National Library of Energy BETA

Sample records for junction adjacent layers

  1. Semiconductor tunnel junction with enhancement layer

    DOE Patents [OSTI]

    Klem, John F. (Sandia Park, NM); Zolper, John C. (Albuquerque, NM)

    1997-01-01

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

  2. Semiconductor tunnel junction with enhancement layer

    DOE Patents [OSTI]

    Klem, J.F.; Zolper, J.C.

    1997-10-21

    The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.

  3. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    DOE Patents [OSTI]

    Chang, Y. Austin (Middleton, WI); Yang, Jianhua Joshua (Madison, WI)

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  4. Methods for the fabrication of thermally stable magnetic tunnel junctions

    DOE Patents [OSTI]

    Chang, Y. Austin (Middleton, WI); Yang, Jianhua J. (Madison, WI); Ladwig, Peter F. (Hutchinson, MN)

    2009-08-25

    Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.

  5. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    SciTech Connect (OSTI)

    Honjo, H. Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T.; Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N.; Ishihara, K.; Ohno, H.

    2014-05-07

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8?mA, respectively.

  6. Nanotube junctions

    DOE Patents [OSTI]

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon; Zettl, Alexander Karlwalte

    2004-12-28

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  7. Nanotube junctions

    DOE Patents [OSTI]

    Crespi, Vincent Henry (Darien, IL); Cohen, Marvin Lou (Berkeley, CA); Louie, Steven Gwon Sheng (Berkeley, CA); Zettl, Alexander Karlwalter (Kensington, CA)

    2003-01-01

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  8. TRIPLE-JUNCTION A-SI SOLAR CELLS WITH HEAVILY DOPED THIN INTERFACE LAYERS AT THE TUNNEL W. Wang, H. Povolny, W. Du, X.B. Liao and X. Deng

    E-Print Network [OSTI]

    Deng, Xunming

    TRIPLE-JUNCTION A-SI SOLAR CELLS WITH HEAVILY DOPED THIN INTERFACE LAYERS AT THE TUNNEL JUNCTIONS W of Toledo, Toledo, OH 43606 USA ABSTRACT Triple-junction a-Si based solar cells, having a structure of SS cells and between the middle and bottom component cells on the efficiency of triple- junction solar

  9. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    SciTech Connect (OSTI)

    Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ?1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  10. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

    E-Print Network [OSTI]

    Fong, David Michael

    2012-01-01

    Application in High Efficiency Multi-Junction Solar Cells AApplication in High Efficiency Multi-Junction Solar Cells Bycost of high efficiency multi-junction solar cells through a

  11. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

    E-Print Network [OSTI]

    Fong, David Michael

    2012-01-01

    Efficiency Multi-Junction Solar Cells A thesis submitted inHigh Efficiency Multi-Junction Solar Cells By David Michaelsubstrate costs of multi-junction solar cells by recycling

  12. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

    E-Print Network [OSTI]

    Fong, David Michael

    2012-01-01

    technique for LM triple junction solar cell grown on porousAnother common triple-junction solar cell utilizes a GaAstechnique for LM triple junction solar cell grown on porous

  13. Triple-Junction a-Si Solar Cells Deposited With Improved Intrinsic Layers X. Deng, W. Wang, X.B. Liao, S. Han, H. Povolny, X.B. Xiang, and W. Du

    E-Print Network [OSTI]

    Deng, Xunming

    Triple-Junction a-Si Solar Cells Deposited With Improved Intrinsic Layers X. Deng, W. Wang, X of Toledo, Toledo, OH 43606 ABSTRACT Triple-junction a-Si/a-SiGe/a-SiGe solar cells are fabricated in our-efficiency triple-junction solar cells. The general approach and experimental details were described in an earlier

  14. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

    E-Print Network [OSTI]

    Fong, David Michael

    2012-01-01

    Motivation Multi-junction (MJ) solar cells show particular promise as a future clean renewable energy

  15. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    SciTech Connect (OSTI)

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Zhang, Yong-Hang; Landini, Barbara; Campman, Ken

    2014-05-28

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300?nm thick GaAs absorber, combined with a 5??m thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00?V, short-circuit current densities (J{sub sc}) up to 24.5?mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6?mA/cm{sup 2} and 20.7%, respectively.

  16. Tuning the thickness of electrochemically grafted layers in large area molecular junctions

    SciTech Connect (OSTI)

    Fluteau, T.; Bessis, C.; Barraud, C. Della Rocca, M. L.; Lafarge, P.; Martin, P.; Lacroix, J.-C.

    2014-09-21

    We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2–27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

  17. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

    E-Print Network [OSTI]

    Fong, David Michael

    2012-01-01

    III! V Multijunction Solar Cells,” (2003). J. F. Geisz, etEfficiency Multi-Junction Solar Cells A thesis submitted inEfficiency Multi-Junction Solar Cells By David Michael Fong

  18. Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film

    SciTech Connect (OSTI)

    Takenaga, Takashi, E-mail: takenaga@leap.or.jp; Tsuzaki, Yosuke; Yoshida, Chikako; Yamazaki, Yuichi; Hatada, Akiyoshi; Nakabayashi, Masaaki; Iba, Yoshihisa; Takahashi, Atsushi; Noshiro, Hideyuki; Tsunoda, Koji; Aoki, Masaki; Furukawa, Taisuke; Fukumoto, Hiroshi; Sugii, Toshihiro [Low-power Electronics Association and Project (LEAP), Tsukuba 305-8569 (Japan)

    2014-05-07

    We evaluated MgO-based magnetic tunnel junctions (MTJs) for magnetic field sensors with spin-valve-type structures in the CoFeB sensing layer capped by an MgO film in order to obtain both top and bottom interfaces of MgO/CoFeB exhibiting interfacial perpendicular magnetic anisotropy (PMA). Hysteresis of the CoFeB sensing layer in these MTJs annealed at 275?°C was suppressed at a thickness of the sensing layer below 1.2?nm by interfacial PMA. We confirmed that the CoFeB sensing layers capped with MgO suppress the thickness dependences of both the magnetoresistance ratio and the magnetic behaviors of the CoFeB sensing layer more than that of the MTJ with a Ta capping layer. MgO-based MTJs with MgO capping layers can improve the controllability of the characteristics for magnetic field sensors.

  19. Josephson Junctions with Tunnel Barriers Grown Via In Situ Atomic Layer Deposition

    E-Print Network [OSTI]

    Elliot, Alan Jesson

    2014-12-31

    in the thermally oxidized tunnel barrier. In order to realize the full potential of JJ qubits, an alternative method to thermal oxidation must be found for tunnel barrier growth. This work explores using atomic layer deposition (ALD) for the growth of ultrathin...

  20. Broadband and omnidirectional anti-reflection layer for III/V multi-junction solar cells

    E-Print Network [OSTI]

    Diedenhofen, Silke L; Haverkamp, Erik; Bauhuis, Gerard; Schermer, John; Rivas, Jaime Gómez; 10.1016/j.solmat.2012.02.022

    2012-01-01

    We report a novel graded refractive index antireflection coating for III/V quadruple solar cells based on bottom-up grown tapered GaP nanowires. We have calculated the photocurrent density of an InGaP-GaAs-InGaAsP-InGaAs solar cell with a MgF2/ZnS double layer antireflection coating and with a graded refractive index coating. The photocurrent density can be increased by 5.9 % when the solar cell is coated with a graded refractive index layer with a thickness of 1\\mu m. We propose to realize such a graded refractive index layer by growing tapered GaP nanowires on III/V solar cells. For a first demonstration of the feasibility of the growth of tapered nanowires on III/V solar cells, we have grown tapered GaP nanowires on AlInP/GaAs substrates. We show experimentally that the reflection from the nanowire coated substrate is reduced and that the transmission into the substrate is increased for a broad spectral and angular range.

  1. Current-induced switching of magnetic tunnel junctions: Effects of field-like spin-transfer torque, pinned-layer magnetization orientation, and temperature

    SciTech Connect (OSTI)

    Tiwari, R. K.; Jhon, M. H.; Ng, N.; Gan, C. K., E-mail: ganck@ihpc.a-star.edu.sg [Institute of High Performance Computing, Agency for Science, Technology and Research, 1 Fusionopolis Way, 16-16 Connexis, Singapore 138632 (Singapore); Srolovitz, D. J. [Department of Materials Science, Engineering, Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2014-01-13

    We study current-induced switching in magnetic tunnel junctions in the presence of a field-like spin-transfer torque and titled pinned-layer magnetization in the high current limit at finite temperature. We consider both the Slonczewski and field-like torques with coefficients a{sub J} and b{sub J}, respectively. At finite temperatures, ?=b{sub J}/a{sub J}=±1 leads to a smaller mean switching time compared that with ?=0. The reduction of switching time in the presence of the field-like term is due to the alignment effect (for ?>0) and the initial torque effect.

  2. Josephson junction

    DOE Patents [OSTI]

    Wendt, J.R.; Plut, T.A.; Martens, J.S.

    1995-05-02

    A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material. 10 figs.

  3. Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

    SciTech Connect (OSTI)

    Atwater, H. A.

    2008-11-01

    We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

  4. High voltage series connected tandem junction solar battery

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  5. Multi-junction solar cell device

    DOE Patents [OSTI]

    Friedman, Daniel J. (Lakewood, CO); Geisz, John F. (Wheat Ridge, CO)

    2007-12-18

    A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

  6. Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based magnetic tunneling junctions

    SciTech Connect (OSTI)

    Chae, Kyo-Suk; Park, Jea-Gun

    2015-04-21

    For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4?nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer. Thus, the TMR ratio peaked at t{sub Fe}?=?0.4?nm: i.e., 120% at 29???m{sup 2}.

  7. Characterization of the natural barriers of intergranular tunnel junctions: Cr2O3 surface layers on CrO2 nanoparticles

    E-Print Network [OSTI]

    Diebold, Ulrike

    thin native oxide layer with a thickness of 1­3 nm on the surface of CrO2 powders has been observed direct observation by TEM of a 1­3 nm thick native oxide layer on the surface of the CrO2 single crystal

  8. Tandem junction amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  9. Complementary junction heterostructure field-effect transistor

    DOE Patents [OSTI]

    Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

    1995-12-26

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

  10. Complementary junction heterostructure field-effect transistor

    DOE Patents [OSTI]

    Baca, Albert G. (Albuquerque, NM); Drummond, Timothy J. (Albuquerque, NM); Robertson, Perry J. (Albuquerque, NM); Zipperian, Thomas E. (Albuquerque, NM)

    1995-01-01

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

  11. Method for shallow junction formation

    DOE Patents [OSTI]

    Weiner, K.H.

    1996-10-29

    A doping sequence is disclosed that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated. 8 figs.

  12. Three-junction solar cell

    DOE Patents [OSTI]

    Ludowise, Michael J. (Cupertino, CA)

    1986-01-01

    A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

  13. Low temperature junction growth using hot-wire chemical vapor deposition

    DOE Patents [OSTI]

    Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

    2014-02-04

    A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

  14. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  15. ABUNDANCE AND ULTRASTRUCTURAL DIVERSITY OF NEURONAL GAP JUNCTIONS IN THE OFF AND ON SUBLAMINAE OF THE

    E-Print Network [OSTI]

    Rash, John E.

    retina. In the inner plexiform layer (IPL), ultrastructurally-identified gap junctions were reported primarily in the functionally-defined and anatomically-distinct ON sublamina, with few reported in the OFF an- alyze the morphologies and distributions of neuronal gap junctions in the IPL of adult rat

  16. Leakage Current and Dopant Activation Characterization of SDE/Halo CMOS Junctions with

    E-Print Network [OSTI]

    Schroder, Dieter K.

    by trap assisted and band-to-band tunneling. The reduced thermal budget of IRTP allows junction formation is described by high electron and hole recombination-generation in the end-of-range (EOR) damage layer enhanced/cm^) for high sub-junction doping due to band-to- band and trap-assisted tunnehng [1,2,3] compromises

  17. A market analysis for high efficiency multi-junction solar cells grown on SiGe

    E-Print Network [OSTI]

    Judkins, Zachara Steele

    2007-01-01

    Applications, markets and a cost model are presented for III-V multi-junction solar cells built on compositionally graded SiGe buffer layers currently being developed by professors Steven Ringell of Ohio State University ...

  18. Influence of topography and Co domain walls on the magnetization reversal of the FeNi layer in FeNi/Al2O3/Co magnetic tunnel junctions

    E-Print Network [OSTI]

    Kuch, Wolfgang

    Influence of topography and Co domain walls on the magnetization reversal of the FeNi layer in Fe situated on and situated be- tween steps is large. To test the influence of the topography microscopic view of the influence of the substrate-induced layer topography on the magnetization reversal

  19. Highly Charged Ion (HCI) Modified Tunnel Junctions

    SciTech Connect (OSTI)

    Pomeroy, J. M.; Grube, H. [Atomic Physics Division, National Institute of Standards and Technology (NIST) 100 Bureau Dr., MS 8423, Gaithersburg, MD 20899-8423 (United States)

    2009-03-10

    The neutralization energy carried by highly charged ions (HCIs) provides an alternative method for localizing energy on a target's surface, producing features and modifying surfaces with fluences and kinetic energy damage that are negligible compared to singly ionized atoms. Since each HCI can deposit an enormous amount of energy into a small volume of the surface (e.g., Xe{sup 44+} delivers 51 keV of neutralization energy per HCI), each individual HCI's interaction with the target can produce a nanoscale feature. Many studies of HCI-surface features have characterized some basic principles of this unique ion-surface interaction, but the activity reported here has been focused on studying ensembles of HCI features in ultra-thin insulating films by fabricating multi-layer tunnel junction devices. The ultra-thin insulating barriers allow current to flow by tunneling, providing a very sensitive means of detecting changes in the barrier due to highly charged ion irradiation and, conversely, HCI modification provides a method of finely tuning the transparency of the tunnel junctions that spans several orders of magnitude for devices produced from a single process recipe. Systematic variation of junction bias, temperature, magnetic field and other parameters provides determination of the transport mechanism, defect densities, and magnetic properties of these nano-features and this novel approach to device fabrication.

  20. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    DOE Patents [OSTI]

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  1. Tandem colloidal quantum dot solar cells employing a graded recombination layer

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    -based photodetectors1­5 and photovoltaic6­12 devices to be tailored. Multi-junction solar cells made from a combi- bandgap single-junction solar cells. In principle it also allows tandem and multi-junction cellsTandem colloidal quantum dot solar cells employing a graded recombination layer Xihua Wang1 , Ghada

  2. Measurements and Predictions of the Heat Transfer at the Tube-Fin Junction for Louvered Fin Heat Exchangers

    E-Print Network [OSTI]

    Thole, Karen A.

    Measurements and Predictions of the Heat Transfer at the Tube-Fin Junction for Louvered Fin Heat Transfer at the Tube-Fin Junction for Louvered Fin Heat Exchangers Abstract The dominant thermal resistance used to increase heat transfer by initiating new boundary layer growth and increasing surface area

  3. Josephson junction Q-spoiler

    DOE Patents [OSTI]

    Clarke, J.; Hilbert, C.; Hahn, E.L.; Sleator, T.

    1986-03-25

    An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

  4. Josephson junction Q-spoiler

    DOE Patents [OSTI]

    Clarke, John (Berkeley, CA); Hilbert, Claude (Austin, TX); Hahn, Erwin L. (Berkeley, CA); Sleator, Tycho (Berkeley, CA)

    1988-01-01

    An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

  5. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-01-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  6. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  7. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming (Syvania, OH)

    2010-02-23

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  8. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming (Syvania, OH); Liao, Xianbo (Toledo, OH); Du, Wenhui (Toledo, OH)

    2011-10-04

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  9. Hybrid window layer for photovoltaic cells

    DOE Patents [OSTI]

    Deng, Xunming (Sylvania, OH); Liao, Xianbo (Toledo, OH); Du, Wenhui (Toledo, OH)

    2011-02-01

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  10. Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

    SciTech Connect (OSTI)

    Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.; Fringer, Oliver B.; Monismith, Stephen G.

    2014-12-17

    In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Doppler Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.

  11. Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.; Fringer, Oliver B.; Monismith, Stephen G.

    2014-12-17

    In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Dopplermore »Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.« less

  12. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOE Patents [OSTI]

    Wu, Xuanzhi (Golden, CO); Sheldon, Peter (Lakewood, CO); Coutts, Timothy J. (Lakewood, CO)

    2001-01-01

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  13. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes R. (El Paso, TX)

    1996-03-26

    A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

  14. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw (Kensington, CA); Yu, Kin Man (Lafayette, CA)

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  15. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  16. The Junction Diode Basic Operation

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    biased diode. Figure 1(b) shows the diode with a battery connected across it. The polarity of the battery in the p-type side away from the junction. No current can flow. The diode is said to be reverse biased. Figure 1(c) shows the diode with the battery polarity reversed. The battery now tends to cancel out

  17. Irreversible Electroporation Adjacent to the Rectum: Evaluation of Pathological Effects in a Pig Model

    SciTech Connect (OSTI)

    Schoellnast, Helmut [Memorial Sloan-Kettering Cancer Center, Department of Radiology (United States)] [Memorial Sloan-Kettering Cancer Center, Department of Radiology (United States); Monette, Sebastien [Memorial Sloan-Kettering Cancer Center, Weill Cornell Medical College, Rockefeller University, Laboratory of Comparative Pathology (United States)] [Memorial Sloan-Kettering Cancer Center, Weill Cornell Medical College, Rockefeller University, Laboratory of Comparative Pathology (United States); Ezell, Paula C. [Memorial Sloan-Kettering Cancer Center, Weill Cornell Medical College, Rockefeller University, Research Animal Resource Center (United States)] [Memorial Sloan-Kettering Cancer Center, Weill Cornell Medical College, Rockefeller University, Research Animal Resource Center (United States); Single, Gordon [AngioDynamics Inc. (United States)] [AngioDynamics Inc. (United States); Maybody, Majid [Memorial Sloan-Kettering Cancer Center, Department of Radiology (United States)] [Memorial Sloan-Kettering Cancer Center, Department of Radiology (United States); Weiser, Martin R.; Fong Yuman [Memorial Sloan-Kettering Cancer Center, Department of Surgery (United States)] [Memorial Sloan-Kettering Cancer Center, Department of Surgery (United States); Solomon, Stephen B., E-mail: solomons@mskcc.org [Memorial Sloan-Kettering Cancer Center, Department of Radiology (United States)

    2013-02-15

    To evaluate the effects of irreversible electroporation (IRE) on the rectum wall after IRE applied adjacent to the rectum. CT-guided IRE adjacent to the rectum wall was performed in 11 pigs; a total of 44 lesions were created. In five pigs, ablations were performed without a water-filled endorectal coil (group A); in six pigs, ablation was performed with the coil to avoid displacement of the rectum wall (group B). The pigs were killed after 7-15 days and the rectums were harvested for pathological evaluation. There was no evidence of perforation on gross postmortem examination. Perirectal muscle lesions were observed in 18 of 20 ablations in group A and in 21 of 24 ablations in group B. Inflammation and fibrosis of the muscularis propria was observed in ten of 18 lesions in group A and in ten of 21 lesions in group B. In group A, findings were limited to the external layer of the muscularis propria except for one lesion; in group B, findings were transmural in all cases. Transmural necrosis with marked suppurative mucosal inflammation was observed in seven of 21 lesions in group B and in no lesion in group A. IRE-ablation adjacent to the rectum may be uneventful if the rectum wall is mobile and able to contract. IRE-ablation of the rectum may be harmful if the rectum wall is fixed adjacent to the IRE-probe.

  18. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOE Patents [OSTI]

    Toet, Daniel; Sigmon, Thomas W.

    2004-12-07

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  19. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOE Patents [OSTI]

    Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

    2003-01-01

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  20. Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

    DOE Patents [OSTI]

    Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

    2005-08-23

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  1. High thermal conductivity lossy dielectric using a multi layer configuration

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Kiggans, Jr., James O. (Oak Ridge, TN)

    2003-01-01

    Systems and methods are described for loss dielectrics. A loss dielectric includes at least one high dielectric loss layer and at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. A method of manufacturing a loss dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. The systems and methods provide advantages because the loss dielectrics are less costly and more environmentally friendly than the available alternatives.

  2. Towards understanding junction degradation in cadmium telluride solar cells

    SciTech Connect (OSTI)

    Nardone, Marco

    2014-06-21

    A degradation mechanism in cadmium telluride (CdTe/CdS) solar cells is investigated using time-dependent numerical modeling to simulate various temperature, bias, and illumination stress conditions. The physical mechanism is based on defect generation rates that are proportional to nonequilibrium charge carrier concentrations. It is found that a commonly observed degradation mode for CdTe/CdS solar cells can be reproduced only if defects are allowed to form in a narrow region of the absorber layer close to the CdTe/CdS junction. A key aspect of this junction degradation is that both mid-gap donor and shallow acceptor-type defects must be generated simultaneously in response to photo-excitation or applied bias. The numerical approach employed here can be extended to study other mechanisms for any photovoltaic technology.

  3. Transport and magnetization current in a thin layer of Bi{sub 1.8}Pb{sub 0.4}Sr{sub 2.0}Ca{sub 2.2}Cu{sub 3.0}O{sub y} adjacent to silver sheathing in BSCCO-2223 tapes

    SciTech Connect (OSTI)

    Lelovic, M.; Krishnaraj, P.; Deis, T.

    1995-07-01

    The thin superconducting region next to the silver sheath appears to be the region of high critical current density in BSCCO-2223 tapes. Transport current measurements on Bi{sub 1.8}Pb{sub 0.4}Sr{sub 2.0}Ca{sub 2.2}Cu{sub 3.0}O{sub y} tape at 77 K in a low magnetic field applied parallel to the tape thickness indicate an exponential field dependence [J / J{sub c} {proportional_to} exp (- B / B{sub 0})] for transport currents. Magnetic hysteresis was measured in a 10-{mu}m-thick layer of superconductor near the silver sheath as a function of temperature, intensity, and orientation of applied field with respect to the tape. The characteristic field for full penetration depth, B*, for a superconducting slab was found to have a power law dependence on temperature. Magnetization currents as a function of temperature and applied field oriented parallel to the tape thickness, J{sub c,m}(B,T), were determined from the magnetization loop width with a Bean- model expression adapted for an orthorhombic sample. The critical-state model, adjusted for scaling and magnetic relaxation, correlates well with the magnetization current of the thin layer at 77 K.

  4. Isotone Optimization in R: Pool-Adjacent-Violators Algorithm (PAVA) and Active Set Methods

    E-Print Network [OSTI]

    Leeuw, Jan de; Hornik, Kurt; Mair, Patrick

    2009-01-01

    Optimization in R: Pool-Adjacent-Violators Algorithm (PAVA)discuss a generalized version of the Pool-Adjacent-Violators

  5. Isotone Optimization in R: Pool-Adjacent-Violators Algorithm (PAVA) and Active Set Methods

    E-Print Network [OSTI]

    Jan de Leeuw; Kurt Hornik; Patrick Mair

    2011-01-01

    Optimization in R: Pool-Adjacent-Violators Algorithm (PAVA)discuss a generalized version of the Pool-Adjacent-Violators

  6. String Junctions and Holographic Interfaces

    E-Print Network [OSTI]

    Marco Chiodaroli; Michael Gutperle; Ling-Yan Hung; Darya Krym

    2010-11-22

    In this paper we study half-BPS type IIB supergravity solutions with multiple $AdS_3\\times S^3\\times M_4$ asymptotic regions, where $M_4$ is either $T^4$ or $K_3$. These solutions were first constructed in [1] and have geometries given by the warped product of $AdS_2 \\times S^2 \\times M_4 $ over $\\Sigma$, where $\\Sigma$ is a Riemann surface. We show that the holographic boundary has the structure of a star graph, i.e. $n$ half-lines joined at a point. The attractor mechanism and the relation of the solutions to junctions of self-dual strings in six-dimensional supergravity are discussed. The solutions of [1] are constructed introducing two meromorphic and two harmonic functions defined on $\\Sigma$. We focus our analysis on solutions corresponding to junctions of three different conformal field theories and show that the conditions for having a solution charged only under Ramond-Ramond three-form fields reduce to relations involving the positions of the poles and the residues of the relevant harmonic and meromorphic functions. The degeneration limit in which some of the poles collide is analyzed in detail. Finally, we calculate the holographic boundary entropy for a junction of three CFTs and obtain a simple expression in terms of poles and residues.

  7. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  8. Study of a-SiGe:H films and nip devices used in high efficiency triple junction solar cells

    E-Print Network [OSTI]

    Deng, Xunming

    -layers in multi-junction amorphous silicon based solar cells [1]. The advantage is that by varying the amountStudy of a-SiGe:H films and n­i­p devices used in high efficiency triple junction solar cells and n­i­p solar cells for GeH4=Si2H6 ratio varying from 1.43 to 0. This results in a variation of band

  9. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping

    E-Print Network [OSTI]

    Rommel, Sean

    Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick and A. Lochtefeld A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2

  10. Bazaar [+] : addressing critical adjacencies in Mumbai's urban farm

    E-Print Network [OSTI]

    Bhat, Arjun (Arjun Devadas)

    2008-01-01

    This thesis focuses on the city of Mumbai, and evolves the notion of how "critical adjacency" has been instrumental in guiding the city's urban transformations into modernity. Presently, Mumbai experiences some of the ...

  11. Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

    DOE Patents [OSTI]

    Murray, Christopher S. (Bethel Park, PA); Wilt, David M. (Bay Village, OH)

    2000-01-01

    An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

  12. Solar Junction Develops World Record Setting Concentrated Photovoltaic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell Solar Junction Develops World Record Setting Concentrated Photovoltaic Solar Cell April 18, 2013 -...

  13. Grand Junction Office Founder Honored at the Philip C. Leahy...

    Office of Environmental Management (EM)

    Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park Dedication and Open House Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park...

  14. Multi-layer carbon-based coatings for field emission

    DOE Patents [OSTI]

    Sullivan, J.P.; Friedmann, T.A.

    1998-10-13

    A multi-layer resistive carbon film field emitter device for cold cathode field emission applications is disclosed. The multi-layered film of the present invention consists of at least two layers of a conductive carbon material, preferably amorphous-tetrahedrally coordinated carbon, where the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure can be a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film can be a plurality of carbon layers, where adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. 8 figs.

  15. Alternative Strategies for Maximizing the Output of Multi-Junction Photovoltaic Panels

    E-Print Network [OSTI]

    Abrams, Ze'ev R

    2014-01-01

    Multi-junction photovoltaics provide a logical method of increasing the utilization of solar power for a given area. However, their current design and fabrication methods invoke numerous material and cost complexities that limit their potential, particularly for flat panel paradigms. In this paper, three general strategies based on the electrical isolation of the internal sub-layers are described. These strategies involve current or voltage matching the sub-layers by varying of fractional absorption and areal coverage of individual cells within each sub-layer, as well as modifying their combined output using power electronics. A simplified theoretical description of these strategies is provided for pairs of junction materials that allows a more streamlined description of the requirements.

  16. Investigation of the influence of stress shadows on horizontal hydraulic fractures from adjacent lateral wells

    E-Print Network [OSTI]

    Investigation of the influence of stress shadows on horizontal hydraulic fractures from adjacent: Unconventional hydraulic fracturing Stress shadow Adjacent lateral wells Simulfrac and zipperfrac Numerical the simultaneous or near simultaneous hydraulic fracturing of adjacent lateral wells to maximize the fracture

  17. The effect of adjacent layers like biofilms on mass transport through nanofiltration membranes

    E-Print Network [OSTI]

    Bothe, Dieter

    , which is always present on the membrane surface in crossflow filtration processes, as well as a feed to high tangential flow velocities in crossflow filtrations, the size of this biofilm is limited to values

  18. Microwave Photon Counter Based on Josephson Junctions

    E-Print Network [OSTI]

    Y. -F. Chen; D. Hover; S. Sendelbach; L. Maurer; S. T. Merkel; E. J. Pritchett; F. K. Wilhelm; R. McDermott

    2011-11-07

    We describe a microwave photon counter based on the current-biased Josephson junction. The junction is tuned to absorb single microwave photons from the incident field, after which it tunnels into a classically observable voltage state. Using two such detectors, we have performed a microwave version of the Hanbury Brown and Twiss experiment at 4 GHz and demonstrated a clear signature of photon bunching for a thermal source. The design is readily scalable to tens of parallelized junctions, a configuration that would allow number-resolved counting of microwave photons.

  19. Thermoelectric efficiency of critical quantum junctions

    E-Print Network [OSTI]

    Mihail Mintchev; Luca Santoni; Paul Sorba

    2013-10-30

    We derive the efficiency at maximal power of a scale-invariant (critical) quantum junction in exact form. Both Fermi and Bose statistics are considered. We show that time-reversal invariance is spontaneously broken. For fermions we implement a new mechanism for efficiency enhancement above the Curzon-Ahlborn bound, based on a shift of the particle energy in each heat reservoir, proportional to its temperature. In this setting fermionic junctions can even reach at maximal power the Carnot efficiency. The bosonic junctions at maximal power turn out to be less efficient then the fermionic ones.

  20. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO)

    1992-01-01

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

  1. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, J.M.; Kurtz, S.R.

    1992-11-24

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

  2. Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/

    DOE Patents [OSTI]

    Osbourn, G.C.

    1983-10-06

    An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.

  3. SU-E-T-226: Junction Free Craniospinal Irradiation in Linear Accelerator Using Volumetric Modulated Arc Therapy : A Novel Technique Using Dose Tapering

    SciTech Connect (OSTI)

    Sarkar, B; Roy, S; Paul, S; Munshi, A; Roy, Shilpi; Jassal, K; Ganesh, T; Mohanti, BK

    2014-06-01

    Purpose: Spatially separated fields are required for craniospinal irradiation due to field size limitation in linear accelerator. Field junction shits are conventionally done to avoid hot or cold spots. Our study was aimed to demonstrate the feasibility of junction free irradiation plan of craniospinal irradiation (CSI) for Meduloblastoma cases treated in linear accelerator using Volumetric modulated arc therapy (VMAT) technique. Methods: VMAT was planned using multiple isocenters in Monaco V 3.3.0 and delivered in Elekta Synergy linear accelerator. A full arc brain and 40° posterior arc spine fields were planned using two isocentre for short (<1.3 meter height ) and 3 isocentres for taller patients. Unrestricted jaw movement was used in superior-inferior direction. Prescribed dose to PTV was achieved by partial contribution from adjacent beams. A very low dose gradient was generated to taper the isodoses over a long length (>10 cm) at the conventional field junction. Results: In this primary study five patients were planned and three patients were delivered using this novel technique. As the dose contribution from the adjacent beams were varied (gradient) to create a complete dose distribution, therefore there is no specific junction exists in the plan. The junction were extended from 10–14 cm depending on treatment plan. Dose gradient were 9.6±2.3% per cm for brain and 7.9±1.7 % per cm for spine field respectively. Dose delivery error due to positional inaccuracy was calculated for brain and spine field for ±1mm, ±2mm, ±3mm and ±5 mm were 1%–0.8%, 2%–1.6%, 2.8%–2.4% and 4.3%–4% respectively. Conclusion: Dose tapering in junction free CSI do not require a junction shift. Therefore daily imaging for all the field is also not essential. Due to inverse planning dose to organ at risk like thyroid kidney, heart and testis can be reduced significantly. VMAT gives a quicker delivery than Step and shoot or dynamic IMRT.

  4. InGaP/GaAs Inverted Dual Junction Solar Cells For CPV Applications Using Metal-Backed Epitaxial Lift-Off

    SciTech Connect (OSTI)

    Bauhuis, Gerard J.; Mulder, Peter; Haverkamp, Erik J.; Schermer, John J.; Nash, Lee J.; Fulgoni, Dominic J. F.; Ballard, Ian M.; Duggan, Geoffrey

    2010-10-14

    The epitaxial lift-off (ELO) technique has been combined with inverted III-V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO platform we have first grown a GaAs single junction PV cell to establish the basic layer release process and cell processing steps followed by the growth, fabrication and test of an inverted InGaP/GaAs dual junction structure.

  5. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

    E-Print Network [OSTI]

    Wu, Y.; Hasan, T.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q.

    2015-02-05

    for the removal of the native oxide layer on the GaN substrate to form the Schottky junction. First, the GaN substrate is ultrasonically degreased using acetone, ethanol, and deionized (DI) water for 5 min each. The substrate is then treated with a buffered...

  6. Stratigraphy and structure of interior layered deposits in west Candor Chasma, Mars, from High Resolution Stereo Camera (HRSC) stereo

    E-Print Network [OSTI]

    Utrecht, Universiteit

    Stratigraphy and structure of interior layered deposits in west Candor Chasma, Mars, from High the stratigraphy of two adjacent mounds. Layering tends to dip in the same direction as the local topographic slope rotations. The stratigraphy of two adjacent mounds correlates, but the thicknesses of the units differ. Most

  7. Method for closing a drift between adjacent in-situ oil shale retorts

    SciTech Connect (OSTI)

    Hines, A.E.

    1984-04-10

    A row of horizontally spaced-apart in situ oil shale retorts is formed in a subterranean formation containing oil shale. Each row of retorts is formed by excavating development drifts at different elevations through opposite side boundaries of a plurality of retorts in the row of retorts. Each retort is formed by explosively expanding formation toward one or more voids within the boundaries of the retort site to form a fragmented permeable mass of formation particles containing oil shale in each retort. Following formation of each retort, the retort development drifts on the advancing side of the retort are closed off by covering formation particles within the development drift with a layer of crushed oil shale particles having a particle size smaller than the average particle size of oil shale particles in the adjacent retort. In one embodiment, the crushed oil shale particles are pneumatically loaded into the development drift to pack the particles tightly all the way to the top of the drift and throughout the entire cross section of the drift. The closure between adjacent retorts provided by the finely divided oil shale provides sufficient resistance to gas flow through the development drift to effectively inhibit gas flow through the drift during subsequent retorting operations.

  8. Method for closing a drift between adjacent in situ oil shale retorts

    DOE Patents [OSTI]

    Hines, Alex E. (Grand Junction, CO)

    1984-01-01

    A row of horizontally spaced-apart in situ oil shale retorts is formed in a subterranean formation containing oil shale. Each row of retorts is formed by excavating development drifts at different elevations through opposite side boundaries of a plurality of retorts in the row of retorts. Each retort is formed by explosively expanding formation toward one or more voids within the boundaries of the retort site to form a fragmented permeable mass of formation particles containing oil shale in each retort. Following formation of each retort, the retort development drifts on the advancing side of the retort are closed off by covering formation particles within the development drift with a layer of crushed oil shale particles having a particle size smaller than the average particle size of oil shale particles in the adjacent retort. In one embodiment, the crushed oil shale particles are pneumatically loaded into the development drift to pack the particles tightly all the way to the top of the drift and throughout the entire cross section of the drift. The closure between adjacent retorts provided by the finely divided oil shale provides sufficient resistance to gas flow through the development drift to effectively inhibit gas flow through the drift during subsequent retorting operations.

  9. Mind the edge! The role of adjacency matrix degeneration in maximum entropy weighted network models

    E-Print Network [OSTI]

    Sagarra, Oleguer; Díaz-Guilera, Albert

    2015-01-01

    Complex network null models based on entropy maximization are becoming a powerful tool to characterize and analyze data from real systems. However, it is not easy to extract good and unbiased information from these models: A proper understanding of the nature of the underlying events represented in them is crucial. In this paper we emphasize this fact stressing how an accurate counting of configurations compatible with given constraints is fundamental to build good null models for the case of networks with integer valued adjacency matrices constructed from aggregation of one or multiple layers. We show how different assumptions about the elements from which the networks are built give rise to distinctively different statistics, even when considering the same observables to match those of real data. We illustrate our findings by applying the formalism to three datasets using an open-source software package accompanying the present work and demonstrate how such differences are clearly seen when measuring networ...

  10. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

    SciTech Connect (OSTI)

    Liu, X.; Zhang, X. W. Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L.

    2014-11-03

    We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

  11. Effect of Dual-Function Nano-Structured Silicon Oxide Thin Film on Multi-Junction Solar Cells

    SciTech Connect (OSTI)

    Yan, B.; Sivec, L.; Yue, G.; Jiang, C. S.; Yang, J.; Guha, S.

    2011-01-01

    We present our recent study of using nano-structured hydrogenated silicon oxide films (nc-SiO{sub x}:H) as a dual-function layer in multi-junction solar cells. The nc-SiO{sub x}:H films were deposited using very high frequency glow discharge of a SiH{sub 4} (or Si{sub 2}H{sub 6}), CO{sub 2}, PH{sub 3}, and H{sub 2} gas mixture. By optimizing deposition parameters, we obtained 'dual function' nc-SiO{sub x}:H material characterized by a conductivity suitable for use as an n layer and optical properties suitable for use as an inter-reflection layer. We tested the nc-SiO{sub x}:H by replacing the normal n-type material in the tunnel junction of a multi-junction structure. The advantage of the dual-function nc-SiO{sub x}:H layer is twofold; one is to simplify the cell structure, and the other is to reduce any optical loss associated with the inter-reflection layer. Quantum efficiency measurements show the gain in top cell current is equal to or greater than the loss in bottom cell current for a-Si:H/nc-Si:H structures. In addition, a thinner a-Si:H top cell with the nc-SiO{sub x}:H n layer improves the top-cell stability, thereby providing higher stabilized solar cell efficiency. We also used the dual-function layer between the middle and the bottom cells in a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. The gain in the middle cell current is {approx}1.0 mA/cm{sup 2}, leading to an initial active-area efficiency of 14.8%.

  12. Junction-side illuminated silicon detector arrays

    DOE Patents [OSTI]

    Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

    2004-03-30

    A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

  13. Macroscopic quantum tunneling in spin filter ferromagnetic Josephson junctions

    E-Print Network [OSTI]

    Massarotti, D.; Pal, A.; Rotoli, G.; Longobordi, L.; Blamire, M. G.; Tafuri, F.

    2015-06-09

    junctions and the demonstration of triplet supercurrents have suggested the potential of a dissipationless version of spintronics based on unconventional superconductivity. Here we demonstrate evidence for active quantum applications of S-F-S junctions...

  14. Stabilization of Ion Concentration Polarization Using a Heterogeneous Nanoporous Junction

    E-Print Network [OSTI]

    Kim, Pilnam

    We demonstrate a recycled ion-flux through heterogeneous nanoporous junctions, which induce stable ion concentration polarization with an electric field. The nanoporous junctions are based on integration of ionic hydrogels ...

  15. An ab-initio analysis of bimetallic oligoaniline molecular junctions 

    E-Print Network [OSTI]

    Wang, Michael Wei-Lueng

    2007-09-17

    The electron transport characteristics of Oligoaniline molecular junctions terminated with thiol-ends are analyzed with the density functional theory and the Green's function approach. The molecular junction consists of ...

  16. Transmission eigenvalue distributions in highly conductive molecular junctions

    E-Print Network [OSTI]

    Bergfield, Justin P; Barr, Joshua D; Stafford, Charles A

    2012-01-01

    Transmission eigenvalue distributions in highly conductivesingle-molecule junction; transmission eigenchannels Openuniquely characterized by its transmission eigenvalues ? n .

  17. Corrosion protected, multi-layer fuel cell interface

    DOE Patents [OSTI]

    Feigenbaum, Haim (Ramat Ilan, IL); Pudick, Sheldon (Sayreville, NJ); Wang, Chiu L. (Edison, NJ)

    1986-01-01

    An improved interface configuration for use between adjacent elements of a fuel cell stack. The interface is impervious to gas and liquid and provides resistance to corrosion by the electrolyte of the fuel cell. The multi-layer configuration for the interface comprises a non-cupreous metal-coated metallic element to which is film-bonded a conductive layer by hot pressing a resin therebetween. The multi-layer arrangement provides bridging electrical contact.

  18. EA-0930: Facility Operations at the U.S. DOE Grand Junction Projects Office, Grand Junction, Colorado

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of the proposal to expand and upgrade the U.S. Department of Energy's Grand Junction Projects Office facilities and operations in Grand Junction, Colorado.

  19. Josephson Junctions Fabricated by Focussed Ion Beam

    E-Print Network [OSTI]

    Hadfield, Robert Hugh

    at temperature T: ??? ? ??? ??= T2k ?(T) eR TI BN C tanh )( 2 ? , (2.26) where RN is the normal state resistance of the junction (temperature independent in low TC devices) and ? is the energy gap of the (identical) superconducting electrodes. BCS theory...

  20. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  1. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  2. Measuring Vacuum Polarization with Josephson Junctions

    SciTech Connect (OSTI)

    Penin, Alexander A. [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2J1 (Canada) and Institute for Nuclear Research of Russian Academy of Sciences, 117312 Moscow (Russian Federation)

    2010-03-05

    We argue that the vacuum polarization by the virtual electron-positron pairs can be measured by studying a Josephson junction in a strong magnetic field. The vacuum polarization results in a weak dependence of the Josephson constant on the magnetic field strength which is within the reach of the existing experimental techniques.

  3. JUNCTION TREE ALGORITHM Tuesday, September 9, 2008

    E-Print Network [OSTI]

    Cevher, Volkan

    graph G = (NG, EG) to an undi- rected graph G = (NG, EG) plays an important role in the junction tree. More formally, the transformation from G to G requires the addition (to EG) of two sets, EGG and EGG). They are properly defined EGG := (Xi, Xj) N2 : Xk N : (Xi, Xk) EG and (Xj, Xk) EG EGG := (Xj, Xk) N2 : (Xj, Xk

  4. p-n Junction Heterostructure Device Physics Model of a Four Junction Melissa J. Griggs*, Brendan M. Kayes, and Harry A. Atwater

    E-Print Network [OSTI]

    Atwater, Harry

    portion of the solar spectrum more effectively (see Fig. 1). High efficiency triple junction solar cellsp-n Junction Heterostructure Device Physics Model of a Four Junction Solar Cell Melissa J. Griggs-n junction device physics model for GaInP/GaAs/GaInAsP/GaInAs four junction solar cells. The model employs

  5. Analysis and interpretation of tidal currents in the coastal boundary layer

    E-Print Network [OSTI]

    May, Paul Wesley, 1950-

    1979-01-01

    Concern with the impact of human activities on the coastal region of the world's oceans has elicited interest in the so-called "coastal boundary layer"-that band of water adjacent to the coast where ocean currents adjust ...

  6. Nekton Density Patterns in Tidal Ponds and Adjacent Wetlands Related to Pond Size and Salinity

    E-Print Network [OSTI]

    Nekton Density Patterns in Tidal Ponds and Adjacent Wetlands Related to Pond Size and Salinity pond sizes (diameter 750 m=large), and two habitat types (pond, adjacent marsh) in the Barataria Bay Estuary, Louisiana. Nekton assemblages of ponds and the adjacent marsh

  7. Method of depositing multi-layer carbon-based coatings for field emission

    DOE Patents [OSTI]

    Sullivan, J.P.; Friedmann, T.A.

    1999-08-10

    A novel field emitter device is disclosed for cold cathode field emission applications, comprising a multi-layer resistive carbon film. The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials. 8 figs.

  8. Method of depositing multi-layer carbon-based coatings for field emission

    DOE Patents [OSTI]

    Sullivan, John P. (Albuquerque, NM); Friedmann, Thomas A. (Albuquerque, NM)

    1999-01-01

    A novel field emitter device for cold cathode field emission applications, comprising a multi-layer resistive carbon film. The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials.

  9. Mat. Res. Soc. Symp. Proc. Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer

    E-Print Network [OSTI]

    Deng, Xunming

    the efficiencies of the multi-junction devices. The µc-Si cells do not significantly degrade (-light absorbing structures in multi-junction cell with blue-green light absorbing a-Si:H top cells would lead of Microcrystalline Silicon Based Solar Cells at High i-layer Deposition Rates Using a Gas Jet Technique S.J. Jones

  10. Mode-hopping mechanism generating colored noise in a magnetic tunnel junction based spin torque oscillator

    SciTech Connect (OSTI)

    Sharma, Raghav; Dürrenfeld, P.; Iacocca, E.; Heinonen, O. G.; Åkerman, J.; Muduli, P. K.

    2014-09-29

    The frequency noise spectrum of a magnetic tunnel junction based spin torque oscillator is examined where multiple modes and mode-hopping events are observed. The frequency noise spectrum is found to consist of both white noise and 1/f frequency noise. We find a systematic and similar dependence of both white noise and 1/f frequency noise on bias current and the relative angle between the reference and free layers, which changes the effective damping and hence the mode-hopping behavior in this system. The frequency at which the 1/f frequency noise changes to white noise increases as the free layer is aligned away from the anti-parallel orientation w.r.t the reference layer. These results indicate that the origin of 1/f frequency noise is related to mode-hopping, which produces both white noise as well as 1/f frequency noise similar to the case of ring lasers.

  11. Vibrational Heat Transport in Molecular Junctions

    E-Print Network [OSTI]

    Segal, Dvira

    2015-01-01

    We review studies of vibrational energy transfer in a molecular junction geometry, consisting of a molecule bridging two heat reservoirs, solids or large chemical compounds. This setup is of interest for applications in molecular electronics, thermoelectrics, and nanophononics, and for addressing basic questions in the theory of classical and quantum transport. Calculations show that system size, disorder, structure, dimensionality, internal anharmonicities, contact interaction, and quantum coherent effects, are factors that interplay to determine the predominant mechanism (ballistic/diffusive), effectiveness (poor/good) and functionality (linear/nonlinear) of thermal conduction at the nanoscale. We review recent experiments and relevant calculations of quantum heat transfer in molecular junctions. We recount the Landauer approach, appropriate for the study of elastic (harmonic) phononic transport, and outline techniques which incorporate molecular anharmonicities. Theoretical methods are described along with...

  12. Junction conditions in extended Teleparallel gravities

    SciTech Connect (OSTI)

    De la Cruz-Dombriz, Álvaro; Dunsby, Peter K.S.; Sáez-Gómez, Diego E-mail: peter.dunsby@uct.ac.za

    2014-12-01

    In the context of extended Teleparallel gravity theories, we address the issue of junction conditions required to guarantee the correct matching of different regions of spacetime. In the absence of shells/branes, these conditions turn out to be more restrictive than their counterparts in General Relativity as in other extended theories of gravity. In fact, the general junction conditions on the matching hypersurfaces depend on the underlying theory and a new condition on the induced tetrads in order to avoid delta-like distributions in the field equations. This result imposes strict consequences on the viability of standard solutions such as the Einstein-Straus-like construction. We find that the continuity of the scalar torsion is required in order to recover the usual General Relativity results.

  13. Non-Lagrangian Theories from Brane Junctions

    E-Print Network [OSTI]

    Ling Bao; Vladimir Mitev; Elli Pomoni; Masato Taki; Futoshi Yagi

    2013-11-08

    In this article we use 5-brane junctions to study the 5D T_N SCFTs corresponding to the 5D N=1 uplift of the 4D N=2 strongly coupled gauge theories, which are obtained by compactifying N M5 branes on a sphere with three full punctures. Even though these theories have no Lagrangian description, by using the 5-brane junctions proposed by Benini, Benvenuti and Tachikawa, we are able to derive their Seiberg-Witten curves and Nekrasov partition functions. We cross-check our results with the 5D superconformal index proposed by Kim, Kim and Lee. Through the AGTW correspondence, we discuss the relations between 5D superconformal indices and n-point functions of the q-deformed W_N Toda theories.

  14. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

    DOE Patents [OSTI]

    Yang, Liyou (Lawrenceville, NJ)

    1993-10-26

    A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

  15. Semiconductor junction formation by directed heat

    DOE Patents [OSTI]

    Campbell, Robert B. (Pittsburgh, PA)

    1988-03-24

    The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.

  16. Single P-N junction tandem photovoltaic device

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw (Kensington, CA); Ager, III, Joel W. (Berkeley, CA); Yu, Kin Man (Lafayette, CA)

    2011-10-18

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  17. Single P-N junction tandem photovoltaic device

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw (Kensington, CA); Ager, III, Joel W. (Berkeley, CA); Yu, Kin Man (Lafayette, CA)

    2012-03-06

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  18. Spin Torques in Magnetic and Superconducting Tunnel Junctions

    E-Print Network [OSTI]

    Hoffman, Silas Eli

    2012-01-01

    Tunnel Junctions for Spintronic Memories and Beyond. ” IEEEto their application in spintronic devices. Injecting a spinforecasts a new kind of spintronic device that manipulates

  19. Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin

    Office of Scientific and Technical Information (OSTI)

    Phonon Bottleneck in Graphene-Based Josephson Junctions at Millikelvin Temperatures Borzenets, I. V.; Coskun, U. C.; Mebrahtu, H. T.; Bomze, Yu. V.; Smirnov, A. I.; Finkelstein, G....

  20. Limiting and realistic efficiencies of multi-junction solar Photonic Materials Group, FOM institute AMOLF, Amsterdam

    E-Print Network [OSTI]

    Polman, Albert

    Limiting and realistic efficiencies of multi-junction solar cells Photonic Materials Group, FOM of multi-junction solar cells, varying the number of subcells, the concentration of solar light . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.4 Multi-junction Solar cells

  1. Phonon interference effects in molecular junctions

    SciTech Connect (OSTI)

    Markussen, Troels

    2013-12-28

    We study coherent phonon transport through organic, ?-conjugated molecules. Using first principles calculations and Green's function methods, we find that the phonon transmission function in cross-conjugated molecules, like meta-connected benzene, exhibits destructive quantum interference features very analogous to those observed theoretically and experimentally for electron transport in similar molecules. The destructive interference features observed in four different cross-conjugated molecules significantly reduce the thermal conductance with respect to linear conjugated analogues. Such control of the thermal conductance by chemical modifications could be important for thermoelectric applications of molecular junctions.

  2. On-Chip Josephson Junction Microwave Switch

    E-Print Network [OSTI]

    O. Naaman; M. O. Abutaleb; C. Kirby; M. Rennie

    2015-12-04

    The authors report on the design and measurement of a reflective single-pole single-throw microwave switch with no internal power dissipation, based on a superconducting circuit containing a single Josephson junction. The data demonstrate the switch operation with 2 GHz instantaneous bandwidth centered at 10 GHz, low insertion loss, and better than 20 dB on/off ratio. The switch's measured performance agrees well with simulations for input powers up to -100 dBm. An extension of the demonstrated circuit to implement a single-pole double-throw switch is shown in simulation.

  3. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO); Friedman, Daniel J. (Lakewood, CO)

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  4. Junction adhesion molecule expression influences hematopoietic and endothelial commitment of murine embryonic stem cells

    E-Print Network [OSTI]

    Stankovich, Basha Lorraine

    2009-01-01

    OF CALIFORNIA, MERCED Junction Adhesion Molecule Expressionstem cells. Junction adhesion molecules influence cell fateBirchmeier W. Balancing cell adhesion and Wnt signaling, the

  5. Josephson junctions in high-T/sub c/ superconductors

    DOE Patents [OSTI]

    Falco, C.M.; Lee, T.W.

    1981-01-14

    The invention includes a high T/sub c/ Josephson sperconducting junction as well as the method and apparatus which provides the junction by application of a closely controlled and monitored electrical discharge to a microbridge region connecting two portions of a superconducting film.

  6. Theory of first-order layering transitions in thin helium films 

    E-Print Network [OSTI]

    Saslow, WM; Agnolet, Glenn; Campbell, CE; Clements, BE; Krotscheck, E.

    1996-01-01

    solutions for liquid helium. For each layer, the theory yields the chemical potential mu and surface tension alpha as functions of coverage n, and from this we deduce mu(a). For each set of adjacent layers, we then obtain the crossing point in the curves...

  7. Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes

    SciTech Connect (OSTI)

    Kurt, H.; Rode, K.; Oguz, K.; Coey, J. M. D. [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Boese, M.; Faulkner, C. C. [Advanced Microscopy Laboratory, CRANN, Trinity College, Dublin 2 (Ireland)

    2010-06-28

    Boron diffusion out of the CoFeB layers in model systems with thick CoFeB and MgO layers grown by radiofrequency sputtering or electron-beam evaporation and in MgO-based magnetic tunnel junctions (MTJs) is probed after annealing by x-ray photoemission spectroscopy (XPS) and electron energy loss spectroscopy. Successive interfaces are exposed by ion milling the stacks, layer by layer, in the XPS system. Despite the presence of thick CoFeB and a high annealing temperature of 400 deg. C, we found no boron in the MgO or at the MgO/CoFe interfaces. Similar results are also obtained in the MTJs.

  8. MODELING RELATIONAL DATA BY THE ADJACENCY Jari Tyli, Matti Linna, Merja Wanne

    E-Print Network [OSTI]

    Töyli, Jari

    redundant data) gives us a solid base for our work to develop the adjacency model to be used also301 MODELING RELATIONAL DATA BY THE ADJACENCY MODEL Jari Töyli, Matti Linna, Merja Wanne Department@uwasa.fi, mli@uwasa.fi, mw@uwasa.fi Key words: Data models, semistructured data, data integration, web databases

  9. High performance anti-reflection coatings for broadband multi-junction solar cells

    SciTech Connect (OSTI)

    AIKEN,DANIEL J.

    2000-02-23

    The success of bandgap engineering has made high efficiency broadband multi-junction solar cells possible with photo-response out to the band edge of Ge. Modeling has been conducted which suggests that current double layer anti-reflection coating technology is not adequate for these devices in certain cases. Approaches for the development of higher performance anti-reflection coatings are examined. A new AR coating structure based on the use of Herpin equivalent layers is presented. Optical modeling suggests a decrease in the solar weighted reflectance of over 2.5{percent} absolute as a result. This structure requires no additional optical material development and characterization because no new optical materials are necessary. Experimental results and a sensitivity analysis are presented.

  10. Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

    DOE Patents [OSTI]

    Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

    1999-01-01

    The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

  11. Hetero-junction photovoltaic device and method of fabricating the device

    DOE Patents [OSTI]

    Aytug, Tolga; Christen, David K; Paranthaman, Mariappan Parans; Polat, Ozgur

    2014-02-10

    A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

  12. Tandem junction amorphous semiconductor photovoltaic cell

    DOE Patents [OSTI]

    Dalal, Vikram L. (Newark, DE)

    1983-01-01

    A photovoltaic stack comprising at least two p.sup.+ i n.sup.+ cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p.sup.+ i n.sup.+ cells.

  13. Tandem junction amorphous semiconductor photovoltaic cell

    DOE Patents [OSTI]

    Dalal, V.L.

    1983-06-07

    A photovoltaic stack comprising at least two p[sup +]i n[sup +] cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p[sup +]i n[sup +] cells. 3 figs.

  14. Transport in arrays of submicron Josephson junctions over a ground plane

    SciTech Connect (OSTI)

    Ho, Teressa Rae [Univ. of California, Berkeley, CA (US). Dept. of Physics

    1997-12-01

    One-dimensional (1D) and two-dimensional (2D) arrays of Al islands linked by submicron Al/Al{sub x}O{sub y}/Al tunnel junctions were fabricated on an insulating layer grown on a ground plane. The arrays were cooled to temperatures as low as 20 mK where the Josephson coupling energy E{sub J} of each junction and the charging energy E{sub C} of each island were much greater than the thermal energy k{sub B}T. The capacitance C{sub g} between each island and the ground plane was much greater than the junction capacitance C. Two classes of arrays were studied. In the first class, the normal state tunneling resistance of the junctions was much larger than the resistance quantum for single electrons, R{sub N}{much_gt} R{sub Q{sub e}}{identical_to} h/e{sup 2} {approx} 25.8 k{Omega}, and the islands were driven normal by an applied magnetic field such that E{sub J} = 0 and the array was in the Coulomb blockade regime. The arrays were made on degenerately-doped Si, thermally oxidized to a thickness of approximately 100 nm. The current-voltage (I - V) characteristics of a 1D and a 2D array were measured and found to display a threshold voltage V{sub T} below which little current flows. In the second class of arrays, the normal state tunneling resistance of the junctions was close to the resistance quantum for Cooper pairs, R{sub N}{approx}R{sub Q}{equivalent_to}h/4e{sup 4}{approx}6.45k{Omega}, such that E{sub J}/E{sub C}{approx}1. The arrays were made on GaAs/Al{sub 0.3}Ga{sub 0.7}As heterostructures with a two-dimensional electron gas approximately 100 nm below the surface. One array displayed superconducting behavior at low temperature. Two arrays displayed insulating behavior at low temperature, and the size of the Coulomb gap increased with increasing R{sub g}.

  15. Transport Layer Cornell University

    E-Print Network [OSTI]

    Low, Steven H.

    Transport Layer Ao Tang Cornell University Ithaca, NY 14853 Lachlan L. H. Andrew California. Low California Institute of Technology Pasadena, CA 91125 I. INTRODUCTION The Internet has evolved of the physical layer, the link layer, the network layer, the transport layer and the application layer1 . See

  16. Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

    DOE Patents [OSTI]

    Wood, Richard F. (Oak Ridge, TN); Young, Rosa T. (Farragut, TN)

    1984-01-01

    The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.

  17. Mechanical deformations of boron nitride nanotubes in crossed junctions

    SciTech Connect (OSTI)

    Zhao, Yadong; Chen, Xiaoming; Ke, Changhong; Park, Cheol; Fay, Catharine C.; Stupkiewicz, Stanislaw

    2014-04-28

    We present a study of the mechanical deformations of boron nitride nanotubes (BNNTs) in crossed junctions. The structure and deformation of the crossed tubes in the junction are characterized by using atomic force microscopy. Our results show that the total tube heights are reduced by 20%–33% at the crossed junctions formed by double-walled BNNTs with outer diameters in the range of 2.21–4.67?nm. The measured tube height reduction is found to be in a nearly linear relationship with the summation of the outer diameters of the two tubes forming the junction. The contact force between the two tubes in the junction is estimated based on contact mechanics theories and found to be within the range of 4.2–7.6 nN. The Young's modulus of BNNTs and their binding strengths with the substrate are quantified, based on the deformation profile of the upper tube in the junction, and are found to be 1.07?±?0.11 TPa and 0.18–0.29 nJ/m, respectively. Finally, we perform finite element simulations on the mechanical deformations of the crossed BNNT junctions. The numerical simulation results are consistent with both the experimental measurements and the analytical analysis. The results reported in this paper contribute to a better understanding of the structural and mechanical properties of BNNTs and to the pursuit of their applications.

  18. Effect of current injection into thin-film Josephson junctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to ?=2?2/d;? is the bulk London penetration depth of the film material and d is the film thickness.

  19. van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene

    E-Print Network [OSTI]

    ABSTRACT: Semiconductor nanowire arrays integrated vertically on graphene films offer significant-organic vapor-phase epitaxy Hybrid junctions composed of semiconductor nanostruc- tures and graphene havevan der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene Young Joon Hong

  20. Thermal buckling of metal oil tanks subject to an adjacent fire 

    E-Print Network [OSTI]

    Liu, Ying

    2011-11-22

    Fire is one of the main hazards associated with storage tanks containing flammable liquids. These tanks are usually closely spaced and in large groups, so where a petroleum fire occurs, adjacent tanks are susceptible to ...

  1. Thermal buckling of metal oil tanks subject to an adjacent fire 

    E-Print Network [OSTI]

    Liu, Ying

    2011-01-01

    Fire is one of the main hazards associated with storage tanks containing flammable liquids. These tanks are usually closely spaced and in large groups, so where a petroleum fire occurs, adjacent tanks are susceptible to ...

  2. The economic effects of elevated and depressed freeways on adjacent property owners 

    E-Print Network [OSTI]

    Scurry, Floyd David

    1995-01-01

    businesses operate, with location and accessibility rating as two of the main factors. Past research focused on the impacts that the freeway had on the adjacent property values. Little research examined the effect that geometric design could play...

  3. Profiling the Thermoelectric Power of Semiconductor Junctions with

    E-Print Network [OSTI]

    components or hazardous working fluids. Developing new thermoelectric mate- rials with high figures of merit S is governed by local carrier statistics, SThEM allows us to profile precise elec- tronic junction locations

  4. Epithelial cell polarity and cell junctions in drosophila

    E-Print Network [OSTI]

    Tepass, Ulrich; Tanentzapf­ , Guy; Ward, Robert; Fehon, Richard G.

    2001-12-01

    to the most detailed understanding of these processes in a whole animal model system to date. Asymmetry of the plasma membrane and the differentiation of membrane domains and cellular junctions are controlled by protein complexes that assemble around...

  5. Anomalous supercurrent from Majorana states in topological insulator Josephson junctions

    E-Print Network [OSTI]

    Potter, Andrew C.

    We propose a Josephson junction setup based on a topological insulator (TI) thin film to detect Majorana states that exploits the unique helical and extended nature of the TI surface state. When the magnetic flux through ...

  6. Electron transport in normal-metal/superconductor junctions 

    E-Print Network [OSTI]

    Yan, XZ; Zhao, HW; Hu, Chia-Ren.

    2000-01-01

    On the basis of the Keldysh method of nonequilibrium systems, we develop a theory of electron tunneling in normal-metal-superconductor junctions. By using the tunneling Hamiltonian model (being appropriate for the tight-binding systems...

  7. Power dissipation in a single molecule junction: Tracking energy levels

    E-Print Network [OSTI]

    Yaghoob Naimi; Javad Vahedi

    2014-12-05

    Motivated by recent work [Lee et al. Nature {\\bf 489}, 209 (2013)], on asymmetry features of heat dissipation in the electrodes of molecular junctions, we put forward an idea as a result of heat dissipation in the electrodes. Based on tight-binding model and a generalized Green's function formalism, we describe the conditions under which heat dissipation shows symmetry characteristic and does not depend on the bias polarity. We also show the power dissipated in the junction can be used to detect which energy levels of molecule junction play more or less role in the transmission process. We present this idea by studying a simple toy model and Au-$C_{60}$-Au junction.

  8. EA-1037: Uranium Lease Management Program, Grand Junction, Colorado

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of the U.S. Department of Energy's Grand Junction Projects Office's proposal to maintain and preserve the nation's immediately accessible supply of...

  9. Phase diagram of Josephson junction between

    Office of Scientific and Technical Information (OSTI)

    diagram of Josephson junction betweensandssuperconductors in the dirty limit...

  10. Corrigendum Corrigendum to "Gap junction-mediated electrical transmission

    E-Print Network [OSTI]

    Rash, John E.

    Corrigendum Corrigendum to "Gap junction-mediated electrical transmission: Regulatory mechanisms, show variability in the electrical conductance of the synaptic transmission, even though the pre chemical component. Thus, electrical synapses from neighboring club endings coexist at different degrees

  11. Metal-Semiconductor junctions tlu@math.pku.edu.cn

    E-Print Network [OSTI]

    Lu, Tiao

    of Ec and Ev and also changes EFi n=ni e -q F - kT , p=ni e q F- kT n-p 2ni = e -F1 Metal-Semiconductor junctions tlu@math.pku.edu.cn homepage: dsec.pku.edu.cn/~tlu blog: http://hi.baidu.com/motioo #12;2 - Many of the properties of pn junctions can be realized by forming an appropriate metal

  12. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOE Patents [OSTI]

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-07-04

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

  13. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOE Patents [OSTI]

    Murduck, James M. (Lisle, IL); Lepetre, Yves J. (Lauris, FR); Schuller, Ivan K. (Woodridge, IL); Ketterson, John B. (Evanston, IL)

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

  14. Modeling the Physical and Biochemical Influence of Ocean Thermal Energy Conversion Plant Discharges into their Adjacent Waters

    Broader source: Energy.gov [DOE]

    Modeling the Physical and Biochemical Influence of Ocean Thermal Energy Conversion Plant Discharges into their Adjacent Waters

  15. Building biomedical materials layer-by-layer

    E-Print Network [OSTI]

    Hammond, Paula T.

    In this materials perspective, the promise of water based layer-by-layer (LbL) assembly as a means of generating drug-releasing surfaces for biomedical applications, from small molecule therapeutics to biologic drugs and ...

  16. EA-1338: Transfer of the Department of Energy Grand Junction Office to Non-DOE Ownership, Grand Junction, Colorado

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposed transfer of real and personal property at the U.S. Department of Energy's Grand Junction Office to non-DOE ownership.

  17. 2. HIGH-LOv~ JUNCTION FORY_,\\'UO AN EXPERIMENTAL STUDY OF AL-ALLOYED:'p+ JUNCT;[ONS FOR SSF SOLAR CELT.S As temperature rises en..!."

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    . Luque formed. The deposited Al diss Instituto de Energia Solar {E.T,S,I.T,} phase composition given2. HIGH-LOv~ JUNCTION FORY_,\\'UO AN EXPERIMENTAL STUDY OF AL-ALLOYED:§'p+ JUNCT;[ONS FOR SSF SOLAR+pp+ bifacial SSF solar cells are used to experimentally analyse the interphase in a similar way a 5i layer

  18. SMALL AREA SILICON DIFFUSED JUNCTION X-RAY DETECTORS

    E-Print Network [OSTI]

    Walton, J.T.

    2010-01-01

    hours. This produces an oxide layer of approximately 7000A.are then cut through this oxide layer using photomasking

  19. Noise and microresonance of critical current in Josephson junction induced by Kondo trap states

    E-Print Network [OSTI]

    Mohammad H. Ansari; Frank K. Wilhelm

    2011-12-01

    We analyze the impact of trap states in the oxide layer of a superconducting tunnel junctions, on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the current blockage due to repulsion at the occupied trap states, and the noise from electrons hopping across a trap. We extend previous studies of noninteracting traps to the case where the traps have on-site electron repulsion inside one ballistic channel. The repulsion not only allows the appropriate temperature dependence of 1/f noise, but also is a control to the coupling between the computational qubit and the spurious two-level systems inside the oxide dielectric. We use second order perturbation theory which allows to obtain analytical formulae for the interacting bound states and spectral weights, limited to small and intermediate repulsions. Remarkably, it still reproduces the main features of the model as identified from the Numerical Renormalization Group. We present analytical formulations for the subgap bound state energies, the singlet-doublet phase boundary, and the spectral weights. We show that interactions can reverse the supercurrent across the trap. We finally work out the spectrum of junction resonators for qubits in the presence of on-site repulsive electrons and analyze its dependence on microscopic parameters that may be controlled by fabrication.

  20. AMPS MODELING OF NANOCRYSTALLINE SI P-LAYER IN A-SI NIP SOLAR CELLS X. B. Liao, W. Wang and X. Deng

    E-Print Network [OSTI]

    Deng, Xunming

    . INTRODUCTION In order to provide guidance for the optimization of triple-junction amorphous silicon based solar-a-SiGe on the illuminated I-V characteristics for the middle and bottom component cells of a triple-junction a-Si solar cellAMPS MODELING OF NANOCRYSTALLINE SI P-LAYER IN A-SI NIP SOLAR CELLS X. B. Liao, W. Wang and X. Deng

    1. In-situ intercalation dynamics in inorganic-organic layered perovskite thin films

      E-Print Network [OSTI]

      Ahmad, Shahab; Kanaujia, Pawan K.; Niu, Wendy; Baumberg, Jeremy J.; Prakash, G. Vijaya

      2014-06-06

      , C. W.; Hamakawa, Y. Optimum Design and Preparation of a?Si/a?Si/a?SiGe Triple?Junction Solar Cells J. Appl. Phys. 1994, 75, 588- 595. 4. Hiibner, A.; Aberle, A. G.; Hezel, R. Novel Cost-Effective Bifacial Silicon Solar Cells with 19.4% Front... .; Virshup, G. F.; Klausmeier-Brown, M.; Ristow, M. L.; Wanlass, M. W. 25.2% Efficiency (1?Sun, Air Mass 0) AlGaAs/GaAs/InGaAsP Three?Junction, Two?Terminal Solar Cell Appl. Phys. Lett. 1992, 60, 1691-1693. 7. Tang, C.W. Two?Layer Organic Photovoltaic Cell...

    2. Noise and microresonance of critical current in Josephson junction induced by Kondo trap states

      E-Print Network [OSTI]

      Ansari, Mohammad H

      2011-01-01

      We analyze the impact of trap states in the oxide layer of a superconducting tunnel junctions, on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the current blockage due to repulsion at the occupied trap states, and the noise from electrons hopping across a trap. We extend previous studies of noninteracting traps to the case where the traps have on-site electron repulsion inside one ballistic channel. The repulsion not only allows the appropriate temperature dependence of 1/f noise, but also is a control to the coupling between the computational qubit and the spurious two-level systems inside the oxide dielectric. We use second order perturbation theory which allows to obtain analytical formulae for the interacting bound states and spectral weights, limited to small and intermediate repulsions. Remarkably, it still reproduces the main features of the model as identified from the Numerical Renormalization Group. We present ...

    3. InGaAsN/GaAs heterojunction for multi-junction solar cells

      DOE Patents [OSTI]

      Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

      2001-01-01

      An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

    4. Measure Guideline: Optimizing the Configuration of Flexible Duct Junction Boxes

      SciTech Connect (OSTI)

      Beach, R.; Burdick, A.

      2014-03-01

      This measure guideline offers additional recommendations to heating, ventilation, and air conditioning (HVAC) system designers for optimizing flexible duct, constant-volume HVAC systems using junction boxes within Air Conditioning Contractors of America (ACCA) Manual D guidance (Rutkowski, H. Manual D -- Residential Duct Systems, 3rd edition, Version 1.00. Arlington, VA: Air Conditioning Contractors of America, 2009.). IBACOS used computational fluid dynamics software to explore and develop guidance to better control the airflow effects of factors that may impact pressure losses within junction boxes among various design configurations (Beach, R., Prahl, D., and Lange, R. CFD Analysis of Flexible Duct Junction Box Design. Golden, CO: National Renewable Energy Laboratory, submitted for publication 2013). These recommendations can help to ensure that a system aligns more closely with the design and the occupants' comfort expectations. Specifically, the recommendations described herein show how to configure a rectangular box with four outlets, a triangular box with three outlets, metal wyes with two outlets, and multiple configurations for more than four outlets. Designers of HVAC systems, contractors who are fabricating junction boxes on site, and anyone using the ACCA Manual D process for sizing duct runs will find this measure guideline invaluable for more accurately minimizing pressure losses when using junction boxes with flexible ducts.

    5. Discharge waters from a power plant as an influent of phytoplankton in adjacent estuarine waters 

      E-Print Network [OSTI]

      Strong, Clyde B

      1977-01-01

      DISCHARGE WATERS FROM A POWER PLANT AS AN 1NFLUENT OF PHYTOPLANKTON IN ADJACENT ESTUARINE WATERS A Thesis 'by CLYDE B. STRONG, JR. Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement... for the degree of MASTER OF SCIENCE December 1977 Major Su'bject: Wildlife and Fisheries Sciences DISCHARGE WATERS FROM A POWER PLANT AS AN INFLUEN'I' OF PHYTOPLANKTON IN ADJACENT ESTUARINE WATERS A Thesis by CLYDE B. STRONG, JR. Approved as to sty...

    6. Superpoissonian shot noise in organic magnetic tunnel junctions

      SciTech Connect (OSTI)

      Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G.; Hong, Jhen-Yong; Lin, Minn-Tsong; Szczepa?ski, Tomasz; Dugaev, Vitalii K.; Barna?, Józef

      2014-12-08

      Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

    7. Junction-based field emission structure for field emission display

      DOE Patents [OSTI]

      Dinh, Long N. (Concord, CA); Balooch, Mehdi (Berkeley, CA); McLean, II, William (Oakland, CA); Schildbach, Marcus A. (Livermore, CA)

      2002-01-01

      A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.

    8. Single Molecule Junctions: Probing Contact Chemistry and Fundamental Circuit Laws

      SciTech Connect (OSTI)

      Hybertsen M. S.

      2013-04-11

      By exploiting selective link chemistry, formation of single molecule junctions with reproducible conductance has become established. Systematic studies reveal the structure-conductance relationships for diverse molecules. I will draw on experiments from my collaborators at Columbia University, atomic-scale calculations and theory to describe progress in two areas. First, I will describe a novel route to form single molecule junctions, based on SnMe3 terminated molecules, in which gold directly bonds to carbon in the molecule backbone resulting in near ideal contact resistance [1]. Second, comparison of the conductance of junctions formed with molecular species containing either one backbone or two backbones in parallel allows demonstration of the role of quantum interference in the conductance superposition law at the molecular scale [2].

    9. Environmental Audit of the Grand Junction Projects Office

      SciTech Connect (OSTI)

      Not Available

      1991-08-01

      The Grand Junction Projects Office (GJPO) is located in Mesa County, Colorado, immediately south and west of the Grand Junction city limits. The US Atomic Energy Commission (AEC) established the Colorado Raw Materials Office at the present-day Grand Junction Projects Office in 1947, to aid in the development of a viable domestic uranium industry. Activities at the site included sampling uranium concentrate; pilot-plant milling research, including testing and processing of uranium ores; and operation of a uranium mill pilot plant from 1954 to 1958. The last shipment of uranium concentrate was sent from GJPO in January, 1975. Since that time the site has been utilized to support various DOE programs, such as the former National Uranium Resource Evaluation (NURE) Program, the Uranium Mill Tailings Remedial Action Project (UMTRAP), the Surplus Facilities Management Program (SFMP), and the Technical Measurements Center (TMC). All known contamination at GJPO is believed to be the result of the past uranium milling, analyses, and storage activities. Hazards associated with the wastes impounded at GJPO include surface and ground-water contamination and potential radon and gamma-radiation exposure. This report documents the results of the Baseline Environmental Audit conducted at Grand Junction Projects Office (GJPO) located in Grand Junction, Colorado. The Grand Junction Baseline Environmental Audit was conducted from May 28 to June 12, 1991, by the Office of Environmental Audit (EH-24). This Audit evaluated environmental programs and activities at GJPO, as well as GJPO activities at the State-Owned Temporary Repository. 4 figs., 12 tabs.

    10. Regulation of specific connexins differentially alters gap junction permeability and endothelial cell function

      E-Print Network [OSTI]

      Elihu, David Morad

      2006-01-01

      While many have explored how vascular processes alter gap junction communication and composition few have analyzed the role of specific gap junction connexin proteins in regulating cellular communication and wound healing. ...

    11. Estimating commuter rail demand to Kendall Square along the Grand Junction Corridor

      E-Print Network [OSTI]

      Bockelie, Adam

      2012-01-01

      Since acquiring the Grand Junction Railroad in June 2010 from CSX, the Massachusetts Bay Transit Authority (MBTA) has explored the possibility of using the line for commuter rail service. In addition the Grand Junction ...

    12. Computer-assisted data acquisition on Josephson junctions

      SciTech Connect (OSTI)

      Pagano, S. ); Costabile, G.; Fedullo, V.

      1989-09-01

      An automatic digital data-acquisition system for the test and characterization of superconducting Josephson tunnel junctions is presented. The key feature is represented by the high degree of interaction of the measurement system with the device under test. This is accomplished by an iterated sequence of data acquisitions, automatic analysis, and subsequent modifications of the control signals in the device. In this way, the basic calibration and the value of the relevant quantities involved with the Josephson junction are automatically determined. A connection with a host computer makes possible more complex data analysis, while the full control of the experiment by a dedicated computer allows the operator to perform nonroutine procedures.

    13. Experimental Studies of Oxide Magnetic Tunnel Junctions and Graphene

      E-Print Network [OSTI]

      Liu, Xinfei

      2012-01-01

      grown ex-situ by Atomic Layer Deposition as well as LSMO/40 III-2-2 Atomic Layer Depositionand PLD etc Atomic layer deposition (ALD) is well-known

    14. Realising high-current gain p-n-p transistors using a novel surface accumulation layer transistor

      E-Print Network [OSTI]

      Kumar, M. Jagadesh

      of minority carrier transit time caused by the presence of the high-low junction[7]. While high gain lateral p-n-pRealising high-current gain p-n-p transistors using a novel surface accumulation layer transistor (SALTran) concept M. Jagadesh Kumar and V. Parihar Abstract: The authors report a new p-n-p surface

    15. TM-mode coupling to a Josephson junction S. J. Lewandowski

      E-Print Network [OSTI]

      Boyer, Edmond

      of the junction electrodes. to the j unction was provided by two leads immersed in superconducting solder, which

    16. Optimized Triple-Junction Solar Cells Using Inverted Metamorphic Approach (Presentation)

      SciTech Connect (OSTI)

      Geisz, J. F.

      2008-11-01

      Record efficiencies with triple-junction inverted metamorphic designs, modeling useful to optimize, and consider operating conditions before choosing design.

    17. The Rate of Emergence of Magnetic Dipoles in Coronal Holes and Adjacent Quiet-Sun Regions

      E-Print Network [OSTI]

      The Rate of Emergence of Magnetic Dipoles in Coronal Holes and Adjacent Quiet-Sun Regions V. I regions on the quiet Sun. Coronal holes are regions where the open magnetic flux of the Sun, the component to the surrounding quiet Sun. This result is consistent with a prediction in a recent model for the transport of open

    18. Distorted benzene bearing two bulky substituents on adjacent positions: structure of

      E-Print Network [OSTI]

      Kaszynski, Piotr

      Distorted benzene bearing two bulky substituents on adjacent positions: structure of 1,2-bis(1,2-dicarba-closo-dodecaboran-1-yl)benzene Yasuyuki Endo,a,* Chalermkiat Songkram,b Kiminori Ohta,a Piotr analysis of 1,2-bis(o-carboranyl)benzene were performed to examine the steric effects of the two extremely

    19. Reinvestigating Channel Orthogonality -Adjacent Channel Interference in IEEE 802.11n Networks

      E-Print Network [OSTI]

      .11 with a focus on new 802.11n standard. ACI is causing problems that are related to the carrier sensing mechanism,sombrutz}@informatik.hu-berlin.de Abstract--In this paper we analyze the adverse effects of Adjacent Channel Interference (ACI) on 802 effect of ACI can be reduced in two ways. First, by increasing the spatial separation between the radios

    20. On the Approximability of the Exemplar Adjacency Number Problem for Genomes with Gene Repetitions

      E-Print Network [OSTI]

      Zhu, Binhai

      On the Approximability of the Exemplar Adjacency Number Problem for Genomes with Gene Repetitions the similarity between two genomes (or in general, be- tween any two sequences drawn from the same alphabet). For two genomes G and H drawn from the same set of n gene families and containing gene repeti- tions, we

    1. Cu, Cr and As distribution in soils adjacent to pressure-treated decks, fences and poles

      E-Print Network [OSTI]

      Ma, Lena

      Cu, Cr and As distribution in soils adjacent to pressure-treated decks, fences and poles Tait with depth in areas close to CCA-treated poles. Abstract Chromated copper arsenate (CCA)-treated wood has), and copper (Cu), in soils surrounding CCA-treated wood structures such as decks, fences and poles; and (2

    2. Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells

      SciTech Connect (OSTI)

      Khatri, I.; Tang, Z.; Hiate, T.; Liu, Q.; Ishikawa, R.; Ueno, K.; Shirai, H.

      2013-12-21

      We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm{sup 2}/V s for the 12–15?wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15?wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 2–3?nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.

    3. FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS

      E-Print Network [OSTI]

      Deng, Xunming

      FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. INTRODUCTION A-Si:H single-junction solar cells

    4. OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng

      E-Print Network [OSTI]

      Deng, Xunming

      OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR CELLS Xunming Deng Department, tandem and triple-junction a-SiGe based solar cells and materials [6-19]. Much of the research is also light and bias voltage for the measurement of multiple-junction cells. Materials characterization using

    5. Design of photonic metamaterial multi-junction solar cells using rigorous coupled wave analysis

      E-Print Network [OSTI]

      Lansey, Eli

      Design of photonic metamaterial multi-junction solar cells using rigorous coupled wave analysis Eli a horizontally-oriented multi-junction solar cell by creating an array of cavities tuned with targeted CMs of New York, New York, NY, USA 10031 August 26, 2010 ABSTRACT We have developed a method to design multi-junction

    6. PHYSICAL REVIEW B 84, 195428 (2011) Semiclassical magnetotransport in graphene n-p junctions

      E-Print Network [OSTI]

      Ullmo, Denis

      2011-01-01

      PHYSICAL REVIEW B 84, 195428 (2011) Semiclassical magnetotransport in graphene n- p junctions n-p junctions in the quantum Hall regime. This framework is known to experimentally exhibit, creating a n-p junction at the regions' interface, an ideal setup to study Klein tunneling. Using a strong

    7. Development status of triple-junction solar cells optimized for low intensity low temperature applications

      E-Print Network [OSTI]

      Development status of triple-junction solar cells optimized for low intensity low temperature triple-junction solar cells manufactured by AZUR SPACE Solar Power GmbH under low intensity low unusable for deep space missions. Fig. 1: Example of a flat spot effect present in a triple- junction solar

    8. DESIGN APPROACHES AND MATERIALS PROCESSES FOR ULTRAHIGH EFFICIENCY LATTICE MISMATCHED MULTI-JUNCTION SOLAR CELLS

      E-Print Network [OSTI]

      Atwater, Harry

      of the minority carrier lifetime. INTRODUCTION High efficiency triple junction solar cells have recently been heterostructures grown in a multi-junction solar cell-like structure by MOCVD. Initial solar cell data are also of the materials used in multi-junction solar cells must be optimized to efficiently absorb as much of the solar

    9. LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS

      E-Print Network [OSTI]

      LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS F. Haase losses in back-contact back- junction monocrystalline thin-film silicon solar cells. The cells are made for back-contact back- junction (BC BJ) monocrystalline thin-film silicon solar cells using the PSI process

    10. Nanowire-Based Molecular Monolayer Junctions: Synthesis, Assembly, and Electrical Characterization

      E-Print Network [OSTI]

      (phenylene vinylene) (OPV) were prepared by replicating the pores of sub-40 nm diameter polycarbonate track etched that the conductance of junctions formed with -conjugated oligomers are several orders of magnitude larger than the saturated alkanes, with the OPV junctions having the highest conductance. The molecular wire junction

    11. Process for selectively treating a subterranean formation using coiled tubing without affecting or being affected by the two adjacent zones

      SciTech Connect (OSTI)

      Vercaemer, C.; Lemanczyk, R.; Piot, B.

      1989-06-27

      A process is described for selectively treating a subterranean formation without affecting adjacent zones above and below the formation characterized by: injecting a treatment fluid into a wellbore annulus adjacent the formation to be treated and simultaneously injecting two protection fluids, immiscible with the treatment fluid, into the annulus adjacent the zones wherein the treatment fluid and protection fluids are separated with the wellbore annulus solely by a fluid interface between the treatment fluid and each of the immiscible protection fluids.

    12. Mechanical tugging force regulates the size of cellcell junctions

      E-Print Network [OSTI]

      Chen, Christopher S.

      Mechanical tugging force regulates the size of cell­cell junctions Zhijun Liua,1 , John L. Tanb,1 through the generation of mechanical forces at sites of cell­matrix and cell­cell contact. While increased mechanical load- ing at cell­matrix adhesions results in focal adhesion growth, whether forces drive changes

    13. ALTERNATIVE MATERIALS FOR RAMP-EDGE SNS JUNCTIONS

      SciTech Connect (OSTI)

      Jia, Q.; Fan, Y.

      1999-06-01

      We report on the processing optimization and fabrication of ramp-edge high-temperature superconducting junctions by using alternative materials for both superconductor electrodes and normal-metal barrier. By using Ag-doped YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (Ag:YBCO) as electrodes and a cation-modified compound of (Pr{sub y}Gd{sub 0.6{minus}y})Ca{sub 0.4}Ba{sub 1.6}La{sub 0.4}Cu{sub 3}O{sub 7} (y = 0.4, 0.5, and 0.6) as a normal-metal barrier, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. By using Ag:YBCO as electrodes, we have found that the processing controllability /reproducibility and the stability of the SNS junctions are improved substantially. The junctions fabricated with these alternative materials show well-defined RSJ-like current vs voltage characteristics at liquid nitrogen temperature.

    14. Back-contacted back-junction silicon solar cells

      E-Print Network [OSTI]

      Johansen, Tom Henning

      electricity from BC-BJ silicon solar cells cost-competitive with electBack-contacted back-junction silicon solar cells Krister Mangersnes THESIS submitted in partial nearly four years as a Ph.D. student at the Institute for Energy Technology (IFE), Department of Solar

    15. Performance model assessment for multi-junction concentrating photovoltaic systems.

      SciTech Connect (OSTI)

      Riley, Daniel M.; McConnell, Robert.; Sahm, Aaron; Crawford, Clark; King, David L.; Cameron, Christopher P.; Foresi, James S.

      2010-03-01

      Four approaches to modeling multi-junction concentrating photovoltaic system performance are assessed by comparing modeled performance to measured performance. Measured weather, irradiance, and system performance data were collected on two systems over a one month period. Residual analysis is used to assess the models and to identify opportunities for model improvement.

    16. PARAMETRIC EXCITATION OF PLASMA OSCILLATIONS IN JOSEPHSON JUNCTIONS

      E-Print Network [OSTI]

      Boyer, Edmond

      b. ' FIG. 3. - (a) 03B1c tan çoo vs. 2/Q at co = 2 cop. Straight line : theory. Circles : analog harmonic generation with big amplitude may be understood from a discussion of the stability properties frequency FIG. 1. - The junction model. For the analog R = 500 il, Io = 1 mA, C = 100 nF, and k = « 2 e

    17. Gap junction-mediated electrical transmission: Regulatory mechanisms and plasticity

      E-Print Network [OSTI]

      Rash, John E.

      Gap junction-mediated electrical transmission: Regulatory mechanisms and plasticity Alberto E of synaptic transmission: chemical and electrical. While most efforts have been dedicated to the understanding in revised form 16 May 2012 Accepted 23 May 2012 Available online 31 May 2012 Keywords: Electrical synapse

    18. Photo-Thermoelectric Effect at a Graphene Interface Junction

      E-Print Network [OSTI]

      McEuen, Paul L.

      Photo-Thermoelectric Effect at a Graphene Interface Junction Xiaodong Xu, Nathaniel M. Gabor increase at the cryogenic temperature as compared to room temperature. Assuming the thermoelectric power predictions. KEYWORDS Graphene, photocurrent, photo-thermoelectric effect D evices that convert photons

    19. Photonic layered media

      DOE Patents [OSTI]

      Fleming, James G. (Albuquerque, NM); Lin, Shawn-Yu (Albuquerque, NM)

      2002-01-01

      A new class of structured dielectric media which exhibit significant photonic bandstructure has been invented. The new structures, called photonic layered media, are easy to fabricate using existing layer-by-layer growth techniques, and offer the ability to significantly extend our practical ability to tailor the properties of such optical materials.

    20. Scintillator reflective layer coextrusion

      DOE Patents [OSTI]

      Yun, Jae-Chul (Naperville, IL); Para, Adam (St. Charles, IL)

      2001-01-01

      A polymeric scintillator has a reflective layer adhered to the exterior surface thereof. The reflective layer comprises a reflective pigment and an adhesive binder. The adhesive binder includes polymeric material from which the scintillator is formed. A method of forming the polymeric scintillator having a reflective layer adhered to the exterior surface thereof is also provided. The method includes the steps of (a) extruding an inner core member from a first amount of polymeric scintillator material, and (b) coextruding an outer reflective layer on the exterior surface of the inner core member. The outer reflective layer comprises a reflective pigment and a second amount of the polymeric scintillator material.

    1. Atomically wired molecular junctions: Connecting a single organic molecule by chains of metal atoms

      E-Print Network [OSTI]

      Yelin, Tamar; Kuritz, Natalia; Korytár, Richard; Bagrets, Alexei; Evers, Ferdinand; Kronik, Leeor; Tal, Oren

      2015-01-01

      Using a break junction technique, we find a clear signature for the formation of conducting hybrid junctions composed of a single organic molecule (benzene, naphthalene or anthracene) connected to chains of platinum atoms. The hybrid junctions exhibit metallic-like conductance (~0.1-1G0), which is rather insensitive to further elongation by additional atoms. At low bias voltage the hybrid junctions can be elongated significantly beyond the length of the bare atomic chains. Ab initio calculations reveal that benzene based hybrid junctions have a significant binding energy and high structural flexibility that may contribute to the survival of the hybrid junction during the elongation process. The fabrication of hybrid junctions opens the way for combining the different properties of atomic chains and organic molecules to realize a new class of atomic scale interfaces.

    2. Possible stress states adjacent to the rupture zone of the 1999 Chi-Chi, Taiwan, earthquake

      E-Print Network [OSTI]

      Wu, Yih-Min

      Possible stress states adjacent to the rupture zone of the 1999 Chi-Chi, Taiwan, earthquake Chung-Han Chan a, , Ya-Ju Hsu b , Yih-Min Wu a a Department of Geosciences, National Taiwan University, Taipei, Taiwan b Institute of Earth Sciences, Academia Sinica, Taipei, Taiwan a b s t r a c ta r t i c l e i n f

    3. Layered plasma polymer composite membranes

      DOE Patents [OSTI]

      Babcock, W.C.

      1994-10-11

      Layered plasma polymer composite fluid separation membranes are disclosed, which comprise alternating selective and permeable layers for a total of at least 2n layers, where n is [>=]2 and is the number of selective layers. 2 figs.

    4. Topological p-n junctions in helical edge states

      E-Print Network [OSTI]

      Disha Wadhawan; Poonam Mehta; Sourin Das

      2015-10-08

      Quantum spin Hall effect is endowed with topologically protected edge modes with gapless Dirac spectrum. Applying a magnetic field locally along the edge leads to a gapped edge spectrum with opposite parity for winding of spin texture for conduction and valence band. Using Pancharatnam's prescription for geometric phase it is shown that mismatch of this parity across a $p$-$n$ junction, which could be engineered into the edge by electrical gate induced doping, leads to a phase dependence in the two-terminal conductance which is purely topological (0 or $\\pi$). This fact results in a ${\\mathbb{Z}}_2$ classification of such junctions with an associated duality. Current asymmetry measurements which are shown to be robust against electron-electron interactions are proposed to infer this topology.

    5. Origin of subgap current in an SIS junction

      SciTech Connect (OSTI)

      Suzuki, Toyoaki; Noguchi, Takashi; Matsuo, Hiroshi [National Institutes of Natural Sciences/National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo, 181-8588 (Japan)

      2009-12-16

      According to the BCS theory, the subgap current in an SIS junction is reduced exponentially as the temperature decreases. However, experimentally, the reduction is saturated below a certain temperature. This phenomenon was a bottleneck in the development of sensitive SIS photon detectors with NEP of 10{sup -19} W/{radical}(Hz) at 650 GHz, because the NEP is limited by the shot noise in the subgap current. To investigate the origin of the residual subgap current under various temperatures we have measured I-V curves of a Nb/Al-AlN/Nb junction. Obtained I-V curves have been reproduced by a model: single-and two-particle tunneling under reduced quasiparticle lifetime. Our result suggests that increasing the lifetime is essential to reduce the subgap current. One of possible methods to increase the lifetime is to form an epitaxial Nb film.

    6. Strain designed Josephson $?$ junction qubits with topological insulators

      E-Print Network [OSTI]

      Colin Benjamin

      2015-06-23

      A Josephson qubit is designed via the application of a tensile strain to a topological insulator surface sandwiched between two s-wave superconductors. The strain applied leads to a shift in the Dirac point without changing the pre-existing conducting states, on the surface of a topological insulator. Strain applied can be tuned to form a $\\pi$ junction in such a structure. Combining two such junctions in a ring architecture leads to the ground state of the ring being in doubly degenerate state- the "0" and "1" states of a qubit. A qubit designed this way is quite easily controlled via the tunable strain applied. We report on the conditions necessary to design such a qubit. Finally the operating time of a single qubit phase gate is derived.

    7. Grain boundary and triple junction diffusion in nanocrystalline copper

      SciTech Connect (OSTI)

      Wegner, M. Leuthold, J.; Peterlechner, M.; Divinski, S. V.; Song, X.; Wilde, G.

      2014-09-07

      Grain boundary and triple junction diffusion in nanocrystalline Cu samples with grain sizes, ?d?, of ?35 and ?44?nm produced by spark plasma sintering were investigated by the radiotracer method using the {sup 63}Ni isotope. The measured diffusivities, D{sub eff}, are comparable with those determined previously for Ni grain boundary diffusion in well-annealed, high purity, coarse grained, polycrystalline copper, substantiating the absence of a grain size effect on the kinetic properties of grain boundaries in a nanocrystalline material at grain sizes d???35?nm. Simultaneously, the analysis predicts that if triple junction diffusion of Ni in Cu is enhanced with respect to the corresponding grain boundary diffusion rate, it is still less than 500?D{sub gb} within the temperature interval from 420?K to 470?K.

    8. Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells

      SciTech Connect (OSTI)

      Mintairov, S. A. Andreev, V. M.; Emelyanov, V. M.; Kalyuzhnyy, N. A.; Timoshina, N. K.; Shvarts, M. Z.; Lantratov, V. M.

      2010-08-15

      A technique for determining a minority carrier's diffusion length in photoactive III-V layers of solar cells by approximating their spectral characteristics is presented. Single-junction GaAs, Ge and multi-junction GaAs/Ge, GaInP/GaAs, and GaInP/GaInAs/Ge solar cells fabricated by hydride metal-organic vapor-phase epitaxy (H-MOVPE) have been studied. The dependences of the minority carrier diffusion length on the doping level of p-Ge and n-GaAs are determined. It is shown that the parameters of solid-state diffusion of phosphorus atoms to the p-Ge substrate from the n-GaInP nucleation layer are independent of the thickness of the latter within 35-300 nm. It is found that the diffusion length of subcells of multijunction structures in Ga(In)As layers is smaller in comparison with that of single-junction structures.

    9. Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes

      DOE Patents [OSTI]

      Tansu, Nelson; Zhao, Hongping; Zhang, Jing; Liu, Guangyu

      2014-04-01

      A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

    10. Joint measurement of current-phase relations and transport properties of hybrid junctions using a three junctions superconducting quantum interference device

      SciTech Connect (OSTI)

      Basset, J.; Delagrange, R.; Weil, R.; Kasumov, A.; Bouchiat, H.; Deblock, R.

      2014-07-14

      We propose a scheme to measure both the current-phase relation and differential conductance dI/dV of a superconducting junction, in the normal and the superconducting states. This is done using a dc Superconducting Quantum Interference Device with two Josephson junctions in parallel with the device under investigation and three contacts. As a demonstration, we measure the current-phase relation and dI/dV of a small Josephson junction and a carbon nanotube junction. In this latter case, in a regime where the nanotube is well conducting, we show that the non-sinusoidal current phase relation we find is consistent with the theory for a weak link, using the transmission extracted from the differential conductance in the normal state. This method holds great promise for future investigations of the current-phase relation of more exotic junctions.

    11. Environmental assessment of facility operations at the U.S. Department of Energy Grand Junction Projects Office, Grand Junction, Colorado

      SciTech Connect (OSTI)

      1996-06-01

      The US Department of Energy (DOE) has prepared a sitewide environmental assessment (EA) of the proposed action to continue and expand present-day activities on the DOE Grand Junction Projects Office (GJPO) facility in Grand Junction, Colorado. Because DOE-GJPO regularly proposes and conducts many different on-site activities, DOE decided to evaluate these activities in one sitewide EA rather than in multiple, activity-specific documents. On the basis of the information and analyses presented in the EA, DOE has determined that the proposed action does not constitute a major Federal action significantly affecting the quality of the human environment, as defined by the National Environmental Policy Act (NEPA) of 1969. Therefore, preparation of an environmental impact statement is not required for facility operations, and DOE is issuing this Finding of No Significant Impact (FONSI).

    12. Multiple density layered insulator

      DOE Patents [OSTI]

      Alger, Terry W. (Tracy, CA)

      1994-01-01

      A multiple density layered insulator for use with a laser is disclosed wh provides at least two different insulation materials for a laser discharge tube, where the two insulation materials have different thermoconductivities. The multiple layer insulation materials provide for improved thermoconductivity capability for improved laser operation.

    13. Literature and data review for the surface-water pathway: Columbia River and adjacent coastal areas

      SciTech Connect (OSTI)

      Walters, W.H.; Dirkes, R.L.; Napier, B.A.

      1992-04-01

      As part of the Hanford Environmental Dose Reconstruction Project, Pacific Northwest Laboratory reviewed literature and data on radionuclide concentrations and distribution in the water, sediment, and biota of the Columbia River and adjacent coastal areas. Over 600 documents were reviewed including Hanford reports, reports by offsite agencies, journal articles, and graduate theses. Certain radionuclide concentration data were used in preliminary estimates of individual dose for the 1964--1966 time period. This report summarizes the literature and database review and the results of the preliminary dose estimates.

    14. A study of the influence of boron diffusion sources on the material and electrical characteristics of silicon p-n junctions 

      E-Print Network [OSTI]

      Huang, Kuan-Chun Andrew

      1976-01-01

      is . he sheet resistance x. is the junc. ion dep. h. This average ccnductivity is then applied to Irvin's cu ve cr a p-+yoe Gaussian layer in silicon to obtain the surface concentration. Impurity Profile Incremental etching is a technique... for removing thin sections of silicon by a timed etch in a PNO -HF mixture (23). It is a relatively rough but quick technique to determine the impurity profile of a deep junction. A volume mixture of 2$ HF, 98fo HNO is experimentally determined to be best...

    15. GaInNAs Junctions for Next-Generation Concentrators: Progress and Prospects

      SciTech Connect (OSTI)

      Friedman, D. J.; Ptak, A. J.; Kurtz, S. R.; Geisz, J. F.; Kiehl, J.

      2005-08-01

      We discuss progress in the development of GaInNAs junctions for application in next-generation multijunction concentrator cells. A significant development is the demonstration of near-100% internal quantum efficiencies in junctions grown by molecular-beam epitaxy. Testing at high currents validates the compatibility of these devices with concentrator operation. The efficiencies of several next-generation multijunction structures incorporating these state-of-the-art GaInNAs junctions are projected.

    16. Comment on "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"

      E-Print Network [OSTI]

      Scully, Marlan O

      2010-01-01

      This is a comment on PRL paper by A.P. Kirk "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"

    17. Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions R. M. Feenstra*

      E-Print Network [OSTI]

      Feenstra, Randall

      -insulator-graphene (GIG) tunnel junctions. * feenstra@cmu.edu djena@nd.edu ggu1@utk.edu Published in J. Appl. Phys. 111

    18. SU-E-T-426: Dose Delivery Accuracy in Breast Field Junction for...

      Office of Scientific and Technical Information (OSTI)

      distribution along the field junction in a half beam irradiation technique for breast cancer patients receiving radiation to the breast or chest wall (CW) and the supraclavicular...

    19. Adjacency Matrix Based Energy Efficient Scheduling using S-MAC Protocol in Wireless Sensor Networks

      E-Print Network [OSTI]

      Singh, Shweta

      2012-01-01

      Communication is the main motive in any Networks whether it is Wireless Sensor Network, Ad-Hoc networks, Mobile Networks, Wired Networks, Local Area Network, Metropolitan Area Network, Wireless Area Network etc, hence it must be energy efficient. The main parameters for energy efficient communication are maximizing network lifetime, saving energy at the different nodes, sending the packets in minimum time delay, higher throughput etc. This paper focuses mainly on the energy efficient communication with the help of Adjacency Matrix in the Wireless Sensor Networks. The energy efficient scheduling can be done by putting the idle node in to sleep node so energy at the idle node can be saved. The proposed model in this paper first forms the adjacency matrix and broadcasts the information about the total number of existing nodes with depths to the other nodes in the same cluster from controller node. When every node receives the node information about the other nodes for same cluster they communicate based on the s...

    20. Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions

      SciTech Connect (OSTI)

      Jeong, J. H.; Endoh, T.; Kim, Y.; Kim, W. K.; Park, S. O.

      2014-05-07

      To identify the degradation mechanism in magnetic tunnel junctions (MTJs) using hydrogen, the properties of the MTJs were measured by applying an additional hydrogen etch process and a hydrogen plasma process to the patterned MTJs. In these studies, an additional 50?s hydrogen etch process caused the magnetoresistance (MR) to decrease from 103% to 14.7% and the resistance (R) to increase from 6.5?k? to 39?k?. Moreover, an additional 500?s hydrogen plasma process decreased the MR from 103% to 74% and increased R from 6.5?k? to 13.9?k?. These results show that MTJs can be damaged by the hydrogen plasma process as well as by the hydrogen etch process, as the atomic bonds in MgO may break and react with the exposed hydrogen gas. Compounds such as MgO hydrate very easily. We also calculated the damaged layer width (DLW) of the patterned MTJs after the hydrogen etching and plasma processes, to evaluate the downscaling limitations of spin-transfer-torque magnetic random-access memory (STT-MRAM) devices. With these calculations, the maximum DLWs at each side of the MTJ, generated by the etching and plasma processes, were 23.8?nm and 12.8?nm, respectively. This result validates that the hydrogen-based MTJ patterning processes cannot be used exclusively in STT-MRAMs beyond 20?nm.

    1. Electrical and photovoltaic properties of CdTe/ZnTe n-i-p junctions grown by molecular beam epitaxy

      SciTech Connect (OSTI)

      Zielony, E., E-mail: eunika.zielony@pwr.edu.pl; P?aczek-Popko, E.; Racino, A.; Gumienny, Z. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Olender, K.; Wosi?ski, T.; Karczewski, G.; Chusnutdinow, S. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

      2014-06-28

      Preliminary studies have been performed on photoelectrical properties of CdTe/ZnTe n-i-p junctions grown using the molecular beam epitaxy technique. Photovoltaic properties of the cells have been investigated by the measurements of current-voltage (I-V) characteristics under 1-sun illumination. I-V characteristics yield efficiencies of the cells varying from 3.4% to 4.9%. The low efficiency can be due to the presence of electrically active defects. In order to study the origin of defects in CdTe/ZnTe photovoltaic junctions, space charge techniques (C-V and deep level transient spectroscopy (DLTS)) have been applied. From the C-V measurements, a doping profile was calculated confirming charge accumulation in the i-CdTe layer. The results of the DLTS studies revealed the presence of four traps within a temperature range from 77–420?K. Three of them with activation energies equal to 0.22 eV, 0.45?eV, and 0.78?eV have been ascribed to the hole traps present in the i-CdTe material and their possible origin has been discussed. The fourth, high-temperature DLTS peak observed at ?350?K has been attributed to extended defects as its amplitude and temperature position depends on the value of the filling pulse width. It is assumed that the defects related to the trap are either located in the i-CdTe layer or at the i-CdTe/ZnTe interface. However, it was found that the trap exhibits twofold nature: it behaves as a majority or as a minority trap, depending on the filling pulse height, which is a characteristic feature of recombination centers. This trap is presumably responsible for the low efficiency of the cells.

    2. Front contact solar cell with formed electrically conducting layers on the front side and backside

      DOE Patents [OSTI]

      Cousins, Peter John

      2012-06-26

      A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell.

    3. Dynamics of Josephson junction systems in the computational subspace

      E-Print Network [OSTI]

      Wang Xiang-Bin; Matsumoto Keiji; Fan Heng; Y. Nakamura

      2001-12-05

      The quantum dynamics of the Josephson junction system in the computational subspace is investigated. A scheme for the controlled not operation is given for two capasitively coupled SQUIDs. In this system, there is no systematic error for the two qubit operation. For the inductively coupled SQUIDs, the effective Hamiltonian causes systematic errors in the computational subspace for the two qubit operation. Using the purterbation theory, we construct a more precise effective Hamiltonian. This new effective Hamiltonian reduces the systematic error to the level much lower than the threshold of the fault resilent quantum computation.

    4. Essex Junction, Vermont: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH JumpEllenville,Power Corp Jump to:SIBRErwin,CompanyVirginia:Junction,

    5. Iron Junction, Minnesota: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy ResourcesOrder at 8, 13RenewableIrem Geothermal Power PlantUtah:Junction,

    6. Princeton Junction, New Jersey: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975)Energy Technology JumpWilliam County, Virginia: EnergyJunction,

    7. Pacific Junction, Iowa: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio Program | OpenWisconsin:NewOverPPSEnergyFuel Cell CorpJunction,

    8. Grand Junction, Colorado, Processing Site and Disposal Sites Fact Sheet

      Office of Legacy Management (LM)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the t-) S/,,5 'a C O M P R E H E N S I551Grand Junction,

    9. Apache Junction, Arizona: Energy Resources | Open Energy Information

      Open Energy Info (EERE)

      AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowaWisconsin: EnergyYork Jump| Open EnergyNew Jersey:AntiguaAnyangJunction,

    10. Spontaneous Ferroelectric Order in a Bent-Core Smectic Liquid Crystal of Fluid Orthorhombic Layers

      SciTech Connect (OSTI)

      R Reddy; C Zhu; R Shao; E Korblova; T Gong; Y Shen; M Glaser; J Maclennan; D Walba; N Clark

      2011-12-31

      Macroscopic polarization density, characteristic of ferroelectric phases, is stabilized by dipolar intermolecular interactions. These are weakened as materials become more fluid and of higher symmetry, limiting ferroelectricity to crystals and to smectic liquid crystal stackings of fluid layers. We report the SmAP{sub F}, the smectic of fluid polar orthorhombic layers that order into a three-dimensional ferroelectric state, the highest-symmetry layered ferroelectric possible and the highest-symmetry ferroelectric material found to date. Its bent-core molecular design employs a single flexible tail that stabilizes layers with untilted molecules and in-plane polar ordering, evident in monolayer-thick freely suspended films. Electro-optic response reveals the three-dimensional orthorhombic ferroelectric structure, stabilized by silane molecular terminations that promote parallel alignment of the molecular dipoles in adjacent layers.

    11. Fabrication of contacts for silicon solar cells including printing burn through layers

      SciTech Connect (OSTI)

      Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

      2014-06-24

      A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

    12. In this thesis, our goal was to fabricate Josephson junction that can be stably processed at 300C or higher. With the purpose of integrating Josephson junction fabrication with current semiconductor circuit fabrication

      E-Print Network [OSTI]

      /Hf-HfOx/Nb superconductor tunnel Josephson junctions that can be grown or processed at elevated temperatures. Also elevated

    13. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint

      SciTech Connect (OSTI)

      Geisz, J. F.; Kurtz, S. R.; Wanlass, M. W.; Ward, J. S.; Duda, A.; Friedman, D. J.; Olson, J. M.; McMahon, W. E.; Moriarty, T. E.; Kiehl, J. T.; Romero, M. J.; Norman, A. G.; Jones, K. M.

      2008-05-01

      We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.

    14. Layered electrode for electrochemical cells

      DOE Patents [OSTI]

      Swathirajan, Swathy (West Bloomfield, MI); Mikhail, Youssef M. (Sterling Heights, MI)

      2001-01-01

      There is provided an electrode structure comprising a current collector sheet and first and second layers of electrode material. Together, the layers improve catalyst utilization and water management.

    15. Molecular Rectification in a Metal-Insulator-Metal Junction Based on Self-Assembled Monolayers

      E-Print Network [OSTI]

      Jacobs, Heiko O.

      Molecular Rectification in a Metal-Insulator-Metal Junction Based on Self-Assembled Monolayers Received April 8, 2002 Abstract: An electrical junction formed by mechanical contact between two self-assembled. The hypothesis underlying this design is based on the relative energies of the highest occupied molecular orbital

    16. Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor quantum dot nanocrystals as light harvesters

      E-Print Network [OSTI]

      Demir, Hilmi Volkan

      Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor- and Nano-systems Programme, Singapore-MIT Alliance, Singapore 117576 Received 22 June 2010; accepted 10 hybridized, radial p-n junction based, nanopillar solar cells with photovoltaic performance enhanced

    17. Holographic model of hybrid and coexisting s-wave and p-wave Josephson junction

      E-Print Network [OSTI]

      Shuai Liu; Yong-Qiang Wang

      2015-10-27

      In this paper the holographic model for hybrid and coexisting s-wave and p-wave Josephson junction is constructed by a triplet charged scalar field coupled with a non-Abelian $SU(2)$ gauge fields in (3+1)-dimensional AdS spacetime. Depending on the value of chemical potential $\\mu$, one can show that there are four types of junctions (s+p-N-s+p, s+p-N-s, s+p-N-p and s-N-p). We show that DC current of all the hybrid and coexisting s-wave and p-wave junctions is proportional to the sine of the phase difference across the junction. In addition, the maximum current and the total condensation decays with the width of junction exponentially, respectively. For s+p-N-s and s-N-p junction, the maximum current decreases with growing temperature. Moreover, we find that the maximum current increases with growing temperature for s+p-N-s+p and s+p-N-p junction, which is in the different manner as the behaviour of s+p-N-s and s-N-p junction.

    18. Novel applications of the Josephson Effect: Ferroelectric Characterisation and Capacitively Shunted Grain Boundary Junctions

      E-Print Network [OSTI]

      McBrien, Philip Francis

      This thesis describes applications of the ac Josephson effect. Firstly, results are presented from bicrystal grain boundary YBa2Cu3O7-d junctions shunted with a YBa2Cu3O7-d/SrTiO3/Au multilayer external capacitor, to make a junction with a...

    19. Physical model of back line-contact front-junction solar cells Andres Cuevas

      E-Print Network [OSTI]

      electron-collector region is made by thermal dif- fusion of phosphorus, and the localized metal contactsPhysical model of back line-contact front-junction solar cells Andres Cuevas Citation: J. Appl-junction solar cells Andres Cuevasa) Research School of Engineering, The Australian National University, Canberra

    20. Junction conditions in General Relativity with spin sources

      E-Print Network [OSTI]

      Alex Giacomini; Ricardo Troncoso; Steven Willison

      2006-05-16

      The junction conditions for General Relativity in the presence of domain walls with intrinsic spin are derived in three and higher dimensions. A stress tensor and a spin current can be defined just by requiring the existence of a well defined volume element instead of an induced metric, so as to allow for generic torsion sources. In general, when the torsion is localized on the domain wall, it is necessary to relax the continuity of the tangential components of the vielbein. In fact it is found that the spin current is proportional to the jump in the vielbein and the stress-energy tensor is proportional to the jump in the spin connection. The consistency of the junction conditions implies a constraint between the direction of flow of energy and the orientation of the spin. As an application, we derive the circularly symmetric solutions for both the rotating string with tension and the spinning dust string in three dimensions. The rotating string with tension generates a rotating truncated cone outside and a flat space-time with inevitable frame dragging inside. In the case of a string made of spinning dust, in opposition to the previous case no frame dragging is present inside, so that in this sense, the dragging effect can be "shielded" by considering spinning instead of rotating sources. Both solutions are consistently lifted as cylinders in the four-dimensional case.

    1. Josephson junction of non-Abelian superconductors and non-Abelian Josephson vortices

      E-Print Network [OSTI]

      Muneto Nitta

      2015-08-06

      A Josephson junction is made of two superconductors sandwiching an insulator, and a Josephson vortex is a magnetic vortex (flux tube) absorbed into the Josephson junction, whose dynamics can be described by the sine-Gordon equation. In a field theory framework, a flexible Josephson junction was proposed, in which the Josephson junction is represented by a domain wall separating two condensations and a Josephson vortex is a sine-Gordon soliton in the domain wall effective theory. In this paper, we propose a Josephson junction of non-Abelian color superconductors, that is described by a non-Abelian domain wall, and show that a non-Abelian vortex (color magnetic flux tube) absorbed into it is a non-Abelian Josephson vortex represented as a non-Abelian sine-Gordon soliton in the domain wall effective theory, that is the $U(N)$ principal chiral model.

    2. Josephson junction of non-Abelian superconductors and non-Abelian Josephson vortices

      E-Print Network [OSTI]

      Nitta, Muneto

      2015-01-01

      A Josephson junction is made of two superconductors sandwiching an insulator, and a Josephson vortex is a magnetic vortex absorbed into the Josephson junction, whose dynamics can be described by the sine-Gordon equation. In a field theory framework, a flexible Josephson junction was proposed, in which the Josephson junction is represented by a domain wall separating two condensations and a Josephson vortex is a sine-Gordon soliton in the domain wall effective theory. In this paper, we propose a Josephson junction of non-Abelian color superconductors, that is described by a non-Abelian domain wall, and show that a non-Abelian vortex (color magnetic flux tube) absorbed into it is a non-Abelian Josephson vortex represented as a non-Abelian sine-Gordon soliton in the domain wall effective theory.

    3. E-cadherin junction formation involves an active kinetic nucleation process

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng -han; Harrison, Oliver J.; Song, Hang; Smith, Adam W.; Huang, William Y. C.; Lin, Wan -Chen; Guo, Zhenhuan; Padmanabhan, Anup; et al

      2015-08-19

      Epithelial (E)-cadherin-mediated cell–cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit ?-catenin and exhibit remodeled cortical actin. Observations suggest thatmore »the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role.« less

    4. Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells

      E-Print Network [OSTI]

      Nitrogen-doped cuprous oxide as a p-type hole- transporting layer in thin-film solar cells Yun Seog-transparent tunnel junction to a back-contact. We fabricate Cu2O-based heterojunction thin-film solar cells-factor and power conversion efficiency of the solar cells. Cu2O:N thin-films may also be useful in other

    5. All-optical half-adder based on photonic mode junction Xianji Piao, Sunkyu Yu, and Namkyoo Park*

      E-Print Network [OSTI]

      Park, Namkyoo

      with the bi-level dynamic mode-conversion across the junction. 1. Introduction Junction structures, which is the core building block for the Arithmetic Logic Unit. Different with previous works in the photonic domain conversion. 2. Design Strategy and Results Fig. 1. Multi-junction realization of monolithic half-adder; (a

    6. MODELING OF TRIPLE JUNCTION A-SI SOLAR CELLS USING ASA: ANALYSIS OF DEVICE PERFORMANCE UNDER VARIOUS FAILURE SCENARIOS

      E-Print Network [OSTI]

      Deng, Xunming

      solar cells and/or the comparison of these predicted results with real multi-junction devices have beenMODELING OF TRIPLE JUNCTION A-SI SOLAR CELLS USING ASA: ANALYSIS OF DEVICE PERFORMANCE UNDER, University of Toledo, Toledo, OH 43606 ABSTRACT Triple junction a-Si solar cells have been modeled

    7. Nanobonding for Multi-Junction Solar Cells at Room Temperature T. Yu, M. M. R. Howlader*, F. Zhang, M. Bakr

      E-Print Network [OSTI]

      Howlader, Matiar R

      Nanobonding for Multi-Junction Solar Cells at Room Temperature T. Yu, M. M. R. Howlader*, F. Zhang of the interfacial properties of Si/GaAs indicates its potential use on the fabrication of multi-junction solar cells types of solar cells being studied, semiconductor multi-junction solar cells are gaining special

    8. Cooperative Research between NREL and Solar Junction Corp: Cooperative Research and Development Final Report, CRADA Number CRD-08-306

      SciTech Connect (OSTI)

      Friedman, D.

      2015-03-01

      NREL and Solar Junction Corp. will perform cooperative research on materials and devices that are alternatives to standard approaches with the goal of improving solar cell efficiency while lowering cost. The general purpose of this work is to model the performance of a multi-junction concentrator cell of Solar Junction, Inc. design under normal concentrator operating conditions.

    9. Layered semiconductor neutron detectors

      DOE Patents [OSTI]

      Mao, Samuel S; Perry, Dale L

      2013-12-10

      Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

    10. Contactless electronic transport in a bio-molecular junction

      SciTech Connect (OSTI)

      Hossain, Faruque M., E-mail: fhossain@unimelb.edu.au; Al-Dirini, Feras; Skafidas, Efstratios [Department of Electrical and Electronic Engineering, The University of Melbourne, Parkville 3010 (Australia); Center for Neural Engineering (CfNE), The University of Melbourne, Parkville 3010 (Australia)

      2014-07-28

      Molecular electronics hold promise for next generation ultra-low power, nano-scale integrated electronics. The main challenge in molecular electronics is to make a reliable interface between molecules and metal electrodes. Interfacing metals and molecules detrimentally affects the characteristics of nano-scale molecular electronic devices. It is therefore essential to investigate alternative arrangements such as contact-less tunneling gaps wherever such configurations are feasible. We conduct ab initio density functional theory and non-equilibrium Green's functions calculations to investigate the transport properties of a biocompatible glycine molecular junction. By analyzing the localized molecular orbital energy distributions and transmission probabilities in the transport-gap, we find a glycine molecule confined between two gold electrodes, without making a contact, is energetically stable and possesses high tunneling current resembling an excellent ohmic-like interface.

    11. Chemical Fabrication of Heterometallic Nanogaps for Molecular Transport Junctions

      SciTech Connect (OSTI)

      Chen, Xiaodong; Yeganeh, Sina; Qin, Lidong; Li, Shuzhou; Xue, Can; Braunschweig, Adam B.; Schatz, George C.; Ratner, Mark A.; Mirkin, Chad A.

      2009-01-01

      We report a simple and reproducible method for fabricating heterometallic nanogaps, which are made of two different metal nanorods separated by a nanometer-sized gap. The method is based upon on-wire lithography, which is a chemically enabled technique used to synthesize a wide variety of nanowire-based structures (e.g., nanogaps and disk arrays). This method can be used to fabricate pairs of metallic electrodes, which exhibit distinct work functions and are separated by gaps as small as 2 nm. Furthermore, we demonstrate that a symmetric thiol-terminated molecule can be assembled into such heterometallic nanogaps to form molecular transport junctions (MTJs) that exhibit molecular diode behavior. Theoretical calculations demonstrate that the coupling strength between gold and sulfur (Au-S) is 2.5 times stronger than that of Pt-S. In addition, the structures form Raman hot spots in the gap, allowing the spectroscopic characterization of the molecules that make up the MTJs.

    12. Stability of winding cosmic wall lattices with X type junctions

      E-Print Network [OSTI]

      Brandon Carter

      2009-11-30

      This work confirms the stability of a class of domain wall lattice models that can produce accelerated cosmological expansion, with pressure to density ratio $w=-1/3$ at early times, and with $w=-2/3$ at late times when the lattice scale becomes large compared to the wall thickness. For walls of tension $T_{I}$, the relevant X type junctions could be unstable (for a sufficiently acute intersection angle $\\alpha$) against separation into a pair of Y type junctions joined by a compound wall, only if the tension $T_{II}$ of the latter were less than $2T_{I}$ (and for an approximately right-angled intersection if it were less that $\\sqrt{2} T_{I}$) which can not occur in the class considered here. In an extensive category of multicomponent scalar field models of forced harmonic (linear or non-linear) type it is shown how the relevant tension -- which is the same as the surface energy density $U$ of the wall -- can be calculated as the minimum (geodesic) distance between the relevant vacuum states as measured on the space of field values $\\Phi^i$ using a positive definite (Riemannian) energy metric $dU^2=\\tilde G_{ij} d\\Phi^i d\\Phi^j$ that is obtained from the usual kinetic metric (which is flat for a model with ordinary linear kinetic part) by application of a conformal factor proportional to the relevant potential function $V$. For suitably periodic potential functions there will be corresponding periodic configurations -- with parallel walls characterised by incrementation of a winding number -- in which the condition for stability of large scale bunching modes is shown to be satisfied automatically. It is suggested that such a configuration -- with a lattice lengthscale comparable to intergalactic separation distances -- might have been produced by a late stage of cosmological inflation.

    13. Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

      SciTech Connect (OSTI)

      Wang, Shouguo; Ward, R. C. C.; Zhang, Xiaoguang; Kohn, A.; Ma, Q. L.; Zhang, J.; Liu, H. F.; Han, Prof. X. F.

      2012-01-01

      Following predictions by first-principles theory of huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), measured magnetoresistance (MR) ratio about 200% at room temperature (RT) have been reported in MgO-based epitaxial MTJs. Recently, MR ratio of about 600% has been reported at RT in MgO-based amorphous MTJs with core structure of CoFeB/MgO/CoFeB grown by magnetron sputtering with amorphous CoFeB layers. The sputtered CoFeB/MgO/CoFeB MTJs shows a great potential application in spintronic devices. Although epitaxial structure will probably not be used in devices, it remains an excellent model system to compare theoretical calculations with experimental results and to enhance our understanding of the spin dependent tunneling. Both theoretical calculations and experimental results clearly indicate that the interfacial structure plays a crucial role on coherent tunneling across single crystalMgO barrier, especially in epitaxial MgO-based MTJs grown by molecular beam epitaxy (MBE). Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism have been used for interface characterization. However, no consistent viewpoint has been reached, and this is still an open issue. In this article, recent studies on the interface characterization in MgO-based epitaxial MTJs will be introduced, with a focus on research by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and spin dependent tunneling spectroscopy.

    14. Reduced low frequency noise in electron beam evaporated MgO magnetic tunnel junctions

      SciTech Connect (OSTI)

      Diao, Z.; Feng, J. F.; Kurt, H.; Feng, G.; Coey, J. M. D. [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

      2010-05-17

      We compare low frequency noise in magnetic tunnel junctions with MgO barriers prepared by electron-beam evaporation with those prepared by radiofrequency sputtering, both showing a high tunneling magnetoresistance. The normalized noise parameter in the parallel state of junctions with evaporated barriers is at least one order of magnitude lower than that in junctions with sputtered barriers, and exhibits a weaker bias dependence. The lowest normalized noise is in the 10{sup -11} mum{sup 2} range. A lower density of oxygen vacancies acting as charge trap states in the evaporated MgO is responsible for the lower noise.

    15. Realistic-contact-induced enhancement of rectifying in carbon-nanotube/graphene-nanoribbon junctions

      SciTech Connect (OSTI)

      Zhang, Xiang-Hua [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China); Department of Electrical and Information Engineering, Hunan Institute of Engineering, Xiangtan 411101 (China); Li, Xiao-Fei, E-mail: xfli@theochem.kth.se [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Ling-Ling, E-mail: llwang@hnu.edu.cn; Xu, Liang; Luo, Kai-Wu [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China)

      2014-03-10

      Carbon-nanotube/graphene-nanoribbon junctions were recently fabricated by the controllable etching of single-walled carbon-nanotubes [Wei et al., Nat. Commun. 4, 1374 (2013)] and their electronic transport properties were studied here. First principles results reveal that the transmission function of the junctions show a heavy dependence on the shape of contacts, but rectifying is an inherent property which is insensitive to the details of contacts. Interestingly, the rectifying ratio is largely enhanced in the junction with a realistic contact and the enhancement is insensitive to the details of contact structures. The stability of rectifying suggests a significant feasibility to manufacture realistic all-carbon rectifiers in nanoelectronics.

    16. Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

      E-Print Network [OSTI]

      Dunin-Borkowski, Rafal E.

      -bonded multi-junction solar cells Dietrich Häussler a , Lothar Houben b , Stephanie Essig c , Mert Kurttepeli online 20 July 2013 Keywords: Multi-junction solar cell Wafer bonding Interfaces Aberration corrected and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells. Multi-junction solar

    17. Visualization of the Interaction of Multiple Sclerosis Lesions with Adjacent White Matter Fibers Using Streamtubes and Streamsurfaces

      E-Print Network [OSTI]

      Laidlaw, David

      Visualization of the Interaction of Multiple Sclerosis Lesions with Adjacent White Matter Fibers of Multiple Sclerosis. N Engl J Med, 338:278­285, 1998. [4] Ferguson et al. Axonal damage in acute. Brain, 120 matter lesion volume and distribution in multiple sclerosis. Brain, 123(9):1845­9, September 2000. [6

    18. Adjacent Channel Interference in Dual-radio 802.11a Nodes and Its Impact on Multi-hop Networking

      E-Print Network [OSTI]

      Kung, H. T.

      -mask requirements set by the IEEE 802.11 standard, the multi-hop performance is still significantly affected by ACI evaluate the performance impact of adjacent chan- nel interference (ACI) in multi-hop wireless networks a spectrum analyzer with a signal combiner to quantify ACI under various conditions and propose solutions

    19. Method and Apparatus for Remote Delivery and Manipulation of a Miniature Tool Adjacent a Work Piece in a Restricted Space

      DOE Patents [OSTI]

      Sale, Christopher H.; Kaltenbaugh, Daniel R.

      2004-08-10

      An apparatus for remote delivery and manipulation of a miniature tool adjacent a work piece in a restricted space, includes a tool camer, a camage for manipulating the tool carrier relative to the work piece, a first actuator for operating the carnage, and an optional remote secondary operating actuator for operating the first actuator.

    20. AGE, GROWTH, SEX RATIO, AND MATURITY OF THE WHITEFISH IN CENTRAL GREEN BAY AND ADJACENT WATERS OF LAKE MICHIGAN

      E-Print Network [OSTI]

      lighter than those from Green Bay. Weight increased to the 3.386 power of length in Green Bay (combinedAGE, GROWTH, SEX RATIO, AND MATURITY OF THE WHITEFISH IN CENTRAL GREEN BAY AND ADJACENT WATERS from five localities In central Green Bay in 1948-49 and 1951-52 and 204 in a single 1948 collection

    1. Anatomy of the visual word form area: Adjacent cortical circuits and long-range white matter connections

      E-Print Network [OSTI]

      Wandell, Brian A.

      Anatomy of the visual word form area: Adjacent cortical circuits and long-range white matter, United States a r t i c l e i n f o Article history: Available online xxxx Keywords: Visual word form t Circuitry in ventral occipital-temporal cortex is essential for seeing words. We analyze the circuitry

    2. Thermal Transitions in Layer-By-Layer Assemblies 

      E-Print Network [OSTI]

      Sung, Choonghyun

      2014-10-13

      Thermal transitions in layer-by-layer (LbL) assemblies were investigated under dry and hydrated conditions. In the dry state, the effects of film thickness and the film deposition method on the glass transition temperature (Tg) were studied...

    3. Layer-by-layer assembly in confined geometries

      E-Print Network [OSTI]

      DeRocher, Jonathan P

      2011-01-01

      The fundamental nature of layer-by-layer (LbL) assembly in confined geometries was investigated for a number of different chemical systems. The first part of this thesis concerns the modification of microfluidic and ...

    4. Ion transport and structure of layer-by-layer assemblies

      E-Print Network [OSTI]

      Lutkenhaus, Jodie Lee

      2007-01-01

      Layer-by-layer (LbL) films of various architectures were examined as potential solid state electrolytes for electrochemical systems (e.g. batteries and fuel cells). The relationship between materials properties and ion ...

    5. Engineering electroresponsive layer-by-layer thin films

      E-Print Network [OSTI]

      Schmidt, Daniel J., Ph. D. Massachusetts Institute of Technology

      2011-01-01

      Electroresponsive layer-by-layer (LbL) polymer films and polymer nanocomposite films were investigated as model systems for electrically triggered drug delivery applications and "mechanomutable" surface coating applications. ...

    6. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

      E-Print Network [OSTI]

      Mariani, Giacomo

      2013-01-01

      photovoltaics: cohesive optical and electrical investigation of the complete solarphotovoltaics represents an emerging alternative to standard solarPhotovoltaics: Photon Management and Junction Engineering for Next-Generation Solar

    7. EFFECT OF PREPARATION PARAMETERS ON LIGHT SENSITIVITY IN SUPERCONDUCTIVE TUNNEL JUNCTIONS

      E-Print Network [OSTI]

      Paris-Sud XI, Université de

      , Italy Résumé. 2014 Des jonctions « tunnel » supraconductrices utilisant du sulfure de cadmium et du al. [17] have considered semiconductor barriers for low capacitance tunnel junctions. Light can be depo- sited in ultra high vacuum systems without fear of contamination. Work

    8. Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

      SciTech Connect (OSTI)

      Geisz, John F.; France, Ryan M.; Steiner, Myles A.; Friedman, Daniel J.; García, Iván

      2014-09-26

      Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be applied to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.

    9. Highly efficient organic multi-junction solar cells with a thiophene based donor material

      SciTech Connect (OSTI)

      Meerheim, Rico Körner, Christian; Leo, Karl

      2014-08-11

      The efficiency of organic solar cells can be increased by serial stacked subcells even upon using the same absorber material. For the multi-junction devices presented here, we use the small molecule donor material DCV5T-Me. The subcell currents were matched by optical transfer matrix simulation, allowing an efficiency increase from 8.3% for a single junction up to 9.7% for a triple junction cell. The external quantum efficiency of the subcells, measured under appropriate light bias illumination, is spectrally shifted due to the microcavity of the complete stack, resulting in a broadband response and an increased cell current. The increase of the power conversion efficiency upon device stacking is even stronger for large area cells due to higher influence of the resistance of the indium tin oxide anode, emphasizing the advantage of multi-junction devices for large-area applications.

    10. Dispersion Mechanisms of a Tidal River Junction in the Sacramento–San Joaquin Delta, California

      E-Print Network [OSTI]

      Gleichauf, Karla T.; Wolfram, Phillip J.; Monsen, Nancy E.; Fringer, Oliver B.; Monismith, Stephen G.

      2014-01-01

      a Tidal River Junction in the Sacramento–San Joaquin Delta,networks, such as in the Sacramento–San Joaquin River Delta,transport and fate in the Sacramento–San Joaquin delta using

    11. Back to the crossroads of Flatbush--the junction--student housing for Brooklyn College

      E-Print Network [OSTI]

      Campbell, Keith A. (Keith Anthony)

      1988-01-01

      The crossroads of Flatbush (often called The Junction) is a five point intersection of vehicular and pedestrian traffic. A crossroad where ethnic groups step beyond subtle neighborhood boundaries and merge to use public ...

    12. Spin-polarized tunneling in MgO-based tunnel junctions with superconducting electrodes

      E-Print Network [OSTI]

      Schebaum, Oliver

      We prepared magnetic tunnel junctions with one ferromagnetic and one superconducting Al–Si electrode. Pure cobalt electrodes were compared with a Co–Fe–B alloy and the Heusler compound Co[subscript 2]FeAl. The polarization ...

    13. Universal transport signatures of Majorana fermions in superconductor-Luttinger liquid junctions

      E-Print Network [OSTI]

      Universal transport signatures of Majorana fermions in superconductor-Luttinger liquid junctions, University of California, Irvine, CA 92697 3 Institute of Quantum Information, California Institute of Technology, Pasadena, CA 91125 4 Department of Physics, California Institute of Technology, Pasadena, CA

    14. Direct imaging of coherent quantum transport in graphene p?n?p junctions

      E-Print Network [OSTI]

      Herbschleb, E. D.; Puddy, R. K.; Marconcini, P.; Griffiths, J. P.; Jones, G. A. C.; Macucci, M.; Smith, C. G.; Connolly, M. R.

      2015-09-11

      We use electrostatic lithography to fabricate a graphene p-n-p junction and exploit the coherence of weakly confined Dirac quasiparticles to image the underlying scattering potential using low-temperature scanning gate microscopy. The tip...

    15. Compound Josephson-junction coupler for flux qubits with minimal crosstalk

      E-Print Network [OSTI]

      Harris, R.; Lanting, T.; Berkley, A. J.; Johansson, J.; Johnson, M. W.; Bunyk, P.; Ladizinsky, E.; Oh, T.; Han, Siyuan

      2009-08-20

      An improved tunable coupling element for building networks of coupled rf-superconducting quantum interference device (rf-SQUID) flux qubits has been experimentally demonstrated. This new form of coupler, based on the compound Josephson-junction rf...

    16. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

      SciTech Connect (OSTI)

      Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

      2006-01-01

      We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

    17. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

      DOE Patents [OSTI]

      Wanlass, Mark W. (Golden, CO)

      1994-01-01

      A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

    18. Caged Layer Management. 

      E-Print Network [OSTI]

      Cawley, W. O.; Quisenberry, J. H.; Allen, W. S.

      1966-01-01

      for the earnings to justify the investment. Construct Texas cage houses with special emphasis on layer comfort during the summer heat. But housing must also protect birds against the few severely cold winter days. When constructing a cage house, consider... cost is de- sired, do not confuse wit11 ligl~t or inferior type construction. A study of poultry houses damaged by severe weather indicates most damage results from not securely fastening studs to foundation. Figure 12. Plans for this 24-foot wide...

    19. Structured chaos in a devil's staircase of the Josephson junction

      SciTech Connect (OSTI)

      Shukrinov, Yu. M. [BLTP, JINR, Dubna, Moscow Region 141980 (Russian Federation); Botha, A. E., E-mail: bothaae@unisa.ac.za [Department of Physics, University of South Africa, Science Campus, Private Bag X6, Florida Park 1710 (South Africa); Medvedeva, S. Yu. [BLTP, JINR, Dubna, Moscow Region 141980 (Russian Federation); Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow Region 141700 (Russian Federation); Kolahchi, M. R. [Institute for Advanced Studies in Basic Sciences, P.O. Box 45195-1159, Zanjan (Iran, Islamic Republic of); Irie, A. [Department of Electrical and Electronic Systems Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya 321-8585 (Japan)

      2014-09-01

      The phase dynamics of Josephson junctions (JJs) under external electromagnetic radiation is studied through numerical simulations. Current-voltage characteristics, Lyapunov exponents, and Poincaré sections are analyzed in detail. It is found that the subharmonic Shapiro steps at certain parameters are separated by structured chaotic windows. By performing a linear regression on the linear part of the data, a fractal dimension of D?=?0.868 is obtained, with an uncertainty of ±0.012. The chaotic regions exhibit scaling similarity, and it is shown that the devil's staircase of the system can form a backbone that unifies and explains the highly correlated and structured chaotic behavior. These features suggest a system possessing multiple complete devil's staircases. The onset of chaos for subharmonic steps occurs through the Feigenbaum period doubling scenario. Universality in the sequence of periodic windows is also demonstrated. Finally, the influence of the radiation and JJ parameters on the structured chaos is investigated, and it is concluded that the structured chaos is a stable formation over a wide range of parameter values.

    20. Spin Josephson effect in topological superconductor-ferromagnet junction

      SciTech Connect (OSTI)

      Ren, C. D.; Wang, J.

      2014-03-21

      The composite topological superconductor (TS), made of one-dimensional spin-orbit coupled nanowire with proximity-induced s-wave superconductivity, is not a pure p-wave superconductor but still has a suppressed s-wave pairing. We propose to probe the spin texture of the p-wave pairing in this composite TS by examining possible spin supercurrents in an unbiased TS/ferromagnet junction. It is found that both the exchange-coupling induced and spin-flip reflection induced spin currents exist in the setup and survive even in the topological phase. We showed that besides the nontrivial p-wave pairing state accounting for Majorana Fermions, there shall be a trivial p-wave pairing state that contributes to spin supercurrent. The trivial p-wave pairing state is diagnosed from the mixing effect between the suppressed s-wave pairing and the topologically nontrivial p-wave pairing. The d vector of the TS is proved not to be rigorously perpendicular to the spin projection of p-wave pairings. Our findings are also confirmed by the Kitaev's p-wave model with a nonzero s-wave pairing.

    1. Multijunction photovoltaic device and fabrication method

      DOE Patents [OSTI]

      Arya, Rajeewa R. (Jamison, PA); Catalano, Anthony W. (Furlong, PA)

      1993-09-21

      A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

    2. Metal deposition using seed layers

      DOE Patents [OSTI]

      Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

      2013-11-12

      Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

    3. Buried oxide layer in silicon

      DOE Patents [OSTI]

      Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

      2001-01-01

      A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

    4. Environmental Performance Characterization of Atomic Layer Deposition

      E-Print Network [OSTI]

      Yuan, Chris; Dornfeld, David

      2008-01-01

      Rahtu and R. Gordon. “Atomic layer deposition of transitionoxide films grown by atomic layer deposition from iodide andand S. M. George. “Atomic layer deposition of ultrathin and

    5. Graphene Layer Growth: Collision of Migrating Five-MemberRings

      SciTech Connect (OSTI)

      Whitesides, Russell; Kollias, Alexander C.; Domin, Dominik; Lester Jr., William A.; Frenklach, Michael

      2005-12-02

      A reaction pathway is explored in which two cyclopenta groups combine on the zigzag edge of a graphene layer. The process is initiated by H addition to a five-membered ring, followed by opening of that ring and the formation of a six-membered ring adjacent to another five-membered ring. The elementary steps of the migration pathway are analyzed using density functional theory to examine the region of the potential energy surface associated with the pathway. The calculations are performed on a substrate modeled by the zigzag edge of tetracene. Based on the obtained energetics, the dynamics of the system are analyzed by solving the energy transfer master equations. The results indicate energetic and reaction-rate similarity between the cyclopenta combination and migration reactions. Also examined in the present study are desorption rates of migrating cyclopenta rings which are found to be comparable to cyclopenta ring migration.

    6. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

      SciTech Connect (OSTI)

      Gessert, T. A.

      2010-09-01

      Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

    7. Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction

      SciTech Connect (OSTI)

      Zide, J.M.O.; Kleiman-Shwarsctein, A.; Strandwitz, N.C.; Zimmerman, J.D.; Steenblock-Smith, T.; Gossard, A.C.; Forman, A.; Ivanovskaya, A.; Stucky, G.D.

      2006-04-17

      We report the molecular beam epitaxy growth of Al{sub 0.3}Ga{sub 0.7}As/GaAs multijunction solar cells with epitaxial, semimetallic ErAs nanoparticles at the interface of the tunnel junction. The states provided by these nanoparticles reduce the bias required to pass current through the tunnel junction by three orders of magnitude, and therefore drastically reduce the voltage losses in the tunnel junction. We have measured open-circuit voltages which are 97% of the sum of the constituent cells, which result in nearly double the efficiency of our multijunction cell with a conventional tunnel junction.

    8. Leakage pathway layer for solar cell

      DOE Patents [OSTI]

      Luan, Andy; Smith, David; Cousins, Peter; Sun, Sheng

      2015-12-01

      Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.

    9. Method of junction formation for CIGS photovoltaic devices

      DOE Patents [OSTI]

      Delahoy, Alan E.

      2006-03-28

      Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

    10. Method of junction formation for CIGS photovoltaic devices

      DOE Patents [OSTI]

      Delahoy, Alan E. (Rocky Hill, NJ)

      2010-01-26

      Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

    11. Oxygen-reducing catalyst layer

      DOE Patents [OSTI]

      O'Brien, Dennis P. (Maplewood, MN); Schmoeckel, Alison K. (Stillwater, MN); Vernstrom, George D. (Cottage Grove, MN); Atanasoski, Radoslav (Edina, MN); Wood, Thomas E. (Stillwater, MN); Yang, Ruizhi (Halifax, CA); Easton, E. Bradley (Halifax, CA); Dahn, Jeffrey R. (Hubley, CA); O'Neill, David G. (Lake Elmo, MN)

      2011-03-22

      An oxygen-reducing catalyst layer, and a method of making the oxygen-reducing catalyst layer, where the oxygen-reducing catalyst layer includes a catalytic material film disposed on a substrate with the use of physical vapor deposition and thermal treatment. The catalytic material film includes a transition metal that is substantially free of platinum. At least one of the physical vapor deposition and the thermal treatment is performed in a processing environment comprising a nitrogen-containing gas.

    12. Two-dimensional double layer in plasma in a diverging magnetic field

      SciTech Connect (OSTI)

      Saha, S. K.; Raychaudhuri, S.; Chowdhury, S.; Janaki, M. S.; Hui, A. K.

      2012-09-15

      Plasma created by an inductive RF discharge is allowed to expand along a diverging magnetic field. Measurement of the axial plasma potential profile reveals the formation of an electric double layer near the throat of the expansion chamber. An accelerated ion beam has been detected in the downstream region, confirming the presence of the double layer. The 2-D nature of the ion energy distribution function of the downstream plasma has been studied by a movable ion energy analyser, which shows that the beam radius increases along the axial distance. The 2-D structure of the plasma potential has been studied by a movable emissive probe. The existence of a secondary lobe in the contour plot of plasma equipotential is a new observation. It is also an interesting observation that the most diverging magnetic field line not intercepting the junction of the discharge tube and the expansion chamber has an electric field aligned with it.

    13. Layer-layer competition in multiplex complex networks

      E-Print Network [OSTI]

      Gómez-Gardeñes, Jesús; Gutiérrez, Gerardo; Arenas, Alex; Gómez, Sergio

      2015-01-01

      The coexistence of multiple types of interactions within social, technological and biological networks has moved the focus of the physics of complex systems towards a multiplex description of the interactions between their constituents. This novel approach has unveiled that the multiplex nature of complex systems has strong influence in the emergence of collective states and their critical properties. Here we address an important issue that is intrinsic to the coexistence of multiple means of interactions within a network: their competition. To this aim, we study a two-layer multiplex in which the activity of users can be localized in each of the layer or shared between them, favoring that neighboring nodes within a layer focus their activity on the same layer. This framework mimics the coexistence and competition of multiple communication channels, in a way that the prevalence of a particular communication platform emerges as a result of the localization of users activity in one single interaction layer. Our...

    14. Layer-by-Layer Assembly of Enzymes on Carbon Nanotubes

      SciTech Connect (OSTI)

      Wang, Jun; Liu, Guodong; Lin, Yuehe

      2008-06-01

      The use of Layer-by-layer techniques for immobilizing several types of enzymes, e.g. glucose oxidase (GOx), horse radish oxidases(HRP), and choline oxidase(CHO) on carbon nanotubes and their applications for biosenseing are presented. The enzyme is immobilized on the negatively charged CNT surface by alternatively assembling a cationic polydiallyldimethyl-ammonium chloride (PDDA) layer and a enzyme layer. The sandwich-like layer structure (PDDA/enzyme/PDDA/CNT) formed by electrostatic assembling provides a favorable microenvironment to keep the bioactivity of enzyme and to prevent enzyme molecule leakage. The morphologies and electrocatalytic acitivity of the resulted enzyme film were characterized using TEM and electrochemical techniques, respectively. It was found that these enzyme-based biosensors are very sensitive, selective for detection of biomolecules, e.g. glucose, choline.

    15. Distribution of Pd, Ag & U in the SiC Layer of an Irradiated TRISO Fuel Particle

      SciTech Connect (OSTI)

      Thomas M. Lillo; Isabella J. van Rooyen

      2014-08-01

      The distribution of silver, uranium and palladium in the silicon carbide (SiC) layer of an irradiated TRISO fuel particle was studied using samples extracted from the SiC layer using focused ion beam (FIB) techniques. Transmission electron microscopy in conjunction with energy dispersive x-ray spectroscopy was used to identify the presence of the specific elements of interest at grain boundaries, triple junctions and precipitates in the interior of SiC grains. Details on sample fabrication, errors associated with measurements of elemental migration distances and the distances migrated by silver, palladium and uranium in the SiC layer of an irradiated TRISO particle from the AGR-1 program are reported.

    16. A quantum optical valve in a nonlinear-linear resonator junction

      E-Print Network [OSTI]

      Eduardo Mascarenhas; Daniel Valente; Simone Montangero; Alexia Auffeves; Dario Gerace; M. Franca Santos

      2014-05-23

      Electronic diodes, which enable the rectification of an electrical energy flux, have played a crucial role in the development of current microelectronics after the invention of semiconductor p-n junctions. Analogously, signal rectification at specific target wavelengths has recently become a key goal in optical communication and signal processing. Here we propose a genuinely quantum device with the essential rectifying features being demonstrated in a general model of a nonlinear-linear junction of coupled resonators. It is shown that such a surprisingly simple structure is a versatile valve and may be alternatively tuned to behave as: a photonic diode, a single or two-photon rectified source turning a classical input into a quantum output depending on the input frequency, or a quantum photonic splitter. Given the relevance of non-reciprocal operations in integrated circuits, the nonlinear-linear junction realises a crucial building component in prospective quantum photonic applications.

    17. Nonequilibrium theory of a hot-electron bolometer with normal metal-insulator-superconductor tunnel junction

      SciTech Connect (OSTI)

      Golubev, Dmitri; Kuzmin, Leonid

      2001-06-01

      The operation of the hot-electron bolometer with normal metal-insulator-superconductor (NIS) tunnel junction as a temperature sensor is analyzed theoretically. The responsivity and the noise equivalent power (NEP) of the bolometer are obtained numerically for typical experimental parameters. Relatively simple approximate analytical expressions for these values are derived. The time constant of the device is also found. We demonstrate that the effect of the electron cooling by the NIS junction, which serves as a thermometer, can improve the sensitivity. This effect is also useful in the presence of the finite background power load. We discuss the effect of the correlation of the shot noise and the heat flow noise in the NIS junction. {copyright} 2001 American Institute of Physics.

    18. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

      SciTech Connect (OSTI)

      Werner, R.; Kleiner, R.; Koelle, D.; Petrov, A. Yu.; Davidson, B. A.; Mino, L. Alvarez

      2011-04-18

      We report resistance versus magnetic field measurements for a La{sub 0.65}Sr{sub 0.35}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.65}Sr{sub 0.35}MnO{sub 3} tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches {approx}1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

    19. Nonequilibrium transport through quantum-wire junctions and boundary defects for free massless bosonic fields

      E-Print Network [OSTI]

      Gaw?dzki, Krzysztof

      2015-01-01

      We consider a model of quantum-wire junctions where the latter are described by conformal-invariant boundary conditions of the simplest type in the multicomponent compactified massless scalar free field theory representing the bosonized Luttinger liquids in the bulk of wires. The boundary conditions result in the scattering of charges across the junction with nontrivial reflection and transmission amplitudes. The equilibrium state of such a system, corresponding to inverse temperature $\\beta$ and electric potential $V$, is explicitly constructed both for finite and for semi-infinite wires. In the latter case, a stationary nonequilibrium state describing the wires kept at different temperatures and potentials may be also constructed. The main result of the present paper is the calculation of the full counting statistics (FCS) of the charge and energy transfers through the junction in a nonequilibrium situation. Explicit expressions are worked out for the generating function of FCS and its large-deviations asym...

    20. Network layer Connectionless datagram forwarding

      E-Print Network [OSTI]

      (passed down by transport layer) into datagrams Destination host delivers segments up to transport layer by the cold war " If there exists a path, routers will put it in the routing table automatically Forwarding in the original order Physical Link Network Transport Application Physical Link Network Transport Application

    1. Apparatus and methods for impingement cooling of an undercut region adjacent a side wall of a turbine nozzle segment

      DOE Patents [OSTI]

      Burdgick, Steven Sebastian (Schenectady, NY); Itzel, Gary Michael (Simpsonville, SC)

      2001-01-01

      A gas turbine nozzle segment has outer and inner bands. Each band includes a side wall, a cover and an impingement plate between the cover and nozzle wall defining two cavities on opposite sides of the impingement plate. Cooling steam is supplied to one cavity for flow through apertures of the impingement plate to cool the nozzle wall. The side wall of the band and inturned flange define with the nozzle wall an undercut region. The inturned flange has a plurality of apertures for directing cooling steam to cool the side wall between adjacent nozzle segments.

    2. Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

      SciTech Connect (OSTI)

      Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

      2012-06-01

      We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. We found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several ?m were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.

    3. Base extrusion is found at helical junctions between right- and left-handed forms of DNA and RNA

      E-Print Network [OSTI]

      Kim, Doyoun

      Base extrusion is a major structural feature at the junction between B- and Z-DNA (the B–Z junction) where a base pair is broken, and the two bases are extruded from the double helix. Despite the demonstration of base ...

    4. Measurement of Component Cell Current-Voltage Characteristics in a Tandem-JunctionTwo-Terminal Solar Cell

      E-Print Network [OSTI]

      Deng, Xunming

      of multijunction solar cells. Keywords Measurement method, I-V characteristics, component cells, tandem junctionMeasurement of Component Cell Current-Voltage Characteristics in a Tandem- JunctionTwo-Terminal Solar Cell Chandan Das, Xianbi Xiang and Xunming Deng Department of Physics and Astronomy, University

    5. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

      SciTech Connect (OSTI)

      Yap, Yoke Khin

      2013-03-14

      Hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) are expected to have appealing new properties that are not available from pure BNNTs and CNTs. Theoretical studies indicate that BNNT/CNT junctions could be multifunctional and applicable as memory, spintronic, electronic, and photonics devices with tunable band structures. This will lead to energy and material efficient multifunctional devices that will be beneficial to the society. However, experimental realization of BNNT/CNT junctions was hindered by the absent of a common growth technique for BNNTs and CNTs. In fact, the synthesis of BNNTs was very challenging and may involve high temperatures (up to 3000 degree Celsius by laser ablation) and explosive chemicals. During the award period, we have successfully developed a simple chemical vapor deposition (CVD) technique to grow BNNTs at 1100-1200 degree Celsius without using dangerous chemicals. A series of common catalyst have then been identified for the synthesis of BNNTs and CNTs. Both of these breakthroughs have led to our preliminary success in growing two types of BNNT/CNT junctions and two additional new nanostructures: 1) branching BNNT/CNT junctions and 2) co-axial BNNT/CNT junctions, 3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNT/graphene junctions. We have started to understand their structural, compositional, and electronic properties. Latest results indicate that the branching BNNT/CNT junctions and QDs-BNNTs are functional as room-temperature tunneling devices. We have submitted the application of a renewal grant to continue the study of these new energy efficient materials. Finally, this project has also strengthened our collaborations with multiple Department of Energy�s Nanoscale Science Research Centers (NSRCs), including the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory, and the Center for Integrated Nanotechnologies (CINTs) at Sandia National Laboratories and Los Alamos National Laboratory. Results obtained during the current funding period have led to the publication of twelve peer reviewed articles, three review papers, two book and one encyclopedia chapters, and thirty eight conference/seminar presentation. One US provisional patent and one international patent have also been filed.

    6. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

      DOE Patents [OSTI]

      Wanlass, M.W.

      1994-12-27

      A single-junction solar cell is described having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of ''pinning'' the optimum band gap for a wide range of operating conditions at a value of 1.14[+-]0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap. 7 figures.

    7. Light-splitting photovoltaic system utilizing two dual-junction solar cells

      SciTech Connect (OSTI)

      Xiong, Kanglin; Yang, Hui; Lu, Shulong; Dong, Jianrong; Zhou, Taofei; Wang, Rongxin; Jiang, Desheng

      2010-12-15

      There are many difficulties limiting the further development of monolithic multi-junction solar cells, such as the growth of lattice-mismatched material and the current matching constraint. As an alternative approach, the light-splitting photovoltaic system is investigated intensively in different aspects, including the energy loss mechanism and the choice of energy bandgaps of solar cells. Based on the investigation, a two-dual junction system has been implemented employing lattice-matched GaInP/GaAs and InGaAsP/InGaAs cells grown epitaxially on GaAs and InP substrates, respectively. (author)

    8. Several small Josephson junctions in a resonant cavity: Deviation from the Dicke model W. A. Al-Saidi* and D. Stroud

      E-Print Network [OSTI]

      Stroud, David

      Several small Josephson junctions in a resonant cavity: Deviation from the Dicke model W. A. Al-Saidi

    9. Decoherence in Josephson Phase Qubits from Junction Resonators R.W. Simmonds, K. M. Lang, D. A. Hite, S. Nam, D. P. Pappas, and John M. Martinis*

      E-Print Network [OSTI]

      Martinis, John M.

      previously [4]. The circuit has been improved by placing the junction in a superconducting loop of inductance

    10. Hyaluronic Acid Gel Injection to Prevent Thermal Injury of Adjacent Gastrointestinal Tract during Percutaneous Liver Radiofrequency Ablation

      SciTech Connect (OSTI)

      Hasegawa, Takaaki, E-mail: hasegawat@clin.medic.mie-u.ac.jp; Takaki, Haruyuki; Miyagi, Hideki; Nakatsuka, Atsuhiro; Uraki, Junji; Yamanaka, Takashi; Fujimori, Masashi; Sakuma, Hajime; Yamakado, Koichiro [Mie University School of Medicine, Department of Radiology (Japan)

      2013-08-01

      This study evaluated the safety, feasibility, and clinical utility of hyaluronic acid gel injection to separate the gastrointestinal tract from the tumor during liver radiofrequency ablation (RFA). Eleven patients with liver tumors measuring 0.9-3.5 cm (mean {+-} standard deviation, 2.1 {+-} 0.8 cm) that were adjacent to the gastrointestinal tracts received RFA after the mixture of hyaluronic acid gel and contrast material (volume, 26.4 {+-} 14.5 mL; range, 10-60 mL) was injected between the tumor and the gastrointestinal tract under computed tomographic-fluoroscopic guidance. Each tumor was separated from the gastrointestinal tract by 1.0-1.5 cm (distance, 1.2 {+-} 0.2 cm) after injection of hyaluronic acid gel, and subsequent RFA was performed without any complications in all patients. Although tumor enhancement disappeared in all patients, local tumor progression was found in a patient (9.1 %, 1 of 11) during the follow-up of 5.5 {+-} 3.2 months (range, 0.4-9.9 months). In conclusion, hyaluronic acid gel injection is a safe and useful technique to avoid thermal injury of the adjacent gastrointestinal tract during liver RFA.

    11. Fire characterization and object thermal response for a large flat plate adjacent to a large JP-4 fuel fire

      SciTech Connect (OSTI)

      Gritzo, L.A.; Moya, J.L.; Murray, D.

      1997-01-01

      A series of three 18.9 m diameter JP-4 pool fire experiments with a large (2.1 m X 4.6 m), flat plate calorimeter adjacent to the fuel pool were recently performed. The objectives of these experiments were to: (1) gain a better understanding of fire phenomenology, (2) provide empirical input parameter estimates for simplified, deterministic Risk Assessment Compatible Fire Models (RACFMs), (3) assist in continuing fire field model code validation and development, and (4) enhance the data base of fire temperature and heat flux to object distributions. Due to different wind conditions during each experiment, data were obtained for conditions where the plate was not engulfed, fully-engulfed and partially engulfed by the continuous flame zone. Results include the heat flux distribution to the plate and flame thermocouple temperatures in the vicinity of the plate and at two cross sections within the lower region of the continuous flame zone. The results emphasize the importance of radiative coupling (i.e. the cooling of the flames by a thermally massive object) and convective coupling (including object-induced turbulence and object/wind/flame interactions) in determining the heat flux from a fire to an object. The formation of a secondary flame zone on an object adjacent to a fire via convective coupling (which increases the heat flux by a factor of two) is shown to be possible when the object is located within a distance equal to the object width from the fire.

    12. Rapid, Enhanced IV Characterization of Multi-Junction PV Devices under One Sun at NREL: Preprint

      SciTech Connect (OSTI)

      Moriarty, Tom; France, Ryan; Steiner, Myles

      2015-09-15

      Multi-junction technology is rapidly advancing, which puts increasing demands on IV characterization resources. We report on a tool and procedure for fast turn-around of IV data under the reference conditions, but also under controlled variations from the reference conditions. This enhanced data set can improve further iterations of device optimization.

    13. Fast Harmonic Balance of SIS Mixers with Multiple Junctions and Superconducting Circuits

      E-Print Network [OSTI]

      Ward, John

      Fast Harmonic Balance of SIS Mixers with Multiple Junctions and Superconducting Circuits Frank Rice-47, Pasadena, CA 91125, USA. Abstract We have extended the spectral domain harmonic balance method-Raphson technique to achieve rapid convergence, even when many harmonics are included in the analysis. Another im

    14. High quality YBa2Cu307 Josephson junctions made by direct electron beam writing

      E-Print Network [OSTI]

      Nadgorny, Boris

      High quality YBa2Cu307 Josephson junctions made by direct electron beam writing S. K. Tolpygo, S beam writing over YBa,C&O, thin-tilm microbridges, using scanning transmission electron microscope fabricated by the technologically attractive method of direct electron beam writing. The idea of using

    15. Quantum Monte Carlo study of a disordered 2D Josephson junction array

      E-Print Network [OSTI]

      Stroud, David

      Quantum Monte Carlo study of a disordered 2D Josephson junction array W.A. Al-Saidi *, D. Stroud not be established even * Corresponding author. E-mail addresses: al-saidi.1@osu.edu (W.A. Al-Saidi), stroud

    16. Temperature study of Zero Bias Features using self-assembling tunnel junctions 

      E-Print Network [OSTI]

      Savitski, Stephen Ronald

      2000-01-01

      Inelastic Tunneling Spectroscopy (IETS). In a SATJ, a barrier gas is deposited in situ between two metal wires that can be remotely manipulated by a magnetic field, to vary the junction conductance. The ZBF is studied for platinum/neon/platinum tunnel...

    17. Josephson instantons and Josephson monopoles in a non-Abelian Josephson junction

      E-Print Network [OSTI]

      Nitta, Muneto

      2015-01-01

      Non-Abelian Josephson junction is a junction of non-Abelian color superconductors sandwiching an insulator, or non-Abelian domain wall if flexible, whose low-energy dynamics is described by a $U(N)$ principal chiral model with the conventional pion mass. A non-Abelian Josephson vortex is a non-Abelian vortex (color magnetic flux tube) residing inside the junction, that is described as a non-Abelian sine-Gordon soliton. In this paper, we propose Josephson instantons and Josephson monopoles, that is, Yang-Mills instantons and monopoles inside a non-Abelian Josephson junction, respectively, and show that they are described as $SU(N)$ Skyrmions and $U(1)^{N-1}$ vortices in the $U(N)$ principal chiral model without and with a twisted mass term, respectively. Instantons with a twisted boundary condition are reduced (or T-dual) to monopoles, implying that ${\\mathbb C}P^{N-1}$ lumps are T-dual to ${\\mathbb C}P^{N-1}$ kinks inside a vortex. Here we find $SU(N)$ Skyrmions are T-dual to $U(1)^{N-1}$ vortices inside a wa...

    18. Sexual Dimorphism in Neuromuscular Junction Size on a Muscle Used in Courtship

      E-Print Network [OSTI]

      Wade, Juli

      Sexual Dimorphism in Neuromuscular Junction Size on a Muscle Used in Courtship by Green Anole that is sexually dimorphic. This courtship consists of the extension of a bright red throat fan (dewlap) associated season, the sexual dimorphisms were maintained, suggesting that these fea- tures do not change

    19. The importance of Fe surface states for spintronic devices based on magnetic tunnel junctions

      SciTech Connect (OSTI)

      Chantis, Athanasios N

      2008-01-01

      In this article we give a review of our recent theoretical studies of the influence of Fe(001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs(001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.

    20. On the transmission of binary bits in discrete Josephson-junction arrays

      E-Print Network [OSTI]

      J. E. Macías-Díaz; A. Puri

      2011-12-02

      In this work, we use supratransmission and infratransmission in the mathematical modeling of the propagation of digital signals in weakly damped, discrete Josephson-junction arrays, using energy-based detection criteria. Our results show an efficient and reliable transmission of binary information.

    1. Submicron YBa2Cu3Ox ramp Josephson junctions Philippe V. Komissinski,a)

      E-Print Network [OSTI]

      Högberg, Björn

      into the submicron range, similar moves are likely in superconductor electronics. Smaller Josephson junctions with a high density of the superconducting critical current Jc permit, for ex- ample, rapid single flux on high-temperature superconductors, namely YBa2Cu3Ox YBCO , satisfy these conditions having high Ic

    2. In situ Formation of Highly Conducting Covalent Au-C Contacts for Single-Molecule Junctions

      SciTech Connect (OSTI)

      Cheng, Z.L.; Hybertsen, M.; Skouta, R.; Vazquez, H.; Widawsky, J.R.; Schneebeli, S.; Chen, W.; Breslow, R.; Venkataraman, L.

      2011-06-01

      Charge transport across metal-molecule interfaces has an important role in organic electronics. Typically, chemical link groups such as thiols or amines are used to bind organic molecules to metal electrodes in single-molecule circuits, with these groups controlling both the physical structure and the electronic coupling at the interface. Direct metal-carbon coupling has been shown through C60, benzene and {pi}-stacked benzene but ideally the carbon backbone of the molecule should be covalently bonded to the electrode without intervening link groups. Here, we demonstrate a method to create junctions with such contacts. Trimethyl tin (SnMe{sub 3})-terminated polymethylene chains are used to form single-molecule junctions with a break-junction technique. Gold atoms at the electrode displace the SnMe{sub 3} linkers, leading to the formation of direct Au-C bonded single-molecule junctions with a conductance that is {approx}100 times larger than analogous alkanes with most other terminations. The conductance of these Au-C bonded alkanes decreases exponentially with molecular length, with a decay constant of 0.97 per methylene, consistent with a non-resonant transport mechanism. Control experiments and ab initio calculations show that high conductances are achieved because a covalent Au-C sigma ({sigma}) bond is formed. This offers a new method for making reproducible and highly conducting metal-organic contacts.

    3. 1364 Brief Communication Gap junction protein connexin-43 interacts directly with

      E-Print Network [OSTI]

      Mullen, Sean P.

      Increasing evidence indicates that gap-junctional Cx43 ismediate intercellular communication-terminal tail of connexin-43 (Cx43), the phorylate the Cx43 C-terminal tail (CT) via SH2 and SH3 domain in the regulation of Cx43 channel C-terminal residues of Cx43 interact with the second PDZ domain of the Zona

    4. Thermal conductance of the junction between single-walled carbon nanotubes

      E-Print Network [OSTI]

      McGaughey, Alan

      conductances of the carbon nanotube (CNT) junctions that would be found in a CNT aerogel are predicted using of carbon nanotubes (CNTs) (e.g., aligned films, mats, and aerogels) are candidates for use in electronic issue in all of these applications. Our focus here is related to single-walled CNT aerogels, which

    5. Tunneling characteristics in chemical vapor deposited graphene hexagonal boron nitride graphene junctions

      E-Print Network [OSTI]

      Feenstra, Randall

      1 Tunneling characteristics in chemical vapor deposited graphene ­ hexagonal boron nitride ­ graphene junctions T. Roy1 , L. Liu2 , S. de la Barrera,3 B. Chakrabarti1,4 , Z. R. Hesabi1 , C. A. Joiner1 Abstract: Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate

    6. Direct injection tunnel spectroscopy of a p-n junction Edward M. Likovich,1

      E-Print Network [OSTI]

      Russell, Kasey

      Direct injection tunnel spectroscopy of a p-n junction Edward M. Likovich,1 Kasey J. Russell,1,a barrier, the collector current of a direct- injection device could be larger than that of a metal-base device by roughly P PBC 1-PQM -1 400. Parasitic effects in the direct-injection device may slightly

    7. Hot electron effect in nanoscopically thin photovoltaic junctions K. Kempa,1,2,a

      E-Print Network [OSTI]

      Huang, Jianyu

      with photon energy. The key to observing this effect, one of several so-called third generation solarHot electron effect in nanoscopically thin photovoltaic junctions K. Kempa,1,2,a M. J. Naughton,1 efficiency photo- voltaics PVs . One of the seminal concepts proposed for next-generation solar cells

    8. Conductance states of molecular junctions for encoding binary information: a computational approach 

      E-Print Network [OSTI]

      Agapito, Luis Alberto

      2009-06-02

      -molecule-metal and metal-molecule-semiconductor junctions are considered. The molecule used is an olygo(phenylene ethynylene) composed of three benzene rings and a nitro group in the middle ring; this molecule is referred hereafter as the nitroOPE molecule. Gold, silicon...

    9. Nonequilibrium transport through quantum-wire junctions and boundary defects for free massless bosonic fields

      E-Print Network [OSTI]

      Krzysztof Gaw?dzki; Clément Tauber

      2015-01-29

      We consider a model of quantum-wire junctions where the latter are described by conformal-invariant boundary conditions of the simplest type in the multicomponent compactified massless scalar free field theory representing the bosonized Luttinger liquids in the bulk of wires. The boundary conditions result in the scattering of charges across the junction with nontrivial reflection and transmission amplitudes. The equilibrium state of such a system, corresponding to inverse temperature $\\beta$ and electric potential $V$, is explicitly constructed both for finite and for semi-infinite wires. In the latter case, a stationary nonequilibrium state describing the wires kept at different temperatures and potentials may be also constructed. The main result of the present paper is the calculation of the full counting statistics (FCS) of the charge and energy transfers through the junction in a nonequilibrium situation. Explicit expressions are worked out for the generating function of FCS and its large-deviations asymptotics. For the purely transmitting case they coincide with those obtained in the litterature, but numerous cases of junctions with transmission and reflection are also covered. The large deviations rate function of FCS for charge and energy transfers is shown to satisfy the fluctuation relations and the expressions for FCS obtained here are compared with the Levitov-Lesovic formulae.

    10. 22 Layer Chocolate Raspberry Cake

      E-Print Network [OSTI]

      Alpay, S. Pamir

      a la Mode $7 Fresh baked brownie served warm with fudge & whipped cream. *Gluten free available. Chocolate Nutella Torta $6 Delicious hazelnut cake layered with fudgy Nutella. *Gluten Free Cheesecake $5

    11. Geography 104 Boundary Layer Climates

      E-Print Network [OSTI]

      Geography 104 Boundary Layer Climates Assignment #5 Question 1: The Urban Heat Island The following briefly how the use of giant windmills or fans can be effective in preventing frost in an orchard. Refer

    12. Physical layer model design for wireless networks 

      E-Print Network [OSTI]

      Yu, Yi

      2009-06-02

      Wireless network analysis and simulations rely on accurate physical layer models. The increased interest in wireless network design and cross-layer design require an accurate and efficient physical layer model especially when a large number of nodes...

    13. Connecting Three Atomic Layers Puts Semiconducting Science on...

      Office of Science (SC) Website

      the linear junction region along the triangular interface produces enhanced light emission (red region). The Science A new semiconducting material that is only three atomic...

    14. Phreatic flow on sloping soil layers from a finite source: An analytical solution

      SciTech Connect (OSTI)

      Filley, T.H.

      1991-09-01

      Sloping clay layers beneath percolation ponds can cause infiltrating wastewater to pond and move in directions not predicted by vertical infiltration equations. This report presents a method for estimating the potential of wastewater from percolation sumps located over sloping clay layers to interact with nearby groundwater resources. The analytical solution developed is for steady-state conditions and includes a procedure to estimate the time needed to reach steady state. The fundamental assumption used in the mathematical development requires that elevation-head gradients be much larger than pressure-head gradients. A method for testing the validity of this assumption is also included. An example calculation was performed for percolation sumps on the Naval Petroleum Reserve No. 1 in Elk Hills, California. That analysis showed that, under the assumptions used, the sumps may have enabled oil field wastewater to reach groundwater resources within the adjacent San Joaquin Valley. 9 refs., 10 figs.

    15. Deep crustal sediment study: Widespread precambrian layered rocks (sedimentary ?) beneath the US midcontinent

      SciTech Connect (OSTI)

      Hauser, E.C. [Cornell Univ., Ithaca, NY (United States)

      1992-05-01

      A thick sequence of layered rocks occurs beneath the Phanerozoic platform strata which blanket the U.S. midcontinent. Observed on COCORP deep reflection data in southern Illinois and Indiana and in SW Oklahoma and adjacent Texas, this sequence is locally 1-3 times as thick as the overlying Paleozoic cover, but the origin of this sequence, its ultimate lateral extent, and resource potential are unknown. The objective of this project is to seek and reprocess seismic reflection data provided by industry from the U.S. midcontinent, and together with the COCORP deep reflection data and information from the scattered basement-penetrating drill holes, to begin to constrain the distribution, origin and evolution of this enigmatic layered sequence, particularly to evaluate if sedimentary material may be an important constituent (i.e., deep gas potential).

    16. Deep crustal sediment study: Widespread Precambrian layered rocks (Sedimentary ) beneath the US midcontinent

      SciTech Connect (OSTI)

      Hauser, E.C.

      1992-01-01

      A thick sequence of layered rocks occurs beneath the Phanerozoic platform strata which blanket the US midcontinent. Observed on COCORP deep reflection data in southern Illinois and Indiana and in SW Oklahoma and adjacent Texas, this sequence is locally 1--3 times as thick as the overlying Paleozoic cover, but the origin of this sequence, its ultimate lateral extent, and resource potential are unknown. The objective of this project is to seek and reprocess seismic reflection data provided by industry from the US midcontinent and together with the COCORP deep reflection data and information from the scattered basement-penetrating drill holes, to begin to constrain the distribution, origin and evolution of this enigmatic layered sequence, particularly to evaluate if sedimentary material may be an important constituent (i.e., deep gas potential).

    17. Deep crustal sediment study: Widespread Precambrian layered rocks (Sedimentary ?) beneath the US midcontinent

      SciTech Connect (OSTI)

      Hauser, E.C.

      1992-06-01

      A thick sequence of layered rocks occurs beneath the Phanerozoic platform strata which blanket the US midcontinent. Observed on COCORP deep reflection data in southern Illinois and Indiana and in SW Oklahoma and adjacent Texas, this sequence is locally 1--3 times as thick as the overlying Paleozoic cover, but the origin of this sequence, its ultimate lateral extent, and resource potential are unknown. The objective of this project is to seek and reprocess seismic reflection data provided by industry from the US midcontinent and together with the COCORP deep reflection data and information from the scattered basement-penetrating drill holes, to begin to constrain the distribution, origin and evolution of this enigmatic layered sequence, particularly to evaluate if sedimentary material may be an important constituent (i.e., deep gas potential).

    18. Amorphous silicon passivated contacts for diffused junction silicon solar cells

      SciTech Connect (OSTI)

      Bullock, J. Yan, D.; Wan, Y.; Cuevas, A.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

      2014-04-28

      Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

    19. High Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology, Final Technical Report, 6 March 1998 - 15 October 2001

      SciTech Connect (OSTI)

      Guha, S.

      2001-11-08

      This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and high reliability. United Solar uses a spectrum-splitting, triple-junction cell structure. The top cell uses an amorphous silicon alloy of {approx}1.8-eV bandgap to absorb blue photons. The middle cell uses an amorphous silicon germanium alloy ({approx}20% germanium) of {approx}1.6-eV bandgap to capture green photons. The bottom cell has {approx}40% germanium to reduce the bandgap to {approx}1.4-eV to capture red photons. The cells are deposited on a stainless-steel substrate with a predeposited silver/zinc oxide back reflector to facilitate light-trapping. A thin layer of antireflection coating is applied to the top of the cell to reduce reflection loss. The major research activities conducted under this program were: (1) Fundamental studies to improve our understanding of materials and devices; the work included developing and analyzing a-Si alloy and a-SiGe alloy materials prepared near the threshold of amorphous-to-microcrystalline transition and studying solar cells fabricated using these materials. (2) Deposition of small-area cells using a radio-frequency technique to obtain higher deposition rates. (3) Deposition of small-area cells using a modified very high frequency technique to obtain higher deposition rates. (4) Large-area cell research to obtain the highest module efficiency. (5) Optimization of solar cells and modules fabricated using production parameters in a large-area reactor.

    20. Modeling of capacitance transients of thin-film solar cells: A valuable tool to gain information on perturbing layers or interfaces

      SciTech Connect (OSTI)

      Lauwaert, Johan Van Puyvelde, Lisanne; Vrielinck, Henk; Lauwaert, Jeroen; Thybaut, Joris W.

      2014-02-03

      Thin-film electronic and photovoltaic devices often comprise, in addition to the anticipated p-n junctions, additional non-ideal ohmic contacts between layers. This may give rise to additional signals in capacitance spectroscopy techniques that are not directly related to defects in the structure. In this paper, we present a fitting algorithm for transient signals arising from such an additional junction. The fitting results are in excellent agreement with the diode characteristics extracted from static measurements on individual components. Finally, the algorithm is applied for determining the barriers associated with anomalous signals reported for selected CuIn{sub 1–x}Ga{sub x}Se{sub 2} and CdTe solar cells.

    1. Superconducting electromechanical rotating device having a liquid-cooled, potted, one layer stator winding

      DOE Patents [OSTI]

      Dombrovski, Viatcheslav V. (Willoughby Hills, OH); Driscoll, David I. (South Euclid, OH); Shovkhet, Boris A. (Beachwood, OH)

      2001-01-01

      A superconducting electromechanical rotating (SER) device, such as a synchronous AC motor, includes a superconducting field winding and a one-layer stator winding that may be water-cooled. The stator winding is potted to a support such as the inner radial surface of a support structure and, accordingly, lacks hangers or other mechanical fasteners that otherwise would complicate stator assembly and require the provision of an unnecessarily large gap between adjacent stator coil sections. The one-layer winding topology, resulting in the number of coils being equal to half the number of slots or other mounting locations on the support structure, allows one to minimize or eliminate the gap between the inner radial ends of adjacent straight sections of the stator coilswhile maintaining the gap between the coil knuckles equal to at least the coil width, providing sufficient room for electrical and cooling element configurations and connections. The stator winding may be potted to the support structure or other support, for example, by a one-step VPI process relying on saturation of an absorbent material to fill large gaps in the stator winding or by a two-step process in which small gaps are first filled via a VPI or similar operation and larger gaps are then filled via an operation that utilizes the stator as a portion of an on-site mold.

    2. Layered architecture for quantum computing

      E-Print Network [OSTI]

      N. Cody Jones; Rodney Van Meter; Austin G. Fowler; Peter L. McMahon; Jungsang Kim; Thaddeus D. Ladd; Yoshihisa Yamamoto

      2012-09-27

      We develop a layered quantum computer architecture, which is a systematic framework for tackling the individual challenges of developing a quantum computer while constructing a cohesive device design. We discuss many of the prominent techniques for implementing circuit-model quantum computing and introduce several new methods, with an emphasis on employing surface code quantum error correction. In doing so, we propose a new quantum computer architecture based on optical control of quantum dots. The timescales of physical hardware operations and logical, error-corrected quantum gates differ by several orders of magnitude. By dividing functionality into layers, we can design and analyze subsystems independently, demonstrating the value of our layered architectural approach. Using this concrete hardware platform, we provide resource analysis for executing fault-tolerant quantum algorithms for integer factoring and quantum simulation, finding that the quantum dot architecture we study could solve such problems on the timescale of days.

    3. Growth optimization and structural analysis for ferromagnetic Mn-doped ZnO layers deposited by radio frequency magnetron sputtering

      SciTech Connect (OSTI)

      Abouzaid, M.; Ruterana, P.; Liu, C.; Morkoc, H. [SIFCOM UMR 6176 CNRS-ENSICAEN, 6 Boulevard du Marechal Juin, 14050 Caen Cedex (France); Department of Electrical Engineering, Virginia Commonwealth University, Richmond Virginia 23284 (United States)

      2006-06-01

      The effect of the deposition temperature on the crystalline quality of (Zn,Mn)O is investigated in thin films prepared by radio frequency magnetron sputtering on c-plane sapphire and GaN substrates. The layers are made of a 0.5 {mu}m Mn-doped layer towards the surface on top of a 150 nm pure ZnO buffer. Depending on the deposition temperature, the layers can exhibit a columnar structure; the adjacent domains are rotated from one another by 90 deg. , putting [1010] and [1120] directions face to face. At high Mn concentration the columnar structure is blurred by the formation of Mn rich precipitates. Only one variety of domains is observed at an optimal deposition temperature of 500 deg. C: they are slightly rotated around the [0001] axis (mosaic growth) and bounded by threading dislocations.

    4. Network Layer Routing -I Yatindra Nath Singh

      E-Print Network [OSTI]

      Singh Yatindra Nath

      are connected by point-to-point links. Fig.1 Network is build using layered architectures Each layer uses Another abstraction layer over Physical layer Provides reliable transport of information over point-to-point the packet forwarding, each node has a forwarding table. Each forwarding table entry has Destination address

    5. Electronic transport in biphenyl single-molecule junctions with carbon nanotubes electrodes: The role of molecular conformation and chirality

      SciTech Connect (OSTI)

      Brito Silva, C. A. Jr.; Granhen, E. R. [Pos-Graduacao em Engenharia Eletrica, Universidade Federal do Para, 66075-900 Belem, PA (Brazil); Silva, S. J. S. da; Leal, J. F. P. [Pos-Graduacao em Fisica, Universidade Federal do Para, 66075-110 Belem, PA (Brazil); Del Nero, J. [Departamento de Fisica, Universidade Federal do Para, 66075-110 Belem, PA (Brazil); Divisao de Metrologia de Materiais, Instituto Nacional de Metrologia, Normalizacao e Qualidade Industrial, 25250-020 Duque de Caxias, RJ (Brazil); Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ (Brazil); Pinheiro, F. A. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ (Brazil)

      2010-08-15

      We investigate, by means of ab initio calculations, electronic transport in molecular junctions composed of a biphenyl molecule attached to metallic carbon nanotubes. We find that the conductance is proportional to cos{sup 2} {theta}, with {theta} the angle between phenyl rings, when the Fermi level of the contacts lies within the frontier molecular orbitals energy gap. This result, which agrees with experiments in biphenyl junctions with nonorganic contacts, suggests that the cos{sup 2} {theta} law has a more general applicability, irrespective of the nature of the electrodes. We calculate the geometrical degree of chirality of the junction, which only depends on the atomic positions, and demonstrate that it is not only proportional to cos{sup 2} {theta} but also is strongly correlated with the current through the system. These results indicate that molecular conformation plays the preponderant role in determining transport properties of biphenyl-carbon nanotubes molecular junctions.

    6. 794 IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, VOL. 13, NO. 2, JUNE 2003 Novel In-Situ Fabricated Josephson Junctions

      E-Print Network [OSTI]

      Högberg, Björn

      794 IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, VOL. 13, NO. 2, JUNE 2003 Novel In--We demonstrate a high-temperature superconductor (HTS) Josephson junction geometry using only in situ interfaces

    7. EIS-0126: Remedial Actions at the Former Climax Uranium Company Uranium Mill Site, Grand Junction, Mesa County, Colorado

      Broader source: Energy.gov [DOE]

      The U.S. Department of Energy developed this EIS to assess the environmental impacts of remediating the residual radioactive materials left from the inactive uranium processing site and associated properties located in Grand Junction, Colorado.

    8. Determining resistivity of a formation adjacent to a borehole having casing using multiple electrodes and with resistances being defined between the electrodes

      DOE Patents [OSTI]

      Vail, III, William B. (Bothell, WA)

      1996-01-01

      Methods of operation of different types of multiple electrode apparatus vertically disposed in a cased well to measure information related to the resistivity of adjacent geological formations from inside the cased well. The multiple electrode apparatus have a minimum of three spaced apart voltage measurement electrodes that electrically engage the interior of the cased well. Measurement information is obtained related to current which is caused to flow from the cased well into the adjacent geological formation. First compensation information is obtained related to a first casing resistance between a first pair of the spaced apart voltage measurement electrodes. Second compensation information is obtained related to a second casing resistance between a second pair of the spaced apart voltage measurement electrodes. The measurement information, and first and second compensation information are used to determine a magnitude related to the adjacent formation resistivity.

    9. Organic photovoltaic cells utilizing ultrathin sensitizing layer

      DOE Patents [OSTI]

      Rand, Barry P. (Princeton, NJ); Forrest, Stephen R. (Princeton, NJ)

      2011-05-24

      A photosensitive device includes a series of organic photoactive layers disposed between two electrodes. Each layer in the series is in direct contact with a next layer in the series. The series is arranged to form at least one donor-acceptor heterojunction, and includes a first organic photoactive layer comprising a first host material serving as a donor, a thin second organic photoactive layer comprising a second host material disposed between the first and a third organic photoactive layer, and the third organic photoactive layer comprising a third host material serving as an acceptor. The first, second, and third host materials are different. The thin second layer serves as an acceptor relative to the first layer or as a donor relative to the third layer.

    10. Silver Lake Adjacent

      E-Print Network [OSTI]

      Doss, Yvette Crystal

      2012-01-01

      Back in her kitchen over green tea, she told him she wasbare. “Come have a cup of green tea,” she said, pulling him

    11. Silver Lake Adjacent

      E-Print Network [OSTI]

      Doss, Yvette Crystal

      2012-01-01

      living, just barely. With my gigs and Mari’s job, we did allDanny calls to say we have a gig booked at the Spitfire.with getting you booked on gigs for the tour. You can’t bow

    12. Comparison of graded and abrupt junction In,,,Ga,,,As heterojunction Much progress has been made fabricating high speed

      E-Print Network [OSTI]

      Levi, Anthony F. J.

      results of numerically simulating charge transport in graded and abrupt junction n-p-n HBTs lattice diagram of an abrupt junction n-p-n Alo,4sIn,,2As/Ino,s3Ga".~~~ HBT un- der forward bias. (b) Results fabricating high speed n-p-n heterojunction bipolar transistors (HBTs) lattice matched to InP. Very high speed

    13. Quantifying the relative molecular orbital alignment for molecular junctions with similar chemical linkage to electrodes

      E-Print Network [OSTI]

      Baldea, Ioan

      2015-01-01

      Estimating the relative alignment between the frontier molecular orbitals that dominates the charge transport through single-molecule junctions represents a challenge for theory. This requires approaches beyond the widely employed framework provided by the density functional theory, wherein the Kohn-Sham "orbitals" are treated as if they were real molecular orbitals, which is not the case. In this paper, we report results obtained by means of quantum chemical calculations, including the EOM-CCSD (equation-of-motion coupled-cluster singles and doubles), which is the state-of-the-art of quantum chemistry for medium-size molecules like those considered here. These theoretical results are validated against data on the molecular orbital energy offset relative to the electrodes' Fermi energy extracted from experiments for junctions based on 4,4'-bipyridine and 1,4-dicyanobenzene.

    14. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

      SciTech Connect (OSTI)

      Dhungana, Kamal B.; Pati, Ranjit, E-mail: patir@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States)

      2014-04-21

      Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy.

    15. Multiple junction cell characterization using the LBIC method : early results, issues, and pathways to improvement.

      SciTech Connect (OSTI)

      Finn, Jason R.; Granata, Jennifer E.; Hansen, Barry R.

      2010-03-01

      A light beam induced current (LBIC) measurement is a non-destructive technique that produces a spatial graphical representation of current response in photovoltaic cells with respect to position when stimulated by a light beam. Generally, a laser beam is used for these measurements because the spot size can be made very small, on the order of microns, and very precise measurements can be made. Sandia National Laboratories Photovoltaic System Evaluation Laboratory (PSEL) uses its LBIC measurement technique to characterize single junction mono-crystalline and multi-crystalline solar cells ranging from miniature to conventional sizes. Sandia has modified the already valuable LBIC technique to enable multi-junction PV cells to be characterized.

    16. Chemical solution seed layer for rabits tapes

      SciTech Connect (OSTI)

      Goyal, Amit; Paranthaman, Mariappan; Wee, Sung-Hun

      2014-06-10

      A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.

    17. Buffer layer for thin film structures

      DOE Patents [OSTI]

      Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

      2010-06-15

      A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

    18. Buffer layer for thin film structures

      DOE Patents [OSTI]

      Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

      2006-10-31

      A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

    19. Action Required An extra layer

      E-Print Network [OSTI]

      Fernandez, Eduardo

      Action Required An extra layer of protection m A Securian Company State of Florida Group Term Life by Minnesota Life Insurance Company, at rates negotiated exclusively for employees of the State of Florida's right for you and your family, it's important to think about the amount of money your family would need

    20. Josephson instantons and Josephson monopoles in a non-Abelian Josephson junction

      E-Print Network [OSTI]

      Muneto Nitta

      2015-08-11

      Non-Abelian Josephson junction is a junction of non-Abelian color superconductors sandwiching an insulator, or non-Abelian domain wall if flexible, whose low-energy dynamics is described by a $U(N)$ principal chiral model with the conventional pion mass. A non-Abelian Josephson vortex is a non-Abelian vortex (color magnetic flux tube) residing inside the junction, that is described as a non-Abelian sine-Gordon soliton. In this paper, we propose Josephson instantons and Josephson monopoles, that is, Yang-Mills instantons and monopoles inside a non-Abelian Josephson junction, respectively, and show that they are described as $SU(N)$ Skyrmions and $U(1)^{N-1}$ vortices in the $U(N)$ principal chiral model without and with a twisted mass term, respectively. Instantons with a twisted boundary condition are reduced (or T-dual) to monopoles, implying that ${\\mathbb C}P^{N-1}$ lumps are T-dual to ${\\mathbb C}P^{N-1}$ kinks inside a vortex. Here we find $SU(N)$ Skyrmions are T-dual to $U(1)^{N-1}$ vortices inside a wall. Our configurations suggest a yet another duality between ${\\mathbb C}P^{N-1}$ lumps and $SU(N)$ Skyrmions as well as that between ${\\mathbb C}P^{N-1}$ kinks and $U(1)^{N-1}$ vortices, viewed from different host solitons. They also suggest a duality between fractional instantons and bions in the ${\\mathbb C}P^{N-1}$ model and those in the $SU(N)$ principal chiral model.

    1. Mathematical Contributions to the Dynamics of the Josephson Junctions: State of the Art and Open Problems

      E-Print Network [OSTI]

      Monica De Angelis

      2015-09-10

      Mathematical models related to some Josephson junctions are pointed out and attention is drawn to the solutions of certain initial boundary problems and to some of their estimates. In addition, results of rigorous analysis of the behaviour of these solutions when the time tends to infinity and when the small parameter tends to zero are cited. These analyses lead us to mention some of the open problems.

    2. Scalable Parallel Implementation of Bayesian Network to Junction Tree Conversion for Exact Inference1

      E-Print Network [OSTI]

      Hwang, Kai

      -case running time is shown to be O(n2 w/p+wrw n/p+n log p), where w is the clique width and r is the number stages. The combined time complexity of our parallel approach is O(n2 w/p + wrw n/p + n log pScalable Parallel Implementation of Bayesian Network to Junction Tree Conversion for Exact

    3. Voltage-controlled switching and thermal effects in VO{sub 2} nano-gap junctions

      SciTech Connect (OSTI)

      Joushaghani, Arash; Jeong, Junho; Stewart Aitchison, J.; Poon, Joyce K. S. [Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada); Paradis, Suzanne; Alain, David [Defence Research and Development Canada - Valcartier, 2459 Pie-XI Blvd. North, Quebec, Quebec G3J 1X5 (Canada)

      2014-06-02

      Voltage-controlled switching in lateral VO{sub 2} nano-gap junctions with different gap lengths and thermal properties was investigated. The effect of Joule heating on the phase transition was found to be strongly influenced by the device geometry, the contact material, and the current. Our results indicate that the VO{sub 2} phase transition was likely initiated electronically, which was sometimes followed by a secondary thermally induced transition.

    4. Physical model of the contact resistivity of metal-graphene junctions

      SciTech Connect (OSTI)

      Chaves, Ferney A., E-mail: ferneyalveiro.chaves@uab.cat; Jiménez, David [Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Cummings, Aron W. [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Roche, Stephan [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona (Spain)

      2014-04-28

      While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

    5. Terahertz time domain interferometry of a SIS tunnel junction and a quantum point contact

      SciTech Connect (OSTI)

      Karadi, C [Univ. of California, Berkeley, CA (United States). Dept. of Physics

      1995-09-01

      The author has applied the Terahertz Time Domain Interferometric (THz-TDI) technique to probe the ultrafast dynamic response of a Superconducting-Insulating-Superconducting (SIS) tunnel junction and a Quantum Point Contact (QPC). The THz-TDI technique involves monitoring changes in the dc current induced by interfering two picosecond electrical pulses on the junction as a function of time delay between them. Measurements of the response of the Nb/AlO{sub x}/Nb SIS tunnel junction from 75--200 GHz are in full agreement with the linear theory for photon-assisted tunneling. Likewise, measurements of the induced current in a QPC as a function of source-drain voltage, gate voltage, frequency, and magnetic field also show strong evidence for photon-assisted transport. These experiments together demonstrate the general applicability of the THz-TDI technique to the characterization of the dynamic response of any micron or nanometer scale device that exhibits a non-linear I-V characteristic. 133 refs., 49 figs.

    6. Reduction of COD in leachate from a hazardous waste landfill adjacent to a coke-making facility

      SciTech Connect (OSTI)

      Banerjee, K.; O`Toole, T.J. [Chester Environmental, Moon Township, PA (United States)

      1995-12-01

      A hazardous waste landfill adjacent to a coke manufacturing facility was in operation between July 1990 and December 1991. A system was constructed to collect and treat the leachate from the landfill prior to discharge to the river. Occasionally, the discharge from the treatment facility exceeded the permit limitations for Chemical Oxygen Demand (COD), Biochemical Oxygen Demand (BOD), and Total Organic Carbon (TOC). The objectives of this study were to determine treatment methods which would enable compliance with the applicable discharge limits; to establish the desired operating conditions of the process; and to investigate the effect of various parameters such as pH, catalyst dosage, and reaction time on the COD destruction efficiency. The characteristics of the landfill leachate in question were significantly variable in terms of chemical composition. A review of the influent quality data suggests that the COD concentration ranges between 80 and 390 mg/l. The oxidation processes using Fenton`s reagent or a combination of UV/hydrogen peroxide/catalyst are capable of reducing the COD concentration of the leachate below the discharge limitation of 35 mg/l. The estimated capital cost associated with the Fenton`s reagent process is approximately $525,000, and the annual operating and maintenance cost is $560,000. The estimated capital cost for the UV/hydrogen peroxide/catalyst treatment system is $565,000. The annual operating and maintenance cost of this process would be approximately $430,000.

    7. Vehicle cabin cooling system for capturing and exhausting heated boundary layer air from inner surfaces of solar heated windows

      DOE Patents [OSTI]

      Farrington, Robert B. (Golden, CO); Anderson, Ren (Broomfield, CO)

      2001-01-01

      The cabin cooling system includes a cooling duct positioned proximate and above upper edges of one or more windows of a vehicle to exhaust hot air as the air is heated by inner surfaces of the windows and forms thin boundary layers of heated air adjacent the heated windows. The cabin cooling system includes at least one fan to draw the hot air into the cooling duct at a flow rate that captures the hot air in the boundary layer without capturing a significant portion of the cooler cabin interior air and to discharge the hot air at a point outside the vehicle cabin, such as the vehicle trunk. In a preferred embodiment, the cooling duct has a cross-sectional area that gradually increases from a distal point to a proximal point to the fan inlet to develop a substantially uniform pressure drop along the length of the cooling duct. Correspondingly, this cross-sectional configuration develops a uniform suction pressure and uniform flow rate at the upper edge of the window to capture the hot air in the boundary layer adjacent each window.

    8. Optimized capping layers for EUV multilayers

      DOE Patents [OSTI]

      Bajt, Sasa (Livermore, CA); Folta, James A. (Livermore, CA); Spiller, Eberhard A. (Livermore, CA)

      2004-08-24

      A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B.sub.4 C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B.sub.4 C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.

    9. Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing

      SciTech Connect (OSTI)

      Sato, Soshi Honjo, Hiroaki; Niwa, Masaaki; Ikeda, Shoji; Ohno, Hideo; Endoh, Tetsuo

      2015-04-06

      We have investigated the redox reaction on the surface of Ta/CoFeB/MgO/CoFeB magnetic tunnel junction stack samples after annealing at 300, 350, and 400?°C for 1?h using angle-resolved X-ray photoelectron spectroscopy for precise analysis of the chemical bonding states. At a capping tantalum layer thickness of 1?nm, both the capping tantalum layer and the surface of the underneath CoFeB layer in the as-deposited stack sample were naturally oxidized. By comparison of the Co 2p and Fe 2p spectra among the as-deposited and annealed samples, reduction of the naturally oxidized cobalt and iron atoms occurred on the surface of the CoFeB layer. The reduction reaction was more significant at higher annealing temperature. Oxidized cobalt and iron were reduced by boron atoms that diffused toward the surface of the top CoFeB layer. A single CoFeB layer was prepared on SiO{sub 2}, and a confirmatory evidence of the redox reaction with boron diffusion was obtained by angle-resolved X-ray photoelectron spectroscopy analysis of the naturally oxidized surface of the CoFeB single layer after annealing. The redox reaction is theoretically reasonable based on the Ellingham diagram.

    10. JOURNAL OF GEOPHYSICAL RESEARCH: SOLID EARTH, VOL. 118, 120, doi:10.1002/jgrb.50258, 2013 Lithospheric structure of an Archean craton and adjacent mobile belt

      E-Print Network [OSTI]

      Jones, Alan G.

      Lithospheric structure of an Archean craton and adjacent mobile belt revealed from 2-D and 3-D inversion; accepted 20 June 2013. [1] Archean cratons, and the stitching Proterozoic orogenic belts on their flanks-African orogenic belt due to thick sedimentary cover. We present the first lithospheric-scale geophysical study

    11. Quantum Hall Effect in n-p-n and n-2D Topological Insulator-n Junctions G. M. Gusev,1

      E-Print Network [OSTI]

      Gusev, Guennady

      Quantum Hall Effect in n-p-n and n-2D Topological Insulator-n Junctions G. M. Gusev,1 A. D. Levin,1 TI) with locally controlled density allowing n-p-n and n-2D TI-n junctions. The resistance reveals quantization in the graphene p-n [1] or n-p-n [2,3] junctions, which has been attributed to chiral edge states

    12. Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate

      E-Print Network [OSTI]

      Psaltis, Demetri

      Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light://jap.aip.org/about/rights_and_permissions #12;Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light developed substrate that decouples the growth and scattering interfaces are investigated in n-i-p triple-junction

    13. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

      E-Print Network [OSTI]

      Atwater, Harry

      GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

    14. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

      E-Print Network [OSTI]

      Atwater, Harry

      FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS RobynAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising

    15. Magnetism reflectometer study shows LiF layers improve efficiency in spin valve devices

      SciTech Connect (OSTI)

      Bardoel, Agatha A [ORNL; Lauter, Valeria [ORNL; Szulczewski, Greg J [ORNL

      2012-01-01

      New, more efficient materials for spin valves - a device used in magnetic sensors, random access memories, and hard disk drives - may be on the way based on research using the magnetism reflectometer at Oak Ridge National Laboratory (ORNL). Spin valve devices work by means of two or more conducting magnetic material layers that alternate their electrical resistance depending on the layers alignment. Giant magnetoresistance is a quantum mechanical effect first observed in thin film structures about 20 years ago. The effect is observed as a significant change in electrical resistance, depending on whether the magnetization of adjacent ferromagnetic layers is in a parallel or an antiparallel magnetic alignment. 'What we are doing here is developing new materials. The search for new materials suitable for injecting and transferring carriers with a preferential spin orientation is most important for the development of spintronics,' said Valeria Lauter, lead instrument scientist on the magnetism reflectometer at the Spallation Neutron Source (SNS), who collaborated on the experiment. The researchers discovered that the conductivity of such materials is improved when an organic polymer semiconductor layer is placed between the magnetic materials. Organic semiconductors are now the material of choice for future spin valve devices because they preserve spin coherence over longer times and distances than conventional semiconductors. While research into spin valves has been ongoing, research into organic semiconductors is recent. Previous research has shown that a 'conductivity mismatch' exists in spin valve systems in which ferromagnetic metal electrodes interface with such organic semiconductors as Alq3 ({pi}-conjugated molecule tris(8-hydroxy-quinoline) aluminium). This mismatch limits the efficient injection of the electrons from the electrodes at the interface with the semiconductor material. However, lithium fluoride (LiF), commonly used in light-emitting diodes, has been found to enhance the injection of electrons through the semiconductor. Researchers from the University of Alabama and ORNL used polarized neutrons at the magnetism reflectometer at SNS to investigate the electronic, magnetic, and structural properties of the electrodes in a novel system. In this system, the magnetic layers cobalt and Ni{sub 80}Fe{sub 20} are interfaced with spacer layers composed of the organic semiconductor Alq3. A coupling layer of LiF is inserted to separate the magnetized layers from the semiconductor. 'ALQ3 is an organic semiconductor material,' said Lauter. 'Normally in these systems a first magnetic layer is grown on a hard substrate so that one can get the controlled magnetic parameters. Then you grow the organic semiconductor layer, followed by another magnetic material layer, such as cobalt.' In addition to determining the effect of the LiF layers on the efficiency of the electron injection, the researchers wanted to determine the magnetic properties of the cobalt and Ni{sub 80}Fe{sub 20} as well as the interfacial properties: whether there is interdiffusion of cobalt through the LiF layer to the semiconductor, for example. The researchers used polarized neutrons at beam line 4A to probe the entire, layer-by-layer assembly of the system. 'Reflectometry with polarized neutrons is a perfect method to study thin magnetic films,' Lauter said. 'These thin films - if you put one on a substrate, you see it just like a mirror. However, this mirror has a very complicated internal multilayer structure. The neutrons look inside this complicated structure and characterize each and every interface. Due to the depth sensitivity of the method, we measure the structural and magnetic properties of each layer with the resolution of 0.5 nm. The neutron scattering results found that inserting LiF as a barrier significantly improves the quality of the interface, increasing the injection of electrons from the magnetic layer through the organic semiconductor in the spin valve and enhancing the overall properties of the system. In related work the magneti

    16. Conformational instability of the MARK3 UBA domain compromises ubiquitin recognition and promotes interaction with the adjacent kinase domain

      SciTech Connect (OSTI)

      Murphy, James M.; Korzhnev, Dmitry M.; Ceccarelli, Derek F.; Briant, Douglas J.; Zarrine-Afsar, Arash; Sicheri, Frank; Kay, Lewis E.; Pawson, Tony (Mount Sinai Hospital); (Toronto)

      2012-10-23

      The Par-1/MARK protein kinases play a pivotal role in establishing cellular polarity. This family of kinases contains a unique domain architecture, in which a ubiquitin-associated (UBA) domain is located C-terminal to the kinase domain. We have used a combination of x-ray crystallography and NMR dynamics experiments to understand the interaction of the human (h) MARK3 UBA domain with the adjacent kinase domain as compared with ubiquitin. The x-ray crystal structure of the linked hMARK3 kinase and UBA domains establishes that the UBA domain forms a stable intramolecular interaction with the N-terminal lobe of the kinase domain. However, solution-state NMR studies of the isolated UBA domain indicate that it is highly dynamic, undergoing conformational transitions that can be explained by a folding-unfolding equilibrium. NMR titration experiments indicated that the hMARK3 UBA domain has a detectable but extremely weak affinity for mono ubiquitin, which suggests that conformational instability of the isolated hMARK3 UBA domain attenuates binding to ubiquitin despite the presence of residues typically involved in ubiquitin recognition. Our data identify a molecular mechanism through which the hMARK3 UBA domain has evolved to bind the kinase domain, in a fashion that stabilizes an open conformation of the N- and C-terminal lobes, at the expense of its capacity to engage ubiquitin. These results may be relevant more generally to the 30% of UBA domains that lack significant ubiquitin-binding activity, and they suggest a unique mechanism by which interaction domains may evolve new binding properties.

    17. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells using AFM-Based Electrical Techniques with Nanometer Resolution

      SciTech Connect (OSTI)

      Jiang, C. S.; Heath, J. T.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.

      2011-01-01

      Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

    18. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells Using AFM-Based Electrical Techniques with Nanometer Resolution: Preprint

      SciTech Connect (OSTI)

      Jiang, C. S.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.; Heath, J. T.

      2011-07-01

      Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

    19. Electronic transport in atomically thin layered materials

      E-Print Network [OSTI]

      Baugher, Britton William Herbert

      2014-01-01

      Electronic transport in atomically thin layered materials has been a burgeoning field of study since the discovery of isolated single layer graphene in 2004. Graphene, a semi-metal, has a unique gapless Dirac-like band ...

    20. Water Uptake in PEMFC Catalyst Layers

      E-Print Network [OSTI]

      Gunterman, Haluna P.

      2013-01-01

      of California. Water Uptake in PEMFC Catalyst Layers H. P.membrane fuel cells (PEMFC) is rife with challenges.

    1. Progress on First-Principles Calculations and Experimental Results of Single-crystalline Magnetic Tunnel Junctions with MgO barriers

      SciTech Connect (OSTI)

      Wang, Y.; Zhang, J.; Zhang, Xiaoguang; Wang, Shouguo; Han, Xiufeng

      2009-01-01

      Since the theoretical prediction and experimental observation of giant tunneling magnetoresistance (TMR) effect at room temperature in magnetic tunnel junctions (MTJs) with single-crystalline MgO(001) barrier, MgO-based MTJs have been extensively studied due to their broad potential applications in spintronic devices. In this paper, progress on theoretical calculations and experimental results in MgO-based MTJs is reported. Spin-dependent electronic structure and transport properties of MgO-based MTJs, including structures of Fe(001)/MgO/Fe, Fe(001)/FeO/MgO/Fe, Fe(001)/Mg/MgO/Fe, Fe(001)/Co/MgO/Co/Fe, and Fe(001)/MgO/Fe/MgO/Fe, have been studied using the Layer-KKR first-principles method. The quantitative result not only provide a better way to understand the electronic structures and spin-dependent transport properties of MgO-based MTJs, but also shows a direction to exploit new kinds of spintronic materials with high room-temperature TMR ratio.

    2. Biaxially textured metal substrate with palladium layer

      DOE Patents [OSTI]

      Robbins, William B. (Maplewood, MN)

      2002-12-31

      Described is an article comprising a biaxially textured metal substrate and a layer of palladium deposited on at least one major surface of the metal substrate; wherein the palladium layer has desired in-plane and out-of-plane crystallographic orientations, which allow subsequent layers that are applied on the article to also have the desired orientations.

    3. Inkjet Deposition of Layer-by-Layer Assembled Films

      SciTech Connect (OSTI)

      Andres, C. M.; Kotov, Nicholas A.

      2010-09-23

      Layer-by-layer assembly (LBL) can create advanced composites with exceptional properties unavailable by other means, but the laborious deposition process and multiple dipping cycles hamper their utilization in microtechnologies and electronics. Multiple rinse steps provide both structural control and thermodynamic stability to LBL multilayers, but they significantly limit their practical applications and contribute significantly to the processing time and waste. Here we demonstrate that by employing inkjet technology one can deliver the necessary quantities of LBL components required for film buildup without excess, eliminating the need for repetitive rinsing steps. This feature differentiates this approach from all other recognized LBL modalities. Using a model system of negatively charged gold nanoparticles and positively charged poly(diallyldimethylammonium) chloride, the material stability, nanoscale control over thickness, and particle coverage offered by the inkjet LBL technique are shown to be equal or better than the case of multilayers made with traditional dipping cycles. The opportunity for fast deposition of complex metallic patterns using a simple inkjet printer is also shown. The additive nature of LBL deposition based on the formation of insoluble nanoparticle-polyelectrolyte complexes of various compositions provides an excellent opportunity for versatile, multicomponent, and noncontact patterning for the simple production of stratified patterns that are much needed in advanced devices.

    4. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

      SciTech Connect (OSTI)

      Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

      2014-10-06

      InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

    5. Electron microscopic single particle analysis of a tetrameric RuvA/RuvB/Holliday junction DNA complex

      SciTech Connect (OSTI)

      Mayanagi, Kouta [Nagahama Institute of Bio-Science and Technology, 1266 Tamura-cho, Nagahama, Shiga 526-0829 (Japan); Takara-Bio Endowed Division, Institute for Protein Research, Osaka University, 6-2-3 Furuedai, Suita, Osaka 565-0874 (Japan); BIRD, JST (Japan)], E-mail: maya@protein.osaka-u.ac.jp; Fujiwara, Yoshie [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Miyata, Tomoko [Graduate School of Frontier Biosciences, Osaka University, 1-3 Yamadaoka, Suita, Osaka 565-0871 (Japan); Morikawa, Kosuke [The Takara-Bio Endowed Division, Institute for Protein Research, Osaka University, 6-2-3 Furuedai, Suita, Osaka 565-0874 (Japan); CREST, JST (Japan)], E-mail: morikako@protein.osaka-u.ac.jp

      2008-01-11

      During the late stage of homologous recombination in prokaryotes, RuvA binds to the Holliday junction intermediate and executes branch migration in association with RuvB. The RuvA subunits form two distinct complexes with the Holliday junction: complex I with the single RuvA tetramer on one side of the four way junction DNA, and complex II with two tetramers on both sides. To investigate the functional roles of complexes I and II, we mutated two residues of RuvA (L125D and E126K) to prevent octamer formation. An electron microscopic analysis indicated that the mutant RuvA/RuvB/Holliday junction DNA complex formed the characteristic tripartite structure, with only one RuvA tetramer bound to one side of the Holliday junction, demonstrating the unexpected stability of this complex. The novel bent images of the complex revealed an intriguing morphological similarity to the structure of SV40 large T antigen, which belongs to the same AAA+ family as RuvB.

    6. Carcinoembryonic antigen promotes colorectal cancer progression by targeting adherens junction complexes

      SciTech Connect (OSTI)

      Bajenova, Olga; Chaika, Nina; Tolkunova, Elena; Davydov-Sinitsyn, Alexander; Gapon, Svetlana; Thomas, Peter; O’Brien, Stephen

      2014-06-10

      Oncomarkers play important roles in the detection and management of human malignancies. Carcinoembryonic antigen (CEA, CEACAM5) and epithelial cadherin (E-cadherin) are considered as independent tumor markers in monitoring metastatic colorectal cancer. They are both expressed by cancer cells and can be detected in the blood serum. We investigated the effect of CEA production by MIP101 colorectal carcinoma cell lines on E-cadherin adherens junction (AJ) protein complexes. No direct interaction between E-cadherin and CEA was detected; however, the functional relationships between E-cadherin and its AJ partners: ?-, ?- and p120 catenins were impaired. We discovered a novel interaction between CEA and beta-catenin protein in the CEA producing cells. It is shown in the current study that CEA overexpression alters the splicing of p120 catenin and triggers the release of soluble E-cadherin. The influence of CEA production by colorectal cancer cells on the function of E-cadherin junction complexes may explain the link between the elevated levels of CEA and the increase in soluble E-cadherin during the progression of colorectal cancer. - Highlights: • Elevated level of CEA increases the release of soluble E-cadherin during the progression of colorectal cancer. • CEA over-expression alters the binding preferences between E-cadherin and its partners: ?-, ?- and p120 catenins in adherens junction complexes. • CEA produced by colorectal cancer cells interacts with beta-catenin protein. • CEA over-expression triggers the increase in nuclear beta-catenin. • CEA over-expression alters the splicing of p120 catenin protein.

    7. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint

      SciTech Connect (OSTI)

      Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

      2006-05-01

      We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

    8. The effect of environmental coupling on tunneling of quasiparticles in Josephson junctions

      E-Print Network [OSTI]

      Mohammad H. Ansari; Frank K. Wilhelm; Urbasi Sinha; Aninda Sinha

      2013-11-07

      We study quasiparticle tunneling in Josephson tunnel junctions embedded in an electromagnetic environment. We identify tunneling processes that transfer electrical charge and couple to the environment in a way similar to that of normal electrons, and processes that mix electrons and holes and are thus creating charge superpositions. The latter are sensitive to the phase difference between the superconductor and are thus limited by phase diffusion even at zero temperature. We show that the environmental coupling is suppressed in many environments, thus leading to lower quasiparticle decay rates and thus better superconductor qubit coherence than previously expected. Our approach is nonperturbative in the environmental coupling strength.

    9. Multi-state magnetoresistance in ferromagnet/organic-ferromagnet/ferromagnet junctions

      SciTech Connect (OSTI)

      Hu, G. C. Zuo, M. Y.; Li, Y.; Ren, J. F.; Xie, S. J.

      2014-01-20

      Spin-dependent transport through a ferromagnetic metal/organic-ferromagnet/ferromagnet metal junction is investigated theoretically. It is demonstrated that the current through the device strongly depends on the alignment of the magnetization orientations of the electrodes and interlayer. The spin-related electron tunnelling between the ferromagnetic electrodes suffers a further spin selection induced by the spin-polarized states of the central organic ferromagnet. This work indicates an intriguing prospect of organic ferromagnets in spintronic devices, such as four-state magnetoresistance manipulated by a magnetic field.

    10. A Mathematical Aspect of A Tunnel-Junction for Spintronic Qubit

      E-Print Network [OSTI]

      Masao Hirokawa; Takuya Kosaka

      2013-09-05

      We consider the Dirac particle living in the 1-dimensional configuration space with a junction for a spintronic qubit. We give concrete formulae explicitly showing the one-to-one correspondence between every self-adjoint extension of the minimal Dirac operator and the boundary condition of the wave functions of the Dirac particle. We then show that the boundary conditions are classified into two types: one of them is characterized by two parameters and the other is by three parameters. Then, we show that Benvegnu and Dabrowski's four-parameter family can actually be characterized by three parameters, concerned with the reflection, penetration, and phase factor.

    11. Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

      SciTech Connect (OSTI)

      Tomasello, R.; Carpentieri, M.; Finocchio, G.

      2013-12-16

      This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed.

    12. T-junction waveguide-based combining high power microwave beams

      SciTech Connect (OSTI)

      Zhang Qiang; Yuan Chengwei; Liu Lie [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

      2011-08-15

      Waveguide-based combining microwave beams is an attractive technique for enhancing the output capacities of narrow-band high power microwave devices. A specific T-junction combiner is designed for combining the X/X band microwave beams, and the detailed combining method and experimental results are presented. In the experiments, two microwave sources which can generate gigawatt level microwaves are driven by a single accelerator simultaneously, and their operation frequencies are 9.41 and 9.60 GHz, respectively. The two microwave beams with durations of about 35 ns have been successfully combined, and no breakdown phenomenon occurs.

    13. Unpaired Majorana modes in Josephson-Junction Arrays with gapless bulk excitations

      DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

      Pino, M.; Tsvelik, A.; Ioffe, L. B.

      2015-11-06

      In this study, the search for Majorana bound states in solid-state physics has been limited to materials that display a gap in their bulk spectrum. We show that such unpaired states appear in certain quasi-one-dimensional Josephson-junction arrays with gapless bulk excitations. The bulk modes mediate a coupling between Majorana bound states via the Ruderman-Kittel-Yosida-Kasuya mechanism. As a consequence, the lowest energy doublet acquires a finite energy difference. For a realistic set of parameters this energy splitting remains much smaller than the energy of the bulk eigenstates even for short chains of length L~10.

    14. Dense, layered membranes for hydrogen separation

      DOE Patents [OSTI]

      Roark, Shane E.; MacKay, Richard; Mundschau, Michael V.

      2006-02-21

      This invention provides hydrogen-permeable membranes for separation of hydrogen from hydrogen-containing gases. The membranes are multi-layer having a central hydrogen-permeable layer with one or more catalyst layers, barrier layers, and/or protective layers. The invention also relates to membrane reactors employing the hydrogen-permeable membranes of the invention and to methods for separation of hydrogen from a hydrogen-containing gas using the membranes and reactors. The reactors of this invention can be combined with additional reactor systems for direct use of the separated hydrogen.

    15. Solar cell with silicon oxynitride dielectric layer

      DOE Patents [OSTI]

      Shepherd, Michael; Smith, David D

      2015-04-28

      Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0layer is disposed on the back surface of the portion of the substrate. A semiconductor layer is disposed on the silicon oxynitride dielectric layer.

    16. General Comparison of Power Loss in Single-Layer and Multi-Layer Windings

      E-Print Network [OSTI]

      General Comparison of Power Loss in Single-Layer and Multi-Layer Windings M. E. Dale C. R. Sullivan the IEEE. #12;General Comparison of Power Loss in Single-Layer and Multi-Layer Windings Magdalena E. Dale Found in IEEE Power Electronics Specialists Conference, June 2005, pp. 582­589. c 2005 IEEE. Personal

    17. Tunable staged release of therapeutics from layer-by-layer coatings with clay interlayer barrier

      E-Print Network [OSTI]

      Tunable staged release of therapeutics from layer-by-layer coatings with clay interlayer barrier of coatings for medical devices and tissue engineering scaffolds, there is a need for thin coatings a self-assembled, polymer-based conformal coating, built by using a water-based layer-by-layer (Lb

    18. Atomic Layer DepositionAtomic Layer Deposition (ALD) Conformality in(ALD) Conformality in

      E-Print Network [OSTI]

      Rubloff, Gary W.

      Atomic Layer DepositionAtomic Layer Deposition (ALD) Conformality in(ALD) Conformality in Nanopores, removal of template, and subsequent TEM analysis. Significance Atomic layer deposition (ALD) is widely in Nanopores Intellectual merit While atomic layer deposition (ALD) enables unprecedented control of atomic

    19. Unraveling the voltage fade mechanism in layer Li-Mn-rich electrode: formation of the tetrahedral cations for spinel conversion

      SciTech Connect (OSTI)

      Mohanty, Debasish [ORNL; Li, Jianlin [ORNL; Abraham, Daniel P [Argonne National Laboratory (ANL); Huq, Ashfia [ORNL; Payzant, E Andrew [ORNL; Wood III, David L [ORNL; Daniel, Claus [ORNL

      2014-01-01

      Discovery of high-voltage layered lithium-and manganese-rich (LMR) composite oxide electrode has dramatically enhanced the energy density of current Li-ion energy storage systems. However, practical usage of these materials is currently not viable because of their inability to maintain a consistent voltage profile (voltage fading) during subsequent charge-discharge cycles. This report rationalizes the cause of this voltage fade by providing the evidence of layer to spinel-like (LSL) structural evolution pathways in the host Li1.2Mn0.55Ni0.15Co0.1O2 LMR composite oxide. By employing neutron powder diffraction, and temperature dependent magnetic susceptibility, we show that LSL structural rearrangement in LMR oxide occurs through a tetrahedral cation intermediate via: i) diffusion of lithium atoms from octahedral to tetrahedral sites of the lithium layer [(LiLioct LiLitet] which is followed by the dispersal of the lithium ions from the adjacent octahedral site of the metal layer to the tetrahedral sites of lithium layer [LiTM oct LiLitet]; and ii) migration of Mn from the octahedral sites of the transition metal layer to the permanent octahedral site of lithium layer via tetrahedral site of lithium layer [MnTMoct MnLitet MnLioct)]. The findings opens the door to the potential routes to mitigate this atomic restructuring in the high-voltage LMR composite oxide cathodes by manipulating the composition/structure for practical use in high-energy-density lithium-ion batteries.

    20. Electron transport in graphene/graphene side-contact junction by plane-wave multiple scattering method

      E-Print Network [OSTI]

      Li, Xiang-Guo; Zhang, X -G; Cheng, Hai-Ping

      2015-01-01

      Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such geometry presents a challenge to first-principles transport methods. We solve this problem by implementing a plane-wave based multiple scattering theory for electron transport. This implementation improves the computational efficiency over the existing plane-wave transport code, scales better for parallelization over large number of nodes, and does not require the current direction to be along a lattice axis. As a first application, we calculate the tunneling current through a side-contact graphene junction formed by two separate graphene sheets with the edges overlapping each other. We find that transport properties of this junction depend strongly on the AA or AB stacking within the overlapping region as well as the vacuum gap between two graphene sheets. Such transport beh...

    1. A Lattice Boltzmann study of the effects of viscoelasticity on droplet formation in microfluidic cross-junctions

      E-Print Network [OSTI]

      Gupta, Anupam

      2015-01-01

      Based on mesoscale lattice Boltzmann (LB) numerical simulations, we investigate the effects of viscoelasticity on the break-up of liquid threads in microfluidic cross-junctions, where droplets are formed by focusing a liquid thread of a dispersed (d) phase into another co-flowing continuous (c) immiscible phase. Working at small Capillary numbers, we investigate the effects of non-Newtonian phases in the transition from droplet formation at the cross-junction (DCJ) to droplet formation downstream of the cross-junction (DC) (Liu $\\&$ Zhang, ${\\it Phys. ~Fluids.}$ ${\\bf 23}$, 082101 (2011)). We will analyze cases with ${\\it Droplet ~Viscoelasticity}$ (DV), where viscoelastic properties are confined in the dispersed phase, as well as cases with ${\\it Matrix ~Viscoelasticity}$ (MV), where viscoelastic properties are confined in the continuous phase. Moderate flow-rate ratios $Q \\approx {\\cal O}(1)$ of the two phases are considered in the present study. Overall, we find that the effects are more pronounced in ...

    2. Multijunction photovoltaic device and method of manufacture

      DOE Patents [OSTI]

      Arya, Rejeewa R. (Jamison, PA); Catalano, Anthony W. (Boulder, CO); Bennett, Murray (Longhorne, PA)

      1995-04-04

      A multijunction photovoltaic device includes first, second, and third amorphous silicon p-i-n photovoltaic cells in a stacked arrangement. The intrinsic layers of the second and third cells are formed of a-SiGe alloys with differing ratios of Ge such that the bandgap of the intrinsic layers respectively decrease from the first uppermost cell to the third lowermost cell. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one of the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers.

    3. Multiple pass and multiple layer friction stir welding and material enhancement processes

      DOE Patents [OSTI]

      Feng, Zhili (Knoxville, TN) [Knoxville, TN; David, Stan A. (Knoxville, TN) [Knoxville, TN; Frederick, David Alan (Harriman, TN) [Harriman, TN

      2010-07-27

      Processes for friction stir welding, typically for comparatively thick plate materials using multiple passes and multiple layers of a friction stir welding tool. In some embodiments a first portion of a fabrication preform and a second portion of the fabrication preform are placed adjacent to each other to form a joint, and there may be a groove adjacent the joint. The joint is welded and then, where a groove exists, a filler may be disposed in the groove, and the seams between the filler and the first and second portions of the fabrication preform may be friction stir welded. In some embodiments two portions of a fabrication preform are abutted to form a joint, where the joint may, for example, be a lap joint, a bevel joint or a butt joint. In some embodiments a plurality of passes of a friction stir welding tool may be used, with some passes welding from one side of a fabrication preform and other passes welding from the other side of the fabrication preform.

    4. Automatic position calculating imaging radar with low-cost synthetic aperture sensor for imaging layered media

      DOE Patents [OSTI]

      Mast, Jeffrey E. (Livermore, CA)

      1998-01-01

      An imaging system for analyzing structures comprises a radar transmitter and receiver connected to a timing mechanism that allows a radar echo sample to be taken at a variety of delay times for each radar pulse transmission. The radar transmitter and receiver are coupled to a position determining system that provides the x,y position on a surface for each group of samples measured for a volume from the surface. The radar transmitter and receiver are moved about the surface to collect such groups of measurements from a variety of x,y positions. Return signal amplitudes represent the relative reflectivity of objects within the volume and the delay in receiving each signal echo represents the depth at which the object lays in the volume and the propagation speeds of the intervening material layers. Successively deeper z-planes are backward propagated from one layer to the next with an adjustment for variations in the expected propagation velocities of the material layers that lie between adjacent z-planes.

    5. Automatic position calculating imaging radar with low-cost synthetic aperture sensor for imaging layered media

      DOE Patents [OSTI]

      Mast, J.E.

      1998-08-18

      An imaging system for analyzing structures comprises a radar transmitter and receiver connected to a timing mechanism that allows a radar echo sample to be taken at a variety of delay times for each radar pulse transmission. The radar transmitter and receiver are coupled to a position determining system that provides the x,y position on a surface for each group of samples measured for a volume from the surface. The radar transmitter and receiver are moved about the surface to collect such groups of measurements from a variety of x,y positions. Return signal amplitudes represent the relative reflectivity of objects within the volume and the delay in receiving each signal echo represents the depth at which the object lays in the volume and the propagation speeds of the intervening material layers. Successively deeper z-planes are backward propagated from one layer to the next with an adjustment for variations in the expected propagation velocities of the material layers that lie between adjacent z-planes. 10 figs.

    6. Detrital Zircon Geochronology and Sequence Stratigraphy of the Eureka Quartzite Formation Adjacent to the Tooele Arch, Western Utah and Eastern Nevada 

      E-Print Network [OSTI]

      Lira, Mario Alberto

      2015-08-09

      GEOCHRONOLOGY AND SEQUENCE STRATIGRAPHY OF THE EUREKA QUARTZITE FORMATION ADJACENT TO THE TOOELE ARCH, WESTERN UTAH AND EASTERN NEVADA A Thesis by MARIO ALBERTO LIRA Submitted to the Office of Graduate and Professional Studies of Texas A&M University... or relatively thin between Early and Late Ordovician strata across the broad, west-east oriented Tooele Arch (Webb, 1956, 1958; Hintze, 1959). Detrital zircon geochronology of Middle-Late Ordovician quartz arenite suggests the source for the Ordovician quartz...

    7. Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

      SciTech Connect (OSTI)

      Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

      2012-04-15

      We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

    8. e pn semiconductor junctions exhibit nonlinear currentvoltage characteristics and they are used to rectify and shape electrical signals. Exponential currentvoltage characteristics are sometimes used

      E-Print Network [OSTI]

      Wilamowski, Bogdan Maciej

      circuits. ere are over 20 different types of diodes using different properties of pn junctions or metal­semiconductor;8-2 Fundamentals of Industrial Electronics 8.1.1 pnJunctionEquation e n-type semiconductor material has a positive by free moving electrons with negative charges. Similarly, the p-type semiconductor material has a lattice

    9. NREL researchers develop a new tool that confirms the stability of the IMM solar cell's 1-eV metamorphic junction.

      E-Print Network [OSTI]

      .friedman@nrel.gov References: J.F. Geisz et al."40.8% Efficient Inverted Triple-Junction Solar cell with Two IndependentlyV metamorphic junction. To test the robustness of NREL's inverted metamorphic multijunction (IMM) solarNREL researchers develop a new tool that confirms the stability of the IMM solar cell's 1-e

    10. Observation of Energy Levels Quantization in Underdamped Josephson Junctions above the Classical-Quantum Regime Crossover Temperature

      SciTech Connect (OSTI)

      Silvestrini, P.; Ruggiero, B.; Russo, M.; Silvestrini, P.; Ruggiero, B.; Russo, M.; Palmieri, V.G.

      1997-10-01

      We present a clear observation of the presence of energy levels quantization in high quality Nb-AlO{sub x} -Nb underdamped Josephson junctions at temperatures above the quantum crossover temperature. This has been possible by extending the measurements of the escape rate out of the zero-voltage state at higher sweeping frequency (dI/dt up to 25A/sec) in order to induce nonstationary conditions in the energy potential describing the junction dynamics. {copyright} {ital 1997} {ital The American Physical Society}

    11. Quantitative interpretation of the transition voltages in gold-poly(phenylene) thiol-gold molecular junctions

      SciTech Connect (OSTI)

      Wu, Kunlin; Bai, Meilin; Hou, Shimin; Sanvito, Stefano

      2013-11-21

      The transition voltage of three different asymmetric Au/poly(phenylene) thiol/Au molecular junctions in which the central molecule is either benzene thiol, biphenyl thiol, or terphenyl thiol is investigated by first-principles quantum transport simulations. For all the junctions, the calculated transition voltage at positive polarity is in quantitative agreement with the experimental values and shows weak dependence on alterations of the Au-phenyl contact. When compared to the strong coupling at the Au-S contact, which dominates the alignment of various molecular orbitals with respect to the electrode Fermi level, the coupling at the Au-phenyl contact produces only a weak perturbation. Therefore, variations of the Au-phenyl contact can only have a minor influence on the transition voltage. These findings not only provide an explanation to the uniformity in the transition voltages found for ?-conjugated molecules measured with different experimental methods, but also demonstrate the advantage of transition voltage spectroscopy as a tool for determining the positions of molecular levels in molecular devices.

    12. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

      SciTech Connect (OSTI)

      Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

      2014-10-21

      The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

    13. Junction silicon solar cells made with molecular beam glow discharge bombardment

      SciTech Connect (OSTI)

      Caine, E.J.

      1982-01-01

      The fabrication of silicon PN junction solar cells with molecular implanted emitter regions is described. A simple, economical high current (0.5 mA/cm/sup 2/), low voltage (4-6 kV) glow discharge apparatus without any ion mass separation is used for implantation. The discharge beam is characterized with a current-voltage conduction curve, radial profile of target sheet resistance and operating temperature of implant target. Molecular implantation compounds discussed include: boron trifluoride, trimethyl borate, boron trichloride, trimethyl phosphite, arsenic trifluoride, phosphorus trichloride, phosphorus oxychloride and arsenic trichloride. Annealing is accomplished with a Q-switched ruby laser and with a standard diffusion furnace. Solar cell performance parameters (conversion efficiency, quantum efficiency and junction ideality) are compared with cells conventionally implanted at 30 keV with /sup 11/B and /sup 31/P and cells made with a standard open tube phosphorus oxychloride diffusion. Cell substrate thickness was found to limit short circuit current. Total area simulated AM1 power conversion efficiencies of molecular cells without antireflection coatings or backsurface fields are at best 8.2% as compared to 9.0% for conventional implanted or diffused devices. To achieve optimum performance, laser light had to be incorporated in the molecular implant annealing procedure.

    14. Controllable fully spin-polarized transport in a ferromagnetically doped topological insulator junction

      SciTech Connect (OSTI)

      Zhou, Benliang; Tang, Dongsheng; Zhou, Guanghui, E-mail: ghzhou@hunnu.edu.cn [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081 (China); Zhou, Benhu [Department of Physics, Shaoyang University, Shaoyang 422001 (China)

      2014-04-21

      We investigate the energy band structure and the spin-dependent transport for a normal/ferromagnetic/normal two-dimension topological insulator (TI) junction. By diagonalizing Hamiltonian for the system, the band structure shows that the edge states on two sides are coupled resulting in a gap opening due to the transverse spatial confinement. Further, the exchange field induced by magnetic impurities can also modulate the band structure with two spin degenerate bands splitting. By using the nonequilibrium Green's function method, the dependence of spin-dependent conductance and spin-polarization on the Fermi energy, the exchange field strength and the ferromagnetic TI (FTI) length are also analyzed, respectively. Interestingly, the degenerate conductance plateaus for spin-up and -down channels are broken, and both the conductances are suppressed by magnetic impurities due to the time-reversal symmetry broken and inelastic scattering. The spin-dependent conductance shows different behaviors when the Fermi energy is tuned into different ranges. Moreover, the conductance can be fully spin polarized by tuning the Fermi energy and the exchange field strength, or by tuning the Fermi energy and the FTI length. Consequently, the junction can transform from a quantum spin Hall state to a quantum anomalous Hall state, which is very important to enable dissipationless charge current for designing perfect spin filter.

    15. Impacts of Sedimentation from Oil and Gas Development on Stream Macroinvertebrates in Two Adjacent Watersheds of the Allegheny National Forest of Northwestern Pennsylvania

      SciTech Connect (OSTI)

      Fritz, K.; Harris, S.; Edenborn, H.M.; Sams, J.

      2011-01-01

      Fritz, Kelley'*, Steven Harris', Harry Edenborn2, and James Sams2. 'Clarion University of Pennsylvania, Clarion, PA 16214, 2National Energy Technology Laboratory, U.S. Dept. Energy, Pittsburgh, PA 15236. Impacts a/Sedimentation/rom Oil and Gas Development on Stream Macroinvertebrates in Two Adjacent Watersheds a/the Allegheny National Forest a/Northwestern Pennsylvania - The Allegheny National Forest (ANF), located in northwestern Pennsy Ivania, is a multiuse forest combining commercial development with recreational and conservation activities. As such, portions of the ANF have been heavily logged and are now the subject of widespread oil and gas development. This rapid increase in oil and gas development has led to concerns about sediment runoff from the dirt and gravel roads associated with development and the potential impact on the aquatic biota of the receiving streams. We examined and compared the benthic macroinvertebrate communities in two adjacent watersheds of similar size and topography in the ANF; the Hedgehog Run watershed has no oil and gas development, while the adjacent Grunder Run watershed has extensive oil and gas development. In Hedgehog and Grunder Run, we collected monthly kicknet samples from riffles and glides at two sites from April to October 2010. At the same intervals, we measured standard water quality parameters, including conductivity and turbidity. Preliminary results have indicated much higher turbidity in Grunder Run, but little difference in the diversity and abundance of benthic macro invertebrates inhabiting the two streams.

    16. VOLUME 77, NUMBER 20 P H Y S I C A L R E V I E W L E T T E R S 11 NOVEMBER 1996 One-Dimensional Localization of Quantum Vortices in Disordered Josephson Junction Arrays

      E-Print Network [OSTI]

      van Oudenaarden, Alexander

      of a square network of Josephson junctions in which each superconducting island is coupled to four nearest

    17. Electrical Engineering and Computer Cross-Layer Design

      E-Print Network [OSTI]

      Electrical Engineering and Computer Science Cross-Layer Design and Analysis of Wireless Networks Wayne Stark Achilleas Anastasopoulos, Shihyu Chang, Hua Wang University of Michigan #12;Electrical Layer Design #12;Electrical Engineering and Computer Science Layered Approach Presentation Layer Session

    18. Method to fabricate layered material compositions

      DOE Patents [OSTI]

      Fleming, James G. (Albuquerque, NM); Lin, Shawn-Yu (Albuquerque, NM)

      2002-01-01

      A new class of processes suited to the fabrication of layered material compositions is disclosed. Layered material compositions are typically three-dimensional structures which can be decomposed into a stack of structured layers. The best known examples are the photonic lattices. The present invention combines the characteristic features of photolithography and chemical-mechanical polishing to permit the direct and facile fabrication of, e.g., photonic lattices having photonic bandgaps in the 0.1-20.mu. spectral range.

    19. Method to fabricate layered material compositions

      DOE Patents [OSTI]

      Fleming, James G.; Lin, Shawn-Yu

      2004-11-02

      A new class of processes suited to the fabrication of layered material compositions is disclosed. Layered material compositions are typically three-dimensional structures which can be decomposed into a stack of structured layers. The best known examples are the photonic lattices. The present invention combines the characteristic features of photolithography and chemical-mechanical polishing to permit the direct and facile fabrication of, e.g., photonic lattices having photonic bandgaps in the 0.1-20.mu. spectral range.

    20. Superconductive articles including cerium oxide layer

      DOE Patents [OSTI]

      Wu, Xin D. (Greenbelt, MD); Muenchausen, Ross E. (Espanola, NM)

      1993-01-01

      A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.

    1. Nanomanufacturing : nano-structured materials made layer-by-layer.

      SciTech Connect (OSTI)

      Cox, James V.; Cheng, Shengfeng; Grest, Gary Stephen; Tjiptowidjojo, Kristianto; Reedy, Earl David, Jr.; Fan, Hongyou; Schunk, Peter Randall; Chandross, Michael Evan; Roberts, Scott A.

      2011-10-01

      Large-scale, high-throughput production of nano-structured materials (i.e. nanomanufacturing) is a strategic area in manufacturing, with markets projected to exceed $1T by 2015. Nanomanufacturing is still in its infancy; process/product developments are costly and only touch on potential opportunities enabled by growing nanoscience discoveries. The greatest promise for high-volume manufacturing lies in age-old coating and imprinting operations. For materials with tailored nm-scale structure, imprinting/embossing must be achieved at high speeds (roll-to-roll) and/or over large areas (batch operation) with feature sizes less than 100 nm. Dispersion coatings with nanoparticles can also tailor structure through self- or directed-assembly. Layering films structured with these processes have tremendous potential for efficient manufacturing of microelectronics, photovoltaics and other topical nano-structured devices. This project is designed to perform the requisite R and D to bring Sandia's technology base in computational mechanics to bear on this scale-up problem. Project focus is enforced by addressing a promising imprinting process currently being commercialized.

    2. Electrical isolation of component cells in monolithically interconnected modules

      DOE Patents [OSTI]

      Wanlass, Mark W. (Golden, CO)

      2001-01-01

      A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.

    3. Optimization of exchange bias in Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler alloy layers

      SciTech Connect (OSTI)

      Hirohata, Atsufumi; Izumida, Keisuke; Ishizawa, Satoshi; Nakayama, Tadachika; Sagar, James

      2014-05-07

      We have fabricated and investigated IrMn{sub 3}/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} stacks to meet the criteria for future spintronic device applications which requires low-temperature crystallisation (<250?°C) and a large exchange bias H{sub ex} (>500?Oe). Such a system would form the pinned layer in spin-valve or tunnel junction applications. We have demonstrated that annealing at 300?°C which can achieve crystalline ordering in the Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} layer giving ?80% of the predicted saturation magnetisation. We have also induced an exchange bias of ?240?Oe at the interface. These values are close to the above criteria and confirm the potential of using antiferromagnet/Heusler-alloy stacks in current Si-based processes.

    4. Combustion fronts in porous media with two layers Steve Schecter

      E-Print Network [OSTI]

      Schecter, Stephen

      Combustion fronts in porous media with two layers layer 1 layer 2 Steve Schecter North Carolina Subject: Propagation of a combustion front through a porous medium with two parallel layers having different properties. · Each layer admits a traveling combustion wave. · The layers are coupled by heat

    5. Electronic Transport in Few-layer Graphene

      E-Print Network [OSTI]

      Zhao, Zeng

      2013-01-01

      in Charge Neutral Bilayer Graphene Introduction In thisstudy on heterogeneous graphene devices in a differentto probe few layer graphene to determine their dependence on

    6. Organic photovoltaic cells utilizing ultrathin sensitizing layer

      DOE Patents [OSTI]

      Forrest, Stephen R. (Ann Arbor, MI); Yang, Fan (Piscataway, NJ); Rand, Barry P. (Somers, NY)

      2011-09-06

      A photosensitive device includes a plurality of organic photoconductive materials disposed in a stack between a first electrode and a second electrode, including a first continuous layer of donor host material, a second continuous layer of acceptor host material, and at least one other organic photoconductive material disposed as a plurality of discontinuous islands between the first continuous layer and the second continuous layer. Each of these other photoconductive materials has an absorption spectra different from the donor host material and the acceptor host material. Preferably, each of the discontinuous islands consists essentially of a crystallite of the respective organic photoconductive material, and more preferably, the crystallites are nanocrystals.

    7. Sodium-layer laser guide stars

      SciTech Connect (OSTI)

      Friedman, H.W.

      1993-08-03

      The requirements and design of a laser system to generate a sodium- layer beacon is presented. Early results of photometry and wavefront sensing are given.

    8. Enhanced Densification of SDC Barrier Layers

      SciTech Connect (OSTI)

      Hardy, John S.; Templeton, Jared W.; Lu, Zigui; Stevenson, Jeffry W.

      2011-09-12

      This technical report explores the Enhanced Densification of SCD Barrier Layers A samaria-doped ceria (SDC) barrier layer separates the lanthanum strontium cobalt ferrite (LSCF) cathode from the yttria-stabilized zirconia (YSZ) electrolyte in a solid oxide fuel cell (SOFC) to prevent the formation of electrically resistive interfacial SrZrO{sub 3} layers that arise from the reaction of Sr from the LSCF with Zr from the YSZ. However, the sintering temperature of this SDC layer must be limited to {approx}1200 C to avoid extensive interdiffusion between SDC and YSZ to form a resistive CeO{sub 2}-ZrO{sub 2} solid solution. Therefore, the conventional SDC layer is often porous and therefore not as impervious to Sr-diffusion as would be desired. In the pursuit of improved SOFC performance, efforts have been directed toward increasing the density of the SDC barrier layer without increasing the sintering temperature. The density of the SDC barrier layer can be greatly increased through small amounts of Cu-doping of the SDC powder together with increased solids loading and use of an appropriate binder system in the screen print ink. However, the resulting performance of cells with these barrier layers did not exhibit the expected increase in accordance with that achieved with the prototypical PLD SDC layer. It was determined by XRD that increased sinterability of the SDC also results in increased interdiffusivity between the SDC and YSZ, resulting in formation of a highly resistive solid solution.

    9. The benzene metabolite trans,trans-muconaldehyde blocks gap junction intercellular communication by cross-linking connexin43

      SciTech Connect (OSTI)

      Rivedal, Edgar Leithe, Edward

      2008-11-01

      Benzene is used at large volumes in many different human activities. Hematotoxicity and cancer-causation as a result of benzene exposure was recognized many years ago, but the mechanisms involved remain unclear. Aberrant regulation of gap junction intercellular communication (GJIC) has been linked to both cancer induction and interference with normal hematopoietic development. We have previously suggested that inhibition of GJIC may play a role in benzene toxicity since benzene metabolites were found to block GJIC, the ring-opened trans,trans-muconaldehyde (MUC) being the most potent metabolite. In the present work we have studied the molecular mechanisms underlying the MUC-induced inhibition of gap junctional communication. We show that MUC induces cross-linking of the gap junction protein connexin43 and that this is likely to be responsible for the induced inhibition of GJIC, as well as the loss of connexin43 observed in Western blots. We also show that glutaraldehyde possesses similar effects as MUC, and we compare the effects to that of formaldehyde. The fact that glutaraldehyde and formaldehyde have been associated with induction of leukemia as well as disturbance of hematopoiesis, strengthens the possible link between the effect of MUC on gap junctions, and the toxic effects of benzene.

    10. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes

      E-Print Network [OSTI]

      Wetzel, Christian M.

      Keywords: GaInN/GaN Light emitting diode temperature Micro-Raman Photoluminescence Electroluminescence well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescenceJunction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting

    11. Calcium niobate nanosheets as a novel electron transport material for solution-processed multi-junction polymer solar cells

      E-Print Network [OSTI]

      Osterloh, Frank

      Calcium niobate nanosheets as a novel electron transport material for solution-processed multi-junction polymer solar cells Lilian Chang,a Michael A. Holmes,b Mollie Waller,b Frank E. Osterlohb and Adam J-processed tandem polymer solar cells are demonstrated using stacked perovskite, (TBA,H) Ca2Nb3O10 (CNO

    12. FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE and X. Deng1,2

      E-Print Network [OSTI]

      Deng, Xunming

      FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE SUBSTRATES A. Vijh1,2 , X. Yang1 , W of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous), and the effect of tie coats on film adhesion. INTRODUCTION Amorphous silicon (a-Si) based solar cells

    13. Theory of Graphene-Insulator-Graphene Tunnel Junctions S. C. de la Barrera, Qin Gao, and R. M. Feenstra

      E-Print Network [OSTI]

      Feenstra, Randall

      to vertical graphene-insulator-graphene (GIG) tunneling structures. The first such report dealt with coupled electrodes, the single-particle tunneling characteristics of GIG devices can be highly nonlinear.3 The reason by Britnell et al. from GIG junctions did not display any NDR.4 Indeed, their theoretical description

    14. An ultra-thin buffer layer for Ge epitaxial layers on Si

      SciTech Connect (OSTI)

      Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

      2013-03-25

      Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

    15. Antimicrobial Activity of Cationic Antiseptics in Layer-by-Layer Thin Film Assemblies 

      E-Print Network [OSTI]

      Dvoracek, Charlene M.

      2010-07-14

      Layer-by-layer (LbL) assembly has proven to be a powerful technique for assembling thin films with a variety of properties including electrochromic, molecular sensing, oxygen barrier, and antimicrobial. LbL involves the deposition of alternating...

    16. Surface engineering using layer-by-layer assembly of pH-sensitive polymers and nanoparticles

      E-Print Network [OSTI]

      Lee, Daeyeon

      2007-01-01

      Surface engineering of a variety of materials including colloidal particles and porous membranes has been achieved by using layer-by-layer assembly of pH-sensitive polymers and nanoparticles. In the first part of this ...

    17. Layer-by-layer assembly on polyethylene films via "click" chemistry 

      E-Print Network [OSTI]

      Chance, Brandon Scott

      2009-05-15

      Layer-by-layer assembly has received much attention over the last fifteen years. This assembly process can be carried out using different methods including hydrogen-bonding, electrostatic, and to a lesser extent, covalent ...

    18. Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film

      E-Print Network [OSTI]

      Schmidt, Daniel J.

      This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly ...

    19. Amperometric Glucose Biosensor by Means of Electrostatic Layer-by-layer Adsorption onto Electrospun Polyaniline Fibers 

      E-Print Network [OSTI]

      Shin, Young J.

      2010-07-14

      were formed and collected by electrospinning. Glucose oxidase was immobilized onto these fibers using an electrostatic layer-by-layer adsorption technique. In this method, poly(diallyldimethylammonium chloride) was used as the counter ion source...

    20. Engineering the electrochromism and ion conduction of layer-by-layer assembled films

      E-Print Network [OSTI]

      DeLongchamp, Dean M. (Dean Michael), 1975-

      2003-01-01

      This work applies the processing technique of layer-by-layer (LBL) assembly to the creation and development of new electrochemically active materials. Elements of the thin-film electrochromic cell were chosen as a particular ...

    1. Investigation of photoelectrode redox polymer junctions. Technical report, 16 November-15 January 1984

      SciTech Connect (OSTI)

      Cook, R.L.; Sammells, A.F.

      1985-01-15

      The n-CdS flatband potential in the solid-state cell n-CdS/Nafion 117 + redox species/Au was shifted progressively in a cathode directed upon the introduction of FeCp2, FeCp2 + Ru(bpy)3(2+) into the SPE. This cathodic shift was consistent with that for the oxidation potentials seen for Ru(bpy)3(2+) (E1/2 = 1.25V vs SCE) and FeCp2 (0.285V vs SCE) in acetonitrile. Such perturbations of semiconductor properties can be expected to form the basis of a detector technology when the semiconductor/SPE junction is exposed to selected chemical species.

    2. Interfacial electronic transport phenomena in single crystalline Fe-MgO-Fe thin barrier junctions

      SciTech Connect (OSTI)

      Gangineni, R. B.; Negulescu, B.; Baraduc, C.; Gaudin, G.

      2014-05-05

      Spin filtering effects in nano-pillars of Fe-MgO-Fe single crystalline magnetic tunnel junctions are explored with two different sample architectures and thin MgO barriers (thickness: 3–8 monolayers). The two architectures, with different growth and annealing conditions of the bottom electrode, allow tuning the quality of the bottom Fe/MgO interface. As a result, an interfacial resonance states (IRS) is observed or not depending on this interface quality. The IRS contribution, observed by spin polarized tunnel spectroscopy, is analyzed as a function of the MgO barrier thickness. Our experimental findings agree with theoretical predictions concerning the symmetry of the low energy (0.2?eV) interfacial resonance states: a mixture of ?{sub 1}-like and ?{sub 5}-like symmetries.

    3. Controllable 0 ? ? transition in iron pnictide superconductor junctions with a spacer of strong ferromagnet

      SciTech Connect (OSTI)

      Liu, S. Y.; Tao, Y. C. Ji, T. T.; Di, Y. S.; Hu, J. G.

      2014-03-17

      We investigate the control of 0?? transition in Josephson junctions consisting of a highly spin-polarized ferromagnet coupled to two iron pnictide superconductors (SCs). It is shown that, a 0?? transition as a function of interband coupling strength is always exhibited, which can be experimentally used to discriminate the s{sub ±}-wave pairing symmetry in the iron pnictide SCs from the s{sub ++}-wave one in MgB{sub 2}. By tuning the doping level in the s{sub ±}-wave SCs, one can vary the interband coupling strength so as to obtain the controllable 0?? transition. This device may be realized with current technologies and has practical use in Cooper pair spintronics and quantum information.

    4. A quasi-classical mapping approach to vibrationally coupled electron transport in molecular junctions

      SciTech Connect (OSTI)

      Li, Bin; Miller, William H.; Wilner, Eli Y.; Thoss, Michael

      2014-03-14

      We develop a classical mapping approach suitable to describe vibrationally coupled charge transport in molecular junctions based on the Cartesian mapping for many-electron systems [B. Li and W. H. Miller, J. Chem. Phys. 137, 154107 (2012)]. To properly describe vibrational quantum effects in the transport characteristics, we introduce a simple transformation rewriting the Hamiltonian in terms of occupation numbers and use a binning function to facilitate quantization. The approach provides accurate results for the nonequilibrium Holstein model for a range of bias voltages, vibrational frequencies, and temperatures. It also captures the hallmarks of vibrational quantum effects apparent in step-like structure in the current-voltage characteristics at low temperatures as well as the phenomenon of Franck-Condon blockade.

    5. Steady water waves with multiple critical layers

      E-Print Network [OSTI]

      Mats Ehrnström; Joachim Escher; Erik Wahlén

      2011-04-01

      We construct small-amplitude periodic water waves with multiple critical layers. In addition to waves with arbitrarily many critical layers and a single crest in each period, two-dimensional sets of waves with several crests and troughs in each period are found. The setting is that of steady two-dimensional finite-depth gravity water waves with vorticity.

    6. Layered Manufacturing Sara McMains

      E-Print Network [OSTI]

      McMains, Sara

      Grossman) #12;LM vs. Conventional Manufacturing · Subtractive · Net shape · Additive #12;Conventional · Molding · Casting #12;Conventional Manufacturing · Additive ­ Combine complex sub-units ­ E.g. · WeldingLayered Manufacturing Sara McMains #12;Layered Manufacturing (LM) a.k.a. Solid Freeform Fabrication

    7. Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings

      SciTech Connect (OSTI)

      Long, Rong, E-mail: rlongmech@gmail.com [Department of Mechanical Engineering, University of Alberta, Edmonton, Alberta T6G 2G8 (Canada); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Dunn, Martin L. [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Singapore University of Technology and Design, Singapore 138682 (Singapore)

      2014-06-21

      Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

    8. Epitaxial growth of silicon for layer transfer

      DOE Patents [OSTI]

      Teplin, Charles; Branz, Howard M

      2015-03-24

      Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

    9. SU-E-T-426: Dose Delivery Accuracy in Breast Field Junction for Free Breath and Deep Inspiration Breath Hold Techniques

      SciTech Connect (OSTI)

      Epstein, D; Shekel, E; Levin, D

      2014-06-01

      Purpose: The purpose of this work was to verify the accuracy of the dose distribution along the field junction in a half beam irradiation technique for breast cancer patients receiving radiation to the breast or chest wall (CW) and the supraclavicular LN region for both free breathing and deep inspiration breath hold (DIBH) technique. Methods: We performed in vivo measurements for nine breast cancer patients receiving radiation to the breast/CW and to the supraclavicular LN region. Six patients were treated to the left breast/CW using DIBH technique and three patients were treated to the right breast/CW in free breath. We used five microMOSFET dosimeters: three located along the field junction, one located 1 cm above the junction and the fifth microMOSFET located 1 cm below the junction. We performed consecutive measurements over several days for each patient and compared the measurements to the TPS calculation (Eclipse, Varian™). Results: The calculated and measured doses along the junction were 0.97±0.08 Gy and 1.02±0.14 Gy, respectively. Above the junction calculated and measured doses were 0.91±0.08 Gy and 0.98±0.09 Gy respectively, and below the junction calculated and measured doses were 1.70±0.15 Gy and 1.61±0.09 Gy, respectively. All differences were not statistically significant. When comparing calculated and measured doses for DIBH patients only, there was still no statistically significant difference between values for all dosimeter locations. Analysis was done using the Mann-Whitney Rank-Sum Test. Conclusion: We found excellent correlation between calculated doses from the TPS and measured skin doses at the junction of several half beam fields. Even for the DIBH technique, where there is more potential for variance due to depth of breath, there is no over or underdose along the field junction. This correlation validates the TPS, as well an accurate, reproducible patient setup.

    10. Literature and data review for the surface-water pathway: Columbia River and adjacent coastal areas. Hanford Environmental Dose Reconstruction Project

      SciTech Connect (OSTI)

      Walters, W.H.; Dirkes, R.L.; Napier, B.A.

      1992-04-01

      As part of the Hanford Environmental Dose Reconstruction Project, Pacific Northwest Laboratory reviewed literature and data on radionuclide concentrations and distribution in the water, sediment, and biota of the Columbia River and adjacent coastal areas. Over 600 documents were reviewed including Hanford reports, reports by offsite agencies, journal articles, and graduate theses. Certain radionuclide concentration data were used in preliminary estimates of individual dose for the 1964--1966 time period. This report summarizes the literature and database review and the results of the preliminary dose estimates.

    11. Method for forming a barrier layer

      DOE Patents [OSTI]

      Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palo Alto, CA)

      2002-01-01

      Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

    12. Superconductive articles including cerium oxide layer

      DOE Patents [OSTI]

      Wu, X.D.; Muenchausen, R.E.

      1993-11-16

      A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure. 7 figures.

    13. Building America Technology Solutions for New and Existing Homes: New Insights for Improving the Designs of Flexible Duct Junction Boxes (Fact Sheet)

      Office of Energy Efficiency and Renewable Energy (EERE)

      IBACOS explored the relationships between pressure and physical configurations of flexible duct junction boxes by using computational fluid dynamics simulations to predict individual box parameters and total system pressure, thereby ensuring improved HVAC performance.

    14. Water Uptake in PEMFC Catalyst Layers

      E-Print Network [OSTI]

      Gunterman, Haluna P.

      2013-01-01

      of proton-exchange-membrane fuel-cell catalyst layers arein proton-exchange-membrane fuel cells (PEMFC) is rife withRenewable Energy, Office of Fuel Cell Technologies, of the

    15. Microwave-cut silicon layer transfer

      SciTech Connect (OSTI)

      Thompson, D.C.; Alford, T.L.; Mayer, J.W.; Hochbauer, T.; Nastasi, M.; Lau, S.S.; Theodore, N. David; Henttinen, K.; Suni, Ilkka; Chu, Paul K. [Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287-6006 (United States); Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87544 (United States); Department of Electrical and Computer Engineering, University of California at San Diego, San Diego, California 92093 (United States); Advanced Products Research and Development Laboratory, Freescale Semiconductor Incorporated, 2100 East Elliot Road, Tempe, Arizona 85284 (United States); VTT Centre for Microelectronics, P.O. Box 1208, 02044 VTT (Finland); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

      2005-11-28

      Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.

    16. Double layer capacitors : automotive applications and modeling

      E-Print Network [OSTI]

      New, David Allen, 1976-

      2004-01-01

      This thesis documents the work on the modeling of double layer capacitors (DLCs) and the validation of the modeling procedure. Several experiments were conducted to subject the device under test to a variety of ...

    17. Layered solid sorbents for carbon dioxide capture

      DOE Patents [OSTI]

      Li, Bingyun; Jiang, Bingbing; Gray, McMahan L; Fauth, Daniel J; Pennline, Henry W; Richards, George A

      2014-11-18

      A solid sorbent for the capture and the transport of carbon dioxide gas is provided having at least one first layer of a positively charged material that is polyethylenimine or poly(allylamine hydrochloride), that captures at least a portion of the gas, and at least one second layer of a negatively charged material that is polystyrenesulfonate or poly(acryclic acid), that transports the gas, wherein the second layer of material is in juxtaposition to, attached to, or crosslinked with the first layer for forming at least one bilayer, and a solid substrate support having a porous surface, wherein one or more of the bilayers is/are deposited on the surface of and/or within the solid substrate. A method of preparing and using the solid sorbent is provided.

    18. Multi-layer waste containment barrier

      DOE Patents [OSTI]

      Smith, Ann Marie (Pocatello, ID); Gardner, Bradley M. (Idaho Falls, ID); Nickelson, David F. (Idaho Falls, ID)

      1999-01-01

      An apparatus for constructing an underground containment barrier for containing an in-situ portion of earth. The apparatus includes an excavating device for simultaneously (i) excavating earthen material from beside the in-situ portion of earth without removing the in-situ portion and thereby forming an open side trench defined by opposing earthen sidewalls, and (ii) excavating earthen material from beneath the in-situ portion of earth without removing the in-situ portion and thereby forming a generally horizontal underground trench beneath the in-situ portion defined by opposing earthen sidewalls. The apparatus further includes a barrier-forming device attached to the excavating device for simultaneously forming a side barrier within the open trench and a generally horizontal, multi-layer barrier within the generally horizontal trench. The multi-layer barrier includes at least a first layer and a second layer.

    19. Finite element analysis of shells with layers

      E-Print Network [OSTI]

      Hiller, Jean-François, 1974-

      2002-01-01

      It is well established that thin shell structures frequently feature narrow bands of strain concentration and localized displacement irregularities referred to as boundary and internal layers. It is crucial to capture these ...

    20. Counting molecular-beam grown graphene layers

      SciTech Connect (OSTI)

      Plaut, Annette S.; Wurstbauer, Ulrich; Pinczuk, Aron; Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 ; Garcia, Jorge M.; Pfeiffer, Loren N.

      2013-06-17

      We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

    1. Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

      SciTech Connect (OSTI)

      Kanai, S.; Nakatani, Y.; Yamanouchi, M.; Ikeda, S.; Sato, H.; Matsukura, F.; Ohno, H.

      2014-05-26

      We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone.

    2. Design of Cyclic-ADT Peptides to Improve Drug Delivery to the Brain via Inhibition of E-Cadherin Interactions at the Adherens Junction

      E-Print Network [OSTI]

      Laksitorini, Marlyn Dian

      2012-08-31

      ]. This disrupts the tight junction integrity as observed by the lowering of TEER values and increased inulin transport across MDCK monolayers. An FDA-approved adenosine agonist (Lexiscan) can alter RhoA and Rac1 and cause cellular cytoskeleton rearrangement...]. This disrupts the tight junction integrity as observed by the lowering of TEER values and increased inulin transport across MDCK monolayers. An FDA-approved adenosine agonist (Lexiscan) can alter RhoA and Rac1 and cause cellular cytoskeleton rearrangement...

    3. Optical devices featuring nonpolar textured semiconductor layers

      DOE Patents [OSTI]

      Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

      2013-11-26

      A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

    4. Optical devices featuring textured semiconductor layers

      DOE Patents [OSTI]

      Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

      2011-10-11

      A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

    5. Optical devices featuring textured semiconductor layers

      DOE Patents [OSTI]

      Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

      2012-08-07

      A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

    6. Analytical Layer Planning for Nanometer VLSI Designs 

      E-Print Network [OSTI]

      Chang, Chi-Yu

      2012-10-19

      i ANALYTICAL LAYER PLANNING FOR NANOMETER VLSI DESIGNS A Thesis by CHI-YU CHANG Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree of MASTER... OF SCIENCE August 2012 Major Subject: Electrical Engineering ii ANALYTICAL LAYER PLANNING FOR NANOMETER VLSI DESIGNS A Thesis by CHI-YU CHANG Submitted to the Office of Graduate Studies of Texas A&M University in partial...

    7. Tip-contact related low-bias negative differential resistance and rectifying effects in benzene–porphyrin–benzene molecular junctions

      SciTech Connect (OSTI)

      Cheng, Jue-Fei; Zhou, Liping E-mail: leigao@suda.edu.cn; Liu, Man; Yan, Qiang; Han, Qin; Gao, Lei E-mail: leigao@suda.edu.cn

      2014-11-07

      The electronic transport properties of benzene–porphyrin–benzene (BPB) molecules coupled to gold (Au) electrodes were investigated. By successively removing the front-end Au atoms, several BPB junctions with different molecule-electrode contact symmetries were constructed. The calculated current–voltage (I–V) curves depended strongly on the contact configurations between the BPB molecules and the Au electrodes. In particular, a significant low-voltage negative differential resistance effect appeared at ?0.3 V in the junctions with pyramidal electrodes on both sides. Along with the breaking of this tip-contact symmetry, the low-bias negative differential resistance effect gradually disappeared. This tip-contact may be ideal for use in the design of future molecular devices because of its similarity with experimental processes.

    8. Tunnel Hunter: Detecting Application-Layer Tunnels with Statistical Fingerprinting

      E-Print Network [OSTI]

      Salgarelli, Luca

      Tunnel Hunter: Detecting Application-Layer Tunnels with Statistical Fingerprinting M. Dusi, M, Italy Abstract Application-layer tunnels nowadays represent a significant security threat for any network protected by firewalls and Application Layer Gateways. The encapsulation of protocols subject

    9. Ion-Exchangeable, Electronically Conducting Layered Perovskite Oxyfluorides

      E-Print Network [OSTI]

      Ion-Exchangeable, Electronically Conducting Layered Perovskite Oxyfluorides Yoji Kobayashi@chem.psu.edu Abstract: Cation-exchangeable d0 layered perovskites are amenable to intercalation, exfoliation of mixed-valent perovskites. Conversely, electronically and magnetically interesting layered perovskites

    10. Integrated Sustainability Analysis of Atomic Layer Deposition for Microelectronics Manufacturing

      E-Print Network [OSTI]

      Yuan, Chris Yingchun; David Dornfeld

      2010-01-01

      E. , 2002, “Thin Film Atomic Layer Deposition Equipment forA. , 2000, “Atomic Layer Deposition of Titanium Oxide FromHarsta, A. , 2001, “Atomic Layer Deposition of Zirco- nium

    11. Atomic Layer Deposition Enabled Synthesis of Multiferroic Nanostructures

      E-Print Network [OSTI]

      Pham, Calvin Dinh-Tu

      2015-01-01

      Thin Films by Atomic Layer Deposition." Advanced FunctionalPlasma enhanced atomic layer deposition of HfO 2 and ZrO 2et al. (2003). "Atomic Layer Deposition (ALD) of Bismuth

    12. Lean NOx Reduction with Dual Layer LNT/SCR Catalysts

      Broader source: Energy.gov [DOE]

      Results show that a series of dual layer catalysts with a bottom layer of LNT catalyst and a top layer of SCR catalyst can carry out coupled ammonia generation and NOx reduction, achieving high NOx conversion with minimal ammonia slip

    13. Movement of the boundary of a p-n junction in GaAs:Si under gyrotronic irradiation

      SciTech Connect (OSTI)

      Sukach, G. A.; Kidalov, V. V.

      2011-12-15

      It is shown that, by using a gyratron, it is possible to control the position of a p-n junction in an already fabricated light-emitting structure. A shift of the compensated region in the emitting structure based on GaAs:Si is caused by the motion of impurities in the field of thermoelastic stresses appearing in the course of sample cooling after gyrotronic irradiation.

    14. The effects of laser scanning on the characteristics of a p-n junction diode in dislocated silicon 

      E-Print Network [OSTI]

      Michael, Mark Wayne

      1984-01-01

      interface effects. The guard ring region extends deeper and is more lightly doped than the diode region under investigation. The lighter doping of the guard ring results in a higher breakdown voltage than the diode region. This insures that the observed...THE EFFECTS OF LASER SCANNING ON THE CHARACTERISTICS OF A p-n JUNCTION DIODE IN DISLOCATED SILICON A Thesis by NARK WAYNE MICHAEL Submitted to the Graduate College of Texas ARM University in partial fulfillment for the degree of MASTER...

    15. Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS{sub 2} films

      SciTech Connect (OSTI)

      Sutar, Surajit; Agnihotri, Pratik; Comfort, Everett; Ung Lee, Ji; Taniguchi, T.; Watanabe, K.

      2014-03-24

      Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS{sub 2}. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS{sub 2} flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS{sub 2} flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4{sub kB}T is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.

    16. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

      SciTech Connect (OSTI)

      Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

      2006-01-01

      Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

    17. Direct probing of density of states of reduced graphene oxides in a wide voltage range by tunneling junction

      E-Print Network [OSTI]

      Lin, Minn-Tsong

      devices are fabricated with an aluminum oxide layer inserted in between electrodes and rGO sheets-ionized water. A substrate of highly doped Si wafer was capped with a 300-nm thick oxide layer and deposited

    18. Metal-sensing layer-semiconductor and metal-sensing layer-metal heterostructure gas sensors

      SciTech Connect (OSTI)

      O'Leary, M.; Li, Zheng; Fonash, S.J.

      1987-01-01

      Extremely sensitive gas sensors can be fabricated using heterostructures of the form metal-sensing layer-semiconductor or metal-sensing layer-metal. These structures are heterostructure diodes which have the barrier controlling transport at least partially located in the sensing layer. In the presence of the gas species to be detected, the electrical properties of the sensing layer evolve, resulting in a modification of the barrier to electric current transport and, hence, resulting in detection due to changes in the current-voltage characteristics of the device. This type of sensor structure is demonstrated using the Pd/Ti-O/sub x/Ti heterostructure hydrogen detector.

    19. Application of Analytical Heat Transfer Models of Multi-layered...

      Office of Scientific and Technical Information (OSTI)

      multi-layered cylindrical solution to simulate the temperature response of a deep geologic radioactive waste repository with multi-layered natural and engineered...

    20. Solvothermal Thin Film Deposition of Electron Blocking Layers...

      Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

      Solvothermal Thin Film Deposition of Electron Blocking Layers Home > Research > ANSER Research Highlights > Solvothermal Thin Film Deposition of Electron Blocking Layers...

    1. Spatial atomic layer deposition on flexible substrates using...

      Office of Scientific and Technical Information (OSTI)

      Spatial atomic layer deposition on flexible substrates using a modular rotating cylinder reactor Citation Details In-Document Search Title: Spatial atomic layer deposition on...

    2. Electroless Atomic Layer Deposition: A Scalable Approach to Surface...

      Office of Scientific and Technical Information (OSTI)

      Electroless Atomic Layer Deposition: A Scalable Approach to Surface Modified Metal Powders. Citation Details In-Document Search Title: Electroless Atomic Layer Deposition: A...

    3. An electroless approach to atomic layer deposition on noble metal...

      Office of Scientific and Technical Information (OSTI)

      An electroless approach to atomic layer deposition on noble metal powders. Citation Details In-Document Search Title: An electroless approach to atomic layer deposition on noble...

    4. Low cost fuel cell diffusion layer configured for optimized anode...

      Office of Scientific and Technical Information (OSTI)

      Patent: Low cost fuel cell diffusion layer configured for optimized anode water management Citation Details In-Document Search Title: Low cost fuel cell diffusion layer configured...

    5. Laser annealing of ion implanted CZ silicon for solar cell junction formation. Quarterly report No. 1

      SciTech Connect (OSTI)

      Katzeff, J. S.

      1980-07-01

      A project to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation on solar cells is described. A Q-switched Nd:Glass laser system is used operating in the 1064 (regular) and 532 (with frequency doubler) nm wavelengths. The laser output is in excess of 30 joules with a 20 to 50 ns pulse duration. Material used in this investigation is 3-inch diameter CZ silicon, P-type 0.014 inches thick, 10..cap omega..-cm resistivity, <100> orientation. Three wafer surface conditions are being evaluated in this pulse annealing investigation: chem-polished, texture etched, and flash etched. Annealing was performed with and without beam homogenization. Both modes showed excellent lattice recovery from the implant-induced damage as analyzed using Rutherford backscattering techniques. Homogenization of the beam was performed using a fused silica rod configured with a 90/sup 0/ bend. The unhomogenized annealing was performed using a plano-concave lens. Fabrication of laser annealed cells using both modes is forthcoming.

    6. Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

      SciTech Connect (OSTI)

      Andrieu, S. Bonell, F.; Hauet, T.; Montaigne, F.; Lefevre, P.; Bertran, F.

      2014-05-07

      The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe{sub 1?x}V{sub x} electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe{sub 1?X}Co{sub x}/MgO/Fe{sub 1?X}Co{sub x} (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty ?1 minority spin state towards the Fermi level.

    7. Long-term surveillance plan for the Cheney disposal site near Grand Junction, Colorado

      SciTech Connect (OSTI)

      NONE

      1997-04-01

      This long-term surveillance plan (LTSP) describes the U.S. Department of Energy`s (DOE) long-term care program for the Uranium Mill Tailings Remedial Action (UMTRA) Project Cheney disposal site. The site is in Mesa County near Grand Junction, Colorado. The U.S. Nuclear Regulatory Commission (NRC) has developed regulations for the issuance of a general license for the custody and long-term care of UMTRA Project disposal sites in 10 CFR Part 40. The purpose of this general license is to ensure that the UMTRA Project disposal sites are cared for in a manner that protects public health and safety and the environment. Before each disposal site may be licensed, the NRC requires the DOE to submit a site-specific LTSP. The DOE prepared this LTSP to meet this requirement for the Cheney disposal site. The general license becomes effective when the NRC concurs with the DOE`s determination that remedial action is complete and the NRC formally accepts this plan. This document describes the long-term surveillance program the DOE will implement to ensure that the Cheney disposal site performs as designed. The program is based on site inspections to identify potential threats to disposal cell integrity. The LTSP is based on the UMTRA Project long-term surveillance program guidance and meets the requirements of 10 CFR {section}40.27(b) and 40 CFR {section}192.03.

    8. Plasma Separation Process: Betacell (BCELL) code: User's manual. [Bipolar barrier junction

      SciTech Connect (OSTI)

      Taherzadeh, M.

      1987-11-13

      The emergence of clearly defined applications for (small or large) amounts of long-life and reliable power sources has given the design and production of betavoltaic systems a new life. Moreover, because of the availability of the plasma separation program, (PSP) at TRW, it is now possible to separate the most desirable radioisotopes for betacell power generating devices. A computer code, named BCELL, has been developed to model the betavoltaic concept by utilizing the available up-to-date source/cell parameters. In this program, attempts have been made to determine the betacell energy device maximum efficiency, degradation due to the emitting source radiation and source/cell lifetime power reduction processes. Additionally, comparison is made between the Schottky and PN junction devices for betacell battery design purposes. Certain computer code runs have been made to determine the JV distribution function and the upper limit of the betacell generated power for specified energy sources. A Ni beta emitting radioisotope was used for the energy source and certain semiconductors were used for the converter subsystem of the betacell system. Some results for a Promethium source are also given here for comparison. 16 refs.

    9. Nonlinear vs. bolometric radiation response and phonon thermal conductance in graphene-superconductor junctions

      SciTech Connect (OSTI)

      Vora, Heli; Nielsen, Bent; Du, Xu [Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York (United States)

      2014-02-21

      Graphene is a promising candidate for building fast and ultra-sensitive bolometric detectors due to its weak electron-phonon coupling and low heat capacity. In order to realize a practical graphene-based bolometer, several important issues, including the nature of radiation response, coupling efficiency to the radiation and the thermal conductance need to be carefully studied. Addressing these issues, we present graphene-superconductor junctions as a viable option to achieve efficient and sensitive bolometers, with the superconductor contacts serving as hot electron barriers. For a graphene-superconductor device with highly transparent interfaces, the resistance readout in the presence of radio frequency radiation is dominated by non-linear response. On the other hand, a graphene-superconductor tunnel device shows dominantly bolometric response to radiation. For graphene devices fabricated on SiO{sub 2} substrates, we confirm recent theoretical predictions of T{sup 2} temperature dependence of phonon thermal conductance in the presence of disorder in the graphene channel at low temperatures.

    10. The tight junction protein Z O-2 has several functional nuclear export signals

      SciTech Connect (OSTI)

      Gonzalez-Mariscal, Lorenza [Department of Physiology, Biophysics and Neuroscience, Center for Research and Advanced Studies (CINVESTAV), Ave. Instituto Politecnico Nacional 2508, Mexico, D.F., 07360 (Mexico)]. E-mail: lorenza@fisio.cinvestav.mx; Ponce, Arturo [Department of Physiology, Biophysics and Neuroscience, Center for Research and Advanced Studies (CINVESTAV), Ave. Instituto Politecnico Nacional 2508, Mexico, D.F., 07360 (Mexico); Alarcon, Lourdes [Department of Physiology, Biophysics and Neuroscience, Center for Research and Advanced Studies (CINVESTAV), Ave. Instituto Politecnico Nacional 2508, Mexico, D.F., 07360 (Mexico); Jaramillo, Blanca Estela [Department of Physiology, Biophysics and Neuroscience, Center for Research and Advanced Studies (CINVESTAV), Ave. Instituto Politecnico Nacional 2508, Mexico, D.F., 07360 (Mexico)

      2006-10-15

      The tight junction (TJ) protein ZO-2 changes its subcellular distribution according to the state of confluency of the culture. Thus in confluent monolayers, it localizes at the TJ region whereas in sparse cultures it concentrates at the nucleus. The canine sequence of ZO-2 displays four putative nuclear export signals (NES), two at the second PDZ domain (NES-0 and NES-1) and the rest at the GK region (NES-2 and NES-3). The functionality of NES-0 and NES-3 was unknown, hence here we have explored it with a nuclear export assay, injecting into the nucleus of MDCK cells peptides corresponding to the ZO-2 NES sequences chemically coupled to ovalbumin. We show that both NES-0 and NES-3 are functional and sensitive to leptomycin B. We also demonstrate that NES-1, previously characterized as a non functional NES, is rendered capable of nuclear export upon the acquisition of a negative charge at its Ser369 residue. Experiments performed injecting at the nucleus WT and mutated ZO-2-GST fusion proteins revealed the need of both NES-0 and NES-1, and NES-2 and NES-3 for attaining an efficient nuclear exit of the respective amino and middle segments of ZO-2. Moreover, the transfection of MDCK cells with full-length ZO-2 revealed that the mutation of any of the NES present in the molecule was sufficient to induce nuclear accumulation of the protein.

    11. Examination of a Junction-Box Adhesion Test for Use in Photovoltaic Module Qualification: Preprint

      SciTech Connect (OSTI)

      Miller, D. C.; Wohlgemuth, J. H.

      2012-08-01

      Engineering robust adhesion of the junction-box (j-box) is a hurdle typically encountered by photovoltaic (PV) module manufacturers during product development. There are historical incidences of adverse effects (e.g., fires) caused when the j-box/adhesive/module system has failed in the field. The addition of a weight to the j-box during the 'damp heat' IEC qualification test is proposed to verify the basic robustness of its adhesion system. The details of the proposed test will be described, in addition to the preliminary results obtained using representative materials and components. The described discovery experiments examine moisture-cured silicone, foam tape, and hot-melt adhesives used in conjunction with PET or glass module 'substrates.' To be able to interpret the results, a set of material-level characterizations was performed, including thermogravimetric analysis, differential scanning calorimetry, and dynamic mechanical analysis. PV j-boxes were adhered to a substrate, loaded with a prescribed weight, and then placed inside an environmental chamber (at 85C, 85% relative humidity). Some systems did not remain attached through the discovery experiments. Observed failure modes include delamination (at the j-box/adhesive or adhesive/substrate interface) and phase change/creep. The results are discussed in the context of the application requirements, in addition to the plan for the formal experiment supporting the proposed modification to the qualification test.

    12. Exact half-BPS string-junction solutions in six-dimensional supergravity

      E-Print Network [OSTI]

      Chiodaroli, Marco; Guo, Yu; Gutperle, Michael

      2011-01-01

      We construct SO(2,1) x SO(3)-invariant half-BPS solutions in six-dimensional (0,4) supergravity with m tensor multiplets. The space-time manifold of each one of these solutions consists of an AdS_2 x S^2 warped over a Riemann surface Sigma with boundary. The most general local solution is parametrized by one real harmonic function, and m+2 holomorphic functions which are subject to a quadratic constraint and a hermitian inequality, both of which are manifestly SO(2,m) invariant. Imposing suitable conditions on these harmonic and holomorphic functions, we construct globally regular supergravity solutions with N distinct AdS_3 x S^3 asymptotic regions and contractible Sigma. These solutions have an intricate moduli space, whose dimension equals 2(m+1)N -m-2 and matches the counting of three-form charge vectors and un-attracted scalars of the tensor multiplet. Exact explicit formulas for all supergravity fields are obtained in terms of the moduli. Our solutions give the near-horizon geometries for junctions of N...

    13. Interplay between interband coupling and ferromagnetism in iron pnictide superconductor/ferromagnet/iron pnictide superconductor junctions

      SciTech Connect (OSTI)

      Liu, S. Y.; Tao, Y. C.; Hu, J. G.

      2014-08-28

      An extended eight-component Bogoliubov-de Gennes equation is applied to study the Josephson effect between iron-based superconductors (SCs) with s{sub ±}-wave pairing symmetry, separated by an ferromagnet (FM). The feature of damped oscillations of critical Josephson current as a function of FM thickness, the split of the peaks induced by the interband coupling is much different from that for the junction with the s{sub ±}-wave SCs replaced by s{sub ++}-wave ones. In particular, a 0?? transition as a function of interband coupling strength ? is found to always exhibit with the corresponding dip shifting toward the larger ? due to enhancing the spin polarization in the FM, while there exits no 0?? transition for the SC with s{sub ++}-wave pairing symmetry. The two features can be used to identify the pairing symmetry in the iron pnictide SC different from the s{sub ++}-wave one in MgB{sub 2}. Experimentally, by adjusting the doping level in the s{sub ±}-wave SCs, one can vary ?.

    14. Cluster-formation in the Rosette molecular cloud at the junctions of filaments

      E-Print Network [OSTI]

      Schneider, N; Hennemann, M; Motte, F; Didelon, P; Federrath, C; Bontemps, S; Di Francesco, J; Arzoumanian, D; Minier, V; André, Ph; Hill, T; Zavagno, A; Nguyen-Luong, Q; Attard, M; Bernard, J -Ph; Elia, D; Fallscheer, C; Griffin, M; Kirk, J; Klessen, R; Könyves, V; Martin, P; Men'shchikov, A; Palmeirim, P; Peretto, N; Pestalozzi, M; Russeil, D; Sadavoy, S; Sousbie, T; Testi, L; Tremblin, P; Ward-Thompson, D; White, G

      2012-01-01

      For many years feedback processes generated by OB-stars in molecular clouds, including expanding ionization fronts, stellar winds, or UV-radiation, have been proposed to trigger subsequent star formation. However, hydrodynamic models including radiation and gravity show that UV-illumination has little or no impact on the global dynamical evolution of the cloud. The Rosette molecular cloud, irradiated by the NGC2244 cluster, is a template region for triggered star-formation, and we investigated its spatial and density structure by applying a curvelet analysis, a filament-tracing algorithm (DisPerSE), and probability density functions (PDFs) on Herschel column density maps, obtained within the HOBYS key program. The analysis reveals not only the filamentary structure of the cloud but also that all known infrared clusters except one lie at junctions of filaments, as predicted by turbulence simulations. The PDFs of sub-regions in the cloud show systematic differences. The two UV-exposed regions have a double-peak...

    15. Bottom head to shell junction assembly for a boiling water nuclear reactor

      DOE Patents [OSTI]

      Fife, A.B.; Ballas, G.J.

      1998-02-24

      A bottom head to shell junction assembly which, in one embodiment, includes an annular forging having an integrally formed pump deck and shroud support is described. In the one embodiment, the annular forging also includes a top, cylindrical shaped end configured to be welded to one end of the pressure vessel cylindrical shell and a bottom, conical shaped end configured to be welded to the disk shaped bottom head. Reactor internal pump nozzles also are integrally formed in the annular forging. The nozzles do not include any internal or external projections. Stubs are formed in each nozzle opening to facilitate welding a pump housing to the forging. Also, an upper portion of each nozzle opening is configured to receive a portion of a diffuser coupled to a pump shaft which extends through the nozzle opening. Diffuser openings are formed in the integral pump deck to provide additional support for the pump impellers. The diffuser opening is sized so that a pump impeller can extend at least partially therethrough. The pump impeller is connected to the pump shaft which extends through the nozzle opening. 5 figs.

    16. Bottom head to shell junction assembly for a boiling water nuclear reactor

      DOE Patents [OSTI]

      Fife, Alex Blair (San Jose, CA); Ballas, Gary J. (San Jose, CA)

      1998-01-01

      A bottom head to shell junction assembly which, in one embodiment, includes an annular forging having an integrally formed pump deck and shroud support is described. In the one embodiment, the annular forging also includes a top, cylindrical shaped end configured to be welded to one end of the pressure vessel cylindrical shell and a bottom, conical shaped end configured to be welded to the disk shaped bottom head. Reactor internal pump nozzles also are integrally formed in the annular forging. The nozzles do not include any internal or external projections. Stubs are formed in each nozzle opening to facilitate welding a pump housing to the forging. Also, an upper portion of each nozzle opening is configured to receive a portion of a diffuser coupled to a pump shaft which extends through the nozzle opening. Diffuser openings are formed in the integral pump deck to provide additional support for the pump impellers. The diffuser opening is sized so that a pump impeller can extend at least partially therethrough. The pump impeller is connected to the pump shaft which extends through the nozzle opening.

    17. Trial Run of a Junction-Box Attachment Test for Use in Photovoltaic Module Qualification (Presentation)

      SciTech Connect (OSTI)

      Miller, D.; Deibert, S.; Wohlgemuth, J.

      2014-06-01

      Engineering robust adhesion of the junction-box (j-box) is a hurdle typically encountered by photovoltaic (PV) module manufacturers during product development and manufacturing process control. There are historical incidences of adverse effects (e.g., fires), caused when the j-box/adhesive/module system has failed in the field. The addition of a weight to the j-box during the 'damp-heat', 'thermal-cycle', or 'creep' tests within the IEC qualification protocol is proposed to verify the basic robustness of the adhesion system. The details of the proposed test are described, in addition to a trial run of the test procedure. The described experiments examine 4 moisture-cured silicones, 4 foam tapes, and a hot-melt adhesive used in conjunction with glass, KPE, THV, and TPE substrates. For the purpose of validating the experiment, j-boxes were adhered to a substrate, loaded with a prescribed weight, and then subjected to aging. The replicate mock-modules were aged in an environmental chamber (at 85 deg C/85% relative humidity for 1000 hours; then 100 degrees C/<10% relative humidity for 200 hours) or fielded in Golden, Miami, and Phoenix for 1 year. Attachment strength tests, including pluck and shear test geometries, were also performed on smaller component specimens.

    18. Experimental verification of the Acuros XB and AAA dose calculation adjacent to heterogeneous media for IMRT and RapidArc of nasopharygeal carcinoma

      SciTech Connect (OSTI)

      Kan, Monica W. K. [Department of Oncology, Princess Margaret Hospital, Kwai Chung, Hong Kong Special Administrative Region and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong Special Administrative Region (Hong Kong); Leung, Lucullus H. T.; So, Ronald W. K. [Department of Oncology, Princess Margaret Hospital, Kwai Chung, Hong Kong Special Administrative Region (Hong Kong); Yu, Peter K. N. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong Special Administrative Region (Hong Kong)

      2013-03-15

      Purpose: To compare the doses calculated by the Acuros XB (AXB) algorithm and analytical anisotropic algorithm (AAA) with experimentally measured data adjacent to and within heterogeneous medium using intensity modulated radiation therapy (IMRT) and RapidArc{sup Registered-Sign} (RA) volumetric arc therapy plans for nasopharygeal carcinoma (NPC). Methods: Two-dimensional dose distribution immediately adjacent to both air and bone inserts of a rectangular tissue equivalent phantom irradiated using IMRT and RA plans for NPC cases were measured with GafChromic{sup Registered-Sign} EBT3 films. Doses near and within the nasopharygeal (NP) region of an anthropomorphic phantom containing heterogeneous medium were also measured with thermoluminescent dosimeters (TLD) and EBT3 films. The measured data were then compared with the data calculated by AAA and AXB. For AXB, dose calculations were performed using both dose-to-medium (AXB{sub Dm}) and dose-to-water (AXB{sub Dw}) options. Furthermore, target dose differences between AAA and AXB were analyzed for the corresponding real patients. The comparison of real patient plans was performed by stratifying the targets into components of different densities, including tissue, bone, and air. Results: For the verification of planar dose distribution adjacent to air and bone using the rectangular phantom, the percentages of pixels that passed the gamma analysis with the {+-} 3%/3mm criteria were 98.7%, 99.5%, and 97.7% on the axial plane for AAA, AXB{sub Dm}, and AXB{sub Dw}, respectively, averaged over all IMRT and RA plans, while they were 97.6%, 98.2%, and 97.7%, respectively, on the coronal plane. For the verification of planar dose distribution within the NP region of the anthropomorphic phantom, the percentages of pixels that passed the gamma analysis with the {+-} 3%/3mm criteria were 95.1%, 91.3%, and 99.0% for AAA, AXB{sub Dm}, and AXB{sub Dw}, respectively, averaged over all IMRT and RA plans. Within the NP region where air and bone were present, the film measurements represented the dose close to unit density water in a heterogeneous medium, produced the best agreement with the AXB{sub Dw}. For the verification of point doses within the target using TLD in the anthropomorphic phantom, the absolute percentage deviations between the calculated and measured data when averaged over all IMRT and RA plans were 1.8%, 1.7%, and 1.8% for AAA, AXB{sub Dm} and AXB{sub Dw}, respectively. From all the verification results, no significant difference was found between the IMRT and RA plans. The target dose analysis of the real patient plans showed that the discrepancies in mean doses to the PTV component in tissue among the three dose calculation options were within 2%, but up to about 4% in the bone content, with AXB{sub Dm} giving the lowest values and AXB{sub Dw} giving the highest values. Conclusions: In general, the verification measurements demonstrated that both algorithms produced acceptable accuracy when compared to the measured data. GafChromic{sup Registered-Sign} film results indicated that AXB produced slightly better accuracy compared to AAA for dose calculation adjacent to and within the heterogeneous media. Users should be aware of the differences in calculated target doses between options AXB{sub Dm} and AXB{sub Dw}, especially in bone, for IMRT and RA in NPC cases.

    19. Percutaneous Radiofrequency Ablation of Painful Spinal Tumors Adjacent to the Spinal Cord with Real-Time Monitoring of Spinal Canal Temperature: A Prospective Study

      SciTech Connect (OSTI)

      Nakatsuka, Atsuhiro, E-mail: nakatuka@clin.medic.mie-u.ac.jp; Yamakado, Koichiro; Takaki, Haruyuki; Uraki, Junji; Makita, Masashi; Oshima, Fumiyoshi; Takeda, Kan [Mie University School of Medicine, Department of Radiology (Japan)

      2009-01-15

      PurposeTo prospectively evaluate the feasibility, safety, and clinical utility of bone radiofrequency (RF) ablation with real-time monitoring of the spinal canal temperature for the treatment of spinal tumors adjacent to the spinal cord.Materials and MethodsOur Institutional Review Board approved this study. Patients gave informed consent. The inclusion criteria were (a) a painful spinal metastasis and (b) a distance of 1 cm or less between the metastasis and the spinal cord. The thermocouple was placed in the spinal canal under CT fluoroscopic guidance. When the spinal canal temperature reached 45{sup o}C, RF application was immediately stopped. RF ablation was considered technically successful when the procedure was performed without major complications. Clinical success was defined as a fall in the visual analogue scale score of at least 2 points.ResultsTen patients with spinal tumors measuring 3-8 cm (mean, 4.9 {+-} 1.5 cm) were enrolled. The distance between the tumor and the spinal cord was 1-6 mm (mean, 2.4 {+-} 1.6 mm). All procedures were judged technically successful (100%). The spinal canal temperature did not exceed 45{sup o}C in 9 of the 10 patients (90%). In the remaining patient, the temperature rose to 48{sup o}C, resulting in transient neural damage, although RF application was immediately stopped when the temperature reached 45{sup o}C. Clinical success was achieved within 1 week in all patients (100%).ConclusionBone RF ablation with real-time monitoring of the spinal canal temperature is feasible, safe, and clinically useful for the treatment of painful spinal metastases adjacent to the spinal cord.

    20. A water-processable organic electron-selective layer for solution-processed inverted organic solar cells

      SciTech Connect (OSTI)

      Chen, Dongcheng; Zhou, Hu; Cai, Ping; Sun, Shi; Ye, Hua; Su, Shi-Jian Cao, Yong

      2014-02-03

      A triazine- and pyridinium-containing water-soluble material of 1,1?,1?-(4,4?,4?-(1,3,5-triazine-2,4,6-triyl)tris(benzene-4,1-diyl)) tris(methylene)tripyridinium bromide (TzPyBr) was developed as an organic electron-selective layer in solution-processed inverted organic solar cells due to its strong anti-erosion capacity against non-polar organic solvents commonly used for the active layer. Ohmic-like contact with the adjacent active materials like fullerene derivatives is speculated to be formed, as confirmed by the work-function measurements with scanning Kelvin probe and ultraviolet photoelectron spectroscopy techniques. Besides, considering the deep highest occupied molecular orbital energy level of TzPyBr, excellent hole-blocking property of the electron-selective layer is also anticipated. The inverted organic photovoltaic devices based on the TzPyBr/ITO (indium tin oxide) bilayer cathode exhibit dramatically enhanced performance compared to the control devices with bare ITO as the cathode and even higher efficiency than the conventional type devices with ITO and Al as the electrodes.