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Sample records for junction greenfield grundy

  1. 1 CONFIDENTIAL1 CONFIDENTIAL GreenField Solar

    E-Print Network [OSTI]

    Rollins, Andrew M.

    &M costs o Lower manufacturing costs Triple-junction cells difficult to densely pack PhotoVoltTM cells can1 CONFIDENTIAL1 CONFIDENTIAL GreenField Solar: Testing and Reliability needs of CPV Systems Dr-south movements only required once a day West East #12;CONFIDENTIAL 7 Industry-wide issues - Solar Issues from

  2. Grundy Electric Coop, Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:ofEniaElectricHydroLegal DocumentsGrotonGrowdieselGrundy

  3. Greenfield Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,Solar Jump to: navigation, search Name: Greenfield Solar

  4. "Diffusion of Innovation: Solar Oven Use in Lesotho (Africa)." Grundy, William and Roy Grundy. Advances in Solar Cooking: Proceedings of the 2nd International Conference on Solar Cooker Use and Technology. Shyam S. Nandwani, ed. July 12-15, 1994.

    E-Print Network [OSTI]

    Noble, William Stafford

    "Diffusion of Innovation: Solar Oven Use in Lesotho (Africa)." Grundy, William and Roy Grundy and Technology. Shyam S. Nandwani, ed. July 12-15, 1994. pp. 240-247. 1 DIFFUSION OF INNOVATION: SOLAR OVEN USE of Innovation: Solar Oven Use in Lesotho (Africa)." Grundy, William and Roy Grundy. Advances in Solar Cooking

  5. Greenfield, Minnesota: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,Solar Jump to: navigation, search Name: Greenfield

  6. Greenfield, Iowa: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,Solar Jump to: navigation, search Name: Greenfield SolarIowa:

  7. Greenfield Alternative Study LEU-Mo Fuel Fabrication Facility

    SciTech Connect (OSTI)

    Washington Division of URS

    2008-07-01

    This report provides the initial “first look” of the design of the Greenfield Alternative of the Fuel Fabrication Capability (FFC); a facility to be built at a Greenfield DOE National Laboratory site. The FFC is designed to fabricate LEU-Mo monolithic fuel for the 5 US High Performance Research Reactors (HPRRs). This report provides a pre-conceptual design of the site, facility, process and equipment systems of the FFC; along with a preliminary hazards evaluation, risk assessment as well as the ROM cost and schedule estimate.

  8. Greenfield, New Hampshire: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,Solar Jump to: navigation, search Name: GreenfieldNew

  9. Nanotube junctions

    DOE Patents [OSTI]

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon; Zettl, Alexander Karlwalte

    2004-12-28

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  10. Nanotube junctions

    DOE Patents [OSTI]

    Crespi, Vincent Henry (Darien, IL); Cohen, Marvin Lou (Berkeley, CA); Louie, Steven Gwon Sheng (Berkeley, CA); Zettl, Alexander Karlwalter (Kensington, CA)

    2003-01-01

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  11. Josephson junction

    DOE Patents [OSTI]

    Wendt, J.R.; Plut, T.A.; Martens, J.S.

    1995-05-02

    A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material. 10 figs.

  12. THERMAL EVALUATION OF THE CONCEPTUAL DHLW DISPOSAL CONTAINER LOADED WITH PU/CS GREENFIELD GLASS (SCPB: N/A)

    SciTech Connect (OSTI)

    T.L. Lotz

    1995-11-13

    This analysis is prepared by the Mined Geologic Disposal System (MGDS) Waste Package Development Department (WPDD) as specified in the Waste Package Implementation Plan (pp. 4-8,4-11,4-24,5-1, and 5-13; Ref. 5.10) and Waste Package Plan (pp. 3-15,3-17, and 3-24; Ref. 5.9). The design data request addressed herein is: Characterize the conceptual Defense High Level Waste (DHLW) Disposal Container design to show that the design is feasible for use in the MGDS environment when loaded with a plutonium/cesium greenfield glass waste form. The purpose of this analysis is to respond to a concern that the long-term disposal thermal issues for the conceptual DHLW disposal container design do not preclude compatibility with the MGDS if it is loaded with alternate waste forms. The objective of this analysis is to provide thermal parameter information for the conceptual DHLW disposal container design loaded with an alternative waste form containing a plutonium/cesium mixture under nominal MGDS repository conditions. The results are intended to show that the design loaded with this alternative waste form has a reasonable chance to meet the MGDS design requirements for normal MGDS operation and to provide the required guidance to determining the major design issues for future design efforts. Future design efforts will focus on specific DHLW vendor designs and improved waste form data when they become available.

  13. Three-junction solar cell

    DOE Patents [OSTI]

    Ludowise, Michael J. (Cupertino, CA)

    1986-01-01

    A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

  14. Josephson junction Q-spoiler

    DOE Patents [OSTI]

    Clarke, J.; Hilbert, C.; Hahn, E.L.; Sleator, T.

    1986-03-25

    An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

  15. Josephson junction Q-spoiler

    DOE Patents [OSTI]

    Clarke, John (Berkeley, CA); Hilbert, Claude (Austin, TX); Hahn, Erwin L. (Berkeley, CA); Sleator, Tycho (Berkeley, CA)

    1988-01-01

    An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

  16. The Junction Diode Basic Operation

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    biased diode. Figure 1(b) shows the diode with a battery connected across it. The polarity of the battery in the p-type side away from the junction. No current can flow. The diode is said to be reverse biased. Figure 1(c) shows the diode with the battery polarity reversed. The battery now tends to cancel out

  17. Greenfield FELs John Galayda, SLAC

    E-Print Network [OSTI]

    coverage (fundamental) 3 (5)1 (8)# FEL undulators 2012 (?)2009 (2013)Operation start TESLA (upgrade) LCLS (upgrade) X-ray FEL Projects in Preconstruction #12;Status of X-ray FELs in 2015 · LCLS and TESLA FEL ­ Self-seeding ­ Ultrashort pulse · HGHG scheme #12;SASE FEL for 30 keV · LCLS reference parameters: =

  18. Greenfield Wind | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages RecentPlantMagmaIncentivesEnergyGreenVoltsGreener

  19. String Junctions and Holographic Interfaces

    E-Print Network [OSTI]

    Marco Chiodaroli; Michael Gutperle; Ling-Yan Hung; Darya Krym

    2010-11-22

    In this paper we study half-BPS type IIB supergravity solutions with multiple $AdS_3\\times S^3\\times M_4$ asymptotic regions, where $M_4$ is either $T^4$ or $K_3$. These solutions were first constructed in [1] and have geometries given by the warped product of $AdS_2 \\times S^2 \\times M_4 $ over $\\Sigma$, where $\\Sigma$ is a Riemann surface. We show that the holographic boundary has the structure of a star graph, i.e. $n$ half-lines joined at a point. The attractor mechanism and the relation of the solutions to junctions of self-dual strings in six-dimensional supergravity are discussed. The solutions of [1] are constructed introducing two meromorphic and two harmonic functions defined on $\\Sigma$. We focus our analysis on solutions corresponding to junctions of three different conformal field theories and show that the conditions for having a solution charged only under Ramond-Ramond three-form fields reduce to relations involving the positions of the poles and the residues of the relevant harmonic and meromorphic functions. The degeneration limit in which some of the poles collide is analyzed in detail. Finally, we calculate the holographic boundary entropy for a junction of three CFTs and obtain a simple expression in terms of poles and residues.

  20. Method for shallow junction formation

    DOE Patents [OSTI]

    Weiner, K.H.

    1996-10-29

    A doping sequence is disclosed that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated. 8 figs.

  1. Solar Junction Develops World Record Setting Concentrated Photovoltaic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell Solar Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell April 18, 2013 -...

  2. Grand Junction Office Founder Honored at the Philip C. Leahy...

    Office of Environmental Management (EM)

    Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park Dedication and Open House Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park...

  3. Microwave Photon Counter Based on Josephson Junctions

    E-Print Network [OSTI]

    Y. -F. Chen; D. Hover; S. Sendelbach; L. Maurer; S. T. Merkel; E. J. Pritchett; F. K. Wilhelm; R. McDermott

    2011-11-07

    We describe a microwave photon counter based on the current-biased Josephson junction. The junction is tuned to absorb single microwave photons from the incident field, after which it tunnels into a classically observable voltage state. Using two such detectors, we have performed a microwave version of the Hanbury Brown and Twiss experiment at 4 GHz and demonstrated a clear signature of photon bunching for a thermal source. The design is readily scalable to tens of parallelized junctions, a configuration that would allow number-resolved counting of microwave photons.

  4. Thermoelectric efficiency of critical quantum junctions

    E-Print Network [OSTI]

    Mihail Mintchev; Luca Santoni; Paul Sorba

    2013-10-30

    We derive the efficiency at maximal power of a scale-invariant (critical) quantum junction in exact form. Both Fermi and Bose statistics are considered. We show that time-reversal invariance is spontaneously broken. For fermions we implement a new mechanism for efficiency enhancement above the Curzon-Ahlborn bound, based on a shift of the particle energy in each heat reservoir, proportional to its temperature. In this setting fermionic junctions can even reach at maximal power the Carnot efficiency. The bosonic junctions at maximal power turn out to be less efficient then the fermionic ones.

  5. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO)

    1992-01-01

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

  6. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, J.M.; Kurtz, S.R.

    1992-11-24

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

  7. Semiconductor tunnel junction with enhancement layer

    DOE Patents [OSTI]

    Klem, John F. (Sandia Park, NM); Zolper, John C. (Albuquerque, NM)

    1997-01-01

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

  8. Semiconductor tunnel junction with enhancement layer

    DOE Patents [OSTI]

    Klem, J.F.; Zolper, J.C.

    1997-10-21

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.

  9. Multi-junction solar cell device

    DOE Patents [OSTI]

    Friedman, Daniel J. (Lakewood, CO); Geisz, John F. (Wheat Ridge, CO)

    2007-12-18

    A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

  10. Methods for the fabrication of thermally stable magnetic tunnel junctions

    DOE Patents [OSTI]

    Chang, Y. Austin (Middleton, WI); Yang, Jianhua J. (Madison, WI); Ladwig, Peter F. (Hutchinson, MN)

    2009-08-25

    Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.

  11. Junction-side illuminated silicon detector arrays

    DOE Patents [OSTI]

    Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

    2004-03-30

    A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

  12. Macroscopic quantum tunneling in spin filter ferromagnetic Josephson junctions

    E-Print Network [OSTI]

    Massarotti, D.; Pal, A.; Rotoli, G.; Longobordi, L.; Blamire, M. G.; Tafuri, F.

    2015-06-09

    junctions and the demonstration of triplet supercurrents have suggested the potential of a dissipationless version of spintronics based on unconventional superconductivity. Here we demonstrate evidence for active quantum applications of S-F-S junctions...

  13. Stabilization of Ion Concentration Polarization Using a Heterogeneous Nanoporous Junction

    E-Print Network [OSTI]

    Kim, Pilnam

    We demonstrate a recycled ion-flux through heterogeneous nanoporous junctions, which induce stable ion concentration polarization with an electric field. The nanoporous junctions are based on integration of ionic hydrogels ...

  14. An ab-initio analysis of bimetallic oligoaniline molecular junctions 

    E-Print Network [OSTI]

    Wang, Michael Wei-Lueng

    2007-09-17

    The electron transport characteristics of Oligoaniline molecular junctions terminated with thiol-ends are analyzed with the density functional theory and the Green's function approach. The molecular junction consists of ...

  15. Complementary junction heterostructure field-effect transistor

    DOE Patents [OSTI]

    Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

    1995-12-26

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

  16. Complementary junction heterostructure field-effect transistor

    DOE Patents [OSTI]

    Baca, Albert G. (Albuquerque, NM); Drummond, Timothy J. (Albuquerque, NM); Robertson, Perry J. (Albuquerque, NM); Zipperian, Thomas E. (Albuquerque, NM)

    1995-01-01

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

  17. High voltage series connected tandem junction solar battery

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  18. Transmission eigenvalue distributions in highly conductive molecular junctions

    E-Print Network [OSTI]

    Bergfield, Justin P; Barr, Joshua D; Stafford, Charles A

    2012-01-01

    Transmission eigenvalue distributions in highly conductivesingle-molecule junction; transmission eigenchannels Openuniquely characterized by its transmission eigenvalues ? n .

  19. EA-0930: Facility Operations at the U.S. DOE Grand Junction Projects Office, Grand Junction, Colorado

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of the proposal to expand and upgrade the U.S. Department of Energy's Grand Junction Projects Office facilities and operations in Grand Junction, Colorado.

  20. Tandem junction amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  1. Josephson Junctions Fabricated by Focussed Ion Beam

    E-Print Network [OSTI]

    Hadfield, Robert Hugh

    at temperature T: ??? ? ??? ??= T2k ?(T) eR TI BN C tanh )( 2 ? , (2.26) where RN is the normal state resistance of the junction (temperature independent in low TC devices) and ? is the energy gap of the (identical) superconducting electrodes. BCS theory...

  2. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  3. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  4. Measuring Vacuum Polarization with Josephson Junctions

    SciTech Connect (OSTI)

    Penin, Alexander A. [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2J1 (Canada) and Institute for Nuclear Research of Russian Academy of Sciences, 117312 Moscow (Russian Federation)

    2010-03-05

    We argue that the vacuum polarization by the virtual electron-positron pairs can be measured by studying a Josephson junction in a strong magnetic field. The vacuum polarization results in a weak dependence of the Josephson constant on the magnetic field strength which is within the reach of the existing experimental techniques.

  5. JUNCTION TREE ALGORITHM Tuesday, September 9, 2008

    E-Print Network [OSTI]

    Cevher, Volkan

    graph G = (NG, EG) to an undi- rected graph G = (NG, EG) plays an important role in the junction tree. More formally, the transformation from G to G requires the addition (to EG) of two sets, EGG and EGG). They are properly defined EGG := (Xi, Xj) N2 : Xk N : (Xi, Xk) EG and (Xj, Xk) EG EGG := (Xj, Xk) N2 : (Xj, Xk

  6. p-n Junction Heterostructure Device Physics Model of a Four Junction Melissa J. Griggs*, Brendan M. Kayes, and Harry A. Atwater

    E-Print Network [OSTI]

    Atwater, Harry

    portion of the solar spectrum more effectively (see Fig. 1). High efficiency triple junction solar cellsp-n Junction Heterostructure Device Physics Model of a Four Junction Solar Cell Melissa J. Griggs-n junction device physics model for GaInP/GaAs/GaInAsP/GaInAs four junction solar cells. The model employs

  7. Vibrational Heat Transport in Molecular Junctions

    E-Print Network [OSTI]

    Segal, Dvira

    2015-01-01

    We review studies of vibrational energy transfer in a molecular junction geometry, consisting of a molecule bridging two heat reservoirs, solids or large chemical compounds. This setup is of interest for applications in molecular electronics, thermoelectrics, and nanophononics, and for addressing basic questions in the theory of classical and quantum transport. Calculations show that system size, disorder, structure, dimensionality, internal anharmonicities, contact interaction, and quantum coherent effects, are factors that interplay to determine the predominant mechanism (ballistic/diffusive), effectiveness (poor/good) and functionality (linear/nonlinear) of thermal conduction at the nanoscale. We review recent experiments and relevant calculations of quantum heat transfer in molecular junctions. We recount the Landauer approach, appropriate for the study of elastic (harmonic) phononic transport, and outline techniques which incorporate molecular anharmonicities. Theoretical methods are described along with...

  8. Junction conditions in extended Teleparallel gravities

    SciTech Connect (OSTI)

    De la Cruz-Dombriz, Álvaro; Dunsby, Peter K.S.; Sáez-Gómez, Diego E-mail: peter.dunsby@uct.ac.za

    2014-12-01

    In the context of extended Teleparallel gravity theories, we address the issue of junction conditions required to guarantee the correct matching of different regions of spacetime. In the absence of shells/branes, these conditions turn out to be more restrictive than their counterparts in General Relativity as in other extended theories of gravity. In fact, the general junction conditions on the matching hypersurfaces depend on the underlying theory and a new condition on the induced tetrads in order to avoid delta-like distributions in the field equations. This result imposes strict consequences on the viability of standard solutions such as the Einstein-Straus-like construction. We find that the continuity of the scalar torsion is required in order to recover the usual General Relativity results.

  9. Non-Lagrangian Theories from Brane Junctions

    E-Print Network [OSTI]

    Ling Bao; Vladimir Mitev; Elli Pomoni; Masato Taki; Futoshi Yagi

    2013-11-08

    In this article we use 5-brane junctions to study the 5D T_N SCFTs corresponding to the 5D N=1 uplift of the 4D N=2 strongly coupled gauge theories, which are obtained by compactifying N M5 branes on a sphere with three full punctures. Even though these theories have no Lagrangian description, by using the 5-brane junctions proposed by Benini, Benvenuti and Tachikawa, we are able to derive their Seiberg-Witten curves and Nekrasov partition functions. We cross-check our results with the 5D superconformal index proposed by Kim, Kim and Lee. Through the AGTW correspondence, we discuss the relations between 5D superconformal indices and n-point functions of the q-deformed W_N Toda theories.

  10. Semiconductor junction formation by directed heat

    DOE Patents [OSTI]

    Campbell, Robert B. (Pittsburgh, PA)

    1988-03-24

    The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.

  11. Highly Charged Ion (HCI) Modified Tunnel Junctions

    SciTech Connect (OSTI)

    Pomeroy, J. M.; Grube, H. [Atomic Physics Division, National Institute of Standards and Technology (NIST) 100 Bureau Dr., MS 8423, Gaithersburg, MD 20899-8423 (United States)

    2009-03-10

    The neutralization energy carried by highly charged ions (HCIs) provides an alternative method for localizing energy on a target's surface, producing features and modifying surfaces with fluences and kinetic energy damage that are negligible compared to singly ionized atoms. Since each HCI can deposit an enormous amount of energy into a small volume of the surface (e.g., Xe{sup 44+} delivers 51 keV of neutralization energy per HCI), each individual HCI's interaction with the target can produce a nanoscale feature. Many studies of HCI-surface features have characterized some basic principles of this unique ion-surface interaction, but the activity reported here has been focused on studying ensembles of HCI features in ultra-thin insulating films by fabricating multi-layer tunnel junction devices. The ultra-thin insulating barriers allow current to flow by tunneling, providing a very sensitive means of detecting changes in the barrier due to highly charged ion irradiation and, conversely, HCI modification provides a method of finely tuning the transparency of the tunnel junctions that spans several orders of magnitude for devices produced from a single process recipe. Systematic variation of junction bias, temperature, magnetic field and other parameters provides determination of the transport mechanism, defect densities, and magnetic properties of these nano-features and this novel approach to device fabrication.

  12. Workshop on Transients C.M. Greenfield

    E-Print Network [OSTI]

    tokamak plasmas with the characteristics desired for a fusion power plant can be robustly produced Virtual workshop to gather community input Community (submits 2-page white papers and give short

  13. QER- Comment of Solar Store of Greenfield

    Broader source: Energy.gov [DOE]

    I speak for many millions of Americans who are ready and able to more the USA towards that goal of 100% renewables by 2050. WE are ready to START TODAY. And in fact we have started already. Thank you for your time and consideration. Claire Chang

  14. The University of Chicago Jessica Greenfield

    E-Print Network [OSTI]

    · Operates in a competitive environment · Provides goods and services that are ancillary to the performance;CONSULTANT · Consultant ­ ancillary to project; independent expertise · Generally individual, but may

  15. Greenfield, Massachusetts: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages

  16. Single P-N junction tandem photovoltaic device

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw (Kensington, CA); Ager, III, Joel W. (Berkeley, CA); Yu, Kin Man (Lafayette, CA)

    2011-10-18

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  17. Single P-N junction tandem photovoltaic device

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw (Kensington, CA); Ager, III, Joel W. (Berkeley, CA); Yu, Kin Man (Lafayette, CA)

    2012-03-06

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  18. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    DOE Patents [OSTI]

    Chang, Y. Austin (Middleton, WI); Yang, Jianhua Joshua (Madison, WI)

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  19. Spin Torques in Magnetic and Superconducting Tunnel Junctions

    E-Print Network [OSTI]

    Hoffman, Silas Eli

    2012-01-01

    Tunnel Junctions for Spintronic Memories and Beyond. ” IEEEto their application in spintronic devices. Injecting a spinforecasts a new kind of spintronic device that manipulates

  20. Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin

    Office of Scientific and Technical Information (OSTI)

    Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin Temperatures Borzenets, I. V.; Coskun, U. C.; Mebrahtu, H. T.; Bomze, Yu. V.; Smirnov, A. I.; Finkelstein, G....

  1. Limiting and realistic efficiencies of multi-junction solar Photonic Materials Group, FOM institute AMOLF, Amsterdam

    E-Print Network [OSTI]

    Polman, Albert

    Limiting and realistic efficiencies of multi-junction solar cells Photonic Materials Group, FOM of multi-junction solar cells, varying the number of subcells, the concentration of solar light . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.4 Multi-junction Solar cells

  2. Phonon interference effects in molecular junctions

    SciTech Connect (OSTI)

    Markussen, Troels

    2013-12-28

    We study coherent phonon transport through organic, ?-conjugated molecules. Using first principles calculations and Green's function methods, we find that the phonon transmission function in cross-conjugated molecules, like meta-connected benzene, exhibits destructive quantum interference features very analogous to those observed theoretically and experimentally for electron transport in similar molecules. The destructive interference features observed in four different cross-conjugated molecules significantly reduce the thermal conductance with respect to linear conjugated analogues. Such control of the thermal conductance by chemical modifications could be important for thermoelectric applications of molecular junctions.

  3. On-Chip Josephson Junction Microwave Switch

    E-Print Network [OSTI]

    O. Naaman; M. O. Abutaleb; C. Kirby; M. Rennie

    2015-12-04

    The authors report on the design and measurement of a reflective single-pole single-throw microwave switch with no internal power dissipation, based on a superconducting circuit containing a single Josephson junction. The data demonstrate the switch operation with 2 GHz instantaneous bandwidth centered at 10 GHz, low insertion loss, and better than 20 dB on/off ratio. The switch's measured performance agrees well with simulations for input powers up to -100 dBm. An extension of the demonstrated circuit to implement a single-pole double-throw switch is shown in simulation.

  4. Junction adhesion molecule expression influences hematopoietic and endothelial commitment of murine embryonic stem cells

    E-Print Network [OSTI]

    Stankovich, Basha Lorraine

    2009-01-01

    OF CALIFORNIA, MERCED Junction Adhesion Molecule Expressionstem cells. Junction adhesion molecules influence cell fateBirchmeier W. Balancing cell adhesion and Wnt signaling, the

  5. Josephson junctions in high-T/sub c/ superconductors

    DOE Patents [OSTI]

    Falco, C.M.; Lee, T.W.

    1981-01-14

    The invention includes a high T/sub c/ Josephson sperconducting junction as well as the method and apparatus which provides the junction by application of a closely controlled and monitored electrical discharge to a microbridge region connecting two portions of a superconducting film.

  6. Grundy County, Illinois: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,Solar JumpInformationGrowind Jump to: navigation,

  7. Grundy County, Iowa: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,Solar JumpInformationGrowind Jump to: navigation,Iowa:

  8. Grundy County, Missouri: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,Solar JumpInformationGrowind Jump to:

  9. Grundy County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,Solar JumpInformationGrowind Jump to:Tennessee: Energy

  10. Grundy Center Mun Light & Power | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:ofEniaElectricHydroLegal DocumentsGrotonGrowdiesel Jump

  11. Grundy County Rural Elec Coop | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:ofEniaElectricHydroLegal DocumentsGrotonGrowdiesel

  12. Grundy Electric Coop, Inc (Iowa) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New PagesInformationEnergyInformationIowa) Jump to:

  13. Mechanical deformations of boron nitride nanotubes in crossed junctions

    SciTech Connect (OSTI)

    Zhao, Yadong; Chen, Xiaoming; Ke, Changhong; Park, Cheol; Fay, Catharine C.; Stupkiewicz, Stanislaw

    2014-04-28

    We present a study of the mechanical deformations of boron nitride nanotubes (BNNTs) in crossed junctions. The structure and deformation of the crossed tubes in the junction are characterized by using atomic force microscopy. Our results show that the total tube heights are reduced by 20%–33% at the crossed junctions formed by double-walled BNNTs with outer diameters in the range of 2.21–4.67?nm. The measured tube height reduction is found to be in a nearly linear relationship with the summation of the outer diameters of the two tubes forming the junction. The contact force between the two tubes in the junction is estimated based on contact mechanics theories and found to be within the range of 4.2–7.6 nN. The Young's modulus of BNNTs and their binding strengths with the substrate are quantified, based on the deformation profile of the upper tube in the junction, and are found to be 1.07?±?0.11 TPa and 0.18–0.29 nJ/m, respectively. Finally, we perform finite element simulations on the mechanical deformations of the crossed BNNT junctions. The numerical simulation results are consistent with both the experimental measurements and the analytical analysis. The results reported in this paper contribute to a better understanding of the structural and mechanical properties of BNNTs and to the pursuit of their applications.

  14. Effect of current injection into thin-film Josephson junctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to ?=2?2/d;? is the bulk London penetration depth of the film material and d is the film thickness.

  15. Profiling the Thermoelectric Power of Semiconductor Junctions with

    E-Print Network [OSTI]

    components or hazardous working fluids. Developing new thermoelectric mate- rials with high figures of merit S is governed by local carrier statistics, SThEM allows us to profile precise elec- tronic junction locations

  16. Epithelial cell polarity and cell junctions in drosophila

    E-Print Network [OSTI]

    Tepass, Ulrich; Tanentzapf­ , Guy; Ward, Robert; Fehon, Richard G.

    2001-12-01

    to the most detailed understanding of these processes in a whole animal model system to date. Asymmetry of the plasma membrane and the differentiation of membrane domains and cellular junctions are controlled by protein complexes that assemble around...

  17. Anomalous supercurrent from Majorana states in topological insulator Josephson junctions

    E-Print Network [OSTI]

    Potter, Andrew C.

    We propose a Josephson junction setup based on a topological insulator (TI) thin film to detect Majorana states that exploits the unique helical and extended nature of the TI surface state. When the magnetic flux through ...

  18. Electron transport in normal-metal/superconductor junctions 

    E-Print Network [OSTI]

    Yan, XZ; Zhao, HW; Hu, Chia-Ren.

    2000-01-01

    On the basis of the Keldysh method of nonequilibrium systems, we develop a theory of electron tunneling in normal-metal-superconductor junctions. By using the tunneling Hamiltonian model (being appropriate for the tight-binding systems...

  19. Power dissipation in a single molecule junction: Tracking energy levels

    E-Print Network [OSTI]

    Yaghoob Naimi; Javad Vahedi

    2014-12-05

    Motivated by recent work [Lee et al. Nature {\\bf 489}, 209 (2013)], on asymmetry features of heat dissipation in the electrodes of molecular junctions, we put forward an idea as a result of heat dissipation in the electrodes. Based on tight-binding model and a generalized Green's function formalism, we describe the conditions under which heat dissipation shows symmetry characteristic and does not depend on the bias polarity. We also show the power dissipated in the junction can be used to detect which energy levels of molecule junction play more or less role in the transmission process. We present this idea by studying a simple toy model and Au-$C_{60}$-Au junction.

  20. EA-1037: Uranium Lease Management Program, Grand Junction, Colorado

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of the U.S. Department of Energy's Grand Junction Projects Office's proposal to maintain and preserve the nation's immediately accessible supply of...

  1. Phase diagram of Josephson junction between

    Office of Scientific and Technical Information (OSTI)

    diagram of Josephson junction betweensandssuperconductors in the dirty limit...

  2. Corrigendum Corrigendum to "Gap junction-mediated electrical transmission

    E-Print Network [OSTI]

    Rash, John E.

    Corrigendum Corrigendum to "Gap junction-mediated electrical transmission: Regulatory mechanisms, show variability in the electrical conductance of the synaptic transmission, even though the pre chemical component. Thus, electrical synapses from neighboring club endings coexist at different degrees

  3. Metal-Semiconductor junctions tlu@math.pku.edu.cn

    E-Print Network [OSTI]

    Lu, Tiao

    of Ec and Ev and also changes EFi n=ni e -q F - kT , p=ni e q F- kT n-p 2ni = e -F1 Metal-Semiconductor junctions tlu@math.pku.edu.cn homepage: dsec.pku.edu.cn/~tlu blog: http://hi.baidu.com/motioo #12;2 - Many of the properties of pn junctions can be realized by forming an appropriate metal

  4. EA-1338: Transfer of the Department of Energy Grand Junction Office to Non-DOE Ownership, Grand Junction, Colorado

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposed transfer of real and personal property at the U.S. Department of Energy's Grand Junction Office to non-DOE ownership.

  5. Measure Guideline: Optimizing the Configuration of Flexible Duct Junction Boxes

    SciTech Connect (OSTI)

    Beach, R.; Burdick, A.

    2014-03-01

    This measure guideline offers additional recommendations to heating, ventilation, and air conditioning (HVAC) system designers for optimizing flexible duct, constant-volume HVAC systems using junction boxes within Air Conditioning Contractors of America (ACCA) Manual D guidance (Rutkowski, H. Manual D -- Residential Duct Systems, 3rd edition, Version 1.00. Arlington, VA: Air Conditioning Contractors of America, 2009.). IBACOS used computational fluid dynamics software to explore and develop guidance to better control the airflow effects of factors that may impact pressure losses within junction boxes among various design configurations (Beach, R., Prahl, D., and Lange, R. CFD Analysis of Flexible Duct Junction Box Design. Golden, CO: National Renewable Energy Laboratory, submitted for publication 2013). These recommendations can help to ensure that a system aligns more closely with the design and the occupants' comfort expectations. Specifically, the recommendations described herein show how to configure a rectangular box with four outlets, a triangular box with three outlets, metal wyes with two outlets, and multiple configurations for more than four outlets. Designers of HVAC systems, contractors who are fabricating junction boxes on site, and anyone using the ACCA Manual D process for sizing duct runs will find this measure guideline invaluable for more accurately minimizing pressure losses when using junction boxes with flexible ducts.

  6. Superpoissonian shot noise in organic magnetic tunnel junctions

    SciTech Connect (OSTI)

    Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G.; Hong, Jhen-Yong; Lin, Minn-Tsong; Szczepa?ski, Tomasz; Dugaev, Vitalii K.; Barna?, Józef

    2014-12-08

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

  7. Junction-based field emission structure for field emission display

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); Balooch, Mehdi (Berkeley, CA); McLean, II, William (Oakland, CA); Schildbach, Marcus A. (Livermore, CA)

    2002-01-01

    A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.

  8. Single Molecule Junctions: Probing Contact Chemistry and Fundamental Circuit Laws

    SciTech Connect (OSTI)

    Hybertsen M. S.

    2013-04-11

    By exploiting selective link chemistry, formation of single molecule junctions with reproducible conductance has become established. Systematic studies reveal the structure-conductance relationships for diverse molecules. I will draw on experiments from my collaborators at Columbia University, atomic-scale calculations and theory to describe progress in two areas. First, I will describe a novel route to form single molecule junctions, based on SnMe3 terminated molecules, in which gold directly bonds to carbon in the molecule backbone resulting in near ideal contact resistance [1]. Second, comparison of the conductance of junctions formed with molecular species containing either one backbone or two backbones in parallel allows demonstration of the role of quantum interference in the conductance superposition law at the molecular scale [2].

  9. Environmental Audit of the Grand Junction Projects Office

    SciTech Connect (OSTI)

    Not Available

    1991-08-01

    The Grand Junction Projects Office (GJPO) is located in Mesa County, Colorado, immediately south and west of the Grand Junction city limits. The US Atomic Energy Commission (AEC) established the Colorado Raw Materials Office at the present-day Grand Junction Projects Office in 1947, to aid in the development of a viable domestic uranium industry. Activities at the site included sampling uranium concentrate; pilot-plant milling research, including testing and processing of uranium ores; and operation of a uranium mill pilot plant from 1954 to 1958. The last shipment of uranium concentrate was sent from GJPO in January, 1975. Since that time the site has been utilized to support various DOE programs, such as the former National Uranium Resource Evaluation (NURE) Program, the Uranium Mill Tailings Remedial Action Project (UMTRAP), the Surplus Facilities Management Program (SFMP), and the Technical Measurements Center (TMC). All known contamination at GJPO is believed to be the result of the past uranium milling, analyses, and storage activities. Hazards associated with the wastes impounded at GJPO include surface and ground-water contamination and potential radon and gamma-radiation exposure. This report documents the results of the Baseline Environmental Audit conducted at Grand Junction Projects Office (GJPO) located in Grand Junction, Colorado. The Grand Junction Baseline Environmental Audit was conducted from May 28 to June 12, 1991, by the Office of Environmental Audit (EH-24). This Audit evaluated environmental programs and activities at GJPO, as well as GJPO activities at the State-Owned Temporary Repository. 4 figs., 12 tabs.

  10. Regulation of specific connexins differentially alters gap junction permeability and endothelial cell function

    E-Print Network [OSTI]

    Elihu, David Morad

    2006-01-01

    While many have explored how vascular processes alter gap junction communication and composition few have analyzed the role of specific gap junction connexin proteins in regulating cellular communication and wound healing. ...

  11. Estimating commuter rail demand to Kendall Square along the Grand Junction Corridor

    E-Print Network [OSTI]

    Bockelie, Adam

    2012-01-01

    Since acquiring the Grand Junction Railroad in June 2010 from CSX, the Massachusetts Bay Transit Authority (MBTA) has explored the possibility of using the line for commuter rail service. In addition the Grand Junction ...

  12. Computer-assisted data acquisition on Josephson junctions

    SciTech Connect (OSTI)

    Pagano, S. ); Costabile, G.; Fedullo, V.

    1989-09-01

    An automatic digital data-acquisition system for the test and characterization of superconducting Josephson tunnel junctions is presented. The key feature is represented by the high degree of interaction of the measurement system with the device under test. This is accomplished by an iterated sequence of data acquisitions, automatic analysis, and subsequent modifications of the control signals in the device. In this way, the basic calibration and the value of the relevant quantities involved with the Josephson junction are automatically determined. A connection with a host computer makes possible more complex data analysis, while the full control of the experiment by a dedicated computer allows the operator to perform nonroutine procedures.

  13. TM-mode coupling to a Josephson junction S. J. Lewandowski

    E-Print Network [OSTI]

    Boyer, Edmond

    of the junction electrodes. to the j unction was provided by two leads immersed in superconducting solder, which

  14. Optimized Triple-Junction Solar Cells Using Inverted Metamorphic Approach (Presentation)

    SciTech Connect (OSTI)

    Geisz, J. F.

    2008-11-01

    Record efficiencies with triple-junction inverted metamorphic designs, modeling useful to optimize, and consider operating conditions before choosing design.

  15. OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng

    E-Print Network [OSTI]

    Deng, Xunming

    OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR CELLS Xunming Deng Department, tandem and triple-junction a-SiGe based solar cells and materials [6-19]. Much of the research is also light and bias voltage for the measurement of multiple-junction cells. Materials characterization using

  16. Design of photonic metamaterial multi-junction solar cells using rigorous coupled wave analysis

    E-Print Network [OSTI]

    Lansey, Eli

    Design of photonic metamaterial multi-junction solar cells using rigorous coupled wave analysis Eli a horizontally-oriented multi-junction solar cell by creating an array of cavities tuned with targeted CMs of New York, New York, NY, USA 10031 August 26, 2010 ABSTRACT We have developed a method to design multi-junction

  17. PHYSICAL REVIEW B 84, 195428 (2011) Semiclassical magnetotransport in graphene n-p junctions

    E-Print Network [OSTI]

    Ullmo, Denis

    2011-01-01

    PHYSICAL REVIEW B 84, 195428 (2011) Semiclassical magnetotransport in graphene n- p junctions n-p junctions in the quantum Hall regime. This framework is known to experimentally exhibit, creating a n-p junction at the regions' interface, an ideal setup to study Klein tunneling. Using a strong

  18. Development status of triple-junction solar cells optimized for low intensity low temperature applications

    E-Print Network [OSTI]

    Development status of triple-junction solar cells optimized for low intensity low temperature triple-junction solar cells manufactured by AZUR SPACE Solar Power GmbH under low intensity low unusable for deep space missions. Fig. 1: Example of a flat spot effect present in a triple- junction solar

  19. DESIGN APPROACHES AND MATERIALS PROCESSES FOR ULTRAHIGH EFFICIENCY LATTICE MISMATCHED MULTI-JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    of the minority carrier lifetime. INTRODUCTION High efficiency triple junction solar cells have recently been heterostructures grown in a multi-junction solar cell-like structure by MOCVD. Initial solar cell data are also of the materials used in multi-junction solar cells must be optimized to efficiently absorb as much of the solar

  20. LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS

    E-Print Network [OSTI]

    LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS F. Haase losses in back-contact back- junction monocrystalline thin-film silicon solar cells. The cells are made for back-contact back- junction (BC BJ) monocrystalline thin-film silicon solar cells using the PSI process

    1. Nanowire-Based Molecular Monolayer Junctions: Synthesis, Assembly, and Electrical Characterization

      E-Print Network [OSTI]

      (phenylene vinylene) (OPV) were prepared by replicating the pores of sub-40 nm diameter polycarbonate track etched that the conductance of junctions formed with -conjugated oligomers are several orders of magnitude larger than the saturated alkanes, with the OPV junctions having the highest conductance. The molecular wire junction

    2. Mechanical tugging force regulates the size of cellcell junctions

      E-Print Network [OSTI]

      Chen, Christopher S.

      Mechanical tugging force regulates the size of cell­cell junctions Zhijun Liua,1 , John L. Tanb,1 through the generation of mechanical forces at sites of cell­matrix and cell­cell contact. While increased mechanical load- ing at cell­matrix adhesions results in focal adhesion growth, whether forces drive changes

    3. ALTERNATIVE MATERIALS FOR RAMP-EDGE SNS JUNCTIONS

      SciTech Connect (OSTI)

      Jia, Q.; Fan, Y.

      1999-06-01

      We report on the processing optimization and fabrication of ramp-edge high-temperature superconducting junctions by using alternative materials for both superconductor electrodes and normal-metal barrier. By using Ag-doped YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (Ag:YBCO) as electrodes and a cation-modified compound of (Pr{sub y}Gd{sub 0.6{minus}y})Ca{sub 0.4}Ba{sub 1.6}La{sub 0.4}Cu{sub 3}O{sub 7} (y = 0.4, 0.5, and 0.6) as a normal-metal barrier, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. By using Ag:YBCO as electrodes, we have found that the processing controllability /reproducibility and the stability of the SNS junctions are improved substantially. The junctions fabricated with these alternative materials show well-defined RSJ-like current vs voltage characteristics at liquid nitrogen temperature.

    4. Back-contacted back-junction silicon solar cells

      E-Print Network [OSTI]

      Johansen, Tom Henning

      electricity from BC-BJ silicon solar cells cost-competitive with electBack-contacted back-junction silicon solar cells Krister Mangersnes THESIS submitted in partial nearly four years as a Ph.D. student at the Institute for Energy Technology (IFE), Department of Solar

    5. Performance model assessment for multi-junction concentrating photovoltaic systems.

      SciTech Connect (OSTI)

      Riley, Daniel M.; McConnell, Robert.; Sahm, Aaron; Crawford, Clark; King, David L.; Cameron, Christopher P.; Foresi, James S.

      2010-03-01

      Four approaches to modeling multi-junction concentrating photovoltaic system performance are assessed by comparing modeled performance to measured performance. Measured weather, irradiance, and system performance data were collected on two systems over a one month period. Residual analysis is used to assess the models and to identify opportunities for model improvement.

    6. PARAMETRIC EXCITATION OF PLASMA OSCILLATIONS IN JOSEPHSON JUNCTIONS

      E-Print Network [OSTI]

      Boyer, Edmond

      b. ' FIG. 3. - (a) 03B1c tan çoo vs. 2/Q at co = 2 cop. Straight line : theory. Circles : analog harmonic generation with big amplitude may be understood from a discussion of the stability properties frequency FIG. 1. - The junction model. For the analog R = 500 il, Io = 1 mA, C = 100 nF, and k = « 2 e

    7. Gap junction-mediated electrical transmission: Regulatory mechanisms and plasticity

      E-Print Network [OSTI]

      Rash, John E.

      Gap junction-mediated electrical transmission: Regulatory mechanisms and plasticity Alberto E of synaptic transmission: chemical and electrical. While most efforts have been dedicated to the understanding in revised form 16 May 2012 Accepted 23 May 2012 Available online 31 May 2012 Keywords: Electrical synapse

    8. Photo-Thermoelectric Effect at a Graphene Interface Junction

      E-Print Network [OSTI]

      McEuen, Paul L.

      Photo-Thermoelectric Effect at a Graphene Interface Junction Xiaodong Xu, Nathaniel M. Gabor increase at the cryogenic temperature as compared to room temperature. Assuming the thermoelectric power predictions. KEYWORDS Graphene, photocurrent, photo-thermoelectric effect D evices that convert photons

    9. Atomically wired molecular junctions: Connecting a single organic molecule by chains of metal atoms

      E-Print Network [OSTI]

      Yelin, Tamar; Kuritz, Natalia; Korytár, Richard; Bagrets, Alexei; Evers, Ferdinand; Kronik, Leeor; Tal, Oren

      2015-01-01

      Using a break junction technique, we find a clear signature for the formation of conducting hybrid junctions composed of a single organic molecule (benzene, naphthalene or anthracene) connected to chains of platinum atoms. The hybrid junctions exhibit metallic-like conductance (~0.1-1G0), which is rather insensitive to further elongation by additional atoms. At low bias voltage the hybrid junctions can be elongated significantly beyond the length of the bare atomic chains. Ab initio calculations reveal that benzene based hybrid junctions have a significant binding energy and high structural flexibility that may contribute to the survival of the hybrid junction during the elongation process. The fabrication of hybrid junctions opens the way for combining the different properties of atomic chains and organic molecules to realize a new class of atomic scale interfaces.

    10. Topological p-n junctions in helical edge states

      E-Print Network [OSTI]

      Disha Wadhawan; Poonam Mehta; Sourin Das

      2015-10-08

      Quantum spin Hall effect is endowed with topologically protected edge modes with gapless Dirac spectrum. Applying a magnetic field locally along the edge leads to a gapped edge spectrum with opposite parity for winding of spin texture for conduction and valence band. Using Pancharatnam's prescription for geometric phase it is shown that mismatch of this parity across a $p$-$n$ junction, which could be engineered into the edge by electrical gate induced doping, leads to a phase dependence in the two-terminal conductance which is purely topological (0 or $\\pi$). This fact results in a ${\\mathbb{Z}}_2$ classification of such junctions with an associated duality. Current asymmetry measurements which are shown to be robust against electron-electron interactions are proposed to infer this topology.

    11. Origin of subgap current in an SIS junction

      SciTech Connect (OSTI)

      Suzuki, Toyoaki; Noguchi, Takashi; Matsuo, Hiroshi [National Institutes of Natural Sciences/National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo, 181-8588 (Japan)

      2009-12-16

      According to the BCS theory, the subgap current in an SIS junction is reduced exponentially as the temperature decreases. However, experimentally, the reduction is saturated below a certain temperature. This phenomenon was a bottleneck in the development of sensitive SIS photon detectors with NEP of 10{sup -19} W/{radical}(Hz) at 650 GHz, because the NEP is limited by the shot noise in the subgap current. To investigate the origin of the residual subgap current under various temperatures we have measured I-V curves of a Nb/Al-AlN/Nb junction. Obtained I-V curves have been reproduced by a model: single-and two-particle tunneling under reduced quasiparticle lifetime. Our result suggests that increasing the lifetime is essential to reduce the subgap current. One of possible methods to increase the lifetime is to form an epitaxial Nb film.

    12. Towards understanding junction degradation in cadmium telluride solar cells

      SciTech Connect (OSTI)

      Nardone, Marco

      2014-06-21

      A degradation mechanism in cadmium telluride (CdTe/CdS) solar cells is investigated using time-dependent numerical modeling to simulate various temperature, bias, and illumination stress conditions. The physical mechanism is based on defect generation rates that are proportional to nonequilibrium charge carrier concentrations. It is found that a commonly observed degradation mode for CdTe/CdS solar cells can be reproduced only if defects are allowed to form in a narrow region of the absorber layer close to the CdTe/CdS junction. A key aspect of this junction degradation is that both mid-gap donor and shallow acceptor-type defects must be generated simultaneously in response to photo-excitation or applied bias. The numerical approach employed here can be extended to study other mechanisms for any photovoltaic technology.

    13. Strain designed Josephson $?$ junction qubits with topological insulators

      E-Print Network [OSTI]

      Colin Benjamin

      2015-06-23

      A Josephson qubit is designed via the application of a tensile strain to a topological insulator surface sandwiched between two s-wave superconductors. The strain applied leads to a shift in the Dirac point without changing the pre-existing conducting states, on the surface of a topological insulator. Strain applied can be tuned to form a $\\pi$ junction in such a structure. Combining two such junctions in a ring architecture leads to the ground state of the ring being in doubly degenerate state- the "0" and "1" states of a qubit. A qubit designed this way is quite easily controlled via the tunable strain applied. We report on the conditions necessary to design such a qubit. Finally the operating time of a single qubit phase gate is derived.

    14. Grain boundary and triple junction diffusion in nanocrystalline copper

      SciTech Connect (OSTI)

      Wegner, M. Leuthold, J.; Peterlechner, M.; Divinski, S. V.; Song, X.; Wilde, G.

      2014-09-07

      Grain boundary and triple junction diffusion in nanocrystalline Cu samples with grain sizes, ?d?, of ?35 and ?44?nm produced by spark plasma sintering were investigated by the radiotracer method using the {sup 63}Ni isotope. The measured diffusivities, D{sub eff}, are comparable with those determined previously for Ni grain boundary diffusion in well-annealed, high purity, coarse grained, polycrystalline copper, substantiating the absence of a grain size effect on the kinetic properties of grain boundaries in a nanocrystalline material at grain sizes d???35?nm. Simultaneously, the analysis predicts that if triple junction diffusion of Ni in Cu is enhanced with respect to the corresponding grain boundary diffusion rate, it is still less than 500?D{sub gb} within the temperature interval from 420?K to 470?K.

    15. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

      SciTech Connect (OSTI)

      Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

      2011-01-01

      We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

    16. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

      SciTech Connect (OSTI)

      Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

      2011-07-01

      We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

    17. Joint measurement of current-phase relations and transport properties of hybrid junctions using a three junctions superconducting quantum interference device

      SciTech Connect (OSTI)

      Basset, J.; Delagrange, R.; Weil, R.; Kasumov, A.; Bouchiat, H.; Deblock, R.

      2014-07-14

      We propose a scheme to measure both the current-phase relation and differential conductance dI/dV of a superconducting junction, in the normal and the superconducting states. This is done using a dc Superconducting Quantum Interference Device with two Josephson junctions in parallel with the device under investigation and three contacts. As a demonstration, we measure the current-phase relation and dI/dV of a small Josephson junction and a carbon nanotube junction. In this latter case, in a regime where the nanotube is well conducting, we show that the non-sinusoidal current phase relation we find is consistent with the theory for a weak link, using the transmission extracted from the differential conductance in the normal state. This method holds great promise for future investigations of the current-phase relation of more exotic junctions.

    18. Environmental assessment of facility operations at the U.S. Department of Energy Grand Junction Projects Office, Grand Junction, Colorado

      SciTech Connect (OSTI)

      1996-06-01

      The US Department of Energy (DOE) has prepared a sitewide environmental assessment (EA) of the proposed action to continue and expand present-day activities on the DOE Grand Junction Projects Office (GJPO) facility in Grand Junction, Colorado. Because DOE-GJPO regularly proposes and conducts many different on-site activities, DOE decided to evaluate these activities in one sitewide EA rather than in multiple, activity-specific documents. On the basis of the information and analyses presented in the EA, DOE has determined that the proposed action does not constitute a major Federal action significantly affecting the quality of the human environment, as defined by the National Environmental Policy Act (NEPA) of 1969. Therefore, preparation of an environmental impact statement is not required for facility operations, and DOE is issuing this Finding of No Significant Impact (FONSI).

    19. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

      DOE Patents [OSTI]

      Toet, Daniel; Sigmon, Thomas W.

      2004-12-07

      A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

    20. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

      DOE Patents [OSTI]

      Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

      2003-01-01

      A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

    1. Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

      DOE Patents [OSTI]

      Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

      2005-08-23

      A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

    2. GaInNAs Junctions for Next-Generation Concentrators: Progress and Prospects

      SciTech Connect (OSTI)

      Friedman, D. J.; Ptak, A. J.; Kurtz, S. R.; Geisz, J. F.; Kiehl, J.

      2005-08-01

      We discuss progress in the development of GaInNAs junctions for application in next-generation multijunction concentrator cells. A significant development is the demonstration of near-100% internal quantum efficiencies in junctions grown by molecular-beam epitaxy. Testing at high currents validates the compatibility of these devices with concentrator operation. The efficiencies of several next-generation multijunction structures incorporating these state-of-the-art GaInNAs junctions are projected.

    3. Comment on "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"

      E-Print Network [OSTI]

      Scully, Marlan O

      2010-01-01

      This is a comment on PRL paper by A.P. Kirk "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"

    4. Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions R. M. Feenstra*

      E-Print Network [OSTI]

      Feenstra, Randall

      -insulator-graphene (GIG) tunnel junctions. * feenstra@cmu.edu djena@nd.edu ggu1@utk.edu Published in J. Appl. Phys. 111

    5. SU-E-T-426: Dose Delivery Accuracy in Breast Field Junction for...

      Office of Scientific and Technical Information (OSTI)

      distribution along the field junction in a half beam irradiation technique for breast cancer patients receiving radiation to the breast or chest wall (CW) and the supraclavicular...

    6. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

      E-Print Network [OSTI]

      Fong, David Michael

      2012-01-01

      Application in High Efficiency Multi-Junction Solar Cells AApplication in High Efficiency Multi-Junction Solar Cells Bycost of high efficiency multi-junction solar cells through a

    7. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

      E-Print Network [OSTI]

      Fong, David Michael

      2012-01-01

      Efficiency Multi-Junction Solar Cells A thesis submitted inHigh Efficiency Multi-Junction Solar Cells By David Michaelsubstrate costs of multi-junction solar cells by recycling

    8. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

      E-Print Network [OSTI]

      Fong, David Michael

      2012-01-01

      technique for LM triple junction solar cell grown on porousAnother common triple-junction solar cell utilizes a GaAstechnique for LM triple junction solar cell grown on porous

    9. Dynamics of Josephson junction systems in the computational subspace

      E-Print Network [OSTI]

      Wang Xiang-Bin; Matsumoto Keiji; Fan Heng; Y. Nakamura

      2001-12-05

      The quantum dynamics of the Josephson junction system in the computational subspace is investigated. A scheme for the controlled not operation is given for two capasitively coupled SQUIDs. In this system, there is no systematic error for the two qubit operation. For the inductively coupled SQUIDs, the effective Hamiltonian causes systematic errors in the computational subspace for the two qubit operation. Using the purterbation theory, we construct a more precise effective Hamiltonian. This new effective Hamiltonian reduces the systematic error to the level much lower than the threshold of the fault resilent quantum computation.

    10. Essex Junction, Vermont: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH JumpEllenville,Power Corp Jump to:SIBRErwin,CompanyVirginia:Junction,

    11. Iron Junction, Minnesota: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy ResourcesOrder at 8, 13RenewableIrem Geothermal Power PlantUtah:Junction,

    12. Princeton Junction, New Jersey: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975)Energy Technology JumpWilliam County, Virginia: EnergyJunction,

    13. Pacific Junction, Iowa: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio Program | OpenWisconsin:NewOverPPSEnergyFuel Cell CorpJunction,

    14. Grand Junction, Colorado, Processing Site and Disposal Sites Fact Sheet

      Office of Legacy Management (LM)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the t-) S/,,5 'a C O M P R E H E N S I551Grand Junction,

    15. Apache Junction, Arizona: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowaWisconsin: EnergyYork Jump| Open EnergyNew Jersey:AntiguaAnyangJunction,

    16. In this thesis, our goal was to fabricate Josephson junction that can be stably processed at 300C or higher. With the purpose of integrating Josephson junction fabrication with current semiconductor circuit fabrication

      E-Print Network [OSTI]

      /Hf-HfOx/Nb superconductor tunnel Josephson junctions that can be grown or processed at elevated temperatures. Also elevated

    17. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint

      SciTech Connect (OSTI)

      Geisz, J. F.; Kurtz, S. R.; Wanlass, M. W.; Ward, J. S.; Duda, A.; Friedman, D. J.; Olson, J. M.; McMahon, W. E.; Moriarty, T. E.; Kiehl, J. T.; Romero, M. J.; Norman, A. G.; Jones, K. M.

      2008-05-01

      We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.

    18. ABUNDANCE AND ULTRASTRUCTURAL DIVERSITY OF NEURONAL GAP JUNCTIONS IN THE OFF AND ON SUBLAMINAE OF THE

      E-Print Network [OSTI]

      Rash, John E.

      retina. In the inner plexiform layer (IPL), ultrastructurally-identified gap junctions were reported primarily in the functionally-defined and anatomically-distinct ON sublamina, with few reported in the OFF an- alyze the morphologies and distributions of neuronal gap junctions in the IPL of adult rat

    19. Leakage Current and Dopant Activation Characterization of SDE/Halo CMOS Junctions with

      E-Print Network [OSTI]

      Schroder, Dieter K.

      by trap assisted and band-to-band tunneling. The reduced thermal budget of IRTP allows junction formation is described by high electron and hole recombination-generation in the end-of-range (EOR) damage layer enhanced/cm^) for high sub-junction doping due to band-to- band and trap-assisted tunnehng [1,2,3] compromises

    20. Molecular Rectification in a Metal-Insulator-Metal Junction Based on Self-Assembled Monolayers

      E-Print Network [OSTI]

      Jacobs, Heiko O.

      Molecular Rectification in a Metal-Insulator-Metal Junction Based on Self-Assembled Monolayers Received April 8, 2002 Abstract: An electrical junction formed by mechanical contact between two self-assembled. The hypothesis underlying this design is based on the relative energies of the highest occupied molecular orbital

    1. Low temperature junction growth using hot-wire chemical vapor deposition

      DOE Patents [OSTI]

      Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

      2014-02-04

      A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

    2. Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor quantum dot nanocrystals as light harvesters

      E-Print Network [OSTI]

      Demir, Hilmi Volkan

      Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor- and Nano-systems Programme, Singapore-MIT Alliance, Singapore 117576 Received 22 June 2010; accepted 10 hybridized, radial p-n junction based, nanopillar solar cells with photovoltaic performance enhanced

    3. Holographic model of hybrid and coexisting s-wave and p-wave Josephson junction

      E-Print Network [OSTI]

      Shuai Liu; Yong-Qiang Wang

      2015-10-27

      In this paper the holographic model for hybrid and coexisting s-wave and p-wave Josephson junction is constructed by a triplet charged scalar field coupled with a non-Abelian $SU(2)$ gauge fields in (3+1)-dimensional AdS spacetime. Depending on the value of chemical potential $\\mu$, one can show that there are four types of junctions (s+p-N-s+p, s+p-N-s, s+p-N-p and s-N-p). We show that DC current of all the hybrid and coexisting s-wave and p-wave junctions is proportional to the sine of the phase difference across the junction. In addition, the maximum current and the total condensation decays with the width of junction exponentially, respectively. For s+p-N-s and s-N-p junction, the maximum current decreases with growing temperature. Moreover, we find that the maximum current increases with growing temperature for s+p-N-s+p and s+p-N-p junction, which is in the different manner as the behaviour of s+p-N-s and s-N-p junction.

    4. Novel applications of the Josephson Effect: Ferroelectric Characterisation and Capacitively Shunted Grain Boundary Junctions

      E-Print Network [OSTI]

      McBrien, Philip Francis

      This thesis describes applications of the ac Josephson effect. Firstly, results are presented from bicrystal grain boundary YBa2Cu3O7-d junctions shunted with a YBa2Cu3O7-d/SrTiO3/Au multilayer external capacitor, to make a junction with a...

    5. Physical model of back line-contact front-junction solar cells Andres Cuevas

      E-Print Network [OSTI]

      electron-collector region is made by thermal dif- fusion of phosphorus, and the localized metal contactsPhysical model of back line-contact front-junction solar cells Andres Cuevas Citation: J. Appl-junction solar cells Andres Cuevasa) Research School of Engineering, The Australian National University, Canberra

    6. Junction conditions in General Relativity with spin sources

      E-Print Network [OSTI]

      Alex Giacomini; Ricardo Troncoso; Steven Willison

      2006-05-16

      The junction conditions for General Relativity in the presence of domain walls with intrinsic spin are derived in three and higher dimensions. A stress tensor and a spin current can be defined just by requiring the existence of a well defined volume element instead of an induced metric, so as to allow for generic torsion sources. In general, when the torsion is localized on the domain wall, it is necessary to relax the continuity of the tangential components of the vielbein. In fact it is found that the spin current is proportional to the jump in the vielbein and the stress-energy tensor is proportional to the jump in the spin connection. The consistency of the junction conditions implies a constraint between the direction of flow of energy and the orientation of the spin. As an application, we derive the circularly symmetric solutions for both the rotating string with tension and the spinning dust string in three dimensions. The rotating string with tension generates a rotating truncated cone outside and a flat space-time with inevitable frame dragging inside. In the case of a string made of spinning dust, in opposition to the previous case no frame dragging is present inside, so that in this sense, the dragging effect can be "shielded" by considering spinning instead of rotating sources. Both solutions are consistently lifted as cylinders in the four-dimensional case.

    7. City of Greenfield, Indiana (Utility Company) | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtdEllsworth, IowaGraettinger, Iowa

    8. City of Greenfield, Iowa (Utility Company) | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtdEllsworth, IowaGraettinger, IowaIowa (Utility Company) Jump to:

    9. Josephson junction of non-Abelian superconductors and non-Abelian Josephson vortices

      E-Print Network [OSTI]

      Muneto Nitta

      2015-08-06

      A Josephson junction is made of two superconductors sandwiching an insulator, and a Josephson vortex is a magnetic vortex (flux tube) absorbed into the Josephson junction, whose dynamics can be described by the sine-Gordon equation. In a field theory framework, a flexible Josephson junction was proposed, in which the Josephson junction is represented by a domain wall separating two condensations and a Josephson vortex is a sine-Gordon soliton in the domain wall effective theory. In this paper, we propose a Josephson junction of non-Abelian color superconductors, that is described by a non-Abelian domain wall, and show that a non-Abelian vortex (color magnetic flux tube) absorbed into it is a non-Abelian Josephson vortex represented as a non-Abelian sine-Gordon soliton in the domain wall effective theory, that is the $U(N)$ principal chiral model.

    10. Josephson junction of non-Abelian superconductors and non-Abelian Josephson vortices

      E-Print Network [OSTI]

      Nitta, Muneto

      2015-01-01

      A Josephson junction is made of two superconductors sandwiching an insulator, and a Josephson vortex is a magnetic vortex absorbed into the Josephson junction, whose dynamics can be described by the sine-Gordon equation. In a field theory framework, a flexible Josephson junction was proposed, in which the Josephson junction is represented by a domain wall separating two condensations and a Josephson vortex is a sine-Gordon soliton in the domain wall effective theory. In this paper, we propose a Josephson junction of non-Abelian color superconductors, that is described by a non-Abelian domain wall, and show that a non-Abelian vortex (color magnetic flux tube) absorbed into it is a non-Abelian Josephson vortex represented as a non-Abelian sine-Gordon soliton in the domain wall effective theory.

    11. E-cadherin junction formation involves an active kinetic nucleation process

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng -han; Harrison, Oliver J.; Song, Hang; Smith, Adam W.; Huang, William Y. C.; Lin, Wan -Chen; Guo, Zhenhuan; Padmanabhan, Anup; et al

      2015-08-19

      Epithelial (E)-cadherin-mediated cell–cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit ?-catenin and exhibit remodeled cortical actin. Observations suggest thatmore »the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role.« less

    12. Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

      SciTech Connect (OSTI)

      Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.; Fringer, Oliver B.; Monismith, Stephen G.

      2014-12-17

      In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Doppler Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.

    13. Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.; Fringer, Oliver B.; Monismith, Stephen G.

      2014-12-17

      In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Dopplermore »Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.« less

    14. All-optical half-adder based on photonic mode junction Xianji Piao, Sunkyu Yu, and Namkyoo Park*

      E-Print Network [OSTI]

      Park, Namkyoo

      with the bi-level dynamic mode-conversion across the junction. 1. Introduction Junction structures, which is the core building block for the Arithmetic Logic Unit. Different with previous works in the photonic domain conversion. 2. Design Strategy and Results Fig. 1. Multi-junction realization of monolithic half-adder; (a

    15. MODELING OF TRIPLE JUNCTION A-SI SOLAR CELLS USING ASA: ANALYSIS OF DEVICE PERFORMANCE UNDER VARIOUS FAILURE SCENARIOS

      E-Print Network [OSTI]

      Deng, Xunming

      solar cells and/or the comparison of these predicted results with real multi-junction devices have beenMODELING OF TRIPLE JUNCTION A-SI SOLAR CELLS USING ASA: ANALYSIS OF DEVICE PERFORMANCE UNDER, University of Toledo, Toledo, OH 43606 ABSTRACT Triple junction a-Si solar cells have been modeled

    16. Nanobonding for Multi-Junction Solar Cells at Room Temperature T. Yu, M. M. R. Howlader*, F. Zhang, M. Bakr

      E-Print Network [OSTI]

      Howlader, Matiar R

      Nanobonding for Multi-Junction Solar Cells at Room Temperature T. Yu, M. M. R. Howlader*, F. Zhang of the interfacial properties of Si/GaAs indicates its potential use on the fabrication of multi-junction solar cells types of solar cells being studied, semiconductor multi-junction solar cells are gaining special

    17. Cooperative Research between NREL and Solar Junction Corp: Cooperative Research and Development Final Report, CRADA Number CRD-08-306

      SciTech Connect (OSTI)

      Friedman, D.

      2015-03-01

      NREL and Solar Junction Corp. will perform cooperative research on materials and devices that are alternatives to standard approaches with the goal of improving solar cell efficiency while lowering cost. The general purpose of this work is to model the performance of a multi-junction concentrator cell of Solar Junction, Inc. design under normal concentrator operating conditions.

    18. Contactless electronic transport in a bio-molecular junction

      SciTech Connect (OSTI)

      Hossain, Faruque M., E-mail: fhossain@unimelb.edu.au; Al-Dirini, Feras; Skafidas, Efstratios [Department of Electrical and Electronic Engineering, The University of Melbourne, Parkville 3010 (Australia); Center for Neural Engineering (CfNE), The University of Melbourne, Parkville 3010 (Australia)

      2014-07-28

      Molecular electronics hold promise for next generation ultra-low power, nano-scale integrated electronics. The main challenge in molecular electronics is to make a reliable interface between molecules and metal electrodes. Interfacing metals and molecules detrimentally affects the characteristics of nano-scale molecular electronic devices. It is therefore essential to investigate alternative arrangements such as contact-less tunneling gaps wherever such configurations are feasible. We conduct ab initio density functional theory and non-equilibrium Green's functions calculations to investigate the transport properties of a biocompatible glycine molecular junction. By analyzing the localized molecular orbital energy distributions and transmission probabilities in the transport-gap, we find a glycine molecule confined between two gold electrodes, without making a contact, is energetically stable and possesses high tunneling current resembling an excellent ohmic-like interface.

    19. Chemical Fabrication of Heterometallic Nanogaps for Molecular Transport Junctions

      SciTech Connect (OSTI)

      Chen, Xiaodong; Yeganeh, Sina; Qin, Lidong; Li, Shuzhou; Xue, Can; Braunschweig, Adam B.; Schatz, George C.; Ratner, Mark A.; Mirkin, Chad A.

      2009-01-01

      We report a simple and reproducible method for fabricating heterometallic nanogaps, which are made of two different metal nanorods separated by a nanometer-sized gap. The method is based upon on-wire lithography, which is a chemically enabled technique used to synthesize a wide variety of nanowire-based structures (e.g., nanogaps and disk arrays). This method can be used to fabricate pairs of metallic electrodes, which exhibit distinct work functions and are separated by gaps as small as 2 nm. Furthermore, we demonstrate that a symmetric thiol-terminated molecule can be assembled into such heterometallic nanogaps to form molecular transport junctions (MTJs) that exhibit molecular diode behavior. Theoretical calculations demonstrate that the coupling strength between gold and sulfur (Au-S) is 2.5 times stronger than that of Pt-S. In addition, the structures form Raman hot spots in the gap, allowing the spectroscopic characterization of the molecules that make up the MTJs.

    20. Stability of winding cosmic wall lattices with X type junctions

      E-Print Network [OSTI]

      Brandon Carter

      2009-11-30

      This work confirms the stability of a class of domain wall lattice models that can produce accelerated cosmological expansion, with pressure to density ratio $w=-1/3$ at early times, and with $w=-2/3$ at late times when the lattice scale becomes large compared to the wall thickness. For walls of tension $T_{I}$, the relevant X type junctions could be unstable (for a sufficiently acute intersection angle $\\alpha$) against separation into a pair of Y type junctions joined by a compound wall, only if the tension $T_{II}$ of the latter were less than $2T_{I}$ (and for an approximately right-angled intersection if it were less that $\\sqrt{2} T_{I}$) which can not occur in the class considered here. In an extensive category of multicomponent scalar field models of forced harmonic (linear or non-linear) type it is shown how the relevant tension -- which is the same as the surface energy density $U$ of the wall -- can be calculated as the minimum (geodesic) distance between the relevant vacuum states as measured on the space of field values $\\Phi^i$ using a positive definite (Riemannian) energy metric $dU^2=\\tilde G_{ij} d\\Phi^i d\\Phi^j$ that is obtained from the usual kinetic metric (which is flat for a model with ordinary linear kinetic part) by application of a conformal factor proportional to the relevant potential function $V$. For suitably periodic potential functions there will be corresponding periodic configurations -- with parallel walls characterised by incrementation of a winding number -- in which the condition for stability of large scale bunching modes is shown to be satisfied automatically. It is suggested that such a configuration -- with a lattice lengthscale comparable to intergalactic separation distances -- might have been produced by a late stage of cosmological inflation.

    1. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

      DOE Patents [OSTI]

      Madan, A.

      1984-12-10

      A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

    2. Reduced low frequency noise in electron beam evaporated MgO magnetic tunnel junctions

      SciTech Connect (OSTI)

      Diao, Z.; Feng, J. F.; Kurt, H.; Feng, G.; Coey, J. M. D. [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

      2010-05-17

      We compare low frequency noise in magnetic tunnel junctions with MgO barriers prepared by electron-beam evaporation with those prepared by radiofrequency sputtering, both showing a high tunneling magnetoresistance. The normalized noise parameter in the parallel state of junctions with evaporated barriers is at least one order of magnitude lower than that in junctions with sputtered barriers, and exhibits a weaker bias dependence. The lowest normalized noise is in the 10{sup -11} mum{sup 2} range. A lower density of oxygen vacancies acting as charge trap states in the evaporated MgO is responsible for the lower noise.

    3. Realistic-contact-induced enhancement of rectifying in carbon-nanotube/graphene-nanoribbon junctions

      SciTech Connect (OSTI)

      Zhang, Xiang-Hua [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China); Department of Electrical and Information Engineering, Hunan Institute of Engineering, Xiangtan 411101 (China); Li, Xiao-Fei, E-mail: xfli@theochem.kth.se [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Ling-Ling, E-mail: llwang@hnu.edu.cn; Xu, Liang; Luo, Kai-Wu [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China)

      2014-03-10

      Carbon-nanotube/graphene-nanoribbon junctions were recently fabricated by the controllable etching of single-walled carbon-nanotubes [Wei et al., Nat. Commun. 4, 1374 (2013)] and their electronic transport properties were studied here. First principles results reveal that the transmission function of the junctions show a heavy dependence on the shape of contacts, but rectifying is an inherent property which is insensitive to the details of contacts. Interestingly, the rectifying ratio is largely enhanced in the junction with a realistic contact and the enhancement is insensitive to the details of contact structures. The stability of rectifying suggests a significant feasibility to manufacture realistic all-carbon rectifiers in nanoelectronics.

    4. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

      E-Print Network [OSTI]

      Fong, David Michael

      2012-01-01

      Motivation Multi-junction (MJ) solar cells show particular promise as a future clean renewable energy

    5. Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

      E-Print Network [OSTI]

      Dunin-Borkowski, Rafal E.

      -bonded multi-junction solar cells Dietrich Häussler a , Lothar Houben b , Stephanie Essig c , Mert Kurttepeli online 20 July 2013 Keywords: Multi-junction solar cell Wafer bonding Interfaces Aberration corrected and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells. Multi-junction solar

    6. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

      E-Print Network [OSTI]

      Mariani, Giacomo

      2013-01-01

      photovoltaics: cohesive optical and electrical investigation of the complete solarphotovoltaics represents an emerging alternative to standard solarPhotovoltaics: Photon Management and Junction Engineering for Next-Generation Solar

    7. EFFECT OF PREPARATION PARAMETERS ON LIGHT SENSITIVITY IN SUPERCONDUCTIVE TUNNEL JUNCTIONS

      E-Print Network [OSTI]

      Paris-Sud XI, Université de

      , Italy Résumé. 2014 Des jonctions « tunnel » supraconductrices utilisant du sulfure de cadmium et du al. [17] have considered semiconductor barriers for low capacitance tunnel junctions. Light can be depo- sited in ultra high vacuum systems without fear of contamination. Work

    8. Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

      SciTech Connect (OSTI)

      Geisz, John F.; France, Ryan M.; Steiner, Myles A.; Friedman, Daniel J.; García, Iván

      2014-09-26

      Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be applied to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.

    9. Highly efficient organic multi-junction solar cells with a thiophene based donor material

      SciTech Connect (OSTI)

      Meerheim, Rico Körner, Christian; Leo, Karl

      2014-08-11

      The efficiency of organic solar cells can be increased by serial stacked subcells even upon using the same absorber material. For the multi-junction devices presented here, we use the small molecule donor material DCV5T-Me. The subcell currents were matched by optical transfer matrix simulation, allowing an efficiency increase from 8.3% for a single junction up to 9.7% for a triple junction cell. The external quantum efficiency of the subcells, measured under appropriate light bias illumination, is spectrally shifted due to the microcavity of the complete stack, resulting in a broadband response and an increased cell current. The increase of the power conversion efficiency upon device stacking is even stronger for large area cells due to higher influence of the resistance of the indium tin oxide anode, emphasizing the advantage of multi-junction devices for large-area applications.

    10. A market analysis for high efficiency multi-junction solar cells grown on SiGe

      E-Print Network [OSTI]

      Judkins, Zachara Steele

      2007-01-01

      Applications, markets and a cost model are presented for III-V multi-junction solar cells built on compositionally graded SiGe buffer layers currently being developed by professors Steven Ringell of Ohio State University ...

    11. Dispersion Mechanisms of a Tidal River Junction in the Sacramento–San Joaquin Delta, California

      E-Print Network [OSTI]

      Gleichauf, Karla T.; Wolfram, Phillip J.; Monsen, Nancy E.; Fringer, Oliver B.; Monismith, Stephen G.

      2014-01-01

      a Tidal River Junction in the Sacramento–San Joaquin Delta,networks, such as in the Sacramento–San Joaquin River Delta,transport and fate in the Sacramento–San Joaquin delta using

    12. Back to the crossroads of Flatbush--the junction--student housing for Brooklyn College

      E-Print Network [OSTI]

      Campbell, Keith A. (Keith Anthony)

      1988-01-01

      The crossroads of Flatbush (often called The Junction) is a five point intersection of vehicular and pedestrian traffic. A crossroad where ethnic groups step beyond subtle neighborhood boundaries and merge to use public ...

    13. Spin-polarized tunneling in MgO-based tunnel junctions with superconducting electrodes

      E-Print Network [OSTI]

      Schebaum, Oliver

      We prepared magnetic tunnel junctions with one ferromagnetic and one superconducting Al–Si electrode. Pure cobalt electrodes were compared with a Co–Fe–B alloy and the Heusler compound Co[subscript 2]FeAl. The polarization ...

    14. Universal transport signatures of Majorana fermions in superconductor-Luttinger liquid junctions

      E-Print Network [OSTI]

      Universal transport signatures of Majorana fermions in superconductor-Luttinger liquid junctions, University of California, Irvine, CA 92697 3 Institute of Quantum Information, California Institute of Technology, Pasadena, CA 91125 4 Department of Physics, California Institute of Technology, Pasadena, CA

    15. Direct imaging of coherent quantum transport in graphene p?n?p junctions

      E-Print Network [OSTI]

      Herbschleb, E. D.; Puddy, R. K.; Marconcini, P.; Griffiths, J. P.; Jones, G. A. C.; Macucci, M.; Smith, C. G.; Connolly, M. R.

      2015-09-11

      We use electrostatic lithography to fabricate a graphene p-n-p junction and exploit the coherence of weakly confined Dirac quasiparticles to image the underlying scattering potential using low-temperature scanning gate microscopy. The tip...

    16. Compound Josephson-junction coupler for flux qubits with minimal crosstalk

      E-Print Network [OSTI]

      Harris, R.; Lanting, T.; Berkley, A. J.; Johansson, J.; Johnson, M. W.; Bunyk, P.; Ladizinsky, E.; Oh, T.; Han, Siyuan

      2009-08-20

      An improved tunable coupling element for building networks of coupled rf-superconducting quantum interference device (rf-SQUID) flux qubits has been experimentally demonstrated. This new form of coupler, based on the compound Josephson-junction rf...

    17. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

      SciTech Connect (OSTI)

      Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

      2006-01-01

      We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

    18. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

      DOE Patents [OSTI]

      Wanlass, Mark W. (Golden, CO)

      1994-01-01

      A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

    19. Structured chaos in a devil's staircase of the Josephson junction

      SciTech Connect (OSTI)

      Shukrinov, Yu. M. [BLTP, JINR, Dubna, Moscow Region 141980 (Russian Federation); Botha, A. E., E-mail: bothaae@unisa.ac.za [Department of Physics, University of South Africa, Science Campus, Private Bag X6, Florida Park 1710 (South Africa); Medvedeva, S. Yu. [BLTP, JINR, Dubna, Moscow Region 141980 (Russian Federation); Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow Region 141700 (Russian Federation); Kolahchi, M. R. [Institute for Advanced Studies in Basic Sciences, P.O. Box 45195-1159, Zanjan (Iran, Islamic Republic of); Irie, A. [Department of Electrical and Electronic Systems Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya 321-8585 (Japan)

      2014-09-01

      The phase dynamics of Josephson junctions (JJs) under external electromagnetic radiation is studied through numerical simulations. Current-voltage characteristics, Lyapunov exponents, and Poincaré sections are analyzed in detail. It is found that the subharmonic Shapiro steps at certain parameters are separated by structured chaotic windows. By performing a linear regression on the linear part of the data, a fractal dimension of D?=?0.868 is obtained, with an uncertainty of ±0.012. The chaotic regions exhibit scaling similarity, and it is shown that the devil's staircase of the system can form a backbone that unifies and explains the highly correlated and structured chaotic behavior. These features suggest a system possessing multiple complete devil's staircases. The onset of chaos for subharmonic steps occurs through the Feigenbaum period doubling scenario. Universality in the sequence of periodic windows is also demonstrated. Finally, the influence of the radiation and JJ parameters on the structured chaos is investigated, and it is concluded that the structured chaos is a stable formation over a wide range of parameter values.

    20. Spin Josephson effect in topological superconductor-ferromagnet junction

      SciTech Connect (OSTI)

      Ren, C. D.; Wang, J.

      2014-03-21

      The composite topological superconductor (TS), made of one-dimensional spin-orbit coupled nanowire with proximity-induced s-wave superconductivity, is not a pure p-wave superconductor but still has a suppressed s-wave pairing. We propose to probe the spin texture of the p-wave pairing in this composite TS by examining possible spin supercurrents in an unbiased TS/ferromagnet junction. It is found that both the exchange-coupling induced and spin-flip reflection induced spin currents exist in the setup and survive even in the topological phase. We showed that besides the nontrivial p-wave pairing state accounting for Majorana Fermions, there shall be a trivial p-wave pairing state that contributes to spin supercurrent. The trivial p-wave pairing state is diagnosed from the mixing effect between the suppressed s-wave pairing and the topologically nontrivial p-wave pairing. The d vector of the TS is proved not to be rigorously perpendicular to the spin projection of p-wave pairings. Our findings are also confirmed by the Kitaev's p-wave model with a nonzero s-wave pairing.

    1. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

      SciTech Connect (OSTI)

      Gessert, T. A.

      2010-09-01

      Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

    2. Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction

      SciTech Connect (OSTI)

      Zide, J.M.O.; Kleiman-Shwarsctein, A.; Strandwitz, N.C.; Zimmerman, J.D.; Steenblock-Smith, T.; Gossard, A.C.; Forman, A.; Ivanovskaya, A.; Stucky, G.D.

      2006-04-17

      We report the molecular beam epitaxy growth of Al{sub 0.3}Ga{sub 0.7}As/GaAs multijunction solar cells with epitaxial, semimetallic ErAs nanoparticles at the interface of the tunnel junction. The states provided by these nanoparticles reduce the bias required to pass current through the tunnel junction by three orders of magnitude, and therefore drastically reduce the voltage losses in the tunnel junction. We have measured open-circuit voltages which are 97% of the sum of the constituent cells, which result in nearly double the efficiency of our multijunction cell with a conventional tunnel junction.

    3. A quantum optical valve in a nonlinear-linear resonator junction

      E-Print Network [OSTI]

      Eduardo Mascarenhas; Daniel Valente; Simone Montangero; Alexia Auffeves; Dario Gerace; M. Franca Santos

      2014-05-23

      Electronic diodes, which enable the rectification of an electrical energy flux, have played a crucial role in the development of current microelectronics after the invention of semiconductor p-n junctions. Analogously, signal rectification at specific target wavelengths has recently become a key goal in optical communication and signal processing. Here we propose a genuinely quantum device with the essential rectifying features being demonstrated in a general model of a nonlinear-linear junction of coupled resonators. It is shown that such a surprisingly simple structure is a versatile valve and may be alternatively tuned to behave as: a photonic diode, a single or two-photon rectified source turning a classical input into a quantum output depending on the input frequency, or a quantum photonic splitter. Given the relevance of non-reciprocal operations in integrated circuits, the nonlinear-linear junction realises a crucial building component in prospective quantum photonic applications.

    4. Nonequilibrium theory of a hot-electron bolometer with normal metal-insulator-superconductor tunnel junction

      SciTech Connect (OSTI)

      Golubev, Dmitri; Kuzmin, Leonid

      2001-06-01

      The operation of the hot-electron bolometer with normal metal-insulator-superconductor (NIS) tunnel junction as a temperature sensor is analyzed theoretically. The responsivity and the noise equivalent power (NEP) of the bolometer are obtained numerically for typical experimental parameters. Relatively simple approximate analytical expressions for these values are derived. The time constant of the device is also found. We demonstrate that the effect of the electron cooling by the NIS junction, which serves as a thermometer, can improve the sensitivity. This effect is also useful in the presence of the finite background power load. We discuss the effect of the correlation of the shot noise and the heat flow noise in the NIS junction. {copyright} 2001 American Institute of Physics.

    5. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

      SciTech Connect (OSTI)

      Werner, R.; Kleiner, R.; Koelle, D.; Petrov, A. Yu.; Davidson, B. A.; Mino, L. Alvarez

      2011-04-18

      We report resistance versus magnetic field measurements for a La{sub 0.65}Sr{sub 0.35}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.65}Sr{sub 0.35}MnO{sub 3} tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches {approx}1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

    6. Nonequilibrium transport through quantum-wire junctions and boundary defects for free massless bosonic fields

      E-Print Network [OSTI]

      Gaw?dzki, Krzysztof

      2015-01-01

      We consider a model of quantum-wire junctions where the latter are described by conformal-invariant boundary conditions of the simplest type in the multicomponent compactified massless scalar free field theory representing the bosonized Luttinger liquids in the bulk of wires. The boundary conditions result in the scattering of charges across the junction with nontrivial reflection and transmission amplitudes. The equilibrium state of such a system, corresponding to inverse temperature $\\beta$ and electric potential $V$, is explicitly constructed both for finite and for semi-infinite wires. In the latter case, a stationary nonequilibrium state describing the wires kept at different temperatures and potentials may be also constructed. The main result of the present paper is the calculation of the full counting statistics (FCS) of the charge and energy transfers through the junction in a nonequilibrium situation. Explicit expressions are worked out for the generating function of FCS and its large-deviations asym...

    7. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

      E-Print Network [OSTI]

      Fong, David Michael

      2012-01-01

      III! V Multijunction Solar Cells,” (2003). J. F. Geisz, etEfficiency Multi-Junction Solar Cells A thesis submitted inEfficiency Multi-Junction Solar Cells By David Michael Fong

    8. Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

      SciTech Connect (OSTI)

      Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

      2012-06-01

      We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. We found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several ?m were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.

    9. Base extrusion is found at helical junctions between right- and left-handed forms of DNA and RNA

      E-Print Network [OSTI]

      Kim, Doyoun

      Base extrusion is a major structural feature at the junction between B- and Z-DNA (the B–Z junction) where a base pair is broken, and the two bases are extruded from the double helix. Despite the demonstration of base ...

    10. Measurement of Component Cell Current-Voltage Characteristics in a Tandem-JunctionTwo-Terminal Solar Cell

      E-Print Network [OSTI]

      Deng, Xunming

      of multijunction solar cells. Keywords Measurement method, I-V characteristics, component cells, tandem junctionMeasurement of Component Cell Current-Voltage Characteristics in a Tandem- JunctionTwo-Terminal Solar Cell Chandan Das, Xianbi Xiang and Xunming Deng Department of Physics and Astronomy, University

    11. Measurements and Predictions of the Heat Transfer at the Tube-Fin Junction for Louvered Fin Heat Exchangers

      E-Print Network [OSTI]

      Thole, Karen A.

      Measurements and Predictions of the Heat Transfer at the Tube-Fin Junction for Louvered Fin Heat Transfer at the Tube-Fin Junction for Louvered Fin Heat Exchangers Abstract The dominant thermal resistance used to increase heat transfer by initiating new boundary layer growth and increasing surface area

    12. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

      SciTech Connect (OSTI)

      Yap, Yoke Khin

      2013-03-14

      Hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) are expected to have appealing new properties that are not available from pure BNNTs and CNTs. Theoretical studies indicate that BNNT/CNT junctions could be multifunctional and applicable as memory, spintronic, electronic, and photonics devices with tunable band structures. This will lead to energy and material efficient multifunctional devices that will be beneficial to the society. However, experimental realization of BNNT/CNT junctions was hindered by the absent of a common growth technique for BNNTs and CNTs. In fact, the synthesis of BNNTs was very challenging and may involve high temperatures (up to 3000 degree Celsius by laser ablation) and explosive chemicals. During the award period, we have successfully developed a simple chemical vapor deposition (CVD) technique to grow BNNTs at 1100-1200 degree Celsius without using dangerous chemicals. A series of common catalyst have then been identified for the synthesis of BNNTs and CNTs. Both of these breakthroughs have led to our preliminary success in growing two types of BNNT/CNT junctions and two additional new nanostructures: 1) branching BNNT/CNT junctions and 2) co-axial BNNT/CNT junctions, 3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNT/graphene junctions. We have started to understand their structural, compositional, and electronic properties. Latest results indicate that the branching BNNT/CNT junctions and QDs-BNNTs are functional as room-temperature tunneling devices. We have submitted the application of a renewal grant to continue the study of these new energy efficient materials. Finally, this project has also strengthened our collaborations with multiple Department of Energy�s Nanoscale Science Research Centers (NSRCs), including the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory, and the Center for Integrated Nanotechnologies (CINTs) at Sandia National Laboratories and Los Alamos National Laboratory. Results obtained during the current funding period have led to the publication of twelve peer reviewed articles, three review papers, two book and one encyclopedia chapters, and thirty eight conference/seminar presentation. One US provisional patent and one international patent have also been filed.

    13. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

      DOE Patents [OSTI]

      Sopori, Bhushan; Rangappan, Anikara

      2014-11-25

      Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

    14. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

      DOE Patents [OSTI]

      Wanlass, M.W.

      1994-12-27

      A single-junction solar cell is described having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of ''pinning'' the optimum band gap for a wide range of operating conditions at a value of 1.14[+-]0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap. 7 figures.

    15. Light-splitting photovoltaic system utilizing two dual-junction solar cells

      SciTech Connect (OSTI)

      Xiong, Kanglin; Yang, Hui; Lu, Shulong; Dong, Jianrong; Zhou, Taofei; Wang, Rongxin; Jiang, Desheng

      2010-12-15

      There are many difficulties limiting the further development of monolithic multi-junction solar cells, such as the growth of lattice-mismatched material and the current matching constraint. As an alternative approach, the light-splitting photovoltaic system is investigated intensively in different aspects, including the energy loss mechanism and the choice of energy bandgaps of solar cells. Based on the investigation, a two-dual junction system has been implemented employing lattice-matched GaInP/GaAs and InGaAsP/InGaAs cells grown epitaxially on GaAs and InP substrates, respectively. (author)

    16. Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

      DOE Patents [OSTI]

      Murray, Christopher S. (Bethel Park, PA); Wilt, David M. (Bay Village, OH)

      2000-01-01

      An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

    17. Several small Josephson junctions in a resonant cavity: Deviation from the Dicke model W. A. Al-Saidi* and D. Stroud

      E-Print Network [OSTI]

      Stroud, David

      Several small Josephson junctions in a resonant cavity: Deviation from the Dicke model W. A. Al-Saidi

    18. Decoherence in Josephson Phase Qubits from Junction Resonators R.W. Simmonds, K. M. Lang, D. A. Hite, S. Nam, D. P. Pappas, and John M. Martinis*

      E-Print Network [OSTI]

      Martinis, John M.

      previously [4]. The circuit has been improved by placing the junction in a superconducting loop of inductance

    19. Rapid, Enhanced IV Characterization of Multi-Junction PV Devices under One Sun at NREL: Preprint

      SciTech Connect (OSTI)

      Moriarty, Tom; France, Ryan; Steiner, Myles

      2015-09-15

      Multi-junction technology is rapidly advancing, which puts increasing demands on IV characterization resources. We report on a tool and procedure for fast turn-around of IV data under the reference conditions, but also under controlled variations from the reference conditions. This enhanced data set can improve further iterations of device optimization.

    20. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping

      E-Print Network [OSTI]

      Rommel, Sean

      Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick and A. Lochtefeld A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2

    1. Fast Harmonic Balance of SIS Mixers with Multiple Junctions and Superconducting Circuits

      E-Print Network [OSTI]

      Ward, John

      Fast Harmonic Balance of SIS Mixers with Multiple Junctions and Superconducting Circuits Frank Rice-47, Pasadena, CA 91125, USA. Abstract We have extended the spectral domain harmonic balance method-Raphson technique to achieve rapid convergence, even when many harmonics are included in the analysis. Another im

    2. High quality YBa2Cu307 Josephson junctions made by direct electron beam writing

      E-Print Network [OSTI]

      Nadgorny, Boris

      High quality YBa2Cu307 Josephson junctions made by direct electron beam writing S. K. Tolpygo, S beam writing over YBa,C&O, thin-tilm microbridges, using scanning transmission electron microscope fabricated by the technologically attractive method of direct electron beam writing. The idea of using

    3. Quantum Monte Carlo study of a disordered 2D Josephson junction array

      E-Print Network [OSTI]

      Stroud, David

      Quantum Monte Carlo study of a disordered 2D Josephson junction array W.A. Al-Saidi *, D. Stroud not be established even * Corresponding author. E-mail addresses: al-saidi.1@osu.edu (W.A. Al-Saidi), stroud

    4. Temperature study of Zero Bias Features using self-assembling tunnel junctions 

      E-Print Network [OSTI]

      Savitski, Stephen Ronald

      2000-01-01

      Inelastic Tunneling Spectroscopy (IETS). In a SATJ, a barrier gas is deposited in situ between two metal wires that can be remotely manipulated by a magnetic field, to vary the junction conductance. The ZBF is studied for platinum/neon/platinum tunnel...

    5. Josephson instantons and Josephson monopoles in a non-Abelian Josephson junction

      E-Print Network [OSTI]

      Nitta, Muneto

      2015-01-01

      Non-Abelian Josephson junction is a junction of non-Abelian color superconductors sandwiching an insulator, or non-Abelian domain wall if flexible, whose low-energy dynamics is described by a $U(N)$ principal chiral model with the conventional pion mass. A non-Abelian Josephson vortex is a non-Abelian vortex (color magnetic flux tube) residing inside the junction, that is described as a non-Abelian sine-Gordon soliton. In this paper, we propose Josephson instantons and Josephson monopoles, that is, Yang-Mills instantons and monopoles inside a non-Abelian Josephson junction, respectively, and show that they are described as $SU(N)$ Skyrmions and $U(1)^{N-1}$ vortices in the $U(N)$ principal chiral model without and with a twisted mass term, respectively. Instantons with a twisted boundary condition are reduced (or T-dual) to monopoles, implying that ${\\mathbb C}P^{N-1}$ lumps are T-dual to ${\\mathbb C}P^{N-1}$ kinks inside a vortex. Here we find $SU(N)$ Skyrmions are T-dual to $U(1)^{N-1}$ vortices inside a wa...

    6. Sexual Dimorphism in Neuromuscular Junction Size on a Muscle Used in Courtship

      E-Print Network [OSTI]

      Wade, Juli

      Sexual Dimorphism in Neuromuscular Junction Size on a Muscle Used in Courtship by Green Anole that is sexually dimorphic. This courtship consists of the extension of a bright red throat fan (dewlap) associated season, the sexual dimorphisms were maintained, suggesting that these fea- tures do not change

    7. The importance of Fe surface states for spintronic devices based on magnetic tunnel junctions

      SciTech Connect (OSTI)

      Chantis, Athanasios N

      2008-01-01

      In this article we give a review of our recent theoretical studies of the influence of Fe(001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs(001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.

    8. On the transmission of binary bits in discrete Josephson-junction arrays

      E-Print Network [OSTI]

      J. E. Macías-Díaz; A. Puri

      2011-12-02

      In this work, we use supratransmission and infratransmission in the mathematical modeling of the propagation of digital signals in weakly damped, discrete Josephson-junction arrays, using energy-based detection criteria. Our results show an efficient and reliable transmission of binary information.

    9. Submicron YBa2Cu3Ox ramp Josephson junctions Philippe V. Komissinski,a)

      E-Print Network [OSTI]

      Högberg, Björn

      into the submicron range, similar moves are likely in superconductor electronics. Smaller Josephson junctions with a high density of the superconducting critical current Jc permit, for ex- ample, rapid single flux on high-temperature superconductors, namely YBa2Cu3Ox YBCO , satisfy these conditions having high Ic

    10. In situ Formation of Highly Conducting Covalent Au-C Contacts for Single-Molecule Junctions

      SciTech Connect (OSTI)

      Cheng, Z.L.; Hybertsen, M.; Skouta, R.; Vazquez, H.; Widawsky, J.R.; Schneebeli, S.; Chen, W.; Breslow, R.; Venkataraman, L.

      2011-06-01

      Charge transport across metal-molecule interfaces has an important role in organic electronics. Typically, chemical link groups such as thiols or amines are used to bind organic molecules to metal electrodes in single-molecule circuits, with these groups controlling both the physical structure and the electronic coupling at the interface. Direct metal-carbon coupling has been shown through C60, benzene and {pi}-stacked benzene but ideally the carbon backbone of the molecule should be covalently bonded to the electrode without intervening link groups. Here, we demonstrate a method to create junctions with such contacts. Trimethyl tin (SnMe{sub 3})-terminated polymethylene chains are used to form single-molecule junctions with a break-junction technique. Gold atoms at the electrode displace the SnMe{sub 3} linkers, leading to the formation of direct Au-C bonded single-molecule junctions with a conductance that is {approx}100 times larger than analogous alkanes with most other terminations. The conductance of these Au-C bonded alkanes decreases exponentially with molecular length, with a decay constant of 0.97 per methylene, consistent with a non-resonant transport mechanism. Control experiments and ab initio calculations show that high conductances are achieved because a covalent Au-C sigma ({sigma}) bond is formed. This offers a new method for making reproducible and highly conducting metal-organic contacts.

    11. 1364 Brief Communication Gap junction protein connexin-43 interacts directly with

      E-Print Network [OSTI]

      Mullen, Sean P.

      Increasing evidence indicates that gap-junctional Cx43 ismediate intercellular communication-terminal tail of connexin-43 (Cx43), the phorylate the Cx43 C-terminal tail (CT) via SH2 and SH3 domain in the regulation of Cx43 channel C-terminal residues of Cx43 interact with the second PDZ domain of the Zona

    12. Thermal conductance of the junction between single-walled carbon nanotubes

      E-Print Network [OSTI]

      McGaughey, Alan

      conductances of the carbon nanotube (CNT) junctions that would be found in a CNT aerogel are predicted using of carbon nanotubes (CNTs) (e.g., aligned films, mats, and aerogels) are candidates for use in electronic issue in all of these applications. Our focus here is related to single-walled CNT aerogels, which

    13. Tunneling characteristics in chemical vapor deposited graphene hexagonal boron nitride graphene junctions

      E-Print Network [OSTI]

      Feenstra, Randall

      1 Tunneling characteristics in chemical vapor deposited graphene ­ hexagonal boron nitride ­ graphene junctions T. Roy1 , L. Liu2 , S. de la Barrera,3 B. Chakrabarti1,4 , Z. R. Hesabi1 , C. A. Joiner1 Abstract: Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate

    14. Direct injection tunnel spectroscopy of a p-n junction Edward M. Likovich,1

      E-Print Network [OSTI]

      Russell, Kasey

      Direct injection tunnel spectroscopy of a p-n junction Edward M. Likovich,1 Kasey J. Russell,1,a barrier, the collector current of a direct- injection device could be larger than that of a metal-base device by roughly P PBC 1-PQM -1 400. Parasitic effects in the direct-injection device may slightly

    15. Hot electron effect in nanoscopically thin photovoltaic junctions K. Kempa,1,2,a

      E-Print Network [OSTI]

      Huang, Jianyu

      with photon energy. The key to observing this effect, one of several so-called third generation solarHot electron effect in nanoscopically thin photovoltaic junctions K. Kempa,1,2,a M. J. Naughton,1 efficiency photo- voltaics PVs . One of the seminal concepts proposed for next-generation solar cells

    16. Conductance states of molecular junctions for encoding binary information: a computational approach 

      E-Print Network [OSTI]

      Agapito, Luis Alberto

      2009-06-02

      -molecule-metal and metal-molecule-semiconductor junctions are considered. The molecule used is an olygo(phenylene ethynylene) composed of three benzene rings and a nitro group in the middle ring; this molecule is referred hereafter as the nitroOPE molecule. Gold, silicon...

    17. Nonequilibrium transport through quantum-wire junctions and boundary defects for free massless bosonic fields

      E-Print Network [OSTI]

      Krzysztof Gaw?dzki; Clément Tauber

      2015-01-29

      We consider a model of quantum-wire junctions where the latter are described by conformal-invariant boundary conditions of the simplest type in the multicomponent compactified massless scalar free field theory representing the bosonized Luttinger liquids in the bulk of wires. The boundary conditions result in the scattering of charges across the junction with nontrivial reflection and transmission amplitudes. The equilibrium state of such a system, corresponding to inverse temperature $\\beta$ and electric potential $V$, is explicitly constructed both for finite and for semi-infinite wires. In the latter case, a stationary nonequilibrium state describing the wires kept at different temperatures and potentials may be also constructed. The main result of the present paper is the calculation of the full counting statistics (FCS) of the charge and energy transfers through the junction in a nonequilibrium situation. Explicit expressions are worked out for the generating function of FCS and its large-deviations asymptotics. For the purely transmitting case they coincide with those obtained in the litterature, but numerous cases of junctions with transmission and reflection are also covered. The large deviations rate function of FCS for charge and energy transfers is shown to satisfy the fluctuation relations and the expressions for FCS obtained here are compared with the Levitov-Lesovic formulae.

    18. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

      SciTech Connect (OSTI)

      Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

      2013-09-27

      AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

    19. TRIPLE-JUNCTION A-SI SOLAR CELLS WITH HEAVILY DOPED THIN INTERFACE LAYERS AT THE TUNNEL W. Wang, H. Povolny, W. Du, X.B. Liao and X. Deng

      E-Print Network [OSTI]

      Deng, Xunming

      TRIPLE-JUNCTION A-SI SOLAR CELLS WITH HEAVILY DOPED THIN INTERFACE LAYERS AT THE TUNNEL JUNCTIONS W of Toledo, Toledo, OH 43606 USA ABSTRACT Triple-junction a-Si based solar cells, having a structure of SS cells and between the middle and bottom component cells on the efficiency of triple- junction solar

    20. Electronic transport in biphenyl single-molecule junctions with carbon nanotubes electrodes: The role of molecular conformation and chirality

      SciTech Connect (OSTI)

      Brito Silva, C. A. Jr.; Granhen, E. R. [Pos-Graduacao em Engenharia Eletrica, Universidade Federal do Para, 66075-900 Belem, PA (Brazil); Silva, S. J. S. da; Leal, J. F. P. [Pos-Graduacao em Fisica, Universidade Federal do Para, 66075-110 Belem, PA (Brazil); Del Nero, J. [Departamento de Fisica, Universidade Federal do Para, 66075-110 Belem, PA (Brazil); Divisao de Metrologia de Materiais, Instituto Nacional de Metrologia, Normalizacao e Qualidade Industrial, 25250-020 Duque de Caxias, RJ (Brazil); Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ (Brazil); Pinheiro, F. A. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ (Brazil)

      2010-08-15

      We investigate, by means of ab initio calculations, electronic transport in molecular junctions composed of a biphenyl molecule attached to metallic carbon nanotubes. We find that the conductance is proportional to cos{sup 2} {theta}, with {theta} the angle between phenyl rings, when the Fermi level of the contacts lies within the frontier molecular orbitals energy gap. This result, which agrees with experiments in biphenyl junctions with nonorganic contacts, suggests that the cos{sup 2} {theta} law has a more general applicability, irrespective of the nature of the electrodes. We calculate the geometrical degree of chirality of the junction, which only depends on the atomic positions, and demonstrate that it is not only proportional to cos{sup 2} {theta} but also is strongly correlated with the current through the system. These results indicate that molecular conformation plays the preponderant role in determining transport properties of biphenyl-carbon nanotubes molecular junctions.

    1. 794 IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, VOL. 13, NO. 2, JUNE 2003 Novel In-Situ Fabricated Josephson Junctions

      E-Print Network [OSTI]

      Högberg, Björn

      794 IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, VOL. 13, NO. 2, JUNE 2003 Novel In--We demonstrate a high-temperature superconductor (HTS) Josephson junction geometry using only in situ interfaces

    2. EIS-0126: Remedial Actions at the Former Climax Uranium Company Uranium Mill Site, Grand Junction, Mesa County, Colorado

      Broader source: Energy.gov [DOE]

      The U.S. Department of Energy developed this EIS to assess the environmental impacts of remediating the residual radioactive materials left from the inactive uranium processing site and associated properties located in Grand Junction, Colorado.

    3. Study of a-SiGe:H films and nip devices used in high efficiency triple junction solar cells

      E-Print Network [OSTI]

      Deng, Xunming

      -layers in multi-junction amorphous silicon based solar cells [1]. The advantage is that by varying the amountStudy of a-SiGe:H films and n­i­p devices used in high efficiency triple junction solar cells and n­i­p solar cells for GeH4=Si2H6 ratio varying from 1.43 to 0. This results in a variation of band

    4. Comparison of graded and abrupt junction In,,,Ga,,,As heterojunction Much progress has been made fabricating high speed

      E-Print Network [OSTI]

      Levi, Anthony F. J.

      results of numerically simulating charge transport in graded and abrupt junction n-p-n HBTs lattice diagram of an abrupt junction n-p-n Alo,4sIn,,2As/Ino,s3Ga".~~~ HBT un- der forward bias. (b) Results fabricating high speed n-p-n heterojunction bipolar transistors (HBTs) lattice matched to InP. Very high speed

    5. Quantifying the relative molecular orbital alignment for molecular junctions with similar chemical linkage to electrodes

      E-Print Network [OSTI]

      Baldea, Ioan

      2015-01-01

      Estimating the relative alignment between the frontier molecular orbitals that dominates the charge transport through single-molecule junctions represents a challenge for theory. This requires approaches beyond the widely employed framework provided by the density functional theory, wherein the Kohn-Sham "orbitals" are treated as if they were real molecular orbitals, which is not the case. In this paper, we report results obtained by means of quantum chemical calculations, including the EOM-CCSD (equation-of-motion coupled-cluster singles and doubles), which is the state-of-the-art of quantum chemistry for medium-size molecules like those considered here. These theoretical results are validated against data on the molecular orbital energy offset relative to the electrodes' Fermi energy extracted from experiments for junctions based on 4,4'-bipyridine and 1,4-dicyanobenzene.

    6. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

      SciTech Connect (OSTI)

      Dhungana, Kamal B.; Pati, Ranjit, E-mail: patir@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States)

      2014-04-21

      Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy.

    7. Multiple junction cell characterization using the LBIC method : early results, issues, and pathways to improvement.

      SciTech Connect (OSTI)

      Finn, Jason R.; Granata, Jennifer E.; Hansen, Barry R.

      2010-03-01

      A light beam induced current (LBIC) measurement is a non-destructive technique that produces a spatial graphical representation of current response in photovoltaic cells with respect to position when stimulated by a light beam. Generally, a laser beam is used for these measurements because the spot size can be made very small, on the order of microns, and very precise measurements can be made. Sandia National Laboratories Photovoltaic System Evaluation Laboratory (PSEL) uses its LBIC measurement technique to characterize single junction mono-crystalline and multi-crystalline solar cells ranging from miniature to conventional sizes. Sandia has modified the already valuable LBIC technique to enable multi-junction PV cells to be characterized.

    8. Alternative Strategies for Maximizing the Output of Multi-Junction Photovoltaic Panels

      E-Print Network [OSTI]

      Abrams, Ze'ev R

      2014-01-01

      Multi-junction photovoltaics provide a logical method of increasing the utilization of solar power for a given area. However, their current design and fabrication methods invoke numerous material and cost complexities that limit their potential, particularly for flat panel paradigms. In this paper, three general strategies based on the electrical isolation of the internal sub-layers are described. These strategies involve current or voltage matching the sub-layers by varying of fractional absorption and areal coverage of individual cells within each sub-layer, as well as modifying their combined output using power electronics. A simplified theoretical description of these strategies is provided for pairs of junction materials that allows a more streamlined description of the requirements.

    9. Josephson instantons and Josephson monopoles in a non-Abelian Josephson junction

      E-Print Network [OSTI]

      Muneto Nitta

      2015-08-11

      Non-Abelian Josephson junction is a junction of non-Abelian color superconductors sandwiching an insulator, or non-Abelian domain wall if flexible, whose low-energy dynamics is described by a $U(N)$ principal chiral model with the conventional pion mass. A non-Abelian Josephson vortex is a non-Abelian vortex (color magnetic flux tube) residing inside the junction, that is described as a non-Abelian sine-Gordon soliton. In this paper, we propose Josephson instantons and Josephson monopoles, that is, Yang-Mills instantons and monopoles inside a non-Abelian Josephson junction, respectively, and show that they are described as $SU(N)$ Skyrmions and $U(1)^{N-1}$ vortices in the $U(N)$ principal chiral model without and with a twisted mass term, respectively. Instantons with a twisted boundary condition are reduced (or T-dual) to monopoles, implying that ${\\mathbb C}P^{N-1}$ lumps are T-dual to ${\\mathbb C}P^{N-1}$ kinks inside a vortex. Here we find $SU(N)$ Skyrmions are T-dual to $U(1)^{N-1}$ vortices inside a wall. Our configurations suggest a yet another duality between ${\\mathbb C}P^{N-1}$ lumps and $SU(N)$ Skyrmions as well as that between ${\\mathbb C}P^{N-1}$ kinks and $U(1)^{N-1}$ vortices, viewed from different host solitons. They also suggest a duality between fractional instantons and bions in the ${\\mathbb C}P^{N-1}$ model and those in the $SU(N)$ principal chiral model.

    10. Mathematical Contributions to the Dynamics of the Josephson Junctions: State of the Art and Open Problems

      E-Print Network [OSTI]

      Monica De Angelis

      2015-09-10

      Mathematical models related to some Josephson junctions are pointed out and attention is drawn to the solutions of certain initial boundary problems and to some of their estimates. In addition, results of rigorous analysis of the behaviour of these solutions when the time tends to infinity and when the small parameter tends to zero are cited. These analyses lead us to mention some of the open problems.

    11. Scalable Parallel Implementation of Bayesian Network to Junction Tree Conversion for Exact Inference1

      E-Print Network [OSTI]

      Hwang, Kai

      -case running time is shown to be O(n2 w/p+wrw n/p+n log p), where w is the clique width and r is the number stages. The combined time complexity of our parallel approach is O(n2 w/p + wrw n/p + n log pScalable Parallel Implementation of Bayesian Network to Junction Tree Conversion for Exact

    12. Voltage-controlled switching and thermal effects in VO{sub 2} nano-gap junctions

      SciTech Connect (OSTI)

      Joushaghani, Arash; Jeong, Junho; Stewart Aitchison, J.; Poon, Joyce K. S. [Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada); Paradis, Suzanne; Alain, David [Defence Research and Development Canada - Valcartier, 2459 Pie-XI Blvd. North, Quebec, Quebec G3J 1X5 (Canada)

      2014-06-02

      Voltage-controlled switching in lateral VO{sub 2} nano-gap junctions with different gap lengths and thermal properties was investigated. The effect of Joule heating on the phase transition was found to be strongly influenced by the device geometry, the contact material, and the current. Our results indicate that the VO{sub 2} phase transition was likely initiated electronically, which was sometimes followed by a secondary thermally induced transition.

    13. Physical model of the contact resistivity of metal-graphene junctions

      SciTech Connect (OSTI)

      Chaves, Ferney A., E-mail: ferneyalveiro.chaves@uab.cat; Jiménez, David [Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Cummings, Aron W. [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Roche, Stephan [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona (Spain)

      2014-04-28

      While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

    14. Terahertz time domain interferometry of a SIS tunnel junction and a quantum point contact

      SciTech Connect (OSTI)

      Karadi, C [Univ. of California, Berkeley, CA (United States). Dept. of Physics

      1995-09-01

      The author has applied the Terahertz Time Domain Interferometric (THz-TDI) technique to probe the ultrafast dynamic response of a Superconducting-Insulating-Superconducting (SIS) tunnel junction and a Quantum Point Contact (QPC). The THz-TDI technique involves monitoring changes in the dc current induced by interfering two picosecond electrical pulses on the junction as a function of time delay between them. Measurements of the response of the Nb/AlO{sub x}/Nb SIS tunnel junction from 75--200 GHz are in full agreement with the linear theory for photon-assisted tunneling. Likewise, measurements of the induced current in a QPC as a function of source-drain voltage, gate voltage, frequency, and magnetic field also show strong evidence for photon-assisted transport. These experiments together demonstrate the general applicability of the THz-TDI technique to the characterization of the dynamic response of any micron or nanometer scale device that exhibits a non-linear I-V characteristic. 133 refs., 49 figs.

    15. Transport in arrays of submicron Josephson junctions over a ground plane

      SciTech Connect (OSTI)

      Ho, Teressa Rae [Univ. of California, Berkeley, CA (US). Dept. of Physics

      1997-12-01

      One-dimensional (1D) and two-dimensional (2D) arrays of Al islands linked by submicron Al/Al{sub x}O{sub y}/Al tunnel junctions were fabricated on an insulating layer grown on a ground plane. The arrays were cooled to temperatures as low as 20 mK where the Josephson coupling energy E{sub J} of each junction and the charging energy E{sub C} of each island were much greater than the thermal energy k{sub B}T. The capacitance C{sub g} between each island and the ground plane was much greater than the junction capacitance C. Two classes of arrays were studied. In the first class, the normal state tunneling resistance of the junctions was much larger than the resistance quantum for single electrons, R{sub N}{much_gt} R{sub Q{sub e}}{identical_to} h/e{sup 2} {approx} 25.8 k{Omega}, and the islands were driven normal by an applied magnetic field such that E{sub J} = 0 and the array was in the Coulomb blockade regime. The arrays were made on degenerately-doped Si, thermally oxidized to a thickness of approximately 100 nm. The current-voltage (I - V) characteristics of a 1D and a 2D array were measured and found to display a threshold voltage V{sub T} below which little current flows. In the second class of arrays, the normal state tunneling resistance of the junctions was close to the resistance quantum for Cooper pairs, R{sub N}{approx}R{sub Q}{equivalent_to}h/4e{sup 4}{approx}6.45k{Omega}, such that E{sub J}/E{sub C}{approx}1. The arrays were made on GaAs/Al{sub 0.3}Ga{sub 0.7}As heterostructures with a two-dimensional electron gas approximately 100 nm below the surface. One array displayed superconducting behavior at low temperature. Two arrays displayed insulating behavior at low temperature, and the size of the Coulomb gap increased with increasing R{sub g}.

    16. Quantum Hall Effect in n-p-n and n-2D Topological Insulator-n Junctions G. M. Gusev,1

      E-Print Network [OSTI]

      Gusev, Guennady

      Quantum Hall Effect in n-p-n and n-2D Topological Insulator-n Junctions G. M. Gusev,1 A. D. Levin,1 TI) with locally controlled density allowing n-p-n and n-2D TI-n junctions. The resistance reveals quantization in the graphene p-n [1] or n-p-n [2,3] junctions, which has been attributed to chiral edge states

    17. Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate

      E-Print Network [OSTI]

      Psaltis, Demetri

      Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light://jap.aip.org/about/rights_and_permissions #12;Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light developed substrate that decouples the growth and scattering interfaces are investigated in n-i-p triple-junction

    18. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

      E-Print Network [OSTI]

      Atwater, Harry

      GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

    19. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

      E-Print Network [OSTI]

      Atwater, Harry

      FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS RobynAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising

    20. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells using AFM-Based Electrical Techniques with Nanometer Resolution

      SciTech Connect (OSTI)

      Jiang, C. S.; Heath, J. T.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.

      2011-01-01

      Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

    1. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells Using AFM-Based Electrical Techniques with Nanometer Resolution: Preprint

      SciTech Connect (OSTI)

      Jiang, C. S.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.; Heath, J. T.

      2011-07-01

      Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

    2. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

      SciTech Connect (OSTI)

      Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

      2014-10-06

      InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

    3. Electron microscopic single particle analysis of a tetrameric RuvA/RuvB/Holliday junction DNA complex

      SciTech Connect (OSTI)

      Mayanagi, Kouta [Nagahama Institute of Bio-Science and Technology, 1266 Tamura-cho, Nagahama, Shiga 526-0829 (Japan); Takara-Bio Endowed Division, Institute for Protein Research, Osaka University, 6-2-3 Furuedai, Suita, Osaka 565-0874 (Japan); BIRD, JST (Japan)], E-mail: maya@protein.osaka-u.ac.jp; Fujiwara, Yoshie [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Miyata, Tomoko [Graduate School of Frontier Biosciences, Osaka University, 1-3 Yamadaoka, Suita, Osaka 565-0871 (Japan); Morikawa, Kosuke [The Takara-Bio Endowed Division, Institute for Protein Research, Osaka University, 6-2-3 Furuedai, Suita, Osaka 565-0874 (Japan); CREST, JST (Japan)], E-mail: morikako@protein.osaka-u.ac.jp

      2008-01-11

      During the late stage of homologous recombination in prokaryotes, RuvA binds to the Holliday junction intermediate and executes branch migration in association with RuvB. The RuvA subunits form two distinct complexes with the Holliday junction: complex I with the single RuvA tetramer on one side of the four way junction DNA, and complex II with two tetramers on both sides. To investigate the functional roles of complexes I and II, we mutated two residues of RuvA (L125D and E126K) to prevent octamer formation. An electron microscopic analysis indicated that the mutant RuvA/RuvB/Holliday junction DNA complex formed the characteristic tripartite structure, with only one RuvA tetramer bound to one side of the Holliday junction, demonstrating the unexpected stability of this complex. The novel bent images of the complex revealed an intriguing morphological similarity to the structure of SV40 large T antigen, which belongs to the same AAA+ family as RuvB.

    4. Carcinoembryonic antigen promotes colorectal cancer progression by targeting adherens junction complexes

      SciTech Connect (OSTI)

      Bajenova, Olga; Chaika, Nina; Tolkunova, Elena; Davydov-Sinitsyn, Alexander; Gapon, Svetlana; Thomas, Peter; O’Brien, Stephen

      2014-06-10

      Oncomarkers play important roles in the detection and management of human malignancies. Carcinoembryonic antigen (CEA, CEACAM5) and epithelial cadherin (E-cadherin) are considered as independent tumor markers in monitoring metastatic colorectal cancer. They are both expressed by cancer cells and can be detected in the blood serum. We investigated the effect of CEA production by MIP101 colorectal carcinoma cell lines on E-cadherin adherens junction (AJ) protein complexes. No direct interaction between E-cadherin and CEA was detected; however, the functional relationships between E-cadherin and its AJ partners: ?-, ?- and p120 catenins were impaired. We discovered a novel interaction between CEA and beta-catenin protein in the CEA producing cells. It is shown in the current study that CEA overexpression alters the splicing of p120 catenin and triggers the release of soluble E-cadherin. The influence of CEA production by colorectal cancer cells on the function of E-cadherin junction complexes may explain the link between the elevated levels of CEA and the increase in soluble E-cadherin during the progression of colorectal cancer. - Highlights: • Elevated level of CEA increases the release of soluble E-cadherin during the progression of colorectal cancer. • CEA over-expression alters the binding preferences between E-cadherin and its partners: ?-, ?- and p120 catenins in adherens junction complexes. • CEA produced by colorectal cancer cells interacts with beta-catenin protein. • CEA over-expression triggers the increase in nuclear beta-catenin. • CEA over-expression alters the splicing of p120 catenin protein.

    5. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint

      SciTech Connect (OSTI)

      Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

      2006-05-01

      We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

    6. The effect of environmental coupling on tunneling of quasiparticles in Josephson junctions

      E-Print Network [OSTI]

      Mohammad H. Ansari; Frank K. Wilhelm; Urbasi Sinha; Aninda Sinha

      2013-11-07

      We study quasiparticle tunneling in Josephson tunnel junctions embedded in an electromagnetic environment. We identify tunneling processes that transfer electrical charge and couple to the environment in a way similar to that of normal electrons, and processes that mix electrons and holes and are thus creating charge superpositions. The latter are sensitive to the phase difference between the superconductor and are thus limited by phase diffusion even at zero temperature. We show that the environmental coupling is suppressed in many environments, thus leading to lower quasiparticle decay rates and thus better superconductor qubit coherence than previously expected. Our approach is nonperturbative in the environmental coupling strength.

    7. Multi-state magnetoresistance in ferromagnet/organic-ferromagnet/ferromagnet junctions

      SciTech Connect (OSTI)

      Hu, G. C. Zuo, M. Y.; Li, Y.; Ren, J. F.; Xie, S. J.

      2014-01-20

      Spin-dependent transport through a ferromagnetic metal/organic-ferromagnet/ferromagnet metal junction is investigated theoretically. It is demonstrated that the current through the device strongly depends on the alignment of the magnetization orientations of the electrodes and interlayer. The spin-related electron tunnelling between the ferromagnetic electrodes suffers a further spin selection induced by the spin-polarized states of the central organic ferromagnet. This work indicates an intriguing prospect of organic ferromagnets in spintronic devices, such as four-state magnetoresistance manipulated by a magnetic field.

    8. A Mathematical Aspect of A Tunnel-Junction for Spintronic Qubit

      E-Print Network [OSTI]

      Masao Hirokawa; Takuya Kosaka

      2013-09-05

      We consider the Dirac particle living in the 1-dimensional configuration space with a junction for a spintronic qubit. We give concrete formulae explicitly showing the one-to-one correspondence between every self-adjoint extension of the minimal Dirac operator and the boundary condition of the wave functions of the Dirac particle. We then show that the boundary conditions are classified into two types: one of them is characterized by two parameters and the other is by three parameters. Then, we show that Benvegnu and Dabrowski's four-parameter family can actually be characterized by three parameters, concerned with the reflection, penetration, and phase factor.

    9. Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

      SciTech Connect (OSTI)

      Tomasello, R.; Carpentieri, M.; Finocchio, G.

      2013-12-16

      This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed.

    10. T-junction waveguide-based combining high power microwave beams

      SciTech Connect (OSTI)

      Zhang Qiang; Yuan Chengwei; Liu Lie [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

      2011-08-15

      Waveguide-based combining microwave beams is an attractive technique for enhancing the output capacities of narrow-band high power microwave devices. A specific T-junction combiner is designed for combining the X/X band microwave beams, and the detailed combining method and experimental results are presented. In the experiments, two microwave sources which can generate gigawatt level microwaves are driven by a single accelerator simultaneously, and their operation frequencies are 9.41 and 9.60 GHz, respectively. The two microwave beams with durations of about 35 ns have been successfully combined, and no breakdown phenomenon occurs.

    11. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

      SciTech Connect (OSTI)

      Liu, X.; Zhang, X. W. Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L.

      2014-11-03

      We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

    12. Unpaired Majorana modes in Josephson-Junction Arrays with gapless bulk excitations

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Pino, M.; Tsvelik, A.; Ioffe, L. B.

      2015-11-06

      In this study, the search for Majorana bound states in solid-state physics has been limited to materials that display a gap in their bulk spectrum. We show that such unpaired states appear in certain quasi-one-dimensional Josephson-junction arrays with gapless bulk excitations. The bulk modes mediate a coupling between Majorana bound states via the Ruderman-Kittel-Yosida-Kasuya mechanism. As a consequence, the lowest energy doublet acquires a finite energy difference. For a realistic set of parameters this energy splitting remains much smaller than the energy of the bulk eigenstates even for short chains of length L~10.

    13. Electron transport in graphene/graphene side-contact junction by plane-wave multiple scattering method

      E-Print Network [OSTI]

      Li, Xiang-Guo; Zhang, X -G; Cheng, Hai-Ping

      2015-01-01

      Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such geometry presents a challenge to first-principles transport methods. We solve this problem by implementing a plane-wave based multiple scattering theory for electron transport. This implementation improves the computational efficiency over the existing plane-wave transport code, scales better for parallelization over large number of nodes, and does not require the current direction to be along a lattice axis. As a first application, we calculate the tunneling current through a side-contact graphene junction formed by two separate graphene sheets with the edges overlapping each other. We find that transport properties of this junction depend strongly on the AA or AB stacking within the overlapping region as well as the vacuum gap between two graphene sheets. Such transport beh...

    14. A Lattice Boltzmann study of the effects of viscoelasticity on droplet formation in microfluidic cross-junctions

      E-Print Network [OSTI]

      Gupta, Anupam

      2015-01-01

      Based on mesoscale lattice Boltzmann (LB) numerical simulations, we investigate the effects of viscoelasticity on the break-up of liquid threads in microfluidic cross-junctions, where droplets are formed by focusing a liquid thread of a dispersed (d) phase into another co-flowing continuous (c) immiscible phase. Working at small Capillary numbers, we investigate the effects of non-Newtonian phases in the transition from droplet formation at the cross-junction (DCJ) to droplet formation downstream of the cross-junction (DC) (Liu $\\&$ Zhang, ${\\it Phys. ~Fluids.}$ ${\\bf 23}$, 082101 (2011)). We will analyze cases with ${\\it Droplet ~Viscoelasticity}$ (DV), where viscoelastic properties are confined in the dispersed phase, as well as cases with ${\\it Matrix ~Viscoelasticity}$ (MV), where viscoelastic properties are confined in the continuous phase. Moderate flow-rate ratios $Q \\approx {\\cal O}(1)$ of the two phases are considered in the present study. Overall, we find that the effects are more pronounced in ...

    15. Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

      SciTech Connect (OSTI)

      Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

      2012-04-15

      We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

    16. Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

      SciTech Connect (OSTI)

      Atwater, H. A.

      2008-11-01

      We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

    17. e pn semiconductor junctions exhibit nonlinear currentvoltage characteristics and they are used to rectify and shape electrical signals. Exponential currentvoltage characteristics are sometimes used

      E-Print Network [OSTI]

      Wilamowski, Bogdan Maciej

      circuits. ere are over 20 different types of diodes using different properties of pn junctions or metal­semiconductor;8-2 Fundamentals of Industrial Electronics 8.1.1 pnJunctionEquation e n-type semiconductor material has a positive by free moving electrons with negative charges. Similarly, the p-type semiconductor material has a lattice

    18. NREL researchers develop a new tool that confirms the stability of the IMM solar cell's 1-eV metamorphic junction.

      E-Print Network [OSTI]

      .friedman@nrel.gov References: J.F. Geisz et al."40.8% Efficient Inverted Triple-Junction Solar cell with Two IndependentlyV metamorphic junction. To test the robustness of NREL's inverted metamorphic multijunction (IMM) solarNREL researchers develop a new tool that confirms the stability of the IMM solar cell's 1-e

    19. Observation of Energy Levels Quantization in Underdamped Josephson Junctions above the Classical-Quantum Regime Crossover Temperature

      SciTech Connect (OSTI)

      Silvestrini, P.; Ruggiero, B.; Russo, M.; Silvestrini, P.; Ruggiero, B.; Russo, M.; Palmieri, V.G.

      1997-10-01

      We present a clear observation of the presence of energy levels quantization in high quality Nb-AlO{sub x} -Nb underdamped Josephson junctions at temperatures above the quantum crossover temperature. This has been possible by extending the measurements of the escape rate out of the zero-voltage state at higher sweeping frequency (dI/dt up to 25A/sec) in order to induce nonstationary conditions in the energy potential describing the junction dynamics. {copyright} {ital 1997} {ital The American Physical Society}

    20. Noise and microresonance of critical current in Josephson junction induced by Kondo trap states

      E-Print Network [OSTI]

      Mohammad H. Ansari; Frank K. Wilhelm

      2011-12-01

      We analyze the impact of trap states in the oxide layer of a superconducting tunnel junctions, on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the current blockage due to repulsion at the occupied trap states, and the noise from electrons hopping across a trap. We extend previous studies of noninteracting traps to the case where the traps have on-site electron repulsion inside one ballistic channel. The repulsion not only allows the appropriate temperature dependence of 1/f noise, but also is a control to the coupling between the computational qubit and the spurious two-level systems inside the oxide dielectric. We use second order perturbation theory which allows to obtain analytical formulae for the interacting bound states and spectral weights, limited to small and intermediate repulsions. Remarkably, it still reproduces the main features of the model as identified from the Numerical Renormalization Group. We present analytical formulations for the subgap bound state energies, the singlet-doublet phase boundary, and the spectral weights. We show that interactions can reverse the supercurrent across the trap. We finally work out the spectrum of junction resonators for qubits in the presence of on-site repulsive electrons and analyze its dependence on microscopic parameters that may be controlled by fabrication.

    1. Hetero-junction photovoltaic device and method of fabricating the device

      DOE Patents [OSTI]

      Aytug, Tolga; Christen, David K; Paranthaman, Mariappan Parans; Polat, Ozgur

      2014-02-10

      A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

    2. Quantitative interpretation of the transition voltages in gold-poly(phenylene) thiol-gold molecular junctions

      SciTech Connect (OSTI)

      Wu, Kunlin; Bai, Meilin; Hou, Shimin; Sanvito, Stefano

      2013-11-21

      The transition voltage of three different asymmetric Au/poly(phenylene) thiol/Au molecular junctions in which the central molecule is either benzene thiol, biphenyl thiol, or terphenyl thiol is investigated by first-principles quantum transport simulations. For all the junctions, the calculated transition voltage at positive polarity is in quantitative agreement with the experimental values and shows weak dependence on alterations of the Au-phenyl contact. When compared to the strong coupling at the Au-S contact, which dominates the alignment of various molecular orbitals with respect to the electrode Fermi level, the coupling at the Au-phenyl contact produces only a weak perturbation. Therefore, variations of the Au-phenyl contact can only have a minor influence on the transition voltage. These findings not only provide an explanation to the uniformity in the transition voltages found for ?-conjugated molecules measured with different experimental methods, but also demonstrate the advantage of transition voltage spectroscopy as a tool for determining the positions of molecular levels in molecular devices.

    3. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

      SciTech Connect (OSTI)

      Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

      2014-10-21

      The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

    4. Junction silicon solar cells made with molecular beam glow discharge bombardment

      SciTech Connect (OSTI)

      Caine, E.J.

      1982-01-01

      The fabrication of silicon PN junction solar cells with molecular implanted emitter regions is described. A simple, economical high current (0.5 mA/cm/sup 2/), low voltage (4-6 kV) glow discharge apparatus without any ion mass separation is used for implantation. The discharge beam is characterized with a current-voltage conduction curve, radial profile of target sheet resistance and operating temperature of implant target. Molecular implantation compounds discussed include: boron trifluoride, trimethyl borate, boron trichloride, trimethyl phosphite, arsenic trifluoride, phosphorus trichloride, phosphorus oxychloride and arsenic trichloride. Annealing is accomplished with a Q-switched ruby laser and with a standard diffusion furnace. Solar cell performance parameters (conversion efficiency, quantum efficiency and junction ideality) are compared with cells conventionally implanted at 30 keV with /sup 11/B and /sup 31/P and cells made with a standard open tube phosphorus oxychloride diffusion. Cell substrate thickness was found to limit short circuit current. Total area simulated AM1 power conversion efficiencies of molecular cells without antireflection coatings or backsurface fields are at best 8.2% as compared to 9.0% for conventional implanted or diffused devices. To achieve optimum performance, laser light had to be incorporated in the molecular implant annealing procedure.

    5. Controllable fully spin-polarized transport in a ferromagnetically doped topological insulator junction

      SciTech Connect (OSTI)

      Zhou, Benliang; Tang, Dongsheng; Zhou, Guanghui, E-mail: ghzhou@hunnu.edu.cn [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081 (China); Zhou, Benhu [Department of Physics, Shaoyang University, Shaoyang 422001 (China)

      2014-04-21

      We investigate the energy band structure and the spin-dependent transport for a normal/ferromagnetic/normal two-dimension topological insulator (TI) junction. By diagonalizing Hamiltonian for the system, the band structure shows that the edge states on two sides are coupled resulting in a gap opening due to the transverse spatial confinement. Further, the exchange field induced by magnetic impurities can also modulate the band structure with two spin degenerate bands splitting. By using the nonequilibrium Green's function method, the dependence of spin-dependent conductance and spin-polarization on the Fermi energy, the exchange field strength and the ferromagnetic TI (FTI) length are also analyzed, respectively. Interestingly, the degenerate conductance plateaus for spin-up and -down channels are broken, and both the conductances are suppressed by magnetic impurities due to the time-reversal symmetry broken and inelastic scattering. The spin-dependent conductance shows different behaviors when the Fermi energy is tuned into different ranges. Moreover, the conductance can be fully spin polarized by tuning the Fermi energy and the exchange field strength, or by tuning the Fermi energy and the FTI length. Consequently, the junction can transform from a quantum spin Hall state to a quantum anomalous Hall state, which is very important to enable dissipationless charge current for designing perfect spin filter.

    6. VOLUME 77, NUMBER 20 P H Y S I C A L R E V I E W L E T T E R S 11 NOVEMBER 1996 One-Dimensional Localization of Quantum Vortices in Disordered Josephson Junction Arrays

      E-Print Network [OSTI]

      van Oudenaarden, Alexander

      of a square network of Josephson junctions in which each superconducting island is coupled to four nearest

    7. Triple-Junction a-Si Solar Cells Deposited With Improved Intrinsic Layers X. Deng, W. Wang, X.B. Liao, S. Han, H. Povolny, X.B. Xiang, and W. Du

      E-Print Network [OSTI]

      Deng, Xunming

      Triple-Junction a-Si Solar Cells Deposited With Improved Intrinsic Layers X. Deng, W. Wang, X of Toledo, Toledo, OH 43606 ABSTRACT Triple-junction a-Si/a-SiGe/a-SiGe solar cells are fabricated in our-efficiency triple-junction solar cells. The general approach and experimental details were described in an earlier

    8. The benzene metabolite trans,trans-muconaldehyde blocks gap junction intercellular communication by cross-linking connexin43

      SciTech Connect (OSTI)

      Rivedal, Edgar Leithe, Edward

      2008-11-01

      Benzene is used at large volumes in many different human activities. Hematotoxicity and cancer-causation as a result of benzene exposure was recognized many years ago, but the mechanisms involved remain unclear. Aberrant regulation of gap junction intercellular communication (GJIC) has been linked to both cancer induction and interference with normal hematopoietic development. We have previously suggested that inhibition of GJIC may play a role in benzene toxicity since benzene metabolites were found to block GJIC, the ring-opened trans,trans-muconaldehyde (MUC) being the most potent metabolite. In the present work we have studied the molecular mechanisms underlying the MUC-induced inhibition of gap junctional communication. We show that MUC induces cross-linking of the gap junction protein connexin43 and that this is likely to be responsible for the induced inhibition of GJIC, as well as the loss of connexin43 observed in Western blots. We also show that glutaraldehyde possesses similar effects as MUC, and we compare the effects to that of formaldehyde. The fact that glutaraldehyde and formaldehyde have been associated with induction of leukemia as well as disturbance of hematopoiesis, strengthens the possible link between the effect of MUC on gap junctions, and the toxic effects of benzene.

    9. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes

      E-Print Network [OSTI]

      Wetzel, Christian M.

      Keywords: GaInN/GaN Light emitting diode temperature Micro-Raman Photoluminescence Electroluminescence well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescenceJunction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting

    10. Calcium niobate nanosheets as a novel electron transport material for solution-processed multi-junction polymer solar cells

      E-Print Network [OSTI]

      Osterloh, Frank

      Calcium niobate nanosheets as a novel electron transport material for solution-processed multi-junction polymer solar cells Lilian Chang,a Michael A. Holmes,b Mollie Waller,b Frank E. Osterlohb and Adam J-processed tandem polymer solar cells are demonstrated using stacked perovskite, (TBA,H) Ca2Nb3O10 (CNO

    11. FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE and X. Deng1,2

      E-Print Network [OSTI]

      Deng, Xunming

      FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE SUBSTRATES A. Vijh1,2 , X. Yang1 , W of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous), and the effect of tie coats on film adhesion. INTRODUCTION Amorphous silicon (a-Si) based solar cells

    12. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

      E-Print Network [OSTI]

      Wu, Y.; Hasan, T.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q.

      2015-02-05

      for the removal of the native oxide layer on the GaN substrate to form the Schottky junction. First, the GaN substrate is ultrasonically degreased using acetone, ethanol, and deionized (DI) water for 5 min each. The substrate is then treated with a buffered...

    13. Theory of Graphene-Insulator-Graphene Tunnel Junctions S. C. de la Barrera, Qin Gao, and R. M. Feenstra

      E-Print Network [OSTI]

      Feenstra, Randall

      to vertical graphene-insulator-graphene (GIG) tunneling structures. The first such report dealt with coupled electrodes, the single-particle tunneling characteristics of GIG devices can be highly nonlinear.3 The reason by Britnell et al. from GIG junctions did not display any NDR.4 Indeed, their theoretical description

    14. Mode-hopping mechanism generating colored noise in a magnetic tunnel junction based spin torque oscillator

      SciTech Connect (OSTI)

      Sharma, Raghav; Dürrenfeld, P.; Iacocca, E.; Heinonen, O. G.; Åkerman, J.; Muduli, P. K.

      2014-09-29

      The frequency noise spectrum of a magnetic tunnel junction based spin torque oscillator is examined where multiple modes and mode-hopping events are observed. The frequency noise spectrum is found to consist of both white noise and 1/f frequency noise. We find a systematic and similar dependence of both white noise and 1/f frequency noise on bias current and the relative angle between the reference and free layers, which changes the effective damping and hence the mode-hopping behavior in this system. The frequency at which the 1/f frequency noise changes to white noise increases as the free layer is aligned away from the anti-parallel orientation w.r.t the reference layer. These results indicate that the origin of 1/f frequency noise is related to mode-hopping, which produces both white noise as well as 1/f frequency noise similar to the case of ring lasers.

    15. Noise and microresonance of critical current in Josephson junction induced by Kondo trap states

      E-Print Network [OSTI]

      Ansari, Mohammad H

      2011-01-01

      We analyze the impact of trap states in the oxide layer of a superconducting tunnel junctions, on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the current blockage due to repulsion at the occupied trap states, and the noise from electrons hopping across a trap. We extend previous studies of noninteracting traps to the case where the traps have on-site electron repulsion inside one ballistic channel. The repulsion not only allows the appropriate temperature dependence of 1/f noise, but also is a control to the coupling between the computational qubit and the spurious two-level systems inside the oxide dielectric. We use second order perturbation theory which allows to obtain analytical formulae for the interacting bound states and spectral weights, limited to small and intermediate repulsions. Remarkably, it still reproduces the main features of the model as identified from the Numerical Renormalization Group. We present ...

    16. Investigation of photoelectrode redox polymer junctions. Technical report, 16 November-15 January 1984

      SciTech Connect (OSTI)

      Cook, R.L.; Sammells, A.F.

      1985-01-15

      The n-CdS flatband potential in the solid-state cell n-CdS/Nafion 117 + redox species/Au was shifted progressively in a cathode directed upon the introduction of FeCp2, FeCp2 + Ru(bpy)3(2+) into the SPE. This cathodic shift was consistent with that for the oxidation potentials seen for Ru(bpy)3(2+) (E1/2 = 1.25V vs SCE) and FeCp2 (0.285V vs SCE) in acetonitrile. Such perturbations of semiconductor properties can be expected to form the basis of a detector technology when the semiconductor/SPE junction is exposed to selected chemical species.

    17. Interfacial electronic transport phenomena in single crystalline Fe-MgO-Fe thin barrier junctions

      SciTech Connect (OSTI)

      Gangineni, R. B.; Negulescu, B.; Baraduc, C.; Gaudin, G.

      2014-05-05

      Spin filtering effects in nano-pillars of Fe-MgO-Fe single crystalline magnetic tunnel junctions are explored with two different sample architectures and thin MgO barriers (thickness: 3–8 monolayers). The two architectures, with different growth and annealing conditions of the bottom electrode, allow tuning the quality of the bottom Fe/MgO interface. As a result, an interfacial resonance states (IRS) is observed or not depending on this interface quality. The IRS contribution, observed by spin polarized tunnel spectroscopy, is analyzed as a function of the MgO barrier thickness. Our experimental findings agree with theoretical predictions concerning the symmetry of the low energy (0.2?eV) interfacial resonance states: a mixture of ?{sub 1}-like and ?{sub 5}-like symmetries.

    18. Controllable 0 ? ? transition in iron pnictide superconductor junctions with a spacer of strong ferromagnet

      SciTech Connect (OSTI)

      Liu, S. Y.; Tao, Y. C. Ji, T. T.; Di, Y. S.; Hu, J. G.

      2014-03-17

      We investigate the control of 0?? transition in Josephson junctions consisting of a highly spin-polarized ferromagnet coupled to two iron pnictide superconductors (SCs). It is shown that, a 0?? transition as a function of interband coupling strength is always exhibited, which can be experimentally used to discriminate the s{sub ±}-wave pairing symmetry in the iron pnictide SCs from the s{sub ++}-wave one in MgB{sub 2}. By tuning the doping level in the s{sub ±}-wave SCs, one can vary the interband coupling strength so as to obtain the controllable 0?? transition. This device may be realized with current technologies and has practical use in Cooper pair spintronics and quantum information.

    19. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

      SciTech Connect (OSTI)

      Honjo, H. Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T.; Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N.; Ishihara, K.; Ohno, H.

      2014-05-07

      We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8?mA, respectively.

    20. Tuning the thickness of electrochemically grafted layers in large area molecular junctions

      SciTech Connect (OSTI)

      Fluteau, T.; Bessis, C.; Barraud, C. Della Rocca, M. L.; Lafarge, P.; Martin, P.; Lacroix, J.-C.

      2014-09-21

      We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2–27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

    1. High performance anti-reflection coatings for broadband multi-junction solar cells

      SciTech Connect (OSTI)

      AIKEN,DANIEL J.

      2000-02-23

      The success of bandgap engineering has made high efficiency broadband multi-junction solar cells possible with photo-response out to the band edge of Ge. Modeling has been conducted which suggests that current double layer anti-reflection coating technology is not adequate for these devices in certain cases. Approaches for the development of higher performance anti-reflection coatings are examined. A new AR coating structure based on the use of Herpin equivalent layers is presented. Optical modeling suggests a decrease in the solar weighted reflectance of over 2.5{percent} absolute as a result. This structure requires no additional optical material development and characterization because no new optical materials are necessary. Experimental results and a sensitivity analysis are presented.

    2. A quasi-classical mapping approach to vibrationally coupled electron transport in molecular junctions

      SciTech Connect (OSTI)

      Li, Bin; Miller, William H.; Wilner, Eli Y.; Thoss, Michael

      2014-03-14

      We develop a classical mapping approach suitable to describe vibrationally coupled charge transport in molecular junctions based on the Cartesian mapping for many-electron systems [B. Li and W. H. Miller, J. Chem. Phys. 137, 154107 (2012)]. To properly describe vibrational quantum effects in the transport characteristics, we introduce a simple transformation rewriting the Hamiltonian in terms of occupation numbers and use a binning function to facilitate quantization. The approach provides accurate results for the nonequilibrium Holstein model for a range of bias voltages, vibrational frequencies, and temperatures. It also captures the hallmarks of vibrational quantum effects apparent in step-like structure in the current-voltage characteristics at low temperatures as well as the phenomenon of Franck-Condon blockade.

    3. SU-E-T-426: Dose Delivery Accuracy in Breast Field Junction for Free Breath and Deep Inspiration Breath Hold Techniques

      SciTech Connect (OSTI)

      Epstein, D; Shekel, E; Levin, D

      2014-06-01

      Purpose: The purpose of this work was to verify the accuracy of the dose distribution along the field junction in a half beam irradiation technique for breast cancer patients receiving radiation to the breast or chest wall (CW) and the supraclavicular LN region for both free breathing and deep inspiration breath hold (DIBH) technique. Methods: We performed in vivo measurements for nine breast cancer patients receiving radiation to the breast/CW and to the supraclavicular LN region. Six patients were treated to the left breast/CW using DIBH technique and three patients were treated to the right breast/CW in free breath. We used five microMOSFET dosimeters: three located along the field junction, one located 1 cm above the junction and the fifth microMOSFET located 1 cm below the junction. We performed consecutive measurements over several days for each patient and compared the measurements to the TPS calculation (Eclipse, Varian™). Results: The calculated and measured doses along the junction were 0.97±0.08 Gy and 1.02±0.14 Gy, respectively. Above the junction calculated and measured doses were 0.91±0.08 Gy and 0.98±0.09 Gy respectively, and below the junction calculated and measured doses were 1.70±0.15 Gy and 1.61±0.09 Gy, respectively. All differences were not statistically significant. When comparing calculated and measured doses for DIBH patients only, there was still no statistically significant difference between values for all dosimeter locations. Analysis was done using the Mann-Whitney Rank-Sum Test. Conclusion: We found excellent correlation between calculated doses from the TPS and measured skin doses at the junction of several half beam fields. Even for the DIBH technique, where there is more potential for variance due to depth of breath, there is no over or underdose along the field junction. This correlation validates the TPS, as well an accurate, reproducible patient setup.

    4. InGaP/GaAs Inverted Dual Junction Solar Cells For CPV Applications Using Metal-Backed Epitaxial Lift-Off

      SciTech Connect (OSTI)

      Bauhuis, Gerard J.; Mulder, Peter; Haverkamp, Erik J.; Schermer, John J.; Nash, Lee J.; Fulgoni, Dominic J. F.; Ballard, Ian M.; Duggan, Geoffrey

      2010-10-14

      The epitaxial lift-off (ELO) technique has been combined with inverted III-V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO platform we have first grown a GaAs single junction PV cell to establish the basic layer release process and cell processing steps followed by the growth, fabrication and test of an inverted InGaP/GaAs dual junction structure.

    5. Existing Whole-House Solutions Case Study: Conway Street Apartments - Greenfield, Massachusetts

      SciTech Connect (OSTI)

      2014-12-01

      Through recent research efforts, CARB has been evaluating strategies and technologies that can make dramatic improvements in energy performance in multifamily buildings. In this project, the team helped to transform a 100-year-old empty school building into 12 high performance apartments with low energy costs. The advanced features included an excellent thermal envelope of closed-cell spray foam and triple-pane windows, ductless heat pumps, solar thermal hot water system, and photovoltaic system.

    6. Building America Case Study: Conway Street Apartments, Greenfield, Massachusetts (Fact Sheet)

      SciTech Connect (OSTI)

      Not Available

      2014-12-01

      While single-family, detached homes account for 63% of households (EIA 2009); multi-family homes account for a very large portion of that remaining housing stock, and this fraction is growing. Through recent research efforts, CARB has been evaluating strategies and technologies that can make dramatic improvements in energy performance in multi-family buildings

    7. Implementing various lean methodologies and creating a business development plan at an ABB Greenfield site

      E-Print Network [OSTI]

      Sosa Rangel, Miguel Ernesto

      2009-01-01

      As part of its strategic initiatives, ABB inaugurated a 100,000 sq-m campus for an Engineering, Sourcing, and Manufacturing Operations center in San Luis Potosi (SLP), Mexico in May 2008. The ramp-up of the SLP site ...

    8. New Whole-House Solutions Case Study: Rural Development, Greenfield, Massachusetts

      SciTech Connect (OSTI)

      none,

      2013-09-01

      This builder worked with Consortium for Advanced Residential Buildings to design affordable HERS-8 homes (60 w/o PV), with double-stud walls heavy insulation, low-load sealed-combustion gas space heaters, triple-pane windows, solar water heating, and PV

    9. Hawaii energy strategy project 2: Fossil energy review. Task 3 -- Greenfield options: Prospects for LNG use

      SciTech Connect (OSTI)

      Breazeale, K.; Fesharaki, F.; Fridley, D.; Pezeshki, S.; Wu, K.

      1993-12-01

      This paper begins with an overview of the Asia-Pacific LNG market, its major players, and the likely availability of LNG supplies in the region. The discussion then examines the possibilities for the economic supply of LNG to Hawaii, the potential Hawaiian market, and the viability of an LNG project on Oahu. This survey is far from a complete technical assessment or an actual engineering/feasibility study. The economics alone cannot justify LNG`s introduction. The debate may continue as to whether fuel diversification and environmental reasons can outweigh the higher costs. Several points are made. LNG is not a spot commodity. Switching to LNG in Hawaii would require a massive, long-term commitment and substantial investments. LNG supplies are growing very tight in the Asia-Pacific region. Some of the environmental benefits of LNG are not entirely relevant in Hawaii because Hawaii`s air quality is generally excellent. Any air quality benefits may be more than counterbalanced by the environmental hazards connected with large-scale coastal zone construction, and by the safety hazards of LNG carriers, pipelines, etc. Lastly, LNG is not suitable for all energy uses, and is likely to be entirely unsuitable for neighbor island energy needs.

    10. The U.S. Burning Plasma Program C.M. Greenfield

      E-Print Network [OSTI]

      for burning plasma research ­ US Burning Plasma Organization (created 2005): currently 283 registered members

    11. New Whole-House Solutions Case Study: Rural Development Inc., Wisdom Way Solar Village, Greenfield, MA

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy Bills and Reduce Carbon Pollution |ofNewInsight Homes

    12. Building America Technology Solutions for New and Existing Homes: New Insights for Improving the Designs of Flexible Duct Junction Boxes (Fact Sheet)

      Office of Energy Efficiency and Renewable Energy (EERE)

      IBACOS explored the relationships between pressure and physical configurations of flexible duct junction boxes by using computational fluid dynamics simulations to predict individual box parameters and total system pressure, thereby ensuring improved HVAC performance.

    13. Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

      SciTech Connect (OSTI)

      Kanai, S.; Nakatani, Y.; Yamanouchi, M.; Ikeda, S.; Sato, H.; Matsukura, F.; Ohno, H.

      2014-05-26

      We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone.

    14. Design of Cyclic-ADT Peptides to Improve Drug Delivery to the Brain via Inhibition of E-Cadherin Interactions at the Adherens Junction

      E-Print Network [OSTI]

      Laksitorini, Marlyn Dian

      2012-08-31

      ]. This disrupts the tight junction integrity as observed by the lowering of TEER values and increased inulin transport across MDCK monolayers. An FDA-approved adenosine agonist (Lexiscan) can alter RhoA and Rac1 and cause cellular cytoskeleton rearrangement...]. This disrupts the tight junction integrity as observed by the lowering of TEER values and increased inulin transport across MDCK monolayers. An FDA-approved adenosine agonist (Lexiscan) can alter RhoA and Rac1 and cause cellular cytoskeleton rearrangement...

    15. Tip-contact related low-bias negative differential resistance and rectifying effects in benzene–porphyrin–benzene molecular junctions

      SciTech Connect (OSTI)

      Cheng, Jue-Fei; Zhou, Liping E-mail: leigao@suda.edu.cn; Liu, Man; Yan, Qiang; Han, Qin; Gao, Lei E-mail: leigao@suda.edu.cn

      2014-11-07

      The electronic transport properties of benzene–porphyrin–benzene (BPB) molecules coupled to gold (Au) electrodes were investigated. By successively removing the front-end Au atoms, several BPB junctions with different molecule-electrode contact symmetries were constructed. The calculated current–voltage (I–V) curves depended strongly on the contact configurations between the BPB molecules and the Au electrodes. In particular, a significant low-voltage negative differential resistance effect appeared at ?0.3 V in the junctions with pyramidal electrodes on both sides. Along with the breaking of this tip-contact symmetry, the low-bias negative differential resistance effect gradually disappeared. This tip-contact may be ideal for use in the design of future molecular devices because of its similarity with experimental processes.

    16. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

      SciTech Connect (OSTI)

      Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

      2014-07-15

      Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ?1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

    17. Movement of the boundary of a p-n junction in GaAs:Si under gyrotronic irradiation

      SciTech Connect (OSTI)

      Sukach, G. A.; Kidalov, V. V.

      2011-12-15

      It is shown that, by using a gyratron, it is possible to control the position of a p-n junction in an already fabricated light-emitting structure. A shift of the compensated region in the emitting structure based on GaAs:Si is caused by the motion of impurities in the field of thermoelastic stresses appearing in the course of sample cooling after gyrotronic irradiation.

    18. Effect of Dual-Function Nano-Structured Silicon Oxide Thin Film on Multi-Junction Solar Cells

      SciTech Connect (OSTI)

      Yan, B.; Sivec, L.; Yue, G.; Jiang, C. S.; Yang, J.; Guha, S.

      2011-01-01

      We present our recent study of using nano-structured hydrogenated silicon oxide films (nc-SiO{sub x}:H) as a dual-function layer in multi-junction solar cells. The nc-SiO{sub x}:H films were deposited using very high frequency glow discharge of a SiH{sub 4} (or Si{sub 2}H{sub 6}), CO{sub 2}, PH{sub 3}, and H{sub 2} gas mixture. By optimizing deposition parameters, we obtained 'dual function' nc-SiO{sub x}:H material characterized by a conductivity suitable for use as an n layer and optical properties suitable for use as an inter-reflection layer. We tested the nc-SiO{sub x}:H by replacing the normal n-type material in the tunnel junction of a multi-junction structure. The advantage of the dual-function nc-SiO{sub x}:H layer is twofold; one is to simplify the cell structure, and the other is to reduce any optical loss associated with the inter-reflection layer. Quantum efficiency measurements show the gain in top cell current is equal to or greater than the loss in bottom cell current for a-Si:H/nc-Si:H structures. In addition, a thinner a-Si:H top cell with the nc-SiO{sub x}:H n layer improves the top-cell stability, thereby providing higher stabilized solar cell efficiency. We also used the dual-function layer between the middle and the bottom cells in a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. The gain in the middle cell current is {approx}1.0 mA/cm{sup 2}, leading to an initial active-area efficiency of 14.8%.

    19. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

      DOE Patents [OSTI]

      Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO); Friedman, Daniel J. (Lakewood, CO)

      2001-01-01

      A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

    20. The effects of laser scanning on the characteristics of a p-n junction diode in dislocated silicon 

      E-Print Network [OSTI]

      Michael, Mark Wayne

      1984-01-01

      interface effects. The guard ring region extends deeper and is more lightly doped than the diode region under investigation. The lighter doping of the guard ring results in a higher breakdown voltage than the diode region. This insures that the observed...THE EFFECTS OF LASER SCANNING ON THE CHARACTERISTICS OF A p-n JUNCTION DIODE IN DISLOCATED SILICON A Thesis by NARK WAYNE MICHAEL Submitted to the Graduate College of Texas ARM University in partial fulfillment for the degree of MASTER...

    1. Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS{sub 2} films

      SciTech Connect (OSTI)

      Sutar, Surajit; Agnihotri, Pratik; Comfort, Everett; Ung Lee, Ji; Taniguchi, T.; Watanabe, K.

      2014-03-24

      Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS{sub 2}. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS{sub 2} flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS{sub 2} flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4{sub kB}T is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.

    2. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

      SciTech Connect (OSTI)

      Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

      2006-01-01

      Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

    3. Laser annealing of ion implanted CZ silicon for solar cell junction formation. Quarterly report No. 1

      SciTech Connect (OSTI)

      Katzeff, J. S.

      1980-07-01

      A project to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation on solar cells is described. A Q-switched Nd:Glass laser system is used operating in the 1064 (regular) and 532 (with frequency doubler) nm wavelengths. The laser output is in excess of 30 joules with a 20 to 50 ns pulse duration. Material used in this investigation is 3-inch diameter CZ silicon, P-type 0.014 inches thick, 10..cap omega..-cm resistivity, <100> orientation. Three wafer surface conditions are being evaluated in this pulse annealing investigation: chem-polished, texture etched, and flash etched. Annealing was performed with and without beam homogenization. Both modes showed excellent lattice recovery from the implant-induced damage as analyzed using Rutherford backscattering techniques. Homogenization of the beam was performed using a fused silica rod configured with a 90/sup 0/ bend. The unhomogenized annealing was performed using a plano-concave lens. Fabrication of laser annealed cells using both modes is forthcoming.

    4. Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

      SciTech Connect (OSTI)

      Andrieu, S. Bonell, F.; Hauet, T.; Montaigne, F.; Lefevre, P.; Bertran, F.

      2014-05-07

      The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe{sub 1?x}V{sub x} electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe{sub 1?X}Co{sub x}/MgO/Fe{sub 1?X}Co{sub x} (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty ?1 minority spin state towards the Fermi level.

    5. Long-term surveillance plan for the Cheney disposal site near Grand Junction, Colorado

      SciTech Connect (OSTI)

      NONE

      1997-04-01

      This long-term surveillance plan (LTSP) describes the U.S. Department of Energy`s (DOE) long-term care program for the Uranium Mill Tailings Remedial Action (UMTRA) Project Cheney disposal site. The site is in Mesa County near Grand Junction, Colorado. The U.S. Nuclear Regulatory Commission (NRC) has developed regulations for the issuance of a general license for the custody and long-term care of UMTRA Project disposal sites in 10 CFR Part 40. The purpose of this general license is to ensure that the UMTRA Project disposal sites are cared for in a manner that protects public health and safety and the environment. Before each disposal site may be licensed, the NRC requires the DOE to submit a site-specific LTSP. The DOE prepared this LTSP to meet this requirement for the Cheney disposal site. The general license becomes effective when the NRC concurs with the DOE`s determination that remedial action is complete and the NRC formally accepts this plan. This document describes the long-term surveillance program the DOE will implement to ensure that the Cheney disposal site performs as designed. The program is based on site inspections to identify potential threats to disposal cell integrity. The LTSP is based on the UMTRA Project long-term surveillance program guidance and meets the requirements of 10 CFR {section}40.27(b) and 40 CFR {section}192.03.

    6. Plasma Separation Process: Betacell (BCELL) code: User's manual. [Bipolar barrier junction

      SciTech Connect (OSTI)

      Taherzadeh, M.

      1987-11-13

      The emergence of clearly defined applications for (small or large) amounts of long-life and reliable power sources has given the design and production of betavoltaic systems a new life. Moreover, because of the availability of the plasma separation program, (PSP) at TRW, it is now possible to separate the most desirable radioisotopes for betacell power generating devices. A computer code, named BCELL, has been developed to model the betavoltaic concept by utilizing the available up-to-date source/cell parameters. In this program, attempts have been made to determine the betacell energy device maximum efficiency, degradation due to the emitting source radiation and source/cell lifetime power reduction processes. Additionally, comparison is made between the Schottky and PN junction devices for betacell battery design purposes. Certain computer code runs have been made to determine the JV distribution function and the upper limit of the betacell generated power for specified energy sources. A Ni beta emitting radioisotope was used for the energy source and certain semiconductors were used for the converter subsystem of the betacell system. Some results for a Promethium source are also given here for comparison. 16 refs.

    7. InGaAsN/GaAs heterojunction for multi-junction solar cells

      DOE Patents [OSTI]

      Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

      2001-01-01

      An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

    8. Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions

      SciTech Connect (OSTI)

      Jeong, J. H.; Endoh, T.; Kim, Y.; Kim, W. K.; Park, S. O.

      2014-05-07

      To identify the degradation mechanism in magnetic tunnel junctions (MTJs) using hydrogen, the properties of the MTJs were measured by applying an additional hydrogen etch process and a hydrogen plasma process to the patterned MTJs. In these studies, an additional 50?s hydrogen etch process caused the magnetoresistance (MR) to decrease from 103% to 14.7% and the resistance (R) to increase from 6.5?k? to 39?k?. Moreover, an additional 500?s hydrogen plasma process decreased the MR from 103% to 74% and increased R from 6.5?k? to 13.9?k?. These results show that MTJs can be damaged by the hydrogen plasma process as well as by the hydrogen etch process, as the atomic bonds in MgO may break and react with the exposed hydrogen gas. Compounds such as MgO hydrate very easily. We also calculated the damaged layer width (DLW) of the patterned MTJs after the hydrogen etching and plasma processes, to evaluate the downscaling limitations of spin-transfer-torque magnetic random-access memory (STT-MRAM) devices. With these calculations, the maximum DLWs at each side of the MTJ, generated by the etching and plasma processes, were 23.8?nm and 12.8?nm, respectively. This result validates that the hydrogen-based MTJ patterning processes cannot be used exclusively in STT-MRAMs beyond 20?nm.

    9. Nonlinear vs. bolometric radiation response and phonon thermal conductance in graphene-superconductor junctions

      SciTech Connect (OSTI)

      Vora, Heli; Nielsen, Bent; Du, Xu [Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York (United States)

      2014-02-21

      Graphene is a promising candidate for building fast and ultra-sensitive bolometric detectors due to its weak electron-phonon coupling and low heat capacity. In order to realize a practical graphene-based bolometer, several important issues, including the nature of radiation response, coupling efficiency to the radiation and the thermal conductance need to be carefully studied. Addressing these issues, we present graphene-superconductor junctions as a viable option to achieve efficient and sensitive bolometers, with the superconductor contacts serving as hot electron barriers. For a graphene-superconductor device with highly transparent interfaces, the resistance readout in the presence of radio frequency radiation is dominated by non-linear response. On the other hand, a graphene-superconductor tunnel device shows dominantly bolometric response to radiation. For graphene devices fabricated on SiO{sub 2} substrates, we confirm recent theoretical predictions of T{sup 2} temperature dependence of phonon thermal conductance in the presence of disorder in the graphene channel at low temperatures.

    10. The tight junction protein Z O-2 has several functional nuclear export signals

      SciTech Connect (OSTI)

      Gonzalez-Mariscal, Lorenza [Department of Physiology, Biophysics and Neuroscience, Center for Research and Advanced Studies (CINVESTAV), Ave. Instituto Politecnico Nacional 2508, Mexico, D.F., 07360 (Mexico)]. E-mail: lorenza@fisio.cinvestav.mx; Ponce, Arturo [Department of Physiology, Biophysics and Neuroscience, Center for Research and Advanced Studies (CINVESTAV), Ave. Instituto Politecnico Nacional 2508, Mexico, D.F., 07360 (Mexico); Alarcon, Lourdes [Department of Physiology, Biophysics and Neuroscience, Center for Research and Advanced Studies (CINVESTAV), Ave. Instituto Politecnico Nacional 2508, Mexico, D.F., 07360 (Mexico); Jaramillo, Blanca Estela [Department of Physiology, Biophysics and Neuroscience, Center for Research and Advanced Studies (CINVESTAV), Ave. Instituto Politecnico Nacional 2508, Mexico, D.F., 07360 (Mexico)

      2006-10-15

      The tight junction (TJ) protein ZO-2 changes its subcellular distribution according to the state of confluency of the culture. Thus in confluent monolayers, it localizes at the TJ region whereas in sparse cultures it concentrates at the nucleus. The canine sequence of ZO-2 displays four putative nuclear export signals (NES), two at the second PDZ domain (NES-0 and NES-1) and the rest at the GK region (NES-2 and NES-3). The functionality of NES-0 and NES-3 was unknown, hence here we have explored it with a nuclear export assay, injecting into the nucleus of MDCK cells peptides corresponding to the ZO-2 NES sequences chemically coupled to ovalbumin. We show that both NES-0 and NES-3 are functional and sensitive to leptomycin B. We also demonstrate that NES-1, previously characterized as a non functional NES, is rendered capable of nuclear export upon the acquisition of a negative charge at its Ser369 residue. Experiments performed injecting at the nucleus WT and mutated ZO-2-GST fusion proteins revealed the need of both NES-0 and NES-1, and NES-2 and NES-3 for attaining an efficient nuclear exit of the respective amino and middle segments of ZO-2. Moreover, the transfection of MDCK cells with full-length ZO-2 revealed that the mutation of any of the NES present in the molecule was sufficient to induce nuclear accumulation of the protein.

    11. Examination of a Junction-Box Adhesion Test for Use in Photovoltaic Module Qualification: Preprint

      SciTech Connect (OSTI)

      Miller, D. C.; Wohlgemuth, J. H.

      2012-08-01

      Engineering robust adhesion of the junction-box (j-box) is a hurdle typically encountered by photovoltaic (PV) module manufacturers during product development. There are historical incidences of adverse effects (e.g., fires) caused when the j-box/adhesive/module system has failed in the field. The addition of a weight to the j-box during the 'damp heat' IEC qualification test is proposed to verify the basic robustness of its adhesion system. The details of the proposed test will be described, in addition to the preliminary results obtained using representative materials and components. The described discovery experiments examine moisture-cured silicone, foam tape, and hot-melt adhesives used in conjunction with PET or glass module 'substrates.' To be able to interpret the results, a set of material-level characterizations was performed, including thermogravimetric analysis, differential scanning calorimetry, and dynamic mechanical analysis. PV j-boxes were adhered to a substrate, loaded with a prescribed weight, and then placed inside an environmental chamber (at 85C, 85% relative humidity). Some systems did not remain attached through the discovery experiments. Observed failure modes include delamination (at the j-box/adhesive or adhesive/substrate interface) and phase change/creep. The results are discussed in the context of the application requirements, in addition to the plan for the formal experiment supporting the proposed modification to the qualification test.

    12. Exact half-BPS string-junction solutions in six-dimensional supergravity

      E-Print Network [OSTI]

      Chiodaroli, Marco; Guo, Yu; Gutperle, Michael

      2011-01-01

      We construct SO(2,1) x SO(3)-invariant half-BPS solutions in six-dimensional (0,4) supergravity with m tensor multiplets. The space-time manifold of each one of these solutions consists of an AdS_2 x S^2 warped over a Riemann surface Sigma with boundary. The most general local solution is parametrized by one real harmonic function, and m+2 holomorphic functions which are subject to a quadratic constraint and a hermitian inequality, both of which are manifestly SO(2,m) invariant. Imposing suitable conditions on these harmonic and holomorphic functions, we construct globally regular supergravity solutions with N distinct AdS_3 x S^3 asymptotic regions and contractible Sigma. These solutions have an intricate moduli space, whose dimension equals 2(m+1)N -m-2 and matches the counting of three-form charge vectors and un-attracted scalars of the tensor multiplet. Exact explicit formulas for all supergravity fields are obtained in terms of the moduli. Our solutions give the near-horizon geometries for junctions of N...

    13. Interplay between interband coupling and ferromagnetism in iron pnictide superconductor/ferromagnet/iron pnictide superconductor junctions

      SciTech Connect (OSTI)

      Liu, S. Y.; Tao, Y. C.; Hu, J. G.

      2014-08-28

      An extended eight-component Bogoliubov-de Gennes equation is applied to study the Josephson effect between iron-based superconductors (SCs) with s{sub ±}-wave pairing symmetry, separated by an ferromagnet (FM). The feature of damped oscillations of critical Josephson current as a function of FM thickness, the split of the peaks induced by the interband coupling is much different from that for the junction with the s{sub ±}-wave SCs replaced by s{sub ++}-wave ones. In particular, a 0?? transition as a function of interband coupling strength ? is found to always exhibit with the corresponding dip shifting toward the larger ? due to enhancing the spin polarization in the FM, while there exits no 0?? transition for the SC with s{sub ++}-wave pairing symmetry. The two features can be used to identify the pairing symmetry in the iron pnictide SC different from the s{sub ++}-wave one in MgB{sub 2}. Experimentally, by adjusting the doping level in the s{sub ±}-wave SCs, one can vary ?.

    14. Cluster-formation in the Rosette molecular cloud at the junctions of filaments

      E-Print Network [OSTI]

      Schneider, N; Hennemann, M; Motte, F; Didelon, P; Federrath, C; Bontemps, S; Di Francesco, J; Arzoumanian, D; Minier, V; André, Ph; Hill, T; Zavagno, A; Nguyen-Luong, Q; Attard, M; Bernard, J -Ph; Elia, D; Fallscheer, C; Griffin, M; Kirk, J; Klessen, R; Könyves, V; Martin, P; Men'shchikov, A; Palmeirim, P; Peretto, N; Pestalozzi, M; Russeil, D; Sadavoy, S; Sousbie, T; Testi, L; Tremblin, P; Ward-Thompson, D; White, G

      2012-01-01

      For many years feedback processes generated by OB-stars in molecular clouds, including expanding ionization fronts, stellar winds, or UV-radiation, have been proposed to trigger subsequent star formation. However, hydrodynamic models including radiation and gravity show that UV-illumination has little or no impact on the global dynamical evolution of the cloud. The Rosette molecular cloud, irradiated by the NGC2244 cluster, is a template region for triggered star-formation, and we investigated its spatial and density structure by applying a curvelet analysis, a filament-tracing algorithm (DisPerSE), and probability density functions (PDFs) on Herschel column density maps, obtained within the HOBYS key program. The analysis reveals not only the filamentary structure of the cloud but also that all known infrared clusters except one lie at junctions of filaments, as predicted by turbulence simulations. The PDFs of sub-regions in the cloud show systematic differences. The two UV-exposed regions have a double-peak...

    15. Bottom head to shell junction assembly for a boiling water nuclear reactor

      DOE Patents [OSTI]

      Fife, A.B.; Ballas, G.J.

      1998-02-24

      A bottom head to shell junction assembly which, in one embodiment, includes an annular forging having an integrally formed pump deck and shroud support is described. In the one embodiment, the annular forging also includes a top, cylindrical shaped end configured to be welded to one end of the pressure vessel cylindrical shell and a bottom, conical shaped end configured to be welded to the disk shaped bottom head. Reactor internal pump nozzles also are integrally formed in the annular forging. The nozzles do not include any internal or external projections. Stubs are formed in each nozzle opening to facilitate welding a pump housing to the forging. Also, an upper portion of each nozzle opening is configured to receive a portion of a diffuser coupled to a pump shaft which extends through the nozzle opening. Diffuser openings are formed in the integral pump deck to provide additional support for the pump impellers. The diffuser opening is sized so that a pump impeller can extend at least partially therethrough. The pump impeller is connected to the pump shaft which extends through the nozzle opening. 5 figs.

    16. Bottom head to shell junction assembly for a boiling water nuclear reactor

      DOE Patents [OSTI]

      Fife, Alex Blair (San Jose, CA); Ballas, Gary J. (San Jose, CA)

      1998-01-01

      A bottom head to shell junction assembly which, in one embodiment, includes an annular forging having an integrally formed pump deck and shroud support is described. In the one embodiment, the annular forging also includes a top, cylindrical shaped end configured to be welded to one end of the pressure vessel cylindrical shell and a bottom, conical shaped end configured to be welded to the disk shaped bottom head. Reactor internal pump nozzles also are integrally formed in the annular forging. The nozzles do not include any internal or external projections. Stubs are formed in each nozzle opening to facilitate welding a pump housing to the forging. Also, an upper portion of each nozzle opening is configured to receive a portion of a diffuser coupled to a pump shaft which extends through the nozzle opening. Diffuser openings are formed in the integral pump deck to provide additional support for the pump impellers. The diffuser opening is sized so that a pump impeller can extend at least partially therethrough. The pump impeller is connected to the pump shaft which extends through the nozzle opening.

    17. Trial Run of a Junction-Box Attachment Test for Use in Photovoltaic Module Qualification (Presentation)

      SciTech Connect (OSTI)

      Miller, D.; Deibert, S.; Wohlgemuth, J.

      2014-06-01

      Engineering robust adhesion of the junction-box (j-box) is a hurdle typically encountered by photovoltaic (PV) module manufacturers during product development and manufacturing process control. There are historical incidences of adverse effects (e.g., fires), caused when the j-box/adhesive/module system has failed in the field. The addition of a weight to the j-box during the 'damp-heat', 'thermal-cycle', or 'creep' tests within the IEC qualification protocol is proposed to verify the basic robustness of the adhesion system. The details of the proposed test are described, in addition to a trial run of the test procedure. The described experiments examine 4 moisture-cured silicones, 4 foam tapes, and a hot-melt adhesive used in conjunction with glass, KPE, THV, and TPE substrates. For the purpose of validating the experiment, j-boxes were adhered to a substrate, loaded with a prescribed weight, and then subjected to aging. The replicate mock-modules were aged in an environmental chamber (at 85 deg C/85% relative humidity for 1000 hours; then 100 degrees C/<10% relative humidity for 200 hours) or fielded in Golden, Miami, and Phoenix for 1 year. Attachment strength tests, including pluck and shear test geometries, were also performed on smaller component specimens.

    18. SU-E-T-226: Junction Free Craniospinal Irradiation in Linear Accelerator Using Volumetric Modulated Arc Therapy : A Novel Technique Using Dose Tapering

      SciTech Connect (OSTI)

      Sarkar, B; Roy, S; Paul, S; Munshi, A; Roy, Shilpi; Jassal, K; Ganesh, T; Mohanti, BK

      2014-06-01

      Purpose: Spatially separated fields are required for craniospinal irradiation due to field size limitation in linear accelerator. Field junction shits are conventionally done to avoid hot or cold spots. Our study was aimed to demonstrate the feasibility of junction free irradiation plan of craniospinal irradiation (CSI) for Meduloblastoma cases treated in linear accelerator using Volumetric modulated arc therapy (VMAT) technique. Methods: VMAT was planned using multiple isocenters in Monaco V 3.3.0 and delivered in Elekta Synergy linear accelerator. A full arc brain and 40° posterior arc spine fields were planned using two isocentre for short (<1.3 meter height ) and 3 isocentres for taller patients. Unrestricted jaw movement was used in superior-inferior direction. Prescribed dose to PTV was achieved by partial contribution from adjacent beams. A very low dose gradient was generated to taper the isodoses over a long length (>10 cm) at the conventional field junction. Results: In this primary study five patients were planned and three patients were delivered using this novel technique. As the dose contribution from the adjacent beams were varied (gradient) to create a complete dose distribution, therefore there is no specific junction exists in the plan. The junction were extended from 10–14 cm depending on treatment plan. Dose gradient were 9.6±2.3% per cm for brain and 7.9±1.7 % per cm for spine field respectively. Dose delivery error due to positional inaccuracy was calculated for brain and spine field for ±1mm, ±2mm, ±3mm and ±5 mm were 1%–0.8%, 2%–1.6%, 2.8%–2.4% and 4.3%–4% respectively. Conclusion: Dose tapering in junction free CSI do not require a junction shift. Therefore daily imaging for all the field is also not essential. Due to inverse planning dose to organ at risk like thyroid kidney, heart and testis can be reduced significantly. VMAT gives a quicker delivery than Step and shoot or dynamic IMRT.

    19. Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

      SciTech Connect (OSTI)

      Wang, Shouguo; Ward, R. C. C.; Zhang, Xiaoguang; Kohn, A.; Ma, Q. L.; Zhang, J.; Liu, H. F.; Han, Prof. X. F.

      2012-01-01

      Following predictions by first-principles theory of huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), measured magnetoresistance (MR) ratio about 200% at room temperature (RT) have been reported in MgO-based epitaxial MTJs. Recently, MR ratio of about 600% has been reported at RT in MgO-based amorphous MTJs with core structure of CoFeB/MgO/CoFeB grown by magnetron sputtering with amorphous CoFeB layers. The sputtered CoFeB/MgO/CoFeB MTJs shows a great potential application in spintronic devices. Although epitaxial structure will probably not be used in devices, it remains an excellent model system to compare theoretical calculations with experimental results and to enhance our understanding of the spin dependent tunneling. Both theoretical calculations and experimental results clearly indicate that the interfacial structure plays a crucial role on coherent tunneling across single crystalMgO barrier, especially in epitaxial MgO-based MTJs grown by molecular beam epitaxy (MBE). Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism have been used for interface characterization. However, no consistent viewpoint has been reached, and this is still an open issue. In this article, recent studies on the interface characterization in MgO-based epitaxial MTJs will be introduced, with a focus on research by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and spin dependent tunneling spectroscopy.

    20. Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

      SciTech Connect (OSTI)

      Yin, Y. W.; Raju, M.; Li, Qi; Hu, W. J.; Burton, J. D.; Gruverman, A.; Tsymbal, E. Y.; Kim, Y.-M.; Borisevich, A. Y.; Pennycook, S. J.; Yang, S. M.; Noh, T. W.; Li, X. G.; Zhang, Z. D.

      2015-05-07

      As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO{sub 3}/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3}/La{sub 0.5}Ca{sub 0.5}MnO{sub 3} /La{sub 0.7}Sr{sub 0.3}MnO{sub 3} MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO{sub 3} is ferroelectric and La{sub 0.5}Ca{sub 0.5}MnO{sub 3} is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

    1. Electromagnetic model for near-field microwave microscope with atomic resolution: Determination of tunnel junction impedance

      SciTech Connect (OSTI)

      Reznik, Alexander N.

      2014-08-25

      An electrodynamic model is proposed for the tunneling microwave microscope with subnanometer space resolution as developed by Lee et al. [Appl. Phys. Lett. 97, 183111 (2010)]. Tip-sample impedance Z{sub a} was introduced and studied in the tunneling and non-tunneling regimes. At tunneling breakdown, the microwave current between probe and sample flows along two parallel channels characterized by impedances Z{sub p} and Z{sub t} that add up to form overall impedance Z{sub a}. Quantity Z{sub p} is the capacitive impedance determined by the near field of the probe and Z{sub t} is the impedance of the tunnel junction. By taking into account the distance dependences of effective tip radius r{sub 0}(z) and tunnel resistance R{sub t}(z)?=?Re[Z{sub t}(z)], we were able to explain the experimentally observed dependences of resonance frequency f{sub r}(z) and quality factor Q{sub L}(z) of the microscope. The obtained microwave resistance R{sub t}(z) and direct current tunnel resistance R{sub t}{sup dc}(z) exhibit qualitatively similar behavior, although being largely different in both magnitude and the characteristic scale of height dependence. Interpretation of the microwave images of the atomic structure of test samples proved possible by taking into account the inductive component of tunnel impedance ImZ{sub t}?=??L{sub t}. Relation ?L{sub t}/R{sub t}???0.235 was obtained.

    2. Anomalous junctions characterized by Raman spectroscopy in Si{sub x}Ge{sub 1?x} nanowires with axially degraded components

      SciTech Connect (OSTI)

      Xia, Minggang, E-mail: xiamg@mail.xjtu.edu.cn [Laboratory of Nanostructure and Physics Properties, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 (China); Department of Optical Information Science and Technology, School of Science, Xi'an Jiaotong University, 710049 (China); Han, Jinyun; Cheng, Zhaofang; Liang, Chunping; Zhang, Shengli [Laboratory of Nanostructure and Physics Properties, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 (China); Department of Applied Physics, School of Science, Xi'an Jiaotong University, Shaanxi 710049 (China)

      2014-09-08

      The characterization of junctions in nanowires by high-resolution transmission electron microscopy with spherical aberration correction is tricky and tedious. Many disadvantages also exist, including rigorous sample preparation and structural damage inflicted by high-energy electrons. In this work, we present a simple, low-cost, and non-destructive Raman spectroscopy method of characterizing anomalous junctions in nanowires with axially degraded components. The Raman spectra of Si{sub x}Ge{sub 1?x} nanowires with axially degraded components are studied in detail using a confocal micro-Raman spectrometer. Three Raman peaks (?{sub Si–Si}?=?490?cm{sup ?1}, ?{sub Si–Ge}?=?400?cm{sup ?1}, and ?{sub Ge–Ge}?=?284?cm{sup ?1}) up-shift with increased Si content. This up-shift originates in the bond compression induced by a confined effect on the radial direction of nanowire. The anomalous junctions in Si{sub x}Ge{sub 1?x} nanowires with axially degraded components are then observed by Raman spectroscopy and verified by transmission electron microscopy energy-dispersive X-ray spectroscopy. The anomalous junctions of Si{sub x}Ge{sub 1?x} nanowires with axially degraded components are due to the vortex flow of inlet SiH{sub 4} and GeH{sub 4} gas in their synthesis. The anomalous junctions can be used as raw materials for fabricating devices with special functions.

    3. Effect of CoFe insertion in Co{sub 2}MnSi/CoFe/n-GaAs junctions on spin injection properties

      SciTech Connect (OSTI)

      Ebina, Yuya; Akiho, Takafumi; Liu, Hong-xi; Yamamoto, Masafumi; Uemura, Tetsuya, E-mail: uemura@ist.hokudai.ac.jp [Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814 (Japan)

      2014-04-28

      The CoFe thickness (t{sub CoFe}) dependence of spin injection efficiency was investigated for Co{sub 2}MnSi/CoFe/n-GaAs junctions. The ?V{sub NL}/I value, which is a measure of spin injection efficiency, strongly depended on t{sub CoFe}, where ?V{sub NL} is the amplitude of a nonlocal spin-valve signal, and I is an injection current. Importantly, the maximum value of ?V{sub NL}/I for a Co{sub 2}MnSi/CoFe/n-GaAs junction was one order of magnitude higher than that for a CoFe/n-GaAs junction, indicating that a Co{sub 2}MnSi electrode works as a highly polarized spin source. No clear spin signal, on the other hand, was observed for a Co{sub 2}MnSi/n-GaAs junction due to diffusion of Mn atoms into the GaAs channel. Secondary ion mass spectrometry analysis indicated that the CoFe insertion effectively suppressed the diffusion of Mn into GaAs, resulting in improved spin injection properties compared with those for a Co{sub 2}MnSi/n-GaAs junction.

    4. Heterocellular interaction enhances recruitment of {alpha} and {beta}-catenins and ZO-2 into functional gap-junction complexes and induces gap junction-dependant differentiation of mammary epithelial cells

      SciTech Connect (OSTI)

      Talhouk, Rabih S. [Department of Biology, Faculty of Arts and Sciences, American University of Beirut, Beirut (Lebanon)], E-mail: rtalhouk@aub.edu.lb; Mroue, Rana; Mokalled, Mayssa; Abi-Mosleh, Lina; Nehme, Ralda; Ismail, Ayman; Khalil, Antoine [Department of Biology, Faculty of Arts and Sciences, American University of Beirut, Beirut (Lebanon); Zaatari, Mira [Department of Human Morphology, Faculty of Medicine, American University of Beirut, Beirut (Lebanon); El-Sabban, Marwan E. [Department of Human Morphology, Faculty of Medicine, American University of Beirut, Beirut (Lebanon)], E-mail: me00@aub.edu.lb

      2008-11-01

      Gap junctions (GJ) are required for mammary epithelial differentiation. Using epithelial (SCp2) and myoepithelial-like (SCg6) mouse-derived mammary cells, the role of heterocellular interaction in assembly of GJ complexes and functional differentiation ({beta}-casein expression) was evaluated. Heterocellular interaction is critical for {beta}-casein expression, independent of exogenous basement membrane or cell anchoring substrata. Functional differentiation of SCp2, co-cultured with SCg6, is more sensitive to GJ inhibition relative to homocellular SCp2 cultures differentiated by exogenous basement membrane. Connexin (Cx)32 and Cx43 levels were not regulated across culture conditions; however, GJ functionality was enhanced under differentiation-permissive conditions. Immunoprecipitation studies demonstrated association of junctional complex components ({alpha}-catenin, {beta}-catenin and ZO-2) with Cx32 and Cx43, in differentiation conditions, and additionally with Cx30 in heterocellular cultures. Although {beta}-catenin did not shuttle between cadherin and GJ complexes, increased association between connexins and {beta}-catenin in heterocellular cultures was observed. This was concomitant with reduced nuclear {beta}-catenin, suggesting that differentiation in heterocellular cultures involves sequestration of {beta}-catenin in GJ complexes.

    5. Analysis of different tunneling mechanisms of In{sub x}Ga{sub 1?x}As/AlGaAs tunnel junction light-emitting transistors

      SciTech Connect (OSTI)

      Wu, Cheng-Han; Wu, Chao-Hsin

      2014-10-27

      The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x?=?5% and 2.5%) of the In{sub x}Ga{sub 1?x}As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

    6. Properties of Josephson junctions involving the cos(kx)cos(ky) pairing state in iron pnictides Wei-Feng Tsai,1 Dao-Xin Yao,1 B. Andrei Bernevig,2 and JiangPing Hu1

      E-Print Network [OSTI]

      Hu, Jiangping

      Properties of Josephson junctions involving the cos(kx)·cos(ky) pairing state in iron pnictides Wei; published 30 July 2009 We propose a trilayer -junction that takes advantage of the unconventional sx2y2 =cos kx cos ky pairing symmetry which changes sign between electron and hole Fermi pockets in the iron

    7. MANUFACTURING OF TRIPLE-JUNCTION 4 fe a-Si ALLOY PV MODULES M. Izu, X. Deng, A. Krisko, K. Whelan, R. Young, II. C. G-&n&y, K. L. Namsimhan and S. R. Gvshinsky

      E-Print Network [OSTI]

      Deng, Xunming

      MANUFACTURING OF TRIPLE-JUNCTION 4 fe a-Si ALLOY PV MODULES M. Izu, X. Deng, A. Krisko, K. Whelan West Maple Road, Troy, MI 48084 ABSTRACT Spectrum splitting, triple-junction a-Si alloy 4 f? PV modules *. These PV modules provide 9.5% initial and 8.0% stable conversion efficiencies, the highest reported values

    8. Signatures of Klein tunneling in disordered graphene p-n-p junctions E. Rossi,1 J. H. Bardarson,2 P. W. Brouwer,2,3 and S. Das Sarma1

      E-Print Network [OSTI]

      Rossi, Enrico

      disorder and quantum-mechanical trans- port. The physics of the p-n-p junction is governed by "KleinSignatures of Klein tunneling in disordered graphene p-n-p junctions E. Rossi,1 J. H. Bardarson,2 P that uniquely combines three crucial features: microscopic treatment of charge disorder, fully quantum

    9. GaAs Nanowire Array Solar Cells with Axial p-i-n Junctions Maoqing Yao, Ningfeng Huang, Sen Cong, Chun-Yung Chi, M. Ashkan Seyedi, Yen-Ting Lin, Yu Cao,

      E-Print Network [OSTI]

      Zhou, Chongwu

      into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7-Queisser efficiency limit is to use multijunction solar cells containing several p-n junctions in series.22-26 Each multijunction solar cells consist of sequentially stacked thin films. The lattice constants of the materials

    10. Effects of viscoelasticity on droplet dynamics and break-up in microfluidic T-Junctions: a lattice Boltzmann study

      E-Print Network [OSTI]

      Gupta, Anupam

      2015-01-01

      The effects of viscoelasticity on the dynamics and break-up of fluid threads in microfluidic T-junctions are investigated using numerical simulations of dilute polymer solutions at changing the Capillary number ($\\mbox {Ca}$), i.e. at changing the balance between the viscous forces and the surface tension at the interface, up to $\\mbox{Ca} \\approx 3 \\times 10^{-2}$. A Navier-Stokes (NS) description of the solvent based on the lattice Boltzmann models (LBM) is here coupled to constitutive equations for finite extensible non-linear elastic dumbbells with the closure proposed by Peterlin (FENE-P model). We present the results of three-dimensional simulations in a range of $\\mbox{Ca}$ which is broad enough to characterize all the three characteristic mechanisms of breakup in the confined T-junction, i.e. ${\\it squeezing}$, ${\\it dripping}$ and ${\\it jetting}$ regimes. The various model parameters of the FENE-P constitutive equations, including the polymer relaxation time $\\tau_P$ and the finite extensibility para...

    11. Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells

      SciTech Connect (OSTI)

      Khatri, I.; Tang, Z.; Hiate, T.; Liu, Q.; Ishikawa, R.; Ueno, K.; Shirai, H.

      2013-12-21

      We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm{sup 2}/V s for the 12–15?wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15?wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 2–3?nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.

    12. High 400?°C operation temperature blue spectrum concentration solar junction in GaInN/GaN

      SciTech Connect (OSTI)

      Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

      2014-12-15

      Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?°C. Even at 400?°C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

    13. Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

      DOE Patents [OSTI]

      Wood, Richard F. (Oak Ridge, TN); Young, Rosa T. (Farragut, TN)

      1984-01-01

      The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.

    14. Comparison of junction temperature evaluations in a power IGBT module using an IR camera and three thermo-sensitive electrical parameters

      E-Print Network [OSTI]

      and electrical methods. The main optical methods are local infrared sensors [3,4], optical fibers [5], infraredComparison of junction temperature evaluations in a power IGBT module using an IR camera and three information of the actual chip temperature distribution. In this paper, we propose to use infrared (IR

    15. Superconductlng InGaAs junction field...effect transistors with Nb electrodes A. W. Kleinsasser, T. N. Jackson, D. Mcinturff, F. Rammo, G. D. Pettit,

      E-Print Network [OSTI]

      Woodall, Jerry M.

      is set by the normal coherence length ofthe semiconductor, and (2) the superconductor-semicon- ductorSuperconductlng InGaAs junction field...effect transistors with Nb electrodes A. W. Kleinsasser, T for publication 21 August 1989) We describe the design, fabrication, and characterization of superconducting 1n0

    16. The Ca2+-releaseChannelJRyanodineReceptor Is Localized in Junctional and Corbular SarcoplasmicReticulum in CardiacMuscle

      E-Print Network [OSTI]

      Campbell, Kevin P.

      , and peripheral junctional SR, and the corbular SR (Sommer and Johnson, 1979;Forbes and Sperelakis, 1983Reticulum in CardiacMuscle Annelise0.Jorgensen,*Amy C.X. Shen,*WayneArnold,*Peter S.McPherson,+andKevinP. Campbell

    17. Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy

      E-Print Network [OSTI]

      Yu, Edward T.

      in III-V semiconductors J. Appl. Phys. 111, 103706 (2012) Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures Appl. Phys. Lett. 100, 152116 (2012) Free carrier studies of macroscopic tunnel junctions. VC 2012 American Institute of Physics. [http://dx.doi.org/10

    18. arXiv:0710.2150v1[cond-mat.mes-hall]11Oct2007 Disordered p-n junction in graphene

      E-Print Network [OSTI]

      Fogler, Michael

      properties [1]. A monolayer graphene is a gapless two-dimensional (2D) semiconductor with a massless electronarXiv:0710.2150v1[cond-mat.mes-hall]11Oct2007 Disordered p-n junction in graphene M. M. Fogler,1 L, Minneapolis, Minnesota 55455 (Dated: October 11, 2007) We evaluate the resistance of a gate-tunable graphene p

    19. arXiv:0708.0892v2[cond-mat.mes-hall]11Aug2007 Nonlinear screening and ballistic transport in a graphene p-n junction

      E-Print Network [OSTI]

      Fogler, Michael

      research and a promising source of new technology [1]. A monolayer graphene is a gapless two-dimensional (2D) semiconductor whose quasiparti- cles (electrons and holes) move with a constant speed of v 106 m in a graphene p-n junction L. M. Zhang and M. M. Fogler Department of Physics, University of California San

    20. The Role of the TM2-HAMP Junction in Control of the Signaling State of the Aspartate Chemoreceptor of E. coli 

      E-Print Network [OSTI]

      Wright, Gus Alan

      2010-10-12

      between residues Arg-214, at the end of TM2, and the conserved residue Pro-219, at the beginning of AS1 of the HAMP domain (the TM2-HAMP junction), is predicted to be able to form a helical extension of TM2. We hypothesized that perturbing the native...

    1. The thermoelectric properties of molecular junctions can now be investigated with scanning tunnelling microscopy. Such experiments provide insights into charge transport in single

      E-Print Network [OSTI]

      Walsworth, Ronald L.

      The thermoelectric properties of molecular junctions can now be investigated with scanning . They used a scanning tunnelling microscope (STM) to investigate thermoelectricity -- the voltage generated that thermoelectric measurements by STM provide a solution to this problem MOLECULAR ELECTRONICS Charges feel the heat

    2. Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions

      SciTech Connect (OSTI)

      Andreev, V. M.; Evstropov, V. V.; Kalinovsky, V. S. Lantratov, V. M.; Khvostikov, V. P.

      2009-05-15

      Dependence of the efficiency of single-junction and multijunction solar cells on the mechanisms of current flow in photoactive p-n junctions, specifically on the form of the dark current-voltage characteristic J-V, has been studied. The resistanceless J-V{sub j} characteristic (with the series resistance disregarded) of a multijunction solar cell has the same shape as the characteristic of a single-junction cell: both feature a set of exponential portions. This made it possible to develop a unified analytical method for calculating the efficiency of singlejunction and multijunction solar cells. The equation relating the efficiency to the photogenerated current at each portion of the J-V{sub j} characteristic is derived. For p-n junctions in GaAs and GaSb, the following characteristics were measured: the dark J-V characteristic, the dependence of the open-circuit voltage on the illumination intensity P-V{sub OC}, and the dependence of the luminescence intensity on the forward current L-J. Calculated dependences of potential efficiency (under idealized condition for equality to unity of external quantum yield) on the photogenerated current for single-junction GaAs and GaSb solar cells and a GaAs/GaSb tandem are plotted. The form of these dependences corresponds to the shape of J-V{sub j} characteristics: there are the diffusion- and recombination-related portions; in some cases, the tunneling-trapping portion is also observed. At low degrees of concentration of solar radiation (C < 10), an appreciable contribution to photogenerated current is made by recombination component. It is an increase in this component in the case of irradiation with 6.78-MeV protons or 1-MeV electrons that brings about a decrease in the efficiency of conversion of unconcentrated solar radiation.

    3. Interfacial spin-filter assisted spin transfer torque effect in Co/BeO/Co magnetic tunnel junction

      SciTech Connect (OSTI)

      Tang, Y.-H. Chu, F.-C.

      2015-03-07

      The first-principles calculation is employed to demonstrate the spin-selective transport properties and the non-collinear spin-transfer torque (STT) effect in the newly proposed Co/BeO/Co magnetic tunnel junction. The subtle spin-polarized charge transfer solely at O/Co interface gives rise to the interfacial spin-filter (ISF) effect, which can be simulated within the tight binding model to verify the general expression of STT. This allows us to predict the asymmetric bias behavior of non-collinear STT directly via the interplay between the first-principles calculated spin current densities in collinear magnetic configurations. We believe that the ISF effect, introduced by the combination between wurtzite-BeO barrier and the fcc-Co electrode, may open a new and promising route in semiconductor-based spintronics applications.

    4. Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current

      SciTech Connect (OSTI)

      Sakimura, N.; Nebashi, R.; Sugibayashi, T.; Natsui, M.; Hanyu, T.; Ohno, H.

      2014-05-07

      This paper describes the possibility of a switching upset of a magnetic tunnel junction (MTJ) caused by a terrestrial radiation-induced single-event-upset (SEU) current in spintronic integrated circuits. The current waveforms were simulated by using a 3-D device simulator in a basic circuit including MTJs designed using 90-nm CMOS parameters and design rules. The waveforms have a 400?-?A peak and a 200-ps elapsed time when neutron particles with a linear energy transfer value of 14?MeV cm{sup 2}/mg enter the silicon surface. The authors also found that the SEU current may cause soft errors with a probability of more than 10{sup ?12} per event, which was obtained by approximate solution of the ordinary differential equation of switching probability when the intrinsic critical current (I{sub C0}) became less than 30??A.

    5. Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes

      SciTech Connect (OSTI)

      Kurt, H.; Rode, K.; Oguz, K.; Coey, J. M. D. [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Boese, M.; Faulkner, C. C. [Advanced Microscopy Laboratory, CRANN, Trinity College, Dublin 2 (Ireland)

      2010-06-28

      Boron diffusion out of the CoFeB layers in model systems with thick CoFeB and MgO layers grown by radiofrequency sputtering or electron-beam evaporation and in MgO-based magnetic tunnel junctions (MTJs) is probed after annealing by x-ray photoemission spectroscopy (XPS) and electron energy loss spectroscopy. Successive interfaces are exposed by ion milling the stacks, layer by layer, in the XPS system. Despite the presence of thick CoFeB and a high annealing temperature of 400 deg. C, we found no boron in the MgO or at the MgO/CoFe interfaces. Similar results are also obtained in the MTJs.

    6. Effects of viscoelasticity on droplet dynamics and break-up in microfluidic T-Junctions: a lattice Boltzmann study

      E-Print Network [OSTI]

      Anupam Gupta; Mauro Sbragaglia

      2015-08-01

      The effects of viscoelasticity on the dynamics and break-up of fluid threads in microfluidic T-junctions are investigated using numerical simulations of dilute polymer solutions at changing the Capillary number ($\\mbox {Ca}$), i.e. at changing the balance between the viscous forces and the surface tension at the interface, up to $\\mbox{Ca} \\approx 3 \\times 10^{-2}$. A Navier-Stokes (NS) description of the solvent based on the lattice Boltzmann models (LBM) is here coupled to constitutive equations for finite extensible non-linear elastic dumbbells with the closure proposed by Peterlin (FENE-P model). We present the results of three-dimensional simulations in a range of $\\mbox{Ca}$ which is broad enough to characterize all the three characteristic mechanisms of breakup in the confined T-junction, i.e. ${\\it squeezing}$, ${\\it dripping}$ and ${\\it jetting}$ regimes. The various model parameters of the FENE-P constitutive equations, including the polymer relaxation time $\\tau_P$ and the finite extensibility parameter $L^2$, are changed to provide quantitative details on how the dynamics and break-up properties are affected by viscoelasticity. We will analyze cases with ${\\it Droplet ~Viscoelasticity}$ (DV), where viscoelastic properties are confined in the dispersed (d) phase, as well as cases with ${\\it Matrix ~Viscoelasticity}$ (MV), where viscoelastic properties are confined in the continuous (c) phase. Moderate flow-rate ratios $Q \\approx {\\cal O}(1)$ of the two phases are considered in the present study. Overall, we find that the effects are more pronounced in the case with MV, as the flow driving the break-up process upstream of the emerging thread can be sensibly perturbed by the polymer stresses.

    7. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

      SciTech Connect (OSTI)

      Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Zhang, Yong-Hang; Landini, Barbara; Campman, Ken

      2014-05-28

      This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300?nm thick GaAs absorber, combined with a 5??m thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00?V, short-circuit current densities (J{sub sc}) up to 24.5?mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6?mA/cm{sup 2} and 20.7%, respectively.

    8. Infrared detection with high-{Tc} bolometers and response of Nb tunnel junctions to picosecond voltage pulses

      SciTech Connect (OSTI)

      Verghese, S.

      1993-05-01

      Oxide superconductors with high critical temperature {Tc} make sensitive thermometers for several types of infrared bolometers. The authors built composite bolometers with YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thermometers on sapphire substrates which have higher sensitivity than competing thermal detectors which operate at temperatures above 77 K. A 1 x 1 mm bolometer with gold black serving as the radiation absorber has useful sensitivity for wavelengths 20--100 {mu}m. A 3 x 3 mm bolometer with a bismuth film as the absorber operates from 20--100 {mu}m. High-{Tc} bolometers which are fabricated with micromachining techniques on membranes of Si or Si{sub 3}N{sub 4} have potential application to large-format arrays which are used for infrared imaging. A nonisothermal high-{Tc} bolometer can be fabricated on a membrane of yttria-stabilized zirconia (YSZ) which is in thermal contact with the heat sink along the perimeter of the membrane. A thermal analysis indicates that the YSZ membrane bolometer can have improved sensitivity compared to the sapphire bolometer for spectrometer applications. The quasiparticle tunneling current in a superconductor-insulator-superconductor (SIS) junction is highly nonlinear in the applied voltage. The authors have made the first measurement of the linear response of the quasiparticle current in a Nb/AlO{sub x}/Nb junction over a broad bandwidth from 75--200 GHz. Nonlinear measurements made with these pulses may provide information about the quasiparticle lifetime. Preliminary data from such measurements are presented.

    9. Electrical and photovoltaic properties of CdTe/ZnTe n-i-p junctions grown by molecular beam epitaxy

      SciTech Connect (OSTI)

      Zielony, E., E-mail: eunika.zielony@pwr.edu.pl; P?aczek-Popko, E.; Racino, A.; Gumienny, Z. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Olender, K.; Wosi?ski, T.; Karczewski, G.; Chusnutdinow, S. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

      2014-06-28

      Preliminary studies have been performed on photoelectrical properties of CdTe/ZnTe n-i-p junctions grown using the molecular beam epitaxy technique. Photovoltaic properties of the cells have been investigated by the measurements of current-voltage (I-V) characteristics under 1-sun illumination. I-V characteristics yield efficiencies of the cells varying from 3.4% to 4.9%. The low efficiency can be due to the presence of electrically active defects. In order to study the origin of defects in CdTe/ZnTe photovoltaic junctions, space charge techniques (C-V and deep level transient spectroscopy (DLTS)) have been applied. From the C-V measurements, a doping profile was calculated confirming charge accumulation in the i-CdTe layer. The results of the DLTS studies revealed the presence of four traps within a temperature range from 77–420?K. Three of them with activation energies equal to 0.22 eV, 0.45?eV, and 0.78?eV have been ascribed to the hole traps present in the i-CdTe material and their possible origin has been discussed. The fourth, high-temperature DLTS peak observed at ?350?K has been attributed to extended defects as its amplitude and temperature position depends on the value of the filling pulse width. It is assumed that the defects related to the trap are either located in the i-CdTe layer or at the i-CdTe/ZnTe interface. However, it was found that the trap exhibits twofold nature: it behaves as a majority or as a minority trap, depending on the filling pulse height, which is a characteristic feature of recombination centers. This trap is presumably responsible for the low efficiency of the cells.

    10. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

      DOE Patents [OSTI]

      Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)

      2000-01-01

      Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

    11. High detection efficiency micro-structured solid-state neutron detector with extremely low leakage current fabricated with continuous p-n junction

      SciTech Connect (OSTI)

      Huang, Kuan-Chih; Lu, James J.-Q.; Bhat, Ishwara B.; Dahal, Rajendra; Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3522 ; Danon, Yaron

      2013-04-15

      We report the continuous p-n junction formation in honeycomb structured Si diode by in situ boron deposition and diffusion process using low pressure chemical vapor deposition for solid-state thermal neutron detection applications. Optimized diffusion temperature of 800 Degree-Sign C was obtained by current density-voltage characteristics for fabricated p{sup +}-n diodes. A very low leakage current density of {approx}2 Multiplication-Sign 10{sup -8} A/cm{sup 2} at -1 V was measured for enriched boron filled honeycomb structured neutron detector with a continuous p{sup +}-n junction. The neutron detection efficiency for a Maxwellian spectrum incident on the face of the detector was measured under zero bias voltage to be {approx}26%. These results are very encouraging for fabrication of large area solid-state neutron detector that could be a viable alternative to {sup 3}He tube based technology.

    12. A quantum chemical study from a molecular perspective: ionization and electron attachment energies for species often used to fabricate single-molecule junctions

      E-Print Network [OSTI]

      Baldea, Ioan

      2015-01-01

      The accurate determination of the lowest electron attachment ($EA$) and ionization ($IP$) energies for molecules embedded in molecular junctions is important for correctly estimating, \\emph{e.g.}, the magnitude of the currents ($I$) or the biases ($V$) where an $I-V$-curve exhibits a significant non-Ohmic behavior. Benchmark calculations for the lowest electron attachment and ionization energies of several typical molecules utilized to fabricate single-molecule junctions characterized by n-type conduction (4,4'-bipyridine, 1,4-dicyanobenzene, and 4,4'-dicyano-1,1'-biphenyl) and p-type conduction (benzenedithiol, biphenyldithiol, hexanemonothiol, and hexanedithiol] based on the EOM-CCSD (equation-of-motion coupled-cluster singles and doubles) state-of-the-art method of quantum chemistry are presented. They indicate significant differences from the results obtained within current approaches to molecular transport. The present study emphasizes that, in addition to a reliable quantum chemical method, basis sets m...

    13. Positive field-cooled dc susceptibility in granular superconductors interpreted through numerical simulations on a simple Josephson-junction-array model

      SciTech Connect (OSTI)

      Auletta, C.; Raiconi, G.; De Luca, R.; Pace, S.

      1995-05-01

      We have performed numerical simulations of a field-cooled dc susceptibility experiment carried out for granular superconductors by modeling these systems with a simple Josephson-junction array proposed by the authors. By this analysis the temperature dependence of the positive field-cooled susceptibility at very low values of the applied magnetic field, observed by Braunisch {ital et} {ital al}. [Phys. Rev. Lett. 68, 1908 (1992)] for some ceramic superonductors, has been reproduced and interpreted.

    14. Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80-300 K

      SciTech Connect (OSTI)

      Emel'yanov, A. M. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)], E-mail: Emelyanov@mail.ioffe.ru

      2008-11-15

      The edge electroluminescence spectra of silicon point-junction light-emitting diodes with a p-n junction area of 0.008 mm{sup 2} are studied at temperatures ranging from 80 to 300 K. Unprecedentedly high stability of the position of the spectral peak is observed at temperatures in the range between 130 and 300 K. The spectral characteristics of the light emitting diodes are studied at 80 K at different current densities up to 25 kA/cm{sup 2}. In contrast to the earlier reported data obtained at 300 K, the data obtained at 80 K do not show any noticeable Augerrecombination-related decrease in the quantum efficiency. From an analysis of the electroluminescence spectra at 80 K in a wide range of currents, it follows that radiative annihilation of free excitons is not a governing mechanism of electroluminescence in the entire emitting region in the base of the point-junction light-emitting diode at all currents used in the experiment.

    15. Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

      DOE Patents [OSTI]

      Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

      1999-01-01

      The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

    16. Work plan for phase 1A paleochannel studies at the Cheney disposal cell, Grand Junction, Colorado: Draft

      SciTech Connect (OSTI)

      1996-11-01

      This document will serve as a Work Plan for continuing paleochannel characterization activities at the Cheney disposal site near Grand Junction, Colorado. Elevated levels of nitrate were encountered in ground water from two monitor wells installed in alluvial paleochannels near the Cheney disposal cell in 1994. This triggered a series of investigations (Phase 1) designed to determine the source of nitrate and other chemical constituents in ground water at the site. A comprehensive summary of the Phase 1 field investigations (limited to passive monitoring and modeling studies) conducted by the Remedial Action Contractor (RAC) and Technical Assistance Contractor (TAC) to date is provided in Section 2.0 of this document. Results of Phase 1 were inconclusive regarding the potential interaction between the disposal cell and the paleochannels, so additional Phase 1A investigations are planned. Recommendations for Phase 1A tasks and possible future activities are discussed in Section 3.0. Detailed information on the implementation of the proposed Phase 1A tasks appears in Section 4.0 and will provide the basis for Statements of Work (SOW) for each of these tasks. A detailed sampling plan is provided to ensure quality and a consistency with previous data collection efforts.

    17. Trial-Run of a Junction-Box Attachment Test for Use in Photovoltaic Module Qualification: Preprint

      SciTech Connect (OSTI)

      Miller, D. C.; Deibert, S. L.; Wohlgemuth, J. H.

      2014-06-01

      Engineering robust adhesion of the junction box (j-box) is a hurdle typically encountered by photovoltaic module manufacturers during product development and manufacturing process control. There are historical incidences of adverse effects (e.g., fires) caused when the j-box/adhesive/module system has failed in the field. The addition of a weight to the j-box during the 'damp-heat,' 'thermal-cycle,' or 'creep' tests within the IEC qualification protocol is proposed to verify the basic robustness of the adhesion system. The details of the proposed test are described, in addition to a trial-run of the test procedure. The described experiments examine four moisture-cured silicones, four foam tapes, and a hot-melt adhesive used in conjunction with glass, KPE, THV, and TPE substrates. For the purpose of validating the experiment, j-boxes were adhered to a substrate, loaded with a prescribed weight, and then subjected to aging. The replicate mock-modules were aged in an environmental chamber (at 85 degrees C/85% relative humidity for 1000 hours; then 100 degrees C/<10% relative humidity for 200 hours) or fielded in Golden (CO), Miami (FL), and Phoenix (AZ) for one year. Attachment strength tests, including pluck and shear test geometries, were also performed on smaller component specimens.

    18. High Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology, Final Technical Report, 6 March 1998 - 15 October 2001

      SciTech Connect (OSTI)

      Guha, S.

      2001-11-08

      This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and high reliability. United Solar uses a spectrum-splitting, triple-junction cell structure. The top cell uses an amorphous silicon alloy of {approx}1.8-eV bandgap to absorb blue photons. The middle cell uses an amorphous silicon germanium alloy ({approx}20% germanium) of {approx}1.6-eV bandgap to capture green photons. The bottom cell has {approx}40% germanium to reduce the bandgap to {approx}1.4-eV to capture red photons. The cells are deposited on a stainless-steel substrate with a predeposited silver/zinc oxide back reflector to facilitate light-trapping. A thin layer of antireflection coating is applied to the top of the cell to reduce reflection loss. The major research activities conducted under this program were: (1) Fundamental studies to improve our understanding of materials and devices; the work included developing and analyzing a-Si alloy and a-SiGe alloy materials prepared near the threshold of amorphous-to-microcrystalline transition and studying solar cells fabricated using these materials. (2) Deposition of small-area cells using a radio-frequency technique to obtain higher deposition rates. (3) Deposition of small-area cells using a modified very high frequency technique to obtain higher deposition rates. (4) Large-area cell research to obtain the highest module efficiency. (5) Optimization of solar cells and modules fabricated using production parameters in a large-area reactor.

    19. Global Structure of a Three-Way Junction in a Phi29 Packaging RNA Dimer Determined Using Site-Directed Spin Labeling

      SciTech Connect (OSTI)

      Zhang, Xiaojun; Tung, Chang-Shung; Sowa, Glenna; Hatmal, Ma'mon M.; Haworth, Ian S.; Qin, Peter Z.

      2012-02-08

      The condensation of bacteriophage phi29 genomic DNA into its preformed procapsid requires the DNA packaging motor, which is the strongest known biological motor. The packaging motor is an intricate ring-shaped protein/RNA complex, and its function requires an RNA component called packaging RNA (pRNA). Current structural information on pRNA is limited, which hinders studies of motor function. Here, we used site-directed spin labeling to map the conformation of a pRNA three-way junction that bridges binding sites for the motor ATPase and the procapsid. The studies were carried out on a pRNA dimer, which is the simplest ring-shaped pRNA complex and serves as a functional intermediate during motor assembly. Using a nucleotide-independent labeling scheme, stable nitroxide radicals were attached to eight specific pRNA sites without perturbing RNA folding and dimer formation, and a total of 17 internitroxide distances spanning the three-way junction were measured using Double Electron-Electron Resonance spectroscopy. The measured distances, together with steric chemical constraints, were used to select 3662 viable three-way junction models from a pool of 65 billion. The results reveal a similar conformation among the viable models, with two of the helices (HT and HL) adopting an acute bend. This is in contrast to a recently reported pRNA tetramer crystal structure, in which HT and HL stack onto each other linearly. The studies establish a new method for mapping global structures of complex RNA molecules, and provide information on pRNA conformation that aids investigations of phi29 packaging motor and developments of pRNA-based nanomedicine and nanomaterial.

    20. Fermi-level depinning and contact resistance reduction in metal/n-Ge junctions by insertion of W-encapsulating Si cluster films

      SciTech Connect (OSTI)

      Okada, Naoya [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan); Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Uchida, Noriyuki [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan); Kanayama, Toshihiko [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

      2014-02-10

      We demonstrate Fermi-level depinning in metal/Ge junctions and a significant reduction of specific contact resistivity of n-Ge by inserting an ultra-thin semiconducting Si-rich W silicide film (WSi{sub n}, n?=?12–14) composed of W-encapsulating Si clusters. Dependence of the specific contact resistivity on the electron Schottky barrier height followed the ideal exponential relation for various contact metal species. This result indicates that the insertion of the WSi{sub n} film provides a negligible contribution to contact resistivity because its tunneling resistance is very low owing to the low offset of the conduction band edge of Ge.

    1. Large-area, triple-junction a-Si alloy production scale-up. Semiannual subcontract report, 17 March 1994--18 September 1994

      SciTech Connect (OSTI)

      Oswald, R.; Morris, J. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

      1995-09-01

      This report describes work performed under a 3-y subcontract to advance Solarex`s photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance, and expand the Solarex commercial production capacity. During this period, Solarex focused on improving deposition of the front contact, investigating alternate feedstocks for the front contact, maximizing throughput and area utilization for all laser scribes, optimizing a-Si:H deposition equipment to achieve uniform deposition over large areas, optimizing the triple-junction module fabrication process, evaluating the materials to deposit the rear contact, and optimizing the combination of isolation scribe and encapsulant to pass the wet high potential test.

    2. Photointercalating-semiconductor/solid-electrolyte junctions for storage and chemical detection. Phase 2. Final report, 1 October 1986-31 May 1988

      SciTech Connect (OSTI)

      Sammells, A.F.

      1988-05-31

      The overall objective of this Phase II effort was to perform a scientific and technical characterization of photointercalating-semiconductor/solid-electrolyte junctions for photoelectrochemical energy storage, with emphasis being placed upon the Group IV dichalcogenides n-HfS/sub 2/ and n-ZrS/sub 2/ and their interface with solid polymer electrolytes. Also incorporated within the scope of this program was the application of insights gained towards novel approaches for chemical detection. Here, emphasis was placed upon surface acoustic wave (SAW) and multiple-reflecting optical-waveguide sensors for the reversible detection of SO/sub 2/.

    3. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

      SciTech Connect (OSTI)

      Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

      2014-02-03

      This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

    4. A study of the influence of boron diffusion sources on the material and electrical characteristics of silicon p-n junctions 

      E-Print Network [OSTI]

      Huang, Kuan-Chun Andrew

      1976-01-01

      is . he sheet resistance x. is the junc. ion dep. h. This average ccnductivity is then applied to Irvin's cu ve cr a p-+yoe Gaussian layer in silicon to obtain the surface concentration. Impurity Profile Incremental etching is a technique... for removing thin sections of silicon by a timed etch in a PNO -HF mixture (23). It is a relatively rough but quick technique to determine the impurity profile of a deep junction. A volume mixture of 2$ HF, 98fo HNO is experimentally determined to be best...

    5. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

      SciTech Connect (OSTI)

      Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

      1997-12-31

      Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

    6. Large voltage modulation in magnetic field sensors from two-dimensional arrays of Y-Ba-Cu-O nano Josephson junctions

      SciTech Connect (OSTI)

      Cybart, Shane A. Dynes, R. C.; Cho, E. Y.; Wong, T. J.; Glyantsev, V. N.; Huh, J. U.; Yung, C. S.; Moeckly, B. H.; Beeman, J. W.; Ulin-Avila, E.; Wu, S. M.

      2014-02-10

      We have fabricated and tested two-dimensional arrays of YBa{sub 2}Cu{sub 3}O{sub 7??} superconducting quantum interference devices. The arrays contain over 36?000 nano Josephson junctions fabricated from ion irradiation of YBa{sub 2}Cu{sub 3}O{sub 7??} through narrow slits in a resist-mask that was patterned with electron beam lithography and reactive ion etching. Measurements of current-biased arrays in magnetic field exhibit large voltage modulations as high as 30?mV.

    7. Current-induced switching of magnetic tunnel junctions: Effects of field-like spin-transfer torque, pinned-layer magnetization orientation, and temperature

      SciTech Connect (OSTI)

      Tiwari, R. K.; Jhon, M. H.; Ng, N.; Gan, C. K., E-mail: ganck@ihpc.a-star.edu.sg [Institute of High Performance Computing, Agency for Science, Technology and Research, 1 Fusionopolis Way, 16-16 Connexis, Singapore 138632 (Singapore); Srolovitz, D. J. [Department of Materials Science, Engineering, Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

      2014-01-13

      We study current-induced switching in magnetic tunnel junctions in the presence of a field-like spin-transfer torque and titled pinned-layer magnetization in the high current limit at finite temperature. We consider both the Slonczewski and field-like torques with coefficients a{sub J} and b{sub J}, respectively. At finite temperatures, ?=b{sub J}/a{sub J}=±1 leads to a smaller mean switching time compared that with ?=0. The reduction of switching time in the presence of the field-like term is due to the alignment effect (for ?>0) and the initial torque effect.

    8. Computed tomography image using sub-terahertz waves generated from a high-T{sub c} superconducting intrinsic Josephson junction oscillator

      SciTech Connect (OSTI)

      Kashiwagi, T., E-mail: kashiwagi@ims.tsukuba.ac.jp; Minami, H.; Kadowaki, K. [Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba (Japan); Division of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1, Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Nakade, K.; Saiwai, Y.; Kitamura, T.; Watanabe, C.; Ishida, K.; Sekimoto, S.; Asanuma, K.; Yasui, T.; Shibano, Y. [Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba (Japan); Tsujimoto, M. [Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510 (Japan); Yamamoto, T. [Wide Bandgap Materials Group, Optical and Electronic Materials Unit, Environment and Energy Materials Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Markovi?, B. [Faculty of Sciences, University of Montenegro, George Washington Str., 81000 Podgorica (Montenegro); Mirkovi?, J. [Faculty of Science, University of Montenegro, and CETI, Put Radomira Ivanovica, 81000 Podgorica (Montenegro); Klemm, R. A. [Department of Physics, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida 32816-2385 (United States)

      2014-02-24

      A computed tomography (CT) imaging system using monochromatic sub-terahertz coherent electromagnetic waves generated from a device constructed from the intrinsic Josephson junctions in a single crystalline mesa structure of the high-T{sub c} superconductor Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+?} was developed and tested on three samples: Standing metallic rods supported by styrofoam, a dried plant (heart pea) containing seeds, and a plastic doll inside an egg shell. The images obtained strongly suggest that this CT imaging system may be useful for a variety of practical applications.

    9. Grand Junction Projects Office Remedial Action Project: Feasibility test of real-time radiation monitoring during removal of surface contamination from concrete floors

      SciTech Connect (OSTI)

      Leino, R.; Corle, S.

      1995-10-01

      This feasibility test was conducted to determine if real-time radiation-monitoring instruments could be mounted on decontamination machines during remediation activities to provide useful and immediate feedback to equipment operators. The U.S. Department of Energy (DOE) sponsored this field test under the Grand Junction Projects Office Remedial Action Project (GJPORAP) to identify a more efficient method to remove radiological contamination from concrete floor surfaces. This test demonstrated that project durations and costs may be reduced by combining radiation-monitoring equipment with decontamination machines. The test also demonstrated that a microprocessor-based instrument such as a radiation monitor can withstand the type of vibration that is characteristic of floor scabblers with no apparent damage. Combining radiation-monitoring equipment with a decontamination machine reduces the time and costs required to decontaminate concrete surfaces. These time and cost savings result from the reduction in the number of interim radiological surveys that must be conducted to complete remediation. Real-time radiation monitoring allows equipment operators to accurately monitor contamination during the decontamination process without support from radiological technicians, which also reduces the project duration and costs. The DOE Grand Junction Projects Office recommends more extensive and rigorous testing of this real-time radiation monitoring to include a variety of surfaces and decontamination machines. As opportunities arise, additional testing will be conducted under GJPORAP.

    10. The study of high energy particle irradiation effect on Josephson junction trilayers is relevant to applications in space and radioactive environments. It also allows us to investigate the influence of

      E-Print Network [OSTI]

      The study of high energy particle irradiation effect on Josephson junction trilayers is relevant of 2MeV Helium ion irradiation with doses up to 5.2 × 1016 ions/ cm2 on the tunneling behavior of Nb that over 4nm of intermixing occurred at the interfaces. EDX analysis after irradiation, suggests

    11. 2. HIGH-LOv~ JUNCTION FORY_,\\'UO AN EXPERIMENTAL STUDY OF AL-ALLOYED:'p+ JUNCT;[ONS FOR SSF SOLAR CELT.S As temperature rises en..!."

      E-Print Network [OSTI]

      del Alamo, Jesús A.

      . Luque formed. The deposited Al diss Instituto de Energia Solar {E.T,S,I.T,} phase composition given2. HIGH-LOv~ JUNCTION FORY_,\\'UO AN EXPERIMENTAL STUDY OF AL-ALLOYED:§'p+ JUNCT;[ONS FOR SSF SOLAR+pp+ bifacial SSF solar cells are used to experimentally analyse the interphase in a similar way a 5i layer

    12. Young, L., Dodell-Feder, D., & Saxe, R. (2010). What gets the attention of the temporo-parietal junction? An fMRI investigation of attention and theory of mind.

      E-Print Network [OSTI]

      Saxe, Rebecca

      2010-01-01

      junction? An fMRI investigation of attention and theory of mind. Neuropsychologia, 48(9), 2658-2664. (1 - Christine thinks the milk has gone bad and curdled. 32 - Wayne thinks the toilet paper is triple-ply. 33 - Ken believes he can power his new house with solar energy. 34 - Eric believes that rotten peaches

    13. Use of micromechanical exfoliation of bulk graphite and MoS2 to establish a graphene/MoS2 junction Rebecca Cioffi1, Geoff Musick2, Yunhao Cao3, Tu Hong3, Yaqiong Xu3

      E-Print Network [OSTI]

      . This will form a Schottky barrier between the graphene, a semimetal and MoS2, a p-type doped semiconductor processing and the semiconductor industry [1]. Two such promising 2-D materials are graphene and molybdenumUse of micromechanical exfoliation of bulk graphite and MoS2 to establish a graphene/MoS2 junction

    14. 820 mV open-circuit voltages from Cu2O/CH3CN junctions Chengxiang Xiang, Gregory M. Kimball, Ronald L. Grimm, Bruce S. Brunschwig, Harry A. Atwater*

      E-Print Network [OSTI]

      Kimball, Gregory

      no observable photocorrosion during operation in the nonaqueous electrolyte. The semiconductor/liquid junctions thus provide a noninvasive method to investigate the energy-conversion properties of cuprous oxide) is an attractive material for water photoelectrolysis and for photovoltaics because of the low cost, high

    15. Modeling of electronic transport in GaN n-i-p junctions Laboratoire de Physique du Solide, Facults Universitaires Notre-Dame de la Paix, Rue de Bruxelles 61,

      E-Print Network [OSTI]

      Mayer, Alexandre

      Modeling of electronic transport in GaN n-i-p junctions A. Mayera) Laboratoire de Physique du) We propose a model and an algorithm for computing the transport properties of GaN n-i-p devices as cold cathodes2,3 or thermoelectric coolers.4­8 For applications as electronic emitters, the idea

    16. Large-area, triple-junction a-Si alloy production scale-up. Semiannual subcontract report, 17 March 1994--18 September 1994

      SciTech Connect (OSTI)

      Oswald, R.; Morris, J. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

      1995-03-01

      This report describes work performed under a 3-year subcontract to advance Solarex`s photovoltaic (PV) manufacturing technologies, reduce its hydrogenated amorphous silicon (a-Si:H) module production costs, increase module performance, and expand the Solarex commercial production capacity. During the period covered by this report, Solarex focused on (1) improving deposition of the front contact, (2) investigating alternate feed stocks for the front contact, (3) maximizing throughput and area utilization for all laser scribes, (4) optimizing a-Si:H deposition equipment to achieve uniform deposition over large areas, (5) optimizing the triple-junction module fabrication process, (6) evaluating the materials to deposit the rear contact, and (7) optimizing the combination of isolation scribe and encapsulant to pass the wet high-potential test.

    17. Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

      SciTech Connect (OSTI)

      Kodzuka, M.; Ohkubo, T.; Hono, K.; Ikeda, S.; Ohno, H.; Gan, H. D.

      2012-02-15

      The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co{sub 25}Fe{sub 75}){sub 100-x}B{sub x}/MgO/(Co{sub 25}Fe{sub 75}){sub 100-x}B{sub x} (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x = 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co{sub 25}Fe{sub 75}){sub 67}B{sub 33}, while good epitaxy was observed between (001) textured MgO and (Co{sub 25}Fe{sub 75}){sub 78}B{sub 22} electrodes.

    18. Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film

      SciTech Connect (OSTI)

      Takenaga, Takashi, E-mail: takenaga@leap.or.jp; Tsuzaki, Yosuke; Yoshida, Chikako; Yamazaki, Yuichi; Hatada, Akiyoshi; Nakabayashi, Masaaki; Iba, Yoshihisa; Takahashi, Atsushi; Noshiro, Hideyuki; Tsunoda, Koji; Aoki, Masaki; Furukawa, Taisuke; Fukumoto, Hiroshi; Sugii, Toshihiro [Low-power Electronics Association and Project (LEAP), Tsukuba 305-8569 (Japan)

      2014-05-07

      We evaluated MgO-based magnetic tunnel junctions (MTJs) for magnetic field sensors with spin-valve-type structures in the CoFeB sensing layer capped by an MgO film in order to obtain both top and bottom interfaces of MgO/CoFeB exhibiting interfacial perpendicular magnetic anisotropy (PMA). Hysteresis of the CoFeB sensing layer in these MTJs annealed at 275?°C was suppressed at a thickness of the sensing layer below 1.2?nm by interfacial PMA. We confirmed that the CoFeB sensing layers capped with MgO suppress the thickness dependences of both the magnetoresistance ratio and the magnetic behaviors of the CoFeB sensing layer more than that of the MTJ with a Ta capping layer. MgO-based MTJs with MgO capping layers can improve the controllability of the characteristics for magnetic field sensors.

    19. Environmental Assessment and Finding of No Significant Impact: Transfer of the Department of Energy Grand Junction Office to Non-DOE Ownership

      SciTech Connect (OSTI)

      N /A

      2000-04-25

      The scope of this environmental assessment (EA) is to analyze the potential consequences of the Proposed Action on human health and the environment. Accordingly, this EA contains an introduction to the site and the history of the Grand Junction Office (Chapter One), a description of the Purpose and Need for Agency Action (Chapter Two), a description of the Proposed Action and Alternatives (Chapter Three), and the description of the Affected Environment and the Environmental Consequences (Chapter Four). Resource categories addressed in this EA include geology, soils and topography, groundwater and surface water, floodplains and wetlands, land use and infrastructure, human health, ecological resources, cultural resources, air quality, noise, visual resources, solid and hazardous waste management, transportation, and socioeconomic and environmental justice.

    20. Remedial actions at the former Climax Uranium Company, Uranium Mill site, Grand Junction, Mesa County, Colorado. Volume 1, Text: Final environmental impact statement

      SciTech Connect (OSTI)

      1986-12-01

      This statement evaluates and compares the environmental impacts associated with the remedial actions of the residual radioactive materials remaining at the inactive uranium processing site and associated vicinity properties at Grand Junction, Mesa County, Colorado. This statement is also intended to aid the BLM in amending their management framework plans and final resource management plan, as well as assisting in compliance with the withdrawal application as appropriate. The site is a 114-acre tract of private and state owned land which contains approximately 3.1 million cubic yards of tailings and associated contaminated soils. The vicinity properties are homes, businesses, public buildings, and vacant lots which may have been contaminated during construction by the use of tailings as building material. An estimated 3465 vicinity properties would be cleaned up during remedial action of the tailings pile. The tailings were produced by the former Climax Uranium Company which processed uranium ore, which it sold to the US Atomic Energy Commission from 1951 to 1966 and to private sources from 1966 to 1970. This statement evaluates six alternatives for stabilization and disposal of the tailings and other contaminated materials: (1) No action. (2) Stabilization at the Grand Junction site. (3) Disposal at the Cheney Reservoir site with truck transport. (4) Disposal at the Cheney Reservoir site with train and truck transport. (5) Disposal at the Two Road site with truck transport. (6) Disposal at the Two Road site with train and truck transport. All of the alternatives except no action include remedial action at an estimated 3465 vicinity properties. Alternative 3 is DOE`s preferred alternative.

    1. Commercialization of New Lattice-Matched Multi-Junction Solar Cells Based on Dilute Nitrides: July 8, 2010 - March 7, 2012

      SciTech Connect (OSTI)

      Herb, J.

      2012-04-01

      Final Technical Progress Report for PV Incubator subcontract NAT-0-99013-03. The overall objective of this Incubator subcontract was to complete the work necessary to make commercial ready solar cells using the dilute nitride technology. The specific objectives of this program were aimed at completing the development of a triple-junction solar cell that incorporates a GaInNAs {approx}1eV subcell to the point of commercial readiness, and determining the cell reliability and, if necessary, identifying and eliminating process or material related issues that lead to early-life cell failures. There were three major objectives for Phase 1, each of which focuses on a key element of the solar cell that determines its performance in a commercial CPV system. One objective was to optimize the quality and performance of the key individual components making up the solar cell structure and then to optimize the integration of these components into a complete triple-junction cell. A second objective was to design and test anti-reflective coating that maximizes the light coupled into a 3J cell with a {approx}1 eV bottom cell bandgap. The third objective was to develop Highly Accelerated Life Tests (HALT) protocols and tools for identifying and correcting potential reliability problems. The Phase 2 objectives were a continuation of the work begun in Phase 1 but aimed at optimizing cell performance for commercial requirements. Phase 2 had four primary objectives: (1) develop a glass-matched anti-reflective coating (ARC) and optimize the cell/ARC to give good performance at 60C operating temperature, (2) optimize the cell for good operation at 60C and high concentration, and (3) complete the light biased HALT system and use it to determine what, if any, failures are observed, and (4) determine the reliability limits of the optimized cell.

    2. SU-E-T-12: A Feasibility Study of Patient Specific QA Using Gafchromic Film of Dynamic Feathering in Junctions of Craniospinal Irradiation

      SciTech Connect (OSTI)

      Stanford, J; Duggar, W; Yang, C

      2014-06-01

      Purpose: Cranio-spinal irradiation is the most complicated format of the conventional external beam radiation therapy because it involves matches of non-coplanar beams which are susceptible to daily setup errors. This study explores the efficacy of Gafchromic film dosimetry to quantitatively verify the junctions for cranio-spinal radiation feathered with field in field technique. Methods: 15cm in thickness of solid water phantom was scanned vertically and exported to the Pinnacle TPS as primary phantom data set. A patient cranio-spinal plan, consisted of two bilateral whole brain beams dynamically matched with a posterior spinal beam using field in field technique, was transferred to the phantom and recalculated for one fraction with set monitor units identical to the original plan. Next, planar dose distribution on the phantom was exported to the FilmQA Pro 2013 software (Ashland, Inc.) in binary format for comparison with the measured dose distribution. An EBT2 film was sandwiched in the middle of the phantom and the phantom was set up according to the QA plan based on the room laser system. The shifts instructions associated with the patient original plan were made and the beams from the patient original plan delivered to the solid water phantom via the record and verify system in QA mode. The dose distribution from the measured film was compared with the planned reference distribution using gamma analysis and profile comparison. Results: Gamma passing rate of 91 % with DTA 3mm and 5% dose difference was obtained within the junction region, significantly greater passing rate above 95 % was obtained in the homogeneous region of the brain field. Conclusion: This study confirms that Gafchromic film dosimetry can be used to validate the efficacy of FIF feathering technique for cranio-spinal treatment. FIF technique with Gafchromic dosimetry may now be the new standard for delivering efficient and accurate cranio-spinal radiation with confidence.

    3. sup 1 H and sup 31 P-NMR assignments of the non-exchangeable protons of the consensus acceptor exon:intron junction d(CpTpApCpApGpGpT)

      SciTech Connect (OSTI)

      Lown, J.W.; Chang, D.K.; Debart, F.; Rayner, B.; Imbach, J.L. )

      1986-06-01

      The consensus acceptor exon:intron junction d(CpTpApCpApGpGpT) has been synthesized by a modified phosphotriester method. The non-self complementary octamer exists in the single strand form in aqueous buffer at 20 degrees C as evidenced by temperature variable {sup 1}H-NMR and NOE measurements. The non-exchangeable proton assignments were secured using a combination of techniques including two-dimensional COSY, NOESY and the double quantum technique {sup 1}H-{sup 1}H-INADEQUATE as well as inversion recovery T1 experiments. The new technique of {sup 31}P-1H shift correlation is particularly valuable in removing certain ambiguities in the sugar proton assignments. Characteristic chemical shifts for the base protons which are determined by their immediate molecular environments are also useful in assignments. The consensus acceptor exon:intron junction adopts a random coil conformation in solution under the experimental conditions employed.

    4. Large-area triple-junction a-Si alloy production scaleup. Annual subcontract report, 17 March 1993--18 March 1994

      SciTech Connect (OSTI)

      Oswald, R.; Morris, J. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

      1994-11-01

      The objective of this subcontract over its three-year duration is to advance Solarex`s photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance and expand the Solarex commercial production capacity. Solarex shall meet these objectives by improving the deposition and quality of the transparent front contact, by optimizing the laser patterning process, scaling-up the semiconductor deposition process, improving the back contact deposition, scaling-up and improving the encapsulation and testing of its a-Si:H modules. In the Phase 2 portion of this subcontract, Solarex focused on improving deposition of the front contact, investigating alternate feed stocks for the front contact, maximizing throughput and area utilization for all laser scribes, optimizing a-Si:H deposition equipment to achieve uniform deposition over large-areas, optimizing the triple-junction module fabrication process, evaluating the materials to deposit the rear contact, and optimizing the combination of isolation scribe and encapsulant to pass the wet high potential test. Progress is reported on the following: Front contact development; Laser scribe process development; Amorphous silicon based semiconductor deposition; Rear contact deposition process; Frit/bus/wire/frame; Materials handling; and Environmental test, yield and performance analysis.

    5. Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

      SciTech Connect (OSTI)

      Ohsawa, T.; Ikeda, S.; Hanyu, T.; Ohno, H.; Endoh, T.

      2014-05-07

      The robustness of data load of metal–oxide–semiconductor/magnetic tunnel junction (MOS/MTJ) hybrid latches at power-on is examined by using Monte Carlo simulation with the variations in magnetoresistances for MTJs and in threshold voltages for MOSFETs involved in 90?nm technology node. Three differential pair type spin-transfer-torque-magnetic random access memory cells (4T2MTJ, 6T2MTJ, and 8T2MTJ) are compared for their successful data load at power-on. It is found that the 4T2MTJ cell has the largest pass area in the shmoo plot in TMR ratio (tunnel magnetoresistance ratio) and V{sub dd} in which a whole 256?kb cell array can be powered-on successfully. The minimum TMR ratio for the 4T2MTJ in 0.9?V?

    6. Progress on First-Principles Calculations and Experimental Results of Single-crystalline Magnetic Tunnel Junctions with MgO barriers

      SciTech Connect (OSTI)

      Wang, Y.; Zhang, J.; Zhang, Xiaoguang; Wang, Shouguo; Han, Xiufeng

      2009-01-01

      Since the theoretical prediction and experimental observation of giant tunneling magnetoresistance (TMR) effect at room temperature in magnetic tunnel junctions (MTJs) with single-crystalline MgO(001) barrier, MgO-based MTJs have been extensively studied due to their broad potential applications in spintronic devices. In this paper, progress on theoretical calculations and experimental results in MgO-based MTJs is reported. Spin-dependent electronic structure and transport properties of MgO-based MTJs, including structures of Fe(001)/MgO/Fe, Fe(001)/FeO/MgO/Fe, Fe(001)/Mg/MgO/Fe, Fe(001)/Co/MgO/Co/Fe, and Fe(001)/MgO/Fe/MgO/Fe, have been studied using the Layer-KKR first-principles method. The quantitative result not only provide a better way to understand the electronic structures and spin-dependent transport properties of MgO-based MTJs, but also shows a direction to exploit new kinds of spintronic materials with high room-temperature TMR ratio.

    7. Junctional and allele-specific residues are critical for MERS-CoV neutralization by an exceptionally potent germline-like antibody

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Ying, Tianlei; Prabakaran, Ponraj; Du, Lanying; Shi, Wei; Feng, Yang; Wang, Yanping; Wang, Lingshu; Li, Wei; Jiang, Shibo; Dimitrov, Dimiter S.; et al

      2015-09-15

      The MERS-CoV is an emerging virus, which already infected more than 1,300 humans with high (~36%) mortality. Here, we show that m336, an exceptionally potent human anti-MERS-CoV antibody, is almost germline with only one somatic mutation in the heavy chain. The structure of Fab m336 in complex with the MERS-CoV receptor-binding domain reveals that its IGHV1-69-derived heavy chain provides more than 85% binding surface and that its epitope almost completely overlaps with the receptor-binding site. Analysis of antibodies from 69 healthy humans suggests an important role of the V(D)J recombination-generated junctional and allele-specific residues for achieving high affinity of bindingmore »at such low levels of somatic hypermutation. Our results also have important implications for development of vaccine immunogens based on the newly identified m336 epitope as well as for elucidation of mechanisms of neutralization by m336-like antibodies and their elicitation in vivo.« less

    8. Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

      SciTech Connect (OSTI)

      Müller, Ralph Schrof, Julian; Reichel, Christian; Benick, Jan; Hermle, Martin

      2014-09-08

      The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implanted phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674?mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.

    9. World`s first application of a multilateral system combining a cased and cemented junction with fullbore access to both laterals

      SciTech Connect (OSTI)

      Hovda, S.; Haugland, T.; Waddel, K. [and others

      1996-12-31

      Norsk Hydro in conjunction with its service partners have completed the world`s first multilateral well with a cased and cemented junction and fullbore access to both laterals. Norsk Hydro`s Oseberg C platform has a limited number of slots to drill new wells to recover considerable reserves that remain in the Ness Formation of the Brent Group. Multilateral wells were seen as a solution to provide additional cost effective drainage points to the reservoir unit. This highly visible and multidisciplined project demanded a dedicated team from Norsk Hydro and Halliburton during the planning and execution phases. The C-12B horizontal section was drilled and completed as planned in the ORE (Oseberg, Rannoch & Etive) Formations. A window was cut in the 9 5/8-in. parent casing with a packer-based multilateral system. A new lateral was drilled and completed in the Ness Formation and the parent wellbore was regained. Commingled production is possible when the pressure differentials between the two formations have equalized. The following list outlines the main objectives of the testing of multilateral technology. (1) install the whipstock and mill a window (2) install a hollow whipstock (3) install and cement the lateral liner (4) reestablish the parent wellbore (5) acquire fullbore access to the Ness and ORE laterals Norsk Hydro and its service partners evaluated each operational phase according to success criteria mutually agreed upon at the outset of the project.

    10. Building America Case Study: Conway Street Apartments, Greenfield, Massachusetts (Fact Sheet), Whole-House Solutions for Existing Homes, Energy Efficiency & Renewable Energy

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum Based Fuels ResearchofDerivativeCold Climate Foundation WallConway Street

    11. Cryogenic characterization of Josephson junctions

      E-Print Network [OSTI]

      Brown, Keith Andrew

      2006-01-01

      Cryogenic characterization is a crucial part of understanding the behavior of low-temperature quantum electronics. Reliable device testing provides the feedback to fabrication process development, facilitating the rapid ...

    12. Solar Junction | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity forSilicium deEnergy InformationDepotGreen Technology SJunction

    13. Area Rental Properties Rents are provided for general information only and may change without notice. Area code 931.

      E-Print Network [OSTI]

      Davis, Lloyd M.

      , dishwasher & garbage, disposal furnished, swim pool, basketball court, playground, tennis courts East Grundy Street Tullahoma, TN 37388 2 BR Townhouses $560 ­ $400 Deposit Dishwasher, Stove

    14. SEARCHING: FAST AND SLOW #TAIA2014 Jul 11, 2014

      E-Print Network [OSTI]

      Dumais, Susan

      or Greenfield with a gluten-free menu and a fairly sophisticated atmosphere Crowd workers identify important

    15. Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based magnetic tunneling junctions

      SciTech Connect (OSTI)

      Chae, Kyo-Suk; Park, Jea-Gun

      2015-04-21

      For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4?nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer. Thus, the TMR ratio peaked at t{sub Fe}?=?0.4?nm: i.e., 120% at 29???m{sup 2}.

    16. Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

      SciTech Connect (OSTI)

      Sogabe, Tomah Ogura, Akio; Okada, Yoshitaka

      2014-02-21

      Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR ?V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR??V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR??V{sub bias} measurements. The profile of SR?V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

    17. Non-Ideal p-n junction Diode of Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6, 0.7) Thin Films

      SciTech Connect (OSTI)

      Mustafa, Falah I. [Solar Energy Research Center, Renewable Energy Directorate, Ministry of Science and Technology, Baghdad (Iraq); Gupta, Shikha; Goyal, N.; Tripathi, S. K. [Department of Physics, Panjab University, Chandigarh -160014 (India)

      2011-12-12

      We have made diodes consisting of the same alloy i.e. Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6 and 0.7), but change the concentration of Sb metal from 40% to 70% atomic weight percentage. It is observed from the Hall measurements that the nature of charge carriers have changed from p- to n-type at x = 0.6 for Sb{sub x}Se{sub 1-x}. We have measured I-V characteristics of four p-n junction diodes i.e. p-Sb{sub 2}Se{sub 3}/n-Sb{sub 3}Se{sub 2}, p-Sb{sub 2}Se{sub 3}/n-Sb{sub 7}Se{sub 3}, p-SbSe/n-Sb{sub 3}Se{sub 2}, p-SbSe/n-Sb{sub 7}Se{sub 3}. From the I-V plots we have calculated the parameters as built-in voltage (V{sub bi}), forward resistance (R{sub f}), ideal factor (n), saturation current (I{sub o}), breakdown current (I{sub Bd}) and breakdown voltage (V{sub Bd}).

    18. Tandem junction amorphous semiconductor photovoltaic cell

      DOE Patents [OSTI]

      Dalal, Vikram L. (Newark, DE)

      1983-01-01

      A photovoltaic stack comprising at least two p.sup.+ i n.sup.+ cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p.sup.+ i n.sup.+ cells.

    19. Tandem junction amorphous semiconductor photovoltaic cell

      DOE Patents [OSTI]

      Dalal, V.L.

      1983-06-07

      A photovoltaic stack comprising at least two p[sup +]i n[sup +] cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p[sup +]i n[sup +] cells. 3 figs.

    20. Liquid junction schottky barrier solar cell

      DOE Patents [OSTI]

      Williams, Richard (Princeton, NJ)

      1980-01-01

      A mixture of ceric ions (Ce.sup.+4) and cerous ions (Ce.sup.+3) in an aqueous electrolyte solution forms a Schottky barrier at the interface between an active region of silicon and the electrolyte solution. The barrier height obtained for hydrogenated amorphous silicon using the Ce.sup.+4 /Ce.sup.+3 redox couple is about 1.7 eV.

    1. Analysis of Holliday junction-binding compounds

      E-Print Network [OSTI]

      Rideout, Marc Christoffer

      2011-01-01

      of antibiotic resistance in bacteria, viral life-cycles, andof multiple drug resistance in bacteria, we have been

    2. Macroscopic quantum tunneling in Josephson junctions -

      E-Print Network [OSTI]

      Gross, Rudolf

      temperature setup Georg Wild Diploma Thesis Advisor: Prof. Dr. R. Gross 2004 Walther Josephson relation . . . . . . . . . . . . . . . . . 12 1.4 RCSJ-Model system . . . . . . . . . . . . . . . . . . . . . 35 #12;vi Contents 3.3.4 Solution of the Schrödinger

    3. PN JUNCTIONS; DIODES Lecture 10-V

      E-Print Network [OSTI]

      Smith, Nathanael J.

      ://www.instructables.com/id/LED-Throwies/ http://ftechblog.com/comparison-between-lcd-and-led-tv/ #12;Applications II ­ Photovoltaics 15 http://en.wikipedia.org/wiki/Solar_panel

    4. Measurement of Tunnel Junction Resistance during Formation

      E-Print Network [OSTI]

      Bland, Roger

      and wire­bonding of the device. Under the assumption that oxygen was diffusing through the electrodes, we, pumped with an oil diffusion pump. Throughout fabrication of the device, liquid nitrogen is circulated

    5. Quantum Junction Solar Cells Jiang Tang,,

      E-Print Network [OSTI]

      Sargent, Edward H. "Ted"

      tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis To date, the bandgaps of light-absorbing semiconductors making up multijunction solar cells have been quantum dots offer avenues to inexpensive and robust multijunction solar cell architectures. Recently

    6. DOE Grand Junction Projects Office Edgemont LTSP

      Office of Legacy Management (LM)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers CoMadison - 1325.8. (8-89) EFO IO?-90)DOE

    7. Grand Junction, Colorado, Site Fact Sheet

      Office of Legacy Management (LM)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the t-) S/,,5 'a C O M P R E H E N S I551Grand

    8. Junction Hilltop Wind | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View NewGuam:onItron (California)JointJosephine, Texas:Gap Wind

    9. Delta Junction Wind Farm | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePower VenturesInformation9) WindGridDeepi hassource History

    10. Grand Junction Office Founder Honored at the

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,Executive CompensationEnergyGet Current:5Logging Systems (December4 Grand

    11. Aerial photographic interpretation of lineaments and faults in late cenozoic deposits in the Eastern part of the Benton Range 1:100,000 quadrangle and the Goldfield, Last Chance Range, Beatty, and Death Valley Junction 1:100,000 quadrangles, Nevada and California

      SciTech Connect (OSTI)

      Reheis, M.C.; Noller, J.S.

      1991-09-01

      Lineaments and faults in Quaternary and late Tertiary deposits in the southern part of the Walker Lane are potentially active and form patterns that are anomalous with respect to the typical fault patterns in most of the Great Basin. Little work has been done to identify and characterize these faults, with the exception of those in the Death Valley-Furnace Creek (DVFCFZ) fault system and those in and near the Nevada Test Site. Four maps at a scale of 1:100,000 summarize the existing knowledge about these lineaments and faults based on extensive aerial-photo interpretation, limited field investigations, and published geologic maps. The lineaments and faults in all four maps can be divided geographically into two groups. The first group includes west- to north-trending lineaments and faults associated with the DVFCFZ and with the Pahrump fault zone in the Death Valley Junction quadrangle. The second group consists of north- to east-northeast-trending lineaments and faults in a broad area that lies east of the DVFCFZ and north of the Pahrump fault zone. Preliminary observations of the orientations and sense of slip of the lineaments and faults suggest that the least principle stress direction is west-east in the area of the first group and northwest-southeast in the area of the second group. The DVFCFZ appears to be part of a regional right-lateral strike-slip system. The DVFCFZ steps right, accompanied by normal faulting in an extensional zone, to the northern part of the Walker Lane a the northern end of Fish Lake Valley (Goldfield quadrangle), and appears to step left, accompanied by faulting and folding in a compressional zone, to the Pahrump fault zone in the area of Ash Meadows (Death Valley Junction quadrangle). 25 refs.

    12. Characterization of ultrashallow junctions using frequency-dependent junction photovoltage and its lateral attenuation

      E-Print Network [OSTI]

      Schroder, Dieter K.

      signals inside and outside the illumination area. Two electrodes, a round transparent elec- trode 1 with diameter 2r0 at the center of the probe and a second round arc conducting electrode 2 subtending an angle

    13. 2015 Forum on Hydropower

      Office of Energy Efficiency and Renewable Energy (EERE)

      Discover how Canadian hydropower is learning lessons and building the future. Get updated on greenfield, rehabilitation, refurbishment and expansion projects going on across the country. Learn how...

    14. Electromagnetically Induced Transparency in a Double Well Atomic Josephson Junction

      E-Print Network [OSTI]

      Weatherall, J. O.; Search, C. P.

      2009-01-01

      a weakly interacting Bose–Einstein condensate of N atomstransparency in an atomic Bose–Einstein condensate trappedwell coherence of the Bose–Einstein condensate wave function

    15. Gap Junction Structures. IV. Revealed by Low-irradiation

      E-Print Network [OSTI]

      Baker, Timothy S.

      , and negatively stained with uranyl acetate, have been recorded by low-irradiation methods. Our Fourier- averaged with uranyl acetate, showed hexagonal shaped connexons arrayed with approximate mirror symmetry

    16. Solar Junction Develops World Record Setting Concentrated Photovoltaic...

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      the company's concentrated photovoltaic technology that also set a world record for conversion efficiency. The company's cell technology relies on inexpensive lenses to magnify...

    17. Inelastic transport In molecular junctions from first principles

      E-Print Network [OSTI]

      Kim, Sejoong, Ph. D. Massachusetts Institute of Technology

      2012-01-01

      This work is dedicated to development of a first-principle approach to study electron-vibration interactions on quantum transport properties. In the first part we discuss a general implementation for inelastic transport ...

    18. A normal metal tunnel-junction heat diode

      SciTech Connect (OSTI)

      Fornieri, Antonio, E-mail: antonio.fornieri@sns.it; Martínez-Pérez, María José; Giazotto, Francesco, E-mail: giazotto@sns.it [NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa (Italy)

      2014-05-05

      We propose a low-temperature thermal rectifier consisting of a chain of three tunnel-coupled normal metal electrodes. We show that a large heat rectification is achievable if the thermal symmetry of the structure is broken and the central island can release energy to the phonon bath. The performance of the device is theoretically analyzed and, under the appropriate conditions, temperature differences up to ?200 mK between the forward and reverse thermal bias configurations are obtained below 1?K, corresponding to a rectification ratio R?2000. The simplicity intrinsic to its design joined with the insensitivity to magnetic fields make our device potentially attractive as a fundamental building block in solid-state thermal nanocircuits and in general-purpose cryogenic electronic applications requiring energy management.

    19. Josephson Junctions and Devices fabricated by Focused Electron Beam Irradiation

      E-Print Network [OSTI]

      Booij, Wilfred Edwin

      aligner (Canon PPC 210) followed by approximately one minute of development in a 1 to 3 solution of microposit developer. When the edge beat was very thick, and therefore not completely removed, the process was repeated. High resolution optical exposure...

    20. Nonvolatile memory disturbs due to gate and junction leakage currents

      E-Print Network [OSTI]

      Schroder, Dieter K.

      leakage currents induced by stress due to LOCOS and trap- assisted tunneling (TAT). * Corresponding author Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State) from traps within the gate oxides. Such low gate leakage currents can lead to sufficient charge

    1. Voltage-Controlled Magnetic Dynamics in Nanoscale Magnetic Tunnel Junctions

      E-Print Network [OSTI]

      Alzate Vinasco, Juan Guillermo

      2014-01-01

      SWITHCHED  VIA  THERMAL   ACTIVATION  OR  PRECESSIONAL  is partially lowered, thermal activation can result in astate can fall via thermal activation. Note that the large

    2. Characterization and Write Error Rates of Magnetic Tunnel Junctions

      E-Print Network [OSTI]

      Cai, Xueqing

      2014-01-01

      mechanism changes from thermal activation to a precessionalcombinations of thermal activation or precession, used in

    3. Spin Torques in Magnetic and Superconducting Tunnel Junctions

      E-Print Network [OSTI]

      Hoffman, Silas Eli

      2012-01-01

      Proximity Effects at Superconducting Interfaces . . . . . .of spin-triplet superconductivity in Co-based JosephsonExchange Field in Superconductor- Ferromagnet Structures. ”

    4. Voltage-Controlled Magnetic Dynamics in Nanoscale Magnetic Tunnel Junctions

      E-Print Network [OSTI]

      Alzate Vinasco, Juan Guillermo

      2014-01-01

      and D. M. Treger, "Spintronics: A Spin-Based ElectronicsS. S. P. Parkin, "Spintronics," Annual Review of CondensedJ. Fabian, and S. Das Sarma, "Spintronics: Fundamentals and

    5. Reinventing the PN Junction: Dimensionality Effects on Tunneling Switches

      E-Print Network [OSTI]

      Agarwal, Sapan

      2012-01-01

      Effects on Tunneling Switches By Sapan Agarwal AEffects on Tunneling Switches Copyright © 2012 by SapanEffects on Tunneling Switches by Sapan Agarwal Doctor of

    6. Experimental Studies of Oxide Magnetic Tunnel Junctions and Graphene

      E-Print Network [OSTI]

      Liu, Xinfei

      2012-01-01

      effect transistors (FET), spintronic devices, and singleproperty for potential spintronic device applications. In aa great promise for spintronic applications. In addition, we

    7. Voltage-Controlled Magnetic Dynamics in Nanoscale Magnetic Tunnel Junctions

      E-Print Network [OSTI]

      Alzate Vinasco, Juan Guillermo

      2014-01-01

      Amiri, “Low-Power Nonvolatile Spintronic Memory: STT-RAM andMagnetic Anisotropy in Spintronic Devices," SPIN, vol. 02,I. A. Young, "Benchmarking spintronic logic devices based on

    8. High-Intensity Silicon Vertical Multi-Junction Solar Cells |...

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      operation for optimum compatibility with most power processing loads. An active cooling system in the StarGen solar concentrator removes heat from the PhotoVolt cells,...

    9. Gap Junctions and Connexon Hemichannels in Human Embryonic Stem Cells

      E-Print Network [OSTI]

      Huettner, James E.

      cells main- tained in vitro expressed RNA for 18 of the 20 known connexins; only connexin 40.1 (Cx40.1) and Cx50 were not detected by reverse transcription-polymerase chain reac- tion. Cx40, Cx43, and Cx45 communication that is observed in early embryos [3, 4]. More than 20 different connexin (Cx) subunits

    10. INTRODUCTION Gap junctions are intercellular protein channels formed by

      E-Print Network [OSTI]

      Snyder, Scott A.

      expressed in both HeLa transfectants (rat Cx26, rat Cx32 and mouse Cx45) and Xenopus oocytes (rat Cx26 and rat Cx32). In HeLa cells, we examined permeability to two fluorescent molecules: Lucifer Yellow (LY of the kinetics of fluorescent dye transfer showed Cx32, Cx26 and Cx45 to have progressively decreasing

    11. Experimental Studies of Oxide Magnetic Tunnel Junctions and Graphene

      E-Print Network [OSTI]

      Liu, Xinfei

      2012-01-01

      electron interaction in graphene. The central Nernst peak83, 6694 (1998). Chapter IV Introduction to Graphene IV-1Discovery of Graphene Carbon-based electronic materials have

    12. Method of junction formation for CIGS photovoltaic devices

      DOE Patents [OSTI]

      Delahoy, Alan E.

      2006-03-28

      Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

    13. Method of junction formation for CIGS photovoltaic devices

      DOE Patents [OSTI]

      Delahoy, Alan E. (Rocky Hill, NJ)

      2010-01-26

      Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

    14. LM Completes the Grand Junction, Colorado, Site Historical Wall Display

      Broader source: Energy.gov [DOE]

      On Wednesday, October 8, a new display was unveiled at DOE Headquarters in Washington, DC, by DOE Deputy Under Secretary David Klaus. The display celebrates more than 70 years of operations at the...

    15. Amorphous silicon passivated contacts for diffused junction silicon solar cells

      SciTech Connect (OSTI)

      Bullock, J. Yan, D.; Wan, Y.; Cuevas, A.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

      2014-04-28

      Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

    16. Theory of Proximity Effect in Junctions with Unconventional Superconductors

      E-Print Network [OSTI]

      Fominov, Yakov

      Materials where MARS is observed YBa2CuO7- (Geerk, Kashiwaya, Iguchi, Greene, Yeh, Wei...) Bi2Sr2CaCu2Oy (Ng, Suzuki, Greene....) La2-xSrxCuO4 (Iguchi) La2-xCexCuO4 (Cheska) Pr2-xCexCuO4 (R.L.Greene) Sr2RuO4 function Fourier transformed momentum of relative coordinate Fourier transformed frequency (energy

    17. SMALL AREA SILICON DIFFUSED JUNCTION X-RAY DETECTORS

      E-Print Network [OSTI]

      Walton, J.T.

      2010-01-01

      hours. This produces an oxide layer of approximately 7000A.are then cut through this oxide layer using photomasking

    18. Nonreciprocity in active Josephson junction circuits Archana Kamal

      E-Print Network [OSTI]

      Devoret, Michel H.

      such as Steve Girvin and Rob Schoelkopf. With his charming and sharp wit, Steve can infuse fun and clarity

    19. Reinventing the PN Junction: Dimensionality Effects on Tunneling Switches

      E-Print Network [OSTI]

      Agarwal, Sapan

      2012-01-01

      S, X, Y, and Z to give a wavefunction of: ? S nx , ny ? ?X nx ny? nx . ny = ? ? Y nx , ny ? ? ? Z nx , ny ? ? To show how to

    20. Targeting the tight junction : immunotherapy of colon cancer

      E-Print Network [OSTI]

      Ackerman, Margaret E

      2010-01-01

      A33 is a cell surface glycoprotein of colon epithelium with a long clinical history as a target in antibody-based cancer therapy. Despite being present in normal colon, radio-labeled antibodies against A33 are selectively ...

    1. Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin...

      Office of Scientific and Technical Information (OSTI)

      Society Sponsoring Org: USDOE Country of Publication: United States Language: English Word Cloud More Like This Free Publicly Accessible Full Text Publisher's Accepted Manuscript...

    2. Experimental Studies of Oxide Magnetic Tunnel Junctions and Graphene

      E-Print Network [OSTI]

      Liu, Xinfei

      2012-01-01

      grown ex-situ by Atomic Layer Deposition as well as LSMO/40 III-2-2 Atomic Layer Depositionand PLD etc Atomic layer deposition (ALD) is well-known

    3. Density of States in an SNS Junction with Current

      E-Print Network [OSTI]

      Fominov, Yakov

      diagram" -1 -N-1/2 0 N-1/2 0.5 1g- g 0 N-3/4 1 #12;Universal result Scaling: g = (3N)1/3 7/9 2 , = Eg as a function of = g- g · 1 2Eg E - Eg , -1 Eg-E Eg -2/3 , · exp -N 4 Eg-E Eg 2 N3/2 2 Eg-E Eg 1/4 , 2/3 Eg-E Eg 1 #12;#12;#12;

    4. The development of magnetic tunnel junction fabrication techniques

      E-Print Network [OSTI]

      Elwell, Clifford Alastair

      , Dept. Materials Science, University of Cambridge July, 2002. Acknowledgements This work would not have been possible without the support of a number of people. I would firstly like to thank my supervisor, Dr Mark Blamire for all his... . All my proof readers have been great: Frances Gibson, Karen Yates, Mike Gibson, Angus Bryant, Angela MacKay, Gemma France, Mike Elwell and John Durrell. In the words of Socrates: “The unexamined life is not worth living.” I’d like to thank everyone...

    5. Microwave-induced phase escape in a Josephson tunnel junction

      E-Print Network [OSTI]

      Guozhu, Sun; Yiwen, Wang; Junyu, Cao; Jian, Chen; Zhengming, Ji; Lin, Kang; Weiwei, Xu; Yang, Yu; Han, Siyuan; Peiheng, Wu

      2008-03-28

      on the power and frequency of the applied microwave. We present a model to describe the behavior of the primary peak in the switching current distribution, which is confirmed by our experimental results. The obtained features can be used to characterize...

    6. Tuning the Thermal Properties of Magnetic Tunnel Junctions 

      E-Print Network [OSTI]

      Amin, Vivek Pravin

      2014-04-18

      (k) (2.49) a+?n(E) = ? ?m s?n??ma ? ?m(E) (2.50) We now see that scaling a(E) in equation 2.47 allows us to relate the incoming and outgoing modes using the current scattering coefficients instead of the wavefunction scattering coefficients. 2...

    7. Multiple-junction quantum cascade photodetectors for thermophotovoltaic energy

      E-Print Network [OSTI]

      Paiella, Roberto

      . Appl. Phys. 102(7), 074907 (2007). 9. M. A. Green, Third Generation Photovoltaics (Springer codes: (250.5590) Quantum-well, -wire and -dot devices; (040.5350) Photovoltaic. References and links 1

    8. Mode-Selective Optical Sensing using Asymmetric Waveguide Junctions

      E-Print Network [OSTI]

      Racz, G. Zs.; Bamiedakis, N.; Penty, R.

      2015-06-01

      , serious degradation in the evanescent-wave sensor operation can occur [7]. To overcome this issue,reference waveguides are typically deployed such as in interferometric sensors, in order to distinguish real from spurious sensor response. Here, we propose... . 26, S249-S259, 1993. 12. U.S. Kayyali, T.B. Moore, J.C. Randall and R.J. Richardson, “Neurotoxic Esterase (NTE) Assay: Optimized Conditions Based on Detergent-Induced Shifts in the Phenol/4-Aminoantipyrine Chromophore Spectrum,” J Anal Toxicol, pp...

    9. NREL: Awards and Honors - Triple-Junction Terrestrial Concentrator...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      of power and produce as much as 86.3 kWh of electricity during a typical year under a Phoenix, AZ sun. This means that 100 to 150 of these cells could produce enough electricity...

    10. Thermopower of Molecular Junctions: An ab Initio Study

      E-Print Network [OSTI]

      Baranger, Harold U.

      voltage or vice versa1 smight provide an alternative avenue for meeting future energy needs if its and PBE0 energy functionals. Systematic good agreement between theory and experiment is obtained; indeed and promising approach.6-14 In these devices, the electrodes' Fermi energy can be located very close

    11. Template Synthesis of Metal Nanowires Containing Monolayer Molecular Junctions

      E-Print Network [OSTI]

      -mercaptohexanoic acid were made by replication of the pores of 70 nm diameter polycarbonate track etch membranes such as molecular conduction, rectification, negative differential resistance, and configurable switching.4

    12. DOE - Office of Legacy Management -- Grand Junction Sites

      Office of Legacy Management (LM)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont, SouthLaboratoryDiv -New MexicoGeothermalAZGrand

    13. Grand Junction, Colorado: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia: EnergyGorlitz

    14. Monmouth Junction, New Jersey: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: Energy ResourcesDec(Pritchett, 2004) |Monee, Illinois:UNEPJunction, New Jersey:

    15. DNA Gridiron Nanostructures Based on Four-Arm Junctions

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HAB Packet Hanford Advisory Board6/23/2014DLFM library tools forDMSEDNA

    16. Lessons Learned: The Grand Junction Office Site Transfer to Private

      Broader source: Energy.gov (indexed) [DOE]

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy A plug-inPPLforLDRDEnergyTurbine bladesJune 22,Success

    17. City of Grand Junction, Iowa (Utility Company) | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtdEllsworth, IowaGraettinger, Iowa (Utility Company)Grand

    18. Solar Junction Develops World Record Setting Concentrated Photovoltaic

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy BillsNo.Hydrogen4Energy SmoothEquipment CertificationSolar HotSolar Cell

    19. Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin

      Office of Scientific and Technical Information (OSTI)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnical Report:Speeding accessby aLEDSpeeding accessSpeedingPATENTS- 05 - - A75Nature

    20. Biggs Junction, Oregon: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental JumpInformation BeaufortBentMichigan:Greece)Daddy s BiodieselSky,Big

    1. Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin

      Office of Scientific and Technical Information (OSTI)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnical Report:Speeding access toSmall Reactor forPatents - Mildredsensors in

    2. Coso Junction, California: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)| Open(Evans,Oregon:Volcano,Corson County,CorumPowertech

    3. White River Junction, Vermont: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (Utility Company)Idaho)VosslohWest PlainsAssn, Inc JumpGroup LLC

    4. Design of Flexible-Duct Junction Boxes | Department of Energy

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum Based| Department8, 20153Danielthrough theKDesert Peakof EnergyofDesign of

    5. Heterojunction for Multi-Junction Solar Cells - Energy Innovation Portal

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journalvivo Low-DoseOptions forHeavy-DutyHere�s What�s GoingMolecules

    6. High Efficiency Multiple-Junction Solar Cells - Energy Innovation Portal

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journalvivo Low-DoseOptionsthroughput spectrometer forInnovationandSolar

    7. The cell-cell junctions of mammalian testes: I. The adhering junctions of the seminiferous epithelium represent special differentiation structures

      E-Print Network [OSTI]

      Domke, Lisa M.

      The seminiferous tubules and the excurrent ducts of the mammalian testis are physiologically separated from the mesenchymal tissues and the blood and lymph system by a special structural barrier to paracellular translocations ...

    8. Draft Environmental Assessment for the High Explosive Science...

      National Nuclear Security Administration (NNSA)

      to minimize interferences with other Pantex operations and allow construction using a green-field approach. The design of the HE S&E Facility will comply with the Leadership in...

    9. VEE-0035- In the Matter of Rice Oil Company, Inc.

      Broader source: Energy.gov [DOE]

      On October 22, 1996, Rice Oil Company, Inc. (Rice) of Greenfield, Massachusetts filed an Application for Exception with the Office of Hearings and Appeals (OHA) of the Department of Energy (DOE)....

    10. MetaMEME: Motifbased Hidden Markov Models of Protein Families

      E-Print Network [OSTI]

      Bailey, Timothy L.

      Meta­MEME: Motif­based Hidden Markov Models of Protein Families William N. Grundy \\Lambda bgrundy. These motif­based HMMs consist primarily of motif models generated by MEME (Multiple EM for Motif Elicitation to being trainable from smaller data sets, motif­based HMMs are well suited for recognizing distant

    11. Zinc Oxide and Nitride Nanowire Based Light Emitting Diodes

      E-Print Network [OSTI]

      Lai, Elaine Michelle

      2009-01-01

      b) P-N junction, and c) N-P-N junction.junction, b) P-N junction, and c) N-P-N junction From theseinterface traps at the p and n junction, and defect traps in

    12. Striatins as plaque molecules of zonulae adhaerentes in simple epithelia, of tessellate junctions in stratified epithelia, of cardiac composite junctions and of various size classes of lateral adherens junctions in cultures of epithelia- and carcinoma-derived cells

      E-Print Network [OSTI]

      Franke, Werner W.

      Proteins of the striatin family (striatins 1–4; sizes ranging from 90 to 110 kDa on SDS-polyacrylamide gel electrophoresis) are highly homologous in their amino acid sequences but can differ in their cell-type-specific ...

    13. InGaAsP/InP intrastep quantum wells for enhanced solar energy conversion

      E-Print Network [OSTI]

      Chen, Winnie Victoria

      2012-01-01

      multi-junction solar cells .mismatch of multi-junction solar cells……………… Figure 3-2matching of multi-junction solar cells A multi-junction

    14. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

      SciTech Connect (OSTI)

      Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

      2010-10-14

      The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

    15. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

      E-Print Network [OSTI]

      Mariani, Giacomo

      2013-01-01

      W. , Dunlop, E.D. Solar cell efficiency table (version 42),W. , Dunlop, E.D. Solar cell efficiency table (version 42),W. , Dunlop, E.D. Solar cell efficiency table (version 42),

    16. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

      SciTech Connect (OSTI)

      Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

      2014-08-11

      Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

    17. Ultrastructural analysis of chemical synapses and gap junctions between Drosophila brain neurons in culture.

      E-Print Network [OSTI]

      Oh, Hyun-Woo; Campusano, Jorge M; Hilgenberg, Lutz G W; Sun, Xicui; Smith, Martin A; O'Dowd, Diane K

      2008-01-01

      h. Cells were contrasted in 1% uranyl acetate at RT for 1 h,were stained again in 2% uranyl acetate for 2 min, followedthe omission of the ?rst uranyl acetate staining. After thin

    18. Vortex detection and quantum transport in mesoscopic graphene Josephson junction arrays

      E-Print Network [OSTI]

      Richardson, C. L.; Edkins, S. D.; Berdiyorov, G. R.; Chua, C. J.; Griffiths, J. P.; Jones, G. A. C.; Buitelaar, M. R.; Narayan, V.; Sfigakis, F.; Smith, C. G.; Covaci, L.; Connolly, M. R.

      2015-06-15

      . Phys., 4, 7144–148 (2008). 21 Katsuyoshi Komatsu, Chuan Li, S. Autier-Laurent, H. Bouchiat, and S. Gue´ron. Phys. Rev. B, 86, 115412 (2012). 22 M. Tinkham. Introduction to Superconductivity. Dover Publications, 2nd ed. edition (2004). 23 A. K. Geim, I...

    19. Conductance and Geometry of Pyridine-Linked Single-Molecule Junctions

      E-Print Network [OSTI]

      UniVersity, New York, New York 10027, The Molecular Foundry, Lawrence Berkeley National Laboratory. § The Molecular Foundry, Lawrence Berkeley National Laboratory. | Department of Chemistry, Columbia University

    20. Atomically Wired Molecular Junctions: Connecting a Single Organic Molecule by Chains of Metal Atoms

      E-Print Network [OSTI]

      Tal, Oren

      covered by 100µm insulating Kapton film). The substrate is bent in cryogenic vacuum in order to break, were introduced into the cryogenic environment via a heated capillary 1 . Before each experimental by several freeze-pump-thaw cycles. In the case of naphthalene and anthracene the degassing was done by three

    1. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

      E-Print Network [OSTI]

      Mariani, Giacomo

      2013-01-01

      for efficient photovoltaic cells, Nat. Nanotechnol. 6, 568-for efficient photovoltaic cells, Nat. Nanotechnol. 6, 568-trapping in thin-film photovoltaic cells, Opt. Express 8,

    2. Charge transport in molecular junctions: From tunneling to hopping with the probe technique

      E-Print Network [OSTI]

      Kilgour, Michael

      2015-01-01

      We demonstrate that a simple phenomenological approach can be used to simulate electronic conduction in molecular wires under thermal effects induced by the surrounding environment. This "Landauer-B\\"uttiker's probe technique" can properly replicate different transport mechanisms: phase coherent nonresonant tunneling, ballistic behavior, and hopping conduction, to provide results consistent with experiments. Specifically, our simulations with the probe method recover the following central characteristics of charge transfer in molecular wires: (i) The electrical conductance of short wires falls off exponentially with molecular length, a manifestation of the tunneling (superexchange) mechanism. Hopping dynamics overtakes superexchange in long wires demonstrating an ohmic-like behavior. (ii) In off-resonance situations, weak dephasing effects facilitate charge transfer. Under large dephasing the electrical conductance is suppressed. (iii) At high enough temperatures, $k_BT/\\epsilon_B>1/25$, with $\\epsilon_B$ as ...

    3. Electrical design optimization of single-mode tunnel-junction-based long-wavelength VCSELs

      E-Print Network [OSTI]

      Mehta, M; Feezell, D; Buell, D A; Jackson, A W; Coldren, L A; Bowers, J E

      2006-01-01

      Moreover, the mature growth technology associated with thematerials growth and fabrication technology. He is now

    4. Structure and tectonics of the Sumatra Fault Zone-Sundra Trench junction 

      E-Print Network [OSTI]

      Handayani, Lina

      1999-01-01

      The Sunda French marks the subjection zone of Indian-Australian plate beneath the Eurasian plate. Due to the geometry of the Eurasian plate, the convergence is normal towards Java and oblique towards Sumatra. A major zone of dextral strike slip...

    5. Influence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions

      E-Print Network [OSTI]

      Schroder, Dieter K.

      generation in the near-surface end-of-range damaged layer enhanced by trap-assisted tunneling. The reduced increase for USJs formed in halo-implanted profiles is explained by high electron and hole recombination should be addressed; electronic mail: vladimirf@frontiersemi.com 1588 1588J. Vac. Sci. Technol. B 25

    6. Energy Decay in Superconducting Josephson-Junction Qubits from Nonequilibrium Quasiparticle Excitations

      E-Print Network [OSTI]

      Martinis, John M.

      engineered gap and trap structures, which reduce the density of quasiparticles, should be redesigned on tunneling of nonequilibrium quasiparticles, we next calculate their density versus en- ergy from standard electron-phonon rates, showing the injection energy is unimportant. Third, we estimate quasi- particle

    7. Self-localized domain walls at -conjugated branching junctions Yongwoo Shin and Xi Lin

      E-Print Network [OSTI]

      Lin, Xi

      's Fermi liquid theory.1 These quasi-particles in conducting polymers, however, are subject to intrinsic, leading to the formation of self- localized charge carriers.2 These phonon-screened charge car- riers the translationally invariant Goldstone mode,5 the am- plitude oscillation mode,3 and a series of other higher order

    8. Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study

      E-Print Network [OSTI]

      Webb, Roger P.

      Kingdom Roger P. Webb Department of Electronic and Electrical Engineering, University of Surrey, Guildford of a family of around thirty boron hydrides6 but the advantage of this particular B cluster

    9. Junction adhesion molecule expression influences hematopoietic and endothelial commitment of murine embryonic stem cells

      E-Print Network [OSTI]

      Stankovich, Basha Lorraine

      2009-01-01

      Collagen 4a Cx31 Cx43 Cx45 DDR E-Cad ICAM1 Integrin, b4Collagen 4a Cx31 Cx43 Cx45 DDR E- Cad ICAM1 Laminin A1 LIFR

    10. RF Model of Lateral Bipolar Junction Transistor on Silicon-on-Insulator Substrate

      E-Print Network [OSTI]

      Ng, Wai Tung

      -Shan Michael Sun and Wai Tung Ng Abstract- A methodology for modelling a novel high- frequency lateral bipolar, I-Shan Michael Sun and Wai Tung Ng are with the Department of Electrical and Computer Engineering-poly stack encircling the collector, and the emitter surrounding the base. The 3D structure on SOI creates

    11. Electrical properties of pn junctions based on superlattices of AlNAlGa,,In...N

      E-Print Network [OSTI]

      Holtz, Mark

      and 280 nm would open a number of applications, from fluorescence excitation to data storage. Despite- tures were grown on sapphire using gas source molecular beam epitaxy12 with ammonia. The samples were

    12. Experimental demonstration of a magnetic bipolar junction transistor E. Johnston-Halperin*a

      E-Print Network [OSTI]

      Flatte, Michael E.

      , University of Iowa, Iowa City, IA 52242; c Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA ABSTRACT The field of semiconductor spintronics has pursued a critical step in the development of an active spin functional device architecture. Keywords: spintronics

    13. Large magnetoresistance from long-range interface coupling in armchair graphene nanoribbon junctions

      SciTech Connect (OSTI)

      Li, Suchun; Son, Young-Woo; Quek, Su Ying

      2014-12-15

      In recent years, bottom-up synthesis procedures have achieved significant advancements in atomically controlled growth of several-nanometer-long graphene nanoribbons with armchair-shaped edges (AGNRs). This greatly encourages us to explore the potential of such well-defined AGNRs in electronics and spintronics. Here, we propose an AGNR based spin valve architecture that induces a large magnetoresistance up to 900%. We find that, when an AGNR is connected perpendicularly to zigzag-shaped edges, the AGNR allows for long-range extension of the otherwise localized edge state. The huge magnetoresistance is a direct consequence of the coupling of two such extended states from both ends of the AGNR, which forms a perfect transmission channel. By tuning the coupling between these two spin-polarized states with a magnetic field, the channel can be destroyed, leading to an abrupt drop in electron transmission.

    14. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

      E-Print Network [OSTI]

      Mariani, Giacomo

      2013-01-01

      silicon nanowires as solar cells and nanoelectronic powerTowards efficient hybrid solar cells based on fully polymerSariciftci, N. S. Hybrid solar cells, Inorg. Chim. Acta 361,

    15. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

      E-Print Network [OSTI]

      Mariani, Giacomo

      2013-01-01

      Towards efficient hybrid solar cells based on fully polymerS. , Sariciftci, N. S. Hybrid solar cells, Inorg. Chim. ActaY. , Warta, W. , Dunlop, E.D. Solar cell efficiency table (

    16. Resonant plasmon scattering by discrete breathers in Josephson junction ladders A. E. Miroshnichenko,1

      E-Print Network [OSTI]

      the resonant vanishing of the transmission coefficient. We propose an experimental setup of detecting in the dy- namics of dusty plasma crystals.9 In the transmission problem of small amplitude waves homogeneous dc bias. The aim of this paper is to investigate the possibility for the observation of Fano

    17. Phase qubits fabricated with trilayer junctions M. Weides1,2

      E-Print Network [OSTI]

      Martinis, John M.

      1. Introduction The energy relaxation time T1 of superconducting qubits is affected by dielectric- to several microseconds, depending on qubit type, material, and device layout. Superconducting qubits, being central to any superconducting qubit, we aim to analyze the loss contributions of this specific

    18. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

      E-Print Network [OSTI]

      Mariani, Giacomo

      2013-01-01

      Towards efficient hybrid solar cells based on fully polymerSariciftci, N. S. Hybrid solar cells, Inorg. Chim. Acta 361,radial GaAs nanopillar solar cells, Nano Lett. 11, 2490-

    19. Effects of Angiopoietin-2-Blocking Antibody on Endothelial Cell–Cell Junctions and Lung Metastasis

      E-Print Network [OSTI]

      Tammela, Tuomas

      Background: Angiopoietin-2 (Ang2), a ligand for endothelial TEK (Tie2) tyrosine kinase receptor, is induced in hypoxic endothelial cells of tumors, where it promotes tumor angiogenesis and growth. However, the effects of ...

    20. Defining a Link between Gap Junction Communication, Proteolysis, and Cataract Formation*

      E-Print Network [OSTI]

      Bogyo, Matthew

      Research Institute, La Jolla, California 92037 Disruption of the connexin 3 (Cx46) gene ( 3 ( / )) in mice express 1 (Cx43)1 connexin; fiber cells express 3 (Cx46) and 8 (Cx50) connexin (5, 6). In order). Dis- ruption of the 3 (Cx46) or 8 (Cx50) genes gives rise to distinct phenotypes; 8 ablation in mice