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Sample records for junction greenfield grundy

  1. Greenfield Wind | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name Greenfield Wind Facility Greenfield Wind Sector Wind energy Facility Type Community Wind Facility Status In Service Owner Greenfield Wind Power...

  2. Grundy Center Mun Light & Power | Open Energy Information

    Open Energy Info (EERE)

    www.gcmuni.nettextcontactus. Facebook: https:www.facebook.compagesCity-of-Grundy-Center169381736410558 Outage Hotline: (319)-825-5207 References: EIA Form EIA-861 Final...

  3. City of Greenfield, Iowa (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    of Greenfield Place: Iowa Phone Number: (641) 743-2741 or (641) 743-2914 Website: gmu-ia.com Facebook: https:www.facebook.comGreenfieldMunicipalUtilities Outage Hotline:...

  4. Greenfield Alternative Study LEU-Mo Fuel Fabrication Facility

    SciTech Connect (OSTI)

    Washington Division of URS

    2008-07-01

    This report provides the initial “first look” of the design of the Greenfield Alternative of the Fuel Fabrication Capability (FFC); a facility to be built at a Greenfield DOE National Laboratory site. The FFC is designed to fabricate LEU-Mo monolithic fuel for the 5 US High Performance Research Reactors (HPRRs). This report provides a pre-conceptual design of the site, facility, process and equipment systems of the FFC; along with a preliminary hazards evaluation, risk assessment as well as the ROM cost and schedule estimate.

  5. Best Practices Case Study: Rural Development, Inc., Wisdom Way Solar Village, Greenfield, MA

    SciTech Connect (OSTI)

    2010-12-01

    Wisdom Way Solar Village is an appropriate moniker for the 20-unit community of energy-efficient duplexes in Greenfield, MA. The homes meet the requirements of the U.S. Department of Energys Builders Challenge, achieving HERS scores of 8 to 18 by packing energy efficiency features into the compact, heavily insulated homes and adding solar water heating and photovoltaics on top, to net home owners energy cost savings of at least $2,500 per year per home.

  6. Nanotube junctions

    DOE Patents [OSTI]

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon Sheng; Zettl, Alexander Karlwalter

    2003-01-01

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  7. Nanotube junctions

    DOE Patents [OSTI]

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon; Zettl, Alexander Karlwalte

    2004-12-28

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  8. Josephson junction

    DOE Patents [OSTI]

    Wendt, J.R.; Plut, T.A.; Martens, J.S.

    1995-05-02

    A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material. 10 figs.

  9. Josephson junction

    DOE Patents [OSTI]

    Wendt, Joel R.; Plut, Thomas A.; Martens, Jon S.

    1995-01-01

    A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material.

  10. PRB coal safety design considerations for new greenfield plants: an EPCC's perspective

    SciTech Connect (OSTI)

    Brown, J.H.

    2007-11-15

    The article reviews the design and safety aspects to consider in a new greenfield Powder River Basin (PRB) coal-fired power plant such as the 200 MW TS Power Plant (TSPP) in Nevada that Fluor is working on as an engineering, procurement and construction contractor (EPCC). PRB coals can become fragmented and form coal dust that is highly volatile and easily self-ignited. Coal handling systems incorporate features to minimise dust, such as totally enclosed chute works, 'spoon drops' to reduce impact turbulence, and overflow hoods. Conveyors have extended skirtboards and tight clearances between the wear plates and the belts. Storage piles are designed to have high compaction to deprive oxygen and dust suppression monitor hydrants to minimise dust and assist in compaction. The coal silo filling bay is designed to minimise dust once the coal is crushed, and attention is paid to cleaning and lighting. The silos are designed to ensure mass flow to the feeder and incorporate a carbon monoxide monitor and an F-500 fire suppressant. 3 photos.

  11. The Carver-Greenfield Process: dehydration/solvent extraction technology for waste treatment

    SciTech Connect (OSTI)

    Trowbridge, T.D.; Holcombe, T.C.

    1996-12-31

    A combination dehydration/solvent extraction treatment technology, the proprietary Carver-Greenfield (C-G) Process, can be used to separate solid/liquid waste materials into three separate product streams convenient for reuse or disposal: (1) clean, dry solids suitable for fixation of nonhazardous landfilling; (2) water virtually free of solids and oils which can be processed in an industrial or public wastewater treatment facility; and, (3) oil indigenous to the feed, a mixture of extracted hydrocarbon-soluble compounds which typically includes any hazardous contaminants which are present. As normally practices, this dehydration/solvent extraction technology involves slurrying water-wet waste in a hydrocarbon solvent which extracts indigenous oil from contaminated solid particles and concentrates it in the solvent phase. Dehydration also takes place during the treatment; water is evaporated and condensed as a separate product. Dry solids are reslurried in fresh solvent one or more additional times depending on the degree of extraction required. Extracted solids are centrifuged away from the solvent and residual solvent in the centrifuge cake vaporized off the final product solids stream in a desolventizer. Indigenous oil from the waste is separated from the solvent by distillation with recovered solvent being recycled to the process. This paper discusses the C-G Process flexibility and economics as applied to various hazardous waste examples including PCB contaminated sediments, soils and sludges, spent drilling fluids (US EPA SITE Program), refinery wastes, manufactured gas plant (MGP) sites, etc. 8 refs., 1 fig., 9 tabs.

  12. Solar Junction | Open Energy Information

    Open Energy Info (EERE)

    Junction Jump to: navigation, search Name: Solar Junction Place: San Jose, California Zip: CA 95131 Sector: Efficiency, Solar Product: Solar Junction is developing high efficiency...

  13. Building America Case Study: Solar Water Heating in Multifamily Buildings, Greenfield, Massachusetts (Fact Sheet), Efficient Solutions for Existing Homes, Energy Efficiency & Renewable Energy (EERE)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar Water Heating in Multifamily Buildings Greenfield, Massachusetts PROJECT INFORMATION Construction: Gut rehab Type: Multifamily Builder: Olive Street Development Partner: Consortium for Advanced Residential Buildings, carb-swa.com Size: 372 ft 2 evacuated tube, 330 gallons storage Price: $31,000 before incentives Incentives Used: * Commonwealth Solar Hot Water Program * 30% Federal tax credit * Modified Accelerated Cost Recovery System (MACRS) * MassSave New Construction program Date

  14. THERMAL EVALUATION OF THE CONCEPTUAL DHLW DISPOSAL CONTAINER LOADED WITH PU/CS GREENFIELD GLASS (SCPB: N/A)

    SciTech Connect (OSTI)

    T.L. Lotz

    1995-11-13

    This analysis is prepared by the Mined Geologic Disposal System (MGDS) Waste Package Development Department (WPDD) as specified in the Waste Package Implementation Plan (pp. 4-8,4-11,4-24,5-1, and 5-13; Ref. 5.10) and Waste Package Plan (pp. 3-15,3-17, and 3-24; Ref. 5.9). The design data request addressed herein is: Characterize the conceptual Defense High Level Waste (DHLW) Disposal Container design to show that the design is feasible for use in the MGDS environment when loaded with a plutonium/cesium greenfield glass waste form. The purpose of this analysis is to respond to a concern that the long-term disposal thermal issues for the conceptual DHLW disposal container design do not preclude compatibility with the MGDS if it is loaded with alternate waste forms. The objective of this analysis is to provide thermal parameter information for the conceptual DHLW disposal container design loaded with an alternative waste form containing a plutonium/cesium mixture under nominal MGDS repository conditions. The results are intended to show that the design loaded with this alternative waste form has a reasonable chance to meet the MGDS design requirements for normal MGDS operation and to provide the required guidance to determining the major design issues for future design efforts. Future design efforts will focus on specific DHLW vendor designs and improved waste form data when they become available.

  15. DOE - Office of Legacy Management -- Grand Junction Sites

    Office of Legacy Management (LM)

    Grand Junction Sites Grand Junction Sites gjmap Grand Junction Disposal Site Grand Junction Processing Site Grand Junction Site Contact Us

  16. Three-junction solar cell

    DOE Patents [OSTI]

    Ludowise, Michael J. (Cupertino, CA)

    1986-01-01

    A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

  17. High-Intensity Silicon Vertical Multi-Junction Solar Cells |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Versatility Can be used in ground-mounted and roof-mounted deployments. Contact Information Mico Perales (216) 535-9200 mico.perales@greenfieldsolar.com GreenField Solar ...

  18. Junction Hilltop Wind | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name Junction Hilltop Wind Facility Junction Hilltop Wind Sector Wind energy Facility Type Community Wind Facility Status In Service Owner Community Owned...

  19. Josephson junction Q-spoiler

    DOE Patents [OSTI]

    Clarke, John; Hilbert, Claude; Hahn, Erwin L.; Sleator, Tycho

    1988-01-01

    An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

  20. Josephson junction Q-spoiler

    DOE Patents [OSTI]

    Clarke, J.; Hilbert, C.; Hahn, E.L.; Sleator, T.

    1986-03-25

    An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

  1. Grand Junction Office Founder Honored...

    Energy Savers [EERE]

    4 Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park Dedication and Open House The U.S. Department of Energy (DOE) Offce of Legacy Management (LM) held an ...

  2. Electronic thermometry in tunable tunnel junction

    DOE Patents [OSTI]

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  3. Annual Inspection of the Grand Junction, Colorado, Site

    Office of Legacy Management (LM)

    6 Annual Inspection - Grand Junction, Colorado, Office Site April 2016 Page 1 Annual Inspection of the Grand Junction, Colorado, Site 1.1 Inspection Summary The Grand Junction, ...

  4. Greenfield Solar | Open Energy Information

    Open Energy Info (EERE)

    Place: Oberlin, Ohio Product: Developer of combined hot water and concentrator photovoltaic systems using in-house, proprietary cell architecture. Coordinates: 41.292925,...

  5. Grand Junction, Colorado, Site Fact Sheet

    Office of Legacy Management (LM)

    D D&D Page 1 of 3 Fact Sheet Grand Junction, Colorado, Site This fact sheet provides information about the Grand Junction, Colorado, Site. This site is managed by the U.S. ...

  6. DOE Grand Junction Projects Office Edgemont LTSP

    Office of Legacy Management (LM)

    DOE Grand Junction Projects Office Edgemont LTSP June 1996 Page ii Contents Page 1.0 Introduction ......

  7. Grundy County Rural Elec Coop | Open Energy Information

    Open Energy Info (EERE)

    Elec Coop Place: Iowa Phone Number: 319-824-5251 Website: www.grundycountyrecia.com Outage Hotline: 1-800-390-7605 Outage Map: www.iowarec.orgoutages References: EIA Form...

  8. Grundy County, Illinois: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Illinois: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 41.3500531, -88.4016041 Show Map Loading map... "minzoom":false,"mappingservice":"goo...

  9. Grundy County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 35.4013452, -85.684578 Show Map Loading map... "minzoom":false,"mappingservice":"googl...

  10. Method for shallow junction formation

    DOE Patents [OSTI]

    Weiner, K.H.

    1996-10-29

    A doping sequence is disclosed that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated. 8 figs.

  11. Method for shallow junction formation

    DOE Patents [OSTI]

    Weiner, Kurt H.

    1996-01-01

    A doping sequence that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated.

  12. Solar Junction Develops World Record Setting Concentrated Photovoltaic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell Solar Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell April 18, 2013 - ...

  13. Preservationists Tour Historic Log Cabin at the Grand Junction...

    Office of Environmental Management (EM)

    Preservationists Tour Historic Log Cabin at the Grand Junction, Colorado, Office Preservationists Tour Historic Log Cabin at the Grand Junction, Colorado, Office April 19, 2016 - ...

  14. Grand Junction Office Founder Honored at the Philip C. Leahy...

    Office of Environmental Management (EM)

    Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park Dedication and Open House Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park ...

  15. Students from Grand Junction High School Triumph in Colorado...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Grand Junction High School Triumph in Colorado Science Bowl For more information contact: e:mail: Public Affairs Golden, Colo., Feb. 12, 2000 - Students from Grand Junction High ...

  16. Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin...

    Office of Scientific and Technical Information (OSTI)

    Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin Temperatures Title: Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin Temperatures ...

  17. Silicon fiber with p-n junction

    SciTech Connect (OSTI)

    Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

    2014-09-22

    In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900??m and core diameters of 20800??m. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

  18. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, Jerry M.; Kurtz, Sarah R.

    1992-01-01

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

  19. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, J.M.; Kurtz, S.R.

    1992-11-24

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

  20. Semiconductor tunnel junction with enhancement layer

    DOE Patents [OSTI]

    Klem, John F.; Zolper, John C.

    1997-01-01

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

  1. Semiconductor tunnel junction with enhancement layer

    DOE Patents [OSTI]

    Klem, J.F.; Zolper, J.C.

    1997-10-21

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.

  2. Multi-junction solar cell device

    DOE Patents [OSTI]

    Friedman, Daniel J.; Geisz, John F.

    2007-12-18

    A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

  3. A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

    SciTech Connect (OSTI)

    Hadley, Austin; Ding, George X.

    2014-01-01

    Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup errorinduced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fields and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans.

  4. Methods for the fabrication of thermally stable magnetic tunnel junctions

    DOE Patents [OSTI]

    Chang, Y. Austin; Yang, Jianhua J.; Ladwig, Peter F.

    2009-08-25

    Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.

  5. Junction-side illuminated silicon detector arrays

    DOE Patents [OSTI]

    Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

    2004-03-30

    A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

  6. Complementary junction heterostructure field-effect transistor

    DOE Patents [OSTI]

    Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

    1995-12-26

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

  7. Complementary junction heterostructure field-effect transistor

    DOE Patents [OSTI]

    Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

    1995-01-01

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

  8. Fluctuation of heat current in Josephson junctions

    SciTech Connect (OSTI)

    Virtanen, P.; Giazotto, F.

    2015-02-15

    We discuss the statistics of heat current between two superconductors at different temperatures connected by a generic weak link. As the electronic heat in superconductors is carried by Bogoliubov quasiparticles, the heat transport fluctuations follow the Levitov–Lesovik relation. We identify the energy-dependent quasiparticle transmission probabilities and discuss the resulting probability density and fluctuation relations of the heat current. We consider multichannel junctions, and find that heat transport in diffusive junctions is unique in that its statistics is independent of the phase difference between the superconductors.

  9. Grand Junction, Colorado, Processing Site and Disposal Sites Fact Sheet

    Office of Legacy Management (LM)

    Grand Junction, Colorado, Disposal and Processing Sites This fact sheet provides information about the Uranium Mill Tailings Radiation Control Act of 1978 Title I disposal and processing sites at Grand Junction, Colorado. These sites are managed by the U.S. Department of Energy Office of Legacy Management. Locations of the Grand Junction, Colorado, Sites Site Description and History The former Grand Junction processing site, historically known as the Climax uranium mill, sits at an elevation of

  10. Solar Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell

    Broader source: Energy.gov [DOE]

    EERE supported the development of Solar Junction's concentrated photovoltaic technology that set a world record for conversion efficiency.

  11. High voltage series connected tandem junction solar battery

    DOE Patents [OSTI]

    Hanak, Joseph J.

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  12. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  13. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C.; Shul, Randy J.

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  14. Semiconductor liquid-junction solar cell

    SciTech Connect (OSTI)

    Parkinson, B.A.

    1982-10-29

    A semiconductor liquid junction photocell in which the photocell is in the configuration of a light concentrator and in which the electrolytic solution both conducts current and facilitates the concentration of incident solar radiation onto the semiconductor. The photocell may be in the configuration of a non-imaging concentrator such as a compound parabolic concentrator, or an imaging concentrator such as a lens.

  15. Tandem junction amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J.

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  16. EA-0930: Facility Operations at the U.S. DOE Grand Junction Projects Office, Grand Junction, Colorado

    Office of Energy Efficiency and Renewable Energy (EERE)

    This EA evaluates the environmental impacts of the proposal to expand and upgrade the U.S. Department of Energy's Grand Junction Projects Office facilities and operations in Grand Junction, Colorado.

  17. QER- Comment of Solar Store of Greenfield

    Broader source: Energy.gov [DOE]

    I speak for many millions of Americans who are ready and able to more the USA towards that goal of 100% renewables by 2050. WE are ready to START TODAY. And in fact we have started already. Thank you for your time and consideration. Claire Chang

  18. Greenfield, Massachusetts: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Massachusetts: Energy Resources Jump to: navigation, search This article is a stub. You can help OpenEI by expanding it. Equivalent URI DBpedia Coordinates 42.5875857,...

  19. Junction conditions in extended Teleparallel gravities

    SciTech Connect (OSTI)

    De la Cruz-Dombriz, lvaro; Dunsby, Peter K.S.; Sez-Gmez, Diego E-mail: peter.dunsby@uct.ac.za

    2014-12-01

    In the context of extended Teleparallel gravity theories, we address the issue of junction conditions required to guarantee the correct matching of different regions of spacetime. In the absence of shells/branes, these conditions turn out to be more restrictive than their counterparts in General Relativity as in other extended theories of gravity. In fact, the general junction conditions on the matching hypersurfaces depend on the underlying theory and a new condition on the induced tetrads in order to avoid delta-like distributions in the field equations. This result imposes strict consequences on the viability of standard solutions such as the Einstein-Straus-like construction. We find that the continuity of the scalar torsion is required in order to recover the usual General Relativity results.

  20. Semiconductor junction formation by directed heat

    DOE Patents [OSTI]

    Campbell, Robert B.

    1988-03-24

    The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.

  1. Highly Charged Ion (HCI) Modified Tunnel Junctions

    SciTech Connect (OSTI)

    Pomeroy, J. M.; Grube, H. [Atomic Physics Division, National Institute of Standards and Technology (NIST) 100 Bureau Dr., MS 8423, Gaithersburg, MD 20899-8423 (United States)

    2009-03-10

    The neutralization energy carried by highly charged ions (HCIs) provides an alternative method for localizing energy on a target's surface, producing features and modifying surfaces with fluences and kinetic energy damage that are negligible compared to singly ionized atoms. Since each HCI can deposit an enormous amount of energy into a small volume of the surface (e.g., Xe{sup 44+} delivers 51 keV of neutralization energy per HCI), each individual HCI's interaction with the target can produce a nanoscale feature. Many studies of HCI-surface features have characterized some basic principles of this unique ion-surface interaction, but the activity reported here has been focused on studying ensembles of HCI features in ultra-thin insulating films by fabricating multi-layer tunnel junction devices. The ultra-thin insulating barriers allow current to flow by tunneling, providing a very sensitive means of detecting changes in the barrier due to highly charged ion irradiation and, conversely, HCI modification provides a method of finely tuning the transparency of the tunnel junctions that spans several orders of magnitude for devices produced from a single process recipe. Systematic variation of junction bias, temperature, magnetic field and other parameters provides determination of the transport mechanism, defect densities, and magnetic properties of these nano-features and this novel approach to device fabrication.

  2. DOE - Office of Legacy Management -- Climax Uranium Co Grand Junction Mill

    Office of Legacy Management (LM)

    - CO 0-03 Climax Uranium Co Grand Junction Mill - CO 0-03 FUSRAP Considered Sites Site: Climax Uranium Co. (Grand Junction Mill) (CO.0-03) Licensed to DOE for long-term custody and managed by the Office of Legacy Management. Designated Name: Grand Junction, Colorado, Processing Site Alternate Name: Climax Uranium Company (Grand Junction Mill) Grand Junction Uranium Mill Tailings Remedial Action Site Climax Mill Site Grand Junction Mill 1 Location: Grand Junction, Colorado Evaluation Year:

  3. Single P-N junction tandem photovoltaic device

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Ager, III, Joel W.; Yu, Kin Man

    2012-03-06

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  4. Single P-N junction tandem photovoltaic device

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Ager, III, Joel W.; Yu, Kin Man

    2011-10-18

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  5. Electromagnetic squeezer for compressing squeezable electron tunneling junctions. Technical report

    SciTech Connect (OSTI)

    Moreland, J.; Hansma, P.K.

    1984-01-01

    The resistance of squeezable electron tunnel junctions (SET junctions) can be adjusted with an electromagnetic squeezer. For junctions immersed in liquid helium, the resistance is stable to approximately 0.1%. This stability is sufficient for measurements of superconducting energy gaps and for superconducting phonon spectroscopy out to 50 mV applied bias. Increased stability, especially at higher biases, will be necessary for inelastic electron tunneling spectroscopy.

  6. Electromagnetic squeezer for compressing squeezable electron tunnelling junctions

    SciTech Connect (OSTI)

    Moreland, J.; Hansma, P.K.

    1984-03-01

    The resistance of squeezable electron tunnel junctions (SET junctions) can be adjusted with an electromagnetic squeezer. For junctions immersed in liquid helium, the resistance is stable to approximately 0.1%. This stability is sufficient for measurements of superconducting energy gaps and for superconducting phonon spectroscopy out to 50-mV applied bias. Increased stability, especially at higher biases, will be necessary for inelastic electron tunnelling spectroscopy.

  7. 2012 Annual Inspection Report for the Grand Junction, Colorado, Site

    Office of Legacy Management (LM)

    Annual Inspection - Grand Junction, Colorado, Site March 2012 Page 1 2012 Annual Inspection Report for the Grand Junction, Colorado, Site Summary The Grand Junction, Colorado, Site was inspected on February 23, 2012, and was in excellent condition. Physical and institutional controls enacted at the site continue to be effective in preventing exposure to contamination remaining on the property. A 5-year deficiency-based inspection of all real property assets in compliance with DOE Order 430.1B

  8. 2013 Annual Inspection Report for the Grand Junction, Colorado, Site

    Office of Legacy Management (LM)

    Annual Inspection - Grand Junction, Colorado, Site April 2013 Page 1 2013 Annual Inspection Report for the Grand Junction, Colorado, Site Summary The Grand Junction, Colorado, Site was inspected on March 4, 2013, and was in excellent condition. Physical and institutional controls enacted at the site continue to be effective in preventing exposure to contamination remaining on the property. No cause for a follow-up inspection was identified. 1.0 Introduction This report presents the results of

  9. Annual Inspection of the Grand Junction, Colorado, Site

    Office of Legacy Management (LM)

    Grand Junction, Colorado, Office Site March 2014 Page 1 Annual Inspection of the Grand Junction, Colorado, Site 1.1 Inspection Summary The Grand Junction, Colorado, Site was inspected on February 19, 2014, and was in excellent condition. Physical and institutional controls enacted at the site continue to be effective in preventing exposure to contamination remaining on the property. No maintenance needs were identified and no cause for a follow-up inspection was identified. The site was

  10. Annual Inspection of the Grand Junction, Colorado, Site

    Office of Legacy Management (LM)

    Grand Junction, Colorado, Office Site March 2015 Page 1 Annual Inspection of the Grand Junction, Colorado, Site 1.1 Inspection Summary The Grand Junction, Colorado, Site was inspected on February 18, 2015, and was in good condition. Physical and institutional controls enacted at the site continue to be effective in preventing exposure to contamination remaining on the property. Two minor maintenance needs were identified; however, no cause for a follow-up inspection was identified. The site was

  11. Superconductive tunnel junction device and method of manufacture

    SciTech Connect (OSTI)

    Kroger, H.

    1983-12-20

    A Josephson tunnel junction device having niobium nitride superconductive electrodes includes a polycrystalline semiconductor tunneling barrier therebetween comprised of silicon, germanium, or an alloy thereof preferably deposited on the lower superconductive electrodes by vapor deposition. The barrier thickness of the junction is controlled by precision doping of the semiconductor material. The active junction is defined after the interfaces between the barrier material and the two superconductor lines are formed, retaining those active interfaces in fully unpolluted character.

  12. DNA Gridiron Nanostructures Based on Four-Arm Junctions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DNA Gridiron Nanostructures Based on Four-Arm Junctions Authors: Han, D., Pal, S., Yang, Y., Jiang, S., Nangreave, J., Liu, Y., and Yan, H. Title: DNA Gridiron Nanostructures Based on Four-Arm Junctions Source: Science Year: 2013 Volume: 339 Pages: 1412-1415 ABSTRACT: Engineering wireframe architectures and scaffolds of increasing complexity is one of the important challenges in nanotechnology. We present a design strategy to create gridiron-like DNA structures. A series of four-arm junctions

  13. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    DOE Patents [OSTI]

    Chang, Y. Austin; Yang, Jianhua Joshua

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  14. Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin

    Office of Scientific and Technical Information (OSTI)

    Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin Temperatures Borzenets, I. V.; Coskun, U. C.; Mebrahtu, H. T.; Bomze, Yu. V.; Smirnov, A. I.; Finkelstein, G....

  15. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis...

    Office of Scientific and Technical Information (OSTI)

    3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNTgraphene junctions. We have started to understand their structural, compositional, more and electronic properties. ...

  16. Grand Junction, Colorado: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    district.12 Registered Energy Companies in Grand Junction, Colorado Ruby Canyon Engineering Inc References US Census Bureau Incorporated place and minor civil...

  17. Van der Waals metal-semiconductor junction: Weak Fermi level...

    Office of Scientific and Technical Information (OSTI)

    Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier Citation Details In-Document Search Title: Van der Waals ...

  18. Apache Junction, Arizona: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Junction, Arizona: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.4150485, -111.5495777 Show Map Loading map... "minzoom":false,"mappingser...

  19. City of Grand Junction, Iowa (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    Iowa (Utility Company) Jump to: navigation, search Name: Grand Junction Municipal Utilities Place: Iowa Phone Number: (515) 738-2285 or (515) 738-2726 Facebook: https:...

  20. Phonon interference effects in molecular junctions

    SciTech Connect (OSTI)

    Markussen, Troels

    2013-12-28

    We study coherent phonon transport through organic, ?-conjugated molecules. Using first principles calculations and Green's function methods, we find that the phonon transmission function in cross-conjugated molecules, like meta-connected benzene, exhibits destructive quantum interference features very analogous to those observed theoretically and experimentally for electron transport in similar molecules. The destructive interference features observed in four different cross-conjugated molecules significantly reduce the thermal conductance with respect to linear conjugated analogues. Such control of the thermal conductance by chemical modifications could be important for thermoelectric applications of molecular junctions.

  1. Subgap biasing of superconducting tunnel junctions without a magnetic field

    SciTech Connect (OSTI)

    Segall, K.; Moyer, J.; Mazo, Juan J.

    2008-08-15

    Superconducting tunnel junctions (STJs) have been successfully used as single-photon detectors but require the use of a magnetic field to operate. A recent paper has proposed the idea to use a circuit of three junctions in place of a single junction in order to achieve the necessary biasing without applying a magnetic field. The nonlinear interaction between the different junctions in the circuit causes the existence of a stable subgap state for one of the junctions, which acts as the detector junction. In this paper, we present the first measurements demonstrating the existence of such a biasing state feasible for STJ detectors. Single junction measurements with an applied magnetic field help determine the functional form of the subgap current versus voltage; then the operating point of a three-junction circuit is measured and fit to theory. The excellent match between theory and experiment demonstrates the existence of the subgap biasing state. The outlook for possible use in detector applications is discussed.

  2. Josephson junctions in high-T/sub c/ superconductors

    DOE Patents [OSTI]

    Falco, C.M.; Lee, T.W.

    1981-01-14

    The invention includes a high T/sub c/ Josephson sperconducting junction as well as the method and apparatus which provides the junction by application of a closely controlled and monitored electrical discharge to a microbridge region connecting two portions of a superconducting film.

  3. Data Compendium for the Logging Test Pits at the ERDA Grand Junction...

    Office of Environmental Management (EM)

    Data Compendium for the Logging Test Pits at the ERDA Grand Junction Compound (December 1975) Data Compendium for the Logging Test Pits at the ERDA Grand Junction Compound ...

  4. Phase diagram of Josephson junction between s and s ± superconductors...

    Office of Scientific and Technical Information (OSTI)

    Publisher's Accepted Manuscript: Phase diagram of Josephson junction between s and s superconductors in the dirty limit Title: Phase diagram of Josephson junction between s and ...

  5. Field-effect P-N junction

    DOE Patents [OSTI]

    Regan, William; Zettl, Alexander

    2015-05-05

    This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

  6. Mechanical deformations of boron nitride nanotubes in crossed junctions

    SciTech Connect (OSTI)

    Zhao, Yadong; Chen, Xiaoming; Ke, Changhong; Park, Cheol; Fay, Catharine C.; Stupkiewicz, Stanislaw

    2014-04-28

    We present a study of the mechanical deformations of boron nitride nanotubes (BNNTs) in crossed junctions. The structure and deformation of the crossed tubes in the junction are characterized by using atomic force microscopy. Our results show that the total tube heights are reduced by 20%33% at the crossed junctions formed by double-walled BNNTs with outer diameters in the range of 2.214.67?nm. The measured tube height reduction is found to be in a nearly linear relationship with the summation of the outer diameters of the two tubes forming the junction. The contact force between the two tubes in the junction is estimated based on contact mechanics theories and found to be within the range of 4.27.6 nN. The Young's modulus of BNNTs and their binding strengths with the substrate are quantified, based on the deformation profile of the upper tube in the junction, and are found to be 1.07??0.11 TPa and 0.180.29 nJ/m, respectively. Finally, we perform finite element simulations on the mechanical deformations of the crossed BNNT junctions. The numerical simulation results are consistent with both the experimental measurements and the analytical analysis. The results reported in this paper contribute to a better understanding of the structural and mechanical properties of BNNTs and to the pursuit of their applications.

  7. Effect of current injection into thin-film Josephson junctions

    SciTech Connect (OSTI)

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to Λ=2λ2/d;λ is the bulk London penetration depth of the film material and d is the film thickness.

  8. Selective niobium anodization process for fabricating Josephson tunnel junctions

    SciTech Connect (OSTI)

    Kroger, H.; Smith, L.N.; Jillie, D.W.

    1981-08-01

    A novel process for fabricating refractory sperconducting tunnel junctions is described, which is useful with both deposited and native oxide barriers. The distinguishing feature of the method is that the entire superconductor-barrier-superconductor sandwich is formed before the patterning of any layer. Isolated Josephson junctions are then formed by anodizing through the upper electrode, while the devices themselves are protected by a photoresist mask. Using this process, Nb-Si:H-Nb junctions have been fabricated, whose product of critical current and subgap resistance exceeds 10 mV and whose critical current density varies by about 50% over a 2-in. diameter wafer.

  9. Effect of current injection into thin-film Josephson junctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to Λ=2λ2/d;λ is the bulk London penetration depth of the film material and d is the film thickness.

  10. Coso Junction, California: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    OpenEI by expanding it. Coso Junction is a city in Inyo County, California. It is in Rose Valley, south of Dunmovin and west of Sugarloaf Mountain.1 Energy Generation...

  11. In the OSTI Collections: Josephson Junctions | OSTI, US Dept...

    Office of Scientific and Technical Information (OSTI)

    ... in ferromagnetic Josephson junctions"DoE PAGES. (a) A niobium base layer 150 nanometers thick. (b) A niobium-aluminum-niobium-gold multilayer stack 87.4 nanometers thick. ...

  12. EA-1037: Uranium Lease Management Program, Grand Junction, Colorado

    Office of Energy Efficiency and Renewable Energy (EERE)

    This EA evaluates the environmental impacts of the U.S. Department of Energy's Grand Junction Projects Office's proposal to maintain and preserve the nation's immediately accessible supply of...

  13. White River Junction, Vermont: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. White River Junction is a census-designated place in Windsor County, Vermont. It falls under...

  14. Manipulating Josephson junctions in thin-films by nearby vortices

    SciTech Connect (OSTI)

    Kogan, V G; Mints, R G

    2014-07-01

    It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I-c(H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I-c(H) has zero at H = 0 instead of the traditional maximum of '0-type' junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction-vortex separation exceeds similar to W, the strip width, I-c(H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges. (C) 2014 Elsevier B.V. All rights reserved.

  15. Single-charge detection by an atomic precision tunnel junction

    SciTech Connect (OSTI)

    House, M. G. Peretz, E.; Keizer, J. G.; Hile, S. J.; Simmons, M. Y.

    2014-03-17

    We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5?nm wide and 17.2?nm long defined by an atomically precise phosphorus doping profile in silicon. The conductance of the junction responds to a nearby gate potential and also to changes in the charge state of a quantum dot patterned 52?nm away. The response of this detector is monotonic across the entire working voltage range of the device, which will make it particularly useful for studying systems of multiple quantum dots. The charge sensitivity is maximized when the junction is most conductive, suggesting that more sensitive detection can be achieved by shortening the length of the junction to increase its conductance.

  16. Phase diagram of Josephson junction between

    Office of Scientific and Technical Information (OSTI)

    diagram of Josephson junction betweensandssuperconductors in the dirty limit...

  17. RESULTS OF RADIOLOGICAL MEASUREMENTS TAKEN NEAR JUNCTION OF HIGHWAY...

    Office of Legacy Management (LM)

    RESULTS OF RADIOLOGICAL MEASUREMENTS TAKEN NEAR JUNCTION OF HIGHWAY 3I AND MILITARY ROAD ... RESULTS OF RADIOLOGTCAL ITEASUREMENfi| TAKEN NEAR JUNCTToN 9F HIGESAY 31 AT.ID MILITARY ...

  18. Tunnel junction enhanced nanowire ultraviolet light emitting diodes

    SciTech Connect (OSTI)

    Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.; Grassman, Tyler J.; McComb, David W.; Myers, Roberto C.

    2015-09-07

    Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junction within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.

  19. Heterojunction for Multi-Junction Solar Cells - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Photovoltaic Solar Photovoltaic Advanced Materials Advanced Materials Find More Like This Return to Search Heterojunction for Multi-Junction Solar Cells Sandia National Laboratories Contact SNL About This Technology Publications: PDF Document Publication Market Sheet (1,250 KB) Technology Marketing SummarySandia National Laboratories has created a semiconductor p-n heterojunction for use in forming a photodetector that has applications for use in a multi-junction solar cell and detecting light

  20. High Efficiency Multiple-Junction Solar Cells - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Find More Like This Return to Search High Efficiency Multiple-Junction Solar Cells Sandia National Laboratories Contact SNL About This Technology Publications: PDF Document Publication Market Sheet (937 KB) Technology Marketing SummarySingle junction solar cells have limited efficiency and fail to extract maximum energy from photons outside of a specific spectral region. Higher efficiency and optical to electrical energy conversion is achieved by stacking

    1. EA-1338: Transfer of the Department of Energy Grand Junction Office to Non-DOE Ownership, Grand Junction, Colorado

      Office of Energy Efficiency and Renewable Energy (EERE)

      This EA evaluates the environmental impacts for the proposed transfer of real and personal property at the U.S. Department of Energy's Grand Junction Office to non-DOE ownership.

    2. Measure Guideline: Optimizing the Configuration of Flexible Duct Junction Boxes

      SciTech Connect (OSTI)

      Beach, R.; Burdick, A.

      2014-03-01

      This measure guideline offers additional recommendations to heating, ventilation, and air conditioning (HVAC) system designers for optimizing flexible duct, constant-volume HVAC systems using junction boxes within Air Conditioning Contractors of America (ACCA) Manual D guidance (Rutkowski, H. Manual D -- Residential Duct Systems, 3rd edition, Version 1.00. Arlington, VA: Air Conditioning Contractors of America, 2009.). IBACOS used computational fluid dynamics software to explore and develop guidance to better control the airflow effects of factors that may impact pressure losses within junction boxes among various design configurations (Beach, R., Prahl, D., and Lange, R. CFD Analysis of Flexible Duct Junction Box Design. Golden, CO: National Renewable Energy Laboratory, submitted for publication 2013). These recommendations can help to ensure that a system aligns more closely with the design and the occupants' comfort expectations. Specifically, the recommendations described herein show how to configure a rectangular box with four outlets, a triangular box with three outlets, metal wyes with two outlets, and multiple configurations for more than four outlets. Designers of HVAC systems, contractors who are fabricating junction boxes on site, and anyone using the ACCA Manual D process for sizing duct runs will find this measure guideline invaluable for more accurately minimizing pressure losses when using junction boxes with flexible ducts.

    3. Advanced materials development for multi-junction monolithic photovoltaic devices

      SciTech Connect (OSTI)

      Dawson, L.R.; Reno, J.L.

      1996-07-01

      We report results in three areas of research relevant to the fabrication of monolithic multi-junction photovoltaic devices. (1) The use of compliant intervening layers grown between highly mismatched materials, GaAs and GaP (same lattice constant as Si), is shown to increase the structural quality of the GaAs overgrowth. (2) The use of digital alloys applied to the MBE growth of GaAs{sub x}Sb{sub l-x} (a candidate material for a two junction solar cell) provides increased control of the alloy composition without degrading the optical properties. (3) A nitrogen plasma discharge is shown to be an excellent p-type doping source for CdTe and ZnTe, both of which are candidate materials for a two junction solar cell.

    4. Junction-based field emission structure for field emission display

      DOE Patents [OSTI]

      Dinh, Long N.; Balooch, Mehdi; McLean, II, William; Schildbach, Marcus A.

      2002-01-01

      A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.

    5. Superpoissonian shot noise in organic magnetic tunnel junctions

      SciTech Connect (OSTI)

      Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G.; Hong, Jhen-Yong; Lin, Minn-Tsong; Szczepański, Tomasz; Dugaev, Vitalii K.; Barnaś, Józef

      2014-12-08

      Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

    6. Environmental Audit of the Grand Junction Projects Office

      SciTech Connect (OSTI)

      Not Available

      1991-08-01

      The Grand Junction Projects Office (GJPO) is located in Mesa County, Colorado, immediately south and west of the Grand Junction city limits. The US Atomic Energy Commission (AEC) established the Colorado Raw Materials Office at the present-day Grand Junction Projects Office in 1947, to aid in the development of a viable domestic uranium industry. Activities at the site included sampling uranium concentrate; pilot-plant milling research, including testing and processing of uranium ores; and operation of a uranium mill pilot plant from 1954 to 1958. The last shipment of uranium concentrate was sent from GJPO in January, 1975. Since that time the site has been utilized to support various DOE programs, such as the former National Uranium Resource Evaluation (NURE) Program, the Uranium Mill Tailings Remedial Action Project (UMTRAP), the Surplus Facilities Management Program (SFMP), and the Technical Measurements Center (TMC). All known contamination at GJPO is believed to be the result of the past uranium milling, analyses, and storage activities. Hazards associated with the wastes impounded at GJPO include surface and ground-water contamination and potential radon and gamma-radiation exposure. This report documents the results of the Baseline Environmental Audit conducted at Grand Junction Projects Office (GJPO) located in Grand Junction, Colorado. The Grand Junction Baseline Environmental Audit was conducted from May 28 to June 12, 1991, by the Office of Environmental Audit (EH-24). This Audit evaluated environmental programs and activities at GJPO, as well as GJPO activities at the State-Owned Temporary Repository. 4 figs., 12 tabs.

    7. Computer-assisted data acquisition on Josephson junctions

      SciTech Connect (OSTI)

      Pagano, S. ); Costabile, G.; Fedullo, V.

      1989-09-01

      An automatic digital data-acquisition system for the test and characterization of superconducting Josephson tunnel junctions is presented. The key feature is represented by the high degree of interaction of the measurement system with the device under test. This is accomplished by an iterated sequence of data acquisitions, automatic analysis, and subsequent modifications of the control signals in the device. In this way, the basic calibration and the value of the relevant quantities involved with the Josephson junction are automatically determined. A connection with a host computer makes possible more complex data analysis, while the full control of the experiment by a dedicated computer allows the operator to perform nonroutine procedures.

    8. Josephson tunnel junctions with chemically vapor deposited polycrystalline germanium barriers

      SciTech Connect (OSTI)

      Kroger, H.; Jillie, D.W.; Smith, L.N.; Phaneuf, L.E.; Potter, C.N.; Shaw, D.M.; Cukauskas, E.J.; Nisenoff, M.

      1984-03-01

      High quality Josephson tunnel junctions have been fabricated whose tunneling barrier is polycrystalline germanium chemically vapor deposited on a NbN base electrode and covered by a Nb counterelectrode. These junctions have excellent characteristics for device applications: values of V/sub m/ (the product of the critical current and the subgap resistance measured at 2 mV and 4.2 K) ranging between 35--48 mV, ideal threshold curves, a steep current rise at the gap voltage, and Josephson current densities from 100 to 1100 A/cm/sup 2/.

    9. Interaction of Josephson Junction and Distant Vortex in Narrow Thin-Film Superconducting Strips

      SciTech Connect (OSTI)

      Kogan, V. G.; Mints, R. G.

      2014-01-31

      The phase difference between the banks of an edge-type planar Josephson junction crossing the narrow thin-film strip depends on wether or not vortices are present in the junction banks. For a vortex close to the junction this effect has been seen by Golod, Rydh, and Krasnov [Phys. Rev. Lett. 104, 227003 (2010)], who showed that the vortex may turn the junction into ? type. It is shown here that even if the vortex is far away from the junction, it still changes the 0 junction to a ? junction when situated close to the strip edges. Within the approximation used, the effect is independent of the vortex-junction separation, a manifestation of the topology of the vortex phase which extends to macroscopic distances of superconducting coherence.

    10. Optimized Triple-Junction Solar Cells Using Inverted Metamorphic Approach (Presentation)

      SciTech Connect (OSTI)

      Geisz, J. F.

      2008-11-01

      Record efficiencies with triple-junction inverted metamorphic designs, modeling useful to optimize, and consider operating conditions before choosing design.

    11. EERE Success Story—Solar Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell

      Broader source: Energy.gov [DOE]

      EERE supported the development of Solar Junction's concentrated photovoltaic technology that set a world record for conversion efficiency.

    12. DOE/Grand Junction Office Bluewater LTSP July 1997 Doc. No. S00012AA...

      Office of Legacy Management (LM)

      DOEGrand Junction Office Bluewater LTSP July 1997 Doc. No. S00012AA, Page iii Contents Page 1.0 Introduction ......

    13. Performance model assessment for multi-junction concentrating photovoltaic systems.

      SciTech Connect (OSTI)

      Riley, Daniel M.; McConnell, Robert.; Sahm, Aaron; Crawford, Clark; King, David L.; Cameron, Christopher P.; Foresi, James S.

      2010-03-01

      Four approaches to modeling multi-junction concentrating photovoltaic system performance are assessed by comparing modeled performance to measured performance. Measured weather, irradiance, and system performance data were collected on two systems over a one month period. Residual analysis is used to assess the models and to identify opportunities for model improvement.

    14. Measure Guideline: Optimizing the Configuration of Flexible Duct Junction Boxes

      SciTech Connect (OSTI)

      Beach, R.; Burdick, A.

      2014-03-01

      This measure guideline offers additional recommendations to heating, ventilation, and air conditioning (HVAC) system designers for optimizing flexible duct, constant-volume HVAC systems using junction boxes within Air Conditioning Contractors of America (ACCA) Manual D guidance. IBACOS used computational fluid dynamics software to explore and develop guidance to better control the airflow effects of factors that may impact pressure losses within junction boxes among various design configurations. These recommendations can help to ensure that a system aligns more closely with the design and the occupants' comfort expectations. Specifically, the recommendations described herein show how to configure a rectangular box with four outlets, a triangular box with three outlets, metal wyes with two outlets, and multiple configurations for more than four outlets. Designers of HVAC systems, contractors who are fabricating junction boxes on site, and anyone using the ACCA Manual D process for sizing duct runs will find this measure guideline invaluable for more accurately minimizing pressure losses when using junction boxes with flexible ducts.

    15. ALTERNATIVE MATERIALS FOR RAMP-EDGE SNS JUNCTIONS

      SciTech Connect (OSTI)

      Jia, Q.; Fan, Y.

      1999-06-01

      We report on the processing optimization and fabrication of ramp-edge high-temperature superconducting junctions by using alternative materials for both superconductor electrodes and normal-metal barrier. By using Ag-doped YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (Ag:YBCO) as electrodes and a cation-modified compound of (Pr{sub y}Gd{sub 0.6{minus}y})Ca{sub 0.4}Ba{sub 1.6}La{sub 0.4}Cu{sub 3}O{sub 7} (y = 0.4, 0.5, and 0.6) as a normal-metal barrier, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. By using Ag:YBCO as electrodes, we have found that the processing controllability /reproducibility and the stability of the SNS junctions are improved substantially. The junctions fabricated with these alternative materials show well-defined RSJ-like current vs voltage characteristics at liquid nitrogen temperature.

    16. August 2015 Groundwater Sampling at the Grand Junction, Colorado, Disposal Site

      Office of Legacy Management (LM)

      Sampling at the Grand Junction, Colorado, Disposal Site October 2015 LMS/GRJ/S00815 This page intentionally left blank U.S. Department of Energy DVP-August 2015, Grand Junction, Colorado October 2015 RIN 15077245 Page i Contents Sampling Event Summary ...............................................................................................................1 Grand Junction, Colorado, Disposal Site, Sample Location Map ...................................................3 Data Assessment

    17. January 2016 Groundwater and Surface Water Sampling at the Grand Junction, Colorado, Processing Site

      Office of Legacy Management (LM)

      6 Groundwater and Surface Water Sampling at the Grand Junction, Colorado, Processing Site March 2016 LMS/GJT/S00116 This page intentionally left blank U.S. Department of Energy DVP-January 2016, Grand Junction, Colorado March 2016 RIN 15127576 Page i Contents Sampling Event Summary ...............................................................................................................1 Grand Junction, Colorado, Processing Site, Sample Location Map

    18. The chaotic oscillations of a Josephson junction with external magnetic field

      SciTech Connect (OSTI)

      Ma, J.G.; Wolff, I.

      1996-05-01

      Using the Melnikov Method the oscillation of a single Josephson junction with external magnetic field and DC bias is analyzed. Under the external magnetic field the junction can operate in chaos even if there is no bias. The numerical results show that in dependence on some parameters the Josephson junction with external magnetic field will go from stable periodic states to chaotic states.

    19. Antireflection Coating Design for Series Interconnected Multi-Junction Solar Cells

      SciTech Connect (OSTI)

      AIKEN,DANIEL J.

      1999-11-29

      AR coating design for multi-junction solar cells can be more challenging than in the single junction case. Reasons for this are discussed. Analytical expressions used to optimize AR coatings for single junction solar cells are extended for use in monolithic, series interconnected multi-junction solar cell AR coating design. The result is an analytical expression which relates the solar cell performance (through J{sub SC}) directly to the AR coating design through the device reflectance. It is also illustrated how AR coating design can be used to provide an additional degree of freedom for current matching multi-junction devices.

    20. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

      SciTech Connect (OSTI)

      SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

      2000-05-16

      Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

    1. Towards understanding junction degradation in cadmium telluride solar cells

      SciTech Connect (OSTI)

      Nardone, Marco

      2014-06-21

      A degradation mechanism in cadmium telluride (CdTe/CdS) solar cells is investigated using time-dependent numerical modeling to simulate various temperature, bias, and illumination stress conditions. The physical mechanism is based on defect generation rates that are proportional to nonequilibrium charge carrier concentrations. It is found that a commonly observed degradation mode for CdTe/CdS solar cells can be reproduced only if defects are allowed to form in a narrow region of the absorber layer close to the CdTe/CdS junction. A key aspect of this junction degradation is that both mid-gap donor and shallow acceptor-type defects must be generated simultaneously in response to photo-excitation or applied bias. The numerical approach employed here can be extended to study other mechanisms for any photovoltaic technology.

    2. Millikelvin cooling by heavy-fermion-based tunnel junctions

      SciTech Connect (OSTI)

      Prest, Martin; Min, Gao; Whall, Terry

      2015-12-28

      This paper addresses a high-performance electron-tunneling cooler based on a novel heavy-fermion/insulator/superconductor junction for millikelvin cooling applications. We show that the cooling performance of an electronic tunneling refrigerator could be significantly improved using a heavy-fermion metal to replace the normal metal in a conventional normal metal/insulator/superconductor junction. The calculation, based on typical parameters, indicates that, for a bath temperature of 300 mK, the minimum cooling temperature of an electron tunneling refrigerator is reduced from around 170 mK to below 50 mK if a heavy-fermion metal is employed in place of the normal metal. The improved cooling is attributed to an enhancement in electron tunneling due to the existence of a resonant density of states at the Fermi level.

    3. Grain boundary and triple junction diffusion in nanocrystalline copper

      SciTech Connect (OSTI)

      Wegner, M. Leuthold, J.; Peterlechner, M.; Divinski, S. V.; Song, X.; Wilde, G.

      2014-09-07

      Grain boundary and triple junction diffusion in nanocrystalline Cu samples with grain sizes, ?d?, of ?35 and ?44?nm produced by spark plasma sintering were investigated by the radiotracer method using the {sup 63}Ni isotope. The measured diffusivities, D{sub eff}, are comparable with those determined previously for Ni grain boundary diffusion in well-annealed, high purity, coarse grained, polycrystalline copper, substantiating the absence of a grain size effect on the kinetic properties of grain boundaries in a nanocrystalline material at grain sizes d???35?nm. Simultaneously, the analysis predicts that if triple junction diffusion of Ni in Cu is enhanced with respect to the corresponding grain boundary diffusion rate, it is still less than 500?D{sub gb} within the temperature interval from 420?K to 470?K.

    4. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

      SciTech Connect (OSTI)

      Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

      2011-01-01

      We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

    5. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

      SciTech Connect (OSTI)

      Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

      2011-07-01

      We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

    6. Fractional quantum Hall junctions and two-channel Kondo models

      SciTech Connect (OSTI)

      Sandler, Nancy P.; Fradkin, Eduardo

      2001-06-15

      A mapping between fractional quantum Hall (FQH) junctions and the two-channel Kondo model is presented. We discuss this relation in detail for the particular case of a junction of a FQH state at {nu}=1/3 and a normal metal. We show that in the strong coupling regime this junction has a non-Fermi-liquid fixed point. At this fixed point the electron Green{close_quote}s function has a branch cut and the impurity entropy is equal to S=1/2ln2. We construct the space of perturbations at the strong coupling fixed point and find that the dimension of the tunneling operator is 1/2. These properties are strongly reminiscent of the non-Fermi-liquid fixed points of a number of quantum impurity models, particularly the two-channel Kondo model. However we have found that, in spite of these similarities, the Hilbert spaces of these two systems are quite different. In particular, although in a special limit the Hamiltonians of both systems are the same, their Hilbert spaces are not since they are determined by physically distinct boundary conditions. As a consequence the spectrum of operators in the two problems is different.

    7. Environmental assessment of facility operations at the U.S. Department of Energy Grand Junction Projects Office, Grand Junction, Colorado

      SciTech Connect (OSTI)

      1996-06-01

      The US Department of Energy (DOE) has prepared a sitewide environmental assessment (EA) of the proposed action to continue and expand present-day activities on the DOE Grand Junction Projects Office (GJPO) facility in Grand Junction, Colorado. Because DOE-GJPO regularly proposes and conducts many different on-site activities, DOE decided to evaluate these activities in one sitewide EA rather than in multiple, activity-specific documents. On the basis of the information and analyses presented in the EA, DOE has determined that the proposed action does not constitute a major Federal action significantly affecting the quality of the human environment, as defined by the National Environmental Policy Act (NEPA) of 1969. Therefore, preparation of an environmental impact statement is not required for facility operations, and DOE is issuing this Finding of No Significant Impact (FONSI).

    8. Joint measurement of current-phase relations and transport properties of hybrid junctions using a three junctions superconducting quantum interference device

      SciTech Connect (OSTI)

      Basset, J.; Delagrange, R.; Weil, R.; Kasumov, A.; Bouchiat, H.; Deblock, R.

      2014-07-14

      We propose a scheme to measure both the current-phase relation and differential conductance dI/dV of a superconducting junction, in the normal and the superconducting states. This is done using a dc Superconducting Quantum Interference Device with two Josephson junctions in parallel with the device under investigation and three contacts. As a demonstration, we measure the current-phase relation and dI/dV of a small Josephson junction and a carbon nanotube junction. In this latter case, in a regime where the nanotube is well conducting, we show that the non-sinusoidal current phase relation we find is consistent with the theory for a weak link, using the transmission extracted from the differential conductance in the normal state. This method holds great promise for future investigations of the current-phase relation of more exotic junctions.

    9. A Model for the Behavior of Magnetic Tunnel Junctions

      SciTech Connect (OSTI)

      Bryan John Baker

      2003-08-05

      A magnetic tunnel junction is a device that changes its electrical resistance with a change in an applied magnetic field. A typical junction consists of two magnetic electrodes separated by a nonmagnetic insulating layer. The magnetizations of the two electrodes can have two possible extreme configurations, parallel and antiparallel. The antiparallel configuration is observed to have the higher measured resistance and the parallel configuration has the lower resistance. To switch between these two configurations a magnetic field is applied to the device which is primarily used to change the orientation of the magnetization of one electrode usually called the free layer, although with sufficient high magnetic field the orientation of the magnetizations of both of the electrodes can be changed. The most commonly used models for describing and explaining the electronic behavior of tunnel junctions are the Simmons model and the Brinkman model. However, both of these models were designed for simple, spin independent tunneling. The Simmons model does not address the issue of applied magnetic fields nor does it address the form of the electronic band structure in the metallic electrodes, including the important factor of spin polarization. The Brinkman model is similar, the main difference between the two models being the shape of the tunneling barrier potential between the two electrodes. Therefore, the research conducted in this thesis has developed a new theoretical model that addresses these important issues starting from basic principles. The main features of the new model include: the development of equations for true spin dependent tunneling through the insulating barrier, the differences in the orientations of the electrode magnetizations on either side of the barrier, and the effects of the density of states function on the behavior of the junction. The present work has explored densities of states that are more realistic than the simplified free electron density

    10. Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

      DOE Patents [OSTI]

      Toet, Daniel; Sigmon, Thomas W.

      2005-08-23

      A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

    11. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

      DOE Patents [OSTI]

      Toet, Daniel; Sigmon, Thomas W.

      2003-01-01

      A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

    12. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

      DOE Patents [OSTI]

      Toet, Daniel; Sigmon, Thomas W.

      2004-12-07

      A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

    13. Greenfield, New Hampshire: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      County, New Hampshire.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

    14. Building America Case Study: Conway Street Apartments, Greenfield...

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      Project Name: Conway Street Apartments: A Multifamily Deep ... America program is engineering the American home for ... LIGHTING, APPLIANCES, AND WATER HEATING * Solar thermal ...

    15. Shunt-capacitor-assisted synchronization of oscillations in intrinsic Josephson junctions stack.

      SciTech Connect (OSTI)

      Martin, I.; Halasz, G. B.; Bulaevskii, L. N.; Koshelev, A. E.; Materials Science Division; LANL

      2010-08-06

      We show that a shunt capacitor, by coupling each Josephson junction to all the other junctions, stabilizes synchronized oscillations in an intrinsic Josephson junction stack biased by a dc current. This synchronization mechanism is similar to the previously discussed radiative coupling between junctions, however, it is not defined by the geometry of the stack. It is particularly important in crystals with smaller numbers of junctions (where the radiation coupling is weak), and is comparable with the effect of strong super-radiation in crystals with many junctions. The shunt also helps to enter the phase-locked regime in the beginning of the oscillations, after switching on the bias current. Furthermore, it may be used to tune radiation power, which drops as the shunt capacitance increases.

    16. Voltage dependence of the differential capacitance of a p{sup +}-n junction

      SciTech Connect (OSTI)

      Shekhovtsov, N. A.

      2013-04-15

      The dependences of the differential capacitance and current of a p{sup +}-n junction with a uniformly doped n region on the voltage in the junction region are calculated. The p{sup +}-n junction capacitance controls the charge change in the junction region taking into account a change in the electric field of the quasi-neutral n region and a change in its bipolar drift mobility with increasing excess charge-carrier concentration. It is shown that the change in the sign of the p{sup +}-n junction capacitance with increasing injection level is caused by a decrease in the bipolar drift mobility as the electron-hole pair concentration in the n region increases. It is shown that the p{sup +}-n junction capacitance decreases with increasing reverse voltage and tends to a constant positive value.

    17. GaInNAs Junctions for Next-Generation Concentrators: Progress and Prospects

      SciTech Connect (OSTI)

      Friedman, D. J.; Ptak, A. J.; Kurtz, S. R.; Geisz, J. F.; Kiehl, J.

      2005-08-01

      We discuss progress in the development of GaInNAs junctions for application in next-generation multijunction concentrator cells. A significant development is the demonstration of near-100% internal quantum efficiencies in junctions grown by molecular-beam epitaxy. Testing at high currents validates the compatibility of these devices with concentrator operation. The efficiencies of several next-generation multijunction structures incorporating these state-of-the-art GaInNAs junctions are projected.

    18. Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers

      SciTech Connect (OSTI)

      Jillie, D.W.; Kroger, H.; Smith, L.N.; Cukauskas, E.J.; Nisenoff, M.

      1982-04-15

      Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers (NbN-..cap alpha..Si-Nb) have been prepared using processing that is fully compatible with integrated circuit fabrication. These junctions are of suitable quality and uniformity for digital circuit and S-I-S detector applications. The junction quality depends critically upon the properties of the NbN surface, and seems to correlate well with the UV/visible reflectivity of this surface.

    19. Grand Junction, Colorado, Disposal Site Long-Term Surveillance and Maintenance Program Fact Sheet, July 2001

      Office of Legacy Management (LM)

      Grand Junction Disposal Site Uranium ore was processed at the Climax millsite at Grand Junction, Colorado, between 1951 and 1970. The milling operations created process-related waste and tailings, a sandlike material containing radioactive materials and other contaminants. The tailings were an ideal and inexpensive construction material suitable for concrete, mortar, and fill. Accordingly, the tailings were widely used in the Grand Junction area for these purposes. The U.S. Department of Energy

    20. 2011 Annual Planning Summary for Office of Legacy Management (LM), Grand Junction (See LM APS)

      Broader source: Energy.gov [DOE]

      The ongoing and projected Environmental Assessments and Environmental Impact Statements for 2011 and 2012 within the Office of Legacy Management (LM), Grand Junction (See LM APS).

    1. Proper Orthogonal Decomposition of the Flow in a T-Junction ...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      T-Junction (In: Advances in Nuclear Power Plants) Authors: Merzari, E., Pointer, W.D., ... Congress on Advances in Nuclear Power Plants 2010 (ICAPP 2010) Publisher: Curran ...

    2. NREL and CSEM Jointly Set New Efficiency Record with Dual-Junction...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      NREL and CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell January 5, 2016 Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) and...

    3. AmeriFlux US-Bn1 Bonanza Creek, 1920 Burn site near Delta Junction

      DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

      Randerson, James [University of California, Irvine

      2016-01-01

      This is the AmeriFlux version of the carbon flux data for the site US-Bn1 Bonanza Creek, 1920 Burn site near Delta Junction. Site Description - The Delta Junction 1920 Control site is located near Delta Junction, just to the north of the Alaska Range in interior Alaska. All three Delta Junction sites are within a 15-km radius of one another. Composed of a combination of alluvial outwashes, floodplains, and low terraces dissected by glacial streams originating in the nearby Alaska Range. In 2001, total aboveground biomass consisted almost entirely of black spruce (Picea mariana).

    4. Enhancement of tunnel magnetoresistance in magnetic tunnel junction by a superlattice barrier

      SciTech Connect (OSTI)

      Chen, C. H.; Hsueh, W. J.

      2014-01-27

      Tunnel magnetoresistance of magnetic tunnel junction improved by a superlattice barrier composed of alternate layers of a nonmagnetic metal and an insulator is proposed. The forbidden band of the superlattice is used to predict the low transmission range in the superlattice barrier. By forbidding electron transport in the anti-parallel configuration, the tunnel magnetoresistance is enhanced in the superlattice junction. The results show that the tunnel magnetoresistance ratio for a superlattice magnetic tunnel junction is greater than that for traditional single or double barrier junctions.

    5. NREL and CSEM Jointly Set New Efficiency Record with Dual-Junction...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      NREL and CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell January 5, 2016 Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) and ...

    6. Engineering ferroelectric tunnel junctions through potential profile shaping

      SciTech Connect (OSTI)

      Boyn, S.; Garcia, V. Fusil, S.; Carrtro, C.; Garcia, K.; Collin, S.; Deranlot, C.; Bibes, M.; Barthlmy, A.

      2015-06-01

      We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

    7. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint

      SciTech Connect (OSTI)

      Geisz, J. F.; Kurtz, S. R.; Wanlass, M. W.; Ward, J. S.; Duda, A.; Friedman, D. J.; Olson, J. M.; McMahon, W. E.; Moriarty, T. E.; Kiehl, J. T.; Romero, M. J.; Norman, A. G.; Jones, K. M.

      2008-05-01

      We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.

    8. December 2015 Groundwater and Surface Waater Sampling at the Grand Junction, Colorado, Site

      Office of Legacy Management (LM)

      and Surface Water Sampling at the Grand Junction, Colorado, Site March 2016 LMS/GJO/S01215 This page intentionally left blank U.S. Department of Energy DVP-December 2015, Grand Junction, Colorado March 2016 RIN 15117528 Page i Contents Sampling Event Summary ...............................................................................................................1 Data Assessment Summary

    9. Josephson tunnel junction with polycrystalline silicon, germanium or silicon-germanium alloy tunneling barrier

      SciTech Connect (OSTI)

      Kroger, H.

      1980-09-02

      A Josephson tunnel junction device having niobium nitride superconductive electrodes includes a polycrystalline semiconductor tunnelling barrier therebetween comprised of silicon, germanium or an alloy thereof preferably deposited on the lower superconductive electrodes by chemical vapor deposition. The barrier height of the junction is precisely controlled by precision doping of the semiconductor material.

    10. Low temperature junction growth using hot-wire chemical vapor deposition

      SciTech Connect (OSTI)

      Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

      2014-02-04

      A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

    11. Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

      SciTech Connect (OSTI)

      Imtiaz, Atif; Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel; Weber, Joel C.; Coakley, Kevin J.

      2014-06-30

      We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ?}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ?}? effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ?} images.

    12. Dislocation Dynamics Simulations of Junctions in Hexagonal Close-Packed Crystals

      SciTech Connect (OSTI)

      Wu, C; Aubry, S; Chung, P; Arsenlis, A

      2011-12-05

      The formation and strength of dislocations in the hexagonal closed packed material beryllium are studied through dislocation junctions and the critical stress required to break them. Dislocation dynamics calculations (using the code ParaDiS) of junction maps are compared to an analytical line tension approximation in order to validate our model. Results show that the two models agree very well. Also the critical shear stress necessary to break 30{sup o} - 30{sup o} and 30{sup o} - 90{sup o} dislocation junctions is computed numerically. Yield surfaces are mapped out for these junctions to describe their stability regions as function of resolved shear stresses on the glide planes. The example of two non-coplanar binary dislocation junctions with slip planes [2-1-10] (01-10) and [-12-10] (0001) corresponding to a prismatic and basal slip respectively is chosen to verify and validate our implementation.

    13. Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

      SciTech Connect (OSTI)

      Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.; Fringer, Oliver B.; Monismith, Stephen G.

      2014-12-17

      In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Doppler Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.

    14. Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

      SciTech Connect (OSTI)

      Woodyard, J.R.

      1995-10-01

      Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. The authors report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to `fit` the spectral irradiance of the dual-source solar simulator to WRL AMO data.

    15. Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.; Fringer, Oliver B.; Monismith, Stephen G.

      2014-12-17

      In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Dopplermore » Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.« less

    16. Ischemic preconditioning enhances integrity of coronary endothelial tight junctions

      SciTech Connect (OSTI)

      Li, Zhao; Jin, Zhu-Qiu

      2012-08-31

      Highlights: Black-Right-Pointing-Pointer Cardiac tight junctions are present between coronary endothelial cells. Black-Right-Pointing-Pointer Ischemic preconditioning preserves the structural and functional integrity of tight junctions. Black-Right-Pointing-Pointer Myocardial edema is prevented in hearts subjected to ischemic preconditioning. Black-Right-Pointing-Pointer Ischemic preconditioning enhances translocation of ZO-2 from cytosol to cytoskeleton. -- Abstract: Ischemic preconditioning (IPC) is one of the most effective procedures known to protect hearts against ischemia/reperfusion (IR) injury. Tight junction (TJ) barriers occur between coronary endothelial cells. TJs provide barrier function to maintain the homeostasis of the inner environment of tissues. However, the effect of IPC on the structure and function of cardiac TJs remains unknown. We tested the hypothesis that myocardial IR injury ruptures the structure of TJs and impairs endothelial permeability whereas IPC preserves the structural and functional integrity of TJs in the blood-heart barrier. Langendorff hearts from C57BL/6J mice were prepared and perfused with Krebs-Henseleit buffer. Cardiac function, creatine kinase release, and myocardial edema were measured. Cardiac TJ function was evaluated by measuring Evans blue-conjugated albumin (EBA) content in the extravascular compartment of hearts. Expression and translocation of zonula occludens (ZO)-2 in IR and IPC hearts were detected with Western blot. A subset of hearts was processed for the observation of ultra-structure of cardiac TJs with transmission electron microscopy. There were clear TJs between coronary endothelial cells of mouse hearts. IR caused the collapse of TJs whereas IPC sustained the structure of TJs. IR increased extravascular EBA content in the heart and myocardial edema but decreased the expression of ZO-2 in the cytoskeleton. IPC maintained the structure of TJs. Cardiac EBA content and edema were reduced in IPC hearts. IPC

    17. Cooperative Research between NREL and Solar Junction Corp: Cooperative Research and Development Final Report, CRADA Number CRD-08-306

      SciTech Connect (OSTI)

      Friedman, D.

      2015-03-01

      NREL and Solar Junction Corp. will perform cooperative research on materials and devices that are alternatives to standard approaches with the goal of improving solar cell efficiency while lowering cost. The general purpose of this work is to model the performance of a multi-junction concentrator cell of Solar Junction, Inc. design under normal concentrator operating conditions.

    18. Chemical Fabrication of Heterometallic Nanogaps for Molecular Transport Junctions

      SciTech Connect (OSTI)

      Chen, Xiaodong; Yeganeh, Sina; Qin, Lidong; Li, Shuzhou; Xue, Can; Braunschweig, Adam B.; Schatz, George C.; Ratner, Mark A.; Mirkin, Chad A.

      2009-01-01

      We report a simple and reproducible method for fabricating heterometallic nanogaps, which are made of two different metal nanorods separated by a nanometer-sized gap. The method is based upon on-wire lithography, which is a chemically enabled technique used to synthesize a wide variety of nanowire-based structures (e.g., nanogaps and disk arrays). This method can be used to fabricate pairs of metallic electrodes, which exhibit distinct work functions and are separated by gaps as small as 2 nm. Furthermore, we demonstrate that a symmetric thiol-terminated molecule can be assembled into such heterometallic nanogaps to form molecular transport junctions (MTJs) that exhibit molecular diode behavior. Theoretical calculations demonstrate that the coupling strength between gold and sulfur (Au-S) is 2.5 times stronger than that of Pt-S. In addition, the structures form Raman hot spots in the gap, allowing the spectroscopic characterization of the molecules that make up the MTJs.

    19. Performance model assessment for multi-junction concentrating photovoltaic systems.

      SciTech Connect (OSTI)

      Stein, Joshua S.; Riley, Daniel M.; McConnell, Robert.; Sahm, Aaron; Crawford, Clark; King, David L.; Cameron, Christopher P.; Foresi, James S.

      2010-03-01

      Four approaches to modeling multi-junction concentrating photovoltaic system performance are assessed by comparing modeled performance to measured performance. Measured weather, irradiance, and system performance data were collected on two systems over a one month period. Residual analysis is used to assess the models and to identify opportunities for model improvement. Large photovoltaic systems are typically developed as projects which supply electricity to a utility and are owned by independent power producers. Obtaining financing at favorable rates and attracting investors requires confidence in the projected energy yield from the plant. In this paper, various performance models for projecting annual energy yield from Concentrating Photovoltaic (CPV) systems are assessed by comparing measured system output to model predictions based on measured weather and irradiance data. The results are statistically analyzed to identify systematic error sources.

    20. Fluxons in a triangular set of coupled long Josephson junctions

      SciTech Connect (OSTI)

      Yukon, Stanford P.; Malomed, Boris A.

      2015-09-15

      We report results of an analysis of the dynamics of magnetic flux solitons in the system of three long Josephson junctions between three bulk superconductors that form a prism. The system is modeled by coupled sine-Gordon equations for the phases of the junctions. The Aharonov-Bohm constraint takes into account the axial magnetic flux enclosed by the prism and reduces the system from three independent phases to two. The equations of motion for the phases include dissipative terms, and a control parameter δ which accounts for the deviation of the enclosed flux from half a quantum. Analyzing the effective potential of the coupled equations, we identify different species of topological and non-topological phase solitons (fluxons) in this system. In particular, subkinks with fractional topological charges ±1/3 and ±2/3, confined inside integer-charge fluxons, may be mapped onto the root diagrams for mesons and baryons in the original quark model of hadrons. Solutions for straight-line kinks and for two types of non-topological solitons are obtained in an explicit analytical form. Numerical tests demonstrate that the former species is unstable against breakup into pairs of separating single-fluxon kinks. The non-topological kinks feature metastability, eventually breaking up into fluxon-antifluxon pairs. Free fractional-fluxon kinks, that connect different potential minima and are, accordingly, pulled by the potential difference, are also considered. Using the momentum-balance method, we predict the velocity at which these kinks should move in the presence of the dissipation. Numerical tests demonstrate that the analysis predicts the velocity quite closely. Higher-energy static solutions for all of the stable kink types mentioned above, as well as kinks connecting false vacua, are found by means of the shooting method. Inelastic collisions among the stable fractional and single-fluxon kinks are investigated numerically.

    1. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

      DOE Patents [OSTI]

      Madan, A.

      1984-12-10

      A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

    2. Realistic-contact-induced enhancement of rectifying in carbon-nanotube/graphene-nanoribbon junctions

      SciTech Connect (OSTI)

      Zhang, Xiang-Hua [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China); Department of Electrical and Information Engineering, Hunan Institute of Engineering, Xiangtan 411101 (China); Li, Xiao-Fei, E-mail: xfli@theochem.kth.se [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Ling-Ling, E-mail: llwang@hnu.edu.cn; Xu, Liang; Luo, Kai-Wu [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China)

      2014-03-10

      Carbon-nanotube/graphene-nanoribbon junctions were recently fabricated by the controllable etching of single-walled carbon-nanotubes [Wei et al., Nat. Commun. 4, 1374 (2013)] and their electronic transport properties were studied here. First principles results reveal that the transmission function of the junctions show a heavy dependence on the shape of contacts, but rectifying is an inherent property which is insensitive to the details of contacts. Interestingly, the rectifying ratio is largely enhanced in the junction with a realistic contact and the enhancement is insensitive to the details of contact structures. The stability of rectifying suggests a significant feasibility to manufacture realistic all-carbon rectifiers in nanoelectronics.

    3. Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios

      SciTech Connect (OSTI)

      Khan, Aurangzeb; Yamaguchi, Masafumi; Takamoto, Tatsuya

      2004-10-11

      A study of the performance of single-junction InGaP/GaAs and dual-junction InGaP/GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (J{sub P}) and valley current (J{sub V}) densities should be greater than the short-circuit current density (J{sub sc}) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (J{sub P}) and valley current density (J{sub V}) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP/GaAs tandem solar cell can be enhanced even under low concentration ratios.

    4. Updated Radiation Exhibit Unveiled at Math and Science Center in Grand Junction, Colorado

      Broader source: Energy.gov [DOE]

      A newly updated radiation exhibit, created by the U.S. Department of Energy (DOE) Office of Legacy Management (LM) office in Grand Junction, Colorado, was recently unveiled at the John McConnell...

    5. Method And Apparatus For Reducing Sample Dispersion In Turns And Junctions Of Micro-Channel Systems

      DOE Patents [OSTI]

      Griffiths, Stewart K. , Nilson, Robert H.

      2004-05-11

      What is disclosed pertains to improvement in the performance of microchannel devices by providing turns, wyes, tees, and other junctions that produce little dispersion of a sample as it traverses the turn or junction. The reduced dispersion results from contraction and expansion regions that reduce the cross-sectional area over some portion of the turn or junction. By carefully designing the geometries of these regions, sample dispersion in turns and junctions is reduced to levels comparable to the effects of ordinary diffusion. The low dispersion features are particularly suited for microfluidic devices and systems using either electromotive force, pressure, or combinations thereof as the principle of fluid transport. Such microfluidic devices and systems are useful for separation of components, sample transport, reaction, mixing, dilution or synthesis, or combinations thereof.

    6. Technology Solutions Case Study: New Insights for Improving the Designs of Flexible Duct Junction Boxes

      SciTech Connect (OSTI)

      2014-01-01

      In this project, IBACOS explored the relationships between pressure and physical configurations of flexible duct junction boxes by using computational fluid dynamics simulations to predict individual box parameters and total system pressure, thereby ensuring improved HVAC performance.

    7. A Manufacturing Cost Analysis Relevant to Single- and Dual-Junction...

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      A Manufacturing Cost Analysis Relevant to Single- and Dual-Junction Photovoltaic Cells Fabricated with III-Vs and III-Vs Grown on Silicon A Manufacturing Cost Analysis Relevant to ...

    8. Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

      SciTech Connect (OSTI)

      Geisz, John F.; France, Ryan M.; Steiner, Myles A.; Friedman, Daniel J.; Garca, Ivn

      2014-09-26

      Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be applied to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.

    9. Materials en Multi-junction Solar Cells to Push CPV Efficiencies...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      ceem.ucsb.edurss News and Events - Center for Energy Efficient Materials en Multi-junction Solar Cells to Push CPV Efficiencies Beyond 50% http:www.compoundsemiconductor.net...

    10. Highly efficient organic multi-junction solar cells with a thiophene based donor material

      SciTech Connect (OSTI)

      Meerheim, Rico Krner, Christian; Leo, Karl

      2014-08-11

      The efficiency of organic solar cells can be increased by serial stacked subcells even upon using the same absorber material. For the multi-junction devices presented here, we use the small molecule donor material DCV5T-Me. The subcell currents were matched by optical transfer matrix simulation, allowing an efficiency increase from 8.3% for a single junction up to 9.7% for a triple junction cell. The external quantum efficiency of the subcells, measured under appropriate light bias illumination, is spectrally shifted due to the microcavity of the complete stack, resulting in a broadband response and an increased cell current. The increase of the power conversion efficiency upon device stacking is even stronger for large area cells due to higher influence of the resistance of the indium tin oxide anode, emphasizing the advantage of multi-junction devices for large-area applications.

    11. AmeriFlux US-Bn2 Bonanza Creek, 1987 Burn site near Delta Junction

      DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

      Randerson, James [University of California, Irvine

      2016-01-01

      This is the AmeriFlux version of the carbon flux data for the site US-Bn2 Bonanza Creek, 1987 Burn site near Delta Junction. Site Description - The Delta Junction 1987 Burn site is located near Delta Junction, just to the north of the Alaska Range in interior Alaska. All three Delta Junction sites are within a 15-km radius of one another. Composed of a combination of alluvial outwashes, floodplains, and low terraces dissected by glacial streams originating in the nearby Alaska Range. The Granite Creek fire burned ~20,000 ha of black spruce (Picea mariana) during 1987. Approximately half of the dead boles remained upright in 2004, while the other half had fallen over or had become entangled with other boles.

    12. AmeriFlux US-Bn3 Bonanza Creek, 1999 Burn site near Delta Junction

      DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

      Randerson, James [University of California, Irvine

      2016-01-01

      This is the AmeriFlux version of the carbon flux data for the site US-Bn3 Bonanza Creek, 1999 Burn site near Delta Junction. Site Description - The Delta Junction 1999 Burn site is located near Delta Junction, just to the north of the Alaska Range in interior Alaska. All three Delta Junction sites are within a 15-km radius of one another. Composed of a combination of alluvial outwashes, floodplains, and low terraces dissected by glacial streams originating in the nearby Alaska Range. The Donnelly Flats fire burned ~7,600 ha of black spruce (Picea mariana) during June 1999. The boles of the black spruce remained standing 3 years after the fire. 70% of the surface was not covered by vascular plants.

    13. Low-bias negative differential resistance effect in armchair graphene nanoribbon junctions

      SciTech Connect (OSTI)

      Li, Suchun; Gan, Chee Kwan; Son, Young-Woo; Feng, Yuan Ping; Quek, Su Ying

      2015-01-05

      Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, we can obtain a negative differential resistance (NDR) effect. Owing to the intrinsic properties of the AGNR junctions, the on-set bias reaches as low as ∼0.2 V and the valley current almost vanishes. We further show that such NDR effect is robust against details of the atomic structure of the junction, substrate, and whether the junction is made by etching or by hydrogenation.

    14. Preservationists Tour Historic Log Cabin at the Grand Junction, Colorado, Office

      Office of Energy Efficiency and Renewable Energy (EERE)

      A working committee of local historic preservation specialists held their monthly meeting at the U.S. Department of Energy Office of Legacy Management (LM) Grand Junction, Colorado, Office on...

    15. Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park Dedication and Open House

      Broader source: Energy.gov [DOE]

      The U.S. Department of Energy (DOE) Office of Legacy Management (LM) held an open house and park dedication at the Grand Junction, Colorado, Office to commemorate its place in the Manhattan Project...

    16. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

      DOE Patents [OSTI]

      Wanlass, Mark W.

      1994-01-01

      A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

    17. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

      SciTech Connect (OSTI)

      Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

      2006-01-01

      We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

    18. Quantum interference in thermoelectric molecular junctions: A toy model perspective

      SciTech Connect (OSTI)

      Nozaki, Daijiro E-mail: research@nano.tu-dresden.de; Avdoshenko, Stas M.; Sevinçli, Hâldun; Cuniberti, Gianaurelio

      2014-08-21

      Quantum interference (QI) phenomena between electronic states in molecular circuits offer a new opportunity to design new types of molecular devices such as molecular sensors, interferometers, and thermoelectric devices. Controlling the QI effect is a key challenge for such applications. For the development of single molecular devices employing QI effects, a systematic study of the relationship between electronic structure and the quantum interference is needed. In order to uncover the essential topological requirements for the appearance of QI effects and the relationship between the QI-affected line shape of the transmission spectra and the electronic structures, we consider a homogeneous toy model where all on-site energies are identical and model four types of molecular junctions due to their topological connectivities. We systematically analyze their transmission spectra, density of states, and thermoelectric properties. Even without the degree of freedom for on-site energies an asymmetric Fano peak could be realized in the homogeneous systems with the cyclic configuration. We also calculate the thermoelectric properties of the model systems with and without fluctuation of on-site energies. Even under the fluctuation of the on-site energies, the finite thermoelectrics are preserved for the Fano resonance, thus cyclic configuration is promising for thermoelectric applications. This result also suggests the possibility to detect the cyclic configuration in the homogeneous systems and the presence of the QI features from thermoelectric measurements.

    19. Electron transport in molecular junctions with graphene as protecting layer

      SciTech Connect (OSTI)

      Hüser, Falco; Solomon, Gemma C.

      2015-12-07

      We present ab initio transport calculations for molecular junctions that include graphene as a protecting layer between a single molecule and gold electrodes. This vertical setup has recently gained significant interest in experiment for the design of particularly stable and reproducible devices. We observe that the signals from the molecule in the electronic transmission are overlayed by the signatures of the graphene sheet, thus raising the need for a reinterpretation of the transmission. On the other hand, we see that our results are stable with respect to various defects in the graphene. For weakly physiosorbed molecules, no signs of interaction with the graphene are evident, so the transport properties are determined by offresonant tunnelling between the gold leads across an extended structure that includes the molecule itself and the additional graphene layer. Compared with pure gold electrodes, calculated conductances are about one order of magnitude lower due to the increased tunnelling distance. Relative differences upon changing the end group and the length of the molecule on the other hand, are similar.

    20. Computational Fluid Dynamics Analysis of Flexible Duct Junction Box Design

      SciTech Connect (OSTI)

      Beach, Robert; Prahl, Duncan; Lange, Rich

      2013-12-01

      IBACOS explored the relationships between pressure and physical configurations of flexible duct junction boxes by using computational fluid dynamics (CFD) simulations to predict individual box parameters and total system pressure, thereby ensuring improved HVAC performance. Current Air Conditioning Contractors of America (ACCA) guidance (Group 11, Appendix 3, ACCA Manual D, Rutkowski 2009) allows for unconstrained variation in the number of takeoffs, box sizes, and takeoff locations. The only variables currently used in selecting an equivalent length (EL) are velocity of air in the duct and friction rate, given the first takeoff is located at least twice its diameter away from the inlet. This condition does not account for other factors impacting pressure loss across these types of fittings. For each simulation, the IBACOS team converted pressure loss within a box to an EL to compare variation in ACCA Manual D guidance to the simulated variation. IBACOS chose cases to represent flows reasonably correlating to flows typically encountered in the field and analyzed differences in total pressure due to increases in number and location of takeoffs, box dimensions, and velocity of air, and whether an entrance fitting is included. The team also calculated additional balancing losses for all cases due to discrepancies between intended outlet flows and natural flow splits created by the fitting. In certain asymmetrical cases, the balancing losses were significantly higher than symmetrical cases where the natural splits were close to the targets. Thus, IBACOS has shown additional design constraints that can ensure better system performance.

    1. Spin Josephson effect in topological superconductor-ferromagnet junction

      SciTech Connect (OSTI)

      Ren, C. D.; Wang, J.

      2014-03-21

      The composite topological superconductor (TS), made of one-dimensional spin-orbit coupled nanowire with proximity-induced s-wave superconductivity, is not a pure p-wave superconductor but still has a suppressed s-wave pairing. We propose to probe the spin texture of the p-wave pairing in this composite TS by examining possible spin supercurrents in an unbiased TS/ferromagnet junction. It is found that both the exchange-coupling induced and spin-flip reflection induced spin currents exist in the setup and survive even in the topological phase. We showed that besides the nontrivial p-wave pairing state accounting for Majorana Fermions, there shall be a trivial p-wave pairing state that contributes to spin supercurrent. The trivial p-wave pairing state is diagnosed from the mixing effect between the suppressed s-wave pairing and the topologically nontrivial p-wave pairing. The d vector of the TS is proved not to be rigorously perpendicular to the spin projection of p-wave pairings. Our findings are also confirmed by the Kitaev's p-wave model with a nonzero s-wave pairing.

    2. Electron transfer statistics and thermal fluctuations in molecular junctions

      SciTech Connect (OSTI)

      Goswami, Himangshu Prabal; Harbola, Upendra

      2015-02-28

      We derive analytical expressions for probability distribution function (PDF) for electron transport in a simple model of quantum junction in presence of thermal fluctuations. Our approach is based on the large deviation theory combined with the generating function method. For large number of electrons transferred, the PDF is found to decay exponentially in the tails with different rates due to applied bias. This asymmetry in the PDF is related to the fluctuation theorem. Statistics of fluctuations are analyzed in terms of the Fano factor. Thermal fluctuations play a quantitative role in determining the statistics of electron transfer; they tend to suppress the average current while enhancing the fluctuations in particle transfer. This gives rise to both bunching and antibunching phenomena as determined by the Fano factor. The thermal fluctuations and shot noise compete with each other and determine the net (effective) statistics of particle transfer. Exact analytical expression is obtained for delay time distribution. The optimal values of the delay time between successive electron transfers can be lowered below the corresponding shot noise values by tuning the thermal effects.

    3. Hydrogenated amorphous silicon barriers for niobium-niobium Josephson junctions

      SciTech Connect (OSTI)

      Kroger, H.; Aucoin, R.; Currier, L.W.; Jillie, D.W.; Potter, C.N.; Shaw, D.W.; Smith, L.N.; Thaxter, J.B.; Willis, P.H.

      1985-03-01

      The authors report on further studies of the effects of hydrogenation of sputtered amorphous silicon barriers upon the current-voltage (I-V) characteristics of Nb-Nb Josephson tunnel junctions. For composite trilayer barriers (a-Si/a-Si:H/a-Si) which are deposited using 8 mT of Ar, we find that there is an abrupt improvement in device characteristics when the central hydrogenated layer is deposited using a hydrogen partial pressure which exceeds about 0.5 mT. They attribute this to the reduction in the density of localized states in the a-Si:H layer. We have observed excellent I-V characteristics with trilayer barrier devices whose central hydrogenated layer is only about 1/7 of the thickness of the entire barrier. This observation suggests that localized states near the geometric center of the barrier are the most significant in degrading device characteristics. Annealing experiments and published data on the diffusion of deuterium in a-Si suggest that the composite barriers will be extremely stable during processing and storage. Zero bias anomalies in device I-V characteristics and spin density in the a-Si and a-Si:H layers have been measured.

    4. Method and apparatus for reducing sample dispersion in turns and junctions of microchannel systems

      DOE Patents [OSTI]

      Griffiths, Stewart K.; Nilson, Robert H.

      2001-01-01

      The performance of microchannel devices is improved by providing turns, wyes, tees, and other junctions that produce little dispersions of a sample as it traverses the turn or junction. The reduced dispersion results from contraction and expansion regions that reduce the cross-sectional area over some portion of the turn or junction. By carefully designing the geometries of these regions, sample dispersion in turns and junctions is reduced to levels comparable to the effects of ordinary diffusion. A numerical algorithm was employed to evolve low-dispersion geometries by computing the electric or pressure field within candidate configurations, sample transport through the turn or junction, and the overall effective dispersion. These devices should greatly increase flexibility in the design of microchannel devices by permitting the use of turns and junctions that do not induce large sample dispersion. In particular, the ability to fold electrophoretic and electrochrornatographic separation columns will allow dramatic improvements in the miniaturization of these devices. The low-lispersion devices are particularly suited to electrochromatographic and electrophoretic separations, as well as pressure-driven chromatographic separation. They are further applicable to microfluidic systems employing either electroosrnotic or pressure-driven flows for sample transport, reaction, mixing, dilution or synthesis.

    5. Structure–property relationships in atomic-scale junctions: Histograms and beyond

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Mark S. Hybertsen; Venkataraman, Latha

      2016-03-03

      Over the past 10 years, there has been tremendous progress in the measurement, modeling and understanding of structure–function relationships in single molecule junctions. Numerous research groups have addressed significant scientific questions, directed both to conductance phenomena at the single molecule level and to the fundamental chemistry that controls junction functionality. Many different functionalities have been demonstrated, including single-molecule diodes, optically and mechanically activated switches, and, significantly, physical phenomena with no classical analogues, such as those based on quantum interference effects. Experimental techniques for reliable and reproducible single molecule junction formation and characterization have led to this progress. In particular, themore » scanning tunneling microscope based break-junction (STM-BJ) technique has enabled rapid, sequential measurement of large numbers of nanoscale junctions allowing a statistical analysis to readily distinguish reproducible characteristics. Furthermore, harnessing fundamental link chemistry has provided the necessary chemical control over junction formation, enabling measurements that revealed clear relationships between molecular structure and conductance characteristics.« less

    6. High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

      DOE Patents [OSTI]

      Ginley, David S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.; Martens, Jon S.; Plut, Thomas A.; Tigges, Chris P.; Vawter, Gregory A.; Zipperian, Thomas E.

      1994-10-25

      A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

    7. High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

      DOE Patents [OSTI]

      Ginley, D.S.; Hietala, V.M.; Hohenwarter, G.K.G.; Martens, J.S.; Plut, T.A.; Tigges, C.P.; Vawter, G.A.; Zipperian, T.E.

      1994-10-25

      A process is disclosed for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO[sub 3] crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O[sub 3], followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry. 8 figs.

    8. Calculation of axial charge spreading in carbon nanotubes and nanotube Y junctions during STM measurement

      SciTech Connect (OSTI)

      Mark, Geza I.; Biro, Laszlo P.; Lambin, Philippe

      2004-09-15

      Distribution of the probability current and the probability density of wave packets was calculated for nanotubes and nanotube Y junctions by solving the three dimensional time-dependent Schroedinger equation for a jellium potential model of the scanning tunneling microscope (STM) tip-nanotube-support system. Four systems were investigated: an infinite single wall nanotube (SWNT) as reference case, a capped SWNT protruding a step of the support surface, a quantum dot (finite tube without support), and a SWNT Y junction. It is found that the spatial distribution of the probability current flowing into the sample is decided by the electron probability density of the tube and by the oscillation in time of the probability current, which in turn is governed by the quasibound states on the tube. For the infinite tube the width of the axial spreading of the wave packet during tunneling is about 5 nm. When the STM tip is above that part of the tube which protrudes from the atomic scale step of the support surface it is found that the current flows ballistically along the tube and the total transmission is the same as for the infinite tube. In the case of quantum dot, however, the finite tube is first charged in a short time then it is discharged very slowly through the tip-nanotube tunnel junction. In the Y junction both the above the junction and off the junction tip positions were investigated. For a 1.2 nm displacement of the tip from the junction the wave packet still 'samples' the junction point which means that in STM and scanning tunneling spectroscopy experiments the signature of the junction should be still present for such tip displacement. For all tunneling situations analyzed the tunnel current is mainly determined by the tip-nanotube junction owing to its large resistance. The tunneling event through the STM model is characterized by two time scales, the nanotube is quickly 'charged' with the wave packet coming from the tip then this 'charge' flows into the

    9. Environmental monitoring report on the US Department of Energy's Grand Junction Projects Office facility, Grand Junction, Colorado, for calendar year 1987

      SciTech Connect (OSTI)

      Not Available

      1988-05-01

      This report presents results of environmental monitoring activities conducted in 1987 at the US Department of Energy's (DOE) Grand Junction Projects Office (GJPO) Facility in Colorado. The site is included under the DOE's Defense Decontamination and Decommissioning (Defense D and D) Program.

    10. Detection of alpha particles using DNA/Al Schottky junctions

      SciTech Connect (OSTI)

      Al-Ta'ii, Hassan Maktuff Jaber E-mail: vengadeshp@um.edu.my; Periasamy, Vengadesh E-mail: vengadeshp@um.edu.my; Amin, Yusoff Mohd

      2015-09-21

      Deoxyribonucleic acid or DNA can be utilized in an organic-metallic rectifying structure to detect radiation, especially alpha particles. This has become much more important in recent years due to crucial environmental detection needs in both peace and war. In this work, we fabricated an aluminum (Al)/DNA/Al structure and generated current–voltage characteristics upon exposure to alpha radiation. Two models were utilized to investigate these current profiles; the standard conventional thermionic emission model and Cheung and Cheung's method. Using these models, the barrier height, Richardson constant, ideality factor and series resistance of the metal-DNA-metal structure were analyzed in real time. The barrier height, Φ value calculated using the conventional method for non-radiated structure was 0.7149 eV, increasing to 0.7367 eV after 4 min of radiation. Barrier height values were observed to increase after 20, 30 and 40 min of radiation, except for 6, 8, and 10 min, which registered a decrease of about 0.67 eV. This was in comparison using Cheung and Cheung's method, which registered 0.6983 eV and 0.7528 eV for the non-radiated and 2 min of radiation, respectively. The barrier height values, meanwhile, were observed to decrease after 4 (0.61 eV) to 40 min (0.6945 eV). The study shows that conventional thermionic emission model could be practically utilized for estimating the diode parameters including the effect of series resistance. These changes in the electronic properties of the Al/DNA/Al junctions could therefore be utilized in the manufacture of sensitive alpha particle sensors.

    11. Analysis of a four lamp flash system for calibrating multi-junction solar cells under concentrated light

      SciTech Connect (OSTI)

      Schachtner, Michael Prado, Marcelo Loyo; Reichmuth, S. Kasimir; Siefer, Gerald; Bett, Andreas W.

      2015-09-28

      It has been known for a long time that the precise characterization of multi-junction solar cells demands spectrally tunable solar simulators. The calibration of innovative multi-junction solar cells for CPV applications now requires tunable solar simulators which provide high irradiation levels. This paper describes the commissioning and calibration of a flash-based four-lamp simulator to be used for the measurement of multi-junction solar cells with up to four subcells under concentrated light.

    12. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

      SciTech Connect (OSTI)

      Gessert, T. A.

      2010-09-01

      Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

    13. Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction

      SciTech Connect (OSTI)

      Zide, J.M.O.; Kleiman-Shwarsctein, A.; Strandwitz, N.C.; Zimmerman, J.D.; Steenblock-Smith, T.; Gossard, A.C.; Forman, A.; Ivanovskaya, A.; Stucky, G.D.

      2006-04-17

      We report the molecular beam epitaxy growth of Al{sub 0.3}Ga{sub 0.7}As/GaAs multijunction solar cells with epitaxial, semimetallic ErAs nanoparticles at the interface of the tunnel junction. The states provided by these nanoparticles reduce the bias required to pass current through the tunnel junction by three orders of magnitude, and therefore drastically reduce the voltage losses in the tunnel junction. We have measured open-circuit voltages which are 97% of the sum of the constituent cells, which result in nearly double the efficiency of our multijunction cell with a conventional tunnel junction.

    14. Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery

      DOE Patents [OSTI]

      Hanak, Joseph J.

      1981-01-01

      A method of fabricating series-connected and tandem junction series-connected solar cells into a solar battery with laser scribing.

    15. Photocurrent spectroscopy of exciton and free particle optical transitions in suspended carbon nanotube pn-junctions

      SciTech Connect (OSTI)

      Chang, Shun-Wen; Theiss, Jesse; Hazra, Jubin; Aykol, Mehmet; Kapadia, Rehan; Cronin, Stephen B.

      2015-08-03

      We study photocurrent generation in individual, suspended carbon nanotube pn-junction diodes formed by electrostatic doping using two gate electrodes. Photocurrent spectra collected under various electrostatic doping concentrations reveal distinctive behaviors for free particle optical transitions and excitonic transitions. In particular, the photocurrent generated by excitonic transitions exhibits a strong gate doping dependence, while that of the free particle transitions is gate independent. Here, the built-in potential of the pn-junction is required to separate the strongly bound electron-hole pairs of the excitons, while free particle excitations do not require this field-assisted charge separation. We observe a sharp, well defined E{sub 11} free particle interband transition in contrast with previous photocurrent studies. Several steps are taken to ensure that the active charge separating region of these pn-junctions is suspended off the substrate in a suspended region that is substantially longer than the exciton diffusion length and, therefore, the photocurrent does not originate from a Schottky junction. We present a detailed model of the built-in fields in these pn-junctions, which, together with phonon-assistant exciton dissociation, predicts photocurrents on the same order of those observed experimentally.

    16. E-cadherin junction formation involves an active kinetic nucleation process

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng -han; Harrison, Oliver J.; Song, Hang; Smith, Adam W.; Huang, William Y. C.; Lin, Wan -Chen; Guo, Zhenhuan; Padmanabhan, Anup; et al

      2015-08-19

      Epithelial (E)-cadherin-mediated cell–cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest thatmore » the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role.« less

    17. E-cadherin junction formation involves an active kinetic nucleation process

      SciTech Connect (OSTI)

      Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng -han; Harrison, Oliver J.; Song, Hang; Smith, Adam W.; Huang, William Y. C.; Lin, Wan -Chen; Guo, Zhenhuan; Padmanabhan, Anup; Troyanovsky, Sergey M.; Dustin, Michael L.; Shapiro, Lawrence; Honig, Barry; Zaidel-Bar, Ronen; Groves, Jay T.

      2015-08-19

      Epithelial (E)-cadherin-mediated cell–cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest that the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role.

    18. Giant magnetoresistance modulated by magnetic field in graphene p-n junction

      SciTech Connect (OSTI)

      Li, Yuan; Jalil, Mansoor B. A.; Zhou, Guanghui

      2014-11-10

      We investigate the tunneling transport across a graphene p-n junction under the influence of a perpendicular magnetic field (B field). We observe a sideway deflection of the transmission profile, which can be quantitatively explained by invoking the classical Lorentz force. By considering the trajectory of the Dirac fermions along their cyclotron orbits, we analytically derive the incident angles for transmission across the graphene junction under a B field, as well as the critical magnetic field for full suppression of tunneling across the junction. These analytical predictions are consistent with the numerical results obtained via the non-equilibrium Green's function method. A stronger B-field conductance modulation is obtained for a p-n as opposed to an n-n or p-p type graphene junction. The magnetic field also induces a forbidden region of almost zero transmission for electron energy close to the Dirac point, which can be utilized to achieve a giant magnetoresistance effect. Based on our analysis, we devise an optimal magneto-electrical transport modulation, which can potentially realize a giant magnetoresistance effect in graphene p-n junction systems.

    19. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

      SciTech Connect (OSTI)

      Werner, R.; Kleiner, R.; Koelle, D.; Petrov, A. Yu.; Davidson, B. A.; Mino, L. Alvarez

      2011-04-18

      We report resistance versus magnetic field measurements for a La{sub 0.65}Sr{sub 0.35}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.65}Sr{sub 0.35}MnO{sub 3} tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches {approx}1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

    20. UMTRA Project water sampling and analysis plan, Grand Junction, Colorado. Revision 1, Version 6

      SciTech Connect (OSTI)

      1995-09-01

      This water sampling and analysis plan describes the planned, routine ground water sampling activities at the Grand Junction US DOE Uranium Mill Tailings Remedial Action (UMTRA) Project site (GRJ-01) in Grand Junction, Colorado, and at the Cheney Disposal Site (GRJ-03) near Grand Junction. The plan identifies and justifies the sampling locations, analytical parameters, detection limits, and sampling frequencies for the routine monitoring stations at the sites. Regulatory basis is in the US EPA regulations in 40 CFR Part 192 (1994) and EPA ground water quality standards of 1995 (60 FR 2854). This plan summarizes results of past water sampling activities, details water sampling activities planned for the next 2 years, and projects sampling activities for the next 5 years.

    1. A versatile optical junction using photonic band-gap guidance and self collimation

      SciTech Connect (OSTI)

      Gupta, Man Mohan; Medhekar, Sarang

      2014-09-29

      We show that it is possible to design two photonic crystal (PC) structures such that an optical beam of desired wavelength gets guided within the line defect of the first structure (photonic band gap guidance) and the same beam gets guided in the second structure by self-collimation. Using two dimensional simulation of a design made of the combination of these two structures, we propose an optical junction that allows for crossing of two optical signals of same wavelength and same polarization with very low crosstalk. Moreover, the junction can be operated at number of frequencies in a wide range. Crossing of multiple beams with very low cross talk is also possible. The proposed junction should be important in future integrated photonic circuits.

    2. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

      SciTech Connect (OSTI)

      Vinokurov, D. A.; Ladugin, M. A.; Lyutetskii, A. V.; Marmalyuk, A. A.; Petrunov, A. N.; Pikhtin, N. A.; Slipchenko, S. O. Sokolova, Z. N.; Stankevich, A. L.; Fetisova, N. V.; Shashkin, I. S.; Averkiev, N. S.; Tarasov, I. S.

      2010-06-15

      Epitaxially stacked tunnel-junction laser hetero structures were grown by hydride metalorganic vapor-phase epitaxy in the system of AlGaAs/GaAs/In GaAs alloys. Based on such structures, mesa stripe lasers with an aperture of 150 s- 7 m were fabricated. The possibility of controlling the lasing wavelength by varying the active region thickness in each tunnel-junction laser structure was demonstrated. Independent two-band lasing at wavelengths of 914 and 925 nm (the difference frequency is 2.3 THz) was achieved at a maximum optical radiation power of 20 W in each band of the epitaxially stacked tunnel-junction semiconductor laser.

    3. Sputtered a-silicon tunneling barriers for Nb-Nb Josephson junctions

      SciTech Connect (OSTI)

      Smith, L.N.; Jillie, D.W.; Kroger, H.; Thaxter, J.B.

      1982-11-01

      The authors have developed an IC-compatible process for fabricating Josephson tunnel junctions, which uses dc magnetron-sputtered Nb films as both base and counterelectrodes, and rf-sputtered amorphous silicon as the tunneling barrier. Optical reflectivity measurements have been used to study the silicon barrier, and to allow precise determination of the barrier thickness. The Josephson current density varies exponentially -over several orders of magnitude -- with the barrier thickness. The product of the critical current and subgap resistance V /SUB m/ is constant over this wide range of current density. The specific capacitance of these junctions is about 2.5 ..mu..f/cm/sup 2/ at a current density of a few hundred A/cm/sup 2/. This is lower than the value for lead-alloy junctions, about 4.3 ..mu..f/cm/sup 2/, and is consistent with the measured thickness and dielectric constant of the a-Si barrier.

    4. US Department of Energy Grand Junction Projects Office Remedial Action Project, final report of the decontamination and decommissioning of Building 36 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Widdop, M.R.

      1996-08-01

      The U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJPO Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, also is the remedial action contractor. Building 36 was found to be radiologically contaminated and was demolished in 1996. The soil beneath the building was remediated in accordance with identified standards and can be released for unlimited exposure and unrestricted use. This document was prepared in response to a DOE request for an individual final report for each contaminated GJPO building.

    5. NREL, CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell

      SciTech Connect (OSTI)

      2016-01-01

      Scientists set a new world record for converting non-concentrated sunlight into electricity using a dual-junction III-V/Si solar cell. National Renewable Energy Laboratory (NREL) and Swiss Center for Electronics and Microtechnology (CSEM) scientists have collaborated to create a novel tandem solar cell that operates at 29.8% conversion efficiency under non-concentrator (1-sun) conditions. In comparison, the 1-sun efficiency of a silicon (Si) single-junction solar cell is probably still a few years away from converging on its practical limit of about 26%.

    6. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

      DOE Patents [OSTI]

      Wanlass, M.W.

      1994-12-27

      A single-junction solar cell is described having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of ''pinning'' the optimum band gap for a wide range of operating conditions at a value of 1.14[+-]0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap. 7 figures.

    7. Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

      DOE Patents [OSTI]

      Hawkins, G.A.; Clarke, J.

      1975-10-31

      A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

    8. Light-splitting photovoltaic system utilizing two dual-junction solar cells

      SciTech Connect (OSTI)

      Xiong, Kanglin; Yang, Hui; Lu, Shulong; Dong, Jianrong; Zhou, Taofei; Wang, Rongxin; Jiang, Desheng

      2010-12-15

      There are many difficulties limiting the further development of monolithic multi-junction solar cells, such as the growth of lattice-mismatched material and the current matching constraint. As an alternative approach, the light-splitting photovoltaic system is investigated intensively in different aspects, including the energy loss mechanism and the choice of energy bandgaps of solar cells. Based on the investigation, a two-dual junction system has been implemented employing lattice-matched GaInP/GaAs and InGaAsP/InGaAs cells grown epitaxially on GaAs and InP substrates, respectively. (author)

    9. Evaluation of power production from the solar electric generating systems at Kramer Junction: 1988 to 1993

      SciTech Connect (OSTI)

      Kolb, G.J.

      1994-12-31

      The five Solar Electric Generating Systems (SEGS) at Kramer Junction, California, now have nearly 30 years of cumulative operating experience. These 30 MW plants employ parabolic trough technology originally deployed by LUZ International in the late 1980`s and are now managed, operated and maintained by the Kramer Junction Company. In this paper, Sandia National Laboratories performed an analysis of the annual energy production from the five plants. Annual solar-to-electric conversion efficiencies are calculated and the major factors that influenced the results are presented. The generally good efficiencies are primarily attributed to the excellent equipment availabilities achieved at all plants.

    10. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

      SciTech Connect (OSTI)

      Yap, Yoke Khin

      2013-03-14

      Hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) are expected to have appealing new properties that are not available from pure BNNTs and CNTs. Theoretical studies indicate that BNNT/CNT junctions could be multifunctional and applicable as memory, spintronic, electronic, and photonics devices with tunable band structures. This will lead to energy and material efficient multifunctional devices that will be beneficial to the society. However, experimental realization of BNNT/CNT junctions was hindered by the absent of a common growth technique for BNNTs and CNTs. In fact, the synthesis of BNNTs was very challenging and may involve high temperatures (up to 3000 degree Celsius by laser ablation) and explosive chemicals. During the award period, we have successfully developed a simple chemical vapor deposition (CVD) technique to grow BNNTs at 1100-1200 degree Celsius without using dangerous chemicals. A series of common catalyst have then been identified for the synthesis of BNNTs and CNTs. Both of these breakthroughs have led to our preliminary success in growing two types of BNNT/CNT junctions and two additional new nanostructures: 1) branching BNNT/CNT junctions and 2) co-axial BNNT/CNT junctions, 3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNT/graphene junctions. We have started to understand their structural, compositional, and electronic properties. Latest results indicate that the branching BNNT/CNT junctions and QDs-BNNTs are functional as room-temperature tunneling devices. We have submitted the application of a renewal grant to continue the study of these new energy efficient materials. Finally, this project has also strengthened our collaborations with multiple Department of Energy’s Nanoscale Science Research Centers (NSRCs), including the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory, and the Center for Integrated Nanotechnologies (CINTs) at Sandia National Laboratories

    11. A Monolithic Interconnected module with a tunnel Junction for Enhanced Electrical and Optical Performance

      SciTech Connect (OSTI)

      Murray, Christopher Sean; Wilt, David Morgan

      1999-06-30

      An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMs), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

    12. McMillan-Rowell Like Oscillations in a Superconductor-InAs/GaSb-Superconductor Junction

      SciTech Connect (OSTI)

      Shi, Xiaoyan; Yu, Wenlong; Hawkins, Samuel D.; Klem, John F.; Pan, Wei

      2015-08-04

      We fabricated a superconductor (Ta)-InAs/GaSb bilayer-superconductor (Ta) junction device that has a long mean free path and can preserve the wavelike properties of particles (electrons and holes) inside the junction. Differential conductance measurements were also carried out at low temperatures in this device, and McMillan-Rowell like oscillations (MROs) were observed. A much larger Fermi velocity, compared to that from Shubnikov-de Haas oscillations, was obtained from the frequency of MROs. Possible mechanisms are discussed for this discrepancy.

    13. Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

      DOE Patents [OSTI]

      Murray, Christopher S.; Wilt, David M.

      2000-01-01

      An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

    14. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

      DOE Patents [OSTI]

      Sopori, Bhushan; Rangappan, Anikara

      2014-11-25

      Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

    15. Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

      SciTech Connect (OSTI)

      Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

      2012-06-01

      We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. We found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several μm were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.

    16. In situ Formation of Highly Conducting Covalent Au-C Contacts for Single-Molecule Junctions

      SciTech Connect (OSTI)

      Cheng, Z.L.; Hybertsen, M.; Skouta, R.; Vazquez, H.; Widawsky, J.R.; Schneebeli, S.; Chen, W.; Breslow, R.; Venkataraman, L.

      2011-06-01

      Charge transport across metal-molecule interfaces has an important role in organic electronics. Typically, chemical link groups such as thiols or amines are used to bind organic molecules to metal electrodes in single-molecule circuits, with these groups controlling both the physical structure and the electronic coupling at the interface. Direct metal-carbon coupling has been shown through C60, benzene and {pi}-stacked benzene but ideally the carbon backbone of the molecule should be covalently bonded to the electrode without intervening link groups. Here, we demonstrate a method to create junctions with such contacts. Trimethyl tin (SnMe{sub 3})-terminated polymethylene chains are used to form single-molecule junctions with a break-junction technique. Gold atoms at the electrode displace the SnMe{sub 3} linkers, leading to the formation of direct Au-C bonded single-molecule junctions with a conductance that is {approx}100 times larger than analogous alkanes with most other terminations. The conductance of these Au-C bonded alkanes decreases exponentially with molecular length, with a decay constant of 0.97 per methylene, consistent with a non-resonant transport mechanism. Control experiments and ab initio calculations show that high conductances are achieved because a covalent Au-C sigma ({sigma}) bond is formed. This offers a new method for making reproducible and highly conducting metal-organic contacts.

    17. Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint

      SciTech Connect (OSTI)

      Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q.; Branz, H. M.; Meier, D. L.

      2008-05-01

      We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer.

    18. Tuning electron transport through a single molecular junction by bridge modification

      SciTech Connect (OSTI)

      Li, Xiao-Fei Qiu, Qi; Luo, Yi

      2014-07-07

      The possibility of controlling electron transport in a single molecular junction represents the ultimate goal of molecular electronics. Here, we report that the modification of bridging group makes it possible to improve the performance and obtain new functions in a single cross-conjugated molecular junction, designed from a recently synthesized bipolar molecule bithiophene naphthalene diimide. Our first principles results show that the bipolar characteristic remains after the molecule was modified and sandwiched between two metal electrodes. Rectifying is the intrinsic characteristic of the molecular junction and its performance can be enhanced by replacing the saturated bridging group with an unsaturated group. A further improvement of the rectifying and a robust negative differential resistance (NDR) behavior can be achieved by the modification of unsaturated bridge. It is revealed that the modification can induce a deviation angle about 4° between the donor and the acceptor π-conjugations, making it possible to enhance the communication between the two π systems. Meanwhile, the low energy frontier orbitals of the junction can move close to the Fermi level and encounter in energy at certain biases, thus a transport channel with a considerable transmission can be formed near the Fermi level only at a narrow bias regime, resulting in the improvement of rectifying and the robust NDR behavior. This finding could be useful for the design of single molecular devices.

    19. Rapid, Enhanced IV Characterization of Multi-Junction PV Devices under One Sun at NREL

      SciTech Connect (OSTI)

      Moriarty, Tom; France, Ryan; Steiner, Myles

      2015-06-14

      Multi-junction technology is rapidly advancing, which puts increasing demands on IV characterization resources. We report on a tool and procedure for fast turn-around of IV data under the reference conditions, but also under controlled variations from the reference conditions. This enhanced data set can improve further iterations of device optimization.

    20. Rapid, Enhanced IV Characterization of Multi-Junction PV Devices under One Sun at NREL: Preprint

      SciTech Connect (OSTI)

      Moriarty, Tom; France, Ryan; Steiner, Myles

      2015-09-15

      Multi-junction technology is rapidly advancing, which puts increasing demands on IV characterization resources. We report on a tool and procedure for fast turn-around of IV data under the reference conditions, but also under controlled variations from the reference conditions. This enhanced data set can improve further iterations of device optimization.

    1. Site observational work plan for the UMTRA Project Site at Grand Junction, Colorado

      SciTech Connect (OSTI)

      1996-03-01

      The U.S. Department of Energy (DOE) has prepared this initial site observational work plan (SOWP) for the Uranium Mill Tailings Remedial Action (UMTRA) Project site in Grand Junction, Colorado. This SOWP is one of the first UMTRA Ground Water Project documents developed to select a compliance strategy that meets the UMTRA ground water standards (40 CFR Part 192, as amended by 60 FR 2854) for the Grand Junction site. This SOWP applies information about the Grand Junction site to the compliance strategy selection framework developed in the UMTRA Ground Water Project draft programmatic environmental impact statement (PEIS). This risk-based, decision-making framework identifies the decision logic for selecting compliance strategies that could be used to meet the ground water standards. The DOE goal is to use the observational method to implement a cost-effective site strategy that complies with the ground water standards and protects human health and the environment. Based on an evaluation of the site characterization and risk assessment data available for the preparation of this SOWP, DOE proposes that the most likely compliance strategy for the Grand Junction site is no remediation based on the application of supplemental standards. This proposed strategy is based on a conceptual site model that indicates site-related contamination is confined to a limited-use aquifer as defined in the ground water standards.

    2. Imaging the Solar Cell P-N Junction and Depletion Region Using Secondary Electron Contrast

      SciTech Connect (OSTI)

      Heath, J. T.; Jiang, C. S.; Al-Jassim, M. M.

      2011-01-01

      We report on secondary electron (SE) images of cross-sectioned multicrystalline Si and GaAs/GaInP solar cell devices, focusing on quantifying the relationship between the apparent n{sup +}-p contrast and characteristic electronic features of the device. These samples allow us to compare the SE signal from devices which have very different physical characteristics: differing materials, diffused junction versus abrupt junction, heterojunction versus homojunction. Despite these differences, we find that the SE image contrast for both types of sample, and as a function of reverse bias across the diode, closely agrees with PC1D simulations of the bulk electrostatic potential in the device, accurately yielding the depletion edge and width. A spatial derivative of the SE data shows a local maximum at the metallurgical junction. Such data are valuable, for example, in studying the conformity of a diffused junction to the textured surface topography. These data also extend our understanding of the origin of the SE contrast.

    3. Superconductive tunnel junction device with enhanced characteristics and method of manufacture

      SciTech Connect (OSTI)

      Kroger, H.; Jillie, D. W.

      1985-08-20

      A superconductive tunnel junction device comprises first and second superconductive electrodes with a barrier disposed therebetween where the first superconductive electrode and the barrier are formed without interruption in the same vacuum system pump down and with the first superconductive electrode subjected to sputter etching in an argon plasma before the deposition of the barrier for improving the characteristics of the device.

    4. The importance of Fe surface states for spintronic devices based on magnetic tunnel junctions

      SciTech Connect (OSTI)

      Chantis, Athanasios N

      2008-01-01

      In this article we give a review of our recent theoretical studies of the influence of Fe(001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs(001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.

    5. Electrical and photovoltaic characteristics of MoS{sub 2}/Si p-n junctions

      SciTech Connect (OSTI)

      Hao, Lanzhong Liu, Yunjie Gao, Wei; Han, Zhide; Xue, Qingzhong; Zeng, Huizhong; Wu, Zhipeng; Zhu, Jun; Zhang, Wanli

      2015-03-21

      Bulk-like molybdenum disulfide (MoS{sub 2}) thin films were deposited on the surface of p-type Si substrates using dc magnetron sputtering technique and MoS{sub 2}/Si p-n junctions were formed. The vibrating modes of E{sup 1}{sub 2g} and A{sub 1g} were observed from the Raman spectrum of the MoS{sub 2} films. The current density versus voltage (J-V) characteristics of the junction were investigated. A typical J-V rectifying effect with a turn-on voltage of 0.2 V was shown. In different voltage range, the electrical transporting of the junction was dominated by diffusion current and recombination current, respectively. Under the light illumination of 15 mW cm{sup −2}, the p-n junction exhibited obvious photovoltaic characteristics with a short-circuit current density of 3.2 mA cm{sup −2} and open-circuit voltage of 0.14 V. The fill factor and energy conversion efficiency were 42.4% and 1.3%, respectively. According to the determination of the Fermi-energy level (∼4.65 eV) and energy-band gap (∼1.45 eV) of the MoS{sub 2} films by capacitance-voltage curve and ultraviolet-visible transmission spectra, the mechanisms of the electrical and photovoltaic characteristics were discussed in terms of the energy-band structure of the MoS{sub 2}/Si p-n junctions. The results hold the promise for the integration of MoS{sub 2} thin films with commercially available Si-based electronics in high-efficient photovoltaic devices.

    6. TH-C-BRD-12: Robust Intensity Modulated Proton Therapy Plan Can Eliminate Junction Shifts for Craniospinal Irradiation

      SciTech Connect (OSTI)

      Liao, L; Jiang, S; Li, Y; Wang, X; Li, H; Zhu, X; Sahoo, N; Gillin, M; Mahajan, A; Grosshans, D; Zhang, X; Lim, G

      2014-06-15

      Purpose: The passive scattering proton therapy (PSPT) technique is the commonly used radiotherapy technique for craniospinal irradiation (CSI). However, PSPT involves many numbers of junction shifts applied over the course of treatment to reduce the cold and hot regions caused by field mismatching. In this work, we introduced a robust planning approach to develop an optimal and clinical efficient techniques for CSI using intensity modulated proton therapy (IMPT) so that junction shifts can essentially be eliminated. Methods: The intra-fractional uncertainty, in which two overlapping fields shift in the opposite directions along the craniospinal axis, are incorporated into the robust optimization algorithm. Treatment plans with junction sizes 3,5,10,15,20,25 cm were designed and compared with the plan designed using the non-robust optimization. Robustness of the plans were evaluated based on dose profiles along the craniospinal axis for the plans applying 3 mm intra-fractional shift. The dose intra-fraction variations (DIV) at the junction are used to evaluate the robustness of the plans. Results: The DIVs are 7.9%, 6.3%, 5.0%, 3.8%, 2.8% and 2.2%, for the robustly optimized plans with junction sizes 3,5,10,15,20,25 cm. The DIV are 10% for the non-robustly optimized plans with junction size 25 cm. The dose profiles along the craniospinal axis exhibit gradual and tapered dose distribution. Using DIVs less than 5% as maximum acceptable intrafractional variation, the overlapping region can be reduced to 10 cm, leading to potential reduced number of the fields. The DIVs are less than 5% for 5 mm intra-fractional shifts with junction size 25 cm, leading to potential no-junction-shift for CSI using IMPT. Conclusion: This work is the first report of the robust optimization on CSI based on IMPT. We demonstrate that robust optimization can lead to much efficient carniospinal irradiation by eliminating the junction shifts.

    7. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

      SciTech Connect (OSTI)

      Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

      2013-09-27

      AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

    8. Spin and charge transport in double-junction Fe/MgO/GaAs/MgO/Fe heterostructures

      SciTech Connect (OSTI)

      Wolski, S. Szczepa?ski, T.; Dugaev, V. K.; Barna?, J.; Landgraf, B.; Slobodskyy, T.; Hansen, W.

      2015-01-28

      We present theoretical and experimental results on tunneling current in single Fe/MgO/GaAs and double Fe/MgO/GaAs/MgO/Fe tunnel junctions. The charge and spin currents are calculated as a function of external voltage for different sets of parameters characterizing the semiconducting GaAs layer. Transport characteristics of a single Fe/MgO/GaAs junction reveal typical diode as well as spin diode features. The results of numerical calculations are compared with current-voltage characteristics measured experimentally for double tunnel junction structures, and a satisfactory agreement of the theoretical and experimental results has been achieved.

    9. Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n{sup +}-Si junctions

      SciTech Connect (OSTI)

      Saito, Y. Ishikawa, M.; Sugiyama, H.; Inokuchi, T.; Hamaya, K.; Tezuka, N.

      2015-05-07

      Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - t{sub MgO} plot (RA: resistance area product, t{sub MgO}: thickness of MgO tunnel barrier) in CoFe/MgO/n{sup +}-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization (P{sub Si}) in Si. The estimated absolute values of P{sub Si} using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. To demonstrate large spin accumulation in Si bulk band and enhance the local-MR through Si channel, these results indicate that the increase of the effective barrier height at ferromagnet/(tunnel barrier)/n{sup +}-Si junction electrode is important.

    10. US Department of Energy Grand Junction Projects Office Remedial Action Project. Final report of the decontamination and decommissioning of Building 52 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Krabacher, J.E.

      1996-08-01

      The U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJPO Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, also was the remedial action contractor. Building 52 was found to be radiologically contaminated and was demolished in 1994. The soil area within the footprint of the building has been remediated in accordance with the identified standards and the area can be released for unlimited exposure and unrestricted use. This document was prepared in response to a DOE request for an individual final report for each contaminated GJPO building.

    11. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

      SciTech Connect (OSTI)

      Manipatruni, Sasikanth Nikonov, Dmitri E.; Young, Ian A.

      2014-05-07

      Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects.

    12. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

      SciTech Connect (OSTI)

      Dhungana, Kamal B.; Pati, Ranjit

      2014-04-21

      Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy.

    13. Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer

      SciTech Connect (OSTI)

      Cuchet, La; Rodmacq, Bernard; Auffret, Stphane; Sousa, Ricardo C.; Prejbeanu, Ioan L.; Dieny, Bernard

      2015-06-21

      The magnetic properties of double tunnel junctions with perpendicular anisotropy were investigated. Two synthetic antiferromagnetic references are used, while the middle storage magnetic layer can be either a single ferromagnetic or a synthetic antiferromagnetic FeCoB-based layer, with a critical thickness as large as 3.0?nm. Among the different achievable magnetic configurations in zero field, those with either antiparallel references, and single ferromagnetic storage layer, or parallel references, and synthetic antiferromagnetic storage layer, are of particular interest since they allow increasing the efficiency of spin transfer torque writing and the thermal stability of the stored information as compared to single tunnel junctions. The latter configuration can be preferred when stray fields would favour a parallel orientation of the reference layers. In this case, the synthetic antiferromagnetic storage layer is also less sensitive to residual stray fields.

    14. Multiple junction cell characterization using the LBIC method : early results, issues, and pathways to improvement.

      SciTech Connect (OSTI)

      Finn, Jason R.; Granata, Jennifer E.; Hansen, Barry R.

      2010-03-01

      A light beam induced current (LBIC) measurement is a non-destructive technique that produces a spatial graphical representation of current response in photovoltaic cells with respect to position when stimulated by a light beam. Generally, a laser beam is used for these measurements because the spot size can be made very small, on the order of microns, and very precise measurements can be made. Sandia National Laboratories Photovoltaic System Evaluation Laboratory (PSEL) uses its LBIC measurement technique to characterize single junction mono-crystalline and multi-crystalline solar cells ranging from miniature to conventional sizes. Sandia has modified the already valuable LBIC technique to enable multi-junction PV cells to be characterized.

    15. Assessing thermal damage in silicon PN-junctions using Raman thermometry

      SciTech Connect (OSTI)

      Beechem, Thomas E.; Serrano, Justin R.; McDonald, Anthony; Mani, Seethambal

      2013-03-28

      Laser machining is frequently utilized in the manufacture of photovoltaics. A natural by-product of these fabrication processes, heat, not only serves as a means of material removal but also modifies the material in an extended region beyond that ideally intended for alteration. This modified region, termed the heat affected zone, is detrimental to performance and should therefore be minimized. While undoubtedly thermal in origin, it is unclear exactly how the thermal environment during laser machining correlates to changes in the PN-junction that reduce performance. In response, we combine in-situ Raman based thermometry measurements with post-event failure analysis to identify the physical mechanisms damaging the junction during laser machining. From this approach, damage is shown to initiate prior to melting and be driven primarily by the diffusion of dopants for fluences that do not induce ablation. Additionally, comparatively small regions of damage are shown to have a large impact on operation.

    16. Proximity induced vortices and long-range triplet supercurrents in ferromagnetic Josephson junctions and spin valves

      SciTech Connect (OSTI)

      Alidoust, Mohammad; Halterman, Klaus

      2015-03-28

      Using a spin-parameterized quasiclassical Keldysh-Usadel technique, we theoretically study supercurrent transport in several types of diffusive ferromagnetic (F)/superconducting (S) configurations with differing magnetization textures. We separate out the even- and odd-frequency components of the supercurrent within the low proximity limit and identify the relative contributions from the singlet and triplet channels. We first consider inhomogeneous one-dimensional Josephson structures consisting of a uniform bilayer magnetic S/F/F/S structure and a trilayer S/F/F/F/S configuration, in which case the outer F layers can have either a uniform or conical texture relative to the central uniform F layer. Our results demonstrate that for supercurrents flowing perpendicular to the F/F interfaces, incorporating a conical texture yields the most effective way to observe the signatures of long-ranged spin-triplet supercurrents. We also consider three different types of finite-sized two-dimensional magnetic structures subjected to an applied magnetic field normal to the junction plane: a S/F/S junction with uniform magnetization texture and two S/F/F/S configurations with differing F/F bilayer arrangements. In one case, the F/F interface is parallel with the S/F junction interfaces while in the other case, the F/F junction is oriented perpendicular to the S/F interfaces. We then discuss the proximity vortices and corresponding spatial maps of currents inside the junctions. For the uniform S/F/S junction, we analytically calculate the magnetic field induced supercurrent and pair potential in both the narrow and wide junction regimes, thus providing insight into the variations in the Fraunhofer diffraction patterns and proximity vortices when transitioning from a wide junction to a narrow one. Our extensive computations demonstrate that the induced long-range spin-triplet supercurrents can deeply penetrate uniform F/F bilayers when spin-singlet supercurrents flow parallel to the

    17. EIS-0126: Remedial Actions at the Former Climax Uranium Company Uranium Mill Site, Grand Junction, Mesa County, Colorado

      Broader source: Energy.gov [DOE]

      The U.S. Department of Energy developed this EIS to assess the environmental impacts of remediating the residual radioactive materials left from the inactive uranium processing site and associated properties located in Grand Junction, Colorado.

    18. Electronic transport in biphenyl single-molecule junctions with carbon nanotubes electrodes: The role of molecular conformation and chirality

      SciTech Connect (OSTI)

      Brito Silva, C. A. Jr.; Granhen, E. R. [Pos-Graduacao em Engenharia Eletrica, Universidade Federal do Para, 66075-900 Belem, PA (Brazil); Silva, S. J. S. da; Leal, J. F. P. [Pos-Graduacao em Fisica, Universidade Federal do Para, 66075-110 Belem, PA (Brazil); Del Nero, J. [Departamento de Fisica, Universidade Federal do Para, 66075-110 Belem, PA (Brazil); Divisao de Metrologia de Materiais, Instituto Nacional de Metrologia, Normalizacao e Qualidade Industrial, 25250-020 Duque de Caxias, RJ (Brazil); Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ (Brazil); Pinheiro, F. A. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ (Brazil)

      2010-08-15

      We investigate, by means of ab initio calculations, electronic transport in molecular junctions composed of a biphenyl molecule attached to metallic carbon nanotubes. We find that the conductance is proportional to cos{sup 2} {theta}, with {theta} the angle between phenyl rings, when the Fermi level of the contacts lies within the frontier molecular orbitals energy gap. This result, which agrees with experiments in biphenyl junctions with nonorganic contacts, suggests that the cos{sup 2} {theta} law has a more general applicability, irrespective of the nature of the electrodes. We calculate the geometrical degree of chirality of the junction, which only depends on the atomic positions, and demonstrate that it is not only proportional to cos{sup 2} {theta} but also is strongly correlated with the current through the system. These results indicate that molecular conformation plays the preponderant role in determining transport properties of biphenyl-carbon nanotubes molecular junctions.

    19. Superlinear generation of exciton and related paramagnetism induced by forward current in a diamond p-i-n junction

      SciTech Connect (OSTI)

      Natori, Kenji

      2015-02-07

      The concentration of excitons generated in a high-quality diamond p-i-n junction is investigated considering the forward current characteristics of the junction. As the forward current in the junction increases, the exciton concentration increases superlinearly, contrary to the linear increases of the electron and hole concentration. This tendency suggests a superlinear increase in emission intensity due to exciton recombination. The increase rate is more radical than quadratic, in accordance with the observed increase of the integrated intensity of free exciton emission. To estimate the concentration of triplet excitons generated in the p-i-n junction, observation of the paramagnetism due to the exciton spin moment is proposed. The magnetic susceptibility superlinearly increases with the increase in the forward current, unlike any other magnetic property of the device.

    20. NREL's Multi-Junction Solar Cells Teach Scientists How to Turn Plants into

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      Powerhouses - News Releases | NREL NREL's Multi-Junction Solar Cells Teach Scientists How to Turn Plants into Powerhouses May 12, 2011 Plants can overcome their evolutionary legacies to become much better at using biological photosynthesis to produce energy, the kind of energy that can power vehicles in the near future, an all-star collection of biologists, physicists, photochemists, and solar scientists has found. A U.S. Department of Energy (DOE) workshop that drew a prestigious collection

    1. U.S. Department of Energy at Grand Junction 2003 Annual Inspection⎯Monticello, Utah

      Office of Legacy Management (LM)

      at Grand Junction 2003 Annual Inspection⎯Monticello, Utah November 2003 Page 1 2003 Annual Inspection of the Monticello Mill Tailings (USDOE) and Monticello Radioactively Contaminated Properties Sites Summary The Monticello site, which includes the U.S. Department of Energy (DOE) Monticello Mill Tailings Site (MMTS) and the Monticello Radioactively Contaminated Properties site, was inspected September 23-25, 2003. A follow-up inspection of the Soil and Sediment properties was conducted on

    2. In the OSTI Collections: Josephson Junctions | OSTI, US Dept of Energy

      Office of Scientific and Technical Information (OSTI)

      Office of Scientific and Technical Information Josephson Junctions Article Acknowledgement: Dr. William N. Watson, Physicist DOE Office of Scientific and Technical Information Terahertz Radiation Examining Subatomic Particles Measuring Material Properties Noise Spin and Supercurrents References Research Organizations Reports available through OSTI's SciTech Connect Additional References When a steady voltage gradient is applied along an ordinary conducting wire, electrons in the wire will

    3. The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions

      SciTech Connect (OSTI)

      Cooper, David; Twitchett-Harrison, Alison C.; Midgley, Paul A.; Dunin-Borkowski, Rafal E.

      2007-05-01

      Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs p-n junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered.

    4. Terahertz time domain interferometry of a SIS tunnel junction and a quantum point contact

      SciTech Connect (OSTI)

      Karadi, C

      1995-09-01

      The author has applied the Terahertz Time Domain Interferometric (THz-TDI) technique to probe the ultrafast dynamic response of a Superconducting-Insulating-Superconducting (SIS) tunnel junction and a Quantum Point Contact (QPC). The THz-TDI technique involves monitoring changes in the dc current induced by interfering two picosecond electrical pulses on the junction as a function of time delay between them. Measurements of the response of the Nb/AlO{sub x}/Nb SIS tunnel junction from 75--200 GHz are in full agreement with the linear theory for photon-assisted tunneling. Likewise, measurements of the induced current in a QPC as a function of source-drain voltage, gate voltage, frequency, and magnetic field also show strong evidence for photon-assisted transport. These experiments together demonstrate the general applicability of the THz-TDI technique to the characterization of the dynamic response of any micron or nanometer scale device that exhibits a non-linear I-V characteristic. 133 refs., 49 figs.

    5. Competition between cotunneling, Kondo effect, and direct tunneling in discontinuous high-anisotropy magnetic tunnel junctions

      SciTech Connect (OSTI)

      Ciudad D.; Arena D.; We, Z.-C.; Hindmarch, A.T.; Negusse, E.; Han, X.-F.Han; Marrows, C.H.

      2012-06-07

      The transition between Kondo and Coulomb blockade effects in discontinuous double magnetic tunnel junctions is explored as a function of the size of the CoPt magnetic clusters embedded between AlO{sub x} tunnel barriers. A gradual competition between cotunneling enhancement of the tunneling magnetoresistance (TMR) and the TMR suppression due to the Kondo effect has been found in these junctions, with both effects having been found to coexist even in the same sample. It is possible to tune between these two states with temperature (at a temperature far below the cluster blocking temperature). In addition, when further decreasing the size of the CoPt clusters, another gradual transition between the Kondo effect and direct tunneling between the electrodes takes place. This second transition shows that the spin-flip processes found in junctions with impurities in the barrier are in fact due to the Kondo effect. A simple theoretical model able to account for these experimental results is proposed.

    6. National Uranium Resource Evaluation. Bibliographic index of Grand Junction office uranium reports

      SciTech Connect (OSTI)

      Johnson, J.B.

      1981-05-01

      In October 1978, Mesa College entered into subcontract with Bendix Field Engineering Corporation (BFEC) to prepare a bibliographic index of the uranium raw materials reports issued by the Grand Junction Office of the US Department of Energy (DOE). Bendix, prime contractor to the Grand Junction Office, operates the Technical Library at the DOE facility. Since the early 1950s, approximately 2700 reports have been issued by the Grand Junction Office. These reports were the results of uranium investigations conducted by federal agencies and their subcontractors. The majority of the reports cover geology, mineralogy, and metallurgy of uranium and/or thorium. No single, complete list of these reports existed. The purpose of this subcontract was to compile a comprehensive index to these reports. The Mesa College geology faculty worked with the BFEC and DOE staffs to develop the format for the index. Undergraduate geology students from Mesa compiled a master record sheet for each report. All reports issued up to January 1, 1979 were included in the bibliography. The bibliography is in preliminary, unedited form. It is being open-filed at this time, on microfiche, to make the information available to the public on a timely basis. The bibliography is divided into a master record list arranged in alpha-numeric order by report identification number, with separate indices arranged by title, author, state and county, 1/sup 0/ x 2/sup 0/ NTMS quadrangle, key words, and exploration area.

    7. Work plan for ground water elevation data recorder/monitor well injection at Grand Junction, Colorado

      SciTech Connect (OSTI)

      Not Available

      1994-07-18

      The purpose of this document is to describe the work that will be performed and the procedures that will be followed during installation of ground water monitor wells and ground water elevation data recorders (data loggers) at the Grand Junction, Colorado, Uranium Mill Tailings Remedial Action (UMTRA) Project site. The monitor wells and data loggers will be used to gather required time-dependent data to investigate the interaction between the shallow aquifer and the Colorado River. Data collection objectives (DCO) identify reasons for collecting data. The following are DCOs for the Grand Junction ground water elevation data recorder/monitor well installation project: long-term continuous ground water level data and periodic ground water samples will be collected to better understand the relationship between surface and ground water at the site; water level and water quality data will eventually be used in future ground water modeling to more firmly establish boundary conditions in the vicinity of the Grand Junction processing site; modeling results will be used to demonstrate and document the potential remedial alternative of natural flushing.

    8. Site observational work plan for the UMTRA project site at Grand Junction, Colorado

      SciTech Connect (OSTI)

      1996-01-01

      This site observational work plan (SOWP) is one of the first Uranium Mill Tailings Remedial Action (UMTRA) Ground Water Project documents developed to select a compliance strategy that meets the UMTRA ground water standards for the Grand Junction site. This SOWP applies information about the Grand Junction site to the compliance strategy selection framework developed in the UMTRA Ground Water Project draft programmatic environmental impact statement. This risk-based, decision-making framework identifies the decision logic for selecting compliance strategies that could be used to meet the ground water standards. The US Department of Energy (DOE) goal is to implement a cost-effective site strategy that complies with the ground water standards and protects human health and the environment. Based on an evaluation of the site characterization and risk assessment data available for the preparation of this SOWP, DOE proposes that the most likely compliance strategy for the Grand Junction site is no remediation with the application of supplemental standards. This proposed strategy is based on a conceptual site model that indicates site-related contamination is confined to a limited-use aquifer as defined in the ground water standards. The conceptual model demonstrates that the uranium processing-related contamination at the site has affected the unconfined alluvial aquifer, but not the deeper confined aquifer.

    9. Final report of the radiological release survey of Building 11 at the Grand Junction Office Facility

      SciTech Connect (OSTI)

      Johnson, R.K.; Corle, S.G.

      1997-09-01

      The U.S. Department of Energy (DOE) Grand Junction Office (GJO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore concentrates and mill tailings during vanadium refining activities of the Manhattan Engineer District, and during sampling, assaying, pilot milling, storage, and brokerage activities conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJO Remedial Action Project (GJORAP) to clean up and restore the facility lands, improvements, and underlying aquifer. WASTREN-Grand Junction is the site contractor for the facility and the remedial action contractor for GJORAP. Building 11 and the underlying soil were found not to be radiologically contaminated; therefore, the building can be released for unrestricted use. Placards have been placed at the building entrances indicating the completion of the radiological release survey and prohibiting the introduction of any radioactive materials within the building without written approvals from the GJO Facilities Operations Manager. This document was prepared in response to a DOE-GJO request for an individual final release report for each GJO building.

    10. Final audit report of remedial action construction at the UMTRA Project, Grand Junction, Colorado, processing site

      SciTech Connect (OSTI)

      1995-02-01

      This final audit report (FAR) for remedial action at the Grand Junction, Colorado, Uranium Mill Tailings Remedial Action (UMTRA) Project processing site consists of a summary of the radiological surveillances/ audits, the quality assurance (QA) in-process surveillances, and the QA final close-out inspection performed by the US Department of Energy (DOE) and Technical Assistance Contractor (TAC). The FAR also summarizes other surveillances performed by the US Nuclear Regulatory Commission (NRC). To summarize, a total of one finding and 127 observations were noted during DOE/TAC audit and surveillance activities. The NRC noted general site-related observations during the OSCRs. Follow-up to responses required from MK-Ferguson for the DOE/TAC finding and observations indicated that all issues related to the Grand Junction processing site were resolved and closed out to the DOE`s satisfaction. The NRC OSCRs resulted in no issues related to the Grand Junction processing site requiring a response from MK-Ferguson.

    11. Final report of the radiological release survey of Building 19 at the Grand Junction Office Facility

      SciTech Connect (OSTI)

      Johnson, R.K.; Corle, S.G.

      1997-09-01

      The U.S. Department of Energy (DOE) Grand Junction Office (GJO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore concentrates and mill tailings during vanadium refining activities of the Manhattan Engineer District, and during sampling, assaying, pilot milling, storage, and brokerage activities conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJO Remedial Action Project (GJORAP) to clean up and restore the facility lands, improvements, and underlying aquifer. WASTREN-Grand Junction is the site contractor for the facility and the remedial action contractor for GJORAP. Building 19 and the underlying soil were found not to be radiologically contaminated; therefore, the building can be released for unrestricted use. Placards have been placed at the building entrances indicating the completion of the radiological release survey and prohibiting the introduction of any radioactive materials within the building without written approvals from the GJO Facilities Operations Manager. This document was prepared in response to a DOE-GJO request for an individual final release report for each GJO building.

    12. Final report of the radiological release survey of Building 54 at the Grand Junction Office Facility

      SciTech Connect (OSTI)

      Johnson, R.K.; Corle, S.G.

      1997-09-01

      The U.S. Department of Energy (DOE) Grand Junction Office (GJO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore concentrates and mill tailings during vanadium refining activities of the Manhattan Engineer District, and during sampling, assaying, pilot milling, storage, and brokerage activities conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJO Remedial Action Project (GJORAP) to clean up and restore the facility lands, improvements, and underlying aquifer. WASTREN-Grand Junction is the site contractor for the facility and the remedial action contractor for GJORAP. Building 54 and the underlying soil were found not to be radiologically contaminated, and can be released for unrestricted use. Placards have been placed at the building entrances indicating the completion of the radiological release survey and prohibiting the introduction of any radioactive materials within the building without written approvals from the GJO Facilities Operations Manager. This document was prepared in response to a DOE-GJO request for an individual release report for each GJO building.

    13. Final report of the radiological release survey of Building 29 at the Grand Junction Office Facility

      SciTech Connect (OSTI)

      Johnson, R.K.; Corle, S.G.

      1997-09-01

      The U.S. Department of Energy (DOE) Grand Junction Office (GJO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore concentrates and mill tailing during vanadium refining activities of the Manhattan Engineer District, and during sampling, assaying, pilot milling, storage, and brokerage activities conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJO Remedial Action Project (GJORAP) to clean up and restore the facility lands, improvements, and underlying aquifer. WASTREN-Grand Junction is the site contractor for the facility and the remedial action contractor for GJORAP. Building 29 and the underlying soil were found not to be radiologically contaminated; therefore, the building can be released for unrestricted use. Placards have been placed at the building entrances indicating the completion of the radiological release survey and prohibiting the introduction of any radioactive materials within the building without written approvals from the GJO Facilities Operations Manager. This document was prepared in response to a DOE-GJO request for an individual final release report for each GJO building.

    14. Physical model of the contact resistivity of metal-graphene junctions

      SciTech Connect (OSTI)

      Chaves, Ferney A., E-mail: ferneyalveiro.chaves@uab.cat; Jimnez, David [Departament d'Enginyeria Electrnica, Escola d'Enginyeria, Universitat Autnoma de Barcelona, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Cummings, Aron W. [ICN2Institut Catal de Nanocincia i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Roche, Stephan [ICN2Institut Catal de Nanocincia i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); ICREA, Instituci Catalana de Recerca i Estudis Avanats, 08070 Barcelona (Spain)

      2014-04-28

      While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

    15. New Insights for Improving the Designs of Flexible Duct Junction Boxes (Fact Sheet), Building America Case Study: Technology Solutions for New and Existing Homes, Building Technologies Office (BTO)

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      New Insights for Improving the Designs of Flexible Duct Junction Boxes PROJECT INFORMATION IBACOS www.ibacos.com Construction: Fiberglass duct board or sheet metal junction boxes Type: Flexible duct constant-volume HVAC systems Builders: Those using ACCA Manual D process for sizing duct runs Size: N/A Price Range: N/A Date completed: N/A Climate Zone: All PERFORMANCE DATA Pressure losses are high for flexible duct junction boxes relative to other standard duct fittings; however, contractors

    16. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells using AFM-Based Electrical Techniques with Nanometer Resolution

      SciTech Connect (OSTI)

      Jiang, C. S.; Heath, J. T.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.

      2011-01-01

      Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

    17. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells Using AFM-Based Electrical Techniques with Nanometer Resolution: Preprint

      SciTech Connect (OSTI)

      Jiang, C. S.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.; Heath, J. T.

      2011-07-01

      Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

    18. Carcinoembryonic antigen promotes colorectal cancer progression by targeting adherens junction complexes

      SciTech Connect (OSTI)

      Bajenova, Olga; Chaika, Nina; Tolkunova, Elena; Davydov-Sinitsyn, Alexander; Gapon, Svetlana; Thomas, Peter; OBrien, Stephen

      2014-06-10

      Oncomarkers play important roles in the detection and management of human malignancies. Carcinoembryonic antigen (CEA, CEACAM5) and epithelial cadherin (E-cadherin) are considered as independent tumor markers in monitoring metastatic colorectal cancer. They are both expressed by cancer cells and can be detected in the blood serum. We investigated the effect of CEA production by MIP101 colorectal carcinoma cell lines on E-cadherin adherens junction (AJ) protein complexes. No direct interaction between E-cadherin and CEA was detected; however, the functional relationships between E-cadherin and its AJ partners: ?-, ?- and p120 catenins were impaired. We discovered a novel interaction between CEA and beta-catenin protein in the CEA producing cells. It is shown in the current study that CEA overexpression alters the splicing of p120 catenin and triggers the release of soluble E-cadherin. The influence of CEA production by colorectal cancer cells on the function of E-cadherin junction complexes may explain the link between the elevated levels of CEA and the increase in soluble E-cadherin during the progression of colorectal cancer. - Highlights: Elevated level of CEA increases the release of soluble E-cadherin during the progression of colorectal cancer. CEA over-expression alters the binding preferences between E-cadherin and its partners: ?-, ?- and p120 catenins in adherens junction complexes. CEA produced by colorectal cancer cells interacts with beta-catenin protein. CEA over-expression triggers the increase in nuclear beta-catenin. CEA over-expression alters the splicing of p120 catenin protein.

    19. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

      SciTech Connect (OSTI)

      Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

      2014-10-06

      InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

    20. Frequency-domain stimulated and spontaneous light emission signals at molecular junctions

      SciTech Connect (OSTI)

      Harbola, Upendra; Agarwalla, Bijay Kumar; Mukamel, Shaul

      2014-08-21

      Using a diagrammatic superoperator formalism we calculate optical signals at molecular junctions where a single molecule is coupled to two metal leads which are held at different chemical potentials. The molecule starts in a nonequilibrium steady state whereby it continuously exchanges electrons with the leads with a constant electron flux. Expressions for frequency domain optical signals measured in response to continuous laser fields are derived by expanding the molecular correlation functions in terms of its many-body states. The nonunitary evolution of molecular states is described by the quantum master equation.

    1. Multi-state magnetoresistance in ferromagnet/organic-ferromagnet/ferromagnet junctions

      SciTech Connect (OSTI)

      Hu, G. C. Zuo, M. Y.; Li, Y.; Ren, J. F.; Xie, S. J.

      2014-01-20

      Spin-dependent transport through a ferromagnetic metal/organic-ferromagnet/ferromagnet metal junction is investigated theoretically. It is demonstrated that the current through the device strongly depends on the alignment of the magnetization orientations of the electrodes and interlayer. The spin-related electron tunnelling between the ferromagnetic electrodes suffers a further spin selection induced by the spin-polarized states of the central organic ferromagnet. This work indicates an intriguing prospect of organic ferromagnets in spintronic devices, such as four-state magnetoresistance manipulated by a magnetic field.

    2. PCB usage at the Grand Junction Area Office Facility. Final report

      SciTech Connect (OSTI)

      Miller, M.E.; Donivan, S.

      1982-06-01

      The development, implementation, and results of the polychlorinated biphenyl (PCB) identification project at the Grand Junction Area Office (GJAO) are summarized. Methodology for the PCB analysis is described, and results are tabulated. Of the 51 transformers and disconnects in use at GJAO, 15 unites were determined to be PCB-contaminated or filled with PCBs. This number falls within EPA's estimate of 25 to 40 percent of all transformers in use being at least contaminated. Approximately 324 gallons of PCBs and 515 gallons of PCB-contaminated fluids are being used currently. No contaminated transformers or disconnects are in a position to contaminate food or feed products at the facility.

    3. Interim long-term surveillance plan for the Cheney disposal site near, Grand Junction, Colorado

      SciTech Connect (OSTI)

      1997-08-01

      This interim long-term surveillance plan (LTSP) describes the U.S. Department of Energy`s (DOE) long-term care program for the Uranium Mill Tailings Remedial Action (UMTRA) Project Cheney Disposal Site in Mesa County near Grand Junction, Colorado. This LSTP describes the long-term surveillance program the DOE will implement to ensure the Cheney disposal site performs as designed and is cared for in a manner that protects the public health and safety and the environment. Before each disposal site is licensed for custody and long-term care, the Nuclear Regulatory Commission (NRC) requires the DOE to submit such a site-specific LTSP.

    4. Long-term surveillance plan for the Cheney disposal site near Grand Junction, Colorado

      SciTech Connect (OSTI)

      1997-07-01

      This long-term surveillance plan (LTSP) describes the U.S. Department of Energy`s (DOE) long-term care program for the Uranium Mill Tailings Remedial Action (UMTRA) Project Cheney Disposal Site near Grand Junction, Colorado. This LSTP describes the long-term surveillance program the DOE will implement to ensure the Cheney Disposal Site performs as designed and is cared for in a manner that protects the public health and safety and the environment. Before each disposal site is licensed for custody and long-term care, the Nuclear Regulatory Commission (NRC) requires the DOE to submit such a site-specific LTSP.

    5. Unpaired Majorana modes in Josephson-Junction Arrays with gapless bulk excitations

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Pino, M.; Tsvelik, A.; Ioffe, L. B.

      2015-11-06

      In this study, the search for Majorana bound states in solid-state physics has been limited to materials that display a gap in their bulk spectrum. We show that such unpaired states appear in certain quasi-one-dimensional Josephson-junction arrays with gapless bulk excitations. The bulk modes mediate a coupling between Majorana bound states via the Ruderman-Kittel-Yosida-Kasuya mechanism. As a consequence, the lowest energy doublet acquires a finite energy difference. For a realistic set of parameters this energy splitting remains much smaller than the energy of the bulk eigenstates even for short chains of length L~10.

    6. Probing flexible conformations in molecular junctions by inelastic electron tunneling spectroscopy

      SciTech Connect (OSTI)

      Deng, Mingsen; Ye, Gui; Jiang, Jun; Cai, Shaohong; Sun, Guangyu

      2015-01-15

      The probe of flexible molecular conformation is crucial for the electric application of molecular systems. We have developed a theoretical procedure to analyze the couplings of molecular local vibrations with the electron transportation process, which enables us to evaluate the structural fingerprints of some vibrational modes in the inelastic electron tunneling spectroscopy (IETS). Based on a model molecule of Bis-(4-mercaptophenyl)-ether with a flexible center angle, we have revealed and validated a simple mathematical relationship between IETS signals and molecular angles. Our results might open a route to quantitatively measure key geometrical parameters of molecular junctions, which helps to achieve precise control of molecular devices.

    7. Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

      SciTech Connect (OSTI)

      Tomasello, R.; Carpentieri, M.; Finocchio, G.

      2013-12-16

      This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed.

    8. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

      SciTech Connect (OSTI)

      Liu, X.; Zhang, X. W. Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L.

      2014-11-03

      We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

    9. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint

      SciTech Connect (OSTI)

      Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

      2006-05-01

      We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

    10. Voltage-controlled magnetic anisotropy in Fe|MgO tunnel junctions studied by x-ray absorption spectroscopy

      SciTech Connect (OSTI)

      Miwa, Shinji Matsuda, Kensho; Tanaka, Kazuhito; Goto, Minori; Suzuki, Yoshishige; Kotani, Yoshinori; Nakamura, Tetsuya

      2015-10-19

      In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe|MgO tunnel junctions was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and magnetic circular dichroism spectroscopy. The Fe|MgO tunnel junctions showed enhanced perpendicular magnetic anisotropy under external negative voltage, which induced charge depletion at the Fe|MgO interface. Despite the application of voltages of opposite polarity, no trace of chemical reaction such as a redox reaction attributed to O{sup 2−} migration was detected in the x-ray absorption spectra of the Fe. The VCMA reported in the Fe|MgO-based magnetic tunnel junctions must therefore originate from phenomena associated with the purely electric effect, that is, surface electron doping and/or redistribution induced by an external electric field.

    11. Quantitative interpretation of the transition voltages in gold-poly(phenylene) thiol-gold molecular junctions

      SciTech Connect (OSTI)

      Wu, Kunlin; Bai, Meilin; Hou, Shimin; Sanvito, Stefano

      2013-11-21

      The transition voltage of three different asymmetric Au/poly(phenylene) thiol/Au molecular junctions in which the central molecule is either benzene thiol, biphenyl thiol, or terphenyl thiol is investigated by first-principles quantum transport simulations. For all the junctions, the calculated transition voltage at positive polarity is in quantitative agreement with the experimental values and shows weak dependence on alterations of the Au-phenyl contact. When compared to the strong coupling at the Au-S contact, which dominates the alignment of various molecular orbitals with respect to the electrode Fermi level, the coupling at the Au-phenyl contact produces only a weak perturbation. Therefore, variations of the Au-phenyl contact can only have a minor influence on the transition voltage. These findings not only provide an explanation to the uniformity in the transition voltages found for ?-conjugated molecules measured with different experimental methods, but also demonstrate the advantage of transition voltage spectroscopy as a tool for determining the positions of molecular levels in molecular devices.

    12. Electronic transport through Al/InN nanowire/Al junctions

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Lu, Tzu -Ming; Wang, George T.; Pan, Wei; Zhao, S.; Mi, Z.

      2016-02-01

      We report non-linear electronic transport measurement of Al/Si-doped n-type InN nanowire/Al junctions performed at T = 0.3 K, below the superconducting transition temperature of the Al electrodes. The proximity effect is observed in these devices through a strong dip in resistance at zero bias. In addition to the resistance dip at zero bias, several resistance peaks can be identified at bias voltages above the superconducting gap of the electrodes, while no resistance dip is observed at the superconducting gap. The resistance peaks disappear as the Al electrodes turn normal beyond the critical magnetic field except one which remains visible atmore » fields several times higher than critical magnetic field. An unexpected non-monotonic magnetic field dependence of the peak position is observed. As a result, we discuss the physical origin of these observations and propose that the resistance peaks could be the McMillan-Rowell oscillations arising from different closed paths localized near different regions of the junctions.« less

    13. Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

      SciTech Connect (OSTI)

      Rajamohanan, Bijesh Mohata, Dheeraj; Hollander, Matthew; Datta, Suman; Zhu, Yan; Hudait, Mantu; Jiang, Zhengping; Klimeck, Gerhard

      2014-01-28

      In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-κ gate dielectric. HetJ pTFET exhibited drive current of 35 μA/μm in comparison to homJ pTFET, which exhibited drive current of 0.3 μA/μm at V{sub DS} = −0.5 V under DC biasing conditions. Additionally, with pulsing of 1 μs gate voltage, hetJ pTFET exhibited enhanced drive current of 85 μA/μm at V{sub DS} = −0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies.

    14. Lessons Learned: The Grand Junction Office Site Transfer to Private Ownership

      SciTech Connect (OSTI)

      none,

      2001-02-01

      The U.S. Department of Energy Grand Junction Office (DOE-GJO) in Grand Junction, Colorado, has played an integral role within the DOE complex for many years. GJO has a reputation for outstanding quality in the performance of complex environmental restoration projects, utilizing state-of-the-art technology. Many of the GJO missions have been completed in recent years. In 1998, DOE Headquarters directed GJO to reduce its mortgage costs by transferring ownership of the site and to lease space at a reasonable rate for its ongoing work. A local community group and GJO have entered into a sales contract; signing of the Quitclaim Deed is planned for February 16, 2001. Site transfer tasks were organized as a project with a critical-path schedule to track activities and a Site Transition Decision Plan was prepared that included a decision process flow chart, key tasks, and responsibilities. Specifically, GJO identified the end state with affected parties early on, successfully dealt with site contamination issues, and negotiated a lease-back arrangement, resulting in an estimated savings of more than 60 percent of facility maintenance costs annually. Lessons learned regarding these transition activities could be beneficial to many other sites.

    15. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

      SciTech Connect (OSTI)

      Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

      2014-10-21

      The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

    16. Hetero-junction photovoltaic device and method of fabricating the device

      DOE Patents [OSTI]

      Aytug, Tolga; Christen, David K; Paranthaman, Mariappan Parans; Polat, Ozgur

      2014-02-10

      A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

    17. Method for forming p-n junctions and solar-cells by laser-beam processing

      DOE Patents [OSTI]

      Narayan, Jagdish; Young, Rosa T.

      1979-01-01

      This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.

    18. Electric Field Penetration in Au/Nb:SrTiO3 Schottky Junctions Probed by Bias-Dependent Internal Photoemission

      SciTech Connect (OSTI)

      Hikita, Y.

      2011-08-15

      Electric field penetration into the metallic side of a Schottky junction is in principle a universal phenomenon, the magnitude of which increases with the semiconductor permittivity. Here, we quantitatively probe this effect using bias-dependent internal photoemission spectroscopy at the Schottky junction between a large dielectric permittivity semiconductor SrTiO{sub 3} and gold. A clear linear reduction of the barrier height with increasing interface electric field was observed, highlighting the importance of field penetration into the gold. The interfacial permittivity of SrTiO{sub 3} at the interface is reduced from the bulk value, reflecting intrinsic suppression at the interface.

    19. Multi-terminal magnetotransport measurements over a tunable graphene p-n junction created by AFM-nanomachining

      SciTech Connect (OSTI)

      Schmidt, H.; Smirnov, D.; Rode, J.; Haug, R. J.

      2013-12-04

      An Atomic Force Microscope is used to alter one part of a single layer graphene sample locally. Transport experiments at low temperatures are then used to characterize the different parts independently with field effect and Hall measurements. It is shown, that the nanomachining leads to an effective doping in the altered area and therefore to a difference in the charge carrier density of ?n = 3.5 ? 10{sup 15}m{sup ?2} between the unchanged and changed part. These two parts can be tuned with a global backgate to form a junction of different polarity, i.e. a p-n junction.

    20. GaN-based vertical-cavity laser performance improvements using tunnel-junction-cascaded active regions

      SciTech Connect (OSTI)

      Piprek, Joachim

      2014-07-07

      This Letter investigates the output power enhancement achieved by tunnel junction insertion into the InGaN multi-quantum well (MQW) active region of a 410?nm vertical-cavity surface-emitting laser which enables the repeated use of carriers for light generation (carrier recycling). While the number of quantum wells remains unchanged, the tunnel junction eliminates absorption caused by the non-uniform MQW carrier distribution. The thermal resistance drops and the excess bias lead to a surprisingly small rise in self-heating.

    1. Observation of Energy Levels Quantization in Underdamped Josephson Junctions above the Classical-Quantum Regime Crossover Temperature

      SciTech Connect (OSTI)

      Silvestrini, P.; Ruggiero, B.; Russo, M.; Silvestrini, P.; Ruggiero, B.; Russo, M.; Palmieri, V.G.

      1997-10-01

      We present a clear observation of the presence of energy levels quantization in high quality Nb-AlO{sub x} -Nb underdamped Josephson junctions at temperatures above the quantum crossover temperature. This has been possible by extending the measurements of the escape rate out of the zero-voltage state at higher sweeping frequency (dI/dt up to 25A/sec) in order to induce nonstationary conditions in the energy potential describing the junction dynamics. {copyright} {ital 1997} {ital The American Physical Society}

    2. Effect of annealing on local composition and electrical transport correlations in MgO-based magnetic tunnel junctions.

      SciTech Connect (OSTI)

      Chiaramonti, A. N.; Schreiber, D. K.; Egelhoff, W. F.; Seidman, D. N.; Petford-Long, A. K.; Materials Science Division; NIST; Northwestern Univ.

      2009-01-01

      The effects of annealing on the electrical transport behavior of CoFe/MgO/CoFe magnetic tunnel junctions have been studied using a combination of site-specific in situ transmission electron microscopy and three-dimensional atom-probe tomography. Annealing leads to an increase in the resistance of the junctions. A shift in the conductance curve (dI/dV) minimum from 0 V for the as-grown specimen correlates with a sharply defined layer of CoFe oxide at the lower ferromagnetic interface. Annealing decreases the asymmetry in the conductance by making the interfaces more diffuse and the tunnel barrier more chemically homogeneous.

    3. Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

      SciTech Connect (OSTI)

      Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

      2012-04-15

      We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

    4. Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

      SciTech Connect (OSTI)

      Atwater, H. A.

      2008-11-01

      We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

    5. New Whole-House Solutions Case Study: Rural Development Inc., Wisdom Way Solar Village, Greenfield, MA

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      With design assistance and energy analysis from the U.S. Department of Energy's CARB Building America research team, led by Steven Winter Associates, the nonprofit builder Rural Development, Inc., built Wisdom Way Solar Village, a community of 20 energy-efficient solar duplexes in western Massachusetts in 2010. The homes achieve HERS scores of 8 to 18 with a highly insulated enclosure, energy-saving equipment, and solar water heating to give home owners heating savings of nearly $2,200 per year.

    6. New Whole-House Solutions Case Study: Rural Development, Greenfield, Massachusetts

      SciTech Connect (OSTI)

      none,

      2013-09-01

      This builder worked with Consortium for Advanced Residential Buildings to design affordable HERS-8 homes (60 w/o PV), with double-stud walls heavy insulation, low-load sealed-combustion gas space heaters, triple-pane windows, solar water heating, and PV

    7. Building America Case Study: Conway Street Apartments, Greenfield, Massachusetts (Fact Sheet)

      SciTech Connect (OSTI)

      Not Available

      2014-12-01

      While single-family, detached homes account for 63% of households (EIA 2009); multi-family homes account for a very large portion of that remaining housing stock, and this fraction is growing. Through recent research efforts, CARB has been evaluating strategies and technologies that can make dramatic improvements in energy performance in multi-family buildings

    8. Existing Whole-House Solutions Case Study: Conway Street Apartments - Greenfield, Massachusetts

      SciTech Connect (OSTI)

      2014-12-01

      Through recent research efforts, CARB has been evaluating strategies and technologies that can make dramatic improvements in energy performance in multifamily buildings. In this project, the team helped to transform a 100-year-old empty school building into 12 high performance apartments with low energy costs. The advanced features included an excellent thermal envelope of closed-cell spray foam and triple-pane windows, ductless heat pumps, solar thermal hot water system, and photovoltaic system.

    9. Hawaii energy strategy project 2: Fossil energy review. Task 3 -- Greenfield options: Prospects for LNG use

      SciTech Connect (OSTI)

      Breazeale, K.; Fesharaki, F.; Fridley, D.; Pezeshki, S.; Wu, K.

      1993-12-01

      This paper begins with an overview of the Asia-Pacific LNG market, its major players, and the likely availability of LNG supplies in the region. The discussion then examines the possibilities for the economic supply of LNG to Hawaii, the potential Hawaiian market, and the viability of an LNG project on Oahu. This survey is far from a complete technical assessment or an actual engineering/feasibility study. The economics alone cannot justify LNG`s introduction. The debate may continue as to whether fuel diversification and environmental reasons can outweigh the higher costs. Several points are made. LNG is not a spot commodity. Switching to LNG in Hawaii would require a massive, long-term commitment and substantial investments. LNG supplies are growing very tight in the Asia-Pacific region. Some of the environmental benefits of LNG are not entirely relevant in Hawaii because Hawaii`s air quality is generally excellent. Any air quality benefits may be more than counterbalanced by the environmental hazards connected with large-scale coastal zone construction, and by the safety hazards of LNG carriers, pipelines, etc. Lastly, LNG is not suitable for all energy uses, and is likely to be entirely unsuitable for neighbor island energy needs.

    10. Technical basis for radiological release of Grand Junction Office Building 2. Volume 2, dose assessment supporting data

      SciTech Connect (OSTI)

      1997-07-01

      The second volume of the Grand Junction Office Action Program Technical Basis for Radiological Release of Grand Junction Office Building 2 report includes the data quality objectives (DQO), sampling plan, collected data, and analysis used to model future radiation doses to members of the public occupying Building 2 on the U.S. Department of Energy (DOE) Grand Junction Office (GJO) site. This volume was assembled by extracting relevant components of the Grand Junction Projects Office Remedial Action Project Building 2 Public Dose Evaluation (DOE 1996) and inserting recent additional data that was gathered and dose pathway modeling that was performed. The intent of this document is to provide all derived guidance decisions, assumptions, measured data, testing results, and pathway modeling software input and output data that supports the discussion and determinations presented in Volume 1 of this report. For constructive employment of this document, the reader is encouraged to closely follow Volume 1 for proper association with the segment of information being examined.

    11. The benzene metabolite trans,trans-muconaldehyde blocks gap junction intercellular communication by cross-linking connexin43

      SciTech Connect (OSTI)

      Rivedal, Edgar Leithe, Edward

      2008-11-01

      Benzene is used at large volumes in many different human activities. Hematotoxicity and cancer-causation as a result of benzene exposure was recognized many years ago, but the mechanisms involved remain unclear. Aberrant regulation of gap junction intercellular communication (GJIC) has been linked to both cancer induction and interference with normal hematopoietic development. We have previously suggested that inhibition of GJIC may play a role in benzene toxicity since benzene metabolites were found to block GJIC, the ring-opened trans,trans-muconaldehyde (MUC) being the most potent metabolite. In the present work we have studied the molecular mechanisms underlying the MUC-induced inhibition of gap junctional communication. We show that MUC induces cross-linking of the gap junction protein connexin43 and that this is likely to be responsible for the induced inhibition of GJIC, as well as the loss of connexin43 observed in Western blots. We also show that glutaraldehyde possesses similar effects as MUC, and we compare the effects to that of formaldehyde. The fact that glutaraldehyde and formaldehyde have been associated with induction of leukemia as well as disturbance of hematopoiesis, strengthens the possible link between the effect of MUC on gap junctions, and the toxic effects of benzene.

    12. High Efficiency Amorphous and Microcrystalline Silicon Based Double-Junction Solar Cells made with Very-High-Frequency Glow Discharge

      SciTech Connect (OSTI)

      Banerjee, Arindam

      2004-10-20

      We have achieved a total-area initial efficiency of 11.47% (active-area efficiency of 12.33%) on a-Si:H/?c-Si:H double-junction structure, where the intrinsic layer bottom cell was made in 50 minutes. On another device in which the bottom cell was made in 30 min, we achieved initial total-area efficiency of 10.58% (active-efficiency of 11.35%). We have shown that the phenomenon of ambient degradation of both ?c-Si:H single-junction and a-Si:H/?c-Si:H double-junction cells can be attributed to impurity diffusion after deposition. Optimization of the plasma parameters led to alleviation of the ambient degradation. Appropriate current matching between the top and bottom component cells has resulted in a stable total-area efficiency of 9.7% (active-area efficiency of 10.42%) on an a-Si:H/?c-Si:H double-junction solar cell in which the deposition time for the ?c-Si:H intrinsic layer deposition was of 30 min.

    13. On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate

      SciTech Connect (OSTI)

      Kolpakov, D. A. Zvonkov, B. N.; Nekorkin, S. M.; Dikareva, N. V.; Aleshkin, V. Ya.; Dubinov, A. A.

      2015-11-15

      A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.

    14. Tuning the thickness of electrochemically grafted layers in large area molecular junctions

      SciTech Connect (OSTI)

      Fluteau, T.; Bessis, C.; Barraud, C. Della Rocca, M. L.; Lafarge, P.; Martin, P.; Lacroix, J.-C.

      2014-09-21

      We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 227 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

    15. Edge-channel interferometer at the graphene quantum Hall pn junction

      SciTech Connect (OSTI)

      Morikawa, Sei; Moriya, Rai; Masubuchi, Satoru Machida, Tomoki; Watanabe, Kenji; Taniguchi, Takashi

      2015-05-04

      We demonstrate a quantum Hall edge-channel interferometer in a high-quality graphene pn junction under a high magnetic field. The co-propagating p and n quantum Hall edge channels traveling along the pn interface functions as a built-in Aharonov-Bohm-type interferometer, the interferences in which are sensitive to both the external magnetic field and the carrier concentration. The trajectories of peak and dip in the observed resistance oscillation are well reproduced by our numerical calculation that assumes magnetic flux quantization in the area enclosed by the co-propagating edge channels. Coherent nature of the co-propagating edge channels is confirmed by the checkerboard-like pattern in the dc-bias and magnetic-field dependences of the resistance oscillations.

    16. Mode-hopping mechanism generating colored noise in a magnetic tunnel junction based spin torque oscillator

      SciTech Connect (OSTI)

      Sharma, Raghav; Drrenfeld, P.; Iacocca, E.; Heinonen, O. G.; kerman, J.; Muduli, P. K.

      2014-09-29

      The frequency noise spectrum of a magnetic tunnel junction based spin torque oscillator is examined where multiple modes and mode-hopping events are observed. The frequency noise spectrum is found to consist of both white noise and 1/f frequency noise. We find a systematic and similar dependence of both white noise and 1/f frequency noise on bias current and the relative angle between the reference and free layers, which changes the effective damping and hence the mode-hopping behavior in this system. The frequency at which the 1/f frequency noise changes to white noise increases as the free layer is aligned away from the anti-parallel orientation w.r.t the reference layer. These results indicate that the origin of 1/f frequency noise is related to mode-hopping, which produces both white noise as well as 1/f frequency noise similar to the case of ring lasers.

    17. A quasi-classical mapping approach to vibrationally coupled electron transport in molecular junctions

      SciTech Connect (OSTI)

      Li, Bin; Miller, William H.; Wilner, Eli Y.; Thoss, Michael

      2014-03-14

      We develop a classical mapping approach suitable to describe vibrationally coupled charge transport in molecular junctions based on the Cartesian mapping for many-electron systems [B. Li and W. H. Miller, J. Chem. Phys. 137, 154107 (2012)]. To properly describe vibrational quantum effects in the transport characteristics, we introduce a simple transformation rewriting the Hamiltonian in terms of occupation numbers and use a binning function to facilitate quantization. The approach provides accurate results for the nonequilibrium Holstein model for a range of bias voltages, vibrational frequencies, and temperatures. It also captures the hallmarks of vibrational quantum effects apparent in step-like structure in the current-voltage characteristics at low temperatures as well as the phenomenon of Franck-Condon blockade.

    18. Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching

      SciTech Connect (OSTI)

      White, T. C.; Mutus, J. Y.; Hoi, I.-C.; Barends, R.; Campbell, B.; Chen, Yu; Chen, Z.; Chiaro, B.; Dunsworth, A.; Jeffrey, E.; Kelly, J.; Neill, C.; O'Malley, P. J. J.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; Martinis, John M.; Megrant, A.; Chaudhuri, S.; and others

      2015-06-15

      Josephson parametric amplifiers have become a critical tool in superconducting device physics due to their high gain and quantum-limited noise. Traveling wave parametric amplifiers (TWPAs) promise similar noise performance, while allowing for significant increases in both bandwidth and dynamic range. We present a TWPA device based on an LC-ladder transmission line of Josephson junctions and parallel plate capacitors using low-loss amorphous silicon dielectric. Crucially, we have inserted ?/4 resonators at regular intervals along the transmission line in order to maintain the phase matching condition between pump, signal, and idler and increase gain. We achieve an average gain of 12?dB across a 4?GHz span, along with an average saturation power of ?92 dBm with noise approaching the quantum limit.

    19. Assessment of cover systems at the Grand Junction, Colorado, uranium mill tailings pile: 1987 field measurements

      SciTech Connect (OSTI)

      Gee, G.W.; Campbell, M.D.; Freeman, H.D.; Cline, J.F.

      1989-02-01

      Four Pacific Northwest Laboratory (PNL) scientists and a technician conducted an onsite evaluation of radon gas exhalation, water content profiles, and plant and animal intrusion for a series of cover systems located on the uranium mill tailings pile at Grand Junction, Colorado. These six plots were sampled extensively down to the radon control layer (e.g., asphalt or wet clay) for soil moisture content and permeability. Radon gas emission through the surface was measured. Soil samples were collected and analyzed in the lab for particle-size distribution, particle density, bulk density, and ambient water content. Prairie dog burrows were excavated to discover the extent to which they penetrated the barriers. Plant type, density, and cover characteristics were measured.

    20. Designing π-stacked molecular structures to control heat transport through molecular junctions

      SciTech Connect (OSTI)

      Kiršanskas, Gediminas; Li, Qian; Solomon, Gemma C.; Flensberg, Karsten; Leijnse, Martin

      2014-12-08

      We propose and analyze a way of using π stacking to design molecular junctions that either enhance or suppress a phononic heat current, but at the same time remain conductors for an electric current. Such functionality is highly desirable in thermoelectric energy converters, as well as in other electronic components where heat dissipation should be minimized or maximized. We suggest a molecular design consisting of two masses coupled to each other with one mass coupled to each lead. By having a small coupling (spring constant) between the masses, it is possible to either reduce or perhaps more surprisingly enhance the phonon conductance. We investigate a simple model system to identify optimal parameter regimes and then use first principle calculations to extract model parameters for a number of specific molecular realizations, confirming that our proposal can indeed be realized using standard molecular building blocks.

    1. Comparison of Theoretical Efficiencies of Multi-junction Concentrator Solar Cells

      SciTech Connect (OSTI)

      Kurtz, S.; Myers, D.; McMahon, W. E.; Geisz, J.; Steiner, M.

      2008-01-01

      Champion concentrator cell efficiencies have surpassed 40% and now many are asking whether the efficiencies will surpass 50%. Theoretical efficiencies of >60% are described for many approaches, but there is often confusion about the theoretical efficiency for a specific structure. The detailed balance approach to calculating theoretical efficiency gives an upper bound that can be independent of material parameters and device design. Other models predict efficiencies that are closer to those that have been achieved. Changing reference spectra and the choice of concentration further complicate comparison of theoretical efficiencies. This paper provides a side-by-side comparison of theoretical efficiencies of multi-junction solar cells calculated with the detailed balance approach and a common one-dimensional-transport model for different spectral and irradiance conditions. Also, historical experimental champion efficiencies are compared with the theoretical efficiencies.

    2. Origin of the smaller conductances of Rh, Pb, and Co atomic junctions in hydrogen environment

      SciTech Connect (OSTI)

      Li, Xue; Chen, Mingyan; Ye, Xiang; Xie, Yi-qun; Ke, San-huang

      2015-02-14

      We study theoretically the structural and electronic origins of the smaller conductances (one conductance quantum, G{sub 0}, and smaller) of Rh, Pb, and Co metal atomic junctions (MAJs) in a hydrogen environment, as were measured in recent experiments. For the Rh MAJs, the 1G{sub 0} conductance is attributed to a stable contact bridged by a single hydrogen molecule whose antibonding state provides a single transport channel. For the Pb and Co MAJs the 1G{sub 0} conductance is, however, ascribed to a linear atomic chain adsorbing two dissociated H atoms, which largely reduces the density of states at the Fermi energy with respect to the pure ones. On the other hand, the small conductances of 0.3G{sub 0} (Rh) and 0.2G{sub 0} (Co) are due to H-decorated atomic chains connected to electrodes by a H atom.

    3. High performance anti-reflection coatings for broadband multi-junction solar cells

      SciTech Connect (OSTI)

      AIKEN,DANIEL J.

      2000-02-23

      The success of bandgap engineering has made high efficiency broadband multi-junction solar cells possible with photo-response out to the band edge of Ge. Modeling has been conducted which suggests that current double layer anti-reflection coating technology is not adequate for these devices in certain cases. Approaches for the development of higher performance anti-reflection coatings are examined. A new AR coating structure based on the use of Herpin equivalent layers is presented. Optical modeling suggests a decrease in the solar weighted reflectance of over 2.5{percent} absolute as a result. This structure requires no additional optical material development and characterization because no new optical materials are necessary. Experimental results and a sensitivity analysis are presented.

    4. Influence of quasiparticle multi-tunneling on the energy flow through the superconducting tunnel junction

      SciTech Connect (OSTI)

      Samedov, V. V.; Tulinov, B. M.

      2011-07-01

      Superconducting tunnel junction (STJ) detector consists of two layers of superconducting material separated by thin insulating barrier. An incident particle produces in superconductor excess nonequilibrium quasiparticles. Each quasiparticle in superconductor should be considered as quantum superposition of electron-like and hole-like excitations. This duality nature of quasiparticle leads to the effect of multi-tunneling. Quasiparticle starts to tunnel back and forth through the insulating barrier. After tunneling from biased electrode quasiparticle loses its energy via phonon emission. Eventually, the energy that equals to the difference in quasiparticle energy between two electrodes is deposited in the signal electrode. Because of the process of multi-tunneling, one quasiparticle can deposit energy more than once. In this work, the theory of branching cascade processes was applied to the process of energy deposition caused by the quasiparticle multi-tunneling. The formulae for the mean value and variance of the energy transferred by one quasiparticle into heat were derived. (authors)

    5. Fully transparent organic transistors with junction-free metallic network electrodes

      SciTech Connect (OSTI)

      Pei, Ke; Wang, Zongrong; Ren, Xiaochen; Zhang, Zhichao; Peng, Boyu; Chan, Paddy K. L.

      2015-07-20

      We utilize highly transparent, junction-free metal network electrodes to fabricate fully transparent organic field effect transistors (OFETs). The patterned transparent Ag networks are developed by polymer crack template with adjustable line width and density. Sheet resistance of the network is 6.8 Ω/sq and optical transparency in the whole visible range is higher than 80%. The bottom contact OFETs with DNTT active layer and parylene-C dielectric insulator show a maximum field-effect mobility of 0.13 cm{sup 2}/V s (average mobility is 0.12 cm{sup 2}/V s) and on/off ratio is higher than 10{sup 7}. The current OFETs show great potential for applications in the next generation of transparent and flexible electronics.

    6. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

      2015-03-24

      With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

    7. Spin orbital torque driven magnetization switching in magnetic tunnel junction with inter-layer exchange coupling

      SciTech Connect (OSTI)

      Xu, Lei; Ma, Zhongshui; Wei, Dan

      2015-01-14

      The switching processes of elliptically shaped magnetic tunnel junction bits with the structure Ta/CoFeB/MgO/CoFeB have been studied by the micromagnetic models. By comparing the tunneling magneto-resistance minor and major loops calculated by our model with related experimental results, we found that the inter-layer exchange coupling between the two CoFeB layers and a reduced saturation magnetization M{sub s} distribution at the edge of the elliptical bit should be included. The chosen strength of the inter-layer exchange coupling also matches well with experimental observations. The current induced magnetization switching is generated from the spin Hall effect in the Ta layer. The critical switching currents calculated by our model are coincident with experiment. This shows the reliability of our micromagnetic model with the spin orbital torque term.

    8. Macroscopic quantum tunneling in small Josephson junctions in a magnetic field.

      SciTech Connect (OSTI)

      Ovchinnikov, Yu. N.; Barone, A.; Varlamov, A. A.; Materials Science Division; Max-Planck Inst. for Physics of Complex Systems; Landau Inst. Theoretical Physics; Univ. di Napoli Federico II; Coherentia-INFM, CNR

      2007-01-01

      We study the phenomenon of macroscopic quantum tunneling (MQT) in small Josephson junctions (JJ) with an externally applied magnetic field. The latter results in the appearance of the Fraunhofer type modulation of the current density along the barrier. The problem of MQT for a pointlike JJ is reduced to the motion of the quantum particle in the washboard potential. In the case of a finite size JJ under consideration, this problem corresponds to a MQT in a potential which itself, besides the phase, depends on space variables. The general expression for the crossover temperature To between thermally activated and macroscopic quantum tunneling regimes and the escaping time {tau}{sub esc} have been calculated.

    9. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

      SciTech Connect (OSTI)

      Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

      2015-03-24

      With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

    10. Interfacial electronic transport phenomena in single crystalline Fe-MgO-Fe thin barrier junctions

      SciTech Connect (OSTI)

      Gangineni, R. B.; Negulescu, B.; Baraduc, C.; Gaudin, G.

      2014-05-05

      Spin filtering effects in nano-pillars of Fe-MgO-Fe single crystalline magnetic tunnel junctions are explored with two different sample architectures and thin MgO barriers (thickness: 3–8 monolayers). The two architectures, with different growth and annealing conditions of the bottom electrode, allow tuning the quality of the bottom Fe/MgO interface. As a result, an interfacial resonance states (IRS) is observed or not depending on this interface quality. The IRS contribution, observed by spin polarized tunnel spectroscopy, is analyzed as a function of the MgO barrier thickness. Our experimental findings agree with theoretical predictions concerning the symmetry of the low energy (0.2 eV) interfacial resonance states: a mixture of Δ{sub 1}-like and Δ{sub 5}-like symmetries.

    11. Controllable 0 − π transition in iron pnictide superconductor junctions with a spacer of strong ferromagnet

      SciTech Connect (OSTI)

      Liu, S. Y.; Tao, Y. C. Ji, T. T.; Di, Y. S.; Hu, J. G.

      2014-03-17

      We investigate the control of 0−π transition in Josephson junctions consisting of a highly spin-polarized ferromagnet coupled to two iron pnictide superconductors (SCs). It is shown that, a 0−π transition as a function of interband coupling strength is always exhibited, which can be experimentally used to discriminate the s{sub ±}-wave pairing symmetry in the iron pnictide SCs from the s{sub ++}-wave one in MgB{sub 2}. By tuning the doping level in the s{sub ±}-wave SCs, one can vary the interband coupling strength so as to obtain the controllable 0−π transition. This device may be realized with current technologies and has practical use in Cooper pair spintronics and quantum information.

    12. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

      SciTech Connect (OSTI)

      Honjo, H. Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T.; Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N.; Ishihara, K.; Ohno, H.

      2014-05-07

      We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

    13. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

      SciTech Connect (OSTI)

      Gottwald, M.; Kan, J. J.; Lee, K.; Zhu, X.; Park, C.; Kang, S. H.

      2015-01-19

      Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ with tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.

    14. Giant electrocaloric effect in asymmetric ferroelectric tunnel junctions at room temperature

      SciTech Connect (OSTI)

      Liu, Yang Infante, Ingrid C.; Dkhil, Brahim; Lou, Xiaojie

      2014-02-24

      Room-temperature electrocaloric properties of Pt/BaTiO{sub 3}/SrRuO{sub 3} ferroelectric tunnel junctions (FTJs) are studied by using a multiscale thermodynamic model. It is found that there is a divergence in the adiabatic temperature change ΔT for the two opposite polarization orientations. This difference under a typical writing voltage of 3 V can reach over 1 K as the barrier thickness decreases. Thanks to the ultrahigh external stimulus, a giant electrocaloric effect (1.53 K/V) with ΔT being over 4.5 K can be achieved at room temperature, which demonstrates the perspective of FTJs as a promising solid-state refrigeration.

    15. Method utilizing laser-processing for the growth of epitaxial p-n junctions

      DOE Patents [OSTI]

      Young, R.T.; Narayan, J.; Wood, R.F.

      1979-11-23

      This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

    16. SU-E-T-426: Dose Delivery Accuracy in Breast Field Junction for Free Breath and Deep Inspiration Breath Hold Techniques

      SciTech Connect (OSTI)

      Epstein, D; Shekel, E; Levin, D

      2014-06-01

      Purpose: The purpose of this work was to verify the accuracy of the dose distribution along the field junction in a half beam irradiation technique for breast cancer patients receiving radiation to the breast or chest wall (CW) and the supraclavicular LN region for both free breathing and deep inspiration breath hold (DIBH) technique. Methods: We performed in vivo measurements for nine breast cancer patients receiving radiation to the breast/CW and to the supraclavicular LN region. Six patients were treated to the left breast/CW using DIBH technique and three patients were treated to the right breast/CW in free breath. We used five microMOSFET dosimeters: three located along the field junction, one located 1 cm above the junction and the fifth microMOSFET located 1 cm below the junction. We performed consecutive measurements over several days for each patient and compared the measurements to the TPS calculation (Eclipse, Varian). Results: The calculated and measured doses along the junction were 0.970.08 Gy and 1.020.14 Gy, respectively. Above the junction calculated and measured doses were 0.910.08 Gy and 0.980.09 Gy respectively, and below the junction calculated and measured doses were 1.700.15 Gy and 1.610.09 Gy, respectively. All differences were not statistically significant. When comparing calculated and measured doses for DIBH patients only, there was still no statistically significant difference between values for all dosimeter locations. Analysis was done using the Mann-Whitney Rank-Sum Test. Conclusion: We found excellent correlation between calculated doses from the TPS and measured skin doses at the junction of several half beam fields. Even for the DIBH technique, where there is more potential for variance due to depth of breath, there is no over or underdose along the field junction. This correlation validates the TPS, as well an accurate, reproducible patient setup.

    17. InGaP/GaAs Inverted Dual Junction Solar Cells For CPV Applications Using Metal-Backed Epitaxial Lift-Off

      SciTech Connect (OSTI)

      Bauhuis, Gerard J.; Mulder, Peter; Haverkamp, Erik J.; Schermer, John J.; Nash, Lee J.; Fulgoni, Dominic J. F.; Ballard, Ian M.; Duggan, Geoffrey

      2010-10-14

      The epitaxial lift-off (ELO) technique has been combined with inverted III-V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO platform we have first grown a GaAs single junction PV cell to establish the basic layer release process and cell processing steps followed by the growth, fabrication and test of an inverted InGaP/GaAs dual junction structure.

    18. Tip-contact related low-bias negative differential resistance and rectifying effects in benzeneporphyrinbenzene molecular junctions

      SciTech Connect (OSTI)

      Cheng, Jue-Fei; Zhou, Liping E-mail: leigao@suda.edu.cn; Liu, Man; Yan, Qiang; Han, Qin; Gao, Lei E-mail: leigao@suda.edu.cn

      2014-11-07

      The electronic transport properties of benzeneporphyrinbenzene (BPB) molecules coupled to gold (Au) electrodes were investigated. By successively removing the front-end Au atoms, several BPB junctions with different molecule-electrode contact symmetries were constructed. The calculated currentvoltage (IV) curves depended strongly on the contact configurations between the BPB molecules and the Au electrodes. In particular, a significant low-voltage negative differential resistance effect appeared at ?0.3 V in the junctions with pyramidal electrodes on both sides. Along with the breaking of this tip-contact symmetry, the low-bias negative differential resistance effect gradually disappeared. This tip-contact may be ideal for use in the design of future molecular devices because of its similarity with experimental processes.

    19. Communication: Electronic and transport properties of molecular junctions under a finite bias: A dual mean field approach

      SciTech Connect (OSTI)

      Liu, Shuanglong; Feng, Yuan Ping; Zhang, Chun; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543

      2013-11-21

      We show that when a molecular junction is under an external bias, its properties cannot be uniquely determined by the total electron density in the same manner as the density functional theory for ground state properties. In order to correctly incorporate bias-induced nonequilibrium effects, we present a dual mean field (DMF) approach. The key idea is that the total electron density together with the density of current-carrying electrons are sufficient to determine the properties of the system. Two mean fields, one for current-carrying electrons and the other one for equilibrium electrons can then be derived. Calculations for a graphene nanoribbon junction show that compared with the commonly used ab initio transport theory, the DMF approach could significantly reduce the electric current at low biases due to the non-equilibrium corrections to the mean field potential in the scattering region.

    20. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

      SciTech Connect (OSTI)

      Wu, Y.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q.; Hasan, T.

      2015-02-02

      We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5?nm. The dominant emission, detectable at ultralow (<1??A) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25??A current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter?junction-based UV-LEDs.

    1. Building America Technology Solutions for New and Existing Homes: New Insights for Improving the Designs of Flexible Duct Junction Boxes (Fact Sheet)

      Broader source: Energy.gov [DOE]

      IBACOS explored the relationships between pressure and physical configurations of flexible duct junction boxes by using computational fluid dynamics simulations to predict individual box parameters and total system pressure, thereby ensuring improved HVAC performance.

    2. Comments and responses on the Remedial Action Plan and site design for stabilization of the Inactive Uranium Mill Tailings Site, Grand Junction, Colorado. Revision 1

      SciTech Connect (OSTI)

      1994-01-01

      This report contains information concerning public comments and responses on the remedial action plan and site design for stabilization of the inactive uranium mill tailings site in Grand Junction, Colorado.

    3. Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

      SciTech Connect (OSTI)

      Qiu, Weicheng; Hu, Weida Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei; Cheng, Xiang'ai Wang, Rui

      2014-11-10

      In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

    4. Effect of Dual-Function Nano-Structured Silicon Oxide Thin Film on Multi-Junction Solar Cells

      SciTech Connect (OSTI)

      Yan, B.; Sivec, L.; Yue, G.; Jiang, C. S.; Yang, J.; Guha, S.

      2011-01-01

      We present our recent study of using nano-structured hydrogenated silicon oxide films (nc-SiO{sub x}:H) as a dual-function layer in multi-junction solar cells. The nc-SiO{sub x}:H films were deposited using very high frequency glow discharge of a SiH{sub 4} (or Si{sub 2}H{sub 6}), CO{sub 2}, PH{sub 3}, and H{sub 2} gas mixture. By optimizing deposition parameters, we obtained 'dual function' nc-SiO{sub x}:H material characterized by a conductivity suitable for use as an n layer and optical properties suitable for use as an inter-reflection layer. We tested the nc-SiO{sub x}:H by replacing the normal n-type material in the tunnel junction of a multi-junction structure. The advantage of the dual-function nc-SiO{sub x}:H layer is twofold; one is to simplify the cell structure, and the other is to reduce any optical loss associated with the inter-reflection layer. Quantum efficiency measurements show the gain in top cell current is equal to or greater than the loss in bottom cell current for a-Si:H/nc-Si:H structures. In addition, a thinner a-Si:H top cell with the nc-SiO{sub x}:H n layer improves the top-cell stability, thereby providing higher stabilized solar cell efficiency. We also used the dual-function layer between the middle and the bottom cells in a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. The gain in the middle cell current is {approx}1.0 mA/cm{sup 2}, leading to an initial active-area efficiency of 14.8%.

    5. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

      SciTech Connect (OSTI)

      Elliot, Alan J. E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z. E-mail: jwu@ku.edu; Yu, Haifeng; Zhao, Shiping

      2014-07-15

      Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ?1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

    6. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

      DOE Patents [OSTI]

      Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

      2001-01-01

      A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

    7. Superconducting transport in single and parallel double InAs quantum dot Josephson junctions with Nb-based superconducting electrodes

      SciTech Connect (OSTI)

      Baba, Shoji Sailer, Juergen; Deacon, Russell S.; Oiwa, Akira; Shibata, Kenji; Hirakawa, Kazuhiko; Tarucha, Seigo

      2015-11-30

      We report conductance and supercurrent measurements for InAs single and parallel double quantum dot Josephson junctions contacted with Nb or NbTiN superconducting electrodes. Large superconducting gap energy, high critical field, and large switching current are observed, all reflecting the features of Nb-based electrodes. For the parallel double dots, we observe an enhanced supercurrent when both dots are on resonance, which may reflect split Cooper pair tunneling.

    8. Movement of the boundary of a p-n junction in GaAs:Si under gyrotronic irradiation

      SciTech Connect (OSTI)

      Sukach, G. A.; Kidalov, V. V.

      2011-12-15

      It is shown that, by using a gyratron, it is possible to control the position of a p-n junction in an already fabricated light-emitting structure. A shift of the compensated region in the emitting structure based on GaAs:Si is caused by the motion of impurities in the field of thermoelastic stresses appearing in the course of sample cooling after gyrotronic irradiation.

    9. Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

      SciTech Connect (OSTI)

      Kanai, S.; Nakatani, Y.; Yamanouchi, M.; Ikeda, S.; Sato, H.; Matsukura, F.; Ohno, H.

      2014-05-26

      We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone.

    10. Technical basis for radiological release of Grand Junction Office Building 2. Volume 1, dose assessment

      SciTech Connect (OSTI)

      Morris, R.; Warga, J.; Thorne, D.

      1997-07-01

      Building 2 on the US Department of Energy (DOE) Grand Junction Office (GJO) site is part of the GJO Remedial Action Program (GJORAP). During evaluation of Building 2 for determination of radiological release disposition, some inaccessible surface contamination measurements were detected to be greater than the generic surface contamination guidelines of DOE Order 5400.5 (which are functionally equivalent to US Nuclear Regulatory Commission [NRC] Regulatory Guide 1.86). Although the building is nominal in size, it houses the site telecommunications system, that is critical to continued GJO operations, and demolition is estimated at $1.9 million. Because unrestricted release under generic surface contamination guidelines is cost-prohibitive, supplemental standards consistent with DOE Order 5400.5 are being pursued. This report describes measurements and dose analysis modeling efforts to evaluate the radiation dose to members of the public who might occupy or demolish Building 2, a 2,480 square-foot (ft) building constructed in 1944. The north portion of the building was used as a shower facility for Manhattan Project uranium-processing mill workers and the south portion was a warehouse. Many originally exposed surfaces are no longer accessible for contamination surveys because expensive telecommunications equipment have been installed on the floors and mounted on panels covering the walls. These inaccessible surfaces are contaminated above generic contamination limits.

    11. Development of Ta-based Superconducting Tunnel Junction X-ray Detectors for Fluorescence XAS

      SciTech Connect (OSTI)

      Friedrich, S; Drury, O; Hall, J; Cantor, R

      2009-09-23

      We are developing superconducting tunnel junction (STJ) soft X-ray detectors for chemical analysis of dilute samples by fluorescence-detected X-ray absorption spectroscopy (XAS). Our 36-pixel Nb-based STJ spectrometer covers a solid angle {Omega}/4{pi} {approx} 10{sup -3}, offers an energy resolution of {approx}10-20 eV FWHM for energies up to {approx}1 keV, and can be operated at total count rates of {approx}10{sup 6} counts/s. For increased quantum efficiency and cleaner response function, we have now started the development of Ta-based STJ detector arrays. Initial devices modeled after our Nb-based STJs have an energy resolution below 10 eV FWHM for X-ray energies below 1 keV, and pulse rise time discrimination can be used to improve their response function for energies up to several keV. We discuss the performance of the Ta-STJs and outline steps towards the next-generation of large STJ detector arrays with higher sensitivity.

    12. New Insights for Improving the Designs of Flexible Duct Junction Boxes (Fact Sheet)

      SciTech Connect (OSTI)

      Not Available

      2014-01-01

      IBACOS explored the relationships between pressure and physical configurations of flexible duct junction boxes by using computational fluid dynamics (CFD) simulations to predict individual box parameters and total system pressure, thereby ensuring improved HVAC performance. Current Air Conditioning Contractors of America (ACCA) guidance (Group 11, Appendix 3, ACCA Manual D, Rutkowski 2009) allows for unconstrained variation in the number of takeoffs, box sizes, and takeoff locations. The only variables currently used in selecting an equivalent length (EL) are velocity of air in the duct and friction rate, given the first takeoff is located at least twice its diameter away from the inlet. This condition does not account for other factors impacting pressure loss across these types of fittings. For each simulation, the IBACOS team converted pressure loss within a box to an EL to compare variation in ACCA Manual D guidance to the simulated variation. IBACOS chose cases to represent flows reasonably correlating to flows typically encountered in the field and analyzed differences in total pressure due to increases in number and location of takeoffs, box dimensions, and velocity of air, and whether an entrance fitting is included. The team also calculated additional balancing losses for all cases due to discrepancies between intended outlet flows and natural flow splits created by the fitting. In certain asymmetrical cases, the balancing losses were significantly higher than symmetrical cases where the natural splits were close to the targets. Thus, IBACOS has shown additional design constraints that can ensure better system performance.

    13. Plasma Separation Process: Betacell (BCELL) code: User's manual. [Bipolar barrier junction

      SciTech Connect (OSTI)

      Taherzadeh, M.

      1987-11-13

      The emergence of clearly defined applications for (small or large) amounts of long-life and reliable power sources has given the design and production of betavoltaic systems a new life. Moreover, because of the availability of the plasma separation program, (PSP) at TRW, it is now possible to separate the most desirable radioisotopes for betacell power generating devices. A computer code, named BCELL, has been developed to model the betavoltaic concept by utilizing the available up-to-date source/cell parameters. In this program, attempts have been made to determine the betacell energy device maximum efficiency, degradation due to the emitting source radiation and source/cell lifetime power reduction processes. Additionally, comparison is made between the Schottky and PN junction devices for betacell battery design purposes. Certain computer code runs have been made to determine the JV distribution function and the upper limit of the betacell generated power for specified energy sources. A Ni beta emitting radioisotope was used for the energy source and certain semiconductors were used for the converter subsystem of the betacell system. Some results for a Promethium source are also given here for comparison. 16 refs.

    14. Continuity of monolayer-bilayer junctions for localization of lipid raft microdomains in model membranes

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Ryu, Yong -Sang; Wittenberg, Nathan J.; Suh, Jeng -Hun; Lee, Sang -Wook; Sohn, Youngjoo; Oh, Sang -Hyun; Parikh, Atul N.; Lee, Sin -Doo

      2016-05-27

      We show that the selective localization of cholesterol-rich domains and associated ganglioside receptors prefer to occur in the monolayer across continuous monolayer-bilayer junctions (MBJs) in supported lipid membranes. For the MBJs, glass substrates were patterned with poly(dimethylsiloxane) (PDMS) oligomers by thermally-assisted contact printing, leaving behind 3 nm-thick PDMS patterns. The hydrophobicity of the transferred PDMS patterns was precisely tuned by the stamping temperature. Lipid monolayers were formed on the PDMS patterned surface while lipid bilayers were on the bare glass surface. Due to the continuity of the lipid membranes over the MBJs, essentially free diffusion of lipids was allowed betweenmore » the monolayer on the PDMS surface and the upper leaflet of the bilayer on the glass substrate. The preferential localization of sphingomyelin, ganglioside GM1 and cholesterol in the monolayer region enabled to develop raft microdomains through coarsening of nanorafts. Furthermore, our methodology provides a simple and effective scheme of non-disruptive manipulation of the chemical landscape associated with lipid phase separations, which leads to more sophisticated applications in biosensors and as cell culture substrates.« less

    15. Grand Junction Projects Office Remedial Action Project Building 2 public dose evaluation. Final report

      SciTech Connect (OSTI)

      Morris, R.

      1996-05-01

      Building 2 on the U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) site, which is operated by Rust Geotech, is part of the GJPO Remedial Action Program. This report describes measurements and modeling efforts to evaluate the radiation dose to members of the public who might someday occupy or tear down Building 2. The assessment of future doses to those occupying or demolishing Building 2 is based on assumptions about future uses of the building, measured data when available, and predictive modeling when necessary. Future use of the building is likely to be as an office facility. The DOE sponsored program, RESRAD-BUILD, Version. 1.5 was chosen for the modeling tool. Releasing the building for unrestricted use instead of demolishing it now could save a substantial amount of money compared with the baseline cost estimate because the site telecommunications system, housed in Building 2, would not be disabled and replaced. The information developed in this analysis may be used as part of an as low as reasonably achievable (ALARA) cost/benefit determination regarding disposition of Building 2.

    16. Nonlinear vs. bolometric radiation response and phonon thermal conductance in graphene-superconductor junctions

      SciTech Connect (OSTI)

      Vora, Heli; Nielsen, Bent; Du, Xu [Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York (United States)

      2014-02-21

      Graphene is a promising candidate for building fast and ultra-sensitive bolometric detectors due to its weak electron-phonon coupling and low heat capacity. In order to realize a practical graphene-based bolometer, several important issues, including the nature of radiation response, coupling efficiency to the radiation and the thermal conductance need to be carefully studied. Addressing these issues, we present graphene-superconductor junctions as a viable option to achieve efficient and sensitive bolometers, with the superconductor contacts serving as hot electron barriers. For a graphene-superconductor device with highly transparent interfaces, the resistance readout in the presence of radio frequency radiation is dominated by non-linear response. On the other hand, a graphene-superconductor tunnel device shows dominantly bolometric response to radiation. For graphene devices fabricated on SiO{sub 2} substrates, we confirm recent theoretical predictions of T{sup 2} temperature dependence of phonon thermal conductance in the presence of disorder in the graphene channel at low temperatures.

    17. Interplay between interband coupling and ferromagnetism in iron pnictide superconductor/ferromagnet/iron pnictide superconductor junctions

      SciTech Connect (OSTI)

      Liu, S. Y.; Tao, Y. C.; Hu, J. G.

      2014-08-28

      An extended eight-component Bogoliubov-de Gennes equation is applied to study the Josephson effect between iron-based superconductors (SCs) with s{sub }-wave pairing symmetry, separated by an ferromagnet (FM). The feature of damped oscillations of critical Josephson current as a function of FM thickness, the split of the peaks induced by the interband coupling is much different from that for the junction with the s{sub }-wave SCs replaced by s{sub ++}-wave ones. In particular, a 0?? transition as a function of interband coupling strength ? is found to always exhibit with the corresponding dip shifting toward the larger ? due to enhancing the spin polarization in the FM, while there exits no 0?? transition for the SC with s{sub ++}-wave pairing symmetry. The two features can be used to identify the pairing symmetry in the iron pnictide SC different from the s{sub ++}-wave one in MgB{sub 2}. Experimentally, by adjusting the doping level in the s{sub }-wave SCs, one can vary ?.

    18. Bottom head to shell junction assembly for a boiling water nuclear reactor

      DOE Patents [OSTI]

      Fife, Alex Blair; Ballas, Gary J.

      1998-01-01

      A bottom head to shell junction assembly which, in one embodiment, includes an annular forging having an integrally formed pump deck and shroud support is described. In the one embodiment, the annular forging also includes a top, cylindrical shaped end configured to be welded to one end of the pressure vessel cylindrical shell and a bottom, conical shaped end configured to be welded to the disk shaped bottom head. Reactor internal pump nozzles also are integrally formed in the annular forging. The nozzles do not include any internal or external projections. Stubs are formed in each nozzle opening to facilitate welding a pump housing to the forging. Also, an upper portion of each nozzle opening is configured to receive a portion of a diffuser coupled to a pump shaft which extends through the nozzle opening. Diffuser openings are formed in the integral pump deck to provide additional support for the pump impellers. The diffuser opening is sized so that a pump impeller can extend at least partially therethrough. The pump impeller is connected to the pump shaft which extends through the nozzle opening.

    19. Bottom head to shell junction assembly for a boiling water nuclear reactor

      DOE Patents [OSTI]

      Fife, A.B.; Ballas, G.J.

      1998-02-24

      A bottom head to shell junction assembly which, in one embodiment, includes an annular forging having an integrally formed pump deck and shroud support is described. In the one embodiment, the annular forging also includes a top, cylindrical shaped end configured to be welded to one end of the pressure vessel cylindrical shell and a bottom, conical shaped end configured to be welded to the disk shaped bottom head. Reactor internal pump nozzles also are integrally formed in the annular forging. The nozzles do not include any internal or external projections. Stubs are formed in each nozzle opening to facilitate welding a pump housing to the forging. Also, an upper portion of each nozzle opening is configured to receive a portion of a diffuser coupled to a pump shaft which extends through the nozzle opening. Diffuser openings are formed in the integral pump deck to provide additional support for the pump impellers. The diffuser opening is sized so that a pump impeller can extend at least partially therethrough. The pump impeller is connected to the pump shaft which extends through the nozzle opening. 5 figs.

    20. InGaAsN/GaAs heterojunction for multi-junction solar cells

      DOE Patents [OSTI]

      Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

      2001-01-01

      An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

    1. Laser annealing of ion implanted CZ silicon for solar cell junction formation. Quarterly report No. 1

      SciTech Connect (OSTI)

      Katzeff, J. S.

      1980-07-01

      A project to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation on solar cells is described. A Q-switched Nd:Glass laser system is used operating in the 1064 (regular) and 532 (with frequency doubler) nm wavelengths. The laser output is in excess of 30 joules with a 20 to 50 ns pulse duration. Material used in this investigation is 3-inch diameter CZ silicon, P-type 0.014 inches thick, 10..cap omega..-cm resistivity, <100> orientation. Three wafer surface conditions are being evaluated in this pulse annealing investigation: chem-polished, texture etched, and flash etched. Annealing was performed with and without beam homogenization. Both modes showed excellent lattice recovery from the implant-induced damage as analyzed using Rutherford backscattering techniques. Homogenization of the beam was performed using a fused silica rod configured with a 90/sup 0/ bend. The unhomogenized annealing was performed using a plano-concave lens. Fabrication of laser annealed cells using both modes is forthcoming.

    2. Trial Run of a Junction-Box Attachment Test for Use in Photovoltaic Module Qualification (Presentation)

      SciTech Connect (OSTI)

      Miller, D.; Deibert, S.; Wohlgemuth, J.

      2014-06-01

      Engineering robust adhesion of the junction-box (j-box) is a hurdle typically encountered by photovoltaic (PV) module manufacturers during product development and manufacturing process control. There are historical incidences of adverse effects (e.g., fires), caused when the j-box/adhesive/module system has failed in the field. The addition of a weight to the j-box during the 'damp-heat', 'thermal-cycle', or 'creep' tests within the IEC qualification protocol is proposed to verify the basic robustness of the adhesion system. The details of the proposed test are described, in addition to a trial run of the test procedure. The described experiments examine 4 moisture-cured silicones, 4 foam tapes, and a hot-melt adhesive used in conjunction with glass, KPE, THV, and TPE substrates. For the purpose of validating the experiment, j-boxes were adhered to a substrate, loaded with a prescribed weight, and then subjected to aging. The replicate mock-modules were aged in an environmental chamber (at 85 deg C/85% relative humidity for 1000 hours; then 100 degrees C/<10% relative humidity for 200 hours) or fielded in Golden, Miami, and Phoenix for 1 year. Attachment strength tests, including pluck and shear test geometries, were also performed on smaller component specimens.

    3. Examination of a Junction-Box Adhesion Test for Use in Photovoltaic Module Qualification (Presentation)

      SciTech Connect (OSTI)

      Miller, D. C.; Wohlgemuth, J. H.

      2012-08-01

      Engineering robust adhesion of the junction-box (j-box) is a hurdle typically encountered by photovoltaic (PV) module manufacturers during product development. There are historical incidences of adverse effects (e.g., fires) caused when the j-box/adhesive/module system has failed in the field. The addition of a weight to the j-box during the 'damp heat' IEC qualification test is proposed to verify the basic robustness of its adhesion system. The details of the proposed test will be described, in addition to the preliminary results obtained using representative materials and components. The described discovery experiments examine moisture-cured silicone, foam tape, and hot-melt adhesives used in conjunction with PET or glass module 'substrates.' To be able to interpret the results, a set of material-level characterizations was performed, including thermogravimetric analysis, differential scanning calorimetry, and dynamic mechanical analysis. PV j-boxes were adhered to a substrate, loaded with a prescribed weight, and then placed inside an environmental chamber (at 85C, 85% relative humidity). Some systems did not remain attached through the discovery experiments. Observed failure modes include delamination (at the j-box/adhesive or adhesive/substrate interface) and phase change/creep. The results are discussed in the context of the application requirements, in addition to the plan for the formal experiment supporting the proposed modification to the qualification test.

    4. Examination of a Junction-Box Adhesion Test for Use in Photovoltaic Module Qualification: Preprint

      SciTech Connect (OSTI)

      Miller, D. C.; Wohlgemuth, J. H.

      2012-08-01

      Engineering robust adhesion of the junction-box (j-box) is a hurdle typically encountered by photovoltaic (PV) module manufacturers during product development. There are historical incidences of adverse effects (e.g., fires) caused when the j-box/adhesive/module system has failed in the field. The addition of a weight to the j-box during the 'damp heat' IEC qualification test is proposed to verify the basic robustness of its adhesion system. The details of the proposed test will be described, in addition to the preliminary results obtained using representative materials and components. The described discovery experiments examine moisture-cured silicone, foam tape, and hot-melt adhesives used in conjunction with PET or glass module 'substrates.' To be able to interpret the results, a set of material-level characterizations was performed, including thermogravimetric analysis, differential scanning calorimetry, and dynamic mechanical analysis. PV j-boxes were adhered to a substrate, loaded with a prescribed weight, and then placed inside an environmental chamber (at 85C, 85% relative humidity). Some systems did not remain attached through the discovery experiments. Observed failure modes include delamination (at the j-box/adhesive or adhesive/substrate interface) and phase change/creep. The results are discussed in the context of the application requirements, in addition to the plan for the formal experiment supporting the proposed modification to the qualification test.

    5. Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

      SciTech Connect (OSTI)

      Andrieu, S. Bonell, F.; Hauet, T.; Montaigne, F.; Lefevre, P.; Bertran, F.

      2014-05-07

      The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe{sub 1−x}V{sub x} electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe{sub 1−X}Co{sub x}/MgO/Fe{sub 1−X}Co{sub x} (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty Δ1 minority spin state towards the Fermi level.

    6. Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions

      SciTech Connect (OSTI)

      Jeong, J. H.; Endoh, T.; Kim, Y.; Kim, W. K.; Park, S. O.

      2014-05-07

      To identify the degradation mechanism in magnetic tunnel junctions (MTJs) using hydrogen, the properties of the MTJs were measured by applying an additional hydrogen etch process and a hydrogen plasma process to the patterned MTJs. In these studies, an additional 50?s hydrogen etch process caused the magnetoresistance (MR) to decrease from 103% to 14.7% and the resistance (R) to increase from 6.5?k? to 39?k?. Moreover, an additional 500?s hydrogen plasma process decreased the MR from 103% to 74% and increased R from 6.5?k? to 13.9?k?. These results show that MTJs can be damaged by the hydrogen plasma process as well as by the hydrogen etch process, as the atomic bonds in MgO may break and react with the exposed hydrogen gas. Compounds such as MgO hydrate very easily. We also calculated the damaged layer width (DLW) of the patterned MTJs after the hydrogen etching and plasma processes, to evaluate the downscaling limitations of spin-transfer-torque magnetic random-access memory (STT-MRAM) devices. With these calculations, the maximum DLWs at each side of the MTJ, generated by the etching and plasma processes, were 23.8?nm and 12.8?nm, respectively. This result validates that the hydrogen-based MTJ patterning processes cannot be used exclusively in STT-MRAMs beyond 20?nm.

    7. Final report of the radiological release survey of Building 30B at the Grand Junction Office Facility

      SciTech Connect (OSTI)

      Krauland, P.A.; Corle, S.G.

      1997-09-01

      The U.S. Department of Energy (DOE) Grand Junction Office (GJO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore concentrates and mill tailings during vanadium refining activities of the Manhattan Engineer District, and during sampling, assaying, pilot milling, storage, and brokerage activities conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJO Remedial Action Project (GJORAP) to clean up and restore the facility lands, improvements, and underlying aquifer. WASTREN-Grand Junction is the site contractor for the facility and the remedial action contractor for GJORAP. Building 30B and the underlying soil were found not to be radiologically contaminated; therefore, the building can be released for unrestricted use. Placards have been placed at the building entrances indicating the completion of the radiological release survey and prohibiting the introduction of any radioactive materials within the building without written approvals from the GJO Facilities Operations Manager. This document was prepared in response to a DOE-GJO request for an individual final release report for each GJO building.

    8. Final report of the decontamination and decommissioning of Building 34 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Widdop, M.R.

      1996-08-01

      The U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) occupies a 61.7 acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the Grand Junction Projects Office Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, was also the remedial action contractor. Building 34 was radiologically contaminated and the building was demolished in 1996. The soil area within the footprint of the building was analyzed and found to be not contaminated. The area can be released for unlimited exposure and unrestricted use. This document was prepared in response to a DOE request for an individual closeout report for each contaminated GJPO building.

    9. U.S. Department of Energy Grand Junction Projects Office site environmental report for calendar year 1995

      SciTech Connect (OSTI)

      1996-05-01

      This report presents information pertaining to environmental activities conducted during calendar year 1995 at the US Department of Energy (DOE) Grand Junction Projects Office (GJPO) facility in Grand Junction, Colorado. Environmental activities conducted at the GJPO facility during 1995 were associated with mixed-waste treatment, site remediation, off-site dose modeling, and radiological and nonradiological monitoring. As part of the GJPO Mixed-Waste Treatment Program, on-site treatability studies were conducted in 1995 that made use of pilot-scale evaporative-oxidation and thermal-desorption units and bench-scale stabilization. DOE-GJPO used some of its own mixed-waste as well as samples received from other DOE sites for these treatability studies. These studies are expected to conclude in 1996. Removal of radiologically contaminated materials from GJPO facility buildings was conducted under the provisions of the Grand Junction Projects Office Remedial Action Project. Remediation activities included the removal of 394 metric tons of contaminated material from Buildings 18 and 28 and revegetation activities on the GJPO site; remediation was conducted in compliance with applicable permits.

    10. Final report of the decontamination and decommissioning of the exterior land areas at the Grand Junction Projects Office facility

      SciTech Connect (OSTI)

      Widdop, M.R.

      1995-09-01

      The US Department of Energy (DOE) Grand Junction Projects Office (GJPO) facility occupies approximately 56.4 acres (22.8 hectares) along the Gunnison River near Grand Junction, Colorado. The site was contaminated with uranium ore and mill tailings during uranium-refining activities conducted by the Manhattan Engineer District and during pilot-milling experiments conducted for the US Atomic Energy Commission`s (AEC`s) domestic uranium procurement program. The GJPO facility was the collection and assay point for AEC uranium and vanadium oxide purchases until the early 1970s. The DOE Decontamination and Decommissioning Program sponsored the Grand Junction Projects Office Remedial Action Project (GJPORAP) to remediate the facility lands, site improvements, and the underlying aquifer. The site contractor, Rust Geotech, was the Remedial Action Contractor for GJPORAP. The exterior land areas of the facility assessed as contaminated have been remediated in accordance with identified standards and can be released for unrestricted use. Restoration of the aquifer will be accomplished through the natural flushing action of the aquifer during the next 50 to 80 years. The remediation of the DOE-GJPO facility buildings is ongoing and will be described in a separate report.

    11. Final report of the decontamination and decommissioning of Building 44 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Widdop, M.R.

      1996-07-01

      The U.S. Department of Energy (DOE) Junction Projects Office (GJPO) occupies a 61.7 acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the Grand Junction Projects Office Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, is also the remedial action contractor. Building 44 was radiologically contaminated and the building was demolished in 1994. The soil area within the footprint of the building was not contaminated; it complies with the identified standards and the area can be released for unlimited exposure and unrestricted use. This document was prepared in response to a DOE request for an individual final report for each contaminated GJPO building.

    12. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

      SciTech Connect (OSTI)

      Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

      2006-01-01

      Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

    13. Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS{sub 2} films

      SciTech Connect (OSTI)

      Sutar, Surajit; Agnihotri, Pratik; Comfort, Everett; Ung Lee, Ji; Taniguchi, T.; Watanabe, K.

      2014-03-24

      Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS{sub 2}. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS{sub 2} flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS{sub 2} flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4{sub kB}T is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.

    14. Supine Craniospinal Irradiation Using a Proton Pencil Beam Scanning Technique Without Match Line Changes for Field Junctions

      SciTech Connect (OSTI)

      Lin, Haibo Ding, Xuanfeng; Kirk, Maura; Liu, Haoyang; Zhai, Huifang; Hill-Kayser, Christine E.; Lustig, Robert A.; Tochner, Zelig; Both, Stefan; McDonough, James

      2014-09-01

      Purpose: To propose and validate a craniospinal irradiation approach using a proton pencil beam scanning technique that overcomes the complexity of the planning associated with feathering match lines. Methods and Materials: Ten craniospinal irradiation patients had treatment planned with gradient dose optimization using the proton pencil beam scanning technique. The robustness of the plans was evaluated by shifting the isocenter of each treatment field by ±3 mm in the longitudinal direction and was compared with the original nonshifted plan with metrics of conformity number, homogeneity index, and maximal cord doses. An anthropomorphic phantom study using film measurements was carried out on a plan with 5-cm junction length. To mimic setup errors in the phantom study, fields were recalculated with isocenter shifts of 1, 3, 5, and 10 mm longitudinally, and compared with the original plans and measurements. Results: Uniform dose coverage to the entire target volumes was achieved using the gradient optimization approach with averaged junction lengths of 6.7 ± 0.5 cm. The average conformity number and homogeneity index equaled 0.78 ± 0.03 and 1.09 ± 0.01, respectively. Setup errors of 3 mm per field (6 mm in worst-case scenario) caused on average 4.6% lower conformity number 2.5% higher homogeneity index and maximal cord dose of 4216.1 ± 98.2 cGy. When the junction length was 5 cm or longer, setup errors of 6 mm resulted in up to 12% dosimetric deviation. Consistent results were reached between film measurements and planned dose profiles in the junction area. Conclusions: Longitudinal setup errors directly reduce the dosimetric accuracy of the proton craniospinal irradiation treatment with matched proton pencil beam scanning fields. The reported technique creates a slow dose gradient in the junction area, which makes the treatment more robust to longitudinal setup errors compared to conventional feathering methods.

    15. Electromagnetic model for near-field microwave microscope with atomic resolution: Determination of tunnel junction impedance

      SciTech Connect (OSTI)

      Reznik, Alexander N.

      2014-08-25

      An electrodynamic model is proposed for the tunneling microwave microscope with subnanometer space resolution as developed by Lee et al. [Appl. Phys. Lett. 97, 183111 (2010)]. Tip-sample impedance Z{sub a} was introduced and studied in the tunneling and non-tunneling regimes. At tunneling breakdown, the microwave current between probe and sample flows along two parallel channels characterized by impedances Z{sub p} and Z{sub t} that add up to form overall impedance Z{sub a}. Quantity Z{sub p} is the capacitive impedance determined by the near field of the probe and Z{sub t} is the impedance of the tunnel junction. By taking into account the distance dependences of effective tip radius r{sub 0}(z) and tunnel resistance R{sub t}(z)?=?Re[Z{sub t}(z)], we were able to explain the experimentally observed dependences of resonance frequency f{sub r}(z) and quality factor Q{sub L}(z) of the microscope. The obtained microwave resistance R{sub t}(z) and direct current tunnel resistance R{sub t}{sup dc}(z) exhibit qualitatively similar behavior, although being largely different in both magnitude and the characteristic scale of height dependence. Interpretation of the microwave images of the atomic structure of test samples proved possible by taking into account the inductive component of tunnel impedance ImZ{sub t}?=??L{sub t}. Relation ?L{sub t}/R{sub t}???0.235 was obtained.

    16. Expert Consensus Contouring Guidelines for Intensity Modulated Radiation Therapy in Esophageal and Gastroesophageal Junction Cancer

      SciTech Connect (OSTI)

      Wu, Abraham J.; Bosch, Walter R.; Chang, Daniel T.; Hong, Theodore S.; Jabbour, Salma K.; Kleinberg, Lawrence R.; Mamon, Harvey J.; Thomas, Charles R.; Goodman, Karyn A.

      2015-07-15

      Purpose/Objective(s): Current guidelines for esophageal cancer contouring are derived from traditional 2-dimensional fields based on bony landmarks, and they do not provide sufficient anatomic detail to ensure consistent contouring for more conformal radiation therapy techniques such as intensity modulated radiation therapy (IMRT). Therefore, we convened an expert panel with the specific aim to derive contouring guidelines and generate an atlas for the clinical target volume (CTV) in esophageal or gastroesophageal junction (GEJ) cancer. Methods and Materials: Eight expert academically based gastrointestinal radiation oncologists participated. Three sample cases were chosen: a GEJ cancer, a distal esophageal cancer, and a mid-upper esophageal cancer. Uniform computed tomographic (CT) simulation datasets and accompanying diagnostic positron emission tomographic/CT images were distributed to each expert, and the expert was instructed to generate gross tumor volume (GTV) and CTV contours for each case. All contours were aggregated and subjected to quantitative analysis to assess the degree of concordance between experts and to generate draft consensus contours. The panel then refined these contours to generate the contouring atlas. Results: The κ statistics indicated substantial agreement between panelists for each of the 3 test cases. A consensus CTV atlas was generated for the 3 test cases, each representing common anatomic presentations of esophageal cancer. The panel agreed on guidelines and principles to facilitate the generalizability of the atlas to individual cases. Conclusions: This expert panel successfully reached agreement on contouring guidelines for esophageal and GEJ IMRT and generated a reference CTV atlas. This atlas will serve as a reference for IMRT contours for clinical practice and prospective trial design. Subsequent patterns of failure analyses of clinical datasets using these guidelines may require modification in the future.

    17. Performance evaluation of ZnO–CuO hetero junction solid state room temperature ethanol sensor

      SciTech Connect (OSTI)

      Yu, Ming-Ru; Suyambrakasam, Gobalakrishnan; Wu, Ren-Jang; Department of Nanotechnology, School of Interdisciplinary Courses, Noorul Islam Centre for Higher Education, Noorul Islam University, Kumaracoil 629180, Tamil Nadu ; Chavali, Murthy; Department of Applied Chemistry, Providence University, 200 Chungchi Road, Shalu, Taichung Hsien 433, Taiwan, R.O.C

      2012-07-15

      Graphical abstract: Sensor response (resistance) curves of time were changed from 150 ppm to 250 ppm alcohol concentration of ZnO–CuO 1:1. The response and recovery times were measured to be 62 and 83 s, respectively. The sensing material ZnO–CuO is a high potential alcohol sensor which provides a simple, rapid and highly sensitive alcohol gas sensor operating at room temperature. Highlights: ► The main advantages of the ethanol sensor are as followings. ► Novel materials ZnO–CuO ethanol sensor. ► The optimized ZnO–CuO hetero contact system. ► A good sensor response and room working temperature (save energy). -- Abstract: A semiconductor ethanol sensor was developed using ZnO–CuO and its performance was evaluated at room temperature. Hetero-junction sensor was made of ZnO–CuO nanoparticles for sensing alcohol at room temperature. Nanoparticles were prepared by hydrothermal method and optimized with different weight ratios. Sensor characteristics were linear for the concentration range of 150–250 ppm. Composite materials of ZnO–CuO were characterized using X-ray diffraction (XRD), temperature-programmed reduction (TPR) and high-resolution transmission electron microscopy (HR-TEM). ZnO–CuO (1:1) material showed maximum sensor response (S = R{sub air}/R{sub alcohol}) of 3.32 ± 0.1 toward 200 ppm of alcohol vapor at room temperature. The response and recovery times were measured to be 62 and 83 s, respectively. The linearity R{sup 2} of the sensor response was 0.9026. The sensing materials ZnO–CuO (1:1) provide a simple, rapid and highly sensitive alcohol gas sensor operating at room temperature.

    18. Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

      SciTech Connect (OSTI)

      Wang, Shouguo; Ward, R. C. C.; Zhang, Xiaoguang; Kohn, A.; Ma, Q. L.; Zhang, J.; Liu, H. F.; Han, Prof. X. F.

      2012-01-01

      Following predictions by first-principles theory of huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), measured magnetoresistance (MR) ratio about 200% at room temperature (RT) have been reported in MgO-based epitaxial MTJs. Recently, MR ratio of about 600% has been reported at RT in MgO-based amorphous MTJs with core structure of CoFeB/MgO/CoFeB grown by magnetron sputtering with amorphous CoFeB layers. The sputtered CoFeB/MgO/CoFeB MTJs shows a great potential application in spintronic devices. Although epitaxial structure will probably not be used in devices, it remains an excellent model system to compare theoretical calculations with experimental results and to enhance our understanding of the spin dependent tunneling. Both theoretical calculations and experimental results clearly indicate that the interfacial structure plays a crucial role on coherent tunneling across single crystalMgO barrier, especially in epitaxial MgO-based MTJs grown by molecular beam epitaxy (MBE). Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism have been used for interface characterization. However, no consistent viewpoint has been reached, and this is still an open issue. In this article, recent studies on the interface characterization in MgO-based epitaxial MTJs will be introduced, with a focus on research by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and spin dependent tunneling spectroscopy.

    19. Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

      SciTech Connect (OSTI)

      Yin, Y. W.; Raju, M.; Li, Qi; Hu, W. J.; Burton, J. D.; Gruverman, A.; Tsymbal, E. Y.; Kim, Y.-M.; Borisevich, A. Y.; Pennycook, S. J.; Yang, S. M.; Noh, T. W.; Li, X. G.; Zhang, Z. D.

      2015-05-07

      As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO{sub 3}/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3}/La{sub 0.5}Ca{sub 0.5}MnO{sub 3} /La{sub 0.7}Sr{sub 0.3}MnO{sub 3} MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO{sub 3} is ferroelectric and La{sub 0.5}Ca{sub 0.5}MnO{sub 3} is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

    20. SU-E-T-226: Junction Free Craniospinal Irradiation in Linear Accelerator Using Volumetric Modulated Arc Therapy : A Novel Technique Using Dose Tapering

      SciTech Connect (OSTI)

      Sarkar, B; Roy, S; Paul, S; Munshi, A; Roy, Shilpi; Jassal, K; Ganesh, T; Mohanti, BK

      2014-06-01

      Purpose: Spatially separated fields are required for craniospinal irradiation due to field size limitation in linear accelerator. Field junction shits are conventionally done to avoid hot or cold spots. Our study was aimed to demonstrate the feasibility of junction free irradiation plan of craniospinal irradiation (CSI) for Meduloblastoma cases treated in linear accelerator using Volumetric modulated arc therapy (VMAT) technique. Methods: VMAT was planned using multiple isocenters in Monaco V 3.3.0 and delivered in Elekta Synergy linear accelerator. A full arc brain and 40 posterior arc spine fields were planned using two isocentre for short (<1.3 meter height ) and 3 isocentres for taller patients. Unrestricted jaw movement was used in superior-inferior direction. Prescribed dose to PTV was achieved by partial contribution from adjacent beams. A very low dose gradient was generated to taper the isodoses over a long length (>10 cm) at the conventional field junction. Results: In this primary study five patients were planned and three patients were delivered using this novel technique. As the dose contribution from the adjacent beams were varied (gradient) to create a complete dose distribution, therefore there is no specific junction exists in the plan. The junction were extended from 1014 cm depending on treatment plan. Dose gradient were 9.62.3% per cm for brain and 7.91.7 % per cm for spine field respectively. Dose delivery error due to positional inaccuracy was calculated for brain and spine field for 1mm, 2mm, 3mm and 5 mm were 1%0.8%, 2%1.6%, 2.8%2.4% and 4.3%4% respectively. Conclusion: Dose tapering in junction free CSI do not require a junction shift. Therefore daily imaging for all the field is also not essential. Due to inverse planning dose to organ at risk like thyroid kidney, heart and testis can be reduced significantly. VMAT gives a quicker delivery than Step and shoot or dynamic IMRT.

    1. Effect of CoFe insertion in Co{sub 2}MnSi/CoFe/n-GaAs junctions on spin injection properties

      SciTech Connect (OSTI)

      Ebina, Yuya; Akiho, Takafumi; Liu, Hong-xi; Yamamoto, Masafumi; Uemura, Tetsuya

      2014-04-28

      The CoFe thickness (t{sub CoFe}) dependence of spin injection efficiency was investigated for Co{sub 2}MnSi/CoFe/n-GaAs junctions. The ?V{sub NL}/I value, which is a measure of spin injection efficiency, strongly depended on t{sub CoFe}, where ?V{sub NL} is the amplitude of a nonlocal spin-valve signal, and I is an injection current. Importantly, the maximum value of ?V{sub NL}/I for a Co{sub 2}MnSi/CoFe/n-GaAs junction was one order of magnitude higher than that for a CoFe/n-GaAs junction, indicating that a Co{sub 2}MnSi electrode works as a highly polarized spin source. No clear spin signal, on the other hand, was observed for a Co{sub 2}MnSi/n-GaAs junction due to diffusion of Mn atoms into the GaAs channel. Secondary ion mass spectrometry analysis indicated that the CoFe insertion effectively suppressed the diffusion of Mn into GaAs, resulting in improved spin injection properties compared with those for a Co{sub 2}MnSi/n-GaAs junction.

    2. Development of high, stable-efficiency triple-junction a-Si alloy solar cells. Final technical report

      SciTech Connect (OSTI)

      Deng, X.; Jones, S.J.; Liu, T.; Izu, M.

      1998-04-01

      This report summarizes Energy Conversion Devices, Inc.`s (ECD) research under this program. ECD researchers explored the deposition of a-Si at high rates using very-high-frequency plasma MHz, and compared these VHF i-layers with radio-frequency (RF) plasma-deposited i-layers. ECD conducted comprehensive research to develop a {mu}c-Si p{sup +} layer using VHF deposition process with the objectives of establishing a wider process window for the deposition of high-quality p{sup +} materials and further enhancing their performance of a-Si solar cells by improving its p-layers. ECD optimized the deposition of the intrinsic a-Si layer and the boron-doped {mu}c-Si p{sup +} layer to improve the V{sub oc}. Researchers deposited wide-bandgap a-Si films using high hydrogen dilution; investigated the deposition of the ZnO layer (for use in back-reflector) using a sputter deposition process involving metal Zn targets; and obtained a baseline fabrication for single-junction a-Si n-i-p devices with 10.6% initial efficiency and a baseline fabrication for triple-junction a-Si devices with 11.2% initial efficiency. ECD researchers also optimized the deposition parameters for a-SiGe with high Ge content; designed a novel structure for the p-n tunnel junction (recombination layer) in a multiple-junction solar cell; and demonstrated, in n-i-p solar cells, the improved stability of a-Si:H:F materials when deposited using a new fluorine precursor. Researchers investigated the use of c-Si(n{sup +})/a-Si alloy/Pd Schottky barrier device as a tool for the effective evaluation of photovoltaic performance on a-Si alloy materials. Through alterations in the deposition conditions and system hardware, researchers improved their understanding for the deposition of uniform and high-quality a-Si and a-SiGe films over large areas. ECD researchers also performed extensive research to optimize the deposition process of the newly constructed 5-MW back-reflector deposition machine.

    3. Electric response of a metal-molecule-metal junction to laser pulse by solving hierarchical equations of motion

      SciTech Connect (OSTI)

      Cao, Hui Zhang, Mingdao; Tao, Tao; Song, Mingxia; Zhang, Chaozhi

      2015-02-28

      We have combined the quantum dissipative theory and the time dependent density functional theory to perform the first principle calculation of laser induced quantum dynamical electron transport through a molecule weak bridged to two electrodes. The formalism of hierarchical equations of motion based on non-equilibrium Green’s function theory has been taken in this work. Numerical simulations of optical absorption spectra of benzene, laser induced transient current without and with bias, charge pumping effect, as well as the spectrum analysis from the current in Au-benzene-Au molecular junction are presented and discussed.

    4. Proposed Junction-Box Stress Test (Using an Added Weight) for Use During the Module Qualification (Presentation)

      SciTech Connect (OSTI)

      Miller, D. C.; Wohlgemuth, J. H.; Kurtz, S. R.

      2012-02-01

      Engineering robust adhesion of the junction-box (j-box) is a hurdle typically encountered by photovoltaic (PV) module manufacturers during product development. Furthermore, there are historical incidences of adverse effects (e.g., fires) caused when the j-box/adhesive/module system has failed in the field. The addition of a weight to the j-box during the 'damp heat' IEC qualification test is proposed to verify the basic robustness of the j-box adhesion system. The details of the proposed test are described, in addition to the preliminary results conducted using representative materials and components.

    5. Efficient Schottky-like junction GaAs nanowire photodetector with 9?GHz modulation bandwidth with large active area

      SciTech Connect (OSTI)

      Seyedi, M. A. Yao, M.; O'Brien, J.; Wang, S. Y.; Dapkus, P. D.

      2014-07-28

      Efficient, low capacitance density GaAs/Indium-Tin-Oxide Schottky-like junction photodetectors with a 50??m square active are fabricated for operation in the gigahertz range. Modulation bandwidth is experimentally measured up to 10?GHz at various applied reverse biases and optical intensities to explore the effects of photo-generated carrier screening on modulation bandwidth. Last, the bandwidth dependence on applied reverse bias and optical intensity is simulated as a means to quantify average carrier velocities in nanowire material systems.

    6. Efficient enhancement of hydrogen production by Ag/Cu{sub 2}O/ZnO tandem triple-junction photoelectrochemical cell

      SciTech Connect (OSTI)

      Liu, Ying; Ren, Feng Chen, Chao; Liu, Chang; Xing, Zhuo; Liu, Dan; Xiao, Xiangheng; Wu, Wei; Zheng, Xudong; Liu, Yichao; Jiang, Changzhong; Shen, Shaohua; Fu, Yanming

      2015-03-23

      Highly efficient semiconductor photoelectrodes for solar hydrogen production through photocatalytic water splitting are a promising and challenge solution to solve the energy problems. In this work, Ag/Cu{sub 2}O/ZnO tandem triple-junction photoelectrode was designed and prepared. An increase of 11 times of photocurrent is achieved in the Ag/Cu{sub 2}O/ZnO photoelectrode comparing to that of the Cu{sub 2}O film. The high performance of the Ag/Cu{sub 2}O/ZnO film is due to the optimized design of the tandem triple-junction structure, where the localized surface Plasmon resonance of Ag and the hetero-junctions efficiently absorb solar energy, produce, and separate electron-hole pairs in the photocathode.

    7. Analysis of different tunneling mechanisms of In{sub x}Ga{sub 1?x}As/AlGaAs tunnel junction light-emitting transistors

      SciTech Connect (OSTI)

      Wu, Cheng-Han; Wu, Chao-Hsin

      2014-10-27

      The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x?=?5% and 2.5%) of the In{sub x}Ga{sub 1?x}As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

    8. Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells

      SciTech Connect (OSTI)

      Khatri, I.; Tang, Z.; Hiate, T.; Liu, Q.; Ishikawa, R.; Ueno, K.; Shirai, H.

      2013-12-21

      We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm{sup 2}/V s for the 1215?wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15?wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 23?nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.

    9. High 400?C operation temperature blue spectrum concentration solar junction in GaInN/GaN

      SciTech Connect (OSTI)

      Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

      2014-12-15

      Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?C. Even at 400?C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

    10. Development of 1.25 eV InGaAsN for triple junction solar cells

      SciTech Connect (OSTI)

      LI,N.Y.; SHARPS,P.R.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

      2000-05-16

      Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV InGaAsN for a triple junction GaInP{sub 2}/InGaAsN/Ge device. The AMO theoretical efficiency of this device is 30--34%. Less nitrogen and indium are required to lower the bandgap to 1.25 eV and maintain the lattice matching to GaAs. Hence, development and optimization of the 1.25 eV material for photovoltaic devices should be easier than that for the 1.05 eV material.

    11. Final report of the decontamination and decommissioning of Building 39 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Widdop, M.R.

      1996-07-01

      The U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJPO Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, is also the remedial action contractor. The soil beneath Building 39 was radiologically contaminated and the building was demolished in 1992. The soil area within the footprint of the building has been remediated in accordance with the identified standards and the area can be released for unlimited exposure and unrestricted use. This document was prepared in response to a DOE request for an individual final report for each contaminated GJPO building.

    12. Final report of the decontamination and decommissioning of Building 6 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Widdop, M.R.

      1996-07-01

      The U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the domestic uranium procurement program funded by the U.S. Atomic Energy Commission. The DOE Defense Decontamination and Decommissioning Program established the GJPO Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, is also the remedial action contractor. Radiological contamination was identified in Building 6, and the building was demolished in 1992. The soil area within the footprint of the building has been remediated in accordance with the identified standards and the area can be released for unlimited exposure and unrestricted use. This document was prepared in response to a DOE request for an individual final report for each contaminated GJPO building.

    13. Final report of the decontamination and decommissioning of Building 1 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Widdop, M.R.

      1996-08-01

      The U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJPO Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, also is the remedial action contractor. Building 1 was found to be radiologically contaminated and was demolished in 1996. The soil beneath and adjacent to the building was remediated in accordance with identified standards and can be released for unlimited exposure and unrestricted use. This document was prepared in response to a DOE request for an individual final report for each contaminated GJPO building.

    14. Final report of the decontamination and decommission of Building 31 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Krabacher, J.E.

      1996-07-01

      The U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the domestic uranium procurement program funded by the U.S. Atomic Energy Commission. The DOE Defense Decontamination and Decommissioning Program established the GJPO Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, also was the remedial action contractor. Radiological contamination was identified in Building 31 and the building was demolished in 1992. The soil area within the footprint of the building has been remediated in accordance with the identified standards and the area can be released for unlimited exposure and unrestricted use. This area was addressed in the summary final report of the remediation of the exterior areas of the GJPO facility. This document was prepared in response to a DOE request for an individual final report for each contaminated GJPO building.

    15. Final report of the decontamination and decommissioning of Building 18 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Widdop, M.R.

      1996-08-01

      The U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJPO Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, also is the remedial action contractor. The soil beneath Building 18 was found to be radiologically contaminated; the building was not contaminated. The soil was remediated in accordance with identified standards. Building 18 and the underlying soil can be released for unlimited exposure and unrestricted use. This document was prepared in response to a DOE request for an individual final report for each contaminated GJPO building.

    16. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

      SciTech Connect (OSTI)

      Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Yu, Linwei E-mail: linwei.yu@polytechnique.edu

      2015-10-19

      Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

    17. Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

      DOE Patents [OSTI]

      Wood, Richard F.; Young, Rosa T.

      1984-01-01

      The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.

    18. Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices

      SciTech Connect (OSTI)

      Entani, Shiro Naramoto, Hiroshi; Sakai, Seiji

      2015-05-07

      Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.

    19. A homozygous nonsense mutation in the {beta}3 chain gene of laminin 5 (LAMB3) in herlitz junctional epidermolysis bullosa

      SciTech Connect (OSTI)

      Pulkkinen, L.; Christiano, A.M.; Uitto, J.

      1994-11-15

      Herlitz junctional epidermolysis bullosa (H-JEB) is a severe autosomal recessive disorder characterized by blister formation within the dermal-epidermal basement membrane. Based on immunofluorescence analysis recognizing laminin 5 epitopes (previously known as nicein/kalinin), the genes for this lamina lucida protein have been proposed as candidate genes in H-JEB. Amplification of mRNA by RT-PCR, followed by direct nucleotide sequencing, revealed a homozygous C-to T transition resulting in a premature termination codon (CGA{r_arrow}TGA) on both alleles. This mutation was verified at the genomic DNA level, and both parents were shown to be heterozygous carriers of the same mutation. This is the first description of a mutation in the laminin {beta}3 chain gene (LAMB3) of laminin 5 in an H-JEB patient. 15 refs., 2 figs.

    20. Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly

      SciTech Connect (OSTI)

      Liu, Liang; Niu, Jiasen; Xiang, Li; Wei, Jian; Li, D. -L.; Feng, J. -F.; Han, X. -F.; Zhang, X. -G.; Coey, J. M. D.

      2014-11-18

      We provide experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI). Magnon effect is excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of conductance is proportional to ln (eV /kB T ), consistent with the Altshuler-Aronov theory of tunneling with EEI but inconsistent with magnetic impurity scattering. The slope of the ln (eV /kBT ) dependence is symmetry dependent, i.e., MTJs with symmetry filtering show di erent slopes for P and AP states, while those without symmetry filtering (amorphous barriers) have nearly the same slopes for P and AP.

    1. Long-Term Management Plan for the Former UMTRCA Title I Processing Site at Grand Junction, Colorado

      Office of Legacy Management (LM)

      I I I I* I I I I I: I , I I I I I I I I I I I I GJQ-2002-354-TAC GJO-LGJT 1.1.3 LTSM012974 Long-Term Surveillance and Maintenance Program Long-Term Management Plan for the Former UMTRCA Title I Processing Site at Grand Junction, Colorado September 2002 '* Work Performed Under DOE Contract No. DE-AC13-02GJ79491 for the U.S. Department of Energy - r I,- Approved for public release; distribution is unlimited. ~ " } T 6 0 ~ * ~ L G -:FT, /. ~ I. o6 I I I I I I .I I I I I I I I I I I I I

    2. A high intensity solar cell invention: The edge-illuminated vertical multi-junction (VNJ) solar cell

      SciTech Connect (OSTI)

      Sater, B.L.

      1992-08-07

      This report contains a summary of a High Intensity Solar Cell (HI Cell) development carried out under the NIST/DOE Energy-Related Invention Program. The HI Cell, or Edge-Illuminated vertical Multi-junction Solar Cell, eliminates most major problems encountered with other concentrator solar cell designs. Its high voltage and low series resistance features make it ideally suited for efficient operation at high intensities. Computer modeling shows efficiencies near 30% at 500 suns intensity are possible with state-of-art processing. Development of a working model was largely successful before encountering an unexpected problem during the last fabrication step with the anti-reflection coating. Unfortunately, funding was exhausted before its resolution. Recommendations are made to resolve the AR coating problem and to integrate all the knowledge gained during this development into a viable prototype model. The invention will provide the technical and economic performance needed to make photovoltaic systems cost-effective for wide use.

    3. A high intensity solar cell invention: The edge-illuminated vertical multi-junction (VNJ) solar cell. Final report

      SciTech Connect (OSTI)

      Sater, B.L.

      1992-08-07

      This report contains a summary of a High Intensity Solar Cell (HI Cell) development carried out under the NIST/DOE Energy-Related Invention Program. The HI Cell, or Edge-Illuminated vertical Multi-junction Solar Cell, eliminates most major problems encountered with other concentrator solar cell designs. Its high voltage and low series resistance features make it ideally suited for efficient operation at high intensities. Computer modeling shows efficiencies near 30% at 500 suns intensity are possible with state-of-art processing. Development of a working model was largely successful before encountering an unexpected problem during the last fabrication step with the anti-reflection coating. Unfortunately, funding was exhausted before its resolution. Recommendations are made to resolve the AR coating problem and to integrate all the knowledge gained during this development into a viable prototype model. The invention will provide the technical and economic performance needed to make photovoltaic systems cost-effective for wide use.

    4. A junction-tree based learning algorithm to optimize network wide traffic control: A coordinated multi-agent framework

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Zhu, Feng; Aziz, H. M. Abdul; Qian, Xinwu; Ukkusuri, Satish V.

      2015-01-31

      Our study develops a novel reinforcement learning algorithm for the challenging coordinated signal control problem. Traffic signals are modeled as intelligent agents interacting with the stochastic traffic environment. The model is built on the framework of coordinated reinforcement learning. The Junction Tree Algorithm (JTA) based reinforcement learning is proposed to obtain an exact inference of the best joint actions for all the coordinated intersections. Moreover, the algorithm is implemented and tested with a network containing 18 signalized intersections in VISSIM. Finally, our results show that the JTA based algorithm outperforms independent learning (Q-learning), real-time adaptive learning, and fixed timing plansmore » in terms of average delay, number of stops, and vehicular emissions at the network level.« less

    5. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

      SciTech Connect (OSTI)

      Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

      2015-10-05

      Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

    6. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Liu, Yuanyue; Stradins, Paul; Wei, Su -Huai

      2016-04-22

      Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanishmore » with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.« less

    7. A junction-tree based learning algorithm to optimize network wide traffic control: A coordinated multi-agent framework

      SciTech Connect (OSTI)

      Zhu, Feng; Aziz, H. M. Abdul; Qian, Xinwu; Ukkusuri, Satish V.

      2015-01-31

      Our study develops a novel reinforcement learning algorithm for the challenging coordinated signal control problem. Traffic signals are modeled as intelligent agents interacting with the stochastic traffic environment. The model is built on the framework of coordinated reinforcement learning. The Junction Tree Algorithm (JTA) based reinforcement learning is proposed to obtain an exact inference of the best joint actions for all the coordinated intersections. Moreover, the algorithm is implemented and tested with a network containing 18 signalized intersections in VISSIM. Finally, our results show that the JTA based algorithm outperforms independent learning (Q-learning), real-time adaptive learning, and fixed timing plans in terms of average delay, number of stops, and vehicular emissions at the network level.

    8. Interfacial spin-filter assisted spin transfer torque effect in Co/BeO/Co magnetic tunnel junction

      SciTech Connect (OSTI)

      Tang, Y.-H. Chu, F.-C.

      2015-03-07

      The first-principles calculation is employed to demonstrate the spin-selective transport properties and the non-collinear spin-transfer torque (STT) effect in the newly proposed Co/BeO/Co magnetic tunnel junction. The subtle spin-polarized charge transfer solely at O/Co interface gives rise to the interfacial spin-filter (ISF) effect, which can be simulated within the tight binding model to verify the general expression of STT. This allows us to predict the asymmetric bias behavior of non-collinear STT directly via the interplay between the first-principles calculated spin current densities in collinear magnetic configurations. We believe that the ISF effect, introduced by the combination between wurtzite-BeO barrier and the fcc-Co electrode, may open a new and promising route in semiconductor-based spintronics applications.

    9. Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current

      SciTech Connect (OSTI)

      Sakimura, N.; Nebashi, R.; Sugibayashi, T.; Natsui, M.; Hanyu, T.; Ohno, H.

      2014-05-07

      This paper describes the possibility of a switching upset of a magnetic tunnel junction (MTJ) caused by a terrestrial radiation-induced single-event-upset (SEU) current in spintronic integrated circuits. The current waveforms were simulated by using a 3-D device simulator in a basic circuit including MTJs designed using 90-nm CMOS parameters and design rules. The waveforms have a 400 -μA peak and a 200-ps elapsed time when neutron particles with a linear energy transfer value of 14 MeV cm{sup 2}/mg enter the silicon surface. The authors also found that the SEU current may cause soft errors with a probability of more than 10{sup −12} per event, which was obtained by approximate solution of the ordinary differential equation of switching probability when the intrinsic critical current (I{sub C0}) became less than 30 μA.

    10. Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Liu, Liang; Niu, Jiasen; Xiang, Li; Wei, Jian; Li, D. -L.; Feng, J. -F.; Han, X. -F.; Zhang, X. -G.; Coey, J. M. D.

      2014-11-18

      We provide experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI). Magnon effect is excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of conductance is proportional to ln (eV /kB T ), consistent with the Altshuler-Aronov theory of tunneling with EEI but inconsistent with magnetic impurity scattering. The slope of the ln (eV /kBT ) dependence is symmetry dependent, i.e., MTJs with symmetry filtering show di erent slopes for P and AP states,more » while those without symmetry filtering (amorphous barriers) have nearly the same slopes for P and AP.« less

    11. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

      SciTech Connect (OSTI)

      Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Zhang, Yong-Hang; Landini, Barbara; Campman, Ken

      2014-05-28

      This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300?nm thick GaAs absorber, combined with a 5??m thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00?V, short-circuit current densities (J{sub sc}) up to 24.5?mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6?mA/cm{sup 2} and 20.7%, respectively.

    12. Effects of phenol on barrier function of a human intestinal epithelial cell line correlate with altered tight junction protein localization

      SciTech Connect (OSTI)

      McCall, Ingrid C.; Betanzos, Abigail; Weber, Dominique A.; Nava, Porfirio; Miller, Gary W.; Parkos, Charles A.

      2009-11-15

      Phenol contamination of soil and water has raised concerns among people living near phenol-producing factories and hazardous waste sites containing the chemical. Phenol, particularly in high concentrations, is an irritating and corrosive substance, making mucosal membranes targets of toxicity in humans. However, few data on the effects of phenol after oral exposure exist. We used an in vitro model employing human intestinal epithelial cells (SK-CO15) cultured on permeable supports to examine effects of phenol on epithelial barrier function. We hypothesized that phenol disrupts epithelial barrier by altering tight junction (TJ) protein expression. The dose-response effect of phenol on epithelial barrier function was determined using transepithelial electrical resistance (TER) and FITC-dextran permeability measurements. We studied phenol-induced changes in cell morphology and expression of several tight junction proteins by immunofluorescence and Western blot analysis. Effects on cell viability were assessed by MTT, Trypan blue, propidium iodide and TUNEL staining. Exposure to phenol resulted in decreased TER and increased paracellular flux of FITC-dextran in a dose-dependent manner. Delocalization of claudin-1 and ZO-1 from TJs to cytosol correlated with the observed increase in permeability after phenol treatment. Additionally, the decrease in TER correlated with changes in the distribution of a membrane raft marker, suggesting phenol-mediated effects on membrane fluidity. Such observations were independent of effects of phenol on cell viability as enhanced permeability occurred at doses of phenol that did not cause cell death. Overall, these findings suggest that phenol may affect transiently the lipid bilayer of the cell membrane, thus destabilizing TJ-containing microdomains.

    13. Anomalous junctions characterized by Raman spectroscopy in Si{sub x}Ge{sub 1−x} nanowires with axially degraded components

      SciTech Connect (OSTI)

      Xia, Minggang; Han, Jinyun; Cheng, Zhaofang; Liang, Chunping; Zhang, Shengli

      2014-09-08

      The characterization of junctions in nanowires by high-resolution transmission electron microscopy with spherical aberration correction is tricky and tedious. Many disadvantages also exist, including rigorous sample preparation and structural damage inflicted by high-energy electrons. In this work, we present a simple, low-cost, and non-destructive Raman spectroscopy method of characterizing anomalous junctions in nanowires with axially degraded components. The Raman spectra of Si{sub x}Ge{sub 1−x} nanowires with axially degraded components are studied in detail using a confocal micro-Raman spectrometer. Three Raman peaks (ν{sub Si–Si} = 490 cm{sup −1}, ν{sub Si–Ge} = 400 cm{sup −1}, and ν{sub Ge–Ge} = 284 cm{sup −1}) up-shift with increased Si content. This up-shift originates in the bond compression induced by a confined effect on the radial direction of nanowire. The anomalous junctions in Si{sub x}Ge{sub 1−x} nanowires with axially degraded components are then observed by Raman spectroscopy and verified by transmission electron microscopy energy-dispersive X-ray spectroscopy. The anomalous junctions of Si{sub x}Ge{sub 1−x} nanowires with axially degraded components are due to the vortex flow of inlet SiH{sub 4} and GeH{sub 4} gas in their synthesis. The anomalous junctions can be used as raw materials for fabricating devices with special functions.

    14. Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions

      SciTech Connect (OSTI)

      Andreev, V. M.; Evstropov, V. V.; Kalinovsky, V. S. Lantratov, V. M.; Khvostikov, V. P.

      2009-05-15

      Dependence of the efficiency of single-junction and multijunction solar cells on the mechanisms of current flow in photoactive p-n junctions, specifically on the form of the dark current-voltage characteristic J-V, has been studied. The resistanceless J-V{sub j} characteristic (with the series resistance disregarded) of a multijunction solar cell has the same shape as the characteristic of a single-junction cell: both feature a set of exponential portions. This made it possible to develop a unified analytical method for calculating the efficiency of singlejunction and multijunction solar cells. The equation relating the efficiency to the photogenerated current at each portion of the J-V{sub j} characteristic is derived. For p-n junctions in GaAs and GaSb, the following characteristics were measured: the dark J-V characteristic, the dependence of the open-circuit voltage on the illumination intensity P-V{sub OC}, and the dependence of the luminescence intensity on the forward current L-J. Calculated dependences of potential efficiency (under idealized condition for equality to unity of external quantum yield) on the photogenerated current for single-junction GaAs and GaSb solar cells and a GaAs/GaSb tandem are plotted. The form of these dependences corresponds to the shape of J-V{sub j} characteristics: there are the diffusion- and recombination-related portions; in some cases, the tunneling-trapping portion is also observed. At low degrees of concentration of solar radiation (C < 10), an appreciable contribution to photogenerated current is made by recombination component. It is an increase in this component in the case of irradiation with 6.78-MeV protons or 1-MeV electrons that brings about a decrease in the efficiency of conversion of unconcentrated solar radiation.

    15. Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

      SciTech Connect (OSTI)

      Guo, P.; Yu, G. Q.; Wei, H. X.; Han, X. F. E-mail: xfhan@aphy.iphy.ac.cn; Li, D. L.; Feng, J. F. E-mail: xfhan@aphy.iphy.ac.cn; Kurt, H.; Chen, J. Y.; Coey, J. M. D.

      2014-10-21

      Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d²I/dV², and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E{sub C} derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process, opening an additional conductance channel and thus enhancing the total conductance.

    16. Electric field and temperature dependence of dielectric permittivity in strontium titanate investigated by a photoemission study on Pt/SrTiO{sub 3}:Nb junctions

      SciTech Connect (OSTI)

      Hirose, Sakyo; Okushi, Hideyo; Yoshikawa, Hideki; Adachi, Yutaka; Ohsawa, Takeo; Haneda, Hajime; Ueda, Shigenori; Ando, Akira; Ohashi, Naoki

      2015-05-11

      Schottky junctions made from platinum and niobium-doped strontium titanate (SrTiO{sub 3}:Nb) were investigated by hard X-ray photoemission (HXPES) and through a band bending behavior simulation using a phenomenological model, which assumes a decrease in dielectric constant due to an electric field. Thus, we confirmed that the observed HXPES spectra at relatively high temperatures, e.g., >250?K, were well simulated using this phenomenological model. In contrast, it was inferred that the model was not appropriate for junction behavior at lower temperatures, e.g., <150?K. Therefore, a reconstruction of the phenomenological model is necessary to adequately explain the dielectric properties of SrTiO{sub 3}.

    17. Multi-step ion beam etching of sub-30 nm magnetic tunnel junctions for reducing leakage and MgO barrier damage

      SciTech Connect (OSTI)

      Chun, Sung-woo; Kim, Daehong; Kwon, Jihun; Kim, Bongho; Choi, Seonjun; Lee, Seung-Beck

      2012-04-01

      We have demonstrated the fabrication of sub 30 nm magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. The multi-step ion beam etching (IBE) process performed for 18 min between 45 deg. and 30 deg. , at 500 V combined ion supply voltage, resulted in a 55 nm tall MTJ with 28 nm diameter. We used a negative tone electron beam resist as the hard mask, which maintained its lateral dimension during the IBE, allowing almost vertical pillar side profiles. The measurement results showed a tunnel magneto-resistance ratio of 13% at 1 k{Omega} junction resistance. With further optimization in IBE energy and multi-step etching process, it will be possible to fabricate perpendicularly oriented MTJs for future sub 30 nm non-volatile magnetic memory applications.

    18. High detection efficiency micro-structured solid-state neutron detector with extremely low leakage current fabricated with continuous p-n junction

      SciTech Connect (OSTI)

      Huang, Kuan-Chih; Lu, James J.-Q.; Bhat, Ishwara B.; Dahal, Rajendra; Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3522 ; Danon, Yaron

      2013-04-15

      We report the continuous p-n junction formation in honeycomb structured Si diode by in situ boron deposition and diffusion process using low pressure chemical vapor deposition for solid-state thermal neutron detection applications. Optimized diffusion temperature of 800 Degree-Sign C was obtained by current density-voltage characteristics for fabricated p{sup +}-n diodes. A very low leakage current density of {approx}2 Multiplication-Sign 10{sup -8} A/cm{sup 2} at -1 V was measured for enriched boron filled honeycomb structured neutron detector with a continuous p{sup +}-n junction. The neutron detection efficiency for a Maxwellian spectrum incident on the face of the detector was measured under zero bias voltage to be {approx}26%. These results are very encouraging for fabrication of large area solid-state neutron detector that could be a viable alternative to {sup 3}He tube based technology.

    19. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

      DOE Patents [OSTI]

      Welch, James D.

      2000-01-01

      Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

    20. Novel signal inversion of laser beam induced current for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe

      SciTech Connect (OSTI)

      Qiu, W. C.; Wang, R.; Xu, Z. J.; Jiang, T.; Cheng, X. A.

      2014-05-28

      In this paper, experimental results of temperature-dependent signal inversion of laser beam induced current (LBIC) for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe are reported. LBIC characterization shows that the traps induced by femtosecond laser drilling are sensitive to temperature. Theoretical models for trap-related p-n junction transformation are proposed and demonstrated using numerical simulations. The simulations are in good agreement with the experimental results. The effects of traps and mixed conduction are possibly the main reasons that result in the novel signal inversion of LBIC microscope at room temperature. The research results provide a theoretical guide for practical applications of large-scale array HgCdTe infrared photovoltaic detectors formed by femtosecond laser drilling, which may act as a potential new method for fabricating HgCdTe photodiodes.

    1. Positive field-cooled dc susceptibility in granular superconductors interpreted through numerical simulations on a simple Josephson-junction-array model

      SciTech Connect (OSTI)

      Auletta, C.; Raiconi, G.; De Luca, R.; Pace, S.

      1995-05-01

      We have performed numerical simulations of a field-cooled dc susceptibility experiment carried out for granular superconductors by modeling these systems with a simple Josephson-junction array proposed by the authors. By this analysis the temperature dependence of the positive field-cooled susceptibility at very low values of the applied magnetic field, observed by Braunisch {ital et} {ital al}. [Phys. Rev. Lett. 68, 1908 (1992)] for some ceramic superonductors, has been reproduced and interpreted.

    2. Tunneling magnetoresistance in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junctions

      SciTech Connect (OSTI)

      Tao, L. L.; Liang, S. H.; Liu, D. P.; Wei, H. X.; Han, X. F.; Wang, Jian

      2014-04-28

      We present a theoretical study of the tunneling magnetoresistance (TMR) and spin-polarized transport in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junction (MTJ). It is found that the spin-polarized conductance and bias-dependent TMR ratios are rather sensitive to the structure of Fe{sub 3}Si electrode. From the symmetry analysis of the band structures, we found that there is no spin-polarized Δ{sub 1} symmetry bands crossing the Fermi level for the cubic Fe{sub 3}Si. In contrast, the tetragonal Fe{sub 3}Si driven by in-plane strain reveals half-metal nature in terms of Δ{sub 1} state. The giant TMR ratios are predicted for both MTJs with cubic and tetragonal Fe{sub 3}Si electrodes under zero bias. However, the giant TMR ratio resulting from interface resonant transmission for the former decreases rapidly with the bias. For the latter, the giant TMR ratio can maintain up to larger bias due to coherent transmission through the majority-spin Δ{sub 1} channel.

    3. Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

      DOE Patents [OSTI]

      Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

      1999-01-01

      The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

    4. Work plan for phase 1A paleochannel studies at the Cheney disposal cell, Grand Junction, Colorado: Draft

      SciTech Connect (OSTI)

      1996-11-01

      This document will serve as a Work Plan for continuing paleochannel characterization activities at the Cheney disposal site near Grand Junction, Colorado. Elevated levels of nitrate were encountered in ground water from two monitor wells installed in alluvial paleochannels near the Cheney disposal cell in 1994. This triggered a series of investigations (Phase 1) designed to determine the source of nitrate and other chemical constituents in ground water at the site. A comprehensive summary of the Phase 1 field investigations (limited to passive monitoring and modeling studies) conducted by the Remedial Action Contractor (RAC) and Technical Assistance Contractor (TAC) to date is provided in Section 2.0 of this document. Results of Phase 1 were inconclusive regarding the potential interaction between the disposal cell and the paleochannels, so additional Phase 1A investigations are planned. Recommendations for Phase 1A tasks and possible future activities are discussed in Section 3.0. Detailed information on the implementation of the proposed Phase 1A tasks appears in Section 4.0 and will provide the basis for Statements of Work (SOW) for each of these tasks. A detailed sampling plan is provided to ensure quality and a consistency with previous data collection efforts.

    5. Final Scientific/Technical Report: Electronics for Large Superconducting Tunnel Junction Detector Arrays for Synchrotron Soft X-ray Research

      SciTech Connect (OSTI)

      Warburton, William K

      2009-03-06

      Superconducting tunnel junction (STJ) detectors offer a an approach to detecting soft x-rays with energy resolutions 4-5 times better and at rates 10 faster than traditions semiconductor detectors. To make such detectors feasible, however, then need to be deployed in large arrays of order 1000 detectors, which in turn implies that their processing electronics must be compact, fully computer controlled, and low cost per channel while still delivering ultra-low noise performance so as to not degrade the STJ's performance. We report on our progress in designing a compact, low cost preamplifier intended for this application. In particular, we were able to produce a prototype preamplifier of 2 sq-cm area and a parts cost of less than $30 that matched the energy resolution of the best conventional system to date and demonstrated its ability to acquire an STJ I-V curve under computer control, the critical step for determining and setting the detectors' operating points under software control.

    6. Trial-Run of a Junction-Box Attachment Test for Use in Photovoltaic Module Qualification: Preprint

      SciTech Connect (OSTI)

      Miller, D. C.; Deibert, S. L.; Wohlgemuth, J. H.

      2014-06-01

      Engineering robust adhesion of the junction box (j-box) is a hurdle typically encountered by photovoltaic module manufacturers during product development and manufacturing process control. There are historical incidences of adverse effects (e.g., fires) caused when the j-box/adhesive/module system has failed in the field. The addition of a weight to the j-box during the 'damp-heat,' 'thermal-cycle,' or 'creep' tests within the IEC qualification protocol is proposed to verify the basic robustness of the adhesion system. The details of the proposed test are described, in addition to a trial-run of the test procedure. The described experiments examine four moisture-cured silicones, four foam tapes, and a hot-melt adhesive used in conjunction with glass, KPE, THV, and TPE substrates. For the purpose of validating the experiment, j-boxes were adhered to a substrate, loaded with a prescribed weight, and then subjected to aging. The replicate mock-modules were aged in an environmental chamber (at 85 degrees C/85% relative humidity for 1000 hours; then 100 degrees C/<10% relative humidity for 200 hours) or fielded in Golden (CO), Miami (FL), and Phoenix (AZ) for one year. Attachment strength tests, including pluck and shear test geometries, were also performed on smaller component specimens.

    7. Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80-300 K

      SciTech Connect (OSTI)

      Emel'yanov, A. M. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)], E-mail: Emelyanov@mail.ioffe.ru

      2008-11-15

      The edge electroluminescence spectra of silicon point-junction light-emitting diodes with a p-n junction area of 0.008 mm{sup 2} are studied at temperatures ranging from 80 to 300 K. Unprecedentedly high stability of the position of the spectral peak is observed at temperatures in the range between 130 and 300 K. The spectral characteristics of the light emitting diodes are studied at 80 K at different current densities up to 25 kA/cm{sup 2}. In contrast to the earlier reported data obtained at 300 K, the data obtained at 80 K do not show any noticeable Augerrecombination-related decrease in the quantum efficiency. From an analysis of the electroluminescence spectra at 80 K in a wide range of currents, it follows that radiative annihilation of free excitons is not a governing mechanism of electroluminescence in the entire emitting region in the base of the point-junction light-emitting diode at all currents used in the experiment.

    8. Baseline risk assessment of ground water contamination at the Uranium Mill Tailings Site near Grand Junction, Colorado

      SciTech Connect (OSTI)

      Not Available

      1994-06-01

      This Baseline Risk Assessment of Ground Water Contamination at the Uranium Mill Tailings Site Near Grand Junction, Colorado evaluates potential impacts to public health or the environment resulting from ground water contamination at the former uranium mill processing site. The tailings and other contaminated material at this site were placed in an off-site disposal cell by the US Department of Energy`s (DOE) Uranium Mill Tailings Remedial Action (UMTRA) Project. The remedial activities at the site were conducted from 1989 to 1993. Currently, the UMTRA Project is evaluating ground water contamination. This risk assessment is the first document specific to this site for the Ground Water Project. This risk assessment evaluates the most contaminated ground water that flows beneath the processing site toward the Colorado River. The monitor wells that have consistently shown the highest concentrations of most contaminants are used to assess risk. This risk assessment will be used in conjunction with additional activities and documents to determine what remedial action may be needed for contaminated ground water at the site. This risk assessment follows an approach outlined by the EPA. the first step is to evaluate ground water data collected from monitor wells at the site. Evaluation of these data showed that the contaminants of potential concern in the ground water are arsenic, cadmium, cobalt, fluoride, iron, manganese, molybdenum, nickel, sulfate, uranium, vanadium, zinc, and radium-226. The next step in the risk assessment is to estimate how much of these contaminants people would be exposed to if they drank from a well installed in the contaminated ground water at the former processing site.

    9. High Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology, Final Technical Report, 6 March 1998 - 15 October 2001

      SciTech Connect (OSTI)

      Guha, S.

      2001-11-08

      This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and high reliability. United Solar uses a spectrum-splitting, triple-junction cell structure. The top cell uses an amorphous silicon alloy of {approx}1.8-eV bandgap to absorb blue photons. The middle cell uses an amorphous silicon germanium alloy ({approx}20% germanium) of {approx}1.6-eV bandgap to capture green photons. The bottom cell has {approx}40% germanium to reduce the bandgap to {approx}1.4-eV to capture red photons. The cells are deposited on a stainless-steel substrate with a predeposited silver/zinc oxide back reflector to facilitate light-trapping. A thin layer of antireflection coating is applied to the top of the cell to reduce reflection loss. The major research activities conducted under this program were: (1) Fundamental studies to improve our understanding of materials and devices; the work included developing and analyzing a-Si alloy and a-SiGe alloy materials prepared near the threshold of amorphous-to-microcrystalline transition and studying solar cells fabricated using these materials. (2) Deposition of small-area cells using a radio-frequency technique to obtain higher deposition rates. (3) Deposition of small-area cells using a modified very high frequency technique to obtain higher deposition rates. (4) Large-area cell research to obtain the highest module efficiency. (5) Optimization of solar cells and modules fabricated using production parameters in a large-area reactor.

    10. A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

      SciTech Connect (OSTI)

      Nyamhere, C.; Scheinemann, A.; Schenk, A.; Scheit, A.; Olivie, F.; Cristiano, F.

      2015-11-14

      In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 10{sup 15} Ge cm{sup −2} and annealing between 1000 °C and 1100 °C introduced two broad electron levels E{sub C} − 0.38 eV and E{sub C} − 0.29 eV in n-type samples and a single broad hole trap E{sub V} + 0.25 eV in the p-type samples. These trap levels are related to the extended defects (dislocation loops) formed during annealing. Dislocation loops are responsible for the significant increase of leakage currents which are attributed to the same energy levels. The comparison between structural defect parameters and electrical defect concentrations indicates that atoms located on the loop perimeter are the likely sources of the measured DLTS signals. The combined use of defect models and recently developed DLTS simulation allows reducing the number of assumptions and fitting parameters needed for the simulation of leakage currents, therefore improving their predictability. It is found that simulations based on the coupled-defect-levels model reproduce well the measured leakage current values and their field dependence behaviour, indicating that leakage currents can be successfully simulated on the exclusive basis of the experimentally observed energy levels.

    11. Comparative life-cycle energy payback analysis of multi-junction a-SiGe and nanocrystalline/a-Si modules

      SciTech Connect (OSTI)

      Fthenakis, V.; Kim, H.

      2010-07-15

      Despite the publicity of nanotechnologies in high tech industries including the photovoltaic sector, their life-cycle energy use and related environmental impacts are understood only to a limited degree as their production is mostly immature. We investigated the life-cycle energy implications of amorphous silicon (a-Si) PV designs using a nanocrystalline silicon (nc-Si) bottom layer in the context of a comparative, prospective life-cycle analysis framework. Three R and D options using nc-Si bottom layer were evaluated and compared to the current triple-junction a-Si design, i.e., a-Si/a-SiGe/a-SiGe. The life-cycle energy demand to deposit nc-Si was estimated from parametric analyses of film thickness, deposition rate, precursor gas usage, and power for generating gas plasma. We found that extended deposition time and increased gas usages associated to the relatively high thickness of nc-Si lead to a larger primary energy demand for the nc-Si bottom layer designs, than the current triple-junction a-Si. Assuming an 8% conversion efficiency, the energy payback time of those R and D designs will be 0.7-0.9 years, close to that of currently commercial triple-junction a-Si design, 0.8 years. Future scenario analyses show that if nc-Si film is deposited at a higher rate (i.e., 2-3 nm/s), and at the same time the conversion efficiency reaches 10%, the energy-payback time could drop by 30%.

    12. Global Structure of a Three-Way Junction in a Phi29 Packaging RNA Dimer Determined Using Site-Directed Spin Labeling

      SciTech Connect (OSTI)

      Zhang, Xiaojun; Tung, Chang-Shung; Sowa, Glenna; Hatmal, Ma'mon M.; Haworth, Ian S.; Qin, Peter Z.

      2012-02-08

      The condensation of bacteriophage phi29 genomic DNA into its preformed procapsid requires the DNA packaging motor, which is the strongest known biological motor. The packaging motor is an intricate ring-shaped protein/RNA complex, and its function requires an RNA component called packaging RNA (pRNA). Current structural information on pRNA is limited, which hinders studies of motor function. Here, we used site-directed spin labeling to map the conformation of a pRNA three-way junction that bridges binding sites for the motor ATPase and the procapsid. The studies were carried out on a pRNA dimer, which is the simplest ring-shaped pRNA complex and serves as a functional intermediate during motor assembly. Using a nucleotide-independent labeling scheme, stable nitroxide radicals were attached to eight specific pRNA sites without perturbing RNA folding and dimer formation, and a total of 17 internitroxide distances spanning the three-way junction were measured using Double Electron-Electron Resonance spectroscopy. The measured distances, together with steric chemical constraints, were used to select 3662 viable three-way junction models from a pool of 65 billion. The results reveal a similar conformation among the viable models, with two of the helices (HT and HL) adopting an acute bend. This is in contrast to a recently reported pRNA tetramer crystal structure, in which HT and HL stack onto each other linearly. The studies establish a new method for mapping global structures of complex RNA molecules, and provide information on pRNA conformation that aids investigations of phi29 packaging motor and developments of pRNA-based nanomedicine and nanomaterial.

    13. NREL, CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell (Fact Sheet), Highlights in Research & Development, NREL (National Renewable Energy Laboratory)

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      Scientists set a new world record for converting non-concentrated sunlight into electricity using a dual-junction III-V/Si solar cell. A joint effort between the National Renewable Energy Laboratory (NREL) and the Swiss Center for Electronics and Microtechnology (CSEM) has resulted in a novel tandem solar cell that operates at 29.8% conversion efficiency under 1-sun conditions. The new solar cell technology combines NREL's 1.8-eV gallium indium phosphide (GaInP) technology as a top cell and

    14. Large-area, triple-junction a-Si alloy production scale-up. Semiannual subcontract report, 17 March 1994--18 September 1994

      SciTech Connect (OSTI)

      Oswald, R.; Morris, J. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

      1995-09-01

      This report describes work performed under a 3-y subcontract to advance Solarex`s photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance, and expand the Solarex commercial production capacity. During this period, Solarex focused on improving deposition of the front contact, investigating alternate feedstocks for the front contact, maximizing throughput and area utilization for all laser scribes, optimizing a-Si:H deposition equipment to achieve uniform deposition over large areas, optimizing the triple-junction module fabrication process, evaluating the materials to deposit the rear contact, and optimizing the combination of isolation scribe and encapsulant to pass the wet high potential test.

    15. Large voltage modulation in magnetic field sensors from two-dimensional arrays of Y-Ba-Cu-O nano Josephson junctions

      SciTech Connect (OSTI)

      Cybart, Shane A. Dynes, R. C.; Cho, E. Y.; Wong, T. J.; Glyantsev, V. N.; Huh, J. U.; Yung, C. S.; Moeckly, B. H.; Beeman, J. W.; Ulin-Avila, E.; Wu, S. M.

      2014-02-10

      We have fabricated and tested two-dimensional arrays of YBa{sub 2}Cu{sub 3}O{sub 7??} superconducting quantum interference devices. The arrays contain over 36?000 nano Josephson junctions fabricated from ion irradiation of YBa{sub 2}Cu{sub 3}O{sub 7??} through narrow slits in a resist-mask that was patterned with electron beam lithography and reactive ion etching. Measurements of current-biased arrays in magnetic field exhibit large voltage modulations as high as 30?mV.

    16. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

      SciTech Connect (OSTI)

      Piprek, Joachim

      2014-02-03

      This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

    17. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

      SciTech Connect (OSTI)

      Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

      1997-12-31

      Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

    18. Computed tomography image using sub-terahertz waves generated from a high-T{sub c} superconducting intrinsic Josephson junction oscillator

      SciTech Connect (OSTI)

      Kashiwagi, T., E-mail: kashiwagi@ims.tsukuba.ac.jp; Minami, H.; Kadowaki, K. [Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba (Japan); Division of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1, Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Nakade, K.; Saiwai, Y.; Kitamura, T.; Watanabe, C.; Ishida, K.; Sekimoto, S.; Asanuma, K.; Yasui, T.; Shibano, Y. [Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba (Japan); Tsujimoto, M. [Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510 (Japan); Yamamoto, T. [Wide Bandgap Materials Group, Optical and Electronic Materials Unit, Environment and Energy Materials Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Markovi?, B. [Faculty of Sciences, University of Montenegro, George Washington Str., 81000 Podgorica (Montenegro); Mirkovi?, J. [Faculty of Science, University of Montenegro, and CETI, Put Radomira Ivanovica, 81000 Podgorica (Montenegro); Klemm, R. A. [Department of Physics, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida 32816-2385 (United States)

      2014-02-24

      A computed tomography (CT) imaging system using monochromatic sub-terahertz coherent electromagnetic waves generated from a device constructed from the intrinsic Josephson junctions in a single crystalline mesa structure of the high-T{sub c} superconductor Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+?} was developed and tested on three samples: Standing metallic rods supported by styrofoam, a dried plant (heart pea) containing seeds, and a plastic doll inside an egg shell. The images obtained strongly suggest that this CT imaging system may be useful for a variety of practical applications.

    19. Reprogramming of cell junction modules during stepwise epithelial to mesenchymal transition and accumulation of malignant features in vitro in a prostate cell model

      SciTech Connect (OSTI)

      Ke, Xi-song; Department of Microbiology, Haukeland, University Hospital, Bergen ; Li, Wen-cheng; Urological Department, Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430022 ; Hovland, Randi; Department of Molecular Biology, University of Bergen, Bergen ; Qu, Yi; Liu, Run-hui; McCormack, Emmet; Thorsen, Frits; Olsen, Jan Roger; Molven, Anders; Department of Pathology, Haukeland University Hospital, Bergen ; Kogan-Sakin, Ira; Rotter, Varda; Akslen, Lars A.; Department of Pathology, Haukeland University Hospital, Bergen ; Oyan, Anne Margrete; Department of Microbiology, Haukeland, University Hospital, Bergen ; Kalland, Karl-Henning; Department of Microbiology, Haukeland, University Hospital, Bergen

      2011-01-15

      Epithelial to mesenchymal transition (EMT) is pivotal in tumor metastasis. Our previous work reported an EMT model based on primary prostate epithelial cells (EP156T) which gave rise to cells with mesenchymal phenotype (EPT1) without malignant transformation. To promote prostate cell transformation, cells were maintained in saturation density cultures to select for cells overriding quiescence. Foci formed repeatedly following around 8 weeks in confluent EPT1 monolayers. Only later passage EPT1, but not EP156T cells of any passage, could form foci. Cells isolated from the foci were named EPT2 and formed robust colonies in soft agar, a malignant feature present neither in EP156T nor in EPT1 cells. EPT2 cells showed additional malignant traits in vitro, including higher ability to proliferate following confluence, higher resistance to apoptosis and lower dependence on exogenous growth factors than EP156T and EPT1 cells. Microarray profiling identified gene sets, many of which belong to cell junction modules, that changed expression from EP156T to EPT1 cells and continued to change from EPT1 to EPT2 cells. Our findings provide a novel stepwise cell culture model in which EMT emerges independently of transformation and is associated with subsequent accumulation of malignant features in prostate cells. Reprogramming of cell junction modules is involved in both steps.

    20. Grand Junction Projects Office Remedial Action Project: Feasibility test of real-time radiation monitoring during removal of surface contamination from concrete floors

      SciTech Connect (OSTI)

      Leino, R.; Corle, S.

      1995-10-01

      This feasibility test was conducted to determine if real-time radiation-monitoring instruments could be mounted on decontamination machines during remediation activities to provide useful and immediate feedback to equipment operators. The U.S. Department of Energy (DOE) sponsored this field test under the Grand Junction Projects Office Remedial Action Project (GJPORAP) to identify a more efficient method to remove radiological contamination from concrete floor surfaces. This test demonstrated that project durations and costs may be reduced by combining radiation-monitoring equipment with decontamination machines. The test also demonstrated that a microprocessor-based instrument such as a radiation monitor can withstand the type of vibration that is characteristic of floor scabblers with no apparent damage. Combining radiation-monitoring equipment with a decontamination machine reduces the time and costs required to decontaminate concrete surfaces. These time and cost savings result from the reduction in the number of interim radiological surveys that must be conducted to complete remediation. Real-time radiation monitoring allows equipment operators to accurately monitor contamination during the decontamination process without support from radiological technicians, which also reduces the project duration and costs. The DOE Grand Junction Projects Office recommends more extensive and rigorous testing of this real-time radiation monitoring to include a variety of surfaces and decontamination machines. As opportunities arise, additional testing will be conducted under GJPORAP.

    1. Bulldog | Open Energy Information

      Open Energy Info (EERE)

      Bulldog LLC Energy Purchaser Farmers' Cooperative of Greenfield Location Greenfield IA Coordinates 41.22708706, -94.43487167 Show Map Loading map... "minzoom":false,"mapp...

    2. Wolverine | Open Energy Information

      Open Energy Info (EERE)

      Wolverine LLC Energy Purchaser Farmers' Cooperative of Greenfield Location Greenfield IA Coordinates 41.39310112, -94.44487095 Show Map Loading map... "minzoom":false,"mapp...

    3. Building America Whole-House Solutions for Existing Homes: Conway...

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      Conway Street Apartments - Greenfield, Massachusetts Building America Whole-House Solutions for Existing Homes: Conway Street Apartments - Greenfield, Massachusetts Through recent ...

    4. Large-area, triple-junction a-Si alloy production scale-up. Semiannual subcontract report, 17 March 1994--18 September 1994

      SciTech Connect (OSTI)

      Oswald, R.; Morris, J. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

      1995-03-01

      This report describes work performed under a 3-year subcontract to advance Solarex`s photovoltaic (PV) manufacturing technologies, reduce its hydrogenated amorphous silicon (a-Si:H) module production costs, increase module performance, and expand the Solarex commercial production capacity. During the period covered by this report, Solarex focused on (1) improving deposition of the front contact, (2) investigating alternate feed stocks for the front contact, (3) maximizing throughput and area utilization for all laser scribes, (4) optimizing a-Si:H deposition equipment to achieve uniform deposition over large areas, (5) optimizing the triple-junction module fabrication process, (6) evaluating the materials to deposit the rear contact, and (7) optimizing the combination of isolation scribe and encapsulant to pass the wet high-potential test.

    5. Environmental Assessment and Finding of No Significant Impact: Transfer of the Department of Energy Grand Junction Office to Non-DOE Ownership

      SciTech Connect (OSTI)

      N /A

      2000-04-25

      The scope of this environmental assessment (EA) is to analyze the potential consequences of the Proposed Action on human health and the environment. Accordingly, this EA contains an introduction to the site and the history of the Grand Junction Office (Chapter One), a description of the Purpose and Need for Agency Action (Chapter Two), a description of the Proposed Action and Alternatives (Chapter Three), and the description of the Affected Environment and the Environmental Consequences (Chapter Four). Resource categories addressed in this EA include geology, soils and topography, groundwater and surface water, floodplains and wetlands, land use and infrastructure, human health, ecological resources, cultural resources, air quality, noise, visual resources, solid and hazardous waste management, transportation, and socioeconomic and environmental justice.

    6. Band structure of the epitaxial Fe/MgO/GaAs(001) tunnel junction studied by x-ray and ultraviolet photoelectron spectroscopies

      SciTech Connect (OSTI)

      Lu, Y.; Le Breton, J. C.; Turban, P.; Lepine, B.; Schieffer, P.; Jezequel, G.

      2006-10-09

      The electronic band structure in the epitaxial Fe/MgO/GaAs(001) tunnel junction has been studied by x-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barrier height (SBH) of Fe on MgO/GaAs heterostructure is determined to be 3.3{+-}0.1 eV, which sets the Fe Fermi level at about 0.3 eV above the GaAs valence band maximum. This SBH is also exactly the same as that measured from Fe on MgO monocrystal. After Fe deposition, no band bending change is observed in MgO and GaAs underlayers. On the contrary, Au and Al depositions led to clear variation of the band bending in both MgO and GaAs layers. This effect is analyzed as a fingerprint of defect states at the MgO/GaAs interface.

    7. Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film

      SciTech Connect (OSTI)

      Takenaga, Takashi Tsuzaki, Yosuke; Yoshida, Chikako; Yamazaki, Yuichi; Hatada, Akiyoshi; Nakabayashi, Masaaki; Iba, Yoshihisa; Takahashi, Atsushi; Noshiro, Hideyuki; Tsunoda, Koji; Aoki, Masaki; Furukawa, Taisuke; Fukumoto, Hiroshi; Sugii, Toshihiro

      2014-05-07

      We evaluated MgO-based magnetic tunnel junctions (MTJs) for magnetic field sensors with spin-valve-type structures in the CoFeB sensing layer capped by an MgO film in order to obtain both top and bottom interfaces of MgO/CoFeB exhibiting interfacial perpendicular magnetic anisotropy (PMA). Hysteresis of the CoFeB sensing layer in these MTJs annealed at 275?C was suppressed at a thickness of the sensing layer below 1.2?nm by interfacial PMA. We confirmed that the CoFeB sensing layers capped with MgO suppress the thickness dependences of both the magnetoresistance ratio and the magnetic behaviors of the CoFeB sensing layer more than that of the MTJ with a Ta capping layer. MgO-based MTJs with MgO capping layers can improve the controllability of the characteristics for magnetic field sensors.

    8. Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

      SciTech Connect (OSTI)

      Kodzuka, M.; Ohkubo, T.; Hono, K.; Ikeda, S.; Ohno, H.; Gan, H. D.

      2012-02-15

      The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co{sub 25}Fe{sub 75}){sub 100-x}B{sub x}/MgO/(Co{sub 25}Fe{sub 75}){sub 100-x}B{sub x} (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x = 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co{sub 25}Fe{sub 75}){sub 67}B{sub 33}, while good epitaxy was observed between (001) textured MgO and (Co{sub 25}Fe{sub 75}){sub 78}B{sub 22} electrodes.

    9. SU-E-T-12: A Feasibility Study of Patient Specific QA Using Gafchromic Film of Dynamic Feathering in Junctions of Craniospinal Irradiation

      SciTech Connect (OSTI)

      Stanford, J; Duggar, W; Yang, C

      2014-06-01

      Purpose: Cranio-spinal irradiation is the most complicated format of the conventional external beam radiation therapy because it involves matches of non-coplanar beams which are susceptible to daily setup errors. This study explores the efficacy of Gafchromic film dosimetry to quantitatively verify the junctions for cranio-spinal radiation feathered with field in field technique. Methods: 15cm in thickness of solid water phantom was scanned vertically and exported to the Pinnacle TPS as primary phantom data set. A patient cranio-spinal plan, consisted of two bilateral whole brain beams dynamically matched with a posterior spinal beam using field in field technique, was transferred to the phantom and recalculated for one fraction with set monitor units identical to the original plan. Next, planar dose distribution on the phantom was exported to the FilmQA Pro 2013 software (Ashland, Inc.) in binary format for comparison with the measured dose distribution. An EBT2 film was sandwiched in the middle of the phantom and the phantom was set up according to the QA plan based on the room laser system. The shifts instructions associated with the patient original plan were made and the beams from the patient original plan delivered to the solid water phantom via the record and verify system in QA mode. The dose distribution from the measured film was compared with the planned reference distribution using gamma analysis and profile comparison. Results: Gamma passing rate of 91 % with DTA 3mm and 5% dose difference was obtained within the junction region, significantly greater passing rate above 95 % was obtained in the homogeneous region of the brain field. Conclusion: This study confirms that Gafchromic film dosimetry can be used to validate the efficacy of FIF feathering technique for cranio-spinal treatment. FIF technique with Gafchromic dosimetry may now be the new standard for delivering efficient and accurate cranio-spinal radiation with confidence.

    10. Remedial actions at the former Climax Uranium Company, Uranium Mill site, Grand Junction, Mesa County, Colorado. Volume 1, Text: Final environmental impact statement

      SciTech Connect (OSTI)

      1986-12-01

      This statement evaluates and compares the environmental impacts associated with the remedial actions of the residual radioactive materials remaining at the inactive uranium processing site and associated vicinity properties at Grand Junction, Mesa County, Colorado. This statement is also intended to aid the BLM in amending their management framework plans and final resource management plan, as well as assisting in compliance with the withdrawal application as appropriate. The site is a 114-acre tract of private and state owned land which contains approximately 3.1 million cubic yards of tailings and associated contaminated soils. The vicinity properties are homes, businesses, public buildings, and vacant lots which may have been contaminated during construction by the use of tailings as building material. An estimated 3465 vicinity properties would be cleaned up during remedial action of the tailings pile. The tailings were produced by the former Climax Uranium Company which processed uranium ore, which it sold to the US Atomic Energy Commission from 1951 to 1966 and to private sources from 1966 to 1970. This statement evaluates six alternatives for stabilization and disposal of the tailings and other contaminated materials: (1) No action. (2) Stabilization at the Grand Junction site. (3) Disposal at the Cheney Reservoir site with truck transport. (4) Disposal at the Cheney Reservoir site with train and truck transport. (5) Disposal at the Two Road site with truck transport. (6) Disposal at the Two Road site with train and truck transport. All of the alternatives except no action include remedial action at an estimated 3465 vicinity properties. Alternative 3 is DOE`s preferred alternative.

    11. Commercialization of New Lattice-Matched Multi-Junction Solar Cells Based on Dilute Nitrides: July 8, 2010 - March 7, 2012

      SciTech Connect (OSTI)

      Herb, J.

      2012-04-01

      Final Technical Progress Report for PV Incubator subcontract NAT-0-99013-03. The overall objective of this Incubator subcontract was to complete the work necessary to make commercial ready solar cells using the dilute nitride technology. The specific objectives of this program were aimed at completing the development of a triple-junction solar cell that incorporates a GaInNAs {approx}1eV subcell to the point of commercial readiness, and determining the cell reliability and, if necessary, identifying and eliminating process or material related issues that lead to early-life cell failures. There were three major objectives for Phase 1, each of which focuses on a key element of the solar cell that determines its performance in a commercial CPV system. One objective was to optimize the quality and performance of the key individual components making up the solar cell structure and then to optimize the integration of these components into a complete triple-junction cell. A second objective was to design and test anti-reflective coating that maximizes the light coupled into a 3J cell with a {approx}1 eV bottom cell bandgap. The third objective was to develop Highly Accelerated Life Tests (HALT) protocols and tools for identifying and correcting potential reliability problems. The Phase 2 objectives were a continuation of the work begun in Phase 1 but aimed at optimizing cell performance for commercial requirements. Phase 2 had four primary objectives: (1) develop a glass-matched anti-reflective coating (ARC) and optimize the cell/ARC to give good performance at 60C operating temperature, (2) optimize the cell for good operation at 60C and high concentration, and (3) complete the light biased HALT system and use it to determine what, if any, failures are observed, and (4) determine the reliability limits of the optimized cell.

    12. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

      SciTech Connect (OSTI)

      Masuda, T; Tomasulo, S; Lang, JR; Lee, ML

      2015-03-07

      We have investigated similar to 2.0 eV (AlxGa1-x)(0.51)In0.49P and similar to 1.9 eV Ga0.51In0.49P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (AlxGa1-x)(0.51)In0.49P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V-oc) ranging from 1.29 to 1.30 V for Ga0.51In0.49P cells, and 1.35-1.37 V for (AlxGa1-x)(0.51)In0.49P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W-oc = E-g/q - V-oc) of Ga0.51In0.49P cells to decrease from similar to 575 mV to similar to 565 mV, while that of (AlxGa1-x)(0.51)In0.49P cells remained nearly constant at 620 mV. The constant Woc as a function of substrate offcut for (AlxGa1-x)(0.51)In0.49P implies greater losses from non-radiative recombination compared with the Ga0.51In0.49P devices. In addition to larger Woc values, the (AlxGa1-x)(0.51)In0.49P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga0.51In0.49P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (AlxGa1-x)(0.51)In0.49P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells. (C) 2015 AIP Publishing LLC.

    13. sup 1 H and sup 31 P-NMR assignments of the non-exchangeable protons of the consensus acceptor exon:intron junction d(CpTpApCpApGpGpT)

      SciTech Connect (OSTI)

      Lown, J.W.; Chang, D.K.; Debart, F.; Rayner, B.; Imbach, J.L. )

      1986-06-01

      The consensus acceptor exon:intron junction d(CpTpApCpApGpGpT) has been synthesized by a modified phosphotriester method. The non-self complementary octamer exists in the single strand form in aqueous buffer at 20 degrees C as evidenced by temperature variable {sup 1}H-NMR and NOE measurements. The non-exchangeable proton assignments were secured using a combination of techniques including two-dimensional COSY, NOESY and the double quantum technique {sup 1}H-{sup 1}H-INADEQUATE as well as inversion recovery T1 experiments. The new technique of {sup 31}P-1H shift correlation is particularly valuable in removing certain ambiguities in the sugar proton assignments. Characteristic chemical shifts for the base protons which are determined by their immediate molecular environments are also useful in assignments. The consensus acceptor exon:intron junction adopts a random coil conformation in solution under the experimental conditions employed.

    14. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

      2016-02-12

      Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013more » e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. As a result, the ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.« less

    15. A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer

      SciTech Connect (OSTI)

      Zhu, M. Chong, H.; Vu, Q. B.; Vo, T.; Brooks, R.; Stamper, H.; Bennett, S.; Piccirillo, J.

      2015-05-25

      We report a stack structure which utilizes an in-plane exchange-biased magnetic layer to influence the coercivity of the bottom CoFeB layer in a CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction. By employing a thickness wedge deposition technique, we were able to study various aspects of this stack using vibrating sample magnetometer including: (1) the coupling between two CoFeB layers as a function of MgO thickness; and (2) the coupling between the bottom CoFeB and the in-plane magnetic layer as a function of Ta spacer thickness. Furthermore, modification of the bottom CoFeB coercivity allows one to measure tunneling magnetoresistance and resistance-area product (RA) of CoFeB/MgO/CoFeB in this pseudo-spin-valve format using current-in-plane-tunneling technique, without resorting to (Co/Pt){sub n} or (Co/Pd){sub n} multilayer pinning.

    16. Large-area triple-junction a-Si alloy production scaleup. Annual subcontract report, 17 March 1993--18 March 1994

      SciTech Connect (OSTI)

      Oswald, R.; Morris, J.

      1994-11-01

      The objective of this subcontract over its three-year duration is to advance Solarex`s photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance and expand the Solarex commercial production capacity. Solarex shall meet these objectives by improving the deposition and quality of the transparent front contact, by optimizing the laser patterning process, scaling-up the semiconductor deposition process, improving the back contact deposition, scaling-up and improving the encapsulation and testing of its a-Si:H modules. In the Phase 2 portion of this subcontract, Solarex focused on improving deposition of the front contact, investigating alternate feed stocks for the front contact, maximizing throughput and area utilization for all laser scribes, optimizing a-Si:H deposition equipment to achieve uniform deposition over large-areas, optimizing the triple-junction module fabrication process, evaluating the materials to deposit the rear contact, and optimizing the combination of isolation scribe and encapsulant to pass the wet high potential test. Progress is reported on the following: Front contact development; Laser scribe process development; Amorphous silicon based semiconductor deposition; Rear contact deposition process; Frit/bus/wire/frame; Materials handling; and Environmental test, yield and performance analysis.

    17. A homozygous nonsense mutation in the {alpha}3 chain gene of laminin 5 (LAMA3) in Herlitz junctional epidermolysis bullosa: Prenatal exclusion in a fetus at risk

      SciTech Connect (OSTI)

      McGrath, J.A.; Ciatti, S.; Christiano, A.M.

      1995-09-01

      Mutations in the three genes (LAMA3, LAMB3, and LAMC2) that encode the three chains ({alpha}3, {Beta}3, and {gamma}2, respectively) of laminin 5, a protein involved in epidermal-dermal adhesion, have been established as the genetic basis for the inherited blistering skin disorder, Herlitz junctional epidermolysis bullosa (H-JEB). In this study, we performed mutational analysis on genomic DNA from a child with H-JEB and identified a nonsense mutation in the {alpha}3 chain gene (LAMA3) consisting of a homozygous C-to-T transition resulting in a premature termination codon (CGA {r_arrow} TGA) on both alleles. The parents were shown to be heterozygous carriers of the same mutation. Direct mutation analysis was used to perform DNA-based prenatal diagnosis from a chorionic villus biopsy at 10 weeks` gestation in a subsequent pregnancy. The fetus was predicted to be genotypically normal with respect to the LAMA3 mutation. 15 refs., 1 fig.

    18. Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

      SciTech Connect (OSTI)

      Mller, Ralph Schrof, Julian; Reichel, Christian; Benick, Jan; Hermle, Martin

      2014-09-08

      The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implanted phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674?mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.

    19. Progress on First-Principles Calculations and Experimental Results of Single-crystalline Magnetic Tunnel Junctions with MgO barriers

      SciTech Connect (OSTI)

      Wang, Y.; Zhang, J.; Zhang, Xiaoguang; Wang, Shouguo; Han, Xiufeng

      2009-01-01

      Since the theoretical prediction and experimental observation of giant tunneling magnetoresistance (TMR) effect at room temperature in magnetic tunnel junctions (MTJs) with single-crystalline MgO(001) barrier, MgO-based MTJs have been extensively studied due to their broad potential applications in spintronic devices. In this paper, progress on theoretical calculations and experimental results in MgO-based MTJs is reported. Spin-dependent electronic structure and transport properties of MgO-based MTJs, including structures of Fe(001)/MgO/Fe, Fe(001)/FeO/MgO/Fe, Fe(001)/Mg/MgO/Fe, Fe(001)/Co/MgO/Co/Fe, and Fe(001)/MgO/Fe/MgO/Fe, have been studied using the Layer-KKR first-principles method. The quantitative result not only provide a better way to understand the electronic structures and spin-dependent transport properties of MgO-based MTJs, but also shows a direction to exploit new kinds of spintronic materials with high room-temperature TMR ratio.

    20. Linewidth of the harmonics in a microwave frequency comb generated by focusing a mode-locked ultrafast laser on a tunneling junction

      SciTech Connect (OSTI)

      Hagmann, Mark J.; Stenger, Frank S.; Yarotski, Dmitry A.

      2013-12-14

      Previous analyses suggest that microwave frequency combs (MFCs) with harmonics having extremely narrow linewidths could be produced by photodetection with a mode-locked ultrafast laser. In the MFC generated by focusing a passively mode-locked ultrafast laser on a tunneling junction, 200 harmonics from 74.254 MHz to 14.85 GHz have reproducible measured linewidths approximating the 1 Hz resolution bandwidth (RBW) of the spectrum analyzer. However, in new measurements at a RBW of 0.1 Hz, the linewidths are distributed from 0.12 to 1.17 Hz. Measurements and analysis suggest that, because the laser is not stabilized, the stochastic drift in the pulse repetition rate is the cause for the distribution in measured linewidths. It appears that there are three cases in which the RBW is (1) greater than, (2) less than, or (3) comparable with the intrinsic linewidth. The measured spectra in the third class are stochastic and may show two or more peaks at a single harmonic.

    1. Junctional and allele-specific residues are critical for MERS-CoV neutralization by an exceptionally potent germline-like antibody

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Ying, Tianlei; Prabakaran, Ponraj; Du, Lanying; Shi, Wei; Feng, Yang; Wang, Yanping; Wang, Lingshu; Li, Wei; Jiang, Shibo; Dimitrov, Dimiter S.; et al

      2015-09-15

      The MERS-CoV is an emerging virus, which already infected more than 1,300 humans with high (~36%) mortality. Here, we show that m336, an exceptionally potent human anti-MERS-CoV antibody, is almost germline with only one somatic mutation in the heavy chain. The structure of Fab m336 in complex with the MERS-CoV receptor-binding domain reveals that its IGHV1-69-derived heavy chain provides more than 85% binding surface and that its epitope almost completely overlaps with the receptor-binding site. Analysis of antibodies from 69 healthy humans suggests an important role of the V(D)J recombination-generated junctional and allele-specific residues for achieving high affinity of bindingmore » at such low levels of somatic hypermutation. Our results also have important implications for development of vaccine immunogens based on the newly identified m336 epitope as well as for elucidation of mechanisms of neutralization by m336-like antibodies and their elicitation in vivo.« less

    2. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

      SciTech Connect (OSTI)

      Leonard, J. T. Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

      2015-08-31

      We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

    3. Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

      SciTech Connect (OSTI)

      Ohsawa, T.; Ikeda, S.; Hanyu, T.; Ohno, H.; Endoh, T.

      2014-05-07

      The robustness of data load of metal–oxide–semiconductor/magnetic tunnel junction (MOS/MTJ) hybrid latches at power-on is examined by using Monte Carlo simulation with the variations in magnetoresistances for MTJs and in threshold voltages for MOSFETs involved in 90 nm technology node. Three differential pair type spin-transfer-torque-magnetic random access memory cells (4T2MTJ, 6T2MTJ, and 8T2MTJ) are compared for their successful data load at power-on. It is found that the 4T2MTJ cell has the largest pass area in the shmoo plot in TMR ratio (tunnel magnetoresistance ratio) and V{sub dd} in which a whole 256 kb cell array can be powered-on successfully. The minimum TMR ratio for the 4T2MTJ in 0.9 V < V{sub dd} < 1.9 V is 140%, while the 6T2MTJ and the 8T2MTJ cells require TMR ratio larger than 170%.

    4. Testing epitaxial Co{sub 1.5}Fe{sub 1.5}Ge(001) electrodes in MgO-based magnetic tunnel junctions

      SciTech Connect (OSTI)

      Neggache, A.; Hauet, T.; Petit-Watelot, S.; Boulet, P.; Andrieu, S.; Bertran, F.; Le Fèvre, P.; Ohresser, P.; Devolder, T.; Mewes, C.

      2014-06-23

      The ability of the full Heusler alloy Co{sub 1.5}Fe{sub 1.5}Ge(001) (CFG) to be a Half-Metallic Magnetic (HMM) material is investigated. Epitaxial CFG(001) layers were grown by molecular beam epitaxy. The results obtained using electron diffraction, X-ray diffraction, and X-ray magnetic circular dichroism are consistent with the full Heusler structure. The pseudo-gap in the minority spin density of state typical in HMM is examined using spin-resolved photoemission. Interestingly, the spin polarization found to be negative at E{sub F} in equimolar CoFe(001) is observed to shift to positive values when inserting Ge in CoFe. However, no pseudo-gap is found at the Fermi level, even if moderate magnetization and low Gilbert damping are observed as expected in HMM materials. Magneto-transport properties in MgO-based magnetic tunnel junctions using CFG electrodes are investigated via spin and symmetry resolved photoemission.

    5. EA-1710: Finding of No Significant Impact

      Broader source: Energy.gov [DOE]

      EnerDel, Inc., Expansion of Battery Manufacturing Capabilities at Indianapolis, Noblesville and Greenfield, Indiana

    6. Advanced natural gas-fired turbine system utilizing thermochemical recuperation and/or partial oxidation for electricity generation, greenfield and repowering applications

      SciTech Connect (OSTI)

      1997-03-01

      The performance, economics and technical feasibility of heavy duty combustion turbine power systems incorporating two advanced power generation schemes have been estimated to assess the potential merits of these advanced technologies. The advanced technologies considered were: Thermochemical Recuperation (TCR), and Partial Oxidation (PO). The performance and economics of these advanced cycles are compared to conventional combustion turbine Simple-Cycles and Combined-Cycles. The objectives of the Westinghouse evaluation were to: (1) simulate TCR and PO power plant cycles, (2) evaluate TCR and PO cycle options and assess their performance potential and cost potential compared to conventional technologies, (3) identify the required modifications to the combustion turbine and the conventional power cycle components to utilize the TCR and PO technologies, (4) assess the technical feasibility of the TCR and PO cycles, (5) identify what development activities are required to bring the TCR and PO technologies to commercial readiness. Both advanced technologies involve the preprocessing of the turbine fuel to generate a low-thermal-value fuel gas, and neither technology requires advances in basic turbine technologies (e.g., combustion, airfoil materials, airfoil cooling). In TCR, the turbine fuel is reformed to a hydrogen-rich fuel gas by catalytic contact with steam, or with flue gas (steam and carbon dioxide), and the turbine exhaust gas provides the indirect energy required to conduct the endothermic reforming reactions. This reforming process improves the recuperative energy recovery of the cycle, and the delivery of the low-thermal-value fuel gas to the combustors potentially reduces the NO{sub x} emission and increases the combustor stability.

    7. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

      SciTech Connect (OSTI)

      Masuda, Taizo Tomasulo, Stephanie; Lang, Jordan R.; Lee, Minjoo Larry

      2015-03-07

      We have investigated ∼2.0 eV (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P and ∼1.9 eV Ga{sub 0.51}In{sub 0.49}P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V{sub oc}) ranging from 1.29 to 1.30 V for Ga{sub 0.51}In{sub 0.49}P cells, and 1.35–1.37 V for (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W{sub oc} = E{sub g}/q − V{sub oc}) of Ga{sub 0.51}In{sub 0.49}P cells to decrease from ∼575 mV to ∼565 mV, while that of (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells remained nearly constant at 620 mV. The constant W{sub oc} as a function of substrate offcut for (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P implies greater losses from non-radiative recombination compared with the Ga{sub 0.51}In{sub 0.49}P devices. In addition to larger W{sub oc} values, the (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga{sub 0.51}In{sub 0.49}P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells.

    8. A novel investigation on carbon nanotube/ZnO, Ag/ZnO and Ag/carbon nanotube/ZnO nanowires junctions for harvesting piezoelectric potential on textile

      SciTech Connect (OSTI)

      Khan, Azam Edberg, Jesper; Nur, Omer; Willander, Magnus

      2014-07-21

      In the present work, three junctions were fabricated on textile fabric as an alternative substrate for harvesting piezoelectric potential. First junction was formed on ordinary textile as (textile/multi-walled carbon nanotube film/zinc oxide nanowires (S1: T/CNTs/ZnO NWs)) and the other two were formed on conductive textile with the following layer sequence: conductive textile/zinc oxide nanowires (S2: CT/ZnO NWs) and conductive textile/multi-walled carbon nanotubes film/zinc oxide nanowires (S3: CT/CNTs/ZnO NWs). Piezoelectric potential was harvested by using atomic force microscopy in contact mode for the comparative analysis of the generated piezoelectric potential. ZnO NWs were synthesized by using the aqueous chemical growth method. Surface analysis of the grown nanostructures was performed by using scanning electron microscopy and transmission electron microscopy. The growth orientation and crystalline size were studied by using X-ray diffraction technique. This study reveals that textile as an alternative substrate have many features like cost effective, highly flexible, nontoxic, light weight, soft, recyclable, reproducible, portable, wearable, and washable for nanogenerators fabrication with acceptable performance and with a wide choice of modification for obtaining large amount of piezoelectric potential.

    9. Octonary resistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Yue -Wei Yin; Tao, Jing; Huang, Wei -Chuan; Liu, Yu -Kuai; Yang, Sheng -Wei; Dong, Si -Ning; Zhu, Yi -Mei; Li, Qi; Li, Xiao -Guang

      2015-10-06

      General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45°more » and 90°) magnetic configurations. As a result, combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.« less

    10. Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} heterostructure

      SciTech Connect (OSTI)

      Ou, Xin; Xu, Bo Yin, Qiaonan; Xia, Yidong; Yin, Jiang; Liu, Zhiguo; Gong, Changjie; Lan, Xuexin

      2014-05-15

      In this work, we fabricate BaTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO{sub 3} substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling behaviors with the resulting tunneling electroresistance value reaching about 10{sup 2} in ultrathin BTO films (?1.2 nm) at room temperature. Moreover, local poling areas with different conductivity are finally achieved by controlling the relative proportion of upward and downward domains, and different poling areas exhibit stable transport properties.

    11. Search for: All records | SciTech Connect

      Office of Scientific and Technical Information (OSTI)

      Brophy, John R. (1) Buratti, Bonnie J. (1) Ervin, Joan (1) Fernandez, Yan R. (1) Grundy, ... John R. ; Buratti, Bonnie J. ; Ervin, Joan ; et al Today, our questions and ...

    12. Top Crop Wind Farm | Open Energy Information

      Open Energy Info (EERE)

      In Service Owner Horizon-EDPR Developer Horizon-EDPR Location GrundyLivingstonLa Salle Counties IL Coordinates 41.159826, -88.637381 Show Map Loading map......

    13. Search for: All records | SciTech Connect

      Office of Scientific and Technical Information (OSTI)

      ... Buratti, Bonnie J. (1) Ervin, Joan (1) Fernandez, Yan R. (1) Grundy, Will (1) Khan, Mohammed Omair (1) King, David Q. (1) Lang, Jared (1) Meech, Karen J. (1) Newhouse, Alan (1) ...

    14. Wisdom Way Solar Village

      SciTech Connect (OSTI)

      2009-03-10

      This article gives an overview of Wisdom Way Village, a community of affordable, sustainable solar homes in Greenfield, MA.

    15. EA-1710: Final Environmental Assessment

      Broader source: Energy.gov [DOE]

      Financial Assistance to Enerdel, Inc. for its Expansion of Battery Manufacturing Capabilities at Indianapolis, Noblesville and Greenfield, Indiana

    16. Blaine County, Oklahoma: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      in Blaine County, Oklahoma Canton, Oklahoma Geary, Oklahoma Greenfield, Oklahoma Hitchcock, Oklahoma Hydro, Oklahoma Longdale, Oklahoma Okeene, Oklahoma Watonga, Oklahoma...

    17. Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

      SciTech Connect (OSTI)

      Sogabe, Tomah Ogura, Akio; Okada, Yoshitaka

      2014-02-21

      Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR ?V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR??V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR??V{sub bias} measurements. The profile of SR?V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

    18. Non-Ideal p-n junction Diode of Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6, 0.7) Thin Films

      SciTech Connect (OSTI)

      Mustafa, Falah I.; Gupta, Shikha; Goyal, N.; Tripathi, S. K.

      2011-12-12

      We have made diodes consisting of the same alloy i.e. Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6 and 0.7), but change the concentration of Sb metal from 40% to 70% atomic weight percentage. It is observed from the Hall measurements that the nature of charge carriers have changed from p- to n-type at x = 0.6 for Sb{sub x}Se{sub 1-x}. We have measured I-V characteristics of four p-n junction diodes i.e. p-Sb{sub 2}Se{sub 3}/n-Sb{sub 3}Se{sub 2}, p-Sb{sub 2}Se{sub 3}/n-Sb{sub 7}Se{sub 3}, p-SbSe/n-Sb{sub 3}Se{sub 2}, p-SbSe/n-Sb{sub 7}Se{sub 3}. From the I-V plots we have calculated the parameters as built-in voltage (V{sub bi}), forward resistance (R{sub f}), ideal factor (n), saturation current (I{sub o}), breakdown current (I{sub Bd}) and breakdown voltage (V{sub Bd}).

    19. Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based magnetic tunneling junctions

      SciTech Connect (OSTI)

      Chae, Kyo-Suk; Park, Jea-Gun

      2015-04-21

      For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer. Thus, the TMR ratio peaked at t{sub Fe} = 0.4 nm: i.e., 120% at 29 Ωμm{sup 2}.

    20. Tandem junction amorphous semiconductor photovoltaic cell

      DOE Patents [OSTI]

      Dalal, V.L.

      1983-06-07

      A photovoltaic stack comprising at least two p[sup +]i n[sup +] cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p[sup +]i n[sup +] cells. 3 figs.

    1. Tandem junction amorphous semiconductor photovoltaic cell

      DOE Patents [OSTI]

      Dalal, Vikram L.

      1983-01-01

      A photovoltaic stack comprising at least two p.sup.+ i n.sup.+ cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p.sup.+ i n.sup.+ cells.

    2. Design of Flexible-Duct Junction Boxes

      Broader source: Energy.gov [DOE]

      This presentation was delivered at the U.S. Department of Energy Building America Technical Update meeting on April 29-30, 2013, in Denver, Colorado.

    3. Electric field dependence of junction magnetoresistance inmagnetite...

      Office of Scientific and Technical Information (OSTI)

      We have fabricated Fesub 3Osub 4p-Si heterojunction using pulsed laser deposition technique and explored its electro-magnetic transport properties. The heterojunction exhibits ...

    4. Liquid junction schottky barrier solar cell

      DOE Patents [OSTI]

      Williams, Richard

      1980-01-01

      A mixture of ceric ions (Ce.sup.+4) and cerous ions (Ce.sup.+3) in an aqueous electrolyte solution forms a Schottky barrier at the interface between an active region of silicon and the electrolyte solution. The barrier height obtained for hydrogenated amorphous silicon using the Ce.sup.+4 /Ce.sup.+3 redox couple is about 1.7 eV.

    5. Octonary resistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions

      SciTech Connect (OSTI)

      Yue -Wei Yin; Tao, Jing; Huang, Wei -Chuan; Liu, Yu -Kuai; Yang, Sheng -Wei; Dong, Si -Ning; Zhu, Yi -Mei; Li, Qi; Li, Xiao -Guang

      2015-10-06

      General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45° and 90°) magnetic configurations. As a result, combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.

    6. Aerial photographic interpretation of lineaments and faults in late cenozoic deposits in the Eastern part of the Benton Range 1:100,000 quadrangle and the Goldfield, Last Chance Range, Beatty, and Death Valley Junction 1:100,000 quadrangles, Nevada and California

      SciTech Connect (OSTI)

      Reheis, M.C.; Noller, J.S.

      1991-09-01

      Lineaments and faults in Quaternary and late Tertiary deposits in the southern part of the Walker Lane are potentially active and form patterns that are anomalous with respect to the typical fault patterns in most of the Great Basin. Little work has been done to identify and characterize these faults, with the exception of those in the Death Valley-Furnace Creek (DVFCFZ) fault system and those in and near the Nevada Test Site. Four maps at a scale of 1:100,000 summarize the existing knowledge about these lineaments and faults based on extensive aerial-photo interpretation, limited field investigations, and published geologic maps. The lineaments and faults in all four maps can be divided geographically into two groups. The first group includes west- to north-trending lineaments and faults associated with the DVFCFZ and with the Pahrump fault zone in the Death Valley Junction quadrangle. The second group consists of north- to east-northeast-trending lineaments and faults in a broad area that lies east of the DVFCFZ and north of the Pahrump fault zone. Preliminary observations of the orientations and sense of slip of the lineaments and faults suggest that the least principle stress direction is west-east in the area of the first group and northwest-southeast in the area of the second group. The DVFCFZ appears to be part of a regional right-lateral strike-slip system. The DVFCFZ steps right, accompanied by normal faulting in an extensional zone, to the northern part of the Walker Lane a the northern end of Fish Lake Valley (Goldfield quadrangle), and appears to step left, accompanied by faulting and folding in a compressional zone, to the Pahrump fault zone in the area of Ash Meadows (Death Valley Junction quadrangle). 25 refs.

    7. Building America Whole-House Solutions for Existing Homes: Conway Street

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      Apartments - Greenfield, Massachusetts | Department of Energy Conway Street Apartments - Greenfield, Massachusetts Building America Whole-House Solutions for Existing Homes: Conway Street Apartments - Greenfield, Massachusetts Through recent research efforts, CARB has been evaluating strategies and technologies that can make dramatic improvements in energy performance in multifamily buildings. In this project, the team helped to transform a 100-year-old empty school building into 12 high

    8. Building America Whole-House Solutions for New Homes: Rural Development,

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      Inc., Greenfield, Massachusetts | Department of Energy Rural Development, Inc., Greenfield, Massachusetts Building America Whole-House Solutions for New Homes: Rural Development, Inc., Greenfield, Massachusetts Case study of Rural Development Inc. who worked with Building America research partner CARB to design affordable HERS-8 homes (60 w/o PV), with double-stud walls heavy insulation, low-load sealed-combustion gas space heaters, triple-pane windows, solar water heating, and PV. Rural

    9. Building America Case Study: Indirect Solar Water Heating Systems...

      Energy Savers [EERE]

      Indirect Solar Water Heating Systems in Single-Family Homes Greenfield, Massachusetts ... Building Component: Solar water heating Application: Single-family Years Tested: 2010-2013 ...

    10. Beemer Energy | Open Energy Information

      Open Energy Info (EERE)

      Name: Beemer Energy Place: Delaware Product: Engaged in the development of green-field ethanol sites, the conversion of existing industrial facilities to ethanol production and the...

    11. KL Energy Corp Formerly KL Process Design Group | Open Energy...

      Open Energy Info (EERE)

      provider of engineering, procurement, and contracting. Operates both greenfield and brownfield projects. References: KL Energy Corp. (Formerly KL Process Design Group)1 This...

    12. Meadow Ridge | Open Energy Information

      Open Energy Info (EERE)

      (community owned) Energy Purchaser Central Iowa Power Cooperative Location Greenfield IA Coordinates 41.39004255, -94.44637299 Show Map Loading map... "minzoom":false,"mapp...

    13. Building America Whole-House Solutions for New Homes: Rural Developmen...

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      Development, Inc., Greenfield, Massachusetts Case study of Rural Development Inc. who worked with Building America research partner CARB to design affordable HERS-8 homes (60 ...

    14. Building America Whole-House Solutions for Existing Homes: Cascade...

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      More Documents & Publications Building America Whole-House Solutions for Existing Homes: Conway Street Apartments - Greenfield, Massachusetts Building America Whole-House Solutions ...

    15. Northeast Sustainable Energy Association | Open Energy Information

      Open Energy Info (EERE)

      Association Jump to: navigation, search Logo: Northeast Sustainable Energy Association Name: Northeast Sustainable Energy Association Address: 50 Miles Street Place: Greenfield,...

    16. Northeast Sustainable Energy Association (Massachusetts) | Open...

      Open Energy Info (EERE)

      (Massachusetts) Jump to: navigation, search Name: Northeast Sustainable Energy Association Address: 50 Miles Street Place: Greenfield, Massachusetts Zip: 01301 Region: Greater...

    17. Photon Energy AS | Open Energy Information

      Open Energy Info (EERE)

      Zip: 120 00 Sector: Solar Product: Czech-based developer of greenfield and rooftop photovoltaic solar power installations. Coordinates: 50.079083, 14.43323 Show Map Loading...

    18. Sinosol Mazzanti JV | Open Energy Information

      Open Energy Info (EERE)

      Castelfranco, Italy Sector: Solar Product: Italy-based developer, builder and operator of rooftop and greenfield solar projects. References: Sinosol & Mazzanti JV1 This article...

    19. Adair County, Iowa: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      Zone Number 5 Climate Zone Subtype A. Places in Adair County, Iowa Adair, Iowa Bridgewater, Iowa Casey, Iowa Fontanelle, Iowa Greenfield, Iowa Orient, Iowa Stuart, Iowa...

    20. Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

      SciTech Connect (OSTI)

      Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J.; Fan, Dongsheng; Yu, Shuiqing; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 ; Zhao, Yanfei; Lee, Joon Sue; Wang, Jian; The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 ; Wang, Zhiming M.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054; Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083

      2013-07-15

      High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

    1. Quantification of Shallow-junction Dopant Loss during CMOS Process

      SciTech Connect (OSTI)

      Buh, G.H.; Park, T.; Jee, Y.; Hong, S.J.; Ryoo, C.; Yoo, J.; Lee, J.W.; Yon, G.H.; Jun, C.S.; Shin, Y.G.; Chung, U.-In; Moon, J.T.

      2005-09-09

      We analyzed dopant concentration and profiles in source drain extension (SDE) by using in-line low energy electron induced x-ray emission spectrometry (LEXES), four point probe (FPP), and secondary ion mass spectroscopy (SIMS). By monitoring the dopant dose with LEXES, dopant loss in implantation and annealing process was successfully quantified. To measure the actual SDE sheet resistance in CMOS device structure without probe penetration in FPP, we fabricated a simple SDE sheet-resistance test structure (SSTS) by modifying a conventional CMOS process. It was found that the sheet resistances determined with SSTS are larger than those measured with FPP. There are three mechanisms of dopants loss in CMOS process: 1) wet-etching removal during photo resist cleaning, 2) out-diffusion, and 3) deactivation by post-thermal process. We quantified the loss of the dopant in SDE during the CMOS process, and found that the wet-etching removal and out-diffusion are the most significant causes for dopant loss in n-SDE and p-SDE, respectively.

    2. Method of junction formation for CIGS photovoltaic devices

      DOE Patents [OSTI]

      Delahoy, Alan E.

      2010-01-26

      Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

    3. Method of junction formation for CIGS photovoltaic devices

      DOE Patents [OSTI]

      Delahoy, Alan E.

      2006-03-28

      Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

    4. Patterning Smaller Junctions for Ultrathin Devices | U.S. DOE...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      Chemical mapping with Raman spectroscopy (bottom) validates the controlled conversion of MoSe2 to MoS2 in the exposed regions. The Science Making faster, more powerful electronics ...

    5. Nano-superconducting quantum interference devices with suspended junctions

      SciTech Connect (OSTI)

      Hazra, D.; Hasselbach, K.; Kirtley, J. R.

      2014-04-14

      Nano-Superconducting Quantum Interference Devices (nano-SQUIDs) are usually fabricated from a single layer of either Nb or Al. We describe here a simple method for fabricating suspended nano-bridges in Nb/Al thin-film bilayers. We use these suspended bridges, which act as Josephson weak links, to fabricate nano-SQUIDs which show critical current oscillations at temperatures up to 1.5?K and magnetic flux densities up to over 20?mT. These nano-SQUIDs exhibit flux modulation depths intermediate between all-Al and all-Nb devices, with some of the desirable characteristics of both. The suspended geometry is attractive for magnetic single nanoparticle measurements.

    6. Molecular Series-Tunneling Junctions (Journal Article) | SciTech...

      Office of Scientific and Technical Information (OSTI)

      Sponsoring Org: USDOE SC Office of Basic Energy Sciences (SC-22) Country of Publication: United States Language: English Subject: catalysis (homogeneous), solar (photovoltaic), ...

    7. Amorphous silicon passivated contacts for diffused junction silicon solar cells

      SciTech Connect (OSTI)

      Bullock, J. Yan, D.; Wan, Y.; Cuevas, A.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

      2014-04-28

      Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopyenergy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

    8. Solar Junction Develops World Record Setting Concentrated Photovoltaic...

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      the company's concentrated photovoltaic technology that also set a world record for conversion efficiency. The company's cell technology relies on inexpensive lenses to magnify...

    9. EERE Success Story-Solar Junction Develops World Record Setting...

      Broader source: Energy.gov (indexed) [DOE]

      of the company's concentrated photovoltaic technology that also set a world ... | NREL's PV Incubator: Where Solar Photovoltaic Records Go to be Broken Project ...

    10. Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin...

      Office of Scientific and Technical Information (OSTI)

      Publication Date: 2013-07-09 OSTI Identifier: 1103762 Type: Publisher's Accepted Manuscript Journal Name: Physical Review Letters Additional Journal Information: Journal Volume: ...

    11. Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined...

      Office of Scientific and Technical Information (OSTI)

      Save Share this Record Citation Formats MLA APA Chicago Bibtex Export Metadata Endnote Excel CSV XML Send to Email Send to Email Email address: Content: Close Send ...

    12. Phase diagram of Josephson junction betweensandssuperconductors...

      Office of Scientific and Technical Information (OSTI)

      Society Sponsoring Org: USDOE Country of Publication: United States Language: English Word Cloud More Like This Free Publicly Accessible Full Text Publisher's Accepted Manuscript...

    13. Hot-junction electrode members for copper/silver chalcogenides

      DOE Patents [OSTI]

      Hampl, Jr., Edward F.

      1979-12-25

      Tungsten, molybdenum, and alloys thereof are useful as electrode members for thermoelectric legs made from chalcogenides of copper and/or silver.

    14. LM Completes the Grand Junction, Colorado, Site Historical Wall Display

      Broader source: Energy.gov [DOE]

      On Wednesday, October 8, a new display was unveiled at DOE Headquarters in Washington, DC, by DOE Deputy Under Secretary David Klaus. The display celebrates more than 70 years of operations at the...

    15. Experimental measurement of stress at a four-domain junction...

      Office of Scientific and Technical Information (OSTI)

      patterns in the transmission electron microscope. ... Analysis of the data showed that large stresses were ... TRANSMISSION ELECTRON MICROSCOPY Word Cloud More Like ...

    16. NREL: Awards and Honors - Triple-Junction Terrestrial Concentrator...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      of power and produce as much as 86.3 kWh of electricity during a typical year under a Phoenix, AZ sun. This means that 100 to 150 of these cells could produce enough electricity...

    17. Farmers Electric Coop, Inc | Open Energy Information

      Open Energy Info (EERE)

      search Name: Farmers Electric Coop, Inc Place: Iowa Website: www.farmersrec.com Facebook: https:www.facebook.comFarmersElectricGreenfield Outage Hotline: 1-800-397-4821...

    18. Testimony of David L. Goodin President and CEO, MDU Resources...

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      ... N.D. It's the first greenfield refinery built in the United States since 1976. ... Representatives, February 11, 2014 2 The Value of US Power Diversity, http:www.ihs.com...

    19. Publications

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      ... Moore, D S, S D McGrane, M T Greenfield, R J Scharff, and R E Chalmers. "Use of the Gerchberg-Saxton Algorithm in Optimal Coherent anti-Stokes Raman Spectroscopy." Analytical and ...

    20. VEE-0035- In the Matter of Rice Oil Company, Inc.

      Office of Energy Efficiency and Renewable Energy (EERE)

      On October 22, 1996, Rice Oil Company, Inc. (Rice) of Greenfield, Massachusetts filed an Application for Exception with the Office of Hearings and Appeals (OHA) of the Department of Energy (DOE)....