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1

Energy Department Authorizes Additional Volume at Proposed Freeport...  

Office of Environmental Management (EM)

Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export...

2

Dow Freeport PMDI MRU Optimization  

E-Print Network [OSTI]

1 Dow Freeport PMDI MRU Optimization John Litzinger Sr. Improvement Specialist May 20, 2010 2 ? Largest diversified chemical company ? Founded in Midland, Michigan in 1897 ? Supplies more than 5,000 products to customers in 160 countries... Chairman, CEO & President The Dow Chemical Company Corporate Commitment to 2015 Goals Liveris Launches 2015 Sustainability Goals Corporate Commitment & Acountability 6 Dow Polyurethane PMDI ? PMDI (Polymeric Methylene Di-Phenyl Di-Isocyanate) is a...

Litzinger, J.

3

SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTI...  

Broader source: Energy.gov (indexed) [DOE]

FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 11-161-LNG - ORDER 3357 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE...

4

SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION...  

Broader source: Energy.gov (indexed) [DOE]

- FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-161-LNG - ORDER 3282 SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT....

5

ISLANDER  

Energy Science and Technology Software Center (OSTI)

003251WKSTN00 Genomic Island Identification Software v 1.0  http://bioinformatics.sandia.gov/software 

6

EIS-0487: Freeport LNG Liquefaction Project, Brazoria County, Texas  

Broader source: Energy.gov [DOE]

Federal Energy Regulatory Commission (FERC) prepared an EIS to analyze the potential environmental impacts of a proposal to construct and operate the Freeport Liquefied Natural Gas (LNG) Liquefaction Project, which would expand an existing LNG import terminal and associated facilities in Brazoria County, Texas, to enable the terminal to liquefy and export LNG. DOE, Office of Fossil Energy – a cooperating agency in preparing the EIS – has an obligation under Section 3 of the Natural Gas Act to authorize the import and export of natural gas, including LNG, unless it finds that the import or export is not consistent with the public interest.

7

Energy Department Authorizes Freeport LNG to Export Liquefied Natural Gas |  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in Review: TopEnergyIDIQBusiness Competition | DepartmentDepartment of Energy Freeport

8

Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefactio...  

Broader source: Energy.gov (indexed) [DOE]

Application of Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC to Transfer Control of Long-term Authorization to Export...

9

Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

1-161-LNG Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE Dkt. No. 11-161-LNG On November 15, 2013, the Office of Fossil Energy of the Department of Energy (DOEFE)...

10

SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTIO...  

Broader source: Energy.gov (indexed) [DOE]

EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-160-LNG - ORDER 2913 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-160-LNG - ORDER...

11

Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

0-161-LNG Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE Dkt. No. 10-161-LNG On May 17, 2013, the Office of Fossil Energy of the Department of Energy (DOEFE) issued...

12

DEVELOPMENT OF A 3D GRID, FRACTURE AND PROPERTY MODELS FOR THE UPPER FREEPORT COAL AND OVERBURDEN USING 3D  

E-Print Network [OSTI]

in unminable coal seams. The pilot test is being conducted by CONSOL Energy Inc. Several site characterization of the Upper Freeport coal seam in southeastern Marshall Co. The site lies within a1km2 area that is outlined dimension. Grid cell thickness in the Pittsburgh and Upper Freeport coal seams was set at 8 feet and 5 feet

Wilson, Thomas H.

13

Freeport-McMoRan Copper & Gold Foundation Scholarship 2013/2014 www.fcx.com Page 1 of 4 Revised 1/22/13  

E-Print Network [OSTI]

Freeport-McMoRan Copper & Gold Foundation Scholarship ­ 2013/2014 www.fcx.com Page 1 of 4 Revised 1/22/13 Freeport-McMoRan Copper & Gold Inc. (FCX) is a leading international mining company with headquarters and probable reserves of copper, gold and molybdenum. FCX is the world's largest publicly traded copper

Tipple, Brett

14

Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE Dkt. No.  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of Energy Power.pdf11-161-LNG | Department of Energy Freeport LNG Expansion, L.P. and FLNG Liquefaction,

15

Results of the radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania (ANK001)  

SciTech Connect (OSTI)

At the request of the US Department of Energy (DOE), a team from Oak Ridge National Laboratory conducted a radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania. The survey was performed on November 12, 1991. The purpose of the survey was to determine whether the property was contaminated with radioactive residues, principally [sup 238]U, as a result of work done for the Manhattan Engineer District in 1944. The survey included measurement of direct alpha and beta-gamma levels in the northeast comer of the basement of Building 29, and the collection of a debris sample from a floor drain for radionuclide analysis. The survey area was used for experimental canning of uranium slugs prior to production activities at the former New Kensington Works nearby.

Foley, R.D.; Brown, K.S.

1992-10-01T23:59:59.000Z

16

ambrym island vanuatu: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

subpicosecond carrier dynamics C. Kadowa) Materials; accepted for publication 5 October 1999 We report the growth of self-assembled ErAs islands embedded in GaAs by molecular beam...

17

anticosti island laurentia: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

subpicosecond carrier dynamics C. Kadowa) Materials; accepted for publication 5 October 1999 We report the growth of self-assembled ErAs islands embedded in GaAs by molecular beam...

18

aegna island tallinn: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

subpicosecond carrier dynamics C. Kadowa) Materials; accepted for publication 5 October 1999 We report the growth of self-assembled ErAs islands embedded in GaAs by molecular beam...

19

Results of the radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania (ANK001). Environmental Restoration and Waste Management Non-Defense Programs  

SciTech Connect (OSTI)

At the request of the US Department of Energy (DOE), a team from Oak Ridge National Laboratory conducted a radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania. The survey was performed on November 12, 1991. The purpose of the survey was to determine whether the property was contaminated with radioactive residues, principally {sup 238}U, as a result of work done for the Manhattan Engineer District in 1944. The survey included measurement of direct alpha and beta-gamma levels in the northeast comer of the basement of Building 29, and the collection of a debris sample from a floor drain for radionuclide analysis. The survey area was used for experimental canning of uranium slugs prior to production activities at the former New Kensington Works nearby.

Foley, R.D.; Brown, K.S.

1992-10-01T23:59:59.000Z

20

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer  

SciTech Connect (OSTI)

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

Vajargah, S. Hosseini; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada) [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)] [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada) [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2013-09-21T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Island Energy Snapshots  

Office of Energy Efficiency and Renewable Energy (EERE)

These energy snapshots highlight the energy landscape of islands in the Caribbean and the surrounding area.

22

aphae island shinan-gun: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

subpicosecond carrier dynamics C. Kadowa) Materials; accepted for publication 5 October 1999 We report the growth of self-assembled ErAs islands embedded in GaAs by molecular beam...

23

aphaedo island shinan-gun: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

subpicosecond carrier dynamics C. Kadowa) Materials; accepted for publication 5 October 1999 We report the growth of self-assembled ErAs islands embedded in GaAs by molecular beam...

24

Arctic ice islands  

SciTech Connect (OSTI)

The development of offshore oil and gas resources in the Arctic waters of Alaska requires offshore structures which successfully resist the lateral forces due to moving, drifting ice. Ice islands are floating, a tabular icebergs, up to 60 meters thick, of solid ice throughout their thickness. The ice islands are thus regarded as the strongest ice features in the Arctic; fixed offshore structures which can directly withstand the impact of ice islands are possible but in some locations may be so expensive as to make oilfield development uneconomic. The resolution of the ice island problem requires two research steps: (1) calculation of the probability of interaction between an ice island and an offshore structure in a given region; and (2) if the probability if sufficiently large, then the study of possible interactions between ice island and structure, to discover mitigative measures to deal with the moving ice island. The ice island research conducted during the 1983-1988 interval, which is summarized in this report, was concerned with the first step. Monte Carlo simulations of ice island generation and movement suggest that ice island lifetimes range from 0 to 70 years, and that 85% of the lifetimes are less then 35 years. The simulation shows a mean value of 18 ice islands present at any time in the Arctic Ocean, with a 90% probability of less than 30 ice islands. At this time, approximately 34 ice islands are known, from observations, to exist in the Arctic Ocean, not including the 10-meter thick class of ice islands. Return interval plots from the simulation show that coastal zones of the Beaufort and Chukchi Seas, already leased for oil development, have ice island recurrences of 10 to 100 years. This implies that the ice island hazard must be considered thoroughly, and appropriate safety measures adopted, when offshore oil production plans are formulated for the Alaskan Arctic offshore. 132 refs., 161 figs., 17 tabs.

Sackinger, W.M.; Jeffries, M.O.; Lu, M.C.; Li, F.C.

1988-01-01T23:59:59.000Z

25

Conservation Strategy for Sable Island  

E-Print Network [OSTI]

Towards a Conservation Strategy for Sable Island Environment Canada, Canadian Wildlife Service, Atlantic Region #12;SABLE ISLAND CONSERVATION STRATEGY page - i March, 1998 A CONSERVATION STRATEGY FOR SABLE ISLAND PREPARED BY This Conservation Strategy for Sable Island was prepared for Environment Canada

Jones, Ian L.

26

Interconnection Guidelines (Rhode Island)  

Broader source: Energy.gov [DOE]

Rhode Island enacted legislation (HB 6222) in June 2011 to standardize the application process for the interconnection of customer-sited renewable-energy systems to the state’s distribution grid....

27

Forestry Policies (Rhode Island)  

Broader source: Energy.gov [DOE]

Rhode Island's forests cover over half of the state's land area, and are managed by the Department of Environmental Management, Division of Forest Environment. The State issued its "Forest...

28

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.

Chen, Z. B.; Chen, B.; Wang, Y. B.; Liao, X. Z., E-mail: xiaozhou.liao@sydney.edu.au [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Lei, W. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth, WA 6009 (Australia); Tan, H. H.; Jagadish, C. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Zou, J. [Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072 (Australia); Ringer, S. P. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006 (Australia)

2014-01-13T23:59:59.000Z

29

Long Island Solar Farm  

SciTech Connect (OSTI)

The Long Island Solar Farm (LISF) is a remarkable success story, whereby very different interest groups found a way to capitalize on unusual circumstances to develop a mutually beneficial source of renewable energy. The uniqueness of the circumstances that were necessary to develop the Long Island Solar Farm make it very difficult to replicate. The project is, however, an unparalleled resource for solar energy research, which will greatly inform large-scale PV solar development in the East. Lastly, the LISF is a superb model for the process by which the project developed and the innovation and leadership shown by the different players.

Anders, R.

2013-05-01T23:59:59.000Z

30

GREEN HOMES LONG ISLAND  

E-Print Network [OSTI]

energy bill, reduce your carbon footprint... at little or no cost to you. #12;A Message From Supervisor energy-efficient and reduce our community's carbon footprint. Why do we call it Long Island Green Homes to yourevery day. By making basic improvements to yourevery day home, you can reduce your carbon footprint

Kammen, Daniel M.

31

GA-AL-SC | Department of Energy  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of Energy Power.pdf11-161-LNG | Department of Energy Freeport LNGEnergy Research |G-8 Energy

32

Culturing revolution : the local Communists of China's Hainan Island  

E-Print Network [OSTI]

One: Deserted Treasure Island……………………………………………….13 ChapterChapter One Deserted Treasure Island: The Social Ecology andIsolated Island/Treasure Island – Gudao / Baodao Social and

Murray, Jeremy Andrew

2011-01-01T23:59:59.000Z

33

Rhode Island Stormwater Design and Installation Standards Manual (Rhode Island)  

Broader source: Energy.gov [DOE]

Rhode Island's stormwater design and installation standards manual has been developed to describe mandatory and suggested stormwater design and performance criteria for applicants to the Department...

34

MHTGR-Nuclear Island Engineering: Final summary report for the period November 30, 1987 through December 1, 1988  

SciTech Connect (OSTI)

This report summarizes the Modular High-Temperature Gas-Cooled Reactor (MHTGR) - Nuclear Island Engineering (NIE) design and development work performed by General Atomics (GA) for the period November 30, 1987 through December 1, 1988, under the Department of Energy (DOE) Contract AC03-88SF17367. The scope of the report includes work performed by Bechtel National Inc. (BNI), Combustion Engineering Inc. (C-E), and James Howden Company, as major subcontractors to GA.

NONE

1988-12-01T23:59:59.000Z

35

Minnesota Nuclear Profile - Prairie Island  

U.S. Energy Information Administration (EIA) Indexed Site

Prairie Island" "Unit","Summer capacity (mw)","Net generation (thousand mwh)","Summer capacity factor (percent)","Type","Commercial operation date","License expiration date"...

36

WIND DATA REPORT Thompson Island  

E-Print Network [OSTI]

WIND DATA REPORT Thompson Island June 1, 2003 ­ August 31, 2003 Prepared for Massachusetts...................................................................................................................... 9 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distribution

Massachusetts at Amherst, University of

37

WIND DATA REPORT Thompson Island  

E-Print Network [OSTI]

WIND DATA REPORT Thompson Island March 1, 2003 ­ May 31, 2003 Prepared for Massachusetts Technology...................................................................................................................... 9 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distributions

Massachusetts at Amherst, University of

38

WIND DATA REPORT Thompson Island  

E-Print Network [OSTI]

WIND DATA REPORT Thompson Island June 1, 2004 ­ August 31, 2004 Prepared for Massachusetts...................................................................................................................... 9 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distribution

Massachusetts at Amherst, University of

39

WIND DATA REPORT Thompson Island  

E-Print Network [OSTI]

WIND DATA REPORT Thompson Island December 1, 2003 ­ February 29, 2004 Prepared for Massachusetts.................................................................................................................... 11 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distribution

Massachusetts at Amherst, University of

40

WIND DATA REPORT Thompson Island  

E-Print Network [OSTI]

WIND DATA REPORT Thompson Island March 1, 2004 ­ May 31, 2004 Prepared for Massachusetts Technology...................................................................................................................... 9 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distribution

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

WIND DATA REPORT Thompson Island  

E-Print Network [OSTI]

WIND DATA REPORT Thompson Island September 1, 2003 ­ November 30, 2003 Prepared for Massachusetts...................................................................................................................... 9 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distribution

Massachusetts at Amherst, University of

42

Galveston Island and erosion  

E-Print Network [OSTI]

. VITA 73 74 80 85 97 101 115 LIST OF TABLES Table Page 1. Ai rphoto Scale Determination with the Aid of a Base Map . . 16 2. Actual-vs-l4easured Photo Scale and Resulting Error 3. Tropical Cyclones Affecting the Texas Coast from 1952-1983... 17 64 4. Projected Sea-level Rise 72 5. Potential Sand Sources and Sinks for Galveston Island . . . . 80 Al. Vegetation-line Changes on West Beach from July 3, 1977 to September 22, 1983; Impact of Recent Storm Events AZ. Changes...

Bolleter, Jim Mason

1985-01-01T23:59:59.000Z

43

Islands in the landscape  

E-Print Network [OSTI]

The string theory landscape consists of many metastable de Sitter vacua, populated by eternal inflation. Tunneling between these vacua gives rise to a dynamical system, which asymptotically settles down to an equilibrium state. We investigate the effects of sinks to anti-de Sitter space, and show how their existence can change probabilities in the landscape. Sinks can disturb the thermal occupation numbers that would otherwise exist in the landscape and may cause regions that were previously in thermal contact to be divided into separate, thermally isolated islands.

T. Clifton; Andrei Linde; Navin Sivanandam

2007-01-10T23:59:59.000Z

44

Nauru Island Effect Study  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNational Library of1, 2007 (nextNauru Island Effect Study S. A.

45

Ga nanoparticle-enhanced photoluminescence of GaAs  

SciTech Connect (OSTI)

We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-09-02T23:59:59.000Z

46

Thematic Review Conservation of Biodiversity on Islands  

E-Print Network [OSTI]

Thematic Review Conservation of Biodiversity on Islands: The contribution of the United Kingdom............................................................................................. 11 3. THE BIODIVERSITY OF ISLANDS INVOLVED WITH DI PROJECTS ........................................................................................... 49 6. THE DARWIN INITIATIVE'S CONTRIBUTION TO THE CBD'S ISLAND BIODIVERSITY PROGRAMME OF WORK

47

Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots  

SciTech Connect (OSTI)

We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

Huang, S.; Kim, S. J.; Pan, X. Q. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Goldman, R. S., E-mail: rsgold@umich.edu [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-07-21T23:59:59.000Z

48

Small-Scale Solar Grants (Rhode Island)  

Broader source: Energy.gov [DOE]

The Rhode Island Economic Development Corporation (RIEDC) provides incentives for renewable-energy projects. Incentive programs are funded by the Rhode Island Renewable Energy Fund (RIREF) and...

49

Energy Transition Initiative: Islands Playbook (Book) | OSTI...  

Office of Scientific and Technical Information (OSTI)

Energy Transition Initiative: Islands Playbook (Book) Re-direct Destination: The Island Energy Playbook (the Playbook) provides an action-oriented guide to successfully initiating,...

50

AlGaN/GaN-based power semiconductor switches  

E-Print Network [OSTI]

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

51

EIS-0006: Wind Turbine Generator System, Block Island, Rhode Island  

Broader source: Energy.gov [DOE]

The U.S. Department of Energy prepared this EIS to evaluate the environmental impacts of installing and operating a large experimental wind turbine, designated the MOD-OA, which is proposed to be installed on a knoll in Rhode Island's New Meadow Hill Swamp, integrated with the adjacent Block Island Power Company power plant and operated to supply electricity to the existing utility network.

52

Long Island Solar Farm Project Overview  

E-Print Network [OSTI]

Long Island Solar Farm #12;Project Overview The Long Island Solar Farm (LISF) is a 32-megawatt. Project Developer/Owner/Operator: Long Island Solar Farm, LLC (BP Solar & MetLife) Purchaser of Power and construct arrays ~ 2 years of output (88,000 MWh equivalent) Long Island Solar Farm #12;Other Pollutants

Ohta, Shigemi

53

Island Political Economy Geoff Bertram & Bernard Poirine  

E-Print Network [OSTI]

323 Chapter 10 Island Political Economy Geoff Bertram & Bernard Poirine Introduction In this chapter we build on the observation that island economies, and especially small ones (population below one of development strategies. Common elements of "islandness" may serve to define island economies as a general

Paris-Sud XI, Université de

54

Climate Action Plan (Rhode Island)  

Broader source: Energy.gov [DOE]

In the fall of 2001, the Department of Environmental Management (DEM), the RI State Energy Office (SEO), and the Governor's office convened the Rhode Island Greenhouse Gas Stakeholder Project in...

55

Pacific Islands Region News Release  

E-Print Network [OSTI]

Pacific Islands Region News Release Contact: Wende Goo FOR IMMEDIATE RELEASE 808-721-4098 May 27 of these unique twins by contributing more than 100 hours of work to construct a holding pen for the young seal

56

Island Cosmology in the Landscape  

E-Print Network [OSTI]

In the eternally inflationary background driven by the metastable vacua of the landscape, it is possible that some local quantum fluctuations with the null energy condition violation can be large enough to stride over the barriers among different vacua, so that create some islands full of radiation in new vacua, and then these emergently thermalized islands will enter into the evolution of standard big bang cosmology. In this paper, we calculate the spectrum of curvature perturbation generated during the emergence of island. We find that generally the spectrum obtained is nearly scale invariant, which can be well related to that of slow roll inflation by a simple duality. This in some sense suggests a degeneracy between their scalar spectra. In addition, we also simply estimate the non-Gaussianity of perturbation, which is naturally large, yet, can lie well in the observational bound. The results shown here indicate that the island emergently thermalized in the landscape can be consistent with our observable universe.

Yun-Song Piao

2008-06-11T23:59:59.000Z

57

The Long Island Solar Farm  

Broader source: Energy.gov [DOE]

In November 2011, a utility-scale solar array became operational in the most unlikely of places: at Brookhaven National Laboratory on densely populated Long Island, New York. Now the largest...

58

Chikurachki volcano (Kurile Islands, Russia)  

E-Print Network [OSTI]

Chikurachki volcano (Kurile Islands, Russia) the unique volcano with frequent basaltic plinian-Kamchatsky, Russia #12;#12;Historical eruptions of Chikurachki Year 1853-59 1958 1961 1964 1973 1986 2002 Column

Belousov, Alexander

59

Site response at Treasure and Yerba Buena Islands, California  

E-Print Network [OSTI]

array at the Treasure Island Naval Station. ’’ Loma Prietadamage in Oakland, Treasure Island, and San Francisco. ’’C. H. ?1969?. ‘‘Treasure Island ?ll. ’’ Bay mud developments

Baise, L G; Glaser, Steven D; Dreger, D

2003-01-01T23:59:59.000Z

60

Cyclohexanone 1 Steam Optimization, Freeport Texas  

E-Print Network [OSTI]

Question temperature setpoints optimize supply/return delta T Temperature setback during unoccupied hours Thermal Energy Storage Question humidity setpoints Increase chilled water setpoint Shut systems off during non-production Investigate Free Cooling... Compressed Air Operate minimum number of compressors Cool air intake Reduce system pressure Use a booster compressor for small, high pressure needs Eliminate air leakage Install central compressor controls system Repair air/water separators Recover heat...

Morales, J. R.

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

FREEPORT HARBOR, TEXAS CHANNEL IMPROVEMENT PROJECT  

E-Print Network [OSTI]

the Gulf of Mexico; a main channel 45 feet deep and 400 feet wide; a Brazos Harbor channel 36 feet deep-loaded to traverse the waterway. The current channel depth requires that large crude carriers remain offshore and transfer their cargo into smaller crude tankers for the remainder of the voyage. This lightering operation

US Army Corps of Engineers

62

FREEPORT HARBOR, TEXAS CHANNEL IMPROVEMENT PROJECT  

E-Print Network [OSTI]

the Gulf of Mexico; a main channel 45 feet deep and 400 feet wide; a Brazos Harbor channel 36 feet deep requires that large crude carriers remain offshore and transfer their cargo into smaller crude tankers for the remainder of the voyage. This lightering operation takes place in the Gulf of Mexico where the two ships

US Army Corps of Engineers

63

EA-380 Freeport Commodities | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in Review: TopEnergy DOEDealingVehicle1 Closing American Electric0-A2 GDF Suez Energy36780

64

Freeport, Maine: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation, search Equivalent URI DBpediaFredonia, Arizona:Freeland, Michigan:

65

Freeport, Texas: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation, search Equivalent URI DBpediaFredonia, Arizona:Freeland,

66

Investigation of the GaN-on-GaAs interface for vertical power device applications  

SciTech Connect (OSTI)

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07T23:59:59.000Z

67

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

68

Evolution Of Surface Topography On GaAs(100) And GaAs(111) At Normal And Oblique Incidence Of Ar{sup +}-Ions  

SciTech Connect (OSTI)

Nanoscale surface structures emerging from medium energy (50-60 keV)Ar{sup +}-ion sputtering of p-type GaAs(100) and semi-insulating GaAs(111) substrates have been investigated. For normally incident 50 keV Ar{sup +}-ions of fluence 1x10{sup 17} ions/cm{sup 2} on GaAs(100) and GaAs(111) features in the form of nanoscale pits/holes without short range ordering are observed with densities 5.2x10{sup 9} /cm{sup 2} and 5.9x10{sup 9} /cm{sup 2}, respectively along with irregularly shaped patches of islands. For GaAs(111) on increasing the influence to 5x10{sup 17} /cm{sup 2} the pit density increases marginally to 6.2x10{sup 9} /cm{sup 2}. For 60 deg. off-normal incidence of 60 keV Ar.{sup +}-ions of fluence 2x10{sup 17} ions/cm{sup 2} on GaAs(100) microscale wavelike surface topography is observed. In all cases well-defined nanodots are absent on the surface.

Venugopal, V.; Basu, T.; Garg, S.; Majumder, S.; Sarangi, S. N.; Som, T. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India); Das, P.; Bhattacharyya, S. R.; Chini, T. K. [Surface Physics Division, Saha Institute of Nuclear Physics, Kolkata 700 064 (India)

2010-10-04T23:59:59.000Z

69

REAP Islanded Grid Wind Power Conference  

Broader source: Energy.gov [DOE]

Hosted by Renewable Energy Alaska Project, this three-day conference will show attendees how to learn, network, and share information on wind systems in island and islanded grid environments through expert panel discussions, stakeholder dialogue, and training.

70

Rhode Island Renewable Energy Fund (RIREF)  

Broader source: Energy.gov [DOE]

Rhode Island's Public Utilities Restructuring Act of 1996 created the nation's first public benefits fund (PBF) for renewable energy and demand-side management (DSM). The Rhode Island Renewable...

71

Coastal mesoscale changes on Matagorda Island  

E-Print Network [OSTI]

on the coastal geomorphology of Matagorda Island. Based on the statistical and morphometric analysis of the coastal landforms, the island was divided into three distinct sub-environments: an erosional eastern zone, a transitional mixed zone, and a depositional...

Lariscy, Kevin William

2001-01-01T23:59:59.000Z

72

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets  

SciTech Connect (OSTI)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

2013-08-19T23:59:59.000Z

73

Southern California Channel Islands Bibliography, through 1992  

E-Print Network [OSTI]

pollution San Nicolas Island Atmospheric Sciences/Meteorology/Nuclear Science/Radioactivity/Atmospheric Sciences/Radioactivity/Radioactive Wastes/pollution/

Channel Islands National Marine Sanctuary

1992-01-01T23:59:59.000Z

74

Islands and Our Renewable Energy Future (Presentation)  

SciTech Connect (OSTI)

Only US Laboratory Dedicated Solely to Energy Efficiency and Renewable Energy. High Contribution Renewables in Islanded Power Systems.

Baring-Gould, I.; Gevorgian, V.; Kelley, K.; Conrad, M.

2012-05-01T23:59:59.000Z

75

Mass Wasting in the Western Galapagos Islands  

E-Print Network [OSTI]

the Hawaiian Islands, the western Galapagos Islands appear to be characterized by small slump sheets existing along the steep shallow submarine flanks of the island and by debris flows that are flanked by rift zones and extend off the platform. This study...

Hall, Hillary

2012-10-19T23:59:59.000Z

76

Close Encounters Treasure Island: Sequencing Moorea  

E-Print Network [OSTI]

Close Encounters Also... Treasure Island: Sequencing Moorea Devon Zagory on Food Safety College Features 12 CLOSE ENCOUNTERS by Claire Cain Miller Passing earth science to the next generation 20 TREASURE ISLAND by Erika Check Barcoding CNR's island research station Departments 2 L

Wildermuth, Mary C

77

National Park Service- San Miguel Island, California  

Broader source: Energy.gov [DOE]

San Miguel Island is one of five islands that make up Channel Islands National Park on the coast of southern California. The islands comprise 249,353 acres (100,910 hectares) of land and ocean that teems with terrestrial and marine life. The National Park Service (NPS) protects the pristine resources at Channel Islands National Park by conserving, recycling, using alternative fuel vehicles, applying renewable energy, and using resources wisely. It also seeks to replace conventional fuels with renewable energy wherever possible. This applies especially to diesel fuel and petroleum, which must be shipped in from the mainland to generate electricity.

78

Magnetic island evolution in hot ion plasmas  

SciTech Connect (OSTI)

Effects of finite ion temperature on magnetic island evolution are studied by means of numerical simulations of a reduced set of two-fluid equations which include ion as well as electron diamagnetism in slab geometry. The polarization current is found to be almost an order of magnitude larger in hot than in cold ion plasmas, due to the strong shear of ion velocity around the separatrix of the magnetic islands. As a function of the island width, the propagation speed decreases from the electron drift velocity (for islands thinner than the Larmor radius) to values close to the guiding-center velocity (for islands of order 10 times the Larmor radius). In the latter regime, the polarization current is destabilizing (i.e., it drives magnetic island growth). This is in contrast to cold ion plasmas, where the polarization current is generally found to have a healing effect on freely propagating magnetic island.

Ishizawa, A.; Nakajima, N. [National Institute for Fusion Science, Toki 509-5292 (Japan); Waelbroeck, F. L.; Fitzpatrick, R.; Horton, W. [Institute for Fusion Studies, University of Texas at Austin, Austin, Texas 78712 (United States)

2012-07-15T23:59:59.000Z

79

Floating Cities, Islands and States  

E-Print Network [OSTI]

Many small countries are in need of additional territory. They build landfills and expensive artificial islands. The ocean covers 71 per cent of the Earth surface. Those countries (or persons of wealth) starting the early colonization of the ocean may obtain advantages through additional territory or creating their own independent state. An old idea is building a big ship. The best solution to this problem, however, is the provision of floating cities, islands, and states. The author idea is to use for floating cities, islands, and states a cheap floating platform created from a natural ice field taken from the Arctic or Antarctic oceans. These cheap platforms protected by air-film (bottom and sides) and a conventional insulating cover (top) and having a cooling system can exist for an unlimited time. They can be increased in number or size at any time, float in warm oceans, travel to different continents and countries, serve as artificial airports, harbors and other marine improvements, as well as floating c...

Bolonkin, Alexander

2008-01-01T23:59:59.000Z

80

Pathogenicity island mobility and gene content.  

SciTech Connect (OSTI)

Key goals towards national biosecurity include methods for analyzing pathogens, predicting their emergence, and developing countermeasures. These goals are served by studying bacterial genes that promote pathogenicity and the pathogenicity islands that mobilize them. Cyberinfrastructure promoting an island database advances this field and enables deeper bioinformatic analysis that may identify novel pathogenicity genes. New automated methods and rich visualizations were developed for identifying pathogenicity islands, based on the principle that islands occur sporadically among closely related strains. The chromosomally-ordered pan-genome organizes all genes from a clade of strains; gaps in this visualization indicate islands, and decorations of the gene matrix facilitate exploration of island gene functions. A %E2%80%9Clearned phyloblocks%E2%80%9D method was developed for automated island identification, that trains on the phylogenetic patterns of islands identified by other methods. Learned phyloblocks better defined termini of previously identified islands in multidrug-resistant Klebsiella pneumoniae ATCC BAA-2146, and found its only antibiotic resistance island.

Williams, Kelly Porter

2013-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

82

A signature for turbulence driven magnetic islands  

SciTech Connect (OSTI)

We investigate the properties of magnetic islands arising from tearing instabilities that are driven by an interchange turbulence. We find that such islands possess a specific signature that permits an identification of their origin. We demonstrate that the persistence of a small scale turbulence maintains a mean pressure profile, whose characteristics makes it possible to discriminate between turbulence driven islands from those arising due to an unfavourable plasma current density gradient. We also find that the island poloidal turnover time, in the steady state, is independent of the levels of the interchange and tearing energy sources. Finally, we show that a mixing length approach is adequate to make theoretical predictions concerning island flattening in the island rotation frame.

Agullo, O.; Muraglia, M.; Benkadda, S. [Aix-Marseille Université, CNRS, PIIM, UMR 7345 Marseille (France); France-Japan Magnetic Fusion Laboratory, LIA 336 CNRS, Marseille (France); Poyé, A. [Univ. Bordeaux, CNRS, CEA, CELIA (Centre Lasers Intenses et Applications), UMR 5107, F-33405 Talence (France); Yagi, M. [Plasma Theory and Simulation Gr., JAEA, Rokkasho (Japan); Garbet, X. [IRFM, CEA, St-Paul-Lez-Durance 13108 (France); Sen, A. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

2014-09-15T23:59:59.000Z

83

Two-fluid magnetic island dynamics in slab geometry: I -Isolated islands  

E-Print Network [OSTI]

that there be zero net electromagnetic force acting on the island. Finally, the ion polarization current correction determination of the island phase-velocity, and the calculation of the ion and electron fluid flow profiles

Fitzpatrick, Richard

84

Pennsylvania Nuclear Profile - Three Mile Island  

U.S. Energy Information Administration (EIA) Indexed Site

Three Mile Island" "Unit","Summer capacity (mw)","Net generation (thousand mwh)","Summer capacity factor (percent)","Type","Commercial operation date","License expiration date"...

85

Southern California Channel Islands Bibliography, through 1992  

E-Print Network [OSTI]

atmospheres/Radioactive isotopes/Air/Sampling/Monitoring/Atmospheric chemistry/Radon 222/San Nicolas Island/Atmospheric Sciences/Radioactivity/Radioactive Wastes/pollution/

Channel Islands National Marine Sanctuary

1992-01-01T23:59:59.000Z

86

Nauru Island Effect Detection Data Set  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

During Nauru99 it was noted that the island was producing small clouds that advected over the ARM site. The Nauru Island Effect Study was run for 1.5 years and the methodology developed to detect the occurrence. Nauru ACRF downwelling SW, wind direction, and air temperature data are used, along with downwelling SW data from Licor radiometers located on the southern end of the island near the airport landing strip. A statistical analysis and comparison of data from the two locations is used to detect the likely occurrence of an island influence on the Nauru ACRF site data

Long, Chuck

87

ANNUAL WIND DATA REPORT Thompson Island  

E-Print Network [OSTI]

ANNUAL WIND DATA REPORT Thompson Island March 1, 2002 ­ February 28, 2003 Prepared.................................................................................................................... 11 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distributions

Massachusetts at Amherst, University of

88

WIND DATA REPORT Deer Island Parking Lot  

E-Print Network [OSTI]

WIND DATA REPORT Deer Island Parking Lot May 1, 2003 ­ July 15, 2003 Prepared for Massachusetts...................................................................................................................... 7 Wind Speed Time Series............................................................................................................. 7 Wind Speed Distributions

Massachusetts at Amherst, University of

89

WIND DATA REPORT Deer Island Outfall  

E-Print Network [OSTI]

WIND DATA REPORT Deer Island Outfall August 18, 2003 ­ December 4, 2003 Prepared for Massachusetts...................................................................................................................... 7 Wind Speed Time Series............................................................................................................. 7 Wind Speed Distributions

Massachusetts at Amherst, University of

90

Energy Transition Initiative: Islands Playbook (Book) | OSTI...  

Office of Scientific and Technical Information (OSTI)

Energy Transition Initiative: Islands Playbook (Book) Re-direct Destination: Temp Data Fields Not Available Temp Data Storage 3: National Renewable Energy Laboratory (NREL),...

91

Three Mile Island: then and now  

SciTech Connect (OSTI)

A review of the Three Mile Island Unit 2 accident is presented. Current activities to clean up the reactor are described.

Trauger, D.B.

1980-01-01T23:59:59.000Z

92

Northern Mariana Islands - Territory Energy Profile Overview...  

U.S. Energy Information Administration (EIA) Indexed Site

islands of Pagan and Saipan - unique in Micronesia in having abundant geothermal energy potential, and CNMI has excellent resources for both wind and solar power. CNMI enacted a...

93

Aeromagnetic Survey And Interpretation, Ascention Island, South...  

Open Energy Info (EERE)

Interpretation, Ascention Island, South Atlantic Ocean Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article: Aeromagnetic Survey And Interpretation,...

94

Morphological barrier island changes and recovery of dunes after Hurricane Dennis, St. George Island, Florida  

E-Print Network [OSTI]

of the barrier island are analyzed, along with the short-term post-storm recovery of secondary dunes. ResultsMorphological barrier island changes and recovery of dunes after Hurricane Dennis, St. George September 2009 Keywords: Dune recovery LiDAR Overwash Hurricane Dennis Barrier island During the summer

Fagherazzi, Sergio

95

HEALTH EFFECTS OF THE NUCLEAR ACCIDENT AT THREE MILE ISLAND  

E-Print Network [OSTI]

Commission on the Accident at Three Mile Island (Fabrikant,Commission on the Accident at Three Mile Island. (Fahrikant,Commission on the Accident at Three Mile Island. (Fabrikant,

Fabrikant, J.I.

2010-01-01T23:59:59.000Z

96

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

97

YOU ARE CORDIALLY INVITED 2011 Long Island  

E-Print Network [OSTI]

and success of the green industry on Long Island. Thanks to Fred Soviero, this year's Leader's Forum, country sausage, seasoned potatoes, coffee, tea, and assorted fruit juices. Following breakfast, the two, and announcements to New York's green industry. Thanks to the Friends of Long Island Horticulture and the NSLGA

Danforth, Bryan Nicholas

98

Biofuel Feedstock Inter-Island Transportation  

E-Print Network [OSTI]

Biofuel Feedstock Inter-Island Transportation Prepared for the U.S. Department of Energy Office agency thereof. #12;A Comparison of Hawaii's Inter-Island Maritime Transportation of Solid Versus Liquid of Honolulu Advertiser ISO Tank Container, courtesy of Hawaii Intermodal Tank Transport Petroleum products

99

Island-finding ability of marine turtles  

E-Print Network [OSTI]

of the equatorial Atlantic. To test the hypothesis that turtles use wind-borne cues to locate Ascension Island we back to the island. These find- ings strongly support the hypothesis that wind-borne cues are used that hatch- ling loggerhead turtles (Caretta caretta) have the ability to perceive the inclination

Hays, Graeme

100

Observation of energetic electrons within magnetic islands  

E-Print Network [OSTI]

that energetic electron fluxes peak at sites of compressed density within islands, which imposes a new constraintLETTERS Observation of energetic electrons within magnetic islands L.-J. CHEN1 *, A. BHATTACHARJEE1, University of New Hampshire, Durham, New Hampshire 03824, USA 2 National Astronomical Observatory of Japan, 2

Loss, Daniel

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

amchitka island alaska: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MA August 2005 Prepared for Massachusetts for August 2005 This update summarizes the monthly data results for the Thompson Island monitoring site Island for the month of August...

102

adak island alaska: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MA August 2005 Prepared for Massachusetts for August 2005 This update summarizes the monthly data results for the Thompson Island monitoring site Island for the month of August...

103

akutan island alaska: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MA August 2005 Prepared for Massachusetts for August 2005 This update summarizes the monthly data results for the Thompson Island monitoring site Island for the month of August...

104

The Biogeography of Globally Threatened Seabirds and Island Conservation Opportunities  

E-Print Network [OSTI]

and North Islands, Hispaniola, etc. ). The conservation ofand North Islands, Hispaniola, etc. ). The conservation ofGreater Antilles (Hispaniola) Lesser Antilles Galapagos

Spatz, Dena R.

2013-01-01T23:59:59.000Z

105

Power Plant Options Report for Thompson Island prepared by the  

E-Print Network [OSTI]

....................................................................... 2 2.2. Thompson Island electric load.......................................................................... 4 2.3. Thompson Island heating load....................................................................... 7 3. Grid-connected and Autonomous Renewable Power Systems ................................ 9 3

Massachusetts at Amherst, University of

106

Energy Transformation in the U.S. Virgin Islands | Department...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

About Us Initiatives & Projects Energy Transition Initiative Energy Transformation in the U.S. Virgin Islands Energy Transformation in the U.S. Virgin Islands Click on the...

107

Bainbridge Island Summary of Reported Data | Department of Energy  

Energy Savers [EERE]

Summary of Reported Data Bainbridge Island Summary of Reported Data Summary of data for Bainbridge Island, a partner in the U.S. Department of Energy's Better Buildings...

108

Commercial-Scale Renewable-Energy Grants (Rhode Island)  

Broader source: Energy.gov [DOE]

The Rhode Island Economic Development Corporation (RIEDC) provides incentives for renewable-energy projects. Incentive programs are funded by the Rhode Island Renewable Energy Fund (RIREF) and...

109

GA Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:GA-Solar

110

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

111

Native point defects in GaSb  

SciTech Connect (OSTI)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

2014-10-14T23:59:59.000Z

112

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

113

Beta decay of Ga-62  

E-Print Network [OSTI]

from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

114

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

115

Emergently Thermalized Islands in the Landscape  

E-Print Network [OSTI]

In this note, we point out that in the eternal inflation driven by the metastable vacua of the landscape, it might be possible that some large and local quantum fluctuations with the null energy condition violation can stride over the barriers between different vacua and straightly create some islands with radiation and matter in new vacua. Then these thermalized islands will evolve with the standard cosmology. We show that such islands may be consistent with our observable universe, while has some distinctly observable signals, which may be tested in coming observations.

Yun-Song Piao

2008-01-08T23:59:59.000Z

116

Lattice-engineered Si{sub 1-x}Ge{sub x}-buffer on Si(001) for GaP integration  

SciTech Connect (OSTI)

We report a detailed structure and defect characterization study on gallium phosphide (GaP) layers integrated on silicon (Si) (001) via silicon-germanium (SiGe) buffer layers. The presented approach uses an almost fully relaxed SiGe buffer heterostructure of only 400?nm thickness whose in-plane lattice constant is matched to GaP—not at room but at GaP deposition temperature. Single crystalline, pseudomorphic 270?nm thick GaP is successfully grown by metalorganic chemical vapour deposition on a 400?nm Si{sub 0.85}Ge{sub 0.15}/Si(001) heterosystem, but carries a 0.08% tensile strain after cooling down to room temperature due to the bigger thermal expansion coefficient of GaP with respect to Si. Transmission electron microscopy (TEM) studies confirm the absence of misfit dislocations in the pseudomorphic GaP film but growth defects (e.g., stacking faults, microtwins, etc.) especially at the GaP/SiGe interface region are detected. We interpret these growth defects as a residue of the initial 3D island coalescence phase of the GaP film on the SiGe buffer. TEM-energy-dispersive x-ray spectroscopy studies reveal that these defects are often correlated with stoichiometric inhomogeneities in the GaP film. Time-of-flight Secondary ion mass spectrometry detects sharp heterointerfaces between GaP and SiGe films with a minor level of Ga diffusion into the SiGe buffer.

Skibitzki, Oliver, E-mail: skibitzki@ihp-microelectronics.com; Zaumseil, Peter; Yamamoto, Yuji; Andreas Schubert, Markus [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Paszuk, Agnieszka; Hannappel, Thomas [Technische Universität Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Hatami, Fariba; Ted Masselink, W. [Institut für Physik, Humboldt Universität zu Berlin, Newtonstrasse 15, 12489 Berlin (Germany); Trampert, Achim [Paul Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Tillack, Bernd [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin (Germany); Schroeder, Thomas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Brandenburgische Technische Universität, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

2014-03-14T23:59:59.000Z

117

Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per Thousand Cubic Feet)Thousand

118

Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per Thousand Cubic

119

Price of Elba Island, GA Natural Gas LNG Imports from Egypt (Nominal  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per Thousand CubicDollars per

120

Price of Elba Island, GA Natural Gas LNG Imports from Egypt (Nominal  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per Thousand CubicDollars perDollars

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Price of Elba Island, GA Natural Gas LNG Imports from Equatorial Guinea  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per Thousand CubicDollars

122

Price of Elba Island, GA Natural Gas LNG Imports from Nigeria (Nominal  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per Thousand CubicDollarsDollars per

123

Price of Elba Island, GA Natural Gas LNG Imports from Trinidad and Tobago  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per Thousand CubicDollarsDollars

124

Price of Elba Island, GA Natural Gas LNG Imports from Trinidad and Tobago  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per Thousand

125

Elba Island, GA LNG Imports (Price) from Qatar (Dollars per Thousand Cubic  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 633 6221,237 1,471 2,114 2,970Cubic

126

Elba Island, GA LNG Imports (Price) from Qatar (Dollars per Thousand Cubic  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 633 6221,237 1,471 2,114 2,970CubicFeet) Year Jan

127

Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 633 6221,237 1,471 2,114 2,970CubicFeet) Year

128

Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet)  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 633 6221,237 1,471 2,114 2,970CubicFeet)

129

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 633 6221,237 1,471 2,114 2,970CubicFeet)(Million

130

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 633 6221,237 1,471 2,114

131

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents [OSTI]

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

132

Energy Audits on Prince Edward Island  

E-Print Network [OSTI]

High energy costs and uncertain supplies force industrial operators to seek out energy waste to keep costs down. The Enersave for Industry and Commerce program assists Prince Edward Island industries through an energy audit and grant program. A...

Hall, N. G.; Gillis, D.

1980-01-01T23:59:59.000Z

133

US Virgin Islands renewable energy future  

E-Print Network [OSTI]

The US Virgin Islands must face drastic changes to its electrical system. There are two problems with electricity production in the USVI-it's dirty and it's expensive. Nearly one hundred percent of the electricity in these ...

Oldfield, Brian (Brian K.)

2013-01-01T23:59:59.000Z

134

Solar School Program in Reunion Island  

E-Print Network [OSTI]

system efficiency. In Réunion Island, the industrial engineering laboratory is involved in the regional solar school program. Its aim is to gather some local construction actors (city technical offices, architects, civil engineers, specialized university...

David, M.; Adelard, L.

2004-01-01T23:59:59.000Z

135

CAYMAN ISLANDS National Biodiversity Action Plan  

E-Print Network [OSTI]

down to us by those who went before, the natural wealth and beauty which is ours. John F. Kennedy environment for the Cayman Islands. CH2M Hill "Study on the Provision of Construction Aggregate and Fill

Exeter, University of

136

Bainbridge Island Data Dashboard | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

The data dashboard for Bainbridge Island, a partner in the U.S. Department of Energy's Better Buildings Neighborhood Program. bban0003805pmcdashboardy13-q3.xls More Documents...

137

Metromorphosis : evolution on the urban island  

E-Print Network [OSTI]

Cities are very much alive. Like islands, they provide a natural testing ground for evolution. With more than half of the world's population living in urban areas now, the influence cities have on the planet's life is ...

Vezina, Kenrick (Kenrick Freitas)

2011-01-01T23:59:59.000Z

138

N. Mariana Islands- Renewables Portfolio Standard  

Broader source: Energy.gov [DOE]

The Commonwealth of the Northern Mariana Islands enacted its Renewables Portfolio Standard in September 2007, in which a certain percentage of its net electricity sales must come from renewable...

139

Macroalgal distribution at Lee Stocking Island, Bahamas  

E-Print Network [OSTI]

from the reef community, macroalgae have been increasing in abundance on the reefs surrounding Lee Stocking Island (LSI), Bahamas. Macroalgal patches prevent coral recruitment and growth, thereby restructuring the reef. In such cases, coral and algal...

Roberts, Jill Christie

1997-01-01T23:59:59.000Z

140

Qualifying RPS State Export Markets (Rhode Island)  

Broader source: Energy.gov [DOE]

This entry lists the states with Renewable Portfolio Standard (RPS) policies that accept generation located in Rhode Island as eligible sources towards their RPS targets or goals. For specific...

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

11 Life on Herbert Island (part 2)  

E-Print Network [OSTI]

last updated on Monday, 4 April 2011 Accession Form for Individual Recordings: Collection / Collector Name Stephen Leonard Tape No. / Track / Item No. 11 Length of track 45 minutes Title of track Life on Herbert Island (part 2) Translation...

Leonard, Stephen Pax

142

13 Life on Herbert Island (part 3)  

E-Print Network [OSTI]

last updated on Monday, 4 April 2011 Accession Form for Individual Recordings: Collection / Collector Name Stephen Leonard Tape No. / Track / Item No. 13 Length of track 30 minutes Title of track Life on Herbert Island (part 3) Translation...

Leonard, Stephen Pax

143

12 Life on Herbert Island (part 1)  

E-Print Network [OSTI]

last updated on Monday, 4 April 2011 Accession Form for Individual Recordings: Collection / Collector Name Stephen Leonard Tape No. / Track / Item No. 12 Length of track 1 hour 35 minutes Title of track Life on Herbert Island (part 1...

Leonard, Stephen Pax

144

DYER ISLAND CONSERVATION TRUST LETTER OF CONCERN  

E-Print Network [OSTI]

..........................................................................................................................8 4 GENERAL POTENTIAL IMPACTS OF THE NPS ON THE MARINE ENVIRONMENTDYER ISLAND CONSERVATION TRUST LETTER OF CONCERN ASSOCIATED WITH THE ESTABLISHMENT OF A NUCLEAR....................................................................................................................................6 3 THE MARINE ENVIRONMENT SURROUNDING BANTAMSKLIP

de Villiers, Marienne

145

U.S. Virgin Islands- Net Metering  

Broader source: Energy.gov [DOE]

In February 2007, the U.S. Virgin Islands Public Services Commission approved a limited net-metering program for residential and commercial photovoltaic (PV), wind-energy or other renewable energy...

146

Observations and seasonal periodicity of the benthic algae of Galveston Island, Texas  

E-Print Network [OSTI]

on the marine algae of Florida: The intertidal rocks at Marineland. Florida State Univ. Stud. 7: 17-23. 1956. Sea grasses of the northern Gulf coast. Bull. Mar. Sc. Gulf & Carib. 4: 305-308. 1963. Some new records and range extensions of Florida marine... an extensive study dealing with periodicity and dis- tribution of benthic marine algae in Louisiana. Offshore collec- tions were made in addition to well-spaced sites along the coast. Keatts (196g, unpublished} surveyed the algae on a rock jetty in Freeport...

Lowe, Glenn Curtis

1975-01-01T23:59:59.000Z

147

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

148

Snakes of the Lake ErieSnakes of the Lake Erie IslandsIslands  

E-Print Network [OSTI]

and were modified by human activities suchand were modified by human activities such as quarrying and farmingas quarrying and farming #12;Attempts were made to eradicate snakes from the islands #12;#12;...and;· Found throughout Ohio · Locally found in the quarries of Kelleys island and on the shoreline of Johnson

King, Richard B.

149

Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs  

E-Print Network [OSTI]

AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

Gao, Feng, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

150

Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA  

E-Print Network [OSTI]

Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

McGaughey, Alan

151

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network [OSTI]

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Boyer, Edmond

152

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

153

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

154

TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer  

SciTech Connect (OSTI)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

2008-01-01T23:59:59.000Z

155

Photovoltaic applications for remote-island needs  

SciTech Connect (OSTI)

Electric power supply options available to many of the central and south Pacific island governments are severely constrained by remoteness, limited infrastructures, a corrosive natural environment, and the high delivered costs of many conventional energy sources. Photovoltaic energy systems offer a currently available, practical, and cost-effective source of electricity for many stand-alone applications in remote areas of the Pacific. Photovoltaic system definitions and cost analyses are provided for selected applications in the Republic of Palau, the Federated States of Micronesia, the Republic of the Marshall Islands, and the Territory of American Samoa.

Schaller, D.A.

1983-01-01T23:59:59.000Z

156

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

157

Perceptions of nature in the Caribbean island of Dominica   

E-Print Network [OSTI]

The Commonwealth of Dominica has acquired a reputation as the nature island of the Caribbean. This thesis sets out to explore how Dominicans perceive and relate to nature in their nature island. It considers these perceptions ...

Yarde, Therese Natalie

2012-11-29T23:59:59.000Z

158

U.S. Virgin Islands- Renewables Portfolio Targets  

Broader source: Energy.gov [DOE]

In July 2009, the Virgin Islands passed Act 7075. Among other provisions, the legislation establishes that the "peak demanded generating capacity" of the Virgin Islands Water and Power Authority*...

159

Community Economic Development Business Program (Prince Edward Island, Canada)  

Broader source: Energy.gov [DOE]

The Community Economic Development Business (CEDB) program has been created as part of the Prince Edward Island Rural Action Plan to support local investment in innovative Prince Edward Island...

160

Genomic islands predict functional adaptation in marine actinobacteria  

E-Print Network [OSTI]

Ecological adaptations among bacterial populations have been linked to genomic islands, strain-specific regions of DNA that house

Penn, Kevin

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Rapan lifeways : society and history on a Polynesian island  

E-Print Network [OSTI]

RAPAN LIFEWAYS Society and history on a Polynesian island F. Allan Hanson RAPAN LIFEWAYS Society and History on a Polynesian Island ? % * ^Oahu ? Hawaii 1 1 1 - s PACIFIC OCEAN FRENCH r~ | MARQUESAS :" | ISLANDS ' 1 TUAto0Tu Tahiti ?:"._., Rurutu... ^^-j 1 Rimatara a * Tubl?'' "% 160" Ra'ivavae ^ ^ RAPA 1 TROPIC OF CANCER POLYNESIA v iii ii ii ii i " ???? -?? ! TROPIC OF CAPRICORN y 0? / Pitcaira RAPAN LIFEWAYS Society and History on a Polynesian Island F ALLAN HANSON The University of Kansas...

Hanson, F. Allan

2006-01-01T23:59:59.000Z

162

Azania XLII 2007 East Africa, the Comoros Islands and  

E-Print Network [OSTI]

Azania XLII 2007 East Africa, the Comoros Islands and Madagascar before the sixteenth century interior and on outlying islands (Comoros, Madagascar) or were composed of lower classes in urban expansion and private enterprise. #12;16 East Africa, the Comoros Islands and Madagascar before

Paris-Sud XI, Université de

163

current encounters a large island (main islands of Palau) basin-scale currents are driven by winds  

E-Print Network [OSTI]

Summary · current encounters a large island (main islands of Palau) · basin-scale currents are driven by winds · strong boundary currents like Gulf Stream · Palau has a boundary current · current

Johnston, Shaun

164

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

165

Energy Transition Initiative: Islands Playbook (Book)  

SciTech Connect (OSTI)

The Island Energy Playbook (the Playbook) provides an action-oriented guide to successfully initiating, planning, and completing a transition to an energy system that primarily relies on local resources to eliminate a dependence on one or two imported fuels. It is intended to serve as a readily available framework that any community can adapt to organize its own energy transition effort.

Not Available

2015-01-01T23:59:59.000Z

166

US Army Corps of Engineers Caribbean Islands Region Version 2.0 WETLAND DETERMINATION DATA FORM Caribbean Islands Region  

E-Print Network [OSTI]

US Army Corps of Engineers Caribbean Islands Region ­ Version 2.0 WETLAND DETERMINATION DATA FORM ­ Caribbean Islands Region Project/Site: Municipality/Town: Sampling Date: Applicant/Owner: PR or USVI or problematic. Hydrophytic Vegetation Present? Yes No Remarks: #12;US Army Corps of Engineers Caribbean Islands

US Army Corps of Engineers

167

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

168

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures  

SciTech Connect (OSTI)

In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

2014-01-13T23:59:59.000Z

169

Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire  

SciTech Connect (OSTI)

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-08T23:59:59.000Z

170

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

171

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

172

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

173

Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)-(4x2)  

SciTech Connect (OSTI)

Hafnium oxide interfaces were studied on two related group III rich semiconductor surfaces, InAs(0 0 1)-(4x2) and In{sub 0.53}Ga{sub 0.47}As(0 0 1)-(4x2), via two different methods: reactive oxidation of deposited Hf metal and electron beam deposition of HfO{sub 2}. The interfaces were investigated with scanning tunneling microscopy and spectroscopy (STS). Single Hf atom chemisorption sites were identified that are resistant to oxidation by O{sub 2}, but Hf islands are reactive to O{sub 2}. After e{sup -} beam deposition of <<1 ML of HfO{sub 2}, single chemisorption sites were identified. At low coverage (<1 ML), the n-type and p-type HfO{sub 2}/InGaAs(0 0 1)-(4x2) interfaces show p-type character in STS, which is typical of clean InGaAs(0 0 1)-(4x2). After annealing below 200 deg. C, full coverage HfO{sub 2}/InGaAs(0 0 1)-(4x2) (1-3 ML) has the surface Fermi level shifted toward the conduction band minimum for n-type InGaAs, but near the valence band maximum for p-type InGaAs. This is consistent with the HfO{sub 2}/InGaAs(0 0 1)-(4x2) interface being at least partially unpinned, i.e., a low density of states in the band gap. The partially unpinned interface results from the modest strength of the bonding between HfO{sub 2} and InGaAs(0 0 1)-(4x2) that prevents substrate atom disruption. The fortuitous structure of HfO{sub 2} on InAs(0 0 1)-(4x2) and InGaAs(0 0 1)-(4x2) allows for the elimination of the partially filled dangling bonds on the surface, which are usually responsible for Fermi level pinning.

Clemens, Jonathon B.; Bishop, Sarah R.; Kummel, Andrew C. [Department of Chemistry and Biochemistry, University of California, San Diego, 9500 Gilman Dr., 0358, La Jolla, California 92093-0358 (United States); Lee, Joon Sung [Department of Chemistry and Biochemistry/Materials Science and Engineering Program, University of California, San Diego, 9500 Gilman Dr., 0358, La Jolla, California 92093-0358 (United States); Droopad, Ravi [Department of Physics, Texas State University-San Marcos, San Marcos, Texas 78666 (United States)

2010-06-28T23:59:59.000Z

174

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

175

InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall  

E-Print Network [OSTI]

°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

Woodall, Jerry M.

176

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network [OSTI]

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

177

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

178

Grey Island Energy Inc | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio:Greer County is a county in Oklahoma. Its FIPSGresham Park,Grey Island

179

Lessons Learned in Islands | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels DataCombined HeatInformation ResourcesIsland EnergyLabLeadership

180

Resuspension studies in the Marshall Islands  

SciTech Connect (OSTI)

The contribution of inhalation exposure to the total dose for residents of the Marshall Islands was monitored at occasions of opportunity on several islands in the Bikini and Enewetak Atolls. To determine the long-term potential for inhalation exposure, and to understand the mechanisms of redistribution and personal exposure, additional investigations were undertaken on Bikini Island under modified and controlled conditions. Experiments were conducted to provide key parameters for the assessment of inhalation exposure from plutonium-contaminated dust aerosols: characterization of the contribution of plutonium in soil-borne aerosols as compared to sea spray and organic aerosols, determination of plutonium resuspension rates as measured by the meteorological flux-gradient method during extreme conditions of a bare-soil vs. a stabilized surface, determination of the approximate individual exposures to resuspended plutonium by traffic, and studies of exposures to individuals in different occupational environments simulated by personal air sampling of workers assigned to a variety of tasks. Enhancement factors (defined as ratios of the plutonium-activity), of suspended aerosols relative to the plutonium-activity of the soil were determined to be less than 1 (typically 0.4 to 0.7) in the undisturbed, vegetated areas, but greater than 1 (as high as 3) for the case studies of disturbed bare soil, roadside travel, and for occupational duties in fields and in and around houses. 12 refs., 5 figs., 8 tabs.

Shinn, J.H.; Homan, D.N.; Robison, W.L. [Lawrence Livermore National Lab., CA (United States)

1997-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Suggested guidelines for anti-islanding screening.  

SciTech Connect (OSTI)

As increasing numbers of photovoltaic (PV) systems are connected to utility systems, distribution engineers are becoming increasingly concerned about the risk of formation of unintentional islands. Utilities desire to keep their systems secure, while not imposing unreasonable burdens on users wishing to connect PV. However, utility experience with these systems is still relatively sparse, so distribution engineers often are uncertain as to when additional protective measures, such as direct transfer trip, are needed to avoid unintentional island formation. In the absence of such certainty, utilities must err on the side of caution, which in some cases may lead to the unnecessary requirement of additional protection. The purpose of this document is to provide distribution engineers and decision makers with guidance on when additional measures or additional study may be prudent, and also on certain cases in which utilities may allow PV installations to proceed without additional study because the risk of an unintentional island is extremely low. The goal is to reduce the number of cases of unnecessary application of additional protection, while giving utilities a basis on which to request additional study in cases where it is warranted.

Ellis, Abraham; Ropp, Michael

2012-02-01T23:59:59.000Z

182

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires  

SciTech Connect (OSTI)

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14T23:59:59.000Z

183

Distillation and Dehydro Reactors Advanced Process Conrol Freeport Texas PLant  

E-Print Network [OSTI]

Input Screen 6/2/2014 INTERNAL; CONFIDENTIAL 18 • External Targets such as desired dehydro reactor feed rates are inputs to the APC screen with dependent variables. • There are only six external targets. • The upper and lower limits are shown... – Results July and August 2013 6/2/2014 INTERNAL; CONFIDENTIAL 30 Cost of the Dehydro Reactors APC Project - $273,000 Initial Project Targets for the APC Project Feed Increase of 232 lb/hr. One Percent Decrease in Steam Usage Measured Results for the APC...

Eisele, D.

2014-01-01T23:59:59.000Z

184

EIS-0487: Freeport LNG Liquefaction Project, Brazoria County, Texas |  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists'Montana.Program - LibbyofThisStatement | Department of Energy EPA announces

185

Energy Department Authorizes Additional Volume at Proposed Freeport LNG  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelinesProvedDecember 2005DepartmentDecember 2011 EMABDevelopment | DepartmentMaterial

186

ORDER NO. 3357: Freeport LNG | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGYWomen OwnedofDepartment ofJaredOakscience-based,OHA FOIA Cases

187

Freeport, TX Liquefied Natural Gas Exports (Million Cubic Feet)  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 6330 0 1 0 0 0Thousand CubicFeet) Year(Million

188

Freeport, TX Liquefied Natural Gas Exports Price (Dollars per Thousand  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 6330 0 1 0 0 0Thousand CubicFeet)

189

Freeport, TX Liquefied Natural Gas Exports Price (Dollars per Thousand  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 6330 0 1 0 0 0Thousand CubicFeet)Cubic Feet)

190

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template  

SciTech Connect (OSTI)

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-12-19T23:59:59.000Z

191

REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based  

E-Print Network [OSTI]

the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit), metal oxide varistor (MOV), and transient voltage suppressor (TVS) diodes are the state-of-the- artREGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal­Semiconductor­Metal

Chow, Lee

192

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

193

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets  

SciTech Connect (OSTI)

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

2014-09-21T23:59:59.000Z

194

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

195

Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)  

SciTech Connect (OSTI)

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2013-12-02T23:59:59.000Z

196

A Statistical Model of Magnetic Islands in a Large Current Layer  

E-Print Network [OSTI]

We develop a statistical model describing the dynamics of magnetic islands in very large current layers that develop in space plasma. Two parameters characterize the island distribution: the flux contained in the island and the area it encloses. We derive an integro-differential evolution equation for this distribution function, based on rules that govern the small-scale generation of secondary islands, the rates of island growth, and island merging. Our numerical solutions of this equation produce island distributions relevant to the magnetosphere and corona. We also derive and analytically solve a differential equation for large islands that explicitly shows the role merging plays in island growth.

Fermo, R L; Swisdak, M

2009-01-01T23:59:59.000Z

197

Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy  

SciTech Connect (OSTI)

The interfacial misfit (IMF) dislocation array of an epitaxial GaSb film on a Si substrate has been imaged with high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The mismatch strain accommodation through dislocation formation has been investigated using geometric phase analysis (GPA) on HAADF-STEM images with atomic resolution to probe the defects' local strain distribution. These measurements indicate that the lattice parameter of the epitaxial film recovers its bulk value within three unit cells from the interface due to the relaxation through IMF dislocations. The atomic number contrast of the HAADF-STEM images and energy dispersive x-ray spectrometry illustrate the formation of islands of AlSb buffer layer along the interface. The role of the AlSb buffer layer in facilitating the GaSb film growth on Si is further elucidated by investigating the strain field of the islands with the GPA.

Vajargah, S. Hosseini; Couillard, M.; Cui, K. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Tavakoli, S. Ghanad; Robinson, B.; Kleiman, R. N.; Preston, J. S. [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Botton, G. A. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2011-02-21T23:59:59.000Z

198

Celebrating Asian American Pacific Islander Heritage Month at...  

Energy Savers [EERE]

Asian Americans, Native Hawaiians, and Pacific Islanders at the Energy Department, in the energy workforce, and throughout history. Headquarter employees and members of the general...

199

,"Grand Island, NY Natural Gas Pipeline Imports From Canada ...  

U.S. Energy Information Administration (EIA) Indexed Site

Imports From Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Grand Island,...

200

Hypersonic drift-tearing magnetic islands in tokamak plasmas  

SciTech Connect (OSTI)

A two-fluid theory of long wavelength, hypersonic, drift-tearing magnetic islands in low-collisionality, low-{beta} plasmas possessing relatively weak magnetic shear is developed. The model assumes both slab geometry and cold ions, and neglects electron temperature and equilibrium current gradient effects. The problem is solved in three asymptotically matched regions. The 'inner region' contains the island. However, the island emits electrostatic drift-acoustic waves that propagate into the surrounding 'intermediate region', where they are absorbed by the plasma. Since the waves carry momentum, the inner region exerts a net force on the intermediate region, and vice versa, giving rise to strong velocity shear in the region immediately surrounding the island. The intermediate region is matched to the surrounding 'outer region', in which ideal magnetohydrodynamic holds. Isolated hypersonic islands propagate with a velocity that lies between those of the unperturbed local ion and electron fluids, but is much closer to the latter. The ion polarization current is stabilizing, and increases with increasing island width. Finally, the hypersonic branch of isolated island solutions ceases to exist above a certain critical island width. Hypersonic islands whose widths exceed the critical width are hypothesized to bifurcate to the so-called 'sonic' solution branch.

Fitzpatrick, R.; Waelbroeck, F. L. [Institute for Fusion Studies, Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States)

2007-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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201

Validation in Genomics: CpG Island Methylation Revisited  

E-Print Network [OSTI]

analysis. In: Functional Genomics: Methods and Protocols, M.Segal: Validation in Genomics: CpG Island Methylationpackage and applications to genomics. Bioinformatics and

Segal, Mark R

2006-01-01T23:59:59.000Z

202

Commonwealth of Northern Mariana Islands Initial Technical Assessment  

SciTech Connect (OSTI)

This document is an initial energy assessment for the Commonwealth of the Northern Mariana Islands (CNMI), the first of many steps in developing a comprehensive energy strategy.

Baring-Gould, I.; Hunsberger, R.; Visser, C.; Voss, P.

2011-07-01T23:59:59.000Z

203

Energy Office Grant Helps the Virgin Islands Environmental Resource...  

Office of Environmental Management (EM)

Energy Office Grant Helps the Virgin Islands Environmental Resource Station Install Solar Panels, Improve Efficiency, and Cut Monthly Energy Use Nearly 30% Energy Office Grant...

204

U.S. Virgin Islands Leadership Embraces Inclusiveness to Ensure...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Leadership Embraces Inclusiveness to Ensure Community Ownership of Clean Energy Vision U.S. Virgin Islands Leadership Embraces Inclusiveness to Ensure Community Ownership of Clean...

205

Comparison of Secondary Islands in Collisional Reconnection to Hall Reconnection  

SciTech Connect (OSTI)

Large-scale resistive Hall-magnetohydrodynamic simulations of the transition from Sweet-Parker (collisional) to Hall (collisionless) magnetic reconnection are presented; the first to separate secondary islands from collisionless effects. Three main results are described. There exists a regime with secondary islands but without collisionless effects, and the reconnection rate is faster than Sweet-Parker, but significantly slower than Hall reconnection. This implies that secondary islands do not cause the fastest reconnection rates. The onset of Hall reconnection ejects secondary islands from the vicinity of the X line, implying that energy is released more rapidly during Hall reconnection. Coronal applications are discussed.

Shepherd, L. S.; Cassak, P. A. [Department of Physics, West Virginia University, Morgantown, West Virginia, 26506 (United States)

2010-07-02T23:59:59.000Z

206

antilles island arc: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The morphology of the underthrust oceanic crust controls the mag matic activity of the island arc, and particularly the development, in space and time, of "arc compartments." Denis...

207

Long Island Power Authority- Commercial Energy Efficiency Rebate Program  

Broader source: Energy.gov [DOE]

Long Island Power Authority offers a variety of incentives for its non-residential customers to increase the energy efficiency of facilities through the Commercial Efficiency Program. Major...

208

Quantum confinement in GaP nanoclusters  

SciTech Connect (OSTI)

We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

Laurich, B.K.; Smith, D.C.; Healy, M.D.

1994-06-01T23:59:59.000Z

209

Interconnecting gold islands with DNA origami  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickrinformation for and NovelFEG-SEM with0,Interconnecting gold islands

210

Marshall Islands: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar Powerstories on climateJunoMedanos EnergyMMalawi:Manassas is aisIslands: Energy

211

Solomon Islands: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty Ltd Jump to:InformationSolergy Power JumpIslands: Energy Resources Jump to:

212

Recovery Act State Memos Mariana Islands  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L dDepartment ofList?Department09 SectionGeorgia ForIowaMariana Islands

213

Recovery Act State Memos Virgin Islands  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L dDepartment ofList?Department09Jersey ForDakota ForVirgin Islands For

214

Alternative Fuels Data Center: Rhode Island Information  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth (AOD)ProductssondeadjustsondeadjustAbout theOFFICE OFFuelsPropane Tank Overfill SafetyVehicleRhode Island

215

Offshore Islands Ltd | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's HeatMexico:CommunityNorthwest BasinOahu,12 YeomanIslands Ltd Region:

216

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

217

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

218

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

219

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots  

SciTech Connect (OSTI)

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06T23:59:59.000Z

220

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes  

SciTech Connect (OSTI)

We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

2013-12-04T23:59:59.000Z

222

On strongly GA-convex functions and stochastic processes  

SciTech Connect (OSTI)

In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

2014-08-20T23:59:59.000Z

223

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

224

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network [OSTI]

Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

Carroll, James Mason

2012-06-07T23:59:59.000Z

225

Wave Energy Resources Representative Sites Around the Hawaiian Islands  

E-Print Network [OSTI]

Wave Energy Resources for Representative Sites Around the Hawaiian Islands Prepared by: Luis A. Vega Ph.D October 11, 2010 #12;Wave Power Resources off the Hawaiian Islands October 11, 2010 1 Foreword This report provides wave energy resource information required to select coastal segments

226

Hierarchical Control Scheme for Voltage Unbalance Compensation in Islanded Microgrids  

E-Print Network [OSTI]

Hierarchical Control Scheme for Voltage Unbalance Compensation in Islanded Microgrids Mehdi@et.aau.dk Abstract-- The concept of microgrid hierarchical control is presented, recently. In this paper, a hierarchical scheme which includes primary and secondary control levels is proposed for islanded microgrids

Vasquez, Juan Carlos

227

Drift-tearing magnetic islands in tokamak plasmas  

SciTech Connect (OSTI)

A systematic fluid theory of nonlinear magnetic island dynamics in conventional low-{beta}, large aspect-ratio, circular cross-section tokamak plasmas is developed using an extended magnetohydrodynamics model that incorporates diamagnetic flows, ion gyroviscosity, fast parallel electron heat transport, the ion sound wave, the drift wave, and average magnetic field-line curvature. The model excludes the compressible Alfven wave, geodesic field-line curvature, neoclassical effects, and ion Landau damping. A collisional closure is used for plasma dynamics parallel to the magnetic field. Two distinct branches of island solutions are found, namely the 'sonic' and 'hypersonic' branches. Both branches are investigated analytically, using suitable ordering schemes, and in each case the problem is reduced to a relatively simple set of nonlinear differential equations that can be solved numerically via iteration. The solution determines the island phase velocity, relative to the plasma, and the effect of local currents on the island stability. Sonic islands are relatively wide, flatten both the temperature and density profiles, and tend to propagate close to the local ion fluid velocity. Hypersonic islands, on the other hand, are relatively narrow, only flatten the temperature profile, radiate drift-acoustic waves, and tend to propagate close to the local electron fluid velocity. The hypersonic solution branch ceases to exist above a critical island width. Under normal circumstances, both types of island are stabilized by local ion polarization currents.

Fitzpatrick, R.; Waelbroeck, F. L. [Institute for Fusion Studies, Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States)

2008-01-15T23:59:59.000Z

228

Introduction The island of Hispaniola has reduced its malaria burden,  

E-Print Network [OSTI]

Introduction The island of Hispaniola has reduced its malaria burden, with parasite prevalence feasible. The risk of imported malaria cases to the island of Hispaniola appears extremely low, e.g., fewer than 10 infections were imported from outside Hispaniola to the Dominican Republic in 2012. Based

Klein, Ophir

229

Virgin Islands Water Resources Research Institute Annual Technical Report  

E-Print Network [OSTI]

of the biological contamination of waters that have been used for the last 100 years have been shown to lack certainVirgin Islands Water Resources Research Institute Annual Technical Report FY 2000 Introduction The Virgin Islands Water Resources Research Institute (WRRI) is a unit of the University of the Virgin

230

Island Bellwether: Climate Change and Energy Policy Strategy  

E-Print Network [OSTI]

responsible for current and forecast global warming · Fossil fuel energy systems are the primary cause of GHGa) Island Bellwether: Climate Change and Energy Policy Strategy for Small Island Developing States John Byrne, Leigh Glover, Vernese Inniss and Gerard Alleng Center for Energy and Environmental Policy

Delaware, University of

231

Virgin Islands Water Resources Research Institute Annual Technical Report  

E-Print Network [OSTI]

water is a concern, so too is proper disposal of wastewater. The Virgin Islands Water Resources Research with cistern water quality, treatment of wastewater from aquaponic systems and sediment export from watersheds is a major concern in the Territory of the US Virgin Islands. As part of our endeavour to do a detailed

232

A Distributed Generation Control Architecture for Islanded AC Microgrids  

E-Print Network [OSTI]

1 A Distributed Generation Control Architecture for Islanded AC Microgrids Stanton T. Cady, Student Member, IEEE Abstract In this paper, we propose a distributed architecture for generation control in islanded ac microgrids with both synchronous generators and inverter-interfaced power supplies. Although

Dominguez-Garcia, Alejandro

233

Forensic identification: the Island Problem and its generalisations  

E-Print Network [OSTI]

Forensic identification: the Island Problem and its generalisations Klaas Slooten and Ronald Meester April 26, 2010 Abstract In forensics it is a classical problem to determine, when a suspect by a likelihood ratio. Keywords: Island problem, Forensic identification, Weight of evidence, Posterior odds

Meester, Ronald

234

E-Print Network 3.0 - abruka island west Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

<< < 1 2 3 4 5 > >> 41 William W. Hay Railroad Engineering Seminar Summary: 12;Powerhouse Island Powerhouse Island West Bank West Bank Kentucky Lake Kentucky Lake...

235

E-Print Network 3.0 - autonomous island networks Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of the communities on Lord Howe Island and Norfolk Island is highly connected social networks. Research participants... confidentiality) would be received by the communities...

236

Height stabilization of GaSb/GaAs quantum dots by Al-rich capping  

SciTech Connect (OSTI)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-09-01T23:59:59.000Z

237

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates  

SciTech Connect (OSTI)

The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

2013-05-07T23:59:59.000Z

238

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

239

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network [OSTI]

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

240

AlGaAs/GaAs photovoltaic converters for high power narrowband radiation  

SciTech Connect (OSTI)

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

2014-09-26T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

242

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

243

Wave Power Resources off the Hawaiian Islands luisvega@hawaii.edu Wave Resources for Representative Sites Around the Hawaiian Islands  

E-Print Network [OSTI]

Wave Power Resources off the Hawaiian Islands luisvega@hawaii.edu 1 Wave Resources for Representative Sites Around the Hawaiian Islands Table of Contents Summary p2 Background: Wave Power Conversion p3 Licensing and Permitting p3 Challenges and Barriers p4 Wave Power Resources: Previous Work p5 Wave

244

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

245

Distributed Wind Case Study: Cross Island Farms, Wellesley Island, New York (Fact Sheet)  

SciTech Connect (OSTI)

Installing a small wind turbine can sometimes be difficult due to economics, zoning issues, public perception, and other barriers. Persistence and innovation, however, can result in a successful installation. Dani Baker and David Belding own Cross Island Farms, a 102-acre certified organic farm on Wellesley Island in northern New York. In 2009, they took their interest in renewable energy to the next level by researching the logistics of a small wind installation on their land to make their farm even more sustainable. Their renewable energy system consists of one 10-kilowatt Bergey Excel wind turbine, a solar array, and a propane-powered generator. This case study describes funding for the project and the installation process.

Not Available

2012-04-01T23:59:59.000Z

246

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

247

Three Mile Island: the financial fallout  

SciTech Connect (OSTI)

The nuclear accident at Three Mile Island raised serious questions about the financial ability of the electric utility company owners to clean up and repair the damaged reactor facilities while continuing to provide reliable electric service to customers. Financial insolvency of the companies is not imminent and power supplies are assured for the immediate future. However, the loss of earnings capability by the Metropolitan Edison Company makes it questionable whether it can fund its share of the clean-up costs and maintain system reliability without large rate increases or some external financial assistance. The accident has shown that the utilities and Federal and State regulatory agencies were not prepared to deal with recovery from such a large financial loss. The Department of Energy should move swiftly to assess the financial needs of the affected utilities and develop plans for meeting them.

Not Available

1980-07-07T23:59:59.000Z

248

Three Mile Island: meltdown of democracy  

SciTech Connect (OSTI)

Strong local opposition to a start-up of Unit 1 at Three Mile Island continues because citizen distrust of General Public Utilities was found in post-accident studies to have been justified. Several citizen groups have monitored the Unit 2 clean-up activities and have not been reassured by either the President's Commission or the Nuclear Regulatory Commission. Efforts to improve public relations by distributing radiation kits or other strategies have been outweighed by evidence of government manipulation of early bomb test data and poor industry planning. Arguments over who is responsible for the accident and who is liable for the cost have further undermined credibility. Area residents have received three recent legal signals that their position may prevail. (DCK)

Walsh, E.J.

1983-03-01T23:59:59.000Z

249

Subsidence at the Weeks Island SPR Facility  

SciTech Connect (OSTI)

The elevation change data measured at the Weeks Island SPR site over the last 16+ years has been studied and analyzed. The subsidence rate is not constant with time and while the subsidence rate may have increased slightly during the past several years, recently the rate has increased more dramatically. The most recent increase comes at a time when the Strategic Petroleum Reserve (SPR) storage mine had been emptied of oil and was in the process of being refilled with brine. Damage to surface structures that has been observed during the past 12-18 months is attributed to the continued subsidence and dtierential subsidence across structures. The recent greater subsidence rates were unanticipated according to analysis results and will be used to aid further subsidence model development.

Bauer, S.J.

1999-01-01T23:59:59.000Z

250

The Marshall Islands Data Management Program  

SciTech Connect (OSTI)

This report is a resource document of the methods and procedures used currently in the Data Management Program of the Marshall Islands Dose Assessment and Radioecology Project. Since 1973, over 60,000 environmental samples have been collected. Our program includes relational database design, programming and maintenance; sample and information management; sample tracking; quality control; and data entry, evaluation and reduction. The usefulness of scientific databases involves careful planning in order to fulfill the requirements of any large research program. Compilation of scientific results requires consolidation of information from several databases, and incorporation of new information as it is generated. The success in combining and organizing all radionuclide analysis, sample information and statistical results into a readily accessible form, is critical to our project.

Stoker, A.C.; Conrado, C.L.

1995-09-01T23:59:59.000Z

251

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents [OSTI]

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

252

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

253

Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure  

SciTech Connect (OSTI)

Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

2014-03-21T23:59:59.000Z

254

Influence of air conditioning management on heat island in Paris air street temperatures  

E-Print Network [OSTI]

Influence of air conditioning management on heat island in Paris air street temperatures Brice 2012 Available online 13 March 2012 Keywords: Air conditioning Heat island mitigation Urban heat island killer'', is exacerbated in urban areas owing to the heat island effect. Air conditioning (A/C) is a key

Ribes, Aurélien

255

Island biogeography Much of our current understanding of how many species occupy a community comes from  

E-Print Network [OSTI]

a balance between ongoing immigration of new species to the island and continuous extinction of species') and E is the maximum rate of extinction (the rate of extinction when the number of species on the island there are no species on the island (logically). But extinction rate increases with increasing species on the island

Creel, Scott

256

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

257

Aleutian Pribilof Islands Wind Energy Feasibility Study  

SciTech Connect (OSTI)

Under this project, the Aleutian Pribilof Islands Association (APIA) conducted wind feasibility studies for Adak, False Pass, Nikolski, Sand Point and St. George. The DOE funds were also be used to continue APIA's role as project coordinator, to expand the communication network quality between all participants and with other wind interest groups in the state and to provide continued education and training opportunities for regional participants. This DOE project began 09/01/2005. We completed the economic and technical feasibility studies for Adak. These were funded by the Alaska Energy Authority. Both wind and hydro appear to be viable renewable energy options for Adak. In False Pass the wind resource is generally good but the site has high turbulence. This would require special care with turbine selection and operations. False Pass may be more suitable for a tidal project. APIA is funded to complete a False Pass tidal feasibility study in 2012. Nikolski has superb potential for wind power development with Class 7 wind power density, moderate wind shear, bi-directional winds and low turbulence. APIA secured nearly $1M from the United States Department of Agriculture Rural Utilities Service Assistance to Rural Communities with Extremely High Energy Costs to install a 65kW wind turbine. The measured average power density and wind speed at Sand Point measured at 20m (66ft), are 424 W/m2 and 6.7 m/s (14.9 mph) respectively. Two 500kW Vestas turbines were installed and when fully integrated in 2012 are expected to provide a cost effective and clean source of electricity, reduce overall diesel fuel consumption estimated at 130,000 gallons/year and decrease air emissions associated with the consumption of diesel fuel. St. George Island has a Class 7 wind resource, which is superior for wind power development. The current strategy, led by Alaska Energy Authority, is to upgrade the St. George electrical distribution system and power plant. Avian studies in Nikolski and Sand Point have allowed for proper wind turbine siting without killing birds, especially endangered species and bald eagles. APIA continues coordinating and looking for funding opportunities for regional renewable energy projects. An important goal for APIA has been, and will continue to be, to involve community members with renewable energy projects and energy conservation efforts.

Bruce A. Wright

2012-03-27T23:59:59.000Z

258

Temporal Variation in Fish Communities Off Santa Cruz Island, California  

E-Print Network [OSTI]

at sub-tidal reefs and kelp beds at Santa Cruz Island in theand/or by the loss of giant kelp, which occurs during warm-diminishing the extent of giant kelp beds. Student Michelle

Larson, Ralph

2008-01-01T23:59:59.000Z

259

A Simple Technique for Islanding Detection with Negligible Nondetection Zone  

E-Print Network [OSTI]

Although active islanding detection techniques have smaller nondetection zones than passive techniques, active methods could degrade the system power quality and are not as simple and easy to implement as passive methods. ...

Kirtley Jr, James L.

260

Rules and Regulations for Sewage Sludge Management (Rhode Island)  

Broader source: Energy.gov [DOE]

The purpose of these rules and regulations is to ensure that sewage sludge that is treated, land applied, disposed, distributed, stockpiled or transported in the State of Rhode Island is done so in...

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

HEALTH EFFECTS OF THE NUCLEAR ACCIDENT AT THREE MILE ISLAND  

E-Print Network [OSTI]

occurred during the nuclear accident, and probably noHEALTH EFFECTS OF THE NUCLEAR ACCIDENT AT MILE ISLAND JacobENG-48 HEALTH EFFECTS OF THE NUCLEAR ACCIDENT A T THREE MILE

Fabrikant, J.I.

2010-01-01T23:59:59.000Z

262

THE UNIVERSITY OF RHODE ISLAND FRINGE BENEFIT AVERAGE RATE  

E-Print Network [OSTI]

THE UNIVERSITY OF RHODE ISLAND FRINGE BENEFIT AVERAGE RATE FY 2015 Allocation Cost or Classified.2% URI Budget & Financial Planning Office 9.17.14 Office:fringebenefits:office of sponsored projects: FY2015 Allocation #12;

Rhode Island, University of

263

FISH AND WILDLIFE SERVICE Pacific Islands Fish and Wildlife Office  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

the Interior FISH AND WILDLIFE SERVICE Pacific Islands Fish and Wildlife Office 300 Ala Moana Boulevard, Room 3-122, Box 50088 Honolulu, Hawaii 96850 In Reply Refer To: 20 lO-F...

264

Quaternary morphology and paleoenvironmental records of carbonate islands  

E-Print Network [OSTI]

Here I use a simple numerical model of reef profile evolution to show that the present-day morphology of carbonate islands has developed largely in response to late Pleistocene sea level oscillations in addition to variable ...

Toomey, Michael (Michael Ryan)

2014-01-01T23:59:59.000Z

265

Demonstration of Black Liquor Gasification at Big Island  

SciTech Connect (OSTI)

This Final Technical Report provides an account of the project for the demonstration of Black Liquor Gasification at Georgia-Pacific LLC's Big Island, VA facility. This report covers the period from May 5, 2000 through November 30, 2006.

Robert DeCarrera

2007-04-14T23:59:59.000Z

266

Distribution, Growth, and Disturbance of Catalina Island Rhodoliths  

E-Print Network [OSTI]

seasonality. Sedimentology 41: 963-984 Friewald A (1998)Godinez-Orta L (2006) Sedimentology and acoustic mapping ofIsland, New Zealand. Sedimentology 55: 249-274 Orth RJ (

Tompkins, Paul Anthony

2011-01-01T23:59:59.000Z

267

Quantitative analysis of forest island pattern in selected Ohio landscapes  

SciTech Connect (OSTI)

The purpose of this study was to quantitatively describe the various aspects of regional distribution patterns of forest islands and relate those patterns to other landscape features. Several maps showing the forest cover of various counties in Ohio were selected as representative examples of forest patterns to be quantified. Ten thousand hectare study areas (landscapes) were delineated on each map. A total of 15 landscapes representing a wide variety of forest island patterns was chosen. Data were converted into a series of continuous variables which contained information pertinent to the sizes, shape, numbers, and spacing of woodlots within a landscape. The continuous variables were used in a factor analysis to describe the variation among landscapes in terms of forest island pattern. The results showed that forest island patterns are related to topography and other environmental features correlated with topography.

Bowen, G.W.; Burgess, R.L.

1981-07-01T23:59:59.000Z

268

First Regional Super ESPC a Success on Kodiak Island, Alaska...  

Broader source: Energy.gov (indexed) [DOE]

at Kodiak Island helped pave the way for additional Super ESPC projects at other agencies. "For these projects to be successful, the agency needs to be committed at the site...

269

Qualifying RPS Market States (Prince Edward Island, Canada)  

Broader source: Energy.gov [DOE]

This entry lists the states with RPS policies that accept generation located in Prince Edward Island, Canada as eligible sources towards their Renewable Portfolio Standard targets or goals. For...

270

assateague island national: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

OF THE DEPARTMENT OF VERTEBRATE ZOOLOGY NATIONAL MUSEUM OF NATURAL surveys of the Marshall and Marianas Islands by L. P. Schultz and colleagues. Vic went on to exceed all...

271

aeolian islands italy: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

de 14 Natural Hazards and Earth System Sciences Tsunami generation in Stromboli island and impact on the CiteSeer Summary: Abstract. Stromboli is one of the most active...

272

46 Various stories from life on Hebert Island (part 1)  

E-Print Network [OSTI]

last updated on Monday, 4 April 2011 Accession Form for Individual Recordings: Collection / Collector Name Stephen Leonard Tape No. / Track / Item No. 46 Length of track 1 hour 53 minutes Title of track Various stories from life on Hebert Island...

Leonard, Stephen Pax

273

47 Various stories from life on Hebert Island (part 2)  

E-Print Network [OSTI]

last updated on Monday, 4 April 2011 Accession Form for Individual Recordings: Collection / Collector Name Stephen Leonard Tape No. / Track / Item No. 48 Length of track 2 hour 2 minutes Title of track Various stories from life on Hebert Island...

Leonard, Stephen Pax

274

Visual Modeling for Aqua Ventus I off Monhegan Island, ME  

SciTech Connect (OSTI)

To assist the University of Maine in demonstrating a clear pathway to project completion, PNNL has developed visualization models of the Aqua Ventus I project that accurately depict the Aqua Ventus I turbines from various points on Monhegain Island, ME and the surrounding area. With a hub height of 100 meters, the Aqua Ventus I turbines are large and may be seen from many areas on Monhegan Island, potentially disrupting important viewsheds. By developing these visualization models, which consist of actual photographs taken from Monhegan Island and the surrounding area with the Aqua Ventus I turbines superimposed within each photograph, PNNL intends to support the project’s siting and permitting process by providing the Monhegan Island community and various other stakeholders with a probable glimpse of how the Aqua Ventus I project will appear.

Hanna, Luke A.; Whiting, Jonathan M.; Copping, Andrea E.

2013-11-27T23:59:59.000Z

275

Renewable Energy and Inter-Island Power Transmission (Presentation)  

SciTech Connect (OSTI)

This presentation summarizes recent findings pertaining to inter-island connection of renewable and other energy sources, in particular, as these findings relate cable options, routing, specifications, and pros and cons.

Gevorgian, V.

2011-05-01T23:59:59.000Z

276

Rules and Regulations for Groundwater Quality (Rhode Island)  

Broader source: Energy.gov [DOE]

These regulations provide standards for groundwater quality in the state of Rhode Island. The rules are intended to protect and restore the quality of the state's groundwater resources for use as...

277

Solar Water Heater Rebate Program (U.S. Virgin Islands)  

Broader source: Energy.gov [DOE]

The Virgin Islands Energy Office currently offers rebates to residents for purchasing solar water heaters from local vendors. The program will cover residential, solar water heaters of 120 gallons...

278

Amchitka Island, Alaska, Biological Monitoring Report 2011 Sampling Results  

SciTech Connect (OSTI)

The Long-Term Surveillance and Maintenance (LTS&M) Plan for the U.S. Department of Energy (DOE) Office of Legacy Management (LM) Amchitka Island sites describes how LM plans to conduct its mission to protect human health and the environment at the three nuclear test sites located on Amchitka Island, Alaska. Amchitka Island, near the western end of the Aleutian Islands, is approximately 1,340 miles west-southwest of Anchorage, Alaska. Amchitka is part of the Aleutian Island Unit of the Alaska Maritime National Wildlife Refuge, which is administered by the U.S. Fish and Wildlife Service (USFWS). Since World War II, Amchitka has been used by multiple U.S. government agencies for various military and research activities. From 1943 to 1950, it was used as a forward air base for the U.S. Armed Forces. During the middle 1960s and early 1970s, the U.S. Department of Defense (DOD) and the U.S. Atomic Energy Commission (AEC) used a portion of the island as a site for underground nuclear tests. During the late 1980s and early 1990s, the U.S. Navy constructed and operated a radar station on the island. Three underground nuclear tests were conducted on Amchitka Island. DOD, in conjunction with AEC, conducted the first nuclear test (named Long Shot) in 1965 to provide data that would improve the United States' capability of detecting underground nuclear explosions. The second nuclear test (Milrow) was a weapons-related test conducted by AEC in 1969 as a means to study the feasibility of detonating a much larger device. Cannikin, the third nuclear test on Amchitka, was a weapons-related test detonated on November 6, 1971. With the exception of small concentrations of tritium detected in surface water shortly after the Long Shot test, radioactive fission products from the tests remain in the subsurface at each test location As a continuation of the environmental monitoring that has taken place on Amchitka Island since before 1965, LM in the summer of 2011 collected biological and seawater samples from the marine and terrestrial environment of Amchitka Island adjacent to the three detonation sites and at a background or reference site, Adak Island, 180 miles to the east. Consistent with the goals of the Amchitka LTS&M Plan, four data quality objectives (DQOs) were developed for the 2011 sampling event.

None

2013-09-01T23:59:59.000Z

279

A wave refraction analysis for an axially symmetrical island  

E-Print Network [OSTI]

A WAVE REFRACTION ANALYSIS FOR AN AXIALLY SYMMETRICAL ISLAND A Thesis By LIEUTENANT RONALD J FORST UNITED STATES NAVY Submitted to the Graduate College of the Texas A&M University in partial fulfillment of the requirements for the degree... of MASTER OF SCIENCE l966 Major Subject Oceanography A WAVE REFRACTION ANALYSIS FOR AN AXIALLY SYMMETRICAL ISLAND A Thesis By LIEUTENANT RONALD J FORST UNITED STATES NAVY Approved as to style and content by; ( airma Committee) Head of Dep rtme t...

Forst, Ronald John

1966-01-01T23:59:59.000Z

280

Tsunami response at Wake Island: azimuthal mode analysis  

E-Print Network [OSTI]

TSUNAMI RESPONSE AT WAKE ISLAND: AZIMUTIIAL MODE ANALYSIS A Thesis by WILTIE AUSTIN CRESWELL III Submitted to the Graduate College of Texas AkM University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE... December 1987 Major Subject: Oceanography TSUNAMI RESPONSE AT WAKE ISLAND: AZIMUTHAL MODE ANALYSIS A Thesis by WILTIE AUSTIN CRESWELL III Approved as to style and content by: Andrew C. Vastano (Chairman of Committee) Robert O. Reid (Member) Guy...

Creswell, Wiltie Austin

1987-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells  

SciTech Connect (OSTI)

In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-01-07T23:59:59.000Z

282

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

283

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

284

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

285

An updated dose assessment for Rongelap Island  

SciTech Connect (OSTI)

We have updated the radiological dose assessment for Rongelap Island at Rongelap Atoll using data generated from field trips to the atoll during 1986 through 1993. The data base used for this dose assessment is ten fold greater than that available for the 1982 assessment. Details of each data base are presented along with details about the methods used to calculate the dose from each exposure pathway. The doses are calculated for a resettlement date of January 1, 1995. The maximum annual effective dose is 0.26 mSv y{sup {minus}1} (26 mrem y{sup {minus}1}). The estimated 30-, 50-, and 70-y integral effective doses are 0.0059 Sv (0.59 rem), 0.0082 Sv (0.82 rem), and 0.0097 Sv (0.97 rem), respectively. More than 95% of these estimated doses are due to 137-Cesium ({sup 137}Cs). About 1.5% of the estimated dose is contributed by 90-Strontium ({sup 90}Sr), and about the same amount each by 239+240-Plutonium ({sup 239+240}PU), and 241-Americium ({sup 241}Am).

Robison, W.L.; Conrado, C.L.; Bogen, K.T.

1994-07-01T23:59:59.000Z

286

Cultural contributions to the island of St. John, United States Virgin Islands: underwater historical archaeology at Cruz Bay  

E-Print Network [OSTI]

the seventeenth century, the French, English and Dutch contested the Virgin Islands, realizing their strategic and commercial importance, and Denmark attempted to settle St. Thomas in 1672. The first permanent Danish colony was established in 1717 at Coral Bay...

Marquez, Carmen M

1995-01-01T23:59:59.000Z

287

Amphibians and Reptiles, Luzon Island, Aurora Province and Aurora Memorial National Park, Northern Philippines: New island distribution records  

E-Print Network [OSTI]

We report 35 new amphibian and reptile distribution records for two regions within the southern Sierra Madre Mountain Range, Aurora Province, central Luzon Island, Philippines. Together with results of our previous survey work in Aurora, our new...

Brown, Rafe M.

2011-01-01T23:59:59.000Z

288

Numerical Simulations of Island Effects on Airflow and Weather during the Summer over the Island of Oahu  

E-Print Network [OSTI]

, Honolulu, Hawaii FRANCIS FUJIOKA Pacific Southwest Research Station, USDA Forest Service, Riverside flow from the open ocean is distorted and disrupted by the mountains, hills, and valleys of the islands

Chen, Yi-Leng

289

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

290

Wavelength limits for InGaN quantum wells on GaN  

SciTech Connect (OSTI)

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

2013-06-17T23:59:59.000Z

291

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

1992-01-01T23:59:59.000Z

292

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

1992-08-01T23:59:59.000Z

293

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces  

SciTech Connect (OSTI)

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-08-12T23:59:59.000Z

294

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots  

SciTech Connect (OSTI)

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-15T23:59:59.000Z

295

AlGaAs/GaAs quantum well infrared detectors and modulators  

E-Print Network [OSTI]

to the quantum well. This optical transition wavelength lies in the mid infrared region of the spectrum. To get a more realistic picture of the optical transition in a 1-D quantum well, the non-parabolicity of the conduction band of GaAs is taken... into consideration. Further it is seen that with the change in temperature and doping concentration the width and peak of the absorption curve also changes. Based on the above calculations and results an AIGaAs/GaAs quantum well infrared photodetector...

Dave, Digant Praful

1990-01-01T23:59:59.000Z

296

Textural criteria for the discrimination of water-laid and wind-laid barrier island sands: a North Padre Island, Texas example  

E-Print Network [OSTI]

-Laid Barrier Island Sands: A North Padre Island, Texas Example (August 1985) David Cunningham, B. S. ; The University of Texas at Austin Chairman of Advisory Committee: Dr. James M. Mazzullo The grain size and grain shape characteristics of 63, 200 quartz... sand grains were analyzed from 158 samples systematically collected along three transects across North Padre Island. Sampled subenviron- ments included the forebeach, backbeach, foredune ridge, eolian flat, back-island dunes, and wind-tidal flats...

Cunningham, David

1985-01-01T23:59:59.000Z

297

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

298

Geology and geochemistry of the Geyser Bight Geothermal Area, Umnak Island, Aleutian Islands, Alaska  

SciTech Connect (OSTI)

The Geyser Bight geothermal area is located on Umnak Island in the central Aleutian Islands. It contains one of the hottest and most extensive areas of thermal springs and fumaroles in Alaska, and is only documented site in Alaska with geysers. The zone of hot springs and fumaroles lies at the head of Geyser Creek, 5 km up a broad, flat, alluvial valley from Geyser Bight. At present central Umnak is remote and undeveloped. This report describes results of a combined program of geologic mapping, K-Ar dating, detailed description of hot springs, petrology and geochemistry of volcanic and plutonic rock units, and chemistry of geothermal fluids. Our mapping documents the presence of plutonic rock much closer to the area of hotsprings and fumaroles than previously known, thus increasing the probability that plutonic rock may host the geothermal system. K-Ar dating of 23 samples provides a time framework for the eruptive history of volcanic rocks as well as a plutonic cooling age.

Nye, C.J. (Alaska Univ., Fairbanks, AK (USA). Geophysical Inst. Alaska Dept. of Natural Resources, Fairbanks, AK (USA). Div. of Geological and Geophysical Surveys); Motyka, R.J. (Alaska Dept. of Natural Resources, Juneau, AK (USA). Div. of Geological and Geophysical Surveys); Turner, D.L. (Alaska Univ., Fairbanks, AK (USA). Geophysical Inst.); Liss, S.A. (Alaska Dept. of Natural Resources, Fairba

1990-10-01T23:59:59.000Z

299

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

300

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network [OSTI]

information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

Hyman, Bruce Carl

1999-01-01T23:59:59.000Z

302

General Atomics (GA) | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsorGeneral Atomics (GA)

303

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:

304

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

305

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat  

E-Print Network [OSTI]

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

Shepelyansky, Dima

306

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Broader source: Energy.gov (indexed) [DOE]

current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

307

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

308

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

" FL Water Law Regulated Riparianism "Heavy" Admin Water Law ? #12;Comprehensive Water Resource Study Supply a. Water Allocation ­ Withdrawal Permit Program b. Water Storage & Delivery c. Interbasin TransferThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

309

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

310

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures  

E-Print Network [OSTI]

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

Luryi, Serge

311

Statistics of the Island-Around-Island Hierarchy in Hamiltonian Phase Space  

E-Print Network [OSTI]

The phase space of a typical Hamiltonian system contains both chaotic and regular orbits, mixed in a complex, fractal pattern. One oft-studied phenomenon is the algebraic decay of correlations and recurrence time distributions. For area-preserving maps, this has been attributed to the stickiness of boundary circles, which separate chaotic and regular components. Though such dynamics has been extensively studied, a full understanding depends on many fine details that typically are beyond experimental and numerical resolution. This calls for a statistical approach, the subject of the present work. We calculate the statistics of the boundary circle winding numbers, contrasting the distribution of the elements of their continued fractions to that for uniformly selected irrationals. Since phase space transport is of great interest for dynamics, we compute the distributions of fluxes through island chains. Analytical fits show that the "level" and "class" distributions are distinct, and evidence for their universality is given.

Or Alus; Shmuel Fishman; James D. Meiss

2014-12-10T23:59:59.000Z

312

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

313

Elastic properties of Pu metal and Pu-Ga alloys  

SciTech Connect (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

314

Morphological stability of electromigration-driven vacancy islands  

E-Print Network [OSTI]

The electromigration-induced shape evolution of two-dimensional vacancy islands on a crystal surface is studied using a continuum approach. We consider the regime where mass transport is restricted to terrace diffusion in the interior of the island. In the limit of fast attachment/detachment kinetics a circle translating at constant velocity is a stationary solution of the problem. In contrast to earlier work [O. Pierre-Louis and T.L. Einstein, Phys. Rev. B 62, 13697 (2000)] we show that the circular solution remains linearly stable for arbitrarily large driving forces. The numerical solution of the full nonlinear problem nevertheless reveals a fingering instability at the trailing end of the island, which develops from finite amplitude perturbations and eventually leads to pinch-off. Relaxing the condition of instantaneous attachment/detachment kinetics, we obtain non-circular elongated stationary shapes in an analytic approximation which compares favorably to the full numerical solution.

Frank Hausser; Philipp Kuhn; Joachim Krug; Axel Voigt

2007-02-20T23:59:59.000Z

315

An early Miocene age for a high-temperature event in gneisses from Zabargad Island (Red Sea, Egypt): mantle diapirism?  

E-Print Network [OSTI]

An early Miocene age for a high-temperature event in gneisses from Zabargad Island (Red Sea, Egypt outcropping on Zabargad Island (Red Sea, Egypt). This island, though of limited size (& 4 km2 ), has an almost

Demouchy, Sylvie

316

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

317

Remedial Action Work Plan Amchitka Island Mud Pit Closures  

SciTech Connect (OSTI)

This remedial action work plan presents the project organization and construction procedures developed for the performance of the remedial actions at U.S. Department of Energy (DOE's) sites on Amchitka Island, Alaska. During the late1960s and early 1970s, the U.S. Department of Defense and the U.S. Atomic Energy Commission (the predecessor agency to DOE) used Amchitka Island as a site for underground nuclear tests. A total of nine sites on the Island were considered for nuclear testing; however, tests were only conducted at three sites (i.e., Long Shot in 1965, Milrow in 1969, and Cannikin in 1971). In addition to these three sites, large diameter emplacement holes were drilled in two other locations (Sites D and F) and an exploratory hole was in a third location (Site E). It was estimated that approximately 195 acres were disturbed by drilling or preparation for drilling in conjunction with these activities. The disturbed areas include access roads, spoil-disposal areas, mud pits which have impacted the environment, and an underground storage tank at the hot mix plant which was used to support asphalt-paving operations on the island. The remedial action objective for Amchitka Island is to eliminate human and ecological exposure to contaminants by capping drilling mud pits, removing the tank contents, and closing the tank in place. The remedial actions will meet State of Alaska regulations, U.S. Fish and Wildlife Service refuge management goals, address stakeholder concerns, and address the cultural beliefs and practices of the native people. The U.S. Department of Energy, Nevada Operations Office will conduct work on Amchitka Island under the authority of the Comprehensive Emergency Response, Compensation, and Liability Act. Field activities are scheduled to take place May through September 2001. The results of these activities will be presented in a subsequent Closure Report.

DOE/NV

2001-04-05T23:59:59.000Z

318

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach  

E-Print Network [OSTI]

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

Itoh, Tatsuo

319

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

320

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network [OSTI]

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

322

Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip  

E-Print Network [OSTI]

by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsÕAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving

Hohls, Frank

323

OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT  

E-Print Network [OSTI]

on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

Honsberg, Christiana

324

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

325

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

326

Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study  

E-Print Network [OSTI]

Diffusion of a Ga adatom on the GaAs(001)c(4×4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features

Khare, Sanjay V.

327

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields  

E-Print Network [OSTI]

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. © 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has

Demir, Hilmi Volkan

328

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a)  

E-Print Network [OSTI]

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a) M. Patrini,1 G; accepted 5 May 2011; published online 20 June 2011) The effect of hydrogen irradiation on the optical for fiber optic communications. These promising results in view of the development of waveguides deserve

329

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

330

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network [OSTI]

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

331

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers  

E-Print Network [OSTI]

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

Wetzel, Christian M.

332

Energy Department Helps Advance Island Clean Energy Goals (Fact Sheet)  

SciTech Connect (OSTI)

This U.S. Department of Energy (DOE) Office of Energy Efficiency and Renewable Energy (EERE) fact sheet highlights a June 2012 solar power purchase agreement between the Virgin Islands Water and Power Authority and three corporations. The fact sheet describes how financial support from DOE and technical assistance from DOE's National Renewable Energy Laboratory enabled the U.S. Virgin Islands to realistically assess its clean energy resources and identify the most viable and cost-effective solutions to its energy challenges--resulting in a $65 million investment in solar energy in the territory.

Not Available

2012-10-01T23:59:59.000Z

333

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings  

SciTech Connect (OSTI)

The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-28T23:59:59.000Z

334

Single photon emission from site-controlled InGaN/GaN quantum dots  

SciTech Connect (OSTI)

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2013-11-04T23:59:59.000Z

335

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

336

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

337

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

338

Wind turbine generator interaction with conventional diesel generators on Block Island, Rhode Island. Volume 1. Executive summary  

SciTech Connect (OSTI)

This report summarizes the primary results of a three-part study involving the effects of connecting a MOD-OA wind turbine generator to an isolated diesel power system. The subject utility is that owned and operated by the Block Island Power Company (BIPCO). The MOD-OA installation here was the third of four experimental nominal 200 kW wind turbines connected to various utilities under the Federal Wind Energy Program. The BIPCO installation was characterized by the highest wind energy penetration levels of four sites and, as such, was adjudged the best candidate for conducting the data acquisition and analysis effort that is the subject of this study. The three-phases of the study analysis address: (1) fuel displacement, (2) dynamic interaction, and (3) three modes of reactive power control. These analyses all have as their basis the results of the data acquisition program conducted during 1982 from February into April on Block Island, Rhode Island.

Wilreker, V.F.; Stiller, P.H.; Scott, G.W.; Kruse, V.J.; Smith, R.F.

1984-02-01T23:59:59.000Z

339

Wind turbine generator interaction with conventional diesel generators on Block Island, Rhode Island. Volume II. Data analysis  

SciTech Connect (OSTI)

In order to assess the performance of a MOD-OA horizontal axis wind turbine when connected to an isolated diesel utility, a comprehensive data measurement program was conducted on the Block Island Power Company installation on Block Island, Rhode Island. This report presents the detailed results of that program focusing on three principal areas of (1) fuel displacement (savings), (2) dynamic interaction between the diesel utility and the wind turbine, (3) effects of three modes of wind turbine reactive power control. The approximate two month duration of the data acquisition program conducted in the winter months (February into April 1982) revealed performance during periods of highest wind energy penetration and hence severity of operation. It is concluded that even under such conditions fuel savings were significant resulting in a fuel reduction of 6.7% while the MOD-OA was generating 10.7% of the total electrical energy. Also, electrical disturbance and interactive effects were of an acceptable level.

Wilreker, V.F.; Stiller, P.H.; Scott, G.W.; Kruse, V.J.; Smith, R.F.

1984-02-01T23:59:59.000Z

340

E-Print Network 3.0 - aleutian islands alaska Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bering Sea and Aleutian Islands skates Olav Ormseth, Beth Matta, and Jerry Hoff Summary: 18a. Bering Sea and Aleutian Islands skates Olav Ormseth, Beth Matta, and Jerry Hoff NMFS...

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

E-Print Network 3.0 - asian pacific islanders Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Asian or Pacific Islander, you need to select a new category If you are a nonresident alien... or Other Pacific Islander (A person having origins in any of the original peoples...

342

Two-fluid magnetic island dynamics in slab geometry Richard Fitzpatrick  

E-Print Network [OSTI]

. Moreover, the island propaga- tion velocity is uniquely specified by the condition that there be zero net determination of the island propagation velocity, and the calculation of the ion and electron fluid flow

Fitzpatrick, Richard

343

The Rhode Island state house--the competition (1890-1892)  

E-Print Network [OSTI]

This is a study of the design competition for the new State House in Providence, Rhode Island, which began in 1890 and ended in 1892. The competition was supervised by the Rhode Island State House Commission, a body formed ...

Lewis, Hilary A. (Hilary Ann)

1988-01-01T23:59:59.000Z

344

E-Print Network 3.0 - area north island Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Madison Collection: Environmental Sciences and Ecology ; Biology and Medicine 56 Island wakes in the Southern California Bight R. M. A. Caldeira,1,2 Summary: north of the island...

345

Working Groups Collaborate on U.S. Virgin Islands Clean Energy...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Working Groups Collaborate on U.S. Virgin Islands Clean Energy Vision and Road Map Working Groups Collaborate on U.S. Virgin Islands Clean Energy Vision and Road Map A diverse set...

346

E-Print Network 3.0 - ammassalik island se Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

To assess the likely extent of Delta island... and repair decisions for 34 major subsided agricultural islands that make up most of the Delta's Primary Zone... and include all...

347

Modeling Microgrid Islanding Problems as DCOPs Saurabh Gupta, William Yeoh, Enrico Pontelli  

E-Print Network [OSTI]

, we formulate the microgrid islanding problem as distributed constraint optimization problem (DCOP. Index Terms--Microgrid, Islanding, Distributed Constraint Optimization. I. INTRODUCTION Every year residential and commercial facilities with controllable loads and distributed generation sources; loads

Yeoh, William

348

E-Print Network 3.0 - amsterdam island southeastern Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

on Amsterdam Island 189 iv 12;Rapporteurs' Reports Trillmich... Shelf near Kodiak Island, Alaska, by Arthur W. Kendall, Jr., and Jean R. Dunn. January 1985, 89 p. 21... of...

349

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well  

SciTech Connect (OSTI)

The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.

Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

2010-06-15T23:59:59.000Z

350

Long Island Smart Metering Pilot Project  

SciTech Connect (OSTI)

The Long Island Power Authority (LIPA) Smart Meter Pilots provided invaluable information and experience for future deployments of Advanced Metering Infrastructure (AMI), including the deployment planned as part of LIPAâ??s Smart Grid Demonstration Project (DE-OE0000220). LIPA will incorporate lessons learned from this pilot in future deployments, including lessons relating to equipment performance specifications and testing, as well as equipment deployment and tracking issues. LIPA ultimately deployed three AMI technologies instead of the two that were originally contemplated. This enabled LIPA to evaluate multiple systems in field conditions with a relatively small number of meter installations. LIPA experienced a number of equipment and software issues that it did not anticipate, including issues relating to equipment integration, ability to upgrade firmware and software â??over the airâ? (as opposed to physically interacting with every meter), and logistical challenges associated with tracking inventory and upgrade status of deployed meters. In addition to evaluating the technology, LIPA also piloted new Time-of-Use (TOU) rates to assess customer acceptance of time-differentiated pricing and to evaluate whether customers would respond by adjusting their activities from peak to non-peak periods. LIPA developed a marketing program to educate customers who received AMI in the pilot areas and to seek voluntary participation in TOU pricing. LIPA also guaranteed participating customers that, for their initial year on the rates, their electricity costs under the TOU rate would not exceed the amount they would have paid under the flat rates they would otherwise enjoy. 62 residential customers chose to participate in the TOU rates, and every one of them saved money during the first year. 61 of them also elected to stay on the TOU rate â?? without the cost guarantee â?? at the end of that year. The customer who chose not to continue on the rate was also the one who achieved the greatest savings. However, after the first year, the customer in question installed equipment that would have made TOU rates a more costly option than the residential flat rate. During the second year, all but one customer saved money. That customer increased usage during peak hours, and as a result saw an increase in annual costs (as compared to the flat rate) of $24.17. The results were less clear for commercial customers, which LIPA attributes to rate design issues that it will take into account for future deployments. LIPA views this pilot as a complete success. Not only is LIPA better prepared for a larger deployment of AMI, but it is confident that residential customers will accept AMI and TOU rates and shift their energy consumption from peak to non-peak periods in response to pricing. On a larger scale, this will benefit LIPA and all of its customers by potentially lowering peak demand when energy costs are highest.

None

2012-03-30T23:59:59.000Z

351

Kauai Island Utility Cooperative energy storage study.  

SciTech Connect (OSTI)

Sandia National Laboratories performed an assessment of the benefits of energy storage for the Kauai Island Utility Cooperative. This report documents the methodology and results of this study from a generation and production-side benefits perspective only. The KIUC energy storage study focused on the economic impact of using energy storage to shave the system peak, which reduces generator run time and consequently reduces fuel and operation and maintenance (O&M) costs. It was determined that a 16-MWh energy storage system would suit KIUC's needs, taking into account the size of the 13 individual generation units in the KIUC system and a system peak of 78 MW. The analysis shows that an energy storage system substantially reduces the run time of Units D1, D2, D3, and D5 - the four smallest and oldest diesel generators at the Port Allen generating plant. The availability of stored energy also evens the diurnal variability of the remaining generation units during the off- and on-peak periods. However, the net economic benefit is insufficient to justify a load-leveling type of energy storage system at this time. While the presence of storage helps reduce the run time of the smaller and older units, the economic dispatch changes and the largest most efficient unit in the KIUC system, the 27.5-MW steam-injected combustion turbine at Kapaia, is run for extra hours to provide the recharge energy for the storage system. The economic benefits of the storage is significantly reduced because the charging energy for the storage is derived from the same fuel source as the peak generation source it displaces. This situation would be substantially different if there were a renewable energy source available to charge the storage. Especially, if there is a wind generation resource introduced in the KIUC system, there may be a potential of capturing the load-leveling benefits as well as using the storage to dampen the dynamic instability that the wind generation could introduce into the KIUC grid. General Electric is presently conducting such a study and results of this study will be available in the near future. Another study conducted by Electric Power Systems, Inc. (EPS) in May 2006 took a broader approach to determine the causes of KIUC system outages. This study concluded that energy storage with batteries will provide stability benefits and possibly eliminate the load shedding while also providing positive voltage control. Due to the lack of fuel diversity in the KIUC generation mix, SNL recommends that KIUC continue its efforts to quantify the dynamic benefits of storage. The value of the dynamic benefits, especially as an enabler of renewable generation such as wind energy, may be far greater than the production cost benefits alone. A combination of these benefits may provide KIUC sufficient positive economic and operational benefits to implement an energy storage project that will contribute to the overall enhancement of the KIUC system.

Akhil, Abbas Ali; Yamane, Mike (Kauai Island Utility Cooperative, Lihu'e, HI); Murray, Aaron T.

2009-06-01T23:59:59.000Z

352

Tourists: their expectations, motivations, and behavior at South Padre Island, Texas  

E-Print Network [OSTI]

of South Padre Island and City of Port Isabel 36 7 Estimated Actual Value of Taxable Property: Town of South Padre Island 37 8 Statement of Construction Value and Bank Deposits: Town of South Padre Island... degrees F and the winter averages 65 degrees F. Such warm temperatures allow an extremely long growing season of 336 days (Port Isabel ? South Padre Island Chamber of Commerce, 1982). Only 26 inches ot preciptation falls annually, mostly during...

Myers, Steven John

1983-01-01T23:59:59.000Z

353

Independent Verification Survey Report for the Long Island Solar Farm, Brookhaven National Laboratory, Upton, New York  

SciTech Connect (OSTI)

5119-SR-01-0 INDEPENDENT VERIFICATION SURVEY REPORT FOR THE LONG ISLAND SOLAR FARM, BROOKHAVEN NATIONAL LABORATORY

E.M. Harpenau

2010-11-15T23:59:59.000Z

354

Biological control of Chromolaena odorata in the American Pacific Micronesian Islands  

E-Print Network [OSTI]

) and in the Majuro (2001) and Bikini (2005) in the Marshalls islands. In 1983, it became a dominant weed along

Reddy, Gadi VP

355

Model Order Reductions for Stability Analysis of Islanded Microgrids with Droop Control  

E-Print Network [OSTI]

1 Model Order Reductions for Stability Analysis of Islanded Microgrids with Droop Control V, IEEE Abstract--Three-phase inverters subject to droop control are widely used in islanded microgrids. In this paper, a mathematical model for islanded microgrids with linear loads and inverters under frequency

Vasquez, Juan Carlos

356

Hard-and software implementation and verification of an Islanded House  

E-Print Network [OSTI]

Islanded House. Simulations showed that the discomfort can be decreased when also a battery is addedHard- and software implementation and verification of an Islanded House prototype Albert Molderink conclude that it is possible to create an Islanded House and to decrease the discomfort significantly

Al Hanbali, Ahmad

357

Supersonic drift-tearing magnetic islands in tokamak plasmas R. Fitzpatrick, and F.L. Waelbroeck  

E-Print Network [OSTI]

by the plasma. Since the waves carry momentum, the inner region exerts a net force on the outer region, and vice the radial direc- tion) helical magnetic islands.3 Such islands degrade plasma confinement because heat weak coupling to drift-acoustic waves.13­16 On the other hand, supersonic island solutions

Fitzpatrick, Richard

358

FEEDING ORIENTED MOVEMENTS OF THE ATHERINID FISH PRANESUS PINGUIS AT MAJURO ATOLL, MARSHALL ISLANDS  

E-Print Network [OSTI]

FEEDING ORIENTED MOVEMENTS OF THE ATHERINID FISH PRANESUS PINGUIS AT MAJURO ATOLL, MARSHALL ISLANDS was studied in the lagoon at Majuro Atoll, Marshall Islands, during March 1972. During the day, individuals' 06' oe' 10' 12' 14' 16' Ie' 20' 22' 24' FIGURE I.-Majuro Atoll, Marshall Islands, showing Arniel

359

TIMES model for the Reunion Island: addressing reliability of electricity supply  

E-Print Network [OSTI]

, the Reunion Island was highly dependent on fossil fuel imports (86.5%). This paper focuses on the target of small islands, the Reunion Island was highly dependent on fossil fuel imports (86.5%). This paper designs and appropriate levels of incentives and subsidies are already difficult issues to deal

Paris-Sud XI, Université de

360

Charge transport through a SET with a mechanically oscillating island N. M. Chtchelkatchev,1, 2, 3  

E-Print Network [OSTI]

the deviation of the island from its equilibrium position. (b) Equivalent circuit of the device on the mechanical displacement, thus, the vibrations of the island may influence the transport properties. Harmonic oscillations of the island and thermal vibrations change the transport characteristics in different ways

Bruder, Christoph

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Droop Control for Islanded Microgrids Hemanshu R Pota  

E-Print Network [OSTI]

1 Droop Control for Islanded Microgrids Hemanshu R Pota School of Engineering & IT, UNSW microgrid. As the load within the microgrid changes, the inverter-sourced generators will share this change. For a microgrid modelled as a collection of ideal voltage sources only the controller and sensor dynamics interact

Pota, Himanshu Roy

362

Gilbert M. Smith, master boatbuilder of Long Island, New York  

E-Print Network [OSTI]

The second half of the 19th century in maritime America was an era marked by a rich variety of vernacular watercraft types adapted to a wide range of local needs and traditions. The Great South Bay, located off Long Island, New York, was home...

Merwin, Daria Elizabeth

2000-01-01T23:59:59.000Z

363

Air Quality and Emissions Impacts of Heat Island Mitigation Strategies  

E-Print Network [OSTI]

Air Quality and Emissions Impacts of Heat Island Mitigation Strategies ENVIRONMENTAL AREA RESEARCH the temperature of the ground surface and the ambient air. This situation creates areas called urban heat summertime temperatures reduces electricity demand for air conditioning, which lowers air pollution levels

364

Modeling of magnetic island formation in magnetic reconnection experiment  

E-Print Network [OSTI]

. In the cohelicity injection with a mean toroidal field, the growing process of the island into a spheromak coalescence of spheromaks,5 where two types of operation mode have been pursued. One is a cohelicity merging using two identical spheromaks. The another one is a counterhelicity merging where toroidal fields

Ji, Hantao

365

Recommendations for Technologies for Microgrids on the Big Island  

E-Print Network [OSTI]

and Energy Storage Studies 1 2.2 HNEI Sustainable Energy Study 3 3.0 Changes in Big Island Loads), and Hawaiian Electric Company (HECO) looked at the potential benefits of microgrids and energy storage of Energy Office of Electricity Delivery and Energy Reliability Under Award No. DE-FC-06NT42847 Subtask 2

366

renewable energy from waste 1730 RHODE ISLAND AVENUE, NW  

E-Print Network [OSTI]

renewable energy from waste 1730 RHODE ISLAND AVENUE, NW SUITE 700 WASHINGTON, DC 20036 WWW Energy and Security Act of 2009 that was released as a discussion draft on March 31. While waste-to-energy gas reductions and renewable energy provided by waste-to-energy and if it implemented policies

Columbia University

367

University of Rhode Island inAdvance March 29, 2007  

E-Print Network [OSTI]

University of Rhode Island inAdvance March 29, 2007 Volume 4, Issue 7 Is today your lucky day? If you renew your membership in (or join) the URI Alumni Association before April 6, your name: Two season tickets for the 2007-2008 URI Men's Basketball home games; two season tickets for the 2007

Rhode Island, University of

368

University of Rhode Island inAdvance March 31, 2005  

E-Print Network [OSTI]

. To protect your privacy, log in is required. Thank you for taking the time to vote! Please URI first public family to their newly built home The URI College of Human Science and Services and South County HabitatUniversity of Rhode Island inAdvance March 31, 2005 Volume 2, Issue 7 There's no place like home

Rhode Island, University of

369

Sustainable Development and Kish Island Environment Protection, using Wind Energy  

E-Print Network [OSTI]

Abstract—Kish Islands in South of Iran is located in coastal water near Hormozgan Province. Based on the wind 3-hour statistics in Kish station, the mean annual windspeed in this Island is 8.6 knot (4.3 m/s). The maximum windspeed recorded in this stations 47 knot (23.5 m/s). In 45.7 percent of recorded times, windspeed has been Zero or less than 8 knot which is not suitable to use the wind energy. But in 54.3 percent of recorded times, windspeed has been more than 8 knot and suitable to use wind energy to run turbines. In 40.2 percent of recorded times, windspeed has been between 8 to 16 knot, in 13 percent of times between 16 to 24 knot and in 1 percent of times it has been higher than 24 knot. In this station, the direction of winds higher than 8 is west and wind direction in Kish station is stable in most times of the year.With regard to high – speed and stable direction winds during the year and also shallow coasts near this is land, it is possible to build offshore wind farms near Kish Island and utilize wind energy produce the electricity required in this Island during most of the year.

Amir Gandomkar

370

Virgin Islands Water Resources Research Institute Annual Technical Report  

E-Print Network [OSTI]

to be a concern, though recently, major improvements have been made in the wastewater collection and treatment of the utility of an irrigation strategy, modeling of a possible impact of climate change, quantification of water for the islands' limited public water distribution systems. Wastewater disposal continues

371

For Immediate Release Contact: Islamorada, Village of Islands Anita Muxo  

E-Print Network [OSTI]

-664-6426 anita.muxo@islamorada.fl.us RELEASE ISLAMORADA, VILLAGE OF ISLANDS SEWER CONNECTION SUBSIDY PROGRAM-restricted affordable housing with the costs of connecting to the Village's wastewater collection system. Through to the Village wastewater collection system but have not yet connected to the system. The Sewer Connection

Florida, University of

372

THE RETICULATING PHYLOGENY OF ISLAND BIOGEOGRAPHY Mark V. Lomolino  

E-Print Network [OSTI]

THE RETICULATING PHYLOGENY OF ISLAND BIOGEOGRAPHY THEORY Mark V. Lomolino Department in the geographic variation of life, from the spatial variation in genetic and physiological characteristics and paradigms, but rather in fits and starts through a reticulating phylogeny of ideas and alternating periods

Brown, James H.

373

Northern Marshall Islands radiological survey: sampling and analysis summary  

SciTech Connect (OSTI)

A radiological survey was conducted in the Northern Marshall Islands to document reamining external gamma exposures from nuclear tests conducted at Enewetak and Bikini Atolls. An additional program was later included to obtain terrestrial and marine samples for radiological dose assessment for current or potential atoll inhabitants. This report is the first of a series summarizing the results from the terrestrial and marine surveys. The sample collection and processing procedures and the general survey methodology are discussed; a summary of the collected samples and radionuclide analyses is presented. Over 5400 samples were collected from the 12 atolls and 2 islands and prepared for analysis including 3093 soil, 961 vegetation, 153 animal, 965 fish composite samples (average of 30 fish per sample), 101 clam, 50 lagoon water, 15 cistern water, 17 groundwater, and 85 lagoon sediment samples. A complete breakdown by sample type, atoll, and island is given here. The total number of analyses by radionuclide are 8840 for /sup 241/Am, 6569 for /sup 137/Cs, 4535 for /sup 239 +240/Pu, 4431 for /sup 90/Sr, 1146 for /sup 238/Pu, 269 for /sup 241/Pu, and 114 each for /sup 239/Pu and /sup 240/Pu. A complete breakdown by sample category, atoll or island, and radionuclide is also included.

Robison, W.L.; Conrado, C.L.; Eagle, R.J.; Stuart, M.L.

1981-07-23T23:59:59.000Z

374

Field dependent emission rates in radiation damaged GaAs  

SciTech Connect (OSTI)

We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

2014-07-07T23:59:59.000Z

375

The Northern Marshall Islands radiological survey: Data and dose assessments  

SciTech Connect (OSTI)

Fallout from atmospheric nuclear tests, especially from those conducted at the Pacific Proving Grounds between 1946 and 1958, contaminated areas of the Northern Marshall Islands. A radiological survey at some Northern Marshall Islands was conducted from September through November 1978 to evaluate the extent of residual radioactive contamination. The atolls included in the Northern Marshall Islands Radiological Survey (NMIRS) were Likiep, Ailuk, Utirik, Wotho, Ujelang, Taka, Rongelap, Rongerik, Bikar, Ailinginae, and Mejit and Jemo Islands. The original test sites, Bikini and Enewetak Atolls, were also visited on the survey. An aerial survey was conducted to determine the external gamma exposure rate. Terrestrial (soil, food crops, animals, and native vegetation), cistern and well water samples, and marine (sediment, seawater, fish and clams) samples were collected to evaluate radionuclide concentrations in the atoll environment. Samples were processed and analyzed for {sup 137}Cs, {sup 90}Sr, {sup 239+240}Pu and {sup 241}Am. The dose from the ingestion pathway was calculated using the radionuclide concentration data and a diet model for local food, marine, and water consumption. The ingestion pathway contributes 70% to 90% of the estimated dose. Approximately 95% of the dose is from {sup 137}Cs accounts for about 10% to 30% of the dose. {sup 239+240}Pu and {sup 241}Am are the major contributors to dose via the inhalation pathway; however, inhalation accounts for only about 1% of the total estimated dose, based on surface soil levels and resuspension studies. All doses are computed for concentrations decay corrected to 1996. The maximum annual effective dose from manmade radionuclides at these atolls ranges from .02 mSv y{sup -1}. The background dose in the Marshall Islands is estimated to be 2.4 mSv y{sup -1} to 4.5 mSv y{sup -1}. The 50-y integral dose ranges from 0.5 to 65 mSv. 35 refs., 2 figs., 9 tabs.

Robison, W.L.; Noshkin, V.E.; Conrado, C.L. [Lawrence Livermore National Lab., CA (United States)] [and others

1997-07-01T23:59:59.000Z

376

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

SciTech Connect (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

377

Preliminary design of a landfill and revetment on Bikini Island, Republic of the Marshall Islands. Final report  

SciTech Connect (OSTI)

Topsoil on Bikini Island, located 2,500 miles southwest of Hawaii at 113 deg 35 min N, 165 deg 25 min E, was contaminated by radioactive fallout from nuclear weapons tests in the late 1940's and early 1950's. The uptake of this radioactive fallout, primarily cesium-137 in plants, has prevented resettlement of the island by the native population. One alternative solution proposed by the congressionally appointed Bikini Atoll Rehabilitation Committee involves removal of the contaminated topsoil and placement of the excavated material as a landfill on the 2,500-ft-wide reef flat adjacent to the eastern (windward) shore of the island. This paper explores that alternative by first developing an extremal wave climatology offshore of Bikini Island from 21 years (1959-1979) of typhoon data published by the Joint Typhoon Warning Center on Guam. Deepwater wave conditions just offshore of the reef are estimated and transformed to the point of breaking at the edge of the reef. Storm surge is estimated based on these same parameters. Wave setup on the reef flat is estimated based on the simulated breaking conditions. Given an estimate of the elevated water level across the reef caused by storm surge and wave setup, depth limitations and fractional decay are estimated to define wave conditions at the toe of the proposed revetment. A rubble-mound revetment design stable in these conditions, armored by coral limestone quarried from the reef flat, is then formulated and corresponding material quantities estimated.

Smith, O.P.; Chu, Y.H.

1987-02-01T23:59:59.000Z

378

Ocean Thermal Resources off the Hawaiian Islands luisvega@hawaii.edu Ocean Thermal Resources off the Hawaiian Islands  

E-Print Network [OSTI]

information to assist developers of ocean thermal energy conversion (OTEC) systems in site selection Energy Conversion The immense size of the ocean thermal resource and the baseload capability of OTECOcean Thermal Resources off the Hawaiian Islands luisvega@hawaii.edu 1 Ocean Thermal Resources off

379

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

380

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs  

SciTech Connect (OSTI)

The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

2013-11-15T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Electrical spin injection using GaCrN in a GaN based spin light emitting diode  

SciTech Connect (OSTI)

We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2013-12-09T23:59:59.000Z

382

Beta-decay branching ratios of 62Ga  

E-Print Network [OSTI]

Beta-decay branching ratios of 62Ga have been measured at the IGISOL facility of the Accelerator Laboratory of the University of Jyvaskyla. 62Ga is one of the heavier Tz = 0, 0+ -> 0+ beta-emitting nuclides used to determine the vector coupling constant of the weak interaction and the Vud quark-mixing matrix element. For part of the experimental studies presented here, the JYFLTRAP facility has been employed to prepare isotopically pure beams of 62Ga. The branching ratio obtained, BR= 99.893(24)%, for the super-allowed branch is in agreement with previous measurements and allows to determine the ft value and the universal Ft value for the super-allowed beta decay of 62Ga.

A. Bey; B. Blank; G. Canchel; C. Dossat; J. Giovinazzo; I. Matea; V. Elomaa; T. Eronen; U. Hager; M. Hakala; A. Jokinen; A. Kankainen; I. Moore; H. Penttila; S. Rinta-Antila; A. Saastamoinen; T. Sonoda; J. Aysto; N. Adimi; G. De France; J. C. Thomas; G. Voltolini; T. Chaventré

2008-04-17T23:59:59.000Z

383

Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot  

SciTech Connect (OSTI)

In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

Emre Kavruk, Ahmet, E-mail: aekavruk@selcuk.edu.tr, E-mail: aekavruk@gmail.com; Koc, Fatih [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Sciences and Nanotechnology Engineering, Abdullah Gul University, Kayseri (Turkey)

2013-11-14T23:59:59.000Z

384

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

385

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

386

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

387

Anti-phase domains in cubic GaN  

SciTech Connect (OSTI)

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.

Maria Kemper, Ricarda; Schupp, Thorsten; Haeberlen, Maik; Lindner, Joerg; Josef As, Donat [University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn (Germany); Niendorf, Thomas; Maier, Hans-Juergen [University of Paderborn, Lehrstuhl fuer Werkstoffkunde, Pohlweg 47-49, D-33098 Paderborn (Germany); Dempewolf, Anja; Bertram, Frank; Christen, Juergen [University of Magdeburg, Institut fuer Festkoerperphysik, P.O. Box 4120, D-39016 Magdeburg (Germany); Kirste, Ronny; Hoffmann, Axel [Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin (Germany)

2011-12-15T23:59:59.000Z

388

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network [OSTI]

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

389

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas  

SciTech Connect (OSTI)

Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

2013-12-23T23:59:59.000Z

390

Atomistic simulation study of misfit strain relaxation mechanisms in heteroepitaxial islands Avinash M. Dongare and Leonid V. Zhigilei  

E-Print Network [OSTI]

. Stress distributions are analyzed for coherent and dislocated islands. Thermally-activated nucleation of small, tens of nm in size, clusters or islands. One of the methods of quantum dot generation is lattice by heteroepitaxial growth is sensitive to the stress distribution in and around the island. Moreover, when the island

Zhigilei, Leonid V.

391

Epitaxial growth of Cu,,In,Ga...Se2 on GaAs,,110... and A. Rockett  

E-Print Network [OSTI]

. INTRODUCTION The Cu(In, Ga)Se2 CIGS absorber layer in a recent record-efficiency CIGS solar cell1 has a 220.13 Commercially supplied ``epi-ready'' liquid- encapsulated Czo

Rockett, Angus

392

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network [OSTI]

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

393

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces  

SciTech Connect (OSTI)

We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

2014-11-03T23:59:59.000Z

394

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk  

SciTech Connect (OSTI)

Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

2014-11-07T23:59:59.000Z

395

The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa  

SciTech Connect (OSTI)

We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

Özduran, Mustafa [Ahi Evran Üniversitesi Fen Edebiyat Fakültesi Fizik Bölümü, K?r?ehir (Turkey); Turgut, Kemal [Yüksek Lisans Ö?rencisi, K?r?ehir (Turkey); Arikan, Nihat [Ahi Evran Üniversitesi E?itim Fakültesi ?lkö?retim Bölümü, K?r?ehir (Turkey); ?yigör, Ahmet; Candan, Abdullah [Ahi Evran Üniversitesi Merkezi Ara?t?rma Laboratuvar?, K?r?ehir (Turkey)

2014-10-06T23:59:59.000Z

396

Reduced lattice temperature high-speed operation of pseudomorphic InGaAdGaAs field-effect transistors  

E-Print Network [OSTI]

,um GaAs buffer, 170 A Ino.zGao,sAs strained channel, 50 A undoped Ale,,,Ga,,,As undoped spacer, S dimensions of 0.25 x 200 pm and 0.5 X 200 pm with a source-drain spacing of 2 ,um. The MODFETs have gate dimensions of 0.35~ 100 pm and 0.47X 100 pm with a source-drain spacing of 1 ,um. The MISFETs have

Kolodzey, James

397

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

398

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

399

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

400

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells  

SciTech Connect (OSTI)

We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2014-03-21T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


401

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect (OSTI)

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

402

South Jersey Energy Company (Rhode Island) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar PowerstoriesNrelPartnerTypePonsa,HomeIndiana:Rhode Island References: EIA Form

403

Market Update: New England Islanded Grids | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels DataCombined HeatInformation ResourcesIslandAboutMarket Update: New England

404

Aeromagnetic study of the Island of Hawaii | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectricEnergy Information Lightning Dock Area (Cunniff &Energythe Island

405

Bell Island Hot Springs Geothermal Area | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectricEnergyCTBarre Biomass Facility JumpBedfordBelize: Energy ResourcesIsland

406

Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment  

SciTech Connect (OSTI)

The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2014-10-07T23:59:59.000Z

407

EDIN-USVI Clean Energy Quarterly: Volume 1 November 2010, Energy Development in Island Nations, U.S. Virgin Islands (Newsletter)  

SciTech Connect (OSTI)

This quarterly newsletter provides timely news and information about the plans and progress of the Energy Development in Island Nations U.S. Virgin Islands pilot project, including significant events and milestones, work undertaken by each of the five working groups, and EDIN-sponsored renewable energy and energy efficiency projects.

Not Available

2010-11-01T23:59:59.000Z

408

EDIN-USVI Clean Energy Quarterly: Volume 1, Issue 2, March 2011, Energy Development in Island Nations, U.S. Virgin Islands (Newsletter)  

SciTech Connect (OSTI)

This quarterly newsletter provides timely news and information about the plans and progress of the Energy Development in Island Nations U.S. Virgin Islands pilot project, including significant events and milestones, work undertaken by each of the five working groups, and project-related renewable energy and energy efficiency projects.

Not Available

2011-03-01T23:59:59.000Z

409

Acoustic Modeling for Aqua Ventus I off Monhegan Island, ME  

SciTech Connect (OSTI)

The DeepCwind consortium, led by the University of Maine, was awarded funding under the US Department of Energy’s Offshore Wind Advanced Technology Demonstration Program to develop two floating offshore wind turbines in the Gulf of Maine equipped with Goldwind 6 MW direct drive turbines, as the Aqua Ventus I project. The Goldwind turbines have a hub height of 100 m. The turbines will be deployed in Maine State waters, approximately 2.9 miles off Monhegan Island; Monhegan Island is located roughly 10 miles off the coast of Maine. In order to site and permit the offshore turbines, the acoustic output must be evaluated to ensure that the sound will not disturb residents on Monhegan Island, nor input sufficient sound levels into the nearby ocean to disturb marine mammals. This initial assessment of the acoustic output focuses on the sound of the turbines in air by modeling the assumed sound source level, applying a sound propagation model, and taking into account the distance from shore.

Whiting, Jonathan M.; Hanna, Luke A.; DeChello, Nicole L.; Copping, Andrea E.

2013-10-31T23:59:59.000Z

410

Short-period superlattices of AlN/Al{sub 0.08}Ga{sub 0.92}N grown on AlN substrates  

SciTech Connect (OSTI)

High-quality short-period superlattices of AlN/Al{sub 0.08}Ga{sub 0.92}N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 3x10{sup 8} cm{sup -2}. Complete removal of residual Al{sub 2}O{sub 3} surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al{sub 2}O{sub 3} islands with the surface coverage as low as 0.2% results in increased dislocation density.

Nikishin, S.A.; Borisov, B.A.; Chandolu, A.; Kuryatkov, V.V.; Temkin, H.; Holtz, M.; Mokhov, E.N.; Makarov, Yu.; Helava, H. [Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409-3102 (United States); Nano Tech Center/Department of Physics, Texas Tech University, Lubbock, Texas 79409 (United States); Fox Group Inc., 1154 Stealth Street, Livermore, California 94550 (United States)

2004-11-08T23:59:59.000Z

411

Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer  

SciTech Connect (OSTI)

The results of the analysis of the infrared lattice reflectance spectra of multiperiod ZnTe/CdTe superlattices with CdTe quantum dots are reported. The samples are grown by molecular beam epitaxy on the GaAs substrate with the ZnTe buffer layer. Due to the large number of periods of the superlattices, it is possible to observe CdTe-like vibration modes in the quantum dots, i.e., the dislocation-free stressed islands formed during the growth due to relaxation of elastic stresses between the ZnTe and CdTe layers are markedly different in their lattice parameters. From the frequency shifts of the CdTe- and ZnTe-like vibration modes with respect to the corresponding modes in the unstressed materials, it is possible to estimate the level of elastic stresses.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-03-15T23:59:59.000Z

412

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence  

SciTech Connect (OSTI)

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany); Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas [Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

2014-07-21T23:59:59.000Z

413

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

414

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect (OSTI)

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

415

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

416

Pulsed laser annealing of Be-implanted GaN  

SciTech Connect (OSTI)

Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

Wang, H.T.; Tan, L.S.; Chor, E.F. [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2005-11-01T23:59:59.000Z

417

Strategies for International Cooperation in Support of Energy Development in Pacific Island Nations  

SciTech Connect (OSTI)

The U.S. Department of Energy's National Renewable Energy Laboratory (NREL) has been partnering with island communities around the world to address the technical, policy, social, and economic hurdles to deploying energy efficiency and renewable energy technologies (RETs) on small, islanded systems. The lessons learned from these partnerships are briefly summarized in this document with the goal of supporting the International Renewable Energy Agency (IRENA) in the development of specific near-term and longer-term strategies for island RET deployment.

Miller, M.; Voss, P.; Warren, A.; Baring-Gould, I.; Conrad, M.

2012-05-01T23:59:59.000Z

418

GaAs-based high temperature electrically pumped polariton laser  

SciTech Connect (OSTI)

Strong coupling effects and polariton lasing are observed at 155?K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90?A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85?meV and a blueshift of the emission wavelength by 0.89?meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

Baten, Md Zunaid; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu; Frost, Thomas; Deshpande, Saniya; Das, Ayan [Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lubyshev, Dimitri; Fastenau, Joel M.; Liu, Amy W. K. [IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)

2014-06-09T23:59:59.000Z

419

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

420

E-Print Network 3.0 - ascension island south Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

25 MTRGAscension Management Plan 2002 SECTION 6: DEVELOPMENT OF INFRASTRUCTURE FOR ECOTOURISM Summary: from Ascension Island. Photos 21 & 22: Display Boards at Airhead and...

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Spatial localization of resistive drift wave structure in tokamak edge plasmas with an embedded magnetic island  

SciTech Connect (OSTI)

Resistive drift wave instability is investigated numerically in tokamak edge plasma confined by sheared slab magnetic field geometry with an embedded magnetic island. The focus is on the structural characteristics of eigenmode inside the island, where the density profile tends to be flattened. A transition of the dominant eigenmode occurs around a critical island width w{sub c}. For thin islands with a width below w{sub c}, two global long wavelength eigenmodes with approximately the same growth rate but different eigenfrequency are excited, which are stabilized by the magnetic island through two-dimensional mode coupling in both x and y (corresponding to radial and poloidal in tokamak) directions. On the other hand, a short wavelength eigenmode, which is destabilized by thick islands with a width above w{sub c}, dominates the edge fluctuation, showing a prominent structural localization in the region between the X-point and the O-point of the magnetic island. The main destabilization mechanism is identified as the mode coupling in the y direction, which is similar to the so-called toroidal coupling in tokamak plasmas. These three eigenmodes may coexist in the drift wave fluctuation for the island with a width around w{sub c}. It is demonstrated that the structural localization results mainly from the quasilinear flattening of density profile inside the magnetic island.

Hu, Shilin; Qu, Hongpeng [Southwestern Institute of Physics, Sichuan, Chengdu 610041 (China); Li, Jiquan, E-mail: lijq@energy.kyoto-u.ac.jp [Graduate School of Energy Science, Kyoto University, Gokasho, Uji, Kyoto 6110011 (Japan); Kishimoto, Y. [Graduate School of Energy Science, Kyoto University, Gokasho, Uji, Kyoto 6110011 (Japan); Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 6110011 (Japan)

2014-10-15T23:59:59.000Z

422

E-Print Network 3.0 - active anti-islanding method Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

...22 3.3.3 Anti-islanding, Microgrid Settings Reset (Lockout... Connect State: In the Connect state the CERTS Switch checks ... Source:...

423

E-Print Network 3.0 - anti-islanding method based Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

...22 3.3.3 Anti-islanding, Microgrid Settings Reset (Lockout... Connect State: In the Connect state the CERTS Switch checks ... Source:...

424

Laterally self-ordered silicon-germanium islands with optimized confinement properties  

SciTech Connect (OSTI)

We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band structure simulations. A comparison between these band structure simulations and photoluminescence spectroscopy shows that such islands have a significant three dimensional spatial electron-hole wave function overlap. In addition, we show that this spatial wave function overlap overcompensates a weak wave function spreading in k-space.

Zabel, Thomas; Sircar, Narayan [Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching (Germany) [Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching (Germany); Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg (Germany); Hauke, Norman; Kaniber, Michael; Finley, Jonathan J. [Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching (Germany)] [Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching (Germany); Zweck, Josef; Bougeard, Dominique [Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg (Germany)] [Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg (Germany); Döblinger, Markus [Department of Chemistry, Ludwig Maximilian Universität München, D-81377 Munich (Germany)] [Department of Chemistry, Ludwig Maximilian Universität München, D-81377 Munich (Germany); Abstreiter, Gerhard [Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching (Germany) [Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching (Germany); Institute for Advanced Study, Technische Universität München, D-85748 Garching (Germany); Arakawa, Yasuhiko [Institute for Advanced Study, Technische Universität München, D-85748 Garching (Germany) [Institute for Advanced Study, Technische Universität München, D-85748 Garching (Germany); Institute of Industrial Science, Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2013-08-05T23:59:59.000Z

425

Microsoft Word - CX-SundialIsland-FY13_WEB.doc  

Broader source: Energy.gov (indexed) [DOE]

20, 2013 REPLY TO ATTN OF: KEPR-4 SUBJECT: Environmental Clearance Memorandum Richard Heredia Project Manager - TEP- TPP- 1 Proposed Action: Sundial Island Transmission Tower...

426

Three Mile Island accident and post-accident recovery: what did we learn  

SciTech Connect (OSTI)

A description of the accident at Three Mile Island-2 reactor is presented. Activities related to the cleanup and decontamination of the reactor are described.

Collins, E.D.

1982-01-01T23:59:59.000Z

427

E-Print Network 3.0 - amelia island florida Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(OMEGA) 1... ,000,000 81002 Caroline Islands-Westem Part (OMEGA) 1,000,000 81007 Bikini Atoll to ... Source: Russell, Lynn - Scripps Institution of Oceanography Collection:...

428

Assessing the costs of solar power plants for the Island of Roatàn .  

E-Print Network [OSTI]

??This is an analysis assessing the installation costs of different solar power plant technologies and the current commercial availability for installation on the Island or… (more)

Huwe, Ethan (Ethan L.)

2011-01-01T23:59:59.000Z

429

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

430

AlP/GaP distributed Bragg reflectors  

SciTech Connect (OSTI)

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

431

Graphene/GaN diodes for ultraviolet and visible photodetectors  

SciTech Connect (OSTI)

The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

2014-08-18T23:59:59.000Z

432

Genomic islands predict functional adaptation in marine actinobacteria  

SciTech Connect (OSTI)

Linking functional traits to bacterial phylogeny remains a fundamental but elusive goal of microbial ecology 1. Without this information, it becomes impossible to resolve meaningful units of diversity and the mechanisms by which bacteria interact with each other and adapt to environmental change. Ecological adaptations among bacterial populations have been linked to genomic islands, strain-specific regions of DNA that house functionally adaptive traits 2. In the case of environmental bacteria, these traits are largely inferred from bioinformatic or gene expression analyses 2, thus leaving few examples in which the functions of island genes have been experimentally characterized. Here we report the complete genome sequences of Salinispora tropica and S. arenicola, the first cultured, obligate marine Actinobacteria 3. These two species inhabit benthic marine environments and dedicate 8-10percent of their genomes to the biosynthesis of secondary metabolites. Despite a close phylogenetic relationship, 25 of 37 secondary metabolic pathways are species-specific and located within 21 genomic islands, thus providing new evidence linking secondary metabolism to ecological adaptation. Species-specific differences are also observed in CRISPR sequences, suggesting that variations in phage immunity provide fitness advantages that contribute to the cosmopolitan distribution of S. arenicola 4. The two Salinispora genomes have evolved by complex processes that include the duplication and acquisition of secondary metabolite genes, the products of which provide immediate opportunities for molecular diversification and ecological adaptation. Evidence that secondary metabolic pathways are exchanged by Horizontal Gene Transfer (HGT) yet are fixed among globally distributed populations 5 supports a functional role for their products and suggests that pathway acquisition represents a previously unrecognized force driving bacterial diversification

Penn, Kevin; Jenkins, Caroline; Nett, Markus; Udwary, Daniel; Gontang, Erin; McGlinchey, Ryan; Foster, Brian; Lapidus, Alla; Podell, Sheila; Allen, Eric; Moore, Bradley; Jensen, Paul

2009-04-01T23:59:59.000Z

433

DEMONSTRATION OF BLACK LIQUOR GASIFICATION AT BIG ISLAND  

SciTech Connect (OSTI)

This Technical Progress Report provides an account of the status of the project for the demonstration of Black Liquor Gasification at Georgia-Pacific Corporation's Big Island, VA facility. The report also includes budget information and a milestone schedule. The project to be conducted by G-P is a comprehensive, complete commercial-scale demonstration that is divided into two phases. Phase I is the validation of the project scope and cost estimate. Phase II is project execution, data acquisition and reporting, and consists of procurement of major equipment, construction and start-up of the new system. Phase II also includes operation of the system for a period of time to demonstrate the safe operation and full integration of the energy and chemical recovery systems in a commercial environment. The objective of Phase I is to validate the process design and to engineer viable solutions to any technology gaps. This phase includes engineering and planning for the integration of the full-scale MTCI/StoneChem PulseEnhanced{trademark} black liquor steam-reformer chemical recovery system into G-P's operating pulp and paper mill at Big Island, Virginia. During this phase, the scope and cost estimate will be finalized to confirm the cost of the project and its integration into the existing system at the mill. The objective of Phase II of the project is the successful and safe completion of the engineering, construction and functional operation of the fully integrated full-scale steam reformer process system. This phase includes installation of all associated support systems and equipment required for the enhanced recovery of both energy and chemicals from all of the black liquor generated from the pulping process at the Big Island Mill. The objective also includes operation of the steam reformer system to demonstrate the ability of the system to operate reliably and achieve designed levels of energy and chemical recovery while maintaining environmental emissions at or below the limits set by the environmental permits.

Robert DeCarrera

2003-10-20T23:59:59.000Z

434

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

435

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

436

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

437

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

438

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network [OSTI]

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

439

High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy  

SciTech Connect (OSTI)

Double pulse doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors have been grown by molecular-beam epitaxy on GaAs substrates. Hall mobilities in excess of 7100 cm{sup 2}/V s at 300 K and 25000 cm{sup 2}/V s at 77 K are obtained with a sheet density of 3 x 10{sup 12} cm{sup {minus}2}. Photoluminescence measurements indicate that two electronic subbands are occupied, and the subband energies are determined. The doping pulses are resolved in secondary ion mass spectrometry measurements. Using a double recess process, transistors have been fabricated that have produced state of the art microwave performance. At 10 GHz a 1.2 mm device has simultaneously achieved a power added efficiency of 70%, output power of 0.97 W, and gain of 10 dB. 17 refs., 5 figs., 1 tab.

Hoke, W.E.; Lyman, P.S.; Labossier, W.H.; Brierley, S.K.; Hendriks, H.T.; Shanfield, S.R.; Aucoin, L.M.; Kazior, T.E. [Raytheon Research Division, Lexington, MA (United States)] [Raytheon Research Division, Lexington, MA (United States)

1992-05-01T23:59:59.000Z

440

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

442

Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence  

SciTech Connect (OSTI)

We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.

Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Carraro, S.; Meneghesso, G.; Trivellin, N.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy)] [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Mura, G. [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy)] [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy); Rossi, F.; Salviati, G. [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy)] [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Holc, K.; Weig, T.; Wagner, J. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany)] [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); Schade, L.; Karunakaran, M. A. [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)] [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany); Schwarz, U. T. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany) [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)

2013-12-02T23:59:59.000Z

443

Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells  

SciTech Connect (OSTI)

We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

Edmunds, C.; Malis, O., E-mail: omalis@purdue.edu [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Shao, J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Shirazi-HD, M. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, M. J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2014-07-14T23:59:59.000Z

444

Analysis of Three Mile Island-Unit 2 accident  

SciTech Connect (OSTI)

The Nuclear Safety Analysis Center (NSAC) of the Electric Power Research Institute has analyzed the Three Mile Island-2 accident. Early results of this analysis were a brief narrative summary, issued in mid-May 1979 and an initial version of this report issued later in 1979 as noted in the Foreword. The present report is a revised version of the 1979 report, containing summaries, a highly detailed sequence of events, a comparison of that sequence of events with those from other sources, 25 appendices, references and a list of abbreviations and acronyms. A matrix of equipment and system actions is included as a folded insert.

Not Available

1980-03-01T23:59:59.000Z

445

U.S. Virgin Islands Energy Road Map: Analysis  

SciTech Connect (OSTI)

This report lays out the strategy envisioned by the stakeholders in the U.S. Virgin Islands, U.S. Department of Energy, and U.S. Department of Interior to achieve the ambitious goal of achieving a 60% reduction in business-as-usual fossil fuel demand by 2025 (60x25) within the electricity sector. This work and supporting analysis provides a framework within which decisions can begin to be made, a concrete vision of what the future might hold, and a guide to determine what questions should follow.

Lantz, E.; Olis, D.; Warren, A.

2011-09-01T23:59:59.000Z

446

Three Mile Island waste management: a DOE Perspective  

SciTech Connect (OSTI)

The Department of Energy (DOE) is conducting waste management research and development activities which are applicable to the cleanup of the Three Mile Island-Unit 2 nuclear reactor. These activities have enabled DOE to provide timely assistance to General Public Utilities (GPU), the utility owner, the Nuclear Regulatory Commission (NRC), and the State of Pennsylvania in their efforts to quickly and safely clean up the damaged reactor. The DOE has been particularly active in evaluating proposed cleanup systems, providing information on waste characteristics, and advising GPU and NRC as to appropriate disposal methods for the waste generated during the cleanup. A description and discussion of some of these activities is presented.

D'Ambrosia, J.T.

1982-01-01T23:59:59.000Z

447

Integrated defueling system for Three Mile Island Unit 2  

SciTech Connect (OSTI)

The unique clean-up requirements of Three Mile Island Unit 2 have posed first-of-a-kind challenges for the equipment, tools, and operators involved in the defueling effort. Various equipment components and specialty remote tools were designed as an integrated defueling system to provide a means of safely working above the reactor and removing core debris. The basic defueling system consists of support equipment and specialty remote tools for specific operations. This paper describes the different equipment and tools, and explains the key interfaces and features of the integrated defueling system.

Brown, D.A.; Gallagher, R.E.; Rider, R.L.

1986-01-01T23:59:59.000Z

448

Newby Island I Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy ResourcesLoading map...(Utility Company) Jump to:City) Jump to: navigation,Newark isNewby Island I

449

Newby Island II Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy ResourcesLoading map...(Utility Company) Jump to:City) Jump to: navigation,Newark isNewby Island III

450

MHK Projects/Cat Island Project | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's Heat JumpIncMAK Technologies Jump to:BW2 Tidal <CETO LaCat Island Project

451

MHK Projects/Island 14 Bend | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's Heat JumpIncMAK Technologies Jump to:BW2Greenville BendHopeIjsselmeerIsland 14

452

MHK Projects/Turnbull Island | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's Heat JumpIncMAKGalway Bay IE < MHK ProjectRose BendReachTurnbull Island

453

Cumberland Hill, Rhode Island: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:EnergyWisconsin:2003)Crowley County, Colorado:Cumberland CountyRhode Island:

454

Project Fact Sheet Long Island HTS Power Cable Superconducting  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Careerlumens_placard-green.epsEnergy1.pdfMarket |21,-CommitteeItems at6ACity HQ StateTheLong Island

455

Long Island HTS Power Cable | Department of Energy  

Energy Savers [EERE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector General Office0-72.pdfGeorgeDoesn't Happen toLeveragingLindsey GeislerEnergyLochinvarLong Island

456

Bay Harbor Islands, Florida: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 EastMaine:Barbers Point Housing,Illinois:County is30.1805306°,Harbor Islands,

457

Blue Island, Illinois: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin: Energy ResourcesJersey:formBlue Energy Address: Box 29068 1950Blue Island is a

458

Energy Incentive Programs, Rhode Island | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in Review: TopEnergyIDIQBusinessin Jamaica,Idaho EnergyMontanaOregon EnergyRhode Island

459

Northern Mariana Islands: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's HeatMexico:Community NominationsCarolina‎ |NAE/EnelAZMariana Islands:

460

Saint Paul Island Wind Farm | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-g Grant ofRichardton Abbey Wind Farm(CTIhinder forLucia: EnergyIsland

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

San Clemente Island Wind Farm | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-g Grant ofRichardton Abbey WindSamsung Jump to:San Clemente Island Wind

462

DOE - Office of Legacy Management -- Staten Island Warehouse - NY 22  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou areDowntown Site - MO 02 FUSRAPStaten Island

463

Rock Island, Florida: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, searchVirginia BlueRiverwoods, Illinois:239178°,is a927003°,AtIsland,

464

Kelleys Island, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429 Throttled (botOpen6 ClimateKamas, Utah:Kaufman684342°,KeithKelleys Island,

465

Virgin Islands Recovery Act State Memo | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-Up from theDepartment of Dept.| Department ofEducationVirgin Islands Recovery Act State

466

Indium Growth and Island Height Control on Si Submonolayer Phases  

SciTech Connect (OSTI)

Nanotechnology refers any technique that involves about object with nanoscale (10{sup -9} m) or even smaller. It has become more and more important in recently years and has changed our world dramatically. Most of modern electronic devices today should thanks to the miniaturizing driven by development of nanotechnology. Recent years, more and more governments are investing huge amount of money in research related to nanotechnology. There are two major reasons that nanostructure is so fascinate. The first one is the miniaturizing. It is obvious that if we can make products smaller without losing the features, we can save the cost and increase the performance dramatically. For an example, the first computer in the world, ENIAC, which occupied several rooms, is less powerful than the cheapest calculator today. Today's chips with sizes of less than half an inch contain millions of basic units. All these should thank to the development of nanotechnology. The other reason is that when we come to nanoscale, there are many new effects due to the quantum effect which can't be found in large systems. For an example, quantum dots (QDs) are systems which sizes are below 1{micro}m(10{sup -6}m) and restricted in three dimensions. There are many interesting quantum effects in QDs, including discrete energy levels, and interdot coupling. Due to these properties and their small sizes, QDs have varies potential applications such as quantum computing, probe, light emitting device, solar cells, and laser. To meet the requirement of the nanoelectrical applications, the QDs must be grown highly uniformly because their property is highly dependent on their sizes. The major methods to grow uniform QDs include epitaxial, and lithograph. Lithography is a process to make patterns on a thin film by selectively removing certain parts of the film. Using this method, people have good control over size, location and spacing of QDs. For an example, the Extreme ultraviolet lithography (EUVL) have a wave length of 13.4nm so it can curve on the surface of an sample to make structure as small as the order of 10nm. however, lithograph usually causes permanent damages to the surface and in many cases the QDs are damaged during the lithograph and therefore result in high percentage of defects. Quantum size effect has attracted more and more interests in surface science due to many of its effects. One of its effects is the height preference in film growing and the resulting possibility of uniformly sized self-assemble nanostructure. The experiment of Pb islands on In 4x1 phase shows that both the height and the width can be controlled by proper growth conditions, which expands the growth dimensions from 1 to 2. This discover leads us to study the In/Pb interface. In Ch.3, we found that the Pb islands growing on In 4x1-Si(111) surface which have uniform height due to QSE and uniform width due to the constriction of In 4x1 lattice have unexpected stability. These islands are stable in even RT, unlike usual nanostructures on Pb/Si surface which are stable only at low temperature. Since similar structures are usually grown at low temperature, this discovery makes the grown structures closer to technological applications. It also shows the unusual of In/Pb interface. Then we studied the In islands grown on Pb-{alpha}-{radical}3x{radical}3-Si(111) phase in Ch.4. These islands have fcc structure in the first few layers, and then convert to bct structure. The In fcc islands have sharp height preference due to QSE like Pb islands. However, the preferred height is different (7 layer for Pb on Si 7x7 and 4 layer for Pb on In 4x1), due to the difference of interface. The In islands structure prefers to be bct than fcc with coverage increase. It is quantitatively supported by first-principle calculation. Unexpectedly, the In islands grown on various of In interfaces didn't show QSE effects and phase transition from fcc and bct structures as on the Pb-{alpha} interface (Ch.6). In g(s) curve there is no clear oscillations in the g(s) curve as the In on Pb-{alpha} phase. This

Chen, Jizhou

2009-05-09T23:59:59.000Z

467

Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes  

SciTech Connect (OSTI)

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

2014-10-27T23:59:59.000Z

468

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

469

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

470

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE/HRL Labs; Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

2015-04-01T23:59:59.000Z

471

Electron thermal transport within magnetic islands in the reversed-field pinch  

SciTech Connect (OSTI)

Tearing mode induced magnetic islands have a significant impact on the thermal characteristics of magnetically confined plasmas such as those in the reversed-field pinch (RFP). New Thomson scattering diagnostic capability on the Madison Symmetric Torus (MST) RFP has enabled measurement of the thermal transport characteristics of islands. Electron temperature (T{sub e}) profiles can now be acquired at 25 kHz, sufficient to measure the effect of an island on the profile as the island rotates by the measurement point. In standard MST plasmas with a spectrum of unstable tearing modes, remnant islands are present in the core between sawtoothlike reconnection events. Associated with these island remnants is flattening of the T{sub e} profile inside the island separatricies. This flattening is characteristic of rapid parallel heat conduction along helical magnetic field lines. In striking contrast, a temperature gradient within an m=1, n=5 island is observed in these same plasmas just after a sawtooth event when the m=1, n=5 mode may briefly come into resonance near the magnetic axis. This suggests local heating and relatively good confinement within the island. Local power balance calculations suggest reduced thermal transport within this island relative to the confinement properties of standard MST discharges between reconnection events. The magnetic field and island structure is modeled with three-dimensional nonlinear resistive magnetohydrodynamic simulations (DEBS code) with Lundquist numbers matching those in MST during standard discharges. During improved confinement plasmas with reduced tearing mode activity, temperature fluctuations correlated with magnetic signals are small with characteristic fluctuation amplitudes of order T-tilde{sub e}/T{sub e}approx2%.

Stephens, H. D.; Reusch, J. A. [Department of Physics, University of Wisconsin-Madison, 1150 University Ave., Madison, Wisconsin 53706 (United States); Den Hartog, D. J. [Department of Physics, University of Wisconsin-Madison, 1150 University Ave., Madison, Wisconsin 53706 (United States); Center for Magnetic Self-Organization in Laboratory and Astrophysical Plasmas, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Hegna, C. C. [Department of Physics, University of Wisconsin-Madison, 1150 University Ave., Madison, Wisconsin 53706 (United States); Department of Engineering Physics, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States)

2010-05-15T23:59:59.000Z

472

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

473

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

474

Hexagonal Growth Spirals on GaN Grown by Molecular Beam Epitaxy: Kinetics vs Thermodynamics  

E-Print Network [OSTI]

prepared, Ga-polar GaN(0001) templates. The surface morphology was studied using reflection high-energy-edge energy of 0.26 eV/Ã?. They suggest that local conditions at step edges dominate the growth. 1 conducted ex situ using AFM. Desorption mass spectrometry (DMS) was used to measure the GaN growth rate. Our

Cohen, Philip I.

475

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network [OSTI]

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

476

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network [OSTI]

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

477

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

478

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

479

Targeted Gene Deletion Demonstrates that Cell Adhesion MoleculeICAM-4 is Critical for Erythroblastic Island Formation  

SciTech Connect (OSTI)

Erythroid progenitors differentiate in erythroblastic islands, bone marrow niches composed of erythroblasts surrounding a central macrophage. Evidence suggests that within islands adhesive interactions regulate erythropoiesis and apoptosis. We are exploring whether erythroid intercellular adhesion molecule-4 (ICAM-4), animmunoglobulin superfamily member, participates in island formation. Earlier, we identified alpha V integrins as ICAM-4 counter receptors. Since macrophages express alpha V, ICAM-4 potentially mediates island attachments. To test this, we generated ICAM-4 knockout mice and developed quantitative, live cell techniques for harvesting intact islands and for reforming islands in vitro. We observed a 47 percent decrease in islands reconstituted from ICAM-4 null marrow compared to wild type. We also found a striking decrease in islands formed in vivo in knockout mice. Further, peptides that block ICAM-4 alpha V adhesion produced a 53-57 percent decrease in reconstituted islands, strongly suggesting that ICAM-4 binding to macrophage alpha V functions in island integrity. Importantly, we documented that alpha V integrin is expressed in macrophages isolated from erythro blastic islands. Collectively, these data provide convincing evidence that ICAM-4 is critical in erythroblastic island formation via ICAM-4/alpha V adhesion and also demonstrate that the novel experimental strategies we developed will be valuable in exploring molecular mechanisms of erythroblastic island formation and their functional role in regulating erythropoiesis.

Lee, Gloria; Lo, Annie; Short, Sarah A.; Mankelow, Tosti J.; Spring, Frances; Parsons, Stephen F.; Mohandas, Narla; Anstee, David J.; Chasis, Joel Anne

2006-02-15T23:59:59.000Z

480

Properties of H, O and C in GaN  

SciTech Connect (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "island ga freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network [OSTI]

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

482

Ohmic contacts to p-type GaP  

E-Print Network [OSTI]

thickness used in this scheme. The samples were annealed for I @n at temperatures ranging from 3 5 0 to 4 5 0 'C. Lower values of the contact resistivity than those of the Si/Pd/Zn/Pd/p-GaP scheme were achieved by depositing an Aluminum layer on the top...

Jorge Estevez, Humberto Angel

1996-01-01T23:59:59.000Z

483

Gallium Arsenide (GaAs) EDWARD D. PALIK  

E-Print Network [OSTI]

constants of pure (semi-insulating) GaAs are derived from a number of papers including the far-infrared at. [4]; the near-IR work of Pikhtin and Yas'kov [5]; the calorim- etry work of Christensen et al. [6 reflection work of Philipp and Ehrenreich [9]; and the synchrotron transmission work of Cardona et al. [10

Pulfrey, David L.

484

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network [OSTI]

We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z

485

Response of GaAs to fast intense laser pulses  

E-Print Network [OSTI]

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

486

Recombination in Low-Bandgap InGaAs  

SciTech Connect (OSTI)

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

487

Ballistic thermal point contacts made of GaAs nanopillars  

SciTech Connect (OSTI)

We measure the thermal conductance of GaAs pillars that are only a few nanometers long. Our observations can be understood with a simple model, in which the pillars constitute thermal point contacts between 3D phonon reservoirs. Moreover, first measurements of the electronic transport through these pillars are presented.

Bartsch, Th.; Wetzel, A.; Sonnenberg, D.; Schmidt, M.; Heyn, Ch.; Hansen, W. [Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

2013-12-04T23:59:59.000Z

488

GA Tech Campus Emergency Response Team STANDARD OPERATING PROCEDURE  

E-Print Network [OSTI]

GA Tech Campus Emergency Response Team GT-CERT STANDARD OPERATING PROCEDURE 09/29/2010 #12;2 Table as a condition for the appointment and continuing maintenance of membership. GT-CERT members operate for and to respond to emergency/disaster situations. 2.0 Purpose To establish procedures for the activation

489

High-quality InP on GaAs  

E-Print Network [OSTI]

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

490

Kauai Island Utility Co-op (KIUC) PV integration study.  

SciTech Connect (OSTI)

This report investigates the effects that increased distributed photovoltaic (PV) generation would have on the Kauai Island Utility Co-op (KIUC) system operating requirements. The study focused on determining reserve requirements needed to mitigate the impact of PV variability on system frequency, and the impact on operating costs. Scenarios of 5-MW, 10-MW, and 15-MW nameplate capacity of PV generation plants distributed across the Kauai Island were considered in this study. The analysis required synthesis of the PV solar resource data and modeling of the KIUC system inertia. Based on the results, some findings and conclusions could be drawn, including that the selection of units identified as marginal resources that are used for load following will change; PV penetration will displace energy generated by existing conventional units, thus reducing overall fuel consumption; PV penetration at any deployment level is not likely to reduce system peak load; and increasing PV penetration has little effect on load-following reserves. The study was performed by EnerNex under contract from Sandia National Laboratories with cooperation from KIUC.

Ellis, Abraham; Mousseau, Tom (Knoxville, TN)

2011-08-01T23:59:59.000Z

491

Structural stability of the Weeks Island oil repository  

SciTech Connect (OSTI)

A 3-D finite element analysis was performed to evaluate the stability of the SPR upper and lower oil storage levels at Weeks Island. The mechanical analysis predicted stresses and strains from which pillar stability was inferred using a fracture criterion developed from previous testing of Weeks Island salt. This analysis simulated the sequential mining of the two levels and subsequent oil fill of the mine. The predicted subsidence rates compare well to those measured over the past few years. Predicted failure mechanisms agree with observations made at the time the mine was being modified for oil storage. The modeling technique employed here treats an infinite array of pillars and is a reasonable representation of the behavior at the center of the mine. This analysis predicts that the lower level pillars, at the center of the mine, have fractured and their stability at this time is questionable. Localized pillar fracturing is predicted and implies that the mine is entering a phase of continual time dependent deterioration. Continued and expanded monitoring of the facility and development of methods to assess and predict its behavior are more important now than ever.

Preece, D.S.; Ehgartner, B.L.

1994-06-01T23:59:59.000Z

492

Whole-body counting in the Marshall Islands  

SciTech Connect (OSTI)

In 1978 the Marshall Islands Radiological Safety Program was organized to perform radiation measurements and assess radiation doses for the people of the Bikini, Enewetak, Rongelap and Utirik Atolls. One of the major field components of this program is whole- body counting (WBC). WBC is used to monitor the quantity of gamma- emitting radionuclides present in individuals. A primary objective of the program was to establish {sup 137}Cesium body contents among the Enewetak, Rongelap and Utirik populations. {sup 137}Cs was the only gamma-emitting fission radionuclide detected in the 1,967 persons monitored. {sup 137}Cs body burdens tended to increase with age for both sexes, and were higher in males. The average {sup 137}Cs dose Annual Effective Dose for the three populations was as follows: For Enewetak, the dose was 22{+-}4 {mu}Sv. For Utirik, the dose was 33{+-} 3 {mu}Sv. Since 1985 the Rongelap people have been self-exiled to Mejatto. Biological elimination should have reduced their dose to virtually zero, and the measured dose was 2{+-}2 {mu}Sv. If they had remained on Rongelap Island, the calculated dose would have been 99 {mu}Sv, which is about one-third of the background dose. 7 refs., 1 tab. (MHB)

Sun, L.C.; Clinton, J.; Kaplan, E.; Meinhold, C.B.

1991-01-01T23:59:59.000Z

493

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

494

Geographic information system for Long Island: An epidemiologic systems approach to identify environmental breast cancer risks on Long Island. Phase 1  

SciTech Connect (OSTI)

BNL is developing and implementing the project ``Geographic Information System (GIS) for Long Island`` to address the potential relationship of environmental and occupational exposures to breast cancer etiology on Long Island. The project is divided into two major phases: The four month-feasibility project (Phase 1), and the major development and implementation project (Phase 2). This report summarizes the work completed in the four month Phase 1 Project, ``Feasibility of a Geographic Information System for Long Island.`` It provides the baseline information needed to further define and prioritize the scope of work for subsequent tasks. Phase 2 will build upon this foundation to develop an operational GIS for the Long Island Breast Cancer Study Project (LIBCSP).

Barancik, J.I.; Kramer, C.F.; Thode, H.C. Jr.

1995-12-01T23:59:59.000Z

495

Testing a GaAs cathode in SRF gun  

SciTech Connect (OSTI)

RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

2011-03-28T23:59:59.000Z

496

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect (OSTI)

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

497

Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor  

SciTech Connect (OSTI)

An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

2014-08-25T23:59:59.000Z

498

POTASSIC MAGMATISM ON ST. LAWRENCE ISLAND, ALASKA, AND CAPE DEZHNEV, NORTHEAST RUSSIA  

E-Print Network [OSTI]

1 POTASSIC MAGMATISM ON ST. LAWRENCE ISLAND, ALASKA, AND CAPE DEZHNEV, NORTHEAST RUSSIA: EVIDENCE island on the Bering Shelf between Russia andAlaska and was the subject of reconnaissance investigations a syenite pluton at Cape Dezhnev on the Chukotka Peninsula of Russia. These geochemical data are used

Amato, Jeff

499

POTASSIC MAGMATISM ON ST. LAWRENCE ISLAND, ALASKA, AND CAPE DEZHNEV, NORTHEAST RUSSIA  

E-Print Network [OSTI]

1 POTASSIC MAGMATISM ON ST. LAWRENCE ISLAND, ALASKA, AND CAPE DEZHNEV, NORTHEAST RUSSIA: EVIDENCE island on the Bering Shelf between Russia andAlaska and was the subject of reconnaissance investigations a syenite pluton at Cape Dezhnev on the Chukotka Peninsula of Russia. These geo-chemical data are used

Toro, Jaime

500

A Preliminary Study of the Marine Biota at Navassa Island, Caribbean Sea  

E-Print Network [OSTI]

A Preliminary Study of the Marine Biota at Navassa Island, Caribbean Sea MARK GRACE, MELISSA.gov]. ABSTRACT--A preliminary study of reef fish and sharks was conducted at Navassa Island in the Caribbean Sea remote loca tion (southwest of the Windward Passage, Caribbean Sea) and lack of human habi tation. Reef