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Sample records for l-lake sluice gate

  1. Sharav Sluices Ltd | Open Energy Information

    Open Energy Info (EERE)

    Sharav Sluices Ltd Jump to: navigation, search Name: Sharav Sluices Ltd Place: Haifa, Israel Zip: 32000 Sector: Renewable Energy Product: Developed a technology to produce...

  2. Waste retrieval sluicing system data acquisition system acceptance test report

    SciTech Connect (OSTI)

    Bevins, R.R.

    1998-07-31

    This document describes the test procedure for the Project W-320 Tank C-106 Sluicing Data Acquisition System (W-320 DAS). The Software Test portion will test items identified in the WRSS DAS System Description (SD), HNF-2115. Traceability to HNF-2115 will be via a reference that follows in parenthesis, after the test section title. The Field Test portion will test sensor operability, analog to digital conversion, and alarm setpoints for field instrumentation. The W-320 DAS supplies data to assist thermal modeling of tanks 241-C-106 and 241-AY-102. It is designed to be a central repository for information from sources that would otherwise have to be read, recorded, and integrated manually. Thus, completion of the DAS requires communication with several different data collection devices and output to a usable PC data formats. This test procedure will demonstrate that the DAS functions as required by the project requirements stated in Section 3 of the W-320 DAS System Description, HNF-2115.

  3. Project management plan for project W-320, tank 241-C-106 sluicing

    SciTech Connect (OSTI)

    Leliefeld, K.W.

    1996-02-02

    This Project Management Plan establishes the organization, plans, and systems for management of Project W-320 as defined in DOE Order 4700.1, Project Management System (DOE 1987). The sluicing is for retrieving high-heat waste from single shell tank 241-C-106.

  4. Gate Access

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gate Access Print When you first arrive at the ALS, gate clearance will have been arranged for you by the User Office. Berkeley Lab employees and visiting researchers...

  5. CX-010121: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    685-G Par Pond and 686-G L-Lake Sluice Gate Conduit Cleanouts/Inspections CX(s) Applied: B1.3 Date: 03/21/2013 Location(s): South Carolina Offices(s): Savannah River Operations Office

  6. CX-011819: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    685-G PAR Pond and 686-G L-Lake Sluice Gate Conduit Cleanouts/Inspections CX(s) Applied: B1.3 Date: 01/27/2014 Location(s): South Carolina Offices(s): Savannah River Operations Office

  7. Quality control summary report for the RFI/RI assessment of the submerged sediment core samples taken at Par Pond, Pond C, and L-Lake

    SciTech Connect (OSTI)

    Koch, J. II

    1996-12-01

    This report presents a summary of the sediment characterization performed under the direction of the Westinghouse Savannah River Company`s (WSRC) Environmental Protection Department/Environmental Monitoring Section (EPD/EMS) in support of Par Pond, Pond C, and L- Lake. This characterization will be a screening study and will enable the Environmental Sciences Section (ESS) to develop a defensible contaminants of concern list for more extensive characterization of the Par Pond, Pond C, and L-Lake.

  8. Project W-320, 241-C-106 sluicing: Construction specification W-320-C7

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  9. Project W-320, 241-C-106 sluicing: Construction specification W-320-C1

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  10. Project management plan for Project W-320, Tank 241-C-106 sluicing. Revision 2

    SciTech Connect (OSTI)

    Phillips, D.R.

    1994-07-01

    A major mission of the US Department of Energy (DOE) is the permanent disposal of Hanford Site defense wastes by utilizing safe, environmentally acceptable, and cost-effective disposal methods that meet applicable regulations. The Tank Waste Remediation System (TWRS) Program was established at the Hanford Site to manage and control activities specific to the remediation of safety watch list tanks, including high-heat-producing tanks, and for the ultimate characterization, retrieval, pretreatment, and disposal of the low- and high-level fractions of the tank waste. Project W-320, Tank 241-C-106 Sluicing, provides the methodology, equipment, utilities, and facilities necessary for retrieving the high-heat waste from single-shell tank (SST) 24-C-106. Project W-320 is a fiscal year (FY) 1993 expense-funded major project, and has a design life of 2 years. Retrieval of the waste in tank 241-C-106 will be accomplished through mobilization of the sludge into a pumpable slurry using past-practice sluicing. The waste is then transferred directly to a double-shell tank for interim storage, subsequent pretreatment, and eventual disposal. A detailed description of the management organization and responsibilities of all participants is presented in this document.

  11. Project W-320, 241-C-106 sluicing: Construction specification W-320-C5

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  12. Project W-320, 241-C-106 sluicing: Construction specification W-320-C2

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-20

    This supporting document has been prepared to make the construction specifications for Project W-320 readily available. Project W-320, Waste Retrieval Sluicing System (WRSS), specification is for procurement, fabrication and installation of equipment at the C Tank Farm, including Operator Station and some equipment just outside the C Tank Farm fence, necessary to support the sluicing operation. Work consists of furnishing labor, equipment, and materials to provide the means to procure materials and equipment, fabricate items, excavate and place concrete, and install equipment, piping, wiring, and structures in accordance with the Contract Documents. Major work elements include: Excavation for process and fire protection piping, electrical conduit trenches, and foundations for small structures; Placement of concrete cover blocks, foundations, and equipment pads; Procurement and installation of double walled piping, electrical conduit, fire and raw water piping, chilled water piping, and electrical cable; Procurement and installation of above-ground ventilation system piping between the (HVAC) Process building and Tank C-106; Core drill existing concrete; Furnish and installation of electrical distribution equipment; Installation of the concrete foundation, and assembly installation of the two Seismic Shutdown Systems with Environmental Enclosures; Fabrication and installation of in-pit pipe jumpers, including related valves, instruments and wiring; and Installation of a vertical submersible pump, horizontal booster pump, and winch assembly into tank access riser pits.

  13. Safety evaluation for packaging transportation of equipment for tank 241-C-106 waste sluicing system

    SciTech Connect (OSTI)

    Calmus, D.B.

    1994-08-25

    A Waste Sluicing System (WSS) is scheduled for installation in nd waste storage tank 241-C-106 (106-C). The WSS will transfer high rating sludge from single shell tank 106-C to double shell waste tank 241-AY-102 (102-AY). Prior to installation of the WSS, a heel pump and a transfer pump will be removed from tank 106-C and an agitator pump will be removed from tank 102-AY. Special flexible receivers will be used to contain the pumps during removal from the tanks. After equipment removal, the flexible receivers will be placed in separate containers (packagings). The packaging and contents (packages) will be transferred from the Tank Farms to the Central Waste Complex (CWC) for interim storage and then to T Plant for evaluation and processing for final disposition. Two sizes of packagings will be provided for transferring the equipment from the Tank Farms to the interim storage facility. The packagings will be designated as the WSSP-1 and WSSP-2 packagings throughout the remainder of this Safety Evaluation for Packaging (SEP). The WSSP-1 packagings will transport the heel and transfer pumps from 106-C and the WSSP-2 packaging will transport the agitator pump from 102-AY. The WSSP-1 and WSSP-2 packagings are similar except for the length.

  14. Imaging through obscurations for sluicing operations in the waste storage tanks

    SciTech Connect (OSTI)

    Peters, T.J.; McMakin, D.L.; Sheen, D.M.; Chieda, M.A.

    1994-08-01

    Waste remediators have identified that surveillance of waste remediation operations and periodic inspections of stored waste are required under very demanding and difficult viewing environments. In many cases, obscurants such as dust or water vapor are generated as part of the remediation activity. Methods are required for viewing or imaging beyond the normal visual spectrum. Work space images guide the movement of remediation equipment, creating a need for rapidly updated, near real-time imaging capability. In addition, there is a need for three-dimensional topographical data to determine the contours of the wastes, to plan retrieval campaigns, and to provide a three-dimensional map of a robot`s work space as basis for collision avoidance. Three basic imaging techniques were evaluated: optical, acoustic and radar. The optical imaging methods that were examined used cameras which operated in the visible region and near-infrared region and infrared cameras which operated in the 3--5 micron and 8--12 micron wavelength regions. Various passive and active lighting schemes were tested, as well as the use of filters to eliminate reflection in the visible region. Image enhancement software was used to extend the range where visual techniques could be used. In addition, the operation of a laser range finder, which operated at 0.835 microns, was tested when fog/water droplets were suspended in the air. The acoustic technique involved using commercial acoustic sensors, operating at approximately 50 kHz and 215 kHz, to determine the attenuation of the acoustic beam in a high-humidity environment. The radar imaging methods involved performing millimeter wave (94 GHz) attenuation measurement sin the various simulated sluicing environments and performing preliminary experimental imaging studies using a W-Band (75--110 GHz) linearly scanned transceiver in a laboratory environment. The results of the tests are discussed.

  15. Gated strip proportional detector

    DOE Patents [OSTI]

    Morris, Christopher L.; Idzorek, George C.; Atencio, Leroy G.

    1987-01-01

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  16. Gated strip proportional detector

    DOE Patents [OSTI]

    Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

    1985-02-19

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  17. Range gated imaging experiments using gated intensifiers

    SciTech Connect (OSTI)

    McDonald, T.E. Jr.; Yates, G.J.; Cverna, F.H.; Gallegos, R.A.; Jaramillo, S.A.; Numkena, D.M.; Payton, J.; Pena-Abeyta, C.R.

    1999-03-01

    A variety of range gated imaging experiments using high-speed gated/shuttered proximity focused microchannel plate image intensifiers (MCPII) are reported. Range gated imaging experiments were conducted in water for detection of submerged mines in controlled turbidity tank test and in sea water for the Naval Coastal Sea Command/US Marine Corps. Field experiments have been conducted consisting of kilometer range imaging of resolution targets and military vehicles in atmosphere at Eglin Air Force Base for the US Air Force, and similar imaging experiments, but in smoke environment, at Redstone Arsenal for the US Army Aviation and Missile Command (AMCOM). Wavelength of the illuminating laser was 532 nm with pulse width ranging from 6 to 12 ns and comparable gate widths. These tests have shown depth resolution in the tens of centimeters range from time phasing reflected LADAR images with MCPII shutter opening.

  18. Stage Gate Management Guide

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... particularly for hydrolysis and fermentation * Scale up information from lab or ... 24 Gate 4 Review Criteria Must have an industrial partner that will lead the Stage 4 ...

  19. Sliding-gate valve

    DOE Patents [OSTI]

    Usnick, George B.; Ward, Gene T.; Blair, Henry O.; Roberts, James W.; Warner, Terry N.

    1979-01-01

    This invention is a novel valve of the slidable-gate type. The valve is designed especially for long-term use with highly abrasive slurries. The sealing surfaces of the gate are shielded by the valve seats when the valve is fully open or closed, and the gate-to-seat clearance is swept with an inflowing purge gas while the gate is in transit. A preferred form of the valve includes an annular valve body containing an annular seat assembly defining a flow channel. The seat assembly comprises a first seat ring which is slidably and sealably mounted in the body, and a second seat ring which is tightly fitted in the body. These rings cooperatively define an annular gap which, together with passages in the valve body, forms a guideway extending normal to the channel. A plate-type gate is mounted for reciprocation in the guideway between positions where a portion of the plate closes the channel and where a circular aperture in the gate is in register with the channel. The valve casing includes opposed chambers which extend outwardly from the body along the axis of the guideway to accommodate the end portions of the gate. The chambers are sealed from atmosphere; when the gate is in transit, purge gas is admitted to the chambers and flows inwardly through the gate-to-seat-ring, clearance, minimizing buildup of process solids therein. A shaft reciprocated by an external actuator extends into one of the sealed chambers through a shaft seal and is coupled to an end of the gate. Means are provided for adjusting the clearance between the first seat ring and the gate while the valve is in service.

  20. Optical NAND gate

    DOE Patents [OSTI]

    Skogen, Erik J.; Raring, James; Tauke-Pedretti, Anna

    2011-08-09

    An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  1. Optical XOR gate

    DOE Patents [OSTI]

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  2. Optical NOR gate

    DOE Patents [OSTI]

    Skogen, Erik J.; Tauke-Pedretti, Anna

    2011-09-06

    An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  3. Advanced insulated gate bipolar transistor gate drive

    DOE Patents [OSTI]

    Short, James Evans; West, Shawn Michael; Fabean, Robert J.

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  4. Compact gate valve

    DOE Patents [OSTI]

    Bobo, Gerald E.

    1977-01-01

    This invention relates to a double-disc gate valve which is compact, comparatively simple to construct, and capable of maintaining high closing pressures on the valve discs with low frictional forces. The valve casing includes axially aligned ports. Mounted in the casing is a sealed chamber which is pivotable transversely of the axis of the ports. The chamber contains the levers for moving the valve discs axially, and an actuator for the levers. When an external drive means pivots the chamber to a position where the discs are between the ports and axially aligned therewith, the actuator for the levers is energized to move the discs into sealing engagement with the ports.

  5. ONE SHAKE GATE FORMER

    DOE Patents [OSTI]

    Kalibjian, R.; Perez-Mendez, V.

    1957-08-20

    An improved circuit for forming square pulses having substantially short and precise durations is described. The gate forming circuit incorporates a secondary emission R. F. pentode adapted to receive input trigger pulses amd having a positive feedback loop comnected from the dynode to the control grid to maintain conduction in response to trigger pulses. A short circuited pulse delay line is employed to precisely control the conducting time of the tube and a circuit for squelching spurious oscillations is provided in the feedback loop.

  6. Penn State DOE GATE Program

    SciTech Connect (OSTI)

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  7. Gate Solar | Open Energy Information

    Open Energy Info (EERE)

    Spain Sector: Solar Product: JV set up for the promotion, exploitation and sale of photovoltaic solar power plants. References: Gate Solar1 This article is a stub. You can help...

  8. Graduate Automotive Technology Education (GATE) Initiative Awards |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research

  9. Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy

    SciTech Connect (OSTI)

    Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki

    2011-04-15

    Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

  10. Double-disc gate valve

    DOE Patents [OSTI]

    Wheatley, Seth J.

    1979-01-01

    This invention relates to an improvement in a conventional double-disc gate valve having a vertically movable gate assembly including a wedge, spreaders slidably engaged therewtih, a valve disc carried by the spreaders. When the gate assembly is lowered to a selected point in the valve casing, the valve discs are moved transversely outward to close inlet and outlet ports in the casing. The valve includes hold-down means for guiding the disc-and-spreader assemblies as they are moved transversely outward and inward. If such valves are operated at relatively high differential pressures, they sometimes jam during opening. Such jamming has been a problem for many years in gate valves used in gaseous diffusion plants for the separtion of uranium isotopes. The invention is based on the finding that the above-mentioned jamming results when the outlet disc tilts about its horizontal axis in a certain way during opening of the valve. In accordance with the invention, tilting of the outlet disc is maintained at a tolerable value by providing the disc with a rigid downwardly extending member and by providing the casing with a stop for limiting inward arcuate movement of the member to a preselected value during opening of the valve.

  11. Gating of the proton-gated ion channel from Gloeobacter violaceus...

    Office of Scientific and Technical Information (OSTI)

    Title: Gating of the proton-gated ion channel from Gloeobacter violaceus at pH 4 as revealed by X-ray crystallography Authors: Gonzalez-Gutierrez, Giovanni ; Cuello, Luis G. ; ...

  12. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    SciTech Connect (OSTI)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgstrm, Magnus T.; Hessman, Dan; Samuelson, Lars

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  13. Retaining latch for a water pit gate

    DOE Patents [OSTI]

    Beale, A.R.

    1997-11-18

    A retaining latch is described for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame. 4 figs.

  14. Automatically closing swing gate closure assembly

    DOE Patents [OSTI]

    Chang, Shih-Chih; Schuck, William J.; Gilmore, Richard F.

    1988-01-01

    A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

  15. Retaining latch for a water pit gate

    DOE Patents [OSTI]

    Beale, Arden R. (Idaho Falls, ID)

    1997-01-01

    A retaining latch for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame.

  16. Stage Gate Review Guide for the Industrial Technologies Program...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Stage Gate Review Guide for the Industrial Technologies Program Stage-Gate Innovation Management Guidelines: Managing Risk Through Structured Project Decision-Making, February ...

  17. Repeat-until-success cubic phase gate for universal continuous...

    Office of Scientific and Technical Information (OSTI)

    phase gate for universal continuous-variable quantum computation Citation Details In-Document Search Title: Repeat-until-success cubic phase gate for universal ...

  18. Gate-tunable exchange coupling between cobalt clusters on graphene...

    Office of Scientific and Technical Information (OSTI)

    Gate-tunable exchange coupling between cobalt clusters on graphene Title: Gate-tunable exchange coupling between cobalt clusters on graphene Authors: Chen, Hua ; Niu, Qian ; Zhang, ...

  19. Unbalanced edge modes and topological phase transition in gated...

    Office of Scientific and Technical Information (OSTI)

    Unbalanced edge modes and topological phase transition in gated trilayer graphene Title: Unbalanced edge modes and topological phase transition in gated trilayer graphene Authors: ...

  20. Development of Dual-Gated Bilayer Graphene Device Structures...

    Office of Scientific and Technical Information (OSTI)

    Development of Dual-Gated Bilayer Graphene Device Structures. Citation Details In-Document Search Title: Development of Dual-Gated Bilayer Graphene Device Structures. Abstract not ...

  1. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR 2009 DOE Hydrogen Program and ...

  2. AgraGate Carbon Credits Corporation | Open Energy Information

    Open Energy Info (EERE)

    AgraGate Carbon Credits Corporation Jump to: navigation, search Name: AgraGate Carbon Credits Corporation Place: Des Moines, Iowa Zip: 50266 Product: Offset aggregators that work...

  3. Method for voltage-gated protein fractionation (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Method for voltage-gated protein fractionation Title: Method for voltage-gated protein fractionation We report unique findings on the voltage dependence of protein exclusion from ...

  4. Locking apparatus for gate valves

    DOE Patents [OSTI]

    Fabyan, Joseph; Williams, Carl W.

    1988-01-01

    A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing futher movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

  5. Locking apparatus for gate valves

    DOE Patents [OSTI]

    Fabyan, J.; Williams, C.W.

    A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing further movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

  6. Digital gate pulse generator for cycloconverter control

    DOE Patents [OSTI]

    Klein, Frederick F.; Mutone, Gioacchino A.

    1989-01-01

    The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

  7. Gates, Oregon: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    is a stub. You can help OpenEI by expanding it. Gates is a city in Linn County and Marion County, Oregon. It falls under Oregon's 4th congressional district and Oregon's 5th...

  8. Gating of the proton-gated ion channel from Gloeobacter violaceus at pH 4

    Office of Scientific and Technical Information (OSTI)

    as revealed by X-ray crystallography (Journal Article) | SciTech Connect Journal Article: Gating of the proton-gated ion channel from Gloeobacter violaceus at pH 4 as revealed by X-ray crystallography Citation Details In-Document Search Title: Gating of the proton-gated ion channel from Gloeobacter violaceus at pH 4 as revealed by X-ray crystallography Authors: Gonzalez-Gutierrez, Giovanni ; Cuello, Luis G. ; Nair, Satish K. ; Grosman, Claudio [1] ; TTU) [2] + Show Author Affiliations UIUC (

  9. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  10. Gate fidelity fluctuations and quantum process invariants

    SciTech Connect (OSTI)

    Magesan, Easwar; Emerson, Joseph [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Blume-Kohout, Robin [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2011-07-15

    We characterize the quantum gate fidelity in a state-independent manner by giving an explicit expression for its variance. The method we provide can be extended to calculate all higher order moments of the gate fidelity. Using these results, we obtain a simple expression for the variance of a single-qubit system and deduce the asymptotic behavior for large-dimensional quantum systems. Applications of these results to quantum chaos and randomized benchmarking are discussed.

  11. Optical gating of perylene bisimide fluorescence using

    Office of Scientific and Technical Information (OSTI)

    dithienylcyclopentene photochromic switches (Journal Article) | SciTech Connect Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches Citation Details In-Document Search Title: Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that

  12. David A Gates | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Gates Principal Research Physicist, Stellarator Physics Division Head, Advanced Projects Department David Gates is a principal research physicist for the advanced projects division of PPPL, and the stellarator physics leader at the Laboratory. In the latter capacity he leads collaborative efforts with the Wendelstein 7-X and Large Helical Device stellarator projects in Germany and Japan, respectively. Interests Stellarators Tokamaks Contact Information Phone: 609-243-2837 Email:

  13. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, T.E.

    1996-12-03

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.

  14. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1996-01-01

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance.

  15. Sliding-gate valve for use with abrasive materials

    DOE Patents [OSTI]

    Ayers, Jr., William J.; Carter, Charles R.; Griffith, Richard A.; Loomis, Richard B.; Notestein, John E.

    1985-01-01

    The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

  16. Gated IR Images of Shocked Surfaces

    SciTech Connect (OSTI)

    S. S. Lutz; W. D. Turley; P. M. Rightley; L. E. Primas

    2001-06-01

    Gated infrared (IR) images have been taken of a series of shocked surface geometries in tin. Metal coupons machined with steps and flats were mounted directly to the high explosive. The explosive was point-initiated and 500-ns to 1-microsecond-wide gated images of the target were taken immediately following shock breakout using a Santa Barbara Focalplane InSb camera (SBF-134). Spatial distributions of surface radiance were extracted from the images of the shocked samples and found to be non-single-valued. Several geometries were modeled using CTH, a two-dimensional Eulerian hydrocode.

  17. Chi-Nu "Gate Review" (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Chi-Nu "Gate Review" Citation Details In-Document Search Title: Chi-Nu "Gate Review" You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This...

  18. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 range (1-2...

  19. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is ... Now, for the first time, a group of researchers has obtained real-time oxidation results ...

  20. GATE Center of Excellence in Lightweight Materials and Manufacturing

    Broader source: Energy.gov (indexed) [DOE]

    Technologies | Department of Energy 6_vaidya_2012_p.pdf More Documents & Publications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence in Lightweight Materials and Manufacturing Technologies Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

  1. GATE Center of Excellence in Sustainable Vehicle Systems | Department of

    Broader source: Energy.gov (indexed) [DOE]

    Energy 4_haque_2012_p.pdf More Documents & Publications GATE Center of Excellence in Sustainable Vehicle Systems Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence in Sustainable Vehicle Systems Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems

  2. GATE: Energy Efficient Vehicles for Sustainable Mobility | Department of

    Broader source: Energy.gov (indexed) [DOE]

    Energy ti022_rizzoni_2012_p.pdf More Documents & Publications GATE: Energy Efficient Vehicles for Sustainable Mobility Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility Vehicle Technologies Office Merit Review 2015: GATE: Energy Efficient Vehicles for Sustainable Mobility

  3. Designing robust unitary gates: Application to concatenated composite pulses

    SciTech Connect (OSTI)

    Ichikawa, Tsubasa; Bando, Masamitsu; Kondo, Yasushi; Nakahara, Mikio

    2011-12-15

    We propose a simple formalism to design unitary gates robust against given systematic errors. This formalism generalizes our previous observation [Y. Kondo and M. Bando, J. Phys. Soc. Jpn. 80, 054002 (2011)] that vanishing dynamical phase in some composite gates is essential to suppress pulse-length errors. By employing our formalism, we derive a composite unitary gate which can be seen as a concatenation of two known composite unitary operations. The obtained unitary gate has high fidelity over a wider range of error strengths compared to existing composite gates.

  4. Method for voltage-gated protein fractionation

    DOE Patents [OSTI]

    Hatch, Anson; Singh, Anup K.

    2012-04-24

    We report unique findings on the voltage dependence of protein exclusion from the pores of nanoporous polymer exclusion membranes. The pores are small enough that proteins are excluded from passage with low applied electric fields, but increasing the field enables proteins to pass through. The requisite field necessary for a change in exclusion is protein-specific with a correlation to protein size. The field-dependence of exclusion is important to consider for preconcentration applications. The ability to selectively gate proteins at exclusion membranes is also a promising means for manipulating and characterizing proteins. We show that field-gated exclusion can be used to selectively remove proteins from a mixture, or to selectively trap protein at one exclusion membrane in a series.

  5. Gated monochromatic x-ray imager

    SciTech Connect (OSTI)

    Oertel, J.A.; Archuleta, T.; Clark, L.

    1995-09-01

    We have recently developed a gated monochromatic x-ray imaging diagnostic for the national Inertial-Confinement Fusion (ICF) program. This new imaging system will be one of the primary diagnostics to be utilized on University of Rochester`s Omega laser fusion facility. The new diagnostic is based upon a Kirkpatrick-Baez (KB) microscope dispersed by diffraction crystals, as first described by Marshall and Su. The dispersed images are gated by four individual proximity focused microchannel plates and recorded on film. Spectral coverage is tunable up to 8 keV, spectral resolution has been measured at 20 eV, temporal resolution is 80 ps, and spatial resolution is better than 10 {mu}m.

  6. Gated beam imager for heavy ion beams

    SciTech Connect (OSTI)

    Ahle, Larry; Hopkins, Harvey S.

    1998-12-10

    As part of the work building a small heavy-ion induction accelerator ring, or recirculator, at Lawrence Livermore National Laboratory, a diagnostic device measuring the four-dimensional transverse phase space of the beam in just a single pulse has been developed. This device, the Gated Beam Imager (GBI), consists of a thin plate filled with an array of 100-micron diameter holes and uses a Micro Channel Plate (MCP), a phosphor screen, and a CCD camera to image the beam particles that pass through the holes after they have drifted for a short distance. By time gating the MCP, the time evolution of the beam can also be measured, with each time step requiring a new pulse.

  7. Gated beam imager for heavy ion beams

    SciTech Connect (OSTI)

    Ahle, L.; Hopkins, H.S.

    1998-12-01

    As part of the work building a small heavy-ion induction accelerator ring, or recirculator, at Lawrence Livermore National Laboratory, a diagnostic device measuring the four-dimensional transverse phase space of the beam in just a single pulse has been developed. This device, the Gated Beam Imager (GBI), consists of a thin plate filled with an array of 100-micron diameter holes and uses a Micro Channel Plate (MCP), a phosphor screen, and a CCD camera to image the beam particles that pass through the holes after they have drifted for a short distance. By time gating the MCP, the time evolution of the beam can also be measured, with each time step requiring a new pulse. {copyright} {ital 1998 American Institute of Physics.}

  8. Cluster computing software for GATE simulations

    SciTech Connect (OSTI)

    Beenhouwer, Jan de; Staelens, Steven; Kruecker, Dirk; Ferrer, Ludovic; D'Asseler, Yves; Lemahieu, Ignace; Rannou, Fernando R.

    2007-06-15

    Geometry and tracking (GEANT4) is a Monte Carlo package designed for high energy physics experiments. It is used as the basis layer for Monte Carlo simulations of nuclear medicine acquisition systems in GEANT4 Application for Tomographic Emission (GATE). GATE allows the user to realistically model experiments using accurate physics models and time synchronization for detector movement through a script language contained in a macro file. The downside of this high accuracy is long computation time. This paper describes a platform independent computing approach for running GATE simulations on a cluster of computers in order to reduce the overall simulation time. Our software automatically creates fully resolved, nonparametrized macros accompanied with an on-the-fly generated cluster specific submit file used to launch the simulations. The scalability of GATE simulations on a cluster is investigated for two imaging modalities, positron emission tomography (PET) and single photon emission computed tomography (SPECT). Due to a higher sensitivity, PET simulations are characterized by relatively high data output rates that create rather large output files. SPECT simulations, on the other hand, have lower data output rates but require a long collimator setup time. Both of these characteristics hamper scalability as a function of the number of CPUs. The scalability of PET simulations is improved here by the development of a fast output merger. The scalability of SPECT simulations is improved by greatly reducing the collimator setup time. Accordingly, these two new developments result in higher scalability for both PET and SPECT simulations and reduce the computation time to more practical values.

  9. SU-E-T-350: Verification of Gating Performance of a New Elekta Gating Solution: Response Kit and Catalyst System

    SciTech Connect (OSTI)

    Xie, X; Cao, D; Housley, D; Mehta, V; Shepard, D

    2014-06-01

    Purpose: In this work, we have tested the performance of new respiratory gating solutions for Elekta linacs. These solutions include the Response gating and the C-RAD Catalyst surface mapping system.Verification measurements have been performed for a series of clinical cases. We also examined the beam on latency of the system and its impact on delivery efficiency. Methods: To verify the benefits of tighter gating windows, a Quasar Respiratory Motion Platform was used. Its vertical-motion plate acted as a respiration surrogate and was tracked by the Catalyst system to generate gating signals. A MatriXX ion-chamber array was mounted on its longitudinal-moving platform. Clinical plans are delivered to a stationary and moving Matrix array at 100%, 50% and 30% gating windows and gamma scores were calculated comparing moving delivery results to the stationary result. It is important to note that as one moves to tighter gating windows, the delivery efficiency will be impacted by the linac's beam-on latency. Using a specialized software package, we generated beam-on signals of lengths of 1000ms, 600ms, 450ms, 400ms, 350ms and 300ms. As the gating windows get tighter, one can expect to reach a point where the dose rate will fall to nearly zero, indicating that the gating window is close to beam-on latency. A clinically useful gating window needs to be significantly longer than the latency for the linac. Results: As expected, the use of tighter gating windows improved delivery accuracy. However, a lower limit of the gating window, largely defined by linac beam-on latency, exists at around 300ms. Conclusion: The Response gating kit, combined with the C-RAD Catalyst, provides an effective solution for respiratorygated treatment delivery. Careful patient selection, gating window design, even visual/audio coaching may be necessary to ensure both delivery quality and efficiency. This research project is funded by Elekta.

  10. Thermosensitive gating effect and selective gas adsorption in...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage Previous Next List Dan Zhao , Daqiang Yuan , Rajamani Krishna , Jasper M. van Baten and...

  11. University of Illinois at Urbana-Champaign's GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines 2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies ...

  12. Gates County, North Carolina: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Gates County, North Carolina: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 36.4202077, -76.6874701 Show Map Loading map......

  13. High Temperature, High Voltage Fully Integrated Gate Driver Circuit...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    D.C. PDF icon ape003tolbert2010p.pdf More Documents & Publications High Temperature, High Voltage Fully Integrated Gate Driver Circuit Wide Bandgap Materials Smart ...

  14. High Temperature, High Voltage Fully Integrated Gate Driver Circuit...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    -- Washington D.C. PDF icon ape03marlino.pdf More Documents & Publications High Temperature, High Voltage Fully Integrated Gate Driver Circuit Smart Integrated Power Module ...

  15. GATE Center of Excellence in Lightweight Materials and Manufacturing...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Technologies Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit...

  16. Vehicle Technologies Office Merit Review 2015: Gate Driver Optimizatio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Gate Driver Optimization for WBG Applications Vehicle Technologies Office Merit Review ... Presentation given by Oak Ridge National Laboratory at 2015 DOE Hydrogen and Fuel Cells ...

  17. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Energy Savers [EERE]

    PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah...

  18. Penn State DOE Graduate Automotive Technology Education (Gate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Penn State DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems Penn State DOE Graduate Automotive Technology Education ...

  19. GATE Global Alternative Energy Holding AG | Open Energy Information

    Open Energy Info (EERE)

    Energy Holding AG Place: Wrzburg, Bavaria, Germany Zip: 97080 Product: Germany-based biodiesel producer. References: GATE Global Alternative Energy Holding AG1 This article...

  20. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol ...

  1. Speed control system for an access gate

    DOE Patents [OSTI]

    Bzorgi, Fariborz M.

    2012-03-20

    An access control apparatus for an access gate. The access gate typically has a rotator that is configured to rotate around a rotator axis at a first variable speed in a forward direction. The access control apparatus may include a transmission that typically has an input element that is operatively connected to the rotator. The input element is generally configured to rotate at an input speed that is proportional to the first variable speed. The transmission typically also has an output element that has an output speed that is higher than the input speed. The input element and the output element may rotate around a common transmission axis. A retardation mechanism may be employed. The retardation mechanism is typically configured to rotate around a retardation mechanism axis. Generally the retardation mechanism is operatively connected to the output element of the transmission and is configured to retard motion of the access gate in the forward direction when the first variable speed is above a control-limit speed. In many embodiments the transmission axis and the retardation mechanism axis are substantially co-axial. Some embodiments include a freewheel/catch mechanism that has an input connection that is operatively connected to the rotator. The input connection may be configured to engage an output connection when the rotator is rotated at the first variable speed in a forward direction and configured for substantially unrestricted rotation when the rotator is rotated in a reverse direction opposite the forward direction. The input element of the transmission is typically operatively connected to the output connection of the freewheel/catch mechanism.

  2. Modeling gated neutron images of THD capsules

    SciTech Connect (OSTI)

    Wilson, Douglas Carl; Grim, Gary P; Tregillis, Ian L; Wilke, Mark D; Morgan, George L; Loomis, Eric N; Wilde, Carl H; Oertel, John A; Fatherley, Valerie E; Clark, David D; Schmitt, Mark J; Merrill, Frank E; Wang, Tai - Sen F; Danly, Christopher R; Batha, Steven H; Patel, M; Sepke, S; Hatarik, R; Fittinghoff, D; Bower, D; Marinak, M; Munro, D; Moran, M; Hilko, R; Frank, M; Buckles, R

    2010-01-01

    Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

  3. Gate Hours & Services | Stanford Synchrotron Radiation Lightsource

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gate Hours & Services Sand Hill Road Main Gate Open 24 hours a day, 7 days a week 650-926-2551 Alert URA or User Check-In Coordinator Jackie Kerlegan before traveling to SLAC. SLAC has proximity card readers at the entrances from Sand Hill Road and Alpine Road as well as at Security Gate 17 and Sector 30. If you do not have an ID badge with proximity access issued by Security after October 2014, stop first at the SLAC Security Office Building 235 during office hours which are 7 am-12 noon

  4. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Looking at Transistor Gate Oxide Formation in Real Time Print Wednesday, 25 June 2008 00:00 The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under

  5. Stage Gate Review Guide for the Biomass Program | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Biomass Program Stage Gate Review Guide for the Biomass Program Stage Gate Management in the Biomass Program (now the Bioenergy Technologies Office), a document from February 2005. PDF icon Stage Gate Review Guide More Documents & Publications Stage Gate Review Guide for the Industrial Technologies Program 2009 Biochemical Conversion Platform Review Report 2009 Thermochemical Conversion Platform Review Report

  6. Ultrafast terahertz gating of the polarization and giant nonlinear...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Ultrafast terahertz gating of the polarization and giant nonlinear optical response in BiFeO3 thin films Citation Details In-Document Search Title: Ultrafast ...

  7. Bill Gates visit to Idaho validates innovation role for national...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    FOR IMMEDIATE RELEASE Oct. 24, 2013 NEWS MEDIA CONTACTS: Amy Lientz, 208-520-7718, amy.lientz@inl.gov Teri Ehresman, 208-526-7785, teri.ehresman@inl.gov Bill Gates visit to Idaho...

  8. Liquid-based gating mechanism with tunable multiphase selectivity...

    Office of Scientific and Technical Information (OSTI)

    uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open ...

  9. Isolated Photosystem I Reaction Centers on a Functionalized Gated High

    Office of Scientific and Technical Information (OSTI)

    Electron Mobility Transistor (Journal Article) | SciTech Connect Isolated Photosystem I Reaction Centers on a Functionalized Gated High Electron Mobility Transistor Citation Details In-Document Search Title: Isolated Photosystem I Reaction Centers on a Functionalized Gated High Electron Mobility Transistor In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon

  10. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-09-08

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling. 25 figs.

  11. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1998-09-08

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna (10), so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive (24) and transmit cavities (22) by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling.

  12. Gated integrator with signal baseline subtraction

    DOE Patents [OSTI]

    Wang, Xucheng

    1996-01-01

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window.

  13. Gated integrator with signal baseline subtraction

    DOE Patents [OSTI]

    Wang, X.

    1996-12-17

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window. 5 figs.

  14. Rapidly reconfigurable all-optical universal logic gate

    DOE Patents [OSTI]

    Goddard, Lynford L.; Bond, Tiziana C.; Kallman, Jeffrey S.

    2010-09-07

    A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

  15. Innovative secondary support systems for gate roads

    SciTech Connect (OSTI)

    Barczak, T.; Molinda, G.M.; Zelanko, J.C.

    1996-12-31

    With the development of the shield support, the primary requirement for successful ground control in longwall mining is to provide stable gate road and bleeder entries. Wood cribbing has been the dominant form of secondary and supplemental support. However, the cost and limited availability of timber, along with the poor performance of softwood crib supports, has forced western U.S. mines to explore the utilization of support systems other than conventional wood cribbing. The recent success of cable bolts has engendered much interest from western operators. Eastern U.S. coal operators are also now experimenting with various intrinsic and freestanding alternative support systems that provide effective ground control while reducing material handling costs and injuries. These innovative freestanding support systems include (1) {open_quotes}The Can{close_quotes} support by Burrell Mining Products International, Inc., (2) Hercules and Link-N-Lock wood cribs and Propsetter supports by Strata Products (USA) Inc., (3) Variable Yielding Crib and Power Crib supports by Mountainland Support Systems, (4) the Confined Core Crib developed by Southern Utah Fuels Corporation; and (5) the MEGA prop by MBK Hydraulik. This paper assesses design considerations and compares the performance and application of these alternative secondary support systems. Support performance in the form of load-displacement behavior is compared to conventional wood cribbing. Much of the data was developed through full-scale tests conducted by the U.S. Bureau of Mines (USBM) at the Strategic Structures Testing Laboratory in the unique Mine Roof Simulator load frame at the Pittsburgh Research Center. A summary of current mine experience with these innovative supports is also documented.

  16. Deterministic and cascadable conditional phase gate for photonic qubits

    SciTech Connect (OSTI)

    Chudzicki, Christopher; Chuang, Isaac; Shapiro, Jeffrey H.

    2014-12-04

    Previous analyses of conditional ?{sub NL}-phase gates for photonic qubits that treat crossphase modulation (XPM) in a causal, multimode, quantum field setting suggest that a large (?? rad) nonlinear phase shift is always accompanied by fidelity-degrading noise [J. H. Shapiro, Phys. Rev. A 73, 062305 (2006); J. Gea-Banacloche, Phys. Rev. A 81, 043823 (2010)]. Using an atomic V-system to model an XPM medium, we present a conditional phase gate that, for sufficiently small nonzero ?{sub NL}, has high fidelity. The gate is made cascadable by using a special measurement, principal mode projection, to exploit the quantum Zeno effect and preclude the accumulation of fidelity-degrading departures from the principal-mode Hilbert space when both control and target photons illuminate the gate. The nonlinearity of the V-system we study is too weak for this particular implementation to be practical. Nevertheless, the idea of cascading through principal mode projection is of potential use to overcome fidelity degrading noise for a wide variety of nonlinear optical primitive gates.

  17. Effects of breathing variation on gating window internal target volume in respiratory gated radiation therapy

    SciTech Connect (OSTI)

    Cai Jing; McLawhorn, Robert; Read, Paul W.; Larner, James M.; Yin, Fang-fang; Benedict, Stanley H.; Sheng, Ke

    2010-08-15

    Purpose: To investigate the effects of breathing variation on gating window internal target volume (ITV{sub GW}) in respiratory gated radiation therapy. Method and Materials: Two-dimensional dynamic MRI (dMRI) of lung motion was acquired in ten volunteers and eight lung cancer patients. Resorted dMRI using 4DCT acquisition method (RedCAM) was generated for selected subjects by simulating the image rebinning process. A dynamic software generated phantom (dSGP) was created by moving a solid circle (to mimic the ''tumor'') with dMRI-determined motion trajectories. The gating window internal target area (ITA{sub GW}, 2D counterpart of ITV{sub GW}) was determined from both RedCAM and dSGP/dMRI. Its area (A), major axis (L1), minor axis (L2), and similarity (S) were calculated and compared. Results: In the phantom study of 3 cm tumor, measurements of the ITA{sub GW} from dSGP (A=10.0{+-}1.3 cm{sup 2}, L1=3.8{+-}0.4 cm, and L2=3.3{+-}0.1 cm) are significantly (p<0.001) greater than those from RedCAM (A=8.5{+-}0.7 cm{sup 2}, L1=3.5{+-}0.2 cm, and L2=3.1{+-}0.1 cm). Similarly, the differences are significantly greater (p<0.001) for the 1 cm tumor (A=1.9{+-}0.5 cm{sup 2}, L1=1.9{+-}0.4 cm, and L2=1.3{+-}0.1 cm in dSGP; A=1.3{+-}0.1 cm{sup 2}, L1=1.5{+-}0.2 cm, and L2=1.1{+-}0.1 cm in RedCAM). In patient studies, measurements of the ITA{sub GW} from dMRI (A=15.5{+-}8.2 cm{sup 2}, L1=5.0{+-}1.1 cm, and L2=3.8{+-}1.2 cm) are also significantly greater (p<0.05) than those from RedCAM (A=13.2{+-}8.5 cm{sup 2}, L1=4.3{+-}1.4 cm, and L2=3.7{+-}1.2 cm). Similarities were 0.9{+-}0.1, 0.8{+-}0.1, and 0.8{+-}0.1 in the 3 cm tumor phantom, 1 cm tumor phantom, and patient studies, respectively. Conclusion: ITV{sub GW} can be underestimated by 4DCT due to breathing variations. An additional margin may be needed to account for this potential error in generating a PTV{sub GW}. Cautions need to be taken when generating ITV{sub GW} from 4DCT in respiratory gated radiation therapy, especially for small tumors (<3 cm) with a large motion range (>1 cm).

  18. Ligand-gated Diffusion Across the Bacterial Outer Membrane

    SciTech Connect (OSTI)

    B Lepore; M Indic; H Pham; E Hearn; D Patel; B van den Berg

    2011-12-31

    Ligand-gated channels, in which a substrate transport pathway is formed as a result of the binding of a small-molecule chemical messenger, constitute a diverse class of membrane proteins with important functions in prokaryotic and eukaryotic organisms. Despite their widespread nature, no ligand-gated channels have yet been found within the outer membrane (OM) of Gram-negative bacteria. Here we show, using in vivo transport assays, intrinsic tryptophan fluorescence and X-ray crystallography, that high-affinity (submicromolar) substrate binding to the OM long-chain fatty acid transporter FadL from Escherichia coli causes conformational changes in the N terminus that open up a channel for substrate diffusion. The OM long-chain fatty acid transporter FadL from E. coli is a unique paradigm for OM diffusion-driven transport, in which ligand gating within a {beta}-barrel membrane protein is a prerequisite for channel formation.

  19. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  20. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  1. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  2. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  3. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  4. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  5. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  6. Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

    SciTech Connect (OSTI)

    Wang, Yang; Chen, Xiaolong; Ye, Weiguang; Wu, Zefei; Han, Yu; Han, Tianyi; He, Yuheng; Cai, Yuan; Wang, Ning

    2014-12-15

    High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga{sup +} beam etching process.

  7. Fast Out of the Gate: How Developing Asian Countries can Prepare...

    Open Energy Info (EERE)

    (Redirected from Fast Out of the Gate: How Developing Asian Countries can Prepare to Access International Green Growth Financing)...

  8. Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge

    SciTech Connect (OSTI)

    Tuenge, J. R.

    2012-09-01

    GATEWAY program report on the technical feasibility of LED roadway lighting on the Golden Gate Bridge in San Francisco, CA.

  9. Gating of high-mobility InAs metamorphic heterostructures

    SciTech Connect (OSTI)

    Shabani, J.; McFadden, A. P.; Shojaei, B.; Palmstrøm, C. J.

    2014-12-29

    We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In{sub 0.75}Ga{sub 0.25}As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In{sub 0.75}Al{sub 0.25}As as the barrier without an In{sub 0.75}Ga{sub 0.25}As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.

  10. Temperature-controlled molecular depolarization gates in nuclear magnetic resonance

    SciTech Connect (OSTI)

    Schroder, Leif; Schroder, Leif; Chavez, Lana; Meldrum, Tyler; Smith, Monica; Lowery, Thomas J.; E. Wemmer, David; Pines, Alexander

    2008-02-27

    Down the drain: Cryptophane cages in combination with selective radiofrequency spin labeling can be used as molecular 'transpletor' units for transferring depletion of spin polarization from a hyperpolarized 'source' spin ensemble to a 'drain' ensemble. The flow of nuclei through the gate is adjustable by the ambient temperature, thereby enabling controlled consumption of hyperpolarization.

  11. Optimal gate-width setting for passive neutrons multiplicity counting

    SciTech Connect (OSTI)

    Croft, Stephen; Evans, Louise G; Schear, Melissa A

    2010-01-01

    When setting up a passive neutron coincidence counter it is natural to ask what coincidence gate settings should be used to optimize the counting precision. If the gate width is too short then signal is lost and the precision is compromised because in a given period only a few coincidence events will be observed. On the other hand if the gate is too large the signal will be maximized but it will also be compromised by the high level of random pile-up or Accidental coincidence events which must be subtracted. In the case of shift register electronics connected to an assay chamber with an exponential dieaway profile operating in the regime where the Accidentals rate dominates the Reals coincidence rate but where dead-time is not a concern, simple arguments allow one to show that the relative precision on the net Reals rate is minimized when the coincidence gate is set to about 1.2 times the lie dieaway time of the system. In this work we show that making the same assumptions it is easy to show that the relative precision on the Triples rates is also at a minimum when the relative precision of the Doubles (or Reals) is at a minimum. Although the analysis is straightforward to our knowledge such a discussion has not been documented in the literature before. Actual measurement systems do not always behave in the ideal we choose to model them. Fortunately however the variation in the relative precision as a function of gate width is rather flat for traditional safeguards counters and so the performance is somewhat forgiving of the exact choice. The derivation further serves to delineate the important parameters which determine the relative counting precision of the Doubles and Triples rates under the regime considered. To illustrate the similarities and differences we consider the relative standard deviation that might be anticipated for a passive correlation count of an axial section of a spent nuclear fuel assembly under practically achievable conditions.

  12. A Compact Reactor Gate Discharge Monitor for Spent Fuel.

    SciTech Connect (OSTI)

    Franco, J. B.; Menlove, Howard O.; Eccleston, G. W.; Miller, M. C.

    2005-01-01

    This paper presents a new design for a reactor gate discharge monitor that has evolved from the baseline discharge monitors used at the Fugen and Tokai-1 reactors in Japan. The main design innovation is the ability to determine direction-of-motion of spent fuel using a single sensor module, as opposed to the two modules used in both baseline design systems. Use of a single module reduces the final system complexity and weight significantly without compromising functionality. The reactor gate discharge monitor uses standard International Atomic Energy Agency (IAEA) hardware and software components. The requirements to determine direction-of-motion from a single module precipitated several development efforts described herein in both the MiniGRAND data acquisition hardware and in the uninterruptible power supply source.

  13. Unitary-gate synthesis for continuous-variable systems

    SciTech Connect (OSTI)

    Fiurasek, Jaromir

    2003-08-01

    We investigate the synthesis of continuous-variable two-mode unitary gates in the setting where two modes A and B are coupled by a fixed quadratic Hamiltonian H. The gate synthesis consists of a sequence of evolutions governed by Hamiltonian H, which are interspaced by local phase shifts applied to A and B. We concentrate on protocols that require the minimum number of necessary steps and we show how to implement the beam splitter and the two-mode squeezer in just three steps. Particular attention is paid to Hamiltonian x{sub A}p{sub B} that describes the effective off-resonant interaction of light with the collective atomic spin.

  14. Negative differential transconductance in electrolyte-gated ruthenate

    SciTech Connect (OSTI)

    Hassan, Muhammad Umair; Dhoot, Anoop Singh; Wimbush, Stuart C.

    2015-01-19

    We report on a study of electric field-induced doping of the highly conductive ruthenate SrRuO{sub 3} using an ionic liquid as the gate dielectric in a field-effect transistor configuration. Two distinct carrier transport regimes are identified for increasing positive gate voltage in thin (10 nm) films grown heteroepitaxially on SrTiO{sub 3} substrates. For V{sub g} = 2 V and lower, the sample shows an increased conductivity of up to 13%, as might be expected for electron doping of a metal. At higher V{sub g} = 2.5 V, we observe a large decrease in electrical conductivity of >20% (at 4.2 K) due to the prevalence of strongly blocked conduction pathways.

  15. Quantum gate using qubit states separated by terahertz

    SciTech Connect (OSTI)

    Toyoda, Kenji; Urabe, Shinji [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); JST-CREST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012 (Japan); Haze, Shinsuke [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Yamazaki, Rekishu [JST-CREST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012 (Japan)

    2010-03-15

    A two-qubit quantum gate is realized using electronically excited states in a single ion with an energy separation on the order of a terahertz times the Planck constant as a qubit. Two phase-locked lasers are used to excite a stimulated Raman transition between two metastable states D{sub 3/2} and D{sub 5/2} separated by 1.82 THz in a single trapped {sup 40}Ca{sup +} ion to construct a qubit, which is used as the target bit for the Cirac-Zoller two-qubit controlled NOT gate. Quantum dynamics conditioned on a motional qubit is clearly observed as a fringe reversal in Ramsey interferometry.

  16. Microsoft Word - S.J. Gates-1.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    E. Hatcher Science on Saturday Lecture Series 07 February 2015 IS SUSY THE GUARDIAN OF OUR REALITY FROM OBLIVION? S. James Gates, Jr. Distinguished University Professor, University System of Maryland Regents Professor, John S. Toll Professor of Physics, and Center for String & Particle Theory Director University of Maryland, College Park, MD ABSTRACT: The proposed property of supersymmetry (SUSY) is being searched for by the LHC in its newest scientific planned run. What is SUSY? How do

  17. Amorphorized tantalum-nickel binary films for metal gate applications

    SciTech Connect (OSTI)

    Ouyang, Jiaomin; Wongpiya, Ranida; Clemens, Bruce M.; Deal, Michael D.; Nishi, Yoshio

    2015-04-13

    Amorphous metal gates have the potential to eliminate the work function variation due to grain orientation for poly-crystalline metal gate materials, which is a leading contributor to threshold voltage variation for small transistors. Structural and electrical properties of TaNi alloys using co-sputtering with different compositions and multilayer structures with different thicknesses are investigated in this work. It is found that TaNi films are amorphous for a wide range of compositions as deposited, and the films stay amorphous after annealing at 400?C in RTA for 1?min and up to at least 700?C depending on the composition. The amorphous films eventually crystallize into Ni, Ta, and TaNi{sub 3} phases at high enough temperature. For multilayer Ta/Ni structures, samples with individual layer thickness of 0.12?nm and 1.2?nm are amorphous as deposited due to intermixing during deposition, and stay amorphous until annealed at 500?C. The resistivity of the films as-deposited are around 200 ??cm. The work function of the alloy is fixed at close to the Ta work function of 4.6?eV for a wide range of compositions. This is attributed to the segregation of Ta at the metal-oxide interface, which is confirmed by XPS depth profile. Overall, the excellent thermal stability and low resistivity makes this alloy system a promising candidate for eliminating work function variation for gate last applications, as compared to crystalline Ta or TiN gates.

  18. Self-terminating diffraction gates femtosecond X-ray nanocrystallography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    measurements Self-terminating diffraction gates femtosecond X-ray nanocrystallography measurements Authors: Barty, A., Caleman, C., Aquila, A., Timneanu, N., Lomb, L., White, T. A., Andreasson, J., Arnlund, D., Bajt, S., Barends, T. R. M., Barthelmess, M., Bogan, M. J., Bostedt, C., Bozek, J. D., Coffee, R., Coppola, N., Davidsson, J., DePonte, D. P., Doak, R. B., Ekeberg, T., Elser, V., Epp, S. W., Erk, B., Fleckenstein, H., Foucar, L., Fromme, P., Graafsma, H., Gumprecht, L., Hajdu, J.,

  19. Gate valve and motor-operator research findings

    SciTech Connect (OSTI)

    Steele, R. Jr.; DeWall, K.G.; Watkins, J.C.; Russell, M.J.; Bramwell, D.

    1995-09-01

    This report provides an update on the valve research being sponsored by the US Nuclear Regulatory Commission (NRC) and conducted at the Idaho National Engineering Laboratory (INEL). The research addresses the need to provide assurance that motor-operated valves can perform their intended safety function, usually to open or close against specified (design basis) flow and pressure loads. This report describes several important developments: Two methods for estimating or bounding the design basis stem factor (in rising-stem valves), using data from tests less severe than design basis tests; a new correlation for evaluating the opening responses of gate valves and for predicting opening requirements; an extrapolation method that uses the results of a best effort flow test to estimate the design basis closing requirements of a gate valve that exhibits atypical responses (peak force occurs before flow isolation); and the extension of the original INEL closing correlation to include low- flow and low-pressure loads. The report also includes a general approach, presented in step-by-step format, for determining operating margins for rising-stem valves (gate valves and globe valves) as well as quarter-turn valves (ball valves and butterfly valves).

  20. Gate dielectric degradation: Pre-existing vs. generated defects

    SciTech Connect (OSTI)

    Veksler, Dmitry E-mail: gennadi.bersuker@sematech.org; Bersuker, Gennadi E-mail: gennadi.bersuker@sematech.org

    2014-01-21

    We consider the possibility that degradation of the electrical characteristics of high-k gate stacks under low voltage stresses of practical interest is caused primarily by activation of pre-existing defects rather than generation of new ones. In nFETs in inversion, in particular, defect activation is suggested to be associated with the capture of an injected electron: in this charged state, defects can participate in a fast exchange of charge carriers with the carrier reservoir (substrate or gate electrode) that constitutes the physical process underlying a variety of electrical measurements. The degradation caused by the activation of pre-existing defects, as opposed to that of new defect generation, is both reversible and exhibits a tendency to saturate through the duration of stress. By using the multi-phonon assisted charge transport description, it is demonstrated that the trap activation concept allows reproducing a variety of experimental results including stress time dependency of the threshold voltage, leakage current, charge pumping current, and low frequency noise. Continuous, long-term degradation described by the power law time dependency is shown to be determined by the activation of defects located in the interfacial SiO{sub 2} layer of the high-k gate stacks. The findings of this study can direct process optimization efforts towards reduction of as-grown precursors of the charge trapping defects as the major factor affecting reliability.

  1. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Contolini, Robert J.

    2001-01-01

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  2. Optimization efforts in gated x-ray intensifiers (Conference) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect Optimization efforts in gated x-ray intensifiers Citation Details In-Document Search Title: Optimization efforts in gated x-ray intensifiers Gated x-ray intensifiers are often primary imaging diagnostics in high-energy-density-physics and inertial confinement fusion experiments. Improvements in resolution and background suppression can be achieved by electron focusing and improved phosphor screens. Efforts have been directed at improving luminosity, resolution, and decreased

  3. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) | Department of Energy MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System

  4. Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape

    Broader source: Energy.gov [DOE]

    Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

  5. University of Illinois at Urbana-Champaigns GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines 2009 DOE Hydrogen Program and Vehicle Technologies Program Annual ...

  6. Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    - Bart Gordon, K&L Gates, Partner; Former Representative from Tennessee Stefan Heck, McKinsey & Co., Director, Leader of Global Cleantech Practice Carrie Houtman, The Dow Chemical...

  7. Sandia Energy - ECIS and i-GATE: Innovation Hub Connects Clean...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    support system to accelerate the commercialization of innovative technologies related to green transportation and clean energy. There are now eight i-GATE clients developing fuel...

  8. Reduction of skin effect losses in double-level-T-gate structure

    SciTech Connect (OSTI)

    Mikulics, M. Hardtdegen, H.; Arango, Y. C.; Adam, R.; Fox, A.; Grützmacher, D.; Gregušová, D.; Novák, J.; Stanček, S.; Kordoš, P.; Sofer, Z.; Juul, L.; Marso, M.

    2014-12-08

    We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L{sub g} = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 μm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f{sub max} value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

  9. Nonadiabatic molecular orientation by polarization-gated ultrashort laser pulses

    SciTech Connect (OSTI)

    Chen Cheng; Wu Jian; Zeng Heping [State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062 (China)

    2010-09-15

    We show that the nonadiabatic orientation of diatomic polar molecules can be controlled by polarization-gated ultrashort laser pulses. By finely adjusting the time interval between two circularly polarized pulses of different wavelengths but the same helicity, the orientation direction of the molecules can be twirled. A cloverlike potential is created by using two circularly polarized laser pulses of different wavelengths and opposite helicity, leading to multidirectional molecular orientation along the potential wells, which can be well revealed by a high-order statistics metric of <>.

  10. Ultrafast terahertz gating of the polarization and giant nonlinear optical

    Office of Scientific and Technical Information (OSTI)

    response in BiFeO3 thin films (Journal Article) | SciTech Connect Title: Ultrafast terahertz gating of the polarization and giant nonlinear optical response in BiFeO3 thin films In this article, terahertz pulses are applied as an all-optical bias to ferroelectric thin-film BiFeO3 while monitoring the time-dependent ferroelectric polarization through its nonlinear optical response. Modulations in the intensity of the second harmonic light generated by the film correspond to on-off ratios of

  11. Ultrafast terahertz gating of the polarization and giant nonlinear optical

    Office of Scientific and Technical Information (OSTI)

    response in BiFeO3 thin films (Journal Article) | SciTech Connect This content will become publicly available on September 21, 2016 Title: Ultrafast terahertz gating of the polarization and giant nonlinear optical response in BiFeO3 thin films Terahertz pulses are applied as an all-optical bias to ferroelectric thin-film BiFeO3 while monitoring the time-dependent ferroelectric polarization through its nonlinear optical response. Modulations in the intensity of the second harmonic light

  12. SU-E-J-45: Design and Study of An In-House Respiratory Gating Phantom Platform for Gated Radiotherapy

    SciTech Connect (OSTI)

    Senthilkumar, S

    2014-06-01

    Purpose: The main purpose of this work was to develop an in-house low cost respiratory motion phantom platform for testing the accuracy of the gated radiotherapy system and analyze the dosimetric difference during gated radiotherapy. Methods: An in-house respiratory motion platform(RMP) was designed and constructed for testing the targeting accuracy of respiratory tracking system. The RMP consist of acrylic Chest Wall Platform, 2 DC motors, 4 IR sensors, speed controller circuit, 2 LED and 2 moving rods inside the RMP. The velocity of the movement can be varied from 0 to 30 cycles per minute. The platform mounted to a base using precision linear bearings. The base and platform are made of clear, 15mm thick polycarbonate plastic and the linear ball bearings are oriented to restrict the platform to a movement of approximately 50mm up and down with very little friction. Results: The targeting accuracy of the respiratory tracking system was evaluated using phantom with and without respiratory movement with varied amplitude. We have found the 5% dose difference to the PTV during the movement in comparison with stable PTV. The RMP can perform sinusoidal motion in 1D with fixed peak to peak motion of 5 to 50mm and cycle interval from 2 to 6 seconds. The RMP was designed to be able to simulate the gross anatomical anterior posterior motion attributable to respiration-induced motion of the thoracic region. Conclusion: The unique RMP simulates breathing providing the means to create a comprehensive program for commissioning, training, quality assurance and dose verification of gated radiotherapy treatments. Create the anterior/posterior movement of a target over a 5 to 50 mm distance to replicate tumor movement. The targeting error of the respiratory tracking system is less than 1.0 mm which shows suitable for clinical treatment with highly performance.

  13. Workshop on gate valve pressure locking and thermal binding

    SciTech Connect (OSTI)

    Brown, E.J.

    1995-07-01

    The purpose of the Workshop on Gate Valve Pressure Locking and Thermal Binding was to discuss pressure locking and thermal binding issues that could lead to inoperable gate valves in both boiling water and pressurized water reactors. The goal was to foster exchange of information to develop the technical bases to understand the phenomena, identify the components that are susceptible, discuss actual events, discuss the safety significance, and illustrate known corrective actions that can prevent or limit the occurrence of pressure locking or thermal binding. The presentations were structured to cover U.S. Nuclear Regulatory Commission staff evaluation of operating experience and planned regulatory activity; industry discussions of specific events, including foreign experience, and efforts to determine causes and alleviate the affects; and valve vendor experience and recommended corrective action. The discussions indicated that identifying valves susceptible to pressure locking and thermal binding was a complex process involving knowledge of components, systems, and plant operations. The corrective action options are varied and straightforward.

  14. Coherent molecular transistor: Control through variation of the gate wave function

    SciTech Connect (OSTI)

    Ernzerhof, Matthias

    2014-03-21

    In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

  15. Gated frequency-resolved optical imaging with an optical parametric amplifier

    DOE Patents [OSTI]

    Cameron, Stewart M.; Bliss, David E.; Kimmel, Mark W.; Neal, Daniel R.

    1999-01-01

    A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media.

  16. Gated frequency-resolved optical imaging with an optical parametric amplifier

    DOE Patents [OSTI]

    Cameron, S.M.; Bliss, D.E.; Kimmel, M.W.; Neal, D.R.

    1999-08-10

    A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media. 13 figs.

  17. GATE Center for Automotive Fuel Cell Systems at Virginia Tech | Department

    Broader source: Energy.gov (indexed) [DOE]

    of Energy 11 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation PDF icon ti011_nelson_2011_o.pdf More Documents & Publications GATE Center for Automotive Fuel Cell Systems at Virginia Tech Penn State DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems

  18. GATE Center for Automotive Fuel Cell Systems at Virginia Tech | Department

    Broader source: Energy.gov (indexed) [DOE]

    of Energy 09 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. PDF icon ti_08_nelson.pdf More Documents & Publications GATE Center for Automotive Fuel Cell Systems at Virginia Tech PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR

  19. A proposal for the realization of universal quantum gates via superconducting qubits inside a cavity

    SciTech Connect (OSTI)

    Obada, A.-S.F.; Hessian, H.A.; Mohamed, A.-B.A.; Community College, Salman Bin Abdulaziz University, Al-Aflaj ; Homid, Ali H.

    2013-07-15

    A family of quantum logic gates is proposed via superconducting (SC) qubits coupled to a SC-cavity. The Hamiltonian for SC-charge qubits inside a single mode cavity is considered. Three- and two-qubit operations are generated by applying a classical magnetic field with the flux. Therefore, a number of quantum logic gates are realized. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates. -- Highlights: A family of quantum logic gates is proposed via SC-qubits coupled to a cavity. Three- and two-qubit operations are generated via a classical field with the flux. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates.

  20. Quantum gates controlled by spin chain soliton excitations

    SciTech Connect (OSTI)

    Cuccoli, Alessandro; Nuzzi, Davide; Vaia, Ruggero; Verrucchi, Paola

    2014-05-07

    Propagation of soliton-like excitations along spin chains has been proposed as a possible way for transmitting both classical and quantum information between two distant parties with negligible dispersion and dissipation. In this work, a somewhat different use of solitons is considered. Solitons propagating along a spin chain realize an effective magnetic field, well localized in space and time, which can be exploited as a means to manipulate the state of an external spin (i.e., a qubit) that is weakly coupled to the chain. We have investigated different couplings between the qubit and the chain, as well as different soliton shapes, according to a Heisenberg chain model. It is found that symmetry properties strongly affect the effectiveness of the proposed scheme, and the most suitable setups for implementing single qubit quantum gates are singled out.

  1. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, D.K.; Potter, T.F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

  2. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, David K.; Potter, Thomas F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

  3. Hazardous waste dislodging and conveyance: The confined sluicing method

    SciTech Connect (OSTI)

    Summers, D.A.; Fossey, R.D.; Mann, M.D.; Blaine, J.G. [Univ. of Missouri, Rolla, MO (United States). High Pressure Waterjet Lab.; Rinker, M.W. [Pacific Northwest Lab., Richland, WA (United States)

    1994-09-01

    This report describes an investigation of a means for dislodging and conveying waste currently stored in underground storage tanks. A series of experiments have been carried out to evaluate the potential of a medium pressure, medium flow rate cutting system as a means of dislodging the waste. It has been found that waterjets at a pressure of 10,000 psi can effectively cut the material which has been chosen to simulate the hardened saltcake within the storage tanks. Based on a parameterization test it has thus been calculated that an inlet flow volume of approximately 30 gallons per minute will be sufficient to excavate 30 gallons per minute of waste from a tank. In order to transport the resulting slurry from the tank, a modified jet pump has been developed and has demonstrated its capability of conveying fluid and waste particles, up to one inch in diameter, to a height of more than 60 feet. Experiments were conducted to examine different configurations to achieve the production levels required for waste removal and to clean the walls of residual material. It was found more effective to clean the walls using an inclined angle of impact rather than a perpendicular angle of impact in order to provide a safeguard against driving the water through any cracks in the containment. It was demonstrated that excavation can take place with almost total immediate extraction of the water and debris from the cutting process. The results have qualitatively shown the potential of a medium pressure waterjet system for achieving the required results for underground storage tank waste retrieval.

  4. Design of a spin-wave majority gate employing mode selection

    SciTech Connect (OSTI)

    Klingler, S. Pirro, P.; Brcher, T.; Leven, B.; Hillebrands, B.; Chumak, A. V.

    2014-10-13

    The design of a microstructured, fully functional spin-wave majority gate is presented and studied using micromagnetic simulations. This all-magnon logic gate consists of three-input waveguides, a spin-wave combiner, and an output waveguide. In order to ensure the functionality of the device, the output waveguide is designed to perform spin-wave mode selection. We demonstrate that the gate evaluates the majority of the input signals coded into the spin-wave phase. Moreover, the all-magnon data processing device is used to perform logic AND-, OR-, NAND-, and NOR- operations.

  5. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    SciTech Connect (OSTI)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  6. VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy March 5, 2012 - 1:24pm Addthis Secretary Chu sits down with Microsoft Founder and Chairman Bill Gates at the 2012 ARPA-E Energy Innovation Summit. April Saylor April Saylor Former Digital Outreach Strategist, Office of Public Affairs Last week, attendees at the 2012 ARPA-E Energy Innovation Summit heard from a variety of leaders from across the

  7. Vehicle Technologies Office Merit Review 2015: Gate Driver Optimization for WBG Applications

    Broader source: Energy.gov [DOE]

    Presentation given by Oak Ridge National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about gate driver...

  8. Vehicle Technologies Office Merit Review 2015: GATE Center for Electric Drive Transportation

    Broader source: Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  9. Multi-images deconvolution improves signal-to-noise ratio on gated stimulated emission depletion microscopy

    SciTech Connect (OSTI)

    Castello, Marco; Diaspro, Alberto; Vicidomini, Giuseppe

    2014-12-08

    Time-gated detection, namely, only collecting the fluorescence photons after a time-delay from the excitation events, reduces complexity, cost, and illumination intensity of a stimulated emission depletion (STED) microscope. In the gated continuous-wave- (CW-) STED implementation, the spatial resolution improves with increased time-delay, but the signal-to-noise ratio (SNR) reduces. Thus, in sub-optimal conditions, such as a low photon-budget regime, the SNR reduction can cancel-out the expected gain in resolution. Here, we propose a method which does not discard photons, but instead collects all the photons in different time-gates and recombines them through a multi-image deconvolution. Our results, obtained on simulated and experimental data, show that the SNR of the restored image improves relative to the gated image, thereby improving the effective resolution.

  10. Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

  11. Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Clemson University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE center of excellence...

  12. Vehicle Technologies Office Merit Review 2015: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Broader source: Energy.gov [DOE]

    Presentation given by The Ohio State University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy...

  13. Self-powered Gating and Other Improvements for Screening-engineered...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Self-powered Gating and Other Improvements for Screening-engineered Field-effect Photovoltaics Field-effect P-N Junctions for Low Cost, High Efficiency Solar Cells and Electronic ...

  14. Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Broader source: Energy.gov [DOE]

    Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

  15. Gate-tunable exchange coupling between cobalt clusters on graphene (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | DOE PAGES DOE PAGES Search Results Publisher's Accepted Manuscript: Gate-tunable exchange coupling between cobalt clusters on graphene Title: Gate-tunable exchange coupling between cobalt clusters on graphene Authors: Chen, Hua ; Niu, Qian ; Zhang, Zhenyu ; MacDonald, Allan H. Publication Date: 2013-04-10 OSTI Identifier: 1104471 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal Information: Journal Volume: 87; Journal Issue: 14; Journal ID:

  16. Voltage-Gated Hydrophobic Nanopores (Journal Article) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Voltage-Gated Hydrophobic Nanopores Citation Details In-Document Search Title: Voltage-Gated Hydrophobic Nanopores Hydrophobicity is a fundamental property that is responsible for numerous physical and biophysical aspects of molecular interactions in water. Peculiar behavior is expected for water in the vicinity of hydrophobic structures, such as nanopores. Indeed, hydrophobic nanopores can be found in two distinct states, dry and wet, even though the latter is thermodynamically unstable.

  17. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    SciTech Connect (OSTI)

    2011-07-31

    This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

  18. Theory of signal and noise in double-gated nanoscale electronic pH sensors

    SciTech Connect (OSTI)

    Go, Jonghyun; Nair, Pradeep R.; Alam, Muhammad A.

    2012-08-01

    The maximum sensitivity of classical nanowire (NW)-based pH sensors is defined by the Nernst limit of 59 mV/pH. For typical noise levels in ultra-small single-gated nanowire sensors, the signal-to-noise ratio is often not sufficient to resolve pH changes necessary for a broad range of applications. Recently, a new class of double-gated devices was demonstrated to offer apparent 'super-Nernstian' response (>59 mV/pH) by amplifying the original pH signal through innovative biasing schemes. However, the pH-sensitivity of these nanoscale devices as a function of biasing configurations, number of electrodes, and signal-to-noise ratio (SNR) remains poorly understood. Even the basic question such as 'Do double-gated sensors actually resolve smaller changes in pH compared to conventional single-gated sensors in the presence of various sources of noise?' remains unanswered. In this article, we provide a comprehensive numerical and analytical theory of signal and noise of double-gated pH sensors to conclude that, while the theoretical lower limit of pH-resolution does not improve for double-gated sensors, this new class of sensors does improve the (instrument-limited) pH resolution.

  19. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S.; Kodera, T.; Takeda, K.; Obata, T.; Tarucha, S.

    2014-05-28

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  20. Water gate array for current flow or tidal movement pneumatic harnessing system

    DOE Patents [OSTI]

    Gorlov, Alexander M.

    1991-01-01

    The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

  1. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    SciTech Connect (OSTI)

    Erickson, Paul

    2012-05-31

    This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davis’s existing GATE centers have become the campus’s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

  2. A hydrogel capsule as gate dielectric in flexible organic field-effect transistors

    SciTech Connect (OSTI)

    Dumitru, L. M.; Manoli, K.; Magliulo, M.; Torsi, L.; Ligonzo, T.; Palazzo, G.

    2015-01-01

    A jellified alginate based capsule serves as biocompatible and biodegradable electrolyte system to gate an organic field-effect transistor fabricated on a flexible substrate. Such a system allows operating thiophene based polymer transistors below 0.5 V through an electrical double layer formed across an ion-permeable polymeric electrolyte. Moreover, biological macro-molecules such as glucose-oxidase and streptavidin can enter into the gating capsules that serve also as delivery system. An enzymatic bio-reaction is shown to take place in the capsule and preliminary results on the measurement of the electronic responses promise for low-cost, low-power, flexible electronic bio-sensing applications using capsule-gated organic field-effect transistors.

  3. Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate

    DOE Patents [OSTI]

    Sappey, Andrew D.

    1998-04-14

    Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

  4. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    SciTech Connect (OSTI)

    Hou, X; Hu, YH; Grinthal, A; Khan, M; Aizenberg, J

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems(1-10). But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries(6,11-17), a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable(11,12). Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold-the pressure needed to open the pores-can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  5. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    SciTech Connect (OSTI)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,1117, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating thresholdthe pressure needed to open the porescan be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gasliquid sorting in a microfluidic flow and to separate a three-phase air wateroil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  6. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and foulingmore » is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.« less

  7. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    SciTech Connect (OSTI)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  8. Electrolyte Gate-Controlled Kondo Effect in SrTiO3 (Journal Article) | DOE

    Office of Scientific and Technical Information (OSTI)

    PAGES Electrolyte Gate-Controlled Kondo Effect in SrTiO3 « Prev Next » Title: Electrolyte Gate-Controlled Kondo Effect in SrTiO3 Authors: Lee, Menyoung ; Williams, J. R. ; Zhang, Sipei ; Frisbie, C. Daniel ; Goldhaber-Gordon, D. Publication Date: 2011-12-12 OSTI Identifier: 1098385 Type: Publisher's Accepted Manuscript Journal Name: Physical Review Letters Additional Journal Information: Journal Volume: 107; Journal Issue: 25; Journal ID: ISSN 0031-9007 Publisher: American Physical Society

  9. A spin-wave logic gate based on a width-modulated dynamic magnonic crystal

    SciTech Connect (OSTI)

    Nikitin, Andrey A.; Ustinov, Alexey B.; Semenov, Alexander A.; Kalinikos, Boris A.; Chumak, Andrii V.; Serga, Alexander A.; Vasyuchka, Vitaliy I.; Hillebrands, Burkard; Lhderanta, Erkki

    2015-03-09

    An electric current controlled spin-wave logic gate based on a width-modulated dynamic magnonic crystal is realized. The device utilizes a spin-wave waveguide fabricated from a single-crystal Yttrium Iron Garnet film and two conducting wires attached to the film surface. Application of electric currents to the wires provides a means for dynamic control of the effective geometry of waveguide and results in a suppression of the magnonic band gap. The performance of the magnonic crystal as an AND logic gate is demonstrated.

  10. Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    America's Top Energy Thought Leaders | Department of Energy Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders February 28, 2012 - 7:02am Addthis Washington D.C. - This week, the Advanced Research Projects Agency - Energy (ARPA-E) is hosting its third annual Energy Innovation Summit, which is designed to unite key players from

  11. Three dimensional time-gated tracking of non-blinking quantum dots in live

    Office of Scientific and Technical Information (OSTI)

    cells (Journal Article) | SciTech Connect Three dimensional time-gated tracking of non-blinking quantum dots in live cells Citation Details In-Document Search Title: Three dimensional time-gated tracking of non-blinking quantum dots in live cells Single particle tracking has provided a wealth of information about biophysical processes such as motor protein transport and diffusion in cell membranes. However, motion out of the plane of the microscope or blinking of the fluorescent probe used

  12. Three dimensional time-gated tracking of non-blinking quantum dots in live

    Office of Scientific and Technical Information (OSTI)

    cells (Journal Article) | SciTech Connect Three dimensional time-gated tracking of non-blinking quantum dots in live cells Citation Details In-Document Search Title: Three dimensional time-gated tracking of non-blinking quantum dots in live cells × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional

  13. ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Smith and Lee Scott | Department of Energy 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott September 9, 2011 - 9:25am Addthis New York, NY - The U.S. Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) Director, Arun Majumdar, announced yesterday that the Agency will hold its third annual ARPA-E Energy Innovation Summit from February 27 - 29, 2012

  14. Charging dynamics of a floating gate transistor with site-controlled quantum dots

    SciTech Connect (OSTI)

    Maier, P. Hartmann, F.; Emmerling, M.; Schneider, C.; Hfling, S.; Kamp, M.; Worschech, L.

    2014-08-04

    A quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs quantum dots was realized by means of molecular beam epitaxy and etching techniques. By sampling of different gate voltage sweeps for the determination of charging and discharging thresholds, it was found that discharging takes place at short time scales of ?s, whereas several seconds of waiting times within a distinct negative gate voltage range were needed to charge the quantum dots. Such quantum dot structures have thus the potential to implement logic functions comprising charge and time dependent ingredients such as counting of signals or learning rules.

  15. SU-E-J-126: Respiratory Gating Quality Assurance: A Simple Method to Achieve Millisecond Temporal Resolution

    SciTech Connect (OSTI)

    McCabe, B; Wiersma, R

    2014-06-01

    Purpose: Low temporal latency between a gating on/off signal and a linac beam on/off during respiratory gating is critical for patient safety. Although, a measurement of temporal lag is recommended by AAPM Task Group 142 for commissioning and annual quality assurance, there currently exists no published method. Here we describe a simple, inexpensive, and reliable method to precisely measure gating lag at millisecond resolutions. Methods: A Varian Real-time Position Management™ (RPM) gating simulator with rotating disk was modified with a resistive flex sensor (Spectra Symbol) attached to the gating box platform. A photon diode was placed at machine isocenter. Output signals of the flex sensor and diode were monitored with a multichannel oscilloscope (Tektronix™ DPO3014). Qualitative inspection of the gating window/beam on synchronicity were made by setting the linac to beam on/off at end-expiration, and the oscilloscope's temporal window to 100 ms to visually examine if the on/off timing was within the recommended 100-ms tolerance. Quantitative measurements were made by saving the signal traces and analyzing in MatLab™. The on and off of the beam signal were located and compared to the expected gating window (e.g. 40% to 60%). Four gating cycles were measured and compared. Results: On a Varian TrueBeam™ STx linac with RPM gating software, the average difference in synchronicity at beam on and off for four cycles was 14 ms (3 to 30 ms) and 11 ms (2 to 32 ms), respectively. For a Varian Clinac™ 21EX the average difference at beam on and off was 127 ms (122 to 133 ms) and 46 ms (42 to 49 ms), respectively. The uncertainty in the synchrony difference was estimated at ±6 ms. Conclusion: This new gating QA method is easy to implement and allows for fast qualitative inspection and quantitative measurements for commissioning and TG-142 annual QA measurements.

  16. Method and system for measuring gate valve clearances and seating force

    DOE Patents [OSTI]

    Casada, D.A.; Haynes, H.D.; Moyers, J.C.; Stewart, B.K.

    1996-01-30

    Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner. 8 figs.

  17. Method and system for measuring gate valve clearances and seating force

    DOE Patents [OSTI]

    Casada, Donald A.; Haynes, Howard D.; Moyers, John C.; Stewart, Brian K.

    1996-01-01

    Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner.

  18. Multiqubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Witzel, Wayne M.; Montaño, Inès; Muller, Richard P.; Carroll, Malcolm S.

    2015-08-19

    In this study, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interactmore » with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Putting this all together, we present a robust universal gate set for quantum computation.« less

  19. Performance of a 512 x 512 Gated CMOS Imager with a 250 ps Exposure Time

    SciTech Connect (OSTI)

    Teruya, A T; Moody, J D; Hsing, W W; Brown, C G; Griffin, M; Mead, A S

    2012-10-01

    We describe the performance of a 512x512 gated CMOS read out integrated circuit (ROIC) with a 250 ps exposure time. A low-skew, H-tree trigger distribution system is used to locally generate individual pixel gates in each 8x8 neighborhood of the ROIC. The temporal width of the gate is voltage controlled and user selectable via a precision potentiometer. The gating implementation was first validated in optical tests of a 64x64 pixel prototype ROIC developed as a proof-of-concept during the early phases of the development program. The layout of the H-Tree addresses each quadrant of the ROIC independently and admits operation of the ROIC in two modes. If common mode triggering is used, the camera provides a single 512x512 image. If independent triggers are used, the camera can provide up to four 256x256 images with a frame separation set by the trigger intervals. The ROIC design includes small (sub-pixel) optical photodiode structures to allow test and characterization of the ROIC using optical sources prior to bump bonding. Reported test results were obtained using short pulse, second harmonic Ti:Sapphire laser systems operating at ?~ 400 nm at sub-ps pulse widths.

  20. Structural and electrical characterization of CoTiN metal gates

    SciTech Connect (OSTI)

    Wongpiya, Ranida; Ouyang, Jiaomin; Chung, Chia-Jung; Duong, Duc T.; Clemens, Bruce; Deal, Michael; Nishi, Yoshio

    2015-02-21

    As the gate size continues to decrease in nanoscale transistors, having metal gates with amorphous or near amorphous structures can potentially reduce grain-induced work function variation. Furthermore, amorphous materials are known to have superior diffusion barrier properties, which can help prevent work function change due to the diffusion of metals in contact with the gate. In this work we show that with the addition of cobalt, thin films of polycrystalline TiN become more amorphous with a smaller grain size. Co{sub x}(TiN){sub 1-x} films, where x?=?6080%, appear to consist of nanocrystals embedded in an amorphous matrix, and are thermally stable with no significant crystallization up to an annealing temperature of at least 600?C. Reducing the nitrogen gas flow ratio during sputter deposition from 9% to 2.5% further decreases the films' crystallinity, which is apparent by more sparse and even smaller nanocrystals. In addition to being partially amorphous, these CoTiN films also exhibit good thermal stability, low resistivity, low roughness, and have the potential for atomic layer deposition compatibility. Even though these materials are not completely amorphous, their small crystal size and amorphous matrix can potentially reduce work function variation and improve their diffusion barrier property. These properties make CoTiN a good candidate as a gate material for future nanoelectronic devices and technology.

  1. Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Witzel, Wayne; Montano, Ines; Muller, Richard P.; Carroll, Malcolm S.

    2015-08-19

    In this paper, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interactmore » with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. Furthermore, this system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Thus, putting this all together, we present a robust universal gate set for quantum computation.« less

  2. SU-E-CAMPUS-J-01: TG142 Complied Comprehensive Commissioning and Quality Assurance Procedure for Respiratory Gating

    SciTech Connect (OSTI)

    Woods, K; Rong, Y; Weldon, M; Gupta, N

    2014-06-15

    Purpose: To develop and establish a comprehensive gating commissioning and quality assurance procedure in compliance with TG142. Methods: Quality assurance tests on three Varian LINACs included beam output and energy constancy, calibration of surrogate, as well as phase and amplitude gating temporal accuracy. A diode array (MapCHECK 2) and film (Gafchromic EBT2) were used to measure the temporal accuracy of phase and amplitude gating windows. A motion simulation device (MotionSim) was used to simulate respiratory motion for both detectors. An end-to-end test was also performed on all three machines. The overall accuracy and uncertainty was analyzed and compared. Results: The end-to-end test using an anthropomorphic lung phantom (CIRS) results in an OSL dose difference reading within 5% (within measurement uncertainty) for both phase and amplitude gated treatment. Film results showed < 1% agreement between profiles for gated delivery and predicted dose. The diode array demonstrated an 80% passing rate for gamma criteria of 2%/0.2 mm, which results in a 111 msec temporal accuracy. However, the diode array is limited by its spatial resolution of measurements, due to its 7.07 mm diode spacing. Film provided higher measuring resolution, thus demonstrated a temporal accuracy of <100 msec. Conclusion: Results showed consistent respiratory gating stability and accuracy. MapCHECK 2 may not be sufficient for the temporal accuracy test in the respiratory gating treatment in order to meet the corresponding tolerance in TG142. One would need to decrease respiratory motion speed from the surrogate or tighten the gating window in order to be within tolerance of 100 msec temporal accuracy per TG-142. The end-to-end test offers insight to the overall accuracy and uncertainties with a gated protocol. Compared to static delivery, respiratory motion increases the overall uncertainty of treatment delivery from 3% to 5% dose difference.

  3. SU-E-J-185: Gated CBCT Imaging for Positioning Moving Lung Tumor in Lung SBRT Treatment

    SciTech Connect (OSTI)

    Li, X; Li, T; Zhang, Y; Burton, S; Karlovits, B; Clump, D; Heron, D; Huq, M

    2014-06-01

    Purpose: Lung stereo-tactic body radiotherapy(SBRT) treatment requires high accuracy of lung tumor positioning during treatment, which is usually accomplished by free breathing Cone-Beam computerized tomography (CBCT) scan. However, respiratory motion induced image artifacts in free breathing CBCT may degrade such positioning accuracy. The purpose of this study is to investigate the feasibility of gated CBCT imaging for lung SBRT treatment. Methods: Six Lung SBRT patients were selected for this study. The respiratory motion of the tumors ranged from 1.2cm to 3.5cm, and the gating windows for all patients were set between 35% and 65% of the respiratory phases. Each Lung SBRT patient underwent free-breathing CBCT scan using half-fan scan technique. The acquired projection images were transferred out for off-line analyses. An In-house semi-automatic algorithm was developed to trace the diaphragm movement from those projection images to acquire a patient's specific respiratory motion curve, which was used to correlate respiratory phases with each projection image. Afterwards, a filtered back-projection algorithm was utilized to reconstruct the gated CBCT images based on the projection images only within the gating window. Results: Target volumes determined by free breathing CBCT images were 71.9%72% bigger than the volume shown in gated CBCT image. On the contrary, the target volume differences between gated CBCT and planning CT images at exhale stage were 5.8%2.4%. The center to center distance of the targets shown in free breathing CBCT and gated CBCT images were 9.28.1mm. For one particular case, the superior boundary of the target was shifted 15mm between free breathing CBCT and gated CBCT. Conclusion: Gated CBCT imaging provides better representation of the moving lung tumor with less motion artifacts, and has the potential to improve the positioning accuracy in lung SBRT treatment.

  4. As you prepare for your upcoming beam time, please be aware that construction is planned to update SLAC Gate 17 with RFID proximity card access hardware and to change the stairs next to the Security hut to an ADA compliant ramp. Please forward this to your proposal collaborators (and ensure that all users have registered and completed training before they arrive). This construction is scheduled to begin Tuesday 5/28 and be completed by 6/28. During this construction, access to the LCLS and SSRL buildings and experimental facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 5/28-6/28 0600-1530 (6 am-3:30 pm) Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. 1530-1800 (3:30-6:00 pm) Assumes construction will have stopped for the day; both traffic lanes will be open for vehicles. 1800-0600 (6 pm-6 am) As now, Gate 17 will be closed or barricaded overnight. PEDESTRIANS ONLY THROUGH GATE 16 5/28-6/28 The pedestrian turnstile at Gate 16A will not change. The turnstile is available for pedestrian use 24/7 as long as the individual has a valid SLAC ID badge (and there is a guard at Gate 30 to 'buzz' them through). 0700-1600 (6 am-4 pm) Pedestrians who would normally walk through Gate 17 will instead follow the detour to Gate 16 swing gate which will be unlocked and staffed by Security. A valid SLAC ID badge is needed to enter; new users without IDs will be allowed to proceed for check-in and badging after confirmation with the User Research Administration Office (see detour map attached). FYI - After the construction is completed and proximity card readers are fully functional, users and staff will enter Gates 17 and 30 using an activated RFID proximity card. More details to follow.

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building 137 Bldg. 270 CONSTRUCTION IMPACTS PEDESTRIAN AND VEHICLE ACCESS THROUGH SLAC SECURITY GATE 17 ~ May 28-June 28, 2013 The stairs next to the Gate 17 Guard House will be replaced with an ADA compliant ramp; the turnstile and fence at SLAC Gate 17 will be updated with RFID proximity card access hardware. During this construction, access beyond the fence, including the SSRL and LCLS buildings and user facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 Security will

  5. Air-gap gating of MgZnO/ZnO heterostructures

    SciTech Connect (OSTI)

    Tambo, T.; Falson, J. Kozuka, Y.; Maryenko, D.; Tsukazaki, A.; Kawasaki, M.

    2014-08-28

    The adaptation of air-gap dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5??m. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3?mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.

  6. Gate-tunable gigantic lattice deformation in VO{sub 2}

    SciTech Connect (OSTI)

    Okuyama, D. E-mail: nakano@imr.tohoku.ac.jp Hatano, T.; Nakano, M. E-mail: nakano@imr.tohoku.ac.jp; Takeshita, S.; Ohsumi, H.; Tardif, S.; Shibuya, K.; Yumoto, H.; Koyama, T.; Ohashi, H.; Takata, M.; Kawasaki, M.; Tokura, Y.; Iwasa, Y. E-mail: nakano@imr.tohoku.ac.jp; Arima, T.

    2014-01-13

    We examined the impact of electric field on crystal lattice of vanadium dioxide (VO{sub 2}) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO{sub 2} decreases through the thermally induced insulator-to-metal phase transition, the gate-induced metallization was found to result in a significant increase of the c-axis length by almost 1% from that of the thermally stabilized insulating state. We also found that this gate-induced gigantic lattice deformation occurs even at the thermally stabilized metallic state, enabling dynamic control of c-axis lattice parameter by more than 1% at room temperature.

  7. Memory effect in silicon time-gated single-photon avalanche diodes

    SciTech Connect (OSTI)

    Dalla Mora, A.; Contini, D. Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  8. 2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

    ScienceCinema (OSTI)

    Chu, Steven (U.S. Department of Energy Secretary); Gates, Bill (Microsoft, Chairman); Podesta, John (Center for American Progress, Chair and Counselor)

    2012-03-21

    The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

  9. Attosecond x-ray source generation from two-color polarized gating plasmonic field enhancement

    SciTech Connect (OSTI)

    Feng, Liqiang; State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 ; Yuan, Minghu; Chu, Tianshu; Institute for Computational Sciences and Engineering, Laboratory of New Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071

    2013-12-15

    The plasmonic field enhancement from the vicinity of metallic nanostructures as well as the polarization gating technique has been utilized to the generation of the high order harmonic and the single attosecond x-ray source. Through numerical solution of the time-dependent Schrödinger equation, for moderate the inhomogeneity and the polarized angle of the two fields, we find that not only the harmonic plateau has been extended and enhanced but also the single short quantum path has been selected to contribute to the harmonic. As a result, a series of 50 as pulses around the extreme ultraviolet and the x-ray regions have been obtained. Furthermore, by investigating the other parameters effects on the harmonic emission, we find that this two-color polarized gating plasmonic field enhancement scheme can also be achieved by the multi-cycle pulses, which is much better for experimental realization.

  10. Formation of low resistivity titanium silicide gates in semiconductor integrated circuits

    DOE Patents [OSTI]

    Ishida, Emi

    1999-08-10

    A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.

  11. A review of the use and potential of the GATE Monte Carlo simulation code for radiation therapy and dosimetry applications

    SciTech Connect (OSTI)

    Sarrut, David; Universit Lyon 1; Centre Lon Brard ; Bardis, Manuel; Marcatili, Sara; Mauxion, Thibault; Boussion, Nicolas; Freud, Nicolas; Ltang, Jean-Michel; Jan, Sbastien; Maigne, Lydia; Perrot, Yann; Pietrzyk, Uwe; Robert, Charlotte; and others

    2014-06-15

    In this paper, the authors' review the applicability of the open-source GATE Monte Carlo simulation platform based on the GEANT4 toolkit for radiation therapy and dosimetry applications. The many applications of GATE for state-of-the-art radiotherapy simulations are described including external beam radiotherapy, brachytherapy, intraoperative radiotherapy, hadrontherapy, molecular radiotherapy, and in vivo dose monitoring. Investigations that have been performed using GEANT4 only are also mentioned to illustrate the potential of GATE. The very practical feature of GATE making it easy to model both a treatment and an imaging acquisition within the same frameworkis emphasized. The computational times associated with several applications are provided to illustrate the practical feasibility of the simulations using current computing facilities.

  12. Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan- Dearborn

    Broader source: Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  13. Magnetic roller gas gate employing transonic sweep gas flow to isolate regions of differing gaseous composition or pressure

    DOE Patents [OSTI]

    Doehler, Joachim

    1994-12-20

    Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure. The gas gate includes a narrow, elongated passageway through which substrate material is adapted to move between said regions and inlet means for introducing a flow of non-contaminating sweep gas into a central portion of said passageway. The gas gate is characterized in that the height of the passageway and the flow rate of the sweep gas therethrough provides for transonic flow of the sweep gas between the inlet means and at least one of the two interconnected regions, thereby effectively isolating one region, characterized by one composition and pressure, from another region, having a differing composition and/or pressure, by decreasing the mean-free-path length between collisions of diffusing species within the transonic flow region. The gas gate preferably includes a manifold at the juncture point where the gas inlet means and the passageway interconnect.

  14. Crystal structure of a two-subunit TrkA octameric gating ring assembly

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Deller, Marc C.; Johnson, Hope A.; Miller, Mitchell D.; Spraggon, Glen; Elsliger, Marc -André; Wilson, Ian A.; Lesley, Scott A.; Ye, Sheng

    2015-03-31

    The TM1088 locus of T. maritima codes for two proteins designated TM1088A and TM1088B, which combine to form the cytosolic portion of a putative Trk K⁺ transporter. We report the crystal structure of this assembly to a resolution of 3.45 Å. The high resolution crystal structures of the components of the assembly, TM1088A and TM1088B, were also determined independently to 1.50 Å and 1.55 Å, respectively. The TM1088 proteins are structurally homologous to each other and to other K⁺ transporter proteins, such as TrkA. These proteins form a cytosolic gating ring assembly that controls the flow of K⁺ ions acrossmore » the membrane. TM1088 represents the first structure of a two-subunit Trk assembly. Despite the atypical genetics and chain organization of the TM1088 assembly, it shares significant structural homology and an overall quaternary organization with other single-subunit K⁺ gating ring assemblies. This structure provides the first structural insights into what may be an evolutionary ancestor of more modern single-subunit K⁺ gating ring assemblies.« less

  15. SU-E-J-59: Effective Adaptive DMLC Gated Radiotherapy with OAR Sparing

    SciTech Connect (OSTI)

    Chen, Y; Wu, H; Zhou, Z; Sandison, MinGeorge

    2014-06-01

    Purpose: Patient respiratory motion degrades the effectiveness of cancer radiation treatment. Advanced respiratory gating delivers radiation dose accurately yet with elongated treatment time. The goal of this research is to propose a novel adaptive dMLC dynamic gating with high delivery efficiency and precision. Methods: The dose delivery of dMLC is aided by simultaneous tracking of tumor and organ at risk (OAR). The leaf opening/closing will follow the motion trajectory of the tumor while sparing the OAR. The treatment beam turns on only when there is no overlapping between OAR and tumor in BEV. A variety of evaluation metrics were considered and calculated, including duty cycle, beam toggling rate, and direct irradiation avoidance to OAR, under various combinations of different tumor margins and the distance between the centers of the tumor and OAR in BEV (expressed as dx). Results: Retrospective simulation was performed to investigate the feasibility and superiority of this technique using four groups of synchronized tumor and OAR motion data. The simulation results indicate that the tumor and OAR motion patterns and their relative positions are the dominant influential factors. The duty cycle can be greater than 96.71% yet can be as low as 6.69% depending different motion groups. This proposed technique provides good OAR protection, especially for such cases with low duty cycle for which as high as 77.71% maximal direct irradiation to OAR can be spared. Increasing dx improves the duty cycle (treatment efficiency) and provides better OAR volume sparing, whereas, that of the tumor margins has the opposite influence. Conclusion: This real-time adaptive dMLC gated radiation treatment with synchronous tumor and OAR tracking has inherent accurate dose delivery to tumor with reduced treatment time. In addition, the OAR protection capability make it an outstanding potential treatment strategy for mobile tumors.

  16. Cloning and first functional characterization of a plant cyclic nucleotide-gated cation channel

    SciTech Connect (OSTI)

    Leng, Q.; Mercier, R.W.; Yao, W.; Berkowitz, G.A.

    1999-11-01

    Cyclic nucleotide-gated (cng) non-selective cation channels have been cloned from a number of animal systems. These channels are characterized by direct gating upon cAMO or cGMO binding to the intracellular portion of the channel protein, which leads to an increase in channel conductance. Animal cng channels are involved in signal transduction systems; they translate stimulus-induced changes in cytosolic cyclic nucleotide into altered cell membrane potential and/or cation flux as part of a signal cascade pathway. Putative plant homologs of animal cng channels have been identified. However, functional characterization (i.e., demonstration of cyclic-nucleotide-dependent ion currents) of a plant cng channel has not yet been accomplished. The authors report the cloning and first functional characterization of a plant member of this family of ion channels. The Arabidopsis cDNA AtCNGC2 encodes a polypeptide with deduced homology to the {alpha}-subunit of animal channels, and facilitates cyclic nucleotide-dependent cation currents upon expression in a number of heterologous systems. AtCNGC2 expression in a yeast mutant lacking a low-affinity K{sup +} uptake system complements growth inhibition only when lipophilic nucleotides are present in the culture medium. Voltage clamp analysis indicates that Xenopus lawvis oocytes injected with AtCNGC2 cRNA demonstrate cyclic-nucleotide-dependent, inward-rectifying K{sup +} currents. Human embryonic kidney cells (HEK293) transfected with AtCNGC2 cDNA demonstrate increased permeability to Ca{sup 2+} only in the presence of lipophilic cyclic nucleotides. The evidence presented here supports the functional classification of AtCNGC2 as a cyclic-nucleotide-gated cation channel, and presents the first direct evidence identifying a plant member of this ion channel family.

  17. Three dimensional time-gated tracking of non-blinking quantum dots in live cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    DeVore, Matthew S.; Werner, James H.; Goodwin, Peter M.; Keller, Aaron M.; Hollingsworth, Jennifer A.; Wilson, Bridget S.; Cleyrat, Cedric; Lidke, Diane S.; Ghosh, Yagnaseni; Stewart, Michael H.; et al

    2015-03-12

    Single particle tracking has provided a wealth of information about biophysical processes such as motor protein transport and diffusion in cell membranes. However, motion out of the plane of the microscope or blinking of the fluorescent probe used as a label generally limits observation times to several seconds. Here, we overcome these limitations by using novel non-blinking quantum dots as probes and employing a custom 3D tracking microscope to actively follow motion in three dimensions (3D) in live cells. As a result, signal-to-noise is improved in the cellular milieu through the use of pulsed excitation and time-gated detection.

  18. Note: The design of thin gap chamber simulation signal source based on field programmable gate array

    SciTech Connect (OSTI)

    Hu, Kun; Wang, Xu; Li, Feng; Jin, Ge; Lu, Houbing; Liang, Futian

    2015-01-15

    The Thin Gap Chamber (TGC) is an important part of ATLAS detector and LHC accelerator. Targeting the feature of the output signal of TGC detector, we have designed a simulation signal source. The core of the design is based on field programmable gate array, randomly outputting 256-channel simulation signals. The signal is generated by true random number generator. The source of randomness originates from the timing jitter in ring oscillators. The experimental results show that the random number is uniform in histogram, and the whole system has high reliability.

  19. Gate-tunable valley-spin filtering in silicene with magnetic barrier

    SciTech Connect (OSTI)

    Wu, X. Q.; Meng, H.

    2015-05-28

    We theoretically study the valley- and spin-resolved scattering through magnetic barrier in a one layer thick silicene, using the mode-matching method for the Dirac equation. We show that the spin-valley filtering effect can be achieved and can also be tuned completely through both a top and bottom gate. Moreover, when reversing the sign of the staggered potential, we find the direction of the valley polarization is switched while the direction of spin polarization is unchanged. These results can provide some meaningful information to design valley valve residing on silicene.

  20. Field programmable gate array-assigned complex-valued computation and its limits

    SciTech Connect (OSTI)

    Bernard-Schwarz, Maria, E-mail: maria.bernardschwarz@ni.com [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria); Zwick, Wolfgang; Klier, Jochen [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Wenzel, Lothar [National Instruments, 11500 N MOPac Expy, Austin, Texas 78759 (United States); Grschl, Martin [Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria)

    2014-09-15

    We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.

  1. Field Emission Cathode Gating for RF Electron Guns (IN-04-039) - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation Portal Industrial Technologies Industrial Technologies Find More Like This Return to Search Field Emission Cathode Gating for RF Electron Guns (IN-04-039) Argonne National Laboratory Contact ANL About This Technology <p> Field emission (FE) gun&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;</p> Field emission (FE) gun <p> <span style="line-height: 115%; font-family:

  2. Gate Access

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to the laboratory. Visitors from outside the U.S. should be prepared to show a valid passport. See Access to the ALS for additional information about visitor procedures at the...

  3. GATING CIRCUITS

    DOE Patents [OSTI]

    Merrill, L.C.

    1958-10-14

    Control circuits for vacuum tubes are described, and a binary counter having an improved trigger circuit is reported. The salient feature of the binary counter is the application of the input signal to the cathode of each of two vacuum tubes through separate capacitors and the connection of each cathode to ground through separate diodes. The control of the binary counter is achieved in this manner without special pulse shaping of the input signal. A further advantage of the circuit is the simplicity and minimum nuruber of components required, making its use particularly desirable in computer machines.

  4. Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

    SciTech Connect (OSTI)

    Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin E-mail: chilf@suda.edu.cn Chi, Li-Feng E-mail: chilf@suda.edu.cn Wang, Sui-Dong E-mail: chilf@suda.edu.cn

    2015-03-23

    Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

  5. Extremely scaled high-k/In?.??Ga?.??As gate stacks with low leakage and low interface trap densities

    SciTech Connect (OSTI)

    Chobpattana, Varistha; Mikheev, Evgeny; Zhang, Jack Y.; Mates, Thomas E.; Stemmer, Susanne

    2014-09-28

    Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma and tetrakis(dimethylamino)titanium, allows for HfO? and ZrO? gate stacks with extremely high accumulation capacitance densities of more than 5 ?F/cm? at 1 MHz, low leakage current, low frequency dispersion, and low midgap interface trap densities (10cm?eV?range). Using x-ray photoelectron spectroscopy, we show that the interface contains TiO? and small quantities of In?O?, but no detectable Ga- or As-oxides, or As-As bonding. The results allow for insights into the microscopic mechanisms that control leakage and frequency dispersion in high-k/III-V gate stacks.

  6. Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

    SciTech Connect (OSTI)

    Goswami, Arunesh; Trew, Robert J.; Bilbro, Griff L.

    2014-10-28

    A physics based model of the gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors is demonstrated. The model is based on the space charge limited current flow dominated by the effects of deep traps in the InAlN surface layer. The model predicts accurately the gate-leakage measurement data of the N-polar InAlN/GaN device with InAlN cap layer. In the pinch-off state, the gate leakage current conduction through the surface of the device in the drain access region dominates the current flow through the two dimensional electron gas channel. One deep trap level and two levels of shallow traps are extracted by fitting the model results with measurement data.

  7. Top-gate organic depletion and inversion transistors with doped channel and injection contact

    SciTech Connect (OSTI)

    Liu, Xuhai; Kasemann, Daniel Leo, Karl

    2015-03-09

    Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

  8. Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

    SciTech Connect (OSTI)

    Esro, M.; Adamopoulos, G.; Mazzocco, R.; Kolosov, O.; Krier, A.; Vourlias, G.; Milne, W. I.

    2015-05-18

    We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (La{sub x}Al{sub 1−x}O{sub y}) grown by spray pyrolysis in ambient atmosphere at 440 °C. The structural, electronic, optical, morphological, and electrical properties of the La{sub x}Al{sub 1−x}O{sub y} films and devices as a function of the lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As-deposited LaAlO{sub y} dielectrics exhibit a wide band gap (∼6.18 eV), high dielectric constant (k ∼ 16), low roughness (∼1.9 nm), and very low leakage currents (<3 nA/cm{sup 2}). TFTs employing solution processed LaAlO{sub y} gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (∼10 V), high on/off current modulation ratio of >10{sup 6}, subthreshold swing of ∼650 mV dec{sup −1}, and electron mobility of ∼12 cm{sup 2} V{sup −1} s{sup −1}.

  9. Kinetic gating mechanism of DNA damage recognition by Rad4/XPC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chen, Xuejing; Velmurugu, Yogambigai; Zheng, Guanqun; Park, Beomseok; Shim, Yoonjung; Kim, Youngchang; Liu, Lili; Van Houten, Bennett; He, Chuan; Ansari, Anjum; et al

    2015-01-06

    The xeroderma pigmentosum C (XPC) complex initiates nucleotide excision repair by recognizing DNA lesions before recruiting downstream factors. How XPC detects structurally diverse lesions embedded within normal DNA is unknown. Here we present a crystal structure that captures the yeast XPC orthologue (Rad4) on a single register of undamaged DNA. The structure shows that a disulphide-tethered Rad4 flips out normal nucleotides and adopts a conformations similar to that seen with damaged DNA. Contrary to many DNA repair enzymes that can directly reject non-target sites as structural misfits, our results suggest that Rad4/XPC uses a kinetic gating mechanism whereby lesion selectivitymore » arises from the kinetic competition between DNA opening and the residence time of Rad4/XPC per site. This mechanism is further supported by measurements of Rad4-induced lesion-opening times using temperature-jump pertubation spectroscopy. Kinetic gating may be a general mechanism used by site-specific DNA-binding proteins to minimize time-consuming interrogations of non-target sites.« less

  10. As you prepare for your upcoming beam time, please be aware that construction is planned to update SLAC Gate 17 with RFID proximity card access hardware and to change the stairs next to the Security hut to an ADA compliant ramp. Please forward this to your proposal collaborators (and ensure that all users have registered and completed training before they arrive). This construction is scheduled to begin Tuesday 5/28 and be completed by 6/28. During this construction, access to the LCLS and SSRL buildings and experimental facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 5/28-6/28 0600-1530 (6 am-3:30 pm) Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. 1530-1800 (3:30-6:00 pm) Assumes construction will have stopped for the day; both traffic lanes will be open for vehicles. 1800-0600 (6 pm-6 am) As now, Gate 17 will be closed or barricaded overnight. PEDESTRIANS ONLY THROUGH GATE 16 5/28-6/28 The pedestrian turnstile at Gate 16A will not change. The turnstile is available for pedestrian use 24/7 as long as the individual has a valid SLAC ID badge (and there is a guard at Gate 30 to 'buzz' them through). 0700-1600 (6 am-4 pm) Pedestrians who would normally walk through Gate 17 will instead follow the detour to Gate 16 swing gate which will be unlocked and staffed by Security. A valid SLAC ID badge is needed to enter; new users without IDs will be allowed to proceed for check-in and badging after confirmation with the User Research Administration Office (see detour map attached). FYI - After the construction is completed and proximity card readers are fully functional, users and staff will enter Gates 17 and 30 using an activated RFID proximity card. More details to follow.

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Automated Proximity Access at Gate 17 and Sector 30 New SLAC ID badges with embedded RFID are used to activate these gates and for off-hours access at the main entrance off Sand Hill Road as well as Alpine Road (gates will be accessible 24/7) . New user badges include this proximity gate activation feature, but older photo IDs need to be updated. Users are advised to register, complete training and contact the User Research Administration (URA) office before arrival for beam time to help

  11. Update and Expansion of the Center of Automotive Technology Excellence Under the Graduate Automotive Technology Education (GATE) Program at the University of Tennessee, Knoxville

    SciTech Connect (OSTI)

    Irick, David

    2012-08-30

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its seventh year of operation under this agreement, its thirteenth year in total. During this period the Center has involved eleven GATE Fellows and three GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the centers focus area: Advanced Hybrid Propulsion and Control Systems. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $2,000,000.

  12. Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

    SciTech Connect (OSTI)

    Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

    2014-10-21

    Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al?O? gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?C.

  13. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more » by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  14. Graduate Automotive Technology Education (GATE) Program: Center of Automotive Technology Excellence in Advanced Hybrid Vehicle Technology at West Virginia University

    SciTech Connect (OSTI)

    Nigle N. Clark

    2006-12-31

    This report summarizes the technical and educational achievements of the Graduate Automotive Technology Education (GATE) Center at West Virginia University (WVU), which was created to emphasize Advanced Hybrid Vehicle Technology. The Center has supported the graduate studies of 17 students in the Department of Mechanical and Aerospace Engineering and the Lane Department of Computer Science and Electrical Engineering. These students have addressed topics such as hybrid modeling, construction of a hybrid sport utility vehicle (in conjunction with the FutureTruck program), a MEMS-based sensor, on-board data acquisition for hybrid design optimization, linear engine design and engine emissions. Courses have been developed in Hybrid Vehicle Design, Mobile Source Powerplants, Advanced Vehicle Propulsion, Power Electronics for Automotive Applications and Sensors for Automotive Applications, and have been responsible for 396 hours of graduate student coursework. The GATE program also enhanced the WVU participation in the U.S. Department of Energy Student Design Competitions, in particular FutureTruck and Challenge X. The GATE support for hybrid vehicle technology enhanced understanding of hybrid vehicle design and testing at WVU and encouraged the development of a research agenda in heavy-duty hybrid vehicles. As a result, WVU has now completed three programs in hybrid transit bus emissions characterization, and WVU faculty are leading the Transportation Research Board effort to define life cycle costs for hybrid transit buses. Research and enrollment records show that approximately 100 graduate students have benefited substantially from the hybrid vehicle GATE program at WVU.

  15. A New Gated X-Ray Detector for the Orion Laser Facility

    SciTech Connect (OSTI)

    Clark, David D.; Aragonez, Robert J.; Archuleta, Thomas N.; Fatherley, Valerie E.; Hsu, Albert H.; Jorgenson, H. J.; Mares, Danielle; Oertel, John A.; Oades, Kevin; Kemshall, Paul; Thomas, Philip; Young, Trevor; Pederson, Neal

    2012-08-08

    Gated X-Ray Detectors (GXD) are considered the work-horse target diagnostic of the laser based inertial confinement fusion (ICF) program. Recently, Los Alamos National Laboratory (LANL) has constructed three new GXDs for the Orion laser facility at the Atomic Weapons Establishment (AWE) in the United Kingdom. What sets these three new instruments apart from the what has previously been constructed for the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) is: improvements in detector head microwave transmission lines, solid state embedded hard drive and updated control software, and lighter air box design and other incremental mechanical improvements. In this paper we will present the latest GXD design enhancements and sample calibration data taken on the Trident laser facility at Los Alamos National Laboratory using the newly constructed instruments.

  16. A digital optical phase-locked loop for diode lasers based on field programmable gate array

    SciTech Connect (OSTI)

    Xu Zhouxiang; Zhang Xian; Huang Kaikai; Lu Xuanhui

    2012-09-15

    We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad{sup 2} and transition time of 100 {mu}s under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

  17. Short range, ultra-wideband radar with high resolution swept range gate

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1998-05-26

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control.

  18. Short range, ultra-wideband radar with high resolution swept range gate

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-05-26

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. 14 figs.

  19. Ionizing radiation induced leakage current on ultra-thin gate oxides

    SciTech Connect (OSTI)

    Scarpa, A.; Paccagnella, A.; Montera, F.; Ghibaudo, G.; Pananakakis, G.; Fuochi, P.G.

    1997-12-01

    MOS capacitors with a 4.4 nm thick gate oxide have been exposed to {gamma} radiation from a Co{sup 60} source. As a result, the authors have measured a stable leakage current at fields lower than those required for Fowler-Nordheim tunneling. This Radiation Induced Leakage Current (RILC) is similar to the usual Stress Induced Leakage Currents (SILC) observed after electrical stresses of MOS devices. They have verified that these two currents share the same dependence on the oxide field, and the RILC contribution can be normalized to an equivalent injected charge for Constant Current Stresses. They have also considered the dependence of the RILC from the cumulative radiation dose, and from the applied bias during irradiation, suggesting a correlation between RILC and the distribution of trapped holes and neutral levels in the oxide layer.

  20. Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers

    SciTech Connect (OSTI)

    Gong, Zhirui; Liu, G. B.; Yu, Hongyi; Xiao, Di; Cui, Xiaodong; Xu, Xiaodong; Yao, Wang

    2013-01-01

    In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here we show that transition metal dichalcogenide bilayers offer an unprecedented platform to realize a strong coupling between the spin, valley and layer pseudospin of holes. Such coupling gives rise to the spin Hall effect and spin-dependent selection rule for optical transitions in inversion symmetric bilayer and leads to a variety of magnetoelectric effects permitting quantum manipulation of these electronic degrees of freedom. Oscillating electric and magnetic fields can both drive the hole spin resonance where the two fields have valley-dependent interference, making an interplay between the spin and valley as information carriers possible for potential valley-spintronic applications. We show how to realize quantum gates on the spin qubit controlled by the valley bit.

  1. Ripple gate drive circuit for fast operation of series connected IGBTs

    DOE Patents [OSTI]

    Rockot, Joseph H.; Murray, Thomas W.; Bass, Kevin C.

    2005-09-20

    A ripple gate drive circuit includes a plurality of transistors having their power terminals connected in series across an electrical potential. A plurality of control circuits, each associated with one of the transistors, is provided. Each control circuit is responsive to a control signal and an optical signal received from at least one other control circuit for controlling the conduction of electrical current through the power terminals of the associated transistor. The control circuits are responsive to a first state of the control circuit for causing each transistor in series to turn on sequentially and responsive to a second state of the control signal for causing each transistor in series to turn off sequentially.

  2. Evaluation of delivered monitor unit accuracy of gated step-and-shoot IMRT using a two-dimensional detector array

    SciTech Connect (OSTI)

    Cheong, Kwang-Ho; Kang, Sei-Kwon; Lee, MeYeon; Kim, Su SSan; Park, SoAh; Hwang, Tae-Jin; Kim, Kyoung Ju; Oh, Do Hoon; Bae, Hoonsik; Suh, Tae-Suk

    2010-03-15

    Purpose: To overcome the problem of organ motion in intensity-modulated radiation therapy (IMRT), gated IMRT is often used for the treatment of lung cancer. In this study, the authors investigated the accuracy of the delivered monitor units (MUs) from each segment during gated IMRT using a two-dimensional detector array for user-specific verification purpose. Methods: The authors planned a 6 MV photon, seven-port step-and-shoot lung IMRT delivery. The respiration signals for gated IMRT delivery were obtained from the one-dimensional moving phantom using the real-time position management (RPM) system (Varian Medical Systems, Palo Alto, CA). The beams were delivered using a Clinac iX (Varian Medical Systems, Palo Alto, CA) with the Millennium 120 MLC. The MatriXX (IBA Dosimetry GmbH, Germany) was validated through consistency and reproducibility tests as well as comparison with measurements from a Farmer-type ion chamber. The authors delivered beams with varying dose rates and duty cycles and analyzed the MatriXX data to evaluate MU delivery accuracy. Results: There was quite good agreement between the planned segment MUs and the MUs computed from the MatriXX within {+-}2% error. The beam-on times computed from the MatriXX data were almost identical for all cases, and they matched well with the RPM beam-on and beam-off signals. A slight difference was observed between them, but it was less than 40 ms. The gated IMRT delivery demonstrated an MU delivery accuracy that was equivalent to ungated IMRT, and the delivered MUs with a gating signal agreed with the planned MUs within {+-}0.5 MU regardless of dose rate and duty cycle. Conclusions: The authors can conclude that gated IMRT is able to deliver an accurate dose to a patient during a procedure. The authors believe that the methodology and results can be transferred to other vendors' devices, particularly those that do not provide MLC log data for a verification purpose.

  3. Quantum Mechanical Calculations of Charge Effects on gating the KcsA channel

    SciTech Connect (OSTI)

    Kariev, Alisher M.; Znamenskiy, Vasiliy S.; Green, Michael E.

    2007-02-06

    The research described in this product was performed in part in the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory. A series of ab initio (density functional) calculations were carried out on side chains of a set of amino acids, plus water, from the (intracellular) gating region of the KcsA K+ channel. Their atomic coordinates, except hydrogen, are known from X-ray structures [D.A. Doyle, J.M. Cabral, R.A. Pfuetzner, A. Kuo, J.M. Gulbis, S.L. Cohen, B.T. Chait, R. MacKinnon, The structure of the potassium channel: molecular basis of K+ conduction and selectivity, Science 280 (1998) 6977; R. MacKinnon, S.L. Cohen, A. Kuo, A. Lee, B.T. Chait, Structural conservation in prokaryotic and eukaryotic potassium channels, Science 280 (1998) 106109; Y. Jiang, A. Lee, J. Chen, M. Cadene, B.T. Chait, R. MacKinnon, The open pore conformation of potassium channels. Nature 417 (2001) 523526], as are the coordinates of some water oxygen atoms. The 1k4c structure is used for the starting coordinates. Quantum mechanical optimization, in spite of the starting configuration, places the atoms in positions much closer to the 1j95, more tightly closed, configuration. This state shows four water molecules forming a basket under the Q119 side chains, blocking the channel. When a hydrated K+ approaches this basket, the optimized system shows a strong set of hydrogen bonds with the K+ at defined positions, preventing further approach of the K+ to the basket. This optimized structure with hydrated K+ added shows an ice-like 12 molecule nanocrystal of water. If the water molecules exchange, unless they do it as a group, the channel will remain blocked. The basket itself appears to be very stable, although it is possible that the K+ with its hydrating water molecules may be more mobile, capable of withdrawing from the gate. It is also not surprising that water essentially freezes, or forms a kind of glue, in a nanometer space; this agrees with experimental results on a rather different, but similarly sized (nm dimensions) system [K.B. Jinesh, J.W.M. Frenken, Capillary condensation in atomic scale friction: how water acts like a glue, Phys. Rev. Lett. 96 (2006) 166103/14].

  4. Floating-Point Units and Algorithms for field-programmable gate arrays

    Energy Science and Technology Software Center (OSTI)

    2005-11-01

    The software that we are attempting to copyright is a package of floating-point unit descriptions and example algorithm implementations using those units for use in FPGAs. The floating point units are best-in-class implementations of add, multiply, divide, and square root floating-point operations. The algorithm implementations are sample (not highly flexible) implementations of FFT, matrix multiply, matrix vector multiply, and dot product. Together, one could think of the collection as an implementation of parts of themore » BLAS library or something similar to the FFTW packages (without the flexibility) for FPGAs. Results from this work has been published multiple times and we are working on a publication to discuss the techniques we use to implement the floating-point units, For some more background, FPGAS are programmable hardware. "Programs" for this hardware are typically created using a hardware description language (examples include Verilog, VHDL, and JHDL). Our floating-point unit descriptions are written in JHDL, which allows them to include placement constraints that make them highly optimized relative to some other implementations of floating-point units. Many vendors (Nallatech from the UK, SRC Computers in the US) have similar implementations, but our implementations seem to be somewhat higher performance. Our algorithm implementations are written in VHDL and models of the floating-point units are provided in VHDL as well. FPGA "programs" make multiple "calls" (hardware instantiations) to libraries of intellectual property (IP), such as the floating-point unit library described here. These programs are then compiled using a tool called a synthesizer (such as a tool from Synplicity, Inc.). The compiled file is a netlist of gates and flip-flops. This netlist is then mapped to a particular type of FPGA by a mapper and then a place- and-route tool. These tools assign the gates in the netlist to specific locations on the specific type of FPGA chip used and constructs the required routes between them. The result is a "bitstream" that is analogous to a compiled binary. The bitstream is loaded into the FPGA to create a specific hardware configuration.« less

  5. Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases

    SciTech Connect (OSTI)

    Shojaei, B.; McFadden, A.; Schultz, B. D.; Shabani, J.; Palmstrøm, C. J.

    2015-06-01

    A study of scattering mechanisms in gate tunable two dimensional electron gases confined to InAs/(Al,Ga)Sb heterostructures with varying interface roughness and dislocation density is presented. By integrating an insulated gate structure the evolution of the low temperature electron mobility and single-particle lifetime was determined for a previously unexplored density regime, 10{sup 11}–10{sup 12 }cm{sup −2}, in this system. Existing theoretical models were used to analyze the density dependence of the electron mobility and single particle lifetime in InAs quantum wells. Scattering was found to be dominated by charged dislocations and interface roughness. It was demonstrated that the growth of InAs quantum wells on nearly lattice matched GaSb substrate results in fewer dislocations, lower interface roughness, and improved low temperature transport properties compared to growth on lattice mismatched GaAs substrates.

  6. Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection

    SciTech Connect (OSTI)

    Ahn, Jae-Hyuk; Yun, Jeonghoon; Park, Inkyu; KI for the NanoCentury, KAIST, Daejeon 305-701; Mobile Sensor and IT Convergence Center, KAIST, Daejeon 305-701 ; Choi, Yang-Kyu

    2014-01-06

    A silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H{sub 2}) detection. The SiNW FETs are fabricated by top-down method and functionalized with palladium nanoparticles (PdNPs) through electron beam evaporation for H{sub 2} detection. The drain current of the PdNP-decorated device reversibly responds to H{sub 2} at different concentrations. The local side-gates allow individual addressing of each sensor and enhance the sensitivity by adjusting the working region to the subthreshold regime. A control experiment using a non-functionalized device verifies that the hydrogen-sensitivity is originated from the PdNPs functionalized on the SiNW surface.

  7. All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

    SciTech Connect (OSTI)

    Renteria, J.; Jiang, C.; Yan, Z.; Samnakay, R.; Goli, P.; Pope, T. R.; Salguero, T. T.; Wickramaratne, D.; Lake, R. K.; Khitun, A. G.; Balandin, A. A.

    2014-01-21

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  8. Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Broader source: Energy.gov [DOE]

    Presentation given by University of Alabama at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center of...

  9. Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Broader source: Energy.gov [DOE]

    Presentation given by University of Alabama at Birmingham at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE...

  10. Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Broader source: Energy.gov [DOE]

    Presentation given by University of Alabama Birmingham at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  11. Microsoft Word - Class_1_PMN_New_Gate_East_Fence_Line_09_09_15_rev. 11

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Kieling , Chief Hazardous Waste Bureau New Mexico Environment Department 2905 Rodeo Park Drive East, Building 1 Santa Fe, New Mexico 87505-6303 SEP 1 5 2015 Subject: Class 1 Permit Modification Notification to the Waste Isolation Pilot Plant Hazardous Waste Facility Permit Number: NM4890139088-TSDF Dear Mr. Kieling: Enclosed is a Notification of Class 1 Permit Modifications covering the following items: * Revise Attachment A4, Figure A4-2 to Add the New East Gate * Revise Attachment A4, Section

  12. Flexible stainless steel hose liner used to rehab drain pipe for seal gates and outlet tubes

    SciTech Connect (OSTI)

    Sauer, S.J.; Monsanto, R. )

    1993-08-01

    Not unlike other dams, the Bureau of Reclamation's 6,500-MW Grand Coulee Dam in Washington State has a large amount of embedded piping, conduits, and drains. Typically, these features were constructed of ductile iron, cast iron, or carbon steel materials. Over the years, excessive internal corrosion of the drains for 102-inch ring seal gates and outlet tubes created leaks that required attention. Reclamation performed a number of temporary repairs before it became evident that the drain system must be rehabilitated. After considering several alternatives for rehabilitation, Reclamation selected stainless steel flexible hose liners for the job. Reclamation is satisfied with the performance of the stainless steel flexible hose liner. The total cost for installing the liners for nine drain lines (for three outlet tubes) was $15,000. Of that, materials cost $7,500, and labor and overhead cost $7,500. The inserts themselves cost from $640 for an 18-foot by 6-inch section. While this was not the least expensive option, it was the best choice for this job. The procedure will be repeated for other outlet tubes at Grand Coulee. Information used in this rehabilitation is being made available to other Reclamation projects.

  13. Proposal for a graphene-based all-spin logic gate

    SciTech Connect (OSTI)

    Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud; Zhang, Youguang

    2015-02-16

    In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (∼μm), higher data throughput, faster computing speed (∼ns), and lower power consumption (∼μA) can be expected from the G-ASLG.

  14. Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping

    SciTech Connect (OSTI)

    Childres, Isaac; Jauregui, Luis A.; Chen, Yong P.

    2014-12-21

    We report a Raman spectroscopy study of graphene field-effect transistors with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back gate voltages (V{sub g}) for various irradiation dosages (R{sub e}). We study effects in the Raman spectra due to V{sub g}-induced doping and artificially created disorder at various R{sub e}. With moderate disorder (irradiation), the Raman G peak with respect to the graphene carrier density (n{sub FE}) exhibits a minimum in peak frequency and a maximum in peak width near the charge-neutral point (CNP). These trends are similar to those seen in previous works on pristine graphene and have been attributed to a reduction of electron-phonon coupling strength (D) and removal of the Kohn anomaly as the Fermi level moves away from the CNP. We also observe a maximum in I{sub 2D}/I{sub G} and weak maximum in I{sub D}/I{sub G} near the CNP. All the observed dependences of Raman parameters on n{sub FE} weaken at stronger disorder (higher R{sub e}), implying that disorder causes a reduction of D as well. Our findings are valuable for understanding Raman spectra and electron-phonon physics in doped and disordered graphene.

  15. A novel solution to the gated x-ray detector gain droop problem

    SciTech Connect (OSTI)

    Oertel, J. A. Archuleta, T. N.

    2014-11-15

    Microchannel plate (MCP), microstrip transmission line based, gated x-ray detectors used at the premier ICF laser facilities have a drop in gain as a function of mircostrip length that can be greater than 50% over 40 mm. These losses are due to ohmic losses in a microstrip coating that is less than the optimum electrical skin depth. The electrical skin depth for a copper transmission line at 3 GHz is 1.2 μm while the standard microstrip coating thickness is roughly half a single skin depth. Simply increasing the copper coating thickness would begin filling the MCP pores and limit the number of secondary electrons created in the MCP. The current coating thickness represents a compromise between gain and ohmic loss. We suggest a novel solution to the loss problem by overcoating the copper transmission line with five electrical skin depths (∼6 μm) of Beryllium. Beryllium is reasonably transparent to x-rays above 800 eV and would improve the carrier current on the transmission line. The net result should be an optically flat photocathode response with almost no measurable loss in voltage along the transmission line.

  16. Radial-directed fluid-pressure-loaded all-metal-sealed gate valve

    DOE Patents [OSTI]

    Batzer, Thomas H.

    1992-01-01

    A large diameter gate valve uses a radially directed fluid pressure loaded all metal seal formed by engaging and disengaging a fixed and a moveable seal element. The fixed element is formed of a circular flange which contains a pressure chamber with a deformable wall, and is mounted to the valve body. The moving seal element contains an annular recess which mates with the circular flange, and is carried on a moveable sub-frame which moves on a frame fixed in the valve body. The valve opening defines an axis in a first direction, and the sub-frame moves through the valve body in a second direction which is substantially perpendicular to the first direction. The sub-frame and moveable seal element move in the second direction until the moveable element reaches a stop mounted in the valve body at which position the moveable element is aligned with but spaced apart from the fixed element. As the sub-frame continues to move in the second direction, the moveable element is forced to move toward and engage the fixed element. The pressure chamber in the flange is then pressurized to complete the seal.

  17. Evaluation of soft-core processors on a Xilinx Virtex-5 field programmable gate array.

    SciTech Connect (OSTI)

    Learn, Mark Walter

    2011-04-01

    Node-based architecture (NBA) designs for future satellite projects hold the promise of decreasing system development time and costs, size, weight, and power and positioning the laboratory to address other emerging mission opportunities quickly. Reconfigurable field programmable gate array (FPGA)-based modules will comprise the core of several of the NBA nodes. Microprocessing capabilities will be necessary with varying degrees of mission-specific performance requirements on these nodes. To enable the flexibility of these reconfigurable nodes, it is advantageous to incorporate the microprocessor into the FPGA itself, either as a hard-core processor built into the FPGA or as a soft-core processor built out of FPGA elements. This document describes the evaluation of three reconfigurable FPGA-based soft-core processors for use in future NBA systems: the MicroBlaze (uB), the open-source Leon3, and the licensed Leon3. Two standard performance benchmark applications were developed for each processor. The first, Dhrystone, is a fixed-point operation metric. The second, Whetstone, is a floating-point operation metric. Several trials were run at varying code locations, loop counts, processor speeds, and cache configurations. FPGA resource utilization was recorded for each configuration.

  18. Operating experience feedback report -- Pressure locking and thermal binding of gate valves. Commercial power reactors: Volume 9

    SciTech Connect (OSTI)

    Hsu, C.

    1993-03-01

    The potential for valve inoperability caused by pressure locking and thermal binding has been known for many years in the nuclear industry. Pressure locking or thermal binding is a common-mode failure mechanism that can prevent a gate valve from opening, and could render redundant trains of safety systems or multiple safety systems inoperable. In spite of numerous generic communications issued in the past by the Nuclear Regulatory Commission (NRC) and industry, pressure locking and thermal binding continues to occur to gate valves installed in safety-related systems of both boding water reactors (BWRs) and pressurized water reactors (PWRs). The generic communications to date have not led to effective industry action to fully identify, evaluate, and correct the problem. This report provides a review of operating events involving these failure mechanisms. As a result of this review this report: (1) identifies conditions when the failure mechanisms have occurred, (2) identifies the spectrum of safety systems that have been subjected to the failure mechanisms, and (3) identifies conditions that may introduce the failure mechanisms under both normal and accident conditions. On the basis of the evaluation of the operating events, the Office for Analysis and Evaluation of Operational Data (AEOD) of the NRC concludes that the binding problems with gate valves are an important safety issue that needs priority NRC and industry attention. This report also provides AEOD`s recommendation for actions to effectively prevent the occurrence of valve binding failures.

  19. Tank 241-C-106 waste retrieval sluicing system (WRSS) sluicer assembly test reports

    SciTech Connect (OSTI)

    May, T.H., Westinghouse Hanford

    1996-08-26

    The sluicer test report documents the results of the Project W-320 factory testing conducted at the Olympic Tool and Engineering facility. Included are background information, test goals, a brief discussion on the sluicer hose problem, and conclusions.

  20. Project management plan for Project W-320, Tank 241-C-106 sluicing

    SciTech Connect (OSTI)

    Phillips, D.R.

    1994-12-01

    This Project Management Plan establishes the organization, plans, and systems for management of Project W-320 as defined in DOE Order 4700.1, Project Management System (DOE 1987).

  1. Project W-320, 241-C-106 sluicing: Civil/structural calculations. Volume 1

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-28

    This supporting document has been prepared to make the FDNW civil/structural calculations for Project W-320 readily retrievable.

  2. Project W-320, 241-C-106 sluicing HVAC calculations, Volume 1

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-08-07

    This supporting document has been prepared to make the FDNW calculations for Project W-320, readily retrievable. The report contains the following calculations: Exhaust airflow sizing for Tank 241-C-106; Equipment sizing and selection recirculation fan; Sizing high efficiency mist eliminator; Sizing electric heating coil; Equipment sizing and selection of recirculation condenser; Chiller skid system sizing and selection; High efficiency metal filter shielding input and flushing frequency; and Exhaust skid stack sizing and fan sizing.

  3. Project W-320, 241-C-106 sluicing: Piping calculations. Volume 4

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-24

    This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable. The objective of this calculation is to perform the structural analysis of the Pipe Supports designed for Slurry and Supernate transfer pipe lines in order to meet the requirements of applicable ASME codes. The pipe support design loads are obtained from the piping stress calculations W320-27-I-4 and W320-27-I-5. These loads are the total summation of the gravity, pressure, thermal and seismic loads. Since standard typical designs are used for each type of pipe support such as Y-Stop, Guide and Anchors, each type of support is evaluated for the maximum loads to which this type of supports are subjected. These loads are obtained from the AutoPipe analysis and used to check the structural adequacy of these supports.

  4. Sensitivity analysis of sluicing-leak parameters for the 241-AX tank farm

    SciTech Connect (OSTI)

    Davis, J.D., Westinghouse Hanford

    1996-12-12

    The scope of this work was to analyze the sensitivity of contaminant fluxes from the vadose zone to the water table, to several parameters. Some of these parameters are controllable. The results were evaluated with respect to their sensitivity to the following types of parameters: hydrostratigraphy and hydraulic properties; volume, duration, and source area of leakage; simultaneous leakage from multiple tanks; pre-existing leaks; barriers to infiltration of meteoric water; and contaminant concentrations and geochemistry.

  5. Project W-320, 241-C-106 sluicing: Piping calculations. Volume 5

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-24

    This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable.

  6. Project W-320, 241-C-106 sluicing: Civil/structural calculations. Volume 8

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-23

    This supporting document has been prepared to make the FDNW civil/structural calculations for Project W-320 readily retrievable.

  7. Project W-320, 241-C-106 sluicing: Piping calculations. Volume 3

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-07-25

    This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable.

  8. A voltage-gated pore for translocation of tRNA

    SciTech Connect (OSTI)

    Koley, Sandip; Adhya, Samit

    2013-09-13

    Highlights: A tRNA translocating complex was assembled from purified proteins. The complex translocates tRNA at a membrane potential of ?60 mV. Translocation requires Cys and His residues in the FeS center of RIC6 subunit. -- Abstract: Very little is known about how nucleic acids are translocated across membranes. The multi-subunit RNA Import Complex (RIC) from mitochondria of the kinetoplastid protozoon Leishmania tropica induces translocation of tRNAs across artificial or natural membranes, but the nature of the translocation pore remains unknown. We show that subunits RIC6 and RIC9 assemble on the membrane in presence of subunit RIC4A to form complex R3. Atomic Force Microscopy of R3 revealed particles with an asymmetric surface groove of ?20 nm rim diameter and ?1 nm depth. R3 induced translocation of tRNA into liposomes when the pH of the medium was lowered to ?6 in the absence of ATP. R3-mediated tRNA translocation could also be induced at neutral pH by a K{sup +} diffusion potential with an optimum of 6070 mV. Point mutations in the Cys{sub 2}His{sub 2} Fe-binding motif of RIC6, which is homologous to the respiratory Complex III FeS protein, abrogated import induced by low pH but not by K{sup +} diffusion potential. These results indicate that the R3 complex forms a pore that is gated by a proton-generated membrane potential and that the FeS binding region of RIC6 has a role in proton translocation. The tRNA import complex of L. tropica thus contains a novel macromolecular channel distinct from the mitochondrial protein import pore that is apparently involved in tRNA import in some species.

  9. High horizontal movements in longwall gate roads controlled by cable support systems

    SciTech Connect (OSTI)

    Dolinar, D.R.; Tadolini, S.C.; Blackwell, D.V.

    1996-12-01

    Controlling coal mine roofs subjected to high-horizontal stress conditions has always been difficult and uncertain. Traditional supports such as wooden cribs and posts, concrete donut cribs, and standing supports collapse and fail when the roof and floor move horizontally as mining progresses. The former U.S. Bureau of Mines (USBM) (currently the U.S. Department of Energy (DOE)), in cooperation with Western Fuels-Utah, Incorporated, conducted research to provide an alternative for traditional secondary support systems in a 3-entry gate road system subjected to high horizontal movements. The support system used in several other coal mine operations, consisted of internal high-strength galvanized resin-grouted cable supports. The system virtually eliminates the necessity for external crib, timber, or concrete supports. The support system consisted of 2.4 m (8 ft) full-column resin grouted bolts and 4.8 m (16 ft) long cable supports installed in conjunction with wire mesh and {open_quotes}Monster-Mats.{close_quotes} Cable loading and roof deformations were monitored to evaluate the behavior of the immediate and main roofs during first and second panel extractions. Additionally, cable trusses were installed on the longwall headgate to protect the coal conveyance system from roof and pillar falls created by the formation of cutters and gutters. The test results indicated that the designed support system successfully maintained the roof during the extraction of two longwall panels and dramatically reduced the cost of secondary support. This paper describes the theory of high-horizontal roof movements, the advantages of vertical cable supports and cable trusses, and presents the roof and cable measurements made to assess the support performance during longwall retreat mining.

  10. Method and infrastructure for cycle-reproducible simulation on large scale digital circuits on a coordinated set of field-programmable gate arrays (FPGAs)

    DOE Patents [OSTI]

    Asaad, Sameh W; Bellofatto, Ralph E; Brezzo, Bernard; Haymes, Charles L; Kapur, Mohit; Parker, Benjamin D; Roewer, Thomas; Tierno, Jose A

    2014-01-28

    A plurality of target field programmable gate arrays are interconnected in accordance with a connection topology and map portions of a target system. A control module is coupled to the plurality of target field programmable gate arrays. A balanced clock distribution network is configured to distribute a reference clock signal, and a balanced reset distribution network is coupled to the control module and configured to distribute a reset signal to the plurality of target field programmable gate arrays. The control module and the balanced reset distribution network are cooperatively configured to initiate and control a simulation of the target system with the plurality of target field programmable gate arrays. A plurality of local clock control state machines reside in the target field programmable gate arrays. The local clock state machines are configured to generate a set of synchronized free-running and stoppable clocks to maintain cycle-accurate and cycle-reproducible execution of the simulation of the target system. A method is also provided.

  11. Bell's Inequality and Universal Quantum Gates in a Cold-Atom Chiral Fermionic p-Wave Superfluid

    SciTech Connect (OSTI)

    Zhang Chuanwei; Tewari, Sumanta; Das Sarma, S.

    2007-11-30

    We propose and analyze a probabilistic scheme to entangle two spatially separated topological qubits in a p{sub x}+ip{sub y} superfluid using controlled collisions between atoms in movable dipole traps and unpaired atoms inside vortex cores in the superfluid. We discuss how to test the violation of Bell's inequality with the generated entanglement. A set of universal quantum gates is shown to be implementable deterministically using the entanglement despite the fact that the entangled states can be created only probabilistically.

  12. Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge

    SciTech Connect (OSTI)

    Tuenge, Jason R.

    2012-09-01

    Subsequent to preliminary investigations by the Golden Gate Bridge Highway & Transportation District (GGB), in coordination with Pacific Gas & Electric (PG&E), the GATEWAY Demonstration program was asked to evaluate the technical feasibility of replacing existing roadway lighting on the bridge with products utilizing LED technology. GGB and PG&E also indicated interest in induction (i.e., electrodeless fluorescent) technology, since both light source types feature rated lifetimes significantly exceeding those of the existing high-pressure sodium (HPS) and low-pressure sodium (LPS) products. The goal of the study was to identify any solutions which would reduce energy use and maintenance without compromising the quantity or quality of existing illumination. Products used for roadway lighting on the historic bridge must be installed within the existing amber-lensed shoebox-style luminaire housings. It was determined that induction technology does not appear to represent a viable alternative for the roadway luminaires in this application; any energy savings would be attributable to a reduction in light levels. Although no suitable LED retrofit kits were identified for installation within existing luminaire housings, several complete LED luminaires were found to offer energy savings of 6-18%, suggesting custom LED retrofit kits could be developed to match or exceed the performance of the existing shoeboxes. Luminaires utilizing ceramic metal halide (CMH) were also evaluated, and some were found to offer 28% energy savings, but these products might actually increase maintenance due to the shorter rated lamp life. Plasma technology was evaluated, as well, but no suitable products were identified. Analysis provided in this report was completed in May 2012. Although LED technologies are expected to become increasingly viable over time, and product mock-ups may reveal near-term solutions, some options not currently considered by GGB may ultimately merit evaluation. For example, it would be preferable in terms of performance to simply replace existing luminaires (some of which may already be nearing end of life) with fully-integrated LED or CMH luminaires rather than replacing internal components. Among other benefits, this would allow reputable manufacturers to offer standard warranties for their products. Similarly, the amber lenses might be reformulated such that they do not render white light sources in a greenish cast, thereby allowing the use of off-the-shelf LED or CMH products. Last, it should be noted that the existing amber-lensed shoeboxes bear no daytime resemblance to the LPS luminaires originally used to light the roadway.

  13. Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

    SciTech Connect (OSTI)

    Katsuno, Takashi Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu; Manaka, Takaaki; Iwamoto, Mitsumasa

    2014-06-23

    Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800 μs) the completion of drain-stress voltage (200 V) in the off-state, the second-harmonic (SH) signals appeared within 2 μm from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

  14. SU-E-T-66: Characterization of Radiation Dose Associated with Dark Currents During Beam Hold for Respiratory-Gated Electron Therapy

    SciTech Connect (OSTI)

    Hessler, J; Gupta, N; Rong, Y; Weldon, M

    2014-06-01

    Purpose: The main objective of this study was to estimate the radiation dose contributed by dark currents associated with the respiratory-gated electron therapy during beam hold. The secondary aim was to determine clinical benefits of using respiratory-gated electron therapy for left-sided breast cancer patients with positive internal mammary nodes (IMN). Methods: Measurements of the dark current-induced dose in all electron modes were performed on multiple Siemens and Varian linear accelerators by manually simulating beam-hold during respiratory gating. Dose was quantified at the machine isocenter by comparing the collected charge to the known output for all energies ranging from 6 to 18 MeV for a 10cm 10cm field at 100 SSD with appropriate solid-water buildup. Using the Eclipse treatment planning system, we compared the additional dose associated with dark current using gated electron fields to the dose uncertainties associated with matching gated photon fields and ungated electron fields. Dose uncertainties were seen as hot and cold spots along the match line of the fields. Results: The magnitude of the dose associated with dark current is highly correlated to the energy of the beam and the amount of time the beam is on hold. For lower energies (612 MeV), there was minimal dark current dose (0.11.3 cGy/min). Higher energies (1518 MeV) showed measurable amount of doses. The dark current associated with the electron beam-hold varied between linear accelerator vendors and depended on dark current suppression and the age of the linear accelerator. Conclusion: For energies up to 12 MeV, the dose associated with the dark current for respiratorygated electron therapy was shown to be negligible, and therefore should be considered an option for treating IMN positive left-sided breast cancer patients. However, at higher energies the benefit of respiratory gating may be outweighed by dose due to the dark current.

  15. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    SciTech Connect (OSTI)

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-11-14

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

  16. Management of the baseline shift using a new and simple method for respiratory-gated radiation therapy: Detectability and effectiveness of a flexible monitoring system

    SciTech Connect (OSTI)

    Tachibana, Hidenobu; Kitamura, Nozomi; Ito, Yasushi; Kawai, Daisuke; Nakajima, Masaru; Tsuda, Akihisa; Shiizuka, Hisao

    2011-07-15

    Purpose: In respiratory-gated radiation therapy, a baseline shift decreases the accuracy of target coverage and organs at risk (OAR) sparing. The effectiveness of audio-feedback and audio-visual feedback in correcting the baseline shift in the breathing pattern of the patient has been demonstrated previously. However, the baseline shift derived from the intrafraction motion of the patient's body cannot be corrected by these methods. In the present study, the authors designed and developed a simple and flexible system. Methods: The system consisted of a web camera and a computer running our in-house software. The in-house software was adapted to template matching and also to no preimage processing. The system was capable of monitoring the baseline shift in the intrafraction motion of the patient's body. Another marker box was used to monitor the baseline shift due to the flexible setups required of a marker box for gated signals. The system accuracy was evaluated by employing a respiratory motion phantom and was found to be within AAPM Task Group 142 tolerance (positional accuracy <2 mm and temporal accuracy <100 ms) for respiratory-gated radiation therapy. Additionally, the effectiveness of this flexible and independent system in gated treatment was investigated in healthy volunteers, in terms of the results from the differences in the baseline shift detectable between the marker positions, which the authors evaluated statistically. Results: The movement of the marker on the sternum [1.599 {+-} 0.622 mm (1 SD)] was substantially decreased as compared with the abdomen [6.547 {+-} 0.962 mm (1 SD)]. Additionally, in all of the volunteers, the baseline shifts for the sternum [-0.136 {+-} 0.868 (2 SD)] were in better agreement with the nominal baseline shifts than was the case for the abdomen [-0.722 {+-} 1.56 mm (2 SD)]. The baseline shifts could be accurately measured and detected using the monitoring system, which could acquire the movement of the marker on the sternum. The baseline shift-monitoring system with the displacement-based methods for highly accurate respiratory-gated treatments should be used to make most of the displacement-based gating methods. Conclusions: The advent of intensity modulated radiation therapy and volumetric modulated radiation therapy facilitates margin reduction for the planning target volumes and the OARs, but highly accurate irradiation is needed to achieve target coverage and OAR sparing with a small margin. The baseline shifts can affect treatment not only with the respiratory gating system but also without the system. Our system can manage the baseline shift and also enables treatment irradiation to be undertaken with high accuracy.

  17. Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

    SciTech Connect (OSTI)

    Yuan, Hui E-mail: qli6@gmu.edu; Li, Haitao; Zhu, Hao; Zhang, Kai; Baumgart, Helmut; Bonevich, John E.; Richter, Curt A.; Li, Qiliang E-mail: qli6@gmu.edu

    2014-12-08

    Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33?eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metaloxidesemiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

  18. Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

    SciTech Connect (OSTI)

    Tvri, E.; Csontos, M., E-mail: csontos@dept.phy.bme.hu; Krivchy, T.; Csonka, S. [Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, Budafoki t 8, H-1111 Budapest (Hungary); Frjes, P. [MEMS Lab, Institute for Technical Physics and Materials Science, RCNS, HAS, Konkoly-Thege t 29-33, H-1121 Budapest (Hungary)

    2014-09-22

    The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

  19. DNA and RNA sequencing by nanoscale reading through programmable electrophoresis and nanoelectrode-gated tunneling and dielectric detection

    DOE Patents [OSTI]

    Lee, James W.; Thundat, Thomas G.

    2005-06-14

    An apparatus and method for performing nucleic acid (DNA and/or RNA) sequencing on a single molecule. The genetic sequence information is obtained by probing through a DNA or RNA molecule base by base at nanometer scale as though looking through a strip of movie film. This DNA sequencing nanotechnology has the theoretical capability of performing DNA sequencing at a maximal rate of about 1,000,000 bases per second. This enhanced performance is made possible by a series of innovations including: novel applications of a fine-tuned nanometer gap for passage of a single DNA or RNA molecule; thin layer microfluidics for sample loading and delivery; and programmable electric fields for precise control of DNA or RNA movement. Detection methods include nanoelectrode-gated tunneling current measurements, dielectric molecular characterization, and atomic force microscopy/electrostatic force microscopy (AFM/EFM) probing for nanoscale reading of the nucleic acid sequences.

  20. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  1. Separation and counting of single molecules through nanofluidics, programmable electrophoresis, and nanoelectrode-gated tunneling and dielectric detection

    DOE Patents [OSTI]

    Lee, James W.; Thundat, Thomas G.

    2006-04-25

    An apparatus for carrying out the separation, detection, and/or counting of single molecules at nanometer scale. Molecular separation is achieved by driving single molecules through a microfluidic or nanofluidic medium using programmable and coordinated electric fields. In various embodiments, the fluidic medium is a strip of hydrophilic material on nonconductive hydrophobic surface, a trough produced by parallel strips of hydrophobic nonconductive material on a hydrophilic base, or a covered passageway produced by parallel strips of hydrophobic nonconductive material on a hydrophilic base together with a nonconductive cover on the parallel strips of hydrophobic nonconductive material. The molecules are detected and counted using nanoelectrode-gated electron tunneling methods, dielectric monitoring, and other methods.

  2. Evaluation of the Leon3 soft-core processor within a Xilinx radiation-hardened field-programmable gate array.

    SciTech Connect (OSTI)

    Learn, Mark Walter

    2012-01-01

    The purpose of this document is to summarize the work done to evaluate the performance of the Leon3 soft-core processor in a radiation environment while instantiated in a radiation-hardened static random-access memory based field-programmable gate array. This evaluation will look at the differences between two soft-core processors: the open-source Leon3 core and the fault-tolerant Leon3 core. Radiation testing of these two cores was conducted at the Texas A&M University Cyclotron facility and Lawrence Berkeley National Laboratory. The results of these tests are included within the report along with designs intended to improve the mitigation of the open-source Leon3. The test setup used for evaluating both versions of the Leon3 is also included within this document.

  3. Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-06-30

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. 20 figs.

  4. The Conformation of Bound GMPPNP Suggests a Mechanism for Gating the Active Site of the SRP GTPase

    SciTech Connect (OSTI)

    Padmanabhan, S.; Freymann, D.

    2010-03-08

    The signal recognition particle (SRP) is a phylogenetically conserved ribonucleoprotein that mediates cotranslational targeting of secreted and membrane proteins to the membrane. Targeting is regulated by GTP binding and hydrolysis events that require direct interaction between structurally homologous 'NG' GTPase domains of the SRP signal recognition subunit and its membrane-associated receptor, SR{alpha}. Structures of both the apo and GDP bound NG domains of the prokaryotic SRP54 homolog, Ffh, and the prokaryotic receptor homolog, FtsY, have been determined. The structural basis for the GTP-dependent interaction between the two proteins, however, remains unknown. We report here two structures of the NG GTPase of Ffh from Thermus aquaticus bound to the nonhydrolyzable GTP analog GMPPNP. Both structures reveal an unexpected binding mode in which the {beta}-phosphate is kinked away from the binding site and magnesium is not bound. Binding of the GTP analog in the canonical conformation found in other GTPase structures is precluded by constriction of the phosphate binding P loop. The structural difference between the Ffh complex and other GTPases suggests a specific conformational change that must accompany movement of the nucleotide from an inactive to an active binding mode. Conserved side chains of the GTPase sequence motifs unique to the SRP subfamily may function to gate formation of the active GTP bound conformation. Exposed hydrophobic residues provide an interaction surface that may allow regulation of the GTP binding conformation, and thus activation of the GTPase, during the association of SRP with its receptor.

  5. Feasibility of gate-turnoff thyristors in a high-voltage direct-current transmission system: Final report

    SciTech Connect (OSTI)

    McMurray, W.

    1987-08-01

    This study to identify potentially attractive applications for gate-turnoff thyristor (GTO) converters in utility systems includes both high-voltage direct-current (HVDC) valves and static volt-ampere reactive (VAR) controllers. The work includes a broad review of basic principles and the power circuit arrangements that are judged to be most attractive. The major differences between ordinary thyristors and GTO converters are discussed, including alternative HVDC transmission systems and static VAR controllers that are possible with GTOs. Whereas a current-source type of converter is the obvious choice with ordinary thyristors, the use of GTOs allows either current-source or voltage-source converters to be considered. A computer-aided analysis of the basic 6-pulse GTO current-source converter system is presented, including general equations for steady-state operation and plotting calculated waveforms. An analysis of a GTO voltage-source converter is given in less detail. Due to incomplete performance data, unresolved critical problems such as protection, and the disadvantages of higher cost, complexity and losses, it is difficult to recommend a specific GTO converter system at this time. The major advantage that GTO converters can offer is rapid and smoothly continuous control of reactive power. Further development of GTO converters should be aimed towards an application where reactive power control is very important and not readily achievable by conventional methods. 12 refs., 47 figs.

  6. Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1998-01-01

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings.

  7. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    SciTech Connect (OSTI)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji Shimura, Takayoshi; Watanabe, Heiji; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  8. High mobility field effect transistor based on BaSnO{sub 3} with Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Park, Chulkwon; Kim, Useong; Ju, Chan Jong; Park, Ji Sung; Kim, Young Mo; Char, Kookrin

    2014-11-17

    We fabricated an n-type accumulation-mode field effect transistor based on BaSnO{sub 3} transparent perovskite semiconductor, taking advantage of its high mobility and oxygen stability. We used the conventional metal-insulator-semiconductor structures: (In,Sn){sub 2}O{sub 3} as the source, drain, and gate electrodes, Al{sub 2}O{sub 3} as the gate insulator, and La-doped BaSnO{sub 3} as the semiconducting channel. The Al{sub 2}O{sub 3} gate oxide was deposited by atomic layer deposition technique. At room temperature, we achieved the field effect mobility value of 17.8?cm{sup 2}/Vs and the I{sub on}/I{sub off} ratio value higher than 10{sup 5} for V{sub DS}?=?1?V. These values are higher than those previously reported on other perovskite oxides, in spite of the large density of threading dislocations in the BaSnO{sub 3} on SrTiO{sub 3} substrates. However, a relatively large subthreshold swing value was found, which we attribute to the large density of charge traps in the Al{sub 2}O{sub 3} as well as the threading dislocations.

  9. Spin-polarization and spin-dependent logic gates in a double quantum ring based on Rashba spin-orbit effect: Non-equilibrium Green's function approach

    SciTech Connect (OSTI)

    Eslami, Leila, E-mail: Leslami@iust.ac.ir; Esmaeilzadeh, Mahdi, E-mail: mahdi@iust.ac.ir [Department of Physics, Iran University of Science and Technology, Tehran 16846 (Iran, Islamic Republic of)

    2014-02-28

    Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from ?1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted.

  10. Bottom-gate coplanar graphene transistors with enhanced graphene adhesion on atomic layer deposition Al{sub 2}O{sub 3}

    SciTech Connect (OSTI)

    Park, Dong-Wook; Mikael, Solomon; Chang, Tzu-Hsuan; Ma, Zhenqiang; Gong, Shaoqin

    2015-03-09

    A graphene transistor with a bottom-gate coplanar structure and an atomic layer deposition (ALD) aluminum oxide (Al{sub 2}O{sub 3}) gate dielectric is demonstrated. Wetting properties of ALD Al{sub 2}O{sub 3} under different deposition conditions are investigated by measuring the surface contact angle. It is observed that the relatively hydrophobic surface is suitable for adhesion between graphene and ALD Al{sub 2}O{sub 3}. To achieve hydrophobic surface of ALD Al{sub 2}O{sub 3}, a methyl group (CH{sub 3})-terminated deposition method has been developed and compared with a hydroxyl group (OH)-terminated deposition. Based on this approach, bottom-gate coplanar graphene field-effect transistors are fabricated and characterized. A post-thermal annealing process improves the performance of the transistors by enhancing the contacts between the source/drain metal and graphene. The fabricated transistor shows an I{sub on}/I{sub off} ratio, maximum transconductance, and field-effect mobility of 4.04, 20.1??S at V{sub D}?=?0.1?V, and 249.5?cm{sup 2}/Vs, respectively.

  11. SU-E-T-361: Clinical Benefit of Automatic Beam Gating Mixed with Breath Hold in Radiation Therapy of Left Breast

    SciTech Connect (OSTI)

    Wu, J; Hill, G; Spiegel, J; Ye, J; Mehta, V

    2014-06-01

    Purpose: To investigate the clinical and dosimetric benefits of automatic gating of left breast mixed with breath-hold technique. Methods: Two Active Breathing Control systems, ABC2.0 and ABC3.0, were used during simulation and treatment delivery. The two systems are different such that ABC2.0 is a breath-hold system without beam control capability, while ABC3.0 has capability in both breath-hold and beam gating. At simulation, each patient was scanned twice: one with free breathing (FB) and one with breath hold through ABC. Treatment plan was generated on the CT with ABC. The same plan was also recalculated on the CT with FB. These two plans were compared to assess plan quality. For treatments with ABC2.0, beams with MU > 55 were manually split into multiple subfields. All subfields were identical and shared the total MU. For treatment with ABC3.0, beam splitting was unnecessary. Instead, treatment was delivered in gating mode mixed with breath-hold technique. Treatment delivery efficiency using the two systems was compared. Results: The prescribed dose was 50.4Gy at 1.8Gy/fraction. The maximum heart dose averaged over 10 patients was 46.02.5Gy and 24.512.2Gy for treatments with FB and with ABC respectively. The corresponding heart V10 was 13.23.6% and 1.01.6% respectively. The averaged MUs were 99.87.5 for LMT, 99.29.4 for LLT. For treatment with ABC2.0, normally the original beam was split into 2 subfields. The averaged total time to delivery all beams was 4.30.4min for treatments with ABC2.0 and 3.30.6min for treatments with ABC3.0 in gating mode. Conclusion: Treatment with ABC tremendously reduced heart dose. Compared to treatments with ABC2.0, gating with ABC3.0 reduced the total treatment time by 23%. Use of ABC3.0 improved the delivery efficiency, and eliminated the possibility of mistreatments. The latter may happen with ABC2.0 where beam is not terminated when breath signal falls outside of the treatment window.

  12. Development and Deployment of the Extended Reach Sluicing System (ERSS) for Retrieval of Hanford Single Shell Tank Waste. Draft

    SciTech Connect (OSTI)

    Bauer, Roger E.; Figley, Reed R.; Innes, A. G.

    2013-11-11

    A history of the evolution and the design development of Extended Reach Sluicer System (ERSS) is presented. Several challenges are described that had to be overcome to create a machine that went beyond the capabilities of prior generation sluicers to mobilize waste in Single Shell Tanks for pumping into Double Shell Tank receiver tanks. Off-the-shelf technology and traditional hydraulic fluid power systems were combined with the custom-engineered components to create the additional functionality of the ERSS, while still enabling it to fit within very tight entry envelope into the SST. Problems and challenges inevitably were encountered and overcome in ways that enhance the state of the art of fluid power applications in such constrained environments. Future enhancements to the ERSS design are explored for retrieval of tanks with different dimensions and internal obstacles.

  13. SU-D-BRE-02: Development and Commissioning of A Gated Spot Scanning Proton Beam Therapy System with Real-Time Tumor-Tracking

    SciTech Connect (OSTI)

    Umegaki, K; Matsuura, T.; Takao, S.; Nihongi, H.; Yamada, T.; Miyamoto, N.; Shimizu, S.; Shirato, H.; Matsuda, K.; Nakamura, F.; Umezawa, M.; Hiramoto, K.

    2014-06-01

    Purpose: A novel Proton Beam Therapy system has been developed by integrating Real-Time Tumor-Tracking (RTRT) and discrete spot scanning techniques. The system dedicated for spot scanning delivers significant advantages for both clinical and economical points of view. The system has the ability to control dose distribution with spot scanning beams and to gate the beams from the synchrotron to irradiate moving tumors only when the actual positions of them are within the planned position. Methods: The newly designed system consists of a synchrotron, beam transport systems, a compact and rotating gantry system with robotic couch and two orthogonal sets of X-ray fluoroscopes. The fully compact design of the system has been realized by reducing the maximum energy of the beam to 220MeV, corresponding to 30g/cm2 range and the number of circulating protons per synchrotron operation cycle, due to higher beam utilization efficiency in spot scanning. To improve the irradiation efficiency in the integration of RTRT and spot scanning, a new control system has been developed to enable multiple gated irradiation per operation cycle according to the gating signals. After the completion of the equipment installation, beam tests and commissioning has been successfully performed. Results: The basic performances and beam characteristics through the synchrotron accelerator to iso-center have been confirmed and the performance test of the irradiation nozzle and whole system has been appropriately completed. CBCT image has been checked and sufficient quality was obtained. RTRT system has been demonstrated and realized accurate dose distributions for moving targets. Conclusion: The gated spot scanning Proton Beam Therapy system with Real-Time Tumor-Tracking has been developed, successfully installed and tested. The new system enables us to deliver higher dose to the moving target tumors while sparing surrounding normal tissues and to realize the compact design of the system and facility by maximizing the efficiency of proton beam utilization. This research is granted by the Japan Society for the Promotion of Science(JSPS) through the Funding Program for World-Leading Innovative R and D on Science and Technology(FIRST Program), initiated by the Council for Science and Technology Policy(CSTP)

  14. A two-fold reduction in measurement time for neutron assay: Initial tests of a prototype dual-gated shift register

    SciTech Connect (OSTI)

    Stewart, J.E.; Bourret, S.C.; Krick, M.S.; Hansen, W.J.; Harker, W.C.

    1996-09-01

    Neutron coincidence counting (NCC) is used routinely around the world for nondestructive mass assay of uranium and plutonium in many forms, including waste. Compared with other methods, NCC is generally the most flexible, economic, and rapid. Many applications of NCC would benefit from a reduction in counting time required for a fixed random error. We have developed and tested the first prototype of a dual- gated, shift-register-based electronics unit that offers the potential of decreased measurement time for all passive and active NCC applications.

  15. "The gate-keepers in a changing world: integrating microbial diversity and dynamics with global change biology."

    SciTech Connect (OSTI)

    Jessica L.M. Gutknecht and Kathryn M. Docherty

    2011-11-01

    Microorganisms (Bacteria, Archaea and Fungi) are the gate-keepers of many ecosystem-scale biogeochemical cycles. Although there have been measurable changes in ecosystem function due to human activities such as greenhouse gas production, nutrient loading, land-use change, and water consumption, few studies have connected microbial community dynamics with these changes in ecosystem function. Specifically, very little is known about how global changes will induce important functional changes in microbial biodiversity. Even less is known about how microbial functional changes could alter rates of nutrient cycling or whether microbial communities have enough functional redundancy that changes will have little impact on overall process rates. The proposed symposium will provide an overview of this emerging research area, with emphasis on linking the microorganisms directly to important ecological functions under the influence of global change dynamics. The session will include both broad overviews as well as specific case-studies by researchers who examine microbial communities from a variety of taxonomic levels and from various environments. The session will begin broadly, with speakers discussing how microbial communities may inform ecosystem-scale global change studies, and help to make microbial ecological knowledge more tangible for a broad range of ecologists. The session will continue with case studies of microbial community information informing process in global change experiments. Finally, the session will close with speakers discussing how microbial community information might fit into global change models, and what types of information are useful for future studies. We have requested that speakers particularly incorporate their views on what types of microbial data is useful and informative in the context of larger ecosystem processes. We foresee that this session could serve as a focal point for global change microbial ecologists to meet and discuss their field at the ESA 2010 General Meeting. However, more importantly, the session will provide for a broad range of interests for ecosystem ecologists, theoretical ecologists, and global change biologists, and will foster communication between these groups to generate informative microbial community data in the future.

  16. NEGATIVE GATE GENERATOR

    DOE Patents [OSTI]

    Jones, C.S.; Eaton, T.E.

    1958-02-01

    This patent relates to pulse generating circuits and more particularly to rectangular pulse generators. The pulse generator of the present invention incorporates thyratrons as switching elements to discharge a first capacitor through a load resistor to initiate and provide the body of a Pulse, and subsequently dlscharge a second capacitor to impress the potential of its charge, with opposite potential polarity across the load resistor to terminate the pulse. Accurate rectangular pulses in the millimicrosecond range are produced across a low impedance by this generator.

  17. David Gates home page

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Experiment 1987-1993 Research Assistant, Columbia University, High Beta Tokamak Group. Education 1993 Ph. D.- Columbia University, Dept. of Applied Physics, Graduate School of...

  18. Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs high electron mobility transistor

    SciTech Connect (OSTI)

    Moro-Melgar, Diego; Mateos, Javier Gonzlez, Toms Vasallo, Beatriz G.

    2014-12-21

    By using a Monte Carlo simulator, the influence of the tunnel injection through the Schottky contact at the gate electrode of a GaInAs/AlInAs High Electron Mobility Transistor (HEMT) has been studied in terms of the static and noise performance. The method used to characterize the quantum tunnel current has been the Wentzel-Kramers-Brillouin (WKB) approach. The possibility of taking into account the influence of the image charge effect in the potential barrier height has been included as well. Regarding the static behavior, tunnel injection leads to a decrease in the drain current I{sub D} due to an enhancement of the potential barrier controlling the carrier transport through the channel. However, the pinch-off is degraded due to the tunneling current. Regarding the noise behavior, since the fluctuations in the potential barrier height caused by the tunnel-injected electrons are strongly coupled with the drain current fluctuations, a significant increase in the drain-current noise takes place, even when the tunnel effect is hardly noticeable in the static I-V characteristics, fact that must be taken into account when designing scaled HEMT for low-noise applications. In addition, tunnel injection leads to the appearance of full shot noise in the gate current.

  19. AVTA Federal Fleet PEV Readiness Data Logging and Characterization Study for the National Park Service: Golden Gate National Recreation Area

    SciTech Connect (OSTI)

    Stephen Schey; Jim Francfort

    2014-03-01

    Battelle Energy Alliance, LLC, managing and operating contractor for the U.S. Department of Energy's Idaho National Laboratory, is the lead laboratory for U.S. Department of Energy Advanced Vehicle Testing. Battelle Energy Alliance, LLC contracted with Intertek Testing Services, North America (ITSNA) to collect data on federal fleet operations as part of the Advanced Vehicle Testing Activity's Federal Fleet Vehicle Data Logging and Characterization study. The Advanced Vehicle Testing Activity study seeks to collect data to validate the utilization of advanced electric drive vehicle transportation. This report focuses on the Golden Gate National Recreation Area (GGNRA) fleet to identify daily operational characteristics of select vehicles and report findings on vehicle and mission characterizations to support the successful introduction of plug-in electric vehicles (PEVs) into the agencies' fleets. Individual observations of these selected vehicles provide the basis for recommendations related to electric vehicle adoption and whether a battery electric vehicle or plug-in hybrid electric vehicle (PHEV) (collectively PEVs) can fulfill the mission requirements. GGNRA identified 182 vehicles in its fleet, which are under the management of the U.S. General Services Administration. Fleet vehicle mission categories are defined in Section 4, and while the GGNRA vehicles conduct many different missions, only two (i.e., support and law enforcement missions) were selected by agency management to be part of this fleet evaluation. The selected vehicles included sedans, trucks, and sport-utility vehicles. This report will show that battery electric vehicles and/or PHEVs are capable of performing the required missions and providing an alternative vehicle for support vehicles and PHEVs provide the same for law enforcement, because each has a sufficient range for individual trips and time is available each day for charging to accommodate multiple trips per day. These charging events could occur at the vehicle home base, high-use work areas, or intermediately along routes that the vehicles frequently travel. Replacement of vehicles in the current fleet would result in significant reductions in the emission of greenhouse gases and petroleum use, while also reducing fuel costs. The San Francisco Bay Area is a leader in the adoption of PEVs in the United States. PEV charging stations, or more appropriately identified as electric vehicle supply equipment, located on the GGNRA facility would be a benefit for both GGNRA fleets and general public use. Fleet drivers and park visitors operating privately owned PEVs benefit by using the charging infrastructure. ITSNA recommends location analysis of the GGNRA site to identify the optimal placement of the electric vehicle supply equipment station. ITSNA recognizes the support of Idaho National Laboratory and ICF International for their efforts to initiate communication with the National Parks Service and GGNRA for participation in the study. ITSNA is pleased to provide this report and is encouraged by the high interest and support from the National Park Service and GGNRA personnel.

  20. Upgrading the Center for Lightweighting Automotive Materials and Processing - a GATE Center of Excellence at the University of Michigan-Dearborn

    SciTech Connect (OSTI)

    Mallick, P. K.

    2012-08-30

    The Center for Lightweighting Materials and Processing (CLAMP) was established in September 1998 with a grant from the Department of Energy’s Graduate Automotive Technology Education (GATE) program. The center received the second round of GATE grant in 2005 under the title “Upgrading the Center for Lightweighting Automotive Materials and Processing”. Using the two grants, the Center has successfully created 10 graduate level courses on lightweight automotive materials, integrated them into master’s and PhD programs in Automotive Systems Engineering, and offered them regularly to the graduate students in the program. In addition, the Center has created a web-based lightweight automotive materials database, conducted research on lightweight automotive materials and organized seminars/symposia on lightweight automotive materials for both academia and industry. The faculty involved with the Center has conducted research on a variety of topics related to design, testing, characterization and processing of lightweight materials for automotive applications and have received numerous research grants from automotive companies and government agencies to support their research. The materials considered included advanced steels, light alloys (aluminum, magnesium and titanium) and fiber reinforced polymer composites. In some of these research projects, CLAMP faculty have collaborated with industry partners and students have used the research facilities at industry locations. The specific objectives of the project during the current funding period (2005 – 2012) were as follows: (1) develop new graduate courses and incorporate them in the automotive systems engineering curriculum (2) improve and update two existing courses on automotive materials and processing (3) upgrade the laboratory facilities used by graduate students to conduct research (4) expand the Lightweight Automotive Materials Database to include additional materials, design case studies and make it more accessible to outside users (5) provide support to graduate students for conducting research on lightweight automotive materials and structures (6) provide industry/university interaction through a graduate certificate program on automotive materials and technology idea exchange through focused seminars and symposia on automotive materials.

  1. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    SciTech Connect (OSTI)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-10-06

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO{sub 2} interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  2. Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

    SciTech Connect (OSTI)

    Wang, Junjie; Feng, Simin; Rhodes, Daniel; Balicas, Luis; Nguyen, Minh An T.; Watanabe, K.; Taniguchi, T.; Mallouk, Thomas E.; Terrones, Mauricio; Zhu, J.

    2015-04-13

    Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe{sub 2} field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10{sup 13}/cm{sup 2}/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

  3. Mitigation of cache memory using an embedded hard-core PPC440 processor in a Virtex-5 Field Programmable Gate Array.

    SciTech Connect (OSTI)

    Learn, Mark Walter

    2010-02-01

    Sandia National Laboratories is currently developing new processing and data communication architectures for use in future satellite payloads. These architectures will leverage the flexibility and performance of state-of-the-art static-random-access-memory-based Field Programmable Gate Arrays (FPGAs). One such FPGA is the radiation-hardened version of the Virtex-5 being developed by Xilinx. However, not all features of this FPGA are being radiation-hardened by design and could still be susceptible to on-orbit upsets. One such feature is the embedded hard-core PPC440 processor. Since this processor is implemented in the FPGA as a hard-core, traditional mitigation approaches such as Triple Modular Redundancy (TMR) are not available to improve the processor's on-orbit reliability. The goal of this work is to investigate techniques that can help mitigate the embedded hard-core PPC440 processor within the Virtex-5 FPGA other than TMR. Implementing various mitigation schemes reliably within the PPC440 offers a powerful reconfigurable computing resource to these node-based processing architectures. This document summarizes the work done on the cache mitigation scheme for the embedded hard-core PPC440 processor within the Virtex-5 FPGAs, and describes in detail the design of the cache mitigation scheme and the testing conducted at the radiation effects facility on the Texas A&M campus.

  4. Coordinated role of voltage-gated sodium channels and the Na{sup +}/H{sup +} exchanger in sustaining microglial activation during inflammation

    SciTech Connect (OSTI)

    Hossain, Muhammad M.; Sonsalla, Patricia K.; Richardson, Jason R.

    2013-12-01

    Persistent neuroinflammation and microglial activation play an integral role in the pathogenesis of many neurological disorders. We investigated the role of voltage-gated sodium channels (VGSC) and Na{sup +}/H{sup +} exchangers (NHE) in the activation of immortalized microglial cells (BV-2) after lipopolysaccharide (LPS) exposure. LPS (10 and 100 ng/ml) caused a dose- and time-dependent accumulation of intracellular sodium [(Na{sup +}){sub i}] in BV-2 cells. Pre-treatment of cells with the VGSC antagonist tetrodotoxin (TTX, 1 ?M) abolished short-term Na{sup +} influx, but was unable to prevent the accumulation of (Na{sup +}){sub i} observed at 6 and 24 h after LPS exposure. The NHE inhibitor cariporide (1 ?M) significantly reduced accumulation of (Na{sup +}){sub i} 6 and 24 h after LPS exposure. Furthermore, LPS increased the mRNA expression and protein level of NHE-1 in a dose- and time-dependent manner, which was significantly reduced after co-treatment with TTX and/or cariporide. LPS increased production of TNF-?, ROS, and H{sub 2}O{sub 2} and expression of gp91{sup phox}, an active subunit of NADPH oxidase, in a dose- and time-dependent manner, which was significantly reduced by TTX or TTX + cariporide. Collectively, these data demonstrate a closely-linked temporal relationship between VGSC and NHE-1 in regulating function in activated microglia, which may provide avenues for therapeutic interventions aimed at reducing neuroinflammation. - Highlights: LPS causes immediate increase in sodium through VGSC and subsequently through the NHE-1. Inhibition of VGSC reduces increases in NHE-1 and gp91{sup phox}. Inhibition of VGSC and NHE-1 reduces NADPH oxidase-mediated Tnf-?, ROS, and H{sub 2}O{sub 2} production. NHE-1 and Na{sub v}1.6 may be viable targets for therapeutic interventions to reduce neuroinflammation in neurodegenerative disease.

  5. A versatile LabVIEW and field-programmable gate array-based scanning probe microscope for in operando electronic device characterization

    SciTech Connect (OSTI)

    Berger, Andrew J. Page, Michael R.; Young, Justin R.; Bhallamudi, Vidya P.; Johnston-Halperin, Ezekiel; Pelekhov, Denis V.; Hammel, P. Chris; Jacob, Jan; Lewis, Jim; Wenzel, Lothar

    2014-12-15

    Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In operando characterization of such devices by scanning probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanning probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field-programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform the various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically biased graphene field-effect transistor device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.

  6. Anti-addiction drug ibogaine inhibits voltage-gated ionic currents: A study to assess the drug's cardiac ion channel profile

    SciTech Connect (OSTI)

    Koenig, Xaver; Kovar, Michael; Rubi, Lena; Mike, Agnes K.; Lukacs, Peter; Gawali, Vaibhavkumar S.; Todt, Hannes; Hilber, Karlheinz; Sandtner, Walter

    2013-12-01

    The plant alkaloid ibogaine has promising anti-addictive properties. Albeit not licenced as a therapeutic drug, and despite hints that ibogaine may perturb the heart rhythm, this alkaloid is used to treat drug addicts. We have recently reported that ibogaine inhibits human ERG (hERG) potassium channels at concentrations similar to the drugs affinity for several of its known brain targets. Thereby the drug may disturb the heart's electrophysiology. Here, to assess the drug's cardiac ion channel profile in more detail, we studied the effects of ibogaine and its congener 18-Methoxycoronaridine (18-MC) on various cardiac voltage-gated ion channels. We confirmed that heterologously expressed hERG currents are reduced by ibogaine in low micromolar concentrations. Moreover, at higher concentrations, the drug also reduced human Na{sub v}1.5 sodium and Ca{sub v}1.2 calcium currents. Ion currents were as well reduced by 18-MC, yet with diminished potency. Unexpectedly, although blocking hERG channels, ibogaine did not prolong the action potential (AP) in guinea pig cardiomyocytes at low micromolar concentrations. Higher concentrations (? 10 ?M) even shortened the AP. These findings can be explained by the drug's calcium channel inhibition, which counteracts the AP-prolonging effect generated by hERG blockade. Implementation of ibogaine's inhibitory effects on human ion channels in a computer model of a ventricular cardiomyocyte, on the other hand, suggested that ibogaine does prolong the AP in the human heart. We conclude that therapeutic concentrations of ibogaine have the propensity to prolong the QT interval of the electrocardiogram in humans. In some cases this may lead to cardiac arrhythmias. - Highlights: We study effects of anti-addiction drug ibogaine on ionic currents in cardiomyocytes. We assess the cardiac ion channel profile of ibogaine. Ibogaine inhibits hERG potassium, sodium and calcium channels. Ibogaines effects on ion channels are a potential source of cardiac arrhythmias. 18-Methoxycoronaridine has a lower affinity for cardiac ion channels than ibogaine.

  7. Gated charged-particle trap

    DOE Patents [OSTI]

    Benner, W.H.

    1999-03-09

    The design and operation of a new type of charged-particle trap provides simultaneous measurements of mass, charge, and velocity of large electrospray ions. The trap consists of a detector tube mounted between two sets of center-bored trapping plates. Voltages applied to the trapping plates define symmetrically-opposing potential valleys which guide axially-injected ions to cycle back and forth through the charge-detection tube. A low noise charge-sensitive amplifier, connected to the tube, reproduces the image charge of individual ions as they pass through the detector tube. Ion mass is calculated from measurement of ion charge and velocity following each passage through the detector. 5 figs.

  8. from Microsoft's Bill Gates. Summer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    frmac Federal Radiological Monitoring and Assessment Center The Federal Radiological Monitoring and Assessment Center (FRMAC) is a federal asset available on request by the Department of Homeland Security (DHS) and state and local agencies to respond to a nuclear or radiological incident. The FRMAC is an interagency organization with representation... Emergency Response Planning for Emergencies Exercise Program Field Assistance and Oversight Liaison Homeland Security and Emergency Management

  9. Gated charged-particle trap

    DOE Patents [OSTI]

    Benner, W. Henry

    1999-01-01

    The design and operation of a new type of charged-particle trap provides simultaneous measurements of mass, charge, and velocity of large electrospray ions. The trap consists of a detector tube mounted between two sets of center-bored trapping plates. Voltages applied to the trapping plates define symmetrically-opposing potential valleys which guide axially-injected ions to cycle back and forth through the charge-detection tube. A low noise charge-sensitive amplifier, connected to the tube, reproduces the image charge of individual ions as they pass through the detector tube. Ion mass is calculated from measurement of ion charge and velocity following each passage through the detector.

  10. Structures of pseudechetoxin and pseudecin, two snake-venom cysteine-rich secretory proteins that target cyclic nucleotide-gated ion channels: implications for movement of the C-terminal cysteine-rich domain

    SciTech Connect (OSTI)

    Suzuki, Nobuhiro; Yamazaki, Yasuo; Brown, R. Lane; Fujimoto, Zui; Morita, Takashi; Mizuno, Hiroshi

    2008-10-01

    The structures of pseudechetoxin and pseudecin suggest that both proteins bind to cyclic nucleotide-gated ion channels in a manner in which the concave surface occludes the pore entrance. Cyclic nucleotide-gated (CNG) ion channels play pivotal roles in sensory transduction by retinal photoreceptors and olfactory neurons. The elapid snake toxins pseudechetoxin (PsTx) and pseudecin (Pdc) are the only known protein blockers of CNG channels. These toxins belong to a cysteine-rich secretory protein (CRISP) family containing an N-terminal pathogenesis-related proteins of group 1 (PR-1) domain and a C-terminal cysteine-rich domain (CRD). PsTx and Pdc are highly homologous proteins, but their blocking affinities on CNG channels are different: PsTx blocks both the olfactory and retinal channels with ∼15–30-fold higher affinity than Pdc. To gain further insights into their structure and function, the crystal structures of PsTx, Pdc and Zn{sup 2+}-bound Pdc were determined. The structures revealed that most of the amino-acid-residue differences between PsTx and Pdc are located around the concave surface formed between the PR-1 domain and the CRD, suggesting that the concave surface is functionally important for CNG-channel binding and inhibition. A structural comparison in the presence and absence of Zn{sup 2+} ion demonstrated that the concave surface can open and close owing to movement of the CRD upon Zn{sup 2+} binding. The data suggest that PsTx and Pdc occlude the pore entrance and that the dynamic motion of the concave surface facilitates interaction with the CNG channels.

  11. GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J.; Sun, X.; Alian, A.; Heyns, M.; Afanas'ev, V. V.

    2011-04-01

    The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

  12. WBG Gate Drivers for Power Modules

    Broader source: Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  13. Optical gating of perylene bisimide fluorescence usingdithienylcyclop...

    Office of Scientific and Technical Information (OSTI)

    The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that ...

  14. Women @ Energy: Dianne Gates-Anderson

    Broader source: Energy.gov [DOE]

    "I loved chemistry from my very first chemistry course in the tenth grade. Of the sciences, I found chemistry the most fascinating because you can use the principles of chemistry to explain so much about everything around you."

  15. Electrochemical Cell Design With A Hollow Gate

    DOE Patents [OSTI]

    Romero, Antonio; Oweis, Salah; Chagnon, Guy; Staniewicz, Robert; Briscoe, Douglas

    2000-02-01

    An electrochemical cell having a spiral winding around a central core, wherein the central core is provided with longitudinal grooves on its outer surface to facilitate electrolyte filing and accommodate overpressure. The core itself improves dissipation of heat generated along the center of the cell, and the hollow core design allows the cell core to have a larger radius, permitting the "jelly roll" winding to begin at a larger radius and thereby facilitate the initial turns of the winding by decreasing the amount of bending required of the electrode laminate at the beginning of the winding operation. The hollow core also provides mechanical support end-to-end. A pair of washers are used at each end of the cell to sandwich current collection tabs in a manner that improves electrical and thermal conductivity while also providing structural integrity.

  16. Stage-Gate Innovation Management Guidelines

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... num, Chem ca s, Forest Products, G ass, Meta -cast ng, M ... pract ces, Industr Assessment Centers, emerging ... and that a more open, creative set of rules is ...

  17. GATE: Energy Efficient Vehicles for Sustainable Mobility

    Broader source: Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  18. EA-1070: Revised Finding of No Significant Impact

    Broader source: Energy.gov [DOE]

    Natural Fluctuation of Water Level in Par Pond and Reduced Water Flow in Steel Creek below L Lake at the Savannah River Site

  19. Reconnecting fragmented sturgeon populations in North American rivers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jager, Yetta; Forsythe, Patrick S.; McLaughlin, Robert L.; Joseph J. Cech, Jr.; Parsley, Michael; Elliott, Robert F.; Pracheil, Brenda M.

    2016-02-24

    The majority of large North American rivers are fragmented by dams that interrupt migrations of wide-ranging fishes like sturgeons. Reconnecting habitat is viewed as an important means of protecting sturgeon species in U.S. rivers because these species have lost between 5% and 60% of their historical ranges. Unfortunately, facilities designed to pass other fishes have rarely worked well for sturgeons. The most successful passage facilities were sized appropriately for sturgeons and accommodated bottom-oriented species. For upstream passage, facilities with large entrances, full-depth guidance systems, large lifts, or wide fishways without obstructions or tight turns worked well. However, facilitating upstream migrationmore » is only half the battle. Broader recovery for linked sturgeon populations requires safe round-trip passage involving multiple dams. The most successful downstream passage facilities included nature-like fishways, large canal bypasses, and bottom-draw sluice gates. We outline an adaptive approach to implementing passage that begins with temporary programs and structures and monitors success both at the scale of individual fish at individual dams and the scale of metapopulations in a river basin. The challenge will be to learn from past efforts and reconnect North American sturgeon populations in a way that promotes range expansion and facilitates population recovery.« less

  20. Women @ Energy: Dianne Gates-Anderson | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    students to consider technical careers. 1) What inspired you to work in STEM? I loved chemistry from my very first chemistry course in the tenth grade. Of the sciences, I found...

  1. GATE Center of Excellence in Lightweight Materials and Manufacturing Technologies

    Broader source: Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  2. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hamburg (Germany); Overseas Advanced Education and Research Program from the Ministry of Education, Culture, Sports, Science, and Technology of Japan; Creative Research...

  3. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    University, Japan); B.S. Mun (Hanyang University, Korea, and ALS); M. Rossi, and Z. Hussain (ALS); P.N. Ross Jr. (Berkeley Lab); C.S. Fadley (University of California at...

  4. 2006-2011 GATE program at the Ohio State University

    Broader source: Energy.gov [DOE]

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  5. Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Clinton Hamilton Hardin Franklin Cedar Benton Buchanan Jasper Tama Story Cerro Gordo Grundy Jones Black Hawk Marshall Linn Butler Scott Washington Mahaska Iowa Floyd Winnebago ...

  6. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR

    Broader source: Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  7. The University of Tennessee's GATE Center for Hybrid Systems

    Broader source: Energy.gov [DOE]

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  8. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    hybrids - electric and hybrid vehicle configurations - vehicle modeling (Autonomie) - fuel cells - hardwaresoftwarecomponent in loop - power electronics - combustion -...

  9. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers...

  10. GATE Center of Excellence at UAB in Lightweight Materials for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    09 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. ti10vaidya...

  11. GATE Center of Excellence at UAB in Lightweight Materials for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    11 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation ti012vaidya2011o...

  12. Generic Issue 87: Flexible wedge gate valve test program

    SciTech Connect (OSTI)

    Steele, R. Jr.; DeWall, K.G.; Watkins, J.C. )

    1991-01-01

    Qualification and flow isolation tests were conducted to analyze the ability of selected boiling water reactor process valves to perform their containment isolation functions at high energy pipe break conditions and other more normal flow conditions. Numerous parameters were measured to assess valve and motor-operator performance at various valve loadings and to assess industry practices for predicting valve and motor operator requirements. The valves tested were representative of those used in reactor water cleanup systems in boiling water reactors and those used in boiling water reactor high-pressure coolant injection (HPCI) steam lines. These tests will provide further information for the US Nuclear Regulatory Commission Generic Issue-87, Failure of the HPCI Steam Line Without Isolation,'' and Generic Letter 89--10, Safety-related Motor Operated Valve Testing and Surveillance.'' 6 refs., 54 figs., 4 tabs.

  13. Isolated Photosystem I Reaction Centers on a Functionalized Gated...

    Office of Scientific and Technical Information (OSTI)

    The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic ...

  14. GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  15. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    transistors (about 4,000 per person) are produced worldwide as part of the integrated circuits that drive information technology. Each of these transistors contains an...

  16. Method for using polarization gating to measure a scattering sample

    DOE Patents [OSTI]

    Baba, Justin S.

    2015-08-04

    Described herein are systems, devices, and methods facilitating optical characterization of scattering samples. A polarized optical beam can be directed to pass through a sample to be tested. The optical beam exiting the sample can then be analyzed to determine its degree of polarization, from which other properties of the sample can be determined. In some cases, an apparatus can include a source of an optical beam, an input polarizer, a sample, an output polarizer, and a photodetector. In some cases, a signal from a photodetector can be processed through attenuation, variable offset, and variable gain.

  17. Gating of Permanent Molds for Aluminum Casting (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    ... Authors: David Schwam ; John F. Wallace ; Tom Engle ; Qingming Chang Publication Date: 2004-01-01 OSTI Identifier: 840927 Report Number(s): ID13983 TRN: US200707%%141 DOE Contract ...

  18. Gating of Permanent Molds for ALuminum Casting (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    mold castings. Authors: David Schwam ; John F. Wallace ; Tom Engle ; Qingming Chang Publication Date: 2004-03-30 OSTI Identifier: 822451 DOE Contract Number: ...

  19. Determination of prospective displacement-based gate threshold...

    Office of Scientific and Technical Information (OSTI)

    R.; Beddar, S. Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, Texas 77030 (United States) 62 RADIOLOGY AND NUCLEAR MEDICINE;...

  20. Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    particularly eutrophication of water bodies from excess nitrogen or phosphorus. Increased fertilizer runoff is a concern for harvesting corn stover for ethanol production. ...

  1. Ultrafast terahertz gating of the polarization and giant nonlinear...

    Office of Scientific and Technical Information (OSTI)

    Additional Journal Information: Journal Volume: 27; Journal Issue: 41; Journal ID: ISSN 0935-9648 Publisher: Wiley Research Org: Argonne National Lab. (ANL), Argonne, IL (United ...

  2. Chi-Nu "Gate Review" (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Authors: White, Morgan C. 1 ; Haight, Robert C. 1 ; Perdue, Brent A. 1 ; Wu, Ching-Yen 1 ; Talou, Patrick 1 ; Taddeucci, Terry N. 1 ; Neudecker, Denise 1 + Show ...

  3. Gate-tunable exchange coupling between cobalt clusters on graphene...

    Office of Scientific and Technical Information (OSTI)

    MLA APA Chicago Bibtex Export Metadata Endnote Excel CSV XML Send to Email Send to Email Email address: Content: Close Send Cite: MLA Format Close Cite: APA Format ...

  4. Direct Injection Compression Ignition Diesel Automotive Technology Education GATE Program

    SciTech Connect (OSTI)

    Anderson, Carl L

    2006-09-25

    The underlying goal of this prqject was to provide multi-disciplinary engineering training for graduate students in the area of internal combustion engines, specifically in direct injection compression ignition engines. The program was designed to educate highly qualified engineers and scientists that will seek to overcome teclmological barriers preventing the development and production of cost-effective high-efficiency vehicles for the U.S. market. Fu1iher, these highly qualified engineers and scientists will foster an educational process to train a future workforce of automotive engineering professionals who are knowledgeable about and have experience in developing and commercializing critical advanced automotive teclmologies. Eight objectives were defmed to accomplish this goal: 1. Develop an interdisciplinary internal co1nbustion engine curriculum emphasizing direct injected combustion ignited diesel engines. 2. Encourage and promote interdisciplinary interaction of the faculty. 3. Offer a Ph.D. degree in internal combustion engines based upon an interdisciplinary cuniculum. 4. Promote strong interaction with indusuy, develop a sense of responsibility with industry and pursue a self sustaining program. 5. Establish collaborative arrangements and network universities active in internal combustion engine study. 6. Further Enhance a First Class educational facility. 7. Establish 'off-campus' M.S. and Ph.D. engine programs of study at various indusuial sites. 8. Extend and Enhance the Graduate Experience.

  5. Gating of Permanent Molds for ALuminum Casting (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    Research Org: Case Western Reserve University Sponsoring Org: USDOE Office of Industrial Technologies (OIT) (EE-20); Country of Publication: United States Language: English ...

  6. Optimization efforts in gated x-ray intensifiers (Conference...

    Office of Scientific and Technical Information (OSTI)

    Higher resolution is achieved by coupling increased extraction voltage with less inter-particle diffusion of fluorescent and phosphorescent photons. The aluminum overcoat serves to ...

  7. Measuring ultrashort pulses using frequency-resolved optical gating

    SciTech Connect (OSTI)

    Trebino, R.

    1993-12-01

    The purpose of this program is the development of techniques for the measurement of ultrafast events important in gas-phase combustion chemistry. Specifically, goals of this program include the development of fundamental concepts and spectroscopic techniques that will augment the information currently available with ultrafast laser techniques. Of equal importance is the development of technology for ultrafast spectroscopy. For example, methods for the production and measurement of ultrashort pulses at wavelengths important for these studies is an important goal. Because the specific vibrational motion excited in a molecule depends sensitively on the intensity, I(t), and the phase, {psi}(t), of the ultrashort pulse used to excite the motion, it is critical to measure both of these quantities for an individual pulse. Unfortunately, this has remained an unsolved problem for many years. Fortunately, this year, the authors present a technique that achieves this goal.

  8. High Temperature, High Voltage Fully Integrated Gate Driver Circuit

    Broader source: Energy.gov [DOE]

    2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

  9. High Temperature, High Voltage Fully Integrated Gate Driver Circuit

    Broader source: Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  10. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advanced Education and Research Program from the Ministry of Education, Culture, Sports, Science, and Technology of Japan; Creative Research Initiatives of MOSTKOSEF...

  11. The University of Tennessee's GATE Center for Hybrid Systems

    Broader source: Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  12. Gating of Permanent Molds for Aluminum Casting (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    ... In order for a runner extension to operate efficiently, it must have a small squared cross-section. If it is tapered, the first metal to enter the first metal to enter the system ...

  13. Determination of prospective displacement-based gate threshold...

    Office of Scientific and Technical Information (OSTI)

    Author Affiliations Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, Texas 77030 (United States) Publication Date: 2007-11-15 OSTI...

  14. Albany Center map_rev36-10

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bro adw ay Stre et Lib ert y Str ee t Queen Avenue N S1 S2 S3 Locked Gate Locked Gate Locked Gate Locked Gate Locked Gate Locked Gate Walk Gate (locked) Walk Gate (locked) Walk...

  15. MHK Projects/Ijsselmeer barrage at Den Oever NL | Open Energy...

    Open Energy Info (EERE)

    Project Phase Phase 3 Project Details In 2005, a full scale 2.8m diameter, 35 kW prototype device (Tocardo Aqua 2800) was successfully tested in the exhaust sluices of the...

  16. Slide 1

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Details - PWM options (Microcontroller, FPGA) - High side gate control - HT MESFET ... FPGAEEPROM PWM JFET Gate Drive JFET Gate Drive JFET Gate Drive JFET Gate Drive H Bridge ...

  17. EA-1999: Proposal to Permit 750 Acres and New Training Operations...

    Energy Savers [EERE]

    has requested permitting two tracts of land, one near B-Area and one west of L-Lake and north of South Carolina Route 125, to establish facilities for military training purposes....

  18. CX-002205: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    686-G Steel Creek Dam (L-Lake) InspectionCX(s) Applied: B1.3Date: 04/16/2010Location(s): Aiken, South CarolinaOffice(s): Environmental Management, Savannah River Operations Office

  19. Safety equipment list for 241-C-106 waste retrieval, Project W-320: Revision 1

    SciTech Connect (OSTI)

    Conner, J.C.

    1994-11-15

    The goals of the C-106 sluicing operation are: (1) to stabilize the tank by reducing the heat load in the tank to less than 42 MJ/hr (40,000 Btu/hour), and (2) to initiate demonstration of single-shell tank (SST) retrieval technology. The purpose of this supporting document (SD) is as follows: (1) to provide safety classifications for items (systems, structures, equipment, components, or parts) for the waste retrieval sluicing system (WRSS), and (2) to document and methodology used to develop safety classifications. Appropriate references are made with regard to use of existing systems, structures, equipments, components, and parts for C-106 single-shell transfer tank located in the C Tank Farm, and 241-AY-102 (AY-102) double shell receiver tanks (DST) located in the Aging Waste Facility (AWF). The Waste Retrieval Sluicing System consists of two transfer lines that would connect the two tanks, one to carry the sluiced waste slurry to AY-102, and the other to return the supernatant liquid to C-106. The supernatant, or alternate fluid, will be used to mobilize waste in C-106 for the sluicing process. The equipment necessary for the WRSS include pumps in each tank, sluicers to direct the supernatant stream in C-106, a slurry distributor in AY-102, HVAC for C-106, instrumentation and control devices, and other existing components as required.

  20. Microsoft Word - Class_1_PMN_New_Gate_East_Fence_Line_09_09_15...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Kieling , Chief Hazardous Waste Bureau New Mexico Environment Department 2905 Rodeo Park Drive East, Building 1 Santa Fe, New Mexico 87505-6303 SEP 1 5 2015 Subject: Class 1 Permit...

  1. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    Broader source: Energy.gov [DOE]

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  2. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    Broader source: Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  3. Structural basis of GDP release and gating in G protein coupled Fe[superscript 2+] transport

    SciTech Connect (OSTI)

    Guilfoyle, Amy; Maher, Megan J.; Rapp, Mikaela; Clarke, Ronald; Harrop, Stephen; Jormakka, Mika

    2009-09-29

    G proteins are key molecular switches in the regulation of membrane protein function and signal transduction. The prokaryotic membrane protein FeoB is involved in G protein coupled Fe{sup 2+} transport, and is unique in that the G protein is directly tethered to the membrane domain. Here, we report the structure of the soluble domain of FeoB, including the G protein domain, and its assembly into an unexpected trimer. Comparisons between nucleotide free and liganded structures reveal the closed and open state of a central cytoplasmic pore, respectively. In addition, these data provide the first observation of a conformational switch in the nucleotide-binding G5 motif, defining the structural basis for GDP release. From these results, structural parallels are drawn to eukaryotic G protein coupled membrane processes.

  4. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    11 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation PDF icon ti007erickson2011o

  5. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    09 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. PDF icon ti02erickson

  6. Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Location: Hall A 9:05 AM Keynote Presentation by Frederick W. Smith, FedEx Corporation, ... Lee Scott, BDT Capital Partners, Chairman; Walmart, Former CEO Frederick W. Smith, FedEx ...

  7. Fast Out of the Gate: How Developing Asian Countries can Prepare...

    Open Energy Info (EERE)

    from the LEDS Global Partnership. When to Use This Tool While building a low emission strategy for your country's transportation system, this tool is most useful during these...

  8. Range-gated field disturbance sensor with range-sensitivity compensation

    DOE Patents [OSTI]

    McEwan, T.E.

    1996-05-28

    A field disturbance sensor operates with relatively low power, provides an adjustable operating range, is not hypersensitive at close range, allows co-location of multiple sensors, and is inexpensive to manufacture. The sensor includes a transmitter that transmits a sequence of transmitted bursts of electromagnetic energy. The transmitter frequency is modulated at an intermediate frequency. The sequence of bursts has a burst repetition rate, and each burst has a burst width and comprises a number of cycles at a transmitter frequency. The sensor includes a receiver which receives electromagnetic energy at the transmitter frequency, and includes a mixer which mixes a transmitted burst with reflections of the same transmitted burst to produce an intermediate frequency signal. Circuitry, responsive to the intermediate frequency signal indicates disturbances in the sensor field. Because the mixer mixes the transmitted burst with reflections of the transmitted burst, the burst width defines the sensor range. The burst repetition rate is randomly or pseudorandomly modulated so that bursts in the sequence of bursts have a phase which varies. 8 figs.

  9. Range-gated field disturbance sensor with range-sensitivity compensation

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1996-01-01

    A field disturbance sensor operates with relatively low power, provides an adjustable operating range, is not hypersensitive at close range, allows co-location of multiple sensors, and is inexpensive to manufacture. The sensor includes a transmitter that transmits a sequence of transmitted bursts of electromagnetic energy. The transmitter frequency is modulated at an intermediate frequency. The sequence of bursts has a burst repetition rate, and each burst has a burst width and comprises a number of cycles at a transmitter frequency. The sensor includes a receiver which receives electromagnetic energy at the transmitter frequency, and includes a mixer which mixes a transmitted burst with reflections of the same transmitted burst to produce an intermediate frequency signal. Circuitry, responsive to the intermediate frequency signal indicates disturbances in the sensor field. Because the mixer mixes the transmitted burst with reflections of the transmitted burst, the burst width defines the sensor range. The burst repetition rate is randomly or pseudorandomly modulated so that bursts in the sequence of bursts have a phase which varies.

  10. Low tipping at the gate: Solid waste management in St. Louis

    SciTech Connect (OSTI)

    Sager, K.A.

    1997-10-01

    With the largest solid waste management district in the state of Missouri, St. Louis offers low tipping fees and plenty of capacity for waste and recyclables at virtually no cost to the city`s nearly 400,000 residents. The city of St. Louis has its own refuse collection and is doing curbside pickup on a pilot basis for about 3,500 homes, says Lee Fox, president of the Missouri Recycling Association (St. Louis). Also for waste management, there is blue-bag drop-off and a series of drop-off sites at different fire stations throughout the city. The central-west side has once-a-week curbside service. There are 92 separate municipalities and 35% of the area is unincorporated. It really depends on where one lives and the service. St. Louis has twice-a-week trash service, with a once-a-week curbside and yard waste pickup. The city collects all residential trash, which is financed by the city`s general revenue fund, with no direct user fees to residents. Solid waste is shipped to an Illinois landfill owned by Allied Waste Industries, Inc. (Scottsdale, Ariz.). With no current citywide curbside recycling program, private recyclers provide collection to a small percentage of homes throughout the metropolitan area.

  11. Holographic Spectroscopy for Rapid Electron Bunch Analysis: Development of an Instrument with THZ Resolved Optical Gating

    SciTech Connect (OSTI)

    Sievers, Albert

    2011-10-28

    The main thrust of our project was to apply the concepts of holographic spectroscopy, developed earlier in the visible and near IR spectral regions for satellite mapping, to the THz region in order to measure the spectral signature of the coherent radiation emanating from a relativistic electron bunch to obtain the bunch length itself. There were four major discoveries. (1) In the course of this ground-breaking work we developed and built the first static THz interferometer suitable for the realization of such a holographic Fourier transform spectrometer. Experimental tests and analysis of the observed results have provided the necessary foundation for future development of THz detector arrays optimized for spectroscopic applications. (2) Since such detectors do not exist at the present time our next effort was to find an alternative approach. We explored the electro-optic (EO) detection of the THz pulse using the short pulse of a visible diode laser synchronized to the bunch with the long-term goal aimed at single bunch measurement capability. The main hurdle was found to be the parasitic scattering of the diode radiation in the EO medium. By using the optical Fourier transform of the THz interference pattern the effects of this background were suppressed enough to obtain the spectrum using multiple shot acquisition. During our experiments at the FLASH facility at DESY we determined that for single bunch measurement capability the diode laser has to be able to produce sub 100 ps pulses with peak power of at least 1 W. Since these parameters are quite feasible at the current stage of diode laser science this combination of techniques can be used for single shot measurement of a short electron bunch. (3) In carrying out the above effort a simpler measurement possibility was uncovered involving the visible/nearIR pulse of incoherent radiation produced by the same bunch. This observation made possible the cross-correlation of the THz coherent and visible incoherent radiation and provided the first step in the development of a self contained THz HFTS for rapid electron bunch shape analysis. Our first experiments confirmed the idea and as a side result made possible a completely new bunch length monitor eliminating any need for an external laser since only radiation produced by the bunch itself is involved. A more advanced instrument was designed to use the incoherent visible radiation pulse from the synchrotron source for sampling the THz interference pattern. It has been built and the first tests are to be conducted in April 2011 at the Jefferson FEL facility.

  12. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

    SciTech Connect (OSTI)

    Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.; Ghidini, G.

    1998-12-01

    Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices.

  13. Final Technical Report- Back-gate Field Emission-based Cathode RF Electron Gun

    SciTech Connect (OSTI)

    McGuire, Gary; Martin, Allen; Noonan, John

    2010-10-30

    The objective was to complete the design of an electron gun which utilizes a radio frequency (RF) power source to apply a voltage to a field emission (FE) cathode, a so called cold cathode, in order to produce an electron beam. The concept of the RF electron gun was originally conceived at Argonne National Laboratory but never reduced to practice. The research allowed the completion of the design based upon the integration of the FE electron source. Compared to other electron guns, the RF gun is very compact, less than one third the size of other comparable guns, and produces a high energy (to several MeV), high quality, high power electron beam with a long focal length with high repetition rates. The resultant electron gun may be used in welding, materials processing, analytical equipment and waste treatment.

  14. Three dimensional time-gated tracking of non-blinking quantum...

    Office of Scientific and Technical Information (OSTI)

    Los Alamos National Lab. (LANL), Los Alamos, NM (United States) Univ. of New Mexico, Albuquerque, NM (United States) U.S. Naval Research Lab., Washington, D.C. (United States) ...

  15. Survey of Field Programmable Gate Array Design Guides and Experience Relevant to Nuclear Power Plant Applications

    SciTech Connect (OSTI)

    Bobrek, Miljko; Bouldin, Don; Holcomb, David Eugene; Killough, Stephen M; Smith, Stephen Fulton; Ward, Christina D

    2007-09-01

    From a safety perspective, it is difficult to assess the correctness of FPGA devices without extensive documentation, tools, and review procedures. NUREG/CR-6463, "Review Guidelines on Software Languages for Use in Nuclear Power Plant Safety Systems," provides guidance to the Nuclear Regulatory Commission (NRC) on auditing of programs for safety systems written in ten high-level languages. A uniform framework for the formulation and discussion of language-specific programming guidelines was employed. Comparable guidelines based on a similar framework are needed for FPGA-based systems. The first task involves evaluation of regulatory experience gained by other countries and other agencies, and those captured in existing standards, to identify regulatory approaches that can be adopted by NRC. If existing regulations do not provide a sufficient regulatory basis for adopting relevant regulatory approaches that are uncovered, ORNL will identify the gaps. Information for this report was obtained through publicly available sources such as published papers and presentations. No proprietary information is represented.

  16. GATE Center of Excellence at UAB in Lightweight Materials for Automotive

    Broader source: Energy.gov (indexed) [DOE]

    Applications | Department of Energy 11 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation PDF icon ti012_vaidya_2011_o

  17. GATE Center of Excellence at UAB in Lightweight Materials for Automotive

    Broader source: Energy.gov (indexed) [DOE]

    Applications | Department of Energy 09 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. PDF icon ti_10_vaidya

  18. Tank 241-C-106 in-tank imaging system operational test report

    SciTech Connect (OSTI)

    Pedersen, L.T.

    1998-07-07

    This document presents the results of operational testing of the 241-C-106 In-Tank Video Camera Imaging System. This imaging system was installed as a component of Project W-320 to monitor sluicing and waste retrieval activities in Tank 241-C-106.

  19. Old hydrofracture facility tanks contents removal action operations plan at the Oak Ridge National Laboratory, Oak Ridge, Tennessee. Volume 1: Text. Volume 2: Checklists and work instructions

    SciTech Connect (OSTI)

    1998-05-01

    This Operations Plan summarizes the operating activities for transferring contents of five low-level (radioactive) liquid waste storage tanks associated with the Old Hydrofracture Facility (OHF) to the Melton Valley Storage Tanks (MVST) for secure storage. The transfer will be accomplished through sluicing and pumping operations which are designed to pump the slurry in a closed circuit system using a sluicing nozzle to resuspend the sludge. Once resuspended, the slurry will be transferred to the MVST. The report documenting the material transfer will be prepared after transfer of the tank materials has been completed. The OBF tanks contain approximately 52,600 gal (199,000 L) of low-level radioactive waste consisting of both sludge and supernatant. This material is residual from the now-abandoned grout injection operations conducted from 1964 to 1980. Total curie content is approximately 30,000 Ci. A sluicing and pumping system has been specifically designed for the OHF tanks contents transfer operations. This system is remotely operated and incorporates a sluicing nozzle and arm (Borehole Miner) originally designed for use in the mining industry. The Borehole Miner is an in-tank device designed to deliver a high pressure jet spray via an extendable nozzle. In addition to removing the waste from the tanks, the use of this equipment will demonstrate applicability for additional underground storage tank cleaning throughout the U.S. Department of Energy complex. Additional components of the complete sluicing and pumping system consist of a high pressure pumping system for transfer to the MVST, a low pressure pumping system for transfer to the recycle tank, a ventilation system for providing negative pressure on tanks, and instrumentation and control systems for remote operation and monitoring.

  20. GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Broader source: Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  1. Penn State DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems

    Broader source: Energy.gov [DOE]

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  2. Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated with Fertilizer used for Corn, Soybean, and Stover Production

    Broader source: Energy.gov [DOE]

    Fertilizer use can cause environmental problems, particularly eutrophication of water bodies from excess nitrogen or phosphorus. Increased fertilizer runoff is a concern for harvesting corn stover for ethanol production.

  3. Ultrafast terahertz gating of the polarization and giant nonlinear optical response in BiFeO3 thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chen, Frank; Goodfellow, John; Liu, Shi; Grinberg, Ilya; Hoffmann, Matthias; Damodaran, Anoop R.; Zhu, Yi; Zalden, Peter; Zhang, Xiaohang; Takeuchi, Ichiro; et al

    2015-09-21

    Terahertz pulses are applied as an all-optical bias to ferroelectric thin-film BiFeO3 while monitoring the time-dependent ferroelectric polarization through its nonlinear optical response. Modulations in the intensity of the second harmonic light generated by the film correspond to on–off ratios of 220× gateable on femtosecond timescales. Lastly, polarization modulations comparable to the built-in static polarization are observed.

  4. Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor

    SciTech Connect (OSTI)

    Yan, S. A.; Tang, M. H. Xiao, Y. G.; Zhang, W. L.; Ding, H.; Chen, J. W.; Zhou, Y. C.; Xiong, Y.; Li, Z.; Zhao, W.; Guo, H. X.

    2014-05-28

    P-type channel metal-ferroelectric-insulator-silicon field-effect transistors (FETs) with a 300?nm thick SrBi{sub 2}Ta{sub 2}O{sub 9} ferroelectric film and a 10?nm thick HfTaO layer on silicon substrate were fabricated and characterized. The prepared FeFETs were then subjected to {sup 60}Co gamma irradiation in steps of three dose levels. Irradiation-induced degradation on electrical characteristics of the fabricated FeFETs was observed after 1 week annealing at room temperature. The possible irradiation-induced degradation mechanisms were discussed and simulated. All the irradiation experiment results indicated that the stability and reliability of the fabricated FeFETs for nonvolatile memory applications will become uncontrollable under strong irradiation dose and/or long irradiation time.

  5. University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines

    Broader source: Energy.gov [DOE]

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  6. University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines

    Broader source: Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  7. KTM Experimental Complex Project Status

    SciTech Connect (OSTI)

    Tazhibayeva, I.L.; Azizov, E.A.; Krylov, V.A.; Shkolnik, V.S.; Velikhov, E.P.; Obysov, N.A.; Tukhvatulin, Sh.T.; Tikhomirov, L.N.; Shestakov, V.P.; Filatov, O.G

    2005-04-15

    A review of KTM experimental complex project status, which is aimed the creation of a Kazakhstani spherical tokamak for study and tests materials and components of future fusion reactors. Revised basic parameters of the KTM facility and ground of the changes taking into account new plasma core geometry, new design of vacuum chamber and modified magnetic system, transport sluice and movable divertor devices, and additional RF-heating system are presented here.

  8. TWC Committee Meeting - Transcribed Flipchart Notes

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    September 11, 2013 System Plan Assumptions * Consider a non-TPA compliant scenario (?) * Need info from Sec → Info to public/community late Oct (guess, only) Next steps  * Wait for information, anticipate working on advice at Nov TWC meeting Page 1 TWC Committee Call Topics Sept 17 * 3 month work plan * October meeting topics table (Oct 9) Feedback on Tour * Tours at points of progress, if possible * Great * Sluicing great to see! * Regular tour, if possible Page 2

  9. Acceptance test report for the Tank 241-C-106 in-tank imaging system

    SciTech Connect (OSTI)

    Pedersen, L.T.

    1998-05-22

    This document presents the results of Acceptance Testing of the 241-C-106 in-tank video camera imaging system. The purpose of this imaging system is to monitor the Project W-320 sluicing of Tank 241-C-106. The objective of acceptance testing of the 241-C-106 video camera system was to verify that all equipment and components function in accordance with procurement specification requirements and original equipment manufacturer`s (OEM) specifications. This document reports the results of the testing.

  10. Albany Center map_rev36-10

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bro adw ay Stre et Lib ert y Str ee t Queen Avenue N S1 S2 S3 Locked Gate Locked Gate Locked Gate Locked Gate Locked Gate Locked Gate Walk Gate (locked) Walk Gate (locked) Walk Gate (locked) 0 200 Scale in feet 1 40 33 31 30 29 28 Trailer 2 Trailer 1 27 26 25 23 24 22 20 21 19 18 36 35 37 38 39 34 17 14,15,16 13 7 8 9 10 11 6 12 5 4 2 32 VACANT FEDERAL PROPERTY S4 Gas Sheds Covered Dock Main Gate Security Guard Emergency Gate (Automatic) Locked Gate Locked Gate Walk Gate (locked) Scrap Metal

  11. EM-50 Tanks Focus Area retrieval process development and enhancements. FY97 technology development summary report

    SciTech Connect (OSTI)

    Rinker, M.W.; Bamberger, J.A.; Alberts, D.G.

    1997-09-01

    The Retrieval Process Development and Enhancements (RPD and E) activities are part of the US Department of Energy (DOE) EM-50 Tanks Focus Area, Retrieval and Closure program. The purpose of RPD and E is to understand retrieval processes, including emerging and existing technologies, and to gather data on these processes, so that end users have requisite technical bases to make retrieval decisions. Technologies addressed during FY97 include enhancements to sluicing, the use of pulsed air to assist mixing, mixer pumps, innovative mixing techniques, confined sluicing retrieval end effectors, borehole mining, light weight scarification, and testing of Russian-developed retrieval equipment. Furthermore, the Retrieval Analysis Tool was initiated to link retrieval processes with tank waste farms and tank geometric to assist end users by providing a consolidation of data and technical information that can be easily assessed. The main technical accomplishments are summarized under the following headings: Oak Ridge site-gunite and associated tanks treatability study; pulsed air mixing; Oak Ridge site-Old Hydrofracture Facility; hydraulic testbed relocation; cooling coil cleaning end effector; light weight scarifier; innovative tank mixing; advanced design mixer pump; enhanced sluicing; Russian retrieval equipment testing; retrieval data analysis and correlation; simulant development; and retrieval analysis tool (RAT).

  12. HANFORD TANK CLEANUP UPDATE MAY 2009 [VISIT US AT WWW.WRPSTOC.COM OR WWW.HANFORD.GOV/ORP/ FOR MORE INFORMATION

    SciTech Connect (OSTI)

    HOLLOWAY JN

    2009-05-03

    Retrieval of waste from single-shell tank C-110 resumed in January making it the first waste retrieval operation for WRPS since taking over Hanford's Tank Operations Contract last October. Now, with approximately 90 percent of the waste removed, WRPS believes that modified sluicing has reached the limits of the technology to remove any further waste and is preparing documentation for use in decision making about any future retrieval actions. Tank C-110 is located in C Fann near the center of the Hanford Site. It is a 530,000 gallon tank, built in 1946, and held approximately 126,000 gallons of sludge and other radioactive and chemical waste materials when retrieval resumed. Modified sluicing technology uses liquid waste from a nearby double-shell tank to break up, dissolve and mobilize the solid material so it can be pumped. Because of the variety of waste fon11S, sluicing is often not able to remove all of the waste. The remaining waste will next be sampled for analysis, and results will be used to guide decisions regarding future actions. Work is moving rapidly in preparation to retrieve waste from a second single-shell tank this summer and transfer it to safer double-shell tank storage. Construction activities necessary to retrieve waste from Tank C-104, a 530,000 gallon tank built in 1943, are approximately 60 percent complete as WRPS maintains its focus on reducing the risk posed by Hanford's aging single-shell waste tanks. C-104 is one of Hanford's oldest radioactive and chemical waste storage tanks, containing approximately 263,000 gallons of wet sludge with a top layer that is dry and powdery. This will be the largest sludge volume retrieval ever attempted using modified sluicing technology. Modified sluicing uses high pressure water or liquid radioactive waste sprayed from nozzles above the waste. The liquid dissolves and/or mobilizes the waste so it can be pumped. In addition to other challenges, tank C-104 contains a significant amount of plutonium and uranium. It also contains a host of contaminated legacy equipment so the entire process is being managed carefully to protect workers and the environment.

  13. Multiple DC, single AC converter with a switched DC transformer

    DOE Patents [OSTI]

    Donnelly, M.K.; Hammerstrom, D.J.

    1997-05-20

    The invention is an improvement of the PASC inverter, wherein the improvements include the reduction from two shorting gates per transformer to one shorting gate per transformer and replacement of active control of the shorting gate with passive control of the shorting gate. Further advantages are obtained through the use of anti-parallel gate sets. 14 figs.

  14. Multiple DC, single AC converter with a switched DC transformer

    DOE Patents [OSTI]

    Donnelly, Matthew K.; Hammerstrom, Donald J.

    1997-01-01

    The invention is an improvement of the PASC inverter, wherein the improvements include the reduction from two shorting gates per transformer to one shorting gate per transformer and replacement of active control of the shorting gate with passive control of the shorting gate. Further advantages are obtained through the use of anti-parallel gate sets.

  15. Evaluation of the NightCool Nocturnal Radiation Cooling Concept: Annual Performance Assessment in Scale Test Buildings Stage Gate 1B

    SciTech Connect (OSTI)

    Parker, Danny S.; Sherwin, John R.

    2008-03-01

    In this report, data is presented on the long-term comparative with all of NightCool system fully operational, with circulating fans when attic conditions are favorable for nocturnal cooling and with conventional air conditioning at other times. Data is included for a full year of the cooling season in Central Florida, which stretches from April to November of 2007.

  16. Vehicle Technologies Office Merit Review 2014: Penn State DOE Graduate GATE Program for In-Vehicle, High-Power Energy Storage Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Pennsylvania State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about Penn State DOE...

  17. Vehicle Technologies Office Merit Review 2015: Penn State DOE Graduate Automotive Technology Education (GATE) Program for In-Vehicle, High-Power Energy Storage Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Pennsylvania State University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about Penn State DOE...

  18. Optimizing Low Temperature Diesel Combustion (LTC-D) "FreedomCAR and Vehicle Technologies Program Solicitation for University Research and Graduate Automotice Technology Education (GATE) Centers of Excellence"

    SciTech Connect (OSTI)

    Rolf Reitz; P. Farrell; D. Foster; J. Ghandhi; C. Rutland; S. Sanders

    2009-07-31

    The engine industry is currently facing severe emissions mandates. Pollutant emissions from mobile sources are a major source of concern. For example, US EPA mandates require emissions of particulate and nitrogen oxides (NOx) from heavy-duty diesel engine exhaust to drop at least 90 percent between 1998 and 2010. Effective analysis of the combustion process is required to guide the selection of technologies for future development since exhaust after-treatment solutions are not currently available that can meet the required emission reduction goals. The goal of this project is to develop methods to optimize and control Low Temperature Combustion Diesel technologies (LTC-D) that offers the potential of nearly eliminating engine NOx and particulate emissions at reduced cost over traditional methods by controlling pollutant emissions in-cylinder. The work was divided into 5 Tasks, featuring experimental and modeling components: 1.) Fundamental understanding of LTC-D and advanced model development, 2.) Experimental investigation of LTC-D combustion control concepts, 3.) Application of detailed models for optimization of LTC-D combustion and emissions, 4.) Impact of heat transfer and spray impingement on LTC-D combustion, and 5.) Transient engine control with mixed-mode combustion. As described in the final report (December 2008), outcomes from the research included providing guidelines to the engine and energy industries for achieving optimal low temperature combustion operation through using advanced fuel injection strategies, and the potential to extend low temperature operation through manipulation of fuel characteristics. In addition, recommendations were made for improved combustion chamber geometries that are matched to injection sprays and that minimize wall fuel films. The role of fuel-air mixing, fuel characteristics, fuel spray/wall impingement and heat transfer on LTC-D engine control were revealed. Methods were proposed for transient engine operation during load and speed changes to extend LTC-D engine operating limits, power density and fuel economy. Low emissions engine design concepts were proposed and evaluated.

  19. A novel femtosecond-gated, high-resolution, frequency-shifted shearing interferometry technique for probing pre-plasma expansion in ultra-intense laser experiments

    SciTech Connect (OSTI)

    Feister, S. Orban, C.; Nees, J. A.; Morrison, J. T.; Frische, K. D.; Chowdhury, E. A.; Roquemore, W. M.

    2014-11-15

    Ultra-intense laser-matter interaction experiments (>10{sup 18} W/cm{sup 2}) with dense targets are highly sensitive to the effect of laser noise (in the form of pre-pulses) preceding the main ultra-intense pulse. These system-dependent pre-pulses in the nanosecond and/or picosecond regimes are often intense enough to modify the target significantly by ionizing and forming a plasma layer in front of the target before the arrival of the main pulse. Time resolved interferometry offers a robust way to characterize the expanding plasma during this period. We have developed a novel pump-probe interferometry system for an ultra-intense laser experiment that uses two short-pulse amplifiers synchronized by one ultra-fast seed oscillator to achieve 40-fs time resolution over hundreds of nanoseconds, using a variable delay line and other techniques. The first of these amplifiers acts as the pump and delivers maximal energy to the interaction region. The second amplifier is frequency shifted and then frequency doubled to generate the femtosecond probe pulse. After passing through the laser-target interaction region, the probe pulse is split and recombined in a laterally sheared Michelson interferometer. Importantly, the frequency shift in the probe allows strong plasma self-emission at the second harmonic of the pump to be filtered out, allowing plasma expansion near the critical surface and elsewhere to be clearly visible in the interferograms. To aid in the reconstruction of phase dependent imagery from fringe shifts, three separate 120 phase-shifted (temporally sheared) interferograms are acquired for each probe delay. Three-phase reconstructions of the electron densities are then inferred by Abel inversion. This interferometric system delivers precise measurements of pre-plasma expansion that can identify the condition of the target at the moment that the ultra-intense pulse arrives. Such measurements are indispensable for correlating laser pre-pulse measurements with instantaneous plasma profiles and for enabling realistic Particle-in-Cell simulations of the ultra-intense laser-matter interaction.

  20. C_Program FilesRightFaxRFaxGateINA001e2443-0f95-4c73-9ac5-402896144284.TIF

    Energy Savers [EERE]

  1. C_Program FilesRightFaxRFaxGateINA23326efa-6848-4e70-881e-87e980cbdc1a.TIF

    Energy Savers [EERE]

  2. C_Program FilesRightFaxRFaxGateINAa402975d-cd59-4ccc-928d-ecde174f0e37.TIF

    Energy Savers [EERE]

  3. Germanium-induced stabilization of a very high-k zirconia phase in ZrO{sub 2}/GeO{sub 2} gate stacks

    SciTech Connect (OSTI)

    Tsipas, P.; Volkos, S. N.; Sotiropoulos, A.; Galata, S. F.; Mavrou, G.; Tsoutsou, D.; Panayiotatos, Y.; Dimoulas, A.; Marchiori, C.; Fompeyrine, J.

    2008-08-25

    Electrical data on ZrO{sub 2}/GeO{sub 2} stacks prepared by atomic oxygen beam deposition on Ge at 225 deg. C reveal a relatively weak dependence of the stack equivalent oxide thickness upon the ZrO{sub 2} thickness. This trend points to a very high zirconia dielectric permittivity (k) value which is estimated to be around 44. This is indicative of zirconia crystallization into a tetragonal phase which is also supported by x-ray diffraction data. X-ray photoelectron spectroscopy analysis is in line with the assumption that due to a finite GeO{sub 2} decomposition, Ge is incorporated into the growing ZrO{sub 2}, thus, stabilizing the high-k tetragonal phase.

  4. Non destructive neutron diffraction measurements of cavities, inhomogeneities, and residual strain in bronzes of Ghiberti's relief from the Gates of Paradise

    SciTech Connect (OSTI)

    Festa, G.; Senesi, R.; Alessandroni, M.; Andreani, C.; Vitali, G.; Porcinai, S.; Giusti, A. M.; Materna, T.; Paradowska, A. M.

    2011-03-15

    Quantitative neutron studies of cultural heritage objects provide access to microscopic, mesoscopic, and macroscopic structures in a nondestructive manner. In this paper we present a neutron diffraction investigation of a Ghiberti Renaissance gilded bronze relief devoted to the measurement of cavities and inhomogeneities in the bulk of the sample, along with the bulk phase composition and residual strain distribution. The quantitative measurements allowed the determination of the re-melting parts extension, as well as improving current knowledge about the manufacturing process. The study provides significant and unique information to conservators and restorators about the history of the relief.

  5. Advanced Simulation Capability

    Office of Environmental Management (EM)

    4 Status Report The Advanced Simulation Capability for Environmental Management Initiative is funded by the U.S. Department of Energy Office of Environmental Management Responding to the Challenge 4 Capability Development 4 References 14 Appendix: FY14 Publications 15 and Presentations Contents Cover photo courtesy of Daniel Scott, Savannah River Ecology Laboratory. L-Lake is a 1,000-acre, man-made lake, created to disperse and cool water in L-Reactor when it was operating. Message from the

  6. Disrupting the (Energy) Status Quo: ARPA-E Helping the U.S. Face...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    What are the key facts? Bill Gates, Fred Smith and Lee Scott will serve as keynote ... Majumdar also announced that Bill Gates (Founder of Microsoft), Fred Smith (Chairman, ...

  7. Slide 1

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and lamination production * Turbine runner parts and wicket gates casting production * Testing casting coupons Wicket Gate Unit 2 Turbine Runner Crown Unit 3 Turbine Runner ...

  8. HYDROGEN AND FUEL CELL EDUCATION AT CALIFORNIA STATE UNIVERSITY...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence Hydrogen Education Curriculum Path at Michigan Technological University GATE Center for ...

  9. 2008 Network Open Season (NOS) NEPA Request

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Environmental Policy Act (NEPA) process and the preliminary engineering and design work (stage gate 1 of a 2-stage gated project approval process) for the following transmission...

  10. Campus Map

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Argonne Information Visitor Center TCS Conference Center APS Conference Center Bistro Freund Lodge Credit Union Entrance MAINNORTH GATE Entrance TRUCKEAST GATE Entrance WEST...

  11. Technical Feasibility Assessment of LED Roadway Lighting on the...

    Office of Scientific and Technical Information (OSTI)

    Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge Tuenge, Jason R. LED; induction; ceramic metal halide; plasma; roadway lighting; Golden Gate...

  12. TITLE AUTHORS SUBJECT SUBJECT RELATED DESCRIPTION PUBLISHER AVAILABILI...

    Office of Scientific and Technical Information (OSTI)

    Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge Tuenge Jason R LED induction ceramic metal halide plasma roadway lighting Golden Gate Bridge LED...

  13. Development of a waste dislodging and retrieval system for use in the Oak Ridge National Laboratory gunite tank

    SciTech Connect (OSTI)

    Randolph, J.D.; Lloyd, P.D.; Burks, B.L.

    1997-03-01

    As part of the Gunite And Associated Tanks (GAAT) Treatability Study the Oak Ridge National Laboratory (ORNL) has developed a tank waste retrieval system capable of removing wastes varying from liquids to thick sludges. This system is also capable of scarifying concrete walls and floors. The GAAT Treatability Study is being conducted by the Department of Energy Oak Ridge Environmental Restoration Program. Much of the technology developed for this project was cosponsored by the DOE Office of Science and Technology through the Tanks Focus Area (TFA) and the Robotics Technology Development Program. The waste dislodging and conveyance (WD&C) system was developed jointly by ORNL and participants from the TFA. The WD&C system is comprised of a four degree-of-freedom arm with back driveable motorized joints. a cutting and dislodging tool, a jet pump and hose management system for conveyance of wastes, confined sluicing end-effector, and a control system, and must be used in conjunction with a robotic arm or vehicle. Other papers have been submitted to this conference describing the development and operation of the arm and vehicle positioning systems. This paper will describe the development of the WD&C system and its application for dislodging and conveyance of ORNL sludges from the GAAT tanks. The confined sluicing end-effector relies on medium pressure water jets to dislodge waste that is then pumped by the jet pump through the conveyance system out of the tank. This paper will describe the results of cold testing of the integrated system. At the conference presentation there will also be results from the field deployment. ORNL has completed fabrication of the WD&C system for waste removal and is full-scale testing, including testing of the confined sluicing end-effector.

  14. W-320 Department of Health documentation

    SciTech Connect (OSTI)

    Bailey, J.W.

    1998-08-07

    The purpose of this document is to gather information required to show that Project W-320 is in compliance with Washington State Department of Health requirements as specified in Radioactive Air Emissions Notice of Construction Project W-320, Tank 241-C-106 Sluicing, DOE/RL-95-45. Specifically, that W-320 is in compliance with ASME N509-1989 (Nuclear Power Plant Air-Cleaning Units and Components) and ASME N5 10-1989 (Testing of Nuclear Air Treatment Systems) for the 296-C-006 exhaust system.

  15. Engineering study for ISSTRS design concept

    SciTech Connect (OSTI)

    Hertzel, J.S.

    1997-01-31

    Los Alamos Technical Associates, Inc., is pleased to transmit the attached Conceptual Design Package for the Initial Single Shell Tank Retrieval System (ISSTRS), 90% Conceptual Design Review. The package includes the following: (1) ISSTRS Trade Studies: (a) Retrieval Facility Cooling Requirements; (b) Equipment Re-usability between Project W-320 and Tanks 241-C-103 and 241-C-1 05; (c) Sluice Line Options; and (d) Options for the Location of Tanks AX-103 and A-1 02 HVAC Equipment; (2) Drawings; (3) Risk Management Plan; (4) 0850 Interface Control Document; (5) Requirements Traceability Report; and (6) Project Design Specification.

  16. Hanford Tanks Initiative fiscal year 1997 retrieval technology demonstrations

    SciTech Connect (OSTI)

    Berglin, E.J.

    1998-02-05

    The Hanford Tanks Initiative was established in 1996 to address a range of retrieval and closure issues associated with radioactive and hazardous waste stored in Hanford`s single shell tanks (SSTs). One of HTI`s retrieval goals is to ``Successfully demonstrate technology(s) that provide expanded capabilities beyond past practice sluicing and are extensible to retrieve waste from other SSTS.`` Specifically, HTI is to address ``Alternative technologies to past practice sluicing`` ... that can ... ``successfully remove the hard heel from a sluiced tank or to remove waste from a leaking SST`` (HTI Mission Analysis). During fiscal year 1997, the project contracted with seven commercial vendor teams to demonstrate retrieval technologies using waste simulants. These tests were conducted in two series: three integrated tests (IT) were completed in January 1997, and four more comprehensive Alternative Technology Retrieval Demonstrations (ARTD) were completed in July 1997. The goal of this testing was to address issues to minimize the risk, uncertainties, and ultimately the overall cost of removing waste from the SSTS. Retrieval technologies can be separated into three tracks based on how the tools would be deployed in the tank: globally (e.g., sluicing) or using vehicles or robotic manipulators. Accordingly, the HTI tests included an advanced sluicer (Track 1: global systems), two different vehicles (Track 2: vehicle based systems), and three unique manipulators (Track 3: arm-based systems), each deploying a wide range of dislodging tools and conveyance systems. Each industry team produced a system description as envisioned for actual retrieval and a list of issues that could prevent using the described system; defined the tests to resolve the issues; performed the test; and reported the results, lessons learned, and state of issue resolution. These test reports are cited in this document, listed in the reference section, and summarized in the appendices. This report analyzes the retrieval testing issues and describes what has been learned and issues that need further resolution. As such, it can serve as a guide to additional testing that must be performed before the systems are used in-tank. The major issues discussed are tank access, deployment, mining strategy, waste retrieval, liquid scavenging (liquid usage), maneuverability, positioning, static and dynamic performance, remote operations, reliability, availability, maintenance, tank safety, and cost.

  17. Vehicle Technologies Office: Graduate Automotive Technology Education

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (GATE) | Department of Energy Education & Workforce Development » Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) DOE established the Graduate Automotive Technology Education (GATE) Centers of Excellence to provide future generations of engineers and scientists with knowledge and skills in advanced automotive technologies. By funding curriculum development and expansion as well as

  18. Vehicle barrier

    DOE Patents [OSTI]

    Hirsh, Robert A. (Bethel Park, PA)

    1991-01-01

    A vehicle security barrier which can be conveniently placed across a gate opening as well as readily removed from the gate opening to allow for easy passage. The security barrier includes a barrier gate in the form of a cable/gate member in combination with laterally attached pipe sections fixed by way of the cable to the gate member and lateral, security fixed vertical pipe posts. The security barrier of the present invention provides for the use of cable restraints across gate openings to provide necessary security while at the same time allowing for quick opening and closing of the gate areas without compromising security.

  19. Role of slope stability in cumulative impact assessment of hydropower development: North Cascades, Washington

    SciTech Connect (OSTI)

    Lee, R.R.; Staub, W.P.

    1993-08-01

    Two environmental assessments considered the potential cumulative environmental impacts resulting from the development of eight proposed hydropower projects in the Nooksack River Basin and 11 proposed projects in the Skagit River Basin, North Cascades, Washington, respectively. While not identified as a target resource, slope stability and the alteration of sediment supply to creeks and river mainstems significantly affect other resources. The slope stability assessment emphasized the potential for cumulative impacts under disturbed conditions (e.g., road construction and timber harvesting) and a landslide-induced pipeline rupture scenario. In the case of small-scale slides, the sluicing action of ruptured pipeline water on the fresh landslide scarp was found to be capable of eroding significantly more material than the original landslide. For large-scale landslides, sluiced material was found to be a small increment of the original landslide. These results predicted that hypothetical accidental pipeline rupture by small-scale landslides may result in potential cumulative impacts for 12 of the 19 projects with pending license applications in both river basins. 5 refs., 2 tabs.

  20. Remote systems for waste retrieval from the Oak Ridge National Laboratory gunite tanks

    SciTech Connect (OSTI)

    Falter, D.D.; Babcock, S.M.; Burks, B.L.; Lloyd, P.D.; Randolph, J.D.; Rutenber, J.E.; Van Hoesen, S.D.

    1995-12-31

    As part of a Comprehensive Environmental Response, Compensation, and Liability Act Treatability Study funded by the Department of Energy, the Oak Ridge National Laboratory (ORNL) is preparing to demonstrate and evaluate two approaches for the remote retrieval of wastes in underground storage tanks. This work is being performed to identify the most cost-effective and efficient method of waste removal before full-scale remediation efforts begin in 1998. System requirements are based on the need to dislodge and remove sludge wastes ranging in consistency from broth to compacted clay from Gunite (Shotcrete) tanks that are approaching fifty years in age. Systems to be deployed must enter and exit through the existing 0.6 m (23.5 in.) risers and conduct retrieval operations without damaging the layered concrete walls of the tanks. Goals of this project include evaluation of confined sluicing techniques and successful demonstration of a telerobotic arm-based system for deployment of the sluicing system. As part of a sister project formed on the Old Hydrofracture Facility tanks at ORNL, vehicle-based tank remediation will also be evaluated.

  1. Hydroacoustic Evaluation of Overwintering Summer Steelhead Fallback and Kelt Passage at The Dalles Dam 2008-2009

    SciTech Connect (OSTI)

    Khan, Fenton; Johnson, Gary E.; Weiland, Mark A.

    2009-09-01

    This report presents the results of an evaluation of overwintering summer steelhead (Oncorhynchus mykiss) fallback and early out-migrating steelhead kelts downstream passage at The Dalles Dam (TDA) sluiceway and turbines during fall/winter 2008 and early spring 2009, respectively. The study was conducted by the Pacific Northwest National Laboratory (PNNL) for the U.S. Army Corps of Engineers, Portland District (USACE). Operating the sluiceway reduces the potential for hydropower production. However, this surface flow outlet may be the optimal non-turbine route for fallbacks in late fall after the sluiceway is typically closed for juvenile fish passage and for overwintering summer steelhead and kelt passage in the early spring before the start of the voluntary spill season. The goal of this study was to characterize adult steelhead spatial and temporal distributions and passage rates at the sluiceway and turbines, and their movements in front of the sluiceway at TDA to inform fisheries managers’ and engineers’ decision-making relative to sluiceway operations. The study periods were from November 1 to December 15, 2008 (45 days) and from March 1 to April 9, 2009 (40 days). The study objectives were to 1) estimate the number and distribution of overwintering summer steelhead fallbacks and kelt-sized acoustic targets passing into the sluiceway and turbines at TDA during the two study periods, respectively, and 2) assess the behavior of these fish in front of sluice entrances. We obtained fish passage data using fixed-location hydroacoustics and fish behavior data using acoustic imaging. For the overwintering summer steelhead, fallback occurred throughout the 45-day study period. We estimated that a total of 1790 ± 250 (95% confidence interval) summer steelhead targets passed through the powerhouse intakes and operating sluices during November 1 to December 15, 2008. Ninety five percent of these fish passed through the sluiceway. Therefore, without the sluiceway as a route through the dam, a number of steelhead may have fallen back through turbines. Run timing peaked in late November, but fish continued to pass the dam until the end of the study. Horizontal distribution data indicated that sluice 1 is the preferred route for these fish during fallback through the dam. Diel distribution for overwintering steelhead fallbacks was variable with no apparent distinct patterns. Therefore, sluiceway operations should not be based on diel distribution. For the early spring study, overwintering summer steelhead and early out-migrating steelhead kelt downstream passage occurred throughout the 40-day study period. A total of 1766 ± 277 (95% confidence interval) kelt-size targets were estimated to have passed through the powerhouse intakes and operating sluices. Ninety five percent of these fish passed through the sluiceway. Therefore, as with steelhead fallback, not having the sluiceway as a route through the dam, a number of overwintering steelhead and kelts may use the turbines for downstream passage before the start of the spill season. Run timing peaked in late March; however, relatively large numbers of kelt-sized targets passed the dam on March 2 and March 6 (162 and 188 fish, respectively). Horizontal distribution indicated that sluice 1 is the preferred route for these adult salmonids as they migrate downstream through the dam. Again, no clear pattern was seen for diel distribution of overwintering steelhead and early out-migrating kelt passage.

  2. DOE Provides $4.7 Million to Support Excellence in Automotive...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Excellence will be a newly created GATE center. (600,000) University of Illinois at Urbana-Champaign will create a GATE Center for Advanced Automotive Bio-Fuel Combustion Engines. ...

  3. Sandia/CINT Research on the Cover of Applied Physics Letters

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... of partially processed device, showing titanium-gold (TiAu) gates on gallium-arsenide... of partially processed device, showing titanium-gold (TiAu) gates on gallium-arsenide...

  4. ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Summit Featuring Bill Gates, Fred Smith and Lee Scott ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott September 9, 2011 - 9:25am ...

  5. X X

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    X X SUSB - BLDG.53 SSRL Beamlines 8th SSRL School on Synchrotron X-Ray Scattering Techniques in Materials & Environmental Science June 21 - June 23, 2016 Building 53 & 120 (SSRL Beamlines) Gate 17 SLAC Main Gate

  6. Vehicle Technologies Office Merit Review 2014: Penn State DOE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Penn State DOE Graduate GATE Program for In-Vehicle, High-Power Energy Storage Systems Vehicle Technologies Office Merit Review 2014: Penn State DOE Graduate GATE Program for...

  7. CX-013667: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    East Gate and Vasco Gate Kiosk Modifications CX(s) Applied: B1.15, B1.22, B1.32Date: 04/07/2015 Location(s): CaliforniaOffices(s): Lawrence Livermore Site Office

  8. Direct Detector for Terahertz Radiation - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the channel region. The grating gate can be a split-grating gate having at least one finger that can be individually biased. Biasing an individual finger of the split-grating...

  9. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... Optimization efforts in gated x-ray intensifiers Walsh, Peter J., ; Lanier, N. E. ; Chelli, S. J. ; Lvovsky, Marina Gated x-ray intensifiers are often primary imaging diagnostics ...

  10. Monroe County, New York: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    New York Brighton, New York Brockport, New York Chili, New York Churchville, New York Clarkson, New York East Rochester, New York Fairport, New York Gates, New York Gates-North...

  11. EIS-0128-SA-02: Supplement Analysis

    Office of Energy Efficiency and Renewable Energy (EERE)

    Los Banos-Gates (Path 15) Transmission Line Project, Western Area Power Administration, Sierra Nevada Customer Service Region

  12. Remedial Investigation Report on Chestnut Ridge Operable Unit 2 (Filled Coal Ash Pond/Upper McCoy Branch) at the Oak Ridge Y-12 Plant, Oak Ridge, Tennessee. Volume 1. Main Text

    SciTech Connect (OSTI)

    Not Available

    1994-08-01

    This document is a report on the remedial investigation (RI) of Chestnut Ridge Operable Unit (OU) 2 at the Oak Ridge Y-12 Plant. Chestnut Ridge OU 2 consists of Upper McCoy Branch (UMB), the Filled Coal Ash Pond (FCAP), and the area surrounding the Sluice Channel formerly associated with coal ash disposal in the FCAP. Chestnut Ridge OU 2 is located within the U.S. Department of Energy`s (DOE`s) Oak Ridge Reservation in Anderson County, Tennessee, approximately 24 miles west of Knoxville. The pond is an 8.5-acre area on the southern slope of Chestnut Ridge, 0.5 mile south of the main Y-12 Plant and geographically separated from the Y-12 Plant by Chestnut Ridge. The elevation of the FCAP is {approximately} 950 ft above mean sea level (msl), and it is relatively flat and largely vegetated. Two small ponds are usually present at the northeast and northwest comers of the FCAP. The Sluice Channel Area extends {approximately}1000 ft from the northern margin of the FCAP to the crest of Chestnut Ridge, which has an elevation of {approximately}1100 ft above msl. The Sluice Channel Area is largely vegetated also. McCoy Branch runs from the top of Chestnut Ridge across the FCAP into Rogers Quarry and out of the quarry where it runs a short distance into Milton Hill Lake at McCoy Embayment, termed UMB. The portion south of Rogers Quarry, within Chestnut Ridge OU 4, is termed Lower McCoy Branch. The DOE Oak Ridge Y-12 Plant disposed of coal ash from its steam plant operations as a slurry that was discharged into an ash retention impoundment; this impoundment is the FCAP. The FCAP was built in 1955 to serve as a settling basin after coal ash slurried over Chestnut Ridge from the Y-12 Plant. The FCAP was constructed by building an earthen dam across the northern tributary of McCoy Branch. The dam was designed to hold 20 years of Y-12 steam plant ash. By July 1967, ash had filled up the impoundment storage behind the dam to within 4 ft of the top.

  13. Alternate retrieval technology demonstrations program - test report (ARD Environmental, Inc.)

    SciTech Connect (OSTI)

    Berglin, E.J.

    1997-07-31

    A prototype vehicle, control system, and waste and water scavenging system were designed and fabricated with essentially the full capabilities of the vehicle system proposed by ARD Environmental. A test tank mockup, including riser and decontamination chamber were designed and fabricated, and approximately 830 cubic feet of six varieties of waste simulants poured. The tests were performed by ARD Environmental personnel at its site in Laurel, Maryland, from 4/22/97 through 5/2/97. The capabilities tested were deployment and retrieval, extended mobility and productivity, the ability to operate the system using video viewing only, retrieval after simulated failure, and retrieval and decontamination. Testing commenced with deployment of the vehicle into the tank. Deployment was accomplished using a crane and auxiliary winch to position the vehicle and lower it through the decontamination chamber, into the 36`` diameter x 6` high riser, and touch down on the waste field in the tank. The initial mobility tests were conducted immediately after deployment, prior to sluicing, as the waste field exhibited the greatest amount of variation at this time. This test demonstrated the ability of the vehicle to maneuver over the simulated waste field, and the ability of the operator to work with only video viewing available. In addition, the ability of the vehicle to right itself after being turned on its side was demonstrated. The production rate was evaluated daily through the testing period by measuring the surface and estimating the amount of material removed. The test demonstrated the ability of the vehicle to reduce the waste surface using 400 psi (nominal) water jets, scavenge water and material from the work area, and move to any location, even in the relatively confined space of the 20` diameter test tank. In addition, the ability to sluice to a remote scavenging module was demonstrated. The failure mode test demonstrated the ability to retrieve a stuck vehicle by pulling on the tether, even if the vehicle wheels were locked or the vehicle was on its side. Line pull required to retrieve the vehicle was measured, and side load on the riser calculated from the line pull and line angles. Finally, the decontamination test demonstrated the ability to effectively clean the umbilical and vehicle. The issues addressed and resolved during the testing were: Feasibility of deploying a vehicle- based system, mobility, production rate and limitation of water in the tank during sluicing, mining strategy, operator efficiency, vehicle recovery, and decontamination. Water usage and waste removal rates were used to estimate the time and water usage requirements for cleaning a Hanford SST.

  14. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  15. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, T.E.

    1994-07-26

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

  16. Radar transponder operation with compensation for distortion due to amplitude modulation

    DOE Patents [OSTI]

    Ormesher, Richard C.; Tise, Bertice L.; Axline, Jr., Robert M.

    2011-01-04

    In radar transponder operation, a variably delayed gating signal is used to gate a received radar pulse and thereby produce a corresponding gated radar pulse for transmission back to the source of the received radar pulse. This compensates for signal distortion due to amplitude modulation on the retransmitted pulse.

  17. Outfall Site and Type Selection for a New Surface Flow Outlet to Pass Juvenile Salmonids at Bonneville Dams Second Powerhouse, Columbia River

    SciTech Connect (OSTI)

    Johnson, Gary E.; Ebberts, Blaine D.; Giorgi, Albert E.; Kuhn, Karen; Lee, Randall T.; Plump, John H.; Stensby, David A.; Sweeney, Charles E.

    2008-01-01

    A site near the downstream tip of Cascades Island with a mid-level chute outfall type was selected for the high flow (> 28.3 m3/s) outfall of the new surface flow outlet for juvenile salmonids at Bonneville Dams Second Powerhouse (B2). The new passage route and outfall are a result of modifications to the original ice and trash sluice chute to increase discharge capacity and improve passage conditions, including a new outfall type and site. Technical guidelines on high flow outfall location and design were established concurrently with the outfall development process. Critical design parameters for the new B2 outfall included discharge of 150 m3/s, jet entry velocities approaching 15.2 m/s, and a tailwater elevation range of 6.1 m. For outfall siting, the selection process began with identification of nine initial alternatives. Screening, evaluation, and selection stages narrowed the list to two outfall sites Range D 122 m directly downstream from the existing sluice chute outfall and Range F 760 m downstream near the end of Cascades Island. For outfall type, the selection process was initiated with conceptualization of 13 alternatives. Following successive screening, evaluation, consolidation, and selection stages, two outfall types became finalists Adjustable Cantilever and Mid-Level Cantilever. The four combinations of outfall site/type were evaluated in 1:30 and 1:100 scale physical hydraulic models and a Mid-Level Cantilever at the tip of Cascades Island in Range F was selected. During further engineering after our study, the cantilever was replaced with a monolith structure to reduce construction costs, resulting in a mid-level chute outfall that was installed in 2004. Post-construction evaluations indicated survival rates around 100% through the B2CC were the highest of all passage routes at Bonneville Dam. The B2CC surface flow outlet with its high flow outfall provided a major improvement to juvenile salmonid passage at Bonneville Dam.

  18. Asymmetrical field emitter

    DOE Patents [OSTI]

    Fleming, J.G.; Smith, B.K.

    1995-10-10

    A method is disclosed for providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure. 17 figs.

  19. Asymmetrical field emitter

    DOE Patents [OSTI]

    Fleming, James G.; Smith, Bradley K.

    1995-01-01

    Providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure.

  20. Tank Waste Retrieval Lessons Learned at the Hanford Site

    SciTech Connect (OSTI)

    Dodd, R.A.

    2008-07-01

    One of the environmental remediation challenges facing the nation is the retrieval and permanent disposal of approximately 90 million gallons of radioactive waste stored in underground tanks at the U. S. Department of Energy (DOE) facilities. The Hanford Site is located in southeastern Washington State and stores roughly 60 percent of this waste. An estimated 53 million gallons of high-level, transuranic, and low-level radioactive waste is stored underground in 149 single-shell tanks (SSTs) and 28 newer double-shell tanks (DSTs) at the Hanford Site. These SSTs range in size from 55,000 gallons to 1,000,000 gallon capacity. Approximately 30 million gallons of this waste is stored in SSTs. The SSTs were constructed between 1943 and 1964 and all have exceeded the nominal 20-year design life. Sixty-seven SSTs are known or suspected to have leaked an estimated 1,000,000 gallons of waste to the surrounding soil. The risk of additional SST leakage has been greatly reduced by removing more than 3 million gallons of interstitial liquids and supernatant and transferring this waste to the DST system. Retrieval of SST salt-cake and sludge waste is underway to further reduce risks and stage feed materials for the Hanford Site Waste Treatment Plant. Regulatory requirements for SST waste retrieval and tank farm closure are established in the Hanford Federal Facility Agreement and Consent Order (HFFACO), better known as the Tri- Party Agreement, or TPA. The HFFACO was signed by the DOE, the State of Washington Department of Ecology (Ecology), and U.S. Environmental Protection Agency (EPA) and requires retrieval of as much waste as technically possible, with waste residues not to exceed 360 ft{sup 3} in 530,000 gallon or larger tanks; 30 ft{sup 3} in 55,000 gallon or smaller tanks; or the limit of waste retrieval technology, whichever is less. If residual waste volume requirements cannot be achieved, then HFFACO Appendix H provisions can be invoked to request Ecology and EPA approval of an exception to the waste retrieval criteria for a specific tank. Tank waste retrieval has been conducted at the Hanford Site over the last few decades using a method referred to as Past Practice Hydraulic Sluicing. Past Practice Hydraulic Sluicing employs large volumes of DST supernatant and water to dislodge, dissolve, mobilize, and retrieve tank waste. Concern over the leak integrity of SSTs resulted in the need for tank waste retrieval methods capable of using smaller volumes of liquid in a more controlled manner. Retrieval of SST waste in accordance with HFFACO requirements was initiated at the Hanford Site in April 2003. New and innovative tank waste retrieval methods that minimize and control the use of liquids are being implemented for the first time. These tank waste retrieval methods replace Past Practice Hydraulic Sluicing and employ modified sluicing, vacuum retrieval, and in-tank vehicle techniques. Waste retrieval has been completed in seven Hanford Site SSTs (C-106, C-103, C-201, C-202, C-203, C-204, and S-112) in accordance with HFFACO requirements. Three additional tanks are currently in the process of being retrieved (C-108, C-109 and S-102) Preparation for retrieval of two additional SSTs (C-104 and C-110) is ongoing with retrieval operations forecasted to start in calendar year 2008. Tank C-106 was retrieved to a residual waste volume of 470 ft{sup 3} using oxalic acid dissolution and modified sluicing. An Appendix H exception request for Tank C-106 is undergoing review. Tank C-103 was retrieved to a residual volume of 351 ft{sup 3} using a modified sluicing technology. This approach was successful at reaching the TPA limits for this tank of less than 360 ft{sup 3}and the limits of the technology. Tanks C-201, C-202, C-203, and C-204 are smaller (55,000 gallon) tanks and waste removal was completed in accordance with HFFACO requirements using a vacuum retrieval system. Residual waste volumes in each of these four tanks were less than 25 ft{sup 3}. Tank S-112 retrieval was completed February 28, 2007, meeting the TPA Limits of less than

  1. EA-1999: Proposal to Permit 750 Acres and New Training Operations at the Savannah River Site for Use by the State of South Carolina National Guard

    Broader source: Energy.gov [DOE]

    This EA will evaluate the potential environmental impacts from a proposal by South Carolina Military Department (SCMD) to permit the use of 750 acres at SRS for military training exercises and permanent facilities to support training. This proposal, if implemented, would further the purposes of the Memorandum of Understanding between the U.S. Department of the Army and DOE concerning the Use of SRS Lands for Military Training Activities, signed in 2007. SCMD has requested permitting two tracts of land, one near B-Area and one west of L-Lake and north of South Carolina Route 125, to establish facilities for military training purposes. SCMD does not propose to conduct live-fire training or to use tracked vehicles at SRS.

  2. FLUID PRESSURE AND CAM OPERATED VACUUM VALVE

    DOE Patents [OSTI]

    Batzer, T.H.

    1963-11-26

    An ultra-high vacuum valve that is bakable, reusable, and capable of being quickly opened and closed is described. A translationally movable valve gate having an annular ridge is adapted to contact an annular soft metal gasket disposed at the valve seat such that the soft metal gasket extends beyond the annular ridge on all sides. The valve gate is closed, by first laterally aligning the valve gate with the valve seat and then bringing the valve gate and valve seat into seating contact by the translational movement of a ramp-like wedging means that engages similar ramp-like stractures at the base of the valve gate to force the valve gate into essentially pressureless contact with the annular soft metal gasket. This gasket is then pressurized from beneath by a fluid thereby effecting a vacuura tight seal between the gasket and the ridge. (AEC)

  3. Optical data latch

    DOE Patents [OSTI]

    Vawter, G. Allen

    2010-08-31

    An optical data latch is formed on a substrate from a pair of optical logic gates in a cross-coupled arrangement in which optical waveguides are used to couple an output of each gate to an photodetector input of the other gate. This provides an optical bi-stability which can be used to store a bit of optical information in the latch. Each optical logic gate, which can be an optical NOT gate (i.e. an optical inverter) or an optical NOR gate, includes a waveguide photodetector electrically connected in series with a waveguide electroabsorption modulator. The optical data latch can be formed on a III-V compound semiconductor substrate (e.g. an InP or GaAs substrate) from III-V compound semiconductor layers. A number of optical data latches can be cascaded to form a clocked optical data shift register.

  4. Field-effect P-N junction

    DOE Patents [OSTI]

    Regan, William; Zettl, Alexander

    2015-05-05

    This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

  5. Technical Highlights

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bridge (Technical Report) | SciTech Connect Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge Citation Details In-Document Search Title: Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge Subsequent to preliminary investigations by the Golden Gate Bridge Highway & Transportation District (GGB), in coordination with Pacific Gas & Electric (PG&E), the GATEWAY Demonstration program was asked to evaluate the technical

  6. Signal-to-noise and resolution enhancement in ion mobility spectrometry

    Office of Scientific and Technical Information (OSTI)

    using correlation gating techniques : barker codes. (Journal Article) | SciTech Connect Journal Article: Signal-to-noise and resolution enhancement in ion mobility spectrometry using correlation gating techniques : barker codes. Citation Details In-Document Search Title: Signal-to-noise and resolution enhancement in ion mobility spectrometry using correlation gating techniques : barker codes. No abstract prepared. Authors: Rohde, Steven Barney ; Pfeifer, Kent Bryant Publication Date:

  7. Scientists propose a solution to a critical barrier to producing fusion |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Princeton Plasma Physics Lab Scientists propose a solution to a critical barrier to producing fusion By John Greenwald April 23, 2012 Tweet Widget Google Plus One Share on Facebook From left: physicists Luis Delgado-Aparicio and David Gates. (Photo by Elle Starkman, PPPL Office of Communications) From left: physicists Luis Delgado-Aparicio and David Gates. Gallery: From left: physicists Luis Delgado-Aparicio and David Gates. (Photo by Elle Starkman, PPPL Office of Communications) From left:

  8. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... crossover and magnetism in field-effect devices based on ionically gated ... Long-wavelength magnetic and magnetoelectric excitations in the ferroelectric ...

  9. Replace V-Belts with Notched or Synchronous Belt Drives

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... References 1 Mleziva, Brian, Greenheck Fan Corporation, "Ensuring Proper Fan-Belt Tension," HPAC Engineering, July 2011. 2 Gates Rubber Company, "Synchronous Belt Drives Restore ...

  10. ATTACHMENT N

    Office of Environmental Management (EM)

    N FIGURES List of Figures for Permit Figure 1: LANL Regional Location Map Figure 2: LANL Facility Boundary and Technical Area (TA)-Specific Map Figure 3: LANL Facility Boundary with Detail of Non-LANL Areas Figure 4: TA-3 Security Fences, Entry Gates, and Entry Stations Figure 5: Reserved Figure 6: TA-50 Security Fences, Entry Gates, and Entry Stations Figure 7: TA-54, Area L, Security Fences, Entry Gates, and Entry Stations Figure 8: TA-54, Area G, Security Fences, Entry Gates, and Entry

  11. FY 2007 Volume 3

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Changing assumptions on important variables such as these ... Graduate Automotive Technology Education (GATE) activities. ... implemented through systematic multi-year planning; ...

  12. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... Management US Lattice Quantum Chromodynamics ... changed to include gating systems with vertical and ... metal stream toward the open runner mitigating the ...

  13. Laser

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... currently being devel- oped and tested which will employ a three-wave far-infrared laser. ... Laser polarimetry has been used previously to investi- gate magnetic fluctuations ...

  14. High-Temperature, Air-Cooled Traction Drive Inverter Packaging...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Air-Cooled Traction Drive Inverter Benchmarking of Competitive Technologies High Temperature, High Voltage Fully Integrated Gate Driver Circuit

  15. Clemson University | OSTI, US Dept of Energy, Office of Scientific...

    Office of Scientific and Technical Information (OSTI)

    CU-ICAR's Gate Center of Excellence in Sustainable Vehicle Systems , funded by a DOE ... reliability, manufacturing, cost of ownership, customer preference and public policy. ...

  16. COLLOQUIUM: Stellarator Research at PPPL and Beyond | Princeton...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at PPPL and Beyond Dr. David Gates Princeton Plasma Physics Laboratory Recent stellarator research activities have focused on international collaboration, primarily on W7-X. The...

  17. Traffic within the Cytochrome b[subscript 6]f Lipoprotein Complex...

    Office of Scientific and Technical Information (OSTI)

    Traffic within the Cytochrome bsubscript 6f Lipoprotein Complex: Gating of the Quinone Portal Citation Details In-Document Search Title: Traffic within the Cytochrome bsubscript ...

  18. Slide 1

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... and generates a logic-level pulse for the FPGA. The frequency synthesizer generates ... Spartan 6 Field-Programmable Gate Array (FPGA) USB communications between computer ...

  19. Racing Ahead in Automotive Education | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    That's why we're offering 5 million to establish and support Graduate Automotive Technology Education (GATE) Centers of Excellence. These awards will fund curriculum development ...

  20. Vehicle Technologies Office: Graduate Automotive Technology Education...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    By funding curriculum development and expansion as well as laboratory research, GATE ... stringent requirements. Each proposed a curriculum and process for guiding and ...

  1. Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

    SciTech Connect (OSTI)

    Chen, Wei-Wei; Ma, Xiao-Hua E-mail: yhao@xidian.edu.cn; Hou, Bin; Zhu, Jie-Jie; Chen, Yong-He; Zheng, Xue-Feng; Zhang, Jin-Cheng; Hao, Yue E-mail: yhao@xidian.edu.cn

    2014-10-27

    Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors are investigated. The gate leakage current decreases significantly upon removing the SiN layer and no clear critical voltage for the sudden degradation of the gate leakage current can be observed in the reverse-bias step-stress experiments. Gate-lag measurements reveal the decrease of the fast-state surface traps and the increase of slow-state traps after the passivation layer removal. It is postulated that consistent surface charging relieves the electric field peak on the gate edge, thus the inverse piezoelectric effect is shielded.

  2. Y-12 Apprentice Program celebrates third graduating class | Y...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    industry as a whole," said B&W Y-12 President and General ... Dickerson, Erin Earley, David Gates, Chris Hackworth, Jason Harris, Richard Henry, Raymond Hutzler, ...

  3. Hua; Niu, Qian; Zhang, Zhenyu; MacDonald, Allan H. Not Available...

    Office of Scientific and Technical Information (OSTI)

    Gate-tunable exchange coupling between cobalt clusters on graphene Chen, Hua; Niu, Qian; Zhang, Zhenyu; MacDonald, Allan H. Not Available American Physical Society None USDOE...

  4. The FIonorable W

    Office of Legacy Management (LM)

    University of Chicago National Guard Armory Albany Rese-arch Center Elza Gate Seymour Specialty Wire Baker & Williams Warehouses Granite-City Steel Aliquippa Forge ' :. :...

  5. DEVELOPMENT OF A RENEWABLE HYDROGEN PRODUCITON AND FUEL CELL...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications GATE Center for Automotive Fuel Cell Systems at Virginia Tech Education and Outreach Fact Sheet Hydrogen Education Curriculum Path at Michigan ...

  6. Robotics program gets boost from $10,000 donation | National...

    National Nuclear Security Administration (NNSA)

    NNSA Blog About the photo: Don Wood (left), Bushland ISD Superintendent, discusses how the CNS donation will help the Bushland robotics program with Savannah Gates, a CNS Pantex ...

  7. Grand Coulee & Hungry Horse SCADA Replacement

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and six draft tube bulkheads to completely dewater the unit. With the current complement of bulkheads and gates, three units can be dewatered at John Day. The additional...

  8. Site Map

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Access to the ALS Gate Access Guest House Lab Shuttles Maps and Directions Parking Safety Experiment Safety Safety for Staff In Case of Emergency Resources Acronyms Multimedia ...

  9. Development of Spintronic Bandgap Materials (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    These structures were characterized by atomic force microscopy. Vertically gated ... shifts in resonant tunneling of electrons through electronic states in the quantum dots. ...

  10. Search for: All records | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    ... As a result, a photovoltaic effect without any external gates was observed, showing incident photon to converted electron (IPCE) efficiencies of approximately 0.12%, providing ...

  11. NE-24 Gilman Hall, University of California, Certification Documentati...

    Office of Legacy Management (LM)

    ... of Gilman Hall contaminated by MED and AEC activities. 0 Meyers, Sheldon (DOE) to ... actions are documented in the following reports and correspondence: 4 0 Gates, Joseph M. ...

  12. Microsoft Word - DOE-ID-INL-11-013.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 SECTION A. Project Title: Modifications to Central Facilities Area (CFA)-Live Fire Range and Main Gate Drinking Water SECTION B. Project Description: Modification of the drinking...

  13. Microsoft PowerPoint - buzbee2004session1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    way, "Groves giveth, and Gates taketh away." Hence, the need for parallelism. Philip E. Ross, "Commandments," IEEE Spectrum, December 2003, pa. 35. Option 3 Parallelism in the...

  14. Smart Grid Photos | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    system. Smart Grid radio 8 of 12 Smart Grid radio Field programmable gate array (FPGA) technologies to develop improved software-defined radios for the smart grid Smart...

  15. SPEAR3 | Onsite Logistics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lodging Options How to Get Here Transportation Site Map Gate Hours Safety at SSRL SSRL | SLAC | Stanford University | SSRL Computing | SLAC Computing

  16. Intranet | APS X-ray Science Division

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    IT Helpdesk Stockroom Catalog | Shopping Cart | Stockroom (Bldg. 401) 2-9082 Key Request Phone Request Argonne Internal Resources: 401 Grill Inside Argonne AMOS, GatePass,...

  17. Center for Lightweighting Automotive Materials and Processing...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Center for Lightweighting Automotive Materials and Processing 2008 Annual Merit Review Results Summary - 16. Technology Integration and Education GATE Center of Excellence in ...

  18. Ocean County, New Jersey: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    New Jersey Manahawkin, New Jersey Mantoloking, New Jersey Mystic Island, New Jersey New Egypt, New Jersey North Beach Haven, New Jersey Ocean Acres, New Jersey Ocean Gate, New...

  19. OM300-GeoThermal MWD Navigation Instrument

    Broader source: Energy.gov [DOE]

    Develop a 300°C capable directional drilling navigation tool using Micro Electro-Mechanical Systems (MEMS) accelerometers and flux-gate magnetometers.

  20. Wayne County, Illinois: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Golden Gate, Illinois Jeffersonville, Illinois Johnsonville, Illinois Keenes, Illinois Mill Shoals, Illinois Mount Erie, Illinois Sims, Illinois Wayne City, Illinois Retrieved...

  1. EM News Flashes | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Christmas in 1945. Gates contributed to the Voices of the Manhattan Project, a storytelling project launched by the Atomic Heritage Foundation and Los Alamos Historical...

  2. Press Pass - Press Releases

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    can obtain temporary visitors' passes. The laboratory will also be closed to pedestrian and bicycle traffic. Fermilab, traditionally open to visitors, closed its gates in...

  3. Press Pass - Press Releases

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to visitors daily during daylight hours. The new gates will not affect bicycle or pedestrian traffic at either entrance. Emergency vehicles will continue to have 24-hour access...

  4. Center for Lightweighting Automotive Materials and Processing...

    Broader source: Energy.gov (indexed) [DOE]

    GATE Center of Excellence in Lightweight Materials and Manufacturing Technologies Vehicle Technologies Office Merit Review 2014: Improving Fatigue Performance of AHSS Welds

  5. Coupled ion Binding and Structural Transitions Along the Transport...

    Office of Scientific and Technical Information (OSTI)

    binding primes the transport domain to accept its substrate and triggers extracellular gate opening, which prevents inward domain translocation until substrate binding takes place. ...

  6. Weardale Task Force | Open Energy Information

    Open Energy Info (EERE)

    that is developing a sustainable community in the East gate area which will be run on wind, solar, biomass, geothermal and hydro power. References: Weardale Task Force1...

  7. 2011 Annual Merit Review Results Report - Technology Integration...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Merit review of DOE Vehicle Technologies research activities PDF icon 2011amr08.pdf More Documents & Publications Penn State DOE Graduate Automotive Technology Education (Gate) ...

  8. Scott County, Virginia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Duffield, Virginia Dungannon, Virginia Gate City, Virginia Nickelsville, Virginia Weber City, Virginia Retrieved from "http:en.openei.orgwindex.php?titleScottCounty,Vi...

  9. Direct detector for terahertz radiation

    DOE Patents [OSTI]

    Wanke, Michael C. (Albuquerque, NM); Lee, Mark (Albuquerque, NM); Shaner, Eric A. (Albuquerque, NM); Allen, S. James (Santa Barbara, CA)

    2008-09-02

    A direct detector for terahertz radiation comprises a grating-gated field-effect transistor with one or more quantum wells that provide a two-dimensional electron gas in the channel region. The grating gate can be a split-grating gate having at least one finger that can be individually biased. Biasing an individual finger of the split-grating gate to near pinch-off greatly increases the detector's resonant response magnitude over prior QW FET detectors while maintaining frequency selectivity. The split-grating-gated QW FET shows a tunable resonant plasmon response to FIR radiation that makes possible an electrically sweepable spectrometer-on-a-chip with no moving mechanical optical parts. Further, the narrow spectral response and signal-to-noise are adequate for use of the split-grating-gated QW FET in a passive, multispectral terahertz imaging system. The detector can be operated in a photoconductive or a photovoltaic mode. Other embodiments include uniform front and back gates to independently vary the carrier densities in the channel region, a thinned substrate to increase bolometric responsivity, and a resistive shunt to connect the fingers of the grating gate in parallel and provide a uniform gate-channel voltage along the length of the channel to increase the responsivity and improve the spectral resolution.

  10. Types of Hydropower Plants | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Drawing showing a cross section of an impoundment dam and hydropower plant. Transmission ... Drawing shows a micro hydropower plant. Intake gates allow water to flow through the ...

  11. Microsoft PowerPoint - Stockton Update_SWPA Conf_Rev 1 (Jun...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cross Section Intake Bulkheads Draft Tube Bulkheads Intake Gates BUILDING STRONG Blade Failure Blade Failure On 4 Feb 2009 the unit experienced a severe vibration activating...

  12. A T IT S A T IT S S C I E N C E SECURITY WO R ST B E S T A Special...

    Office of Environmental Management (EM)

    waiting to happen. The physical security efforts of the weapons labs (often called the "guns, guards, and gates") have had some isolated shortcomings, but on balance they have...

  13. Alternative Fuels Data Center

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    in designated ozone and carbon monoxide air quality nonattainment and maintenance areas. ... gate electrification, and other airport air quality improvements. For more information, ...

  14. PIA - Savannah River Nuclear Solution (SRNS) Procurement Cycle...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    System (HRMS) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)

  15. PIA - Savannah River Nuclear Solution (SRNS) Energy Employees...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) Procurement ...

  16. PIA - Savannah River Nuclear Solutions (SRNS) Human Resource...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Contractor (HRMS) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)

  17. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Vertically gated structures were created on systems with up ... coherent quantum control of defect spins could ... the Rashba (alpha) and linear Dresselhaus (betasub ...

  18. Microsoft Word - Instructions Upon Arrival.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    EFCOG ELECTRICAL SAFETY WORKSHOP ARRIVAL INSTRUCTIONS MAIN GATE SECURITY & PARKING The top two (2) floors of the parking garage usually have the best availability. Upon arrival...

  19. Hydroacoustic Evaluation of Overwintering Summer Steelhead Fallback and Kelt Passage at The Dalles Dam, 2009-2010

    SciTech Connect (OSTI)

    Khan, Fenton; Johnson, Gary E.; Weiland, Mark A.

    2010-07-31

    This report presents the results of an evaluation of overwintering summer steelhead (Oncorhynchus mykiss) fallback and early out-migrating steelhead kelts downstream passage at The Dalles Dam (TDA) sluiceway and turbines during fall/winter 2009 through early spring 2010. The study was conducted by the Pacific Northwest National Laboratory (PNNL) for the U.S. Army Corps of Engineers, Portland District (USACE). The goal of this study was to characterize adult steelhead spatial and temporal distributions and passage rates at the sluiceway and turbines for fisheries managers and engineers to use in decision-making relative to sluiceway operations. The study was from November 1, 2009 to April 10, 2010. The study was divided into three study periods: Period 1, November 1 - December 15, 2009 for a fall/winter sluiceway and turbine study; Period 2, December 16, 2009 - February 28, 2010 for a turbine only study; Period 3, March 1 - April 10, 2010 for a spring sluiceway and turbine study. Sluiceway operations were scheduled to begin on March 1 for this study; however, because of an oil spill cleanup near the sluice outfall, sluiceway operations were delayed until March 8, 2010, therefore the spring study period did not commence until March 8. The study objectives were to (1) estimate the number and distribution of overwintering summer steelhead fallbacks and kelt-sized acoustic targets passing into the sluiceway and turbines at TDA between November 1 and December 15, 2009 and March 1 and April 10, 2010, and (2) estimate the numbers and distribution of adult steelhead and kelt-sized targets passing into turbine units between December 16, 2009 and February 28, 2010. We obtained fish passage data using fixed-location hydroacoustics. For Period 1, overwintering summer steelhead fallback occurred throughout the 45-day study period. A total of 879 {+-} 165 (95% CI) steelhead targets passed through the powerhouse and sluiceway during November 1 to December 15, 2009. Ninety two percent of these fish passed through the sluiceway. Run timing peaked in early December, but fish continued to pass the dam until the end of the study. Horizontal distribution data indicated that Sluice 1 is the preferred route for these fish during fallback through the dam. Diel distribution for steelhead was variable with no apparent distinct patterns. For Period 2, adult steelhead passage occurred on January 14 and 31 and February 2, 22, and 24. A total of 62 {+-} 40 (95% CI) steelhead targets passed through the powerhouse intakes during December 16, 2009 to March 7, 2010. Horizontal distribution data indicated turbine unit 18 passed the majority of fish. Fish passage occurred during morning periods. Passage did not occur during afternoon or nighttime. For Period 3, the early spring study period, overwintering summer steelhead and early out-migrating steelhead kelt downstream passage occurred throughout the 34-day study period. A total of 1,985 {+-} 234 (95% CI) kelt-size targets were estimated to have passed through the powerhouse sluiceway. Ninety-nine percent of these fish passed through the sluiceway. Run timing peaked in late March and again in early April. Horizontal distribution indicated that Sluice 1 is the preferred route for these adult salmonids as they migrate downstream through the dam. Diel distribution for steelhead was variable with no apparent distinct patterns. The results of this study strongly suggest that operating the TDA sluiceway for steelhead passage (fallbacks and kelts) during the late fall, winter, and early spring months will provide an optimal, non-turbine route for these fishes to pass the dam.

  20. TANK FARM RETRIEVAL LESSONS LEARNED AT THE HANFORD SITE

    SciTech Connect (OSTI)

    DODD RA

    2008-01-22

    One of the environmental remediation challenges facing the nation is the retrieval and permanent disposal of approximately 90 million gallons of radioactive waste stored in underground tanks at the U. S. Department of Energy (DOE) facilities. The Hanford Site is located in southeastern Washington State and stores roughly 60 percent of this waste. An estimated 53 million gallons of high-level, transuranic, and low-level radioactive waste is stored underground in 149 single-shell tanks (SSTs) and 28 newer double-shell tanks (DSTs) at the Hanford Site. These SSTs range in size from 55,000 gallons to 1,000,000 gallon capacity. Approximately 30 million gallons of this waste is stored in SSTs. The SSTs were constructed between 1943 and 1964 and all have exceeded the nominal 20-year design life. Sixty-seven SSTs are known or suspected to have leaked an estimated 1,000,000 gallons of waste to the surrounding soil. The risk of additional SST leakage has been greatly reduced by removing more than 3 million gallons of interstitial liquids and supernatant and transferring this waste to the DST system. Retrieval of SST saltcake and sludge waste is underway to further reduce risks and stage feed materials for the Hanford Site Waste Treatment Plant. Regulatory requirements for SST waste retrieval and tank farm closure are established in the Hanford Federal Facility Agreement and Consent Order (HFFACO), better known as the TriParty Agreement, or TPA. The HFFACO was signed by the DOE, the State of Washington Department of Ecology (Ecology), and U. S. Environmental Protection Agency (EPA) and requires retrieval of as much waste as technically possible, with waste residues not to exceed 360 fe in 530,000 gallon or larger tanks; 30 fe in 55,000 gallon or smaller tanks; or the limit of waste retrieval technology, whichever is less. If residual waste volume requirements cannot be achieved, then HFFACO Appendix H provisions can be invoked to request Ecology and EPA approval of an exception to the waste retrieval criteria for a specific tank. Tank waste retrieval has been conducted at the Hanford Site over the last few decades using a method referred to as Past Practice Hydraulic Sluicing. Past Practice Hydraulic Sluicing employs large volumes of DST supernatant and water to dislodge, dissolve, mobilize, and retrieve tank waste. Concern over the leak integrity of SSTs resulted in the need for tank waste retrieval methods capable of using smaller volumes of liquid in a more controlled manner.

  1. Protective circuit for thyristor controlled systems and thyristor converter embodying such protective circuit

    DOE Patents [OSTI]

    Downhower, Jr., Francis H. (Alden, NY); Finlayson, Paul T. (Depew, NY)

    1984-04-10

    A snubber circuit coupled across each thyristor to be gated in a chain of thyristors determines the critical output of a NOR LATCH whenever one snubber circuit could not be charged and discharged under normal gating conditions because of a short failure.

  2. Front and backside processed thin film electronic devices

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2010-10-12

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  3. Front and backside processed thin film electronic devices

    DOE Patents [OSTI]

    Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang; Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.

    2012-01-03

    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  4. Method for double-sided processing of thin film transistors

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2008-04-08

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  5. Center for Electric Drive Transportation at the University of Michigan -

    Broader source: Energy.gov (indexed) [DOE]

    Dearborn | Department of Energy ti020_mi_2012_p.pdf More Documents & Publications Center for Electric Drive Transportation at the University of Michigan - Dearborn Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan - Dearborn Vehicle Technologies Office Merit Review 2015: GATE Center for Electric Drive Transportation

  6. Structure of the Transmembrane Regions of a Bacterial Cyclic Nucleotide-Regulated Channel

    SciTech Connect (OSTI)

    Clayton,G.; Latieri, S.; Heginbotham, L.; Unger, V.; Morais-Cabral, J.

    2008-01-01

    The six-transmembrane helix (6 TM) tetrameric cation channels form the largest ion channel family, some members of which are voltage-gated and others are not. There are no reported channel structures to match the wealth of functional data on the non-voltage-gated members. We determined the structure of the transmembrane regions of the bacterial cyclic nucleotide-regulated channel MlotiK1, a non-voltage-gated 6 TM channel. The structure showed how the S1-S4 domain and its associated linker can serve as a clamp to constrain the gate of the pore and possibly function in concert with ligand-binding domains to regulate the opening of the pore. The structure also led us to hypothesize a new mechanism by which motions of the S6 inner helices can gate the ion conduction pathway at a position along the pore closer to the selectivity filter than the canonical helix bundle crossing.

  7. Integrated field emission array for ion desorption

    DOE Patents [OSTI]

    Resnick, Paul J; Hertz, Kristin L; Holland, Christopher; Chichester, David; Schwoebel, Paul

    2013-09-17

    An integrated field emission array for ion desorption includes an electrically conductive substrate; a dielectric layer lying over the electrically conductive substrate comprising a plurality of laterally separated cavities extending through the dielectric layer; a like plurality of conically-shaped emitter tips on posts, each emitter tip/post disposed concentrically within a laterally separated cavity and electrically contacting the substrate; and a gate electrode structure lying over the dielectric layer, including a like plurality of circular gate apertures, each gate aperture disposed concentrically above an emitter tip/post to provide a like plurality of annular gate electrodes and wherein the lower edge of each annular gate electrode proximate the like emitter tip/post is rounded. Also disclosed herein are methods for fabricating an integrated field emission array.

  8. Thin Film Transistors On Plastic Substrates

    DOE Patents [OSTI]

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  9. Modifications of Fowler-Nordheim injection characteristics in {gamma} irradiated MOS devices

    SciTech Connect (OSTI)

    Scarpa, A.; Paccagnella, A.; Montera, F.; Candelori, A.; Ghibaudo, G.; Pananakakis, G.; Fuochi, P.G.

    1998-06-01

    In this work the authors have investigated how gamma irradiation affects the tunneling conduction mechanism of a 20 nm thick oxide in MOS capacitors. The radiation induced positive charge is rapidly compensated by the injected electrons, and does not impact the gate current under positive injection after the first current-voltage measurement. Only a transient stress induced leakage current at low gate bias is observed. Instead, a radiation induced negative charge has been observed near the polysilicon gate, which enhances the gate voltage needed for Fowler-Nordheim conduction at negative gate bias. No time decay of this charge has been observed. Such charges slightly modify the trapping kinetics of negative charge during subsequent electrical stresses performed at constant current condition.

  10. Nanoeletromechanical switch and logic circuits formed therefrom

    DOE Patents [OSTI]

    Nordquist, Christopher D.; Czaplewski, David A.

    2010-05-18

    A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.

  11. Regulatory issues associated with closure of the Hanford AX Tank Farm ancillary equipment

    SciTech Connect (OSTI)

    Becker, D.L.

    1998-09-02

    Liquid mixed, high-level radioactive waste has been stored in underground single-shell tanks at the US Department of Energy`s (DOE`s) Hanford Site. After retrieval of the waste from the single-shell tanks, the DOE will proceed with closure of the tank farm. The 241-AX Tank Farm includes four one-million gallon single-shell tanks in addition to sluice lines, transfer lines, ventilation headers, risers, pits, cribs, catch tanks, buildings, well and associated buried piping. This equipment is classified as ancillary equipment. This document addresses the requirements for regulatory close of the ancillary equipment in the Hanford Site 241-AX Tank Farm. The options identified for physical closure of the ancillary equipment include disposal in place, disposal in place after treatment, excavation and disposal on site in an empty single-shell tank, and excavation and disposal outside the AX Tank Farm. The document addresses the background of the Hanford Site and ancillary equipment in the AX Tank Farm, regulations for decontamination and decommissioning of radioactively contaminated equipment, requirements for the cleanup and disposal of radioactive wastes, cleanup and disposal requirements governing hazardous and mixed waste, and regulatory requirements and issues associated with each of the four physical closure options. This investigation was conducted by the Sandia National Laboratories, Albuquerque, New Mexico, during Fiscal Year 1998 for the Hanford Tanks Initiative Project.

  12. Test Plan for the Demonstration of Geophysical Techniques for Single-Shell Tank Leak Detection at the Hanford Mock Tank Site: Fiscal Year 2001

    SciTech Connect (OSTI)

    Barnett, D. Brent; Gee, Glendon W.; Sweeney, Mark D.

    2001-07-31

    As part of the Leak Detection, Monitoring and Mitigation (LDMM) program conducted by CH2M HILL 105-A during FY 2001. These tests are being conducted to assess the applicability of these methods (Electrical Resistance Tomography [ERT], High Resolution Resistivity [HRR], Cross-Borehole Seismography [XBS], Cross-Borehole Radar [XBR], and Cross-Borehole Electromagnetic Induction [CEMI]) to the detection and measurement of Single Shell Tank (SST) leaks into the vadose zone during planned sluicing operations. The testing in FY 2001 will result in the selection of up to two methods for further testing in FY 2002. In parallel with the geophysical tests, a Partitioning Interwell Tracer Test (PITT) study will be conducted simultaneously at the Mock Tank to assess the effectiveness of this technology in detecting and quantifying tank leaks in the vadose zone. Preparatory and background work using Cone Penetrometer methods (CPT) will be conducted at the Mock Tank site and an adjacent test area to derive soil properties for groundtruthing purposes for all methods.

  13. Universal quantum computation in a semiconductor quantum wire network

    SciTech Connect (OSTI)

    Sau, Jay D.; Das Sarma, S.; Tewari, Sumanta

    2010-11-15

    Universal quantum computation (UQC) using Majorana fermions on a two-dimensional topological superconducting (TS) medium remains an outstanding open problem. This is because the quantum gate set that can be generated by braiding of the Majorana fermions does not include any two-qubit gate and also no single-qubit {pi}/8 phase gate. In principle, it is possible to create these crucial extra gates using quantum interference of Majorana fermion currents. However, it is not clear if the motion of the various order parameter defects (vortices, domain walls, etc.), to which the Majorana fermions are bound in a TS medium, can be quantum coherent. We show that these obstacles can be overcome using a semiconductor quantum wire network in the vicinity of an s-wave superconductor, by constructing topologically protected two-qubit gates and any arbitrary single-qubit phase gate in a topologically unprotected manner, which can be error corrected using magic-state distillation. Thus our strategy, using a judicious combination of topologically protected and unprotected gate operations, realizes UQC on a quantum wire network with a remarkably high error threshold of 0.14 as compared to 10{sup -3} to 10{sup -4} in ordinary unprotected quantum computation.

  14. Study of transparent and nontransparent regimes of implosion in star wire arrays

    SciTech Connect (OSTI)

    Ivanov, V. V.; Astanovitskiy, A. L.; Papp, D.; Altemara, S. D.; Chittenden, J. P.; Bland, S. N.; Jones, B.

    2010-10-15

    Star wire arrays were used to control the imploding plasma flows and study plasma interpenetration. These arrays consisted of linear 'rays' aligned azimuthally and extending from the vertical axis. Star arrays with two close located wires ('gates') instead of a single wire on the inner cylinder were studied for transparent and nontransparent regimes of propagation of imploding plasma through the gates. Nontransparent mode of collision is typical for regular star wire arrays and it was also observed in Al stars with gate wires of regular length and with the gate width of 0.3-2 mm. The cascade process of implosion in stars and trapping of imploding plasma in 1-2 mm gates were modeled with the three-dimensional resistive magnetohydrodynamics code. The intermediate semitransparent mode of collision was observed in Al stars with long Al 'gate' wires. A transparent mode was observed in Al stars with long stainless steel or W gate wires. Applications of wire arrays with controlled plasma flows are discussed.

  15. Electrochemical formation of field emitters

    DOE Patents [OSTI]

    Bernhardt, Anthony F.

    1999-01-01

    Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area.

  16. Bilayer graphene quantum dot defined by topgates

    SciTech Connect (OSTI)

    Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W.

    2014-06-21

    We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.

  17. Ultra-wideband radar motion sensor

    DOE Patents [OSTI]

    McEwan, T.E.

    1994-11-01

    A motion sensor is based on ultra-wideband (UWB) radar. UWB radar range is determined by a pulse-echo interval. For motion detection, the sensors operate by staring at a fixed range and then sensing any change in the averaged radar reflectivity at that range. A sampling gate is opened at a fixed delay after the emission of a transmit pulse. The resultant sampling gate output is averaged over repeated pulses. Changes in the averaged sampling gate output represent changes in the radar reflectivity at a particular range, and thus motion. 15 figs.

  18. Dual amplitude pulse generator for radiation detectors

    DOE Patents [OSTI]

    Hoggan, Jerry M. (Idaho Falls, ID); Kynaston, Ronnie L. (Blackfoot, ID); Johnson, Larry O. (Island Park, ID)

    2001-01-01

    A pulsing circuit for producing an output signal having a high amplitude pulse and a low amplitude pulse may comprise a current source for providing a high current signal and a low current signal. A gate circuit connected to the current source includes a trigger signal input that is responsive to a first trigger signal and a second trigger signal. The first trigger signal causes the gate circuit to connect the high current signal to a pulse output terminal whereas the second trigger signal causes the gate circuit to connect the low current signal to the pulse output terminal.

  19. NREL: U.S. Life Cycle Inventory Database Home Page

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U.S. Life-Cycle Inventory Database Buildings Research Photo of a green field with an ocean in the background. U.S. Life Cycle Inventory Database NREL and its partners created the U.S. Life Cycle Inventory (LCI) Database to help life cycle assessment (LCA) practitioners answer questions about environmental impact. This database provides individual gate-to-gate, cradle-to-gate and cradle-to-grave accounting of the energy and material flows into and out of the environment that are associated with

  20. Mutations that stabilize the open state of the Erwinia chrisanthemi

    Office of Scientific and Technical Information (OSTI)

    ligand-gated ion channel fail to change the conformation of the pore domain in crystals (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Mutations that stabilize the open state of the Erwinia chrisanthemi ligand-gated ion channel fail to change the conformation of the pore domain in crystals Citation Details In-Document Search Title: Mutations that stabilize the open state of the Erwinia chrisanthemi ligand-gated ion channel fail to change the conformation