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  1. Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million...

    U.S. Energy Information Administration (EIA) Indexed Site

    Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep...

  2. Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...

    U.S. Energy Information Administration (EIA) Indexed Site

    Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780 ...

  3. Everett, Washington: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    District Smart Grid Project Utility Companies in Everett, Washington Snohomish County PUD No 1 References US Census Bureau Incorporated place and minor civil division...

  4. Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

    SciTech Connect (OSTI)

    Smalc-Koziorowska, Julita; Sawicka, Marta; Skierbiszewski, Czeslaw; Grzegory, Izabella

    2011-08-08

    We study the mismatch relaxation of 2-5 nm thin elongated AlN islands formed during growth of AlGaN on bulk m-plane GaN by molecular beam epitaxy. The relaxation of these m-plane AlN layers is anisotropic and occurs through the introduction of stacking faults in [0001] planes during island coalescence, while no relaxation is observed along the perpendicular [1120] direction. This anisotropy in the mismatch relaxation and the formation of stacking faults in the AlN islands are explained by the growth mode of the AlN platelets and their coalescence along the [0001] direction.

  5. Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 3,066 367 1,939 1,784 2015 2,847 3,010 3,004 2,925 2016 2,877 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Elba Island, GA LNG

  6. Price of Elba Island, GA Natural Gas LNG Imports from Equatorial Guinea

    U.S. Energy Information Administration (EIA) Indexed Site

    (Dollars per Thousand Cubic Feet) Equatorial Guinea (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Natural Gas LNG Imports from Equatorial Guinea (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 6.11 -- -- 2010's -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages:

  7. Price of Elba Island, GA Natural Gas LNG Imports from Nigeria (Nominal

    U.S. Energy Information Administration (EIA) Indexed Site

    Dollars per Thousand Cubic Feet) Nigeria (Nominal Dollars per Thousand Cubic Feet) Price of Elba Island, GA Natural Gas LNG Imports from Nigeria (Nominal Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 11.69 -- -- 9.93 -- 2010's -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016

  8. Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and

    U.S. Energy Information Administration (EIA) Indexed Site

    Tobago (Million Cubic Feet) Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,460 2,814 5,061 2,907 2,790 2,730 2012 2,854 2,881 2,790 2,862 2,834 2,849 5,562 2013 2,868 2,719 2,669 2014 3,066 367 1,939 1,784 2015 2,847 3,010 3,004 2,925 2016 2,877 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid

  9. EVERETT L. REDMOND II Senior Director, Policy Development

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EVERETT L. REDMOND II Senior Director, Policy Development 1201 F Street, NW, Suite 1100 Washington, DC 20004 P: 202.739.8122 elr@nei.org nei.org January 22, 2015 Mr. David Henderson U.S. Department of Energy Office of Nuclear Energy Mailstop NE-52 19901 Germantown Road Germantown, MD 20874-1290 Subject: Excess Uranium Management: Effects of DOE Transfers of Excess Uranium on Domestic Uranium Mining, Conversion, and Enrichment Industries; Request for Information, 79 FR 72,661 (December 8, 2014)

  10. ISLANDER

    Energy Science and Technology Software Center (OSTI)

    003251WKSTN00 Genomic Island Identification Software v 1.0 http://bioinformatics.sandia.gov/software

  11. Everett, MA Liquefied Natural Gas Total Imports (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Total Imports (Million Cubic Feet) Everett, MA Liquefied Natural Gas Total Imports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 2,583 2,728 2014 5,470 3,783 2,334 2,806 2,175 3,311 1,567 2,871 2,505 2,003 2015 7,729 7,623 5,521 1,673 2,557 7,133 8,237 2,563 2,653 1,541 2,452 2016 10,633 8,593 5,626 4,693 5,087 7,520 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016

  12. Price of Everett, MA Natural Gas LNG Imports from Algeria (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Algeria (Dollars per Thousand Cubic Feet) Price of Everett, MA Natural Gas LNG Imports from Algeria (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 2.56 2000's 3.48 4.82 3.77 -- -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Price of

  13. Price of Everett, MA Natural Gas LNG Imports from Australia (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Australia (Dollars per Thousand Cubic Feet) Price of Everett, MA Natural Gas LNG Imports from Australia (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 3.55 2000's NA NA NA - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Price of Liquefied Natural Gas

  14. Price of Everett, MA Natural Gas LNG Imports from Egypt (Nominal Dollars

    U.S. Energy Information Administration (EIA) Indexed Site

    per Thousand Cubic Feet) Egypt (Nominal Dollars per Thousand Cubic Feet) Price of Everett, MA Natural Gas LNG Imports from Egypt (Nominal Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- 5.58 2010's 7.29 -- -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Price

  15. Everett, MA Liquefied Natural Gas Imports From Yemen (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Imports From Yemen (Million Cubic Feet) Everett, MA Liquefied Natural Gas Imports From Yemen (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,688 5,591 5,465 2,843 5,608 2,865 5,622 5,537 5,424 2012 2,805 2,765 2,721 2,589 2,899 2,837 2013 2,728 2,763 2,806 2,728 2014 2,329 2,806 2,871 2015 2,234 2,373 2,834 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next

  16. Everett, MA Natural Gas Liquefied Natural Gas Imports from Trinidad and

    U.S. Energy Information Administration (EIA) Indexed Site

    Tobago (Million Cubic Feet) Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Everett, MA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 10,240 11,488 7,086 8,271 8,126 8,150 7,731 7,870 5,199 5,520 9,264 4,691 2012 9,482 8,458 7,661 1,447 4,940 5,465 6,646 10,377 5,634 4,748 2,553 2,581 2013 5,126 5,003 4,629 5,171 5,626 5,173 8,023 5,961 2,995 2,674 2,583 2014 3,141

  17. US Virgin Islands-Energy Development in Island Nations (EDIN...

    Open Energy Info (EERE)

    US Virgin Islands-Energy Development in Island Nations (EDIN) Pilot Project Jump to: navigation, search Logo: US Virgin Islands-Energy Development in Island Nations (EDIN) Pilot...

  18. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  19. San Miguel Island, Channel Islands National Park, California | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Miguel Island, Channel Islands National Park, California San Miguel Island, Channel Islands National Park, California Photo of Wind/Photovoltaic Power System at San Miguel Island San Miguel Island is one of five islands that make up Channel Islands National Park on the coast of southern California. The islands comprise 249,353 acres (100,910 hectares) of land and ocean that teems with terrestrial and marine life. The National Park Service (NPS) protects the pristine resources at

  20. Monhegan Island | Open Energy Information

    Open Energy Info (EERE)

    Island Jump to: navigation, search Name Monhegan Island Facility Monhegan Island Sector Wind energy Facility Type Offshore Wind Facility Status Proposed Owner Maine State Dept of...

  1. Analysis of sediments and soils for chemical contamination for the design of US Navy homeport facility at East Waterway of Everett Harbor, Washington. Final report. [Macoma inquinata; Mytilus edulis

    SciTech Connect (OSTI)

    Anderson, J.W.; Crecelius, E.A.

    1985-03-01

    Contaminated sediments in the East Waterway of Everett Harbor, Washington, are extremely localized; they consist of a layer of organically-rich, fine sediments overlying a relatively cleaner, more sandy native material. The contaminated layer varies in thickness throughout the waterway from as much as 2 meters to only a few centimeters. Generally, the layer is thicker and more contaminated at the head of the waterway (northern end) and becomes thinner and less contaminated as one proceeds southerly out of the waterway and into Port Gardner. These sediments contain elevated levels of heavy metals and polynuclear aromatic hydrocarbons (PAH) and scattered concentrations of polychlorinated biphenyls (PCB). Approximately 500,000 cubic yards of material exhibit elevated chemical contamination compared to Puget Sound background levels. The contaminated sediments in this waterway require biological testing before decisions can be made regarding the acceptability of unconfined disposal.

  2. Washington County, Rhode Island: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Rhode Island Bradford, Rhode Island Charlestown, Rhode Island Exeter, Rhode Island Hope Valley, Rhode Island Hopkinton, Rhode Island Kingston, Rhode Island Narragansett Pier,...

  3. Island Energy Conference

    Broader source: Energy.gov [DOE]

    The sixth annual Island Energy Conference will include speakers and panels on Friday, November 6, and a site visit to Star Island, New Hampshire, that hosts Northern New England’s largest offshore...

  4. Arctic ice islands

    SciTech Connect (OSTI)

    Sackinger, W.M.; Jeffries, M.O.; Lu, M.C.; Li, F.C.

    1988-01-01

    The development of offshore oil and gas resources in the Arctic waters of Alaska requires offshore structures which successfully resist the lateral forces due to moving, drifting ice. Ice islands are floating, a tabular icebergs, up to 60 meters thick, of solid ice throughout their thickness. The ice islands are thus regarded as the strongest ice features in the Arctic; fixed offshore structures which can directly withstand the impact of ice islands are possible but in some locations may be so expensive as to make oilfield development uneconomic. The resolution of the ice island problem requires two research steps: (1) calculation of the probability of interaction between an ice island and an offshore structure in a given region; and (2) if the probability if sufficiently large, then the study of possible interactions between ice island and structure, to discover mitigative measures to deal with the moving ice island. The ice island research conducted during the 1983-1988 interval, which is summarized in this report, was concerned with the first step. Monte Carlo simulations of ice island generation and movement suggest that ice island lifetimes range from 0 to 70 years, and that 85% of the lifetimes are less then 35 years. The simulation shows a mean value of 18 ice islands present at any time in the Arctic Ocean, with a 90% probability of less than 30 ice islands. At this time, approximately 34 ice islands are known, from observations, to exist in the Arctic Ocean, not including the 10-meter thick class of ice islands. Return interval plots from the simulation show that coastal zones of the Beaufort and Chukchi Seas, already leased for oil development, have ice island recurrences of 10 to 100 years. This implies that the ice island hazard must be considered thoroughly, and appropriate safety measures adopted, when offshore oil production plans are formulated for the Alaskan Arctic offshore. 132 refs., 161 figs., 17 tabs.

  5. Island Energy Snapshots

    Broader source: Energy.gov [DOE]

    These energy snapshots highlight the energy landscape of islands in the Caribbean, the Pacific, and the surrounding area.

  6. Bainbridge Island Data Dashboard

    Broader source: Energy.gov [DOE]

    The data dashboard for Bainbridge Island, a partner in the U.S. Department of Energy's Better Buildings Neighborhood Program.

  7. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

    SciTech Connect (OSTI)

    Jha, Smita; Liu, C.-C.; Nealey, P. F.; Kuech, T. F.; Kuan, T. S.; Babcock, S. E.; Park, J. H.; Mawst, L. J.

    2009-08-10

    Defect reduction in the large lattice mismatched system of GaSb on GaAs, {approx}7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of {approx}20 nm holes on {approx}40 nm centers in a 20 nm SiO{sub 2} layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO{sub 2} layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.

  8. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  9. Island Boundaries, Hawaii

    SciTech Connect (OSTI)

    Nicole Lautze

    2015-01-01

    Outline of Hawaiian islands (Kauai, Oahu, Molokai, Kahoolawe, Lanai, Maui, Hawaii) generated from the Geologic Map of the State of Hawaii published by the USGS in 2007.

  10. San Clemente Island, Channel Islands National Park, California...

    Energy Savers [EERE]

    San Clemente Island, Channel Islands National Park, California Photo of Wind Turbine on ... Management Program (FEMP). A third turbine was installed in 1999, allowing the wind ...

  11. TWP Island Cloud Trail Studies

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    These island cloud trails have been observed from both the islands of Nauru and Manus, Papua New Guinea. Figure 2 shows an island cloud at Manus observed from MTI and from the ...

  12. Basaltic island sand provenance

    SciTech Connect (OSTI)

    Marsaglia, K.M. . Dept. of Geological Sciences)

    1992-01-01

    The Hawaiian Islands are an ideal location to study basaltic sand provenance in that they are a series of progressively older basaltic shield volcanoes with arid to humid microclimates. Sixty-two sand samples were collected from beaches on the islands of Hawaii, Maui, Oahu and Kauai and petrographically analyzed. The major sand components are calcareous bioclasts, volcanic lithic fragments, and monomineralic grains of dense minerals and plagioclase. Proportions of these components vary from island to island, with bioclastic end members being more prevalent on older islands exhibiting well-developed fringing reef systems and volcanic end members more prevalent on younger, volcanically active islands. Climatic variations across the island of Hawaii are reflected in the percentage of weathered detritus, which is greater on the wetter, northern side of the island. The groundmass of glassy, basaltic lithics is predominantly black tachylite, with lesser brown sideromelane; microlitic and lathwork textures are more common than holohyaline vitric textures. Other common basaltic volcanic lithic fragments are holocrystalline aggregates of silt-sized pyroxene or olivine, opaque minerals and plagioclase. Sands derived from alkalic lavas are texturally and compositionally indistinguishable from sands derived from tholeiitic lavas. Although Hawaiian basaltic sands overlap in composition with magmatic arc-derived sands in terms of their relative QFL, QmPK and LmLvLs percentages, they are dissimilar in that they lack felsic components and are more enriched in lathwork volcanic lithic fragments, holocrystalline volcanic lithic fragments, and dense minerals.

  13. Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hwang, Ya-Hsi; Ahn, Shihyun; Dong, Chen; Zhu, Weidi; Kim, Byung-Jae; Le, Lingcong; Ren, Fan; Lind, Aaron G.; Dahl, James; Jones, Kevin S.; et al

    2015-04-27

    We investigated the degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE). The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/ₜafter 3 min BOE treatment. The alloyed Ohmic metallization consisted 3–5 μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Lastly, we used energy dispersive x-ray analysis and Auger electron microscopy to analyze the compositions and metal distributions in the metal alloys prior to and aftermore » BOE exposure.« less

  14. United States Virgin Islands: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Rebate Program (Virgin Islands) U.S. Virgin Islands - Energy Efficiency Residential Rebates (Virgin Islands) U.S. Virgin Islands - Net Metering (Virgin Islands) U.S. Virgin...

  15. PSEG Long Island- Renewable Electricity Goal

    Broader source: Energy.gov [DOE]

    NOTE: As of January 1, 2014, Long Island is served by PSEG Long Island, replacing Long Island Power Authority (LIPA). Long Island Renewable Energy goal ended in 2013, and currently does not have...

  16. Long Island Solar Farm

    SciTech Connect (OSTI)

    Anders, R.

    2013-05-01

    The Long Island Solar Farm (LISF) is a remarkable success story, whereby very different interest groups found a way to capitalize on unusual circumstances to develop a mutually beneficial source of renewable energy. The uniqueness of the circumstances that were necessary to develop the Long Island Solar Farm make it very difficult to replicate. The project is, however, an unparalleled resource for solar energy research, which will greatly inform large-scale PV solar development in the East. Lastly, the LISF is a superb model for the process by which the project developed and the innovation and leadership shown by the different players.

  17. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  18. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Huang, S.; Kim, S. J.; Pan, X. Q.; Goldman, R. S.

    2014-07-21

    We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

  19. Island Wide Management Corporation

    Office of Legacy Management (LM)

    9 1986 Island Wide Management Corporation 3000 Marcus Avenue Lake Success, New York 11042 Dear Sir or Madam: I am sending you this letter and the enclosed information as you have been identified by L. I. Trinin of Glick Construction Company as the representatives of the owners of the property that was formerly the site of the Sylvania-Corning Nuclear Corporation in Bayside, New York. The Department of Energy is evaluating the radiological condition of sites that were utilized under the Manhattan

  20. AMF Deployment, Graciosa Island, Azores

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Graciosa Island Home Data Plots and Baseline Instruments Satellite Retrievals Experiment Planning CAP-MBL Proposal Abstract and Related Campaigns Science Questions Science Plan...

  1. Enjebi Island dose assessment

    SciTech Connect (OSTI)

    Robison, W.L.; Conrado, C.L.; Phillips, W.A.

    1987-07-01

    We have updeated the radiological dose assessment for Enjebi Island at Enewetak Atoll using data derived from analysis of food crops grown on Enjebi. This is a much more precise assessment of potential doses to people resettling Enjebi Island than the 1980 assessment in which there were no data available from food crops on Enjebi. Details of the methods and data used to evaluate each exposure pathway are presented. The terrestrial food chain is the most significant potential exposure pathway and /sup 137/Cs is the radionuclide responsible for most of the estimated dose over the next 50 y. The doses are calculated assuming a resettlement date of 1990. The average wholebody maximum annual estimated dose equivalent derived using our diet model is 166 mremy;the effective dose equivalent is 169 mremy. The estimated 30-, 50-, and 70-y integral whole-body dose equivalents are 3.5 rem, 5.1 rem, and 6.2 rem, respectively. Bone-marrow dose equivalents are only slightly higher than the whole-body estimates in each case. The bone-surface cells (endosteal cells) receive the highest dose, but they are a less sensitive cell population and are less sensitive to fatal cancer induction than whole body and bone marrow. The effective dose equivalents for 30, 50, and 70 y are 3.6 rem, 5.3 rem, and 6.6 rem, respectively. 79 refs., 17 figs., 24 tabs

  2. Fox Islands Wind Project | Open Energy Information

    Open Energy Info (EERE)

    Fox Islands Electric Cooperative Location Vinalhaven Island ME Coordinates 44.088391, -68.857802 Show Map Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":...

  3. University of Rhode Island | Open Energy Information

    Open Energy Info (EERE)

    Testing Facilities Name University of Rhode Island Address Department of Ocean Engineering, Sheets Building, Bay Campus Place Narragansett, Rhode Island Zip 02882 Sector...

  4. Hainan Green Islands Power | Open Energy Information

    Open Energy Info (EERE)

    Green Islands Power Jump to: navigation, search Name: Hainan Green Islands Power Place: Hainan Province, China Sector: Solar Product: China-based JV developing on-grid solar...

  5. Grey Island Energy Inc | Open Energy Information

    Open Energy Info (EERE)

    Grey Island Energy Inc Jump to: navigation, search Name: Grey Island Energy Inc Address: Suite 3003 Inco Innovation Centre Memorial University of Newfoundland PO Box 4200 Place: St...

  6. Island Energy Solutions | Open Energy Information

    Open Energy Info (EERE)

    search Name: Island Energy Solutions Place: Kailua, Hawaii Zip: 96734 Product: Island Energy Solutions, Inc. is an electrical contracting company, based out of Kailua, Oahu,...

  7. Island Energy Snapshots | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    islands around the globe, the featured islands are heavily reliant on fossil fuels for electricity generation, leaving them vulnerable to global oil price fluctuations that...

  8. MWRA Deer Island Wind | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name MWRA Deer Island Wind Facility MWRA Deer Island Wind Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner MWRA Deer...

  9. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  10. Growth modes of InN(000-1) on GaN buffer layers on sapphire

    SciTech Connect (OSTI)

    Liu, Bing; Kitajima, Takeshi; Chen, Dongxue; Leone, Stephen R.

    2005-01-24

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  11. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  12. EIS-0006: Wind Turbine Generator System, Block Island, Rhode Island

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy prepared this EIS to evaluate the environmental impacts of installing and operating a large experimental wind turbine, designated the MOD-OA, which is proposed to be installed on a knoll in Rhode Island's New Meadow Hill Swamp, integrated with the adjacent Block Island Power Company power plant and operated to supply electricity to the existing utility network.

  13. Island Gas | Open Energy Information

    Open Energy Info (EERE)

    United Kingdom Zip: W1J 7BU Sector: Renewable Energy Product: UK-based coal bed methane company, Island Gas was the subject of a reverse takeover by KP Renewables in...

  14. Lessons Learned in Islands | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Transition Initiative » Lessons Learned in Islands Lessons Learned in Islands Hawai'i, the U.S. Virgin Islands, and other island communities have successfully implemented renewable energy and energy efficiency technologies to decrease their reliance on fossil fuels and achieve sustainability, economic development, and other goals. Read how in these lessons learned, which are also featured in the Islands Energy Playbook. Assessing Pathways in Aruba Learn how Aruba developed an actionable

  15. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  16. Long Island Power Authority Solar Project | Open Energy Information

    Open Energy Info (EERE)

    Long Island Power Authority Solar Project Jump to: navigation, search Name Long Island Power Authority Solar Project Facility Long Island Power Authority Solar Project Sector Solar...

  17. Mustang Island Offshore Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    Island Offshore Wind Farm Jump to: navigation, search Name Mustang Island Offshore Wind Farm Facility Mustang Island Offshore Wind Farm Sector Wind energy Facility Type Offshore...

  18. Newport County, Rhode Island: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    5 Climate Zone Subtype A. Registered Energy Companies in Newport County, Rhode Island Forbes Energy LLC Places in Newport County, Rhode Island Jamestown, Rhode Island Little...

  19. Rhode Island Offshore Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    Rhode Island Offshore Wind Farm Jump to: navigation, search Name Rhode Island Offshore Wind Farm Facility Rhode Island Offshore Wind Farm Sector Wind energy Facility Type Offshore...

  20. Newby Island I Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    Newby Island I Biomass Facility Jump to: navigation, search Name Newby Island I Biomass Facility Facility Newby Island I Sector Biomass Facility Type Landfill Gas Location Santa...

  1. Energy Department Helps Advance Island Clean Energy Goals | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department Helps Advance Island Clean Energy Goals Energy Department Helps Advance Island Clean Energy Goals Highlights a solar power purchase agreement between the Virgin Islands ...

  2. Saint Paul Island Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    Paul Island Wind Farm Jump to: navigation, search Name Saint Paul Island Wind Farm Facility Saint Paul Island Sector Wind energy Facility Type Community Wind Facility Status In...

  3. Seeding of InP islands on InAs quantum dot templates

    SciTech Connect (OSTI)

    Medeiros-Ribeiro, G.; Maltez, R. L.; Bernussi, A. A.; Ugarte, D.; de Carvalho, W.

    2001-06-01

    The ability of stacking layers of islands and their corresponding alignment have prompted a number of studies. The main focus so far has been on stacking self-assembled quantum dot (QD) layers of the same material and composition. Our goal is to create systems of coupled QDs of different electronic properties, aiming at hybridization of their different electronic levels. In this work, we investigate the early stages of the coupling of alternate InAs{endash}InP QD layers through a GaAs spacer layer. We have found that by using an InAs layer containing QDs as seeds, we can control the size, shape and density of InP islands by varying the spacer thickness. We have observed a significant improvement of the InP island size uniformity, as well as an induced size reduction, thus providing an extra degree of tunability previously available only through growth kinetics. {copyright} 2001 American Institute of Physics.

  4. One million served: Rhode Island`s recycling facility

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-11-01

    Rhode Island`s landfill and adjacent materials recovery facility (MRF) in Johnston, both owned by the quasi-public Rhode Island Resource Recovery Corp. (RIRRC, Johnston), serve the entire state. The $12-million recycling facility was built in 1989 next to the state`s sole landfill, the Central Landfill, which accepts only in-state trash. The MRF is operated for RIRRC by New England CRInc. (Hampton, N.H.), a unit of Waste Management, Inc. (WMI, Oak Brook, Ill.). It handles a wide variety of materials, from the usual newspaper, cardboard, and mixed containers to new streams such as wood waste, scrap metal, aseptic packaging (milk and juice boxes), and even textiles. State municipalities are in the process of adding many of these new recyclable streams into their curbside collection programs, all of which feed the facility.

  5. Suppression of metastable-phase inclusion in N-polar (0001{sup }) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Shojiki, Kanako Iwabuchi, Takuya; Kuboya, Shigeyuki; Choi, Jung-Hun; Tanikawa, Tomoyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi; Usami, Noritaka

    2015-06-01

    The metastable zincblende (ZB) phase in N-polar (0001{sup }) (?c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the ?c-plane and Ga-polar (0001) (+c-plane), the ?c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the ?c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated.

  6. Thermal island destabilization and the Greenwald limit

    SciTech Connect (OSTI)

    White, R. B.; Gates, D. A.; Brennan, D. P.

    2015-02-15

    Magnetic reconnection is ubiquitous in the magnetosphere, the solar corona, and in toroidal fusion research discharges. In a fusion device, a magnetic island saturates at a width which produces a minimum in the magnetic energy of the configuration. At saturation, the modified current density profile, a function of the flux in the island, is essentially flat, the growth rate proportional to the difference in the current at the O-point and the X-point. Further modification of the current density profile in the island interior causes a change in the island stability and additional growth or contraction of the saturated island. Because field lines in an island are isolated from the outside plasma, an island can heat or cool preferentially depending on the balance of Ohmic heating and radiation loss in the interior, changing the resistivity and hence the current in the island. A simple model of island destabilization due to radiation cooling of the island is constructed, and the effect of modification of the current within an island is calculated. An additional destabilization effect is described, and it is shown that a small imbalance of heating can lead to exponential growth of the island. A destabilized magnetic island near the plasma edge can lead to plasma loss, and because the radiation is proportional to plasma density and charge, this effect can cause an impurity dependent density limit.

  7. Thermal island destabilization and the Greenwald limit

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    White, R. B.; Gates, D. A.; Brennan, D. P.

    2015-02-24

    Magnetic reconnection is ubiquitous in the magnetosphere, the solar corona, and in toroidal fusion research discharges. A magnetic island saturates at a width which produces a minimum in the magnetic energy of the configuration is evident in a fusion device. At saturation, the modified current density profile, a function of the flux in the island, is essentially flat, the growth rate proportional to the difference in the current at the O-point and the X-point. Furthermore, modification of the current density profile in the island interior causes a change in the island stability and additional growth or contraction of the saturatedmore » island. Because field lines in an island are isolated from the outside plasma, an island can heat or cool preferentially depending on the balance of Ohmic heating and radiation loss in the interior, changing the resistivity and hence the current in the island. A simple model of island destabilization due to radiation cooling of the island is constructed, and the effect of modification of the current within an island is calculated. In addition destabilization effect is described, and it is shown that a small imbalance of heating can lead to exponential growth of the island. A destabilized magnetic island near the plasma edge can lead to plasma loss, and because the radiation is proportional to plasma density and charge, this effect can cause an impurity dependent density limit.« less

  8. Recharge Data for Hawaii Island

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Nicole Lautze

    2015-01-01

    Recharge data for Hawaii Island in shapefile format. The data are from the following sources: Whittier, R.B and A.I. El-Kadi. 2014. Human Health and Environmental Risk Ranking of On-Site Sewage Disposal systems for the Hawaiian Islands of Kauai, Molokai, Maui, and Hawaii – Final, Prepared for Hawaii Dept. of Health, Safe Drinking Water Branch by the University of Hawaii, Dept. of Geology and Geophysics. Oki, D. S. 1999. Geohydrology and Numerical Simulation of the Ground-Water Flow System of Kona, Island of Hawaii. U.S. Water-Resources Investigation Report: 99-4073. Oki, D. S. 2002. Reassessment of Ground-water Recharge and Simulated Ground-Water Availability for the Hawi Area of North Kohala, Hawaii. U.S. Geological Survey Water-Resources Investigation report 02-4006.

  9. Hawaii Island Groundwater Flow Model

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Nicole Lautze

    2015-01-01

    Groundwater flow model for Hawaii Island. Data is from the following sources: Whittier, R.B., K. Rotzoll, S. Dhal, A.I. El-Kadi, C. Ray, G. Chen, and D. Chang. 2004. Hawaii Source Water Assessment Program Report – Volume II – Island of Hawaii Source Water Assessment Program Report. Prepared for the Hawaii Department of Health, Safe Drinking Water Branch. University of Hawaii, Water Resources Research Center. Updated 2008; and Whittier, R. and A.I. El-Kadi. 2014. Human and Environmental Risk Ranking of Onsite Sewage Disposal Systems For the Hawaiian Islands of Kauai, Molokai, Maui, and Hawaii – Final. Prepared by the University of Hawaii, Dept. of Geology and Geophysics for the State of Hawaii Dept. of Health, Safe Drinking Water Branch. September 2014.

  10. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  11. Market Update: New England Islanded Grids

    Broader source: Energy.gov [DOE]

    Join the Islanded Grid Resource Center (IGRC) for our upcoming webinar highlighting the islanded grid communities along the New England coast that are exploring their options for reducing high...

  12. ARM - News from the Ascension Island deployment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govNews from the Ascension Island deployment News from the Ascension Island deployment Media Coverage Features ClimateWire "Do clouds + smoke = climate change? Africa may have answers" *Subscription required. June 16, 2016

  13. Bainbridge Island Data Dashboard | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    The data dashboard for Bainbridge Island, a partner in the U.S. Department of Energy's Better Buildings Neighborhood Program. Bainbridge Island Data Dashboard (301.2 KB) More ...

  14. REAP Islanded Grid Wind Power Conference

    Broader source: Energy.gov [DOE]

    Hosted by Renewable Energy Alaska Project, this three-day conference will show attendees how to learn, network, and share information on wind systems in island and islanded grid environments through expert panel discussions, stakeholder dialogue, and training.

  15. REAP Islanded Grid Wind Power Conference

    Office of Energy Efficiency and Renewable Energy (EERE)

    Hosted by Renewable Energy Alaska Project, this three-day conference will show attendees how to learn, network, and share information on wind systems in island and islanded grid environments...

  16. Energy Transition Initiative: Island Energy Snapshot - U.S. Virgin Islands (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2015-03-01

    This profile provides a snapshot of the energy landscape of the U.S. Virgin Islands (USVI) - St. Thomas, St. John, and St. Croix. The Virgin Islands archipelago makes up the northern portion of the Lesser Antilles and the western island group of the Leeward Islands, forming the border between the Atlantic Ocean and the Caribbean Sea.

  17. Aleutian Pribilof Islands Association - Wind Energy Development

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    In the Aleutian Pribilof Islands Tribal Energy Program Review November 18, 2008 By Bruce Wright Connie Fredenberg Aleutian Pribilof Islands Association "The Birthplace of the Wind" Aleutian Pribilof Islands Association, Inc. * 150 mph gusts * Extreme Turbulence Potential * Corrosive Salt Spray World Class Wind: A Mixed Blessing Aleutian Pribilof Islands Association, Inc. LOGISTICS * Anchorage to Nikolski is 916 air miles for $1,316 rt. * During the fishing season a refundable ticket

  18. Islands and Our Renewable Energy Future (Presentation)

    SciTech Connect (OSTI)

    Baring-Gould, I.; Gevorgian, V.; Kelley, K.; Conrad, M.

    2012-05-01

    Only US Laboratory Dedicated Solely to Energy Efficiency and Renewable Energy. High Contribution Renewables in Islanded Power Systems.

  19. Past, Present, Future Erosion at Locke Island

    SciTech Connect (OSTI)

    Bjornstad, Bruce N.

    2006-08-08

    This report describes and documents the erosion that has occurred along the northeast side of Locke Island over the last 10 to 20 years. The principal cause of this erosion is the massive Locke Island landslide complex opposite the Columbia River along the White Bluffs, which constricts the flow of the river and deflects the river's thalweg southward against the island.

  20. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  1. Energy Transition Initiative: Islands Playbook

    Broader source: Energy.gov [DOE]

    The Island Energy Playbook provides an action-oriented guide to successfully initiating, planning, and completing a transition to an energy system that primarily relies on local resources to eliminate a dependence on one or two imported fuels. It is intended to serve as a readily available framework that any community can adapt to organize its own energy transition effort.

  2. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  3. Magnetic island evolution in hot ion plasmas

    SciTech Connect (OSTI)

    Ishizawa, A.; Nakajima, N.; Waelbroeck, F. L.; Fitzpatrick, R.; Horton, W.

    2012-07-15

    Effects of finite ion temperature on magnetic island evolution are studied by means of numerical simulations of a reduced set of two-fluid equations which include ion as well as electron diamagnetism in slab geometry. The polarization current is found to be almost an order of magnitude larger in hot than in cold ion plasmas, due to the strong shear of ion velocity around the separatrix of the magnetic islands. As a function of the island width, the propagation speed decreases from the electron drift velocity (for islands thinner than the Larmor radius) to values close to the guiding-center velocity (for islands of order 10 times the Larmor radius). In the latter regime, the polarization current is destabilizing (i.e., it drives magnetic island growth). This is in contrast to cold ion plasmas, where the polarization current is generally found to have a healing effect on freely propagating magnetic island.

  4. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  5. Electrolysis on an Island Grid

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electrolysis on an Island Grid Mitch Ewan Hydrogen Systems Program Manager Hawaii Natural Energy Institute School of Ocean Earth Science and Technology University of Hawaii at Manoa 28 February 2014 High Percentages of As-Available Renewable Resources Creates Problems for Grid Systems 1300MW 75MW 5MW 200MW  Good renewable resource mix;  High electricity costs; and  Grid issues.  Provide unique opportunity for validation and deployment of new renewable and enabling technologies. 200MW

  6. The Three Mile Island crisis

    SciTech Connect (OSTI)

    Houts, P.S.; Cleary, P.D.; Hu, T.W.

    1988-01-01

    Since the March 1979 accident at the Three Mile Island (TMI) nuclear power plant, many studies have assessed its impacts. Compiled and summarized in this book are the results of five related surveys, all aimed at the scientific assessment of the psycho-socio-economic behavior of the residents around the TMI facility. These studies are based on a randomly selected, large sample of the population (with telephones) around TMI.

  7. Pathogenicity island mobility and gene content.

    SciTech Connect (OSTI)

    Williams, Kelly Porter

    2013-10-01

    Key goals towards national biosecurity include methods for analyzing pathogens, predicting their emergence, and developing countermeasures. These goals are served by studying bacterial genes that promote pathogenicity and the pathogenicity islands that mobilize them. Cyberinfrastructure promoting an island database advances this field and enables deeper bioinformatic analysis that may identify novel pathogenicity genes. New automated methods and rich visualizations were developed for identifying pathogenicity islands, based on the principle that islands occur sporadically among closely related strains. The chromosomally-ordered pan-genome organizes all genes from a clade of strains; gaps in this visualization indicate islands, and decorations of the gene matrix facilitate exploration of island gene functions. A %E2%80%9Clearned phyloblocks%E2%80%9D method was developed for automated island identification, that trains on the phylogenetic patterns of islands identified by other methods. Learned phyloblocks better defined termini of previously identified islands in multidrug-resistant Klebsiella pneumoniae ATCC BAA-2146, and found its only antibiotic resistance island.

  8. A signature for turbulence driven magnetic islands

    SciTech Connect (OSTI)

    Agullo, O.; Muraglia, M.; Benkadda, S.; Poyé, A.; Yagi, M.; Garbet, X.; Sen, A.

    2014-09-15

    We investigate the properties of magnetic islands arising from tearing instabilities that are driven by an interchange turbulence. We find that such islands possess a specific signature that permits an identification of their origin. We demonstrate that the persistence of a small scale turbulence maintains a mean pressure profile, whose characteristics makes it possible to discriminate between turbulence driven islands from those arising due to an unfavourable plasma current density gradient. We also find that the island poloidal turnover time, in the steady state, is independent of the levels of the interchange and tearing energy sources. Finally, we show that a mixing length approach is adequate to make theoretical predictions concerning island flattening in the island rotation frame.

  9. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  10. Energy Transition Initiative, Island Energy Snapshot - British Virgin Islands (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2015-03-01

    This profile provides a snapshot of the energy landscape of the British Virgin Islands (BVI), one of three sets of the Virgin Island territories in an archipelago making up the northern portion of the Lesser Antilles.

  11. The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs

    SciTech Connect (OSTI)

    Mandal, A.; Verma, U.; Halder, N.; Chakrabarti, S.

    2012-03-15

    Highlight: Black-Right-Pointing-Pointer Coupled InAs/GaAs MQDs with (In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As + GaAs) caps are considered. Black-Right-Pointing-Pointer Monolayer coverage, barrier thickness and growth rate of the dots are the factors. Black-Right-Pointing-Pointer PL peaks for the samples are within 1.1-1.3 {mu}m; significant for IBSCs and lasers. Black-Right-Pointing-Pointer NPTP (non-resonant multi-phonon assisted tunneling process) effect on FWHM of PL. -- Abstract: The self-assembled InAs/GaAs MQDs are widely investigated for their potential application in optoelectronic devices like lasers and photovoltaics. We have explored the effect of QD growth rate and structural parameters like capping layer thickness on the morphology and optical properties of the MQD heterostructures overgrown with a combination capping of InAlGaAs and GaAs. The growth rate of the seed layers in the MQD samples is also varied to investigate its effect in the vertical stacking of the islands. The change in the morphology and the optical properties of the samples due to variation in growth and structural parameters are explained by the presence of strain in the QD structures, which arises due to lattice mismatch.

  12. NREL: Technology Deployment - Technical Assistance for Islands

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Islands NREL provides technical assistance to help islands reduce dependence on fossil fuels and increase energy security by implementing energy efficiency measures and leveraging indigenous renewable resources. Hawaii NREL Helps Design LEED Platinum Affordable Housing U.S. Virgin Islands Landmark Solar Deal Completed with NREL Support This tailored technical assistance includes: Establishing baseline energy use Measuring available renewable resources Assessing the viability of various energy

  13. Offshore Islands Ltd | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: Offshore Islands Ltd Region: United States Sector: Marine and Hydrokinetic Website: http: This company is listed in the Marine and Hydrokinetic...

  14. Nauru Island Effect Detection Data Set

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Long, Chuck

    During Nauru99 it was noted that the island was producing small clouds that advected over the ARM site. The Nauru Island Effect Study was run for 1.5 years and the methodology developed to detect the occurrence. Nauru ACRF downwelling SW, wind direction, and air temperature data are used, along with downwelling SW data from Licor radiometers located on the southern end of the island near the airport landing strip. A statistical analysis and comparison of data from the two locations is used to detect the likely occurrence of an island influence on the Nauru ACRF site data

  15. Nauru Island Effect Detection Data Set

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Long, Chuck

    2010-07-15

    During Nauru99 it was noted that the island was producing small clouds that advected over the ARM site. The Nauru Island Effect Study was run for 1.5 years and the methodology developed to detect the occurrence. Nauru ACRF downwelling SW, wind direction, and air temperature data are used, along with downwelling SW data from Licor radiometers located on the southern end of the island near the airport landing strip. A statistical analysis and comparison of data from the two locations is used to detect the likely occurrence of an island influence on the Nauru ACRF site data

  16. Freedom Energy (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

    Freedom Energy Place: Rhode Island Website: www.freedomenergytechnologies. Facebook: https:www.facebook.comFreedomEnergyTechnologies References: EIA Form EIA-861 Final Data File...

  17. GEXA Corp. (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

    GEXA Corp. Place: Rhode Island Website: www.gexaenergy.com Twitter: @nationalgridus Facebook: https:www.facebook.comnationalgrid Outage Hotline: 1-800-465-1212 Outage Map:...

  18. Block Island Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    energy Facility Type Commercial Scale Wind Facility Status Proposed Developer Deepwater Wind Location Offshore from Block Island RI Coordinates 41.1, -71.53 Show Map Loading...

  19. ,"Rhode Island Natural Gas Industrial Consumption (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Rhode Island Natural Gas Industrial Consumption (MMcf)",1,"Monthly","102015" ,"Release Date:","12312015" ,"Next...

  20. Prairie Island Indian Community | Department of Energy

    Office of Environmental Management (EM)

    Prairie Island Indian Community (1.42 MB) More Documents & Publications Shipping Radioactive Waste by Rail from Brookhaven National Laboratory Nuclear Fuel Storage and ...

  1. Asian American Pacific Islander Heritage Month

    Broader source: Energy.gov [DOE]

    Generations of Asian Americans and Pacific Islanders (AAPIs) have helped make America what it is today. Their histories recall bitter hardships and proud accomplishments -- from the laborers who...

  2. Marshall Islands: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Marshall Islands Population 56,429 GDP Unavailable Energy Consumption Quadrillion Btu 2-letter ISO code MH 3-letter ISO code MHL Numeric ISO code...

  3. Cayman Islands: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Cayman Islands Population Unavailable GDP Unavailable Energy Consumption Quadrillion Btu 2-letter ISO code KY 3-letter ISO code CYM Numeric ISO code...

  4. Aeromagnetic Survey And Interpretation, Ascention Island, South...

    Open Energy Info (EERE)

    And Interpretation, Ascention Island, South Atlantic Ocean Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article: Aeromagnetic Survey And...

  5. Bluewater Wind Rhode Island | Open Energy Information

    Open Energy Info (EERE)

    Island Sector Wind energy Facility Type Offshore Wind Facility Status Proposed Owner NRG Bluewater Wind Developer NRG Bluewater Wind Location Atlantic Ocean RI Coordinates...

  6. Mountain Island Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Mountain Island Energy, LLC Place: Soda Springs, Idaho Zip: 83276 Product: Energy and mining development company focused on next generation "clean technology". References:...

  7. Climate change: Effects on reef island resources

    SciTech Connect (OSTI)

    Oberdorfer, J.A.; Buddemeier, R.W.

    1988-06-27

    The salinity, depth, quantity, and reliability of fresh groundwater resources on coral reef islands and coastlines are environmentally important parameters. Groundwater influences or controls the terrestrial flora, salinity, and nutrient levels in the near-shore benthic environment, the rate and nature of sediment diagenesis, and the density of human habitation. Data from a number of Indo-Pacific reef islands suggest that freshwater inventory is a function of rainfall and island dimensions. A numerical model (SUTRA) has been used to simulate the responses of atoll island groundwater to changes in recharge (precipitation), sea level, and loss of island area due to flooding. The model has been calibrated for Enjebi Island, Enewetak Atoll, where a moderately permeable, water-table aquifer overlies a high-permeability formation. Total freshwater inventory is a monotonic but nonlinear function of recharge. If recharge and island area are constant, rising sea level increases the inventory of fresh water by increasing the useful volume of the aquifer above the high-permeability zone. Flooding of land area reduces the total freshwater inventory approximately in proportion to the loss of recharge area. The most significant results of the model simulation, however, are the findings that the inventory of low-salinity water (and by extrapolation, potable water) is disproportionately sensitive to changes in recharge, island dimensions, or recharge. Island freshwater resources may therefore be unexpectedly vulnerable to climate change.

  8. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  9. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  10. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  11. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  12. Price of Elba Island, GA Natural Gas LNG Imports from Egypt ...

    U.S. Energy Information Administration (EIA) Indexed Site

    Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 11.33 6.74 6.81 9.36 3.72 2010's 4.50 3.97 2.52 -- --

  13. Elba Island, GA LNG Imports (Price) from Qatar (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's -- 4.69 2.84 3.45 --

  14. Elba Island, GA LNG Imports (Price) from Qatar (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5.09 5.13 5.10 4.52 4.45 4.14 4.01 2012 3.65 2.94 2.17 2.00 2.82 3.09 2.67 3.10 3.61 2013 3.34 3.57

  15. Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's 5.12 6.47 9.18 7.03 6.79 9.71 3.73 2010's 4.39 4.20 2.78 3.36 4.33 2.83

  16. Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 4.36 4.82 4.58 3.91 2015 3.08 2.74 2.76 2.76 2016 1.52

  17. Price of Elba Island, GA Natural Gas LNG Imports from Egypt (Nominal

    U.S. Energy Information Administration (EIA) Indexed Site

    Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 4.21 3.67 4.14 4.29 4.22 3.22 2012 2.52

  18. Price of Elba Island, GA Natural Gas LNG Imports from Trinidad and Tobago

    U.S. Energy Information Administration (EIA) Indexed Site

    (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's NA 2000's NA 1.92 3.51 5.12 6.47 8.59 7.14 6.85 9.88 3.75 2010's 4.28 3.86 2.71 3.28 4.33 2.83

  19. Price of Elba Island, GA Natural Gas LNG Imports from Trinidad and Tobago

    U.S. Energy Information Administration (EIA) Indexed Site

    (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 4.15 3.71 4.31 3.78 3.26 3.26 2012 2.30 1.87 2.28 2.64 2.89 2.49 3.62 2013 3.25 3.12 3.48 2014 4.36 4.82 4.58 3.91 2015 3.08 2.74 2.76 2.76 2016 1.52

  20. Minnesota Nuclear Profile - Prairie Island

    U.S. Energy Information Administration (EIA) Indexed Site

    Prairie Island" "Unit","Summer capacity (mw)","Net generation (thousand mwh)","Summer capacity factor (percent)","Type","Commercial operation date","License expiration date" 1,521,"4,655",102.0,"PWR","application/vnd.ms-excel","application/vnd.ms-excel" 2,519,"4,128",90.8,"PWR","application/vnd.ms-excel","application/vnd.ms-excel"

  1. Energy Transition Initiative, Island Energy Snapshot - Grenada (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2015-03-01

    This profile provides a snapshot of the energy landscape of Grenada - a small island nation consisting of the island of Grenada and six smaller islands in the southeastern Caribbean Sea - three of which are inhabited: Grenada, Carriacou, and Petite Martinique.

  2. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  3. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  4. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect (OSTI)

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  5. Bell Island Space Heating Low Temperature Geothermal Facility...

    Open Energy Info (EERE)

    Space Heating Low Temperature Geothermal Facility Jump to: navigation, search Name Bell Island Space Heating Low Temperature Geothermal Facility Facility Bell Island Sector...

  6. United States Virgin Islands: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    (CLEAN Partner Activity) Energy Incentives for United States Virgin Islands Solar Water Heater Rebate Program (U.S. Virgin Islands) Southern States Energy Compact (Multiple...

  7. Verdant-Roosevelt Island Tidal Energy | Open Energy Information

    Open Energy Info (EERE)

    Verdant-Roosevelt Island Tidal Energy Jump to: navigation, search Retrieved from "http:en.openei.orgwindex.php?titleVerdant-RooseveltIslandTidalEnergy&oldid680702" ...

  8. Islanded Grid Wind Power Workshop | Department of Energy

    Energy Savers [EERE]

    The event will provide an opportunity for attendees to learn, network, and share information on wind systems in island and islanded grid environments through expert panel ...

  9. Canary Islands Institute of Technology ITC | Open Energy Information

    Open Energy Info (EERE)

    Canary Islands Institute of Technology ITC Jump to: navigation, search Name: Canary Islands Institute of Technology (ITC) Place: Las Palmas, Spain Zip: 35119 Product: Las...

  10. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  11. Working Groups Collaborate on U.S. Virgin Islands Clean Energy Vision and Road Map

    Broader source: Energy.gov [DOE]

    Energy Transition Initiative: Islands lesson learned detailing work done in the U.S. Virgin Islands.

  12. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  13. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  14. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  15. March 28, 1979: Three Mile Island | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8, 1979: Three Mile Island March 28, 1979: Three Mile Island March 28, 1979: Three Mile Island March 28, 1979 A partial meltdown of the core occurs at one of the two reactors at the Three Mile Island nuclear power plant near Harrisburg, Pennsylvania

  16. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  17. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect (OSTI)

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  18. Long Island Smart Energy Corridor

    SciTech Connect (OSTI)

    Mui, Ming

    2015-02-04

    The Long Island Power Authority (LIPA) has teamed with Stony Brook University (Stony Brook or SBU) and Farmingdale State College (Farmingdale or FSC), two branches of the State University of New York (SUNY), to create a “Smart Energy Corridor.” The project, located along the Route 110 business corridor on Long Island, New York, demonstrated the integration of a suite of Smart Grid technologies from substations to end-use loads. The Smart Energy Corridor Project included the following key features: -TECHNOLOGY: Demonstrated a full range of smart energy technologies, including substations and distribution feeder automation, fiber and radio communications backbone, advanced metering infrastructure (AM”), meter data management (MDM) system (which LIPA implemented outside of this project), field tools automation, customer-level energy management including automated energy management systems, and integration with distributed generation and plug-in hybrid electric vehicles. -MARKETING: A rigorous market test that identified customer response to an alternative time-of-use pricing plan and varying levels of information and analytical support. -CYBER SECURITY: Tested cyber security vulnerabilities in Smart Grid hardware, network, and application layers. Developed recommendations for policies, procedures, and technical controls to prevent or foil cyber-attacks and to harden the Smart Grid infrastructure. -RELIABILITY: Leveraged new Smart Grid-enabled data to increase system efficiency and reliability. Developed enhanced load forecasting, phase balancing, and voltage control techniques designed to work hand-in-hand with the Smart Grid technologies. -OUTREACH: Implemented public outreach and educational initiatives that were linked directly to the demonstration of Smart Grid technologies, tools, techniques, and system configurations. This included creation of full-scale operating models demonstrating application of Smart Grid technologies in business and residential

  19. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  20. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  1. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  2. Categorical Exclusion Determinations: Rhode Island | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The New England Solar cost-Reduction Challenge Partnership CX(s) Applied: A9, A11 Date: 08152013 Location(s): Vermont, New Hampshire, Rhode Island, Massachusetts, Connecticut ...

  3. Rhode Island Renewable Energy Fund (RIREF)

    Broader source: Energy.gov [DOE]

    Rhode Island's PBF is supported by a surcharge on electric and gas customers' bills. Initially, the surcharge was was set at $0.0023 per kilowatt-hour (2.3 mills per kWh) and applied only to...

  4. Community Redevelopment Case Study: Jekyll Island

    Broader source: Energy.gov [DOE]

    Presentation—given at the April 2012 Federal Utility Partnership Working Group (FUPWG) meeting—features photos from a case study about Jekyll Island's community redevelopment project in Georgia.

  5. Aleutian Pribilof Islands Association- 2005 Project

    Broader source: Energy.gov [DOE]

    The Aleutian Pribilof Islands Association (APIA) was chartered as a nonprofit organization in 1976 and is a federally recognized tribal organization of the Aleut people. APIA will conduct an...

  6. N. Mariana Islands- Renewables Portfolio Standard

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Commonwealth of the Northern Mariana Islands enacted its Renewables Portfolio Standard in September 2007, in which a certain percentage of its net electricity sales must come from renewable e...

  7. U.S. Virgin Islands- Net Metering

    Broader source: Energy.gov [DOE]

    In February 2007, the U.S. Virgin Islands Public Services Commission approved a limited net-metering program for residential and commercial photovoltaic (PV), wind-energy or other renewable energ...

  8. Solomon Islands: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Solomon Islands Population 523,000 GDP 840,000,000 Energy Consumption 0.00 Quadrillion Btu 2-letter ISO code SB 3-letter ISO code SLB Numeric ISO...

  9. Faroe Islands: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Faroe Islands Population 48,351 GDP 2,450,000,000 Energy Consumption 0.01 Quadrillion Btu 2-letter ISO code FO 3-letter ISO code FRO Numeric ISO...

  10. Energy Department Helps Rhode Island Schools Teach Energy Essentials |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Rhode Island Schools Teach Energy Essentials Energy Department Helps Rhode Island Schools Teach Energy Essentials September 21, 2015 - 4:17pm Addthis Students participating in the NEED Project at Scituate High and Calcutt Middle Schools planted 14 trees in Central Falls, Rhode Island. Students participating in the NEED Project at Scituate High and Calcutt Middle Schools planted 14 trees in Central Falls, Rhode Island. Calcutt Middle School students in Rhode Island played

  11. Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Across the State Rhode Island EV Initiative Adds Chargers Across the State to someone by E-mail Share Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers Across the State on Facebook Tweet about Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers Across the State on Twitter Bookmark Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers Across the State on Google Bookmark Alternative Fuels Data Center: Rhode Island EV Initiative Adds

  12. Celebrating Asian American Pacific Islander Heritage Month at the Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department | Department of Energy Celebrating Asian American Pacific Islander Heritage Month at the Energy Department Celebrating Asian American Pacific Islander Heritage Month at the Energy Department May 1, 2014 - 4:22pm Addthis Celebrating Asian American Pacific Islander Heritage Month at the Energy Department Each May we celebrate Asian American and Pacific Islander Heritage Month, honoring the accomplishments of Asian Americans, Native Hawaiians, and Pacific Islanders at the Energy

  13. EERE Success Story-Rhode Island Schools Teach Energy Essentials |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Rhode Island Schools Teach Energy Essentials EERE Success Story-Rhode Island Schools Teach Energy Essentials December 10, 2015 - 11:24am Addthis Students participating in the NEED Project at Scituate High and Calcutt Middle Schools planted 14 trees in Central Falls, Rhode Island. Photo Courtesy | Rhode Island Public Schools Students participating in the NEED Project at Scituate High and Calcutt Middle Schools planted 14 trees in Central Falls, Rhode Island. Photo

  14. Interconnecting gold islands with DNA origami

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Interconnecting gold islands with DNA origami Authors: Ding, B., Wu, H., Xu, W., Zhao, Z., Liu, Y., Yu, H., and Yan, H. Title: Interconnecting gold islands with DNA origami Source: Nano Lett. Year: 2010 Volume: 10 Pages: 5065-5069 ABSTRACT: Scaffolded DNA origami has recently emerged as a versatile, programmable method to fold DNA into arbitrarily shaped nanostructures that are spatially addressable, with sub-10-nm resolution. Toward functional DNA nanotechnology, one of the key challenges is to

  15. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  16. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  17. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect (OSTI)

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  18. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  19. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  20. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  1. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect (OSTI)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  2. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  3. EVERETT L. REDMOND II Senior Director, Policy Development

    Energy Savers [EERE]

    ... The industry has twice paid its share of the funds necessary to clean-up the GDP facilities - payment was received as part of the price for DOE uranium enrichment services from the ...

  4. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)

    SciTech Connect (OSTI)

    Yitamben, E.N.; Arena, D.; Lovejoy, T.C.; Pakhomov, A.B.; Heald, S.M.; Negusse, E.; Ohuchi, F.S.; Olmstead, M.A.

    2011-01-28

    Chromium-doped gallium sesquiselenide, Cr:Ga{sub 2}Se{sub 3}, is a member of a new class of dilute magnetic semiconductors exploiting intrinsic vacancies in the host material. The correlation among room-temperature ferromagnetism, surface morphology, electronic structure, chromium concentration, and local chemical and structural environments in Cr:Ga{sub 2}Se{sub 3} films grown epitaxially on silicon is investigated with magnetometry, scanning tunneling microscopy, photoemission spectroscopy, and x-ray absorption spectroscopy. Inclusion of a few percent chromium in Ga{sub 2}Se{sub 3} results in laminar, semiconducting films that are ferromagnetic at room temperature with a magnetic moment 4{micro}{sub B}/Cr. The intrinsic-vacancy structure of defected-zinc-blende {beta}-Ga{sub 2}Se{sub 3} enables Cr incorporation in a locally octahedral site without disrupting long-range order, determined by x-ray absorption spectroscopy, as well as strong overlap between Cr 3d states and the Se 4p states lining the intrinsic-vacancy rows, observed with photoemission. The highest magnetic moment per Cr is observed near the solubility limit of roughly one Cr per three vacancies. At higher Cr concentrations, islanded, metallic films result, with a magnetic moment that depends strongly on surface morphology. The effective valence is Cr{sup 3+} in laminar films, with introduction of Cr{sup 0} upon islanding. A mechanism is proposed for laminar films whereby ordered intrinsic vacancies mediate ferromagnetism.

  5. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  6. Sculpting the shape of semiconductor heteroepitaxial islands: fromdots to rods

    SciTech Connect (OSTI)

    Robinson, J.T.; Walko, D.A.; Arms, D.A.; Tinberg, D.S.; Evans,P.G.; Cao, Y.; Liddle, J.A.; Rastelli, A.; Schmidt, O.G.; Dubon, O.D.

    2006-06-20

    In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.

  7. The Pd/Fe Interface in the Epitaxial System Pd/Fe/GaAs(001)- 4 x 6

    SciTech Connect (OSTI)

    Budnik, P.S.; Gordon, R.A.; Crozier, E.D.

    2007-01-18

    Magnetic properties of thin magnetic films are strongly affected by the nature of the interface between magnetic and non-magnetic layers. In spintronic devices the extent to which spins are scattered at an interface depends upon interfacial roughness, alloying, and impurities. We present a polarization-dependent XAFS study of a 1Pd/9Fe/GaAs(001)-(4 x 6) structure grown in situ in the MBE facility at the PNC/XOR, APS. To increase the interfacial roughness, the 1ML Pd was grown on the 9 ML Fe without first sputtering and annealing the Fe. An estimate of interfacial roughness, evidence for formation of Pd islands, their height, and the amount of As floating to the Pd surface from the GaAs are given.

  8. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  9. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  10. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  11. New methanol plant for Kharg Island

    SciTech Connect (OSTI)

    Alperowicz, N.

    1992-04-08

    Iran`s National Petrochemical Co. (NPC; Teheran) plans to set up a world scale export-oriented methanol plant on Kharg Island in the Persian Gulf. It says discussions are being held with three Western groups - C. Itoh (Tokyo), H & G (London), and Uhde (Dortmund) - to supply the 660,000-m.t./year facility. The estimated $150-million project would be repaid through export of methanol within three to four years. NPC hopes to conclude talks this year. Strategically located, Kharg Island is described as a good location in peacetime. It already serves as an oil terminal. NPC has an LPG and sulfur complex there.

  12. Eastern North Atlantic Site, Graciosa Island, Azores

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govSitesEastern North Atlantic ENA Related Links Facilities and Instruments ES&H Guidance Statement Operations Science Field Campaigns Visiting the Site ENA Fact Sheet (PDF, 512KB) Images Information for Guest Scientists Contacts Eastern North Atlantic This view shows Graciosa Island, Azores, Eastern North Atlantic Facility. Graciosa Island: 39° 5' 29.68" N, 28° 1' 32.34" W Altitude: 30.48 meters The new ENA observations site will be situated near the previous AMF deployment. The

  13. Hess Retail Natural Gas and Elec. Acctg. (Rhode Island) | Open...

    Open Energy Info (EERE)

    Rhode Island) Jump to: navigation, search Name: Hess Retail Natural Gas and Elec. Acctg. Place: Rhode Island References: EIA Form EIA-861 Final Data File for 2010 - File220101...

  14. Thermal island destabilization and the Greenwald limit (Journal...

    Office of Scientific and Technical Information (OSTI)

    Because field lines in an island are isolated from the outside plasma, an island can heat or cool preferentially depending on the balance of Ohmic heating and radiation loss in the ...

  15. Washington Island El Coop, Inc | Open Energy Information

    Open Energy Info (EERE)

    Washington Island El Coop, Inc Jump to: navigation, search Name: Washington Island El Coop, Inc Place: Wisconsin Phone Number: 920-847-2541 Website: wiecoop.com Outage Hotline:...

  16. Prince Edward Island: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Prince Edward Island: Energy Resources Jump to: navigation, search Name Prince Edward Island, Canada Equivalent URI DBpedia GeoNames ID 6113358 Coordinates 46.333333, -63.5...

  17. ARM Climate Modeling Best Estimate From Manus Island, PNG (ARMBE...

    Office of Scientific and Technical Information (OSTI)

    From Manus Island, PNG (ARMBE-ATM TWPC1) Title: ARM Climate Modeling Best Estimate From Manus Island, PNG (ARMBE-ATM TWPC1) The ARM CMBE-ATM Xie, McCoy, Klein et al. data file ...

  18. Noble Americas Energy Solutions LLC (Rhode Island) | Open Energy...

    Open Energy Info (EERE)

    Rhode Island) Jump to: navigation, search Name: Noble Americas Energy Solutions LLC Place: Rhode Island Phone Number: 1 877-273-6772 Website: noblesolutions.com Outage Hotline: 1...

  19. U.S. Virgin Islands Leadership Embraces Inclusiveness to Ensure...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    in Island Nations), U.S. Virgin Islands A 448-kW PV system installed at the Cyril E. King Airport on St. Thomas in April 2011. Photo by Adam Warren, NREL 18953 U.S. ...

  20. United States Virgin Islands: St. Thomas (Bovoni) & St. Croix (Longford)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Roberts, O.; Andreas, A.

    Two measurement stations to collect wind data to support future wind power generation in the U.S. Virgin Islands.

  1. Alternative Fuels Data Center: Rhode Island Transportation Data for

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Alternative Fuels and Vehicles Rhode Island Transportation Data for Alternative Fuels and Vehicles to someone by E-mail Share Alternative Fuels Data Center: Rhode Island Transportation Data for Alternative Fuels and Vehicles on Facebook Tweet about Alternative Fuels Data Center: Rhode Island Transportation Data for Alternative Fuels and Vehicles on Twitter Bookmark Alternative Fuels Data Center: Rhode Island Transportation Data for Alternative Fuels and Vehicles on Google Bookmark

  2. A Presidential Proclamation - Asian American and Pacific Islander Heritage

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Month | Department of Energy A Presidential Proclamation - Asian American and Pacific Islander Heritage Month A Presidential Proclamation - Asian American and Pacific Islander Heritage Month May 1, 2013 - 9:25am Addthis A Presidential Proclamation - Asian American and Pacific Islander Heritage Month BY THE PRESIDENT OF THE UNITED STATES OF AMERICA A PROCLAMATION Each May, our Nation comes together to recount the ways Asian Americans and Pacific Islanders (AAPIs) helped forge our country. We

  3. Post-Closure Monitoring and Inspection Plan for Amchitka Island...

    Office of Legacy Management (LM)

    Amchitka Island ......7 2.1.2 Project Personnel ......* Supporting information to help forecast future site surveillance and monitoring ...

  4. Foster-Glocester Regional School District (Rhode Island) - Financing Profile

    SciTech Connect (OSTI)

    none,

    2008-12-01

    This document is an EnergySmart Schools Financing Profile of Foster-Glocester Regional School District in Rhode Island

  5. United States Virgin Islands: St. Thomas (Bovoni) & St. Croix (Longford)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Roberts, O.; Andreas, A.

    1997-01-01

    Two measurement stations to collect wind data to support future wind power generation in the U.S. Virgin Islands.

  6. Island Energy Tools and Trainings | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Transition Initiative » Island Energy Tools and Trainings Island Energy Tools and Trainings Islands can use the tools below to gather data for decision makers and run scenarios on potential energy investments. Tailored trainings provide in-person, onsite guidance and best practices for implementing clean energy solutions. Tools Island Energy Scenario Tool The ETI Energy Scenario Tool helps communities analyze different pathways to meet a given energy transition goal by modeling the

  7. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  8. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  9. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  10. Bainbridge Island Summary of Reported Data | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Summary of Reported Data Bainbridge Island Summary of Reported Data Summary of data for Bainbridge Island, a partner in the U.S. Department of Energy's Better Buildings Neighborhood Program. Bainbridge Island Summary of Reported Data (1.44 MB) More Documents & Publications Washington -- SEP Summary of Reported Data NYSERDA Summary of Reported Data Camden, New Jersey Summary of Reported Data

  11. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  12. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  13. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  14. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  15. Big Island Demonstration Project - Black Liquor

    SciTech Connect (OSTI)

    2006-08-01

    Black liquor is a papermaking byproduct that also serves as a fuel for pulp and paper mills. This project involves the design, construction, and operation of a black liquor gasifier that will be integrated into Georgia-Pacific's Big Island facility in Virginia, a mill that has been in operation for more than 100 years.

  16. Energy Transition Initiative: Islands Playbook (Book)

    SciTech Connect (OSTI)

    Not Available

    2015-01-01

    The Island Energy Playbook (the Playbook) provides an action-oriented guide to successfully initiating, planning, and completing a transition to an energy system that primarily relies on local resources to eliminate a dependence on one or two imported fuels. It is intended to serve as a readily available framework that any community can adapt to organize its own energy transition effort.

  17. Asian American and Pacific Islander Heritage Month

    Broader source: Energy.gov [DOE]

    A celebration of Asians and Pacific Islanders in the United States. The month of May was chosen to commemorate the immigration of the first Japanese to the United States on May 7, 1843, and to mark the anniversary of the completion of the transcontinental railroad on May 10, 1869. The majority of the workers who laid the tracks were Chinese immigrants.

  18. Philippine Islands: a tectonic railroad siding

    SciTech Connect (OSTI)

    Gallagher, J.J. Jr.

    1984-09-01

    In 1976, significant quantities of oil were discovered offshore northwest of Palawan Island by a Philippine-American consortium led by Philippines-Cities Service Inc. This was the first commercial oil found in the Philippine Islands. Other exploration companies had decided that there was no commercial oil in the Philippines. They fell prey to a situation Wallace E. Pratt, who began his career in 1909 in the Philippines, later described: There are many instances where our knowledge, supported in some cases by elaborate and detailed studies has convinced us that no petroleum resources were present in areas which subsequently became sites of important oil fields. Some explorers are blinded by the negative implications of the same knowledge that successful explorers use to find important oil fields. The Palawan discoveries are examples of successful use of knowledge. Recognition that the Philippine Islands are a tectonic railroad siding may be the key to future exploration success. These islands are continental fragments, each with its own individual geologic characteristics, that have moved from elsewhere to their present positions along a major strike-slip zone. Play concepts can be developed in the Philippines for continental fragments in each of the three major present-day tectono-stratigraphic systems that are dominated by strike-slip, but include subduction and extension tectonics, with both carbonate and clastic sediments.

  19. Aleutian Pribilof Islands Association- 2010 Project

    Broader source: Energy.gov [DOE]

    The Aleutian Pribilof Islands Association, Inc. (APIA) will conduct on-site weatherization and energy conservation education and a home energy and safety review in the communities of Akutan, Atka, False Pass, King Cove, Nelson Lagoon, Nikolski, Sand Point, St. George, St. Paul, and Unalaska.

  20. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  1. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  2. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  3. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  4. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  5. Geohydrology of Enewetak Atoll islands and reefs

    SciTech Connect (OSTI)

    Buddemeier, R.W.

    1981-05-06

    Extensive tidal studies in island wells and the lagoon at Enewetak Atoll have shown that island ground water dynamics are controlled by a layered aquifer system. The surface aquifer of unconsolidated Holocene material extends to a depth of approximately 15 m, and has a hydraulic conductivity K = 60 m/day. From 15 to 60 m (approximate lagoon depth) the reef structure consists of successive layers of altered Pleistocene materials, with bulk permeability substantially higher than that of the surface aquifer. Because of wave set-up over the windward reef and the limited pass area for outflow at the south end of the atoll, lagoon tides rise in phase with the ocean tides but fall later than the ocean water level. This results in a net lagoon-to-ocean head which can act as the driving force for outflow through the permeable Pleistocene aquifer. This model suggests that fresh water, nutrients or radioactive contaminants found in island ground water or reef interstitial water may be discharged primarily into the ocean rather than the lagoon. Atoll island fresh water resources are controlled by recharge, seawater dilution due to vertical tidal mixing between the surface and deeper aquifers, and by loss due to entrainment by the outflowing water in the deeper aquifers. Estimated lagoon-ot-ocean transit times through the deep aquifer are on the order of a few years, which corresponds well to the freshwater residence time estimates based on inventory and recharge. Islands in close proximity to reef channels have more fresh ground water than others, which is consistent with a locally reduced hydraulic gradient and slower flow through the Pleistocene aquifers.

  6. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  7. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  8. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  9. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  10. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  11. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  12. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  13. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  14. Genomic Island Identification Software v 1.0

    SciTech Connect (OSTI)

    2014-08-25

    Genomic islands are key mobile DNA elements in bacterial evolution, that can distinguish pathogenic strains from each other, or distinguish pathogenic strains from non-pathogenic strains. Their detection in genomes is a challenging problem. We present 3 main software components that attack the island detection problem on two different bases: 1) the preference of islands to insert in chromosomal tRNA or tmRNA genes (islander.pl), and 2) islands? sporadic occurrence among closely related strains. The latter principle is employed in both an algorithm (learnedPhyloblocks.pl) and a visualization method (panGenome.pl). Component islander.pl finds islands based on their preference for a particular target gene type. We annotate each tRNA and tmRNA gene, find fragments of each such gene as candidates for the distal ends of islands, and filter candidates to remove false positives. Component learnedPhyloblocks.pl uses islands found by islander.pl and other methods as a training set to find new islands. Reference genomes are aligned using mugsy, then the ?phylotypes? or patterns of occurrence in the reference set are determined for each position in the target genome, and those phylotypes most enriched in the training set of islands are followed to detect yet more islands. Component panGenome.pl produces a big-data visualization of the chromosomally-ordered ?pan-genome?, that includes every gene of every reference genome (x-axis, pan-genome order; y-axis, reference genomes; color-coding, gene presence/absence etc.), islands appearing as dark patches.

  15. Genomic Island Identification Software v 1.0

    Energy Science and Technology Software Center (OSTI)

    2014-08-25

    Genomic islands are key mobile DNA elements in bacterial evolution, that can distinguish pathogenic strains from each other, or distinguish pathogenic strains from non-pathogenic strains. Their detection in genomes is a challenging problem. We present 3 main software components that attack the island detection problem on two different bases: 1) the preference of islands to insert in chromosomal tRNA or tmRNA genes (islander.pl), and 2) islands’ sporadic occurrence among closely related strains. The latter principlemore » is employed in both an algorithm (learnedPhyloblocks.pl) and a visualization method (panGenome.pl). Component islander.pl finds islands based on their preference for a particular target gene type. We annotate each tRNA and tmRNA gene, find fragments of each such gene as candidates for the distal ends of islands, and filter candidates to remove false positives. Component learnedPhyloblocks.pl uses islands found by islander.pl and other methods as a training set to find new islands. Reference genomes are aligned using mugsy, then the “phylotypes” or patterns of occurrence in the reference set are determined for each position in the target genome, and those phylotypes most enriched in the training set of islands are followed to detect yet more islands. Component panGenome.pl produces a big-data visualization of the chromosomally-ordered “pan-genome”, that includes every gene of every reference genome (x-axis, pan-genome order; y-axis, reference genomes; color-coding, gene presence/absence etc.), islands appearing as dark patches.« less

  16. Islander: A database of precisely mapped genomic islands in tRNA and tmRNA genes

    SciTech Connect (OSTI)

    Hudson, Corey M.; Lau, Britney Y.; Williams, Kelly P.

    2014-11-05

    Genomic islands are mobile DNAs that are major agents of bacterial and archaeal evolution. Integration into prokaryotic chromosomes usually occurs site-specifically at tRNA or tmRNA gene (together, tDNA) targets, catalyzed by tyrosine integrases. This splits the target gene, yet sequences within the island restore the disrupted gene; the regenerated target and its displaced fragment precisely mark the endpoints of the island. We applied this principle to search for islands in genomic DNA sequences. Our algorithm identifies tDNAs, finds fragments of those tDNAs in the same replicon and removes unlikely candidate islands through a series of filters. A search for islands in 2168 whole prokaryotic genomes produced 3919 candidates. The website Islander (recently moved to http://bioinformatics.sandia.gov/islander/) presents these precisely mapped candidate islands, the gene content and the island sequence. The algorithm further insists that each island encode an integrase, and attachment site sequence identity is carefully noted; therefore, the database also serves in the study of integrase site-specificity and its evolution.

  17. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  18. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  19. Recovery Act State Memos Mariana Islands

    Broader source: Energy.gov (indexed) [DOE]

    Mariana Islands For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  20. Recovery Act State Memos Rhode Island

    Broader source: Energy.gov (indexed) [DOE]

    Rhode Island For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  1. Recovery Act State Memos Virgin Islands

    Broader source: Energy.gov (indexed) [DOE]

    Virgin Islands For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  2. Pennsylvania Nuclear Profile - Three Mile Island

    U.S. Energy Information Administration (EIA) Indexed Site

    Three Mile Island" "Unit","Summer capacity (mw)","Net generation (thousand mwh)","Summer capacity factor (percent)","Type","Commercial operation date","License expiration date" 1,805,"6,634",94.1,"PWR","application/vnd.ms-excel","application/vnd.ms-excel" ,805,"6,634",94.1

  3. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  4. Suggested guidelines for anti-islanding screening.

    SciTech Connect (OSTI)

    Ellis, Abraham; Ropp, Michael

    2012-02-01

    As increasing numbers of photovoltaic (PV) systems are connected to utility systems, distribution engineers are becoming increasingly concerned about the risk of formation of unintentional islands. Utilities desire to keep their systems secure, while not imposing unreasonable burdens on users wishing to connect PV. However, utility experience with these systems is still relatively sparse, so distribution engineers often are uncertain as to when additional protective measures, such as direct transfer trip, are needed to avoid unintentional island formation. In the absence of such certainty, utilities must err on the side of caution, which in some cases may lead to the unnecessary requirement of additional protection. The purpose of this document is to provide distribution engineers and decision makers with guidance on when additional measures or additional study may be prudent, and also on certain cases in which utilities may allow PV installations to proceed without additional study because the risk of an unintentional island is extremely low. The goal is to reduce the number of cases of unnecessary application of additional protection, while giving utilities a basis on which to request additional study in cases where it is warranted.

  5. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  6. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  7. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  8. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  9. Islander: A database of precisely mapped genomic islands in tRNA and tmRNA genes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hudson, Corey M.; Lau, Britney Y.; Williams, Kelly P.

    2014-11-05

    Genomic islands are mobile DNAs that are major agents of bacterial and archaeal evolution. Integration into prokaryotic chromosomes usually occurs site-specifically at tRNA or tmRNA gene (together, tDNA) targets, catalyzed by tyrosine integrases. This splits the target gene, yet sequences within the island restore the disrupted gene; the regenerated target and its displaced fragment precisely mark the endpoints of the island. We applied this principle to search for islands in genomic DNA sequences. Our algorithm identifies tDNAs, finds fragments of those tDNAs in the same replicon and removes unlikely candidate islands through a series of filters. A search for islandsmore » in 2168 whole prokaryotic genomes produced 3919 candidates. The website Islander (recently moved to http://bioinformatics.sandia.gov/islander/) presents these precisely mapped candidate islands, the gene content and the island sequence. The algorithm further insists that each island encode an integrase, and attachment site sequence identity is carefully noted; therefore, the database also serves in the study of integrase site-specificity and its evolution.« less

  10. SURFACE REMEDIATION IN THE ALEUTIAN ISLANDS: A CASE STUDY OF AMCHITKA ISLAND, ALASKA

    SciTech Connect (OSTI)

    Giblin, M. O.; Stahl, D. C.; Bechtel, J. A.

    2002-02-25

    Amchitka Island, Alaska, was at one time an integral player in the nation's defense program. Located in the North Pacific Ocean in the Aleutian Island archipelago, the island was intermittently inhabited by several key government agencies, including the U.S. Army, the U.S. Atomic Energy Commission (predecessor agency to the U.S. Department of Energy), and the U.S. Navy. Since 1993, the U.S. Department of Energy (DOE) has conducted extensive investigations on Amchitka to determine the nature and extent of contamination resulting from historic nuclear testing. The uninhabited island was the site of three high-yield nuclear tests from 1965 to 1971. These test locations are now part of the DOE's National Nuclear Security Administration Nevada Operations Office's Environmental Management Program. In the summer of 2001, the DOE launched a large-scale remediation effort on Amchitka to perform agreed-upon corrective actions to the surface of the island. Due to the lack of resources available on Amchitka and logistical difficulties with conducting work at such a remote location, the DOE partnered with the Navy and U.S. Army Corps of Engineers (USACE) to share certain specified costs and resources. Attempting to negotiate the partnerships while organizing and implementing the surface remediation on Amchitka proved to be a challenging endeavor. The DOE was faced with unexpected changes in Navy and USACE scope of work, accelerations in schedules, and risks associated with construction costs at such a remote location. Unfavorable weather conditions also proved to be a constant factor, often slowing the progress of work. The Amchitka Island remediation project experience has allowed the DOE to gain valuable insights into how to anticipate and mitigate potential problems associated with future remediation projects. These lessons learned will help the DOE in conducting future work more efficiently, and can also serve as a guide for other agencies performing similar work.

  11. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  12. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect (OSTI)

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  13. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  14. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  15. Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

    SciTech Connect (OSTI)

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-15

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

  16. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  17. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  18. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

    SciTech Connect (OSTI)

    Plankina, S. M.; Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Kalentyeva, I. L.; Nezhdanov, A. V.; Chunin, I. I.; Yunin, P. A.

    2015-01-15

    The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

  19. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  20. Aleutian Pribilof Islands Association - 2012 Project | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Aleutian Pribilof Islands Association - 2012 Project Aleutian Pribilof Islands Association - 2012 Project Summary Residents of False Pass have long known the power of the water that rushes daily through Isanotski Pass. A 2009 study funded by the Alaska Energy Authority confirmed the need to study more fully the area's potential for tidal power. To this end, and to address their fossil fuel reduction goal, many Aleut organizations, through the Aleutian Pribilof Island Association Inc. (APIA),

  1. Project Reports for Aleutian Pribilof Islands Association - 2005 Project |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Aleutian Pribilof Islands Association - 2005 Project Project Reports for Aleutian Pribilof Islands Association - 2005 Project The Aleutian Pribilof Islands Association (APIA) will conduct an economic and technical feasibility study for six communities on wind-power/diesel-plant development. Learn more about this project or find details in the below status reports. October 2005 status report (5.68 MB) October 2006 status report (13.8 MB) November 2011 status report (3.16

  2. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  3. East Providence, Rhode Island: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    district.12 Registered Energy Companies in East Providence, Rhode Island Evans Capacitor Company References US Census Bureau Incorporated place and minor civil...

  4. "New Hampshire"," X"," X" "Rhode Island"," X"," X"

    U.S. Energy Information Administration (EIA) Indexed Site

    (PADD 1A)" "Connecticut"," X"," X" "Maine"," X"," X" "Massachusetts"," X"," X" "New Hampshire"," X"," X" "Rhode Island"," X"," X" "Vermont"," X"," X" "Central Atlantic (PADD ...

  5. MHK Projects/Cat Island Project | Open Energy Information

    Open Energy Info (EERE)

    Cat Island Project < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP"...

  6. ,"Rhode Island Natural Gas Consumption by End Use"

    U.S. Energy Information Administration (EIA) Indexed Site

    Consumption by End Use" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Rhode Island ...

  7. Rock Island County, Illinois: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Illinois Hillsdale, Illinois Milan, Illinois Moline, Illinois Oak Grove, Illinois Port Byron, Illinois Rapids City, Illinois Reynolds, Illinois Rock Island Arsenal, Illinois...

  8. MHK Projects/Greenwave Rhode Island Ocean Wave Energy Project...

    Open Energy Info (EERE)

    Greenwave Rhode Island Ocean Wave Energy Project < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":...

  9. Rhode Island Energy Group LLC | Open Energy Information

    Open Energy Info (EERE)

    Group LLC Jump to: navigation, search Name: Rhode Island Energy Group LLC Address: PO Box 340 Place: Portsmouth Zip: 2871 Region: United States Sector: Marine and Hydrokinetic...

  10. Island County, Washington: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Island County, Washington: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 48.19765, -122.579457 Show Map Loading map... "minzoom":false,"mappi...