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Sample records for island ga 2011-2012

  1. Webinar: 2011-2012 Hydrogen Student Design Contest Winners: On...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Webinar: 2011-2012 Hydrogen Student Design Contest Winners: On-Campus Tri-Generation Fuel Cell Systems Above is the video recording for the webinar, "2011-2012 Hydrogen Student ...

  2. Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million...

    U.S. Energy Information Administration (EIA) Indexed Site

    Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep...

  3. Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...

    U.S. Energy Information Administration (EIA) Indexed Site

    Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780 ...

  4. U.S. DOE Webinar Series - 2011-2012 Hydrogen Student Design Contest...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    U.S. DOE Webinar Series - 2011-2012 Hydrogen Student Design Contest Presentation slides from the U.S. Department of Energy Webinar "2011-2012 Hydrogen Student Design Contest ...

  5. Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

    SciTech Connect (OSTI)

    Smalc-Koziorowska, Julita; Sawicka, Marta; Skierbiszewski, Czeslaw; Grzegory, Izabella

    2011-08-08

    We study the mismatch relaxation of 2-5 nm thin elongated AlN islands formed during growth of AlGaN on bulk m-plane GaN by molecular beam epitaxy. The relaxation of these m-plane AlN layers is anisotropic and occurs through the introduction of stacking faults in [0001] planes during island coalescence, while no relaxation is observed along the perpendicular [1120] direction. This anisotropy in the mismatch relaxation and the formation of stacking faults in the AlN islands are explained by the growth mode of the AlN platelets and their coalescence along the [0001] direction.

  6. U.S. DOE Webinar Series - 2011-2012 Hydrogen Student Design Contest |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy DOE Webinar Series - 2011-2012 Hydrogen Student Design Contest U.S. DOE Webinar Series - 2011-2012 Hydrogen Student Design Contest Presentation slides from the U.S. Department of Energy Webinar "2011-2012 Hydrogen Student Design Contest Winners: On-Campus Tri-Generation Fuel Cell Systems," presented on September 4, 2012. 2011-2012 Hydrogen Student Design Contest Winners: On-Campus Tri-Generation Fuel Cell Systems Webinar Slides (5.71 MB) More Documents &

  7. Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 3,066 367 1,939 1,784 2015 2,847 3,010 3,004 2,925 2016 2,877 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Elba Island, GA LNG

  8. Microsoft PowerPoint - uncertainty_hh_2011_2012.ppt [Compatibility Mode]

    U.S. Energy Information Administration (EIA) Indexed Site

    11 - December 2012 Past Henry Hub Price and 95% NYMEX Confidence Interval, January 2011 $10 $12 $8 $10 $4 $6 $2 $4 $0 Jan Jul Jan Jul Jan Jul Jan Jul 1 2010 2010 2011 2011 2012 2012 2013 2013 Past Henry Hub Price and 95% NYMEX Confidence Interval, February 2011 $10 $12 $8 $10 $4 $6 $2 $4 $0 Jan Jul Jan Jul Jan Jul Jan Jul 2 2010 2010 2011 2011 2012 2012 2013 2013 Past Henry Hub Price and 95% NYMEX Confidence Interval, March 2011 $10 $12 $8 $10 $4 $6 $2 $4 $0 Jan Jul Jan Jul Jan Jul Jan Jul 3

  9. Microsoft PowerPoint - uncertainty_wti_2011_2012.ppt [Compatibility Mode]

    U.S. Energy Information Administration (EIA) Indexed Site

    11 - December 2012 January 2011 December 2012 Historical WTI price and 95% NYMEX Confidence Interval, January 2011 $250 $150 $200 $100 $150 $50 $0 Jan Jul Jan Jul Jan Jul Jan Jul 1 2010 2010 2011 2011 2012 2012 2013 2013 Historical WTI price and 95% NYMEX Confidence Interval, February 2011 $250 $150 $200 $100 $150 $50 $0 Jan Jul Jan Jul Jan Jul Jan Jul 2 2010 2010 2011 2011 2012 2012 2013 2013 Historical WTI price and 95% NYMEX Confidence Interval, March 2011 $250 $150 $200 $100 $150 $50 $0 Jan

  10. U.S. DOE Webinar Series - 2011-2012 Hydrogen Student Design Contest

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    5/2012 eere.energy.gov US DOE Webinar Series EERE Fuel Cell Technologies Program 2011-2012 Hydrogen Student Design Contest 4 September 2012 2 2 On-Campus Tri-Generation Fuel Cell Systems Featuring Winners of the 2011-2012 Hydrogen Student Design Contest This Webinar is brought to you by: U.S. Department of Energy Hydrogen Education Foundation 12 PM ET, September 4, 2012 Webinar Overview 1. DOE Introduction - Eric Miller, Greg Kleen, Alli Aman, U.S. Department of Energy 2. Contest Introduction -

  11. Price of Elba Island, GA Natural Gas LNG Imports from Equatorial Guinea

    U.S. Energy Information Administration (EIA) Indexed Site

    (Dollars per Thousand Cubic Feet) Equatorial Guinea (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Natural Gas LNG Imports from Equatorial Guinea (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 6.11 -- -- 2010's -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages:

  12. Price of Elba Island, GA Natural Gas LNG Imports from Nigeria (Nominal

    U.S. Energy Information Administration (EIA) Indexed Site

    Dollars per Thousand Cubic Feet) Nigeria (Nominal Dollars per Thousand Cubic Feet) Price of Elba Island, GA Natural Gas LNG Imports from Nigeria (Nominal Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 11.69 -- -- 9.93 -- 2010's -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016

  13. 2011/2012 Economic Dispatch and Technological Change - Report to Congress

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (September 2012) | Department of Energy 1/2012 Economic Dispatch and Technological Change - Report to Congress (September 2012) 2011/2012 Economic Dispatch and Technological Change - Report to Congress (September 2012) In this report, the Department of Energy is responding to Sections 1234 and 1832 of the Energy Policy Act of 2005, which directed the Secretary of Energy to conduct an annual study of economic dispatch and potential ways to improve such dispatch to the benefit to American

  14. National Bioenergy Center, Biochemical Platform Integration Project: Quarterly Update, Winter 2011-2012 (Newsletter)

    SciTech Connect (OSTI)

    Not Available

    2012-04-01

    Winter 2011-2012 issue of the National Bioenergy Center Biochemical Platform Integration Project quarterly update. Issue topics: 34th Symposium on Biotechnology for Fuels and Chemicals; feasibility of NIR spectroscopy-based rapid feedstock reactive screening; demonstrating integrated pilot-scale biomass conversion. The Biochemical Process Integration Task focuses on integrating the processing steps in enzyme-based lignocellulose conversion technology. This project supports the U.S. Department of Energy's efforts to foster development, demonstration, and deployment of 'biochemical platform' biorefineries that economically produce ethanol or other fuels, as well as commodity sugars and a variety of other chemical products, from renewable lignocellulosic biomass.

  15. Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and

    U.S. Energy Information Administration (EIA) Indexed Site

    Tobago (Million Cubic Feet) Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,460 2,814 5,061 2,907 2,790 2,730 2012 2,854 2,881 2,790 2,862 2,834 2,849 5,562 2013 2,868 2,719 2,669 2014 3,066 367 1,939 1,784 2015 2,847 3,010 3,004 2,925 2016 2,877 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid

  16. Webinar: 2011-2012 Hydrogen Student Design Contest Winners: On-Campus Tri-Generation Fuel Cell Systems

    Broader source: Energy.gov [DOE]

    Video recording of the Fuel Cell Technologies Office webinar, 2011-2012 Hydrogen Student Design Contest Winners: On-Campus Tri-Generation Fuel Cell Systems, originally presented on September 4, 2012.

  17. ISLANDER

    Energy Science and Technology Software Center (OSTI)

    003251WKSTN00 Genomic Island Identification Software v 1.0 http://bioinformatics.sandia.gov/software

  18. GKTC ACTIVITIES TO PROVIDE NUCLEAR MATERIAL PHYSICAL PROTECTION, CONTROL AND ACCOUNTING TRAINING FOR 2011-2012

    SciTech Connect (OSTI)

    Romanova, Olena; Gavrilyuk, Victor I.; Kirischuk, Volodymyr; Gavrilyuk-Burakova, Anna; Diakov, Oleksii; Drapey, Sergiy; Proskurin, Dmitry; Dickman, Deborah A.; Ferguson, Ken

    2011-10-01

    describes the practical efforts applied to the provision of physical protection specialists advanced training in Ukraine and real results on the way to implement such efforts in 2011-2012.

  19. Decommissioning of the remediation systems at Waverly, Nebraska, in 2011-2012.

    SciTech Connect (OSTI)

    LaFreniere, L. M.

    2012-06-29

    the CCC/USDA characterization and remediation efforts, including the quarterly monitoring reports, is on the compact disc inside the back cover of this report. The EPA reported on the progress of the remediation systems in a series of five-year reviews (EPA 1993, 1999, 2004, 2009). These reports and other EPA documentation are also on the compact disc inside the back cover of this report, along with the Woodward-Clyde (1986, 1988a,b) documentation cited. Starting in 2006, the analytical results for groundwater (the only medium still being monitored) showed no carbon tetrachloride concentrations above the maximum contaminant level (MCL) of 5.0 g/L. Because the cleanup goals specified in the ROD (EPA 1990) had been met, the EPA removed the site from the NPL in November 2006 (Appendix A). In 2008 the National Pollutant Discharge Elimination System (NPDES) permit for the remediation system was deactivated, and a year later the EPA released its fourth and final five-year report (EPA 2009), indicating that no further action was required for the site and that the site was ready for unlimited use. In 2011-2012, the CCC/USDA decommissioned the remediation systems at Waverly. This report documents the decommission process and closure of the site.

  20. Annual Report: 2011-2012 Storm Season Sampling, Non-Dry Dock Stormwater Monitoring for Puget Sound Naval Shipyard, Bremerton, WA

    SciTech Connect (OSTI)

    Brandenberger, Jill M.; Metallo, David; Rupert, Brian; Johnston, Robert K.; Gebhart, Christine

    2013-07-03

    Annual PSNS non-dry dock storm water monitoring results for 2011-2012 storm season. Included are a brief description of the sampling procedures, storm event information, laboratory methods and data collection, a results and discussion section, and the conclusions and recommendations.

  1. 2011-2012 Working Groups

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ---2012 C STEC W orking G roup S chedule Inorganic P V June 29 10:30am MSE C onf r oom ( 3062 H H D ow) Sung J oo K im ( Pan) July 13 10:30am MSE C onf r oom ( 3062 H H D ow) Michael K uo ( Ku) July 27 10:30am MSE C onf r oom ( 3062 H H D ow) Simon H uang ( Goldman) August 1 0 10:30am MSE C onf r oom ( 3062 H H D ow) Andy M artin ( Millunchick) October 1 9 1:30pm MSE C onf r oom ( 3062 H H D ow) Emmanouil K iopakis Nov. 9 1:30pm MSE C onf r oom ( 3062 H H D ow) Larry A agesen ( Thornton) Nov. 2

  2. 2011-2012Seminars.pptx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    :00pm* Winter 2012 location - 1504 GG Brown Lab* *Exception April 4 - talk will be in Chrysler Center's Chesebrough Auditorium at 1:30pm August 11 Dr. Antonio Marti - Instituto de Energia Solar, Universidad Politécnica de Madrid, Madrid, Spain (Tuesday) Progress on Intermediate Band Solar Cell Research September 7 Dr. Luping Yu - Department of Chemistry, University of Chicago (Wednesday) Organic Single Molecular Junction and Bulk Heterojunction - From Molecular Rectification to Organic

  3. 2011-2012 SECTION IV: Miscellaneous

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Miscellaneous Ernest Rutherford and the origins of nuclear physics J.C. Hardy

  4. US Virgin Islands-Energy Development in Island Nations (EDIN...

    Open Energy Info (EERE)

    US Virgin Islands-Energy Development in Island Nations (EDIN) Pilot Project Jump to: navigation, search Logo: US Virgin Islands-Energy Development in Island Nations (EDIN) Pilot...

  5. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  6. San Miguel Island, Channel Islands National Park, California | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Miguel Island, Channel Islands National Park, California San Miguel Island, Channel Islands National Park, California Photo of Wind/Photovoltaic Power System at San Miguel Island San Miguel Island is one of five islands that make up Channel Islands National Park on the coast of southern California. The islands comprise 249,353 acres (100,910 hectares) of land and ocean that teems with terrestrial and marine life. The National Park Service (NPS) protects the pristine resources at

  7. Monhegan Island | Open Energy Information

    Open Energy Info (EERE)

    Island Jump to: navigation, search Name Monhegan Island Facility Monhegan Island Sector Wind energy Facility Type Offshore Wind Facility Status Proposed Owner Maine State Dept of...

  8. Washington County, Rhode Island: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Rhode Island Bradford, Rhode Island Charlestown, Rhode Island Exeter, Rhode Island Hope Valley, Rhode Island Hopkinton, Rhode Island Kingston, Rhode Island Narragansett Pier,...

  9. Island Energy Conference

    Broader source: Energy.gov [DOE]

    The sixth annual Island Energy Conference will include speakers and panels on Friday, November 6, and a site visit to Star Island, New Hampshire, that hosts Northern New England’s largest offshore...

  10. 2011/2012 Economic Dispatch and Technological Change - Report...

    Energy Savers [EERE]

    They are: 1) variable generation resources, 2) energy storage, 3) the production tax credit, 4) market structure, 5) environmental regulations, 6) demand response, and 7) market ...

  11. Research Highlights 2011-2012 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Image of KLA-Tencor's Candela 8620 inspection tool KLA-Tencor's Inspection Tool Reduces LED Manufacturing Costs With the help of DOE funding, KLA-Tencor is developing an improved inspection tool for LED manufacturing that promises to significantly increase overall process yields and minimize expensive waste. The project is based around KLA-Tencor's Candela inspection technology and includes the successful realization of several significant technical enhancements that have improved defect

  12. Advancing Innovation Through Partnerships 2011-2012 Technology...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Gas Separation Using Ultrasound and Light Absorption U.S. Patent 8,231,707 ... Detection and Analysis of Corrosion Under Insulation Development of Superluminal Radio Frequency (RF) ...

  13. FTCP Biennial Report - Calendar Years 2011-2012 | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Deputy Secretary of Energy issued DOE Order 426. l, Federal Technical Capability, to institutionalize the Federal Technical Capability Program (FTCP). This Biennial Report ...

  14. Microsoft Word - EJ 2011-2012 Report.docx

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Message from Dave Geiser Environmental justice (EJ) is the fair treatment and meaningful involvement of all people regardless of race, color, national origin, or income with respect to the development, implementation, and enforcement of environmental laws, regulations, and policies. On February 11, 1994, President Clinton issued Executive Order (EO) 12898, Federal Actions to Address Environmental Justice in Minority Populations and Low-Income Populations, and he tasked each federal agency to

  15. 2011-2012 SECTION I: NUCLEAR STRUCTURE, FUNDAMENTAL INTERACTIONS AND

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ASTROPHYSICS The isoscalar monopole resonance in the A~90 region D.H. Youngblood, Y.-W. Lui, Krishichayan, J. Button, M.R. Anders, M.L. Gorelik, M.H. Urin, and S. Shlomo Superallowed beta decay J.C. Hardy, I.S. Towner, V.E. Iacob, H.I. Park, L. Chen, V. Horvat, N. Nica, J Goodwin, M. Bencomo, L. Trache and R.E. Tribble Measurement of branching-ratios in the beta decay of 38Ca H.I. Park, J.C. Hardy, V.E. Iacob, M. Bencomo, L. Chen, J.R. Goodwin, V. Horvat, N. Nica, B.T. Roeder, L. Trache and

  16. 2011-2012 SECTION I: NUCLEAR STRUCTURE, FUNDAMENTAL INTERACTIONS AND

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ASTROPHYSICS H. I. Park, L. Chen, V. Horvat, N. Nica, M. Bencomo and R. E. Tribble Tests of internal-conversion theory with precise γ- and x-ray spectroscopy: the case of 119Snm N. Nica, J. C. Hardy, V. E. Iacob, M. Maguire, and M. B. Trzhaskovskaya United States nuclear structure data program (USNDP) and evaluated nuclear structure data file (ENSDF) at Texas A&M University N. Nica and J. C. Hardy Measurement of branching-ratios in the β decay of 38Ca H.I. Park, J.C. Hardy, V.E. Iacob,

  17. 2011-2012 SECTION II: HEAVY ION REACTIONS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A search for super heavy elements using a catcher foil M. Barbui, K. Schmidt, J.B. Natowitz, H. Zheng, K. Hagel, A. Bonasera and M. Barbino Probing clusterization in 40Ca + 40Ca reactions K. Schmidt, M. Barbui, J. B. Natowitz, K. Hagel, A. Bonasera, G. Giuliani, M. Rodrigues, R. Wada, M. Huang, C. Botosso, G. Liu, G. Viesti, S. Moretto, G. Prete, S. Pesente, D. Fabris, Y. El Masri, T. Keutgen, S. Kowalski, and A. Kumar Yield of D-D and D-3He fusion reactions produced by the interaction of

  18. 2011-2012 SECTION II: HEAVY ION REACTIONS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Factors influencing residue cross section in 48Ca-induced reactions D. A. Mayorov, T. A. Werke, M. C. Alfonso, M. E. Bennett, and C. M. Folden III Characterization of a gas stopper for heavy element chemistry studies M. C. Alfonso, D. A. Mayorov, T. A. Werke, and C. M. Folden III Fabrication of lanthanide targets for nuclear reaction studies D. A. Mayorov, T. A. Werke, M. E. Bennett, and C. M. Folden III Excitation functions of 45Sc-induced reactions: towards future superheavy element synthesis

  19. Arctic ice islands

    SciTech Connect (OSTI)

    Sackinger, W.M.; Jeffries, M.O.; Lu, M.C.; Li, F.C.

    1988-01-01

    The development of offshore oil and gas resources in the Arctic waters of Alaska requires offshore structures which successfully resist the lateral forces due to moving, drifting ice. Ice islands are floating, a tabular icebergs, up to 60 meters thick, of solid ice throughout their thickness. The ice islands are thus regarded as the strongest ice features in the Arctic; fixed offshore structures which can directly withstand the impact of ice islands are possible but in some locations may be so expensive as to make oilfield development uneconomic. The resolution of the ice island problem requires two research steps: (1) calculation of the probability of interaction between an ice island and an offshore structure in a given region; and (2) if the probability if sufficiently large, then the study of possible interactions between ice island and structure, to discover mitigative measures to deal with the moving ice island. The ice island research conducted during the 1983-1988 interval, which is summarized in this report, was concerned with the first step. Monte Carlo simulations of ice island generation and movement suggest that ice island lifetimes range from 0 to 70 years, and that 85% of the lifetimes are less then 35 years. The simulation shows a mean value of 18 ice islands present at any time in the Arctic Ocean, with a 90% probability of less than 30 ice islands. At this time, approximately 34 ice islands are known, from observations, to exist in the Arctic Ocean, not including the 10-meter thick class of ice islands. Return interval plots from the simulation show that coastal zones of the Beaufort and Chukchi Seas, already leased for oil development, have ice island recurrences of 10 to 100 years. This implies that the ice island hazard must be considered thoroughly, and appropriate safety measures adopted, when offshore oil production plans are formulated for the Alaskan Arctic offshore. 132 refs., 161 figs., 17 tabs.

  20. Bainbridge Island Data Dashboard

    Broader source: Energy.gov [DOE]

    The data dashboard for Bainbridge Island, a partner in the U.S. Department of Energy's Better Buildings Neighborhood Program.

  1. Island Energy Snapshots

    Broader source: Energy.gov [DOE]

    These energy snapshots highlight the energy landscape of islands in the Caribbean, the Pacific, and the surrounding area.

  2. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

    SciTech Connect (OSTI)

    Jha, Smita; Liu, C.-C.; Nealey, P. F.; Kuech, T. F.; Kuan, T. S.; Babcock, S. E.; Park, J. H.; Mawst, L. J.

    2009-08-10

    Defect reduction in the large lattice mismatched system of GaSb on GaAs, {approx}7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of {approx}20 nm holes on {approx}40 nm centers in a 20 nm SiO{sub 2} layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO{sub 2} layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.

  3. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  4. Island Boundaries, Hawaii

    SciTech Connect (OSTI)

    Nicole Lautze

    2015-01-01

    Outline of Hawaiian islands (Kauai, Oahu, Molokai, Kahoolawe, Lanai, Maui, Hawaii) generated from the Geologic Map of the State of Hawaii published by the USGS in 2007.

  5. San Clemente Island, Channel Islands National Park, California...

    Energy Savers [EERE]

    San Clemente Island, Channel Islands National Park, California Photo of Wind Turbine on ... Management Program (FEMP). A third turbine was installed in 1999, allowing the wind ...

  6. TWP Island Cloud Trail Studies

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    These island cloud trails have been observed from both the islands of Nauru and Manus, Papua New Guinea. Figure 2 shows an island cloud at Manus observed from MTI and from the ...

  7. Basaltic island sand provenance

    SciTech Connect (OSTI)

    Marsaglia, K.M. . Dept. of Geological Sciences)

    1992-01-01

    The Hawaiian Islands are an ideal location to study basaltic sand provenance in that they are a series of progressively older basaltic shield volcanoes with arid to humid microclimates. Sixty-two sand samples were collected from beaches on the islands of Hawaii, Maui, Oahu and Kauai and petrographically analyzed. The major sand components are calcareous bioclasts, volcanic lithic fragments, and monomineralic grains of dense minerals and plagioclase. Proportions of these components vary from island to island, with bioclastic end members being more prevalent on older islands exhibiting well-developed fringing reef systems and volcanic end members more prevalent on younger, volcanically active islands. Climatic variations across the island of Hawaii are reflected in the percentage of weathered detritus, which is greater on the wetter, northern side of the island. The groundmass of glassy, basaltic lithics is predominantly black tachylite, with lesser brown sideromelane; microlitic and lathwork textures are more common than holohyaline vitric textures. Other common basaltic volcanic lithic fragments are holocrystalline aggregates of silt-sized pyroxene or olivine, opaque minerals and plagioclase. Sands derived from alkalic lavas are texturally and compositionally indistinguishable from sands derived from tholeiitic lavas. Although Hawaiian basaltic sands overlap in composition with magmatic arc-derived sands in terms of their relative QFL, QmPK and LmLvLs percentages, they are dissimilar in that they lack felsic components and are more enriched in lathwork volcanic lithic fragments, holocrystalline volcanic lithic fragments, and dense minerals.

  8. Rhode Island Heat Content of Natural Gas Consumed

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    2009 2010 2011 2012 2013 2014 View History Delivered to Consumers 1,023 1,017 1,020 1,031 1,032 1,028 2007-2014...

  9. Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hwang, Ya-Hsi; Ahn, Shihyun; Dong, Chen; Zhu, Weidi; Kim, Byung-Jae; Le, Lingcong; Ren, Fan; Lind, Aaron G.; Dahl, James; Jones, Kevin S.; et al

    2015-04-27

    We investigated the degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE). The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/ₜafter 3 min BOE treatment. The alloyed Ohmic metallization consisted 3–5 μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Lastly, we used energy dispersive x-ray analysis and Auger electron microscopy to analyze the compositions and metal distributions in the metal alloys prior to and aftermore » BOE exposure.« less

  10. United States Virgin Islands: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Rebate Program (Virgin Islands) U.S. Virgin Islands - Energy Efficiency Residential Rebates (Virgin Islands) U.S. Virgin Islands - Net Metering (Virgin Islands) U.S. Virgin...

  11. PSEG Long Island- Renewable Electricity Goal

    Broader source: Energy.gov [DOE]

    NOTE: As of January 1, 2014, Long Island is served by PSEG Long Island, replacing Long Island Power Authority (LIPA). Long Island Renewable Energy goal ended in 2013, and currently does not have...

  12. Long Island Solar Farm

    SciTech Connect (OSTI)

    Anders, R.

    2013-05-01

    The Long Island Solar Farm (LISF) is a remarkable success story, whereby very different interest groups found a way to capitalize on unusual circumstances to develop a mutually beneficial source of renewable energy. The uniqueness of the circumstances that were necessary to develop the Long Island Solar Farm make it very difficult to replicate. The project is, however, an unparalleled resource for solar energy research, which will greatly inform large-scale PV solar development in the East. Lastly, the LISF is a superb model for the process by which the project developed and the innovation and leadership shown by the different players.

  13. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  14. Island Wide Management Corporation

    Office of Legacy Management (LM)

    9 1986 Island Wide Management Corporation 3000 Marcus Avenue Lake Success, New York 11042 Dear Sir or Madam: I am sending you this letter and the enclosed information as you have been identified by L. I. Trinin of Glick Construction Company as the representatives of the owners of the property that was formerly the site of the Sylvania-Corning Nuclear Corporation in Bayside, New York. The Department of Energy is evaluating the radiological condition of sites that were utilized under the Manhattan

  15. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Huang, S.; Kim, S. J.; Pan, X. Q.; Goldman, R. S.

    2014-07-21

    We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

  16. AMF Deployment, Graciosa Island, Azores

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Graciosa Island Home Data Plots and Baseline Instruments Satellite Retrievals Experiment Planning CAP-MBL Proposal Abstract and Related Campaigns Science Questions Science Plan...

  17. Enjebi Island dose assessment

    SciTech Connect (OSTI)

    Robison, W.L.; Conrado, C.L.; Phillips, W.A.

    1987-07-01

    We have updeated the radiological dose assessment for Enjebi Island at Enewetak Atoll using data derived from analysis of food crops grown on Enjebi. This is a much more precise assessment of potential doses to people resettling Enjebi Island than the 1980 assessment in which there were no data available from food crops on Enjebi. Details of the methods and data used to evaluate each exposure pathway are presented. The terrestrial food chain is the most significant potential exposure pathway and /sup 137/Cs is the radionuclide responsible for most of the estimated dose over the next 50 y. The doses are calculated assuming a resettlement date of 1990. The average wholebody maximum annual estimated dose equivalent derived using our diet model is 166 mremy;the effective dose equivalent is 169 mremy. The estimated 30-, 50-, and 70-y integral whole-body dose equivalents are 3.5 rem, 5.1 rem, and 6.2 rem, respectively. Bone-marrow dose equivalents are only slightly higher than the whole-body estimates in each case. The bone-surface cells (endosteal cells) receive the highest dose, but they are a less sensitive cell population and are less sensitive to fatal cancer induction than whole body and bone marrow. The effective dose equivalents for 30, 50, and 70 y are 3.6 rem, 5.3 rem, and 6.6 rem, respectively. 79 refs., 17 figs., 24 tabs

  18. Island Energy Solutions | Open Energy Information

    Open Energy Info (EERE)

    search Name: Island Energy Solutions Place: Kailua, Hawaii Zip: 96734 Product: Island Energy Solutions, Inc. is an electrical contracting company, based out of Kailua, Oahu,...

  19. Island Energy Snapshots | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    islands around the globe, the featured islands are heavily reliant on fossil fuels for electricity generation, leaving them vulnerable to global oil price fluctuations that...

  20. Fox Islands Wind Project | Open Energy Information

    Open Energy Info (EERE)

    Fox Islands Electric Cooperative Location Vinalhaven Island ME Coordinates 44.088391, -68.857802 Show Map Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":...

  1. University of Rhode Island | Open Energy Information

    Open Energy Info (EERE)

    Testing Facilities Name University of Rhode Island Address Department of Ocean Engineering, Sheets Building, Bay Campus Place Narragansett, Rhode Island Zip 02882 Sector...

  2. Hainan Green Islands Power | Open Energy Information

    Open Energy Info (EERE)

    Green Islands Power Jump to: navigation, search Name: Hainan Green Islands Power Place: Hainan Province, China Sector: Solar Product: China-based JV developing on-grid solar...

  3. Grey Island Energy Inc | Open Energy Information

    Open Energy Info (EERE)

    Grey Island Energy Inc Jump to: navigation, search Name: Grey Island Energy Inc Address: Suite 3003 Inco Innovation Centre Memorial University of Newfoundland PO Box 4200 Place: St...

  4. MWRA Deer Island Wind | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name MWRA Deer Island Wind Facility MWRA Deer Island Wind Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner MWRA Deer...

  5. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  6. Growth modes of InN(000-1) on GaN buffer layers on sapphire

    SciTech Connect (OSTI)

    Liu, Bing; Kitajima, Takeshi; Chen, Dongxue; Leone, Stephen R.

    2005-01-24

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  7. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  8. EIS-0006: Wind Turbine Generator System, Block Island, Rhode Island

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy prepared this EIS to evaluate the environmental impacts of installing and operating a large experimental wind turbine, designated the MOD-OA, which is proposed to be installed on a knoll in Rhode Island's New Meadow Hill Swamp, integrated with the adjacent Block Island Power Company power plant and operated to supply electricity to the existing utility network.

  9. Island Gas | Open Energy Information

    Open Energy Info (EERE)

    United Kingdom Zip: W1J 7BU Sector: Renewable Energy Product: UK-based coal bed methane company, Island Gas was the subject of a reverse takeover by KP Renewables in...

  10. Lessons Learned in Islands | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Transition Initiative » Lessons Learned in Islands Lessons Learned in Islands Hawai'i, the U.S. Virgin Islands, and other island communities have successfully implemented renewable energy and energy efficiency technologies to decrease their reliance on fossil fuels and achieve sustainability, economic development, and other goals. Read how in these lessons learned, which are also featured in the Islands Energy Playbook. Assessing Pathways in Aruba Learn how Aruba developed an actionable

  11. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  12. Rhode Island Offshore Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    Rhode Island Offshore Wind Farm Jump to: navigation, search Name Rhode Island Offshore Wind Farm Facility Rhode Island Offshore Wind Farm Sector Wind energy Facility Type Offshore...

  13. Newby Island I Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    Newby Island I Biomass Facility Jump to: navigation, search Name Newby Island I Biomass Facility Facility Newby Island I Sector Biomass Facility Type Landfill Gas Location Santa...

  14. Long Island Power Authority Solar Project | Open Energy Information

    Open Energy Info (EERE)

    Long Island Power Authority Solar Project Jump to: navigation, search Name Long Island Power Authority Solar Project Facility Long Island Power Authority Solar Project Sector Solar...

  15. Mustang Island Offshore Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    Island Offshore Wind Farm Jump to: navigation, search Name Mustang Island Offshore Wind Farm Facility Mustang Island Offshore Wind Farm Sector Wind energy Facility Type Offshore...

  16. Newport County, Rhode Island: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    5 Climate Zone Subtype A. Registered Energy Companies in Newport County, Rhode Island Forbes Energy LLC Places in Newport County, Rhode Island Jamestown, Rhode Island Little...

  17. Energy Department Helps Advance Island Clean Energy Goals | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department Helps Advance Island Clean Energy Goals Energy Department Helps Advance Island Clean Energy Goals Highlights a solar power purchase agreement between the Virgin Islands ...

  18. Saint Paul Island Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    Paul Island Wind Farm Jump to: navigation, search Name Saint Paul Island Wind Farm Facility Saint Paul Island Sector Wind energy Facility Type Community Wind Facility Status In...

  19. Seeding of InP islands on InAs quantum dot templates

    SciTech Connect (OSTI)

    Medeiros-Ribeiro, G.; Maltez, R. L.; Bernussi, A. A.; Ugarte, D.; de Carvalho, W.

    2001-06-01

    The ability of stacking layers of islands and their corresponding alignment have prompted a number of studies. The main focus so far has been on stacking self-assembled quantum dot (QD) layers of the same material and composition. Our goal is to create systems of coupled QDs of different electronic properties, aiming at hybridization of their different electronic levels. In this work, we investigate the early stages of the coupling of alternate InAs{endash}InP QD layers through a GaAs spacer layer. We have found that by using an InAs layer containing QDs as seeds, we can control the size, shape and density of InP islands by varying the spacer thickness. We have observed a significant improvement of the InP island size uniformity, as well as an induced size reduction, thus providing an extra degree of tunability previously available only through growth kinetics. {copyright} 2001 American Institute of Physics.

  20. One million served: Rhode Island`s recycling facility

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-11-01

    Rhode Island`s landfill and adjacent materials recovery facility (MRF) in Johnston, both owned by the quasi-public Rhode Island Resource Recovery Corp. (RIRRC, Johnston), serve the entire state. The $12-million recycling facility was built in 1989 next to the state`s sole landfill, the Central Landfill, which accepts only in-state trash. The MRF is operated for RIRRC by New England CRInc. (Hampton, N.H.), a unit of Waste Management, Inc. (WMI, Oak Brook, Ill.). It handles a wide variety of materials, from the usual newspaper, cardboard, and mixed containers to new streams such as wood waste, scrap metal, aseptic packaging (milk and juice boxes), and even textiles. State municipalities are in the process of adding many of these new recyclable streams into their curbside collection programs, all of which feed the facility.

  1. Suppression of metastable-phase inclusion in N-polar (0001{sup }) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Shojiki, Kanako Iwabuchi, Takuya; Kuboya, Shigeyuki; Choi, Jung-Hun; Tanikawa, Tomoyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi; Usami, Noritaka

    2015-06-01

    The metastable zincblende (ZB) phase in N-polar (0001{sup }) (?c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the ?c-plane and Ga-polar (0001) (+c-plane), the ?c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the ?c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated.

  2. Thermal island destabilization and the Greenwald limit

    SciTech Connect (OSTI)

    White, R. B.; Gates, D. A.; Brennan, D. P.

    2015-02-15

    Magnetic reconnection is ubiquitous in the magnetosphere, the solar corona, and in toroidal fusion research discharges. In a fusion device, a magnetic island saturates at a width which produces a minimum in the magnetic energy of the configuration. At saturation, the modified current density profile, a function of the flux in the island, is essentially flat, the growth rate proportional to the difference in the current at the O-point and the X-point. Further modification of the current density profile in the island interior causes a change in the island stability and additional growth or contraction of the saturated island. Because field lines in an island are isolated from the outside plasma, an island can heat or cool preferentially depending on the balance of Ohmic heating and radiation loss in the interior, changing the resistivity and hence the current in the island. A simple model of island destabilization due to radiation cooling of the island is constructed, and the effect of modification of the current within an island is calculated. An additional destabilization effect is described, and it is shown that a small imbalance of heating can lead to exponential growth of the island. A destabilized magnetic island near the plasma edge can lead to plasma loss, and because the radiation is proportional to plasma density and charge, this effect can cause an impurity dependent density limit.

  3. Thermal island destabilization and the Greenwald limit

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    White, R. B.; Gates, D. A.; Brennan, D. P.

    2015-02-24

    Magnetic reconnection is ubiquitous in the magnetosphere, the solar corona, and in toroidal fusion research discharges. A magnetic island saturates at a width which produces a minimum in the magnetic energy of the configuration is evident in a fusion device. At saturation, the modified current density profile, a function of the flux in the island, is essentially flat, the growth rate proportional to the difference in the current at the O-point and the X-point. Furthermore, modification of the current density profile in the island interior causes a change in the island stability and additional growth or contraction of the saturatedmore » island. Because field lines in an island are isolated from the outside plasma, an island can heat or cool preferentially depending on the balance of Ohmic heating and radiation loss in the interior, changing the resistivity and hence the current in the island. A simple model of island destabilization due to radiation cooling of the island is constructed, and the effect of modification of the current within an island is calculated. In addition destabilization effect is described, and it is shown that a small imbalance of heating can lead to exponential growth of the island. A destabilized magnetic island near the plasma edge can lead to plasma loss, and because the radiation is proportional to plasma density and charge, this effect can cause an impurity dependent density limit.« less

  4. Recharge Data for Hawaii Island

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Nicole Lautze

    2015-01-01

    Recharge data for Hawaii Island in shapefile format. The data are from the following sources: Whittier, R.B and A.I. El-Kadi. 2014. Human Health and Environmental Risk Ranking of On-Site Sewage Disposal systems for the Hawaiian Islands of Kauai, Molokai, Maui, and Hawaii – Final, Prepared for Hawaii Dept. of Health, Safe Drinking Water Branch by the University of Hawaii, Dept. of Geology and Geophysics. Oki, D. S. 1999. Geohydrology and Numerical Simulation of the Ground-Water Flow System of Kona, Island of Hawaii. U.S. Water-Resources Investigation Report: 99-4073. Oki, D. S. 2002. Reassessment of Ground-water Recharge and Simulated Ground-Water Availability for the Hawi Area of North Kohala, Hawaii. U.S. Geological Survey Water-Resources Investigation report 02-4006.

  5. Hawaii Island Groundwater Flow Model

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Nicole Lautze

    2015-01-01

    Groundwater flow model for Hawaii Island. Data is from the following sources: Whittier, R.B., K. Rotzoll, S. Dhal, A.I. El-Kadi, C. Ray, G. Chen, and D. Chang. 2004. Hawaii Source Water Assessment Program Report – Volume II – Island of Hawaii Source Water Assessment Program Report. Prepared for the Hawaii Department of Health, Safe Drinking Water Branch. University of Hawaii, Water Resources Research Center. Updated 2008; and Whittier, R. and A.I. El-Kadi. 2014. Human and Environmental Risk Ranking of Onsite Sewage Disposal Systems For the Hawaiian Islands of Kauai, Molokai, Maui, and Hawaii – Final. Prepared by the University of Hawaii, Dept. of Geology and Geophysics for the State of Hawaii Dept. of Health, Safe Drinking Water Branch. September 2014.

  6. ARM - News from the Ascension Island deployment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govNews from the Ascension Island deployment News from the Ascension Island deployment Media Coverage Features ClimateWire "Do clouds + smoke = climate change? Africa may have answers" *Subscription required. June 16, 2016

  7. Market Update: New England Islanded Grids

    Broader source: Energy.gov [DOE]

    Join the Islanded Grid Resource Center (IGRC) for our upcoming webinar highlighting the islanded grid communities along the New England coast that are exploring their options for reducing high...

  8. REAP Islanded Grid Wind Power Conference

    Broader source: Energy.gov [DOE]

    Hosted by Renewable Energy Alaska Project, this three-day conference will show attendees how to learn, network, and share information on wind systems in island and islanded grid environments through expert panel discussions, stakeholder dialogue, and training.

  9. REAP Islanded Grid Wind Power Conference

    Office of Energy Efficiency and Renewable Energy (EERE)

    Hosted by Renewable Energy Alaska Project, this three-day conference will show attendees how to learn, network, and share information on wind systems in island and islanded grid environments...

  10. Bainbridge Island Data Dashboard | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    The data dashboard for Bainbridge Island, a partner in the U.S. Department of Energy's Better Buildings Neighborhood Program. Bainbridge Island Data Dashboard (301.2 KB) More ...

  11. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  12. Energy Transition Initiative: Island Energy Snapshot - U.S. Virgin Islands (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2015-03-01

    This profile provides a snapshot of the energy landscape of the U.S. Virgin Islands (USVI) - St. Thomas, St. John, and St. Croix. The Virgin Islands archipelago makes up the northern portion of the Lesser Antilles and the western island group of the Leeward Islands, forming the border between the Atlantic Ocean and the Caribbean Sea.

  13. Aleutian Pribilof Islands Association - Wind Energy Development

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    In the Aleutian Pribilof Islands Tribal Energy Program Review November 18, 2008 By Bruce Wright Connie Fredenberg Aleutian Pribilof Islands Association "The Birthplace of the Wind" Aleutian Pribilof Islands Association, Inc. * 150 mph gusts * Extreme Turbulence Potential * Corrosive Salt Spray World Class Wind: A Mixed Blessing Aleutian Pribilof Islands Association, Inc. LOGISTICS * Anchorage to Nikolski is 916 air miles for $1,316 rt. * During the fishing season a refundable ticket

  14. Islands and Our Renewable Energy Future (Presentation)

    SciTech Connect (OSTI)

    Baring-Gould, I.; Gevorgian, V.; Kelley, K.; Conrad, M.

    2012-05-01

    Only US Laboratory Dedicated Solely to Energy Efficiency and Renewable Energy. High Contribution Renewables in Islanded Power Systems.

  15. Past, Present, Future Erosion at Locke Island

    SciTech Connect (OSTI)

    Bjornstad, Bruce N.

    2006-08-08

    This report describes and documents the erosion that has occurred along the northeast side of Locke Island over the last 10 to 20 years. The principal cause of this erosion is the massive Locke Island landslide complex opposite the Columbia River along the White Bluffs, which constricts the flow of the river and deflects the river's thalweg southward against the island.

  16. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  17. Energy Transition Initiative: Islands Playbook

    Broader source: Energy.gov [DOE]

    The Island Energy Playbook provides an action-oriented guide to successfully initiating, planning, and completing a transition to an energy system that primarily relies on local resources to eliminate a dependence on one or two imported fuels. It is intended to serve as a readily available framework that any community can adapt to organize its own energy transition effort.

  18. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  19. Progress in Research 2011 - 2012 / Cyclotron Institute / Texas A&M

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    University 1 - March 31, 2012 INTRODUCTION R.E. Tribble, Director SECTION I: NUCLEAR STRUCTURE, FUNDAMENTAL INTERACTIONS AND ASTROPHYSICS SECTION II: HEAVY ION REACTIONS SECTION III: NUCLEAR THEORY SECTION IV: Miscellaneous SECTION V: SUPERCONDUCTING CYCLOTRON, INSTRUMENTATION, AND RIB UPGRADE

  20. U.S. DOE Webinar Series - 2011-2012 Hydrogen Student Design Contest

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... in winter - Approximately 13 MW of building cooling in summer provided by steam-turbine-driven chillers UMD combined cycle power plant Steam-driven chiller for heat-driven ...

  1. Advanced Simulation and Computing Fiscal Year 2011-2012 Implementation Plan, Revision 0

    SciTech Connect (OSTI)

    McCoy, M; Phillips, J; Hpson, J; Meisner, R

    2010-04-22

    The Stockpile Stewardship Program (SSP) is a single, highly integrated technical program for maintaining the surety and reliability of the U.S. nuclear stockpile. The SSP uses past nuclear test data along with current and future non-nuclear test data, computational modeling and simulation, and experimental facilities to advance understanding of nuclear weapons. It includes stockpile surveillance, experimental research, development and engineering (D&E) programs, and an appropriately scaled production capability to support stockpile requirements. This integrated national program requires the continued use of current facilities and programs along with new experimental facilities and computational enhancements to support these programs. The Advanced Simulation and Computing Program (ASC) is a cornerstone of the SSP, providing simulation capabilities and computational resources to support the annual stockpile assessment and certification, to study advanced nuclear weapons design and manufacturing processes, to analyze accident scenarios and weapons aging, and to provide the tools to enable stockpile Life Extension Programs (LEPs) and the resolution of Significant Finding Investigations (SFIs). This requires a balanced resource, including technical staff, hardware, simulation software, and computer science solutions. In its first decade, the ASC strategy focused on demonstrating simulation capabilities of unprecedented scale in three spatial dimensions. In its second decade, ASC is focused on increasing its predictive capabilities in a three-dimensional (3D) simulation environment while maintaining support to the SSP. The program continues to improve its unique tools for solving progressively more difficult stockpile problems (focused on sufficient resolution, dimensionality and scientific details); to quantify critical margins and uncertainties (QMU); and to resolve increasingly difficult analyses needed for the SSP. Moreover, ASC has restructured its business model from one that was very successful in delivering an initial capability to one that is integrated and focused on requirements-driven products that address long-standing technical questions related to enhanced predictive capability in the simulation tools. ASC must continue to meet three objectives: Objective 1 - Robust Tools. Develop robust models, codes, and computational techniques to support stockpile needs such as refurbishments, SFIs, LEPs, annual assessments, and evolving future requirements. Objective 2 - Prediction through Simulation. Deliver validated physics and engineering tools to enable simulations of nuclear weapons performance in a variety of operational environments and physical regimes and to enable risk-informed decisions about the performance, safety, and reliability of the stockpile. Objective 3 - Balanced Operational Infrastructure. Implement a balanced computing platform acquisition strategy and operational infrastructure to meet Directed Stockpile Work (DSW) and SSP needs for capacity and high-end simulation capabilities.

  2. Annual Review of Low-Carbon Development in China (2011-2012)...

    Open Energy Info (EERE)

    URI: cleanenergysolutions.orgcontentannual-review-low-carbon-development- Language: English Policies: "Deployment Programs,Regulations" is not in the list of possible values...

  3. Magnetic island evolution in hot ion plasmas

    SciTech Connect (OSTI)

    Ishizawa, A.; Nakajima, N.; Waelbroeck, F. L.; Fitzpatrick, R.; Horton, W.

    2012-07-15

    Effects of finite ion temperature on magnetic island evolution are studied by means of numerical simulations of a reduced set of two-fluid equations which include ion as well as electron diamagnetism in slab geometry. The polarization current is found to be almost an order of magnitude larger in hot than in cold ion plasmas, due to the strong shear of ion velocity around the separatrix of the magnetic islands. As a function of the island width, the propagation speed decreases from the electron drift velocity (for islands thinner than the Larmor radius) to values close to the guiding-center velocity (for islands of order 10 times the Larmor radius). In the latter regime, the polarization current is destabilizing (i.e., it drives magnetic island growth). This is in contrast to cold ion plasmas, where the polarization current is generally found to have a healing effect on freely propagating magnetic island.

  4. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  5. Electrolysis on an Island Grid

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electrolysis on an Island Grid Mitch Ewan Hydrogen Systems Program Manager Hawaii Natural Energy Institute School of Ocean Earth Science and Technology University of Hawaii at Manoa 28 February 2014 High Percentages of As-Available Renewable Resources Creates Problems for Grid Systems 1300MW 75MW 5MW 200MW  Good renewable resource mix;  High electricity costs; and  Grid issues.  Provide unique opportunity for validation and deployment of new renewable and enabling technologies. 200MW

  6. The Three Mile Island crisis

    SciTech Connect (OSTI)

    Houts, P.S.; Cleary, P.D.; Hu, T.W.

    1988-01-01

    Since the March 1979 accident at the Three Mile Island (TMI) nuclear power plant, many studies have assessed its impacts. Compiled and summarized in this book are the results of five related surveys, all aimed at the scientific assessment of the psycho-socio-economic behavior of the residents around the TMI facility. These studies are based on a randomly selected, large sample of the population (with telephones) around TMI.

  7. Pathogenicity island mobility and gene content.

    SciTech Connect (OSTI)

    Williams, Kelly Porter

    2013-10-01

    Key goals towards national biosecurity include methods for analyzing pathogens, predicting their emergence, and developing countermeasures. These goals are served by studying bacterial genes that promote pathogenicity and the pathogenicity islands that mobilize them. Cyberinfrastructure promoting an island database advances this field and enables deeper bioinformatic analysis that may identify novel pathogenicity genes. New automated methods and rich visualizations were developed for identifying pathogenicity islands, based on the principle that islands occur sporadically among closely related strains. The chromosomally-ordered pan-genome organizes all genes from a clade of strains; gaps in this visualization indicate islands, and decorations of the gene matrix facilitate exploration of island gene functions. A %E2%80%9Clearned phyloblocks%E2%80%9D method was developed for automated island identification, that trains on the phylogenetic patterns of islands identified by other methods. Learned phyloblocks better defined termini of previously identified islands in multidrug-resistant Klebsiella pneumoniae ATCC BAA-2146, and found its only antibiotic resistance island.

  8. A signature for turbulence driven magnetic islands

    SciTech Connect (OSTI)

    Agullo, O.; Muraglia, M.; Benkadda, S.; Poyé, A.; Yagi, M.; Garbet, X.; Sen, A.

    2014-09-15

    We investigate the properties of magnetic islands arising from tearing instabilities that are driven by an interchange turbulence. We find that such islands possess a specific signature that permits an identification of their origin. We demonstrate that the persistence of a small scale turbulence maintains a mean pressure profile, whose characteristics makes it possible to discriminate between turbulence driven islands from those arising due to an unfavourable plasma current density gradient. We also find that the island poloidal turnover time, in the steady state, is independent of the levels of the interchange and tearing energy sources. Finally, we show that a mixing length approach is adequate to make theoretical predictions concerning island flattening in the island rotation frame.

  9. Energy Transition Initiative, Island Energy Snapshot - British Virgin Islands (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2015-03-01

    This profile provides a snapshot of the energy landscape of the British Virgin Islands (BVI), one of three sets of the Virgin Island territories in an archipelago making up the northern portion of the Lesser Antilles.

  10. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  11. NREL: Technology Deployment - Technical Assistance for Islands

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Islands NREL provides technical assistance to help islands reduce dependence on fossil fuels and increase energy security by implementing energy efficiency measures and leveraging indigenous renewable resources. Hawaii NREL Helps Design LEED Platinum Affordable Housing U.S. Virgin Islands Landmark Solar Deal Completed with NREL Support This tailored technical assistance includes: Establishing baseline energy use Measuring available renewable resources Assessing the viability of various energy

  12. The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs

    SciTech Connect (OSTI)

    Mandal, A.; Verma, U.; Halder, N.; Chakrabarti, S.

    2012-03-15

    Highlight: Black-Right-Pointing-Pointer Coupled InAs/GaAs MQDs with (In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As + GaAs) caps are considered. Black-Right-Pointing-Pointer Monolayer coverage, barrier thickness and growth rate of the dots are the factors. Black-Right-Pointing-Pointer PL peaks for the samples are within 1.1-1.3 {mu}m; significant for IBSCs and lasers. Black-Right-Pointing-Pointer NPTP (non-resonant multi-phonon assisted tunneling process) effect on FWHM of PL. -- Abstract: The self-assembled InAs/GaAs MQDs are widely investigated for their potential application in optoelectronic devices like lasers and photovoltaics. We have explored the effect of QD growth rate and structural parameters like capping layer thickness on the morphology and optical properties of the MQD heterostructures overgrown with a combination capping of InAlGaAs and GaAs. The growth rate of the seed layers in the MQD samples is also varied to investigate its effect in the vertical stacking of the islands. The change in the morphology and the optical properties of the samples due to variation in growth and structural parameters are explained by the presence of strain in the QD structures, which arises due to lattice mismatch.

  13. Freedom Energy (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

    Freedom Energy Place: Rhode Island Website: www.freedomenergytechnologies. Facebook: https:www.facebook.comFreedomEnergyTechnologies References: EIA Form EIA-861 Final Data File...

  14. GEXA Corp. (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

    GEXA Corp. Place: Rhode Island Website: www.gexaenergy.com Twitter: @nationalgridus Facebook: https:www.facebook.comnationalgrid Outage Hotline: 1-800-465-1212 Outage Map:...

  15. Block Island Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    energy Facility Type Commercial Scale Wind Facility Status Proposed Developer Deepwater Wind Location Offshore from Block Island RI Coordinates 41.1, -71.53 Show Map Loading...

  16. ,"Rhode Island Natural Gas Industrial Consumption (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Rhode Island Natural Gas Industrial Consumption (MMcf)",1,"Monthly","102015" ,"Release Date:","12312015" ,"Next...

  17. Prairie Island Indian Community | Department of Energy

    Office of Environmental Management (EM)

    Prairie Island Indian Community (1.42 MB) More Documents & Publications Shipping Radioactive Waste by Rail from Brookhaven National Laboratory Nuclear Fuel Storage and ...

  18. Asian American Pacific Islander Heritage Month

    Broader source: Energy.gov [DOE]

    Generations of Asian Americans and Pacific Islanders (AAPIs) have helped make America what it is today. Their histories recall bitter hardships and proud accomplishments -- from the laborers who...

  19. Nauru Island Effect Detection Data Set

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Long, Chuck

    2010-07-15

    During Nauru99 it was noted that the island was producing small clouds that advected over the ARM site. The Nauru Island Effect Study was run for 1.5 years and the methodology developed to detect the occurrence. Nauru ACRF downwelling SW, wind direction, and air temperature data are used, along with downwelling SW data from Licor radiometers located on the southern end of the island near the airport landing strip. A statistical analysis and comparison of data from the two locations is used to detect the likely occurrence of an island influence on the Nauru ACRF site data

  20. Climate change: Effects on reef island resources

    SciTech Connect (OSTI)

    Oberdorfer, J.A.; Buddemeier, R.W.

    1988-06-27

    The salinity, depth, quantity, and reliability of fresh groundwater resources on coral reef islands and coastlines are environmentally important parameters. Groundwater influences or controls the terrestrial flora, salinity, and nutrient levels in the near-shore benthic environment, the rate and nature of sediment diagenesis, and the density of human habitation. Data from a number of Indo-Pacific reef islands suggest that freshwater inventory is a function of rainfall and island dimensions. A numerical model (SUTRA) has been used to simulate the responses of atoll island groundwater to changes in recharge (precipitation), sea level, and loss of island area due to flooding. The model has been calibrated for Enjebi Island, Enewetak Atoll, where a moderately permeable, water-table aquifer overlies a high-permeability formation. Total freshwater inventory is a monotonic but nonlinear function of recharge. If recharge and island area are constant, rising sea level increases the inventory of fresh water by increasing the useful volume of the aquifer above the high-permeability zone. Flooding of land area reduces the total freshwater inventory approximately in proportion to the loss of recharge area. The most significant results of the model simulation, however, are the findings that the inventory of low-salinity water (and by extrapolation, potable water) is disproportionately sensitive to changes in recharge, island dimensions, or recharge. Island freshwater resources may therefore be unexpectedly vulnerable to climate change.

  1. Aeromagnetic Survey And Interpretation, Ascention Island, South...

    Open Energy Info (EERE)

    And Interpretation, Ascention Island, South Atlantic Ocean Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article: Aeromagnetic Survey And...

  2. Bluewater Wind Rhode Island | Open Energy Information

    Open Energy Info (EERE)

    Island Sector Wind energy Facility Type Offshore Wind Facility Status Proposed Owner NRG Bluewater Wind Developer NRG Bluewater Wind Location Atlantic Ocean RI Coordinates...

  3. Nauru Island Effect Detection Data Set

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Long, Chuck

    During Nauru99 it was noted that the island was producing small clouds that advected over the ARM site. The Nauru Island Effect Study was run for 1.5 years and the methodology developed to detect the occurrence. Nauru ACRF downwelling SW, wind direction, and air temperature data are used, along with downwelling SW data from Licor radiometers located on the southern end of the island near the airport landing strip. A statistical analysis and comparison of data from the two locations is used to detect the likely occurrence of an island influence on the Nauru ACRF site data

  4. Offshore Islands Ltd | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: Offshore Islands Ltd Region: United States Sector: Marine and Hydrokinetic Website: http: This company is listed in the Marine and Hydrokinetic...

  5. Mountain Island Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Mountain Island Energy, LLC Place: Soda Springs, Idaho Zip: 83276 Product: Energy and mining development company focused on next generation "clean technology". References:...

  6. Marshall Islands: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Marshall Islands Population 56,429 GDP Unavailable Energy Consumption Quadrillion Btu 2-letter ISO code MH 3-letter ISO code MHL Numeric ISO code...

  7. Cayman Islands: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Cayman Islands Population Unavailable GDP Unavailable Energy Consumption Quadrillion Btu 2-letter ISO code KY 3-letter ISO code CYM Numeric ISO code...

  8. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  9. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  10. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  11. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  12. Price of Elba Island, GA Natural Gas LNG Imports from Egypt ...

    U.S. Energy Information Administration (EIA) Indexed Site

    Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 11.33 6.74 6.81 9.36 3.72 2010's 4.50 3.97 2.52 -- --

  13. Elba Island, GA LNG Imports (Price) from Qatar (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's -- 4.69 2.84 3.45 --

  14. Elba Island, GA LNG Imports (Price) from Qatar (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5.09 5.13 5.10 4.52 4.45 4.14 4.01 2012 3.65 2.94 2.17 2.00 2.82 3.09 2.67 3.10 3.61 2013 3.34 3.57

  15. Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's 5.12 6.47 9.18 7.03 6.79 9.71 3.73 2010's 4.39 4.20 2.78 3.36 4.33 2.83

  16. Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 4.36 4.82 4.58 3.91 2015 3.08 2.74 2.76 2.76 2016 1.52

  17. Price of Elba Island, GA Natural Gas LNG Imports from Egypt (Nominal

    U.S. Energy Information Administration (EIA) Indexed Site

    Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 4.21 3.67 4.14 4.29 4.22 3.22 2012 2.52

  18. Price of Elba Island, GA Natural Gas LNG Imports from Trinidad and Tobago

    U.S. Energy Information Administration (EIA) Indexed Site

    (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's NA 2000's NA 1.92 3.51 5.12 6.47 8.59 7.14 6.85 9.88 3.75 2010's 4.28 3.86 2.71 3.28 4.33 2.83

  19. Price of Elba Island, GA Natural Gas LNG Imports from Trinidad and Tobago

    U.S. Energy Information Administration (EIA) Indexed Site

    (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 4.15 3.71 4.31 3.78 3.26 3.26 2012 2.30 1.87 2.28 2.64 2.89 2.49 3.62 2013 3.25 3.12 3.48 2014 4.36 4.82 4.58 3.91 2015 3.08 2.74 2.76 2.76 2016 1.52

  20. Minnesota Nuclear Profile - Prairie Island

    U.S. Energy Information Administration (EIA) Indexed Site

    Prairie Island" "Unit","Summer capacity (mw)","Net generation (thousand mwh)","Summer capacity factor (percent)","Type","Commercial operation date","License expiration date" 1,521,"4,655",102.0,"PWR","application/vnd.ms-excel","application/vnd.ms-excel" 2,519,"4,128",90.8,"PWR","application/vnd.ms-excel","application/vnd.ms-excel"

  1. Energy Transition Initiative, Island Energy Snapshot - Grenada (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2015-03-01

    This profile provides a snapshot of the energy landscape of Grenada - a small island nation consisting of the island of Grenada and six smaller islands in the southeastern Caribbean Sea - three of which are inhabited: Grenada, Carriacou, and Petite Martinique.

  2. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  3. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  4. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect (OSTI)

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  5. United States Virgin Islands: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    (CLEAN Partner Activity) Energy Incentives for United States Virgin Islands Solar Water Heater Rebate Program (U.S. Virgin Islands) Southern States Energy Compact (Multiple...

  6. Verdant-Roosevelt Island Tidal Energy | Open Energy Information

    Open Energy Info (EERE)

    Verdant-Roosevelt Island Tidal Energy Jump to: navigation, search Retrieved from "http:en.openei.orgwindex.php?titleVerdant-RooseveltIslandTidalEnergy&oldid680702" ...

  7. Islanded Grid Wind Power Workshop | Department of Energy

    Energy Savers [EERE]

    The event will provide an opportunity for attendees to learn, network, and share information on wind systems in island and islanded grid environments through expert panel ...

  8. Bell Island Space Heating Low Temperature Geothermal Facility...

    Open Energy Info (EERE)

    Space Heating Low Temperature Geothermal Facility Jump to: navigation, search Name Bell Island Space Heating Low Temperature Geothermal Facility Facility Bell Island Sector...

  9. Canary Islands Institute of Technology ITC | Open Energy Information

    Open Energy Info (EERE)

    Canary Islands Institute of Technology ITC Jump to: navigation, search Name: Canary Islands Institute of Technology (ITC) Place: Las Palmas, Spain Zip: 35119 Product: Las...

  10. Working Groups Collaborate on U.S. Virgin Islands Clean Energy Vision and Road Map

    Broader source: Energy.gov [DOE]

    Energy Transition Initiative: Islands lesson learned detailing work done in the U.S. Virgin Islands.

  11. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  12. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  13. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  14. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  15. March 28, 1979: Three Mile Island | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8, 1979: Three Mile Island March 28, 1979: Three Mile Island March 28, 1979: Three Mile Island March 28, 1979 A partial meltdown of the core occurs at one of the two reactors at the Three Mile Island nuclear power plant near Harrisburg, Pennsylvania

  16. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  17. Long Island Smart Energy Corridor

    SciTech Connect (OSTI)

    Mui, Ming

    2015-02-04

    The Long Island Power Authority (LIPA) has teamed with Stony Brook University (Stony Brook or SBU) and Farmingdale State College (Farmingdale or FSC), two branches of the State University of New York (SUNY), to create a “Smart Energy Corridor.” The project, located along the Route 110 business corridor on Long Island, New York, demonstrated the integration of a suite of Smart Grid technologies from substations to end-use loads. The Smart Energy Corridor Project included the following key features: -TECHNOLOGY: Demonstrated a full range of smart energy technologies, including substations and distribution feeder automation, fiber and radio communications backbone, advanced metering infrastructure (AM”), meter data management (MDM) system (which LIPA implemented outside of this project), field tools automation, customer-level energy management including automated energy management systems, and integration with distributed generation and plug-in hybrid electric vehicles. -MARKETING: A rigorous market test that identified customer response to an alternative time-of-use pricing plan and varying levels of information and analytical support. -CYBER SECURITY: Tested cyber security vulnerabilities in Smart Grid hardware, network, and application layers. Developed recommendations for policies, procedures, and technical controls to prevent or foil cyber-attacks and to harden the Smart Grid infrastructure. -RELIABILITY: Leveraged new Smart Grid-enabled data to increase system efficiency and reliability. Developed enhanced load forecasting, phase balancing, and voltage control techniques designed to work hand-in-hand with the Smart Grid technologies. -OUTREACH: Implemented public outreach and educational initiatives that were linked directly to the demonstration of Smart Grid technologies, tools, techniques, and system configurations. This included creation of full-scale operating models demonstrating application of Smart Grid technologies in business and residential

  18. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect (OSTI)

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  19. Aleutian Pribilof Islands Association- 2005 Project

    Broader source: Energy.gov [DOE]

    The Aleutian Pribilof Islands Association (APIA) was chartered as a nonprofit organization in 1976 and is a federally recognized tribal organization of the Aleut people. APIA will conduct an...

  20. N. Mariana Islands- Renewables Portfolio Standard

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Commonwealth of the Northern Mariana Islands enacted its Renewables Portfolio Standard in September 2007, in which a certain percentage of its net electricity sales must come from renewable e...

  1. Rhode Island Renewable Energy Fund (RIREF)

    Broader source: Energy.gov [DOE]

    Rhode Island's PBF is supported by a surcharge on electric and gas customers' bills. Initially, the surcharge was was set at $0.0023 per kilowatt-hour (2.3 mills per kWh) and applied only to...

  2. Community Redevelopment Case Study: Jekyll Island

    Broader source: Energy.gov [DOE]

    Presentation—given at the April 2012 Federal Utility Partnership Working Group (FUPWG) meeting—features photos from a case study about Jekyll Island's community redevelopment project in Georgia.

  3. Categorical Exclusion Determinations: Rhode Island | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The New England Solar cost-Reduction Challenge Partnership CX(s) Applied: A9, A11 Date: 08152013 Location(s): Vermont, New Hampshire, Rhode Island, Massachusetts, Connecticut ...

  4. U.S. Virgin Islands- Net Metering

    Broader source: Energy.gov [DOE]

    In February 2007, the U.S. Virgin Islands Public Services Commission approved a limited net-metering program for residential and commercial photovoltaic (PV), wind-energy or other renewable energ...

  5. Solomon Islands: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Solomon Islands Population 523,000 GDP 840,000,000 Energy Consumption 0.00 Quadrillion Btu 2-letter ISO code SB 3-letter ISO code SLB Numeric ISO...

  6. Faroe Islands: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Faroe Islands Population 48,351 GDP 2,450,000,000 Energy Consumption 0.01 Quadrillion Btu 2-letter ISO code FO 3-letter ISO code FRO Numeric ISO...

  7. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  8. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  9. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  10. Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Across the State Rhode Island EV Initiative Adds Chargers Across the State to someone by E-mail Share Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers Across the State on Facebook Tweet about Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers Across the State on Twitter Bookmark Alternative Fuels Data Center: Rhode Island EV Initiative Adds Chargers Across the State on Google Bookmark Alternative Fuels Data Center: Rhode Island EV Initiative Adds

  11. Energy Department Helps Rhode Island Schools Teach Energy Essentials |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Rhode Island Schools Teach Energy Essentials Energy Department Helps Rhode Island Schools Teach Energy Essentials September 21, 2015 - 4:17pm Addthis Students participating in the NEED Project at Scituate High and Calcutt Middle Schools planted 14 trees in Central Falls, Rhode Island. Students participating in the NEED Project at Scituate High and Calcutt Middle Schools planted 14 trees in Central Falls, Rhode Island. Calcutt Middle School students in Rhode Island played

  12. EERE Success Story-Rhode Island Schools Teach Energy Essentials |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Rhode Island Schools Teach Energy Essentials EERE Success Story-Rhode Island Schools Teach Energy Essentials December 10, 2015 - 11:24am Addthis Students participating in the NEED Project at Scituate High and Calcutt Middle Schools planted 14 trees in Central Falls, Rhode Island. Photo Courtesy | Rhode Island Public Schools Students participating in the NEED Project at Scituate High and Calcutt Middle Schools planted 14 trees in Central Falls, Rhode Island. Photo

  13. Celebrating Asian American Pacific Islander Heritage Month at the Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department | Department of Energy Celebrating Asian American Pacific Islander Heritage Month at the Energy Department Celebrating Asian American Pacific Islander Heritage Month at the Energy Department May 1, 2014 - 4:22pm Addthis Celebrating Asian American Pacific Islander Heritage Month at the Energy Department Each May we celebrate Asian American and Pacific Islander Heritage Month, honoring the accomplishments of Asian Americans, Native Hawaiians, and Pacific Islanders at the Energy

  14. Interconnecting gold islands with DNA origami

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Interconnecting gold islands with DNA origami Authors: Ding, B., Wu, H., Xu, W., Zhao, Z., Liu, Y., Yu, H., and Yan, H. Title: Interconnecting gold islands with DNA origami Source: Nano Lett. Year: 2010 Volume: 10 Pages: 5065-5069 ABSTRACT: Scaffolded DNA origami has recently emerged as a versatile, programmable method to fold DNA into arbitrarily shaped nanostructures that are spatially addressable, with sub-10-nm resolution. Toward functional DNA nanotechnology, one of the key challenges is to

  15. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect (OSTI)

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  16. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  17. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  18. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  19. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  20. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  1. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect (OSTI)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  2. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  3. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)

    SciTech Connect (OSTI)

    Yitamben, E.N.; Arena, D.; Lovejoy, T.C.; Pakhomov, A.B.; Heald, S.M.; Negusse, E.; Ohuchi, F.S.; Olmstead, M.A.

    2011-01-28

    Chromium-doped gallium sesquiselenide, Cr:Ga{sub 2}Se{sub 3}, is a member of a new class of dilute magnetic semiconductors exploiting intrinsic vacancies in the host material. The correlation among room-temperature ferromagnetism, surface morphology, electronic structure, chromium concentration, and local chemical and structural environments in Cr:Ga{sub 2}Se{sub 3} films grown epitaxially on silicon is investigated with magnetometry, scanning tunneling microscopy, photoemission spectroscopy, and x-ray absorption spectroscopy. Inclusion of a few percent chromium in Ga{sub 2}Se{sub 3} results in laminar, semiconducting films that are ferromagnetic at room temperature with a magnetic moment 4{micro}{sub B}/Cr. The intrinsic-vacancy structure of defected-zinc-blende {beta}-Ga{sub 2}Se{sub 3} enables Cr incorporation in a locally octahedral site without disrupting long-range order, determined by x-ray absorption spectroscopy, as well as strong overlap between Cr 3d states and the Se 4p states lining the intrinsic-vacancy rows, observed with photoemission. The highest magnetic moment per Cr is observed near the solubility limit of roughly one Cr per three vacancies. At higher Cr concentrations, islanded, metallic films result, with a magnetic moment that depends strongly on surface morphology. The effective valence is Cr{sup 3+} in laminar films, with introduction of Cr{sup 0} upon islanding. A mechanism is proposed for laminar films whereby ordered intrinsic vacancies mediate ferromagnetism.

  4. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  5. Sculpting the shape of semiconductor heteroepitaxial islands: fromdots to rods

    SciTech Connect (OSTI)

    Robinson, J.T.; Walko, D.A.; Arms, D.A.; Tinberg, D.S.; Evans,P.G.; Cao, Y.; Liddle, J.A.; Rastelli, A.; Schmidt, O.G.; Dubon, O.D.

    2006-06-20

    In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.

  6. The Pd/Fe Interface in the Epitaxial System Pd/Fe/GaAs(001)- 4 x 6

    SciTech Connect (OSTI)

    Budnik, P.S.; Gordon, R.A.; Crozier, E.D.

    2007-01-18

    Magnetic properties of thin magnetic films are strongly affected by the nature of the interface between magnetic and non-magnetic layers. In spintronic devices the extent to which spins are scattered at an interface depends upon interfacial roughness, alloying, and impurities. We present a polarization-dependent XAFS study of a 1Pd/9Fe/GaAs(001)-(4 x 6) structure grown in situ in the MBE facility at the PNC/XOR, APS. To increase the interfacial roughness, the 1ML Pd was grown on the 9 ML Fe without first sputtering and annealing the Fe. An estimate of interfacial roughness, evidence for formation of Pd islands, their height, and the amount of As floating to the Pd surface from the GaAs are given.

  7. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  8. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  9. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  10. Eastern North Atlantic Site, Graciosa Island, Azores

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govSitesEastern North Atlantic ENA Related Links Facilities and Instruments ES&H Guidance Statement Operations Science Field Campaigns Visiting the Site ENA Fact Sheet (PDF, 512KB) Images Information for Guest Scientists Contacts Eastern North Atlantic This view shows Graciosa Island, Azores, Eastern North Atlantic Facility. Graciosa Island: 39° 5' 29.68" N, 28° 1' 32.34" W Altitude: 30.48 meters The new ENA observations site will be situated near the previous AMF deployment. The

  11. New methanol plant for Kharg Island

    SciTech Connect (OSTI)

    Alperowicz, N.

    1992-04-08

    Iran`s National Petrochemical Co. (NPC; Teheran) plans to set up a world scale export-oriented methanol plant on Kharg Island in the Persian Gulf. It says discussions are being held with three Western groups - C. Itoh (Tokyo), H & G (London), and Uhde (Dortmund) - to supply the 660,000-m.t./year facility. The estimated $150-million project would be repaid through export of methanol within three to four years. NPC hopes to conclude talks this year. Strategically located, Kharg Island is described as a good location in peacetime. It already serves as an oil terminal. NPC has an LPG and sulfur complex there.

  12. Washington Island El Coop, Inc | Open Energy Information

    Open Energy Info (EERE)

    Washington Island El Coop, Inc Jump to: navigation, search Name: Washington Island El Coop, Inc Place: Wisconsin Phone Number: 920-847-2541 Website: wiecoop.com Outage Hotline:...

  13. Prince Edward Island: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Prince Edward Island: Energy Resources Jump to: navigation, search Name Prince Edward Island, Canada Equivalent URI DBpedia GeoNames ID 6113358 Coordinates 46.333333, -63.5...

  14. ARM Climate Modeling Best Estimate From Manus Island, PNG (ARMBE...

    Office of Scientific and Technical Information (OSTI)

    From Manus Island, PNG (ARMBE-ATM TWPC1) Title: ARM Climate Modeling Best Estimate From Manus Island, PNG (ARMBE-ATM TWPC1) The ARM CMBE-ATM Xie, McCoy, Klein et al. data file ...

  15. Hess Retail Natural Gas and Elec. Acctg. (Rhode Island) | Open...

    Open Energy Info (EERE)

    Rhode Island) Jump to: navigation, search Name: Hess Retail Natural Gas and Elec. Acctg. Place: Rhode Island References: EIA Form EIA-861 Final Data File for 2010 - File220101...

  16. Noble Americas Energy Solutions LLC (Rhode Island) | Open Energy...

    Open Energy Info (EERE)

    Rhode Island) Jump to: navigation, search Name: Noble Americas Energy Solutions LLC Place: Rhode Island Phone Number: 1 877-273-6772 Website: noblesolutions.com Outage Hotline: 1...

  17. Thermal island destabilization and the Greenwald limit (Journal...

    Office of Scientific and Technical Information (OSTI)

    Because field lines in an island are isolated from the outside plasma, an island can heat or cool preferentially depending on the balance of Ohmic heating and radiation loss in the ...

  18. U.S. Virgin Islands Leadership Embraces Inclusiveness to Ensure...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    in Island Nations), U.S. Virgin Islands A 448-kW PV system installed at the Cyril E. King Airport on St. Thomas in April 2011. Photo by Adam Warren, NREL 18953 U.S. ...

  19. Alternative Fuels Data Center: Rhode Island Transportation Data for

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Alternative Fuels and Vehicles Rhode Island Transportation Data for Alternative Fuels and Vehicles to someone by E-mail Share Alternative Fuels Data Center: Rhode Island Transportation Data for Alternative Fuels and Vehicles on Facebook Tweet about Alternative Fuels Data Center: Rhode Island Transportation Data for Alternative Fuels and Vehicles on Twitter Bookmark Alternative Fuels Data Center: Rhode Island Transportation Data for Alternative Fuels and Vehicles on Google Bookmark

  20. A Presidential Proclamation - Asian American and Pacific Islander Heritage

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Month | Department of Energy A Presidential Proclamation - Asian American and Pacific Islander Heritage Month A Presidential Proclamation - Asian American and Pacific Islander Heritage Month May 1, 2013 - 9:25am Addthis A Presidential Proclamation - Asian American and Pacific Islander Heritage Month BY THE PRESIDENT OF THE UNITED STATES OF AMERICA A PROCLAMATION Each May, our Nation comes together to recount the ways Asian Americans and Pacific Islanders (AAPIs) helped forge our country. We

  1. United States Virgin Islands: St. Thomas (Bovoni) & St. Croix (Longford)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Roberts, O.; Andreas, A.

    Two measurement stations to collect wind data to support future wind power generation in the U.S. Virgin Islands.

  2. Island Energy Tools and Trainings | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Transition Initiative » Island Energy Tools and Trainings Island Energy Tools and Trainings Islands can use the tools below to gather data for decision makers and run scenarios on potential energy investments. Tailored trainings provide in-person, onsite guidance and best practices for implementing clean energy solutions. Tools Island Energy Scenario Tool The ETI Energy Scenario Tool helps communities analyze different pathways to meet a given energy transition goal by modeling the

  3. Post-Closure Monitoring and Inspection Plan for Amchitka Island...

    Office of Legacy Management (LM)

    Amchitka Island ......7 2.1.2 Project Personnel ......* Supporting information to help forecast future site surveillance and monitoring ...

  4. Foster-Glocester Regional School District (Rhode Island) - Financing Profile

    SciTech Connect (OSTI)

    none,

    2008-12-01

    This document is an EnergySmart Schools Financing Profile of Foster-Glocester Regional School District in Rhode Island

  5. United States Virgin Islands: St. Thomas (Bovoni) & St. Croix (Longford)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Roberts, O.; Andreas, A.

    1997-01-01

    Two measurement stations to collect wind data to support future wind power generation in the U.S. Virgin Islands.

  6. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  7. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  8. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  9. Bainbridge Island Summary of Reported Data | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Summary of Reported Data Bainbridge Island Summary of Reported Data Summary of data for Bainbridge Island, a partner in the U.S. Department of Energy's Better Buildings Neighborhood Program. Bainbridge Island Summary of Reported Data (1.44 MB) More Documents & Publications Washington -- SEP Summary of Reported Data NYSERDA Summary of Reported Data Camden, New Jersey Summary of Reported Data

  10. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  11. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  12. Big Island Demonstration Project - Black Liquor

    SciTech Connect (OSTI)

    2006-08-01

    Black liquor is a papermaking byproduct that also serves as a fuel for pulp and paper mills. This project involves the design, construction, and operation of a black liquor gasifier that will be integrated into Georgia-Pacific's Big Island facility in Virginia, a mill that has been in operation for more than 100 years.

  13. Energy Transition Initiative: Islands Playbook (Book)

    SciTech Connect (OSTI)

    Not Available

    2015-01-01

    The Island Energy Playbook (the Playbook) provides an action-oriented guide to successfully initiating, planning, and completing a transition to an energy system that primarily relies on local resources to eliminate a dependence on one or two imported fuels. It is intended to serve as a readily available framework that any community can adapt to organize its own energy transition effort.

  14. Asian American and Pacific Islander Heritage Month

    Broader source: Energy.gov [DOE]

    A celebration of Asians and Pacific Islanders in the United States. The month of May was chosen to commemorate the immigration of the first Japanese to the United States on May 7, 1843, and to mark the anniversary of the completion of the transcontinental railroad on May 10, 1869. The majority of the workers who laid the tracks were Chinese immigrants.

  15. Aleutian Pribilof Islands Association- 2010 Project

    Broader source: Energy.gov [DOE]

    The Aleutian Pribilof Islands Association, Inc. (APIA) will conduct on-site weatherization and energy conservation education and a home energy and safety review in the communities of Akutan, Atka, False Pass, King Cove, Nelson Lagoon, Nikolski, Sand Point, St. George, St. Paul, and Unalaska.

  16. Philippine Islands: a tectonic railroad siding

    SciTech Connect (OSTI)

    Gallagher, J.J. Jr.

    1984-09-01

    In 1976, significant quantities of oil were discovered offshore northwest of Palawan Island by a Philippine-American consortium led by Philippines-Cities Service Inc. This was the first commercial oil found in the Philippine Islands. Other exploration companies had decided that there was no commercial oil in the Philippines. They fell prey to a situation Wallace E. Pratt, who began his career in 1909 in the Philippines, later described: There are many instances where our knowledge, supported in some cases by elaborate and detailed studies has convinced us that no petroleum resources were present in areas which subsequently became sites of important oil fields. Some explorers are blinded by the negative implications of the same knowledge that successful explorers use to find important oil fields. The Palawan discoveries are examples of successful use of knowledge. Recognition that the Philippine Islands are a tectonic railroad siding may be the key to future exploration success. These islands are continental fragments, each with its own individual geologic characteristics, that have moved from elsewhere to their present positions along a major strike-slip zone. Play concepts can be developed in the Philippines for continental fragments in each of the three major present-day tectono-stratigraphic systems that are dominated by strike-slip, but include subduction and extension tectonics, with both carbonate and clastic sediments.

  17. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  18. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  19. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  20. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  1. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  2. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  3. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  4. Geohydrology of Enewetak Atoll islands and reefs

    SciTech Connect (OSTI)

    Buddemeier, R.W.

    1981-05-06

    Extensive tidal studies in island wells and the lagoon at Enewetak Atoll have shown that island ground water dynamics are controlled by a layered aquifer system. The surface aquifer of unconsolidated Holocene material extends to a depth of approximately 15 m, and has a hydraulic conductivity K = 60 m/day. From 15 to 60 m (approximate lagoon depth) the reef structure consists of successive layers of altered Pleistocene materials, with bulk permeability substantially higher than that of the surface aquifer. Because of wave set-up over the windward reef and the limited pass area for outflow at the south end of the atoll, lagoon tides rise in phase with the ocean tides but fall later than the ocean water level. This results in a net lagoon-to-ocean head which can act as the driving force for outflow through the permeable Pleistocene aquifer. This model suggests that fresh water, nutrients or radioactive contaminants found in island ground water or reef interstitial water may be discharged primarily into the ocean rather than the lagoon. Atoll island fresh water resources are controlled by recharge, seawater dilution due to vertical tidal mixing between the surface and deeper aquifers, and by loss due to entrainment by the outflowing water in the deeper aquifers. Estimated lagoon-ot-ocean transit times through the deep aquifer are on the order of a few years, which corresponds well to the freshwater residence time estimates based on inventory and recharge. Islands in close proximity to reef channels have more fresh ground water than others, which is consistent with a locally reduced hydraulic gradient and slower flow through the Pleistocene aquifers.

  5. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  6. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  7. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  8. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  9. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  10. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  11. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  12. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  13. Genomic Island Identification Software v 1.0

    SciTech Connect (OSTI)

    2014-08-25

    Genomic islands are key mobile DNA elements in bacterial evolution, that can distinguish pathogenic strains from each other, or distinguish pathogenic strains from non-pathogenic strains. Their detection in genomes is a challenging problem. We present 3 main software components that attack the island detection problem on two different bases: 1) the preference of islands to insert in chromosomal tRNA or tmRNA genes (islander.pl), and 2) islands? sporadic occurrence among closely related strains. The latter principle is employed in both an algorithm (learnedPhyloblocks.pl) and a visualization method (panGenome.pl). Component islander.pl finds islands based on their preference for a particular target gene type. We annotate each tRNA and tmRNA gene, find fragments of each such gene as candidates for the distal ends of islands, and filter candidates to remove false positives. Component learnedPhyloblocks.pl uses islands found by islander.pl and other methods as a training set to find new islands. Reference genomes are aligned using mugsy, then the ?phylotypes? or patterns of occurrence in the reference set are determined for each position in the target genome, and those phylotypes most enriched in the training set of islands are followed to detect yet more islands. Component panGenome.pl produces a big-data visualization of the chromosomally-ordered ?pan-genome?, that includes every gene of every reference genome (x-axis, pan-genome order; y-axis, reference genomes; color-coding, gene presence/absence etc.), islands appearing as dark patches.

  14. Genomic Island Identification Software v 1.0

    Energy Science and Technology Software Center (OSTI)

    2014-08-25

    Genomic islands are key mobile DNA elements in bacterial evolution, that can distinguish pathogenic strains from each other, or distinguish pathogenic strains from non-pathogenic strains. Their detection in genomes is a challenging problem. We present 3 main software components that attack the island detection problem on two different bases: 1) the preference of islands to insert in chromosomal tRNA or tmRNA genes (islander.pl), and 2) islands’ sporadic occurrence among closely related strains. The latter principlemore » is employed in both an algorithm (learnedPhyloblocks.pl) and a visualization method (panGenome.pl). Component islander.pl finds islands based on their preference for a particular target gene type. We annotate each tRNA and tmRNA gene, find fragments of each such gene as candidates for the distal ends of islands, and filter candidates to remove false positives. Component learnedPhyloblocks.pl uses islands found by islander.pl and other methods as a training set to find new islands. Reference genomes are aligned using mugsy, then the “phylotypes” or patterns of occurrence in the reference set are determined for each position in the target genome, and those phylotypes most enriched in the training set of islands are followed to detect yet more islands. Component panGenome.pl produces a big-data visualization of the chromosomally-ordered “pan-genome”, that includes every gene of every reference genome (x-axis, pan-genome order; y-axis, reference genomes; color-coding, gene presence/absence etc.), islands appearing as dark patches.« less

  15. Islander: A database of precisely mapped genomic islands in tRNA and tmRNA genes

    SciTech Connect (OSTI)

    Hudson, Corey M.; Lau, Britney Y.; Williams, Kelly P.

    2014-11-05

    Genomic islands are mobile DNAs that are major agents of bacterial and archaeal evolution. Integration into prokaryotic chromosomes usually occurs site-specifically at tRNA or tmRNA gene (together, tDNA) targets, catalyzed by tyrosine integrases. This splits the target gene, yet sequences within the island restore the disrupted gene; the regenerated target and its displaced fragment precisely mark the endpoints of the island. We applied this principle to search for islands in genomic DNA sequences. Our algorithm identifies tDNAs, finds fragments of those tDNAs in the same replicon and removes unlikely candidate islands through a series of filters. A search for islands in 2168 whole prokaryotic genomes produced 3919 candidates. The website Islander (recently moved to http://bioinformatics.sandia.gov/islander/) presents these precisely mapped candidate islands, the gene content and the island sequence. The algorithm further insists that each island encode an integrase, and attachment site sequence identity is carefully noted; therefore, the database also serves in the study of integrase site-specificity and its evolution.

  16. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  17. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  18. Pennsylvania Nuclear Profile - Three Mile Island

    U.S. Energy Information Administration (EIA) Indexed Site

    Three Mile Island" "Unit","Summer capacity (mw)","Net generation (thousand mwh)","Summer capacity factor (percent)","Type","Commercial operation date","License expiration date" 1,805,"6,634",94.1,"PWR","application/vnd.ms-excel","application/vnd.ms-excel" ,805,"6,634",94.1

  19. Recovery Act State Memos Mariana Islands

    Broader source: Energy.gov (indexed) [DOE]

    Mariana Islands For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  20. Recovery Act State Memos Rhode Island

    Broader source: Energy.gov (indexed) [DOE]

    Rhode Island For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  1. Recovery Act State Memos Virgin Islands

    Broader source: Energy.gov (indexed) [DOE]

    Virgin Islands For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  2. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  3. Suggested guidelines for anti-islanding screening.

    SciTech Connect (OSTI)

    Ellis, Abraham; Ropp, Michael

    2012-02-01

    As increasing numbers of photovoltaic (PV) systems are connected to utility systems, distribution engineers are becoming increasingly concerned about the risk of formation of unintentional islands. Utilities desire to keep their systems secure, while not imposing unreasonable burdens on users wishing to connect PV. However, utility experience with these systems is still relatively sparse, so distribution engineers often are uncertain as to when additional protective measures, such as direct transfer trip, are needed to avoid unintentional island formation. In the absence of such certainty, utilities must err on the side of caution, which in some cases may lead to the unnecessary requirement of additional protection. The purpose of this document is to provide distribution engineers and decision makers with guidance on when additional measures or additional study may be prudent, and also on certain cases in which utilities may allow PV installations to proceed without additional study because the risk of an unintentional island is extremely low. The goal is to reduce the number of cases of unnecessary application of additional protection, while giving utilities a basis on which to request additional study in cases where it is warranted.

  4. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  5. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  6. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  7. Islander: A database of precisely mapped genomic islands in tRNA and tmRNA genes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hudson, Corey M.; Lau, Britney Y.; Williams, Kelly P.

    2014-11-05

    Genomic islands are mobile DNAs that are major agents of bacterial and archaeal evolution. Integration into prokaryotic chromosomes usually occurs site-specifically at tRNA or tmRNA gene (together, tDNA) targets, catalyzed by tyrosine integrases. This splits the target gene, yet sequences within the island restore the disrupted gene; the regenerated target and its displaced fragment precisely mark the endpoints of the island. We applied this principle to search for islands in genomic DNA sequences. Our algorithm identifies tDNAs, finds fragments of those tDNAs in the same replicon and removes unlikely candidate islands through a series of filters. A search for islandsmore » in 2168 whole prokaryotic genomes produced 3919 candidates. The website Islander (recently moved to http://bioinformatics.sandia.gov/islander/) presents these precisely mapped candidate islands, the gene content and the island sequence. The algorithm further insists that each island encode an integrase, and attachment site sequence identity is carefully noted; therefore, the database also serves in the study of integrase site-specificity and its evolution.« less

  8. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  9. SURFACE REMEDIATION IN THE ALEUTIAN ISLANDS: A CASE STUDY OF AMCHITKA ISLAND, ALASKA

    SciTech Connect (OSTI)

    Giblin, M. O.; Stahl, D. C.; Bechtel, J. A.

    2002-02-25

    Amchitka Island, Alaska, was at one time an integral player in the nation's defense program. Located in the North Pacific Ocean in the Aleutian Island archipelago, the island was intermittently inhabited by several key government agencies, including the U.S. Army, the U.S. Atomic Energy Commission (predecessor agency to the U.S. Department of Energy), and the U.S. Navy. Since 1993, the U.S. Department of Energy (DOE) has conducted extensive investigations on Amchitka to determine the nature and extent of contamination resulting from historic nuclear testing. The uninhabited island was the site of three high-yield nuclear tests from 1965 to 1971. These test locations are now part of the DOE's National Nuclear Security Administration Nevada Operations Office's Environmental Management Program. In the summer of 2001, the DOE launched a large-scale remediation effort on Amchitka to perform agreed-upon corrective actions to the surface of the island. Due to the lack of resources available on Amchitka and logistical difficulties with conducting work at such a remote location, the DOE partnered with the Navy and U.S. Army Corps of Engineers (USACE) to share certain specified costs and resources. Attempting to negotiate the partnerships while organizing and implementing the surface remediation on Amchitka proved to be a challenging endeavor. The DOE was faced with unexpected changes in Navy and USACE scope of work, accelerations in schedules, and risks associated with construction costs at such a remote location. Unfavorable weather conditions also proved to be a constant factor, often slowing the progress of work. The Amchitka Island remediation project experience has allowed the DOE to gain valuable insights into how to anticipate and mitigate potential problems associated with future remediation projects. These lessons learned will help the DOE in conducting future work more efficiently, and can also serve as a guide for other agencies performing similar work.

  10. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  11. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect (OSTI)

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  12. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  13. Aleutian Pribilof Islands Association - 2012 Project | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Aleutian Pribilof Islands Association - 2012 Project Aleutian Pribilof Islands Association - 2012 Project Summary Residents of False Pass have long known the power of the water that rushes daily through Isanotski Pass. A 2009 study funded by the Alaska Energy Authority confirmed the need to study more fully the area's potential for tidal power. To this end, and to address their fossil fuel reduction goal, many Aleut organizations, through the Aleutian Pribilof Island Association Inc. (APIA),

  14. Project Reports for Aleutian Pribilof Islands Association - 2005 Project |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Aleutian Pribilof Islands Association - 2005 Project Project Reports for Aleutian Pribilof Islands Association - 2005 Project The Aleutian Pribilof Islands Association (APIA) will conduct an economic and technical feasibility study for six communities on wind-power/diesel-plant development. Learn more about this project or find details in the below status reports. October 2005 status report (5.68 MB) October 2006 status report (13.8 MB) November 2011 status report (3.16

  15. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

    SciTech Connect (OSTI)

    Plankina, S. M.; Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Kalentyeva, I. L.; Nezhdanov, A. V.; Chunin, I. I.; Yunin, P. A.

    2015-01-15

    The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

  16. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  17. Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

    SciTech Connect (OSTI)

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-15

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

  18. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  19. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  20. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  1. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  2. Urban Surfaces and Heat Island Mitigation Potentials (Journal...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Urban Surfaces and Heat Island Mitigation Potentials Citation Details ... and urban vegetation (trees, grass, shrubs) on the meteorology and air quality of a city. ...

  3. Long Island, Maine: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Long Island, Maine: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 43.6842491, -70.1711588 Show Map Loading map... "minzoom":false,"mappingser...

  4. South Jersey Energy Company (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

    Place: Rhode Island Website: www1.nationalgridus.comRhodeI Twitter: @nationalgridus Facebook: https:www.facebook.comnationalgrid Outage Hotline: 1-800-465-1212 Outage Map:...

  5. Liberty Power Corp. (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

    Place: Rhode Island Website: www.libertypowercorp.combusin Twitter: @libertypower Facebook: https:www.facebook.comLibertyPowerCorp Outage Hotline: 1-800-465-1212 Outage Map:...

  6. Direct Energy Services (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

    Place: Rhode Island Website: www.business.directenergy.com Twitter: @nationalgridus Facebook: https:www.facebook.comnationalgrid Outage Hotline: 1-800-465-1212 Outage Map:...

  7. Constellation NewEnergy, Inc (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

    Place: Rhode Island Website: www.constellation.compagesde Twitter: @constellationeg Facebook: https:www.facebook.comConstellationEnergy References: EIA Form EIA-861 Final Data...

  8. Glacial Energy Holdings (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

    Holdings Place: Rhode Island Website: www.glacialenergy.com Twitter: @nationalgridus Facebook: https:www.facebook.comnationalgrid Outage Hotline: 1-800-465-1212 Outage Map:...

  9. ,"Rhode Island Natural Gas LNG Storage Additions (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Rhode Island Natural Gas LNG Storage Additions (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  10. ,"Rhode Island Natural Gas LNG Storage Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Rhode Island Natural Gas LNG Storage Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  11. Commonwealth of Northern Mariana Islands Initial Technical Assessment

    SciTech Connect (OSTI)

    Baring-Gould, I.; Hunsberger, R.; Visser, C.; Voss, P.

    2011-07-01

    This document is an initial energy assessment for the Commonwealth of the Northern Mariana Islands (CNMI), the first of many steps in developing a comprehensive energy strategy.

  12. Rhode Island High Resolution Wind Resource - Datasets - OpenEI...

    Open Energy Info (EERE)

    Detailed license and usage information for this dataset Preview Download 50m GIS NREL Rhode Island energy high resoltuion renewable shapefile wind wind data wind...

  13. Tiverton, Rhode Island: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Rhode Island.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  14. Barrington, Rhode Island: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Rhode Island.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  15. Rhode Island/Wind Resources | Open Energy Information

    Open Energy Info (EERE)

    >> Rhode Island Wind Resources WindTurbine-icon.png Small Wind Guidebook * Introduction * First, How Can I Make My Home More Energy Efficient? * Is Wind Energy Practical...

  16. ,"Rhode Island Natural Gas Industrial Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Rhode Island Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)",1,"Monthly","102015" ,"Release Date:","12...

  17. MHK Projects/Cape Islands Tidal Energy Project | Open Energy...

    Open Energy Info (EERE)

    Islands Tidal Energy Project < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","type"...

  18. MHK Projects/Roosevelt Island Tidal Energy RITE | Open Energy...

    Open Energy Info (EERE)

    Roosevelt Island Tidal Energy RITE < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3",...

  19. MHK Projects/Treat Island Tidal | Open Energy Information

    Open Energy Info (EERE)

    Treat Island Tidal < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP"...

  20. ARM - PI Product - Nauru Island Effect Detection Data Set

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ProductsNauru Island Effect Detection Data Set ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send PI Product : Nauru Island Effect Detection Data Set During Nauru99 it was noted that the island was producing small clouds that advected over the ARM site. The Nauru Island Effect Study was run for 1.5 years and the methodology developed to detect the occurrence. Nauru ACRF downwelling SW, wind direction, and air

  1. Rhode Island Natural Gas Underground Storage Injections All Operators...

    U.S. Energy Information Administration (EIA) Indexed Site

    Underground Storage Injections All Operators (Million Cubic Feet) Rhode Island Natural Gas Underground Storage Injections All Operators (Million Cubic Feet) Decade Year-0 Year-1...

  2. MHK Projects/Greenwave Rhode Island Ocean Wave Energy Project...

    Open Energy Info (EERE)

    Greenwave Rhode Island Ocean Wave Energy Project < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":...

  3. Rhode Island Energy Group LLC | Open Energy Information

    Open Energy Info (EERE)

    Group LLC Jump to: navigation, search Name: Rhode Island Energy Group LLC Address: PO Box 340 Place: Portsmouth Zip: 2871 Region: United States Sector: Marine and Hydrokinetic...

  4. Island County, Washington: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Island County, Washington: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 48.19765, -122.579457 Show Map Loading map... "minzoom":false,"mappi...

  5. Project Reports for Aleutian Pribilof Islands Association - 2005...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The Aleutian Pribilof Islands Association (APIA) will conduct an economic and technical feasibility study for six communities on wind-powerdiesel-plant development. Learn more ...

  6. An Audio-Magnetotelluric Investigation In Terceira Island (Azores...

    Open Energy Info (EERE)

    Audio-Magnetotelluric Investigation In Terceira Island (Azores) Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article: An Audio-Magnetotelluric...

  7. Rhode Island's 2nd congressional district: Energy Resources ...

    Open Energy Info (EERE)

    Registered Energy Companies in Rhode Island's 2nd congressional district Cookson Electronics Jefferson Renewable Energy Tomorrow BioFuels LLC Retrieved from "http:...

  8. Providence, Rhode Island: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    district.12 Registered Energy Companies in Providence, Rhode Island Cookson Electronics References US Census Bureau Incorporated place and minor civil division...

  9. Providence County, Rhode Island: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Companies in Providence County, Rhode Island American Battery Charging Inc Cookson Electronics Evans Capacitor Company Tomorrow BioFuels LLC Energy Generation Facilities in...

  10. Thermal island destabilization and the Greenwald limit (Journal...

    Office of Scientific and Technical Information (OSTI)

    Details In-Document Search This content will become publicly available on February 24, 2016 Title: Thermal island destabilization and the Greenwald limit Authors: White, R....

  11. Chebeague Island, Maine: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:en.openei.orgwindex.php?titleChebeagueIsland,Maine&oldi...

  12. Bay Harbor Islands, Florida: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Bay Harbor Islands is a town in Miami-Dade County, Florida. It falls under Florida's 20th congressional district.12 References US Census Bureau Incorporated place and...

  13. MHK Projects/Turkey Island | Open Energy Information

    Open Energy Info (EERE)

    Turkey Island < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoo...

  14. Long Island HTS Power Cable | Department of Energy

    Office of Environmental Management (EM)

    Long Island HTS Power Cable This project involves the demonstration of a hightemperature ... HTS Cable Projects High-Temperature Superconductivity Cable Demonstration Projects ...

  15. MHK Projects/Stradbroke Island | Open Energy Information

    Open Energy Info (EERE)

    1 Project Details Isolated from the mainland, South Stradbroke Island on the Queensland Gold Coast, Australia, is dependent upon diesel generation for electricity supply. A trial...

  16. MHK Projects/Pike Island | Open Energy Information

    Open Energy Info (EERE)

    Monitoring and Mitigation Efforts See Tethys << Return to the MHK database homepage Retrieved from "http:en.openei.orgwindex.php?titleMHKProjectsPikeIsland&oldid676758...

  17. Harnessing Sun, Wind and Lava for Islands' Energy Needs | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Cue in the Energy Development in Island Nations (EDIN) project - this international ... and is currently conducting a wind forecast to assess the potential of local trade ...

  18. Aeromagnetic study of the Island of Hawaii | Open Energy Information

    Open Energy Info (EERE)

    Aeromagnetic study of the Island of Hawaii Abstract NA Authors T.G. Hildenbrand, J. G. Rosenbaum and V. P. Kanalikaua Published Journal Journal of Geophysical Research,...

  19. MHK Projects/Cat Island Project | Open Energy Information

    Open Energy Info (EERE)

    Cat Island Project < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP"...

  20. Comparison of Secondary Islands in Collisional Reconnection to Hall Reconnection

    SciTech Connect (OSTI)

    Shepherd, L. S.; Cassak, P. A.

    2010-07-02

    Large-scale resistive Hall-magnetohydrodynamic simulations of the transition from Sweet-Parker (collisional) to Hall (collisionless) magnetic reconnection are presented; the first to separate secondary islands from collisionless effects. Three main results are described. There exists a regime with secondary islands but without collisionless effects, and the reconnection rate is faster than Sweet-Parker, but significantly slower than Hall reconnection. This implies that secondary islands do not cause the fastest reconnection rates. The onset of Hall reconnection ejects secondary islands from the vicinity of the X line, implying that energy is released more rapidly during Hall reconnection. Coronal applications are discussed.

  1. Northern Mariana Islands Recovery Act State Memo | Department...

    Office of Environmental Management (EM)

    Northern Mariana Islands Recovery Act State Memo The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the nation's energy and environmental ...

  2. Rhode Island Recovery Act State Memo | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Rhode Island has substantial natural resources, including wind and biomass. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the nation's ...

  3. Virgin Islands Recovery Act State Memo | Department of Energy

    Energy Savers [EERE]

    Virgin Islands Recovery Act State Memo The American Recovery & Reinvestment Act( ARRA) is making a meaningful down payment on the nation's energy and environmental future. The ...

  4. ,"Rhode Island Natural Gas Price Sold to Electric Power Consumers...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Rhode Island Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic...

  5. ,"Rhode Island Natural Gas Deliveries to Electric Power Consumers...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Rhode Island Natural Gas Deliveries to Electric Power Consumers (MMcf)",1,"Monthly","102015" ,"Release...

  6. Title list publicly available documents: Three Mile Island Unit...

    Office of Scientific and Technical Information (OSTI)

    Subject: 21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS THREE MILE ISLAND-2 REACTOR; BIBLIOGRAPHIES; REACTOR LICENSING; DC - 78 - Light Water Reactor Technology Word Cloud More ...

  7. Newby Island II Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    Facility Facility Newby Island II Sector Biomass Facility Type Landfill Gas Location Santa Clara County, California Coordinates 37.2938907, -121.7195459 Show Map Loading...

  8. ,"Rhode Island Natural Gas Consumption by End Use"

    U.S. Energy Information Administration (EIA) Indexed Site

    Consumption by End Use" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Rhode Island ...

  9. Rock Island County, Illinois: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Illinois Hillsdale, Illinois Milan, Illinois Moline, Illinois Oak Grove, Illinois Port Byron, Illinois Rapids City, Illinois Reynolds, Illinois Rock Island Arsenal, Illinois...

  10. Energy Transition Initiative: Island Energy Snapshot - Dominican Republic

    SciTech Connect (OSTI)

    2015-09-01

    This profile provides a snapshot of the energy landscape of the Dominican Republic, a Caribbean nation that shares the island of Hispaniola with Haiti to the west.

  11. Cumberland Hill, Rhode Island: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Hill, Rhode Island: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 41.9745431, -71.4670043 Show Map Loading map... "minzoom":false,"mappingser...

  12. ,"Rhode Island Natural Gas Pipeline and Distribution Use Price...

    U.S. Energy Information Administration (EIA) Indexed Site

    ies","Frequency","Latest Data for" ,"Data 1","Rhode Island Natural Gas Pipeline and Distribution Use Price (Dollars per Thousand Cubic Feet)",1,"Annual",2005 ,"Release Date:","9...

  13. East Providence, Rhode Island: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    district.12 Registered Energy Companies in East Providence, Rhode Island Evans Capacitor Company References US Census Bureau Incorporated place and minor civil...

  14. "New Hampshire"," X"," X" "Rhode Island"," X"," X"

    U.S. Energy Information Administration (EIA) Indexed Site

    (PADD 1A)" "Connecticut"," X"," X" "Maine"," X"," X" "Massachusetts"," X"," X" "New Hampshire"," X"," X" "Rhode Island"," X"," X" "Vermont"," X"," X" "Central Atlantic (PADD ...

  15. ,"Rhode Island Natural Gas LNG Storage Net Withdrawals (MMcf...

    U.S. Energy Information Administration (EIA) Indexed Site

    LNG Storage Net Withdrawals (MMcf)" ,"Click worksheet name or tab at bottom for data" ... for" ,"Data 1","Rhode Island Natural Gas LNG Storage Net Withdrawals ...

  16. Dominica Island-NREL Cooperation | Open Energy Information

    Open Energy Info (EERE)

    Island-NREL Cooperation AgencyCompany Organization National Renewable Energy Laboratory Sector Energy Focus Area Wind Topics Background analysis Website http:...

  17. Rhode Island Renewable Electric Power Industry Net Generation...

    U.S. Energy Information Administration (EIA) Indexed Site

    Rhode Island" "Energy Source",2006,2007,2008,2009,2010 "Geothermal","-","-","-","-","-" "Hydro Conventional",6,4,5,5,4 "Solar","-","-","-","-","-" "Wind","-","-","-","-",3 "Wood...

  18. Refractive index of erbium doped GaN thin films

    SciTech Connect (OSTI)

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  19. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  20. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  1. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  2. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  3. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  4. Aleutian Pribilof Islands Association - Wind Energy Development

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6 By Connie Fredenberg Aleutian Pribilof Islands Association 201 East 3 rd Avenue Anchorage, AK 99501 " " The Birthplace of the Wind The Birthplace of the Wind " " PROJECT STATUS Phase Met Tower Status Data Collection Feasibility Study Status Funding Status Construction Planned Sand Point TDX Power Installed 5/04 Complete 20 mph Complete AEA $1.47 million Additional ? Summer 07 St. George City of St. George Installed 8/04 Complete 21.5 mph Complete ? ? King Cove City of King

  5. ARM - News from the Gan Island Deployment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    News from the Gan Island Deployment Related Links amie.png 34h AMIE Home cindy.png 50h CINDY2011 dynamo.png 34h DYNAMO ARM Data Discovery Browse Data Outreach News & Press Blog Backgrounder (PDF, 1.2MB) Education Flyer (PDF, 2.0MB) Images ARM flickr site Official AMIE Logo AMIE Gear Experiment Planning Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB) Science

  6. ARM - AMIE Gan Island - Data Plots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gan Related Links amie.png 34h AMIE Home cindy.png 50h CINDY2011 dynamo.png 34h DYNAMO ARM Data Discovery Browse Data Outreach News & Press Blog Backgrounder (PDF, 1.2MB) Education Flyer (PDF, 2.0MB) Images ARM flickr site Official AMIE Logo AMIE Gear Experiment Planning Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB) Science Plan - Gan Island Site (PDF, 2.0

  7. Rhode Island Renewable Electric Power Industry Statistics

    U.S. Energy Information Administration (EIA) Indexed Site

    Rhode Island Primary Renewable Energy Capacity Source Municipal Solid Waste/Landfill Gas Primary Renewable Energy Generation Source Municipal Solid Waste/Landfill Gas Capacity (megawatts) Value Percent of State Total Total Net Summer Electricity Capacity 1,782 100.0 Total Net Summer Renewable Capacity 28 1.6 Geothermal - - Hydro Conventional 3 0.2 Solar - - Wind 2 0.1 Wood/Wood Waste - - MSW/Landfill Gas 24 1.3 Other Biomass - - Generation (thousand megawatthours) Total Electricity Net

  8. Rhode Island Renewable Electric Power Industry Statistics

    U.S. Energy Information Administration (EIA) Indexed Site

    Rhode Island" "Primary Renewable Energy Capacity Source","Municipal Solid Waste/Landfill Gas" "Primary Renewable Energy Generation Source","Municipal Solid Waste/Landfill Gas" "Capacity (megawatts)","Value","Percent of State Total" "Total Net Summer Electricity Capacity",1782,100 "Total Net Summer Renewable Capacity",28,1.6 " Geothermal","-","-" " Hydro

  9. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  10. Long Island New York City Offshore Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    Long Island New York City Offshore Wind Farm Jump to: navigation, search Name Long Island New York City Offshore Wind Farm Facility Long Island New York City Offshore Wind Farm...

  11. U.S. Virgin Islands- Renewable Energy Feed-in-Tariff

    Broader source: Energy.gov [DOE]

    There is a 10 MW limit for aggregate production via feed-in-tariff contracts on the islands of St. Thomas, St. John, Water Island, and other offshore keys and islands and a similar 5 MW limit for...

  12. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  13. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  14. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  15. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  16. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  17. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  18. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  19. Wind resource assessment: San Nicolas Island, California

    SciTech Connect (OSTI)

    McKenna, E.; Olsen, T.L.

    1996-01-01

    San Nicolas Island (SNI) is the site of the Navy Range Instrumentation Test Site which relies on an isolated diesel-powered grid for its energy needs. The island is located in the Pacific Ocean 85 miles southwest of Los Angeles, California and 65 miles south of the Naval Air Weapons Station (NAWS), Point Mugu, California. SNI is situated on the continental shelf at latitude N33{degree}14` and longitude W119{degree}27`. It is approximately 9 miles long and 3.6 miles wide and encompasses an area of 13,370 acres of land owned by the Navy in fee title. Winds on San Nicolas are prevailingly northwest and are strong most of the year. The average wind speed is 7.2 m/s (14 knots) and seasonal variation is small. The windiest months, March through July, have wind speeds averaging 8.2 m/s (16 knots). The least windy months, August through February, have wind speeds averaging 6.2 m/s (12 knots).

  20. fe0013961-GaTech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  1. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  2. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  3. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  4. Oahu Wind Integration and Transmission Study (OWITS): Hawaiian Islands

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transmission Interconnection Project | Department of Energy Oahu Wind Integration and Transmission Study (OWITS): Hawaiian Islands Transmission Interconnection Project Oahu Wind Integration and Transmission Study (OWITS): Hawaiian Islands Transmission Interconnection Project This report provides an independent review included an initial evaluation of the technical configuration and capital costs of establishing an undersea cable system and examining impacts to the existing electric

  5. Reduction of Islands in Full-pressure Stellarator Equilibria

    SciTech Connect (OSTI)

    S.R. Hudson; D.A. Monticello; A.H. Reiman

    2001-04-30

    The control of magnetic islands is a crucial issue in designing Stellarators. Islands are associated with resonant radial magnetic fields at rational rotational-transform surfaces and can lead to chaos and poor plasma confinement. In this article, we show that variations in the resonant fields of a full-pressure stellarator equilibrium can be related to variations in the boundary via a coupling matrix, and inversion of this matrix determines a boundary modification for which the island content is significantly reduced. The numerical procedure is described and the results of island optimization are presented. Equilibria with islands are computed using the Princeton Iterative Equilibrium Solver, and resonant radial fields are calculated via construction of quadratic-flux-minimizing surfaces. A design candidate for the National Compact Stellarator Experiment [Phys. Plasmas 8, 2001], which has a large island, is used to illustrate the technique. Small variations in the boundary shape are used to reduce island size and to reverse the phase of a major island chain.

  6. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  7. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  8. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  9. Rhode Island Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    for your school's state, county, city, or district. For more information, please visit the High School Coach page. Rhode Island Region High School Regional Rhode Island Northeast...

  10. Rhode Island Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    state, county, city, or district. For more information, please visit the Middle School Coach page. Rhode Island Region Middle School Regional Rhode Island Massachusetts Regional...

  11. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    SciTech Connect (OSTI)

    Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Iyer, Shanthi; Reynolds, C. Lewis; Liu, Yang

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  12. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  13. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  14. Energy Development in Island Nations (EDIN), Partnering to Increase Island Energy Security Around the World (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2010-06-01

    This fact sheet provides an overview of the international partnership for Energy Development in Island nations, including mission, goals, and organization. It also includes background on EDIN's three pilot projects: U.S. Virgin Islands, Iceland-Dominica Collaboration, and New Zealand-Geothermal Potential in the Pacific.

  15. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  16. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  17. Rhode Island Heat Content of Natural Gas Consumed

    Gasoline and Diesel Fuel Update (EIA)

    10 2011 2012 2013 2014 2015 View History U.S. 4,782,412 4,713,777 4,149,519 4,897,372 5,087,314 4,616,391 1930-2015 Alabama 42,215 36,582 27,580 35,059 38,971 31,794 1967-2015 Alaska 18,714 20,262 21,380 19,215 17,734 18,468 1967-2015 Arizona 37,812 38,592 34,974 39,692 32,397 34,215 1967-2015 Arkansas 36,240 33,737 26,191 34,989 38,127 30,803 1967-2015 California 494,890 512,565 477,931 481,773 397,489 404,869 1967-2015 Colorado 131,224 130,116 115,695 134,936 132,106 125,433 1967-2015

  18. Distributed Wind Case Study: Cross Island Farms, Wellesley Island, New York

    SciTech Connect (OSTI)

    2012-04-30

    Installing a small wind turbine can sometimes be challenging due to economics, zoning issues, public perception, and other barriers. Persistence and innovation, however, can result in a successful installation. Dani Baker and David Belding own Cross Island Farms, a 102-acre certified organic farm on Wellesley Island in northern New York. In 2009, they took their interest in renewable energy to the next level by researching the logistics of a small wind installation on their land to make their farm even more sustainable. Their renewable energy system consists of one 10-kilowatt Bergey Excel wind turbine, a solar array, and a propane-powered generator. This case study describes funding for the project and the installation process.

  19. Distributed Wind Case Study: Cross Island Farms, Wellesley Island, New York (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-04-01

    Installing a small wind turbine can sometimes be difficult due to economics, zoning issues, public perception, and other barriers. Persistence and innovation, however, can result in a successful installation. Dani Baker and David Belding own Cross Island Farms, a 102-acre certified organic farm on Wellesley Island in northern New York. In 2009, they took their interest in renewable energy to the next level by researching the logistics of a small wind installation on their land to make their farm even more sustainable. Their renewable energy system consists of one 10-kilowatt Bergey Excel wind turbine, a solar array, and a propane-powered generator. This case study describes funding for the project and the installation process.

  20. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  1. Rhode Island Number of Natural Gas Consumers

    Gasoline and Diesel Fuel Update (EIA)

    Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2010 7 7 7 7 7 7 7 7 7 7 7 7 2011 7 7 7 7 7 7 7 7 7 7 7 7 2012 7 7 7 7 7 7 7 7 7 7 7 7 2013 6 6 6 6 6 6 6 6 6 6 6 6 2014 7 7 7 7 7 7 7 7 7 7 7 7 2015 8 7 8 8 8 7 7 7 7 7 7 7 2016 8 7 8 8 8 8 Feet)

    Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Rhode Island Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 3.87 3.77 3.88 7.09 7.09

  2. Subsidence at the Weeks Island SPR Facility

    SciTech Connect (OSTI)

    Bauer, S.J.

    1999-01-01

    The elevation change data measured at the Weeks Island SPR site over the last 16+ years has been studied and analyzed. The subsidence rate is not constant with time and while the subsidence rate may have increased slightly during the past several years, recently the rate has increased more dramatically. The most recent increase comes at a time when the Strategic Petroleum Reserve (SPR) storage mine had been emptied of oil and was in the process of being refilled with brine. Damage to surface structures that has been observed during the past 12-18 months is attributed to the continued subsidence and dtierential subsidence across structures. The recent greater subsidence rates were unanticipated according to analysis results and will be used to aid further subsidence model development.

  3. OTEC for the islands-A perspective

    SciTech Connect (OSTI)

    Craven, J.P.

    1980-12-01

    The potential for OTEC as an energy source for island communities is examined in the context of Pacific communities. It is demonstrated that OTEC development there is interrelated with the OTEC development for the US mainland. It is also demonstrated that this development will be required to meet the demand for hydrogen-rich fuels both for fuel cells and as a raw material for synthetic fuels. It is then shown that the development of OTEC for the Caribbean is an intermediate step, falling between Pacific and mainland requirements. A four-stage strategy is then outlined which should result in a timely and cost-effective development of this important world energy resource.

  4. The Marshall Islands Data Management Program

    SciTech Connect (OSTI)

    Stoker, A.C.; Conrado, C.L.

    1995-09-01

    This report is a resource document of the methods and procedures used currently in the Data Management Program of the Marshall Islands Dose Assessment and Radioecology Project. Since 1973, over 60,000 environmental samples have been collected. Our program includes relational database design, programming and maintenance; sample and information management; sample tracking; quality control; and data entry, evaluation and reduction. The usefulness of scientific databases involves careful planning in order to fulfill the requirements of any large research program. Compilation of scientific results requires consolidation of information from several databases, and incorporation of new information as it is generated. The success in combining and organizing all radionuclide analysis, sample information and statistical results into a readily accessible form, is critical to our project.

  5. Individual Radiation Protection Monitoring in the Marshall Islands: Enewetak Island Resettlement Support (May-December 2001)

    SciTech Connect (OSTI)

    Hamilton, T; Hickman, D; Conrado, C; Brown, T; Brunk, J; Marchetti, A; Cox, C; Martinelli, R; Kehl, S; Johannes, K; Henry, D; Bell, R T; Petersen, G

    2002-06-01

    The US Department of Energy (DOE) has recently implemented a series of strategic initiatives to address long-term radiological surveillance needs at former US test sites in the Marshall Islands. The plan is to engage local atoll communities in developing shared responsibilities for implementing radiation protection programs for resettled and resettling populations. Using pooled resources of the US Department of Energy and local atoll governments, individual radiation protection programs have been developed in whole-body counting and plutonium urinalysis to assess potential intakes of radionuclides from residual fallout contamination. The whole-body counting systems are operated and maintained by Marshallese technicians. Samples of urine are collected from resettlement workers and island residents under controlled conditions and analyzed for plutonium isotopes at the Lawrence Livermore National Laboratory using advanced accelerator based measurement technologies. This web site provides an overview of the methodologies, a full disclosure of the measurement data, and a yearly assessment of estimated radiation doses to resettlement workers and island residents.

  6. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  7. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  8. Raman spectroscopy of GaP/GaNP core/shell nanowires

    SciTech Connect (OSTI)

    Dobrovolsky, A.; Chen, W. M.; Buyanova, I. A.; Sukrittanon, S.; Kuang, Y. J.; Tu, C. W.

    2014-11-10

    Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm{sup −1} that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.

  9. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  10. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali Goswami, Srijit Ghosh, Arindam; Baenninger, Matthias; Farrer, Ian; Ritchie, David A.; Tripathi, Vikram; Pepper, Michael

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  11. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  12. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  13. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect (OSTI)

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  14. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  15. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  16. Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A.; Geib, Kent M.; Briggs, Ronald D.; Beechem, Thomas E.; Shaffer, Ryan A.; Clevenger, Jascinda; Patrizi, Gary A.; Klem, John F.; et al

    2016-04-21

    Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less

  17. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  18. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect (OSTI)

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  19. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    Patent: Reactive codoping of GaAlInP compound semiconductors Citation Details In-Document Search Title: Reactive codoping of GaAlInP compound semiconductors A GaAlInP compound ...

  20. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN...

    Office of Scientific and Technical Information (OSTI)

    M.T.T., 60 (6) (2012) 3 Jon Ihlefeld, Sandia National Laboratories Electronic Materials ... Undoped GaN Undoped AlGaN Doped AlGaN 2D Electron Gas Enhancement Mode (nominally ...

  1. General Atomics (GA) Fusion News: A New Spin on Understanding Plasma

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Confinement | Princeton Plasma Physics Lab General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement

  2. U.S. Virgin Islands Infographic | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Infographic U.S. Virgin Islands Infographic U.S. Virgin Islands Infographic This infographic highlights progress the U.S. Virgin islands has made toward meeting its goal of a 60% reduction in fossil fuel use by 2025. Click on the link below to download a full-resolution version. Download the USVI Infographic. (10.92 MB) More Documents & Publications Almost 1,500 solar water heating and PV systems have popped up throughout the territory since the EDIN-USVI project launched in February 2010,

  3. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect (OSTI)

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  4. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  5. Distributed Wind Case Study: Cross Island Farms, Wellesley Island, New York (Fact Sheet), NREL (National Renewable Energy Laboratory)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Distributed Wind Case Study: Cross Island Farms, Wellesley Island, New York www.nrel.gov Baker and Belding installed a 10-kW Bergey Excel wind turbine in August 2011. Photo from Cross Island Farms, NREL/PIX 19923 Funding Summary * Total cost of wind turbine, including first developer: $82,000 * Total cost of wind turbine, excluding first developer: $73,000 * Total cost of solar: $40,000 * Propane generator: $8,000; including equipment, installation, and propane: $13,000 * USDA REAP grant:

  6. A Presidential Proclamation - Asian American and Pacific Islander...

    Office of Environmental Management (EM)

    ... I call upon all Americans to visit www.WhiteHouse.govAAPI andwww.AsianPacificHeritage.gov to learn more about the history of Asian Americans and Pacific Islanders, and to observe ...

  7. American Samoa's Rebate Program Brings ENERGY STAR to Island

    Office of Energy Efficiency and Renewable Energy (EERE)

    Thanks to a grant through the American Recovery and Reinvestment Act, residents of American Samoa are able for the first time to purchase ENERGY STAR air conditioners – and for 30 percent off - through the Island's first appliance rebate program.

  8. U.S. Virgin Islands Infographic | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ...em> U.S. Virgin Islands Clears the Way for Unprecedented Levels of Solar Energy USVI Energy Road Map: Charting the Course to a Clean Energy Future (Brochure), EDIN (Energy ...

  9. Rhode Island to Build First Offshore Wind Farm

    Broader source: Energy.gov [DOE]

    Block Island, a small town with only 1,000 full-time, residents, is the site for a big project, when it will become home to Rhode Island’s first offshore wind farm.

  10. Eigenmodes of quasi-static magnetic islands in current sheet

    SciTech Connect (OSTI)

    Li Yi; Cai Xiaohui; Chai Lihui; Wang Shui; Zheng Huinan; Shen Chao

    2011-12-15

    As observation have shown, magnetic islands often appear before and/or after the onset of magnetic reconnections in the current sheets, and they also appear in the current sheets in the solar corona, Earth's magnetotail, and Earth's magnetopause. Thus, the existence of magnetic islands can affect the initial conditions in magnetic reconnection. In this paper, we propose a model of quasi-static magnetic island eigenmodes in the current sheet. This model analytically describes the magnetic field structures in the quasi-static case, which will provide a possible approach to reconstructing the magnetic structures in the current sheet via observation data. This model is self-consistent in the kinetic theory. Also, the distribution function of charged particles in the magnetic island can be calculated.

  11. PSEG Long Island- Commercial Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    PSEG Long Island offers a variety of incentives for its non-residential customers to increase the energy efficiency of facilities through the Commercial Efficiency Program. Major renovations of...

  12. Dacite Melt at the Puna Geothermal Venture Wellfield, Big Island...

    Open Energy Info (EERE)

    (PGV) well field, on the island of Hawaii, a 75-meter interval of diorite containing brown glass inclusions was penetrated at a depth of 2415 m. At a depth of 2488 m a melt of...

  13. Rhode Island Schools Teach Energy Essentials | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    December 10, 2015 - 11:24am Addthis Students participating in the NEED Project at Scituate ... Photo Courtesy | Rhode Island Public Schools Students participating in the NEED Project at ...

  14. A Miocene Island-Arc Volcanic Seamount- The Takashibiyama Formation...

    Open Energy Info (EERE)

    Island-Arc Volcanic Seamount- The Takashibiyama Formation, Shimane Peninsula, Sw Japan Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article: A Miocene...

  15. Town of Babylon- Long Island Green Homes Program

    Broader source: Energy.gov [DOE]

    The Long Island Green Homes Program is a self-financing residential retrofit program designed to support a goal of upgrading the energy efficiency of existing homes in the Town of Babylon. The...

  16. Blue Island, Illinois: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Blue Island is a city in Cook County, Illinois. It falls under Illinois' 1st congressional...

  17. Asian American and Pacific Islander Heritage Month Program

    Broader source: Energy.gov [DOE]

    Asian Pacific American Heritage Month is a celebration of the culture, traditions, and history of Asian Americans and Pacific Islanders in the United States. Join the Energy Department for the...

  18. Closing Event- Asian American and Pacific Islander Heritage Month

    Broader source: Energy.gov [DOE]

    Invited speakers from Congress, the federal government, and DOE will speak about Asian American and Pacific Islander programs and policy at the Department, and their contributions to the DOE...

  19. Quantitative analysis of forest island pattern in selected Ohio landscapes

    SciTech Connect (OSTI)

    Bowen, G.W.; Burgess, R.L.

    1981-07-01

    The purpose of this study was to quantitatively describe the various aspects of regional distribution patterns of forest islands and relate those patterns to other landscape features. Several maps showing the forest cover of various counties in Ohio were selected as representative examples of forest patterns to be quantified. Ten thousand hectare study areas (landscapes) were delineated on each map. A total of 15 landscapes representing a wide variety of forest island patterns was chosen. Data were converted into a series of continuous variables which contained information pertinent to the sizes, shape, numbers, and spacing of woodlots within a landscape. The continuous variables were used in a factor analysis to describe the variation among landscapes in terms of forest island pattern. The results showed that forest island patterns are related to topography and other environmental features correlated with topography.

  20. PSEG Long Island- Solar Initiative Feed-in Tariff

    Office of Energy Efficiency and Renewable Energy (EERE)

    The PSEG Long Island Feed-in Tariff II (FIT II) program provides fixed payments for electricity produced by approved photovoltaic systems over a fixed period of time. The program operates under a...

  1. DWEA Webinar: Wind-Diesel and Islanded Grids

    Broader source: Energy.gov [DOE]

    DWEA is launching a monthly webinar program to discuss new developments in the industry. During the first webinar, experts will provide information on wind systems in the emerging market of island...

  2. PSEG Long Island- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    PSEG Long Island offers a variety of incentives which help residential customers upgrade to more energy efficient equipment and appliances in their homes. Incentives are available for home energy...

  3. Renewable Energy and Inter-Island Power Transmission (Presentation)

    SciTech Connect (OSTI)

    Gevorgian, V.

    2011-05-01

    This presentation summarizes recent findings pertaining to inter-island connection of renewable and other energy sources, in particular, as these findings relate cable options, routing, specifications, and pros and cons.

  4. MIE Regional Climate Change Impact Webinar Series: Hawaii & Pacific Islands

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy's (DOE's) Minorities in Energy Initiative is hosting a webinar on Hawaii and Pacific Islands impacts of climate change on minority and tribal communities featuring...

  5. MIE Regional Climate Change Impact: Hawaii & Pacific Islands

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy's (DOE's) Minorities in Energy Initiative is hosting a webinar on Hawaii and Pacific Islands impacts of climate change on minority and tribal communities featuring presentations by nationally recognized policymakers, researchers, and educators.

  6. White Island Shores, Massachusetts: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. White Island Shores is a census-designated place in Plymouth County, Massachusetts.1...

  7. Northern Mariana Islands: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Name Northern Mariana Islands 2-letter ISO code MP 3-letter ISO code MNP Numeric ISO code 580 Equivalent URI DBpedia GeoNames ID 4041468 Advanced Economy1 No References CIA World...

  8. FUPWG Meeting Agenda - Jekyll Island, Georgia | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    FUPWG Meeting Agenda - Jekyll Island, Georgia Logo for the FUPWG Spring 2012 meeting showing a crane, a lake, and wind turbines. The logo reads: Preserving our future with energy ...

  9. Energy Design Guidelines for High Performance Schools: Tropical Island Climates

    SciTech Connect (OSTI)

    2004-11-01

    Design guidelines outline high performance principles for the new or retrofit design of K-12 schools in tropical island climates. By incorporating energy improvements into construction or renovation plans, schools can reduce energy consumption and costs.

  10. Fisher Island, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Fisher Island is a census-designated place in Miami-Dade County, Florida.1 References ...

  11. Visual Modeling for Aqua Ventus I off Monhegan Island, ME

    SciTech Connect (OSTI)

    Hanna, Luke A.; Whiting, Jonathan M.; Copping, Andrea E.

    2013-11-27

    To assist the University of Maine in demonstrating a clear pathway to project completion, PNNL has developed visualization models of the Aqua Ventus I project that accurately depict the Aqua Ventus I turbines from various points on Monhegain Island, ME and the surrounding area. With a hub height of 100 meters, the Aqua Ventus I turbines are large and may be seen from many areas on Monhegan Island, potentially disrupting important viewsheds. By developing these visualization models, which consist of actual photographs taken from Monhegan Island and the surrounding area with the Aqua Ventus I turbines superimposed within each photograph, PNNL intends to support the project’s siting and permitting process by providing the Monhegan Island community and various other stakeholders with a probable glimpse of how the Aqua Ventus I project will appear.

  12. Energy Transition Initiative: Island Energy Snapshot - Dominica (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2015-03-01

    This profile provides a snapshot of the energy landscape of the Commonwealth of Dominica, an island nation located southeast of Guadeloupe and northwest of Martinique in the Lesser Antilles.

  13. Mercer Island, Washington: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    This article is a stub. You can help OpenEI by expanding it. Mercer Island is a city in King County, Washington. It falls under Washington's 8th congressional district.12...

  14. Northern Mariana Islands: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Northern Mariana Islands Population 53,833 GDP Unavailable Energy Consumption Quadrillion Btu 2-letter ISO code MP 3-letter ISO code MNP Numeric ISO code...

  15. Turks and Caicos Islands: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Turks and Caicos Islands Population 31,458 GDP Unavailable Energy Consumption 0.00 Quadrillion Btu 2-letter ISO code TC 3-letter ISO code TCA Numeric ISO...

  16. Bell Island Pool & Spa Low Temperature Geothermal Facility |...

    Open Energy Info (EERE)

    ":"","inlineLabel":"","visitedicon":"" Hide Map Temperature 72.0 C 162.0 F Flow No Data Listed References Oregon Institute of Technology's Geo-Heat Center1 Bell Island is...

  17. DOE - Office of Legacy Management -- Rock Island Arsenal - IL...

    Office of Legacy Management (LM)

    to DOD Designated Name: Not Designated Alternate Name: None Location: Rock Island , Illinois IL.09-1 Evaluation Year: 1987 IL.09-2 Site Operations: Site located on a DOD ...

  18. Rhode Island Total Electric Power Industry Net Generation, by...

    U.S. Energy Information Administration (EIA) Indexed Site

    Rhode Island" "Energy Source",2006,2007,2008,2009,2010 "Fossil",5813,6891,7224,7547,7595 " Coal","-","-","-","-","-" " Petroleum",33,34,26,17,12 " Natural Gas",5780,6857,7198,7530,...

  19. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    SciTech Connect (OSTI)

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang E-mail: mssgzhang@scut.edu.cn; Li, Guoqiang E-mail: mssgzhang@scut.edu.cn

    2014-11-21

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In{sub x}Ga{sub 1−x}As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In{sub x}Ga{sub 1−x}As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In{sub x}Ga{sub 1−x}As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In{sub x}Ga{sub 1−x}As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In{sub x}Ga{sub 1−x}As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In{sub x}Ga{sub 1−x}As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

  20. New Zealand and southwest Pacific islands

    SciTech Connect (OSTI)

    Katz, H.R.

    1981-10-01

    In New Zealand, new incentives by the government have greatly stimulated interest in exploration. On land, four wells were completed during 1980 at a total depth of 10,120 m. One well was a commercial oil and gas discovery. Offshore, the first exploratory well since 1978 was spudded shortly before the end of 1980. Offshore concession areas have increased over ten-fold, to 107,044 km/sup 2/; on-land licenses, which are all owned by the government company Petrocorp, decreased to 11,591 km/sup 2/. During 1980, the combined output of Kapuni and Maui gas was 1,069,049 x 10/sup 6/m/sup 3/, a decrease of 18.23%. This reflects the new gas-recycling operation at the Kapuni field, which started in April. Combined condensate production was down only 12.15%, amounting to 418,941 m/sup 3/. Natural gasoline was down 17.44%, to 7093 m/sup 3/, whereas LPG production went up 39.44%, to 27,301 m/sup 3/. In Tonga, 925 km of offshore multichannel seismic, gravity, and magnetic surveys run in 1979 have been processed and interpreted. In Fiji, the first two exploratory wells ever drilled were dry. In Vanuatu, the newly independent republic of the former New Hebrides Condominium, no petroleum legislation has so far been introduced. CCOP/SOPAC and ORSTOM jointly ran a 4000-km single-channel reflection seismic survey between the northern islands. Several sedimentary basins with over 2500 m of slightly deformed sediments of Miocene-Pliocene age have been delineated. In the Solomon Islands, there is still no petroleum legislation, but the draft of the Petroleum (Exploration and Development) Act has been completed and will go before Parliament during 1981. In Papua New Guinea, one well was drilled to 3027 m and abandoned as dry. It confirmed the regional stratigraphic interpretation and had encouraging hydrocarbon indications in the Mesozoic part of the sequence. 6 figures, 5 tables.

  1. Aleutian Pribilof Islands Wind Energy Feasibility Study

    SciTech Connect (OSTI)

    Bruce A. Wright

    2012-03-27

    Under this project, the Aleutian Pribilof Islands Association (APIA) conducted wind feasibility studies for Adak, False Pass, Nikolski, Sand Point and St. George. The DOE funds were also be used to continue APIA's role as project coordinator, to expand the communication network quality between all participants and with other wind interest groups in the state and to provide continued education and training opportunities for regional participants. This DOE project began 09/01/2005. We completed the economic and technical feasibility studies for Adak. These were funded by the Alaska Energy Authority. Both wind and hydro appear to be viable renewable energy options for Adak. In False Pass the wind resource is generally good but the site has high turbulence. This would require special care with turbine selection and operations. False Pass may be more suitable for a tidal project. APIA is funded to complete a False Pass tidal feasibility study in 2012. Nikolski has superb potential for wind power development with Class 7 wind power density, moderate wind shear, bi-directional winds and low turbulence. APIA secured nearly $1M from the United States Department of Agriculture Rural Utilities Service Assistance to Rural Communities with Extremely High Energy Costs to install a 65kW wind turbine. The measured average power density and wind speed at Sand Point measured at 20m (66ft), are 424 W/m2 and 6.7 m/s (14.9 mph) respectively. Two 500kW Vestas turbines were installed and when fully integrated in 2012 are expected to provide a cost effective and clean source of electricity, reduce overall diesel fuel consumption estimated at 130,000 gallons/year and decrease air emissions associated with the consumption of diesel fuel. St. George Island has a Class 7 wind resource, which is superior for wind power development. The current strategy, led by Alaska Energy Authority, is to upgrade the St. George electrical distribution system and power plant. Avian studies in Nikolski and

  2. Amchitka Island, Alaska, Biological Monitoring Report 2011 Sampling Results

    SciTech Connect (OSTI)

    2013-09-01

    The Long-Term Surveillance and Maintenance (LTS&M) Plan for the U.S. Department of Energy (DOE) Office of Legacy Management (LM) Amchitka Island sites describes how LM plans to conduct its mission to protect human health and the environment at the three nuclear test sites located on Amchitka Island, Alaska. Amchitka Island, near the western end of the Aleutian Islands, is approximately 1,340 miles west-southwest of Anchorage, Alaska. Amchitka is part of the Aleutian Island Unit of the Alaska Maritime National Wildlife Refuge, which is administered by the U.S. Fish and Wildlife Service (USFWS). Since World War II, Amchitka has been used by multiple U.S. government agencies for various military and research activities. From 1943 to 1950, it was used as a forward air base for the U.S. Armed Forces. During the middle 1960s and early 1970s, the U.S. Department of Defense (DOD) and the U.S. Atomic Energy Commission (AEC) used a portion of the island as a site for underground nuclear tests. During the late 1980s and early 1990s, the U.S. Navy constructed and operated a radar station on the island. Three underground nuclear tests were conducted on Amchitka Island. DOD, in conjunction with AEC, conducted the first nuclear test (named Long Shot) in 1965 to provide data that would improve the United States' capability of detecting underground nuclear explosions. The second nuclear test (Milrow) was a weapons-related test conducted by AEC in 1969 as a means to study the feasibility of detonating a much larger device. Cannikin, the third nuclear test on Amchitka, was a weapons-related test detonated on November 6, 1971. With the exception of small concentrations of tritium detected in surface water shortly after the Long Shot test, radioactive fission products from the tests remain in the subsurface at each test location As a continuation of the environmental monitoring that has taken place on Amchitka Island since before 1965, LM in the summer of 2011 collected biological and

  3. The Long Island Solar Farm | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    In November 2011, a utility-scale solar array became operational in the most unlikely of places: at Brookhaven National Laboratory on densely populated Long Island, New York. Now the largest utility-scale solar power plant in the eastern United States, the Long Island Solar Farm is a remarkable success story whereby very different interest groups capitalized on unusual circumstances to develop a mutually beneficial source of renewable energy. Location Brookhaven National Laboratory 2 Center St

  4. Asian American and Pacific Islander Heritage Women @ Energy | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Asian American and Pacific Islander Heritage Women @ Energy Asian American and Pacific Islander Heritage Women @ Energy May 3, 2013 - 11:49am Addthis Xin Sun 1 of 12 Xin Sun Creativity, insight, and application are the hallmarks of Dr. Xin Sun's applied mechanics and computational materials research at Pacific Northwest National Laboratory. Her advances in lightweight and high-strength materials (including steels) and modeling are vital to energy efficiency and renewable energy and

  5. Macquarie Island Cloud and Radiation Experiment (MICRE) Science Plan

    Office of Scientific and Technical Information (OSTI)

    (Program Document) | SciTech Connect Macquarie Island Cloud and Radiation Experiment (MICRE) Science Plan Citation Details In-Document Search Title: Macquarie Island Cloud and Radiation Experiment (MICRE) Science Plan Clouds over the Southern Ocean are poorly represented in present day reanalysis products and global climate model simulations. Errors in top-of-atmosphere (TOA) broadband radiative fluxes in this region are among the largest globally, with large implications for modeling both

  6. Tribal Weatherization Training in the Aleutian and Pribilof Islands

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Tribal Weatherization Training In the Aleutian and Pribilof Islands Tribal Energy Program Review October 28, 2010 By Bruce Wright Senior Scientist Aleutian Pribilof Islands Association The Tribes & Project Overview: This project entails on-site weatherization, energy conservation education and a home energy and safety review in the communities of Akutan, Atka, False Pass, King Cove, Nelson Lagoon, Nikolski, Sand Point, St. George, St. Paul and Unalaska, and in support of 13 Tribes in the

  7. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  8. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  9. High Voltage GaN Schottky Rectifiers

    SciTech Connect (OSTI)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  10. Making it pay in Athens, GA

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  11. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect (OSTI)

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  12. An updated dose assessment for Rongelap Island

    SciTech Connect (OSTI)

    Robison, W.L.; Conrado, C.L.; Bogen, K.T.

    1994-07-01

    We have updated the radiological dose assessment for Rongelap Island at Rongelap Atoll using data generated from field trips to the atoll during 1986 through 1993. The data base used for this dose assessment is ten fold greater than that available for the 1982 assessment. Details of each data base are presented along with details about the methods used to calculate the dose from each exposure pathway. The doses are calculated for a resettlement date of January 1, 1995. The maximum annual effective dose is 0.26 mSv y{sup {minus}1} (26 mrem y{sup {minus}1}). The estimated 30-, 50-, and 70-y integral effective doses are 0.0059 Sv (0.59 rem), 0.0082 Sv (0.82 rem), and 0.0097 Sv (0.97 rem), respectively. More than 95% of these estimated doses are due to 137-Cesium ({sup 137}Cs). About 1.5% of the estimated dose is contributed by 90-Strontium ({sup 90}Sr), and about the same amount each by 239+240-Plutonium ({sup 239+240}PU), and 241-Americium ({sup 241}Am).

  13. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  14. Modeling the conversion of hydroacoustic to seismic energy at island and continental margins: preliminary analysis of Ascension Island data

    SciTech Connect (OSTI)

    Harben, P.; Rodgers, A.

    1999-07-26

    Seismic stations at islands and continental margins will be an essential component of the International Monitoring System (IMS) for event location and identification in support of Comprehensive Nuclear-Test-Ban Treaty (CTBT) monitoring. Particularly important will be the detection and analysis of hydroacoustic-to-seismic converted waves (T-phases) at island or continental margins. Acoustic waves generated by sources in or near the ocean propagate for long distances very efficiently due to the ocean sound speed channel (SOFAR) and low attenuation. When ocean propagating acoustic waves strike an island or continental margin they are converted to seismic (elastic) waves. We are using a finite difference code to model the conversion of hydroacoustic T-waves at an island or continental margin. Although ray-based methods are far more efficient for modeling long-range (> 1000 km) high-frequency hydroacoustic propagation, the finite difference method has the advantage of being able to model both acoustic and elastic wave propagation for a broad range of frequencies. The method allows us to perform simulations of T-phases to relatively high frequencies ({>=}10 Hz). Of particular interest is to identify factors that affect the efficiency of T-phase conversion, such as the topographic slope and roughness at the conversion point and elastic velocity structure within the island or continent. Previous studies have shown that efficient T-phase conversion occurs when the topographic slope at the conversion point is steep (Cansi and Bethoux, 1985; Talandier and Okal, 1998). Another factor impacting T-phase conversion may be the near-shore structure of the sound channel. It is well known that the depth to the sound channel axis decreases in shallow waters. This can weaken the channeled hydroacoustic wave. Elastic velocity structure within the island or continent will impact how the converted seismic wave is refracted to recording stations at the surface and thus impact the T

  15. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  16. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect (OSTI)

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  17. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  18. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  19. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  20. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  1. High Quantum Efficiency AlGaN/InGaN Photodetectors

    SciTech Connect (OSTI)

    Buckley, James H; Leopold, Daniel

    2009-11-24

    High efficiency photon counting detectors in use today for high energy particle detection applications have a significant spectral mismatch with typical sources and have a number of practical problems compared with conventional bialkali photomultiplier tubes. Numerous high energy physics experiments that employ scintillation light detectors or Cherenkov detectors would benefit greatly from photomultipliers with higher quantum efficiencies. The need for extending the sensitivity of photon detectors to the blue and UV wavebands comes from the fact that both Cherenkov light and some scintillators have an emission spectrum which is peaked at short wavelengths. This research involves the development of high quantum efficiency, high gain, UV/blue photon counting detectors based on AlGaN/InGaN photocathode heterostructures grown by molecular beam epitaxy (MBE). The work could eventually lead to nearly ideal light detectors with a number of distinct advantages over existing technologies for numerous applications in high-energy physics and particle astrophysics. Potential advantages include much lower noise detection, better stability and radiation resistance than other cathode structures, very low radioactive background levels for deep underground experiments and high detection efficiency of individual UV-visible photons. We are also working on the development of photocathodes with intrinsic gain, initially improving the detection efficiency of hybrid semiconductor-vacuum tube devices, and eventually leading to an all-solid-state photomultiplier device.

  2. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect (OSTI)

    Lin, Chien-Hung Lee, Chien-Ping

    2014-10-21

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

  3. In-plane electric fields in magnetic islands during collisionless magnetic reconnection

    SciTech Connect (OSTI)

    Chen Lijen; Bhattacharjee, Amitava; Torbert, Roy B.; Bessho, Naoki; Daughton, William; Roytershteyn, Vadim

    2012-11-15

    Magnetic islands are a common feature in both the onset and nonlinear evolution of magnetic reconnection. In collisionless regimes, the onset typically occurs within ion-scale current layers leading to the formation of magnetic islands when multiple X lines are involved. The nonlinear evolution of reconnection often gives rise to extended electron current layers (ECL) which are also unstable to formation of magnetic islands. Here, we show that the excess negative charge and strong out-of-plane electron velocity in the ECL are passed on to the islands generated therein, and that the corresponding observable distinguishing the islands generated in the ECL is the strongly enhanced in-plane electric fields near the island core. The islands formed in ion-scale current layers do not have these properties of the ECL-generated islands. The above result provides a way to assess the occurrence and importance of extended ECLs that are unstable to island formation in space and laboratory plasmas.

  4. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Lee, Ching-Sung; Lour, Wen-Shiung; Ma, Yung-Chun; Ye, Sheng-Shiun

    2011-05-15

    Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

  5. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect (OSTI)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  6. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect (OSTI)

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??GaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  7. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  8. Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

    SciTech Connect (OSTI)

    Feng, Shih-Wei Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

    2015-07-28

    Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

  9. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  10. NREL: Technology Deployment - U.S. Virgin Islands Cut Diesel Use for

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electricity and Water Production by 20% U.S. Virgin Islands Cut Diesel Use for Electricity and Water Production by 20% News NREL Helping Virgin Islands Cut Fuel Use U.S. Virgin Islands Begins Collecting Wind Resource Data: A Wind Powering America Success Story NREL Helps U.S. Virgin Islands Install Wind Testing Equipment U.S. Virgin Islands Makes Aggressive Energy Pledge at NREL Publications USVI Energy Road Map: Charting the Course to a Clean Energy Future U.S. Virgin Islands Energy Road

  11. Energy Transformation in the U.S. Virgin Islands | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transformation in the U.S. Virgin Islands Energy Transformation in the U.S. Virgin Islands Click on the graphic to learn more the USVI's progress toward its 60% by 2025 goal. Click on the graphic to learn more the USVI's progress toward its 60% by 2025 goal. Location U.S. Virgin Islands Partners National Renewable Energy Laboratory Virgin Islands Water and Power Authority Virgin Islands Energy Office The U.S. Virgin Islands (USVI) worked with the U.S. Department of Energy (DOE) from 2009 to 2013

  12. A Robust Load Shedding Strategy for Microgrid Islanding Transition

    SciTech Connect (OSTI)

    Liu, Guodong; Xiao, Bailu; Starke, Michael R; Ceylan, Oguzhan; Tomsovic, Kevin

    2016-01-01

    A microgrid is a group of interconnected loads and distributed energy resources. It can operate in either gridconnected mode to exchange energy with the main grid or run autonomously as an island in emergency mode. However, the transition of microgrid from grid-connected mode to islanded mode is usually associated with excessive load (or generation), which should be shed (or spilled). Under this condition, this paper proposes an robust load shedding strategy for microgrid islanding transition, which takes into account the uncertainties of renewable generation in the microgrid and guarantees the balance between load and generation after islanding. A robust optimization model is formulated to minimize the total operation cost, including fuel cost and penalty for load shedding. The proposed robust load shedding strategy works as a backup plan and updates at a prescribed interval. It assures a feasible operating point after islanding given the uncertainty of renewable generation. The proposed algorithm is demonstrated on a simulated microgrid consisting of a wind turbine, a PV panel, a battery, two distributed generators (DGs), a critical load and a interruptible load. Numerical simulation results validate the proposed algorithm.

  13. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  14. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  15. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  16. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  17. Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

    SciTech Connect (OSTI)

    Pozina, Galia; Ciechonski, Rafal; Bi, Zhaoxia; Samuelson, Lars; Monemar, Bo

    2015-12-21

    Today's energy saving solutions for general illumination rely on efficient white light emitting diodes (LEDs). However, the output efficiency droop experienced in InGaN based LEDs with increasing current injection is a serious limitation factor for future development of bright white LEDs. We show using cathodoluminescence (CL) spatial mapping at different electron beam currents that threading dislocations are active as nonradiative recombination centers only at high injection conditions. At low current, the dislocations are inactive in carrier recombination due to local potentials, but these potentials are screened by carriers at higher injection levels. In CL images, this corresponds to the increase of the dark contrast around dislocations with the injection (excitation) density and can be linked with droop related to the threading dislocations. Our data indicate that reduction of droop in the future efficient white LED can be achieved via a drastic reduction of the dislocation density by using, for example, bulk native substrates.

  18. Radiation resistance of GaAs-GaAlAs vertical cavity surface emitting lasers

    SciTech Connect (OSTI)

    Jabbour, J.; Zazoui, M.; Sun, G.C.; Bourgoin, J.C.; Gilard, O.

    2005-02-15

    The variations of the optical and electrical characteristics of a vertical cavity surface emitting laser based on GaAs quantum wells have been monitored versus irradiation with 1 MeV electrons. The results are understood by the introduction of nonradiative recombination centers in the wells whose characteristics, capture cross section for minority carriers times their introduction rate, can be determined. A similar study performed for proton irradiation shows that the results can be explained in the same way when the introduction rate of the defects is replaced by the proton energy loss into atomic collisions. These results allow us to deduce the equivalence between electron and proton irradiations: A flux of 1 proton cm{sup -2} which loses an energy E{sub nl} (eV) into atomic collisions is equivalent to a fluence of about 9x10{sup -2} E{sub nl} cm{sup -2}, 1 MeV electrons.

  19. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  20. Undersea line planned to transmit to an island

    SciTech Connect (OSTI)

    Not Available

    1993-08-09

    The electric utility serving Nantucket Island in Massachusetts, which until now has generated its own power, plans to lay 25 miles of transmission cable to connect with New England's mainland grid. The line will allow the utility to purchase less costly power and retire several old generators, improving both reliability and air quality on the island. Nantucket Electric Co. says the 33-Mw submarine link, costing at least $23 million, probably will connect with a line near the elbow on Cape Cod. The undersea cable will be as deep as 60 ft. Nantucket Electric plans to form a partnership within a few months with a mainland utility or private producer that would help finance the project and sell the power. The island utility has preliminary approval by the state Industrial Finance Agency for a tax-exempt bond issue to finance the cable, contingent on its finding a partner.

  1. AmeriFlux US-Snd Sherman Island

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Baldocchi, Dennis [University of California, Berkeley

    2016-01-01

    This is the AmeriFlux version of the carbon flux data for the site US-Snd Sherman Island. Site Description - The Sherman Island site is a 38-ha peatland pasture, west of the Delta, that is owned by the state and managed by the California Department of Water Resources. The site is degraded and heavily grazed with ~100 cattle in the area that circumscribes the main field and fetch. The island has been drained and farmed since the late 1800s. The soils of the Delta overlay deep peat that was sequestered over the Holocene period as sea-level rose and flooding of archaic wetlands prevented decomposition of roots and stems. Hence, the upper 10 m of peatland has been lost to decomposition, compaction, and subsidence. Today a mineral soil overlays a peat layer, which coincides with the general depth of the water table.

  2. Remedial Action Work Plan Amchitka Island Mud Pit Closures

    SciTech Connect (OSTI)

    DOE/NV

    2001-04-05

    This remedial action work plan presents the project organization and construction procedures developed for the performance of the remedial actions at U.S. Department of Energy (DOE's) sites on Amchitka Island, Alaska. During the late1960s and early 1970s, the U.S. Department of Defense and the U.S. Atomic Energy Commission (the predecessor agency to DOE) used Amchitka Island as a site for underground nuclear tests. A total of nine sites on the Island were considered for nuclear testing; however, tests were only conducted at three sites (i.e., Long Shot in 1965, Milrow in 1969, and Cannikin in 1971). In addition to these three sites, large diameter emplacement holes were drilled in two other locations (Sites D and F) and an exploratory hole was in a third location (Site E). It was estimated that approximately 195 acres were disturbed by drilling or preparation for drilling in conjunction with these activities. The disturbed areas include access roads, spoil-disposal areas, mud pits which have impacted the environment, and an underground storage tank at the hot mix plant which was used to support asphalt-paving operations on the island. The remedial action objective for Amchitka Island is to eliminate human and ecological exposure to contaminants by capping drilling mud pits, removing the tank contents, and closing the tank in place. The remedial actions will meet State of Alaska regulations, U.S. Fish and Wildlife Service refuge management goals, address stakeholder concerns, and address the cultural beliefs and practices of the native people. The U.S. Department of Energy, Nevada Operations Office will conduct work on Amchitka Island under the authority of the Comprehensive Emergency Response, Compensation, and Liability Act. Field activities are scheduled to take place May through September 2001. The results of these activities will be presented in a subsequent Closure Report.

  3. Vertical zone melt growth of GaAs

    SciTech Connect (OSTI)

    Henry, R.L.; Nordquist, P.E.R.; Gorman, R.J.

    1993-12-31

    A Vertical Zone Melt (VZM) technique has been applied to the single crystal growth of GaAs. A pyrolytic boron nitride crucible and a (100) oriented seed were used along with liquid encapsulation by boric oxide. In the case of GaAs, the ampoule was pressurized with either argon or argensic vapor from elemental arsenic at pressures ranging from 1 to 2 atmospheres. A molten zone length of 22 mm gave a growth interface which is nearly flat and resulted in routine single crystal growth. Temperature gradients of 4{degrees}C/cm. and 9{degrees}C/cm. have produced dislocation densities of <1000/cm{sup 2} and 2000-5000/cm{sup 2} respectively for 34 mm diameter crystals of GaAs. Post growth cooling rates for GaAs have been 35, 160 and 500{degrees}C/hr. The cooling rate has been found to affect the number and size of arsenic precipitates and the EL2 concentration in the GaAs crystal. The effects of these and other growth parameters on the crystalline perfection and electrical properties of the crystals will be discussed.

  4. The Long Island Solar Farm | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    This technical report provides an in-depth look at the one SunShot Initiative success story, the Long Island Solar Farm project, which is a utility-scale solar array located at Brookhaven National Laboratory in Eastern Long Island, New York. Three aspects of this project make it remarkable: first, it is the largest utility-scale solar power plant in the Eastern United States; second, it is a commercial project built on federally administered public lands; and third, the project was very unlikely

  5. Waste-to-Energy Evaluation: U.S. Virgin Islands

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Waste-to-Energy Evaluation: U.S. Virgin Islands Jerry Davis, Scott Haase, and Adam Warren Technical Report NREL/TP-7A20-52308 August 2011 NREL is a national laboratory of the U.S. Department of Energy, Office of Energy Efficiency & Renewable Energy, operated by the Alliance for Sustainable Energy, LLC. National Renewable Energy Laboratory 1617 Cole Boulevard Golden, Colorado 80401 303-275-3000 * www.nrel.gov Contract No. DE-AC36-08GO28308 Waste-to-Energy Evaluation: U.S. Virgin Islands Jerry

  6. ARM - PI Product - Cloud Property Retrieval Products for Graciosa Island,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Azores ProductsCloud Property Retrieval Products for Graciosa Island, Azores ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send PI Product : Cloud Property Retrieval Products for Graciosa Island, Azores [ research data - ASR funded ] The motivation for developing this product was to use the Dong et al. 1998 method to retrieve cloud microphysical properties, such as cloud droplet effective radius, cloud droplets

  7. Energy Department Helps Advance Island Clean Energy Goals (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-10-01

    This U.S. Department of Energy (DOE) Office of Energy Efficiency and Renewable Energy (EERE) fact sheet highlights a June 2012 solar power purchase agreement between the Virgin Islands Water and Power Authority and three corporations. The fact sheet describes how financial support from DOE and technical assistance from DOE's National Renewable Energy Laboratory enabled the U.S. Virgin Islands to realistically assess its clean energy resources and identify the most viable and cost-effective solutions to its energy challenges--resulting in a $65 million investment in solar energy in the territory.

  8. ARM - Field Campaign - Macquarie Island Cloud and Radiation Experiment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (MICRE) govCampaignsMacquarie Island Cloud and Radiation Experiment (MICRE) Campaign Links Science Plan Backgrounder Baseline Instruments and Data Plots Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Macquarie Island Cloud and Radiation Experiment (MICRE) 2016.03.01 - 2018.03.31 Lead Scientist : Roger Marchand Abstract Clouds over the Southern Ocean are poorly represented in present day reanalysis products and global climate model

  9. Scaling of Sweet-Parker reconnection with secondary islands

    SciTech Connect (OSTI)

    Cassak, P. A.; Shay, M. A.; Drake, J. F.

    2009-12-15

    Sweet-Parker (collisional) magnetic reconnection at high Lundquist number is modified by secondary islands. Daughton et al. [Phys. Rev. Lett. 103, 065004 (2009)] suggested the Sweet-Parker model governs the fragmented current sheet segments. If true, the reconnection rate would increase by the square root of the number of secondary islands. High Lundquist number resistive magnetohydrodynamic simulations are presented which agree, in a time-averaged sense, with the predicted scaling. This result may have important implications for energy storage before a solar eruption and its subsequent release.

  10. DOE - Office of Legacy Management -- Staten Island Warehouse - NY 22

    Office of Legacy Management (LM)

    Staten Island Warehouse - NY 22 FUSRAP Considered Sites Staten Island Warehouse, NY Alternate Name(s): Archer-Daniels Midland Company NY.22-3 Location: 2393 Richmond Terrace, Port Richmond, New York NY.22-2 Historical Operations: Stored pitchblende (high-grade uranium ore), which was purchased by the MED for the first atomic bomb. NY.22-3 Eligibility Determination: Eligible Radiological Survey(s): Assessment Survey NY.22-5 Site Status: Referred by DOE, evaluation in progess by U.S. Army Corps of

  11. Small Changes Help Long Island Homeowner Save Big on Energy Costs...

    Energy Savers [EERE]

    Changes Help Long Island Homeowner Save Big on Energy Costs Small Changes Help Long Island ... of her home while saving money on energy bills. | Photo courtesy of Deborah Wetzel. ...

  12. U.S. Coast Guard, Kodiak Island, Alaska | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    U.S. Coast Guard, Kodiak Island, Alaska October 7, 2013 - 2:01pm Addthis Photo of new boiler at Kodiak Island facility The first delivery order included upgrades to the steam...

  13. NREL: Wind Research - U.S. Virgin Islands Begins Collecting Wind...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U.S. Virgin Islands Begins Collecting Wind Resource Data: A Wind Powering America Success Story March 25, 2013 In the U.S. Virgin Islands (USVI), electricity is so expensive that ...

  14. U.S. Virgin Islands Ramping Up Clean Energy Efforts with an Eye...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    U.S. Virgin Islands Ramping Up Clean Energy Efforts with an Eye Toward a Sustainable Future U.S. Virgin Islands Ramping Up Clean Energy Efforts with an Eye Toward a Sustainable ...

  15. Energy Department Supports Clean Energy Development in the U.S. Virgin Islands

    Broader source: Energy.gov [DOE]

    The U.S. Virgin Islands (USVI) is working with the Energy Department to transition from fossil fuel energy to the renewable resources that are abundant on the islands.

  16. Energy Transition Initiative: Island Energy Snapshot - Saint Martin/Sint Maarten

    SciTech Connect (OSTI)

    2015-09-01

    This profile provides a snapshot of the energy landscape of the northeast Caribbean island Saint Martin. The island is divided between two nations, France in the north (Saint-Martin) and the Netherlands in the south (Sint Maarten).

  17. Energy Transition Initiative: Island Energy Snapshot - St. Kitts & Nevis; NREL (National Renewable Energy Laboratory)

    SciTech Connect (OSTI)

    2015-03-01

    This profile provides a snapshot of the energy landscape of the Federation of St. Christopher (St. Kitts) and Nevis - two islands located in the Leeward Islands in the West Indies.

  18. U.S. Virgin Islands Wind Resources Update 2014 (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    U.S. Virgin Islands Wind Resources Update 2014 Citation Details In-Document Search Title: U.S. Virgin Islands Wind Resources Update 2014 This report summarizes the data collected...

  19. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of

  20. Energy Transition Initiative, Island Energy Snapshot - Jamaica; NREL (National Renewable Energy Laboratory)

    SciTech Connect (OSTI)

    2015-04-06

    This profile provides a snapshot of the energy landscape of Jamaica, an island nation located in the north Caribbean Sea.

  1. DOE - Office of Legacy Management -- Amchitka Island Test Center - AK 01

    Office of Legacy Management (LM)

    Amchitka Island Test Center - AK 01 Site ID (CSD Index Number): AK.01 Site Name: Amchitka Island Test Center Site Summary: Site Link: Amchitka Island Test Center External Site Link: Alternate Name(s): Amchitka Island Test Center Alternate Name Documents: Location: Amchitka, Alaska Location Documents: Historical Operations (describe contaminants): Underground nuclear test site Historical Operations Documents: Eligibility Determination: Remediated by DOE Eligibility Determination Documents:

  2. Structural transformations in amorphous ↔ crystalline phase change of Ga-Sb alloys

    SciTech Connect (OSTI)

    Edwards, T. G.; Sen, S.; Hung, I.; Gan, Z.; Kalkan, B.; Raoux, S.

    2013-12-21

    Ga-Sb alloys with compositions ranging between ∼12 and 50 at. % Ga are promising materials for phase change random access memory applications. The short-range structures of two such alloys with compositions Ga{sub 14}Sb{sub 86} and Ga{sub 46}Sb{sub 54} are investigated, in their amorphous and crystalline states, using {sup 71}Ga and {sup 121}Sb nuclear magnetic resonance spectroscopy and synchrotron x-ray diffraction. The Ga and Sb atoms are fourfold coordinated in the as-deposited amorphous Ga{sub 46}Sb{sub 54} with nearly 40% of the constituent atoms being involved in Ga-Ga and Sb-Sb homopolar bonding. This necessitates extensive bond switching and elimination of homopolar bonds during crystallization. On the other hand, Ga and Sb atoms are all threefold coordinated in the as-deposited amorphous Ga{sub 14}Sb{sub 86}. Crystallization of this material involves phase separation of GaSb domains in Sb matrix and a concomitant increase in the Ga coordination number from 3 to 4. Results from crystallization kinetics experiments suggest that the melt-quenching results in the elimination of structural “defects” such as the homopolar bonds and threefold coordinated Ga atoms in the amorphous phases of these alloys, thereby rendering them structurally more similar to the corresponding crystalline states compared to the as-deposited amorphous phases.

  3. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Mller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jrgen; Glauser, Marlene; Carlin, Jean-Franois; Cosendey, Gatien; Butt, Raphal; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  4. Kauai Island Utility Cooperative energy storage study.

    SciTech Connect (OSTI)

    Akhil, Abbas Ali; Yamane, Mike; Murray, Aaron T.

    2009-06-01

    Sandia National Laboratories performed an assessment of the benefits of energy storage for the Kauai Island Utility Cooperative. This report documents the methodology and results of this study from a generation and production-side benefits perspective only. The KIUC energy storage study focused on the economic impact of using energy storage to shave the system peak, which reduces generator run time and consequently reduces fuel and operation and maintenance (O&M) costs. It was determined that a 16-MWh energy storage system would suit KIUC's needs, taking into account the size of the 13 individual generation units in the KIUC system and a system peak of 78 MW. The analysis shows that an energy storage system substantially reduces the run time of Units D1, D2, D3, and D5 - the four smallest and oldest diesel generators at the Port Allen generating plant. The availability of stored energy also evens the diurnal variability of the remaining generation units during the off- and on-peak periods. However, the net economic benefit is insufficient to justify a load-leveling type of energy storage system at this time. While the presence of storage helps reduce the run time of the smaller and older units, the economic dispatch changes and the largest most efficient unit in the KIUC system, the 27.5-MW steam-injected combustion turbine at Kapaia, is run for extra hours to provide the recharge energy for the storage system. The economic benefits of the storage is significantly reduced because the charging energy for the storage is derived from the same fuel source as the peak generation source it displaces. This situation would be substantially different if there were a renewable energy source available to charge the storage. Especially, if there is a wind generation resource introduced in the KIUC system, there may be a potential of capturing the load-leveling benefits as well as using the storage to dampen the dynamic instability that the wind generation could introduce into

  5. Long Island Smart Metering Pilot Project

    SciTech Connect (OSTI)

    2012-03-30

    The Long Island Power Authority (LIPA) Smart Meter Pilots provided invaluable information and experience for future deployments of Advanced Metering Infrastructure (AMI), including the deployment planned as part of LIPA’s Smart Grid Demonstration Project (DE-OE0000220). LIPA will incorporate lessons learned from this pilot in future deployments, including lessons relating to equipment performance specifications and testing, as well as equipment deployment and tracking issues. LIPA ultimately deployed three AMI technologies instead of the two that were originally contemplated. This enabled LIPA to evaluate multiple systems in field conditions with a relatively small number of meter installations. LIPA experienced a number of equipment and software issues that it did not anticipate, including issues relating to equipment integration, ability to upgrade firmware and software “over the air” (as opposed to physically interacting with every meter), and logistical challenges associated with tracking inventory and upgrade status of deployed meters. In addition to evaluating the technology, LIPA also piloted new Time-of-Use (TOU) rates to assess customer acceptance of time-differentiated pricing and to evaluate whether customers would respond by adjusting their activities from peak to non-peak periods. LIPA developed a marketing program to educate customers who received AMI in the pilot areas and to seek voluntary participation in TOU pricing. LIPA also guaranteed participating customers that, for their initial year on the rates, their electricity costs under the TOU rate would not exceed the amount they would have paid under the flat rates they would otherwise enjoy. 62 residential customers chose to participate in the TOU rates, and every one of them saved money during the first year. 61 of them also elected to stay on the TOU rate – without the cost guarantee – at the end of that year. The customer who chose not to continue on the rate was also

  6. Experimental Evaluation of PV Inverter Anti-Islanding with Grid Support Functions in Multi-Inverter Island Scenarios

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Experimental Evaluation of PV Inverter Anti-Islanding with Grid Support Functions in Multi-Inverter Island Scenarios Anderson Hoke, Austin Nelson, Brian Miller and Sudipta Chakraborty National Renewable Energy Laboratory Frances Bell and Michael McCarty SolarCity Technical Report NREL/TP-5D00-66732 July 2016 NREL is a national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy Operated by the Alliance for Sustainable Energy, LLC This report is

  7. Strain relief and Pd island shape evolution on the palladium and palladium hydride (100) surface

    SciTech Connect (OSTI)

    Kolesnikov, S. V.; Klavsyuk, A. L.; Saletsky, A. M. [Moscow State University (Russian Federation)

    2012-06-15

    The mesoscopic relaxation of small Pd islands on Pd(100) and PdH(100) surfaces is investigated on the atomic scale by performing molecular statics calculations. A strong strain and stress inhomogeneity in islands and topmost layers of the substrate is revealed. An unusual size dependence of the shape of islands is discovered.

  8. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  9. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  10. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  11. Electronic contribution to friction on GaAs

    SciTech Connect (OSTI)

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  12. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  13. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  14. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

    SciTech Connect (OSTI)

    Hennig, J. Dadgar, A.; Witte, H.; Bläsing, J.; Lesnik, A.; Strittmatter, A.; Krost, A.

    2015-07-15

    We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  15. Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy

    SciTech Connect (OSTI)

    Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E.; Sarigiannidou, E.

    2011-08-01

    We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

  16. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240350?nm emission

    SciTech Connect (OSTI)

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240350?nm range with internal quantum efficiencies around 30%.

  17. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  18. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  19. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

    SciTech Connect (OSTI)

    Tracy, Lisa A; Reno, John L.; Hargett, Terry W.

    2015-09-01

    Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

  20. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a ∼40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.