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Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
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1

The limnology of L Lake: Results of the L-Lake monitoring program, 1986--1989  

SciTech Connect (OSTI)

L Lake was constructed in 1985 on the upper regions of Steel Creek, SRS to mitigate the heated effluents from L Reactor. In addition to the NPDES permit specifications (Outfall L-007) for the L-Reactor outfall, DOE-SR executed an agreement with the South Carolina Department of Health and Environmental Control (SCDHEC), that thermal effluents from L-Reactor will not substantially alter ecosystem components in the approximate lower half of L Lake. This region should be inhabited by Balanced (Indigenous) Biological Communities (BBCs) in accordance with Section 316(a) of the Pollution Control (Clean Water) Act (Public Law 92-500). In response to this requirement the Environmental Sciences Section/Ecology Group initiated a comprehensive biomonitoring program which documented the development of BBCs in L Lake from January 1986 through December 1989. This report summarizes the principal results of the program with regards to BBC compliance issues and community succession in L Lake. The results are divided into six sections: water quality, macronutrients, and phytoplankton, aquatic macrophytes, zooplankton, benthic macroinvertebrates, fish, and community succession. One of the prime goals of the program was to detect potential reactor impacts on L Lake.

Bowers, J.A.

1991-12-15T23:59:59.000Z

2

Steel Creek fish, L-Lake/Steel Creek Biological Monitoring Program, January 1986--December 1991  

SciTech Connect (OSTI)

The Savannah River Site (SRS) encompasses 300 sq mi of the Atlantic Coastal plain in west-central South Carolina. The Savannah River forms the western boundary of the site. Five major tributaries of the Savannah River -- Upper Three Runs Creek, Four Mile Creek, Pen Branch, Steel Creek, and Lower Three Runs Creek -- drain the site. All but Upper Three Runs Creek receive, or in the past received, thermal effluents from nuclear production reactors. In 1985, L Lake, a 400-hectare cooling reservoir, was built on the upper reaches of Steel Creek to receive effluent from the restart of L-Reactor, and protect the lower reaches from thermal impacts. The lake has an average width of approximately 600 m and extends along the Steel Creek valley approximately 7000 m from the dam to the headwaters. Water level is maintained at a normal pool elevation of 58 m above mean sea level by overflow into a vertical intake tower that has multilevel discharge gates. The intake tower is connected to a horizontal conduit that passes through the dam and releases water into Steel Creek. The Steel Creek Biological Monitoring Program was designed to meet environmental regulatory requirements associated with the restart of L-Reactor and complements the Biological Monitoring Program for L Lake. This extensive program was implemented to address portions of Section 316(a) of the Clean Water Act. The Department of Energy (DOE) must demonstrate that the operation of L-Reactor will not significantly alter the established aquatic ecosystems.

Sayers, R.E. Jr.; Mealing, H.G. III [Normandeau Associates, Inc., New Ellenton, SC (United States)

1992-04-01T23:59:59.000Z

3

Advanced sluicing system test report for single shell tank waste retrieval integrated testing  

SciTech Connect (OSTI)

This document describes the testing performed by ARD Environmental, Inc., and Los Alamos Technical Associates of the LATA/ARD Advanced Sluicing System, in support of ACTR Phase 1 activities. Testing was to measure the impact force and pressures of sluicing streams at three different distances, as measured by the Government supplied load cell. Simulated sluicing of large simulated salt cake and hard pan waste coupons was also performed. Due to operational difficulties experienced with the Government supplied load cell, no meaningful results with respect to sluice stream impact pressure distribution or stream coherence were obtained. Sluice testing using 3000 psi salt cake simulants measured waste retrieval rates of approximately 12 Ml/day (17.6 ft{sup 3}/hr). Rates as high as 314 m{sup 3}/day (463 ft{sup 3}/hr) were measured against the lower strength salt cake simulants.

Berglin, E.J.

1997-05-29T23:59:59.000Z

4

Project management plan for project W-320, tank 241-C-106 sluicing  

SciTech Connect (OSTI)

This Project Management Plan establishes the organization, plans, and systems for management of Project W-320 as defined in DOE Order 4700.1, Project Management System (DOE 1987). The sluicing is for retrieving high-heat waste from single shell tank 241-C-106.

Leliefeld, K.W.

1996-02-02T23:59:59.000Z

5

Steel Creek fish: L-Lake/Steel Creek Biological Monitoring Program, January 1986--December 1987  

SciTech Connect (OSTI)

Fish samples were collected from Steel Creek during 1986 and 1987 following the impoundment of the headwaters of the stream to form L-Lake, a cooling reservoir for L-Reactor which began operating late in 1985. Electrofishing and ichthyoplankton sample stations were located throughout the creek. Fykenetting sample stations were located in the creek mouth and just above the Steel Creek swamp. Larval fish and fish eggs were collected with 0.5 m plankton nets. Multivariate analysis of the electrofishing data suggested that the fish assemblages in Steel Creek exhibited structural differences associated with proximity to L-Lake, and habitat gradients of current velocity, depth, and canopy cover. The Steel Creek corridor, a lotic reach beginning at the base of the L-Lake embankment was dominated by stream species and bluegill. The delta/swamp, formed where Steel Creek enters the Savannah River floodplain, was dominated by fishes characteristic of slow flowing waters and heavily vegetated habitats. The large channel draining the swamp supported many of the species found in the swamp plus riverine and anadromous forms.

Paller, M.H.; Heuer, J.H.; Kissick, L.A.

1988-03-01T23:59:59.000Z

6

Project W-320, 241-C-106 sluicing: Construction specification W-320-C2  

SciTech Connect (OSTI)

This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

Bailey, J.W.

1998-07-20T23:59:59.000Z

7

Project W-320, 241-C-106 sluicing: Construction specification W-320-C5  

SciTech Connect (OSTI)

This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

Bailey, J.W.

1998-07-20T23:59:59.000Z

8

Project W-320, 241-C-106 sluicing: Construction specification W-320-C7  

SciTech Connect (OSTI)

This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

Bailey, J.W.

1998-07-20T23:59:59.000Z

9

Project W-320, 241-C-106 sluicing: Construction specification W-320-C6  

SciTech Connect (OSTI)

This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

Bailey, J.W.

1998-07-20T23:59:59.000Z

10

Project W-320, 241-C-106 sluicing: Construction specification W-320-C1  

SciTech Connect (OSTI)

Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

Bailey, J.W.

1998-07-20T23:59:59.000Z

11

Project management plan for Project W-320, Tank 241-C-106 sluicing. Revision 2  

SciTech Connect (OSTI)

A major mission of the US Department of Energy (DOE) is the permanent disposal of Hanford Site defense wastes by utilizing safe, environmentally acceptable, and cost-effective disposal methods that meet applicable regulations. The Tank Waste Remediation System (TWRS) Program was established at the Hanford Site to manage and control activities specific to the remediation of safety watch list tanks, including high-heat-producing tanks, and for the ultimate characterization, retrieval, pretreatment, and disposal of the low- and high-level fractions of the tank waste. Project W-320, Tank 241-C-106 Sluicing, provides the methodology, equipment, utilities, and facilities necessary for retrieving the high-heat waste from single-shell tank (SST) 24-C-106. Project W-320 is a fiscal year (FY) 1993 expense-funded major project, and has a design life of 2 years. Retrieval of the waste in tank 241-C-106 will be accomplished through mobilization of the sludge into a pumpable slurry using past-practice sluicing. The waste is then transferred directly to a double-shell tank for interim storage, subsequent pretreatment, and eventual disposal. A detailed description of the management organization and responsibilities of all participants is presented in this document.

Phillips, D.R.

1994-07-01T23:59:59.000Z

12

Origins of volatile organic compounds emerging from tank 241-C-106 during sluicing  

SciTech Connect (OSTI)

Unexpectedly high concentrations of inorganic gases and volatile organic compounds (VOC) were released from the ventilation stack of tank 241-C-106 during sluicing operations on November 18, 1998. Workers experienced serious discomfort. They reported an obnoxious acrid odor and the 450 ppm VOC in ventilation stack 296-C-006 exceeded the level approved in the air discharge permit. Consequently, the operation was terminated. Subsequent analyses of samples collected opportunistically from the stack indicated many organic compounds including heptenes, heptanones, and normal paraffin hydrocarbons (NPH) and their remnants were present. Subsequently, a process test designed to avoid unnecessary worker exposure and enable collection of analytical samples from the stack, the breathing area, and the receiver tank was conducted on December 16, 1998. The samples obtained during that operation, in which the maximum VOC content of the stack was approximately 35 ppm, have been analyzed by teams at Pacific Northwest National Laboratory and Special Analytic Services (SAS). This report examines the results of these investigations. Future revisions of the report will examine the analytical results obtained for samples collected during sluicing operations in March. This report contains the available evidence about the source term for these emissions. Chapter 2 covers characterization work, including historical information about the layers of waste in the tank, the location of organic compounds in these layers, the total organic carbon (TOC) content and the speciation of organic compounds. Chapter 3 covers the data for the samples from the ventilation stack, which has the highest concentrations of organic compounds. Chapter 4 contains an interpretation of the information connecting the composition of the organic emissions with the composition of the original source term. Chapter 5 summarizes the characterization work, the sample data, and the interpretation of the results.

STAUFFER, L.A.

1999-06-02T23:59:59.000Z

13

Steel Creek primary producers: Periphyton and seston, L-Lake/Steel Creek Biological Monitoring Program, January 1986--December 1991  

SciTech Connect (OSTI)

The Savannah River Site (SRS) encompasses 300 sq mi of the Atlantic Coastal Plain in west-central South Carolina. Five major tributaries of the Savannah River -- Upper Three Runs Creek, Four Mile Creek, Pen Branch, Steel Creek, and Lower Three Runs Creek -- drain the site. In 1985, L Lake, a 400-hectare cooling reservoir, was built on the upper reaches of Steel Creek to receive effluent from the restart of L-Reactor and to protect the lower reaches from thermal impacts. The Steel Creek Biological Monitoring Program was designed to assess various components of the system and identify and changes due to the operation of L-Reactor or discharge from L Lake. An intensive ecological assessment program prior to the construction of the lake provided baseline data with which to compare data accumulated after the lake was filled and began discharging into the creek. The Department of Energy must demonstrate that the operation of L-Reactor will not significantly alter the established aquatic ecosystems. This report summarizes the results of six years` data from Steel Creek under the L-Lake/Steel Creek Monitoring Program. L Lake is discussed separately from Steel Creek in Volumes NAI-SR-138 through NAI-SR-143.

Bowers, J.A. [Westinghouse Savannah River Co., Aiken, SC (United States); Toole, M.A.; van Duyn, Y. [Normandeau Associates Inc., New Ellenton, SC (United States)

1992-02-01T23:59:59.000Z

14

Tank vapor sampling and analysis data package for tank 241-C-106 waste retrieval sluicing system process test phase III  

SciTech Connect (OSTI)

This data package presents sampling data and analytical results from the March 28, 1999, vapor sampling of Hanford Site single-shell tank 241-C-106 during active sluicing. Samples were obtained from the 296-C-006 ventilation system stack and ambient air at several locations. Characterization Project Operations (CPO) was responsible for the collection of all SUMMATM canister samples. The Special Analytical Support (SAS) vapor team was responsible for the collection of all triple sorbent trap (TST), sorbent tube train (STT), polyurethane foam (PUF), and particulate filter samples collected at the 296-C-006 stack. The SAS vapor team used the non-electrical vapor sampling (NEVS) system to collect samples of the air, gases, and vapors from the 296-C-006 stack. The SAS vapor team collected and analyzed these samples for Lockheed Martin Hanford Corporation (LMHC) and Tank Waste Remediation System (TWRS) in accordance with the sampling and analytical requirements specified in the Waste Retrieval Sluicing System Vapor Sampling and Analysis Plan (SAP) for Evaluation of Organic Emissions, Process Test Phase III, HNF-4212, Rev. 0-A, (LMHC, 1999). All samples were stored in a secured Radioactive Materials Area (RMA) until the samples were radiologically released and received by SAS for analysis. The Waste Sampling and Characterization Facility (WSCF) performed the radiological analyses. The samples were received on April 5, 1999.

LOCKREM, L.L.

1999-08-13T23:59:59.000Z

15

Optical NAND gate  

SciTech Connect (OSTI)

An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Raring, James (Goleta, CA); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-08-09T23:59:59.000Z

16

Optical XOR gate  

DOE Patents [OSTI]

An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Vawter, G. Allen

2013-11-12T23:59:59.000Z

17

Optical NOR gate  

DOE Patents [OSTI]

An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-09-06T23:59:59.000Z

18

Advanced insulated gate bipolar transistor gate drive  

DOE Patents [OSTI]

A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

Short, James Evans (Monongahela, PA); West, Shawn Michael (West Mifflin, PA); Fabean, Robert J. (Donora, PA)

2009-08-04T23:59:59.000Z

19

Cardiac gated ventilation  

SciTech Connect (OSTI)

There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. The authors evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50 msec scan aperture. Multi slice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. The authors observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a non-failing model of the heart.

Hanson, C.W. III [Hospital of the Univ. of Pennsylvania, Philadelphia, PA (United States). Dept. Anesthesia; Hoffman, E.A. [Univ. of Iowa College of Medicine, Iowa City, IA (United States). Div. of Physiologic Imaging

1995-12-31T23:59:59.000Z

20

Golden Gate Park Marina Blvd.  

E-Print Network [OSTI]

St. Eureka S.VanNessAve. M arket St. Broadway St. To Golden Gate Bridge H ow ard St. Folsom St. Bryant St. 10 North / Golden Gate Bridge 2. Exit I­280 North toward Downtown San Francisco 3. Exit Mariposa St. toward80 280 Presidio Golden Gate Park Lincoln Park Buena Vista Park 101 101 101 101 1 1 Marina Blvd. Bay

Derisi, Joseph

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Penn State DOE GATE Program  

SciTech Connect (OSTI)

The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

Anstrom, Joel

2012-08-31T23:59:59.000Z

22

Developing Language Processing Components with GATE  

E-Print Network [OSTI]

Developing Language Processing Components with GATE (a User Guide) For GATE version 3 beta 1 (July.3 Troubleshooting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.4 [D] Get Started

Maynard, Diana

23

Non-Hermitian quantum gates are more common than Hermitian quantum gates  

E-Print Network [OSTI]

Most of the frequently used quantum gates (e.g., NOT, Hadamard, CNOT, SWAP, Toffoli, Fredkin and Pauli gates) are self-inverse (Hermitian). However, with a simple minded argument it is established that most of the allowed quantum gates are non-Hermitian (non-self-inverse). It is also shown that the % of non-Hermitian gates increases with the dimension. For example, 58.33% of the 2-qubit gates, 98.10% of the 3-qubit gates and 99.99% of the 4-qubit gates are non-Hermitian. As classical reversible gates are essentially permutation gates so the above statistics is strictly valid for classical reversible gates. Further, since Hermiticity is not of much interest in context of the classical reversible gate, hence the result implies that most of the allowed classical reversible gates are non-self-inverse.

Anirban Pathak

2013-09-16T23:59:59.000Z

24

Single qubit, two qubit gates and no signalling principle  

E-Print Network [OSTI]

In this work we investigate that whether one can construct single and two qubit gates for arbitrary quantum states from the principle of no signalling. We considered the problem for Pauli gates, Hadamard gate, C-Not gate.

Indranil Chakrabarty

2009-01-31T23:59:59.000Z

25

Composite two-qubit quantum gates  

E-Print Network [OSTI]

We design composite two-qubit gates, based on the Ising-type interaction. The gates are robust against systematic errors in the qubits' interaction strength and the gate's implementation time. We give composite sequences, which cancel the error up to 6th order, and give a method to achieve even higher accuracy. Our sequences can compensate either relative or absolute errors. For relative error compensation the number of the ingredient gates grows linearly with the desired accuracy, while for absolute compensation only two gates are required to achieve infinitely accurate gates. We also consider an ion-trap implementation of our composite gates, where our sequences achieve simultaneous cancellation of the error in both the pulse area and the detuning.

Svetoslav S. Ivanov; Nikolay V. Vitanov

2015-03-30T23:59:59.000Z

26

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Gate Oxide Formation in Real Time Looking at Transistor Gate Oxide Formation in Real Time Print Wednesday, 25 June 2008 00:00 The oxide gate layer is critical to every transistor,...

27

Quantum logic gates for superconducting resonator qudits  

SciTech Connect (OSTI)

We study quantum information processing using superpositions of Fock states in superconducting resonators as quantum d-level systems (qudits). A universal set of single and coupled logic gates is theoretically proposed for resonators coupled by superconducting circuits of Josephson junctions. These gates use experimentally demonstrated interactions and provide an attractive route to quantum information processing using harmonic oscillator modes.

Strauch, Frederick W. [Williams College, Williamstown, Massachusetts 01267 (United States)

2011-11-15T23:59:59.000Z

28

Automatically closing swing gate closure assembly  

DOE Patents [OSTI]

A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

Chang, Shih-Chih (Richland, WA); Schuck, William J. (Richland, WA); Gilmore, Richard F. (Kennewick, WA)

1988-01-01T23:59:59.000Z

29

GATE Center of Excellence at UAB in Lightweight Materials for...  

Broader source: Energy.gov (indexed) [DOE]

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications 2011 DOE...

30

PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR 2009 DOE Hydrogen Program and...

31

GATE Center of Excellence at UAB in Lightweight Materials for...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

& Publications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight Materials for...

32

Vehicle Technologies Office Merit Review 2014: GATE Center of...  

Broader source: Energy.gov (indexed) [DOE]

GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit. ti026vaidya2014p.pdf More Documents & Publications GATE...

33

Penn State DOE Graduate Automotive Technology Education (Gate...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems Penn State DOE Graduate Automotive Technology Education (Gate)...

34

University of Illinois at Urbana-Champaign's GATE Center for...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel...

35

GATE Center of Excellence at UAB in Lightweight Materials for...  

Broader source: Energy.gov (indexed) [DOE]

vaidya.pdf More Documents & Publications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight...

36

Gating of Permanent Molds for ALuminum Casting  

SciTech Connect (OSTI)

This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

David Schwam; John F. Wallace; Tom Engle; Qingming Chang

2004-03-30T23:59:59.000Z

37

A Stochastic Approach for the Analysis of Fault Trees with Priority AND Gates  

E-Print Network [OSTI]

dependency gate PAND priority AND gate SEQ sequence enforcing gate WSP warm spare gate CSP cold spare gate time [1]. Failures can be disastrous for systems such as chemical plants, nuclear reactors, airplane gates that include the warm spare gate (WSP) and cold spare gate (CSP), and the functional dependency

Han, Jie

38

Locking apparatus for gate valves  

DOE Patents [OSTI]

A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing futher movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

Fabyan, Joseph (Livermore, CA); Williams, Carl W. (Manteca, CA)

1988-01-01T23:59:59.000Z

39

Graduate Automotive Technology Education (GATE) Center  

SciTech Connect (OSTI)

The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

Jeffrey Hodgson; David Irick

2005-09-30T23:59:59.000Z

40

Digital gate pulse generator for cycloconverter control  

DOE Patents [OSTI]

The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

Klein, Frederick F. (Monroeville, PA); Mutone, Gioacchino A. (Pleasant Hills, PA)

1989-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Gate potential control of nanofluidic devices  

E-Print Network [OSTI]

The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in ...

Le Coguic, Arnaud

2005-01-01T23:59:59.000Z

42

Yuanmingyuan East Gate of Peking University  

E-Print Network [OSTI]

Dingxiangyuan Cafeteria SupermarketI Parking 32 Northeast Gate C Building C Swimming Hall East Playground and New Energy Technology 32 Institute of Education Schools & Departments A Foreign Student Affairs

Gu, Jin

43

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

44

Gate fidelity fluctuations and quantum process invariants  

SciTech Connect (OSTI)

We characterize the quantum gate fidelity in a state-independent manner by giving an explicit expression for its variance. The method we provide can be extended to calculate all higher order moments of the gate fidelity. Using these results, we obtain a simple expression for the variance of a single-qubit system and deduce the asymptotic behavior for large-dimensional quantum systems. Applications of these results to quantum chaos and randomized benchmarking are discussed.

Magesan, Easwar; Emerson, Joseph [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Blume-Kohout, Robin [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2011-07-15T23:59:59.000Z

45

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Gate: the Construction of the Golden Gate Bridge and HighwayCommittee on Golden Gate Bridge and Highway District,versus the Golden Gate Bridge . . . . . . . . . . . . . . .

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

46

Voltage-gated Ion Channels and Gating Modifier Toxins William A. Catterall,* Sandrine Cestle,  

E-Print Network [OSTI]

;2 Abstract Voltage-gated sodium, calcium, and potassium channels generate electrical signals required and a pore loop. Their pores are formed by the S5/S6 segments and the pore loop between them and are gated and participate in calcium signaling pathways in nonexcitable cells. Because of their importance in many aspects

Paris-Sud XI, Université de

47

The Defeat of the Golden Gate Authority: Regional Planning and Local Power  

E-Print Network [OSTI]

Regional Politics and the Golden Gate Bridge, Philadelphia:Politics and the Golden Gate Bridge, won the Abel WolmanBridge and the Golden Gate Bridge. Moreover, interregional

Dyble, Louise Nelson

2012-01-01T23:59:59.000Z

48

Heralded quantum gates with integrated error detection in optical cavitites  

E-Print Network [OSTI]

We propose and analyze heralded quantum gates between qubits in optical cavities. They employ an auxiliary qubit to report if a successful gate occurred. In this manner, the errors, which would have corrupted a deterministic gate, are converted into a non-unity probability of success: once successful the gate has a much higher fidelity than a similar deterministic gate. Specifically, we describe that a heralded , near-deterministic controlled phase gate (CZ-gate) with the conditional error arbitrarily close to zero and the success probability that approaches unity as the cooperativity of the system, C, becomes large. Furthermore, we describe an extension to near-deterministic N- qubit Toffoli gate with a favorable error scaling. These gates can be directly employed in quantum repeater networks to facilitate near-ideal entanglement swapping, thus greatly speeding up the entanglement distribution.

J. Borregaard; P. Kmr; E. M. Kessler; A. S. Srensen; M. D. Lukin

2015-01-05T23:59:59.000Z

49

Engineering integrated photonics for heralded quantum gates  

E-Print Network [OSTI]

Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate implementation of the optimal known gate design which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show that device performance is more sensitive to the small deviations in the coupler reflectivity, arising due to the tolerance values of the fabrication method, than phase variations in the circuit. The mode fidelity was also shown to be less sensitive to reflectivity and phase errors than process fidelity. Our best device achieves a fidelity of 0.931+/-0.001 with the ideal 4x4 unitary circuit and a process fidelity of 0.680+/-0.005 with the ideal computational-basis process.

T. Meany; D. N. Biggerstaff; M. A. Broome; A. Fedrizzi; M. Delanty; A. Gilchrist; G. D. Marshall; M. J. Steel; A. G. White; M. J. Withford

2015-02-11T23:59:59.000Z

50

Sandia National Laboratories: i-GATE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1development Sandia,evaluatingfullhigher-performancestoragei-GATE ECIS and i-GATE:

51

Effect of Oxygen on Ni-Silicided FUSI Metal Gate  

E-Print Network [OSTI]

Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

Yu, H.P.

52

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 range (1-2...

53

abnormal sensorimotor gating: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the bilayer...

54

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams 9 Accomplishments and Progress: GATE Directly Funded Students (2005-2011) GATE SCHOLAR...

55

Electroluminescence in ion gel gated organic polymer semiconductor transistors  

E-Print Network [OSTI]

This thesis reports the light emission in ion gel gated, thin film organic semiconductor transistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit...

Bhat, Shrivalli

2011-07-12T23:59:59.000Z

56

Negative quantum capacitance in graphene nanoribbons with lateral gates  

E-Print Network [OSTI]

Negative quantum capacitance in graphene nanoribbons with lateral gates R. Reiter1, , U. Derra2 , S numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate

Florian, Libisch

57

Clustering of cyclic-nucleotide-gated channels in olfactory cilia  

E-Print Network [OSTI]

Clustering of cyclic-nucleotide-gated channels in olfactory cilia Richard J. Flannery* , Donald A channel clusters in olfactory cilia Key words: olfaction, receptor neuron, cyclic-nucleotide-gated channel of olfactory signal transduction, including a high density of cyclic-nucleotide-gated (CNG) channels. CNG

French, Donald A.

58

Quantum Logic Gates using q-deformed Oscillators  

E-Print Network [OSTI]

We show that the quantum logic gates, {\\it viz.} the single qubit Hadamard and Phase Shift gates, can also be realised using q-deformed angular momentum states constructed via the Jordan-Schwinger mechanism with two q-deformed oscillators. {\\it Keywords :} quantum logic gates ; q-deformed oscillators ; quantum computation {\\it PACS:} 03.67.Lx ; 02.20.Uw

Debashis Gangopadhyay; Mahendra Nath Sinha Roy

2006-07-14T23:59:59.000Z

59

Accuracy and Consistency of Respiratory Gating in Abdominal Cancer Patients  

SciTech Connect (OSTI)

Purpose: To evaluate respiratory gating accuracy and intrafractional consistency for abdominal cancer patients treated with respiratory gated treatment on a regular linear accelerator system. Methods and Materials: Twelve abdominal patients implanted with fiducials were treated with amplitude-based respiratory-gated radiation therapy. On the basis of daily orthogonal fluoroscopy, the operator readjusted the couch position and gating window such that the fiducial was within a setup margin (fiducial-planning target volume [f-PTV]) when RPM indicated beam-ON. Fifty-five pre- and post-treatment fluoroscopic movie pairs with synchronized respiratory gating signal were recorded. Fiducial motion traces were extracted from the fluoroscopic movies using a template matching algorithm and correlated with f-PTV by registering the digitally reconstructed radiographs with the fluoroscopic movies. Treatment was determined to be accurate if 50% of the fiducial area stayed within f-PTV while beam-ON. For movie pairs that lost gating accuracy, a MATLAB program was used to assess whether the gating window was optimized, the external-internal correlation (EIC) changed, or the patient moved between movies. A series of safety margins from 0.5 mm to 3 mm was added to f-PTV for reassessing gating accuracy. Results: A decrease in gating accuracy was observed in 44% of movie pairs from daily fluoroscopic movies of 12 abdominal patients. Three main causes for inaccurate gating were identified as change of global EIC over time (?43%), suboptimal gating setup (?37%), and imperfect EIC within movie (?13%). Conclusions: Inconsistent respiratory gating accuracy may occur within 1 treatment session even with a daily adjusted gating window. To improve or maintain gating accuracy during treatment, we suggest using at least a 2.5-mm safety margin to account for gating and setup uncertainties.

Ge, Jiajia; Santanam, Lakshmi; Yang, Deshan [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)] [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States); Parikh, Parag J., E-mail: pparikh@radonc.wustl.edu [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)

2013-03-01T23:59:59.000Z

60

Gate-controlled ultraviolet photo-etching of graphene edges  

SciTech Connect (OSTI)

The chemical reactivity of graphene under ultraviolet (UV) light irradiation is investigated under positive and negative gate electric fields. Graphene edges are selectively etched when negative gate voltages are applied while the reactivity is significantly suppressed for positive gate voltages. Oxygen adsorption onto graphene is significantly affected by the Fermi level of the final state achieved during previous electrical measurements. UV irradiation after negative-to-positive gate sweeps causes predominant oxygen desorption while UV irradiation after gate sweeps in the opposite direction causes etching of graphene edges.

Mitoma, Nobuhiko; Nouchi, Ryo [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)] [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)

2013-11-11T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Classification of transversal gates in qubit stabilizer codes  

E-Print Network [OSTI]

This work classifies the set of diagonal gates that can implement a single or two-qubit transversal logical gate for qubit stabilizer codes. We show that individual physical gates on the underlying qubits that compose the code are restricted to have entries of the form $e^{i \\pi c/2^k}$ along their diagonal, resulting in a similarly restricted class of logical gates that can be implemented in this manner. Moreover, we show that all diagonal logical gates that can be implemented transversally by individual physical diagonal gates must belong to the Clifford hierarchy. Furthermore, we can use this result to prove a conjecture about transversal gates made by Zeng et al. in 2007.

Jonas T. Anderson; Tomas Jochym-O'Connor

2014-09-29T23:59:59.000Z

62

Arbitrary two-qubit computation in 23 elementary gates  

SciTech Connect (OSTI)

We address the problem of constructing quantum circuits to implement an arbitrary two-qubit quantum computation. We pursue circuits without ancilla qubits and as small a number of elementary quantum gates as possible. Our lower bound for worst-case optimal two-qubit circuits calls for at least 17 gates: 15 one-qubit rotations and 2 controlled-NOT (CNOT) gates. We also constructively prove a worst-case upper bound of 23 elementary gates, of which at most four (CNOT gates) entail multiqubit interactions. Our analysis shows that synthesis algorithms suggested in previous work, although more general, entail larger quantum circuits than ours in the special case of two qubits. One such algorithm has a worst case of 61 gates, of which 18 may be CNOT gates.

Bullock, Stephen S.; Markov, Igor L. [Department of Mathematics, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA (United States); Mathematical and Computational Sciences Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8910, USA (United States); Department of Electrical Engineering and Computer Science, The University of Michigan, 1301 Beal Avenue-EECS, Ann Arbor, Michigan 48109-2122, USA (United States)

2003-07-01T23:59:59.000Z

63

Method for voltage-gated protein fractionation  

DOE Patents [OSTI]

We report unique findings on the voltage dependence of protein exclusion from the pores of nanoporous polymer exclusion membranes. The pores are small enough that proteins are excluded from passage with low applied electric fields, but increasing the field enables proteins to pass through. The requisite field necessary for a change in exclusion is protein-specific with a correlation to protein size. The field-dependence of exclusion is important to consider for preconcentration applications. The ability to selectively gate proteins at exclusion membranes is also a promising means for manipulating and characterizing proteins. We show that field-gated exclusion can be used to selectively remove proteins from a mixture, or to selectively trap protein at one exclusion membrane in a series.

Hatch, Anson (Tracy, CA); Singh, Anup K. (Danville, CA)

2012-04-24T23:59:59.000Z

64

An elementary optical gate for expanding entanglement web  

E-Print Network [OSTI]

We introduce an elementary optical gate for expanding polarization entangled W states, in which every pair of photons are entangled alike. The gate is composed of a pair of 50:50 beamsplitters and ancillary photons in the two-photon Fock state. By seeding one of the photons in an $n$-photon W state into this gate, we obtain an $(n+2)$-photon W state after post-selection. This gate gives a better efficiency and a simpler implementation than previous proposals for $\\rm W$-state preparation.

Toshiyuki Tashima; Sahin Kaya Ozdemir; Takashi Yamamoto; Masato Koashi; Nobuyuki Imoto

2008-03-13T23:59:59.000Z

65

Vehicle Technologies Office Merit Review 2014: GATE Center of...  

Broader source: Energy.gov (indexed) [DOE]

GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit. lm081vaidya2014o.pdf More Documents & Publications...

66

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for...

67

High Temperature, High Voltage Fully Integrated Gate Driver Circuit  

Broader source: Energy.gov (indexed) [DOE]

temperature gate drive is being developed for use with future wide band gap (silicon carbide and gallium nitride) switching devices. * Universal drive that is capable of driving...

68

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...  

Office of Environmental Management (EM)

Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate...

69

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams GATE courses (some newly developed, some based on tailoring content in existing...

70

Sandia National Laboratories: ECIS and i-GATE: Innovation Hub...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

support system to accelerate the commercialization of innovative technologies related to green transportation and clean energy. There are now eight i-GATE clients developing fuel...

71

Gate Fidelities, Quantum Broadcasting, and Assessing Experimental Realization  

E-Print Network [OSTI]

We relate gate fidelities of experimentally realized quantum operations to the broadcasting property of their ideal operations, and show that the more parties a given quantum operation can broadcast to, the higher gate fidelities of its experimental realization are in general. This is shown by establishing the correspondence between two operational quantities, quantum state shareability and quantum broadcasting. This suggests that, to assess an experimental realization using gate fidelities, the worst case of realization such as noisy operations should be taken into account and then compared to obtained gate fidelities. In addition, based on the correspondence, we also translate results in quantum state shareability to their counterparts in quantum operations.

Hyang-Tag Lim; Young-Sik Ra; Yong-Su Kim; Yoon-Ho Kim; Joonwoo Bae

2011-06-29T23:59:59.000Z

72

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene  

E-Print Network [OSTI]

Tunable Bandgap in Bilayer Graphene Yuanbo Zhang* 1 , Tsung-gate-tunable bandgap in graphene bilayers with magnitude asbands. In two- dimensional graphene bilayers this bandgap

Zhang, Yuanbo

2010-01-01T23:59:59.000Z

73

Cavity-QED-based quantum phase gate  

E-Print Network [OSTI]

are detuned by an amount D from the cavity mode 1, i.e., vbc5n11D . A quantum phase gate with a p phase shift is implemented if the atom in its ground state uc& passes through the cavity such that ~1! the detuning D is equal to g2, and ~2! the interaction...- lowing. The effective Hamiltonian for the interaction, in the di- pole and rotating-wave approximations, is H5H01H1 , ~3! where H05\

Zubairy, M. Suhail; Kim, M.; Scully, Marlan O.

2003-01-01T23:59:59.000Z

74

Gate-teleportation-based blind quantum computation  

E-Print Network [OSTI]

Blind quantum computation (BQC) is a model in which a computation is performed on a server by a client such that the server is kept blind about the input, the algorithm, and the output of the computation. Here we layout a general framework for BQC which, unlike the previous BQC models, does not constructed on specific computational model. A main ingredient of our construction is gate teleportation. We demonstrate that our framework can be straightforwardly implemented on circuit-based models as well as measurement-based models of quantum computation. We illustrate our construction by showing that universal BQC is possible on correlation-space measurement-based quantum computation models.

Mear M. R. Koochakie

2014-12-25T23:59:59.000Z

75

David A Gates | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to UserProduct: CrudeOffice ofINL is aID Service FirstMeetingsA Gates

76

Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode pairs.  

SciTech Connect (OSTI)

We demonstrate an optical gate architecture using electro-absorption modulator/photodiode pairs to perform AND and NOT functions. Optical bandwidth for both gates reach 40 GHz. Also shown are AND gate waveforms at 40 Gbps.

Tauke-Pedretti, Anna; Overberg, Mark E.; Skogen, Erik J.; Alford, Charles Fred; Sullivan, Charles Thomas; Vawter, Gregory Allen; Peake, Gregory Merwin; Torres, David L.

2010-06-01T23:59:59.000Z

77

Modeling gated neutron images of THD capsules  

SciTech Connect (OSTI)

Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

Wilson, Douglas Carl [Los Alamos National Laboratory; Grim, Gary P [Los Alamos National Laboratory; Tregillis, Ian L [Los Alamos National Laboratory; Wilke, Mark D [Los Alamos National Laboratory; Morgan, George L [Los Alamos National Laboratory; Loomis, Eric N [Los Alamos National Laboratory; Wilde, Carl H [Los Alamos National Laboratory; Oertel, John A [Los Alamos National Laboratory; Fatherley, Valerie E [Los Alamos National Laboratory; Clark, David D [Los Alamos National Laboratory; Schmitt, Mark J [Los Alamos National Laboratory; Merrill, Frank E [Los Alamos National Laboratory; Wang, Tai - Sen F [Los Alamos National Laboratory; Danly, Christopher R [Los Alamos National Laboratory; Batha, Steven H [Los Alamos National Laboratory; Patel, M [LLNL; Sepke, S [LLNL; Hatarik, R [LLNL; Fittinghoff, D [LLNL; Bower, D [LLNL; Marinak, M [LLNL; Munro, D [LLNL; Moran, M [LLNL; Hilko, R [NSTEC; Frank, M [LLNL; Buckles, R [NSTEC

2010-01-01T23:59:59.000Z

78

Sizing sliding gate valves for steam service  

SciTech Connect (OSTI)

Sliding gate valves have been used in thousands of applications during the past 40 yr. While steam control is a common application for these valves, thy are also used to control other gases and liquids. The sliding gate design provides straight-through flow, which minimizes turbulence, vibration, and noise. Seats are self-cleaning and self-lapping to provide a tight, long-lasting shutoff. A correctly sized valve is essential for accurate control. Valve size should be determined by service and system requirements, not by the size of the existing pipeline. Sizing a valve on the basis of pipeline size usually results in an oversized valve and poor control. Generally, regulator size is smaller than pipe size. Whenever complete information is known (inlet pressure, outlet pressure, or pressure drop, and required flow), determine the valve flow coefficient (C{sub v}) using the equations in ANSI/ISA S75.01 or a flow sizing chart. Tables of values for various types of valves are available from manufacturers. However, when complete system requirements are not known, valve oversizing is prevented by determining the design capacity of piping downstream from the valve. The valve should not be sized to pass more flow than the maximum amount the pipe can handle at a reasonable velocity. An example calculation is given.

Bollinger, R. [Jordan Value, Cincinnati, OH (United States)

1995-11-06T23:59:59.000Z

79

A p-cell approach to integer gate sizing  

E-Print Network [OSTI]

cell (p-cell) approach to the generation of layouts of standard gates is presented. The use of constant delay model for gate delay estimation is proposed which eliminates the need for maintaining huge volumes of delay tables in the standard cell library...

Doddannagari, Uday

2009-05-15T23:59:59.000Z

80

A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS  

E-Print Network [OSTI]

A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS Kambiz Rahimi, Chris Diorio, Cecilia, Seattle, Washington ABSTRACT We propose an empirical simulation model for p-channel floating-gate MOS and accurate simulation model for the synaptic devices, many of these circuits were designed using equation

Diorio, Chris

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

E-Print Network 3.0 - aluminum oxide gate Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2 Charge Trapping Characteristics of SONOS Capacitors with Control Gates of Different Work Functions during ProgramErase Operations Summary: ABSTRACT The control gate...

82

University of Illinois at Urbana-Champaigns GATE Center for...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel...

83

University of Illinois at Urbana Champaigns GATE Center forAdvanced...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Urbana Champaigns GATE Center forAdvanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana Champaigns GATE Center forAdvanced Automotive Bio-Fuel...

84

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Final Environmental Statement Golden Gate Bridge, HighwayGolden Gate Bridge Highway and Transportation District, Draft Environmental

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

85

Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks  

SciTech Connect (OSTI)

The properties of high-{kappa} metal oxide gate stacks are often determined in the final processing steps following dielectric deposition. We report here results from medium energy ion scattering and x-ray photoelectron spectroscopy studies of oxygen and silicon diffusion and interfacial layer reactions in multilayer gate stacks. Our results show that Ti metallization of HfO{sub 2}/SiO{sub 2}/Si stacks reduces the SiO{sub 2} interlayer and (to a more limited extent) the HfO{sub 2} layer. We find that Si atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for Ti-Si interdiffusion through the high-{kappa} film in the presence of a Ti gate in the crystalline HfO{sub 2} films is also reported. This diffusion is likely to be related to defects in crystalline HfO{sub 2} films, such as grain boundaries. High-resolution transmission electron microscopy and corresponding electron energy loss spectroscopy scans show aggressive Ti-Si intermixing and oxygen diffusion to the outermost Ti layer, given high enough annealing temperature. Thermodynamic calculations show that the driving forces exist for some of the observed diffusion processes.

Goncharova, L. V.; Dalponte, M.; Gustafsson, T.; Celik, O.; Garfunkel, E.; Lysaght, P. S.; Bersuker, G. [Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, 136 Frelinghuysen Rd., Piscataway, New Jersey 08854 (United States); Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, 610 Taylor Rd., Piscataway, New Jersey 08854 (United States); SEMATECH, 2705 Montopolis Dr., Austin, Texas 78741 (United States)

2007-03-15T23:59:59.000Z

86

Gated x-ray detector for the National Ignition Facility  

SciTech Connect (OSTI)

Two new gated x-ray imaging cameras have recently been designed, constructed, and delivered to the National Ignition Facility in Livermore, CA. These gated x-Ray detectors are each designed to fit within an aluminum airbox with a large capacity cooling plane and are fitted with an array of environmental housekeeping sensors. These instruments are significantly different from earlier generations of gated x-ray images due, in part, to an innovative impedance matching scheme, advanced phosphor screens, pulsed phosphor circuits, precision assembly fixturing, unique system monitoring, and complete remote computer control. Preliminary characterization has shown repeatable uniformity between imaging strips, improved spatial resolution, and no detectable impedance reflections.

Oertel, John A.; Aragonez, Robert; Archuleta, Tom; Barnes, Cris; Casper, Larry; Fatherley, Valerie; Heinrichs, Todd; King, Robert; Landers, Doug; Lopez, Frank; Sanchez, Phillip; Sandoval, George; Schrank, Lou; Walsh, Peter; Bell, Perry; Brown, Matt; Costa, Robert; Holder, Joe; Montelongo, Sam; Pederson, Neal [Los Alamos National Laboratory, Los Alamos, New Mexico 87544 (United States); Lawrence Livermore National Laboratory, Livermore, California 94551-0808 (United States); VI Control Systems Ltd., Los Alamos, New Mexico 87544 (United States)

2006-10-15T23:59:59.000Z

87

An Area Efficien Low Power High Speed S-Box Implementation Using Power-Gated PLA  

E-Print Network [OSTI]

An Area Efficien Low Power High Speed S-Box Implementation Using Power-Gated PLA Ho Joon Lee- sign of Rijndael S-Box for the SubByte transformation using power-gating and PLA design techniques arrays,VLSI General Terms Cryptography, Power Gate, Low Power Keywords AES, PLA, Power Gate, S-Box 1

Ayers, Joseph

88

Parameter Mismatches, Chaos Synchronization and Fast Dynamic Logic Gates  

E-Print Network [OSTI]

By using chaos synchronization between non-identical multiple time delay semiconductor lasers with optoelectronic feedbacks, we demonstrate numerically how fast dynamic logic gates can be constructed. The results may be helpful to obtain a computational hardware with reconfigurable properties.

E. M. Shahverdiev

2009-07-02T23:59:59.000Z

89

Micro-mechanical logic for field produceable gate arrays  

E-Print Network [OSTI]

A paradigm of micro-mechanical gates for field produceable logic is explored. A desktop manufacturing system is sought after which is capable of printing functional logic devices in the field. A logic scheme which induces ...

Prakash, Manu

2005-01-01T23:59:59.000Z

90

Single-Step Implementation of Universal Quantum Gates  

SciTech Connect (OSTI)

We construct optimized implementations of the controlled-NOT and other universal two-qubit gates that, unlike many of the previously proposed protocols, are carried out in a single step. The new protocols require tunable interqubit couplings but, in return, show a significant improvement in the quality of gate operations. We make specific predictions for coupled Josephson junction qubits and compare them with the results of recent experiments.

Grigorenko, I.A.; Khveshchenko, D.V. [Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599 (United States)

2005-09-09T23:59:59.000Z

91

Rapidly reconfigurable all-optical universal logic gate  

DOE Patents [OSTI]

A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

Goddard, Lynford L. (Hayward, CA); Bond, Tiziana C. (Livermore, CA); Kallman, Jeffrey S. (Pleasanton, CA)

2010-09-07T23:59:59.000Z

92

Ultrafast gating of proximity-focused microchannel-plate intensifiers  

SciTech Connect (OSTI)

Proximity-focused, microchannel-plate (MCP) image intensifiers have been used at Los Alamos for many years to allow single frame film and video exposure times in the range of 2.5 to 10 ns. There is now a program to reduce gating times to < 1 ns. This paper reviews previous work and the problems in achieving good resolution with gating times of < 1 ns. The key problems involve applying fast electrical gating signals to the tube elements. We present computer modeling studies of the combined tube, tube connection, and pulser system and show that low photocathode surface resistivity must be obtained to permit fast gating between the photocathode and the MCP input. We discuss ways of making low-resistivity S20 photocathodes, using gallium arsenide photocathodes, and various means of gating the tubes. A variety of pulser designs are being experimentally evaluated including spark gaps, avalanche transistors, Krytron tubes with sharpening gaps, step recovery diodes, and photoconductive elements (PCEs). The results of these studies are presented. Because of the high capacitances involved in most gating schemes, the tube connection geometry must be of low-impedance design, and our solution is presented. Finally, ways of testing these high-speed camera systems are discussed.

Lundy, A.S.; Iverson, A.E.

1982-01-01T23:59:59.000Z

93

Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors  

E-Print Network [OSTI]

energy loss spectroscopy [23]. In contrast, HEMTs utilizing a Pt liner layer did not show the same gate electrical contact to the 2DEG. However, when stressing occurs in O2 or air, the O2 present reacts

Florida, University of

94

The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area  

E-Print Network [OSTI]

The primary purpose of the study is to explore the connections between residents' perception of safety and their crime experience, and the existence of gates and fences in multi-family housing communities in urban areas. For cultivating discussions...

Kim, Suk Kyung

2006-10-30T23:59:59.000Z

95

Identification of a reversible quantum gate: assessing the resources  

E-Print Network [OSTI]

We assess the resources needed to identify a reversible quantum gate among a finite set of alternatives, including in our analysis both deterministic and probabilistic strategies. Among the probabilistic strategies we consider unambiguous gate discrimination, where errors are not tolerated but inconclusive outcomes are allowed, and we prove that parallel strategies are sufficient to unambiguously identify the unknown gate with minimum number of queries. This result is used to provide upper and lower bounds on the query complexity and on the minimum ancilla dimension. In addition, we introduce the notion of generalized t-designs, which includes unitary t-designs and group representations as special cases. For gates forming a generalized t-design we give an explicit expression for the maximum probability of correct gate identification and we prove that there is no gap between the performances of deterministic strategies an those of probabilistic strategies. Hence, evaluating of the query complexity of perfect deterministic discrimination is reduced to the easier problem of evaluating the query complexity of unambiguous discrimination. Finally, we consider discrimination strategies where the use of ancillas is forbidden, providing upper bounds on the number of additional queries needed to make up for the lack of entanglement with the ancillas.

Giulio Chiribella; Giacomo Mauro D'Ariano; Martin Roetteler

2014-09-12T23:59:59.000Z

96

Self-aligned submicron gate length gallium arsenide MESFET  

E-Print Network [OSTI]

-biaserl saturation currents of 396. 67 + 83. 984 IzA were obtained for the transistors. Built- in voltages of 0. 8198 6 0. 007 V and ideality factors of 1. 456 6 0. 0079 were obtained for the Schottky diodes. The effect of gate length on transcond ictance... Geometrical and physical origins for the small signal equivalent circuit of FET Developed fabrication process for submicron gate length GaAs MESFET Transistor and Schottky diode mask patterns 10 13 15 16 18 19 21 23 23 25 25 32 34 18. Process...

Huang, Hsien-Ching

2012-06-07T23:59:59.000Z

97

Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate  

E-Print Network [OSTI]

Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

Yu, Hongpeng

98

E-Print Network 3.0 - alternative gate dielectric Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

poor quality Ge native dielectrics for gate insulator and field... of the optimum ALD HfO on thin Ge oxynitride (GeO N ) gate ... Source: Chui, Chi On - Electrical Engineering...

99

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE...  

Energy Savers [EERE]

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence Presentation...

100

Penn State DOE GATE Center of Exellence for In-Vehicle, High...  

Energy Savers [EERE]

Penn State DOE GATE Center of Exellence for In-Vehicle, High-Power Energy Storage Systems Penn State DOE GATE Center of Exellence for In-Vehicle, High-Power Energy Storage Systems...

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors  

E-Print Network [OSTI]

-effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel...

Owen, Man Hon Samuel

2010-11-16T23:59:59.000Z

102

Compressed sensing quantum process tomography for superconducting quantum gates  

E-Print Network [OSTI]

We apply the method of compressed sensing (CS) quantum process tomography (QPT) to characterize quantum gates based on superconducting Xmon and phase qubits. Using experimental data for a two-qubit controlled-Z gate, we obtain an estimate for the process matrix $\\chi$ with reasonably high fidelity compared to full QPT, but using a significantly reduced set of initial states and measurement configurations. We show that the CS method still works when the amount of used data is so small that the standard QPT would have an underdetermined system of equations. We also apply the CS method to the analysis of the three-qubit Toffoli gate with numerically added noise, and similarly show that the method works well for a substantially reduced set of data. For the CS calculations we use two different bases in which the process matrix $\\chi$ is approximately sparse, and show that the resulting estimates of the process matrices match each ther with reasonably high fidelity. For both two-qubit and three-qubit gates, we characterize the quantum process by not only its process matrix and fidelity, but also by the corresponding standard deviation, defined via variation of the state fidelity for different initial states.

Andrey V. Rodionov; Andrzej Veitia; R. Barends; J. Kelly; Daniel Sank; J. Wenner; John M. Martinis; Robert L. Kosut; Alexander N. Korotkov

2014-07-03T23:59:59.000Z

103

Quantum phase gate for optical qubits with cavity quantum optomechanics  

E-Print Network [OSTI]

We show that a cavity optomechanical system formed by a mechanical resonator simultaneously coupled to two modes of an optical cavity can be used for the implementation of quantum phase gate between optical qubits associated with the two intracavity modes. The scheme is realizable for sufficiently strong single-photon optomechanical coupling in the resolved sideband regime, and is robust against cavity losses.

Muhammad Asjad; Paolo Tombesi; David Vitali

2015-01-16T23:59:59.000Z

104

ECG Gated Tomographic reconstruction for 3-D Rotational Coronary Angiography  

E-Print Network [OSTI]

imaging techniques to improve both the safety and the efficacy of coronary angiography interventions the ground for a platform dedicated to the planning and execution of percutaneous coronary inter- ventionsECG Gated Tomographic reconstruction for 3-D Rotational Coronary Angiography Yining HU, Lizhe XIE

Paris-Sud XI, Université de

105

Advanced Gate Drive for the SNS High Voltage Converter Modulator  

SciTech Connect (OSTI)

SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

2009-05-07T23:59:59.000Z

106

An overview of the gate and panel industry  

E-Print Network [OSTI]

acquiring raw materials, its pre-fabrication, welding, touch-up, and delivery of the product. My first major responsibility for Texas Gate and Panel was to expand its sales territory. It soon became obvious that a thorough knowledge of my competitors...

Fisher, C. West

2000-01-01T23:59:59.000Z

107

Design, Simulation and Modeling of Insulated Gate Bipolar Transistor  

E-Print Network [OSTI]

The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions...

Gupta, Kaustubh

2013-07-09T23:59:59.000Z

108

Controlling attosecond electron dynamics by phase-stabilized polarization gating  

E-Print Network [OSTI]

LETTERS Controlling attosecond electron dynamics by phase-stabilized polarization gating I. J. SOLA the signature of a single return of the electron wavepacket over a large range of energies. This temporally (low energy) and cut-off (high energy) harmonics, specific focusing conditions ensure that only

Loss, Daniel

109

Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches  

SciTech Connect (OSTI)

The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that determine the efficiency of this process are investigated, providing insights for the development of an all-optical gate.

Prs, Martti; Khler, Jrgen, E-mail: juergen.koehler@uni-bayreuth.de [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany)] [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany); Grf, Katja; Bauer, Peter; Thelakkat, Mukundan [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)] [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)

2013-11-25T23:59:59.000Z

110

Controlling Wild Mobile Robots Using Virtual Gates and Discrete Transitions  

E-Print Network [OSTI]

Controlling Wild Mobile Robots Using Virtual Gates and Discrete Transitions Leonardo Bobadilla purposely design them to execute wild motions, which means each will strike every open set infinitely often, "wildly behaving" robots that move more-or-less straight until a wall is contacted. They then pick

LaValle, Steven M.

111

TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid  

E-Print Network [OSTI]

TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid verification using node elimination proposes a novel approach to systematically reduce the power grid and accurately compute an upper bound on the voltage drops at power grid nodes that are retained. Furthermore, acriterion for the safety of nodes

Najm, Farid N.

112

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors  

E-Print Network [OSTI]

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

D. J. Carrad; A. M. Burke; R. W. Lyttleton; H. J. Joyce; H. H. Tan; C. Jagadish; K. Storm; H. Linke; L. Samuelson; A. P. Micolich

2014-04-08T23:59:59.000Z

113

A real-time respiration position based passive breath gating equipment for gated radiotherapy: A preclinical evaluation  

SciTech Connect (OSTI)

Purpose: To develop a passive gating system incorporating with the real-time position management (RPM) system for the gated radiotherapy. Methods: Passive breath gating (PBG) equipment, which consists of a breath-hold valve, a controller mechanism, a mouthpiece kit, and a supporting frame, was designed. A commercial real-time positioning management system was implemented to synchronize the target motion and radiation delivery on a linear accelerator with the patient's breathing cycle. The respiratory related target motion was investigated by using the RPM system for correlating the external markers with the internal target motion while using PBG for passively blocking patient's breathing. Six patients were enrolled in the preclinical feasibility and efficiency study of the PBG system. Results: PBG equipment was designed and fabricated. The PBG can be manually triggered or released to block or unblock patient's breathing. A clinical workflow was outlined to integrate the PBG with the RPM system. After implementing the RPM based PBG system, the breath-hold period can be prolonged to 15-25 s and the treatment delivery efficiency for each field can be improved by 200%-400%. The results from the six patients showed that the diaphragm motion caused by respiration was reduced to less than 3 mm and the position of the diaphragm was reproducible for difference gating periods. Conclusions: A RPM based PBG system was developed and implemented. With the new gating system, the patient's breath-hold time can be extended and a significant improvement in the treatment delivery efficiency can also be achieved.

Hu Weigang; Xu Anjie; Li Guichao; Zhang Zhen; Housley, Dave; Ye Jinsong [Department of Radiation Oncology, Fudan University Shanghai Cancer Center and Department of Oncology, Shanghai Medical College, Fudan University, Shanghai 200032 (China); Department of Radiation Oncology, Swedish Cancer Institute, Seattle, Washington 98104 (United States)

2012-03-15T23:59:59.000Z

114

Project W-320, 241-C-106 sluicing master calculation list  

SciTech Connect (OSTI)

This supporting document has been prepared to make the Master Calculation List readily retrievable. The list gives the status of the calculation (as-built, not used, applied, etc.), the calculation title, its originator, comments, and report number under which it was issued. Tank 241-C-106 has been included on the High Heat Load Watch List.

Bailey, J.W.

1998-08-07T23:59:59.000Z

115

Presented at the 2003 USSD Annual Lecture, Charleston, South Carolina. April 2003. SPILLWAY GATE RELIABILITY IN THE CONTEXT OF  

E-Print Network [OSTI]

and operations are listed and illustrated through their application to the Thames Flood Barrier gates

Bowles, David S.

116

Improved phase gate reliability in systems with neutral Ising anyons  

E-Print Network [OSTI]

Recent proposals using heterostructures of superconducting and either topologically insulating or semiconducting layers have been put forth as possible platforms for topological quantum computation. These systems are predicted to contain Ising anyons and share the feature of having only neutral edge excitations. In this note, we show that these proposals can be combined with the recently proposed "sack geometry" for implementation of a phase gate in order to conduct robust universal quantum computation. In addition, we propose a general method for adjusting edge tunneling rates in such systems, which is necessary for the control of interferometric devices. The error rate for the phase gate in neutral Ising systems is parametrically smaller than for a similar geometry in which the edge modes carry charge: it goes as $T^3$ rather than $T$ at low temperatures. At zero temperature, the phase variance becomes constant at long times rather than carrying a logarithmic divergence.

David J. Clarke; Kirill Shtengel

2010-09-01T23:59:59.000Z

117

Photon-photon gates in Bose-Einstein condensates  

E-Print Network [OSTI]

It has recently been shown that light can be stored in Bose-Einstein condensates for over a second. Here we propose a method for realizing a controlled phase gate between two stored photons. The photons are both stored in the ground state of the effective trapping potential inside the condensate. The collision-induced interaction is enhanced by adiabatically increasing the trapping frequency and by using a Feshbach resonance. A controlled phase shift of $\\pi$ can be achieved in one second.

Arnaud Rispe; Bing He; Christoph Simon

2010-09-30T23:59:59.000Z

118

GATE Center for Automotive Fuel Cell Systems at Virginia Tech  

SciTech Connect (OSTI)

The Virginia Tech GATE Center for Automotive Fuel Cell Systems (CAFCS) achieved the following objectives in support of the domestic automotive industry: ? Expanded and updated fuel cell and vehicle technologies education programs; ? Conducted industry directed research in three thrust areas ?? development and characterization of materials for PEM fuel cells; performance and durability modeling for PEM fuel cells; and fuel cell systems design and optimization, including hybrid and plug-in hybrid fuel cell vehicles; ? Developed MS and Ph.D. engineers and scientists who are pursuing careers related to fuel cells and automotive applications; ? Published research results that provide industry with new knowledge which contributes to the advancement of fuel cell and vehicle systems commercialization. With support from the Dept. of Energy, the CAFCS upgraded existing graduate course offerings; introduced a hands-on laboratory component that make use of Virginia Tech??s comprehensive laboratory facilities, funded 15 GATE Fellowships over a five year period; and expanded our program of industry interaction to improve student awareness of challenges and opportunities in the automotive industry. GATE Center graduate students have a state-of-the-art research experience preparing them for a career to contribute to the advancement fuel cell and vehicle technologies.

Douglas Nelson

2011-05-31T23:59:59.000Z

119

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene  

SciTech Connect (OSTI)

The electronic bandgap is an intrinsic property of semiconductors and insulators that largely determines their transport and optical properties. As such, it has a central role in modern device physics and technology and governs the operation of semiconductor devices such as p-n junctions, transistors, photodiodes and lasers. A tunable bandgap would be highly desirable because it would allow great flexibility in design and optimization of such devices, in particular if it could be tuned by applying a variable external electric field. However, in conventional materials, the bandgap is fixed by their crystalline structure, preventing such bandgap control. Here we demonstrate the realization of a widely tunable electronic bandgap in electrically gated bilayer graphene. Using a dual-gate bilayer graphene field-effect transistor (FET) and infrared microspectroscopy, we demonstrate a gate-controlled, continuously tunable bandgap of up to 250 meV. Our technique avoids uncontrolled chemical doping and provides direct evidence of a widely tunable bandgap -- spanning a spectral range from zero to mid-infrared -- that has eluded previous attempts. Combined with the remarkable electrical transport properties of such systems, this electrostatic bandgap control suggests novel nanoelectronic and nanophotonic device applications based on graphene.

Zhang, Yuanbo; Tang, Tsung-Ta; Girit, Caglar; Hao, Zhao; Martin, Michael C.; Zettl, Alex; Crommie, Michael F.; Shen, Y. Ron; Wang, Feng

2009-08-11T23:59:59.000Z

120

Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices  

DOE Patents [OSTI]

A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Simple trapped-ion architecture for high-fidelity Toffoli gates  

SciTech Connect (OSTI)

We discuss a simple architecture for a quantum toffoli gate implemented using three trapped ions. The gate, which, in principle, can be implemented with a single laser-induced operation, is effective under rather general conditions and is strikingly robust (within any experimentally realistic range of values) against dephasing, heating, and random fluctuations of the Hamiltonian parameters. We provide a full characterization of the unitary and noise-affected gate using three-qubit quantum process tomography.

Borrelli, Massimo [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Mazzola, Laura [Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland); School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Paternostro, Mauro [School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Maniscalco, Sabrina [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland)

2011-07-15T23:59:59.000Z

122

Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape  

Broader source: Energy.gov [DOE]

Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

123

Locally observable conditions for the successful implementation of entangling multi-qubit quantum gates  

E-Print Network [OSTI]

The information obtained from the operation of a quantum gate on only two complementary sets of input states is sufficient to estimate the quantum process fidelity of the gate. In the case of entangling gates, these conditions can be used to predict the multi qubit entanglement capability from the fidelities of two non-entangling local operations. It is then possible to predict highly non-classical features of the gate such as violations of local realism from the fidelities of two completely classical input-output relations, without generating any actual entanglement.

Holger F. Hofmann; Ryo Okamoto; Shigeki Takeuchi

2005-09-01T23:59:59.000Z

124

Rapid optimization of working parameters of microwave-driven multilevel qubits for minimal gate leakage  

E-Print Network [OSTI]

.0134 is the interaction between the qubits, .0020 .0136 M=L is the coupling constant, and x i , x ei , and h.0133x i .0134 (i .0136 1 and 2) are the canonical coordinate, normal- ized external flux, and Hamiltonian of the ith single qubit. Note... for the gate at the point B. The quality of a gate can be described by gate fidelity F .0017 Trace.0137.0026 P .0026 I .0138, where .0026 P and.0026 I are the physical and ideal density matrices after gate operation and the overline denotes averaging over all...

Zhou, Zhongyuan; Han, Siyuan; Chu, Shih-I

2005-09-16T23:59:59.000Z

125

Use of high-level design information for enabling automation of fine-grained power gating  

E-Print Network [OSTI]

Leakage power reduction through power gating requires considerable design and verification effort. Conventionally, extensive analysis is required for dividing a heterogeneous design into power domains and generating control ...

Agarwal, Abhinav

2014-01-01T23:59:59.000Z

126

Error Compensation of Single-Qubit Gates in a Surface Electrode Ion Trap Using Composite Pulses  

E-Print Network [OSTI]

The trapped atomic ion qubits feature desirable properties for use in a quantum computer such as long coherence times (Langer et al., 2005), high qubit measurement fidelity (Noek et al., 2013), and universal logic gates (Home et al., 2009). The quality of quantum logic gate operations on trapped ion qubits has been limited by the stability of the control fields at the ion location used to implement the gate operations. For this reason, the logic gates utilizing microwave fields (Brown et al., 2011; Shappert et al., 2013; Harty et al., 2014) have shown gate fidelities several orders of magnitude better than those using laser fields (Knill et al., 2008; Benhelm et al., 2008; Ballance et al., 2014). Here, we demonstrate low-error single-qubit gates performed using stimulated Raman transitions on an ion qubit trapped in a microfabricated chip trap. Gate errors are measured using a randomized benchmarking protocol (Knill et al., 2008; Wallman et al., 2014; Magesan et al., 2012), where amplitude error in the control beam is compensated using various pulse sequence techniques (Wimperis, 1994; Low et al., 2014). Using B2 compensation (Wimperis, 1994), we demonstrate single qubit gates with an average error per randomized Clifford group gate of $3.6(3)\\times10^{-4}$. We also show that compact palindromic pulse compensation sequences (PD$n$) (Low et al., 2014) compensate for amplitude errors as designed.

Emily Mount; Chingiz Kabytayev; Stephen Crain; Robin Harper; So-Young Baek; Geert Vrijsen; Steven Flammia; Kenneth R. Brown; Peter Maunz; Jungsang Kim

2015-04-06T23:59:59.000Z

127

2006-2010 GATE program at Ohio State University Center for Automotive...  

Broader source: Energy.gov (indexed) [DOE]

DOE Office of Vehicle Technologies "Mega" Merit Review 2008 on February 25, 2008 in Bethesda, Maryland. merit08guezennec.pdf More Documents & Publications GATE: Energy Efficient...

128

Alternative Gate Dielectrics on Semiconductors for MOSFET Device Applications  

SciTech Connect (OSTI)

We have investigated the synthesis and properties of deposited oxides on Si and Ge for use as alternative gate dielectrics in MOSFET applications. The capacitance and leakage current behavior of polycrystalline Y{sub 2}O{sub 3} films synthesized by pulsed-laser deposition is reported. In addition, we also discuss the growth of epitaxial oxide structures. In particular, we have investigated the use of silicide termination for oxide growth on (001) Si using laser-molecular beam epitaxy. In addition, we discuss a novel approach involving the use of hydrogen to eliminate native oxide during initial dielectric oxide nucleation on (001) Ge.

Norton, D.P.; Budai, J.D.; Chisholm, M.F.; Pennycook, S.J.; McKee, R.; Walker, F.; Lee, Y.; Park, C.

1999-12-06T23:59:59.000Z

129

SiC Power MOSFET with Improved Gate Dielectric  

SciTech Connect (OSTI)

In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

2010-08-23T23:59:59.000Z

130

Three-qubit phase gate based on cavity quantum electrodynamics  

E-Print Network [OSTI]

- mentation, such as linear ion traps #4;1#5;, liquid-state nuclear magnetic resonance #1;NMR#2; #4;2#5;, and cavity QED systems #4;3,4#5;. There are three requirements for implementing a quantum computer: Efficient manipulation and read out of an indi.... #4;6#5;, a scheme to implement a two-qubit quantum phase gate and one-qubit unitary operation implementation based on cavity QED was described. They choose the Fock states #6;0#7; and #6;1#7; of a high Q cavity mode as the two logical states of a...

Chang, Jun-Tao; Zubairy, M. Suhail

2008-01-01T23:59:59.000Z

131

Gate Hours & Services | Stanford Synchrotron Radiation Lightsource  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor'sshort version) Thelong version)shortGate Hours &

132

Coherent molecular transistor: Control through variation of the gate wave function  

SciTech Connect (OSTI)

In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

Ernzerhof, Matthias, E-mail: Matthias.Ernzerhof@UMontreal.ca [Dpartement de Chimie, Universit de Montral, C.P. 6128 Succursale A, Montral, Quebec H3C 3J7 (Canada)] [Dpartement de Chimie, Universit de Montral, C.P. 6128 Succursale A, Montral, Quebec H3C 3J7 (Canada)

2014-03-21T23:59:59.000Z

133

Gate Reliability Assessment for a Spillway Upgrade Design in Queensland, Australia USSD 2006 Conference Page 1  

E-Print Network [OSTI]

Gate Reliability Assessment for a Spillway Upgrade Design in Queensland, Australia USSD 2006 Conference Page 1 RELIABILITY ASSESSMENT FOR A SPILLWAY GATE UPGRADE DESIGN IN QUEENSLAND, AUSTRALIA Malcolm of reliability analysis, and how the results influenced the spillway system design and overall risk evaluation

Bowles, David S.

134

Controlling the Performance of a Three-Terminal Molecular Transistor: Conformational versus Conventional Gating  

E-Print Network [OSTI]

University, Houghton, Michigan 49931, United States Shashi P. Karna* U.S. Army Research Laboratory, Weapons *S Supporting Information ABSTRACT: The effect of conformational changes in the gate arm of a three of the gate field. The current modulation is found to reach its maximum only under exclusive effect of voltage

Pandey, Ravi

135

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto  

E-Print Network [OSTI]

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto , Veronica Keywords: Schottky barrier Ambipolarity Si nanowire Stencil lithography FET Silicide a b s t r a c t We chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning

De Micheli, Giovanni

136

Surface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission performance  

E-Print Network [OSTI]

the merits of molybdenum Mo silicide formation on gated polycrystalline silicon poly-Si field emitters. Metal, any metal silicide can be adopted without reSurface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission

Lee, Jong Duk

137

Probabilistic quantum gates between remote atoms through interference of optical frequency qubits  

E-Print Network [OSTI]

Probabilistic quantum gates between remote atoms through interference of optical frequency qubits L gates on remote trapped atom qubits through interference of optical frequency qubits. The method does be localized well under the Lamb-Dicke limit through laser cooling in a strong trap, the elimination

Madsen, Martin John

138

Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films  

E-Print Network [OSTI]

nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer...

Lin, Chen-Han

2012-10-19T23:59:59.000Z

139

Directions to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North  

E-Print Network [OSTI]

on Vermont Avenue Turn right at 36th Place/Downey Way and enter USC at Gate 6 5 (Golden State/Santa AnaDirections to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North Take the Exposition Boulevard exit Go straight through the 37th Street light. Keep left Go under the freeway bridge and across

Valero-Cuevas, Francisco

140

Efficient polarization gating of high-order harmonic generation by polarization-shaped ultrashort pulses  

E-Print Network [OSTI]

Polarization gating of high-order harmonic generation takes advantage of the significant reduction of har for generation of polarization gated pulses using wave-plate combinations is inefficient, and propose photon energy radiation from the harmonic spectrum. Need- less to say, the generation of near single

Silberberg, Yaron

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Electrochemical gating of individual single-wall carbon nanotubes observed by electron transport measurements and resonant  

E-Print Network [OSTI]

, the Fermi energy of a nanotube can be changed, as ions from the solution accu- mulate on the surface gating of nanotubes has been shown previously to effectively shift the Fermi energy of semiconducting with the laser energy, we can observe the Raman spectrum from a single SWNT.7 Electrochemical gating of nanotubes

142

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET)  

E-Print Network [OSTI]

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P- type 4H Silicon-Carbide 13,41, a wide, Silicon Carbide, Field effect transistor, Simulation. I. INTRODUCTION TH E BMFET operates in bipolar mode

Kumar, M. Jagadesh

143

Optimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa Balakrishnan  

E-Print Network [OSTI]

at Boston's Logan International Airport in the US are used to illustrate the advantages of the proposed for Boston Logan International Airport (BOS) is shown in Fig. 1. Gates at each of the four main terminalsOptimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa

Gummadi, Ramakrishna

144

Classification : Original Article VOLTAGE-GATED SODIUM CHANNELS POTENTIATE THE INVASIVE  

E-Print Network [OSTI]

- gated sodium channels in non-small-cell lung cancer cell lines. Functional voltage-gated sodium channels cancerous cell lines H23, H460 and Calu-1 possess functional sodium channels while normal and weakly metastatic cell lines do not. While all the cell lines expressed mRNA for numerous sodium channel isoforms

Boyer, Edmond

145

Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe*  

E-Print Network [OSTI]

Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe to create a number of microfluidic analogs to electronic circuit components. Three classes of components are demonstrated: (1) OR/AND, NOR/NAND, and XNOR digital microfluidic logic gates; (2) programmable, autonomous

Beebe, David J.

146

Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1  

E-Print Network [OSTI]

Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

Shepard, Kenneth

147

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip  

E-Print Network [OSTI]

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate transformer integrated in a CMOS silicon die together with the gate driver and other required functions frequency through the coreless transformer. The chosen design methodology will be explained and experimental

Paris-Sud XI, Université de

148

Analytical approach to swift non-leaky entangling gates in superconducting qubits  

E-Print Network [OSTI]

We develop schemes for designing pulses that implement fast and precise entangling quantum gates in superconducting qubit systems despite the presence of nearby harmful transitions. Our approach is based on purposely involving the nearest harmful transition in the quantum evolution instead of trying to avoid it. Using analytical tools, we design simple microwave control fields that implement maximally entangling gates with fidelities exceeding 99% in times as low as 40 ns. We demonstrate our approach in a two-qubit circuit QED system by designing the two most important quantum entangling gates: a conditional-NOT gate and a conditional-Z gate. Our results constitute an important step toward overcoming the problem of spectral crowding, one of the primary challenges in controlling multi-qubit systems.

Sophia E. Economou; Edwin Barnes

2014-11-03T23:59:59.000Z

149

A proposal for the realization of universal quantum gates via superconducting qubits inside a cavity  

SciTech Connect (OSTI)

A family of quantum logic gates is proposed via superconducting (SC) qubits coupled to a SC-cavity. The Hamiltonian for SC-charge qubits inside a single mode cavity is considered. Three- and two-qubit operations are generated by applying a classical magnetic field with the flux. Therefore, a number of quantum logic gates are realized. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates. -- Highlights: A family of quantum logic gates is proposed via SC-qubits coupled to a cavity. Three- and two-qubit operations are generated via a classical field with the flux. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates.

Obada, A.-S.F. [Faculty of Science, Al-Azhar University, Nasr City, Cairo (Egypt)] [Faculty of Science, Al-Azhar University, Nasr City, Cairo (Egypt); Hessian, H.A. [Faculty of Science, Assiut University, Assiut (Egypt)] [Faculty of Science, Assiut University, Assiut (Egypt); Mohamed, A.-B.A. [Faculty of Science, Assiut University, Assiut (Egypt) [Faculty of Science, Assiut University, Assiut (Egypt); Community College, Salman Bin Abdulaziz University, Al-Aflaj (Saudi Arabia); Homid, Ali H., E-mail: alihimad@yahoo.com [Faculty of Science, Al-Azhar University, Assiut (Egypt)

2013-07-15T23:59:59.000Z

150

Experimental Estimation of Average Fidelity of a Clifford Gate on a 7-qubit Quantum Processor  

E-Print Network [OSTI]

Quantum gates in experiment are inherently prone to errors that need to be characterized before they can be corrected. Full characterization via quantum process tomography is impractical and often unnecessary. For most practical purposes, it is enough to estimate more general quantities such as the average fidelity. Here we use a unitary 2-design and twirling protocol for efficiently estimating the average fidelity of Clifford gates, to certify a 7-qubit entangling gate in a nuclear magnetic resonance quantum processor. Compared with more than $10^8$ experiments required by full process tomography, we conducted 1656 experiments to satisfy a statistical confidence level of 99%. The average fidelity of this Clifford gate in experiment is 55.1%, and rises to 87.5% if the infidelity due to decoherence is removed. The entire protocol of certifying Clifford gates is efficient and scalable, and can easily be extended to any general quantum information processor with minor modifications.

Dawei Lu; Hang Li; Denis-Alexandre Trottier; Jun Li; Aharon Brodutch; Anthony P. Krismanich; Ahmad Ghavami; Gary I. Dmitrienko; Guilu Long; Jonathan Baugh; Raymond Laflamme

2014-11-28T23:59:59.000Z

151

A CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates  

E-Print Network [OSTI]

This thesis describes a CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates. Using analytical models for the transient behavior of the gates, accurate estimates of the power dissipated by each type of gate during a typical transition...

Islam, Kazi Inamul

1995-01-01T23:59:59.000Z

152

After-gate attack on a quantum cryptosystem  

E-Print Network [OSTI]

We present a method to control the detection events in quantum key distribution systems that use gated single-photon detectors. We employ bright pulses as faked states, timed to arrive at the avalanche photodiodes outside the activation time. The attack can remain unnoticed, since the faked states do not increase the error rate per se. This allows for an intercept-resend attack, where an eavesdropper transfers her detection events to the legitimate receiver without causing any errors. As a side effect, afterpulses, originating from accumulated charge carriers in the detectors, increase the error rate. We have experimentally tested detectors of the system id3110 (Clavis2) from ID Quantique. We identify the parameter regime in which the attack is feasible despite the side effect. Furthermore, we outline how simple modifications in the implementation can make the device immune to this attack.

Carlos Wiechers; Lars Lydersen; Christoffer Wittmann; Dominique Elser; Johannes Skaar; Christoph Marquardt; Vadim Makarov; Gerd Leuchs

2010-09-14T23:59:59.000Z

153

Electrically-gated near-field radiative thermal transistor  

E-Print Network [OSTI]

In this work, we propose a near-field radiative thermal transistor made of two graphene-covered silicon carbide (SiC) plates separated by a nanometer vacuum gap. Thick SiC plates serve as the thermal "source" and "drain", while graphene sheets function as the "gate" to modulate the near-field photon tunneling by tuning chemical potential with applied voltage biases symmetrically or asymmetrically. The radiative heat flux calculated from fluctuational electrodynamics significantly varies with graphene chemical potentials, which can tune the coupling between graphene plasmon across the vacuum gap. Thermal modulation, switching, and amplification, which are the key features required for a thermal transistor, are theoretically realized and analyzed. This work will pave the way to active thermal management, thermal circuits, and thermal computing.

Yang, Yue

2015-01-01T23:59:59.000Z

154

Gas-controlled dynamic vacuum insulation with gas gate  

DOE Patents [OSTI]

Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

Benson, D.K.; Potter, T.F.

1994-06-07T23:59:59.000Z

155

Gas-controlled dynamic vacuum insulation with gas gate  

DOE Patents [OSTI]

Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

Benson, David K. (Golden, CO); Potter, Thomas F. (Denver, CO)

1994-06-07T23:59:59.000Z

156

Demonstration of a fully tuneable entangling gate for continuous-variable one-way quantum computation  

E-Print Network [OSTI]

We introduce a fully tuneable entangling gate for continuous-variable one-way quantum computation. We present a proof-of-principle demonstration by propagating two independent optical inputs through a three-mode linear cluster state and applying the gate in various regimes. The genuine quantum nature of the gate is confirmed by verifying the entanglement strength in the output state. Our protocol can be readily incorporated into efficient multi-mode interaction operations in the context of large-scale one-way quantum computation, as our tuning process is the generalisation of cluster state shaping.

Shota Yokoyama; Ryuji Ukai; Seiji C. Armstrong; Jun-ichi Yoshikawa; Peter van Loock; Akira Furusawa

2014-10-02T23:59:59.000Z

157

Stripline microchannel plate image intensifier tubes (MCPTS) for nanosecond optical gating applications  

SciTech Connect (OSTI)

Shuttering characteristics of low impedance stripline geometry microchannel plate image intensifier tubes (MCPTs) with 50% transmissive nickel undercoated S-20 photocathodes are discussed. Iris-free shutter sequences with 50 to 75 micron resolution at optical gate times of 500ps to 2ns were measured for typical samples from two manufacturers. Shutter sequences clearly showing gate pulse propagation velocities for this MCPT design when externally driven by impedance matched circuitry are contrasted with non-directional sequences obtained from unmatched coupling of the gate pulse. 7 refs., 7 figs.

Yates, G.J.; Jaramillo, S.A.; Zagarino, P.; Thomas, M.

1986-01-01T23:59:59.000Z

158

Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene  

E-Print Network [OSTI]

Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

Lin-Jun Wang; Guo-Ping Guo; Da Wei; Gang Cao; Tao Tu; Ming Xiao; Guang-Can Guo; A. M. Chang

2011-04-22T23:59:59.000Z

159

Repeat-until-success cubic phase gate for universal continuous-variable quantum computation  

E-Print Network [OSTI]

In order to achieve universal quantum computation using continuous variables, one needs to jump out of the set of Gaussian operations and have a non-Gaussian element, such as the cubic phase gate. However, such a gate is currently very difficult to implement in practice. Here we introduce an experimentally viable 'repeat-until-success' approach to generating the cubic phase gate, which is achieved using sequential photon subtractions and Gaussian operations. We find that our scheme offers benefits in terms of the expected time until success, although we require a primitive quantum memory.

Kevin Marshall; Raphael Pooser; George Siopsis; Christian Weedbrook

2014-12-01T23:59:59.000Z

160

SRP4760R List of Lots By Purchaser As at :-13-feb-2013:08:07 CENTRAL ENGLAND (Wharncliffe Plank Gate)  

E-Print Network [OSTI]

ENGLAND (Wharncliffe Plank Gate) CENTRAL ENGLAND (Coach Road) NORTH ENGLAND (Guns Crag (Redesdale)) NORTH

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

A linear programming solution to the gate assignment problem at airport terminals  

E-Print Network [OSTI]

This research solves the flight-to-gate assignment problem at airports in such a way as to minimize, or at least reduce, walking distances for passengers inside terminals. Two solution methods are suggested. The first is ...

Mangoubi, Rami

1980-01-01T23:59:59.000Z

162

E-Print Network 3.0 - arbitrary phase gates Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

<< < 1 2 3 4 5 > >> Page: << < 1 2 3 4 5 > >> 41 Optical simulation of quantum logic N. J. Cerf,1 Summary: of universal quantum gates using simple optical components beam...

163

The civic forum in ancient Israel : the form, function, and symbolism of city gates  

E-Print Network [OSTI]

of City Gates by Daniel Allan Frese Doctor of Philosophy inC. Michael Hall, and Allan M. Williams. Oxford: Blackwell,in History by Daniel Allan Frese Committee in Charge:

Frese, Daniel Allan

2012-01-01T23:59:59.000Z

164

All-Optical Switch and Transistor Gated by One Stored Photon  

E-Print Network [OSTI]

The realization of an all-optical transistor, in which one gate photon controls a source light beam, is a long-standing goal in optics. By stopping a light pulse in an atomic ensemble contained inside an optical ...

Chen, Wenlan

165

E-Print Network 3.0 - affects voltage-gated calcium Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

, 1115-1118 3 Dolphin, A.C. (2003) b subunits of voltage-gated calcium channels. J. Bioenerg. Biomembr... . 35, 599-620 4 Van Petegem, F. et al. (2004) Structure of a complex...

166

Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage  

SciTech Connect (OSTI)

A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M.; Zhou, Hong-Cai (TAM); (U. Amsterdam)

2010-10-22T23:59:59.000Z

167

Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage  

SciTech Connect (OSTI)

A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M; Zhou, Hong-Cai

2010-01-01T23:59:59.000Z

168

Process fidelity estimation of linear optical quantum CZ gate: A comparative study  

E-Print Network [OSTI]

We present a systematic comparison of different methods of fidelity estimation of a linear optical quantum controlled-Z gate implemented by two-photon interference on a partially polarizing beam splitter. We have utilized a linear fidelity estimator based on the Monte Carlo sampling technique as well as a non-linear estimator based on maximum likelihood reconstruction of a full quantum process matrix. In addition, we have also evaluated lower bound on quantum gate fidelity determined by average quantum state fidelities for two mutually unbiased bases. In order to probe various regimes of operation of the gate we have introduced a tunable delay line between the two photons. This allowed us to move from high-fidelity operation to a regime where the photons become distinguishable and the success probability of the scheme significantly depends on input state. We discuss in detail possible systematic effects that could influence the gate fidelity estimation.

M. Micuda; M. Sedlak; I. Straka; M. Mikova; M. Dusek; M. Jezek; J. Fiurasek

2014-03-19T23:59:59.000Z

169

Ligand-Gated Chloride Channels Are Receptors for Biogenic Amines in C. elegans  

E-Print Network [OSTI]

Biogenic amines such as serotonin and dopamine are intercellular signaling molecules that function widely as neurotransmitters and neuromodulators. We have identified in the nematode Caenorhabditis elegans three ligand-gated ...

Ringstad, Niels

170

Transient Turbulent Flow Simulation with Water Model Validation and Application to Slide Gate Dithering  

E-Print Network [OSTI]

) 244-6534 Email: bgthomas@illinois.edu Bruce Forman and Hongbin Yin ArcelorMittal Global R&D East) 399-3899 Email: bruce.forman@arcelormittal.com, Hongbin.Yin@arcelormittal.com ABSTRACT Slide gate

Thomas, Brian G.

171

pH sensing properties of graphene solution-gated field-effect transistors  

E-Print Network [OSTI]

The use of graphene grown by chemical vapor deposition to fabricate solution-gated field-effect transistors (SGFET) on different substrates is reported. SGFETs were fabricated using graphene transferred on poly(ethylene ...

Mailly-Giacchetti, Benjamin

2013-01-01T23:59:59.000Z

172

Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility  

Broader source: Energy.gov [DOE]

Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

173

Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems  

Broader source: Energy.gov [DOE]

Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

174

AN AUTOZEROING FLOATING-GATE BANDPASS FILTER Paul Hasler, Bradley A. Minch, and Chris Diorio  

E-Print Network [OSTI]

is the thermal Figure 1: An autozeroing oating-gate ampli er AFGA that uses pFET hot-electron injection a bandpass oating-gate ampli er that uses tunneling and pFET hot-electron injection to set its DC operating the current through the pFET. Steady state occurs when the injection current is equal to the tunneling current

Diorio, Chris

175

A review of "Gate of Heaven." by Abraham Cohen de Herrera  

E-Print Network [OSTI]

, and always with a complex sensation compounded of affinity with, and unbridgeable distance from, the man whose pen marked the pages so idiosyncratically. Abraham Cohen de Herrera. Gate of Heaven. Translated from the Spanish with Introduction and Notes... ready access to Herrera?s Gate of Heaven. Not only is this the first English translation of Puerta del Cielo, but it is also the first complete annotated edition of 198 SEVENTEENTH-CENTURY NEWS this important work of Jewish mysticism in any language...

William E. Engel

2003-01-01T23:59:59.000Z

176

Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum computing  

E-Print Network [OSTI]

A quantum computer can solve hard problems - such as prime factoring, database searching, and quantum simulation - at the cost of needing to protect fragile quantum states from error. Quantum error correction provides this protection, by distributing a logical state among many physical qubits via quantum entanglement. Superconductivity is an appealing platform, as it allows for constructing large quantum circuits, and is compatible with microfabrication. For superconducting qubits the surface code is a natural choice for error correction, as it uses only nearest-neighbour coupling and rapidly-cycled entangling gates. The gate fidelity requirements are modest: The per-step fidelity threshold is only about 99%. Here, we demonstrate a universal set of logic gates in a superconducting multi-qubit processor, achieving an average single-qubit gate fidelity of 99.92% and a two-qubit gate fidelity up to 99.4%. This places Josephson quantum computing at the fault-tolerant threshold for surface code error correction. Our quantum processor is a first step towards the surface code, using five qubits arranged in a linear array with nearest-neighbour coupling. As a further demonstration, we construct a five-qubit Greenberger-Horne-Zeilinger (GHZ) state using the complete circuit and full set of gates. The results demonstrate that Josephson quantum computing is a high-fidelity technology, with a clear path to scaling up to large-scale, fault-tolerant quantum circuits.

R. Barends; J. Kelly; A. Megrant; A. Veitia; D. Sank; E. Jeffrey; T. C. White; J. Mutus; A. G. Fowler; B. Campbell; Y. Chen; Z. Chen; B. Chiaro; A. Dunsworth; C. Neill; P. O`Malley; P. Roushan; A. Vainsencher; J. Wenner; A. N. Korotkov; A. N. Cleland; John M. Martinis

2014-02-19T23:59:59.000Z

177

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications  

SciTech Connect (OSTI)

This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

None

2011-07-31T23:59:59.000Z

178

Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry  

E-Print Network [OSTI]

Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

Colin J. Trout; Kenneth R. Brown

2015-01-29T23:59:59.000Z

179

Correlation of gross tumor volume excursion with potential benefits of respiratory gating  

SciTech Connect (OSTI)

Purpose: To test the hypothesis that the magnitude of thoracic tumor motion can be used to determine the desirability of respiratory gating. Methods and materials: Twenty patients to be treated for lung tumors had computed tomography image data sets acquired under assisted breath hold at normal inspiration (100% tidal volume), at full expiration (0% tidal volume), and under free breathing. A radiation oncologist outlined gross tumor volumes (GTVs) on the breath-hold computed tomographic images. These data sets were registered to the free-breathing image data set. Two sets of treatment plans were generated: one based on an internal target volume explicitly formed from assessment of the excursion of the clinical target volume (CTV) through the respiratory cycle, representing an ungated treatment, and the other based on the 0% tidal volume CTV, representing a gated treatment with little margin for residual motion. Dose-volume statistics were correlated to the magnitude of the motion of the center of the GTV during respiration. Results: Patients whose GTVs were >100 cm{sup 3} showed little decrease in lung dose under gating. The other patients showed a correlation between the excursion of the center of the GTV and a reduction in potential lung toxicity. As residual motion increased, the benefits of respiratory gating increased. Conclusion: Gating seems to be advantageous for patients whose GTVs are <100 cm{sup 3} and for whom the center of the GTV exhibits significant motion, provided residual motion under gating is kept small.

Starkschall, George [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)]. E-mail: gstarksc@mdanderson.org; Forster, Kenneth M. [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Kitamura, Kei [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Department of Radiology, Hokkaido University, Graduate School of Medicine, Sapporo (Japan); Cardenas, Alex [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Tucker, Susan L. [Department of Biomathematics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Stevens, Craig W. [Department of Radiation Oncology, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)

2004-11-15T23:59:59.000Z

180

Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry  

E-Print Network [OSTI]

Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

Colin J. Trout; Kenneth R. Brown

2015-01-07T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

New VLSI complexity results for threshold gate comparison  

SciTech Connect (OSTI)

The paper overviews recent developments concerning optimal (from the point of view of size and depth) implementations of COMPARISON using threshold gates. We detail a class of solutions which also covers another particular solution, and spans from constant to logarithmic depths. These circuit complexity results are supplemented by fresh VLSI complexity results having applications to hardware implementations of neural networks and to VLSI-friendly learning algorithms. In order to estimate the area (A) and the delay (T), as well as the classical AT{sup 2}, we shall use the following {open_quote}cost functions{close_quote}: (i) the connectivity (i.e., sum of fan-ins) and the number-of-bits for representing the weights and thresholds are used as closer approximations of the area; while (ii) the fan-ins and the length of the wires are used for closer estimates of the delay. Such approximations allow us to compare the different solutions-which present very interesting fan-in dependent depth-size and area-delay tradeoffs - with respect to AT{sup 2}.

Beiu, V.

1996-12-31T23:59:59.000Z

182

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain  

SciTech Connect (OSTI)

Interface properties of La-silicate gate dielectrics on Si substrates with W or nano-sized grain W{sub 2}C gate electrodes have been investigated. A low interface state density of 2.5??10{sup 11}?cm{sup ?2}/eV has been achieved with W{sub 2}C gate electrodes, which is one third of those with W gate electrode. An interface roughness of 0.33?nm with spatial frequency comparable to the grain size of W gate electrode has been observed. Besides, an atomically flat interface of 0.12?nm has been obtained with W{sub 2}C gate electrode. The origin of flat interface may be attributed to the elimination of inhomogeneous stress by grains in metal electrode.

Tuokedaerhan, K.; Natori, K.; Iwai, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kakushima, K., E-mail: kakushima@ep.titech.ac.jp; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K. [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

2014-01-13T23:59:59.000Z

183

Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET  

E-Print Network [OSTI]

on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET Characteristics.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET

Anlage, Steven

184

Exact solutions for a universal set of quantum gates on a family of iso-spectral spin chains  

E-Print Network [OSTI]

We find exact solutions for a universal set of quantum gates on a scalable candidate for quantum computers, namely an array of two level systems. The gates are constructed by a combination of dynamical and geometrical (non-Abelian) phases. Previously these gates have been constructed mostly on non-scalable systems and by numerical searches among the loops in the manifold of control parameters of the Hamiltonian.

V. Karimipour; N. Majd

2005-09-25T23:59:59.000Z

185

Water gate array for current flow or tidal movement pneumatic harnessing system  

DOE Patents [OSTI]

The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

Gorlov, Alexander M. (Brookline, MA)

1991-01-01T23:59:59.000Z

186

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence  

SciTech Connect (OSTI)

This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davis??s existing GATE centers have become the campus??s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

Erickson, Paul

2012-05-31T23:59:59.000Z

187

Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment  

SciTech Connect (OSTI)

Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al{sub 2}O{sub 3}) on a graphene channel through nitrogen plasma treatment. The deposited Al{sub 2}O{sub 3} thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al{sub 2}O{sub 3} as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics.

Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun [Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)

2013-07-01T23:59:59.000Z

188

Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate  

DOE Patents [OSTI]

Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

Sappey, Andrew D. (Golden, CO)

1998-04-14T23:59:59.000Z

189

Coherent motion of stereocilia assures the concerted gating of hair-cell transduction channels  

E-Print Network [OSTI]

The hair cell's mechanoreceptive organelle, the hair bundle, is highly sensitive because its transduction channels open over a very narrow range of displacements. The synchronous gating of transduction channels also underlies the active hair-bundle motility that amplifies and tunes responsiveness. The extent to which the gating of independent transduction channels is coordinated depends on how tightly individual stereocilia are constrained to move as a unit. Using dual-beam interferometry in the bullfrog's sacculus, we found that thermal movements of stereocilia located as far apart as a bundle's opposite edges display high coherence and negligible phase lag. Because the mechanical degrees of freedom of stereocilia are strongly constrained, a force applied anywhere in the hair bundle deflects the structure as a unit. This feature assures the concerted gating of transduction channels that maximizes the sensitivity of mechanoelectrical transduction and enhances the hair bundle's capacity to amplify its inputs.

Andrei S. Kozlov; Thomas Risler; A. J. Hudspeth

2009-02-16T23:59:59.000Z

190

Resilience of gated avalanche photodiodes against bright illumination attacks in quantum cryptography  

E-Print Network [OSTI]

Semiconductor avalanche photodiodes (APDs) are commonly used for single photon detection in quantum key distribution. Recently, many attacks using bright illumination have been proposed to manipulate gated InGaAs APDs. In order to devise effective counter-measures, careful analysis of these attacks must be carried out to distinguish between incorrect operation and genuine loopholes. Here, we show that correctly-operated, gated APDs are immune to continuous-wave illumination attacks, while monitoring the photocurrent for anomalously high values is a straightforward counter-measure against attacks using temporally tailored light.

Z. L. Yuan; J. F. Dynes; A. J. Shields

2011-06-14T23:59:59.000Z

191

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays  

SciTech Connect (OSTI)

Low-frequency noise is used to study the electronic transport in arrays of 14?nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

Clment, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincar, 59652 Villeneuve d'Ascq (France)] [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincar, 59652 Villeneuve d'Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

2013-12-23T23:59:59.000Z

192

A proposal for the implementation of quantum gates with photonic-crystal coupled cavity waveguides  

E-Print Network [OSTI]

Quantum computers require technologies that offer both sufficient control over coherent quantum phenomena and minimal spurious interactions with the environment. We show, that photons confined to photonic crystals, and in particular to highly efficient waveguides formed from linear chains of defects doped with atoms can generate strong non-linear interactions which allow to implement both single and two qubit quantum gates. The simplicity of the gate switching mechanism, the experimental feasibility of fabricating two dimensional photonic crystal structures and integrability of this device with optoelectronics offers new interesting possibilities for optical quantum information processing networks.

Dimitris G. Angelakis; Marcelo Franca Santos; Vassilis Yannopapas; Artur Ekert

2007-04-12T23:59:59.000Z

193

Noise-Protected Gate for Six-Electron Double-Dot Qubits  

E-Print Network [OSTI]

Singlet-triplet spin qubits in six-electron double quantum dots, in moderate magnetic fields, can show superior immunity to charge noise. This immunity results from the symmetry of orbitals in the second energy shell of circular quantum dots: singlet and triplet states in this shell have identical charge distributions. Our phase-gate simulations, which include $1/f$ charge noise from fluctuating traps, show that this symmetry is most effectively exploited if the gate operation switches rapidly between sweet spots deep in the (3,3) and (4,2) charge stability regions; fidelities very close to one are predicted if subnanosecond switching can be performed.

Sebastian Mehl; David P. DiVincenzo

2014-08-05T23:59:59.000Z

194

Engineering a C-Phase quantum gate: optical design and experimental realization  

E-Print Network [OSTI]

A two qubit quantum gate, namely the C-Phase, has been realized by exploiting the longitudinal momentum (i.e. the optical path) degree of freedom of a single photon. The experimental setup used to engineer this quantum gate represents an advanced version of the high stability closed-loop interferometric setup adopted to generate and characterize 2-photon 4-qubit Phased Dicke states. Some experimental results, dealing with the characterization of multipartite entanglement of the Phased Dicke states are also discussed in detail.

Andrea Chiuri; Chiara Greganti; Paolo Mataloni

2012-04-12T23:59:59.000Z

195

Crystal Structure of the Mammalian GIRK2 KplusChannel and Gating Regulation by G Proteins PIP2 and Sodium  

SciTech Connect (OSTI)

G protein-gated K{sup +} channels (Kir3.1--Kir3.4) control electrical excitability in many different cells. Among their functions relevant to human physiology and disease, they regulate the heart rate and govern a wide range of neuronal activities. Here, we present the first crystal structures of a G protein-gated K{sup +} channel. By comparing the wild-type structure to that of a constitutively active mutant, we identify a global conformational change through which G proteins could open a G loop gate in the cytoplasmic domain. The structures of both channels in the absence and presence of PIP{sub 2} suggest that G proteins open only the G loop gate in the absence of PIP{sub 2}, but in the presence of PIP{sub 2} the G loop gate and a second inner helix gate become coupled, so that both gates open. We also identify a strategically located Na{sup +} ion-binding site, which would allow intracellular Na{sup +} to modulate GIRK channel activity. These data provide a structural basis for understanding multiligand regulation of GIRK channel gating.

M Whorton; R MacKinnon

2011-12-31T23:59:59.000Z

196

Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced by Truncated Constructs  

E-Print Network [OSTI]

Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced, United Kingdom Voltage-gated calcium channel 1 subunits consist of four domains (I­IV), each with six by the cytoplasmic I-II loop of Cav2.2. It requires transmembrane seg- ments, because the isolated Cav2.2 N terminus

Dolphin, Annette C.

197

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

198

Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks  

E-Print Network [OSTI]

Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks N. Zaslavsky Abstract Substrate hot electron stress was applied on n+ -ringed n-channel MOS capacitors with TiN/Hf-silicate. Introduction Hafnium silicate based high-j gate dielectrics have been put forth as the leading candidates

Misra, Durgamadhab "Durga"

199

ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3  

E-Print Network [OSTI]

ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3 , Bo Zhang 3 , Vincent of the algorithm used for the minimization. Index Terms -- C-Arm, computed tomography, ECG- gating, augmented arises from the synchronization with the patient's electrocardiogram (ECG), which is necessary to avoid

Paris-Sud XI, Université de

200

An energy relaxation tolerant approach to quantum entanglement, information transfer, and gates with superconducting-quantum-interference-device qubits in cavity QED  

E-Print Network [OSTI]

A scheme is proposed for realizing quantum entanglement, information transfer, CNOT gates, and SWAP gates with supercoiiducting-quantum-interference-device (SQUID) qubits in cavity QED. In the scheme, the two logical states ...

Yang, Chuiping; Chu, Shih-I; Han, Siyuan

2004-03-31T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Possible realization of entanglement, logical gates, and quantum-information transfer with superconducting-quantum-interference-device qubits in cavity QED  

E-Print Network [OSTI]

We present a scheme to achieve maximally entangled states, controlled phase-shift gate, and SWAP gate for two superconducting-quantum-interference-device (SQUID) qubits, by placing SQUIDs in a microwave cavity. We also ...

Yang, Chui-Ping; Chu, Shih-I; Han, Siyuan

2003-04-17T23:59:59.000Z

202

Circadian gating of the psbAIII high light response in Synechococcus sp. strain PCC 7942  

E-Print Network [OSTI]

(1-5 fold) during the peaks of the cycle. We also found that in a clock null strain the lack of an oscillator does not entirely negate the light response of PpsbAIII::luxAB; however, this response does not demonstrate gating. In contrast...

Shelton, Jeffrey Lyn

2000-01-01T23:59:59.000Z

203

Elsevier Science 1 Use of the GATE Monte Carlo package for dosimetry  

E-Print Network [OSTI]

Elsevier Science 1 Use of the GATE Monte Carlo package for dosimetry applications D. Visvikis, a* M Angeles, USA Abstract One of the roles for MC simulation studies is in the area of dosimetry. A number of different codes dedicated to dosimetry applications are available and widely used today, such as MCNP

Paris-Sud XI, Université de

204

How to Successfully Implement a Knowledge Management System for the Mechanical Engineering Department at Gating Incorporated  

E-Print Network [OSTI]

. With this explosive growth, it has become imperative that Gating Incorporated instill a Knowledge Management System to retain the vast amount of tacit knowledge. New products are critical for consumer product companies, so finding ways to capture the knowledge of a...

Mudd, John

2009-05-15T23:59:59.000Z

205

Performance of a 512 x 512 Gated CMOS Imager with a 250 ps Exposure Time  

SciTech Connect (OSTI)

We describe the performance of a 512x512 gated CMOS read out integrated circuit (ROIC) with a 250 ps exposure time. A low-skew, H-tree trigger distribution system is used to locally generate individual pixel gates in each 8x8 neighborhood of the ROIC. The temporal width of the gate is voltage controlled and user selectable via a precision potentiometer. The gating implementation was first validated in optical tests of a 64x64 pixel prototype ROIC developed as a proof-of-concept during the early phases of the development program. The layout of the H-Tree addresses each quadrant of the ROIC independently and admits operation of the ROIC in two modes. If common mode triggering is used, the camera provides a single 512x512 image. If independent triggers are used, the camera can provide up to four 256x256 images with a frame separation set by the trigger intervals. The ROIC design includes small (sub-pixel) optical photodiode structures to allow test and characterization of the ROIC using optical sources prior to bump bonding. Reported test results were obtained using short pulse, second harmonic Ti:Sapphire laser systems operating at ?~ 400 nm at sub-ps pulse widths.

Teruya, A T; Moody, J D; Hsing, W W; Brown, C G; Griffin, M; Mead, A S

2012-10-01T23:59:59.000Z

206

Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors  

SciTech Connect (OSTI)

A prior requirement of any developed transistor for practical use is the stability test. Random network carbon nanotube-thin film transistor (CNT-TFT) was fabricated on SiO{sub 2}/Si. Gate bias stress stability was investigated with various passivation layers of HfO{sub 2} and Al{sub 2}O{sub 3}. Compared to the threshold voltage shift without passivation layer, the measured values in the presence of passivation layers were reduced independent of gate bias polarity except HfO{sub 2} under positive gate bias stress (PGBS). Al{sub 2}O{sub 3} capping layer was found to be the best passivation layer to prevent ambient gas adsorption, while gas adsorption on HfO{sub 2} layer was unavoidable, inducing surface charges to increase threshold voltage shift in particular for PGBS. This high performance in the gate bias stress test of CNT-TFT even superior to that of amorphous silicon opens potential applications to active TFT industry for soft electronics.

Won Lee, Sang [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Suh, Dongseok, E-mail: energy.suh@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Young Lee, Si [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Hee Lee, Young, E-mail: leeyoung@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-04-21T23:59:59.000Z

207

Needle-based reflection refractometry of scattering samples using coherence-gated  

E-Print Network [OSTI]

effects of internal refractive index variation in near-infrared optical tomography: a finite element, and K. D. Paulsen, "Effects of refractive index on near- infrared tomography of the breast," Appl. OptNeedle-based reflection refractometry of scattering samples using coherence-gated detection Adam M

Boppart, Stephen

208

Unique Functional Properties of a Sensory Neuronal P2X ATP-Gated Channel from Zebrafish  

E-Print Network [OSTI]

of native P2X receptor channels evokes a fast inward current carried by mono- valent and calcium ions in a broad range of calcium- dependent signaling events from the neurogenic control of smooth muscle, and a cysteine-rich extracellular loop resembles that of recently discovered proton-gated channels (Wald- mann

Séguéla, Philippe

209

Ligand Gated Ion Channel Functionality Assays Robert P. Hayes, Kumud Raj Poudel and James A. Brozik  

E-Print Network [OSTI]

was to devise a method suitable to test the functionality of the entire family of cysteine-loop ligand gated ion substrate was infused with calcium ions that were trapped by the POPC bilayer. Once the assembly was formed. Electrochemical measurements were taken using a calcium ion sensitive electrode. The assemblies were interrogated

Collins, Gary S.

210

International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control  

E-Print Network [OSTI]

International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control Who we are: The International Center for Tropical Agriculture (CIAT) is a member institute of the Consultative Group on International Agricultural Research (CIAR). Based in Cali, Colombia, we focus

Ferrara, Katherine W.

211

Accuracy of gates in a quantum computer based on vibrational eigenstates Dmitri Babikov  

E-Print Network [OSTI]

of quantum gates in such a system. Optimal control theory and numerical time-propagation of vibrational wave the computational sciences:2 ``Quantum computing would be to ordinary com- puting what nuclear energy is to fire'' consisting of two states 0 and 1 that have been harnessed for running quantum computing algorithms, setting

Reid, Scott A.

212

Spin transistor operation driven by the Rashba spin-orbit coupling in the gated nanowire  

SciTech Connect (OSTI)

A theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the electron current flowing from the source (spin injector) to the drain (spin detector) oscillates as a function of the gate voltage, which results from the precession of the electron spin caused by the Rashba spin-orbit interaction in the vicinity of the gate. We have studied the operation of the spin transistor under the following conditions: (A) the full spin polarization of electrons in the contacts, zero temperature, and the single conduction channel corresponding to the lowest-energy subband of the transverse motion and (B) the partial spin polarization of the electrons in the contacts, the room temperature, and the conduction via many transverse subbands taken into account. For case (A), the spin-polarized current can be switched on/off by the suitable tuning of the gate voltage, for case (B) the current also exhibits the pronounced oscillations but with no-zero minimal values. The computational results obtained for case (B) have been compared with the recent experimental data and a good agreement has been found.

Wjcik, P.; Adamowski, J., E-mail: adamowski@fis.agh.edu.pl; Spisak, B. J.; Wo?oszyn, M. [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, Krakw (Poland)

2014-03-14T23:59:59.000Z

213

Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors  

E-Print Network [OSTI]

Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors Iddo-walled carbon nanotubes (SWNTs) and graphene can function as highly sensitive nanoscale (bio)sensors in solution. Here, we compare experimentally how SWNT and graphene transistors respond to changes in the composition

Dekker, Cees

214

7-Gate Kinetic AMPA Model Kinetics to match EPSCs from calyx of Held  

E-Print Network [OSTI]

7-Gate Kinetic AMPA Model · Kinetics to match EPSCs from calyx of Held · Multiple closed, open and EPSC amplitude Bruce Graham Department of Computing Science and Mathematics, University of Stirling, U, including the calyx of Held in the mammalian auditory system. Such depression may be mediated

Graham, Bruce

215

REAL-TIME DUAL-MICROPHONE SPEECH ENHANCEMENT USING FIELD PROGRAMMABLE GATE ARRAYS  

E-Print Network [OSTI]

REAL-TIME DUAL-MICROPHONE SPEECH ENHANCEMENT USING FIELD PROGRAMMABLE GATE ARRAYS David Halupka@eecg}.toronto.edu ABSTRACT This paper discusses an implementation of a dual- microphone phase-based speech enhancement or irrelevant conversations, are present has fueled research interest in the areas of speech enhancement

Sheikholeslami, Ali

216

Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology  

E-Print Network [OSTI]

of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 ?? tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped Ta...

Lu, Jiang

2007-04-25T23:59:59.000Z

217

Method and system for measuring gate valve clearances and seating force  

DOE Patents [OSTI]

Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner.

Casada, Donald A. (Knoxville, TN); Haynes, Howard D. (Knoxville, TN); Moyers, John C. (Oak Ridge, TN); Stewart, Brian K. (Burns, TN)

1996-01-01T23:59:59.000Z

218

Gate Voltage Control of Oxygen Diffusion on Graphene Dr. Jorge O. Sofo  

E-Print Network [OSTI]

Gate Voltage Control of Oxygen Diffusion on Graphene Dr. Jorge O. Sofo Associate Professor conductivity (twice that of diamond). Due to Carbon's affinity for tetrahedral bonding, its surface is amenable atoms. Our research focuses on the attachment and diffusion of different atomic species to the surface

Bjrnstad, Ottar Nordal

219

Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights  

E-Print Network [OSTI]

PWP-076 Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow.ucei.berkeley.edu/ucei #12;Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights- mission use. The North American Electric Reliability Council NERC is in the process of implementing

California at Berkeley. University of

220

Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in  

E-Print Network [OSTI]

Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in Cardiac Myocytes H-dependent inactivation can be modulated by changes in cytoplasmic Mg~+. INTRODUCTION Magnesium is an important constituent of the intracellular milieu. Despite the importance of magnesium as an essential cofactor

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1  

E-Print Network [OSTI]

Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1 J. Yan,1,2 R. J. Suess,3 T. E photoresponse in gapped bilayer graphene was investigated by optical and transport measurements. A pulse There is growing recognition that graphene has excep- tional potential as a new optoelectronic material, which has

Murphy, Thomas E.

222

Current transport, gate dielectrics and band gap engineering in graphene devices  

E-Print Network [OSTI]

Current transport, gate dielectrics and band gap engineering in graphene devices Wenjuan Zhu In this work, we studied current transport in mono-, bi- and tri-layer graphene. We find that both of the electrical field of the substrate surface polar phonons in bi-layer/tri-layer graphenes. We also find

Perebeinos, Vasili

223

Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent regime  

E-Print Network [OSTI]

Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent as promising thermoelectric devices1 . In comparison to their bulk counterparts, they provide opportunities of thermoelectric conversion at a given temperature T . Indeed, they allow to reduce the phonon contribution ph

Recanati, Catherine

224

Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate  

E-Print Network [OSTI]

Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate Ludovic Cassan1 Abstract: The article describes the hydraulic functioning of a mixed water level control hydro- mechanical of the model to reproduce the functioning of this complex hydro-mechanical system. CE database Subject headings

Paris-Sud XI, Université de

225

Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints  

E-Print Network [OSTI]

Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints Yoni in a fast circuit by the same factor does not yield an energy-efficient design, and we characterize efficient. A design implementation is considered to be energy efficient when it has the highest performance

Kolodny, Avinoam

226

Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction  

E-Print Network [OSTI]

Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing-8087 Received 13 April 2005; accepted 6 June 2005; published online 26 July 2005 A silicate reaction between process route to interface elimination, while producing a silicate dielectric with a higher temperature

Garfunkel, Eric

227

Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor  

E-Print Network [OSTI]

monitoring, solid-oxide fuel cells, and coal gasification, require operation at much higher temperatures thanSulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor Yung Ho to hydrogen sulfide, even in the presence of hydrogen or oxygen at partial pressures of 20­600 times greater

Tobin, Roger G.

228

Robust quantum gates and a bus architecture for quantum computing with rare-earth-ion doped crystals  

E-Print Network [OSTI]

We present a composite pulse controlled phase gate which together with a bus architecture improves the feasibility of a recent quantum computing proposal based on rare-earth-ion doped crystals. Our proposed gate operation is tolerant to variations between ions of coupling strengths, pulse lengths, and frequency shifts, and it achieves worst case fidelities above 0.999 with relative variations in coupling strength as high as 10% and frequency shifts up to several percent of the resonant Rabi frequency of the laser used to implement the gate. We outline an experiment to demonstrate the creation and detection of maximally entangled states in the system.

Janus Wesenberg; Klaus Moelmer

2003-01-09T23:59:59.000Z

229

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission+Bay,+San+Francisco,+CA/@37.7996107,-122.4363906,... 1/2  

E-Print Network [OSTI]

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF has tolls. Directions from Golden Gate Bridge to UCSF/Mission Bay San Francisco, CA 94129 Golden Gate;8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission

Derisi, Joseph

230

The susceptibility of silicon-ion implanted gate insulators to x-ray radiation-induced defect generation  

SciTech Connect (OSTI)

This paper examines the x-ray susceptibility of silicon-ion implanted gate insulators of insulated gate-field effect transistors (IGFETs). It is found that silicon-ion implanted gate insulators appear to be much more susceptible to x-ray radiation induced defect generation than unimplanted devices. The residual defect density in silicon-implanted devices, following x-ray radiation, and subsequent postmetal annealing for up to 60 min is found to be greater than that in unimplanted devices. The results with silicon ions indicate that if the insulator is damaged by such a species during processing, as might occur due to knock-on from the gate electrode during source/drain formation, unannealable defects will form which would also tend to make the device structure more susceptible to radiation damage in a hostile environment, or to large hot- electron drift in conventional use.

Reisman, A.; Sune, C.T.; Williams, C.K. (MCNC, Research Triangle Park, NC (US))

1991-03-01T23:59:59.000Z

231

Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan- Dearborn  

Broader source: Energy.gov [DOE]

Presentation given by Regents University of Michigan at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

232

Regulation of N-type Voltage-Gated Calcium Channels and Presynaptic Function by Cyclin-Dependent Kinase 5  

E-Print Network [OSTI]

N-type voltage-gated calcium channels localize to presynaptic nerve terminals and mediate key events including synaptogenesis and neurotransmission. While several kinases have been implicated in the modulation of calcium ...

Su, SusanC.

233

Abstract----Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is  

E-Print Network [OSTI]

and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2- D numerical. The quantitative analysis were conducted by Silvaco Atlas, a 2-D numerical device simulator [4]. We read

Lee, Jong Duk

234

E-Print Network 3.0 - atp-gated p2x4 ion Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ion Search Powered by Explorit Topic List Advanced Search Sample search results for: atp-gated p2x4 ion Page: << < 1 2 3 4 5 > >> 1 introduction browse basic search advanced...

235

Optimization of Enzymatic Biochemical Logic for Noise Reduction and Scalability: How Many Biocomputing Gates Can Be Interconnected in a Circuit?  

E-Print Network [OSTI]

We report an experimental evaluation of the "input-output surface" for a biochemical AND gate. The obtained data are modeled within the rate-equation approach, with the aim to map out the gate function and cast it in the language of logic variables appropriate for analysis of Boolean logic for scalability. In order to minimize "analog" noise, we consider a theoretical approach for determining an optimal set for the process parameters to minimize "analog" noise amplification for gate concatenation. We establish that under optimized conditions, presently studied biochemical gates can be concatenated for up to order 10 processing steps. Beyond that, new paradigms for avoiding noise build-up will have to be developed. We offer a general discussion of the ideas and possible future challenges for both experimental and theoretical research for advancing scalable biochemical computing.

V. Privman; G. Strack; D. Solenov; M. Pita; E. Katz

2008-09-13T23:59:59.000Z

236

Hybrid Photonic Hyper-Controlled-Not Gate with the Dipole Induced Transparency in Weak-Coupling Regime  

E-Print Network [OSTI]

We present a hybrid hyper-controlled-not (hyper-CNOT) gate for hyperparallel photonic quantum computing based on both the polarization and spatial-mode degrees of freedom (DOFs) of a two-photon system, which is identical to two CNOT gates operating at the same time on four photons in one DOF. This proposal is implemented with the optical reflection-transmission property of a diamond nitrogen-vacancy center embedded in a photonic crystal cavity coupled to two waveguides, which is suitable for the robust and flexible quantum information processing based on both the spatial-mode and polarization DOFs of photon systems in Purcell regime. With the hybrid hyper-CNOT gate, more quantum logic gate operations can be accomplished with less resources in a definite period of time, and the influence from photonic dissipation and environment noise can be suppressed.

Bao-Cang Ren; Fu-Guo Deng

2014-11-02T23:59:59.000Z

237

Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes  

E-Print Network [OSTI]

We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

Jun Zhang; Rob Thew; Claudio Barreiro; Hugo Zbinden

2009-08-16T23:59:59.000Z

238

A communication-efficient nonlocal measurement with application to communication complexity and bipartite gate capacities  

E-Print Network [OSTI]

Two dual questions in quantum information theory are to determine the communication cost of simulating a bipartite unitary gate, and to determine their communication capacities. We present a bipartite unitary gate with two surprising properties: 1) simulating it with the assistance of unlimited EPR pairs requires far more communication than with a better choice of entangled state, and 2) its communication capacity is far lower than its capacity to create entanglement. This suggests that 1) unlimited EPR pairs are not the most general model of entanglement assistance for two-party communication tasks, and 2) the entangling and communicating abilities of a unitary interaction can vary nearly independently. The technical contribution behind these results is a communication-efficient protocol for measuring whether an unknown shared state lies in a specified rank-one subspace or its orthogonal complement.

Aram W. Harrow; Debbie W. Leung

2011-03-04T23:59:59.000Z

239

Risk analysis study of non-routine turbine/generator shutdown events and intake gate evaluation  

SciTech Connect (OSTI)

The Corps of Engineers has undertaken a study to perform a reliability and risk analysis for evaluating non-routine turbine/generator shutdown scenarios. The study will evaluate the risks associated with events that would require a powerhouse to shut down a turbine/generator by using intake gates. The goal of this project is to estimate any potential damage that could occur for various intake gate configurations and closure times. The data obtained can also be used to evaluate any of the systems that affect reliability of the turbine/generator using established methods of risk analysis. This paper will briefly outline the study objectives and describe the progress of the study to this point.

Bardy, D.M. [Hydroelectric Design Center, Portland, OR (United States)

1995-12-31T23:59:59.000Z

240

2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates  

ScienceCinema (OSTI)

The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

Chu, Steven (U.S. Department of Energy Secretary); Gates, Bill (Microsoft, Chairman); Podesta, John (Center for American Progress, Chair and Counselor)

2012-03-21T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Attosecond x-ray source generation from two-color polarized gating plasmonic field enhancement  

SciTech Connect (OSTI)

The plasmonic field enhancement from the vicinity of metallic nanostructures as well as the polarization gating technique has been utilized to the generation of the high order harmonic and the single attosecond x-ray source. Through numerical solution of the time-dependent Schrdinger equation, for moderate the inhomogeneity and the polarized angle of the two fields, we find that not only the harmonic plateau has been extended and enhanced but also the single short quantum path has been selected to contribute to the harmonic. As a result, a series of 50 as pulses around the extreme ultraviolet and the x-ray regions have been obtained. Furthermore, by investigating the other parameters effects on the harmonic emission, we find that this two-color polarized gating plasmonic field enhancement scheme can also be achieved by the multi-cycle pulses, which is much better for experimental realization.

Feng, Liqiang [College of Science, Liaoning University of Technology, Jinzhou 121000 (China) [College of Science, Liaoning University of Technology, Jinzhou 121000 (China); State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Yuan, Minghu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China)] [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Chu, Tianshu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China) [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Institute for Computational Sciences and Engineering, Laboratory of New Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China)

2013-12-15T23:59:59.000Z

242

Probing spin entanglement by gate-voltage-controlled interference of current correlation in quantum spin Hall insulators  

E-Print Network [OSTI]

We propose an entanglement detector composed of two quantum spin Hall insulators and a side gate deposited on one of the edge channels. For an ac gate voltage, the differential noise contributed from the entangled electron pairs exhibits the nontrivial step structures, from which the spin entanglement concurrence can be easily obtained. The possible spin dephasing effects in the quantum spin Hall insulators are also included.

Wei Chen; Z. D. Wang; R. Shen; D. Y. Xing

2014-05-21T23:59:59.000Z

243

Tri-Gate Bulk CMOS Technology for Improved SRAM Scalability Changhwan Shin, Borivoje Nikoli, Tsu-Jae King Liu  

E-Print Network [OSTI]

] is an example of such a design; it utilizes a gate electrode that is physically wrapped around the top portion along a poly-Si gate electrode in an SRAM array, for 15nm nominal STI recess depth. The sequence), pull- 570nm 263nm 570nm 263nm PG1 PD1 PU1 PU2 PD2 PG2 (a) 570nm 263nm 570nm 263nm PG1 PD1 PU1 PU2 PD2

Nikolic, Borivoje

244

A comparison of the full custom, standard cell and gate array design methodologies  

E-Print Network [OSTI]

A COMPARISON OF THE FULL CUSTOM, STANDARD CELL AND GATE ARRAY DESIGN METHODOLOGIES A Thesis by KING-WAI I&WAN Submitted to the Office of Graduate Studies of Texas A&M University in partial fulffllment of the requirements for the degree... approaches, the designers can select appropriate cells in the libraries which meet their specific requirements such as driving capability and power consumption. But standard cell designs can be used to implement specialized macros such as multi-port...

Kwan, King-Wai

1990-01-01T23:59:59.000Z

245

Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode  

SciTech Connect (OSTI)

We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520?nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women's Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

2014-01-27T23:59:59.000Z

246

A 200 C Universal Gate Driver Integrated Circuit for Extreme Environment Applications  

SciTech Connect (OSTI)

High-temperature power converters (dc-dc, dc-ac, etc.) have enormous potential in extreme environment applications, including automotive, aerospace, geothermal, nuclear, and well logging. For successful realization of such high-temperature power conversion modules, the associated control electronics also need to perform at high temperature. This paper presents a silicon-on-insulator (SOI) based high-temperature gate driver integrated circuit (IC) incorporating an on-chip low-power temperature sensor and demonstrating an improved peak output current drive over our previously reported work. This driver IC has been primarily designed for automotive applications, where the underhood temperature can reach 200 C. This new gate driver prototype has been designed and implemented in a 0.8 {micro}m, 2-poly, and 3-metal bipolar CMOS-DMOS (Double-Diffused Metal-Oxide Semiconductor) on SOI process and has been successfully tested for up to 200 C ambient temperature driving a SiC MOSFET and a SiC normally-ON JFET. The salient feature of the proposed universal gate driver is its ability to drive power switches over a wide range of gate turn-ON voltages such as MOSFET (0 to 20 V), normally-OFF JFET (-7 to 3 V), and normally-ON JFET (-20 to 0 V). The measured peak output current capability of the driver is around 5 A and is thus capable of driving several power switches connected in parallel. An ultralow-power on-chip temperature supervisory circuit has also been integrated into the die to safeguard the driver circuit against excessive die temperature ({ge}220 C). This approach utilizes increased diode leakage current at higher temperature to monitor the die temperature. The power consumption of the proposed temperature sensor circuit is below 10 {micro}W for operating temperature up to 200 C.

Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Islam, Syed K [ORNL; Blalock, Benjamin J [ORNL

2012-01-01T23:59:59.000Z

247

Modeling the current behavior of the digital BiCMOS gate  

E-Print Network [OSTI]

CMOS gate showing the pull-up and pull-down sections 6 Schematics of the pull-up section Pull-up equivalent circuit model . Equivalent circuit model 10 Simplified equivalent circuit model Equivalent circuit model neglecting ATF Collector current... with ATF effect vs without ATF effect 14 Modified circuit model 16 10 Comparison of this work versus SPICE simulation Typical collector current response 17 12 13 Equivalent circuit for 0 ? t0 Equivalent circuit after t0 21 14 Base current...

Tang, Zhilong

1995-01-01T23:59:59.000Z

248

Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor  

E-Print Network [OSTI]

new circuit topology for IGFET, which on average shows 33.8% lower leakage and 34.9% lower area at the cost of 2.8% increase in total active mode power, for basic logic gates. Finally, we showed a technique for reducing leakage of minimum sized... ????????????????????????????????????????????????? 5 III.1 Power-delay product for FO4 inverter ????????????????????????????????????? 12 III.2 Power-delay product for 51 Stage ring oscillator ??????????????????????????? 12 IV.1 Delay distribution histogram...

Singh, Amrinder

2011-10-21T23:59:59.000Z

249

Touch sensors based on planar liquid crystal-gated-organic field-effect transistors  

SciTech Connect (OSTI)

We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 ?m thick LC layer (4-cyano-4{sup ?}-pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 ?l/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm{sup 2}/Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V{sub D}) and gate (V{sub G}) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V{sub D} and V{sub G}. The best voltage combination was V{sub D} = ?0.2 V and V{sub G} = ?1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors.

Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Kim, Hwajeong [Organic Nanoelectronics Laboratory, Department of Chemical Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Priority Research Center, Research Institute of Advanced Energy Technology, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Lee, Joon-Hyung [School of Materials Science and Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Park, Soo-Young; Kang, Inn-Kyu [Department of Polymer Science and Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of)

2014-09-15T23:59:59.000Z

250

Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data  

E-Print Network [OSTI]

Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm...

Chen, Ze; Chen, Jin-Da; Zhang, Xiu-Ling; Sun, Zhi-Yu; Huang, Wen-Xue; Wang, Jian-Song; Guo, Zhong-Yan; Xiao, Guo-Qing

2013-01-01T23:59:59.000Z

251

Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data  

E-Print Network [OSTI]

Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm. The module can also be applied to other cases for precisely simulating optical photons propagating in scintillators.

Ze Chen; Zheng-Guo Hu; Jin-Da Chen; Xiu-Ling Zhang; Zhi-Yu Sun; Wen-Xue Huang; Jian-Song Wang; Zhong-Yan Guo; Guo-Qing Xiao

2013-09-15T23:59:59.000Z

252

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors  

SciTech Connect (OSTI)

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (?130?C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for free without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k?=?3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

2014-02-24T23:59:59.000Z

253

Design and optimisation of quantum logic circuits for a three-qubit Deutsch-Jozsa algorithm implemented with optically-controlled, solid-state quantum logic gates  

E-Print Network [OSTI]

We analyse the design and optimisation of quantum logic circuits suitable for the experimental demonstration of a three-qubit quantum computation prototype based on optically-controlled, solid-state quantum logic gates. In these gates, the interaction between two qubits carried by the electron-spin of donors is mediated by the optical excitation of a control particle placed in their proximity. First, we use a geometrical approach for analysing the entangling characteristics of these quantum gates. Then, using a genetic programming algorithm, we develop circuits for the refined Deutsch-Jozsa algorithm investigating different strategies for obtaining short total computational times. We test two separate approaches based on using different sets of entangling gates with the shortest possible gate computation time which, however, does not introduce leakage of quantum information to the control particles. The first set exploits fast approximations of controlled-phase gates as entangling gates, while the other one arbitrary entangling gates with a shorter gate computation time compared to the first set. We have identified circuits with consistently shorter total computation times when using controlled-phase gates.

A. Del Duce; S. Savory; P. Bayvel

2009-10-09T23:59:59.000Z

254

On the interest of carbon-coated plasma reactor for advanced gate stack etching processes  

SciTech Connect (OSTI)

In integrated circuit fabrication the most wide spread strategy to achieve acceptable wafer-to-wafer reproducibility of the gate stack etching process is to dry-clean the plasma reactor walls between each wafer processed. However, inherent exposure of the reactor walls to fluorine-based plasma leads to formation and accumulation of nonvolatile fluoride residues (such as AlF{sub x}) on reactor wall surfaces, which in turn leads to process drifts and metallic contamination of wafers. To prevent this while keeping an Al{sub 2}O{sub 3} reactor wall material, a coating strategy must be used, in which the reactor is coated by a protective layer between wafers. It was shown recently that deposition of carbon-rich coating on the reactor walls allows improvements of process reproducibility and reactor wall protection. The authors show that this strategy results in a higher ion-to-neutral flux ratio to the wafer when compared to other strategies (clean or SiOCl{sub x}-coated reactors) because the carbon walls load reactive radical densities while keeping the same ion current. As a result, the etching rates are generally smaller in a carbon-coated reactor, but a highly anisotropic etching profile can be achieved in silicon and metal gates, whose etching is strongly ion assisted. Furthermore, thanks to the low density of Cl atoms in the carbon-coated reactor, silicon etching can be achieved almost without sidewall passivation layers, allowing fine critical dimension control to be achieved. In addition, it is shown that although the O atom density is also smaller in the carbon-coated reactor, the selectivity toward ultrathin gate oxides is not reduced dramatically. Furthermore, during metal gate etching over high-k dielectric, the low level of parasitic oxygen in the carbon-coated reactor also allows one to minimize bulk silicon reoxidation through HfO{sub 2} high-k gate dielectric. It is then shown that the BCl{sub 3} etching process of the HfO{sub 2} high-k material is highly selective toward the substrate in the carbon-coated reactor, and the carbon-coating strategy thus allows minimizing the silicon recess of the active area of transistors. The authors eventually demonstrate that the carbon-coating strategy drastically reduces on-wafer metallic contamination. Finally, the consumption of carbon from the reactor during the etching process is discussed (and thus the amount of initial deposit that is required to protect the reactor walls) together with the best way of cleaning the reactor after a silicon etching process.

Ramos, R.; Cunge, G.; Joubert, O. [Freescale Semiconductor Inc., 850 Rue Jean Monnet, 38921 Crolles Cedex (France) and Laboratoire des Technologies de la Microelectronique, CNRS, 17 Rue des Martyrs (c/o CEA-LETI), 38054 Grenoble Cedex 9 (France); Laboratoire des Technologies de la Microelectronique, CNRS, 17 Rue des Martyrs (c/o CEA-LETI), 38054 Grenoble Cedex 9 (France)

2007-03-15T23:59:59.000Z

255

Respiration Induced Heart Motion and Indications of Gated Delivery for Left-Sided Breast Irradiation  

SciTech Connect (OSTI)

Purpose: To investigate respiration-induced heart motion for left-sided breast irradiation using a four-dimensional computed tomography (4DCT) technique and to determine novel indications to assess heart motion and identify breast patients who may benefit from a gated treatment. Methods and Materials: Images of 4DCT acquired during free breathing for 20 left-sided breast cancer patients, who underwent whole breast irradiation with or without regional nodal irradiation, were analyzed retrospectively. Dose distributions were reconstructed in the phases of 0%, 20%, and 50%. The intrafractional heart displacement was measured in three selected transverse CT slices using D{sub LAD} (the distance from left ascending aorta to a fixed line [connecting middle point of sternum and the body] drawn on each slice) and maximum heart depth (MHD, the distance of the forefront of the heart to the line). Linear regression analysis was used to correlate these indices with mean heart dose and heart dose volume at different breathing phases. Results: Respiration-induced heart displacement resulted in observable variations in dose delivered to the heart. During a normal free-breathing cycle, heart-induced motion D{sub LAD} and MHD changed up to 9 and 11 mm respectively, resulting in up to 38% and 39% increases of mean doses and V{sub 25.2} for the heart. MHD and D{sub LAD} were positively correlated with mean heart dose and heart dose volume. Respiratory-adapted gated treatment may better spare heart and ipsilateral-lung compared with the conventional non-gated plan in a subset of patients with large D{sub LAD} or MHD variations. Conclusion: Proposed indices offer novel assessment of heart displacement based on 4DCT images. MHD and D{sub LAD} can be used independently or jointly as selection criteria for respiratory gating procedure before treatment planning. Patients with great intrafractional MHD variations or tumor(s) close to the diaphragm may particularly benefit from the gated treatment.

Qi, X. Sharon, E-mail: xiangrong.qi@ucdenver.edu [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Hu, Angela [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Wang Kai [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States); Newman, Francis [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Crosby, Marcus; Hu Bin; White, Julia; Li, X. Allen [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States)

2012-04-01T23:59:59.000Z

256

Implementation of controlled phase shift gates and Collins version of Deutsch-Jozsa algorithm on a quadrupolar spin-7/2 nucleus using non-adiabatic geometric phases  

E-Print Network [OSTI]

In this work Controlled phase shift gates are implemented on a qaudrupolar system, by using non-adiabatic geometric phases. A general procedure is given, for implementing controlled phase shift gates in an 'N' level system. The utility of such controlled phase shift gates, is demonstrated here by implementing 3-qubit Deutsch-Jozsa algorithm on a 7/2 quadrupolar nucleus oriented in a liquid crystal matrix.

T. Gopinath; Anil Kumar

2009-09-22T23:59:59.000Z

257

Patient radiation dose in prospectively gated axial CT coronary angiography and retrospectively gated helical technique with a 320-detector row CT scanner  

SciTech Connect (OSTI)

Purpose: The aim of this study was to evaluate radiation dose to patients undergoing computed tomography coronary angiography (CTCA) for prospectively gated axial (PGA) technique and retrospectively gated helical (RGH) technique. Methods: Radiation doses were measured for a 320-detector row CT scanner (Toshiba Aquilion ONE) using small sized silicon-photodiode dosimeters, which were implanted at various tissue and organ positions within an anthropomorphic phantom for a standard Japanese adult male. Output signals from photodiode dosimeters were read out on a personal computer, from which organ and effective doses were computed according to guidelines published in the International Commission on Radiological Protection Publication 103. Results: Organs that received high doses were breast, followed by lung, esophagus, and liver. Breast doses obtained with PGA technique and a phase window width of 16% at a simulated heart rate of 60 beats per minute were 13 mGy compared to 53 mGy with RGH technique using electrocardiographically dependent dose modulation at the same phase window width as that in PGA technique. Effective doses obtained in this case were 4.7 and 20 mSv for the PGA and RGH techniques, respectively. Conversion factors of dose length product to the effective dose in PGA and RGH were 0.022 and 0.025 mSv mGy{sup -1} cm{sup -1} with a scan length of 140 mm. Conclusions: CTCA performed with PGA technique provided a substantial effective dose reduction, i.e., 70%-76%, compared to RGH technique using the dose modulation at the same phase windows as those in PGA technique. Though radiation doses in CTCA with RGH technique were the same level as, or some higher than, those in conventional coronary angiography (CCA), the use of PGA technique reduced organ and effective doses to levels less than CCA except for breast dose.

Seguchi, Shigenobu; Aoyama, Takahiko; Koyama, Shuji; Fujii, Keisuke; Yamauchi-Kawaura, Chiyo [Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan) and Department of Medical Technology, Nagoya Daini Red Cross Hospital, Myouken-chou, Showa-ku, Nagoya 466-8650 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan); Section of Radiological Protection, National Institute of Radiological Sciences, Anagawa, Inage-ku, Chiba 263-8555 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan)

2010-11-15T23:59:59.000Z

258

Universal conductance fluctuations in electrolyte-gated SrTiO{sub 3} nanostructures  

SciTech Connect (OSTI)

We report low-temperature magnetoconductance measurements of a patterned two-dimensional electron system at the surface of strontium titanate, gated by an ionic liquid electrolyte. We observe universal conductance fluctuations, a signature of phase-coherent transport in mesoscopic devices. From the universal conductance fluctuations, we extract an electron dephasing rate linear in temperature, characteristic of electron-electron interaction in a disordered conductor. The dephasing rate has a temperature-independent offset, which could possibly be explained by the presence of unscreened local magnetic moments in the sample.

Stanwyck, Sam W. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Gallagher, P.; Williams, J. R.; Goldhaber-Gordon, David [Department of Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Physics, Stanford University, Stanford, California 94305 (United States)

2013-11-18T23:59:59.000Z

259

Excitation spectrum as a resource for efficient two-qubit entangling gates  

E-Print Network [OSTI]

Physical systems representing qubits typically have one or more accessible quantum states in addition to the two states that encode the qubit. We demonstrate that active involvement of such auxiliary states can be beneficial in constructing entangling two-qubit operations. We investigate the general case of two multi-state quantum systems coupled via a quantum resonator. The approach is illustrated with the examples of three systems: self-assembled InAs/GaAs quantum dots, NV-centers in diamond, and superconducting transmon qubits. Fidelities of the gate operations are calculated based on numerical simulations of each system.

Dmitry Solenov; Sophia E. Economou; Thomas L. Reinecke

2014-04-03T23:59:59.000Z

260

Field programmable gate array-assigned complex-valued computation and its limits  

SciTech Connect (OSTI)

We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.

Bernard-Schwarz, Maria, E-mail: maria.bernardschwarz@ni.com [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria); Zwick, Wolfgang; Klier, Jochen [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Wenzel, Lothar [National Instruments, 11500 N MOPac Expy, Austin, Texas 78759 (United States); Grschl, Martin [Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria)

2014-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
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261

Project W-320, 241-C-106 sluicing: Civil/structural calculations. Volume 8  

SciTech Connect (OSTI)

This supporting document has been prepared to make the FDNW civil/structural calculations for Project W-320 readily retrievable.

Bailey, J.W.

1998-07-23T23:59:59.000Z

262

Project W-320, 241-C-106 sluicing: Piping calculations. Volume 4  

SciTech Connect (OSTI)

This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable. The objective of this calculation is to perform the structural analysis of the Pipe Supports designed for Slurry and Supernate transfer pipe lines in order to meet the requirements of applicable ASME codes. The pipe support design loads are obtained from the piping stress calculations W320-27-I-4 and W320-27-I-5. These loads are the total summation of the gravity, pressure, thermal and seismic loads. Since standard typical designs are used for each type of pipe support such as Y-Stop, Guide and Anchors, each type of support is evaluated for the maximum loads to which this type of supports are subjected. These loads are obtained from the AutoPipe analysis and used to check the structural adequacy of these supports.

Bailey, J.W.

1998-07-24T23:59:59.000Z

263

Project W-320, 241-C-106 sluicing piping calculations, Volume 7  

SciTech Connect (OSTI)

The object of this report is to calculate the hydraulic forces imposed at the sluicer nozzle. This is required by Project W-320 waste retrieval for tank 241-C-106. The method of analysis used is Bernoulli`s momentum equation for stead flow.

Bailey, J.W.

1998-07-29T23:59:59.000Z

264

Project W-320, 241-C-106 sluicing: Civil/structural calculations. Volume 5  

SciTech Connect (OSTI)

This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable.

Bailey, J.W.

1998-07-24T23:59:59.000Z

265

Project W-320, 241-C-106 sluicing: Civil/structural calculations. Volume 3  

SciTech Connect (OSTI)

This supporting document has been prepared to make the FDNW civil/structural calculations for Project W-320 readily retrievable. The Equipment Removal System (ERS) has been identified by WHC as not having any safety class 1 items present in the tank pits during equipment removal activities, Documentation of this finding is provided in Letter of Instruction 3/1 Analysis Requirements for Project W-320 Equipment Removal System (REF: LOI KGS-94-013). Based on this specific direction from WHC, 3/1 analysis for any component of the Project W-320 ERS is required. No further documentation of non-safety impacting safety items is required per DOE-RL Audit finding No.90-02, and filing of this memorandum in the W-320 project files satisfies the intent of the referenced DOE observation.

Bailey, J.W.

1998-07-24T23:59:59.000Z

266

Project W-320, tank 241-C-106 sluicing acceptance for beneficial use  

SciTech Connect (OSTI)

The purpose of this document is to identify the Project W-320 Chiller Documentation required to be turned over from the Projects Organization to Tank Farm Operations as part of the acceptance of the new equipment for beneficial use.

BAILEY, J.W.

1999-05-18T23:59:59.000Z

267

Project W-320, 241-C-106 sluicing electrical calculations, Volume 2  

SciTech Connect (OSTI)

This supporting document has been prepared to make the FDNW calculations for Project W-320, readily retrievable. These calculations are required: To determine the power requirements needed to power electrical heat tracing segments contained within three manufactured insulated tubing assemblies; To verify thermal adequacy of tubing assembly selection by others; To size the heat tracing feeder and branch circuit conductors and conduits; To size protective circuit breaker and fuses; and To accomplish thermal design for two electrical heat tracing segments: One at C-106 tank riser 7 (CCTV) and one at the exhaust hatchway (condensate drain). Contents include: C-Farm electrical heat tracing; Cable ampacity, lighting, conduit fill and voltage drop; and Control circuit sizing and voltage drop analysis for the seismic shutdown system.

Bailey, J.W.

1998-08-07T23:59:59.000Z

268

Project W-320, 241-C-106 sluicing electrical calculations, Volume 1  

SciTech Connect (OSTI)

This supporting document has been prepared to make the FDNW calculations for Project W-320, readily retrievable.

Bailey, J.W.

1998-08-07T23:59:59.000Z

269

Project management plan for Project W-320, Tank 241-C-106 sluicing  

SciTech Connect (OSTI)

This Project Management Plan establishes the organization, plans, and systems for management of Project W-320 as defined in DOE Order 4700.1, Project Management System (DOE 1987).

Phillips, D.R.

1994-12-01T23:59:59.000Z

270

Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors  

SciTech Connect (OSTI)

A physics based model of the gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors is demonstrated. The model is based on the space charge limited current flow dominated by the effects of deep traps in the InAlN surface layer. The model predicts accurately the gate-leakage measurement data of the N-polar InAlN/GaN device with InAlN cap layer. In the pinch-off state, the gate leakage current conduction through the surface of the device in the drain access region dominates the current flow through the two dimensional electron gas channel. One deep trap level and two levels of shallow traps are extracted by fitting the model results with measurement data.

Goswami, Arunesh; Trew, Robert J.; Bilbro, Griff L. [ECE Department, Box 7911, North Carolina State University, Raleigh, North Carolina 27695-7911 (United States)

2014-10-28T23:59:59.000Z

271

Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors  

SciTech Connect (OSTI)

Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

Han, Jaeheon [Department of Electronic Engineering, Kangnam University, 111 Gugal-dong, Giheung-gu, Yongin-city, Gyeonggi-do, Korea 446-702 (Korea, Republic of)

2011-12-23T23:59:59.000Z

272

Gate Access  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsor Brazilianmaterials

273

Gate Access  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor'sshort version) Thelong version)short

274

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors  

SciTech Connect (OSTI)

Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2?nm from the interface Si/SiO{sub 2} and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

Pud, S.; Li, J.; Offenhusser, A.; Vitusevich, S. A., E-mail: s.vitusevich@fz-juelich.de [Peter Grnberg Institute (PGI-8), Forschungszentrum Jlich, 52425 Jlich (Germany); Gasparyan, F. [Peter Grnberg Institute (PGI-8), Forschungszentrum Jlich, 52425 Jlich (Germany); Department of Semiconductor Physics and Microelectronics, Yerevan State University, 1 Alex Manoogian St., 0025 Yerevan (Armenia); Petrychuk, M. [Radiophysics Faculty, T. Shevchenko National University of Kyiv, 60 Volodymyrska St., 01601 Kyiv (Ukraine)

2014-06-21T23:59:59.000Z

275

Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si  

SciTech Connect (OSTI)

When metal electrodes are deposited on a high-{kappa} metal-oxide/SiO{sub 2}/Si stack, chemical interactions may occur both at the metal/high-{kappa} and the high-{kappa}/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO{sub 2}/SiO{sub 2}/Si stacks causes reduction of the SiO{sub 2} interfacial layer and (to a lesser extent) the HfO{sub 2} layer. Silicon atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for titanium-silicon interdiffusion through the high-{kappa} film in the presence of a titanium gate in crystalline HfO{sub 2} films is also reported.

Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny [Departments of Physics and Chemistry, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854 (United States); Lysaght, Pat S.; Bersuker, Gennadi I. [Sematech, Austin, Texas 78741 (United States)

2007-09-26T23:59:59.000Z

276

Characterization of a gated fiber-optic-coupled detector for application in clinical electron beam dosimetry  

SciTech Connect (OSTI)

Purpose: Assessment of the fundamental dosimetric characteristics of a novel gated fiber-optic-coupled dosimetry system for clinical electron beam irradiation. Methods: The response of fiber-optic-coupled dosimetry system to clinical electron beam, with nominal energy range of 6-20 MeV, was evaluated for reproducibility, linearity, and output dependence on dose rate, dose per pulse, energy, and field size. The validity of the detector system's response was assessed in correspondence with a reference ionization chamber. Results: The fiber-optic-coupled dosimetry system showed little dependence to dose rate variations (coefficient of variation {+-}0.37%) and dose per pulse changes (with 0.54% of reference chamber measurements). The reproducibility of the system was {+-}0.55% for dose fractions of {approx}100 cGy. Energy dependence was within {+-}1.67% relative to the reference ionization chamber for the 6-20 MeV nominal electron beam energy range. The system exhibited excellent linear response (R{sup 2}=1.000) compared to reference ionization chamber in the dose range of 1-1000 cGy. The output factors were within {+-}0.54% of the corresponding reference ionization chamber measurements. Conclusions: The dosimetric properties of the gated fiber-optic-coupled dosimetry system compare favorably to the corresponding reference ionization chamber measurements and show considerable potential for applications in clinical electron beam radiotherapy.

Tanyi, James A.; Nitzling, Kevin D.; Lodwick, Camille J.; Huston, Alan L.; Justus, Brian L. [Department of Radiation Medicine, Oregon Health and Science University, Portland, Oregon 97239 (United States) and Department of Nuclear Engineering and Radiation Health Physics, Oregon State University, Corvallis, Oregon 97331 (United States); Department of Nuclear Engineering and Radiation Health Physics, Oregon State University, Corvallis, Oregon 97331 (United States); Optical Sciences Division, Naval Research Laboratory, Washington, DC 20375 (United States)

2011-02-15T23:59:59.000Z

277

Nucleotide-induced conformational motions and transmembrane gating dynamics in a bacterial ABC transporter  

E-Print Network [OSTI]

ATP-binding cassette (ABC) transporters are integral membrane proteins that mediate the exchange of diverse substrates across membranes powered by ATP hydrolysis. We report results of coarse-grained dynamical simulations performed for the bacterial heme transporter HmuUV. Based on the nucleotide-free structure, we have constructed a ligand-elastic-network description for this protein and investigated ATP-induced conformational motions in structurally resolved computer experiments. As we found, interactions with nucleotides resulted in generic motions which are functional and robust. Upon binding of ATP-mimicking ligands the structure changed from a conformation in which the nucleotide-binding domains formed an open shape, to a conformation in which they were found in tight contact and the transmembrane domains were rotated. The heme channel was broadened in the ligand-bound complex and the gate to the cytoplasm, which was closed in the nucleotide-free conformation, was rendered open by a mechanism that involved tilting motions of essential transmembrane helices. Based on our findings we propose that the HmuUV transporter behaves like a `simple' mechanical device in which, induced by binding of ATP ligands, linear motions of the nucleotide-binding domains are translated into rotational motions and internal tilting dynamics of the transmembrane domains that control gating inside the heme pathway.

Holger Flechsig

2014-02-07T23:59:59.000Z

278

Conductance modulation in topological insulator Bi{sub 2}Se{sub 3} thin films with ionic liquid gating  

SciTech Connect (OSTI)

A Bi{sub 2}Se{sub 3} topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

Son, Jaesung; Banerjee, Karan; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)] [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Brahlek, Matthew; Koirala, Nikesh; Oh, Seongshik [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854 (United States)] [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854 (United States); Lee, Seoung-Ki [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of) [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Ahn, Jong-Hyun [School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)] [School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

2013-11-18T23:59:59.000Z

279

P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology  

E-Print Network [OSTI]

is obtained. P-type and N-type vertical TFTs have shown symmetric electrical characteristics. DifferentP-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low) ABSTRACT P-type and N-type multi-gate vertical thin film transistors (vertical TFTs) have been fabricated

Boyer, Edmond

280

In Proceedings of the 8th IEEE International Conference on Tools with Artificial Intelligence, Toulouse, France, 1996. GATE: An Environment to Support Research and Development  

E-Print Network [OSTI]

describe a software environment to support research and development in natural language (NL) engineering, Toulouse, France, 1996. GATE: An Environment to Support Research and Development in Natural Language. This environment ­ GATE (General Architecture for Text Engineering) ­ aims to advance research in the area

Gaizauskas, Rob

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

In Proceedings of the 8th IEEE International Conference on Tools with Artificial Intelligence, Toulouse, France, 1996. GATE: An Environment to Support Research and Development  

E-Print Network [OSTI]

describe a software environment to support research and development in natural language (NL) engineering, Toulouse, France, 1996. GATE: An Environment to Support Research and Development in Natural Language. This environment -- GATE (General Architecture for Text Engineering) -- aims to advance research in the area

Gaizauskas, Rob

282

Update and Expansion of the Center of Automotive Technology Excellence Under the Graduate Automotive Technology Education (GATE) Program at the University of Tennessee, Knoxville  

SciTech Connect (OSTI)

The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its seventh year of operation under this agreement, its thirteenth year in total. During this period the Center has involved eleven GATE Fellows and three GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the centers focus area: Advanced Hybrid Propulsion and Control Systems. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $2,000,000.

Irick, David

2012-08-30T23:59:59.000Z

283

Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate insulator  

E-Print Network [OSTI]

Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate seeking desirable semi- conductor/insulator combinations [3]. In this study, we adopted an epoxy resin fabricated and characterized. SU-8, a reliable epoxy-based pho- toresist, is tested as a potential highly

Boyer, Edmond

284

Voltage-and calcium-dependent gating of TMEM16A/Ano1 chloride channels are physically  

E-Print Network [OSTI]

Voltage- and calcium-dependent gating of TMEM16A/Ano1 chloride channels are physically coupled by the first intracellular loop Qinghuan Xiaoa , Kuai Yua , Patricia Perez-Cornejob , Yuanyuan Cuia , Jorge in the first intracellular loop that is crucial for both Ca2+ and voltage sensing. Deleting 448EAVK

285

IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 183 Externally Assembled Gate-All-Around Carbon  

E-Print Network [OSTI]

-All-Around Carbon Nanotube Field-Effect Transistor Zhihong Chen, Member, IEEE, Damon Farmer, Sheng Xu, Roy Gordon USA (e-mail: zchen@us.ibm.com; avouris@ us.ibm.com). D. Farmer is with the School of Engineering demonstrate a gate-all-around single- wall carbon nanotube field-effect transistor. This is the first suc

286

Graduate Automotive Technology Education (GATE) Program: Center of Automotive Technology Excellence in Advanced Hybrid Vehicle Technology at West Virginia University  

SciTech Connect (OSTI)

This report summarizes the technical and educational achievements of the Graduate Automotive Technology Education (GATE) Center at West Virginia University (WVU), which was created to emphasize Advanced Hybrid Vehicle Technology. The Center has supported the graduate studies of 17 students in the Department of Mechanical and Aerospace Engineering and the Lane Department of Computer Science and Electrical Engineering. These students have addressed topics such as hybrid modeling, construction of a hybrid sport utility vehicle (in conjunction with the FutureTruck program), a MEMS-based sensor, on-board data acquisition for hybrid design optimization, linear engine design and engine emissions. Courses have been developed in Hybrid Vehicle Design, Mobile Source Powerplants, Advanced Vehicle Propulsion, Power Electronics for Automotive Applications and Sensors for Automotive Applications, and have been responsible for 396 hours of graduate student coursework. The GATE program also enhanced the WVU participation in the U.S. Department of Energy Student Design Competitions, in particular FutureTruck and Challenge X. The GATE support for hybrid vehicle technology enhanced understanding of hybrid vehicle design and testing at WVU and encouraged the development of a research agenda in heavy-duty hybrid vehicles. As a result, WVU has now completed three programs in hybrid transit bus emissions characterization, and WVU faculty are leading the Transportation Research Board effort to define life cycle costs for hybrid transit buses. Research and enrollment records show that approximately 100 graduate students have benefited substantially from the hybrid vehicle GATE program at WVU.

Nigle N. Clark

2006-12-31T23:59:59.000Z

287

Test Set Reordering Using the Gate Exhaustive Test Metric Kyoung Youn Cho and Edward J. McCluskey  

E-Print Network [OSTI]

Test Set Reordering Using the Gate Exhaustive Test Metric Kyoung Youn Cho and Edward J. Mc kycho@crc.stanford.edu Abstract When a test set size is larger than desired, some patterns must be dropped. This paper presents a systematic method to reduce test set size; the method reorders a test set

Stanford University

288

IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 27, NO. 9, SEPTEMBER 2012 4153 C Universal Gate Driver Integrated Circuit  

E-Print Network [OSTI]

IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 27, NO. 9, SEPTEMBER 2012 4153 A 200 C Universal Gate in extreme environment applica- tions, including automotive, aerospace, geothermal, nuclear, and well logging. For successful realization of such high-temperature power conversion modules, the associated control electronics

Tolbert, Leon M.

289

The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study  

E-Print Network [OSTI]

The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh conditions that elucidate the role of oxygen in the functioning of silicon carbide field-effect gas sensors hydrogen-depleted state; competition between hydrogen oxidation and hydrogen diffusion to metal/ oxide

Tobin, Roger G.

290

Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause severe lifetime degradation in  

E-Print Network [OSTI]

Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause mechanisms are bias temperature instability (BTI) [1] and hot-carrier injection (HCI) [2], both of which can is compounded by thermal feedback, since active devices located at die hot spots operate at an elevated

Lipasti, Mikko H.

291

International Conference on Internet Computing. Las Vegas, Nevada, p. 620 626. 23 26 June MONSTERS AT THE GATE  

E-Print Network [OSTI]

, (2) Web agents are searching for a wide variety of information, with 60% of the terms used being: terms exactly as entered by the given user. Data Analysis With these three fields, we located initial June 2003. MONSTERS AT THE GATE: WHEN SOFTBOTS VISIT WEB SEARCH ENGINES Bernard J. Jansen and Amanda S

Jansen, James

292

210 nature neuroscience volume 5 no 3 march 2002 Calcium entry into cells through voltage-gated Ca2+ channels  

E-Print Network [OSTI]

voltage-gated Ca2+ channels initiates a wide range of cellular processes including protein phosphorylation, gene expression and neurotransmitter release1. Neuronal Ca2+ channels consist of a pore-forming 1 by neurotransmitters inhibits Cav2.1 and Cav2.2 channels, which mediate P/Q-type and N- type Ca2+ currents

Palczewski, Krzysztof

293

Design of a scanning gate microscope for mesoscopic electron systems in a cryogen-free dilution refrigerator  

E-Print Network [OSTI]

for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park report on our design of a scanning gate microscope housed in a cryogen-free dilution refrigera- tor for improved energy resolution for spec- troscopic measurements, as well as for investigating physical effects

Goldhaber-Gordon, David

294

250 IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS, VOL. 4, NO. 4, AUGUST 2010 Digital Microfluidic Logic Gates and Their  

E-Print Network [OSTI]

Microfluidic Logic Gates and Their Application to Built-in Self-Test of Lab-on-Chip Yang Zhao, Student Member for microfluidic lab-on-chip. Robust testing methods are therefore needed to ensure correct results. Previously prone. We present a built-in self-test (BIST) method for digital microfluidic lab-on-chip. This method

Chakrabarty, Krishnendu

295

Built-in Self-Test and Fault Diagnosis for Lab-on-Chip Using Digital Microfluidic Logic Gates  

E-Print Network [OSTI]

Built-in Self-Test and Fault Diagnosis for Lab-on-Chip Using Digital Microfluidic Logic Gates Yang University, Durham, NC 27708, USA Abstract Dependability is an important system attribute for microfluidic are cumbersome and error-prone. We present a built-in self-test (BIST) method for digital microfluidic lab

Chakrabarty, Krishnendu

296

ANALOG-DECODER EXPERIMENTS WITH SUBTHRESHOLD CMOS SOFT-GATES Matthias Frey, Hans-Andrea Loeliger, Felix Lustenberger  

E-Print Network [OSTI]

in a low-cost semi-custom 0.8 µm technology. These soft-gates allow, in particular, the real- ization given in [6] and [7, 8]; see also [9]. Since 1998, much effort has been spent towards turning BiCMOS technology. Winstead et al. [11] have fabricated a decoder of the (8,4,4) Hamming code in 0

Loeliger, Hans-Andrea

297

Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature  

SciTech Connect (OSTI)

Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al{sub 2}O{sub 3} gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?C.

Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

2014-10-21T23:59:59.000Z

298

Assesment of Riverbed Change Due to the Operation of a Series of Gates in a Natural River  

E-Print Network [OSTI]

the Mesh .............................................................. 87 Figure 63 Study Area in 2-D Model ......................................................................... 88 viii Figure 64 Comparison of Cross Sections between 1-D... Characteristics from Estuary to Bakje Weir ........................... 123 Figure 88 Temporal Comparison of Hydraulic Characteristics ............................... 125 Figure 89 Mass Change from Sejong Weir to Daechung Dam by Gate Operation . 129...

Kim, Zooho

2013-03-13T23:59:59.000Z

299

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability  

E-Print Network [OSTI]

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability N 2007; published online 17 January 2008 This work investigates the role of hydrogen and nitrogen in a Ge. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from

Misra, Durgamadhab "Durga"

300

Short range, ultra-wideband radar with high resolution swept range gate  

DOE Patents [OSTI]

A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control.

McEwan, Thomas E. (Livermore, CA)

1998-05-26T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

A New Gated X-Ray Detector for the Orion Laser Facility  

SciTech Connect (OSTI)

Gated X-Ray Detectors (GXD) are considered the work-horse target diagnostic of the laser based inertial confinement fusion (ICF) program. Recently, Los Alamos National Laboratory (LANL) has constructed three new GXDs for the Orion laser facility at the Atomic Weapons Establishment (AWE) in the United Kingdom. What sets these three new instruments apart from the what has previously been constructed for the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) is: improvements in detector head microwave transmission lines, solid state embedded hard drive and updated control software, and lighter air box design and other incremental mechanical improvements. In this paper we will present the latest GXD design enhancements and sample calibration data taken on the Trident laser facility at Los Alamos National Laboratory using the newly constructed instruments.

Clark, David D. [Los Alamos National Laboratory; Aragonez, Robert J. [Los Alamos National Laboratory; Archuleta, Thomas N. [Los Alamos National Laboratory; Fatherley, Valerie E. [Los Alamos National Laboratory; Hsu, Albert H. [Los Alamos National Laboratory; Jorgenson, H. J. [Los Alamos National Laboratory; Mares, Danielle [Los Alamos National Laboratory; Oertel, John A. [Los Alamos National Laboratory; Oades, Kevin [Atomic Weapons Establishment; Kemshall, Paul [Atomic Weapons Establishment; Thomas, Philip [Atomic Weapons Establishment; Young, Trevor [Atomic Weapons Establishment; Pederson, Neal [VI Control Systems

2012-08-08T23:59:59.000Z

302

A digital optical phase-locked loop for diode lasers based on field programmable gate array  

SciTech Connect (OSTI)

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad{sup 2} and transition time of 100 {mu}s under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

Xu Zhouxiang; Zhang Xian; Huang Kaikai; Lu Xuanhui [Physics Department, Zhejiang University, Hangzhou, 310027 (China)

2012-09-15T23:59:59.000Z

303

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics  

SciTech Connect (OSTI)

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2?V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure?gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

Sangwan, Vinod K.; Jariwala, Deep; McMorrow, Julian J.; He, Jianting; Lauhon, Lincoln J. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Everaerts, Ken [Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Grayson, Matthew [Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States); Marks, Tobin J., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu; Hersam, Mark C., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

2014-02-24T23:59:59.000Z

304

Nucleotide-induced conformational motions and transmembrane gating dynamics in a bacterial ABC transporter  

E-Print Network [OSTI]

ATP-binding cassette (ABC) transporters are integral membrane proteins that mediate the exchange of diverse substrates across membranes powered by ATP hydrolysis. We report results of coarse-grained dynamical simulations performed for the bacterial heme transporter HmuUV. Based on the nucleotide-free structure, we have constructed a ligand-elastic-network description for this protein and investigated ATP-induced conformational motions in structurally resolved computer experiments. As we found, interactions with nucleotides resulted in generic motions which are functional and robust. Upon binding of ATP-mimicking ligands the structure changed from a conformation in which the nucleotide-binding domains formed an open shape, to a conformation in which they were found in tight contact and the transmembrane domains were rotated. The heme channel was broadened in the ligand-bound complex and the gate to the cytoplasm, which was closed in the nucleotide-free conformation, was rendered open by a mechanism that involv...

Flechsig, Holger

2014-01-01T23:59:59.000Z

305

Molecular doping for control of gate bias stress in organic thin film transistors  

SciTech Connect (OSTI)

The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

Hein, Moritz P., E-mail: hein@iapp.de; Lssem, Bjrn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K. [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany)] [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany); Zakhidov, Alexander A. [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)] [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany); Leo, Karl [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany) [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany); Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)

2014-01-06T23:59:59.000Z

306

Ultrafast control of nuclear spins using only microwave pulses: towards switchable solid-state quantum gates  

E-Print Network [OSTI]

We demonstrate the control of the alpha-proton nuclear spin, I=1/2, coupled to the stable radical CH(COOH)2, S=1/2, in a gamma-irradiated malonic acid single crystal using only microwave pulses. We show that, depending on the state of the electron spin mS=+/-1/2, the nuclear spin can be locked in a desired state or oscillate between mI=+1/2 and mI=-1/2 on the nanosecond time scale. This approach provides a fast and efficient way of controlling nuclear spin qubits and also enables the design of switchable spin-based quantum gates by addressing only the electron spin.

George Mitrikas; Yiannis Sanakis; Georgios Papavassiliou

2009-10-13T23:59:59.000Z

307

Calibration of a gated flat field spectrometer as a function of x-ray intensity  

SciTech Connect (OSTI)

We present an experimental determination of the response of a gated flat-field spectrometer at the Shenguang-II laser facility. X-rays were emitted from a target that was heated by laser beams and then were divided into different intensities with a step aluminum filter and collected by a spectrometer. The transmission of the filter was calibrated using the Beijing Synchrotron Radiation Facility. The response characteristics of the spectrometer were determined by comparing the counts recorded by the spectrometer with the relative intensities of the x-rays transmitted through the step aluminum filter. The response characteristics were used to correct the transmission from two shots of an opacity experiment using the same samples. The transmissions from the two shots are consistent with corrections, but discrepant without corrections.

Xiong, Gang; Yang, Guohong; Li, Hang; Zhang, Jiyan, E-mail: zhangjiyanzjy@sina.com; Zhao, Yang; Hu, Zhimin; Wei, Minxi; Qing, Bo; Yang, Jiamin; Liu, Shenye; Jiang, Shaoen [Research Center of Laser Fusion, China Academy of Engineering Physics, P. O. Box 919-986, Mianyang 621900 (China)] [Research Center of Laser Fusion, China Academy of Engineering Physics, P. O. Box 919-986, Mianyang 621900 (China)

2014-04-15T23:59:59.000Z

308

A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel  

E-Print Network [OSTI]

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.

Hiroshi M. Yamamoto; Masaki Nakano; Masayuki Suda; Yoshihiro Iwasa; Masashi Kawasaki; Reizo Kato

2013-09-02T23:59:59.000Z

309

Short range, ultra-wideband radar with high resolution swept range gate  

DOE Patents [OSTI]

A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. 14 figs.

McEwan, T.E.

1998-05-26T23:59:59.000Z

310

Radiation-damage phenomena in insulated-gate field-effect transistors  

SciTech Connect (OSTI)

This study reports on investigation of the electrical influences of ionizing radiation on the characteristics of Insulated Gate Field Effect Transistors. It includes two major parts, i.e., (A) The electrical effects of device characteristics of the defect generated by silicon or oxygen ion implantation has been examined in detail. Surprisingly, large quantities of neutral electron traps (NET) are generated, and only small quantities of fixed positive charge (FPC) is observed. These studies also raise the issue of the correlation between E{sub {gamma}}{prime} centers and FPC. A similar correlation can be made between E{sub {gamma}}{prime} centers and NET since processes that annihilate FPC tend to create fixed negative charge (FNC) from NET, and processes that would tend to generate FPC would tend to create NET from FNC. It was found that silicon or oxygen implanted gate insulators are more susceptible to X-ray radiation than unimplanted devices and that insulator damage due to silicon or oxygen ion implantation is essentially unannealable. (B) A new electron trapping model has been proposed to model experimental data better than is accomplished by existing first-order trapping kinetic approaches. This model includes a continuous decrease of the trapping cross section, {sigma}{sub 0}, as a function of the number of filled traps, N{sub D}. The dependency of {sigma}{sub 0} is believed to be related physically to the annihilation, or buildup of coulombic charge, which repulsive effect has heretofore been neglected in first-order trapping kinetics that describe the entire defect concentration range. It was found that an injection current density dependency of electron trapping at constant total injected charge occurs only when NETs are being filled.

Sune, Chingtzong.

1990-01-01T23:59:59.000Z

311

Fast and reliable automated ventriculography for gated blood-pool studies  

SciTech Connect (OSTI)

A set of algorithms, requiring only one single operator-interaction and minimal running time, has been generated to analyze left-ventricular function from cardiac gated Tc-99m Blood-pool Nuclear Medicine scintigrams (CBPS). The process depends mainly on an optimal edge enhancement filter derived in the frequency domain and applied to the study via FFT. The bandpass filter is based on Prolate Spheroidal wave functions and was described by Shanmugam et al in 1979. It maximizes output in the vicinity of edges, and is adapted here to enhance the ventricular region of interest (ROI) yielding images with sharp edges and good signal-to-noise ratio (SNR). This procedure does not require previous background subtraction from initial images in order to adequately define left-ventricular contours. A filter format has been chosen which will allow successful performance of the technique over a wide range of CBPS. The filtered image is then scanned and, on the original frame edges around ROI are marked and counts within ROI are defined. It will automatically run for any allowed number or size of frames. Processing time averages less than one minute when employing an Array Processor for a set of 32 64x64 pixel frames. Nuclear Medicine image processing applications of such filter have not been reported to date. This process has been tested on variable rate, variable ejection fraction, known volume Vanderbilt cardiac phantom; with maximum deviation of 3.5% and estimated standard deviation (SD) of 1.7%. When compared to other processes currently available, this technique is clearly more reliable due to its accuracy, speed and simplicity. It has also been used to determine ventricular volumes from gated SPECT images, with a respectable SD of 2.8%.

Lima, M.G.

1984-01-01T23:59:59.000Z

312

Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming  

SciTech Connect (OSTI)

To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2009-11-15T23:59:59.000Z

313

Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation  

SciTech Connect (OSTI)

Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

Yamashita, Y. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Yoshikawa, H.; Kobayashi, K. [National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Chikyo, T. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-01-28T23:59:59.000Z

314

High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor  

SciTech Connect (OSTI)

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

Ono, S., E-mail: shimpei@criepi.denken.or.jp [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Husermann, R. [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan) [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland); Chiba, D. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan) [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 322-0012 (Japan); Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan); Shimamura, K.; Ono, T. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)] [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Batlogg, B. [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)] [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)

2014-01-06T23:59:59.000Z

315

Comparison Of Intake Gate Closure Methods At Lower Granite, Little Goose, Lower Monumental, And Mcnary Dams Using Risk-Based Analysis  

SciTech Connect (OSTI)

The objective of this report is to compare the benefits and costs of modifications proposed for intake gate closure systems at four hydroelectric stations on the Lower Snake and Upper Columbia Rivers in the Walla Walla District that are unable to meet the COE 10-minute closure rule due to the installation of fish screens. The primary benefit of the proposed modifications is to reduce the risk of damage to the station and environs when emergency intake gate closure is required. Consequently, this report presents the results and methodology of an extensive risk analysis performed to assess the reliability of powerhouse systems and the costs and timing of potential damages resulting from events requiring emergency intake gate closure. As part of this analysis, the level of protection provided by the nitrogen emergency closure system was also evaluated. The nitrogen system was the basis for the original recommendation to partially disable the intake gate systems. The risk analysis quantifies this protection level.

Gore, Bryan F.; Blackburn, Tyrone R.; Heasler, Patrick G.; Mara, Neil L.; Phan, Hahn K.; Bardy, David M.; Hollenbeck, Robert E.

2001-01-19T23:59:59.000Z

316

Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit  

Broader source: Energy.gov [DOE]

Presentation given by University of Alabama at Birmingham at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE...

317

Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit  

Broader source: Energy.gov [DOE]

Presentation given by University of Alabama at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center of...

318

Interfacial Layer Growth Condition Dependent Carrier Transport Mechanisms in HfO2/SiO2 Gate Stacks  

SciTech Connect (OSTI)

The temperature and field dependent leakage current in HfO{sub 2}/SiO{sub 2} gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 C to 105 C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level ({phi}{sub t}) and activation energy (E{sub a}) increase for chemically grown IL devices. The trap level energy, ({phi}{sub t}) -0.2 eV, indicates that doubly charged oxygen vacancies (V{sup 2-}) are the active electron traps which contribute to the leakage current in these gate stacks.

Sahoo, S. K.; Misra, D.

2012-06-04T23:59:59.000Z

319

Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition  

SciTech Connect (OSTI)

We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and a top gate contact. The ZnO active channel and thin high-? HfO{sub 2} dielectric utilized are both grown by atomic layer deposition at temperatures less than 130?C, and their material and electronic properties are characterized. These SGTFTs demonstrate enhancement-mode operation with a threshold voltage of 0.91?V, electron mobility of 3.9 cm{sup 2} V{sup ?1} s{sup ?1}, and low subthreshold swing of 192?mV/decade. The devices also exhibit a unique combination of high breakdown voltages (>20?V) with low output conductances.

Ma, Alex M.; Gupta, Manisha; Shoute, Gem; Tsui, Ying Y.; Barlage, Douglas W., E-mail: barlage@ualberta.ca [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada); Afshar, Amir; Cadien, Kenneth C. [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)] [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)

2013-12-16T23:59:59.000Z

320

Enhancing controllability and stability of bottom-gated graphene thin-film transistors by passivation with methylamine  

SciTech Connect (OSTI)

This paper is intended to aid to bridge the gap between chemistry and electronic engineering. In this work, the fabrication of chemical vapour deposited graphene field-effect transistors employing silicon-nitride (Si{sub 3}N{sub 4}) gate dielectric is presented, showing originally p-type channel conduction due to ambient impurities yielding uncontrollable behaviour. Vacuum annealing has been performed to balance off hole and electron conduction in the channel, leading to the observation of the Dirac point and therefore improving controllability. Non-covalent functionalisation by methylamine has been performed for passivation and stability reasons yielding electron mobility of 4800?cm{sup 2}/V?s and hole mobility of 3800?cm{sup 2}/V?s as well as stabilised controllable behaviour of a bottom-gated transistor. The introduction of interface charge following the non-covalent functionalisation as well as the charge balance have been discussed and analysed.

Drapeko, Maksim, E-mail: maksim.drapeko.10@ucl.ac.uk, E-mail: md584@cam.ac.uk [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, WC1H 0AH London, United Kingdom and Centre for Advanced Photonics and Electronics, Department of Engineering, Cambridge University, 9 J J Thomson Avenue, CB3 0HE Cambridge (United Kingdom)

2014-06-02T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Dilation x-ray imager a new/faster gated x-ray imager for the NIF  

SciTech Connect (OSTI)

As the yield on implosion shots increases it is expected that the peak x-ray emission reduces to a duration with a FWHM as short as 20 ps for {approx}7 Multiplication-Sign 10{sup 18} neutron yield. However, the temporal resolution of currently used gated x-ray imagers on the NIF is 40-100 ps. We discuss the benefits of the higher temporal resolution for the NIF and present performance measurements for dilation x-ray imager, which utilizes pulse-dilation technology [T. J. Hilsabeck et al., Rev. Sci. Instrum. 81, 10E317 (2010)] to achieve x-ray imaging with temporal gate times below 10 ps. The measurements were conducted using the COMET laser, which is part of the Jupiter Laser Facility at the Lawrence Livermore National Laboratory.

Nagel, S. R.; Bell, P. M.; Bradley, D. K.; Ayers, M. J.; Barrios, M. A.; Felker, B.; Smith, R. F.; Collins, G. W.; Jones, O. S.; Piston, K.; Raman, K. S. [Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550 (United States); Hilsabeck, T. J.; Kilkenny, J. D.; Chung, T.; Sammuli, B. [General Atomics, P.O. Box 85608, San Diego, California 92186-5608 (United States); Hares, J. D.; Dymoke-Bradshaw, A. K. L. [Kentech Instruments Ltd., Wallingford, Oxfordshire OX10 (United Kingdom)

2012-10-15T23:59:59.000Z

322

Daily targeting of liver tumors: Screening patients with a mock treatment and using a combination of internal and external fiducials for image-guided respiratory-gated radiotherapy  

SciTech Connect (OSTI)

The feasibility and accuracy of using a mock treatment to screen suitable patients for respiratory-gated image-guided radiotherapy was investigated. Radio-opaque fiducials implanted adjacent to the liver tumor were used for online positioning to minimize the systematic error in patient positioning. The consistency in the degree of correlation between the external and internal fiducials was analyzed during a mock treatment. This technique could screen patients for gated therapy, reduce setup inaccuracy, and possibly individualize treatment margins.

Krishnan, Sunil; Briere, Tina Marie; Dong Lei; Murthy, Ravi; Ng, Chaan; Balter, Peter; Mohan, Radhe; Gillin, Michael T.; Beddar, A. Sam [Department of Radiation Oncology, MD Anderson Cancer Center, Houston, Texas 77030 (United States); Department of Radiation Physics, MD Anderson Cancer Center, Houston, Texas 77030 (United States); Department of Diagnostic Radiology, MD Anderson Cancer Center, Houston, Texas 77030 (United States); Department of Radiation Physics, MD Anderson Cancer Center, Houston, Texas 77030 (United States)

2007-12-15T23:59:59.000Z

323

Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray  

E-Print Network [OSTI]

Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means (HXPS, HAXPES) is applied to a thick (100 A ) film of a metal gate TiN grown on top of a Si/MoSi2 of TiN, as well as the buried interface between TiN and the native oxide on top of the mirror

Fadley, Charles

324

Pulsed-gate measurements of the singlet-triplet relaxation time in a two-electron double quantum dot  

E-Print Network [OSTI]

-gate technique with charge sensing is used to measure the singlet-triplet relaxation time for nearly degenerate spin states in a two-electron double quantum dot. Transitions from the 1,1 charge occupancy state. At dilution refrigerator temperatures, this implies that EZeeman kBT 10 eV, or B 0.5 T. For B 0.5 T, T1 shows

Petta, Jason

325

Development of a Microchannel Plate-Based Gated X-ray Imager for Imaging and Spectroscopy Experiments on Z  

SciTech Connect (OSTI)

This poster describes a microchannelplate (MCP)based, gated x-ray imager developed by National Security Technologies, LLC (NSTec), and Sandia National Laboratories(SNL) over the past several years. The camera consists of a 40 mm 40 mm MCP, coated with eight 4 mm wide microstrips. The camera is gated by sending subnanosecond high-voltage pulses across the striplines. We have performed an extensive characterization of the camera, the results of which we present here. The camera has an optical gate profile width (time resolution) as narrow as 150 ps and detector uniformity of better than 30% along the length of a strip, far superior than what was achieved in previous designs. The spatial resolution is on the order of 40 microns for imaging applications and a dynamic range of between ~100 and ~1000. We also present results from a Monte Carlo simulation code developed by NSTec over the last several years. Agreement between the simulation results and the experimental measurements is very good.

Wu, M., Kruschwitz, C. A., Tibbitts, A., Rochau, G.

2011-06-24T23:59:59.000Z

326

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications  

SciTech Connect (OSTI)

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

2014-01-01T23:59:59.000Z

327

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices  

SciTech Connect (OSTI)

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e{sup 2}/h. A fabrication-limited yield of 94% is achieved for the array, and a quantum yield is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

Al-Taie, H., E-mail: ha322@cam.ac.uk; Kelly, M. J. [Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, 9 J. J. Thomson Avenue, University of Cambridge, Cambridge CB3 0FA (United Kingdom) [Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, 9 J. J. Thomson Avenue, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Smith, L. W.; Xu, B.; Griffiths, J. P.; Beere, H. E.; Jones, G. A. C.; Ritchie, D. A.; Smith, C. G. [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)] [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); See, P. [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom)] [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom)

2013-06-17T23:59:59.000Z

328

Droplet minimizers for the Gates-Lebowitz-Penrose free energy functional  

E-Print Network [OSTI]

We study the structure of the constrained minimizers of the Gates-Lebowitz-Penrose free-energy functional ${\\mathcal F}_{\\rm GLP}(m)$, non-local functional of a density field $m(x)$, $x\\in {\\mathcal T}_L$, a $d$-dimensional torus of side length $L$. At low temperatures, ${\\mathcal F}_{\\rm GLP}$ is not convex, and has two distinct global minimizers, corresponding to two equilibrium states. Here we constrain the average density $L^{-d}\\int_{{\\cal T}_L}m(x)\\dd x$ to be a fixed value $n$ between the densities in the two equilibrium states, but close to the low density equilibrium value. In this case, a "droplet" of the high density phase may or may not form in a background of the low density phase, depending on the values $n$ and $L$. We determine the critical density for droplet formation, and the nature of the droplet, as a function of $n$ and $L$. The relation between the free energy and the large deviations functional for a particle model with long-range Kac potentials, proven in some cases, and expected to be true in general, then provides information on the structure of typical microscopic configurations of the Gibbs measure when the range of the Kac potential is large enough.

E. A. Carlen; M. C. Carvalho; R. Esposito; J. L. Lebowitz; R. Marra

2009-05-21T23:59:59.000Z

329

HfO{sub x}N{sub y} gate dielectric on p-GaAs  

SciTech Connect (OSTI)

Plasma nitridation method is used for nitrogen incorporation in HfO{sub 2} based gate dielectrics for future GaAs-based devices. The nitrided HfO{sub 2} (HfO{sub x}N{sub y}) films on p-GaAs improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, hysteresis, and leakage current. An equivalent oxide thickness of 3.6 nm and a leakage current density of 10{sup -6} A cm{sup -2} have been achieved at V{sub FB}-1 V for nitrided HfO{sub 2} films. A nitride interfacial layer (GaAsO:N) was observed at HfO{sub 2}-GaAs interface, which can reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion led to a substantial enhancement in the overall dielectric properties of the HfO{sub 2} film.

Dalapati, G. K.; Sridhara, A.; Wong, A. S. W.; Chia, C. K.; Chi, D. Z. [Institute of Materials Research and Engineering, A-STAR - Agency for Science, Technology and Research, 3 Research Link, Singapore 117602 (Singapore)

2009-02-16T23:59:59.000Z

330

SNM neutron detection using a time-gated synthetic aperture hybrid approach  

SciTech Connect (OSTI)

This work focuses on using forward and adjoint transport in a hybrid application of 3-D deterministic (PENTRAN) and Monte Carlo (MCNP5) codes to model a series of neutron detector blocks. These blocks, or 'channels, ' contain a unique set of moderators with 4 atm He-3 detectors tuned to detect and profile a gross energy spectrum of a passing neutron (SNM) source. Ganging the units together as a large area system enables one to apply time gating the source-detector response to maximize signal to noise responses from a passing source with minimal background; multiple units may be positioned as a collective synthetic aperture detector array to be used as a way of performing real time neutron spectroscopy for detecting special nuclear materials in moving vehicles. The initial design, detector response coupling, confirmation of initial design functionality using adjoint transport calculations, and realistic simulation using PENTRAN and MCNP5 are presented. Future work will include optimization and application to realistic scenarios and additional sources. (authors)

Molinar, M.; Yi, C.; Edgar, C. A.; Manalo, K.; Chin, M.; Sjoden, G. [Nuclear and Radiological Engineering Program, George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 770 State Street, Atlanta GA 30332-0745 (United States)

2013-07-01T23:59:59.000Z

331

Evaluation of soft-core processors on a Xilinx Virtex-5 field programmable gate array.  

SciTech Connect (OSTI)

Node-based architecture (NBA) designs for future satellite projects hold the promise of decreasing system development time and costs, size, weight, and power and positioning the laboratory to address other emerging mission opportunities quickly. Reconfigurable field programmable gate array (FPGA)-based modules will comprise the core of several of the NBA nodes. Microprocessing capabilities will be necessary with varying degrees of mission-specific performance requirements on these nodes. To enable the flexibility of these reconfigurable nodes, it is advantageous to incorporate the microprocessor into the FPGA itself, either as a hard-core processor built into the FPGA or as a soft-core processor built out of FPGA elements. This document describes the evaluation of three reconfigurable FPGA-based soft-core processors for use in future NBA systems: the MicroBlaze (uB), the open-source Leon3, and the licensed Leon3. Two standard performance benchmark applications were developed for each processor. The first, Dhrystone, is a fixed-point operation metric. The second, Whetstone, is a floating-point operation metric. Several trials were run at varying code locations, loop counts, processor speeds, and cache configurations. FPGA resource utilization was recorded for each configuration.

Learn, Mark Walter

2011-04-01T23:59:59.000Z

332

Model for cradle-to-gate life cycle assessment of clinker production  

SciTech Connect (OSTI)

A model for input- and technology-dependent cradle-to-gate life cycle assessments (LCA) was constructed to quantify emissions and resource consumption of various clinker production options. The model was compiled using data of more than 100 clinker production lines and complemented with literature data and best judgment from experts. It can be applied by the cement industry for the selection of alternative fuels and raw materials (AFR) and by authorities for decision-support regarding the permission of waste co-processing in cement kilns. In the field of sustainable construction, the model can be used to compare clinker production options. Two case studies are presented. First, co-processing of four different types of waste is analyzed at a modern precalciner kiln system. Second, clinker production is compared between five kiln systems. Results show that the use of waste (tires, prepared industrial waste, dried sewage sludge, blast furnace slag) led to reduced greenhouse gas emissions, decreased resource consumption, and mostly to reduced aggregated environmental impacts. Regarding the different kiln systems, the environmental impact generally increased with decreasing energy efficiency. 35 refs., 2 figs., 2 tabs.

Michael Elias Boesch; Annette Koehler; Stefanie Hellweg [ETH Zurich, Zurich (Switzerland). Institute of Environmental Engineering

2009-10-01T23:59:59.000Z

333

Response of left ventricular ejection fraction to recovery from general anesthesia: measurement by gated radionuclide angiography  

SciTech Connect (OSTI)

To test the hypothesis that, after anesthesia for noncardiac surgical procedures, the increased cardiac work during recovery induces wall motion and ejection fraction (EF) abnormalities in patients with mild angina pectoris, gated radionuclide angiography was performed in patients undergoing simple cholecystectomy under narcotic-relaxant general anesthesia. The ejection fraction was determined during anesthesia at the end of surgery, and then determined 3 min and 3 hr after extubation. A new angiography was performed 24 hr later, and a myocardial scintigraphy (Thallium 201) was performed during infusion of the coronary vasodilator, dipyridamole. In the first part of the investigation, eight patients without coronary artery disease (CAD) (group 1) and 20 patients with mild angina (group 2) were studied. In the second part of the study, seven patients (group 3) with mild angina pectoris received an intravenous infusion of 0.4 microgram X kg-1 X min-1 of nitroglycerin started before surgery and gradually decreased 4 hr after extubation. In group 1, EF remained unchanged at recovery. In contrast in group 2, EF responded abnormally to recovery: EF decreased from 55% during anesthesia to 45% 3 min after extubation (P less than 0.001). Patients in group 3, who received intravenous nitroglycerin, showed no change of EF at recovery. This study demonstrates that recovery from general anesthesia causes abnormalities in left ventricular function in patients suffering from CAD. These abnormalities are prevented by prophylactic intravenous nitroglycerin.

Coriat, P.; Mundler, O.; Bousseau, D.; Fauchet, M.; Rous, A.C.; Echter, E.; Viars, P.

1986-06-01T23:59:59.000Z

334

New insights into self-heating in double-gate transistors by solving Boltzmann transport equations  

SciTech Connect (OSTI)

Electro-thermal effects become one of the most critical issues for continuing the downscaling of electron devices. To study this problem, a new efficient self-consistent electron-phonon transport model has been developed. Our model of phonon Boltzmann transport equation (pBTE) includes the decay of optical phonons into acoustic modes and a generation term given by electron-Monte Carlo simulation. The solution of pBTE uses an analytic phonon dispersion and the relaxation time approximation for acoustic and optical phonons. This coupled simulation is applied to investigate the self-heating effects in a 20?nm-long double gate MOSFET. The temperature profile per mode and the comparison between Fourier temperature and the effective temperature are discussed. Some significant differences occur mainly in the hot spot region. It is shown that under the influence of self-heating effects, the potential profile is modified and both the drain current and the electron ballisticity are reduced because of enhanced electron-phonon scattering rates.

Thu Trang Nghim, T., E-mail: tthutrang.nghiem@gmail.com [Institute of Fundamental Electronics, UMR 8622, CNRS-University of Paris-Sud, Orsay (France); The Center for Thermal Sciences of Lyon, UMR 5008, CNRSINSAUniversity of Lyon 1, Villeurbanne (France); Saint-Martin, J.; Dollfus, P. [Institute of Fundamental Electronics, UMR 8622, CNRS-University of Paris-Sud, Orsay (France)

2014-08-21T23:59:59.000Z

335

Rio Grande project partnerships  

E-Print Network [OSTI]

for supporting hydrologic analysis and modeling. The information will help develop bi-national cooperation between Mexico and the United States concerning water in the Rio Grande Basin. It will also provide accurate and reli- able data necessary for analysis... municipal demands. With the population expected to double in the next 50 years, the urban water demands will increase proportionately. Story by Danielle Supercinski At the Cameron County Irrigation District No. 2 in San Benito, sluice gates inside...

Supercinski, Danielle

2008-01-01T23:59:59.000Z

336

Evaluating the size-dependent quantum efficiency loss in a SiO{sub 2}-Y{sub 2}O{sub 3} hybrid gated type-II InAs/GaSb long-infrared photodetector array  

SciTech Connect (OSTI)

Growing Y{sub 2}O{sub 3} on 20?nm SiO{sub 2} to passivate a 11??m 50% cut-off wavelength long-wavelength infrared type-II superlattice gated photodetector array reduces its saturated gate bias (V{sub G,sat}) to ?7 V. Size-dependent quantum efficiency (QE) losses are evaluated from 400??m to 57??m size gated photodiode. Evolution of QE of the 57??m gated photodiode with gate bias and diode operation bias reveals different surface recombination mechanisms. At 77?K and V{sub G,sat}, the 57??m gated photodiode exhibits QE enhancement from 53% to 63%, and it has 1.2 10{sup ?5} A/cm{sup 2} dark current density at ?200?mV, and a specific detectivity of 2.3??10{sup 12} Jones.

Chen, G.; Hoang, A. M.; Razeghi, M., E-mail: razeghi@eecs.northwestern.edu [Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)

2014-03-10T23:59:59.000Z

337

Graduate Automotive Technology Education (GATE) Center for Hybrid Electric Drivetrains and Control Strategies  

SciTech Connect (OSTI)

Beginning the fall semester of 1999, The University of Maryland, Departments of Mechanical and Electrical Engineering and the Institute for Systems Research served as a U.S. Department of Energy (USDOE) Graduate Automotive Technology Education (GATE) Center for Hybrid Electric Drivetrains and Control Strategies. A key goal was to produce a graduate level education program that educated and prepared students to address the technical challenges of designing and developing hybrid electric vehicles, as they progressed into the workforce. A second goal was to produce research that fostered the advancement of hybrid electric vehicles, their controls, and other related automotive technologies. Participation ended at the University of Maryland after the 2004 fall semester. Four graduate courses were developed and taught during the course of this time, two of which evolved into annually-taught undergraduate courses, namely Vehicle Dynamics and Control Systems Laboratory. Five faculty members from Mechanical Engineering, Electrical Engineering, and the Institute for Systems Research participated. Four Ph.D. degrees (two directly supported and two indirectly supported) and seven Master's degrees in Mechanical Engineering resulted from the research conducted. Research topics included thermoelectric waste heat recovery, fuel cell modeling, pre- and post-transmission hybrid powertrain control and integration, hybrid transmission design, H{sub 2}-doped combustion, and vehicle dynamics. Many of the participating students accepted positions in the automotive industry or government laboratories involved in automotive technology work after graduation. This report discusses the participating faculty, the courses developed and taught, research conducted, the students directly and indirectly supported, and the publication list. Based on this collection of information, the University of Maryland firmly believes that the key goal of the program was met and that the majority of the participating students are now contributing to the advancement of automotive technology in this country.

David Holloway

2005-09-30T23:59:59.000Z

338

Method and infrastructure for cycle-reproducible simulation on large scale digital circuits on a coordinated set of field-programmable gate arrays (FPGAs)  

DOE Patents [OSTI]

A plurality of target field programmable gate arrays are interconnected in accordance with a connection topology and map portions of a target system. A control module is coupled to the plurality of target field programmable gate arrays. A balanced clock distribution network is configured to distribute a reference clock signal, and a balanced reset distribution network is coupled to the control module and configured to distribute a reset signal to the plurality of target field programmable gate arrays. The control module and the balanced reset distribution network are cooperatively configured to initiate and control a simulation of the target system with the plurality of target field programmable gate arrays. A plurality of local clock control state machines reside in the target field programmable gate arrays. The local clock state machines are configured to generate a set of synchronized free-running and stoppable clocks to maintain cycle-accurate and cycle-reproducible execution of the simulation of the target system. A method is also provided.

Asaad, Sameh W; Bellofatto, Ralph E; Brezzo, Bernard; Haymes, Charles L; Kapur, Mohit; Parker, Benjamin D; Roewer, Thomas; Tierno, Jose A

2014-01-28T23:59:59.000Z

339

The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean  

E-Print Network [OSTI]

Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

Richart B. Cathcart; Alexander A. Bolonkin

2007-02-04T23:59:59.000Z

340

The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean  

E-Print Network [OSTI]

Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

Cathcart, R B; Bolonkin, Alexander A.; Cathcart, Richart B.

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Ballistic Imaging of High-Pressure Fuel Sprays using Incoherent, Ultra- short Pulsed Illumination with an Ultrafast OKE-based Time Gating  

E-Print Network [OSTI]

We present an optical Kerr effect based time-gate with the collinear incidence of the pump and probe beams at the Kerr medium, liquid carbon disulfide, for ballistic imaging of the high-pressure fuel sprays. The probe pulse used to illuminate the object under study is extracted from the supercontinuum generated by tightly focusing intense femtosecond laser pulses inside water, thereby destroying their coherence. The optical imaging spatial resolution and gate timings are investigated and compared with a similar setup without supercontinuum generation, where the probe is still coherent. And finally, a few ballistic images of the fuel sprays using coherent and incoherent illumination with the proposed time-gate are presented and compared qualitatively.

Purwar, Harsh; Roz, Claude; Blaisot, Jean-Bernard

2015-01-01T23:59:59.000Z

342

Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement  

SciTech Connect (OSTI)

Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800??s) the completion of drain-stress voltage (200?V) in the off-state, the second-harmonic (SH) signals appeared within 2??m from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

Katsuno, Takashi, E-mail: e1417@mosk.tytlabs.co.jp; Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu [Toyota Central R and D Laboratories Inc., Nagakute, Aichi 480-1192 (Japan); Manaka, Takaaki; Iwamoto, Mitsumasa [Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552 (Japan)

2014-06-23T23:59:59.000Z

343

Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors  

SciTech Connect (OSTI)

Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

2010-01-01T23:59:59.000Z

344

Variations of the Respiration Signals for Respiratory-Gated Radiotherapy Using the Video Coached Respiration Guiding System  

E-Print Network [OSTI]

Respiratory-gated radiation therapy (RGRT) has been used to minimize the dose to normal tissue in lung-cancer radiotherapy. The present research aims to improve the regularity of respiration in RGRT using a video coached respiration guiding system. In the study, 16 patients with lung cancer were evaluated. The respiration signals of the patients were measured by a real-time position management (RPM) Respiratory Gating System (Varian, USA) and the patients were trained using the video coached respiration guiding system. The patients performed free breathing and guided breathing, and the respiratory cycles were acquired for ~5 min. Then, Microsoft Excel 2010 software was used to calculate the mean and standard deviation for each phase. The standard deviation was computed in order to analyze the improvement in the respiratory regularity with respect to the period and displacement. The standard deviation of the guided breathing decreased to 65.14% in the inhale peak and 71.04% in the exhale peak compared with the...

Lee, Hyun Jeong; Oh, Se An

2015-01-01T23:59:59.000Z

345

A simple template-based transfer method to fabricate BradburyNielsen gates with uniform tension for ion mobility spectrometry  

SciTech Connect (OSTI)

A BradburyNielsen gate (BNG) consists of two interleaved and electrically isolated sets of wires. It is usually used to gate or modulate ion beams. Uniformly tense wires can remain parallel, equidistant, and coplanar over a wide working temperature range, which is critical to reliable BNG performance. Hence, this study analyzes the non-uniform tension of wires wound using traditional sequential winding methods in which the elastic modulus of the metal wire is much larger than that of the insulation substrate. To address this problem, a simple and reliable template-based transfer method is developed. First, a template with large elastic modulus is used to fabricate a wire mesh with uniform tension. The mesh is then transferred to the substrate. Theoretically, this method reduces the non-uniformity of the tension in wires to less than 2%; therefore, it is used to construct a BNG with stainless steel wire, a stainless steel template, and a printed circuit board substrate. The BNG was installed in our homebuilt ion mobility spectrometer. To confirm that the performance of the BNG meets the requirements of portable ion mobility spectrometry, signal intensity and resolution (approximately 30) were experimentally determined.

Kai, Ni, E-mail: ni.kai@sz.tsinghua.edu.cn; Jingran, Guo; Guangli, Ou; Yu, Lei; Quan, Yu; Xiang, Qian; Xiaohao, Wang [Division of Advanced Manufacturing, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China)

2014-08-15T23:59:59.000Z

346

HOT TOPICS: Bridge suicides (http://www.marinij.com/goldengatebridge/ci_25220172/record-number-golden-gate-bridge-suicides-recorded-2013) #MarinDrought (http://www.marinij.com/marinnews/ci_24975029/readers-share-water-saving-ideas-marindroughtt)  

E-Print Network [OSTI]

HOT TOPICS: Bridge suicides (http://www.marinij.com/goldengatebridge/ci_25220172/record-number-golden-gate-bridge://www.marinij.com/goldengatebridge/ci_25217201/golden-gate-bridge-toll-could-increase-by-1) Data center (http://www.marinij.com/data) Traffic://www.marinij.com/marinnews/ci_25202779/marin-robbery-suspect-loses-bid-stop-ij-from) Bridge toll hike (http

California at Berkeley, University of

347

Spatially-resolved EELS and EDS Analysis of HfOxNy Gate Dielectrics Deposited by MOCVD using [(C2H5)2N]4Hf with NO and O2  

E-Print Network [OSTI]

-resolved electron energy loss spectroscopy (EELS) and energy-dispersive spectrometry (EDS). HfOxNy gate dielectrics a replacement for SiO2 as the gate dielectric material. HfO2 is a promising candidate due to its high dielectric constant its stability on Si. However, crystallization temperatures of less than 500 °C and high impurity

Ng, Wai Tung

348

Preprint of M. B. Yairi, C. W. Coldren, D. A. B. Miller, and J. S. Harris, Jr."High-Speed Quantum Well Optoelectronic Gate Based on Diffusive Conduction Recovery," in Optics in Computing '98, Pierre Chavel, David A. B. Miller, Hugo Thienpont,  

E-Print Network [OSTI]

Well Optoelectronic Gate Based on Diffusive Conduction Recovery," in Optics in Computing '98, Pierre-Speed Quantum Well Optoelectronic Gate Based on Diffusive Conduction Recovery M. B. Yairi, C. W. Coldren*, D. A-4085, USA *Solid State Laboratory, Stanford University Abstract A novel high-speed optoelectronic gate

Miller, David A. B.

349

Flammable Gas Release Estimates for Modified Sluicing Retrieval of Waste from Selected Hanford Single-Shell Tanks  

E-Print Network [OSTI]

under Contract DE-AC06-76RL01830 DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor Battelle Memorial Institute, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof, or Battelle Memorial Institute. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.

J. L. Huckaby; B. E. Wells

2004-01-01T23:59:59.000Z

350

Development and Deployment of the Extended Reach Sluicing System (ERSS) for Retrieval of Hanford Single Shell Tank Waste. Draft  

SciTech Connect (OSTI)

A history of the evolution and the design development of Extended Reach Sluicer System (ERSS) is presented. Several challenges are described that had to be overcome to create a machine that went beyond the capabilities of prior generation sluicers to mobilize waste in Single Shell Tanks for pumping into Double Shell Tank receiver tanks. Off-the-shelf technology and traditional hydraulic fluid power systems were combined with the custom-engineered components to create the additional functionality of the ERSS, while still enabling it to fit within very tight entry envelope into the SST. Problems and challenges inevitably were encountered and overcome in ways that enhance the state of the art of fluid power applications in such constrained environments. Future enhancements to the ERSS design are explored for retrieval of tanks with different dimensions and internal obstacles.

Bauer, Roger E. [Washington River Protection Systems, Richland, WA (United States); Figley, Reed R. [Washington River Protection Systems, Richland, WA (United States); Innes, A. G. [Washington River Protection Systems, Richland, WA (United States)

2013-11-11T23:59:59.000Z

351

Thermoelectric properties of electrically gated bismuth telluride nanowires I. Bejenari,1,2,* V. Kantser,2, and A. A. Balandin1,  

E-Print Network [OSTI]

the best known thermoelectric materials for the mod- ern commercial application. These materials possess as compared to bulk bismuth telluride material. For example, the thermoelectric figure of merit ZT of the Bi2Thermoelectric properties of electrically gated bismuth telluride nanowires I. Bejenari,1,2,* V

352

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 11, NOVEMBER 2002 1897 A Computational Study of Thin-Body, Double-Gate,  

E-Print Network [OSTI]

­drain region is made of silicide or metal rather than heavily doped semiconductor [1]­[3]. The device offers.1109/TED.2002.804696 Fig. 1. Thin-body, double-gate SBFET with silicide/metal source and drain. Both-con- sistently with a quantum transport equation. The results show that for SBFETs with positive, effective metal

Guo, Jing

353

Highly specific and sensitive non-enzymatic determination of uric acid in serum and urine by extended gate field effect transistor sensors  

E-Print Network [OSTI]

by extended gate field effect transistor sensors Weihua Guan a,n , Xuexin Duan a , Mark A. Reed a unsuitable to be used for point of care testing. Electrochemical techniques for UA detection have attracted, along with high selectivity and sensitiv- ity (Xue et al., 2011). So far the electrochemical UA

Reed, Mark

354

Anomalous electron transport in back-gated field-effect transistors with TiTe2 semimetal thin-film channels  

E-Print Network [OSTI]

-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated field-effect transistors. [doi:10.1063/1.3679679] Successful mechanical exfoliation of graphene1 and investigation of its unique

355

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 29, NO. 9, SEPTEMBER 2010 1409 Gate-Sizing-Based Single Vdd Test for Bridge  

E-Print Network [OSTI]

complementary metal- oxide-semiconductor and can constitute 50% or more, of total defect count [1]. A bridge, SEPTEMBER 2010 1409 Gate-Sizing-Based Single Vdd Test for Bridge Defects in Multivoltage Designs Saqib design technique. Recent research has shown that testing for resistive bridging faults in such designs

Chakrabarty, Krishnendu

356

All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits J. Renteria,1  

E-Print Network [OSTI]

off, and the single-atom thickness of graphene leaves it susceptible to radiation damage.18 non-linear current-voltage characteristics, unusual optical response, and electrical gating at room radiation-hard all-metallic logic circuits. These results may open new application space for thin films

357

A Comparison of Amplitude-Based and Phase-Based Positron Emission Tomography Gating Algorithms for Segmentation of Internal Target Volumes of Tumors Subject to Respiratory Motion  

SciTech Connect (OSTI)

Purpose: To quantitatively compare the accuracy of tumor volume segmentation in amplitude-based and phase-based respiratory gating algorithms in respiratory-correlated positron emission tomography (PET). Methods and Materials: List-mode fluorodeoxyglucose-PET data was acquired for 10 patients with a total of 12 fluorodeoxyglucose-avid tumors and 9 lymph nodes. Additionally, a phantom experiment was performed in which 4 plastic butyrate spheres with inner diameters ranging from 1 to 4 cm were imaged as they underwent 1-dimensional motion based on 2 measured patient breathing trajectories. PET list-mode data were gated into 8 bins using 2 amplitude-based (equal amplitude bins [A1] and equal counts per bin [A2]) and 2 temporal phase-based gating algorithms. Gated images were segmented using a commercially available gradient-based technique and a fixed 40% threshold of maximum uptake. Internal target volumes (ITVs) were generated by taking the union of all 8 contours per gated image. Segmented phantom ITVs were compared with their respective ground-truth ITVs, defined as the volume subtended by the tumor model positions covering 99% of breathing amplitude. Superior-inferior distances between sphere centroids in the end-inhale and end-exhale phases were also calculated. Results: Tumor ITVs from amplitude-based methods were significantly larger than those from temporal-based techniques (P=.002). For lymph nodes, A2 resulted in ITVs that were significantly larger than either of the temporal-based techniques (P<.0323). A1 produced the largest and most accurate ITVs for spheres with diameters of ?2 cm (P=.002). No significant difference was shown between algorithms in the 1-cm sphere data set. For phantom spheres, amplitude-based methods recovered an average of 9.5% more motion displacement than temporal-based methods under regular breathing conditions and an average of 45.7% more in the presence of baseline drift (P<.001). Conclusions: Target volumes in images generated from amplitude-based gating are larger and more accurate, at levels that are potentially clinically significant, compared with those from temporal phase-based gating.

Jani, Shyam S., E-mail: sjani@mednet.ucla.edu [Department of Radiation Oncology, David Geffen School of Medicine, University of California, Los Angeles, California (United States); Robinson, Clifford G. [Department of Radiation Oncology, Siteman Cancer Center, Washington University in St Louis, St Louis, Missouri (United States); Dahlbom, Magnus [Department of Molecular and Medical Pharmacology, David Geffen School of Medicine, University of California, Los Angeles, California (United States); White, Benjamin M.; Thomas, David H.; Gaudio, Sergio; Low, Daniel A.; Lamb, James M. [Department of Radiation Oncology, David Geffen School of Medicine, University of California, Los Angeles, California (United States)

2013-11-01T23:59:59.000Z

358

A dose point kernel database using GATE Monte Carlo simulation toolkit for nuclear medicine applications: Comparison with other Monte Carlo codes  

SciTech Connect (OSTI)

Purpose: GATE is a Monte Carlo simulation toolkit based on the Geant4 package, widely used for many medical physics applications, including SPECT and PET image simulation and more recently CT image simulation and patient dosimetry. The purpose of the current study was to calculate dose point kernels (DPKs) using GATE, compare them against reference data, and finally produce a complete dataset of the total DPKs for the most commonly used radionuclides in nuclear medicine. Methods: Patient-specific absorbed dose calculations can be carried out using Monte Carlo simulations. The latest version of GATE extends its applications to Radiotherapy and Dosimetry. Comparison of the proposed method for the generation of DPKs was performed for (a) monoenergetic electron sources, with energies ranging from 10 keV to 10 MeV, (b) beta emitting isotopes, e.g., {sup 177}Lu, {sup 90}Y, and {sup 32}P, and (c) gamma emitting isotopes, e.g., {sup 111}In, {sup 131}I, {sup 125}I, and {sup 99m}Tc. Point isotropic sources were simulated at the center of a sphere phantom, and the absorbed dose was stored in concentric spherical shells around the source. Evaluation was performed with already published studies for different Monte Carlo codes namely MCNP, EGS, FLUKA, ETRAN, GEPTS, and PENELOPE. A complete dataset of total DPKs was generated for water (equivalent to soft tissue), bone, and lung. This dataset takes into account all the major components of radiation interactions for the selected isotopes, including the absorbed dose from emitted electrons, photons, and all secondary particles generated from the electromagnetic interactions. Results: GATE comparison provided reliable results in all cases (monoenergetic electrons, beta emitting isotopes, and photon emitting isotopes). The observed differences between GATE and other codes are less than 10% and comparable to the discrepancies observed among other packages. The produced DPKs are in very good agreement with the already published data, which allowed us to produce a unique DPKs dataset using GATE. The dataset contains the total DPKs for {sup 67}Ga, {sup 68}Ga, {sup 90}Y, {sup 99m}Tc, {sup 111}In, {sup 123}I, {sup 124}I, {sup 125}I, {sup 131}I, {sup 153}Sm, {sup 177}Lu {sup 186}Re, and {sup 188}Re generated in water, bone, and lung. Conclusions: In this study, the authors have checked GATE's reliability for absorbed dose calculation when transporting different kind of particles, which indicates its robustness for dosimetry applications. A novel dataset of DPKs is provided, which can be applied in patient-specific dosimetry using analytical point kernel convolution algorithms.

Papadimitroulas, Panagiotis; Loudos, George; Nikiforidis, George C.; Kagadis, George C. [Department of Medical Physics, School of Medicine, University of Patras, Rion, GR 265 04 (Greece) and Department of Medical Instruments Technology, Technological Educational institute of Athens, Ag. Spyridonos Street, Egaleo GR 122 10, Athens (Greece); Department of Medical Instruments Technology, Technological Educational institute of Athens, Ag. Spyridonos Street, Egaleo GR 122 10, Athens (Greece); Department of Medical Physics, School of Medicine, University of Patras, Rion, GR 265 04 (Greece)

2012-08-15T23:59:59.000Z

359

Qualification of a high-efficiency, gated spectrometer for x-ray Thomson scattering on the National Ignition Facility  

SciTech Connect (OSTI)

We have designed, built, and successfully fielded a highly efficient and gated Bragg crystal spectrometer for x-ray Thomson scattering measurements on the National Ignition Facility (NIF). It utilizes a cylindrically curved Highly Oriented Pyrolytic Graphite crystal. Its spectral range of 7.410?keV is optimized for scattering experiments using a Zn He-? x-ray probe at 9.0 keV or Mo K-shell line emission around 18 keV in second diffraction order. The spectrometer has been designed as a diagnostic instrument manipulator-based instrument for the NIF target chamber at the Lawrence Livermore National Laboratory, USA. Here, we report on details of the spectrometer snout, its novel debris shield configuration and an in situ spectral calibration experiment with a Brass foil target, which demonstrated a spectral resolution of E/?E = 220 at 9.8 keV.

Dppner, T.; Kritcher, A. L.; Bachmann, B.; Burns, S.; Hawreliak, J.; House, A.; Landen, O. L.; LePape, S.; Ma, T.; Pak, A.; Swift, D. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Neumayer, P. [Gesellschaft fr Schwerionenphysik, 64291 Darmstadt (Germany); Kraus, D. [University of California, Berkeley, California 94720 (United States); Falcone, R. W. [University of California, Berkeley, California 94720 (United States); Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Glenzer, S. H. [SLAC National Accelerator Laboratory, Menlo Park, California 94309 (United States)

2014-11-15T23:59:59.000Z

360

Evaluation of the Leon3 soft-core processor within a Xilinx radiation-hardened field-programmable gate array.  

SciTech Connect (OSTI)

The purpose of this document is to summarize the work done to evaluate the performance of the Leon3 soft-core processor in a radiation environment while instantiated in a radiation-hardened static random-access memory based field-programmable gate array. This evaluation will look at the differences between two soft-core processors: the open-source Leon3 core and the fault-tolerant Leon3 core. Radiation testing of these two cores was conducted at the Texas A&M University Cyclotron facility and Lawrence Berkeley National Laboratory. The results of these tests are included within the report along with designs intended to improve the mitigation of the open-source Leon3. The test setup used for evaluating both versions of the Leon3 is also included within this document.

Learn, Mark Walter

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

DNA and RNA sequencing by nanoscale reading through programmable electrophoresis and nanoelectrode-gated tunneling and dielectric detection  

SciTech Connect (OSTI)

An apparatus and method for performing nucleic acid (DNA and/or RNA) sequencing on a single molecule. The genetic sequence information is obtained by probing through a DNA or RNA molecule base by base at nanometer scale as though looking through a strip of movie film. This DNA sequencing nanotechnology has the theoretical capability of performing DNA sequencing at a maximal rate of about 1,000,000 bases per second. This enhanced performance is made possible by a series of innovations including: novel applications of a fine-tuned nanometer gap for passage of a single DNA or RNA molecule; thin layer microfluidics for sample loading and delivery; and programmable electric fields for precise control of DNA or RNA movement. Detection methods include nanoelectrode-gated tunneling current measurements, dielectric molecular characterization, and atomic force microscopy/electrostatic force microscopy (AFM/EFM) probing for nanoscale reading of the nucleic acid sequences.

Lee, James W.; Thundat, Thomas G.

2005-06-14T23:59:59.000Z

362

Discrimination of partial discharge electromagnetic signal in SF{sub 6} gas from external noises using phase gate control method  

SciTech Connect (OSTI)

The authors proposed phase gate control method for distinguishing frequency spectrum of electromagnetic wave caused by partial discharge (PD) in SF{sub 6} gas from external noises. They investigated the dependence of the polarity and phase angle of ac voltage on the electromagnetic wave spectrum. They derived the frequency region where PD spectrum caused by SF{sub 6} gas can be detected under noisy conditions. The authors also related quantitatively the gain of electromagnetic wave spectrum to the maximum PD charge simultaneously occurring in both SF{sub 6} gas and air. On the basis of these results, they determined the minimum detectable PD level in SF{sub 6} gas under noisy conditions as a function of measuring frequency.

Hikita, M.; Hoshino, T.; Kato, T.; Hayakawa, N.; Okubo, H. [Nagoya Univ. (Japan); Ueda, T. [Chubu Electric Power Co., Inc., Nagoya (Japan)

1996-12-31T23:59:59.000Z

363

Respiratory motion management using audio-visual biofeedback for respiratory-gated radiotherapy of synchrotron-based pulsed heavy-ion beam delivery  

SciTech Connect (OSTI)

Purpose: To efficiently deliver respiratory-gated radiation during synchrotron-based pulsed heavy-ion radiotherapy, a novel respiratory guidance method combining a personalized audio-visual biofeedback (BFB) system, breath hold (BH), and synchrotron-based gating was designed to help patients synchronize their respiratory patterns with synchrotron pulses and to overcome typical limitations such as low efficiency, residual motion, and discomfort. Methods: In-house software was developed to acquire body surface marker positions and display BFB, gating signals, and real-time beam profiles on a LED screen. Patients were prompted to perform short BHs or short deep breath holds (SDBH) with the aid of BFB following a personalized standard BH/SDBH (stBH/stSDBH) guiding curve or their own representative BH/SDBH (reBH/reSDBH) guiding curve. A practical simulation was performed for a group of 15 volunteers to evaluate the feasibility and effectiveness of this method. Effective dose rates (EDRs), mean absolute errors between the guiding curves and the measured curves, and mean absolute deviations of the measured curves were obtained within 10%50% duty cycles (DCs) that were synchronized with the synchrotrons flat-top phase. Results: All maneuvers for an individual volunteer took approximately half an hour, and no one experienced discomfort during the maneuvers. Using the respiratory guidance methods, the magnitude of residual motion was almost ten times less than during nongated irradiation, and increases in the average effective dose rate by factors of 2.394.65, 2.394.59, 1.733.50, and 1.733.55 for the stBH, reBH, stSDBH, and reSDBH guiding maneuvers, respectively, were observed in contrast with conventional free breathing-based gated irradiation, depending on the respiratory-gated duty cycle settings. Conclusions: The proposed respiratory guidance method with personalized BFB was confirmed to be feasible in a group of volunteers. Increased effective dose rate and improved overall treatment precision were observed compared to conventional free breathing-based, respiratory-gated irradiation. Because breathing guidance curves could be established based on the respective average respiratory period and amplitude for each patient, it may be easier for patients to cooperate using this technique.

He, Pengbo; Ma, Yuanyuan; Huang, Qiyan; Yan, Yuanlin [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Key Laboratory of Heavy Ion Radiation Biology and Medicine of Chinese Academy of Sciences, Lanzhou 730000 (China); School of Life Sciences, University of Chinese Academy of Sciences, Beijing 100049 (China); Li, Qiang, E-mail: liqiang@impcas.ac.cn; Liu, Xinguo; Dai, Zhongying; Zhao, Ting; Fu, Tingyan; Shen, Guosheng [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Key Laboratory of Heavy Ion Radiation Biology and Medicine of Chinese Academy of Sciences, Lanzhou 730000 (China)

2014-11-01T23:59:59.000Z

364

HaNesiim Gate Gate of Aliya  

E-Print Network [OSTI]

SC60 Jacqueline Ann Ayrton Sports Hall SC61 Samuel Ayrton Sports Pavilion SC62 Sir John and Lady Cohen Swimming Pools Edith and Louis Reitman Sports Park Michael Diller Teaching Pool 90 Gershon Cherni and Materials Engineering 60 Design Application Center 61 Energy Reservoir 62 Sir John and Lady Cohen Chemistry

Vardi, Amichay

365

Effect of sidewall surface recombination on the quantum efficiency in a Y{sub 2}O{sub 3} passivated gated type-II InAs/GaSb long-infrared photodetector array  

SciTech Connect (OSTI)

Y{sub 2}O{sub 3} was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11??m, resulting in a saturated gate bias that was 3 times lower than in a SiO{sub 2} passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100??100??m size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77?K, the gated photodetector showed dark current density and resistance-area product at ?300?mV of 2.5??10{sup ?5} A/cm{sup 2} and 1.3??10{sup 4}???cm{sup 2}, respectively, and a specific detectivity of 1.4??10{sup 12} Jones.

Chen, G.; Hoang, A. M.; Bogdanov, S.; Haddadi, A.; Darvish, S. R.; Razeghi, M., E-mail: razeghi@eecs.northwestern.edu [Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)

2013-11-25T23:59:59.000Z

366

Spin-polarization and spin-dependent logic gates in a double quantum ring based on Rashba spin-orbit effect: Non-equilibrium Green's function approach  

SciTech Connect (OSTI)

Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from ?1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted.

Eslami, Leila, E-mail: Leslami@iust.ac.ir; Esmaeilzadeh, Mahdi, E-mail: mahdi@iust.ac.ir [Department of Physics, Iran University of Science and Technology, Tehran 16846 (Iran, Islamic Republic of)

2014-02-28T23:59:59.000Z

367

Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO{sub 2} gate dielectrics  

SciTech Connect (OSTI)

We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO{sub 2} gate stack in n{sup +}-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric degradation is a composite effect of electron trapping in as-fabricated as well as newly generated neutral traps, resulting a significant amount of stress-induced leakage current and generation of surface states at the Si/SiO{sub 2} interface. Although, a significant amount of interface states are created during PBTS, the threshold voltage (V{sub T}) instability of the HfSiON based pMOS devices is primarily caused by electron trapping and detrapping. It is also shown that PBTS creates both acceptor- and donor-like interface traps via different depassivation mechanisms of the Si{sub 3}???SiH bonds at the Si/SiO{sub 2} interface in pMOS devices. However, the number of donor-like interface traps ?N{sub it}{sup D} is significantly greater than that of acceptor-like interface traps ?N{sup A}{sub it}, resulting the PBTS induced net interface traps as donor-like.

Samanta, Piyas, E-mail: piyas@vcfw.org [Department of Physics, Vidyasagar College for Women, 39 Sankar Ghosh Lane, Kolkata 700 006 (India); Huang, Heng-Sheng; Chen, Shuang-Yuan [Institute of Mechatronic Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan (China); Liu, Chuan-Hsi [Department of Mechatronic Technology, National Taiwan Normal University, No. 162, Sec. 1, He-Ping E. Rd., Taipei 106, Taiwan (China); Cheng, Li-Wei [Central R and D Division, United Microelectronics Corporation, No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan (China)

2014-02-21T23:59:59.000Z

368

Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities  

DOE Patents [OSTI]

A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings.

McEwan, Thomas E. (Livermore, CA)

1998-01-01T23:59:59.000Z

369

Synchronized operation by field programmable gate array based signal controller for the Thomson scattering diagnostic system in KSTAR  

SciTech Connect (OSTI)

The Thomson scattering diagnostic system is successfully installed in the Korea Superconducting Tokamak Advanced Research (KSTAR) facility. We got the electron temperature and electron density data for the first time in 2011, 4th campaign using a field programmable gate array (FPGA) based signal control board. It operates as a signal generator, a detector, a controller, and a time measuring device. This board produces two configurable trigger pulses to operate Nd:YAG laser system and receives a laser beam detection signal from a photodiode detector. It allows a trigger pulse to be delivered to a time delay module to make a scattered signal measurement, measuring an asynchronous time value between the KSTAR timing board and the laser system injection signal. All functions are controlled by the embedded processor running on operating system within a single FPGA. It provides Ethernet communication interface and is configured with standard middleware to integrate with KSTAR. This controller has operated for two experimental campaigns including commissioning and performed the reconfiguration of logic designs to accommodate varying experimental situation without hardware rebuilding.

Lee, W. R.; Park, M. K.; Lee, J. H. [National Fusion Research Institute, Gwahangno 113, Daejeon 305-333 (Korea, Republic of); Kim, H. S. [Chungnam National University, Daehak-ro 99, Daejeon 305-764 (Korea, Republic of); Kim, K. H. [Seed Core Co., Ltd., Daehak-ro 99, Daejeon 305-764 (Korea, Republic of)

2012-09-15T23:59:59.000Z

370

A digitizer based compact digital spectrometer for ion beam analysis using field programmable gate arrays and various energy algorithms  

SciTech Connect (OSTI)

We report on the implementation of a compact multi-detector fully digital spectrometer and data acquisition system at a nuclear microprobe for ion beam analysis and imaging. The spectrometer design allows for system scalability with no restriction on the number of detectors. It consists of four-channel high-speed digitizer modules for detector signal acquisition and one low-speed digital-to-analog converter (DAC) module with two DAC channels and additional general purpose inputs/outputs to control ion beam scanning and data acquisition. Each digitizer module of the spectrometer provides its own Field Programmable Gate Array (FPGA) as digital signal processing unit to analyze detector signals as well as to synchronize the ion beam position in hard real-time. With the customized FPGA designs for all modules, all calculation intensive tasks are executed inside the modules, which reduces significantly the data stream to and CPU load on the control computer. To achieve an optimal energy resolution for all detector/preamplifier pulse shape characteristics, a user-definable infinite impulse response filter with high throughput for energy determination was implemented. The new spectrometer has an online data analysis feature, a compact size, and is able to process any type of detector signals such as particle induced x-ray emission, Rutherford backscattering spectrometry, or scanning transmission ion microscopy.

Jger, Markus [Faculty of Mathematics and Computer Science, University of Leipzig, PF 100920, 04009 Leipzig (Germany)] [Faculty of Mathematics and Computer Science, University of Leipzig, PF 100920, 04009 Leipzig (Germany); Reinert, Tilo [Department of Physics, University of North Texas, 1155 Union Circle, Denton, Texas 76203 (United States)] [Department of Physics, University of North Texas, 1155 Union Circle, Denton, Texas 76203 (United States)

2013-08-15T23:59:59.000Z

371

A field programmable gate array-based time-resolved scaler for collinear laser spectroscopy with bunched radioactive potassium beams  

SciTech Connect (OSTI)

A new data acquisition system including a Field Programmable Gate Array (FPGA) based time-resolved scaler was developed for laser-induced fluorescence and beam bunch coincidence measurements. The FPGA scaler was tested in a collinear laser-spectroscopy experiment on radioactive {sup 37}K at the BEam COoler and LAser spectroscopy (BECOLA) facility at the National Superconducting Cyclotron Laboratory at Michigan State University. A 1.29 ?s bunch width from the buncher and a bunch repetition rate of 2.5 Hz led to a background suppression factor of 3.1 10{sup 5} in resonant photon detection measurements. The hyperfine structure of {sup 37}K and its isotope shift relative to the stable {sup 39}K were determined using 5 10{sup 4} s{sup ?1} {sup 37}K ions injected into the BECOLA beam line. The obtained hyperfine coupling constants A({sup 2}S{sub 1/2}) = 120.3(1.4) MHz, A({sup 2}P{sub 1/2}) = 15.2(1.1) MHz, and A({sup 2}P{sub 3/2}) = 1.4(8) MHz, and the isotope shift ??{sup 39,} {sup 37} = ?264(3) MHz are consistent with the previously determined values, where available.

Rossi, D. M., E-mail: rossi@nscl.msu.edu; Davis, M.; Ringle, R.; Rodriguez, J. A.; Ryder, C. A.; Schwarz, S.; Sumithrarachchi, C.; Zhao, S. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, Michigan 48824 (United States); Minamisono, K., E-mail: minamiso@nscl.msu.edu; Barquest, B. R.; Bollen, G.; Hughes, M.; Strum, R.; Tarazona, D. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 (United States); Cooper, K.; Hammerton, K.; Mantica, P. F.; Morrissey, D. J. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Chemistry, Michigan State University, East Lansing, Michigan 48824 (United States)

2014-09-15T23:59:59.000Z

372

Implementation of data acquisition interface using on-board field-programmable gate array (FPGA) universal serial bus (USB) link  

SciTech Connect (OSTI)

Typically a system consists of hardware as the controller and software which is installed in the personal computer (PC). In the effective nuclear detection, the hardware involves the detection setup and the electronics used, with the software consisting of analysis tools and graphical display on PC. A data acquisition interface is necessary to enable the communication between the controller hardware and PC. Nowadays, Universal Serial Bus (USB) has become a standard connection method for computer peripherals and has replaced many varieties of serial and parallel ports. However the implementation of USB is complex. This paper describes the implementation of data acquisition interface between a field-programmable gate array (FPGA) board and a PC by exploiting the USB link of the FPGA board. The USB link is based on an FTDI chip which allows direct access of input and output to the Joint Test Action Group (JTAG) signals from a USB host and a complex programmable logic device (CPLD) with a 24 MHz clock input to the USB link. The implementation and results of using the USB link of FPGA board as the data interfacing are discussed.

Yussup, N.; Ibrahim, M. M.; Lombigit, L.; Rahman, N. A. A.; Zin, M. R. M. [Malaysian Nuclear Agency (Nuclear Malaysia), Bangi, 43000 KAJANG (Malaysia)

2014-02-12T23:59:59.000Z

373

Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities  

DOE Patents [OSTI]

A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. 20 figs.

McEwan, T.E.

1998-06-30T23:59:59.000Z

374

Impact of titanium addition on film characteristics of HfO{sub 2} gate dielectrics deposited by atomic layer deposition  

SciTech Connect (OSTI)

The impact of 8-to 45-at. % Ti on physical and electrical characteristics of atomic-layer-deposited and annealed hafnium dioxide was studied using vacuum-ultraviolet spectroscopic ellipsometry, secondary ion mass spectroscopy, transmission electron microscopy, atomic force microscopy, x-ray diffraction, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and x-ray reflectometry. The role of Ti addition on the electrical performance is investigated using molybdenum (Mo)-gated capacitors. The film density decreases with increasing Ti addition. Ti addition stabilizes the amorphous phase of HfO{sub 2}, resulting in amorphous films as deposited. After a high-temperature annealing, the films transition from an amorphous to a polycrystalline phase. Orthorhombic Hf-Ti-O peaks are detected in polycrystalline films containing 33-at. % or higher Ti content. As Ti content is decreased, monoclinic HfO{sub 2} becomes the predominant microstructure. No TiSi is formed at the dielectric/Si interface, indicating films with good thermal stability. The band gap of Hf-Ti-O was found to be lower than that of HfO{sub 2}. Well-behaved capacitance-voltage and leakage current density-voltage characteristics were obtained for Hf-Ti-O. However, an increased leakage current density was observed with Ti addition. The data from capacitance-voltage stressing indicate a smaller flatband voltage (V{sub fb}) shift in the HfO{sub 2} films with low Ti content when compared with the HfO{sub 2} films. This indicates less charge trapping with a small amount of Ti addition.

Triyoso, D.H.; Hegde, R.I.; Zollner, S.; Ramon, M.E.; Kalpat, S.; Gregory, R.; Wang, X.-D.; Jiang, J.; Raymond, M.; Rai, R.; Werho, D.; Roan, D.; White, B.E. Jr.; Tobin, P.J. [Freescale Semiconductor, Inc., Advanced Products Research and Development Laboratory, 3501 Ed Bluestein Boulevard, Austin, Texas 78721 (United States)

2005-09-01T23:59:59.000Z

375

Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films  

SciTech Connect (OSTI)

A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800?nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates.

Roy, Sukhdev, E-mail: sukhdevroy@dei.ac.in; Yadav, Chandresh [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)] [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)

2013-12-09T23:59:59.000Z

376

Representative Control Gates  

E-Print Network [OSTI]

& Integrated - Operationaly Certified As-Deployed Baseline Mission Analysis Risk, Cost, etc Tools & MethodsUnderstand Customer Identify Feasible Alternatives Final Design Disposal Management Decision - System Deployed Requirements Concept Definition Analysis & Evaluation Definition Flowdown Criteria & Priorities Peer Review MCR

Rhoads, James

377

David Gates home page  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesData Files Data Files 1 EIA Best

378

The two-qubit controlled-phase gate based on cross-phase modulation in GaAs/AlGaAs semiconductor quantum wells  

E-Print Network [OSTI]

We present a realization of two-qubit controlled-phase gate, based on the linear and nonlinear properties of the probe and signal optical pulses in an asymmetric GaAs/AlGaAs double quantum wells. It is shown that, in the presence of cross-phase modulation, a giant cross-Kerr nonlinearity and mutually matched group velocities of the probe and signal optical pulses can be achieved while realizing the suppression of linear and self-Kerr optical absorption synchronously. These characteristics serve to exhibit an all-optical two-qubit controlled-phase gate within efficiently controllable photon-photon entanglement by semiconductor mediation. In addition, by using just polarizing beam splitters and half-wave plates, we propose a practical experimental scheme to discriminate the maximally entangled polarization state of two-qubit through distinguishing two out of the four Bell states. This proposal potentially enables the realization of solid states mediated all-optical quantum computation and information processing.

X. Q. Luo; D. L. Wang; H. Fan; W. M. Liu

2012-01-17T23:59:59.000Z

379

Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices  

SciTech Connect (OSTI)

As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metaloxidesemiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ?4.6?eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

Lee, Albert, E-mail: alee@intermolecular.com; Fuchigami, Nobi; Pisharoty, Divya; Hong, Zhendong; Haywood, Ed; Joshi, Amol; Mujumdar, Salil; Bodke, Ashish; Karlsson, Olov [Intermolecular, 3011 North First Street, San Jose, California 95134 (United States); Kim, Hoon; Choi, Kisik [GLOBALFOUNDRIES Technology Research Group, 257 Fuller Road, Albany, New York 12309 (United States); Besser, Paul [GLOBALFOUNDRIES, 1050 East Arques, Sunnyvale, California 94085 (United States)

2014-01-15T23:59:59.000Z

380

AVTA Federal Fleet PEV Readiness Data Logging and Characterization Study for the National Park Service: Golden Gate National Recreation Area  

SciTech Connect (OSTI)

Battelle Energy Alliance, LLC, managing and operating contractor for the U.S. Department of Energy's Idaho National Laboratory, is the lead laboratory for U.S. Department of Energy Advanced Vehicle Testing. Battelle Energy Alliance, LLC contracted with Intertek Testing Services, North America (ITSNA) to collect data on federal fleet operations as part of the Advanced Vehicle Testing Activity's Federal Fleet Vehicle Data Logging and Characterization study. The Advanced Vehicle Testing Activity study seeks to collect data to validate the utilization of advanced electric drive vehicle transportation. This report focuses on the Golden Gate National Recreation Area (GGNRA) fleet to identify daily operational characteristics of select vehicles and report findings on vehicle and mission characterizations to support the successful introduction of plug-in electric vehicles (PEVs) into the agencies' fleets. Individual observations of these selected vehicles provide the basis for recommendations related to electric vehicle adoption and whether a battery electric vehicle or plug-in hybrid electric vehicle (PHEV) (collectively PEVs) can fulfill the mission requirements. GGNRA identified 182 vehicles in its fleet, which are under the management of the U.S. General Services Administration. Fleet vehicle mission categories are defined in Section 4, and while the GGNRA vehicles conduct many different missions, only two (i.e., support and law enforcement missions) were selected by agency management to be part of this fleet evaluation. The selected vehicles included sedans, trucks, and sport-utility vehicles. This report will show that battery electric vehicles and/or PHEVs are capable of performing the required missions and providing an alternative vehicle for support vehicles and PHEVs provide the same for law enforcement, because each has a sufficient range for individual trips and time is available each day for charging to accommodate multiple trips per day. These charging events could occur at the vehicle home base, high-use work areas, or intermediately along routes that the vehicles frequently travel. Replacement of vehicles in the current fleet would result in significant reductions in the emission of greenhouse gases and petroleum use, while also reducing fuel costs. The San Francisco Bay Area is a leader in the adoption of PEVs in the United States. PEV charging stations, or more appropriately identified as electric vehicle supply equipment, located on the GGNRA facility would be a benefit for both GGNRA fleets and general public use. Fleet drivers and park visitors operating privately owned PEVs benefit by using the charging infrastructure. ITSNA recommends location analysis of the GGNRA site to identify the optimal placement of the electric vehicle supply equipment station. ITSNA recognizes the support of Idaho National Laboratory and ICF International for their efforts to initiate communication with the National Parks Service and GGNRA for participation in the study. ITSNA is pleased to provide this report and is encouraged by the high interest and support from the National Park Service and GGNRA personnel.

Stephen Schey; Jim Francfort

2014-03-01T23:59:59.000Z

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381

Thickness-modulated optical dielectric constants and band alignments of HfO{sub x}N{sub y} gate dielectrics  

SciTech Connect (OSTI)

Thickness-modulated optical dielectric constants and band alignments of HfO{sub x}N{sub y} films grown by sputtering have been investigated by spectroscopic ellipsometry (SE) and x-ray photoelectron spectroscopy. Based on SE measurements, it has been noted that an increase in optical dielectric constant and band gap has been observed as a function of the film thickness. Analyses of thickness-dependent band alignment of the HfO{sub x}N{sub y}/Si system indicate that the valence band offset increases, but only slight change in the conduction band offset, resulting from the thickness-induced change in the structure. The suitable optical dielectric constants and band offsets relative to Si make sputtering-derived HfO{sub x}N{sub y} film a promising candidate for high-k gate dielectrics.

He, G.; Zhang, L. D.; Liu, M.; Zhang, J. P.; Wang, X. J. [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Zhen, C. M. [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050016 (China)

2009-01-01T23:59:59.000Z

382

On the electrical stress-induced oxide-trapped charges in thin HfO{sub 2}/SiO{sub 2} gate dielectric stack  

SciTech Connect (OSTI)

Oxide charge buildup and its generation kinetics during constant voltage stress in TaN/HfO{sub 2}/SiO{sub 2}/p-Si structures have been experimentally investigated. From the oxide charge relaxation experiments, nature and energy location of the as-fabricated intrinsic hole traps in the gate stack have also been determined. Our measurement results indicate that the dispersive proton transport through the interfacial SiO{sub 2} contributes larger than hole trapping in positive charge buildup in the stack. From the bias temperature stress measurement results in both control oxide and HfO{sub 2}/SiO{sub 2} stacks, we have identified overcoordinated [Si{sub 2}=OH]{sup +} centers as the proton-induced defects located in the interfacial SiO{sub 2} layer of the stack. Finally, an empirical equation is proposed to explain the stress-induced oxide positive charge buildup.

Samanta, Piyas; Zhu Chunxiang; Chan, Mansun [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China); Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 (Singapore); Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China)

2007-09-10T23:59:59.000Z

383

New field programmable gate array-based image-oriented acquisition and real-time processing applied to plasma facing component thermal monitoring  

SciTech Connect (OSTI)

During operation of present fusion devices, the plasma facing components (PFCs) are exposed to high heat fluxes. Understanding and preventing overheating of these components during long pulse discharges is a crucial safety issue for future devices like ITER. Infrared digital cameras interfaced with complex optical systems have become a routine diagnostic to measure surface temperatures in many magnetic fusion devices. Due to the complexity of the observed scenes and the large amount of data produced, the use of high computational performance hardware for real-time image processing is then mandatory to avoid PFC damages. At Tore Supra, we have recently made a major upgrade of our real-time infrared image acquisition and processing board by the use of a new field programmable gate array (FPGA) optimized for image processing. This paper describes the new possibilities offered by this board in terms of image calibration and image interpretation (abnormal thermal events detection) compared to the previous system.

Martin, V. [Pulsar Team-Project, INRIA Sophia Antipolis, Sophia Antipolis F-06902 (France); Dunand, G.; Moncada, V. [Sophia Conseil Company, Sophia Antipolis F-06560 (France); Jouve, M.; Travere, J.-M. [CEA, IRFM, Saint-Paul-Lez-Durance F-13108 (France)

2010-10-15T23:59:59.000Z

384

Upgrading the Center for Lightweighting Automotive Materials and Processing - a GATE Center of Excellence at the University of Michigan-Dearborn  

SciTech Connect (OSTI)

The Center for Lightweighting Materials and Processing (CLAMP) was established in September 1998 with a grant from the Department of Energys Graduate Automotive Technology Education (GATE) program. The center received the second round of GATE grant in 2005 under the title Upgrading the Center for Lightweighting Automotive Materials and Processing. Using the two grants, the Center has successfully created 10 graduate level courses on lightweight automotive materials, integrated them into masters and PhD programs in Automotive Systems Engineering, and offered them regularly to the graduate students in the program. In addition, the Center has created a web-based lightweight automotive materials database, conducted research on lightweight automotive materials and organized seminars/symposia on lightweight automotive materials for both academia and industry. The faculty involved with the Center has conducted research on a variety of topics related to design, testing, characterization and processing of lightweight materials for automotive applications and have received numerous research grants from automotive companies and government agencies to support their research. The materials considered included advanced steels, light alloys (aluminum, magnesium and titanium) and fiber reinforced polymer composites. In some of these research projects, CLAMP faculty have collaborated with industry partners and students have used the research facilities at industry locations. The specific objectives of the project during the current funding period (2005 2012) were as follows: (1) develop new graduate courses and incorporate them in the automotive systems engineering curriculum (2) improve and update two existing courses on automotive materials and processing (3) upgrade the laboratory facilities used by graduate students to conduct research (4) expand the Lightweight Automotive Materials Database to include additional materials, design case studies and make it more accessible to outside users (5) provide support to graduate students for conducting research on lightweight automotive materials and structures (6) provide industry/university interaction through a graduate certificate program on automotive materials and technology idea exchange through focused seminars and symposia on automotive materials.

Mallick, P. K.

2012-08-30T23:59:59.000Z

385

Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors  

SciTech Connect (OSTI)

In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO{sub 2}/InP and HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack are presented. F had been introduced into HfO{sub 2} gate dielectric by postgate CF{sub 4} plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO{sub 2} bulk and less interface trap density at the HfO{sub 2}/III-V interface.

Chen Yenting; Zhao Han; Wang Yanzhen; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Texas 78758 (United States)

2010-06-21T23:59:59.000Z

386

Hydroacoustic Evaluation of Juvenile Salmonid Passage at The Dalles Dam Sluiceway, 2005  

SciTech Connect (OSTI)

The U.S. Army Corps of Engineers Portland District engaged the Pacific Northwest National Laboratory to evaluate fish passage at The Dalles Dam powerhouse in 2005. The goal of the study was to provide information on smolt passage that will inform decisions on long-term measures and operations to enhance sluiceway passage and reduce turbine passage to improve smolt survival at the dam. The study addressed one of the main programs dedicated to improving juvenile salmonid survival at The Dalles Dam: Surface Flow Bypass. The study objectives (see below) were met using a combination of hydroacoustic and hydraulic data. The study incorporated fixed-location hydroacoustic methods across the entire powerhouse, with especially intense sampling using multiple split-beam transducers at all sluiceway portals. We did not sample fish passage at the spillway in 2005. In the sluiceway nearfield, we used an acoustic camera to track fish movements. The fish data were interpreted with hydraulic data from a computational fluid dynamics (CFD) model. Fish passage data were collected in the framework of an experiment using a randomized block design (3-day treatments; two treatments) to compare two sluiceway operational configurations: Sluice 2+5 and Sluice 2+19 (six gates open for each configuration). Total project outflow was 76% of the 10-year average for spring and 71% of the 10-year average for summer. Based on these findings, we make the following recommendations: 1) The sluice should be operated 24 h/d from April until November. 2) Open six rather than three sluice gates to take advantage of the maximum hydraulic capacity of the sluiceway. 3) Open the three gates above the western-most operating main turbine unit and the three gates at MU 8 where turbine passage rates are relatively high. 4) Operate the turbine units below open sluice gates as a standard fish operations procedure. 5) Develop hydraulic and entrance enhancements to the sluiceway to tap the potential of The Dalles Dam sluiceway to be highly efficient and effective at passing juvenile salmonids. 6) Consider the following elements for surface flow bypasses during design of any sluiceway enhancements at The Dalles Dam: Form an extensive surface flow bypass flow net (surface bypass discharge greater than ~7% of total project discharge) at both west and east ends of the dam; Create a gradual increase in water velocity approaching the surface flow bypass (ideally, acceleration < 1 m/s per meter); Make water velocities at an entrance high enough (> 3 m/s) to entrain the subject juvenile fishes, e.g., 10,000 cfs or so; Adapt the shape and orientation of the surface entrance(s) to fit site-specific features, i.e., test a Removable Sluiceway Weir. 7)The Dalles Dam sluiceway has potential to be highly efficient and effective at passing juvenile salmonids. We recommend tapping this potential with enhancements to the sluiceway.

Johnson, Gary E.; Khan, Fenton; Hedgepeth, J; Mueller, Robert P.; Rakowski, Cynthia L.; Richmond, Marshall C.; Serkowski, John A.; Skalski, John R.

2006-06-01T23:59:59.000Z

387

InGaZnO thin film transistor with HfO{sub 2} gate insulator prepared using various O{sub 2}/(Ar + O{sub 2}) gas ratios  

SciTech Connect (OSTI)

We have investigated the effect of the deposition of an HfO{sub 2} thin film as a gate insulator with different O{sub 2}/(Ar + O{sub 2}) gas ratios using RF magnetron sputtering. The HfO{sub 2} thin film affected the device performance of amorphous indiumgalliumzinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O{sub 2}/(Ar + O{sub 2}) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm{sup 2}/(V s). Compared to those prepared with an O{sub 2}/(Ar + O{sub 2}) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm{sup 2}/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O{sub 2}/(Ar + O{sub 2}) gas ratio.

Jo, Young Je [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)] [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of); Lee, In-Hwan [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of)] [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of); Kwak, Joon Seop, E-mail: jskwak@sunchon.ac.kr [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)

2012-10-15T23:59:59.000Z

388

Image processing with cellular nonlinear networks implemented on field-programmable gate arrays for real-time applications in nuclear fusion  

SciTech Connect (OSTI)

In the past years cameras have become increasingly common tools in scientific applications. They are now quite systematically used in magnetic confinement fusion, to the point that infrared imaging is starting to be used systematically for real-time machine protection in major devices. However, in order to guarantee that the control system can always react rapidly in case of critical situations, the time required for the processing of the images must be as predictable as possible. The approach described in this paper combines the new computational paradigm of cellular nonlinear networks (CNNs) with field-programmable gate arrays and has been tested in an application for the detection of hot spots on the plasma facing components in JET. The developed system is able to perform real-time hot spot recognition, by processing the image stream captured by JET wide angle infrared camera, with the guarantee that computational time is constant and deterministic. The statistical results obtained from a quite extensive set of examples show that this solution approximates very well an ad hoc serial software algorithm, with no false or missed alarms and an almost perfect overlapping of alarm intervals. The computational time can be reduced to a millisecond time scale for 8 bit 496x560-sized images. Moreover, in our implementation, the computational time, besides being deterministic, is practically independent of the number of iterations performed by the CNN - unlike software CNN implementations.

Palazzo, S.; Vagliasindi, G.; Arena, P. [Dipartimento di Ingegneria Elettrica Elettronica e dei Sistemi, Universita degli Studi di Catania, 95125 Catania (Italy); Murari, A. [Consorzio RFX-Associazione EURATOM ENEA per la Fusione, I-35127 Padova (Italy); Mazon, D. [Association EURATOM-CEA, CEA Cadarache, 13108 Saint-Paul-lez-Durance (France); De Maack, A. [Arts et Metiers Paris Tech Engineering College (ENSAM), 13100 Aix-en-Provence (France); Collaboration: JET-EFDA Contributors

2010-08-15T23:59:59.000Z

389

Experimental investigation of bright spots in broadband, gated x-ray images of ignition-scale implosions on the National Ignition Facility  

SciTech Connect (OSTI)

Bright spots in the hot spot intensity profile of gated x-ray images of ignition-scale implosions at the National Ignition Facility [G. H. Miller et al., Opt. Eng. 443, (2004)] are observed. X-ray images of cryogenically layered deuterium-tritium (DT) and tritium-hydrogen-deuterium (THD) ice capsules, and gas filled plastic shell capsules (Symcap) were recorded along the hohlraum symmetry axis. Heterogeneous mixing of ablator material and fuel into the hot spot (i.e., hot-spot mix) by hydrodynamic instabilities causes the bright spots. Hot-spot mix increases the radiative cooling of the hot spot. Fourier analysis of the x-ray images is used to quantify the evolution of bright spots in both x- and k-space. Bright spot images were azimuthally binned to characterize bright spot location relative to known isolated defects on the capsule surface. A strong correlation is observed between bright spot location and the fill tube for both Symcap and cryogenically layered DT and THD ice targets, indicating the fill tube is a significant seed for the ablation front instability causing hot-spot mix. The fill tube is the predominant seed for Symcaps, while other capsule non-uniformities are dominant seeds for the cryogenically layered DT and THD ice targets. A comparison of the bright spot power observed for Si- and Ge-doped ablator targets shows heterogeneous mix in Symcap targets is mostly material from the doped ablator layer.

Barrios, M. A.; Suter, L. J.; Glenn, S.; Benedetti, L. R.; Bradley, D. K.; Collins, G. W.; Hammel, B. A.; Izumi, N.; Ma, T.; Scott, H.; Smalyuk, V. A. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)] [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Regan, S. P.; Epstein, R. [Laboratory for Laser Energetics, University of Rochester 250 East River Road, Rochester, New York 14623-199 (United States)] [Laboratory for Laser Energetics, University of Rochester 250 East River Road, Rochester, New York 14623-199 (United States); Kyrala, G. A. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2013-07-15T23:59:59.000Z

390

Demonstration and optimisation of an ultrafast all-optical AND logic gate using four-wave mixing in a semiconductor optical amplifier  

SciTech Connect (OSTI)

We have proposed an all-optical AND logic gate based on four-wave mixing (FWM) in a semiconductor optical amplifier (SOA) integrated with an optical filter. In the scheme proposed, the preferred logical function can be performed without using a continuous-wave (cw) signal. The modified nonlinear Schroedinger equation (MNLSE) is used for the modelling wave propagation in a SOA. The MNLSE takes into account all nonlinear effects relevant to pico- and sub-picosecond pulse durations and is solved by the finite-difference beam-propagation method (FD-BPM). Based on the simulation results, the optimal output signal with a 40-fJ energy can be obtained at a bit rate of 50 Gb s{sup -1}. In the simulations, besides the nonlinearities included in the model, the pattern effect of the signals propagating in the SOA medium and the effect of the input signal bit rate are extensively investigated to optimise the system performance. (optical logic elements)

Razaghi, M; Nosratpour, A; Das, N K

2013-02-28T23:59:59.000Z

391

Apo calmodulin binding to the L-type voltage-gated calcium channel Ca{sub v}1.2 IQ peptide  

SciTech Connect (OSTI)

The influx of calcium through the L-type voltage-gated calcium channels (LTCCs) is the trigger for the process of calcium-induced calcium release (CICR) from the sarcoplasmic recticulum, an essential step for cardiac contraction. There are two feedback mechanisms that regulate LTCC activity: calcium-dependent inactivation (CDI) and calcium-dependent facilitation (CDF), both of which are mediated by calmodulin (CaM) binding. The IQ domain (aa 1645-1668) housed within the cytoplasmic domain of the LTCC Ca{sub v}1.2 subunit has been shown to bind both calcium-loaded (Ca{sup 2+}CaM ) and calcium-free CaM (apoCaM). Here, we provide new data for the structural basis for the interaction of apoCaM with the IQ peptide using NMR, revealing that the apoCaM C-lobe residues are most significantly perturbed upon complex formation. In addition, we have employed transmission electron microscopy of purified LTCC complexes which shows that both apoCaM and Ca{sup 2+}CaM can bind to the intact channel.

Lian Luyun [School of Biological Sciences, University of Liverpool, P.O. Box 147, Liverpool L69 7ZB (United Kingdom)]. E-mail: lu-yun.lian@liverpool.ac.uk; Myatt, Daniel [School of Medicine, Cardiovascular and Endocrine Sciences, University of Manchester, Manchester M13 9NT (United Kingdom); Kitmitto, Ashraf [School of Medicine, Cardiovascular and Endocrine Sciences, University of Manchester, Manchester M13 9NT (United Kingdom)]. E-mail: ashraf.kitmitto@manchester.ac.uk

2007-02-16T23:59:59.000Z

392

Thermal response of Ru electrodes in contact with SiO{sub 2} and Hf-based high-k gate dielectrics  

SciTech Connect (OSTI)

A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO{sub 2} and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO{sub 2}, Ru/HfO{sub 2}, and Ru/HfSiO{sub x} film systems were observed through cross-sectional high-resolution transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy with electron-energy-loss spectra, and energy dispersive x-ray spectra analysis. Ru interacted with SiO{sub 2}, but remained stable on HfO{sub 2} at 1000 deg. C. The onset of Ru/SiO{sub 2} interfacial interactions is identified via silicon substrate pitting possibly from Ru diffusion into the dielectric in samples exposed to a 900 deg. C/10-s anneal. The dependence of capacitor device degradation with decreasing SiO{sub 2} thickness suggests Ru diffuses through SiO{sub 2}, followed by an abrupt, rapid, nonuniform interaction of ruthenium silicide as Ru contacts the Si substrate. Local interdiffusion detected on Ru/HfSiO{sub x} samples may be due to phase separation of HfSiO{sub x} into HfO{sub 2} grains within a SiO{sub 2} matrix, suggesting that SiO{sub 2} provides a diffusion pathway for Ru. Detailed evidence consistent with a dual reaction mechanism for the Ru/SiO{sub 2} system at 1000 deg. C is presented.

Wen, H.-C.; Lysaght, P.; Alshareef, H.N.; Huffman, C.; Harris, H.R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.H.; Campin, M. J.; Foran, B.; Lian, G.D.; Kwong, D.-L. [SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741(United States); University of Texas at Austin, Pickle Research Campus-Microelectronics and Engineering Research (PRC-MER) Building 2.606A/R9950, Austin, Texas 78712 (United States); SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States); Advanced Technology Development Facility (ATDF) Inc., 2706 Montopolis Drive, Austin, Texas 78741 (United States); University of Texas at Austin, Pickle Research Campus-Microelectronics and Engineering Research (PRC-MER) Building 2.606A/R9950, Austin, Texas 78712 (United States)

2005-08-15T23:59:59.000Z

393

Hydroacoustic Evaluation of Juvenile Salmonid Passage at The Dalles Dam in 2004  

SciTech Connect (OSTI)

The U.S. Army Corps of Engineers Portland District engaged the Pacific Northwest National Laboratory to evaluate juvenile salmon passage at The Dalles Dam in 2004 to inform decisions about long-term measures and operations to enhance sluiceway and spill passage and reduce turbine passage to improve smolt survival at the dam. PNNL used fixed-location hydroacoustic sampling across the entire project, especially at the sluiceway and spillway, using multiple split-beam transducers at selected locations. At the sluiceway nearfield, we used an acoustic camera to track fish. The fish data were interpreted and integrated with hydraulic data from a CFD model and in-field ADCP measurements. Two sluiceway operations were compared: West only (SL 1) vs. West+East (SL 1 + SL 18). Based on our findings, we concluded that The Dalles Dam sluiceway has the potential to be highly efficient and effective at passing juvenile salmonids. This potential could be tapped with hydraulic and entrance enhancements to the sluiceway. We recommended the following: (1) six rather than three sluice gates should be opened to take advantage of the maximum hydraulic capacity of the sluiceway. (2) The turbine units below open sluice gates should be operated as a standard fish operations procedure. (3) In 2005, the Corps and fisheries agencies should consider operating sluice gates in one or more of the following combinations of six gates: (a) SL 1-1, 1-2, 1-3 and SL 18-1, 18-2, 18-3 (repeat 2004 operation), (b) SL 1-1, 1-2, 1-3 and SL 11-1, 11-2, 11-3, or (c) SL 1-1, 1-2, 1-3 and SL 2-1, 2-2, 2-3. The following elements for surface flow bypasses which should be considered during design of any sluiceway enhancements at The Dalles Dam: (1) form an extensive surface flow bypass flow net (surface bypass discharge greater than {approx}7% of total project discharge), (2) create a gradual increase in water velocity approaching the surface flow bypass (ideally, acceleration < 1 m/s/m), (3) make water velocities at an entrance high enough (> 3 m/s) to entrain the subject juvenile fishes, (4) adapt the shape and orientation of the surface entrance(s) to fit site-specific features, and (5) consider installing a forebay wall to increase fish availability to the surface flow bypass.

Johnson, Gary E.; Hanks, Michael E.; Khan, Fenton; Cook, Chris B.; Hedgepeth, J; Mueller, Robert P.; Rakowski, Cynthia L.; Richmond, Marshall C.; Sargeant, Susan L.; Serkowski, John A.; Skalski, John R.

2005-06-01T23:59:59.000Z

394

Fish injury and mortality in spillage and turbine passage  

SciTech Connect (OSTI)

Spillage rather than turbine passage has generally been considered the more benign route for fish passing hydroelectric stations. However, recent studies utilizing the HI-Z Turb`N Tag recapture technique indicate that fish survival may be similar for these passage routes. Short-term ({<=}1 h) survival rates determined during 25 passage tests at propeller turbines on a variety of fish species were compared with those from six sluice/spill tests. Turbine passage survival data were partitioned by fish size, individual turbine unit size, and efficient or inefficient mode of turbine operation. The survival rate in all the turbine passage tests ranged from 81 to 100% (median 96%). Survival estimates were generally similar over the entire range of turbine discharges tested and regardless of operational mode for fish {<=}200 mm (93 to 100%; median 96%). However, studies on fish >200 mm where smaller turbines operated inefficiently were more variable. Estimated survival rates of 81 to 86% were obtained for these larger fish. These latter studies occurred at horizontal propeller type turbines where an inefficient wicket gate or turbine blade setting was tested. Survival rates obtained during the sluice/spill tests ranged from 93 to 100%, with a median of 98%. Although fish species or size did not appear an important factor, the physical characteristics of the sluice/spill area apparently did affect survival. Unobstructed spills yielded higher survival rates. Since similar passage survival rates were obtained for turbine passage (96%) compared to spill passage (98%), the strategy of diverting fishes over spillways or through bypasses should be reexamined. This is especially true when bypasses or spills are suggested as mitigation to protect emigrating juvenile anadromous fishes. Whichever strategy is chosen a quantitative evaluation of each route should be undertaken.

Heisey, P.G.; Mathur, D.; Euston, E.T. [RMC Environmental Services, Drumore, PA (United States)

1995-12-31T23:59:59.000Z

395

Anti-addiction drug ibogaine inhibits voltage-gated ionic currents: A study to assess the drug's cardiac ion channel profile  

SciTech Connect (OSTI)

The plant alkaloid ibogaine has promising anti-addictive properties. Albeit not licenced as a therapeutic drug, and despite hints that ibogaine may perturb the heart rhythm, this alkaloid is used to treat drug addicts. We have recently reported that ibogaine inhibits human ERG (hERG) potassium channels at concentrations similar to the drugs affinity for several of its known brain targets. Thereby the drug may disturb the heart's electrophysiology. Here, to assess the drug's cardiac ion channel profile in more detail, we studied the effects of ibogaine and its congener 18-Methoxycoronaridine (18-MC) on various cardiac voltage-gated ion channels. We confirmed that heterologously expressed hERG currents are reduced by ibogaine in low micromolar concentrations. Moreover, at higher concentrations, the drug also reduced human Na{sub v}1.5 sodium and Ca{sub v}1.2 calcium currents. Ion currents were as well reduced by 18-MC, yet with diminished potency. Unexpectedly, although blocking hERG channels, ibogaine did not prolong the action potential (AP) in guinea pig cardiomyocytes at low micromolar concentrations. Higher concentrations (? 10 ?M) even shortened the AP. These findings can be explained by the drug's calcium channel inhibition, which counteracts the AP-prolonging effect generated by hERG blockade. Implementation of ibogaine's inhibitory effects on human ion channels in a computer model of a ventricular cardiomyocyte, on the other hand, suggested that ibogaine does prolong the AP in the human heart. We conclude that therapeutic concentrations of ibogaine have the propensity to prolong the QT interval of the electrocardiogram in humans. In some cases this may lead to cardiac arrhythmias. - Highlights: We study effects of anti-addiction drug ibogaine on ionic currents in cardiomyocytes. We assess the cardiac ion channel profile of ibogaine. Ibogaine inhibits hERG potassium, sodium and calcium channels. Ibogaines effects on ion channels are a potential source of cardiac arrhythmias. 18-Methoxycoronaridine has a lower affinity for cardiac ion channels than ibogaine.

Koenig, Xaver; Kovar, Michael; Rubi, Lena; Mike, Agnes K.; Lukacs, Peter; Gawali, Vaibhavkumar S.; Todt, Hannes [Center for Physiology and Pharmacology, Department of Neurophysiology and -pharmacology, Medical University of Vienna, 1090 Vienna (Austria); Hilber, Karlheinz, E-mail: karlheinz.hilber@meduniwien.ac.at [Center for Physiology and Pharmacology, Department of Neurophysiology and -pharmacology, Medical University of Vienna, 1090 Vienna (Austria); Sandtner, Walter [Center for Physiology and Pharmacology, Institute of Pharmacology, Medical University of Vienna, 1090 Vienna (Austria)

2013-12-01T23:59:59.000Z

396

Attachment 3 Segmented Gate System  

E-Print Network [OSTI]

~9393 Gamma Cs-137 h Hita by HASL AM-02 MOD pci/g AM-02 MOD --- Othor htectad Radionuclides --- b a d 210 2

397

Novel Nanocrystal Floating Gate Memory  

E-Print Network [OSTI]

and experiment for metal silicide nanocrystal MOSFETmaterials such as metal, silicide and even hetero-structureand experiment for metal silicide nanocrystal MOSFET

Zhou, Huimei

2012-01-01T23:59:59.000Z

398

Gate Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGAInformationPVGate Solar

399

from Microsoft's Bill Gates. Summer  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched5 Industrial Carbon Capture andDeepwaterfors | National9 On Stratus Cloud LiquidPower

400

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress  

SciTech Connect (OSTI)

The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ?V{sub th}, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness t{sub D} and barrier thickness t{sub B}, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ?N{sub it}, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ?N{sub it} is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

Lagger, P., E-mail: peter.lagger@infineon.com [Infineon Technologies Austria AG, Siemensstrae 2, 9500 Villach (Austria); Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Wien (Austria); Steinschifter, P.; Reiner, M.; Stadtmller, M.; Denifl, G.; Ostermaier, C. [Infineon Technologies Austria AG, Siemensstrae 2, 9500 Villach (Austria); Naumann, A.; Mller, J.; Wilde, L.; Sundqvist, J. [Fraunhofer IPMS-CNT, Knigsbrcker Strae 178, 01099 Dresden (Germany); Pogany, D. [Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Wien (Austria)

2014-07-21T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


401

Influence of plasma-based in-situ surface cleaning procedures on HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack properties  

SciTech Connect (OSTI)

We report on the influence of variations in the process parameters of an in-situ surface cleaning procedure, consisting of alternating cycles of nitrogen plasma and trimethylaluminum dosing, on the interface trap density of highly scaled HfO{sub 2} gate dielectrics deposited on n-In{sub 0.53}Ga{sub 0.47}As by atomic layer deposition. We discuss the interface chemistry of stacks resulting from the pre-deposition exposure to nitrogen plasma/trimethylaluminum cycles. Measurements of interface trap densities, interface chemistry, and surface morphology show that variations in the cleaning process have a large effect on nucleation and surface coverage, which in turn are crucial for achieving low interface state densities.

Chobpattana, Varistha; Mates, Thomas E.; Mitchell, William J.; Zhang, Jack Y.; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)] [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2013-10-21T23:59:59.000Z

402

Comparison of gated Tc99m-MIBI SPECT with Tc99m-MIBI/F18-FDG SPECT imaging in the diagnosis of resting ischemia, scarring, and viability  

SciTech Connect (OSTI)

Advances in the diagnosis of myocardial ischemia/viability at rest include gated Tc99m-MIBI SPECT imaging, and F18-FDG SPECT imaging. We wished to compare gated MIBI with nongated MIBI/FDG SPECT imaging in 20 patients(pts) with CAD and LV dysfunction. MIBI and FDG uptake and wall motion (WM) at rest were graded in 16 LV segments (Segs). In Segs with at least some MIBI defects, the role of WM information was assessed for the prediction of ischemia (MIBI/FDG mismatch), scarring (MIBI/FDG match), and viability (moderate-normal FDG uptake). All pts had evidence of scarring in some Segs. 11/20 showed significant ischemia. In 10/20 pts, WM generally matched MIBI uptake, of which 6 had ischemia; Of the other 10/20, WM was worse in 3 pts and better in 7 pts. Of the latter, 4/7 had only minimal ischemia, and 3/7 had significant ischemia. Out of 320 combined Segs, 226 had MIBI defects. 80/226 Segs (35%) had ischemia. If WM was better than MIBI uptake, % ischemia only rose to 29/77 Segs (38%)(p-ns). Of 112 Segs with severe MIBI defects, 33% showed ischemia, 67% scarring, and 24% viability. Segs with WM better than severe MIBI defects showed ischemia in 34% (14/41) Segs and viability in 29%(12/41) Segs(p=ns). Segs with both severe MIBI uptake and WM defects showed scarring in 69%(55/80) Segs (p=ns). We conclude that WM information did no appreciably enhance the prediction of resting ischemia, scarring, or viability from resting MIBI uptake alone compared to MIBI/FDG SPECT imaging.

Machac, J.; Dangas, G.; Henzlova, M.J. [Mount Sinai Medical Center, NY (United States)] [and others

1996-05-01T23:59:59.000Z

403

GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide  

SciTech Connect (OSTI)

The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Alian, A.; Heyns, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Afanas'ev, V. V. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium)

2011-04-01T23:59:59.000Z

404

Suppression of Ge-O And Ge-N Bonding at Ge-HfO(2) And Ge-TiO(2) Interfaces By Deposition Onto Plasma-Nitrided Passivated Ge Substrates: Integration Issues Ge Gate Stacks Into Advanced Devices  

SciTech Connect (OSTI)

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO{sub 2} and TiO{sub 2}, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (-0.8 nm) plasma-nitrided Si suboxide, SiO{sub x}, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{sub 1} edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.

Lee, S.; Long, J.P.; Lucovsky, G.; Whitten, J.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

405

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors  

SciTech Connect (OSTI)

It is commonly accepted that interface states at the passivation surface of AlGaN/GaN heterostructures play an important role in the formation of the 2DEG density. Several interface state models are cited throughout literature, some with discrete levels, others with different kinds of distributions, or a combination of both. The purpose of this article is to compare the existing interface state models with both direct and indirect measurements of these interface states from literature (e.g., through the hysteresis of transfer characteristics of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) employing such an interface in the gate region) and Technology Computer Aided Design (TCAD) simulations of 2DEG densities as a function of the AlGaN thickness. The discrepancies between those measurements and TCAD simulations (also those commonly found in literature) are discussed. Then, an alternative model inspired by the Disorder Induced Gap State model for compound semiconductors is proposed. It is shown that defining a deep border trap inside the insulator can solve these discrepancies and that this alternative model can explain the origin of the two dimensional electron gas in combination with a high-quality interface that, by definition, has a low interface state density.

Bakeroot, B., E-mail: Benoit.Bakeroot@elis.ugent.be [Centre for Microsystems Technology (CMST), imec and Ghent University, Technologiepark 914a, 9052 Gent (Belgium); You, S.; Van Hove, M.; De Jaeger, B.; Geens, K.; Stoffels, S.; Decoutere, S. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Wu, T.-L.; Hu, J. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, 3001 Leuven (Belgium)

2014-10-07T23:59:59.000Z

406

Countering Aging Effects through Field Gate Sizing  

E-Print Network [OSTI]

. Using HSPICE and 70nm BPTM process numbers, we simulated the technique on four circuits (a ring oscillator, a fan-out four circuit, an ISCAS c432 and c2670). Over the lifetime of the circuit, our simulations predict a 8.89% and a 13% improvement in power...

Henrichson, Trenton D.

2010-01-14T23:59:59.000Z

407

Quasiprobability methods for multimode conditional optical gates  

E-Print Network [OSTI]

We present a method for computing the action of conditional linear optical transformations, conditioned on photon counting, for arbitrary signal states. The method is based on the Q-function, a quasi probability distribution for anti normally ordered moments. We treat an arbitrary number of signal and ancilla modes. The ancilla modes are prepared in an arbitrary product number state. We construct the conditional, non unitary, signal transformations for an arbitrary photon number count on each of the ancilla modes.

G. J. Milburn

2006-12-05T23:59:59.000Z

408

Engineer Nanocrystal Floating Gate Memory Scaling  

E-Print Network [OSTI]

flash memory [2-9]. Metal silicide NCs, with high density ofsemiconductors [14], metal, metallic silicide and metal-like2, 3], metal [4, 5], metallic silicide [6, 7, 8], core-shell

Ren, Jingjian

2012-01-01T23:59:59.000Z

409

WBG Gate Drivers for Power Modules  

Broader source: Energy.gov [DOE]

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

410

A laser-programmable gate array  

E-Print Network [OSTI]

. Hitachi has developed a lateral linking technique which it used to incorporate into a 4K static RA%I ~40h The programming structure is a 3 pm wide doped polysilicon run with a. 4 pm long intrinsic (undoped) gap in the middle of the run, The resistance... the previously mentioned Hitachi lateral laser link was designed specifically for use in incorporating redundancy into a mem- ory chip, Since the link is in the pull-up paths of the decoding logic its relatively high programmed resistance does not degrade...

Gullette, James Benjamin

1985-01-01T23:59:59.000Z

411

Dopamine D3 regulation of sensorimotor gating  

E-Print Network [OSTI]

Swerdlow NR. Pramipexole infusion into the nucleus accumbensbefore and after lentivirus infusion. The results of Exps. 1Creese I. Intra-accumbens infusion of D(3) receptor agonists

Chang, Wei-li

2011-01-01T23:59:59.000Z

412

GATE: Energy Efficient Vehicles for Sustainable Mobility  

Broader source: Energy.gov [DOE]

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

413

Graduate Automotive Technology Education (GATE) Initiative Awards |  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject: GuidanceNot MeasurementLogging Systems (December 1983)

414

Gates, Oregon: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation, search Equivalent6894093° Loading69.County, North Carolina:

415

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics  

SciTech Connect (OSTI)

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

Chu, L. K. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Merckling, C.; Dekoster, J.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Alian, A.; Heyns, M. [Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Hong, M. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2011-07-25T23:59:59.000Z

416

LEXSEE 35 GOLDEN GATE U.L. REV. 429 Copyright (c) 2005 Golden Gate University  

E-Print Network [OSTI]

petroleum fuel and internal combustion engine ("ICE") manufacturers, will thus be the focus of this Comment, which diminishes the size of wildlife corridors. n6 These are just a few of the international social and environmental harms associated with the petro indus- try. n7 Comprising oil companies, refineries, engine

Kammen, Daniel M.

417

Effects of additive C{sub 4}F{sub 8} during inductively coupled BCl{sub 3}/C{sub 4}F{sub 8}/Ar plasma etching of TaN and HfO{sub 2} for gate stack patterning  

SciTech Connect (OSTI)

In this work, the authors investigated the etching characteristics of TaN and HfO{sub 2} layers for gate stack patterning in BCl{sub 3}/Ar and BCl{sub 3}/C{sub 4}F{sub 8}/Ar inductively coupled plasmas and the effects of C{sub 4}F{sub 8} addition on the etch selectivity of the TaN to the HfO{sub 2} layer. Addition of C{sub 4}F{sub 8} gas to the BCl{sub 3}/Ar chemistry improved the TaN/HfO{sub 2} etch selectivity because adding the C{sub 4}F{sub 8} gas enhances the formation of the CF{sub x}Cl{sub y} passivation layer on HfO{sub 2} surface and decreased the HfO{sub 2} etch rate more rapidly than the TaN etch rate in a disproportionate way. Reduction in the etch time for HfO{sub 2} layer also increases the TaN/HfO{sub 2} etch selectivity because the etch time gets closer to the initiation time for HfO{sub 2} etching.

Ko, J. H.; Kim, D. Y.; Park, M. S.; Lee, N.-E.; Lee, S. S.; Ahn, Jinho; Mok, Hyungsoo [School of Advanced Materials Science and Engineering, and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746 (Korea, Republic of); Division of Advanced Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Konkuk University, 1 Hwayangdong, Gwangjingu, Seoul 143-701 (Korea, Republic of)

2007-07-15T23:59:59.000Z

418

E-Print Network 3.0 - acidified forested catchment Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

the catchment and vegetation is predominantly mature mixed coniferous forest of Norway spruce (Picea abies L... lakes in the catchment. The vegetation is predominantly...

419

Measuring ultrashort pulses using frequency-resolved optical gating  

SciTech Connect (OSTI)

The purpose of this program is the development of techniques for the measurement of ultrafast events important in gas-phase combustion chemistry. Specifically, goals of this program include the development of fundamental concepts and spectroscopic techniques that will augment the information currently available with ultrafast laser techniques. Of equal importance is the development of technology for ultrafast spectroscopy. For example, methods for the production and measurement of ultrashort pulses at wavelengths important for these studies is an important goal. Because the specific vibrational motion excited in a molecule depends sensitively on the intensity, I(t), and the phase, {psi}(t), of the ultrashort pulse used to excite the motion, it is critical to measure both of these quantities for an individual pulse. Unfortunately, this has remained an unsolved problem for many years. Fortunately, this year, the authors present a technique that achieves this goal.

Trebino, R. [Sandia National Laboratories, Livermore, CA (United States)

1993-12-01T23:59:59.000Z

420

GATE Center of Excellence at UAB in Lightweight Materials for...  

Broader source: Energy.gov (indexed) [DOE]

1 Mohammed Shohel Civil and Environmental Engineering, PhD (Graduated, Dec 06) Resin infusion processing of laminated composites 2 Carol Ochoa Materials Science & Engineering, PhD...

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...  

Broader source: Energy.gov (indexed) [DOE]

Methods * ANL donated licenses for Powertrain Systems Analysis Toolkit (PSAT) * Matlab Sponsored software and hardware 100K * Support EcoCAR team * Energy storage focus -...

422

Penn State DOE Graduate Automotive Technology Education (Gate...  

Broader source: Energy.gov (indexed) [DOE]

Methods * ANL donated licenses for Powertrain Systems Analysis Toolkit (PSAT) * Matlab Sponsored softwarehardware 100K * Support EcoCAR team goals * Energy storage focus...

423

Compressed Gated Range Sensing Grigorios Tsagkatakisa, Arnaud Woiselleb, George Tzagkarakisc,  

E-Print Network [OSTI]

emitting diode (LED), and an imaging sensor in order to generate a 2D depth map of a scene. Time. INTRODUCTION Active Range Imaging systems employ an active illumination source, typically a laser or a light

Tsakalides, Panagiotis

424

August19,2009 MaryGatesHallCommons  

E-Print Network [OSTI]

on fixed tissues. Environmental Presence of MRSA on Seattle ATMs Mehak Ahluwalia, Senior, Environmental Experience Program Community-associated methicillin-resistant Staphylococcus aureus (CA-MRSA) has become a major healthcare concern. MRSA may be spread via direct person- person contact or via contact

Van Volkenburgh, Elizabeth

425

I(DDQ) testing of field programmable gate arrays  

E-Print Network [OSTI]

vectors needed are significantly less than for a voltage-based testing technique. All components in the FPGA chip except the configuration logic are considered. The resources consist of three parts: configurable logic blocks (CLBs), input/output blocks...

Zhao, Lan

1997-01-01T23:59:59.000Z

426

Novel Nonvolatile Memories With Engineered Nanocrystal Floating Gate  

E-Print Network [OSTI]

synthesis, such as metals and silicides. Basically, PVD isThe incorporation of metal silicides in MOS devices has abe improved by replacing metal with silicide nanocrystals.

Li, Bei

2010-01-01T23:59:59.000Z

427

High Temperature, High Voltage Fully Integrated Gate Driver Circuit  

Broader source: Energy.gov (indexed) [DOE]

driver circuit, 5-V on- chip voltage regulator, short-circuit protection, undervoltage lockout, bootstrap capacitor, dead time controller and temperature sensor * 0.8-micron,...

428

GATE Center of Excellence in Lightweight Materials and Manufacturing Technologies  

Broader source: Energy.gov [DOE]

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

429

Observation of molecular orbital gating Hyunwook Song1,2  

E-Print Network [OSTI]

, Heejun Jeong3 , Mark A. Reed4 & Takhee Lee1,2 The control of charge transport in an active electronic to be observed in an electrochemical break junction11 , but until now proof of directorbitalgate controlofa solid

Reed, Mark

430

advanced gate drive: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

in the evolution of centrifugal... pumps and their application. The fundamentals of variable speed centrifugal pump operation are reviewed, then the advantages and evaluation...

431

Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

or phosphorus. Increased fertilizer runoff is a concern for harvesting corn stover for ethanol production. 37500.pdf More Documents & Publications Opportunities for Farmers in...

432

August16th,2007 MaryGatesHallCommons  

E-Print Network [OSTI]

undergraduate researchers: "[An] important thing I learned is that what you put into a project deter- mines what cancer susceptibility can be attributed to inherited germ line mutations in BRCA1. The BRCA1 gene product will give insight into the structural interaction that makes the ubiquitin ligase complex active

Van Volkenburgh, Elizabeth

433

thebulletin27 November 2011 -Issue 108 Gates Foundation funding  

E-Print Network [OSTI]

matter that collectively make it very good for the microbial fuel cells. "When we first started using in the cost of creating MFCs is likely to continue. This means it is now becoming feasible to create stacks to scale up the MFCs into a `stack' so that they can produce a meaningful level of power. The stacks

Aickelin, Uwe

434

GATE Center of Excellence in Lightweight Materials and Manufacturing...  

Broader source: Energy.gov (indexed) [DOE]

Cooling Zones: 6 DOE Merit Review May 2012 Vibration Frequency Response of foam-polymer beams -10 -5 0 5 10 15 20 25 30 35 0 2000 4000 6000 8000 10000 12000 14000 Amplitude(dB)...

435

GATE Center of Excellence in Lightweight Materials and Manufacturing...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams 43 Lightweighting Vehicles * Lightweight Materials - Composites Technology Magazine *...

436

GATE Center of Excellence at UAB in Lightweight Materials for...  

Broader source: Energy.gov (indexed) [DOE]

& Pelletizer DOE Merit Review May 2011 Vibration Frequency Response of foam-polymer beams -10 -5 0 5 10 15 20 25 30 35 0 2000 4000 6000 8000 10000 12000 14000 Amplitude(dB)...

437

An automatic placement algorithm for high-density gate arrays  

E-Print Network [OSTI]

of the quadratic assignment problem which in turn is a special case of the placement problem. The assignment problem involves the task of trying to assign n modules to n locations (on the array) where there is a cost a, i of assigning module i to location j.... If p is a permutation of the first n integers, the problem then becomes a, finding of the minimum cost over all permutations p, where p(i) = j is the location of module i. Since there are n! permutstions of n integers, there are n! distinct ways...

Vrana, Gregory Michael

1987-01-01T23:59:59.000Z

438

Quantum gates, sensors, and systems with trapped ions  

E-Print Network [OSTI]

Quantum information science promises a host of new and useful applications in communication, simulation, and computational algorithms. Trapped atomic ions are one of the leading physical systems with potential to implement ...

Wang, Shannon Xuanyue

2012-01-01T23:59:59.000Z

439

Predicting violations at gated active highway-railroad grade crossings  

E-Print Network [OSTI]

-railroad grade crossing. It also was recommended that constant warning time devices be used whenever feasible with priority given to crossings with multiple tracks and/or average train speeds below 35 km/hr....

Bean, Jonathan Alan

1997-01-01T23:59:59.000Z

440

Choosing a gate dielectric for graphene based transistors  

E-Print Network [OSTI]

Much attention has recently been focused on graphene as an alternative semiconductor to silicon. Transistors with graphene conduction channels have only recently been fabricated and their performance remains to be optimized. ...

Hsu, Pei-Lan, M. Eng. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode  

E-Print Network [OSTI]

metallization process ivas required because separate potentials must be apphed to the top and base ol' the defined mesas. A potent&al is apphed to the top of the mesas to inject carriers for tunneling through the douhle barrier heterostructures A. rectifying... was a demetal/degrease cleanup process which re- moved any contamination that may have been nn the wal'er. This process ivas followed by deposition of AuGe/Ni on the ivafer's backside which ivill provide an ohmic contact after annealing. The backside...

Kinard, William Brian

1989-01-01T23:59:59.000Z

442

GATE Center of Excellence in Lightweight Materials and Manufacturing  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject: Guidance for Fast-TrackApplications |

443

GATE Center of Excellence in Sustainable Vehicle Systems | Department of  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject: Guidance for Fast-TrackApplications |Energy

444

GATE: Energy Efficient Vehicles for Sustainable Mobility | Department of  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject: Guidance for Fast-TrackApplications

445

Ocean Gate, New Jersey: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy ResourcesLoading map...(Utility Company)ReferencesNuiqsut,Place,Oakmont,ObionAcres,LLC Jump to:3

446

PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L d F SSales LLCDieselEnergyHistory andPEMFC R&D at the DOE

447

Penn State DOE Graduate Automotive Technology Education (Gate) Program for  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L d F SSalesOE0000652Grow Your EnergyTechnology toPaulStorage Systems

448

Thermosensitive gating effect and selective gas adsorption in a porous  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest RegionatSearchScheduled System BurstLong TermScience Jeffersoncoordination

449

The University of Tennessee's GATE Center for Hybrid Systems | Department  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion |Energy Usage »of EnergyThe EnergyDepartment of Energy The U.S. and China -of

450

The University of Tennessee's GATE Center for Hybrid Systems | Department  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion |Energy Usage »of EnergyThe EnergyDepartment of Energy The U.S. and China -ofof

451

The University of Tennessee's GATE Center for Hybrid Systems | Department  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion |Energy Usage »of EnergyThe EnergyDepartment of Energy The U.S. and China -ofofof

452

GATE Center of Excellence in Sustainable Vehicle Systems  

Broader source: Energy.gov [DOE]

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

453

Microsoft Word - S.J. Gates-1.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment SurfacesResource Program Preliminary Needs Assessment March 2009 BSep 20,07

454

South Gate, California: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty Ltd JumpGTZ Partner Central Energy

455

South Gate, Maryland: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty Ltd JumpGTZ Partner Central

456

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6,Local CorrelationsConditions. |SchoolLooking at

457

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6,Local CorrelationsConditions. |SchoolLooking

458

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6,Local CorrelationsConditions. |SchoolLookingLooking

459

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6,Local CorrelationsConditions.

460

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6,Local CorrelationsConditions.Looking at Transistor

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Gates County, North Carolina: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation, search Equivalent6894093° Loading69.County, North Carolina: Energy

462

Gates Mills, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation, search Equivalent6894093° Loading69.County, North Carolina: EnergyMills

463

High Temperature, High Voltage Fully Integrated Gate Driver Circuit |  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject:Ground Hawaii HIGH PERFORMANCE andHighWells |

464

High Temperature, High Voltage Fully Integrated Gate Driver Circuit |  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject:Ground Hawaii HIGH PERFORMANCE andHighWells |Department

465

AgraGate Carbon Credits Corporation | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 East 300 SouthWaterBrasil JumpAerowatt Energies JumpAgPro JumpAgenera, LLC

466

CNEEC - Electrolyte Gating by David Goldhaber-Gordon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation InInformationCenterResearchCASL Symposium: Celebrating

467

Bill Gates visit to Idaho validates innovation role for national  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth (AOD)ProductssondeadjustsondeadjustAboutScienceCareers Apply for aCould Work as HeatBilayerlaboratories

468

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickrinformationPostdocsCenterCentera A B C D ELong TermJefferson

469

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickrinformationPostdocsCenterCentera A B C D ELong TermJeffersonLooking

470

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickrinformationPostdocsCenterCentera A B C D ELong

471

Women @ Energy: Dianne Gates-Anderson | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-Up from theDepartment of Dept.| WEATHERIZATION5 |andWisingCheryl

472

Self-terminating diffraction gates femtosecond X-ray nanocrystallography  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmitted forHighlights NuclearSelf-Supplied-Balancing-Reserves

473

Possible Dynamically Gated Conductance along Heme Wires in Bacterial  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home Design Passive SolarCenterYouPortsmouth/Paducah Project

474

THE GROWTH MECHANISMS OF ULTRATHIN GATE DIELECTRICS ON SILICON  

E-Print Network [OSTI]

in the passive oxidation regime, while etching in the active oxidation regime made the surface slightly rougher. A roughening regime is also observed in between the active and passive oxidation regimes and causes, I was fortunate to share a house with Alex See, from whom Qing-Tang heard about me and recruited me

Gustafsson, Torgny

475

Gate-Level Characterization: Foundations and Hardware Security Applications  

E-Print Network [OSTI]

Meguerdichian Miodrag Potkonjak Computer Science Department University of California, Los Angeles (UCLA) Los and manifestation properties. It is a key step in the IC applications regarding cryptography, security, and digital rights management. However, GLC is challenging due to the existence of manufacturing variability (MV

Potkonjak, Miodrag

476

Cold test plan for the Old Hydrofracture Facility tank contents removal project, Oak Ridge National Laboratory, Oak Ridge, Tennessee  

SciTech Connect (OSTI)

This Old Hydrofracture Facility (OHF) Tanks Contents Removal Project Cold Test Plan describes the activities to be conducted during the cold test of the OHF sluicing and pumping system at the Tank Technology Cold Test Facility (TTCTF). The TTCTF is located at the Robotics and Process Systems Complex at the Oak Ridge National Laboratory (ORNL). The cold test will demonstrate performance of the pumping and sluicing system, fine-tune operating instructions, and train the personnel in the actual work to be performed. After completion of the cold test a Technical Memorandum will be prepared documenting completion of the cold test, and the equipment will be relocated to the OHF site.

NONE

1997-11-01T23:59:59.000Z

477

Hanford Site Tank 241-C-108 Residual Waste Contaminant Release Models and Supporting Data  

SciTech Connect (OSTI)

This report presents the results of laboratory characterization, testing, and analysis for a composite sample (designated 20578) of residual waste collected from single-shell tank C-108 during the waste retrieval process after modified sluicing. These studies were completed to characterize concentration and form of contaminant of interest in the residual waste; assess the leachability of contaminants from the solids; and develop release models for contaminants of interest. Because modified sluicing did not achieve 99% removal of the waste, it is expected that additional retrieval processing will take place. As a result, the sample analyzed here is not expected to represent final retrieval sample.

Cantrell, Kirk J.; Krupka, Kenneth M.; Geiszler, Keith N.; Arey, Bruce W.; Schaef, Herbert T.

2010-06-18T23:59:59.000Z

478

System design description for portable 1,000 CFM exhauster Skids POR-007/Skid E and POR-008/Skid F  

SciTech Connect (OSTI)

The primary purpose of the two 1,000 CFM Exhauster Skids, POR-007-SKID E and POR-008-SKID F, is to provide backup to the waste tank primary ventilation systems for tanks 241-C-106 and 241-AY-102, and the AY-102 annulus in the event of a failure during the sluicing of tank 241-C-106 and subsequent transfer of sluiced waste to 241-AY-102. This redundancy is required since both of the tank ventilation systems have been declared as Safety Class systems.

Nelson, O.D.

1998-07-25T23:59:59.000Z

479

The civic forum in ancient Israel : the form, function, and symbolism of city gates  

E-Print Network [OSTI]

of a small strip of lime plaster flooring found inside the 4the other half had a lime plaster finish (Ussishkin, Areaa few patches of lime plaster were found on top of the

Frese, Daniel Allan

2012-01-01T23:59:59.000Z

480

Molecular gating dynamics of the cytoplasmic domains of inwardly rectifying potassium (Kir) channels  

E-Print Network [OSTI]

Neurosci 20, 156-162. Plaster, N. M. , Tawil, R. , Tristani-channels. Neuron 37, 953-962. Plaster, N. M. , Tawil, R. ,H. , Fidzianska, A. , Plaster, N. , et al. (2002).

Pegan, Scott Dusan

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

09 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. ti02erickson...

482

Na K -pump ligands modulate gating of palytoxin-induced ion channels  

E-Print Network [OSTI]

proteins that mediate transport of ions across cell membranes, they traditionally have been viewed as very to the extracellular surface. The 3Na 2K -exchange transport cycle is completed when two extracellular K ions bind ensure the vectorial nature of net transport. The occluded-ion conformations, with binding sites

Gadsby, David

483

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect (OSTI)

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

484

Penn State DOE GATE Center of Exellence for In-Vehicle, High...  

Broader source: Energy.gov (indexed) [DOE]

Vehicles * ANL donated licenses for Powertrain Systems Analysis Toolkit (PSAT) * Matlab Sponsored software and hardware * Supporting EcoCAR proposal * Energy storage focus -...

485

Zirconium-doped tantalum oxide high-k gate dielectric films  

E-Print Network [OSTI]

A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include...

Tewg, Jun-Yen

2005-02-17T23:59:59.000Z

486

SST-GATE: A dual mirror telescope for the Cherenkov Telescope Array  

E-Print Network [OSTI]

The Cherenkov Telescope Array (CTA) will be the world's first open observatory for very high energy gamma-rays. Around a hundred telescopes of different sizes will be used to detect the Cherenkov light that results from gamma-ray induced air showers in the atmosphere. Amongst them, a large number of Small Size Telescopes (SST), with a diameter of about 4 m, will assure an unprecedented coverage of the high energy end of the electromagnetic spectrum (above ~1TeV to beyond 100 TeV) and will open up a new window on the non-thermal sky. Several concepts for the SST design are currently being investigated with the aim of combining a large field of view (~9 degrees) with a good resolution of the shower images, as well as minimizing costs. These include a Davies-Cotton configuration with a Geiger-mode avalanche photodiode (GAPD) based camera, as pioneered by FACT, and a novel and as yet untested design based on the Schwarzschild-Couder configuration, which uses a secondary mirror to reduce the plate-scale and to all...

Zech, A; Blake, S; Boisson, C; Costille, C; De-Frondat, F; Dournaux, J -L; Dumas, D; Fasola, G; Greenshaw, T; Hervet, O; Huet, J -M; Laporte, P; Rulten, C; Savoie, D; Sayede, F; Schmoll, J

2013-01-01T23:59:59.000Z

487

E-Print Network 3.0 - airport gate assignment Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Energy Storage, Conversion and Utilization 9 When the Model Hits the Runway: The DOZE Algorithm for optimal dispatching of Summary: the problem of assigning es- corts to accompany...

488

E-Print Network 3.0 - aircraft gates Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

9 Airspace Management Decision Tool Validating the Behavior and Structure of Software Design Summary: or to take off). 4. The airport owns two taxiways. An aircraft may...

489

Double-gated isolated vertically aligned carbon nanofiber field emission and field ionization arrays  

E-Print Network [OSTI]

Electron impact ionization (ElI) is used extensively in mass spectrometry for gas-phase analytes. Due to the significant amount of fragmentation generated by ElI, the spectrum is usually very noisy. In addition, the ...

Chen, Liang-Yu, 1979-

2007-01-01T23:59:59.000Z

490

Fiber-Optic Stethoscope: A Cardiac Monitoring and Gating System for Magnetic Resonance Microscopy  

E-Print Network [OSTI]

during magnetic resonance imaging (MRI) is the distortion of the ECG due to electromagnetic interference

491

Elephant Beer and Shinto Gates: Managing Similar Concepts in a Multilingual Database  

E-Print Network [OSTI]

of synonymy; a trio of recent articles in the International Journal of Lexicography (2013) by Adamska be ranked on a scien- tific or whimsical basis ­ a corpus count would place the groups for light (energy

492

JOURNAL OF HYDRAULIC ENGINEERING / SEPTEMBER 1999 / 979 TIME OF OPENING OF IRRIGATION CANAL GATES  

E-Print Network [OSTI]

attenuation rates of small-amplitude surface transients across the entire spec- trum of shallow water waves, from kinematic to gravity waves. Specifically, we focus on the dimensionless wave numbers close transients. Wave attenuation is expressed in terms of a dimensionless parameter containing both steady

Ponce, V. Miguel

493

Chemical-Scale Studies of G Protein-Coupled Receptors and Ligand-Gated Ion Channels  

E-Print Network [OSTI]

. Oliver Shafaat and Fan Liu have orders of magnitude more mathematical competence than I do. I really occasion. Tim Miles knows how to chart his own path and excel at it. I've appreciated his friendship

Winfree, Erik

494

Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film  

SciTech Connect (OSTI)

This paper reports comprehensive structural and chemical analyses for the combinatorial Ta-C-N/HfO{sub 2} system, crucial data for understanding the electrical properties of Ta-C-N/HfO{sub 2}. Combinatorial Ta-C-N 'library' (composition spread) films were deposited by magnetron sputtering. Electron probe wavelength dispersive spectroscopy and x-ray fluorescence-yield near-edge spectroscopy were used to quantitatively determine the composition across these films. Scanning x-ray microdiffractometry determined that a solid solution of Ta(C,N){sub x} forms and extends to compositions (0.3<=Ta<=0.5 and 0.57<=Ta<=0.67) that were previously unknown. The thermal stability of the Ta-C-N/HfO{sub 2} library was studied using high resolution transmission electron microscopy, which shows Ta-C-N/HfO{sub 2}/SiO{sub 2}/Si exhibiting good thermal stability up to 950 deg. C.

Chang, K.-S. [National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899 (United States); Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 (United States); Green, M. L.; Levin, I.; Hattrick-Simpers, J. R.; Jaye, C.; Fischer, D. A. [National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899 (United States); Takeuchi, I. [Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 (United States); De Gendt, S. [IMEC, Kapeldreef 75, B-3001 Leuven, Belgium and Department of Chemistry, KU Leuven, 3000 Leuven (Belgium)

2010-05-10T23:59:59.000Z

495

Gate-Dependent Carrier Diffusion Length in Lead Selenide Quantum Dot Field-Effect Transistors  

E-Print Network [OSTI]

-generation solar panels. Strongly confined QDs such as lead selenide (PbSe) also have the potential to benefit from- generation photovoltaic devices and sensitive photodetec- tors.1-3 The potential for low fabrication cost improvements are still necessary for QD solar cells to compete with commercial technologies. In particular

Yu, Dong

496

Monte Carlo Simulations of Microchannel Plate Based, Fast-Gated X-Ray Imagers  

SciTech Connect (OSTI)

This is a chapter in a book titled Applications of Monte Carlo Method in Science and Engineering Edited by: Shaul Mordechai ISBN 978-953-307-691-1, Hard cover, 950 pages Publisher: InTech Publication date: February 2011

Wu., M., Kruschwitz, C.

2011-02-01T23:59:59.000Z

497

Tracking transmitter-gated P2X cation channel activation in vitro and in vivo  

E-Print Network [OSTI]

channels that show calcium fluxes. We genetically engineered rat P2X receptors to carry calcium sensors, comprising the Cys-loop, glutamate and P2X receptor families1, collectively underlie excitatory fast synaptic

Newman, Eric A.

498

A Database for Fast Access to Particle-Gated Event Data  

E-Print Network [OSTI]

In nuclear physics experiments involving in-flight fragmentation of ions, usually a large number of different nuclei is produced and various detection systems are employed to identify the species event by event, e.g. by measuring their specific energy loss and time-of-flight. For such cases -- not necessarily limited to nuclear physics -- where subsets of a large dataset can be identified using a small number of measured signals a software for fast access to varying subsets of such a dataset has been developed. The software has been used successfully in the analysis of a one neutron knock-out experiment at GANIL.

A. Brger

2007-02-08T23:59:59.000Z

499

E-Print Network 3.0 - advanced gate stack Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Diego Collection: Computer Technologies and Information Sciences 20 Novel Si-based Optoelectronic Switching Device: Light to Latch Ali K. Okyay, Abhijit J. Pethe, Duygu Kuzum,...

500

DOI: 10.1002/adma.200601908 Piezoelectric Gated Diode of a Single ZnO Nanowire**  

E-Print Network [OSTI]

Institute of Physics. DOI: 10.1063/1.2193468 Electrical and optoelectronic devices such as field class of organic optoelectronic devices has been demonstrated, i.e., organic light-emitting transistors

Wang, Zhong L.