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While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

The limnology of L Lake: Results of the L-Lake monitoring program, 1986--1989  

SciTech Connect (OSTI)

L Lake was constructed in 1985 on the upper regions of Steel Creek, SRS to mitigate the heated effluents from L Reactor. In addition to the NPDES permit specifications (Outfall L-007) for the L-Reactor outfall, DOE-SR executed an agreement with the South Carolina Department of Health and Environmental Control (SCDHEC), that thermal effluents from L-Reactor will not substantially alter ecosystem components in the approximate lower half of L Lake. This region should be inhabited by Balanced (Indigenous) Biological Communities (BBCs) in accordance with Section 316(a) of the Pollution Control (Clean Water) Act (Public Law 92-500). In response to this requirement the Environmental Sciences Section/Ecology Group initiated a comprehensive biomonitoring program which documented the development of BBCs in L Lake from January 1986 through December 1989. This report summarizes the principal results of the program with regards to BBC compliance issues and community succession in L Lake. The results are divided into six sections: water quality, macronutrients, and phytoplankton, aquatic macrophytes, zooplankton, benthic macroinvertebrates, fish, and community succession. One of the prime goals of the program was to detect potential reactor impacts on L Lake.

Bowers, J.A.

1991-12-15T23:59:59.000Z

2

Steel Creek fish, L-Lake/Steel Creek Biological Monitoring Program, January 1986--December 1991  

SciTech Connect (OSTI)

The Savannah River Site (SRS) encompasses 300 sq mi of the Atlantic Coastal plain in west-central South Carolina. The Savannah River forms the western boundary of the site. Five major tributaries of the Savannah River -- Upper Three Runs Creek, Four Mile Creek, Pen Branch, Steel Creek, and Lower Three Runs Creek -- drain the site. All but Upper Three Runs Creek receive, or in the past received, thermal effluents from nuclear production reactors. In 1985, L Lake, a 400-hectare cooling reservoir, was built on the upper reaches of Steel Creek to receive effluent from the restart of L-Reactor, and protect the lower reaches from thermal impacts. The lake has an average width of approximately 600 m and extends along the Steel Creek valley approximately 7000 m from the dam to the headwaters. Water level is maintained at a normal pool elevation of 58 m above mean sea level by overflow into a vertical intake tower that has multilevel discharge gates. The intake tower is connected to a horizontal conduit that passes through the dam and releases water into Steel Creek. The Steel Creek Biological Monitoring Program was designed to meet environmental regulatory requirements associated with the restart of L-Reactor and complements the Biological Monitoring Program for L Lake. This extensive program was implemented to address portions of Section 316(a) of the Clean Water Act. The Department of Energy (DOE) must demonstrate that the operation of L-Reactor will not significantly alter the established aquatic ecosystems.

Sayers, R.E. Jr.; Mealing, H.G. III [Normandeau Associates, Inc., New Ellenton, SC (United States)

1992-04-01T23:59:59.000Z

3

Waste retrieval sluicing system data acquisition system acceptance test report  

SciTech Connect (OSTI)

This document describes the test procedure for the Project W-320 Tank C-106 Sluicing Data Acquisition System (W-320 DAS). The Software Test portion will test items identified in the WRSS DAS System Description (SD), HNF-2115. Traceability to HNF-2115 will be via a reference that follows in parenthesis, after the test section title. The Field Test portion will test sensor operability, analog to digital conversion, and alarm setpoints for field instrumentation. The W-320 DAS supplies data to assist thermal modeling of tanks 241-C-106 and 241-AY-102. It is designed to be a central repository for information from sources that would otherwise have to be read, recorded, and integrated manually. Thus, completion of the DAS requires communication with several different data collection devices and output to a usable PC data formats. This test procedure will demonstrate that the DAS functions as required by the project requirements stated in Section 3 of the W-320 DAS System Description, HNF-2115.

Bevins, R.R.

1998-07-31T23:59:59.000Z

4

CX-010121: Categorical Exclusion Determination | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

21: Categorical Exclusion Determination 21: Categorical Exclusion Determination CX-010121: Categorical Exclusion Determination 685-G Par Pond and 686-G L-Lake Sluice Gate Conduit Cleanouts/Inspections CX(s) Applied: B1.3 Date: 03/21/2013 Location(s): South Carolina Offices(s): Savannah River Operations Office The purpose of this activity is to perform gate checks and clear weeds and other debris from the conduits at Par Pond Dam and Steel Creek Dam (L-Lake), in part to facilitate Federal Energy Regulatory Commission inspection requirements. This will be accomplished at Par Pond by opening the sluice gate and increasing the flow from the normal 10 CFS incrementally to a fully open flow of 2000 CFS. Flow will be increased by opening the sluice gate in stages of 50% per hour until the gate is fully

5

U.S. Department of Energy Categorical Exclusion Determination Form  

Broader source: Energy.gov (indexed) [DOE]

685-G PAR Pond and 686-G L-Lake Sluice Gate Conduit Cleanouts/Inspections 685-G PAR Pond and 686-G L-Lake Sluice Gate Conduit Cleanouts/Inspections Savannah River Site Aiken/Aiken/South Carolina The purpose of this activity is to perform gate checks and clear weeds and other debris from the conduits at Par Pond Dam and Steel Creek Dam (L-Lake), in part to facilitate Federal Energy Regulatory Commission inspection requirements. This will be accomplished at Par Pond by opening the sluice gate and increasing the flow from the normal 10 CFS incrementally to a fully open flow of 2000 CFS. Flow will be increased by opening the sluice gate in stages of 50% per hour until the gate is fully open. The gate will remain fully open for 5 minutes, whereupon the gate will be closed to its normal position and flow of 10 CFS. At Steel Creek Dam, this will be accomplished in the same manner except normal flow is 4.5

6

U.S. Department of Energy Categorical Exclusion Determination Form  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

685-G PAR Pond and 686-G L-Lake Sluice Gate Conduit Cleanouts/Inspections 685-G PAR Pond and 686-G L-Lake Sluice Gate Conduit Cleanouts/Inspections Savannah River Site Aiken/Aiken/South Carolina The purpose of this activity is to perform gate checks and clear weeds and other debris from the conduits at Par Pond Dam and Steel Creek Dam (L-Lake), in part to facilitate Federal Energy Regulatory Commission inspection requirements. This will be accomplished at Par Pond by opening the sluice gate and increasing the flow from the normal 10 CFS incrementally to a fully open flow of 2000 CFS. Flow will be increased by opening the sluice gate in stages of 50% per hour until the gate is fully open. The gate will remain fully open for 5 minutes, whereupon the gate will be closed to its normal position and flow of 10 CFS. At Steel Creek Dam, this will be accomplished in the same manner except normal flow is 4.5

7

CX-002205: Categorical Exclusion Determination | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

205: Categorical Exclusion Determination 205: Categorical Exclusion Determination CX-002205: Categorical Exclusion Determination 686-G Steel Creek Dam (L-Lake) Inspection CX(s) Applied: B1.3 Date: 04/16/2010 Location(s): Aiken, South Carolina Office(s): Environmental Management, Savannah River Operations Office The purpose of this activity is to perform gate checks and inspect the operating mechanisms of the gates at Steel Creek Dam (L-Lake). This will be accomplished by opening the sluice gate and increasing the flow from the normal 4.5 cubic feet per second (CFS) incrementally to a fully open flow of 1400 CFS. Flow will be increased by opening the sluice gate in stages of 50% per hour until the gate is fully open. The gate will remain fully open for 5 minutes, whereupon the gate will be closed to its normal position and

8

Project management plan for Project W-320, Tank 241-C-106 sluicing. Revision 2  

SciTech Connect (OSTI)

A major mission of the US Department of Energy (DOE) is the permanent disposal of Hanford Site defense wastes by utilizing safe, environmentally acceptable, and cost-effective disposal methods that meet applicable regulations. The Tank Waste Remediation System (TWRS) Program was established at the Hanford Site to manage and control activities specific to the remediation of safety watch list tanks, including high-heat-producing tanks, and for the ultimate characterization, retrieval, pretreatment, and disposal of the low- and high-level fractions of the tank waste. Project W-320, Tank 241-C-106 Sluicing, provides the methodology, equipment, utilities, and facilities necessary for retrieving the high-heat waste from single-shell tank (SST) 24-C-106. Project W-320 is a fiscal year (FY) 1993 expense-funded major project, and has a design life of 2 years. Retrieval of the waste in tank 241-C-106 will be accomplished through mobilization of the sludge into a pumpable slurry using past-practice sluicing. The waste is then transferred directly to a double-shell tank for interim storage, subsequent pretreatment, and eventual disposal. A detailed description of the management organization and responsibilities of all participants is presented in this document.

Phillips, D.R.

1994-07-01T23:59:59.000Z

9

Steel Creek primary producers: Periphyton and seston, L-Lake/Steel Creek Biological Monitoring Program, January 1986--December 1991  

SciTech Connect (OSTI)

The Savannah River Site (SRS) encompasses 300 sq mi of the Atlantic Coastal Plain in west-central South Carolina. Five major tributaries of the Savannah River -- Upper Three Runs Creek, Four Mile Creek, Pen Branch, Steel Creek, and Lower Three Runs Creek -- drain the site. In 1985, L Lake, a 400-hectare cooling reservoir, was built on the upper reaches of Steel Creek to receive effluent from the restart of L-Reactor and to protect the lower reaches from thermal impacts. The Steel Creek Biological Monitoring Program was designed to assess various components of the system and identify and changes due to the operation of L-Reactor or discharge from L Lake. An intensive ecological assessment program prior to the construction of the lake provided baseline data with which to compare data accumulated after the lake was filled and began discharging into the creek. The Department of Energy must demonstrate that the operation of L-Reactor will not significantly alter the established aquatic ecosystems. This report summarizes the results of six years` data from Steel Creek under the L-Lake/Steel Creek Monitoring Program. L Lake is discussed separately from Steel Creek in Volumes NAI-SR-138 through NAI-SR-143.

Bowers, J.A. [Westinghouse Savannah River Co., Aiken, SC (United States); Toole, M.A.; van Duyn, Y. [Normandeau Associates Inc., New Ellenton, SC (United States)

1992-02-01T23:59:59.000Z

10

Imaging through obscurations for sluicing operations in the waste storage tanks  

SciTech Connect (OSTI)

Waste remediators have identified that surveillance of waste remediation operations and periodic inspections of stored waste are required under very demanding and difficult viewing environments. In many cases, obscurants such as dust or water vapor are generated as part of the remediation activity. Methods are required for viewing or imaging beyond the normal visual spectrum. Work space images guide the movement of remediation equipment, creating a need for rapidly updated, near real-time imaging capability. In addition, there is a need for three-dimensional topographical data to determine the contours of the wastes, to plan retrieval campaigns, and to provide a three-dimensional map of a robot`s work space as basis for collision avoidance. Three basic imaging techniques were evaluated: optical, acoustic and radar. The optical imaging methods that were examined used cameras which operated in the visible region and near-infrared region and infrared cameras which operated in the 3--5 micron and 8--12 micron wavelength regions. Various passive and active lighting schemes were tested, as well as the use of filters to eliminate reflection in the visible region. Image enhancement software was used to extend the range where visual techniques could be used. In addition, the operation of a laser range finder, which operated at 0.835 microns, was tested when fog/water droplets were suspended in the air. The acoustic technique involved using commercial acoustic sensors, operating at approximately 50 kHz and 215 kHz, to determine the attenuation of the acoustic beam in a high-humidity environment. The radar imaging methods involved performing millimeter wave (94 GHz) attenuation measurement sin the various simulated sluicing environments and performing preliminary experimental imaging studies using a W-Band (75--110 GHz) linearly scanned transceiver in a laboratory environment. The results of the tests are discussed.

Peters, T.J.; McMakin, D.L.; Sheen, D.M.; Chieda, M.A.

1994-08-01T23:59:59.000Z

11

 

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

purpose of this activity is to perform gate checks and inspect the operating mechanisms of the gates at Steel Creek Dam (L-Lake). This will be purpose of this activity is to perform gate checks and inspect the operating mechanisms of the gates at Steel Creek Dam (L-Lake). This will be accomplished by opening the sluice gate and increasing the flow from the normal 4.5 CFS incrementally to a fully open flow of 1400 CFS. Flow will be increased by opening the sluice gate in stages of 50% per hour until the gate is fully open. The gate will remain fully open for 5 minutes, whereupon the gate will be closed to its normal position and flow of 4.5 CFS. After fully open flow for 5 minutes, the gate will be returned to its normal position, reestablishing the 4.5 CFS flow. During the periods of increased flow, water samples will be collected to monitor sediment transport. Any ecological impacts to the receiving stream is expected to be minimal and temporary.

12

 

Broader source: Energy.gov (indexed) [DOE]

The purpose of this activity is to perform gate checks and inspect the operating mechanisms of the gates at Steel Creek Dam (L-Lake). This will be The purpose of this activity is to perform gate checks and inspect the operating mechanisms of the gates at Steel Creek Dam (L-Lake). This will be accomplished by opening the sluice gate and increasing the flow from the normal 4.5 CFS incrementally to a fully open flow of 1400 CFS. Flow will be increased by opening the sluice gate in stages of 50% per hour until the gate is fully open. The gate will remain fully open for 5 minutes, whereupon the gate will be closed to its normal position and flow of 4.5 CFS. After fully open flow for 5 minutes, the gate will be returned to its normal position, reestablishing the 4.5 CFS flow. During the periods of increased flow, water samples will be collected to monitor sediment transport. Any ecological

13

East Gate  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

East East Gate to: Rt. 59 Fermilab Village Main Entrance B u tt e r fi e ld R d . to: Farnsworth Ave, I-88 Kirk Rd. Site 56 Site 55 Buffalo Farm Lederman Science Center (Public Welcome) Prairie Trails Dog Training Area Nature Area Lake Law A.E. Sea Technical Division Illinois Accelerator Research Center Feynman Computing Center Muon Delivery Ring Main Injector Tevatron Test Accelerators Site 37 Site 39 Site 38 Neutrino Experiments Silicon Detector Facility Test Beam Facility DAB Site 50 Wilson Hall & Ramsey Auditorium (Public Welcome) Wilson St. Gate (Deliveries, Employees) NML CMTF A 1 R D D R D B RD S E O LA R D B A T A V I A R D E WILSON ST WILSON ST P IN E S T P O W E R L I N E R D N E O LA R D MCCHESNEY RD A B C D E 5 4 3 2 1 ´ 0 0.5 1 0.25 Miles Trails Public Areas Buildings Roads/Parking Ponds Fermi National Accelerator Laboratory 2013 Fermilab Site Map

14

Optical NAND gate  

SciTech Connect (OSTI)

An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Raring, James (Goleta, CA); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-08-09T23:59:59.000Z

15

Optical NOR gate  

DOE Patents [OSTI]

An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-09-06T23:59:59.000Z

16

Cellular Gate Technology  

E-Print Network [OSTI]

We propose a biochemically plausible mechanism for constructing digital logic signals and gates of significant complexity within living cells. These mechanisms rely largely on co-opting existing biochemical machinery and ...

Knight, Thomas F.

1998-01-05T23:59:59.000Z

17

Advanced insulated gate bipolar transistor gate drive  

DOE Patents [OSTI]

A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

Short, James Evans (Monongahela, PA); West, Shawn Michael (West Mifflin, PA); Fabean, Robert J. (Donora, PA)

2009-08-04T23:59:59.000Z

18

BILL GATES, AIDS GIVING, AND TAX REBATES  

Science Journals Connector (OSTI)

BILL GATES, AIDS GIVING, AND TAX REBATES ... Gates Foundation's support for global health inspires ideas on how to spend the tax rebate ...

PAMELA S. ZURER

2001-07-30T23:59:59.000Z

19

Developing Language Processing Components with GATE  

E-Print Network [OSTI]

Developing Language Processing Components with GATE (a User Guide) For GATE version 3 beta 1 (July.3 Troubleshooting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.4 [D] Get Started

Maynard, Diana

20

from Microsoft's Bill Gates. Summer  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with backing from Microsoft's Bill Gates. Summer fun (pages 4-5) All aboard a bus or train and tour Y-12 and the Secret City. August 2012 Visit us Many phrases can be used to...

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Screening in gated bilayer graphene  

Science Journals Connector (OSTI)

The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias.

L. A. Falkovsky

2009-09-30T23:59:59.000Z

22

Decomposition of Diagonal Hermitian Quantum Gates Using Multiple-Controlled Pauli Z Gates  

E-Print Network [OSTI]

Quantum logic decomposition refers to decomposing a given quantum gate to a set of physically implementable gates. An approach has been presented to decompose arbitrary diagonal quantum gates to a set of multiplexed-rotation gates around z axis. In this paper, a special class of diagonal quantum gates, namely diagonal Hermitian quantum gates, is considered and a new perspective to the decomposition problem with respect to decomposing these gates is presented. It is first shown that these gates can be decomposed to a set that solely consists of multiple-controlled Z gates. Then a binary representation for the diagonal Hermitian gates is introduced. It is shown that the binary representations of multiple-controlled Z gates form a basis for the vector space that is produced by the binary representations of all diagonal Hermitian quantum gates. Moreover, the problem of decomposing a given diagonal Hermitian gate is mapped to the problem of writing its binary representation in the specific basis mentioned above. Moreover, CZ gate is suggested to be the two-qubit gate in the decomposition library, instead of previously used CNOT gate. Experimental results show that the proposed approach can lead to circuits with lower costs in comparison with the previous ones.

Mahboobeh Houshmand; Morteza Saheb Zamani; Mehdi Sedighi; Mona Arabzadeh

2014-05-26T23:59:59.000Z

23

Improvement of the cantilever grooveless gate  

Science Journals Connector (OSTI)

1. The grooveless multisectional gate permits closing openings of any width without dividing the conduit into se...

S. M. Slisskii; P. R. Khlopenkov; E. G. Chernenko

1976-01-01T23:59:59.000Z

24

The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area  

E-Print Network [OSTI]

regarding the connections between gated community territory, safety, and crime experience, this study classifies apartment communities according to the conditions of their gating and fencing: gated communities, perceived gated communities, and non...

Kim, Suk Kyung

2006-10-30T23:59:59.000Z

25

Graduate Automotive Technology Education (GATE) Initiative Awards |  

Broader source: Energy.gov (indexed) [DOE]

Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research institutions. The awardees will focus on three critical automotive technology areas: hybrid propulsion, energy storage, and lightweight materials. By funding curriculum development and expansion as well as laboratory work, GATE allows higher education institutions to develop multidisciplinary training. As a result, GATE promotes the development of a

26

Graduate Automotive Technology Education (GATE) Initiative Awards |  

Broader source: Energy.gov (indexed) [DOE]

Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research institutions. The awardees will focus on three critical automotive technology areas: hybrid propulsion, energy storage, and lightweight materials. By funding curriculum development and expansion as well as laboratory work, GATE allows higher education institutions to develop multidisciplinary training. As a result, GATE promotes the development of a

27

Golden Gate Park Marina Blvd.  

E-Print Network [OSTI]

St. Eureka S.VanNessAve. M arket St. Broadway St. To Golden Gate Bridge H ow ard St. Folsom St. Bryant St. 10 Bridge to/from Oakland C hannel St. 2nd St. Pine St. California St. California St. Clement St. Lake St From the East Bay and Oakland Airport 1. Cross Bay Bridge (I­80 West) 2. Exit on left 2A / 5th St. 3

Derisi, Joseph

28

Fast Quantum Gates for Neutral Atoms  

Science Journals Connector (OSTI)

We propose several schemes for implementing a fast two-qubit quantum gate for neutral atoms with the gate operation time much faster than the time scales associated with the external motion of the atoms in the trapping potential. In our example, the large interaction energy required to perform fast gate operations is provided by the dipole-dipole interaction of atoms excited to low-lying Rydberg states in constant electric fields. A detailed analysis of imperfections of the gate operation is given.

D. Jaksch; J. I. Cirac; P. Zoller; S. L. Rolston; R. Ct; M. D. Lukin

2000-09-04T23:59:59.000Z

29

STATE OF MISSOURI DEPARTMENT OF NATURAL RESOURCES MISSOURI CLEAN...  

National Nuclear Security Administration (NNSA)

of the flood protection levee sluice gate Hydrostatic testing of new piping and tanks using city watercondensate from building heating and cooling units. Flows are...

30

Automatically closing swing gate closure assembly  

DOE Patents [OSTI]

A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

Chang, Shih-Chih (Richland, WA); Schuck, William J. (Richland, WA); Gilmore, Richard F. (Kennewick, WA)

1988-01-01T23:59:59.000Z

31

Quantum logic gates for superconducting resonator qudits  

SciTech Connect (OSTI)

We study quantum information processing using superpositions of Fock states in superconducting resonators as quantum d-level systems (qudits). A universal set of single and coupled logic gates is theoretically proposed for resonators coupled by superconducting circuits of Josephson junctions. These gates use experimentally demonstrated interactions and provide an attractive route to quantum information processing using harmonic oscillator modes.

Strauch, Frederick W. [Williams College, Williamstown, Massachusetts 01267 (United States)

2011-11-15T23:59:59.000Z

32

Journal Article: Gate-tunable exchange coupling between cobalt...  

Office of Scientific and Technical Information (OSTI)

Gate-tunable exchange coupling between cobalt clusters on graphene Citation Details Title: Gate-tunable exchange coupling between cobalt clusters on graphene Authors: Chen, Hua;...

33

The University of Tennessee's GATE Center for Hybrid Systems...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

The University of Tennessee's GATE Center for Hybrid Systems The University of Tennessee's GATE Center for Hybrid Systems 2009 DOE Hydrogen Program and Vehicle Technologies Program...

34

The University of Tennessee's GATE Center for Hybrid Systems...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

The University of Tennessee's GATE Center for Hybrid Systems The University of Tennessee's GATE Center for Hybrid Systems Presentation from the U.S. DOE Office of Vehicle...

35

Gating of Permanent Molds for ALuminum Casting  

SciTech Connect (OSTI)

This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

David Schwam; John F. Wallace; Tom Engle; Qingming Chang

2004-03-30T23:59:59.000Z

36

David A Gates | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Gates A Gates Principal Research Physicist, Stellerator Physics Lead, Advanced Projects Division, Science Focus Group Leader for Macroscopic Stability David Gates is a principal research physicist for the advanced projects division of PPPL, and the stellarator physics leader at the Laboratory. In the latter capacity he leads collaborative efforts with the Wendelstein 7-X and Large Helical Device stellarator projects in Germany and Japan, respectively. Gates is first author of more than a dozen research papers, including an April, 2012, paper that proposed a possible solution to a critical barrier to fusion as a source of energy for generating electricity. Interests Collisional energy transport High-frequency Alfvén waves Fast-ion energy transfer Ideal and resistive magneto-hydrodynamic stability

37

Gate potential control of nanofluidic devices  

E-Print Network [OSTI]

The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in ...

Le Coguic, Arnaud

2005-01-01T23:59:59.000Z

38

Digital gate pulse generator for cycloconverter control  

DOE Patents [OSTI]

The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

Klein, Frederick F. (Monroeville, PA); Mutone, Gioacchino A. (Pleasant Hills, PA)

1989-01-01T23:59:59.000Z

39

Yuanmingyuan East Gate of Peking University  

E-Print Network [OSTI]

Dingxiangyuan Cafeteria SupermarketI Parking 32 Northeast Gate C Building C Swimming Hall East Playground and New Energy Technology 32 Institute of Education Schools & Departments A Foreign Student Affairs

Gu, Jin

40

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Gate: the Construction of the Golden Gate Bridge and HighwayCommittee on Golden Gate Bridge and Highway District,versus the Golden Gate Bridge . . . . . . . . . . . . . . .

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

42

Voltage-gated Ion Channels and Gating Modifier Toxins William A. Catterall,* Sandrine Cestle,  

E-Print Network [OSTI]

;2 Abstract Voltage-gated sodium, calcium, and potassium channels generate electrical signals required and a pore loop. Their pores are formed by the S5/S6 segments and the pore loop between them and are gated and participate in calcium signaling pathways in nonexcitable cells. Because of their importance in many aspects

Paris-Sud XI, Université de

43

Gated SIT vidicon streak tube  

SciTech Connect (OSTI)

A recently developed prototype streak tube designed to produce high gain and resolution by incorporating the streak and readout functions in one envelope thereby minimizing photon-to-change transformations and eliminating external coupling losses is presented. The tube is based upon a grid-gated Silicon-Intensified-Target Vidicon (SITV) with integral Focus Projection Scan (FPS) TV readout. Demagnifying electron optics (m=0.63) in the image section map the 40-mm-diameter photocathode image unto a 25-mm-diameter silicon target where gains greater than or equal to10/sup 3/ are achieved with only 10 KV accelerating voltage. This is compared with much lower gains (approx.50) at much higher voltages (approx.30 KV) reported for streak tubes using phosphor screens. Because SIT technology is well established means for electron imaging in vacuum, such fundamental problems as ''backside thinning'' required for electron imaging unto CCDs do not exist. The high spatial resolution (approx.30 lp/mm), variable scan formats, and high speed electrostatic deflection (250 mm/sup 2/ areas are routinely rastered with 256 scan lines in 1.6 ms) available from FPS readout add versatility not available in CCD devices. Theoretical gain and spatial resolution for this design (developed jointly by Los Alamos National Laboratory and General Electric Co.) are compared with similar calculations and measured data obtained for RCA 73435 streaks fiber optically coupled to (1) 25-mm-diameter SIT FPS vidicons and (2) 40-mm-diameter MCPTs (proximity-focused microchannel plate image intensifier tubes) fiber optically coupled to 18-mm-diameter Sb/sub 2/S/sub 3/ FPS vidicons. Sweep sensitivity, shutter ratio, and record lengths for nanosecond duration (20 to 200 ns) streak applications are discussed.

Dunbar, D.L.; Yates, G.J.; Black, J.P.

1985-01-01T23:59:59.000Z

44

The Defeat of the Golden Gate Authority: Regional Planning and Local Power  

E-Print Network [OSTI]

Regional Politics and the Golden Gate Bridge, Philadelphia:Politics and the Golden Gate Bridge, won the Abel WolmanBridge and the Golden Gate Bridge. Moreover, interregional

Dyble, Louise Nelson

2012-01-01T23:59:59.000Z

45

Heralded quantum gates with integrated error detection in optical cavitites  

E-Print Network [OSTI]

We propose and analyze heralded quantum gates between qubits in optical cavities. They employ an auxiliary qubit to report if a successful gate occurred. In this manner, the errors, which would have corrupted a deterministic gate, are converted into a non-unity probability of success: once successful the gate has a much higher fidelity than a similar deterministic gate. Specifically, we describe that a heralded , near-deterministic controlled phase gate (CZ-gate) with the conditional error arbitrarily close to zero and the success probability that approaches unity as the cooperativity of the system, C, becomes large. Furthermore, we describe an extension to near-deterministic N- qubit Toffoli gate with a favorable error scaling. These gates can be directly employed in quantum repeater networks to facilitate near-ideal entanglement swapping, thus greatly speeding up the entanglement distribution.

J. Borregaard; P. Kmr; E. M. Kessler; A. S. Srensen; M. D. Lukin

2015-01-05T23:59:59.000Z

46

Provably minimal energy using coordinated DVS and power gating  

Science Journals Connector (OSTI)

Both energy and execution speed can be greatly impacted by clock and power gating, nonlinear voltage scaling, and leakage energy. We address the problem of coordinated power gating and dynamic voltage scaling (DVS) to minimize the overall energy consumption ...

Nathaniel A. Conos; Saro Meguerdichian; Foad Dabiri; Miodrag Potkonjak

2014-03-01T23:59:59.000Z

47

Effect of Oxygen on Ni-Silicided FUSI Metal Gate  

E-Print Network [OSTI]

Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

Yu, H.P.

48

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams 9 Accomplishments and Progress: GATE Directly Funded Students (2005-2011) GATE SCHOLAR...

49

Operating conditions of submerged gates and possibilities of improvement  

Science Journals Connector (OSTI)

1. Submerged gates, employed at high-head hydroelectric stations, do not completely meet the demands placed on t...

P. R. Khlopenkov

1971-06-01T23:59:59.000Z

50

Radar Vehicle Detection Within Four Quadrant Gate Crossings  

E-Print Network [OSTI]

Vehicle Detection System for Four-Quadrant Gate Warning Systems and Blocked Crossing Detection. Washington. . . . . Radar Vehicle Detection Within Four Quadrant Gate Crossings Dylan Horne 2014 Global Level and delay but ultimately in loss of life. Radar Vehicle Detection Within Four Quadrant Gate Crossings #12

Illinois at Urbana-Champaign, University of

51

Accuracy and Consistency of Respiratory Gating in Abdominal Cancer Patients  

SciTech Connect (OSTI)

Purpose: To evaluate respiratory gating accuracy and intrafractional consistency for abdominal cancer patients treated with respiratory gated treatment on a regular linear accelerator system. Methods and Materials: Twelve abdominal patients implanted with fiducials were treated with amplitude-based respiratory-gated radiation therapy. On the basis of daily orthogonal fluoroscopy, the operator readjusted the couch position and gating window such that the fiducial was within a setup margin (fiducial-planning target volume [f-PTV]) when RPM indicated beam-ON. Fifty-five pre- and post-treatment fluoroscopic movie pairs with synchronized respiratory gating signal were recorded. Fiducial motion traces were extracted from the fluoroscopic movies using a template matching algorithm and correlated with f-PTV by registering the digitally reconstructed radiographs with the fluoroscopic movies. Treatment was determined to be accurate if 50% of the fiducial area stayed within f-PTV while beam-ON. For movie pairs that lost gating accuracy, a MATLAB program was used to assess whether the gating window was optimized, the external-internal correlation (EIC) changed, or the patient moved between movies. A series of safety margins from 0.5 mm to 3 mm was added to f-PTV for reassessing gating accuracy. Results: A decrease in gating accuracy was observed in 44% of movie pairs from daily fluoroscopic movies of 12 abdominal patients. Three main causes for inaccurate gating were identified as change of global EIC over time (?43%), suboptimal gating setup (?37%), and imperfect EIC within movie (?13%). Conclusions: Inconsistent respiratory gating accuracy may occur within 1 treatment session even with a daily adjusted gating window. To improve or maintain gating accuracy during treatment, we suggest using at least a 2.5-mm safety margin to account for gating and setup uncertainties.

Ge, Jiajia; Santanam, Lakshmi; Yang, Deshan [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)] [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States); Parikh, Parag J., E-mail: pparikh@radonc.wustl.edu [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)

2013-03-01T23:59:59.000Z

52

Gate-controlled ultraviolet photo-etching of graphene edges  

SciTech Connect (OSTI)

The chemical reactivity of graphene under ultraviolet (UV) light irradiation is investigated under positive and negative gate electric fields. Graphene edges are selectively etched when negative gate voltages are applied while the reactivity is significantly suppressed for positive gate voltages. Oxygen adsorption onto graphene is significantly affected by the Fermi level of the final state achieved during previous electrical measurements. UV irradiation after negative-to-positive gate sweeps causes predominant oxygen desorption while UV irradiation after gate sweeps in the opposite direction causes etching of graphene edges.

Mitoma, Nobuhiko; Nouchi, Ryo [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)] [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)

2013-11-11T23:59:59.000Z

53

Improving the fidelity of optical Zeno gates via distillation  

SciTech Connect (OSTI)

We have modeled the Zeno effect controlled-sign gate of Franson et al. [Phys. Rev. A 70, 062302 (2004)] and shown that high two-photon to one-photon absorption ratios, {kappa}, are needed for high fidelity free-standing operation. Hence we instead employ this gate for cluster state fusion, where the requirement for {kappa} is less restrictive. With the help of partially offline one-photon and two-photon distillations, we can achieve a fusion gate with unity fidelity but nonunit probability of success. We conclude that for {kappa}>2200, the Zeno fusion gate will out perform the equivalent linear optics gate.

Leung, Patrick M.; Ralph, Timothy C. [Centre for Quantum Computer Technology, Department of Physics, University of Queensland, Brisbane 4072 (Australia)

2006-12-15T23:59:59.000Z

54

AgraGate Carbon Credits Corporation | Open Energy Information  

Open Energy Info (EERE)

AgraGate Carbon Credits Corporation AgraGate Carbon Credits Corporation Jump to: navigation, search Name AgraGate Carbon Credits Corporation Place Des Moines, Iowa Zip 50266 Product Offset aggregators that work with American farmers, ranchers, and private forest owners, providing clients with cash flows produced by the sale of credits. Offsets are sold on the Chicago Climate Exchange References AgraGate Carbon Credits Corporation[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. AgraGate Carbon Credits Corporation is a company located in Des Moines, Iowa . References ↑ "AgraGate Carbon Credits Corporation" Retrieved from "http://en.openei.org/w/index.php?title=AgraGate_Carbon_Credits_Corporation&oldid=341882"

55

Arbitrary two-qubit computation in 23 elementary gates  

SciTech Connect (OSTI)

We address the problem of constructing quantum circuits to implement an arbitrary two-qubit quantum computation. We pursue circuits without ancilla qubits and as small a number of elementary quantum gates as possible. Our lower bound for worst-case optimal two-qubit circuits calls for at least 17 gates: 15 one-qubit rotations and 2 controlled-NOT (CNOT) gates. We also constructively prove a worst-case upper bound of 23 elementary gates, of which at most four (CNOT gates) entail multiqubit interactions. Our analysis shows that synthesis algorithms suggested in previous work, although more general, entail larger quantum circuits than ours in the special case of two qubits. One such algorithm has a worst case of 61 gates, of which 18 may be CNOT gates.

Bullock, Stephen S.; Markov, Igor L. [Department of Mathematics, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA (United States); Mathematical and Computational Sciences Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8910, USA (United States); Department of Electrical Engineering and Computer Science, The University of Michigan, 1301 Beal Avenue-EECS, Ann Arbor, Michigan 48109-2122, USA (United States)

2003-07-01T23:59:59.000Z

56

Gates, Oregon: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gates, Oregon: Energy Resources Gates, Oregon: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.7562329°, -122.4167483° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":44.7562329,"lon":-122.4167483,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

57

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene  

E-Print Network [OSTI]

Tunable Bandgap in Bilayer Graphene Yuanbo Zhang* 1 , Tsung-gate-tunable bandgap in graphene bilayers with magnitude asbands. In two- dimensional graphene bilayers this bandgap

Zhang, Yuanbo

2010-01-01T23:59:59.000Z

58

Penn State DOE Graduate Automotive Technology Education (Gate...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems 2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program...

59

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...  

Office of Environmental Management (EM)

Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate...

60

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams GATE courses (some newly developed, some based on tailoring content in existing...

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Self-terminating diffraction gates femtosecond X-ray nanocrystallograp...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Self-terminating diffraction gates femtosecond X-ray nanocrystallography measurements Authors: Barty, A., Caleman, C., Aquila, A., Timneanu, N., Lomb, L., White, T. A., Andreasson,...

62

Sandia National Laboratories: ECIS and i-GATE: Innovation Hub...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

support system to accelerate the commercialization of innovative technologies related to green transportation and clean energy. There are now eight i-GATE clients developing fuel...

63

Improved design of a deep vertical-lift gate  

Science Journals Connector (OSTI)

1. Redesigning of the framework of a deep vertical-lift gate by replacing the multibeam framework by a two-beam ...

P. R. Khlopenkov

1986-04-01T23:59:59.000Z

64

Vehicle Technologies Office: Graduate Automotive Technology Education (GATE)  

Broader source: Energy.gov [DOE]

DOE established the Graduate Automotive Technology Education (GATE) Centers of Excellence to provide future generations of engineers and scientists with knowledge and skills in advanced automotive...

65

Cavity-QED-based quantum phase gate  

E-Print Network [OSTI]

are detuned by an amount D from the cavity mode 1, i.e., vbc5n11D . A quantum phase gate with a p phase shift is implemented if the atom in its ground state uc& passes through the cavity such that ~1! the detuning D is equal to g2, and ~2! the interaction...- lowing. The effective Hamiltonian for the interaction, in the di- pole and rotating-wave approximations, is H5H01H1 , ~3! where H05\

Zubairy, M. Suhail; Kim, M.; Scully, Marlan O.

2003-01-01T23:59:59.000Z

66

Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode pairs.  

SciTech Connect (OSTI)

We demonstrate an optical gate architecture using electro-absorption modulator/photodiode pairs to perform AND and NOT functions. Optical bandwidth for both gates reach 40 GHz. Also shown are AND gate waveforms at 40 Gbps.

Tauke-Pedretti, Anna; Overberg, Mark E.; Skogen, Erik J.; Alford, Charles Fred; Sullivan, Charles Thomas; Vawter, Gregory Allen; Peake, Gregory Merwin; Torres, David L.

2010-06-01T23:59:59.000Z

67

Modeling gated neutron images of THD capsules  

SciTech Connect (OSTI)

Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

Wilson, Douglas Carl [Los Alamos National Laboratory; Grim, Gary P [Los Alamos National Laboratory; Tregillis, Ian L [Los Alamos National Laboratory; Wilke, Mark D [Los Alamos National Laboratory; Morgan, George L [Los Alamos National Laboratory; Loomis, Eric N [Los Alamos National Laboratory; Wilde, Carl H [Los Alamos National Laboratory; Oertel, John A [Los Alamos National Laboratory; Fatherley, Valerie E [Los Alamos National Laboratory; Clark, David D [Los Alamos National Laboratory; Schmitt, Mark J [Los Alamos National Laboratory; Merrill, Frank E [Los Alamos National Laboratory; Wang, Tai - Sen F [Los Alamos National Laboratory; Danly, Christopher R [Los Alamos National Laboratory; Batha, Steven H [Los Alamos National Laboratory; Patel, M [LLNL; Sepke, S [LLNL; Hatarik, R [LLNL; Fittinghoff, D [LLNL; Bower, D [LLNL; Marinak, M [LLNL; Munro, D [LLNL; Moran, M [LLNL; Hilko, R [NSTEC; Frank, M [LLNL; Buckles, R [NSTEC

2010-01-01T23:59:59.000Z

68

Sizing sliding gate valves for steam service  

SciTech Connect (OSTI)

Sliding gate valves have been used in thousands of applications during the past 40 yr. While steam control is a common application for these valves, thy are also used to control other gases and liquids. The sliding gate design provides straight-through flow, which minimizes turbulence, vibration, and noise. Seats are self-cleaning and self-lapping to provide a tight, long-lasting shutoff. A correctly sized valve is essential for accurate control. Valve size should be determined by service and system requirements, not by the size of the existing pipeline. Sizing a valve on the basis of pipeline size usually results in an oversized valve and poor control. Generally, regulator size is smaller than pipe size. Whenever complete information is known (inlet pressure, outlet pressure, or pressure drop, and required flow), determine the valve flow coefficient (C{sub v}) using the equations in ANSI/ISA S75.01 or a flow sizing chart. Tables of values for various types of valves are available from manufacturers. However, when complete system requirements are not known, valve oversizing is prevented by determining the design capacity of piping downstream from the valve. The valve should not be sized to pass more flow than the maximum amount the pipe can handle at a reasonable velocity. An example calculation is given.

Bollinger, R. [Jordan Value, Cincinnati, OH (United States)

1995-11-06T23:59:59.000Z

69

A p-cell approach to integer gate sizing  

E-Print Network [OSTI]

cell (p-cell) approach to the generation of layouts of standard gates is presented. The use of constant delay model for gate delay estimation is proposed which eliminates the need for maintaining huge volumes of delay tables in the standard cell library...

Doddannagari, Uday

2009-05-15T23:59:59.000Z

70

A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS  

E-Print Network [OSTI]

A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS Kambiz Rahimi, Chris Diorio, Cecilia, Seattle, Washington ABSTRACT We propose an empirical simulation model for p-channel floating-gate MOS and accurate simulation model for the synaptic devices, many of these circuits were designed using equation

Diorio, Chris

71

E-Print Network 3.0 - aluminum oxide gate Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2 Charge Trapping Characteristics of SONOS Capacitors with Control Gates of Different Work Functions during ProgramErase Operations Summary: ABSTRACT The control gate...

72

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Final Environmental Statement Golden Gate Bridge, HighwayGolden Gate Bridge Highway and Transportation District, Draft Environmental

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

73

Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks  

SciTech Connect (OSTI)

The properties of high-{kappa} metal oxide gate stacks are often determined in the final processing steps following dielectric deposition. We report here results from medium energy ion scattering and x-ray photoelectron spectroscopy studies of oxygen and silicon diffusion and interfacial layer reactions in multilayer gate stacks. Our results show that Ti metallization of HfO{sub 2}/SiO{sub 2}/Si stacks reduces the SiO{sub 2} interlayer and (to a more limited extent) the HfO{sub 2} layer. We find that Si atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for Ti-Si interdiffusion through the high-{kappa} film in the presence of a Ti gate in the crystalline HfO{sub 2} films is also reported. This diffusion is likely to be related to defects in crystalline HfO{sub 2} films, such as grain boundaries. High-resolution transmission electron microscopy and corresponding electron energy loss spectroscopy scans show aggressive Ti-Si intermixing and oxygen diffusion to the outermost Ti layer, given high enough annealing temperature. Thermodynamic calculations show that the driving forces exist for some of the observed diffusion processes.

Goncharova, L. V.; Dalponte, M.; Gustafsson, T.; Celik, O.; Garfunkel, E.; Lysaght, P. S.; Bersuker, G. [Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, 136 Frelinghuysen Rd., Piscataway, New Jersey 08854 (United States); Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, 610 Taylor Rd., Piscataway, New Jersey 08854 (United States); SEMATECH, 2705 Montopolis Dr., Austin, Texas 78741 (United States)

2007-03-15T23:59:59.000Z

74

Micro-mechanical logic for field produceable gate arrays  

E-Print Network [OSTI]

A paradigm of micro-mechanical gates for field produceable logic is explored. A desktop manufacturing system is sought after which is capable of printing functional logic devices in the field. A logic scheme which induces ...

Prakash, Manu

2005-01-01T23:59:59.000Z

75

On the Query Complexity of Perfect Gate Discrimination  

E-Print Network [OSTI]

On the Query Complexity of Perfect Gate Discrimination Giulio Chiribella1 , Giacomo Mauro D'Ariano2 queries are called at different time steps [5]. T Q C © Giulio Chiribella, Giacomo Mauro D

D'Ariano, Giacomo Mauro

76

How many copies are needed for gate discrimination?  

E-Print Network [OSTI]

How many copies are needed for gate discrimination? Giulio Chiribella1 , Giacomo Mauro D'Ariano2 Chiribella, Giacomo Mauro D'Ariano, and Martin Roetteler; licensed under Creative Commons License

D'Ariano, Giacomo Mauro

77

Parameter Mismatches, Chaos Synchronization and Fast Dynamic Logic Gates  

E-Print Network [OSTI]

By using chaos synchronization between non-identical multiple time delay semiconductor lasers with optoelectronic feedbacks, we demonstrate numerically how fast dynamic logic gates can be constructed. The results may be helpful to obtain a computational hardware with reconfigurable properties.

E. M. Shahverdiev

2009-07-02T23:59:59.000Z

78

Single-Step Implementation of Universal Quantum Gates  

SciTech Connect (OSTI)

We construct optimized implementations of the controlled-NOT and other universal two-qubit gates that, unlike many of the previously proposed protocols, are carried out in a single step. The new protocols require tunable interqubit couplings but, in return, show a significant improvement in the quality of gate operations. We make specific predictions for coupled Josephson junction qubits and compare them with the results of recent experiments.

Grigorenko, I.A.; Khveshchenko, D.V. [Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599 (United States)

2005-09-09T23:59:59.000Z

79

Self-aligned submicron gate length gallium arsenide MESFET  

E-Print Network [OSTI]

SELF-ALIGNED SUBMICRON GATE LENGTH GALLIUM ARSENIDE MESFET A Thesis by HSIEN-CHING HUANG Submitted to the Graduate College of Texas ASSAM University in partial fulfillment of the requirement for the degree ol' MASTER OF SCIENCE May 1987... Major Subject: Electrical Engineering SELF-ALIGNED SUBMICRON GATE LENGTH GALLIUM ARSENIDE MESFET A Thesis by HSIEN-CHING HUANG Approved as to style and content by: Mark. H. Weichold (Chairman of Committee) Donald L. Parker (Member) dali L...

Huang, Hsien-Ching

2012-06-07T23:59:59.000Z

80

Ultrafast gating of proximity-focused microchannel-plate intensifiers  

SciTech Connect (OSTI)

Proximity-focused, microchannel-plate (MCP) image intensifiers have been used at Los Alamos for many years to allow single frame film and video exposure times in the range of 2.5 to 10 ns. There is now a program to reduce gating times to < 1 ns. This paper reviews previous work and the problems in achieving good resolution with gating times of < 1 ns. The key problems involve applying fast electrical gating signals to the tube elements. We present computer modeling studies of the combined tube, tube connection, and pulser system and show that low photocathode surface resistivity must be obtained to permit fast gating between the photocathode and the MCP input. We discuss ways of making low-resistivity S20 photocathodes, using gallium arsenide photocathodes, and various means of gating the tubes. A variety of pulser designs are being experimentally evaluated including spark gaps, avalanche transistors, Krytron tubes with sharpening gaps, step recovery diodes, and photoconductive elements (PCEs). The results of these studies are presented. Because of the high capacitances involved in most gating schemes, the tube connection geometry must be of low-impedance design, and our solution is presented. Finally, ways of testing these high-speed camera systems are discussed.

Lundy, A.S.; Iverson, A.E.

1982-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Accelerometer-Based method for extracting respiratory and cardiac gating information for dual gating during nuclear medicine imaging  

Science Journals Connector (OSTI)

Both respiratory and cardiac motions reduce the quality and consistency of medical imaging specifically in nuclear medicine imaging. Motion artifacts can be eliminated by gating the image acquisition based on the respiratory phase and cardiac contractions ...

Mojtaba Jafari Tadi, Tero Koivisto, Mikko Pnkl, Ari Paasio

2014-01-01T23:59:59.000Z

82

Ligand-gated Diffusion Across the Bacterial Outer Membrane  

SciTech Connect (OSTI)

Ligand-gated channels, in which a substrate transport pathway is formed as a result of the binding of a small-molecule chemical messenger, constitute a diverse class of membrane proteins with important functions in prokaryotic and eukaryotic organisms. Despite their widespread nature, no ligand-gated channels have yet been found within the outer membrane (OM) of Gram-negative bacteria. Here we show, using in vivo transport assays, intrinsic tryptophan fluorescence and X-ray crystallography, that high-affinity (submicromolar) substrate binding to the OM long-chain fatty acid transporter FadL from Escherichia coli causes conformational changes in the N terminus that open up a channel for substrate diffusion. The OM long-chain fatty acid transporter FadL from E. coli is a unique paradigm for OM diffusion-driven transport, in which ligand gating within a {beta}-barrel membrane protein is a prerequisite for channel formation.

B Lepore; M Indic; H Pham; E Hearn; D Patel; B van den Berg

2011-12-31T23:59:59.000Z

83

Sensory gating in intracranial recordings The role of phase locking  

Science Journals Connector (OSTI)

For patients with schizophrenia, a deficient gating (or filtering) of sensory input has been described. One major approach to study this sensory gating is to measure event-related potentials (ERPs) in response to paired clicks. In these experiments, sensory gating is quantified as amplitude reduction of the ERP components P50 and N100 from the 1st to the 2nd stimulus. In ERP studies brain electrical signals are averaged over single trials. Alterations in phase locking might be one factor contributing to the observed deficits in sensory gating, but findings have been inconclusive as yet. In particular, the contribution of different frequency bands to the deficit required further investigation. We studied N100 gating by intracranial recordings in a sample of epilepsy patients and subdivided the group into good and poor gators of the intracranial ERP component N100. Data were evaluated by frequency specific wavelet-based phase and power analyses. Poor N100 gators had an increased phase locking in the frequency range from 6.015.1Hz after the 2nd stimulus, as compared to good gators. Other group differences were apparent already before the 2nd stimulus. Poor gators had less phase locked beta band activity (20.230.0Hz) than good gators 200315ms after the onset of the 1st stimulus. Within the group of poor gators, lower values of phase locking in this frequency range were also associated with lower gating ratios. The reduced beta band response in response to the 1st stimulus may reflect poorer memory encoding of the 1st stimulus in poor gators. This in turn might lead to increased demands to process the 2nd stimulus.

Timm Rosburg; Peter Trautner; Jrgen Fell; Karen Anne Moxon; Christian E. Elger; Nash N. Boutros

2009-01-01T23:59:59.000Z

84

On the Role of Hadamard Gates in Quantum Circuits  

E-Print Network [OSTI]

We study a reduced quantum circuit computation paradigm in which the only allowable gates either permute the computational basis states or else apply a "global Hadamard operation", i.e. apply a Hadamard operation to every qubit simultaneously. In this model, we discuss complexity bounds (lower-bounding the number of global Hadamard operations) for common quantum algorithms : we illustrate upper bounds for Shor's Algorithm, and prove lower bounds for Grover's Algorithm. We also use our formalism to display a gate that is neither quantum-universal nor classically simulable, on the assumption that Integer Factoring is not in BPP.

Dan Shepherd

2005-08-22T23:59:59.000Z

85

Zirconium-doped tantalum oxide high-k gate dielectric films  

E-Print Network [OSTI]

layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al...

Tewg, Jun-Yen

2005-02-17T23:59:59.000Z

86

Realizing Three-Qubit Quantum-Gate Operation in a Cavity-QED System  

Science Journals Connector (OSTI)

Three-qubit quantum phase-gate and C2-NOT gate realization in a cavity-QED system is proposed where highly detuned field modes interact with a four-level system in an...

Joshi, Amitabh; Xiao, Min

87

Deep gates of a new design for closure of diversion tunnels  

Science Journals Connector (OSTI)

1. The discussed gate has a number of merits: the absence of deformation of the stream (except for deformation w...

P. R. Khlopenkov

1968-02-01T23:59:59.000Z

88

Power and thermal effects of SRAM vs. Latch-Mux design styles and clock gating choices  

Science Journals Connector (OSTI)

This paper studies the impact on energy efficiency and thermal behavior of design style and clock-gating style in queue and array structures. These structures are major sources of power dissipation, and both design styles and various clock gating schemes ... Keywords: architecture, clock gating, power, temperature

Yingmin Li; Mark Hempstead; Patrick Mauro; David Brooks; Zhigang Hu; Kevin Skadron

2005-08-01T23:59:59.000Z

89

Geometric phase gate on an optical transition for ion trap quantum computation C. F. Roos,2  

E-Print Network [OSTI]

Geometric phase gate on an optical transition for ion trap quantum computation K. Kim,1 C. F. Roos We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric

Blatt, Rainer

90

Steric Gate Variants of UmuC Confer UV Hypersensitivity on Escherichia coli  

Science Journals Connector (OSTI)

...on survival. FIG. 1. The steric gate residue of UmuC is predicted to approach...blue), and residues F10 and steric gate Y11 (red). The backbone of UmuC is shown...Homo sapiens. FIG. 2. The steric gate Y11 and F10 variants in UmuC cause...

Brenna W. Shurtleff; Jaylene N. Ollivierre; Mohammad Tehrani; Graham C. Walker; Penny J. Beuning

2009-05-29T23:59:59.000Z

91

Simple Template-Based Method to Produce Bradbury-Nielsen Gates  

E-Print Network [OSTI]

ARTICLES Simple Template-Based Method to Produce Bradbury-Nielsen Gates Oh Kyu Yoon, Ignacio A University, Stanford, California, USA A Bradbury-Nielsen gate (BNG) consists of two interleaved as a Bradbury-Nielsen gate (BNG), which consists of two interleaved and electrically isolated sets of wires

Zare, Richard N.

92

Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas  

Science Journals Connector (OSTI)

We address some of the plasma issues encountered for ultimate silicon gate patterning that should be fixed in order to establish the long term viability of plasma processes in integrated circuits manufacturing. For sub-100-nm gate dimensions, one of ... Keywords: CMOS scaling, critical dimension control, gate patterning, plasma etching

O. Joubert; E. Pargon; J. Foucher; X. Detter; G. Cunge; L. Vallier

2003-09-01T23:59:59.000Z

93

Engineering Light-Gated Ion Channels Matthew R. Banghart, Matthew Volgraf, and Dirk Trauner*  

E-Print Network [OSTI]

Engineering Light-Gated Ion Channels Matthew R. Banghart, Matthew Volgraf, and Dirk Trauner covers the molecular principles that guide the engineering of light-gated ion channels for applicationsVised Manuscript ReceiVed NoVember 6, 2006 ABSTRACT: Ion channels are gated by a variety of stimuli, including

Trauner, Dirk

94

Case Studies on Clock Gating and Local Routign for VLSI Clock Mesh  

E-Print Network [OSTI]

. This thesis deals with the introduction of 'reconfigurability' by using control structures like transmission gates between sub-clock meshes, thus enabling clock gating in clock mesh. By using the optimum value of size for PMOS and NMOS of transmission gate...

Ramakrishnan, Sundararajan

2010-10-12T23:59:59.000Z

95

Life cycle inventory for palm based plywood: A gate-to-gate case study  

Science Journals Connector (OSTI)

The oil palm industry heavily relies on the world market. It is essential to ensure that the oil palm industry is ready to meet the demands and expectation of these overseas customers on the environmental performance of the oil palm industry. Malaysia produces 13.9 million tons of oil palm biomass including oil palm trunk (OPT) frond and empty fruits bunches (EFB) annually. OPT felled in some oil palm plantations during replanting is transported to various industries and one such industry is the plywood factories. In order to gauge the environmental performance of the use of OPT as plywood a Life Cycle Assessment (LCA) study was conducted for palm based plywood. LCA is an important tool to assess the environmental performance of a product or process. Life cycle inventory (LCI) is the heart of a LCA study. This LCI study has a gate-to-gate system boundary and the functional unit is 1 m3 palm plywood produced and covers three types of plywood; Moisture Resistance Plywood (MR) Weather Boiling Proof Plywood Grade 1 (WBP Grade 1) at Factory D and Weather Boiling Proof Plywood Grade 2 (WBP Grade 2) at Factory E. Both factories use two different types of drying processes; conventional drying at Factory D and kiln drying at Factory E. This inventory data was collected from two factories (D and E) representing 40% of Malaysia palm plywood industry. The inputs are mainly the raw materials which are the oil palm trunks and tropical wood veneers and the energy from diesel and electricity from grid which is mainly used for the drying process. The other inputs include water urea formaldehyde phenol formaldehyde flour and melamine powder. The outputs are the biomass waste which consists of oil palm trunk off-cut and emission from boiler. Generally all types of plywood production use almost same materials and processing methods in different quantities. Due to the different process efficiency Factory D uses less input of raw materials and energy compared to Factory E.

Shamim Ahmad; Ismail Sahid; Vijaya Subramaniam; Halimah Muhamad; Anis Mokhtar

2013-01-01T23:59:59.000Z

96

TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid  

E-Print Network [OSTI]

TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid verification using node elimination proposes a novel approach to systematically reduce the power grid and accurately compute an upper bound on the voltage drops at power grid nodes that are retained. Furthermore, acriterion for the safety of nodes

Najm, Farid N.

97

Compressed sensing quantum process tomography for superconducting quantum gates  

E-Print Network [OSTI]

We apply the method of compressed sensing (CS) quantum process tomography (QPT) to characterize quantum gates based on superconducting Xmon and phase qubits. Using experimental data for a two-qubit controlled-Z gate, we obtain an estimate for the process matrix $\\chi$ with reasonably high fidelity compared to full QPT, but using a significantly reduced set of initial states and measurement configurations. We show that the CS method still works when the amount of used data is so small that the standard QPT would have an underdetermined system of equations. We also apply the CS method to the analysis of the three-qubit Toffoli gate with numerically added noise, and similarly show that the method works well for a substantially reduced set of data. For the CS calculations we use two different bases in which the process matrix $\\chi$ is approximately sparse, and show that the resulting estimates of the process matrices match each ther with reasonably high fidelity. For both two-qubit and three-qubit gates, we characterize the quantum process by not only its process matrix and fidelity, but also by the corresponding standard deviation, defined via variation of the state fidelity for different initial states.

Andrey V. Rodionov; Andrzej Veitia; R. Barends; J. Kelly; Daniel Sank; J. Wenner; John M. Martinis; Robert L. Kosut; Alexander N. Korotkov

2014-07-03T23:59:59.000Z

98

Quantification of Priority-OR gates in temporal fault trees  

Science Journals Connector (OSTI)

Fault Tree Analysis has been used in reliability engineering for many decades and has seen various modifications to enable it to analyse fault trees with dynamic and temporal gates so it can incorporate sequential failure in its analysis. Pandora is ... Keywords: Markov chains, Monte Carlo, Pandora, dynamic fault trees, fault trees, safety

Ernest Edifor; Martin Walker; Neil Gordon

2012-09-01T23:59:59.000Z

99

Quantum phase gate for optical qubits with cavity quantum optomechanics  

E-Print Network [OSTI]

We show that a cavity optomechanical system formed by a mechanical resonator simultaneously coupled to two modes of an optical cavity can be used for the implementation of quantum phase gate between optical qubits associated with the two intracavity modes. The scheme is realizable for sufficiently strong single-photon optomechanical coupling in the resolved sideband regime, and is robust against cavity losses.

Muhammad Asjad; Paolo Tombesi; David Vitali

2015-01-16T23:59:59.000Z

100

Design, Simulation and Modeling of Insulated Gate Bipolar Transistor  

E-Print Network [OSTI]

The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions...

Gupta, Kaustubh

2013-07-09T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Advanced Gate Drive for the SNS High Voltage Converter Modulator  

SciTech Connect (OSTI)

SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

2009-05-07T23:59:59.000Z

102

Controlling attosecond electron dynamics by phase-stabilized polarization gating  

E-Print Network [OSTI]

LETTERS Controlling attosecond electron dynamics by phase-stabilized polarization gating I. J. SOLA the signature of a single return of the electron wavepacket over a large range of energies. This temporally (low energy) and cut-off (high energy) harmonics, specific focusing conditions ensure that only

Loss, Daniel

103

Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches  

SciTech Connect (OSTI)

The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that determine the efficiency of this process are investigated, providing insights for the development of an all-optical gate.

Prs, Martti; Khler, Jrgen, E-mail: juergen.koehler@uni-bayreuth.de [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany)] [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany); Grf, Katja; Bauer, Peter; Thelakkat, Mukundan [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)] [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)

2013-11-25T23:59:59.000Z

104

Anti-coherence based molecular electronics: XOR-gate response  

E-Print Network [OSTI]

Anti-coherence based molecular electronics: XOR-gate response Roi Baera,*, Daniel Neuhauserb 90095-1569, USA Received 18 August 2001 Abstract We point out and simulate the possible utility of anti-coherence phase condition on the loop structure, the transfer would be anti- coherent. By applying one or two

Baer, Roi

105

Fabrication of gated nano electron source for vacuum nanoelectronics  

Science Journals Connector (OSTI)

Abstract Many kinds of attractive new applications, such as image sensors, stationary X-ray sources, and the column-less SEM, are investigated as post field emission displays that use a gated nano electron source. The fabrication of the gated nano electron source is overviewed from the conventional method to the latest one, especially in regarding to the gate formation process. Multi-stacked gate electrode formation using an etch-back method was developed recently, which is a very attractive method for generating a focused electron beam. The traditional Spindt-type emitter fabrication method is also being improved to the one that is easier and applicable to large area substrates. Using a double-layered photoresist as a lift-off layer and using HiPIMS sputtering instead of an e-beam evaporator was proposed. Thin film-type FEA fabrication is also improved to make vertically standing thin film by ion irradiation, which is applicable for making an emitter array on a large sized substrate.

Masayoshi Nagao; Tomoya Yoshida

2015-01-01T23:59:59.000Z

106

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors  

E-Print Network [OSTI]

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

D. J. Carrad; A. M. Burke; R. W. Lyttleton; H. J. Joyce; H. H. Tan; C. Jagadish; K. Storm; H. Linke; L. Samuelson; A. P. Micolich

2014-04-08T23:59:59.000Z

107

Encapsulated gate-all-around InAs nanowire field-effect transistors  

SciTech Connect (OSTI)

We report the fabrication of lateral gate-all-around InAs nanowire field-effect transistors whose gate overlaps the source and drain electrodes and thus fully encapsulates the nanowire channel. They feature large drive current and transconductance that surpass those of conventional non-gate-overlap devices. The improved device characteristics can be attributed to the elimination of access resistance associated with ungated segments between the gate and source/drain electrodes. Our data also reveal a correlation between the normalized transconductance and the threshold voltage, which points to a beneficial effect of our wet-etching procedure performed prior to the atomic-layer-deposition of the gate dielectric.

Sasaki, Satoshi, E-mail: sasaki.s@lab.ntt.co.jp; Tateno, Kouta; Zhang, Guoqiang; Suominen, Henri; Harada, Yuichi; Saito, Shiro; Fujiwara, Akira; Sogawa, Tetsuomi; Muraki, Koji [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)] [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

2013-11-18T23:59:59.000Z

108

Presented at the 2003 USSD Annual Lecture, Charleston, South Carolina. April 2003. SPILLWAY GATE RELIABILITY IN THE CONTEXT OF  

E-Print Network [OSTI]

and operations are listed and illustrated through their application to the Thames Flood Barrier gates

Bowles, David S.

109

South Gate, California: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gate, California: Energy Resources Gate, California: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.954737°, -118.2120161° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.954737,"lon":-118.2120161,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

110

Ocean Gate, New Jersey: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gate, New Jersey: Energy Resources Gate, New Jersey: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 39.926785°, -74.1337496° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.926785,"lon":-74.1337496,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

111

Synthesis of Reversible Functions Beyond Gate Count and Quantum Cost  

E-Print Network [OSTI]

Many synthesis approaches for reversible and quantum logic have been proposed so far. However, most of them generate circuits with respect to simple metrics, i.e. gate count or quantum cost. On the other hand, to physically realize reversible and quantum hardware, additional constraints exist. In this paper, we describe cost metrics beyond gate count and quantum cost that should be considered while synthesizing reversible and quantum logic for the respective target technologies. We show that the evaluation of a synthesis approach may differ if additional costs are applied. In addition, a new cost metric, namely Nearest Neighbor Cost (NNC) which is imposed by realistic physical quantum architectures, is considered in detail. We discuss how existing synthesis flows can be extended to generate optimal circuits with respect to NNC while still keeping the quantum cost small.

Robert Wille; Mehdi Saeedi; Rolf Drechsler

2010-04-26T23:59:59.000Z

112

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

113

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

114

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

115

Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices  

DOE Patents [OSTI]

A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

2001-01-01T23:59:59.000Z

116

Simple trapped-ion architecture for high-fidelity Toffoli gates  

SciTech Connect (OSTI)

We discuss a simple architecture for a quantum toffoli gate implemented using three trapped ions. The gate, which, in principle, can be implemented with a single laser-induced operation, is effective under rather general conditions and is strikingly robust (within any experimentally realistic range of values) against dephasing, heating, and random fluctuations of the Hamiltonian parameters. We provide a full characterization of the unitary and noise-affected gate using three-qubit quantum process tomography.

Borrelli, Massimo [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Mazzola, Laura [Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland); School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Paternostro, Mauro [School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Maniscalco, Sabrina [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland)

2011-07-15T23:59:59.000Z

117

Geometric phase gate on an optical transition for ion trap quantum computation  

Science Journals Connector (OSTI)

We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric dipole transitions, the gate has many interesting properties, such as very low spontaneous emission rates, applicability to magnetic field insensitive states, and use of a co-propagating laser beam geometry. We estimate that current technology allows for infidelities of around 10?4.

K. Kim; C. F. Roos; L. Aolita; H. Hffner; V. Nebendahl; R. Blatt

2008-05-08T23:59:59.000Z

118

Geometric phase gate on an optical transition for ion trap quantum computation  

E-Print Network [OSTI]

We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric dipole transitions, the gate has many interesting properties, such as very low spontaneous emission rates, applicability to magnetic field insensitive states, and use of a co-propagating laser beam geometry. We estimate that current technology allows for infidelities of around 10$^{-4}$.

K. Kim; C. F. Roos; L. Aolita; H. Haeffner; V. Nebendahl; R. Blatt

2007-10-21T23:59:59.000Z

119

Increase of the reliability and cost effectiveness of the Leningrad flood control gates  

SciTech Connect (OSTI)

This paper presents the results of a detailed analysis of competing designs of rolling gates and floating radial gates for the Leningrad flood control system and describes from a hydraulic engineering standpoint those aspects of the gate designs which led to the conclusion that they did not have sufficient reliability for the loads encountered under flood conditions. Specific design revisions which take into account not only the flood loads but also the navigation and dock parts of the structures were investigated and recommended.

Khlopenkov, P.R.

1988-06-01T23:59:59.000Z

120

Micromachined Bradbury-Nielsen Gates Ignacio A. Zuleta, Griffin K. Barbula, Matthew D. Robbins, Oh Kyu Yoon, and Richard N. Zare*  

E-Print Network [OSTI]

Micromachined Bradbury-Nielsen Gates Ignacio A. Zuleta, Griffin K. Barbula, Matthew D. Robbins, Oh 94305-5080 Bradbury-Nielsen gates (BNGs) are a standard way for gating or steering beams of charged for axial gating of an ion beam is referred to as a Bradbury-Nielsen gate (BNG).6 Depending on the kinetic

Zare, Richard N.

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape  

Broader source: Energy.gov [DOE]

Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

122

Reversible Switching of an Optical Gate Using Phase-Change Material and Si Waveguide  

Science Journals Connector (OSTI)

Optical gate switch that uses Ge2Sb2Te5phase-change material was fabricated and the reversible switching has been...

Ikuma, Yuichiro; Shoji, Yuya; Kuwahara, Masashi; Wang, Xiaomin; Kintaka, Kenji; Kawashima, Hitoshi; Tanaka, Daiki; Tsuda, Hiroyuki

123

Development of a time-gated system for Raman spectroscopy of biological samples  

Science Journals Connector (OSTI)

A time gating system has been constructed that is capable of recording high quality Raman spectra of highly fluorescing biological samples while operating below the photodamage...

Knorr, Florian; Smith, Zachary J; Wachsmann-Hogiu, Sebastian

2010-01-01T23:59:59.000Z

124

Locally observable conditions for the successful implementation of entangling multi-qubit quantum gates  

E-Print Network [OSTI]

The information obtained from the operation of a quantum gate on only two complementary sets of input states is sufficient to estimate the quantum process fidelity of the gate. In the case of entangling gates, these conditions can be used to predict the multi qubit entanglement capability from the fidelities of two non-entangling local operations. It is then possible to predict highly non-classical features of the gate such as violations of local realism from the fidelities of two completely classical input-output relations, without generating any actual entanglement.

Holger F. Hofmann; Ryo Okamoto; Shigeki Takeuchi

2005-09-01T23:59:59.000Z

125

Synthesis of Reversible Functions Using Various Gate Libraries and Design Specifications.  

E-Print Network [OSTI]

?? This dissertation is devoted to efficient automated logic synthesis of reversible circuits using various gate types and initial specifications. These Reversible circuits are of (more)

Alhagi, Nouraddin

2010-01-01T23:59:59.000Z

126

Coherence-Controlled Holographic Microscopy for Coherence-Gated Quantitative Phase Imaging  

Science Journals Connector (OSTI)

We show that the use of incoherent illumination in coherence-controlled holographic microscopy (CCHM) enables coherence-gated quantitative phase imaging of objects through turbid...

Slaby, Tomas; Kolman, Pavel; Dostal, Zbynek; Antos, Martin; Lostak, Martin; Krizova, Aneta; Collakova, Jana; Kollarova, Vera; Slaba, Michala; Vesely, Pavel; Chmelik, Radim

127

Rapid optimization of working parameters of microwave-driven multilevel qubits for minimal gate leakage  

E-Print Network [OSTI]

.0134 is the interaction between the qubits, .0020 .0136 M=L is the coupling constant, and x i , x ei , and h.0133x i .0134 (i .0136 1 and 2) are the canonical coordinate, normal- ized external flux, and Hamiltonian of the ith single qubit. Note... for the gate at the point B. The quality of a gate can be described by gate fidelity F .0017 Trace.0137.0026 P .0026 I .0138, where .0026 P and.0026 I are the physical and ideal density matrices after gate operation and the overline denotes averaging over all...

Zhou, Zhongyuan; Han, Siyuan; Chu, Shih-I

2005-09-16T23:59:59.000Z

128

E-Print Network 3.0 - affects voltage-gated calcium Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

modulate neuronal voltage-gated calcium cur- rents, we performed a whole-cell patch... that hippocampal neurons in an astrocyte-enriched environment show augmentation of...

129

Use of high-level design information for enabling automation of fine-grained power gating  

E-Print Network [OSTI]

Leakage power reduction through power gating requires considerable design and verification effort. Conventionally, extensive analysis is required for dividing a heterogeneous design into power domains and generating control ...

Agarwal, Abhinav

2014-01-01T23:59:59.000Z

130

SiC Power MOSFET with Improved Gate Dielectric  

SciTech Connect (OSTI)

In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

2010-08-23T23:59:59.000Z

131

Alternative Gate Dielectrics on Semiconductors for MOSFET Device Applications  

SciTech Connect (OSTI)

We have investigated the synthesis and properties of deposited oxides on Si and Ge for use as alternative gate dielectrics in MOSFET applications. The capacitance and leakage current behavior of polycrystalline Y{sub 2}O{sub 3} films synthesized by pulsed-laser deposition is reported. In addition, we also discuss the growth of epitaxial oxide structures. In particular, we have investigated the use of silicide termination for oxide growth on (001) Si using laser-molecular beam epitaxy. In addition, we discuss a novel approach involving the use of hydrogen to eliminate native oxide during initial dielectric oxide nucleation on (001) Ge.

Norton, D.P.; Budai, J.D.; Chisholm, M.F.; Pennycook, S.J.; McKee, R.; Walker, F.; Lee, Y.; Park, C.

1999-12-06T23:59:59.000Z

132

Three-qubit phase gate based on cavity quantum electrodynamics  

E-Print Network [OSTI]

- mentation, such as linear ion traps #4;1#5;, liquid-state nuclear magnetic resonance #1;NMR#2; #4;2#5;, and cavity QED systems #4;3,4#5;. There are three requirements for implementing a quantum computer: Efficient manipulation and read out of an indi.... #4;6#5;, a scheme to implement a two-qubit quantum phase gate and one-qubit unitary operation implementation based on cavity QED was described. They choose the Fock states #6;0#7; and #6;1#7; of a high Q cavity mode as the two logical states of a...

Chang, Jun-Tao; Zubairy, M. Suhail

2008-01-01T23:59:59.000Z

133

Directions to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North  

E-Print Network [OSTI]

on Vermont Avenue Turn right at 36th Place/Downey Way and enter USC at Gate 6 5 (Golden State/Santa AnaDirections to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North Take the Exposition Boulevard exit Go straight through the 37th Street light. Keep left Go under the freeway bridge and across

Valero-Cuevas, Francisco

134

Electrochemical gating of individual single-wall carbon nanotubes observed by electron transport measurements and resonant  

E-Print Network [OSTI]

, the Fermi energy of a nanotube can be changed, as ions from the solution accu- mulate on the surface gating of nanotubes has been shown previously to effectively shift the Fermi energy of semiconducting with the laser energy, we can observe the Raman spectrum from a single SWNT.7 Electrochemical gating of nanotubes

135

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET)  

E-Print Network [OSTI]

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P- type 4H Silicon-Carbide 13,41, a wide, Silicon Carbide, Field effect transistor, Simulation. I. INTRODUCTION TH E BMFET operates in bipolar mode

Kumar, M. Jagadesh

136

Impact of tide gates on the migration of juvenile sea trout, Salmo trutta  

Science Journals Connector (OSTI)

Abstract As part of flood protection and land reclamation schemes, tide gates allow rivers to discharge to sea when open, and prevent salt water intrusion when closed. Their impact on diadromous fish migration between essential spawning and rearing habitats, and the effectiveness of mitigation measures, have received little consideration. The River Meon, UK, discharges to sea through four top-hung counterbalanced tide gates. In March 2012, the gates were replaced with new ones of the same design, but with an orifice installed in two of them partly to improve fish passage. Sixty downstream migrating juvenile sea trout, Salmo trutta, were trapped approximately 4.9km upstream of the tidal limit and tagged with acoustic transmitters in April 2011 (n=30) and 2012 (n=30). Tagged individuals were detected by acoustic receivers placed near the tide gates before (year 1) and after (year 2) orifice installation. Of the fish that approached the tide gates, 95.8% and 100.0% successfully passed in years 1 and 2, respectively. The speed of migration at the gates was slower than for upstream and downstream reaches, and was positively related to percentage of time the gates were open. Presence of the orifices did not influence delay. Overall, top-hung tide gates delayed sea trout migration, potentially increasing the risk of predation and energy expenditure during the vulnerable juvenile life stage.

G.V. Wright; R.M. Wright; P.S. Kemp

2014-01-01T23:59:59.000Z

137

Coherent molecular transistor: Control through variation of the gate wave function  

SciTech Connect (OSTI)

In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

Ernzerhof, Matthias, E-mail: Matthias.Ernzerhof@UMontreal.ca [Dpartement de Chimie, Universit de Montral, C.P. 6128 Succursale A, Montral, Quebec H3C 3J7 (Canada)] [Dpartement de Chimie, Universit de Montral, C.P. 6128 Succursale A, Montral, Quebec H3C 3J7 (Canada)

2014-03-21T23:59:59.000Z

138

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto  

E-Print Network [OSTI]

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto , Veronica Keywords: Schottky barrier Ambipolarity Si nanowire Stencil lithography FET Silicide a b s t r a c t We chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning

De Micheli, Giovanni

139

Surface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission performance  

E-Print Network [OSTI]

the merits of molybdenum Mo silicide formation on gated polycrystalline silicon poly-Si field emitters. Metal, any metal silicide can be adopted without reSurface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission

Lee, Jong Duk

140

Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films  

E-Print Network [OSTI]

nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer...

Lin, Chen-Han

2012-10-19T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Optimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa Balakrishnan  

E-Print Network [OSTI]

at Boston's Logan International Airport in the US are used to illustrate the advantages of the proposed for Boston Logan International Airport (BOS) is shown in Fig. 1. Gates at each of the four main terminalsOptimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa

Gummadi, Ramakrishna

142

Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent regime  

E-Print Network [OSTI]

Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent of a disordered nanowire in the presence of an external gate electrode which can be used for depleting the carrier and Gardner for describing the energy dependence of the localization length around the band edges allowing us

Recanati, Catherine

143

Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1  

E-Print Network [OSTI]

Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

Shepard, Kenneth

144

Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe*  

E-Print Network [OSTI]

Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe to create a number of microfluidic analogs to electronic circuit components. Three classes of components are demonstrated: (1) OR/AND, NOR/NAND, and XNOR digital microfluidic logic gates; (2) programmable, autonomous

Beebe, David J.

145

Asynchronous Gate-Diffusion----Input (GDI) Circuits Arkadiy Morgenshtein, Michael Moreinis and Ran Ginosar  

E-Print Network [OSTI]

1 Asynchronous Gate-Diffusion----Input (GDI) Circuits Arkadiy Morgenshtein, Michael Moreinis, Israel [ran@ee.technion.ac.il] Abstract: Novel Gate-Diffusion Input (GDI) circuits are applied to asynchronous design. A variety of GDI implementations are compared with typical CMOS asynchronous circuits

Ginosar, Ran

146

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip  

E-Print Network [OSTI]

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate transformer integrated in a CMOS silicon die together with the gate driver and other required functions frequency through the coreless transformer. The chosen design methodology will be explained and experimental

Paris-Sud XI, Université de

147

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MedGate Occupational MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) More Documents & Publications PIA - Savannah River Nuclear Solution (SRNS) Procurement Cycle System (PCS) PIA - Savannah River Nuclear Solutions (SRNS) Human Resource Management

148

Optimal control for fast and high-fidelity quantum gates in coupled superconducting flux qubits  

E-Print Network [OSTI]

We apply the quantum optimal control theory based on the Krotov method to implement single-qubit $X$ and $Z$ gates and two-qubit CNOT gates for inductively coupled superconducting flux qubits with fixed qubit transition frequencies and fixed off-diagonal qubit-qubit coupling. Our scheme that shares the same advantage of other directly coupling schemes requires no additional coupler subcircuit and control lines. The control lines needed are only for the manipulation of individual qubits (e.g., a time-dependent magnetic flux or field applied on each qubit). The qubits are operated at the optimal coherence points and the gate operation times (single-qubit gates $magnetic-field-induced single-qubit interactions and two-qubit couplings. The effect of leakage to higher energy-level states and the effect of qubit decoherence on the quantum gate operations are also discussed.

Shang-Yu Huang; Hsi-Sheng Goan

2014-06-30T23:59:59.000Z

149

Examination of geometric and dosimetric accuracies of gated step-and-shoot intensity modulated radiation therapy  

SciTech Connect (OSTI)

Due to the complicated technical nature of gated radiation therapy, electronic and mechanical limitations may affect the precision of delivery. The purpose of this study is to investigate the geometric and dosimetric accuracies of gated step-and-shoot intensity modulated radiation treatments (SS-IMRT). Unique segmental MLC plans are designed, which allow quantitative testing of the gating process. Both ungated and gated deliveries are investigated for different dose sizes, dose rates, and gating window times using a commercial treatment system (Varian Trilogy) together with a respiratory gating system [Varian Real-Time Position Management system]. Radiographic film measurements are used to study the geometric accuracy, where it is found that with both ungated and gated SS-IMRT deliveries the MLC leaf divergence away from planned is less than or equal to the MLC specified leaf tolerance value for all leafs (leaf tolerance being settable from 0.5-5 mm). Nevertheless, due to the MLC controller design, failure to define a specific leaf tolerance value suitable to the SS-IMRT plan can lead to undesired geometric effects, such as leaf motion of up to the maximum 5 mm leaf tolerance value occurring after the beam is turned on. In this case, gating may be advantageous over the ungated case, as it allows more time for the MLC to reach the intended leaf configuration. The dosimetric precision of gated SS-IMRT is investigated using ionization chamber methods. Compared with the ungated case, it is found that gating generally leads to increased dosimetric errors due to the interruption of the 'overshoot phenomena.' With gating the average timing deviation for intermediate segments is found to be 27 ms, compared to 18 ms for the ungated case. For a plan delivered at 600 MU/min this would correspond to an average segment dose error of {approx}0.27 MU and {approx}0.18 MU for gated and ungated deliveries, respectively. The maximum dosimetric errors for individual intermediate segments are found to deviate by up to {approx}0.64 MU from their planned value when delivered at 600 MU/min using gating, this compares to only {approx}0.32 MU for the ungated case.

Wiersma, R. D.; Xing, L. [Department of Radiation Oncology, Stanford University School of Medicine, Stanford, California 94305-5847 (United States)

2007-10-15T23:59:59.000Z

150

Stripline microchannel plate image intensifier tubes (MCPTS) for nanosecond optical gating applications  

SciTech Connect (OSTI)

Shuttering characteristics of low impedance stripline geometry microchannel plate image intensifier tubes (MCPTs) with 50% transmissive nickel undercoated S-20 photocathodes are discussed. Iris-free shutter sequences with 50 to 75 micron resolution at optical gate times of 500ps to 2ns were measured for typical samples from two manufacturers. Shutter sequences clearly showing gate pulse propagation velocities for this MCPT design when externally driven by impedance matched circuitry are contrasted with non-directional sequences obtained from unmatched coupling of the gate pulse. 7 refs., 7 figs.

Yates, G.J.; Jaramillo, S.A.; Zagarino, P.; Thomas, M.

1986-01-01T23:59:59.000Z

151

Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene  

E-Print Network [OSTI]

Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

Lin-Jun Wang; Guo-Ping Guo; Da Wei; Gang Cao; Tao Tu; Ming Xiao; Guang-Can Guo; A. M. Chang

2011-04-22T23:59:59.000Z

152

Integrating respiratory gating into a megavoltage cone-beam CT system  

SciTech Connect (OSTI)

We have previously described a low-dose megavoltage cone beam computed tomography (MV CBCT) system capable of producing projection image using one beam pulse. In this study, we report on its integration with respiratory gating for gated radiotherapy. The respiratory gating system tracks a reflective marker on the patient's abdomen midway between the xiphoid and umbilicus, and disables radiation delivery when the marker position is outside predefined thresholds. We investigate two strategies for acquiring gated scans. In the continuous rotation-gated acquisition, the linear accelerator (LINAC) is set to the fixed x-ray mode and the gantry makes a 5 min, 360 deg.continuous rotation, during which the gating system turns the radiation beam on and off, resulting in projection images with an uneven distribution of projection angles (e.g., in 70 arcs each covering 2 deg.). In the gated rotation-continuous acquisition, the LINAC is set to the dynamic arc mode, which suspends the gantry rotation when the gating system inhibits the beam, leading to a slightly longer (6-7 min) scan time, but yielding projection images with more evenly distributed projection angles (e.g., {approx}0.8 deg.between two consecutive projection angles). We have tested both data acquisition schemes on stationary (a contrast detail and a thoracic) phantoms and protocol lung patients. For stationary phantoms, a separate motion phantom not visible in the images is used to trigger the RPM system. Frame rate is adjusted so that approximately 450 images (13 MU) are acquired for each scan and three-dimensional tomographic images reconstructed using a Feldkamp filtered backprojection algorithm. The gated rotation-continuous acquisition yield reconstructions free of breathing artifacts. The tumor in parenchymal lung and normal tissues are easily discernible and the boundary between the diaphragm and the lung sharply defined. Contrast-to-noise ratio (CNR) is not degraded relative to nongated scans of stationary phantoms. The continuous rotation-gated acquisition scan also yields tomographic images with discernible anatomic features; however, streak artifacts are observed and CNR is reduced by approximately a factor of 4. In conclusion, we have successfully developed a gated MV CBCT system to verify the patient positioning for gated radiotherapy.

Chang Jenghwa; Sillanpaa, Jussi; Ling, Clifton C.; Seppi, Edward; Yorke, Ellen; Mageras, Gikas; Amols, Howard [Department of Medical Physics, Memorial Sloan-Kettering Cancer Center, New York, New York 10021 (United States); Ginzton Technology Center, Varian Medical Systems, Mountain View, California 94043 (United States); Department of Medical Physics, Memorial Sloan-Kettering Cancer Center, New York, New York 10021 (United States)

2006-07-15T23:59:59.000Z

153

Demonstration of a fully tuneable entangling gate for continuous-variable one-way quantum computation  

E-Print Network [OSTI]

We introduce a fully tuneable entangling gate for continuous-variable one-way quantum computation. We present a proof-of-principle demonstration by propagating two independent optical inputs through a three-mode linear cluster state and applying the gate in various regimes. The genuine quantum nature of the gate is confirmed by verifying the entanglement strength in the output state. Our protocol can be readily incorporated into efficient multi-mode interaction operations in the context of large-scale one-way quantum computation, as our tuning process is the generalisation of cluster state shaping.

Shota Yokoyama; Ryuji Ukai; Seiji C. Armstrong; Jun-ichi Yoshikawa; Peter van Loock; Akira Furusawa

2014-10-02T23:59:59.000Z

154

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures  

Science Journals Connector (OSTI)

Strong plasmon resonances have been observed in the terahertz transmission spectra (15 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor(HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications.

A. V. Muravjov; D. B. Veksler; V. V. Popov; O. V. Polischuk; N. Pala; X. Hu; R. Gaska; H. Saxena; R. E. Peale; M. S. Shur

2010-01-01T23:59:59.000Z

155

VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy |  

Broader source: Energy.gov (indexed) [DOE]

VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy March 5, 2012 - 1:24pm Addthis Secretary Chu sits down with Microsoft Founder and Chairman Bill Gates at the 2012 ARPA-E Energy Innovation Summit. April Saylor April Saylor Former Digital Outreach Strategist, Office of Public Affairs Last week, attendees at the 2012 ARPA-E Energy Innovation Summit heard from a variety of leaders from across the research, business and government sectors who spoke at the conference of nearly 2,400. These speakers, along with the startup companies and innovators in attendance, converged outside of Washington, D.C., to offer their take on how America can tackle our energy challenges. One of the top-level highlights from the Summit included this fireside chat

156

Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage  

SciTech Connect (OSTI)

A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M.; Zhou, Hong-Cai (TAM); (U. Amsterdam)

2010-10-22T23:59:59.000Z

157

Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage  

SciTech Connect (OSTI)

A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M; Zhou, Hong-Cai

2010-01-01T23:59:59.000Z

158

Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility  

Broader source: Energy.gov [DOE]

Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

159

Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems  

Broader source: Energy.gov [DOE]

Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

160

A linear programming solution to the gate assignment problem at airport terminals  

E-Print Network [OSTI]

This research solves the flight-to-gate assignment problem at airports in such a way as to minimize, or at least reduce, walking distances for passengers inside terminals. Two solution methods are suggested. The first is ...

Mangoubi, Rami

1980-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

E-Print Network 3.0 - arbitrary phase gates Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

<< < 1 2 3 4 5 > >> Page: << < 1 2 3 4 5 > >> 41 Optical simulation of quantum logic N. J. Cerf,1 Summary: of universal quantum gates using simple optical components beam...

162

Simple template-based method to produce bradbury-nielsen gates  

Science Journals Connector (OSTI)

A Bradbury-Nielsen gate (BNG) consists of two interleaved...m with minimal use of a microscope. The small wire spacing allows modulation rates at tens of megahertz. Using this method, we have fabricated four BNG...

Oh Kyu Yoon; Ignacio A. Zuleta

2007-11-01T23:59:59.000Z

163

Process fidelity estimation of linear optical quantum CZ gate: A comparative study  

E-Print Network [OSTI]

We present a systematic comparison of different methods of fidelity estimation of a linear optical quantum controlled-Z gate implemented by two-photon interference on a partially polarizing beam splitter. We have utilized a linear fidelity estimator based on the Monte Carlo sampling technique as well as a non-linear estimator based on maximum likelihood reconstruction of a full quantum process matrix. In addition, we have also evaluated lower bound on quantum gate fidelity determined by average quantum state fidelities for two mutually unbiased bases. In order to probe various regimes of operation of the gate we have introduced a tunable delay line between the two photons. This allowed us to move from high-fidelity operation to a regime where the photons become distinguishable and the success probability of the scheme significantly depends on input state. We discuss in detail possible systematic effects that could influence the gate fidelity estimation.

M. Micuda; M. Sedlak; I. Straka; M. Mikova; M. Dusek; M. Jezek; J. Fiurasek

2014-03-19T23:59:59.000Z

164

Ligand-Gated Chloride Channels Are Receptors for Biogenic Amines in C. elegans  

E-Print Network [OSTI]

Biogenic amines such as serotonin and dopamine are intercellular signaling molecules that function widely as neurotransmitters and neuromodulators. We have identified in the nematode Caenorhabditis elegans three ligand-gated ...

Ringstad, Niels

165

Synthesis of reversible functions using various gate libraries and design specifications  

Science Journals Connector (OSTI)

This dissertation is devoted to efficient automated logic synthesis of reversible circuits using various gate types and initial specifications. These Reversible circuits are of interest to several modern technologies, including Nanotechnology, ...

Nouraddin Alhagi / Marek Perkowski

2010-01-01T23:59:59.000Z

166

Gate-diffusion input (GDI): a power-efficient method for digital combinatorial circuits  

Science Journals Connector (OSTI)

Gate diffusion input (GDI) - a new technique of low-power digital combinatorial circuit design - is described. This technique allows reducing power consumption, propagation delay, and area of digital circuits while maintaining low complexity of logic ...

A. Morgenshtein; A. Fish; I. A. Wagner

2002-10-01T23:59:59.000Z

167

Positions in the glun2c-containing nmdar regulate alcohol sensitivity and ion channel gating.  

E-Print Network [OSTI]

?? The N-methyl-D-aspartate (NMDA) receptor, a subtype of glutamate-gated ion channel, has been shown to be a major target of ethanol in the central nervous (more)

Wu, Man

2014-01-01T23:59:59.000Z

168

A high-k ferroelectric relaxor terpolymer as a gate dielectric for orgnaic thin film transistors  

SciTech Connect (OSTI)

Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE- CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/ off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained

Wu, Shan [Pennsylvania State University; Shao, Ming [ORNL; Burlingame, Quinn [Pennsylvania State University; Chen, Xiangzhong [Penn state university; Lin, Minren [Pennsylvania State University; Xiao, Kai [ORNL; Zhang, Qiming [Pennsylvania State University

2013-01-01T23:59:59.000Z

169

AN AUTOZEROING FLOATING-GATE BANDPASS FILTER Paul Hasler, Bradley A. Minch, and Chris Diorio  

E-Print Network [OSTI]

is the thermal Figure 1: An autozeroing oating-gate ampli er AFGA that uses pFET hot-electron injection a bandpass oating-gate ampli er that uses tunneling and pFET hot-electron injection to set its DC operating the current through the pFET. Steady state occurs when the injection current is equal to the tunneling current

Diorio, Chris

170

Yield estimates and comparisons for full custom, standard cell, and gate array design methodologies  

E-Print Network [OSTI]

YIELD ESTIMATES AND COMPARISONS FOR FULL CUSTOM, STANDARD CELL, AND GATE ARRAY DESIGN METHODOLOGIES A Thesis by MARCELLA EVELYN NORTE Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE December 1990 Major Subject: Electrical Engineering YIELD ESTIMATES AND COMPARISONS FOR FULL CUSTOM, STANDARD CELL, AND GATE ARRAY DESIGN METHODOLOGIES A Thesis by MARCELLA EVELYN NORTE Approved...

Norte, Marcella Evelyn

2012-06-07T23:59:59.000Z

171

Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum computing  

E-Print Network [OSTI]

A quantum computer can solve hard problems - such as prime factoring, database searching, and quantum simulation - at the cost of needing to protect fragile quantum states from error. Quantum error correction provides this protection, by distributing a logical state among many physical qubits via quantum entanglement. Superconductivity is an appealing platform, as it allows for constructing large quantum circuits, and is compatible with microfabrication. For superconducting qubits the surface code is a natural choice for error correction, as it uses only nearest-neighbour coupling and rapidly-cycled entangling gates. The gate fidelity requirements are modest: The per-step fidelity threshold is only about 99%. Here, we demonstrate a universal set of logic gates in a superconducting multi-qubit processor, achieving an average single-qubit gate fidelity of 99.92% and a two-qubit gate fidelity up to 99.4%. This places Josephson quantum computing at the fault-tolerant threshold for surface code error correction. Our quantum processor is a first step towards the surface code, using five qubits arranged in a linear array with nearest-neighbour coupling. As a further demonstration, we construct a five-qubit Greenberger-Horne-Zeilinger (GHZ) state using the complete circuit and full set of gates. The results demonstrate that Josephson quantum computing is a high-fidelity technology, with a clear path to scaling up to large-scale, fault-tolerant quantum circuits.

R. Barends; J. Kelly; A. Megrant; A. Veitia; D. Sank; E. Jeffrey; T. C. White; J. Mutus; A. G. Fowler; B. Campbell; Y. Chen; Z. Chen; B. Chiaro; A. Dunsworth; C. Neill; P. O`Malley; P. Roushan; A. Vainsencher; J. Wenner; A. N. Korotkov; A. N. Cleland; John M. Martinis

2014-02-19T23:59:59.000Z

172

Correlation of gross tumor volume excursion with potential benefits of respiratory gating  

SciTech Connect (OSTI)

Purpose: To test the hypothesis that the magnitude of thoracic tumor motion can be used to determine the desirability of respiratory gating. Methods and materials: Twenty patients to be treated for lung tumors had computed tomography image data sets acquired under assisted breath hold at normal inspiration (100% tidal volume), at full expiration (0% tidal volume), and under free breathing. A radiation oncologist outlined gross tumor volumes (GTVs) on the breath-hold computed tomographic images. These data sets were registered to the free-breathing image data set. Two sets of treatment plans were generated: one based on an internal target volume explicitly formed from assessment of the excursion of the clinical target volume (CTV) through the respiratory cycle, representing an ungated treatment, and the other based on the 0% tidal volume CTV, representing a gated treatment with little margin for residual motion. Dose-volume statistics were correlated to the magnitude of the motion of the center of the GTV during respiration. Results: Patients whose GTVs were >100 cm{sup 3} showed little decrease in lung dose under gating. The other patients showed a correlation between the excursion of the center of the GTV and a reduction in potential lung toxicity. As residual motion increased, the benefits of respiratory gating increased. Conclusion: Gating seems to be advantageous for patients whose GTVs are <100 cm{sup 3} and for whom the center of the GTV exhibits significant motion, provided residual motion under gating is kept small.

Starkschall, George [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)]. E-mail: gstarksc@mdanderson.org; Forster, Kenneth M. [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Kitamura, Kei [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Department of Radiology, Hokkaido University, Graduate School of Medicine, Sapporo (Japan); Cardenas, Alex [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Tucker, Susan L. [Department of Biomathematics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Stevens, Craig W. [Department of Radiation Oncology, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)

2004-11-15T23:59:59.000Z

173

Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry  

E-Print Network [OSTI]

Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

Colin J. Trout; Kenneth R. Brown

2015-01-07T23:59:59.000Z

174

Acoustic sounding of the tropical marine boundary layer during GATE  

Science Journals Connector (OSTI)

A vertically pointed monostatic acoustic sounder was installed on the NOAA ShipOCEANOGRAPHER during the Global Atmospheric Research Program Atlantic Tropical Experiment (GATE). The sounderantenna was mounted on a gyrocontrolled platform to compensate for the ship'spitch and roll motions. Extensive measures such as mounting the antenna assembly on a vibration isolator and installing absorbing cuffs had to be taken to reduce interference by ship?generated noise. Back?scattered acoustic data obtained from up to 850 m height describe the tropical marine boundary layer in unique and hitherto unseen detail. During undisturbed weather conditions the facsimile record showed convective plumes rising from the surface of the water up to 400 m. Storm?generated disturbances resulted in a substantial modification of the boundary layer; low?level multilayered undulating inversions formed from cool outflow currents. The inversions persisted for up to 16 hours. Low?level patchy cumulus clouds produced characteristic hummock?shaped acoustic echoes. Analysis of the Doppler frequency shift of the returns allowed the determination of vertical velocities within these clouds and underlying convective plumes.

P. A. Mandics; J. E. Gaynor; F. F. Hall Jr.

1976-01-01T23:59:59.000Z

175

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain  

SciTech Connect (OSTI)

Interface properties of La-silicate gate dielectrics on Si substrates with W or nano-sized grain W{sub 2}C gate electrodes have been investigated. A low interface state density of 2.5??10{sup 11}?cm{sup ?2}/eV has been achieved with W{sub 2}C gate electrodes, which is one third of those with W gate electrode. An interface roughness of 0.33?nm with spatial frequency comparable to the grain size of W gate electrode has been observed. Besides, an atomically flat interface of 0.12?nm has been obtained with W{sub 2}C gate electrode. The origin of flat interface may be attributed to the elimination of inhomogeneous stress by grains in metal electrode.

Tuokedaerhan, K.; Natori, K.; Iwai, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kakushima, K., E-mail: kakushima@ep.titech.ac.jp; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K. [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

2014-01-13T23:59:59.000Z

176

Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET  

E-Print Network [OSTI]

on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET Characteristics.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET

Anlage, Steven

177

Full-Swing Gate Diffusion Input logic-Case-study of low-power CLA adder design  

Science Journals Connector (OSTI)

Full Swing Gate Diffusion Input (FS-GDI) methodology is presented. The proposed methodology is applied to a 40nm Carry Look Ahead Adder (CLA). The CLA is implemented mainly using GDI full-swing F1 and F2 gates, which are the counterparts of standard ... Keywords: Alternative logic family, Carry Look Ahead (CLA) adder, Full-Swing GDI, Gate Difusion Input (GDI), Low power

Arkadiy Morgenshtein; Viacheslav Yuzhaninov; Alexey Kovshilovsky; Alexander Fish

2014-01-01T23:59:59.000Z

178

Dissociation of human thalamic and cortical SEP gating as revealed by intrathalamic recordings under muscle relaxation  

Science Journals Connector (OSTI)

Gating refers to a reduction of cortical somatosensory evoked potentials (SEP) under multiple simultaneous afferent inputs. This study used the opportunity for intrathalamic recordings in patients with movement disorders to clarify to what extent cortical SEP gating is preceded by thalamic gating. Recordings were performed in 10 patients, narcotised by intravenous propofol when receiving implantation of a therapeutic deep brain stimulator system. SEP were elicited by an 8.1-Hz median nerve stimulation at twice motor threshold and were recorded simultaneously from both intrathalamic and scalp electrodes before and after the application of the depolarising muscle blocker succinylcholine which eliminated both the background muscular tone and the repetitive muscle twitches caused by the median nerve stimulation. Peripheral compound action potentials recorded at the upper arm remained unchanged after complete muscle relaxation, proving a continuously effective nerve stimulation. In contrast, the primary cortical SEP component (N20) was significantly increased under succinylcholine (+17%). This cortical release from gating was not paralleled, however, by an increased thalamic response; rather, the primary thalamic response (P16) showed a slight (?9%) but highly significant amplitude reduction. As the recordings were performed in narcotised patients, any potentially variable attentional bias on part of the subjects can be excluded as confounding factor when comparing the two experimental conditions with vs. without reafferent somatosensory inflow. Thus, given the high signal-to-noise ratio of intrathalamically recorded SEP, the present study shows a distinct thalamocortical dissociation with the primary somatosensory cortex representing the predominant level exhibiting SEP gating.

Fabian Klostermann; Ren Gobbele; Helmut Buchner; Gabriel Curio

2002-01-01T23:59:59.000Z

179

Water gate array for current flow or tidal movement pneumatic harnessing system  

DOE Patents [OSTI]

The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

Gorlov, Alexander M. (Brookline, MA)

1991-01-01T23:59:59.000Z

180

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and  

Broader source: Energy.gov (indexed) [DOE]

Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders February 28, 2012 - 7:02am Addthis Washington D.C. - This week, the Advanced Research Projects Agency - Energy (ARPA-E) is hosting its third annual Energy Innovation Summit, which is designed to unite key players from all sectors of America's energy innovation community to share ideas for how to lead the world in the development of next generation clean energy technologies, develop our nation's energy resources, and build an American economy that lasts. Tomorrow's full agenda with speakers is below. For specific press requests, please contact Keri Fulton at keri.fulton@hq.doe.gov.

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and  

Broader source: Energy.gov (indexed) [DOE]

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders February 28, 2012 - 7:02am Addthis Washington D.C. - This week, the Advanced Research Projects Agency - Energy (ARPA-E) is hosting its third annual Energy Innovation Summit, which is designed to unite key players from all sectors of America's energy innovation community to share ideas for how to lead the world in the development of next generation clean energy technologies, develop our nation's energy resources, and build an American economy that lasts. Tomorrow's full agenda with speakers is below. For specific press requests, please contact Keri Fulton at keri.fulton@hq.doe.gov.

182

ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred  

Broader source: Energy.gov (indexed) [DOE]

Announces 2012 Energy Innovation Summit Featuring Bill Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott September 9, 2011 - 9:25am Addthis New York, NY - The U.S. Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) Director, Arun Majumdar, announced yesterday that the Agency will hold its third annual ARPA-E Energy Innovation Summit from February 27 - 29, 2012 at the Gaylord Convention Center just outside Washington, D.C. Bill Gates, founder and chairman of Microsoft; Fred Smith, chairman, president and CEO of FedEx; and Lee Scott, former CEO of Wal-Mart; will join Secretary Chu and Director Majumdar as distinguished keynote speakers. "After two successful Summits, I'm excited to once again bring some of

183

Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment  

SciTech Connect (OSTI)

Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al{sub 2}O{sub 3}) on a graphene channel through nitrogen plasma treatment. The deposited Al{sub 2}O{sub 3} thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al{sub 2}O{sub 3} as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics.

Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun [Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)

2013-07-01T23:59:59.000Z

184

Photon-energy-dependent light effects in organic nano-floating-gate nonvolatile memories  

Science Journals Connector (OSTI)

Abstract A pentacene-based organic field-effect transistor nonvolatile memory, in which polystyrene covered Au nanoparticles act as the nano-floating-gate, is probed under different illumination conditions. The memory window can be greatly enlarged upon illumination depending on incident photon energy and intensity, and two light effects are proposed and discussed. The minority multiplication effect enhances the minority carrier tunneling into the nano-floating-gate, resulting in the remarkable positive VT shift. The excitation-induced injection effect is strongly photon energy dependent, and it is responsible for the significant negative VT shift. Appropriate illumination is favorable for reducing the programming/erasing voltage of organic nano-floating-gate nonvolatile memories.

Xu Gao; Chang-Hai Liu; Xiao-Jian She; Qin-Liang Li; Jie Liu; Sui-Dong Wang

2014-01-01T23:59:59.000Z

185

Engineering a C-Phase quantum gate: optical design and experimental realization  

E-Print Network [OSTI]

A two qubit quantum gate, namely the C-Phase, has been realized by exploiting the longitudinal momentum (i.e. the optical path) degree of freedom of a single photon. The experimental setup used to engineer this quantum gate represents an advanced version of the high stability closed-loop interferometric setup adopted to generate and characterize 2-photon 4-qubit Phased Dicke states. Some experimental results, dealing with the characterization of multipartite entanglement of the Phased Dicke states are also discussed in detail.

Andrea Chiuri; Chiara Greganti; Paolo Mataloni

2012-04-12T23:59:59.000Z

186

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays  

SciTech Connect (OSTI)

Low-frequency noise is used to study the electronic transport in arrays of 14?nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

Clment, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincar, 59652 Villeneuve d'Ascq (France)] [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincar, 59652 Villeneuve d'Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

2013-12-23T23:59:59.000Z

187

Resilience of gated avalanche photodiodes against bright illumination attacks in quantum cryptography  

E-Print Network [OSTI]

Semiconductor avalanche photodiodes (APDs) are commonly used for single photon detection in quantum key distribution. Recently, many attacks using bright illumination have been proposed to manipulate gated InGaAs APDs. In order to devise effective counter-measures, careful analysis of these attacks must be carried out to distinguish between incorrect operation and genuine loopholes. Here, we show that correctly-operated, gated APDs are immune to continuous-wave illumination attacks, while monitoring the photocurrent for anomalously high values is a straightforward counter-measure against attacks using temporally tailored light.

Z. L. Yuan; J. F. Dynes; A. J. Shields

2011-06-14T23:59:59.000Z

188

A proposal for the implementation of quantum gates with photonic-crystal coupled cavity waveguides  

E-Print Network [OSTI]

Quantum computers require technologies that offer both sufficient control over coherent quantum phenomena and minimal spurious interactions with the environment. We show, that photons confined to photonic crystals, and in particular to highly efficient waveguides formed from linear chains of defects doped with atoms can generate strong non-linear interactions which allow to implement both single and two qubit quantum gates. The simplicity of the gate switching mechanism, the experimental feasibility of fabricating two dimensional photonic crystal structures and integrability of this device with optoelectronics offers new interesting possibilities for optical quantum information processing networks.

Dimitris G. Angelakis; Marcelo Franca Santos; Vassilis Yannopapas; Artur Ekert

2007-04-12T23:59:59.000Z

189

A procedure for localizing faults to specific gates using power supply transient signals is described. The method  

E-Print Network [OSTI]

of gates along sensitized paths from the composite transient signals measured at the power ports or C4s by a defect-free chip or simulation to identify the position of a defect. The transients produced at the C4sAbstract A procedure for localizing faults to specific gates using power supply transient signals

Plusquellic, James

190

Activation of the Inositol (1,4,5)-Triphosphate Calcium Gate Receptor Is Required for HIV-1 Gag Release  

Science Journals Connector (OSTI)

...27 Jagannath, A., and M. J. A. Wood. 2009. Localization of double-stranded...inositol (1,4,5)-triphosphate calcium gate receptor is required for HIV-1 Gag release...5)-triphosphate receptor (IP3R) gates intracellular Ca(2+) stores. Following...

Lorna S. Ehrlich; Gisselle N. Medina; Mahfuz B. Khan; Michael D. Powell; Katsuhiko Mikoshiba; Carol A. Carter

2010-04-28T23:59:59.000Z

191

Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced by Truncated Constructs  

E-Print Network [OSTI]

Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced, United Kingdom Voltage-gated calcium channel 1 subunits consist of four domains (I­IV), each with six by the cytoplasmic I-II loop of Cav2.2. It requires transmembrane seg- ments, because the isolated Cav2.2 N terminus

Dolphin, Annette C.

192

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

193

Crystal Structure of the Mammalian GIRK2 KplusChannel and Gating Regulation by G Proteins PIP2 and Sodium  

SciTech Connect (OSTI)

G protein-gated K{sup +} channels (Kir3.1--Kir3.4) control electrical excitability in many different cells. Among their functions relevant to human physiology and disease, they regulate the heart rate and govern a wide range of neuronal activities. Here, we present the first crystal structures of a G protein-gated K{sup +} channel. By comparing the wild-type structure to that of a constitutively active mutant, we identify a global conformational change through which G proteins could open a G loop gate in the cytoplasmic domain. The structures of both channels in the absence and presence of PIP{sub 2} suggest that G proteins open only the G loop gate in the absence of PIP{sub 2}, but in the presence of PIP{sub 2} the G loop gate and a second inner helix gate become coupled, so that both gates open. We also identify a strategically located Na{sup +} ion-binding site, which would allow intracellular Na{sup +} to modulate GIRK channel activity. These data provide a structural basis for understanding multiligand regulation of GIRK channel gating.

M Whorton; R MacKinnon

2011-12-31T23:59:59.000Z

194

ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3  

E-Print Network [OSTI]

ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3 , Bo Zhang 3 , Vincent of the algorithm used for the minimization. Index Terms -- C-Arm, computed tomography, ECG- gating, augmented arises from the synchronization with the patient's electrocardiogram (ECG), which is necessary to avoid

Paris-Sud XI, Université de

195

Site-Directed Amino Acid Substitutions in the Hydroxylase ? Subunit of Butane Monooxygenase from Pseudomonas butanovora: Implications for Substrates Knocking at the Gate  

Science Journals Connector (OSTI)

...intricacies of the leucine gate influence catalysis at...opening the leucine gate and shifting the geometry...where green is carbon, red is oxygen, blue is nitrogen...is through the leucine gate toward the diiron center...H. Shim, and T. K. Wood. 2002. Directed evolution...

Kimberly H. Halsey; Luis A. Sayavedra-Soto; Peter J. Bottomley; Daniel J. Arp

2006-07-01T23:59:59.000Z

196

Guardians at the Gates of Hell Estimating the Risk of Nuclear Theft and Terrorism  

E-Print Network [OSTI]

that pose the highest-priority risks of nuclear theft, and to evaluate policy approaches to strengtheningGuardians at the Gates of Hell Estimating the Risk of Nuclear Theft and Terrorism ­ and Identifying the Highest-Priority Risks of Nuclear Theft by Matthew Bunn SB and SM, Political Science, MIT, 1985 SUBMITTED

de Weck, Olivier L.

197

7-Gate Kinetic AMPA Model Kinetics to match EPSCs from calyx of Held  

E-Print Network [OSTI]

7-Gate Kinetic AMPA Model · Kinetics to match EPSCs from calyx of Held · Multiple closed, open and EPSC amplitude Bruce Graham Department of Computing Science and Mathematics, University of Stirling, U, including the calyx of Held in the mammalian auditory system. Such depression may be mediated

Graham, Bruce

198

The Thinnest Molecular Separation Sheet by Graphene Gates of Single-Walled Carbon Nanohorns  

Science Journals Connector (OSTI)

Graduate School of Science, Chiba University, 1-33 Yayoi, Inage, Chiba, Chiba 263-8522, Japan ... transport properties; surface science; separation science; molecular modeling; green chemistry; molecular gates; picostructures ... The author would like to thank Dr. M. Yudasaka from the Nanotube Research Center, Advanced Industrial Science and Technology, Japan and Prof. S. Iijima from Meijo University, Japan for supplying the NHs. ...

Tomonori Ohba

2014-10-27T23:59:59.000Z

199

International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control  

E-Print Network [OSTI]

International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control Who we are: The International Center for Tropical Agriculture (CIAT) is a member institute of the Consultative Group on International Agricultural Research (CIAR). Based in Cali, Colombia, we focus

Ferrara, Katherine W.

200

Circadian gating of the psbAIII high light response in Synechococcus sp. strain PCC 7942  

E-Print Network [OSTI]

(1-5 fold) during the peaks of the cycle. We also found that in a clock null strain the lack of an oscillator does not entirely negate the light response of PpsbAIII::luxAB; however, this response does not demonstrate gating. In contrast...

Shelton, Jeffrey Lyn

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Performance of a 512 x 512 Gated CMOS Imager with a 250 ps Exposure Time  

SciTech Connect (OSTI)

We describe the performance of a 512x512 gated CMOS read out integrated circuit (ROIC) with a 250 ps exposure time. A low-skew, H-tree trigger distribution system is used to locally generate individual pixel gates in each 8x8 neighborhood of the ROIC. The temporal width of the gate is voltage controlled and user selectable via a precision potentiometer. The gating implementation was first validated in optical tests of a 64x64 pixel prototype ROIC developed as a proof-of-concept during the early phases of the development program. The layout of the H-Tree addresses each quadrant of the ROIC independently and admits operation of the ROIC in two modes. If common mode triggering is used, the camera provides a single 512x512 image. If independent triggers are used, the camera can provide up to four 256x256 images with a frame separation set by the trigger intervals. The ROIC design includes small (sub-pixel) optical photodiode structures to allow test and characterization of the ROIC using optical sources prior to bump bonding. Reported test results were obtained using short pulse, second harmonic Ti:Sapphire laser systems operating at ?~ 400 nm at sub-ps pulse widths.

Teruya, A T; Moody, J D; Hsing, W W; Brown, C G; Griffin, M; Mead, A S

2012-10-01T23:59:59.000Z

202

Elephant Beer and Shinto Gates: Managing Similar Concepts in a Multilingual Database  

E-Print Network [OSTI]

Elephant Beer and Shinto Gates: Managing Similar Concepts in a Multilingual Database Martin" and "tembo" are completely interchangeable when talking about elephants, but bring you different brands as "rouge" in French or "nyekundu" in Swahili. An "elephant" is an elephant, whether it is "éléphant

203

Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors  

SciTech Connect (OSTI)

A prior requirement of any developed transistor for practical use is the stability test. Random network carbon nanotube-thin film transistor (CNT-TFT) was fabricated on SiO{sub 2}/Si. Gate bias stress stability was investigated with various passivation layers of HfO{sub 2} and Al{sub 2}O{sub 3}. Compared to the threshold voltage shift without passivation layer, the measured values in the presence of passivation layers were reduced independent of gate bias polarity except HfO{sub 2} under positive gate bias stress (PGBS). Al{sub 2}O{sub 3} capping layer was found to be the best passivation layer to prevent ambient gas adsorption, while gas adsorption on HfO{sub 2} layer was unavoidable, inducing surface charges to increase threshold voltage shift in particular for PGBS. This high performance in the gate bias stress test of CNT-TFT even superior to that of amorphous silicon opens potential applications to active TFT industry for soft electronics.

Won Lee, Sang [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Suh, Dongseok, E-mail: energy.suh@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Young Lee, Si [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Hee Lee, Young, E-mail: leeyoung@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-04-21T23:59:59.000Z

204

Unique Functional Properties of a Sensory Neuronal P2X ATP-Gated Channel from Zebrafish  

E-Print Network [OSTI]

of native P2X receptor channels evokes a fast inward current carried by mono- valent and calcium ions in a broad range of calcium- dependent signaling events from the neurogenic control of smooth muscle, and a cysteine-rich extracellular loop resembles that of recently discovered proton-gated channels (Wald- mann

Séguéla, Philippe

205

Ligand Gated Ion Channel Functionality Assays Robert P. Hayes, Kumud Raj Poudel and James A. Brozik  

E-Print Network [OSTI]

was to devise a method suitable to test the functionality of the entire family of cysteine-loop ligand gated ion substrate was infused with calcium ions that were trapped by the POPC bilayer. Once the assembly was formed. Electrochemical measurements were taken using a calcium ion sensitive electrode. The assemblies were interrogated

Collins, Gary S.

206

Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights  

E-Print Network [OSTI]

PWP-076 Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow.ucei.berkeley.edu/ucei #12;Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights- mission use. The North American Electric Reliability Council NERC is in the process of implementing

California at Berkeley. University of

207

Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in  

E-Print Network [OSTI]

Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in Cardiac Myocytes H-dependent inactivation can be modulated by changes in cytoplasmic Mg~+. INTRODUCTION Magnesium is an important constituent of the intracellular milieu. Despite the importance of magnesium as an essential cofactor

208

Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors  

E-Print Network [OSTI]

Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors Iddo-walled carbon nanotubes (SWNTs) and graphene can function as highly sensitive nanoscale (bio)sensors in solution. Here, we compare experimentally how SWNT and graphene transistors respond to changes in the composition

Dekker, Cees

209

Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1  

E-Print Network [OSTI]

Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1 J. Yan,1,2 R. J. Suess,3 T. E photoresponse in gapped bilayer graphene was investigated by optical and transport measurements. A pulse There is growing recognition that graphene has excep- tional potential as a new optoelectronic material, which has

Murphy, Thomas E.

210

Current transport, gate dielectrics and band gap engineering in graphene devices  

E-Print Network [OSTI]

Current transport, gate dielectrics and band gap engineering in graphene devices Wenjuan Zhu In this work, we studied current transport in mono-, bi- and tri-layer graphene. We find that both of the electrical field of the substrate surface polar phonons in bi-layer/tri-layer graphenes. We also find

Perebeinos, Vasili

211

Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology  

E-Print Network [OSTI]

of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 ?? tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped Ta...

Lu, Jiang

2007-04-25T23:59:59.000Z

212

Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor  

E-Print Network [OSTI]

monitoring, solid-oxide fuel cells, and coal gasification, require operation at much higher temperatures thanSulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor Yung Ho to hydrogen sulfide, even in the presence of hydrogen or oxygen at partial pressures of 20­600 times greater

Tobin, Roger G.

213

Channel gating forces govern accuracy of mechano-electrical transduction in hair cells  

Science Journals Connector (OSTI)

...imposed on the measurements by the series resistance of the patch. Hair-bundle displacement was measured...The most important parameter is the elementary gating force, Z, defined as...Support, Non-U.S. Gov't | Animals Electric Stimulation Electrophysiology Hair Cells...

Sietse M. van Netten; Theo Dinklo; Walter Marcotti; Corn J. Kros

2003-01-01T23:59:59.000Z

214

The use of gated radionuclide angiography in the diagnosis of cardiac contusion  

SciTech Connect (OSTI)

No currently used diagnostic test is an accurate predictor of patients who will develop morbidity or mortality from cardiac contusion. In a prospective study we used gated cardiac radionuclide angiography to assess cardiac function in 30 patients with blunt chest trauma, and we compared the results of this test with those of other diagnostic studies for cardiac contusion to determine whether gated angiography is a more accurate predictor of serious cardiac injury. Diagnostic tests included the following: serial electrocardiograms (ECG), serial creatine phosphokinase muscle-brain isoenzyme (CPK-MB) and lactic dehydrogenase (LDH) isoenzymes, gated cardiac radionuclide angiography, and technetium-99m (Tc-99m) pyrophosphate scintigraphy. Abnormal studies were present in 26 patients; 22 showed abnormalities in CPK-MB, 19 on ECG, and five on gated scan. No patient demonstrated an abnormal Tc-99m pyrophosphate scan or abnormal elevation of LDH isoenzyme. Although no diagnostic test was predictive of morbidity and mortality, CPK-MB isoenzyme was the only test to correlate with morbidity and mortality. Morbidity and mortality correlated most closely with the number of associated major injuries and the presence of hypotension or hypoxia.

Fenner, J.E.; Knopp, R.; Lee, B.; dos Santos, P.A.; Wessel, R.J.; Dang, C.V.; Parks, S.N.

1984-09-01T23:59:59.000Z

215

What's in Season from the Garden State To receive these reports by e-mail: njfarmfresh@rcre.rutgers.edu  

E-Print Network [OSTI]

brilliant red skin. A fruit native to New Jersey, the cranberry thrives in the acidic peat soil of the Pines reservoirs are made. The waters are recycled through the bogs through a system of canals, sluice gates://www.jerseyfresh.nj.gov/. Lest one think the cranberry industry is as back- woods and slow-paced as a lazy river through

Goodman, Robert M.

216

AU1: Use authority names upon first mention in the abstract and first mention in the text. AU2: The citation "Tribe Cillie 2004" matches the reference "Tribe Cillie 2004", but an accent  

E-Print Network [OSTI]

brilliant red skin. A fruit native to New Jersey, the cranberry thrives in the acidic peat soil of the Pines reservoirs are made. The waters are recycled through the bogs through a system of canals, sluice gates://www.jerseyfresh.nj.gov/. Lest one think the cranberry industry is as back- woods and slow-paced as a lazy river through

Parry, Dylan

217

Robust quantum gates and a bus architecture for quantum computing with rare-earth-ion doped crystals  

E-Print Network [OSTI]

We present a composite pulse controlled phase gate which together with a bus architecture improves the feasibility of a recent quantum computing proposal based on rare-earth-ion doped crystals. Our proposed gate operation is tolerant to variations between ions of coupling strengths, pulse lengths, and frequency shifts, and it achieves worst case fidelities above 0.999 with relative variations in coupling strength as high as 10% and frequency shifts up to several percent of the resonant Rabi frequency of the laser used to implement the gate. We outline an experiment to demonstrate the creation and detection of maximally entangled states in the system.

Janus Wesenberg; Klaus Moelmer

2003-01-09T23:59:59.000Z

218

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission+Bay,+San+Francisco,+CA/@37.7996107,-122.4363906,... 1/2  

E-Print Network [OSTI]

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF has tolls. Directions from Golden Gate Bridge to UCSF/Mission Bay San Francisco, CA 94129 Golden Gate;8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission

Derisi, Joseph

219

Hybrid Photonic Hyper-Controlled-Not Gate with the Dipole Induced Transparency in Weak-Coupling Regime  

E-Print Network [OSTI]

We present a hybrid hyper-controlled-not (hyper-CNOT) gate for hyperparallel photonic quantum computing based on both the polarization and spatial-mode degrees of freedom (DOFs) of a two-photon system, which is identical to two CNOT gates operating at the same time on four photons in one DOF. This proposal is implemented with the optical reflection-transmission property of a diamond nitrogen-vacancy center embedded in a photonic crystal cavity coupled to two waveguides, which is suitable for the robust and flexible quantum information processing based on both the spatial-mode and polarization DOFs of photon systems in Purcell regime. With the hybrid hyper-CNOT gate, more quantum logic gate operations can be accomplished with less resources in a definite period of time, and the influence from photonic dissipation and environment noise can be suppressed.

Bao-Cang Ren; Fu-Guo Deng

2014-11-02T23:59:59.000Z

220

E-Print Network 3.0 - atp-gated p2x4 ion Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ion Search Powered by Explorit Topic List Advanced Search Sample search results for: atp-gated p2x4 ion Page: << < 1 2 3 4 5 > >> 1 introduction browse basic search advanced...

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


221

Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan- Dearborn  

Broader source: Energy.gov [DOE]

Presentation given by Regents University of Michigan at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

222

Abstract----Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is  

E-Print Network [OSTI]

and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2- D numerical. The quantitative analysis were conducted by Silvaco Atlas, a 2-D numerical device simulator [4]. We read

Lee, Jong Duk

223

Positions in the GluN2C-Containing NMDAR Regulate Alcohol Sensitivity and Ion Channel Gating.  

E-Print Network [OSTI]

??The N-methyl-D-aspartate (NMDA) receptor, a subtype of glutamate-gated ion channel, has been shown to be a major target of ethanol in the central nervous system (more)

Wu, Man

2014-01-01T23:59:59.000Z

224

ESS 2012 Peer Review - Notrees Wind Storage - Jeff Gates, Duke Energy  

Broader source: Energy.gov (indexed) [DOE]

Notrees Energy Storage Project Notrees Energy Storage Project Jeff Gates Duke Energy jeff.gates@duke-energy.com Project Objectives * Use energy storage to increase the value and practical application of wind generation * Integrate storage with intermittent renewable energy production * Improve use of power-producing assets by storing energy during non-peak generation periods * Demonstrate benefits of using fast response energy storage to provide ancillary services for grid management * Verify that energy storage solutions can operate within the ERCOT market protocols * Demonstrate ramp control and Energy Storage System * Technology: Advanced lead-acid battery * OEM Partner - Xtreme Power (XP) * 36 MW / 24 MWh output * Modules housed in ~ 6,000 sq. ft. building Project Activities to Date * Site construction began December

225

Effects of spectral entanglement in polarization-entanglement swapping and type-I fusion gates  

Science Journals Connector (OSTI)

We examine how spectral entanglement in polarization-entangled photon states generated from bulk-crystal, spontaneous parametric down-conversion affects the success of entanglement swapping and type-I fusion gates. We quantify the success of the entanglement swapping and fusion gates by calculating the bipartite concurrence and residual tangle, respectively, in terms of the joint spectral probability amplitudes of the initial broad-bandwidth polarization-entangled states. We find that both polarization-entanglement measures depend strongly on the initial spectral entanglement, as well as on the configuration of the independent sources. Specifically, when spectral differences correlate with polarization, the optimal source configuration is different for the two protocols. We conclude that this distinction is founded in how the underlying Bell-state measurement and quantum-erasure techniques respond differently to distinguishing spectral information.

Travis S. Humble and Warren P. Grice

2008-02-11T23:59:59.000Z

226

Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes  

E-Print Network [OSTI]

We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

Jun Zhang; Rob Thew; Claudio Barreiro; Hugo Zbinden

2009-08-16T23:59:59.000Z

227

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability  

SciTech Connect (OSTI)

We fabricated nano-crystalline Si (nc-Si:H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (?{sub FE}) and adjustable threshold voltages (V{sub th}). The nc-Si:H channel and source/drain (S/D) of the multilayered TFT were deposited at 375?C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high ?{sub FE} of 370 cm{sup 2}/V-s, a steep subthreshold slope of 90?mV/decade, and a low V{sub th} of ?0.64?V. When biased with the double-gate driving mode, the device shows a tunable V{sub th} value extending from ?1?V up to 2.7?V.

Chiou, Uio-Pu; Pan, Fu-Ming, E-mail: fmpan@faculty.nctu.edu.tw [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); Shieh, Jia-Min, E-mail: jmshieh@narlabs.org.tw, E-mail: jmshieh@faculty.nctu.edu.tw [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China) [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China); Yang, Chih-Chao [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China)] [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Huang, Wen-Hsien [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China) [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Kao, Yo-Tsung [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)] [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)

2013-11-11T23:59:59.000Z

228

2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates  

ScienceCinema (OSTI)

The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

Chu, Steven (U.S. Department of Energy Secretary); Gates, Bill (Microsoft, Chairman); Podesta, John (Center for American Progress, Chair and Counselor)

2012-03-21T23:59:59.000Z

229

Gated x-ray framing camera image of a direct-drive cylindrical implosion  

SciTech Connect (OSTI)

Gated X-ray images of laser-driven implosions can provide movies of typically 16 frames with {approximately} 80 ps time resolution and 10 {micro}m spatial resolution. Cylindrical implosions allow study of convergent hydrodynamics but with excellent diagnostic access down the axis of the cylinder. This example from a recent cylindrical implosion campaign on the OMEGA laser provides quantitative data on the growth of ablative Rayleigh-Taylor instabilities in convergent geometry.

Voss, S.A.; Barnes, C.W.; Oertel, J.A.; Watt, R.G. [Los Alamos National Lab., NM (United States)] [Los Alamos National Lab., NM (United States); Boehly, T.R.; Bradley, D.K.; Knauer, J.P.; Pien, G. [Univ. of Rochester, NY (United States). Lab. for Laser Energetics] [Univ. of Rochester, NY (United States). Lab. for Laser Energetics

1999-02-01T23:59:59.000Z

230

Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode  

SciTech Connect (OSTI)

We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520?nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women's Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

2014-01-27T23:59:59.000Z

231

Modeling the current behavior of the digital BiCMOS gate  

E-Print Network [OSTI]

CMOS gate showing the pull-up and pull-down sections 6 Schematics of the pull-up section Pull-up equivalent circuit model . Equivalent circuit model 10 Simplified equivalent circuit model Equivalent circuit model neglecting ATF Collector current... with ATF effect vs without ATF effect 14 Modified circuit model 16 10 Comparison of this work versus SPICE simulation Typical collector current response 17 12 13 Equivalent circuit for 0 ? t0 Equivalent circuit after t0 21 14 Base current...

Tang, Zhilong

1995-01-01T23:59:59.000Z

232

Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor  

E-Print Network [OSTI]

new circuit topology for IGFET, which on average shows 33.8% lower leakage and 34.9% lower area at the cost of 2.8% increase in total active mode power, for basic logic gates. Finally, we showed a technique for reducing leakage of minimum sized... ????????????????????????????????????????????????? 5 III.1 Power-delay product for FO4 inverter ????????????????????????????????????? 12 III.2 Power-delay product for 51 Stage ring oscillator ??????????????????????????? 12 IV.1 Delay distribution histogram...

Singh, Amrinder

2011-10-21T23:59:59.000Z

233

ESS 2012 Peer Review - Engineered Gate Oxides for Wide Bandgap Semiconductor MOSFETs - Jon Ihlefeld, SNL  

Broader source: Energy.gov (indexed) [DOE]

-5 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -6 -4 -2 0 2 4 6 8 10 |J Leakage | (A-cm -2 ) Semiconductor Voltage (V) Engineered Gate Oxides for Wide Bandgap S emiconductor M OSFETs* Jon I hlefeld, M ichael B rumbach, S andeepan D asGupta, and Stanley AtciEy Sandia NaGonal Laboratories *Sponsored b y t he U .S. D epartment o f E nergy's O ffice o f E lectricity E nergy S torage Systems P rogram jihlefe@sandia.gov, 505---844---3162; s atciE@sandia.gov, 505---284---2701 Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND No. 2011-XXXXP Cooling Power electronics Energy storage Energy storage -V gate Low defect oxide Metal gate Wide

234

Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data  

E-Print Network [OSTI]

Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm...

Chen, Ze; Chen, Jin-Da; Zhang, Xiu-Ling; Sun, Zhi-Yu; Huang, Wen-Xue; Wang, Jian-Song; Guo, Zhong-Yan; Xiao, Guo-Qing

2013-01-01T23:59:59.000Z

235

Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data  

E-Print Network [OSTI]

Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm. The module can also be applied to other cases for precisely simulating optical photons propagating in scintillators.

Ze Chen; Zheng-Guo Hu; Jin-Da Chen; Xiu-Ling Zhang; Zhi-Yu Sun; Wen-Xue Huang; Jian-Song Wang; Zhong-Yan Guo; Guo-Qing Xiao

2013-09-15T23:59:59.000Z

236

A large Bradbury Nielsen ion gate with flexible wire spacing based on photo-etched stainless steel grids  

E-Print Network [OSTI]

Bradbury Nielsen gates are well known devices used to switch ion beams and are typically applied in mass or mobility spectrometers for separating beam constituents by their different flight or drift times. A Bradbury Nielsen gate consists of two interleaved sets of electrodes. If opposite polarity of the same amplitude is applied the gate is closed, and for identical (zero) potential the gate is open. Whereas former realizations of the device employ actual wires resulting in difficulties with winding, fixing and tensioning them, our approach is to use two grids photo-etched onto a metallic foil. This design allows for simplified construction of gates covering large beam sizes up to at least 900\\,mm$^2$ with variable wire spacing down to 250\\,\\textmu m. By changing the grids the wire spacing can be varied without major changes. A gate of this design was installed and systematically tested at TRIUMF's ion trap facility, TITAN, for use with radioactive beams to separate isobaric contamination of charge states.

Brunner, T; O'Sullivan, K; Simon, M C; Kossick, M; Ettenauer, S; Gallant, A T; Man, E; Bishop, D; Good, M; Gratta, G; Dilling, J

2011-01-01T23:59:59.000Z

237

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors  

SciTech Connect (OSTI)

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (?130?C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for free without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k?=?3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

2014-02-24T23:59:59.000Z

238

Design and optimisation of quantum logic circuits for a three-qubit Deutsch-Jozsa algorithm implemented with optically-controlled, solid-state quantum logic gates  

E-Print Network [OSTI]

We analyse the design and optimisation of quantum logic circuits suitable for the experimental demonstration of a three-qubit quantum computation prototype based on optically-controlled, solid-state quantum logic gates. In these gates, the interaction between two qubits carried by the electron-spin of donors is mediated by the optical excitation of a control particle placed in their proximity. First, we use a geometrical approach for analysing the entangling characteristics of these quantum gates. Then, using a genetic programming algorithm, we develop circuits for the refined Deutsch-Jozsa algorithm investigating different strategies for obtaining short total computational times. We test two separate approaches based on using different sets of entangling gates with the shortest possible gate computation time which, however, does not introduce leakage of quantum information to the control particles. The first set exploits fast approximations of controlled-phase gates as entangling gates, while the other one arbitrary entangling gates with a shorter gate computation time compared to the first set. We have identified circuits with consistently shorter total computation times when using controlled-phase gates.

A. Del Duce; S. Savory; P. Bayvel

2009-10-09T23:59:59.000Z

239

Respiration Induced Heart Motion and Indications of Gated Delivery for Left-Sided Breast Irradiation  

SciTech Connect (OSTI)

Purpose: To investigate respiration-induced heart motion for left-sided breast irradiation using a four-dimensional computed tomography (4DCT) technique and to determine novel indications to assess heart motion and identify breast patients who may benefit from a gated treatment. Methods and Materials: Images of 4DCT acquired during free breathing for 20 left-sided breast cancer patients, who underwent whole breast irradiation with or without regional nodal irradiation, were analyzed retrospectively. Dose distributions were reconstructed in the phases of 0%, 20%, and 50%. The intrafractional heart displacement was measured in three selected transverse CT slices using D{sub LAD} (the distance from left ascending aorta to a fixed line [connecting middle point of sternum and the body] drawn on each slice) and maximum heart depth (MHD, the distance of the forefront of the heart to the line). Linear regression analysis was used to correlate these indices with mean heart dose and heart dose volume at different breathing phases. Results: Respiration-induced heart displacement resulted in observable variations in dose delivered to the heart. During a normal free-breathing cycle, heart-induced motion D{sub LAD} and MHD changed up to 9 and 11 mm respectively, resulting in up to 38% and 39% increases of mean doses and V{sub 25.2} for the heart. MHD and D{sub LAD} were positively correlated with mean heart dose and heart dose volume. Respiratory-adapted gated treatment may better spare heart and ipsilateral-lung compared with the conventional non-gated plan in a subset of patients with large D{sub LAD} or MHD variations. Conclusion: Proposed indices offer novel assessment of heart displacement based on 4DCT images. MHD and D{sub LAD} can be used independently or jointly as selection criteria for respiratory gating procedure before treatment planning. Patients with great intrafractional MHD variations or tumor(s) close to the diaphragm may particularly benefit from the gated treatment.

Qi, X. Sharon, E-mail: xiangrong.qi@ucdenver.edu [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Hu, Angela [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Wang Kai [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States); Newman, Francis [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Crosby, Marcus; Hu Bin; White, Julia; Li, X. Allen [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States)

2012-04-01T23:59:59.000Z

240

Project management plan for Project W-320, Tank 241-C-106 sluicing  

SciTech Connect (OSTI)

This Project Management Plan establishes the organization, plans, and systems for management of Project W-320 as defined in DOE Order 4700.1, Project Management System (DOE 1987).

Phillips, D.R.

1994-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Project W-320, 241-C-106 sluicing: Civil/structural calculations. Volume 3  

SciTech Connect (OSTI)

This supporting document has been prepared to make the FDNW civil/structural calculations for Project W-320 readily retrievable. The Equipment Removal System (ERS) has been identified by WHC as not having any safety class 1 items present in the tank pits during equipment removal activities, Documentation of this finding is provided in Letter of Instruction 3/1 Analysis Requirements for Project W-320 Equipment Removal System (REF: LOI KGS-94-013). Based on this specific direction from WHC, 3/1 analysis for any component of the Project W-320 ERS is required. No further documentation of non-safety impacting safety items is required per DOE-RL Audit finding No.90-02, and filing of this memorandum in the W-320 project files satisfies the intent of the referenced DOE observation.

Bailey, J.W.

1998-07-24T23:59:59.000Z

242

Project W-320, 241-C-106 sluicing: Piping calculations. Volume 4  

SciTech Connect (OSTI)

This supporting document has been prepared to make the FDNW calculations for Project W-320 readily retrievable. The objective of this calculation is to perform the structural analysis of the Pipe Supports designed for Slurry and Supernate transfer pipe lines in order to meet the requirements of applicable ASME codes. The pipe support design loads are obtained from the piping stress calculations W320-27-I-4 and W320-27-I-5. These loads are the total summation of the gravity, pressure, thermal and seismic loads. Since standard typical designs are used for each type of pipe support such as Y-Stop, Guide and Anchors, each type of support is evaluated for the maximum loads to which this type of supports are subjected. These loads are obtained from the AutoPipe analysis and used to check the structural adequacy of these supports.

Bailey, J.W.

1998-07-24T23:59:59.000Z

243

Project W-320, 241-C-106 sluicing electrical calculations, Volume 2  

SciTech Connect (OSTI)

This supporting document has been prepared to make the FDNW calculations for Project W-320, readily retrievable. These calculations are required: To determine the power requirements needed to power electrical heat tracing segments contained within three manufactured insulated tubing assemblies; To verify thermal adequacy of tubing assembly selection by others; To size the heat tracing feeder and branch circuit conductors and conduits; To size protective circuit breaker and fuses; and To accomplish thermal design for two electrical heat tracing segments: One at C-106 tank riser 7 (CCTV) and one at the exhaust hatchway (condensate drain). Contents include: C-Farm electrical heat tracing; Cable ampacity, lighting, conduit fill and voltage drop; and Control circuit sizing and voltage drop analysis for the seismic shutdown system.

Bailey, J.W.

1998-08-07T23:59:59.000Z

244

Implementation of controlled phase shift gates and Collins version of Deutsch-Jozsa algorithm on a quadrupolar spin-7/2 nucleus using non-adiabatic geometric phases  

E-Print Network [OSTI]

In this work Controlled phase shift gates are implemented on a qaudrupolar system, by using non-adiabatic geometric phases. A general procedure is given, for implementing controlled phase shift gates in an 'N' level system. The utility of such controlled phase shift gates, is demonstrated here by implementing 3-qubit Deutsch-Jozsa algorithm on a 7/2 quadrupolar nucleus oriented in a liquid crystal matrix.

T. Gopinath; Anil Kumar

2009-09-22T23:59:59.000Z

245

Patient radiation dose in prospectively gated axial CT coronary angiography and retrospectively gated helical technique with a 320-detector row CT scanner  

SciTech Connect (OSTI)

Purpose: The aim of this study was to evaluate radiation dose to patients undergoing computed tomography coronary angiography (CTCA) for prospectively gated axial (PGA) technique and retrospectively gated helical (RGH) technique. Methods: Radiation doses were measured for a 320-detector row CT scanner (Toshiba Aquilion ONE) using small sized silicon-photodiode dosimeters, which were implanted at various tissue and organ positions within an anthropomorphic phantom for a standard Japanese adult male. Output signals from photodiode dosimeters were read out on a personal computer, from which organ and effective doses were computed according to guidelines published in the International Commission on Radiological Protection Publication 103. Results: Organs that received high doses were breast, followed by lung, esophagus, and liver. Breast doses obtained with PGA technique and a phase window width of 16% at a simulated heart rate of 60 beats per minute were 13 mGy compared to 53 mGy with RGH technique using electrocardiographically dependent dose modulation at the same phase window width as that in PGA technique. Effective doses obtained in this case were 4.7 and 20 mSv for the PGA and RGH techniques, respectively. Conversion factors of dose length product to the effective dose in PGA and RGH were 0.022 and 0.025 mSv mGy{sup -1} cm{sup -1} with a scan length of 140 mm. Conclusions: CTCA performed with PGA technique provided a substantial effective dose reduction, i.e., 70%-76%, compared to RGH technique using the dose modulation at the same phase windows as those in PGA technique. Though radiation doses in CTCA with RGH technique were the same level as, or some higher than, those in conventional coronary angiography (CCA), the use of PGA technique reduced organ and effective doses to levels less than CCA except for breast dose.

Seguchi, Shigenobu; Aoyama, Takahiko; Koyama, Shuji; Fujii, Keisuke; Yamauchi-Kawaura, Chiyo [Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan) and Department of Medical Technology, Nagoya Daini Red Cross Hospital, Myouken-chou, Showa-ku, Nagoya 466-8650 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan); Section of Radiological Protection, National Institute of Radiological Sciences, Anagawa, Inage-ku, Chiba 263-8555 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan)

2010-11-15T23:59:59.000Z

246

Analytical expressions for the gate utilization factors of passive multiplicity counters including signal build-up  

SciTech Connect (OSTI)

In the realm of nuclear safeguards, passive neutron multiplicity counting using shift register pulse train analysis to nondestructively quantify Pu in product materials is a familiar and widely applied technique. The approach most commonly taken is to construct a neutron detector consisting of {sup 3}He filled cylindrical proportional counters embedded in a high density polyethylene moderator. Fast neutrons from the item enter the moderator and are quickly slowed down, on timescales of the order of 1-2 {micro}s, creating a thermal population which then persists typically for several 10's {micro}s and is sampled by the {sup 3}He detectors. Because the initial transient is of comparatively short duration it has been traditional to treat it as instantaneous and furthermore to approximate the subsequent capture time distribution as exponential in shape. With these approximations simple expressions for the various Gate Utilization Factors (GUFs) can be obtained. These factors represent the proportion of time correlated events i.e. Doubles and Triples signal present in the pulse train that is detected by the coincidence gate structure chosen (predelay and gate width settings of the multiplicity shift register). More complicated expressions can be derived by generalizing the capture time distribution to multiple time components or harmonics typically present in real systems. When it comes to applying passive neutron multiplicity methods to extremely intense (i.e. high emission rate and highly multiplying) neutron sources there is a drive to use detector types with very fast response characteristics in order to cope with the high rates. In addition to short pulse width, detectors with a short capture time profile are also desirable so that a short coincidence gate width can be set in order to reduce the chance or Accidental coincidence signal. In extreme cases, such as might be realized using boron loaded scintillators, the dieaway time may be so short that the build-up (thermalization transient) within the detector cannot be ignored. Another example where signal build-up might be observed is when a {sup 3}He based system is used to track the evolution of the time correlated signal created by a higher multiplying item within a reflective configuration such as the measurement of a spent fuel assembly. In this work we develop expressions for the GUFs which include signal build-up.

Croft, Stephen [Los Alamos National Laboratory; Evans, Louise G [Los Alamos National Laboratory; Schear, Melissa A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

247

Universal conductance fluctuations in electrolyte-gated SrTiO{sub 3} nanostructures  

SciTech Connect (OSTI)

We report low-temperature magnetoconductance measurements of a patterned two-dimensional electron system at the surface of strontium titanate, gated by an ionic liquid electrolyte. We observe universal conductance fluctuations, a signature of phase-coherent transport in mesoscopic devices. From the universal conductance fluctuations, we extract an electron dephasing rate linear in temperature, characteristic of electron-electron interaction in a disordered conductor. The dephasing rate has a temperature-independent offset, which could possibly be explained by the presence of unscreened local magnetic moments in the sample.

Stanwyck, Sam W. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Gallagher, P.; Williams, J. R.; Goldhaber-Gordon, David [Department of Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Physics, Stanford University, Stanford, California 94305 (United States)

2013-11-18T23:59:59.000Z

248

Simple Template-Based Method to Produce Bradbury-Nielsen Gates  

Science Journals Connector (OSTI)

A Bradbury-Nielsen gate (BNG) consists of two interleaved and electrically isolated sets of wires and can transmit or deflect charged particles by applying a varying voltage difference across the two wire sets. We present a simple template-based method to fabricate \\{BNGs\\} with wire spacings as small as 50 ?m with minimal use of a microscope. The small wire spacing allows modulation rates at tens of megahertz. Using this method, we have fabricated four \\{BNGs\\} with wire spacings of 500, 200, 100, and 50 ?m using 10 ?m gold-coated tungsten wires. The performance of the four \\{BNGs\\} is characterized using an imaging detector and compared with theoretical predictions.

Oh Kyu Yoon; Ignacio A. Zuleta; Matthew D. Robbins; Griffin K. Barbula; Richard N. Zare

2007-01-01T23:59:59.000Z

249

As you prepare for your upcoming beam time, please be aware that construction is planned to update SLAC Gate 17 with RFID proximity card access hardware and to change the stairs next to the Security hut to an ADA compliant ramp. Please forward this to your proposal collaborators (and ensure that all users have registered and completed training before they arrive). This construction is scheduled to begin Tuesday 5/28 and be completed by 6/28. During this construction, access to the LCLS and SSRL buildings and experimental facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 5/28-6/28 0600-1530 (6 am-3:30 pm) Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. 1530-1800 (3:30-6:00 pm) Assumes construction will have stopped for the day; both traffic lanes will be open for vehicles. 1800-0600 (6 pm-6 am) As now, Gate 17 will be closed or barricaded overnight. PEDESTRIANS ONLY THROUGH GATE 16 5/28-6/28 The pedestrian turnstile at Gate 16A will not change. The turnstile is available for pedestrian use 24/7 as long as the individual has a valid SLAC ID badge (and there is a guard at Gate 30 to 'buzz' them through). 0700-1600 (6 am-4 pm) Pedestrians who would normally walk through Gate 17 will instead follow the detour to Gate 16 swing gate which will be unlocked and staffed by Security. A valid SLAC ID badge is needed to enter; new users without IDs will be allowed to proceed for check-in and badging after confirmation with the User Research Administration Office (see detour map attached). FYI - After the construction is completed and proximity card readers are fully functional, users and staff will enter Gates 17 and 30 using an activated RFID proximity card. More details to follow.  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Automated Proximity Access at Gate 17 and Sector 30 Automated Proximity Access at Gate 17 and Sector 30 New SLAC ID badges with embedded RFID are used to activate these gates and for off-hours access at the main entrance off Sand Hill Road as well as Alpine Road (gates will be accessible 24/7) . New user badges include this proximity gate activation feature, but older photo IDs need to be updated. Users are advised to register, complete training and contact the User Research Administration (URA) office before arrival for beam time to help facilitate access. During the transition period, July 26-August 9, 2013 users can inform Security at Gate 17 that they are checking in and proceed to the URA office in Building 120; however, after August 9 th , users without a proximity activated ID need to stop at

250

Temperature dependence of a high- T c single-flux-quantum logic gate up to 50 K  

Science Journals Connector (OSTI)

Basic characteristics of a simple single-flux-quantum (SFQ) logic gate using high- T c material and Josephson junction ( NdBa 2 Cu 3 O 7?? and focused ion beamjunction) have been investigated. The logic gate consists of an rf-superconducting quantum interference device (rf-SQUID) and a dc-SQUID. In the logic gate elementary SFQ logic operations such as generating SFQ (dc/SFQ) and providing simultaneous readout (SFQ/dc) have been confirmed up to 50 K. The temperature dependencies of the output voltage level and the critical current-normal resistance (I c R n ) product were compared and the decreasing tendency of the output voltage level for increasing temperature was found to be more rapid than that of the I c R n product.

Kazuo Saitoh; Tadashi Utagawa; Youichi Enomoto

1998-01-01T23:59:59.000Z

251

Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors  

SciTech Connect (OSTI)

Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

Han, Jaeheon [Department of Electronic Engineering, Kangnam University, 111 Gugal-dong, Giheung-gu, Yongin-city, Gyeonggi-do, Korea 446-702 (Korea, Republic of)

2011-12-23T23:59:59.000Z

252

Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si  

SciTech Connect (OSTI)

When metal electrodes are deposited on a high-{kappa} metal-oxide/SiO{sub 2}/Si stack, chemical interactions may occur both at the metal/high-{kappa} and the high-{kappa}/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO{sub 2}/SiO{sub 2}/Si stacks causes reduction of the SiO{sub 2} interfacial layer and (to a lesser extent) the HfO{sub 2} layer. Silicon atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for titanium-silicon interdiffusion through the high-{kappa} film in the presence of a titanium gate in crystalline HfO{sub 2} films is also reported.

Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny [Departments of Physics and Chemistry, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854 (United States); Lysaght, Pat S.; Bersuker, Gennadi I. [Sematech, Austin, Texas 78741 (United States)

2007-09-26T23:59:59.000Z

253

Structure of a Blm10 Complex Reveals Common Mechanisms for Proteasome Binding and Gate Opening  

SciTech Connect (OSTI)

The proteasome is an abundant protease that is critically important for numerous cellular pathways. Proteasomes are activated in vitro by three known classes of proteins/complexes, including Blm10/PA200. Here, we report a 3.4 {angstrom} resolution crystal structure of a proteasome-Blm10 complex, which reveals that Blm10 surrounds the proteasome entry pore in the 1.2 MDa complex to form a largely closed dome that is expected to restrict access of potential substrates. This architecture and the observation that Blm10 induces a disordered proteasome gate structure challenge the assumption that Blm10 functions as an activator of proteolysis in vivo. The Blm10 C terminus binds in the same manner as seen for 11S activators and inferred for 19S/PAN activators and indicates a unified model for gate opening. We also demonstrate that Blm10 acts to maintain mitochondrial function. Consistent with the structural data, the C-terminal residues of Blm10 are needed for this activity.

Sadre-Bazzaz, K.; Robinson, H.; Whitby, F. G.; Formosa, T.; Hill, C. P.

2010-03-12T23:59:59.000Z

254

Image enhancement using a range gated MCPII video system with a 180-ps FWHM shutter  

SciTech Connect (OSTI)

The video image of a target submerged in a scattering medium was improved through the use of range gating techniques. The target, an Air Force resolution chart, was submerged in 18 in. of a colloidal suspension of tincture green soap in water. The target was illuminated with pulsed light from a Raman shifted, frequency-doubled, ND:YAG laser having a wavelength of 559 mm and a width of 20 ps FWHM. The laser light reflected by the target along with the light scattered by the soap, was imaged onto a microchannel-plate image intensifier (MCPII). The output from the MCPII was then recorded with a RS-170 video camera and a video digitizer. The MCPII was gated on with a pulse synchronously timed to the laser pulse. The relative timing between the reflected laser pulse and the shuttering of the MCPII determined the distance to the imaged region. The resolution of the image was influenced by the MCPII`s shutter time. A comparison was made between the resolution of images obtained with 6 ns, 500 ps and 180 ps FWHM (8 ns, 750 ps and 250 ps off-to-off) shutter times. it was found that the image resolution was enhanced by using the faster shutter since the longer exposures allowed light scattered by the water to be recorded too. The presence of scattered light in the image increased the noise, thereby reducing the contrast and the resolution.

Thomas, M.C. [Special Technologies Laboratory, Santa Barbara, CA (United States); Yates, G.J. [Los Alamos National Lab., NM (United States); Zadgarino, P. [Sharpenit, Ellwood, CA (United States)

1995-09-01T23:59:59.000Z

255

The elusive hair cell gating spring, a potential role for the lipid membrane  

Science Journals Connector (OSTI)

Deflection of auditory hair cell hair bundle results in a nonlinear (i.e. non Hookean) force-displacement relationships whose molecular mechanism remains elusive. A gating spring model posits that mechanosensitive channels are in series with a spring such that channel opening puts the activation gate in series with the spring thus reducing spring extension until further stimulation is provided. Here we present a theoretical analysis of whether the lipid membrane might be the source of nonlinearity. A hair bundle kinematic model is coupled with a lipid membrane model that includes a diffusible compartment into which the tip-link embeds and a minimally diffusive reservoir pool. Using physiological parameters this model was capable of reproducing nonlinear force-displacement plots including a negative stiffness component but required a standing tip-link tension. In addition this model suggests the mechanotransducer channel is most sensitive to curvature forces that are located within 2 nm of the tip-link. [Work supported in part by Grant Nos. R01-DC07910 and R01-DC03896 from the NIDCD of NIH and by The Timoshenko fund from Mechanical Engineering Department at Stanford University].

Charles R. Steele; Sunil Puria

2013-01-01T23:59:59.000Z

256

Mess(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Mess(ge)rinne f, (n), Messkanal m ? flume, sluice, measuring flume, measuring sluice, meter flume, measurement flume, launder, measurement sluice, meter sluice [A channel in which water i...

2013-01-01T23:59:59.000Z

257

In Proceedings of the 8th IEEE International Conference on Tools with Artificial Intelligence, Toulouse, France, 1996. GATE: An Environment to Support Research and Development  

E-Print Network [OSTI]

describe a software environment to support research and development in natural language (NL) engineering, Toulouse, France, 1996. GATE: An Environment to Support Research and Development in Natural Language. This environment ­ GATE (General Architecture for Text Engineering) ­ aims to advance research in the area

Gaizauskas, Rob

258

In Proceedings of the 8th IEEE International Conference on Tools with Artificial Intelligence, Toulouse, France, 1996. GATE: An Environment to Support Research and Development  

E-Print Network [OSTI]

describe a software environment to support research and development in natural language (NL) engineering, Toulouse, France, 1996. GATE: An Environment to Support Research and Development in Natural Language. This environment -- GATE (General Architecture for Text Engineering) -- aims to advance research in the area

Gaizauskas, Rob

259

Modulation of conductance and superconductivity by top-gating in LaAlO{sub 3}/SrTiO{sub 3} 2-dimensional electron systems  

SciTech Connect (OSTI)

We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO{sub 3}/SrTiO{sub 3} interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO{sub 3} films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO{sub 3} substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and complete on/off switching of the interface (super-)conductivity, while maintaining the usual, intrinsic characteristics for these LaAlO{sub 3}/SrTiO{sub 3} interfaces when no gate voltage is applied.

Eerkes, P. D.; Wiel, W. G. van der; Hilgenkamp, H. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)] [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2013-11-11T23:59:59.000Z

260

Assesment of Riverbed Change Due to the Operation of a Series of Gates in a Natural River  

E-Print Network [OSTI]

the Mesh .............................................................. 87 Figure 63 Study Area in 2-D Model ......................................................................... 88 viii Figure 64 Comparison of Cross Sections between 1-D... Characteristics from Estuary to Bakje Weir ........................... 123 Figure 88 Temporal Comparison of Hydraulic Characteristics ............................... 125 Figure 89 Mass Change from Sejong Weir to Daechung Dam by Gate Operation . 129...

Kim, Zooho

2013-03-13T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study  

E-Print Network [OSTI]

The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh conditions that elucidate the role of oxygen in the functioning of silicon carbide field-effect gas sensors hydrogen-depleted state; competition between hydrogen oxidation and hydrogen diffusion to metal/ oxide

Tobin, Roger G.

262

Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause severe lifetime degradation in  

E-Print Network [OSTI]

Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause mechanisms are bias temperature instability (BTI) [1] and hot-carrier injection (HCI) [2], both of which can is compounded by thermal feedback, since active devices located at die hot spots operate at an elevated

Lipasti, Mikko H.

263

International Conference on Internet Computing. Las Vegas, Nevada, p. 620 626. 23 26 June MONSTERS AT THE GATE  

E-Print Network [OSTI]

, (2) Web agents are searching for a wide variety of information, with 60% of the terms used being: terms exactly as entered by the given user. Data Analysis With these three fields, we located initial June 2003. MONSTERS AT THE GATE: WHEN SOFTBOTS VISIT WEB SEARCH ENGINES Bernard J. Jansen and Amanda S

Jansen, James

264

Drug Release from Self-Assembled Inorganic?Organic Hybrid Gels and Gated Porosity Detected by Positron Annihilation Lifetime Spectroscopy  

Science Journals Connector (OSTI)

Drug Release from Self-Assembled Inorganic?Organic Hybrid Gels and Gated Porosity Detected by Positron Annihilation Lifetime Spectroscopy ... Institute of Physical Chemistry, University of Mnster, Corrensstrasse 36, 48149 Mnster, Germany, CSIRO Manufacturing and Infrastructure Technology, Victoria, Australia, and School of Chemistry, Monash University, Clayton Victoria, Australia ...

Ansgar Bgershausen; Steven J. Pas; Anita J. Hill; Hubert Koller

2006-01-06T23:59:59.000Z

265

Voltage-and calcium-dependent gating of TMEM16A/Ano1 chloride channels are physically  

E-Print Network [OSTI]

Voltage- and calcium-dependent gating of TMEM16A/Ano1 chloride channels are physically coupled by the first intracellular loop Qinghuan Xiaoa , Kuai Yua , Patricia Perez-Cornejob , Yuanyuan Cuia , Jorge in the first intracellular loop that is crucial for both Ca2+ and voltage sensing. Deleting 448EAVK

266

Test Set Reordering Using the Gate Exhaustive Test Metric Kyoung Youn Cho and Edward J. McCluskey  

E-Print Network [OSTI]

Test Set Reordering Using the Gate Exhaustive Test Metric Kyoung Youn Cho and Edward J. Mc kycho@crc.stanford.edu Abstract When a test set size is larger than desired, some patterns must be dropped. This paper presents a systematic method to reduce test set size; the method reorders a test set

Stanford University

267

IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 183 Externally Assembled Gate-All-Around Carbon  

E-Print Network [OSTI]

-All-Around Carbon Nanotube Field-Effect Transistor Zhihong Chen, Member, IEEE, Damon Farmer, Sheng Xu, Roy Gordon USA (e-mail: zchen@us.ibm.com; avouris@ us.ibm.com). D. Farmer is with the School of Engineering demonstrate a gate-all-around single- wall carbon nanotube field-effect transistor. This is the first suc

268

210 nature neuroscience volume 5 no 3 march 2002 Calcium entry into cells through voltage-gated Ca2+ channels  

E-Print Network [OSTI]

voltage-gated Ca2+ channels initiates a wide range of cellular processes including protein phosphorylation, gene expression and neurotransmitter release1. Neuronal Ca2+ channels consist of a pore-forming 1 by neurotransmitters inhibits Cav2.1 and Cav2.2 channels, which mediate P/Q-type and N- type Ca2+ currents

Palczewski, Krzysztof

269

PUBLISHED ONLINE: 31 AUGUST 2014 | DOI: 10.1038/NPHYS3049 Gate-tunable superconducting weak link and  

E-Print Network [OSTI]

to control transmission across the device, and conductance measurements are carried out with standard lock Lee, James R. Williams and David Goldhaber-Gordon* Two-dimensional electron systems in gallium they are easily modulated by voltages on nanopatterned gate electrodes. Electron systems at oxide interfaces hold

Loss, Daniel

270

Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature  

SciTech Connect (OSTI)

Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al{sub 2}O{sub 3} gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?C.

Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

2014-10-21T23:59:59.000Z

271

High-speed and bi-stable electrolysis-bubble actuated planar micro gate valves are demonstrated in this paper.  

E-Print Network [OSTI]

SUMMARY High-speed and bi-stable electrolysis-bubble actuated planar micro gate valves are demonstrated in this paper. The speed of previous low power planar microvalves was limited by the bubble collapse process. In addition bi-stability was unreliable. In this work, surface tension is used

Liepmann, Dorian

272

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability  

E-Print Network [OSTI]

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability N 2007; published online 17 January 2008 This work investigates the role of hydrogen and nitrogen in a Ge. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from

Misra, Durgamadhab "Durga"

273

Posters Single-Column Model and Cumulus Ensemble Model Simulations of GATE Data  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

3 3 Posters Single-Column Model and Cumulus Ensemble Model Simulations of GATE Data D. A. Randall and K.-M Xu Colorado State University Department of Atmospheric Science Fort Collins, Colorado Introduction Our project for the Atmospheric Radiation Measurement (ARM) Program consists of developing and demonstrating improved cloud formation parameterizations using a single-column model (SCM), a cumulus ensemble model (CEM), and ARM data. These two models can be driven with large-scale forcing (e.g., vertical motion) as observed in ARM. Each model produces a field of clouds and the associated radiation and precipitation fields. The SCM does so through its physical parameterizations, while the CEM does so by directly simulating convective cloud circulations. The improved parameterizations tested in this way will be

274

Precipitation Processes During ARM (1997), TOGA COARE (1992), GATE (1974), SCSMEX (1998), and KWAJEX (1999): Con...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Precipitation Processes During ARM (1997), TOGA Precipitation Processes During ARM (1997), TOGA COARE (1992), GATE (1974), SCSMEX (1998), and KWAJEX (1999): Consistent 2D and 3D Cloud Resolving Model Simulations W.-K Tao, C.-L. Shie, J. Simpson, D. Starr, D. Johnson, and Y. Sud Mesoscale Atmospheric Process Branch (Code 912) Laboratory for Atmospheres National Aeronautics and Space Administration Goddard Space Flight Center Greenbelt, Maryland Introduction A basic characteristic of cloud-resolving models (CRMs) is that their governing equations are non- hydrostatic since the vertical and horizontal scales of convection are similar. Such models are also necessary in order to allow gravity waves, such as those triggered by clouds, to be resolved explicitly. CRMs use sophisticated and physically realistic parameterizations of cloud microphysical processes

275

Difference of operation mechanisms in SWNTs network FETs studied via scanning gate microscopy  

SciTech Connect (OSTI)

Field effect transistors (FETs) whose channel is composed of a network of single wall carbon nanotubes (SWNTs) have been studied to investigate the mechanism of the device operation via scanning gate microscopy (SGM) at room temperature. We observed different SGM response in networks of SWNTs either synthesized by CoMoCAT process or semiconducting enriched by density gradient ultracentrifuge process. In the former case, SGM response was observed at specific inter-tube junctions suggesting a Schottky junction formed with semiconducting and metallic SWNTs in the network. In contrast, multiple concentric rings in the SGM response are observed within the tubes in a network of the latter SWNTs suggesting a possibility of quantum mechanical transport at room-temperature. Different type of SGM responses are confirmed in the two kinds of SWNTs networks, nevertheless such active positions would likely have an important role in the FET operation mechanism in each network.

Wei, Xiaojun; Matsunaga, Masahiro; Yahagi, Tatsurou; Maeda, Kenji; Ochiai, Yuichi; Aoki, Nobuyuki [Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522 (Japan); Bird, Jonathan P. [Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY 14260-1920 (United States); Ishibashi, Koji [Advanced Device Laboratory, RIKEN, Wako, Saitama 351-0198 (Japan)

2013-12-04T23:59:59.000Z

276

The accelerated site technology deployment program presents the segmented gate system  

SciTech Connect (OSTI)

The Department of Energy (DOE) is working to accelerate the acceptance and application of innovative technologies that improve the way the nation manages its environmental remediation problems. The DOE Office of Science and Technology established the Accelerated Site Technology Deployment Program (ASTD) to help accelerate the acceptance and implementation of new and innovative soil and ground water remediation technologies. Coordinated by the Department of Energy's Idaho Office, the ASTD Program reduces many of the classic barriers to the deployment of new technologies by involving government, industry, and regulatory agencies in the assessment, implementation, and validation of innovative technologies. The paper uses the example of the Segmented Gate System (SGS) to illustrate how the ASTD program works. The SGS was used to cost effectively separate clean and contaminated soil for four different radionuclides: plutonium, uranium, thorium, and cesium. Based on those results, it has been proposed to use the SGS at seven other DOE sites across the country.

PATTESON,RAYMOND; MAYNOR,DOUG; CALLAN,CONNIE

2000-02-24T23:59:59.000Z

277

A New Gated X-Ray Detector for the Orion Laser Facility  

SciTech Connect (OSTI)

Gated X-Ray Detectors (GXD) are considered the work-horse target diagnostic of the laser based inertial confinement fusion (ICF) program. Recently, Los Alamos National Laboratory (LANL) has constructed three new GXDs for the Orion laser facility at the Atomic Weapons Establishment (AWE) in the United Kingdom. What sets these three new instruments apart from the what has previously been constructed for the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) is: improvements in detector head microwave transmission lines, solid state embedded hard drive and updated control software, and lighter air box design and other incremental mechanical improvements. In this paper we will present the latest GXD design enhancements and sample calibration data taken on the Trident laser facility at Los Alamos National Laboratory using the newly constructed instruments.

Clark, David D. [Los Alamos National Laboratory; Aragonez, Robert J. [Los Alamos National Laboratory; Archuleta, Thomas N. [Los Alamos National Laboratory; Fatherley, Valerie E. [Los Alamos National Laboratory; Hsu, Albert H. [Los Alamos National Laboratory; Jorgenson, H. J. [Los Alamos National Laboratory; Mares, Danielle [Los Alamos National Laboratory; Oertel, John A. [Los Alamos National Laboratory; Oades, Kevin [Atomic Weapons Establishment; Kemshall, Paul [Atomic Weapons Establishment; Thomas, Philip [Atomic Weapons Establishment; Young, Trevor [Atomic Weapons Establishment; Pederson, Neal [VI Control Systems

2012-08-08T23:59:59.000Z

278

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics  

SciTech Connect (OSTI)

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2?V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure?gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

Sangwan, Vinod K.; Jariwala, Deep; McMorrow, Julian J.; He, Jianting; Lauhon, Lincoln J. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Everaerts, Ken [Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Grayson, Matthew [Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States); Marks, Tobin J., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu; Hersam, Mark C., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

2014-02-24T23:59:59.000Z

279

Molecular doping for control of gate bias stress in organic thin film transistors  

SciTech Connect (OSTI)

The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

Hein, Moritz P., E-mail: hein@iapp.de; Lssem, Bjrn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K. [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany)] [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany); Zakhidov, Alexander A. [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)] [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany); Leo, Karl [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany) [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany); Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)

2014-01-06T23:59:59.000Z

280

Calibration of a gated flat field spectrometer as a function of x-ray intensity  

SciTech Connect (OSTI)

We present an experimental determination of the response of a gated flat-field spectrometer at the Shenguang-II laser facility. X-rays were emitted from a target that was heated by laser beams and then were divided into different intensities with a step aluminum filter and collected by a spectrometer. The transmission of the filter was calibrated using the Beijing Synchrotron Radiation Facility. The response characteristics of the spectrometer were determined by comparing the counts recorded by the spectrometer with the relative intensities of the x-rays transmitted through the step aluminum filter. The response characteristics were used to correct the transmission from two shots of an opacity experiment using the same samples. The transmissions from the two shots are consistent with corrections, but discrepant without corrections.

Xiong, Gang; Yang, Guohong; Li, Hang; Zhang, Jiyan, E-mail: zhangjiyanzjy@sina.com; Zhao, Yang; Hu, Zhimin; Wei, Minxi; Qing, Bo; Yang, Jiamin; Liu, Shenye; Jiang, Shaoen [Research Center of Laser Fusion, China Academy of Engineering Physics, P. O. Box 919-986, Mianyang 621900 (China)] [Research Center of Laser Fusion, China Academy of Engineering Physics, P. O. Box 919-986, Mianyang 621900 (China)

2014-04-15T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Fast and reliable automated ventriculography for gated blood-pool studies  

SciTech Connect (OSTI)

A set of algorithms, requiring only one single operator-interaction and minimal running time, has been generated to analyze left-ventricular function from cardiac gated Tc-99m Blood-pool Nuclear Medicine scintigrams (CBPS). The process depends mainly on an optimal edge enhancement filter derived in the frequency domain and applied to the study via FFT. The bandpass filter is based on Prolate Spheroidal wave functions and was described by Shanmugam et al in 1979. It maximizes output in the vicinity of edges, and is adapted here to enhance the ventricular region of interest (ROI) yielding images with sharp edges and good signal-to-noise ratio (SNR). This procedure does not require previous background subtraction from initial images in order to adequately define left-ventricular contours. A filter format has been chosen which will allow successful performance of the technique over a wide range of CBPS. The filtered image is then scanned and, on the original frame edges around ROI are marked and counts within ROI are defined. It will automatically run for any allowed number or size of frames. Processing time averages less than one minute when employing an Array Processor for a set of 32 64x64 pixel frames. Nuclear Medicine image processing applications of such filter have not been reported to date. This process has been tested on variable rate, variable ejection fraction, known volume Vanderbilt cardiac phantom; with maximum deviation of 3.5% and estimated standard deviation (SD) of 1.7%. When compared to other processes currently available, this technique is clearly more reliable due to its accuracy, speed and simplicity. It has also been used to determine ventricular volumes from gated SPECT images, with a respectable SD of 2.8%.

Lima, M.G.

1984-01-01T23:59:59.000Z

282

?-Conotoxin KIIIA Derivatives with Divergent Affinities versus Efficacies in Blocking Voltage-Gated Sodium Channels  

Science Journals Connector (OSTI)

Because of their facile chemical synthesis, KIIIA analogues that had as a core structure the disulfide-depleted KIIIA[C1A,C2U,C9A,C15U] (where U is selenocysteine) or ddKIIIA were used. ... Abbreviations: dap, diaminoproprionate; ddKIIIA, disulfide-depleted ?-conotoxin KIIIA, i.e., KIIIA[C1A,C2U,C9A,C5U], where U is selenocysteine; ddKIIIA[K7X], ddKIIIA with residue X in position 7; ddKIIIANaV, binary complex of ddKIIIA and NaV; ddKIIIA[K7X]NaV, binary complex of ddKIIIA[K7X] and NaV; ddKIIIA[K7X]TTXNaV, ternary complex of ddKIIIA[K7X], TTX, and NaV; GIIIA, ?-conotoxin GIIIA; INa, sodium current; KIIIA, ?-conotoxin KIIIA; KIIIA[K7A], ?-conotoxin KIIIA[K7A]; NaV, ?-subunit of the voltage-gated sodium channel; rINa, residual sodium current; TTX, tetrodotoxin; TTXNaV, binary complex of TTX and NaV; VGSC, voltage-gated sodium channel. ... The long moniker of ddKIIIA[K7X] is KIIIA[C1A,C2U,K7X,C9A,C15U], where residue X at position 7 was either Ala, Asp, Gly, Leu, Lys (i.e., ddKIIIA), Phe, Ser, Thr, Val, or diaminoproprionate (dap). ...

Min-Min Zhang; Tiffany S. Han; Baldomero M. Olivera; Grzegorz Bulaj; Doju Yoshikami

2010-05-11T23:59:59.000Z

283

Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming  

SciTech Connect (OSTI)

To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2009-11-15T23:59:59.000Z

284

As you prepare for your upcoming beam time, please be aware that construction is planned to update SLAC Gate 17 with RFID proximity card access hardware and to change the stairs next to the Security hut to an ADA compliant ramp. Please forward this to your proposal collaborators (and ensure that all users have registered and completed training before they arrive). This construction is scheduled to begin Tuesday 5/28 and be completed by 6/28. During this construction, access to the LCLS and SSRL buildings and experimental facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 5/28-6/28 0600-1530 (6 am-3:30 pm) Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. 1530-1800 (3:30-6:00 pm) Assumes construction will have stopped for the day; both traffic lanes will be open for vehicles. 1800-0600 (6 pm-6 am) As now, Gate 17 will be closed or barricaded overnight. PEDESTRIANS ONLY THROUGH GATE 16 5/28-6/28 The pedestrian turnstile at Gate 16A will not change. The turnstile is available for pedestrian use 24/7 as long as the individual has a valid SLAC ID badge (and there is a guard at Gate 30 to 'buzz' them through). 0700-1600 (6 am-4 pm) Pedestrians who would normally walk through Gate 17 will instead follow the detour to Gate 16 swing gate which will be unlocked and staffed by Security. A valid SLAC ID badge is needed to enter; new users without IDs will be allowed to proceed for check-in and badging after confirmation with the User Research Administration Office (see detour map attached). FYI - After the construction is completed and proximity card readers are fully functional, users and staff will enter Gates 17 and 30 using an activated RFID proximity card. More details to follow.  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Building 137 Building 137 Bldg. 270 CONSTRUCTION IMPACTS PEDESTRIAN AND VEHICLE ACCESS THROUGH SLAC SECURITY GATE 17 ~ May 28-June 28, 2013 The stairs next to the Gate 17 Guard House will be replaced with an ADA compliant ramp; the turnstile and fence at SLAC Gate 17 will be updated with RFID proximity card access hardware. During this construction, access beyond the fence, including the SSRL and LCLS buildings and user facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 Security will continue to check for valid ID badges. 0600-1530 (6 am-3:30 pm) - Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. Security will 1530-1800 (3:30-6:00 pm) - Assuming construction has

285

Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation  

SciTech Connect (OSTI)

Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

Yamashita, Y. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Yoshikawa, H.; Kobayashi, K. [National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Chikyo, T. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-01-28T23:59:59.000Z

286

Note: Design and construction of a simple and reliable printed circuit board-substrate Bradbury-Nielsen gate for ion mobility spectrometry  

Science Journals Connector (OSTI)

A less laborious structure-simple and performance-reliable printed circuit board (PCB) based Bradbury-Nielsen gate for high-resolution ion mobility spectrometry was introduced and investigated. The gate substrate was manufactured using a PCB etching process with small holes (? 0.1 mm) drilled along the gold-plated copper lines. Two interdigitated sets of rigid stainless steel spring wire (? 0.1 mm) that stands high temperature and guarantees performance stability were threaded through the holes. Our homebuilt ion mobilityspectrometer mounted with the gate gave results of about 40 for resolution while keeping a signal intensity of over 0.5 nano-amperes.

Yongzhai Du; Huaiwen Cang; Weiguo Wang; Fenglei Han; Chuang Chen; Lin Li; Keyong Hou; Haiyang Li

2011-01-01T23:59:59.000Z

287

Comparison Of Intake Gate Closure Methods At Lower Granite, Little Goose, Lower Monumental, And Mcnary Dams Using Risk-Based Analysis  

SciTech Connect (OSTI)

The objective of this report is to compare the benefits and costs of modifications proposed for intake gate closure systems at four hydroelectric stations on the Lower Snake and Upper Columbia Rivers in the Walla Walla District that are unable to meet the COE 10-minute closure rule due to the installation of fish screens. The primary benefit of the proposed modifications is to reduce the risk of damage to the station and environs when emergency intake gate closure is required. Consequently, this report presents the results and methodology of an extensive risk analysis performed to assess the reliability of powerhouse systems and the costs and timing of potential damages resulting from events requiring emergency intake gate closure. As part of this analysis, the level of protection provided by the nitrogen emergency closure system was also evaluated. The nitrogen system was the basis for the original recommendation to partially disable the intake gate systems. The risk analysis quantifies this protection level.

Gore, Bryan F.; Blackburn, Tyrone R.; Heasler, Patrick G.; Mara, Neil L.; Phan, Hahn K.; Bardy, David M.; Hollenbeck, Robert E.

2001-01-19T23:59:59.000Z

288

Forbidden Gates: How Genetics, Robotics, Artificial Intelligence, Synthetic Biology, Nanotechnology, and Human Enhancement Herald The Dawn Of TechnoDimensional Spiritual Warfare  

Science Journals Connector (OSTI)

While Forbidden Gates includes fresh insights for traditional, tried and true methods of overcoming darkness, it also unveils for the first time how breakthrough advances in science, technology, and philosophyincluding cybernetics, bio-engineering, nanotechnology, ...

Thomas R. Horn; Nita F. Horn

2011-01-01T23:59:59.000Z

289

High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor  

SciTech Connect (OSTI)

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

Ono, S., E-mail: shimpei@criepi.denken.or.jp [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Husermann, R. [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan) [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland); Chiba, D. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan) [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 322-0012 (Japan); Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan); Shimamura, K.; Ono, T. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)] [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Batlogg, B. [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)] [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)

2014-01-06T23:59:59.000Z

290

Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit  

Broader source: Energy.gov [DOE]

Presentation given by University of Alabama at Birmingham at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE...

291

Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit  

Broader source: Energy.gov [DOE]

Presentation given by University of Alabama at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center of...

292

Impact of Chemical States on the Effective Work Function of Metal Gate and High-kappa Dielectric Materials on Novel Heterostructures  

E-Print Network [OSTI]

An experimental and theoretical approach is taken to determine the effect of a heterojunction on the effective work function in a metal/high-? gate stack, the characteristics of aqueous hydrochloric acid cleaned (aq-HCl) GaN surface...

Coan, Mary

2012-10-19T23:59:59.000Z

293

Mitigation Action Plan for Los Banos - Gates (Path 15) Transmission Project (DOE/EIS-0128) (12/3/03)  

Broader source: Energy.gov (indexed) [DOE]

2 Date: December 3, 2003 1 2 Date: December 3, 2003 1 Western Area Power Administration Mitigation Action Plan for the Los Banos - Gates (Path 15) Transmission Project 1.0 INTRODUCTION 1.1 HISTORY AND BACKGROUND In May 2001, Secretary of Energy Spencer Abraham directed the Western Area Power Administration (Western) to take the first steps, including the preparation of environmental studies, toward developing the Los Banos - Gates Transmission Project, also known as the Path 15 Project. This directive was issued to carry out a recommendation in the May 2001 National Energy Policy. Western is a power marketing administration within the Department of Energy (DOE) whose role is to market and transmit electricity from multi-use water projects in the western United States, including California. The Path 15 Project, located in California's western

294

(DOE/EIS-0128): Mitigation Action Plan for the Los Banos-Gates Transmission project 1/28/03  

Broader source: Energy.gov (indexed) [DOE]

Date: ____________________________ 1 Date: ____________________________ 1 Western Area Power Administration Mitigation Action Plan for the Los Banos - Gates (Path 15) Transmission Project 1.0 INTRODUCTION 1.1 HISTORY AND BACKGROUND In May 2001, Secretary of Energy Spencer Abraham directed the Western Area Power Administration (Western) to take the first steps, including the preparation of environmental studies, toward developing the Los Banos - Gates Transmission Project, also known as the Path 15 Project. This directive was issued to carry out a recommendation in the May 2001 National Energy Policy. Western is a Power Marketing Administration within the Department of Energy (DOE) whose role is to market and transmit electricity from multi- use water projects in the western United States, including California. The

295

Dilation x-ray imager a new/faster gated x-ray imager for the NIF  

SciTech Connect (OSTI)

As the yield on implosion shots increases it is expected that the peak x-ray emission reduces to a duration with a FWHM as short as 20 ps for {approx}7 Multiplication-Sign 10{sup 18} neutron yield. However, the temporal resolution of currently used gated x-ray imagers on the NIF is 40-100 ps. We discuss the benefits of the higher temporal resolution for the NIF and present performance measurements for dilation x-ray imager, which utilizes pulse-dilation technology [T. J. Hilsabeck et al., Rev. Sci. Instrum. 81, 10E317 (2010)] to achieve x-ray imaging with temporal gate times below 10 ps. The measurements were conducted using the COMET laser, which is part of the Jupiter Laser Facility at the Lawrence Livermore National Laboratory.

Nagel, S. R.; Bell, P. M.; Bradley, D. K.; Ayers, M. J.; Barrios, M. A.; Felker, B.; Smith, R. F.; Collins, G. W.; Jones, O. S.; Piston, K.; Raman, K. S. [Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550 (United States); Hilsabeck, T. J.; Kilkenny, J. D.; Chung, T.; Sammuli, B. [General Atomics, P.O. Box 85608, San Diego, California 92186-5608 (United States); Hares, J. D.; Dymoke-Bradshaw, A. K. L. [Kentech Instruments Ltd., Wallingford, Oxfordshire OX10 (United Kingdom)

2012-10-15T23:59:59.000Z

296

Interfacial Layer Growth Condition Dependent Carrier Transport Mechanisms in HfO2/SiO2 Gate Stacks  

SciTech Connect (OSTI)

The temperature and field dependent leakage current in HfO{sub 2}/SiO{sub 2} gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 C to 105 C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level ({phi}{sub t}) and activation energy (E{sub a}) increase for chemically grown IL devices. The trap level energy, ({phi}{sub t}) -0.2 eV, indicates that doubly charged oxygen vacancies (V{sup 2-}) are the active electron traps which contribute to the leakage current in these gate stacks.

Sahoo, S. K.; Misra, D.

2012-06-04T23:59:59.000Z

297

Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition  

SciTech Connect (OSTI)

We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and a top gate contact. The ZnO active channel and thin high-? HfO{sub 2} dielectric utilized are both grown by atomic layer deposition at temperatures less than 130?C, and their material and electronic properties are characterized. These SGTFTs demonstrate enhancement-mode operation with a threshold voltage of 0.91?V, electron mobility of 3.9 cm{sup 2} V{sup ?1} s{sup ?1}, and low subthreshold swing of 192?mV/decade. The devices also exhibit a unique combination of high breakdown voltages (>20?V) with low output conductances.

Ma, Alex M.; Gupta, Manisha; Shoute, Gem; Tsui, Ying Y.; Barlage, Douglas W., E-mail: barlage@ualberta.ca [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada); Afshar, Amir; Cadien, Kenneth C. [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)] [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)

2013-12-16T23:59:59.000Z

298

Highly entangled photons and rapidly responding polarization qubit phase gates in a room-temperature active Raman gain medium  

SciTech Connect (OSTI)

We present a scheme for obtaining entangled photons and quantum phase gates in a room-temperature four-state tripod-type atomic system with two-mode active Raman gain (ARG). We analyze the linear and nonlinear optical responses of this ARG system and show that the scheme is fundamentally different from those based on electromagnetically induced transparency and hence can avoid significant probe-field absorption as well as a temperature-related Doppler effect. We demonstrate that highly entangled photon pairs can be produced and rapidly responding polarization qubit phase gates can be constructed based on the unique features of the enhanced cross-phase-modulation and superluminal probe-field propagation of the system.

Hang Chao [State Key Laboratory of Precision Spectroscopy and Department of Physics, East China Normal University, Shanghai 200062 (China); Centro de Fisica Teorica e Computacional, Universidade de Lisbon, Complex Interdisciplinary, Avenida Professor Gama Pinto 2, Lisbon P-1649-003 (Portugal); Huang Guoxiang [State Key Laboratory of Precision Spectroscopy and Department of Physics, East China Normal University, Shanghai 200062 (China); Institute of Nonlinear Physics, Zhejiang Normal University, Jinhua, Zhejiang 321004 (China)

2010-11-15T23:59:59.000Z

299

Pulsed-gate measurements of the singlet-triplet relaxation time in a two-electron double quantum dot  

E-Print Network [OSTI]

-gate technique with charge sensing is used to measure the singlet-triplet relaxation time for nearly degenerate spin states in a two-electron double quantum dot. Transitions from the 1,1 charge occupancy state. At dilution refrigerator temperatures, this implies that EZeeman kBT 10 eV, or B 0.5 T. For B 0.5 T, T1 shows

Petta, Jason

300

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications  

SciTech Connect (OSTI)

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices  

SciTech Connect (OSTI)

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e{sup 2}/h. A fabrication-limited yield of 94% is achieved for the array, and a quantum yield is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

Al-Taie, H., E-mail: ha322@cam.ac.uk; Kelly, M. J. [Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, 9 J. J. Thomson Avenue, University of Cambridge, Cambridge CB3 0FA (United Kingdom) [Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, 9 J. J. Thomson Avenue, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Smith, L. W.; Xu, B.; Griffiths, J. P.; Beere, H. E.; Jones, G. A. C.; Ritchie, D. A.; Smith, C. G. [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)] [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); See, P. [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom)] [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom)

2013-06-17T23:59:59.000Z

302

Development of a Microchannel Plate-Based Gated X-ray Imager for Imaging and Spectroscopy Experiments on Z  

SciTech Connect (OSTI)

This poster describes a microchannelplate (MCP)based, gated x-ray imager developed by National Security Technologies, LLC (NSTec), and Sandia National Laboratories(SNL) over the past several years. The camera consists of a 40 mm 40 mm MCP, coated with eight 4 mm wide microstrips. The camera is gated by sending subnanosecond high-voltage pulses across the striplines. We have performed an extensive characterization of the camera, the results of which we present here. The camera has an optical gate profile width (time resolution) as narrow as 150 ps and detector uniformity of better than 30% along the length of a strip, far superior than what was achieved in previous designs. The spatial resolution is on the order of 40 microns for imaging applications and a dynamic range of between ~100 and ~1000. We also present results from a Monte Carlo simulation code developed by NSTec over the last several years. Agreement between the simulation results and the experimental measurements is very good.

Wu, M., Kruschwitz, C. A., Tibbitts, A., Rochau, G.

2011-06-24T23:59:59.000Z

303

HfO{sub x}N{sub y} gate dielectric on p-GaAs  

SciTech Connect (OSTI)

Plasma nitridation method is used for nitrogen incorporation in HfO{sub 2} based gate dielectrics for future GaAs-based devices. The nitrided HfO{sub 2} (HfO{sub x}N{sub y}) films on p-GaAs improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, hysteresis, and leakage current. An equivalent oxide thickness of 3.6 nm and a leakage current density of 10{sup -6} A cm{sup -2} have been achieved at V{sub FB}-1 V for nitrided HfO{sub 2} films. A nitride interfacial layer (GaAsO:N) was observed at HfO{sub 2}-GaAs interface, which can reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion led to a substantial enhancement in the overall dielectric properties of the HfO{sub 2} film.

Dalapati, G. K.; Sridhara, A.; Wong, A. S. W.; Chia, C. K.; Chi, D. Z. [Institute of Materials Research and Engineering, A-STAR - Agency for Science, Technology and Research, 3 Research Link, Singapore 117602 (Singapore)

2009-02-16T23:59:59.000Z

304

SNM neutron detection using a time-gated synthetic aperture hybrid approach  

SciTech Connect (OSTI)

This work focuses on using forward and adjoint transport in a hybrid application of 3-D deterministic (PENTRAN) and Monte Carlo (MCNP5) codes to model a series of neutron detector blocks. These blocks, or 'channels, ' contain a unique set of moderators with 4 atm He-3 detectors tuned to detect and profile a gross energy spectrum of a passing neutron (SNM) source. Ganging the units together as a large area system enables one to apply time gating the source-detector response to maximize signal to noise responses from a passing source with minimal background; multiple units may be positioned as a collective synthetic aperture detector array to be used as a way of performing real time neutron spectroscopy for detecting special nuclear materials in moving vehicles. The initial design, detector response coupling, confirmation of initial design functionality using adjoint transport calculations, and realistic simulation using PENTRAN and MCNP5 are presented. Future work will include optimization and application to realistic scenarios and additional sources. (authors)

Molinar, M.; Yi, C.; Edgar, C. A.; Manalo, K.; Chin, M.; Sjoden, G. [Nuclear and Radiological Engineering Program, George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 770 State Street, Atlanta GA 30332-0745 (United States)

2013-07-01T23:59:59.000Z

305

Evaluating the size-dependent quantum efficiency loss in a SiO{sub 2}-Y{sub 2}O{sub 3} hybrid gated type-II InAs/GaSb long-infrared photodetector array  

SciTech Connect (OSTI)

Growing Y{sub 2}O{sub 3} on 20?nm SiO{sub 2} to passivate a 11??m 50% cut-off wavelength long-wavelength infrared type-II superlattice gated photodetector array reduces its saturated gate bias (V{sub G,sat}) to ?7 V. Size-dependent quantum efficiency (QE) losses are evaluated from 400??m to 57??m size gated photodiode. Evolution of QE of the 57??m gated photodiode with gate bias and diode operation bias reveals different surface recombination mechanisms. At 77?K and V{sub G,sat}, the 57??m gated photodiode exhibits QE enhancement from 53% to 63%, and it has 1.2 10{sup ?5} A/cm{sup 2} dark current density at ?200?mV, and a specific detectivity of 2.3??10{sup 12} Jones.

Chen, G.; Hoang, A. M.; Razeghi, M., E-mail: razeghi@eecs.northwestern.edu [Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)

2014-03-10T23:59:59.000Z

306

Graduate Automotive Technology Education (GATE) Center for Hybrid Electric Drivetrains and Control Strategies  

SciTech Connect (OSTI)

Beginning the fall semester of 1999, The University of Maryland, Departments of Mechanical and Electrical Engineering and the Institute for Systems Research served as a U.S. Department of Energy (USDOE) Graduate Automotive Technology Education (GATE) Center for Hybrid Electric Drivetrains and Control Strategies. A key goal was to produce a graduate level education program that educated and prepared students to address the technical challenges of designing and developing hybrid electric vehicles, as they progressed into the workforce. A second goal was to produce research that fostered the advancement of hybrid electric vehicles, their controls, and other related automotive technologies. Participation ended at the University of Maryland after the 2004 fall semester. Four graduate courses were developed and taught during the course of this time, two of which evolved into annually-taught undergraduate courses, namely Vehicle Dynamics and Control Systems Laboratory. Five faculty members from Mechanical Engineering, Electrical Engineering, and the Institute for Systems Research participated. Four Ph.D. degrees (two directly supported and two indirectly supported) and seven Master's degrees in Mechanical Engineering resulted from the research conducted. Research topics included thermoelectric waste heat recovery, fuel cell modeling, pre- and post-transmission hybrid powertrain control and integration, hybrid transmission design, H{sub 2}-doped combustion, and vehicle dynamics. Many of the participating students accepted positions in the automotive industry or government laboratories involved in automotive technology work after graduation. This report discusses the participating faculty, the courses developed and taught, research conducted, the students directly and indirectly supported, and the publication list. Based on this collection of information, the University of Maryland firmly believes that the key goal of the program was met and that the majority of the participating students are now contributing to the advancement of automotive technology in this country.

David Holloway

2005-09-30T23:59:59.000Z

307

Method and infrastructure for cycle-reproducible simulation on large scale digital circuits on a coordinated set of field-programmable gate arrays (FPGAs)  

DOE Patents [OSTI]

A plurality of target field programmable gate arrays are interconnected in accordance with a connection topology and map portions of a target system. A control module is coupled to the plurality of target field programmable gate arrays. A balanced clock distribution network is configured to distribute a reference clock signal, and a balanced reset distribution network is coupled to the control module and configured to distribute a reset signal to the plurality of target field programmable gate arrays. The control module and the balanced reset distribution network are cooperatively configured to initiate and control a simulation of the target system with the plurality of target field programmable gate arrays. A plurality of local clock control state machines reside in the target field programmable gate arrays. The local clock state machines are configured to generate a set of synchronized free-running and stoppable clocks to maintain cycle-accurate and cycle-reproducible execution of the simulation of the target system. A method is also provided.

Asaad, Sameh W; Bellofatto, Ralph E; Brezzo, Bernard; Haymes, Charles L; Kapur, Mohit; Parker, Benjamin D; Roewer, Thomas; Tierno, Jose A

2014-01-28T23:59:59.000Z

308

The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean  

E-Print Network [OSTI]

Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

Richart B. Cathcart; Alexander A. Bolonkin

2007-02-04T23:59:59.000Z

309

The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean  

E-Print Network [OSTI]

Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

Cathcart, R B; Bolonkin, Alexander A.; Cathcart, Richart B.

2007-01-01T23:59:59.000Z

310

Development and Deployment of the Extended Reach Sluicing System (ERSS) for Retrieval of Hanford Single Shell Tank Waste - 14206 (DRAFT)  

SciTech Connect (OSTI)

A history of the evolution and the design development of Extended Reach Sluicer System (ERSS) is presented. Several challenges are described that had to be overcome to create a machine that went beyond the capabilities of prior generation sluicers to mobilize waste in Single Shell Tanks for pumping into Double Shell Tank receiver tanks. Off-the-shelf technology and traditional hydraulic fluid power systems were combined with the custom-engineered components to create the additional functionality of the ERSS, while still enabling it to fit within very tight entry envelope into the SST. Problems and challenges inevitably were encountered and overcome in ways that enhance the state of the art of fluid power applications in such constrained environments. Future enhancements to the ERSS design are explored for retrieval of tanks with different dimensions and internal obstacles.

Bauer, Roger E.; Figley, Reed R.; Innes, A. G.

2013-11-11T23:59:59.000Z

311

Anlisis de la funcin diastlica mediante gated-SPECT de perfusin miocrdica tras revascularizacin coronaria en el infarto agudo de miocardio  

Science Journals Connector (OSTI)

ResumenObjetivo Valorar mediante gated-SPECT de perfusin miocrdica los cambios evolutivos de la funcin diastlica despus de la revascularizacin coronaria percutnea (RCP) de un infarto agudo de miocardio (IAM). Material y mtodos Se estudiaron consecutivamente 32 pacientes (media 61,99,7 aos; 7 mujeres) mediante 2 gated-SPECT de perfusin miocrdica en reposo: la primera gated-SPECT-1 con inyeccin de una dosis de 99mTc-tetrofosmina previa a la RCP y la segunda gated-SPECT-2 entre la cuarta y quinta semana despus del IAM. Se valoraron los cambios de la velocidad mxima de llenado (Vmx) y del tiempo a la velocidad mxima de llenado (TVmx) entre ambos estudios, relacionndolos con la extensin del miocardio salvado (MS) y con los cambios observados en los volmenes telediastlico (VTD) y telesistlico (VTS) y en la fraccin de eyeccin del ventrculo izquierdo (FEVI). Resultados En la gated-SPECT-2 se observ una mejora de los parmetros de la funcin diastlica: la Vmx aument significativamente (p = 0,011) mientras que el TVmx disminuy sin alcanzar significacin estadstica (p = 0,288). En el anlisis multivariante, ajustado por variables clnicas y coronariogrficas, el aumento de la Vmx se relacion significativamente con el porcentaje de MS (p = 0,030), el aumento de la FEVI (p = 0,004) y la reduccin del VTS (p = 0,005). La mejora del TVmx solo se relacion significativamente con el porcentaje de MS (p = 0,046). Por cada cm2 de aumento del rea del MS la Vmx aument 0,01 VTD/s y la TVmx disminuy 1,14 ms. Conclusiones Tras la RCP en el IAM, la gated-SPECT de perfusin miocrdica permite valorar la mejora significativa de la funcin diastlica que se relaciona fundamentalmente con la cantidad de MS. Objective To evaluate the evolutive changes in diastolic function after percutaneous coronary revascularization (PCR) in acute myocardial infarction (AMI), using myocardial perfusion gated SPECT. Material and methods Thirty-two patients (mean 61.99.7 years, 7 women) were studied by two at rest gated SPECT: the first gated-SPECT-1 was performed with an injection of a dose of 99mTc-tetrofosmin prior to PCR and the second gated-SPECT-2 between the fourth and fifth weeks after AMI. Changes of peak filling rate (PFR) and the time to peak filling rate (TTPF) were assessed between both studies, and were related to the extent of salvaged myocardium (SM), end-diastolic (EDV) and end-systolic (ESV) volumes, and left ventricular ejection fraction (LVEF) changes. Results An improvement was observed in diastolic function parameters Gated-SPECT-2: PFR increased significantly (P=0.011) while the TTPF decreased without reaching statistical significance (P=0.288). In multivariate analysis, adjusted by clinical and coronary variables, improvement of PFR was significantly associated with percentage of SM (P=0.030), increase in LVEF (P=0.004) and with ESV volume reduction (P=0.005). Improvement of TTPF was only related significantly to the percentage of SM (P=0.046). PFR increased 0.01 EDV/sec. and TTPF decreased 1.14ms for each cm2 increase of the area of SM. Conclusions After PCR in AMI, the myocardial perfusion gated SPECT makes it possible to assess the significant improvement in diastolic function mainly related to the amount of MS.

G. Romero-Farina; S. Aguad-Bruix; M.N. Pizzi; G. Cuberas-Borrs; G. De Len; J. Castell-Conesa; D. Garca-Dorado; J. Candell-Riera

2013-01-01T23:59:59.000Z

312

Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement  

SciTech Connect (OSTI)

Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800??s) the completion of drain-stress voltage (200?V) in the off-state, the second-harmonic (SH) signals appeared within 2??m from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

Katsuno, Takashi, E-mail: e1417@mosk.tytlabs.co.jp; Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu [Toyota Central R and D Laboratories Inc., Nagakute, Aichi 480-1192 (Japan); Manaka, Takaaki; Iwamoto, Mitsumasa [Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552 (Japan)

2014-06-23T23:59:59.000Z

313

Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors  

SciTech Connect (OSTI)

Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

2010-01-01T23:59:59.000Z

314

A study on the gate voltage dependence of the activation energy in Meyer-Neldel rule for charge mobility in pentacene OTFTs  

SciTech Connect (OSTI)

A temperature analysis of the OTFT having pentacene as channel semiconductor and PMMA as gate dielectric has been performed. The experimental results have been studied by extracting the field-effect mobility of the TFTs and relating it to the sample's temperature. We have found the mobility to follow the Meyer-Neldel rule. This behavior can be considered imputable to the channel carrier hopping. The gate voltage effect on the thermal activation energy for the mobility and the asymptotic parameter has been also taken into account.

Petrosino, Mario; Rubino, Alfredo [University of Salerno, Department of Information and Electrical Engineering, via Ponte Don Melillo 1, 84084 Fisciano (Italy); Miscioscia, Riccardo [University of Salerno, Department of Information and Electrical Engineering, via Ponte Don Melillo 1, 84084 Fisciano (Italy)] [Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Centre, p.le E. Fermi 1, 80055 Portici (Italy); Girolamo del Mauro, Anna de; Rega, Romina; Cerri, Valerio; Minarini, Carla [Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Centre, p.le E. Fermi 1, 80055 Portici (Italy)

2010-06-02T23:59:59.000Z

315

HOT TOPICS: Bridge suicides (http://www.marinij.com/goldengatebridge/ci_25220172/record-number-golden-gate-bridge-suicides-recorded-2013) #MarinDrought (http://www.marinij.com/marinnews/ci_24975029/readers-share-water-saving-ideas-marindroughtt)  

E-Print Network [OSTI]

HOT TOPICS: Bridge suicides (http://www.marinij.com/goldengatebridge/ci_25220172/record-number-golden-gate-bridge://www.marinij.com/goldengatebridge/ci_25217201/golden-gate-bridge-toll-could-increase-by-1) Data center (http://www.marinij.com/data) Traffic://www.marinij.com/marinnews/ci_25202779/marin-robbery-suspect-loses-bid-stop-ij-from) Bridge toll hike (http

California at Berkeley, University of

316

Preprint of M. B. Yairi, C. W. Coldren, D. A. B. Miller, and J. S. Harris, Jr."High-Speed Quantum Well Optoelectronic Gate Based on Diffusive Conduction Recovery," in Optics in Computing '98, Pierre Chavel, David A. B. Miller, Hugo Thienpont,  

E-Print Network [OSTI]

Well Optoelectronic Gate Based on Diffusive Conduction Recovery," in Optics in Computing '98, Pierre-Speed Quantum Well Optoelectronic Gate Based on Diffusive Conduction Recovery M. B. Yairi, C. W. Coldren*, D. A-4085, USA *Solid State Laboratory, Stanford University Abstract A novel high-speed optoelectronic gate

Miller, David A. B.

317

Thermally deposited Ag-doped CdS thin film transistors with high-k rare-earth oxide Nd2O3 as gate dielectric  

Science Journals Connector (OSTI)

The performance of thermally deposited CdS thin film transistors doped with Ag has been reported. Ag-doped CdS thin films have been prepared using chemical...2O3 has been used as gate insulator. The thin film tra...

P. Gogoi

2013-03-01T23:59:59.000Z

318

In this paper we provide further evidence and verify the existence of convolution relation between transient currents of gates of a  

E-Print Network [OSTI]

between transient currents of gates of a sensitized path, power grid impulse responses and transient cur for extraction of sensitized path's circuit model from chips SPICE model. Our simulation results shows that using was developed in [11]. The main idea behind the fast simulation of transients was that the power grid structure

Plusquellic, James

319

IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 143 Fabrication and Performance of 0.25-m Gate Length  

E-Print Network [OSTI]

is limited to a volt or less, MOSFETs offer the potential for improved input power handling ability]. Depletion-mode transistors have been demonstrated with each of these gate dielectric materials; mi Object Identifier 10.1109/LED.2007.914107 Fig. 1. Cross-sectional diagram of a fabricated device

320

Thermoelectric properties of electrically gated bismuth telluride nanowires I. Bejenari,1,2,* V. Kantser,2, and A. A. Balandin1,  

E-Print Network [OSTI]

the best known thermoelectric materials for the mod- ern commercial application. These materials possess as compared to bulk bismuth telluride material. For example, the thermoelectric figure of merit ZT of the Bi2Thermoelectric properties of electrically gated bismuth telluride nanowires I. Bejenari,1,2,* V

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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321

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 11, NOVEMBER 2002 1897 A Computational Study of Thin-Body, Double-Gate,  

E-Print Network [OSTI]

­drain region is made of silicide or metal rather than heavily doped semiconductor [1]­[3]. The device offers.1109/TED.2002.804696 Fig. 1. Thin-body, double-gate SBFET with silicide/metal source and drain. Both-con- sistently with a quantum transport equation. The results show that for SBFETs with positive, effective metal

Guo, Jing

322

Control of a final gating charge transition by a hydrophobic residue in the S2 segment of a K+ channel voltage sensor  

Science Journals Connector (OSTI)

...The recording pipette resistance was 0.8 to 1.5 M...fluorometric approach to local electric field measurements in a voltage-gated...Horn R ( 2005 ) Focused electric field across the voltage...sensor reveals a focused electric field . Nature 427 : 548 553 . 18 Chen...current noise produced by elementary transitions in Shaker potassium...

Jrme J. Lacroix; Francisco Bezanilla

2011-01-01T23:59:59.000Z

323

A Comparison of Amplitude-Based and Phase-Based Positron Emission Tomography Gating Algorithms for Segmentation of Internal Target Volumes of Tumors Subject to Respiratory Motion  

SciTech Connect (OSTI)

Purpose: To quantitatively compare the accuracy of tumor volume segmentation in amplitude-based and phase-based respiratory gating algorithms in respiratory-correlated positron emission tomography (PET). Methods and Materials: List-mode fluorodeoxyglucose-PET data was acquired for 10 patients with a total of 12 fluorodeoxyglucose-avid tumors and 9 lymph nodes. Additionally, a phantom experiment was performed in which 4 plastic butyrate spheres with inner diameters ranging from 1 to 4 cm were imaged as they underwent 1-dimensional motion based on 2 measured patient breathing trajectories. PET list-mode data were gated into 8 bins using 2 amplitude-based (equal amplitude bins [A1] and equal counts per bin [A2]) and 2 temporal phase-based gating algorithms. Gated images were segmented using a commercially available gradient-based technique and a fixed 40% threshold of maximum uptake. Internal target volumes (ITVs) were generated by taking the union of all 8 contours per gated image. Segmented phantom ITVs were compared with their respective ground-truth ITVs, defined as the volume subtended by the tumor model positions covering 99% of breathing amplitude. Superior-inferior distances between sphere centroids in the end-inhale and end-exhale phases were also calculated. Results: Tumor ITVs from amplitude-based methods were significantly larger than those from temporal-based techniques (P=.002). For lymph nodes, A2 resulted in ITVs that were significantly larger than either of the temporal-based techniques (P<.0323). A1 produced the largest and most accurate ITVs for spheres with diameters of ?2 cm (P=.002). No significant difference was shown between algorithms in the 1-cm sphere data set. For phantom spheres, amplitude-based methods recovered an average of 9.5% more motion displacement than temporal-based methods under regular breathing conditions and an average of 45.7% more in the presence of baseline drift (P<.001). Conclusions: Target volumes in images generated from amplitude-based gating are larger and more accurate, at levels that are potentially clinically significant, compared with those from temporal phase-based gating.

Jani, Shyam S., E-mail: sjani@mednet.ucla.edu [Department of Radiation Oncology, David Geffen School of Medicine, University of California, Los Angeles, California (United States); Robinson, Clifford G. [Department of Radiation Oncology, Siteman Cancer Center, Washington University in St Louis, St Louis, Missouri (United States); Dahlbom, Magnus [Department of Molecular and Medical Pharmacology, David Geffen School of Medicine, University of California, Los Angeles, California (United States); White, Benjamin M.; Thomas, David H.; Gaudio, Sergio; Low, Daniel A.; Lamb, James M. [Department of Radiation Oncology, David Geffen School of Medicine, University of California, Los Angeles, California (United States)

2013-11-01T23:59:59.000Z

324

Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor  

Science Journals Connector (OSTI)

In this study we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor(FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary all the processing temperatures during FET fabrication were held below 150?C. From the grain boundary the field-effect mobility was measured at around 21.4 cm2/Vs at 297?K and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22?eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.

Masaki Hashimoto; Kensaku Kanomata; Katsuaki Momiyama; Shigeru Kubota; Fumihiko Hirose

2012-01-01T23:59:59.000Z

325

Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor  

SciTech Connect (OSTI)

In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary, all the processing temperatures during FET fabrication were held below 150 deg. C. From the grain boundary, the field-effect mobility was measured at around 21.4 cm{sup 2}/Vs at 297 K, and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22 eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.

Hashimoto, Masaki; Kanomata, Kensaku; Momiyama, Katsuaki; Kubota, Shigeru; Hirose, Fumihiko

2012-01-09T23:59:59.000Z

326

Evaluation of the Leon3 soft-core processor within a Xilinx radiation-hardened field-programmable gate array.  

SciTech Connect (OSTI)

The purpose of this document is to summarize the work done to evaluate the performance of the Leon3 soft-core processor in a radiation environment while instantiated in a radiation-hardened static random-access memory based field-programmable gate array. This evaluation will look at the differences between two soft-core processors: the open-source Leon3 core and the fault-tolerant Leon3 core. Radiation testing of these two cores was conducted at the Texas A&M University Cyclotron facility and Lawrence Berkeley National Laboratory. The results of these tests are included within the report along with designs intended to improve the mitigation of the open-source Leon3. The test setup used for evaluating both versions of the Leon3 is also included within this document.

Learn, Mark Walter

2012-01-01T23:59:59.000Z

327

Decoherence-based exploration of d-dimensional one-way quantum computation: Information transfer and basic gates  

SciTech Connect (OSTI)

We study the effects of amplitude and phase damping decoherence in d-dimensional one-way quantum computation. We focus our attention on low dimensions and elementary unidimensional cluster state resources. Our investigation shows how information transfer and entangling gate simulations are affected for d{>=}2. To understand motivations for extending the one-way model to higher dimensions, we describe how basic qudit cluster states deteriorate under environmental noise of experimental interest. In order to protect quantum information from the environment, we consider encoding logical qubits into qudits and compare entangled pairs of linear qubit-cluster states to single qudit clusters of equal length and total dimension. A significant reduction in the performance of cluster state resources for d>2 is found when Markovian-type decoherence models are present.

Tame, M. S.; Paternostro, M.; Kim, M. S. [School of Mathematics and Physics, The Queen's University, Belfast BT7 1NN (United Kingdom); Hadley, C.; Bose, S. [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom)

2006-10-15T23:59:59.000Z

328

Record of Decision for the Los Banos-Gates Transmission Project (DOE/EIS-0128-SA-01)  

Broader source: Energy.gov (indexed) [DOE]

99 99 Federal Register / Vol. 66, No. 245 / Thursday, December 20, 2001 / Notices A copy of any motion to intervene must also be served upon the representative of the RAWA specified in item h, above. p. Agency Comments-Federal, state, and local agencies are invited to file comments on the subject application for surrender of exemption. If an agency does not file comments within the time specified for filing comments, it will be presumed to have no comments. One copy of an agency's comments must also be sent to the Applicant's representative listed in item h, above. Linwood A. Watson, Jr., Acting Secretary. [FR Doc. 01-31311 Filed 12-19-01; 8:45 am] BILLING CODE 6717-01-P DEPARTMENT OF ENERGY Western Area Power Administration Los Banos-Gates Transmission Project AGENCY: Western Area Power

329

Discrimination of partial discharge electromagnetic signal in SF{sub 6} gas from external noises using phase gate control method  

SciTech Connect (OSTI)

The authors proposed phase gate control method for distinguishing frequency spectrum of electromagnetic wave caused by partial discharge (PD) in SF{sub 6} gas from external noises. They investigated the dependence of the polarity and phase angle of ac voltage on the electromagnetic wave spectrum. They derived the frequency region where PD spectrum caused by SF{sub 6} gas can be detected under noisy conditions. The authors also related quantitatively the gain of electromagnetic wave spectrum to the maximum PD charge simultaneously occurring in both SF{sub 6} gas and air. On the basis of these results, they determined the minimum detectable PD level in SF{sub 6} gas under noisy conditions as a function of measuring frequency.

Hikita, M.; Hoshino, T.; Kato, T.; Hayakawa, N.; Okubo, H. [Nagoya Univ. (Japan); Ueda, T. [Chubu Electric Power Co., Inc., Nagoya (Japan)

1996-12-31T23:59:59.000Z

330

HaNesiim Gate Gate of Aliya  

E-Print Network [OSTI]

SC60 Jacqueline Ann Ayrton Sports Hall SC61 Samuel Ayrton Sports Pavilion SC62 Sir John and Lady Cohen Swimming Pools Edith and Louis Reitman Sports Park Michael Diller Teaching Pool 90 Gershon Cherni and Materials Engineering 60 Design Application Center 61 Energy Reservoir 62 Sir John and Lady Cohen Chemistry

Vardi, Amichay

331

Applied Hydraulics Week 5 Radial Gate, Artificially Roughened Bed Reading Assignment: Chin, Ch. 3, pp. 101-114, Sections 3.2.2.1 and 3.2.2.2  

E-Print Network [OSTI]

Applied Hydraulics ­ Week 5 ­ Radial Gate, Artificially Roughened Bed Reading Assignment: Chin, Ch) as written in the Armfield Manual. Complete Experiment R (Artificially Roughened Bed) using the Armfield

Bowen, James D.

332

Inhibition of L-type and cyclic nucleotide-gated calcium channels demonstrates synergistic mechanisms for prolonging vascular contractions induced by a mimetic of thromboxane A2  

E-Print Network [OSTI]

inhibitors (nifedipine and L-cis-diltiazem, respectively) on U-46619-induced vascular contractions, segments of aorta were removed from euthanized New Zealand white rabbits (IACUC: AUS 42-02). Vessels were placed in a modified Krebs solution (6...14 | JOURNAL OF undergraduate research Inhibition of L-type and cyclic nucleotide-gated calcium channels demonstrates synergistic mechanisms for prolonging vascular contractions induced by a mimetic of thromboxane A2 Joseph W. Kellum...

Kellum, Joseph W.

2013-04-01T23:59:59.000Z

333

Spin-polarization and spin-dependent logic gates in a double quantum ring based on Rashba spin-orbit effect: Non-equilibrium Green's function approach  

SciTech Connect (OSTI)

Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from ?1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted.

Eslami, Leila, E-mail: Leslami@iust.ac.ir; Esmaeilzadeh, Mahdi, E-mail: mahdi@iust.ac.ir [Department of Physics, Iran University of Science and Technology, Tehran 16846 (Iran, Islamic Republic of)

2014-02-28T23:59:59.000Z

334

A general neural and fuzzy-neural algorithm for natural gas flow prediction in city gate stations  

Science Journals Connector (OSTI)

Abstract This paper presents an approach to predict the transmission of natural gas (NG) in city gate stations (CGSs) by neural and fuzzy neural networks. The proposed approach constructs a model that is based on a primary station data and uses it to predict the NG transmission of a secondary station. Two stations in Qazvin, Iran, are selected as case study for daily prediction. The artificial neural network (ANN) and adaptive neuro-fuzzy inference system (ANFIS) are optimized for minimum error. Results show that ANFIS is more accurate than ANN and its mean absolute percentage error (MAPE) in primary station (Qazvin no. 2 CGS) is 5.57%. Furthermore, the ANFIS prediction model is used after adaptations for the secondary station (Takestan CGS). The range of NG transmitted volume is different in the secondary station but the results show that the MAPE of prediction in Takestan station is 5.73% which is of the same order as that of the primary station. The effect of errors in the adaptation step for secondary station is investigated. This approach is useful for prediction of transmitted NG in stations with insufficient data but similar consumption and saves the cost of the construction of new prediction model for each station.

Amin Aramesh; Nader Montazerin; Abbas Ahmadi

2014-01-01T23:59:59.000Z

335

Synchronized operation by field programmable gate array based signal controller for the Thomson scattering diagnostic system in KSTAR  

SciTech Connect (OSTI)

The Thomson scattering diagnostic system is successfully installed in the Korea Superconducting Tokamak Advanced Research (KSTAR) facility. We got the electron temperature and electron density data for the first time in 2011, 4th campaign using a field programmable gate array (FPGA) based signal control board. It operates as a signal generator, a detector, a controller, and a time measuring device. This board produces two configurable trigger pulses to operate Nd:YAG laser system and receives a laser beam detection signal from a photodiode detector. It allows a trigger pulse to be delivered to a time delay module to make a scattered signal measurement, measuring an asynchronous time value between the KSTAR timing board and the laser system injection signal. All functions are controlled by the embedded processor running on operating system within a single FPGA. It provides Ethernet communication interface and is configured with standard middleware to integrate with KSTAR. This controller has operated for two experimental campaigns including commissioning and performed the reconfiguration of logic designs to accommodate varying experimental situation without hardware rebuilding.

Lee, W. R.; Park, M. K.; Lee, J. H. [National Fusion Research Institute, Gwahangno 113, Daejeon 305-333 (Korea, Republic of); Kim, H. S. [Chungnam National University, Daehak-ro 99, Daejeon 305-764 (Korea, Republic of); Kim, K. H. [Seed Core Co., Ltd., Daehak-ro 99, Daejeon 305-764 (Korea, Republic of)

2012-09-15T23:59:59.000Z

336

The Conformation of Bound GMPPNP Suggests a Mechanism for Gating the Active Site of the SRP \\{GTPase\\}  

Science Journals Connector (OSTI)

Background: The signal recognition particle (SRP) is a phylogenetically conserved ribonucleoprotein that mediates cotranslational targeting of secreted and membrane proteins to the membrane. Targeting is regulated by GTP binding and hydrolysis events that require direct interaction between structurally homologous NG \\{GTPase\\} domains of the SRP signal recognition subunit and its membrane-associated receptor, SR?. Structures of both the apo and GDP bound NG domains of the prokaryotic SRP54 homolog, Ffh, and the prokaryotic receptor homolog, FtsY, have been determined. The structural basis for the GTP-dependent interaction between the two proteins, however, remains unknown. Results: We report here two structures of the NG \\{GTPase\\} of Ffh from Thermus aquaticus bound to the nonhydrolyzable GTP analog GMPPNP. Both structures reveal an unexpected binding mode in which the ?-phosphate is kinked away from the binding site and magnesium is not bound. Binding of the GTP analog in the canonical conformation found in other \\{GTPase\\} structures is precluded by constriction of the phosphate binding P loop. The structural difference between the Ffh complex and other \\{GTPases\\} suggests a specific conformational change that must accompany movement of the nucleotide from an inactive to an active binding mode. Conclusions: Conserved side chains of the \\{GTPase\\} sequence motifs unique to the SRP subfamily may function to gate formation of the active GTP bound conformation. Exposed hydrophobic residues provide an interaction surface that may allow regulation of the GTP binding conformation, and thus activation of the GTPase, during the association of SRP with its receptor.

Savita Padmanabhan; Douglas M. Freymann

2001-01-01T23:59:59.000Z

337

G Protein-Gated Inhibitory Module of N-Type (CaV2.2) Ca2+ Channels  

Science Journals Connector (OSTI)

Summary Voltage-dependent G protein (G??) inhibition of N-type (CaV2.2) channels supports presynaptic inhibition and represents a central paradigm of channel modulation. Still controversial are the proposed determinants for such modulation, which reside on the principal ?1B channel subunit. These include the interdomain I-II loop (I-II), the carboxy tail (CT), and the amino terminus (NT). Here, we probed these determinants and related mechanisms, utilizing compound-state analysis with yeast two-hybrid and mammalian cell FRET assays of binding among channel segments and G proteins. Chimeric channels confirmed the unique importance of NT. Binding assays revealed selective interaction between NT and I-II elements. Coexpressing NT peptide with G?? induced constitutive channel inhibition, suggesting that the NT domain constitutes a G protein-gated inhibitory module. Such inhibition was limited to NT regions interacting with I-II, and G-protein inhibition was abolished within ?1B channels lacking these NT regions. Thus, an NT module, acting via interactions with the I-II loop, appears fundamental to such modulation.

Heather L. Agler; Jenafer Evans; Lai Hock Tay; Molly J. Anderson; Henry M. Colecraft; David T. Yue

2005-01-01T23:59:59.000Z

338

Measuring symmetry of implosions in cryogenic Hohlraums at the NIF using gated x-ray detectors (invited)  

SciTech Connect (OSTI)

Ignition of imploding inertial confinement capsules requires, among other things, controlling the symmetry with high accuracy and fidelity. We have used gated x-ray imaging, with 10 {mu}m and 70 ps resolution, to detect the x-ray emission from the imploded core of symmetry capsules at the National Ignition Facility. The measurements are used to characterize the time dependent symmetry and the x-ray bang time of the implosion from two orthogonal directions. These measurements were one of the primary diagnostics used to tune the parameters of the laser and Hohlraum to vary the symmetry and x-ray bang time of the implosion of cryogenically cooled ignition scale deuterium/helium filled plastic capsules. Here, we will report on the successful measurements performed with up to 1.2 MJ of laser energy in a fully integrated cryogenics gas-filled ignition-scale Hohlraum and capsule illuminated with 192 smoothed laser beams. We will describe the technique, the accuracy of the technique, and the results of the variation in symmetry with tuning parameters, and explain how that set was used to predictably tune the implosion symmetry as the laser energy, the laser cone wavelength separation, and the Hohlraum size were increased to ignition scales. We will also describe how to apply that technique to cryogenically layered tritium-hydrogen-deuterium capsules.

Kyrala, G. A.; Kline, J. L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Dixit, S.; Glenzer, S.; Kalantar, D.; Bradley, D.; Izumi, N.; Meezan, N.; Landen, O. L.; Callahan, D.; Weber, S. V.; Holder, J. P.; Glenn, S.; Edwards, M. J.; Bell, P.; Kimbrough, J.; Koch, J.; Prasad, R.; Suter, L. [Lawrence Livermore National Laboratory, Livermore, California 94551 (United States); Kilkenny, J. [General Atomics, San Diego, California 92121 (United States)

2010-10-15T23:59:59.000Z

339

Implementation of data acquisition interface using on-board field-programmable gate array (FPGA) universal serial bus (USB) link  

SciTech Connect (OSTI)

Typically a system consists of hardware as the controller and software which is installed in the personal computer (PC). In the effective nuclear detection, the hardware involves the detection setup and the electronics used, with the software consisting of analysis tools and graphical display on PC. A data acquisition interface is necessary to enable the communication between the controller hardware and PC. Nowadays, Universal Serial Bus (USB) has become a standard connection method for computer peripherals and has replaced many varieties of serial and parallel ports. However the implementation of USB is complex. This paper describes the implementation of data acquisition interface between a field-programmable gate array (FPGA) board and a PC by exploiting the USB link of the FPGA board. The USB link is based on an FTDI chip which allows direct access of input and output to the Joint Test Action Group (JTAG) signals from a USB host and a complex programmable logic device (CPLD) with a 24 MHz clock input to the USB link. The implementation and results of using the USB link of FPGA board as the data interfacing are discussed.

Yussup, N.; Ibrahim, M. M.; Lombigit, L.; Rahman, N. A. A.; Zin, M. R. M. [Malaysian Nuclear Agency (Nuclear Malaysia), Bangi, 43000 KAJANG (Malaysia)

2014-02-12T23:59:59.000Z

340

Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities  

DOE Patents [OSTI]

A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. 20 figs.

McEwan, T.E.

1998-06-30T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Impact of titanium addition on film characteristics of HfO{sub 2} gate dielectrics deposited by atomic layer deposition  

SciTech Connect (OSTI)

The impact of 8-to 45-at. % Ti on physical and electrical characteristics of atomic-layer-deposited and annealed hafnium dioxide was studied using vacuum-ultraviolet spectroscopic ellipsometry, secondary ion mass spectroscopy, transmission electron microscopy, atomic force microscopy, x-ray diffraction, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and x-ray reflectometry. The role of Ti addition on the electrical performance is investigated using molybdenum (Mo)-gated capacitors. The film density decreases with increasing Ti addition. Ti addition stabilizes the amorphous phase of HfO{sub 2}, resulting in amorphous films as deposited. After a high-temperature annealing, the films transition from an amorphous to a polycrystalline phase. Orthorhombic Hf-Ti-O peaks are detected in polycrystalline films containing 33-at. % or higher Ti content. As Ti content is decreased, monoclinic HfO{sub 2} becomes the predominant microstructure. No TiSi is formed at the dielectric/Si interface, indicating films with good thermal stability. The band gap of Hf-Ti-O was found to be lower than that of HfO{sub 2}. Well-behaved capacitance-voltage and leakage current density-voltage characteristics were obtained for Hf-Ti-O. However, an increased leakage current density was observed with Ti addition. The data from capacitance-voltage stressing indicate a smaller flatband voltage (V{sub fb}) shift in the HfO{sub 2} films with low Ti content when compared with the HfO{sub 2} films. This indicates less charge trapping with a small amount of Ti addition.

Triyoso, D.H.; Hegde, R.I.; Zollner, S.; Ramon, M.E.; Kalpat, S.; Gregory, R.; Wang, X.-D.; Jiang, J.; Raymond, M.; Rai, R.; Werho, D.; Roan, D.; White, B.E. Jr.; Tobin, P.J. [Freescale Semiconductor, Inc., Advanced Products Research and Development Laboratory, 3501 Ed Bluestein Boulevard, Austin, Texas 78721 (United States)

2005-09-01T23:59:59.000Z

342

Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films  

SciTech Connect (OSTI)

A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800?nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates.

Roy, Sukhdev, E-mail: sukhdevroy@dei.ac.in; Yadav, Chandresh [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)] [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)

2013-12-09T23:59:59.000Z

343

Assessing homeland chemical hazards outside the military gates: industrial hazard threat assessments for department of defense installations  

Science Journals Connector (OSTI)

As part of comprehensive joint medical surveillance measures outlined by the Department of Defense, the US Army Center for Health Promotion and Preventive Medicine (USACHPPM) is beginning to assess environmental health threats to continental US military installations. A common theme in comprehensive joint medical surveillance, in support of Force Health Protection, is the identification and assessment of potential environmental health hazards, and the evaluation and documentation of actual exposures in both a continental US and outside a continental US setting. For the continental US assessments, the USACHPPM has utilized the US Environmental Protection Agency (EPA) database for risk management plans in accordance with Public Law 106-40, and the toxic release inventory database, in a state-of the art geographic information systems based program, termed the Consequence Assessment and Management Tool Set, or CATS, for assessing homeland industrial chemical hazards outside the military gates. As an example, the US EPA toxic release inventory and risk management plans databases are queried to determine the types and locations of industries surrounding a continental US military installation. Contaminants of concern are then ranked with respect to known toxicological and physical hazards, where they are then subject to applicable downwind hazard simulations using applicable meteorological and climatological data sets. The composite downwind hazard areas are mapped in relation to emergency response planning guidelines (ERPG), which were developed by the American Industrial Hygiene Association to assist emergency response personnel planning for catastrophic chemical releases. In addition, other geographic referenced data such as transportation routes, satellite imagery and population data are included in the operational, equipment, and morale risk assessment and management process. These techniques have been developed to assist military medical planners and operations personnel in determining the industrial hazards, vulnerability assessments and health risk assessments to continental United States military installations. These techniques and procedures support the Department of Defense Force Protection measures, which provides awareness of a terrorism threat, appropriate measures to prevent terrorist attacks and mitigate terrorism's effects in the event that preventive measures are ineffective.

Jeffrey S Kirkpatrick; Jacqueline M Howard; David A Reed

2002-01-01T23:59:59.000Z

344

Development of bellows and gate valves with a comb-type rf shield for high-current accelerators: Four-year beam test at KEK B-Factory  

SciTech Connect (OSTI)

Since a comb-type rf shield was proposed in 2003 as a rf shield for future high-intensity accelerators, various types of bellow chambers and gate valves with this rf shield have been installed in the KEK B-Factory rings in series and tested with beams. Through beam tests to check the performance, a structural simplification has been tried in parallel. The temperatures of the bellow corrugations decreased by a factor of 3-6 compared to those with a conventional finger-type rf shield in most cases. The temperatures of the body of the gate valves also decreased by a factor of 2-5. These results demonstrated the availability of the comb-type rf shield. Although a discharge was observed in one simplified model, the latest model has shown no problem up to a stored beam current of 1.8 A (1.3 mA/bunch, 6 mm bunch length). Experiences with the comb-type rf shield in these four-year beam tests are reviewed here.

Suetsugu, Yusuke; Kanazawa, Ken-ichi; Shibata, Kyo; Shirai, Mitsuru; Bondar, Aleksander E.; Kuzminykh, Victor S.; Gorbovsky, Aleksander I.; Sonderegger, Kurt; Morii, Minoru; Kawada, Kakuyu [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Budker Institute of Nuclear Physics (BINP), Novosibirsk 630090 (Russian Federation); VAT Vakuumventile AG, Haag CH-9469 (Switzerland); VAT SKK Vacuum Ltd., Yokohama, Kanagawa 240-0023 (Japan)

2007-04-15T23:59:59.000Z

345

The two-qubit controlled-phase gate based on cross-phase modulation in GaAs/AlGaAs semiconductor quantum wells  

E-Print Network [OSTI]

We present a realization of two-qubit controlled-phase gate, based on the linear and nonlinear properties of the probe and signal optical pulses in an asymmetric GaAs/AlGaAs double quantum wells. It is shown that, in the presence of cross-phase modulation, a giant cross-Kerr nonlinearity and mutually matched group velocities of the probe and signal optical pulses can be achieved while realizing the suppression of linear and self-Kerr optical absorption synchronously. These characteristics serve to exhibit an all-optical two-qubit controlled-phase gate within efficiently controllable photon-photon entanglement by semiconductor mediation. In addition, by using just polarizing beam splitters and half-wave plates, we propose a practical experimental scheme to discriminate the maximally entangled polarization state of two-qubit through distinguishing two out of the four Bell states. This proposal potentially enables the realization of solid states mediated all-optical quantum computation and information processing.

X. Q. Luo; D. L. Wang; H. Fan; W. M. Liu

2012-01-17T23:59:59.000Z

346

Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices  

SciTech Connect (OSTI)

As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metaloxidesemiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ?4.6?eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

Lee, Albert, E-mail: alee@intermolecular.com; Fuchigami, Nobi; Pisharoty, Divya; Hong, Zhendong; Haywood, Ed; Joshi, Amol; Mujumdar, Salil; Bodke, Ashish; Karlsson, Olov [Intermolecular, 3011 North First Street, San Jose, California 95134 (United States); Kim, Hoon; Choi, Kisik [GLOBALFOUNDRIES Technology Research Group, 257 Fuller Road, Albany, New York 12309 (United States); Besser, Paul [GLOBALFOUNDRIES, 1050 East Arques, Sunnyvale, California 94085 (United States)

2014-01-15T23:59:59.000Z

347

AVTA Federal Fleet PEV Readiness Data Logging and Characterization Study for the National Park Service: Golden Gate National Recreation Area  

SciTech Connect (OSTI)

Battelle Energy Alliance, LLC, managing and operating contractor for the U.S. Department of Energy's Idaho National Laboratory, is the lead laboratory for U.S. Department of Energy Advanced Vehicle Testing. Battelle Energy Alliance, LLC contracted with Intertek Testing Services, North America (ITSNA) to collect data on federal fleet operations as part of the Advanced Vehicle Testing Activity's Federal Fleet Vehicle Data Logging and Characterization study. The Advanced Vehicle Testing Activity study seeks to collect data to validate the utilization of advanced electric drive vehicle transportation. This report focuses on the Golden Gate National Recreation Area (GGNRA) fleet to identify daily operational characteristics of select vehicles and report findings on vehicle and mission characterizations to support the successful introduction of plug-in electric vehicles (PEVs) into the agencies' fleets. Individual observations of these selected vehicles provide the basis for recommendations related to electric vehicle adoption and whether a battery electric vehicle or plug-in hybrid electric vehicle (PHEV) (collectively PEVs) can fulfill the mission requirements. GGNRA identified 182 vehicles in its fleet, which are under the management of the U.S. General Services Administration. Fleet vehicle mission categories are defined in Section 4, and while the GGNRA vehicles conduct many different missions, only two (i.e., support and law enforcement missions) were selected by agency management to be part of this fleet evaluation. The selected vehicles included sedans, trucks, and sport-utility vehicles. This report will show that battery electric vehicles and/or PHEVs are capable of performing the required missions and providing an alternative vehicle for support vehicles and PHEVs provide the same for law enforcement, because each has a sufficient range for individual trips and time is available each day for charging to accommodate multiple trips per day. These charging events could occur at the vehicle home base, high-use work areas, or intermediately along routes that the vehicles frequently travel. Replacement of vehicles in the current fleet would result in significant reductions in the emission of greenhouse gases and petroleum use, while also reducing fuel costs. The San Francisco Bay Area is a leader in the adoption of PEVs in the United States. PEV charging stations, or more appropriately identified as electric vehicle supply equipment, located on the GGNRA facility would be a benefit for both GGNRA fleets and general public use. Fleet drivers and park visitors operating privately owned PEVs benefit by using the charging infrastructure. ITSNA recommends location analysis of the GGNRA site to identify the optimal placement of the electric vehicle supply equipment station. ITSNA recognizes the support of Idaho National Laboratory and ICF International for their efforts to initiate communication with the National Parks Service and GGNRA for participation in the study. ITSNA is pleased to provide this report and is encouraged by the high interest and support from the National Park Service and GGNRA personnel.

Stephen Schey; Jim Francfort

2014-03-01T23:59:59.000Z

348

Thickness-modulated optical dielectric constants and band alignments of HfO{sub x}N{sub y} gate dielectrics  

SciTech Connect (OSTI)

Thickness-modulated optical dielectric constants and band alignments of HfO{sub x}N{sub y} films grown by sputtering have been investigated by spectroscopic ellipsometry (SE) and x-ray photoelectron spectroscopy. Based on SE measurements, it has been noted that an increase in optical dielectric constant and band gap has been observed as a function of the film thickness. Analyses of thickness-dependent band alignment of the HfO{sub x}N{sub y}/Si system indicate that the valence band offset increases, but only slight change in the conduction band offset, resulting from the thickness-induced change in the structure. The suitable optical dielectric constants and band offsets relative to Si make sputtering-derived HfO{sub x}N{sub y} film a promising candidate for high-k gate dielectrics.

He, G.; Zhang, L. D.; Liu, M.; Zhang, J. P.; Wang, X. J. [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Zhen, C. M. [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050016 (China)

2009-01-01T23:59:59.000Z

349

On the electrical stress-induced oxide-trapped charges in thin HfO{sub 2}/SiO{sub 2} gate dielectric stack  

SciTech Connect (OSTI)

Oxide charge buildup and its generation kinetics during constant voltage stress in TaN/HfO{sub 2}/SiO{sub 2}/p-Si structures have been experimentally investigated. From the oxide charge relaxation experiments, nature and energy location of the as-fabricated intrinsic hole traps in the gate stack have also been determined. Our measurement results indicate that the dispersive proton transport through the interfacial SiO{sub 2} contributes larger than hole trapping in positive charge buildup in the stack. From the bias temperature stress measurement results in both control oxide and HfO{sub 2}/SiO{sub 2} stacks, we have identified overcoordinated [Si{sub 2}=OH]{sup +} centers as the proton-induced defects located in the interfacial SiO{sub 2} layer of the stack. Finally, an empirical equation is proposed to explain the stress-induced oxide positive charge buildup.

Samanta, Piyas; Zhu Chunxiang; Chan, Mansun [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China); Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 (Singapore); Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China)

2007-09-10T23:59:59.000Z

350

(DOE/EIS-0128-SA-02): Supplement Analysis: Los Banos-Gates (Path 15) Transmission line project changes to alignment, access road stream crossing, and basis for Supplemental EIS Determination  

Broader source: Energy.gov (indexed) [DOE]

Los Banos-Gates (Path 15) Transmission Line Project DOE/EIS-0128-SA02 Western Area Power Administration Sierra Nevada Customer Service Region U.S. Department of Energy Changes to Alignment, Access Road Stream Crossing, and Basis for Supplemental Environmental Impact Statement Determination Background The Los Banos-Gates 500-kilovolt Transmission Line project was originally proposed as part of the California-Oregon Transmission Project in the 1980s. These two projects were the subject of a single set of documents prepared in 1986 (draft) and 1988 (final) that served as the Environmental Impact Statement (EIS) under the National Environmental Policy Act and the Environmental Impact Report (EIR) under the California Environmental Quality Act. The EIS is entitled "Final Environmental Impact

351

Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors  

SciTech Connect (OSTI)

In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO{sub 2}/InP and HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack are presented. F had been introduced into HfO{sub 2} gate dielectric by postgate CF{sub 4} plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO{sub 2} bulk and less interface trap density at the HfO{sub 2}/III-V interface.

Chen Yenting; Zhao Han; Wang Yanzhen; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Texas 78758 (United States)

2010-06-21T23:59:59.000Z

352

InGaZnO thin film transistor with HfO{sub 2} gate insulator prepared using various O{sub 2}/(Ar + O{sub 2}) gas ratios  

SciTech Connect (OSTI)

We have investigated the effect of the deposition of an HfO{sub 2} thin film as a gate insulator with different O{sub 2}/(Ar + O{sub 2}) gas ratios using RF magnetron sputtering. The HfO{sub 2} thin film affected the device performance of amorphous indiumgalliumzinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O{sub 2}/(Ar + O{sub 2}) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm{sup 2}/(V s). Compared to those prepared with an O{sub 2}/(Ar + O{sub 2}) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm{sup 2}/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O{sub 2}/(Ar + O{sub 2}) gas ratio.

Jo, Young Je [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)] [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of); Lee, In-Hwan [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of)] [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of); Kwak, Joon Seop, E-mail: jskwak@sunchon.ac.kr [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)

2012-10-15T23:59:59.000Z

353

Image processing with cellular nonlinear networks implemented on field-programmable gate arrays for real-time applications in nuclear fusion  

SciTech Connect (OSTI)

In the past years cameras have become increasingly common tools in scientific applications. They are now quite systematically used in magnetic confinement fusion, to the point that infrared imaging is starting to be used systematically for real-time machine protection in major devices. However, in order to guarantee that the control system can always react rapidly in case of critical situations, the time required for the processing of the images must be as predictable as possible. The approach described in this paper combines the new computational paradigm of cellular nonlinear networks (CNNs) with field-programmable gate arrays and has been tested in an application for the detection of hot spots on the plasma facing components in JET. The developed system is able to perform real-time hot spot recognition, by processing the image stream captured by JET wide angle infrared camera, with the guarantee that computational time is constant and deterministic. The statistical results obtained from a quite extensive set of examples show that this solution approximates very well an ad hoc serial software algorithm, with no false or missed alarms and an almost perfect overlapping of alarm intervals. The computational time can be reduced to a millisecond time scale for 8 bit 496x560-sized images. Moreover, in our implementation, the computational time, besides being deterministic, is practically independent of the number of iterations performed by the CNN - unlike software CNN implementations.

Palazzo, S.; Vagliasindi, G.; Arena, P. [Dipartimento di Ingegneria Elettrica Elettronica e dei Sistemi, Universita degli Studi di Catania, 95125 Catania (Italy); Murari, A. [Consorzio RFX-Associazione EURATOM ENEA per la Fusione, I-35127 Padova (Italy); Mazon, D. [Association EURATOM-CEA, CEA Cadarache, 13108 Saint-Paul-lez-Durance (France); De Maack, A. [Arts et Metiers Paris Tech Engineering College (ENSAM), 13100 Aix-en-Provence (France); Collaboration: JET-EFDA Contributors

2010-08-15T23:59:59.000Z

354

Experimental investigation of bright spots in broadband, gated x-ray images of ignition-scale implosions on the National Ignition Facility  

SciTech Connect (OSTI)

Bright spots in the hot spot intensity profile of gated x-ray images of ignition-scale implosions at the National Ignition Facility [G. H. Miller et al., Opt. Eng. 443, (2004)] are observed. X-ray images of cryogenically layered deuterium-tritium (DT) and tritium-hydrogen-deuterium (THD) ice capsules, and gas filled plastic shell capsules (Symcap) were recorded along the hohlraum symmetry axis. Heterogeneous mixing of ablator material and fuel into the hot spot (i.e., hot-spot mix) by hydrodynamic instabilities causes the bright spots. Hot-spot mix increases the radiative cooling of the hot spot. Fourier analysis of the x-ray images is used to quantify the evolution of bright spots in both x- and k-space. Bright spot images were azimuthally binned to characterize bright spot location relative to known isolated defects on the capsule surface. A strong correlation is observed between bright spot location and the fill tube for both Symcap and cryogenically layered DT and THD ice targets, indicating the fill tube is a significant seed for the ablation front instability causing hot-spot mix. The fill tube is the predominant seed for Symcaps, while other capsule non-uniformities are dominant seeds for the cryogenically layered DT and THD ice targets. A comparison of the bright spot power observed for Si- and Ge-doped ablator targets shows heterogeneous mix in Symcap targets is mostly material from the doped ablator layer.

Barrios, M. A.; Suter, L. J.; Glenn, S.; Benedetti, L. R.; Bradley, D. K.; Collins, G. W.; Hammel, B. A.; Izumi, N.; Ma, T.; Scott, H.; Smalyuk, V. A. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)] [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Regan, S. P.; Epstein, R. [Laboratory for Laser Energetics, University of Rochester 250 East River Road, Rochester, New York 14623-199 (United States)] [Laboratory for Laser Energetics, University of Rochester 250 East River Road, Rochester, New York 14623-199 (United States); Kyrala, G. A. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2013-07-15T23:59:59.000Z

355

Fish injury and mortality in spillage and turbine passage  

SciTech Connect (OSTI)

Spillage rather than turbine passage has generally been considered the more benign route for fish passing hydroelectric stations. However, recent studies utilizing the HI-Z Turb`N Tag recapture technique indicate that fish survival may be similar for these passage routes. Short-term ({<=}1 h) survival rates determined during 25 passage tests at propeller turbines on a variety of fish species were compared with those from six sluice/spill tests. Turbine passage survival data were partitioned by fish size, individual turbine unit size, and efficient or inefficient mode of turbine operation. The survival rate in all the turbine passage tests ranged from 81 to 100% (median 96%). Survival estimates were generally similar over the entire range of turbine discharges tested and regardless of operational mode for fish {<=}200 mm (93 to 100%; median 96%). However, studies on fish >200 mm where smaller turbines operated inefficiently were more variable. Estimated survival rates of 81 to 86% were obtained for these larger fish. These latter studies occurred at horizontal propeller type turbines where an inefficient wicket gate or turbine blade setting was tested. Survival rates obtained during the sluice/spill tests ranged from 93 to 100%, with a median of 98%. Although fish species or size did not appear an important factor, the physical characteristics of the sluice/spill area apparently did affect survival. Unobstructed spills yielded higher survival rates. Since similar passage survival rates were obtained for turbine passage (96%) compared to spill passage (98%), the strategy of diverting fishes over spillways or through bypasses should be reexamined. This is especially true when bypasses or spills are suggested as mitigation to protect emigrating juvenile anadromous fishes. Whichever strategy is chosen a quantitative evaluation of each route should be undertaken.

Heisey, P.G.; Mathur, D.; Euston, E.T. [RMC Environmental Services, Drumore, PA (United States)

1995-12-31T23:59:59.000Z

356

Thermal response of Ru electrodes in contact with SiO{sub 2} and Hf-based high-k gate dielectrics  

SciTech Connect (OSTI)

A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO{sub 2} and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO{sub 2}, Ru/HfO{sub 2}, and Ru/HfSiO{sub x} film systems were observed through cross-sectional high-resolution transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy with electron-energy-loss spectra, and energy dispersive x-ray spectra analysis. Ru interacted with SiO{sub 2}, but remained stable on HfO{sub 2} at 1000 deg. C. The onset of Ru/SiO{sub 2} interfacial interactions is identified via silicon substrate pitting possibly from Ru diffusion into the dielectric in samples exposed to a 900 deg. C/10-s anneal. The dependence of capacitor device degradation with decreasing SiO{sub 2} thickness suggests Ru diffuses through SiO{sub 2}, followed by an abrupt, rapid, nonuniform interaction of ruthenium silicide as Ru contacts the Si substrate. Local interdiffusion detected on Ru/HfSiO{sub x} samples may be due to phase separation of HfSiO{sub x} into HfO{sub 2} grains within a SiO{sub 2} matrix, suggesting that SiO{sub 2} provides a diffusion pathway for Ru. Detailed evidence consistent with a dual reaction mechanism for the Ru/SiO{sub 2} system at 1000 deg. C is presented.

Wen, H.-C.; Lysaght, P.; Alshareef, H.N.; Huffman, C.; Harris, H.R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.H.; Campin, M. J.; Foran, B.; Lian, G.D.; Kwong, D.-L. [SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741(United States); University of Texas at Austin, Pickle Research Campus-Microelectronics and Engineering Research (PRC-MER) Building 2.606A/R9950, Austin, Texas 78712 (United States); SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States); Advanced Technology Development Facility (ATDF) Inc., 2706 Montopolis Drive, Austin, Texas 78741 (United States); University of Texas at Austin, Pickle Research Campus-Microelectronics and Engineering Research (PRC-MER) Building 2.606A/R9950, Austin, Texas 78712 (United States)

2005-08-15T23:59:59.000Z

357

Anti-addiction drug ibogaine inhibits voltage-gated ionic currents: A study to assess the drug's cardiac ion channel profile  

SciTech Connect (OSTI)

The plant alkaloid ibogaine has promising anti-addictive properties. Albeit not licenced as a therapeutic drug, and despite hints that ibogaine may perturb the heart rhythm, this alkaloid is used to treat drug addicts. We have recently reported that ibogaine inhibits human ERG (hERG) potassium channels at concentrations similar to the drugs affinity for several of its known brain targets. Thereby the drug may disturb the heart's electrophysiology. Here, to assess the drug's cardiac ion channel profile in more detail, we studied the effects of ibogaine and its congener 18-Methoxycoronaridine (18-MC) on various cardiac voltage-gated ion channels. We confirmed that heterologously expressed hERG currents are reduced by ibogaine in low micromolar concentrations. Moreover, at higher concentrations, the drug also reduced human Na{sub v}1.5 sodium and Ca{sub v}1.2 calcium currents. Ion currents were as well reduced by 18-MC, yet with diminished potency. Unexpectedly, although blocking hERG channels, ibogaine did not prolong the action potential (AP) in guinea pig cardiomyocytes at low micromolar concentrations. Higher concentrations (? 10 ?M) even shortened the AP. These findings can be explained by the drug's calcium channel inhibition, which counteracts the AP-prolonging effect generated by hERG blockade. Implementation of ibogaine's inhibitory effects on human ion channels in a computer model of a ventricular cardiomyocyte, on the other hand, suggested that ibogaine does prolong the AP in the human heart. We conclude that therapeutic concentrations of ibogaine have the propensity to prolong the QT interval of the electrocardiogram in humans. In some cases this may lead to cardiac arrhythmias. - Highlights: We study effects of anti-addiction drug ibogaine on ionic currents in cardiomyocytes. We assess the cardiac ion channel profile of ibogaine. Ibogaine inhibits hERG potassium, sodium and calcium channels. Ibogaines effects on ion channels are a potential source of cardiac arrhythmias. 18-Methoxycoronaridine has a lower affinity for cardiac ion channels than ibogaine.

Koenig, Xaver; Kovar, Michael; Rubi, Lena; Mike, Agnes K.; Lukacs, Peter; Gawali, Vaibhavkumar S.; Todt, Hannes [Center for Physiology and Pharmacology, Department of Neurophysiology and -pharmacology, Medical University of Vienna, 1090 Vienna (Austria); Hilber, Karlheinz, E-mail: karlheinz.hilber@meduniwien.ac.at [Center for Physiology and Pharmacology, Department of Neurophysiology and -pharmacology, Medical University of Vienna, 1090 Vienna (Austria); Sandtner, Walter [Center for Physiology and Pharmacology, Institute of Pharmacology, Medical University of Vienna, 1090 Vienna (Austria)

2013-12-01T23:59:59.000Z

358

Novel Nanocrystal Floating Gate Memory  

E-Print Network [OSTI]

and experiment for metal silicide nanocrystal MOSFETmaterials such as metal, silicide and even hetero-structureand experiment for metal silicide nanocrystal MOSFET

Zhou, Huimei

2012-01-01T23:59:59.000Z

359

Novel Nanocrystal Floating Gate Memory  

E-Print Network [OSTI]

nanocrystal-based nonvolatile memory. Reference: [1] H. A.process to make metal/high-k core-shell NC memory may openup opportunities for memory applications. References [1] W.

Zhou, Huimei

2012-01-01T23:59:59.000Z

360

Comparison of gated Tc99m-MIBI SPECT with Tc99m-MIBI/F18-FDG SPECT imaging in the diagnosis of resting ischemia, scarring, and viability  

SciTech Connect (OSTI)

Advances in the diagnosis of myocardial ischemia/viability at rest include gated Tc99m-MIBI SPECT imaging, and F18-FDG SPECT imaging. We wished to compare gated MIBI with nongated MIBI/FDG SPECT imaging in 20 patients(pts) with CAD and LV dysfunction. MIBI and FDG uptake and wall motion (WM) at rest were graded in 16 LV segments (Segs). In Segs with at least some MIBI defects, the role of WM information was assessed for the prediction of ischemia (MIBI/FDG mismatch), scarring (MIBI/FDG match), and viability (moderate-normal FDG uptake). All pts had evidence of scarring in some Segs. 11/20 showed significant ischemia. In 10/20 pts, WM generally matched MIBI uptake, of which 6 had ischemia; Of the other 10/20, WM was worse in 3 pts and better in 7 pts. Of the latter, 4/7 had only minimal ischemia, and 3/7 had significant ischemia. Out of 320 combined Segs, 226 had MIBI defects. 80/226 Segs (35%) had ischemia. If WM was better than MIBI uptake, % ischemia only rose to 29/77 Segs (38%)(p-ns). Of 112 Segs with severe MIBI defects, 33% showed ischemia, 67% scarring, and 24% viability. Segs with WM better than severe MIBI defects showed ischemia in 34% (14/41) Segs and viability in 29%(12/41) Segs(p=ns). Segs with both severe MIBI uptake and WM defects showed scarring in 69%(55/80) Segs (p=ns). We conclude that WM information did no appreciably enhance the prediction of resting ischemia, scarring, or viability from resting MIBI uptake alone compared to MIBI/FDG SPECT imaging.

Machac, J.; Dangas, G.; Henzlova, M.J. [Mount Sinai Medical Center, NY (United States)] [and others

1996-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


361

Estimation of annual energy output from a tidal barrage using two different methods  

Science Journals Connector (OSTI)

In recent years, there have been growing international challenges relating to climate change and global warming, with a conflict developing between the need to create a low-carbon economy and rapid depleting reserves of fossil fuels. In addition to these challenges there continues to be the added complexity of a significant global increase in energy demand. Marine renewable energy from tidal barrages is carbon-free and has the potential to make a significant contribution to energy supplies now and in the future. Therefore, it is appropriate to evaluate the total energy that can be extracted from such barrages. In this study two different methods are proposed to estimate the total annual energy output from a barrage, including a theoretical estimation based on the principle associated with tidal hydrodynamics, and a numerical estimation based on the solutions obtained from a 2D hydrodynamic model. The proposed Severn Barrage in the UK was taken as a case study, and these two methods were applied to estimate the potential annual energy output from the barrage. The predicted results obtained using the two methods indicate that the magnitude of the annual energy output would range from 13 to 16TWh, which is similar to the value of 15.6TWh reported by the Department of Energy and Climate Change, in the UK. Further investigations show that the total annual energy output would increase by about 15% if a higher discharge coefficient were to be adopted for the sluice gates, or if the turbine performance were to be improved. However, the estimated annual energy output could exceed the value of 16TWh if future technological advances in both sluice gate construction and turbine performance are included.

Junqiang Xia; Roger A. Falconer; Binliang Lin; Guangming Tan

2012-01-01T23:59:59.000Z

362

Optimization modelling of the impacts of a Severn Barrage for a two-way generation scheme using a Continental Shelf model  

Science Journals Connector (OSTI)

Abstract The Severn Estuary has the world's second largest tide range and a barrage across the estuary, located just seawards of Cardiff in Wales and Weston in the South West England, has been proposed for over half a century, with the objective of extracting large amounts of tidal energy. A Severn Barrage, as previously proposed by the Severn Tidal Power Group (STPG), would be the largest renewable energy project for tidal power generation in the world, if built as proposed, and would generate approximately 5% of the UK's electricity needs. However, concerns have been raised over the environmental impacts of such a barrage, including potential increase in flood risk, loss of intertidal habitats etc. In addressing the challenges of maximizing the energy output and minimizing the environmental impacts of such a barrage, this research study has focused on using a Continental Shelf model, based on the modified Environmental Fluid Dynamics Code (EFDC) with a barrage operation module (EFDC_B), to investigate both the far and near field hydrodynamic impacts of a barrage for different operating scenarios. Three scenarios have been considered to simulate the Severn Barrage, operating via two-way generation and using different combinations of turbines and sluices. The first scenario consisted of 216 turbines and 166 sluices installed along the barrage; the second consisted of 382 turbines with no sluices; and the third consisted of 764 turbines and no sluices. The specification of the sluice gates and turbines are the same for all scenarios. The model results indicate that the third scenario has the best mitigating effects for the far-field and near-field flood risks caused by a barrage and produces the most similar results of minimum water depth and maximum velocity distributions to those obtained from simulating the natural conditions of the estuary, i.e. the current conditions. The results also show that the flow patterns around the barrage are closest to those for the existing natural conditions with minimal slight changes in the estuary. Thus, the results clearly indicate that the environmental impacts of a Severn Barrage can be minimized if the barrage is operated for two-way generation and under the third scenario. Although it appears that the energy output for the third scenario is less than that obtained for the other two scenarios, if very low head (VLH) turbines are used, then the third scenario could generate more energy as more turbines could be cited along the barrage structure. Therefore, the study shows that a Severn Barrage, operating in two-way generation and with 764 turbines (ideally VLH turbines), would be the best option to meet the needs of maximizing the energy output, but having a minimal impact on environmental changes in the estuary and far-field.

Juntao Zhou; Shunqi Pan; Roger A. Falconer

2014-01-01T23:59:59.000Z

363

Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors  

Science Journals Connector (OSTI)

Abstract Hydrogenated amorphous silicon (a-Si) and microcrystalline silicon (?c-Si) films were grown in atmospheric-pressure (AP) He/H2/SiH4 plasma excited by a 150-MHz very high-frequency (VHF) power at a temperature of 220C. The variations in thickness and crystallinity of the deposited Si films along the gas flow direction were studied as functions of gas residence time in the plasma, VHF power density and H2 flow rate. Furthermore, the electrical characteristics of bottom-gate thin film transistors (TFTs) were investigated to evaluate the film quality. The results revealed that the chemical reactions both in gas phase and on the growing film surface were significantly enhanced in AP-VHF plasma, promoting phase transition from amorphous to microcrystalline in a time of the order of 0.1ms. The performance of the \\{TFTs\\} showed that a-Si layers formed in the upstream portion of the plasma zone had reasonably good electrical property (field-effect mobility of approximately 2cm2/Vs) despite very high deposition rates around 20nm/s. While ?c-Si layers deposited in the downstream portion were very defective, which might come from the insufficient passivation of grain boundaries with a-Si tissues due to a too long gas residence time in the plasma. The precise control of gas residence time by adjusting the length of plasma will be effective for the phase control of Si films with desired quality.

H. Kakiuchi; H. Ohmi; T. Yamada; A. Hirano; T. Tsushima; W. Lin; K. Yasutake

2013-01-01T23:59:59.000Z

364

Suppression of Ge-O And Ge-N Bonding at Ge-HfO(2) And Ge-TiO(2) Interfaces By Deposition Onto Plasma-Nitrided Passivated Ge Substrates: Integration Issues Ge Gate Stacks Into Advanced Devices  

SciTech Connect (OSTI)

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO{sub 2} and TiO{sub 2}, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (-0.8 nm) plasma-nitrided Si suboxide, SiO{sub x}, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{sub 1} edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.

Lee, S.; Long, J.P.; Lucovsky, G.; Whitten, J.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

365

GATE: Energy Efficient Vehicles for Sustainable Mobility  

Broader source: Energy.gov [DOE]

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

366

A laser-programmable gate array  

E-Print Network [OSTI]

. Hitachi has developed a lateral linking technique which it used to incorporate into a 4K static RA%I ~40h The programming structure is a 3 pm wide doped polysilicon run with a. 4 pm long intrinsic (undoped) gap in the middle of the run, The resistance... the previously mentioned Hitachi lateral laser link was designed specifically for use in incorporating redundancy into a mem- ory chip, Since the link is in the pull-up paths of the decoding logic its relatively high programmed resistance does not degrade...

Gullette, James Benjamin

1985-01-01T23:59:59.000Z

367

MUSCATINE, LEONARD, RUTH D. GATES, AND INGRID ...  

Science Journals Connector (OSTI)

location from algae to host in hospite in symbiotic cnidarians. ... leased from the algae and translocated to the .... photographed with a D Plan APO 100 UV oil.

1999-12-20T23:59:59.000Z

368

Philosophy of voltage-gated proton channels  

Science Journals Connector (OSTI)

...concomitant extrusion of charge could incur some cost owing to the necessity of charge compensation...105 Mikulski, R , D West, KH Sippel, BS Avvaru, M Aggarwal, C Tu, R McKenna...histidine residues in proteins by means of nuclear magnetic resonance spectroscopy. Acc...

2014-01-01T23:59:59.000Z

369

Countering Aging Effects through Field Gate Sizing  

E-Print Network [OSTI]

. Using HSPICE and 70nm BPTM process numbers, we simulated the technique on four circuits (a ring oscillator, a fan-out four circuit, an ISCAS c432 and c2670). Over the lifetime of the circuit, our simulations predict a 8.89% and a 13% improvement in power...

Henrichson, Trenton D.

2010-01-14T23:59:59.000Z

370

Dopamine D3 regulation of sensorimotor gating  

E-Print Network [OSTI]

Talledo J. The effects of memantine on prepulse inhibition.antagonist/ DA releaser memantine (Swerdlow et al. , 2009b),

Chang, Wei-li

2011-01-01T23:59:59.000Z

371

WBG Gate Drivers for Power Modules  

Broader source: Energy.gov [DOE]

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

372

Massage and the Gate Control Model  

E-Print Network [OSTI]

111 Figure 2. Flow diagram of participant recruitment and retention 112 Figure 3. Study timeline 113 Figure 4. Piecewise MLM analysis model 114 Figure 5. Group differences in pain unpleasantness and residual pain intensity across...

Karlson, Cynthia Windham

2010-08-31T23:59:59.000Z

373

Engineer Nanocrystal Floating Gate Memory Scaling  

E-Print Network [OSTI]

flash memory [2-9]. Metal silicide NCs, with high density ofsemiconductors [14], metal, metallic silicide and metal-like2, 3], metal [4, 5], metallic silicide [6, 7, 8], core-shell

Ren, Jingjian

2012-01-01T23:59:59.000Z

374

High temperature superconductive flux gate magnetometer  

SciTech Connect (OSTI)

This paper proposes a different type of HTS superconducting magnetometer based on the non-linear magnetic behavior of bulk HTS materials. The device design is based on the generation of second harmonics which arise as a result of non-linear magnetization observed in Type-II superconductors. Even harmonics are generated from the non-linear interaction of an ac excitation signal with an external DC magnetic field which acts as a bias signal.

Gershenson, M. (Naval Coastal Systems Center, Panama City, FL (United States))

1991-03-01T23:59:59.000Z

375

Electrochemical Cell Design With A Hollow Gate  

DOE Patents [OSTI]

An electrochemical cell having a spiral winding around a central core, wherein the central core is provided with longitudinal grooves on its outer surface to facilitate electrolyte filing and accommodate overpressure. The core itself improves dissipation of heat generated along the center of the cell, and the hollow core design allows the cell core to have a larger radius, permitting the "jelly roll" winding to begin at a larger radius and thereby facilitate the initial turns of the winding by decreasing the amount of bending required of the electrode laminate at the beginning of the winding operation. The hollow core also provides mechanical support end-to-end. A pair of washers are used at each end of the cell to sandwich current collection tabs in a manner that improves electrical and thermal conductivity while also providing structural integrity.

Romero, Antonio (Parkton, MD); Oweis, Salah (Ellicott City, MD); Chagnon, Guy (Columbia, MD); Staniewicz, Robert (Hunt Valley, MD); Briscoe, Douglas (Westminster, MD)

2000-02-01T23:59:59.000Z

376

MHK Technologies/Severn Barrage | Open Energy Information  

Open Energy Info (EERE)

Severn Barrage Severn Barrage < MHK Technologies Jump to: navigation, search << Return to the MHK database homepage Severn Barrage.jpg Technology Profile Primary Organization Severn Tidal Power Group STpg Technology Resource Click here Current Technology Type Click here Cross Flow Turbine Technology Readiness Level Click here TRL 4 Proof of Concept Technology Description The Severn Barrage is a proposed tidal power station to be built across the Bristol Channel Severn Estuary Along the length of the Severn Barrage open sluice gates would allow the tide to flow in These gates would then be closed at high tide trapping enormous quantities of water behind the barrage A total of 214 40MW turbines would be built into the barrage through which the trapped water would return at high pressure when the tide turns generating electricity In order to permit shipping to pass through the barrage an enormous set of shipping locks would be constructed The tidal turbines along the barrage would generate the same amount of electricity as three of the latest nuclear power stations 8 6 GW during flow and 2 GW on average This would be sufficient to provide 5 6 of the current electricity usage of England and Wales equivalent to 8 large coal fired power stations

377

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics  

SciTech Connect (OSTI)

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

Chu, L. K. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Merckling, C.; Dekoster, J.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Alian, A.; Heyns, M. [Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Hong, M. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2011-07-25T23:59:59.000Z

378

Gating charge displacement in voltage-gated ion channels involves limited transmembrane movement  

Science Journals Connector (OSTI)

... resonance energy transfer in single cells. Biophys. J. 69, 12721280 (1995)Tosteson, M. T. & ... , M. T. &Tosteson, D. C. The sting. Melittin forms channels in lipid bilayers. Biophys. J ...

Baron Chanda; Osei Kwame Asamoah; Rikard Blunck; Benot Roux; Francisco Bezanilla

2005-08-11T23:59:59.000Z

379

Effects of additive C{sub 4}F{sub 8} during inductively coupled BCl{sub 3}/C{sub 4}F{sub 8}/Ar plasma etching of TaN and HfO{sub 2} for gate stack patterning  

SciTech Connect (OSTI)

In this work, the authors investigated the etching characteristics of TaN and HfO{sub 2} layers for gate stack patterning in BCl{sub 3}/Ar and BCl{sub 3}/C{sub 4}F{sub 8}/Ar inductively coupled plasmas and the effects of C{sub 4}F{sub 8} addition on the etch selectivity of the TaN to the HfO{sub 2} layer. Addition of C{sub 4}F{sub 8} gas to the BCl{sub 3}/Ar chemistry improved the TaN/HfO{sub 2} etch selectivity because adding the C{sub 4}F{sub 8} gas enhances the formation of the CF{sub x}Cl{sub y} passivation layer on HfO{sub 2} surface and decreased the HfO{sub 2} etch rate more rapidly than the TaN etch rate in a disproportionate way. Reduction in the etch time for HfO{sub 2} layer also increases the TaN/HfO{sub 2} etch selectivity because the etch time gets closer to the initiation time for HfO{sub 2} etching.

Ko, J. H.; Kim, D. Y.; Park, M. S.; Lee, N.-E.; Lee, S. S.; Ahn, Jinho; Mok, Hyungsoo [School of Advanced Materials Science and Engineering, and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746 (Korea, Republic of); Division of Advanced Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Konkuk University, 1 Hwayangdong, Gwangjingu, Seoul 143-701 (Korea, Republic of)

2007-07-15T23:59:59.000Z

380

South Gate, Maryland: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Maryland: Energy Resources Maryland: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 39.1289978°, -76.6257995° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.1289978,"lon":-76.6257995,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Gates Mills, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

519°, -81.4034477° 519°, -81.4034477° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.5175519,"lon":-81.4034477,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

382

Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode  

E-Print Network [OSTI]

metallization process ivas required because separate potentials must be apphed to the top and base ol' the defined mesas. A potent&al is apphed to the top of the mesas to inject carriers for tunneling through the douhle barrier heterostructures A. rectifying... was a demetal/degrease cleanup process which re- moved any contamination that may have been nn the wal'er. This process ivas followed by deposition of AuGe/Ni on the ivafer's backside which ivill provide an ohmic contact after annealing. The backside...

Kinard, William Brian

1989-01-01T23:59:59.000Z

383

A Rotary Molecular Motor Gated by Electrical Energy  

Science Journals Connector (OSTI)

DFT calculations predict that the chiral pentiptycene derivative E-1 possesses distinct rotational potential energy surfaces in the neutral vs the radical anionic (E-1) form such that continued electrochemical switching between E-1 and E-1 could lead ...

Chen-Yi Kao; Hsiu-Feng Lu; Ito Chao; Jye-Shane Yang

2014-11-13T23:59:59.000Z

384

Voltage-gated proton channel in a dinoflagellate  

Science Journals Connector (OSTI)

...was recently proposed as a source of biodiesel production (23). Our goal was to identify a dinoflagellate...estuarine aquaculture facility . Harmful Algae 1 : 169 189 . 23 Fuentes-Grunewald...veneficum as a sustainable source of biodiesel production . J Ind Microbiol Biotechnol...

Susan M. E. Smith; Deri Morgan; Boris Musset; Vladimir V. Cherny; Allen R. Place; J. Woodland Hastings; Thomas E. DeCoursey

2011-01-01T23:59:59.000Z

385

Thermosensitive gating effect and selective gas adsorption in...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

coordination nanocage Previous Next List Dan Zhao , Daqiang Yuan , Rajamani Krishna , Jasper M. van Baten and Hong-Cai Zhou, Chem. Commun., 2010,46, 7352-7354 DOI: 10.1039...

386

Kinesin Motor Mechanics: Binding, Stepping, Tracking, Gating, and Limping  

E-Print Network [OSTI]

Department of Biological Sciences and Department of Applied Physics, Stanford University, Stanford state of kinesin motor mechanics. Nearly a generation has passed since the discovery of the motor named acquisition rate was 1 kHz (after anti-alias filtering at the Nyquist frequency, 0.5 kHz), and records were

Block, Steven

387

Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

N fix,N 32 where N fix,N is the rate at which nitrogen is fixed on soy cropland. Jordan and Weller (1996) provide an estimate for this parameter N fix,N 78 kgha with a...

388

GATE Center of Excellence in Lightweight Materials and Manufacturing...  

Broader source: Energy.gov (indexed) [DOE]

8 Materials Innovation Technologies (MIT) Recycled carbon fiber for transportation 9 Jordan Reduction Solutions (JRS) Shredding of scrap for recycled composites 10 Neenah Paper...

389

Direct Injection Compression Ignition Diesel Automotive Technology Education GATE Program  

SciTech Connect (OSTI)

The underlying goal of this prqject was to provide multi-disciplinary engineering training for graduate students in the area of internal combustion engines, specifically in direct injection compression ignition engines. The program was designed to educate highly qualified engineers and scientists that will seek to overcome teclmological barriers preventing the development and production of cost-effective high-efficiency vehicles for the U.S. market. Fu1iher, these highly qualified engineers and scientists will foster an educational process to train a future workforce of automotive engineering professionals who are knowledgeable about and have experience in developing and commercializing critical advanced automotive teclmologies. Eight objectives were defmed to accomplish this goal: 1. Develop an interdisciplinary internal co1nbustion engine curriculum emphasizing direct injected combustion ignited diesel engines. 2. Encourage and promote interdisciplinary interaction of the faculty. 3. Offer a Ph.D. degree in internal combustion engines based upon an interdisciplinary cuniculum. 4. Promote strong interaction with indusuy, develop a sense of responsibility with industry and pursue a self sustaining program. 5. Establish collaborative arrangements and network universities active in internal combustion engine study. 6. Further Enhance a First Class educational facility. 7. Establish 'off-campus' M.S. and Ph.D. engine programs of study at various indusuial sites. 8. Extend and Enhance the Graduate Experience.

Carl L. Anderson

2006-09-25T23:59:59.000Z

390

Measuring ultrashort pulses using frequency-resolved optical gating  

SciTech Connect (OSTI)

The purpose of this program is the development of techniques for the measurement of ultrafast events important in gas-phase combustion chemistry. Specifically, goals of this program include the development of fundamental concepts and spectroscopic techniques that will augment the information currently available with ultrafast laser techniques. Of equal importance is the development of technology for ultrafast spectroscopy. For example, methods for the production and measurement of ultrashort pulses at wavelengths important for these studies is an important goal. Because the specific vibrational motion excited in a molecule depends sensitively on the intensity, I(t), and the phase, {psi}(t), of the ultrashort pulse used to excite the motion, it is critical to measure both of these quantities for an individual pulse. Unfortunately, this has remained an unsolved problem for many years. Fortunately, this year, the authors present a technique that achieves this goal.

Trebino, R. [Sandia National Laboratories, Livermore, CA (United States)

1993-12-01T23:59:59.000Z

391

I(DDQ) testing of field programmable gate arrays  

E-Print Network [OSTI]

been focused on using the traditional stuck-at fault model. However, recently it has been shown that this model is inadequate as bridging faults play a dominant role in CMOS technology. The objective of this research is to develop an IDDQ-based test...

Zhao, Lan

2012-06-07T23:59:59.000Z

392

PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...  

Broader source: Energy.gov (indexed) [DOE]

Methods * ANL donated licenses for Powertrain Systems Analysis Toolkit (PSAT) * Matlab Sponsored software and hardware 100K * Support EcoCAR team * Energy storage focus -...

393

Penn State DOE Graduate Automotive Technology Education (Gate...  

Broader source: Energy.gov (indexed) [DOE]

Methods * ANL donated licenses for Powertrain Systems Analysis Toolkit (PSAT) * Matlab Sponsored softwarehardware 100K * Support EcoCAR team goals * Energy storage focus...

394

The University of Tennessee's GATE Center for Hybrid Systems  

Broader source: Energy.gov [DOE]

2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

395

GATE Center of Excellence in Sustainable Vehicle Systems  

Broader source: Energy.gov [DOE]

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

396

GATE Center for Automotive Fuel Cell Systems at Virginia Tech  

Broader source: Energy.gov [DOE]

Presentation from the U.S. DOE Office of Vehicle Technologies "Mega" Merit Review 2008 on February 25, 2008 in Bethesda, Maryland.

397

GATE Center of Excellence in Lightweight Materials and Manufacturing Technologies  

Broader source: Energy.gov [DOE]

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

398

Pramipexole effects on startle gating in rats and normal men  

E-Print Network [OSTI]

antagonist/DA releaser memantine (Swerdlow et al. 2009),J (2009) The effects of memantine on prepulse inhibition.

Swerdlow, Neal R.; Lelham, Sophia A.; Sutherland Owens, Ashley N.; Chang, Wei-Li; Sassen, Sebastiaan D.; Talledo, Jo A.

2009-01-01T23:59:59.000Z

399

hal00263678, On group theory for quantum gates  

E-Print Network [OSTI]

at the interface of the three pillars: quantum physics, mathematics and computer science. If large-scale quantum of the stabilizer group in terms of maximal normal subgroups [16], sustain the explanation of quantum (de

Paris-Sud XI, Université de

400

Novel Nonvolatile Memories With Engineered Nanocrystal Floating Gate  

E-Print Network [OSTI]

synthesis, such as metals and silicides. Basically, PVD isThe incorporation of metal silicides in MOS devices has abe improved by replacing metal with silicide nanocrystals.

Li, Bei

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

GATE Center of Excellence in Lightweight Materials and Manufacturing Technologies  

Broader source: Energy.gov [DOE]

2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

402

An overview of the gate and panel industry  

E-Print Network [OSTI]

characteristics that under certain circumstances can make its use advantageous. It is the job of the rancher to determine the traits that are most important to their operation. Keep in mind that individuals have varying expectations and goals, as well... different traits that set it apart from the others. The intention of this overview is to evaluate the characteristics of the individual manufacturer's products. The rancher will have to make the final decision as to which product will best serve...

Fisher, C. West

2012-06-07T23:59:59.000Z

403

Electroluminescence in ion gel gated organic polymer semiconductor transistors  

E-Print Network [OSTI]

Harsha (N. Shastri), without whom I wouldnt call myself complete, and am filled with gratitude to the cause that has brought us together, be it the god or that nature of probability function or the free will. Abstract This thesis reports the light... . The presence of a positive or negative charge causes a local structural relaxation of the polymer chain around the charge due to electron-phonon coupling similar to that of an exciton. This quasi-particle (spin = 1/2) of a charge and a lattice distortion...

Bhat, Shrivalli

2011-07-12T23:59:59.000Z

404

High Temperature, High Voltage Fully Integrated Gate Driver Circuit  

Broader source: Energy.gov (indexed) [DOE]

driver circuit, 5-V on- chip voltage regulator, short-circuit protection, undervoltage lockout, bootstrap capacitor, dead time controller and temperature sensor * 0.8-micron,...

405

Quantum gates, sensors, and systems with trapped ions  

E-Print Network [OSTI]

Quantum information science promises a host of new and useful applications in communication, simulation, and computational algorithms. Trapped atomic ions are one of the leading physical systems with potential to implement ...

Wang, Shannon Xuanyue

2012-01-01T23:59:59.000Z

406

Choosing a gate dielectric for graphene based transistors  

E-Print Network [OSTI]

Much attention has recently been focused on graphene as an alternative semiconductor to silicon. Transistors with graphene conduction channels have only recently been fabricated and their performance remains to be optimized. ...

Hsu, Pei-Lan, M. Eng. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

407

August16th,2007 MaryGatesHallCommons  

E-Print Network [OSTI]

undergraduate researchers: "[An] important thing I learned is that what you put into a project deter- mines what cancer susceptibility can be attributed to inherited germ line mutations in BRCA1. The BRCA1 gene product will give insight into the structural interaction that makes the ubiquitin ligase complex active

Van Volkenburgh, Elizabeth

408

thebulletin27 November 2011 -Issue 108 Gates Foundation funding  

E-Print Network [OSTI]

matter that collectively make it very good for the microbial fuel cells. "When we first started using in the cost of creating MFCs is likely to continue. This means it is now becoming feasible to create stacks to scale up the MFCs into a `stack' so that they can produce a meaningful level of power. The stacks

Aickelin, Uwe

409

High Temperature, High Voltage Fully Integrated Gate Driver Circuit  

Broader source: Energy.gov [DOE]

2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

410

High Temperature, High Voltage Fully Integrated Gate Driver Circuit  

Broader source: Energy.gov [DOE]

2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

411

GATE Center of Excellence in Lightweight Materials and Manufacturing...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams 43 Lightweighting Vehicles * Lightweight Materials - Composites Technology Magazine *...

412

GATE Center of Excellence at UAB in Lightweight Materials for...  

Broader source: Energy.gov (indexed) [DOE]

* Automotive Castings Lightweight materials for energy absorbing guard rails and bridge repairretrofit Crash & injury studies, Studies for protection using lightweight advanced...

413

GATE Center of Excellence at UAB in Lightweight Materials for...  

Broader source: Energy.gov (indexed) [DOE]

for vehicles * Automotive Castings Miles College - Minority institution partner - Pipeline to UAB programs & graduate school UAB UAB Civil & UAB Biomedical Materials...

414

2006-2011 GATE program at the Ohio State University  

Broader source: Energy.gov [DOE]

2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

415

Women @ Energy: Dianne Gates-Anderson | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

students to consider technical careers. 1) What inspired you to work in STEM? I loved chemistry from my very first chemistry course in the tenth grade. Of the sciences, I found...

416

Compressed Gated Range Sensing Grigorios Tsagkatakisa, Arnaud Woiselleb, George Tzagkarakisc,  

E-Print Network [OSTI]

emitting diode (LED), and an imaging sensor in order to generate a 2D depth map of a scene. Time. INTRODUCTION Active Range Imaging systems employ an active illumination source, typically a laser or a light

Tsakalides, Panagiotis

417

A comprehensive test method for reprogammable field programmable gate arrays  

E-Print Network [OSTI]

the interconnection resources is shown to be 35 for all sizes of Altera FLEX8000 FPGAs. The number of reprogramming steps to test the logic resources is 6 for all sizes of Altera FLEX8000 FPGAs. This yields a total of 41 programming steps. In the largest FLEX8000 FPGA...

Ashen, David Glen

2012-06-07T23:59:59.000Z

418

Time-gating improves the spatial resolution of STED microscopy  

E-Print Network [OSTI]

, Butenandtstr 11, 81377 München, Germany 2 Currently with Center for Systems Biology, Harvard University find that the best resolution for a given pulse power is achieved with a pulse of infinitesimally short duration; however, the maximum resolution can be restored for pulses of finite duration by time

Ulm, Universität

419

THE GROWTH MECHANISMS OF ULTRATHIN GATE DIELECTRICS ON SILICON  

E-Print Network [OSTI]

in the passive oxidation regime, while etching in the active oxidation regime made the surface slightly rougher. A roughening regime is also observed in between the active and passive oxidation regimes and causes, I was fortunate to share a house with Alex See, from whom Qing-Tang heard about me and recruited me

Gustafsson, Torgny

420

Slowing the Flow at Pickering PROGRAMME DELIVERY GROUP MEETING  

E-Print Network [OSTI]

Trotter, Mike Potter, Gordon Clitheroe, Howard Keal, Linda Cowling, Nick Odoni, Stuart Lane, Mick Hoban proposal as it stands proves its worth. (general discussion follows over weirs and sluices, merits

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

HOSPITAL LAUNDRY STANDARDS AND ENERGY CONSERVATION: A PROGRAM PLAN  

E-Print Network [OSTI]

Fighting cross infection in hospital linen. Service Bulletina marker organism in a hospital ward. Br. Med. J. ii: 282-E.R. (1959). Sluicing of hospital linen in automatic washing

Battles, Donald R.

2014-01-01T23:59:59.000Z

422

Safety equipment list for 241-C-106 waste retrieval, Project W-320: Revision 1  

SciTech Connect (OSTI)

The goals of the C-106 sluicing operation are: (1) to stabilize the tank by reducing the heat load in the tank to less than 42 MJ/hr (40,000 Btu/hour), and (2) to initiate demonstration of single-shell tank (SST) retrieval technology. The purpose of this supporting document (SD) is as follows: (1) to provide safety classifications for items (systems, structures, equipment, components, or parts) for the waste retrieval sluicing system (WRSS), and (2) to document and methodology used to develop safety classifications. Appropriate references are made with regard to use of existing systems, structures, equipments, components, and parts for C-106 single-shell transfer tank located in the C Tank Farm, and 241-AY-102 (AY-102) double shell receiver tanks (DST) located in the Aging Waste Facility (AWF). The Waste Retrieval Sluicing System consists of two transfer lines that would connect the two tanks, one to carry the sluiced waste slurry to AY-102, and the other to return the supernatant liquid to C-106. The supernatant, or alternate fluid, will be used to mobilize waste in C-106 for the sluicing process. The equipment necessary for the WRSS include pumps in each tank, sluicers to direct the supernatant stream in C-106, a slurry distributor in AY-102, HVAC for C-106, instrumentation and control devices, and other existing components as required.

Conner, J.C.

1994-11-15T23:59:59.000Z

423

Hanford Site Tank 241-C-108 Residual Waste Contaminant Release Models and Supporting Data  

SciTech Connect (OSTI)

This report presents the results of laboratory characterization, testing, and analysis for a composite sample (designated 20578) of residual waste collected from single-shell tank C-108 during the waste retrieval process after modified sluicing. These studies were completed to characterize concentration and form of contaminant of interest in the residual waste; assess the leachability of contaminants from the solids; and develop release models for contaminants of interest. Because modified sluicing did not achieve 99% removal of the waste, it is expected that additional retrieval processing will take place. As a result, the sample analyzed here is not expected to represent final retrieval sample.

Cantrell, Kirk J.; Krupka, Kenneth M.; Geiszler, Keith N.; Arey, Bruce W.; Schaef, Herbert T.

2010-06-18T23:59:59.000Z

424

Cold test plan for the Old Hydrofracture Facility tank contents removal project, Oak Ridge National Laboratory, Oak Ridge, Tennessee  

SciTech Connect (OSTI)

This Old Hydrofracture Facility (OHF) Tanks Contents Removal Project Cold Test Plan describes the activities to be conducted during the cold test of the OHF sluicing and pumping system at the Tank Technology Cold Test Facility (TTCTF). The TTCTF is located at the Robotics and Process Systems Complex at the Oak Ridge National Laboratory (ORNL). The cold test will demonstrate performance of the pumping and sluicing system, fine-tune operating instructions, and train the personnel in the actual work to be performed. After completion of the cold test a Technical Memorandum will be prepared documenting completion of the cold test, and the equipment will be relocated to the OHF site.

NONE

1997-11-01T23:59:59.000Z

425

Refinements to the EFDC model for predicting the hydro-environmental impacts of a barrage across the Severn Estuary  

Science Journals Connector (OSTI)

Abstract This paper presents an investigation of the impacts of a Severn Barrage on the hydro-environment of the Bristol Channel and Severn Estuary using the Environmental Fluid Dynamics Code (EFDC) model with a recently developed Barrage module (EFDC_B). Details are given of a barrage module being implemented into the EFDC model to represent the various hydraulic structures, such as turbines and sluice gates, as deployed along the barrage line. Several cases, both with and without the barrage, have been simulated to investigate the potential changes on the peak water levels, minimum water depths and peak tidal currents arising from a barrage. The impacts of a barrage on the salinity concentration distribution have also been simulated in both 2D and 3D modes. The predicted results showed that the maximum water levels could be significantly reduced, especially downstream of the barrage and for much of the region in the Severn Estuary and that the minimum water depths would be changed so much that there would be 80.5km2 loss of intertidal habitats due to the sitting of a barrage across the estuary. Likewise, the peak tidal currents would be considerably reduced, and by as much as a half in the middle of the main channel. The predicted salinity concentrations results indicated that at high water, the salinity concentrations would be reduced by 12ppt downstream and upstream of the barrage and salinity concentrations in the region near Beachley would be reduced by up to 5ppt, and that at low water, salinity concentrations would be reduced by 0.51ppt in the middle of the Bristol Channel and by typically 0.5ppt and 1ppt downstream and upstream of the barrage, respectively. The predicted results also indicated that salinity concentrations downstream and upstream of the barrage would be under a stable state with slight oscillations all the time due to the effects of the barrage. A comparison between the salinity concentration distributions predicted by the 2D and 3D models indicated that the two models produced similar salinity distributions, especially in the Severn Estuary and in the region between the middle of the Bristol Channel and the seaward open boundary.

Juntao Zhou; Roger A. Falconer; Binliang Lin

2014-01-01T23:59:59.000Z

426

One-Dimensional Time-Dependent Modeling of GATE Cumulonimbus Convection  

Science Journals Connector (OSTI)

A one-dimensional time-dependent cumulonimbus model is designed that, unlike in previous one-dimensional models, simulates cloud-top heights, vertical velocities, and water contents that are reasonably consistent with those observed in real ...

Brad Schoenberg Ferrier; Robert A. Houze Jr.

1989-02-01T23:59:59.000Z

427

Validation of GATE 6.1 for targeted radiotherapy of metastic melanoma I-labeled benzamide  

E-Print Network [OSTI]

this radiopharmaceutical on human, we performed a dosimetric study in mice using the MIRD methodology [Loevinger et al 1991

Paris-Sud XI, Université de

428

Gated Si nanowires for large thermoelectric power factors Neophytos Neophytou1  

E-Print Network [OSTI]

thermal conductivities as low as =1-2 W/mK (compared to bulk=142 W/mK), which resulted in room temperature;2 Nanostructured and low-dimensional silicon based thermoelectric (TE) materials have attracted significant conductivity, S is the Seebeck coefficient, and is the thermal conductivity. Traditional thermoelectric

429

High fidelity quantum gates with ions in cryogenic microfabricated ion traps  

E-Print Network [OSTI]

While quantum information processing offers a tantalizing possibility of a significant speedup in execution of certain algorithms, as well as enabling previously unmanageable simulations of large quantum systems, it remains ...

Labaziewicz, Jaros?aw

2008-01-01T23:59:59.000Z

430

The civic forum in ancient Israel : the form, function, and symbolism of city gates  

E-Print Network [OSTI]

Building with Earth: Design and Technology of a SustainableBuilding with Earth: Design and Technology of a Sustainable

Frese, Daniel Allan

2012-01-01T23:59:59.000Z

431

Specific binding sites for alcohols and anesthetics on ligand-gated ion channels  

Science Journals Connector (OSTI)

...applications of these compounds. Propanethiol, isoflurane (Ohmeda, Liberty Corner, NJ) or enflurane (Apothecon, Princeton, NJ) were dissolved in...Anesthesia Research Foundation for supporting our collaborative project; V. Bleck and A. Gaudet for technical assistance; and Drs...

Maria Paola Mascia; James R. Trudell; R. Adron Harris

2000-01-01T23:59:59.000Z

432

Laser microfabrication technology and its application to high speed interconnect of gate arrays  

SciTech Connect (OSTI)

A goal of the LLNL Laser Pantography (LP) program has been demonstrating processes in which a computer-steered and computer-modulated laser beam directly deposits or removes material onto or from a substrate such as a silicon wafer. Substantial advantages could accrue from a fully developed set of such processes, including: lower cost for prototyping and low volume manufacturing, faster fabrication, on-line repair, and customized computers. 7 refs., 10 figs.

Bernhardt, A.F.; McWilliams, B.M.; Mitlitsky, F.; Whitehead, J.C.

1986-12-01T23:59:59.000Z

433

Fig. 1. Schematic of gating operation driven by centrifugal force. (a) shows top view of the  

E-Print Network [OSTI]

MICROFLUIDICS Jun Zeng, Deb Banerjee, Manish Deshpande and John R. Gilbert Microcosm Technologies, 215 First., Medford, MA Abstract This paper presents current research in analysis of passive microfluidic capillary of precise control on sample location in microfluidic device. Detailed numerical analyses of the valve

Banerjee, Debjyoti

434

Intrinsic Activity in the Fly Brain Gates Visual Information during Behavioral Choices  

E-Print Network [OSTI]

/output system that executes reflex-like behaviors. It can also initiate neural activity and behaviors in a flight simulator system, we identify intrinsic activity that is associated with the act of selecting (yaw torque) were measured by a torque meter. We show that when facing competing motion stimuli on its

Juusola, Mikko

435

GATE-LEVEL SIMULATION OF QUANTUM CIRCUITS GEORGE F. VIAMONTES, MANOJ RAJAGOPALAN,  

E-Print Network [OSTI]

, and even sparse matrix storage offers little improvement for quantum operators with no zero matrix elements on compressed arguments are immense. Our approach uses graph-based techniques to improve asymptotic time gains in many important cases. Other advanced simulation techniques, e.g., MATLAB's "packed" representa

Markov, Igor

436

Photochemical gating of heterologous ion channels: Remote control over genetically designated populations of neurons  

Science Journals Connector (OSTI)

...Bruker DMX 500 MHz spectrometer...1 H NMR (500 MHz, CDCl 3...CH 3) 2 ]. Atmospheric pressure chemical...same side of the plasma membrane...19, 20) and a large extracellular...decorated the neuronal plasma membrane in its entirety...neuronal surface areas and channel densities...

Boris V. Zemelman; Nasri Nesnas; Georgia A. Lee; Gero Miesenbck

2003-01-01T23:59:59.000Z

437

University of Toronto | Faculty of Applied Science & Engineering | Research Awards The Bill & Melinda Gates Foundation  

E-Print Network [OSTI]

of Canada: Carbon Management Canada David Sinton (MIE) Co-investigator: Amy Bazylak (MIE) A pore scale

438

Range-gated field disturbance sensor with range-sensitivity compensation  

DOE Patents [OSTI]

A field disturbance sensor operates with relatively low power, provides an adjustable operating range, is not hypersensitive at close range, allows co-location of multiple sensors, and is inexpensive to manufacture. The sensor includes a transmitter that transmits a sequence of transmitted bursts of electromagnetic energy. The transmitter frequency is modulated at an intermediate frequency. The sequence of bursts has a burst repetition rate, and each burst has a burst width and comprises a number of cycles at a transmitter frequency. The sensor includes a receiver which receives electromagnetic energy at the transmitter frequency, and includes a mixer which mixes a transmitted burst with reflections of the same transmitted burst to produce an intermediate frequency signal. Circuitry, responsive to the intermediate frequency signal indicates disturbances in the sensor field. Because the mixer mixes the transmitted burst with reflections of the transmitted burst, the burst width defines the sensor range. The burst repetition rate is randomly or pseudorandomly modulated so that bursts in the sequence of bursts have a phase which varies. 8 figs.

McEwan, T.E.

1996-05-28T23:59:59.000Z

439

K&L GATES LLP 1601 K STREET, N.W.  

Broader source: Energy.gov (indexed) [DOE]

percent. 12 U.S. ENERGY INFORMATION ADMINISTRATION, REVIEW OF EMERGING RESOURCES: U.S. SHALE GAS AND SHALE OIL PLAYS (2011), available at http:www.eia.govanalysisstudies...

440

K&L GATES LLP 1601 K STREET, N.W.  

Broader source: Energy.gov (indexed) [DOE]

11 U.S. ENERGY INFORMATION ADMINISTRATION, REVIEW OF EMERGING RESOURCES: U.S. SHALE GAS AND SHALE OIL PLAYS (2011), available at http:www.eia.govanalysisstudies...

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

K&L GATES LLP 1601 K STREET, N.W.  

Broader source: Energy.gov (indexed) [DOE]

July 17, 2014). 10 U.S. ENERGY INFO. ADMIN., Review of Emerging Resources: U.S. Shale Gas and Shale Oil Plays (2011). 8 DC-9824999 v1 No person shall export any natural gas...

442

Expanding GREENSCOPE beyond the gate: a green chemistry and life cycle perspective  

Science Journals Connector (OSTI)

Industrial processes, particularly those within the chemical industry, contribute products and services to improve and increase societys quality of life. However, the transformation of raw materials into their r...

Gerardo J. Ruiz-Mercado; Michael A. Gonzalez

2014-04-01T23:59:59.000Z

443

Theory of gated hemicarcerands and Diels-Alder reactions of tetrazines  

E-Print Network [OSTI]

dimethyltetrazine 4 (green: distortion energy of dienophile,dienophiles 8-11 (green: distortion energy of dienophile,trans-2-butene 9 (green: distortion energy of dienophile,

LIU, FANG

2014-01-01T23:59:59.000Z

444

All-optical logic gates based on vertical cavity semiconductor optical amplifiers  

E-Print Network [OSTI]

A. Mirzaee, Z. Ghaderi, F. Farman, All- optical setresetMirzaee, Z. Ghaderi , and F. Farman, All-optical setreset

Gauss, Veronica Andrea

2009-01-01T23:59:59.000Z

445

Voltage-gated potassium channel KCNV2 (Kv8.2) contributes to epilepsy susceptibility  

Science Journals Connector (OSTI)

...pnas.1017539108 Benjamin S. Jorge Courtney M. Campbell Alison R. Miller Elizabeth D. Rutter Christina A. Gurnett Carlos...2002 ) Relative expression software tool (REST) for group-wise comparison and statistical analysis of relative expression results...

Benjamin S. Jorge; Courtney M. Campbell; Alison R. Miller; Elizabeth D. Rutter; Christina A. Gurnett; Carlos G. Vanoye; Alfred L. George; Jr.; Jennifer A. Kearney

2011-01-01T23:59:59.000Z

446

Photochemical gating of heterologous ion channels: Remote control over genetically designated  

E-Print Network [OSTI]

inputs to neural circuits, stimulate secretion, or regulate force and motility. In an initial between receptor and agonist, peaked at firing frequencies of 40 Hz, initiated and terminated rapidly, and did not attenuate. Precise dose­response relationships allowed current amplitudes and firing

Nesnas, Nasri

447

STANDARD OPERATING PROCEDURE FOR TUBE "A1-GateOx" furnace in TRL.  

E-Print Network [OSTI]

the generation of water vapors by Pyrogenic reaction. The gas control is provided by the Argus 581 Gas ControlOx" is an Atmospheric furnace designed to grow thermal SiO2 in the temperature range of 800- 1050C, on Silicon wafers up

Reif, Rafael

448

E-Print Network 3.0 - acid gate dielectric Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

circuitryand the growthof n... distinct halves of the chip, one large dielectric growth window was wet etched after circuit fabrication... and fabrication of LED's grown in...

449

Inside the Castle Gates: How Foreign Corporations Nagivate Japan's Policymaking Processes  

E-Print Network [OSTI]

Abraham, John. "The Pharmaceutical Industry as a PoliticalNeimeth, Robert. "Japan's Pharmaceutical Industry: PostwarUnderstanding the Pharmaceutical Industry]. Tokyo, Japan:

Kushida, Kenji Erik

2010-01-01T23:59:59.000Z

450

All-optical logic gates based on vertical cavity semiconductor optical amplifiers  

E-Print Network [OSTI]

in International Technology Roadmap for Semiconductors 2007in International Technology Roadmap for Semiconductors 2007The 2007 International Technology Roadmap for Semiconductors

Gauss, Veronica Andrea

2009-01-01T23:59:59.000Z

451

US DOE Sponsored Graduate Automotive Technology Education (GATE) Program at Penn State Emphasizing  

E-Print Network [OSTI]

- power in-vehicle energy storage for hybrid electric and fuel cell vehicles covering the fundamental High-Power In-Vehicle Energy Storage Mission: Provide graduate engineering curriculum focused on high into energy storage curriculum including vehicle topologies, advanced combustion, fuel cells, power

Lee, Dongwon

452

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications  

Broader source: Energy.gov [DOE]

2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

453

Hydrophobically stabilized open state for the lateral gate of the Sec translocon  

Science Journals Connector (OSTI)

...H(x, p;) = Hsolv(x, p) + (1)Hvac(x, p), [5] and where the angle brackets...the side-chain are given by Hsolv and Hvac, respectively. We employed the...profile. The error bars correspond to the standard deviation of the mean free energy profile...

Bin Zhang; Thomas F. Miller III

2010-01-01T23:59:59.000Z

454

Neutron production using a pyroelectric driven target coupled with a gated field ionization source  

SciTech Connect (OSTI)

A palm sized, portable neutron source would be useful for widespread implementation of detection systems for shielded, special nuclear material. We present progress towards the development of the components for an ultracompact neutron generator using a pulsed, meso-scale field ionization source, a deuterated (or tritiated) titanium target driven by a negative high voltage lithium tantalate crystal. Neutron production from integrated tests using an ion source with a single, biased tungsten tip and a 3 Multiplication-Sign 1 cm, vacuum insulated crystal with a plastic deuterated target are presented. Component testing of the ion source with a single tip produces up to 3 nA of current. Dielectric insulation of the lithium tantalate crystals appears to reduce flashover, which should improve the robustness. The field emission losses from a 3 cm diameter crystal with a plastic target and 6 cm diameter crystal with a metal target are compared.

Ellsworth, J. L.; Tang, V.; Falabella, S. [Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, CA 94550 (United States); Naranjo, B.; Putterman, S. [University of California Los Angeles, 405 Hilgard Ave., Los Angeles, CA 90095 (United States)

2013-04-19T23:59:59.000Z

455

E-Print Network 3.0 - abnormal sensorimotor gating Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Collection: Biology and Medicine 86 Max et al.: Internal Models and Feedback Bias in Stuttering 105CONTEMPORARY ISSUES IN COMMUNICATION SCIENCE AND DISORDERS Volume 31 105122...

456

Gate-controlled mid-infrared light bending with aperiodic graphene nanoribbons array  

E-Print Network [OSTI]

Graphene plasmonic nanostructures enable subwavelength confinement of electromagnetic energy from the mid-infrared down to the terahertz frequencies. By exploiting the spectrally varying light scattering phase at vicinity of the resonant frequency of the plasmonic nanostructure, it is possible to control the angle of reflection of an incoming light beam. We demonstrate, through full-wave electromagnetic simulations based on Maxwell equations, the electrical control of the angle of reflection of a mid-infrared light beam by using an aperiodic array of graphene nanoribbons, whose widths are engineered to produce a spatially varying reflection phase profile that allows for the construction of a far-field collimated beam towards a predefined direction.

Carrasco, Eduardo; Mosig, Juan R; Low, Tony; Perruisseau-Carrier, Julien

2014-01-01T23:59:59.000Z

457

M-Channel Gating and Simulation A. A. Selyanko and D. A. Brown  

E-Print Network [OSTI]

.5 KCl; 2 CaCl2; 0.5 MgCl2; 5 HEPES; 10 glucose (pH 7.4 with Tris base). Nominally Ca2 -free external EGTA; 1 CaCl2 (pH 7.4 with KOH) (Selyanko et al., 1992). M-currents were activated by stepping from 50

Brown, David

458

Characterization of a DNA exit gate in the human cohesin ring  

Science Journals Connector (OSTI)

...Mol. Syst. Biol. 7 , 539 ( 2011 ). 10.1038/msb.2011.75 21988835 36 Chou K. C. Lin W. Z. Xiao X. , Wenxiang: A web-server for drawing wenxiang diagrams . Nat. Sci. 3 , 862 865 ( 2011 ). 10.4236/ns.2011.310111 37 Soding J...

Pim J. Huis in t Veld; Franz Herzog; Rene Ladurner; Iain F. Davidson; Sabina Piric; Emanuel Kreidl; Venugopal Bhaskara; Ruedi Aebersold; Jan-Michael Peters

2014-11-21T23:59:59.000Z

459

E-Print Network 3.0 - applicationsa cradle-to-gate life Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

cumulative energy... Previous work has also been done in Life Cycle Assessment (LCA) of OSB Source: ... Source: Gray, Matthew - Department of Forestry, Wildlife, and...

460

Experimental Studies of RF Interference and Upset in Devices and Gates  

E-Print Network [OSTI]

Xingzhi Wen #12;Goals · Start with the study of the effects on the fundamental units of IC circuits, ie and protecting elements. · Develop on-chip sensing, registration, and protection circuitry. #12;Effects. · Effective protection and RF hardened design will be developed #12;RFI Effect on Diode I-V Characteristics

Anlage, Steven

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

The civic forum in ancient Israel : the form, function, and symbolism of city gates  

E-Print Network [OSTI]

of a small strip of lime plaster flooring found inside the 4the other half had a lime plaster finish (Ussishkin, Areaa few patches of lime plaster were found on top of the

Frese, Daniel Allan

2012-01-01T23:59:59.000Z

462

Molecular gating dynamics of the cytoplasmic domains of inwardly rectifying potassium (Kir) channels  

E-Print Network [OSTI]

Neurosci 20, 156-162. Plaster, N. M. , Tawil, R. , Tristani-channels. Neuron 37, 953-962. Plaster, N. M. , Tawil, R. ,H. , Fidzianska, A. , Plaster, N. , et al. (2002).

Pegan, Scott Dusan

2006-01-01T23:59:59.000Z

463

Failure analysis for the dual input quad NAND gate CD4011 under dormant storage conditions.  

SciTech Connect (OSTI)

Several groups of plastic molded CD4011s were electrically tested as part of an Army dormant storage program. These parts had been in storage in missile containers for 4.5 years, and were electrically tested annually. Eight of the parts (out of 1200) failed the electrical tests and were subsequently analyzed to determine the cause of the failures. The root cause was found to be corrosion of the unpassivated Al bondpads. No significant attack of the passivated Al traces was found. Seven of the eight failures occurred in parts stored on a pre-position ship (the Jeb Stuart), suggesting a link between the external environment and observed corrosion.

Sorensen, Neil Robert

2007-05-01T23:59:59.000Z

464

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence  

Broader source: Energy.gov [DOE]

Presentation from the U.S. DOE Office of Vehicle Technologies "Mega" Merit Review 2008 on February 25, 2008 in Bethesda, Maryland.

465

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence  

Broader source: Energy.gov [DOE]

2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

466

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence  

Broader source: Energy.gov [DOE]

2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

467

Na K -pump ligands modulate gating of palytoxin-induced ion channels  

E-Print Network [OSTI]

proteins that mediate transport of ions across cell membranes, they traditionally have been viewed as very to the extracellular surface. The 3Na 2K -exchange transport cycle is completed when two extracellular K ions bind ensure the vectorial nature of net transport. The occluded-ion conformations, with binding sites

Gadsby, David

468

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect (OSTI)

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

469

Halogen-Based Plasma Etching of Novel Field-Effect Transistor Gate Materials  

E-Print Network [OSTI]

of Silicon Etching by a Cf4 Plasma. Journal of Vacuumplasma with the addition of CF4, Cl-2, and N-2. Japaneseet al. , The effect of CF4 addition on Ru etching with

Kiehlbaugh, Kasi Michelle

2009-01-01T23:59:59.000Z

470

Penn State DOE GATE Center of Exellence for In-Vehicle, High...  

Broader source: Energy.gov (indexed) [DOE]

Vehicles * ANL donated licenses for Powertrain Systems Analysis Toolkit (PSAT) * Matlab Sponsored software and hardware * Supporting EcoCAR proposal * Energy storage focus -...

471

Final Technical Report- Back-gate Field Emission-based Cathode RF Electron Gun  

SciTech Connect (OSTI)

The objective was to complete the design of an electron gun which utilizes a radio frequency (RF) power source to apply a voltage to a field emission (FE) cathode, a so called cold cathode, in order to produce an electron beam. The concept of the RF electron gun was originally conceived at Argonne National Laboratory but never reduced to practice. The research allowed the completion of the design based upon the integration of the FE electron source. Compared to other electron guns, the RF gun is very compact, less than one third the size of other comparable guns, and produces a high energy (to several MeV), high quality, high power electron beam with a long focal length with high repetition rates. The resultant electron gun may be used in welding, materials processing, analytical equipment and waste treatment.

McGuire, Gary; Martin, Allen; Noonan, John

2010-10-30T23:59:59.000Z

472

High-frequency self-aligned graphene transistors with transferred gate stacks  

Science Journals Connector (OSTI)

...2009 ) Radio-frequency electrical...Epitaxial-graphene RF field-effect...2011 ) High-frequency, scaled graphene...of high-frequency measurement...Information (PDF) High-frequency self-aligned...attention for radio-frequency transistor...

Rui Cheng; Jingwei Bai; Lei Liao; Hailong Zhou; Yu Chen; Lixin Liu; Yung-Chen Lin; Shan Jiang; Yu Huang; Xiangfeng Duan

2012-01-01T23:59:59.000Z

473

SST-GATE: A dual mirror telescope for the Cherenkov Telescope Array  

E-Print Network [OSTI]

The Cherenkov Telescope Array (CTA) will be the world's first open observatory for very high energy gamma-rays. Around a hundred telescopes of different sizes will be used to detect the Cherenkov light that results from gamma-ray induced air showers in the atmosphere. Amongst them, a large number of Small Size Telescopes (SST), with a diameter of about 4 m, will assure an unprecedented coverage of the high energy end of the electromagnetic spectrum (above ~1TeV to beyond 100 TeV) and will open up a new window on the non-thermal sky. Several concepts for the SST design are currently being investigated with the aim of combining a large field of view (~9 degrees) with a good resolution of the shower images, as well as minimizing costs. These include a Davies-Cotton configuration with a Geiger-mode avalanche photodiode (GAPD) based camera, as pioneered by FACT, and a novel and as yet untested design based on the Schwarzschild-Couder configuration, which uses a secondary mirror to reduce the plate-scale and to all...

Zech, A; Blake, S; Boisson, C; Costille, C; De-Frondat, F; Dournaux, J -L; Dumas, D; Fasola, G; Greenshaw, T; Hervet, O; Huet, J -M; Laporte, P; Rulten, C; Savoie, D; Sayede, F; Schmoll, J

2013-01-01T23:59:59.000Z

474

Model for Cradle-to-Gate Life Cycle Assessment of Clinker Production  

Science Journals Connector (OSTI)

Surplus oxygen is increased by 1% if the relative heat input from petcoke and alternative fuels exceeds 30%. ... Surplus oxygen is required to achieve complete oxidation for low grade fuels and increases by approximately 1% if the relative heat contribution of petcoke and alternative fuels exceeds 30% (27). ... All results of b) and c) should be compared to this base case (precalciner kiln system; fuel mix (% heat): hard coal (50.0%), petcoke (22.4%), natural gas (0.8%), prepared industrial waste (10.9%), ...

Michael Elias Boesch; Annette Koehler; Stefanie Hellweg

2009-09-03T23:59:59.000Z

475

E-Print Network 3.0 - airport gate assignment Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Energy Storage, Conversion and Utilization 9 When the Model Hits the Runway: The DOZE Algorithm for optimal dispatching of Summary: the problem of assigning es- corts to accompany...

476

E-Print Network 3.0 - aircraft gates Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

9 Airspace Management Decision Tool Validating the Behavior and Structure of Software Design Summary: or to take off). 4. The airport owns two taxiways. An aircraft may...

477

Photochemical gating of heterologous ion channels: Remote control over genetically designated populations of neurons  

Science Journals Connector (OSTI)

...and digitized at 5 kHz without filtering (Digidata...a Bruker DMX 500 MHz spectrometer and...reference. 1 H NMR (500 MHz, CDCl 3...CH(CH 3) 2 ]. Atmospheric pressure chemical...same side of the plasma membrane, allowing...decorated the neuronal plasma membrane in its entirety...

Boris V. Zemelman; Nasri Nesnas; Georgia A. Lee; Gero Miesenbck

2003-01-01T23:59:59.000Z

478

A simple gating technique for high-average-current photo-injectors  

SciTech Connect (OSTI)

This paper describes a simple method that can substantially improve the pulse contrast of photo-cathode-based electron accelerators. A device is designed and tested with a drive laser for proof of principle demonstration. The predicted functionality and performance are verified on an Energy-Recovery-Linac (ERL) electron accelerator. The method also applies to various applications that require manipulation of laser pulse repetition rate and pulse length.

Shukui Zhang, Stephen Benson, Pavel Evtushenko, Frederick Wilson

2011-02-01T23:59:59.000Z

479

Assessing the Effect of Mercury Emissions from Contaminated Soil at Natural Gas Gate Stations  

Science Journals Connector (OSTI)

The effect of mercury emissions from contaminated soil at natural gas distribution stations is presented. The effects were estimated as part of a risk assessment that included inhalation and multimedia exposure pathways. The purpose of the paper ...

A. Roffman; K. Macoskey; R. P. Shervill

1995-03-01T23:59:59.000Z

480

Double-gated isolated vertically aligned carbon nanofiber field emission and field ionization arrays  

E-Print Network [OSTI]

Electron impact ionization (ElI) is used extensively in mass spectrometry for gas-phase analytes. Due to the significant amount of fragmentation generated by ElI, the spectrum is usually very noisy. In addition, the ...

Chen, Liang-Yu, 1979-

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "l-lake sluice gate" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

hal-00263678,version2-2Apr2008 On group theory for quantum gates  

E-Print Network [OSTI]

of the three pillars: quantum physics, mathematics and computer science. If large-scale quantum computers can of the stabilizer group in terms of maximal normal subgroups [16], sustain the explanation of quantum (de

Paris-Sud XI, Université de

482

Fiber-Optic Stethoscope: A Cardiac Monitoring and Gating System for Magnetic Resonance Microscopy  

E-Print Network [OSTI]

during magnetic resonance imaging (MRI) is the distortion of the ECG due to electromagnetic interference

483

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications  

Broader source: Energy.gov [DOE]

2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

484

Chemical-Scale Studies of G Protein-Coupled Receptors and Ligand-Gated Ion Channels  

E-Print Network [OSTI]

. Oliver Shafaat and Fan Liu have orders of magnitude more mathematical competence than I do. I really occasion. Tim Miles knows how to chart his own path and excel at it. I've appreciated his friendship

Winfree, Erik

485

Effective Development with GATE and Reusable Code for Semantically Analysing Heterogeneous Documents  

E-Print Network [OSTI]

ontology, tagging, and wiki-like editing of free text fields). In this project, the Service Crawler (SC annotations to the Conceptual Indexer and Matchmaker (CIM), the seman- tic repository and back end for the web files 441 MB Number of documents 250 000 Output to the CIM Number of RDF-XML files 30 Total size

Maynard, Diana

486

Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film  

SciTech Connect (OSTI)

This paper reports comprehensive structural and chemical analyses for the combinatorial Ta-C-N/HfO{sub 2} system, crucial data for understanding the electrical properties of Ta-C-N/HfO{sub 2}. Combinatorial Ta-C-N 'library' (composition spread) films were deposited by magnetron sputtering. Electron probe wavelength dispersive spectroscopy and x-ray fluorescence-yield near-edge spectroscopy were used to quantitatively determine the composition across these films. Scanning x-ray microdiffractometry determined that a solid solution of Ta(C,N){sub x} forms and extends to compositions (0.3<=Ta<=0.5 and 0.57<=Ta<=0.67) that were previously unknown. The thermal stability of the Ta-C-N/HfO{sub 2} library was studied using high resolution transmission electron microscopy, which shows Ta-C-N/HfO{sub 2}/SiO{sub 2}/Si exhibiting good thermal stability up to 950 deg. C.

Chang, K.-S. [National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899 (United States); Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 (United States); Green, M. L.; Levin, I.; Hattrick-Simpers, J. R.; Jaye, C.; Fischer, D. A. [National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899 (United States); Takeuchi, I. [Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 (United States); De Gendt, S. [IMEC, Kapeldreef 75, B-3001 Leuven, Belgium and Department of Chemistry, KU Leuven, 3000 Leuven (Belgium)

2010-05-10T23:59:59.000Z

487

Monte Carlo Simulations of Microchannel Plate Based, Fast-Gated X-Ray Imagers  

SciTech Connect (OSTI)

This is a chapter in a book titled Applications of Monte Carlo Method in Science and Engineering Edited by: Shaul Mordechai ISBN 978-953-307-691-1, Hard cover, 950 pages Publisher: InTech Publication date: February 2011

Wu., M., Kruschwitz, C.

2011-02-01T23:59:59.000Z

488

Solution-gated graphene transistors for chemical and biological sensing applications  

E-Print Network [OSTI]

Various fabrication processes were developed in order to make graphene-based chemical and biological sensors on different substrates. Single-layer graphene is grown by chemical vapor deposition and then transferred to ...

Mailly, Benjamin

2013-01-01T23:59:59.000Z

489

LearningAboutSustainableEnergyResources GoldenGateParkWindEnergyCenter  

E-Print Network [OSTI]

canlearnabouttheprogressandfutureapplicationsof windenergy. #12;MissionStatement PrimaryMarket K12schoolgroups Tourists Parentsandchildren

Agogino, Alice M.

490

Tracking transmitter-gated P2X cation channel activation in vitro and in vivo  

E-Print Network [OSTI]

channels that show calcium fluxes. We genetically engineered rat P2X receptors to carry calcium sensors, comprising the Cys-loop, glutamate and P2X receptor families1, collectively underlie excitatory fast synaptic

Newman, Eric A.

491

DOI: 10.1002/adma.200601908 Piezoelectric Gated Diode of a Single ZnO Nanowire**  

E-Print Network [OSTI]

Institute of Physics. DOI: 10.1063/1.2193468 Electrical and optoelectronic devices such as field class of organic optoelectronic devices has been demonstrated, i.e., organic light-emitting transistors

Wang, Zhong L.

492

Current limiters based on silicon pillar un-gated FET for field emission application  

E-Print Network [OSTI]

This research investigates the use of vertical silicon ungated field effect transistors (FETs) as current limiters to individuallycontrol emission current in a field emitter and provide a simple solution to three problems ...

Niu, Ying, M. Eng. Massachusetts Institute of Technology

2009-01-01T23:59:59.000Z

493

Gate-Controlled Punch Through Transistor Xiangli Li, Huadian Pan, Bogdan M. Wilamowski  

E-Print Network [OSTI]

of the device are simulated using SILVACO atlas device simulator. This device shows high voltage, high operation is proposed and simulated using SILVACO atlas device simulator. The punch through transistors can be used

Wilamowski, Bogdan Maciej

494

Poster NONOVERLAP SOURCE/DRAIN-TO-GATE NANO-CMOS STRUCTURE FOR LOW LEAKAGE DRAM DESIGN  

E-Print Network [OSTI]

shown in Fig.1 using SILVACO. In this structure, the wide nonoverlap region formed by spacer suppresses

Seunghyun Song; Kangsung Lee; Yoonha Jeong

495

ATP hydrolysis-driven gating in cystic fibrosis transmembrane conductance regulator  

Science Journals Connector (OSTI)

...cystic fibrosis transmembrane conductance regulator Daniella Muallem Paola Vergani * * Author...cystic fibrosis transmembrane conductance regulator (CFTR), alone, is an ion channel...cystic fibrosis transmembrane conductance regulator (CFTR), which resulted in abnormal...

2009-01-01T23:59:59.000Z

496

Retrofit of Tehran City Gate Station C.G.S. No. 2 by Using Turboexpander  

E-Print Network [OSTI]

Methane C 1 89.80 3 Carbon Dioxide CO 2 1.10 4 Ethane C 2 3.70 5 Propane C 3 0.98 6 Iso Butane IC 4 0.22 7 Normal Butane NC 4 0.29 8 Iso pentane IC 5 0.10 9 Normal pentane NC 5 0.07 10 Hexane C 6 0.04 Total 100.00 Tab. 1. Chemical... of Technology Select case study The chemical compounds of gas that is passed through the C.G.S. No. 2 of Tehran are as table: Mole Percent Chemical Compounds No. Chemical FormulaName 3.70N2Nitrogen1 89.80CH4Methane2 1.10CO2 Dioxide Carbon3 3.70C2H...

Seresht, R. T.; Ja, H. K.

2010-01-01T23:59:59.000Z

497

The separate and combined effects of monoamine oxidase inhibition and nicotine on P50 sensory gating  

Science Journals Connector (OSTI)

The cognitive effects of nicotine in humans remain a topic of great interest, due to the continued prevalence of cigarette smoking in society as well as the hypothesis that cognitively impaired populations suc...

Dylan M. Smith; Derek Fisher; Pierre Blier; Vadim Illivitsky

2014-12-01T23:59:59.000Z

498

Theory of gated hemicarcerands and Diels-Alder reactions of tetrazines  

E-Print Network [OSTI]

tags with fluorogenic tetrazine cycloadditions. Angew. Chem.M. ; Fox, J. M. Tetrazine ligation: fast bioconjugationR. ; Hilderbrand, S. A. Tetrazine-based cycloadditions:

LIU, FANG

2014-01-01T23:59:59.000Z

499

E-Print Network 3.0 - acid transceptors gate Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(AMPAR) miniature excitatory postsynaptic currents (mEPSCs) but reduction of N Source: Brand, Paul H. - Department of Physiology and Pharmacology, University of Toledo...

500

CaV1.1: The atypical prototypical voltage-gated Ca2+ channel  

Science Journals Connector (OSTI)

CaV1.1 is the prototype for the other nine known CaV channel isoforms, yet it has functional properties that make it truly atypical of this group. Specifically, CaV1.1 is expressed solely in skeletal muscle where it serves multiple purposes; it is the voltage sensor for excitationcontraction coupling and it is an L-type Ca2+ channel which contributes to a form of activity-dependent Ca2+ entry that has been termed Excitation-coupled Ca2+ entry. The ability of CaV1.1 to serve as voltage-sensor for excitationcontraction coupling appears to be unique among CaV channels, whereas the physiological role of its more conventional function as a Ca2+ channel has been a matter of uncertainty for nearly 50years. In this chapter, we discuss how CaV1.1 supports excitationcontraction coupling, the possible relevance of Ca2+ entry through CaV1.1 and how alterations of CaV1.1 function can have pathophysiological consequences. This article is part of a Special Issue entitled: Calcium channels.

Roger A. Bannister; Kurt G. Beam

2013-01-01T23:59:59.000Z