National Library of Energy BETA

Sample records for junction adjacent layers

  1. Semiconductor tunnel junction with enhancement layer

    DOE Patents [OSTI]

    Klem, John F.; Zolper, John C.

    1997-01-01

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

  2. Semiconductor tunnel junction with enhancement layer

    DOE Patents [OSTI]

    Klem, J.F.; Zolper, J.C.

    1997-10-21

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.

  3. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    DOE Patents [OSTI]

    Chang, Y. Austin; Yang, Jianhua Joshua

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  4. Electron transport in molecular junctions with graphene as protecting layer

    SciTech Connect (OSTI)

    Hüser, Falco; Solomon, Gemma C.

    2015-12-07

    We present ab initio transport calculations for molecular junctions that include graphene as a protecting layer between a single molecule and gold electrodes. This vertical setup has recently gained significant interest in experiment for the design of particularly stable and reproducible devices. We observe that the signals from the molecule in the electronic transmission are overlayed by the signatures of the graphene sheet, thus raising the need for a reinterpretation of the transmission. On the other hand, we see that our results are stable with respect to various defects in the graphene. For weakly physiosorbed molecules, no signs of interaction with the graphene are evident, so the transport properties are determined by offresonant tunnelling between the gold leads across an extended structure that includes the molecule itself and the additional graphene layer. Compared with pure gold electrodes, calculated conductances are about one order of magnitude lower due to the increased tunnelling distance. Relative differences upon changing the end group and the length of the molecule on the other hand, are similar.

  5. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOE Patents [OSTI]

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  6. Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer

    SciTech Connect (OSTI)

    Cuchet, La; Rodmacq, Bernard; Auffret, Stphane; Sousa, Ricardo C.; Prejbeanu, Ioan L.; Dieny, Bernard

    2015-06-21

    The magnetic properties of double tunnel junctions with perpendicular anisotropy were investigated. Two synthetic antiferromagnetic references are used, while the middle storage magnetic layer can be either a single ferromagnetic or a synthetic antiferromagnetic FeCoB-based layer, with a critical thickness as large as 3.0?nm. Among the different achievable magnetic configurations in zero field, those with either antiparallel references, and single ferromagnetic storage layer, or parallel references, and synthetic antiferromagnetic storage layer, are of particular interest since they allow increasing the efficiency of spin transfer torque writing and the thermal stability of the stored information as compared to single tunnel junctions. The latter configuration can be preferred when stray fields would favour a parallel orientation of the reference layers. In this case, the synthetic antiferromagnetic storage layer is also less sensitive to residual stray fields.

  7. Methods for the fabrication of thermally stable magnetic tunnel junctions

    DOE Patents [OSTI]

    Chang, Y. Austin; Yang, Jianhua J.; Ladwig, Peter F.

    2009-08-25

    Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.

  8. Spin orbital torque driven magnetization switching in magnetic tunnel junction with inter-layer exchange coupling

    SciTech Connect (OSTI)

    Xu, Lei; Ma, Zhongshui; Wei, Dan

    2015-01-14

    The switching processes of elliptically shaped magnetic tunnel junction bits with the structure Ta/CoFeB/MgO/CoFeB have been studied by the micromagnetic models. By comparing the tunneling magneto-resistance minor and major loops calculated by our model with related experimental results, we found that the inter-layer exchange coupling between the two CoFeB layers and a reduced saturation magnetization M{sub s} distribution at the edge of the elliptical bit should be included. The chosen strength of the inter-layer exchange coupling also matches well with experimental observations. The current induced magnetization switching is generated from the spin Hall effect in the Ta layer. The critical switching currents calculated by our model are coincident with experiment. This shows the reliability of our micromagnetic model with the spin orbital torque term.

  9. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    SciTech Connect (OSTI)

    Honjo, H. Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T.; Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N.; Ishihara, K.; Ohno, H.

    2014-05-07

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

  10. Nanotube junctions

    DOE Patents [OSTI]

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon Sheng; Zettl, Alexander Karlwalter

    2003-01-01

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  11. Nanotube junctions

    DOE Patents [OSTI]

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon; Zettl, Alexander Karlwalte

    2004-12-28

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  12. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    SciTech Connect (OSTI)

    Elliot, Alan J. E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z. E-mail: jwu@ku.edu; Yu, Haifeng; Zhao, Shiping

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ?1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  13. Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices

    SciTech Connect (OSTI)

    Entani, Shiro Naramoto, Hiroshi; Sakai, Seiji

    2015-05-07

    Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.

  14. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    SciTech Connect (OSTI)

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Zhang, Yong-Hang; Landini, Barbara; Campman, Ken

    2014-05-28

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300?nm thick GaAs absorber, combined with a 5??m thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00?V, short-circuit current densities (J{sub sc}) up to 24.5?mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6?mA/cm{sup 2} and 20.7%, respectively.

  15. Tuning the thickness of electrochemically grafted layers in large area molecular junctions

    SciTech Connect (OSTI)

    Fluteau, T.; Bessis, C.; Barraud, C. Della Rocca, M. L.; Lafarge, P.; Martin, P.; Lacroix, J.-C.

    2014-09-21

    We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 227 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

  16. Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film

    SciTech Connect (OSTI)

    Takenaga, Takashi Tsuzaki, Yosuke; Yoshida, Chikako; Yamazaki, Yuichi; Hatada, Akiyoshi; Nakabayashi, Masaaki; Iba, Yoshihisa; Takahashi, Atsushi; Noshiro, Hideyuki; Tsunoda, Koji; Aoki, Masaki; Furukawa, Taisuke; Fukumoto, Hiroshi; Sugii, Toshihiro

    2014-05-07

    We evaluated MgO-based magnetic tunnel junctions (MTJs) for magnetic field sensors with spin-valve-type structures in the CoFeB sensing layer capped by an MgO film in order to obtain both top and bottom interfaces of MgO/CoFeB exhibiting interfacial perpendicular magnetic anisotropy (PMA). Hysteresis of the CoFeB sensing layer in these MTJs annealed at 275?C was suppressed at a thickness of the sensing layer below 1.2?nm by interfacial PMA. We confirmed that the CoFeB sensing layers capped with MgO suppress the thickness dependences of both the magnetoresistance ratio and the magnetic behaviors of the CoFeB sensing layer more than that of the MTJ with a Ta capping layer. MgO-based MTJs with MgO capping layers can improve the controllability of the characteristics for magnetic field sensors.

  17. Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

    SciTech Connect (OSTI)

    Guo, P.; Yu, G. Q.; Wei, H. X.; Han, X. F. E-mail: xfhan@aphy.iphy.ac.cn; Li, D. L.; Feng, J. F. E-mail: xfhan@aphy.iphy.ac.cn; Kurt, H.; Chen, J. Y.; Coey, J. M. D.

    2014-10-21

    Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d²I/dV², and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E{sub C} derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process, opening an additional conductance channel and thus enhancing the total conductance.

  18. A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer

    SciTech Connect (OSTI)

    Zhu, M. Chong, H.; Vu, Q. B.; Vo, T.; Brooks, R.; Stamper, H.; Bennett, S.; Piccirillo, J.

    2015-05-25

    We report a stack structure which utilizes an in-plane exchange-biased magnetic layer to influence the coercivity of the bottom CoFeB layer in a CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction. By employing a thickness wedge deposition technique, we were able to study various aspects of this stack using vibrating sample magnetometer including: (1) the coupling between two CoFeB layers as a function of MgO thickness; and (2) the coupling between the bottom CoFeB and the in-plane magnetic layer as a function of Ta spacer thickness. Furthermore, modification of the bottom CoFeB coercivity allows one to measure tunneling magnetoresistance and resistance-area product (RA) of CoFeB/MgO/CoFeB in this pseudo-spin-valve format using current-in-plane-tunneling technique, without resorting to (Co/Pt){sub n} or (Co/Pd){sub n} multilayer pinning.

  19. Josephson junction

    DOE Patents [OSTI]

    Wendt, J.R.; Plut, T.A.; Martens, J.S.

    1995-05-02

    A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material. 10 figs.

  20. Josephson junction

    DOE Patents [OSTI]

    Wendt, Joel R.; Plut, Thomas A.; Martens, Jon S.

    1995-01-01

    A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material.

  1. Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

    SciTech Connect (OSTI)

    Atwater, H. A.

    2008-11-01

    We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

  2. Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based magnetic tunneling junctions

    SciTech Connect (OSTI)

    Chae, Kyo-Suk; Park, Jea-Gun

    2015-04-21

    For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer. Thus, the TMR ratio peaked at t{sub Fe} = 0.4 nm: i.e., 120% at 29 Ωμm{sup 2}.

  3. Multi-junction solar cell device

    DOE Patents [OSTI]

    Friedman, Daniel J.; Geisz, John F.

    2007-12-18

    A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

  4. High voltage series connected tandem junction solar battery

    DOE Patents [OSTI]

    Hanak, Joseph J.

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  5. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-02-12

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013more » e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. As a result, the ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.« less

  6. Tandem junction amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J.

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  7. Solar Junction | Open Energy Information

    Open Energy Info (EERE)

    Junction Jump to: navigation, search Name: Solar Junction Place: San Jose, California Zip: CA 95131 Sector: Efficiency, Solar Product: Solar Junction is developing high efficiency...

  8. DOE - Office of Legacy Management -- Grand Junction Sites

    Office of Legacy Management (LM)

    Grand Junction Sites Grand Junction Sites gjmap Grand Junction Disposal Site Grand Junction Processing Site Grand Junction Site Contact Us

  9. Complementary junction heterostructure field-effect transistor

    DOE Patents [OSTI]

    Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

    1995-12-26

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

  10. Complementary junction heterostructure field-effect transistor

    DOE Patents [OSTI]

    Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

    1995-01-01

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

  11. In the OSTI Collections: Josephson Junctions | OSTI, US Dept...

    Office of Scientific and Technical Information (OSTI)

    ... in ferromagnetic Josephson junctions"DoE PAGES. (a) A niobium base layer 150 nanometers thick. (b) A niobium-aluminum-niobium-gold multilayer stack 87.4 nanometers thick. ...

  12. Method for shallow junction formation

    DOE Patents [OSTI]

    Weiner, K.H.

    1996-10-29

    A doping sequence is disclosed that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated. 8 figs.

  13. Method for shallow junction formation

    DOE Patents [OSTI]

    Weiner, Kurt H.

    1996-01-01

    A doping sequence that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated.

  14. Three-junction solar cell

    DOE Patents [OSTI]

    Ludowise, Michael J. (Cupertino, CA)

    1986-01-01

    A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

  15. Low temperature junction growth using hot-wire chemical vapor deposition

    SciTech Connect (OSTI)

    Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

    2014-02-04

    A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

  16. Field-effect P-N junction

    DOE Patents [OSTI]

    Regan, William; Zettl, Alexander

    2015-05-05

    This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

  17. Selective niobium anodization process for fabricating Josephson tunnel junctions

    SciTech Connect (OSTI)

    Kroger, H.; Smith, L.N.; Jillie, D.W.

    1981-08-01

    A novel process for fabricating refractory sperconducting tunnel junctions is described, which is useful with both deposited and native oxide barriers. The distinguishing feature of the method is that the entire superconductor-barrier-superconductor sandwich is formed before the patterning of any layer. Isolated Josephson junctions are then formed by anodizing through the upper electrode, while the devices themselves are protected by a photoresist mask. Using this process, Nb-Si:H-Nb junctions have been fabricated, whose product of critical current and subgap resistance exceeds 10 mV and whose critical current density varies by about 50% over a 2-in. diameter wafer.

  18. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  19. Enhancement of tunnel magnetoresistance in magnetic tunnel junction by a superlattice barrier

    SciTech Connect (OSTI)

    Chen, C. H.; Hsueh, W. J.

    2014-01-27

    Tunnel magnetoresistance of magnetic tunnel junction improved by a superlattice barrier composed of alternate layers of a nonmagnetic metal and an insulator is proposed. The forbidden band of the superlattice is used to predict the low transmission range in the superlattice barrier. By forbidding electron transport in the anti-parallel configuration, the tunnel magnetoresistance is enhanced in the superlattice junction. The results show that the tunnel magnetoresistance ratio for a superlattice magnetic tunnel junction is greater than that for traditional single or double barrier junctions.

  20. A way for studying the impact of PEDOT:PSS interface layer on carrier transport in PCDTBT:PC{sub 71}BM bulk hetero junction solar cells by electric field induced optical second harmonic generation measurement

    SciTech Connect (OSTI)

    Ahmad, Zubair Abdullah, Shahino Mah; Sulaiman, Khaulah; Taguchi, Dai; Iwamoto, Mitsumasa

    2015-04-28

    Electric-field-induced optical second-harmonic generation (EFISHG) measurement was employed to study the impact of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS) interface layer on the carrier transport mechanism of the PCDTBT:PC{sub 71}BM bulk heterojunction (BHJ) organic solar cells (OSCs). We revealed that the electric fields in the PCDTBT and PC{sub 71}BM were allowed to be measured individually by choosing fundamental laser wavelengths of 1000 nm and 1060 nm, respectively, in dark and under illumination. The results showed that the direction of the internal electric fields in the PCDTBT:PC{sub 71}BM BHJ layer is reversed by introducing the PEDOT:PSS layer, and this results in longer electron transport time in the BHJ layer. We conclude that TR-EFISHG can be used as a novel way for studying the impact of interfacial layer on the transport of electrons and holes in the bulk-heterojunction OSCs.

  1. Highly Charged Ion (HCI) Modified Tunnel Junctions

    SciTech Connect (OSTI)

    Pomeroy, J. M.; Grube, H. [Atomic Physics Division, National Institute of Standards and Technology (NIST) 100 Bureau Dr., MS 8423, Gaithersburg, MD 20899-8423 (United States)

    2009-03-10

    The neutralization energy carried by highly charged ions (HCIs) provides an alternative method for localizing energy on a target's surface, producing features and modifying surfaces with fluences and kinetic energy damage that are negligible compared to singly ionized atoms. Since each HCI can deposit an enormous amount of energy into a small volume of the surface (e.g., Xe{sup 44+} delivers 51 keV of neutralization energy per HCI), each individual HCI's interaction with the target can produce a nanoscale feature. Many studies of HCI-surface features have characterized some basic principles of this unique ion-surface interaction, but the activity reported here has been focused on studying ensembles of HCI features in ultra-thin insulating films by fabricating multi-layer tunnel junction devices. The ultra-thin insulating barriers allow current to flow by tunneling, providing a very sensitive means of detecting changes in the barrier due to highly charged ion irradiation and, conversely, HCI modification provides a method of finely tuning the transparency of the tunnel junctions that spans several orders of magnitude for devices produced from a single process recipe. Systematic variation of junction bias, temperature, magnetic field and other parameters provides determination of the transport mechanism, defect densities, and magnetic properties of these nano-features and this novel approach to device fabrication.

  2. Layered seal for turbomachinery

    DOE Patents [OSTI]

    Sarawate, Neelesh Nandkumar; Morgan, Victor John; Weber, David Wayne

    2015-11-20

    The present application provides seal assemblies for reducing leakages between adjacent components of turbomachinery. The seal assemblies may include outer shims, and at least a portion of the outer shims may be substantially impervious. At least one of the outer shims may be configured for sealing engagement with seal slots of the adjacent components. The seal assemblies may also include at least one of an inner shim and a filler layer positioned between the outer shims. The at least one inner shim may be substantially solid and the at least one filler layer may be relatively porous. The seal assemblies may be sufficiently flexible to account for misalignment between the adjacent components, sufficiently stiff to meet assembly requirements, and sufficiently robust to operating meet requirements associated with turbomachinery.

  3. High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

    DOE Patents [OSTI]

    Ginley, David S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.; Martens, Jon S.; Plut, Thomas A.; Tigges, Chris P.; Vawter, Gregory A.; Zipperian, Thomas E.

    1994-10-25

    A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

  4. High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

    DOE Patents [OSTI]

    Ginley, D.S.; Hietala, V.M.; Hohenwarter, G.K.G.; Martens, J.S.; Plut, T.A.; Tigges, C.P.; Vawter, G.A.; Zipperian, T.E.

    1994-10-25

    A process is disclosed for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO[sub 3] crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O[sub 3], followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry. 8 figs.

  5. Junction Hilltop Wind | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name Junction Hilltop Wind Facility Junction Hilltop Wind Sector Wind energy Facility Type Community Wind Facility Status In Service Owner Community Owned...

  6. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    DOE Patents [OSTI]

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  7. Multi-layer seal for electrochemical devices

    DOE Patents [OSTI]

    Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

    2010-09-14

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  8. Multi-layer seal for electrochemical devices

    DOE Patents [OSTI]

    Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

    2010-11-16

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  9. Advanced materials development for multi-junction monolithic photovoltaic devices

    SciTech Connect (OSTI)

    Dawson, L.R.; Reno, J.L.

    1996-07-01

    We report results in three areas of research relevant to the fabrication of monolithic multi-junction photovoltaic devices. (1) The use of compliant intervening layers grown between highly mismatched materials, GaAs and GaP (same lattice constant as Si), is shown to increase the structural quality of the GaAs overgrowth. (2) The use of digital alloys applied to the MBE growth of GaAs{sub x}Sb{sub l-x} (a candidate material for a two junction solar cell) provides increased control of the alloy composition without degrading the optical properties. (3) A nitrogen plasma discharge is shown to be an excellent p-type doping source for CdTe and ZnTe, both of which are candidate materials for a two junction solar cell.

  10. Josephson junction Q-spoiler

    DOE Patents [OSTI]

    Clarke, John; Hilbert, Claude; Hahn, Erwin L.; Sleator, Tycho

    1988-01-01

    An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

  11. Josephson junction Q-spoiler

    DOE Patents [OSTI]

    Clarke, J.; Hilbert, C.; Hahn, E.L.; Sleator, T.

    1986-03-25

    An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

  12. Grand Junction Office Founder Honored...

    Energy Savers [EERE]

    4 Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park Dedication and Open House The U.S. Department of Energy (DOE) Offce of Legacy Management (LM) held an ...

  13. Electronic thermometry in tunable tunnel junction

    DOE Patents [OSTI]

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  14. Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

    DOE Patents [OSTI]

    Hawkins, G.A.; Clarke, J.

    1975-10-31

    A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

  15. Annual Inspection of the Grand Junction, Colorado, Site

    Office of Legacy Management (LM)

    6 Annual Inspection - Grand Junction, Colorado, Office Site April 2016 Page 1 Annual Inspection of the Grand Junction, Colorado, Site 1.1 Inspection Summary The Grand Junction, ...

  16. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-01-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  17. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  18. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming

    2010-02-23

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  19. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming; Liao, Xianbo; Du, Wenhui

    2011-10-04

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  20. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming; Liao, Xianbo; Du, Wenhui

    2011-02-01

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  1. Grand Junction, Colorado, Site Fact Sheet

    Office of Legacy Management (LM)

    D D&D Page 1 of 3 Fact Sheet Grand Junction, Colorado, Site This fact sheet provides information about the Grand Junction, Colorado, Site. This site is managed by the U.S. ...

  2. Transport and magnetization current in a thin layer of Bi{sub 1.8}Pb{sub 0.4}Sr{sub 2.0}Ca{sub 2.2}Cu{sub 3.0}O{sub y} adjacent to silver sheathing in BSCCO-2223 tapes

    SciTech Connect (OSTI)

    Lelovic, M.; Krishnaraj, P.; Deis, T.

    1995-07-01

    The thin superconducting region next to the silver sheath appears to be the region of high critical current density in BSCCO-2223 tapes. Transport current measurements on Bi{sub 1.8}Pb{sub 0.4}Sr{sub 2.0}Ca{sub 2.2}Cu{sub 3.0}O{sub y} tape at 77 K in a low magnetic field applied parallel to the tape thickness indicate an exponential field dependence [J / J{sub c} {proportional_to} exp (- B / B{sub 0})] for transport currents. Magnetic hysteresis was measured in a 10-{mu}m-thick layer of superconductor near the silver sheath as a function of temperature, intensity, and orientation of applied field with respect to the tape. The characteristic field for full penetration depth, B*, for a superconducting slab was found to have a power law dependence on temperature. Magnetization currents as a function of temperature and applied field oriented parallel to the tape thickness, J{sub c,m}(B,T), were determined from the magnetization loop width with a Bean- model expression adapted for an orthorhombic sample. The critical-state model, adjusted for scaling and magnetic relaxation, correlates well with the magnetization current of the thin layer at 77 K.

  3. DOE Grand Junction Projects Office Edgemont LTSP

    Office of Legacy Management (LM)

    DOE Grand Junction Projects Office Edgemont LTSP June 1996 Page ii Contents Page 1.0 Introduction ......

  4. Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

    SciTech Connect (OSTI)

    Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.; Fringer, Oliver B.; Monismith, Stephen G.

    2014-12-17

    In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Doppler Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.

  5. Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.; Fringer, Oliver B.; Monismith, Stephen G.

    2014-12-17

    In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Dopplermore » Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.« less

  6. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOE Patents [OSTI]

    Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

    2001-01-01

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  7. Irreversible Electroporation Adjacent to the Rectum: Evaluation of Pathological Effects in a Pig Model

    SciTech Connect (OSTI)

    Schoellnast, Helmut [Memorial Sloan-Kettering Cancer Center, Department of Radiology (United States)] [Memorial Sloan-Kettering Cancer Center, Department of Radiology (United States); Monette, Sebastien [Memorial Sloan-Kettering Cancer Center, Weill Cornell Medical College, Rockefeller University, Laboratory of Comparative Pathology (United States)] [Memorial Sloan-Kettering Cancer Center, Weill Cornell Medical College, Rockefeller University, Laboratory of Comparative Pathology (United States); Ezell, Paula C. [Memorial Sloan-Kettering Cancer Center, Weill Cornell Medical College, Rockefeller University, Research Animal Resource Center (United States)] [Memorial Sloan-Kettering Cancer Center, Weill Cornell Medical College, Rockefeller University, Research Animal Resource Center (United States); Single, Gordon [AngioDynamics Inc. (United States)] [AngioDynamics Inc. (United States); Maybody, Majid [Memorial Sloan-Kettering Cancer Center, Department of Radiology (United States)] [Memorial Sloan-Kettering Cancer Center, Department of Radiology (United States); Weiser, Martin R.; Fong Yuman [Memorial Sloan-Kettering Cancer Center, Department of Surgery (United States)] [Memorial Sloan-Kettering Cancer Center, Department of Surgery (United States); Solomon, Stephen B., E-mail: solomons@mskcc.org [Memorial Sloan-Kettering Cancer Center, Department of Radiology (United States)

    2013-02-15

    To evaluate the effects of irreversible electroporation (IRE) on the rectum wall after IRE applied adjacent to the rectum. CT-guided IRE adjacent to the rectum wall was performed in 11 pigs; a total of 44 lesions were created. In five pigs, ablations were performed without a water-filled endorectal coil (group A); in six pigs, ablation was performed with the coil to avoid displacement of the rectum wall (group B). The pigs were killed after 7-15 days and the rectums were harvested for pathological evaluation. There was no evidence of perforation on gross postmortem examination. Perirectal muscle lesions were observed in 18 of 20 ablations in group A and in 21 of 24 ablations in group B. Inflammation and fibrosis of the muscularis propria was observed in ten of 18 lesions in group A and in ten of 21 lesions in group B. In group A, findings were limited to the external layer of the muscularis propria except for one lesion; in group B, findings were transmural in all cases. Transmural necrosis with marked suppurative mucosal inflammation was observed in seven of 21 lesions in group B and in no lesion in group A. IRE-ablation adjacent to the rectum may be uneventful if the rectum wall is mobile and able to contract. IRE-ablation of the rectum may be harmful if the rectum wall is fixed adjacent to the IRE-probe.

  8. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

    DOE Patents [OSTI]

    Albright, Scot P.; Chamberlin, Rhodes R.

    1996-03-26

    A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

  9. Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

    DOE Patents [OSTI]

    Toet, Daniel; Sigmon, Thomas W.

    2005-08-23

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  10. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOE Patents [OSTI]

    Toet, Daniel; Sigmon, Thomas W.

    2003-01-01

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  11. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOE Patents [OSTI]

    Toet, Daniel; Sigmon, Thomas W.

    2004-12-07

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  12. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  13. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  14. Towards understanding junction degradation in cadmium telluride solar cells

    SciTech Connect (OSTI)

    Nardone, Marco

    2014-06-21

    A degradation mechanism in cadmium telluride (CdTe/CdS) solar cells is investigated using time-dependent numerical modeling to simulate various temperature, bias, and illumination stress conditions. The physical mechanism is based on defect generation rates that are proportional to nonequilibrium charge carrier concentrations. It is found that a commonly observed degradation mode for CdTe/CdS solar cells can be reproduced only if defects are allowed to form in a narrow region of the absorber layer close to the CdTe/CdS junction. A key aspect of this junction degradation is that both mid-gap donor and shallow acceptor-type defects must be generated simultaneously in response to photo-excitation or applied bias. The numerical approach employed here can be extended to study other mechanisms for any photovoltaic technology.

  15. Increased magnetic damping of a single domain wall and adjacent magnetic domains detected by spin torque diode in a nanostripe

    SciTech Connect (OSTI)

    Lequeux, Steven; Sampaio, Joao; Bortolotti, Paolo; Cros, Vincent; Grollier, Julie; Matsumoto, Rie; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Nishimura, Kazumasa; Nagamine, Yoshinori; Tsunekawa, Koji

    2015-11-02

    Spin torque resonance has been used to simultaneously probe the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Due to the large associated resistance variations, we are able to analyze quantitatively the resonant properties of these single nanoscale magnetic objects. In particular, we find that the magnetic damping of both the domains and the domain wall is doubled compared to the damping value of the host magnetic layer. We estimate the contributions to the damping arising from the dipolar couplings between the different layers in the junction and from the intralayer spin pumping effect, and find that they cannot explain the large damping enhancement that we observe. We conclude that the measured increased damping is intrinsic to large amplitudes excitations of spatially localized modes or solitons such as vibrating or propagating domain walls.

  16. High thermal conductivity lossy dielectric using a multi layer configuration

    DOE Patents [OSTI]

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-01-01

    Systems and methods are described for loss dielectrics. A loss dielectric includes at least one high dielectric loss layer and at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. A method of manufacturing a loss dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. The systems and methods provide advantages because the loss dielectrics are less costly and more environmentally friendly than the available alternatives.

  17. Thermoelastic response of thin metal films and their adjacent materials

    SciTech Connect (OSTI)

    Kang, S.; Yoon, Y.; Kim, J.; Kim, W.

    2013-01-14

    A pulsed laser beam applied to a thin metal film is capable of launching an acoustic wave due to thermal expansion. Heat transfer from the thin metal film to adjacent materials can also induce thermal expansion; thus, the properties of these adjacent materials (as well as the thin metal film) should be considered for a complete description of the thermoelastic response. Here, we show that adjacent materials with a small specific heat and large thermal expansion coefficient can generate an enhanced acoustic wave and we demonstrate a three-fold increase in the peak pressure of the generated acoustic wave on substitution of parylene for polydimethylsiloxane.

  18. Organic light emitting device having multiple separate emissive layers

    DOE Patents [OSTI]

    Forrest, Stephen R. (Ann Arbor, MI)

    2012-03-27

    An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive layer with the adjacent emissive layers, exciton formation in each layer may be improved. Devices incorporating multiple emissive layers with multiple exciton formation regions may exhibit improved performance, including internal quantum efficiencies of up to 100%.

  19. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  20. Spin and charge transport in double-junction Fe/MgO/GaAs/MgO/Fe heterostructures

    SciTech Connect (OSTI)

    Wolski, S. Szczepa?ski, T.; Dugaev, V. K.; Barna?, J.; Landgraf, B.; Slobodskyy, T.; Hansen, W.

    2015-01-28

    We present theoretical and experimental results on tunneling current in single Fe/MgO/GaAs and double Fe/MgO/GaAs/MgO/Fe tunnel junctions. The charge and spin currents are calculated as a function of external voltage for different sets of parameters characterizing the semiconducting GaAs layer. Transport characteristics of a single Fe/MgO/GaAs junction reveal typical diode as well as spin diode features. The results of numerical calculations are compared with current-voltage characteristics measured experimentally for double tunnel junction structures, and a satisfactory agreement of the theoretical and experimental results has been achieved.

  1. A Model for the Behavior of Magnetic Tunnel Junctions

    SciTech Connect (OSTI)

    Bryan John Baker

    2003-08-05

    A magnetic tunnel junction is a device that changes its electrical resistance with a change in an applied magnetic field. A typical junction consists of two magnetic electrodes separated by a nonmagnetic insulating layer. The magnetizations of the two electrodes can have two possible extreme configurations, parallel and antiparallel. The antiparallel configuration is observed to have the higher measured resistance and the parallel configuration has the lower resistance. To switch between these two configurations a magnetic field is applied to the device which is primarily used to change the orientation of the magnetization of one electrode usually called the free layer, although with sufficient high magnetic field the orientation of the magnetizations of both of the electrodes can be changed. The most commonly used models for describing and explaining the electronic behavior of tunnel junctions are the Simmons model and the Brinkman model. However, both of these models were designed for simple, spin independent tunneling. The Simmons model does not address the issue of applied magnetic fields nor does it address the form of the electronic band structure in the metallic electrodes, including the important factor of spin polarization. The Brinkman model is similar, the main difference between the two models being the shape of the tunneling barrier potential between the two electrodes. Therefore, the research conducted in this thesis has developed a new theoretical model that addresses these important issues starting from basic principles. The main features of the new model include: the development of equations for true spin dependent tunneling through the insulating barrier, the differences in the orientations of the electrode magnetizations on either side of the barrier, and the effects of the density of states function on the behavior of the junction. The present work has explored densities of states that are more realistic than the simplified free electron density

  2. Solar Junction Develops World Record Setting Concentrated Photovoltaic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell Solar Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell April 18, 2013 - ...

  3. Preservationists Tour Historic Log Cabin at the Grand Junction...

    Office of Environmental Management (EM)

    Preservationists Tour Historic Log Cabin at the Grand Junction, Colorado, Office Preservationists Tour Historic Log Cabin at the Grand Junction, Colorado, Office April 19, 2016 - ...

  4. Grand Junction Office Founder Honored at the Philip C. Leahy...

    Office of Environmental Management (EM)

    Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park Dedication and Open House Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park ...

  5. Students from Grand Junction High School Triumph in Colorado...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Grand Junction High School Triumph in Colorado Science Bowl For more information contact: e:mail: Public Affairs Golden, Colo., Feb. 12, 2000 - Students from Grand Junction High ...

  6. Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin...

    Office of Scientific and Technical Information (OSTI)

    Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin Temperatures Title: Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin Temperatures ...

  7. A Monolithic Interconnected module with a tunnel Junction for Enhanced Electrical and Optical Performance

    SciTech Connect (OSTI)

    Murray, Christopher Sean; Wilt, David Morgan

    1999-06-30

    An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMs), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

  8. Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

    DOE Patents [OSTI]

    Murray, Christopher S.; Wilt, David M.

    2000-01-01

    An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

  9. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOE Patents [OSTI]

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  10. Climate change in the four corners and adjacent regions: Implications for environmental restoration and land-use planning

    SciTech Connect (OSTI)

    Waugh, W.J.

    1995-09-01

    This document contains the workshop proceedings on Climate Change in the Four Corners and Adjacent Regions: Implications for Environmental Restoration and Land-Use Planning which took place September 12-14, 1994 in Grand Junction, Colorado. The workshop addressed three ways we can use paleoenvironmental data to gain a better understanding of climate change and its effects. (1) To serve as a retrospective baseline for interpreting past and projecting future climate-induced environmental change, (2) To differentiate the influences of climate and humans on past environmental change, and (3) To improve ecosystem management and restoration practices in the future. The papers presented at this workshop contained information on the following subjects: Paleoclimatic data from the Pleistocene and Holocene epochs, climate change and past cultures, and ecological resources and environmental restoration. Selected papers are indexed separately for inclusion in the Energy Science and Technology Database.

  11. Multi-layer carbon-based coatings for field emission

    DOE Patents [OSTI]

    Sullivan, John P.; Friedmann, Thomas A.

    1998-01-01

    A multi-layer resistive carbon film field emitter device for cold cathode field emission applications. The multi-layered film of the present invention consists of at least two layers of a conductive carbon material, preferably amorphous-tetrahedrally coordinated carbon, where the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure can be a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film can be a plurality of carbon layers, where adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.

  12. Multi-layer carbon-based coatings for field emission

    DOE Patents [OSTI]

    Sullivan, J.P.; Friedmann, T.A.

    1998-10-13

    A multi-layer resistive carbon film field emitter device for cold cathode field emission applications is disclosed. The multi-layered film of the present invention consists of at least two layers of a conductive carbon material, preferably amorphous-tetrahedrally coordinated carbon, where the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure can be a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film can be a plurality of carbon layers, where adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. 8 figs.

  13. Silicon fiber with p-n junction

    SciTech Connect (OSTI)

    Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

    2014-09-22

    In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900??m and core diameters of 20800??m. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

  14. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, Jerry M.; Kurtz, Sarah R.

    1992-01-01

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

  15. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, J.M.; Kurtz, S.R.

    1992-11-24

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

  16. Hydrogenated amorphous silicon barriers for niobium-niobium Josephson junctions

    SciTech Connect (OSTI)

    Kroger, H.; Aucoin, R.; Currier, L.W.; Jillie, D.W.; Potter, C.N.; Shaw, D.W.; Smith, L.N.; Thaxter, J.B.; Willis, P.H.

    1985-03-01

    The authors report on further studies of the effects of hydrogenation of sputtered amorphous silicon barriers upon the current-voltage (I-V) characteristics of Nb-Nb Josephson tunnel junctions. For composite trilayer barriers (a-Si/a-Si:H/a-Si) which are deposited using 8 mT of Ar, we find that there is an abrupt improvement in device characteristics when the central hydrogenated layer is deposited using a hydrogen partial pressure which exceeds about 0.5 mT. They attribute this to the reduction in the density of localized states in the a-Si:H layer. We have observed excellent I-V characteristics with trilayer barrier devices whose central hydrogenated layer is only about 1/7 of the thickness of the entire barrier. This observation suggests that localized states near the geometric center of the barrier are the most significant in degrading device characteristics. Annealing experiments and published data on the diffusion of deuterium in a-Si suggest that the composite barriers will be extremely stable during processing and storage. Zero bias anomalies in device I-V characteristics and spin density in the a-Si and a-Si:H layers have been measured.

  17. Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/

    DOE Patents [OSTI]

    Osbourn, G.C.

    1983-10-06

    An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.

  18. Method for closing a drift between adjacent in situ oil shale retorts

    DOE Patents [OSTI]

    Hines, Alex E.

    1984-01-01

    A row of horizontally spaced-apart in situ oil shale retorts is formed in a subterranean formation containing oil shale. Each row of retorts is formed by excavating development drifts at different elevations through opposite side boundaries of a plurality of retorts in the row of retorts. Each retort is formed by explosively expanding formation toward one or more voids within the boundaries of the retort site to form a fragmented permeable mass of formation particles containing oil shale in each retort. Following formation of each retort, the retort development drifts on the advancing side of the retort are closed off by covering formation particles within the development drift with a layer of crushed oil shale particles having a particle size smaller than the average particle size of oil shale particles in the adjacent retort. In one embodiment, the crushed oil shale particles are pneumatically loaded into the development drift to pack the particles tightly all the way to the top of the drift and throughout the entire cross section of the drift. The closure between adjacent retorts provided by the finely divided oil shale provides sufficient resistance to gas flow through the development drift to effectively inhibit gas flow through the drift during subsequent retorting operations.

  19. Method for closing a drift between adjacent in-situ oil shale retorts

    SciTech Connect (OSTI)

    Hines, A.E.

    1984-04-10

    A row of horizontally spaced-apart in situ oil shale retorts is formed in a subterranean formation containing oil shale. Each row of retorts is formed by excavating development drifts at different elevations through opposite side boundaries of a plurality of retorts in the row of retorts. Each retort is formed by explosively expanding formation toward one or more voids within the boundaries of the retort site to form a fragmented permeable mass of formation particles containing oil shale in each retort. Following formation of each retort, the retort development drifts on the advancing side of the retort are closed off by covering formation particles within the development drift with a layer of crushed oil shale particles having a particle size smaller than the average particle size of oil shale particles in the adjacent retort. In one embodiment, the crushed oil shale particles are pneumatically loaded into the development drift to pack the particles tightly all the way to the top of the drift and throughout the entire cross section of the drift. The closure between adjacent retorts provided by the finely divided oil shale provides sufficient resistance to gas flow through the development drift to effectively inhibit gas flow through the drift during subsequent retorting operations.

  20. SU-E-T-226: Junction Free Craniospinal Irradiation in Linear Accelerator Using Volumetric Modulated Arc Therapy : A Novel Technique Using Dose Tapering

    SciTech Connect (OSTI)

    Sarkar, B; Roy, S; Paul, S; Munshi, A; Roy, Shilpi; Jassal, K; Ganesh, T; Mohanti, BK

    2014-06-01

    Purpose: Spatially separated fields are required for craniospinal irradiation due to field size limitation in linear accelerator. Field junction shits are conventionally done to avoid hot or cold spots. Our study was aimed to demonstrate the feasibility of junction free irradiation plan of craniospinal irradiation (CSI) for Meduloblastoma cases treated in linear accelerator using Volumetric modulated arc therapy (VMAT) technique. Methods: VMAT was planned using multiple isocenters in Monaco V 3.3.0 and delivered in Elekta Synergy linear accelerator. A full arc brain and 40 posterior arc spine fields were planned using two isocentre for short (<1.3 meter height ) and 3 isocentres for taller patients. Unrestricted jaw movement was used in superior-inferior direction. Prescribed dose to PTV was achieved by partial contribution from adjacent beams. A very low dose gradient was generated to taper the isodoses over a long length (>10 cm) at the conventional field junction. Results: In this primary study five patients were planned and three patients were delivered using this novel technique. As the dose contribution from the adjacent beams were varied (gradient) to create a complete dose distribution, therefore there is no specific junction exists in the plan. The junction were extended from 1014 cm depending on treatment plan. Dose gradient were 9.62.3% per cm for brain and 7.91.7 % per cm for spine field respectively. Dose delivery error due to positional inaccuracy was calculated for brain and spine field for 1mm, 2mm, 3mm and 5 mm were 1%0.8%, 2%1.6%, 2.8%2.4% and 4.3%4% respectively. Conclusion: Dose tapering in junction free CSI do not require a junction shift. Therefore daily imaging for all the field is also not essential. Due to inverse planning dose to organ at risk like thyroid kidney, heart and testis can be reduced significantly. VMAT gives a quicker delivery than Step and shoot or dynamic IMRT.

  1. A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

    SciTech Connect (OSTI)

    Hadley, Austin; Ding, George X.

    2014-01-01

    Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup errorinduced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fields and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans.

  2. Method utilizing laser-processing for the growth of epitaxial p-n junctions

    DOE Patents [OSTI]

    Young, R.T.; Narayan, J.; Wood, R.F.

    1979-11-23

    This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

  3. Tectonic mechanisms for formation of the Central Basin platform and adjacent basinal areas, Permian basin, Texas and New Mexico

    SciTech Connect (OSTI)

    Yang, Kennming; Dorobek, S.L. )

    1992-04-01

    Formation of the Central Basin platform (CBP), with the Delaware basin to its west and the Midland basin to its east, has been attributed to the crustal deformation in the foreland area of the Marathon Orogen during the late Paleozoic. Because of complexities in the areal distribution and magnitudes of uplift along the length of the CBP, its formative mechanisms are still controversial. Previous interpretations about the mechanisms for uplift of the CBP are based on the characteristics of the boundary faults between the CBP and adjacent basinal areas. Here, an integrated tectonic model is proposed for formation of the uplift and adjacent basins based on studies of the structure of sedimentary layers overlying Precambrian basement rocks of the uplift and restoration of the lower Paleozoic strata in the Delaware basin.

  4. InGaP/GaAs Inverted Dual Junction Solar Cells For CPV Applications Using Metal-Backed Epitaxial Lift-Off

    SciTech Connect (OSTI)

    Bauhuis, Gerard J.; Mulder, Peter; Haverkamp, Erik J.; Schermer, John J.; Nash, Lee J.; Fulgoni, Dominic J. F.; Ballard, Ian M.; Duggan, Geoffrey

    2010-10-14

    The epitaxial lift-off (ELO) technique has been combined with inverted III-V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO platform we have first grown a GaAs single junction PV cell to establish the basic layer release process and cell processing steps followed by the growth, fabrication and test of an inverted InGaP/GaAs dual junction structure.

  5. Methods for making a multi-layer seal for electrochemical devices

    DOE Patents [OSTI]

    Chou, Yeong-Shyung; Meinhardt, Kerry D.; Stevenson, Jeffry W.

    2007-05-29

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  6. Junction-side illuminated silicon detector arrays

    DOE Patents [OSTI]

    Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

    2004-03-30

    A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

  7. Fluctuation of heat current in Josephson junctions

    SciTech Connect (OSTI)

    Virtanen, P.; Giazotto, F.

    2015-02-15

    We discuss the statistics of heat current between two superconductors at different temperatures connected by a generic weak link. As the electronic heat in superconductors is carried by Bogoliubov quasiparticles, the heat transport fluctuations follow the Levitov–Lesovik relation. We identify the energy-dependent quasiparticle transmission probabilities and discuss the resulting probability density and fluctuation relations of the heat current. We consider multichannel junctions, and find that heat transport in diffusive junctions is unique in that its statistics is independent of the phase difference between the superconductors.

  8. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

    SciTech Connect (OSTI)

    Liu, X.; Zhang, X. W. Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L.

    2014-11-03

    We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

  9. Effect of Dual-Function Nano-Structured Silicon Oxide Thin Film on Multi-Junction Solar Cells

    SciTech Connect (OSTI)

    Yan, B.; Sivec, L.; Yue, G.; Jiang, C. S.; Yang, J.; Guha, S.

    2011-01-01

    We present our recent study of using nano-structured hydrogenated silicon oxide films (nc-SiO{sub x}:H) as a dual-function layer in multi-junction solar cells. The nc-SiO{sub x}:H films were deposited using very high frequency glow discharge of a SiH{sub 4} (or Si{sub 2}H{sub 6}), CO{sub 2}, PH{sub 3}, and H{sub 2} gas mixture. By optimizing deposition parameters, we obtained 'dual function' nc-SiO{sub x}:H material characterized by a conductivity suitable for use as an n layer and optical properties suitable for use as an inter-reflection layer. We tested the nc-SiO{sub x}:H by replacing the normal n-type material in the tunnel junction of a multi-junction structure. The advantage of the dual-function nc-SiO{sub x}:H layer is twofold; one is to simplify the cell structure, and the other is to reduce any optical loss associated with the inter-reflection layer. Quantum efficiency measurements show the gain in top cell current is equal to or greater than the loss in bottom cell current for a-Si:H/nc-Si:H structures. In addition, a thinner a-Si:H top cell with the nc-SiO{sub x}:H n layer improves the top-cell stability, thereby providing higher stabilized solar cell efficiency. We also used the dual-function layer between the middle and the bottom cells in a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. The gain in the middle cell current is {approx}1.0 mA/cm{sup 2}, leading to an initial active-area efficiency of 14.8%.

  10. Grand Junction, Colorado, Processing Site and Disposal Sites Fact Sheet

    Office of Legacy Management (LM)

    Grand Junction, Colorado, Disposal and Processing Sites This fact sheet provides information about the Uranium Mill Tailings Radiation Control Act of 1978 Title I disposal and processing sites at Grand Junction, Colorado. These sites are managed by the U.S. Department of Energy Office of Legacy Management. Locations of the Grand Junction, Colorado, Sites Site Description and History The former Grand Junction processing site, historically known as the Climax uranium mill, sits at an elevation of

  11. Solar Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell

    Broader source: Energy.gov [DOE]

    EERE supported the development of Solar Junction's concentrated photovoltaic technology that set a world record for conversion efficiency.

  12. Multi-terminal magnetotransport measurements over a tunable graphene p-n junction created by AFM-nanomachining

    SciTech Connect (OSTI)

    Schmidt, H.; Smirnov, D.; Rode, J.; Haug, R. J.

    2013-12-04

    An Atomic Force Microscope is used to alter one part of a single layer graphene sample locally. Transport experiments at low temperatures are then used to characterize the different parts independently with field effect and Hall measurements. It is shown, that the nanomachining leads to an effective doping in the altered area and therefore to a difference in the charge carrier density of ?n = 3.5 ? 10{sup 15}m{sup ?2} between the unchanged and changed part. These two parts can be tuned with a global backgate to form a junction of different polarity, i.e. a p-n junction.

  13. Effect of annealing on local composition and electrical transport correlations in MgO-based magnetic tunnel junctions.

    SciTech Connect (OSTI)

    Chiaramonti, A. N.; Schreiber, D. K.; Egelhoff, W. F.; Seidman, D. N.; Petford-Long, A. K.; Materials Science Division; NIST; Northwestern Univ.

    2009-01-01

    The effects of annealing on the electrical transport behavior of CoFe/MgO/CoFe magnetic tunnel junctions have been studied using a combination of site-specific in situ transmission electron microscopy and three-dimensional atom-probe tomography. Annealing leads to an increase in the resistance of the junctions. A shift in the conductance curve (dI/dV) minimum from 0 V for the as-grown specimen correlates with a sharply defined layer of CoFe oxide at the lower ferromagnetic interface. Annealing decreases the asymmetry in the conductance by making the interfaces more diffuse and the tunnel barrier more chemically homogeneous.

  14. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  15. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C.; Shul, Randy J.

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  16. Semiconductor liquid-junction solar cell

    SciTech Connect (OSTI)

    Parkinson, B.A.

    1982-10-29

    A semiconductor liquid junction photocell in which the photocell is in the configuration of a light concentrator and in which the electrolytic solution both conducts current and facilitates the concentration of incident solar radiation onto the semiconductor. The photocell may be in the configuration of a non-imaging concentrator such as a compound parabolic concentrator, or an imaging concentrator such as a lens.

  17. EA-0930: Facility Operations at the U.S. DOE Grand Junction Projects Office, Grand Junction, Colorado

    Office of Energy Efficiency and Renewable Energy (EERE)

    This EA evaluates the environmental impacts of the proposal to expand and upgrade the U.S. Department of Energy's Grand Junction Projects Office facilities and operations in Grand Junction, Colorado.

  18. Corrosion protected, multi-layer fuel cell interface

    DOE Patents [OSTI]

    Feigenbaum, Haim; Pudick, Sheldon; Wang, Chiu L.

    1986-01-01

    An improved interface configuration for use between adjacent elements of a fuel cell stack. The interface is impervious to gas and liquid and provides resistance to corrosion by the electrolyte of the fuel cell. The multi-layer configuration for the interface comprises a non-cupreous metal-coated metallic element to which is film-bonded a conductive layer by hot pressing a resin therebetween. The multi-layer arrangement provides bridging electrical contact.

  19. Organic photosensitive cells having a reciprocal-carrier exciton blocking layer

    DOE Patents [OSTI]

    Rand, Barry P.; Forrest, Stephen R.; Thompson, Mark E.

    2007-06-12

    A photosensitive cell includes an anode and a cathode; a donor-type organic material and an acceptor-type organic material forming a donor-acceptor junction connected between the anode and the cathode; and an exciton blocking layer connected between the acceptor-type organic material of the donor-acceptor junction and the cathode, the blocking layer consisting essentially of a material that has a hole mobility of at least 10.sup.-7 cm.sup.2/V-sec or higher, where a HOMO of the blocking layer is higher than or equal to a HOMO of the acceptor-type material.

  20. Junction conditions in extended Teleparallel gravities

    SciTech Connect (OSTI)

    De la Cruz-Dombriz, lvaro; Dunsby, Peter K.S.; Sez-Gmez, Diego E-mail: peter.dunsby@uct.ac.za

    2014-12-01

    In the context of extended Teleparallel gravity theories, we address the issue of junction conditions required to guarantee the correct matching of different regions of spacetime. In the absence of shells/branes, these conditions turn out to be more restrictive than their counterparts in General Relativity as in other extended theories of gravity. In fact, the general junction conditions on the matching hypersurfaces depend on the underlying theory and a new condition on the induced tetrads in order to avoid delta-like distributions in the field equations. This result imposes strict consequences on the viability of standard solutions such as the Einstein-Straus-like construction. We find that the continuity of the scalar torsion is required in order to recover the usual General Relativity results.

  1. Semiconductor junction formation by directed heat

    DOE Patents [OSTI]

    Campbell, Robert B.

    1988-03-24

    The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.

  2. V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access

    Broader source: Energy.gov [DOE]

    Cisco TelePresence TC and TE Software contain two vulnerabilities in the implementation of the Session Initiation Protocol (SIP) that could allow an unauthenticated remote attacker to cause a denial of service (DoS) condition. Additionally, Cisco TelePresence TC Software contain an adjacent root access vulnerability that could allow an attacker on the same physical or logical Layer-2 network as the affected system to gain an unauthenticated root shell.

  3. DOE - Office of Legacy Management -- Climax Uranium Co Grand Junction Mill

    Office of Legacy Management (LM)

    - CO 0-03 Climax Uranium Co Grand Junction Mill - CO 0-03 FUSRAP Considered Sites Site: Climax Uranium Co. (Grand Junction Mill) (CO.0-03) Licensed to DOE for long-term custody and managed by the Office of Legacy Management. Designated Name: Grand Junction, Colorado, Processing Site Alternate Name: Climax Uranium Company (Grand Junction Mill) Grand Junction Uranium Mill Tailings Remedial Action Site Climax Mill Site Grand Junction Mill 1 Location: Grand Junction, Colorado Evaluation Year:

  4. High Efficiency Amorphous and Microcrystalline Silicon Based Double-Junction Solar Cells made with Very-High-Frequency Glow Discharge

    SciTech Connect (OSTI)

    Banerjee, Arindam

    2004-10-20

    We have achieved a total-area initial efficiency of 11.47% (active-area efficiency of 12.33%) on a-Si:H/?c-Si:H double-junction structure, where the intrinsic layer bottom cell was made in 50 minutes. On another device in which the bottom cell was made in 30 min, we achieved initial total-area efficiency of 10.58% (active-efficiency of 11.35%). We have shown that the phenomenon of ambient degradation of both ?c-Si:H single-junction and a-Si:H/?c-Si:H double-junction cells can be attributed to impurity diffusion after deposition. Optimization of the plasma parameters led to alleviation of the ambient degradation. Appropriate current matching between the top and bottom component cells has resulted in a stable total-area efficiency of 9.7% (active-area efficiency of 10.42%) on an a-Si:H/?c-Si:H double-junction solar cell in which the deposition time for the ?c-Si:H intrinsic layer deposition was of 30 min.

  5. Method of depositing multi-layer carbon-based coatings for field emission

    DOE Patents [OSTI]

    Sullivan, John P.; Friedmann, Thomas A.

    1999-01-01

    A novel field emitter device for cold cathode field emission applications, comprising a multi-layer resistive carbon film. The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials.

  6. Method of depositing multi-layer carbon-based coatings for field emission

    DOE Patents [OSTI]

    Sullivan, J.P.; Friedmann, T.A.

    1999-08-10

    A novel field emitter device is disclosed for cold cathode field emission applications, comprising a multi-layer resistive carbon film. The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials. 8 figs.

  7. Mode-hopping mechanism generating colored noise in a magnetic tunnel junction based spin torque oscillator

    SciTech Connect (OSTI)

    Sharma, Raghav; Drrenfeld, P.; Iacocca, E.; Heinonen, O. G.; kerman, J.; Muduli, P. K.

    2014-09-29

    The frequency noise spectrum of a magnetic tunnel junction based spin torque oscillator is examined where multiple modes and mode-hopping events are observed. The frequency noise spectrum is found to consist of both white noise and 1/f frequency noise. We find a systematic and similar dependence of both white noise and 1/f frequency noise on bias current and the relative angle between the reference and free layers, which changes the effective damping and hence the mode-hopping behavior in this system. The frequency at which the 1/f frequency noise changes to white noise increases as the free layer is aligned away from the anti-parallel orientation w.r.t the reference layer. These results indicate that the origin of 1/f frequency noise is related to mode-hopping, which produces both white noise as well as 1/f frequency noise similar to the case of ring lasers.

  8. Single P-N junction tandem photovoltaic device

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Ager, III, Joel W.; Yu, Kin Man

    2012-03-06

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  9. Single P-N junction tandem photovoltaic device

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Ager, III, Joel W.; Yu, Kin Man

    2011-10-18

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  10. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

    DOE Patents [OSTI]

    Yang, Liyou

    1993-10-26

    A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

  11. Electromagnetic squeezer for compressing squeezable electron tunneling junctions. Technical report

    SciTech Connect (OSTI)

    Moreland, J.; Hansma, P.K.

    1984-01-01

    The resistance of squeezable electron tunnel junctions (SET junctions) can be adjusted with an electromagnetic squeezer. For junctions immersed in liquid helium, the resistance is stable to approximately 0.1%. This stability is sufficient for measurements of superconducting energy gaps and for superconducting phonon spectroscopy out to 50 mV applied bias. Increased stability, especially at higher biases, will be necessary for inelastic electron tunneling spectroscopy.

  12. Electromagnetic squeezer for compressing squeezable electron tunnelling junctions

    SciTech Connect (OSTI)

    Moreland, J.; Hansma, P.K.

    1984-03-01

    The resistance of squeezable electron tunnel junctions (SET junctions) can be adjusted with an electromagnetic squeezer. For junctions immersed in liquid helium, the resistance is stable to approximately 0.1%. This stability is sufficient for measurements of superconducting energy gaps and for superconducting phonon spectroscopy out to 50-mV applied bias. Increased stability, especially at higher biases, will be necessary for inelastic electron tunnelling spectroscopy.

  13. 2012 Annual Inspection Report for the Grand Junction, Colorado, Site

    Office of Legacy Management (LM)

    Annual Inspection - Grand Junction, Colorado, Site March 2012 Page 1 2012 Annual Inspection Report for the Grand Junction, Colorado, Site Summary The Grand Junction, Colorado, Site was inspected on February 23, 2012, and was in excellent condition. Physical and institutional controls enacted at the site continue to be effective in preventing exposure to contamination remaining on the property. A 5-year deficiency-based inspection of all real property assets in compliance with DOE Order 430.1B

  14. 2013 Annual Inspection Report for the Grand Junction, Colorado, Site

    Office of Legacy Management (LM)

    Annual Inspection - Grand Junction, Colorado, Site April 2013 Page 1 2013 Annual Inspection Report for the Grand Junction, Colorado, Site Summary The Grand Junction, Colorado, Site was inspected on March 4, 2013, and was in excellent condition. Physical and institutional controls enacted at the site continue to be effective in preventing exposure to contamination remaining on the property. No cause for a follow-up inspection was identified. 1.0 Introduction This report presents the results of

  15. Annual Inspection of the Grand Junction, Colorado, Site

    Office of Legacy Management (LM)

    Grand Junction, Colorado, Office Site March 2014 Page 1 Annual Inspection of the Grand Junction, Colorado, Site 1.1 Inspection Summary The Grand Junction, Colorado, Site was inspected on February 19, 2014, and was in excellent condition. Physical and institutional controls enacted at the site continue to be effective in preventing exposure to contamination remaining on the property. No maintenance needs were identified and no cause for a follow-up inspection was identified. The site was

  16. Annual Inspection of the Grand Junction, Colorado, Site

    Office of Legacy Management (LM)

    Grand Junction, Colorado, Office Site March 2015 Page 1 Annual Inspection of the Grand Junction, Colorado, Site 1.1 Inspection Summary The Grand Junction, Colorado, Site was inspected on February 18, 2015, and was in good condition. Physical and institutional controls enacted at the site continue to be effective in preventing exposure to contamination remaining on the property. Two minor maintenance needs were identified; however, no cause for a follow-up inspection was identified. The site was

  17. Superconductive tunnel junction device and method of manufacture

    SciTech Connect (OSTI)

    Kroger, H.

    1983-12-20

    A Josephson tunnel junction device having niobium nitride superconductive electrodes includes a polycrystalline semiconductor tunneling barrier therebetween comprised of silicon, germanium, or an alloy thereof preferably deposited on the lower superconductive electrodes by vapor deposition. The barrier thickness of the junction is controlled by precision doping of the semiconductor material. The active junction is defined after the interfaces between the barrier material and the two superconductor lines are formed, retaining those active interfaces in fully unpolluted character.

  18. DNA Gridiron Nanostructures Based on Four-Arm Junctions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DNA Gridiron Nanostructures Based on Four-Arm Junctions Authors: Han, D., Pal, S., Yang, Y., Jiang, S., Nangreave, J., Liu, Y., and Yan, H. Title: DNA Gridiron Nanostructures Based on Four-Arm Junctions Source: Science Year: 2013 Volume: 339 Pages: 1412-1415 ABSTRACT: Engineering wireframe architectures and scaffolds of increasing complexity is one of the important challenges in nanotechnology. We present a design strategy to create gridiron-like DNA structures. A series of four-arm junctions

  19. Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin

    Office of Scientific and Technical Information (OSTI)

    Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin Temperatures Borzenets, I. V.; Coskun, U. C.; Mebrahtu, H. T.; Bomze, Yu. V.; Smirnov, A. I.; Finkelstein, G....

  20. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis...

    Office of Scientific and Technical Information (OSTI)

    3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNTgraphene junctions. We have started to understand their structural, compositional, more and electronic properties. ...

  1. Grand Junction, Colorado: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    district.12 Registered Energy Companies in Grand Junction, Colorado Ruby Canyon Engineering Inc References US Census Bureau Incorporated place and minor civil...

  2. Van der Waals metal-semiconductor junction: Weak Fermi level...

    Office of Scientific and Technical Information (OSTI)

    Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier Citation Details In-Document Search Title: Van der Waals ...

  3. Apache Junction, Arizona: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Junction, Arizona: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.4150485, -111.5495777 Show Map Loading map... "minzoom":false,"mappingser...

  4. City of Grand Junction, Iowa (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    Iowa (Utility Company) Jump to: navigation, search Name: Grand Junction Municipal Utilities Place: Iowa Phone Number: (515) 738-2285 or (515) 738-2726 Facebook: https:...

  5. Phonon interference effects in molecular junctions

    SciTech Connect (OSTI)

    Markussen, Troels

    2013-12-28

    We study coherent phonon transport through organic, ?-conjugated molecules. Using first principles calculations and Green's function methods, we find that the phonon transmission function in cross-conjugated molecules, like meta-connected benzene, exhibits destructive quantum interference features very analogous to those observed theoretically and experimentally for electron transport in similar molecules. The destructive interference features observed in four different cross-conjugated molecules significantly reduce the thermal conductance with respect to linear conjugated analogues. Such control of the thermal conductance by chemical modifications could be important for thermoelectric applications of molecular junctions.

  6. Proximity induced vortices and long-range triplet supercurrents in ferromagnetic Josephson junctions and spin valves

    SciTech Connect (OSTI)

    Alidoust, Mohammad; Halterman, Klaus

    2015-03-28

    Using a spin-parameterized quasiclassical Keldysh-Usadel technique, we theoretically study supercurrent transport in several types of diffusive ferromagnetic (F)/superconducting (S) configurations with differing magnetization textures. We separate out the even- and odd-frequency components of the supercurrent within the low proximity limit and identify the relative contributions from the singlet and triplet channels. We first consider inhomogeneous one-dimensional Josephson structures consisting of a uniform bilayer magnetic S/F/F/S structure and a trilayer S/F/F/F/S configuration, in which case the outer F layers can have either a uniform or conical texture relative to the central uniform F layer. Our results demonstrate that for supercurrents flowing perpendicular to the F/F interfaces, incorporating a conical texture yields the most effective way to observe the signatures of long-ranged spin-triplet supercurrents. We also consider three different types of finite-sized two-dimensional magnetic structures subjected to an applied magnetic field normal to the junction plane: a S/F/S junction with uniform magnetization texture and two S/F/F/S configurations with differing F/F bilayer arrangements. In one case, the F/F interface is parallel with the S/F junction interfaces while in the other case, the F/F junction is oriented perpendicular to the S/F interfaces. We then discuss the proximity vortices and corresponding spatial maps of currents inside the junctions. For the uniform S/F/S junction, we analytically calculate the magnetic field induced supercurrent and pair potential in both the narrow and wide junction regimes, thus providing insight into the variations in the Fraunhofer diffraction patterns and proximity vortices when transitioning from a wide junction to a narrow one. Our extensive computations demonstrate that the induced long-range spin-triplet supercurrents can deeply penetrate uniform F/F bilayers when spin-singlet supercurrents flow parallel to the

  7. Development of high, stable-efficiency triple-junction a-Si alloy solar cells. Final technical report

    SciTech Connect (OSTI)

    Deng, X.; Jones, S.J.; Liu, T.; Izu, M.

    1998-04-01

    This report summarizes Energy Conversion Devices, Inc.`s (ECD) research under this program. ECD researchers explored the deposition of a-Si at high rates using very-high-frequency plasma MHz, and compared these VHF i-layers with radio-frequency (RF) plasma-deposited i-layers. ECD conducted comprehensive research to develop a {mu}c-Si p{sup +} layer using VHF deposition process with the objectives of establishing a wider process window for the deposition of high-quality p{sup +} materials and further enhancing their performance of a-Si solar cells by improving its p-layers. ECD optimized the deposition of the intrinsic a-Si layer and the boron-doped {mu}c-Si p{sup +} layer to improve the V{sub oc}. Researchers deposited wide-bandgap a-Si films using high hydrogen dilution; investigated the deposition of the ZnO layer (for use in back-reflector) using a sputter deposition process involving metal Zn targets; and obtained a baseline fabrication for single-junction a-Si n-i-p devices with 10.6% initial efficiency and a baseline fabrication for triple-junction a-Si devices with 11.2% initial efficiency. ECD researchers also optimized the deposition parameters for a-SiGe with high Ge content; designed a novel structure for the p-n tunnel junction (recombination layer) in a multiple-junction solar cell; and demonstrated, in n-i-p solar cells, the improved stability of a-Si:H:F materials when deposited using a new fluorine precursor. Researchers investigated the use of c-Si(n{sup +})/a-Si alloy/Pd Schottky barrier device as a tool for the effective evaluation of photovoltaic performance on a-Si alloy materials. Through alterations in the deposition conditions and system hardware, researchers improved their understanding for the deposition of uniform and high-quality a-Si and a-SiGe films over large areas. ECD researchers also performed extensive research to optimize the deposition process of the newly constructed 5-MW back-reflector deposition machine.

  8. Subgap biasing of superconducting tunnel junctions without a magnetic field

    SciTech Connect (OSTI)

    Segall, K.; Moyer, J.; Mazo, Juan J.

    2008-08-15

    Superconducting tunnel junctions (STJs) have been successfully used as single-photon detectors but require the use of a magnetic field to operate. A recent paper has proposed the idea to use a circuit of three junctions in place of a single junction in order to achieve the necessary biasing without applying a magnetic field. The nonlinear interaction between the different junctions in the circuit causes the existence of a stable subgap state for one of the junctions, which acts as the detector junction. In this paper, we present the first measurements demonstrating the existence of such a biasing state feasible for STJ detectors. Single junction measurements with an applied magnetic field help determine the functional form of the subgap current versus voltage; then the operating point of a three-junction circuit is measured and fit to theory. The excellent match between theory and experiment demonstrates the existence of the subgap biasing state. The outlook for possible use in detector applications is discussed.

  9. Josephson junctions in high-T/sub c/ superconductors

    DOE Patents [OSTI]

    Falco, C.M.; Lee, T.W.

    1981-01-14

    The invention includes a high T/sub c/ Josephson sperconducting junction as well as the method and apparatus which provides the junction by application of a closely controlled and monitored electrical discharge to a microbridge region connecting two portions of a superconducting film.

  10. Tandem junction amorphous semiconductor photovoltaic cell

    DOE Patents [OSTI]

    Dalal, V.L.

    1983-06-07

    A photovoltaic stack comprising at least two p[sup +]i n[sup +] cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p[sup +]i n[sup +] cells. 3 figs.

  11. Tandem junction amorphous semiconductor photovoltaic cell

    DOE Patents [OSTI]

    Dalal, Vikram L.

    1983-01-01

    A photovoltaic stack comprising at least two p.sup.+ i n.sup.+ cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p.sup.+ i n.sup.+ cells.

  12. Phaneorozoic sequence stratigraphy of Bolivia and adjacent regions

    SciTech Connect (OSTI)

    Sempere, T. )

    1993-02-01

    Phaneorozoic sequence stratigraphy of the Pacific margin of western South America, particularly the Bolivian section, has been completed and new interpretations and hypotheses have been proposed as a result of data analyses of this information. The Paleozoic margin was initially passive (late Cambrian-Llanvirn, [open quotes]Puna aulacogen[close quotes]), but became active during a middle Ordovician compressional episode. Most of late Cambrian to early Triassic Bolivian rocks are of marine origin, with dark shale units recording sea level rises, whereas middle Triassic to Recent rocks were mainly deposited in continental environments (except six restricted-marine ingressions in the late Cretaceous-Danian, and one in the late Miocene, all with hydrocarbon potential). A noteworthy similarity exists between the Devonian to Jurassic stratigraphies of Bolivia and the Parana basin, suggesting that Bolivia behaved as part of the Brazilian craton from late Cambrian to late Jurassic, when it was captured into the Pacific margin geotectonic system. Organic-rich units correlate with Paleozoic highstand deposits and younger ingressions. The Bolivian Phanerozoic strata is characterized by thick layers, partly due to middle Ordovician-Carboniferous and late Cretaceous-Cenozoic foreland basins. Paleozoic foreland geometries include northeastern onlaps and, potentially, stratigraphic traps. Hydrocarbon generation, migration and trapping mainly depended on Cenozoic structural loading and burial and on propagation of Andean deformation which are comprised of Paleozoic shale decollements. Precise knowledge of the evolution of the Phanerozoic geodynamic contexts and basin geometries through sedimentation and subsequent deformations is crucial for hydrocarbon exploration strategies in these regions.

  13. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOE Patents [OSTI]

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  14. Data Compendium for the Logging Test Pits at the ERDA Grand Junction...

    Office of Environmental Management (EM)

    Data Compendium for the Logging Test Pits at the ERDA Grand Junction Compound (December 1975) Data Compendium for the Logging Test Pits at the ERDA Grand Junction Compound ...

  15. Phase diagram of Josephson junction between s and s ± superconductors...

    Office of Scientific and Technical Information (OSTI)

    Publisher's Accepted Manuscript: Phase diagram of Josephson junction between s and s superconductors in the dirty limit Title: Phase diagram of Josephson junction between s and ...

  16. High performance anti-reflection coatings for broadband multi-junction solar cells

    SciTech Connect (OSTI)

    AIKEN,DANIEL J.

    2000-02-23

    The success of bandgap engineering has made high efficiency broadband multi-junction solar cells possible with photo-response out to the band edge of Ge. Modeling has been conducted which suggests that current double layer anti-reflection coating technology is not adequate for these devices in certain cases. Approaches for the development of higher performance anti-reflection coatings are examined. A new AR coating structure based on the use of Herpin equivalent layers is presented. Optical modeling suggests a decrease in the solar weighted reflectance of over 2.5{percent} absolute as a result. This structure requires no additional optical material development and characterization because no new optical materials are necessary. Experimental results and a sensitivity analysis are presented.

  17. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

    SciTech Connect (OSTI)

    Gottwald, M.; Kan, J. J.; Lee, K.; Zhu, X.; Park, C.; Kang, S. H.

    2015-01-19

    Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ with tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.

  18. Hetero-junction photovoltaic device and method of fabricating the device

    DOE Patents [OSTI]

    Aytug, Tolga; Christen, David K; Paranthaman, Mariappan Parans; Polat, Ozgur

    2014-02-10

    A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

  19. Techniques for Growth of Lattice-Matched Semiconductor Layers - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation Portal Solar Photovoltaic Solar Photovoltaic Industrial Technologies Industrial Technologies Building Energy Efficiency Building Energy Efficiency Advanced Materials Advanced Materials Find More Like This Return to Search Techniques for Growth of Lattice-Matched Semiconductor Layers For the fabrication of multi-junction solar cells, light emitting diodes, and high speed transistors National Renewable Energy Laboratory Contact NREL About This Technology Publications: PDF Document

  20. Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

    DOE Patents [OSTI]

    Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

    1999-01-01

    The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

  1. Mechanical deformations of boron nitride nanotubes in crossed junctions

    SciTech Connect (OSTI)

    Zhao, Yadong; Chen, Xiaoming; Ke, Changhong; Park, Cheol; Fay, Catharine C.; Stupkiewicz, Stanislaw

    2014-04-28

    We present a study of the mechanical deformations of boron nitride nanotubes (BNNTs) in crossed junctions. The structure and deformation of the crossed tubes in the junction are characterized by using atomic force microscopy. Our results show that the total tube heights are reduced by 20%33% at the crossed junctions formed by double-walled BNNTs with outer diameters in the range of 2.214.67?nm. The measured tube height reduction is found to be in a nearly linear relationship with the summation of the outer diameters of the two tubes forming the junction. The contact force between the two tubes in the junction is estimated based on contact mechanics theories and found to be within the range of 4.27.6 nN. The Young's modulus of BNNTs and their binding strengths with the substrate are quantified, based on the deformation profile of the upper tube in the junction, and are found to be 1.07??0.11 TPa and 0.180.29 nJ/m, respectively. Finally, we perform finite element simulations on the mechanical deformations of the crossed BNNT junctions. The numerical simulation results are consistent with both the experimental measurements and the analytical analysis. The results reported in this paper contribute to a better understanding of the structural and mechanical properties of BNNTs and to the pursuit of their applications.

  2. Ternary metal-rich sulfide with a layered structure

    DOE Patents [OSTI]

    Franzen, Hugo F.; Yao, Xiaoqiang

    1993-08-17

    A ternary Nb-Ta-S compound is provided having the atomic formula, Nb.sub.1.72 Ta.sub.3.28 S.sub.2, and exhibiting a layered structure in the sequence S-M3-M2-M1-M2-M3-S wherein S represents sulfur layers and M1, M2, and M3 represent Nb/Ta mixed metal layers. This sequence generates seven sheets stacked along the [001] direction of an approximate body centered cubic crystal structure with relatively weak sulfur-to-sulfur van der Waals type interactions between adjacent sulfur sheets and metal-to-metal bonding within and between adjacent mixed metal sheets.

  3. Effect of current injection into thin-film Josephson junctions

    SciTech Connect (OSTI)

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to Λ=2λ2/d;λ is the bulk London penetration depth of the film material and d is the film thickness.

  4. Effect of current injection into thin-film Josephson junctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to Λ=2λ2/d;λ is the bulk London penetration depth of the film material and d is the film thickness.

  5. Session Papers North Slope of Alaska and Adjacent Arctic Ocean Cloud

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Session Papers North Slope of Alaska and Adjacent Arctic Ocean Cloud and Radiation Testbed: Science and Siting Strategies B. D. Zak Sandia National Laboratories Albuquerque, New Mexico K. Stamnes University of Alaska Fairbanks, Alaska Introduction This paper serves as a summary of the current thinking regarding the development of the Atmospheric Radiation Measurement (ARM) Program's North Slope of Alaska and adjacent Arctic Ocean (NSA/AAO) Cloud and Radiation Testbed (CART) site. Ellingson et

  6. Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

    DOE Patents [OSTI]

    Wood, Richard F.; Young, Rosa T.

    1984-01-01

    The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.

  7. Coso Junction, California: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    OpenEI by expanding it. Coso Junction is a city in Inyo County, California. It is in Rose Valley, south of Dunmovin and west of Sugarloaf Mountain.1 Energy Generation...

  8. EA-1037: Uranium Lease Management Program, Grand Junction, Colorado

    Office of Energy Efficiency and Renewable Energy (EERE)

    This EA evaluates the environmental impacts of the U.S. Department of Energy's Grand Junction Projects Office's proposal to maintain and preserve the nation's immediately accessible supply of...

  9. White River Junction, Vermont: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. White River Junction is a census-designated place in Windsor County, Vermont. It falls under...

  10. Manipulating Josephson junctions in thin-films by nearby vortices

    SciTech Connect (OSTI)

    Kogan, V G; Mints, R G

    2014-07-01

    It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I-c(H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I-c(H) has zero at H = 0 instead of the traditional maximum of '0-type' junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction-vortex separation exceeds similar to W, the strip width, I-c(H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges. (C) 2014 Elsevier B.V. All rights reserved.

  11. Single-charge detection by an atomic precision tunnel junction

    SciTech Connect (OSTI)

    House, M. G. Peretz, E.; Keizer, J. G.; Hile, S. J.; Simmons, M. Y.

    2014-03-17

    We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5?nm wide and 17.2?nm long defined by an atomically precise phosphorus doping profile in silicon. The conductance of the junction responds to a nearby gate potential and also to changes in the charge state of a quantum dot patterned 52?nm away. The response of this detector is monotonic across the entire working voltage range of the device, which will make it particularly useful for studying systems of multiple quantum dots. The charge sensitivity is maximized when the junction is most conductive, suggesting that more sensitive detection can be achieved by shortening the length of the junction to increase its conductance.

  12. Phase diagram of Josephson junction between

    Office of Scientific and Technical Information (OSTI)

    diagram of Josephson junction betweensandssuperconductors in the dirty limit...

  13. RESULTS OF RADIOLOGICAL MEASUREMENTS TAKEN NEAR JUNCTION OF HIGHWAY...

    Office of Legacy Management (LM)

    RESULTS OF RADIOLOGICAL MEASUREMENTS TAKEN NEAR JUNCTION OF HIGHWAY 3I AND MILITARY ROAD ... RESULTS OF RADIOLOGTCAL ITEASUREMENfi| TAKEN NEAR JUNCTToN 9F HIGESAY 31 AT.ID MILITARY ...

  14. Tunnel junction enhanced nanowire ultraviolet light emitting diodes

    SciTech Connect (OSTI)

    Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.; Grassman, Tyler J.; McComb, David W.; Myers, Roberto C.

    2015-09-07

    Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junction within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.

  15. Modeling the Physical and Biochemical Influence of Ocean Thermal Energy Conversion Plant Discharges into their Adjacent Waters

    Broader source: Energy.gov [DOE]

    Modeling the Physical and Biochemical Influence of Ocean Thermal Energy Conversion Plant Discharges into their Adjacent Waters

  16. Heterojunction for Multi-Junction Solar Cells - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Photovoltaic Solar Photovoltaic Advanced Materials Advanced Materials Find More Like This Return to Search Heterojunction for Multi-Junction Solar Cells Sandia National Laboratories Contact SNL About This Technology Publications: PDF Document Publication Market Sheet (1,250 KB) Technology Marketing SummarySandia National Laboratories has created a semiconductor p-n heterojunction for use in forming a photodetector that has applications for use in a multi-junction solar cell and detecting light

  17. High Efficiency Multiple-Junction Solar Cells - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Find More Like This Return to Search High Efficiency Multiple-Junction Solar Cells Sandia National Laboratories Contact SNL About This Technology Publications: PDF Document Publication Market Sheet (937 KB) Technology Marketing SummarySingle junction solar cells have limited efficiency and fail to extract maximum energy from photons outside of a specific spectral region. Higher efficiency and optical to electrical energy conversion is achieved by stacking

  18. EA-1338: Transfer of the Department of Energy Grand Junction Office to Non-DOE Ownership, Grand Junction, Colorado

    Office of Energy Efficiency and Renewable Energy (EERE)

    This EA evaluates the environmental impacts for the proposed transfer of real and personal property at the U.S. Department of Energy's Grand Junction Office to non-DOE ownership.

  19. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOE Patents [OSTI]

    Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

  20. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOE Patents [OSTI]

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-07-04

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

    1. Final report of the decontamination and decommissioning of Building 1 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Widdop, M.R.

      1996-08-01

      The U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJPO Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, also is the remedial action contractor. Building 1 was found to be radiologically contaminated and was demolished in 1996. The soil beneath and adjacent to the building was remediated in accordance with identified standards and can be released for unlimited exposure and unrestricted use. This document was prepared in response to a DOE request for an individual final report for each contaminated GJPO building.

    2. Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

      SciTech Connect (OSTI)

      Rajamohanan, Bijesh Mohata, Dheeraj; Hollander, Matthew; Datta, Suman; Zhu, Yan; Hudait, Mantu; Jiang, Zhengping; Klimeck, Gerhard

      2014-01-28

      In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-κ gate dielectric. HetJ pTFET exhibited drive current of 35 μA/μm in comparison to homJ pTFET, which exhibited drive current of 0.3 μA/μm at V{sub DS} = −0.5 V under DC biasing conditions. Additionally, with pulsing of 1 μs gate voltage, hetJ pTFET exhibited enhanced drive current of 85 μA/μm at V{sub DS} = −0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies.

    3. Method for forming p-n junctions and solar-cells by laser-beam processing

      DOE Patents [OSTI]

      Narayan, Jagdish; Young, Rosa T.

      1979-01-01

      This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.

    4. Measure Guideline: Optimizing the Configuration of Flexible Duct Junction Boxes

      SciTech Connect (OSTI)

      Beach, R.; Burdick, A.

      2014-03-01

      This measure guideline offers additional recommendations to heating, ventilation, and air conditioning (HVAC) system designers for optimizing flexible duct, constant-volume HVAC systems using junction boxes within Air Conditioning Contractors of America (ACCA) Manual D guidance (Rutkowski, H. Manual D -- Residential Duct Systems, 3rd edition, Version 1.00. Arlington, VA: Air Conditioning Contractors of America, 2009.). IBACOS used computational fluid dynamics software to explore and develop guidance to better control the airflow effects of factors that may impact pressure losses within junction boxes among various design configurations (Beach, R., Prahl, D., and Lange, R. CFD Analysis of Flexible Duct Junction Box Design. Golden, CO: National Renewable Energy Laboratory, submitted for publication 2013). These recommendations can help to ensure that a system aligns more closely with the design and the occupants' comfort expectations. Specifically, the recommendations described herein show how to configure a rectangular box with four outlets, a triangular box with three outlets, metal wyes with two outlets, and multiple configurations for more than four outlets. Designers of HVAC systems, contractors who are fabricating junction boxes on site, and anyone using the ACCA Manual D process for sizing duct runs will find this measure guideline invaluable for more accurately minimizing pressure losses when using junction boxes with flexible ducts.

    5. Assessment of cover systems at the Grand Junction, Colorado, uranium mill tailings pile: 1987 field measurements

      SciTech Connect (OSTI)

      Gee, G.W.; Campbell, M.D.; Freeman, H.D.; Cline, J.F.

      1989-02-01

      Four Pacific Northwest Laboratory (PNL) scientists and a technician conducted an onsite evaluation of radon gas exhalation, water content profiles, and plant and animal intrusion for a series of cover systems located on the uranium mill tailings pile at Grand Junction, Colorado. These six plots were sampled extensively down to the radon control layer (e.g., asphalt or wet clay) for soil moisture content and permeability. Radon gas emission through the surface was measured. Soil samples were collected and analyzed in the lab for particle-size distribution, particle density, bulk density, and ambient water content. Prairie dog burrows were excavated to discover the extent to which they penetrated the barriers. Plant type, density, and cover characteristics were measured.

    6. Influence of quasiparticle multi-tunneling on the energy flow through the superconducting tunnel junction

      SciTech Connect (OSTI)

      Samedov, V. V.; Tulinov, B. M.

      2011-07-01

      Superconducting tunnel junction (STJ) detector consists of two layers of superconducting material separated by thin insulating barrier. An incident particle produces in superconductor excess nonequilibrium quasiparticles. Each quasiparticle in superconductor should be considered as quantum superposition of electron-like and hole-like excitations. This duality nature of quasiparticle leads to the effect of multi-tunneling. Quasiparticle starts to tunnel back and forth through the insulating barrier. After tunneling from biased electrode quasiparticle loses its energy via phonon emission. Eventually, the energy that equals to the difference in quasiparticle energy between two electrodes is deposited in the signal electrode. Because of the process of multi-tunneling, one quasiparticle can deposit energy more than once. In this work, the theory of branching cascade processes was applied to the process of energy deposition caused by the quasiparticle multi-tunneling. The formulae for the mean value and variance of the energy transferred by one quasiparticle into heat were derived. (authors)

    7. Fully transparent organic transistors with junction-free metallic network electrodes

      SciTech Connect (OSTI)

      Pei, Ke; Wang, Zongrong; Ren, Xiaochen; Zhang, Zhichao; Peng, Boyu; Chan, Paddy K. L.

      2015-07-20

      We utilize highly transparent, junction-free metal network electrodes to fabricate fully transparent organic field effect transistors (OFETs). The patterned transparent Ag networks are developed by polymer crack template with adjustable line width and density. Sheet resistance of the network is 6.8 Ω/sq and optical transparency in the whole visible range is higher than 80%. The bottom contact OFETs with DNTT active layer and parylene-C dielectric insulator show a maximum field-effect mobility of 0.13 cm{sup 2}/V s (average mobility is 0.12 cm{sup 2}/V s) and on/off ratio is higher than 10{sup 7}. The current OFETs show great potential for applications in the next generation of transparent and flexible electronics.

    8. InGaAsN/GaAs heterojunction for multi-junction solar cells

      DOE Patents [OSTI]

      Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

      2001-01-01

      An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

    9. Junction-based field emission structure for field emission display

      DOE Patents [OSTI]

      Dinh, Long N.; Balooch, Mehdi; McLean, II, William; Schildbach, Marcus A.

      2002-01-01

      A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.

    10. Superpoissonian shot noise in organic magnetic tunnel junctions

      SciTech Connect (OSTI)

      Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G.; Hong, Jhen-Yong; Lin, Minn-Tsong; Szczepański, Tomasz; Dugaev, Vitalii K.; Barnaś, Józef

      2014-12-08

      Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

    11. Environmental Audit of the Grand Junction Projects Office

      SciTech Connect (OSTI)

      Not Available

      1991-08-01

      The Grand Junction Projects Office (GJPO) is located in Mesa County, Colorado, immediately south and west of the Grand Junction city limits. The US Atomic Energy Commission (AEC) established the Colorado Raw Materials Office at the present-day Grand Junction Projects Office in 1947, to aid in the development of a viable domestic uranium industry. Activities at the site included sampling uranium concentrate; pilot-plant milling research, including testing and processing of uranium ores; and operation of a uranium mill pilot plant from 1954 to 1958. The last shipment of uranium concentrate was sent from GJPO in January, 1975. Since that time the site has been utilized to support various DOE programs, such as the former National Uranium Resource Evaluation (NURE) Program, the Uranium Mill Tailings Remedial Action Project (UMTRAP), the Surplus Facilities Management Program (SFMP), and the Technical Measurements Center (TMC). All known contamination at GJPO is believed to be the result of the past uranium milling, analyses, and storage activities. Hazards associated with the wastes impounded at GJPO include surface and ground-water contamination and potential radon and gamma-radiation exposure. This report documents the results of the Baseline Environmental Audit conducted at Grand Junction Projects Office (GJPO) located in Grand Junction, Colorado. The Grand Junction Baseline Environmental Audit was conducted from May 28 to June 12, 1991, by the Office of Environmental Audit (EH-24). This Audit evaluated environmental programs and activities at GJPO, as well as GJPO activities at the State-Owned Temporary Repository. 4 figs., 12 tabs.

    12. Computer-assisted data acquisition on Josephson junctions

      SciTech Connect (OSTI)

      Pagano, S. ); Costabile, G.; Fedullo, V.

      1989-09-01

      An automatic digital data-acquisition system for the test and characterization of superconducting Josephson tunnel junctions is presented. The key feature is represented by the high degree of interaction of the measurement system with the device under test. This is accomplished by an iterated sequence of data acquisitions, automatic analysis, and subsequent modifications of the control signals in the device. In this way, the basic calibration and the value of the relevant quantities involved with the Josephson junction are automatically determined. A connection with a host computer makes possible more complex data analysis, while the full control of the experiment by a dedicated computer allows the operator to perform nonroutine procedures.

    13. Josephson tunnel junctions with chemically vapor deposited polycrystalline germanium barriers

      SciTech Connect (OSTI)

      Kroger, H.; Jillie, D.W.; Smith, L.N.; Phaneuf, L.E.; Potter, C.N.; Shaw, D.M.; Cukauskas, E.J.; Nisenoff, M.

      1984-03-01

      High quality Josephson tunnel junctions have been fabricated whose tunneling barrier is polycrystalline germanium chemically vapor deposited on a NbN base electrode and covered by a Nb counterelectrode. These junctions have excellent characteristics for device applications: values of V/sub m/ (the product of the critical current and the subgap resistance measured at 2 mV and 4.2 K) ranging between 35--48 mV, ideal threshold curves, a steep current rise at the gap voltage, and Josephson current densities from 100 to 1100 A/cm/sup 2/.

    14. Process for selectively treating a subterranean formation using coiled tubing without affecting or being affected by the two adjacent zones

      SciTech Connect (OSTI)

      Vercaemer, C.; Lemanczyk, R.; Piot, B.

      1989-06-27

      A process is described for selectively treating a subterranean formation without affecting adjacent zones above and below the formation characterized by: injecting a treatment fluid into a wellbore annulus adjacent the formation to be treated and simultaneously injecting two protection fluids, immiscible with the treatment fluid, into the annulus adjacent the zones wherein the treatment fluid and protection fluids are separated with the wellbore annulus solely by a fluid interface between the treatment fluid and each of the immiscible protection fluids.

    15. Interaction of Josephson Junction and Distant Vortex in Narrow Thin-Film Superconducting Strips

      SciTech Connect (OSTI)

      Kogan, V. G.; Mints, R. G.

      2014-01-31

      The phase difference between the banks of an edge-type planar Josephson junction crossing the narrow thin-film strip depends on wether or not vortices are present in the junction banks. For a vortex close to the junction this effect has been seen by Golod, Rydh, and Krasnov [Phys. Rev. Lett. 104, 227003 (2010)], who showed that the vortex may turn the junction into ? type. It is shown here that even if the vortex is far away from the junction, it still changes the 0 junction to a ? junction when situated close to the strip edges. Within the approximation used, the effect is independent of the vortex-junction separation, a manifestation of the topology of the vortex phase which extends to macroscopic distances of superconducting coherence.

    16. Photonic layered media

      DOE Patents [OSTI]

      Fleming, James G.; Lin, Shawn-Yu

      2002-01-01

      A new class of structured dielectric media which exhibit significant photonic bandstructure has been invented. The new structures, called photonic layered media, are easy to fabricate using existing layer-by-layer growth techniques, and offer the ability to significantly extend our practical ability to tailor the properties of such optical materials.

    17. Optimized Triple-Junction Solar Cells Using Inverted Metamorphic Approach (Presentation)

      SciTech Connect (OSTI)

      Geisz, J. F.

      2008-11-01

      Record efficiencies with triple-junction inverted metamorphic designs, modeling useful to optimize, and consider operating conditions before choosing design.

    18. EERE Success Story—Solar Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell

      Broader source: Energy.gov [DOE]

      EERE supported the development of Solar Junction's concentrated photovoltaic technology that set a world record for conversion efficiency.

    19. DOE/Grand Junction Office Bluewater LTSP July 1997 Doc. No. S00012AA...

      Office of Legacy Management (LM)

      DOEGrand Junction Office Bluewater LTSP July 1997 Doc. No. S00012AA, Page iii Contents Page 1.0 Introduction ......

    20. Scintillator reflective layer coextrusion

      DOE Patents [OSTI]

      Yun, Jae-Chul; Para, Adam

      2001-01-01

      A polymeric scintillator has a reflective layer adhered to the exterior surface thereof. The reflective layer comprises a reflective pigment and an adhesive binder. The adhesive binder includes polymeric material from which the scintillator is formed. A method of forming the polymeric scintillator having a reflective layer adhered to the exterior surface thereof is also provided. The method includes the steps of (a) extruding an inner core member from a first amount of polymeric scintillator material, and (b) coextruding an outer reflective layer on the exterior surface of the inner core member. The outer reflective layer comprises a reflective pigment and a second amount of the polymeric scintillator material.

    1. Performance model assessment for multi-junction concentrating photovoltaic systems.

      SciTech Connect (OSTI)

      Riley, Daniel M.; McConnell, Robert.; Sahm, Aaron; Crawford, Clark; King, David L.; Cameron, Christopher P.; Foresi, James S.

      2010-03-01

      Four approaches to modeling multi-junction concentrating photovoltaic system performance are assessed by comparing modeled performance to measured performance. Measured weather, irradiance, and system performance data were collected on two systems over a one month period. Residual analysis is used to assess the models and to identify opportunities for model improvement.

    2. Measure Guideline: Optimizing the Configuration of Flexible Duct Junction Boxes

      SciTech Connect (OSTI)

      Beach, R.; Burdick, A.

      2014-03-01

      This measure guideline offers additional recommendations to heating, ventilation, and air conditioning (HVAC) system designers for optimizing flexible duct, constant-volume HVAC systems using junction boxes within Air Conditioning Contractors of America (ACCA) Manual D guidance. IBACOS used computational fluid dynamics software to explore and develop guidance to better control the airflow effects of factors that may impact pressure losses within junction boxes among various design configurations. These recommendations can help to ensure that a system aligns more closely with the design and the occupants' comfort expectations. Specifically, the recommendations described herein show how to configure a rectangular box with four outlets, a triangular box with three outlets, metal wyes with two outlets, and multiple configurations for more than four outlets. Designers of HVAC systems, contractors who are fabricating junction boxes on site, and anyone using the ACCA Manual D process for sizing duct runs will find this measure guideline invaluable for more accurately minimizing pressure losses when using junction boxes with flexible ducts.

    3. ALTERNATIVE MATERIALS FOR RAMP-EDGE SNS JUNCTIONS

      SciTech Connect (OSTI)

      Jia, Q.; Fan, Y.

      1999-06-01

      We report on the processing optimization and fabrication of ramp-edge high-temperature superconducting junctions by using alternative materials for both superconductor electrodes and normal-metal barrier. By using Ag-doped YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (Ag:YBCO) as electrodes and a cation-modified compound of (Pr{sub y}Gd{sub 0.6{minus}y})Ca{sub 0.4}Ba{sub 1.6}La{sub 0.4}Cu{sub 3}O{sub 7} (y = 0.4, 0.5, and 0.6) as a normal-metal barrier, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. By using Ag:YBCO as electrodes, we have found that the processing controllability /reproducibility and the stability of the SNS junctions are improved substantially. The junctions fabricated with these alternative materials show well-defined RSJ-like current vs voltage characteristics at liquid nitrogen temperature.

    4. August 2015 Groundwater Sampling at the Grand Junction, Colorado, Disposal Site

      Office of Legacy Management (LM)

      Sampling at the Grand Junction, Colorado, Disposal Site October 2015 LMS/GRJ/S00815 This page intentionally left blank U.S. Department of Energy DVP-August 2015, Grand Junction, Colorado October 2015 RIN 15077245 Page i Contents Sampling Event Summary ...............................................................................................................1 Grand Junction, Colorado, Disposal Site, Sample Location Map ...................................................3 Data Assessment

    5. January 2016 Groundwater and Surface Water Sampling at the Grand Junction, Colorado, Processing Site

      Office of Legacy Management (LM)

      6 Groundwater and Surface Water Sampling at the Grand Junction, Colorado, Processing Site March 2016 LMS/GJT/S00116 This page intentionally left blank U.S. Department of Energy DVP-January 2016, Grand Junction, Colorado March 2016 RIN 15127576 Page i Contents Sampling Event Summary ...............................................................................................................1 Grand Junction, Colorado, Processing Site, Sample Location Map

    6. The chaotic oscillations of a Josephson junction with external magnetic field

      SciTech Connect (OSTI)

      Ma, J.G.; Wolff, I.

      1996-05-01

      Using the Melnikov Method the oscillation of a single Josephson junction with external magnetic field and DC bias is analyzed. Under the external magnetic field the junction can operate in chaos even if there is no bias. The numerical results show that in dependence on some parameters the Josephson junction with external magnetic field will go from stable periodic states to chaotic states.

    7. Titanium nitride as a seed layer for Heusler compounds

      SciTech Connect (OSTI)

      Niesen, Alessia Glas, Manuel; Ludwig, Jana; Schmalhorst, Jan-Michael; Reiss, Günter; Sahoo, Roshnee; Ebke, Daniel; Arenholz, Elke

      2015-12-28

      Titanium nitride (TiN) shows low resistivity at room temperature (27 μΩ cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn{sub 2.45}Ga as well as in- and out-of-plane magnetized Co{sub 2}FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn{sub 2.45}Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co{sub 2}FeAl. TiN buffered Mn{sub 2.45}Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co{sub 2}FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer.

    8. Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells

      SciTech Connect (OSTI)

      Khatri, I.; Tang, Z.; Hiate, T.; Liu, Q.; Ishikawa, R.; Ueno, K.; Shirai, H.

      2013-12-21

      We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm{sup 2}/V s for the 1215?wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15?wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 23?nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.

    9. Antireflection Coating Design for Series Interconnected Multi-Junction Solar Cells

      SciTech Connect (OSTI)

      AIKEN,DANIEL J.

      1999-11-29

      AR coating design for multi-junction solar cells can be more challenging than in the single junction case. Reasons for this are discussed. Analytical expressions used to optimize AR coatings for single junction solar cells are extended for use in monolithic, series interconnected multi-junction solar cell AR coating design. The result is an analytical expression which relates the solar cell performance (through J{sub SC}) directly to the AR coating design through the device reflectance. It is also illustrated how AR coating design can be used to provide an additional degree of freedom for current matching multi-junction devices.

    10. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

      SciTech Connect (OSTI)

      SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

      2000-05-16

      Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

    11. Layered plasma polymer composite membranes

      DOE Patents [OSTI]

      Babcock, W.C.

      1994-10-11

      Layered plasma polymer composite fluid separation membranes are disclosed, which comprise alternating selective and permeable layers for a total of at least 2n layers, where n is [>=]2 and is the number of selective layers. 2 figs.

    12. Layered plasma polymer composite membranes

      DOE Patents [OSTI]

      Babcock, Walter C.

      1994-01-01

      Layered plasma polymer composite fluid separation membranes are disclosed, which comprise alternating selective and permeable layers for a total of at least 2n layers, where n is .gtoreq.2 and is the number of selective layers.

    13. Millikelvin cooling by heavy-fermion-based tunnel junctions

      SciTech Connect (OSTI)

      Prest, Martin; Min, Gao; Whall, Terry

      2015-12-28

      This paper addresses a high-performance electron-tunneling cooler based on a novel heavy-fermion/insulator/superconductor junction for millikelvin cooling applications. We show that the cooling performance of an electronic tunneling refrigerator could be significantly improved using a heavy-fermion metal to replace the normal metal in a conventional normal metal/insulator/superconductor junction. The calculation, based on typical parameters, indicates that, for a bath temperature of 300 mK, the minimum cooling temperature of an electron tunneling refrigerator is reduced from around 170 mK to below 50 mK if a heavy-fermion metal is employed in place of the normal metal. The improved cooling is attributed to an enhancement in electron tunneling due to the existence of a resonant density of states at the Fermi level.

    14. Grain boundary and triple junction diffusion in nanocrystalline copper

      SciTech Connect (OSTI)

      Wegner, M. Leuthold, J.; Peterlechner, M.; Divinski, S. V.; Song, X.; Wilde, G.

      2014-09-07

      Grain boundary and triple junction diffusion in nanocrystalline Cu samples with grain sizes, ?d?, of ?35 and ?44?nm produced by spark plasma sintering were investigated by the radiotracer method using the {sup 63}Ni isotope. The measured diffusivities, D{sub eff}, are comparable with those determined previously for Ni grain boundary diffusion in well-annealed, high purity, coarse grained, polycrystalline copper, substantiating the absence of a grain size effect on the kinetic properties of grain boundaries in a nanocrystalline material at grain sizes d???35?nm. Simultaneously, the analysis predicts that if triple junction diffusion of Ni in Cu is enhanced with respect to the corresponding grain boundary diffusion rate, it is still less than 500?D{sub gb} within the temperature interval from 420?K to 470?K.

    15. Multiple density layered insulator

      DOE Patents [OSTI]

      Alger, Terry W.

      1994-01-01

      A multiple density layered insulator for use with a laser is disclosed wh provides at least two different insulation materials for a laser discharge tube, where the two insulation materials have different thermoconductivities. The multiple layer insulation materials provide for improved thermoconductivity capability for improved laser operation.

    16. Multiple density layered insulator

      DOE Patents [OSTI]

      Alger, T.W.

      1994-09-06

      A multiple density layered insulator for use with a laser is disclosed which provides at least two different insulation materials for a laser discharge tube, where the two insulation materials have different thermoconductivities. The multiple layer insulation materials provide for improved thermoconductivity capability for improved laser operation. 4 figs.

    17. Literature and data review for the surface-water pathway: Columbia River and adjacent coastal areas

      SciTech Connect (OSTI)

      Walters, W.H.; Dirkes, R.L.; Napier, B.A.

      1992-04-01

      As part of the Hanford Environmental Dose Reconstruction Project, Pacific Northwest Laboratory reviewed literature and data on radionuclide concentrations and distribution in the water, sediment, and biota of the Columbia River and adjacent coastal areas. Over 600 documents were reviewed including Hanford reports, reports by offsite agencies, journal articles, and graduate theses. Certain radionuclide concentration data were used in preliminary estimates of individual dose for the 1964--1966 time period. This report summarizes the literature and database review and the results of the preliminary dose estimates.

    18. Literature and data review for the surface-water pathway: Columbia River and adjacent coastal areas

      SciTech Connect (OSTI)

      Walters, W.H.; Dirkes, R.L.; Napier, B.A.

      1992-11-01

      As part of the Hanford Environmental Dose Reconstruction (HEDR) Project, Battelle, Pacific Northwest Laboratories reviewed literature and data on radionuclide concentrations and distribution in the water, sediment, and biota of the Columbia River and adjacent coastal areas. Over 600 documents were reviewed including Hanford reports, reports by offsite agencies, journal articles, and graduate theses. Radionuclide concentration data were used in preliminary estimates of individual dose for the period 1964 through 1966. This report summarizes the literature and database reviews and the results of the preliminary dose estimates.

    19. Revenue metering error caused by induced voltage from adjacent transmission lines

      SciTech Connect (OSTI)

      Hughes, M.B. )

      1992-04-01

      A large zero sequence voltage was found to have been induced onto a 138 kV line from adjacent 500 kV lines where these share the same transmission right-of-way. This zero sequence voltage distorted the 2-1/2-element revenue metering schemes used for two large industrial customer supplied directly from the affected 138 kV line. As a result, these two customers were overcharged, on average, approximately 3.5% for 15 years. This paper describes the work done to trace the origins of the zero sequence voltage, quantify the metering error, and calculate customer refunds which, in the end, totalled $4 million.

    20. Multiple layer insulation cover

      DOE Patents [OSTI]

      Farrell, James J.; Donohoe, Anthony J.

      1981-11-03

      A multiple layer insulation cover for preventing heat loss in, for example, a greenhouse, is disclosed. The cover is comprised of spaced layers of thin foil covered fabric separated from each other by air spaces. The spacing is accomplished by the inflation of spaced air bladders which are integrally formed in the cover and to which the layers of the cover are secured. The bladders are inflated after the cover has been deployed in its intended use to separate the layers of the foil material. The sizes of the material layers are selected to compensate for sagging across the width of the cover so that the desired spacing is uniformly maintained when the cover has been deployed. The bladders are deflated as the cover is stored thereby expediting the storage process and reducing the amount of storage space required.

    1. Fractional quantum Hall junctions and two-channel Kondo models

      SciTech Connect (OSTI)

      Sandler, Nancy P.; Fradkin, Eduardo

      2001-06-15

      A mapping between fractional quantum Hall (FQH) junctions and the two-channel Kondo model is presented. We discuss this relation in detail for the particular case of a junction of a FQH state at {nu}=1/3 and a normal metal. We show that in the strong coupling regime this junction has a non-Fermi-liquid fixed point. At this fixed point the electron Green{close_quote}s function has a branch cut and the impurity entropy is equal to S=1/2ln2. We construct the space of perturbations at the strong coupling fixed point and find that the dimension of the tunneling operator is 1/2. These properties are strongly reminiscent of the non-Fermi-liquid fixed points of a number of quantum impurity models, particularly the two-channel Kondo model. However we have found that, in spite of these similarities, the Hilbert spaces of these two systems are quite different. In particular, although in a special limit the Hamiltonians of both systems are the same, their Hilbert spaces are not since they are determined by physically distinct boundary conditions. As a consequence the spectrum of operators in the two problems is different.

    2. Environmental assessment of facility operations at the U.S. Department of Energy Grand Junction Projects Office, Grand Junction, Colorado

      SciTech Connect (OSTI)

      1996-06-01

      The US Department of Energy (DOE) has prepared a sitewide environmental assessment (EA) of the proposed action to continue and expand present-day activities on the DOE Grand Junction Projects Office (GJPO) facility in Grand Junction, Colorado. Because DOE-GJPO regularly proposes and conducts many different on-site activities, DOE decided to evaluate these activities in one sitewide EA rather than in multiple, activity-specific documents. On the basis of the information and analyses presented in the EA, DOE has determined that the proposed action does not constitute a major Federal action significantly affecting the quality of the human environment, as defined by the National Environmental Policy Act (NEPA) of 1969. Therefore, preparation of an environmental impact statement is not required for facility operations, and DOE is issuing this Finding of No Significant Impact (FONSI).

    3. Joint measurement of current-phase relations and transport properties of hybrid junctions using a three junctions superconducting quantum interference device

      SciTech Connect (OSTI)

      Basset, J.; Delagrange, R.; Weil, R.; Kasumov, A.; Bouchiat, H.; Deblock, R.

      2014-07-14

      We propose a scheme to measure both the current-phase relation and differential conductance dI/dV of a superconducting junction, in the normal and the superconducting states. This is done using a dc Superconducting Quantum Interference Device with two Josephson junctions in parallel with the device under investigation and three contacts. As a demonstration, we measure the current-phase relation and dI/dV of a small Josephson junction and a carbon nanotube junction. In this latter case, in a regime where the nanotube is well conducting, we show that the non-sinusoidal current phase relation we find is consistent with the theory for a weak link, using the transmission extracted from the differential conductance in the normal state. This method holds great promise for future investigations of the current-phase relation of more exotic junctions.

    4. Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells

      SciTech Connect (OSTI)

      Mintairov, S. A. Andreev, V. M.; Emelyanov, V. M.; Kalyuzhnyy, N. A.; Timoshina, N. K.; Shvarts, M. Z.; Lantratov, V. M.

      2010-08-15

      A technique for determining a minority carrier's diffusion length in photoactive III-V layers of solar cells by approximating their spectral characteristics is presented. Single-junction GaAs, Ge and multi-junction GaAs/Ge, GaInP/GaAs, and GaInP/GaInAs/Ge solar cells fabricated by hydride metal-organic vapor-phase epitaxy (H-MOVPE) have been studied. The dependences of the minority carrier diffusion length on the doping level of p-Ge and n-GaAs are determined. It is shown that the parameters of solid-state diffusion of phosphorus atoms to the p-Ge substrate from the n-GaInP nucleation layer are independent of the thickness of the latter within 35-300 nm. It is found that the diffusion length of subcells of multijunction structures in Ga(In)As layers is smaller in comparison with that of single-junction structures.

    5. Compliant layer chucking surface

      DOE Patents [OSTI]

      Blaedel, Kenneth L.; Spence, Paul A.; Thompson, Samuel L.

      2004-12-28

      A method and apparatus are described wherein a thin layer of complaint material is deposited on the surface of a chuck to mitigate the deformation that an entrapped particle might cause in the part, such as a mask or a wafer, that is clamped to the chuck. The harder particle will embed into the softer layer as the clamping pressure is applied. The material composing the thin layer could be a metal or a polymer for vacuum or electrostatic chucks. It may be deposited in various patterns to affect an interrupted surface, such as that of a "pin" chuck, thereby reducing the probability of entrapping a particle.

    6. Boundary Layer Structure:

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      Boundary Layer Structure: a comparison between methods and sites Thiago Biscaro Suzane de Sá Jae-In Song Shaoyue "Emily" Qiu Mentors: Virendra Ghate and Ewan O'Connor July 24 2015 1 st ever ARM Summer Training Outline * IntroducQon * Methodology * Results - SGP - MAO - Comparison between the 2 sites * Conclusions INTRODUCTION Focus: esQmates of PBL height Boundary Layer: "The boUom layer of the troposphere that is in contact with the surface of the earth." (AMS, Glossary of

    7. Shunt-capacitor-assisted synchronization of oscillations in intrinsic Josephson junctions stack.

      SciTech Connect (OSTI)

      Martin, I.; Halasz, G. B.; Bulaevskii, L. N.; Koshelev, A. E.; Materials Science Division; LANL

      2010-08-06

      We show that a shunt capacitor, by coupling each Josephson junction to all the other junctions, stabilizes synchronized oscillations in an intrinsic Josephson junction stack biased by a dc current. This synchronization mechanism is similar to the previously discussed radiative coupling between junctions, however, it is not defined by the geometry of the stack. It is particularly important in crystals with smaller numbers of junctions (where the radiation coupling is weak), and is comparable with the effect of strong super-radiation in crystals with many junctions. The shunt also helps to enter the phase-locked regime in the beginning of the oscillations, after switching on the bias current. Furthermore, it may be used to tune radiation power, which drops as the shunt capacitance increases.

    8. Voltage dependence of the differential capacitance of a p{sup +}-n junction

      SciTech Connect (OSTI)

      Shekhovtsov, N. A.

      2013-04-15

      The dependences of the differential capacitance and current of a p{sup +}-n junction with a uniformly doped n region on the voltage in the junction region are calculated. The p{sup +}-n junction capacitance controls the charge change in the junction region taking into account a change in the electric field of the quasi-neutral n region and a change in its bipolar drift mobility with increasing excess charge-carrier concentration. It is shown that the change in the sign of the p{sup +}-n junction capacitance with increasing injection level is caused by a decrease in the bipolar drift mobility as the electron-hole pair concentration in the n region increases. It is shown that the p{sup +}-n junction capacitance decreases with increasing reverse voltage and tends to a constant positive value.

    9. Structured luminescence conversion layer

      DOE Patents [OSTI]

      Berben, Dirk; Antoniadis, Homer; Jermann, Frank; Krummacher, Benjamin Claus; Von Malm, Norwin; Zachau, Martin

      2012-12-11

      An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern.

    10. Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes

      DOE Patents [OSTI]

      Tansu, Nelson; Zhao, Hongping; Zhang, Jing; Liu, Guangyu

      2014-04-01

      A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

    11. GaInNAs Junctions for Next-Generation Concentrators: Progress and Prospects

      SciTech Connect (OSTI)

      Friedman, D. J.; Ptak, A. J.; Kurtz, S. R.; Geisz, J. F.; Kiehl, J.

      2005-08-01

      We discuss progress in the development of GaInNAs junctions for application in next-generation multijunction concentrator cells. A significant development is the demonstration of near-100% internal quantum efficiencies in junctions grown by molecular-beam epitaxy. Testing at high currents validates the compatibility of these devices with concentrator operation. The efficiencies of several next-generation multijunction structures incorporating these state-of-the-art GaInNAs junctions are projected.

    12. Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers

      SciTech Connect (OSTI)

      Jillie, D.W.; Kroger, H.; Smith, L.N.; Cukauskas, E.J.; Nisenoff, M.

      1982-04-15

      Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers (NbN-..cap alpha..Si-Nb) have been prepared using processing that is fully compatible with integrated circuit fabrication. These junctions are of suitable quality and uniformity for digital circuit and S-I-S detector applications. The junction quality depends critically upon the properties of the NbN surface, and seems to correlate well with the UV/visible reflectivity of this surface.

    13. Grand Junction, Colorado, Disposal Site Long-Term Surveillance and Maintenance Program Fact Sheet, July 2001

      Office of Legacy Management (LM)

      Grand Junction Disposal Site Uranium ore was processed at the Climax millsite at Grand Junction, Colorado, between 1951 and 1970. The milling operations created process-related waste and tailings, a sandlike material containing radioactive materials and other contaminants. The tailings were an ideal and inexpensive construction material suitable for concrete, mortar, and fill. Accordingly, the tailings were widely used in the Grand Junction area for these purposes. The U.S. Department of Energy

    14. Comparative life-cycle energy payback analysis of multi-junction a-SiGe and nanocrystalline/a-Si modules

      SciTech Connect (OSTI)

      Fthenakis, V.; Kim, H.

      2010-07-15

      Despite the publicity of nanotechnologies in high tech industries including the photovoltaic sector, their life-cycle energy use and related environmental impacts are understood only to a limited degree as their production is mostly immature. We investigated the life-cycle energy implications of amorphous silicon (a-Si) PV designs using a nanocrystalline silicon (nc-Si) bottom layer in the context of a comparative, prospective life-cycle analysis framework. Three R and D options using nc-Si bottom layer were evaluated and compared to the current triple-junction a-Si design, i.e., a-Si/a-SiGe/a-SiGe. The life-cycle energy demand to deposit nc-Si was estimated from parametric analyses of film thickness, deposition rate, precursor gas usage, and power for generating gas plasma. We found that extended deposition time and increased gas usages associated to the relatively high thickness of nc-Si lead to a larger primary energy demand for the nc-Si bottom layer designs, than the current triple-junction a-Si. Assuming an 8% conversion efficiency, the energy payback time of those R and D designs will be 0.7-0.9 years, close to that of currently commercial triple-junction a-Si design, 0.8 years. Future scenario analyses show that if nc-Si film is deposited at a higher rate (i.e., 2-3 nm/s), and at the same time the conversion efficiency reaches 10%, the energy-payback time could drop by 30%.

    15. 2011 Annual Planning Summary for Office of Legacy Management (LM), Grand Junction (See LM APS)

      Broader source: Energy.gov [DOE]

      The ongoing and projected Environmental Assessments and Environmental Impact Statements for 2011 and 2012 within the Office of Legacy Management (LM), Grand Junction (See LM APS).

    16. Proper Orthogonal Decomposition of the Flow in a T-Junction ...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      T-Junction (In: Advances in Nuclear Power Plants) Authors: Merzari, E., Pointer, W.D., ... Congress on Advances in Nuclear Power Plants 2010 (ICAPP 2010) Publisher: Curran ...

    17. NREL and CSEM Jointly Set New Efficiency Record with Dual-Junction...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      NREL and CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell January 5, 2016 Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) and...

    18. AmeriFlux US-Bn1 Bonanza Creek, 1920 Burn site near Delta Junction

      DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

      Randerson, James [University of California, Irvine

      2016-01-01

      This is the AmeriFlux version of the carbon flux data for the site US-Bn1 Bonanza Creek, 1920 Burn site near Delta Junction. Site Description - The Delta Junction 1920 Control site is located near Delta Junction, just to the north of the Alaska Range in interior Alaska. All three Delta Junction sites are within a 15-km radius of one another. Composed of a combination of alluvial outwashes, floodplains, and low terraces dissected by glacial streams originating in the nearby Alaska Range. In 2001, total aboveground biomass consisted almost entirely of black spruce (Picea mariana).

    19. NREL and CSEM Jointly Set New Efficiency Record with Dual-Junction...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      NREL and CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell January 5, 2016 Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) and ...

    20. Engineering ferroelectric tunnel junctions through potential profile shaping

      SciTech Connect (OSTI)

      Boyn, S.; Garcia, V. Fusil, S.; Carrtro, C.; Garcia, K.; Collin, S.; Deranlot, C.; Bibes, M.; Barthlmy, A.

      2015-06-01

      We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

    1. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

      SciTech Connect (OSTI)

      Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

      2015-10-05

      Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

    2. Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions

      SciTech Connect (OSTI)

      Jeong, J. H.; Endoh, T.; Kim, Y.; Kim, W. K.; Park, S. O.

      2014-05-07

      To identify the degradation mechanism in magnetic tunnel junctions (MTJs) using hydrogen, the properties of the MTJs were measured by applying an additional hydrogen etch process and a hydrogen plasma process to the patterned MTJs. In these studies, an additional 50?s hydrogen etch process caused the magnetoresistance (MR) to decrease from 103% to 14.7% and the resistance (R) to increase from 6.5?k? to 39?k?. Moreover, an additional 500?s hydrogen plasma process decreased the MR from 103% to 74% and increased R from 6.5?k? to 13.9?k?. These results show that MTJs can be damaged by the hydrogen plasma process as well as by the hydrogen etch process, as the atomic bonds in MgO may break and react with the exposed hydrogen gas. Compounds such as MgO hydrate very easily. We also calculated the damaged layer width (DLW) of the patterned MTJs after the hydrogen etching and plasma processes, to evaluate the downscaling limitations of spin-transfer-torque magnetic random-access memory (STT-MRAM) devices. With these calculations, the maximum DLWs at each side of the MTJ, generated by the etching and plasma processes, were 23.8?nm and 12.8?nm, respectively. This result validates that the hydrogen-based MTJ patterning processes cannot be used exclusively in STT-MRAMs beyond 20?nm.

    3. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

      DOE Patents [OSTI]

      Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

      2005-02-01

      A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

    4. Layered electrode for electrochemical cells

      DOE Patents [OSTI]

      Swathirajan, Swathy; Mikhail, Youssef M.

      2001-01-01

      There is provided an electrode structure comprising a current collector sheet and first and second layers of electrode material. Together, the layers improve catalyst utilization and water management.

    5. Front contact solar cell with formed electrically conducting layers on the front side and backside

      DOE Patents [OSTI]

      Cousins, Peter John

      2012-06-26

      A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell.

    6. Layered semiconductor neutron detectors

      DOE Patents [OSTI]

      Mao, Samuel S; Perry, Dale L

      2013-12-10

      Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

    7. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint

      SciTech Connect (OSTI)

      Geisz, J. F.; Kurtz, S. R.; Wanlass, M. W.; Ward, J. S.; Duda, A.; Friedman, D. J.; Olson, J. M.; McMahon, W. E.; Moriarty, T. E.; Kiehl, J. T.; Romero, M. J.; Norman, A. G.; Jones, K. M.

      2008-05-01

      We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.

    8. December 2015 Groundwater and Surface Waater Sampling at the Grand Junction, Colorado, Site

      Office of Legacy Management (LM)

      and Surface Water Sampling at the Grand Junction, Colorado, Site March 2016 LMS/GJO/S01215 This page intentionally left blank U.S. Department of Energy DVP-December 2015, Grand Junction, Colorado March 2016 RIN 15117528 Page i Contents Sampling Event Summary ...............................................................................................................1 Data Assessment Summary

    9. Josephson tunnel junction with polycrystalline silicon, germanium or silicon-germanium alloy tunneling barrier

      SciTech Connect (OSTI)

      Kroger, H.

      1980-09-02

      A Josephson tunnel junction device having niobium nitride superconductive electrodes includes a polycrystalline semiconductor tunnelling barrier therebetween comprised of silicon, germanium or an alloy thereof preferably deposited on the lower superconductive electrodes by chemical vapor deposition. The barrier height of the junction is precisely controlled by precision doping of the semiconductor material.

    10. Spontaneous Ferroelectric Order in a Bent-Core Smectic Liquid Crystal of Fluid Orthorhombic Layers

      SciTech Connect (OSTI)

      R Reddy; C Zhu; R Shao; E Korblova; T Gong; Y Shen; M Glaser; J Maclennan; D Walba; N Clark

      2011-12-31

      Macroscopic polarization density, characteristic of ferroelectric phases, is stabilized by dipolar intermolecular interactions. These are weakened as materials become more fluid and of higher symmetry, limiting ferroelectricity to crystals and to smectic liquid crystal stackings of fluid layers. We report the SmAP{sub F}, the smectic of fluid polar orthorhombic layers that order into a three-dimensional ferroelectric state, the highest-symmetry layered ferroelectric possible and the highest-symmetry ferroelectric material found to date. Its bent-core molecular design employs a single flexible tail that stabilizes layers with untilted molecules and in-plane polar ordering, evident in monolayer-thick freely suspended films. Electro-optic response reveals the three-dimensional orthorhombic ferroelectric structure, stabilized by silane molecular terminations that promote parallel alignment of the molecular dipoles in adjacent layers.

    11. Fabrication of contacts for silicon solar cells including printing burn through layers

      SciTech Connect (OSTI)

      Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

      2014-06-24

      A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

    12. Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

      SciTech Connect (OSTI)

      Imtiaz, Atif; Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel; Weber, Joel C.; Coakley, Kevin J.

      2014-06-30

      We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ?}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ?}? effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ?} images.

    13. Dislocation Dynamics Simulations of Junctions in Hexagonal Close-Packed Crystals

      SciTech Connect (OSTI)

      Wu, C; Aubry, S; Chung, P; Arsenlis, A

      2011-12-05

      The formation and strength of dislocations in the hexagonal closed packed material beryllium are studied through dislocation junctions and the critical stress required to break them. Dislocation dynamics calculations (using the code ParaDiS) of junction maps are compared to an analytical line tension approximation in order to validate our model. Results show that the two models agree very well. Also the critical shear stress necessary to break 30{sup o} - 30{sup o} and 30{sup o} - 90{sup o} dislocation junctions is computed numerically. Yield surfaces are mapped out for these junctions to describe their stability regions as function of resolved shear stresses on the glide planes. The example of two non-coplanar binary dislocation junctions with slip planes [2-1-10] (01-10) and [-12-10] (0001) corresponding to a prismatic and basal slip respectively is chosen to verify and validate our implementation.

    14. CNEEC - Atomic Layer Deposition Tutorial by Stacey Bent

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      Atomic Layer Deposition

    15. Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

      SciTech Connect (OSTI)

      Woodyard, J.R.

      1995-10-01

      Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. The authors report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to `fit` the spectral irradiance of the dual-source solar simulator to WRL AMO data.

    16. Ischemic preconditioning enhances integrity of coronary endothelial tight junctions

      SciTech Connect (OSTI)

      Li, Zhao; Jin, Zhu-Qiu

      2012-08-31

      Highlights: Black-Right-Pointing-Pointer Cardiac tight junctions are present between coronary endothelial cells. Black-Right-Pointing-Pointer Ischemic preconditioning preserves the structural and functional integrity of tight junctions. Black-Right-Pointing-Pointer Myocardial edema is prevented in hearts subjected to ischemic preconditioning. Black-Right-Pointing-Pointer Ischemic preconditioning enhances translocation of ZO-2 from cytosol to cytoskeleton. -- Abstract: Ischemic preconditioning (IPC) is one of the most effective procedures known to protect hearts against ischemia/reperfusion (IR) injury. Tight junction (TJ) barriers occur between coronary endothelial cells. TJs provide barrier function to maintain the homeostasis of the inner environment of tissues. However, the effect of IPC on the structure and function of cardiac TJs remains unknown. We tested the hypothesis that myocardial IR injury ruptures the structure of TJs and impairs endothelial permeability whereas IPC preserves the structural and functional integrity of TJs in the blood-heart barrier. Langendorff hearts from C57BL/6J mice were prepared and perfused with Krebs-Henseleit buffer. Cardiac function, creatine kinase release, and myocardial edema were measured. Cardiac TJ function was evaluated by measuring Evans blue-conjugated albumin (EBA) content in the extravascular compartment of hearts. Expression and translocation of zonula occludens (ZO)-2 in IR and IPC hearts were detected with Western blot. A subset of hearts was processed for the observation of ultra-structure of cardiac TJs with transmission electron microscopy. There were clear TJs between coronary endothelial cells of mouse hearts. IR caused the collapse of TJs whereas IPC sustained the structure of TJs. IR increased extravascular EBA content in the heart and myocardial edema but decreased the expression of ZO-2 in the cytoskeleton. IPC maintained the structure of TJs. Cardiac EBA content and edema were reduced in IPC hearts. IPC

    17. Cooperative Research between NREL and Solar Junction Corp: Cooperative Research and Development Final Report, CRADA Number CRD-08-306

      SciTech Connect (OSTI)

      Friedman, D.

      2015-03-01

      NREL and Solar Junction Corp. will perform cooperative research on materials and devices that are alternatives to standard approaches with the goal of improving solar cell efficiency while lowering cost. The general purpose of this work is to model the performance of a multi-junction concentrator cell of Solar Junction, Inc. design under normal concentrator operating conditions.

    18. Chemical Fabrication of Heterometallic Nanogaps for Molecular Transport Junctions

      SciTech Connect (OSTI)

      Chen, Xiaodong; Yeganeh, Sina; Qin, Lidong; Li, Shuzhou; Xue, Can; Braunschweig, Adam B.; Schatz, George C.; Ratner, Mark A.; Mirkin, Chad A.

      2009-01-01

      We report a simple and reproducible method for fabricating heterometallic nanogaps, which are made of two different metal nanorods separated by a nanometer-sized gap. The method is based upon on-wire lithography, which is a chemically enabled technique used to synthesize a wide variety of nanowire-based structures (e.g., nanogaps and disk arrays). This method can be used to fabricate pairs of metallic electrodes, which exhibit distinct work functions and are separated by gaps as small as 2 nm. Furthermore, we demonstrate that a symmetric thiol-terminated molecule can be assembled into such heterometallic nanogaps to form molecular transport junctions (MTJs) that exhibit molecular diode behavior. Theoretical calculations demonstrate that the coupling strength between gold and sulfur (Au-S) is 2.5 times stronger than that of Pt-S. In addition, the structures form Raman hot spots in the gap, allowing the spectroscopic characterization of the molecules that make up the MTJs.

    19. Performance model assessment for multi-junction concentrating photovoltaic systems.

      SciTech Connect (OSTI)

      Stein, Joshua S.; Riley, Daniel M.; McConnell, Robert.; Sahm, Aaron; Crawford, Clark; King, David L.; Cameron, Christopher P.; Foresi, James S.

      2010-03-01

      Four approaches to modeling multi-junction concentrating photovoltaic system performance are assessed by comparing modeled performance to measured performance. Measured weather, irradiance, and system performance data were collected on two systems over a one month period. Residual analysis is used to assess the models and to identify opportunities for model improvement. Large photovoltaic systems are typically developed as projects which supply electricity to a utility and are owned by independent power producers. Obtaining financing at favorable rates and attracting investors requires confidence in the projected energy yield from the plant. In this paper, various performance models for projecting annual energy yield from Concentrating Photovoltaic (CPV) systems are assessed by comparing measured system output to model predictions based on measured weather and irradiance data. The results are statistically analyzed to identify systematic error sources.

    20. Fluxons in a triangular set of coupled long Josephson junctions

      SciTech Connect (OSTI)

      Yukon, Stanford P.; Malomed, Boris A.

      2015-09-15

      We report results of an analysis of the dynamics of magnetic flux solitons in the system of three long Josephson junctions between three bulk superconductors that form a prism. The system is modeled by coupled sine-Gordon equations for the phases of the junctions. The Aharonov-Bohm constraint takes into account the axial magnetic flux enclosed by the prism and reduces the system from three independent phases to two. The equations of motion for the phases include dissipative terms, and a control parameter δ which accounts for the deviation of the enclosed flux from half a quantum. Analyzing the effective potential of the coupled equations, we identify different species of topological and non-topological phase solitons (fluxons) in this system. In particular, subkinks with fractional topological charges ±1/3 and ±2/3, confined inside integer-charge fluxons, may be mapped onto the root diagrams for mesons and baryons in the original quark model of hadrons. Solutions for straight-line kinks and for two types of non-topological solitons are obtained in an explicit analytical form. Numerical tests demonstrate that the former species is unstable against breakup into pairs of separating single-fluxon kinks. The non-topological kinks feature metastability, eventually breaking up into fluxon-antifluxon pairs. Free fractional-fluxon kinks, that connect different potential minima and are, accordingly, pulled by the potential difference, are also considered. Using the momentum-balance method, we predict the velocity at which these kinks should move in the presence of the dissipation. Numerical tests demonstrate that the analysis predicts the velocity quite closely. Higher-energy static solutions for all of the stable kink types mentioned above, as well as kinks connecting false vacua, are found by means of the shooting method. Inelastic collisions among the stable fractional and single-fluxon kinks are investigated numerically.

    1. Volcanic hazards of the Idaho National Engineering Laboratory and adjacent areas

      SciTech Connect (OSTI)

      Hackett, W.R.; Smith, R.P.

      1994-12-01

      Potential volcanic hazards are assessed, and hazard zone maps are developed for the Idaho National Engineering Laboratory (INEL) and adjacent areas. The basis of the hazards assessment and mapping is the past volcanic history of the INEL region, and the apparent similarity of INEL volcanism with equivalent, well-studied phenomena in other regions of active volcanism, particularly Hawaii and Iceland. The most significant hazards to INEL facilities are associated with basaltic volcanism, chiefly lava flows, which move slowly and mainly threaten property by inundation or burning. Related hazards are volcanic gases and tephra, and ground disturbance associated with the ascent of magma under the volcanic zones. Several volcanic zones are identified in the INEL area. These zones contain most of the volcanic vents and fissures of the region and are inferred to be the most probable sites of future INEL volcanism. Volcanic-recurrence estimates are given for each of the volcanic zones based on geochronology of the lavas, together with the results of field and petrographic investigations concerning the cogenetic relationships of INEL volcanic deposits and associated magma intrusion. Annual probabilities of basaltic volcanism within the INEL volcanic zones range from 6.2 {times} 10{sup {minus}5} per year (average 16,000-year interval between eruptions) for the axial volcanic zone near the southern INEL boundary and the Arco volcanic-rift zone near the western INEL boundary, to 1 {times} 10{sup {minus}5} per year (average 100,000-year interval between eruptions) for the Howe-East Butte volcanic rift zone, a geologically old and poorly defined feature of the central portion of INEL. Three volcanic hazard zone maps are developed for the INEL area: lava flow hazard zones, a tephra (volcanic ash) and gas hazard zone, and a ground-deformation hazard zone. The maps are useful in land-use planning, site selection, and safety analysis.

    2. Method and Apparatus for Remote Delivery and Manipulation of a Miniature Tool Adjacent a Work Piece in a Restricted Space

      DOE Patents [OSTI]

      Sale, Christopher H.; Kaltenbaugh, Daniel R.

      2004-08-10

      An apparatus for remote delivery and manipulation of a miniature tool adjacent a work piece in a restricted space, includes a tool camer, a camage for manipulating the tool carrier relative to the work piece, a first actuator for operating the carnage, and an optional remote secondary operating actuator for operating the first actuator.

    3. Realistic-contact-induced enhancement of rectifying in carbon-nanotube/graphene-nanoribbon junctions

      SciTech Connect (OSTI)

      Zhang, Xiang-Hua [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China); Department of Electrical and Information Engineering, Hunan Institute of Engineering, Xiangtan 411101 (China); Li, Xiao-Fei, E-mail: xfli@theochem.kth.se [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Ling-Ling, E-mail: llwang@hnu.edu.cn; Xu, Liang; Luo, Kai-Wu [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China)

      2014-03-10

      Carbon-nanotube/graphene-nanoribbon junctions were recently fabricated by the controllable etching of single-walled carbon-nanotubes [Wei et al., Nat. Commun. 4, 1374 (2013)] and their electronic transport properties were studied here. First principles results reveal that the transmission function of the junctions show a heavy dependence on the shape of contacts, but rectifying is an inherent property which is insensitive to the details of contacts. Interestingly, the rectifying ratio is largely enhanced in the junction with a realistic contact and the enhancement is insensitive to the details of contact structures. The stability of rectifying suggests a significant feasibility to manufacture realistic all-carbon rectifiers in nanoelectronics.

    4. Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios

      SciTech Connect (OSTI)

      Khan, Aurangzeb; Yamaguchi, Masafumi; Takamoto, Tatsuya

      2004-10-11

      A study of the performance of single-junction InGaP/GaAs and dual-junction InGaP/GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (J{sub P}) and valley current (J{sub V}) densities should be greater than the short-circuit current density (J{sub sc}) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (J{sub P}) and valley current density (J{sub V}) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP/GaAs tandem solar cell can be enhanced even under low concentration ratios.

    5. Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

      SciTech Connect (OSTI)

      Wang, Shouguo; Ward, R. C. C.; Zhang, Xiaoguang; Kohn, A.; Ma, Q. L.; Zhang, J.; Liu, H. F.; Han, Prof. X. F.

      2012-01-01

      Following predictions by first-principles theory of huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), measured magnetoresistance (MR) ratio about 200% at room temperature (RT) have been reported in MgO-based epitaxial MTJs. Recently, MR ratio of about 600% has been reported at RT in MgO-based amorphous MTJs with core structure of CoFeB/MgO/CoFeB grown by magnetron sputtering with amorphous CoFeB layers. The sputtered CoFeB/MgO/CoFeB MTJs shows a great potential application in spintronic devices. Although epitaxial structure will probably not be used in devices, it remains an excellent model system to compare theoretical calculations with experimental results and to enhance our understanding of the spin dependent tunneling. Both theoretical calculations and experimental results clearly indicate that the interfacial structure plays a crucial role on coherent tunneling across single crystalMgO barrier, especially in epitaxial MgO-based MTJs grown by molecular beam epitaxy (MBE). Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism have been used for interface characterization. However, no consistent viewpoint has been reached, and this is still an open issue. In this article, recent studies on the interface characterization in MgO-based epitaxial MTJs will be introduced, with a focus on research by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and spin dependent tunneling spectroscopy.

    6. Buried oxide layer in silicon

      DOE Patents [OSTI]

      Sadana, Devendra Kumar; Holland, Orin Wayne

      2001-01-01

      A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

    7. Metal deposition using seed layers

      DOE Patents [OSTI]

      Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

      2013-11-12

      Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

    8. Updated Radiation Exhibit Unveiled at Math and Science Center in Grand Junction, Colorado

      Broader source: Energy.gov [DOE]

      A newly updated radiation exhibit, created by the U.S. Department of Energy (DOE) Office of Legacy Management (LM) office in Grand Junction, Colorado, was recently unveiled at the John McConnell...

    9. Method And Apparatus For Reducing Sample Dispersion In Turns And Junctions Of Micro-Channel Systems

      DOE Patents [OSTI]

      Griffiths, Stewart K. , Nilson, Robert H.

      2004-05-11

      What is disclosed pertains to improvement in the performance of microchannel devices by providing turns, wyes, tees, and other junctions that produce little dispersion of a sample as it traverses the turn or junction. The reduced dispersion results from contraction and expansion regions that reduce the cross-sectional area over some portion of the turn or junction. By carefully designing the geometries of these regions, sample dispersion in turns and junctions is reduced to levels comparable to the effects of ordinary diffusion. The low dispersion features are particularly suited for microfluidic devices and systems using either electromotive force, pressure, or combinations thereof as the principle of fluid transport. Such microfluidic devices and systems are useful for separation of components, sample transport, reaction, mixing, dilution or synthesis, or combinations thereof.

    10. Technology Solutions Case Study: New Insights for Improving the Designs of Flexible Duct Junction Boxes

      SciTech Connect (OSTI)

      2014-01-01

      In this project, IBACOS explored the relationships between pressure and physical configurations of flexible duct junction boxes by using computational fluid dynamics simulations to predict individual box parameters and total system pressure, thereby ensuring improved HVAC performance.

    11. A Manufacturing Cost Analysis Relevant to Single- and Dual-Junction...

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      A Manufacturing Cost Analysis Relevant to Single- and Dual-Junction Photovoltaic Cells Fabricated with III-Vs and III-Vs Grown on Silicon A Manufacturing Cost Analysis Relevant to ...

    12. Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

      SciTech Connect (OSTI)

      Geisz, John F.; France, Ryan M.; Steiner, Myles A.; Friedman, Daniel J.; Garca, Ivn

      2014-09-26

      Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be applied to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.

    13. Materials en Multi-junction Solar Cells to Push CPV Efficiencies...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      ceem.ucsb.edurss News and Events - Center for Energy Efficient Materials en Multi-junction Solar Cells to Push CPV Efficiencies Beyond 50% http:www.compoundsemiconductor.net...

    14. Highly efficient organic multi-junction solar cells with a thiophene based donor material

      SciTech Connect (OSTI)

      Meerheim, Rico Krner, Christian; Leo, Karl

      2014-08-11

      The efficiency of organic solar cells can be increased by serial stacked subcells even upon using the same absorber material. For the multi-junction devices presented here, we use the small molecule donor material DCV5T-Me. The subcell currents were matched by optical transfer matrix simulation, allowing an efficiency increase from 8.3% for a single junction up to 9.7% for a triple junction cell. The external quantum efficiency of the subcells, measured under appropriate light bias illumination, is spectrally shifted due to the microcavity of the complete stack, resulting in a broadband response and an increased cell current. The increase of the power conversion efficiency upon device stacking is even stronger for large area cells due to higher influence of the resistance of the indium tin oxide anode, emphasizing the advantage of multi-junction devices for large-area applications.

    15. AmeriFlux US-Bn2 Bonanza Creek, 1987 Burn site near Delta Junction

      DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

      Randerson, James [University of California, Irvine

      2016-01-01

      This is the AmeriFlux version of the carbon flux data for the site US-Bn2 Bonanza Creek, 1987 Burn site near Delta Junction. Site Description - The Delta Junction 1987 Burn site is located near Delta Junction, just to the north of the Alaska Range in interior Alaska. All three Delta Junction sites are within a 15-km radius of one another. Composed of a combination of alluvial outwashes, floodplains, and low terraces dissected by glacial streams originating in the nearby Alaska Range. The Granite Creek fire burned ~20,000 ha of black spruce (Picea mariana) during 1987. Approximately half of the dead boles remained upright in 2004, while the other half had fallen over or had become entangled with other boles.

    16. AmeriFlux US-Bn3 Bonanza Creek, 1999 Burn site near Delta Junction

      DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

      Randerson, James [University of California, Irvine

      2016-01-01

      This is the AmeriFlux version of the carbon flux data for the site US-Bn3 Bonanza Creek, 1999 Burn site near Delta Junction. Site Description - The Delta Junction 1999 Burn site is located near Delta Junction, just to the north of the Alaska Range in interior Alaska. All three Delta Junction sites are within a 15-km radius of one another. Composed of a combination of alluvial outwashes, floodplains, and low terraces dissected by glacial streams originating in the nearby Alaska Range. The Donnelly Flats fire burned ~7,600 ha of black spruce (Picea mariana) during June 1999. The boles of the black spruce remained standing 3 years after the fire. 70% of the surface was not covered by vascular plants.

    17. Low-bias negative differential resistance effect in armchair graphene nanoribbon junctions

      SciTech Connect (OSTI)

      Li, Suchun; Gan, Chee Kwan; Son, Young-Woo; Feng, Yuan Ping; Quek, Su Ying

      2015-01-05

      Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, we can obtain a negative differential resistance (NDR) effect. Owing to the intrinsic properties of the AGNR junctions, the on-set bias reaches as low as ∼0.2 V and the valley current almost vanishes. We further show that such NDR effect is robust against details of the atomic structure of the junction, substrate, and whether the junction is made by etching or by hydrogenation.

    18. Preservationists Tour Historic Log Cabin at the Grand Junction, Colorado, Office

      Office of Energy Efficiency and Renewable Energy (EERE)

      A working committee of local historic preservation specialists held their monthly meeting at the U.S. Department of Energy Office of Legacy Management (LM) Grand Junction, Colorado, Office on...

    19. Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park Dedication and Open House

      Broader source: Energy.gov [DOE]

      The U.S. Department of Energy (DOE) Office of Legacy Management (LM) held an open house and park dedication at the Grand Junction, Colorado, Office to commemorate its place in the Manhattan Project...

    20. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

      DOE Patents [OSTI]

      Wanlass, Mark W.

      1994-01-01

      A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

    1. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

      SciTech Connect (OSTI)

      Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

      2006-01-01

      We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

    2. Quantum interference in thermoelectric molecular junctions: A toy model perspective

      SciTech Connect (OSTI)

      Nozaki, Daijiro E-mail: research@nano.tu-dresden.de; Avdoshenko, Stas M.; Sevinçli, Hâldun; Cuniberti, Gianaurelio

      2014-08-21

      Quantum interference (QI) phenomena between electronic states in molecular circuits offer a new opportunity to design new types of molecular devices such as molecular sensors, interferometers, and thermoelectric devices. Controlling the QI effect is a key challenge for such applications. For the development of single molecular devices employing QI effects, a systematic study of the relationship between electronic structure and the quantum interference is needed. In order to uncover the essential topological requirements for the appearance of QI effects and the relationship between the QI-affected line shape of the transmission spectra and the electronic structures, we consider a homogeneous toy model where all on-site energies are identical and model four types of molecular junctions due to their topological connectivities. We systematically analyze their transmission spectra, density of states, and thermoelectric properties. Even without the degree of freedom for on-site energies an asymmetric Fano peak could be realized in the homogeneous systems with the cyclic configuration. We also calculate the thermoelectric properties of the model systems with and without fluctuation of on-site energies. Even under the fluctuation of the on-site energies, the finite thermoelectrics are preserved for the Fano resonance, thus cyclic configuration is promising for thermoelectric applications. This result also suggests the possibility to detect the cyclic configuration in the homogeneous systems and the presence of the QI features from thermoelectric measurements.

    3. Computational Fluid Dynamics Analysis of Flexible Duct Junction Box Design

      SciTech Connect (OSTI)

      Beach, Robert; Prahl, Duncan; Lange, Rich

      2013-12-01

      IBACOS explored the relationships between pressure and physical configurations of flexible duct junction boxes by using computational fluid dynamics (CFD) simulations to predict individual box parameters and total system pressure, thereby ensuring improved HVAC performance. Current Air Conditioning Contractors of America (ACCA) guidance (Group 11, Appendix 3, ACCA Manual D, Rutkowski 2009) allows for unconstrained variation in the number of takeoffs, box sizes, and takeoff locations. The only variables currently used in selecting an equivalent length (EL) are velocity of air in the duct and friction rate, given the first takeoff is located at least twice its diameter away from the inlet. This condition does not account for other factors impacting pressure loss across these types of fittings. For each simulation, the IBACOS team converted pressure loss within a box to an EL to compare variation in ACCA Manual D guidance to the simulated variation. IBACOS chose cases to represent flows reasonably correlating to flows typically encountered in the field and analyzed differences in total pressure due to increases in number and location of takeoffs, box dimensions, and velocity of air, and whether an entrance fitting is included. The team also calculated additional balancing losses for all cases due to discrepancies between intended outlet flows and natural flow splits created by the fitting. In certain asymmetrical cases, the balancing losses were significantly higher than symmetrical cases where the natural splits were close to the targets. Thus, IBACOS has shown additional design constraints that can ensure better system performance.

    4. Spin Josephson effect in topological superconductor-ferromagnet junction

      SciTech Connect (OSTI)

      Ren, C. D.; Wang, J.

      2014-03-21

      The composite topological superconductor (TS), made of one-dimensional spin-orbit coupled nanowire with proximity-induced s-wave superconductivity, is not a pure p-wave superconductor but still has a suppressed s-wave pairing. We propose to probe the spin texture of the p-wave pairing in this composite TS by examining possible spin supercurrents in an unbiased TS/ferromagnet junction. It is found that both the exchange-coupling induced and spin-flip reflection induced spin currents exist in the setup and survive even in the topological phase. We showed that besides the nontrivial p-wave pairing state accounting for Majorana Fermions, there shall be a trivial p-wave pairing state that contributes to spin supercurrent. The trivial p-wave pairing state is diagnosed from the mixing effect between the suppressed s-wave pairing and the topologically nontrivial p-wave pairing. The d vector of the TS is proved not to be rigorously perpendicular to the spin projection of p-wave pairings. Our findings are also confirmed by the Kitaev's p-wave model with a nonzero s-wave pairing.

    5. Electron transfer statistics and thermal fluctuations in molecular junctions

      SciTech Connect (OSTI)

      Goswami, Himangshu Prabal; Harbola, Upendra

      2015-02-28

      We derive analytical expressions for probability distribution function (PDF) for electron transport in a simple model of quantum junction in presence of thermal fluctuations. Our approach is based on the large deviation theory combined with the generating function method. For large number of electrons transferred, the PDF is found to decay exponentially in the tails with different rates due to applied bias. This asymmetry in the PDF is related to the fluctuation theorem. Statistics of fluctuations are analyzed in terms of the Fano factor. Thermal fluctuations play a quantitative role in determining the statistics of electron transfer; they tend to suppress the average current while enhancing the fluctuations in particle transfer. This gives rise to both bunching and antibunching phenomena as determined by the Fano factor. The thermal fluctuations and shot noise compete with each other and determine the net (effective) statistics of particle transfer. Exact analytical expression is obtained for delay time distribution. The optimal values of the delay time between successive electron transfers can be lowered below the corresponding shot noise values by tuning the thermal effects.

    6. Templated, layered manganese phosphate

      DOE Patents [OSTI]

      Thoma, Steven G.; Bonhomme, Francois R.

      2004-08-17

      A new crystalline maganese phosphate composition having an empirical formula: O). The compound was determined to crystallize in the trigonal space group P-3c1 with a=8.8706(4) .ANG., c=26.1580(2) .ANG., and V (volume)=1783 .ANG..sup.3. The structure consists of sheets of corner sharing Mn(II)O.sub.4 and PO.sub.4 tetrahedra with layers of (H.sub.3 NCH.sub.2 CH.sub.2).sub.3 N and water molecules in-between. The pronated (H.sub.3 NCH.sub.2 CH.sub.2).sub.3 N molecules provide charge balancing for the inorganic sheets. A network of hydrogen bonds between water molecules and the inorganic sheets holds the structure together.

    7. Method and apparatus for reducing sample dispersion in turns and junctions of microchannel systems

      DOE Patents [OSTI]

      Griffiths, Stewart K.; Nilson, Robert H.

      2001-01-01

      The performance of microchannel devices is improved by providing turns, wyes, tees, and other junctions that produce little dispersions of a sample as it traverses the turn or junction. The reduced dispersion results from contraction and expansion regions that reduce the cross-sectional area over some portion of the turn or junction. By carefully designing the geometries of these regions, sample dispersion in turns and junctions is reduced to levels comparable to the effects of ordinary diffusion. A numerical algorithm was employed to evolve low-dispersion geometries by computing the electric or pressure field within candidate configurations, sample transport through the turn or junction, and the overall effective dispersion. These devices should greatly increase flexibility in the design of microchannel devices by permitting the use of turns and junctions that do not induce large sample dispersion. In particular, the ability to fold electrophoretic and electrochrornatographic separation columns will allow dramatic improvements in the miniaturization of these devices. The low-lispersion devices are particularly suited to electrochromatographic and electrophoretic separations, as well as pressure-driven chromatographic separation. They are further applicable to microfluidic systems employing either electroosrnotic or pressure-driven flows for sample transport, reaction, mixing, dilution or synthesis.

    8. Structure–property relationships in atomic-scale junctions: Histograms and beyond

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Mark S. Hybertsen; Venkataraman, Latha

      2016-03-03

      Over the past 10 years, there has been tremendous progress in the measurement, modeling and understanding of structure–function relationships in single molecule junctions. Numerous research groups have addressed significant scientific questions, directed both to conductance phenomena at the single molecule level and to the fundamental chemistry that controls junction functionality. Many different functionalities have been demonstrated, including single-molecule diodes, optically and mechanically activated switches, and, significantly, physical phenomena with no classical analogues, such as those based on quantum interference effects. Experimental techniques for reliable and reproducible single molecule junction formation and characterization have led to this progress. In particular, themore » scanning tunneling microscope based break-junction (STM-BJ) technique has enabled rapid, sequential measurement of large numbers of nanoscale junctions allowing a statistical analysis to readily distinguish reproducible characteristics. Furthermore, harnessing fundamental link chemistry has provided the necessary chemical control over junction formation, enabling measurements that revealed clear relationships between molecular structure and conductance characteristics.« less

    9. Processes for multi-layer devices utilizing layer transfer

      DOE Patents [OSTI]

      Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

      2015-02-03

      A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

    10. Calculation of axial charge spreading in carbon nanotubes and nanotube Y junctions during STM measurement

      SciTech Connect (OSTI)

      Mark, Geza I.; Biro, Laszlo P.; Lambin, Philippe

      2004-09-15

      Distribution of the probability current and the probability density of wave packets was calculated for nanotubes and nanotube Y junctions by solving the three dimensional time-dependent Schroedinger equation for a jellium potential model of the scanning tunneling microscope (STM) tip-nanotube-support system. Four systems were investigated: an infinite single wall nanotube (SWNT) as reference case, a capped SWNT protruding a step of the support surface, a quantum dot (finite tube without support), and a SWNT Y junction. It is found that the spatial distribution of the probability current flowing into the sample is decided by the electron probability density of the tube and by the oscillation in time of the probability current, which in turn is governed by the quasibound states on the tube. For the infinite tube the width of the axial spreading of the wave packet during tunneling is about 5 nm. When the STM tip is above that part of the tube which protrudes from the atomic scale step of the support surface it is found that the current flows ballistically along the tube and the total transmission is the same as for the infinite tube. In the case of quantum dot, however, the finite tube is first charged in a short time then it is discharged very slowly through the tip-nanotube tunnel junction. In the Y junction both the above the junction and off the junction tip positions were investigated. For a 1.2 nm displacement of the tip from the junction the wave packet still 'samples' the junction point which means that in STM and scanning tunneling spectroscopy experiments the signature of the junction should be still present for such tip displacement. For all tunneling situations analyzed the tunnel current is mainly determined by the tip-nanotube junction owing to its large resistance. The tunneling event through the STM model is characterized by two time scales, the nanotube is quickly 'charged' with the wave packet coming from the tip then this 'charge' flows into the

    11. Environmental monitoring report on the US Department of Energy's Grand Junction Projects Office facility, Grand Junction, Colorado, for calendar year 1987

      SciTech Connect (OSTI)

      Not Available

      1988-05-01

      This report presents results of environmental monitoring activities conducted in 1987 at the US Department of Energy's (DOE) Grand Junction Projects Office (GJPO) Facility in Colorado. The site is included under the DOE's Defense Decontamination and Decommissioning (Defense D and D) Program.

    12. Oxygen-reducing catalyst layer

      DOE Patents [OSTI]

      O'Brien, Dennis P.; Schmoeckel, Alison K.; Vernstrom, George D.; Atanasoski, Radoslav; Wood, Thomas E.; Yang, Ruizhi; Easton, E. Bradley; Dahn, Jeffrey R.; O'Neill, David G.

      2011-03-22

      An oxygen-reducing catalyst layer, and a method of making the oxygen-reducing catalyst layer, where the oxygen-reducing catalyst layer includes a catalytic material film disposed on a substrate with the use of physical vapor deposition and thermal treatment. The catalytic material film includes a transition metal that is substantially free of platinum. At least one of the physical vapor deposition and the thermal treatment is performed in a processing environment comprising a nitrogen-containing gas.

    13. Optoelectronic properties of Mg{sub 2}Si semiconducting layers with high absorption coefficients

      SciTech Connect (OSTI)

      Kato, Takashi; Sago, Yuichiro; Fujiwara, Hiroyuki

      2011-09-15

      In an attempt to develop a low-cost material for solar cell devices, polycrystalline magnesium silicide (poly-Mg{sub 2}Si) semiconducting layers have been prepared by applying rf magnetron sputtering using a Mg{sub 2}Si target. The optimum substrate temperature for the poly-Mg{sub 2}Si growth was found to be T{sub s} = 200 deg. C; the film deposition at higher temperatures leads to desorption of Mg atoms from the growing surface, while the amorphous phase formation occurs at room temperature. The poly-Mg{sub 2}Si layer deposited at T{sub s} = 200 deg. C shows the (111) preferential orientation with a uniform grain size of {approx}50 nm. The dielectric function of the poly-Mg{sub 2}Si layer has been determined accurately by spectroscopic ellipsometry. From the analysis, quite high absorption coefficients and an indirect gap of 0.77 eV in the poly-Mg{sub 2}Si layer have been confirmed. The above poly-Mg{sub 2}Si layer shows clear photoconductivity and can be applied as a narrow-gap bottom layer in multi-junction solar cell devices.

    14. Detection of alpha particles using DNA/Al Schottky junctions

      SciTech Connect (OSTI)

      Al-Ta'ii, Hassan Maktuff Jaber E-mail: vengadeshp@um.edu.my; Periasamy, Vengadesh E-mail: vengadeshp@um.edu.my; Amin, Yusoff Mohd

      2015-09-21

      Deoxyribonucleic acid or DNA can be utilized in an organic-metallic rectifying structure to detect radiation, especially alpha particles. This has become much more important in recent years due to crucial environmental detection needs in both peace and war. In this work, we fabricated an aluminum (Al)/DNA/Al structure and generated current–voltage characteristics upon exposure to alpha radiation. Two models were utilized to investigate these current profiles; the standard conventional thermionic emission model and Cheung and Cheung's method. Using these models, the barrier height, Richardson constant, ideality factor and series resistance of the metal-DNA-metal structure were analyzed in real time. The barrier height, Φ value calculated using the conventional method for non-radiated structure was 0.7149 eV, increasing to 0.7367 eV after 4 min of radiation. Barrier height values were observed to increase after 20, 30 and 40 min of radiation, except for 6, 8, and 10 min, which registered a decrease of about 0.67 eV. This was in comparison using Cheung and Cheung's method, which registered 0.6983 eV and 0.7528 eV for the non-radiated and 2 min of radiation, respectively. The barrier height values, meanwhile, were observed to decrease after 4 (0.61 eV) to 40 min (0.6945 eV). The study shows that conventional thermionic emission model could be practically utilized for estimating the diode parameters including the effect of series resistance. These changes in the electronic properties of the Al/DNA/Al junctions could therefore be utilized in the manufacture of sensitive alpha particle sensors.

    15. Layer-by-Layer Assembly of Enzymes on Carbon Nanotubes

      SciTech Connect (OSTI)

      Wang, Jun; Liu, Guodong; Lin, Yuehe

      2008-06-01

      The use of Layer-by-layer techniques for immobilizing several types of enzymes, e.g. glucose oxidase (GOx), horse radish oxidases(HRP), and choline oxidase(CHO) on carbon nanotubes and their applications for biosenseing are presented. The enzyme is immobilized on the negatively charged CNT surface by alternatively assembling a cationic polydiallyldimethyl-ammonium chloride (PDDA) layer and a enzyme layer. The sandwich-like layer structure (PDDA/enzyme/PDDA/CNT) formed by electrostatic assembling provides a favorable microenvironment to keep the bioactivity of enzyme and to prevent enzyme molecule leakage. The morphologies and electrocatalytic acitivity of the resulted enzyme film were characterized using TEM and electrochemical techniques, respectively. It was found that these enzyme-based biosensors are very sensitive, selective for detection of biomolecules, e.g. glucose, choline.

    16. Graphene Layer Growth: Collision of Migrating Five-MemberRings

      SciTech Connect (OSTI)

      Whitesides, Russell; Kollias, Alexander C.; Domin, Dominik; Lester Jr., William A.; Frenklach, Michael

      2005-12-02

      A reaction pathway is explored in which two cyclopenta groups combine on the zigzag edge of a graphene layer. The process is initiated by H addition to a five-membered ring, followed by opening of that ring and the formation of a six-membered ring adjacent to another five-membered ring. The elementary steps of the migration pathway are analyzed using density functional theory to examine the region of the potential energy surface associated with the pathway. The calculations are performed on a substrate modeled by the zigzag edge of tetracene. Based on the obtained energetics, the dynamics of the system are analyzed by solving the energy transfer master equations. The results indicate energetic and reaction-rate similarity between the cyclopenta combination and migration reactions. Also examined in the present study are desorption rates of migrating cyclopenta rings which are found to be comparable to cyclopenta ring migration.

    17. Method of junction formation for CIGS photovoltaic devices

      DOE Patents [OSTI]

      Delahoy, Alan E.

      2010-01-26

      Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

    18. Method of junction formation for CIGS photovoltaic devices

      DOE Patents [OSTI]

      Delahoy, Alan E.

      2006-03-28

      Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

    19. Leakage pathway layer for solar cell

      SciTech Connect (OSTI)

      Luan, Andy; Smith, David; Cousins, Peter; Sun, Sheng

      2015-12-01

      Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.

    20. Analysis of a four lamp flash system for calibrating multi-junction solar cells under concentrated light

      SciTech Connect (OSTI)

      Schachtner, Michael Prado, Marcelo Loyo; Reichmuth, S. Kasimir; Siefer, Gerald; Bett, Andreas W.

      2015-09-28

      It has been known for a long time that the precise characterization of multi-junction solar cells demands spectrally tunable solar simulators. The calibration of innovative multi-junction solar cells for CPV applications now requires tunable solar simulators which provide high irradiation levels. This paper describes the commissioning and calibration of a flash-based four-lamp simulator to be used for the measurement of multi-junction solar cells with up to four subcells under concentrated light.

    1. Octonary resistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Yue -Wei Yin; Tao, Jing; Huang, Wei -Chuan; Liu, Yu -Kuai; Yang, Sheng -Wei; Dong, Si -Ning; Zhu, Yi -Mei; Li, Qi; Li, Xiao -Guang

      2015-10-06

      General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45°more » and 90°) magnetic configurations. As a result, combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.« less

    2. Associations of Pd, U and Ag in the SiC layer of neutron-irradiated TRISO fuel

      SciTech Connect (OSTI)

      Lillo, Thomas; Rooyen, Isabella Van

      2015-05-01

      Knowledge of the associations and composition of fission products in the neutron irradiated SiC layer of high-temperature gas reactor TRISO fuel is important to the understanding of various aspects of fuel performance that presently are not well understood. Recently, advanced characterization techniques have been used to examine fuel particles from the Idaho National Laboratorys AGR-1 experiment. Nano-sized Ag and Pd precipitates were previously identified in grain boundaries and triple points in the SiC layer of irradiated TRISO nuclear fuel. Continuation of this initial research is reported in this paper and consists of the characterization of a relatively large number of nano-sized precipitates in three areas of the SiC layer of a single irradiated TRISO nuclear fuel particle using standardless EDS analysis on focused ion beam-prepared transmission electron microscopy samples. Composition and distribution analyses of these precipitates, which were located on grain boundaries, triple junctions and intragranular precipitates, revealed low levels, generally <10 atomic %, of palladium, silver and/or uranium with palladium being the most common element found. Palladium by itself, or associated with either silver or uranium, was found throughout the SiC layer. A small number of precipitates on grain boundaries and triple junctions were found to contain only silver or silver in association with palladium while uranium was always associated with palladium but never found by itself or in association with silver. Intergranular precipitates containing uranium were found to have migrated ~23 ?m along a radial direction through the 35 ?m thick SiC coating during the AGR-1 experiment while silver-containing intergranular precipitates were found at depths up to ~24 ?m in the SiC layer. Also, Pd-rich, nano-precipitates (~10 nm in diameter), without evidence for the presence of either Ag or U, were revealed in intragranular regions throughout the SiC layer. Because not all

    3. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

      SciTech Connect (OSTI)

      Gessert, T. A.

      2010-09-01

      Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

    4. Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction

      SciTech Connect (OSTI)

      Zide, J.M.O.; Kleiman-Shwarsctein, A.; Strandwitz, N.C.; Zimmerman, J.D.; Steenblock-Smith, T.; Gossard, A.C.; Forman, A.; Ivanovskaya, A.; Stucky, G.D.

      2006-04-17

      We report the molecular beam epitaxy growth of Al{sub 0.3}Ga{sub 0.7}As/GaAs multijunction solar cells with epitaxial, semimetallic ErAs nanoparticles at the interface of the tunnel junction. The states provided by these nanoparticles reduce the bias required to pass current through the tunnel junction by three orders of magnitude, and therefore drastically reduce the voltage losses in the tunnel junction. We have measured open-circuit voltages which are 97% of the sum of the constituent cells, which result in nearly double the efficiency of our multijunction cell with a conventional tunnel junction.

    5. Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery

      DOE Patents [OSTI]

      Hanak, Joseph J.

      1981-01-01

      A method of fabricating series-connected and tandem junction series-connected solar cells into a solar battery with laser scribing.

    6. Photocurrent spectroscopy of exciton and free particle optical transitions in suspended carbon nanotube pn-junctions

      SciTech Connect (OSTI)

      Chang, Shun-Wen; Theiss, Jesse; Hazra, Jubin; Aykol, Mehmet; Kapadia, Rehan; Cronin, Stephen B.

      2015-08-03

      We study photocurrent generation in individual, suspended carbon nanotube pn-junction diodes formed by electrostatic doping using two gate electrodes. Photocurrent spectra collected under various electrostatic doping concentrations reveal distinctive behaviors for free particle optical transitions and excitonic transitions. In particular, the photocurrent generated by excitonic transitions exhibits a strong gate doping dependence, while that of the free particle transitions is gate independent. Here, the built-in potential of the pn-junction is required to separate the strongly bound electron-hole pairs of the excitons, while free particle excitations do not require this field-assisted charge separation. We observe a sharp, well defined E{sub 11} free particle interband transition in contrast with previous photocurrent studies. Several steps are taken to ensure that the active charge separating region of these pn-junctions is suspended off the substrate in a suspended region that is substantially longer than the exciton diffusion length and, therefore, the photocurrent does not originate from a Schottky junction. We present a detailed model of the built-in fields in these pn-junctions, which, together with phonon-assistant exciton dissociation, predicts photocurrents on the same order of those observed experimentally.

    7. E-cadherin junction formation involves an active kinetic nucleation process

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng -han; Harrison, Oliver J.; Song, Hang; Smith, Adam W.; Huang, William Y. C.; Lin, Wan -Chen; Guo, Zhenhuan; Padmanabhan, Anup; et al

      2015-08-19

      Epithelial (E)-cadherin-mediated cell–cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest thatmore » the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role.« less

    8. E-cadherin junction formation involves an active kinetic nucleation process

      SciTech Connect (OSTI)

      Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng -han; Harrison, Oliver J.; Song, Hang; Smith, Adam W.; Huang, William Y. C.; Lin, Wan -Chen; Guo, Zhenhuan; Padmanabhan, Anup; Troyanovsky, Sergey M.; Dustin, Michael L.; Shapiro, Lawrence; Honig, Barry; Zaidel-Bar, Ronen; Groves, Jay T.

      2015-08-19

      Epithelial (E)-cadherin-mediated cell–cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest that the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role.

    9. Giant magnetoresistance modulated by magnetic field in graphene p-n junction

      SciTech Connect (OSTI)

      Li, Yuan; Jalil, Mansoor B. A.; Zhou, Guanghui

      2014-11-10

      We investigate the tunneling transport across a graphene p-n junction under the influence of a perpendicular magnetic field (B field). We observe a sideway deflection of the transmission profile, which can be quantitatively explained by invoking the classical Lorentz force. By considering the trajectory of the Dirac fermions along their cyclotron orbits, we analytically derive the incident angles for transmission across the graphene junction under a B field, as well as the critical magnetic field for full suppression of tunneling across the junction. These analytical predictions are consistent with the numerical results obtained via the non-equilibrium Green's function method. A stronger B-field conductance modulation is obtained for a p-n as opposed to an n-n or p-p type graphene junction. The magnetic field also induces a forbidden region of almost zero transmission for electron energy close to the Dirac point, which can be utilized to achieve a giant magnetoresistance effect. Based on our analysis, we devise an optimal magneto-electrical transport modulation, which can potentially realize a giant magnetoresistance effect in graphene p-n junction systems.

    10. Band structure of the epitaxial Fe/MgO/GaAs(001) tunnel junction studied by x-ray and ultraviolet photoelectron spectroscopies

      SciTech Connect (OSTI)

      Lu, Y.; Le Breton, J. C.; Turban, P.; Lepine, B.; Schieffer, P.; Jezequel, G.

      2006-10-09

      The electronic band structure in the epitaxial Fe/MgO/GaAs(001) tunnel junction has been studied by x-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barrier height (SBH) of Fe on MgO/GaAs heterostructure is determined to be 3.3{+-}0.1 eV, which sets the Fe Fermi level at about 0.3 eV above the GaAs valence band maximum. This SBH is also exactly the same as that measured from Fe on MgO monocrystal. After Fe deposition, no band bending change is observed in MgO and GaAs underlayers. On the contrary, Au and Al depositions led to clear variation of the band bending in both MgO and GaAs layers. This effect is analyzed as a fingerprint of defect states at the MgO/GaAs interface.

    11. Apparatus and methods for impingement cooling of an undercut region adjacent a side wall of a turbine nozzle segment

      DOE Patents [OSTI]

      Burdgick, Steven Sebastian (Schenectady, NY); Itzel, Gary Michael (Simpsonville, SC)

      2001-01-01

      A gas turbine nozzle segment has outer and inner bands. Each band includes a side wall, a cover and an impingement plate between the cover and nozzle wall defining two cavities on opposite sides of the impingement plate. Cooling steam is supplied to one cavity for flow through apertures of the impingement plate to cool the nozzle wall. The side wall of the band and inturned flange define with the nozzle wall an undercut region. The inturned flange has a plurality of apertures for directing cooling steam to cool the side wall between adjacent nozzle segments.

    12. Magnetotransport properties of spin-valve structures with Mg spacer layers

      SciTech Connect (OSTI)

      Martinez-Boubeta, C.; Ferrante, Y.; Parkin, S. S. P.

      2015-01-19

      A theoretical prediction by Wang et al. [Phys. Rev. B 82, 054405 (2010)] suggests the preferential transmission of majority-spin states with Δ{sub 1} symmetry across a magnesium interlayer in Fe/Mg/MgO/Fe based magnetic tunnel junctions. Here, we report experiments to probe this question in CoFe/Mg/CoFe structures. We find that the strength of the interlayer coupling decays exponentially with increasing the spacer thickness, however, a non-monotonic variation of the magnetoresistance as a function of the Mg layer is observed. These data may help revisit the role of the insertion of a Mg interface layer in MgO-based devices.

    13. Two-dimensional double layer in plasma in a diverging magnetic field

      SciTech Connect (OSTI)

      Saha, S. K.; Raychaudhuri, S.; Chowdhury, S.; Janaki, M. S.; Hui, A. K.

      2012-09-15

      Plasma created by an inductive RF discharge is allowed to expand along a diverging magnetic field. Measurement of the axial plasma potential profile reveals the formation of an electric double layer near the throat of the expansion chamber. An accelerated ion beam has been detected in the downstream region, confirming the presence of the double layer. The 2-D nature of the ion energy distribution function of the downstream plasma has been studied by a movable ion energy analyser, which shows that the beam radius increases along the axial distance. The 2-D structure of the plasma potential has been studied by a movable emissive probe. The existence of a secondary lobe in the contour plot of plasma equipotential is a new observation. It is also an interesting observation that the most diverging magnetic field line not intercepting the junction of the discharge tube and the expansion chamber has an electric field aligned with it.

    14. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

      SciTech Connect (OSTI)

      Werner, R.; Kleiner, R.; Koelle, D.; Petrov, A. Yu.; Davidson, B. A.; Mino, L. Alvarez

      2011-04-18

      We report resistance versus magnetic field measurements for a La{sub 0.65}Sr{sub 0.35}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.65}Sr{sub 0.35}MnO{sub 3} tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches {approx}1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

    15. UMTRA Project water sampling and analysis plan, Grand Junction, Colorado. Revision 1, Version 6

      SciTech Connect (OSTI)

      1995-09-01

      This water sampling and analysis plan describes the planned, routine ground water sampling activities at the Grand Junction US DOE Uranium Mill Tailings Remedial Action (UMTRA) Project site (GRJ-01) in Grand Junction, Colorado, and at the Cheney Disposal Site (GRJ-03) near Grand Junction. The plan identifies and justifies the sampling locations, analytical parameters, detection limits, and sampling frequencies for the routine monitoring stations at the sites. Regulatory basis is in the US EPA regulations in 40 CFR Part 192 (1994) and EPA ground water quality standards of 1995 (60 FR 2854). This plan summarizes results of past water sampling activities, details water sampling activities planned for the next 2 years, and projects sampling activities for the next 5 years.

    16. A versatile optical junction using photonic band-gap guidance and self collimation

      SciTech Connect (OSTI)

      Gupta, Man Mohan; Medhekar, Sarang

      2014-09-29

      We show that it is possible to design two photonic crystal (PC) structures such that an optical beam of desired wavelength gets guided within the line defect of the first structure (photonic band gap guidance) and the same beam gets guided in the second structure by self-collimation. Using two dimensional simulation of a design made of the combination of these two structures, we propose an optical junction that allows for crossing of two optical signals of same wavelength and same polarization with very low crosstalk. Moreover, the junction can be operated at number of frequencies in a wide range. Crossing of multiple beams with very low cross talk is also possible. The proposed junction should be important in future integrated photonic circuits.

    17. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

      SciTech Connect (OSTI)

      Vinokurov, D. A.; Ladugin, M. A.; Lyutetskii, A. V.; Marmalyuk, A. A.; Petrunov, A. N.; Pikhtin, N. A.; Slipchenko, S. O. Sokolova, Z. N.; Stankevich, A. L.; Fetisova, N. V.; Shashkin, I. S.; Averkiev, N. S.; Tarasov, I. S.

      2010-06-15

      Epitaxially stacked tunnel-junction laser hetero structures were grown by hydride metalorganic vapor-phase epitaxy in the system of AlGaAs/GaAs/In GaAs alloys. Based on such structures, mesa stripe lasers with an aperture of 150 s- 7 m were fabricated. The possibility of controlling the lasing wavelength by varying the active region thickness in each tunnel-junction laser structure was demonstrated. Independent two-band lasing at wavelengths of 914 and 925 nm (the difference frequency is 2.3 THz) was achieved at a maximum optical radiation power of 20 W in each band of the epitaxially stacked tunnel-junction semiconductor laser.

    18. Sputtered a-silicon tunneling barriers for Nb-Nb Josephson junctions

      SciTech Connect (OSTI)

      Smith, L.N.; Jillie, D.W.; Kroger, H.; Thaxter, J.B.

      1982-11-01

      The authors have developed an IC-compatible process for fabricating Josephson tunnel junctions, which uses dc magnetron-sputtered Nb films as both base and counterelectrodes, and rf-sputtered amorphous silicon as the tunneling barrier. Optical reflectivity measurements have been used to study the silicon barrier, and to allow precise determination of the barrier thickness. The Josephson current density varies exponentially -over several orders of magnitude -- with the barrier thickness. The product of the critical current and subgap resistance V /SUB m/ is constant over this wide range of current density. The specific capacitance of these junctions is about 2.5 ..mu..f/cm/sup 2/ at a current density of a few hundred A/cm/sup 2/. This is lower than the value for lead-alloy junctions, about 4.3 ..mu..f/cm/sup 2/, and is consistent with the measured thickness and dielectric constant of the a-Si barrier.

    19. Fabrication of Emissible Metallic Layer-by-Layer Photonic Crystals...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      polymer is coated on the first polymer. A substrate or a multi-layer polymer structure is placed on the filled mold and the resulting structure is exposed to UV light (i.e., is UV...

    20. D0 layer 0 innermost layer of silicon microstrip tracker

      SciTech Connect (OSTI)

      Hanagaki, K.; /Fermilab

      2006-01-01

      A new inner layer silicon strip detector has been built and will be installed in the existing silicon microstrip tracker in D0. They report on the motivation, design, and performance of this new detector.

    1. Fire characterization and object thermal response for a large flat plate adjacent to a large JP-4 fuel fire

      SciTech Connect (OSTI)

      Gritzo, L.A.; Moya, J.L.; Murray, D.

      1997-01-01

      A series of three 18.9 m diameter JP-4 pool fire experiments with a large (2.1 m X 4.6 m), flat plate calorimeter adjacent to the fuel pool were recently performed. The objectives of these experiments were to: (1) gain a better understanding of fire phenomenology, (2) provide empirical input parameter estimates for simplified, deterministic Risk Assessment Compatible Fire Models (RACFMs), (3) assist in continuing fire field model code validation and development, and (4) enhance the data base of fire temperature and heat flux to object distributions. Due to different wind conditions during each experiment, data were obtained for conditions where the plate was not engulfed, fully-engulfed and partially engulfed by the continuous flame zone. Results include the heat flux distribution to the plate and flame thermocouple temperatures in the vicinity of the plate and at two cross sections within the lower region of the continuous flame zone. The results emphasize the importance of radiative coupling (i.e. the cooling of the flames by a thermally massive object) and convective coupling (including object-induced turbulence and object/wind/flame interactions) in determining the heat flux from a fire to an object. The formation of a secondary flame zone on an object adjacent to a fire via convective coupling (which increases the heat flux by a factor of two) is shown to be possible when the object is located within a distance equal to the object width from the fire.

    2. Multijunction photovoltaic device and fabrication method

      DOE Patents [OSTI]

      Arya, Rajeewa R.; Catalano, Anthony W.

      1993-09-21

      A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

    3. US Department of Energy Grand Junction Projects Office Remedial Action Project, final report of the decontamination and decommissioning of Building 36 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Widdop, M.R.

      1996-08-01

      The U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJPO Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, also is the remedial action contractor. Building 36 was found to be radiologically contaminated and was demolished in 1996. The soil beneath the building was remediated in accordance with identified standards and can be released for unlimited exposure and unrestricted use. This document was prepared in response to a DOE request for an individual final report for each contaminated GJPO building.

    4. NREL, CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell

      SciTech Connect (OSTI)

      2016-01-01

      Scientists set a new world record for converting non-concentrated sunlight into electricity using a dual-junction III-V/Si solar cell. National Renewable Energy Laboratory (NREL) and Swiss Center for Electronics and Microtechnology (CSEM) scientists have collaborated to create a novel tandem solar cell that operates at 29.8% conversion efficiency under non-concentrator (1-sun) conditions. In comparison, the 1-sun efficiency of a silicon (Si) single-junction solar cell is probably still a few years away from converging on its practical limit of about 26%.

    5. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

      DOE Patents [OSTI]

      Wanlass, M.W.

      1994-12-27

      A single-junction solar cell is described having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of ''pinning'' the optimum band gap for a wide range of operating conditions at a value of 1.14[+-]0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap. 7 figures.

    6. Light-splitting photovoltaic system utilizing two dual-junction solar cells

      SciTech Connect (OSTI)

      Xiong, Kanglin; Yang, Hui; Lu, Shulong; Dong, Jianrong; Zhou, Taofei; Wang, Rongxin; Jiang, Desheng

      2010-12-15

      There are many difficulties limiting the further development of monolithic multi-junction solar cells, such as the growth of lattice-mismatched material and the current matching constraint. As an alternative approach, the light-splitting photovoltaic system is investigated intensively in different aspects, including the energy loss mechanism and the choice of energy bandgaps of solar cells. Based on the investigation, a two-dual junction system has been implemented employing lattice-matched GaInP/GaAs and InGaAsP/InGaAs cells grown epitaxially on GaAs and InP substrates, respectively. (author)

    7. Evaluation of power production from the solar electric generating systems at Kramer Junction: 1988 to 1993

      SciTech Connect (OSTI)

      Kolb, G.J.

      1994-12-31

      The five Solar Electric Generating Systems (SEGS) at Kramer Junction, California, now have nearly 30 years of cumulative operating experience. These 30 MW plants employ parabolic trough technology originally deployed by LUZ International in the late 1980`s and are now managed, operated and maintained by the Kramer Junction Company. In this paper, Sandia National Laboratories performed an analysis of the annual energy production from the five plants. Annual solar-to-electric conversion efficiencies are calculated and the major factors that influenced the results are presented. The generally good efficiencies are primarily attributed to the excellent equipment availabilities achieved at all plants.

    8. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

      SciTech Connect (OSTI)

      Yap, Yoke Khin

      2013-03-14

      Hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) are expected to have appealing new properties that are not available from pure BNNTs and CNTs. Theoretical studies indicate that BNNT/CNT junctions could be multifunctional and applicable as memory, spintronic, electronic, and photonics devices with tunable band structures. This will lead to energy and material efficient multifunctional devices that will be beneficial to the society. However, experimental realization of BNNT/CNT junctions was hindered by the absent of a common growth technique for BNNTs and CNTs. In fact, the synthesis of BNNTs was very challenging and may involve high temperatures (up to 3000 degree Celsius by laser ablation) and explosive chemicals. During the award period, we have successfully developed a simple chemical vapor deposition (CVD) technique to grow BNNTs at 1100-1200 degree Celsius without using dangerous chemicals. A series of common catalyst have then been identified for the synthesis of BNNTs and CNTs. Both of these breakthroughs have led to our preliminary success in growing two types of BNNT/CNT junctions and two additional new nanostructures: 1) branching BNNT/CNT junctions and 2) co-axial BNNT/CNT junctions, 3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNT/graphene junctions. We have started to understand their structural, compositional, and electronic properties. Latest results indicate that the branching BNNT/CNT junctions and QDs-BNNTs are functional as room-temperature tunneling devices. We have submitted the application of a renewal grant to continue the study of these new energy efficient materials. Finally, this project has also strengthened our collaborations with multiple Department of Energy’s Nanoscale Science Research Centers (NSRCs), including the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory, and the Center for Integrated Nanotechnologies (CINTs) at Sandia National Laboratories

    9. McMillan-Rowell Like Oscillations in a Superconductor-InAs/GaSb-Superconductor Junction

      SciTech Connect (OSTI)

      Shi, Xiaoyan; Yu, Wenlong; Hawkins, Samuel D.; Klem, John F.; Pan, Wei

      2015-08-04

      We fabricated a superconductor (Ta)-InAs/GaSb bilayer-superconductor (Ta) junction device that has a long mean free path and can preserve the wavelike properties of particles (electrons and holes) inside the junction. Differential conductance measurements were also carried out at low temperatures in this device, and McMillan-Rowell like oscillations (MROs) were observed. A much larger Fermi velocity, compared to that from Shubnikov-de Haas oscillations, was obtained from the frequency of MROs. Possible mechanisms are discussed for this discrepancy.

    10. Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

      SciTech Connect (OSTI)

      Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

      2012-06-01

      We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. We found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several μm were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.

    11. Boundary Layer Cloud Turbulence Characteristics

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      Boundary Layer Cloud Turbulence Characteristics Virendra Ghate Bruce Albrecht Parameter Observational Readiness (/10) Modeling Need (/10) Cloud Boundaries 9 9 Cloud Fraction Variance Skewness Up/Downdraft coverage Dominant Freq. signal Dissipation rate ??? Observation-Modeling Interface

    12. Distribution of Pd, Ag & U in the SiC Layer of an Irradiated TRISO Fuel Particle

      SciTech Connect (OSTI)

      Thomas M. Lillo; Isabella J. van Rooyen

      2014-08-01

      The distribution of silver, uranium and palladium in the silicon carbide (SiC) layer of an irradiated TRISO fuel particle was studied using samples extracted from the SiC layer using focused ion beam (FIB) techniques. Transmission electron microscopy in conjunction with energy dispersive x-ray spectroscopy was used to identify the presence of the specific elements of interest at grain boundaries, triple junctions and precipitates in the interior of SiC grains. Details on sample fabrication, errors associated with measurements of elemental migration distances and the distances migrated by silver, palladium and uranium in the SiC layer of an irradiated TRISO particle from the AGR-1 program are reported.

    13. Intermetallic Layers in Soldered Joints

      Energy Science and Technology Software Center (OSTI)

      1998-12-10

      ILAG solves the one-dimensional partial differential equations describing the multiphase, multicomponent, solid-state diffusion-controlled growth of intermetallic layers in soldered joints. This software provides an analysis capability for materials researchers to examine intermetallic growth mechanisms in a wide variety of defense and commercial applications involving both traditional and advanced materials. ILAG calculates the interface positions of the layers, as well as the spatial distribution of constituent mass fractions, and outputs the results at user-prescribed simulation times.

    14. Nano-superconducting quantum interference devices with suspended junctions

      SciTech Connect (OSTI)

      Hazra, D.; Hasselbach, K.; Kirtley, J. R.

      2014-04-14

      Nano-Superconducting Quantum Interference Devices (nano-SQUIDs) are usually fabricated from a single layer of either Nb or Al. We describe here a simple method for fabricating suspended nano-bridges in Nb/Al thin-film bilayers. We use these suspended bridges, which act as Josephson weak links, to fabricate nano-SQUIDs which show critical current oscillations at temperatures up to 1.5?K and magnetic flux densities up to over 20?mT. These nano-SQUIDs exhibit flux modulation depths intermediate between all-Al and all-Nb devices, with some of the desirable characteristics of both. The suspended geometry is attractive for magnetic single nanoparticle measurements.

    15. In situ Formation of Highly Conducting Covalent Au-C Contacts for Single-Molecule Junctions

      SciTech Connect (OSTI)

      Cheng, Z.L.; Hybertsen, M.; Skouta, R.; Vazquez, H.; Widawsky, J.R.; Schneebeli, S.; Chen, W.; Breslow, R.; Venkataraman, L.

      2011-06-01

      Charge transport across metal-molecule interfaces has an important role in organic electronics. Typically, chemical link groups such as thiols or amines are used to bind organic molecules to metal electrodes in single-molecule circuits, with these groups controlling both the physical structure and the electronic coupling at the interface. Direct metal-carbon coupling has been shown through C60, benzene and {pi}-stacked benzene but ideally the carbon backbone of the molecule should be covalently bonded to the electrode without intervening link groups. Here, we demonstrate a method to create junctions with such contacts. Trimethyl tin (SnMe{sub 3})-terminated polymethylene chains are used to form single-molecule junctions with a break-junction technique. Gold atoms at the electrode displace the SnMe{sub 3} linkers, leading to the formation of direct Au-C bonded single-molecule junctions with a conductance that is {approx}100 times larger than analogous alkanes with most other terminations. The conductance of these Au-C bonded alkanes decreases exponentially with molecular length, with a decay constant of 0.97 per methylene, consistent with a non-resonant transport mechanism. Control experiments and ab initio calculations show that high conductances are achieved because a covalent Au-C sigma ({sigma}) bond is formed. This offers a new method for making reproducible and highly conducting metal-organic contacts.

    16. Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint

      SciTech Connect (OSTI)

      Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q.; Branz, H. M.; Meier, D. L.

      2008-05-01

      We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer.

    17. Tuning electron transport through a single molecular junction by bridge modification

      SciTech Connect (OSTI)

      Li, Xiao-Fei Qiu, Qi; Luo, Yi

      2014-07-07

      The possibility of controlling electron transport in a single molecular junction represents the ultimate goal of molecular electronics. Here, we report that the modification of bridging group makes it possible to improve the performance and obtain new functions in a single cross-conjugated molecular junction, designed from a recently synthesized bipolar molecule bithiophene naphthalene diimide. Our first principles results show that the bipolar characteristic remains after the molecule was modified and sandwiched between two metal electrodes. Rectifying is the intrinsic characteristic of the molecular junction and its performance can be enhanced by replacing the saturated bridging group with an unsaturated group. A further improvement of the rectifying and a robust negative differential resistance (NDR) behavior can be achieved by the modification of unsaturated bridge. It is revealed that the modification can induce a deviation angle about 4° between the donor and the acceptor π-conjugations, making it possible to enhance the communication between the two π systems. Meanwhile, the low energy frontier orbitals of the junction can move close to the Fermi level and encounter in energy at certain biases, thus a transport channel with a considerable transmission can be formed near the Fermi level only at a narrow bias regime, resulting in the improvement of rectifying and the robust NDR behavior. This finding could be useful for the design of single molecular devices.

    18. Rapid, Enhanced IV Characterization of Multi-Junction PV Devices under One Sun at NREL

      SciTech Connect (OSTI)

      Moriarty, Tom; France, Ryan; Steiner, Myles

      2015-06-14

      Multi-junction technology is rapidly advancing, which puts increasing demands on IV characterization resources. We report on a tool and procedure for fast turn-around of IV data under the reference conditions, but also under controlled variations from the reference conditions. This enhanced data set can improve further iterations of device optimization.

    19. Rapid, Enhanced IV Characterization of Multi-Junction PV Devices under One Sun at NREL: Preprint

      SciTech Connect (OSTI)

      Moriarty, Tom; France, Ryan; Steiner, Myles

      2015-09-15

      Multi-junction technology is rapidly advancing, which puts increasing demands on IV characterization resources. We report on a tool and procedure for fast turn-around of IV data under the reference conditions, but also under controlled variations from the reference conditions. This enhanced data set can improve further iterations of device optimization.

    20. Site observational work plan for the UMTRA Project Site at Grand Junction, Colorado

      SciTech Connect (OSTI)

      1996-03-01

      The U.S. Department of Energy (DOE) has prepared this initial site observational work plan (SOWP) for the Uranium Mill Tailings Remedial Action (UMTRA) Project site in Grand Junction, Colorado. This SOWP is one of the first UMTRA Ground Water Project documents developed to select a compliance strategy that meets the UMTRA ground water standards (40 CFR Part 192, as amended by 60 FR 2854) for the Grand Junction site. This SOWP applies information about the Grand Junction site to the compliance strategy selection framework developed in the UMTRA Ground Water Project draft programmatic environmental impact statement (PEIS). This risk-based, decision-making framework identifies the decision logic for selecting compliance strategies that could be used to meet the ground water standards. The DOE goal is to use the observational method to implement a cost-effective site strategy that complies with the ground water standards and protects human health and the environment. Based on an evaluation of the site characterization and risk assessment data available for the preparation of this SOWP, DOE proposes that the most likely compliance strategy for the Grand Junction site is no remediation based on the application of supplemental standards. This proposed strategy is based on a conceptual site model that indicates site-related contamination is confined to a limited-use aquifer as defined in the ground water standards.

    1. Imaging the Solar Cell P-N Junction and Depletion Region Using Secondary Electron Contrast

      SciTech Connect (OSTI)

      Heath, J. T.; Jiang, C. S.; Al-Jassim, M. M.

      2011-01-01

      We report on secondary electron (SE) images of cross-sectioned multicrystalline Si and GaAs/GaInP solar cell devices, focusing on quantifying the relationship between the apparent n{sup +}-p contrast and characteristic electronic features of the device. These samples allow us to compare the SE signal from devices which have very different physical characteristics: differing materials, diffused junction versus abrupt junction, heterojunction versus homojunction. Despite these differences, we find that the SE image contrast for both types of sample, and as a function of reverse bias across the diode, closely agrees with PC1D simulations of the bulk electrostatic potential in the device, accurately yielding the depletion edge and width. A spatial derivative of the SE data shows a local maximum at the metallurgical junction. Such data are valuable, for example, in studying the conformity of a diffused junction to the textured surface topography. These data also extend our understanding of the origin of the SE contrast.

    2. Superconductive tunnel junction device with enhanced characteristics and method of manufacture

      SciTech Connect (OSTI)

      Kroger, H.; Jillie, D. W.

      1985-08-20

      A superconductive tunnel junction device comprises first and second superconductive electrodes with a barrier disposed therebetween where the first superconductive electrode and the barrier are formed without interruption in the same vacuum system pump down and with the first superconductive electrode subjected to sputter etching in an argon plasma before the deposition of the barrier for improving the characteristics of the device.

    3. The importance of Fe surface states for spintronic devices based on magnetic tunnel junctions

      SciTech Connect (OSTI)

      Chantis, Athanasios N

      2008-01-01

      In this article we give a review of our recent theoretical studies of the influence of Fe(001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs(001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.

    4. Connecting Three Atomic Layers Puts Semiconducting Science on...

      Office of Science (SC) Website

      the linear junction region along the triangular interface produces enhanced light emission (red region). The Science A new semiconducting material that is only three atomic...

    5. Electrical and photovoltaic characteristics of MoS{sub 2}/Si p-n junctions

      SciTech Connect (OSTI)

      Hao, Lanzhong Liu, Yunjie Gao, Wei; Han, Zhide; Xue, Qingzhong; Zeng, Huizhong; Wu, Zhipeng; Zhu, Jun; Zhang, Wanli

      2015-03-21

      Bulk-like molybdenum disulfide (MoS{sub 2}) thin films were deposited on the surface of p-type Si substrates using dc magnetron sputtering technique and MoS{sub 2}/Si p-n junctions were formed. The vibrating modes of E{sup 1}{sub 2g} and A{sub 1g} were observed from the Raman spectrum of the MoS{sub 2} films. The current density versus voltage (J-V) characteristics of the junction were investigated. A typical J-V rectifying effect with a turn-on voltage of 0.2 V was shown. In different voltage range, the electrical transporting of the junction was dominated by diffusion current and recombination current, respectively. Under the light illumination of 15 mW cm{sup −2}, the p-n junction exhibited obvious photovoltaic characteristics with a short-circuit current density of 3.2 mA cm{sup −2} and open-circuit voltage of 0.14 V. The fill factor and energy conversion efficiency were 42.4% and 1.3%, respectively. According to the determination of the Fermi-energy level (∼4.65 eV) and energy-band gap (∼1.45 eV) of the MoS{sub 2} films by capacitance-voltage curve and ultraviolet-visible transmission spectra, the mechanisms of the electrical and photovoltaic characteristics were discussed in terms of the energy-band structure of the MoS{sub 2}/Si p-n junctions. The results hold the promise for the integration of MoS{sub 2} thin films with commercially available Si-based electronics in high-efficient photovoltaic devices.

    6. Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films

      SciTech Connect (OSTI)

      Mann, Harkirat S.; Lang, Brian N.; Schwab, Yosyp; Scarel, Giovanna; Niemelä, Janne-Petteri; Karppinen, Maarit

      2015-01-15

      Infrared radiation is used to radiatively transfer heat to a nanometric power generator (NPG) device with a thermoelectric Nb-doped TiO{sub 2} film deposited by atomic layer deposition (ALD) as the active element, onto a borosilicate glass substrate. The linear rise of the produced voltage with respect to the temperature difference between the “hot” and “cold” junctions, typical of the Seebeck effect, is missing. The discovery of the violation of the Seebeck effect in NPG devices combined with the ability of ALD to tune thermoelectric thin film properties could be exploited to increase the efficiency of these devices for energy harvesting purposes.

    7. Amorphous silicon passivated contacts for diffused junction silicon solar cells

      SciTech Connect (OSTI)

      Bullock, J. Yan, D.; Wan, Y.; Cuevas, A.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

      2014-04-28

      Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopyenergy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

    8. TH-C-BRD-12: Robust Intensity Modulated Proton Therapy Plan Can Eliminate Junction Shifts for Craniospinal Irradiation

      SciTech Connect (OSTI)

      Liao, L; Jiang, S; Li, Y; Wang, X; Li, H; Zhu, X; Sahoo, N; Gillin, M; Mahajan, A; Grosshans, D; Zhang, X; Lim, G

      2014-06-15

      Purpose: The passive scattering proton therapy (PSPT) technique is the commonly used radiotherapy technique for craniospinal irradiation (CSI). However, PSPT involves many numbers of junction shifts applied over the course of treatment to reduce the cold and hot regions caused by field mismatching. In this work, we introduced a robust planning approach to develop an optimal and clinical efficient techniques for CSI using intensity modulated proton therapy (IMPT) so that junction shifts can essentially be eliminated. Methods: The intra-fractional uncertainty, in which two overlapping fields shift in the opposite directions along the craniospinal axis, are incorporated into the robust optimization algorithm. Treatment plans with junction sizes 3,5,10,15,20,25 cm were designed and compared with the plan designed using the non-robust optimization. Robustness of the plans were evaluated based on dose profiles along the craniospinal axis for the plans applying 3 mm intra-fractional shift. The dose intra-fraction variations (DIV) at the junction are used to evaluate the robustness of the plans. Results: The DIVs are 7.9%, 6.3%, 5.0%, 3.8%, 2.8% and 2.2%, for the robustly optimized plans with junction sizes 3,5,10,15,20,25 cm. The DIV are 10% for the non-robustly optimized plans with junction size 25 cm. The dose profiles along the craniospinal axis exhibit gradual and tapered dose distribution. Using DIVs less than 5% as maximum acceptable intrafractional variation, the overlapping region can be reduced to 10 cm, leading to potential reduced number of the fields. The DIVs are less than 5% for 5 mm intra-fractional shifts with junction size 25 cm, leading to potential no-junction-shift for CSI using IMPT. Conclusion: This work is the first report of the robust optimization on CSI based on IMPT. We demonstrate that robust optimization can lead to much efficient carniospinal irradiation by eliminating the junction shifts.

    9. High Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology, Final Technical Report, 6 March 1998 - 15 October 2001

      SciTech Connect (OSTI)

      Guha, S.

      2001-11-08

      This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and high reliability. United Solar uses a spectrum-splitting, triple-junction cell structure. The top cell uses an amorphous silicon alloy of {approx}1.8-eV bandgap to absorb blue photons. The middle cell uses an amorphous silicon germanium alloy ({approx}20% germanium) of {approx}1.6-eV bandgap to capture green photons. The bottom cell has {approx}40% germanium to reduce the bandgap to {approx}1.4-eV to capture red photons. The cells are deposited on a stainless-steel substrate with a predeposited silver/zinc oxide back reflector to facilitate light-trapping. A thin layer of antireflection coating is applied to the top of the cell to reduce reflection loss. The major research activities conducted under this program were: (1) Fundamental studies to improve our understanding of materials and devices; the work included developing and analyzing a-Si alloy and a-SiGe alloy materials prepared near the threshold of amorphous-to-microcrystalline transition and studying solar cells fabricated using these materials. (2) Deposition of small-area cells using a radio-frequency technique to obtain higher deposition rates. (3) Deposition of small-area cells using a modified very high frequency technique to obtain higher deposition rates. (4) Large-area cell research to obtain the highest module efficiency. (5) Optimization of solar cells and modules fabricated using production parameters in a large-area reactor.

    10. Doped LZO buffer layers for laminated conductors

      DOE Patents [OSTI]

      Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

      2010-03-23

      A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

    11. Lubricant-infused nanoparticulate coatings assembled by layer...

      Office of Scientific and Technical Information (OSTI)

      Lubricant-infused nanoparticulate coatings assembled by layer-by-layer deposition Title: Lubricant-infused nanoparticulate coatings assembled by layer-by-layer deposition ...

    12. Phreatic flow on sloping soil layers from a finite source: An analytical solution

      SciTech Connect (OSTI)

      Filley, T.H.

      1991-09-01

      Sloping clay layers beneath percolation ponds can cause infiltrating wastewater to pond and move in directions not predicted by vertical infiltration equations. This report presents a method for estimating the potential of wastewater from percolation sumps located over sloping clay layers to interact with nearby groundwater resources. The analytical solution developed is for steady-state conditions and includes a procedure to estimate the time needed to reach steady state. The fundamental assumption used in the mathematical development requires that elevation-head gradients be much larger than pressure-head gradients. A method for testing the validity of this assumption is also included. An example calculation was performed for percolation sumps on the Naval Petroleum Reserve No. 1 in Elk Hills, California. That analysis showed that, under the assumptions used, the sumps may have enabled oil field wastewater to reach groundwater resources within the adjacent San Joaquin Valley. 9 refs., 10 figs.

    13. Deep crustal sediment study: Widespread precambrian layered rocks (sedimentary ?) beneath the US midcontinent

      SciTech Connect (OSTI)

      Hauser, E.C. [Cornell Univ., Ithaca, NY (United States)

      1992-05-01

      A thick sequence of layered rocks occurs beneath the Phanerozoic platform strata which blanket the U.S. midcontinent. Observed on COCORP deep reflection data in southern Illinois and Indiana and in SW Oklahoma and adjacent Texas, this sequence is locally 1-3 times as thick as the overlying Paleozoic cover, but the origin of this sequence, its ultimate lateral extent, and resource potential are unknown. The objective of this project is to seek and reprocess seismic reflection data provided by industry from the U.S. midcontinent, and together with the COCORP deep reflection data and information from the scattered basement-penetrating drill holes, to begin to constrain the distribution, origin and evolution of this enigmatic layered sequence, particularly to evaluate if sedimentary material may be an important constituent (i.e., deep gas potential).

    14. Deep crustal sediment study: Widespread Precambrian layered rocks (Sedimentary ) beneath the US midcontinent

      SciTech Connect (OSTI)

      Hauser, E.C.

      1992-01-01

      A thick sequence of layered rocks occurs beneath the Phanerozoic platform strata which blanket the US midcontinent. Observed on COCORP deep reflection data in southern Illinois and Indiana and in SW Oklahoma and adjacent Texas, this sequence is locally 1--3 times as thick as the overlying Paleozoic cover, but the origin of this sequence, its ultimate lateral extent, and resource potential are unknown. The objective of this project is to seek and reprocess seismic reflection data provided by industry from the US midcontinent and together with the COCORP deep reflection data and information from the scattered basement-penetrating drill holes, to begin to constrain the distribution, origin and evolution of this enigmatic layered sequence, particularly to evaluate if sedimentary material may be an important constituent (i.e., deep gas potential).

    15. Deep crustal sediment study: Widespread Precambrian layered rocks (Sedimentary ?) beneath the US midcontinent

      SciTech Connect (OSTI)

      Hauser, E.C.

      1992-06-01

      A thick sequence of layered rocks occurs beneath the Phanerozoic platform strata which blanket the US midcontinent. Observed on COCORP deep reflection data in southern Illinois and Indiana and in SW Oklahoma and adjacent Texas, this sequence is locally 1--3 times as thick as the overlying Paleozoic cover, but the origin of this sequence, its ultimate lateral extent, and resource potential are unknown. The objective of this project is to seek and reprocess seismic reflection data provided by industry from the US midcontinent and together with the COCORP deep reflection data and information from the scattered basement-penetrating drill holes, to begin to constrain the distribution, origin and evolution of this enigmatic layered sequence, particularly to evaluate if sedimentary material may be an important constituent (i.e., deep gas potential).

    16. Determining resistivity of a formation adjacent to a borehole having casing using multiple electrodes and with resistances being defined between the electrodes

      DOE Patents [OSTI]

      Vail, W.B. III

      1996-10-29

      Methods of operation are disclosed for different types of multiple electrode apparatus vertically disposed in a cased well to measure information related to the resistivity of adjacent geological formations from inside the cased well. The multiple electrode apparatus have a minimum of three spaced-apart voltage measurement electrodes that electrically engage the interior of the cased well. Measurement information is obtained related to current which is caused to flow from the cased well into the adjacent geological formation. First compensation information is obtained related to a first casing resistance between a first pair of the spaced-apart voltage measurement electrodes. Second compensation information is obtained related to a second casing resistance between a second pair of the spaced-apart voltage measurement electrodes. The measurement information, and first and second compensation information are used to determine a magnitude related to the adjacent formation resistivity. 13 figs.

    17. Organic photovoltaic cells utilizing ultrathin sensitizing layer

      DOE Patents [OSTI]

      Rand, Barry P.; Forrest, Stephen R.

      2011-05-24

      A photosensitive device includes a series of organic photoactive layers disposed between two electrodes. Each layer in the series is in direct contact with a next layer in the series. The series is arranged to form at least one donor-acceptor heterojunction, and includes a first organic photoactive layer comprising a first host material serving as a donor, a thin second organic photoactive layer comprising a second host material disposed between the first and a third organic photoactive layer, and the third organic photoactive layer comprising a third host material serving as an acceptor. The first, second, and third host materials are different. The thin second layer serves as an acceptor relative to the first layer or as a donor relative to the third layer.

    18. Buffer layer for thin film structures

      DOE Patents [OSTI]

      Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

      2006-10-31

      A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

    19. Buffer layer for thin film structures

      DOE Patents [OSTI]

      Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

      2010-06-15

      A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

    20. Chemical solution seed layer for rabits tapes

      DOE Patents [OSTI]

      Goyal, Amit; Paranthaman, Mariappan; Wee, Sung-Hun

      2014-06-10

      A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.

    1. Reduction of COD in leachate from a hazardous waste landfill adjacent to a coke-making facility

      SciTech Connect (OSTI)

      Banerjee, K.; O`Toole, T.J.

      1995-12-01

      A hazardous waste landfill adjacent to a coke manufacturing facility was in operation between July 1990 and December 1991. A system was constructed to collect and treat the leachate from the landfill prior to discharge to the river. Occasionally, the discharge from the treatment facility exceeded the permit limitations for Chemical Oxygen Demand (COD), Biochemical Oxygen Demand (BOD), and Total Organic Carbon (TOC). The objectives of this study were to determine treatment methods which would enable compliance with the applicable discharge limits; to establish the desired operating conditions of the process; and to investigate the effect of various parameters such as pH, catalyst dosage, and reaction time on the COD destruction efficiency. The characteristics of the landfill leachate in question were significantly variable in terms of chemical composition. A review of the influent quality data suggests that the COD concentration ranges between 80 and 390 mg/l. The oxidation processes using Fenton`s reagent or a combination of UV/hydrogen peroxide/catalyst are capable of reducing the COD concentration of the leachate below the discharge limitation of 35 mg/l. The estimated capital cost associated with the Fenton`s reagent process is approximately $525,000, and the annual operating and maintenance cost is $560,000. The estimated capital cost for the UV/hydrogen peroxide/catalyst treatment system is $565,000. The annual operating and maintenance cost of this process would be approximately $430,000.

    2. Superconducting electromechanical rotating device having a liquid-cooled, potted, one layer stator winding

      DOE Patents [OSTI]

      Dombrovski, Viatcheslav V.; Driscoll, David I.; Shovkhet, Boris A.

      2001-01-01

      A superconducting electromechanical rotating (SER) device, such as a synchronous AC motor, includes a superconducting field winding and a one-layer stator winding that may be water-cooled. The stator winding is potted to a support such as the inner radial surface of a support structure and, accordingly, lacks hangers or other mechanical fasteners that otherwise would complicate stator assembly and require the provision of an unnecessarily large gap between adjacent stator coil sections. The one-layer winding topology, resulting in the number of coils being equal to half the number of slots or other mounting locations on the support structure, allows one to minimize or eliminate the gap between the inner radial ends of adjacent straight sections of the stator coilswhile maintaining the gap between the coil knuckles equal to at least the coil width, providing sufficient room for electrical and cooling element configurations and connections. The stator winding may be potted to the support structure or other support, for example, by a one-step VPI process relying on saturation of an absorbent material to fill large gaps in the stator winding or by a two-step process in which small gaps are first filled via a VPI or similar operation and larger gaps are then filled via an operation that utilizes the stator as a portion of an on-site mold.

    3. Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n{sup +}-Si junctions

      SciTech Connect (OSTI)

      Saito, Y. Ishikawa, M.; Sugiyama, H.; Inokuchi, T.; Hamaya, K.; Tezuka, N.

      2015-05-07

      Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - t{sub MgO} plot (RA: resistance area product, t{sub MgO}: thickness of MgO tunnel barrier) in CoFe/MgO/n{sup +}-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization (P{sub Si}) in Si. The estimated absolute values of P{sub Si} using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. To demonstrate large spin accumulation in Si bulk band and enhance the local-MR through Si channel, these results indicate that the increase of the effective barrier height at ferromagnet/(tunnel barrier)/n{sup +}-Si junction electrode is important.

    4. US Department of Energy Grand Junction Projects Office Remedial Action Project. Final report of the decontamination and decommissioning of Building 52 at the Grand Junction Projects Office Facility

      SciTech Connect (OSTI)

      Krabacher, J.E.

      1996-08-01

      The U.S. Department of Energy (DOE) Grand Junction Projects Office (GJPO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore and mill tailings during uranium refining activities of the Manhattan Engineer District and during pilot milling experiments conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJPO Remedial Action Project to clean up and restore the facility lands, improvements, and the underlying aquifer. The site contractor for the facility, Rust Geotech, also was the remedial action contractor. Building 52 was found to be radiologically contaminated and was demolished in 1994. The soil area within the footprint of the building has been remediated in accordance with the identified standards and the area can be released for unlimited exposure and unrestricted use. This document was prepared in response to a DOE request for an individual final report for each contaminated GJPO building.

    5. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

      SciTech Connect (OSTI)

      Manipatruni, Sasikanth Nikonov, Dmitri E.; Young, Ian A.

      2014-05-07

      Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects.

    6. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

      SciTech Connect (OSTI)

      Dhungana, Kamal B.; Pati, Ranjit

      2014-04-21

      Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy.

    7. Multiple junction cell characterization using the LBIC method : early results, issues, and pathways to improvement.

      SciTech Connect (OSTI)

      Finn, Jason R.; Granata, Jennifer E.; Hansen, Barry R.

      2010-03-01

      A light beam induced current (LBIC) measurement is a non-destructive technique that produces a spatial graphical representation of current response in photovoltaic cells with respect to position when stimulated by a light beam. Generally, a laser beam is used for these measurements because the spot size can be made very small, on the order of microns, and very precise measurements can be made. Sandia National Laboratories Photovoltaic System Evaluation Laboratory (PSEL) uses its LBIC measurement technique to characterize single junction mono-crystalline and multi-crystalline solar cells ranging from miniature to conventional sizes. Sandia has modified the already valuable LBIC technique to enable multi-junction PV cells to be characterized.

    8. Assessing thermal damage in silicon PN-junctions using Raman thermometry

      SciTech Connect (OSTI)

      Beechem, Thomas E.; Serrano, Justin R.; McDonald, Anthony; Mani, Seethambal

      2013-03-28

      Laser machining is frequently utilized in the manufacture of photovoltaics. A natural by-product of these fabrication processes, heat, not only serves as a means of material removal but also modifies the material in an extended region beyond that ideally intended for alteration. This modified region, termed the heat affected zone, is detrimental to performance and should therefore be minimized. While undoubtedly thermal in origin, it is unclear exactly how the thermal environment during laser machining correlates to changes in the PN-junction that reduce performance. In response, we combine in-situ Raman based thermometry measurements with post-event failure analysis to identify the physical mechanisms damaging the junction during laser machining. From this approach, damage is shown to initiate prior to melting and be driven primarily by the diffusion of dopants for fluences that do not induce ablation. Additionally, comparatively small regions of damage are shown to have a large impact on operation.

    9. EIS-0126: Remedial Actions at the Former Climax Uranium Company Uranium Mill Site, Grand Junction, Mesa County, Colorado

      Broader source: Energy.gov [DOE]

      The U.S. Department of Energy developed this EIS to assess the environmental impacts of remediating the residual radioactive materials left from the inactive uranium processing site and associated properties located in Grand Junction, Colorado.

    10. Electronic transport in biphenyl single-molecule junctions with carbon nanotubes electrodes: The role of molecular conformation and chirality

      SciTech Connect (OSTI)

      Brito Silva, C. A. Jr.; Granhen, E. R. [Pos-Graduacao em Engenharia Eletrica, Universidade Federal do Para, 66075-900 Belem, PA (Brazil); Silva, S. J. S. da; Leal, J. F. P. [Pos-Graduacao em Fisica, Universidade Federal do Para, 66075-110 Belem, PA (Brazil); Del Nero, J. [Departamento de Fisica, Universidade Federal do Para, 66075-110 Belem, PA (Brazil); Divisao de Metrologia de Materiais, Instituto Nacional de Metrologia, Normalizacao e Qualidade Industrial, 25250-020 Duque de Caxias, RJ (Brazil); Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ (Brazil); Pinheiro, F. A. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ (Brazil)

      2010-08-15

      We investigate, by means of ab initio calculations, electronic transport in molecular junctions composed of a biphenyl molecule attached to metallic carbon nanotubes. We find that the conductance is proportional to cos{sup 2} {theta}, with {theta} the angle between phenyl rings, when the Fermi level of the contacts lies within the frontier molecular orbitals energy gap. This result, which agrees with experiments in biphenyl junctions with nonorganic contacts, suggests that the cos{sup 2} {theta} law has a more general applicability, irrespective of the nature of the electrodes. We calculate the geometrical degree of chirality of the junction, which only depends on the atomic positions, and demonstrate that it is not only proportional to cos{sup 2} {theta} but also is strongly correlated with the current through the system. These results indicate that molecular conformation plays the preponderant role in determining transport properties of biphenyl-carbon nanotubes molecular junctions.

    11. Superlinear generation of exciton and related paramagnetism induced by forward current in a diamond p-i-n junction

      SciTech Connect (OSTI)

      Natori, Kenji

      2015-02-07

      The concentration of excitons generated in a high-quality diamond p-i-n junction is investigated considering the forward current characteristics of the junction. As the forward current in the junction increases, the exciton concentration increases superlinearly, contrary to the linear increases of the electron and hole concentration. This tendency suggests a superlinear increase in emission intensity due to exciton recombination. The increase rate is more radical than quadratic, in accordance with the observed increase of the integrated intensity of free exciton emission. To estimate the concentration of triplet excitons generated in the p-i-n junction, observation of the paramagnetism due to the exciton spin moment is proposed. The magnetic susceptibility superlinearly increases with the increase in the forward current, unlike any other magnetic property of the device.

    12. Modeling of capacitance transients of thin-film solar cells: A valuable tool to gain information on perturbing layers or interfaces

      SciTech Connect (OSTI)

      Lauwaert, Johan Van Puyvelde, Lisanne; Vrielinck, Henk; Lauwaert, Jeroen; Thybaut, Joris W.

      2014-02-03

      Thin-film electronic and photovoltaic devices often comprise, in addition to the anticipated p-n junctions, additional non-ideal ohmic contacts between layers. This may give rise to additional signals in capacitance spectroscopy techniques that are not directly related to defects in the structure. In this paper, we present a fitting algorithm for transient signals arising from such an additional junction. The fitting results are in excellent agreement with the diode characteristics extracted from static measurements on individual components. Finally, the algorithm is applied for determining the barriers associated with anomalous signals reported for selected CuIn{sub 1x}Ga{sub x}Se{sub 2} and CdTe solar cells.

    13. NREL's Multi-Junction Solar Cells Teach Scientists How to Turn Plants into

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      Powerhouses - News Releases | NREL NREL's Multi-Junction Solar Cells Teach Scientists How to Turn Plants into Powerhouses May 12, 2011 Plants can overcome their evolutionary legacies to become much better at using biological photosynthesis to produce energy, the kind of energy that can power vehicles in the near future, an all-star collection of biologists, physicists, photochemists, and solar scientists has found. A U.S. Department of Energy (DOE) workshop that drew a prestigious collection

    14. U.S. Department of Energy at Grand Junction 2003 Annual Inspection⎯Monticello, Utah

      Office of Legacy Management (LM)

      at Grand Junction 2003 Annual Inspection⎯Monticello, Utah November 2003 Page 1 2003 Annual Inspection of the Monticello Mill Tailings (USDOE) and Monticello Radioactively Contaminated Properties Sites Summary The Monticello site, which includes the U.S. Department of Energy (DOE) Monticello Mill Tailings Site (MMTS) and the Monticello Radioactively Contaminated Properties site, was inspected September 23-25, 2003. A follow-up inspection of the Soil and Sediment properties was conducted on

    15. In the OSTI Collections: Josephson Junctions | OSTI, US Dept of Energy

      Office of Scientific and Technical Information (OSTI)

      Office of Scientific and Technical Information Josephson Junctions Article Acknowledgement: Dr. William N. Watson, Physicist DOE Office of Scientific and Technical Information Terahertz Radiation Examining Subatomic Particles Measuring Material Properties Noise Spin and Supercurrents References Research Organizations Reports available through OSTI's SciTech Connect Additional References When a steady voltage gradient is applied along an ordinary conducting wire, electrons in the wire will

    16. The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions

      SciTech Connect (OSTI)

      Cooper, David; Twitchett-Harrison, Alison C.; Midgley, Paul A.; Dunin-Borkowski, Rafal E.

      2007-05-01

      Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs p-n junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered.

    17. Terahertz time domain interferometry of a SIS tunnel junction and a quantum point contact

      SciTech Connect (OSTI)

      Karadi, C

      1995-09-01

      The author has applied the Terahertz Time Domain Interferometric (THz-TDI) technique to probe the ultrafast dynamic response of a Superconducting-Insulating-Superconducting (SIS) tunnel junction and a Quantum Point Contact (QPC). The THz-TDI technique involves monitoring changes in the dc current induced by interfering two picosecond electrical pulses on the junction as a function of time delay between them. Measurements of the response of the Nb/AlO{sub x}/Nb SIS tunnel junction from 75--200 GHz are in full agreement with the linear theory for photon-assisted tunneling. Likewise, measurements of the induced current in a QPC as a function of source-drain voltage, gate voltage, frequency, and magnetic field also show strong evidence for photon-assisted transport. These experiments together demonstrate the general applicability of the THz-TDI technique to the characterization of the dynamic response of any micron or nanometer scale device that exhibits a non-linear I-V characteristic. 133 refs., 49 figs.

    18. Competition between cotunneling, Kondo effect, and direct tunneling in discontinuous high-anisotropy magnetic tunnel junctions

      SciTech Connect (OSTI)

      Ciudad D.; Arena D.; We, Z.-C.; Hindmarch, A.T.; Negusse, E.; Han, X.-F.Han; Marrows, C.H.

      2012-06-07

      The transition between Kondo and Coulomb blockade effects in discontinuous double magnetic tunnel junctions is explored as a function of the size of the CoPt magnetic clusters embedded between AlO{sub x} tunnel barriers. A gradual competition between cotunneling enhancement of the tunneling magnetoresistance (TMR) and the TMR suppression due to the Kondo effect has been found in these junctions, with both effects having been found to coexist even in the same sample. It is possible to tune between these two states with temperature (at a temperature far below the cluster blocking temperature). In addition, when further decreasing the size of the CoPt clusters, another gradual transition between the Kondo effect and direct tunneling between the electrodes takes place. This second transition shows that the spin-flip processes found in junctions with impurities in the barrier are in fact due to the Kondo effect. A simple theoretical model able to account for these experimental results is proposed.

    19. National Uranium Resource Evaluation. Bibliographic index of Grand Junction office uranium reports

      SciTech Connect (OSTI)

      Johnson, J.B.

      1981-05-01

      In October 1978, Mesa College entered into subcontract with Bendix Field Engineering Corporation (BFEC) to prepare a bibliographic index of the uranium raw materials reports issued by the Grand Junction Office of the US Department of Energy (DOE). Bendix, prime contractor to the Grand Junction Office, operates the Technical Library at the DOE facility. Since the early 1950s, approximately 2700 reports have been issued by the Grand Junction Office. These reports were the results of uranium investigations conducted by federal agencies and their subcontractors. The majority of the reports cover geology, mineralogy, and metallurgy of uranium and/or thorium. No single, complete list of these reports existed. The purpose of this subcontract was to compile a comprehensive index to these reports. The Mesa College geology faculty worked with the BFEC and DOE staffs to develop the format for the index. Undergraduate geology students from Mesa compiled a master record sheet for each report. All reports issued up to January 1, 1979 were included in the bibliography. The bibliography is in preliminary, unedited form. It is being open-filed at this time, on microfiche, to make the information available to the public on a timely basis. The bibliography is divided into a master record list arranged in alpha-numeric order by report identification number, with separate indices arranged by title, author, state and county, 1/sup 0/ x 2/sup 0/ NTMS quadrangle, key words, and exploration area.

    20. Work plan for ground water elevation data recorder/monitor well injection at Grand Junction, Colorado

      SciTech Connect (OSTI)

      Not Available

      1994-07-18

      The purpose of this document is to describe the work that will be performed and the procedures that will be followed during installation of ground water monitor wells and ground water elevation data recorders (data loggers) at the Grand Junction, Colorado, Uranium Mill Tailings Remedial Action (UMTRA) Project site. The monitor wells and data loggers will be used to gather required time-dependent data to investigate the interaction between the shallow aquifer and the Colorado River. Data collection objectives (DCO) identify reasons for collecting data. The following are DCOs for the Grand Junction ground water elevation data recorder/monitor well installation project: long-term continuous ground water level data and periodic ground water samples will be collected to better understand the relationship between surface and ground water at the site; water level and water quality data will eventually be used in future ground water modeling to more firmly establish boundary conditions in the vicinity of the Grand Junction processing site; modeling results will be used to demonstrate and document the potential remedial alternative of natural flushing.

    1. Site observational work plan for the UMTRA project site at Grand Junction, Colorado

      SciTech Connect (OSTI)

      1996-01-01

      This site observational work plan (SOWP) is one of the first Uranium Mill Tailings Remedial Action (UMTRA) Ground Water Project documents developed to select a compliance strategy that meets the UMTRA ground water standards for the Grand Junction site. This SOWP applies information about the Grand Junction site to the compliance strategy selection framework developed in the UMTRA Ground Water Project draft programmatic environmental impact statement. This risk-based, decision-making framework identifies the decision logic for selecting compliance strategies that could be used to meet the ground water standards. The US Department of Energy (DOE) goal is to implement a cost-effective site strategy that complies with the ground water standards and protects human health and the environment. Based on an evaluation of the site characterization and risk assessment data available for the preparation of this SOWP, DOE proposes that the most likely compliance strategy for the Grand Junction site is no remediation with the application of supplemental standards. This proposed strategy is based on a conceptual site model that indicates site-related contamination is confined to a limited-use aquifer as defined in the ground water standards. The conceptual model demonstrates that the uranium processing-related contamination at the site has affected the unconfined alluvial aquifer, but not the deeper confined aquifer.

    2. Final report of the radiological release survey of Building 11 at the Grand Junction Office Facility

      SciTech Connect (OSTI)

      Johnson, R.K.; Corle, S.G.

      1997-09-01

      The U.S. Department of Energy (DOE) Grand Junction Office (GJO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore concentrates and mill tailings during vanadium refining activities of the Manhattan Engineer District, and during sampling, assaying, pilot milling, storage, and brokerage activities conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJO Remedial Action Project (GJORAP) to clean up and restore the facility lands, improvements, and underlying aquifer. WASTREN-Grand Junction is the site contractor for the facility and the remedial action contractor for GJORAP. Building 11 and the underlying soil were found not to be radiologically contaminated; therefore, the building can be released for unrestricted use. Placards have been placed at the building entrances indicating the completion of the radiological release survey and prohibiting the introduction of any radioactive materials within the building without written approvals from the GJO Facilities Operations Manager. This document was prepared in response to a DOE-GJO request for an individual final release report for each GJO building.

    3. Final audit report of remedial action construction at the UMTRA Project, Grand Junction, Colorado, processing site

      SciTech Connect (OSTI)

      1995-02-01

      This final audit report (FAR) for remedial action at the Grand Junction, Colorado, Uranium Mill Tailings Remedial Action (UMTRA) Project processing site consists of a summary of the radiological surveillances/ audits, the quality assurance (QA) in-process surveillances, and the QA final close-out inspection performed by the US Department of Energy (DOE) and Technical Assistance Contractor (TAC). The FAR also summarizes other surveillances performed by the US Nuclear Regulatory Commission (NRC). To summarize, a total of one finding and 127 observations were noted during DOE/TAC audit and surveillance activities. The NRC noted general site-related observations during the OSCRs. Follow-up to responses required from MK-Ferguson for the DOE/TAC finding and observations indicated that all issues related to the Grand Junction processing site were resolved and closed out to the DOE`s satisfaction. The NRC OSCRs resulted in no issues related to the Grand Junction processing site requiring a response from MK-Ferguson.

    4. Final report of the radiological release survey of Building 19 at the Grand Junction Office Facility

      SciTech Connect (OSTI)

      Johnson, R.K.; Corle, S.G.

      1997-09-01

      The U.S. Department of Energy (DOE) Grand Junction Office (GJO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore concentrates and mill tailings during vanadium refining activities of the Manhattan Engineer District, and during sampling, assaying, pilot milling, storage, and brokerage activities conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJO Remedial Action Project (GJORAP) to clean up and restore the facility lands, improvements, and underlying aquifer. WASTREN-Grand Junction is the site contractor for the facility and the remedial action contractor for GJORAP. Building 19 and the underlying soil were found not to be radiologically contaminated; therefore, the building can be released for unrestricted use. Placards have been placed at the building entrances indicating the completion of the radiological release survey and prohibiting the introduction of any radioactive materials within the building without written approvals from the GJO Facilities Operations Manager. This document was prepared in response to a DOE-GJO request for an individual final release report for each GJO building.

    5. Final report of the radiological release survey of Building 54 at the Grand Junction Office Facility

      SciTech Connect (OSTI)

      Johnson, R.K.; Corle, S.G.

      1997-09-01

      The U.S. Department of Energy (DOE) Grand Junction Office (GJO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore concentrates and mill tailings during vanadium refining activities of the Manhattan Engineer District, and during sampling, assaying, pilot milling, storage, and brokerage activities conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJO Remedial Action Project (GJORAP) to clean up and restore the facility lands, improvements, and underlying aquifer. WASTREN-Grand Junction is the site contractor for the facility and the remedial action contractor for GJORAP. Building 54 and the underlying soil were found not to be radiologically contaminated, and can be released for unrestricted use. Placards have been placed at the building entrances indicating the completion of the radiological release survey and prohibiting the introduction of any radioactive materials within the building without written approvals from the GJO Facilities Operations Manager. This document was prepared in response to a DOE-GJO request for an individual release report for each GJO building.

    6. Final report of the radiological release survey of Building 29 at the Grand Junction Office Facility

      SciTech Connect (OSTI)

      Johnson, R.K.; Corle, S.G.

      1997-09-01

      The U.S. Department of Energy (DOE) Grand Junction Office (GJO) occupies a 61.7-acre facility along the Gunnison River near Grand Junction, Colorado. This site was contaminated with uranium ore concentrates and mill tailing during vanadium refining activities of the Manhattan Engineer District, and during sampling, assaying, pilot milling, storage, and brokerage activities conducted for the U.S. Atomic Energy Commission`s domestic uranium procurement program. The DOE Defense Decontamination and Decommissioning Program established the GJO Remedial Action Project (GJORAP) to clean up and restore the facility lands, improvements, and underlying aquifer. WASTREN-Grand Junction is the site contractor for the facility and the remedial action contractor for GJORAP. Building 29 and the underlying soil were found not to be radiologically contaminated; therefore, the building can be released for unrestricted use. Placards have been placed at the building entrances indicating the completion of the radiological release survey and prohibiting the introduction of any radioactive materials within the building without written approvals from the GJO Facilities Operations Manager. This document was prepared in response to a DOE-GJO request for an individual final release report for each GJO building.

    7. Physical model of the contact resistivity of metal-graphene junctions

      SciTech Connect (OSTI)

      Chaves, Ferney A., E-mail: ferneyalveiro.chaves@uab.cat; Jimnez, David [Departament d'Enginyeria Electrnica, Escola d'Enginyeria, Universitat Autnoma de Barcelona, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Cummings, Aron W. [ICN2Institut Catal de Nanocincia i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Roche, Stephan [ICN2Institut Catal de Nanocincia i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); ICREA, Instituci Catalana de Recerca i Estudis Avanats, 08070 Barcelona (Spain)

      2014-04-28

      While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

    8. Optimized capping layers for EUV multilayers

      DOE Patents [OSTI]

      Bajt, Sasa; Folta, James A.; Spiller, Eberhard A.

      2004-08-24

      A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B.sub.4 C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B.sub.4 C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.

    9. Properties of Cu/sub 2-x/SCdS photocells fabricated by a photoelectrochemical layer deposition method

      SciTech Connect (OSTI)

      Inoue, T.; Yamase, T.

      1986-12-01

      Heterojunction photocell with a junction were fabricated by a layer deposition process, resulting from a photoelectrochemical reaction at a CdS electrode surface. The properties of photocells depended on the cell preparation conditions both the sintering of a CdS substrate and the photoformation of Cu/sub 2-x/S. Output power of a photocell was 1.4 mW with Voc = 0.45 V and I/sub sc/ = 6 mA/cm/sup 2/ against the input light irradiation with 34 mW, when a CdS substrate was prepared by sintering at 750/sup 0/C for 3 h and a Cu/sub 2-x/S layer was formed by a photogenerated charge of 40 mC.

    10. Thin-layer black phosphorous/GaAs heterojunction p-n diodes

      SciTech Connect (OSTI)

      Gehring, Pascal; Urcuyo, Roberto; Duong, Dinh Loc; Burghard, Marko; Kern, Klaus

      2015-06-08

      Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorous emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorous layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorous sheet with a thickness on the order of 10?nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorous surface.

    11. Conformational instability of the MARK3 UBA domain compromises ubiquitin recognition and promotes interaction with the adjacent kinase domain

      SciTech Connect (OSTI)

      Murphy, James M.; Korzhnev, Dmitry M.; Ceccarelli, Derek F.; Briant, Douglas J.; Zarrine-Afsar, Arash; Sicheri, Frank; Kay, Lewis E.; Pawson, Tony (Mount Sinai Hospital); (Toronto)

      2012-10-23

      The Par-1/MARK protein kinases play a pivotal role in establishing cellular polarity. This family of kinases contains a unique domain architecture, in which a ubiquitin-associated (UBA) domain is located C-terminal to the kinase domain. We have used a combination of x-ray crystallography and NMR dynamics experiments to understand the interaction of the human (h) MARK3 UBA domain with the adjacent kinase domain as compared with ubiquitin. The x-ray crystal structure of the linked hMARK3 kinase and UBA domains establishes that the UBA domain forms a stable intramolecular interaction with the N-terminal lobe of the kinase domain. However, solution-state NMR studies of the isolated UBA domain indicate that it is highly dynamic, undergoing conformational transitions that can be explained by a folding-unfolding equilibrium. NMR titration experiments indicated that the hMARK3 UBA domain has a detectable but extremely weak affinity for mono ubiquitin, which suggests that conformational instability of the isolated hMARK3 UBA domain attenuates binding to ubiquitin despite the presence of residues typically involved in ubiquitin recognition. Our data identify a molecular mechanism through which the hMARK3 UBA domain has evolved to bind the kinase domain, in a fashion that stabilizes an open conformation of the N- and C-terminal lobes, at the expense of its capacity to engage ubiquitin. These results may be relevant more generally to the 30% of UBA domains that lack significant ubiquitin-binding activity, and they suggest a unique mechanism by which interaction domains may evolve new binding properties.

    12. The North Slope of Alaska and Adjacent Arctic Ocean (NSA/AAO) cart site begins operation: Collaboration with SHEBA and FIRE

      SciTech Connect (OSTI)

      Zak, D. B.; Church, H.; Ivey, M.; Yellowhorse, L.; Zirzow, J.; Widener, K. B.; Rhodes, P.; Turney, C.; Koontz, A.; Stamnes, K.; Storvold, R.; Eide, H. A.; Utley, P.; Eagan, R.; Cook, D.; Hart, D.; Wesely, M.

      2000-04-04

      Since the 1997 Atmospheric Radiation Measurement (ARM) Science Team Meeting, the North Slope of Alaska and Adjacent Arctic Ocean (NSA/AAO) Cloud and Radiation Testbed (CART) site has come into being. Much has happened even since the 1998 Science Team Meeting at which this paper was presented. To maximize its usefulness, this paper has been updated to include developments through July 1998.

    13. Inkjet Deposition of Layer-by-Layer Assembled Films

      SciTech Connect (OSTI)

      Andres, C. M.; Kotov, Nicholas A.

      2010-09-23

      Layer-by-layer assembly (LBL) can create advanced composites with exceptional properties unavailable by other means, but the laborious deposition process and multiple dipping cycles hamper their utilization in microtechnologies and electronics. Multiple rinse steps provide both structural control and thermodynamic stability to LBL multilayers, but they significantly limit their practical applications and contribute significantly to the processing time and waste. Here we demonstrate that by employing inkjet technology one can deliver the necessary quantities of LBL components required for film buildup without excess, eliminating the need for repetitive rinsing steps. This feature differentiates this approach from all other recognized LBL modalities. Using a model system of negatively charged gold nanoparticles and positively charged poly(diallyldimethylammonium) chloride, the material stability, nanoscale control over thickness, and particle coverage offered by the inkjet LBL technique are shown to be equal or better than the case of multilayers made with traditional dipping cycles. The opportunity for fast deposition of complex metallic patterns using a simple inkjet printer is also shown. The additive nature of LBL deposition based on the formation of insoluble nanoparticle-polyelectrolyte complexes of various compositions provides an excellent opportunity for versatile, multicomponent, and noncontact patterning for the simple production of stratified patterns that are much needed in advanced devices.

    14. Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

      SciTech Connect (OSTI)

      Warner, Ellis J.; Gladfelter, Wayne L.; Johnson, Forrest; Campbell, Stephen A.

      2015-03-15

      Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. % Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.

    15. ARM - Measurement - Planetary boundary layer height

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      govMeasurementsPlanetary boundary layer height ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Measurement : Planetary boundary layer height Top of the planetary boundary layer; also known as depth or height of the mixing layer. Categories Atmospheric State Instruments The above measurement is considered scientifically relevant for the following instruments. Refer to the datastream (netcdf) file headers of each

    16. Vehicle cabin cooling system for capturing and exhausting heated boundary layer air from inner surfaces of solar heated windows

      DOE Patents [OSTI]

      Farrington, Robert B.; Anderson, Ren

      2001-01-01

      The cabin cooling system includes a cooling duct positioned proximate and above upper edges of one or more windows of a vehicle to exhaust hot air as the air is heated by inner surfaces of the windows and forms thin boundary layers of heated air adjacent the heated windows. The cabin cooling system includes at least one fan to draw the hot air into the cooling duct at a flow rate that captures the hot air in the boundary layer without capturing a significant portion of the cooler cabin interior air and to discharge the hot air at a point outside the vehicle cabin, such as the vehicle trunk. In a preferred embodiment, the cooling duct has a cross-sectional area that gradually increases from a distal point to a proximal point to the fan inlet to develop a substantially uniform pressure drop along the length of the cooling duct. Correspondingly, this cross-sectional configuration develops a uniform suction pressure and uniform flow rate at the upper edge of the window to capture the hot air in the boundary layer adjacent each window.

    17. Biaxially textured metal substrate with palladium layer

      DOE Patents [OSTI]

      Robbins, William B.

      2002-12-31

      Described is an article comprising a biaxially textured metal substrate and a layer of palladium deposited on at least one major surface of the metal substrate; wherein the palladium layer has desired in-plane and out-of-plane crystallographic orientations, which allow subsequent layers that are applied on the article to also have the desired orientations.

    18. A novel investigation on carbon nanotube/ZnO, Ag/ZnO and Ag/carbon nanotube/ZnO nanowires junctions for harvesting piezoelectric potential on textile

      SciTech Connect (OSTI)

      Khan, Azam Edberg, Jesper; Nur, Omer; Willander, Magnus

      2014-07-21

      In the present work, three junctions were fabricated on textile fabric as an alternative substrate for harvesting piezoelectric potential. First junction was formed on ordinary textile as (textile/multi-walled carbon nanotube film/zinc oxide nanowires (S1: T/CNTs/ZnO NWs)) and the other two were formed on conductive textile with the following layer sequence: conductive textile/zinc oxide nanowires (S2: CT/ZnO NWs) and conductive textile/multi-walled carbon nanotubes film/zinc oxide nanowires (S3: CT/CNTs/ZnO NWs). Piezoelectric potential was harvested by using atomic force microscopy in contact mode for the comparative analysis of the generated piezoelectric potential. ZnO NWs were synthesized by using the aqueous chemical growth method. Surface analysis of the grown nanostructures was performed by using scanning electron microscopy and transmission electron microscopy. The growth orientation and crystalline size were studied by using X-ray diffraction technique. This study reveals that textile as an alternative substrate have many features like cost effective, highly flexible, nontoxic, light weight, soft, recyclable, reproducible, portable, wearable, and washable for nanogenerators fabrication with acceptable performance and with a wide choice of modification for obtaining large amount of piezoelectric potential.

    19. Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing

      SciTech Connect (OSTI)

      Sato, Soshi Honjo, Hiroaki; Niwa, Masaaki; Ikeda, Shoji; Ohno, Hideo; Endoh, Tetsuo

      2015-04-06

      We have investigated the redox reaction on the surface of Ta/CoFeB/MgO/CoFeB magnetic tunnel junction stack samples after annealing at 300, 350, and 400 °C for 1 h using angle-resolved X-ray photoelectron spectroscopy for precise analysis of the chemical bonding states. At a capping tantalum layer thickness of 1 nm, both the capping tantalum layer and the surface of the underneath CoFeB layer in the as-deposited stack sample were naturally oxidized. By comparison of the Co 2p and Fe 2p spectra among the as-deposited and annealed samples, reduction of the naturally oxidized cobalt and iron atoms occurred on the surface of the CoFeB layer. The reduction reaction was more significant at higher annealing temperature. Oxidized cobalt and iron were reduced by boron atoms that diffused toward the surface of the top CoFeB layer. A single CoFeB layer was prepared on SiO{sub 2}, and a confirmatory evidence of the redox reaction with boron diffusion was obtained by angle-resolved X-ray photoelectron spectroscopy analysis of the naturally oxidized surface of the CoFeB single layer after annealing. The redox reaction is theoretically reasonable based on the Ellingham diagram.

    20. New Insights for Improving the Designs of Flexible Duct Junction Boxes (Fact Sheet), Building America Case Study: Technology Solutions for New and Existing Homes, Building Technologies Office (BTO)

      Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

      New Insights for Improving the Designs of Flexible Duct Junction Boxes PROJECT INFORMATION IBACOS www.ibacos.com Construction: Fiberglass duct board or sheet metal junction boxes Type: Flexible duct constant-volume HVAC systems Builders: Those using ACCA Manual D process for sizing duct runs Size: N/A Price Range: N/A Date completed: N/A Climate Zone: All PERFORMANCE DATA Pressure losses are high for flexible duct junction boxes relative to other standard duct fittings; however, contractors

    1. Octonary resistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions

      SciTech Connect (OSTI)

      Yue -Wei Yin; Tao, Jing; Huang, Wei -Chuan; Liu, Yu -Kuai; Yang, Sheng -Wei; Dong, Si -Ning; Zhu, Yi -Mei; Li, Qi; Li, Xiao -Guang

      2015-10-06

      General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45° and 90°) magnetic configurations. As a result, combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.

    2. Dense, layered membranes for hydrogen separation

      DOE Patents [OSTI]

      Roark, Shane E.; MacKay, Richard; Mundschau, Michael V.

      2006-02-21

      This invention provides hydrogen-permeable membranes for separation of hydrogen from hydrogen-containing gases. The membranes are multi-layer having a central hydrogen-permeable layer with one or more catalyst layers, barrier layers, and/or protective layers. The invention also relates to membrane reactors employing the hydrogen-permeable membranes of the invention and to methods for separation of hydrogen from a hydrogen-containing gas using the membranes and reactors. The reactors of this invention can be combined with additional reactor systems for direct use of the separated hydrogen.

    3. Solar cell with silicon oxynitride dielectric layer

      SciTech Connect (OSTI)

      Shepherd, Michael; Smith, David D

      2015-04-28

      Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0layer is disposed on the back surface of the portion of the substrate. A semiconductor layer is disposed on the silicon oxynitride dielectric layer.

    4. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells using AFM-Based Electrical Techniques with Nanometer Resolution

      SciTech Connect (OSTI)

      Jiang, C. S.; Heath, J. T.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.

      2011-01-01

      Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

    5. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells Using AFM-Based Electrical Techniques with Nanometer Resolution: Preprint

      SciTech Connect (OSTI)

      Jiang, C. S.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.; Heath, J. T.

      2011-07-01

      Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

    6. Carcinoembryonic antigen promotes colorectal cancer progression by targeting adherens junction complexes

      SciTech Connect (OSTI)

      Bajenova, Olga; Chaika, Nina; Tolkunova, Elena; Davydov-Sinitsyn, Alexander; Gapon, Svetlana; Thomas, Peter; OBrien, Stephen

      2014-06-10

      Oncomarkers play important roles in the detection and management of human malignancies. Carcinoembryonic antigen (CEA, CEACAM5) and epithelial cadherin (E-cadherin) are considered as independent tumor markers in monitoring metastatic colorectal cancer. They are both expressed by cancer cells and can be detected in the blood serum. We investigated the effect of CEA production by MIP101 colorectal carcinoma cell lines on E-cadherin adherens junction (AJ) protein complexes. No direct interaction between E-cadherin and CEA was detected; however, the functional relationships between E-cadherin and its AJ partners: ?-, ?- and p120 catenins were impaired. We discovered a novel interaction between CEA and beta-catenin protein in the CEA producing cells. It is shown in the current study that CEA overexpression alters the splicing of p120 catenin and triggers the release of soluble E-cadherin. The influence of CEA production by colorectal cancer cells on the function of E-cadherin junction complexes may explain the link between the elevated levels of CEA and the increase in soluble E-cadherin during the progression of colorectal cancer. - Highlights: Elevated level of CEA increases the release of soluble E-cadherin during the progression of colorectal cancer. CEA over-expression alters the binding preferences between E-cadherin and its partners: ?-, ?- and p120 catenins in adherens junction complexes. CEA produced by colorectal cancer cells interacts with beta-catenin protein. CEA over-expression triggers the increase in nuclear beta-catenin. CEA over-expression alters the splicing of p120 catenin protein.

    7. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

      SciTech Connect (OSTI)

      Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

      2014-10-06

      InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

    8. Frequency-domain stimulated and spontaneous light emission signals at molecular junctions

      SciTech Connect (OSTI)

      Harbola, Upendra; Agarwalla, Bijay Kumar; Mukamel, Shaul

      2014-08-21

      Using a diagrammatic superoperator formalism we calculate optical signals at molecular junctions where a single molecule is coupled to two metal leads which are held at different chemical potentials. The molecule starts in a nonequilibrium steady state whereby it continuously exchanges electrons with the leads with a constant electron flux. Expressions for frequency domain optical signals measured in response to continuous laser fields are derived by expanding the molecular correlation functions in terms of its many-body states. The nonunitary evolution of molecular states is described by the quantum master equation.

    9. Multi-state magnetoresistance in ferromagnet/organic-ferromagnet/ferromagnet junctions

      SciTech Connect (OSTI)

      Hu, G. C. Zuo, M. Y.; Li, Y.; Ren, J. F.; Xie, S. J.

      2014-01-20

      Spin-dependent transport through a ferromagnetic metal/organic-ferromagnet/ferromagnet metal junction is investigated theoretically. It is demonstrated that the current through the device strongly depends on the alignment of the magnetization orientations of the electrodes and interlayer. The spin-related electron tunnelling between the ferromagnetic electrodes suffers a further spin selection induced by the spin-polarized states of the central organic ferromagnet. This work indicates an intriguing prospect of organic ferromagnets in spintronic devices, such as four-state magnetoresistance manipulated by a magnetic field.

    10. PCB usage at the Grand Junction Area Office Facility. Final report

      SciTech Connect (OSTI)

      Miller, M.E.; Donivan, S.

      1982-06-01

      The development, implementation, and results of the polychlorinated biphenyl (PCB) identification project at the Grand Junction Area Office (GJAO) are summarized. Methodology for the PCB analysis is described, and results are tabulated. Of the 51 transformers and disconnects in use at GJAO, 15 unites were determined to be PCB-contaminated or filled with PCBs. This number falls within EPA's estimate of 25 to 40 percent of all transformers in use being at least contaminated. Approximately 324 gallons of PCBs and 515 gallons of PCB-contaminated fluids are being used currently. No contaminated transformers or disconnects are in a position to contaminate food or feed products at the facility.

    11. Interim long-term surveillance plan for the Cheney disposal site near, Grand Junction, Colorado

      SciTech Connect (OSTI)

      1997-08-01

      This interim long-term surveillance plan (LTSP) describes the U.S. Department of Energy`s (DOE) long-term care program for the Uranium Mill Tailings Remedial Action (UMTRA) Project Cheney Disposal Site in Mesa County near Grand Junction, Colorado. This LSTP describes the long-term surveillance program the DOE will implement to ensure the Cheney disposal site performs as designed and is cared for in a manner that protects the public health and safety and the environment. Before each disposal site is licensed for custody and long-term care, the Nuclear Regulatory Commission (NRC) requires the DOE to submit such a site-specific LTSP.

    12. Long-term surveillance plan for the Cheney disposal site near Grand Junction, Colorado

      SciTech Connect (OSTI)

      1997-07-01

      This long-term surveillance plan (LTSP) describes the U.S. Department of Energy`s (DOE) long-term care program for the Uranium Mill Tailings Remedial Action (UMTRA) Project Cheney Disposal Site near Grand Junction, Colorado. This LSTP describes the long-term surveillance program the DOE will implement to ensure the Cheney Disposal Site performs as designed and is cared for in a manner that protects the public health and safety and the environment. Before each disposal site is licensed for custody and long-term care, the Nuclear Regulatory Commission (NRC) requires the DOE to submit such a site-specific LTSP.

    13. Unpaired Majorana modes in Josephson-Junction Arrays with gapless bulk excitations

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Pino, M.; Tsvelik, A.; Ioffe, L. B.

      2015-11-06

      In this study, the search for Majorana bound states in solid-state physics has been limited to materials that display a gap in their bulk spectrum. We show that such unpaired states appear in certain quasi-one-dimensional Josephson-junction arrays with gapless bulk excitations. The bulk modes mediate a coupling between Majorana bound states via the Ruderman-Kittel-Yosida-Kasuya mechanism. As a consequence, the lowest energy doublet acquires a finite energy difference. For a realistic set of parameters this energy splitting remains much smaller than the energy of the bulk eigenstates even for short chains of length L~10.

    14. Probing flexible conformations in molecular junctions by inelastic electron tunneling spectroscopy

      SciTech Connect (OSTI)

      Deng, Mingsen; Ye, Gui; Jiang, Jun; Cai, Shaohong; Sun, Guangyu

      2015-01-15

      The probe of flexible molecular conformation is crucial for the electric application of molecular systems. We have developed a theoretical procedure to analyze the couplings of molecular local vibrations with the electron transportation process, which enables us to evaluate the structural fingerprints of some vibrational modes in the inelastic electron tunneling spectroscopy (IETS). Based on a model molecule of Bis-(4-mercaptophenyl)-ether with a flexible center angle, we have revealed and validated a simple mathematical relationship between IETS signals and molecular angles. Our results might open a route to quantitatively measure key geometrical parameters of molecular junctions, which helps to achieve precise control of molecular devices.

    15. Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

      SciTech Connect (OSTI)

      Tomasello, R.; Carpentieri, M.; Finocchio, G.

      2013-12-16

      This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed.

    16. Multi Layer Contaminant Migration Model

      Energy Science and Technology Software Center (OSTI)

      1999-07-28

      This computer software augments and enhances certain calculation included in the previously copyrighted Vadose Zone Contaminant Migration Model. The computational method used in this model recognizes the heterogenous nature of the soils and attempts to account for the variability by using four separate layers to simulate the flow of water through the vadose zone. Therefore, the pore-water velocity calculated by the code will be different than the previous model because it accounts for a widermore » variety of soil properties encountered in the vadose zone. This model also performs an additional screening step than in the previous model. In this model the higher value of two different types of Soil Screening Levels are compared to soil concentrations of contaminants. If the contaminant concentration exceeds the highest of two SSLs, then that contaminant is listed. This is consistent with USEPA's Soil Screening Guidance.« less

    17. Progress on First-Principles Calculations and Experimental Results of Single-crystalline Magnetic Tunnel Junctions with MgO barriers

      SciTech Connect (OSTI)

      Wang, Y.; Zhang, J.; Zhang, Xiaoguang; Wang, Shouguo; Han, Xiufeng

      2009-01-01

      Since the theoretical prediction and experimental observation of giant tunneling magnetoresistance (TMR) effect at room temperature in magnetic tunnel junctions (MTJs) with single-crystalline MgO(001) barrier, MgO-based MTJs have been extensively studied due to their broad potential applications in spintronic devices. In this paper, progress on theoretical calculations and experimental results in MgO-based MTJs is reported. Spin-dependent electronic structure and transport properties of MgO-based MTJs, including structures of Fe(001)/MgO/Fe, Fe(001)/FeO/MgO/Fe, Fe(001)/Mg/MgO/Fe, Fe(001)/Co/MgO/Co/Fe, and Fe(001)/MgO/Fe/MgO/Fe, have been studied using the Layer-KKR first-principles method. The quantitative result not only provide a better way to understand the electronic structures and spin-dependent transport properties of MgO-based MTJs, but also shows a direction to exploit new kinds of spintronic materials with high room-temperature TMR ratio.

    18. Testing epitaxial Co{sub 1.5}Fe{sub 1.5}Ge(001) electrodes in MgO-based magnetic tunnel junctions

      SciTech Connect (OSTI)

      Neggache, A.; Hauet, T.; Petit-Watelot, S.; Boulet, P.; Andrieu, S.; Bertran, F.; Le Fèvre, P.; Ohresser, P.; Devolder, T.; Mewes, C.

      2014-06-23

      The ability of the full Heusler alloy Co{sub 1.5}Fe{sub 1.5}Ge(001) (CFG) to be a Half-Metallic Magnetic (HMM) material is investigated. Epitaxial CFG(001) layers were grown by molecular beam epitaxy. The results obtained using electron diffraction, X-ray diffraction, and X-ray magnetic circular dichroism are consistent with the full Heusler structure. The pseudo-gap in the minority spin density of state typical in HMM is examined using spin-resolved photoemission. Interestingly, the spin polarization found to be negative at E{sub F} in equimolar CoFe(001) is observed to shift to positive values when inserting Ge in CoFe. However, no pseudo-gap is found at the Fermi level, even if moderate magnetization and low Gilbert damping are observed as expected in HMM materials. Magneto-transport properties in MgO-based magnetic tunnel junctions using CFG electrodes are investigated via spin and symmetry resolved photoemission.

    19. Nanomanufacturing : nano-structured materials made layer-by-layer.

      SciTech Connect (OSTI)

      Cox, James V.; Cheng, Shengfeng; Grest, Gary Stephen; Tjiptowidjojo, Kristianto; Reedy, Earl David, Jr.; Fan, Hongyou; Schunk, Peter Randall; Chandross, Michael Evan; Roberts, Scott A.

      2011-10-01

      Large-scale, high-throughput production of nano-structured materials (i.e. nanomanufacturing) is a strategic area in manufacturing, with markets projected to exceed $1T by 2015. Nanomanufacturing is still in its infancy; process/product developments are costly and only touch on potential opportunities enabled by growing nanoscience discoveries. The greatest promise for high-volume manufacturing lies in age-old coating and imprinting operations. For materials with tailored nm-scale structure, imprinting/embossing must be achieved at high speeds (roll-to-roll) and/or over large areas (batch operation) with feature sizes less than 100 nm. Dispersion coatings with nanoparticles can also tailor structure through self- or directed-assembly. Layering films structured with these processes have tremendous potential for efficient manufacturing of microelectronics, photovoltaics and other topical nano-structured devices. This project is designed to perform the requisite R and D to bring Sandia's technology base in computational mechanics to bear on this scale-up problem. Project focus is enforced by addressing a promising imprinting process currently being commercialized.

    20. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint

      SciTech Connect (OSTI)

      Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

      2006-05-01

      We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

    1. Born energy, acid-base equilibrium, structure and interactions of end-grafted weak polyelectrolyte layers

      SciTech Connect (OSTI)

      Nap, R. J.; Tagliazucchi, M.; Szleifer, I.

      2014-01-14

      This work addresses the effect of the Born self-energy contribution in the modeling of the structural and thermodynamical properties of weak polyelectrolytes confined to planar and curved surfaces. The theoretical framework is based on a theory that explicitly includes the conformations, size, shape, and charge distribution of all molecular species and considers the acid-base equilibrium of the weak polyelectrolyte. Namely, the degree of charge in the polymers is not imposed but it is a local varying property that results from the minimization of the total free energy. Inclusion of the dielectric properties of the polyelectrolyte is important as the environment of a polymer layer is very different from that in the adjacent aqueous solution. The main effect of the Born energy contribution on the molecular organization of an end-grafted weak polyacid layer is uncharging the weak acid (or basic) groups and consequently decreasing the concentration of mobile ions within the layer. The magnitude of the effect increases with polymer density and, in the case of the average degree of charge, it is qualitatively equivalent to a small shift in the equilibrium constant for the acid-base equilibrium of the weak polyelectrolyte monomers. The degree of charge is established by the competition between electrostatic interactions, the polymer conformational entropy, the excluded volume interactions, the translational entropy of the counterions and the acid-base chemical equilibrium. Consideration of the Born energy introduces an additional energetic penalty to the presence of charged groups in the polyelectrolyte layer, whose effect is mitigated by down-regulating the amount of charge, i.e., by shifting the local-acid base equilibrium towards its uncharged state. Shifting of the local acid-base equilibrium and its effect on the properties of the polyelectrolyte layer, without considering the Born energy, have been theoretically predicted previously. Account of the Born energy leads

    2. Voltage-controlled magnetic anisotropy in Fe|MgO tunnel junctions studied by x-ray absorption spectroscopy

      SciTech Connect (OSTI)

      Miwa, Shinji Matsuda, Kensho; Tanaka, Kazuhito; Goto, Minori; Suzuki, Yoshishige; Kotani, Yoshinori; Nakamura, Tetsuya

      2015-10-19

      In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe|MgO tunnel junctions was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and magnetic circular dichroism spectroscopy. The Fe|MgO tunnel junctions showed enhanced perpendicular magnetic anisotropy under external negative voltage, which induced charge depletion at the Fe|MgO interface. Despite the application of voltages of opposite polarity, no trace of chemical reaction such as a redox reaction attributed to O{sup 2−} migration was detected in the x-ray absorption spectra of the Fe. The VCMA reported in the Fe|MgO-based magnetic tunnel junctions must therefore originate from phenomena associated with the purely electric effect, that is, surface electron doping and/or redistribution induced by an external electric field.

    3. Quantitative interpretation of the transition voltages in gold-poly(phenylene) thiol-gold molecular junctions

      SciTech Connect (OSTI)

      Wu, Kunlin; Bai, Meilin; Hou, Shimin; Sanvito, Stefano

      2013-11-21

      The transition voltage of three different asymmetric Au/poly(phenylene) thiol/Au molecular junctions in which the central molecule is either benzene thiol, biphenyl thiol, or terphenyl thiol is investigated by first-principles quantum transport simulations. For all the junctions, the calculated transition voltage at positive polarity is in quantitative agreement with the experimental values and shows weak dependence on alterations of the Au-phenyl contact. When compared to the strong coupling at the Au-S contact, which dominates the alignment of various molecular orbitals with respect to the electrode Fermi level, the coupling at the Au-phenyl contact produces only a weak perturbation. Therefore, variations of the Au-phenyl contact can only have a minor influence on the transition voltage. These findings not only provide an explanation to the uniformity in the transition voltages found for ?-conjugated molecules measured with different experimental methods, but also demonstrate the advantage of transition voltage spectroscopy as a tool for determining the positions of molecular levels in molecular devices.

    4. Electronic transport through Al/InN nanowire/Al junctions

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Lu, Tzu -Ming; Wang, George T.; Pan, Wei; Zhao, S.; Mi, Z.

      2016-02-01

      We report non-linear electronic transport measurement of Al/Si-doped n-type InN nanowire/Al junctions performed at T = 0.3 K, below the superconducting transition temperature of the Al electrodes. The proximity effect is observed in these devices through a strong dip in resistance at zero bias. In addition to the resistance dip at zero bias, several resistance peaks can be identified at bias voltages above the superconducting gap of the electrodes, while no resistance dip is observed at the superconducting gap. The resistance peaks disappear as the Al electrodes turn normal beyond the critical magnetic field except one which remains visible atmore » fields several times higher than critical magnetic field. An unexpected non-monotonic magnetic field dependence of the peak position is observed. As a result, we discuss the physical origin of these observations and propose that the resistance peaks could be the McMillan-Rowell oscillations arising from different closed paths localized near different regions of the junctions.« less

    5. Lessons Learned: The Grand Junction Office Site Transfer to Private Ownership

      SciTech Connect (OSTI)

      none,

      2001-02-01

      The U.S. Department of Energy Grand Junction Office (DOE-GJO) in Grand Junction, Colorado, has played an integral role within the DOE complex for many years. GJO has a reputation for outstanding quality in the performance of complex environmental restoration projects, utilizing state-of-the-art technology. Many of the GJO missions have been completed in recent years. In 1998, DOE Headquarters directed GJO to reduce its mortgage costs by transferring ownership of the site and to lease space at a reasonable rate for its ongoing work. A local community group and GJO have entered into a sales contract; signing of the Quitclaim Deed is planned for February 16, 2001. Site transfer tasks were organized as a project with a critical-path schedule to track activities and a Site Transition Decision Plan was prepared that included a decision process flow chart, key tasks, and responsibilities. Specifically, GJO identified the end state with affected parties early on, successfully dealt with site contamination issues, and negotiated a lease-back arrangement, resulting in an estimated savings of more than 60 percent of facility maintenance costs annually. Lessons learned regarding these transition activities could be beneficial to many other sites.

    6. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

      SciTech Connect (OSTI)

      Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

      2014-10-21

      The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

    7. Electric Field Penetration in Au/Nb:SrTiO3 Schottky Junctions Probed by Bias-Dependent Internal Photoemission

      SciTech Connect (OSTI)

      Hikita, Y.

      2011-08-15

      Electric field penetration into the metallic side of a Schottky junction is in principle a universal phenomenon, the magnitude of which increases with the semiconductor permittivity. Here, we quantitatively probe this effect using bias-dependent internal photoemission spectroscopy at the Schottky junction between a large dielectric permittivity semiconductor SrTiO{sub 3} and gold. A clear linear reduction of the barrier height with increasing interface electric field was observed, highlighting the importance of field penetration into the gold. The interfacial permittivity of SrTiO{sub 3} at the interface is reduced from the bulk value, reflecting intrinsic suppression at the interface.

    8. GaN-based vertical-cavity laser performance improvements using tunnel-junction-cascaded active regions

      SciTech Connect (OSTI)

      Piprek, Joachim

      2014-07-07

      This Letter investigates the output power enhancement achieved by tunnel junction insertion into the InGaN multi-quantum well (MQW) active region of a 410?nm vertical-cavity surface-emitting laser which enables the repeated use of carriers for light generation (carrier recycling). While the number of quantum wells remains unchanged, the tunnel junction eliminates absorption caused by the non-uniform MQW carrier distribution. The thermal resistance drops and the excess bias lead to a surprisingly small rise in self-heating.

    9. Observation of Energy Levels Quantization in Underdamped Josephson Junctions above the Classical-Quantum Regime Crossover Temperature

      SciTech Connect (OSTI)

      Silvestrini, P.; Ruggiero, B.; Russo, M.; Silvestrini, P.; Ruggiero, B.; Russo, M.; Palmieri, V.G.

      1997-10-01

      We present a clear observation of the presence of energy levels quantization in high quality Nb-AlO{sub x} -Nb underdamped Josephson junctions at temperatures above the quantum crossover temperature. This has been possible by extending the measurements of the escape rate out of the zero-voltage state at higher sweeping frequency (dI/dt up to 25A/sec) in order to induce nonstationary conditions in the energy potential describing the junction dynamics. {copyright} {ital 1997} {ital The American Physical Society}

    10. Unraveling the voltage fade mechanism in layer Li-Mn-rich electrode: formation of the tetrahedral cations for spinel conversion

      SciTech Connect (OSTI)

      Mohanty, Debasish; Li, Jianlin; Abraham, Daniel P; Huq, Ashfia; Payzant, E Andrew; Wood III, David L; Daniel, Claus

      2014-01-01

      Discovery of high-voltage layered lithium-and manganese-rich (LMR) composite oxide electrode has dramatically enhanced the energy density of current Li-ion energy storage systems. However, practical usage of these materials is currently not viable because of their inability to maintain a consistent voltage profile (voltage fading) during subsequent charge-discharge cycles. This report rationalizes the cause of this voltage fade by providing the evidence of layer to spinel-like (LSL) structural evolution pathways in the host Li1.2Mn0.55Ni0.15Co0.1O2 LMR composite oxide. By employing neutron powder diffraction, and temperature dependent magnetic susceptibility, we show that LSL structural rearrangement in LMR oxide occurs through a tetrahedral cation intermediate via: i) diffusion of lithium atoms from octahedral to tetrahedral sites of the lithium layer [(LiLioct LiLitet] which is followed by the dispersal of the lithium ions from the adjacent octahedral site of the metal layer to the tetrahedral sites of lithium layer [LiTM oct LiLitet]; and ii) migration of Mn from the octahedral sites of the transition metal layer to the permanent octahedral site of lithium layer via tetrahedral site of lithium layer [MnTMoct MnLitet MnLioct)]. The findings opens the door to the potential routes to mitigate this atomic restructuring in the high-voltage LMR composite oxide cathodes by manipulating the composition/structure for practical use in high-energy-density lithium-ion batteries.

    11. Solar collector with blackened layer facing insulation

      SciTech Connect (OSTI)

      Brugger, R.

      1981-05-12

      A solar collector has a surface turned toward the sun and forms a heat exchange cell which has at least one wall composed of sheet aluminum. A tramsmitting layer of such a wall or the absorption layer thereof is a black layer of aluminum oxide containing Ag or Sn and formed unitarily on the aluminum sheet, e.g. By a chemical or electrochemical process.

    12. Size distributions of boundary-layer clouds

      SciTech Connect (OSTI)

      Stull, R.; Berg, L.; Modzelewski, H.

      1996-04-01

      Scattered fair-weather clouds are triggered by thermals rising from the surface layer. Not all surface layer air is buoyant enough to rise. Also, each thermal has different humidities and temperatures, resulting in interthermal variability of their lifting condensation levels (LCL). For each air parcel in the surface layer, it`s virtual potential temperature and it`s LCL height can be computed.

    13. Superconductive articles including cerium oxide layer

      DOE Patents [OSTI]

      Wu, Xin D.; Muenchausen, Ross E.

      1993-01-01

      A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.

    14. Manganese containing layer for magnetic recording media

      DOE Patents [OSTI]

      Lambeth, David N.; Lee, Li-Lien; Laughlin, David E.

      1999-01-01

      The present invention provides for a magnetic recording media incorporating Mn-containing layers between a substrate and a magnetic layer to provide media having increased coercivity and lower noise. The Mn-containing layer can be incorporated in a rotating, translating or stationary recording media to operate in conjunction with magnetic transducing heads for recording and reading of magnetic data, as well as other applications. The magnetic recording medium of the invention preferably includes a Co or Co alloy film magnetic layer, and Mn-containing layer, preferably comprised of VMn, TiMn, MnZn, CrMnMo, CrMnW, CrMnV, and CrMnTi, and most preferably a CrMn alloy, disposed between the substrate and the magnetic layer to promote an epitaxial crystalline structure in the magnetic layer. The medium can further include seed layers, preferably polycrystalline MgO for longitudinal media, underlayers, and intermediate layers. Underlayers and intermediate layers are comprised of materials having either an A2 structure or a B2-ordered crystalline structure disposed between the seed layer and the magnetic layer. Materials having an A2 structure are preferably Cr or Cr alloys, such as CrV, CrMo, CrW and CrTi. Materials having a B2-ordered structure having a lattice constant that is substantially comparable to that of Cr, such as those preferably selected from the group consisting of NiAl, AILCo, FeAl, FeTi, CoFe, CoTi, CoHf, CoZr, NiTi, CuBe, CuZn, A-LMn, AlRe, AgMg, and Al.sub.2 FeMn.sub.2, and is most preferably FeAl or NiAl.

    15. Method to fabricate layered material compositions

      DOE Patents [OSTI]

      Fleming, James G.; Lin, Shawn-Yu

      2002-01-01

      A new class of processes suited to the fabrication of layered material compositions is disclosed. Layered material compositions are typically three-dimensional structures which can be decomposed into a stack of structured layers. The best known examples are the photonic lattices. The present invention combines the characteristic features of photolithography and chemical-mechanical polishing to permit the direct and facile fabrication of, e.g., photonic lattices having photonic bandgaps in the 0.1-20.mu. spectral range.

    16. Method to fabricate layered material compositions

      DOE Patents [OSTI]

      Fleming, James G.; Lin, Shawn-Yu

      2004-11-02

      A new class of processes suited to the fabrication of layered material compositions is disclosed. Layered material compositions are typically three-dimensional structures which can be decomposed into a stack of structured layers. The best known examples are the photonic lattices. The present invention combines the characteristic features of photolithography and chemical-mechanical polishing to permit the direct and facile fabrication of, e.g., photonic lattices having photonic bandgaps in the 0.1-20.mu. spectral range.

    17. Multiple pass and multiple layer friction stir welding and material enhancement processes

      DOE Patents [OSTI]

      Feng, Zhili [Knoxville, TN; David, Stan A. [Knoxville, TN; Frederick, David Alan [Harriman, TN

      2010-07-27

      Processes for friction stir welding, typically for comparatively thick plate materials using multiple passes and multiple layers of a friction stir welding tool. In some embodiments a first portion of a fabrication preform and a second portion of the fabrication preform are placed adjacent to each other to form a joint, and there may be a groove adjacent the joint. The joint is welded and then, where a groove exists, a filler may be disposed in the groove, and the seams between the filler and the first and second portions of the fabrication preform may be friction stir welded. In some embodiments two portions of a fabrication preform are abutted to form a joint, where the joint may, for example, be a lap joint, a bevel joint or a butt joint. In some embodiments a plurality of passes of a friction stir welding tool may be used, with some passes welding from one side of a fabrication preform and other passes welding from the other side of the fabrication preform.

    18. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

      SciTech Connect (OSTI)

      Masuda, T; Tomasulo, S; Lang, JR; Lee, ML

      2015-03-07

      We have investigated similar to 2.0 eV (AlxGa1-x)(0.51)In0.49P and similar to 1.9 eV Ga0.51In0.49P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (AlxGa1-x)(0.51)In0.49P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V-oc) ranging from 1.29 to 1.30 V for Ga0.51In0.49P cells, and 1.35-1.37 V for (AlxGa1-x)(0.51)In0.49P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W-oc = E-g/q - V-oc) of Ga0.51In0.49P cells to decrease from similar to 575 mV to similar to 565 mV, while that of (AlxGa1-x)(0.51)In0.49P cells remained nearly constant at 620 mV. The constant Woc as a function of substrate offcut for (AlxGa1-x)(0.51)In0.49P implies greater losses from non-radiative recombination compared with the Ga0.51In0.49P devices. In addition to larger Woc values, the (AlxGa1-x)(0.51)In0.49P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga0.51In0.49P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (AlxGa1-x)(0.51)In0.49P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells. (C) 2015 AIP Publishing LLC.

    19. Automatic position calculating imaging radar with low-cost synthetic aperture sensor for imaging layered media

      DOE Patents [OSTI]

      Mast, Jeffrey E. (Livermore, CA)

      1998-01-01

      An imaging system for analyzing structures comprises a radar transmitter and receiver connected to a timing mechanism that allows a radar echo sample to be taken at a variety of delay times for each radar pulse transmission. The radar transmitter and receiver are coupled to a position determining system that provides the x,y position on a surface for each group of samples measured for a volume from the surface. The radar transmitter and receiver are moved about the surface to collect such groups of measurements from a variety of x,y positions. Return signal amplitudes represent the relative reflectivity of objects within the volume and the delay in receiving each signal echo represents the depth at which the object lays in the volume and the propagation speeds of the intervening material layers. Successively deeper z-planes are backward propagated from one layer to the next with an adjustment for variations in the expected propagation velocities of the material layers that lie between adjacent z-planes.

    20. Automatic position calculating imaging radar with low-cost synthetic aperture sensor for imaging layered media

      DOE Patents [OSTI]

      Mast, J.E.

      1998-08-18

      An imaging system for analyzing structures comprises a radar transmitter and receiver connected to a timing mechanism that allows a radar echo sample to be taken at a variety of delay times for each radar pulse transmission. The radar transmitter and receiver are coupled to a position determining system that provides the x,y position on a surface for each group of samples measured for a volume from the surface. The radar transmitter and receiver are moved about the surface to collect such groups of measurements from a variety of x,y positions. Return signal amplitudes represent the relative reflectivity of objects within the volume and the delay in receiving each signal echo represents the depth at which the object lays in the volume and the propagation speeds of the intervening material layers. Successively deeper z-planes are backward propagated from one layer to the next with an adjustment for variations in the expected propagation velocities of the material layers that lie between adjacent z-planes. 10 figs.

    1. Sodium-layer laser guide stars

      SciTech Connect (OSTI)

      Friedman, H.W.

      1993-08-03

      The requirements and design of a laser system to generate a sodium- layer beacon is presented. Early results of photometry and wavefront sensing are given.

    2. Enhanced Densification of SDC Barrier Layers

      SciTech Connect (OSTI)

      Hardy, John S.; Templeton, Jared W.; Lu, Zigui; Stevenson, Jeffry W.

      2011-09-12

      This technical report explores the Enhanced Densification of SCD Barrier Layers A samaria-doped ceria (SDC) barrier layer separates the lanthanum strontium cobalt ferrite (LSCF) cathode from the yttria-stabilized zirconia (YSZ) electrolyte in a solid oxide fuel cell (SOFC) to prevent the formation of electrically resistive interfacial SrZrO{sub 3} layers that arise from the reaction of Sr from the LSCF with Zr from the YSZ. However, the sintering temperature of this SDC layer must be limited to {approx}1200 C to avoid extensive interdiffusion between SDC and YSZ to form a resistive CeO{sub 2}-ZrO{sub 2} solid solution. Therefore, the conventional SDC layer is often porous and therefore not as impervious to Sr-diffusion as would be desired. In the pursuit of improved SOFC performance, efforts have been directed toward increasing the density of the SDC barrier layer without increasing the sintering temperature. The density of the SDC barrier layer can be greatly increased through small amounts of Cu-doping of the SDC powder together with increased solids loading and use of an appropriate binder system in the screen print ink. However, the resulting performance of cells with these barrier layers did not exhibit the expected increase in accordance with that achieved with the prototypical PLD SDC layer. It was determined by XRD that increased sinterability of the SDC also results in increased interdiffusivity between the SDC and YSZ, resulting in formation of a highly resistive solid solution.

    3. Organic photovoltaic cells utilizing ultrathin sensitizing layer

      DOE Patents [OSTI]

      Forrest, Stephen R.; Yang, Fan; Rand, Barry P.

      2011-09-06

      A photosensitive device includes a plurality of organic photoconductive materials disposed in a stack between a first electrode and a second electrode, including a first continuous layer of donor host material, a second continuous layer of acceptor host material, and at least one other organic photoconductive material disposed as a plurality of discontinuous islands between the first continuous layer and the second continuous layer. Each of these other photoconductive materials has an absorption spectra different from the donor host material and the acceptor host material. Preferably, each of the discontinuous islands consists essentially of a crystallite of the respective organic photoconductive material, and more preferably, the crystallites are nanocrystals.

    4. Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

      SciTech Connect (OSTI)

      Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

      2012-04-15

      We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

    5. Interaction between the lower hybrid wave and density fluctuations in the scrape-off layer

      SciTech Connect (OSTI)

      Peysson, Y.; Madi, M.; Kabalan, K.; Decker, J.

      2015-12-10

      In the present paper, the perturbation of the launched power spectrum of the Lower Hybrid wave at the separatrix by electron density fluctuations in the scrape-off layer is investigated. Considering a slab geometry with magnetic field lines parallel to the toroidal direction, the full wave equation is solved using Comsol Multiphysics® for a fully active multi-junction like LH antenna made of two modules. When electron density fluctuations are incorporated in the dielectric tensor over a thin perturbed layer in front of the grill, it is shown that the power spectrum may be strongly modified from the antenna mouth to the plasma separatrix as the wave propagates. The diffraction effect leads to the appearance of multiple satellite lobes with randomly varying positions, a feature consistent with the recently developed model that has been applied successfully to high density discharges on the Tokamak Tore Supra corresponding to the large spectral gap regime [Decker J. et al. Phys. Plasma 21 (2014) 092504]. The perturbation is found to be maximum for the Fourier components of the fluctuating spectrum in the vicinity of the launched LH wavelength.

    6. Modeling the summertime Arctic cloudy boundary layer

      SciTech Connect (OSTI)

      Curry, J.A.; Pinto, J.O.; McInnes, K.L.

      1996-04-01

      Global climate models have particular difficulty in simulating the low-level clouds during the Arctic summer. Model problems are exacerbated in the polar regions by the complicated vertical structure of the Arctic boundary layer. The presence of multiple cloud layers, a humidity inversion above cloud top, and vertical fluxes in the cloud that are decoupled from the surface fluxes, identified in Curry et al. (1988), suggest that models containing sophisticated physical parameterizations would be required to accurately model this region. Accurate modeling of the vertical structure of multiple cloud layers in climate models is important for determination of the surface radiative fluxes. This study focuses on the problem of modeling the layered structure of the Arctic summertime boundary-layer clouds and in particular, the representation of the more complex boundary layer type consisting of a stable foggy surface layer surmounted by a cloud-topped mixed layer. A hierarchical modeling/diagnosis approach is used. A case study from the summertime Arctic Stratus Experiment is examined. A high-resolution, one-dimensional model of turbulence and radiation is tested against the observations and is then used in sensitivity studies to infer the optimal conditions for maintaining two separate layers in the Arctic summertime boundary layer. A three-dimensional mesoscale atmospheric model is then used to simulate the interaction of this cloud deck with the large-scale atmospheric dynamics. An assessment of the improvements needed to the parameterizations of the boundary layer, cloud microphysics, and radiation in the 3-D model is made.

    7. Field-current phase diagrams of in-plane spin transfer torque memory cells with low effective magnetization storage layers

      SciTech Connect (OSTI)

      San Emeterio Alvarez, L.; Lacoste, B.; Rodmacq, B.; Sousa, R. C. Dieny, B.; Pakala, M.

      2014-05-07

      Field-current phase diagrams were measured on in-plane anisotropy Co{sub 60}Fe{sub 20}B{sub 20} magnetic tunnel junctions to obtain the spin transfer torque (STT) field-current switching window. These measurements were used to characterise junctions with varying free layer thicknesses from 2.5 down to 1.1 nm having a reduced effective demagnetizing field due to the perpendicular magnetic anisotropy at CoFeB/MgO interface. Diagrams were obtained with 100 ns current pulses, of either same or alternating polarity. When consecutive pulses have the same polarity, it is possible to realize the STT switching even for conditions having a low switching probability. This was evidenced in diagrams with consecutive pulses of alternating polarity, with 100% switching obtained at 4.7 MA/cm{sup 2}, compared to the lower 3.4 MA/cm{sup 2} value for same polarity pulses. Although the low level of the current density window is higher in alternating polarity diagrams, the field window in both diagrams is the same and therefore independent of the pulse polarity sequence.

    8. Perovskite LaRhO{sub 3} as a p-type active layer in oxide photovoltaics

      SciTech Connect (OSTI)

      Nakamura, Masao Krockenberger, Yoshiharu; Fujioka, Jun; Kawasaki, Masashi; Tokura, Yoshinori

      2015-02-16

      Perovskite-type transition-metal oxides have a wide variety of physical properties and triggered intensive research on functional devices in the form of heteroepitaxial junctions. However, there is a missing component that is a p-type conventional band semiconductor. LaRhO{sub 3} (LRO) is one of very few promising candidates having its bandgap between filled t{sub 2g} and empty e{sub g} of Rh in low-spin state, but there has been no report on the synthesis of large-size single crystals or thin films. Here, we report on the junction properties of single-crystalline thin films of LRO grown on (110) oriented Nb-doped SrTiO{sub 3} substrates. The external quantum efficiency of the photo-electron conversion exceeds 1% in the visible-light region due to the wide depletion layer and long diffusion length of minority carriers in LRO. Clear indication of p-type band semiconducting character in a perovskite oxide of LRO will pave a way to explore oxide electronics of perovskite heterostructures.

    9. Cyclone separator having boundary layer turbulence control

      DOE Patents [OSTI]

      Krishna, Coimbatore R.; Milau, Julius S.

      1985-01-01

      A cyclone separator including boundary layer turbulence control that is operable to prevent undue build-up of particulate material at selected critical areas on the separator walls, by selectively varying the fluid pressure at those areas to maintain the momentum of the vortex, thereby preventing particulate material from inducing turbulence in the boundary layer of the vortical fluid flow through the separator.

    10. Atomic Layer Deposition | Argonne National Laboratory

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      Atomic Layer Deposition New nanophase thin film materials with properties tailored to specifically meet the needs of industry New software simulates ALD over multiple length scale, saving industry time and money on developing specialized tools PDF icon Atomic_Layer_Deposition

    11. Epitaxial growth of silicon for layer transfer

      DOE Patents [OSTI]

      Teplin, Charles; Branz, Howard M

      2015-03-24

      Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

    12. Instability limits for spontaneous double layer formation

      SciTech Connect (OSTI)

      Carr, J. Jr.; Department of Physics, Texas Lutheran University, Seguin, Texas 78155 ; Galante, M. E.; McCarren, D.; Scime, E. E.; Sears, S.; VanDervort, R. W.; Magee, R. M.; TriAlpha Energy, Inc., Foothill Ranch, California 92610 ; Reynolds, E.

      2013-11-15

      We present time-resolved measurements that demonstrate that large amplitude electrostatic instabilities appear in pulsed, expanding helicon plasmas at the same time as particularly strong double layers appear in the expansion region. A significant cross-correlation between the electrostatic fluctuations and fluctuations in the number of ions accelerated by the double layer electric field is observed. No correlation is observed between the electrostatic fluctuations and ions that have not passed through the double layer. These measurements confirm that the simultaneous appearance of the electrostatic fluctuations and the double layer is not simple coincidence. In fact, the accelerated ion population is responsible for the growth of the instability. The double layer strength, and therefore, the velocity of the accelerated ions, is limited by the appearance of the electrostatic instability.

    13. Technical basis for radiological release of Grand Junction Office Building 2. Volume 2, dose assessment supporting data

      SciTech Connect (OSTI)

      1997-07-01

      The second volume of the Grand Junction Office Action Program Technical Basis for Radiological Release of Grand Junction Office Building 2 report includes the data quality objectives (DQO), sampling plan, collected data, and analysis used to model future radiation doses to members of the public occupying Building 2 on the U.S. Department of Energy (DOE) Grand Junction Office (GJO) site. This volume was assembled by extracting relevant components of the Grand Junction Projects Office Remedial Action Project Building 2 Public Dose Evaluation (DOE 1996) and inserting recent additional data that was gathered and dose pathway modeling that was performed. The intent of this document is to provide all derived guidance decisions, assumptions, measured data, testing results, and pathway modeling software input and output data that supports the discussion and determinations presented in Volume 1 of this report. For constructive employment of this document, the reader is encouraged to closely follow Volume 1 for proper association with the segment of information being examined.

    14. The benzene metabolite trans,trans-muconaldehyde blocks gap junction intercellular communication by cross-linking connexin43

      SciTech Connect (OSTI)

      Rivedal, Edgar Leithe, Edward

      2008-11-01

      Benzene is used at large volumes in many different human activities. Hematotoxicity and cancer-causation as a result of benzene exposure was recognized many years ago, but the mechanisms involved remain unclear. Aberrant regulation of gap junction intercellular communication (GJIC) has been linked to both cancer induction and interference with normal hematopoietic development. We have previously suggested that inhibition of GJIC may play a role in benzene toxicity since benzene metabolites were found to block GJIC, the ring-opened trans,trans-muconaldehyde (MUC) being the most potent metabolite. In the present work we have studied the molecular mechanisms underlying the MUC-induced inhibition of gap junctional communication. We show that MUC induces cross-linking of the gap junction protein connexin43 and that this is likely to be responsible for the induced inhibition of GJIC, as well as the loss of connexin43 observed in Western blots. We also show that glutaraldehyde possesses similar effects as MUC, and we compare the effects to that of formaldehyde. The fact that glutaraldehyde and formaldehyde have been associated with induction of leukemia as well as disturbance of hematopoiesis, strengthens the possible link between the effect of MUC on gap junctions, and the toxic effects of benzene.

    15. On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate

      SciTech Connect (OSTI)

      Kolpakov, D. A. Zvonkov, B. N.; Nekorkin, S. M.; Dikareva, N. V.; Aleshkin, V. Ya.; Dubinov, A. A.

      2015-11-15

      A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.

    16. Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition

      DOE Patents [OSTI]

      Cho, Jung Young; Ahn, Dongjoon; Salvador, James R.; Meisner, Gregory P.

      2016-06-07

      A thermoelectric material includes a substrate particle and a plurality of conformal oxide layers formed on the substrate particle. The plurality of conformal oxide layers has a total oxide layer thickness ranging from about 2 nm to about 20 nm. The thermoelectric material excludes oxide nanoparticles. A method of making the thermoelectric material is also disclosed herein.

    17. Literature and data review for the surface-water pathway: Columbia River and adjacent coastal areas. Hanford Environmental Dose Reconstruction Project

      SciTech Connect (OSTI)

      Walters, W.H.; Dirkes, R.L.; Napier, B.A.

      1992-04-01

      As part of the Hanford Environmental Dose Reconstruction Project, Pacific Northwest Laboratory reviewed literature and data on radionuclide concentrations and distribution in the water, sediment, and biota of the Columbia River and adjacent coastal areas. Over 600 documents were reviewed including Hanford reports, reports by offsite agencies, journal articles, and graduate theses. Certain radionuclide concentration data were used in preliminary estimates of individual dose for the 1964--1966 time period. This report summarizes the literature and database review and the results of the preliminary dose estimates.

    18. Literature and data review for the surface-water pathway: Columbia River and adjacent coastal areas. Hanford Environmental Dose Reconstruction Project

      SciTech Connect (OSTI)

      Walters, W.H.; Dirkes, R.L.; Napier, B.A.

      1992-11-01

      As part of the Hanford Environmental Dose Reconstruction (HEDR) Project, Battelle, Pacific Northwest Laboratories reviewed literature and data on radionuclide concentrations and distribution in the water, sediment, and biota of the Columbia River and adjacent coastal areas. Over 600 documents were reviewed including Hanford reports, reports by offsite agencies, journal articles, and graduate theses. Radionuclide concentration data were used in preliminary estimates of individual dose for the period 1964 through 1966. This report summarizes the literature and database reviews and the results of the preliminary dose estimates.

    19. Edge-channel interferometer at the graphene quantum Hall pn junction

      SciTech Connect (OSTI)

      Morikawa, Sei; Moriya, Rai; Masubuchi, Satoru Machida, Tomoki; Watanabe, Kenji; Taniguchi, Takashi

      2015-05-04

      We demonstrate a quantum Hall edge-channel interferometer in a high-quality graphene pn junction under a high magnetic field. The co-propagating p and n quantum Hall edge channels traveling along the pn interface functions as a built-in Aharonov-Bohm-type interferometer, the interferences in which are sensitive to both the external magnetic field and the carrier concentration. The trajectories of peak and dip in the observed resistance oscillation are well reproduced by our numerical calculation that assumes magnetic flux quantization in the area enclosed by the co-propagating edge channels. Coherent nature of the co-propagating edge channels is confirmed by the checkerboard-like pattern in the dc-bias and magnetic-field dependences of the resistance oscillations.

    20. A quasi-classical mapping approach to vibrationally coupled electron transport in molecular junctions

      SciTech Connect (OSTI)

      Li, Bin; Miller, William H.; Wilner, Eli Y.; Thoss, Michael

      2014-03-14

      We develop a classical mapping approach suitable to describe vibrationally coupled charge transport in molecular junctions based on the Cartesian mapping for many-electron systems [B. Li and W. H. Miller, J. Chem. Phys. 137, 154107 (2012)]. To properly describe vibrational quantum effects in the transport characteristics, we introduce a simple transformation rewriting the Hamiltonian in terms of occupation numbers and use a binning function to facilitate quantization. The approach provides accurate results for the nonequilibrium Holstein model for a range of bias voltages, vibrational frequencies, and temperatures. It also captures the hallmarks of vibrational quantum effects apparent in step-like structure in the current-voltage characteristics at low temperatures as well as the phenomenon of Franck-Condon blockade.

    1. Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching

      SciTech Connect (OSTI)

      White, T. C.; Mutus, J. Y.; Hoi, I.-C.; Barends, R.; Campbell, B.; Chen, Yu; Chen, Z.; Chiaro, B.; Dunsworth, A.; Jeffrey, E.; Kelly, J.; Neill, C.; O'Malley, P. J. J.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; Martinis, John M.; Megrant, A.; Chaudhuri, S.; and others

      2015-06-15

      Josephson parametric amplifiers have become a critical tool in superconducting device physics due to their high gain and quantum-limited noise. Traveling wave parametric amplifiers (TWPAs) promise similar noise performance, while allowing for significant increases in both bandwidth and dynamic range. We present a TWPA device based on an LC-ladder transmission line of Josephson junctions and parallel plate capacitors using low-loss amorphous silicon dielectric. Crucially, we have inserted ?/4 resonators at regular intervals along the transmission line in order to maintain the phase matching condition between pump, signal, and idler and increase gain. We achieve an average gain of 12?dB across a 4?GHz span, along with an average saturation power of ?92 dBm with noise approaching the quantum limit.

    2. Designing π-stacked molecular structures to control heat transport through molecular junctions

      SciTech Connect (OSTI)

      Kiršanskas, Gediminas; Li, Qian; Solomon, Gemma C.; Flensberg, Karsten; Leijnse, Martin

      2014-12-08

      We propose and analyze a way of using π stacking to design molecular junctions that either enhance or suppress a phononic heat current, but at the same time remain conductors for an electric current. Such functionality is highly desirable in thermoelectric energy converters, as well as in other electronic components where heat dissipation should be minimized or maximized. We suggest a molecular design consisting of two masses coupled to each other with one mass coupled to each lead. By having a small coupling (spring constant) between the masses, it is possible to either reduce or perhaps more surprisingly enhance the phonon conductance. We investigate a simple model system to identify optimal parameter regimes and then use first principle calculations to extract model parameters for a number of specific molecular realizations, confirming that our proposal can indeed be realized using standard molecular building blocks.

    3. Comparison of Theoretical Efficiencies of Multi-junction Concentrator Solar Cells

      SciTech Connect (OSTI)

      Kurtz, S.; Myers, D.; McMahon, W. E.; Geisz, J.; Steiner, M.

      2008-01-01

      Champion concentrator cell efficiencies have surpassed 40% and now many are asking whether the efficiencies will surpass 50%. Theoretical efficiencies of >60% are described for many approaches, but there is often confusion about the theoretical efficiency for a specific structure. The detailed balance approach to calculating theoretical efficiency gives an upper bound that can be independent of material parameters and device design. Other models predict efficiencies that are closer to those that have been achieved. Changing reference spectra and the choice of concentration further complicate comparison of theoretical efficiencies. This paper provides a side-by-side comparison of theoretical efficiencies of multi-junction solar cells calculated with the detailed balance approach and a common one-dimensional-transport model for different spectral and irradiance conditions. Also, historical experimental champion efficiencies are compared with the theoretical efficiencies.

    4. Origin of the smaller conductances of Rh, Pb, and Co atomic junctions in hydrogen environment

      SciTech Connect (OSTI)

      Li, Xue; Chen, Mingyan; Ye, Xiang; Xie, Yi-qun; Ke, San-huang

      2015-02-14

      We study theoretically the structural and electronic origins of the smaller conductances (one conductance quantum, G{sub 0}, and smaller) of Rh, Pb, and Co metal atomic junctions (MAJs) in a hydrogen environment, as were measured in recent experiments. For the Rh MAJs, the 1G{sub 0} conductance is attributed to a stable contact bridged by a single hydrogen molecule whose antibonding state provides a single transport channel. For the Pb and Co MAJs the 1G{sub 0} conductance is, however, ascribed to a linear atomic chain adsorbing two dissociated H atoms, which largely reduces the density of states at the Fermi energy with respect to the pure ones. On the other hand, the small conductances of 0.3G{sub 0} (Rh) and 0.2G{sub 0} (Co) are due to H-decorated atomic chains connected to electrodes by a H atom.

    5. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

      2015-03-24

      With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

    6. Macroscopic quantum tunneling in small Josephson junctions in a magnetic field.

      SciTech Connect (OSTI)

      Ovchinnikov, Yu. N.; Barone, A.; Varlamov, A. A.; Materials Science Division; Max-Planck Inst. for Physics of Complex Systems; Landau Inst. Theoretical Physics; Univ. di Napoli Federico II; Coherentia-INFM, CNR

      2007-01-01

      We study the phenomenon of macroscopic quantum tunneling (MQT) in small Josephson junctions (JJ) with an externally applied magnetic field. The latter results in the appearance of the Fraunhofer type modulation of the current density along the barrier. The problem of MQT for a pointlike JJ is reduced to the motion of the quantum particle in the washboard potential. In the case of a finite size JJ under consideration, this problem corresponds to a MQT in a potential which itself, besides the phase, depends on space variables. The general expression for the crossover temperature To between thermally activated and macroscopic quantum tunneling regimes and the escaping time {tau}{sub esc} have been calculated.

    7. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

      SciTech Connect (OSTI)

      Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

      2015-03-24

      With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

    8. Interfacial electronic transport phenomena in single crystalline Fe-MgO-Fe thin barrier junctions

      SciTech Connect (OSTI)

      Gangineni, R. B.; Negulescu, B.; Baraduc, C.; Gaudin, G.

      2014-05-05

      Spin filtering effects in nano-pillars of Fe-MgO-Fe single crystalline magnetic tunnel junctions are explored with two different sample architectures and thin MgO barriers (thickness: 3–8 monolayers). The two architectures, with different growth and annealing conditions of the bottom electrode, allow tuning the quality of the bottom Fe/MgO interface. As a result, an interfacial resonance states (IRS) is observed or not depending on this interface quality. The IRS contribution, observed by spin polarized tunnel spectroscopy, is analyzed as a function of the MgO barrier thickness. Our experimental findings agree with theoretical predictions concerning the symmetry of the low energy (0.2 eV) interfacial resonance states: a mixture of Δ{sub 1}-like and Δ{sub 5}-like symmetries.

    9. Controllable 0 − π transition in iron pnictide superconductor junctions with a spacer of strong ferromagnet

      SciTech Connect (OSTI)

      Liu, S. Y.; Tao, Y. C. Ji, T. T.; Di, Y. S.; Hu, J. G.

      2014-03-17

      We investigate the control of 0−π transition in Josephson junctions consisting of a highly spin-polarized ferromagnet coupled to two iron pnictide superconductors (SCs). It is shown that, a 0−π transition as a function of interband coupling strength is always exhibited, which can be experimentally used to discriminate the s{sub ±}-wave pairing symmetry in the iron pnictide SCs from the s{sub ++}-wave one in MgB{sub 2}. By tuning the doping level in the s{sub ±}-wave SCs, one can vary the interband coupling strength so as to obtain the controllable 0−π transition. This device may be realized with current technologies and has practical use in Cooper pair spintronics and quantum information.

    10. Giant electrocaloric effect in asymmetric ferroelectric tunnel junctions at room temperature

      SciTech Connect (OSTI)

      Liu, Yang Infante, Ingrid C.; Dkhil, Brahim; Lou, Xiaojie

      2014-02-24

      Room-temperature electrocaloric properties of Pt/BaTiO{sub 3}/SrRuO{sub 3} ferroelectric tunnel junctions (FTJs) are studied by using a multiscale thermodynamic model. It is found that there is a divergence in the adiabatic temperature change ΔT for the two opposite polarization orientations. This difference under a typical writing voltage of 3 V can reach over 1 K as the barrier thickness decreases. Thanks to the ultrahigh external stimulus, a giant electrocaloric effect (1.53 K/V) with ΔT being over 4.5 K can be achieved at room temperature, which demonstrates the perspective of FTJs as a promising solid-state refrigeration.

    11. Optimization of exchange bias in Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler alloy layers

      SciTech Connect (OSTI)

      Hirohata, Atsufumi; Izumida, Keisuke; Ishizawa, Satoshi; Nakayama, Tadachika; Sagar, James

      2014-05-07

      We have fabricated and investigated IrMn{sub 3}/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} stacks to meet the criteria for future spintronic device applications which requires low-temperature crystallisation (<250 °C) and a large exchange bias H{sub ex} (>500 Oe). Such a system would form the pinned layer in spin-valve or tunnel junction applications. We have demonstrated that annealing at 300 °C which can achieve crystalline ordering in the Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} layer giving ∼80% of the predicted saturation magnetisation. We have also induced an exchange bias of ∼240 Oe at the interface. These values are close to the above criteria and confirm the potential of using antiferromagnet/Heusler-alloy stacks in current Si-based processes.

    12. Determining resistivity of a formation adjacent to a borehole having casing by generating constant current flow in portion of casing and using at least two voltage measurement electrodes

      DOE Patents [OSTI]

      Vail, III, William Banning

      2000-01-01

      Methods of operation of different types of multiple electrode apparatus vertically disposed in a cased well to measure information related to the resistivity of adjacent geological formations from within the cased well are described. The multiple electrode apparatus has a minimum of two spaced apart voltage measurement electrodes that electrically engage a first portion of the interior of the cased well and that provide at least first voltage information. Current control means are used to control the magnitude of any selected current that flows along a second portion of the interior of the casing to be equal to a predetermined selected constant. The first portion of the interior of the cased well is spaced apart from the second portion of the interior of the cased well. The first voltage information and the predetermined selected constant value of any selected current flowing along the casing are used in part to determine a magnitude related to the formation resistivity adjacent to the first portion of the interior of the cased well. Methods and apparatus having a plurality of voltage measurement electrodes are disclosed that provide voltage related information in the presence of constant currents flowing along the casing which is used to provide formation resistivity.

    13. Method for forming a barrier layer

      DOE Patents [OSTI]

      Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palo Alto, CA)

      2002-01-01

      Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

    14. Superconductive articles including cerium oxide layer

      DOE Patents [OSTI]

      Wu, X.D.; Muenchausen, R.E.

      1993-11-16

      A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure. 7 figures.

    15. Strained layer Fabry-Perot device

      DOE Patents [OSTI]

      Brennan, Thomas M.; Fritz, Ian J.; Hammons, Burrell E.

      1994-01-01

      An asymmetric Fabry-Perot reflectance modulator (AFPM) consists of an active region between top and bottom mirrors, the bottom mirror being affixed to a substrate by a buffer layer. The active region comprises a strained-layer region having a bandgap and thickness chosen for resonance at the Fabry-Perot frequency. The mirrors are lattice matched to the active region, and the buffer layer is lattice matched to the mirror at the interface. The device operates at wavelengths of commercially available semiconductor lasers.

    16. Multijunction photovoltaic device and method of manufacture

      DOE Patents [OSTI]

      Arya, Rejeewa R.; Catalano, Anthony W.; Bennett, Murray

      1995-04-04

      A multijunction photovoltaic device includes first, second, and third amorphous silicon p-i-n photovoltaic cells in a stacked arrangement. The intrinsic layers of the second and third cells are formed of a-SiGe alloys with differing ratios of Ge such that the bandgap of the intrinsic layers respectively decrease from the first uppermost cell to the third lowermost cell. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one of the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers.

    17. SU-E-T-426: Dose Delivery Accuracy in Breast Field Junction for Free Breath and Deep Inspiration Breath Hold Techniques

      SciTech Connect (OSTI)

      Epstein, D; Shekel, E; Levin, D

      2014-06-01

      Purpose: The purpose of this work was to verify the accuracy of the dose distribution along the field junction in a half beam irradiation technique for breast cancer patients receiving radiation to the breast or chest wall (CW) and the supraclavicular LN region for both free breathing and deep inspiration breath hold (DIBH) technique. Methods: We performed in vivo measurements for nine breast cancer patients receiving radiation to the breast/CW and to the supraclavicular LN region. Six patients were treated to the left breast/CW using DIBH technique and three patients were treated to the right breast/CW in free breath. We used five microMOSFET dosimeters: three located along the field junction, one located 1 cm above the junction and the fifth microMOSFET located 1 cm below the junction. We performed consecutive measurements over several days for each patient and compared the measurements to the TPS calculation (Eclipse, Varian). Results: The calculated and measured doses along the junction were 0.970.08 Gy and 1.020.14 Gy, respectively. Above the junction calculated and measured doses were 0.910.08 Gy and 0.980.09 Gy respectively, and below the junction calculated and measured doses were 1.700.15 Gy and 1.610.09 Gy, respectively. All differences were not statistically significant. When comparing calculated and measured doses for DIBH patients only, there was still no statistically significant difference between values for all dosimeter locations. Analysis was done using the Mann-Whitney Rank-Sum Test. Conclusion: We found excellent correlation between calculated doses from the TPS and measured skin doses at the junction of several half beam fields. Even for the DIBH technique, where there is more potential for variance due to depth of breath, there is no over or underdose along the field junction. This correlation validates the TPS, as well an accurate, reproducible patient setup.

    18. Cryogenic target system for hydrogen layering

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Parham, T.; Kozioziemski, B.; Atkinson, D.; Baisden, P.; Bertolini, L.; Boehm, K; Chernov, A.; Coffee, K.; Coffield, F.; Dylla-Spears, R.; et al

      2015-11-24

      Here, a cryogenic target positioning system was designed and installed on the National Ignition Facility (NIF) target chamber. This instrument incorporates the ability to fill, form, and characterize the NIF targets with hydrogen isotopes needed for ignition experiments inside the NIF target bay then transport and position them in the target chamber. This effort brought to fruition years of research in growing and metrologizing high-quality hydrogen fuel layers and landed it in an especially demanding operations environment in the NIF facility. D-T (deuterium-tritium) layers for NIF ignition experiments have extremely tight specifications and must be grown in a very highlymore » constrained environment: a NIF ignition target inside a cryogenic target positioner inside the NIF target bay. Exquisite control of temperature, pressure, contaminant level, and thermal uniformity are necessary throughout seed formation and layer growth to create an essentially-groove-free single crystal layer.« less

    19. Layered solid sorbents for carbon dioxide capture

      DOE Patents [OSTI]

      Li, Bingyun; Jiang, Bingbing; Gray, McMahan L; Fauth, Daniel J; Pennline, Henry W; Richards, George A

      2014-11-18

      A solid sorbent for the capture and the transport of carbon dioxide gas is provided having at least one first layer of a positively charged material that is polyethylenimine or poly(allylamine hydrochloride), that captures at least a portion of the gas, and at least one second layer of a negatively charged material that is polystyrenesulfonate or poly(acryclic acid), that transports the gas, wherein the second layer of material is in juxtaposition to, attached to, or crosslinked with the first layer for forming at least one bilayer, and a solid substrate support having a porous surface, wherein one or more of the bilayers is/are deposited on the surface of and/or within the solid substrate. A method of preparing and using the solid sorbent is provided.

    20. Counting molecular-beam grown graphene layers

      SciTech Connect (OSTI)

      Plaut, Annette S.; Wurstbauer, Ulrich; Pinczuk, Aron; Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 ; Garcia, Jorge M.; Pfeiffer, Loren N.

      2013-06-17

      We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

    1. Cermet layer for amorphous silicon solar cells

      DOE Patents [OSTI]

      Hanak, Joseph J.

      1979-01-01

      A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.

    2. Multi-layer waste containment barrier

      DOE Patents [OSTI]

      Smith, Ann Marie; Gardner, Bradley M.; Nickelson, David F.

      1999-01-01

      An apparatus for constructing an underground containment barrier for containing an in-situ portion of earth. The apparatus includes an excavating device for simultaneously (i) excavating earthen material from beside the in-situ portion of earth without removing the in-situ portion and thereby forming an open side trench defined by opposing earthen sidewalls, and (ii) excavating earthen material from beneath the in-situ portion of earth without removing the in-situ portion and thereby forming a generally horizontal underground trench beneath the in-situ portion defined by opposing earthen sidewalls. The apparatus further includes a barrier-forming device attached to the excavating device for simultaneously forming a side barrier within the open trench and a generally horizontal, multi-layer barrier within the generally horizontal trench. The multi-layer barrier includes at least a first layer and a second layer.

    3. Optical devices featuring nonpolar textured semiconductor layers

      DOE Patents [OSTI]

      Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

      2013-11-26

      A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

    4. Optical devices featuring textured semiconductor layers

      DOE Patents [OSTI]

      Moustakas, Theodore D.; Cabalu, Jasper S.

      2011-10-11

      A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

    5. Optical devices featuring textured semiconductor layers

      DOE Patents [OSTI]

      Moustakas, Theodore D.; Cabalu, Jasper S.

      2012-08-07

      A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

    6. Method of depositing epitaxial layers on a substrate

      SciTech Connect (OSTI)

      Goyal, Amit

      2003-12-30

      An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

    7. Electrical isolation of component cells in monolithically interconnected modules

      DOE Patents [OSTI]

      Wanlass, Mark W.

      2001-01-01

      A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.

    8. Selective layer disordering in III-nitrides with a capping layer

      DOE Patents [OSTI]

      Wierer, Jr., Jonathan J.; Allerman, Andrew A.

      2016-06-14

      Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

    9. Final Assessment: U.S. Virgin Islands Industrial Development Park and Adjacent Facilities Energy-Efficiency and Micro-Grid Infrastructure

      SciTech Connect (OSTI)

      Petersen, Joseph M.; Boyd, Paul A.; Dahowski, Robert T.; Parker, Graham B.

      2015-12-31

      The purpose of this assessment was to undertake an assessment and analysis of cost-effective options for energy-efficiency improvements and the deployment of a micro-grid to increase the energy resilience at the U.S. Virgin Islands Industrial Development Park (IDP) and adjacent facilities in St. Croix, Virgin Islands. The Economic Development Authority sought assistance from the U.S. Department of Energy to undertake this assessment undertaken by Pacific Northwest National Laboratory. The assessment included 18 buildings plus the perimeter security lighting at the Virgin Islands Bureau of Correctional Facility, four buildings plus exterior lighting at the IDP, and five buildings (one of which is to be constructed) at the Virgin Islands Police Department for a total of 27 buildings with a total of nearly 323,000 square feet.

    10. Determining resistivity of a formation adjacent to a borehole having casing with an apparatus having all current conducting electrodes within the cased well

      DOE Patents [OSTI]

      Vail, III, William Banning

      2001-01-01

      Methods of operation of different types of multiple electrode apparatus vertically disposed in a cased well to measure information useful to determine the resistivity of adjacent geological formations from within the cased well are described. The multiple electrode apparatus has a plurality of spaced apart voltage measurement electrodes that electrically engage a portion of the interior of the cased well. During measurements of information useful to determine formation resistivity, current is conducted between a first current conducting electrode in electrical contact with the interior of the cased well to a second current conducting electrode that is also in electrical contact with the interior of the cased well. The first and second current conducting electrodes are separated by a distance sufficient so that at least a portion of the current conducted between the first and second current conducting electrodes is conducted through the geological formation of interest.

    11. Thermoelectric generator with hinged assembly for fins

      DOE Patents [OSTI]

      Purdy, David L.; Shapiro, Zalman M.; Hursen, Thomas F.; Maurer, Gerould W.

      1976-11-02

      A cylindrical casing has a central shielded capsule of radioisotope fuel. A plurality of thermonuclear modules are axially arranged with their hot junctions resiliently pressed toward the shield and with their cold junctions adjacent a transition member having fins radiating heat to the environment. For each module, the assembly of transition member and fins is hinged to the casing for swinging to permit access to and removal of such module. A ceramic plate having gold layers on opposite faces prevents diffusion bonding of the hot junction to the shield.

    12. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

      SciTech Connect (OSTI)

      Wu, Wei Cao, Yanyan; Caspar, Jonathan V.; Guo, Qijie; Johnson, Lynda K.; Mclean, Robert S.; Malajovich, Irina; Choudhury, Kaushik Roy

      2014-07-28

      We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

    13. Tip-contact related low-bias negative differential resistance and rectifying effects in benzeneporphyrinbenzene molecular junctions

      SciTech Connect (OSTI)

      Cheng, Jue-Fei; Zhou, Liping E-mail: leigao@suda.edu.cn; Liu, Man; Yan, Qiang; Han, Qin; Gao, Lei E-mail: leigao@suda.edu.cn

      2014-11-07

      The electronic transport properties of benzeneporphyrinbenzene (BPB) molecules coupled to gold (Au) electrodes were investigated. By successively removing the front-end Au atoms, several BPB junctions with different molecule-electrode contact symmetries were constructed. The calculated currentvoltage (IV) curves depended strongly on the contact configurations between the BPB molecules and the Au electrodes. In particular, a significant low-voltage negative differential resistance effect appeared at ?0.3 V in the junctions with pyramidal electrodes on both sides. Along with the breaking of this tip-contact symmetry, the low-bias negative differential resistance effect gradually disappeared. This tip-contact may be ideal for use in the design of future molecular devices because of its similarity with experimental processes.

    14. Communication: Electronic and transport properties of molecular junctions under a finite bias: A dual mean field approach

      SciTech Connect (OSTI)

      Liu, Shuanglong; Feng, Yuan Ping; Zhang, Chun; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543

      2013-11-21

      We show that when a molecular junction is under an external bias, its properties cannot be uniquely determined by the total electron density in the same manner as the density functional theory for ground state properties. In order to correctly incorporate bias-induced nonequilibrium effects, we present a dual mean field (DMF) approach. The key idea is that the total electron density together with the density of current-carrying electrons are sufficient to determine the properties of the system. Two mean fields, one for current-carrying electrons and the other one for equilibrium electrons can then be derived. Calculations for a graphene nanoribbon junction show that compared with the commonly used ab initio transport theory, the DMF approach could significantly reduce the electric current at low biases due to the non-equilibrium corrections to the mean field potential in the scattering region.

    15. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

      SciTech Connect (OSTI)

      Wu, Y.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q.; Hasan, T.

      2015-02-02

      We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5?nm. The dominant emission, detectable at ultralow (<1??A) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25??A current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter?junction-based UV-LEDs.

    16. Building America Technology Solutions for New and Existing Homes: New Insights for Improving the Designs of Flexible Duct Junction Boxes (Fact Sheet)

      Broader source: Energy.gov [DOE]

      IBACOS explored the relationships between pressure and physical configurations of flexible duct junction boxes by using computational fluid dynamics simulations to predict individual box parameters and total system pressure, thereby ensuring improved HVAC performance.

    17. Comments and responses on the Remedial Action Plan and site design for stabilization of the Inactive Uranium Mill Tailings Site, Grand Junction, Colorado. Revision 1

      SciTech Connect (OSTI)

      1994-01-01

      This report contains information concerning public comments and responses on the remedial action plan and site design for stabilization of the inactive uranium mill tailings site in Grand Junction, Colorado.

    18. Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

      SciTech Connect (OSTI)

      Qiu, Weicheng; Hu, Weida Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei; Cheng, Xiang'ai Wang, Rui

      2014-11-10

      In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

    19. X-ray Crystallographic Observation of 'In-line' and 'Adjacent' Conformations in a Bulged Self-Cleaving RNA/DNA Hybrid

      SciTech Connect (OSTI)

      Tereshko, V.; Wallace, S.T.; Usman, N.; Wincott, F.; Egli, M.

      2010-03-08

      The RNA strand in an RNA/DNA duplex with unpaired ribonucleotides can undergo self-cleavage at bulge sites in the presence of a variety of divalent metal ions (Husken et al., Biochemistry, 1996, 35:16591-16600). Transesterification proceeds via an in-line mechanism, with the 2'-OH of the bulged nucleotide attacking the 3'-adjacent phosphate group. The site-specificity of the reaction is most likely a consequence of the greater local conformational freedom of the RNA backbone in the bulge region. A standard A-form backbone geometry prohibits formation of an in-line arrangement between 2'-oxygen and phosphate. However, the backbone in the region of an unpaired nucleotide appears to be conducive to an in-line approach. Therefore, the bulge-mediated phosphoryl transfer reaction represents one of the simplest RNA self-cleavage systems. Here we focus on the conformational features of the RNA that underlie site-specific cleavage. The structures of an RNA/DNA duplex with single ribo-adenosyl bulges were analyzed in two crystal forms, permitting observation of 10 individual conformations of the RNA bulge moiety. The bulge geometries cover a range of relative arrangements between the 2'-oxygen of the bulged nucleotide and the P-O5' bond (including adjacent and near in-line ) and give a detailed picture of the conformational changes necessary to line up the 2'-OH nucleophile and scissile bond. Although metal ions are of crucial importance in the catalysis of analogous cleavage reactions by ribozymes, it is clear that local strain or conformational flexibility in the RNA also affect cleavage selectivity and rate (Soukup & Breaker, RNA, 1999, 5:1308-1325). The geometries of the RNA bulges frozen out in the crystals provide snapshots along the reaction pathway prior to the transition state of the phosphoryl transfer reaction.

    20. Superconducting transport in single and parallel double InAs quantum dot Josephson junctions with Nb-based superconducting electrodes

      SciTech Connect (OSTI)

      Baba, Shoji Sailer, Juergen; Deacon, Russell S.; Oiwa, Akira; Shibata, Kenji; Hirakawa, Kazuhiko; Tarucha, Seigo

      2015-11-30

      We report conductance and supercurrent measurements for InAs single and parallel double quantum dot Josephson junctions contacted with Nb or NbTiN superconducting electrodes. Large superconducting gap energy, high critical field, and large switching current are observed, all reflecting the features of Nb-based electrodes. For the parallel double dots, we observe an enhanced supercurrent when both dots are on resonance, which may reflect split Cooper pair tunneling.