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Sample records for l-lake sluice gate

  1. Aerosol characteristics in the offgas from a pilot-scale sluicing operation

    SciTech Connect (OSTI)

    Ligotke, M.W.; Whyatt, G.A.; Beckette, M.R.

    1995-01-01

    A pilot-scale study was performed to simulate conditions anticipated during sluicing operations to retrieve waste in single-shell Tank 241-C-106 at the US Department of Energy`s Hanford Site in southeastern Washington. The objective of the study was to identify and characterize the potential aerosol source term at the inlet of the headspace exhaust ventilation system during sluicing operations. The information is needed to support decisions for components to be used in the full-scale operation. A secondary objective was to qualitatively evaluate the visibility during sluicing. Three simulated sluicing tests were performed in the 336 Building`s quarter-scale waste tank facility located at Hanford. Scaling relationships were used to guide modifications to the quarter-scale tank to accommodate tests that simulated tank geometry, sluicing, and ventilation conditions in the full-scale tank. Simulated sluicing fluids were targeted on solid and liquid surfaces during the tests. Test conditions were monitored, and aerosol measurements were made in the offgas ventilation duct. Also during the tests, an in-tank camera was used to monitor visibility.

  2. Waste retrieval sluicing system data acquisition system acceptance test report

    SciTech Connect (OSTI)

    Bevins, R.R.

    1998-07-31

    This document describes the test procedure for the Project W-320 Tank C-106 Sluicing Data Acquisition System (W-320 DAS). The Software Test portion will test items identified in the WRSS DAS System Description (SD), HNF-2115. Traceability to HNF-2115 will be via a reference that follows in parenthesis, after the test section title. The Field Test portion will test sensor operability, analog to digital conversion, and alarm setpoints for field instrumentation. The W-320 DAS supplies data to assist thermal modeling of tanks 241-C-106 and 241-AY-102. It is designed to be a central repository for information from sources that would otherwise have to be read, recorded, and integrated manually. Thus, completion of the DAS requires communication with several different data collection devices and output to a usable PC data formats. This test procedure will demonstrate that the DAS functions as required by the project requirements stated in Section 3 of the W-320 DAS System Description, HNF-2115.

  3. Using historical aerial photography and softcopy photogrammetry for waste unit mapping in L Lake.

    SciTech Connect (OSTI)

    Christel, L.M.

    1997-10-01

    L Lake was developed as a cooling water reservoir for the L Reactor at the Savannah River Site. The construction of the lake, which began in the fall of 1984, altered the structure and function of Steel Creek. Completed in the fall of 1985, L Lake has a capacity of 31 million cubic meters and a normal pool of 58 meters. When L Reactor operations ceased in 1988, the water level in the lake still had to be maintained. Site managers are currently trying to determine the feasibility of draining or drawing down the lake in order to save tax dollars. In order to understand the full repercussions of such an undertaking, it was necessary to compile a comprehensive inventory of what the lake bottom looked like prior to filling. Aerial photographs, acquired nine days before the filling of the lake began, were scanned and used for softcopy photogrammetry processing. A one-meter digital elevation model was generated and a digital orthophoto mosaic was created as the base map for the project. Seven categories of features, including the large waste units used to contain the contaminated soil removed from the dam site, were screen digitized and used to generate accurate maps. Other map features include vegetation waste piles, where contaminated vegetation from the flood plain was contained, and ash piles, which are sites where vegetation debris was burned and then covered with clean soil. For all seven categories, the area of disturbance totaled just over 63 hectares. When the screen digitizing was completed, the elevation at the centroid of each disturbance was determined. When the information is used in the Savannah River Site Geographical Information System, it can be used to visualize the various L Lake draw-down scenarios suggested by site managers and hopefully, to support evaluations of the cost effectiveness for each proposed activity.

  4. CX-010121: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    685-G Par Pond and 686-G L-Lake Sluice Gate Conduit Cleanouts/Inspections CX(s) Applied: B1.3 Date: 03/21/2013 Location(s): South Carolina Offices(s): Savannah River Operations Office

  5. CX-011819: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    685-G PAR Pond and 686-G L-Lake Sluice Gate Conduit Cleanouts/Inspections CX(s) Applied: B1.3 Date: 01/27/2014 Location(s): South Carolina Offices(s): Savannah River Operations Office

  6. Steel Creek primary producers: Periphyton and seston, L-Lake/Steel Creek Biological Monitoring Program, January 1986--December 1991

    SciTech Connect (OSTI)

    Bowers, J.A. [Westinghouse Savannah River Co., Aiken, SC (United States); Toole, M.A.; van Duyn, Y. [Normandeau Associates Inc., New Ellenton, SC (United States)

    1992-02-01

    The Savannah River Site (SRS) encompasses 300 sq mi of the Atlantic Coastal Plain in west-central South Carolina. Five major tributaries of the Savannah River -- Upper Three Runs Creek, Four Mile Creek, Pen Branch, Steel Creek, and Lower Three Runs Creek -- drain the site. In 1985, L Lake, a 400-hectare cooling reservoir, was built on the upper reaches of Steel Creek to receive effluent from the restart of L-Reactor and to protect the lower reaches from thermal impacts. The Steel Creek Biological Monitoring Program was designed to assess various components of the system and identify and changes due to the operation of L-Reactor or discharge from L Lake. An intensive ecological assessment program prior to the construction of the lake provided baseline data with which to compare data accumulated after the lake was filled and began discharging into the creek. The Department of Energy must demonstrate that the operation of L-Reactor will not significantly alter the established aquatic ecosystems. This report summarizes the results of six years` data from Steel Creek under the L-Lake/Steel Creek Monitoring Program. L Lake is discussed separately from Steel Creek in Volumes NAI-SR-138 through NAI-SR-143.

  7. Project W-320, 241-C-106 sluicing: Construction specification W-320-C5

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  8. Project W-320, 241-C-106 sluicing: Construction specification W-320-C2

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  9. Project W-320, 241-C-106 sluicing: Construction specification W-320-C7

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  10. Project W-320, 241-C-106 sluicing: Construction specification W-320-C1

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  11. Quality control summary report for the RFI/RI assessment of the submerged sediment core samples taken at Par Pond, Pond C, and L-Lake

    SciTech Connect (OSTI)

    Koch, J. II

    1996-12-01

    This report presents a summary of the sediment characterization performed under the direction of the Westinghouse Savannah River Company`s (WSRC) Environmental Protection Department/Environmental Monitoring Section (EPD/EMS) in support of Par Pond, Pond C, and L- Lake. This characterization will be a screening study and will enable the Environmental Sciences Section (ESS) to develop a defensible contaminants of concern list for more extensive characterization of the Par Pond, Pond C, and L-Lake.

  12. Gate Access

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory ofDid you not find whatGasEnergyfeatureCleanperformanceCareersGate Access Gate

  13. Safety evaluation for packaging transportation of equipment for tank 241-C-106 waste sluicing system

    SciTech Connect (OSTI)

    Calmus, D.B.

    1994-08-25

    A Waste Sluicing System (WSS) is scheduled for installation in nd waste storage tank 241-C-106 (106-C). The WSS will transfer high rating sludge from single shell tank 106-C to double shell waste tank 241-AY-102 (102-AY). Prior to installation of the WSS, a heel pump and a transfer pump will be removed from tank 106-C and an agitator pump will be removed from tank 102-AY. Special flexible receivers will be used to contain the pumps during removal from the tanks. After equipment removal, the flexible receivers will be placed in separate containers (packagings). The packaging and contents (packages) will be transferred from the Tank Farms to the Central Waste Complex (CWC) for interim storage and then to T Plant for evaluation and processing for final disposition. Two sizes of packagings will be provided for transferring the equipment from the Tank Farms to the interim storage facility. The packagings will be designated as the WSSP-1 and WSSP-2 packagings throughout the remainder of this Safety Evaluation for Packaging (SEP). The WSSP-1 packagings will transport the heel and transfer pumps from 106-C and the WSSP-2 packaging will transport the agitator pump from 102-AY. The WSSP-1 and WSSP-2 packagings are similar except for the length.

  14. Imaging through obscurations for sluicing operations in the waste storage tanks

    SciTech Connect (OSTI)

    Peters, T.J.; McMakin, D.L.; Sheen, D.M.; Chieda, M.A.

    1994-08-01

    Waste remediators have identified that surveillance of waste remediation operations and periodic inspections of stored waste are required under very demanding and difficult viewing environments. In many cases, obscurants such as dust or water vapor are generated as part of the remediation activity. Methods are required for viewing or imaging beyond the normal visual spectrum. Work space images guide the movement of remediation equipment, creating a need for rapidly updated, near real-time imaging capability. In addition, there is a need for three-dimensional topographical data to determine the contours of the wastes, to plan retrieval campaigns, and to provide a three-dimensional map of a robot`s work space as basis for collision avoidance. Three basic imaging techniques were evaluated: optical, acoustic and radar. The optical imaging methods that were examined used cameras which operated in the visible region and near-infrared region and infrared cameras which operated in the 3--5 micron and 8--12 micron wavelength regions. Various passive and active lighting schemes were tested, as well as the use of filters to eliminate reflection in the visible region. Image enhancement software was used to extend the range where visual techniques could be used. In addition, the operation of a laser range finder, which operated at 0.835 microns, was tested when fog/water droplets were suspended in the air. The acoustic technique involved using commercial acoustic sensors, operating at approximately 50 kHz and 215 kHz, to determine the attenuation of the acoustic beam in a high-humidity environment. The radar imaging methods involved performing millimeter wave (94 GHz) attenuation measurement sin the various simulated sluicing environments and performing preliminary experimental imaging studies using a W-Band (75--110 GHz) linearly scanned transceiver in a laboratory environment. The results of the tests are discussed.

  15. Range gated imaging experiments using gated intensifiers

    SciTech Connect (OSTI)

    McDonald, T.E. Jr.; Yates, G.J.; Cverna, F.H.; Gallegos, R.A.; Jaramillo, S.A.; Numkena, D.M.; Payton, J.; Pena-Abeyta, C.R.

    1999-03-01

    A variety of range gated imaging experiments using high-speed gated/shuttered proximity focused microchannel plate image intensifiers (MCPII) are reported. Range gated imaging experiments were conducted in water for detection of submerged mines in controlled turbidity tank test and in sea water for the Naval Coastal Sea Command/US Marine Corps. Field experiments have been conducted consisting of kilometer range imaging of resolution targets and military vehicles in atmosphere at Eglin Air Force Base for the US Air Force, and similar imaging experiments, but in smoke environment, at Redstone Arsenal for the US Army Aviation and Missile Command (AMCOM). Wavelength of the illuminating laser was 532 nm with pulse width ranging from 6 to 12 ns and comparable gate widths. These tests have shown depth resolution in the tens of centimeters range from time phasing reflected LADAR images with MCPII shutter opening.

  16. Optical XOR gate

    DOE Patents [OSTI]

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  17. Representative Control Gates

    E-Print Network [OSTI]

    Rhoads, James

    Representative Staffing & Management Reviews & Control Gates The NASA Program/Project Life Cycle Concept C Concept/Design Evaluation Criteria ° Feasibility Assessment ° Life Cycle Cost Estimates ° Trade Requirements Establish Optimum System Design Analyze Mission Requirements Establish Optimum Architecture

  18. Advanced insulated gate bipolar transistor gate drive

    DOE Patents [OSTI]

    Short, James Evans (Monongahela, PA); West, Shawn Michael (West Mifflin, PA); Fabean, Robert J. (Donora, PA)

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  19. Compact modeling of Double-Gate MOSFETs

    E-Print Network [OSTI]

    Lu, Huaxin

    2006-01-01

    Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering," in Symposium on VLSI Technology

  20. Gate complexity using Dynamic Programming

    E-Print Network [OSTI]

    Srinivas Sridharan; Mile Gu; Matthew R. James

    2008-07-03

    The relationship between efficient quantum gate synthesis and control theory has been a topic of interest in the quantum control literature. Motivated by this work, we describe in the present article how the dynamic programming technique from optimal control may be used for the optimal synthesis of quantum circuits. We demonstrate simulation results on an example system on SU(2), to obtain plots related to the gate complexity and sample paths for different logic gates.

  1. David Gates home page

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding Low-Cost2 DOE HQSiteoC. DoranDatabaseDepartment ofGates

  2. Penn State DOE GATE Program

    SciTech Connect (OSTI)

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  3. SF Gate Home Today's News

    E-Print Network [OSTI]

    Savrasov, Sergej Y.

    SF Gate Home Today's News Sports Entertainment Technology Live Views Traffic Weather Health Clues to Behavior of Plutonium / Research may help safety of storing ... 9/5/2003file://E:\\Homepages\\SavrasovHome

  4. Trapped ion scaling with pulsed fast gates

    E-Print Network [OSTI]

    C. D. B. Bentley; A. R. R. Carvalho; J. J. Hope

    2015-07-10

    Fast entangling gates for trapped ions offer vastly improved gate operation times relative to implemented gates, as well as approaches to trap scaling. Gates on neighbouring ions only involve local ions when performed sufficiently fast, and we find that even a fast gate between distant ions with few degrees of freedom restores all the motional modes given more stringent gate speed conditions. We compare pulsed fast gate schemes, defined by a timescale faster than the trap period, and find that our proposed scheme has less stringent requirements on laser repetition rate for achieving arbitrary gate time targets and infidelities well below $10^{-4}$. By extending gate schemes to ion crystals, we explore the effect of ion number on gate fidelity for coupling neighbouring pairs of ions in large crystals. Inter-ion distance determines the gate time, and a factor of five increase in repetition rate, or correspondingly the laser power, reduces the infidelity by almost two orders of magnitude. We also apply our fast gate scheme to entangle the first and last ions in a crystal. As the number of ions in the crystal increases, significant increases in the laser power are required to provide the short gate times corresponding to fidelity above 0.99.

  5. Planning a cost-effective gate rehab

    SciTech Connect (OSTI)

    Rudolph, R.M.; Gundry, J.A. [American Society of Civil Engineers, Nashville, TN (United States)

    1996-04-01

    Hydropower project owners are devoting increasing attention to the condition and safety of spillway gates and related equipment. With careful inspection and planning, owners can develop a rehabilitation program that improves gate performance and minimizes cost. The July 1995 failure of a spillway gate at Folsom Dam has spurred increased attention on inspection and rehabilitation of gates. This article explains an approach taken by Northern States Power Company in rehabilitating aged gates at its Wisota Dam project. An update on measures being taken in response to the Folsom Dam incident is also included.

  6. Stage-Gate Innovation Management Guidelines

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    It is critical, therefore, that there is an effective pathway for innovative technology and new technical information to reach the end-user. The Stage-Gate Innovation...

  7. Towards Magneto-Logic Gates in Graphene

    E-Print Network [OSTI]

    Wen, Hua

    2014-01-01

    using graphene based spintronic logic gates. Proc. SPIE,applications using spintronic devices for logic operationa leading candidate for spintronic applications due to its

  8. Bielectron vortices in gated graphene

    E-Print Network [OSTI]

    C. A. Downing; M. E. Portnoi

    2015-06-14

    We study the formation of bound two-particle states in gapless monolayer graphene in gated structures. We find that, even in the regime of massless Dirac fermions, coupling can occur at zero-energy for different or same charge quasiparticles. These bipartite states must have a non-zero internal angular momentum, meaning that they only exist as stationary vortices. We propose a new picture of the experimentally seen Fermi velocity renormalization as a manifestation of these pairs, suggest the possibility of a condensate of these novel quasiparticles.

  9. Gate Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavy ElectricalsFTL SolarGate Solar Jump to: navigation, search Name:

  10. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    SciTech Connect (OSTI)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  11. Asynchronous Balanced Gates Tolerant to Interconnect Variability

    E-Print Network [OSTI]

    Karpovsky, Mark

    values and transitions to ensure that it does not produce a data-dependent power signature which can switching at the output of the gate. However, in the existing designs the data-independent power consumption and the unavoidable variation due to manufacture. We present gate designs which have data-independent power

  12. High Performance Electrolyte Gated Carbon Nanotube Transistors

    E-Print Network [OSTI]

    Gore, Jeff

    High Performance Electrolyte Gated Carbon Nanotube Transistors Sami Rosenblatt, Yuval Yaish, Jiwoong Park,, Jeff Gore, Vera Sazonova, and Paul L. McEuen*, Laboratory of Atomic and Solid State Physics to grow the tubes, annealing to improve the contacts, and an electrolyte as a gate, we obtain very high

  13. Retaining latch for a water pit gate

    DOE Patents [OSTI]

    Beale, A.R.

    1997-11-18

    A retaining latch is described for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame. 4 figs.

  14. Unbalanced edge modes and topological phase transition in gated...

    Office of Scientific and Technical Information (OSTI)

    Unbalanced edge modes and topological phase transition in gated trilayer graphene Prev Next Title: Unbalanced edge modes and topological phase transition in gated trilayer...

  15. Vehicle Technologies Office Merit Review 2015: Gate Driver Optimizatio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Gate Driver Optimization for WBG Applications Vehicle Technologies Office Merit Review 2015: Gate Driver Optimization for WBG Applications Presentation given by Oak Ridge National...

  16. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR 2009 DOE Hydrogen Program and...

  17. University of Illinois at Urbana-Champaign's GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion...

  18. Gate-tunable exchange coupling between cobalt clusters on graphene...

    Office of Scientific and Technical Information (OSTI)

    Accepted Manuscript: Gate-tunable exchange coupling between cobalt clusters on graphene Title: Gate-tunable exchange coupling between cobalt clusters on graphene Authors:...

  19. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Energy Savers [EERE]

    MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate...

  20. Gating of Permanent Molds for ALuminum Casting

    SciTech Connect (OSTI)

    David Schwam; John F. Wallace; Tom Engle; Qingming Chang

    2004-03-30

    This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

  1. Ancilla-Assisted Discrimination of Quantum Gates

    E-Print Network [OSTI]

    Jianxin Chen; Mingsheng Ying

    2008-09-02

    The intrinsic idea of superdense coding is to find as many gates as possible such that they can be perfectly discriminated. In this paper, we consider a new scheme of discrimination of quantum gates, called ancilla-assisted discrimination, in which a set of quantum gates on a $d-$dimensional system are perfectly discriminated with assistance from an $r-$dimensional ancilla system. The main contribution of the present paper is two-fold: (1) The number of quantum gates that can be discriminated in this scheme is evaluated. We prove that any $rd+1$ quantum gates cannot be perfectly discriminated with assistance from the ancilla, and there exist $rd$ quantum gates which can be perfectly discriminated with assistance from the ancilla. (2) The dimensionality of the minimal ancilla system is estimated. We prove that there exists a constant positive number $c$ such that for any $k\\leq cr$ quantum gates, if they are $d$-assisted discriminable, then they are also $r$-assisted discriminable, and there are $c^{\\prime}r\\textrm{}(c^{\\prime}>c)$ different quantum gates which can be discriminated with a $d-$dimensional ancilla, but they cannot be discriminated if the ancilla is reduced to an $r-$dimensional system. Thus, the order $O(r)$ of the number of quantum gates that can be discriminated with assistance from an $r-$dimensional ancilla is optimal. The results reported in this paper represent a preliminary step toward understanding the role ancilla system plays in discrimination of quantum gates as well as the power and limit of superdense coding.

  2. Range gating experiments through a scattering media

    SciTech Connect (OSTI)

    Payton, J.; Cverna, F.; Gallegos, R.; McDonald, T.; Numkena, D.; Obst, A.; Pena-Abeyta, C.; Yates, G.

    1998-12-31

    This paper discusses range-gated imaging experiments performed recently at Redstone Arsenal in Huntsville, Alabama. Range gating is an imaging technique that uses a pulsed laser and gated camera to image objects at specific ranges. The technique can be used for imaging through scattering media such as dense smoke or fog. Range gating uses the fact that light travels at 3 x 10{sup 8} m/s. Knowing the speed of light the authors can calculate the time it will take the laser light to travel a known distance, then gate open a Micro Channel Plate Image Intensifier (MCPII) at the time the reflected light returns from the target. In the Redstone experiment the gate width on the MCPII was set to equal the laser pulse width ({approximately} 8 ns) for the highest signal to noise ratio. The gate allows the light reflected form the target and a small portion of the light reflected from the smoke in the vicinity of the target to be imaged. They obtained good results in light and medium smoke but the laser they were used did not have sufficient intensity to penetrate the thickest smoke. They did not diverge the laser beam to cover the entire target in order to maintain a high flux that would achieve better penetration through the smoke. They were able to image an Armored Personnel Carrier (APC) through light and medium smoke but they were not able to image the APC through heavy smoke. The experiment and results are presented.

  3. Analog Noise Reduction in Enzymatic Logic Gates

    E-Print Network [OSTI]

    Dmitriy Melnikov; Guinevere Strack; Marcos Pita; Vladimir Privman; Evgeny Katz

    2009-05-17

    In this work we demonstrate both experimentally and theoretically that the analog noise generation by a single enzymatic logic gate can be dramatically reduced to yield gate operation with virtually no input noise amplification. This is achieved by exploiting the enzyme's specificity when using a co-substrate that has a much lower affinity than the primary substrate. Under these conditions, we obtain a negligible increase in the noise output from the logic gate as compared to the input noise level. Experimental realizations of the AND logic gate with the enzyme horseradish peroxidase using hydrogen peroxide and two different co-substrates, 2,2'-azino-bis(3-ethylbenzthiazoline-6-sulphonic acid) (ABTS) and ferrocyanide, with vastly different rate constants confirmed our general theoretical conclusions.

  4. High level compilation for gate reconfigurable architectures

    E-Print Network [OSTI]

    Babb, Jonathan William

    2001-01-01

    A continuing exponential increase in the number of programmable elements is turning management of gate-reconfigurable architectures as "glue logic" into an intractable problem; it is past time to raise this abstraction ...

  5. Digital gate pulse generator for cycloconverter control

    DOE Patents [OSTI]

    Klein, Frederick F. (Monroeville, PA); Mutone, Gioacchino A. (Pleasant Hills, PA)

    1989-01-01

    The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

  6. Gate fidelity fluctuations and quantum process invariants

    SciTech Connect (OSTI)

    Magesan, Easwar; Emerson, Joseph [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Blume-Kohout, Robin [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2011-07-15

    We characterize the quantum gate fidelity in a state-independent manner by giving an explicit expression for its variance. The method we provide can be extended to calculate all higher order moments of the gate fidelity. Using these results, we obtain a simple expression for the variance of a single-qubit system and deduce the asymptotic behavior for large-dimensional quantum systems. Applications of these results to quantum chaos and randomized benchmarking are discussed.

  7. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  8. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1996-01-01

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance.

  9. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, T.E.

    1996-12-03

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.

  10. Gate dielectric development for flexible electronics

    SciTech Connect (OSTI)

    Joshi, P. C.; Voutsas, A. T.; Hartzell, J. W. [LCD Process Technology Laboratories, SHARP Laboratories of America, Inc., 5700 NW Pacific Rim Blvd., Camas, Washington 98607 (United States)

    2007-07-15

    Thin film transistors integrated on flexible substrates are becoming increasingly attractive for low cost displays, sensors, and rf communication applications. The successful development of the flexible devices will be dictated by the enhancement in the thermal stability of the substrates and the low temperature (<300 deg. C) processing of the gate dielectric. The plasma-enhanced chemical-vapor deposition (PECVD) technique has successfully met the demands of the gate dielectric for display devices at processing temperatures lower than 600 deg. C. However, a further reduction in the processing temperatures below 300 deg. C is essential to realize low cost, highly functional devices on flexible substrates. The low temperature processing of gate dielectric films necessitates the development of processes and techniques with plasma controlled reaction kinetics dominating the thin film growth rather than the thermal state of the substrate. In the present work, the authors report on the processing of high quality gate dielectric films by high density PECVD technique at process temperatures lower than 300 deg. C. The bulk and interfacial electrical quality and reliability of the metal-oxide-semiconductor capacitors as a function of process temperature are discussed in this article. A comparison with the high temperature gate oxide films deposited by PECVD technique employing capacitively coupled plasma source has been made to establish the film quality and reliability. The films processed at low temperatures have shown good electrical performance and reliability as evaluated in terms of the leakage current, flatband voltage, midgap interface trap concentration, and bias temperature stress reliability characteristics.

  11. Gates, Oregon: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable UrbanKentucky: Energy ResourcesMaui Area (DOEMaui AreaGastonGatesGates,

  12. Characterization and production metrology of thin transistor gate oxide lms

    E-Print Network [OSTI]

    Garfunkel, Eric

    Review Characterization and production metrology of thin transistor gate oxide ®lms Alain C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 4. XRR and NR characterization of thin oxide ®lms . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5.2. Optical models of thin gate ®lms

  13. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 range (1-2...

  14. Compact modeling of quantum effects in double gate MOSFETs

    E-Print Network [OSTI]

    Wang, Wei

    2007-01-01

    However, ultrathin gate oxide will lead to high gate leakagethe high enough oxide barrier confinement leads to zero waveoxide becomes significant. The random dopant fluctuation effects increase with shrinking device size and leads

  15. Electroluminescence in ion gel gated organic polymer semiconductor transistors

    E-Print Network [OSTI]

    Bhat, Shrivalli

    2011-07-12

    This thesis reports the light emission in ion gel gated, thin film organic semiconductor transistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit...

  16. On the Query Complexity of Perfect Gate Discrimination

    E-Print Network [OSTI]

    D'Ariano, Giacomo Mauro

    On the Query Complexity of Perfect Gate Discrimination Giulio Chiribella1 , Giacomo Mauro D'Ariano2 both deterministic strategies. For unambiguous gate discrimination, where errors are not tolerated that there is no difference between perfect probabilistic and perfect determin- istic gate discrimination. Hence, evaluating

  17. Tamper Resilient Circuits: The Adversary at the Gates Aggelos Kiayias

    E-Print Network [OSTI]

    International Association for Cryptologic Research (IACR)

    Tamper Resilient Circuits: The Adversary at the Gates Aggelos Kiayias Yiannis Tselekounis Abstract We initiate the investigation of gate-tampering attacks against cryptographic circuits. Our model is motivated by the plausibility of tampering directly with circuit gates and by the increasing use of tamper

  18. Cavity-QED-based quantum phase gate 

    E-Print Network [OSTI]

    Zubairy, M. Suhail; Kim, M.; Scully, Marlan O.

    2003-01-01

    appropriately detuned from the other mode of the cavit photon each in the two modes and the atom is initially gate in such a system and discuss potential applications DOI: 10.1103/PhysRevA.68.033820 PAC I. INTRODUCTION Quantum computing @1# employs...

  19. Yuanmingyuan East Gate of Peking University

    E-Print Network [OSTI]

    Gu, Jin

    and New Energy Technology 32 Institute of Education Schools & Departments A Foreign Student AffairsRoad) MingdeRoad (XinminRoad) (XuetangRoad) (Zhishan Road) (Tsinghua Road) (XichunRoad) Car Zhaolanyuan Shopping Area West Gate New Qinghuaxuetang #12;

  20. Method for voltage-gated protein fractionation

    DOE Patents [OSTI]

    Hatch, Anson (Tracy, CA); Singh, Anup K. (Danville, CA)

    2012-04-24

    We report unique findings on the voltage dependence of protein exclusion from the pores of nanoporous polymer exclusion membranes. The pores are small enough that proteins are excluded from passage with low applied electric fields, but increasing the field enables proteins to pass through. The requisite field necessary for a change in exclusion is protein-specific with a correlation to protein size. The field-dependence of exclusion is important to consider for preconcentration applications. The ability to selectively gate proteins at exclusion membranes is also a promising means for manipulating and characterizing proteins. We show that field-gated exclusion can be used to selectively remove proteins from a mixture, or to selectively trap protein at one exclusion membrane in a series.

  1. Cluster computing software for GATE simulations

    SciTech Connect (OSTI)

    Beenhouwer, Jan de; Staelens, Steven; Kruecker, Dirk; Ferrer, Ludovic; D'Asseler, Yves; Lemahieu, Ignace; Rannou, Fernando R.

    2007-06-15

    Geometry and tracking (GEANT4) is a Monte Carlo package designed for high energy physics experiments. It is used as the basis layer for Monte Carlo simulations of nuclear medicine acquisition systems in GEANT4 Application for Tomographic Emission (GATE). GATE allows the user to realistically model experiments using accurate physics models and time synchronization for detector movement through a script language contained in a macro file. The downside of this high accuracy is long computation time. This paper describes a platform independent computing approach for running GATE simulations on a cluster of computers in order to reduce the overall simulation time. Our software automatically creates fully resolved, nonparametrized macros accompanied with an on-the-fly generated cluster specific submit file used to launch the simulations. The scalability of GATE simulations on a cluster is investigated for two imaging modalities, positron emission tomography (PET) and single photon emission computed tomography (SPECT). Due to a higher sensitivity, PET simulations are characterized by relatively high data output rates that create rather large output files. SPECT simulations, on the other hand, have lower data output rates but require a long collimator setup time. Both of these characteristics hamper scalability as a function of the number of CPUs. The scalability of PET simulations is improved here by the development of a fast output merger. The scalability of SPECT simulations is improved by greatly reducing the collimator setup time. Accordingly, these two new developments result in higher scalability for both PET and SPECT simulations and reduce the computation time to more practical values.

  2. Transport quantum logic gates for trapped ions

    E-Print Network [OSTI]

    D. Leibfried; E. Knill; C. Ospelkaus; D. J. Wineland

    2007-08-28

    Many efforts are currently underway to build a device capable of large scale quantum information processing (QIP). Whereas QIP has been demonstrated for a few qubits in several systems, many technical difficulties must be overcome in order to construct a large-scale device. In one proposal for large-scale QIP, trapped ions are manipulated by precisely controlled light pulses and moved through and stored in multizone trap arrays. The technical overhead necessary to precisely control both the ion geometrical configurations and the laser interactions is demanding. Here we propose methods that significantly reduce the overhead on laser beam control for performing single and multiple qubit operations on trapped ions. We show how a universal set of operations can be implemented by controlled transport of ions through stationary laser beams. At the same time, each laser beam can be used to perform many operations in parallel, potentially reducing the total laser power necessary to carry out QIP tasks. The overall setup necessary for implementing transport gates is simpler than for gates executed on stationary ions. We also suggest a transport-based two-qubit gate scheme utilizing microfabricated permanent magnets that can be executed without laser light.

  3. Sharav Sluices Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc JumpHeter Battery Technology Co Ltd JumpInformationSJMERI |

  4. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of GATE fellows * Partners - none Milestones Goals and Objectives * Provide graduate curriculum focused on high-power in- vehicle energy storage for hybrid electric and fuel cell...

  5. Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene

    E-Print Network [OSTI]

    Zhang, Yuanbo

    2010-01-01

    Tunable Bandgap in Bilayer Graphene Yuanbo Zhang* 1 , Tsung-gate-tunable bandgap in graphene bilayers with magnitude asbands. In two- dimensional graphene bilayers this bandgap

  6. Fast gates for ion traps by splitting laser pulses

    E-Print Network [OSTI]

    C. D. B. Bentley; A. R. R. Carvalho; D. Kielpinski; J. J. Hope

    2013-04-09

    We present a fast phase gate scheme that is experimentally achievable and has an operation time more than two orders of magnitude faster than current experimental schemes for low numbers of pulses. The gate time improves with the number of pulses following an inverse power law. Unlike implemented schemes which excite precise motional sidebands, thus limiting the gate timescale, our scheme excites multiple motional states using discrete ultra-fast pulses. We use beam-splitters to divide pulses into smaller components to overcome limitations due to the finite laser pulse repetition rate. This provides gate times faster than proposed theoretical schemes when we optimise a practical setup.

  7. Gating-by-tilt of mechanosensitive membrane channels

    E-Print Network [OSTI]

    Matthew S. Turner; Pierre Sens

    2003-11-25

    We propose an alternative mechanism for the gating of biological membrane channels in response to membrane tension that involves a change in the slope of the membrane near the channel. Under biological membrane tensions we show that the energy difference between the closed (tilted) and open (untilted) states can far exceed kBT and is comparable to what is available under simple ilational gating. Recent experiments demonstrate that membrane leaflet asymmetries (spontaneous curvature) can strong effect the gating of some channels. Such a phenomenon would be more easy to explain under gating-by-tilt, given its novel intrinsic sensitivity to such asymmetry.

  8. The Difficulty of Gate Control in Molecular Transistors

    E-Print Network [OSTI]

    D. Hou; J. H. Wei

    2011-09-27

    The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi energy they can be linearly shifted by the gate voltage, which is consistent with recent experimental observations [Nature 462, 1039 (2009)]. However, when they move near to the Fermi energy (turn-on process), the shifts become extremely small and almost independent of the gate voltage. The fact that the conductance may be beyond the gate control in the "ON" state will challenge the implementation of molecular transistors.

  9. Penn State DOE Graduate Automotive Technology Education (Gate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Penn State DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems Penn State DOE Graduate Automotive Technology Education...

  10. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Energy Savers [EERE]

    PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah...

  11. Speed control system for an access gate

    DOE Patents [OSTI]

    Bzorgi, Fariborz M. (Knoxville, TN)

    2012-03-20

    An access control apparatus for an access gate. The access gate typically has a rotator that is configured to rotate around a rotator axis at a first variable speed in a forward direction. The access control apparatus may include a transmission that typically has an input element that is operatively connected to the rotator. The input element is generally configured to rotate at an input speed that is proportional to the first variable speed. The transmission typically also has an output element that has an output speed that is higher than the input speed. The input element and the output element may rotate around a common transmission axis. A retardation mechanism may be employed. The retardation mechanism is typically configured to rotate around a retardation mechanism axis. Generally the retardation mechanism is operatively connected to the output element of the transmission and is configured to retard motion of the access gate in the forward direction when the first variable speed is above a control-limit speed. In many embodiments the transmission axis and the retardation mechanism axis are substantially co-axial. Some embodiments include a freewheel/catch mechanism that has an input connection that is operatively connected to the rotator. The input connection may be configured to engage an output connection when the rotator is rotated at the first variable speed in a forward direction and configured for substantially unrestricted rotation when the rotator is rotated in a reverse direction opposite the forward direction. The input element of the transmission is typically operatively connected to the output connection of the freewheel/catch mechanism.

  12. Optimizing local protocols implementing nonlocal quantum gates

    E-Print Network [OSTI]

    Scott M. Cohen

    2010-02-02

    We present a method of optimizing recently designed protocols for implementing an arbitrary nonlocal unitary gate acting on a bipartite system. These protocols use only local operations and classical communication with the assistance of entanglement, and are deterministic while also being "one-shot", in that they use only one copy of an entangled resource state. The optimization is in the sense of minimizing the amount of entanglement used, and it is often the case that less entanglement is needed than with an alternative protocol using two-way teleportation.

  13. Poly-Si?â??xGex Film Growth for Ni Germanosilicided Metal Gate

    E-Print Network [OSTI]

    Yu, Hongpeng

    Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 ...

  14. Modeling gated neutron images of THD capsules

    SciTech Connect (OSTI)

    Wilson, Douglas Carl; Grim, Gary P; Tregillis, Ian L; Wilke, Mark D; Morgan, George L; Loomis, Eric N; Wilde, Carl H; Oertel, John A; Fatherley, Valerie E; Clark, David D; Schmitt, Mark J; Merrill, Frank E; Wang, Tai - Sen F; Danly, Christopher R; Batha, Steven H; Patel, M; Sepke, S; Hatarik, R; Fittinghoff, D; Bower, D; Marinak, M; Munro, D; Moran, M; Hilko, R; Frank, M; Buckles, R

    2010-01-01

    Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

  15. Nonvolatile memory disturbs due to gate and junction leakage currents

    E-Print Network [OSTI]

    Schroder, Dieter K.

    leakage currents induced by stress due to LOCOS and trap- assisted tunneling (TAT). * Corresponding author Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State) from traps within the gate oxides. Such low gate leakage currents can lead to sufficient charge

  16. University of Illinois at Urbana-Champaigns GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion...

  17. US DOE Sponsored Graduate Automotive Technology Education (GATE) Program at Penn State Emphasizing

    E-Print Network [OSTI]

    Lee, Dongwon

    US DOE Sponsored Graduate Automotive Technology Education (GATE) Program at Penn State Emphasizing in the automotive industry and academia. Develop relationships between GATE students, faculty, employers

  18. New SRAM Cell Design for Low Power and High Reliability using 32nm Independent Gate FinFET Technology

    E-Print Network [OSTI]

    Ayers, Joseph

    gate voltage (VGb). This is similar to the body effect in a bulk transistor. An independent-gate Fin

  19. Demonstration of Robust Quantum Gate Tomography via Randomized Benchmarking

    E-Print Network [OSTI]

    Blake R. Johnson; Marcus P. da Silva; Colm A. Ryan; Shelby Kimmel; Jerry M. Chow; Thomas A. Ohki

    2015-05-25

    Typical quantum gate tomography protocols struggle with a self-consistency problem: the gate operation cannot be reconstructed without knowledge of the initial state and final measurement, but such knowledge cannot be obtained without well-characterized gates. A recently proposed technique, known as randomized benchmarking tomography (RBT), sidesteps this self-consistency problem by designing experiments to be insensitive to preparation and measurement imperfections. We implement this proposal in a superconducting qubit system, using a number of experimental improvements including implementing each of the elements of the Clifford group in single `atomic' pulses and custom control hardware to enable large overhead protocols. We show a robust reconstruction of several single-qubit quantum gates, including a unitary outside the Clifford group. We demonstrate that RBT yields physical gate reconstructions that are consistent with fidelities obtained by randomized benchmarking.

  20. Parallel transport quantum logic gates with trapped ions

    E-Print Network [OSTI]

    de Clercq, Ludwig; Marinelli, Matteo; Nadlinger, David; Oswald, Robin; Negnevitsky, Vlad; Kienzler, Daniel; Keitch, Ben; Home, Jonathan P

    2015-01-01

    Quantum information processing will require combinations of gate operations and communication, with each applied in parallel to large numbers of quantum systems. These tasks are often performed sequentially, with gates implemented by pulsed fields and information transported either by moving the physical qubits or using photonic links. For trapped ions, an alternative approach is to implement quantum logic gates by transporting the ions through static laser beams, combining qubit operations with transport. This has significant advantages for scalability since the voltage waveforms required for transport can potentially be generated using micro-electronics integrated into the trap structure itself, while both optical and microwave control elements are significantly more bulky. Using a multi-zone ion trap, we demonstrate transport gates on a qubit encoded in the hyperfine structure of a beryllium ion. We show the ability to perform sequences of operations, and to perform parallel gates on two ions transported t...

  1. Graphene terahertz modulators by ionic liquid gating

    E-Print Network [OSTI]

    Wu, Yang; Qiu, Xuepeng; Liu, Jingbo; Deorani, Praveen; Banerjee, Karan; Son, Jaesung; Chen, Yuanfu; Chia, Elbert E M; Yang, Hyunsoo

    2015-01-01

    Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz transmittance. It is found that, in the THz range, both the absorbance and reflectance of the device increase proportionately to the available density of states due to intraband transitions. Compact, stable, and repeatable THz transmittance modulation up to 93% (or 99%) for a single (or stacked) device has been demonstrated in a broad frequency range from 0.1 to 2.5 THz, with an applied voltage of only 3 V at room temperature.

  2. Gated Si nanowires for large thermoelectric power factors

    SciTech Connect (OSTI)

    Neophytou, Neophytos, E-mail: N.Neophytou@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Kosina, Hans [Institute for Microelectronics, Vienna University of Technology, Gusshausstrasse 27-29/E360, Vienna A-1040 (Austria)

    2014-08-18

    We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si nanowires (NWs) of up to 20?nm in diameter in the [100], [110], and [111] crystallographic transport orientations. We use atomistic tight-binding simulations for the calculation of the NW electronic structure, coupled to linearized Boltzmann transport equation for the calculation of the thermoelectric coefficients. We show that gated NW structures can provide ?5× larger thermoelectric power factor compared to doped channels, attributed to their high hole phonon-limited mobility, as well as gating induced bandstructure modifications which further improve mobility. Despite the fact that gating shifts the charge carriers near the NW surface, surface roughness scattering is not strong enough to degrade the transport properties of the accumulated hole layer. The highest power factor is achieved for the [111] NW, followed by the [110], and finally by the [100] NW. As the NW diameter increases, the advantage of the gated channel is reduced. We show, however, that even at 20?nm diameters (the largest ones that we were able to simulate), a ?3× higher power factor for gated channels is observed. Our simulations suggest that the advantage of gating could still be present in NWs with diameters of up to ?40?nm.

  3. Variability-Aware Design of Double Gate FinFET-based Current Mirrors

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    = front gate voltage, Vgb= back gate voltage. In the SG mode, the front and back gates are tied together and the back-gate voltage (Vgb) is set to 0 V. The low-power (LP)-mode applies a reverse-bias voltage of -0.2V

  4. Micro-mechanical logic for field produceable gate arrays

    E-Print Network [OSTI]

    Prakash, Manu

    2005-01-01

    A paradigm of micro-mechanical gates for field produceable logic is explored. A desktop manufacturing system is sought after which is capable of printing functional logic devices in the field. A logic scheme which induces ...

  5. Constructing two-qubit gates with minimal couplings

    E-Print Network [OSTI]

    Yuan, Haidong

    Couplings between quantum systems are frequently less robust and harder to implement than controls on individual systems; thus, constructing quantum gates with minimal interactions is an important problem in quantum ...

  6. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    using this beamline were able to chart the rate of oxidation of silicon in the gate oxide layer for the first time. Understanding the rate of oxidation in this crucial layer...

  7. Gate-Level Characterization: Foundations and Hardware Security Applications

    E-Print Network [OSTI]

    Potkonjak, Miodrag

    Security Keywords Gate-level characterization, thermal conditioning, hardware Trojan horse, manufacturing leakage energy, ever increasing sub- strate noise, profound and intrinsic manufacturing variabil- ity (MV rights management. However, GLC is challenging due to the existence of manufacturing variability (MV

  8. Quantum optical interface for gate-controlled spintronic devices

    E-Print Network [OSTI]

    Hans-Andreas Engel; Jacob M. Taylor; Mikhail D. Lukin; Atac Imamoglu

    2006-12-29

    We describe an opto-electronic structure in which charge and spin degrees of freedom in electrical gate-defined quantum dots can be coherently coupled to light. This is achieved via electron-electron interaction or via electron tunneling into a proximal self-assembled quantum dot. We illustrate potential applications of this approach by considering several quantum control techniques, including optical read-out of gate-controlled semiconductor quantum bits and controlled generation of entangled photon-spin pairs.

  9. Optimal Control Theory for Continuous Variable Quantum Gates

    E-Print Network [OSTI]

    Rebing Wu; Raj Chakrabarti; Herschel Rabitz

    2007-08-16

    We apply the methodology of optimal control theory to the problem of implementing quantum gates in continuous variable systems with quadratic Hamiltonians. We demonstrate that it is possible to define a fidelity measure for continuous variable (CV) gate optimization that is devoid of traps, such that the search for optimal control fields using local algorithms will not be hindered. The optimal control of several quantum computing gates, as well as that of algorithms composed of these primitives, is investigated using several typical physical models and compared for discrete and continuous quantum systems. Numerical simulations indicate that the optimization of generic CV quantum gates is inherently more expensive than that of generic discrete variable quantum gates, and that the exact-time controllability of CV systems plays an important role in determining the maximum achievable gate fidelity. The resulting optimal control fields typically display more complicated Fourier spectra that suggest a richer variety of possible control mechanisms. Moreover, the ability to control interactions between qunits is important for delimiting the total control fluence. The comparative ability of current experimental protocols to implement such time-dependent controls may help determine which physical incarnations of CV quantum information processing will be the easiest to implement with optimal fidelity.

  10. Filter design for hybrid spin gates

    E-Print Network [OSTI]

    Andreas Albrecht; Martin B. Plenio

    2015-04-14

    The impact of control sequences on the environmental coupling of a quantum system can be described in terms of a filter. Here we analyze how the coherent evolution of two interacting spins subject to periodic control pulses, at the example of a nitrogen vacancy center coupled to a nuclear spin, can be described in the filter framework in both the weak and the strong coupling limit. A universal functional dependence around the filter resonances then allows for tuning the coupling type and strength. Originally limited to small rotation angles, we show how the validity range of the filter description can be extended to the long time limit by time-sliced evolution sequences. Based on that insight, the construction of tunable, noise decoupled, conditional gates composed of alternating pulse sequences is proposed. In particular such an approach can lead to a significant improvement in fidelity as compared to a strictly periodic control sequence. Moreover we analyze the decoherence impact, the relation to the filter for classical noise known from dynamical decoupling sequences, and we outline how an alternating sequence can improve spin sensing protocols.

  11. Gated integrator with signal baseline subtraction

    DOE Patents [OSTI]

    Wang, X.

    1996-12-17

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window. 5 figs.

  12. Gated integrator with signal baseline subtraction

    DOE Patents [OSTI]

    Wang, Xucheng (Lisle, IL)

    1996-01-01

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window.

  13. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-09-08

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling. 25 figs.

  14. The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area 

    E-Print Network [OSTI]

    Kim, Suk Kyung

    2006-10-30

    The primary purpose of the study is to explore the connections between residents' perception of safety and their crime experience, and the existence of gates and fences in multi-family housing communities in urban areas. ...

  15. Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode W. P. Bai*, N. Lu*, J. Liu*, A. Ramirez**, D. L. Kwong*, D. Wristers**, A. Ritenour#

    E-Print Network [OSTI]

    Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode W. P. Bai*, N. Lu*, J, we report for the first time Ge MOS characteristics with ultra thin rapid thermal CVD HfO2 gate dielectrics and TaN gate electrode. Using the newly developed pre- gate cleaning and NH3-based Ge surface

  16. Deterministic and cascadable conditional phase gate for photonic qubits

    SciTech Connect (OSTI)

    Chudzicki, Christopher; Chuang, Isaac; Shapiro, Jeffrey H.

    2014-12-04

    Previous analyses of conditional ?{sub NL}-phase gates for photonic qubits that treat crossphase modulation (XPM) in a causal, multimode, quantum field setting suggest that a large (?? rad) nonlinear phase shift is always accompanied by fidelity-degrading noise [J. H. Shapiro, Phys. Rev. A 73, 062305 (2006); J. Gea-Banacloche, Phys. Rev. A 81, 043823 (2010)]. Using an atomic V-system to model an XPM medium, we present a conditional phase gate that, for sufficiently small nonzero ?{sub NL}, has high fidelity. The gate is made cascadable by using a special measurement, principal mode projection, to exploit the quantum Zeno effect and preclude the accumulation of fidelity-degrading departures from the principal-mode Hilbert space when both control and target photons illuminate the gate. The nonlinearity of the V-system we study is too weak for this particular implementation to be practical. Nevertheless, the idea of cascading through principal mode projection is of potential use to overcome fidelity degrading noise for a wide variety of nonlinear optical primitive gates.

  17. Decoherence and gate performance of coupled solid state qubits

    E-Print Network [OSTI]

    Markus J. Storcz; Frank K. Wilhelm

    2002-12-16

    Solid state quantum bits are promising candidates for the realization of a {\\em scalable} quantum computer. However, they are usually strongly limited by decoherence due to the many extra degrees of freedom of a solid state system. We investigate a system of two solid state qubits that are coupled via $\\sigma_z^{(i)} \\otimes \\sigma_z^{(j)}$ type of coupling. This kind of setup is typical for {\\em pseudospin} solid-state quantum bits such as charge or flux systems. We evaluate decoherence properties and gate quality factors in the presence of a common and two uncorrelated baths coupling to $\\sigma_z$, respectively. We show that at low temperatures, uncorrelated baths do degrade the gate quality more severely. In particular, we show that in the case of a common bath, optimum gate performance of a CPHASE gate can be reached at very low temperatures, because our type of coupling commutes with the coupling to the decoherence, which makes this type of coupling attractive as compared to previously studied proposals with $\\sigma_y^{(i)} \\otimes \\sigma_y^{(j)}$ -coupling. Although less pronounced, this advantage also applies to the CNOT gate.

  18. An optical fusion gate for W-states

    E-Print Network [OSTI]

    Sahin Kaya Ozdemir; Eiji Matsunaga; Toshiyuki Tashima; Takashi Yamamoto; Masato Koashi; Nobuyuki Imoto

    2011-03-11

    We introduce a simple optical gate to fuse arbitrary size polarization entangled W-states to prepare larger W-states. The gate requires a polarizing beam splitter (PBS), a half wave plate (HWP) and two photon detectors. We study numerically and analytically the necessary resource consumption for preparing larger W-states by fusing smaller ones with the proposed fusion gate. We show analytically that resource requirement scales at most sub-exponentially with the increasing size of the state to be prepared. We numerically determine the resource cost for fusion without recycling where W-states of arbitrary size can be optimally prepared. Moreover, we introduce another strategy which is based on recycling and outperforms the optimal strategy for non-recycling case.

  19. Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode 

    E-Print Network [OSTI]

    Kinard, William Brian

    1989-01-01

    , . ' 'CONTACT PAD' PLANAR I ZED POLYAM I DE RECTIFYI CONTACT N DBHS Pig. 2. f'utavvay vieiv of a gated gallium arsenide heterostructure resonant tunneling diode 1018 graded from 10 18 io" 10? (lightly doped) units=cm 8 ?graded from 10 to 18...FABRICATION OF A GATED GALLIL". tl ARSEXIDE HETEROSTRL CTL RF. RESONANT TF'XXELI'XG DIODE A Thesis bt ttrILLIAAI BRIA'. s KI'iARD Subnut ted to the Office of Graduate Studies of Texas AE;M Eniverstty tn partial fulfillment of the requirements...

  20. Self-aligned submicron gate length gallium arsenide MESFET 

    E-Print Network [OSTI]

    Huang, Hsien-Ching

    1987-01-01

    38 21. Proximity cap annealing . 22. Temperature profile of post implant anneal 46 47 23. 24. 25. 26. 27. 28. 29. 30. "Pits" or holes in GaAs post implant anneal without sacrificial cap Silicon monoxide source (bafile box) used.... 16(b)). The bottom resist layer is then further etched in the oxygen plasma to produce undercutting for the desire gate structure. The amount of undercut is determined by the desired length of the gate and is the width of the remaining resist...

  1. Isolated-attosecond-pulse generation with infrared double optical gating

    SciTech Connect (OSTI)

    Lan Pengfei; Takahashi, Eiji J.; Midorikawa, Katsumi [Extreme Photonics Research Group, RIKEN Advanced Science Institute, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan)

    2011-06-15

    We propose and theoretically demonstrate an infrared two-color polarization gating scheme for generating an intense isolated attosecond pulse (IAP) in the multicycle regime. Our simulations show that an IAP can be produced using a multicycle two-color driving pulse with a duration up to 60 fs. Moreover, the carrier-envelope phase (CEP) of the driving laser is not required to be stabilized, although the IAP intensity changes with the CEP slip. Such a gating scheme significantly relaxes the requirements for driving lasers and opens the door to easily create intense IAPs with a high-power conventional multicycle laser pulse.

  2. Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques

    E-Print Network [OSTI]

    Hashemi, Pouya

    2010-01-01

    Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture ...

  3. Quantum entanglement and controlled logical gates using coupled SQUID flux qubits

    E-Print Network [OSTI]

    Zhou, Zhongyuan; Han, Siyuan; Chu, Shih-I

    2005-06-01

    We present an approach to realize universal two-bit quantum gates using two SQUID flux qubits. In this approach the basic unit consists of two inductively coupled SQUIDs with realistic device parameters. Quantum logical gates are implemented...

  4. The civic forum in ancient Israel : the form, function, and symbolism of city gates

    E-Print Network [OSTI]

    Frese, Daniel Allan

    2012-01-01

    from the massive amounts of wood ash and burnt ceiling beamsand the presence of wood ash in some gate passages,

  5. Chemical Wave Logic Gates Oliver Steinbock, Petteri Kettunen, and Kenneth Showalter*

    E-Print Network [OSTI]

    Showalter, Kenneth

    Chemical Wave Logic Gates Oliver Steinbock, Petteri Kettunen, and Kenneth Showalter* Department Form: August 6, 1996X Logic gates based on chemical wave propagation in geometrically constrained. Computational studies of the serial coupling of elements to form multicomponent gates and general chemical wave

  6. PHYSICAL REVIEW B 90, 144504 (2014) Compressed sensing quantum process tomography for superconducting quantum gates

    E-Print Network [OSTI]

    Martinis, John M.

    2014-01-01

    for superconducting quantum gates Andrey V. Rodionov,1 Andrzej Veitia,1 R. Barends,2 J. Kelly,2 Daniel Sank,2 J quantum gates based on superconducting Xmon and phase qubits. Using experimental data for a two and Monte Carlo process certification have been demonstrated experimentally for superconducting qubit gates

  7. Tradeoffs between Gate Oxide Leakage and Delay for Dual ToxToxTox Circuits

    E-Print Network [OSTI]

    Sapatnekar, Sachin

    lead to gate oxide leakage current (Igate), are coming into play from the 90nm node onwards. AccordingTradeoffs between Gate Oxide Leakage and Delay for Dual ToxToxTox Circuits Anup Kumar Sultania Department of ECE University of Minnesota Minneapolis, MN 55455. sachin@ece.umn.edu ABSTRACT Gate oxide

  8. PHYSICAL REVIEW A 87, 052306 (2013) Protected gates for superconducting qubits

    E-Print Network [OSTI]

    Preskill, John

    2013-01-01

    PHYSICAL REVIEW A 87, 052306 (2013) Protected gates for superconducting qubits Peter Brooks, Alexei the accuracy of quantum phase gates acting on "0- qubits" in superconducting circuits, where the gates superconducting circuits for this purpose. Specifically, several authors [3­5] have proposed designs

  9. Case Studies on Clock Gating and Local Routign for VLSI Clock Mesh 

    E-Print Network [OSTI]

    Ramakrishnan, Sundararajan

    2010-10-12

    . This thesis deals with the introduction of 'reconfigurability' by using control structures like transmission gates between sub-clock meshes, thus enabling clock gating in clock mesh. By using the optimum value of size for PMOS and NMOS of transmission gate...

  10. Learning Methods for Lung Tumor Markerless Gating in Image-Guided Radiotherapy

    E-Print Network [OSTI]

    Dy, Jennifer G.

    Learning Methods for Lung Tumor Markerless Gating in Image-Guided Radiotherapy Ying Cui Dept. For gated lung cancer radiotherapy, it is difficult to generate ac- curate gating signals due to the large techniques, we apply them on five sequences of fluoroscopic images from five lung cancer patients against

  11. An overview of the gate and panel industry 

    E-Print Network [OSTI]

    Fisher, C. West

    2000-01-01

    acquiring raw materials, its pre-fabrication, welding, touch-up, and delivery of the product. My first major responsibility for Texas Gate and Panel was to expand its sales territory. It soon became obvious that a thorough knowledge of my competitors...

  12. FLOATING GATE COMPARATOR WITH AUTOMATIC OFFSET MANIPULATION FUNCTIONALITY

    E-Print Network [OSTI]

    Maryland at College Park, University of

    a desired offset. We exploit the nega- tive feedback functionality of pFET hot-electron injection to achieve to this circuit node, so charge on this gate remains trapped for a very long time. In our comparator, the circuit offset is stored in this high-retention charge form, and altered by means of injection and tunneling

  13. Quantum Logic Gates in Superconducting Qubits John M. Martinis

    E-Print Network [OSTI]

    Martinis, John M.

    Quantum Logic Gates in Superconducting Qubits John M. Martinis Department of Physics University on surface codes may allow errors in the 10-2 range [2]. Much research in superconducting qubits has been di for superconducting qubits, since they typically use fixed coupling elements set by fabrication. TRANSITION LOGIC

  14. Gating and regulation of connexin 43 (Cx43) hemichannels

    E-Print Network [OSTI]

    Newman, Eric A.

    Gating and regulation of connexin 43 (Cx43) hemichannels Jorge E. Contreras* , Juan C. Sa Connexin 43 (Cx43) nonjunctional or ``unapposed'' hemichannels can open under physiological or pathological conditions. We char- acterize hemichannels comprised of Cx43 or Cx43-EGFP (Cx43 with enhanced GFP fused

  15. Clustering of cyclic-nucleotide-gated channels in olfactory cilia

    E-Print Network [OSTI]

    French, Donald A.

    Cincinnati, OH 45267-0667, USA 513-558-6099 513-558-2727 FAX steve@syrano.acb.uc.edu Running title: CNG of olfactory signal transduction, including a high density of cyclic-nucleotide-gated (CNG) channels. CNG the locations of CNG channels along the length may be important in determining the sensitivity of odor detection

  16. Three-qubit phase gate based on cavity quantum electrodynamics 

    E-Print Network [OSTI]

    Chang, Jun-Tao; Zubairy, M. Suhail

    2008-01-01

    We describe a three-qubit quantum phase gate which is implemented by passing a four-level atom in a cascade configuration initially in its ground state through a three-mode optical cavity. The three qubits are represented by the photons in the three...

  17. Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches

    SciTech Connect (OSTI)

    Pärs, Martti; Köhler, Jürgen, E-mail: juergen.koehler@uni-bayreuth.de [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany)] [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany); Gräf, Katja; Bauer, Peter; Thelakkat, Mukundan [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)] [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)

    2013-11-25

    The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that determine the efficiency of this process are investigated, providing insights for the development of an all-optical gate.

  18. Temperature-controlled molecular depolarization gates in nuclear magnetic resonance

    SciTech Connect (OSTI)

    Schroder, Leif; Schroder, Leif; Chavez, Lana; Meldrum, Tyler; Smith, Monica; Lowery, Thomas J.; E. Wemmer, David; Pines, Alexander

    2008-02-27

    Down the drain: Cryptophane cages in combination with selective radiofrequency spin labeling can be used as molecular 'transpletor' units for transferring depletion of spin polarization from a hyperpolarized 'source' spin ensemble to a 'drain' ensemble. The flow of nuclei through the gate is adjustable by the ambient temperature, thereby enabling controlled consumption of hyperpolarization.

  19. Design, Simulation and Modeling of Insulated Gate Bipolar Transistor 

    E-Print Network [OSTI]

    Gupta, Kaustubh

    2013-07-09

    The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions...

  20. Compact floating-gate true random number generator

    E-Print Network [OSTI]

    Maryland at College Park, University of

    Compact floating-gate true random number generator P. Xu, Y.L. Wong, T.K. Horiuchi and P.A. Abshire A compact true random number generator (RNG) integrated circuit with adjustable probability is presented. Introduction: Random number generation is indispensable in crypto- graphy, scientific computing and stochastic

  1. TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid

    E-Print Network [OSTI]

    Najm, Farid N.

    TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid verification using node elimination proposes a novel approach to systematically reduce the power grid and accurately compute an upper bound on the voltage drops at power grid nodes that are retained. Furthermore, acriterion for the safety of nodes

  2. A Gate Level Sensor Network for Integrated Circuits Temperature Monitoring

    E-Print Network [OSTI]

    Potkonjak, Miodrag

    A Gate Level Sensor Network for Integrated Circuits Temperature Monitoring Alireza Vahdatpour, Saro and temporal) temperature monitoring allows several run-time optimizations. Protecting shared processors from, miodrag}@cs.ucla.edu Abstract-- We present the first sensor network architecture to monitor integrated

  3. Gating of high-mobility InAs metamorphic heterostructures

    SciTech Connect (OSTI)

    Shabani, J.; McFadden, A. P.; Shojaei, B.; Palmstrøm, C. J.

    2014-12-29

    We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In{sub 0.75}Ga{sub 0.25}As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In{sub 0.75}Al{sub 0.25}As as the barrier without an In{sub 0.75}Ga{sub 0.25}As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.

  4. Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

    E-Print Network [OSTI]

    D. J. Carrad; A. M. Burke; R. W. Lyttleton; H. J. Joyce; H. H. Tan; C. Jagadish; K. Storm; H. Linke; L. Samuelson; A. P. Micolich

    2014-04-08

    We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

  5. Trapped-ion quantum logic gates based on oscillating magnetic fields

    E-Print Network [OSTI]

    C. Ospelkaus; C. E. Langer; J. M. Amini; K. R. Brown; D. Leibfried; D. J. Wineland

    2008-05-14

    Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multi-qubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ion crystal and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser beam control and motional state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering, a fundamental source of decoherence in laser-mediated gates.

  6. Gate-Tunable Graphene Quantum Dot and Dirac Oscillator

    E-Print Network [OSTI]

    Abdelhadi Belouad; Ahmed Jellal; Youness Zahidi

    2015-05-29

    We obtain the solution of the Dirac equation in (2+1) dimensions in the presence of a constant magnetic field normal to the plane together with a two-dimensional Dirac-oscillator potential coupling. We study the energy spectrum of graphene quantum dot (QD) defined by electrostatic gates. We give discussions of our results based on different physical settings, whether the cyclotron frequency is similar or larger/smaller compared to the oscillator frequency. This defines an effective magnetic field that produces the effective quantized Landau levels. We study analytically such field in gate-tunable graphene QD and show that our structure allow us to control the valley degeneracy. Finally, we compare our results with already published work and also discuss the possible applications of such QD.

  7. Gate-Tunable Graphene Quantum Dot and Dirac Oscillator

    E-Print Network [OSTI]

    Belouad, Abdelhadi; Zahidi, Youness

    2015-01-01

    We obtain the solution of the Dirac equation in (2+1) dimensions in the presence of a constant magnetic field normal to the plane together with a two-dimensional Dirac-oscillator potential coupling. We study the energy spectrum of graphene quantum dot (QD) defined by electrostatic gates. We give discussions of our results based on different physical settings, whether the cyclotron frequency is similar or larger/smaller compared to the oscillator frequency. This defines an effective magnetic field that produces the effective quantized Landau levels. We study analytically such field in gate-tunable graphene QD and show that our structure allow us to control the valley degeneracy. Finally, we compare our results with already published work and also discuss the possible applications of such QD.

  8. High Fidelity Quantum Gates in the Presence of Dispersion

    E-Print Network [OSTI]

    Botan Khani; Seth T. Merkel; Felix Motzoi; Jay M. Gambetta; Frank K. Wilhelm

    2011-11-07

    We numerically demonstrate the control of motional degrees of freedom of an ensemble of neutral atoms in an optical lattice with a shallow trapping potential. Taking into account the range of quasimomenta across different Brillouin zones results in an ensemble whose members effectively have inhomogeneous control fields as well as spectrally distinct control Hamiltonians. We present an ensemble-averaged optimal control technique that yields high fidelity control pulses, irrespective of quasimomentum, with average fidelities above 98%. The resulting controls show a broadband spectrum with gate times in the order of several free oscillations to optimize gates with up to 13.2% dispersion in the energies from the band structure. This can be seen as a model system for the prospects of robust quantum control. This result explores the limits of discretizing a continuous ensemble for control theory.

  9. Quantum gate using qubit states separated by terahertz

    SciTech Connect (OSTI)

    Toyoda, Kenji; Urabe, Shinji [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); JST-CREST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012 (Japan); Haze, Shinsuke [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Yamazaki, Rekishu [JST-CREST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012 (Japan)

    2010-03-15

    A two-qubit quantum gate is realized using electronically excited states in a single ion with an energy separation on the order of a terahertz times the Planck constant as a qubit. Two phase-locked lasers are used to excite a stimulated Raman transition between two metastable states D{sub 3/2} and D{sub 5/2} separated by 1.82 THz in a single trapped {sup 40}Ca{sup +} ion to construct a qubit, which is used as the target bit for the Cirac-Zoller two-qubit controlled NOT gate. Quantum dynamics conditioned on a motional qubit is clearly observed as a fringe reversal in Ramsey interferometry.

  10. Synthesis of Reversible Functions Beyond Gate Count and Quantum Cost

    E-Print Network [OSTI]

    Robert Wille; Mehdi Saeedi; Rolf Drechsler

    2010-04-26

    Many synthesis approaches for reversible and quantum logic have been proposed so far. However, most of them generate circuits with respect to simple metrics, i.e. gate count or quantum cost. On the other hand, to physically realize reversible and quantum hardware, additional constraints exist. In this paper, we describe cost metrics beyond gate count and quantum cost that should be considered while synthesizing reversible and quantum logic for the respective target technologies. We show that the evaluation of a synthesis approach may differ if additional costs are applied. In addition, a new cost metric, namely Nearest Neighbor Cost (NNC) which is imposed by realistic physical quantum architectures, is considered in detail. We discuss how existing synthesis flows can be extended to generate optimal circuits with respect to NNC while still keeping the quantum cost small.

  11. High image quality sub 100 picosecond gated framing camera development

    SciTech Connect (OSTI)

    Price, R.H.; Wiedwald, J.D.

    1983-11-17

    A major challenge for laser fusion is the study of the symmetry and hydrodynamic stability of imploding fuel capsules. Framed x-radiographs of 10-100 ps duration, excellent image quality, minimum geometrical distortion (< 1%), dynamic range greater than 1000, and more than 200 x 200 pixels are required for this application. Recent progress on a gated proximity focused intensifier which meets these requirements is presented.

  12. Amorphorized tantalum-nickel binary films for metal gate applications

    SciTech Connect (OSTI)

    Ouyang, Jiaomin; Wongpiya, Ranida; Clemens, Bruce M.; Deal, Michael D.; Nishi, Yoshio

    2015-04-13

    Amorphous metal gates have the potential to eliminate the work function variation due to grain orientation for poly-crystalline metal gate materials, which is a leading contributor to threshold voltage variation for small transistors. Structural and electrical properties of TaNi alloys using co-sputtering with different compositions and multilayer structures with different thicknesses are investigated in this work. It is found that TaNi films are amorphous for a wide range of compositions as deposited, and the films stay amorphous after annealing at 400?°C in RTA for 1?min and up to at least 700?°C depending on the composition. The amorphous films eventually crystallize into Ni, Ta, and TaNi{sub 3} phases at high enough temperature. For multilayer Ta/Ni structures, samples with individual layer thickness of 0.12?nm and 1.2?nm are amorphous as deposited due to intermixing during deposition, and stay amorphous until annealed at 500?°C. The resistivity of the films as-deposited are around 200 ??·cm. The work function of the alloy is fixed at close to the Ta work function of 4.6?eV for a wide range of compositions. This is attributed to the segregation of Ta at the metal-oxide interface, which is confirmed by XPS depth profile. Overall, the excellent thermal stability and low resistivity makes this alloy system a promising candidate for eliminating work function variation for gate last applications, as compared to crystalline Ta or TiN gates.

  13. GATE: Energy Efficient Vehicles for Sustainable Mobility | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,Executive Compensation References: FAR 31.205-6Applications |Energy GATE:

  14. Single qubit gates in frequency-crowded transmon systems

    E-Print Network [OSTI]

    R. Schutjens; F. Abu Dagga; D. J. Egger; F. K. Wilhelm

    2013-06-10

    Recent experimental work on superconducting transmon qubits in 3D cavities show that their coherence times are increased by an order of magnitude compared to their 2D cavity counterparts. However to take advantage of these coherence times while scaling up the number of qubits it is advantageous to address individual qubits which are all coupled to the same 3D cavity fields. The challenge in controlling this system comes from spectral crowding, where leakage transition of qubits are close to computational transitions in other. Here it is shown that fast pulses are possible which address single qubits using two quadrature control of the pulse envelope while the DRAG method alone only gives marginal improvements over the conventional Gaussian pulse shape. On the other hand, a first order result using the Magnus expansion gives a fast analytical pulse shape which gives a high fidelity gate for a specific gate time, up to a phase factor on the second qubit. Further numerical analysis corroborates these results and yields to even faster gates, showing that leakage state anharmonicity does not provide a fundamental quantum speed limit.

  15. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

    2001-01-01

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  16. Universal Gates via Fusion and Measurement Operations on SU$(2)_4$ Anyons

    E-Print Network [OSTI]

    Claire Levaillant; Bela Bauer; Michael Freedman; Zhenghan Wang; Parsa Bonderson

    2015-07-01

    We examine a class of operations for topological quantum computation based on fusing and measuring topological charges for systems with SU$(2)_4$ or $k=4$ Jones-Kauffman anyons. We show that such operations augment the braiding operations, which, by themselves, are not computationally universal. This augmentation results in a computationally universal gate set through the generation of an exact, topologically protected irrational phase gate and an approximate, topologically protected controlled-$Z$ gate.

  17. A simple trapped-ion architecture for high-fidelity Toffoli gates

    E-Print Network [OSTI]

    Massimo Borrelli; Laura Mazzola; Mauro Paternostro; Sabrina Maniscalco

    2010-12-08

    We discuss a simple architecture for a quantum Toffoli gate implemented using three trapped ions. The gate, which in principle can be implemented with a single laser-induced operation, is effective under rather general conditions and is strikingly robust (within any experimentally realistic range of values) against dephasing, heating and random fluctuations of the Hamiltonian parameters. We provide a full characterization of the unitary and noise-affected gate using three-qubit quantum process tomography.

  18. Use of high-level design information for enabling automation of fine-grained power gating

    E-Print Network [OSTI]

    Agarwal, Abhinav

    2014-01-01

    Leakage power reduction through power gating requires considerable design and verification effort. Conventionally, extensive analysis is required for dividing a heterogeneous design into power domains and generating control ...

  19. How to Successfully Implement a Knowledge Management System for the Mechanical Engineering Department at Gating Incorporated

    E-Print Network [OSTI]

    Mudd, John

    2009-05-15

    , utilizing some of the strategies, for the implementation of a Knowledge Management System for the Mechanical Engineering Department at Gating Incorporated....

  20. A Surprising Clarification of the Mechanism of Ion-channel Voltage-Gating

    E-Print Network [OSTI]

    Ashok Palaniappan

    2011-04-20

    An intense controversy has surrounded the mechanism of voltage-gating in ion channels. We interpreted the two leading models of voltage-gating with respect to the thermodynamic energetics of membrane insertion of the voltage-sensing 'module' from a comprehensive set of potassium channels. KvAP is an archaeal voltage-gated potassium channel whose x-ray structure was the basis for determining the general mechanism of voltage-gating. The free energy of membrane insertion of the KvAP voltage sensor was revealed to be a single outlier. This was due to its unusual sequence that facilitated large gating movements in its native lipid membrane. This degree of free energy was the least typical of the other voltage sensors, including the Shaker potassium channel. We inferred that the two leading models of voltage-gating referred to alternative mechanisms of voltage-gating: each is applicable to an independent set of ion channels. The large motion of the voltage-sensor during gating proposed by the KvAP-paddle model of gating is unlikely to be mirrored by the majority of ion channels whose voltage sensors are not located at the membrane-cytoplasm interface in the channel closed state.

  1. Sandia Energy - ECIS and i-GATE: Innovation Hub Connects Clean...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    support system to accelerate the commercialization of innovative technologies related to green transportation and clean energy. There are now eight i-GATE clients developing fuel...

  2. Low Power 8T SRAM Using 32nm Independent Gate FinFET Young Bok Kim

    E-Print Network [OSTI]

    Ayers, Joseph

    by the process, but also it can be controlled by the back gate voltage (VGb). This is similar to the body effect

  3. Implementing a neutral-atom controlled-phase gate with a single Rydberg pulse

    E-Print Network [OSTI]

    Rui Han; Hui Khoon Ng; Berthold-Georg Englert

    2014-09-04

    One can implement fast two-qubit entangling gates by exploiting the Rydberg blockade. Although various theoretical schemes have been proposed, experimenters have not yet been able to demonstrate two-atom gates of high fidelity due to experimental constraints. We propose a novel scheme, which only uses a single Rydberg pulse, for the construction of neutral-atom controlled-phase gates. In contrast to the existing schemes, our scheme is simpler to implement and requires neither individual addressing of atoms nor adiabatic procedures. With realistically estimated experimental parameters, a gate fidelity higher than 0.99 is achievable.

  4. Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape

    Office of Energy Efficiency and Renewable Energy (EERE)

    Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

  5. Local implementations of non-local quantum gates in linear entangled channel

    E-Print Network [OSTI]

    Debashis Saha; Sanket Nandan; Prasanta K. Panigrahi

    2014-08-03

    In this paper, we demonstrate n-party controlled unitary gate implementations locally on arbitrary remote state through linear entangled channel where control parties share entanglement with the adjacent control parties and only one of them shares entanglement with the target party. In such a network, we describe the protocol of simultaneous implementation of controlled-Hermitian gate starting from three party scenario. We also explicate the implementation of three party controlled-Unitary gate, a generalized form of To?oli gate and subsequently generalize the protocol for n-party using minimal cost.

  6. Nonadiabatic molecular orientation by polarization-gated ultrashort laser pulses

    SciTech Connect (OSTI)

    Chen Cheng; Wu Jian; Zeng Heping [State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062 (China)

    2010-09-15

    We show that the nonadiabatic orientation of diatomic polar molecules can be controlled by polarization-gated ultrashort laser pulses. By finely adjusting the time interval between two circularly polarized pulses of different wavelengths but the same helicity, the orientation direction of the molecules can be twirled. A cloverlike potential is created by using two circularly polarized laser pulses of different wavelengths and opposite helicity, leading to multidirectional molecular orientation along the potential wells, which can be well revealed by a high-order statistics metric of <>.

  7. Gates County, North Carolina: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable UrbanKentucky: Energy ResourcesMaui Area (DOEMaui AreaGastonGates County,

  8. Gates Mills, Ohio: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable UrbanKentucky: Energy ResourcesMaui Area (DOEMaui AreaGastonGates

  9. Gate Hours & Services | Stanford Synchrotron Radiation Lightsource

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclearlong version)shortGate Hours & Services

  10. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E CChinaC L SLooking at Transistor Gate

  11. SU-E-J-45: Design and Study of An In-House Respiratory Gating Phantom Platform for Gated Radiotherapy

    SciTech Connect (OSTI)

    Senthilkumar, S

    2014-06-01

    Purpose: The main purpose of this work was to develop an in-house low cost respiratory motion phantom platform for testing the accuracy of the gated radiotherapy system and analyze the dosimetric difference during gated radiotherapy. Methods: An in-house respiratory motion platform(RMP) was designed and constructed for testing the targeting accuracy of respiratory tracking system. The RMP consist of acrylic Chest Wall Platform, 2 DC motors, 4 IR sensors, speed controller circuit, 2 LED and 2 moving rods inside the RMP. The velocity of the movement can be varied from 0 to 30 cycles per minute. The platform mounted to a base using precision linear bearings. The base and platform are made of clear, 15mm thick polycarbonate plastic and the linear ball bearings are oriented to restrict the platform to a movement of approximately 50mm up and down with very little friction. Results: The targeting accuracy of the respiratory tracking system was evaluated using phantom with and without respiratory movement with varied amplitude. We have found the 5% dose difference to the PTV during the movement in comparison with stable PTV. The RMP can perform sinusoidal motion in 1D with fixed peak to peak motion of 5 to 50mm and cycle interval from 2 to 6 seconds. The RMP was designed to be able to simulate the gross anatomical anterior posterior motion attributable to respiration-induced motion of the thoracic region. Conclusion: The unique RMP simulates breathing providing the means to create a comprehensive program for commissioning, training, quality assurance and dose verification of gated radiotherapy treatments. Create the anterior/posterior movement of a target over a 5 to 50 mm distance to replicate tumor movement. The targeting error of the respiratory tracking system is less than 1.0 mm which shows suitable for clinical treatment with highly performance.

  12. Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape

    E-Print Network [OSTI]

    Hashemi, Pouya

    A detailed study of hole mobility is presented for gate-all-around Si nanowire p-MOSFETs with conformal high-?/MG and various high-temperature hydrogen annealing processes. Hole mobility enhancement relative to planar SOI ...

  13. Workshop on gate valve pressure locking and thermal binding

    SciTech Connect (OSTI)

    Brown, E.J.

    1995-07-01

    The purpose of the Workshop on Gate Valve Pressure Locking and Thermal Binding was to discuss pressure locking and thermal binding issues that could lead to inoperable gate valves in both boiling water and pressurized water reactors. The goal was to foster exchange of information to develop the technical bases to understand the phenomena, identify the components that are susceptible, discuss actual events, discuss the safety significance, and illustrate known corrective actions that can prevent or limit the occurrence of pressure locking or thermal binding. The presentations were structured to cover U.S. Nuclear Regulatory Commission staff evaluation of operating experience and planned regulatory activity; industry discussions of specific events, including foreign experience, and efforts to determine causes and alleviate the affects; and valve vendor experience and recommended corrective action. The discussions indicated that identifying valves susceptible to pressure locking and thermal binding was a complex process involving knowledge of components, systems, and plant operations. The corrective action options are varied and straightforward.

  14. Hazardous waste dislodging and conveyance: The confined sluicing method

    SciTech Connect (OSTI)

    Summers, D.A.; Fossey, R.D.; Mann, M.D.; Blaine, J.G. [Univ. of Missouri, Rolla, MO (United States). High Pressure Waterjet Lab.; Rinker, M.W. [Pacific Northwest Lab., Richland, WA (United States)

    1994-09-01

    This report describes an investigation of a means for dislodging and conveying waste currently stored in underground storage tanks. A series of experiments have been carried out to evaluate the potential of a medium pressure, medium flow rate cutting system as a means of dislodging the waste. It has been found that waterjets at a pressure of 10,000 psi can effectively cut the material which has been chosen to simulate the hardened saltcake within the storage tanks. Based on a parameterization test it has thus been calculated that an inlet flow volume of approximately 30 gallons per minute will be sufficient to excavate 30 gallons per minute of waste from a tank. In order to transport the resulting slurry from the tank, a modified jet pump has been developed and has demonstrated its capability of conveying fluid and waste particles, up to one inch in diameter, to a height of more than 60 feet. Experiments were conducted to examine different configurations to achieve the production levels required for waste removal and to clean the walls of residual material. It was found more effective to clean the walls using an inclined angle of impact rather than a perpendicular angle of impact in order to provide a safeguard against driving the water through any cracks in the containment. It was demonstrated that excavation can take place with almost total immediate extraction of the water and debris from the cutting process. The results have qualitatively shown the potential of a medium pressure waterjet system for achieving the required results for underground storage tank waste retrieval.

  15. Constructing Quantum Logic Gates Using q-Deformed Harmonic Oscillator Algebras

    E-Print Network [OSTI]

    Azmi Ali Altintas; Fatih Ozaydin; Can Yesilyurt; Sinan Bugu; Metin Arik

    2015-04-23

    We study two-level q-deformed angular momentum states and us- ing q-deformed harmonic oscillators, we provide a framework for con- structing qubits and quantum gates. We also present the construction of some basic quantum gates including CNOT, SWAP, Toffoli and Fredkin.

  16. Z-Gate Operation on a Superconducting Flux Qubit via Its Readout SQUID

    E-Print Network [OSTI]

    Jin, X.?Y.

    Detuning a superconducting qubit from its rotating frame is one means to implement a Z-gate operation. In this work, we implement a Z gate by pulsing a current through the qubit’s readout dc SQUID. While the dc SQUID acts ...

  17. Gating Currents from Kv7 Channels Carrying Neuronal Hyperexcitability Mutations in the Voltage-Sensing Domain

    E-Print Network [OSTI]

    Bezanilla, Francisco

    unable to provide a detailed assessment of the structural rearrangements underlying channel gating.2 channels both functionally and structurally, were used for these experiments. The data obtained showed activation of gating-pore currents at depolarized potentials. These results reveal that distinct molecular

  18. THE SMALL SIGNAL AMPLIFICATION OF THE GATED DIODE OPERATED IN BREAKDOWN REGIME

    E-Print Network [OSTI]

    capacitance of approximately 4pF. Figure 1 - Cross section of the gated diode. The device was fabricated impedance given by the pn junction avalanche regime. The cross section of the utilized device is presented and the area of the gate gives a capacitance of approximately 4pF. 2. DC Measurements In order to set the bias

  19. [ ]February 2014 The original 1957 Gates pile driving formula is an empirically derived dynamic formula

    E-Print Network [OSTI]

    Harms, Kyle E.

    [ ]February 2014 PROBLEM The original 1957 Gates pile driving formula is an empirically derived dynamic formula that is used to predict pile capacity in the field during pile installation.The original Gates formula tends to over-predict pile capacity for low driving resistances and under-predict pile

  20. Fig. 1. Schematic of gating operation driven by centrifugal force. (a) shows top view of the

    E-Print Network [OSTI]

    Banerjee, Debjyoti

    R1 R2 (a) Pm (b) Fig. 1. Schematic of gating operation driven by centrifugal force. (a) shows top-expanding opening. Liquid pressure at the meniscus is Pm. DESIGN ANALYSES OF CAPILLARY BURST VALVES IN CENTRIFUGAL, Capillary Gating, Centrifugal force, FlumeCAD I. Introduction There is a wide interest in micron

  1. Quantum Process Tomography of a Universal Entangling Gate Implemented with Josephson Phase Qubits

    E-Print Network [OSTI]

    Martinis, John M.

    . Experiments using superconducting qubits have validated the truth table for particular implementations of e the performance of a universal entangling gate between two superconducting quantum bits. Process tomography . The SQiSW is a "natural" two-qubit gate as it directly results from capacitive coupling of superconducting

  2. Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum computing

    E-Print Network [OSTI]

    Martinis, John M.

    Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum circuits, and is compatible with microfabrication. For superconducting qubits the surface code7 99%. Here, we demonstrate a universal set of logic gates in a superconducting multi-qubit processor

  3. Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe*

    E-Print Network [OSTI]

    Beebe, David J.

    Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe to create a number of microfluidic analogs to electronic circuit components. Three classes of components are demonstrated: (1) OR/AND, NOR/NAND, and XNOR digital microfluidic logic gates; (2) programmable, autonomous

  4. Gated frequency-resolved optical imaging with an optical parametric amplifier

    DOE Patents [OSTI]

    Cameron, Stewart M. (Albuquerque, NM); Bliss, David E. (Tijeras, NM); Kimmel, Mark W. (Edgewood, NM); Neal, Daniel R. (Tijeras, NM)

    1999-01-01

    A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media.

  5. Gated frequency-resolved optical imaging with an optical parametric amplifier

    DOE Patents [OSTI]

    Cameron, S.M.; Bliss, D.E.; Kimmel, M.W.; Neal, D.R.

    1999-08-10

    A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media. 13 figs.

  6. STANDARD OPERATING PROCEDURE FOR TUBE "A1-GateOx" furnace in TRL.

    E-Print Network [OSTI]

    Reif, Rafael

    STANDARD OPERATING PROCEDURE FOR TUBE "A1-GateOx" furnace in TRL. INTRODUCTION Tube "A1-Gate. Three Eurotherm temperature controllers provide a 20 inch long, flat profile in the Center Zone the special heat resistant gloves to handle those parts PROCEDURE. 1) "ENGAGE" the machine in CORAL for TRL

  7. Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1

    E-Print Network [OSTI]

    Shepard, Kenneth

    Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

  8. Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films 

    E-Print Network [OSTI]

    Lin, Chen-Han

    2012-10-19

    nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer...

  9. Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor

    E-Print Network [OSTI]

    Tobin, Roger G.

    Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor Yung Ho September 2007 We have investigated the effects of sulfur contamination on a Pt-gate silicon carbide based monitoring, solid-oxide fuel cells, and coal gasification, require operation at much higher temperatures than

  10. Coherent molecular transistor: Control through variation of the gate wave function

    SciTech Connect (OSTI)

    Ernzerhof, Matthias

    2014-03-21

    In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

  11. Integrated Results for Dual Low Voltage IC Based High and Low Side Gate Drive

    E-Print Network [OSTI]

    , electronicballast I. INTRODUCTION High and low side gate drivers are required in most switching power converters Zane Colorado Power Electronics Center (CoPEC) Department of Electrical and Computer Engineering, UCB design for high and low side gate drive is presented based on use of two identical low voltage ICs

  12. High performance electrolyte-gated carbon nanotube transistors Sami Rosenblatt1

    E-Print Network [OSTI]

    McEuen, Paul L.

    1 High performance electrolyte-gated carbon nanotube transistors Sami Rosenblatt1 , Yuval Yaish1 , Jiwoong Park1,2 , Jeff Gore2 , Vera Sazonova1 , and Paul L. McEuen1 1 Laboratory of Atomic and Solid State, annealing to improve the contacts, and an electrolyte as a gate, we obtain very high device mobilites

  13. High-Aspect Ratio Deep Sub-Micron -Si Gate Etch Process Control

    E-Print Network [OSTI]

    Grizzle, Jessy W.

    .-M. Park Mask U of M Industry Industry Goal · High throughput · Good morphology · Minimum gate oxide damage1 High-Aspect Ratio Deep Sub-Micron -Si Gate Etch Process Control H.-M. Park, T. L. Brock, D · Blank sample ·Patterned sample · Conclusion H.-M. Park #12;3 Etching Process of Deep Sub

  14. Lifetime of high-k gate dielectrics and analogy with strength of quasibrittle Jia-Liang Le,1

    E-Print Network [OSTI]

    Bazant, Martin Z.

    for breakdown lifetime increases in proportion to the thickness of the oxide layer and suggests new ideas in the gate oxide layer induces the trap-assisted tunneling process, which leads to the gate leakage current

  15. Charge Trapping Characteristics of SONOS Capacitors with Control Gates of Different Work Functions during Program/Erase Operations

    E-Print Network [OSTI]

    Lee, Jong Duk

    (3.2 eV), which gives higher probability of the electron tunneling from control gate to the silicon traps as its program mechanism. When a positive bias stress is applied on the control gate, electrons gate and top oxide tunnel into the silicon nitride layer and recombine with holes which are trapped

  16. Glitch Power Minimization by Gate Freezing L. Benini3 G. De Micheli A. Maciiz E. Maciiz M. Poncinoz R. Scarsiz

    E-Print Network [OSTI]

    De Micheli, Giovanni

    Glitch Power Minimization by Gate Freezing L. Benini3 G. De Micheli A. Maciiz E. Maciiz M freezing idea we present in this paper. Di erently from gate freezing, the techniques above are applied before placement and routing. We have applied the gate freezing procedure to the Iscas'85 benchmarks 2

  17. Procedures for realizing an approximate universal NOT gate

    E-Print Network [OSTI]

    Jeongho Bang; Seung-Woo Lee; Hyunseok Jeong; Jinhyoung Lee

    2012-12-19

    We consider procedures to realize an approximate universal NOT gate in terms of average fidelity and fidelity deviation. The average fidelity indicates the optimality of operation on average, while the fidelity deviation does the universality of operation. We show that one-qubit operations have a sharp trade-off relation between average fidelity and fidelity deviation, and two-qubit operations show a looser trade-off relation. The genuine universality holds for operations of more than two qubits, and those of even more qubits are beneficial to compensating imperfection of control. In addition, we take into account operational noises which contaminate quantum operation in realistic circumstances. We show that the operation recovers from the contamination by a feedback procedure of differential evolution. Our feedback scheme is also applicable to finding an optimal and universal operation of NOT.

  18. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, David K. (Golden, CO); Potter, Thomas F. (Denver, CO)

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

  19. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, D.K.; Potter, T.F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

  20. Optimized controlled Z gates for two superconducting qubits coupled through a resonator

    E-Print Network [OSTI]

    D. J. Egger; F. K. Wilhelm

    2013-06-28

    Superconducting qubits are a promising candidate for building a quantum computer. A continued challenge for fast yet accurate gates to minimize the effects of decoherence. Here we apply numerical methods to design fast entangling gates, specifically the controlled Z, in an architecture where two qubits are coupled via a resonator. We find that the gates can be sped up by a factor of two and reach any target fidelity. We also discuss how systematic errors arising from experimental conditions affect the pulses and how to remedy them, providing a strategy for the experimental implementation of our results. We discuss the shape of the pulses, their spectrum and symmetry.

  1. Adiabatic two-photon quantum gate operations using a long-range photonic bus

    E-Print Network [OSTI]

    Anthony P. Hope; Thach G. Nguyen; Arnan Mitchell; Andrew D. Greentree

    2014-12-01

    Adiabatic techniques have much potential to realise practical and robust optical waveguide devices. Traditionally photonic elements are limited to coupling schemes that rely on proximity to nearest neighbour elements. We combine adiabatic passage with a continuum based long-range optical bus to break free from such topological restraints and thereby outline a new approach to photonic quantum gate design. We explicitly show designs for adiabatic quantum gates that produce a Hadamard, 50:50 and 1/3:2/3 beam splitter, and non-deterministic CNOT gate based on planar thin, shallow ridge waveguides. Our calculations are performed under conditions of one and two-photon inputs.

  2. Design of a spin-wave majority gate employing mode selection

    SciTech Connect (OSTI)

    Klingler, S. Pirro, P.; Brächer, T.; Leven, B.; Hillebrands, B.; Chumak, A. V.

    2014-10-13

    The design of a microstructured, fully functional spin-wave majority gate is presented and studied using micromagnetic simulations. This all-magnon logic gate consists of three-input waveguides, a spin-wave combiner, and an output waveguide. In order to ensure the functionality of the device, the output waveguide is designed to perform spin-wave mode selection. We demonstrate that the gate evaluates the majority of the input signals coded into the spin-wave phase. Moreover, the all-magnon data processing device is used to perform logic AND-, OR-, NAND-, and NOR- operations.

  3. Multi-images deconvolution improves signal-to-noise ratio on gated stimulated emission depletion microscopy

    SciTech Connect (OSTI)

    Castello, Marco; Diaspro, Alberto; Vicidomini, Giuseppe

    2014-12-08

    Time-gated detection, namely, only collecting the fluorescence photons after a time-delay from the excitation events, reduces complexity, cost, and illumination intensity of a stimulated emission depletion (STED) microscope. In the gated continuous-wave- (CW-) STED implementation, the spatial resolution improves with increased time-delay, but the signal-to-noise ratio (SNR) reduces. Thus, in sub-optimal conditions, such as a low photon-budget regime, the SNR reduction can cancel-out the expected gain in resolution. Here, we propose a method which does not discard photons, but instead collects all the photons in different time-gates and recombines them through a multi-image deconvolution. Our results, obtained on simulated and experimental data, show that the SNR of the restored image improves relative to the gated image, thereby improving the effective resolution.

  4. Shot noise in an electron waveguide square root of NOT gate

    E-Print Network [OSTI]

    Linda E. Reichl; Michael G. Snyder

    2006-01-17

    We present a calculation of the shot noise in a ballistic electron waveguide square root of NOT gate. A general expression for the shot noise in the leads connected to these types of gates is shown. We then parameterize an S-matrix which qualitatively describes the action of a square root of NOT gate previously found through numerical methods for GaAs/Al_xGa_{1-x}As based waveguides systems. Using this S-matrix, the shot noise in a single output lead and across two output leads is calculated. We find that the measurement of the shot noise across two output leads allows for the determination of the fidelity of the gate itself.

  5. Retrofit of Tehran City Gate Station C.G.S. No. 2 by Using Turboexpander 

    E-Print Network [OSTI]

    Seresht, R. T.; Ja, H. K.

    2010-01-01

    air components. 6. Liquefaction gases (like Helium). 7. Separating condensable components of natural gas. 8. Power generation from geothermal energy. Retrofit of Tehran City Gate Station C.G.S. No.2 by Using Turboexpander Yasun Farayand Company...

  6. Vehicle Technologies Office Merit Review 2015: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by The Ohio State University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy...

  7. Improving Quantum Gate Fidelities by Using a Qubit to Measure Microwave Pulse Distortions

    E-Print Network [OSTI]

    Gustavsson, Simon

    We present a new method for determining pulse imperfections and improving the single-gate fidelity in a superconducting qubit. By applying consecutive positive and negative ? pulses, we amplify the qubit evolution due to ...

  8. Vehicle Technologies Office Merit Review 2015: GATE Center for Electric Drive Transportation

    Broader source: Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  9. Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Clemson University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE center of excellence...

  10. Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

  11. Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Broader source: Energy.gov [DOE]

    Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

  12. CNT-based gas ionizers with integrated MEMS gate for portable mass spectrometry applications

    E-Print Network [OSTI]

    Velasquez-Garcia, Luis Fernando

    We report the fabrication and experimental characterization of a novel low-cost carbon nanotube (CNT)-based electron impact ionizer (EII) with integrated gate for portable mass spectrometry applications. The device achieves ...

  13. Energy-aware architectures, circuits and CAD for field programmable gate arrays

    E-Print Network [OSTI]

    Honoré, Francis

    2006-01-01

    Field Programmable Gate Arrays (FPGAs) are a class of hardware reconfigurable logic devices based on look-up tables (LUTs) and programmable interconnect that have found broad acceptance for a wide range of applications. ...

  14. Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

    E-Print Network [OSTI]

    J. T. Muhonen; A. Laucht; S. Simmons; J. P. Dehollain; R. Kalra; F. E. Hudson; S. Freer; K. M. Itoh; D. N. Jamieson; J. C. McCallum; A. S. Dzurak; A. Morello

    2014-10-09

    Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically purified 28-Si. We find average gate fidelities of 99.95 % for the electron, and 99.99 % for the nuclear spin. These values are above certain error correction thresholds, and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware, and not the intrinsic behaviour of the qubit.

  15. Electrolyte-gated graphene field-effect transistors : modeling and applications

    E-Print Network [OSTI]

    Mackin, Charles Edward

    2015-01-01

    This work presents a model for electrolyte-gated graphene field-effect transistors (EGFETs) that incorporates the effects of the double layer capacitance and the quantum capacitance of graphene. The model is validated ...

  16. Multi-qubit quantum phase gates based on surface plasmons of a nanosphere

    E-Print Network [OSTI]

    Jun Ren; Jun Yuan; Xiangdong Zhang

    2015-02-11

    The Dicke subradiance and superradiance resulting from the interaction between surface plasmons of a nanosphere and an ensemble of quantum emitters have been investigated using a Green function approach. Based on such an investigation, we propose a scheme for a deterministic multiqubit quantum phase gate. As an example, twoqubit, threequbit, and fourqubit quantum phase gates have been designed and analyzed in detail. Phenomena due to the losses in the metal are discussed. Potential applications of these phenomena to quantuminformation processing are anticipated.

  17. Multi-qubit quantum phase gates based on surface plasmons of a nanosphere

    E-Print Network [OSTI]

    Ren, Jun; Zhang, Xiangdong

    2015-01-01

    The Dicke subradiance and superradiance resulting from the interaction between surface plasmons of a nanosphere and an ensemble of quantum emitters have been investigated using a Green function approach. Based on such an investigation, we propose a scheme for a deterministic multiqubit quantum phase gate. As an example, twoqubit, threequbit, and fourqubit quantum phase gates have been designed and analyzed in detail. Phenomena due to the losses in the metal are discussed. Potential applications of these phenomena to quantuminformation processing are anticipated.

  18. Surround-gated vertical nanowire quantum dots M. H. M. van Weert,1

    E-Print Network [OSTI]

    arsenide phosphide InAsP quantum dots embedded in vertical surround-gated indium phosphide InP nanowires dots. The InAsP quantum dots, embedded in InP nanowires, are grown in the vapor-liquid-solid mode usingSurround-gated vertical nanowire quantum dots M. H. M. van Weert,1 M. den Heijer,1 M. P. van Kouwen

  19. Rooted-tree network for optimal non-local gate implementation

    E-Print Network [OSTI]

    Nilesh Vyas; Debashis Saha; Prasanta K. Panigrahi

    2015-06-28

    A general quantum network for implementing non-local control-unitary gates, between remote parties at minimal entanglement cost, is shown to be a rooted-tree structure. Starting from a five party scenario, we demonstrate the local implementation of simultaneous control-Hermitian and multiparty control-unitary gates in an arbitrary n-party network. Previously established networks are shown to be special cases of this general construct.

  20. Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry

    E-Print Network [OSTI]

    Colin J. Trout; Kenneth R. Brown

    2015-01-29

    Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

  1. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    SciTech Connect (OSTI)

    2011-07-31

    This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

  2. Theory of signal and noise in double-gated nanoscale electronic pH sensors

    SciTech Connect (OSTI)

    Go, Jonghyun; Nair, Pradeep R.; Alam, Muhammad A.

    2012-08-01

    The maximum sensitivity of classical nanowire (NW)-based pH sensors is defined by the Nernst limit of 59 mV/pH. For typical noise levels in ultra-small single-gated nanowire sensors, the signal-to-noise ratio is often not sufficient to resolve pH changes necessary for a broad range of applications. Recently, a new class of double-gated devices was demonstrated to offer apparent 'super-Nernstian' response (>59 mV/pH) by amplifying the original pH signal through innovative biasing schemes. However, the pH-sensitivity of these nanoscale devices as a function of biasing configurations, number of electrodes, and signal-to-noise ratio (SNR) remains poorly understood. Even the basic question such as 'Do double-gated sensors actually resolve smaller changes in pH compared to conventional single-gated sensors in the presence of various sources of noise?' remains unanswered. In this article, we provide a comprehensive numerical and analytical theory of signal and noise of double-gated pH sensors to conclude that, while the theoretical lower limit of pH-resolution does not improve for double-gated sensors, this new class of sensors does improve the (instrument-limited) pH resolution.

  3. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S.; Kodera, T.; Takeda, K.; Obata, T.; Tarucha, S.

    2014-05-28

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  4. Time-gated single photon counting enables separation of CARS microscopy data from multiphoton-excited tissue autofluorescence

    E-Print Network [OSTI]

    Ly, Sonny; McNerney, Gregory; Chan, James; Fore, Samantha; Huser, Thomas

    2007-01-01

    Raman scattering microscopy (CARS): Instrumentation andanti-Stokes Raman scattering (CARS) imaging," Opt. Lett. 31,and separated from the CARS signal by employing time-gating

  5. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    SciTech Connect (OSTI)

    Erickson, Paul

    2012-05-31

    This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davisâ??s existing GATE centers have become the campusâ??s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

  6. Water gate array for current flow or tidal movement pneumatic harnessing system

    DOE Patents [OSTI]

    Gorlov, Alexander M. (Brookline, MA)

    1991-01-01

    The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

  7. Intrinsic phonon decoherence and quantum gates in coupled lateral quantum dot charge qubits

    E-Print Network [OSTI]

    Markus J. Storcz; Udo Hartmann; Sigmund Kohler; Frank K. Wilhelm

    2005-07-28

    Recent experiments by Hayashi et al. [Phys. Rev. Lett. 91, 226804 (2003)] demonstrate coherent oscillations of a charge quantum bit (qubit) in laterally defined quantum dots. We study the intrinsic electron-phonon decoherence and gate performance for the next step: a system of two coupled charge qubits. The effective decoherence model contains properties of local as well as collective decoherence. Decoherence channels can be classified by their multipole moments, which leads to different low-energy spectra. It is shown that due to the super-Ohmic spectrum, the gate quality is limited by the single-qubit Hadamard gates. It can be significantly improved, by using double-dots with weak tunnel coupling.

  8. Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate

    DOE Patents [OSTI]

    Sappey, Andrew D. (Golden, CO)

    1998-04-14

    Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

  9. Spintronic single qubit gate based on a quantum ring with spin-orbit interaction

    E-Print Network [OSTI]

    Peter Foldi; Balazs Molnar; Mihaly G. Benedict; F. M. Peeters

    2004-06-14

    In a quantum ring connected with two external leads the spin properties of an incoming electron are modified by the spin-orbit interaction resulting in a transformation of the qubit state carried by the spin. The ring acts as a one qubit spintronic quantum gate whose properties can be varied by tuning the Rashba parameter of the spin-orbit interaction, by changing the relative position of the junctions, as well as by the size of the ring. We show that a large class of unitary transformations can be attained with already one ring -- or a few rings in series -- including the important cases of the Z, X, and Hadamard gates. By choosing appropriate parameters the spin transformations can be made unitary, which corresponds to lossless gates.

  10. Coherent motion of stereocilia assures the concerted gating of hair-cell transduction channels

    E-Print Network [OSTI]

    Andrei S. Kozlov; Thomas Risler; A. J. Hudspeth

    2009-02-16

    The hair cell's mechanoreceptive organelle, the hair bundle, is highly sensitive because its transduction channels open over a very narrow range of displacements. The synchronous gating of transduction channels also underlies the active hair-bundle motility that amplifies and tunes responsiveness. The extent to which the gating of independent transduction channels is coordinated depends on how tightly individual stereocilia are constrained to move as a unit. Using dual-beam interferometry in the bullfrog's sacculus, we found that thermal movements of stereocilia located as far apart as a bundle's opposite edges display high coherence and negligible phase lag. Because the mechanical degrees of freedom of stereocilia are strongly constrained, a force applied anywhere in the hair bundle deflects the structure as a unit. This feature assures the concerted gating of transduction channels that maximizes the sensitivity of mechanoelectrical transduction and enhances the hair bundle's capacity to amplify its inputs.

  11. High fidelity ac gate operations of the quantum dot hybrid qubit

    E-Print Network [OSTI]

    Clement H. Wong

    2015-10-20

    Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error correction have not yet been achieved. We show theoretically that the threshold fidelity can be achieved with ac gate operation of the quantum dot hybrid qubit. Formed by three electrons in a double dot, this qubit is electrically controlled, does not require magnetic fields, and runs at GHz gate speeds. We analyze the decoherence caused by 1/f charge noise in this qubit, find parameters that minimize the charge noise dependence in the qubit frequency, and determine the optimal working points for ac gate operations that drive the detuning and tunnel coupling.

  12. 60 nm gate length Al2O3 / In0.53Ga0.47As gate-first MOSFETs using InAs raised source-drain regrowth

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    plasma / trimethylaluminum (TMA) cycles. A 60 nm sputtered W/15 nm electron beam evaporated Cr/400 nm PECVD SiO2/15 nm electron beam evaporated Cr gate stack was blanket- deposited. Gate lengths between 60 and optical lithography. A high power inductively coupled (ICP) plasma SF6/Ar etch defined vertical pillars

  13. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and foulingmore »is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.« less

  14. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    SciTech Connect (OSTI)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  15. Charging dynamics of a floating gate transistor with site-controlled quantum dots

    SciTech Connect (OSTI)

    Maier, P. Hartmann, F.; Emmerling, M.; Schneider, C.; Höfling, S.; Kamp, M.; Worschech, L.

    2014-08-04

    A quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs quantum dots was realized by means of molecular beam epitaxy and etching techniques. By sampling of different gate voltage sweeps for the determination of charging and discharging thresholds, it was found that discharging takes place at short time scales of ?s, whereas several seconds of waiting times within a distinct negative gate voltage range were needed to charge the quantum dots. Such quantum dot structures have thus the potential to implement logic functions comprising charge and time dependent ingredients such as counting of signals or learning rules.

  16. Engineering a C-Phase quantum gate: optical design and experimental realization

    E-Print Network [OSTI]

    Andrea Chiuri; Chiara Greganti; Paolo Mataloni

    2012-04-12

    A two qubit quantum gate, namely the C-Phase, has been realized by exploiting the longitudinal momentum (i.e. the optical path) degree of freedom of a single photon. The experimental setup used to engineer this quantum gate represents an advanced version of the high stability closed-loop interferometric setup adopted to generate and characterize 2-photon 4-qubit Phased Dicke states. Some experimental results, dealing with the characterization of multipartite entanglement of the Phased Dicke states are also discussed in detail.

  17. Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices

    SciTech Connect (OSTI)

    Gala, F. [Universitá di Roma La Sapienza, Via Scarpa 14-16, 00161 Rome (Italy); Zollo, G. [Universitá di Roma La Sapienza', Via Scarpa 14-16, 00161 Rome (Italy)

    2014-06-19

    Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates.

  18. Gate-Defined Wires in HgTe Quantum Wells: From Majorana Fermions to Spintronics Johannes Reuther and Jason Alicea

    E-Print Network [OSTI]

    Yacoby, Amir

    Gate-Defined Wires in HgTe Quantum Wells: From Majorana Fermions to Spintronics Johannes Reuther and various spintronics applications based on gate-defined wires in HgTe quantum wells. Because of the Dirac­15] architectures, while not usually viewed from a spintronics lens, similarly rely crucially on spin manipulation

  19. Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause severe lifetime degradation in

    E-Print Network [OSTI]

    Lipasti, Mikko H.

    affect device performance and lead to timing violations; as well as gate-oxide wearout [3] which can probability of oxide breakdown, leading to a hard failure of a device that exceeds its intended (or targetedAbstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause

  20. Ambipolar graphene field effect transistors by local metal side gates J. F. Tian,1,2,a

    E-Print Network [OSTI]

    Chen, Yong P.

    the Dirac point where the valence and conduction bands meet, making graphene a zero-gap semiconductor. BothAmbipolar graphene field effect transistors by local metal side gates J. F. Tian,1,2,a L. A ambipolar graphene field effect transistors individually controlled by local metal side gates. The side

  1. Electrical Modulation of Ion Concentration in Dual-Gated Nanochannels Yang Liu, Qiushi Ran, and Robert W. Dutton

    E-Print Network [OSTI]

    Liu, Yang

    Electrical Modulation of Ion Concentration in Dual-Gated Nanochannels Yang Liu, Qiushi Ran simulations demonstrate the operating principles of using electrical biases in dual-gated nano potential applications range from fuel cells [11] to desalination [12]. Nevertheless, in contrast

  2. High temperature stability in lanthanum and zirconia-based gate dielectrics J.-P. Maria,a)

    E-Print Network [OSTI]

    Garfunkel, Eric

    High temperature stability in lanthanum and zirconia-based gate dielectrics J.-P. Maria,a) D for publication 19 June 2001 Gate dielectrics composed primarily of lanthana and zirconia were prepared. By controlling the oxygen partial pressure during heat treatment, lanthana and zirconia films could be protected

  3. The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study

    E-Print Network [OSTI]

    Tobin, Roger G.

    active transition metals such as platinum and palladium, show great promise as sen- sors for hydrogenThe role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh with nonporous platinum gates. The devices studied are shown to be sensitive both to hydrogen and to propene. All

  4. The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study

    E-Print Network [OSTI]

    Ghosh, Ruby N.

    active transition metals such as platinum and palladium, show great promise as sen- sors for hydrogenThe role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study Yung

  5. Possible realization of entanglement, logical gates, and quantum-information transfer with superconducting-quantum-interference-device qubits in cavity QED

    E-Print Network [OSTI]

    Yang, Chui-Ping; Chu, Shih-I; Han, Siyuan

    2003-04-17

    We present a scheme to achieve maximally entangled states, controlled phase-shift gate, and SWAP gate for two superconducting-quantum-interference-device (SQUID) qubits, by placing SQUIDs in a microwave cavity. We also show how to transfer quantum...

  6. An energy relaxation tolerant approach to quantum entanglement, information transfer, and gates with superconducting-quantum-interference-device qubits in cavity QED

    E-Print Network [OSTI]

    Yang, Chui-Ping; Chu, Shih-I; Han, Siyuan

    2004-03-31

    A scheme is proposed for realizing quantum entanglement, information transfer, CNOT gates, and SWAP gates with supercoiiducting-quantum-interference-device (SQUID) qubits in cavity QED. In the scheme, the two logical states of a qubit are the two...

  7. Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability

    SciTech Connect (OSTI)

    Fakhri, M.; Theisen, M.; Behrendt, A.; Görrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Wuppertal 42119 (Germany)

    2014-06-23

    Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al{sub 2}O{sub 3}/ZrO{sub 2} as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices with encapsulation.

  8. Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs

    E-Print Network [OSTI]

    Dimov, Ivan

    , in this paper we investigate the trapping of a single electron in the gate oxide of a 25nm transistor including and scattering phenomena. Keywords--Reliability; Tunneling; Scattering; NBTI; RTN; Wigner Function; charge-trapping. The evolution of an initial electron packet subject to the action of device channel potential and the oxide trap

  9. Temperature-Gated Thermal Rectifier for Active Heat Flow Control Kedar Hippalgaonkar,,

    E-Print Network [OSTI]

    Wu, Junqiao

    Temperature-Gated Thermal Rectifier for Active Heat Flow Control Jia Zhu,, Kedar Hippalgaonkar to develop advanced all-thermal solid-state devices that actively control heat flow without consuming other of solid-state active-thermal devices with a large rectification in the Rectifier state. This temperature

  10. Method and system for measuring gate valve clearances and seating force

    DOE Patents [OSTI]

    Casada, Donald A. (Knoxville, TN); Haynes, Howard D. (Knoxville, TN); Moyers, John C. (Oak Ridge, TN); Stewart, Brian K. (Burns, TN)

    1996-01-01

    Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner.

  11. Low-frequency electronic noise in the double-gate single-layer graphene transistors

    E-Print Network [OSTI]

    Low-frequency electronic noise in the double-gate single-layer graphene transistors G. Liu,1 W The authors report the results of an experimental investigation of the low-frequency noise in the double by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise

  12. Respiratory gating of anatomical optical coherence tomography images of the human

    E-Print Network [OSTI]

    Daume III, Hal

    , N. Zamel, and V. Hoffstein, "Pharyngeal cross-sectional area in normal men and women," J. Appl. Physiol. 61, 890-895 (1986). 8. P. P. Hsu, H. N. C. Han, Y. H. Chan, H. N. Tay, R. H. Brett, P. K. S. Lu demonstration of respiratory gating of aOCT airway data, and introduces a novel error measure to guide

  13. Implementation of Power Transmission Lines to Field Programmable Gate Array ICs for Managing Signal

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    Implementation of Power Transmission Lines to Field Programmable Gate Array ICs for Managing Signal employs power transmission lines (PTL) that supply power to integrated circuits instead of using is able to reduce SSN and enhance power and signal integrity. Pseudo-balanced power transmission line (PB

  14. NASA VLSI 2007 Mohanty & Kougianos 1 Impact of Gate Leakage on Mixed Signal

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    NASA VLSI 2007 Mohanty & Kougianos 1 Impact of Gate Leakage on Mixed Signal Design and Simulation dhruva@unt.edu #12;NASA VLSI 2007 Mohanty & Kougianos 2 Outline of the Talk Introduction Related works Remedy Conclusions #12;NASA VLSI 2007 Mohanty & Kougianos 3 Introduction Characterization of mixed signal

  15. Na K -pump ligands modulate gating of palytoxin-induced ion channels

    E-Print Network [OSTI]

    Gadsby, David

    Na K -pump ligands modulate gating of palytoxin-induced ion channels Pablo Artigas and David C (received for review September 26, 2002) The Na K pump is a ubiquitous P-type ATPase that binds three -ion occlusion to phosphorylation of the pump by ATP and of K -ion occlusion to its dephosphorylation

  16. Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors

    E-Print Network [OSTI]

    Dekker, Cees

    Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors Iddo-walled carbon nanotubes (SWNTs) and graphene can function as highly sensitive nanoscale (bio)sensors in solution. Here, we compare experimentally how SWNT and graphene transistors respond to changes in the composition

  17. Increasing efficiency of a linear-optical quantum gate using an electronic feed forward

    E-Print Network [OSTI]

    Mikova, Martina; Straka, Ivo; Micuda, Michal; Jezek, Miroslav; Dusek, Miloslav

    2011-01-01

    We have successfully used a fast electronic feed forward to increase the success probability of a linear optical implementation of a programmable phase gate from 25% to its theoretical limit of 50%. The feed forward applies a conditional unitary operation which changes the incorrect output states of the data qubit to the correct ones. The gate itself rotates an arbitrary quantum state of the data qubit around the z-axis of the Bloch sphere with the angle of rotation being fully determined by the state of the program qubit. The gate implementation is based on fiber optics components. Qubits are encoded into spatial modes of single photons. The signal from the feed-forward detector is led directly to a phase modulator using only a passive voltage divider. We have verified the increase of the success probability and characterized the gate operation by means of quantum process tomography. We have demonstrated that the use of the feed forward does not affect either the process fidelity or the output-state fideliti...

  18. Increasing efficiency of a linear-optical quantum gate using an electronic feed forward

    E-Print Network [OSTI]

    Martina Mikova; Helena Fikerova; Ivo Straka; Michal Micuda; Miroslav Jezek; Miloslav Dusek

    2011-11-14

    We have successfully used a fast electronic feed forward to increase the success probability of a linear optical implementation of a programmable phase gate from 25% to its theoretical limit of 50%. The feed forward applies a conditional unitary operation which changes the incorrect output states of the data qubit to the correct ones. The gate itself rotates an arbitrary quantum state of the data qubit around the z-axis of the Bloch sphere with the angle of rotation being fully determined by the state of the program qubit. The gate implementation is based on fiber optics components. Qubits are encoded into spatial modes of single photons. The signal from the feed-forward detector is led directly to a phase modulator using only a passive voltage divider. We have verified the increase of the success probability and characterized the gate operation by means of quantum process tomography. We have demonstrated that the use of the feed forward does not affect either the process fidelity or the output-state fidelities.

  19. Piezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing

    E-Print Network [OSTI]

    Huang, Yanyi

    -standing piezoelectric FET has potential applications like hearing aids, atomic force microscopy (AFM) cantileversPiezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing ZnO Wire Peng Fei report an external force triggered field-effect transistor based on a free-standing piezoelectric fine

  20. Fast gating in the Shaker K channel and the energy landscape of activation

    E-Print Network [OSTI]

    Bezanilla, Francisco

    Fast gating in the Shaker K channel and the energy landscape of activation Daniel Sigg , Francisco sec has been recorded with a high-speed patch­clamp setup. This fast component was found to be part-landscape inter- pretation of protein kinetics, the voltage and temperature depen- dence of the fast component may

  1. QualityGate SourceAudit: A Tool for Assessing the Technical Quality of Software

    E-Print Network [OSTI]

    Ferenc, Rudolf

    QualityGate SourceAudit: A Tool for Assessing the Technical Quality of Software Tibor Bakota Front the internal quality of the system over time. This phenomena is called software erosion, which results assessment of software quality. By monitoring the high-level technical quality of systems it is possible

  2. ERK2: a logical AND gate critical for drug-induced plasticity? Truncated title

    E-Print Network [OSTI]

    1 Title: ERK2: a logical AND gate critical for drug-induced plasticity? Truncated title: ERK2 signal-regulated kinase (ERK) plays an important role in the underlying molecular mechanisms. ERK. Blockade of ERK activation prevents long- lasting behavioral changes, including psychomotor sensitization

  3. A scalable quantum gate design for quantum computation I. A. Fedorov,1

    E-Print Network [OSTI]

    Ferguson, Thomas S.

    a scalable design for a quantum gate based on an electrostatically defined InP/InGaAs quantum dot system the artificial structures consisting of an array of quantum dots (QDs) at the required dimensions. With each QDP/InGaAs vertical quantum dot (QD) structure and investigate it in the few-electron regime for possible quan- tum

  4. Structural and electrical characterization of CoTiN metal gates

    SciTech Connect (OSTI)

    Wongpiya, Ranida; Ouyang, Jiaomin; Chung, Chia-Jung; Duong, Duc T.; Clemens, Bruce; Deal, Michael; Nishi, Yoshio

    2015-02-21

    As the gate size continues to decrease in nanoscale transistors, having metal gates with amorphous or near amorphous structures can potentially reduce grain-induced work function variation. Furthermore, amorphous materials are known to have superior diffusion barrier properties, which can help prevent work function change due to the diffusion of metals in contact with the gate. In this work we show that with the addition of cobalt, thin films of polycrystalline TiN become more amorphous with a smaller grain size. Co{sub x}(TiN){sub 1-x} films, where x?=?60–80%, appear to consist of nanocrystals embedded in an amorphous matrix, and are thermally stable with no significant crystallization up to an annealing temperature of at least 600?°C. Reducing the nitrogen gas flow ratio during sputter deposition from 9% to 2.5% further decreases the films' crystallinity, which is apparent by more sparse and even smaller nanocrystals. In addition to being partially amorphous, these CoTiN films also exhibit good thermal stability, low resistivity, low roughness, and have the potential for atomic layer deposition compatibility. Even though these materials are not completely amorphous, their small crystal size and amorphous matrix can potentially reduce work function variation and improve their diffusion barrier property. These properties make CoTiN a good candidate as a gate material for future nanoelectronic devices and technology.

  5. Gate Sizing and Vth Assignment for Asynchronous Circuits Using Lagrangian Relaxation

    E-Print Network [OSTI]

    Chu, Chris C.-N.

    constraints are beyond the ability of synchronous EDA tools to handle thus inferior results are generated performance. Recent asynchronous design flows try to directly leverage synchronous EDA tools to select gates, which have a lot of limitations due to the intrinsic difference between asynchronous and synchronous

  6. Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints

    E-Print Network [OSTI]

    Kolodny, Avinoam

    Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints Yoni in a fast circuit by the same factor does not yield an energy-efficient design, and we characterize efficient. A design implementation is considered to be energy efficient when it has the highest performance

  7. Graphene arch gate SiO2 shell silicon nanowire core field effect transistors

    E-Print Network [OSTI]

    Hwang, Sung Woo

    graphene into more complementary metal oxide semiconductor (CMOS)-friendly architectures. FurthermoreGraphene arch gate SiO2 shell silicon nanowire core field effect transistors J. E. Jin, J. H. Lee) metal-semiconductor field-effect transistors on single-crystal -Ga2O3 (010) substrates Appl. Phys. Lett

  8. Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate Ludovic Cassan1 Abstract: The article describes the hydraulic functioning of a mixed water level control hydro- mechanical of the model to reproduce the functioning of this complex hydro-mechanical system. CE database Subject headings

  9. Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology 

    E-Print Network [OSTI]

    Lu, Jiang

    2007-04-25

    A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped TaOx), has been studied for the application of the future generation metal-oxidesemiconductor field effect transistor (MOSFET). The film's electrical, chemical...

  10. An AggreGATE Network Abstraction for Mobile Devices Ganesh Ananthanarayanan, David Zats

    E-Print Network [OSTI]

    California at Berkeley, University of

    An AggreGATE Network Abstraction for Mobile Devices Ganesh Ananthanarayanan, David Zats Motivation Mobile devices increasingly have multiple interfaces (Cellular, Wi-Fi, Bluetooth) Proliferation of mobile decisions at the proxy/mobile device (Power, Cost ($$)) Single mobile device: Uploads to server using proxy

  11. Enhanced Biosensing Resolution with Foundry Fabricated Individually Addressable Dual-Gated ISFETs

    E-Print Network [OSTI]

    Bashir, Rashid

    small signals and increase the sensor accuracy when monitoring small pH dynamics in biological reactions reactions into electrical signals.1,2 In an ISFET, the gate region is exposed to an electrolyte, making,8,9 and ISFETs made with metal oxides and polymers are used to monitor biological activity.10

  12. CONGRESS BEIJING 2000 Question 79 (Gated Spillways and Other Controlled Release Facilities, and Dam Safety)

    E-Print Network [OSTI]

    Rahmeyer, William J.

    Facilities, and Dam Safety) d) Rehabilitation of Gated and Ungated Spillways THE DESIGN OF A FUSEGATE SYSTEM FOR INCREASING THE RESERVOIR CAPACITY OF TERMINUS DAM AIDED BY A FULLY FUNCTIONING PHYSICAL MODEL STUDY" Authors International SUMMARY A number of designs for increasing reservoir capacity without raising the dam embankment

  13. Electric field gating with ionic liquids Rajiv Misra, Mitchell McCarthy, and Arthur F. Hebarda

    E-Print Network [OSTI]

    Hebard, Arthur F.

    of 104 for thin conducting InOx films. The areal capacitances and field effect mobilities noticeably dielectrics and show that a significant field-gate effect on thin films of amor- phous composite InOx can material is a non- porous continuous thin metal film such as low carrier density InOx,10 then excess charge

  14. Gate Reliability Assessment for a Spillway Upgrade Design in Queensland, Australia USSD 2006 Conference Page 1

    E-Print Network [OSTI]

    Bowles, David S.

    then completed using risk-based design criteria to validate the design, and construction is in progress throughout Australia, the standard of safety was evaluated using a risk-based design validation modelGate Reliability Assessment for a Spillway Upgrade Design in Queensland, Australia USSD 2006

  15. SU-E-J-185: Gated CBCT Imaging for Positioning Moving Lung Tumor in Lung SBRT Treatment

    SciTech Connect (OSTI)

    Li, X; Li, T; Zhang, Y; Burton, S; Karlovits, B; Clump, D; Heron, D; Huq, M

    2014-06-01

    Purpose: Lung stereo-tactic body radiotherapy(SBRT) treatment requires high accuracy of lung tumor positioning during treatment, which is usually accomplished by free breathing Cone-Beam computerized tomography (CBCT) scan. However, respiratory motion induced image artifacts in free breathing CBCT may degrade such positioning accuracy. The purpose of this study is to investigate the feasibility of gated CBCT imaging for lung SBRT treatment. Methods: Six Lung SBRT patients were selected for this study. The respiratory motion of the tumors ranged from 1.2cm to 3.5cm, and the gating windows for all patients were set between 35% and 65% of the respiratory phases. Each Lung SBRT patient underwent free-breathing CBCT scan using half-fan scan technique. The acquired projection images were transferred out for off-line analyses. An In-house semi-automatic algorithm was developed to trace the diaphragm movement from those projection images to acquire a patient's specific respiratory motion curve, which was used to correlate respiratory phases with each projection image. Afterwards, a filtered back-projection algorithm was utilized to reconstruct the gated CBCT images based on the projection images only within the gating window. Results: Target volumes determined by free breathing CBCT images were 71.9%±72% bigger than the volume shown in gated CBCT image. On the contrary, the target volume differences between gated CBCT and planning CT images at exhale stage were 5.8%±2.4%. The center to center distance of the targets shown in free breathing CBCT and gated CBCT images were 9.2±8.1mm. For one particular case, the superior boundary of the target was shifted 15mm between free breathing CBCT and gated CBCT. Conclusion: Gated CBCT imaging provides better representation of the moving lung tumor with less motion artifacts, and has the potential to improve the positioning accuracy in lung SBRT treatment.

  16. Regulation of N-type Voltage-Gated Calcium Channels and Presynaptic Function by Cyclin-Dependent Kinase 5

    E-Print Network [OSTI]

    Su, Susan C.

    N-type voltage-gated calcium channels localize to presynaptic nerve terminals and mediate key events including synaptogenesis and neurotransmission. While several kinases have been implicated in the modulation of calcium ...

  17. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  18. APPLIED PHYSICS REVIEWS Ultrathin ,,4 nm... SiO2 and SiON gate dielectric layers for silicon

    E-Print Network [OSTI]

    Garfunkel, Eric

    . . . . . . . . . . . . . . . . . . . . . . . . . . 2078 4. Neutral electron trap generation. . . . . . . . . . 2079 5. Stress-induced leakage current. . . . . . . . . . . . . . . . . . . . . . 2065 C. Ion beam analysis. . . . . . . . . . . . . . . . . . . . . . . . . 2067 D. Electron microscopy. . . . . . . . . . . . . . . . . . . 2075 1. C­V measurements. . . . . . . . . . . . . . . . . . . . 2075 2. Gate tunnel current

  19. 224 IEEE ELECTRON DEVICE LETTERS, VOL. 23, NO. 4, APRIL 2002 Gate Length Dependent Polysilicon Depletion Effects

    E-Print Network [OSTI]

    Dutton, Robert W.

    - tribution effect, MOSFET, polydepletion, polysilicon depletion ef- fect. I. INTRODUCTION IN THE dual n -p impurity penetration through the gate oxide, while maintaining the required source/drain junction depths [2

  20. IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 4, NO. 5, SEPTEMBER 2005 599 Quantum Interference in Fully Depleted Tri-Gate

    E-Print Network [OSTI]

    Gilbert, Matthew

    and drain dimen- sions. A uniform 1-nm oxide layer covers the top and sides of the device to isolate the gates from the semiconductor. Under the device is a 100-nm-thick oxide layer. This device is studied

  1. Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan- Dearborn

    Broader source: Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  2. A review of the use and potential of the GATE Monte Carlo simulation code for radiation therapy and dosimetry applications

    SciTech Connect (OSTI)

    Sarrut, David; Université Lyon 1; Centre Léon Bérard ; Bardiès, Manuel; Marcatili, Sara; Mauxion, Thibault; Boussion, Nicolas; Freud, Nicolas; Létang, Jean-Michel; Jan, Sébastien; Maigne, Lydia; Perrot, Yann; Pietrzyk, Uwe; Robert, Charlotte; and others

    2014-06-15

    In this paper, the authors' review the applicability of the open-source GATE Monte Carlo simulation platform based on the GEANT4 toolkit for radiation therapy and dosimetry applications. The many applications of GATE for state-of-the-art radiotherapy simulations are described including external beam radiotherapy, brachytherapy, intraoperative radiotherapy, hadrontherapy, molecular radiotherapy, and in vivo dose monitoring. Investigations that have been performed using GEANT4 only are also mentioned to illustrate the potential of GATE. The very practical feature of GATE making it easy to model both a treatment and an imaging acquisition within the same frameworkis emphasized. The computational times associated with several applications are provided to illustrate the practical feasibility of the simulations using current computing facilities.

  3. Cerebellar Purkinje cell death in the P/Q -type voltage-gated calcium ion channel mutant mouse, leaner 

    E-Print Network [OSTI]

    Frank-Cannon, Tamy Catherine

    2006-04-12

    . The leaner mutation causes reduced calcium ion influx upon activation of P/Q-type voltage-gated calcium channels. This disrupts calcium homeostasis and leads to a loss of cerebellar neurons, including cerebellar Purkinje cells. Because of its similarities...

  4. Mechanically induced two-qubit gates and maximally entangled states for single electron spins in a carbon nanotube

    E-Print Network [OSTI]

    Heng Wang; Guido Burkard

    2015-08-10

    We theoretically analyze a system where two electrons are trapped separately in two quantum dots on a suspended carbon nanotube (CNT), subject to external ac electric driving. An indirect mechanically-induced coupling of two distant single electron spins is induced by the interaction between the spins and the mechanical motion of the CNT. We show that a two-qubit iSWAP gate and arbitrary single-qubit gates can be obtained from the intrinsic spin-orbit coupling. Combining the iSWAP gate and single-qubit gates, maximally entangled states of two spins can be generated in a single step by varying the frequency and the strength of the external electric driving field. The spin-phonon coupling can be turned off by electrostatically shifting the electron wave function on the nanotube.

  5. Neurodegeneration in cerebellar granule cells of p/q type voltage gated calcium channel mutant leaner mice 

    E-Print Network [OSTI]

    Bawa, Bhupinder

    2009-05-15

    Mutations of the ?1A subunit of CaV 2.1 voltage gated calcium (VGCC) channels are responsible for several inherited disorders affecting humans, including familial hemiplegic migraine, episodic ataxia type and spinocerebellar ataxia type. The leaner...

  6. 2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

    ScienceCinema (OSTI)

    Chu, Steven (U.S. Department of Energy Secretary); Gates, Bill (Microsoft, Chairman); Podesta, John (Center for American Progress, Chair and Counselor)

    2012-03-21

    The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

  7. A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

    E-Print Network [OSTI]

    D. M. Zajac; T. M. Hazard; X. Mi; K. Wang; J. R. Petta

    2015-02-05

    We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

  8. A communication-efficient nonlocal measurement with application to communication complexity and bipartite gate capacities

    E-Print Network [OSTI]

    Aram W. Harrow; Debbie W. Leung

    2011-03-04

    Two dual questions in quantum information theory are to determine the communication cost of simulating a bipartite unitary gate, and to determine their communication capacities. We present a bipartite unitary gate with two surprising properties: 1) simulating it with the assistance of unlimited EPR pairs requires far more communication than with a better choice of entangled state, and 2) its communication capacity is far lower than its capacity to create entanglement. This suggests that 1) unlimited EPR pairs are not the most general model of entanglement assistance for two-party communication tasks, and 2) the entangling and communicating abilities of a unitary interaction can vary nearly independently. The technical contribution behind these results is a communication-efficient protocol for measuring whether an unknown shared state lies in a specified rank-one subspace or its orthogonal complement.

  9. Attosecond x-ray source generation from two-color polarized gating plasmonic field enhancement

    SciTech Connect (OSTI)

    Feng, Liqiang [College of Science, Liaoning University of Technology, Jinzhou 121000 (China) [College of Science, Liaoning University of Technology, Jinzhou 121000 (China); State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Yuan, Minghu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China)] [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Chu, Tianshu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China) [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Institute for Computational Sciences and Engineering, Laboratory of New Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China)

    2013-12-15

    The plasmonic field enhancement from the vicinity of metallic nanostructures as well as the polarization gating technique has been utilized to the generation of the high order harmonic and the single attosecond x-ray source. Through numerical solution of the time-dependent Schrödinger equation, for moderate the inhomogeneity and the polarized angle of the two fields, we find that not only the harmonic plateau has been extended and enhanced but also the single short quantum path has been selected to contribute to the harmonic. As a result, a series of 50 as pulses around the extreme ultraviolet and the x-ray regions have been obtained. Furthermore, by investigating the other parameters effects on the harmonic emission, we find that this two-color polarized gating plasmonic field enhancement scheme can also be achieved by the multi-cycle pulses, which is much better for experimental realization.

  10. Air-gap gating of MgZnO/ZnO heterostructures

    SciTech Connect (OSTI)

    Tambo, T.; Falson, J. Kozuka, Y.; Maryenko, D.; Tsukazaki, A.; Kawasaki, M.

    2014-08-28

    The adaptation of “air-gap” dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5??m. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3?mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.

  11. Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

    SciTech Connect (OSTI)

    Chiou, Uio-Pu; Pan, Fu-Ming, E-mail: fmpan@faculty.nctu.edu.tw [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); Shieh, Jia-Min, E-mail: jmshieh@narlabs.org.tw, E-mail: jmshieh@faculty.nctu.edu.tw [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China) [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China); Yang, Chih-Chao [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China)] [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Huang, Wen-Hsien [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China) [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Kao, Yo-Tsung [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)] [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)

    2013-11-11

    We fabricated nano-crystalline Si (nc-Si:H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (?{sub FE}) and adjustable threshold voltages (V{sub th}). The nc-Si:H channel and source/drain (S/D) of the multilayered TFT were deposited at 375?°C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high ?{sub FE} of 370 cm{sup 2}/V-s, a steep subthreshold slope of 90?mV/decade, and a low V{sub th} of ?0.64?V. When biased with the double-gate driving mode, the device shows a tunable V{sub th} value extending from ?1?V up to 2.7?V.

  12. Gated frequency-resolved optical imaging with an optical parametric amplifier for medical applications

    SciTech Connect (OSTI)

    Cameron, S.M.; Bliss, D.E.

    1997-02-01

    Implementation of optical imagery in a diffuse inhomogeneous medium such as biological tissue requires an understanding of photon migration and multiple scattering processes which act to randomize pathlength and degrade image quality. The nature of transmitted light from soft tissue ranges from the quasi-coherent properties of the minimally scattered component to the random incoherent light of the diffuse component. Recent experimental approaches have emphasized dynamic path-sensitive imaging measurements with either ultrashort laser pulses (ballistic photons) or amplitude modulated laser light launched into tissue (photon density waves) to increase image resolution and transmissive penetration depth. Ballistic imaging seeks to compensate for these {open_quotes}fog-like{close_quotes} effects by temporally isolating the weak early-arriving image-bearing component from the diffusely scattered background using a subpicosecond optical gate superimposed on the transmitted photon time-of-flight distribution. The authors have developed a broadly wavelength tunable (470 nm -2.4 {mu}m), ultrashort amplifying optical gate for transillumination spectral imaging based on optical parametric amplification in a nonlinear crystal. The time-gated image amplification process exhibits low noise and high sensitivity, with gains greater than 104 achievable for low light levels. We report preliminary benchmark experiments in which this system was used to reconstruct, spectrally upcovert, and enhance near-infrared two-dimensional images with feature sizes of 65 {mu}m/mm{sup 2} in background optical attenuations exceeding 10{sup 12}. Phase images of test objects exhibiting both absorptive contrast and diffuse scatter were acquired using a self-referencing Shack-Hartmann wavefront sensor in combination with short-pulse quasi-ballistic gating. The sensor employed a lenslet array based on binary optics technology and was sensitive to optical path distortions approaching {lambda}/100.

  13. Fast geometric gate operation of superconducting charge qubits in circuit QED

    E-Print Network [OSTI]

    Zheng-Yuan Xue

    2011-07-09

    A scheme for coupling superconducting charge qubits via a one-dimensional superconducting transmission line resonator is proposed. The qubits are working at their optimal points, where they are immune to the charge noise and possess long decoherence time. Analysis on the dynamical time evolution of the interaction is presented, which is shown to be insensitive to the initial state of the resonator field. This scheme enables fast gate operation and is readily scalable to multiqubit scenario.

  14. Fast cooling of trapped ions using the dynamical Stark shift gate

    E-Print Network [OSTI]

    A. Retzker; M. B. Plenio

    2006-07-27

    A laser cooling scheme for trapped ions is presented which is based on the fast dynamical Stark shift gate, described in [Jonathan etal, PRA 62, 042307]. Since this cooling method does not contain an off resonant carrier transition, low final temperatures are achieved even in traveling wave light field. The proposed method may operate in either pulsed or continuous mode and is also suitable for ion traps using microwave addressing in strong magnetic field gradients.

  15. Simultaneous gates in frequency-crowded multi-level systems using fast, robust analytic control shapes

    E-Print Network [OSTI]

    L. S. Theis; F. Motzoi; F. K. Wilhelm

    2015-09-14

    We present a few-parameter ansatz for pulses to implement arbitrary simultaneous single-qubit rotations in frequency-crowded multi-level systems. Specifically, we consider a system of two qutrits whose working and leakage transitions suffer from spectral crowding (detuned by $\\delta$). In order to achieve precise controllability, we make use of two driving fields (each having two quadratures) at two different tones to implement arbitrary simultaneous rotations. Expanding the waveforms in terms of Hanning windows, we show how analytic pulses containing smooth and composite-pulse features can easily achieve gate errors $<10^{-4}$ and considerably outperform known adiabatic techniques. Moreover, we find a generalization of the WahWah method by Schutjens et al. [Phys. Rev. A 88, 052330 (2013)] that allows precise separate single-qubit rotations for all gate times beyond a quantum speed limit. We find in all cases a quantum speed limit $\\sim 2\\pi/\\delta$ for the gate time and show that our pulses are robust against variations in system parameters and filtering due to transfer functions, making them suitable for experimental implementations.

  16. Suspended InAs nanowire gate-all-around field-effect transistors

    SciTech Connect (OSTI)

    Li, Qiang; Huang, Shaoyun, E-mail: syhuang@pku.edu.cn, E-mail: hqxu@pku.edu.cn; Wang, Jingyun [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Pan, Dong; Zhao, Jianhua [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Xu, H. Q., E-mail: syhuang@pku.edu.cn, E-mail: hqxu@pku.edu.cn [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Division of Solid-State Physics, Lund University, Box 118, Lund S-221 00 (Sweden)

    2014-09-15

    Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I{sub on} of ?10??A and an on-off current ratio I{sub on}/I{sub off} of as high as 10{sup 6} at source-drain bias voltage of 50?mV and gate length of 1??m with a gate underlap spacing of 1??m from the source and from the drain. At low temperatures, the on-state current I{sub on} is only slightly reduced, while the ratio I{sub on}/I{sub off} is increased to 10{sup 7}. The field-effect mobility in the nanowire channels is also investigated and found to be ?1500?cm{sup 2}/V s at room temperature and ?2000?cm{sup 2}/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires.

  17. High repetition rate laser-induced breakdown spectroscopy using acousto-optically gated detection

    SciTech Connect (OSTI)

    Po?ízka, Pavel [BAM Federal Institute for Materials Research and Testing, Richard-Willstätter-Straße 11, D-12489 Berlin (Germany); Institute of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technicka 2896/2, 61669 Brno (Czech Republic); Klessen, Benjamin; Gornushkin, Igor; Riedel, Jens [BAM Federal Institute for Materials Research and Testing, Richard-Willstätter-Straße 11, D-12489 Berlin (Germany); Kaiser, Jozef [Institute of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technicka 2896/2, 61669 Brno (Czech Republic); Panne, Ulrich [BAM Federal Institute for Materials Research and Testing, Richard-Willstätter-Straße 11, D-12489 Berlin (Germany); Chemistry Department, Humboldt Universität zu Berlin, Brook-Taylor-Straße 2, D-12489 Berlin (Germany)

    2014-07-15

    This contribution introduces a new type of setup for fast sample analysis using laser-induced breakdown spectroscopy (LIBS). The novel design combines a high repetition rate laser (up to 50 kHz) as excitation source and an acousto-optical modulator (AOM) as a fast switch for temporally gating the detection of the emitted light. The plasma radiation is led through the active medium of the AOM where it is diffracted on the transient ultrasonic Bragg grid. The diffracted radiation is detected by a compact Czerny-Turner spectrometer equipped with a CCD line detector. Utilizing the new combination of high repetition rate lasers and AOM gated detection, rapid measurements with total integration times of only 10 ms resulted in a limit of detection (LOD) of 0.13 wt.% for magnesium in aluminum alloys. This short integration time corresponds to 100 analyses/s. Temporal gating of LIP radiation results in improved LODs and consecutively higher sensitivity of the LIBS setup. Therefore, an AOM could be beneficially utilized to temporally detect plasmas induced by high repetition rate lasers. The AOM in combination with miniaturized Czerny-Turner spectrometers equipped with CCD line detectors and small footprint diode pumped solid state lasers results in temporally gateable compact LIBS setups.

  18. Strip Velocity Measurements for Gated X-Ray Imagers Using Short Pulse Lasers

    SciTech Connect (OSTI)

    Ross, P. W. [NSTec; Cardenas, M. [NSTec; Griffin, M. [NSTec; Mead, A. [NSTec; Silbernagel, C. T. [NSTec; Bell, P. [LLNL; Haque, S. H. [UNR

    2013-09-01

    Strip velocity measurements of gated X-ray imagers are presented using an ultra-short pulse laser. Obtaining time-resolved X-ray images of inertial confinement fusion shots presents a difficult challenge. One diagnostic developed to address this challenge is the gated X-ray imagers. The gated X-ray detectors (GXDs) developed by Lawrence Livermore National Laboratory and Los Alamos National Laboratory use a microchannel plate (MCP) coated with a gold strip line, which serves as a photocathode. GXDs are used with an array of pinholes, which image onto various parts of the GXD image plane. As the pulse sweeps over the strip lines, it creates a time history of the event with consecutive images. In order to accurately interpret the timing of the images obtained using the GXDs, it is necessary to measure the propagation of the pulse over the strip line. The strip velocity was measured using a short pulse laser with a pulse duration of approximately 1-2 ps. The 200nm light from the laser is used to illuminate the GXD MCP. The laser pulse is split and a retroreflective mirror is used to delay one of the legs. By adjusting the distance to the mirror, one leg is temporally delayed compared to the reference leg. The retroreflective setup is calibrated using a streak camera with a 1 ns full sweep. Resolution of 0.5 mm is accomplished to achieve a temporal resolution of ~5 ps on the GXD strip line.

  19. Crystal structure of a two-subunit TrkA octameric gating ring assembly

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Deller, Marc C.; Johnson, Hope A.; Miller, Mitchell D.; Spraggon, Glen; Elsliger, Marc -André; Wilson, Ian A.; Lesley, Scott A.; Ye, Sheng

    2015-03-31

    The TM1088 locus of T. maritima codes for two proteins designated TM1088A and TM1088B, which combine to form the cytosolic portion of a putative Trk K? transporter. We report the crystal structure of this assembly to a resolution of 3.45 Å. The high resolution crystal structures of the components of the assembly, TM1088A and TM1088B, were also determined independently to 1.50 Å and 1.55 Å, respectively. The TM1088 proteins are structurally homologous to each other and to other K? transporter proteins, such as TrkA. These proteins form a cytosolic gating ring assembly that controls the flow of K? ions acrossmore »the membrane. TM1088 represents the first structure of a two-subunit Trk assembly. Despite the atypical genetics and chain organization of the TM1088 assembly, it shares significant structural homology and an overall quaternary organization with other single-subunit K? gating ring assemblies. This structure provides the first structural insights into what may be an evolutionary ancestor of more modern single-subunit K? gating ring assemblies.« less

  20. A SYSTEM FOR COLLECTING LARGE NUMBERS OF LIVE

    E-Print Network [OSTI]

    in a healthy condition. The shrimp of greatest interest for pond culture include the tropical and subtrop- ical flow with sluice gates built into the dikes of ponds (Wal- ford, 1958). This method, however, also im. The rings were attached with bayonet fittings to the collecting funnels. Both the mouth and tail of the nets

  1. Effect of Flow Pulses on Degradation Downstream of Hapcheon Dam, South Korea

    E-Print Network [OSTI]

    Julien, Pierre Y.

    Effect of Flow Pulses on Degradation Downstream of Hapcheon Dam, South Korea Young Ho Shin1 and Pierre Y. Julien, M.ASCE2 Abstract: The changes in channel geometry downstream of Hapcheon Dam, South sluice gate operations affect the 45-km reach of the Hwang River between the Hapcheon Reregulation Dam

  2. Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

    E-Print Network [OSTI]

    Chobpattana, Varistha; Mates, Thomas E.; Mitchell, William J.; Zhang, Jack Y.; Stemmer, Susanne

    2013-01-01

    0.53 Ga 0.47 As by atomic layer deposition. We discuss thetreatment prior to atomic layer deposition (ALD) of gate

  3. Universal hyperparallel hybrid photonic quantum gates with dipole-induced transparency in the weak-coupling regime

    E-Print Network [OSTI]

    Bao-Cang Ren; Guan-Yu Wang; Fu-Guo Deng

    2015-04-01

    We present the dipole induced transparency (DIT) of a diamond nitrogen-vacancy center embedded in a photonic crystal cavity coupled to two waveguides, and it is obvious with the robust and flexible reflectance and transmittance difference of circularly polarized lights between the uncoupled and the coupled cavities even in the bad cavity regime (the Purcell regime). With this DIT, we propose two universal hyperparallel hybrid photonic quantum logic gates, including a hybrid hyper-controlled-not gate and a hybrid hyper-Toffoli gate, on photon systems in both the polarization and the spatial-mode degrees of freedom (DOFs), which are equal to two identical quantum logic gates operating simultaneously on the systems in one DOF. They can be used to perform more quantum operations with less resources in the quantum information protocols with multi-qubit systems in several DOFs, which may depress the resources consumed and the photonic dissipation. Moreover, they are more robust against asymmetric environment noise in the weak-coupling regime, compared with the integration of two cascaded quantum logic gates in one DOF.

  4. SU-E-J-59: Effective Adaptive DMLC Gated Radiotherapy with OAR Sparing

    SciTech Connect (OSTI)

    Chen, Y; Wu, H; Zhou, Z; Sandison, MinGeorge

    2014-06-01

    Purpose: Patient respiratory motion degrades the effectiveness of cancer radiation treatment. Advanced respiratory gating delivers radiation dose accurately yet with elongated treatment time. The goal of this research is to propose a novel adaptive dMLC dynamic gating with high delivery efficiency and precision. Methods: The dose delivery of dMLC is aided by simultaneous tracking of tumor and organ at risk (OAR). The leaf opening/closing will follow the motion trajectory of the tumor while sparing the OAR. The treatment beam turns on only when there is no overlapping between OAR and tumor in BEV. A variety of evaluation metrics were considered and calculated, including duty cycle, beam toggling rate, and direct irradiation avoidance to OAR, under various combinations of different tumor margins and the distance between the centers of the tumor and OAR in BEV (expressed as dx). Results: Retrospective simulation was performed to investigate the feasibility and superiority of this technique using four groups of synchronized tumor and OAR motion data. The simulation results indicate that the tumor and OAR motion patterns and their relative positions are the dominant influential factors. The duty cycle can be greater than 96.71% yet can be as low as 6.69% depending different motion groups. This proposed technique provides good OAR protection, especially for such cases with low duty cycle for which as high as 77.71% maximal direct irradiation to OAR can be spared. Increasing dx improves the duty cycle (treatment efficiency) and provides better OAR volume sparing, whereas, that of the tumor margins has the opposite influence. Conclusion: This real-time adaptive dMLC gated radiation treatment with synchronous tumor and OAR tracking has inherent accurate dose delivery to tumor with reduced treatment time. In addition, the OAR protection capability make it an outstanding potential treatment strategy for mobile tumors.

  5. Cloning and first functional characterization of a plant cyclic nucleotide-gated cation channel

    SciTech Connect (OSTI)

    Leng, Q.; Mercier, R.W.; Yao, W.; Berkowitz, G.A.

    1999-11-01

    Cyclic nucleotide-gated (cng) non-selective cation channels have been cloned from a number of animal systems. These channels are characterized by direct gating upon cAMO or cGMO binding to the intracellular portion of the channel protein, which leads to an increase in channel conductance. Animal cng channels are involved in signal transduction systems; they translate stimulus-induced changes in cytosolic cyclic nucleotide into altered cell membrane potential and/or cation flux as part of a signal cascade pathway. Putative plant homologs of animal cng channels have been identified. However, functional characterization (i.e., demonstration of cyclic-nucleotide-dependent ion currents) of a plant cng channel has not yet been accomplished. The authors report the cloning and first functional characterization of a plant member of this family of ion channels. The Arabidopsis cDNA AtCNGC2 encodes a polypeptide with deduced homology to the {alpha}-subunit of animal channels, and facilitates cyclic nucleotide-dependent cation currents upon expression in a number of heterologous systems. AtCNGC2 expression in a yeast mutant lacking a low-affinity K{sup +} uptake system complements growth inhibition only when lipophilic nucleotides are present in the culture medium. Voltage clamp analysis indicates that Xenopus lawvis oocytes injected with AtCNGC2 cRNA demonstrate cyclic-nucleotide-dependent, inward-rectifying K{sup +} currents. Human embryonic kidney cells (HEK293) transfected with AtCNGC2 cDNA demonstrate increased permeability to Ca{sup 2+} only in the presence of lipophilic cyclic nucleotides. The evidence presented here supports the functional classification of AtCNGC2 as a cyclic-nucleotide-gated cation channel, and presents the first direct evidence identifying a plant member of this ion channel family.

  6. General quantum two-players games, their gate operators and Nash equilibria

    E-Print Network [OSTI]

    Katarzyna Bolonek-Laso?

    2015-03-30

    The two-players $N$ strategies games quantized according to the Eisert-Lewenstein-Wilkens scheme (Phys. Rev. Lett. 83 (1999), 3077) are considered. Group theoretical methods are applied to the problem of finding a general form of gate operators (entanglers) under the assumption that the set of classical pure strategies is contained in the set of pure quantum ones. The role of the stability group of the initial state of the game is stressed. As an example, it is shown that the maximally entangled games do not admit nontrivial pure Nash strategies. The general arguments are supported by explicit computations performed in the three strategies case.

  7. Characterization of voltage-gated ionic currents in a peripheral sensory neuron in larval Drosophila

    E-Print Network [OSTI]

    Nair, Amit; Bate, Michael; Pulver, Stefan R

    2010-06-02

    and Shab K+ currents to neuronal firing patterns in Drosophila. J Neurophysiol 2007, 97(1):780-794. 2. O'Dowd DK, Aldrich RW: Voltage-clamp analysis of sodium channels in wild-type and mutant Drosophila neurons. J Neurosci 1988, 8(10):3633-3643. 3. O... 'Dowd DK: Voltage-gated currents and firing properties of embryonic Drosophila neurons grown in a chemically defined medium. J Neurobiol 1995, 27(1):113-126. 4. Saito M, Wu CF: Ionic channels in cultured Drosophila neurons. EXS 1993, 63:366-389. 5...

  8. Field programmable gate array-assigned complex-valued computation and its limits

    SciTech Connect (OSTI)

    Bernard-Schwarz, Maria, E-mail: maria.bernardschwarz@ni.com [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria); Zwick, Wolfgang; Klier, Jochen [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Wenzel, Lothar [National Instruments, 11500 N MOPac Expy, Austin, Texas 78759 (United States); Gröschl, Martin [Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria)

    2014-09-15

    We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.

  9. Surface mobility near threshold and other parameters of insulated gate field effect transistors

    E-Print Network [OSTI]

    Gnadinger, Alfred P.

    1970-01-01

    in detail. The IGFETs are made on standard 1­V diameter n­type silicon wafers with a starting resistivity of 3 ­ 7 ohm­cm corresponding to a 1 fx ~3 1 s —3 doping density of 7 x 10 cm to 1.5 x 10 cm . After cleaning, the... MOBILITY NEAR THRESHOLD AND OTHER PARAMETERS OF INSULATED GATE FIELD EFFECT TRANSISTORS BY Alfred P. Gnadinger Dipl. El. Ing. ETH Swiss Federal Institute of Technology, Zurich, 1965 M.S.E.E, University of Kansas, Lawrence, 1968 Submitted to the Department of Electrical v Engineering...

  10. Chi-Nu "Gate Review" (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing Bacteria (TechnicalTransmission,TextitSciTechin ComplexChi-Nu "Gate Review"

  11. Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

    SciTech Connect (OSTI)

    Goswami, Arunesh; Trew, Robert J.; Bilbro, Griff L.

    2014-10-28

    A physics based model of the gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors is demonstrated. The model is based on the space charge limited current flow dominated by the effects of deep traps in the InAlN surface layer. The model predicts accurately the gate-leakage measurement data of the N-polar InAlN/GaN device with InAlN cap layer. In the pinch-off state, the gate leakage current conduction through the surface of the device in the drain access region dominates the current flow through the two dimensional electron gas channel. One deep trap level and two levels of shallow traps are extracted by fitting the model results with measurement data.

  12. Extremely scaled high-k/In?.??Ga?.??As gate stacks with low leakage and low interface trap densities

    SciTech Connect (OSTI)

    Chobpattana, Varistha; Mikheev, Evgeny; Zhang, Jack Y.; Mates, Thomas E.; Stemmer, Susanne

    2014-09-28

    Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma and tetrakis(dimethylamino)titanium, allows for HfO? and ZrO? gate stacks with extremely high accumulation capacitance densities of more than 5 ?F/cm? at 1 MHz, low leakage current, low frequency dispersion, and low midgap interface trap densities (10¹²cm?²eV?¹range). Using x-ray photoelectron spectroscopy, we show that the interface contains TiO? and small quantities of In?O?, but no detectable Ga- or As-oxides, or As-As bonding. The results allow for insights into the microscopic mechanisms that control leakage and frequency dispersion in high-k/III-V gate stacks.

  13. Gate Access

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclearlong version)short

  14. Electrical behavior of atomic layer deposited high quality SiO{sub 2} gate dielectric

    SciTech Connect (OSTI)

    Pradhan, Sangram K.; Tanyi, Ekembu K.; Skuza, Jonathan R.; Xiao, Bo; Pradhan, Aswini K., E-mail: apradhan@nsu.edu [Center for Materials Research, Norfolk State University, 700 Park Ave., Norfolk, Virginia 23504 (United States)

    2015-01-01

    Comprehensive and systematic electrical studies were performed on fabrication of high quality SiO{sub 2} thin films MOS capacitor using the robust, novel, and simple atomic layer deposition (ALD) technique using highly reactive ozone and tris (dimethylamino) silane (TDMAS) precursors. Ideal capacitance–voltage curve exhibits a very small frequency dispersion and hysteresis behavior of the SiO{sub 2} MOS capacitor grown at 1?s TDMAS pulse, suggesting excellent interfacial quality and purity of the film as probed using x-ray photoelectron studies. The flat-band voltage of the device shifted from negative toward positive voltage axis with increase of TDMAS pulses from 0.2 to 2 s. Based on an equivalent oxide thickness point of view, all SiO{sub 2} films have gate leakage current density of (5.18?×?10{sup ?8} A/cm{sup 2}) as well as high dielectric break down fields of more than (?10 MV/cm), which is better and comparable to that of thermally grown SiO{sub 2} at temperatures above 800?°C. These appealing electrical properties of ALD grown SiO{sub 2} thin films enable its potential applications such as high-quality gate insulators for thin film MOS transistors, as well as insulators for sensor and nanostructures on nonsilicon substrates.

  15. Kinetic gating mechanism of DNA damage recognition by Rad4/XPC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chen, Xuejing; Velmurugu, Yogambigai; Zheng, Guanqun; Park, Beomseok; Shim, Yoonjung; Kim, Youngchang; Liu, Lili; Van Houten, Bennett; He, Chuan; Ansari, Anjum; et al

    2015-01-06

    The xeroderma pigmentosum C (XPC) complex initiates nucleotide excision repair by recognizing DNA lesions before recruiting downstream factors. How XPC detects structurally diverse lesions embedded within normal DNA is unknown. Here we present a crystal structure that captures the yeast XPC orthologue (Rad4) on a single register of undamaged DNA. The structure shows that a disulphide-tethered Rad4 flips out normal nucleotides and adopts a conformations similar to that seen with damaged DNA. Contrary to many DNA repair enzymes that can directly reject non-target sites as structural misfits, our results suggest that Rad4/XPC uses a kinetic gating mechanism whereby lesion selectivitymore »arises from the kinetic competition between DNA opening and the residence time of Rad4/XPC per site. This mechanism is further supported by measurements of Rad4-induced lesion-opening times using temperature-jump pertubation spectroscopy. Kinetic gating may be a general mechanism used by site-specific DNA-binding proteins to minimize time-consuming interrogations of non-target sites.« less

  16. Tuning the Gate Opening Pressure of Metal Organic Frameworks (MOFs) for the Selective Separation of Hydro-carbons

    E-Print Network [OSTI]

    Nijem, Nour; Canepa, Pieremanuele; Marti, Anne; Balkus,, Kenneth J; Thonhauser, T; Li, Jing; Chabal, Yves J; 10.1021/ja305754f

    2012-01-01

    Separation of hydrocarbons is one of the most energy demanding processes. The need to develop materials for the selective adsorption of hydrocarbons, under reasonable conditions, is therefore of paramount importance. This work unveils unexpected hydrocarbon selectivity in a flexible Metal Organic Framework (MOF), based on differences in their gate opening pressure. We show selectivity dependence on both chain length and specific framework-gas interaction. Combining Raman spectroscopy and theoretical van der Waals Density Functional (vdW-DF) calculations, the separation mechanisms governing this unexpected gate opening behavior are revealed.

  17. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 19, NO. 4, APRIL 2009 215 The Island-Gate Varactor--A High-Q MOS

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 19, NO. 4, APRIL 2009 215 The Island varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected) and the 77 GHz automotive radar systems. One key circuit block that is needed for both receiver

  18. Thermoelectric properties of electrically gated bismuth telluride nanowires I. Bejenari,1,2,* V. Kantser,2, and A. A. Balandin1,

    E-Print Network [OSTI]

    Thermoelectric properties of electrically gated bismuth telluride nanowires I. Bejenari,1,2,* V can modify thermoelectric properties of intrinsic, n-type and p-type bismuth telluride nanowires, and thermoelectric figure of merit on the nanowire thickness, gate voltage, and excess hole electron concentration

  19. Update and Expansion of the Center of Automotive Technology Excellence Under the Graduate Automotive Technology Education (GATE) Program at the University of Tennessee, Knoxville

    SciTech Connect (OSTI)

    Irick, David

    2012-08-30

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its seventh year of operation under this agreement, its thirteenth year in total. During this period the Center has involved eleven GATE Fellows and three GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center’s focus area: Advanced Hybrid Propulsion and Control Systems. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $2,000,000.

  20. Time-resolved imaging with OKE-based time-gate: enhancement in spatial resolution using low-coherence ultra-short illumination

    E-Print Network [OSTI]

    Purwar, Harsh; Rozé, Claude; Blaisot, Jean-Bernard

    2015-01-01

    We propose a collinear optical Kerr effect (OKE) based time-gate configuration with low coherence illumination source, derived from the supercontinuum (SC) generated by focusing the femtosecond laser pulses inside water. At first the spectral broadening in SC generation and corresponding changes in its coherence properties are studied and then a narrow band of wavelengths is extracted to use as the probe beam in the OKE-based time-gate configuration. The gate timings and spatial resolution of the time-gated images are also investigated. The low coherence of the probe ensures that the artifacts due to speckles from the laser are reduced to a minimum. To illustrate this a comparison of the time-resolved images of the fuel sprays obtained with this configuration has been made with the images obtained with the collinear, dual color configuration of the optical gate with coherent illumination.

  1. The Proton-Driven Rotor of ATP Synthase: Ohmic Conductance (10 fS), and Absence of Voltage Gating

    E-Print Network [OSTI]

    Junge, Wolfgang

    The Proton-Driven Rotor of ATP Synthase: Ohmic Conductance (10 fS), and Absence of Voltage Gating portion of F0F1-ATP synthase, F0, translocates protons by a rotary mechanism. Proton conduction by F0. The current-voltage relationship of F0 was linear from 7 to 70 mV. The current was extremely proton

  2. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 6, JUNE 1998 1361 Degradation of Thin Tunnel Gate Oxide

    E-Print Network [OSTI]

    Schroder, Dieter K.

    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 6, JUNE 1998 1361 Degradation of Thin Tunnel. Schroder, Fellow, IEEE Abstract-- The degradation of thin tunnel gate oxide under constant Fowler charge trapping is usually dominant at low QQQinjinjinj followed by negative charge trapping at high

  3. Test Set Reordering Using the Gate Exhaustive Test Metric Kyoung Youn Cho and Edward J. McCluskey

    E-Print Network [OSTI]

    Stanford University

    Test Set Reordering Using the Gate Exhaustive Test Metric Kyoung Youn Cho and Edward J. Mc kycho@crc.stanford.edu Abstract When a test set size is larger than desired, some patterns must be dropped. This paper presents a systematic method to reduce test set size; the method reorders a test set

  4. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more »by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  5. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    SciTech Connect (OSTI)

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

  6. Molecular Physics, Vol. 104, No. 8, 20 April 2006, 12491266 Quantum logic gates in iodine vapor using timefrequency

    E-Print Network [OSTI]

    Apkarian, V. Ara

    ) We present a numerical investigation of the implementation of quantum logic gates through time. Possible experimental constraints are investigated, including the necessary precision in the timing the implementation of a sequence of quantum operations. The results of our simulations suggest that TFRCARS

  7. Digital pulse shape analysis for the capture-gated liquid scintillator BC-523A Marek Flaska , Sara A. Pozzi

    E-Print Network [OSTI]

    Eustice, Ryan

    A. Pozzi Department of Nuclear Engineering & Radiological Sciences, University of Michigan, 1906: Capture-gated detector Liquid scintillator Neutron spectroscopy Special nuclear material a b s t r a c and reasonable agreement is achieved. This work has applications in fields such as nuclear safeguards, nuclear

  8. IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 183 Externally Assembled Gate-All-Around Carbon

    E-Print Network [OSTI]

    IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 183 Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor Zhihong Chen, Member, IEEE, Damon Farmer, Sheng Xu, Roy Gordon, Phaedon Avouris, Member, IEEE, and Joerg Appenzeller, Senior Member, IEEE Abstract--In this letter, we

  9. Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

    SciTech Connect (OSTI)

    Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

    2014-10-21

    Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al?O? gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?°C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?°C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?°C.

  10. Coupled electromechanical effects in wurtzite quantum dots with wetting layers in gate controlled electric fields: The multiband case

    E-Print Network [OSTI]

    Melnik, Roderick

    Coupled electromechanical effects in wurtzite quantum dots with wetting layers in gate controlled quantifies the electromechanical effects on the band structure of wurtzite quantum dots. c Systematic study online 25 September 2012 a b s t r a c t We quantify the influence of coupled electromechanical effects

  11. Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability

    E-Print Network [OSTI]

    Misra, Durgamadhab "Durga"

    Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability N 2007; published online 17 January 2008 This work investigates the role of hydrogen and nitrogen in a Ge. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from

  12. Controlling Graphene Ultrafast Hot Carrier Response from Metal-like to Semiconductor-like by Electrostatic Gating

    E-Print Network [OSTI]

    Zettl, Alex

    1 Controlling Graphene Ultrafast Hot Carrier Response from Metal-like to Semiconductor electro-optic sampling.2 The focused THz beam at our graphene sample has a diameter of 1 mm. For optical between optical pump and THz probe. We use ion-gel gating to control the carrier concentration in graphene

  13. Efficient Modulation of 1.55 m Radiation with Gated Graphene on a Silicon Micro-ring Resonator

    E-Print Network [OSTI]

    Natelson, Douglas

    with complementary metal-oxide-semiconductor technology. #12;(TOC) Keywords: graphene photonics, NIR modulatorEfficient Modulation of 1.55 µm Radiation with Gated Graphene on a Silicon Micro-ring Resonator-edge onset of interband absorption in graphene can be utilized to modulate near-infrared radiation

  14. High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic

    E-Print Network [OSTI]

    Wang, Zhong L.

    fabricated using Al2O3 as a gate dielectric material grown by atomic layer deposition (ALD). Hole mobility is also desirable to allow for fabri- cation on plastic substrates. Atomic layer deposition (ALD layer deposition (ALD) Xiao-Hong Zhang a , Benoit Domercq a , Xudong Wang b , Seunghyup Yoo a , Takeshi

  15. International Conference on Internet Computing. Las Vegas, Nevada, p. 620 626. 23 26 June MONSTERS AT THE GATE

    E-Print Network [OSTI]

    Jansen, James

    , (2) Web agents are searching for a wide variety of information, with 60% of the terms used being: terms exactly as entered by the given user. Data Analysis With these three fields, we located initial June 2003. MONSTERS AT THE GATE: WHEN SOFTBOTS VISIT WEB SEARCH ENGINES Bernard J. Jansen and Amanda S

  16. Graduate Automotive Technology Education (GATE) Program: Center of Automotive Technology Excellence in Advanced Hybrid Vehicle Technology at West Virginia University

    SciTech Connect (OSTI)

    Nigle N. Clark

    2006-12-31

    This report summarizes the technical and educational achievements of the Graduate Automotive Technology Education (GATE) Center at West Virginia University (WVU), which was created to emphasize Advanced Hybrid Vehicle Technology. The Center has supported the graduate studies of 17 students in the Department of Mechanical and Aerospace Engineering and the Lane Department of Computer Science and Electrical Engineering. These students have addressed topics such as hybrid modeling, construction of a hybrid sport utility vehicle (in conjunction with the FutureTruck program), a MEMS-based sensor, on-board data acquisition for hybrid design optimization, linear engine design and engine emissions. Courses have been developed in Hybrid Vehicle Design, Mobile Source Powerplants, Advanced Vehicle Propulsion, Power Electronics for Automotive Applications and Sensors for Automotive Applications, and have been responsible for 396 hours of graduate student coursework. The GATE program also enhanced the WVU participation in the U.S. Department of Energy Student Design Competitions, in particular FutureTruck and Challenge X. The GATE support for hybrid vehicle technology enhanced understanding of hybrid vehicle design and testing at WVU and encouraged the development of a research agenda in heavy-duty hybrid vehicles. As a result, WVU has now completed three programs in hybrid transit bus emissions characterization, and WVU faculty are leading the Transportation Research Board effort to define life cycle costs for hybrid transit buses. Research and enrollment records show that approximately 100 graduate students have benefited substantially from the hybrid vehicle GATE program at WVU.

  17. An Exact Gate Decomposition Algorithm for LowPower Technology Mapping Hai Zhou and D.F. Wong

    E-Print Network [OSTI]

    Zhou, Hai

    properties, we design an efficient exact algorithm to solve the low­power gate decomposition problem. More designs. Power dissipation in digital CMOS circuits is dominated by the dynamic dissipation, which, but CL and E sw can be controlled in design process. In technology mapping, the subject netlist

  18. Ultrafast gated intensifier design for laser fusion x-ray framing applications

    SciTech Connect (OSTI)

    Price, R.H.; Wiedwald, J.D.; Kalibjian, R.; Thomas, S.W.; Cook, W.M.

    1983-11-01

    A major challenge for laser fusion is the study of the symmetry and the hydrodynamic stability of imploding fuel capsules. Streaked x-radiography, in one space and one time dimension, does not provide sufficient information. Two (spatial) dimensional frames of 10 to 100 ps duration are required with good image quality, minimum geometrical distortion (approximately 1%), dynamic range greater than 1000 and greater than 200 x 200 pixels. A gated transmission line imager (TLI) can meet these requirements with frame times between 30 and 100 ps. An instrument of this type is now being developed. Progress on this instrument including theory of operation, ultrafast pulse generation and propagation, component integration, and high resolution phosphor screen development are presented.

  19. Optical gating and streaking of free-electrons with attosecond precision

    E-Print Network [OSTI]

    Kozak, Martin; Leedle, Kenneth J; Schoenenberger, Norbert; Ruehl, Alex; Hartl, Ingmar; Harris, James S; Byer, Robert L; Hommelhoff, Peter

    2015-01-01

    In this paper we present proof of principle experiments of an optical gating concept for free electrons. We demonstrate a temporal resolution of 1.2+-0.3 fs via energy and transverse momentum modulation as a function of time. The scheme is based on the synchronous interaction between electrons and the near-field mode of a dielectric nano-grating excited by a femtosecond laser pulse with an optical period duration of 6.5 fs. The sub-optical cycle resolution demonstrated here is promising for use in laser-driven streak cameras for attosecond temporal characterization of bunched particle beams as well as time-resolved experiments with free-electron beams. We expect that 10 as temporal resolution will be achieved in the near future using such a scheme.

  20. A New Gated X-Ray Detector for the Orion Laser Facility

    SciTech Connect (OSTI)

    Clark, David D.; Aragonez, Robert J.; Archuleta, Thomas N.; Fatherley, Valerie E.; Hsu, Albert H.; Jorgenson, H. J.; Mares, Danielle; Oertel, John A.; Oades, Kevin; Kemshall, Paul; Thomas, Philip; Young, Trevor; Pederson, Neal

    2012-08-08

    Gated X-Ray Detectors (GXD) are considered the work-horse target diagnostic of the laser based inertial confinement fusion (ICF) program. Recently, Los Alamos National Laboratory (LANL) has constructed three new GXDs for the Orion laser facility at the Atomic Weapons Establishment (AWE) in the United Kingdom. What sets these three new instruments apart from the what has previously been constructed for the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) is: improvements in detector head microwave transmission lines, solid state embedded hard drive and updated control software, and lighter air box design and other incremental mechanical improvements. In this paper we will present the latest GXD design enhancements and sample calibration data taken on the Trident laser facility at Los Alamos National Laboratory using the newly constructed instruments.

  1. Ionizing radiation induced leakage current on ultra-thin gate oxides

    SciTech Connect (OSTI)

    Scarpa, A.; Paccagnella, A.; Montera, F.; Ghibaudo, G.; Pananakakis, G.; Fuochi, P.G.

    1997-12-01

    MOS capacitors with a 4.4 nm thick gate oxide have been exposed to {gamma} radiation from a Co{sup 60} source. As a result, the authors have measured a stable leakage current at fields lower than those required for Fowler-Nordheim tunneling. This Radiation Induced Leakage Current (RILC) is similar to the usual Stress Induced Leakage Currents (SILC) observed after electrical stresses of MOS devices. They have verified that these two currents share the same dependence on the oxide field, and the RILC contribution can be normalized to an equivalent injected charge for Constant Current Stresses. They have also considered the dependence of the RILC from the cumulative radiation dose, and from the applied bias during irradiation, suggesting a correlation between RILC and the distribution of trapped holes and neutral levels in the oxide layer.

  2. Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers

    SciTech Connect (OSTI)

    Gong, Zhirui; Liu, G. B.; Yu, Hongyi; Xiao, Di; Cui, Xiaodong; Xu, Xiaodong; Yao, Wang

    2013-01-01

    In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here we show that transition metal dichalcogenide bilayers offer an unprecedented platform to realize a strong coupling between the spin, valley and layer pseudospin of holes. Such coupling gives rise to the spin Hall effect and spin-dependent selection rule for optical transitions in inversion symmetric bilayer and leads to a variety of magnetoelectric effects permitting quantum manipulation of these electronic degrees of freedom. Oscillating electric and magnetic fields can both drive the hole spin resonance where the two fields have valley-dependent interference, making an interplay between the spin and valley as information carriers possible for potential valley-spintronic applications. We show how to realize quantum gates on the spin qubit controlled by the valley bit.

  3. Cooperative Gating and Spatial Organization of Membrane Proteins through Elastic Interactions

    E-Print Network [OSTI]

    Tristan Ursell; Kerwyn Huang; Eric Peterson; Rob Phillips

    2007-02-14

    Biological membranes are elastic media in which the presence of a transmembrane protein leads to local bilayer deformation. The energetics of deformation allow two membrane proteins in close proximity to influence each other's equilibrium conformation via their local deformations, and spatially organize the proteins based on their geometry. We use the mechanosensitive channel of large conductance (MscL) as a case study to examine the implications of bilayer-mediated elastic interactions on protein conformational statistics and clustering. The deformations around MscL cost energy on the order of 10 kT and extend ~3nm from the protein edge, as such elastic forces induce cooperative gating and we propose experiments to measure these effects. Additionally, since elastic interactions are coupled to protein conformation, we find that conformational changes can severely alter the average separation between two proteins. This has important implications for how conformational changes organize membrane proteins into functional groups within membranes.

  4. Revealing Carrier-Envelope Phase through Frequency Mixing and Interference in Frequency Resolved Optical Gating

    E-Print Network [OSTI]

    Snedden, Edward W; Jamison, Steven P

    2015-01-01

    We demonstrate that full temporal characterisation of few-cycle electromagnetic pulses, including retrieval of the carrier envelope phase (CEP), can be directly obtained from Frequency Resolved Optical Gating (FROG) techniques in which the interference between non-linear frequency mixing processes is resolved. We derive a framework for this scheme, defined Real Domain-FROG (ReD-FROG), as applied to the cases of interference between sum and difference frequency components and between fundamental and sum/difference frequency components. A successful numerical demonstration of ReD-FROG as applied to the case of a self-referenced measurement is provided. A proof-of-principle experiment is performed in which the CEP of a single-cycle THz pulse is accurately obtained and demonstrates the possibility for THz detection beyond the bandwidth limitations of electro-optic sampling.

  5. A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

    E-Print Network [OSTI]

    Hiroshi M. Yamamoto; Masaki Nakano; Masayuki Suda; Yoshihiro Iwasa; Masashi Kawasaki; Reizo Kato

    2013-09-02

    In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.

  6. Single photoelectron spin detection and angular momentum transfer in a gate defined quantum dot

    E-Print Network [OSTI]

    Takafumi Fujita; Kazuhiro Morimoto; Haruki Kiyama; Giles Allison; Marcus Larsson; Arne Ludwig; Sascha R. Valentin; Andreas D. Wieck; Akira Oiwa; Seigo Tarucha

    2015-04-14

    Recent innovations in fabricating nanoscale confined spin systems have enabled investigation of fundamental quantum correlations between single quanta of photons and matter states. Realization of quantum state transfer from photon polarization to electron spin using gate defined quantum dots (QDs) may give evidence of preserved coherence of angular momentum basis states at the photon-spin interface. The interface would enlarge the concept of quantum information technology, in which single photogenerated electron spins are manipulated with the dots, but this remains a serious challenge. Here, we report the detection of single electron spins generated by polarized single photons via a double QD (DQD) to verify the angular momentum transfer from single photons to single electrons. Pauli spin blockade (PSB) is used to project the photoelectron spin state onto the up or down spin state. Our result promises the realization of coherent quantum state transfer and development of hybrid photon and spin quantum technology.

  7. Short range, ultra-wideband radar with high resolution swept range gate

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-05-26

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. 14 figs.

  8. Short range, ultra-wideband radar with high resolution swept range gate

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1998-05-26

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control.

  9. Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics

    E-Print Network [OSTI]

    Sofia Fahlvik Svensson; Adam M. Burke; Damon J. Carrad; Martin Leijnse; Heiner Linke; Adam P. Micolich

    2014-11-11

    We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a conventional doped substrate gate and the local disorder potential at temperatures below 200 Kelvin, which we characterize in detail by combining conductance and thermovoltage measurements with modeling. Our results demonstrate that local polymer electrolyte gates are compatible with nanowire thermoelectrics, where they offer the advantage of a very low thermal conductivity, and hold great potential towards setting the optimal operating point for solid-state cooling applications.

  10. Project W-320, 241-C-106 sluicing: Civil/structural calculations. Volume 1

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-28

    This supporting document has been prepared to make the FDNW civil/structural calculations for Project W-320 readily retrievable.

  11. Project W-320, 241-C-106 sluicing: Piping calculations. Volume 4

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-24

    This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable. The objective of this calculation is to perform the structural analysis of the Pipe Supports designed for Slurry and Supernate transfer pipe lines in order to meet the requirements of applicable ASME codes. The pipe support design loads are obtained from the piping stress calculations W320-27-I-4 and W320-27-I-5. These loads are the total summation of the gravity, pressure, thermal and seismic loads. Since standard typical designs are used for each type of pipe support such as Y-Stop, Guide and Anchors, each type of support is evaluated for the maximum loads to which this type of supports are subjected. These loads are obtained from the AutoPipe analysis and used to check the structural adequacy of these supports.

  12. Project W-320, 241-C-106 sluicing: Civil/structural calculations. Volume 6

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-24

    This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable. The purpose of this calculation is to conservatively estimate the weight of equipment and structures being added over Tank 241-C-106 as a result of Project W-320 and combine these weights with the estimated weights of existing structures and equipment as calculated in Attachment 1. The combined weights will be compared to the allowable live load limit to provide a preliminary assessment of loading conditions above Tank 241-C-106.

  13. Project W-320, 241-C-106 sluicing: Piping calculations. Volume 3

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-25

    This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable.

  14. Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Broader source: Energy.gov [DOE]

    Presentation given by University of Alabama at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center of...

  15. Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by University of Alabama at Birmingham at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE...

  16. Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Broader source: Energy.gov [DOE]

    Presentation given by University of Alabama Birmingham at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  17. Quantum Mechanical Calculations of Charge Effects on gating the KcsA channel

    SciTech Connect (OSTI)

    Kariev, Alisher M.; Znamenskiy, Vasiliy S.; Green, Michael E.

    2007-02-06

    The research described in this product was performed in part in the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory. A series of ab initio (density functional) calculations were carried out on side chains of a set of amino acids, plus water, from the (intracellular) gating region of the KcsA K+ channel. Their atomic coordinates, except hydrogen, are known from X-ray structures [D.A. Doyle, J.M. Cabral, R.A. Pfuetzner, A. Kuo, J.M. Gulbis, S.L. Cohen, B.T. Chait, R. MacKinnon, The structure of the potassium channel: molecular basis of K+ conduction and selectivity, Science 280 (1998) 69–77; R. MacKinnon, S.L. Cohen, A. Kuo, A. Lee, B.T. Chait, Structural conservation in prokaryotic and eukaryotic potassium channels, Science 280 (1998) 106–109; Y. Jiang, A. Lee, J. Chen, M. Cadene, B.T. Chait, R. MacKinnon, The open pore conformation of potassium channels. Nature 417 (2001) 523–526], as are the coordinates of some water oxygen atoms. The 1k4c structure is used for the starting coordinates. Quantum mechanical optimization, in spite of the starting configuration, places the atoms in positions much closer to the 1j95, more tightly closed, configuration. This state shows four water molecules forming a “basket” under the Q119 side chains, blocking the channel. When a hydrated K+ approaches this “basket”, the optimized system shows a strong set of hydrogen bonds with the K+ at defined positions, preventing further approach of the K+ to the basket. This optimized structure with hydrated K+ added shows an ice-like 12 molecule nanocrystal of water. If the water molecules exchange, unless they do it as a group, the channel will remain blocked. The “basket” itself appears to be very stable, although it is possible that the K+ with its hydrating water molecules may be more mobile, capable of withdrawing from the gate. It is also not surprising that water essentially freezes, or forms a kind of glue, in a nanometer space; this agrees with experimental results on a rather different, but similarly sized (nm dimensions) system [K.B. Jinesh, J.W.M. Frenken, Capillary condensation in atomic scale friction: how water acts like a glue, Phys. Rev. Lett. 96 (2006) 166103/1–4].

  18. Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition

    SciTech Connect (OSTI)

    Ma, Alex M.; Gupta, Manisha; Shoute, Gem; Tsui, Ying Y.; Barlage, Douglas W., E-mail: barlage@ualberta.ca [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada); Afshar, Amir; Cadien, Kenneth C. [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)] [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)

    2013-12-16

    We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and a top gate contact. The ZnO active channel and thin high-? HfO{sub 2} dielectric utilized are both grown by atomic layer deposition at temperatures less than 130?°C, and their material and electronic properties are characterized. These SGTFTs demonstrate enhancement-mode operation with a threshold voltage of 0.91?V, electron mobility of 3.9 cm{sup 2} V{sup ?1} s{sup ?1}, and low subthreshold swing of 192?mV/decade. The devices also exhibit a unique combination of high breakdown voltages (>20?V) with low output conductances.

  19. Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics

    SciTech Connect (OSTI)

    Ha, Tae-Jun [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of)

    2014-07-28

    This study presents a promising approach to realize low-voltage (<3?V) organic thin-film transistors (OTFTs) exhibiting improved electrical and optical stability. Such device performance results from the use of solution-processed hybrid bilayer gate dielectrics consisting of zirconium dioxide (high-k dielectric) and amorphous fluoropolymer, CYTOP{sup ®} (low-k dielectric). Employing a very thin amorphous fluoropolymer film reduces interfacial defect-states by repelling water molecules and other aqueous chemicals from an organic semiconductor active layer due to the hydrophobic surface-property. The chemically clean interface, stemming from decrease in density of trap states improves all the key device properties such as field-effect mobility, threshold voltage, and sub-threshold swing. Furthermore, degradation by electrical bias-stress and photo-induced hysteresis were suppressed in OTFTs employing hybrid bilayer gate dielectrics.

  20. All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

    SciTech Connect (OSTI)

    Renteria, J.; Jiang, C.; Yan, Z.; Samnakay, R.; Goli, P.; Pope, T. R.; Salguero, T. T.; Wickramaratne, D.; Lake, R. K.; Khitun, A. G.; Balandin, A. A.

    2014-01-21

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  1. Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection

    SciTech Connect (OSTI)

    Ahn, Jae-Hyuk; Yun, Jeonghoon; Park, Inkyu; KI for the NanoCentury, KAIST, Daejeon 305-701; Mobile Sensor and IT Convergence Center, KAIST, Daejeon 305-701 ; Choi, Yang-Kyu

    2014-01-06

    A silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H{sub 2}) detection. The SiNW FETs are fabricated by top-down method and functionalized with palladium nanoparticles (PdNPs) through electron beam evaporation for H{sub 2} detection. The drain current of the PdNP-decorated device reversibly responds to H{sub 2} at different concentrations. The local side-gates allow individual addressing of each sensor and enhance the sensitivity by adjusting the working region to the subthreshold regime. A control experiment using a non-functionalized device verifies that the hydrogen-sensitivity is originated from the PdNPs functionalized on the SiNW surface.

  2. Evaluation of the irising effect of a slow-gating intensified charge-coupled device on laser-induced incandescence measurements of soot

    SciTech Connect (OSTI)

    Shaddix, Christopher R.; Williams, Timothy C. [Combustion Research Facility, Sandia National Laboratories, 7011 East Avenue, Livermore, California 94550 (United States)

    2009-03-15

    Intensified charge-coupled devices (ICCDs) are used extensively in many scientific and engineering environments to image weak or temporally short optical events. To optimize the quantum efficiency of light collection, many of these devices are chosen to have characteristic intensifier gate times that are relatively slow, on the order of tens of nanoseconds. For many measurements associated with nanosecond laser sources, such as scattering-based diagnostics and most laser-induced fluorescence applications, the signals rise and decay sufficiently fast during and after the laser pulse that the intensifier gate may be set to close after the cessation of the signal and still effectively reject interferences associated with longer time scales. However, the relatively long time scale and complex temporal response of laser-induced incandescence (LII) of nanometer-sized particles (such as soot) offer a difficult challenge to the use of slow-gating ICCDs for quantitative measurements. In this paper, ultraviolet Rayleigh scattering imaging is used to quantify the irising effect of a slow-gating scientific ICCD camera, and an analysis is conducted of LII image data collected with this camera as a function of intensifier gate width. The results demonstrate that relatively prompt LII detection, generally desirable to minimize the influences of particle size and local gas pressure and temperature on measurements of the soot volume fraction, is strongly influenced by the irising effect of slow-gating ICCDs.

  3. A large Bradbury Nielsen ion gate with flexible wire spacing based on photo-etched stainless steel grids and its characterization applying symmetric and asymmetric potentials

    E-Print Network [OSTI]

    T. Brunner; A. R. Mueller; K. O'Sullivan; M. C. Simon; M. Kossick; S. Ettenauer; A. T. Gallant; E. Mané; D. Bishop; M. Good; G. Gratta; J. Dilling

    2011-09-14

    Bradbury Nielsen gates are well known devices used to switch ion beams and are typically applied in mass or mobility spectrometers for separating beam constituents by their different flight or drift times. A Bradbury Nielsen gate consists of two interleaved sets of electrodes. If two voltages of the same amplitude but opposite polarity are applied the gate is closed, and for identical (zero) potential the gate is open. Whereas former realizations of the device employ actual wires resulting in difficulties with winding, fixing and tensioning them, our approach is to use two grids photo-etched from a metallic foil. This design allows for simplified construction of gates covering large beam sizes up to at least 900\\,mm$^2$ with variable wire spacing down to 250\\,\\textmu m. By changing the grids the wire spacing can be varied easily. A gate of this design was installed and systematically tested at TRIUMF's ion trap facility, TITAN, for use with radioactive beams to separate ions with different mass-to-charge ratios by their time-of-flight.

  4. A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

    SciTech Connect (OSTI)

    Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

    2014-01-01

    Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

  5. Evaluation of soft-core processors on a Xilinx Virtex-5 field programmable gate array.

    SciTech Connect (OSTI)

    Learn, Mark Walter

    2011-04-01

    Node-based architecture (NBA) designs for future satellite projects hold the promise of decreasing system development time and costs, size, weight, and power and positioning the laboratory to address other emerging mission opportunities quickly. Reconfigurable field programmable gate array (FPGA)-based modules will comprise the core of several of the NBA nodes. Microprocessing capabilities will be necessary with varying degrees of mission-specific performance requirements on these nodes. To enable the flexibility of these reconfigurable nodes, it is advantageous to incorporate the microprocessor into the FPGA itself, either as a hard-core processor built into the FPGA or as a soft-core processor built out of FPGA elements. This document describes the evaluation of three reconfigurable FPGA-based soft-core processors for use in future NBA systems: the MicroBlaze (uB), the open-source Leon3, and the licensed Leon3. Two standard performance benchmark applications were developed for each processor. The first, Dhrystone, is a fixed-point operation metric. The second, Whetstone, is a floating-point operation metric. Several trials were run at varying code locations, loop counts, processor speeds, and cache configurations. FPGA resource utilization was recorded for each configuration.

  6. Proposal for a graphene-based all-spin logic gate

    SciTech Connect (OSTI)

    Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud; Zhang, Youguang

    2015-02-16

    In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (??m), higher data throughput, faster computing speed (?ns), and lower power consumption (??A) can be expected from the G-ASLG.

  7. From quantum pulse gate to quantum pulse shaper -- enigneered frequency conversion in nonlinear optical waveguides

    E-Print Network [OSTI]

    Benjamin Brecht; Andreas Eckstein; Andreas Christ; Hubertus Suche; Christine Silberhorn

    2011-07-28

    Full control over the spatio-temporal structure of quantum states of light is an important goal in quantum optics, to generate for instance single-mode quantum pulses or to encode information on multiple modes, enhancing channel capacities. Quantum light pulses feature an inherent, rich spectral broadband-mode structure. In recent years, exploring the use of integrated optics as well as source-engineering has led to a deep understanding of the pulse-mode structure of guided quantum states of light. In addition, several groups have started to investigate the manipulation of quantum states by means of single-photon frequency conversion. In this paper we explore new routes towards complete control of the inherent pulse-modes of ultrafast pulsed quantum states by employing specifically designed nonlinear waveguides with adapted dispersion properties. Starting from our recently proposed quantum pulse gate (QPG) we further generalize the concept of spatio-spectral engineering for arbitrary $\\chitwo$-based quantum processes. We analyse the sum-frequency generation based QPG and introduce the difference-frequency generation based quantum pulse shaper (QPS). Together, these versatile and robust integrated optics devices allow for arbitrary manipulations of the pulse-mode structure of ultrafast pulsed quantum states. The QPG can be utilized to select an arbitrary pulse mode from a multimode input state, whereas the QPS enables the generation of specific pulse modes from an input wavepacket with Gaussian-shaped spectrum.

  8. Droplet minimizers for the Gates-Lebowitz-Penrose free energy functional

    E-Print Network [OSTI]

    E. A. Carlen; M. C. Carvalho; R. Esposito; J. L. Lebowitz; R. Marra

    2009-05-21

    We study the structure of the constrained minimizers of the Gates-Lebowitz-Penrose free-energy functional ${\\mathcal F}_{\\rm GLP}(m)$, non-local functional of a density field $m(x)$, $x\\in {\\mathcal T}_L$, a $d$-dimensional torus of side length $L$. At low temperatures, ${\\mathcal F}_{\\rm GLP}$ is not convex, and has two distinct global minimizers, corresponding to two equilibrium states. Here we constrain the average density $L^{-d}\\int_{{\\cal T}_L}m(x)\\dd x$ to be a fixed value $n$ between the densities in the two equilibrium states, but close to the low density equilibrium value. In this case, a "droplet" of the high density phase may or may not form in a background of the low density phase, depending on the values $n$ and $L$. We determine the critical density for droplet formation, and the nature of the droplet, as a function of $n$ and $L$. The relation between the free energy and the large deviations functional for a particle model with long-range Kac potentials, proven in some cases, and expected to be true in general, then provides information on the structure of typical microscopic configurations of the Gibbs measure when the range of the Kac potential is large enough.

  9. A novel solution to the gated x-ray detector gain droop problem

    SciTech Connect (OSTI)

    Oertel, J. A. Archuleta, T. N.

    2014-11-15

    Microchannel plate (MCP), microstrip transmission line based, gated x-ray detectors used at the premier ICF laser facilities have a drop in gain as a function of mircostrip length that can be greater than 50% over 40 mm. These losses are due to ohmic losses in a microstrip coating that is less than the optimum electrical skin depth. The electrical skin depth for a copper transmission line at 3 GHz is 1.2 ?m while the standard microstrip coating thickness is roughly half a single skin depth. Simply increasing the copper coating thickness would begin filling the MCP pores and limit the number of secondary electrons created in the MCP. The current coating thickness represents a compromise between gain and ohmic loss. We suggest a novel solution to the loss problem by overcoating the copper transmission line with five electrical skin depths (?6 ?m) of Beryllium. Beryllium is reasonably transparent to x-rays above 800 eV and would improve the carrier current on the transmission line. The net result should be an optically flat photocathode response with almost no measurable loss in voltage along the transmission line.

  10. Method and infrastructure for cycle-reproducible simulation on large scale digital circuits on a coordinated set of field-programmable gate arrays (FPGAs)

    DOE Patents [OSTI]

    Asaad, Sameh W; Bellofatto, Ralph E; Brezzo, Bernard; Haymes, Charles L; Kapur, Mohit; Parker, Benjamin D; Roewer, Thomas; Tierno, Jose A

    2014-01-28

    A plurality of target field programmable gate arrays are interconnected in accordance with a connection topology and map portions of a target system. A control module is coupled to the plurality of target field programmable gate arrays. A balanced clock distribution network is configured to distribute a reference clock signal, and a balanced reset distribution network is coupled to the control module and configured to distribute a reset signal to the plurality of target field programmable gate arrays. The control module and the balanced reset distribution network are cooperatively configured to initiate and control a simulation of the target system with the plurality of target field programmable gate arrays. A plurality of local clock control state machines reside in the target field programmable gate arrays. The local clock state machines are configured to generate a set of synchronized free-running and stoppable clocks to maintain cycle-accurate and cycle-reproducible execution of the simulation of the target system. A method is also provided.

  11. The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean

    E-Print Network [OSTI]

    Richart B. Cathcart; Alexander A. Bolonkin

    2007-02-04

    Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

  12. The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean

    E-Print Network [OSTI]

    Cathcart, R B; Bolonkin, Alexander A.; Cathcart, Richart B.

    2007-01-01

    Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

  13. Bell's Inequality and Universal Quantum Gates in a Cold-Atom Chiral Fermionic p-Wave Superfluid

    SciTech Connect (OSTI)

    Zhang Chuanwei; Tewari, Sumanta; Das Sarma, S.

    2007-11-30

    We propose and analyze a probabilistic scheme to entangle two spatially separated topological qubits in a p{sub x}+ip{sub y} superfluid using controlled collisions between atoms in movable dipole traps and unpaired atoms inside vortex cores in the superfluid. We discuss how to test the violation of Bell's inequality with the generated entanglement. A set of universal quantum gates is shown to be implementable deterministically using the entanglement despite the fact that the entangled states can be created only probabilistically.

  14. Ballistic Imaging of High-Pressure Fuel Sprays using Incoherent, Ultra- short Pulsed Illumination with an Ultrafast OKE-based Time Gating

    E-Print Network [OSTI]

    Purwar, Harsh; Rozé, Claude; Blaisot, Jean-Bernard

    2015-01-01

    We present an optical Kerr effect based time-gate with the collinear incidence of the pump and probe beams at the Kerr medium, liquid carbon disulfide, for ballistic imaging of the high-pressure fuel sprays. The probe pulse used to illuminate the object under study is extracted from the supercontinuum generated by tightly focusing intense femtosecond laser pulses inside water, thereby destroying their coherence. The optical imaging spatial resolution and gate timings are investigated and compared with a similar setup without supercontinuum generation, where the probe is still coherent. And finally, a few ballistic images of the fuel sprays using coherent and incoherent illumination with the proposed time-gate are presented and compared qualitatively.

  15. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

    SciTech Connect (OSTI)

    Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.; Passmore, Mr. Brandon [APEI, Inc.; Mcnutt, Tyler [APEI, Inc.; Lostetter, Dr. Alex [APEI, Inc.; Ericson, Milton Nance [ORNL; Frank, Steven [ORNL; Britton Jr, Charles L [ORNL; Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Lamichhane, Ranjan [APEI, Inc.; Shepherd, Paul [APEI, Inc.; Glover, Michael [APEI, Inc.

    2014-01-01

    This paper presents a high-temperature capable intelligent power module that contains SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter (Fig. 1) to determine the performance of the module in a system level application. The converter was operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The peak efficiency was found to be 97.5% at 2.9 kW.

  16. SU-E-T-66: Characterization of Radiation Dose Associated with Dark Currents During Beam Hold for Respiratory-Gated Electron Therapy

    SciTech Connect (OSTI)

    Hessler, J; Gupta, N; Rong, Y; Weldon, M

    2014-06-01

    Purpose: The main objective of this study was to estimate the radiation dose contributed by dark currents associated with the respiratory-gated electron therapy during beam hold. The secondary aim was to determine clinical benefits of using respiratory-gated electron therapy for left-sided breast cancer patients with positive internal mammary nodes (IMN). Methods: Measurements of the dark current-induced dose in all electron modes were performed on multiple Siemens and Varian linear accelerators by manually simulating beam-hold during respiratory gating. Dose was quantified at the machine isocenter by comparing the collected charge to the known output for all energies ranging from 6 to 18 MeV for a 10cm × 10cm field at 100 SSD with appropriate solid-water buildup. Using the Eclipse treatment planning system, we compared the additional dose associated with dark current using gated electron fields to the dose uncertainties associated with matching gated photon fields and ungated electron fields. Dose uncertainties were seen as hot and cold spots along the match line of the fields. Results: The magnitude of the dose associated with dark current is highly correlated to the energy of the beam and the amount of time the beam is on hold. For lower energies (6–12 MeV), there was minimal dark current dose (0.1–1.3 cGy/min). Higher energies (15–18 MeV) showed measurable amount of doses. The dark current associated with the electron beam-hold varied between linear accelerator vendors and depended on dark current suppression and the age of the linear accelerator. Conclusion: For energies up to 12 MeV, the dose associated with the dark current for respiratorygated electron therapy was shown to be negligible, and therefore should be considered an option for treating IMN positive left-sided breast cancer patients. However, at higher energies the benefit of respiratory gating may be outweighed by dose due to the dark current.

  17. Enzymatic AND-Gate Based on Electrode-Immobilized Glucose-6-Phosphate Dehydrogenase: Towards Digital Biosensors and Biochemical Logic Systems with Low Noise

    E-Print Network [OSTI]

    Vladimir Privman; Valber Pedrosa; Dmitriy Melnikov; Marcos Pita; Aleksandr Simonian; Evgeny Katz

    2009-06-22

    Electrode-immobilized glucose-6-phosphate dehydrogenase is used to catalyze an enzymatic reaction which carries out the AND logic gate. This logic function is considered here in the context of biocatalytic processes utilized for the biocomputing applications for "digital" (threshold) sensing/actuation. We outline the response functions desirable for such applications and report the first experimental realization of a sigmoid-shape response in one of the inputs. A kinetic model is developed and utilized to evaluate the extent to which the experimentally realized gate is close to optimal.

  18. Gate Length Reduction Technology for Pseudomorphic In0:52Al0:48As/In0:7Ga0:3As High Electron Mobility Transistors

    E-Print Network [OSTI]

    Seo, Kwang Seok

    Gate Length Reduction Technology for Pseudomorphic In0:52Al0:48As/In0:7Ga0:3As High Electron, 2006; accepted November 29, 2006; published online April 24, 2007) Gate length reduction technology was developed for pseudomorphic high-electron-mobility transistors (P-HEMTs) applicable to nano

  19. Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.

    SciTech Connect (OSTI)

    Wendt, Joel Robert; Ten Eyck, Gregory A.; Childs, Kenton David; Celler, G. (SOITEC); Eng, Kevin; Eriksson, Mark A. (University of Wisconsin); Kluskiewicz, Dan (University of New Mexico); Stevens, Jeffrey; Carroll, Malcolm S.; Nordberg, Eric; Lilly, Michael Patrick; Lemp, Thomas; Sheng, Josephine Juin-Jye

    2008-10-01

    There is significant interest in forming quantum bits (qubits) out of single electron devices for quantum information processing (QIP). Information can be encoded using properties like charge or spin. Spin is appealing because it is less strongly coupled to the solid-state environment so it is believed that the quantum state can better be preserved over longer times (i.e., that is longer decoherence times may be achieved). Long spin decoherence times would allow more complex qubit operations to be completed with higher accuracy. Recently spin qubits were demonstrated by several groups using electrostatically gated modulation doped GaAs double quantum dots (DQD) [1], which represented a significant breakthrough in the solid-state field. Although no Si spin qubit has been demonstrated to date, work on Si and SiGe based spin qubits is motivated by the observation that spin decoherence times can be significantly longer than in GaAs. Spin decoherence times in GaAs are in part limited by the random spectral diffusion of the non-zero nuclear spins of the Ga and As that couple to the electron spin through the hyperfine interaction. This effect can be greatly suppressed by using a semiconductor matrix with a near zero nuclear spin background. Near zero nuclear spin backgrounds can be engineered using Si by growing {sup 28}Si enriched epitaxy. In this talk, we will present fabrication details and electrical transport results of an accumulation mode double top gated Si metal insulator semiconductor (MIS) nanostructure, Fig 1 (a) & (b). We will describe how this single electron device structure represent a path towards forming a Si based spin qubit similar in design as that demonstrated in GaAs. Potential advantages of this novel qubit structure relative to previous approaches include the combination of: no doping (i.e., not modulation doped); variable two-dimensional electron gas (2DEG) density; CMOS compatible processes; and relatively small vertical length scales to achieve smaller dots. A primary concern in this structure is defects at the insulator-silicon interface. The Sandia National Laboratories 0.35 {micro}m fab line was used for critical processing steps including formation of the gate oxide to examine the utility of a standard CMOS quality oxide silicon interface for the purpose of fabricating Si qubits. Large area metal oxide silicon (MOS) structures showed a peak mobility of 15,000 cm{sup 2}/V-s at electron densities of {approx}1 x 10{sup 12} cm{sup -2} for an oxide thickness of 10 nm. Defect density measured using standard C-V techniques was found to be greater with decreasing oxide thickness suggesting a device design trade-off between oxide thickness and quantum dot size. The quantum dot structure is completed using electron beam lithography and poly-silicon etch to form the depletion gates, Fig 1 (a). The accumulation gate is added by introducing a second insulating Al{sub 2}O{sub 3} layer, deposited by atomic layer deposition, followed by an Al top gate deposition, Fig. 1 (b). Initial single electron transistor devices using SiO{sub 2} show significant disorder in structures with relatively large critical dimensions of the order of 200-300 nm, Fig 2. This is not uncommon for large silicon structures and has been cited in the literature [2]. Although smaller structures will likely minimize the effect of disorder and well controlled small Si SETs have been demonstrated [3], the design constraints presented by disorder combined with long term concerns about effects of defects on spin decoherence time (e.g., paramagnetic centers) motivates pursuit of a 2nd generation structure that uses a compound semiconductor approach, an epitaxial SiGe barrier as shown in Fig. 2 (c). SiGe may be used as an electron barrier when combined with tensilely strained Si. The introduction of strained-Si into the double top gated device structure, however, represents additional fabrication challenges. Thermal budget is potentially constrained due to concerns related to strain relaxation. Fabrication details related to the introduction of st

  20. TheGoldenGateBridgeWeatherJuly2010,Vol.65,No.7 fog, but the north tower had a story to tell. It

    E-Print Network [OSTI]

    Reading, University of

    176 TheGoldenGateBridgeWeather­July2010,Vol.65,No.7 fog, but the north tower had a story to tell. It worked as a chimney. The fog entered and escaped through the openings of the tower, displaying iridescent colors and creating ever-changing and fast-moving fog shad- ows of the tower and the cables (Figure 2). I

  1. Multi-Gate Modulation Doped In0.7Ga0.3As Quantum Well FET for Ultra Low Power Digital Logic

    E-Print Network [OSTI]

    Yener, Aylin

    Multi-Gate Modulation Doped In0.7Ga0.3As Quantum Well FET for Ultra Low Power Digital Logic L. LiuQFET is promising device architecture for future ultra low power information processing applications. Introduction for reconfigurable and ultra-low-power binary decision diagram (BDD) logic ECS Transactions, 35 (3) 311-317 (2011) 10

  2. Sinusoidal phase modulation as a gate for FROG N. K. Fontaine, R. P. Scott, J. P. Heritage, B. H. Kolner, and S. J. B. Yoo

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    the temporal evolution of the optical spectrum using the interaction of a gate acting on an optical waveform Line Amplifier +27 dBm +22 dBm +5 dBm Low-V Phase Modulator Power Splitters Amplifier 0-34 d

  3. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    SciTech Connect (OSTI)

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-11-14

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

  4. Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors

    E-Print Network [OSTI]

    Cao, Guozhong

    Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low a Corresponding author: skrha@hanbat.ac.kr Keywords: atomic layer deposition (ALD), silicon dioxide (SiO2), dichlorosilane (SiH2Cl2), ozone (O3) Abstract. SiO2 films were prepared by atomic layer deposition (ALD

  5. Implementations of quantum and classical gates with linear optical devices and photon number quantum non-demolition measurement for polarization encoded qubits

    E-Print Network [OSTI]

    Joao Batista Rosa Silva; Rubens Viana Ramos

    2006-07-26

    Aiming the construction of quantum computers and quantum communication systems based on optical devices, in this work we present possible implementations of quantum and classical CNOTs gates, as well an optical setup for generation and distribution of bipartite entangled states, using linear optical devices and photon number quantum non-demolition measurement.

  6. Impact of Chemical States on the Effective Work Function of Metal Gate and High-kappa Dielectric Materials on Novel Heterostructures 

    E-Print Network [OSTI]

    Coan, Mary

    2012-10-19

    and the interface between GaN and Al2O3, HfO2 and GaON. The investigation of the effect of a heterojunction on the effective work function in a metal/high-? gate stack found that when a Ge/Si heterostructure on silicon is lightly doped and sufficiently thin...

  7. High linearity GaN HEMT power amplifier with pre-linearization gate diode Shouxuan Xie, Vamsi Paidi, Sten Heikman, Alessandro Chini,

    E-Print Network [OSTI]

    Long, Stephen I.

    GaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added. Introduction. Our previously described single-ended Class B power amplifier design using GaN HEMT technology is biased at exactly the pinch off point (Class B configuration) [1]. In order to further improve

  8. Molecules as Segmented Storage Elements in Floating Gate Memories................................................................................................MAT.1 In-situ Deposition of High-k Dielectrics on a III-V Compound Semiconductor .............

    E-Print Network [OSTI]

    Reif, Rafael

    that are on the order of 1nm in size, representing a uniform set of identical nanostructured charge-storage centers. WeMaterials Molecules as Segmented Storage Elements in Floating Gate Memories ....................................................................................MAT.2 A CMOS-compatible Substrate and Contact Technology for Monolithic Integration of III-V Devices

  9. Analysis of Hippocampal Cell Proliferation, Survival, and Neuronal Morphology in P/Q-Type Voltage-Gated Calcium Channel Mutant Mice 

    E-Print Network [OSTI]

    Nigussie, Fikru

    2013-01-16

    Tottering and leaner mutant mice carry mutations in the pore-forming subunit (?1A) of P/Q-type (CaV 2.1) voltage-gated calcium ion (Ca2+) channels that result in reduced Ca2+ current density. Since Ca2+ influx via ...

  10. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  11. Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

    SciTech Connect (OSTI)

    Yuan, Hui E-mail: qli6@gmu.edu; Li, Haitao; Zhu, Hao; Zhang, Kai; Baumgart, Helmut; Bonevich, John E.; Richter, Curt A.; Li, Qiliang E-mail: qli6@gmu.edu

    2014-12-08

    Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33?eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metal–oxide–semiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

  12. Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

    SciTech Connect (OSTI)

    Tóvári, E.; Csontos, M., E-mail: csontos@dept.phy.bme.hu; Kriváchy, T.; Csonka, S. [Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, Budafoki út 8, H-1111 Budapest (Hungary); Fürjes, P. [MEMS Lab, Institute for Technical Physics and Materials Science, RCNS, HAS, Konkoly-Thege út 29-33, H-1121 Budapest (Hungary)

    2014-09-22

    The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

  13. DNA and RNA sequencing by nanoscale reading through programmable electrophoresis and nanoelectrode-gated tunneling and dielectric detection

    DOE Patents [OSTI]

    Lee, James W.; Thundat, Thomas G.

    2005-06-14

    An apparatus and method for performing nucleic acid (DNA and/or RNA) sequencing on a single molecule. The genetic sequence information is obtained by probing through a DNA or RNA molecule base by base at nanometer scale as though looking through a strip of movie film. This DNA sequencing nanotechnology has the theoretical capability of performing DNA sequencing at a maximal rate of about 1,000,000 bases per second. This enhanced performance is made possible by a series of innovations including: novel applications of a fine-tuned nanometer gap for passage of a single DNA or RNA molecule; thin layer microfluidics for sample loading and delivery; and programmable electric fields for precise control of DNA or RNA movement. Detection methods include nanoelectrode-gated tunneling current measurements, dielectric molecular characterization, and atomic force microscopy/electrostatic force microscopy (AFM/EFM) probing for nanoscale reading of the nucleic acid sequences.

  14. Time-gated single-photon detection module with 110 ps transition time and up to 80 MHz repetition rate

    SciTech Connect (OSTI)

    Buttafava, Mauro, E-mail: mauro.buttafava@polimi.it; Boso, Gianluca; Ruggeri, Alessandro; Tosi, Alberto [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Dalla Mora, Alberto [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy)

    2014-08-15

    We present the design and characterization of a complete single-photon counting module capable of time-gating a silicon single-photon avalanche diode with ON and OFF transition times down to 110 ps, at repetition rates up to 80 MHz. Thanks to this sharp temporal filtering of incoming photons, it is possible to reject undesired strong light pulses preceding (or following) the signal of interest, allowing to increase the dynamic range of optical acquisitions up to 7 decades. A complete experimental characterization of the module highlights its very flat temporal response, with a time resolution of the order of 30 ps. The instrument is fully user-configurable via a PC interface and can be easily integrated in any optical setup, thanks to its small and compact form factor.

  15. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  16. Effect of sidewall surface recombination on the quantum efficiency in a Y{sub 2}O{sub 3} passivated gated type-II InAs/GaSb long-infrared photodetector array

    SciTech Connect (OSTI)

    Chen, G.; Hoang, A. M.; Bogdanov, S.; Haddadi, A.; Darvish, S. R.; Razeghi, M., E-mail: razeghi@eecs.northwestern.edu [Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)

    2013-11-25

    Y{sub 2}O{sub 3} was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11??m, resulting in a saturated gate bias that was 3 times lower than in a SiO{sub 2} passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100?×?100??m size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77?K, the gated photodetector showed dark current density and resistance-area product at ?300?mV of 2.5?×?10{sup ?5} A/cm{sup 2} and 1.3?×?10{sup 4}???cm{sup 2}, respectively, and a specific detectivity of 1.4?×?10{sup 12} Jones.

  17. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

    SciTech Connect (OSTI)

    Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.; Passmore, Mr. Brandon [APEI, Inc.; Martin, Daniel [APEI, Inc.; Mcnutt, Tyler [APEI, Inc.; Lostetter, Dr. Alex [APEI, Inc.; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; Britton Jr, Charles L [ORNL; Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Dr. Matt [University of Arkansas; Lamichhane, Ranjan [University of Arkansas; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas

    2015-01-01

    This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter s switching frequency was then increased to 500 kHz to prove the high frequency capability of the power module was then pushed to its limits and operated at a switching frequency of 500 kHz. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

  18. Spin-polarization and spin-dependent logic gates in a double quantum ring based on Rashba spin-orbit effect: Non-equilibrium Green's function approach

    SciTech Connect (OSTI)

    Eslami, Leila, E-mail: Leslami@iust.ac.ir; Esmaeilzadeh, Mahdi, E-mail: mahdi@iust.ac.ir [Department of Physics, Iran University of Science and Technology, Tehran 16846 (Iran, Islamic Republic of)

    2014-02-28

    Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from ?1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted.

  19. High mobility field effect transistor based on BaSnO{sub 3} with Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Park, Chulkwon; Kim, Useong; Ju, Chan Jong; Park, Ji Sung; Kim, Young Mo; Char, Kookrin

    2014-11-17

    We fabricated an n-type accumulation-mode field effect transistor based on BaSnO{sub 3} transparent perovskite semiconductor, taking advantage of its high mobility and oxygen stability. We used the conventional metal-insulator-semiconductor structures: (In,Sn){sub 2}O{sub 3} as the source, drain, and gate electrodes, Al{sub 2}O{sub 3} as the gate insulator, and La-doped BaSnO{sub 3} as the semiconducting channel. The Al{sub 2}O{sub 3} gate oxide was deposited by atomic layer deposition technique. At room temperature, we achieved the field effect mobility value of 17.8?cm{sup 2}/Vs and the I{sub on}/I{sub off} ratio value higher than 10{sup 5} for V{sub DS}?=?1?V. These values are higher than those previously reported on other perovskite oxides, in spite of the large density of threading dislocations in the BaSnO{sub 3} on SrTiO{sub 3} substrates. However, a relatively large subthreshold swing value was found, which we attribute to the large density of charge traps in the Al{sub 2}O{sub 3} as well as the threading dislocations.

  20. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    SciTech Connect (OSTI)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji Shimura, Takayoshi; Watanabe, Heiji; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56?nm and very low interface state density of 2.4?×?10{sup 11?}cm{sup ?2}eV{sup ?1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  1. Feasibility of gate-turnoff thyristors in a high-voltage direct-current transmission system: Final report

    SciTech Connect (OSTI)

    McMurray, W.

    1987-08-01

    This study to identify potentially attractive applications for gate-turnoff thyristor (GTO) converters in utility systems includes both high-voltage direct-current (HVDC) valves and static volt-ampere reactive (VAR) controllers. The work includes a broad review of basic principles and the power circuit arrangements that are judged to be most attractive. The major differences between ordinary thyristors and GTO converters are discussed, including alternative HVDC transmission systems and static VAR controllers that are possible with GTOs. Whereas a current-source type of converter is the obvious choice with ordinary thyristors, the use of GTOs allows either current-source or voltage-source converters to be considered. A computer-aided analysis of the basic 6-pulse GTO current-source converter system is presented, including general equations for steady-state operation and plotting calculated waveforms. An analysis of a GTO voltage-source converter is given in less detail. Due to incomplete performance data, unresolved critical problems such as protection, and the disadvantages of higher cost, complexity and losses, it is difficult to recommend a specific GTO converter system at this time. The major advantage that GTO converters can offer is rapid and smoothly continuous control of reactive power. Further development of GTO converters should be aimed towards an application where reactive power control is very important and not readily achievable by conventional methods. 12 refs., 47 figs.

  2. Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1998-01-01

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings.

  3. Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-06-30

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. 20 figs.

  4. Development and Deployment of the Extended Reach Sluicing System (ERSS) for Retrieval of Hanford Single Shell Tank Waste. Draft

    SciTech Connect (OSTI)

    Bauer, Roger E.; Figley, Reed R.; Innes, A. G.

    2013-11-11

    A history of the evolution and the design development of Extended Reach Sluicer System (ERSS) is presented. Several challenges are described that had to be overcome to create a machine that went beyond the capabilities of prior generation sluicers to mobilize waste in Single Shell Tanks for pumping into Double Shell Tank receiver tanks. Off-the-shelf technology and traditional hydraulic fluid power systems were combined with the custom-engineered components to create the additional functionality of the ERSS, while still enabling it to fit within very tight entry envelope into the SST. Problems and challenges inevitably were encountered and overcome in ways that enhance the state of the art of fluid power applications in such constrained environments. Future enhancements to the ERSS design are explored for retrieval of tanks with different dimensions and internal obstacles.

  5. SU-E-T-361: Clinical Benefit of Automatic Beam Gating Mixed with Breath Hold in Radiation Therapy of Left Breast

    SciTech Connect (OSTI)

    Wu, J; Hill, G; Spiegel, J; Ye, J; Mehta, V

    2014-06-01

    Purpose: To investigate the clinical and dosimetric benefits of automatic gating of left breast mixed with breath-hold technique. Methods: Two Active Breathing Control systems, ABC2.0 and ABC3.0, were used during simulation and treatment delivery. The two systems are different such that ABC2.0 is a breath-hold system without beam control capability, while ABC3.0 has capability in both breath-hold and beam gating. At simulation, each patient was scanned twice: one with free breathing (FB) and one with breath hold through ABC. Treatment plan was generated on the CT with ABC. The same plan was also recalculated on the CT with FB. These two plans were compared to assess plan quality. For treatments with ABC2.0, beams with MU > 55 were manually split into multiple subfields. All subfields were identical and shared the total MU. For treatment with ABC3.0, beam splitting was unnecessary. Instead, treatment was delivered in gating mode mixed with breath-hold technique. Treatment delivery efficiency using the two systems was compared. Results: The prescribed dose was 50.4Gy at 1.8Gy/fraction. The maximum heart dose averaged over 10 patients was 46.0±2.5Gy and 24.5±12.2Gy for treatments with FB and with ABC respectively. The corresponding heart V10 was 13.2±3.6% and 1.0±1.6% respectively. The averaged MUs were 99.8±7.5 for LMT, 99.2±9.4 for LLT. For treatment with ABC2.0, normally the original beam was split into 2 subfields. The averaged total time to delivery all beams was 4.3±0.4min for treatments with ABC2.0 and 3.3±0.6min for treatments with ABC3.0 in gating mode. Conclusion: Treatment with ABC tremendously reduced heart dose. Compared to treatments with ABC2.0, gating with ABC3.0 reduced the total treatment time by 23%. Use of ABC3.0 improved the delivery efficiency, and eliminated the possibility of mistreatments. The latter may happen with ABC2.0 where beam is not terminated when breath signal falls outside of the treatment window.

  6. "The gate-keepers in a changing world: integrating microbial diversity and dynamics with global change biology."

    SciTech Connect (OSTI)

    Jessica L.M. Gutknecht and Kathryn M. Docherty

    2011-11-01

    Microorganisms (Bacteria, Archaea and Fungi) are the gate-keepers of many ecosystem-scale biogeochemical cycles. Although there have been measurable changes in ecosystem function due to human activities such as greenhouse gas production, nutrient loading, land-use change, and water consumption, few studies have connected microbial community dynamics with these changes in ecosystem function. Specifically, very little is known about how global changes will induce important functional changes in microbial biodiversity. Even less is known about how microbial functional changes could alter rates of nutrient cycling or whether microbial communities have enough functional redundancy that changes will have little impact on overall process rates. The proposed symposium will provide an overview of this emerging research area, with emphasis on linking the microorganisms directly to important ecological functions under the influence of global change dynamics. The session will include both broad overviews as well as specific case-studies by researchers who examine microbial communities from a variety of taxonomic levels and from various environments. The session will begin broadly, with speakers discussing how microbial communities may inform ecosystem-scale global change studies, and help to make microbial ecological knowledge more tangible for a broad range of ecologists. The session will continue with case studies of microbial community information informing process in global change experiments. Finally, the session will close with speakers discussing how microbial community information might fit into global change models, and what types of information are useful for future studies. We have requested that speakers particularly incorporate their views on what types of microbial data is useful and informative in the context of larger ecosystem processes. We foresee that this session could serve as a focal point for global change microbial ecologists to meet and discuss their field at the ESA 2010 General Meeting. However, more importantly, the session will provide for a broad range of interests for ecosystem ecologists, theoretical ecologists, and global change biologists, and will foster communication between these groups to generate informative microbial community data in the future.

  7. Stage Gate Management Guide

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2 nd Edition. 1993, New York:Addison-Wesley Publishing Co. 2 Eidt, C.M., jr. and R.W. Cohen, 'Reinventing' Industrial Basic Research. Research Technology Management, 1997: p....

  8. West Gate - 1 

    E-Print Network [OSTI]

    Unknown

    2005-06-30

    to Asian nations: a Philippine paper company installing a second-hand newsprint paper mill relocated from Quebec Canada; an Indian mill in West Bengal with plans to purchase a used de-inking line from a UK printer; an Indian company in Maharashtra... and Paper." October 1996. World Wide Web: http://www.oit.doe.gov. 15. Payne, Pulp Paper International. June I, 1994. 16. Reuters European Business Report. August 29, 1996. 17. Reuters Financial Service. November 3, 1992. 18. Salmon-Cox, Peter...

  9. West Gate - 2 

    E-Print Network [OSTI]

    Unknown

    2005-06-30

    FACTORS AF'FECTING ATTITUDINAL PATTERNS TOWARD EDUCATION IN THE DOHINICAN REPUBLIC A Thesi. s by EDWIN HUGH CARPENTER Submitted to the Graduate College of the Texas A&M University in partial fulfillment of the requirements for the degree... of Department) (Membe. ) (Member) Qiember) August 1968 111 ABSTRACT Factors Affecting Attitudinal Patterns toward Education in the Dominican Republic. (August 1968) Edwin H. Carpenter, B. A. , Texas A&M University; Directed by: Dr. Earl Jones...

  10. Al{sub 2}O{sub 3}/GeO{sub x} gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method

    SciTech Connect (OSTI)

    Yang, Xu; Zeng, Zhen-Hua [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Wang, Sheng-Kai, E-mail: wangshengkai@ime.ac.cn, E-mail: xzhang62@aliyun.com, E-mail: liuhonggang@ime.ac.cn; Sun, Bing; Zhao, Wei; Chang, Hu-Dong; Liu, Honggang, E-mail: wangshengkai@ime.ac.cn, E-mail: xzhang62@aliyun.com, E-mail: liuhonggang@ime.ac.cn [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xiong, E-mail: wangshengkai@ime.ac.cn, E-mail: xzhang62@aliyun.com, E-mail: liuhonggang@ime.ac.cn [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)

    2014-09-01

    Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stack fabricated by an in situ cycling ozone oxidation (COO) method in the atomic layer deposition (ALD) system at low temperature is systematically investigated. Excellent electrical characteristics such as minimum interface trap density as low as 1.9?×?10{sup 11?}cm{sup ?2?}eV{sup ?1} have been obtained by COO treatment. The impact of COO treatment against the band alignment of Al{sub 2}O{sub 3} with respect to Ge is studied by x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE). Based on both XPS and SE studies, the origin of gate leakage in the ALD-Al{sub 2}O{sub 3} is attributed to the sub-gap states, which may be correlated to the OH-related groups in Al{sub 2}O{sub 3} network. It is demonstrated that the COO method is effective in repairing the OH-related defects in high-k dielectrics as well as forming superior high-k/Ge interface for high performance Ge MOS devices.

  11. Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs high electron mobility transistor

    SciTech Connect (OSTI)

    Moro-Melgar, Diego; Mateos, Javier González, Tomás Vasallo, Beatriz G.

    2014-12-21

    By using a Monte Carlo simulator, the influence of the tunnel injection through the Schottky contact at the gate electrode of a GaInAs/AlInAs High Electron Mobility Transistor (HEMT) has been studied in terms of the static and noise performance. The method used to characterize the quantum tunnel current has been the Wentzel-Kramers-Brillouin (WKB) approach. The possibility of taking into account the influence of the image charge effect in the potential barrier height has been included as well. Regarding the static behavior, tunnel injection leads to a decrease in the drain current I{sub D} due to an enhancement of the potential barrier controlling the carrier transport through the channel. However, the pinch-off is degraded due to the tunneling current. Regarding the noise behavior, since the fluctuations in the potential barrier height caused by the tunnel-injected electrons are strongly coupled with the drain current fluctuations, a significant increase in the drain-current noise takes place, even when the tunnel effect is hardly noticeable in the static I-V characteristics, fact that must be taken into account when designing scaled HEMT for low-noise applications. In addition, tunnel injection leads to the appearance of full shot noise in the gate current.

  12. AVTA Federal Fleet PEV Readiness Data Logging and Characterization Study for the National Park Service: Golden Gate National Recreation Area

    SciTech Connect (OSTI)

    Stephen Schey; Jim Francfort

    2014-03-01

    Battelle Energy Alliance, LLC, managing and operating contractor for the U.S. Department of Energy's Idaho National Laboratory, is the lead laboratory for U.S. Department of Energy Advanced Vehicle Testing. Battelle Energy Alliance, LLC contracted with Intertek Testing Services, North America (ITSNA) to collect data on federal fleet operations as part of the Advanced Vehicle Testing Activity's Federal Fleet Vehicle Data Logging and Characterization study. The Advanced Vehicle Testing Activity study seeks to collect data to validate the utilization of advanced electric drive vehicle transportation. This report focuses on the Golden Gate National Recreation Area (GGNRA) fleet to identify daily operational characteristics of select vehicles and report findings on vehicle and mission characterizations to support the successful introduction of plug-in electric vehicles (PEVs) into the agencies' fleets. Individual observations of these selected vehicles provide the basis for recommendations related to electric vehicle adoption and whether a battery electric vehicle or plug-in hybrid electric vehicle (PHEV) (collectively PEVs) can fulfill the mission requirements. GGNRA identified 182 vehicles in its fleet, which are under the management of the U.S. General Services Administration. Fleet vehicle mission categories are defined in Section 4, and while the GGNRA vehicles conduct many different missions, only two (i.e., support and law enforcement missions) were selected by agency management to be part of this fleet evaluation. The selected vehicles included sedans, trucks, and sport-utility vehicles. This report will show that battery electric vehicles and/or PHEVs are capable of performing the required missions and providing an alternative vehicle for support vehicles and PHEVs provide the same for law enforcement, because each has a sufficient range for individual trips and time is available each day for charging to accommodate multiple trips per day. These charging events could occur at the vehicle home base, high-use work areas, or intermediately along routes that the vehicles frequently travel. Replacement of vehicles in the current fleet would result in significant reductions in the emission of greenhouse gases and petroleum use, while also reducing fuel costs. The San Francisco Bay Area is a leader in the adoption of PEVs in the United States. PEV charging stations, or more appropriately identified as electric vehicle supply equipment, located on the GGNRA facility would be a benefit for both GGNRA fleets and general public use. Fleet drivers and park visitors operating privately owned PEVs benefit by using the charging infrastructure. ITSNA recommends location analysis of the GGNRA site to identify the optimal placement of the electric vehicle supply equipment station. ITSNA recognizes the support of Idaho National Laboratory and ICF International for their efforts to initiate communication with the National Parks Service and GGNRA for participation in the study. ITSNA is pleased to provide this report and is encouraged by the high interest and support from the National Park Service and GGNRA personnel.

  13. 15/01/08 12:01The impact of gated Communities on property values: evidence of changes in real estate markets -Los ... -Cybergeo Page 1 of 23http://www.cybergeo.eu/index6225.html

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    (construction and maintenance costs of infrastructure within the gates). Such a structuring of residential space estate markets -Los ... - Cybergeo Page 1 of 23http://www.cybergeo.eu/index6225.html Cybergeo Systemic governments and land developers. Both agree to charge the homebuyer with the cost of urban sprawl

  14. Giant microwave photo-conductance of a tunnel point contact with a bridged gate A. D. Levin, G. M. Gusev, Z. D. Kvon, A. K. Bakarov, N. A. Savostianova, S. A. Mikhailov, E. E. Rodyakina, and

    E-Print Network [OSTI]

    Gusev, Guennady

    Giant microwave photo-conductance of a tunnel point contact with a bridged gate A. D. Levin, G. M://scitation.aip.org/termsconditions. Downloaded to IP: 143.107.128.11 On: Fri, 21 Aug 2015 14:09:19 #12;Giant microwave photo; published online 20 August 2015) We study the microwave photo-response of a quantum point contact (QPC

  15. Upgrading the Center for Lightweighting Automotive Materials and Processing - a GATE Center of Excellence at the University of Michigan-Dearborn

    SciTech Connect (OSTI)

    Mallick, P. K.

    2012-08-30

    The Center for Lightweighting Materials and Processing (CLAMP) was established in September 1998 with a grant from the Department of Energy’s Graduate Automotive Technology Education (GATE) program. The center received the second round of GATE grant in 2005 under the title “Upgrading the Center for Lightweighting Automotive Materials and Processing”. Using the two grants, the Center has successfully created 10 graduate level courses on lightweight automotive materials, integrated them into master’s and PhD programs in Automotive Systems Engineering, and offered them regularly to the graduate students in the program. In addition, the Center has created a web-based lightweight automotive materials database, conducted research on lightweight automotive materials and organized seminars/symposia on lightweight automotive materials for both academia and industry. The faculty involved with the Center has conducted research on a variety of topics related to design, testing, characterization and processing of lightweight materials for automotive applications and have received numerous research grants from automotive companies and government agencies to support their research. The materials considered included advanced steels, light alloys (aluminum, magnesium and titanium) and fiber reinforced polymer composites. In some of these research projects, CLAMP faculty have collaborated with industry partners and students have used the research facilities at industry locations. The specific objectives of the project during the current funding period (2005 – 2012) were as follows: (1) develop new graduate courses and incorporate them in the automotive systems engineering curriculum (2) improve and update two existing courses on automotive materials and processing (3) upgrade the laboratory facilities used by graduate students to conduct research (4) expand the Lightweight Automotive Materials Database to include additional materials, design case studies and make it more accessible to outside users (5) provide support to graduate students for conducting research on lightweight automotive materials and structures (6) provide industry/university interaction through a graduate certificate program on automotive materials and technology idea exchange through focused seminars and symposia on automotive materials.

  16. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    SciTech Connect (OSTI)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen [Device Department, United Microelectronics Corporation, Tainan Science Park, Tainan, Taiwan (China)

    2014-10-06

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO{sub 2} interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  17. Mitigation of cache memory using an embedded hard-core PPC440 processor in a Virtex-5 Field Programmable Gate Array.

    SciTech Connect (OSTI)

    Learn, Mark Walter

    2010-02-01

    Sandia National Laboratories is currently developing new processing and data communication architectures for use in future satellite payloads. These architectures will leverage the flexibility and performance of state-of-the-art static-random-access-memory-based Field Programmable Gate Arrays (FPGAs). One such FPGA is the radiation-hardened version of the Virtex-5 being developed by Xilinx. However, not all features of this FPGA are being radiation-hardened by design and could still be susceptible to on-orbit upsets. One such feature is the embedded hard-core PPC440 processor. Since this processor is implemented in the FPGA as a hard-core, traditional mitigation approaches such as Triple Modular Redundancy (TMR) are not available to improve the processor's on-orbit reliability. The goal of this work is to investigate techniques that can help mitigate the embedded hard-core PPC440 processor within the Virtex-5 FPGA other than TMR. Implementing various mitigation schemes reliably within the PPC440 offers a powerful reconfigurable computing resource to these node-based processing architectures. This document summarizes the work done on the cache mitigation scheme for the embedded hard-core PPC440 processor within the Virtex-5 FPGAs, and describes in detail the design of the cache mitigation scheme and the testing conducted at the radiation effects facility on the Texas A&M campus.

  18. Image processing with cellular nonlinear networks implemented on field-programmable gate arrays for real-time applications in nuclear fusion

    SciTech Connect (OSTI)

    Palazzo, S.; Vagliasindi, G.; Arena, P. [Dipartimento di Ingegneria Elettrica Elettronica e dei Sistemi, Universita degli Studi di Catania, 95125 Catania (Italy); Murari, A. [Consorzio RFX-Associazione EURATOM ENEA per la Fusione, I-35127 Padova (Italy); Mazon, D. [Association EURATOM-CEA, CEA Cadarache, 13108 Saint-Paul-lez-Durance (France); De Maack, A. [Arts et Metiers Paris Tech Engineering College (ENSAM), 13100 Aix-en-Provence (France); Collaboration: JET-EFDA Contributors

    2010-08-15

    In the past years cameras have become increasingly common tools in scientific applications. They are now quite systematically used in magnetic confinement fusion, to the point that infrared imaging is starting to be used systematically for real-time machine protection in major devices. However, in order to guarantee that the control system can always react rapidly in case of critical situations, the time required for the processing of the images must be as predictable as possible. The approach described in this paper combines the new computational paradigm of cellular nonlinear networks (CNNs) with field-programmable gate arrays and has been tested in an application for the detection of hot spots on the plasma facing components in JET. The developed system is able to perform real-time hot spot recognition, by processing the image stream captured by JET wide angle infrared camera, with the guarantee that computational time is constant and deterministic. The statistical results obtained from a quite extensive set of examples show that this solution approximates very well an ad hoc serial software algorithm, with no false or missed alarms and an almost perfect overlapping of alarm intervals. The computational time can be reduced to a millisecond time scale for 8 bit 496x560-sized images. Moreover, in our implementation, the computational time, besides being deterministic, is practically independent of the number of iterations performed by the CNN - unlike software CNN implementations.

  19. A versatile LabVIEW and field-programmable gate array-based scanning probe microscope for in operando electronic device characterization

    SciTech Connect (OSTI)

    Berger, Andrew J. Page, Michael R.; Young, Justin R.; Bhallamudi, Vidya P.; Johnston-Halperin, Ezekiel; Pelekhov, Denis V.; Hammel, P. Chris; Jacob, Jan; Lewis, Jim; Wenzel, Lothar

    2014-12-15

    Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In operando characterization of such devices by scanning probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanning probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field-programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform the various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically biased graphene field-effect transistor device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.

  20. Specific expression of the human voltage-gated proton channel Hv1 in highly metastatic breast cancer cells, promotes tumor progression and metastasis

    SciTech Connect (OSTI)

    Wang, Yifan [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China)] [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China); Li, Shu Jie, E-mail: shujieli@nankai.edu.cn [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China); Pan, Juncheng [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China)] [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China); Che, Yongzhe, E-mail: cheli@nankai.edu.cn [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Medicine, Nankai University, Tianjin 300071 (China)] [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Medicine, Nankai University, Tianjin 300071 (China); Yin, Jian [Cancer Institute and Hospital, Tianjin Medical University, Tianjin 300060 (China)] [Cancer Institute and Hospital, Tianjin Medical University, Tianjin 300060 (China); Zhao, Qing [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China)] [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China)

    2011-08-26

    Highlights: {yields} Hv1 is specifically expressed in highly metastatic human breast tumor tissues. {yields} Hv1 regulates breast cancer cytosolic pH. {yields} Hv1 acidifies extracellular milieu. {yields} Hv1 exacerbates the migratory ability of metastatic cells. -- Abstract: The newly discovered human voltage-gated proton channel Hv1 is essential for proton transfer, which contains a voltage sensor domain (VSD) without a pore domain. We report here for the first time that Hv1 is specifically expressed in the highly metastatic human breast tumor tissues, but not in poorly metastatic breast cancer tissues, detected by immunohistochemistry. Meanwhile, real-time RT-PCR and immunocytochemistry showed that the expression levels of Hv1 have significant differences among breast cancer cell lines, MCF-7, MDA-MB-231, MDA-MB-468, MDA-MB-453, T-47D and SK-BR-3, in which Hv1 is expressed at a high level in highly metastatic human breast cancer cell line MDA-MB-231, but at a very low level in poorly metastatic human breast cancer cell line MCF-7. Inhibition of Hv1 expression in the highly metastatic MDA-MB-231 cells by small interfering RNA (siRNA) significantly decreases the invasion and migration of the cells. The intracellular pH of MDA-MB-231 cells down-regulated Hv1 expression by siRNA is obviously decreased compared with MDA-MB-231 with the scrambled siRNA. The expression of matrix metalloproteinase-2 and gelatinase activity in MDA-MB-231 cells suppressed Hv1 by siRNA were reduced. Our results strongly suggest that Hv1 regulates breast cancer intracellular pH and exacerbates the migratory ability of metastatic cells.

  1. Anti-addiction drug ibogaine inhibits voltage-gated ionic currents: A study to assess the drug's cardiac ion channel profile

    SciTech Connect (OSTI)

    Koenig, Xaver; Kovar, Michael; Rubi, Lena; Mike, Agnes K.; Lukacs, Peter; Gawali, Vaibhavkumar S.; Todt, Hannes [Center for Physiology and Pharmacology, Department of Neurophysiology and -pharmacology, Medical University of Vienna, 1090 Vienna (Austria); Hilber, Karlheinz, E-mail: karlheinz.hilber@meduniwien.ac.at [Center for Physiology and Pharmacology, Department of Neurophysiology and -pharmacology, Medical University of Vienna, 1090 Vienna (Austria); Sandtner, Walter [Center for Physiology and Pharmacology, Institute of Pharmacology, Medical University of Vienna, 1090 Vienna (Austria)

    2013-12-01

    The plant alkaloid ibogaine has promising anti-addictive properties. Albeit not licenced as a therapeutic drug, and despite hints that ibogaine may perturb the heart rhythm, this alkaloid is used to treat drug addicts. We have recently reported that ibogaine inhibits human ERG (hERG) potassium channels at concentrations similar to the drugs affinity for several of its known brain targets. Thereby the drug may disturb the heart's electrophysiology. Here, to assess the drug's cardiac ion channel profile in more detail, we studied the effects of ibogaine and its congener 18-Methoxycoronaridine (18-MC) on various cardiac voltage-gated ion channels. We confirmed that heterologously expressed hERG currents are reduced by ibogaine in low micromolar concentrations. Moreover, at higher concentrations, the drug also reduced human Na{sub v}1.5 sodium and Ca{sub v}1.2 calcium currents. Ion currents were as well reduced by 18-MC, yet with diminished potency. Unexpectedly, although blocking hERG channels, ibogaine did not prolong the action potential (AP) in guinea pig cardiomyocytes at low micromolar concentrations. Higher concentrations (? 10 ?M) even shortened the AP. These findings can be explained by the drug's calcium channel inhibition, which counteracts the AP-prolonging effect generated by hERG blockade. Implementation of ibogaine's inhibitory effects on human ion channels in a computer model of a ventricular cardiomyocyte, on the other hand, suggested that ibogaine does prolong the AP in the human heart. We conclude that therapeutic concentrations of ibogaine have the propensity to prolong the QT interval of the electrocardiogram in humans. In some cases this may lead to cardiac arrhythmias. - Highlights: • We study effects of anti-addiction drug ibogaine on ionic currents in cardiomyocytes. • We assess the cardiac ion channel profile of ibogaine. • Ibogaine inhibits hERG potassium, sodium and calcium channels. • Ibogaine’s effects on ion channels are a potential source of cardiac arrhythmias. • 18-Methoxycoronaridine has a lower affinity for cardiac ion channels than ibogaine.

  2. All maximally entangling unitary gates

    E-Print Network [OSTI]

    Scott M. Cohen

    2011-08-19

    We characterize all maximally entangling bipartite unitary operators, acting on systems $A,B$ of arbitrary finite dimensions $d_A\\le d_B$, when use of ancillary systems by both parties is allowed. Several useful and interesting consequences of this characterization are discussed, including an understanding of why the entangling and disentangling capacities of a given (maximally entangling) unitary can differ and a proof that these capacities must be equal when $d_A=d_B$.

  3. Gated charged-particle trap

    DOE Patents [OSTI]

    Benner, W. Henry (Danville, CA)

    1999-01-01

    The design and operation of a new type of charged-particle trap provides simultaneous measurements of mass, charge, and velocity of large electrospray ions. The trap consists of a detector tube mounted between two sets of center-bored trapping plates. Voltages applied to the trapping plates define symmetrically-opposing potential valleys which guide axially-injected ions to cycle back and forth through the charge-detection tube. A low noise charge-sensitive amplifier, connected to the tube, reproduces the image charge of individual ions as they pass through the detector tube. Ion mass is calculated from measurement of ion charge and velocity following each passage through the detector.

  4. Novel Nanocrystal Floating Gate Memory

    E-Print Network [OSTI]

    Zhou, Huimei

    2012-01-01

    nanocrystals and tunnel oxide layer with a novel structure.of subsequent control oxide layer. Metal-oxide-semiconductorthe transistor has two oxide layers separated by Si. Top one

  5. Novel Nanocrystal Floating Gate Memory

    E-Print Network [OSTI]

    Zhou, Huimei

    2012-01-01

    were formed using atomic layer deposition of Al 2 O 3 beforewere deposited by atomic layer deposition (ALD) as shell of2 layer by ALD (Atomic Layer Deposition). An ultra-thin (~

  6. Binary Logic and Gates Introduction

    E-Print Network [OSTI]

    Bouhraoua, Abdelhafid

    . This binary system algebra is commonly referred to as Boolean Algebra after the mathematician George Boole, these functions are binary functions and require binary logic algebra for their derivation and manipulation Algebra Learn How to Map a Boolean Expressions into Logic Circuit Implementations Learn How To Manipulate

  7. from Microsoft's Bill Gates. Summer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26th Annual Conference onDickAlThe30/03foalResolving9 OnPower

  8. Structures of pseudechetoxin and pseudecin, two snake-venom cysteine-rich secretory proteins that target cyclic nucleotide-gated ion channels: implications for movement of the C-terminal cysteine-rich domain

    SciTech Connect (OSTI)

    Suzuki, Nobuhiro [Department of Applied Biochemistry, University of Tsukuba, Tsukuba, Ibaraki 305-8572 (Japan); Department of Biochemistry, National Institute of Agrobiological Sciences, Tsukuba, Ibaraki 305-8602 (Japan); Yamazaki, Yasuo [Department of Biochemistry, Meiji Pharmaceutical University, Kiyose, Tokyo 204-8588 (Japan); Brown, R. Lane [Neurological Science Institute, Oregon Health and Science University, Beaverton, Oregon 97006 (United States); Fujimoto, Zui [Department of Biochemistry, National Institute of Agrobiological Sciences, Tsukuba, Ibaraki 305-8602 (Japan); Morita, Takashi, E-mail: tmorita@my-pharm.ac.jp [Department of Biochemistry, Meiji Pharmaceutical University, Kiyose, Tokyo 204-8588 (Japan); Mizuno, Hiroshi, E-mail: tmorita@my-pharm.ac.jp [Department of Biochemistry, National Institute of Agrobiological Sciences, Tsukuba, Ibaraki 305-8602 (Japan); VALWAY Technology Center, NEC Soft Ltd, Koto-ku, Tokyo 136-8627 (Japan); Institute for Biological Resources and Functions, National Institute of Advanced Industrial Science and Technology, Central 6, Tsukuba, Ibaraki 305-8566 (Japan); Department of Applied Biochemistry, University of Tsukuba, Tsukuba, Ibaraki 305-8572 (Japan)

    2008-10-01

    The structures of pseudechetoxin and pseudecin suggest that both proteins bind to cyclic nucleotide-gated ion channels in a manner in which the concave surface occludes the pore entrance. Cyclic nucleotide-gated (CNG) ion channels play pivotal roles in sensory transduction by retinal photoreceptors and olfactory neurons. The elapid snake toxins pseudechetoxin (PsTx) and pseudecin (Pdc) are the only known protein blockers of CNG channels. These toxins belong to a cysteine-rich secretory protein (CRISP) family containing an N-terminal pathogenesis-related proteins of group 1 (PR-1) domain and a C-terminal cysteine-rich domain (CRD). PsTx and Pdc are highly homologous proteins, but their blocking affinities on CNG channels are different: PsTx blocks both the olfactory and retinal channels with ?15–30-fold higher affinity than Pdc. To gain further insights into their structure and function, the crystal structures of PsTx, Pdc and Zn{sup 2+}-bound Pdc were determined. The structures revealed that most of the amino-acid-residue differences between PsTx and Pdc are located around the concave surface formed between the PR-1 domain and the CRD, suggesting that the concave surface is functionally important for CNG-channel binding and inhibition. A structural comparison in the presence and absence of Zn{sup 2+} ion demonstrated that the concave surface can open and close owing to movement of the CRD upon Zn{sup 2+} binding. The data suggest that PsTx and Pdc occlude the pore entrance and that the dynamic motion of the concave surface facilitates interaction with the CNG channels.

  9. Engineer Nanocrystal Floating Gate Memory Scaling

    E-Print Network [OSTI]

    Ren, Jingjian

    2012-01-01

    Zhou, James A. Dorman, Ya-Chuan Perng, Stephanie Gachot,Zhou, James A. Dorman, Ya-Chuan Perng, Stephanie Gachot,

  10. Massage and the Gate Control Model

    E-Print Network [OSTI]

    Karlson, Cynthia Windham

    2010-08-31

    Purpose: Musculoskeletal pain is a significant problem in the United States, and medical interventions are not always effective in alleviating pain. Complementary therapies such as massage have been shown to have potent ...

  11. Countering Aging Effects through Field Gate Sizing 

    E-Print Network [OSTI]

    Henrichson, Trenton D.

    2010-01-14

    Transistor aging through negative bias temperature instability (NBTI) has become a major lifetime constraint in VLSI circuits. We propose a technique that uses antifuses to widen PMOS transistors later in a circuit?s life cycle to combat aging...

  12. Table of Contents Denise Gates 2

    E-Print Network [OSTI]

    Chapman, Michael S.

    students will be at Reynolds Middle School in Fairview, Ore., from 10 a.m. to 2 p.m., providing oral care of the American Association for Dental Research. Dr. Ferracane has been with the dental school since 1989. *Dr to children from local Boys and Girls Clubs, in a Medical Teams International dental van. Feb. 21: Sealant Day

  13. Quantum Gates for Superconducting A Dissertation

    E-Print Network [OSTI]

    Devoret, Michel H.

    , and the minimal number of non-linear circuit elements are particularly interesting, as they would reduce from Fourier analysis of the circuit Hamiltonian in a partic- ular multiply-rotating reference frame with the electromagnetic modes of an engineered quantum circuit. Doing so requires the subtle application of control

  14. GATE: Energy Efficient Vehicles for Sustainable Mobility

    Broader source: Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  15. WBG Gate Drivers for Power Modules

    Broader source: Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  16. ILP based Gate LeakageILP based Gate LeakageILP based Gate LeakageILP based Gate Leakage Optimization using DKCMOSOptimization using DKCMOS

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    Chronological (Year)Chronological (Year) N P 10-6 0 1990 1995 2000 2005 2010 2015 2020 ISQED 2008 Mohanty 7 in CMOSLeakages in CMOSgg I1 : reverse bias pn junction (both ON & OFF) I2 : subthreshold leakage (OFF )2 II33

  17. Engineer Nanocrystal Floating Gate Memory Scaling

    E-Print Network [OSTI]

    Ren, Jingjian

    2012-01-01

    layer is inserted into the oxide layer as the charge storagefor charge storage. As oxide layer gets thinner with scalingtunnel through the thin oxide layer and get trapped in the

  18. Electrochemical Cell Design With A Hollow Gate

    DOE Patents [OSTI]

    Romero, Antonio (Parkton, MD); Oweis, Salah (Ellicott City, MD); Chagnon, Guy (Columbia, MD); Staniewicz, Robert (Hunt Valley, MD); Briscoe, Douglas (Westminster, MD)

    2000-02-01

    An electrochemical cell having a spiral winding around a central core, wherein the central core is provided with longitudinal grooves on its outer surface to facilitate electrolyte filing and accommodate overpressure. The core itself improves dissipation of heat generated along the center of the cell, and the hollow core design allows the cell core to have a larger radius, permitting the "jelly roll" winding to begin at a larger radius and thereby facilitate the initial turns of the winding by decreasing the amount of bending required of the electrode laminate at the beginning of the winding operation. The hollow core also provides mechanical support end-to-end. A pair of washers are used at each end of the cell to sandwich current collection tabs in a manner that improves electrical and thermal conductivity while also providing structural integrity.

  19. A laser-programmable gate array 

    E-Print Network [OSTI]

    Gullette, James Benjamin

    1985-01-01

    process with double layer polysilicon, typicaHy used for capacitors, and single layer metal. The laser techniques used to program the devices were the interconnection of the over- lapping polysilicon layers and the cutting of metal and polysilicon links... Array The VLSI program at Texas A&M University was provided with a standard double-poly N-channel Metal Oxide Semiconductor (NMOS) process. It has been found that certain laser personalization techniques for creating and deleting con- nections...

  20. Trench Gate Power MOSFET: Recent Advances

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    the age of limited energy resources amidst an emerging energy crisis. Therefore, highly efficient, rugged that would have been impossible otherwise. In these applications, a huge amount of electrical energy the flow of energy from its source to the load in an efficient manner with high reliability is accomplished

  1. Dafna Shahaf Gates Center, Computer Science, CMU

    E-Print Network [OSTI]

    Guestrin, Carlos

    Fellowship 2009: Microsoft Research Graduate Women's Scholarship 2008: David J. Kuck Outstanding Thesis Award

  2. Engineer Nanocrystal Floating Gate Memory Scaling

    E-Print Network [OSTI]

    Ren, Jingjian

    2012-01-01

    deposited by atomic layer deposition (ALD). Fig. 3.1(a)XPS). By employing atomic layer deposition, 36nm Al 2 O 3was deposited by atomic layer deposition to cover the nano-

  3. David A Gates | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HAB Packet HanfordDOEDaniel Shechtman andDarkIDDatabasesMake ItTopTopA

  4. Graduate Automotive Technology Education (GATE) Initiative Awards |

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i nA Guide to Tapping STD-1128-2013 April 2013 DOEOwned

  5. EA-1070: Revised Finding of No Significant Impact

    Broader source: Energy.gov [DOE]

    Natural Fluctuation of Water Level in Par Pond and Reduced Water Flow in Steel Creek below L Lake at the Savannah River Site

  6. Measuring ultrashort pulses using frequency-resolved optical gating

    SciTech Connect (OSTI)

    Trebino, R. [Sandia National Laboratories, Livermore, CA (United States)

    1993-12-01

    The purpose of this program is the development of techniques for the measurement of ultrafast events important in gas-phase combustion chemistry. Specifically, goals of this program include the development of fundamental concepts and spectroscopic techniques that will augment the information currently available with ultrafast laser techniques. Of equal importance is the development of technology for ultrafast spectroscopy. For example, methods for the production and measurement of ultrashort pulses at wavelengths important for these studies is an important goal. Because the specific vibrational motion excited in a molecule depends sensitively on the intensity, I(t), and the phase, {psi}(t), of the ultrashort pulse used to excite the motion, it is critical to measure both of these quantities for an individual pulse. Unfortunately, this has remained an unsolved problem for many years. Fortunately, this year, the authors present a technique that achieves this goal.

  7. Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Fertilizer use can cause environmental problems, particularly eutrophication of water bodies from excess nitrogen or phosphorus. Increased fertilizer runoff is a concern...

  8. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    hybrids - electric and hybrid vehicle configurations - vehicle modeling (Autonomie) - fuel cells - hardwaresoftwarecomponent in loop - power electronics - combustion -...

  9. Gates Room 242, 353 Serra Mall Stanford, CA, USA 94305

    E-Print Network [OSTI]

    Li, Fei-Fei

    Francisco, CA, USA Ø Growth hacking in the Activation and Messaging team for Twitter user retension Apr integration, enterprise IT solutions and business information systems Aug 2011 - Aug 2013 Software Engineer

  10. thebulletin27 November 2011 -Issue 108 Gates Foundation funding

    E-Print Network [OSTI]

    Aickelin, Uwe

    matter that collectively make it very good for the microbial fuel cells. "When we first started using of urine runs over the stack and produces power as the microbes inside the MFCs get to work on the urine

  11. Compressed Sensing Quantum Process Tomography for Superconducting Quantum Gates

    E-Print Network [OSTI]

    Rodionov, Andrey

    2014-01-01

    2.2 Review of superconducting qubits . . . . . .State Tomography for superconducting qubits 3.1 The idea ofPossible new effects in superconductive tunnelling”, Physics

  12. Statistical Gate Sizing for Timing Yield Optimization Debjit Sinha

    E-Print Network [OSTI]

    Zhou, Hai

    collectively vary as the parameter space. Nominally sub-critical paths may become critical in some regions due all factors that contribute to delay variations as parameters and refer to the range in which they can as an active research topic. Agarwal et al. present a statistical timing analysis approach which focuses

  13. GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  14. August20,2008 MaryGatesHallCommons

    E-Print Network [OSTI]

    Reh, Thomas A.

    acquired macrolide resistance gene [erm(B), erm(F), mef(A)] though their expression of macrolide resistance macrolide resistance; two transferred only mef(A), one transferred erm(F) and mef(A), two transferred erm(B) and mef(A), and one transferred all three erm(B), erm(F) and mef(A). The frequency of transfer from H

  15. Isolated Photosystem I Reaction Centers on a Functionalized Gated...

    Office of Scientific and Technical Information (OSTI)

    DE-AC05-00OR22725 Resource Type: Journal Article Resource Relation: Journal Name: IEEE Transactions on NanoBioScience; Journal Volume: 10; Journal Issue: 3 Research Org: Oak...

  16. Virtual gating and nuclear transport: the hole picture

    E-Print Network [OSTI]

    is receptor-mediated (and is therefore selective), energy dependent and fast [7­9]. Transport involves export signals (NESs) on cargos destined for the cytoplasm. Most import and export signals are recognized a concentration gradient, an energy source and a directional cue are needed. Both are provided by the small GTPase

  17. Electrical characteristics of non-rectangular gate and transitional MOSFETS 

    E-Print Network [OSTI]

    Grignoux, Patrice

    1981-01-01

    of the depletion layer is of the order of a few microns [8], as compared to a few debye lengths (about D. OS microns [9]) for the inversion layer. Therefore, the reasonable assumption that the mobile charge is distributed on a sur- face is often made... my year of study at Texas AIM University. I am thankful to Dr. D. L. Johnson for the deep insight he gave me in various mathematical developments and to Dr. FL A. Stroud who made my numerous numerical integrations possible. I am also thankful...

  18. 4th International Symposium on Advanced Gate Stack Technology

    E-Print Network [OSTI]

    Kummel, Andrew C.

    of adsorption. a: Calculated adsorption energies, Hads, are given with respect to the clean Ge(100)-4×2 surface. Hydrogen passivation of both oxygen and metal atoms was used to eliminate the density of states of electronic defects at these interface are problematic. We have performed a survey of potential ordered oxide

  19. Such ion gels have shown superior performance as gate

    E-Print Network [OSTI]

    Zeebe, Richard E.

    materials currently available. However, a functional gas separation membrane must withstand a substantial molecular architecture also holds promise for gas separation. Ionic liquids strongly prefer to dissolve CO2 for the separation of CO2 from CH4 or N2 (9), with promising results. Applications to other technologies such as fuel

  20. Molecular logic gates Encoded Multichromophore Response for Simultaneous

    E-Print Network [OSTI]

    Dwyer, Chris

    Constantin Pistol, Vincent Mao, Viresh Thusu, Alvin R. Lebeck, and Chris Dwyer* The self] Prof. C. Dwyer, Dr. C. Pistol, V. Mao, V. Thusu Department of Electrical and Computer Engineering Duke

  1. GATE Center for Automotive Fuel Cell Systems at Virginia Tech

    Broader source: Energy.gov [DOE]

    Presentation from the U.S. DOE Office of Vehicle Technologies "Mega" Merit Review 2008 on February 25, 2008 in Bethesda, Maryland.

  2. Theoretical Analysis of Gate Level Information Flow Tracking

    E-Print Network [OSTI]

    Sherwood, Tim

    . This paper presents a theoretical analysis of GLIFT. It formalizes the problem, provides fundamental contributions of this paper are: 1) Defining and proving fundamental properties of GLIFT: We precisely define , Mohit Tiwari , Timothy Sherwood , and Ryan Kastner Computer Science and Engineering, University

  3. Computational Model of Graphenen-Based Logic Gates and Architectures

    E-Print Network [OSTI]

    Yue, Kun

    2013-01-01

    graphene is a semi-metal or zero-gap semiconductor [1].Graphene-Based Non-Boolean Logic Circuit". arXiv: The International Technology Roadmap for Semiconductors,graphene-based analog logic circuits able to complement of complementary metal-oxide semiconductor (

  4. Determination of prospective displacement-based gate threshold...

    Office of Scientific and Technical Information (OSTI)

    Author Affiliations Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, Texas 77030 (United States) Publication Date: 2007-11-15 OSTI...

  5. A p-cell approach to integer gate sizing 

    E-Print Network [OSTI]

    Doddannagari, Uday

    2009-05-15

    Standard-Cell-library-based design ow is widely followed in the Application Specific Integrated Circuit(ASIC) industry. Most of the realistic cell libraries are geometrically spaced introducing significant sparseness in the library. This is because...

  6. GATE Center of Excellence at UAB in Lightweight Materials for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1 Mohammed Shohel Civil and Environmental Engineering, PhD (Graduated, Dec 06) Resin infusion processing of laminated composites 2 Carol Ochoa Materials Science & Engineering, PhD...

  7. Implications of Modern Semiconductor Technologies on Gate Sizing

    E-Print Network [OSTI]

    Lee, John

    2012-01-01

    set ? g as: the minimum power cell option ? that satisfiesslews. Next, the minimum power cell option that satisfiesgates at the minimum power cell, and p d 10 , is the power

  8. GATE Center of Excellence in Lightweight Materials and Manufacturing Technologies

    Office of Energy Efficiency and Renewable Energy (EERE)

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  9. Choosing a gate dielectric for graphene based transistors

    E-Print Network [OSTI]

    Hsu, Pei-Lan, M. Eng. Massachusetts Institute of Technology

    2008-01-01

    Much attention has recently been focused on graphene as an alternative semiconductor to silicon. Transistors with graphene conduction channels have only recently been fabricated and their performance remains to be optimized. ...

  10. Molecular and quantum dot floating gate non-volatile memories

    E-Print Network [OSTI]

    Abdu, Hassen

    2008-01-01

    Conventional Flash memory devices face a scaling issue that will impede memory scaling beyond the 50nm node: a reliability issue involving the tunneling oxide thickness and charge retention. A possible solution is to replace ...

  11. Determination of prospective displacement-based gate threshold...

    Office of Scientific and Technical Information (OSTI)

    R.; Beddar, S. Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, Texas 77030 (United States) 62 RADIOLOGY AND NUCLEAR MEDICINE;...

  12. Controlling Wild Mobile Robots Using Virtual Gates and Discrete Transitions

    E-Print Network [OSTI]

    LaValle, Steven M.

    sheets, cheap motors, a color sensor, and an Arduino microntroller board (total cost less than $100 US

  13. Women @ Energy: Dianne Gates-Anderson | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    students to consider technical careers. 1) What inspired you to work in STEM? I loved chemistry from my very first chemistry course in the tenth grade. Of the sciences, I found...

  14. Partial Gating Optimization for Power Reduction During Test Application

    E-Print Network [OSTI]

    Tehranipoor, Mohammad

    and energy consumption self testing of portable devices is rendered impractical. For all these reasons. INTRODUCTION Power consumption during testing has become an impor- tant issue in modern day designs consumption is especially important in today's chips, where larger numbers of transistors are packed

  15. Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated...

    Broader source: Energy.gov (indexed) [DOE]

    or phosphorus. Increased fertilizer runoff is a concern for harvesting corn stover for ethanol production. 37500.pdf More Documents & Publications 2015 Peer Review...

  16. GATE Center of Excellence at UAB in Lightweight Materials for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    09 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. ti10vaidya...

  17. GATE Center of Excellence at UAB in Lightweight Materials for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    11 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation ti012vaidya2011o...

  18. GATE -a General Architecture for Text Engineering Hamish Cunningham

    E-Print Network [OSTI]

    ~dcs, shef. ac. uk http://www, des. shef. ac. uk/re search/groups/nip/nip, html Abstract Much progress has. integration overheads. In some respects these probleIns are insoluble without general changes in the way NLE by these problems by providing a soft- ware architecture for NLE systems. Our view is that succesful algorithmic

  19. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and S.-K Kim (Seoul National University, Korea). Research funding: the U.S. Department of Energy; the Humboldt Foundation (Germany); the Helmholtz Association (Germany); the...

  20. Ultrafast terahertz gating of the polarization and giant nonlinear...

    Office of Scientific and Technical Information (OSTI)

    Bibtex Format Close 0 pages in this document matching the terms "" Search For Terms: Enter terms in the toolbar above to search the full text of this document for pages...

  1. Quantum gates, sensors, and systems with trapped ions

    E-Print Network [OSTI]

    Wang, Shannon Xuanyue

    2012-01-01

    Quantum information science promises a host of new and useful applications in communication, simulation, and computational algorithms. Trapped atomic ions are one of the leading physical systems with potential to implement ...

  2. Direct Injection Compression Ignition Diesel Automotive Technology Education GATE Program

    SciTech Connect (OSTI)

    Anderson, Carl L

    2006-09-25

    The underlying goal of this prqject was to provide multi-disciplinary engineering training for graduate students in the area of internal combustion engines, specifically in direct injection compression ignition engines. The program was designed to educate highly qualified engineers and scientists that will seek to overcome teclmological barriers preventing the development and production of cost-effective high-efficiency vehicles for the U.S. market. Fu1iher, these highly qualified engineers and scientists will foster an educational process to train a future workforce of automotive engineering professionals who are knowledgeable about and have experience in developing and commercializing critical advanced automotive teclmologies. Eight objectives were defmed to accomplish this goal: 1. Develop an interdisciplinary internal co1nbustion engine curriculum emphasizing direct injected combustion ignited diesel engines. 2. Encourage and promote interdisciplinary interaction of the faculty. 3. Offer a Ph.D. degree in internal combustion engines based upon an interdisciplinary cuniculum. 4. Promote strong interaction with indusuy, develop a sense of responsibility with industry and pursue a self sustaining program. 5. Establish collaborative arrangements and network universities active in internal combustion engine study. 6. Further Enhance a First Class educational facility. 7. Establish 'off-campus' M.S. and Ph.D. engine programs of study at various indusuial sites. 8. Extend and Enhance the Graduate Experience.

  3. Bill Gates visit to Idaho validates innovation role for national

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D B L O OLaura|Bilayer Graphene Gets a Bandgap

  4. South Gate, California: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity forSiliciumEnergy IncAshburnham,BoundChicagoEl

  5. South Gate, Maryland: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity forSiliciumEnergy IncAshburnham,BoundChicagoElMaryland: Energy

  6. Ocean Gate, New Jersey: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPI VenturesNewSt. Louis,Energy Information AreaCounty LandfillLtd Jump

  7. Microsoft Word - S.J. Gates-1.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on77 PAGE OFDetection of Hydrates onRHUBCAeronetCustomerTHE

  8. Thermosensitive gating effect and selective gas adsorption in a porous

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory ofDidDevelopment TopMetathesisSediments andThe Story ofcoordination

  9. GATE Global Alternative Energy Holding AG | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:ofEnia SpAFlexStock Co Ltd JumpLatino

  10. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy Bills andOrder 422.1, CONDUCT P - . . - - 4 v - rPBS: WindPEMFC R&D at|

  11. Penn State DOE Graduate Automotive Technology Education (Gate) Program for

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy Bills andOrder 422.1, CONDUCT P -ParticleMANAGEMENTIn-Vehicle, High-Power

  12. Stage Gate Review Guide for the Industrial Technologies Program |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy BillsNo.Hydrogen4EnergySolidof2 SpecialSpent|Staffing for

  13. AgraGate Carbon Credits Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAand DaltonSolar EnergyAerodynall Countries |InformationAgenzia

  14. Development of Dual-Gated Bilayer Graphene Device Structures. (Conference)

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing BacteriaConnectlaser-solidSwitchgrass and Miscanthus x| SciTech Connect

  15. Isolated Photosystem I Reaction Centers on a Functionalized Gated High

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing(Journalspectroscopy of aerosols in(JournalTechnical Report: Is BayesianElectron

  16. Women @ Energy: Dianne Gates-Anderson | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyThe U.S.Lacledeutilities.Energy Thefull swing,AlicePhillipsDarleneDebraDianne

  17. Ultrafast terahertz gating of the polarization and giant nonlinear optical

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of rare Kaon and(Conference) |Article) |Fe(phen)free-electron

  18. Ultrafast terahertz gating of the polarization and giant nonlinear optical

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of rare Kaon and(Conference) |Article) |Fe(phen)free-electronresponse in

  19. GATE Center of Excellence in Lightweight Materials and Manufacturing

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,Executive Compensation References: FAR 31.205-6Applications | Department

  20. GATE Center of Excellence in Sustainable Vehicle Systems | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,Executive Compensation References: FAR 31.205-6Applications |

  1. High Temperature, High Voltage Fully Integrated Gate Driver Circuit |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing ProgramsDepartment of¡High HIGHofWasteDepartment of

  2. High Temperature, High Voltage Fully Integrated Gate Driver Circuit |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing ProgramsDepartment of¡High HIGHofWasteDepartment

  3. The University of Tennessee's GATE Center for Hybrid Systems | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCEDInstallers/ContractorsPhotovoltaicsState ofSavings for Specific Measures (April 2013) |Theof

  4. The University of Tennessee's GATE Center for Hybrid Systems | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCEDInstallers/ContractorsPhotovoltaicsState ofSavings for Specific Measures (April 2013) |Theofof

  5. Vehicle Technologies Office Merit Review 2015: Gate Driver Optimization for

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematics And Statistics » USAJobs Search USAJobsAdvanced Engine CombustionLocator |Data |Viable|LifeWBG

  6. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCenter (LMI-EFRC)Lodging LodgingLogisticsLong-Term

  7. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCenter (LMI-EFRC)Lodging LodgingLogisticsLong-TermLooking at

  8. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCenter (LMI-EFRC)Lodging LodgingLogisticsLong-TermLooking

  9. Self-terminating diffraction gates femtosecond X-ray nanocrystallography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation ofAlbuquerque| StanfordOfficeImplementationmeasurements Self-terminating

  10. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E CChinaC L SLooking at Transistor

  11. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E CChinaC L SLooking at TransistorLooking

  12. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E CChinaC L SLooking at

  13. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E CChinaC L SLooking atLooking at

  14. TabuTabu Search Based Gate LeakageSearch Based Gate Leakagegg Optimization using DKCMOSOptimization using DKCMOS

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    Normaliz Physica 10-4 50 No P Chronological (Year) Chronological (Year) N P 10-6 0 1990 1995 2000 2005) #12;Leakages in CMOSLeakages in CMOSgg I1 : reverse bias pn junction (both ON & OFF) I2 : subthreshold

  15. Electrostatic screening by semiconductors 

    E-Print Network [OSTI]

    Krcmar, Maja

    1998-01-01

    distributions. We determine the sluice screening length for the screening of a charged surface defect, and the interaction energy between two charged surface defects. We find the spatial scales over which dielectric and metallic properties of the semiconductors...

  16. CX-002205: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    686-G Steel Creek Dam (L-Lake) InspectionCX(s) Applied: B1.3Date: 04/16/2010Location(s): Aiken, South CarolinaOffice(s): Environmental Management, Savannah River Operations Office

  17. The need for high-gate dielectrics and metal gates in advanced integrated circuits has reopened the door to Ge and IIIV compounds as potential replacements for silicon

    E-Print Network [OSTI]

    Kummel, Andrew C.

    characterization techniques with first-principles simulations. Surface Defects and Passivation of Ge and III of Ge­Hf bonds at the interface, as recently predicted from first-principles simula- tions,24­26 as well to an epitaxial reactor, where it is baked in H2 at a typical temperature of 600­650°C to obtain a clean Ge

  18. Solution-gated graphene transistors for chemical and biological sensing applications

    E-Print Network [OSTI]

    Mailly, Benjamin

    2013-01-01

    Various fabrication processes were developed in order to make graphene-based chemical and biological sensors on different substrates. Single-layer graphene is grown by chemical vapor deposition and then transferred to ...

  19. Spatially resolved observation of domain-wall propagation in a submicron ferromagnetic NOT-gate

    E-Print Network [OSTI]

    Grütter, Peter

    , one head-to-head or tail-to-tail domain wall propagates in the structure. Magnetic fields above by the polarity of the adjacent wire magnetization directions as either head-to- head or tail-to-tail domain walls-wall propagation. MFM using low magnetic moment tips 30 nm CoPtCr was operated in the constant height mode

  20. The Brandenburg Gates : unity, division, and reinvented tradition in post-wall Berlin

    E-Print Network [OSTI]

    Ayyash, Dima

    2013-01-01

    Twenty three years after the German Reunification (German: Deutsche Wiedervereinigung), the once divided Berlin is still undergoing a process of recovery from the deep political, social, cultural, and physical divisions ...