and flows that are necessary for model development and validation. This brochure provides basic information on Sandia`s capabilities in the physical and chemical sciences of CVD and related materials processing technologies. It contains a brief description of the major scientific and technical capabilities of the CVD staff and facilities, and a brief discussion of the approach that the staff uses to advance the scientific understanding of CVD processes.

NONE

1992-12-31T23:59:59.000Z

255

Modifications of the surface properties of metals by oxide overlayers: 1, Oxidized zirconium deposited on the Pt(100) single crystal surface  

SciTech Connect

Metallic zirconium was deposited on a single crystal Pt(100) surface by thermal evaporation in UHV conditions. The deposit was oxidized by exposure to oxygen immediately after deposition. Oxidized zirconium was found to grow on the platinum ace by the layer-by-layer mechanism. The adsorption of carbon monoxide on the surface was studied as a function of the zirconium coverage. The results show that oxidized zirconium forms a chemically inert layer which blocks the adsorptive sites of the underlying platinum substrate. The properties of the free Pt surface were unaffected by the presence of the oxidized zirconium layer.

Bardi, U.; Ross, P.N.

1986-06-01T23:59:59.000Z

256

Atmospheric Pressure Deposition for Electrochromic Windows |...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atmospheric Pressure Deposition for Electrochromic Windows Atmospheric Pressure Deposition for Electrochromic Windows Emerging Technologies Project for the 2013 Building...

257

Carbides composite surface layers produced by (PTA)  

SciTech Connect

The plasma transferred arc technique was applied to deposit a composite layer of nickel base with tungsten carbide in powder form on to surface of low alloy steel 18G2A type according to polish standard. Results showed that, plasma transferred arc hard facing process was successfully conducted by using Deloro alloy 22 plus tungsten carbide powders. Maximum hardness of 1489 HV and minimum dilution of 8.4 % were achieved by using an arc current of 60 A. However, when the current was further increased to 120 A and the dilution increases with current increase while the hardness decreases. Microstructure of the nickel base deposit with tungsten carbide features uniform distribution of reinforcement particles with regular grain shape half - dissolved in the matrix.

Tajoure, Meloud, E-mail: Tajoore2000@yahoo.com [MechanicalEng.,HIHM,Gharian (Libya); Tajouri, Ali, E-mail: Tajouri-am@yahoo.com, E-mail: dr.mokhtarphd@yahoo.com; Abuzriba, Mokhtar, E-mail: Tajouri-am@yahoo.com, E-mail: dr.mokhtarphd@yahoo.com [Materials and Metallurgical Eng., UOT, Tripoli (Libya); Akreem, Mosbah, E-mail: makreem@yahoo.com [Industrial Research Centre,Tripoli (Libya)

2013-12-16T23:59:59.000Z

258

Cleaning graphene with a titanium sacrificial layer  

SciTech Connect

Graphene is a promising material for future electronic applications and chemical vapor deposition of graphene on copper is a promising method for synthesizing graphene on the wafer scale. The processing of such graphene films into electronic devices introduces a variety of contaminants which can be difficult to remove. An approach to cleaning residues from the graphene channel is presented in which a thin layer of titanium is deposited via thermal e-beam evaporation and immediately removed. This procedure does not damage the graphene as evidenced by Raman spectroscopy, greatly enhances the electrical performance of the fabricated graphene field effect transistors, and completely removes the chemical residues from the surface of the graphene channel as evidenced by x-ray photoelectron spectroscopy.

Joiner, C. A., E-mail: cjoiner3@gatech.edu; Roy, T.; Hesabi, Z. R.; Vogel, E. M. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Chakrabarti, B. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States)

2014-06-02T23:59:59.000Z

259

Methods for improved growth of group III nitride buffer layers  

DOE Patents (OSTI)

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

2014-07-15T23:59:59.000Z

260

Multiple density layered insulator  

DOE Patents (OSTI)

A multiple density layered insulator for use with a laser is disclosed wh provides at least two different insulation materials for a laser discharge tube, where the two insulation materials have different thermoconductivities. The multiple layer insulation materials provide for improved thermoconductivity capability for improved laser operation.

Alger, Terry W. (Tracy, CA)

1994-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Layering as Optimization Decomposition 3-1 Layering as OptimizationLayering as Optimization  

E-Print Network (OSTI)

1 Layering as Optimization Decomposition 3-1 Layering as OptimizationLayering as Optimization DecompositionDecomposition Layering as Optimization Decomposition 3-2 CONTENTSCONTENTS Introduction (Marta;2 Layering as Optimization Decomposition 3-3 Layering as Optimization Decomposition Introduction By Marta

Fan, Xingzhe

262

Multiple layer insulation cover  

DOE Patents (OSTI)

A multiple layer insulation cover for preventing heat loss in, for example, a greenhouse, is disclosed. The cover is comprised of spaced layers of thin foil covered fabric separated from each other by air spaces. The spacing is accomplished by the inflation of spaced air bladders which are integrally formed in the cover and to which the layers of the cover are secured. The bladders are inflated after the cover has been deployed in its intended use to separate the layers of the foil material. The sizes of the material layers are selected to compensate for sagging across the width of the cover so that the desired spacing is uniformly maintained when the cover has been deployed. The bladders are deflated as the cover is stored thereby expediting the storage process and reducing the amount of storage space required.

Farrell, James J. (Livingston Manor, NY); Donohoe, Anthony J. (Ovid, NY)

1981-11-03T23:59:59.000Z

263

Solid particle deposition during turbulent flow production operations  

SciTech Connect

The production and transportation of petroleum fluids could be severely affected by deposition of suspended particles (i.e., asphaltene, paraffin/wax, sand, and/or diamondoid) in the production wells and/or transfer pipelines. In many instances the amount of precipitation is rather large causing complete plugging of these conduits. Therefore, it is important to understand the behavior of suspended particles during flow conditions. In this paper the authors present an analysis of the diffusional effects on the rate of solid particle deposition during turbulent flow conditions (crude oil production generally falls within this regime). The turbulent boundary layer theory and the concepts of mass transfer have been utilized to calculate the particle deposition rates on the walls of the flowing conduit. The developed model accounts for the eddy and Brownian diffusivities as well as for inertial effects. The analysis presented in this paper shows that rates of solid-particle deposition (during crude oil production) on the walls of the flowing channel due solely to diffusional effects are small. It is also shown that deposition rates decrease with increasing particle size. However, when the process is momentum controlled (large particle sizes) higher deposition rates are expected.

Escobedo, J.; Mansoori, G.A. [Univ. of Illinois, Chicago, IL (United States)

1995-12-31T23:59:59.000Z

264

Characterization of YSZ solid oxide fuel cells electrolyte deposited by atmospheric plasma spraying and low pressure plasma spraying  

Science Journals Connector (OSTI)

Yttria doped zirconia has been widely used as electrolyte materials for solid oxide fuel cells (SOFC). Plasma spraying is a cost-effective process to...2O3 stabilized ZrO2...(YSZ) layer was deposited by low press...

C. Zhang; H. L. Liao; W. Y. Li; G. Zhang; C. Coddet…

2006-12-01T23:59:59.000Z

265

Chemical vapor deposition of amorphous semiconductor films. Semiannual report, 1 May 1984-31 October 1984  

SciTech Connect

This report describes the results of research done by the Institute of Energy Conversion for the Solar Energy Research Institute in 1984 on high-efficiency, stable, amorphous silicon solar cells, fabricated by chemical vapor deposition (CVD) from disilane at high growth rates. The kinetics of CVD with higher order silanes were modelled for a tubular reactor with static substrates. A gas-phase reaction network was adopted, based on published silylene insertion and decomposition pathways. Mass balances for hydrogen and all saturated silanes through octasilane were derived. Boron-doped a-Si:H p-layers were deposited by CVD at 200/sup 0/ to 250/sup 0/C. Band gap and conductivity depended strongly on the diborane fraction in the feed gas, independent of substrate temperature. The effects of intrinsic layer deposition temperature and growth rate on material properties and device performance were studied. Cell parameters of p-i-n cells were correlated with i-layer deposition temperature and growth rate. Fill factor and short-circuit current depended on deposition conditions, while open-circuit voltage did not. Effects of diborane additions to the feed gas during i-layer deposition were studied. Experimental evidence and calculations indicate high resistance at the back contact.

Baron, B.N.; Rocheleau, R.E.; Hegedus, S.S.

1985-06-01T23:59:59.000Z

266

Fabrication of alkali halide UV photocathodes by pulsed laser deposition  

SciTech Connect

A technique has been proposed for the fabrication of atmospheric corrosion resistant alkali halide UV photocathodes by pulsed laser deposition. We produced photocathodes with a highly homogeneous photoemissive layer well-adherent to the substrate. The photocathodes were mounted in a vacuum photodiode, and a tungsten grid was used as an anode. Using pulsed UV lasers, we carried out experiments aimed at evaluating the quantum efficiency of the photocathodes. With a dc voltage applied between the photocathode and anode grid, we measured a shunt signal proportional to the total charge emitted by the cathode exposed to UV laser light. The proposed deposition technique enables one to produce photocathodes with photoemissive layers highly uniform in quantum efficiency, which is its main advantage over thin film growth by resistive evaporation. (laser technologies)

Brendel', V M; Bukin, V V; Garnov, Sergei V; Bagdasarov, V Kh; Denisov, N N; Garanin, Sergey G; Terekhin, V A; Trutnev, Yurii A

2012-12-31T23:59:59.000Z

267

Systems having optical absorption layer for mid and long wave infrared and methods for making the same  

DOE Patents (OSTI)

An optical system according to one embodiment includes a substrate; and an optical absorption layer coupled to the substrate, wherein the optical absorption layer comprises a layer of diamond-like carbon, wherein the optical absorption layer absorbs at least 50% of mid wave infrared light (3-5 .mu.m wavelength) and at least 50% of long wave infrared light (8-13 .mu.m wavelength). A method for applying an optical absorption layer to an optical system according to another embodiment includes depositing a layer of diamond-like carbon of an optical absorption layer above a substrate using plasma enhanced chemical vapor deposition, wherein the optical absorption layer absorbs at least 50% of mid wave infrared light (3-5 .mu.m wavelength) and at least 50% of long wave infrared light (8-13 .mu.m wavelength). Additional systems and methods are also presented.

Kuzmenko, Paul J

2013-10-01T23:59:59.000Z

268

Composition Control in the Direct Laser-Deposition Process R.R. UNOCIC and J.N. DuPONT  

E-Print Network (OSTI)

in the LENS system makes this feasible. Dissimilar powder materials can be placed into separate powder hoppers the composition within each layer deposit. Previous work in the closely related process of fusion welding has changes in a continuous manner from one target value to another. However, with a direct metal- deposition

DuPont, John N.

269

Graphene-based textured surface by pulsed laser deposition as a robust platform for surface enhanced Raman scattering applications  

E-Print Network (OSTI)

1 Graphene-based textured surface by pulsed laser deposition as a robust platform for surface scattering (SERS)-active substrate based on gold nanoparticles-decorated few-layer (fl) graphene grown by pulsed laser deposition. Diamond-Like Carbon film has been converted to fl-graphene after thermal

Boyer, Edmond

270

OCTOBER 1990 DEPOSITION AND REMOVAL  

E-Print Network (OSTI)

, shielding, resuspension, indoor deposition, the relative airborne con- centrations indoors and outdoors RESUSPENSION; PLANTS; RADIATION DOSE DISTRIBUTION; REMEDIAL ACTION; SHIELDING; SURFACE CONTAMINATION; URBAN effected by road traffic, and street cleaning the degree of resuspension, i.e. the return of deposited

271

Magnetism of Chinese loess deposits  

Science Journals Connector (OSTI)

......April 1984 research-article Articles Magnetism of Chinese loess deposits Friedrich Heller...astr. Soc. (1984) 77, 125-141 Magnetism of Chinese loess deposits Friedrich Heller...considerable improvement of NRM cleaning. Often Magnetism of Chinese loess LOG R h ' M A H B......

Friedrich Heller; Liu Tungsheng

1984-04-01T23:59:59.000Z

272

Ni-Pt Silicide Formation Through Ti Mediating Layers  

SciTech Connect

With Ni1-xPtxSi, the variation in queue time between the final surface cleaning and Ni-Pt deposition represents a significant manufacturability issue. A short queue time is often difficult to maintain, leading to the formation of an oxide layer on the Si substrate prior to Ni-Pt deposition that can affect the formation of Ni1-xPtxSi and its texture. In this manuscript, it will be shown that an extended queue time prior to Ni-Pt deposition leads to morphological changes in the Ni1-xPtxSi formation sequence. A layer of Ti deposited between Ni-Pt and Si reduces the native oxide and may facilitate Ni1-xPtxSi formation. With increasing Ti thickness, the presence of metal-rich phases is gradually reduced and the formation temperature of Ni1-xPtxSi increases, suggesting a direct formation of Ni1-xPtxSi from Ni-Pt. In the presence of an interfacial oxide, an increase in formation temperature is also observed with increasing Ti interlayer thickness. When the Ti layer is sufficiently thick, the phase formation sequence becomes relatively insensitive to the presence of an interfacial oxide or extended queue time.

Besser,P.; Lavoie, C.; Ozcan, A.; Murray, C.; Strane, J.; Wong, K.; Gribelyuk, M.; Wang, Y.; Parks, C.; Jordan-Sweet, J.

2007-01-01T23:59:59.000Z

273

Hydrothermal Deposition | Open Energy Information  

Open Energy Info (EERE)

Hydrothermal Deposition Hydrothermal Deposition Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Print PDF Hydrothermal Deposition Dictionary.png Hydrothermal Deposition: No definition has been provided for this term. Add a Definition Quartz veins indicate ancient fluid flow, possibly the result of a hydrothermal system (reference: http://www.nvcc.edu/home/cbentley/dc_rocks/) Tufa mounds indicate the location of extinct hot springs. In this photo they show the ancient extent of the surface manifestations at Mono Lake, CA (reference: http://news.medill.northwestern.edu/climatechange/page.aspx?id=170704)(photo by Scott Stine) Hydrothermal water carries minerals as it travels through the crust. These minerals are often deposited as pressure decreases as the fluid approaches

274

Asphaltene and other heavy-organic particle deposition during transfer and production operations  

SciTech Connect

The production and transportation of petroleum fluids could be severely affected by deposition of suspended particles (i.e. asphaltene, paraffin/wax, sand, and/or diamondoid) in the production wells and/or transfer pipelines. In many instances the amount of precipitation is rather large causing complete plugging of these conduits. Therefore, it is important to understand the behavior of suspended particles during flow conditions. In this paper we present an overview of the heavy organic deposition problem, its causes, effects and preventive techniques. We also present an analysis of the diffusional effects on the rate of solid particle deposition during turbulent flow conditions (crude oil production generally falls within this regime). We utilize the turbulent boundary layer theory and the concepts of mass transfer to explain the particle deposition rates on the walls of the flowing conduits. The developed model accounts for the Brownian and eddy diffusivities as well as for inertial effects and other forces acting acting upon the particles. The analysis presented in this paper shows that rates of particle deposition (asphaltene, paraffin/wax, sand, and/or diamondoid) on the walls of the flowing channel, due solely to diffusional effects, are negligible. It is also shown that deposition rates decrease with with increasing particle size. However, when the deposition process is momentum controlled (large particles) higher deposition rates are predicted. It is shown a decrease in deposition rates with increasing crude oil kinematic viscosity. An increase in deposition rates with increasing production rates is also observed.

Escobedo, J.; Mansoori, G.A. [Univ. of Illinois, Chicago, IL (United States)

1995-12-31T23:59:59.000Z

275

Laser techniques for studying chemical vapor deposition  

SciTech Connect

Chemical vapor deposition (CVD) is widely used to produce thin films for microelectronics, protective coatings and other materials processing applications. Despite the large number of applications, however, little is known about the fundamental chemistry and physics of most CVD processes. CVD recipes have generally been determined empirically, but as process requirements become more stringent, a more basic understanding will be needed to improve reactor design and speed process optimization. In situ measurements of the reacting gas are important steps toward gaining such an understanding, both from the standpoint of characterizing the reactor and testing models of a CVD process. Our work, a coordinated program of experimental and theoretical research in the fundamental mechanisms of CVD, illustrates the application of laser techniques to the understanding of a CVD system. We have used a number of laser-based techniques to probe CVD systems and have compared our measurements with predictions from computer models, primarily for the silane CVD system. The silane CVD model solves the two-dimensional, steady-state boundary layer equations of fluid flow coupled to 26 elementary chemical reactions describing the thermal decomposition of silane and the subsequent reactions of intermediate species that result in the deposition of a silicon film.

Ho, P.; Breiland, W.G.; Coltrin, M.E.

1990-01-01T23:59:59.000Z

276

Atomic Layer Deposition Functionalized Composite SOFC Cathode La0.6Sr0.4Fe0.8Co0.2O3-? -Gd0.2Ce0.8O1.9: Enhanced Long-Term Stability  

Science Journals Connector (OSTI)

(10, 12-16) Since the ORR activity of an AMO3 perovskite cathode is critically determined by the atomic structure (e.g., electronic configuration) and composition (e.g., cation concentration and oxygen nonstoichiometry) on the surface,(17-21) a complete coverage of the passive and insulating SrO(s) layer over the cathode surface would easily block the ORR-active sites for effective charge-transfer. ... (LSCF-6428) cathodes incorporating Ce0.8Sm0.2O1.9 cathode-electrolyte interlayers, was assessed. ... The material requirements for this particular application are discussed together with a study of some conductive oxides as candidate materials for protection layers on stainless steel substrates. ...

Yunhui Gong; Rajankumar L. Patel; Xinhua Liang; Diego Palacio; Xueyan Song; John B. Goodenough; Kevin Huang

2013-10-16T23:59:59.000Z

277

TULSA UNIVERSITY PARAFFIN DEPOSITION PROJECTS  

SciTech Connect

As oil and gas production moves to deeper and colder water, subsea multiphase production systems become critical for economic feasibility. It will also become increasingly imperative to adequately identify the conditions for paraffin precipitation and predict paraffin deposition rates to optimize the design and operation of these multiphase production systems. Although several oil companies have paraffin deposition predictive capabilities for single-phase oil flow, these predictive capabilities are not suitable for the multiphase flow conditions encountered in most flowlines and wellbores. For deepwater applications in the Gulf of Mexico, it is likely that multiphase production streams consisting of crude oil, produced water and gas will be transported in a single multiphase pipeline to minimize capital cost and complexity at the mudline. Existing single-phase (crude oil) paraffin deposition predictive tools are clearly inadequate to accurately design these pipelines because they do not account for the second and third phases, namely, produced water and gas. The objective of this program is to utilize the current test facilities at The University of Tulsa, as well as member company expertise, to accomplish the following: enhance our understanding of paraffin deposition in single and two-phase (gas-oil) flows; conduct focused experiments to better understand various aspects of deposition physics; and, utilize knowledge gained from experimental modeling studies to enhance the computer programs developed in the previous JIP for predicting paraffin deposition in single and two-phase flow environments. These refined computer models will then be tested against field data from member company pipelines. The following deliverables are scheduled during the first three projects of the program: (1) Single-Phase Studies, with three different black oils, which will yield an enhanced computer code for predicting paraffin deposition in deepwater and surface pipelines. (2) Two-Phase Studies, with a focus on heat transfer and paraffin deposition at various pipe inclinations, which will be used to enhance the paraffin deposition code for gas-liquid flow in pipes. (3) Deposition Physics and Water Impact Studies, which will address the aging process, improve our ability to characterize paraffin deposits and enhance our understanding of the role water plays in paraffin deposition in deepwater pipelines. As in the previous two studies, knowledge gained in this suite of studies will be integrated into a state-of-the-art three-phase paraffin deposition computer program.

Michael Volk; Cem Sarica

2003-10-01T23:59:59.000Z

278

Layered electrode for electrochemical cells  

DOE Patents (OSTI)

There is provided an electrode structure comprising a current collector sheet and first and second layers of electrode material. Together, the layers improve catalyst utilization and water management.

Swathirajan, Swathy (West Bloomfield, MI); Mikhail, Youssef M. (Sterling Heights, MI)

2001-01-01T23:59:59.000Z

279

Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces  

E-Print Network (OSTI)

We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition (CVD). Controlling ...

Reina, Alfonso

2009-01-01T23:59:59.000Z

280

Influence of molecular arrangement and morphology on optical spectra of oligothiophene heterostructures grown by organic molecular-beam deposition  

Science Journals Connector (OSTI)

Heterostructures of quaterthiophene and sexithiophene were grown by organic molecular beam deposition both on fused silica and on potassium acid phthalate (001) single crystals. The influence of both the substrate and the order of deposition on the sample morphology and, in turn, on their optical properties has been investigated. In particular, by changing the deposition conditions, the heterostructures have been found to grow either in an island or in a layer by layer mode. The emission spectra of the latter show the individual quaterthiophene and sexithiophene bands, while the spectra of the island samples are related to effects of the boundary between quaterthiophene and sexithiophene.

S. Tavazzi; D. Besana; A. Borghesi; F. Meinardi; A. Sassella; R. Tubino

2002-04-26T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer  

E-Print Network (OSTI)

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer NICHOLAS LICAUSI biaxially textured CdTe films were grown on biaxial CaF2 buffer layers. The CaF2 nanorods were grown by oblique angle vapor deposition and possessed a {111}h121i biaxial texture. The CdTe film was deposited

Wang, Gwo-Ching

282

Unexpected behaviour of one Pb monolayer deposited on aluminum oxide thin film grown on Ag(111)  

SciTech Connect

Using scanning tunneling microscopy (STM), Auger electron spectroscopy, and low energy electron diffraction, we have observed a surprising complete dissolution at room temperature of one lead monolayer deposited by evaporation on an aluminum oxide thin film (?0.8?nm thick) previously grown on Ag (111). We have observed the quasi-instantaneous diffusion of the lead deposit through the oxide layer to the silver/oxide interface. After the diffusion process, lead atoms form a Moiré superstructure, which is characterized by STM through the oxide layer. This unexpected behavior puts in light the very weak interaction between the aluminum oxide and the silver substrate.

Vizzini, Sébastien, E-mail: sebastien.vizzini@im2np.fr; Bertoglio, M. [IM2NP CNRS, Aix Marseille Université, F-13397 Marseille (France)] [IM2NP CNRS, Aix Marseille Université, F-13397 Marseille (France); Oughaddou, Hamid [Institut des Sciences Moléculaires d'Orsay, ISMO CNRS, Université de Paris, F-91405 Orsay, France and Deptartamento de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France)] [Institut des Sciences Moléculaires d'Orsay, ISMO CNRS, Université de Paris, F-91405 Orsay, France and Deptartamento de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France); Hoarau, J. Y.; Biberian, J. P.; Aufray, B. [CINaM CNRS, Aix Marseille Université, F-13288 Marseille (France)] [CINaM CNRS, Aix Marseille Université, F-13288 Marseille (France)

2013-12-23T23:59:59.000Z

283

Ba Deposition and Oxidation on ?-Al2O3/NiAl(100) Ultrathin Films. Part I: Anaerobic Deposition Conditions  

SciTech Connect

Room temperature Ba deposition on an oxygen terminated ?-Al2O3/NiAl(100) ultrathin film substrate under ultra high vacuum (UHV) conditions is studied using X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD) techniques. In addition, Ba oxidation by the alumina substrate at 300 K < T < 1200 K in the absence of a gas phase oxidizing agent is investigated. Our results indicate that at room temperature Ba grows in a layer by layer fashion for the first two layers and Ba is partially oxidized. Annealing at T < 700 K results in further oxidation of the Ba species whereas annealing at higher temperatures leads to loss of Ba from the surface via desorption.

Ozensoy, Emrah; Peden, Charles HF; Szanyi, Janos

2006-05-19T23:59:59.000Z

284

Other Hydrothermal Deposits | Open Energy Information  

Open Energy Info (EERE)

hydrothermal deposits dot the landscape at the Hverir Geothermal Area, Iceland. Photo by Darren Atkins User-specified field for unlisted hydrothermally deposited rock and...

285

Sol-Gel Deposited Electrochromic Coatings  

E-Print Network (OSTI)

Handbook of Inorganic Electrochromic Materials, Elsevier, .O R Y Sol-Gel Deposited Electrochromic Coatings Nilgun Ozer1600 Sol-Gel Deposited Electrochromic Coatings Nilgun Ozer

Ozer, N.

2010-01-01T23:59:59.000Z

286

Sandia National Laboratories: ion beam assisted deposition  

NLE Websites -- All DOE Office Websites (Extended Search)

ion beam assisted deposition Sandia, Los Alamos, Superconducting Technologies Inc., & Superpower: Solution Deposition Planarization On March 20, 2013, in CINT, Facilities, Grid...

287

Linked Deposit Loan Program (Kentucky)  

Energy.gov (U.S. Department of Energy (DOE))

The Linked Deposit Program provides loan financing for small businesses of up to $100,000 for up to 7 years. The State Investment Commission invests funds from the state's Abandoned Property Cash...

288

Success Story: Chrome Deposit Corporation  

Energy.gov (U.S. Department of Energy (DOE))

This case study describes how Chrome Deposit Corporation was able to reduce plant-wide energy use, minimize its environmental impact, and improve energy management practices amidst ongoing growth.

289

Fabrication of contacts for silicon solar cells including printing burn through layers  

DOE Patents (OSTI)

A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

2014-06-24T23:59:59.000Z

290

Asphalt deposition in miscible floods  

E-Print Network (OSTI)

. ACKNOWLEDGMENTS. . 22 23 8. REFERENCES. 24 9. APPENDIX. 26 LIST OF TABLES Table Page I II IV Properties of the Crude Oils Studied Average Core Properties for Different Tests Average Perrneabilities of Different Sections of Core Before and After... Displacement with Liquefied Petroleum Gas Percent Reduction in Permeability in Different Sections of Core Due to Asphalt Deposition Average Recoveries of Four Crude Oils and Increase in Swept Area due to Plugging by Asphalt Deposition 27 29 ABSTRACT...

Hasan, Syed Mir Ahmed

2012-06-07T23:59:59.000Z

291

Chemical enhancement of surface deposition  

DOE Patents (OSTI)

A method and apparatus for increasing the deposition of ions onto a surface, such as the adsorption of uranium ions on the detecting surface of a radionuclide detector. The method includes the step of exposing the surface to a complexing agent, such as a phosphate ion solution, which has an affinity for the dissolved species to be deposited on the surface. This provides, for example, enhanced sensitivity of the radionuclide detector.

Patch, Keith D. (Lexington, MA); Morgan, Dean T. (Sudbury, MA)

1997-07-29T23:59:59.000Z

292

Chemical enhancement of surface deposition  

DOE Patents (OSTI)

A method and apparatus are disclosed for increasing the deposition of ions onto a surface, such as the adsorption of uranium ions on the detecting surface of a radionuclide detector. The method includes the step of exposing the surface to a complexing agent, such as a phosphate ion solution, which has an affinity for the dissolved species to be deposited on the surface. This provides, for example, enhanced sensitivity of the radionuclide detector. 16 figs.

Patch, K.D.; Morgan, D.T.

1997-07-29T23:59:59.000Z

293

Vapor deposition of hardened niobium  

DOE Patents (OSTI)

A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

Blocher, Jr., John M. (Columbus, OH); Veigel, Neil D. (Columbus, OH); Landrigan, Richard B. (Columbus, OH)

1983-04-19T23:59:59.000Z

294

Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films  

DOE Patents (OSTI)

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

Gessert, T.A.

1999-06-01T23:59:59.000Z

295

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films  

DOE Patents (OSTI)

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

Gessert, Timothy A. (Conifer, CO)

1999-01-01T23:59:59.000Z

296

Pulsed laser deposited Si on multilayer graphene as anode material for lithium ion batteries  

Science Journals Connector (OSTI)

Pulsed laser deposition and chemical vapor deposition were used to deposit very thin silicon on multilayer graphene (MLG) on a nickel foam substrate for application as an anode material for lithium ion batteries. The as-grown material was directly fabricated into an anode without a binder and tested in a half-cell configuration. Even under stressful voltage limits that accelerate degradation the Si-MLG films displayed higher stability than Si-only electrodes. Post-cycling images of the anodes reveal the differences between the two material systems and emphasize the role of the graphene layers in improving adhesion and electrochemical stability of the Si.

Gouri Radhakrishnan; Brendan Foran; Michael V. Quinzio; Miles J. Brodie

2013-01-01T23:59:59.000Z

297

Initial Structure and Growth Dynamics of YBa2Cu3O7-? during Pulsed Laser Deposition  

Science Journals Connector (OSTI)

The initial heteroepitaxial growth of YBa2Cu3O7-? films on SrTiO3(001) substrates during pulsed laser deposition shows a growth-mode transition and a change of growth unit. The growth starts with two blocks, each two-thirds the size of the complete unit cell. The first of these blocks grows in a step-flow fashion, whereas the second grows in the layer-by-layer mode. Subsequent deposition occurs layer-by-layer of complete unit cells. These results suggest that the surface diffusion in the heteroepitaxial case is strongly influenced by the competition with formation energies, which is important for the fabrication of heteroepitaxial devices on the unit cell scale.

V. Vonk; K. J. I. Driessen; M. Huijben; G. Rijnders; D. H. A. Blank; H. Rogalla; S. Harkema; H. Graafsma

2007-11-09T23:59:59.000Z

298

Chemical Solution Derived Planarization Layers for Highly Aligned IBAD MgO Templates  

SciTech Connect

The main goal of this research is to develop a chemical solution derived planarization layer to fabricate highly aligned IBAD-MgO templates for the development of high temperature superconductor (HTS) based coated conductors. The standard IBAD-MgO template needs an additional electrochemical polishing step of the mechanically polished 50- m-thick Hastelloy C-276 substrates to ensure a flat and smooth surface for subsequent growth of multi-layer buffer architectures, which include: sputtered 80-nm Al2O3; sputtered 7-nm Y2O3; IBAD 10-nm MgO; sputtered 30-nm homo-epi MgO; and sputtered 30-nm LaMnO3 (LMO) layers. We have successfully developed a solution planarization layer that removes the electrochemical polishing step and also acts as a barrier layer. Crack-free, smooth Al2O3 layers were prepared on mechanically polished Hastelloy substrates using a chemical solution process. A nearly 10-15-nm thick Al2O3 layer was formed with each coating and the coating was repeated several times to achieve the desired film thickness with intermediate heat-treatments after each coating. The Al2O3 planarization layer significantly reduced the surface roughness of the substrate. The average surface roughness value, Ra for a starting substrate was 9-10 nm. After 8 coatings of Al2O3 layer, the Ra was reduced to 2 nm. Highly aligned IBAD-MgO layers with out-of-plane and in-plane textures comparable to the standard IBAD-MgO layers were successfully deposited on top of the solution planarization Al2O3 layers with an Y2O3 nucleation layer using a reel-to-reel ion-beam sputtering system. Both homo-epi MgO and LMO layers were subsequently deposited on the IBAD-MgO layers using rf sputtering to complete the buffer stack required for the growth of HTS films. YBa2Cu3O7- (YBCO) films with a thickness of 0.8 m deposited on these IBAD-MgO templates by pulsed laser deposition showed a high self-field critical current density, Jc of 3.04 MA/cm2 at 77 K and 6.05 MA/cm2 at 65 K. These results demonstrate that a low-cost chemical-solution-based, high-throughput Al2O3 planarization layer can remove the electro-polishing step and replace sputtered Al2O3 layers for the production of high Jc YBCO-coated conductors.

Paranthaman, Mariappan Parans [ORNL] [ORNL; Aytug, Tolga [ORNL] [ORNL; Stan, Liliana [Los Alamos National Laboratory (LANL)] [Los Alamos National Laboratory (LANL); Jia, Quanxi [Los Alamos National Laboratory (LANL)] [Los Alamos National Laboratory (LANL); Cantoni, Claudia [ORNL] [ORNL; Wee, Sung Hun [ORNL] [ORNL

2014-01-01T23:59:59.000Z

299

Layered permeable systems  

SciTech Connect

Permeability is a second rank tensor relating flow rate to pressure gradient in a porous medium. If the permeability is a constant times the identity tensor the permeable medium is isotropic; otherwise it is anisotropic. A formalism is presented for the simple calculation of the permeability tensor of a heterogeneous layered system composed of interleaved thin layers of several permeable constituent porous media in the static limit. Corresponding to any cumulative thickness {ital H} of a constituent is an element consisting of scalar {ital H} and a matrix which is {ital H} times a hybrid matrix function of permeability. The calculation of the properties of a medium equivalent to the combination of permeable constituents may then be accomplished by simple addition of the corresponding scalar/matrix elements. Subtraction of an element removes a permeable constituent, providing the means to decompose a permeable medium into many possible sets of permeable constituents, all of which have the same flow properties. A set of layers of a constituent medium in the heterogeneous layered system with permeability of the order of 1{ital h} as {ital h} {r arrow} 0, where {ital h} is that constituent's concentration, acts as a set of infinitely thin channels and is a model for a set of parallel cracks or fractures. Conversely, a set of layers of a given constituent with permeability of the order of {ital h} as {ital h} {r arrow} 0 acts as a set of parallel flow barriers and models a set of parallel, relatively impermeable, interfaces, such as shale stringers or some faults.

Schoenberg, M. (Schlumberger-Doll Research, Ridgefield, CT (US))

1991-02-01T23:59:59.000Z

300

Preparation and properties of high-deposition-rate a-Si:H films and solar cells using disilane: Annual subcontract report, 1 May 1987--30 April 1988  

SciTech Connect

This report contains results of the first year of research on producing p-i-n amorphous silicon solar cells with the intrinsic layer deposited from higher order silanes at deposition rates of 1 nm/s or more. The research was divided into three major areas: diagnostic studies of monosilane and disilane RF discharges using optical emission spectroscopy and mass spectrometry to assist in optimizing discharge conditions and gas-phase processes; parametric studies of material properties of 1-layers prepared form disilane as a function of deposition rate and other process parameters; and parametric studies of p-i-n devices with the i-layer prepared from disilane at various deposition rates. The focus during the first year was to fabricate a p-i-n solar cell with 9/percent/ AM1.5 efficiency over an area greater than 0.08 cm/sup 2/ with the i-layer deposited at 1 nm/s or more. Material properties such as the dark and AM1.5 light conductivities, optical band gap, and conductivity activation energy showed a weak dependence on deposition rate. The performance characteristics of unoptimized p-i-n solar cells with i-layers prepared from disilane were independent of the deposition rate of the i-layer. A p-i-n device was prepared at a rate close to 1 nm/s with an AM1.5 efficiency of 9/percent/. 20 refs, 26 figs, 2 tabs.

Bhat, P.K.; Chatham, H.; Madan, A.

1988-06-01T23:59:59.000Z

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301

Adhesion layer for etching of tracks in nuclear trackable materials  

DOE Patents (OSTI)

A method for forming nuclear tracks having a width on the order of 100-200 nm in nuclear trackable materials, such as polycarbonate (LEXAN) without causing delamination of the LEXAN. The method utilizes an adhesion film having a inert oxide which allows the track to be sufficiently widened to >200 nm without delamination of the nuclear trackable materials. The adhesion film may be composed of a metal such as Cr, Ni, Au, Pt, or Ti, or composed of a dielectric having a stable surface, such as silicon dioxide (SiO.sub.2), silicon nitride (SiN.sub.x), and aluminum oxide (AlO). The adhesion film can either be deposited on top of the gate metal layer, or if the properties of the adhesion film are adequate, it can be used as the gate layer. Deposition of the adhesion film is achieved by standard techniques, such as sputtering or evaporation.

Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

2001-01-01T23:59:59.000Z

302

Method for materials deposition by ablation transfer processing  

DOE Patents (OSTI)

A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs.

Weiner, Kurt H. (San Jose, CA)

1996-01-01T23:59:59.000Z

303

Ash aerosol formation from oxy-coal combustion and its relation to ash deposit chemistry  

Science Journals Connector (OSTI)

Abstract Ash aerosol and ash deposit formation during oxy-coal combustion were explored through experiments in a self-sustained 100 kW rated down-fired oxy-fuel combustor. Inlet oxidant conditions consisted of 50% inlet oxygen with CO2 (hereafter denoted as OXY50 conditions). A Berner low pressure impactor (BLPI), a scanning mobility particle sizer (SMPS), and an aerodynamic particle sizer (APS) were used to obtain size segregated ash aerosol samples and to determine the particle size distributions (PSD). A novel surface temperature controlled ash deposition probe system that allowed inside and outside deposits to be separated was used to collect the ash deposits. The ash aerosol \\{PSDs\\} given by the BLPI and those produced by SMPS/APS were consistent with each other. Data suggested that oxy-coal combustion under these conditions did not change the formation mechanisms controlling the bulk ash aerosol composition, but it did increase the formation of ultra-fine particles initially formed through metal vaporization, due to increased vaporization of silicon at the higher combustion temperature. The smaller particles contained within the deposits had higher Si and lower Na and S concentrations under OXY50 conditions than for air combustion. Moreover, the ash aerosol composition for particle sizes less than 2.4 ?m was related to the composition of the inside deposits. A higher Na in the ash aerosol resulted in higher Na in inside deposits with comparable absolute Na concentrations in both those aerosol particles and those inside deposits particles. The contribution of S and Si to the inside deposits showed that S in the vaporization modes together with Si in the ultrafine vaporization mode, contributed significantly to the composition of the inside deposits. These results provided direct evidence that prediction of the chemistry of the initial deposit layer (but not of the bulk deposits) required knowledge of the size segregated chemistry of the ash aerosol.

Zhonghua Zhan; Andrew Fry; Yanwei Zhang; Jost O.L. Wendt

2014-01-01T23:59:59.000Z

304

Potpourri of deposition and resuspension questions  

SciTech Connect

Twenty questions and answers are listed dealing with particulate deposition, resuspension, and precipitation scavenging.

Slinn, W.G.N.

1983-01-01T23:59:59.000Z

305

Growth of graphene underlayers by chemical vapor deposition  

SciTech Connect

We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa)] [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)] [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

2013-11-15T23:59:59.000Z

306

Hot-Jupiter Inflation due to Deep Energy Deposition  

E-Print Network (OSTI)

Some extrasolar giant planets in close orbits---"hot Jupiters"---exhibit larger radii than that of a passively cooling planet. The extreme irradiation $L_{\\rm eq}$ these hot Jupiters receive from their close in stars creates a thick isothermal layer in their envelopes, which slows down their convective cooling, allowing them to retain their inflated size for longer. This is yet insufficient to explain the observed sizes of the most inflated planets. Some models invoke an additional power source, deposited deep in the planet's envelope. Here we present an analytical model for the cooling of such irradiated, and internally heated gas giants. We show that a power source $L_{\\rm dep}$, deposited at an optical depth $\\tau_{\\rm dep}$, creates an exterior convective region, between optical depths $L_{\\rm eq}/L_{\\rm dep}$ and $\\tau_{\\rm dep}$, beyond which a thicker isothermal layer exists, which in extreme cases may extend to the center of the planet. This convective layer, which occurs only for $L_{\\rm dep}\\tau_{\\r...

Ginzburg, Sivan

2015-01-01T23:59:59.000Z

307

Ion transport and structure of layer-by-layer assemblies  

E-Print Network (OSTI)

Layer-by-layer (LbL) films of various architectures were examined as potential solid state electrolytes for electrochemical systems (e.g. batteries and fuel cells). The relationship between materials properties and ion ...

Lutkenhaus, Jodie Lee

2007-01-01T23:59:59.000Z

308

Ash pulverized coal deposition in combustors and gasifiers  

SciTech Connect

Further progress in achieving the objectives of the project was made in the period of April 1 to June 30, 1997. The computational modeling of particle transport, dispersion and deposition in a recirculating turbulent flows was completed. Considerable progress was also made in the direct numerical simulation of particle removal process in turbulent gas flows. It is shown that the near wall vortices profoundly affect the particle removal process in turbulent boundary layer flows. The predictions of the particle resuspension model is compared with the experimental data. It is shown that when the effects of the near wall flow structure, as well as the surface roughness are included the model agrees with the available experimental data. The sublayer model for evaluating the particle deposition in turbulent flows was extended to include the effect of particle rebound. A new more advanced flow model for the near wall vortices is also used in these analyses. Experimental data for transport and deposition of glass fibers in the aerosol wind tunnel was obtained. The measured deposition velocity is compared with the empirical correlation and the available data and discussed.

Ahmadi, G.

1997-12-31T23:59:59.000Z

309

Film properties of low temperature HfO{sub 2} grown with H{sub 2}O, O{sub 3}, or remote O{sub 2}-plasma  

SciTech Connect

A reduction of the deposition temperature is necessary for atomic layer deposition (ALD) on organic devices. HfO{sub 2} films were deposited by ALD on silicon substrates in a wide temperature range from 80 to 300?°C with tetrakis[ethylmethylamino]hafnium as metal precursor and H{sub 2}O, O{sub 3}, or an remote O{sub 2}-plasma as oxygen source. Growth rate and density were correlated to electrical properties like dielectric constant and leakage current of simple capacitor structures to evaluate the impact of different process conditions. Process optimizations were performed to reduce film imperfections visible at lower deposition temperatures. Additionally, the influence of postdeposition annealing on the structural and electrical properties was studied.

Richter, Claudia, E-mail: Claudia.Richter@namlab.com; Schenk, Tony; Schroeder, Uwe [NaMLab gGmbH, Noethnitzerstr. 64, 01187 Dresden (Germany); Mikolajick, Thomas [NaMLab gGmbH, Noethnitzerstr. 64, 01187 Dresden, Germany and Institut für Halbleiter und Mikrosystemtechnik, TU Dresden, Noethnitzerstr. 64, 01187 Dresden (Germany)

2014-01-15T23:59:59.000Z

310

TULSA UNIVERSITY PARAFFIN DEPOSITION PROJECTS  

SciTech Connect

As oil and gas production moves to deeper and colder water, subsea multiphase production systems become critical for economic feasibility. It will also become increasingly imperative to adequately identify the conditions for paraffin precipitation and predict paraffin deposition rates to optimize the design and operation of these multi-phase production systems. Although several oil companies have paraffin deposition predictive capabilities for single-phase oil flow, these predictive capabilities are not suitable for the multiphase flow conditions encountered in most flowlines and wellbores. For deepwater applications in the Gulf of Mexico, it is likely that multiphase production streams consisting of crude oil, produced water and gas will be transported in a single multiphase pipeline to minimize capital cost and complexity at the mudline. Existing single-phase (crude oil) paraffin deposition predictive tools are clearly inadequate to accurately design these pipelines, because they do not account for the second and third phases, namely, produced water and gas. The objective of this program is to utilize the current test facilities at The University of Tulsa, as well as member company expertise, to accomplish the following: enhance our understanding of paraffin deposition in single and two-phase (gas-oil) flows; conduct focused experiments to better understand various aspects of deposition physics; and, utilize knowledge gained from experimental modeling studies to enhance the computer programs developed in the previous JIP for predicting paraffin deposition in single and two-phase flow environments. These refined computer models will then be tested against field data from member company pipelines.

Cem Sarica; Michael Volk

2004-06-01T23:59:59.000Z

311

Theory of Leakage Preventing Layer  

Science Journals Connector (OSTI)

It is a brand new concept for leakage prevention layer. The practice to place HEPA filter at the terminal is improved when the theory of leakage prevention layer applies, which becomes the core of novel air distr...

Zhonglin Xu

2014-01-01T23:59:59.000Z

312

Z .Thin Solid Films 392 2001 231 235 Atmospheric pressure chemical vapor deposition of  

E-Print Network (OSTI)

of electrochromic tungsten oxide films Roy G. Gordona,U , Sean Barryb , Jeffrey T. Bartona , Randy N.R. Broomhall oxide, WO , is a coloring layer commonly used in electrochromic windows and displays. Successful: Chemical vapor deposition; Tungsten; Oxides; Electrochromism 1. Introduction Tungsten oxide is a key

313

Ionized physical vapor deposition of integrated circuit interconnects* J. Hopwood,a)  

E-Print Network (OSTI)

alloy silicide gate level and several metal-SiO2 interlayer dielectric ILD levels joined together metal layers. By the year 2007 it is predicted that logic circuits will use 6 to 7 interconnected metal physical vapor deposition I-PVD . The technique economically creates a unidirectional flux of metal which

314

High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells  

E-Print Network (OSTI)

. Figure 3-1 IV curve of a UT fabricated triple cell, showing 12.7% initial, active-area efficiency. Figure1 High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells PHASE I Annual-junction a-Si Solar Cells with Heavily Doped Thin Interface Layers at the Tunnel Junctions Section 4 High

Deng, Xunming

315

High-pressure turbine deposition in land-based gas turbines from various synfuels  

SciTech Connect

Ash deposits from four candidate power turbine synfuels were studied in an accelerated deposition test facility. The facility matches the gas temperature and velocity of modern first-stage high-pressure turbine vanes. A natural gas combustor was seeded with finely ground fuel ash particulate from four different fuels: straw, sawdust, coal, and petroleum coke. The entrained ash particles were accelerated to a combustor exit flow Mach number of 0.31 before impinging on a thermal barrier coating (TBC) target coupon at 1150{sup o}C. Postexposure analyses included surface topography, scanning electron microscopy and x-ray spectroscopy. Due to significant differences in the chemical composition of the various fuel ash samples, deposit thickness and structure vary considerably for fuel. Biomass products (e.g., sawdust and straw) are significantly less prone to deposition than coal and petcoke for the same particle loading conditions. In a test simulating one turbine operating year at a moderate particulate loading of 0.02 parts per million by weight, deposit thickness from coal and petcoke ash exceeded 1 and 2 mm, respectively. These large deposits from coal and petcoke were found to detach readily from the turbine material with thermal cycling and handling. The smaller biomass deposit samples showed greater tenacity, in adhering to the TBC surface. In all cases, corrosive elements (e.g., Na, K, V, Cl, S) were found to penetrate the TBC layer during the accelerated deposition test. Implications for the power generation goal of fuel flexibility are discussed.

Bons, J.P.; Crosby, J.; Wammack, J.E.; Bentley, B.I.; Fletcher, T.H. [Brigham Young University, Provo, UT (United States). Dept. of Mechanical Engineering

2007-01-15T23:59:59.000Z

316

Study on the wax deposition of waxy crude in pipelines and its application  

Science Journals Connector (OSTI)

An experimental loop for the wax deposition study is established; a novel method to determine the thickness of the wax deposition in the experimental loop is developed, taking into account the impact of the instant temperature decreasing of the test section wall which leads to the increasing of the viscosity of the crude oil near the pipe wall and the distortion of the flow field in the pipe. The wax deposition characteristics of the QH crude are studied using the experimental loop. For the QH crude oil, there is a peak area of the wax deposition when it is 40 °C around. And very little deposition emerges when the temperature is not only higher than the wax appearance point but also lower than the temperature of solidification. It is also proved in the lab that the shearing dispersion of the wax crystal particles plays little role in the wax deposition when the shearing rate is high. The observation of the pipe which is cut in the field shows that the laying of the wax deposition in the pipe is very clear, and the wax deposition caused by the shearing dispersion exists clearly. From the angel of the shutdown temperature drop and safely restart for the hot oil pipeline, it is concluded that there is a permissible critical thickness of the sedimentary layer for the low flow rate pipelines.

Zhang Guozhong; Liu Gang

2010-01-01T23:59:59.000Z

317

A Model for Phosphosilicate Glass Deposition via POCl3 for Control of Phosphorus Dose in Si  

SciTech Connect

Effective control of diffused phosphorus profiles in crystalline silicon requires detailed understanding of the doping process. We develop a model and analyze concentration profiles within the deposited phosphosilicate glass (PSG) for a range of POCl3 conditions. During predeposition, a PSG layer with composition nearly independent of process conditions forms. This layer is separated from Si by a thin SiO2 layer. There is also strong accumulation of P at the SiO2-Si interface. A simple linear-parabolic model cannot fully explain the kinetics of thickness and dose; while an improved model including oxygen dependence and dose saturation gives better fits to the experiments.

Chen, Renyu; Wagner, Hannes; Dastgheib-Shirazi, Amir; Kessler, Michael; Zhu, Zihua; Shutthanandan, V.; Altermatt, Pietro P.; Dunham, Scott T.

2012-12-27T23:59:59.000Z

318

Layered reactive particles with controlled geometries, energies, and reactivities, and methods for making the same  

DOE Patents (OSTI)

An energetic composite having a plurality of reactive particles each having a reactive multilayer construction formed by successively depositing reactive layers on a rod-shaped substrate having a longitudinal axis, dividing the reactive-layer-deposited rod-shaped substrate into a plurality of substantially uniform longitudinal segments, and removing the rod-shaped substrate from the longitudinal segments, so that the reactive particles have a controlled, substantially uniform, cylindrically curved or otherwise rod-contoured geometry which facilitates handling and improves its packing fraction, while the reactant multilayer construction controls the stability, reactivity and energy density of the energetic composite.

Fritz, Gregory M; Knepper, Robert Allen; Weihs, Timothy P; Gash, Alexander E; Sze, John S

2013-04-30T23:59:59.000Z

319

Digital Deposition of Ultrathin Pd Films on Well-Defined Pt(111) Electrodes via Surface-Limited Redox Replacement Reaction: An Electron Spectroscopy-Electrochemistry Study  

E-Print Network (OSTI)

In this study, ultrathin (submonolayer to eight-monolayer) Pd films were deposited one layer at a time on well-defined Pt(111) surfaces via a process known as surface-limited redox replacement reaction (SLR^3). In this digital-deposition method, one...

Hossain, Mohammad

2010-12-04T23:59:59.000Z

320

Additive manufacturing with friction welding and friction deposition processes  

Science Journals Connector (OSTI)

Most of the commercially available additive manufacturing processes that are meant for fabrication of fully dense metallic parts involve melting and solidification. Consequently, these processes suffer from a variety of metallurgical problems. Processes that can facilitate material addition in solid-state are therefore ideally suited for additive manufacturing. In this work, we explore two new solid-state processes, viz. friction welding and friction deposition, for additive manufacturing. Stainless steel samples produced using these processes showed excellent layer bonding and Z-direction tensile properties. The authors believe that these processes are uniquely capable and can offer significant benefits over existing commercial additive manufacturing processes.

J.J.S. Dilip; G.D. Janaki Ram; B.E. Stucker

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Vacuum vapor deposition gun assembly  

DOE Patents (OSTI)

A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

Zeren, Joseph D. (Boulder, CO)

1985-01-01T23:59:59.000Z

322

Interglacial Deposits at Bobbitshole, Ipswich  

Science Journals Connector (OSTI)

...Bobbitshole, Ipswich R. G. West The stratigraphy and palaeobotany...occupy a lake basin in a valley cut in the local plateau...Interglacial in north-west Europe, with which the...and clays deposited in a valley cut in boulder clay assigned...Bobbitshole, Ipswich West Richard Gilbert Author...

1957-01-01T23:59:59.000Z

323

Method to inhibit deposit formation  

SciTech Connect

A process is described for inhibiting deposit formation on the contact surfaces of structures confining heated hydrocarbon fluid which exhibits substantial fouling. The process consists of introducing into the hydrocarbon fluid at least an inhibiting amount of thiophene-containing polycondensed aromatic/naphthenic compounds of number average molecular weight (M-bar n) from 200 to 1,000.

Dickakian, G.B.

1986-10-28T23:59:59.000Z

324

Understanding Molecular Interactions within Chemically Selective Layered Polymer Assemblies  

SciTech Connect

This work focuses on two broad issues. These are (1) the molecular origin of the chemical selectivity achieved with ultrathin polymer multilayers, and (2) how the viscoelastic properties of the polymer layers are affected by exposure to solvent and analytes. These issues are inter-related, and to understand them we need to design experiments that probe both the energetic and kinetic aspects of interfacial adsorption processes. This project focuses on controling the chemical structure, thickness, morphology and sequential ordering of polymer layers bound to interfaces using maleimide-vinyl ether and closely related alternating copolymerization chemistry and efficient covalent cross-linking reactions that allow for layer-by-layer polymer deposition. This chemistry has been developed during the funding cycle of this Grant. We have measure the equilibrium constants for interactions between specific layers within the polymer interfaces and size-controlled, surface-functionalized gold nanoparticles. The ability to control both size and functionality of gold nanoparticle model analytes allows us to evaluate the average “pore size” that characterizes our polymer films. We have measured the “bulk” viscosity and shear modulus of the ultrathin polymer films as a function of solvent overlayer identity using quartz crystal microbalance complex impedance measurements. We have measured microscopic viscosity at specific locations within the layered polymer interfaces with time-resolved fluorescence lifetime and depolarization techniques. We combine polymer, cross-linking and nanoparticle synthetic expertise with a host of characterization techniques, including QCM gravimetry and complex impedance analysis, steady state and time-resolved spectroscopies.

Gary J. Blanchard

2009-06-30T23:59:59.000Z

325

Precipitation scavenging, dry deposition, and resuspension. Volume 2: dry deposition and resuspension  

SciTech Connect

Papers are presented under the headings: dry deposition of gases, dry deposition of particles, wind erosion, plutonium deposition and resuspension, air-sea exchange, tropical and polar, global scale, and future studies.

Pruppacher, H.R.; Semanin, R.G.; Slinn, W.G.N.

1983-01-01T23:59:59.000Z

326

Vapor deposition of tantalum and tantalum compounds  

SciTech Connect

Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition.

Trkula, M. [Los Alamos National Lab., NM (United States). Materials Science and Technology Div.

1996-04-01T23:59:59.000Z

327

Structural and interfacial analysis of WC92–Co8 coating deposited on titanium alloy by electrospark deposition  

Science Journals Connector (OSTI)

Electrospark deposition (ESD) is a promising process to produce hard and wear-resisting coatings on metallic substrates. In this paper, microstructure and interfacial characteristics of the WC92–Co8 coated-titanium are presented. A metallurgical bonding between the coating and substrate is obtained. The Ti element was found to distribute in WC92–Co8 at the metal pool, as well as the interface by diffusion. Some new phases were produced in the coating layer due to the chemical reaction during the ESD process. Experimental observation and thermodynamic analysis were utilized to study the mechanism of ESD.

R.J Wang; Y.Y Qian; J Liu

2004-01-01T23:59:59.000Z

328

Chemical bath deposition of cadmium sulfide on graphene-coated flexible glass substrate  

SciTech Connect

We demonstrate a flexible structure of cadmium sulfide (CdS) on graphene-coated glass substrate, where CdS was deposited by the chemical bath deposition method on defective tri-layer graphene. The defects in graphene, confirmed by micro-Raman spectroscopy, were created by a ultra-violet treatment with varying exposure time from 10 to 60?min. The number of defect sites in the graphene as a seed layer was related to the quality of the CdS thin films determined from the results from X-ray diffraction, optical transmittance, scanning electron microscopy, and room temperature micro-photoluminescence. Our film-on-substrate structure of CdS-graphene-on-glass was maintained up to a tensile strain of 0.3%, where graphene with a high failure strain was employed as a transparent conductive layer.

Seo, Won-Oh; Jung, Younghun; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 136-713 (Korea, Republic of); Kim, Jiwan [Flexible Display Research Center, Korea Electronics Technology Institute, Yatap-dong, Bundang-gu, Seongnam-si, Gyeonggi-do 463-816 (Korea, Republic of); Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2014-03-31T23:59:59.000Z

329

Effect of Ti seed layers on structure of self-organized epitaxial face-centered-cubic-Ag(001) oriented nanodots  

SciTech Connect

The influence of Ti seed layers on the structure of self-organized Ag nanodots, obtained with a Ti seed-layer-assisted thermal agglomeration method, has been investigated. The samples were grown on MgO(001) single crystal substrates by RF magnetron sputter deposition. The samples were deposited at room temperature and post-annealed at 350 °C for 4 h while maintaining the chamber vacuum conditions. The results of atomic force microscopy (AFM) observations indicated that the insertion of the Ti seed layer (0.6–5.0 nm) between the MgO substrate and Ag layer promotes the agglomeration process, forming the nanodot array. Comparisons between the AFM images revealed that the size of the Ag nanodots was increased with an increase in the Ti seed layer thickness. The atomic concentration of the film surface was confirmed by X-ray photoelectron spectroscopy (XPS). The XPS result suggested that the nanodot surface mainly consisted of Ag. Moreover, X-ray diffraction results proved that the initial deposition of the Ti seed layer (0.6–5.0 nm) onto MgO(001) prior to the Ag deposition yielded high-quality fcc-Ag(001) oriented epitaxial nanodots. The optical absorbance spectra of the fabricated Ag nanodots with various Ti seed layer thicknesses were obtained in the visible light range.

Kamiko, M.; Nose, K. [Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)] [Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Suenaga, R.; Kyuno, K. [Department of Material Science, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548 (Japan)] [Department of Material Science, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548 (Japan); Koo, J.-W.; Ha, J.-G. [Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-Dong, Nowon-Gu, Seoul 139-701 (Korea, Republic of)] [Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-Dong, Nowon-Gu, Seoul 139-701 (Korea, Republic of)

2013-12-28T23:59:59.000Z

330

Computational study of wax deposition in pipeline  

Science Journals Connector (OSTI)

Wax deposition in subsea pipelines is one of the flow assurance problems for oil and gas production. In contrast to many studies about single phase wax deposition gas-oil wax deposition studies are very limited. The wax deposition mechanism and model prediction are restricted by many factors such as hydrodynamic and thermal when multiphase flow is involved. Wax deposition modeling becomes complicated under multiphase flowing conditions. wax deposition is depended by the flow pattern. The stratified flow is one of the most common flow patterns in the actual subsea gas-oil flowing conditions. In this work numerical methods are used to study wax deposition in oil-gas stratified flow through a pipe. Based on the flow analysis about stratified flow the non-isothermal heat and mass transfer is calculated. The temperature profile of the oil and the concentration profile of wax in oil are obtained. The change of the oil-gas interface i.e. the liquid holdup throughout the pipe must be taken into the heat and mass balance. The valid wax deposition surface must be taken into the wax deposition modeling by establishing function of the liquid holdup and the wetted area by oil. The molecular diffusion is as the deposition mechanism. The increase of the wax fraction in the deposit as a function of time depends on the mass flux from the oil deposit interface into the gel and the growth of the deposit thickness depends on the difference between the mass flux from the bulk oil to the oil deposit interface and the mass flux from the interface into the deposit. In addition the growth of the wax deposit as a function of time along with the effect oil flow rate gas flow rate and the inlet temperature are discussed. The presence of gas significantly reduces the severity of wax deposition by altering the heat and mass transfer characteristics.

2013-01-01T23:59:59.000Z

331

Single-crystal nanowires grown via electron-beam-induced deposition  

SciTech Connect

Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of 3-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO)6) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this manuscript, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF6) precursor. High-resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured -tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W3O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

Klein, Kate L [ORNL; Randolph, Steven J [ORNL; Fowlkes, Jason Davidson [ORNL; Allard Jr, Lawrence Frederick [ORNL; Meyer III, Harry M [ORNL; Simpson, Michael L [ORNL; Rack, Philip D [ORNL

2008-01-01T23:59:59.000Z

332

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers  

DOE Patents (OSTI)

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

1998-05-19T23:59:59.000Z

333

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers  

DOE Patents (OSTI)

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

1998-01-01T23:59:59.000Z

334

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers  

DOE Patents (OSTI)

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

1999-01-01T23:59:59.000Z

335

Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits  

SciTech Connect

The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300/sup 0/C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO/sub 2/ interface is not clear at this point.

Clement, J. J.

1980-01-01T23:59:59.000Z

336

Optical coatings of variable refractive index and high laser-resistance from physical-vapor-deposited perfluorinated amorphous polymer  

DOE Patents (OSTI)

Variable index optical single-layers, optical multilayer, and laser-resistant coatings were made from a perfluorinated amorphous polymer material by physical vapor deposition. This was accomplished by physically vapor depositing a polymer material, such as bulk Teflon AF2400, for example, to form thin layers that have a very low refractive index (.about.1.10-1.31) and are highly transparent from the ultra-violet through the near infrared regime, and maintain the low refractive index of the bulk material. The refractive index can be varied by simply varying one process parameter, either the deposition rate or the substrate temperature. The thus forming coatings may be utilized in anti-reflectors and graded anti-reflection coatings, as well as in optical layers for laser-resistant coatings at optical wavelengths of less than about 2000 nm.

Chow, Robert (Livermore, CA); Loomis, Gary E. (Livermore, CA); Thomas, Ian M. (Livermore, CA)

1999-01-01T23:59:59.000Z

337

Optical coatings of variable refractive index and high laser-resistance from physical-vapor-deposited perfluorinated amorphous polymer  

DOE Patents (OSTI)

Variable index optical single-layers, optical multilayer, and laser-resistant coatings were made from a perfluorinated amorphous polymer material by physical vapor deposition. This was accomplished by physically vapor depositing a polymer material, such as bulk Teflon AF2400, for example, to form thin layers that have a very low refractive index (ca. 1.10--1.31) and are highly transparent from the ultra-violet through the near infrared regime, and maintain the low refractive index of the bulk material. The refractive index can be varied by simply varying one process parameter, either the deposition rate or the substrate temperature. The thus forming coatings may be utilized in anti-reflectors and graded anti-reflection coatings, as well as in optical layers for laser-resistant coatings at optical wavelengths of less than about 2000 nm. 2 figs.

Chow, R.; Loomis, G.E.; Thomas, I.M.

1999-03-16T23:59:59.000Z

338

Photocurrent Generation in Layer-By-Layer Assembled Dendrimers  

NLE Websites -- All DOE Office Websites (Extended Search)

Photocurrent Generation in Layer-By-Layer Assembled Dendrimers with Photocurrent Generation in Layer-By-Layer Assembled Dendrimers with Ruthenium Tris-bipyridine Peripheral Groups and a Viologen-like Core Manal Abi Saab, Rouba Abdel-Malak, James F. Wishart, and Tarek H. Ghaddar Langmuir 23, 10807-10815 (2007). [Find paper at ACS Publications] Abstract: The photophysical and photoelectrochemical properties of first- and second-generation dendrimers with ruthenium tris-bipyridine peripheral groups and a tri-viologen like core (Ru3V3 and Ru6V3) were investigated in solution and when embedded within assembled films. The stepwise assembly of these dendrimers on quartz and ITO surfaces utilizing the layer-by-layer approach was investigated. The amount of the assembled dendrimers was found to increase on going to the higher generation dendrimer. This dendrimer

339

Modeling deposit formation in diesel injector nozzle  

E-Print Network (OSTI)

Formation of deposit in the diesel injector nozzle affects the injection behavior and hinders performance. Under running condition, deposit precursors are washed away by the ensuing injection. However, during the cool down ...

Sudhiesh Kumar, Chintoo

2009-01-01T23:59:59.000Z

340

Resuspension of wall deposits in spray dryers  

Science Journals Connector (OSTI)

Wall deposition occurs in spray dryers when dried or partially dried particles contact and adhere to the walls during operation, thus reducing the yield of product collected. Wall deposits also present a product ...

M. J. Hanus; T. A. G. Langrish

2007-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Chemical vapor deposition of functionalized isobenzofuran polymers  

E-Print Network (OSTI)

This thesis develops a platform for deposition of polymer thin films that can be further tailored by chemical surface modification. First, we explore chemical vapor deposition of functionalized isobenzofuran films using ...

Olsson, Ylva Kristina

2007-01-01T23:59:59.000Z

342

Direct Measurement of EGR Cooler Deposit Thermal Properties for Improved Understanding of Cooler Fouling  

SciTech Connect

Exhaust gas recirculation (EGR) cooler fouling has become a significant issue for compliance with NOX emissions standards. This paper reports results of a study of fundamental aspects of EGR cooler fouling. An apparatus and procedure were developed to allow surrogate EGR cooler tubes to be exposed to diesel engine exhaust under controlled conditions. The resulting fouled tubes were removed and analyzed. Volatile and non-volatile deposit mass was measured for each tube. Thermal diffusivity of the deposited soot cake was measured by milling a window into the tube and using the Xenon flash lamp method. The heat capacity of the deposit was measured at temperatures up to 430 C and was slightly higher than graphite, presumably due to the presence of hydrocarbons. These measurements were combined to allow calculation of the deposit thermal conductivity, which was determined to be 0.041 W/mK, only ~1.5 times that of air and much lower than the 304 stainless steel tube (14.7 W/mK). The main determinant of the deposit thermal conductivity is density, which was measured to be just 2% that of the density of the primary soot particles (or 98% porous). The deposit layer thermal resistance was calculated and compared with estimates of the thermal resistance calculated from gas temperature data during the experiment. The deposit properties were also used to further analyze the temperature data collected during the experiment.

Wang, Hsin [ORNL] [ORNL; Sluder, Scott [ORNL] [ORNL; Storey, John Morse [ORNL] [ORNL

2009-01-01T23:59:59.000Z

343

Essays on Banking Crises and Deposit Insurance  

E-Print Network (OSTI)

of the deposit insurance system while the second essay studies the impact of international illiquidity on domestic banking crises. The Recent Deposit Insurance Reform in the U.S. raised the coverage limit for certain types of deposits. In chapter II, I study...

Wang, Wen-Yao

2009-05-15T23:59:59.000Z

344

Accelerated electrospark deposition and the wear behavior of coatings  

Science Journals Connector (OSTI)

Electrospark deposition (ESD) is a coating process that ... such as pulse energy, pulse frequency, and deposition time are presented. Electrospark deposition coating by the new equipment on AISI...

P. -Z. Wang; G. -S. Pan; Y. Zhou; J. -X. Qu…

1997-12-01T23:59:59.000Z

345

2003MayMFGS&T  

NLE Websites -- All DOE Office Websites (Extended Search)

3-Vol. 1 No. 3 3-Vol. 1 No. 3 Atomic Layer Deposition of Wear-Resistant Coatings for MicroElectroMechanical Devices F riction and wear are major concerns in the performance and reliability of microelectromechanical (MEMS) devices employing sliding contacts. While many tri- bological coating materials are available, most traditional surface coating processes are largely line-of-sight techniques and are unable to apply conformal coatings to the high aspect ratio (height/width) struc- tures such as gear hubs and teeth, typical of MEMS devices. We have demonstrated that thin, conformal, wear resistant coat- ings can be applied to silicon surface micromachined (SMM) structures by atomic layer deposition (ALD). ALD is a chemical vapor deposi- tion process that employs self-limit- ing surface reactions applied in a

346

Transpiring wall supercritical water oxidation reactor salt deposition studies  

SciTech Connect

Sandia National Laboratories has teamed with Foster Wheeler Development Corp. and GenCorp, Aerojet to develop and evaluate a new supercritical water oxidation reactor design using a transpiring wall liner. In the design, pure water is injected through small pores in the liner wall to form a protective boundary layer that inhibits salt deposition and corrosion, effects that interfere with system performance. The concept was tested at Sandia on a laboratory-scale transpiring wall reactor that is a 1/4 scale model of a prototype plant being designed for the Army to destroy colored smoke and dye at Pine Bluff Arsenal in Arkansas. During the tests, a single-phase pressurized solution of sodium sulfate (Na{sub 2}SO{sub 4}) was heated to supercritical conditions, causing the salt to precipitate out as a fine solid. On-line diagnostics and post-test observation allowed us to characterize reactor performance at different flow and temperature conditions. Tests with and without the protective boundary layer demonstrated that wall transpiration provides significant protection against salt deposition. Confirmation tests were run with one of the dyes that will be processed in the Pine Bluff facility. The experimental techniques, results, and conclusions are discussed.

Haroldsen, B.L.; Mills, B.E.; Ariizumi, D.Y.; Brown, B.G. [and others

1996-09-01T23:59:59.000Z

347

Political connections, bank deposits, and formal deposit insurance: Evidence from an emerging economy  

E-Print Network (OSTI)

1 Political connections, bank deposits, and formal deposit insurance: Evidence from an emerging the impact of banks' political connections on their ability to collect deposits under two different deposit, regardless of their type (state-owned or private entities), politically connected banks are able to attract

Boyer, Edmond

348

Rhodium coated mirrors deposited by magnetron sputtering for fusion applications  

SciTech Connect

Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for ITER plasma diagnostics. Any change in the mirror performance, in particular, its reflectivity, due to erosion of the surface by charge exchange neutrals or deposition of impurities will influence the quality and reliability of the detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium appears as an attractive material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 {mu}m were produced on different substrates of interest (Mo, stainless steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness and crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch tests demonstrate that adhesion properties increase with substrate hardness. Detailed optical characterizations of Rh-coated mirrors as well as results of erosion tests performed both under laboratory conditions and in the TEXTOR tokamak are presented in this paper.

Marot, L.; De Temmerman, G.; Oelhafen, P.; Covarel, G.; Litnovsky, A. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland); Laboratoire Mecanique, Materiaux et Procedes de Fabrication, 61 rue Albert Camus, Universite de Haute-Alsace, F-68093 Mulhouse Cedex (France); Institut fuer Energieforschung (Plasmaphysik), Forschungszentrum Juelich, Association EURATOM-FZJ, D 52425 Juelich (Germany)

2007-10-15T23:59:59.000Z

349

Colloidal spray method for low cost thin coating deposition  

DOE Patents (OSTI)

A dense or porous coating of material is deposited onto a substrate by forcing a colloidal suspension through an ultrasonic nebulizer and spraying a fine mist of particles in a carrier medium onto a sufficiently heated substrate. The spraying rate is essentially matched to the evaporation rate of the carrier liquid from the substrate to produce a coating that is uniformly distributed over the surface of the substrate. Following deposition to a sufficient coating thickness, a single sintering step may be used to produce a dense ceramic coating. Using this method, coatings ranging in thickness from about one to several hundred microns can be obtained. By using a plurality of compounds in the colloidal suspension, coatings of mixed composition can be obtained. By using a plurality of solutions and separate pumps and a single or multiple ultrasonic nebulizer(s), and varying the individual pumping rates and/or the concentrations of the solutions, a coating of mixed and discontinuously graded (e.g., stepped) or continuously graded layers may be obtained. This method is particularly useful for depositing ceramic coatings. Dense ceramic coating materials on porous substrates are useful in providing improved electrode performance in devices such as high power density solid oxide fuel cells. Dense ceramic coatings obtained by the invention are also useful for gas turbine blade coatings, sensors, steam electrolyzers, etc. The invention has general use in preparation of systems requiring durable and chemically resistant coatings, or coatings having other specific chemical or physical properties.

Pham, Ai-Quoc (San Jose, CA); Glass, Robert S. (Livermore, CA); Lee, Tae H. (Naperville, IL)

2002-01-01T23:59:59.000Z

350

Artificial Neural Networks Single Layer Networks Multi Layer Networks Generalization Artificial Neural Networks  

E-Print Network (OSTI)

Artificial Neural Networks Single Layer Networks Multi Layer Networks Generalization Artificial Neural Networks Artificial Neural Networks Single Layer Networks Multi Layer Networks Generalization 1 Artificial Neural Networks Properties Applications Classical Examples Biological Background 2 Single Layer

Kjellström, Hedvig

351

Experimental Measurement of Lateral Transport in the Inversion Layer of Silicon Heterojunction Solar Cells  

E-Print Network (OSTI)

]. Furthermore, the a-Si:H emitter and back surface field depositions are performed at low temperatures, which-type emitter configuration that is commonly used, the c-Si/a-Si:H heterointerface presents a valence band in the inversion layer. II. EXPERIMENTAL The experimental structure used was a SHJ emitter, in which an intrinsic a-Si:H

Atwater, Harry

352

Electronic band structure imaging of three layer twisted graphene on single crystal Cu(111)  

SciTech Connect

Few layer graphene (FLG) is grown on single crystal Cu(111) by Chemical Vapor Deposition, and the electronic valence band structure is imaged by Angle-Resolved Photo-Emission Spectroscopy. It is found that graphene essentially grows polycrystalline. Three nearly ideal Dirac cones are observed along the Cu ?{sup ¯}K{sup ¯} direction in k-space, attributed to the presence of ?4° twisted three layer graphene with negligible interlayer coupling. The number of layers and the stacking order are compatible with Raman data analysis demonstrating the complementarity of the two techniques for a more accurate characterization of FLG.

Marquez Velasco, J. [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece) [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Department of Physics, National Technical University of Athens, Athens (Greece); Kelaidis, N.; Xenogiannopoulou, E.; Tsoutsou, D.; Tsipas, P.; Speliotis, Th.; Pilatos, G.; Likodimos, V.; Falaras, P.; Dimoulas, A., E-mail: dimoulas@ims.demokritos.gr [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Raptis, Y. S. [Department of Physics, National Technical University of Athens, Athens (Greece)] [Department of Physics, National Technical University of Athens, Athens (Greece)

2013-11-18T23:59:59.000Z

353

Method of bonding an interconnection layer on an electrode of an electrochemical cell  

DOE Patents (OSTI)

An electrochemical cell containing an air electrode, contacting electrolyte and electronically conductive interconnection layer, and a fuel electrode, has the interconnection layer attached by: (A) applying a thin, closely packed, discrete layer of LaCrO[sub 3] particles, doped with an element selected from the group consisting of Ca, Sr, Co, Ba, Mg and their mixtures on a portion of the air electrode, and then (B) electrochemical vapor depositing a dense skeletal structure between and around the doped LaCrO[sub 3] particles. 2 figs.

Pal, U.B.; Isenberg, A.O.; Folser, G.R.

1992-01-14T23:59:59.000Z

354

Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication  

SciTech Connect

Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palto Alto, CA)

2002-01-01T23:59:59.000Z

355

Particle deposition in granular media: Progress report  

SciTech Connect

This paper discusses topics on particle deposition in granular media. The six topics discussed are: experimental determination of initial collection efficiency in granular beds - an assessment of the effect of instrument sensitivity and the extent of particle bounce-off; deposition of polydispersed aerosols in granular media; in situ observation of aerosol deposition in a two-dimensional model filter; solid velocity in cross-flow granular moving bed; aerosol deposition in granular moving bed; and aerosol deposition in a magnetically stabilized fluidized bed. (LSP)

Tien, Chi

1987-01-01T23:59:59.000Z

356

Sensitivity Analysis of Gas Production from Class 2 and Class 3 Hydrate Deposits  

SciTech Connect

Gas hydrates are solid crystalline compounds in which gas molecules are lodged within the lattices of an ice-like crystalline solid. The vast quantities of hydrocarbon gases trapped in hydrate formations in the permafrost and in deep ocean sediments may constitute a new and promising energy source. Class 2 hydrate deposits are characterized by a Hydrate-Bearing Layer (HBL) that is underlain by a saturated zone of mobile water. Class 3 hydrate deposits are characterized by an isolated Hydrate-Bearing Layer (HBL) that is not in contact with any hydrate-free zone of mobile fluids. Both classes of deposits have been shown to be good candidates for exploitation in earlier studies of gas production via vertical well designs - in this study we extend the analysis to include systems with varying porosity, anisotropy, well spacing, and the presence of permeable boundaries. For Class 2 deposits, the results show that production rate and efficiency depend strongly on formation porosity, have a mild dependence on formation anisotropy, and that tighter well spacing produces gas at higher rates over shorter time periods. For Class 3 deposits, production rates and efficiency also depend significantly on formation porosity, are impacted negatively by anisotropy, and production rates may be larger, over longer times, for well configurations that use a greater well spacing. Finally, we performed preliminary calculations to assess a worst-case scenario for permeable system boundaries, and found that the efficiency of depressurization-based production strategies are compromised by migration of fluids from outside the system.

Reagan, Matthew; Moridis, George; Zhang, Keni

2008-05-01T23:59:59.000Z

357

Preparation and properties of high deposition a-Si:H films and solar cells using disilane: Final subcontract report, 1 May 1988--30 April 1989  

SciTech Connect

The focus of research during the second phase of SERI Contract No. ZB-7-06002-1 was the fabrication of high efficiency amorphous silicon p-i-n solar cells using intrinsic layers deposited at high deposition rate (/minus/2 nm/s) from disilane discharges. In order to achieve this goal, we utilized higher discharge excitation frequencies (10-110 MRz) to improve the intrinsic layer properties. In this report, we discuss the influence of the driving frequency at fixed fr power density on silane and disilane discharges, the properties of materials deposited from these discharges, and the performance of p-i-n devices fabricated using intrinsic layers deposited at a rate of /minus/2 nm/s from disilane 110 MRz discharges. The use of higher excitation frequency in disilane discharges increases the deposition rate and results in films with improved properties compared with those deposited at similar deposition rate by increasing the rf power. As a result of these improvements, we have fabricated a p-i-n device at a deposition rate of 2nm/s with an AM1.5 efficiency of 9/7% over an area of 1 cm/sup 2/. This result exceeds the goals of this contract. 24 refs., 16 figs., 2 tabs.

Chatham, H.; Bhat, P.K.

1989-09-01T23:59:59.000Z

358

(STARC), (), (NEC), () 1st. Layer 2nd. Layer 3rd. Layer  

E-Print Network (OSTI)

, , , , , , (STARC), (), (NEC), () PG401 Program BPA RB SB BPA RB SB BPA RB SB BPA RB SB BPA RB SB BPA RB SB BPA RB SB 1st. Layer 2nd. Layer 3rd. Layer Total System BPA BPA 1 BPA 3 BPA2 BPA 4 BPA 5 BPA 6 RB 7 RB15 BPA 8 BPA 9 BPA 10 RB 11 BPA 12 BPA 13 RB 14 RB END RB RB BPA RB Data

Kasahara, Hironori

359

Magnetic properties of layered antiferromagnets  

Science Journals Connector (OSTI)

Magnetic properties of layered antiferromagnets have been studied using correlated effective field (CEF) theory developed by M. E. Lines. This theory goes beyond mean-field theory and correctly reproduces the experimental results. The theory is used here to interpret the magnetic order parameter and the susceptibilities of the FePS3 compound, which is a layered antiferromagnet with a marked Ising anisotropy.

Ibha Chatterjee

1995-02-01T23:59:59.000Z

360

Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane  

Science Journals Connector (OSTI)

Amorphous silicon layers have been deposited by low pressure chemical vapour deposition at 450°C using disilane as the only source gas. Simple inverted staggered thin-film transistors were made with thermal silicon dioxide as the gate insulator. Field-effect mobilities for electrons and holes were 1.4 cm2/V s and 0.1 cm2/V s, respectively. In order to obtain these high mobilities the transistor structures were carefully annealed in a hydrogen-radical rich ambient.

Paul A. Breddels; Hiroshi Kanoh; Osamu Sugiura; Masakiyo Matsumura

1990-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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361

Pulsed electrospark deposition of MAX phase Cr2AlC based coatings on titanium alloy  

Science Journals Connector (OSTI)

Abstract Coatings with a high amount of MAX phase were obtained onto Ti substrate using the pulsed electrospark deposition (PED) technique and Cr2AlC electrode material (??). The structure and phase formation of the coatings generated at different modes were studied. It was found, that a layer of titanium carbide was formed during the initial stage of the deposition at the interface as a result of chemical reaction between Cr2AlC electrode and Ti substrate which further acts as a diffusion barrier.

E.I. Zamulaeva; E.A. Levashov; T.A. Sviridova; N.V. Shvyndina; M.I. Petrzhik

2013-01-01T23:59:59.000Z

362

Direct laser powder deposition - 'State of the Art'  

SciTech Connect

Recent developments on Laser Cladding and Rapid Prototyping have led to Solid Freeform Fabrication (SFF) technologies that produce net shape metal components by laser fusion of metal powder alloys. These processes are known by various names such as Directed Light Fabrication (DLF{trademark}), Laser Engineered Net Shaping (LENS{trademark}), and Direct Metal Deposition (DMD{trademark}) to name a few. These types of processes can be referred to as direct laser powder deposition (DLPD). DLPD involves fusing metal alloy powders in the focal point of a laser (or lasers) that is (are) being controlled by Computer Aided Design-Computer Aided Manufacturing (CAD-CAM) technology. DLPD technology has the capability to produce fully dense components with little need for subsequent processing. Research and development of DLPD is being conducted throughout the world. The list of facilities conducting work in this area continues to grow (over 25 identified in North America alone). Selective Laser Sintering (SLS{trademark}) is another type of SFF technology based on laser fusion of powder. The SLS technology was developed as a rapid prototyping technique, whereas DLPD is an extension of the laser cladding technology. Most of the effort in SLS has been directed towards plastics and ceramics. In SLS, the powder is pre-placed by rolling out a layer for each laser pass. The computer control selects where in the layer the powder will be sintered by the laser. Sequential layers are sintered similarly forming a shape. In DLPD, powder is fed directly into a molten metal pool formed at the focal point of the laser where it is melted. As the laser moves on the material it rapidly resolidifies to form a shape. This talk elaborates on the state of these developments.

Sears, J.W.

1999-11-01T23:59:59.000Z

363

DOE Workshop - Deposition Velocity Status  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Delivering DOE's Vision for the Delivering DOE's Vision for the East Tennessee Technology Park Mission Safely Delivering the Department of Energy's Vision for the East Tennessee Technology Park Mission DOE Workshop Deposition Velocity Status Mike Hitchler, Manager Nuclear Facility Safety June 5, 2012 Safely Delivering DOE's Vision for the East Tennessee Technology Park Mission Existing UCOR Analyses * UCOR facilities at East Tennessee Technology Park (ETTP) and Oak Ridge National Laboratory (ORNL) use various plume models depending on when they were developed and by whom. - Some use MACCS or MACCS2 for dispersion evaluation. (~5 locations) - LLLW uses ingestion modeling (multiple locations)

364

2 - Products Using Vacuum Deposited Coatings  

Science Journals Connector (OSTI)

Publisher Summary Most of the vacuum coating done is thin metal coating for packaging applications covering many aspects of packaging. The metal coatings can be bright and highly reflective providing more advertising impact than metallic inks, which are duller. The metalized polymer webs can be used directly by heat sealing, laminated to other webs, or have the metallic layer transferred onto other surfaces by a stamping process. These and other variations make the aluminized film very versatile as a packaging material. The more important feature of the metal coating is that it provides a barrier performance against oxygen, water, and light. The barrier performance of the metal thin film depends on the thickness of the coating and the cleanliness of the coating. The use of lacquers or transparent colored inks enables metalized papers to be overprinted and used to make more reflective printed products than can be achieved by metallic inks. Many of these applications of metalized paper are purely esthetic. Holograms are bright, usually reflective, patterns or images that are used as decorative packaging and/or as security devices. Where holograms are used for packaging, they can be in the form of a small area integrated into the pack design or as a patterned background to the whole pack. This chapter provides examples of a large variety of products that make use of vacuum deposited coatings onto flexible substrates. Some of these may not be obvious to the users. The products range from flexible packaging, capacitors, pyrotechnics, flake fillers for paints and inks, holographic devices, transparent conducting coatings, thin film batteries, electronic circuits through to the current high market growth products such as displays, photovoltaics (solar cells), and high barrier coatings.

Charles A. Bishop

2011-01-01T23:59:59.000Z

365

Marine gas hydrates in thin sand layers that soak up microbial methane  

Science Journals Connector (OSTI)

At Site U1325 (IODP Exp. 311, Cascadia margin), gas hydrates occupy 20–60% of pore space in thin sand layers (hydrate. This is a common occurrence in gas hydrate-bearing marine sequences, and it has been related to the inhibition of hydrate formation in the small pores of fine-grained sediments. This paper applies a mass balance model to gas hydrate formation in a stack of alternating fine- and coarse-grained sediment layers. The only source of methane considered is in situ microbial conversion of a small amount of organic carbon (gas hydrates in the fine-grained layers. Methane generated in these layers is transported by diffusion into the coarse-grained layers where it forms concentrated gas hydrate deposits. The vertical distribution and amount of gas hydrate observed at Site U1325 can be explained by in situ microbial methane generation, and a deep methane source is not necessary.

Alberto Malinverno

2010-01-01T23:59:59.000Z

366

Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface  

SciTech Connect

Cu atoms deposited on a zero layer graphene grown on a SiC(0001) substrate, intercalate between the zero layer graphene and the SiC substrate after the thermal annealing above 600?°C, forming a Cu-intercalated single layer graphene. On the Cu-intercalated single layer graphene, a graphene lattice with superstructure due to moiré pattern is observed by scanning tunneling microscopy, and specific linear dispersion at the K{sup ¯} point as well as a characteristic peak in a C{sub 1s} core level spectrum, which is originated from a free-standing graphene, is confirmed by photoemission spectroscopy. The Cu-intercalated single layer graphene is found to be n-doped.

Yagyu, Kazuma; Tochihara, Hiroshi; Tomokage, Hajime; Suzuki, Takayuki [Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180 (Japan); Tajiri, Takayuki; Kohno, Atsushi [Department of Applied Physics, Fukuoka University, Fukuoka 814-0180 (Japan); Takahashi, Kazutoshi [Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)

2014-02-03T23:59:59.000Z

367

A photoemission study of Au, Ge, and O{sub 2} deposition on NH{sub 4}F etched Si(111)  

SciTech Connect

We have studied the interaction of a metal, Au, a semiconductor, Ge, and a non-metal, O{sub 2}, with the NH{sub 4}F etched Si(111) surface with photoemission spectroscopy. Two components were present in Si 2p core level spectra from the H-terminated surface. We observed the flat band condition from the as-etched, n-type, Si(111) surface. We performed stepwise depositions of Au and measured the band bending with photoemission spectroscopy. The Fermi level pinned near mid-gap as Au was deposited onto the as-etched surface. After the deposition of 1 ML of Au, a Au-silicide layer formed. This interfacial component indicated that the passivating H layer was compromised. As the Au coverage was increased, layers of pure Au formed between the bulk silicon and the Au-silicide layer. The observed behavior was nearly identical to that of Au deposition on the Si(111) 7 {times} 7 surface. Next, we tested the ability of the monohydride layer to sustain surfactant assisted growth of Ge. Ge islanding was observed at 400{degree}C indicating that good surfactant growth was not obtained. Although the monohydride layer was not a good surfactant for the Si(111) surface at this temperature, further study at different temperatures is needed to determine the ability of the ideal monohydride layer to act as a surfactant. Finally, we observed no oxidation of the as-etched surface at room temperature upon exposure to molecular oxygen.

Terry, J.; Cao, R.; Wigren, C.; Pianetta, P.

1994-03-01T23:59:59.000Z

368

CLM prescribes all solar absorption to occur in the top-most snow layer. However, our SNow, ICe, and Aerosol Radiative model  

E-Print Network (OSTI)

CLM prescribes all solar absorption to occur in the top-most snow layer. However, our SNow, ICe at the surface and strong thermal insulation by the snow. Thus energy deposition beneath the surface layer can. Albedo decrease over the Tibetan Plateau indicates less snow cover, caused by sub-surface melt and ice

Zender, Charles

369

Multi-Layer Inkjet Printed Contacts to Si  

SciTech Connect

Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 deg C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 deg C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.

Curtis, C. J.; van Hest, M.; Miedaner, A.; Kaydanova, T.; Smith, L.; Ginley, D. S.

2005-11-01T23:59:59.000Z

370

Nanoengineering Catalyst Supports via Layer-by Layer Surface Functionalization  

SciTech Connect

Recent progress in the layer-by-layer surface modification of oxides for the preparation of highly active and stable gold nanocatalysts is briefly reviewed. Through a layer-by-layer surface modification approach, the surfaces of various catalyst supports including both porous and nonporous silica materials and TiO{sub 2} nanoparticles were modified with monolayers or multilayers of distinct metal oxide ultra-thin films. The surface-modified materials were used as supports for Au nanoparticles, resulting in highly active nanocatalysts for low-temperature CO oxidation. Good stability against sintering under high-temperature treatment was achieved for a number of the Au catalysts through surface modification of the support material. The surface modification of supports can be a viable route to control both the composition and structure of support and nanoparticle interfaces, thereby tailoring the stability and activity of the supported catalyst systems.

Yan, Wenfu [ORNL; Mahurin, Shannon Mark [ORNL; Overbury, Steven {Steve} H [ORNL; Dai, Sheng [ORNL

2006-01-01T23:59:59.000Z

371

Effects of temperature and particle size on deposition in land based turbines - article no. 051503  

SciTech Connect

Four series of tests were performed in an accelerated deposition test facility to study the independent effects of particle size, gas temperature, and metal temperature on ash deposits from two candidate power turbine synfuels (coal and petcoke). The facility matches the gas temperature and velocity of modern first stage high pressure turbine vanes while accelerating the deposition process. Particle size was found to have a significant effect on capture efficiency with larger particles causing significant thermal barrier coating (TBC) spallation during a 4 h accelerated test. In the second series of tests, particle deposition rate was found to decrease with decreasing gas temperature. The threshold gas temperature for deposition was approximately 960{sup o}C. In the third and fourth test series, impingement cooling was applied to the back side of the target coupon to simulate internal vane cooling. Capture efficiency was reduced with increasing mass flow of coolant air; however, at low levels of cooling, the deposits attached more tenaciously to the TBC layer. Postexposure analyses of the third test series (scanning electron microscopy and X-ray spectroscopy) show decreasing TBC damage with increased cooling levels.

Crosby, J.M.; Lewis, S.; Bons, J.P.; Ai, W.G.; Fletcher, T.H. [Brigham Young University, Provo, UT (United States). Dept. for Mechanical Engineering

2008-09-15T23:59:59.000Z

372

Modeling particle deposition on HVAC heat exchangers  

SciTech Connect

Fouling of fin-and-tube heat exchangers by particle deposition leads to diminished effectiveness in supplying ventilation and air conditioning. This paper explores mechanisms that cause particle deposition on heat exchanger surfaces. We present a model that accounts for impaction, diffusion, gravitational settling, and turbulence. Simulation results suggest that some submicron particles deposit in the heat exchanger core, but do not cause significant performance impacts. Particles between 1 and 10 {micro}m deposit with probabilities ranging from 1-20% with fin edge impaction representing the dominant mechanism. Particles larger than 10 {micro}m deposit by impaction on refrigerant tubes, gravitational settling on fin corrugations, and mechanisms associated with turbulent airflow. The model results agree reasonably well with experimental data, but the deposition of larger particles at high velocities is underpredicted. Geometric factors, such as discontinuities in the fins, are hypothesized to be responsible for the discrepancy.

Siegel, J.A.; Nazaroff, W.W.

2002-01-01T23:59:59.000Z

373

Layer-By-Layer Assembled Hybrid Film of Carbon Nanotubes/Iron...  

NLE Websites -- All DOE Office Websites (Extended Search)

By-Layer Assembled Hybrid Film of Carbon NanotubesIron Oxide Nanocrystals for Reagentless Electrochemical Detection of Layer-By-Layer Assembled Hybrid Film of Carbon Nanotubes...

374

X-ray mirrors on flexible polymer substrates fabricated by atomic layer deposition  

E-Print Network (OSTI)

, WF6, and disilane, Si2H6. Silicon from Si2H6 serves as a sacrificial species on the surface to reduce

George, Steven M.

375

Molecular Hydrogen bubbles formation on thin vacuum deposited Aluminum layers after proton irradiation  

E-Print Network (OSTI)

Metals are the most common materials used in space technology. Metal structures, while used in space, are subjected to the full spectrum of the electromagnetic radiation together with particle irradiation. Hence, they undergo degradation. Future space missions are planned to proceed in the interplanetary space, where the protons of the solar wind play a very destructive role on metallic surfaces. Unfortunately, their real degradation behavior is to a great extent unknown. Our aim is to predict materials' behavior in such a destructive environment. Therefore both, theoretical and experimental studies are performed at the German Aerospace Center (DLR) in Bremen, Germany. Here, we report the theoretical results of those studies. We examine the process of H2-bubble formation on metallic surfaces. H2-bubbles are metal caps filled with Hydrogen molecular gas resulting from recombination processes of the metal free electrons and the solar protons. A thermodynamic model of the bubble growth is presented. Our model pr...

Sznajder, Maciej

2014-01-01T23:59:59.000Z

376

Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma  

E-Print Network (OSTI)

by Fourier transform infrared and ellipsometry. Optical emission spectroscopy and Langmuir probe were used The procedure to fabricate suspended structures is shown in Fig. 1. In the first step, the p-type 100 Si-Si dry etching was performed to define the suspended structure area. As in the previous etching pro- cess

Technische Universiteit Delft

377

Reduction of magnetostatic interactions in self-organized arrays of nickel nanowires using atomic layer deposition  

E-Print Network (OSTI)

-organized nanoporous templates obtained by anodization2 (possibly long-ranged ordered thanks to an initial step and optimized for many years4,5 . A bot- tleneck of this approach is that although anodization pro- cesses may after anodization6 , which is consistent with models of de- magnetizing coefficients7 . On the contrary

Boyer, Edmond

378

Novel Processing to Produce Polymer/Ceramic Nanocomposites by Atomic Layer Deposition  

E-Print Network (OSTI)

- scale ceramic inclusions within a polymer matrix was demon- strated. Micron-sized high density scale, but ceramics are not homogeneously dispersed in the polymer matrix at a nanoscopic level7 of this novel technique, the mechanical and barrier properties of this kind of polymer/ceramic nano- composite

George, Steven M.

379

Rapid Silica Atomic Layer Deposition on Large Quantities of Cohesive Nanoparticles  

Science Journals Connector (OSTI)

Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309, TEM Laboratory, University of New Mexico, Albuquerque, New Mexico 87131 ... As determined by energy dispersive spectrometry (EDS) elemental nanoanalysis, the films were mainly composed of silicon and aluminum (Figure S2, see the Supporting Information). ... Dynamic agglomerates partially break apart and reform because of constant solids recirculation and gas flow through the bed of particles. ...

Xinhua Liang; Kathryn S. Barrett; Ying-Bing Jiang; Alan W. Weimer

2010-07-21T23:59:59.000Z

380

Selective Chemical Vapor Deposition of Manganese Self-Aligned Capping Layer for Cu Interconnections  

E-Print Network (OSTI)

could not be broken apart. This Mn-enhanced binding strength of Cu to insulators is observed for all and nitrides. An adhesive tape is usually sufficient to remove copper films from these surfaces. Quantitative reliability because cobalt on the dielectric can increase leakage and lower the breakdown voltage.4 Cobalt

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

YBCO Films and YSZ Buffer Layers Grown in Situ on Silicon by Pulsed Laser Deposition  

Science Journals Connector (OSTI)

Attempts to grow high quality YBCO (Y1Ba2Cu3O7??...) films on bare silicon substrates have been hindered by substrate-film reactions, which are substantial even at growth temperatures as low as 550 C (Fenner et a...

D. K. Fork; G. A. N. Connell; D. B. Fenner…

1990-01-01T23:59:59.000Z

382

Orderly Deposition of Uncontaminated Graphene - Energy Innovation...  

NLE Websites -- All DOE Office Websites (Extended Search)

Orderly Deposition of Uncontaminated Graphene Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing SummaryXiaogan Liang of Berkeley Lab has...

383

Paraffin deposition in offshore oil production.  

E-Print Network (OSTI)

??The extreme environmental conditions typically encountered in offshore oil operations lead to a number of problems. Cool deep sea temperatures promote particle formation and deposition… (more)

Elphingstone, Gerald Mason

2012-01-01T23:59:59.000Z

384

Predicting particle selection by deposit feeders  

Science Journals Connector (OSTI)

Jul 15, 1977 ... Abstract. A feeding model for a generalized, benthic deposit feeder is derived from a filter- ... study was supported by Energy and Research De-.

2000-01-08T23:59:59.000Z

385

Wet and dry deposition of Chernobyl releases  

Science Journals Connector (OSTI)

... (refs 16-18). An analysis of the available monitoring data indicates that the product wrf{ for deposition of 131I and 137Cs

M. J. Clark; F. B. Smith

1988-03-17T23:59:59.000Z

386

Method and apparatus for the evaluation of a depth profile of thermo-mechanical properties of layered and graded materials and coatings  

DOE Patents (OSTI)

A technique for determining properties such as Young`s modulus, coefficient of thermal expansion, and residual stress of individual layers within a multi-layered sample is presented. The technique involves preparation of a series of samples, each including one additional layer relative to the preceding sample. By comparison of each sample to a preceding sample, properties of the topmost layer can be determined, and residual stress at any depth in each sample, resulting from deposition of the top layer, can be determined. 11 figs.

Finot, M.; Kesler, O.; Suresh, S.

1998-12-08T23:59:59.000Z

387

Optical characteristics of pulsed laser deposited Ge-Sb-Te thin films studied by spectroscopic ellipsometry  

SciTech Connect

Pulsed laser deposition technique was used for the fabrication of (GeTe){sub 1-x}(Sb{sub 2}Te{sub 3}){sub x} (x = 0, 0.33, 0.50, 0.66, and 1) amorphous thin films. Scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (rocksaltlike) layers. In order to extract optical functions of the films, the Cody-Lorentz model was applied for the analysis of ellipsometric data. Fitted sets of Cody-Lorentz model parameters are discussed in relation with chemical composition and the structure of the layers. The GeTe component content was found to be responsible for the huge optical functions and thickness changes upon amorphous-to-fcc phase transition.

Nemec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Prikryl, J.; Frumar, M. [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Nazabal, V. [Equipe Verres et Ceramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Universite de Rennes 1, 35042 Rennes Cedex (France)

2011-04-01T23:59:59.000Z

388

Carbon transport in the bottom boundary layer. Final report  

SciTech Connect

This report summarizes the activities and findings from a field experiment devised to estimate the rates and mechanisms of transport of carbon across the continental shelves. The specific site chosen for the experiment was the mid-Atlantic Bight, a region off the North Carolina coast. The experiment involved a large contingent of scientists from many institutions. The specific component of the program was the transport of carbon in the bottom boundary layer. The postulate mechanisms of transport of carbon in the bottom boundary layer are: resuspension and advection, downward deposition, and accumulation. The high turbulence levels in the bottom boundary layer require the understanding of the coupling between turbulence and bottom sediments. The specific issues addressed in the work reported here were: (a) What is the sediment response to forcing by currents and waves? (b) What is the turbulence climate in the bottom boundary layer at this site? and (c) What is the rate at which settling leads to carbon sequestering in bottom sediments at offshore sites?

Agrawal, Y.C.

1998-10-05T23:59:59.000Z

389

Improved blue response and efficiency of A-Si:H solar cells deposited from disilane using a dual-chamber plasma system  

SciTech Connect

Thin film amorphous silicon solar cells with glass/SnO/sub 2//p/i/n/Al structures and 6 to 7% AM1 conversion efficiencies were fabricated at rapid deposition rates in a newly constructed dual-chamber glow discharge deposition system. The 500 nm thick intrinsic layer was deposited at the rate of 1.7 nm/s using disilane (Si/sub 2/H/sub 6/)-helium mixtures. This deposition rate is an order of magnitude greater than conventional high efficiency amorphous silicon solar cell depositions. Residual boron doping effects at the p/i interface can severely degrade cell performance particularly when the intrinsic layer is deposited in one chamber of the dual-chamber system and the intrinsic layer is deposited in the other chamber that is free of boron contaminants. Parameters such as electrode spacing, Si/sub 2/H/sub 6/ partial pressure and flow rate were optimized to produce uniform deposition over large areas. At the substrate temperature T/sub s/ selected for solar cell intrinsic layer deposition, the spin density was measured to be a minimum at 5 x 10/sup 15//cm/sup 3/. For a given T/sub s/, an intrinsic layer deposited from Si/sub 2/H/sub 6/ absorbs fewer photons and can generate less current under solar simulation than a similar film produced from monosilane. Identical solar cells were deposited in either the single-chamber mode or the dual-chamber mode for comparison. Single-chamber mode cells perform poorly over the visible wavelengths and hence produce low short circuit currents. The dual-chamber mode cells show a significant improvement in blue response and a factor of two increase in short circuit current over the single-chamber mode cells. Under short circuit conditions, 15 mA/cm/sup 2/ was generated from rapidly deposited (1.7 nm/s) cells from disilane and 18 mA/cm/sup 2/ from low deposition rate (0.18 nm/s) monosilane cells. These values are comparable to or better than those reported for similar cells by other groups.

Rajeswaran, G.; Vanier, P.E.; Corderman, R.R.; Kampas, F.J.

1985-01-01T23:59:59.000Z

390

Growth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from `silacycllobutane  

E-Print Network (OSTI)

, and TPS resulted in single crystal layer" on Si ( 111) only up to a thickness of 2000 h;. Highly orientedGrowth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from grown by SCB at a temperature of 800 "C. The progress of SiC/Si heterojunction devices has been C3HsSiH2

Steckl, Andrew J.

391

Highly oriented polycrystalline Cu{sub 2}O film formation using RF magnetron sputtering deposition for solar cells  

SciTech Connect

Room temperature sputtering deposition and re-crystallization of the deposited thin films by rapid thermal annealing have been evaluating in detail as a formation method of Cu{sub 2}O active layer for solar cells, which minimize thermal budget in fabrication processes. Single phase polycrystalline Cu{sub 2}O films were obtained by a magnetron rf sputtering deposition and its crystallinity and electrical characteristics were controlled by the annealing. Hall mobility was improved up to 17 cm{sup 2}V{sup ?1}s{sup ?1} by the annealing at 600°C for 30s. Since this value was smaller than 47 cm{sup 2}V{sup ?1}s{sup ?1} of the film deposited under thermal equilibrium state using pulsed laser deposition at 600°C, some contrivances were necessary to compensate the deficiency. It was understood that the sputter-deposited Cu{sub 2}O films on (111)-oriented Pt films were strongly oriented to (111) face also by the self-assembly and the crystallinity was improved by the annealing preserving its orientation. The sputter-deposited film quality was expected to become equivalent to the pulsed laser deposition film from the results of X-ray diffractometry and photoluminescence.

Noda, S.; Shima, H.; Akinaga, H. [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Central 2, Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

2014-02-20T23:59:59.000Z

392

Melanin as an active layer in biosensors  

SciTech Connect

The development of pH sensors is of great interest due to its extensive application in several areas such as industrial processes, biochemistry and particularly medical diagnostics. In this study, the pH sensing properties of an extended gate field effect transistor (EGFET) based on melanin thin films as active layer are investigated and the physical mechanisms related to the device operation are discussed. Thin films were produced from different melanin precursors on indium tin oxide (ITO) and gold substrates and were investigated by Atomic Force Microscopy and Electrochemical Impedance Spectroscopy. Experiments were performed in the pH range from 2 to 12. EGFETs with melanin deposited on ITO and on gold substrates showed sensitivities ranging from 31.3 mV/pH to 48.9 mV/pH, depending on the melanin precursor and the substrate used. The pH detection is associated with specific binding sites in its structure, hydroxyl groups and quinone imine.

Piacenti da Silva, Marina, E-mail: marinaness@yahoo.com; Congiu, Mirko, E-mail: congiumat@gmail.com; Oliveira Graeff, Carlos Frederico de, E-mail: graeff@fc.unesp.br [Department of Physics, Faculty of Sciences - UNESP, Bauru, SP (Brazil); Fernandes, Jéssica Colnaghi, E-mail: jeziga-cf@yahoo.com.br; Biziak de Figueiredo, Natália, E-mail: natbiziak@yahoo.com.br; Mulato, Marcelo, E-mail: mmulato@ffclrp.usp.br [Department of Physics, Faculty of Philosophy, Science and Letters at Ribeirão Preto, University of São Paulo, Ribeirão Preto, SP (Brazil)] [Department of Physics, Faculty of Philosophy, Science and Letters at Ribeirão Preto, University of São Paulo, Ribeirão Preto, SP (Brazil)

2014-03-15T23:59:59.000Z

393

Hole in the ozone layer?  

NLE Websites -- All DOE Office Websites (Extended Search)

Hole in the ozone layer? Hole in the ozone layer? Name: Kelley Location: N/A Country: N/A Date: N/A Question: Is there really a hole in the ozone layer? Replies: That depends on what one means by a "hole". There is a thinning of the layer that is particularly severe during certain seasons at the poles. But the ozone layer is thinning most everywhere. The thinning around the south pole of earth is particularly stunning, and has been referred to as a hole even though some ozone still exists there, it is much less concentrated. As you may know, this ozone destruction is probably due to human release of pollutants such as clorofluorocarbons (CFCs) an due to natural sources such as chemicals from volcanic eruptions. CFCs are used is cooling systems such as refrigerators and air conditioning. There is an international agreement to phase out the use of these destructive chemicals but they won't be banned entirely for years for fears of losing money. Meanwhile the ozone layer thins and we are exposed to increasingly higher doses of cancer causing radiation

394

Magnetohydrodynamic boundary layer control system  

SciTech Connect

Accordingly, it is an object of the present invention to provide an active boundary layer control system which is lightweight, operates with low in put power, and occupies little physical space. It is a further object of the invention to provide a boundary layer control system which is robust and can be operated in a damaged condition without creating a hazard to the vehicle. It is yet object of the invention to provide a magnetohydrodynamic (MHD) boundary layer control system for marine vehicles which provides a force directly on the water adjacent to the vehicle hull to provide flow separation control. The invention is a boundary layer control system using magnetic and electric fields interaction to providea driving force to energize boundary layer flow around a marine vehicle. A plurality of magnets are located circumferentially around the hull. Seawater electrodes are placed between each of the magnets and between the poles of each magnet. The resulting interaction of the electric and magnetic fields produces a Lorentz force which reduces the turbulence and may even relaminarize the flow in the boundary layer.

Meng, J.C.

1993-02-11T23:59:59.000Z

395

Studies of Discharge Parameters Influence on the IPD Plasma Deposition Process  

SciTech Connect

The paper presents recent studies of a current sheet dynamics influence on the surface engineering process of impulse plasma deposition (IPD). During the IPD process plasma is generated in the working gas due to a high-voltage high-current oscillating pulse discharge, ignited within an interelectrode region of a coaxial accelerator. The changes of plasma dynamics and generation mechanisms, e.g. the electric arc instead of the plasma sheet formation during the consecutive half-periods of discharge, cause the different deposition efficiency for accelerator with the outer electrode system composed of stainless steel rods instead of standard tubular one. The coating efficiency and deposited layer quality have been examined for the titanium nitride as the model material for surface engineering.

Rabinski, Marek [Department of Plasma Physics and Technology, Institute for Nuclear Studies, 05-400 Otwock-Swierk (Poland); Zdunek, Krzysztof [Faculty of Materials Science, Warsaw University of Technology, Woloska 141, 02-507 Warsaw (Poland)

2006-01-15T23:59:59.000Z

396

Pulsed Laser Deposition of Photoresponsive Two-Dimensional GaSe Nanosheet Networks  

SciTech Connect

Here we explore pulsed laser deposition (PLD), a well known and versatile synthesis method principally used for epitaxial oxide thin film growth, for the synthesis of functional metal chalcogenide (GaSe) nanosheet networks by stoichiometric transfer of laser vaporized material from bulk GaSe targets in Ar background gas. Uniform coverage of interconnected, crystalline, few-layer, photoresponsive GaSe nanosheets in both in-plane and out-of-plane orientations were achieved under different ablation plume conditions over ~1.5 cm2 areas. Plume propagation was characterized by in situ ICCD-imaging. High (1 Torr) Ar background gas pressures were found to be crucial for the stoichiometric growth of GaSe nanosheet networks. Individual 1-3 layer GaSe triangular nanosheets of ~ 200 nm domain size were formed within 30 laser pulses, coalescing to form nanosheet networks in as few as 100 laser pulses. The thickness of the deposited networks increased linearly with pulse number, adding layers in a two-dimensional (2D) growth mode while maintaining a surface roughness of 2 GaSe layers for increasing overall thickness. Field effect transistors using these interconnected crystalline GaSe networks showed p-type semiconducting characteristics with mobilities reaching as high as 0.1 cm2V-1s-1. Spectrally-resolved photoresponsivities and external quantum efficiencies ranged from 0.4 AW-1 and 100% at 700 nm, to 1.4 AW-1 and 600 % at 240 nm, respectively. Pulsed laser deposition under these conditions appears to provide a versatile and rapid approach to stoichiometrically transfer and deposit photoresponsive networks of 2D nanosheets with digital thickness control and substrate-scale uniformity for a variety of applications.

Mahjouri-Samani, Masoud [ORNL; Gresback, Ryan G [ORNL; Tian, Mengkun [ORNL; Puretzky, Alexander A [ORNL; Rouleau, Christopher M [ORNL; Eres, Gyula [ORNL; Ivanov, Ilia N [ORNL; Xiao, Kai [ORNL; McGuire, Michael A [ORNL; Duscher, Gerd [University of Tennessee, Knoxville (UTK); Geohegan, David B [ORNL

2014-01-01T23:59:59.000Z

397

Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride, carbide and carbonitride  

DOE Patents (OSTI)

A composite material having high hardness comprises a carbon nitrogen compound, such as CN.sub.x where x is greater than 0.1 and up to 1.33, deposited on a metal or metal compound selected to promote deposition of substantially crystalline CN.sub.x. The carbon nitrogen compound is deposited on a crystal plane of the metal or metal compound sufficiently lattice-matched with a crystal plane of the carbon nitrogen compound that the carbon nitrogen compound is substantially crystalline. A plurality of layers of the compounds can be formed in alternating sequence to provide a multi-layered, superlattice coating having a coating hardness in the range of 45-55 GPa, which corresponds to the hardness of a BN coating and approaches that of a diamond coating.

Wong, Ming-Show (Northbrook, IL); Li, Dong (Evanston, IL); Chung, Yip-Wah (Wilmette, IL); Sproul, William D. (Palantine, IL); Chu, Xi (Evanston, IL); Barnett, Scott A. (Evanston, IL)

1998-01-01T23:59:59.000Z

398

Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride carbide and carbonitride  

DOE Patents (OSTI)

A composite material having high hardness comprises a carbon nitrogen compound, such as CN{sub x} where x is greater than 0.1 and up to 1.33, deposited on a metal or metal compound selected to promote deposition of substantially crystalline CN{sub x}. The carbon nitrogen compound is deposited on a crystal plane of the metal or metal compound sufficiently lattice-matched with a crystal plane of the carbon nitrogen compound that the carbon nitrogen compound is substantially crystalline. A plurality of layers of the compounds can be formed in alternating sequence to provide a multi-layered, superlattice coating having a coating hardness in the range of 45--55 GPa, which corresponds to the hardness of a BN coating and approaches that of a diamond coating. 10 figs.

Wong, M.S.; Li, D.; Chung, Y.W.; Sproul, W.D.; Xi Chu; Barnett, S.A.

1998-03-10T23:59:59.000Z

399

Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride carbide and carbonitride  

DOE Patents (OSTI)

A composite material having high hardness comprises a carbon nitrogen compound, such as CN.sub.x where x is greater than 0.1 and up to 1.33, deposited on a metal or metal compound selected to promote deposition of substantially crystalline CN.sub.x. The carbon nitrogen compound is deposited on a crystal plane of the metal or metal compound sufficiently lattice-matched with a crystal plane of the carbon nitrogen compound that the carbon nitrogen compound is substantially crystalline. A plurality of layers of the compounds can be formed in alternating sequence to provide a multi-layered, superlattice coating having a coating hardness in the range of 45-55 GPa, which corresponds to the hardness of a BN coating and approaches that of a diamond coating.

Wong, Ming-Show (Northbrook, IL); Li, Dong (Evanston, IL); Chung, Yin-Wah (Wilmette, IL); Sproul, William D. (Palantine, IL); Chu, Xi (Evanston, IL); Barnett, Scott A. (Evanston, IL)

1998-01-01T23:59:59.000Z

400

Intermetallic FeAl based coatings deposited by the electrospark technique: corrosion behavior in molten (Li+K) carbonate  

Science Journals Connector (OSTI)

In the strongly corrosive environment of the molten carbonate fuel cells (MCFC) the protection of the wet-seal areas of the bipolar plates is accomplished by aluminum diffusion coatings. The coating layer is usually produced by depositing metallic aluminum onto a stainless steel surface with the ion vapor deposition (IVD) technique followed by a diffusion annealing treatment in order to transform the as-deposited Al into a corrosion resistant FeAl-based intermetallic surface alloy. In an attempt to find cheaper alternatives, in this work we report the results obtained depositing directly a layer of FeAl intermetallic alloy onto a 316L austenitic stainless steel by using the electrospark deposition (ESD) technique. ESD can apply metallurgical bonded coatings in ambient conditions without the need of post-deposition annealing treatments. Structure, chemical composition and morphology of the FeAl coating has been analyzed and compared to a standard IVD aluminized coating. By electrochemical measurements and long-term immersion tests it is inferred that the corrosion resistance of the electrospark coating is comparable to that of the IVD coating. Some sign of coating degradation after 1000 h immersion in the (Li+K) carbonate mixture at 650 °C was due to coating microcracking and Al depletion.

S. Frangini; A. Masci

2004-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

The limited growth of vegetated shear layers  

E-Print Network (OSTI)

In contrast to free shear layers, which grow continuously downstream, shear layers generated by submerged vegetation grow only to a finite thickness. Because these shear layers are characterized by coherent vortex structures ...

Ghisalberti, M.

402

Energy transport in the solar transition layer  

Science Journals Connector (OSTI)

...research-article Research Article Energy transport in the solar transition layer J...emission measure in the solar transition layer, which...the heat transport. solar transition layer|differential emission measure|energy transport|ion-acoustic...

2001-01-01T23:59:59.000Z

403

Artificial Neural Networks Single Layer Networks Multi Layer Networks Generalization Artificial Neural Networks  

E-Print Network (OSTI)

Artificial Neural Networks Single Layer Networks Multi Layer Networks Generalization Artificial Neural Networks #12;Artificial Neural Networks Single Layer Networks Multi Layer Networks Generalization 1 Artificial Neural Networks Properties Applications Classical Examples Biological Background 2

Kjellström, Hedvig

404

The Progress on Low-Cost, High-Quality, High-Temperature Superconducting Tapes Deposited by the Combustion Chemical Vapor Deposition Process  

SciTech Connect

The innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. Over 100 meter lengths of both Ni and Ni-W (3 at. Wt.%) substrates with a surface roughness of 12-18 nm were produced. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. Buffer layer architecture of strontium titanate (SrTiO{sub 3}) and ceria (CeO{sub 2}) have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with a J{sub c} of 1.1 MA/cm{sup 2} at 77 K and self-field. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm{sup 2}. In addition, superconducting YBCO films with an I{sub c} of 60 A/cm-width (J{sub c} = 1.5 MA/cm{sup 2}) were grown on ORNL RABiTS (CeO{sub 2}/YSZ/Y{sub 2}O{sub 3}/Ni/Ni-3W) using CCVD process.

Shoup, S.S.; White, M.K.; Krebs, S.L.; Darnell, N.; King, A.C.; Mattox, D.S.; Campbell, I.H.; Marken, K.R.; Hong, S.; Czabaj, B.; Paranthaman, M.; Christen, H.M.; Zhai, H.-Y. Specht, E.

2008-06-24T23:59:59.000Z

405

Mechanisms of deposition of a carbonate mud spit: Ramshorn Spit, eastern Florida Bay  

SciTech Connect

The turtle grass (Thalassia testudinum) community has a significant influence on sedimentation in Florida Bay, but the roles other processes may play in the buildup of mud bank and spit sediments are poorly understood. Samples from cores taken from Ramshorn Spit and Ramshorn Shoal were classified into 4 basic types on the basis of particle size distribution, organic content, and faunal assemblages. In order of increasing volumetric importance they are: (1) very thin, discontinuous shelly packstones, representing overbank or storm deposits; (2) thin, continuous basal shelly packstones, the initial marine deposit on the Pleistocene bedrock surface; (3) muddy wackestones, of variable thickness, deposited in the presence of a seagrass community; (4) very thick, faintly laminated fine mudstones, with very sparse fauna, representing weak current-transported sediments settling out of suspension. Discriminant function analysis confirms the classifications and shows that these sediment layers are indeed correlatable between cores. Interpretation of the core logs from Ramshorn Spit indicates a definite change in stratigraphy southwestward from the spit and bank junction to the tip of the spit itself. The different sediment layers show a small but significant inclination to the southwest. Throughout its depositional history, Ramshorn Spit seems to have been actively accreting outward into the surrounding lake by means of a current-transported fine mud fraction. After settling out at the growing tip of the spit, the sediments are subsequently stabilized at some later time by a turtle-grass cover.

Holliday, V.; Parks, J.M.

1985-02-01T23:59:59.000Z

406

Chemical vapor deposition of amorphous semiconductor films. Semiannual report, 1 May 1983-31 October 1984  

SciTech Connect

This report presents an analysis of intrinsic and phosphorus-doped n-type amorphous silicon films deposited by LPCVD from disilane in a laminar flow tubular reactor. These films were analyzed using SIMs, ESR measurements, optical absorption, and conductivity in light and dark. CVD deposited i layers were used to make platinum Schottky barrier devices and hybrid cells utilizing glow discharge deposited layers in both the ITO/nip/Mo and ITO/pin/Mo configurations. The highest efficiency of hybrid cells with the ITO/ni(CVD)/p(GD)/Mo structure was approximately 1.5%. The highest efficiencies were obtained with thin i layers. The highest efficiency for the ITO/p(GD)/in(CVD)/Mo configuration was 4.0%. A chemical model was developed describing the gas phase reactions and film growth; the model quantitatively describes the effluent composition when the measured growth rate is input. Kinetic rate expressions and constants for growth from higher silanes are being determined for a wide range of reaction conditions.

Not Available

1984-03-01T23:59:59.000Z

407

Strain relaxation in graphene grown by chemical vapor deposition  

SciTech Connect

The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27?cm{sup ?1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

Troppenz, Gerald V., E-mail: gerald.troppenz@helmholtz-berlin.de; Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin (Germany)

2013-12-07T23:59:59.000Z

408

Scale and deposits in high-heat-rejection engines  

SciTech Connect

Scaling under conditions very similar to those of a heavy-duty diesel engine cooling system was investigated using a newly designed, versatile test stand. The parameters included flow rate, heat flux, hardness, along with bulk fluid temperatures. The hot surface temperature, a critical parameter, was also measured. Results were interpreted in terms of the conditions in the boundary layer at the hot surface. Critical values of flow rate and heat flux existed for scaling under experimental conditions. A quantitative relationship of scale with heat flux and hardness was observed. Deposits produced from testing of different types of commercial coolants, including phosphate based and nonphosphate bases, were measured and compared with results from simple beaker tests.

Chen, Y.S.; Kershisnik, E.I. [Dober Group, Glenwood, IL (United States); Hudgens, R.D. [Fleetguard, Inc., Cookeville, TN (United States); Corbeels, C.L.; Zehr, R.L. [Cummins Engine Co., Inc., Columbus, IN (United States)

1999-08-01T23:59:59.000Z

409

Constraining Mercury Oxidation Using Wet Deposition  

E-Print Network (OSTI)

Constraining Mercury Oxidation Using Wet Deposition Noelle E. Selin and Christopher D. Holmes mercury oxidation [Selin & Jacob, Atmos. Env. 2008] 30 60 90 120 150 30 60 90 120 150 30 60 90 120 150 30 Influences on Mercury Wet Deposition · Hg wet dep = f(precipitation, [Hg(II)+Hg(P)]) Correlation (r2) between

Selin, Noelle Eckley

410

Simulation of Coal Ash Particle Deposition Experiments  

Science Journals Connector (OSTI)

Simulation of Coal Ash Particle Deposition Experiments† ... Ichikawa et al.(7) measured deposition behavior for ash particles from ashing tests for a series of five coals, using a nominally 1 m tall × 60 mm diameter ash-heating tube that was fitted with a cooled, temperature-controlled particle impact probe oriented at a 30° angle to the atmospheric pressure air flow. ...

Weiguo Ai; John M. Kuhlman

2011-01-20T23:59:59.000Z

411

MODELING PARTICLE DEPOSITION ON HVAC HEAT EXCHANGERS  

E-Print Network (OSTI)

LBNL-49339 MODELING PARTICLE DEPOSITION ON HVAC HEAT EXCHANGERS J.A. Siegel1,3 * and W.W. Nazaroff2 Department of Energy under contract DE-AC03-76SF00098. #12;MODELING PARTICLE DEPOSITION ON HVAC HEAT, such as discontinuities in the fins, are hypothesized to be responsible for the discrepancy. INDEX TERMS HVAC, Fouling

412

Hydrogen in magnesium palladium thin layer structures.  

E-Print Network (OSTI)

??In this thesis, the study of hydrogen storage, absorption and desorption in magnesium layers is described. The magnesium layers have a thickness of 50-500 nm… (more)

Kruijtzer, G.L.

2008-01-01T23:59:59.000Z

413

Covalent Layer-by-Layer Synthesis of Responsive Porous Filters  

E-Print Network (OSTI)

of surfaces could be obtained by including a number of different functional groups.60 Such and coworkers used azide and alkyne functional groups to create a cross linked layer-by-layer assembly of poly(acrylic acid).65 Click chemistry was used... These particles were beneficial in that they became the first 17 experimental study of the phase morphology of mixed polymer brushed on a curved surface. They also introduced apt synthetic precursors of poly(acrylic acid)/PS functionalized particle surfaces...

Allen, Ainsley Larue

2012-07-16T23:59:59.000Z

414

Formation of Cobalt Silicide Films by Ion Beam Deposition  

SciTech Connect

Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si (111) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 C for 30 minutes. Cobalt depth profiles and contaminations were determined using Rutherford backscattering spectrometry (RBS) and time-of-flight energy elastic recoil detection analysis (ToF-E ERDA). The polycrystalline cobalt silicide phases formed were characterized by grazing-incidence x-ray diffraction (GIXRD). The surface topography development and interfaces have been investigated by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.

Zhang, Yanwen; McCready, David E.; Wang, Chong M.; Young, James S.; Mckinley, Mathew I.; Whitlow, Harry J.; Razpet, Alenka; Possnert, Göran; Zhang, Tonghe; Wu, Yuguang

2006-01-01T23:59:59.000Z

415

Low-pressure chemical vapor deposition of amorphous silicon photovoltaic devices. Annual technical progress report, 1 May 1984-30 April 1985  

SciTech Connect

Intrinsic and doped a-Si:H films were deposited by low pressure chemical vapor deposition (CVD) for disilane. Intrinsic layers were deposited at growth rates as high as 50 A/s. A chemical reaction engineering model that quantitatively describes the CVD reactor behavior has been developed. CVD intrinsic material was characterized by measurements of impurities, optical band gap, photoconductivity, activation energy, diffusion length, and density of states. Photovoltaic cells of the p-i-n type with efficiencies of 4% and 3.6% were fabricated using CVD intrinsic layers deposited at 1 A/s and 9 A/s, respectively. A maximum short-circuit current of 11 mA/cm/sup 2/ under 87.5 MW/cm/sup 2/ ELH illumination was obtained with boron-compensated CVD intrinsic material. Efficiency-limiting mechanisms in CVD cells were quantitatively analyzed and related to fundamental properties.

Baron, B.N.; Rocheleau, R.E.; Hegedus, S.S.

1986-02-01T23:59:59.000Z

416

Layered architecture for quantum computing  

E-Print Network (OSTI)

We develop a layered quantum computer architecture, which is a systematic framework for tackling the individual challenges of developing a quantum computer while constructing a cohesive device design. We discuss many of the prominent techniques for implementing circuit-model quantum computing and introduce several new methods, with an emphasis on employing surface code quantum error correction. In doing so, we propose a new quantum computer architecture based on optical control of quantum dots. The timescales of physical hardware operations and logical, error-corrected quantum gates differ by several orders of magnitude. By dividing functionality into layers, we can design and analyze subsystems independently, demonstrating the value of our layered architectural approach. Using this concrete hardware platform, we provide resource analysis for executing fault-tolerant quantum algorithms for integer factoring and quantum simulation, finding that the quantum dot architecture we study could solve such problems on the timescale of days.

N. Cody Jones; Rodney Van Meter; Austin G. Fowler; Peter L. McMahon; Jungsang Kim; Thaddeus D. Ladd; Yoshihisa Yamamoto

2012-09-27T23:59:59.000Z

417

Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells  

E-Print Network (OSTI)

Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells S layers for solar cells. PACS : 68.55.ag Semiconductors, 68.55.J Morphology of films , 68.55.Nq the oxidation occurs is strongly dependent on the texture of deposited films. As-grown films deposited

Boyer, Edmond

418

Giant Dielectric Constant Controlled by Maxwell-Wagner Dielectric  

NLE Websites -- All DOE Office Websites (Extended Search)

Giant Dielectric Constant Controlled Giant Dielectric Constant Controlled by Maxwell-Wagner Dielectric Relaxation in Al2O3/TiO2 Nanolaminates Synthesized by Atomic Layer Deposition Giant Dielectric Constant Controlled by Maxwell-Wagner Dielectric Relaxation in Al2O3/TiO2 Nanolaminates Synthesized by Atomic Layer Deposition Nanolaminate consisting of Al2O3 and TiO2 oxide sublayers were synthesized, using atomic layer deposition (ALD) to produce individual layers with atomic scale control. The main goal of this work is to produce robust high dielectric constant layers based on biocompatible materials, such as Al2O3 and TiO2, suitable to fabricate high-capacitance capacitors for microchip embedded energy storage capacitor for implantable biomedical devices. However, these capacitors based on Al2O3/TiO2 nanolaminates can provide

419

Argonne CNM: 2013 Colloquium Series  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Colloquium Series 3 Colloquium Series 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | Date Title December 18, 2013 "Monodisperse Carbon Nanomaterial Heterostructures," by Mark Hersam, Northwestern University, hosted by Tijana Rajh Abstract: Improvements in carbon nanomaterial monodispersity have yielded corresponding enhancements in the performance of electronic, optoelectronic, sensing, and energy technologies. However, in all of these cases, carbon nanomaterials are just one of many materials employed, suggesting that further device improvements can be achieved by focusing on the integration of disparate nanomaterials into heterostructures with well-defined interfaces. For example, organic self-assembled monolayers on graphene act as effective seeding layers for atomic layer deposited (ALD) dielectrics, resulting in metal-oxide-graphene capacitors with wafer-scale reliability and uniformity comparable to ALD dielectrics on silicon.

420

Preliminary characterization of deposits formed on super heater surfaces in an FBC-boiler fired with municipal solid waste  

SciTech Connect

A preliminary study of the chemical and mineralogical composition of deposits formed on super heater tubes in a CFB fired with 100% sorted municipal solid waste has been carried out. Samples of deposits formed on both the windward and leeward side of the tubes were analyzed with the aim to identify the ash species involved in fouling and to get information about chemical interaction between the tube alloys and the deposits. The metal temperatures in the super heater region were in the range 460--540 C during the sampling period. The identified deposit constituents show the importance of alkali metal chlorides in the deposit forming process. Alkali metal chlorides (NaCl and KCl) were found both on the windward side deposits and on the leeward side. Other components were CaSO{sub 4}m MgO and some oxide and phosphate compounds. Some of these components have probably been formed through reaction between the alloy and the deposit but more work will be done in co-operation with the Competence Centre for High Temperature Corrosion, Sweden in order to elucidate such interactions and the influence of deposits on the corrosion rates. The presence of chlorides on an alloyed steel at the temperatures used here may cause a rapid deterioration of the protective oxide scale on the alloy. First, a layer of molten chlorides may dissolve species from the protective oxide layer on the steel tube. Secondly, corrosion may occur according to a mechanism called active oxidation, which involves diffusion of chlorine to the metal/oxide interface and breakdown of the scale due to formation of new products.

Steenari, B.M.; Lindqvist, O.; Andersson, B.A.

1999-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Inclined-substrate deposition of biaxially textured magnesium oxide thin films for YBCO coated conductors.  

SciTech Connect

Highly textured MgO films were grown by the inclined-substrate deposition (ISD) technique at a high deposition rate. A columnar grain with a roofing-tile-shaped surface was observed in these MgO films. X-ray pole figure, and {phi}- and {omega}-scan were used to characterize in-plane and out-of-plane textures. MgO films deposited when the incline angle {alpha} was 55 and 30 degrees exhibited the best in-plane and out-of-plane texture, respectively. High-quality YBCO films were epitaxially grown on ISD-MgO-buffered Hastelloy C substrates by pulsed laser deposition. {Tc}=88 K, with sharp transition, and j{sub c} values of {approx}2x10{sup 5} A/cm{sup 2} at 77 K in zero field were observed on films 5 mm wide and 1 cm long. This work has demonstrated that biaxially textured ISD MgO buffer layers deposited on metal substrates are excellent candidates for fabrication of high-quality YBCO coated conductors.

Ma, B.; Li, M.; Jee, Y. A.; Koritala, R. E.; Fisher, B. L.; Balachandran, U.; Energy Technology

2002-02-01T23:59:59.000Z

422

Biaxially aligned template films fabricated by inclined-substrate deposition for YBCO-coated conductor applications.  

SciTech Connect

Inclined substrate deposition (ISD) has the potential for rapid production of high-quality biaxially textured buffer layers, which are important for YBCO-coated conductor applications. We have grown biaxially textured MgO films by ISD at deposition rates of 20-100 {angstrom}/sec. Columnar grains with a roof-tile surface structure were observed in the ISD-MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD-MgO films are tilted at an angle from the substrate normal. A small {phi}-scan full-width at half maximum (FWHM) of {approx}9{sup o} was observed on MgO films deposited at an inclination angle of 55{sup o}. In-plane texture in the ISD MgO films developed in the first 0.5 {micro}m from the interface, then stabilized with further increases in film thickness. YBCO films deposited by pulsed laser deposition on ISD-MgO buffered Hastelloy C276 substrates were biaxially aligned with the c-axis parallel to the substrate normal. T{sub c} of 91 K with a sharp transition and transport J{sub c} of 5.5 x 10{sup 5} A/cm{sup 2} at 77 K in self-field were measured on a YBCO film that was 0.46-{micro}m thick, 4-mm wide, 10-mm long.

Ma, B.; Li, M.; Koritala, R. E.; Fisher, B. L.; Erck, R. A.; Dorris, S. E.; Miller, D. J.; Balachandran, U.

2002-08-12T23:59:59.000Z

423

Method for gas-metal arc deposition  

DOE Patents (OSTI)

Method and apparatus for gas-metal arc deposition of metal, metal alloys, and metal matrix composites. The apparatus contains an arc chamber for confining a D.C. electrical arc discharge, the arc chamber containing an outlet orifice in fluid communication with a deposition chamber having a deposition opening in alignment wiht the orifice for depositing metal droplets on a coatable substrate. Metal wire is passed continuously into the arc chamber in alignment with the orifice. Electric arcing between the metal wire anode and the orifice cathode produces droplets of molten metal from the wire which pass through the orifice and into the deposition chamber for coating a substrate exposed at the deposition opening. When producing metal matrix composites, a suspension of particulates in an inert gas enters the deposition chamber via a plurality of feed openings below and around the orifice so that reinforcing particulates join the metal droplets to produce a uniform mixture which then coats the exposed substrate with a uniform metal matrix composite.

Buhrmaster, Carol L. (Corning, NY); Clark, Denis E. (Idaho Falls, ID); Smartt, Herschel B. (Idaho Falls, ID)

1990-01-01T23:59:59.000Z

424

Method for gas-metal arc deposition  

DOE Patents (OSTI)

Method and apparatus for gas-metal arc deposition of metal, metal alloys, and metal matrix composites are disclosed. The apparatus contains an arc chamber for confining a D.C. electrical arc discharge, the arc chamber containing an outlet orifice in fluid communication with a deposition chamber having a deposition opening in alignment with the orifice for depositing metal droplets on a coatable substrate. Metal wire is passed continuously into the arc chamber in alignment with the orifice. Electric arcing between the metal wire anode and the orifice cathode produces droplets of molten metal from the wire which pass through the orifice and into the deposition chamber for coating a substrate exposed at the deposition opening. When producing metal matrix composites, a suspension of particulates in an inert gas enters the deposition chamber via a plurality of feed openings below and around the orifice so that reinforcing particulates join the metal droplets to produce a uniform mixture which then coats the exposed substrate with a uniform metal matrix composite. 1 fig.

Buhrmaster, C.L.; Clark, D.E.; Smartt, H.B.

1990-11-13T23:59:59.000Z

425

Apparatus for gas-metal arc deposition  

DOE Patents (OSTI)

Apparatus for gas-metal arc deposition of metal, metal alloys, and metal matrix composites. The apparatus contains an arc chamber for confining a D.C. electrical arc discharge, the arc chamber containing an outlet orifice in fluid communication with a deposition chamber having a deposition opening in alignment with the orifice for depositing metal droplets on a coatable substrate. Metal wire is passed continuously into the arc chamber in alignment with the orifice. Electric arcing between the metal wire anode and the orifice cathode produces droplets of molten metal from the wire which pass through the orifice and into the deposition chamber for coating a substrate exposed at the deposition opening. When producing metal matrix composites, a suspenion of particulates in an inert gas enters the deposition chamber via a plurality of feed openings below and around the orifice so that reinforcing particulates join the metal droplets to produce a uniform mixture which then coats the exposed substrate with a uniform metal matrix composite.

Buhrmaster, Carol L. (Corning, NY); Clark, Denis E. (Idaho Falls, ID); Smartt, Herschel B. (Idaho Falls, ID)

1991-01-01T23:59:59.000Z

426

IMPROVED pc-Si p-LAYER AND a-Si i-LAYER MATERIALS USING VHF PLASMA X. Deng, S. J. Jones, T. Liu, M. Izu and S. R. Ovshinsky  

E-Print Network (OSTI)

, Michigan 48084 ABSTRACT Microcrystalline Si p-layers have been widely used in a-Si solar cell technology to achieve high efficiency. To further improve the solar cell performance, we have studied the deposition process and consequently have improved the solar cell current. This improvement was primarily in the blue

Deng, Xunming

427

Electrochemistry of chemical vapor deposited tungsten films with relevance to chemical mechanical polishing  

SciTech Connect

The electrochemical behavior of chemically vapor deposited tungsten films in solutions of interest to tungsten chemical mechanical polishing has been investigated using dc potentiodynamic polarization, linear polarization, and Tafel methods. It was found that in the absence of an oxidizer, the tungsten surface was passivated most effectively at acidic pH values. At pH 2 or 4, a WO{sub 2}/WO{sub 3} duplex oxide layer of less than 50 A thickness was detected over the tungsten layer by X-ray photoelectron spectroscopy. The oxide layer formed at pH 2 was much thicker, and had better passivity compared to the oxide formed at pH 4. Addition of H{sub 2}O{sub 2} at pH 2 or 4 resulted in a dramatic increase in tungsten dissolution.

Kneer, E.A.; Raghunath, C.; Raghavan, S. [Univ. of Arizona, Tucson, AZ (United States). Dept. of Materials Science and Engineering; Jeon, J.S. [Advanced Micro Devices Inc., Sunnyvale, CA (United States)

1996-12-01T23:59:59.000Z

428

Methods for predicting wax precipitation and deposition  

SciTech Connect

Removal of wax from wells and flowlines can account for significant additional operating costs. To evaluate these potential costs, the operating conditions that allow waxes to precipitate in the wellbore must be identified, and deposition rates must be estimated to determine the costs associated with removal of wax deposits. Presented in this paper are laboratory and analytic methods that can be used to estimate both the critical operating conditions and the deposition rates. The laboratory tests and analysis presented may be used to characterize any type of oil.

Weingarten, J.S.; Euchner, J.A.

1988-02-01T23:59:59.000Z

429

Atom Nano-lithography with Multi-layer Light Masks: Particle Optics Analysis  

E-Print Network (OSTI)

We study the focusing of atoms by multiple layers of standing light waves in the context of atom lithography. In particular, atomic localization by a double-layer light mask is examined using the optimal squeezing approach. Operation of the focusing setup is analyzed both in the paraxial approximation and in the regime of nonlinear spatial squeezing for the thin-thin as well as thin-thick atom lens combinations. It is shown that the optimized double light mask may considerably reduce the imaging problems, improve the quality of focusing and enhance the contrast ratio of the deposited structures.

R. Arun; I. Sh. Averbukh; T. Pfau

2005-03-22T23:59:59.000Z

430

The continental layers of Europe  

Science Journals Connector (OSTI)

...in the Love-wave equation. TIIE COI~TIIqENTAL LAYERS OF EUI~OFE 271 DISCUSSIONOF RESULTS The suggestion that the intermediate...of Sciences, 44:2-12 (1941). THE CONTINENTALLAYERSOF EUI%OPE 273 that in the neighborhood of Hawaii the regional compensation...

Robert Stoneley

431

Mathematical formulation and numerical modeling of wax deposition in pipelines from enthalpy–porosity approach and irreversible thermodynamics  

Science Journals Connector (OSTI)

In the last 10 years, there have been a number of studies in modeling of the deposition processes in flowlines. Most of these models: (1) assume empirical or semi-empirical correlations to predict the pressure drop and temperature profile, (2) ignore the radial convection flow in the layer composed of the two-phase wax and oil (that is the gel layer), and (3) use Fick’s law to describe the diffusion flux of species towards the wall by using the chain rule to relate concentration gradient to temperature gradient. In this work, a rigorous mathematical model for the prediction of wax deposition in pipelines is presented for laminar flow. The transient deposition of each component is calculated from the solution of the coupled momentum, energy and, species balance equations, and a thermodynamic wax precipitation model at the local level. An enthalpy formulation based on a fixed-grid approach is used to approximate the convection flow in the gel layer. We do not use the chain rule to relate composition gradient to temperature gradient in Fick’s law to avoid violating the laws of irreversible thermodynamics. Our diffusion flux expression includes molecular diffusion (concentration gradient is driving force) and thermal diffusion (temperature gradient is driving force) with appropriate diffusion coefficients. This work also includes the description of the numerical solution of the governing equations. Numerical results and features of wax deposition as well as model verification with experimental data are presented in a separate paper.

R. Banki; H. Hoteit; A. Firoozabadi

2008-01-01T23:59:59.000Z

432

Deposition of Platinum Nanoparticles on Carbon Nanotubes by Supercriti...  

NLE Websites -- All DOE Office Websites (Extended Search)

Deposition of Platinum Nanoparticles on Carbon Nanotubes by Supercritical Fluid Method. Deposition of Platinum Nanoparticles on Carbon Nanotubes by Supercritical Fluid Method....

433

Quaternary Borate Deposits As A Geothermal Exploration Tool In...  

Open Energy Info (EERE)

Borate Deposits As A Geothermal Exploration Tool In The Great Basin Abstract A close spatial relationship exists between Quaternary borate deposits and moderate to high...

434

Supercritical Fluid Immersion Deposition: A New Process for Selective...  

NLE Websites -- All DOE Office Websites (Extended Search)

property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium...

435

The Process Fundamentals and Parameters of Electro-Spark Deposition.  

E-Print Network (OSTI)

??Electrospark Deposition (ESD) is a micro-bonding process that is capable of depositing wear and corrosion resistance coating to repair, to improve and to extend the… (more)

Tang, Siu Kei

2009-01-01T23:59:59.000Z

436

Resuspension and dry deposition research needs  

SciTech Connect

The author concludes that better predictive models are needed for the signifcant health, ecological, and economic impacts of resuspended particles and their subsequent dry deposition. Both chemical and radioactive aerosols are discussed. (PSB)

Sehmel, G.A.

1983-01-01T23:59:59.000Z

437

Linked Deposit Loan Program (West Virginia)  

Energy.gov (U.S. Department of Energy (DOE))

The Linked Deposit Loan Program is targeted at small, private firms with 50 or fewer employees and gross annual revenues of $5 million or less comes. This loan offered through the West Virginia...

438

Small Business Linked Deposit Program (Oklahoma)  

Energy.gov (U.S. Department of Energy (DOE))

The Small Business Linked Deposit Program provides below-market interest rates for qualified small businesses and certified industrial parks through local financing sources. Loans are for a two...

439

CALCIUM CARBONATE DEPOSITION IN GEOTHERMAL WELLBORES  

E-Print Network (OSTI)

geothermal energy exploration and development are most important. Geothermal resources in Costa Rica have of energy development in Costa Rica. The Miravalles geothermCALCIUM CARBONATE DEPOSITION IN GEOTHERMAL WELLBORES MIRAVALLES GEOTHERMAL FIELD COSTA RICA

Stanford University

440

Part I: Typology of Uranium Deposits  

Science Journals Connector (OSTI)

A variety of global and regional classification schemes for uranium deposits have been proposed in the past by a number of geoscientists including Heinrich (1958), Roubault (1958), Ruzicka (1971), Ziegler (197...

Franz J. Dahlkamp

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "layer deposition ald" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Dating Fan Deposits with Cosmogenic Nuclides  

Science Journals Connector (OSTI)

Boulders are preferable to smaller clasts in that ... time since deposition on the fan. Large boulders are produced through rapid large-scale mass ... to the fan in debris flows or other flood events. Although in...

Susan Ivy-Ochs; Miriam Dühnforth…

2013-01-01T23:59:59.000Z

442

Xylan and Lignin Deposition on the Secondary Wall of Fagus Crenata Fibers  

Science Journals Connector (OSTI)

ABSTRACT The secondary wall ultrastructure of Fagus crenata fibers was examined using field emission scanning electron microscopy (FESEM). Specimens were treated with sodium chlorite and xylanase to remove lignin and xylan, respectively. Microfibrils were clearly visible at the innermost surface of the differentiating fiber secondary wall and there were no globular substances observed in the control specimen. After delignification or xylanase-degradation, microfibrils remained almost the same size and had the same appearance as controls. Anti-xylan antiserum immunolabeling, however, indicated that the microfibrils were coated with very thin layer of xylan1. Microfibrils were not apparent in the secondary wall of the mature fiber in control specimens. The secondary wall appeared to be a single homogeneous substance. Microfibrils with many globular substances were observed in the delignified specimens and their diameter was larger than that of microfibrils at the surface of the differentiating secondary wall. Following xylanase treatment, the microfibrils had a smooth surface without any globules, indicating that the globular structure is xylan. On the basis of these results, we propose the following mechanism for secondary wall assembly. Cellulose microfibrils synthesized on the plasma membrane are released into the innermost surface of the secondary wall and coated with a very thin layer of xylan that was previously deposited there. Successive deposition of xylan into the cell wall increases the diameter of the microfibrils. The large amount of xylan deposited on the microfibrils has a globular appearance. Lignin deposition occurs simultaneously with xylan deposition and, finally, microfibrils with globular xylan are masked with lignin, resulting in the homogeneous appearance of the cell wall.

Tatsuya Awano; Keiji Takabe; Minoru Fujita

2001-01-01T23:59:59.000Z

443

Manufacture of YBCO Superconducting Flexible Tapes from Nanoparticle Films Derived from Sedimentation and by Flame Deposition of Nanoparticles from Solution  

SciTech Connect

The objective of this CRADA was to develop the experimental and theoretical basis of a technology to produce yttrium barium copper oxide (YBCO) superconducting flexible tapes derived from nanoparticle metal oxide sols. The CRADA was a joint effort between Oxford Superconducting Technology, Brookhaven National Laboratory and Karpov Institute of Physical Chemistry. The effort was divided into three main tasks, the synthesis of a heteroepitaxial oxide buffer layer, and the manufacture of a flexible biaxially textured metallic substrate and the synthesis of a heteroepitaxial crystalline YBCO layer. The formation of a heteroepitaxial buffer layer was implemented using technology developed at the Karpov Institute of Physical Chemistry for the synthesis, stabilization and deposition of polymer stabilized nanoparticle metal oxide sols. Using this technology, flexible oriented RABiTS nickel tapes, manufactured and supplied by the CRADA partner, Oxford Superconducting Technology, Carteret, New Jersey, were coated with a film of metal oxide nanoparticles. After coating the RABiTS nickel tapes with the nanoparticle sols the nickel tape/nanoparticle composite structure was sintered in order to form a dense crystalline heteroepitaxial oxide layer on the surface of the tape, also known as a ‘buffer’ layer. The final phase of the research was the formation of a heteroepitaxial YBCO layer, grown on top of the metal oxide buffer layer. This work was scheduled to follow the development of the heteroepitaxial oxide buffer layer as described above. Three different polymer stabilized sols, yttrium hydroxide, Y(OH){sub 3}, copper hydroxide, Cu(OH){sub 2}, and barium fluoride, BaF{sub 2}, were synthesized and combined in the appropriate stoichiometric ratio. This metal oxide sol was then be deposited onto the buffer layer and reacted to form a crystalline heteroepitaxial YBCO film ranging from 1–5 microns thick.

Wiesmann, Harold

2008-02-24T23:59:59.000Z

444

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents (OSTI)

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2001-01-01T23:59:59.000Z

445

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents (OSTI)

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2002-01-01T23:59:59.000Z

446

Research on thermophoretic and inertial aspects of ash particle deposition on heat exchanger surfaces in coal-fired equipment  

SciTech Connect

During this third quarter of Grant DE-FG22-86 PC 90756, we have obtained preliminary experimental results on the deposition behavior of submicron and supermicron solid particles (MgO, Al[sub 2]O[sub 3]) on a two-dimensional surface exposed to a high temperature/velocity particle laden'' atmospheric pressure jet. The uniform velocity ( plug flow'') jet, with temperatures up to about 1520 K, derives from a pressurized gaseous fuel microcombustion chamber (110 cc) equipped with a platinum guiding (exit) channel. Particles were generated by several methods (Berglund-Liu type aerosol generator, ultrasonic nebulizer, or syringe feeder with aerodynamic particle off-take) and were introduced into the combustion chamber with a carrier stream of nitrogen or air. Laser light scattering and reflectivity techniques were used for the study of particle deposition, supplemented by post-mortem microscopy on the exposed surface. We observed a linear deposition rate of submicron particles due to the thermophoretic mechanism (until the first layer was developed) under both high and low velocity conditions. On the contrary, supermicron particle deposits reach a steady-state, evidently due to a dynamic equilibrium between particle deposition and dislodging caused by the impacting particles. At several temperatures particle-free subsonic gas jets (up to 120 m/sec) were unable to remove the submicron particle layer.

Rosner, D.E.

1987-06-01T23:59:59.000Z

447

Thermo-Mechanical Model Development and Validation of DirectedEnergy Deposition Additive Manufacturing of Ti-6Al-4V  

Science Journals Connector (OSTI)

Abstract A thermo-mechanical model of directed energy deposition additive manufacturing of Ti-6Al-4V is developed using measurements of the surface convection generated by gasses flowing during the deposition. In directed energy deposition, material is injected into a melt pool that is traversed to fill in a cross-section of a part, building it layer-by-layer. This creates large thermal gradients that generate plastic deformation and residual stresses. Finite element analysis (FEA) is often used to study these phenomena using simple assumptions of the surface convection. This work proposes that a detailed knowledge of the surface heat transfer is required to produce more accurate FEA results. The surface convection generated by the deposition process is measured and implemented in the thermo-mechanical model. Three depositions with different geometries and dwell times are used to validate the model using in situ measurements of the temperature and deflection as well as post-process measurements of the residual stress. An additional model is developed using the assumption of free convection on all surfaces. The results show that a measurement-based convection model is required to produce accurate simulation results.

J.C. Heigel; P. Michaleris; E.W. Reutzel

2014-01-01T23:59:59.000Z

448

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

449

Hydrocarbon and Deposit Morphology Effects on EGR Cooler Deposit Stability and Removal  

Energy.gov (U.S. Department of Energy (DOE))

This paper reports on studies carried out at ORNL to examine the shear force required to remove particles from a well-developed EGR cooler deposit.

450

Fe/Si(001) Ferromagnetic Layers: Reactivity, Local Atomic Structure and Magnetism  

SciTech Connect

Ultrathin ferromagnetic Fe layers on Si(001) have recently been synthesized using the molecular beam epitaxy (MBE) technique, and their structural and magnetic properties, as well as their interface reactivity have been investigated. The study was undertaken as function of the amount of Fe deposited and of substrate temperature. The interface reactivity was characterized by Auger electron spectroscopy (AES). The surface structure was characterized by low-energy electron diffraction (LEED). The magnetism was investigated by magneto-optical Kerr effect (MOKE). A higher deposition temperature stabilizes a better surface ordering, but it also enhances Fe and Si interdiffusion and it therefore decreases the magnetism. Despite the rapid disappearance of the long range order with Fe deposition at room temperature, the material exhibits a significant uniaxial in-plane magnetic anisotropy. For the Fe deposition performed at high temperature (500 deg. C), a weak ferromagnetism is still observed, with saturation magnetization of about 10% of the value obtained previously. MOKE studies allowed inferring the main properties of the distinct formed layers.

Lungu, G. A.; Costescu, R. M.; Husanu, M. A.; Gheorghe, N. G. [National Institute of Materials Physics, Atomistilor 105bis, 077125 Magurele-Ilfov (Romania)

2011-10-03T23:59:59.000Z

451

Thermally-driven H interaction with HfO{sub 2} films deposited on Ge(100) and Si(100)  

SciTech Connect

In the present work, we investigated the thermally-driven H incorporation in HfO{sub 2} films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO{sub 2}/substrate interface region (at 300?°C) and through the whole HfO{sub 2} layer (400–600?°C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO{sub 2} films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process.

Soares, G. V., E-mail: gabriel.soares@ufrgs.br; Feijó, T. O. [Instituto de Física, UFRGS, Porto Alegre 91509-900 (Brazil); Baumvol, I. J. R. [Instituto de Física, UFRGS, Porto Alegre 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul 95070-560 (Brazil); Aguzzoli, C. [Universidade de Caxias do Sul, Caxias do Sul 95070-560 (Brazil); Krug, C. [Instituto de Física, UFRGS, Porto Alegre 91509-900 (Brazil); CEITEC S.A., Porto Alegre 91550-000 (Brazil); Radtke, C. [Instituto de Química, UFRGS, Porto Alegre 91509-900 (Brazil)

2014-01-27T23:59:59.000Z

452

Isothermal oxidation behavior of electrospark deposited MCrAlX-type coatings on a Ni-based superalloy  

Science Journals Connector (OSTI)

A MCrAlX-type coating has been prepared by electrospark deposition (ESD) and its isothermal oxidation behavior studied. The results indicate that deposition rate and surface roughness of the coatings increase with increasing spark pulse energy. A splattered porous morphology was observed in the surface layer, and underneath this, a uniform superfine columnar ? phase structure with a column width of about 0.6 ?m. When exposed at 1000 °C, ?-Al2O3 formed rapidly in the early oxidation stage. After 100 h oxidation, a large amount of ?-Al2O3 was still present, and a dense and adherent, thin ?-Al2O3 scale had formed beneath it.

Yu-jiang Xie; Mao-cai Wang

2009-01-01T23:59:59.000Z

453

Chemical composition and temperature dependent performance of ZnO-thin film transistors deposited by pulsed and continuous spray pyrolysis  

SciTech Connect

Zinc oxide thin film transistors (TFTs) deposited by continuous and pulsed spray pyrolysis were investigated to analyze process kinetics which make reduction of process temperature possible. Thus, fluid mechanics, chemical composition, electrical performance, and deposition and annealing temperature were systematically analyzed. It was found that ZnO layers continuously deposited at 360?°C contained zinc oxynitrides, CO{sub 3}, and hydro carbonate groups from pyrolysis of basic zinc acetate. Statistically, every second wurtzite ZnO unit cell contained an impurity atom. The purity and performance of the ZnO-TFTs increased systematically with increasing deposition temperature due to an improved oxidation processes. At 500?°C the zinc to oxygen ratio exceeded a high value of 0.96. Additionally, the ZnO film was not found to be in a stabilized state after deposition even at high temperatures. Introducing additional subsequent annealing steps stabilizes the film and allows the reduction of the overall thermal stress to the substrate. Further improvement of device characteristics was obtained by pulsed deposition which allowed a more effective transport of the by-products and oxygen. A significant reduction of the deposition temperature by 140?°C was achieved compared to the same performance as in continuous deposition mode. The trap density close to the Fermi energy could be reduced by a factor of two to 4?×?10{sup 17}?eV{sup ?1}?cm{sup ?3} due to the optimized combustion process on the surface. The optimization of the deposition processes made the fabrication of TFTs with excellent performance possible. The mobility was high and exceeded 12 cm{sup 2}/V s, the subthreshold slope was 0.3 V dec{sup ?1}, and an on-set close to the ideal value of 0?V was achieved.

Ortel, Marlis; Balster, Torsten; Wagner, Veit [School of Engineering and Science, Jacobs University Bremen, Campus Ring 1, 28759 Bremen (Germany)

2013-12-21T23:59:59.000Z

454

A Simple Apparatus for the Injection of Lithium Aerosol into the Scrape-Off Layer of Fusion Research Devices  

SciTech Connect

A simple device has been developed to deposit elemental lithium onto plasma facing components in the National Spherical Torus Experiment. Deposition is accomplished by dropping lithium powder into the plasma column. Once introduced, lithium particles quickly become entrained in scrape-off layer flow as an evaporating aerosol. Particles are delivered through a small central aperture in a computer-controlled resonating piezoelectric disk on which the powder is supported. The device has been used to deposit lithium both during discharges as well as prior to plasma breakdown. Clear improvements to plasma performance have been demonstrated. The use of this apparatus provides flexibility in the amount and timing of lithium deposition and, therefore, may benefit future fusion research devices.

D. K. Mansfield, A.L Roquemore, H. Schneider, J. Timberlake, H. Kugel, M.G. Bell and the NSTX Research Team

2010-10-11T23:59:59.000Z

455

A Glucose Biosensor Based on Deposition of Glucose Oxidase onto Crystalline Gold Nanoparticle Modified Carbon Nanotube Electrode  

Science Journals Connector (OSTI)

(16) Wu et al. in 2007 fabricated an amperometric glucose biosensor based on multilayer films prepared via layer-by-layer self-assembly of mutiwalled nanotubes (MWNT), Au nanoparticles, and GOD on the Pt electrode with a wide linear range of 0.1?10 mM glucose and a sensitivity of 2.527 ?A/mM,(17) but in that case, the method of fabrication is highly complicated, and due to layer-by-layer deposition, adhesion between MWNT and Au particles is minimal. ... The crystalline nature of the metal particles having average particle size in the range of 5?8 nm dispersed on the MWNT surface is clearly seen from the HRTEM image. ...

Raghavan Baby Rakhi; Kanikrishnan Sethupathi; Sundara Ramaprabhu

2009-02-16T23:59:59.000Z

456

Use of very-high-frequency plasmas to prepare a-Si:H-based triple-junction solar cells at high deposition rates: Annual technical status report, 11 March 1998--11 March 1999  

SciTech Connect

This report describes work performed by Energy Conversion Devices, Inc. (ECD) during this phase of this subcontract. ECD researchers have made significant progress in advancing the very high frequency (VHF), high-rate technology. They demonstrated that 8.0% stable efficiencies can be achieved for a-Si:H cells whose i-layers are prepared at rates near 10 {angstrom}/s using the VHF technique. Presently, there is not a great difference in the performance of a-Si:H cells made using the VHF technique and i-layer deposition rates near 10 {angstrom}/s and that for cells made using the standard 13.56 MHz technique and rates near 1 {angstrom}/s in the same deposition system. In terms of the a-SiGe:H cells, researchers have completed a number of studies of devices with properties appropriate for middle-junction cells-that is, cells without Ag/ZnO back-reflectors having Voc values near 0.75V and Jsc values near 8.0 mA/cm{sup 2} when measured using AM1.5 light filtered using a 530-nm, low-band-pass filter. The stabilized proper ties for these cells prepared at i-layer rates near 10 {angstrom}/s are again similar to a-SiGe:H cells made using the same deposition hardware and the low-rate 13.56 MHz method. Establishing an initial 10.5% for a triple-junction cell whose i-layers are prepared at the high rates sets the baseline for ECD's future studies. The triple-junction cell degradation (10%--13%) with prolonged light soaking is similar to that regularly obtained for cells prepared at low i-layer deposition rates (1 {angstrom}/s). This is important because the use of high-rate methods to prepare i-layers typically leads to less-stable materials and cells. Increasing the buffer-layer deposition rate to 6 {angstrom}/s leads to nearly a 15-min decrease in the total deposition time, whereas the increase in the n-layer and p-layer deposition rates both decrease the total time by 5 and 5.8 min, respectively. Thus, besides the i-layer growth rates, increasing the buffer layer growth rate has the strongest effect on the deposition time of the triple-junction semiconductor structures.

Jones, S.J.; Liu, T.; Tsu, D.; Izu, M.

1999-10-25T23:59:59.000Z

457

Inclined substrate deposition of magnesium oxide for YBCO-coated conductors.  

SciTech Connect

Thin films of YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) were grown on MgO buffered metallic substrates by pulsed laser deposition (PLD). The MgO buffer films, which provide the initial biaxial texture, had been grown on polished Hastelloy C276 (HC) tapes using inclined substrate deposition (ISD). The ISD process is promising for the fabrication of coated superconductor wires because it produces biaxially textured template films on nontextured substrate at high deposition rates. Biaxially aligned MgO films were deposited at deposition rates of 20 to 100 {angstrom}/sec. The buffer films were deposited on these template films before ablation of the YBCO films by PLD. The microstructure was studied by scanning electron microscopy and atomic force microscopy. X-ray pole figure analysis and {phi}- and {omega}-scans were used for texture characterization. Good in- and out-of-plane textures were observed on the ISD MgO films ({approx}1.5 {micro}m thick). The full width at half maximums were 9.2{sup o} for the MgO (002) {phi}-scan and 5.4{sup o} for the {omega}-scan. Cube-on-cube epitaxial growth of yttria-stabilized zirconia (YSZ) and ceria (CeO{sub 2}) films on the ISD MgO films was also achieved by PLD. A superconducting critical temperature of 90 K, with a sharp transition, and transport critical current density of >2.5 x 10{sup 5} A/cm{sup 2} were obtained on a 0.5-{micro}m-thick, 0.5-cm-wide, and 1-cm-long YBCO film with MgO buffer layer at 77 K in self-field.

Ma, B.; Li, M.; Fisher, B. L.; Koritala, R. E.; Dorris, S. E.; Maroni, V. A.; Balachandran, U.

2002-04-26T23:59:59.000Z

458

Apparatus for laser assisted thin film deposition  

DOE Patents (OSTI)

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

Warner, B.E.; McLean, W. II

1996-02-13T23:59:59.000Z

459

Neutron reflectrometry reveals the internal structure of natural organic matter deposited onto an aluminum oxide  

SciTech Connect

Organic carbon (OC) stabilization in soils plays a significant role in the global C cycle, therefore understanding the structure and function of the OC soil mineral interface is of high importance. To study the interface, films of simple OC compounds and natural organic matter (NOM) were deposited onto a soil mineral analogue (Al2O3) using spin coating and were exposed to humidity. The thickness, density and structure of the films were studied using a depth-sensitive, nano-scale technique of neutron reflectometry. A single homogenous layer was observed when NOM and glucose (GL) were adsorbed onto Al2O3. However, when stearic acid (SA) was added to either NOM or GL, separate layers attributed to SA and either NOM or GL were detected. The formation of distinct, immiscible layers is due to insolubility of SA with NOM and GL. In contrast, GL and NOM are both water-soluble, and therefore soluble with each other, forming a homogenous layer on the mineral surface. Our results suggest that the extent of complex layering formed on the OC mineral interface may depend on the relative solubility of the compounds.

Mayes, Melanie [ORNL; Jagadamma, Sindhu [ORNL; Ambaye, Haile Arena [ORNL; Petridis, Loukas [ORNL; Lauter, Valeria [ORNL

2013-01-01T23:59:59.000Z

460

Neutron reflectometry reveals the internal structure of organic compounds deposited on aluminum oxide  

Science Journals Connector (OSTI)

Organic carbon (OC) stabilization in soils plays a significant role in the global C cycle, therefore understanding the structure and function of the OC–soil mineral interface is of high importance. To study the interface, films of simple OC compounds and natural organic matter (NOM) were deposited onto a soil mineral analogue (Al2O3) using spin coating and were exposed to humidity. The thickness, density and structure of the films were studied using a depth-sensitive, nano-scale technique of neutron reflectometry. A single homogenous layer was observed when NOM and glucose (GL) were adsorbed onto Al2O3. However, when stearic acid (SA) was added to either NOM or GL, separate layers attributed to SA and either NOM or GL were detected. The formation of distinct, immiscible layers is due to insolubility of SA with NOM and GL. In contrast, GL and NOM are both water-soluble, and therefore soluble with each other, forming a homogenous layer on the mineral surface. Our results suggest that the extent of complex layering formed on the OC–mineral interface may depend on the relative solubility of the compounds.

Melanie Mayes; Sindhu Jagadamma; Haile Ambaye; Loukas Petridis; Valeria Lauter

2013-01-01T23:59:59.000Z

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461

Source-attribution for atmospheric mercury deposition: Where does the mercury in mercury deposition come from?  

E-Print Network (OSTI)

1 Source-attribution for atmospheric mercury deposition: Where does the mercury in mercury of the Mercury Working Group, Office of Air Quality, Indiana Department of Environmental Management (IDEM) April 21, 2005 #12;2 For mercury, how important is atmospheric deposition relative to other loading

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